WorldWideScience

Sample records for low-pressure planar magnetron

  1. Geometrical aspects of a hollow-cathode planar magnetron

    International Nuclear Information System (INIS)

    Wang, Z.; Cohen, S.A.

    1999-01-01

    A hollow-cathode planar magnetron (HCPM), built by surrounding a planar sputtering-magnetron cathode with a hollow-cathode structure (HCS) [Z. Wang and S. A. Cohen, J. Vac. Sci. Technol. A 17, 77 (1999)], is operable at substantially lower pressures than its planar-magnetron counterpart. HCPM operational parameters depend on the inner diameter D and length L of its cylindrical HCS. Only when L is greater than L 0 , a critical length, is the HCPM operable in the new low-pressure regime. The critical length varies with HCS inner diameter D. Explanations of the lower operational pressure regime, critical length, and plasma shape are proposed and compared with a one-dimension diffusion model for energetic electron transport. At pressures above 1 mTorr, Bohm diffusion (temperature congruent primary electron energy), with an ambipolar constraint, can explain the ion - electron pair creation required to sustain the discharge. At the lowest pressure, ∼0.3 mTorr, collision-limited diffusion creates fewer ion - electron pairs than required for steady state and therefore cannot explain the experimental data. The critical length L 0 is consistent with the magnetization length of the primary electrons. copyright 1999 American Institute of Physics

  2. Stability of Brillouin flow in planar, conventional, and inverted magnetrons

    International Nuclear Information System (INIS)

    Simon, D. H.; Lau, Y. Y.; Greening, G.; Wong, P.; Gilgenbach, R. M.; Hoff, B. W.

    2015-01-01

    The Brillouin flow is the prevalent flow in crossed-field devices. We systematically study its stability in the conventional, planar, and inverted magnetron geometry. To investigate the intrinsic negative mass effect in Brillouin flow, we consider electrostatic modes in a nonrelativistic, smooth bore magnetron. We found that the Brillouin flow in the inverted magnetron is more unstable than that in a planar magnetron, which in turn is more unstable than that in the conventional magnetron. Thus, oscillations in the inverted magnetron may startup faster than the conventional magnetron. This result is consistent with simulations, and with the negative mass property in the inverted magnetron configuration. Inclusion of relativistic effects and electromagnetic effects does not qualitatively change these conclusions

  3. Very low pressure high power impulse triggered magnetron sputtering

    Science.gov (United States)

    Anders, Andre; Andersson, Joakim

    2013-10-29

    A method and apparatus are described for very low pressure high powered magnetron sputtering of a coating onto a substrate. By the method of this invention, both substrate and coating target material are placed into an evacuable chamber, and the chamber pumped to vacuum. Thereafter a series of high impulse voltage pulses are applied to the target. Nearly simultaneously with each pulse, in one embodiment, a small cathodic arc source of the same material as the target is pulsed, triggering a plasma plume proximate to the surface of the target to thereby initiate the magnetron sputtering process. In another embodiment the plasma plume is generated using a pulsed laser aimed to strike an ablation target material positioned near the magnetron target surface.

  4. Geometrical Aspects of a Hollow-cathode Magnetron (HCM)

    International Nuclear Information System (INIS)

    Cohen, Samuel A.; Wang, Zhehui

    1998-01-01

    A hollow-cathode magnetron (HCM), built by surrounding a planar sputtering-magnetron cathode with a hollow-cathode structure (HCS), is operable at substantially lower pressures than its planar-magnetron counterpart. We have studied the dependence of magnetron operational parameters on the inner diameter D and length L of a cylindrical HCS. Only when L is greater than L sub zero, a critical length, is the HCM operable in the new low-pressure regime. The critical length varies with HCS inner diameter D. Explanations of the lower operational pressure regime, critical length, and plasma shape are proposed and compared with a one-dimension diffusion model for energetic or primary electron transport. At pressures above 1 mTorr, an electron-impact ionization model with Bohm diffusion at a temperature equivalent to one-half the primary electron energy and with an ambipolar constraint can explain the ion-electron pair creation required to sustain the discharge. The critical length L sub zero is determined by the magnetization length of the primary electrons

  5. A Compact, Pi-Mode Extraction Scheme for the Axial B-Field Recirculating Planar Magnetron

    Science.gov (United States)

    2012-07-23

    Figure 4). Thus, in a planar magnetron, the minimum phase velocity, vph , to stay above cutoff in the rectangular waveguide is ℎ = ...as magnetrons, electrons must be accelerated such that they are in synchronism with the phase velocity, vph , of the electromagnetic wave for an

  6. Aluminum oxide films deposited in low pressure conditions by reactive pulsed dc magnetron sputtering

    CERN Document Server

    Seino, T

    2002-01-01

    The reactive pulsed dc sputtering technique is widely used for the deposition of oxide films. The operating pressure for sputtering is commonly above 0.13 Pa. In this study, however, aluminum oxide (alumina) films were deposited at operating pressures from 0.06 to 0.4 Pa using a sputtering system equipped with a scanning magnetron cathode and a pulsed dc power supply. The pulsed dc power was found to be useful not only to reduce arcing, but also to sustain the discharge at low pressure. The electrical breakdown field, intrinsic stress, O/Al ratio, refractive index, and surface roughness were investigated. Both a low intrinsic stress and an O/Al ratio around the stoichiometry were required to get the film having a high breakdown field. A low operating pressure of 0.1 Pa was found to provide the necessary stress and O/Al ratio targets. A 50-nm-thick alumina film having a maximum breakdown field of 7.4 MV/cm was obtained.

  7. CH₃NH₃PbI₃-based planar solar cells with magnetron-sputtered nickel oxide.

    Science.gov (United States)

    Cui, Jin; Meng, Fanping; Zhang, Hua; Cao, Kun; Yuan, Huailiang; Cheng, Yibing; Huang, Feng; Wang, Mingkui

    2014-12-24

    Herein we report an investigation of a CH3NH3PbI3 planar solar cell, showing significant power conversion efficiency (PCE) improvement from 4.88% to 6.13% by introducing a homogeneous and uniform NiO blocking interlayer fabricated with the reactive magnetron sputtering method. The sputtered NiO layer exhibits enhanced crystallization, high transmittance, and uniform surface morphology as well as a preferred in-plane orientation of the (200) plane. The PCE of the sputtered-NiO-based perovskite p-i-n planar solar cell can be further promoted to 9.83% when a homogeneous and dense perovskite layer is formed with solvent-engineering technology, showing an impressive open circuit voltage of 1.10 V. This is about 33% higher than that of devices using the conventional spray pyrolysis of NiO onto a transparent conducting glass. These results highlight the importance of a morphology- and crystallization-compatible interlayer toward a high-performance inverted perovskite planar solar cell.

  8. Nitrogen Atom Energy Distributions in a Hollow-cathode Planar Sputtering Magnetron

    International Nuclear Information System (INIS)

    Ruzic, D.N.; Goeckner, M.J.; Cohen, S.A.; Wang, Zhehui

    1999-01-01

    Energy distributions of N atoms in a hollow-cathode planar sputtering magnetron were obtained by use of optical emission spectroscopy. A characteristic line, N I 8216.3 , well-separated from molecular nitrogen emission bands, was identified. Jansson's nonlinear spectral deconvolution method, refined by minimization of χ w ampersand sup2; , was used to obtain the optimal deconvolved spectra. These showed nitrogen atom energies from 1 eV to beyond 500 eV. Based on comparisons with VFTRIM results, we propose that the energetic N atoms are generated from N 2 + ions after these ions are accelerated through the sheath and dissociatively reflect from the cathode

  9. On designing low pressure loss working spaces for a planar Stirling micromachine

    Science.gov (United States)

    Hachey, M.-A.; Léveillé, É.; Fréchette, L. G.; Formosa, F.

    2015-12-01

    In this paper, research was undertaken with the objective to design low pressure loss working spaces for a Stirling cycle micro heat engine operating from low temperature waste heat. This planar free-piston heat engine is anticipated to operate at the kHz level with mm3 displacement. Given the resonant nature of the free-piston configuration, the complexity of its working gas’ flow geometry and its projected high operating frequency, flow analysis is relatively complex. Design considerations were thus based on fast prototyping and experimentation. Results show that geometrical features, such as a sharp 90° corner between the regenerator and working spaces, are strong contributors to pressure losses. This research culminated into a promising revised working space configuration for engine start-up, as it considerably reduced total pressure losses, more than 80% at Re = 700, from the original design.

  10. Metal doped fluorocarbon polymer films prepared by plasma polymerization using an RF planar magnetron target

    International Nuclear Information System (INIS)

    Biederman, H.; Holland, L.

    1983-01-01

    Fluorocarbon films have been prepared by plasma polymerization of CF 4 using an RF planar magnetron with an aluminium target. More than one order of magnitude higher deposition rate has been achieved in comparison with an r.f. diode system operated under similar conditions of monomer pressure and flow rate and power input. A glow discharge in a CF 4 [25%]-argon[75%] mixture was used to incorporate aluminium from a target electrode into the polymer films. The foregoing mixture and another based on CF 4 [87%]-argon[13%] were used in the RF discharge with a copper target. Some experiments with a gold target and pure CF 4 as the inlet gas were also made. The film structure was examined by SEM and TEM and characteristic micrographs are presented here. The composition of the films was estimated from an EAS study. The sheet resistivity of the metal/polymer film complexes was determined. (orig.)

  11. Metal doped fluorocarbon polymer films prepared by plasma polymerization using an RF planar magnetron target

    Energy Technology Data Exchange (ETDEWEB)

    Biederman, H.; Holland, L. (Sussex Univ., Brighton (UK). Lab. for Plasma Materials Processing)

    1983-07-01

    Fluorocarbon films have been prepared by plasma polymerization of CF/sub 4/ using an RF planar magnetron with an aluminium target. More than one order of magnitude higher deposition rate has been achieved in comparison with an R.F. diode system operated under similar conditions of monomer pressure and flow rate and power input. A glow discharge in a CF/sub 4/(25%)-argon(75%) mixture was used to incorporate aluminium from a target electrode into the polymer films. The foregoing mixture and another based on CF/sub 4/(87%)-argon(13%) were used in the RF discharge with a copper target. Some experiments with a gold target and pure CF/sub 4/ as the inlet gas were also made. The film structure was examined by SEM and TEM and characteristic micrographs are presented here. The composition of the films was estimated from an EAS study. The sheet resistivity of the metal/polymer film complexes was determined.

  12. Geometric considerations in magnetron sputtering

    International Nuclear Information System (INIS)

    Thornton, J.A.

    1982-01-01

    The recent development of high performance magnetron type discharge sources has greatly enhaced the range of coating applications where sputtering is a viable deposition process. Magnetron sources can provide high current densities and sputtering rates, even at low pressures. They have much reduced substrate heating rates and can be scaled to large sizes. Magnetron sputter coating apparatuses can have a variety of geometric and plasma configurations. The target geometry affects the emission directions of both the sputtered atoms and the energetic ions which are neutralized and reflected at the cathode. This fact, coupled with the long mean free particle paths which are prevalent at low pressures, can make the coating properties very dependent on the apparatus geometry. This paper reviews the physics of magnetron operation and discusses the influences of apparatus geometry on the use of magnetrons for rf sputtering and reactive sputtering, as well as on the microstructure and internal stresses in sputtered metallic coatings. (author) [pt

  13. Arc-discharge and magnetron sputtering combined equipment for nanocomposite coating deposition

    International Nuclear Information System (INIS)

    Koval, N.N.; Borisov, D.P.; Savostikov, V.M.

    2005-01-01

    It is known that characteristics of nanocomposite coatings produced by reactive magnetron sputtering undergo an essential influence on the following parameters such as original component composition of targets being sputtered, as well as abundance ratio of such components in the coatings deposited, relative content of inert and reactionary gases in a gas mixture used and a value of operating pressure in a chamber, substrate temperature, and a value of substrate bias potential, determining energy of ionized atoms, ionized atoms flow density, i.e. ion current density on a substrate. The multifactor character of production process of nanocomposite coatings with certain physical and mechanical properties demands a purposeful and complex control on all above-mentioned parameters. To solve such a problem, an arc-discharge and magnetron sputtering combined equipment including a vacuum chamber of approximately ∼ 0.5 m 3 with a built-in low-pressure plasma generator made on the basis of non-self-sustained discharge with a thermal cathode and a planar magnetron combined with two sputtered targets has been created. Construction of such a complex set-up provides both an autonomous mode of operation and simultaneous operation of an arc plasma generator and magnetron sputtering system. Magnetron sputtering of either one or two targets simultaneously is provided as well. An arc plasma generator enables ions current density control on a substrate in a wide range due to discharge current varying from 1 to 100 A. Energy of ions is also being controlled in a wide range by a negative bias potential from 0 to 1000 V applied to a substrate. The wide control range of gas plasma density of a arc discharge of approximately 10 9 -10 11 cm -3 and high uniformity of its distribution over the total volume of an operating chamber (about 15% error with regard to the mean value) provides a purposeful and simultaneous control either of magnetron discharge characteristics (operating pressure of

  14. Axisymmetrical particle-in-cell/Monte Carlo simulation of narrow gap planar magnetron plasmas. I. Direct current-driven discharge

    International Nuclear Information System (INIS)

    Kondo, Shuji; Nanbu, Kenichi

    2001-01-01

    An axisymmetrical particle-in-cell/Monte Carlo simulation is performed for modeling direct current-driven planar magnetron discharge. The axisymmetrical structure of plasma parameters such as plasma density, electric field, and electron and ion energy is examined in detail. The effects of applied voltage and magnetic field strength on the discharge are also clarified. The model apparatus has a narrow target-anode gap of 20 mm to make the computational time manageable. This resulted in the current densities which are very low compared to actual experimental results for a wider target-anode gap. The current-voltage characteristics show a negative slope in contrast with many experimental results. However, this is understandable from Gu and Lieberman's similarity equation. The negative slope appears to be due to the narrow gap

  15. Pulsed dc self-sustained magnetron sputtering

    International Nuclear Information System (INIS)

    Wiatrowski, A.; Posadowski, W. M.; Radzimski, Z. J.

    2008-01-01

    The magnetron sputtering has become one of the commonly used techniques for industrial deposition of thin films and coatings due to its simplicity and reliability. At standard magnetron sputtering conditions (argon pressure of ∼0.5 Pa) inert gas particles (necessary to sustain discharge) are often entrapped in the deposited films. Inert gas contamination can be eliminated during the self-sustained magnetron sputtering (SSS) process, where the presence of the inert gas is not a necessary requirement. Moreover the SSS process that is possible due to the high degree of ionization of the sputtered material also gives a unique condition during the transport of sputtered particles to the substrate. So far it has been shown that the self-sustained mode of magnetron operation can be obtained using dc powering (dc-SSS) only. The main disadvantage of the dc-SSS process is its instability related to random arc formation. In such case the discharge has to be temporarily extinguished to prevent damaging both the magnetron source and power supply. The authors postulate that pulsed powering could protect the SSS process against arcs, similarly to reactive pulsed magnetron deposition processes of insulating thin films. To put this concept into practice, (i) the high enough plasma density has to be achieved and (ii) the type of pulsed powering has to be chosen taking plasma dynamics into account. In this article results of pulsed dc self-sustained magnetron sputtering (pulsed dc-SSS) are presented. The planar magnetron equipped with a 50 mm diameter and 6 mm thick copper target was used during the experiments. The maximum target power was about 11 kW, which corresponded to the target power density of ∼560 W/cm 2 . The magnetron operation was investigated as a function of pulse frequency (20-100 kHz) and pulse duty factor (50%-90%). The discharge (argon) extinction pressure level was determined for these conditions. The plasma emission spectra (400-410 nm range) and deposition

  16. Operational limit of a planar DC magnetron cluster source due to target erosion

    International Nuclear Information System (INIS)

    Rai, A.; Mutzke, A.; Bandelow, G.; Schneider, R.; Ganeva, M.; Pipa, A.V.; Hippler, R.

    2013-01-01

    The binary collision-based two dimensional SDTrimSP-2D model has been used to simulate the erosion process of a Cu target and its influence on the operational limit of a planar DC magnetron nanocluster source. The density of free metal atoms in the aggregation region influences the cluster formation and cluster intensity during the target lifetime. The density of the free metal atoms in the aggregation region can only be predicted by taking into account (i) the angular distribution of the sputtered flux from the primary target source and (ii) relative downwards shift of the primary source of sputtered atoms during the erosion process. It is shown that the flux of the sputtered atoms smoothly decreases with the target erosion

  17. RHEED oscillations in spinel ferrite epitaxial films grown by conventional planar magnetron sputtering

    Science.gov (United States)

    Ojima, T.; Tainosho, T.; Sharmin, S.; Yanagihara, H.

    2018-04-01

    Real-time in situ reflection high energy electron diffraction (RHEED) observations of Fe3O4, γ-Fe2O3, and (Co,Fe)3O4 films on MgO(001) substrates grown by a conventional planar magnetron sputtering was studied. The change in periodical intensity of the specular reflection spot in the RHEED images of three different spinel ferrite compounds grown by two different sputtering systems was examined. The oscillation period was found to correspond to the 1/4 unit cell of each spinel ferrite, similar to that observed in molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) experiments. This suggests that the layer-by-layer growth of spinel ferrite (001) films is general in most physical vapor deposition (PVD) processes. The surfaces of the films were as flat as the surface of the substrate, consistent with the observed layer-by-layer growth process. The observed RHEED oscillation indicates that even a conventional sputtering method can be used to control film thickness during atomic layer depositions.

  18. RHEED oscillations in spinel ferrite epitaxial films grown by conventional planar magnetron sputtering

    Directory of Open Access Journals (Sweden)

    T. Ojima

    2018-04-01

    Full Text Available Real-time in situ reflection high energy electron diffraction (RHEED observations of Fe3O4, γ-Fe2O3, and (Co,Fe3O4 films on MgO(001 substrates grown by a conventional planar magnetron sputtering was studied. The change in periodical intensity of the specular reflection spot in the RHEED images of three different spinel ferrite compounds grown by two different sputtering systems was examined. The oscillation period was found to correspond to the 1/4 unit cell of each spinel ferrite, similar to that observed in molecular beam epitaxy (MBE and pulsed laser deposition (PLD experiments. This suggests that the layer-by-layer growth of spinel ferrite (001 films is general in most physical vapor deposition (PVD processes. The surfaces of the films were as flat as the surface of the substrate, consistent with the observed layer-by-layer growth process. The observed RHEED oscillation indicates that even a conventional sputtering method can be used to control film thickness during atomic layer depositions.

  19. Electrical properties of indium-tin oxide films deposited on nonheated substrates using a planar-magnetron sputtering system and a facing-targets sputtering system

    International Nuclear Information System (INIS)

    Iwase, Hideo; Hoshi, Youichi; Kameyama, Makoto

    2006-01-01

    Distribution of the electrical properties of indium-tin oxide (ITO) film prepared by both a planar-magnetron sputtering system (PMSS) and a facing-targets sputtering system (FTSS) at room temperature were investigated. It was found that the outstanding non-uniformities of the electrical properties in noncrystalline ITO films are mainly due to the variation of the oxygen stoichiometry dependent on film positions on substrate surfaces. Furthermore, ITO film with uniform distribution of electrical properties was obtainable using FTSS

  20. Magnetron sputtered zinc oxide nanorods as thickness-insensitive cathode interlayer for perovskite planar-heterojunction solar cells.

    Science.gov (United States)

    Liang, Lusheng; Huang, Zhifeng; Cai, Longhua; Chen, Weizhong; Wang, Baozeng; Chen, Kaiwu; Bai, Hua; Tian, Qingyong; Fan, Bin

    2014-12-10

    Suitable electrode interfacial layers are essential to the high performance of perovskite planar heterojunction solar cells. In this letter, we report magnetron sputtered zinc oxide (ZnO) film as the cathode interlayer for methylammonium lead iodide (CH3NH3PbI3) perovskite solar cell. Scanning electron microscopy and X-ray diffraction analysis demonstrate that the sputtered ZnO films consist of c-axis aligned nanorods. The solar cells based on this ZnO cathode interlayer showed high short circuit current and power conversion efficiency. Besides, the performance of the device is insensitive to the thickness of ZnO cathode interlayer. Considering the high reliability and maturity of sputtering technique both in lab and industry, we believe that the sputtered ZnO films are promising cathode interlayers for perovskite solar cells, especially in large-scale production.

  1. Low-Cost Planar PTF Sensors for the Identity Verification of Smartcard Holders

    NARCIS (Netherlands)

    Henderson, N.J.; Papakostas, T.V.; White, N.M.; Hartel, Pieter H.

    The properties of mechanical flexibility, low-cost and planar geometry make polymer thick film (PTF) sensors attractive for embedded smartcard biometrics. PTF piezoelectric and piezoresistive pressure sensors are investigated for their potential to capture spatial human characteristics. However, it

  2. Time-resolved investigation of an asymmetric bipolar pulsed magnetron deposition discharge: Influence of pressure

    NARCIS (Netherlands)

    Dunger, Th.; Welzel, Th.; Welzel, S.; Richter, F.

    2005-01-01

    A bipolar pulsed magnetron deposition discharge has been studied with pulse frequencies of 100 and 150 kHz, respectively. The discharge was operated in an argon/oxygen mixture at different total pressures with a circular magnesium target as cathode. Time-resolved Langmuir double probe measurements

  3. Instantaneous planar pressure determination from PIV in turbulent flow

    NARCIS (Netherlands)

    De Kat, R.; Van Oudheusden, B.W.

    2011-01-01

    This paper deals with the determination of instantaneous planar pressure fields from velocity data obtained by particle image velocimetry (PIV) in turbulent flow. The operating principles of pressure determination using a Eulerian or a Lagrangian approach are described together with theoretical

  4. Highly ionized physical vapor deposition plasma source working at very low pressure

    Science.gov (United States)

    Stranak, V.; Herrendorf, A.-P.; Drache, S.; Cada, M.; Hubicka, Z.; Tichy, M.; Hippler, R.

    2012-04-01

    Highly ionized discharge for physical vapor deposition at very low pressure is presented in the paper. The discharge is generated by electron cyclotron wave resonance (ECWR) which assists with ignition of high power impulse magnetron sputtering (HiPIMS) discharge. The magnetron gun (with Ti target) was built into the single-turn coil RF electrode of the ECWR facility. ECWR assistance provides pre-ionization effect which allows significant reduction of pressure during HiPIMS operation down to p = 0.05 Pa; this is nearly more than an order of magnitude lower than at typical pressure ranges of HiPIMS discharges. We can confirm that nearly all sputtered particles are ionized (only Ti+ and Ti++ peaks are observed in the mass scan spectra). This corresponds well with high plasma density ne ˜ 1018 m-3, measured during the HiPIMS pulse.

  5. Highly ionized physical vapor deposition plasma source working at very low pressure

    International Nuclear Information System (INIS)

    Stranak, V.; Herrendorf, A.-P.; Drache, S.; Hippler, R.; Cada, M.; Hubicka, Z.; Tichy, M.

    2012-01-01

    Highly ionized discharge for physical vapor deposition at very low pressure is presented in the paper. The discharge is generated by electron cyclotron wave resonance (ECWR) which assists with ignition of high power impulse magnetron sputtering (HiPIMS) discharge. The magnetron gun (with Ti target) was built into the single-turn coil RF electrode of the ECWR facility. ECWR assistance provides pre-ionization effect which allows significant reduction of pressure during HiPIMS operation down to p = 0.05 Pa; this is nearly more than an order of magnitude lower than at typical pressure ranges of HiPIMS discharges. We can confirm that nearly all sputtered particles are ionized (only Ti + and Ti ++ peaks are observed in the mass scan spectra). This corresponds well with high plasma density n e ∼ 10 18 m -3 , measured during the HiPIMS pulse.

  6. Some properties of the gas magnetron; neke osobine gasnog magnetrona

    Energy Technology Data Exchange (ETDEWEB)

    Miljevic, V [Boris Kidric Institute of nuclear sciences, Vinca, Belgrade (Yugoslavia)

    1979-07-01

    The cylindrical magnetron diode with directly heated cathode, filled with argon at low pressure, has been studied. In the case of high magnetic fields and low gas pressure the motion of electrons is reduced to the rotation around the cathode with superimposed allow radial drift. It is found that the plasma formation time in in the msec region. The critical magnetic field in the vacuum diode (B{sub c}), and its value increases with the increase of the anode voltage and working pressure. (author)

  7. Structure of AlN films deposited by magnetron sputtering method

    Directory of Open Access Journals (Sweden)

    Nowakowska-Langier K.

    2015-09-01

    Full Text Available AlN films on a Si substrate were synthesized by magnetron sputtering method. A dual magnetron system operating in AC mode was used in the experiment. Processes of synthesis were carried out in the atmosphere of a mixture of Ar/N2. Morphology and phase structure of the AlN films were investigated at different pressures. Structural characterizations were performed by means of SEM and X-ray diffraction methods. Our results show that the use of magnetron sputtering method in a dual magnetron sputtering system is an effective way to produce AlN layers which are characterized by a good adhesion to the silicon substrate. The morphology of the films is strongly dependent on the Ar/N2 gas mixture pressure. An increase of the mixture pressure is accompanied by a columnar growth of the layers. The films obtained at the pressure below 1 Pa are characterized by finer and compacter structure. The AlN films are characterized by a polycrystalline hexagonal (wurtzite structure in which the crystallographic orientation depends on the gas mixture pressure.

  8. Effect of interelectrode distance on dc magnetron current-pressure characteristics

    Science.gov (United States)

    Mankelevich, Yu A.; Pal, A. F.; Ryabinkin, A. N.; Serov, A. O.

    2018-01-01

    The current-pressure (I-P) non-monotonic characteristic in the magnetron discharge dc in argon at different interelectrode distances was investigated. The ion spatial distribution was obtained with optical emission spectroscopy and the characteristic dimensions of the discharge structure in near cathode region were determined. It is shown that decreasing the distance between electrodes does not affect the shape and position of the nonmonotonic part of I-P characteristic until this distance become comparable with the dimensions of the ionization region near cathode. The existence of non-monotonic part of I-P characteristic is determined by the processes in the near cathode region and is probably unrelated with the cold electron transfer in the rest of the plasma.

  9. Nanocomposite-Based Microstructured Piezoresistive Pressure Sensors for Low-Pressure Measurement Range

    Directory of Open Access Journals (Sweden)

    Vasileios Mitrakos

    2018-01-01

    Full Text Available Piezoresistive pressure sensors capable of detecting ranges of low compressive stresses have been successfully fabricated and characterised. The 5.5 × 5 × 1.6 mm3 sensors consist of a planar aluminium top electrode and a microstructured bottom electrode containing a two-by-two array of truncated pyramids with a piezoresistive composite layer sandwiched in-between. The responses of two different piezocomposite materials, a Multiwalled Carbon Nanotube (MWCNT-elastomer composite and a Quantum Tunneling Composite (QTC, have been characterised as a function of applied pressure and effective contact area. The MWCNT piezoresistive composite-based sensor was able to detect pressures as low as 200 kPa. The QTC-based sensor was capable of detecting pressures as low as 50 kPa depending on the contact area of the bottom electrode. Such sensors could find useful applications requiring the detection of small compressive loads such as those encountered in haptic sensing or robotics.

  10. Influence of plasma-generated negative oxygen ion impingement on magnetron sputtered amorphous SiO2 thin films during growth at low temperatures

    International Nuclear Information System (INIS)

    Macias-Montero, M.; Garcia-Garcia, F. J.; Alvarez, R.; Gil-Rostra, J.; Gonzalez, J. C.; Gonzalez-Elipe, A. R.; Palmero, A.; Cotrino, J.

    2012-01-01

    Growth of amorphous SiO 2 thin films deposited by reactive magnetron sputtering at low temperatures has been studied under different oxygen partial pressure conditions. Film microstructures varied from coalescent vertical column-like to homogeneous compact microstructures, possessing all similar refractive indexes. A discussion on the process responsible for the different microstructures is carried out focusing on the influence of (i) the surface shadowing mechanism, (ii) the positive ion impingement on the film, and (iii) the negative ion impingement. We conclude that only the trend followed by the latter and, in particular, the impingement of O - ions with kinetic energies between 20 and 200 eV, agrees with the resulting microstructural changes. Overall, it is also demonstrated that there are two main microstructuring regimes in the growth of amorphous SiO 2 thin films by magnetron sputtering at low temperatures, controlled by the amount of O 2 in the deposition reactor, which stem from the competition between surface shadowing and ion-induced adatom surface mobility.

  11. Effect of deposition parameters on properties of ITO films prepared by reactive middle frequency pulsed dual magnetron sputtering

    International Nuclear Information System (INIS)

    Rogozin, A.I.; Vinnichenko, M.V.; Kolitsch, A.; Moeller, W.

    2004-01-01

    ITO layers with low resistivity and high visible transmittance were produced by means of middle frequency reactive dual magnetron sputtering. The influence of base pressure, Ar/O 2 ratio and magnetron pulse duration on the film composition, structure, electrical, and optical properties has been investigated. The deposition rate is proportional to the magnetron operation power at changing pulse duration and constant Ar and O 2 flows. At enhanced O 2 flows an onset of the magnetron target oxidation is discussed as a reason for the decrease of the deposition rate. The presence of water vapor in the residual gas is determined to be a reason for deterioration of resistivity and optical transmittance observed for ITO films produced at a base pressures higher than 5·10 -4 Pa. It is demonstrated that spectroscopic ellipsometry can be used as a noncontact tool to monitor the resistivity of ITO films

  12. Composite Ag/C:H:N films prepared by planar magnetron deposition

    Energy Technology Data Exchange (ETDEWEB)

    Hlidek, P. [Charles University, Faculty of Mathematics and Physics, Praha (Czech Republic)], E-mail: hlidek@karlov.mff.cuni.cz; Hanus, J.; Biederman, H.; Slavinska, D.; Pesicka, J. [Charles University, Faculty of Mathematics and Physics, Praha (Czech Republic)

    2008-05-30

    Composite Ag/C:H:N films were deposited by means of an unbalanced magnetron operated in a gas mixture of nitrogen and n-hexane. Composition of the films was controlled by electric power delivered to the magnetron and by ratio of nitrogen and n-hexane in the working gas mixture. The films were characterized using transmission electron microscopy, by the absorption spectra in visible and near infrared regions and by Fourier transform infrared spectroscopy. Immediately after film deposition and without breaking vacuum (in situ) corresponding vibration infrared spectra were scanned and their evolution during ageing of the films was monitored. Wettability as determined from water contact angle was improved with raising nitrogen contents, i.e. with increasing the electric power and the ratio of nitrogen/n-hexane in the working gas mixture. The increased wettability is likely caused by presence of NH{sub x} groups in Ag/C:H:N films. The incorporation of nitrogen effectively prevents the formation of carboxylate groups on the silver inclusions surfaces during the aging in the open air. In addition, the oxidation mechanism of the polymer matrix is modified.

  13. Low temperature magnetron sputter deposition of polycrystalline silicon thin films using high flux ion bombardment

    International Nuclear Information System (INIS)

    Gerbi, Jennifer E.; Abelson, John R.

    2007-01-01

    We demonstrate that the microstructure of polycrystalline silicon thin films depends strongly on the flux of low energy ions that bombard the growth surface during magnetron sputter deposition. The deposition system is equipped with external electromagnetic coils which, through the unbalanced magnetron effect, provide direct control of the ion flux independent of the ion energy. We report the influence of low energy ( + on the low temperature ( + ions to silicon neutrals (J + /J 0 ) during growth by an order of magnitude (from 3 to 30) enables the direct nucleation of polycrystalline Si on glass and SiO 2 coated Si at temperatures below 400 degree sign C. We discuss possible mechanisms for this enhancement of crystalline microstructure, including the roles of enhanced adatom mobility and the formation of shallow, mobile defects

  14. Development of low temperature RF magnetron sputtered ITO films on flexible substrate

    Energy Technology Data Exchange (ETDEWEB)

    Muneshwar, T.P.; Varma, V.; Meshram, N; Soni, S.; Dusane, R.O. [Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Powai, Mumbai 400076 (India)

    2010-09-15

    Indium tin oxide (ITO) is one of the important materials used as transparent conducting oxide (TCO) layer in thin film solar cells, digital displays and other similar applications. For applications involving flexible polymeric substrates, it is important that deposition of ITO is carried out at near room temperature. This requirement puts constraint on stoichiometry leading to undesired electrical and optical properties. Effect of oxygen partial pressure on ITO films deposited on flexible Kapton {sup registered} by the RF magnetron sputtering is reported in this paper. (author)

  15. Highly ionized physical vapor deposition plasma source working at very low pressure

    Czech Academy of Sciences Publication Activity Database

    Straňák, V.; Herrendorf, A.-P.; Drache, S.; Čada, Martin; Hubička, Zdeněk; Tichý, M.; Hippler, R.

    2012-01-01

    Roč. 100, č. 14 (2012), "141604-1"-"141604-3" ISSN 0003-6951 R&D Projects: GA TA ČR TA01010517; GA ČR(CZ) GAP205/11/0386; GA ČR GAP108/12/1941 Institutional research plan: CEZ:AV0Z10100522 Keywords : magnetron * ECWR * low-pressure * sputtering * plasma diagnostics Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 3.794, year: 2012 http://dx.doi.org/10.1063/1.3699229

  16. Atmospheric pressure surface sampling/ionization techniques for direct coupling of planar separations with mass spectrometry.

    Science.gov (United States)

    Pasilis, Sofie P; Van Berkel, Gary J

    2010-06-18

    Planar separations, which include thin layer chromatography and gel electrophoresis, are in widespread use as important and powerful tools for conducting separations of complex mixtures. To increase the utility of planar separations, new methods are needed that allow in situ characterization of the individual components of the separated mixtures. A large number of atmospheric pressure surface sampling and ionization techniques for use with mass spectrometry have emerged in the past several years, and several have been investigated as a means for mass spectrometric read-out of planar separations. In this article, we review the atmospheric pressure surface sampling and ionization techniques that have been used for the read-out of planar separation media. For each technique, we briefly explain the operational basics and discuss the analyte type for which it is appropriate and some specific applications from the literature. Copyright (c) 2010 Elsevier B.V. All rights reserved.

  17. Simulation of the electric potential and plasma generation coupling in magnetron sputtering discharges

    Science.gov (United States)

    Trieschmann, Jan; Krueger, Dennis; Schmidt, Frederik; Brinkmann, Ralf Peter; Mussenbrock, Thomas

    2016-09-01

    Magnetron sputtering typically operated at low pressures below 1 Pa is a widely applied deposition technique. For both, high power impulse magnetron sputtering (HiPIMS) as well as direct current magnetron sputtering (dcMS) the phenomenon of rotating ionization zones (also referred to as spokes) has been observed. A distinct spatial profile of the electric potential has been associated with the latter, giving rise to low, mid, and high energy groups of ions observed at the substrate. The adherent question of which mechanism drives this process is still not fully understood. This query is approached using Monte Carlo simulations of the heavy particle (i.e., ions and neutrals) transport consistently coupled to a pre-specified electron density profile via the intrinsic electric field. The coupling between the plasma generation and the electric potential, which establishes correspondingly, is investigated. While the system is observed to strive towards quasi-neutrality, distinct mechanisms governing the shape of the electric potential profile are identified. This work is supported by the German Research Foundation (DFG) in the frame of the transregional collaborative research centre TRR 87.

  18. Increase in the accuracy of approximating the profile of the erosion zone in planar magnetrons

    Science.gov (United States)

    Rogov, A. V.; Kapustin, Yu. V.

    2017-09-01

    It has been shown that the use of the survival function of the Weibull distribution shifted along the ordinate axis allows one to increase the accuracy of the approximation of the normalized profile of an erosion zone in the area from the axis to the maximum sputtering region compared with the previously suggested distribution function of the extremum values. The survival function of the Weibull distribution is used in the area from the maximum to the outer boundary of an erosion zone. The major advantage of using the new approximation is observed for magnetrons with a large central nonsputtered spot and for magnetrons with substantial sputtering in the paraxial zone.

  19. Study of working pressure on the optoelectrical properties of Al–Y codoped ZnO thin-film deposited using DC magnetron sputtering for solar cell applications

    International Nuclear Information System (INIS)

    Hsu, Feng-Hao; Wang, Na-Fu; Tsai, Yu-Zen; Chuang, Ming-Chieh; Cheng, Yu-Song; Houng, Mau-Phon

    2013-01-01

    Low cost transparent conductive Al–Y codoped ZnO (AZOY) thin-films were prepared on a glass substrate using a DC magnetron sputtering technique with various working pressures in the range of 5–13 mTorr. The relationship among the structural, electrical, and optical properties of sputtered AZOY films was studied as a function of working pressure. The XRD measurements show that the crystallinity of the films degraded as the working gas pressure increased. The AZOY thin-film deposited at a working pressure of 5 mTorr exhibited the lowest electrical resistivity of 4.3 × 10 −4 Ω cm, carrier mobility of 30 cm 2 /V s, highest carrier concentration of 4.9 × 10 20 cm −3 , and high transmittance in the visible region (400–800 nm) of approximately 90%. Compared with Al doped ZnO (AZO) thin-films deposited using DC or RF magnetron sputtering methods, a high carrier mobility was observed in our AZOY thin-films. This result can be used to effectively decrease the absorption of near infrared-rays in solar cell applications. The mechanisms are attributed to the larger transition energy between Ar atoms and sputtering particles and the size compensation of the dopants. Finally, the optimal quality AZOY thin-film was used as an emitter layer (or window layer) to form AZOY/n-Si heterojunction solar cells, which exhibited a stable conversion efficiency (η) of 9.4% under an AM1.5 illumination condition.

  20. Low-Cost Fiber Optic Pressure Sensor

    Science.gov (United States)

    Sheem, Sang K.

    2003-07-22

    The size and cost of fabricating fiber optic pressure sensors is reduced by fabricating the membrane of the sensor in a non-planar shape. The design of the sensors may be made in such a way that the non-planar membrane becomes a part of an air-tight cavity, so as to make the membrane resilient due to the air-cushion effect of the air-tight cavity. Such non-planar membranes are easier to make and attach.

  1. Phase and Frequency Locked Magnetrons for SRF Sources

    International Nuclear Information System (INIS)

    Neubauer, M.; Johnson, R.P.; Popovic, M.; Moretti, A.

    2009-01-01

    Magnetrons are low-cost highly-efficient microwave sources, but they have several limitations, primarily centered about the phase and frequency stability of their output. When the stability requirements are low, such as for medical accelerators or kitchen ovens, magnetrons are the very efficient power source of choice. But for high energy accelerators, because of the need for frequency and phase stability - proton accelerators need 1-2 degrees source phase stability, and electron accelerators need .1-.2 degrees of phase stability - they have rarely been used. We describe a novel variable frequency cavity technique which will be utilized to phase and frequency lock magnetrons.

  2. Observation of Shapiro-steps in AFM-plought micron-size YBCO planar construction

    CSIR Research Space (South Africa)

    Elkaseh, AAO

    2009-01-01

    Full Text Available Using an Atomic Force Microscope (AFM), micron size planar constriction type junctions was successfully ploughed on YBa2Cu3O7-x thin films. The 100 nanometer (nm) thin films are deposited on MgO substrates by an Inverted Cylindrical Magnetron (ICM...

  3. Comparison of evaluation method for planar flaw in pressure tube

    International Nuclear Information System (INIS)

    Choi, Sung Nam; Kim, Hyung Nam; Yoo, Hyun Joo; Hwang, Won Gul

    2009-01-01

    CSA N285.4-94 requires the periodic inservice inspection and surveillance of pressure tubes in operating CANDU nuclear power reactors. If the inspection results reveal a flaw exceeding the acceptance criteria of the Code, the flaw must be evaluated to determine if the pressure is acceptable for continued service. Currently, the flaw evaluation methodology and acceptance criteria specified in CSA N285.8-05, 'Technical requirements for in-service evaluation of zirconium alloy pressure tubes in CANDU reactors'. The Code is applicable to zirconium alloy pressure tubes. The evaluation methodology for a crack-like flaw is similar to that of FFSG(Fitness For Service Guideline for Zirconium alloy pressure in operation CANDU) used now. The object of this paper is to address the fracture initiation and plastic collapse evaluation for the planar flaw as it applies to the pressure tube on Wolsong NPP.

  4. Effect of Oxygen Partial Pressure on the Electrical and Optical Properties of DC Magnetron Sputtered Amorphous TiO2 Films

    OpenAIRE

    Chandra Sekhar, M.; Kondaiah, P.; Radha Krishna, B.; Uthanna, S.

    2013-01-01

    Titanium dioxide (TiO2) thin films were deposited on p-Si (100) and Corning glass substrates held at room temperature by DC magnetron sputtering at different oxygen partial pressures in the range 9 × 10−3–9 × 10−2 Pa. The influence of oxygen partial pressure on the structural, electrical, and optical properties of the deposited films was systematically studied. XPS studies confirmed that the film formed at an oxygen partial pressure of 6×10−2 Pa was nearly stoichiometric. TiO2 films formed at...

  5. Synthesis and characterization of DC magnetron sputtered ZnO thin films under high working pressures

    International Nuclear Information System (INIS)

    Hezam, M.; Tabet, N.; Mekki, A.

    2010-01-01

    ZnO thin films were deposited on glass substrates using direct current (dc) magnetron sputtering under high working pressures. A pure zinc target was used, and sputtering was carried out in an oxygen atmosphere. The working pressure was varied between 50 and 800 mTorr. XRD characterization showed that for a window of working pressures between 300 and 500 mTorr, the deposited films were polycrystalline, with strong preferential orientation of grains along the c-axis. The film deposited at 400 mTorr had the highest (002) peak with the largest estimated grain size. Outside this window, the crystallinity and c-orientation of grains are lost. The microstructure of the films was investigated by Atomic Force microscopy (AFM). Optical transparency of the films was about 85%. The films produced were highly resistive, which might provide new alternatives for the synthesis of ZnO thin films aimed for SAW devices.

  6. Study of working pressure on the optoelectrical properties of Al–Y codoped ZnO thin-film deposited using DC magnetron sputtering for solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Hsu, Feng-Hao [Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, No. 1, Dasyue Road, East District, Tainan City 701, Taiwan (China); Wang, Na-Fu; Tsai, Yu-Zen; Chuang, Ming-Chieh; Cheng, Yu-Song [Department of Electronic Engineering, Cheng Shiu University, 840 Chengcing Road, Niaosong District, Kaohsiung City 833, Taiwan (China); Houng, Mau-Phon, E-mail: mphoung@eembox.ncku.edu.tw [Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, No. 1, Dasyue Road, East District, Tainan City 701, Taiwan (China)

    2013-09-01

    Low cost transparent conductive Al–Y codoped ZnO (AZOY) thin-films were prepared on a glass substrate using a DC magnetron sputtering technique with various working pressures in the range of 5–13 mTorr. The relationship among the structural, electrical, and optical properties of sputtered AZOY films was studied as a function of working pressure. The XRD measurements show that the crystallinity of the films degraded as the working gas pressure increased. The AZOY thin-film deposited at a working pressure of 5 mTorr exhibited the lowest electrical resistivity of 4.3 × 10{sup −4} Ω cm, carrier mobility of 30 cm{sup 2}/V s, highest carrier concentration of 4.9 × 10{sup 20} cm{sup −3}, and high transmittance in the visible region (400–800 nm) of approximately 90%. Compared with Al doped ZnO (AZO) thin-films deposited using DC or RF magnetron sputtering methods, a high carrier mobility was observed in our AZOY thin-films. This result can be used to effectively decrease the absorption of near infrared-rays in solar cell applications. The mechanisms are attributed to the larger transition energy between Ar atoms and sputtering particles and the size compensation of the dopants. Finally, the optimal quality AZOY thin-film was used as an emitter layer (or window layer) to form AZOY/n-Si heterojunction solar cells, which exhibited a stable conversion efficiency (η) of 9.4% under an AM1.5 illumination condition.

  7. Reactive magnetron sputtering model at making Ti-TiOx coatings

    International Nuclear Information System (INIS)

    Luchkin, A G; Kashapov, N F

    2014-01-01

    Mathematical model of reactive magnetron sputtering for plant VU 700-D is described. Approximating curves for experimental current-voltage characteristic for two gas input schemas are shown. Choice of gas input schema influences on model parameters (mainly on pumping speed). Reactive magnetron sputtering model allows develop technology of Ti - TiO x coatings deposition without changing atmosphere and pressure in vacuum chamber

  8. Study of the cathode region of mercury-free He-Xe low-pressure gas-discharge lamps with planar mesh electrode; Untersuchung der Kathodenregion von quecksilberfreien He-Xe Niederdruckgasentladungslampen mit planarer Geflechtelektrode

    Energy Technology Data Exchange (ETDEWEB)

    Winter, Joern

    2009-12-04

    In the present work the cathode region of a mercury-free helium-xenon low pressure discharge in spot mode was experimentally investigated. Due to the emission of electrons, the production of ions and metastable atoms as well as lifetime limiting processes the cathode region is of particular interest. To implement a discharge in spot mode a novel planar mesh electrode was developed and used as cathode. Applying the space resolved laser-atom-absorption-spectroscopy method (LAAS) the absolute particle densities of the two lowest excited xenon atoms and the gas temperature in the cathode region were determined, whereas the strong spot plasma inhomogeneity was considered. Both the excited xenon particle density and the gas temperature strongly decrease in radial and axial direction. Particularly the gas temperature has a value of about 650 K in a 1mm cathode distance and does clearly exceed room temperature. Furthermore the spectrum of the hot spot on the cathode surface was detected by means of optical emission spectroscopy. From this spectrum the temperature distribution of the cathode spot was obtained by fitting Planck's law. The temperature distribution shows a distinct maximum, which in dependence of the discharge current reaches values of 1414 K at 40 mA and 1524 K at 80 mA. From that maximum a steep direction-independent temperature decrease was obtained. A technological important aspect concerning the lifetime of a xenon based mercury-free discharge lamp is the problematic effect of the xenon gas consumption. In this work it is shown that in contrary to an industrial made standard cup electrode, which is broadly used in light advertising lamps, the gas consumption is negligible when applying the novel planar mesh electrode. This reduction of gas consumption is due to the generation of a hot spot along with high cathode temperature and low cathode fall voltage. (orig.)

  9. Study of the cathode region of mercury-free He-Xe low-pressure gas-discharge lamps with planar mesh electrode; Untersuchung der Kathodenregion von quecksilberfreien He-Xe Niederdruckgasentladungslampen mit planarer Geflechtelektrode

    Energy Technology Data Exchange (ETDEWEB)

    Winter, Joern

    2009-12-04

    In the present work the cathode region of a mercury-free helium-xenon low pressure discharge in spot mode was experimentally investigated. Due to the emission of electrons, the production of ions and metastable atoms as well as lifetime limiting processes the cathode region is of particular interest. To implement a discharge in spot mode a novel planar mesh electrode was developed and used as cathode. Applying the space resolved laser-atom-absorption-spectroscopy method (LAAS) the absolute particle densities of the two lowest excited xenon atoms and the gas temperature in the cathode region were determined, whereas the strong spot plasma inhomogeneity was considered. Both the excited xenon particle density and the gas temperature strongly decrease in radial and axial direction. Particularly the gas temperature has a value of about 650 K in a 1mm cathode distance and does clearly exceed room temperature. Furthermore the spectrum of the hot spot on the cathode surface was detected by means of optical emission spectroscopy. From this spectrum the temperature distribution of the cathode spot was obtained by fitting Planck's law. The temperature distribution shows a distinct maximum, which in dependence of the discharge current reaches values of 1414 K at 40 mA and 1524 K at 80 mA. From that maximum a steep direction-independent temperature decrease was obtained. A technological important aspect concerning the lifetime of a xenon based mercury-free discharge lamp is the problematic effect of the xenon gas consumption. In this work it is shown that in contrary to an industrial made standard cup electrode, which is broadly used in light advertising lamps, the gas consumption is negligible when applying the novel planar mesh electrode. This reduction of gas consumption is due to the generation of a hot spot along with high cathode temperature and low cathode fall voltage. (orig.)

  10. UV-Enhanced Ethanol Sensing Properties of RF Magnetron-Sputtered ZnO Film.

    Science.gov (United States)

    Huang, Jinyu; Du, Yu; Wang, Quan; Zhang, Hao; Geng, Youfu; Li, Xuejin; Tian, Xiaoqing

    2017-12-26

    ZnO film was deposited by the magnetron sputtering method. The thickness of ZnO film is approximately 2 μm. The influence of UV light illumination on C₂H₅OH sensing properties of ZnO film was investigated. Gas sensing results revealed that the UV-illuminated ZnO film displays excellent C₂H₅OH characteristics in terms of high sensitivity, excellent selectivity, rapid response/recovery, and low detection limit down to 0.1 ppm. The excellent sensing performance of the sensor with UV activation could be attributed to the photocatalytic oxidation of ethanol on the surface of the ZnO film, the planar film structure with high utilizing efficiency of UV light, high electron mobility, and a good surface/volume ratio of of ZnO film with a relatively rough and porous surface.

  11. Distribution of Fe atom density in a dc magnetron sputtering plasma source measured by laser-induced fluorescence imaging spectroscopy

    Science.gov (United States)

    Shibagaki, K.; Nafarizal, N.; Sasaki, K.; Toyoda, H.; Iwata, S.; Kato, T.; Tsunashima, S.; Sugai, H.

    2003-10-01

    Magnetron sputtering discharge is widely used as an efficient method for thin film fabrication. In order to achieve the optimized fabrication, understanding of the kinetics in plasmas is essential. In the present work, we measured the density distribution of sputtered Fe atoms using laser-induced fluorescence imaging spectroscopy. A dc magnetron plasma source with a Fe target was used. An area of 20 × 2 mm in front of the target was irradiated by a tunable laser beam having a planar shape. The picture of laser-induced fluorescence on the laser beam was taken using an ICCD camera. In this way, we obtained the two-dimensional image of the Fe atom density. As a result, it has been found that the Fe atom density observed at a distance of several centimeters from the target is higher than that adjacent to the target, when the Ar gas pressure was relatively high. It is suggested from this result that some gas-phase production processes of Fe atoms are available in the plasma. This work has been performed under the 21st Century COE Program by the Ministry of Education, Culture, Sports, Science and Technology in Japan.

  12. Monte Carlo simulation of ionization in a magnetron plasma

    International Nuclear Information System (INIS)

    Miranda, J.E.; Goeckner, M.J.; Goree, J.; Sheridan, T.E.

    1990-01-01

    A Monte Carlo simulation of electrons emitted from the cathode of a planar magnetron is tested against experiments that were reported by Wendt, Lieberman, and Meuth [J. Vac. Sci. Technol. A 6, 1827 (1988)] and by Gu and Lieberman [J. Vac. Sci. Technol. A 6, 2960 (1988)]. Comparing their measurements of the radial profile of current and the axial profile of optical emission to the ionization profiles predicted by the model, we find good agreement for a typical magnetic field strength of 456 G. We also find that at 456 G the product of the average number of ionizations left-angle N i right-angle and the secondary electron emission coefficient γ is ∼1. This indicates that secondary emission contributes significantly to the ionization that sustains the discharge. At 171 G, however, left-angle N i right-angle γ much-lt 1, revealing that cathode emission is inadequate to sustain a discharge at a low magnetic field

  13. Plasma ``anti-assistance'' and ``self-assistance'' to high power impulse magnetron sputtering

    Science.gov (United States)

    Anders, André; Yushkov, Georgy Yu.

    2009-04-01

    A plasma assistance system was investigated with the goal to operate high power impulse magnetron sputtering (HiPIMS) at lower pressure than usual, thereby to enhance the utilization of the ballistic atoms and ions with high kinetic energy in the film growth process. Gas plasma flow from a constricted plasma source was aimed at the magnetron target. Contrary to initial expectations, such plasma assistance turned out to be contraproductive because it led to the extinction of the magnetron discharge. The effect can be explained by gas rarefaction. A better method of reducing the necessary gas pressure is operation at relatively high pulse repetition rates where the afterglow plasma of one pulse assists in the development of the next pulse. Here we show that this method, known from medium-frequency (MF) pulsed sputtering, is also very important at the much lower pulse repetition rates of HiPIMS. A minimum in the possible operational pressure is found in the frequency region between HiPIMS and MF pulsed sputtering.

  14. Plasma 'anti-assistance' and 'self-assistance' to high power impulse magnetron sputtering

    International Nuclear Information System (INIS)

    Anders, Andre; Yushkov, Georgy Yu.

    2009-01-01

    A plasma assistance system was investigated with the goal to operate high power impulse magnetron sputtering (HiPIMS) at lower pressure than usual, thereby to enhance the utilization of the ballistic atoms and ions with high kinetic energy in the film growth process. Gas plasma flow from a constricted plasma source was aimed at the magnetron target. Contrary to initial expectations, such plasma assistance turned out to be contraproductive because it led to the extinction of the magnetron discharge. The effect can be explained by gas rarefaction. A better method of reducing the necessary gas pressure is operation at relatively high pulse repetition rates where the afterglow plasma of one pulse assists in the development of the next pulse. Here we show that this method, known from medium-frequency (MF) pulsed sputtering, is also very important at the much lower pulse repetition rates of HiPIMS. A minimum in the possible operational pressure is found in the frequency region between HiPIMS and MF pulsed sputtering

  15. Dependence of plasma characteristics on dc magnetron sputter parameters

    International Nuclear Information System (INIS)

    Wu, S.Z.

    2005-01-01

    Plasma discharge characteristics of a dc magnetron system were measured by a single Langmuir probe at the center axis of the dual-side process chamber. Plasma potential, floating potential, electron and ion densities, and electron temperature were extracted with varying dc power and gas pressure during sputter deposition of a metal target; strong correlations were shown between these plasma parameters and the sputter parameters. The electron density was controlled mostly by secondary electron generation in constant power mode, while plasma potential reflects the confinement space variation due to change of discharge voltage. When discharge pressure was varied, plasma density increases with the increased amount of free stock molecules, while electron temperature inversely decreased, due to energy-loss collision events. In low-pressure discharges, the electron energy distribution function measurements show more distinctive bi-Maxwellian distribution, with the fast electron temperature gradually decreases with increased gas pressure

  16. Low-temperature growth of low friction wear-resistant amorphous carbon nitride thin films by mid-frequency, high power impulse, and direct current magnetron sputtering

    International Nuclear Information System (INIS)

    Bakoglidis, Konstantinos D.; Schmidt, Susann; Garbrecht, Magnus; Ivanov, Ivan G.; Jensen, Jens; Greczynski, Grzegorz; Hultman, Lars

    2015-01-01

    The potential of different magnetron sputtering techniques for the synthesis of low friction and wear resistant amorphous carbon nitride (a-CN x ) thin films onto temperature-sensitive AISI52100 bearing steel, but also Si(001) substrates was studied. Hence, a substrate temperature of 150 °C was chosen for the film synthesis. The a-CN x films were deposited using mid-frequency magnetron sputtering (MFMS) with an MF bias voltage, high power impulse magnetron sputtering (HiPIMS) with a synchronized HiPIMS bias voltage, and direct current magnetron sputtering (DCMS) with a DC bias voltage. The films were deposited using a N 2 /Ar flow ratio of 0.16 at the total pressure of 400 mPa. The negative bias voltage, V s , was varied from 20 to 120 V in each of the three deposition modes. The microstructure of the films was characterized by high-resolution transmission electron microscopy and selected area electron diffraction, while the film morphology was investigated by scanning electron microscopy. All films possessed an amorphous microstructure, while the film morphology changed with the bias voltage. Layers grown applying the lowest substrate bias of 20 V exhibited pronounced intercolumnar porosity, independent of the sputter technique. Voids closed and dense films are formed at V s  ≥ 60 V, V s  ≥ 100 V, and V s  = 120 V for MFMS, DCMS, and HiPIMS, respectively. X-ray photoelectron spectroscopy revealed that the nitrogen-to-carbon ratio, N/C, of the films ranged between 0.2 and 0.24. Elastic recoil detection analysis showed that Ar content varied between 0 and 0.8 at. % and increased as a function of V s for all deposition techniques. All films exhibited compressive residual stress, σ, which depends on the growth method; HiPIMS produces the least stressed films with values ranging between −0.4 and −1.2 GPa for all V s , while CN x films deposited by MFMS showed residual stresses up to −4.2 GPa. Nanoindentation showed a significant

  17. Morphology control of tungsten nanorods grown by glancing angle RF magnetron sputtering under variable argon pressure and flow rate

    International Nuclear Information System (INIS)

    Khedir, Khedir R.; Kannarpady, Ganesh K.; Ishihara, Hidetaka; Woo, Justin; Ryerson, Charles; Biris, Alexandru S.

    2010-01-01

    Morphologically novel tungsten nanorods (WNRs) with the co-existence of two crystalline phases, α-W (thermodynamically stable) and β-W, were fabricated by glancing angle RF magnetron sputtering technique under various Ar pressures and flow rates. For these nanorods, a significant variation in their morphology and surface roughness was observed. These structures could be useful in a wide range of applications such as field emission, robust superhydrophobic coatings, energy, and medicine.

  18. Structural and electrical properties of sputtering power and gas pressure on Ti-dope In2O3 transparent conductive films by RF magnetron sputtering

    Science.gov (United States)

    Chaoumead, Accarat; Joo, Bong-Hyun; Kwak, Dong-Joo; Sung, Youl-Moon

    2013-06-01

    Transparent conductive titanium-doped indium oxide (ITiO) films were deposited on Corning glass substrates by RF magnetron sputtering method. The effects of RF sputtering power and Ar gas pressure on the structural and electrical properties of the films were investigated experimentally, using a 2.5 wt% TiO2-doped In2O3 target. The deposition rate was in the range of around 20-60 nm/min under the experimental conditions of 5-20 mTorr of gas pressure and 220-350 W of RF power. The lowest resistivity of 1.2 × 10-4 Ω cm, the average optical transmittance of 75%, the high hall mobility of 47.03 cm2/V s and the relatively low carrier concentration of 1.15E+21 cm-3 were obtained for the ITiO film, prepared at RF power of 300 W and Ar gas pressure of 15 mTorr. This resistivity of 1.2 × 10-4 Ω cm is low enough as a transparent conducting layer in various electro-optical devices and it is comparable with that of ITO or ZnO:Al conducting layer.

  19. Origin of stress in radio frequency magnetron sputtered zinc oxide thin films

    Science.gov (United States)

    Menon, Rashmi; Gupta, Vinay; Tan, H. H.; Sreenivas, K.; Jagadish, C.

    2011-03-01

    Highly c-axis oriented ZnO thin films have been deposited on silicon substrates by planar rf magnetron sputtering under varying pressure (10-50 mTorr) and oxygen percentage (50-100%) in the reactive gas (Ar + O2) mixture. The as-grown films were found to be stressed over a wide range from -1 × 1011 to -2 × 108 dyne/cm2 that in turn depends strongly on the processing conditions, and the film becomes stress free at a unique combination of sputtering pressure and reactive gas composition. Raman spectroscopy and photoluminescence (PL) analyses identified the origin of stress as lattice distortion due to defects introduced in the ZnO thin film. FTIR study reveals that Zn-O bond becomes stronger with the increase in oxygen fraction in the reactive gas mixture. The lattice distortion or stress depends on the type of defects introduced during deposition. PL spectra show the formation of a shoulder in band emission with an increase in the processing pressure and are related to the presence of stress. The ratio of band emission to defect emission decreases with the increase in oxygen percentage from 50 to 100%. The studies show a correlation of stress with the structural, vibrational, and photoluminescence properties of the ZnO thin film. The systematic study of the stress will help in the fabrication of efficient devices based on ZnO film.

  20. Temperature measurement in low pressure plasmas. Temperaturmessungen im Niederdruckplasma

    Energy Technology Data Exchange (ETDEWEB)

    Rosenbauer, K.A.; Wilting, H.; Schramm, G. (Duesseldorf Univ. (Germany, F.R.). Abt. fuer Histologie und Embryologie)

    1989-11-01

    The present work discusses the influence of various parameters on the substrate temperature in a low pressure plasma. The measurement method chosen utilized Signotherm (Merck) temperature sensors embedded in silicon between two glass substrates. All measurements were made in a 200 G Plasma Processor from Technics Plasma GmbH. The substrate temperature is dependent on the process time, the RF power, the process gas and the position in the chamber. The substrate temperature increases with increasing process time and increasing power. Due to the location of the microwave port from the magnetron to the chamber, the substrate temperature is highest in the center of the chamber. Measurements performed in an air plasma yielded higher results than in an oxygen plasma. (orig.).

  1. Properties of tungsten films prepared by magnetron sputtering

    International Nuclear Information System (INIS)

    Ahn, K.Y.; Ting, C.Y.; Brodsky, S.B.; Fryer, P.M.; Davari, B.; Angillelo, J.; Herd, S.R.; Licata, T.

    1986-01-01

    High-rate magnetron sputtering is a relatively simple process to produce tungsten films with good electrical and mechanical properties, and it offers good uniformity, reproducibility, process flexibility, and high throughput. The purity of the sputtered films is affected by the target purity (cold-pressed 99.95%, chemical vapor deposited 99.99% and cast 99.999%), base pressure, deposition rate, and substrate bias. Typical resistivity in films of 2000 to 3000A thickness deposited on Si, poly-Si, and SiO/sub 2/ ranges from 10 to 12 μΩ-cm, and this may be compared with 6 and 11 μΩ-cm by high-temperature evaporation and chemical vapor deposition, respectively. The presence of biaxial stress caused by substrate scanning was determined by x-ray technique. The sputtered films exhibit high compressive stress when deposited at low Ar pressure. It decreases with increasing pressure, and eventually changes sign to become tensile, and increases further with increasing pressure. Effects of processing parameters on films properties, and a comparison of film properties prepared by evaporation and chemical vapor deposition are discussed

  2. Low-temperature growth of low friction wear-resistant amorphous carbon nitride thin films by mid-frequency, high power impulse, and direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Bakoglidis, Konstantinos D., E-mail: konba@ifm.liu.se; Schmidt, Susann; Garbrecht, Magnus; Ivanov, Ivan G.; Jensen, Jens; Greczynski, Grzegorz; Hultman, Lars [Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden)

    2015-09-15

    The potential of different magnetron sputtering techniques for the synthesis of low friction and wear resistant amorphous carbon nitride (a-CN{sub x}) thin films onto temperature-sensitive AISI52100 bearing steel, but also Si(001) substrates was studied. Hence, a substrate temperature of 150 °C was chosen for the film synthesis. The a-CN{sub x} films were deposited using mid-frequency magnetron sputtering (MFMS) with an MF bias voltage, high power impulse magnetron sputtering (HiPIMS) with a synchronized HiPIMS bias voltage, and direct current magnetron sputtering (DCMS) with a DC bias voltage. The films were deposited using a N{sub 2}/Ar flow ratio of 0.16 at the total pressure of 400 mPa. The negative bias voltage, V{sub s}, was varied from 20 to 120 V in each of the three deposition modes. The microstructure of the films was characterized by high-resolution transmission electron microscopy and selected area electron diffraction, while the film morphology was investigated by scanning electron microscopy. All films possessed an amorphous microstructure, while the film morphology changed with the bias voltage. Layers grown applying the lowest substrate bias of 20 V exhibited pronounced intercolumnar porosity, independent of the sputter technique. Voids closed and dense films are formed at V{sub s} ≥ 60 V, V{sub s} ≥ 100 V, and V{sub s} = 120 V for MFMS, DCMS, and HiPIMS, respectively. X-ray photoelectron spectroscopy revealed that the nitrogen-to-carbon ratio, N/C, of the films ranged between 0.2 and 0.24. Elastic recoil detection analysis showed that Ar content varied between 0 and 0.8 at. % and increased as a function of V{sub s} for all deposition techniques. All films exhibited compressive residual stress, σ, which depends on the growth method; HiPIMS produces the least stressed films with values ranging between −0.4 and −1.2 GPa for all V{sub s}, while CN{sub x} films deposited by MFMS showed residual stresses up to −4.2

  3. A novel injection-locked amplitude-modulated magnetron at 1497 MHz

    Energy Technology Data Exchange (ETDEWEB)

    Neubauer, Michael [Muons Inc., Batavia, IL (United States); Wang, Haipeng [Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States)

    2015-12-15

    Thomas Jefferson National Accelerator Facility (JLab) uses low efficiency klystrons in the CEBAF machine. In the older portion they operate at 30% efficiency with a tube mean time between failure (MTBF) of five to six years. A highly efficient source (>55-60%) must provide a high degree of backwards compatibility, both in size and voltage requirements, to replace the klystron presently used at JLab, while providing energy savings. Muons, Inc. is developing a highly reliable, highly efficient RF source based upon a novel injection-locked amplitude modulated (AM) magnetron with a lower total cost of ownership, >80% efficiency, and MTBF of six to seven years. The design of the RF source is based upon a single injection-locked magnetron system at 8 kW capable of operating up to 13 kW, using the magnetron magnetic field to achieve the AM required for backwards compatibility to compensate for microphonics and beam loads. A novel injection-locked 1497 MHz 8 kW AM magnetron with a trim magnetic coil was designed and its operation numerically simulated during the Phase I project. The low-level RF system to control the trim field and magnetron anode voltage was designed and modeled for operation at the modulation frequencies of the microphonics. A plan for constructing a prototype magnetron and control system was developed.

  4. Experimental study of ablation pressures and target velocities obtained in 0. 26. mu. m wavelength laser experiments in planar geometry

    Energy Technology Data Exchange (ETDEWEB)

    Fabbro, R.; Faral, B.; Virmont, J.; Cottet, F.; Romain, J.P.; Pepin, H.

    1985-11-01

    In 0.26 ..mu..m wavelength laser experiments that were performed in planar geometry with irradiances between 10/sup 13/ and 10/sup 15/ W/cm/sup 2/, the ablation pressure and the target velocity have been measured using a shock-velocity measurement and the double foil technique, respectively. The conditions are discussed that must be satisfied if the double-foil technique is to give an accurate measurement of the velocity of the dense part of the target. The rocket model has also been improved using a time-dependent applied pressure pulse, in order to accurately describe the relation between ablation pressure, target velocity, and ablated fraction. Pressures up to 50 Mbar have been easily generated since lateral energy transport is rather low with a 0.26 ..mu..m wavelength laser.

  5. Phase Grouping of Larmor Electrons by a Synchronous Wave in Controlled Magnetrons

    Energy Technology Data Exchange (ETDEWEB)

    Kazakevich, G. [MUONS Inc., Batavia; Johnson, R. [MUONS Inc., Batavia; Lebedev, V. [Fermilab; Yakovlev, V. [Fermilab

    2018-04-01

    A simplified analytical model based on the charge drift approximation has been developed. It considers the resonant interaction of the synchronous wave with the flow of Larmor electrons in a magnetron. The model predicts stable coherent generation of the tube above and below the threshold of self-excitation. This occurs if the magnetron is driven by a sufficient resonant injected signal (up to -10 dB). The model substantiates precise stability, high efficiency and low noise at the range of the magnetron power control over 10 dB by variation of the magnetron current. The model and the verifying experiments with 2.45 GHz, 1 kW magnetrons are discussed.

  6. Resonance transparency with low-loss in toroidal planar metamaterial

    Science.gov (United States)

    Xiang, Tianyu; Lei, Tao; Hu, Sen; Chen, Jiao; Huang, Xiaojun; Yang, Helin

    2018-03-01

    A compact planar construction composed of asymmetric split ring resonators was designed with a low-loss, high Q-factor resonance transparency at microwave frequency. The singularity property of the proposed metamaterial owing to the enhanced toroidal dipole T is demonstrated via numerical and experimental methods. The transmission peak can reach up to 0.91 and the loss is perfectly repressed, which can be testified by radiated power, H-field distributions, and the imaginary parts of effective permittivity and permeability. The designed planar metamaterial may have numerous potential applications at microwave, terahertz, and optical frequency, e.g., for ultrasensitive sensing, slow-light devices, lasing spacers, even invisible information transfer.

  7. Contamination of magnetron sputtered metallic films by oxygen from residual atmosphere in deposition chamber

    Czech Academy of Sciences Publication Activity Database

    Pokorný, Petr; Musil, Jindřich; Fitl, Přemysl; Novotný, Michal; Lančok, Ján; Bulíř, Jiří

    2015-01-01

    Roč. 12, č. 5 (2015), s. 416-421 ISSN 1612-8850 R&D Projects: GA ČR(CZ) GAP108/11/1298; GA ČR(CZ) GAP108/11/1312; GA ČR(CZ) GAP108/11/0958; GA ČR(CZ) GA14-10279S Institutional support: RVO:68378271 Keywords : contamination * low-pressure discharges * magnetron * metallic films * sputtering Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.713, year: 2015

  8. Physics and phenomena in pulsed magnetrons: an overview

    International Nuclear Information System (INIS)

    Bradley, J W; Welzel, T

    2009-01-01

    This paper reviews the contribution made to the observation and understanding of the basic physical processes occurring in an important type of magnetized low-pressure plasma discharge, the pulsed magnetron. In industry, these plasma sources are operated typically in reactive mode where a cathode is sputtered in the presence of both chemically reactive and noble gases typically with the power modulated in the mid-frequency (5-350 kHz) range. In this review, we concentrate mostly, however, on physics-based studies carried out on magnetron systems operated in argon. This simplifies the physical-chemical processes occurring and makes interpretation of the observations somewhat easier. Since their first recorded use in 1993 there have been more than 300 peer-reviewed paper publications concerned with pulsed magnetrons, dealing wholly or in part with fundamental observations and basic studies. The fundamentals of these plasmas and the relationship between the plasma parameters and thin film quality regularly have whole sessions at international conferences devoted to them; however, since many different types of magnetron geometries have been used worldwide with different operating parameters the important results are often difficult to tease out. For example, we find the detailed observations of the plasma parameter (particle density and temperature) evolution from experiment to experiment are at best difficult to compare and at worst contradictory. We review in turn five major areas of studies which are addressed in the literature and try to draw out the major results. These areas are: fast electron generation, bulk plasma heating, short and long-term plasma parameter rise and decay rates, plasma potential modulation and transient phenomena. The influence of these phenomena on the ion energy and ion energy flux at the substrate is discussed. This review, although not exhaustive, will serve as a useful guide for more in-depth investigations using the referenced

  9. Origin of stress in radio frequency magnetron sputtered zinc oxide thin films

    International Nuclear Information System (INIS)

    Menon, Rashmi; Gupta, Vinay; Sreenivas, K.; Tan, H. H.; Jagadish, C.

    2011-01-01

    Highly c-axis oriented ZnO thin films have been deposited on silicon substrates by planar rf magnetron sputtering under varying pressure (10-50 mTorr) and oxygen percentage (50-100%) in the reactive gas (Ar + O 2 ) mixture. The as-grown films were found to be stressed over a wide range from -1 x 10 11 to -2 x 10 8 dyne/cm 2 that in turn depends strongly on the processing conditions, and the film becomes stress free at a unique combination of sputtering pressure and reactive gas composition. Raman spectroscopy and photoluminescence (PL) analyses identified the origin of stress as lattice distortion due to defects introduced in the ZnO thin film. FTIR study reveals that Zn-O bond becomes stronger with the increase in oxygen fraction in the reactive gas mixture. The lattice distortion or stress depends on the type of defects introduced during deposition. PL spectra show the formation of a shoulder in band emission with an increase in the processing pressure and are related to the presence of stress. The ratio of band emission to defect emission decreases with the increase in oxygen percentage from 50 to 100%. The studies show a correlation of stress with the structural, vibrational, and photoluminescence properties of the ZnO thin film. The systematic study of the stress will help in the fabrication of efficient devices based on ZnO film.

  10. Reconstruction of the static magnetic field of a magnetron

    Science.gov (United States)

    Krüger, Dennis; Köhn, Kevin; Gallian, Sara; Brinkmann, Ralf Peter

    2018-06-01

    The simulation of magnetron discharges requires a quantitatively correct mathematical model of the magnetic field structure. This study presents a method to construct such a model on the basis of a spatially restricted set of experimental data and a plausible a priori assumption on the magnetic field configuration. The example in focus is that of a planar circular magnetron. The experimental data are Hall probe measurements of the magnetic flux density in an accessible region above the magnetron plane [P. D. Machura et al., Plasma Sources Sci. Technol. 23, 065043 (2014)]. The a priori assumption reflects the actual design of the device, and it takes the magnetic field emerging from a center magnet of strength m C and vertical position d C and a ring magnet of strength m R , vertical position d R , and radius R. An analytical representation of the assumed field configuration can be formulated in terms of generalized hypergeometric functions. Fitting the ansatz to the experimental data with a least square method results in a fully specified analytical field model that agrees well with the data inside the accessible region and, moreover, is physically plausible in the regions outside of it. The outcome proves superior to the result of an alternative approach which starts from a multimode solution of the vacuum field problem formulated in terms of polar Bessel functions and vertical exponentials. As a first application of the obtained field model, typical electron and ion Larmor radii and the gradient and curvature drift velocities of the electron guiding center are calculated.

  11. Deposition of indium tin oxide films on acrylic substrates by radiofrequency magnetron sputtering

    International Nuclear Information System (INIS)

    Chiou, B.S.; Hsieh, S.T.; Wu, W.F.

    1994-01-01

    Indium tin oxide (ITO) films were deposited onto acrylic substrates by rf magnetron sputtering. Low substrate temperature (< 80 C) and low rf power (< 28 W) were maintained during sputtering to prevent acrylic substrate deformation. The influence of sputtering parameters, such as rf power, target-to-substrate distance, and chamber pressure, on the film deposition rate, the electrical properties, as well as the optical properties of the deposited films was investigated. Both the refractive index and the extinction coefficient were derived. The high reflection at wavelengths greater than 3 μm made these sputtered ITO films applicable to infrared mirrors

  12. Low-pressure glow discharges with oscillating electrons in different electrode systems

    International Nuclear Information System (INIS)

    Bersenev, V.V.; Gavriolv, N.V.; Nikulin, S.P.

    1995-01-01

    One of the main applications of low - pressure glow discharges is the development on their basis of charged - particle beam sources. The use of glow discharges with oscillating electrons, which can operate stably in the voltage and pressure range to the left of the left branch of Pashen's curve, shows promise, because the decrease in critical pressure p 0 , below which the discharge operation becomes impossible, in the discharge system of a source promotes an increase in the electrical strength of its accelerating system. This, in its turn, makes possible the expansion of the operation range of accelerating voltages. This experimental investigation of glow discharges in such well - known systems with oscillating electrons, as Hollow Cathode (HC), Penning's System (PS) and Inverse Magnetron (IM), is aimed at revealing the system operating at the lowest pressure. Besides, both common features and peculiarities of discharge operation in these systems are discussed. Though there is an extensive amount of published information covering all the specified discharges, the carrying out of such investigation is justified, since a comparative analysis of results obtained by different authors is hampered by various conditions of their experiments

  13. Discharge runaway in high power impulse magnetron sputtering of carbon: the effect of gas pressure, composition and target peak voltage

    Science.gov (United States)

    Vitelaru, Catalin; Aijaz, Asim; Constantina Parau, Anca; Kiss, Adrian Emil; Sobetkii, Arcadie; Kubart, Tomas

    2018-04-01

    Pressure and target voltage driven discharge runaway from low to high discharge current density regimes in high power impulse magnetron sputtering of carbon is investigated. The main purpose is to provide a meaningful insight of the discharge dynamics, with the ultimate goal to establish a correlation between discharge properties and process parameters to control the film growth. This is achieved by examining a wide range of pressures (2–20 mTorr) and target voltages (700–850 V) and measuring ion saturation current density at the substrate position. We show that the minimum plasma impedance is an important parameter identifying the discharge transition as well as establishing a stable operating condition. Using the formalism of generalized recycling model, we introduce a new parameter, ‘recycling ratio’, to quantify the process gas recycling for specific process conditions. The model takes into account the ion flux to the target, the amount of gas available, and the amount of gas required for sustaining the discharge. We show that this parameter describes the relation between the gas recycling and the discharge current density. As a test case, we discuss the pressure and voltage driven transitions by changing the gas composition when adding Ne into the discharge. We propose that standard Ar HiPIMS discharges operated with significant gas recycling do not require Ne to increase the carbon ionization.

  14. Low resistivity of Ni–Al co-doped ZnO thin films deposited by DC magnetron sputtering at low sputtering power

    Energy Technology Data Exchange (ETDEWEB)

    Lee, JongWoo [Department of Materials Science and Engineering, Pusan National University, San 30 Jangjeon-dong, Geumjeong-gu, Busan 609-735 (Korea, Republic of); Hui, K.N. [Department of Mechanical Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791 (Korea, Republic of); Hui, K.S., E-mail: kshui@hanyang.ac.kr [Department of Mechanical Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791 (Korea, Republic of); Cho, Y.R., E-mail: yescho@pusan.ac.kr [Department of Materials Science and Engineering, Pusan National University, San 30 Jangjeon-dong, Geumjeong-gu, Busan 609-735 (Korea, Republic of); Chun, Ho-Hwan [Global Core Research Center for Ships and Offshore Plants (GCRC-SOP), Pusan National University, San 30 Jangjeon-dong, Geumjeong-gu, Busan 609-735 (Korea, Republic of)

    2014-02-28

    Ni–Al co-doped ZnO (NiAl:ZnO) thin films were deposited on glass substrates by DC magnetron sputtering in Ar using a single ceramic, spark-plasma-sintered target with 2 wt% Al and 5 wt% Ni. The effects of the sputtering power and gas pressure on the NiAl:ZnO films were studied. The structural, electrical, and optical properties of the films were characterized by X-ray diffraction, field emission scanning electron microscopy, Hall effect measurements and UV–vis transmission spectroscopy. As the sputtering power and gas pressure increased, the crystallinity, electrical properties and optical band gap of the films were improved. The NiAl:ZnO film deposited at 40 W at 6.0 mTorr had the strongest (0 0 2) XRD peak and the lowest resistivity of approximately 2.19 × 10{sup −3} Ω cm with an optical transmittance of 90%.

  15. Low-frequency noise in planar Hall effect bridge sensors

    DEFF Research Database (Denmark)

    Persson, Anders; Bejhedb, R.S.; Bejhed, R.S.

    2011-01-01

    The low-frequency characteristics of planar Hall effect bridge sensors are investigated as function of the sensor bias current and the applied magnetic field. The noise spectra reveal a Johnson-like spectrum at high frequencies, and a 1/f-like excess noise spectrum at lower frequencies, with a kn...

  16. Structure and oxygen incorporation in low pressure sputtered YBCO films

    International Nuclear Information System (INIS)

    Chaudhary, S.; Pandya, D. K.; Kashyap, S. C.

    2002-01-01

    Thin films of YBa 2 Cu 3 O 7- δ (YBCO) have been successfully grown by reactive RF-magnetron sputtering technique at low pressure. The oxygen partial pressure of 0.95 mTorr, a total pressure (argon and oxygen) of 1.9 mTorr, and a substrate temperature of 775 grad C resulted in good quality films with T C (R=0) = 85.3 K and J Cmag (4.2 K) ≅ 2x10 7 A/cm 2 . The incorporation of oxygen in the as-grown films has been controlled by using different ambient - oxygen, air or argon during in-situ cooling. The superconducting behaviour of the films was studied using resistance-temperature and low field ac-susceptibility measurements and correlated with their structure. All the films exhibited metallic conduction in the normal state. The oxygen- and air- cooled films were superconducting, possessing the usual orthorhombic structure. The argon-cooled films were non-superconducting possessing the tetragonal structure, thus implying that the structure of the film during deposition is tetragonal which transforms to either of the oxygen rich orthorhombic-I or -II phases depending upon the oxygen/air ambient. The 'δ' values of 0.14, 0.32 and 0.70 and higher 'c'-parameters of 1.1785, 1.180 and 1.183 nm have been obtained for oxygen, air and argon cooled films respectively. (Authors)

  17. Low temperature ITO thin film deposition on PES substrate using pulse magnetron sputtering

    International Nuclear Information System (INIS)

    Lin, Y.C.; Li, J.Y.; Yen, W.T.

    2008-01-01

    Experiments were conducted using pulse magnetron sputtering (PMS) to deposit transparent conducting indium tin oxide (ITO) thin film onto flexible polyethersulfone (PES) plastic substrates. The thin film microstructure, optoelectronic and residual stress were analyzed using the modulating PMS power, work pressure, pulse frequency, duty cycle and cycle time process parameters. The residual stress of the thin film was determined by scanning electron microscopy (SEM) combined with the Sony equation. The experimental results show that PMS has a lower process temperature, higher deposition rate and lower resistivity compared with the radio frequency process at the same output power. The duty cycle increase produces the optimum optoelectronic characteristics. When the pressure, power, duty cycle and sputter time are increased, the thin film stress will also increase, causing flexural distortion in the PES plastic substrate. When the deposition thickness reaches 1.5 μm, ITO thin film will appear with a distinct split. Under 5 mtorr work pressure, 60 W power, 33 μs duty time and 2 μs pulse reverse time at duty cycle 95%, thin film with an optimized electrical 3.0 x 10 -4 Ω-cm, RMS surface roughness of 0.85 nm and visible region optical transmittance will be achieved with acquisition of over 85%

  18. The effect of sputtering gas pressure on the structure and optical properties of MgNiO films grown by radio frequency magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Xie, Wuze; Jiao, Shujie, E-mail: shujiejiao@gmail.com; Wang, Dongbo; Gao, Shiyong; Wang, Jinzhong; Yu, Qingjiang; Li, Hongtao

    2017-05-31

    Highlights: • MgNiO thin films were fabricated by radio frequency magnetron sputtering. • The structure and optical properties of MgNiO films were studied. • The mechanism of phase separation was discussed in detail. • The effect of different sputtering pressure also was discussed. - Abstract: In this study, MgNiO thin films were grown on quartz substrates by radio frequency (RF) magnetron sputtering. The influence of different sputtering pressures on the crystalline and optical properties of MgNiO thin films has been studied. X-ray diffraction measurement indicates that the MgNiO films are cubic structure with (200) preferred orientation. UV–vis transmission spectra show that all the MgNiO thin films show more than 75% transmission at visible region, and the absorption edges of all thin films locate at solar-blind region (220 nm–280 nm). The lattice constant and Mg content of MgNiO samples were calculated using X-ray diffraction and transmission spectra data. The phase separation is observed both in the X-ray diffraction patterns and transmission spectra, and the phase separation is studied in detail based on the crystal growth theory and sputtering process.

  19. Transparent conducting Al-doped ZnO thin films prepared by magnetron sputtering with dc and rf powers applied in combination

    International Nuclear Information System (INIS)

    Minami, Tadatsugu; Ohtani, Yuusuke; Miyata, Toshihiro; Kuboi, Takeshi

    2007-01-01

    A newly developed Al-doped ZnO (AZO) thin-film magnetron-sputtering deposition technique that decreases resistivity, improves resistivity distribution, and produces high-rate depositions has been demonstrated by dc magnetron-sputtering depositions that incorporate rf power (dc+rf-MS), either with or without the introduction of H 2 gas into the deposition chamber. The dc+rf-MS preparations were carried out in a pure Ar or an Ar+H 2 (0%-2%) gas atmosphere at a pressure of 0.4 Pa by adding a rf component (13.56 MHz) to a constant dc power of 80 W. The deposition rate in a dc+rf-MS deposition incorporating a rf power of 150 W was approximately 62 nm/min, an increase from the approximately 35 nm/min observed in dc magnetron sputtering with a dc power of 80 W. A resistivity as low as 3x10 -4 Ω cm and an improved resistivity distribution could be obtained in AZO thin films deposited on substrates at a low temperature of 150 deg. C by dc+rf-MS with the introduction of hydrogen gas with a content of 1.5%. This article describes the effects of adding a rf power component (i.e., dc+rf-MS deposition) as well as introducing H 2 gas into dc magnetron-sputtering preparations of transparent conducting AZO thin films

  20. Study of static properties of magnetron-type space charges; Etude des proprietes statiques des charges d'espace du type magnetron

    Energy Technology Data Exchange (ETDEWEB)

    Delcroix, Jean-Loup

    1953-05-30

    This research thesis reports an in-depth analysis of physical properties of static regimes to address the issue of space charges. This theoretical study of the Hull magnetron is followed by the description of experiments on the Hull magnetron which highlight transitions between the different regimes. Then, another theoretical approach aims at generalising the magnetron theory, based on other types of magnetron theory (general equations of magnetron-type space charges, inverted Hull magnetron theory, circular field magnetron theory)

  1. Variable Power, Short Microwave Pulses Generation using a CW Magnetron

    Directory of Open Access Journals (Sweden)

    CIUPA, R.

    2011-05-01

    Full Text Available Fine control of microwave power radiation in medical and scientific applications is a challenging task. Since a commercial Continuous Wave (CW magnetron is the most inexpensive microwave device available today on the market, it becomes the best candidate for a microwave power generator used in medical diathermy and hyperthermia treatments or high efficiency chemical reactions using microwave reactors as well. This article presents a new method for driving a CW magnetron with short pulses, using a modified commercial Zero Voltage Switching (ZVS inverter, software driven by a custom embedded system. The microwave power generator designed with this method can be programmed for output microwave pulses down to 1% of the magnetron's power and allows microwave low frequency pulse modulation in the range of human brain electrical activity, intended for medical applications. Microwave output power continuous control is also possible with the magnetron running in the oscillating area, using a dual frequency Pulse Width Modulation (PWM, where the low frequency PWM pulse is modulating a higher resonant frequency required by the ZVS inverter's transformer. The method presented allows a continuous control of both power and energy (duty-cycle at the inverter's output.

  2. Effect of working pressure on corrosion behavior of nitrogen doped diamond-like carbon thin films deposited by DC magnetron sputtering.

    Science.gov (United States)

    Khun, N W; Liu, E

    2011-06-01

    Nitrogen doped diamond-like carbon thin films were deposited on highly conductive p-silicon(100) substrates using a DC magnetron sputtering deposition system by varying working pressure in the deposition chamber. The bonding structure, adhesion strength, surface roughness and corrosion behavior of the films were investigated by using X-ray photoelectron spectroscopy, micro-Raman spectroscopy, micro-scratch test, atomic force microscopy and potentiodynamic polarization test. A 0.6 M NaCl electrolytic solution was used for the corrosion tests. The optimum corrosion resistance of the films was found at a working pressure of 7 mTorr at which a good balance between the kinetics of the sputtered ions and the surface mobility of the adatoms promoted a microstructure of the films with fewer porosities.

  3. Frontside-micromachined planar piezoresistive vibration sensor: Evaluating performance in the low frequency test range

    Directory of Open Access Journals (Sweden)

    Lan Zhang

    2014-01-01

    Full Text Available Using a surface piezoresistor diffusion method and front-side only micromachining process, a planar piezoresistive vibration sensor was successfully developed with a simple structure, lower processing cost and fewer packaging difficulties. The vibration sensor had a large sector proof mass attached to a narrow flexure. Optimization of the boron diffusion piezoresistor placed on the edge of the narrow flexure greatly improved the sensitivity. Planar vibration sensors were fabricated and measured in order to analyze the effects of the sensor dimensions on performance, including the values of flexure width and the included angle of the sector. Sensitivities of fabricated planar sensors of 0.09–0.46 mV/V/g were measured up to a test frequency of 60 Hz. The sensor functioned at low voltages (<3 V and currents (<1 mA with a high sensitivity and low drift. At low background noise levels, the sensor had performance comparable to a commercial device.

  4. Frontside-micromachined planar piezoresistive vibration sensor: Evaluating performance in the low frequency test range

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Lan; Lu, Jian, E-mail: jian-lu@aist.go.jp; Takagi, Hideki; Maeda, Ryutaro [Research Center for Ubiquitous MEMS and Micro Engineering (UMEMSME), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, 305-8564 (Japan)

    2014-01-15

    Using a surface piezoresistor diffusion method and front-side only micromachining process, a planar piezoresistive vibration sensor was successfully developed with a simple structure, lower processing cost and fewer packaging difficulties. The vibration sensor had a large sector proof mass attached to a narrow flexure. Optimization of the boron diffusion piezoresistor placed on the edge of the narrow flexure greatly improved the sensitivity. Planar vibration sensors were fabricated and measured in order to analyze the effects of the sensor dimensions on performance, including the values of flexure width and the included angle of the sector. Sensitivities of fabricated planar sensors of 0.09–0.46 mV/V/g were measured up to a test frequency of 60 Hz. The sensor functioned at low voltages (<3 V) and currents (<1 mA) with a high sensitivity and low drift. At low background noise levels, the sensor had performance comparable to a commercial device.

  5. TOPICAL REVIEW: Physics and phenomena in pulsed magnetrons: an overview

    Science.gov (United States)

    Bradley, J. W.; Welzel, T.

    2009-05-01

    This paper reviews the contribution made to the observation and understanding of the basic physical processes occurring in an important type of magnetized low-pressure plasma discharge, the pulsed magnetron. In industry, these plasma sources are operated typically in reactive mode where a cathode is sputtered in the presence of both chemically reactive and noble gases typically with the power modulated in the mid-frequency (5-350 kHz) range. In this review, we concentrate mostly, however, on physics-based studies carried out on magnetron systems operated in argon. This simplifies the physical-chemical processes occurring and makes interpretation of the observations somewhat easier. Since their first recorded use in 1993 there have been more than 300 peer-reviewed paper publications concerned with pulsed magnetrons, dealing wholly or in part with fundamental observations and basic studies. The fundamentals of these plasmas and the relationship between the plasma parameters and thin film quality regularly have whole sessions at international conferences devoted to them; however, since many different types of magnetron geometries have been used worldwide with different operating parameters the important results are often difficult to tease out. For example, we find the detailed observations of the plasma parameter (particle density and temperature) evolution from experiment to experiment are at best difficult to compare and at worst contradictory. We review in turn five major areas of studies which are addressed in the literature and try to draw out the major results. These areas are: fast electron generation, bulk plasma heating, short and long-term plasma parameter rise and decay rates, plasma potential modulation and transient phenomena. The influence of these phenomena on the ion energy and ion energy flux at the substrate is discussed. This review, although not exhaustive, will serve as a useful guide for more in-depth investigations using the referenced

  6. Planar Hall ring sensor for ultra-low magnetic moment sensing

    DEFF Research Database (Denmark)

    Hung, Tran Quang; Terki, Ferial; Kamara, Souleymanne

    2015-01-01

    The field sensitivity of a planar Hall effect (PHE) micro-ring type biosensor has been investigated as a function of magnetizing angle of the sensor material, for the sensing of low magnetic moment superparamagnetic labels. The field sensitivity is maximal at a magnetizing angle of α = 20°. At th...

  7. The Pulsed Cylindrical Magnetron for Deposition

    Science.gov (United States)

    Korenev, Sergey

    2012-10-01

    The magnetron sputtering deposition of films and coatings broadly uses in microelectronics, material science, environmental applications and etc. The rate of target evaporation and time for deposition of films and coatings depends on magnetic field. These parameters link with efficiency of gas molecules ionization by electrons. The cylindrical magnetrons use for deposition of films and coatings on inside of pipes for different protective films and coatings in oil, chemical, environmental applications. The classical forming of magnetic field by permanent magnets or coils for big and long cylindrical magnetrons is complicated. The new concept of pulsed cylindrical magnetron for high rate deposition of films and coating for big and long pipes is presented in this paper. The proposed cylindrical magnetron has azimuthally pulsed high magnetic field, which allows forming the high ionized plasma and receiving high rate of evaporation material of target (central electrode). The structure of proposed pulsed cylindrical magnetron sputtering system is given. The main requirements to deposition system are presented. The preliminary data for forming of plasma and deposition of Ta films and coatings on the metal pipers are discussed. The comparison of classical and proposed cylindrical magnetrons is given. The analysis of potential applications is considered.

  8. Analysis of conditions for magnetron discharge initiation at vacuum camera testing

    International Nuclear Information System (INIS)

    Tzeneva, Raina; Dineff, Peter; Darjanova, Denitza

    2002-01-01

    Models of electric field distribution for two typical cases of vacuum camera internal pressure control are investigated. New relations between the maximum magnetron discharge current value I max and the maximum electric field strength radial component value E τ max are established. (Author)

  9. Research and Development for an Alternative RF Source Using Magnetrons in CEBAF

    Science.gov (United States)

    Jacobs, Andrew

    2016-09-01

    At Jefferson Lab, klystrons are currently used as a radiofrequency (RF) power source for the 1497 MHz Continuous Electron Beam Accelerator Facility (CEBAF) Continuous Wave (CW) system. A drop-in replacement for the klystrons in the form of a system of magnetrons is being developed. The klystron DC-RF efficiency at CEBAF is 35-51% while the estimated magnetron efficiency is 80-90%. Thus, the introduction of magnetrons to CEBAF will have enormous benefits in terms of electrical power saving. The primary focus of this project was to characterize a magnetron's frequency pushing and pulling curves at 2.45 GHz with stub tuner and anode current adjustments so that a Low Level RF controller for a new 1.497 GHz magnetron can be built. A Virtual Instrument was created in LabVIEW, and data was taken. The resulting data allowed for the creation of many constant lines of frequency and output power. Additionally, the results provided a characterization of magnetron oven temperature drift over the operation time and the relationship between anode current and frequency. Using these results, the control model of different variables and their feedback or feedforward that affect the frequency pushing and pulling of the magnetron is better developed. Department of Energy, Science Undergraduate Laboratory Internships, and Jefferson Lab.

  10. Low Blood Pressure

    Science.gov (United States)

    ... a problem. Sometimes blood pressure that is too low can also cause problems. Blood pressure is the ... reading is 90/60 or lower, you have low blood pressure. Some people have low blood pressure ...

  11. Overcoming challenges to the formation of high-quality polycrystalline TiO{sub 2}:Ta transparent conducting films by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Neubert, M.; Cornelius, S.; Fiedler, J. [Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden (Germany); Gebel, T.; Liepack, H. [DTF Technology GmbH, 01108 Dresden (Germany); Kolitsch, A. [Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden (Germany); HZDR Innovation GmbH, 01328 Dresden (Germany); Vinnichenko, M. [Fraunhofer-Institut für Keramische Technologien und Systeme, 01277 Dresden (Germany)

    2013-08-28

    The work is focused on understanding the physical processes responsible for the modification of the structure, electrical and optical properties of polycrystalline TiO{sub 2}:Ta films formed by annealing of initially amorphous films grown by direct current magnetron sputtering of electrically conductive ceramic targets. It is shown that fine tuning of the oxygen content during deposition of amorphous TiO{sub 2}:Ta films is critical to achieving low resistivity and high optical transmittance after annealing. Increasing the total pressure during magnetron sputter deposition is shown to decrease the sensitivity of the annealed films to the oxygen flow variation during deposition of the initially amorphous layers. Polycrystalline anatase TiO{sub 2}:Ta films of low electrical resistivity (ρ{sub H} = 1.5 × 10{sup −3}Ω cm), high free electron mobility (μ{sub H} = 8 cm{sup 2}/Vs), and low extinction (k{sub 550nm} = 0.006) are obtained in this way at a total pressure of 2 Pa. The dependence of the polycrystalline film electrical properties on the oxygen content is discussed in terms of Ta dopant electrical activation/deactivation taking into account the formation of compensating defects at different oxygen pressures. The temperature-dependent transport of the polycrystalline anatase TiO{sub 2}:Ta films is investigated showing the dominant role of the optical phonon scattering in the case of films with an optimum Ti/O ratio.

  12. Hydrogenated TiO2 Thin Film for Accelerating Electron Transport in Highly Efficient Planar Perovskite Solar Cells.

    Science.gov (United States)

    Yao, Xin; Liang, Junhui; Li, Yuelong; Luo, Jingshan; Shi, Biao; Wei, Changchun; Zhang, Dekun; Li, Baozhang; Ding, Yi; Zhao, Ying; Zhang, Xiaodan

    2017-10-01

    Intensive studies on low-temperature deposited electron transport materials have been performed to improve the efficiency of n-i-p type planar perovskite solar cells to extend their application on plastic and multijunction device architectures. Here, a TiO 2 film with enhanced conductivity and tailored band edge is prepared by magnetron sputtering at room temperature by hydrogen doping (HTO), which accelerates the electron extraction from perovskite photoabsorber and reduces charge transfer resistance, resulting in an improved short circuit current density and fill factor. The HTO film with upward shifted Fermi level guarantees a smaller loss on V OC and facilitates the growth of high-quality absorber with much larger grains and more uniform size, leading to devices with negligible hysteresis. In comparison with the pristine TiO 2 prepared without hydrogen doping, the HTO-based device exhibits a substantial performance enhancement leading to an efficiency of 19.30% and more stabilized photovoltaic performance maintaining 93% of its initial value after 300 min continuous illumination in the glove box. These properties permit the room-temperature magnetron sputtered HTO film as a promising electron transport material for flexible and tandem perovskite solar cell in the future.

  13. Capabilities of silicon Shottki barriers and planar detectors in low-energy proton spectometry

    Energy Technology Data Exchange (ETDEWEB)

    Verbitskaya, E M; Eremin, V K; Malyarenko, A M; Sakharov, V I; Serenkov, I T; Strokan, N B; Sukhanov, V L

    1987-05-12

    Dependence of the resolution of surface barrier and planar diffusion silicon detectors on proton energy is investigated. The experiment was conducted at the device, representing the double mass spectrometer with the maximal energy of single-charged ions up to 200 keV. Two advantages of using planar diffusion detectors for light low-energy ion spectrometry is established: high energy resolution and independence of signal amplitude of bias voltage. Background noise represents the main factor dictaiting resolution, but fluctuations of losses in input window are sufficient as well. It was concluded that planar detector application for spectrometry of protons with energy of less than 200 keV would improve the resolution up to 2.2 keV without detector cooling.

  14. Study of static properties of magnetron-type space charges

    International Nuclear Information System (INIS)

    Delcroix, Jean-Loup

    1953-01-01

    This research thesis reports an in-depth analysis of physical properties of static regimes to address the issue of space charges. This theoretical study of the Hull magnetron is followed by the description of experiments on the Hull magnetron which highlight transitions between the different regimes. Then, another theoretical approach aims at generalising the magnetron theory, based on other types of magnetron theory (general equations of magnetron-type space charges, inverted Hull magnetron theory, circular field magnetron theory)

  15. GENERAL RULES OF SIC FORMATION IN DIAMOND-CONTAINING COMPOSITION AT LOW PRESSURE

    Directory of Open Access Journals (Sweden)

    A. E. Zhuk

    2007-01-01

    Full Text Available Results of experimental investigations of structure-formation process of «diamond-carbide silicon» composite at low pressure which is obtained by liquid silicon impregnation of a porous blank made of diamond crystals with nano-coatings have made it possible to establish the following general rules of the process concerning a sintering reaction in the coating and composite material: vacuum magnetronic spraying of composite cathodes leads to formation of nano-coating which is made of silicon and hydrogen atoms or clusters, and their subsequent treatment with plasma of glow discharge is accompanied by formation of α-SiC at low temperatures in a hard phase; silicon impregnation at 1500 °C with given pyrolytic carbon in the charge may result in β-SiC matrix formation.The formed «diamond-carbide silicon» composite material contains a frame structure of diamond crystals with nano-coating impregnated by silicon carbide and is characterized by high physical and mechanical properties. 

  16. Plasma properties of RF magnetron sputtering system using Zn target

    Energy Technology Data Exchange (ETDEWEB)

    Nafarizal, N.; Andreas Albert, A. R.; Sharifah Amirah, A. S.; Salwa, O.; Riyaz Ahmad, M. A. [Microelectronic and Nanotechnology - Shamsuddin Research Centre (MiNT-SRC), Faculty of Electrical and Electronic Engineering, Universiti Tun Hussein Onn Malaysia 86400 Parit Raja, Batu Pahat, Johor (Malaysia)

    2012-06-29

    In the present work, we investigate the fundamental properties of magnetron sputtering plasma using Zn target and its deposited Zn thin film. The magnetron sputtering plasma was produced using radio frequency (RF) power supply and Argon (Ar) as ambient gas. A Langmuir probe was used to collect the current from the plasma and from the current intensity, we calculate the electron density and electron temperature. The properties of Zn sputtering plasma at various discharge conditions were studied. At the RF power ranging from 20 to 100 W and gas pressure 5 mTorr, we found that the electron temperature was almost unchanged between 2-2.5 eV. On the other hand, the electron temperature increased drastically from 6 Multiplication-Sign 10{sup 9} to 1 Multiplication-Sign 10{sup 10}cm{sup -3} when the discharge gas pressure increased from 5 to 10 mTorr. The electron microscope images show that the grain size of Zn thin film increase when the discharge power is increased. This may be due to the enhancement of plasma density and sputtered Zn density.

  17. Low Blood Pressure (Hypotension)

    Science.gov (United States)

    ... lowest at night and rises sharply on waking. Blood pressure: How low can you go? What's considered low ... low blood pressure. Medications that can cause low blood pressure Some medications can cause low blood pressure, including: ...

  18. Magnetron plasma and nanotechnology

    International Nuclear Information System (INIS)

    Kashtanov, Pavel V; Smirnov, Boris M; Hippler, Rainer

    2007-01-01

    Magnetron plasma processes involving metal atoms and clusters are reviewed. The formation of metal atoms near the cathode and their nucleation in a buffer gas flow are discussed. The flow of a buffer gas with metal clusters through a magnetron chamber disturbs the equilibrium between the buffer gas flow and clusters near the exit orifice and is accompanied by cluster attachment to the chamber walls. Cluster charging far off the cathode, the disturbance of equilibrium between the buffer gas flow and cluster drift, and the attachment of charged clusters to the chamber walls - the factors determining the output parameters of the cluster beam escaping the magnetron chamber - are analyzed. Cluster deposition on a solid surface and on dusty plasma particles is considered. (reviews of topical problems)

  19. RF magnetron sputtering and evaporation of polyisobutylene and low density polyethylene

    Czech Academy of Sciences Publication Activity Database

    Kousal, J.; Hanuš, J.; Choukourov, A.; Hlídek, P.; Biederman, H.; Slavinská, D.; Zemek, Josef

    2005-01-01

    Roč. 200, 1-4 (2005), s. 472-475 ISSN 0257-8972 R&D Projects: GA MŠk(CZ) OC 527.10; GA MŠk(CZ) ME 553 Institutional research plan: CEZ:AV0Z10100521 Keywords : magnetron * radio frequency * sputtering * polyethylene * polyisobutylene Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.646, year: 2005

  20. Fuzzy tungsten in a magnetron sputtering device

    Energy Technology Data Exchange (ETDEWEB)

    Petty, T.J., E-mail: tjpetty@liv.ac.uk [Department of Electrical Engineering and Electronics, University of Liverpool, Brownlow Hill, Liverpool, L69 3GJ (United Kingdom); Khan, A. [Pariser Building-G11, School of Mechanical, Aerospace and Civil Engineering, The University of Manchester, Manchester, M13 9PL (United Kingdom); Heil, T. [NiCaL, Block C Waterhouse Building, 1-3 Brownlow Street, Liverpool, L69 3GL (United Kingdom); Bradley, J.W., E-mail: j.w.bradley@liverpool.ac.uk [Department of Electrical Engineering and Electronics, University of Liverpool, Brownlow Hill, Liverpool, L69 3GJ (United Kingdom)

    2016-11-15

    Helium ion induced tungsten nanostructure (tungsten fuzz) has been studied in a magnetron sputtering device. Three parameters were varied, the fluence from 3.4 × 10{sup 23}–3.0 × 10{sup 24} m{sup −2}, the He ion energy from 25 to 70 eV, and the surface temperature from 900 to 1200 K. For each sample, SEM images were captured, and measurements of the fuzz layer thickness, surface roughness, reflectivity, and average structure widths are provided. A cross-over point from pre-fuzz to fully formed fuzz is found at 2.4 ± 0.4 × 10{sup 24} m{sup −2}, and a temperature of 1080 ± 60 K. No significant change was observed in the energy sweep. The fuzz is compared to low fluence fuzz created in the PISCES-A linear plasma device. Magnetron fuzz is less uniform than fuzz created by PISCES-A and with generally larger structure widths. The thicknesses of the magnetron samples follow the original Φ{sup 1/2} relation as opposed to the incubation fluence fit. - Highlights: • Fuzz has been created in a magnetron sputtering device. • Three parameters for fuzz formation have been swept. • A cross-over from pre-fuzz to fully formed fuzz is seen. • Evidence for annealing out at lower temperatures than has been seen before. • Evidence to suggest that fuzz grown in discrete exposures is not consistent with fuzz grown in one long exposure.

  1. Fuzzy tungsten in a magnetron sputtering device

    International Nuclear Information System (INIS)

    Petty, T.J.; Khan, A.; Heil, T.; Bradley, J.W.

    2016-01-01

    Helium ion induced tungsten nanostructure (tungsten fuzz) has been studied in a magnetron sputtering device. Three parameters were varied, the fluence from 3.4 × 10 23 –3.0 × 10 24  m −2 , the He ion energy from 25 to 70 eV, and the surface temperature from 900 to 1200 K. For each sample, SEM images were captured, and measurements of the fuzz layer thickness, surface roughness, reflectivity, and average structure widths are provided. A cross-over point from pre-fuzz to fully formed fuzz is found at 2.4 ± 0.4 × 10 24  m −2 , and a temperature of 1080 ± 60 K. No significant change was observed in the energy sweep. The fuzz is compared to low fluence fuzz created in the PISCES-A linear plasma device. Magnetron fuzz is less uniform than fuzz created by PISCES-A and with generally larger structure widths. The thicknesses of the magnetron samples follow the original Φ 1/2 relation as opposed to the incubation fluence fit. - Highlights: • Fuzz has been created in a magnetron sputtering device. • Three parameters for fuzz formation have been swept. • A cross-over from pre-fuzz to fully formed fuzz is seen. • Evidence for annealing out at lower temperatures than has been seen before. • Evidence to suggest that fuzz grown in discrete exposures is not consistent with fuzz grown in one long exposure.

  2. Efficient planar n-i-p type heterojunction flexible perovskite solar cells with sputtered TiO2 electron transporting layers.

    Science.gov (United States)

    Mali, Sawanta S; Hong, Chang Kook; Inamdar, A I; Im, Hyunsik; Shim, Sang Eun

    2017-03-02

    The development of hybrid organo-lead trihalide perovskite solar cells (PSCs) comprising an electron transporting layer (ETL), a perovskite light absorber and a hole transporting layer (HTL) has received significant attention for their potential in efficient PSCs. However, the preparation of a compact and uniform ETL and the formation of a uniform light absorber layer suffer from a high temperature processing treatment and the formation of unwanted perovskite islands, respectively. A low temperature/room temperature processed ETL is one of the best options for the fabrication of flexible PSCs. In the present work, we report the implementation of a room temperature processed compact TiO 2 ETL and the synthesis of extremely uniform flexible planar PSCs based on methylammonium lead mixed halides MAPb(I 1-x Br x ) 3 (x = 0.1) via RF-magnetron sputtering and a toluene dripping treatment, respectively. The compact TiO 2 ETLs with different thicknesses (30 to 100 nm) were directly deposited on a flexible PET coated ITO substrate by varying the RF-sputtering time and used for the fabrication of flexible PSCs. The photovoltaic properties revealed that flexible PSC performance is strongly dependent on the TiO 2 ETL thickness. The open circuit voltage (V OC ) and fill factor (FF) are directly proportional to the TiO 2 ETL thickness while the 50 nm thick TiO 2 ETL shows the highest current density (J SC ) of 20.77 mA cm -2 . Our controlled results reveal that the room temperature RF-magnetron sputtered 50 nm-thick TiO 2 ETL photoelectrode exhibits a power conversion efficiency (PCE) in excess of 15%. The use of room temperature synthesis of the compact TiO 2 ETL by RF magnetron sputtering results in an enhancement of the device performance for cells prepared on flexible substrates. The champion flexible planar PSC based on this architecture exhibited a promising power conversion efficiency as high as 15.88%, featuring a high FF of 0.69 and V OC of 1.108 V with a negligible

  3. Analysis of peer-to-peer locking of magnetrons

    International Nuclear Information System (INIS)

    Pengvanich, P.; Lau, Y. Y.; Cruz, E.; Gilgenbach, R. M.; Hoff, B.; Luginsland, J. W.

    2008-01-01

    The condition for mutual, or peer-to-peer, locking of two magnetrons is derived. This condition reduces to Adler's classical phase-locking condition in the limit where one magnetron becomes the ''master'' and the other becomes the ''slave.'' The formulation is extended to the peer-to-peer locking of N magnetrons, under the assumption that the electromagnetic coupling among the N magnetrons is modeled by an N-port network.

  4. Influence of stress on the structural and dielectric properties of rf magnetron sputtered zinc oxide thin film

    Science.gov (United States)

    Menon, Rashmi; Sreenivas, K.; Gupta, Vinay

    2008-05-01

    Highly c axis oriented zinc oxide (ZnO) thin films have been prepared on 1737 Corning glass substrate by planar rf magnetron sputtering under varying pressure (10-50mTorr) and different oxygen percentage (40%-100%) in reactive gas mixtures. The as-grown ZnO thin films were found to have stress over a wide range from -6×1010to-9×107dynes/cm2. The presence of stress depends strongly on processing conditions, and films become almost stress free under a unique combination of sputtering pressure and reactive gas composition. The studies show a correlation of stress with structural and electrical properties of the ZnO thin film. The stressed films possess high electrical conductivity and exhibits strong dielectric dispersion over a wide frequency (1kHz-1MHz). The dielectric constant ɛ'(ω) of stress free ZnO film was almost frequency independent and was close to the bulk value. The measured value of dc conductivity, σdc(ω) and ac conductivity σac(ω) of stress free ZnO film was 1.3×10-9 and 6.8×10-5Ω-1cm-1, respectively. The observed variation in the structural and electrical properties of ZnO thin film with stress has been analyzed in the light of growth kinetics.

  5. Influence of the microstructure on the corrosion behavior of magnetron sputter-quenched amorphous metallic alloys

    Science.gov (United States)

    Thakoor, A. P.; Khanna, S. K.; Williams, R. M.; Landel, R. F.

    1983-01-01

    The microstructure and corrosion behavior of magnetron sputter deposited amorphous metallic films of (Mo6ORu40)82B18 under varying sputtering atmospheres have been investigated. The microstructural details and topology of the films have been studied by scanning electron microscopy and correlated with the deposition conditions. By reducing the pressure of pure argon gas, the characteristic features of rough surface and columnar growth full of vertical voids can be converted into a mirror-smooth finish with very dense deposits. Films deposited in the presence of O2 or N2 exhibit columnar structure with vertical voids. Film deposited in pure argon at low pressure show remarkably high corrosion resistance due to the formation of a uniform passive surface layer. The influence of the microstructure and surface texture on the corrosion behavior is discussed.

  6. Computer simulation of sputtering of graphite target in magnetron sputtering device with two zones of erosion

    Directory of Open Access Journals (Sweden)

    Bogdanov R.V.

    2015-03-01

    Full Text Available A computer simulation program for discharge in a magnetron sputtering device with two erosion zones was developed. Basic laws of the graphite target sputtering process and transport of sputtered material to the substrate were taken into account in the Monte Carlo code. The results of computer simulation for radial distributions of density and energy flux of carbon atoms on the substrate (at different values of discharge current and pressure of the working gas confirmed the possibility of obtaining qualitative homogeneous films using this magnetron sputtering device. Also the discharge modes were determined for this magnetron sputtering device, in which it was possible to obtain such energy and density of carbon atoms fluxes, which were suitable for deposition of carbon films containing carbon nanotubes and other nanoparticles.

  7. Negative Ion Sources: Magnetron and Penning

    CERN Document Server

    Faircloth, D.C.

    2013-12-16

    The history of the magnetron and Penning electrode geometry is briefly outlined. Plasma generation by electrical discharge-driven electron impact ionization is described and the basic physics of plasma and electrodes relevant to magnetron and Penning discharges are explained. Negative ions and their applications are introduced, along with their production mechanisms. Caesium and surface production of negative ions are detailed. Technical details of how to build magnetron and Penning surface plasma sources are given, along with examples of specific sources from around the world. Failure modes are listed and lifetimes compared.

  8. Negative Ion Sources: Magnetron and Penning

    International Nuclear Information System (INIS)

    Faircloth, D C

    2013-01-01

    The history of the magnetron and Penning electrode geometry is briefly outlined. Plasma generation by electrical discharge-driven electron impact ionization is described and the basic physics of plasma and electrodes relevant to magnetron and Penning discharges are explained. Negative ions and their applications are introduced, along with their production mechanisms. Caesium and surface production of negative ions are detailed. Technical details of how to build magnetron and Penning surface plasma sources are given, along with examples of specific sources from around the world. Failure modes are listed and lifetimes compared. (author)

  9. Phase and Frequency Locked Magnetrons for SRF Sources

    Energy Technology Data Exchange (ETDEWEB)

    Neubauer, Michael [Muons, Inc.; Johnson, Rolland

    2014-09-12

    the ferrite had not changed. A major problem that remains is to develop a ferrite material with low enough loss that it does not reduce the quality factor of the magnetron to an unacceptable level.

  10. Textured ZnO thin films by RF magnetron sputtering

    CERN Document Server

    Ginting, M; Kang, K H; Kim, S K; Yoon, K H; Park, I J; Song, J S

    1999-01-01

    Textured thin films ZnO has been successfully grown by rf magnetron sputtering method using a special technique of introducing a small amount of water and methanol on the deposition chamber. The grain size of the textured surface is highly dependent on the argon pressure during the deposition. The pressure in this experiment was varied from 50 mTorr down to 5 mTorr and the highest grain size of the film is obtained at 5 mTorr. The total transmittance of the films are more than 85% in the wavelength of 400 to 800 nm, and haze ratio of about 14% is obtained at 400 nm wavelength. Beside the textured surface, these films also have very low resistivity, which is lower than 1.4x10 sup - sup 3 OMEGA centre dot cm. X-ray analysis shows that the films with textured surface have four diffraction peaks on the direction of (110), (002), (101) and (112), while the non-textured films have only (110) and (002) peaks. Due to the excellent characteristics of this film, it will make the film very good TCO alternatives for the ...

  11. Microstructure of ZnO thin films deposited by high power impulse magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Reed, A.N., E-mail: amber.reed.5@us.af.mil [Materials and Manufacturing Directorate, Air Force Research Laboratory, 3005 Hobson Way, Wright Patterson Air Force Base, OH 45433 (United States); Department of Chemical and Materials Engineering, University of Dayton, Dayton, OH 45469 (United States); Shamberger, P.J. [Department of Materials Science and Engineering, Texas A& M University, College Station, TX 77843 (United States); Hu, J.J. [Materials and Manufacturing Directorate, Air Force Research Laboratory, 3005 Hobson Way, Wright Patterson Air Force Base, OH 45433 (United States); University of Dayton Research Institute, University of Dayton, Dayton, OH 45469 (United States); Muratore, C. [Department of Chemical and Materials Engineering, University of Dayton, Dayton, OH 45469 (United States); Bultman, J.E. [Materials and Manufacturing Directorate, Air Force Research Laboratory, 3005 Hobson Way, Wright Patterson Air Force Base, OH 45433 (United States); University of Dayton Research Institute, University of Dayton, Dayton, OH 45469 (United States); Voevodin, A.A., E-mail: andrey.voevodin@us.af.mil [Materials and Manufacturing Directorate, Air Force Research Laboratory, 3005 Hobson Way, Wright Patterson Air Force Base, OH 45433 (United States)

    2015-03-31

    High power impulse magnetron sputtering was used to deposit thin (~ 100 nm) zinc oxide (ZnO) films from a ceramic ZnO target onto substrates heated to 150 °C. The resulting films had strong crystallinity, highly aligned (002) texture and low surface roughness (root mean square roughness less than 10 nm), as determined by X-ray diffraction, transmission electron microscopy, scanning electron microscopy and atomic force spectroscopy measurements. Deposition pressure and target–substrate distance had the greatest effect on film microstructure. The degree of alignment in the films was strongly dependent on the gas pressure. Deposition at pressures less than 0.93 Pa resulted in a bimodal distribution of grain sizes. An initial growth layer with preferred orientations (101) and (002) parallel to the interface was observed at the film–substrate interface under all conditions examined here; the extent of that competitive region was dependent on growth conditions. Time-resolved current measurements of the target and ion energy distributions, determined using energy resolved mass spectrometry, were correlated to film microstructure in order to investigate the effect of plasma conditions on film nucleation and growth. - Highlights: • Low temperature growth of nanocrystalline zinc oxide (ZnO) films. • ZnO films had a highly (002) textured, smooth, dense microstructure. • Dominant (002) orientation of films was pressure dependent. • Interfacial (101)/(002) mixed orientation layer controlled by substrate location.

  12. Two new planar coil designs for a high pressure radio frequency plasma source

    Science.gov (United States)

    Munsat, T.; Hooke, W. M.; Bozeman, S. P.; Washburn, S.

    1995-04-01

    Two planar coil designs for a high pressure rf plasma source are investigated using spectroscopic techniques and circuit analysis. In an Ar plasma a truncated version of the commonly used ``spiral'' coil is found to produce improvements in peak electron density of 20% over the full version. A coil with figure-8 geometry is found to move plasma inhomogeneities off of center and produce electron densities comparable to the spiral coils. Both of these characteristics are advantageous in industrial applications. Coil design characteristics for favorable power coupling are also determined, including the necessity of closed hydrodynamic plasma loops and the drawback of closely situated antiparallel coil currents.

  13. Temporal evolution of electron energy distribution function and plasma parameters in the afterglow of drifting magnetron plasma

    International Nuclear Information System (INIS)

    Seo, Sang-Hun; In, Jung-Hwan; Chang, Hong-Young

    2005-01-01

    The temporal behaviour of the electron energy distribution function (EEDF) and the plasma parameters such as electron density, electron temperature and plasma and floating potentials in a mid-frequency pulsed dc magnetron plasma are investigated using time-resolved probe measurements. A negative-voltage dc pulse with an average power of 160 W during the pulse-on period, a repetition frequency of 20 kHz and a duty cycle of 50% is applied to the cathode of a planar unbalanced magnetron discharge with a grounded substrate. The measured electron energy distribution is found to exhibit a bi-Maxwellian distribution, which can be resolved with the low-energy electron group and the high-energy tail part during the pulse-on period, and a Maxwellian distribution only with low-energy electrons as a consequence of initially rapid decay of the high-energy tail part during the pulse-off period. This characteristic evolution of the EEDF is reflected in the decay characteristics of the electron density and temperature in the afterglow. These parameters exhibit twofold decay represented by two characteristic decay times of an initial fast decay time τ 1 , and a subsequent slower decay time τ 2 in the afterglow when approximated with a bi-exponential function. While the initial fast decay times are of the order of 1 μs (τ T1 ∼ 0.99 μs and τ N1 ∼ 1.5 μs), the slower decay times are of the order of a few tens of microseconds (τ T2 ∼ 7 μs and τ N2 ∼ 40 μs). The temporal evolution of the plasma parameters are qualitatively explained by considering the formation mechanism of the bi-Maxwellian electron distribution function and the electron transports of these electron groups in bulk plasma

  14. A microcontroller based tuning mechanism for the magnetron

    International Nuclear Information System (INIS)

    Khan, A.M.; Mahfooz, M.; Hanumaiah, B.; Ganesh; Siddappa, K.

    2006-01-01

    In this paper we report on a control system developed to tune the magnetron frequency to get the maximum beam pulse in the microtron (electron accelerator facility at Mangalore University). The control system so designed consists of a microcontroller, a phase locked loop (PLL) and a digital to analog converter (DAC) to control the magnetron frequency. The voltage value given by the microcontroller through the DAC decides the reference frequency. The PLL gives the error voltage whenever there is difference between the reference and the magnetron frequencies. The microcontroller unit tracks the error voltage and tunes the magnetron with the help of a tuner mechanism connected through a stepper motor. The microcontroller also monitors the beam current level and accordingly adjusts the reference frequency to successfully tune the magnetron. (author)

  15. A novel bonding method for fabrication of PET planar nanofluidic chip with low dimension loss and high bonding strength

    International Nuclear Information System (INIS)

    Yin, Zhifu; Zou, Helin; Sun, Lei; Xu, Shenbo; Qi, Liping

    2015-01-01

    Plastic planar nanofluidic chips are becoming increasingly important for biological and chemical applications. However, the majority of the present bonding methods for planar nanofluidic chips suffer from high dimension loss and low bonding strength. In this work, a novel thermal bonding technique based on O 2 plasma and ethanol treatment was proposed. With the assistance of O 2 plasma and ethanol, the PET (polyethylene terephthalate) planar nanofluidic chip can be bonded at a low bonding temperature of 50 °C. To increase the bonding rate and bonding strength, the O 2 plasma parameters and thermal bonding parameters were optimized during the bonding process. The tensile test indicates that the bonding strength of the PET planar nanofluidic chip can reach 0.954 MPa, while the auto-fluorescence test demonstrates that there is no leakage or blockage in any of the bonded micro- or nanochannels. (paper)

  16. Investigation of CaTiO3:Pr3+ thin films deposited by radiofrequency reactive magnetron sputtering for electroluminescence application

    International Nuclear Information System (INIS)

    Sarakha, L; Bousquet, A; Tomasella, E; Boutinaud, P; Mahiou, R

    2010-01-01

    In this report we successfully deposited thin films of CaTiO 3 :Pr 3+ by radiofrequency magnetron sputtering. The films were studied and we tried to understand the evolution of their optical and electrical properties. We noticed that the annealing temperature and the deposition pressures have an important influence on these properties. Thin films with good optical and electrical properties have been obtained. These films are transparent and are characterized by an intense red photoluminescence and a low fixed charge density. They are well dedicated for electroluminescence purposes.

  17. Combined optical emission and resonant absorption diagnostics of an Ar-O{sub 2}-Ce-reactive magnetron sputtering discharge

    Energy Technology Data Exchange (ETDEWEB)

    El Mel, A.A. [Chimie des Interactions Plasma-Surface (ChIPS), Research Institute for Materials Science and Engineering, Université de Mons, Place du Parc 23, Mons B-7000 (Belgium); Institut des Matériaux Jean Rouxel, Université de Nantes, CNRS, 2 rue de la Houssinière B.P. 32229, Nantes Cedex 3 44322 (France); Ershov, S. [Chimie des Interactions Plasma-Surface (ChIPS), Research Institute for Materials Science and Engineering, Université de Mons, Place du Parc 23, Mons B-7000 (Belgium); Britun, N., E-mail: nikolay.britun@umons.ac.be [Chimie des Interactions Plasma-Surface (ChIPS), Research Institute for Materials Science and Engineering, Université de Mons, Place du Parc 23, Mons B-7000 (Belgium); Ricard, A. [Université de Toulouse, UPS, INPT, LAPLACE (Laboratoire Plasma et Conversion d' Energie), 118 route de Narbonne, Toulouse Cedex 9 F-31062 (France); Konstantinidis, S. [Chimie des Interactions Plasma-Surface (ChIPS), Research Institute for Materials Science and Engineering, Université de Mons, Place du Parc 23, Mons B-7000 (Belgium); Snyders, R. [Chimie des Interactions Plasma-Surface (ChIPS), Research Institute for Materials Science and Engineering, Université de Mons, Place du Parc 23, Mons B-7000 (Belgium); Materia Nova Research Center, Parc Initialis, Avenue Copernic 1, Mons B-7000 (Belgium)

    2015-01-01

    We report the results on combined optical characterization of Ar-O{sub 2}-Ce magnetron sputtering discharges by optical emission and resonant absorption spectroscopy. In this study, a DC magnetron sputtering system equipped with a movable planar magnetron source with a Ce target is used. The intensities of Ar, O, and Ce emission lines, as well as the absolute densities of Ar metastable and Ce ground state atoms are analyzed as a function of the distance from the magnetron target, applied DC power, O{sub 2} content, etc. The absolute number density of the Ar{sup m} is found to decrease exponentially as a function of the target-to-substrate distance. The rate of this decrease is dependent on the sputtering regime, which should be due to the different collisional quenching rates of Ar{sup m} by O{sub 2} molecules at different oxygen contents. Quantitatively, the absolute number density of Ar{sup m} is found to be equal to ≈ 3 × 10{sup 8} cm{sup −3} in the metallic, and ≈ 5 × 10{sup 7} cm{sup −3} in the oxidized regime of sputtering, whereas Ce ground state densities at the similar conditions are found to be few times lower. The absolute densities of species are consistent with the corresponding deposition rates, which decrease sharply during the transition from metallic to poisoned sputtering regime. - Highlights: • Optical emission and resonant absorption spectroscopy are employed to study Ar-O{sub 2}-Ce magnetron sputtering discharges. • The density of argon metastables is found to decrease exponentially when increasing the target-to-substrate distance. • The collision-quenching rates of Ar{sup m} by O{sub 2} molecules at different oxygen contents is demonstrated. • The deposition rates of cerium and cerium oxide thin films decrease sharply during the transition from the metallic to the poisoned sputtering regime.

  18. Hybrid plasma system for magnetron deposition of coatings with ion assistance

    International Nuclear Information System (INIS)

    Vavilin, K V; Kralkina, E A; Nekludova, P A; Petrov, A. K; Nikonov, A M; Pavlov, V B; Airapetov, A A; Odinokov, V V; Pavlov, G Ya; Sologub, V A

    2016-01-01

    The results of the study of the plasma hybrid system based on the combined magnetron discharge and high-frequency inductive discharge located in the external magnetic field is presented. Magnetron discharge provides the generation of atoms and ions of the target materials while the flow of accelerated ions used for the ion assistance is provided by the RF inductive discharge. An external magnetic field is used to optimize the power input to the discharge, to increase the ion current density in the realm of substrate and to enhance the area of uniform plasma. The joint operation of magnetron and RF inductive discharge leads to a substantial increase (not equal to the sum of the parameters obtained under separate operation of two hybrid system channels) of the ion current density and intensity of sputtered material spectral lines radiation. Optimal mode of the hybrid plasma system operation provides uniform ion current density on the diameter of at least 150mm at 0.7PA argon pressure. The optimal values of the magnetic fields in the region of the substrate location lie in the range 2-8 mTl, while in the region of the RF input power unit lie in the range 0.5-25 mTl. (paper)

  19. CEERI-CAT joint venture for development of accelerator magnetrons

    International Nuclear Information System (INIS)

    Prasad, Sharda; Kaushik, S.C.; Mahesh Kumar; Chaudhary, P.; Shrivastava, Purushottam; Wanmode, Y.; Hannurkar, P.R.

    2003-01-01

    LINAC and Microtron systems for electron acceleration up to few tens of MeV, requires pulsed RF sources such as magnetron and klystron in S-Band frequency range with peak power in the range of few MW. The major emphasis under this program was to develop critical technologies involved in the development of 2 MW magnetron. This paper discusses the development of 2 MW magnetron along with critical technologies involved and test facilities developed by CAT for testing of this magnetron

  20. Endoscopic PIV measurements in a low pressure turbine rig

    Energy Technology Data Exchange (ETDEWEB)

    Kegalj, Martin; Schiffer, Heinz-Peter [Technische Universitaet Darmstadt (Germany). Department of Gas Turbines and Aerospace Propulsion

    2009-10-15

    Particle-Image-Velocimetry (PIV) is a useful way to acquire information about the flow in turbomachinery. Several premises have to be fulfilled to achieve high-quality data, for example, optical access, low vibrations and low reflections. However, not all test facilities comply with these requirements. If there is no optical access to the test area, measurements cannot be performed. The use of borescopic optics is a possible solution to this issue, as the access required is very small. Several different techniques can be used to measure the three components of the velocity vector, one of which is Stereo-PIV. These techniques require either large optical access from several viewing angles or highly complex setups. Orthogonal light sheet orientations in combination with borescopic optics using Planar-PIV can deliver sufficient information about the flow. This study will show the feasibility of such an approach in an enclosed test area, such as the interblade space in a Low-Pressure-Turbine-Rig. The results from PIV will be compared with data collected with conventional techniques, such as the Five-Hole-Probe and the 2-component Hot-Wire-Anemometry. An analysis of time- and phase-averaged data will be performed. (orig.)

  1. Recent operation of the FNAL magnetron H- ion source

    Science.gov (United States)

    Karns, P. R.; Bollinger, D. S.; Sosa, A.

    2017-08-01

    This paper will detail changes in the operational paradigm of the Fermi National Accelerator Laboratory (FNAL) magnetron H- ion source due to upgrades in the accelerator system. Prior to November of 2012 the H- ions for High Energy Physics (HEP) experiments were extracted at ˜18 keV vertically downward into a 90 degree bending magnet and accelerated through a Cockcroft-Walton accelerating column to 750 keV. Following the upgrade in the fall of 2012 the H- ions are now directly extracted from a magnetron at 35 keV and accelerated to 750 keV by a Radio Frequency Quadrupole (RFQ). This change in extraction energy as well as the orientation of the ion source required not only a redesign of the ion source, but an updated understanding of its operation at these new values. Discussed in detail are the changes to the ion source timing, arc discharge current, hydrogen gas pressure, and cesium delivery system that were needed to maintain consistent operation at >99% uptime for HEP, with an increased ion source lifetime of over 9 months.

  2. Adhesion Improvement and Characterization of Magnetron Sputter Deposited Bilayer Molybdenum Thin Films for Rear Contact Application in CIGS Solar Cells

    Directory of Open Access Journals (Sweden)

    Weimin Li

    2016-01-01

    Full Text Available Molybdenum (Mo thin films are widely used as rear electrodes in copper indium gallium diselenide (CIGS solar cells. The challenge in Mo deposition by magnetron sputtering lies in simultaneously achieving good adhesion to the substrates while retaining the electrical and optical properties. Bilayer Mo films, comprising five different thickness ratios of a high pressure (HP deposited bottom layer and a low pressure (LP deposited top layer, were deposited on 40 cm × 30 cm soda-lime glass substrates by DC magnetron sputtering. We focus on understanding the effects of the individual layer properties on the resulting bilayer Mo films, such as microstructure, surface morphology, and surface oxidation. We show that the thickness of the bottom HP Mo layer plays a major role in determining the micromechanical and physical properties of the bilayer Mo stack. Our studies reveal that a thicker HP Mo bottom layer not only improves the adhesion of the bilayer Mo, but also helps to improve the film crystallinity along the preferred [110] direction. However, the surface roughness and the porosity of the bilayer Mo films are found to increase with increasing bottom layer thickness, which leads to lower optical reflectance and a higher probability for oxidation at the Mo surface.

  3. Solid-state pulse modulator for a 1.7-MW X-band magnetron

    International Nuclear Information System (INIS)

    Choi, Jaegu; Shin, Yongmoon; Choi, Youngwook; Kim, Kwanho

    2014-01-01

    Medical linear accelerators (LINAC) for cancer treatment require pulse modulators to generate high-power pulses with a fast rise time, flat top and short duration to drive high-power magnetrons. Solid-state pulse modulators (SSPM) for medical LINACs that use high power semiconductor switches with high repetition rates, high stability and long lifetimes have been introduced to replace conventional linear-type pulse generators that use gaseous discharge switches. In this paper, the performance of a developed SSPM, which mainly consists of a capacitor charger, an insulated-gate bipolar transistor (IGBT) - capacitor stack and a pulse transformer, is evaluated with a dummy load and an X-band magnetron load. A theoretical analysis of the pulse transformer, which is a critical element of the SSPM, is carried out. The output pulse has a fast rise time and low droop, such that the modulator can drive the X-band magnetron.

  4. Deposition of the low resistive ITO-films by means of reactive magnetron sputtering of the In/Sn target on the cold substrate

    OpenAIRE

    Zhidik, Y. S.; Troyan, P. E.; Baturina, E. V.; Korzhenko, Dmitry Vladimirovich; Yuriev, Yuri Nikolaevich

    2016-01-01

    Detailed information on the deposition technology of the low-resistive ITO-films in oxygen-containing media by magnetron reactive sputtering from the In(90%)/Sn(10%) target on the cold substrate is given. Developed technology allows deposition ITO-films with sheet resistance transparency higher than 90%. Developed technology is notable for high reproducibility of results and is compatible with production technology of semiconductor devices of optoelectronics.

  5. Structural investigations of homoepitaxial Si films grown at low temperature by pulsed magnetron sputtering on Si(111) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Fenske, F. [Hahn-Meitner-Institut Berlin, Abt. Silizium-Photovoltaik, Kekulestr. 5, D-12485 Berlin (Germany)], E-mail: fenske@hmi.de; Schulze, S.; Hietschold, M. [Technische Universitaet Chemnitz, Analytik an Festkoerperoberflaechen, Reichenhainer Str. 70, D-09107 Chemnitz (Germany); Schmidbauer, M. [Institut fuer Kristallzuechtung Berlin, Max-Born-Str.2, D-12489 Berlin (Germany)

    2008-06-02

    Using pulsed magnetron sputtering at low substrate temperature (T{sub s} = 580 {sup o}C) the homoepitaxial growth on Si(111) was studied. The films were comprehensively characterized by cross-section transmission electron microscopy and various diffraction methods. Up to a film thickness of 1240 nm no breakdown of the epitaxial growth was observed. The surface microstructure, characterized by electron backscatter diffraction, exhibits exclusively crystalline structure with (111) orientation. Careful analysis of selected area electron diffraction patterns and high-resolution X-ray diffraction data clearly proves the existence of twinning/stacking faults in the {l_brace}111{r_brace} planes. Besides these defects - which are typical for low-temperature epitaxy - no additional significant defects related to the energetic particle bombardment by the sputter deposition method are observed.

  6. Structural investigations of homoepitaxial Si films grown at low temperature by pulsed magnetron sputtering on Si(111) substrates

    International Nuclear Information System (INIS)

    Fenske, F.; Schulze, S.; Hietschold, M.; Schmidbauer, M.

    2008-01-01

    Using pulsed magnetron sputtering at low substrate temperature (T s = 580 o C) the homoepitaxial growth on Si(111) was studied. The films were comprehensively characterized by cross-section transmission electron microscopy and various diffraction methods. Up to a film thickness of 1240 nm no breakdown of the epitaxial growth was observed. The surface microstructure, characterized by electron backscatter diffraction, exhibits exclusively crystalline structure with (111) orientation. Careful analysis of selected area electron diffraction patterns and high-resolution X-ray diffraction data clearly proves the existence of twinning/stacking faults in the {111} planes. Besides these defects - which are typical for low-temperature epitaxy - no additional significant defects related to the energetic particle bombardment by the sputter deposition method are observed

  7. Parallel-fed planar dipole antenna arrays for low-observable platforms

    CERN Document Server

    Singh, Hema; Jha, Rakesh Mohan

    2016-01-01

    This book focuses on determination of scattering of parallel-fed planar dipole arrays in terms of reflection and transmission coefficients at different levels of the array system. In aerospace vehicles, the phased arrays are often in planar configuration. The radar cross section (RCS) of the vehicle is mainly due to its structure and the antennas mounted over it. There can be situation when the signatures due to antennas dominate over the structural RCS of the platform. This necessitates the study towards the reduction and control of antenna/ array RCS. The planar dipole array is considered as a stacked linear dipole array. A systematic, step-by-step approach is used to determine the RCS pattern including the finite dimensions of dipole antenna elements. The mutual impedance between the dipole elements for planar configuration is determined. The scattering till second-level of couplers in parallel feed network is taken into account. The phase shifters are modelled as delay line. All the couplers in the feed n...

  8. Status and prospects of a compact FIR FEL driven by a magnetron-based microtron

    International Nuclear Information System (INIS)

    Jeong, Young Uk; Kazakevitch, Grigori M.; Lee, Byung Cheol; Kim, Sun Kook; Cho, Sung Oh; Gavrilov, Nicolai G.; Lee, Jongmin

    2002-01-01

    A magnetron-based microtron as a driver of FIR FEL has several prominent advantages in cost, size, beam quality and operation convenience. However, it has some disadvantages due to the instability of the RF frequency and a low current. In order to overcome these disadvantages, the frequency stability of the magnetron was improved, and the interaction between the electron beam and the FIR radiation was enhanced by using a high-performance undulator and a low-loss waveguide-mode optical resonator. The FEL is now under upgrade in order to extend the wavelength range to cover 90-300 μm, which can be done by increasing the energy range of electron beam to 4.3-7 MeV. In this paper, we report the results of investigations on output characteristics of the FEL depending on cavity detuning, electron beam matching, and RF instability. Based on the results, we discuss the prospects of wide-band FIR FELs driven by magnetron-based microtrons as potent sources of radiation for scientific applications

  9. Study on the preparation of boron-rich film by magnetron sputtering in oxygen atmosphere

    Energy Technology Data Exchange (ETDEWEB)

    Pan, Zhangmin; Yang, Yiming; Huang, Jian; Ren, Bing; Yu, Hongze; Xu, Run; Ji, Huanhuan; Wang, Lin; Wang, Linjun, E-mail: ljwang@shu.edu.cn

    2016-12-01

    Highlights: • Boron ({sup 10}B) oxide films were successfully grown using RF magnetron sputtering. • Effects of oxygen partial pressure on the property of the films were studied. • Substrates were covered with B-rich film and film surface was covered with B{sub 2}O{sub 3}. • The growth mechanism of films in oxygen atmosphere was analyzed using XPS. - Abstract: In this paper, the growth of boron ({sup 10}B) oxide films on (1 0 0) silicon substrate were achieved by radio frequency (r.f.) magnetron sputtering under the different oxygen partial pressure with a target of boron and boron oxide. The structure and properties of deposited films were characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy spectrometer (FTIR), X-ray photoelectron spectroscopy (XPS), respectively. The results showed that the substrate was covered with boron-rich films tightly and the surface of films was covered with B{sub 2}O{sub 3}. And the growth mechanism of boron-rich film in oxygen atmosphere was also analyzed.

  10. Deposition of the low resistive ITO-films by means of reactive magnetron sputtering of the In/Sn target on the cold substrate

    Science.gov (United States)

    Zhidik, Y. S.; Troyan, P. E.; Baturina, E. V.; Korzhenko, D. V.; Yurjev, Y. N.

    2016-06-01

    Detailed information on the deposition technology of the low-resistive ITO-films in oxygen-containing media by magnetron reactive sputtering from the In(90%)/Sn(10%) target on the cold substrate is given. Developed technology allows deposition ITO-films with sheet resistance 2-3 Ω/□, transparency higher than 90%. Developed technology is notable for high reproducibility of results and is compatible with production technology of semiconductor devices of optoelectronics.

  11. Modeling and experimental studies of a side band power re-injection locked magnetron

    Science.gov (United States)

    Ye, Wen-Jun; Zhang, Yi; Yuan, Ping; Zhu, Hua-Cheng; Huang, Ka-Ma; Yang, Yang

    2016-12-01

    A side band power re-injection locked (SBPRIL) magnetron is presented in this paper. A tuning stub is placed between the external injection locked (EIL) magnetron and the circulator. Side band power of the EIL magnetron is reflected back to the magnetron. The reflected side band power is reused and pulled back to the central frequency. A phase-locking model is developed from circuit theory to explain the process of reuse of side band power in SBPRIL magnetron. Theoretical analysis proves that the side band power is pulled back to the central frequency of the SBPRIL magnetron, then the amplitude of the RF voltage increases and the phase noise performance is improved. Particle-in-cell (PIC) simulation of a 10-vane continuous wave (CW) magnetron model is presented. Computer simulation predicts that the frequency spectrum’s peak of the SBPRIL magnetron has an increase of 3.25 dB compared with the free running magnetron. The phase noise performance at the side band offset reduces 12.05 dB for the SBPRIL magnetron. Besides, the SBPRIL magnetron experiment is presented. Experimental results show that the spectrum peak rises by 14.29% for SBPRIL magnetron compared with the free running magnetron. The phase noise reduces more than 25 dB at 45-kHz offset compared with the free running magnetron. Project supported by the National Basic Research Program of China (Grant No. 2013CB328902) and the National Natural Science Foundation of China (Grant No. 61501311).

  12. Direct current magnetron sputter-deposited ZnO thin films

    International Nuclear Information System (INIS)

    Hoon, Jian-Wei; Chan, Kah-Yoong; Krishnasamy, Jegenathan; Tou, Teck-Yong; Knipp, Dietmar

    2011-01-01

    Zinc oxide (ZnO) is a very promising electronic material for emerging transparent large-area electronic applications including thin-film sensors, transistors and solar cells. We fabricated ZnO thin films by employing direct current (DC) magnetron sputtering deposition technique. ZnO films with different thicknesses ranging from 150 nm to 750 nm were deposited on glass substrates. The deposition pressure and the substrate temperature were varied from 12 mTorr to 25 mTorr, and from room temperature to 450 deg. C, respectively. The influence of the film thickness, deposition pressure and the substrate temperature on structural and optical properties of the ZnO films was investigated using atomic force microscopy (AFM) and ultraviolet-visible (UV-Vis) spectrometer. The experimental results reveal that the film thickness, deposition pressure and the substrate temperature play significant role in the structural formation and the optical properties of the deposited ZnO thin films.

  13. Pulsed Power Generators For Two-section Lia Relativistic Magnetron Driver

    CERN Document Server

    Agafonov, A V; Pevchev, V P

    2004-01-01

    Two prototypes of pulsed power generators for a two-sectional LIA - specialized driver of a relativistic magnetron were constructed and tested. The driver for the double-sided powering of a relativistic magnetron consists of two identical sets of induction modules (two sections of LIA) with inner electrodes - vacuum adders connected to both sides of a coaxial magnetron. It provides the symmetric power flowing in a magnetron and a possibility of localising of the electron flow in magnetron interaction region. The first generator designed for a small-scale laboratory installation provides the output pulses of 100 ns in duration with voltage amplitude of 50 kV at repetition rate of 1 pps. The construction of the generator is based on the application of experimental capacitor banks designed as a pulse forming line with the next parameters: charging voltage - 80 kV, impedance - 1,7 Ohm, pulse duration - 80 ns at a matched load. The second generator was designed for 1 MV integrated LIA - magnetron system. It cons...

  14. Conformal, planarizing and bridging AZ5214-E layers deposited by a 'draping' technique on non-planar III V substrates

    Science.gov (United States)

    Eliás, P.; Strichovanec, P.; Kostic, I.; Novák, J.

    2006-12-01

    A draping technique was tested for the deposition of positive-tone AZ5214-E photo-resist layers on non-planar (1 0 0)-oriented III-V substrates, which had a variety of three-dimensional (3D) topographies micromachined in them that consisted, e.g., of mesa ridges confined to side facets with variable tilt, inverted pyramidal holes and stubs confined to perpendicular side facets. All objects were sharp-edged. In each draping experiment, an AZ5214-E sheet was (1) formed floating on the water surface, (2) lowered onto a non-planar substrate and (3) draped over it during drying to form either self-sustained, or conformal, or planarizing layers over the non-planar substrates. The draping process is based on the depression of the glass transition temperature Tg of AZ5214-E material induced by penetrant water molecules that interact with AZ5214-E. During the process, the molecules are initially trapped under an AZ5214-E sheet and then transported out through the sheet via permeation. The water-AZ5214-E interaction modifies the stiffness κ of the sheet. The magnitude of the effect depends on temperature T and on partial water vapour pressure difference p(T, P, κ): the net effect is that Tg = f(C(T, P), p(T, P, κ)) is lowered as the concentration C of water increases with T and p, where P is the permeability of the sheet. The interaction depressed the Tg of the sheets as low as or lower than 53 °C for 6 µm thick sheets. At room temperature T Tg, the sheet becomes rubbery and mouldable by adhesion and capillary forces. As a result, it can either contour or planarize the topography depending on its geometry and thickness of the sheet.

  15. Study of deposition rae coating of Ag thin films by magnetron sputtering

    International Nuclear Information System (INIS)

    Ghanati, M.; Zendehnam, A.

    2003-01-01

    Exact knowledge about deposition rate and its distribution and variation of them with respect to coating parameters (Gas pressure, Distance, discharge current,..) is very vital. In this experimental research coating of Ag thin films by magnetron sputtering have been carried out over Ar pressure range of 10 -2 -10 -1 mbar, and discharge current up to 1000 m.A, and distance between glass substrates to silver target (Cathode) was changed from 5 to 15 cm. The obtained results have been investigated by help of computer curve fitting, and these studies show a very good agreement for the conditions used in this work

  16. Low-pressure

    Energy Technology Data Exchange (ETDEWEB)

    Baker, Richard [Membrane Technology And Research, Inc., Newark, CA (United States); Kniep, Jay [Membrane Technology And Research, Inc., Newark, CA (United States); Hao, Pingjiao [Membrane Technology And Research, Inc., Newark, CA (United States); Chan, Chi Cheng [Membrane Technology And Research, Inc., Newark, CA (United States); Nguyen, Vincent [Membrane Technology And Research, Inc., Newark, CA (United States); Huang, Ivy [Membrane Technology And Research, Inc., Newark, CA (United States); Amo, Karl [Membrane Technology And Research, Inc., Newark, CA (United States); Freeman, Brice [Membrane Technology And Research, Inc., Newark, CA (United States); Fulton, Don [Membrane Technology And Research, Inc., Newark, CA (United States); Ly, Jennifer [Membrane Technology And Research, Inc., Newark, CA (United States); Lipscomb, Glenn [Membrane Technology And Research, Inc., Newark, CA (United States); Lou, Yuecun [Membrane Technology And Research, Inc., Newark, CA (United States); Gogar, Ravikumar [Membrane Technology And Research, Inc., Newark, CA (United States)

    2015-01-29

    This final technical progress report describes work conducted by Membrane Technology and Research, Inc. (MTR) for the Department of Energy (DOE NETL) on development of low-pressure membrane contactors for carbon dioxide (CO2) capture from power plant flue gas (award number DE-FE0007553). The work was conducted from October 1, 2011 through September 30, 2014. The overall goal of this three-year project was to build and operate a prototype 500 m2 low-pressure sweep membrane module specifically designed to separate CO2 from coal-fired power plant flue gas. MTR was assisted in this project by a research group at the University of Toledo, which contributed to the computational fluid dynamics (CFD) analysis of module design and process simulation. This report details the work conducted to develop a new type of membrane contactor specifically designed for the high-gas-flow, low-pressure, countercurrent sweep operation required for affordable membrane-based CO2 capture at coal power plants. Work for this project included module development and testing, design and assembly of a large membrane module test unit at MTR, CFD comparative analysis of cross-flow, countercurrent, and novel partial-countercurrent sweep membrane module designs, CFD analysis of membrane spacers, design and fabrication of a 500 m2 membrane module skid for field tests, a detailed performance and cost analysis of the MTR CO2 capture process with low-pressure sweep modules, and a process design analysis of a membrane-hybrid separation process for CO2 removal from coal-fired flue gas. Key results for each major task are discussed in the report.

  17. Development of new cylindrical magnetrons for industrial use

    International Nuclear Information System (INIS)

    Clayton, B.

    2000-09-01

    A number of alternative techniques were considered and tested with a view to the construction of a cylindrical sputtering device. This device was required to be capable of depositing tribological coatings inside approximately cylindrical substrates of diameters less than 100mm, in an industrial situation. A cylindrical magnetron device was designed, and constructed as a prototype, using a magnetic assembly inside a cylindrical target with outside diameter (o.d.) 40mm. Two alternative magnetic assemblies were tested, and found to have complimentary advantages. The magnetron characteristics of the device were tested, as were key properties (such as adhesion level and hardness) of the coatings deposited. In all cases good results were obtained. A 22mm o.d. device based on the same design was shown to operate, but with less satisfactory characteristics. In an attempt to improve the miniaturised design, the feasibility of gas cooling (rather than water cooling) the cylindrical magnetron was demonstrated. A system incorporating four 40mm o.d. cylindrical magnetrons was designed, constructed and briefly tested. This was intended to prove the feasibility of using a multi-magnetron system to reduce the cost to coat. Its dimensions and design were tailored to an industrially specified engine block. In use the plasma rings formed on the 40mm magnetron target surfaces during operation were found to be of unequal intensities, especially on the shorter magnetron design used in the four-fold system. In an attempt to tackle this problem, a finite element model of the magnetic field generated by the magnetic assembly was built, run and verified. Changes were made to this model, and a new .magnet assembly was built and tested based on the results obtained. This did not lead to a final solution of the problem, but has set bounds within which the solution must lie. (author)

  18. Inverted relativistic magnetron with a single axial output

    International Nuclear Information System (INIS)

    Ballard, W.P.; Earley, L.M.; Wharton, C.B.

    1986-01-01

    A twelve vane, 1 MV, S-band magnetron has been designed and tested. An inverted design was selected to minimize the parasitic axial electron losses. The stainless steel anode is approximately one wavelength long. One end is partially short-circuited to rf, while the other end has a mode transformer to couple the 3.16 GHz π-mode out into a TM 01 circular waveguide. The magnetron has a loaded output Q of about 100. Operation at 1 MV, 0.31 T, 5 kA routinely produces approx.150 MW peak rms and 100 MW average rms with pulse lengths adjustable from 5 to 70 ns. The microwave power pulse has a rise time of approx.2 ns. The output power is diagnosed using four methods: calorimetry, two circular-waveguide directional couplers installed on the magnetron, two transmitting-receiving systems, and gaseous breakdown. Operation at other voltages and magnetic fields shows that the oscillation frequency is somewhat dependent on the magnetron current. Frequency changes of approx.20 MHz/kA occur as the operating conditions are varied. A series of experiments varying the anode conductivity, the electron emission profile, and the output coupling transformer design showed that none of these significantly increased the output power. Therefore, we have concluded that this magnetron operates in saturation. Because of the anode lifetime and repeatability, this magnetron has the potential to be repetitively pulsed. 36 refs., 16 figs

  19. Effects of oxygen addition in reactive cluster beam deposition of tungsten by magnetron sputtering with gas aggregation

    Energy Technology Data Exchange (ETDEWEB)

    Polášek, J., E-mail: xpolasekj@seznam.cz [Department of Surface and Plasma Science, Faculty of Mathematics and Physic, Charles University, V Holešovičkách 2, Prague 8, CZ-18000 (Czech Republic); Mašek, K. [Department of Surface and Plasma Science, Faculty of Mathematics and Physic, Charles University, V Holešovičkách 2, Prague 8, CZ-18000 (Czech Republic); Marek, A.; Vyskočil, J. [HVM Plasma Ltd., Na Hutmance 2, Prague 5, CZ-158 00 (Czech Republic)

    2015-09-30

    In this work, we investigated the possibilities of tungsten and tungsten oxide nanoclusters generation by means of non-reactive and reactive magnetron sputtering with gas aggregation. It was found that in pure argon atmosphere, cluster aggregation proceeded in two regimes depending on argon pressure in the aggregation chamber. At the lower pressure, cluster generation was dominated by two-body collisions yielding larger clusters (about 5.5 nm in diameter) at lower rate. At higher pressures, cluster generation was dominated by three-body collisions yielding smaller clusters (3–4 nm in diameter) at higher rate. The small amount of oxygen admixture in the aggregation chamber had considerable influence on cluster aggregation process. At certain critical pressure, the presence of oxygen led to the raise of deposition rate and cluster size. Resulting clusters were composed mostly of tungsten trioxide. The oxygen pressure higher than critical led to the target poisoning and the decrease in the sputtering rate. Critical oxygen pressure decreased with increasing argon pressure, suggesting that cluster aggregation process was influenced by atomic oxygen species (namely, O{sup −} ion) generated by oxygen–argon collisions in the magnetron plasma. - Highlights: • Formation of tungsten and tungsten oxide clusters was observed. • Two modes of cluster aggregation in pure argon atmosphere were found. • Dependence of cluster deposition speed and size on oxygen admixture was observed. • Changes of dependence on oxygen with changing argon pressure were described.

  20. Effects of oxygen addition in reactive cluster beam deposition of tungsten by magnetron sputtering with gas aggregation

    International Nuclear Information System (INIS)

    Polášek, J.; Mašek, K.; Marek, A.; Vyskočil, J.

    2015-01-01

    In this work, we investigated the possibilities of tungsten and tungsten oxide nanoclusters generation by means of non-reactive and reactive magnetron sputtering with gas aggregation. It was found that in pure argon atmosphere, cluster aggregation proceeded in two regimes depending on argon pressure in the aggregation chamber. At the lower pressure, cluster generation was dominated by two-body collisions yielding larger clusters (about 5.5 nm in diameter) at lower rate. At higher pressures, cluster generation was dominated by three-body collisions yielding smaller clusters (3–4 nm in diameter) at higher rate. The small amount of oxygen admixture in the aggregation chamber had considerable influence on cluster aggregation process. At certain critical pressure, the presence of oxygen led to the raise of deposition rate and cluster size. Resulting clusters were composed mostly of tungsten trioxide. The oxygen pressure higher than critical led to the target poisoning and the decrease in the sputtering rate. Critical oxygen pressure decreased with increasing argon pressure, suggesting that cluster aggregation process was influenced by atomic oxygen species (namely, O"− ion) generated by oxygen–argon collisions in the magnetron plasma. - Highlights: • Formation of tungsten and tungsten oxide clusters was observed. • Two modes of cluster aggregation in pure argon atmosphere were found. • Dependence of cluster deposition speed and size on oxygen admixture was observed. • Changes of dependence on oxygen with changing argon pressure were described.

  1. Tuning Range Optimization of a Planar Inverted F Antenna for LTE Low Frequency Bands

    DEFF Research Database (Denmark)

    Barrio, Samantha Caporal Del; Pelosi, Mauro; Franek, Ondrej

    2011-01-01

    This paper presents a Planar Inverted F Antenna (PIFA) tuned with a fixed capacitor to the low frequency bands supported by the Long Term Evolution (LTE) technology. The tuning range is investigated and optimized with respect to the bandwidth and the efficiency of the resulting antenna. Simulatio...... and mock-ups are presented....

  2. Combinatorial study of low-refractive Mg-F-Si-O nano-composites deposited by magnetron co-sputtering from compound targets

    Science.gov (United States)

    Mertin, Stefan; Länzlinger, Tony; Sandu, Cosmin S.; Scartezzini, Jean-Louis; Muralt, Paul

    2018-03-01

    Deposition of nano-composite Mg-F-Si-O films on optical grade silica glass was studied employing RF magnetron co-sputtering from magnesium fluoride (MgF2) and fused silica (SiO2) targets. The aim was to obtain a stable and reliable sputtering process for optical coatings exhibiting a refractive index lower than the one of quartz glass (1.46 at 550 nm) without adding gaseous fluorine to the deposition process. The two magnetrons were installed in a confocal way at 45° off-axis with respect to a static substrate, thus creating a lateral gradient in the thin-film composition. The deposited Mg-F-Si-O coatings were structurally analysed by electron dispersive X-ray spectroscopy (EDX), transmission electron microscopy (TEM) and scanning electron microscopy (SEM). The obtained films consist of MgF2 nanocrystals embedded in a SiO2-rich amorphous matrix. Spectroscopic ellipsometry and spectrophotometry measurements showed that they are highly transparent exhibiting a very-low extinction coefficient k and a refractive index n in the desired range between the one of MgF2 (1.38) and SiO2 (1.46). Films with n = 1.424 and 1.435 at 550 nm were accomplished with absorption below the detection threshold.

  3. Molybdenum thin film deposited by in-line DC magnetron sputtering as a back contact for Cu(In,Ga)Se{sub 2} solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Li Zhaohui; Cho, Eou-Sik [Department of Electronics Engineering, Kyungwon University, San 65, Bokjung-dong, Soojung-gu, Seongnam city, Kyunggi-do, 461-701 (Korea, Republic of); Kwon, Sang Jik, E-mail: sjkwon@kyungwon.ac.kr [Department of Electronics Engineering, Kyungwon University, San 65, Bokjung-dong, Soojung-gu, Seongnam city, Kyunggi-do, 461-701 (Korea, Republic of)

    2011-09-01

    In this paper, we reported the effect of the power and the working pressure on the molybdenum (Mo) films deposited using an in-line direct current (DC) magnetron sputtering system. The electrical and the structural properties of Mo film were improved by increasing DC power from 1 to 3 kW. On the other side, the resistivity of the Mo films became higher with the increasing working pressure. However, the adhesion property was improved when the working pressure was higher. In this work, in order to obtain an optimal Mo film as a back metal contact of Cu(In,Ga)Se{sub 2} (CIGS) solar cells, a bilayer Mo film was formed through the different film structures depending on the working pressure. The first layer was formed at a high pressure of 12 mTorr for a better adhesion and the second layer was formed at a low pressure of 3 mTorr for a lower resistivity.

  4. Surface functionalization of nanostructured LaB{sub 6}-coated Poly Trilobal fabric by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Yan, E-mail: wuyanchn@hotmail.com [Mechanical and Electrical Engineering Branch, Jiaxing Nanyang Polytechnic Institute, Jiaxing 314003 (China); Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), Shandong University, Jinan 250061 (China); Zhang, Lin, E-mail: zhanglin2007@sdu.edu.cn [Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), Shandong University, Jinan 250061 (China); Min, Guanghui, E-mail: ghmin@sdu.edu.cn [Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), Shandong University, Jinan 250061 (China); Yu, Huashun; Gao, Binghuan; Liu, Huihui; Xing, Shilong; Pang, Tao [Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), Shandong University, Jinan 250061 (China)

    2016-10-30

    Highlights: • Nanostructured LaB{sub 6} films were deposited on flexible textile substrates by dc magnetron sputtering. • The pronounced influence of the working pressure on the morphologies and optical properties of LaB{sub 6} films has been revealed. • The concept of Ultraviolet Protection Factor (UPF) was employed and LaB{sub 6}-coated PET textiles with ultraviolet protection ability were obtained. - Abstract: Nanostructured LaB{sub 6} films were deposited on flexible Poly Trilobal substrates (PET textiles) through direct current magnetron sputtering in order to broaden its applications and realize surface functionalization of polyester fabrics. Characterizations and performances were investigated by employing a scanning electron microscope (SEM), Fourier transformation infrared spectroscopy (FT-IR) and ultraviolet-visible (UV–vis) spectrophotometer. Ultraviolet Protection Factor (UPF) conducted by the integral conversion was employed to measure the ultraviolet protection ability. As expected, the growth of LaB{sub 6} film depending on the pressure variation enhanced UV-blocking ability (UPF rating at 30.17) and absorption intensity of the textiles.

  5. A PLL based automated magnetron tuning mechanism for electron accelerators

    International Nuclear Information System (INIS)

    Khan, A M; Mahfooz, Mohammed; Sanjeev, Ganesh

    2008-01-01

    In this paper we report on a control system developed to tune the magnetron frequency to get the maximum beam pulse in a Microtron (an electron accelerator facility at Mangalore University). The control system so designed consists of a Microcontroller Unit (MCU), a Phase Locked Loop (PLL) and a Digital to Analog Converter (DAC) to track and tune the magnetron frequency. A PLL is used to track the deviation of the magnetron output frequency, and by monitoring the reflected wave voltage level, the microcontroller unit tunes the magnetron with the help of a tuner mechanism connected through a stepper motor.

  6. A PLL based automated magnetron tuning mechanism for electron accelerators

    Energy Technology Data Exchange (ETDEWEB)

    Khan, A M; Mahfooz, Mohammed [Dept. of Electronics, Mangalore University, Mangalagangotri, Karnataka State, India - 574 199 (India); Sanjeev, Ganesh [Microtron Centre, Mangalore University, Mangalagangotri, Karnataka State, India - 574 199 (India)], E-mail: mahfooz_81@yahoo.com

    2008-09-15

    In this paper we report on a control system developed to tune the magnetron frequency to get the maximum beam pulse in a Microtron (an electron accelerator facility at Mangalore University). The control system so designed consists of a Microcontroller Unit (MCU), a Phase Locked Loop (PLL) and a Digital to Analog Converter (DAC) to track and tune the magnetron frequency. A PLL is used to track the deviation of the magnetron output frequency, and by monitoring the reflected wave voltage level, the microcontroller unit tunes the magnetron with the help of a tuner mechanism connected through a stepper motor.

  7. Role of technetium-99m planar bone scanning in the evaluation of low back pain

    International Nuclear Information System (INIS)

    Valdez, D.C.; Johnson, R.G.

    1994-01-01

    The records of 1018 patients with low back pain in a tertiary spine referral practice were reviewed. One hundred thirty-nine out of 1018 (13.6%) underwent technetium-99m planar bone scannings as part of their investigation. Seventy-three out of 139 scans (52%) showed increased uptake in some area, but only 27 out of 139 (19.4%) showed increased uptake specifically in the low back. Scans consistently yielded no findings with reference to the back when the prescan diagnosis was spinal stenosis, lumbar pain syndrome, herniated nucleus pulposus, or postlaminectomy syndrome. Some scans gave positive findings in patients with a diagnosis of degenerative disc disease, pseudoarthrosis, spondylolisthesis, fracture, infection, metabolic disorder, or tumor. Positive scans were generally obtained early after presentation (within 3 months) and negative scans obtained later (after 6 months), suggesting that clinical suspicion is still the main indication for early scanning. Planar bone scanning was helpful in both diagnosis and therapeutic decision-making in many conditions. (orig.)

  8. Reactive dual magnetron sputtering for large area application

    International Nuclear Information System (INIS)

    Struempfel, J.

    2002-01-01

    Production lines for large area coating demand high productivity of reactive magnetron sputtering processes. Increased dynamic deposition rates for oxides and nitrides were already obtained by using of highly powered magnetrons in combination with advanced sputter techniques. However, besides high deposition rates the uniformity of such coatings has to be carefully considered. First the basics of reactive sputtering processes and dual magnetron sputtering are summarized. Different methods for process stabilization and control are commonly used for reactive sputtering. The Plasma Emission Monitor (PE M) offers the prerequisite for fast acting process control derived from the in-situ intensity measurements of a spectral line of the sputtered target material. Combined by multiple Plasma Emission Monitor control loops segmented gas manifolds are able to provide excellent thin film uniformity at high deposition rates. The Dual Magnetron allows a broad range of processing by different power supply modes. Medium frequency, DC and pulsed DC power supplies can be used for high quality layers. Whereas the large area coating of highly isolating layers like TiO 2 or SiO 2 is dominated by MF sputtering best results for coating with transparent conductive oxides are obtained by dual DC powering of the dual magnetron arrangement. (Author)

  9. DC Magnetron sputtering of Y-Ba-Cu-O thin films

    International Nuclear Information System (INIS)

    Larsson, Gunnar.

    1990-01-01

    I have been studying dc magnetron sputtering of thin film YBa 2 Cu 3 O 6+x , one of the recently discovered high- temperatures superconductors. In the introduction a brief review of the subjects sputtering and superconductivity is given. Since partial pressure measurements, especially for oxygen, have been important in the work I include a short description of the operating principles of mass spectroscopy. Experimental results in addition to what is given in the papers concerning plasma are presented in an appendix at the end of the introduction. (au)

  10. Room temperature growth of nanocrystalline anatase TiO2 thin films by dc magnetron sputtering

    International Nuclear Information System (INIS)

    Singh, Preetam; Kaur, Davinder

    2010-01-01

    We report, the structural and optical properties of nanocrystalline anatase TiO 2 thin films grown on glass substrate by dc magnetron sputtering at room temperature. The influence of sputtering power and pressure over crystallinity and surface morphology of the films were investigated. It was observed that increase in sputtering power activates the TiO 2 film growth from relative lower surface free energy to higher surface free energy. XRD pattern revealed the change in preferred orientation from (1 0 1) to (0 0 4) with increase in sputtering power, which is accounted for different surface energy associated with different planes. Microstructure of the films also changes from cauliflower type to columnar type structures with increase in sputtering power. FESEM images of films grown at low pressure and low sputtering power showed typical cauliflower like structure. The optical measurement revealed the systematic variation of the optical constants with deposition parameters. The films are highly transparent with transmission higher than 90% with sharp ultraviolet cut off. The transmittance of these films was found to be influenced by the surface roughness and film thickness. The optical band gap was found to decrease with increase in the sputtering power and pressure. The refractive index of the films was found to vary in the range of 2.50-2.24 with increase in sputtering pressure or sputtering power, resulting in the possibility of producing TiO 2 films for device applications with different refractive index, by changing the deposition parameters.

  11. A low hydraulic capacitance pressure sensor for integration with a micro viscosity detector

    NARCIS (Netherlands)

    van der Heyden, F.H.J.; Blom, M.T.; Gardeniers, Johannes G.E.; Chmela, E.; Elwenspoek, Michael Curt; Tijssen, R.P; van den Berg, Albert

    2003-01-01

    A design is presented for a micromachined differential viscometer, that is suitable for integration into a planar hydrodynamic chromatography system (HDC) for polymer analysis. The viscometer consists of four equal flow restrictions and two pressure sensors, connected in a Wheatstone bridge

  12. The microstructure and properties of titanium dioxide films synthesized by unbalanced magnetron sputtering

    International Nuclear Information System (INIS)

    Leng, Y.X.; Chen, J.Y.; Yang, P.; Sun, H.; Huang, N.

    2007-01-01

    In this work, titanium oxide films were deposited on Ti6Al4V and Si (1 0 0) by DC unbalanced magnetron sputtering method at different oxygen pressure. X-ray diffraction (XRD), microhardness tests, pin-on-disk wear experiments, surface contact angle tests and platelet adhesion investigation were conducted to evaluate the properties of the films. The corrosion behavior of titanium dioxide films was characterized by potentiodynamic polarization. The results showed that titanium oxide films deposited by unbalance magnetron sputtering were compact and could obviously enhance microhardness, wear resistance of titanium alloy substrate. Potentiodynamic polarization curves showed that Ti-6Al-4V deposited with titanium dioxide films had lower dissolution currents than that of the uncoated one. The results of in vitro hemocompatibility analyses indicated that the blood compatibility of the titanium dioxide films with bandgap 3.2 eV have better blood compatibility

  13. Experimental investigation on photoelectric properties of ZAO thin film deposited on flexible substrate by magnetron sputtering

    Science.gov (United States)

    Hao, Ming; Liu, Kun; Liu, Xinghua; Wang, Dongyang; Ba, Dechun; Xie, Yuanhua; Du, Guangyu; Ba, Yaoshuai

    2016-12-01

    Transparent conductive ZAO (Zinc Aluminum Oxide) films on flexible substrates have a great potential for low-cost mass-production solar cells. ZAO thin films were achieved on flexible PET (polyethylene terephthalate) substrates by RF magnetron sputtering technology. The surface morphology and element content, the transmittance and the sheet resistance of the films were measured to determine the optical process parameters. The results show that the ZAO thin film shows the best parameters in terms of photoelectric performance including sputtering power, working pressure, sputtering time, substrate temperature (100 W, 1.5 Pa, 60 min, 125 °C). The sheet resistance of 510 Ω and transmittance in visible region of 92% were obtained after characterization. Surface morphology was uniform and compact with a good crystal grain.

  14. Study of Ni2-Mn-Ga phase formation by magnetron sputtering film deposition at low temperature onto Si substrates and LaNiO3/Pb(Ti,Zr)O3 buffer

    International Nuclear Information System (INIS)

    Figueiras, F.; Rauwel, E.; Amaral, V. S.; Vyshatko, N.; Kholkin, A. L.; Soyer, C.; Remiens, D.; Shvartsman, V. V.; Borisov, P.; Kleemann, W.

    2010-01-01

    Film deposition of Ni 2 MnGa phaselike alloy by radio frequency (rf) magnetron sputtering was performed onto bare Si(100) substrates and LaNiO 3 /Pb(Ti,Zr)O 3 (LNO/PZT) ferroelectric buffer layer near room temperature. The prepared samples were characterized using conventional x-ray diffraction (XRD), superconducting quantum interference device, and electron dispersive x-ray spectroscopy from scanning electron microscope observations. The optimized films deposited under high rf power and low argon pressure present good surface quality and highly textured phase crystallization. The positioning distance between the substrate and the target-holder axis has some limited effect on the film's composition due to the specific diffusion behavior of each element in the sputtering plasma. Extended four pole high resolution XRD analysis allowed one to discriminate the intended Ni-Mn-Ga tetragonal martensitic phase induced by the (100) LNO/PZT oriented buffer. This low temperature process appears to be very promising, allowing separate control of the functional layer's properties, while trying to achieve high electromagnetoelastic coupling.

  15. High temperature superconducting films by rf magnetron sputtering

    International Nuclear Information System (INIS)

    Kadin, A.M.; Ballentine, P.H.

    1989-01-01

    The authors have produced sputtered films of Y-Ba-Cu-O and Bi-Sr-Ca-Cu-O by rf magnetron sputtering from an oxide target consisting of loose reacted powder. The use of a large 8-inch stoichiometric target in the magnetron mode permits films located above the central region to be free of negative-ion resputtering effects, and hence yields reproducible, uniform stoichiometric compositions for a wide range of substrate temperatures. Superconducting YBCO films have been obtained either by sputtering at low temperatures followed by an 850 0 C oxygen anneal, or alternatively by depositing onto substrates heated to ∼600 - 650 0 C and cooling in oxygen. Films prepared by the former method on cubic zirconia substrate consist of randomly oriented crystallites with zero resistance above 83 K. Those deposited on zirconia at medium temperatures without the high-temperature anneal contain smooth partially oriented crystallites, with a slightly depressed T/sub c/ ∼75K. Finally, superconducting films have been deposited on MgO using a BiSrCaCu/sub 2/O/sub x/ powder target

  16. Low-Cost Planar MM-Wave Phased Array Antenna for Use in Mobile Satellite (MSAT) Platforms

    DEFF Research Database (Denmark)

    Ojaroudiparchin, Naser; Shen, Ming; Pedersen, Gert F.

    2015-01-01

    In this paper, a compact 8×8 phased array antenna for mobile satellite (MSAT) devices is designed and investigated. 64-elements of 22 GHz patch antennas with coaxial-probe feeds have been used for the proposed planar design. The antenna is designed on a low-cost FR4 substrate with thickness, diel...

  17. Methods of Phase and Power Control in Magnetron Transmitters for Superconducting Accelerators

    Energy Technology Data Exchange (ETDEWEB)

    Kazadevich, G. [MUONS Inc., Batavia; Johnson, R. [MUONS Inc., Batavia; Neubauer, M. [MUONS Inc., Batavia; Lebedev, V. [Fermilab; Schappert, W. [Fermilab; Yakovlev, V. [Fermilab

    2017-05-01

    Various methods of phase and power control in magnetron RF sources of superconducting accelerators intended for ADS-class projects were recently developed and studied with conventional 2.45 GHz, 1 kW, CW magnetrons operating in pulsed and CW regimes. Magnetron transmitters excited by a resonant (injection-locking) phasemodulated signal can provide phase and power control with the rates required for precise stabilization of phase and amplitude of the accelerating field in Superconducting RF (SRF) cavities of the intensity-frontier accelerators. An innovative technique that can significantly increase the magnetron transmitter efficiency at the widerange power control required for superconducting accelerators was developed and verified with the 2.45 GHz magnetrons operating in CW and pulsed regimes. High efficiency magnetron transmitters of this type can significantly reduce the capital and operation costs of the ADSclass accelerator projects.

  18. Efficacy of SPECT over planar bone scan in the diagnosis of solitary vertebral lesions in patients with low back pain

    International Nuclear Information System (INIS)

    Sudhakar, Pushpalatha; Bhushan, Shanti M.; Ranadhir, G.; Prabhakar Rao, V.V.S.; Sharma, Anshu Rajnish; Narsimuhulu, G.

    2010-01-01

    The purpose of our study has been to evaluate the efficacy of single photon emission computed tomography (SPECT) over planar bone scan in identifying solitary vertebral lesions in patients with low backache and its ability to differentiate various pathologies according to the uptake pattern. Materials and Methods: The study included twenty patients out of whom six patients presented with known carcinoma and fourteen patients with low back pain. SPECT was done in all following planar skeletal survey. Benign and malignant lesions were identified according to the uptake pattern in vertebral elements, based on Gary F. Gates observations. Final diagnosis was obtained by means of biopsy or correlation with radiograph or computed tomography (CT) or magnetic resonance imaging (MRI), and/or follow up. Results: SPECT detected additional 30% of solitary vertebral lesions that were obscured on planar scan. Seven out of twenty were localized in anterior vertebral body and were diagnosed as benign ostophytes in six and osteoma in one substantiating the previous observations. Out of six cases of known carcinoma, three were having solitary metastases and showed posterior vertebral body uptake with pedicle involvement. SPECT could localize specific lesions as source of pain in eleven patients with low back pain (78%) and identified various etiologies including benign tumors (osteoid osteoma and osteoma), facet arthritis, discitis, transverse process fractures and spondylolysis. Conclusion: Our study highlighted the higher diagnostic value of SPECT over planar skeletal scintigraphy in localizing solitary vertebral lesions in low backache patients. Based on SPECT pattern, malignant and benign lesions could be differentiated in the given clinical context. (author)

  19. Deposition of nanostructured fluorocarbon plasma polymer films by RF magnetron sputtering of polytetrafluoroethylene

    Energy Technology Data Exchange (ETDEWEB)

    Kylian, Ondrej, E-mail: ondrej.kylian@gmail.com; Drabik, Martin; Polonskyi, Oleksandr; Cechvala, Juraj; Artemenko, Anna; Gordeev, Ivan; Choukourov, Andrei; Matolinova, Iva; Slavinska, Danka; Biederman, Hynek, E-mail: bieder@kmf.troja.mff.cuni.cz

    2011-07-29

    The RF magnetron sputtering of polytetrafluoroethylene target is studied with the aim to find out conditions leading to the deposition of super-hydrophobic thin films. It is shown that such coatings can be prepared at elevated pressures and a longer distance between the sputtered target and the substrate. This is explained by an increase in the density of longer C{sub x}F{sub y} molecules that reach the substrate and a lower flux of ions and CF{sub 2} radicals on the surface of growing film under such deposition conditions, as observed by optical emission spectroscopy and mass spectrometry. Such changes in plasma composition result in a deposition of rough films having F/C ratio close to 2 as observed by scanning electron microscopy and X-ray photoelectron spectroscopy, respectively. These findings clearly distinguish our results from the previous investigations of polytetrafluoroethylene sputtering performed at shorter distances from the target, where either low F/C ratio or low roughness of the deposited films did not allow reaching super-hydrophobic character of the coatings.

  20. Evaluation of planarization performance for a novel alkaline copper slurry under a low abrasive concentration

    International Nuclear Information System (INIS)

    Jiang Mengting; Liu Yuling; Yuan Haobo; Chen Guodong; Liu Weijuan

    2014-01-01

    A novel alkaline copper slurry that possesses a relatively high planarization performance is investigated under a low abrasive concentration. Based on the action mechanism of CMP, the feasibility of using one type of slurry in copper bulk elimination process and residual copper elimination process, with different process parameters, was analyzed. In addition, we investigated the regular change of abrasive concentration effect on copper and tantalum removal rate and within wafer non-uniformity (WIWNU) in CMP process. When the abrasive concentration is 3 wt%, in bulk elimination process, the copper removal rate achieves 6125 Å/min, while WIWNU is 3.5%, simultaneously. In residual copper elimination process, the copper removal rate is approximately 2700 Å/min, while WIWNU is 2.8%. Nevertheless, the tantalum removal rate is 0 Å/min, which indicates that barrier layer isn't eliminated in residual copper elimination process. The planarization experimental results show that an excellent planarization performance is obtained with a relatively high copper removal rate in bulk elimination process. Meanwhile, after residual copper elimination process, the dishing value increased inconspicuously, in a controllable range, and the wafer surface roughness is only 0.326 nm (sq < 1 nm) after polishing. By comparison, the planarization performance and surface quality of alkaline slurry show almost no major differences with two kinds of commercial acid slurries after polishing. All experimental results are conducive to research and improvement of alkaline slurry in the future. (semiconductor technology)

  1. Comparative study of niobium nitride coatings deposited by unbalanced and balanced magnetron sputtering

    International Nuclear Information System (INIS)

    Olaya, J.J.; Rodil, S.E.; Muhl, S.

    2008-01-01

    Niobium nitride (NbN) coatings have many interesting properties such as chemical inertness, excellent mechanical properties, high electrical conductivity, high melting point, and a superconducting transition temperature between 16 and 17 K. For this reason, these compounds have many potential thin film applications. In this work we compare the properties of NbN x films deposited using well-characterized balanced and unbalanced magnetron sputtering systems. Samples of NbN were deposited in the two systems under almost identical deposition conditions, that is, the same substrate temperature, plasma power, gas pressure, substrate to target distance and Ar/N 2 ratio. Prior to the film preparation both the magnetic field geometry and the characteristics of the plasma were determined. The microstructure and composition of the deposits were analyzed by X-ray diffraction, scanning electron microscopy and X-ray photoelectron spectroscopy. The corrosion resistance and the micro-abrasion wear resistance were measured by anodic polarization potentiodynamic studies and by ball cratering, respectively. The NbN films grown using the highly unbalanced magnetron configuration had a preferential (111) crystal orientation and a composite hardness of up to 2400 HV 0.025 . While the films deposited using the balanced magnetron had a mixed crystalline orientation and a hardness of 2000 HV 0.025 . The results demonstrate the strong effect of magnetic field configuration on the ion bombardment, and the resultant coating characteristics

  2. Comparative study of niobium nitride coatings deposited by unbalanced and balanced magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Olaya, J.J. [Departamento de Ingenieria Mecanica y Mecatronica, Universidad Nacional de Colombia, Bogota Colombia (Colombia); Rodil, S.E. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Mexico D. F. 04510 (Mexico); Muhl, S. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Mexico D. F. 04510 (Mexico)], E-mail: muhl@servidor.unam.mx

    2008-10-01

    Niobium nitride (NbN) coatings have many interesting properties such as chemical inertness, excellent mechanical properties, high electrical conductivity, high melting point, and a superconducting transition temperature between 16 and 17 K. For this reason, these compounds have many potential thin film applications. In this work we compare the properties of NbN{sub x} films deposited using well-characterized balanced and unbalanced magnetron sputtering systems. Samples of NbN were deposited in the two systems under almost identical deposition conditions, that is, the same substrate temperature, plasma power, gas pressure, substrate to target distance and Ar/N{sub 2} ratio. Prior to the film preparation both the magnetic field geometry and the characteristics of the plasma were determined. The microstructure and composition of the deposits were analyzed by X-ray diffraction, scanning electron microscopy and X-ray photoelectron spectroscopy. The corrosion resistance and the micro-abrasion wear resistance were measured by anodic polarization potentiodynamic studies and by ball cratering, respectively. The NbN films grown using the highly unbalanced magnetron configuration had a preferential (111) crystal orientation and a composite hardness of up to 2400 HV{sub 0.025}. While the films deposited using the balanced magnetron had a mixed crystalline orientation and a hardness of 2000 HV{sub 0.025}. The results demonstrate the strong effect of magnetic field configuration on the ion bombardment, and the resultant coating characteristics.

  3. Growth and characterization of textured well-faceted ZnO on planar Si(100, planar Si(111, and textured Si(100 substrates for solar cell applications

    Directory of Open Access Journals (Sweden)

    Chin-Yi Tsai

    2017-09-01

    Full Text Available In this work, textured, well-faceted ZnO materials grown on planar Si(100, planar Si(111, and textured Si(100 substrates by low-pressure chemical vapor deposition (LPCVD were analyzed by X-ray diffraction (XRD, scanning electron microscopy (SEM, atomic force microscopy (AFM, and cathode luminescence (CL measurements. The results show that ZnO grown on planar Si(100, planar Si(111, and textured Si(100 substrates favor the growth of ZnO(110 ridge-like, ZnO(002 pyramid-like, and ZnO(101 pyramidal-tip structures, respectively. This could be attributed to the constraints of the lattice mismatch between the ZnO and Si unit cells. The average grain size of ZnO on the planar Si(100 substrate is slightly larger than that on the planar Si(111 substrate, while both of them are much larger than that on the textured Si(100 substrate. The average grain sizes (about 10–50 nm of the ZnO grown on the different silicon substrates decreases with the increase of their strains. These results are shown to strongly correlate with the results from the SEM, AFM, and CL as well. The reflectance spectra of these three samples show that the antireflection function provided by theses samples mostly results from the nanometer-scaled texture of the ZnO films, while the micrometer-scaled texture of the Si substrate has a limited contribution. The results of this work provide important information for optimized growth of textured and well-faceted ZnO grown on wafer-based silicon solar cells and can be utilized for efficiency enhancement and optimization of device materials and structures, such as heterojunction with intrinsic thin layer (HIT solar cells.

  4. Preparation of single-crystal TiC (111) by radio frequency magnetron sputtering at low temperature

    International Nuclear Information System (INIS)

    Qi, Q.; Zhang, W.Z.; Shi, L.Q.; Zhang, W.Y.; Zhang, W.; Zhang, B.

    2012-01-01

    Single-crystal films of TiC (111) have been synthesized at room temperature on Al 2 O 3 (0001) substrates by radio frequency magnetron sputtering using a compound Ti–C target. The substrate temperature and bias were varied to explore the influence of deposition parameters on the crystal structure. Both Al 2 O 3 (0001) and Si (100) substrates were used for epitaxial growth of TiC films. A series of characterizations of TiC films were carried out, including Rutherford backscattering spectroscopy, X-ray diffraction, Raman and X-ray photoelectron spectroscopy. Single-crystal films of TiC (111) on the Al 2 O 3 (0001) were demonstrated. - Highlights: ► Single-crystal films of TiC (111) have been synthesized by RF magnetron sputtering. ► Both temperature and bias affect greatly the TiC crystal structure. ► Al 2 O 3 substrate is much better than Si substrate for TiC epitaxial growth. ► TiC (111) epitaxial film can be grown on Al 2 O 3 (0001) at room temperature.

  5. Structural and electrical properties of CuAlMo thin films prepared by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Birkett, Martin, E-mail: martin.birkett@northumbria.ac.uk; Penlington, Roger; Wan, Chaoying; Zoppi, Guillaume

    2013-07-01

    The structural and electrical properties of a low resistivity CuAlMo thin film resistor material were investigated. The thin films were grown on Al{sub 2}O{sub 3} and glass substrates by direct current (dc) magnetron sputtering. The key electrical properties of sheet resistance, temperature coefficient of resistance (TCR) and resistance stability were investigated as a function of sputtering pressure and post-deposition heat treatment time and temperature. A low sputtering pressure range of 0.13 to 0.40 Pa produced CuAlMo films with sheet resistance in the range 0.1 to 0.2 Ω/□ and resistance stability of 0.45 to 0.65% with a TCR of − 90 ppm/°C which could be shifted to zero following annealing in air at 425 °C. Films grown at higher sputtering pressures of 0.53 to 0.80 Pa had increased sheet resistance in the range 0.4 to 0.6 Ω/□ and inferior stability of 0.8 to 1.7% with a more negative TCR of − 110 to − 180 ppm/°C which could not be shifted to zero following annealing. The stability of the films grown at 0.13 and 0.40 Pa could be further improved to < 0.25% with heat treatment, due to the formation of a protective aluminium oxide layer. A minimum dwell time of 3 h at 425 °C was required to stabilise the films and set the electrical properties. - Highlights: • Thin films of copper–aluminium–molybdenum were sputtered on alumina substrates. • Film properties were investigated with variation in process conditions. • Low sputtering pressure gave improved electrical performance. • Post deposition annealing in air further improved electrical performance.

  6. Structural and electrical properties of CuAlMo thin films prepared by magnetron sputtering

    International Nuclear Information System (INIS)

    Birkett, Martin; Penlington, Roger; Wan, Chaoying; Zoppi, Guillaume

    2013-01-01

    The structural and electrical properties of a low resistivity CuAlMo thin film resistor material were investigated. The thin films were grown on Al 2 O 3 and glass substrates by direct current (dc) magnetron sputtering. The key electrical properties of sheet resistance, temperature coefficient of resistance (TCR) and resistance stability were investigated as a function of sputtering pressure and post-deposition heat treatment time and temperature. A low sputtering pressure range of 0.13 to 0.40 Pa produced CuAlMo films with sheet resistance in the range 0.1 to 0.2 Ω/□ and resistance stability of 0.45 to 0.65% with a TCR of − 90 ppm/°C which could be shifted to zero following annealing in air at 425 °C. Films grown at higher sputtering pressures of 0.53 to 0.80 Pa had increased sheet resistance in the range 0.4 to 0.6 Ω/□ and inferior stability of 0.8 to 1.7% with a more negative TCR of − 110 to − 180 ppm/°C which could not be shifted to zero following annealing. The stability of the films grown at 0.13 and 0.40 Pa could be further improved to < 0.25% with heat treatment, due to the formation of a protective aluminium oxide layer. A minimum dwell time of 3 h at 425 °C was required to stabilise the films and set the electrical properties. - Highlights: • Thin films of copper–aluminium–molybdenum were sputtered on alumina substrates. • Film properties were investigated with variation in process conditions. • Low sputtering pressure gave improved electrical performance. • Post deposition annealing in air further improved electrical performance

  7. Electrical and optical study of transparent V-based oxide semiconductors prepared by magnetron sputtering under different conditions

    Directory of Open Access Journals (Sweden)

    E. Prociow

    2011-04-01

    Full Text Available This work is focused on structural, optical and electrical behaviors of vanadium-based oxide thin films prepared by magnetron sputtering under different conditions. Thin films have been deposited on glass substrates from metallic vanadium target at low sputtering pressure. Different working gases: argon/oxygen mixture, and especially pure oxygen gas, have been applied. Results of X-ray diffraction together with optical transmission and temperature- dependent electrical resistivity measurements have been presented. Transmission coefficient, cut-off wavelength and the width of the optical band gap have been calculated from optical measurements. The d.c. resistivity values at room temperature and thermal activation energy have been obtained from electrical investigations. The influence of sputtering process conditions on optical and electrical properties has been discussed.

  8. Rutile TiO2 thin films grown by reactive high power impulse magnetron sputtering

    International Nuclear Information System (INIS)

    Agnarsson, B.; Magnus, F.; Tryggvason, T.K.; Ingason, A.S.; Leosson, K.; Olafsson, S.; Gudmundsson, J.T.

    2013-01-01

    Thin TiO 2 films were grown on Si(001) substrates by reactive dc magnetron sputtering (dcMS) and high power impulse magnetron sputtering (HiPIMS) at temperatures ranging from 300 to 700 °C. Optical and structural properties of films were compared both before and after post-annealing using scanning electron microscopy, low angle X-ray reflection (XRR), grazing incidence X-ray diffractometry and spectroscopic ellipsometry. Both dcMS- and HiPIMS-grown films reveal polycrystalline rutile TiO 2 , even prior to post-annealing. The HiPIMS-grown films exhibit significantly larger grains compared to that of dcMC-grown films, approaching 100% of the film thickness for films grown at 700 °C. In addition, the XRR surface roughness of HiPIMS-grown films was significantly lower than that of dcMS-grown films over the whole temperature range 300–700 °C. Dispersion curves could only be obtained for the HiPIMS-grown films, which were shown to have a refractive index in the range of 2.7–2.85 at 500 nm. The results show that thin, rutile TiO 2 films, with high refractive index, can be obtained by HiPIMS at relatively low growth temperatures, without post-annealing. Furthermore, these films are smoother and show better optical characteristics than their dcMS-grown counterparts. - Highlights: • We demonstrate growth of rutile TiO 2 on Si (111) by high power impulse magnetron sputtering. • The films exhibit significantly larger grains than dc magnetron sputtered films • TiO 2 films with high refractive index are obtained without post-growth annealing

  9. Nonlinear Saturation Amplitude in Classical Planar Richtmyer–Meshkov Instability

    International Nuclear Information System (INIS)

    Liu Wan-Hai; Jiang Hong-Bin; Ma Wen-Fang; Wang Xiang

    2016-01-01

    The classical planar Richtmyer–Meshkov instability (RMI) at a fluid interface supported by a constant pressure is investigated by a formal perturbation expansion up to the third order, and then according to definition of nonlinear saturation amplitude (NSA) in Rayleigh–Taylor instability (RTI), the NSA in planar RMI is obtained explicitly. It is found that the NSA in planar RMI is affected by the initial perturbation wavelength and the initial amplitude of the interface, while the effect of the initial amplitude of the interface on the NSA is less than that of the initial perturbation wavelength. Without marginal influence of the initial amplitude, the NSA increases linearly with wavelength. The NSA normalized by the wavelength in planar RMI is about 0.11, larger than that corresponding to RTI. (paper)

  10. Ring magnetron ionizer

    International Nuclear Information System (INIS)

    Alessi, J.G.

    1986-01-01

    A ring magnetron D - charge exchange ionizer has been built and tested. An H - current of 500 μA was extracted with an estimated H 0 density in the ionizer of 10 12 cm -3 . This exceeds the performance of ionizers presently in use on polarized H - sources. The ionizer will soon be tested with a polarized atomic beam

  11. DEVICE FOR INVESTIGATION OF MAGNETRON AND PULSED-LASER PLASMA

    Directory of Open Access Journals (Sweden)

    A. P. Burmakov

    2012-01-01

    Full Text Available Various modifications of complex pulsed laser and magnetron deposition thin-film structures unit are presented. They include joint and separate variants of layer deposition. Unit realizes the plasma parameters control and enhances the possibility of laser-plasma and magnetron methods of coatings deposition.

  12. High power pulsed magnetron sputtering: A method to increase deposition rate

    International Nuclear Information System (INIS)

    Raman, Priya; McLain, Jake; Ruzic, David N; Shchelkanov, Ivan A.

    2015-01-01

    High power pulsed magnetron sputtering (HPPMS) is a state-of-the-art physical vapor deposition technique with several industrial applications. One of the main disadvantages of this process is its low deposition rate. In this work, the authors report a new magnetic field configuration, which produces deposition rates twice that of conventional magnetron's dipole magnetic field configuration. Three different magnet pack configurations are discussed in this paper, and an optimized magnet pack configuration for HPPMS that leads to a higher deposition rate and nearly full-face target erosion is presented. The discussed magnetic field produced by a specially designed magnet assembly is of the same size as the conventional magnet assembly and requires no external fields. Comparison of deposition rates with different power supplies and the electron trapping efficiency in complex magnetic field arrangements are discussed

  13. Quality control on planar n-in-n pixel sensors — Recent progress of ATLAS planar pixel sensors

    International Nuclear Information System (INIS)

    Klingenberg, R.

    2013-01-01

    To extend the physics reach of the Large Hadron Collider (LHC), upgrades to the accelerator are planned which will increase the peak luminosity by a factor 5–10. To cope with the increased occupancy and radiation damage, the ATLAS experiment plans to introduce an all-silicon inner tracker with the high luminosity upgrade (HL-LHC). To investigate the suitability of pixel sensors using the proven planar technology for the upgraded tracker, the ATLAS Upgrade Planar Pixel Sensor (PPS) R and D Project was established. Main areas of research are the performance of planar pixel sensors at highest fluences, the exploration of possibilities for cost reduction to enable the instrumentation of large areas, the achievement of slim or active edges to provide low geometric inefficiencies without the need for shingling of modules and the investigation of the operation of highly irradiated sensors at low thresholds to increase the efficiency. The Insertable b-layer (IBL) is the first upgrade project within the ATLAS experiment and will employ a new detector layer consisting of silicon pixel sensors, which were improved and prototyped in the framework of the planar pixel sensor R and D project. A special focus of this paper is the status of the development and testing of planar n-in-n pixel sensors including the quality control of the on-going series production and postprocessing of sensor wafers. A high yield of produced planar sensor wafers and FE-I4 double chip sensors after first steps of post-processing including under bump metallization and dicing is observed. -- Highlights: ► Prototypes of irradiated planar n-in-n sensors have been successfully tested under laboratory conditions. ► A quality assurance programme on the series production of planar sensors for the IBL has started. ► A high yield of double chip sensors during the series production is observed which are compatible to the specifications to this detector component.

  14. Understanding deposition rate loss in high power impulse magnetron sputtering: I. Ionization-driven electric fields

    International Nuclear Information System (INIS)

    Brenning, N; Huo, C; Raadu, M A; Lundin, D; Helmersson, U; Vitelaru, C; Stancu, G D; Minea, T

    2012-01-01

    The lower deposition rate for high power impulse magnetron sputtering (HiPIMS) compared with direct current magnetron sputtering for the same average power is often reported as a drawback. The often invoked reason is back-attraction of ionized sputtered material to the target due to a substantial negative potential profile, sometimes called an extended presheath, from the location of ionization toward the cathode. Recent studies in HiPIMS devices, using floating-emitting and swept-Langmuir probes, show that such extended potential profiles do exist, and that the electric fields E z directed toward the target can be strong enough to seriously reduce ion transport to the substrate. However, they also show that the potential drops involved can vary by up to an order of magnitude from case to case. There is a clear need to understand the underlying mechanisms and identify the key discharge variables that can be used for minimizing the back-attraction. We here present a combined theoretical and experimental analysis of the problem of electric fields E z in the ionization region part of HiPIMS discharges, and their effect on the transport of ionized sputtered material. In particular, we have investigated the possibility of a ‘sweet spot’ in parameter space in which the back-attraction of ionized sputtered material is low. It is concluded that a sweet spot might possibly exist for some carefully optimized discharges, but probably in a rather narrow window of parameters. As a measure of how far a discharge is from such a window, a Townsend product Π Townsend is proposed. A parametric analysis of Π Townsend shows that the search for a sweet spot is complicated by the fact that contradictory demands appear for several of the externally controllable parameters such as high/low working gas pressure, short/long pulse length, high/low pulse power and high/low magnetic field strength. (paper)

  15. Planar metasurface retroreflector

    Science.gov (United States)

    Arbabi, Amir; Arbabi, Ehsan; Horie, Yu; Kamali, Seyedeh Mahsa; Faraon, Andrei

    2017-07-01

    Metasurfaces are two-dimensional arrangements of subwavelength scatterers that control the propagation of optical waves. Here, we show that cascaded metasurfaces, each performing a predefined mathematical transformation, provide a new optical design framework that enables new functionalities not yet demonstrated with single metasurfaces. Specifically, we demonstrate that retroreflection can be achieved with two vertically stacked planar metasurfaces, the first performing a spatial Fourier transform and its inverse, and the second imparting a spatially varying momentum to the Fourier transform of the incident light. Using this concept, we fabricate and test a planar monolithic near-infrared retroreflector composed of two layers of silicon nanoposts, which reflects light along its incident direction with a normal incidence efficiency of 78% and a large half-power field of view of 60°. The metasurface retroreflector demonstrates the potential of cascaded metasurfaces for implementing novel high-performance components, and enables low-power and low-weight passive optical transmitters.

  16. ZnO film deposition by DC magnetron sputtering: Effect of target configuration on the film properties

    Energy Technology Data Exchange (ETDEWEB)

    Arakelova, E.; Khachatryan, A.; Kteyan, A.; Avjyan, K.; Grigoryan, S.

    2016-08-01

    Ballistic transport model for target-to-substrate atom transfer during magnetron sputter deposition was used to develop zinc target (cathode) configuration that enabled growth of uniform zinc oxide films on extensive surfaces and provided reproducibility of films characteristics irrespective of the cathode wear-out. The advantage of the developed target configuration for high-quality ZnO film deposition was observed in the sputtering pressure range of 5− 50 mTorr, and in the range of cathode-to-substrate distances 7–20 cm. Characteristics of the deposited films were demonstrated by using X-ray diffraction analysis, as well as optical and electrical measurements. - Highlights: • Change of target configuration for optimization of magnetron sputtering deposition is proposed. • Improvement of ZnO film properties due to use of this target is demonstrated. • This configuration provided reproducibility of the deposited films properties.

  17. Unbalanced Cylindrical Magnetron for Accelerating Cavities Coating

    CERN Document Server

    Rosaz, Guillaume; Calatroni, Sergio; Sublet, Alban; Tobarelli, Mauro

    2016-01-01

    We report in this paper the design and qualification of a cylindrical unbalanced magnetron source. The dedicated magnetic assemblies were simulated using a finite element model. A hall-effect magnetic probe was then used to characterize those assemblies and compared to the theoretical magnet profiles. These show a good agreement between the expected and actual values. the qualification of the different magnetic assemblies was then performed by measuring the ion flux density reaching the surface of the sample to be coated using a commercial retarding field energy analyzer. The strongest unbalanced configuration shows an increase from 0.016A.cm^-2 to 0.074A.cm^-2 of the ion flux density reaching the sample surface compared to the standard balanced configuration for a pressure 5.10^-3 mbar and a plasma source power of 300W.

  18. Magnetron injection gun scaling

    International Nuclear Information System (INIS)

    Lawson, W.

    1988-01-01

    Existing analytic design equations for magnetron injection guns (MIG's) are approximated to obtain a set of scaling laws. The constraints are chosen to examine the maximum peak power capabilities of MIG's. The scaling laws are compared with exact solutions of the design equations and are supported by MIG simulations

  19. Tribological characterization of TiN coatings prepared by magnetron sputtering

    Science.gov (United States)

    Makwana, Nishant S.; Chauhan, Kamlesh V.; Sonera, Akshay L.; Chauhan, Dharmesh B.; Dave, Divyeshkumar P.; Rawal, Sushant K.

    2018-05-01

    Titanium nitride (TiN) coating deposited on aluminium and brass pin substrates using RF reactive magnetron sputtering. The structural properties and surface morphology were characterized by X-ray diffraction (XRD), atomic force microscope (AFM) and field emission scanning electron microscope (FE-SEM). There was formation of (101) Ti2N, (110) TiN2 and (102) TiN0.30 peaks at 3.5Pa, 2Pa and 1.25Pa sputtering pressure respectively. The tribological properties of coating were inspected using pin on disc tribometer equipment. It was observed that TiN coated aluminium and brass pins demonstrated improved wear resistance than uncoated aluminium and brass pins.

  20. Microstructural variation in titanium oxide thin films deposited by DC magnetron sputtering

    International Nuclear Information System (INIS)

    Pandian, Ramanathaswamy; Natarajan, Gomathi; Kamruddin, M.; Tyagi, A.K.

    2013-01-01

    We report on the microstructural evolution of titanium oxide thin films deposited by reactive DC magnetron sputtering using titanium metal target. By varying the ratio of sputter-gas mixture containing argon, oxygen and nitrogen various phases of titanium oxide, almost pure rutile, rutile-rich and anatase-rich nano-crystalline, were deposited on Si substrates at room temperature. Using high-resolution scanning electron microscopy, X-ray diffraction and micro-Raman techniques the microstructure of the films were revealed. The relationship between the microstructure of the films and the oxygen partial pressure during sputtering is discussed

  1. Room temperature growth of nanocrystalline anatase TiO{sub 2} thin films by dc magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Preetam, E-mail: preetamphy@gmail.co [Functional Nanomaterials Research Lab, Department of Physics and Centre of Nanotechnology, Indian Institute of Technology Roorkee, Roorkee 247667 (India); Kaur, Davinder [Functional Nanomaterials Research Lab, Department of Physics and Centre of Nanotechnology, Indian Institute of Technology Roorkee, Roorkee 247667 (India)

    2010-03-01

    We report, the structural and optical properties of nanocrystalline anatase TiO{sub 2} thin films grown on glass substrate by dc magnetron sputtering at room temperature. The influence of sputtering power and pressure over crystallinity and surface morphology of the films were investigated. It was observed that increase in sputtering power activates the TiO{sub 2} film growth from relative lower surface free energy to higher surface free energy. XRD pattern revealed the change in preferred orientation from (1 0 1) to (0 0 4) with increase in sputtering power, which is accounted for different surface energy associated with different planes. Microstructure of the films also changes from cauliflower type to columnar type structures with increase in sputtering power. FESEM images of films grown at low pressure and low sputtering power showed typical cauliflower like structure. The optical measurement revealed the systematic variation of the optical constants with deposition parameters. The films are highly transparent with transmission higher than 90% with sharp ultraviolet cut off. The transmittance of these films was found to be influenced by the surface roughness and film thickness. The optical band gap was found to decrease with increase in the sputtering power and pressure. The refractive index of the films was found to vary in the range of 2.50-2.24 with increase in sputtering pressure or sputtering power, resulting in the possibility of producing TiO{sub 2} films for device applications with different refractive index, by changing the deposition parameters.

  2. An Al-doped ZnO electrode grown by highly efficient cylindrical rotating magnetron sputtering for low cost organic photovoltaics

    Science.gov (United States)

    Park, Jun-Hyuk; Ahn, Kyung-Jun; Park, Kang-Il; Na, Seok-In; Kim, Han-Ki

    2010-03-01

    We report the characteristics of Al-doped zinc oxide (AZO) films prepared by a highly efficient cylindrical rotating magnetron sputtering (CRMS) system for use as a transparent conducting electrode in cost-efficient bulk hetero-junction organic solar cells (OSCs). Using a rotating cylindrical type cathode with an AZO target, whose usage was above 80%, we were able to obtain a low cost and indium free AZO electrode with a low sheet resistance of ~4.59 Ω/sq, a high transparency of 85% in the visible wavelength region and a work function of 4.9 eV at a substrate temperature of 230 °C. Moreover, the neutral poly(3,4-ethylenedioxythiophene) : poly(styrenesulfonate) based OSC fabricated on the CRMS-grown AZO electrode at 230 °C showed an open circuit voltage of 0.5 V, a short circuit current of 8.94 mA cm-2, a fill factor of 45% and power conversion efficiency of 2.01%, indicating that CRMS is a promising cost-efficient AZO deposition technique for low cost OSCs.

  3. Nanoscale displacement sensing using microfabricated variable-inductance planar coils

    Science.gov (United States)

    Coskun, M. Bulut; Thotahewa, Kasun; Ying, York-Sing; Yuce, Mehmet; Neild, Adrian; Alan, Tuncay

    2013-09-01

    Microfabricated spiral inductors were employed for nanoscale displacement detection, suitable for use in implantable pressure sensor applications. We developed a variable inductor sensor consisting of two coaxially positioned planar coils connected in series to a measurement circuit. The devices were characterized by varying the air gap between the coils hence changing the inductance, while a Colpitts oscillator readout was used to obtain corresponding frequencies. Our approach shows significant advantages over existing methodologies combining a displacement resolution of 17 nm and low hysteresis (0.15%) in a 1 × 1 mm2 device. We show that resolution could be further improved by shrinking the device's lateral dimensions.

  4. Planar compaction of ceramic powders with mining explosives

    International Nuclear Information System (INIS)

    Stuivinga, M.; Verbeek, H.J.; Carton, E.P.

    2000-01-01

    Shock compaction experiments of B 4 C powders have been performed using a planar configuration. The powders were contained between metal plates. On top of the upper plate, having a thickness of about 10 mm, was a layer of mining explosives. For this configuration, computer simulations have been performed with use of the hydrocode Autodyn. In comparison with the cylindrical compaction process the planar compaction process appears to be quite different. The reason is the very low detonation velocity of the used mining explosives (2-4 km/s), which is much lower than the sound and shock speeds of the steel plate, in combination with the relatively large thickness of the metal layer. As a result, the nature of the compaction process of the powder initially more resembles a quasi-static compaction process than a shock compaction process. Due to the quasi-static nature of the compaction, the pressure release in the powder after compression is very gradual. Therefore, no strong rarefaction waves leading to high tensile stresses in the compact arise. Flat plates (10x10 cm, 0.6-0.8 cm thick) of Al (20-30 vol %) infiltrated B 4 C have been fabricated using this configuration

  5. Life test on indigenous s-band pulsed magnetron

    International Nuclear Information System (INIS)

    Wanmode, Y.D.; Shrivastava, P.; Hannurkar, P.R.

    1999-01-01

    A 2 MW S-band pulsed magnetron has been developed under joint collaboration between CAT and CEERI. In this development effort several lab prototypes were evaluated on 2 MW microwave test facility developed at CAT. One magnetron is subjected to life test. The present paper describes the setup and procedures used for life test. Various observations and corrections made during the life tests are also described. Results of the tests are discussed. (author)

  6. Experimental study on an S-band near-field microwave magnetron power transmission system on hundred-watt level

    Science.gov (United States)

    Zhang, Biao; Jiang, Wan; Yang, Yang; Yu, Chengyang; Huang, Kama; Liu, Changjun

    2015-11-01

    A multi-magnetron microwave source, a metamaterial transmitting antenna, and a large power rectenna array are presented to build a near-field 2.45 GHz microwave power transmission system. The square 1 m2 rectenna array consists of sixteen rectennas with 2048 Schottky diodes for large power microwave rectifying. It receives microwave power and converts them into DC power. The design, structure, and measured performance of a unit rectenna as well as the entail rectenna array are presented in detail. The multi-magnetron microwave power source switches between half and full output power levels, i.e. the half-wave and full-wave modes. The transmission antenna is formed by a double-layer metallic hole array, which is applied to combine the output power of each magnetron. The rectenna array DC output power reaches 67.3 W on a 1.2 Ω DC load at a distance of 5.5 m from the transmission antenna. DC output power is affected by the distance, DC load, and the mode of microwave power source. It shows that conventional low power Schottky diodes can be applied to a microwave power transmission system with simple magnetrons to realise large power microwave rectifying.

  7. Deposition of Al/Cu Multilayer By Double Targets Cylindrical DC Magnetron Sputtering System

    Directory of Open Access Journals (Sweden)

    P. Balashabadi

    2013-12-01

    Full Text Available A cylindrical direct current magnetron sputtering coater with two targets for deposition of multilayer thin films and cermet solar selective surfaces has been constructed. The substrate holder was able to rotate around the target for obtaining the uniform layer and separated multilayer phases. The Al/ Cu multilayer film was deposited on the glass substrate at the following conditions: Working gas = Pure argon, Working pressure = 1 Pa, Cathode current = 8 A and cathode voltage = -600 V .Microstructure of the film was investigated by X-Ray Diffraction and the scanning electron microscopy analyses. The elements profile was determined by glow discharge–optical emission spectroscopy analysis. During deposition, both targets with magnetron configuration were sputtered simultaneously by argon ions. A Plasma column on the targets surface was generated by a 290 G permanent magnet unit. Two DC power supply units with three phases input and maximum output of 12 A/1000V were used to deposit the multilayer thin films. A control phase system was used to adjust output voltage.

  8. Estimation of Sputtering Damages on a Magnetron H- Ion Source Induced by Cs+ and H+ Ions

    CERN Document Server

    Pereira, H; Alessi, J; Kalvas, t

    2013-01-01

    An H− ion source is being developed for CERN’s Linac4 accelerator. A beam current requirement of 80 mA and a reliability above 99% during 1 year with 3 month uninterrupted operation periods are mandatory. To design a low-maintenance long life-time source, it is important to investigate and understand the wear mechanisms. A cesiated plasma discharge ion source, such as the BNL magnetron source, is a good candidate for the Linac4 ion source. However, in the magnetron source operated at BNL, the removal of material from the molybdenum cathode and the stainless steel anode cover plate surfaces is visible after extended operation periods. The observed sputtering traces are shown to result from cesium vapors and hydrogen gas ionized in the extraction region and subsequently accelerated by the extraction field. This paper presents a quantitative estimate of the ionization of cesium and hydrogen by the electron and H− beams in the extraction region of BNL’s magnetron ion source. The respective contributions o...

  9. THE EFFECT OF PRESSURE, BIAS VOLTAGE AND ANNEALING TEMPERATURE ON N₂ AND N₂+SiH₄ DOPED WC/C DC MAGNETRON SPUTTERED LAYERS

    Directory of Open Access Journals (Sweden)

    Peter Hornak

    2017-12-01

    Full Text Available Tungsten carbide (WC/C layers are often researched due to their outstanding mechanical and tribological properties. Here, optimized indented hardness (HIT, indentation modulus (EIT and coefficient of friction (COF values were measured to study the effect of pressure and bias voltage on WC/C layers, deposited on Si by DC magnetron spluttering. Maximal values of HIT=37.2±4.8 GPa, EIT=447±28 GPa and COF=0.64±0.09 were obtained. Additionally, the effect of temperature on optimized layers deposited with and without N₂ and N₂+SiH₄ annealed at 200 °C, 500 °C and 800 °C, were also investigated. The values of HIT, EIT and COF and, observed morphology and structural composition of these contaminated and non-contaminated WC/C layers were evaluated. It was found that layer degradation occurred at different rates depending on the temperature and gas mixture used during the annealing and deposition process, respectively.

  10. Mechanical and tribological properties of crystalline aluminum nitride coatings deposited on stainless steel by magnetron sputtering

    Science.gov (United States)

    Choudhary, R. K.; Mishra, S. C.; Mishra, P.; Limaye, P. K.; Singh, K.

    2015-11-01

    Aluminum nitride (AlN) coating is a potential candidate for addressing the problems of MHD pressure drop, tritium permeation and liquid metal corrosion of the test blanket module of fusion reactor. In this work, AlN coatings were grown on stainless steel by magnetron sputtering. Grazing incidence X-ray diffraction measurement revealed that formation of mixed phase (wurtzite and rock salt) AlN was favored at low discharge power and substrate negative biasing. However, at sufficiently high discharge power and substrate bias, (100) oriented wurtzite AlN was obtained. Secondary ion mass spectroscopy showed presence of oxygen in the coatings. The highest value of hardness and Young's modulus were 14.1 GPa and 215 GPa, respectively. Scratch test showed adhesive failure at a load of about 20 N. Wear test showed improved wear resistance of the coatings obtained at higher substrate bias.

  11. Reactive magnetron sputtering deposition of bismuth tungstate onto titania nanoparticles for enhancing visible light photocatalytic activity

    Energy Technology Data Exchange (ETDEWEB)

    Ratova, Marina, E-mail: marina_ratova@hotmail.com [Surface Engineering Group, School of Engineering, Manchester Metropolitan University, Manchester, M1 5GD (United Kingdom); Kelly, Peter J.; West, Glen T. [Surface Engineering Group, School of Engineering, Manchester Metropolitan University, Manchester, M1 5GD (United Kingdom); Tosheva, Lubomira; Edge, Michele [School of Science and the Environment, Manchester Metropolitan University, Manchester M1 5GD (United Kingdom)

    2017-01-15

    Highlights: • Bismuth tungstate coatings were deposited by reactive magnetron sputtering. • Oscillating bowl was introduced to the system to enable coating of nanopartulates. • Deposition of Bi{sub 2}WO{sub 6} enhanced visible light activity of titania nanoparticles. • The best results were obtained for coating with Bi:W ratio of approximately 2:1. • Deposition of Bi{sub 2}WO{sub 6} onto TiO{sub 2} resulted in more efficient electron-hole separation. - Abstract: Titanium dioxide − bismuth tungstate composite materials were prepared by pulsed DC reactive magnetron sputtering of bismuth and tungsten metallic targets in argon/oxygen atmosphere onto anatase and rutile titania nanoparticles. The use of an oscillating bowl placed beneath the two magnetrons arranged in a co-planar closed field configuration enabled the deposition of bismuth tungstate onto loose powders, rather than a solid substrate. The atomic ratio of the bismuth/tungsten coatings was controlled by varying the power applied to each target. The effect of the bismuth tungstate coatings on the phase, optical and photocatalytic properties of titania was investigated by X-ray diffraction, energy-dispersive X-ray spectroscopy (EDX), Brunauer–Emmett–Teller (BET) surface area measurements, transmission electron microscopy (TEM), UV–vis diffuse reflectance spectroscopy and an acetone degradation test. The latter involved measurements of the rate of CO{sub 2} evolution under visible light irradiation of the photocatalysts, which indicated that the deposition of bismuth tungstate resulted in a significant enhancement of visible light activity, for both anatase and rutile titania particles. The best results were achieved for coatings with a bismuth to tungsten atomic ratio of 2:1. In addition, the mechanism by which the photocatalytic activity of the TiO{sub 2} nanoparticles was enhanced by compounding it with bismuth tungstate was studied by microwave cavity perturbation. The results of these

  12. Titanium dioxide (TIO2) thin film and plasma properties in RF magnetron sputtering

    International Nuclear Information System (INIS)

    Ali, Riyaz Ahmad Mohamed; Nayan, Nafarizal

    2013-01-01

    Lately, titanium dioxide (TiO 2 ) films with anatase crystalline property received numerous attentions as unique material properties. There are wide applications of TiO 2 thin film such as for photocatalytic application in solar cell. In the present study, radio frequency (RF) magnetron sputtering technique has been used to produce high dense, homogeneously controllable film layer at low deposition temperature using titanium (Ti) target. The diameter of the Ti target is 3 inch with fixed discharge power of 400W. Magnetron sputtering plasma has been produced in high purity 99.99% Argon (Ar) and 99.99% Oxygen (O 2 ) environment pressure ranging from 5 to 20 mTorr. The TiO2 were growth on silicon and glass substrates. Substrate temperature during deposition was kept constant at 400°C. The distance between target and substrate holder was maintain at 14 cm with rotation of 10 rotation-per-minutes. Our X-ray diffraction result, shows anatase crystalline successfully formed with characterization peaks of plane (101) at 2θ = 25.28°, plane (202) at 2θ = 48.05° and plane (211) at 2θ = 55.06°. In addition, it is our interest to study the plasma properties and optical spectrum of Ti, Ti+ , O- , ArM and Ar+ in the chamber during the deposition process. Result of emission line intensities, electron density and temperature from optical spectroscope and Langmuir probe will be discuss further during the workshop. This works were supported by Graduate Incentive Scheme of Universiti Tun Hussein Onn Malaysia (UTHM) and Fundamental Research Grant Scheme of Ministry of Higher Education, Malaysia. (author)

  13. Indium zinc oxide films deposited on PET by LF magnetron sputtering

    International Nuclear Information System (INIS)

    Kim, Eun Lyoung; Jung, Sang Kooun; Sohn, Sang Ho; Park, Duck Kyu

    2007-01-01

    Indium zinc oxide (IZO) has attracted much attention recently for use in transparent oxide films compared with the ITO film. We carried out the deposition of IZO on a polyethylene terapthalate (PET) substrate at room temperature by a low-frequency (LF) magnetron sputtering system. These films have amorphous structures with excellent electrical stability, surface uniformity and high optical transmittance. The effects of LF applied voltage and O 2 flow rate were investigated. The electrical and optical properties were studied. At optimal deposition conditions, thin films of IZO with a sheet resistance of 32 Ω/sq and an optical transmittance of over 80% in the visible spectrum range were achieved. The IZO thin films fabricated by this method do not require substrate heating during the film preparation of any additional post-deposition annealing treatment. The experimental results show that films with good qualities of surface morphology, transmittance and electrical conduction can be grown by the LF magnetron sputtering method on PET which is recommendable

  14. Recent progress in thin film processing by magnetron sputtering with plasma diagnostics

    International Nuclear Information System (INIS)

    Han, Jeon G

    2009-01-01

    The precise control of the structure and related properties becomes crucial for sophisticated applications of thin films deposited by magnetron sputtering in emerging industries including the flat panel display, digital electronics and nano- and bio-industries. The film structure is closely related to the total energy delivered to the substrate surface for nucleation and growth during all kinds of thin film processes, including magnetron sputtering. Therefore, the energy delivered to the surface for nucleation and growth during magnetron sputtering should be measured and analysed by integrated diagnostics of the plasma parameters which are closely associated with the process parameters and other external process conditions. This paper reviews the background of thin film nucleation and growth, the status of magnetron sputtering technology and the progress of plasma diagnostics for plasma processing. The evolution of the microstructure during magnetron sputtering is then discussed with respect to the change in the process variables in terms of the plasma parameters along with empirical data of the integrated plasma diagnostics for various magnetron sputtering conditions with conventional dc, pulsed dc and high power pulsed dc sputtering modes. Among the major energy terms to be discussed are the temperature change in the top surface region and the energies of ions and neutral species. (topical review)

  15. Simple microwave plasma source at atmospheric pressure

    International Nuclear Information System (INIS)

    Kim, Jeong H.; Hong, Yong C.; Kim, Hyoung S.; Uhm, Han S.

    2003-01-01

    We have developed a thermal plasma source operating without electrodes. One electrodeless torch is the microwave plasma-torch, which can produce plasmas in large quantities. We can generate plasma at an atmospheric pressure by marking use of the same magnetrons used as commercial microwave ovens. Most of the magnetrons are operated at the frequency of 2.45 GHz; the magnetron power microwave is about 1kW. Electromagnetic waves from the magnetrons propagate through a shorted waveguide. Plasma was generated under a resonant condition, by an auxiliary ignition system. The plasma is stabilized by vortex stabilization. Also, a high-power and high-efficiency microwave plasma-torch has been operated in air by combining two microwave plasma sources with 1kW, 2.45 GHz. They are arranged in series to generate a high-power plasma flame. The second torch adds all its power to the plasma flame of the first torch. Basically, electromagnetic waves in the waveguide were studied by a High Frequency Structure Simulator (HFSS) code and preliminary experiments were conducted

  16. Influence of Magnetron Effect on Barium Hexaferrite Thin Layers

    International Nuclear Information System (INIS)

    Hassane, H.; Chatelon, J.P.; Rousseau, J.J; Siblini, A.; Kriga, A.

    2011-01-01

    In this paper, we study the effects of a magnet, located in the cathode, on barium hexaferrite thin films deposited by RF magnetron sputtering technique. During the process, these effects can modify thickness, roughness and stress of coatings. The characteristics of the deposited layers depend on the substrate position that is located opposite of magnetron cathode. In the m agnetron area , one can observe that the high stress can produce cracks or detachment of layers and the increasing of both depositing rate and surface roughness. After sputtering elaboration, barium hexaferrite films are in a compressive stress mode. But, after the post-deposition heat treatment these films are in a tensile stress mode. To improve the quality of BaM films, the subsrtate has to be set outside the magnetron area. (author)

  17. Deposition Rates of High Power Impulse Magnetron Sputtering: Physics and Economics

    Energy Technology Data Exchange (ETDEWEB)

    Anders, Andre

    2009-11-22

    Deposition by high power impulse magnetron sputtering (HIPIMS) is considered by some as the new paradigm of advanced sputtering technology, yet this is met with skepticism by others for the reported lower deposition rates, if compared to rates of more conventional sputtering of equal average power. In this contribution, the underlying physical reasons for the rate changes are discussed, including (i) ion return to the target and self-sputtering, (ii) the less-than-linear increase of the sputtering yield with increasing ion energy, (iii) yield changes due to the shift of species responsible for sputtering, (iv) changes to due to greater film density, limited sticking, and self-sputtering on the substrate, (v) noticeable power losses in the switch module, (vi) changes of the magnetic balance and particle confinement of the magnetron due to self-fields at high current, and (vii) superposition of sputtering and sublimation/evaporation for selected materials. The situation is even more complicated for reactive systems where the target surface chemistry is a function of the reactive gas partial pressure and discharge conditions. While most of these factors imply a reduction of the normalized deposition rate, increased rates have been reported for certain conditions using hot targets and less poisoned targets. Finally, some points of economics and HIPIMS benefits considered.

  18. Deposition rates of high power impulse magnetron sputtering: Physics and economics

    International Nuclear Information System (INIS)

    Anders, Andre

    2010-01-01

    Deposition by high power impulse magnetron sputtering (HIPIMS) is considered by some as the new paradigm of advanced sputtering technology, yet this is met with skepticism by others for the reported lower deposition rates, if compared to rates of more conventional sputtering of equal average power. In this contribution, the underlying physical reasons for the rate changes are discussed, including (i) ion return to the target and self-sputtering, (ii) the less-than-linear increase in the sputtering yield with increasing ion energy, (iii) yield changes due to the shift of species responsible for sputtering, (iv) changes due to greater film density, limited sticking, and self-sputtering on the substrate, (v) noticeable power losses in the switch module, (vi) changes in the magnetic balance and particle confinement of the magnetron due to self-fields at high current, and (vii) superposition of sputtering and sublimation/evaporation for selected materials. The situation is even more complicated for reactive systems where the target surface chemistry is a function of the reactive gas partial pressure and discharge conditions. While most of these factors imply a reduction in the normalized deposition rate, increased rates have been reported for certain conditions using hot targets and less poisoned targets. Finally, some points of economics and HIPIMS benefits are considered.

  19. Heteroepitaxial Ge-on-Si by DC magnetron sputtering

    Directory of Open Access Journals (Sweden)

    Martin Steglich

    2013-07-01

    Full Text Available The growth of Ge on Si(100 by DC Magnetron Sputtering at various temperatures is studied by Spectroscopic Ellipsometry and Transmission Electron Microscopy. Smooth heteroepitaxial Ge films are prepared at relatively low temperatures of 380°C. Typical Stransky-Krastanov growth is observed at 410°C. At lower temperatures (320°C, films are essentially amorphous with isolated nanocrystallites at the Si-Ge interface. A minor oxygen contamination at the interface, developing after ex-situ oxide removal, is not seen to hinder epitaxy. Compensation of dislocation-induced acceptors in Ge by sputtering from n-doped targets is proposed.

  20. NOVEL TECHNIQUE OF POWER CONTROL IN MAGNETRON TRANSMITTERS FOR INTENSE ACCELERATORS

    Energy Technology Data Exchange (ETDEWEB)

    Kazakevich, G. [MUONS Inc., Batavia; Johnson, R. [MUONS Inc., Batavia; Neubauer, M.; Lebedev, V. [Fermilab; Schappert, W. [Fermilab; Yakovlev, V. [Fermilab

    2016-10-21

    A novel concept of a high-power magnetron transmitter allowing dynamic phase and power control at the frequency of locking signal is proposed. The transmitter compensating parasitic phase and amplitude modulations inherent in Superconducting RF (SRF) cavities within closed feedback loops is intended for powering of the intensity-frontier superconducting accelerators. The con- cept uses magnetrons driven by a sufficient resonant (in- jection-locking) signal and fed by the voltage which can be below the threshold of self-excitation. This provides an extended range of power control in a single magnetron at highest efficiency minimizing the cost of RF power unit and the operation cost. Proof-of-principle of the proposed concept demonstrated in pulsed and CW regimes with 2.45 GHz, 1kW magnetrons is discussed here. A conceptual scheme of the high-power transmitter allowing the dynamic wide-band phase and y power controls is presented and discussed.

  1. Nanoporous zinc oxide films prepared by magnetron sputtering

    International Nuclear Information System (INIS)

    Ghimpu, L.; Lupan, O.; Popescu, L.; Tiginyanu, I.M.

    2011-01-01

    In this paper we demonstrate an inexpensive approach for the fabrication of nanoporous zinc oxide films by using magnetron sputtering. Study of the structural properties proves the crystallographic perfection of porous nanostructures and the possibility of its controlling by adjusting the technological parameters in the growth process. The XRD pattern of nanoporous ZnO films exhibits high intensity of the peaks relative to the background signal which is indicative of the ZnO hexagonal phase and a good crystallinity of the samples grown by magnetron sputtering.

  2. Evaluated Rayleigh integrals for pulsed planar expanding ring sources

    International Nuclear Information System (INIS)

    Warshaw, S.I.

    1985-01-01

    Time-domain analytic and semianalytic pressure fields acoustically radiated from expanding pulsed ring sources imbedded in a planar rigid baffle have been calculated. The source functions are radially symmetric delta-function distributions whose amplitude and argument have simple functional dependencies on radius and time. Certain cases yield closed analytic results, while others result in elliptic integrals, which are evaluated to high accuracy by Gauss-Chebyshev and modified Gauss-Legendre quadrature. These results are of value for calibrating computer simulations and convolution procedures, and estimating fields from more complex planar radiators. 3 refs., 4 figs

  3. An inverted cylindrical sputter magnetron as metal vapor supply for electron cyclotron resonance ion sources

    Energy Technology Data Exchange (ETDEWEB)

    Weichsel, T., E-mail: tim.weichsel@fep.fraunhofer.de; Hartung, U.; Kopte, T. [Fraunhofer Institute for Electron Beam and Plasma Technology, 01277 Dresden (Germany); Zschornack, G. [Institute of Solid State Physics, Dresden University of Technology, 01062 Dresden, Germany and Helmholtz-Zentrum Dresden-Rossendorf e.V., Institute of Ion Beam Physics and Materials Research, Dresden (Germany); Kreller, M.; Silze, A. [DREEBIT GmbH, 01900 Grossroehrsdorf (Germany)

    2014-05-15

    An inverted cylindrical sputter magnetron device has been developed. The magnetron is acting as a metal vapor supply for an electron cyclotron resonance (ECR) ion source. FEM simulation of magnetic flux density was used to ensure that there is no critical interaction between both magnetic fields of magnetron and ECR ion source. Spatially resolved double Langmuir probe and optical emission spectroscopy measurements show an increase in electron density by one order of magnitude from 1 × 10{sup 10} cm{sup −3} to 1 × 10{sup 11} cm{sup −3}, when the magnetron plasma is exposed to the magnetic mirror field of the ECR ion source. Electron density enhancement is also indicated by magnetron plasma emission photography with a CCD camera. Furthermore, photographs visualize the formation of a localized loss-cone - area, when the magnetron is operated at magnetic mirror field conditions. The inverted cylindrical magnetron supplies a metal atom load rate of R > 1 × 10{sup 18} atoms/s for aluminum, which meets the demand for the production of a milliampere Al{sup +} ion beam.

  4. Preparation of high-pressure phase boron nitride films by physical vapor deposition

    CERN Document Server

    Zhu, P W; Zhao, Y N; Li, D M; Liu, H W; Zou Guang Tian

    2002-01-01

    The high-pressure phases boron nitride films together with cubic, wurtzic, and explosive high-pressure phases, were successfully deposited on the metal alloy substrates by tuned substrate radio frequency magnetron sputtering. The percentage of cubic boron nitride phase in the film was about 50% as calculated by Fourier transform infrared measurements. Infrared peak position of cubic boron nitride at 1006.3 cm sup - sup 1 , which is close to the stressless state, indicates that the film has very low internal stress. Transition electron microscope micrograph shows that pure cubic boron nitride phase exits on the surface of the film. The growth mechanism of the BN films was also discussed.

  5. Characterization and modelling of low-pressure rf discharges at 2-500 MHz for miniature alkali vapour dielectric barrier discharge lamps

    International Nuclear Information System (INIS)

    Venkatraman, Vinu; Shea, Herbert; Pétremand, Yves; Rooij, Nico de

    2012-01-01

    Low-pressure dielectric barrier discharge (DBD) alkali vapour lamps are of particular interest for portable atomic clocks because they (1) could enable low-power operation, (2) generate the precise required wavelength, (3) are planar simplifying chip-level integration and (4) use external electrodes, which increases the lifetime. Given the stringent requirements on lamps for atomic clocks, it is important to identify the parameters that can be optimized to meet these performance requirements (size, power consumption, stability, reliability). We report on the electrical and optical characteristics of dielectric barrier plasma discharges observed in two configurations: (1) in a vacuum chamber over a wide low-pressure range (2-100 mbar) for three different buffer gases (He, Ar, N 2 ) driven at different frequencies between 2 and 500 MHz and (2) on microfabricated hermetically sealed Rb vapour cells filled with 30 and 70 mbar of Ar. We discuss the optimum conditions for a low-power and stable operation of a Rb vapour DBD lamp, aimed at chip-scale atomic clocks. We also present the electrical modelling of the discharge parameters to understand the power distribution mechanisms and the input power to discharge power coupling efficiency.

  6. Inkjet-based adaptive planarization (Conference Presentation)

    Science.gov (United States)

    Singhal, Shrawan; Grigas, Michelle M.; Khusnatdinov, Niyaz; Sreenivasan, Srinivasan V.

    2017-03-01

    Planarization is a critical unit step in the lithography process because it enables patterning of surfaces with versatile pattern density without compromising on the stringent planarity and depth-of-focus requirements. In addition to nanoscale pattern density variation, parasitics such as pre-existing wafer topography, can corrupt the desired process output after planarization. The topography of any surface can be classified in three broad categories, depending upon the amplitude and spatial wavelength of the same [1], [2]: (i) nominal shape, (ii) nanotopography and (iii) roughness. The nominal shape is given by the largest spatial wavelengths, typically back is one technique used for micron scale device manufacturing [3]. As the name implies, a glass dielectric is spin-coated on the substrate followed by etching in a chemistry that ensures equal etching rates for both the sacrificial glass and the underlying film or substrate material. Photoresists may also be used instead of glass. However, the global planarity that can be achieved by this technique is limited. Also, planarization over a large isolated topographical feature has been studied for the reverse-tone Jet-and-Flash Imprint Lithography process, also known as JFIL-R [4]. This relies on surface tension and capillary effects to smoothen a spin-coated Si containing film that can be etched to obtain a smooth profile. To meet the stringent requirement of planarity in submicron device technologies Chemical Mechanical Planarization (CMP) is the most widely used planarization technology [5], [6]. It uses a combination of abrasive laden chemical slurry and a mechanical pad for achieving planar profiles. The biggest concern with CMP is the dependence of material removal rate on the pattern density of material, leading to the formation of a step between the high density and low-density. The step shows up as a long-range thickness variation in the planarized film, similar in scale to pre-existing substrate topography

  7. Electrical and optical properties of nitrogen doped SnO2 thin films deposited on flexible substrates by magnetron sputtering

    International Nuclear Information System (INIS)

    Fang, Feng; Zhang, Yeyu; Wu, Xiaoqin; Shao, Qiyue; Xie, Zonghan

    2015-01-01

    Graphical abstract: The best SnO 2 :N TCO film: about 80% transmittance and 9.1 × 10 −4 Ω cm. - Highlights: • Nitrogen-doped tin oxide film was deposited on PET by RF-magnetron sputtering. • Effects of oxygen partial pressure on the properties of thin films were investigated. • For SnO 2 :N film, visible light transmittance was 80% and electrical resistivity was 9.1 × 10 −4 Ω cm. - Abstract: Nitrogen-doped tin oxide (SnO 2 :N) thin films were deposited on flexible polyethylene terephthalate (PET) substrates at room temperature by RF-magnetron sputtering. Effects of oxygen partial pressure (0–4%) on electrical and optical properties of thin films were investigated. Experimental results showed that SnO 2 :N films were amorphous state, and O/Sn ratios of SnO 2 :N films were deviated from the standard stoichiometry 2:1. Optical band gap of SnO 2 :N films increased from approximately 3.10 eV to 3.42 eV as oxygen partial pressure increased from 0% to 4%. For SnO 2 :N thin films deposited on PET, transmittance was about 80% in the visible light region. The best transparent conductive oxide (TCO) deposited on flexible PET substrates was SnO 2 :N thin films preparing at 2% oxygen partial pressure, the transmittance was about 80% and electrical conductivity was about 9.1 × 10 −4 Ω cm

  8. Substrate heating and cooling during magnetron sputtering of copper target

    Energy Technology Data Exchange (ETDEWEB)

    Shapovalov, Viktor I.; Komlev, Andrey E.; Bondarenko, Anastasia S., E-mail: stopnastia@gmail.com; Baykov, Pavel B.; Karzin, Vitaliy V.

    2016-02-22

    Heating and cooling processes of the substrate during the DC magnetron sputtering of the copper target were investigated. The sensitive element of a thermocouple was used as a substrate. It was found, that the heat outflow rate from the substrate is lower when the magnetron is turned off rather than when it is turned on. Furthermore, the heating rate, the ultimate temperature, and the heat outflow rate related to the deposition of copper atoms are directly proportional to the discharge current density. - Highlights: • New effect of heat outflow from substrate when magnetron is on was discovered. • This new effect is linear in terms of heat outflow rate to target current ratio. • Kinetic equation for heating process additively considers this effect.

  9. Algan/Gan Hemt By Magnetron Sputtering System

    Science.gov (United States)

    Garcia Perez, Roman

    In this thesis, the growth of the semiconductor materials AlGaN and GaN is achieved by magnetron sputtering for the fabrication of High Electron Mobility Transistors (HEMTs). The study of the deposited nitrides is conducted by spectroscopy, diffraction, and submicron scale microscope methods. The preparation of the materials is performed using different parameters in terms of power, pressure, temperature, gas, and time. Silicon (Si) and Sapphire (Al2O3) wafers are used as substrates. The chemical composition and surface topography of the samples are analyzed to calculate the materials atomic percentages and to observe the devices surface. The instruments used for the semiconductors characterization are X-ray Photoelectron Spectroscopy (XPS), X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), and Atomic Force Microscope (AFM). The project focused its attention on the reduction of impurities during the deposition, the controlled thicknesses of the thin-films, the atomic configuration of the alloy AlxGa1-xN, and the uniformity of the surfaces.

  10. Application of high rate magnetron sputtering to the fabrication of A-15 compounds

    International Nuclear Information System (INIS)

    Kampwirth, R.T.; Hafstrom, J.W.; Wu, C.T.

    1976-01-01

    High quality Nb 3 Sn films have been fabricated using a recently developed magnetron sputtering process capable of deposition rates approaching 1 μm/min. at sputtering voltages less than 500 V and power levels of about 5 KW. Low sputtering voltages allow more complete thermalization at lower pressures of the material condensing on the substrate which can improve long range order. Transition temperatures of up to 18.3 0 K, J/sub c/(O)'s of 15 x 10 6 A/cm 2 and Hc 2 as high as 240 kOe have been achieved in 1-3 μm films deposited from a Nb 3 Sn reacted powder target with substrate temperatures between 600 and 800 0 C. The films exhibit smooth surfaces and, generally, a [200] preferred orientation. The growth of the film is columnar in nature. The sputtering parameters, substrate material and temperature will be related to film structure T/sub c/ and J/sub c/(H,T) and the Nb/Sn ratio as determined by Rutherford backscattering

  11. Chemical mechanical polishing characteristics of ITO thin film prepared by RF magnetron sputtering

    International Nuclear Information System (INIS)

    Lee, Kang-Yeon; Choi, Gwon-Woo; Kim, Yong-Jae; Choi, Youn-Ok; Kim, Nam-Oh

    2012-01-01

    Indium-tin-oxide (ITO) thin films have attracted intensive interest because of their unique properties of good conductivity, high optical transmittance over the visible region and easy patterning ability. ITO thin films have found many applications in anti-static coatings, thermal heaters, solar cells, flat panel displays (FPDs), liquid crystal displays (LCDs), electroluminescent devices, sensors and organic light-emitting diodes (OLEDs). ITO thin films are generally fabricated by using various methods, such as spraying, chemical vapor deposition (CVD), evaporation, electron gun deposition, direct current electroplating, high frequency sputtering, and reactive sputtering. In this research, ITO films were grown on glass substrates by using a radio-frequency (RF) magnetron sputtering method. In order to achieve a high transmittance and a low resistivity, we examined the various film deposition conditions, such as substrate temperature, working pressure, annealing temperature, and deposition time. Next, in order to improve the surface quality of the ITO thin films, we performed a chemical mechanical polishing (CMP) with different process parameters and compared the electrical and the optical properties of the polished ITO thin films. The best CMP conditions with a high removal rate, low nonuniformity, low resistivity and high transmittance were as follows: platen speed, head speed, polishing time, and slurry flow rate of 30 rpm, 30 rpm, 60 sec, and 60 ml/min, respectively.

  12. High-speed deposition of protective films of aluminium oxide by the method of reactive magnetron sputtering

    International Nuclear Information System (INIS)

    Bugaev, S.P.; Zakhrov, A.N.; Ladyzhenskii, O.P.; Sochugov, M.S.

    2001-01-01

    The high optical characteristics of aluminium films made them attractive for different functional and decorative applications. It is well-known that the corrosion resistance of alloying is determined by the presence of the oxide film on its surface, but on the aluminium films, deposited by vacuum methods, the resistance is extremely low resulting in the relatively rapid failure of the coating. At present, there is a large number of methods of depositing the films of aluminium oxide. In most cases, it is recommended to use reactive magnetron sputtering of an aluminium target in a magnetron spraying system (MSS) using direct current, on dispersion of the target of aluminium oxide in a high-frequency MSS

  13. Computer investigations of the influences of magnets for magnetron-sputtering

    International Nuclear Information System (INIS)

    Knotek, O.; Loeffler, F.; Schnaut, U.; Guan, W.

    1993-01-01

    For a long time PVD (Physical-Vapour-Deposition) technology has been applied in various modern technical fields, owing to the wide range of possible coating materials whose potential is virtually unlimited. Besides electronic, optical and decorative applications for PVD films, hard films, in particular, have been widely applied for tool coatings which play important roles for the resistance against wear and corrosion. The MSIP (Magnetron-Sputter-Ion-Plating) coating process is one of the PVD-processes, providing 1) relatively high deposition rates, 2) large deposition areas, and 3) low substrate heating. The magnetron behind the target influences the distribution of the electrons moving in the plasma and the space between the cathode and anode, thus the distribution of the ions impinging on the surface of the target. Since the electrons are distributed unevenly in front of the target, the working gas atoms are therefore unevenly ionized in the plasma and the ions also unevenly bombard the target surface and the erosion of the target surface is uneven. Therefore the investigations of the magnetic field in the MSIP are very important for the optimization of the deposition process and the usage of the target. Generally, the accurate calculations or measurements of the direction and strength of the magnetic field (magnetic induction or magnetic flux density vector B) is difficult in comparison to measurements of the electrical field, because vector B is a vector with varying direction and magnitude. In this paper, it is shown that a magnetic field of a cylindrical magnetron in MSIP-equipment can be quickly simulated through a simple model and the distribution of the field is discussed. (orig.)

  14. Small grain size zirconium-based coatings deposited by magnetron sputtering at low temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Jimenez, O., E-mail: omar.jimenez.udg@gmail.com [Departamento de Ingeniería de Proyectos, CUCEI, Universidad de Guadalajara, AP 307, CP 45101 Zapopan, Jal (Mexico); Department of Materials Science and Engineering, The University of Sheffield, Sheffield S1 3JD (United Kingdom); Audronis, M.; Leyland, A. [Department of Materials Science and Engineering, The University of Sheffield, Sheffield S1 3JD (United Kingdom); Flores, M.; Rodriguez, E. [Departamento de Ingeniería de Proyectos, CUCEI, Universidad de Guadalajara, AP 307, CP 45101 Zapopan, Jal (Mexico); Kanakis, K.; Matthews, A. [Department of Materials Science and Engineering, The University of Sheffield, Sheffield S1 3JD (United Kingdom)

    2015-09-30

    Hard, partly amorphous, ZrTiB(N) coatings were deposited by Physical Vapour Deposition (PVD) onto (111) silicon wafers at low substrate temperatures of 85 and 110 °C using Closed Field Unbalanced Magnetron Sputtering. A segmented rectangular sputter target composed of three pieces (Zr/TiB{sub 2}/Zr) was used as the source of evaporation of coating components. Two different substrate biases (i.e. floating potential and − 50 V) and N{sub 2} reactive-gas flow rates of 2, 4 and 6 sccm were employed as the main deposition parameter variables. The chemical composition, structure, morphology and mechanical properties were investigated using a variety of analytical techniques such as Glow-Discharge Optical Emission Spectroscopy, cross-sectional Scanning Electron Microscopy (SEM), Glancing Angle X-ray Diffraction (GAXRD) and nanoindentation. With other parameters fixed, coating properties were found to be dependent on the substrate negative bias and nitrogen flow rate. Linear scan profiles and SEM imaging revealed that all coatings were smooth, dense and featureless (in fracture cross section) with no apparent columnar morphology or macro-defects. GAXRD structural analysis revealed that mostly metallic phases were formed for coatings containing no nitrogen, whereas a solid solution (Zr,Ti)N single phase nitride was found in most of the reactively deposited coatings — exhibiting a very small grain size due to nitrogen and boron grain refinement effects. Hardness values from as low as 8.6 GPa up to a maximum of 25.9 GPa are related mainly to solid solution strengthening effects. The measured elastic moduli correlated with the trends in hardness behaviour; values in the range of 120–200 GPa were observed depending on the selected deposition parameters. Also, high H/E values (> 0.1) were achieved with several of the coatings.

  15. Megavoltage planar and cone-beam imaging with low-Z targets: dependence of image quality improvement on beam energy and patient separation.

    Science.gov (United States)

    Robar, James L; Connell, Tanner; Huang, Weihong; Kelly, Robin G

    2009-09-01

    The purpose of this study is to investigate the improvement of megavoltage planar and cone-beam CT (CBCT) image quality with the use of low atomic number (Z) external targets in the linear accelerator. In this investigation, two experimental megavoltage imaging beams were generated by using either 3.5 or 7.0 MeV electrons incident on aluminum targets installed above the level of the carousel in a linear accelerator (2100EX, Varian Medical, Inc., Palo Alto, CA). Images were acquired using an amorphous silicon detector panel. Contrast-to-noise ratio (CNR) in planar and CBCT images was measured as a function of dose and a comparison was made between the imaging beams and the standard 6 MV therapy beam. Phantoms of variable diameter were used to examine the loss of contrast due to beam hardening. Porcine imaging was conducted to examine qualitatively the advantages of the low-Z target approach in CBCT. In CBCT imaging CNR increases by factors as high as 2.4 and 4.3 for the 7.0 and 3.5 MeV/Al beams, respectively, compared to images acquired with 6 MV. Similar factors of improvement are observed in planar imaging. For the imaging beams, beam hardening causes a significant loss of the contrast advantage with increasing phantom diameter; however, for the 3.5 MeV/Al beam and a phantom diameter of 25 cm, a contrast advantage remains, with increases of contrast by factors of 1.5 and 3.4 over 6 MV for bone and lung inhale regions, respectively. The spatial resolution is improved slightly in CBCT images for the imaging beams. CBCT images of a porcine cranium demonstrate qualitatively the advantages of the low-Z target approach, showing greater contrast between tissues and improved visibility of fine detail. The use of low-Z external targets in the linear accelerator improves megavoltage planar and CBCT image quality significantly. CNR may be increased by a factor of 4 or greater. Improvement of the spatial resolution is also apparent.

  16. A Plasma Lens for Magnetron Sputtering

    International Nuclear Information System (INIS)

    Anders, Andre; Brown, Jeff

    2010-01-01

    A plasma lens, consisting of a solenoid and potential-defining ring electrodes, has been placed between a magnetron and substrates to be coated. Photography reveals qualitative information on excitation, ionization, and the transport of plasma to the substrate.

  17. [Effects of magnetron sputtered ZrN on the bonding strength of titanium porcelain].

    Science.gov (United States)

    Zhou, Shu; Zhang, Wen-yan; Guang, Han-bing; Xia, Yang; Zhang, Fei-min

    2009-04-01

    To investigate the effect of magnetron sputtered ZrN on the bonding strength between a low-fusing porcelain (Ti/Vita titankeramik system) and commercially pure cast titanium. Sixteen specimens were randomly assigned to test group and control group (n=8). The control group received no surface treated. Magnetron sputtered ZrN film was deposited on the surface of specimens in the test group. Then the sixteen titanium-porcelain specimens were prepared in a rectangular shape and went through three-point bending test on a universal test machine. The bond strength of Ti/porcelain was recorded. The phase composition of the specimens was analyzed using X-ray diffraction (XRD). The interface at titanium and porcelain and the titanium surface after debonding were observed with a scanning electron microscopy (SEM) and analyzed using energy depressive spectrum (EDS). New phase of ZrN was found with XRD in the test group. Statistical analysis showed higher bond strength following ZrN surface treatment in the test group [(45.991+/-0.648) MPa] than that in the control group [(29.483+/-1.007) MPa] (P=0.000). Bonded ceramic could be observed in test group, the amount of bonded ceramic was more than that in the control group. No obvious bonded ceramic in control group was found. Magnetron sputtered ZrN can improve bond strength of Ti/Vita titankeramik system significantly.

  18. Planar Circularly Symmetric Electromagnetic Band-Gap Antennas for Low Cost High Performance Integrated Antennas

    NARCIS (Netherlands)

    Neto, A.; LLombart, N.; Gerini, G.; Maagt, P.J. de

    2009-01-01

    The use of Planar Circularly Symmetric (PCS) Electromagnetic Band-Gap (EBG) structures for optimizing the performances of single antenna elements and arrays is been discussed. The key advantage of using this sort of super structures is that they are planar and thus very cheap to manufacture with

  19. Planar circularly symmetric Electromagnetic Band-Gap antennas for low cost high performance integrated antennas

    NARCIS (Netherlands)

    Neto, A.; Llombart, N.; Gerini, G.; de Maagt, P.J.I.

    2009-01-01

    The use of planar circularly symmetric (PCS) electromagnetic band-gap (EBG) structures for optimizing the performances of single antenna elements and arrays is been discussed. The key advantage of using this sort of super structures is that they are planar and thus very cheap to manufacture with

  20. 49 CFR 192.623 - Maximum and minimum allowable operating pressure; Low-pressure distribution systems.

    Science.gov (United States)

    2010-10-01

    ... distribution systems. (a) No person may operate a low-pressure distribution system at a pressure high enough to...) No person may operate a low pressure distribution system at a pressure lower than the minimum... 49 Transportation 3 2010-10-01 2010-10-01 false Maximum and minimum allowable operating pressure...

  1. Investigation of low pressure ES-SAGD

    Energy Technology Data Exchange (ETDEWEB)

    Ivory, J.; Zheng, R.; Nasr, T.; Deng, X.; Beaulieu, G.; Heck, G. [Alberta Research Council, Edmonton, AB (Canada)

    2008-10-15

    This paper described a scaled model experiment conducted to investigate the effectiveness of expanding solvent steam assisted gravity drainage (ES-SAGD) processes at low pressures. Lower SAGD pressures typically result in reduced oil production as a result of correspondingly lower steam temperatures. However, lower pressures may also result in a reduced steam to oil ratio (SOR) and a higher vaporization heat. Steam was injected into an injection well at 33 cm{sup 3} per minute and in a production well at 31 cm{sup 3} per minute. Steam and solvents were then co-injected into the injection well at a temperature of 206 degrees C. The experiment was history-matched and a parametric analysis was conducted using a simulation tool. The 2-D and 3-D field-scale simulations investigated the impact of operating pressures, injection rates; sub-cool; oil and gas phase diffusion and dispersion; live oil versus dead oil performance; and the use of drawdown when oil rates declined. Low pressure ES-SAGD was then compared with low-pressure SAGD. Results of the study suggested that production pressures, sub-cool and solvent concentrations are important parameters in ES-SAGD processes. At 1500 kPa production pressure and 10 degrees C sub-cool, the co-injection of solvent with steam increased average oil rates by 15 per cent more than the SAGD process. SOR was also reduced. 6 refs., 8 tabs., 20 figs.

  2. Applying RF Magnetron sputtering to prepare ZnO thin films and their characterization

    International Nuclear Information System (INIS)

    Saad, M.; Kassis, A.

    2009-05-01

    ZnO thin films were prepared using Rf magnetron sputtering under several preparation conditions (different values of deposition pressure, Rf power, substrate temperature). The optical properties of these films were investigated by measuring their transmission in the spectral range (300-1000 nm), and the electrical properties were investigated by measuring their electrical resistance. Results have been discussed in terms of the modified Thornton model for sputtered thin metal oxide films. Preparation conditions for depositing the highly resistive transparent i-ZnO buffer layer and the highly conducting transparent n-ZnO window layer for solar cells were proposed. (author)

  3. Planar and non-planar nucleus-acoustic shock structures in self-gravitating degenerate quantum plasma systems

    Science.gov (United States)

    Zaman, D. M. S.; Amina, M.; Dip, P. R.; Mamun, A. A.

    2017-11-01

    The basic properties of planar and non-planar (spherical and cylindrical) nucleus-acoustic (NA) shock structures (SSs) in a strongly coupled self-gravitating degenerate quantum plasma system (containing strongly coupled non-relativistically degenerate heavy nuclear species, weakly coupled non-relativistically degenerate light nuclear species, and inertialess non-/ultra-relativistically degenerate electrons) have been investigated. The generalized quantum hydrodynamic model and the reductive perturbation method have been used to derive the modified Burgers equation. It is shown that the strong correlation among heavy nuclear species acts as the source of dissipation and is responsible for the formation of the NA SSs with positive (negative) electrostatic (self-gravitational) potential. It is also observed that the effects of non-/ultra-relativistically degenerate electron pressure, dynamics of non-relativistically degenerate light nuclear species, spherical geometry, etc., significantly modify the basic features of the NA SSs. The applications of our results in astrophysical compact objects like white dwarfs and neutron stars are briefly discussed.

  4. Growth of Ge/Si(100) Nanostructures by Radio-Frequency Magnetron Sputtering: the Role of Annealing Temperature

    Institute of Scientific and Technical Information of China (English)

    ALIREZA Samavati; S. K. Ghoshal; Z. Othaman

    2012-01-01

    Surface morphologies of Ge islands deposited on Si(100) substrates are characterized and their optical properties determined.Samples are prepared by rf magnetron sputtering in a high-vacuum chamber and are annealed at 600℃,700℃ and 800℃ for 2 min at nitrogen ambient pressure.Atomic force microscopy,field emission scanning electron microscopy,visible photoluminescence (PL) and energy dispersive x-ray spectroscopy are employed.The results for the annealing temperature-dependent sample morphology and the optical properties are presented.The density,size and roughness are found to be strongly influenced by the annealing temperature.A red shift of ~0.29 eV in the PL peak is observed with increasing annealing temperature.%Surface morphologies of Ge islands deposited on Si(100) substrates are characterized and their optical properties determined. Samples are prepared by rf magnetron sputtering in a high-vacuum chamber and are annealed at 600℃, 700℃ and 800℃ for 2 min at nitrogen ambient pressure. Atomic force microscopy, field emission scanning electron microscopy, visible photoluminescence (PL) and energy dispersive x-ray spectroscopy are employed. The results for the annealing temperature-dependent sample morphology and the optical properties are presented. The density, size and roughness are found to be strongly influenced by the annealing temperature. A red shift of ~0.29 eV in the PL peak is observed with increasing annealing temperature.

  5. A novel ultra-planar, long-stroke and low-voltage piezoelectric micromirror

    Science.gov (United States)

    Bakke, Thor; Vogl, Andreas; Żero, Oleg; Tyholdt, Frode; Johansen, Ib-Rune; Wang, Dag

    2010-06-01

    A novel piston-type micromirror with a stroke of up to 20 µm at 20 V formed out of a silicon-on-insulator wafer with integrated piezoelectric actuators was designed, fabricated and characterized. The peak-to-valley planarity of a 2 mm diameter mirror was better than 15 nm, and tip-to-tip tilt upon actuation less than 30 nm. A resonance frequency of 9.8 kHz was measured. Analytical and finite element models were developed and compared to measurements. The design is based on a silicon-on-insulator wafer where the circular mirror is formed out of the handle silicon, thus forming a thick, highly rigid and ultra-planar mirror surface. The mirror plate is connected to a supporting frame through a membrane formed out of the device silicon layer. A piezoelectric actuator made of lead-zirconate-titanate (PZT) thin film is structured on top of the membrane, providing mirror deflection by deformation of the membrane. Two actuator designs were tested: one with a single ring and the other with a double ring providing bidirectional movement of the mirror. The fabricated mirrors were characterized by white light interferometry to determine the static and temporal response as well as mirror planarity.

  6. A novel ultra-planar, long-stroke and low-voltage piezoelectric micromirror

    International Nuclear Information System (INIS)

    Bakke, Thor; Vogl, Andreas; Żero, Oleg; Tyholdt, Frode; Johansen, Ib-Rune; Wang, Dag

    2010-01-01

    A novel piston-type micromirror with a stroke of up to 20 µm at 20 V formed out of a silicon-on-insulator wafer with integrated piezoelectric actuators was designed, fabricated and characterized. The peak-to-valley planarity of a 2 mm diameter mirror was better than 15 nm, and tip-to-tip tilt upon actuation less than 30 nm. A resonance frequency of 9.8 kHz was measured. Analytical and finite element models were developed and compared to measurements. The design is based on a silicon-on-insulator wafer where the circular mirror is formed out of the handle silicon, thus forming a thick, highly rigid and ultra-planar mirror surface. The mirror plate is connected to a supporting frame through a membrane formed out of the device silicon layer. A piezoelectric actuator made of lead–zirconate–titanate (PZT) thin film is structured on top of the membrane, providing mirror deflection by deformation of the membrane. Two actuator designs were tested: one with a single ring and the other with a double ring providing bidirectional movement of the mirror. The fabricated mirrors were characterized by white light interferometry to determine the static and temporal response as well as mirror planarity.

  7. Relationship between plasma parameters and film microstructure in radio frequency magnetron sputter deposition of barium strontium titanate

    Science.gov (United States)

    Panda, B.; Dhar, A.; Nigam, G. D.; Bhattacharya, D.; Ray, S. K.

    1998-01-01

    Radio frequency magnetron sputtered Ba0.8Sr0.2TiO3 thin films have been deposited on silicon and Si/SiO2/SiN/Pt substrates. The analysis of plasma discharge has been carried out using the Langmuir probe technique. Both the pressure and power have been found to influence the ion density and self-bias of the target. Introduction of oxygen into the discharge effectively decreases the ion density. The structural and electrical properties have been investigated using x-ray diffraction, atomic force microscopy of deposited films and capacitance-voltage, conductance-voltage, and current density-electric field characteristics of fabricated capacitors. The growth and orientation of the films have been found to depend upon the type of substrates and deposition temperatures. The texture in the film is promoted at a pressure 0.25 Torr with a moderately high value of ion density and low ion bombardment energy. Films deposited on Si/SiO2/SiN/Pt substrate have shown higher dielectric constant (191) and lower leakage current density (2.8×10-6 A/cm2 at 100 kV/cm) compared to that on silicon.

  8. Modeling low pressure baroreceptors and their contribution to blood pressure control

    Directory of Open Access Journals (Sweden)

    Sánchez de Zambrano, Betsy Mirley

    2016-10-01

    Full Text Available The main mechanism for blood pressure (BP control is coordinated by the central nervous system through the sympathetic and parasympathetic systems. In order to simulate this mechanism, different mathematical models are available, but they take into account only the high pressure receptors as sensing systems for BP. However, other receptors located in low pressure areas have not, as far as we know, been considered in the models described in the literature, despite their important role in the nervous BP control. This paper presents a mathematical model for the representation of low pressure receptors by means of the detection of atrial volume changes, and their contribution to immediate BP control through nervous stimulation of the heart rate. The proposed model was coupled to the sensor mechanism of a larger model. With this model it is possible to analyze the contribution and behavior of low pressure receptors, thus allowing a better understanding of this complex system under normal and pathological conditions, since it includes important variables in the immediate BP control, not included in previous models.

  9. Experimental investigation on photoelectric properties of ZAO thin film deposited on flexible substrate by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Hao, Ming [School of Mechanical Engineering and Automation, Northeastern University, 3-11 WenHua Rd., 319#, Shenyang, 110004 (China); Liu, Kun, E-mail: kliu@mail.neu.edu.cn [School of Mechanical Engineering and Automation, Northeastern University, 3-11 WenHua Rd., 319#, Shenyang, 110004 (China); Liu, Xinghua [Hubei Aerospace Industry Technology Academe Special Vehicle Technology Center, Wuhan (China); Wang, Dongyang; Ba, Dechun; Xie, Yuanhua; Du, Guangyu; Ba, Yaoshuai [School of Mechanical Engineering and Automation, Northeastern University, 3-11 WenHua Rd., 319#, Shenyang, 110004 (China)

    2016-12-01

    Highlights: • ZAO thin films were deposited on PET substrate. • A set of experimental parameters were systematically investigated. • Change rule of film photoelectric properties was obtained. • ZAO films with optimal properties were obtained at our working conditions. - Abstract: Transparent conductive ZAO (Zinc Aluminum Oxide) films on flexible substrates have a great potential for low-cost mass-production solar cells. ZAO thin films were achieved on flexible PET (polyethylene terephthalate) substrates by RF magnetron sputtering technology. The surface morphology and element content, the transmittance and the sheet resistance of the films were measured to determine the optical process parameters. The results show that the ZAO thin film shows the best parameters in terms of photoelectric performance including sputtering power, working pressure, sputtering time, substrate temperature (100 W, 1.5 Pa, 60 min, 125 °C). The sheet resistance of 510 Ω and transmittance in visible region of 92% were obtained after characterization. Surface morphology was uniform and compact with a good crystal grain.

  10. Experimental investigation on photoelectric properties of ZAO thin film deposited on flexible substrate by magnetron sputtering

    International Nuclear Information System (INIS)

    Hao, Ming; Liu, Kun; Liu, Xinghua; Wang, Dongyang; Ba, Dechun; Xie, Yuanhua; Du, Guangyu; Ba, Yaoshuai

    2016-01-01

    Highlights: • ZAO thin films were deposited on PET substrate. • A set of experimental parameters were systematically investigated. • Change rule of film photoelectric properties was obtained. • ZAO films with optimal properties were obtained at our working conditions. - Abstract: Transparent conductive ZAO (Zinc Aluminum Oxide) films on flexible substrates have a great potential for low-cost mass-production solar cells. ZAO thin films were achieved on flexible PET (polyethylene terephthalate) substrates by RF magnetron sputtering technology. The surface morphology and element content, the transmittance and the sheet resistance of the films were measured to determine the optical process parameters. The results show that the ZAO thin film shows the best parameters in terms of photoelectric performance including sputtering power, working pressure, sputtering time, substrate temperature (100 W, 1.5 Pa, 60 min, 125 °C). The sheet resistance of 510 Ω and transmittance in visible region of 92% were obtained after characterization. Surface morphology was uniform and compact with a good crystal grain.

  11. Combined application of FBG and PZT sensors for plantar pressure monitoring at low and high speed walking.

    Science.gov (United States)

    Suresh, R; Bhalla, S; Singh, C; Kaur, N; Hao, J; Anand, S

    2015-01-01

    Clinical monitoring of planar pressure is vital in several pathological conditions, such as diabetes, where excess pressure might have serious repercussions on health of the patient, even to the extent of amputation. The main objective of this paper is to experimentally evaluate the combined application of the Fibre Bragg Grating (FBG) and the lead zirconate titanate (PZT) piezoceramic sensors for plantar pressure monitoring during walk at low and high speeds. For fabrication of the pressure sensors, the FBGs are embedded within layers of carbon composite material and stacked in an arc shape. From this embedding technique, average pressure sensitivity of 1.3 pm/kPa and resolution of nearly 0.8 kPa is obtained. These sensors are found to be suitable for measuring the static and the low-speed walk generated foot pressure. Simultaneously, PZT patches of size 10 × 10 × 0.3 mm were used as sensors, utilizing the d_{33} (thickness) coupling mode. A sensitivity of 7.06 mV/kPa and a pressure resolution of 0.14 kPa is obtained from these sensors, which are found to be suitable for foot pressure measurement during high speed walking and running. Both types of sensors are attached to the underside of the sole of commercially available shoes. In the experiments, a healthy male subject walks/runs over the treadmill wearing the fabricated shoes at various speeds and the peak pressure is measured using both the sensors. Commercially available low-cost hardware is used for interrogation of the two sensor types. The test results clearly show the feasibility of the FBG and the PZT sensors for measurement of plantar pressure. The PZT sensors are more accurate for measurement of pressure during walking at high speeds. The FBG sensors, on the other hand, are found to be suitable for static and quasi-dynamic (slow walking) conditions. Typically, the measured pressure varied from 400 to 600 kPa below the forefoot and 100 to 1000 kPa below the heel as the walking speed varied from 1

  12. Two-dimensional spatial survey of the plasma potential and electric field in a pulsed bipolar magnetron discharge

    International Nuclear Information System (INIS)

    Vetushka, A.; Karkari, S.K.; Bradley, J.W.

    2004-01-01

    Emissive and Langmuir probe techniques have been used to obtain two-dimensional (2D) spatial maps of the plasma potential V p , electric field E, and ion trajectories in a pulsed bipolar magnetron discharge. The magnetron was pulsed at a frequency of 100 kHz, with a 50% duty cycle and operated at an argon pressure of 0.74 Pa. The pulse wave form was characterized by three distinct phases: the 'overshoot', 'reverse', and 'on' phases. In the 'on' phase of the pulse, when the cathode voltage is driven to -670 V, the 2D spatial distribution of V p has a similar form to that in dc magnetron, with significant axial and radial electric fields in the bulk plasma, accelerating ions to the sheath edge above the cathode racetrack region. During the 'overshoot' phase (duration 200 ns), V p is raised to values greater than +330 V, more than 100 V above the cathode potential, with E pointing away from the target. In the 'reverse' phase V p has a value of +45 V at all measured positions, 2 V more positive than the target potential. In this phase there is no electric field present in the plasma. In the bulk of the plasma, the results from Langmuir probe and the emissive probe are in good agreement, however, in one particular region of the plasma outside the radius of the cathode, the emissive probe measurements are consistently more positive (up to 45 V in the 'on' time). This discrepancy is discussed in terms of the different frequency response of the probes and their perturbation of the plasma. A simple circuit model of the plasma-probe system has been proposed to explain our results. A brief discussion of the effect of the changing plasma potential distribution on the operation of the magnetron is given

  13. Seed disinfection effect of atmospheric pressure plasma and low pressure plasma on Rhizoctonia solani.

    Science.gov (United States)

    Nishioka, Terumi; Takai, Yuichiro; Kawaradani, Mitsuo; Okada, Kiyotsugu; Tanimoto, Hideo; Misawa, Tatsuya; Kusakari, Shinichi

    2014-01-01

    Gas plasma generated and applied under two different systems, atmospheric pressure plasma and low pressure plasma, was used to investigate the inactivation efficacy on the seedborne pathogenic fungus, Rhizoctonia solani, which had been artificially introduced to brassicaceous seeds. Treatment with atmospheric plasma for 10 min markedly reduced the R. solani survival rate from 100% to 3% but delayed seed germination. The low pressure plasma treatment reduced the fungal survival rate from 83% to 1.7% after 10 min and the inactivation effect was dependent on the treatment time. The seed germination rate after treatment with the low pressure plasma was not significantly different from that of untreated seeds. The air temperature around the seeds in the low pressure system was lower than that of the atmospheric system. These results suggested that gas plasma treatment under low pressure could be effective in disinfecting the seeds without damaging them.

  14. Three sets of crystallographic sub-planar structures in quartz formed by tectonic deformation

    Science.gov (United States)

    Derez, Tine; Pennock, Gill; Drury, Martyn; Sintubin, Manuel

    2016-05-01

    In quartz, multiple sets of fine planar deformation microstructures that have specific crystallographic orientations parallel to planes with low Miller-Bravais indices are commonly considered as shock-induced planar deformation features (PDFs) diagnostic of shock metamorphism. Using polarized light microscopy, we demonstrate that up to three sets of tectonically induced sub-planar fine extinction bands (FEBs), sub-parallel to the basal, γ, ω, and π crystallographic planes, are common in vein quartz in low-grade tectonometamorphic settings. We conclude that the observation of multiple (2-3) sets of fine scale, closely spaced, crystallographically controlled, sub-planar microstructures is not sufficient to unambiguously distinguish PDFs from tectonic FEBs.

  15. Low-activity 124I-PET/low-dose CT versus 99mTc-pertechnetate planar scintigraphy or 99mTc-pertechnetate single-photon emission computed tomography of the thyroid: a pilot comparison.

    Science.gov (United States)

    Darr, Andreas M; Opfermann, Thomas; Niksch, Tobias; Driesch, Dominik; Marlowe, Robert J; Freesmeyer, Martin

    2013-10-01

    The standard thyroid functional imaging method, 99mTc-pertechnetate (99mTc-PT) planar scintigraphy, has technical drawbacks decreasing its sensitivity in detecting nodules or anatomical pathology. 124I-PET, lacking these disadvantages and allowing simultaneous CT, may have greater sensitivity for these purposes. We performed a blinded pilot comparison of 124I-PET(/CT) versus 99mTc-PT planar scintigraphy or its cross-sectional enhancement, 99mTc-PT single-photon emission CT (SPECT), in characterizing the thyroid gland with benign disease. Twenty-one consecutive adults with goiter underwent low-activity (1 MBq/0.027 mCi) 124I-PET/low-dose (30 mAs) CT, 99mTc-PT planar scintigraphy, and 99mTc-PT-SPECT. Endpoints included the numbers of “hot spots” with/without central photopenia and “cold spots” detected, the proportion of these lesions with morphological correlates, the mean volume and diameter of visualized nodules, and the number of cases of lobus pyramidalis or retrosternal thyroid tissue identified. 124I-PET detected significantly more “hot spots” with/without central photopenia (P < 0.001), significantly more nodules (P < 0.001), and more “cold spots” than did 99mTc-PT planar scintigraphy or 99mTc-PT-SPECT, including all lesions seen on the 99mTc-PT modalities. Ultrasonographic correlates were found for all nodules visualized on all 3 modalities and 92.5% of nodules seen only on 124I-PET. Nodules discernible only on 124I-PET had significantly smaller mean volume or diameter (P < 0.001) than did those visualized on 99mTc-PT planar scintigraphy or 99mTc-PT-SPECT. 124I-PET(/CT) identified significantly more patients with a lobus pyramidalis (P < 0.001) or retrosternal thyroid tissue (P < 0.05). 124I-PET(/CT) may provide superior imaging of benign thyroid disease compared to planar or cross-sectional 99mTc-PT scintigraphy.

  16. Development of planar SOE/SOFC reversible cell

    International Nuclear Information System (INIS)

    Kusunoki, A.; Matsubara, H.; Kikuoka, Y.; Yanagi, C.; Kugimiya, K.; Yoshino, M.; Tokura, M.; Watanabe, K.; Ueda, S.; Sumi, M.; Miyamoto, H.; Tokunaga, S.

    1993-01-01

    A new energy storage system using SOE/SOFC (solid oxide electrolysis-solid oxide fuel cells) reversible cells is presented, where a unit cell works as a fuel cell during a period of high electric power demand and alternately works as an electrolysis cell during a period of low power demand. A planar cell configuration is used which allows for a compact and low cost energy storage and load leveling system for power stations. Tests were performed to verify the reversibility of the planar cell, at 1000 deg C, with YSZ (Yttria stabilized zirconia) as the solid electrolyte, to improve the cell performance by reducing the overvoltage in electrolysis, and to obtain fundamental characteristics of a reversible cell. 3 figs

  17. Turnover of texture in low rate sputter-deposited nanocrystalline molybdenum films

    International Nuclear Information System (INIS)

    Druesedau, T.P.; Klabunde, F.; Loehmann, M.; Hempel, T.; Blaesing, J.

    1997-01-01

    The crystallite size and orientation in molybdenum films prepared by magnetron sputtering at a low rate of typical 1 (angstrom)s and a pressure of 0.45 Pa was investigated by X-ray diffraction and texture analysis. The surface topography was studied using atomic force microscopy. Increasing the film thickness from 20 nm to 3 microm, the films show a turnover from a (110) fiber texture to a (211) mosaic-like texture. In the early state of growth (20 nm thickness) the development of dome-like structures on the surface is observed. The number of these structures increases with film thickness, whereas their size is weakly influenced. The effect of texture turnover is reduced by increasing the deposition rate by a factor of six, and it is absent for samples mounted above the center of the magnetron source. The effect of texture turnover is related to the bombardment of the films with high energetic argon neutrals resulting from backscattering at the target under oblique angle and causing resputtering. Due to the narrow angular distribution of the reflected argon, bombardment of the substrate plane is inhomogeneous and only significant for regions close to the erosion zone of the magnetron

  18. TMX-U neutral pressure measurement diagnostic systems

    International Nuclear Information System (INIS)

    Pickles, W.L.; Allen, S.L.; Hill, D.N.; Hunt, A.L.; Simonen, T.C.

    1984-01-01

    The Tandem Mirror Experiment-Upgrade (TMX-U) has a large and complex system of Baird Alpert, magnetron, and Penning gauges, in addition to mass spectrometers (RGA), all of which measure neutral pressures in the many internal regions of TMX-U. These pressure measurements are used as part of the confinement physics data base as well as for management of the TMX-U vacuum system. Dynamic pressures are modeled by a coupled-volumes simulation code, which includes wall reflus, getter pumping, and plasma pumping

  19. Mechanical and tribological properties of crystalline aluminum nitride coatings deposited on stainless steel by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Choudhary, R.K., E-mail: crupeshbarc@gmail.com [Materials Processing Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Mishra, S.C.; Mishra, P. [Materials Processing Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Limaye, P.K. [Refuelling Technology Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Singh, K. [Fusion Reactor Materials Section, Bhabha Atomic Research Centre, Mumbai 400085 (India)

    2015-11-15

    Aluminum nitride (AlN) coating is a potential candidate for addressing the problems of MHD pressure drop, tritium permeation and liquid metal corrosion of the test blanket module of fusion reactor. In this work, AlN coatings were grown on stainless steel by magnetron sputtering. Grazing incidence X-ray diffraction measurement revealed that formation of mixed phase (wurtzite and rock salt) AlN was favored at low discharge power and substrate negative biasing. However, at sufficiently high discharge power and substrate bias, (100) oriented wurtzite AlN was obtained. Secondary ion mass spectroscopy showed presence of oxygen in the coatings. The highest value of hardness and Young's modulus were 14.1 GPa and 215 GPa, respectively. Scratch test showed adhesive failure at a load of about 20 N. Wear test showed improved wear resistance of the coatings obtained at higher substrate bias. - Highlights: • Crystalline AlN coatings obtained on stainless steel by reactive sputtering. • Wurtzite AlN formed at higher discharge power and higher substrate biasing. • Mixture of wurtzite and rock salt AlN formed at low power and low biasing. • Substrate negative biasing improved adhesion of AlN coatings. • Substrate negative biasing improved wear resistance and hardness of AlN coatings.

  20. Mechanical and tribological properties of crystalline aluminum nitride coatings deposited on stainless steel by magnetron sputtering

    International Nuclear Information System (INIS)

    Choudhary, R.K.; Mishra, S.C.; Mishra, P.; Limaye, P.K.; Singh, K.

    2015-01-01

    Aluminum nitride (AlN) coating is a potential candidate for addressing the problems of MHD pressure drop, tritium permeation and liquid metal corrosion of the test blanket module of fusion reactor. In this work, AlN coatings were grown on stainless steel by magnetron sputtering. Grazing incidence X-ray diffraction measurement revealed that formation of mixed phase (wurtzite and rock salt) AlN was favored at low discharge power and substrate negative biasing. However, at sufficiently high discharge power and substrate bias, (100) oriented wurtzite AlN was obtained. Secondary ion mass spectroscopy showed presence of oxygen in the coatings. The highest value of hardness and Young's modulus were 14.1 GPa and 215 GPa, respectively. Scratch test showed adhesive failure at a load of about 20 N. Wear test showed improved wear resistance of the coatings obtained at higher substrate bias. - Highlights: • Crystalline AlN coatings obtained on stainless steel by reactive sputtering. • Wurtzite AlN formed at higher discharge power and higher substrate biasing. • Mixture of wurtzite and rock salt AlN formed at low power and low biasing. • Substrate negative biasing improved adhesion of AlN coatings. • Substrate negative biasing improved wear resistance and hardness of AlN coatings.

  1. Synthesis of ReN3 Thin Films by Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    G. Soto

    2014-01-01

    Full Text Available In this work ReNx films were prepared by reactive magnetron sputtering at room temperature and deposited on a silicon wafer. It was found that the diffractograms of the nitrogen-rich rhenium film are consistent with those produced by high-pressure high-temperature methods, under the assumption that the film is oriented on the substrate. Using density functional calculations it was found that the composition of this compound could be ReN3, instead of ReN2, as stated on previous works. The ReN3 compound fits in the Ama2 (40 orthorhombic space group, and due to the existence of N3 anions between Re layers it should be categorized as an azide. The material is exceptionally brittle and inherently unstable under indentation testing.

  2. Magnetron with smooth anode. Statistical theory and ordered oscillations; Magnetron a anode lisse. Theorie statistique et oscillations ordonnees

    Energy Technology Data Exchange (ETDEWEB)

    Coste, J.

    1961-03-15

    We have to investigate the equilibrium regime that appears between a hot cathode and the electronic cloud that is confined around the cathode by a magnetic field parallel to its axis. The densities being high enough to involve the effect of space charge. The challenge of the magnetron theory is to face 2 issues: first the structure of the electronic cloud in a diode submitted to a magnetic field and secondly the oscillations that are likely to appear in this cloud. In this work we have made 2 attempts to clarify the situation, we have extended the classical theory of the static charge of space through a study of its oscillation modes on one hand and on the other hand we have tackled the issue of the structure of the electronic cloud with the tool of statistics. This document is divided into 2 chapters. In the first chapter we present a static study of the magnetron in which we take a statistical approach deliberately. We give answers to the issue of the thermodynamical equilibrium of the electronic cloud and we have found a mode very close to the Brillouin mode. The statistical approach has made us discuss the boundary conditions on the cathode, it means the coupling between the cathode and the electronic cloud. In the second chapter we present the theoretical study of the oscillations in a magnetron operating in the Brillouin mode. The resonances that appear in experimental data stay difficult to explain.

  3. Dielectric properties of DC reactive magnetron sputtered Al2O3 thin films

    International Nuclear Information System (INIS)

    Prasanna, S.; Mohan Rao, G.; Jayakumar, S.; Kannan, M.D.; Ganesan, V.

    2012-01-01

    Alumina (Al 2 O 3 ) thin films were sputter deposited over well-cleaned glass and Si substrates by DC reactive magnetron sputtering under various oxygen gas pressures and sputtering powers. The composition of the films was analyzed by X-ray photoelectron spectroscopy and an optimal O/Al atomic ratio of 1.59 was obtained at a reactive gas pressure of 0.03 Pa and sputtering power of 70 W. X-ray diffraction results revealed that the films were amorphous until 550 °C. The surface morphology of the films was studied using scanning electron microscopy and the as-deposited films were found to be smooth. The topography of the as-deposited and annealed films was analyzed by atomic force microscopy and a progressive increase in the rms roughness of the films from 3.2 nm to 4.53 nm was also observed with increase in the annealing temperature. Al-Al 2 O 3 -Al thin film capacitors were then fabricated on glass substrates to study the effect of temperature and frequency on the dielectric property of the films. Temperature coefficient of capacitance, AC conductivity and activation energy were determined and the results are discussed. - Highlights: ► Al 2 O 3 thin films were deposited by DC reactive magnetron sputtering. ► The films were found to be amorphous up to annealing temperature of 550 C. ► An increase in rms roughness of the films was observed with annealing. ► Al-Al 2 O 3 -Al thin film capacitors were fabricated and dielectric constant was 7.5. ► The activation energy decreased with increase in frequency.

  4. Simulation of low pressure water hammer

    Science.gov (United States)

    Himr, D.; Habán, V.

    2010-08-01

    Numerical solution of water hammer is presented in this paper. The contribution is focused on water hammer in the area of low pressure, which is completely different than high pressure case. Little volume of air and influence of the pipe are assumed in water, which cause sound speed change due to pressure alterations. Computation is compared with experimental measurement.

  5. Decorative black TiCxOy film fabricated by DC magnetron sputtering without importing oxygen reactive gas

    Science.gov (United States)

    Ono, Katsushi; Wakabayashi, Masao; Tsukakoshi, Yukio; Abe, Yoshiyuki

    2016-02-01

    Decorative black TiCxOy films were fabricated by dc (direct current) magnetron sputtering without importing the oxygen reactive gas into the sputtering chamber. Using a ceramic target of titanium oxycarbide (TiC1.59O0.31), the oxygen content in the films could be easily controlled by adjustment of total sputtering gas pressure without remarkable change of the carbon content. The films deposited at 2.0 and 4.0 Pa, those are higher pressure when compared with that in conventional magnetron sputtering, showed an attractive black color. In particular, the film at 4.0 Pa had the composition of TiC1.03O1.10, exhibited the L* of 41.5, a* of 0.2 and b* of 0.6 in CIELAB color space. These values were smaller than those in the TiC0.29O1.38 films (L* of 45.8, a* of 1.2 and b* of 1.2) fabricated by conventional reactive sputtering method from the same target under the conditions of gas pressure of 0.3 Pa and optimized oxygen reactive gas concentration of 2.5 vol.% in sputtering gas. Analysis of XRD and XPS revealed that the black film deposited at 4.0 Pa was the amorphous film composed of TiC, TiO and C. The adhesion property and the heat resisting property were enough for decorative uses. This sputtering process has an industrial advantage that the decorative black coating with color uniformity in large area can be easily obtained by plain operation because of unnecessary of the oxygen reactive gas importing which is difficult to be controlled uniformly in the sputtering chamber.

  6. Ultra smooth NiO thin films on flexible plastic (PET) substrate at room temperature by RF magnetron sputtering and effect of oxygen partial pressure on their properties

    International Nuclear Information System (INIS)

    Nandy, S.; Goswami, S.; Chattopadhyay, K.K.

    2010-01-01

    Transparent p-type nickel oxide thin films were grown on polyethylene terephthalate (PET) and glass substrates by RF magnetron sputtering technique in argon + oxygen atmosphere with different oxygen partial pressures at room temperature. The morphology of the NiO thin films grown on PET and glass substrates was studied by atomic force microscope. The rms surface roughnesses of the films were in the range 0.63-0.65 nm. These ultra smooth nanocrystalline NiO thin films are useful for many applications. High resolution transmission electron microscopic studies revealed that the grains of NiO films on the highly flexible PET substrate were purely crystalline and spherical in shape with diameters 8-10 nm. XRD analysis also supported these results. NiO films grown on the PET substrates were found to have better crystalline quality with fewer defects than those on the glass substrates. The sheet resistances of the NiO films deposited on PET and glass substrates were not much different; having values 5.1 and 5.3 kΩ/□ and decreased to 3.05, 3.1 kΩ/□ respectively with increasing oxygen partial pressure. The thicknesses of the films on both substrates were ∼700 nm. It was also noted that further increase in oxygen partial pressure caused increase in resistivity due to formation of defects in NiO.

  7. Improvement of dielectric properties of BLT thin films deposited by magnetron sputtering

    International Nuclear Information System (INIS)

    Besland, M P; Barroy, P R J; Richard-Plouet, M; Tessier, P Y; Brohan, L; Djouadi, M A; Borderon, C; Tacon, S Le; Averty, D; Gundel, H W

    2008-01-01

    Well crystallized BLT thin films were deposited by RF magnetron sputtering using a target of Aurivillius phase Bi 3.25 La 0.75 Ti 3 O 12 (BLT 0,75 ), elaborated in our institute. RF sputtering experiments were performed at room temperature with an argon/oxygen mixture, in a pressure range of 20-50 mTorr. Optimisation of the plasma parameters, namely deposition pressure, RF power and oxygen content in the gas phase, allows obtaining BLT films with a chemical composition close to Bi 3.25 La 0.75 Ti 3 O 12 . After ex-situ annealing under oxygen atmosphere at 650 deg. C, BLT films deposited on Pt/TiO 2 /SiO 2 /Si (multilayer) substrates exhibit well defined rod-like grains morphology. A two step deposition process appeared to be necessary in order to reach satisfying dielectric properties. The effect of the plasma parameters on the chemical composition and electrical properties are presented and discussed

  8. Shock tubes: compressions in the low pressure chamber

    International Nuclear Information System (INIS)

    Schins, H.; Giuliani, S.

    1986-01-01

    The gas shock tube used in these experiments consists of a low pressure chamber and a high pressure chamber, divided by a metal-diaphragm-to-rupture. In contrast to the shock mode of operation, where incident and reflected shocks in the low pressure chamber are studied which occur within 3.5 ms, in this work the compression mode of operation was studied, whose maxima occur (in the low pressure chamber) about 9 ms after rupture. Theoretical analysis was done with the finite element computer code EURDYN-1M, where the computation was carried out to 30 ms

  9. Low pressure lithium condensation

    International Nuclear Information System (INIS)

    Wadkins, R.P.; Oh, C.H.

    1985-01-01

    A low pressure experiment to evaluate the laminar film condensation coefficients of lithium was conducted. Some thirty-six different heat transfer tests were made at system pressures ranging from 1.3 to 26 Pa. Boiled lithium was condensed on the inside of a 7.6-cm (ID), 409 stainless-steel pipe. Condensed lithium was allowed to reflux back to the pool boiling region below the condensing section. Fourteen chromel/alumel thermocouples were attached in various regions of the condensing section. The thermocouples were initially calibrated with errors of less than one degree Celsius

  10. Effect of sputter pressure on magnetotransport properties of FePt nanocomposites

    Energy Technology Data Exchange (ETDEWEB)

    Mi, Shu, E-mail: mishu@buaa.edu.cn; Liu, Rui, E-mail: liurui1987@buaa.edu.cn; Li, Yuanyuan, E-mail: buaaliyuan@163.com; Ye, Jun, E-mail: yejun@iphy.ac.cn; Xie, Yong, E-mail: xiey@buaa.edu.cn; Chen, Ziyu, E-mail: chenzy@buaa.edu.cn

    2016-04-01

    FePt films were prepared by magnetron sputtering deposition using Ar as the sputtering gas under different working pressures (0.3–0.7 Pa). The effect of sputtering gas pressure on the microstructure, magnetic, and magnetoresistance properties has been investigated. The results show that the crystallization of FePt films is strongly dependent on the Ar sputter pressure. With the decrease of Ar working pressures, the fct phase forms and the coercivity (Hc) of FePt films rises under the same annealing temperature. As a result, the giant magnetoresistance (GMR) increases by 20% at the room temperature. At 0.7 Pa, the anisotropy magnetoresistance (AMR) can be observed clearly at a low field. However, as the Ar pressure decreases, the increase of GMR leads to a degradation of AMR effect. We believe that the improvement of GMR effect results from the increase of magnetic anisotropy and spin polarization in the process of transformation from the soft magnetic fcc phase to the hard magnetic fct phase. - Highlights: • FePt films were sputtered under different Ar working pressures. • The low Ar pressure promotes the formation of L1{sub 0} phase. • The Hc of FePt films enlarges with the reduction of Ar pressure. • As the Ar pressure decreases, the MR increases by 20%. • The total MR results from the competition of GMR and AMR.

  11. Effect of sputter pressure on magnetotransport properties of FePt nanocomposites

    International Nuclear Information System (INIS)

    Mi, Shu; Liu, Rui; Li, Yuanyuan; Ye, Jun; Xie, Yong; Chen, Ziyu

    2016-01-01

    FePt films were prepared by magnetron sputtering deposition using Ar as the sputtering gas under different working pressures (0.3–0.7 Pa). The effect of sputtering gas pressure on the microstructure, magnetic, and magnetoresistance properties has been investigated. The results show that the crystallization of FePt films is strongly dependent on the Ar sputter pressure. With the decrease of Ar working pressures, the fct phase forms and the coercivity (Hc) of FePt films rises under the same annealing temperature. As a result, the giant magnetoresistance (GMR) increases by 20% at the room temperature. At 0.7 Pa, the anisotropy magnetoresistance (AMR) can be observed clearly at a low field. However, as the Ar pressure decreases, the increase of GMR leads to a degradation of AMR effect. We believe that the improvement of GMR effect results from the increase of magnetic anisotropy and spin polarization in the process of transformation from the soft magnetic fcc phase to the hard magnetic fct phase. - Highlights: • FePt films were sputtered under different Ar working pressures. • The low Ar pressure promotes the formation of L1 0 phase. • The Hc of FePt films enlarges with the reduction of Ar pressure. • As the Ar pressure decreases, the MR increases by 20%. • The total MR results from the competition of GMR and AMR.

  12. High-current magnetron discharge with magnetic insulation of anode

    International Nuclear Information System (INIS)

    Bizyukov, A.A.; Sereda, K.N.; Sleptsov, V.V.

    2008-01-01

    In magnetron discharge at currents higher then critical which magnitude is in the range of 15...30 A the transition from glow discharge in transverse magnetic field to arc discharge occurs. In the present time the problem of arc blowout is solved at the expense of pulse and HF power supply applying. In this paper the alternative method of limiting current of magnetron discharge increasing at the expense of increasing of discharge gap resistance by means of additional anode layer transverse magnetic field and arc current interruption by sectioning of current collector of anode surface is carrying out

  13. Analysis of Planar E+I and ER+I Transformers for Low-Voltage High-Current DC/DC Converters with Focus on Winding Losses and Leakage Inductance

    DEFF Research Database (Denmark)

    Pittini, Riccardo; Zhang, Zhe; Ouyang, Ziwei

    2012-01-01

    on winding resistance and leakage inductances which represent the main concerns related to low-voltage high-current applications. The PCB winding design has a one to one turn ratio with no interleaving between primary and secondary windings. The main goal was to determine if ER planar core could provide...... a significant advantage in terms of winding losses compared to planar E cores. Results from finite element analysis highlight that low frequency winding resistance is lower for the ER core since it is dominated by the lower mean turn length however, as the AC-resistance becomes dominating the winding eddy...... more realistic results when computing the winding AC-resistance....

  14. High-rate deposition of Ta-doped SnO2 films by reactive magnetron sputtering using a Sn–Ta metal-sintered target

    International Nuclear Information System (INIS)

    Muto, Y.; Nakatomi, S.; Oka, N.; Iwabuchi, Y.; Kotsubo, H.; Shigesato, Y.

    2012-01-01

    Ta-doped SnO 2 films were deposited on glass substrate (either unheated or heated at 200 °C) by reactive magnetron sputtering with a Sn–Ta metal-sintered target using a plasma control unit (PCU) and mid-frequency (mf, 50 kHz) unipolar pulsing. The PCU feedback system precisely controlled the flow of the reactive and sputtering gases (O 2 and Ar, respectively) by monitoring either discharge impedance or the plasma emission of the atomic O* line at 777 nm. The planar target was connected to the switching unit, which was operated in unipolar pulse mode. Power density on the target was maintained at 4.4 W cm −2 during deposition. The lowest obtained resistivity for the films deposited on heated substrate was 6.4 × 10 −3 Ωcm, where the deposition rate was 250 nm min −1 .

  15. Field emission from ZnS nanorods synthesized by radio frequency magnetron sputtering technique

    Science.gov (United States)

    Ghosh, P. K.; Maiti, U. N.; Jana, S.; Chattopadhyay, K. K.

    2006-11-01

    The field emission property of zinc sulphides nanorods synthesized in the thin film form on Si substrates has been studied. It is seen that ZnS nanorod thin films showed good field emission properties with a low-macroscopic turn-on field (2.9-6.3 V/μm). ZnS nanorods were synthesized by using radio frequency magnetron sputtering of a polycrystalline prefabricated ZnS target at a relatively higher pressure (10 -1 mbar) and at a lower substrate temperature (233-273 K) without using any catalyst. Transmission electron microscopic image showed the formation of ZnS nanorods with high aspect ratio (>60). The field emission data were analysed using Fowler-Nordhiem theory and the nearly straight-line nature of the F-N plots confirmed cold field emission of electrons. It was also found that the turn-on field decreased with the decrease of nanorod's diameters. The optical properties of the ZnS nanorods were also studied. From the measurements of transmittance of the films deposited on glass substrates, the direct allowed bandgap values have been calculated and they were in the range 3.83-4.03 eV. The thickness of the films was ˜600 nm.

  16. Ammonia Synthesis at Low Pressure.

    Science.gov (United States)

    Cussler, Edward; McCormick, Alon; Reese, Michael; Malmali, Mahdi

    2017-08-23

    Ammonia can be synthesized at low pressure by the use of an ammonia selective absorbent. The process can be driven with wind energy, available locally in areas requiring ammonia for synthetic fertilizer. Such wind energy is often called "stranded," because it is only available far from population centers where it can be directly used. In the proposed low pressure process, nitrogen is made from air using pressure swing absorption, and hydrogen is produced by electrolysis of water. While these gases can react at approximately 400 °C in the presence of a promoted conventional catalyst, the conversion is often limited by the reverse reaction, which makes this reaction only feasible at high pressures. This limitation can be removed by absorption on an ammine-like calcium or magnesium chloride. Such alkaline metal halides can effectively remove ammonia, thus suppressing the equilibrium constraints of the reaction. In the proposed absorption-enhanced ammonia synthesis process, the rate of reaction may then be controlled not by the chemical kinetics nor the absorption rates, but by the rate of the recycle of unreacted gases. The results compare favorably with ammonia made from a conventional small scale Haber-Bosch process.

  17. System transient analysis code development for low pressure and low power

    International Nuclear Information System (INIS)

    Kim, Hee Cheol

    1998-02-01

    A real time reactor system analysis code, ARTIST, based on drift flux model has been developed to investigate the transient system behavior under low pressure, low flow and low power conditions with noncondensable gas present in the system. The governing equations of the ARTIST code consist of three mass continuity equations (steam, liquid and noncondensable), two energy equations (gas and mixture) and one momentum equation (mixture) constituted with the drift flux model. The capability of ARTIST in predicting two-phase flow void distribution in the system has been validated against experimental data. The results of the ARTIST axial void distribution at low pressure and low flow, are far better than the results of both the homogeneous model of TASS code and the two-fluid model of RELAP5/MOD3 code. Also, RELAP5/MOD3 calculation shows the large amplitude of void fraction oscillations at low pressure. These results imply that interfacial momentum transfer terms in the two-fluid model formulation should be carefully constituted, especially for the low pressure condition due to the big density differences between steam and water. Thermal-hydraulic state solution scheme is developed when noncondensable gas exists. Numerical consistency and convergence of obtaining equilibrium state is tested with the ideal problems for various situations including very low partial pressure conditions. Calculated thermal-hydraulic state for each test shows consistent and expected behaviour. A new multi-layer back propagation network algorithm for calculating the departure from nucleate boiling ratio (DNBR) is developed and adopted in ARTIST code in order to have real-time DNBR evaluation by eliminating the tandem procedure of the transient DNBR calculation. The algorithm trained by different patterns generated by latin hypercube sampling method on the performance space is tested for the randomly sampled untrained data and the transient DNBR data. The uncertainty of the algorithm is

  18. Commissioning of indigenous microwave test facility for development and pilot production of 2 MW S-band magnetrons

    International Nuclear Information System (INIS)

    Shrivastava, Purushottam; Wanmode, Y.D.; Hannurkar, P.R.; Prasad, Sharda

    2005-01-01

    To have self reliance in the field of microwave devices and to have consistent supply of pulsed magnetrons for the Indian accelerator programme. CAT initiated development of 2 MW S-Band pulsed magnetrons in collaboration with CEERI, Pilani. The design, development and testing of the microwave test facilities for ageing. conditioning and performance testing of Indian magnetrons, was successfully done by CAT indigenously. After the rigorous testing. the test facility was shifted, installed and commissioned at CEERI, Pilani by CAT. Over a period of 10 years, nine prototypes were aged and tested, two magnetrons were life tested and five magnetrons under production programme have been successfully conditioned and tested. Testing of more numbers is underway. The system details. commissioning aspects are discussed, results are shown. (author)

  19. Estimating average shock pressures recorded by impactite samples based on universal stage investigations of planar deformation features in quartz - Sources of error and recommendations

    Science.gov (United States)

    Holm-Alwmark, S.; Ferrière, L.; Alwmark, C.; Poelchau, M. H.

    2018-01-01

    Planar deformation features (PDFs) in quartz are the most widely used indicator of shock metamorphism in terrestrial rocks. They can also be used for estimating average shock pressures that quartz-bearing rocks have been subjected to. Here we report on a number of observations and problems that we have encountered when performing universal stage measurements and crystallographically indexing of PDF orientations in quartz. These include a comparison between manual and automated methods of indexing PDFs, an evaluation of the new stereographic projection template, and observations regarding the PDF statistics related to the c-axis position and rhombohedral plane symmetry. We further discuss the implications that our findings have for shock barometry studies. Our study shows that the currently used stereographic projection template for indexing PDFs in quartz might induce an overestimation of rhombohedral planes with low Miller-Bravais indices. We suggest, based on a comparison of different shock barometry methods, that a unified method of assigning shock pressures to samples based on PDFs in quartz is necessary to allow comparison of data sets. This method needs to take into account not only the average number of PDF sets/grain but also the number of high Miller-Bravais index planes, both of which are important factors according to our study. Finally, we present a suggestion for such a method (which is valid for nonporous quartz-bearing rock types), which consists of assigning quartz grains into types (A-E) based on the PDF orientation pattern, and then calculation of a mean shock pressure for each sample.

  20. Stress measurements of planar dielectric elastomer actuators

    Energy Technology Data Exchange (ETDEWEB)

    Osmani, Bekim; Aeby, Elise A.; Müller, Bert [Biomaterials Science Center, University of Basel, Gewerbestrasse 14, 4123 Allschwil (Switzerland)

    2016-05-15

    Dielectric elastomer actuator (DEA) micro- and nano-structures are referred to artificial muscles because of their specific continuous power and adequate time response. The bending measurement of an asymmetric, planar DEA is described. The asymmetric cantilevers consist of 1 or 5 μm-thin DEAs deposited on polyethylene naphthalate (PEN) substrates 16, 25, 38, or 50 μm thick. The application of a voltage to the DEA electrodes generates an electrostatic pressure in the sandwiched silicone elastomer layer, which causes the underlying PEN substrate to bend. Optical beam deflection enables the detection of the bending angle vs. applied voltage. Bending radii as large as 850 m were reproducibly detected. DEA tests with electric fields of up to 80 V/μm showed limitations in electrode’s conductivity and structure failures. The actuation measurement is essential for the quantitative characterization of nanometer-thin, low-voltage, single- and multi-layer DEAs, as foreseen for artificial sphincters to efficiently treat severe urinary and fecal incontinence.

  1. Stress measurements of planar dielectric elastomer actuators

    International Nuclear Information System (INIS)

    Osmani, Bekim; Aeby, Elise A.; Müller, Bert

    2016-01-01

    Dielectric elastomer actuator (DEA) micro- and nano-structures are referred to artificial muscles because of their specific continuous power and adequate time response. The bending measurement of an asymmetric, planar DEA is described. The asymmetric cantilevers consist of 1 or 5 μm-thin DEAs deposited on polyethylene naphthalate (PEN) substrates 16, 25, 38, or 50 μm thick. The application of a voltage to the DEA electrodes generates an electrostatic pressure in the sandwiched silicone elastomer layer, which causes the underlying PEN substrate to bend. Optical beam deflection enables the detection of the bending angle vs. applied voltage. Bending radii as large as 850 m were reproducibly detected. DEA tests with electric fields of up to 80 V/μm showed limitations in electrode’s conductivity and structure failures. The actuation measurement is essential for the quantitative characterization of nanometer-thin, low-voltage, single- and multi-layer DEAs, as foreseen for artificial sphincters to efficiently treat severe urinary and fecal incontinence.

  2. Plasma diagnostics during magnetron sputtering of aluminum doped zinc oxide

    DEFF Research Database (Denmark)

    Stamate, Eugen; Crovetto, Andrea; Sanna, Simone

    2016-01-01

    Plasma parameters during magnetron sputtering of aluminum-doped zinc oxide are investigated with optical emission spectroscopy, electrostatic probes and mass spectrometry with the aim of understanding the role of negative ions of oxygen during the film growth and improving the uniformity of the f......Plasma parameters during magnetron sputtering of aluminum-doped zinc oxide are investigated with optical emission spectroscopy, electrostatic probes and mass spectrometry with the aim of understanding the role of negative ions of oxygen during the film growth and improving the uniformity...

  3. Radio frequency magnetron sputter-deposited indium tin oxide for use as a cathode in transparent organic light-emitting diode

    International Nuclear Information System (INIS)

    Chung, Choong-Heui; Ko, Young-Wook; Kim, Yong-Hae; Sohn, Choong-Yong; Hye Yong Chu; Ko Park, Sang-Hee; Lee, Jin Ho

    2005-01-01

    Indium tin oxide (ITO) films were prepared by radio frequency magnetron sputtering at room temperature, for use as a cathode in a transparent organic light-emitting diode (TOLED). To minimize damage to the TOLED by the ITO sputtering process, the target-to-substrate distance was increased to 20 cm. An ITO film deposited at the optimum oxygen partial pressure exhibited an electrical resistivity as low as 4.06 x 10 -4 Ω cm and a high optical transmittance of 91% in the visible range. The film was used as a transparent cathode for a TOLED with structure of an ITO coated glass substrate / Naphthylphenyldiamide (60 nm) / Tris-(8-hydroxyquinoline) aluminum (60 nm) / LiF (1 nm) / Al (2 nm) / Ag (8 nm) / ITO cathode (100 nm). A maximum luminance of 37,000 cd/m 2 was obtained. The device performance was comparable to a conventional OLED

  4. Magnetic properties of in-plane oriented barium hexaferrite thin films prepared by direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Xiaozhi; Yue, Zhenxing, E-mail: yuezhx@mail.tsinghua.edu.cn; Meng, Siqin; Yuan, Lixin [State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China)

    2014-12-28

    In-plane c-axis oriented Ba-hexaferrite (BaM) thin films were prepared on a-plane (112{sup ¯}0) sapphire (Al{sub 2}O{sub 3}) substrates by DC magnetron sputtering followed by ex-situ annealing. The DC magnetron sputtering was demonstrated to have obvious advantages over the traditionally used RF magnetron sputtering in sputtering rate and operation simplicity. The sputtering power had a remarkable influence on the Ba/Fe ratio, the hematite secondary phase, and the grain morphology of the as-prepared BaM films. Under 80 W of sputtering power, in-plane c-axis highly oriented BaM films were obtained. These films had strong magnetic anisotropy with high hysteresis loop squareness (M{sub r}/M{sub s} of 0.96) along the in-plane easy axis and low M{sub r}/M{sub s} of 0.03 along the in-plane hard axis. X-ray diffraction patterns and pole figures revealed that the oriented BaM films grew via an epitaxy-like growth process with the crystallographic relationship BaM (101{sup ¯}0)//α-Fe{sub 2}O{sub 3}(112{sup ¯}0)//Al{sub 2}O{sub 3}(112{sup ¯}0)

  5. Hydroxyapatite thin films synthesized by pulsed laser deposition and magnetron sputtering on PMMA substrates for medical applications

    International Nuclear Information System (INIS)

    Socol, G.; Macovei, A.M.; Miroiu, F.; Stefan, N.; Duta, L.; Dorcioman, G.; Mihailescu, I.N.; Petrescu, S.M.; Stan, G.E.; Marcov, D.A.; Chiriac, A.; Poeata, I.

    2010-01-01

    Functionalized implants represent an advanced approaching in implantology, aiming to improve the biointegration and the long-term success of surgical procedures. We report on the synthesis of hydroxyapatite (HA) thin films on polymethylmetacrylate (PMMA) substrates - used as cranio-spinal implant-type structures - by two alternative methods: pulsed laser deposition (PLD) and radio-frequency magnetron sputtering (MS). The deposition parameters were optimized in order to avoid the substrate overheating. Stoichiometric HA structures were obtained by PLD with incident laser fluences of 1.4-2.75 J/cm 2 , pressures of 30-46.66 Pa and 10 Hz pulses repetition rate. The MS depositions were performed at constant pressure of 0.3 Pa in inert and reactive atmospheres. SEM-EDS, XRD, FTIR and pull-out measurements were performed assessing the apatitic-type structure of the prepared films along with their satisfactory mechanical adhesion. Cell viability, proliferation and adhesion tests in osteosarcoma SaOs2 cell cultures were performed to validate the bioactive behaviour of the structures and to select the most favourable deposition regimes. For PLD, this requires a low fluence of 1.4 J/cm 2 , reduced pressure of water vapours and a 100 o C/4 h thermal treatment. For MS, the best results were obtained for 80% Ar + 20% O 2 reactive atmosphere at low RF power (∼75 W). Cells grown on these coatings exhibit behaviour similar to those grown on the standard borosilicate glass control: increased viability, good proliferation, and optimal cell adhesion. In vitro tests proved that HA/PMMA neurosurgical structures prepared by PLD and MS are compatible for the interaction with human bone cells.

  6. Giant Negative Piezoresistive Effect in Diamond-like Carbon and Diamond-like Carbon-Based Nickel Nanocomposite Films Deposited by Reactive Magnetron Sputtering of Ni Target

    DEFF Research Database (Denmark)

    Meškinis, Šaru Nas; Gudaitis, Rimantas; Šlapikas, Kęstutis

    2018-01-01

    deposited by either reactive HIPIMS or dc magnetron sputtering of Ni target was explained by possible clustering of the sp2-bonded carbon and/or formation of areas with the decreased hydrogen content. It was suggested that the tensile stress-induced rearrangements of these conglomerations have resulted......Piezoresistive properties of hydrogenated diamond-like carbon (DLC) and DLC-based nickel nanocomposite (DLC:Ni) films were studied in the range of low concentration of nickel nanoparticles. The films were deposited by reactive high power pulsed magnetron sputtering (HIPIMS) of Ni target, and some...... samples were deposited by direct current (dc) reactive magnetron sputtering for comparison purposes. Raman scattering spectroscopy, energy-dispersive X-ray spectrometry (EDS), and X-ray photoelectron spectroscopy (XPS) were used to study the structure and chemical composition of the films. A four...

  7. Determination of the sputter rate variation pattern of a silicon carbide target for radio frequency magnetron sputtering using optical transmission measurements

    International Nuclear Information System (INIS)

    Galvez de la Puente, G.; Guerra Torres, J.A.; Erlenbach, O.; Steidl, M.; Weingaertner, R.; De Zela, F.; Winnacker, A.

    2010-01-01

    We produce amorphous silicon carbide thin films (a-SiC) by radio frequency (rf) magnetron sputtering from SiC bulk target. We present the emission pattern of the rf magnetron with SiC target as a function of process parameters, like target sample distance, rf power, sputtering rate and process gas pressure. The emission pattern is determined by means of thickness distribution of the deposited a-SiC films obtained from optical transmission measurements using a slightly improved method of Swanepoel concerning the determination of construction of the envelopes in the interference pattern of the transmission spectra. A calibration curve is presented which allows the conversion of integrated transmission to film thickness. Holding constant a set of process parameters and only varying the target sample distance the emission pattern of the rf magnetron with SiC target was determined, which allowed us to predict the deposition rate distribution for a wide range of process parameters and target geometry. In addition, we have found that the transmission spectra of the a-SiC films change with time and saturate after approximately 10 days. Within this process no change in thickness is involved, so that the determination of thickness using transmission data is justified.

  8. Fabrication of silicon-embedded low resistance high-aspect ratio planar copper microcoils

    Science.gov (United States)

    Syed Mohammed, Zishan Ali; Puiu, Poenar Daniel; Aditya, Sheel

    2018-01-01

    Low resistance is an important requirement for microcoils which act as a signal receiver to ensure low thermal noise during signal detection. High-aspect ratio (HAR) planar microcoils entrenched in blind silicon trenches have features that make them more attractive than their traditional counterparts employing electroplating through a patterned thick polymer or achieved through silicon vias. However, challenges met in fabrication of such coils have not been discussed in detail until now. This paper reports the realization of such HAR microcoils embedded in Si blind trenches, fabricated with a single lithography step by first etching blind trenches in the silicon substrate with an aspect ratio of almost 3∶1 and then filling them up using copper electroplating. The electroplating was followed by chemical wet etching as a faster way of removing excess copper than traditional chemical mechanical polishing. Electrical resistance was further reduced by annealing the microcoils. The process steps and challenges faced in the realization of such structures are reported here followed by their electrical characterization. The obtained electrical resistances are then compared with those of other similar microcoils embedded in blind vias.

  9. Planar shock focusing through perfect gas lens: First experimental demonstration

    International Nuclear Information System (INIS)

    Biamino, Laurent; Mariani, Christian; Jourdan, Georges; Houas, Lazhar; Vandenboomgaerde, Marc; Souffland, Denis

    2014-01-01

    When a shock wave crosses an interface between two materials, this interface becomes unstable and the Richtmyer-Meshkov instability develops. Such instability has been extensively studied in the planar case, and numerous results were presented during the previous workshops. But the Richtmyer-Meshkov (Richtmyer, 1960, 'Taylor Instability in Shock Acceleration of Compressible Fluids,' Commun. Pure Appl. Math., 13(2), pp. 297-319; Meshkov, 1969, 'Interface of Two Gases Accelerated by a Shock Wave,' Fluid Dyn., 4(5), pp. 101-104) instability also occurs in a spherical case where the convergence effects must be taken into account. As far as we know, no conventional (straight section) shock tube facility has been used to experimentally study the Richtmyer-Meshkov instability in spherical geometry. The idea originally proposed by Dimotakis and Samtaney (2006, 'Planar Shock Cylindrical Focusing by a Perfect-Gas Lens,' Phys. Fluid., 18(3), pp. 031705-031708) and later generalized by Vandenboomgaerde and Aymard (2011, 'Analytical Theory for Planar Shock Focusing Through Perfect Gas Lens and Shock Tube Experiment Designs,' Phys. Fluid., 23(1), pp. 016101-016113) was to retain the flexibility of a conventional shock tube to convert a planar shock wave into a cylindrical one through a perfect gas lens. This can be done when a planar shock wave passes through a shaped interface between two gases. By coupling the shape with the impedance mismatch at the interface, it is possible to generate a circular transmitted shock wave. In order to experimentally check the feasibility of this approach, we have implemented the gas lens technique on a conventional shock tube with the help of a convergent test section, an elliptic stereo lithographed grid, and a nitrocellulose membrane. First experimental sequences of Schlieren images have been obtained for an incident shock wave Mach number equal to 1.15 and an air/SF_6-shaped interface. Experimental results indicate that the shock that moves

  10. Room Temperature Optical Constants and Band Gap Evolution of Phase Pure M1-VO2 Thin Films Deposited at Different Oxygen Partial Pressures by Reactive Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Meng Jiang

    2014-01-01

    Full Text Available Spectroscopic ellipsometry study was employed for phase pure VO2(M1 thin films grown at different oxygen partial pressures by reactive magnetron sputtering. The optical constants of the VO2(M1 thin films have been determined in a photon energy range between 0.73 and 5.05 eV. The near-infrared extinction coefficient and optical conductivity of VO2(M1 thin films rapidly increase with decreasing O2-Ar ratios. Moreover, two electronic transitions can be uniquely assigned. The energy gaps correlated with absorption edge (E1 at varied O2-Ar ratios are almost the same (~2.0 eV; consequently, the absorption edge is not significantly changed. However, the optical band gap corresponding to semiconductor-to-metal phase transition (E2 decreases from 0.53 to 0.18 eV with decreasing O2-Ar ratios.

  11. Calibration of Relative Humidity Devices in Low-pressure, Low-temperature CO2 Environment

    Science.gov (United States)

    Genzer, Maria; Polkko, Jouni; Nikkanen, Timo; Hieta, Maria; Harri, Ari-Matti

    2017-04-01

    Calibration of relative humidity devices requires in minimum two humidity points - dry (0%RH) and (near)saturation (95-100%RH) - over the expected operational temperature and pressure range of the device. In terrestrial applications these are relatively easy to achieve using for example N2 gas as dry medium, and water vapor saturation chambers for producing saturation and intermediate humidity points. But for example in applications intended for meteorological measurements on Mars there is a need to achieve at least dry and saturation points in low-temperature, low-pressure CO2 environment. We have developed a custom-made, small, relatively low-cost calibration chamber able to produce both dry points and saturation points in Martian range pressure CO2, in temperatures down to -70°C. The system utilizes a commercially available temperature chamber for temperature control, vacuum vessels and pumps. The main pressure vessel with the devices under test inside is placed inside the temperature chamber, and the pressure inside is controlled by pumps and manual valves and monitored with a commercial pressure reference with calibration traceable to national standards. Air, CO2, or if needed another gas like N2, is used for filling the vessel until the desired pressure is achieved. Another pressure vessel with a dedicated pressure pump is used as the saturation chamber. This vessel is placed in the room outside the temperature chamber, partly filled with water and used for achieving saturated water vapor in room-temperature low-pressure environment. The saturation chamber is connected to the main pressure vessel via valves. In this system dry point, low-pressure CO2 environment is achieved by filling the main pressure vessel with dry CO2 gas until the desired pressure is achieved. A constant flow of gas is maintained with the pump and valves and monitored with the pressure reference. The saturation point is then achieved by adding some water vapor from the saturation

  12. Pulsed-DC selfsputtering of copper

    International Nuclear Information System (INIS)

    Wiatrowski, A; Posadowski, W M; Radzimski, Z J

    2008-01-01

    At standard magnetron sputtering conditions (argon pressure ∼0.5 Pa) inert gas particles are often entrapped in the formed films. Inert gas contamination can be eliminated by using the self-sustained magnetron sputtering process because it is done in the absence of the inert gas atmosphere. The self-sustained sputtering (SSS) gives also a unique condition during the transport of sputtered particles to the substrate. It is especially useful for filling high aspect ratio submicron scale structures for microelectronics. So far it has been shown that the self-sputtering process can be sustained in the DC operation mode (DC-SSS) only. The main disadvantage of DC-SSS process is instability related to possible arc formation. Usage of pulsed sputtering, similarly to reactive pulsed magnetron sputtering, could eliminate this problem. In this paper results of pulsed-DC self-sustained magnetron sputtering (pulsed DC-SSS) of copper are presented for the first time. The planar magnetron equipped with a 50 mm in diameter and 6 mm thick copper target was powered by DC-power supply modulated by power switch. The maximum target power was about 11 kW (∼550W/cm 2 ). The magnetron operation was investigated as a function of pulsing frequency (20-100 kHz) and duty factor (50-90%). The discharge extinction pressure was determined for these conditions. The plasma emission spectra (400-410nm range) and deposition rates were observed for both DC and pulsed DC sustained self-sputtering processes. The presented results illustrate that stable pulsed DC-SSS process can be obtained at pulsing frequency in the range of 60-100 kHz and duty factor of 70-90%

  13. Pulsed-DC selfsputtering of copper

    Science.gov (United States)

    Wiatrowski, A.; Posadowski, W. M.; Radzimski, Z. J.

    2008-03-01

    At standard magnetron sputtering conditions (argon pressure ~0.5 Pa) inert gas particles are often entrapped in the formed films. Inert gas contamination can be eliminated by using the self-sustained magnetron sputtering process because it is done in the absence of the inert gas atmosphere. The self-sustained sputtering (SSS) gives also a unique condition during the transport of sputtered particles to the substrate. It is especially useful for filling high aspect ratio submicron scale structures for microelectronics. So far it has been shown that the self-sputtering process can be sustained in the DC operation mode (DC-SSS) only. The main disadvantage of DC-SSS process is instability related to possible arc formation. Usage of pulsed sputtering, similarly to reactive pulsed magnetron sputtering, could eliminate this problem. In this paper results of pulsed-DC self-sustained magnetron sputtering (pulsed DC-SSS) of copper are presented for the first time. The planar magnetron equipped with a 50 mm in diameter and 6 mm thick copper target was powered by DC-power supply modulated by power switch. The maximum target power was about 11 kW (~550W/cm2). The magnetron operation was investigated as a function of pulsing frequency (20-100 kHz) and duty factor (50-90%). The discharge extinction pressure was determined for these conditions. The plasma emission spectra (400-410nm range) and deposition rates were observed for both DC and pulsed DC sustained self-sputtering processes. The presented results illustrate that stable pulsed DC-SSS process can be obtained at pulsing frequency in the range of 60-100 kHz and duty factor of 70-90%.

  14. Time-resolved investigation of dual high power impulse magnetron sputtering with closed magnetic field during deposition of Ti-Cu thin films

    International Nuclear Information System (INIS)

    Stranak, Vitezslav; Hippler, Rainer; Cada, Martin; Hubicka, Zdenek; Tichy, Milan

    2010-01-01

    Time-resolved comparative study of dual magnetron sputtering (dual-MS) and dual high power impulse magnetron sputtering (dual-HiPIMS) systems arranged with closed magnetic field is presented. The dual-MS system was operated with a repetition frequency 4.65 kHz (duty cycle ≅50%). The frequency during dual-HiPIMS is lower as well as its duty cycle (f=100 Hz, duty 1%). Different metallic targets (Ti, Cu) and different cathode voltages were applied to get required stoichiometry of Ti-Cu thin films. The plasma parameters of the interspace between magnetrons in the substrate position were investigated by time-resolved optical emission spectroscopy, Langmuir probe technique, and measurement of ion fluxes to the substrate. It is shown that plasma density as well as ion flux is higher about two orders of magnitude in dual-HiPIMS system. This fact is partially caused by low diffusion of ionized sputtered particles (Ti + ,Cu + ) which creates a preionized medium.

  15. Low-density silicon thin films for lithium-ion battery anodes

    Energy Technology Data Exchange (ETDEWEB)

    Demirkan, M.T., E-mail: tmdemirkan@ualr.edu [Department of Physics and Astronomy, University of Arkansas at Little Rock, Little Rock, AR 72204 (United States); Department of Materials Science and Engineering, Gebze Technical University, Kocaeli (Turkey); Trahey, L. [Chemical Sciences and Engineering Division, Argonne National Laboratory, Argonne, IL 60439 (United States); Karabacak, T. [Department of Physics and Astronomy, University of Arkansas at Little Rock, Little Rock, AR 72204 (United States)

    2016-02-01

    Density of sputter deposited silicon (Si) thin films was changed by a simple working gas pressure control process, and its effects on the cycling performance of Si films in Li-ion batteries as anodes was investigated. Higher gas pressure results in reduced film densities due to a shadowing effect originating from lower mean free path of sputter atoms, which leads to a wider angular distribution of the incoming flux and formation of a porous film microstructure. Si thin film anodes of different densities ranging from 2.27 g/cm{sup 3} (film porosity ~ 3%) down to 1.64 g/cm{sup 3} (~ 30% porosity) were fabricated by magnetron sputtering at argon pressures varying from 0.2 Pa to 2.6 Pa, respectively. High density Si thin film anodes of 2.27 g/cm{sup 3} suffered from an unstable cycling behavior during charging/discharging depicted by a continuous reduction in specific down to ~ 830 mAh/g at the 100th cycle. Electrochemical properties of lower density films with 1.99 g/cm{sup 3} (~ 15% porosity) and 1.77 g/cm{sup 3} (~ 24% porosity) got worse resulting in only ~ 100 mAh/g capacity at 100th cycle. On the other hand, as the density of anode was further reduced down to about 1.64 g/cm{sup 3} (~ 30% porosity), cycling stability and capacity retention significantly improved resulting in specific capacity values ~ 650 mAh/g at 100th cycle with coulombic efficiencies of > 98%. Enhancement in our low density Si film anodes are believed to mainly originate from the availability of voids for volumetric expansion during lithiation and resulting compliant behavior that provides superior mechanical and electrochemical stability. - Highlights: • Low density Si thin films were studied as Li-ion battery anodes. • Low density Si films were fabricated by magnetron sputter deposition. • Density of Si films reduced down to as low as ~ 1.64 g/cm{sup 3} with a porosity of ~ 30% • Low density Si films presented superior mechanical properties during cycling.

  16. Dual-Band Compact Planar Antenna for a Low-Cost WLAN USB Dongle

    Directory of Open Access Journals (Sweden)

    Maurício Henrique Costa Dias

    2014-01-01

    Full Text Available Among the present technologies for WLAN devices, USB dongles still play a noticeable role. One major design challenge regards the antenna, which unavoidably has to comply with a very small volume available and sometimes should also allow multiband operation. In this scope, the present work discusses a dual-band WiFi compact planar IFA-based antenna design for a low-cost USB dongle application. Like most of the related published solutions, the methodology for deriving the present proposition was assisted by the use of an antenna analysis software. A prototype was assembled and tested in order to qualify the radiator design. Practical operation conditions were considered in the tests, such as the influence of the dongle case and the effect of the notebook itself. The results complied with the design constraints, presenting an impedance match quite stable regardless of the stick position alongside a laptop base.

  17. Experimental study an a low pressure solar still

    International Nuclear Information System (INIS)

    Sriram, V.; Kalidasa Murugavel, K.; Samuel Hansen, R.

    2013-01-01

    In this work, a low pressure, single basin double slope Solar Still was fabricated and tested for different depths and with different wick and porous materials. A vacuum pump was used to maintain low pressure inside the still. External condenser was used to condense the vapor with raw water as cooling fluid. The performance of the low pressure still was compared with conventional still. The total production of the still was increased by 88.66% when a light cotton cloth was used as wick material in the basin along with minimum depth of water. (authors)

  18. Magnetron injection gun for a broadband gyrotron backward-wave oscillator

    International Nuclear Information System (INIS)

    Yuan, C. P.; Chang, T. H.; Chen, N. C.; Yeh, Y. S.

    2009-01-01

    The magnetron injection gun is capable of generating relativistic electron beam with high velocity ratio and low velocity spread for a gyrotron backward-wave oscillator (gyro-BWO). However, the velocity ratio (α) varies drastically against both the magnetic field and the beam voltage, which significantly limits the tuning bandwidth of a gyro-BWO. This study remedies this drawback by adding a variable trim field to adjust the magnetic compression ratio when changing the operating conditions. Theoretical results obtained by employing a two-dimensional electron gun code (EGUN) demonstrate a constant velocity ratio of 1.5 with a low axial velocity spread of 6% from 3.4-4.8 Tesla. These results are compared with a three-dimensional particle-tracing code (computer simulation technology, CST). The underlying physics for constant α will be discussed in depth.

  19. Magnetron injection gun for a broadband gyrotron backward-wave oscillator

    Science.gov (United States)

    Yuan, C. P.; Chang, T. H.; Chen, N. C.; Yeh, Y. S.

    2009-07-01

    The magnetron injection gun is capable of generating relativistic electron beam with high velocity ratio and low velocity spread for a gyrotron backward-wave oscillator (gyro-BWO). However, the velocity ratio (α) varies drastically against both the magnetic field and the beam voltage, which significantly limits the tuning bandwidth of a gyro-BWO. This study remedies this drawback by adding a variable trim field to adjust the magnetic compression ratio when changing the operating conditions. Theoretical results obtained by employing a two-dimensional electron gun code (EGUN) demonstrate a constant velocity ratio of 1.5 with a low axial velocity spread of 6% from 3.4-4.8 Tesla. These results are compared with a three-dimensional particle-tracing code (computer simulation technology, CST). The underlying physics for constant α will be discussed in depth.

  20. Electron relaxation properties of Ar magnetron plasmas

    Science.gov (United States)

    Xinjing, CAI; Xinxin, WANG; Xiaobing, ZOU

    2018-03-01

    An understanding of electron relaxation properties in plasmas is of importance in the application of magnetrons. An improved multi-term approximation of the Boltzmann equation is employed to study electron transport and relaxation properties in plasmas. Elastic, inelastic and nonconservative collisions between electrons and neutral particles are considered. The expressions for the transport coefficients are obtained using the expansion coefficients and the collision operator term. Numerical solutions of the matrix equations for the expansion coefficients are also investigated. Benchmark calculations of the Reid model are presented to demonstrate the accuracy of the improved multi-term approximation. It is shown that the two-term approximation is generally not accurate enough and the magnetic fields can reduce the anisotropy of the velocity distribution function. The electron relaxation properties of Ar plasmas in magnetrons for various magnetic fields are studied. It is demonstrated that the energy parameters change more slowly than the momentum parameters.

  1. A Low-Pressure Oxygen Storage System for Oxygen Supply in Low-Resource Settings.

    Science.gov (United States)

    Rassool, Roger P; Sobott, Bryn A; Peake, David J; Mutetire, Bagayana S; Moschovis, Peter P; Black, Jim Fp

    2017-12-01

    Widespread access to medical oxygen would reduce global pneumonia mortality. Oxygen concentrators are one proposed solution, but they have limitations, in particular vulnerability to electricity fluctuations and failure during blackouts. The low-pressure oxygen storage system addresses these limitations in low-resource settings. This study reports testing of the system in Melbourne, Australia, and nonclinical field testing in Mbarara, Uganda. The system included a power-conditioning unit, a standard oxygen concentrator, and an oxygen store. In Melbourne, pressure and flows were monitored during cycles of filling/emptying, with forced voltage fluctuations. The bladders were tested by increasing pressure until they ruptured. In Mbarara, the system was tested by accelerated cycles of filling/emptying and then run on grid power for 30 d. The low-pressure oxygen storage system performed well, including sustaining a pressure approximately twice the standard working pressure before rupture of the outer bag. Flow of 1.2 L/min was continuously maintained to a simulated patient during 30 d on grid power, despite power failures totaling 2.9% of the total time, with durations of 1-176 min (mean 36.2, median 18.5). The low-pressure oxygen storage system was robust and durable, with accelerated testing equivalent to at least 2 y of operation revealing no visible signs of imminent failure. Despite power cuts, the system continuously provided oxygen, equivalent to the treatment of one child, for 30 d under typical power conditions for sub-Saharan Africa. The low-pressure oxygen storage system is ready for clinical field trials. Copyright © 2017 by Daedalus Enterprises.

  2. A Planar Source of Atmospheric-Pressure Plasma Jet

    Science.gov (United States)

    Zhdanova, O. S.; Kuznetsov, V. S.; Panarin, V. A.; Skakun, V. S.; Sosnin, E. A.; Tarasenko, V. F.

    2018-01-01

    In a single-barrier discharge with voltage sharpening and low gas consumption (up to 1 L/min), plane atmospheric pressure plasma jets with a width of up to 3 cm and length of up to 4 cm in air are formed in the slit geometry of the discharge zone. The energy, temperature, and spectral characteristics of the obtained jets have been measured. The radiation spectrum contains intense maxima corresponding to vibrational transitions of the second positive system of molecular nitrogen N2 ( C 3Π u → B 3Π g ) and comparatively weak transition lines of the first positive system of the N 2 + ion ( B 2Σ u + → X 2Σ g ). By an example of inactivation of the Staphylococcus aureus culture (strain ATCC 209), it is shown that plasma is a source of chemically active particles providing the inactivation of microorganisms.

  3. Composition-control of magnetron-sputter-deposited (BaxSr1-x)Ti1+yO3+z thin films for voltage tunable devices

    Science.gov (United States)

    Im, Jaemo; Auciello, O.; Baumann, P. K.; Streiffer, S. K.; Kaufman, D. Y.; Krauss, A. R.

    2000-01-01

    Precise control of composition and microstructure is critical for the production of (BaxSr1-x)Ti1+yO3+z (BST) dielectric thin films with the large dependence of permittivity on electric field, low losses, and high electrical breakdown fields that are required for successful integration of BST into tunable high-frequency devices. Here, we present results on composition-microstructure-electrical property relationships for polycrystalline BST films produced by magnetron-sputter deposition, that are appropriate for microwave and millimeter-wave applications such as varactors and frequency triplers. Films with controlled compositions were grown from a stoichiometric Ba0.5Sr0.5TiO3 target by control of the background processing gas pressure. It was determined that the (Ba+Sr)/Ti ratios of these BST films could be adjusted from 0.73 to 0.98 by changing the total (Ar+O2) process pressure, while the O2/Ar ratio did not strongly affect the metal ion composition. Film crystalline structure and dielectric properties as a function of the (Ba+Sr)/Ti ratio are discussed. Optimized BST films yielded capacitors with low dielectric losses (0.0047), among the best reported for sputtered BST, while still maintaining tunabilities suitable for device applications.

  4. Composition-control of magnetron-sputter-deposited (BaxSr1-x)Ti1+yO3+z thin films for voltage tunable devices

    International Nuclear Information System (INIS)

    Im, Jaemo; Auciello, O.; Baumann, P. K.; Streiffer, S. K.; Kaufman, D. Y.; Krauss, A. R.

    2000-01-01

    Precise control of composition and microstructure is critical for the production of (Ba x Sr 1-x )Ti 1+y O 3+z (BST) dielectric thin films with the large dependence of permittivity on electric field, low losses, and high electrical breakdown fields that are required for successful integration of BST into tunable high-frequency devices. Here, we present results on composition-microstructure-electrical property relationships for polycrystalline BST films produced by magnetron-sputter deposition, that are appropriate for microwave and millimeter-wave applications such as varactors and frequency triplers. Films with controlled compositions were grown from a stoichiometric Ba 0.5 Sr 0.5 TiO 3 target by control of the background processing gas pressure. It was determined that the (Ba+Sr)/Ti ratios of these BST films could be adjusted from 0.73 to 0.98 by changing the total (Ar+O 2 ) process pressure, while the O 2 /Ar ratio did not strongly affect the metal ion composition. Film crystalline structure and dielectric properties as a function of the (Ba+Sr)/Ti ratio are discussed. Optimized BST films yielded capacitors with low dielectric losses (0.0047), among the best reported for sputtered BST, while still maintaining tunabilities suitable for device applications. (c) 2000 American Institute of Physics

  5. Optimal Design and Tradeoff Analysis of Planar Transformer in High-Power DC–DC Converters

    DEFF Research Database (Denmark)

    Ouyang, Ziwei; Thomsen, Ole Cornelius; Andersen, Michael A. E.

    2012-01-01

    The trend toward high power density, high operating frequency, and low profile in power converters has exposed a number of limitations in the use of conventional wire-wound magnetic component structures. A planar magnetic is a low-profile transformer or inductor utilizing planar windings, instead...... of the traditional windings made of Cu wires. In this paper, the most important factors for planar transformer (PT) design including winding loss, core loss, leakage inductance, and stray capacitance have individually been investigated. The tradeoffs among these factors have to be analyzed in order to achieve...

  6. Planar-integrated single-crystalline perovskite photodetectors

    KAUST Repository

    Saidaminov, Makhsud I.

    2015-11-09

    Hybrid perovskites are promising semiconductors for optoelectronic applications. However, they suffer from morphological disorder that limits their optoelectronic properties and, ultimately, device performance. Recently, perovskite single crystals have been shown to overcome this problem and exhibit impressive improvements: low trap density, low intrinsic carrier concentration, high mobility, and long diffusion length that outperform perovskite-based thin films. These characteristics make the material ideal for realizing photodetection that is simultaneously fast and sensitive; unfortunately, these macroscopic single crystals cannot be grown on a planar substrate, curtailing their potential for optoelectronic integration. Here we produce large-area planar-integrated films made up of large perovskite single crystals. These crystalline films exhibit mobility and diffusion length comparable with those of single crystals. Using this technique, we produced a high-performance light detector showing high gain (above 104 electrons per photon) and high gain-bandwidth product (above 108 Hz) relative to other perovskite-based optical sensors.

  7. Germination and growth of lettuce (Lactuca sativa) at low atmospheric pressure

    Science.gov (United States)

    Spanarkel, Robert; Drew, Malcolm C.

    2002-01-01

    The response of lettuce (Lactuca sativa L. cv. Waldmann's Green) to low atmospheric pressure was examined during the initial 5 days of germination and emergence, and also during subsequent growth to vegetative maturity at 30 days. Growth took place inside a 66-l-volume low pressure chamber maintained at 70 kPa, and plant response was compared to that of plants in a second, matching chamber that was at ambient pressure (approximately 101 kPa) as a control. In other experiments, to determine short-term effects of low pressure transients, plants were grown at ambient pressure until maturity and then subjected to alternating periods of 24 h of low and ambient atmospheric pressures. In all treatments the partial pressure of O2 was maintained at 21 kPa (approximately the partial pressure in air at normal pressure), and the partial pressure of CO2 was in the range 66.5-73.5 Pa (about twice that in normal air) in both chambers, with the addition of CO2 during the light phase. With continuous exposure to low pressure, shoot and root growth was at least as rapid as at ambient pressure, with an overall trend towards slightly greater performance at the lower pressure. Dark respiration rates were greater at low pressure. Transient periods at low pressure decreased transpiration and increased dark respiration but only during the period of exposure to low pressure. We conclude that long-term or short-term exposure to subambient pressure (70 kPa) was without detectable detriment to vegetative growth and development.

  8. Tandem-Mirror Experiment-Upgrade neutral pressure measurement diagnostic systems

    International Nuclear Information System (INIS)

    Pickles, W.L.; Allen, S.L.; Hill, D.N.; Hunt, A.L.; Simonen, T.C.

    1985-01-01

    The Tandem-Mirror Experiment-Upgrade (TMX-U) has a large and complex system of Bayard--Alpert, magnetron, and Penning gauges, in addition to mass spectrometers (RGA), all of which measure neutral pressures in the many internal regions of TMX-U. These pressure measurements are used as part of the confinement physics data base as well as for management of the TMX-U vacuum system. Dynamic pressures are modeled by a coupled-volumes simulation code, which includes wall reflux, getter pumping, and plasma pumping

  9. First demonstration and performance of an injection locked continuous wave magnetron to phase control a superconducting cavity

    Directory of Open Access Journals (Sweden)

    A. C. Dexter

    2011-03-01

    Full Text Available The applications of magnetrons to high power proton and cw electron linacs are discussed. An experiment is described where a 2.45 GHz magnetron has been used to drive a single cell superconducting cavity. With the magnetron injection locked, a modest phase control accuracy of 0.95° rms has been demonstrated. Factors limiting performance have been identified.

  10. Hydrogenated arsenenes as planar magnet and Dirac material

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Shengli; Cai, Bo; Zeng, Haibo, E-mail: Huziyu@csrc.ac.cn, E-mail: zeng.haibo@njust.edu.cn [Institute of Optoelectronics and Nanomaterials, Herbert Gleiter Institute of Nanoscience, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094 (China); Hu, Yonghong [Institute of Optoelectronics and Nanomaterials, Herbert Gleiter Institute of Nanoscience, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094 (China); School of Nuclear Technology and Chemistry and Biology, Hubei University of Science and Technology, Xianning 437100 (China); Hu, Ziyu, E-mail: Huziyu@csrc.ac.cn, E-mail: zeng.haibo@njust.edu.cn [Beijing Computational Science Research Center, Beijing 100084 (China)

    2015-07-13

    Arsenene and antimonene are predicted to have 2.49 and 2.28 eV band gaps, which have aroused intense interest in the two-dimensional (2D) semiconductors for nanoelectronic and optoelectronic devices. Here, the hydrogenated arsenenes are reported to be planar magnet and 2D Dirac materials based on comprehensive first-principles calculations. The semi-hydrogenated (SH) arsenene is found to be a quasi-planar magnet, while the fully hydrogenated (FH) arsenene is a planar Dirac material. The buckling height of pristine arsenene is greatly decreased by the hydrogenation, resulting in a planar and relatively low-mass-density sheet. The electronic structures of arsenene are also evidently altered after hydrogenating from wide-band-gap semiconductor to metallic material for SH arsenene, and then to Dirac material for FH arsenene. The SH arsenene has an obvious magnetism, mainly contributed by the p orbital of the unsaturated As atom. Such magnetic and Dirac materials modified by hydrogenation of arsenene may have potential applications in future optoelectronic and spintronic devices.

  11. Hydrogenated arsenenes as planar magnet and Dirac material

    International Nuclear Information System (INIS)

    Zhang, Shengli; Cai, Bo; Zeng, Haibo; Hu, Yonghong; Hu, Ziyu

    2015-01-01

    Arsenene and antimonene are predicted to have 2.49 and 2.28 eV band gaps, which have aroused intense interest in the two-dimensional (2D) semiconductors for nanoelectronic and optoelectronic devices. Here, the hydrogenated arsenenes are reported to be planar magnet and 2D Dirac materials based on comprehensive first-principles calculations. The semi-hydrogenated (SH) arsenene is found to be a quasi-planar magnet, while the fully hydrogenated (FH) arsenene is a planar Dirac material. The buckling height of pristine arsenene is greatly decreased by the hydrogenation, resulting in a planar and relatively low-mass-density sheet. The electronic structures of arsenene are also evidently altered after hydrogenating from wide-band-gap semiconductor to metallic material for SH arsenene, and then to Dirac material for FH arsenene. The SH arsenene has an obvious magnetism, mainly contributed by the p orbital of the unsaturated As atom. Such magnetic and Dirac materials modified by hydrogenation of arsenene may have potential applications in future optoelectronic and spintronic devices

  12. Hydrogenated arsenenes as planar magnet and Dirac material

    Science.gov (United States)

    Zhang, Shengli; Hu, Yonghong; Hu, Ziyu; Cai, Bo; Zeng, Haibo

    2015-07-01

    Arsenene and antimonene are predicted to have 2.49 and 2.28 eV band gaps, which have aroused intense interest in the two-dimensional (2D) semiconductors for nanoelectronic and optoelectronic devices. Here, the hydrogenated arsenenes are reported to be planar magnet and 2D Dirac materials based on comprehensive first-principles calculations. The semi-hydrogenated (SH) arsenene is found to be a quasi-planar magnet, while the fully hydrogenated (FH) arsenene is a planar Dirac material. The buckling height of pristine arsenene is greatly decreased by the hydrogenation, resulting in a planar and relatively low-mass-density sheet. The electronic structures of arsenene are also evidently altered after hydrogenating from wide-band-gap semiconductor to metallic material for SH arsenene, and then to Dirac material for FH arsenene. The SH arsenene has an obvious magnetism, mainly contributed by the p orbital of the unsaturated As atom. Such magnetic and Dirac materials modified by hydrogenation of arsenene may have potential applications in future optoelectronic and spintronic devices.

  13. [Effect of niobium nitride on the bonding strength of titanium porcelain by magnetron sputtering].

    Science.gov (United States)

    Wang, Shu-shu; Zhang, La-bao; Guang, Han-bing; Zhou, Shu; Zhang, Fei-min

    2010-05-01

    To investigate the effect of magnetron sputtered niobium nitride (NbN) on the bonding strength of commercially pure cast titanium (Ti) and low-fusing porcelain (Ti/Vita titankeramik system). Sixty Ti specimens were randomly divided into four groups, group T1, T2, T3 and T4. All specimens of group T1 and T2 were first treated with 120 microm blasted Al2O3 particles, and then only specimens of group T2 were treated with magnetron sputtered NbN film. All specimens of group T3 and T4 were first treated with magnetron sputtered NbN film and then only specimens of group T4 were treated with 120 microm blasted Al2O3 particles. The composition of the deposits were analyzed by X-ray diffraction (XRD). A universal testing machine was used to perform the three-point bending test to evaluate the bonding strength of Ti and porcelain. The microstructure of NbN, the interface of Ti-porcelain and the fractured Ti surface were observed with scanning electron microscopy (SEM) and energy depressive spectrum (EDS), and the results were compared. The XRD results showed that the NbN deposits were cubic crystalline phases. The bonding strength of Ti and porcelain in T1 to T4 group were (27.2+/-0.8), (43.1+/-0.6), (31.4+/-1.0) and (44.9+/-0.6) MPa. These results were analyzed by one-way analysis of variance and differences between groups were compared using least significant difference test. Significant inter-group differences were found among all groups (Pporcelain, while samples treated with both Al2O3 and NbN had better bond. EDS of Ti-porcelain interface showed oxidation occurred in T1, T2 and T3, but was well controlled in T4. Magnetron sputtered NbN can prevent Ti from being oxidized, and can improve the bonding strength of Ti/Vita titankeramik system. Al2O3 blast can also improve the bonding strength of Ti/Vita titankeramik system.

  14. Low temperature sacrificial wafer bonding for planarization after very deep etching

    NARCIS (Netherlands)

    Spiering, V.L.; Spiering, V.L.; Berenschot, Johan W.; Elwenspoek, Michael Curt; Fluitman, J.H.J.

    1994-01-01

    A new technique, at temperatures of 150°C or 450°C, that provides planarization after a very deep etching step in silicon is presented. Resist spinning and layer patterning as well as realization of bridges or cantilevers across deep holes becomes possible. The sacrificial wafer bonding technique

  15. Characterization and Optimization of the Magnetron Directional Amplifier

    National Research Council Canada - National Science Library

    Hatfield, Michael

    1999-01-01

    .... A conventional microwave oven magnetron may be converted into a two-port amplifier capable of delivering over 30 dB of gain, while remaining phase-locked to the input signal over a wide frequency range...

  16. Performance Analysis of Abrasive Waterjet Machining Process at Low Pressure

    Science.gov (United States)

    Murugan, M.; Gebremariam, MA; Hamedon, Z.; Azhari, A.

    2018-03-01

    Normally, a commercial waterjet cutting machine can generate water pressure up to 600 MPa. This range of pressure is used to machine a wide variety of materials. Hence, the price of waterjet cutting machine is expensive. Therefore, there is a need to develop a low cost waterjet machine in order to make the technology more accessible for the masses. Due to its low cost, such machines may only be able to generate water pressure at a much reduced rate. The present study attempts to investigate the performance of abrasive water jet machining process at low cutting pressure using self-developed low cost waterjet machine. It aims to study the feasibility of machining various materials at low pressure which later can aid in further development of an effective low cost water jet machine. A total of three different materials were machined at a low pressure of 34 MPa. The materials are mild steel, aluminium alloy 6061 and plastics Delrin®. Furthermore, a traverse rate was varied between 1 to 3 mm/min. The study on cutting performance at low pressure for different materials was conducted in terms of depth penetration, kerf taper ratio and surface roughness. It was found that all samples were able to be machined at low cutting pressure with varied qualities. Also, the depth of penetration decreases with an increase in the traverse rate. Meanwhile, the surface roughness and kerf taper ratio increase with an increase in the traverse rate. It can be concluded that a low cost waterjet machine with a much reduced rate of water pressure can be successfully used for machining certain materials with acceptable qualities.

  17. The Development and Application of the Magnetron,

    Science.gov (United States)

    1982-03-31

    of *medicine. The power of the magnetron used is from several tens of watts to several hundred watts. Microwave physiotherapy has been used in...clinical practice for the fast cure of arthritis , rheumatism and the subsidence of swelling. Therapeutic results have been excellent. In recent years

  18. Dependence of the constitution, microstructure and electrochemical behaviour of magnetron sputtered Li-Ni-Mn-Co-O thin film cathodes for lithium-ion batteries on the working gas pressure and annealing conditions

    International Nuclear Information System (INIS)

    Strafela, Marc; Fischer, Julian; Leiste, Harald; Rinke, Monika; Bergfeldt, Thomas; Seifert, Hans Juergen; Ulrich, Sven; Music, Denis; Chang, Keke; Schneider, Jochen

    2017-01-01

    Li(Ni 1/3 Mn 1/3 Co 1/3 )O 2 as a cathode material for lithium ion batteries shows good thermal stability, high reversible capacity (290 mAh g -1 ), good rate capability and better results in terms of environmental friendliness. In this paper thin film cathodes in the material system Li-Ni-Mn-Co-O were deposited onto silicon and stainless steel substrates, by non-reactive r.f. magnetron sputtering from a ceramic Li 1.18 (Ni 0.39 Mn 0.19 Co 0.35 )O 1.97 target at various argon working gas pressures between 0.2 Pa and 20 Pa. A comprehensive study on the composition and microstructure was carried out. The results showed that the elemental composition varies depending on argon working gas pressure. The elemental composition was determined by inductively coupled plasma optical emission spectroscopy in combination with carrier gas hot extraction. The films showed different grain orientations depending argon working gas pressures. The degree of cation order in the lattice structure of the films deposited at 0.5 Pa and 7 Pa argon working gas pressure, was increased by annealing in an argon/oxygen atmosphere at different pressures for one hour. The microstructure of the films varies with annealing gas pressure and is characterized using X-ray diffraction and unpolarized micro-Raman spectroscopy at room temperature. Electrochemical characterization of as-deposited and annealed films was carried out by galvanostatic cycling in Li-Ni-Mn-Co-O half-cells against metallic lithium. Correlations between process parameters, constitution, microstructure and electrochemical behaviour are discussed in detail.

  19. Performance Characterization of Solid Oxide Cells Under High Pressure

    DEFF Research Database (Denmark)

    Sun, Xiufu; Bonaccorso, Alfredo Damiano; Graves, Christopher R.

    2015-01-01

    on partial pressures (oxygen, steam and hydrogen) were affected by increasing the pressure. In electrolysis mode at low current density, the performance improvement was counteracted by the increase in open circuit voltage, but it has to be borne in mind that the pressurized gas contains higher molar free......In this work, recent pressurized test results of a planar Ni- YSZ (YSZ: Yttria stabilized Zirconia) supported solid oxide cell are presented. Measurements were performed at 800 C in both fuel cell and electrolysis mode at different pressures. A comparison of the electrochemical performance...... of the cell at 1 and 3 bar shows a significant and equal performance gain at higher pressure in both fuel cell mode and electrolysis mode. Electrochemical impedance spectroscopy revealed that the serial resistance was not affected by the operation pressure; all the other processes that are dependent...

  20. Fabrication of thin ZnO films with wide-range tuned optical properties by reactive magnetron sputtering

    Science.gov (United States)

    Davydova, A.; Tselikov, G.; Dilone, D.; Rao, K. V.; Kabashin, A. V.; Belova, L.

    2018-02-01

    We report the manufacturing of thin zinc oxide films by reactive magnetron sputtering at room temperature, and examine their structural and optical properties. We show that the partial oxygen pressure in DC mode can have dramatic effect on absorption and refractive index (RI) of the films in a broad spectral range. In particular, the change of the oxygen pressure from 7% to 5% can lead to either conventional crystalline ZnO films having low absorption and characteristic descending dependence of RI from 2.4-2.7 RIU in the visible to 1.8-2 RIU in the near-infrared (1600 nm) range, or to untypical films, composed of ZnO nano-crystals embedded into amorphous matrix, exhibiting unexpectedly high absorption in the visible-infrared region and ascending dependence of RI with values varying from 1.5 RIU in the visible to 4 RIU in the IR (1600 nm), respectively. Untypical optical characteristics in the second case are explained by defects in ZnO structure arising due to under-oxidation of ZnO crystals. We also show that the observed defect-related film structure remains stable even after annealing of films under relatively high temperatures (30 min under 450 °C). We assume that both types of films can be of importance for photovoltaic (as contact or active layers, respectively), as well as for chemical or biological sensing, optoelectronics etc.

  1. Effect of high pressure hydrogen on low-cycle fatigue

    International Nuclear Information System (INIS)

    Rie, K.T.; Kohler, W.

    1979-01-01

    It has been shown that the fatigue life can be influenced in low-cycle range by high pressure hydrogen while the effect of high pressure hydrogen on high-cycle fatigue will not be as significant. The paper reports the details and the results of the investigations of the effect of high pressure hydrogen on the low-cycle endurance of commercially pure titanium. The results of this study indicate that: 1. The degradation of the fatigue life in low-cycle region for commercially pure titanium under high pressure hydrogen can be described by Nsub(cr)sup(α x Δepsilon)sub(pl)sup(=c) 2. The fatigue life decreases with decreasing strain rate. 3. The fatigue life decreases with increasing hydrogen pressure. It was found that the semilogarithmic plot of the fatigue life versus the hydrogen pressure gives a linear relationship. The Sievert's law does not hold in low-cycle fatigue region. 4. HAC in titanium in low-cycle fatigue region is the result of the disolution of hydrogen at the crack tip and of the strain-induced hybride formation. (orig.) 891 RW/orig. 892 RKD [de

  2. Mechanical properties of TiN films deposited by changed-pressure r.f. sputtering

    International Nuclear Information System (INIS)

    Kubo, Y.; Hashimoto, M.

    1991-01-01

    TiN was deposited onto glass, stainless steel and cemented carbide by r.f. magnetron sputtering. The mechanical properties of TiN such as hardness, internal stress and adhesion were assessed by the Vickers microhardness test, the bending method and the modified scratch test. It was found that the operating pressure during sputtering deposition strongly affects these mechanical properties. As the operating pressure is increased beyond 0.6-0.7 Pa, the adhesion of TiN films onto the substrate increases enormously, but the hardness decreases owing to the release of the high compressive stress in the film. Therefore changing the pressure from high to low during deposition could be a good way of optimizing both hardness and adhesion. The effectiveness of this changed-pressure process was experimentally verified by cutting tests using TiN-coated cemented carbide tools. This process will be applicable to any other hard coating materials having high compressive stresses. (orig.)

  3. Improved Magnetron Stability and Reduced Noise in Efficient Transmitters for Superconducting Accelerators

    Energy Technology Data Exchange (ETDEWEB)

    Kazakevich, G. [MUONS Inc., Batavia; Johnson, R. [MUONS Inc., Batavia; Lebedev, V. [Fermilab; Yakovlev, V. [Fermilab

    2018-04-01

    State of the art high-current superconducting accelerators require efficient RF sources with a fast dynamic phase and power control. This allows for compensation of the phase and amplitude deviations of the accelerating voltage in the Superconducting RF (SRF) cavities caused by microphonics, etc. Efficient magnetron transmitters with fast phase and power control are attractive RF sources for this application. They are more cost effective than traditional RF sources such as klystrons, IOTs and solid-state amplifiers used with large scale accelerator projects. However, unlike traditional RF sources, controlled magnetrons operate as forced oscillators. Study of the impact of the controlling signal on magnetron stability, noise and efficiency is therefore important. This paper discusses experiments with 2.45 GHz, 1 kW tubes and verifies our analytical model which is based on the charge drift approximation.

  4. Pressurized planar electrochromatography, high-performance thin-layer chromatography and high-performance liquid chromatography--comparison of performance.

    Science.gov (United States)

    Płocharz, Paweł; Klimek-Turek, Anna; Dzido, Tadeusz H

    2010-07-16

    Kinetic performance, measured by plate height, of High-Performance Thin-Layer Chromatography (HPTLC), High-Performance Liquid Chromatography (HPLC) and Pressurized Planar Electrochromatography (PPEC) was compared for the systems with adsorbent of the HPTLC RP18W plate from Merck as the stationary phase and the mobile phase composed of acetonitrile and buffer solution. The HPLC column was packed with the adsorbent, which was scrapped from the chromatographic plate mentioned. An additional HPLC column was also packed with adsorbent of 5 microm particle diameter, C18 type silica based (LiChrosorb RP-18 from Merck). The dependence of plate height of both HPLC and PPEC separating systems on flow velocity of the mobile phase and on migration distance of the mobile phase in TLC system was presented applying test solute (prednisolone succinate). The highest performance, amongst systems investigated, was obtained for the PPEC system. The separation efficiency of the systems investigated in the paper was additionally confirmed by the separation of test component mixture composed of six hormones. 2010 Elsevier B.V. All rights reserved.

  5. Improvement of dielectric properties of BLT thin films deposited by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Besland, M P; Barroy, P R J; Richard-Plouet, M; Tessier, P Y; Brohan, L; Djouadi, M A [Universite de Nantes - Institut des Materiaux Jean Rouxel, UMR CNRS 6502, 2, rue de la Houssiniere BP32229, 44322 Nantes Cedex (France); Borderon, C; Tacon, S Le; Averty, D; Gundel, H W [Institut de Recherche en Electrotechnique et Electronique de Nantes Atlantique, UPRES-EA 1770, IREENA, Universite de Nantes, 2, rue de la Houssiniere, BP 92208, 44322 Nantes Cedex (France)], E-mail: Marie-Paule.Besland@cnrs-imn.fr

    2008-01-15

    Well crystallized BLT thin films were deposited by RF magnetron sputtering using a target of Aurivillius phase Bi{sub 3.25}La{sub 0.75}Ti{sub 3}O{sub 12}(BLT{sub 0,75}), elaborated in our institute. RF sputtering experiments were performed at room temperature with an argon/oxygen mixture, in a pressure range of 20-50 mTorr. Optimisation of the plasma parameters, namely deposition pressure, RF power and oxygen content in the gas phase, allows obtaining BLT films with a chemical composition close to Bi{sub 3.25}La{sub 0.75}Ti{sub 3}O{sub 12}. After ex-situ annealing under oxygen atmosphere at 650 deg. C, BLT films deposited on Pt/TiO{sub 2}/SiO{sub 2}/Si (multilayer) substrates exhibit well defined rod-like grains morphology. A two step deposition process appeared to be necessary in order to reach satisfying dielectric properties. The effect of the plasma parameters on the chemical composition and electrical properties are presented and discussed.

  6. Modeling low pressure baroreceptors and their contribution to blood pressure control

    OpenAIRE

    Sánchez de Zambrano, Betsy Mirley; Rojas-Sulbarán, Rubén Darío

    2016-01-01

    The main mechanism for blood pressure (BP) control is coordinated by the central nervous system through the sympathetic and parasympathetic systems. In order to simulate this mechanism, different mathematical models are available, but they take into account only the high pressure receptors as sensing systems for BP. However, other receptors located in low pressure areas have not, as far as we know, been considered in the models described in the literature, despite their important role in the ...

  7. Low friction coefficient coatings Ni-Cr by magnetron sputtering, DC

    Energy Technology Data Exchange (ETDEWEB)

    Morales-Hernandez, J.; Mandujano-Ruiz, A.; Torres-Gonzalez, J.; Espinosa-Beltran, F. J.; Herrera-Hernandez, H.

    2015-07-01

    Magnetron Sputter Deposition technique with DC was used for the deposition of Ni-Cr coatings on AISI 316 SS like substrate. The cathode with a nominal composition Ni-22 at% Cr was prepared by Mechanical Alloying (MA) technique, with a maximum milling time of 16 hours and, with a high energy SPEX 8000 mill. The coatings were made under Argon atmosphere at room temperature with a power of 100 W at different times of growth. Chemical composition, microstructure, topography, nano hardness and wear of the coatings were evaluated using the techniques of microanalysis by energy dispersive X-ray analyzer (EDAX), X-Ray Diffraction (XRD), Atomic Force Microscopy (AFM), Nano-indentation and pin-on-Disk, respectively. After milling, was not detected contamination in the mixtures. XRD analysis revealed that the microstructure of the Ni-Cr alloy was maintained in the coatings with respect to MA powders, with some degree of recrystallization. Nano hardness values were in the order of 8.8 GPa with a Youngs modulus of 195 GPa. The adhesion of the films was evaluated according to their resistance to fracture when these were indented at different loads using Vickers microhardness. The wear test results showed a decrease in the friction coefficient with respect to the increase of thickness films, getting a minimum value of 0.08 with a thickness of 1 μm and which correspond with the maximum growing time. (Author)

  8. Low pressure cooling seal system for a gas turbine engine

    Science.gov (United States)

    Marra, John J

    2014-04-01

    A low pressure cooling system for a turbine engine for directing cooling fluids at low pressure, such as at ambient pressure, through at least one cooling fluid supply channel and into a cooling fluid mixing chamber positioned immediately downstream from a row of turbine blades extending radially outward from a rotor assembly to prevent ingestion of hot gases into internal aspects of the rotor assembly. The low pressure cooling system may also include at least one bleed channel that may extend through the rotor assembly and exhaust cooling fluids into the cooling fluid mixing chamber to seal a gap between rotational turbine blades and a downstream, stationary turbine component. Use of ambient pressure cooling fluids by the low pressure cooling system results in tremendous efficiencies by eliminating the need for pressurized cooling fluids for sealing this gap.

  9. Resputtering-induced chemical inhomogeneity during the growth of high Tc superconductor thin films

    International Nuclear Information System (INIS)

    Ismat Shah, S.

    1991-01-01

    High T c films belonging to Y-Ba-Cu-O, Bi-Sr-Ca-Cu-O and Tl-Ba-Ca-Cu-O systems have been fabricated by reactive sputtering of single targets in a planar magnetron and Ar+O 2 sputtering atmosphere. Although it was possible to deposit films of correct composition, resputtering related composition variation was a problem. The key to obtaining correct chemistry was a proper control of the deposition parameters. The pressure and oxygen content of the sputtering gas were found to be the most critical parameters. Results of the variation of these parameters on the cation chemistry are presented in this paper. Results from Monte-Carlo simulation of the sputtering process are also presented showing that low pressure and oxygen content of the sputtering gas result in a higher yield of energetic reflected neutrals which can cause compositional variation in the film mainly due to preferential sputtering of the growing film. The effect was particularly noticeable directly underneath the target. The energetic particle bombardment can be controlled by using moderately high pressures and low oxygen concentration in the gas. (author). 11 refs., 7 figs

  10. The Planar Sandwich and Other 1D Planar Heat Flow Test Problems in ExactPack

    Energy Technology Data Exchange (ETDEWEB)

    Singleton, Jr., Robert [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2017-01-24

    This report documents the implementation of several related 1D heat flow problems in the verification package ExactPack [1]. In particular, the planar sandwich class defined in Ref. [2], as well as the classes PlanarSandwichHot, PlanarSandwichHalf, and other generalizations of the planar sandwich problem, are defined and documented here. A rather general treatment of 1D heat flow is presented, whose main results have been implemented in the class Rod1D. All planar sandwich classes are derived from the parent class Rod1D.

  11. Non-equilbrium behavior of low-pressure plasma jets

    International Nuclear Information System (INIS)

    Chang, C.H.; Pfender, E.

    1989-01-01

    After establishing the basic equations, some sample calculations are presented to examine the thermodynamic state of the plasma from atmospheric to low pressures (80 mbar). These results indicate the validity of local thermodynamic equilibrium (LTE) at atmospheric pressure as well as strong deviations from LTE at lower pressures especially in terms of chemical equilibrium. Departures from kinetic equilibrium are not as severe as those from chemical equilibrium along the centerline of the jet. However, there are some departures from transitional equilibrium in the fringes of the jet. It is demonstrated that conventional methods based on the LTE assumption are not appropriate for describing low-pressure plasma jets

  12. Proposal of limit moment equation applicable to planar/non-planar flaw in wall thinned pipes under bending

    International Nuclear Information System (INIS)

    Tsuji, Masataka; Meshii, Toshiyuki

    2011-01-01

    Highlights: → A limit moment equation applicable to planar/non-planar flaw of 0 ≤ θ ≤ π found in wall thinned straight pipes was proposed. → An idea to rationally classify planar/non-planar flaw in wall thinned pipes was proposed. → The equation based on the experimental observation focused on the fracture mode. - Abstract: In this paper, a limit bending moment equation applicable to all types of planar and non-planar flaws in wall-thinned straight pipes under bending was proposed. A system to rationally classify the planar/non-planar flaws in wall-thinned pipes was suggested based on experimental observations focused on the fracture mode. The results demonstrate the importance of distinguishing between axial and circumferential long flaws in wall-thinned pipes.

  13. Low friction coefficient coatings Ni-Cr by magnetron sputtering, DC

    Directory of Open Access Journals (Sweden)

    Morales-Hernández, Jorge

    2015-09-01

    Full Text Available Magnetron Sputter Deposition technique with DC was used for the deposition of Ni-Cr coatings on AISI 316 SS like substrate. The cathode with a nominal composition Ni-22 at% Cr was prepared by Mechanical Alloying (MA technique, with a maximum milling time of 16 hours and, with a high energy SPEX 8000 mill. The coatings were made under Argon atmosphere at room temperature with a power of 100 W at different times of growth. Chemical composition, microstructure, topography, nanohardness and wear of the coatings were evaluated using the techniques of microanalysis by energy dispersive X-ray analyzer (EDAX, X-Ray Diffraction (XRD, Atomic Force Microscopy (AFM, Nano-indentation and pin-on-Disk, respectively. After milling, was not detected contamination in the mixtures. XRD analysis revealed that the microstructure of the Ni-Cr alloy was maintained in the coatings with respect to MA powders, with some degree of recrystallization. Nanohardness values were in the order of 8.8 GPa with a Young’s modulus of 195 GPa. The adhesion of the films was evaluated according to their resistance to fracture when these were indented at different loads using Vickers microhardness. The wear test results showed a decrease in the friction coefficient with respect to the increase of thickness’ films, getting a minimum value of 0.08 with a thickness of 1 μm and which correspond with the maximum growing time.La técnica de Deposición por Chisporroteo Magnético (Magnetron Sputtering con el proceso DC, fue usado para la deposición de los recubrimientos de Ni-Cr sobre acero inoxidable AISI 316 como sustrato. El cátodo con una composición nominal Ni-22 at% Cr fue preparado por la técnica de Aleado Mecánico (AM, con un tiempo máximo de molienda de 16 horas y con un molino de alta energía tipo SPEX 8000. Las películas se realizaron bajo una atmósfera de argón a temperatura ambiente con una potencia de 100 W a diferentes tiempos de crecimiento. La composición qu

  14. Testing of low pressure proton exchange membrane fuel cells

    Energy Technology Data Exchange (ETDEWEB)

    Bettoni, M; Naso, V; Lucentini, M; Rubini, L

    1998-07-01

    One of the main issues concerning PEMFC is the choice of operating pressure, for both stationary and automotive applications. This is because the air compressor may absorb a significant amount--up to 25%--of the power output of the fuel cells stack. A comparison has been made between the performance of various stacks of different dimensions, tested in the De Nora Laboratories operated at high (4 bar) and low (1.5 bar) pressures, considering power output reduced by the compressor power absorption. Differences of performance and efficiency between high and low pressure stacks have been noticed in the range of 10%. In operating at low pressure, higher efficiency is obtainable, but the maximum power of the stack is less; this means less fuel consumption, but requires a greater reacting surface and larger dimension of the stack. Consequently low pressures make the system simpler (a blower can be used instead of a compressor), and safer (there is practically no risk of breaking the membrane).

  15. Low power consumption 4-channel variable optical attenuator array based on planar lightwave circuit technique

    International Nuclear Information System (INIS)

    Ren Mei-Zhen; Zhang Jia-Shun; An Jun-Ming; Wang Yue; Wang Liang-Liang; Li Jian-Guang; Wu Yuan-Da; Yin XiaoJie; Hu Xiong-Wei

    2017-01-01

    The power consumption of a variable optical attenuator (VOA) array based on a silica planar lightwave circuit was investigated. The thermal field profile of the device was optimized using the finite-element analysis. The simulation results showed that the power consumption reduces as the depth of the heat-insulating grooves is deeper, the up-cladding is thinner, the down-cladding is thicker, and the width of the cladding ridge is narrower. The materials component and thickness of the electrodes were also optimized to guarantee the driving voltage under 5 V. The power consumption was successfully reduced to as low as 155 mW at an attenuation of 30 dB in the experiment. (paper)

  16. Low-temperature sputtering of crystalline TiO2 films

    International Nuclear Information System (INIS)

    Musil, J.; Herman, D.; Sicha, J.

    2006-01-01

    This article reports on the investigation of reactive magnetron sputtering of transparent, crystalline titanium dioxide films. The aim of this investigation is to determine a minimum substrate surface temperature T surf necessary to form crystalline TiO 2 films with anatase structure. Films were prepared by dc pulsed reactive magnetron sputtering using a dual magnetron operating in bipolar mode and equipped with Ti(99.5) and ceramic Ti 5 O 9 targets. The films were deposited on unheated glass substrates and their structure was characterized by x-ray diffraction and surface morphology by atomic force microscopy. Special attention is devoted to the measurement of T surf using thermostrips pasted to the glass substrate. It was found that (1) T surf is considerably higher (approximately by 100 deg. C or more) than the substrate temperature T s measured by the thermocouple incorporated into the substrate holder and (2) T surf strongly depends on the substrate-to-target distance d s-t , the magnetron target power loading, and the thermal conductivity of the target and its cooling. The main result of this study is the finding that (1) the crystallization of sputtered TiO 2 films depends not only on T surf but also on the total pressure p T of sputtering gas (Ar+O 2 ), partial pressure of oxygen p O 2 , the film deposition rate a D , and the film thickness h (2) crystalline TiO 2 films with well developed anatase structure can be formed at T surf =160 deg. C and low values of a D ≅5 nm/min (3) the crystalline structure of TiO 2 film gradually changes from (i) anatase through (ii) anatase+rutile mixture, and (iii) pure rutile to x-ray amorphous structure at T surf =160 deg. C and p T =0.75 Pa when p O 2 decreases and a D increases above 5 nm/min, and (4) crystallinity of the TiO 2 films decreases with decreasing h and T surf . Interrelationships between the structure of TiO 2 film, its roughness, T surf , and a D are discussed in detail. Trends of next development are

  17. Experimental studies of thin films deposition by magnetron sputtering method for CIGS solar cell fabrication

    Science.gov (United States)

    Gułkowski, Sławomir; Krawczak, Ewelina

    2017-10-01

    Among a variety of the thin film solar cell technologies of second generation, copper-indium-gallium-diselenide device (CIGS) with the latest highest lab cell efficiency record of 22.4 % seems to be the most promising for the power generation. This is partly due to the advantages of using low cost films of few microns thick not only as a metallic contacts but also as a main structure of the solar cell consisted of high quality semiconductor layers. This paper reports the experimental studies of the CIGS absorber formation on Soda Lime Glass substrate covered by thin molybdenum film as a back contact layer. All structures were deposited with the use of magnetron sputtering method only. Technological parameters of the deposition process such as deposition power, pressure and deposition time were optimized for each layer of the structure. Mo back contact was examined in terms of resistivity. EDS measurements were carried out to verify stoichiometric composition of CIGS absorber. Thin film of Al was used as a top contact in order to examine the quality of p-n junction. The I-V electrical characteristic of the p-n junction was analysed in terms of solar cell application.

  18. High temperature oxidation resistance of magnetron-sputtered homogeneous CrAlON coatings on 430 steel

    Energy Technology Data Exchange (ETDEWEB)

    Garratt, E; Wickey, K J; Nandasiri, M I; Moore, A; AlFaify, S; Gao, X [Department of Physics, Western Michigan University, Kalamazoo, MI 49008 (United States); Smith, R J; Buchanan, T L; Priyantha, W; Kopczyk, M; Gannon, P E [Montana State University, Bozeman, MT, 59717 (United States); Kayani, A, E-mail: asghar.kayani@wmich.ed

    2009-11-01

    The requirements of low cost and high-temperature corrosion resistance for bipolar interconnect plates in solid oxide fuel cell stacks has directed attention to the use of metal plates with oxidation resistant coatings. We have investigated the performance of steel plates with homogenous coatings of CrAlON (oxynitrides). The coatings were deposited using RF magnetron sputtering, with Ar as a sputtering gas. Oxygen in these coatings was not intentionally added. Oxygen might have come through contaminated nitrogen gas bottle, leak in the chamber or from the partial pressure of water vapors. Nitrogen was added during the growth process to get oxynitride coating. The Cr/Al composition ratio in the coatings was varied in a combinatorial approach. The coatings were subsequently annealed in air for up to 25 hours at 800 {sup o}C. The composition of the coated plates and the rate of oxidation were characterized using Rutherford backscattering (RBS) and nuclear reaction analysis (NRA). Surface characterization was carried out using Atomic Force Microscopy (AFM) and surfaces of the coatings were found smooth on submicron scale. From our results, we conclude that Al rich coatings are more susceptible to oxidation than Cr rich coatings.

  19. Piezoresistive pressure sensor using low-temperature aluminium induced crystallization of sputter-deposited amorphous silicon film

    International Nuclear Information System (INIS)

    Tiwari, Ruchi; Chandra, Sudhir

    2013-01-01

    In the present work, we have investigated the piezoresistive properties of silicon films prepared by the radio frequency magnetron sputtering technique, followed by the aluminium induced crystallization (AIC) process. Orientation and grain size of the polysilicon films were studied by x-ray diffraction analysis and found to be in the range 30–50 nm. Annealing of the Al–Si stack on an oxidized silicon substrate was performed in air ambient at 300–550 °C, resulting in layer exchange and transformation from amorphous to polysilicon phase. Van der Pauw and Hall measurement techniques were used to investigate the sheet resistance and carrier mobility of the resulting polycrystalline silicon film. The effect of Al thickness on the sheet resistance and mobility was also studied in the present work. A piezoresistive pressure sensor was fabricated on an oxidized silicon substrate in a Wheatstone bridge configuration, comprising of four piezoresistors made of polysilicon film obtained by the AIC process. The diaphragm was formed by the bulk-micromachining of silicon substrate. The response of the pressure sensor with applied negative pressure in 10–95 kPa range was studied. The gauge factor was estimated to be 5 and 18 for differently located piezoresistors on the diaphragm. The sensitivity of the pressure sensor was measured to be ∼ 30 mV MPa −1 , when the Wheatstone bridge was biased at 1 V input voltage. (paper)

  20. Bimodular high temperature planar oxygen gas sensor

    Directory of Open Access Journals (Sweden)

    Xiangcheng eSun

    2014-08-01

    Full Text Available A bimodular planar O2 sensor was fabricated using NiO nanoparticles (NPs thin film coated yttria-stabilized zirconia (YSZ substrate. The thin film was prepared by radio frequency (r.f. magnetron sputtering of NiO on YSZ substrate, followed by high temperature sintering. The surface morphology of NiO nanoparticles film was characterized by atomic force microscopy (AFM and scanning electron microscopy (SEM. X-ray diffraction (XRD patterns of NiO NPs thin film before and after high temperature O2 sensing demonstrated that the sensing material possesses a good chemical and structure stability. The oxygen detection experiments were performed at 500 °C, 600 °C and 800 °C using the as-prepared bimodular O2 sensor under both potentiometric and resistance modules. For the potentiometric module, a linear relationship between electromotive force (EMF output of the sensor and the logarithm of O2 concentration was observed at each operating temperature, following the Nernst law. For the resistance module, the logarithm of electrical conductivity was proportional to the logarithm of oxygen concentration at each operating temperature, in good agreement with literature report. In addition, this bimodular sensor shows sensitive, reproducible and reversible response to oxygen under both sensing modules. Integration of two sensing modules into one sensor could greatly enrich the information output and would open a new venue in the development of high temperature gas sensors.

  1. Low temperature processed planar heterojunction perovskite solar cells employing silver nanowires as top electrode

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Jianhua; Li, Fushan, E-mail: fushanli@hotmail.com; Yang, Kaiyu; Veeramalai, Chandrasekar Perumal; Guo, Tailiang

    2016-04-30

    Graphical abstract: - Highlights: • All solution processed perovskite solar cells were realized with Ag nanowires. • ZnO nanoparticles were used as electron transport layer. • The solar cells showed a photovoltaic behavior with efficiency of 9.21%. • Device performance showed negligible difference between forward and reverse scan. - Abstract: In this paper, we reported a low temperature processed planar heterojunction perovskite solar cell employing silver nanowires as the top electrode and ZnO nanoparticles as the electron transport layer. The CH{sub 3}NH{sub 3}PbI{sub 3} perovskite was grown as the light absorber via two-step spin-coating technique. The as-fabricated perovskite solar cell exhibited the highest power conversion efficiency of 9.21% with short circuit current density of 19.75 mA cm{sup −2}, open circuit voltage of 1.02, and fill factor value of 0.457. The solar cell's performance showed negligible difference between the forward and reverse bias scan. This work paves a way for realizing low cost solution processable solar cells.

  2. Low-cost ZnO:Al transparent contact by reactive rotatable magnetron sputtering for Cu(In,Ga)Se2 solar modules

    International Nuclear Information System (INIS)

    Menner, R.; Hariskos, D.; Linss, V.; Powalla, M.

    2011-01-01

    Sputtering ZnO as transparent front contact (TCO) is standard in today's industrial scale Cu(In,Ga)Se 2 (CIGS) module manufacturing. Although innovative concepts like rotatable magnetron sputtering from ceramic targets have been realised, costs are still high due to expensive ceramic targets. Significant cost reductions are expected by using reactive sputtering of metallic targets. Therefore, ZSW and industrial partners investigated the reactive sputtering of Al-doped zinc oxide (ZAO) as TCO on CIGS absorbers of high quality and industrial relevance. The reactive DC sputtering from rotatable magnetron targets is controlled in the transition mode by adjusting oxygen flow and discharge voltage. Optimisation leads to ZAO films with a TCO quality nearly comparable to standard films deposited by DC ceramic sputtering. Scanning electron microscopy, X-ray diffraction, and Hall analyses of the ZAO films are performed. Medium-size CIGS modules are coated with reactively sputtered ZAO, resulting in 12.8% module efficiency and surpassing the efficiency of the ceramic witness device. Cd-free buffered devices are also successfully coated with reactive TCO. Damp heat stability according to IEC61646 is met by all reactively sputtered devices.

  3. Quality Management and Control of Low Pressure Cast Aluminum Alloy

    Science.gov (United States)

    Zhang, Dianxi; Zhang, Yanbo; Yang, Xiufan; Chen, Zhaosong; Jiang, Zelan

    2018-01-01

    This paper briefly reviews the history of low pressure casting and summarizes the major production processes of low pressure casting. It briefly introduces the quality management and control of low pressure cast aluminum alloy. The main processes include are: preparation of raw materials, Melting, refining, physical and chemical analysis, K-mode inspection, sand core, mold, heat treatment and so on.

  4. Variability in DMSA reporting following urinary tract infection in children: pinhole, planar, and pinhole with planar

    International Nuclear Information System (INIS)

    Rossleigh, M.A.; Christian, C.L.; Craig, J.C.; Howman-Giles, R.B.; Grunewald, S.

    2004-01-01

    Purpose: To determine whether the provision of DMSA images obtained by pinhole collimation reduces inter-observer variability of reporting compared with planar DMSA images alone. Methods: One hundred consecutive DMSA images were independently interpreted three times (pinhole alone, planar alone, pinhole and planar) by four participating nuclear medicine specialists from different departments and in random order. The presence or absence of renal parenchymal abnormality was classified using the modified four level grading system of Goldraich with mean values for the 6 comparisons reported. Results: The proportion of DMSA images interpreted as abnormal was 31% for planar, 34% for pinhole and 33% for planar with pinhole. Agreement was 89% for planar alone, 89% for pinhole alone and 90% for planar with pinhole, with kappa values 0.74, 0.75 and 0.80 respectively for the normal-abnormal scan classification of individual children. These results did not vary appreciably whether interpretation of patients, kidneys or kidney zones was compared. Reasons for disagreement in reporting included different interpretations of 'abnormalities' as normal anatomical variations (splenic impression, fetal lobulation, duplex collecting systems, column of Bertin) or true parenchymal abnormalities, different adjustments in thresholds for reporting abnormality when images were technically suboptimal, different weighting given to pinhole and planar images when both were provided, and error. Conclusion: Four experienced nuclear medicine physicians showed substantial agreement in the interpretation of planar alone, pinhole alone and planar with pinhole DMSA images, but the provision of both sets of images, planar and pinhole, did not reduce variability. (authors)

  5. A two-input sliding-mode controller for a planar arm actuated by four pneumatic muscle groups.

    Science.gov (United States)

    Lilly, John H; Quesada, Peter M

    2004-09-01

    Multiple-input sliding-mode techniques are applied to a planar arm actuated by four groups of pneumatic muscle (PM) actuators in opposing pair configuration. The control objective is end-effector tracking of a desired path in Cartesian space. The inputs to the system are commanded input pressure differentials for the two opposing PM groups. An existing model for the muscle is incorporated into the arm equations of motion to arrive at a two-input, two-output nonlinear model of the planar arm that is affine in the input and, therefore, suitable for sliding-mode techniques. Relationships between static input pressures are derived for suitable arm behavior in the absence of a control signal. Simulation studies are reported.

  6. Dependence of the constitution, microstructure and electrochemical behaviour of magnetron sputtered Li-Ni-Mn-Co-O thin film cathodes for lithium-ion batteries on the working gas pressure and annealing conditions

    Energy Technology Data Exchange (ETDEWEB)

    Strafela, Marc; Fischer, Julian; Leiste, Harald; Rinke, Monika; Bergfeldt, Thomas; Seifert, Hans Juergen; Ulrich, Sven [Karlsruhe Institute of Technology (KIT), Karlsruhe (Germany). Inst. for Applied Materials (IAM); Music, Denis; Chang, Keke; Schneider, Jochen [RWTH Aachen Univ. (Germany). Materials Chemistry

    2017-11-15

    Li(Ni{sub 1/3}Mn{sub 1/3}Co{sub 1/3})O{sub 2} as a cathode material for lithium ion batteries shows good thermal stability, high reversible capacity (290 mAh g{sup -1}), good rate capability and better results in terms of environmental friendliness. In this paper thin film cathodes in the material system Li-Ni-Mn-Co-O were deposited onto silicon and stainless steel substrates, by non-reactive r.f. magnetron sputtering from a ceramic Li{sub 1.18}(Ni{sub 0.39}Mn{sub 0.19}Co{sub 0.35})O{sub 1.97} target at various argon working gas pressures between 0.2 Pa and 20 Pa. A comprehensive study on the composition and microstructure was carried out. The results showed that the elemental composition varies depending on argon working gas pressure. The elemental composition was determined by inductively coupled plasma optical emission spectroscopy in combination with carrier gas hot extraction. The films showed different grain orientations depending argon working gas pressures. The degree of cation order in the lattice structure of the films deposited at 0.5 Pa and 7 Pa argon working gas pressure, was increased by annealing in an argon/oxygen atmosphere at different pressures for one hour. The microstructure of the films varies with annealing gas pressure and is characterized using X-ray diffraction and unpolarized micro-Raman spectroscopy at room temperature. Electrochemical characterization of as-deposited and annealed films was carried out by galvanostatic cycling in Li-Ni-Mn-Co-O half-cells against metallic lithium. Correlations between process parameters, constitution, microstructure and electrochemical behaviour are discussed in detail.

  7. Simulation Study Using an Injection Phase-locked Magnetron as an Alternative Source for SRF Accelerators

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Haipeng [Thomas Jefferson National Accelerator Facility, Newport News, VA (United States); Plawski, Tomasz E. [Thomas Jefferson National Accelerator Facility, Newport News, VA (United States); Rimmer, Robert A. [Thomas Jefferson National Accelerator Facility, Newport News, VA (United States)

    2015-09-01

    As a drop-in replacement for the CEBAF CW klystron system, a 1497 MHz, CW-type high-efficiency magnetron using injection phase lock and amplitude variation is attractive. Amplitude control using magnetic field trimming and anode voltage modulation has been studied using analytical models and MATLAB/Simulink simulations. Since the 1497 MHz magnetron has not been built yet, previously measured characteristics of a 2.45GHz cooker magnetron are used as reference. The results of linear responses to the amplitude and phase control of a superconducting RF (SRF) cavity, and the expected overall benefit for the current CEBAF and future MEIC RF systems are presented in this paper.

  8. Computer analysis, design and construction of the BNL Mk V magnetron

    International Nuclear Information System (INIS)

    McKenzie-Wilson, R.B.; Kovarik, V.J.

    1981-01-01

    As part of a program to develop a high energy neutral beam injector for fusion reactor applications, the BNL Neutral Beam Group is studying, among other options, a surface plasma source of the magnetron type. This source has been developed to the point at which a large compact model, known as the Mk V magnetron, has been designed and constructed. The source is designed to operate in the steady state mode and to produce 1-2A of H - (D - ) ions at 25 kV. Under these conditions, 18 KW of heat are removed from the source by the cooling system

  9. Symmetric low-voltage powering system for relativistic electronic devices

    International Nuclear Information System (INIS)

    Agafonov, A.V.; Lebedev, A.N.; Krastelev, E.G.

    2005-01-01

    A special driver for double-sided powering of relativistic magnetrons and several methods of localized electron flow forming in the interaction region of relativistic magnetrons are proposed and discussed. Two experimental installations are presented and discussed. One of them is designed for laboratory research and demonstration experiments at a rather low voltage. The other one is a prototype of a full-scale installation for an experimental research at relativistic levels of voltages on the microwave generation in the new integrated system consisting of a relativistic magnetron and symmetrical induction driver

  10. Planar Bragg Grating Sensors—Fabrication and Applications: A Review

    Directory of Open Access Journals (Sweden)

    I. J. G. Sparrow

    2009-01-01

    Full Text Available We discuss the background and technology of planar Bragg grating sensors, reviewing their development and describing the latest developments. The physical operating principles are discussed, relating device operation to user requirements. Recent performance of such devices includes a planar Bragg grating sensor design which allows refractive index resolution of 1.9×10−6 RIU and temperature resolution of 0.03∘C. This sensor design is incorporated into industrialised applications allowing the sensor to be used for real time sensing in intrinsically safe, high-pressure pipelines, or for insertion probe applications such as fermentation. Initial data demonstrating the ability to identify solvents and monitor long term industrial processes is presented. A brief review of the technology used to fabricate the sensors is given along with examples of the flexibility afforded by the technique.

  11. Spatial survey of a magnetron plasma sputtering system using a Langmuir probe

    International Nuclear Information System (INIS)

    Field, D.J.; Dew, S.K.; Burrell, R.E.

    2002-01-01

    A two-dimensional spatial survey is conducted for a magnetron sputtering plasma at two pressures (40 and 5 mTorr) using a Langmuir probe. The plasma density is found to be highest (up to 6.0x10 10 cm -3 ) above the etch region of the cathode, near the magnetic trap. The density drops between the etch regions, near the edges of the cathode and also at distances farther away from the cathode. The floating potential was found to be most negative (down to -12 V) in regions where the highest electron temperatures were observed (up to almost 4 eV) and became less negative (near 0 V) in regions where the electron temperature was lowest (less than 0.5 eV). This complementary trend was consistent in all spatial locations and at both pressures. The plasma potential was found to have very weak dependence, if any, on spatial location and pressure. The relationship between electron transport processes, collision processes and electron temperatures is discussed. Electron energy distribution functions were found to be either Maxwellian or bi-Maxwellian in nature, depending on pressure and spatial location. Maxwellian distributions were found near the magnetic trap or source of the plasma. Bi-Maxwellian distributions were found further away from the source, and it appears they result from Maxwellian distributions bifurcating as they diffuse away from the source. The suitability of the popular models for this bifurcation is discussed

  12. Dielectric properties of DC reactive magnetron sputtered Al{sub 2}O{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Prasanna, S. [Thin Film Center, Department of Physics, PSG College of Technology, Coimbatore, 641 004 (India); Mohan Rao, G. [Department of Instrumentation, Indian Institute of Science (IISc), Bangalore, 560 012 (India); Jayakumar, S., E-mail: s_jayakumar_99@yahoo.com [Thin Film Center, Department of Physics, PSG College of Technology, Coimbatore, 641 004 (India); Kannan, M.D. [Thin Film Center, Department of Physics, PSG College of Technology, Coimbatore, 641 004 (India); Ganesan, V. [Low Temperature Lab, UGC-DAE Consortium for Scientific Research (CSR), Indore, 452 017 (India)

    2012-01-31

    Alumina (Al{sub 2}O{sub 3}) thin films were sputter deposited over well-cleaned glass and Si < 100 > substrates by DC reactive magnetron sputtering under various oxygen gas pressures and sputtering powers. The composition of the films was analyzed by X-ray photoelectron spectroscopy and an optimal O/Al atomic ratio of 1.59 was obtained at a reactive gas pressure of 0.03 Pa and sputtering power of 70 W. X-ray diffraction results revealed that the films were amorphous until 550 Degree-Sign C. The surface morphology of the films was studied using scanning electron microscopy and the as-deposited films were found to be smooth. The topography of the as-deposited and annealed films was analyzed by atomic force microscopy and a progressive increase in the rms roughness of the films from 3.2 nm to 4.53 nm was also observed with increase in the annealing temperature. Al-Al{sub 2}O{sub 3}-Al thin film capacitors were then fabricated on glass substrates to study the effect of temperature and frequency on the dielectric property of the films. Temperature coefficient of capacitance, AC conductivity and activation energy were determined and the results are discussed. - Highlights: Black-Right-Pointing-Pointer Al{sub 2}O{sub 3} thin films were deposited by DC reactive magnetron sputtering. Black-Right-Pointing-Pointer The films were found to be amorphous up to annealing temperature of 550 C. Black-Right-Pointing-Pointer An increase in rms roughness of the films was observed with annealing. Black-Right-Pointing-Pointer Al-Al{sub 2}O{sub 3}-Al thin film capacitors were fabricated and dielectric constant was 7.5. Black-Right-Pointing-Pointer The activation energy decreased with increase in frequency.

  13. Properties of thick GEM in low-pressure deuterium

    International Nuclear Information System (INIS)

    Lee, C S; Ota, S; Tokieda, H; Kojima, R; Watanabe, Y N; Uesaka, T

    2014-01-01

    Deuteron inelastic scattering (d, d') provides a promising spectroscopic tool to study nuclear incompressibility. In studies of deuteron inelastic scattering of unstable nuclei, measurements of low-energy recoiled particles is very important. In order to perform these measurements, we are developing a GEM-TPC based gaseous active target, called CAT (Center for nuclear study Active Target), operated with pure deuterium gas. The CAT has been tested with deuterium gas at 1 atm and 100-μm-thick GEMs. The low-pressure operation of CAT is planned in order to improve the detection capability for lower-energy recoil particles. A 400 μm-thick gas electron multiplier (THGEM) was chosen for the low-pressure operation of CAT. However, the properties of THGEM in low-pressure deuterium are currently undocumented. In this work, the performance of THGEM with low-pressure pure deuterium gas has been investigated. The effective gas gain of THGEM has been measured in various conditions using a 5.5-MeV 241 Am alpha source. The effective gas gain was measured for 0.2-, 0.3- and 0.4-atm deuterium gas and a gas gain of about 10 3 was achieved by a double THGEM structure at 0.2 atm. The maximum achieved gain decreased with increasing gas pressure. The dependences of the effective gas gain on the electric field strengths of the drift, transfer and induction regions were investigated. The gain stability as a function of time in hydrogen gas was also tested and a relaxation time of THGEM of about 60 hours was observed with a continuous irradiation of alpha particles, which is significantly longer than previous studies have reported. We have tried to evaluate the gas gain of THGEM in deuterium gas by considering only the Townsend ionization process; however, it turned out that more phenomenological aspects, such as transfer efficiency, should be included in the evaluation. The basic properties of THGEM in low-pressure deuterium have been investigated for the first time

  14. Properties of thick GEM in low-pressure deuterium

    Science.gov (United States)

    Lee, C. S.; Ota, S.; Tokieda, H.; Kojima, R.; Watanabe, Y. N.; Uesaka, T.

    2014-05-01

    Deuteron inelastic scattering (d, d') provides a promising spectroscopic tool to study nuclear incompressibility. In studies of deuteron inelastic scattering of unstable nuclei, measurements of low-energy recoiled particles is very important. In order to perform these measurements, we are developing a GEM-TPC based gaseous active target, called CAT (Center for nuclear study Active Target), operated with pure deuterium gas. The CAT has been tested with deuterium gas at 1 atm and 100-μm-thick GEMs. The low-pressure operation of CAT is planned in order to improve the detection capability for lower-energy recoil particles. A 400 μm-thick gas electron multiplier (THGEM) was chosen for the low-pressure operation of CAT. However, the properties of THGEM in low-pressure deuterium are currently undocumented. In this work, the performance of THGEM with low-pressure pure deuterium gas has been investigated. The effective gas gain of THGEM has been measured in various conditions using a 5.5-MeV 241Am alpha source. The effective gas gain was measured for 0.2-, 0.3- and 0.4-atm deuterium gas and a gas gain of about 103 was achieved by a double THGEM structure at 0.2 atm. The maximum achieved gain decreased with increasing gas pressure. The dependences of the effective gas gain on the electric field strengths of the drift, transfer and induction regions were investigated. The gain stability as a function of time in hydrogen gas was also tested and a relaxation time of THGEM of about 60 hours was observed with a continuous irradiation of alpha particles, which is significantly longer than previous studies have reported. We have tried to evaluate the gas gain of THGEM in deuterium gas by considering only the Townsend ionization process; however, it turned out that more phenomenological aspects, such as transfer efficiency, should be included in the evaluation. The basic properties of THGEM in low-pressure deuterium have been investigated for the first time.

  15. Wafer-level hermetic thermo-compression bonding using electroplated gold sealing frame planarized by fly-cutting

    Science.gov (United States)

    Farisi, Muhammad Salman Al; Hirano, Hideki; Frömel, Jörg; Tanaka, Shuji

    2017-01-01

    In this paper, a novel wafer-level hermetic packaging technology for heterogeneous device integration is presented. Hermetic sealing is achieved by low-temperature thermo-compression bonding using electroplated Au micro-sealing frame planarized by single-point diamond fly-cutting. The proposed technology has significant advantages compared to other established processes in terms of integration of micro-structured wafer, vacuum encapsulation and electrical interconnection, which can be achieved at the same time. Furthermore, the technology is also achievable for a bonding frame width as narrow as 30 μm, giving it an advantage from a geometry perspective, and bonding temperatures as low as 300 °C, making it advantageous for temperature-sensitive devices. Outgassing in vacuum sealed cavities is studied and a cavity pressure below 500 Pa is achieved by introducing annealing steps prior to bonding. The pressure of the sealed cavity is measured by zero-balance method utilizing diaphragm-structured bonding test devices. The leak rate into the packages is determined by long-term sealed cavity pressure measurement for 1500 h to be less than 2.0× {{10}-14} Pa m3s-1. In addition, the bonding shear strength is also evaluated to be higher than 100 MPa.

  16. Is the use of low-pressure pulsatile lavage for pressure ulcer management associated with environmental contamination with Acinetobacter baumannii?

    Science.gov (United States)

    Ho, Chester H; Johnson, Tova; Miklacic, Joan; Donskey, Curtis J

    2009-10-01

    Ho CH, Johnson T, Miklacic J, Donskey CJ. Is the use of low-pressure pulsatile lavage for pressure ulcer management associated with environmental contamination with Acinetobacter baumannii? To determine the extent of environmental contamination associated with low-pressure pulsatile lavage of stage III or IV pressure ulcers in patients with spinal cord injury (SCI) when routine infection control precautions are used for wounds colonized or infected with Acinetobacter baumannii. Prospective investigation in which pressure ulcer cultures and environmental cultures were obtained before and after low-pressure pulsatile lavage treatment, and before and after regular dressing changes. Environmental cultures included the patient's bedrail and settle plates placed 0.6, 1.5, and 2.4m from the wound to assess airborne spread of A. baumannii. SCI inpatient unit in a Department of Veterans Affairs Medical Center. Inpatients (N=15) with SCI receiving daily low-pressure pulsatile lavage treatment for stage III or IV pressure ulcers with standard dressing change, as well as regular dressing changes without low-pressure pulsatile lavage at other times of the day. Standard, regular dressing changes and dressing changes with low-pressure pulsatile lavage. Comparison of frequency of environmental contamination with A. baumannii associated with low-pressure pulsatile lavage versus regular dressing changes. Of the 15 SCI inpatients meeting inclusion criteria, 9 (60%) grew A. baumannii from their wounds. Of the 9 patients with wound cultures positive for A. baumannii, only 1 (11%) had environmental contamination with this organism after performance of low-pressure pulsatile lavage, and the same patient had environmental contamination after a standard dressing change. The antibiotic susceptibility patterns of the wound and environmental A. baumannii isolates were identical. Low-pressure pulsatile lavage using the infection control methods described is not associated with an increased

  17. How to draw a planarization

    NARCIS (Netherlands)

    Bläsius, T.; Radermacher, M.; Rutter, I.; Steffen, B.; Baier, C.; van den Brand, M.; Eder, J.; Hinchey, M.; Margaria, T.

    2017-01-01

    We study the problem of computing straight-line drawings of non-planar graphs with few crossings. We assume that a crossing-minimization algorithm is applied first, yielding a planarization, i.e., a planar graph with a dummy vertex for each crossing, that fixes the topology of the resulting drawing.

  18. Magnetic field effects on coating deposition rate and surface morphology coatings using magnetron sputtering

    International Nuclear Information System (INIS)

    Yang, Yu-Sen; Huang, Wesley

    2010-01-01

    Chromium nitride coatings exhibit superior hardness, excellent wear and oxidation resistance, and are widely applied in the die and mold industries. The aim of this study was to investigate magnetic field effects on the deposition rate and surface morphology of chromium nitride coatings deposited by magnetron sputtering. Four types of magnetic field configurations, including the magnetron sputtering system, SNSN, SNNN, and intermediate magnetron modification, are discussed in this paper. SKD11 cold work die steel and a silicon (100) chip were used as substrates in the chromium nitride depositions. The process parameters, such as target current, substrate bias, and the distance between the substrate and target, are at fixed conditions, except for the magnetic arrangement type. The experimental results showed that the deposition rates of the four types of magnetic field configurations were 1.06, 1.38, 1.67 and 1.26 µm h −1 , respectively. In these cases, the SNNN type performs more than 58% faster than the unbalanced magnetron configuration does for the deposition rate. The surface morphology of chromium nitride films was also examined by SEM and is discussed in this paper

  19. A global plasma model for reactive deposition of compound films by modulated pulsed power magnetron sputtering discharges

    Science.gov (United States)

    Zheng, B. C.; Wu, Z. L.; Wu, B.; Li, Y. G.; Lei, M. K.

    2017-05-01

    A spatially averaged, time-dependent global plasma model has been developed to describe the reactive deposition of a TiAlSiN thin film by modulated pulsed power magnetron sputtering (MPPMS) discharges in Ar/N2 mixture gas, based on the particle balance and the energy balance in the ionization region, and considering the formation and erosion of the compound at the target surface. The modeling results show that, with increasing the N2 partial pressure from 0% to 40% at a constant working pressure of 0.3 Pa, the electron temperature during the strongly ionized period increases from 4 to 7 eV and the effective power transfer coefficient, which represents the power fraction that effectively heats the electrons and maintains the discharge, increases from about 4% to 7%; with increasing the working pressure from 0.1 to 0.7 Pa at a constant N2 partial pressure of 25%, the electron temperature decreases from 10 to 4 eV and the effective power transfer coefficient decreases from 8% to 5%. Using the modeled plasma parameters to evaluate the kinetic energy of arriving ions, the ion-to-neutral flux ratio of deposited species, and the substrate heating, the variations of process parameters that increase these values lead to an enhanced adatom mobility at the target surface and an increased input energy to the substrate, corresponding to the experimental observation of surface roughness reduction, the microstructure transition from the columnar structure to the dense featureless structure, and the enhancement of phase separation. At higher N2 partial pressure or lower working pressure, the modeling results demonstrate an increase in electron temperature, which shifts the discharge balance of Ti species from Ti+ to Ti2+ and results in a higher return fraction of Ti species, corresponding to the higher Al/Ti ratio of deposited films at these conditions. The modeling results are well correlated with the experimental observation of the composition variation and the microstructure

  20. Polyester fabric coated with Ag/ZnO composite film by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Yuan, Xiaohong, E-mail: yxhong1981_2004@126.com [Key Laboratory of Eco-Textiles, Ministry of Education, Jiangnan University, Wuxi 214122, Jiangsu (China); Faculty of Clothing and Design, Minjiang University, Fuzhou 350121, Fujian (China); Xu, Wenzheng, E-mail: xwz8199@126.com [Key Laboratory of Eco-Textiles, Ministry of Education, Jiangnan University, Wuxi 214122, Jiangsu (China); Huang, Fenglin, E-mail: windhuang325@163.com [Key Laboratory of Eco-Textiles, Ministry of Education, Jiangnan University, Wuxi 214122, Jiangsu (China); Chen, Dongsheng, E-mail: mjuchen@126.com [Faculty of Clothing and Design, Minjiang University, Fuzhou 350121, Fujian (China); Wei, Qufu, E-mail: qfwei@jiangnan.edu.cn [Key Laboratory of Eco-Textiles, Ministry of Education, Jiangnan University, Wuxi 214122, Jiangsu (China)

    2016-12-30

    Highlights: • Ag/ZnO composite film was successfully deposited on polyester fabric by magnetron sputtering technique. • Ag film was easily oxidized into Ag{sub 2}O film in high vacuum oxygen environment. • The zinc film coated on the surface of Ag film before RF reactive sputtering could protect the silver film from oxidation. • Polyester fabric coated with Ag/ZnO composite film can obtained structural color. • The anti-ultraviolet and antistatic properties of polyester fabric coated with Ag/ZnO composite film all were good. - Abstract: Ag/ZnO composite film was successfully deposited on polyester fabric by using direct current (DC) magnetron sputtering and radio frequency (RF) magnetron reaction sputtering techniques with pure silver (Ag) and zinc (Zn) targets. X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) were used to examine the deposited film on the fabric. It was found that the zinc film coated on Ag film before RF reactive sputtering could protect the silver film from oxidation. Anti-ultraviolet property and antistatic property of the coated samples using different magnetron sputtering methods were also investigated. The experimental results showed that Ag film was oxidized into in Ag{sub 2}O film in high vacuum oxygen environment. The deposition of Zn film on the surface of the fabric coated with Ag film before RF reactive sputtering, could successfully obtained Ag/ZnO composite film, and also generated structural color on the polyester fabric.

  1. Exploring the limits: A low-pressure, low-temperature Haber-Bosch process

    Science.gov (United States)

    Vojvodic, Aleksandra; Medford, Andrew James; Studt, Felix; Abild-Pedersen, Frank; Khan, Tuhin Suvra; Bligaard, T.; Nørskov, J. K.

    2014-04-01

    The Haber-Bosch process for ammonia synthesis has been suggested to be the most important invention of the 20th century, and called the ‘Bellwether reaction in heterogeneous catalysis’. We examine the catalyst requirements for a new low-pressure, low-temperature synthesis process. We show that the absence of such a process for conventional transition metal catalysts can be understood as a consequence of a scaling relation between the activation energy for N2 dissociation and N adsorption energy found at the surface of these materials. A better catalyst cannot obey this scaling relation. We define the ideal scaling relation characterizing the most active catalyst possible, and show that it is theoretically possible to have a low pressure, low-temperature Haber-Bosch process. The challenge is to find new classes of catalyst materials with properties approaching the ideal, and we discuss the possibility that transition metal compounds have such properties.

  2. Design of special planar linkages

    CERN Document Server

    Zhao, Jing-Shan; Ma, Ning; Chu, Fulei

    2013-01-01

    Planar linkages play a very important role in mechanical engineering. As the simplest closed chain mechanisms, planar four-bar linkages are widely used in mechanical engineering, civil engineering and aerospace engineering.Design of Special Planar Linkages proposes a uniform design theory for planar four-bar linkages. The merit of the method proposed in this book is that it allows engineers to directly obtain accurate results when there are such solutions for the specified n precise positions; otherwise, the best approximate solutions will be found. This book discusses the kinematics and reach

  3. Effect of N Concentration on Microstructure Evolution of the Nanostructured (Al, Ti, SiN Coatings Prepared by d.c. Reactive Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    L. Jakab-Farkas

    2009-12-01

    Full Text Available Nanostructured (Al, Ti, SiN thin film coatings were synthesized by d.c. reactive magnetron sputtering, performed in an Ar/N2 gas mixture from a planar rectangular Al:Ti:Si=50:25:25 alloyed target. The mass flow of N2 reactive gas was strictly controlled in sputtering process. Conventional transmission electron microscopy (TEM technique was used for microstructure investigation of the as deposited films. Cross-sectional cuts performed through the deposited films revealed distinct microstructure evolution for different samples. It was found that the variation of the reactive gas amount induced changes in film microstructure. The metallic AlTiSi film exhibited strong columnar growth with a crystalline structure. The addition of a small amount of nitrogen to the process gas leads to a crystallite refinement. Further increase of N concentration resulted in evolution of fine lamellae growth morphology consisting of hainlike pearls in a dendrite, clusters of very fine grains in close crystallographic orientation.

  4. Spatially resolved electron density and electron energy distribution function in Ar magnetron plasmas used for sputter-deposition of ZnO-based thin films

    Energy Technology Data Exchange (ETDEWEB)

    Maaloul, L.; Gangwar, R. K.; Morel, S.; Stafford, L., E-mail: luc.stafford@umontreal.ca [Département de Physique, Université de Montréal, Montréal, Québec H3C 3J7 (Canada)

    2015-11-15

    Langmuir probe and trace rare gases optical emission spectroscopy were used to analyze the spatial structure of the electron density and electron energy distribution function (EEDF) in a cylindrical Ar magnetron plasma reactor used for sputter-deposition of ZnO-based thin films. While a typical Bessel (zero order) diffusion profile was observed along the radial direction for the number density of charged particles at 21 cm from the ZnO target, a significant rise of these populations with respect to the Bessel function was seen in the center of the reactor at 4 cm from the magnetron surface. As for the EEDF, it was found to transform from a more or less Maxwellian far from the target to a two-temperature Maxwellian with a depletion of high-energy electrons where magnetic field confinement effects become important. No significant change in the behavior of the electron density and EEDF across a wide range of pressures (5–100 mTorr) and self-bias voltages (115–300 V) was observed during magnetron sputtering of Zn, ZnO, and In{sub 2}O{sub 3} targets. This indicates that sputtering of Zn, In, and O atoms do not play a very significant role on the electron particle balance and electron heating dynamics, at least over the range of experimental conditions investigated.

  5. SERS spectra of pyridine adsorbed on nickel film prepared by magnetron sputtering

    Science.gov (United States)

    Li, Daoyong; Ouyang, Yu; Chen, Li; Cao, Weiran; Shi, Shaohua

    2011-02-01

    As a repeating well and cheaper enhancement substrate, the nickel film was fabricated with magnetron sputtering coating instrument. Surface enhanced Raman spectra (SERS) of pyridine adsorbed on this nickel film are compared with the experimental values of gaseous pyridine, the theoretical value of pyridine solution listed in other literatures and our method is better than electro-chemical etching electrode method for large scale preparation. The enhancement factor of the nickel film is calculated and the result indicates that magnetron sputtering coating technology is feasible for obtaining good SERS active surface.

  6. Low- and high-index sol-gel films for planar and channel-doped waveguides

    Science.gov (United States)

    Canva, Michael; Chaput, Frederic; Lahlil, Khalid; Rachet, Vincent; Goudket, Helene; Boilot, Jean-Pierre; Levy, Yves

    2001-11-01

    In view of realizing integrated optic components based on effects such as electro-optic, chi(2):chi(2) cascading, stimulated emission,... one has to first synthesize materials with the proper functionality; this may be achieved by doping solid state matrices by the appropriate organic chromophores. Second, and as important, these materials have to be properly structured into the final optical guiding structures. We shall report on issues related to the realization of chromophore-doped planar waveguides as well as channel waveguides. These structures were realized by either photo-transformation such as photo- chromism and photo-bleaching or reactive ion etching technique, starting with chromophore doped sol-gel materials at high loading contents for which optical index may be controlled via the local dopant concentration. With these materials and techniques, waveguides and components characterized by propagation losses of the order of a cm-1, measured off the edge of the absorption band of the doping species, were fabricated. In order to be also able to study and use waveguide functionalized with low concentration of chromophore species, we developed new sol-gel materials of high optical index, yet low temperature processed. These new films are under study to evaluate their potential as host for organic doped waveguides devices.

  7. Corrosion resistance of CrN thin films produced by dc magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Ruden, A. [Laboratorio de Física del Plasma, Universidad Nacional de Colombia Sede Manizales, Km. 9 vía al Magdalena, Manizales (Colombia); Laboratorio de Recubrimientos Duros y Aplicaciones Industriales–RDAI, Universidad del Valle, Calle 13 N° 100-00 Ciudadela Meléndez, Cali (Colombia); Departamento de matemáticas, Universidad Tecnológica de Pereira, Pereira (Colombia); Restrepo-Parra, E., E-mail: erestrepopa@unal.edu.co [Laboratorio de Física del Plasma, Universidad Nacional de Colombia Sede Manizales, Km. 9 vía al Magdalena, Manizales (Colombia); Paladines, A.U.; Sequeda, F. [Laboratorio de Recubrimientos Duros y Aplicaciones Industriales–RDAI, Universidad del Valle, Calle 13 N° 100-00 Ciudadela Meléndez, Cali (Colombia)

    2013-04-01

    In this study, the electrochemical behavior of chromium nitride (CrN) coatings deposited on two steel substrates, AISI 304 and AISI 1440, was investigated. The CrN coatings were prepared using a reactive d.c. magnetron sputtering deposition technique at two different pressures (P1 = 0.4 Pa and P2 = 4 Pa) with a mixture of N{sub 2}–Ar (1.5-10). The microstructure and crystallinity of the CrN coatings were investigated using X-ray diffraction. The aqueous corrosion behavior of the coatings was evaluated using two methods. The polarization resistance (Tafel curves) and electrochemical impedance spectra (EIS) in a saline (3.5% NaCl solution) environment were measured in terms of the open-circuit potentials and polarization resistance (R{sub p}). The results indicated that the CrN coatings present better corrosion resistance and R{sub p} values than do the uncoated steel substrates, especially for the coatings produced on the AISI 304 substrates, which exhibited a strong enhancement in the corrosion resistance. Furthermore, better behavior was observed for the coatings produced at lower pressures (0.4 Pa) than those grown at 4 Pa.

  8. Operational experience with the BNL magnetron H- source

    International Nuclear Information System (INIS)

    Witkover, R.L.

    1983-01-01

    A magnetron H - source with a grooved cathode has been in operation at the BNL Linac for over 18 months. The source has run at 5 pps with a 600 μsec pulse width for periods as long as 5 months. Its development and performance will be discussed

  9. Effects of Al concentrations on the microstructure and mechanical properties of Ti–Al–N films deposited by RF-ICPIS enhanced magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Li, Dongke [The School of Physics and Telecommunication Engineering, SCNU, Guangzhou 510000 (China); Chen, JunFang, E-mail: chenjf@scnu.edu.com [The School of Physics and Telecommunication Engineering, SCNU, Guangzhou 510000 (China); Research Resources Center, SCNU, Guangzhou 510000 (China); Zou, Changwei, E-mail: qingyihaiyanas@163.com [Department of Physics and Development Center for New Materials Engineering and Technology in University of Guangdong, Zhanjiang Normal University, Zhanjiang 524048 (China); Ma, Junhui; Li, Pengfei; Li, Ye [The School of Physics and Telecommunication Engineering, SCNU, Guangzhou 510000 (China)

    2014-10-01

    Highlights: • RF-ICPIS enhanced magnetron sputtering technique is used for Ti–Al–N deposition. • Al contents has closed relation with total gas pressure. • Ti–Al–N films with high Al contents of 34.16 at.% are obtained. • Effects of Al on the microstructure and mechanical properties are discussed. - Abstract: Ti–Al–N films were deposited on Si (1 0 0) and mirror-polished stainless steel at 300 °C by RF-ICPIS enhanced magnetron sputtering technique. Focusing on the effects of Al concentrations on the microstructure and mechanical properties of Ti–Al–N films, the structure and the growth morphology were characterized by X-ray diffraction (XRD) and field emission scanning electron microscope (FESEM). Ti–Al–N films with highest Al contents of were deposited at total gas pressure of 1.0 Pa. XRD experiments exhibited that the Ti–Al–N films were f.c.c structure with diffraction peaks at 2θ = 37.1°, 43.5°, 63.2°, and 75.1°, respectively. The FWHM values of (1 1 1) diffraction peaks showed a decrease while the (2 2 0) diffraction peaks showed an increase trend with the increasing of Al concentrations. With the variation of total gas pressure from 0.5 to 1.5 Pa, the RMS values of Ti–Al–N films increased from 1.286 to 7.751 nm. The hardness of the Ti–Al–N films was in the range of 28.4–36.2 GPa while the friction coefficients were in the range of 0.339–0.732.

  10. Deposition and characterization of single magnetron deposited Fe:SnO{sub x} coatings

    Energy Technology Data Exchange (ETDEWEB)

    Kormunda, Martin, E-mail: martin.kormunda@ujep.cz [J.E. Purkinje University, Faculty of Science, Department of Physics, Ceske mladeze 8, 400 96 Usti nad Labem (Czech Republic); Fischer, Daniel; Hertwig, Andreas; Beck, Uwe [BAM Federal Institute for Materials Research and Testing, Division 6 4 Surface Technologies, Unter den Eichen 44-46, 12203 Berlin (Germany); Sebik, Matej; Pavlik, Jaroslav [J.E. Purkinje University, Faculty of Science, Department of Physics, Ceske mladeze 8, 400 96 Usti nad Labem (Czech Republic); Esser, Norbert [Leibniz-Institut für Analytische Wissenschaften — ISAS e.V., Department Berlin, Schwarzschildstr. 12, 12489 Berlin (Germany)

    2015-11-30

    Coatings deposited by magnetron co-sputtering from a single RF magnetron with a ceramic SnO{sub 2} target with iron inset in argon plasma were studied. The mass spectra of the process identified Sn{sup +} and SnO{sup +} species as the dominant species sputtered from the target, but no SnO{sub 2}{sup +} species were detected. The dominant positive ions in argon plasma are Ar{sup +} species. The only detected negative ions were O{sup −}. Sputtered neutral tin related species were not detected. Iron related species were also not detected because their concentration is below the detection limit. The concentration of iron dopant in the tin oxide coatings was controlled by the RF bias applied on the substrate holder while the discharge pressure also has some influence. The iron concentration was in the range from 0.9 at.% up to 19 at.% increasing with the substrate bias while the sheet resistivity decreases. The stoichiometry ratio of O/(Sn + Fe) in the coatings increased from 1.7 up to 2 in dependence on the substrate bias from floating bias (− 5 V) up to − 120 V of RF self-bias, respectively. The tin in the coatings was mainly bonded in Sn{sup 4+} state and iron was mainly in Fe{sup 2+} state when other tin bonding states were detected only in a small amounts. Iron bonding states in contrary to elemental compositions of the coatings were not influenced by the RF bias applied on the substrate. The coatings showed high transparency in the visible spectral range. However, an increased metallic behavior could be detected by using a higher RF bias for the deposition. The X-ray diffraction patterns and electron microscopy pictures made on the coatings confirmed the presence of an amorphous phase. - Highlights: • RF magnetron sputtering of SnO{sub 2} target with Fe inset in argon investigated by mass spectrometry • Optical properties of Fe doped SnO{sub x} coatings characterized • Analyses of overlapped XPS peaks at a spectrum from Fe doped SnO{sub x} coatings

  11. Miniaturized Air-Driven Planar Magnetic Generators

    Directory of Open Access Journals (Sweden)

    Jingjing Zhao

    2015-10-01

    Full Text Available This paper presents the design, analysis, fabrication and testing of two miniaturized air-driven planar magnetic generators. In order to reduce the magnetic resistance torque, Generator 1 establishes a static magnetic field by consisting a multilayer planar coil as the stator and two multi-pole permanent-magnet (PM rotors on both sides of the coil. To further decrease the starting torque and save more space, Generator 2 adopts the multilayer planar coil as the rotor and the multi-pole PMs as the stator, eliminating the casing without compromising the magnetic structure or output performance. The prototypes were tested gathering energy from wind which can work at a low wind speed of 1~2 m/s. Prototype of Generator 1 is with a volume of 2.61 cm3 and its normalized voltage reaches 485 mV/krpm. Prototype of Generator 2 has a volume of 0.92 cm3 and a normalized voltage as high as 538 mV/krpm. Additionally, output voltage can be estimated at better than 96% accuracy by the theoretical model developed in this paper. The two micro generators are capable of producing substantial electricity with little volume to serve as compact power conversion devices.

  12. Multi-sided metallization of textile fibres by using magnetron system with grounded cathode

    Directory of Open Access Journals (Sweden)

    Chodun Rafał

    2017-10-01

    Full Text Available The synthesis of coatings on textiles fibers enables functionalization of their properties e.g.: changing the reaction on IR radiation. In our experiment, a magnetron with a grounded cathode and positively biased anode was used as a source of plasma. A ring anode was positioned at 8 cm distance from the cathode. Samples of glass and cotton textile were placed at the plane of the anode. Ti and TiN coatings were deposited by sputtering of titanium target in Ar or Ar+ N2 atmosphere. SEM studies showed that, using the magnetron system described above, the textile fibers were covered by the 2 μm to 3 μm thick coatings. Unexpectedly, the coatings were deposited at both sides of the samples: the front side was exposed to glow discharge plasma and the backside was completely shaded from the plasma. IR optical investigation exhibited significant change in reflectance and transmittance of the coated textiles. The using of standard magnetron system (grounded anode and cathode at negative potential resulted in a coating deposition at the textile side exposed to the plasma action only. We believe that the multi-sided deposition of coatings observed during the process run with magnetron with grounded cathode is a result of an ambipolar diffusion mechanism in the anodic potential drop region.

  13. Comparison Of Planar And Wound Transformers For Flyback Forward And Half-Bridge Space Power Converters

    Science.gov (United States)

    Bjorklund, Thomas; Andreasen, John; Brosen, Finn; Matthiesen, Erik; Poulsen, Ole

    2011-10-01

    Planar technology has now entered the space domain. The big advantages of planar technology are; - Low profile - Excellent repeatability - Economical assembly - Mechanical integrity - Superior thermal characteristics This is why the general power industries increasingly are using planar magnetics in more and more applications, and therefore also why we see a rising demand for the usability of the planar technology among space application developers. The differences between wound and planar transformers have been mapped with a detailed look on the various parasitic component values, such as DC- and AC- resistance, Leakage Inductance and stray capacitance, and revealed the magnitude of the advantages of planar technology. This technical solution is proven in prototypes that have been built in different combination of PCB's and copper foil, with more or less interleaving of windings. Furthermore the transformers have been designed with several outputs stacked together with a fairly high number of primary turns, in order to have planar transformers similar to the wound types that are generally used for space applications.

  14. The structural properties of CdS deposited by chemical bath deposition and pulsed direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Lisco, F., E-mail: F.Lisco@lboro.ac.uk [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire, LE11 3TU (United Kingdom); Kaminski, P.M.; Abbas, A.; Bass, K.; Bowers, J.W.; Claudio, G. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire, LE11 3TU (United Kingdom); Losurdo, M. [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, via Orabona 4, 70126 Bari (Italy); Walls, J.M. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire, LE11 3TU (United Kingdom)

    2015-05-01

    Cadmium sulphide (CdS) thin films were deposited by two different processes, chemical bath deposition (CBD), and pulsed DC magnetron sputtering (PDCMS) on fluorine doped-tin oxide coated glass to assess the potential advantages of the pulsed DC magnetron sputtering process. The structural, optical and morphological properties of films obtained by CBD and PDCMS were investigated using X-ray photoelectron spectroscopy, X-ray diffraction, scanning and transmission electron microscopy, spectroscopic ellipsometry and UV-Vis spectrophotometry. The as-grown films were studied and comparisons were drawn between their morphology, uniformity, crystallinity, and the deposition rate of the process. The highest crystallinity is observed for sputtered CdS thin films. The absorption in the visible wavelength increased for PDCMS CdS thin films, due to the higher density of the films. The band gap measured for the as-grown CBD-CdS is 2.38 eV compared to 2.34 eV for PDCMS-CdS, confirming the higher density of the sputtered thin film. The higher deposition rate for PDCMS is a significant advantage of this technique which has potential use for high rate and low cost manufacturing. - Highlights: • Pulsed DC magnetron sputtering (PDCMS) of CdS films • Chemical bath deposition of CdS films • Comparison between CdS thin films deposited by chemical bath and PDCMS techniques • High deposition rate deposition for PDCMS deposition • Uniform, pinhole free CdS thin films.

  15. The structural properties of CdS deposited by chemical bath deposition and pulsed direct current magnetron sputtering

    International Nuclear Information System (INIS)

    Lisco, F.; Kaminski, P.M.; Abbas, A.; Bass, K.; Bowers, J.W.; Claudio, G.; Losurdo, M.; Walls, J.M.

    2015-01-01

    Cadmium sulphide (CdS) thin films were deposited by two different processes, chemical bath deposition (CBD), and pulsed DC magnetron sputtering (PDCMS) on fluorine doped-tin oxide coated glass to assess the potential advantages of the pulsed DC magnetron sputtering process. The structural, optical and morphological properties of films obtained by CBD and PDCMS were investigated using X-ray photoelectron spectroscopy, X-ray diffraction, scanning and transmission electron microscopy, spectroscopic ellipsometry and UV-Vis spectrophotometry. The as-grown films were studied and comparisons were drawn between their morphology, uniformity, crystallinity, and the deposition rate of the process. The highest crystallinity is observed for sputtered CdS thin films. The absorption in the visible wavelength increased for PDCMS CdS thin films, due to the higher density of the films. The band gap measured for the as-grown CBD-CdS is 2.38 eV compared to 2.34 eV for PDCMS-CdS, confirming the higher density of the sputtered thin film. The higher deposition rate for PDCMS is a significant advantage of this technique which has potential use for high rate and low cost manufacturing. - Highlights: • Pulsed DC magnetron sputtering (PDCMS) of CdS films • Chemical bath deposition of CdS films • Comparison between CdS thin films deposited by chemical bath and PDCMS techniques • High deposition rate deposition for PDCMS deposition • Uniform, pinhole free CdS thin films

  16. Magnesium based composites fabricated by low pressure infiltration

    International Nuclear Information System (INIS)

    Johansson, P.; Micski, A.; Savage, S.J.

    1993-01-01

    Magnesiumbased fiber composites have been produced by so called low pressure infiltration. The initial material consist of 'saffil' pre-forms and two magnesium alloys, Mg-9Al-1Zn and WE 54 (approximate composition Mg-5Y-1.5Nd-2(Tb,Er,Dy,Gd)-0.5Zr), and pure magnesium. The preforms consists of 10-30 vol% of short fibers linked together by SiO 2 or Al 2 O 3 . Three different routes have been tested in the search for a good low pressure infiltration method. The experiments cover corrosion testing in NaCl-solution, sliding wear, abrasion and erosion testing. Of the tested infiltration methods the best results were obtained in a resistance heated evacuable furnace, in which the metal was molted in a steel crucible and the preform was conveyed into the melt under protective atmosphere. The infiltration takes place at atmospheric pressure and the cooling is performed in a sealed tube in air. The microscopy studies shows that low pressure infiltrated composites contain considerable amounts of porosity in distinction from those fabricated by squeeze casting. The corrosion test has shown that in the tested environment the alloy WE 54 has good corrosion resistance while Mg-9Al-1Zn and pure magnesium show low corrosion resistance. The influence of fibres in the matrix seems to be very small. Both magnesium and the alloy Mg-9Al-1Zn show for two body abrasion an almost linear improvement of abrasion resistance with increased fiber content. Pure magnesium shows decreasing erosion resistance with increasing fibre content. The Mg-9Al-1Zn-alloy appears to show a maximum in erosion resistance at 10 vol% fibers. In sliding wear the materials show an optimum initial and steady state wear resistance at a fiber content of about 10%. In general Al 2 O 3 -binder gives better wear resistance than SiO 2 -binder. Tensile testing was performed on low pressure infiltrated and squeeze cast composites with WE 54 matrix. It shows that the low pressure infiltrated composites are inferior to those

  17. High rate deposition of thin film cadmium sulphide by pulsed direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Lisco, F., E-mail: F.Lisco@lboro.ac.uk [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom); Kaminski, P.M.; Abbas, A.; Bowers, J.W.; Claudio, G. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom); Losurdo, M. [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, via Orabona 4, 70126 Bari (Italy); Walls, J.M. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom)

    2015-01-01

    Cadmium Sulphide (CdS) is an important n-type semiconductor widely used as a window layer in thin film photovoltaics Copper Indium Selenide, Copper Indium Gallium (di)Selenide, Copper Zinc Tin Sulphide and Cadmium Telluride (CdTe). Cadmium Sulphide has been deposited using a number of techniques but these techniques can be slow (chemical bath deposition and Radio Frequency sputtering) or the uniformity and the control of thickness can be relatively difficult (close space sublimation). In this paper we report on the development of a process using pulsed Direct Current magnetron sputtering which allows nanometre control of thin film thickness using time only. The CdS thin films deposited in this process are highly uniform and smooth. They exhibit the preferred hexagonal structure at room temperature deposition and they have excellent optical properties. Importantly, the process is highly stable despite the use of a semi-insulating magnetron target. Moreover, the process is very fast. The deposition rate using 1.5 kW of power to a 6-inch circular magnetron was measured to be greater than 8 nm/s. This makes the process suitable for industrial deployment. - Highlights: • Pulsed DC magnetron sputtering of CdS • High deposition rate deposition • Uniform, pinhole free films.

  18. High rate deposition of thin film cadmium sulphide by pulsed direct current magnetron sputtering

    International Nuclear Information System (INIS)

    Lisco, F.; Kaminski, P.M.; Abbas, A.; Bowers, J.W.; Claudio, G.; Losurdo, M.; Walls, J.M.

    2015-01-01

    Cadmium Sulphide (CdS) is an important n-type semiconductor widely used as a window layer in thin film photovoltaics Copper Indium Selenide, Copper Indium Gallium (di)Selenide, Copper Zinc Tin Sulphide and Cadmium Telluride (CdTe). Cadmium Sulphide has been deposited using a number of techniques but these techniques can be slow (chemical bath deposition and Radio Frequency sputtering) or the uniformity and the control of thickness can be relatively difficult (close space sublimation). In this paper we report on the development of a process using pulsed Direct Current magnetron sputtering which allows nanometre control of thin film thickness using time only. The CdS thin films deposited in this process are highly uniform and smooth. They exhibit the preferred hexagonal structure at room temperature deposition and they have excellent optical properties. Importantly, the process is highly stable despite the use of a semi-insulating magnetron target. Moreover, the process is very fast. The deposition rate using 1.5 kW of power to a 6-inch circular magnetron was measured to be greater than 8 nm/s. This makes the process suitable for industrial deployment. - Highlights: • Pulsed DC magnetron sputtering of CdS • High deposition rate deposition • Uniform, pinhole free films

  19. Oxygen partial pressure effects on the magnetron sputtered WO3 films

    International Nuclear Information System (INIS)

    Muğlu, G Merhan; Gür, E

    2016-01-01

    Electrochromism is changing color of a substance in response to the applied an external electric field and the phenomenon is reversible. WO 3 is very attractive material due to its electrochromic properties as well as it is also attractive for many different applications such as gas sensors, phosphorous screen, textile, glass industry. In this study, it is aimed to provide optimization of the optical and structural characteristics of WO 3 by changing the growth parameters mainly the oxygen partial pressure. The partial pressure of oxygen was changed with increments of 0.7 mTorr. For the analysis, X-ray Diffraction (XRD), absorption, Raman spectroscopy measurements were used. When O 2 gas increased, peaks belong to the WO 3 was observed in XRD patterns at the 2 theta angles of 23.0, 11.0, 23.5 and 28.5 angles corresponding to the (002), (020) and (220) planes, respectively. This shows that there is a significant effect of increasing O 2 partial pressure in the formation of WO 3 films. The bandgap energy of the WO 3 thin films are found to be around 3.0 eV. Raman measurements showed vibrational modes of W-O-W stretching and bending modes which shows small shifts depending on the partial pressures of the O 2 . Obtained results indicated that better crystal structure is obtained with higher O 2 gas partial pressure. (paper)

  20. Investigation of Rising-Sun Magnetrons Operated at Relativistic Voltages Using Three Dimensional Particle-in-Cell Simulation

    International Nuclear Information System (INIS)

    Lemke, R.W.; Genoni, T.C.; Spencer, T.A.

    1999-01-01

    This work is an attempt to elucidate effects that may limit efficiency in magnetrons operated at relativistic voltages (V ∼ 500 kV). Three-dimensional particle-in-cell simulation is used to investigate the behavior of 14 and 22 cavity, cylindrical, rising-sun magnetrons. Power is extracted radially through a single iris located at the end of every other cavity. Numerical results show that in general output power and efficiency increase approximately linearly with increasing iris width (decreasing vacuum Q) until the total Q becomes too low for stable oscillation in the n-mode to be maintained. Beyond this point mode competition and/or switching occur and efficiency decreases. Results reveal that the minimum value of Q (maximum efficiency) that can be achieved prior to the onset of mode competition is significantly affected by the magnitude of the 0-space-harmonic of the π-mode, a unique characteristic of rising-suns, and by the magnitude of the electron current density (space-charge effects). By minimizing these effects, up to 3.7 GW output power has been produced at an efficiency of 40%

  1. Highly -oriented growth of polycrystalline silicon films on glass by pulsed magnetron sputtering

    International Nuclear Information System (INIS)

    Reinig, P.; Selle, B.; Fenske, F.; Fuhs, W.; Alex, V.; Birkholz, M.

    2002-01-01

    Nominally undoped polycrystalline silicon (poly-Si) thin films were deposited on glass at 450 deg. C at high deposition rate (>100 nm/min) by pulsed dc magnetron sputtering. The pulse frequency was found to have a significant influence on the preferred grain orientation. The x-ray diffraction pattern exhibits a strong enhancement of the (400) reflex with increasing pulse frequency. The quantitative evaluation reveals that over 90% of the grains are oriented. The observed change in preferred grain orientation in poly-Si films at low temperatures is associated with concurrent ion bombardment of the growing film

  2. Study of the low pressure (Black Phase) SmS properties

    International Nuclear Information System (INIS)

    Bordier, G.

    1987-03-01

    SmS has been studied for its transition from the low pressure black phase to the high pressure intermediate valence phase; but the black phase properties seem to be very rich. The variations which pressure of the low-temperature electronic transport properties show the existence of a semi-metallic phase within the black phase domain in a pressure-temperature diagram, for a pressure above 4 kbar, which corresponds to the so-called B'phase. We study the insulating low pressure phase with a model involving acceptor like states. Using electronic paramagnetic resonance experiments we observe a square symmetry trivalent samarium ion neighbour of a sulfure defect, and magnetically coupled with the lattice. This defect exists in two nearly symmetric configurations and the resonance line broadens with temperature in an actived way. It gives rise to metastable effects yielding conductivity relaxations, analysed with stretched exponential laws, because the defect traps magnetically conduction electrons forming a bound magnetic polaron. The relaxation time at zero field is temperature actived. We develop a phenomenological model that gives the good orders of magnitude for the trapping barrier and for the critical field corresponding to the maximum of the low temperature magnetoresistance [fr

  3. Non-planar ABJ theory and parity

    International Nuclear Information System (INIS)

    Caputa, Pawel; Kristjansen, Charlotte; Zoubos, Konstantinos

    2009-01-01

    While the ABJ Chern-Simons-matter theory and its string theory dual manifestly lack parity invariance, no sign of parity violation has so far been observed on the weak coupling spin chain side. In particular, the planar two-loop dilatation generator of ABJ theory is parity invariant. In this Letter we derive the non-planar part of the two-loop dilatation generator of ABJ theory in its SU(2)xSU(2) sub-sector. Applying the dilatation generator to short operators, we explicitly demonstrate that, for operators carrying excitations on both spin chains, the non-planar part breaks parity invariance. For operators with only one type of excitation, however, parity remains conserved at the non-planar level. We furthermore observe that, as for ABJM theory, the degeneracy between planar parity pairs is lifted when non-planar corrections are taken into account.

  4. Non-planar ABJ Theory and Parity

    DEFF Research Database (Denmark)

    Caputa, Pawel; Kristjansen, Charlotte; Zoubos, Konstantinos

    2009-01-01

    we derive the non-planar part of the two-loop dilatation generator of ABJ theory in its SU(2)xSU(2) sub-sector. Applying the dilatation generator to short operators, we explicitly demonstrate that, for operators carrying excitations on both spin chains, the non-planar part breaks parity invariance......While the ABJ Chern-Simons-matter theory and its string theory dual manifestly lack parity invariance, no sign of parity violation has so far been observed on the weak coupling spin chain side. In particular, the planar two-loop dilatation generator of ABJ theory is parity invariant. In this letter....... For operators with only one type of excitation, however, parity remains conserved at the non-planar level. We furthermore observe that, as for ABJM theory, the degeneracy between planar parity pairs is lifted when non-planar corrections are taken into account....

  5. Paving the Way Towards Reactive Planar Spanner Construction in Wireless Networks

    Science.gov (United States)

    Frey, Hannes; Rührup, Stefan

    A spanner is a subgraph of a given graph that supports the original graph's shortest path lengths up to a constant factor. Planar spanners and their distributed construction are of particular interest for geographic routing, which is an efficient localized routing scheme for wireless ad hoc and sensor networks. Planarity of the network graph is a key criterion for guaranteed delivery, while the spanner property supports efficiency in terms of path length. We consider the problem of reactive local spanner construction, where a node's local topology is determined on demand. Known message-efficient reactive planarization algorithms do not preserve the spanner property, while reactive spanner constructions with a low message overhead have not been described so far. We introduce the concept of direct planarization which may be an enabler of efficient reactive spanner construction. Given an edge, nodes check for all incident intersecting edges a certain geometric criterion and withdraw the edge if this criterion is not satisfied. We use this concept to derive a generic reactive topology control mechanism and consider two geometric criteria. Simulation results show that direct planarization increases the performance of localized geographic routing by providing shorter paths than existing reactive approaches.

  6. Synthesis and morphology of iron-iron oxide core-shell nanoparticles produced by high pressure gas condensation

    NARCIS (Netherlands)

    Xing, Lijuan; ten Brink, Gert H.; Chen, Bin; Schmidt, Franz P.; Haberfehlner, Georg; Hofer, Ferdinand; Kooi, Bart J.; Palasantzas, Georgios

    2016-01-01

    Core-shell structured Fe nanoparticles (NPs) produced by high pressure magnetron sputtering gas condensation were studied using transmission electron microscopy (TEM) techniques, electron diffraction, electron energy-loss spectroscopy (EELS), tomographic reconstruction, and Wulff shape construction

  7. Development of a Magnetron Resonance Frequency Auto Tuning System for Medical Xband [9300 MHz] RF Linear Accelerator

    Energy Technology Data Exchange (ETDEWEB)

    Cha, Sung Su; Lee, Byung Cheol [University of Science and Technology, Daejeon (Korea, Republic of); Kim, Yujong; Park, Hyung Dal; Lee, Byeong-No; Joo, Youngwoo; Cha, Hyungki; Lee, Soo Min; Song, Ki Baek [KAERI, Daejeon (Korea, Republic of); Lee, Seung Hyun [Sungkyunkwan University, Suwon (Korea, Republic of)

    2015-05-15

    The total components of the accelerator are the magnetron, electron gun, accelerating structure, a set of solenoid magnets, four sets of steering coils, a modulator, and a circulator. One of the accelerator components of the accelerating structure is made of oxygen-free high-conductivity copper (OFHC), and its volume is changed according to the ambient temperature. As the volume changes, the resonant frequency of the accelerating structure is changed. Accordingly, the resonance frequency is mismatched between the source of the magnetron and the accelerating structure. An automatic frequency tuning system is automatically matched with the resonant frequency of the magnetron and accelerating structure, which allows a high output power and reliable accelerator operation. An automatic frequency tuning system is composed of a step motor control part for correcting the frequency of the source and power measuring parts, i.e., the forward and reflected power between the magnetron and accelerating structure. In this paper, the design, fabrication, and RF power test of the automatic frequency tuning system for the X-band linac are presented. A frequency tuning system was developed to overcome an unstable accelerator operation owing to the frequency mismatch between the magnetron and accelerating structure. The frequency measurement accuracy is 100 kHz and 0.72 degree per pulse.

  8. Experimental studies of thin films deposition by magnetron sputtering method for CIGS solar cell fabrication

    Directory of Open Access Journals (Sweden)

    Gułkowski Sławomir

    2017-01-01

    Full Text Available Among a variety of the thin film solar cell technologies of second generation, copper-indium-gallium-diselenide device (CIGS with the latest highest lab cell efficiency record of 22.4 % seems to be the most promising for the power generation. This is partly due to the advantages of using low cost films of few microns thick not only as a metallic contacts but also as a main structure of the solar cell consisted of high quality semiconductor layers. This paper reports the experimental studies of the CIGS absorber formation on Soda Lime Glass substrate covered by thin molybdenum film as a back contact layer. All structures were deposited with the use of magnetron sputtering method only. Technological parameters of the deposition process such as deposition power, pressure and deposition time were optimized for each layer of the structure. Mo back contact was examined in terms of resistivity. EDS measurements were carried out to verify stoichiometric composition of CIGS absorber. Thin film of Al was used as a top contact in order to examine the quality of p-n junction. The I-V electrical characteristic of the p-n junction was analysed in terms of solar cell application.

  9. Microstructural evaluation of NiTi-based films deposited by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Crăciunescu, Corneliu M., E-mail: corneliu.craciunescu@upt.ro; Mitelea, Ion, E-mail: corneliu.craciunescu@upt.ro; Budău, Victor, E-mail: corneliu.craciunescu@upt.ro [Department of Materials and Manufacturing Engineering, Politehnica University of Timisoara (Romania); Ercuţa, Aurel [Department of Materials and Manufacturing Engineering, Politehnica University of Timisoara and Department of Physics, West University Timisoara (Romania)

    2014-11-24

    Shape memory alloy films belonging to the NiTi-based systems were deposited on heated and unheated substrates, by magnetron sputtering in a custom made system, and their structure and composition was analyzed using electron microscopy. Several substrates were used for the depositions: glass, Cu-Zn-Al, Cu-Al-Ni and Ti-NiCu shape memory alloy ribbons and kapton. The composition of the Ti-Ni-Cu films showed limited differences, compared to the one of the target and the microstructure for the DC magnetron sputtering revealed crystallized structure with features determined on peel off samples from a Si wafer. Both inter and transcrystalline fractures were observed and related to the interfacial stress developed on cooling from deposition temperature.

  10. Properties of H- and D- beams from magnetron and Penning sources

    International Nuclear Information System (INIS)

    Sluyters, T.; Kovarik, V.

    1979-01-01

    The quality of negative hydrogen isotope beams are evaluated after extraction from magnetron and Penning sources. The general conclusions of these measurements are that: (a) the beam quality from these plasma sources are adequate for the transport of high current negative ion beams in bending magnets; (b) there is evidence of practically complete space charge neutralization in the drift space beyond the extractor; (c) the beam performance from the Penning source appears to be better compared with the magnetron source; and (d) it is likely that the high electric field gradient and a concave ion emission boundary are responsible for a beam cross-over near the anode aperture, which causes beam divergence practically independent of the extraction geometry

  11. The importance of an external circuit in a particle-in-cell/Monte Carlo collisions model for a direct current planar magnetron

    International Nuclear Information System (INIS)

    Bultinck, E.; Kolev, I.; Bogaerts, A.; Depla, D.

    2008-01-01

    In modeling direct current (dc) discharges, such as dc magnetrons, a current-limiting device is often neglected. In this study, it is shown that an external circuit consisting of a voltage source and a resistor is inevitable in calculating the correct cathode current. Avoiding the external circuit can cause the current to converge (if at all) to a wrong volt-ampere regime. The importance of this external circuit is studied by comparing the results with those of a model without current-limiting device. For this purpose, a 2d3v particle-in-cell/Monte Carlo collisions model was applied to calculate discharge characteristics, such as cathode potential and current, particle fluxes and densities, and potential distribution in the plasma. It is shown that the calculated cathode current is several orders of magnitude lower when an external circuit is omitted, leading to lower charged particle fluxes and densities, and a wider plasma sheath. Also, it was shown, that only simulations with external circuit can bring the cathode current into a certain plasma regime, which has its own typical properties. In this work, the normal and abnormal regimes were studied

  12. Pressurized Operation of a Planar Solid Oxide Cell Stack

    DEFF Research Database (Denmark)

    Jensen, Søren Højgaard; Sun, Xiufu; Ebbesen, Sune Dalgaard

    2016-01-01

    , pressurized SOEC based electrolyzers can become more efficient both energy- and cost-wise than PEM and Alkaline systems. Pressurization of SOFCs can significantly increase the cell power density and reduce the size of auxiliary components. In the present study, a SOC stack was successfully operated......Solid oxide cells (SOCs) can be operated either as fuel cells (SOFC) to convert fuels to electricity or as electrolyzers (SOEC) to convert electricity to fuels such as hydrogen or methane. Pressurized operation of SOCs provide several benefits on both cell and system level. If successfully matured...

  13. Synthesis and characterization of DC magnetron sputtered nano structured molybdenum thin films

    Energy Technology Data Exchange (ETDEWEB)

    Rondiya, S. R.; Rokade, A. V.; Jadhavar, A. A.; Pandharkar, S. M.; Kulkarni, R. R.; Karpe, S. D.; Diwate, K. D. [School of Energy Studies, Savitribai Phule Pune University, Pune 411007 (India); Jadkar, S. R., E-mail: sandesh@physics.unipune.ac.in [Department of Physics, Savitribai Phule Pune University, Pune 411007 (India)

    2016-04-13

    Molybdenum (Mo) thin films were deposited on corning glass (#7059) substrates using DC magnetron sputtering system. The effect of substrate temperature on the structural, morphology and topological properties have been investigated. Films were characterized by variety of techniques such as low angle x-ray diffraction (low angle XRD), field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM). The low angle XRD analysis revealed that the synthesized Mo films are nanocrystalline having cubic crystal structure with (110) preferential orientation. The microstructure of the deposited Mo thin films observed with FE-SEM images indicated that films are homogeneous and uniform with randomly oriented leaf shape morphology. The AFM analysis shows that with increase in substrate temperature the rms roughness of Mo films increases. The obtained results suggest that the synthesized nanostructured Mo thin films have potential application as a back contact material for high efficiency solar cells like CdTe, CIGS, CZTS etc.

  14. Kinetic theory of the positive column of a low-pressure discharge in a transverse magnetic field

    International Nuclear Information System (INIS)

    Londer, Ya. I.; Ul’yanov, K. N.

    2011-01-01

    The influence of a transverse magnetic field on the characteristics of the positive column of a planar low-pressure discharge is studied theoretically. The motion of magnetized electrons is described in the framework of a continuous-medium model, while the ion motion in the ambipolar electric field is described by means of a kinetic equation. Using mathematical transformations, the problem is reduced to a secondorder ordinary differential equation, from which the spatial distribution of the potential is found in an analytic form. The spatial distributions of the plasma density, mean plasma velocity, and electric potential are calculated, the ion velocity distribution function at the plasma boundary is found, and the electron energy as a function of the magnetic field is determined. It is shown that, as the magnetic field rises, the electron energy increases, the distributions of the plasma density and mean plasma velocity become asymmetric, the maximum of the plasma density is displaced in the direction of the Ampère force, and the ion flux in this direction becomes substantially larger than the counter-directed ion flux.

  15. Controlled formation of anatase and rutile TiO2 thin films by reactive magnetron sputtering

    OpenAIRE

    Rafieian, Damon; Ogieglo, Wojciech; Savenije, T.J.; Lammertink, Rob G H

    2015-01-01

    We discuss the formation of TiO2 thin films via DC reactive magnetron sputtering. The oxygen concentration during sputtering proved to be a crucial parameter with respect to the final film structure and properties. The initial deposition provided amorphous films that crystallise upon annealing to anatase or rutile, depending on the initial sputtering conditions. Substoichiometric films (TiOx), obtained by sputtering at relatively low oxygen concentration, formed rutile upon annealing in air, ...

  16. CT study in primary low spinal fluid pressure syndrome

    Energy Technology Data Exchange (ETDEWEB)

    Hoshino, Moritoshi; Okayama, Kenji; Kubo, Hiromasa; Watanabe, Hiromi; Endou, Riuko (Ohmiya Red Cross Hospital, Yono, Saitama (Japan))

    1991-02-01

    CT findings in primary low spinal fluid pressure syndrome were studied on the basis of 3 cases. Case 1 was a 43-year-old male with a complicated bilateral isodense subdural hematoma (SDH). Case 2 was a 45-year-old female with a complicated bilateral high dense SDH. Case 3 was a 36-year-old female discharged without any complications after spinal fluid pressure normalized. Slight downward displacement of the brain under low spinal fluid pressure was shown as the narrowing of a Sylvian fissures and infratentorial cisterns on CT. On the other hand, in this syndrome with a complicated bilateral isodense SDH, in addition to this finding, CT revealed distortion and narrowing of body lateral ventricles, which might be differential findings from this syndrome without complicated SDH. Under low spinal fluid pressure, bridging veins are more stretched by a downward displacement of the brain. And consequently they were easily injured and SDH was developed. (author).

  17. Low cost sonoluminescence experiment in pressurized water

    Energy Technology Data Exchange (ETDEWEB)

    Bernal, L; Insabella, M [LADOP, University of Mar del Plata (Argentina); Bilbao, L [INFIP, University of Buenos Aires and CONICET (Argentina)

    2012-06-19

    We present a low cost design for demostration and mesurements of light emission from a sonoluminescence experiment. Using pressurized water introduced in an acrylic cylinder and one piezoelectric from an ultrasonic cleaner, we are able to generate cavitacion zones with emission of light. The use of argon to pressurize the water improves the emission an the light can be seen at naked eye in a softlit ambient.

  18. Low cost sonoluminescence experiment in pressurized water

    International Nuclear Information System (INIS)

    Bernal, L; Insabella, M; Bilbao, L

    2012-01-01

    We present a low cost design for demostration and mesurements of light emission from a sonoluminescence experiment. Using pressurized water introduced in an acrylic cylinder and one piezoelectric from an ultrasonic cleaner, we are able to generate cavitacion zones with emission of light. The use of argon to pressurize the water improves the emission an the light can be seen at naked eye in a softlit ambient.

  19. CFD simulation of subcooled flow boiling at low pressure

    International Nuclear Information System (INIS)

    Koncar, B.; Mavko, B.

    2001-01-01

    An increased interest to numerically simulate the subcooled flow boiling at low pressures (1 to 10 bar) has been aroused in recent years, pursued by the need to perform safety analyses of research nuclear reactors and to investigate the sump cooling concept for future light water reactors. In this paper the subcooled flow boiling has been simulated with a multidimensional two-fluid model used in a CFX-4.3 computational fluid dynamics (CFD) code. The existing model was adequately modified for low pressure conditions. It was shown that interfacial forces, which are usually used for adiabatic flows, need to be modeled to simulate subcooled boiling at low pressure conditions. Simulation results are compared against published experimental data [1] and agree well with experiments.(author)

  20. Influence of Substrate Temperature on Structural, Electrical and Optical Properties of Ito Thin Films Prepared by RF Magnetron Sputtering

    Science.gov (United States)

    He, Bo; Zhao, Lei; Xu, Jing; Xing, Huaizhong; Xue, Shaolin; Jiang, Meng

    2013-10-01

    In this paper, we investigated indium-tin-oxide (ITO) thin films on glass substrates deposited by RF magnetron sputtering using ceramic target to find the optimal condition for fabricating optoelectronic devices. The structural, electrical and optical properties of the ITO films prepared at various substrate temperatures were investigated. The results indicate the grain size increases with substrate temperature increases. As the substrate temperature grew up, the resistivity of ITO films greatly decreased. The ITO film possesses high quality in terms of electrode functions, when substrate temperature is 480°C. The resistivity is as low as 9.42 × 10-5 Ω•cm, while the carrier concentration and mobility are as high as 3.461 × 1021 atom/cm3 and 19.1 cm2/Vṡs, respectively. The average transmittance of the film is about 95% in the visible region. The novel ITO/np-Silicon frame, which prepared by RF magnetron sputtering at 480°C substrate temperature, can be used not only for low-cost solar cell, but also for high quantum efficiency of UV and visible lights enhanced photodetector for various applications.

  1. High pressure neutron and X-ray diffraction at low temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Ridley, Christopher J.; Kamenev, Konstantin V. [Edinburgh Univ. (United Kingdom). School of Engineering and the Centre for Science at Extreme Conditions

    2014-04-01

    This paper presents a review of techniques and considerations in the design and construction of high pressure, low temperature diffraction experiments. Also intended as an introductory text to new high pressure users, the crucial aspects of pressure cell design are covered. The general classification of common designs, and a discussion into the key beam interaction, mechanical, and thermal properties of commonly used materials is given. The advantages of different materials and high pressure cell classifications are discussed, and examples of designs developed for low temperature diffraction studies are presented, and compared. (orig.)

  2. High pressure neutron and X-ray diffraction at low temperatures

    International Nuclear Information System (INIS)

    Ridley, Christopher J.; Kamenev, Konstantin V.

    2014-01-01

    This paper presents a review of techniques and considerations in the design and construction of high pressure, low temperature diffraction experiments. Also intended as an introductory text to new high pressure users, the crucial aspects of pressure cell design are covered. The general classification of common designs, and a discussion into the key beam interaction, mechanical, and thermal properties of commonly used materials is given. The advantages of different materials and high pressure cell classifications are discussed, and examples of designs developed for low temperature diffraction studies are presented, and compared. (orig.)

  3. Fabrications and Performance of Wireless LC Pressure Sensors through LTCC Technology.

    Science.gov (United States)

    Lin, Lin; Ma, Mingsheng; Zhang, Faqiang; Liu, Feng; Liu, Zhifu; Li, Yongxiang

    2018-01-25

    This paper presents a kind of passive wireless pressure sensor comprised of a planar spiral inductor and a cavity parallel plate capacitor fabricated through low-temperature co-fired ceramic (LTCC) technology. The LTCC material with a low Young's modulus of ~65 GPa prepared by our laboratory was used to obtain high sensitivity. A three-step lamination process was applied to construct a high quality cavity structure without using any sacrificial materials. The effects of the thickness of the sensing membranes on the sensitivity and detection range of the pressure sensors were investigated. The sensor with a 148 μm sensing membrane showed the highest sensitivity of 3.76 kHz/kPa, and the sensor with a 432 μm sensing membrane presented a high detection limit of 2660 kPa. The tunable sensitivity and detection limit of the wireless pressure sensors can meet the requirements of different scenes.

  4. Setup for in situ X-ray diffraction studies of thin film growth by magnetron sputtering

    CERN Document Server

    Ellmer, K; Weiss, V; Rossner, H

    2001-01-01

    A novel method is described for the in situ-investigation of nucleation and growth of thin films during magnetron sputtering. Energy dispersive X-ray diffraction with synchrotron light is used for the structural analysis during film growth. An in situ-magnetron sputtering chamber was constructed and installed at a synchrotron radiation beam line with a bending magnet. The white synchrotron light (1-70 keV) passes the sputtering chamber through Kapton windows and hits one of the substrates on a four-fold sample holder. The diffracted beam, observed under a fixed diffraction angle between 3 deg. and 10 deg., is energy analyzed by a high purity Ge-detector. The in situ-EDXRD setup is demonstrated for the growth of tin-doped indium oxide (ITO) films prepared by reactive magnetron sputtering from a metallic target.

  5. Structure and morphology of magnetron sputter deposited ultrathin ZnO films on confined polymeric template

    Science.gov (United States)

    Singh, Ajaib; Schipmann, Susanne; Mathur, Aakash; Pal, Dipayan; Sengupta, Amartya; Klemradt, Uwe; Chattopadhyay, Sudeshna

    2017-08-01

    The structure and morphology of ultra-thin zinc oxide (ZnO) films with different film thicknesses on confined polymer template were studied through X-ray reflectivity (XRR) and grazing incidence small angle X-ray scattering (GISAXS). Using magnetron sputter deposition technique ZnO thin films with different film thicknesses (weight of polystyrene). The detailed internal structure, along the surface/interfaces and the growth direction of the system were explored in this study, which provides insight into the growth procedure of ZnO on confined polymer and reveals that a thin layer of ZnO, with very low surface and interface roughness, can be grown by DC magnetron sputtering technique, with approximately full coverage (with bulk like electron density) even in nm order of thickness, in 2-7 nm range on confined polymer template, without disturbing the structure of the underneath template. The resulting ZnO-polystyrene hybrid systems show strong ZnO near band edge (NBE) and deep-level (DLE) emissions in their room temperature photoluminescence spectra, where the contribution of DLE gets relatively stronger with decreasing ZnO film thickness, indicating a significant enhancement of surface defects because of the greater surface to volume ratio in thinner films.

  6. Study of silicon-silicon nitride interface properties on planar (1 0 0), planar (1 1 1) and textured surfaces using deep-level transient spectroscopy

    International Nuclear Information System (INIS)

    Gong, Chun; Simoen, Eddy; Posthuma, Niels E; Van Kerschaver, Emmanuel; Poortmans, Jef; Mertens, Robert

    2010-01-01

    Deep-level transient spectroscopy (DLTS) has been applied to metal-insulator-semiconductor (MIS) capacitors fabricated on planar (1 0 0), planar (1 1 1) orientations and textured n-type silicon wafers. Low frequency direct plasma-enhanced chemical vapour deposition Si-SiN x interface properties with and without plasma NH 3 pre-treatment, with and without rapid thermal annealing (RTA) have been investigated. It is shown that three different kinds of defect states are identified at the Si-SiN x interface. For the planar (1 0 0) surface, samples with plasma NH 3 pre-treatment plus RTA show the lowest DLTS signals, which suggests the lowest overall interface states density. For planar (1 1 1) Si surfaces, plasma NH 3 pre-treatment and RTA yield a small improvement. With the textured surface, the RTA step improves the surface passivation quality further but no obvious impact is found with plasma NH 3 pre-treatment. Energy-dependent electron capture cross sections were also measured by small-pulse DLTS. The capture cross sections depend strongly on the energy level and decrease towards the conduction band edge.

  7. Superhydrophobic photocatalytic PTFE – Titania coatings deposited by reactive pDC magnetron sputtering from a blended powder target

    Energy Technology Data Exchange (ETDEWEB)

    Ratova, Marina, E-mail: marina_ratova@hotmail.com; Kelly, Peter J.; West, Glen T.

    2017-04-01

    The production of photocatalytic coatings with superhydrophobic properties, as opposed to the conventional hydrophilic properties, is desirable for the prevention of adhesion of contaminants to photocatalytic surfaces with subsequent deterioration of photocatalytic properties. In this work polytetrafluoroethylene (PTFE) – TiO{sub 2} composite thin films were deposited using a novel method of reactive pulsed direct current (pDC) magnetron sputtering of a blended PTFE – titanium oxide powder target. The surface characteristics and photocatalytic properties of the deposited composite coatings were studied. The as-deposited coatings were annealed at 523 K in air and analysed with Raman spectroscopy, optical profilometry and scanning electron microscopy. Hydrophobicity was assessed though measurements of water contact angles, and photocatalytic properties were studied via methylene blue dye degradation under UV irradiation. It was found that variations of gas flow and, hence, process pressures allowed deposition of samples combining superhydrophobicity with stable photocatalytic efficiency under UV light irradiation. Reversible wettability behaviour was observed with the alternation of light-dark cycles. - Highlights: • PTFE-TiO{sub 2} coatings were deposited by pDC reactive magnetron sputtering. • Blended powder target was used for coatings deposition. • Deposited coatings combined superhydrophobic and photocatalytic properties. • Under UV irradiation coatings exhibited reversible wettability.

  8. Plasma theory and simulation. Third and fourth quarter progress report, July 1-December 31, 1984

    International Nuclear Information System (INIS)

    Birdsall, C.K.

    1984-01-01

    Several theoretical investigations are reported. These topics include: (1) oblique electron Bernstein waves; (2) the effect of large amplitude rf waves on the interchange instability; (3) one-beam Alfven ion-cyclotron instabilities of multibeam ion distribution; (4) linear mode coupling in simulations of the Alfven ion-cyclotron instability; (5) plasma-sheath region; (6) planar magnetron discharges; (7) low-alpha Pierce diode; and (8) ion-acoustic double layers. 8 refs., 37 figs

  9. Structural and magnetic properties of NiZn-ferrite thin films prepared by radio frequency magnetron sputtering

    International Nuclear Information System (INIS)

    Liu Yingli; Li Yuanxun; Zhang Huaiwu; Chen Daming; Mu Chunhong

    2011-01-01

    Polycrystalline NiZn-ferrite thin films were deposited on Si(100) substrate by rf magnetron sputtering, using targets with a nominal composition of Ni 0.5 Zn 0.5 Fe 2 O 4 . The effects of substrate condition, sputtering pressure, and postannealing on the structure and magnetic properties of thin films have been investigated. Our results show that the preferred orientation of the NiZn spinel film changed from (311) to (400) with increasing the Ar pressure from 0.8 to 1.6 Pa, meanwhile, the grain size also increased. Atomic force microscopy analysis indicates that perfect surface morphology of the film can be obtained at a relatively lower sputtering pressure of 1.0 Pa. The relative percentage of residual oxygen increases significantly on a condition of lower sputtering pressure, and plays an important role in film structure due to the strong molecular adsorption tendency of oxygen on the film surface during the deposition process. A thin film with a typical thickness of 1 μm, a saturation magnetization of 150 emu/cm 3 , and a coercivity of 8.8 kA/m has been obtained after annealing at 800 deg. C, which has the potential application in magnetic integrated circuits.

  10. Negative-pressure and low-pressure hydrocephalus: the role of cerebrospinal fluid leaks resulting from surgical approaches to the cranial base.

    Science.gov (United States)

    Filippidis, Aristotelis S; Kalani, M Yashar S; Nakaji, Peter; Rekate, Harold L

    2011-11-01

    Negative-pressure and low-pressure hydrocephalus are rare clinical entities that are frequently misdiagnosed. They are characterized by recurrent episodes of shunt failure because the intracranial pressure is lower than the opening pressure of the valve. In this report the authors discuss iatrogenic CSF leaks as a cause of low- or negative-pressure hydrocephalus after approaches to the cranial base. The authors retrospectively reviewed cases of low-pressure or negative-pressure hydrocephalus presenting after cranial approaches complicated with a CSF leak at their institution. Three patients were identified. Symptoms of high intracranial pressure and ventriculomegaly were present, although the measured pressures were low or negative. A blocked communication between the ventricles and the subarachnoid space was documented in 2 of the cases and presumed in the third. Shunt revisions failed repeatedly. In all cases, temporary clinical and radiographic improvement resulted from external ventricular drainage at subatmospheric pressures. The CSF leaks were sealed and CSF communication was reestablished operatively. In 1 case, neck wrapping was used with temporary success. Negative-pressure or low-pressure hydrocephalus associated with CSF leaks, especially after cranial base approaches, is difficult to treat. The solution often requires the utilization of subatmospheric external ventricular drains to establish a lower ventricular drainage pressure than the drainage pressure created in the subarachnoid space, where the pressure is artificially lowered by the CSF leak. Treatment involves correction of the CSF leak, neck wrapping to increase brain turgor and allow the pressure in the ventricles to rise to the level of the opening pressure of the valve, and reestablishing the CSF route.

  11. Investigations into low pressure methanol synthesis

    DEFF Research Database (Denmark)

    Sharafutdinov, Irek

    The central topic of this work has been synthesis, characterization and optimization of novel Ni-Ga based catalysts for hydrogenation of CO2 to methanol. The overall goal was to search for materials that could be used as a low temperature (and low pressure) methanol synthesis catalyst....... This is required for small scale delocalized methanol production sites, where installation of energy demanding compression units should be avoided. The work was triggered by DFT calculations, which showed that certain bimetallic systems are active towards methanol synthesis from CO2 and H2 at ambient pressure...... containing 5:3 molar ratio of Ni:Ga, the intrinsic activity (methanol production rate per active surface area) is comparable to that of highly optimised Cu/ZnO/Al2O3. Formation of the catalyst was investigated with the aid of in-situ XRD and in-situ XAS techniques. The mechanism of alloying was proposed...

  12. Low-level wind response to mesoscale pressure systems

    Science.gov (United States)

    Garratt, J. R.; Physick, W. L.

    1983-09-01

    Observations are presented which show a strong correlation between low-level wind behaviour (e.g., rotation near the surface) and the passage of mesoscale pressure systems. The latter are associated with frontal transition zones, are dominated by a pressure-jump line and a mesoscale high pressure area, and produce locally large horizontal pressure gradients. The wind observations are simulated by specifying a time sequence of perturbation pressure gradient and subsequently solving the vertically-integrated momentum equations with appropriate initial conditions. Very good agreement is found between observed and calculated winds; in particular, (i) a 360 ° rotation in wind on passage of the mesoscale high; (ii) wind-shift lines produced dynamically by the pressure-jump line; (iii) rapid linear increase in wind speed on passage of the pressure jump.

  13. Morphological analysis of TiB2 thin film prepared by rf magnetron sputtering

    International Nuclear Information System (INIS)

    Dai Wei; Zhang Tongjun; Yang Junyou; Sun Rongxing; Xu Juliang

    2008-01-01

    Superhard TiB 2 thin films were deposited on steel substrates using the radio-frequency magnetron-sputtering technique with a low normalized substrate temperature (0.1 s /T m 2 thin films were overstoichiometric and that the diffusion of Ti and B atoms on the substrate surface was greatly improved at a temperature of 350 deg. C. Moreover, a new dense structure, named the ''equiaxed'' grain structure, was observed by FESEM at this substrate temperature. GIXRD was carried out at different directions with same the grazing-incidence method and the variation of diffraction intensity of the nonrandom textured grains was confirmed. Combined with FESEM and AES analysis, it is suggested that the equiaxed grain structure was located in zone 2 at the normalized substrate temperature as low as 0.18

  14. A system to control low pressure turbine temperatures

    International Nuclear Information System (INIS)

    1980-01-01

    An improved system to control low pressure turbine cycle steam and metal temperatures by governing the heat transfer operation in a moisture separator-reheater is described. The use of the present invention in a pressurized water reactor or a boiling water reactor steam turbine system is demonstrated. (UK)

  15. Multilayer DLC coatings via alternating bias during magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Li Fengji [School of Mechanical and Aerospace Engineering, Nanyang Technological University (Singapore); Zhang, Sam, E-mail: msyzhang@ntu.edu.sg [School of Mechanical and Aerospace Engineering, Nanyang Technological University (Singapore); Kong Junhua [School of Materials Science and Engineering, Nanyang Technological University (Singapore); Zhang Yujuan [Key Laboratory of Special Functional Material, Henan University (China); Zhang Wali [School of Mechanical and Aerospace Engineering, Nanyang Technological University (Singapore)

    2011-05-31

    To combat the high residual stress problem in monolayer diamond-like carbon coatings, this paper fabricated multilayer diamond-like carbon coatings with alternate soft and hard layers via alternating bias during magnetron sputtering. The surface, cross sectional morphology, bonding structures and mechanical properties are investigated. The atomic force microscopy images indicate low bias results in rougher surface with large graphite clusters and voids suggesting low coating density. The multilayered coatings demonstrate relatively smooth surface stemming from higher bias. The cross sectional images from field emission scanning electron microscopy indicate coating thickness decreases as substrate bias increases and confirm that higher bias results in denser coating. Delamination is observed in monolayer coatings due to high residual stress. The trend of sp{sup 3}/sp{sup 2} fraction estimated by X-ray photoelectron spectroscopy is consistent with that of I{sub D}/I{sub G} ratios from Raman spectra, indicating the change of bonding structure with change of substrate bias. Hardness of multilayer diamond-like carbon coating is comparable to the coatings deposited at low constant bias but the adhesion strength and toughness are significantly improved. Alternately biased sputtering deposition provides an alternative when combination of hardness, toughness and adhesion strength is needed in an all diamond-like carbon coating.

  16. Bulk characterization of pharmaceutical powders by low-pressure compression II

    DEFF Research Database (Denmark)

    Hagsten Sørensen, A.; Sonnergaard, Jørn; Hovgaard, L.

    2006-01-01

    The aim of the present study was to investigate the effect of punch and die diameter, sample size, compression speed, and particle size on two low-pressure compression-derived parameters; the compressed density and the Walker w parameter. The excellent repeatability of the low-pressure compressio...

  17. Epidural blood patch for refractory low CSF pressure headache

    DEFF Research Database (Denmark)

    Madsen, Søren Aalbæk; Fomsgaard, Jonna Storm; Jensen, Rigmor

    2011-01-01

    primary effect parameter was total headache burden defined as area under the curve (AUC: intensity × duration) and as secondary effect parameters we identified: intensity (VAS 0-10), frequency (days per month), duration in hours (total hours/month) and also medication days (days on medication...... of non-invasive/conservative measures and invasive measures with epidural blood patch providing the cornerstone of the invasive measures. In the present pilot study we therefore aimed to evaluate the treatment efficacy of epidural blood patch (EBP) in treatment-refractory low-pressure headache. Our......Once believed an exceedingly rare disorder, recent evidence suggests that low cerebrospinal fluid (CSF) pressure headache has to be considered an important cause of new daily persistent headaches, particularly among young and middle-aged individuals. Treatment of low CSF pressure headache consists...

  18. Epidural blood patch for refractory low CSF pressure headache

    DEFF Research Database (Denmark)

    Madsen, Søren Aalbæk; Fomsgaard, Jonna Storm; Jensen, Rigmor

    2011-01-01

    of non-invasive/conservative measures and invasive measures with epidural blood patch providing the cornerstone of the invasive measures. In the present pilot study we therefore aimed to evaluate the treatment efficacy of epidural blood patch (EBP) in treatment-refractory low-pressure headache. Our......Once believed an exceedingly rare disorder, recent evidence suggests that low cerebrospinal fluid (CSF) pressure headache has to be considered an important cause of new daily persistent headaches, particularly among young and middle-aged individuals. Treatment of low CSF pressure headache consists...... primary effect parameter was total headache burden defined as area under the curve (AUC: intensity × duration) and as secondary effect parameters we identified: intensity (VAS 0-10), frequency (days per month), duration in hours (total hours/month) and also medication days (days on medication...

  19. Planar graphs theory and algorithms

    CERN Document Server

    Nishizeki, T

    1988-01-01

    Collected in this volume are most of the important theorems and algorithms currently known for planar graphs, together with constructive proofs for the theorems. Many of the algorithms are written in Pidgin PASCAL, and are the best-known ones; the complexities are linear or 0(nlogn). The first two chapters provide the foundations of graph theoretic notions and algorithmic techniques. The remaining chapters discuss the topics of planarity testing, embedding, drawing, vertex- or edge-coloring, maximum independence set, subgraph listing, planar separator theorem, Hamiltonian cycles, and single- or multicommodity flows. Suitable for a course on algorithms, graph theory, or planar graphs, the volume will also be useful for computer scientists and graph theorists at the research level. An extensive reference section is included.

  20. Low vs Standard Pressures in Gynecologic Laparoscopy: a Systematic Review.

    Science.gov (United States)

    Kyle, Esther B; Maheux-Lacroix, Sarah; Boutin, Amélie; Laberge, Philippe Y; Lemyre, Madeleine

    2016-01-01

    The optimal intraperitoneal pressure during laparoscopy is not known. Recent literature found benefits of using lower pressures, but the safety of doing abdominal surgery with low peritoneal pressures needs to be assessed. This systematic review compares low with standard pneumoperitoneum during gynecologic laparoscopy. We searched Medline, Embase, and the Cochrane Library for randomized controlled trials comparing intraperitoneal pressures during gynecologic laparoscopy. Two authors reviewed references and extracted data from included trials. Risk ratios, mean differences, and standard mean differences were calculated and pooled using RevMan5. Of 2251 studies identified, three were included in the systematic review, for a total of 238 patients. We found a statistically significant but modest diminution in postoperative pain of 0.38 standardized unit based on an original 10-point scale (95% confidence interval [CI], -0.67 to -0.08) during the immediate postoperative period when using low intraperitoneal pressure of 8 mm Hg compared with ≥ 12 mm Hg and of 0.50 (95% CI, -0.80 to -0.21) 24 hours after the surgery. Lower pressures were associated with worse visualization of the surgical field (risk ratio, 10.31; 95% CI, 1.29-82.38). We found no difference between groups over blood loss, duration of surgery, hospital length of stay, or the need for increased pressure. Low intraperitoneal pressures during gynecologic laparoscopy cannot be recommended on the behalf of this review because improvement in pain scores is minimal and visualization of the surgical field is affected. The safety of this intervention as well as cost-effectiveness considerations need to be further studied.

  1. Negative Ions in low pressure discharges

    NARCIS (Netherlands)

    Stoffels - Adamowicz, E.; Stoffels, W.W.; Vender, D.; Haverlag, M.; Kroesen, G.M.W.; Hoog, de F.J.

    1995-01-01

    Several aspects of negative ions in low pressure discharges are treated. The elementary processes, in which negative ions are produced and destroyed, are summarized. The influence of negative ions on plasma operation is analyzed in terms of transport equations. It is shown that diffusion, electric

  2. Chromium-nanodiamond coatings obtained by magnetron sputtering and their tribological properties

    Science.gov (United States)

    Atamanov, M. V.; Khrushchov, M. M.; Marchenko, E. A.; Shevchenko, N. V.; Levin, I. S.; Petrzhik, M. I.; Miroshnichenko, V. I.; Relianu, M. D.

    2017-07-01

    Peculiarities of structure, chemical and phase composition, micromechanical and tribological properties of chromium-based coatings obtained by magnetron-sputtering of composite and/or compacted chromium-nanodiamond targets have been investigated.

  3. Properties of reactively radio frequency-magnetron sputtered (Zr,Sn)TiO4 dielectric films

    International Nuclear Information System (INIS)

    Huang, C.-L.; Hsu, C.-H.

    2004-01-01

    Zirconium tin titanium oxide doped 1 wt % ZnO thin films on n-type Si substrate were deposited by rf magnetron sputtering at a fixed rf power of 350 W with various argon-oxygen (Ar/O 2 ) mixture and different substrate temperatures. Electrical properties and microstructures of ZnO-doped (Zr 0.8 Sn 0.2 )TiO 4 thin films prepared by rf magnetron sputtering on n-type Si(100) substrates at different Ar/O 2 ratios and substrate temperatures have been investigated. The surface structural and morphological characteristics analyzed by x-ray diffraction, scanning electron microscopy, and atomic force microscope were sensitive to the deposition conditions, such as Ar/O 2 ratio (100/0-80/20) and substrate temperature (350 deg. C-450 deg. C). The selected-area diffraction pattern showed that the deposited films exhibited a polycrystalline microstructure. All films exhibited ZST (111) orientation perpendicular to the substrate surface and the grain size as well as the deposition rate of the films increased with the increase of both the Ar partial pressure and the substrate temperature. At a Ar/O 2 ratio of 100/0, rf power level of 350 W and substrate temperature of 450 deg. C, the Zr 0.8 Sn 0.2 TiO 4 films with 6.44 μm thickness possess a dielectric constant of 42 (at 10 MHz), a dissipation factor of 0.065 (at 10 MHz), and a leakage current density of 2x10 -7 A/cm 2 at an electrical field of 1 kV/cm

  4. Abrasion resistant low friction and ultra-hard magnetron sputtered AlMgB14 coatings

    Science.gov (United States)

    Grishin, A. M.

    2016-04-01

    Hard aluminum magnesium boride films were fabricated by RF magnetron sputtering from a single stoichiometric AlMgB14 ceramic target. X-ray amorphous AlMgB14 films are very smooth. Their roughness does not exceed the roughness of Si wafer and Corning glass used as the substrates. Dispersion of refractive index and extinction coefficient were determined within 300 to 2500 nm range for the film deposited onto Corning glass. Stoichiometric in-depth compositionally homogeneous 2 μm thick films on the Si(100) wafer possess the peak values of nanohardness 88 GPa and Young’s modulus 517 GPa at the penetration depth of 26 nm and, respectively, 35 GPa and 275 GPa at 200 nm depth. Friction coefficient was found to be 0.06. The coating scratch adhesion strength of 14 N was obtained as the first chipping of the coating whereas its spallation failure happened at 21 N. These critical loads and the work of adhesion, estimated as high as 18.4 J m-2, surpass characteristics of diamond like carbon films deposited onto tungsten carbide-cobalt (WC-Co) substrates.

  5. Performance characterization of solid oxide cells under high pressure

    DEFF Research Database (Denmark)

    Sun, Xiufu; Bonaccorso, Alfredo Damiano; Graves, Christopher R.

    2014-01-01

    in both fuel cell mode and electrolysis mode. In electrolysis mode at low current density, the performance improvement was counteracted by the increase in open circuit voltage, but it has to be born in mind that the pressurised gas contains higher molar free energy. Operating at high current density...... hydrocarbon fuels, which is normally performed at high pressure to achieve a high yield. Operation of SOECs at elevated pressure will therefore facilitate integration with the downstream fuel synthesis and is furthermore advantageous as it increases the cell performance. In this work, recent pressurised test...... results of a planar Ni-YSZ (YSZ: Yttria stabilized Zirconia) supported solid oxide cell are presented. The test was performed at 800 °C at pressures up to 15 bar. A comparison of the electrochemical performance of the cell at 1 and 3 bar shows a significant and equal performance gain at higher pressure...

  6. Corrosion of thin, magnetron sputtered Nb_2O_5 films

    International Nuclear Information System (INIS)

    Pillis, Marina Fuser; Geribola, Guilherme Altomari; Scheidt, Guilherme; Gonçalves de Araújo, Edval; Lopes de Oliveira, Mara Cristina; Antunes, Renato Altobelli

    2016-01-01

    Highlights: • Niobium oxide based films were obtained by DC magnetron sputtering. • Different deposition times were tested. • The best corrosion resistance was obtained for the Nb_2O_5 film produced at 15′. • Film porosity determines the corrosion resistance. - Abstract: Niobium oxide based thin films were deposited on AISI 316 stainless steel substrates using reactive DC magnetron sputtering. Structure, composition and corrosion resistance of the niobium oxide films were studied. The corrosion behavior of the specimens was evaluated by electrochemical impedance spectroscopy (EIS) and potentiodynamic polarization. The concentration of niobium and oxygen in the films was obtained by Rutherford backscattering spectroscopy (RBS). The film structure was analyzed by X-ray diffractometry. The corrosion resistance of the substrate was improved by the Nb_2O_5 layers. The best protective performance was achieved for the deposition time of 15 min.

  7. Catalytic growth of ZnO nanostructures by r.f. magnetron sputtering

    Directory of Open Access Journals (Sweden)

    Arroyo-Hernández María

    2011-01-01

    Full Text Available Abstract The catalytic effect of gold seed particles deposited on a substrate prior to zinc oxide (ZnO thin film growth by magnetron sputtering was investigated. For this purpose, selected ultra thin gold layers, with thicknesses close to the percolation threshold, are deposited by thermal evaporation in ultra high vacuum (UHV conditions and subsequently annealed to form gold nanodroplets. The ZnO structures are subsequently deposited by r.f. magnetron sputtering in a UHV chamber, and possible morphological differences between the ZnO grown on top of the substrate and on the gold are investigated. The results indicate a moderate catalytic effect for a deposited gold underlayer of 4 nm, quite close to the gold thin film percolation thickness.

  8. RF Reactive Magnetron Sputter Deposition of Silicon Sub-Oxides

    NARCIS (Netherlands)

    Hattum, E.D. van

    2007-01-01

    RF reactive magnetron plasma sputter deposition of silicon sub oxide E.D. van Hattum Department of Physics and Astronomy, Faculty of Sciences, Utrecht University The work described in the thesis has been inspired and stimulated by the use of SiOx layers in the direct inductive printing technology,

  9. A Dynamical Model for the Extra-planar Gas in Spiral Galaxies

    OpenAIRE

    Fraternali, Filippo; Binney, James

    2005-01-01

    Recent HI observations reveal that the discs of spiral galaxies are surrounded by extended gaseous haloes. This extra-planar gas reaches large distances (several kpc) from the disc and shows peculiar kinematics (low rotation and inflow). We have modelled the extra-planar gas as a continuous flow of material from the disc of a spiral galaxy into its halo region. The output of our models are pseudo-data cubes that can be directly compared to the HI data. We have applied these models to two spir...

  10. Effects of annealing temperature on the structural, mechanical and electrical properties of flexible bismuth telluride thin films prepared by high-pressure RF magnetron sputtering

    Science.gov (United States)

    Singkaselit, Kamolmad; Sakulkalavek, Aparporn; Sakdanuphab, Rachsak

    2017-09-01

    In this work Bi x Te y thin films were deposited on polyimide substrate by a high-pressure RF magnetron sputtering technique. The deposited condition was maintained using a high pressure of 1.3  ×  10-2 mbar. The as-deposited films show Bi2Te3 structure with Te excess phase (Te-rich Bi2Te3). After that, as-deposited films were annealed in the vacuum chamber under the N2 flow at temperatures from 250 to 400 °C for one hour. The microstructure, cross-section, [Bi]:[Te] content, and the mechanical, electrical and thermoelectric properties of as-deposited and different annealed films were investigated. It was found that the annealing temperature enhanced the crystallinity and film density for the temperature range 250-300 °C. However, the crystal structure of Bi2Te3 almost changed to the BiTe structure after annealing the films above 350 °C, due to the re-evaporation of Te. Nano-indentation results and cross-section images indicated that the hardness of the films related to the film density. The maximum hardness of 2.30 GPa was observed by annealing the films at 300 °C. As a result of an improvement in crystallinity and phase changes, the highest power factor of 11.45  ×  10-4 W m-1K-2 at 300 °C with the carrier concentration and mobility of 6.15  ×  1020 cm-3 and 34.03 cm2 V-1 s-1, respectively, was achieved for the films annealed at 400 °C. Contribution at the 4th Southeast Asia Conference on Thermoelectrics 2016 (SACT 2016), 15-18 December 2016, Da Nang City, Vietnam.

  11. Low-temperature processed ultrathin TiO2 for efficient planar heterojunction perovskite solar cells

    International Nuclear Information System (INIS)

    Huang, Xiaokun; Hu, Ziyang; Xu, Jie; Wang, Peng; Zhang, Jing; Zhu, Yuejin

    2017-01-01

    Highlights: • An ultrathin and discrete TiO 2 (u-TiO 2 ) was fabricated at low temperature. • High-performance perovskite solar cells based u-TiO 2 was realized. • u-TiO 2 between perovskite and FTO functions as a bridge for electron transport. • u-TiO 2 accelerates electron transfer and alleviates charge recombination. - Abstract: A compact TiO 2 (c-TiO 2 ) layer fabricated by spin coating or spray pyrolysis following a high-temperature sintering is a routine in high-performance planar heterojunction perovskite solar cells. Here, we demonstrate an effective low-temperature approach to fabricate an ultrathin and discrete TiO 2 (u-TiO 2 ) for enhancing photovoltaic performance of perovskite solar cells. Via hydrolysis of low-concentration TiCl 4 solution at 70 °C, u-TiO 2 was grown on a fluorine doped tin oxide (FTO) substrate, forming the electron selective contact with the photoactive CH 3 NH 3 PbI 3 film. The perovskite solar cell using u-TiO 2 achieves an efficiency of 13.42%, which is compared to 13.56% of the device using c-TiO 2 prepared by high-temperature sintering. Cyclic voltammetry, steady-state photoluminescence spectroscopy and electrical impedance spectroscopy were conducted to study interface engineering and charge carrier dynamics. Our results suggest that u-TiO 2 functions as a bridge for electron transport between perovskite and FTO, which accelerates electron transfer and alleviates charge recombination.

  12. Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates

    Energy Technology Data Exchange (ETDEWEB)

    Brennan, Christopher J.; Neumann, Christopher M.; Vitale, Steven A., E-mail: steven.vitale@ll.mit.edu [Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02420 (United States)

    2015-07-28

    Fully depleted silicon-on-insulator transistors were fabricated using two different metal gate deposition mechanisms to compare plasma damage effects on gate oxide quality. Devices fabricated with both plasma-enhanced atomic-layer-deposited (PE-ALD) TiN gates and magnetron plasma sputtered TiN gates showed very good electrostatics and short-channel characteristics. However, the gate oxide quality was markedly better for PE-ALD TiN. A significant reduction in interface state density was inferred from capacitance-voltage measurements as well as a 1200× reduction in gate leakage current. A high-power magnetron plasma source produces a much higher energetic ion and vacuum ultra-violet (VUV) photon flux to the wafer compared to a low-power inductively coupled PE-ALD source. The ion and VUV photons produce defect states in the bulk of the gate oxide as well as at the oxide-silicon interface, causing higher leakage and potential reliability degradation.

  13. In vitro quantification of the performance of model-based mono-planar and bi-planar fluoroscopy for 3D joint kinematics estimation.

    Science.gov (United States)

    Tersi, Luca; Barré, Arnaud; Fantozzi, Silvia; Stagni, Rita

    2013-03-01

    Model-based mono-planar and bi-planar 3D fluoroscopy methods can quantify intact joints kinematics with performance/cost trade-off. The aim of this study was to compare the performances of mono- and bi-planar setups to a marker-based gold-standard, during dynamic phantom knee acquisitions. Absolute pose errors for in-plane parameters were lower than 0.6 mm or 0.6° for both mono- and bi-planar setups. Mono-planar setups resulted critical in quantifying the out-of-plane translation (error bi-planar in quantifying the rotation along bone longitudinal axis (error bi-planar (error comparable to bi-planar, but with halved computational costs, halved segmentation time and halved ionizing radiation dose. Bi-planar analysis better compensated for the out-of-plane uncertainty that is differently propagated to relative kinematics depending on the setup. To take its full benefits, the motion task to be investigated should be designed to maintain the joint inside the visible volume introducing constraints with respect to mono-planar analysis.

  14. The influence of target oxygen on the YBa2Cu3O6+δ DC Magnetron sputtering process

    International Nuclear Information System (INIS)

    Larsson, G.; Selinder, T.I.; Helmersson, U

    1990-01-01

    The oxygen partial pressure and the target potential have been monitored under a range of process conditions during single target dc magnetron sputtering of Y-Ba-Cu-O. The introduced sputtering gas consisted in all but one instance of pure argon and hence the oxygen present in the plasma originated mainly from the target. During the first hours of sputtering the oxygen partial pressure was of the same magnitude as the argon pressure (3.0 Pa). As the oxygen was released from the target and subsequently removed by pumping, the target potential increased and the film composition became more stoichiometric. After 30-40 hours of sputtering the target potential and the oxygen pressure stabilized and the film composition was equal to that of the stoichiometric target. If an oxygen flow exceeding a critical level was mixed into the sputtering gas the target potential and the deposition rate decreased swiftly. This was due to target oxidation, further manifested in changing plasma and target colours. In some instances the stabilization after 'presputtering' was incomplete and oscillations in target voltage and oxygen partial pressure were observed. The fluctuations made it virtually impossible to obtain stoichiometric films. The oscillative behaviour of the sputtering process is tentatively explained by a target temperature dependent oxygen diffusion. (au)

  15. Influence of reactive oxygen species during deposition of iron oxide films by high power impulse magnetron sputtering

    Science.gov (United States)

    Stranak, V.; Hubicka, Z.; Cada, M.; Bogdanowicz, R.; Wulff, H.; Helm, C. A.; Hippler, R.

    2018-03-01

    Iron oxide films were deposited using high power impulse magnetron sputtering (HiPIMS) of an iron cathode in an argon/oxygen gas mixture at different gas pressures (0.5 Pa, 1.5 Pa, and 5.0 Pa). The HiPIMS system was operated at a repetition frequency f  =  100 Hz with a duty cycle of 1%. A main goal is a comparison of film growth during conventional and electron cyclotron wave resonance-assisted HiPIMS. The deposition plasma was investigated by means of optical emission spectroscopy and energy-resolved mass spectrometry. Active oxygen species were detected and their kinetic energy was found to depend on the gas pressure. Deposited films were characterized by means of spectroscopic ellipsometry and grazing incidence x-ray diffraction. Optical properties and crystallinity of as-deposited films were found to depend on the deposition conditions. Deposition of hematite iron oxide films with the HiPIMS-ECWR discharge is attributed to the enhanced production of reactive oxygen species.

  16. 8×8 Planar Phased Array Antenna with High Efficiency and Insensitivity Properties for 5G Mobile Base Stations

    DEFF Research Database (Denmark)

    Ojaroudiparchin, Naser; Shen, Ming; Pedersen, Gert F.

    2016-01-01

    An insensitive planar phased array antenna with high efficiency function for 5G applications is introduced in this study. 64-elements of compact slot-loop antenna elements have been used to form the 8×8 planar array. The antenna is designed on a low cost FR4 substrate and has good performance in ...... at both sides of the substrate and could be used for mobile base station (MBS) applications. The proposed planar array could be integrated with the transceivers on the low-cost printed circuit boards (PCBs) to reduce the manufacturing cost....

  17. Growth, structure and magnetic properties of magnetron sputtered FePt thin films

    Energy Technology Data Exchange (ETDEWEB)

    Cantelli, Valentina

    2010-07-01

    The L1{sub 0} FePt phase belongs to the most promising hard ferromagnetic materials for high density recording media. The main challenges for thin FePt films are: (i) to lower the process temperature for the transition from the soft magnetic A1 to the hard magnetic L1{sub 0} phase, (ii) to realize c-axes preferential oriented layers independently from the substrate nature and (iii) to control layer morphology supporting the formation of FePt-L1{sub 0} selforganized isolated nanoislands towards an increase of the signal-to-noise ratio. In this study, dc magnetron sputtered FePt thin films on amorphous substrates were investigated. The work is focused on the correlation between structural and magnetic properties with respect to the influence of deposition parameters like growth mode (cosputtering vs. layer - by - layer) and the variation of the deposition gas (Ar, Xe) or pressure (0.3-3 Pa). In low-pressure Ar discharges, high energetic particle impacts support vacancies formation during layer growth lowering the phase transition temperature to (320{+-}20) C. By reducing the particle kinetic energy in Xe discharges, highly (001) preferential oriented L1{sub 0}-FePt films were obtained on a-SiO{sub 2} after vacuum annealing. L1{sub 0}-FePt nano-island formation was supported by the introduction of an Ag matrix, or by random ballistic aggregation and atomic self shadowing realized by FePt depositions at very high pressure (3 Pa). The high coercivity (1.5 T) of granular, magnetic isotropic FePt layers, deposited in Ar discharges, was measured with SQUID magnetometer hysteresis loops. For non-granular films with (001) preferential orientation the coercivity decreased (0.6 T) together with an enhancement of the out-of- plane anisotropy. Nanoislands show a coercive field close to the values obtained for granular layers but exhibit an in-plane easy axis due to shape anisotropy effects. An extensive study with different synchrotron X-ray scattering techniques, mainly

  18. Planar intrinsic Josephson junctions with in-plane aligned YBCO films

    CERN Document Server

    Zhang, L; Kobayashi, T; Goto, T; Mukaida, M

    2002-01-01

    Planar type devices were fabricated by patterning in-plane aligned YBa sub 2 Cu sub 3 O sub 7 sub - subdelta (YBCO) films. The current-voltage characteristics along the c-axis at various temperatures and oxygen contents were measured. The current voltage curves showing supercurrent and hysteresis were obtained for the samples annealed at an oxygen pressure of 1.3 x 10 sup 4 Pa, while the supercurrent and hysteresis became smaller and even disappeared as the oxygen pressure decreased. The relationships between the critical currents and temperatures are similar to those of d-wave superconducting tunnel junctions. These results indicate the formation of stacks of intrinsic Josephson junctions, which are useful for developing high-frequency electron devices.

  19. Planar intrinsic Josephson junctions with in-plane aligned YBCO films

    International Nuclear Information System (INIS)

    Zhang, L; Moriya, M; Kobayashi, T; Goto, T; Mukaida, M

    2002-01-01

    Planar type devices were fabricated by patterning in-plane aligned YBa 2 Cu 3 O 7-δ (YBCO) films. The current-voltage characteristics along the c-axis at various temperatures and oxygen contents were measured. The current voltage curves showing supercurrent and hysteresis were obtained for the samples annealed at an oxygen pressure of 1.3 x 10 4 Pa, while the supercurrent and hysteresis became smaller and even disappeared as the oxygen pressure decreased. The relationships between the critical currents and temperatures are similar to those of d-wave superconducting tunnel junctions. These results indicate the formation of stacks of intrinsic Josephson junctions, which are useful for developing high-frequency electron devices

  20. Planar Pressure Field Determination in the Initial Merging Zone of an Annular Swirling Jet Based on Stereo-PIV Measurements

    Directory of Open Access Journals (Sweden)

    Eric Van den Bulck

    2008-11-01

    Full Text Available In this paper the static pressure field of an annular swirling jet is measured indirectly using stereo-PIV measurements. The pressure field is obtained from numerically solving the Poisson equation, taken into account the axisymmetry of the flow. At the boundaries no assumptions are made and the exact boundary conditions are applied. Since all source terms can be measured using stereo-PIV and the boundary conditions are exact, no assumptions other than axisymmetry had to be made in the calculation of the pressure field. The advantage of this method of indirect pressure measurement is its high spatial resolution compared to the traditional pitot probes. Moreover this method is non-intrusive while the insertion of a pitot tube disturbs the flow. It is shown that the annular swirling flow can be divided into three regimes: a low, an intermediate and a high swirling regime. The pressure field of the low swirling regime is the superposition of the pressure field of the non-swirling jet and a swirl induced pressure field due to the centrifugal forces of the rotating jet. As the swirl increases, the swirl induced pressure field becomes dominant and for the intermediate and high swirling regimes, the simple radial equilibrium equation holds.

  1. Planar Pressure Field Determination in the Initial Merging Zone of an Annular Swirling Jet Based on Stereo-PIV Measurements.

    Science.gov (United States)

    Vanierschot, Maarten; Van den Bulck, Eric

    2008-11-28

    In this paper the static pressure field of an annular swirling jet is measured indirectly using stereo-PIV measurements. The pressure field is obtained from numerically solving the Poisson equation, taken into account the axisymmetry of the flow. At the boundaries no assumptions are made and the exact boundary conditions are applied. Since all source terms can be measured using stereo-PIV and the boundary conditions are exact, no assumptions other than axisymmetry had to be made in the calculation of the pressure field. The advantage of this method of indirect pressure measurement is its high spatial resolution compared to the traditional pitot probes. Moreover this method is non-intrusive while the insertion of a pitot tube disturbs the flow. It is shown that the annular swirling flow can be divided into three regimes: a low, an intermediate and a high swirling regime. The pressure field of the low swirling regime is the superposition of the pressure field of the non-swirling jet and a swirl induced pressure field due to the centrifugal forces of the rotating jet. As the swirl increases, the swirl induced pressure field becomes dominant and for the intermediate and high swirling regimes, the simple radial equilibrium equation holds.

  2. Particle-based optical pressure sensors for 3D pressure mapping.

    Science.gov (United States)

    Banerjee, Niladri; Xie, Yan; Chalaseni, Sandeep; Mastrangelo, Carlos H

    2015-10-01

    This paper presents particle-based optical pressure sensors for in-flow pressure sensing, especially for microfluidic environments. Three generations of pressure sensitive particles have been developed- flat planar particles, particles with integrated retroreflectors and spherical microballoon particles. The first two versions suffer from pressure measurement dependence on particles orientation in 3D space and angle of interrogation. The third generation of microspherical particles with spherical symmetry solves these problems making particle-based manometry in microfluidic environment a viable and efficient methodology. Static and dynamic pressure measurements have been performed in liquid medium for long periods of time in a pressure range of atmospheric to 40 psi. Spherical particles with radius of 12 μm and balloon-wall thickness of 0.5 μm are effective for more than 5 h in this pressure range with an error of less than 5%.

  3. Annealing effect of ITO and ITO/Cu transparent conductive films in low pressure hydrogen atmosphere

    International Nuclear Information System (INIS)

    Lin, T.-C.; Chang, S.-C.; Chiu, C.-F.

    2006-01-01

    A layer of copper was sputtered onto an indium tin oxide (ITO) glass substrates to form an ITO/Cu film, using a direct current magnetron operated at room temperature and in argon gas. The ITO and ITO/Cu films were heated in vacuum, and in hydrogen gas, to study their dependence of electronic and optical properties on annealing temperature. The resistivity of the ITO film was reduced from 6.2 x 10 -4 to 2.7 x 10 -4 Ω cm, and the average optical transmittance was improved to above 90% by the annealing process. The ITO/Cu film showed a low value of resistivity of 2.8 x 10 -4 Ω cm and the transmittance was between 58 and 72%

  4. Direct current magnetron sputtering deposition of InN thin films

    International Nuclear Information System (INIS)

    Cai Xingmin; Hao Yanqing; Zhang Dongping; Fan Ping

    2009-01-01

    In this paper, InN thin films were deposited on Si (1 0 0) and K9 glass by reactive direct current magnetron sputtering. The target was In metal with the purity of 99.999% and the gases were Ar (99.999%) and N 2 (99.999%). The properties of InN thin films were studied. Scanning electron microscopy (SEM) shows that the film surface is very rough and energy dispersive X-ray spectroscopy (EDX) shows that the film contains In, N and very little O. X-ray diffraction (XRD) and Raman scattering reveal that the film mainly contains hexagonal InN. The four-probe measurement shows that InN film is conductive. The transmission measurement demonstrates that the transmission of InN deposited on K9 glass is as low as 0.5% from 400 nm to 800 nm.

  5. Blood pressure response to low level static contractions

    DEFF Research Database (Denmark)

    Fallentin, Nils; Jørgensen, Kurt

    1992-01-01

    The present study re-examines the 15% MVC concept, i.e. the existence of a circulatory steady-state in low intensity static contractions below 15% of maximal voluntary contraction (MVC). Mean arterial blood pressure was studied during static endurance contractions of the elbow flexor and extensor...... 0.7) min for elbow extension]. Mean arterial blood pressure exhibited a continuous and progressive increase during the 10% MVC contractions indicating that the 15% MVC concept would not appear to be valid. The terminal blood pressure value recorded at the point of exhaustion in the 10% MVC elbow...... the circulation to the muscles was arrested just prior to the cessation of the contraction, blood pressure only partly recovered and remained elevated for as long as the occlusion persisted, indicating the level of pressure-raising muscle chemoreflexes. Based on blood pressure recordings obtained during...

  6. Ultraviolet emitting (Y1-xGd x)2O3-δ thin films deposited by radio frequency magnetron sputtering; structure-property-thin film processing relationships

    International Nuclear Information System (INIS)

    Fowlkes, J.D.; Fitz-Gerald, J.M.; Rack, P.D.

    2007-01-01

    The effects that the oxygen partial pressure, substrate temperature and annealing temperature have on the cathodoluminescence (CL) efficiency of radio frequency magnetron sputter deposited Gd-doped Y 2 O 3 thin films is investigated. Furthermore these sputtering parameters are correlated to the degree of crystallinity, the phases present (cubic (α) versus monoclinic (β) Y 2 O 3 ), and the stoichiometry of the thin films. Films deposited at room temperature (RT) did not CL, however, the films were activated by a post-deposition anneal at 1273 K for 6 h. Films deposited at 873 K had a very low CL efficiency which was significantly enhanced by a post-deposition anneal. For RT deposited films the external CL efficiency increased with increasing oxygen partial pressure for the range studied, however the opposite trend was observed for the 873 K deposited films. Examination of the morphology and grain size of the high temperature deposited films revealed that the average grain size increased with decreasing partial pressure and the observed increase in the external CL efficiency was attributed to enhanced anomalous diffraction. An intrinsic CL efficiency term was determined to circumvent the effects of the enhanced anomalous diffraction, and the CL efficiency was correlated to the integrated intensity of the (222) of the cubic α-Y 2 O 3 phase

  7. Low pressure microenvironments: Methane production at 50 mbar and 100 mbar by methanogens

    Science.gov (United States)

    Mickol, Rebecca L.; Kral, Timothy A.

    2018-04-01

    Low pressure is often overlooked in terms of possible biocidal effects when considering a habitable environment on Mars. Few experiments have investigated the ability for microorganisms to actively grow under low pressure conditions, despite the atmosphere being a location on Earth where organisms could be exposed to these pressures. Three species of methanogens (Methanobacterium formicicum, Methanosarcina barkeri, Methanococcus maripaludis) were tested for their ability to actively grow (demonstrate an increase in methane production and optical density) within low-pressure microenvironments at 50 mbar or 100 mbar. M. formicicum was the only species to demonstrate both an increase in methane and an increase in optical density during the low-pressure exposure period for experiments conducted at 50 mbar and 100 mbar. In certain experiments, M. barkeri showed an increase in optical density during the low-pressure exposure period, likely due to the formation of multicellular aggregates, but minimal methane production (conditions. Results indicate that low pressure exposure may just be inhibitory during the exposure itself, and metabolism may resume following incubation under more ideal conditions. Further work is needed to address growth/survival under Mars surface pressures.

  8. Magnetron co-sputtering system for coating ICF targets

    International Nuclear Information System (INIS)

    Hsieh, E.J.; Meyer, S.F.; Halsey, W.G.; Jameson, G.T.; Wittmayer, F.J.

    1981-01-01

    Fabrication of Inertial Confinement Fusion (ICF) targets requires deposition of various types of coatings on microspheres. The mechanical strength, and surface finish of the coatings are of concern in ICF experiments. The tensile strength of coatings can be controlled through grain refinement, selective doping and alloy formation. We have constructed a magnetron co-sputtering system to produce variable density profile coatings with high tensile strength on microspheres

  9. Special traits of the millimeter wave relativistic magnetron

    International Nuclear Information System (INIS)

    Berdin, S.A.; Chizhov, K.V.; Gadetski, N.P.; Korenev, V.G.; Lebedenko, A.N.; Marchenko, M.I.; Magda, I.I.; Melezhik, O.G.; Sinitsin, V.G.; Soshenko, V.A.

    2014-01-01

    A 8 mm band relativistic magnetron is investigated experimentally and by means of numerical simulation. The physical effects are analyzed which influence negatively the r.f. generation. The processes capable of reducing effectiveness of the generation and duration of the generated pulse include forward and backward axial flows of electrons, and intense electric fields - the generated microwaves and the fields owing to the space charge

  10. Effects of long-term low atmospheric pressure on gas exchange and growth of lettuce

    Science.gov (United States)

    Tang, Yongkang; Guo, Shuangsheng; Dong, Wenping; Qin, Lifeng; Ai, Weidang; Lin, Shan

    2010-09-01

    The objectives of this research were to determine photosynthesis, evapotranspiration and growth of lettuce at long-term low atmospheric pressure. Lettuce ( Lactuca sativa L . cv. Youmaicai) plants were grown at 40 kPa total pressure (8.4 kPa p) or 101 kPa total pressure (20.9 kPa p) from seed to harvest for 35 days. Germination rate of lettuce seeds decreased by 7.6% at low pressure, although this was not significant. There was no significant difference in crop photosynthetic rate between hypobaria and ambient pressure during the 35-day study. The crop evapotranspiration rate was significantly lower at low pressure than that at ambient pressure from 20 to 30 days after planting (DAP), but it had no significant difference before 20 DAP or after 30 DAP. The growth cycle of lettuce plants at low pressure was delayed. At low pressure, lettuce leaves were curly at the seedling stage and this disappeared gradually as the plants grew. Ambient lettuce plants were yellow and had an epinastic growth at harvest. The shoot height, leaf number, leaf length and shoot/root ratio were lower at low pressure than those at ambient pressure, while leaf area and root growth increased. Total biomass of lettuce plants grown at two pressures had no significant difference. Ethylene production at low pressure decreased significantly by 38.8% compared with ambient pressure. There was no significant difference in microelements, nutritional phytochemicals and nitrate concentrations at the two treatments. This research shows that lettuce can be grown at long-term low pressure (40 kPa) without significant adverse effects on seed germination, gas exchange and plant growth. Furthermore, ethylene release was reduced in hypobaria.

  11. Carbon resistor pressure gauge calibration at low stresses

    International Nuclear Information System (INIS)

    Cunningham, Bruce; Vandersall, Kevin S.; Niles, Angela M.; Greenwood, Daniel W.; Garcia, Frank; Forbes, Jerry W.; Wilson, William H.

    2002-01-01

    The 470 Ohm carbon resistor gauge has been used in the stress range up to 4-5 GPa for highly heterogeneous materials and/or divergent flow experiments. The attractiveness of the gauge is its rugged nature, simple construction, low cost, reproducibility, and survivability in dynamic events. Gauge drawbacks are the long time response to pressure equilibration and gauge resistance hysteresis. In the regime below 0.4 GPa, gauge calibration has been extrapolated. Because of the need for calibration data within this low stress regime, calibration experiments were performed using a split-Hopkinson bar, drop tower apparatus, and gas pressure chamber. Since the performance of the gauge at elevated temperatures is a concern, the change in resistance due to heating at atmospheric pressure was also investigated. Details of the various calibration arrangements and the results are discussed and compared to a calibration curve fit to previously published calibration data

  12. Study of SmS properties in the low pressure phase (black phase)

    International Nuclear Information System (INIS)

    Bordier, G.

    1986-01-01

    SmS was studied for the transition from low pressure phase (black phase) to high pressure phase with an intermediate valence. But the study of the black phase is very rich. The variations of electron transport properties with pressure at low temperature show a semi-metal phase located, in the pressure-temperature diagram in the black phase for pressure over 4 kbars, corresponding to the phase B'of the doping-temperature diagram. Electron spin resonance shows a lack of sulfur and nearby this defect a samarium ion, magnetically coupled with the matrix, presents a divalent trivalent transition. Resonance lines are broadened with temperature. Conductivity relaxations occur at low pressure and low temperature by trapping a conduction electron, by magnetic exchange giving a bounded magnetic polaron. The relaxation time at null magnetic field is activated. An approximation of trapping barrier and critical field corresponding the maximum magnetoresistance is given by a model [fr

  13. (U) Influence of Compaction Model Form on Planar and Cylindrical Compaction Geometries

    Energy Technology Data Exchange (ETDEWEB)

    Fredenburg, David A. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Carney, Theodore Clayton [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Fichtl, Christopher Allen [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Ramsey, Scott D. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2018-01-05

    The dynamic compaction response of CeO2 is examined within the frameworks of the Ramp and P-a compaction models. Hydrocode calculations simulating the dynamic response of CeO2 at several distinct pressures within the compaction region are investigated in both planar and cylindrically convergent geometries. Findings suggest additional validation of the compaction models is warranted under complex loading configurations.

  14. A study of the transient plasma potential in a pulsed bi-polar dc magnetron discharge

    International Nuclear Information System (INIS)

    Bradley, J W; Karkari, S K; Vetushka, A

    2004-01-01

    The temporal evolution of the plasma potential, V p , in a pulsed dc magnetron plasma has been determined using the emissive probe technique. The discharge was operated in the 'asymmetric bi-polar' mode, in which the discharge voltage changes polarity during part of the pulse cycle. The probe measurements, with a time-resolution of 20 ns or better, were made along a line above the racetrack, normal to the plane of the cathode target, for a fixed frequency (100 kHz), duty cycle (50%), argon pressure (0.74 Pa) and discharge power (583 W). At all the measured positions, V p was found to respond to the large and rapid changes in the cathode voltage, V d , during the different phases of the pulse cycle, with V p always more positive than V d . At a typical substrate position (>80 mm from the target), V p remains a few volts above the most positive surface in the discharge at all times. In the 'on' phase of the pulse, the measurements show a significant axial electric field is generated in the plasma, with the plasma potential dropping by a total of about 30 V over a distance of 70 mm, from the bulk plasma to a position close to the beginning of the cathode fall. This is consistent with measurements made in the dc magnetron. During the stable 'reverse' phase of the discharge, for distances greater than 18 mm from the target, the axial electric field is found to collapse, with V p elevated uniformly to about 3 V above V d . Between the target and this field-free region an ion sheath forms, and the current flowing to the target is still an ion current in this 'reverse' period. During the initial 200 ns of the voltage 'overshoot' phase (between 'on' and 'reverse' phases), V d reached a potential of +290 V; however, close to the target, V p was found to attain a much higher value, namely +378 V. Along the line of measurement, the axial electric field reverses in direction in this phase, and an electron current of up to 9 A flows to the target. The spatial and temporal

  15. Tribological properties of nc-TiC/a-C:H coatings prepared by magnetron sputtering at low and high ion bombardment of the growing film

    Czech Academy of Sciences Publication Activity Database

    Souček, P.; Schmidtová, T.; Bursíková, V.; Vašina, P.; Pei, Y.; De Hos, J. Th. M.; Caha, O.; Peřina, Vratislav; Mikšová, Romana; Malinský, Petr

    2014-01-01

    Roč. 241, FEB (2014), s. 64-73 ISSN 0257-8972 R&D Projects: GA MŠk(XE) LM2011019; GA ČR(CZ) GD104/09/H080 Institutional support: RVO:61389005 Keywords : nanocomposites * magnetron sputtering * Titanium carbide * ion flux * friction * wear Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.998, year: 2014

  16. Turbine airfoil cooling system with cooling systems using high and low pressure cooling fluids

    Science.gov (United States)

    Marsh, Jan H.; Messmann, Stephen John; Scribner, Carmen Andrew

    2017-10-25

    A turbine airfoil cooling system including a low pressure cooling system and a high pressure cooling system for a turbine airfoil of a gas turbine engine is disclosed. In at least one embodiment, the low pressure cooling system may be an ambient air cooling system, and the high pressure cooling system may be a compressor bleed air cooling system. In at least one embodiment, the compressor bleed air cooling system in communication with a high pressure subsystem that may be a snubber cooling system positioned within a snubber. A delivery system including a movable air supply tube may be used to separate the low and high pressure cooling subsystems. The delivery system may enable high pressure cooling air to be passed to the snubber cooling system separate from low pressure cooling fluid supplied by the low pressure cooling system to other portions of the turbine airfoil cooling system.

  17. Electrical and Optical Properties of Fluorine Doped Tin Oxide Thin Films Prepared by Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Ziad Y. Banyamin

    2014-10-01

    Full Text Available Fluorine doped tin oxide (FTO coatings have been prepared using the mid-frequency pulsed DC closed field unbalanced magnetron sputtering technique in an Ar/O2 atmosphere using blends of tin oxide and tin fluoride powder formed into targets. FTO coatings were deposited with a thickness of 400 nm on glass substrates. No post-deposition annealing treatments were carried out. The effects of the chemical composition on the structural (phase, grain size, optical (transmission, optical band-gap and electrical (resistivity, charge carrier, mobility properties of the thin films were investigated. Depositing FTO by magnetron sputtering is an environmentally friendly technique and the use of loosely packed blended powder targets gives an efficient means of screening candidate compositions, which also provides a low cost operation. The best film characteristics were achieved using a mass ratio of 12% SnF2 to 88% SnO2 in the target. The thin film produced was polycrystalline with a tetragonal crystal structure. The optimized conditions resulted in a thin film with average visible transmittance of 83% and optical band-gap of 3.80 eV, resistivity of 6.71 × 10−3 Ω·cm, a carrier concentration (Nd of 1.46 × 1020 cm−3 and a mobility of 15 cm2/Vs.

  18. MODEL TESTING OF LOW PRESSURE HYDRAULIC TURBINE WITH HIGHER EFFICIENCY

    Directory of Open Access Journals (Sweden)

    V. K. Nedbalsky

    2007-01-01

    Full Text Available A design of low pressure turbine has been developed and it is covered by an invention patent and a useful model patent. Testing of the hydraulic turbine model has been carried out when it was installed on a vertical shaft. The efficiency was equal to 76–78 % that exceeds efficiency of the known low pressure blade turbines. 

  19. Exact relativistic solution of disordered radiation with planar symmetry

    International Nuclear Information System (INIS)

    Teixeira, A.F. Da F.; Wolk, I.; Som, M.M.

    1977-01-01

    An exact solution of the Einstein equations corresponding to and equilibrium distribution of disordered electromagnetic radiation with planar symmetry is obtained. This equilibrium is due solely to the gravitational and pressure effects inherent to the radiation. The distribution of radiation is found to be maximum and finite at the plane of symmetry, and to decrease monotonically in directions normal to this plane. The solution tends asymptotically to the static plane symmetric vacuum solution obtained by Levi-Civita (Atti. Accad. Naz. Lincei Rc.; 27:240 (1918)). Time-like and null geodesics are discussed. (author)

  20. Fabrication and characterization of flaky core-shell particles by magnetron sputtering silver onto diatomite

    Science.gov (United States)

    Wang, Yuanyuan; Zhang, Deyuan; Cai, Jun

    2016-02-01

    Diatomite has delicate porous structures and various shapes, making them ideal templates for microscopic core-shell particles fabrication. In this study, a new process of magnetron sputtering assisted with photoresist positioning was proposed to fabricate lightweight silver coated porous diatomite with superior coating quality and performance. The diatomite has been treated with different sputtering time to investigate the silver film growing process on the surface. The morphologies, constituents, phase structures and surface roughness of the silver coated diatomite were analyzed with SEM, EDS, XRD and AFM respectively. The results showed that the optimized magnetron sputtering time was 8-16 min, under which the diatomite templates were successfully coated with uniform silver film, which exhibits face centered cubic (fcc) structure, and the initial porous structures were kept. Moreover, this silver coating has lower surface roughness (RMS 4.513 ± 0.2 nm) than that obtained by electroless plating (RMS 15.692 ± 0.5 nm). And the infrared emissivity of coatings made with magnetron sputtering and electroless plating silver coated diatomite can reach to the lowest value of 0.528 and 0.716 respectively.

  1. Consumable Process Development for Chemical Mechanical Planarization of Bit Patterned Media for Magnetic Storage Fabrication

    Science.gov (United States)

    Bonivel, Joseph T., Jr.

    2010-09-01

    As the superparamagnetic limit is reached, the magnetic storage industry looks to circumvent the barrier by implementing patterned media (PM) as a viable means to store and access data. Chemical mechanical polishing (CMP) is a semiconductor fabrication technique used to planarize surfaces and is investigated as a method to ensure that the PM is polished to surface roughness parameters that allow the magnetic read/write head to move seamlessly across the PM. Results from this research have implications in feasibility studies of utilizing CMP as the main planarization technique for PM fabrication. Benchmark data on the output parameters of the CMP process, for bit patterned media (BPM), based on the machine process parameters, pad properties, and slurry characteristics are optimized. The research was conducted in a systematic manner in which the optimized parameters for each phase are utilized in future phases. The optimum results from each of the phases provide an overall optimum characterization for BPM CMP. Results on the CMP machine input parameters indicate that for optimal surface roughness and material removal, low polish pressures and high velocities should be used on the BPM. Pad characteristics were monitored by non destructive technique and results indicate much faster deterioration of all padcharacteristics versus polish time of BPM when compared to IC CMP. The optimum pad for PM polishing was the IC 1400 dual layer Suba V pad with a shore hardness of 57, and a k-groove pattern. The final phase of polishing evaluated the slurry polishing properties and novel nanodiamond (ND) slurry was created and benchmarked on BPM. The resulting CMP output parameters were monitored and neither the ND slurry nor the thermally responsive polymer slurry performed better than the commercially available Cabot iCue slurry for MRR or surface roughness. Research results indicate CMP is a feasible planarization technique for PM fabrication, but successful implementation of CMP

  2. Spatiotemporal synchronization of drift waves in a magnetron sputtering plasma

    Czech Academy of Sciences Publication Activity Database

    Martines, E.; Zuin, M.; Cavazzana, R.; Adámek, Jiří; Antoni, V.; Serianni, G.; Spolaore, M.; Vianello, N.

    2014-01-01

    Roč. 21, č. 10 (2014), s. 102309-102309 ISSN 1070-664X Institutional support: RVO:61389021 Keywords : Drift waves * Magnetron sputtering plasma * Spatiotemporal synchronization Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 2.142, year: 2014 http://dx.doi.org/10.1063/1.4898693

  3. Risk analysis of in-service pressure piping containing defects

    International Nuclear Information System (INIS)

    Lin, Y.C.; Xie, Y.J.; Wang, X.H.; Luo, H.

    2004-01-01

    The reliability of pressure piping containing defects is important in engineering. The failure probability of pressure piping containing defects may be used as a guide to the most economic deployment of resources on maintenance, inspection and repair. This paper presents a probabilistic assessment methodology for in-service pressure piping containing defects, which is especially designed for programming. It is based on three assessment codes, BS 7910, R6 and SAPV-99, considering uncertainties in operating loadings, flaw sizes, material fracture toughness and flow stress. A general sampling computation method of stress intensity factor (SIF), in the form of the relationship between SIF and axial force and bending moment and torsion, is adopted. This relationship has been successfully used in developing software, Safety Assessment System of In-service Pressure Piping Containing Flaws (SAPP-2003), to assess planar and non-planar flaws. A numerical example is presented to illustrate the application of SAPP-2003 for calculating the failure probabilities of separate defects and for the assessed pressure piping

  4. Low Power and High Sensitivity MOSFET-Based Pressure Sensor

    International Nuclear Information System (INIS)

    Zhang Zhao-Hua; Ren Tian-Ling; Zhang Yan-Hong; Han Rui-Rui; Liu Li-Tian

    2012-01-01

    Based on the metal-oxide-semiconductor field effect transistor (MOSFET) stress sensitive phenomenon, a low power MOSFET pressure sensor is proposed. Compared with the traditional piezoresistive pressure sensor, the present pressure sensor displays high performances on sensitivity and power consumption. The sensitivity of the MOSFET sensor is raised by 87%, meanwhile the power consumption is decreased by 20%. (cross-disciplinary physics and related areas of science and technology)

  5. Modeling the planar configuration of extraordinary magnetoresistance

    International Nuclear Information System (INIS)

    El-Ahmar, S; Pozniak, A A

    2015-01-01

    Recently the planar version of the extraordinary magnetoresistance (EMR) magnetic field sensor has been constructed and verified in practice. Planar configuration of the EMR device gives many technological advantages, it is simpler than the classic and allows one to build the sensor using electric materials of the new type (such as graphene or topological insulators) much easier. In this work the planar configuration of the EMR sensor is investigated by performing computational simulations using the finite element method (FEM). The computational comparison of the planar and classic configurations of EMR is presented using three-dimensional models. Various variants of the geometry of EMR sensor components are pondered and compared in the planar and classic version. Size of the metal overlap is considered for sensor optimization as well as various semiconductor-metal contact resistance dependences of the EMR signal. Based on computational simulations, a method for optimal placement of electric terminals in a planar EMR device is proposed. (paper)

  6. Contracting a planar graph efficiently

    DEFF Research Database (Denmark)

    Holm, Jacob; Italiano, Giuseppe F.; Karczmarz, Adam

    2017-01-01

    the data structure, we can achieve optimal running times for decremental bridge detection, 2-edge connectivity, maximal 3-edge connected components, and the problem of finding a unique perfect matching for a static planar graph. Furthermore, we improve the running times of algorithms for several planar...

  7. Development of Nb$_3$Sn coatings by magnetron sputtering for SRF cavities

    CERN Document Server

    Rosaz, G.; Leaux, F.; Motschmann, F.; Mydlarz, Z.; Taborelli, M.; Vollenberg, W.

    2016-01-01

    Cost and energy savings are an integral requirement in the design of future particle accelerators. Very low losses SRF accelerating systems, together with high-efficiency cryogenics systems, have the potential of low running costs. The association to the capital cost reduction allowed by thin films coated copper cavities may represent the best overall cost-performance compromise. This strategy has been applied for instance in LEP, the LHC and HIE-ISOLDE with the niobium thin films technology. New materials must be considered to improve the quality factor of the cavities, such as Nb$_{3}$Sn, which could also ideally operate at higher temperature thus allowing further energy savings. The study considers the possibility to coat a copper resonator with an Nb$_{3}$Sn layer by means of magnetron sputtering using an alloyed target. We present the impact of the process parameters on the as-deposited layer stoichiometry. The latter is in good agreement with previous results reported in the literature and can be tuned ...

  8. Magnetron based high energy S-band linac system

    International Nuclear Information System (INIS)

    Tiwari, T.; Krishnan, R.; Phatangare, Manoj

    2012-01-01

    This paper deals with the study of magnetron based high energy S-band linear accelerator (linac) system operating at spot frequency 2.998 GHz. The energy and dose are two important parameters of linac system which depend on input power of microwave source and length of linac tube. Here the author has studied how these parameters can be improved for side coupled standing wave S-band linac system

  9. Unipolar resistive switching in planar Pt/BiFeO3/Pt structure

    Directory of Open Access Journals (Sweden)

    Rajesh K. Katiyar

    2015-03-01

    Full Text Available We report unipolar resistive switching suitable for nonvolatile memory applications in polycrystalline BiFeO3 thin films in planar electrode configuration with non-overlapping Set and Reset voltages, On/Off resistance ratio of ∼104 and good data retention (verified for up to 3,000 s. We have also observed photovoltaic response in both high and low resistance states, where the photocurrent density was about three orders of magnitude higher in the low resistance state as compared to the high resistance state at an illumination power density of ∼100 mW/cm2. Resistive switching mechanisms in both resistance states of the planar device can be explained by using the conduction filament (thermo-chemical model.

  10. Hetero-epitaxial growth of TiC films on MgO(001) at 100 °C by DC reactive magnetron sputtering

    International Nuclear Information System (INIS)

    Braic, M.; Zoita, N.C.; Danila, M.; Grigorescu, C.E.A.; Logofatu, C.

    2015-01-01

    Hetero-epitaxial TiC thin films were deposited at 100 °C on MgO(001) by DC reactive magnetron sputtering in a mixture of Ar and CH 4 . The 62 nm thick films were analyzed for elemental composition and chemical bonding by Auger electron spectroscopy, X-ray photoelectron spectroscopy and micro-Raman spectroscopy. The crystallographic structure investigation by high resolution X-ray diffraction revealed that the films consist of two layers: an interface partially strained epilayer with high crystalline quality, and a relaxed layer, formed by columnar grains, maintaining the epitaxial relationship with the substrate. The films presented smooth surfaces (RMS roughness ~ 0.55 nm), with circular equi-sized grains/crystallites, as observed by atomic force microscopy. The Hall measurements in Van der Pauw geometry revealed relatively high resistivity value ~ 620 μΩ cm, ascribed to electron scattering on interfaces, on grain boundaries and on different defects/dislocations. - Highlights: • Hetero-epitaxial TiC 0.84 thin films were grown on MgO(001) at 100 °C by magnetron sputtering. • 62 nm thick films were synthesized by magnetron sputtering, using Ti, Ar and CH 4 . • The film comprises a partially strained interface epilayer and a relaxed top layer. • Both layers preserve the epitaxial relationship with the substrate. • Low RMS surface roughness ~ 0.55 nm and grains with mean lateral size of ~ 38.5 nm were observed

  11. Hetero-epitaxial growth of TiC films on MgO(001) at 100 °C by DC reactive magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Braic, M. [National Institute for Optoelectronics, 409 Atomistilor St., 077125 Magurele (Romania); Zoita, N.C., E-mail: cnzoita@inoe.ro [National Institute for Optoelectronics, 409 Atomistilor St., 077125 Magurele (Romania); Danila, M. [National Institute for Research and Development in Microtechnology, 126A Erou Iancu Nicolae Blvd., 077190 Bucharest (Romania); Grigorescu, C.E.A. [National Institute for Optoelectronics, 409 Atomistilor St., 077125 Magurele (Romania); Logofatu, C. [National Institute of Materials Physics, 105 bis Atomistilor St., 077125 Magurele (Romania)

    2015-08-31

    Hetero-epitaxial TiC thin films were deposited at 100 °C on MgO(001) by DC reactive magnetron sputtering in a mixture of Ar and CH{sub 4}. The 62 nm thick films were analyzed for elemental composition and chemical bonding by Auger electron spectroscopy, X-ray photoelectron spectroscopy and micro-Raman spectroscopy. The crystallographic structure investigation by high resolution X-ray diffraction revealed that the films consist of two layers: an interface partially strained epilayer with high crystalline quality, and a relaxed layer, formed by columnar grains, maintaining the epitaxial relationship with the substrate. The films presented smooth surfaces (RMS roughness ~ 0.55 nm), with circular equi-sized grains/crystallites, as observed by atomic force microscopy. The Hall measurements in Van der Pauw geometry revealed relatively high resistivity value ~ 620 μΩ cm, ascribed to electron scattering on interfaces, on grain boundaries and on different defects/dislocations. - Highlights: • Hetero-epitaxial TiC{sub 0.84} thin films were grown on MgO(001) at 100 °C by magnetron sputtering. • 62 nm thick films were synthesized by magnetron sputtering, using Ti, Ar and CH{sub 4}. • The film comprises a partially strained interface epilayer and a relaxed top layer. • Both layers preserve the epitaxial relationship with the substrate. • Low RMS surface roughness ~ 0.55 nm and grains with mean lateral size of ~ 38.5 nm were observed.

  12. Large area atmospheric-pressure plasma jet

    Science.gov (United States)

    Selwyn, Gary S.; Henins, Ivars; Babayan, Steve E.; Hicks, Robert F.

    2001-01-01

    Large area atmospheric-pressure plasma jet. A plasma discharge that can be operated at atmospheric pressure and near room temperature using 13.56 MHz rf power is described. Unlike plasma torches, the discharge produces a gas-phase effluent no hotter than 250.degree. C. at an applied power of about 300 W, and shows distinct non-thermal characteristics. In the simplest design, two planar, parallel electrodes are employed to generate a plasma in the volume therebetween. A "jet" of long-lived metastable and reactive species that are capable of rapidly cleaning or etching metals and other materials is generated which extends up to 8 in. beyond the open end of the electrodes. Films and coatings may also be removed by these species. Arcing is prevented in the apparatus by using gas mixtures containing He, which limits ionization, by using high flow velocities, and by properly spacing the rf-powered electrode. Because of the atmospheric pressure operation, there is a negligible density of ions surviving for a sufficiently long distance beyond the active plasma discharge to bombard a workpiece, unlike the situation for low-pressure plasma sources and conventional plasma processing methods.

  13. Magnetic pressure effects in a plasma-liner interface

    Science.gov (United States)

    García-Rubio, F.; Sanz, J.

    2018-04-01

    A theoretical analysis of magnetic pressure effects in a magnetized liner inertial fusion-like plasma is presented. In previous publications [F. García-Rubio and J. Sanz, Phys. Plasmas 24, 072710 (2017)], the evolution of a hot magnetized plasma in contact with a cold unmagnetized plasma, aiming to represent the hot spot and liner, respectively, was investigated in planar geometry. The analysis was made in a double limit low Mach and high thermal to magnetic pressure ratio β. In this paper, the analysis is extended to an arbitrary pressure ratio. Nernst, Ettingshausen, and Joule effects come into play in the energy balance. The region close to the liner is governed by thermal conduction, while the Joule dissipation becomes predominant far from it when the pressure ratio is low. Mass ablation, thermal energy, and magnetic flux losses are reduced with plasma magnetization, characterized by the electron Hall parameter ω e τ e , until β values of order unity are reached. From this point forward, increasing the electron Hall parameter no longer improves the magnetic flux conservation, and mass ablation is enhanced due to the magnetic pressure gradients. A thoughtful simplification of the problem that allows to reduce the order of the system of governing equations while still retaining the finite β effects is presented and compared to the exact case.

  14. Low Pressure Circuit Control and adjust System Test

    International Nuclear Information System (INIS)

    Rubio, R.O; Brendstrup, C.J; Ocampo, A.C

    2000-01-01

    The hydraulic mechanism (MSAC) is a system that will be employed in the movement of the control rods of the CAREM-25 reactor.In this report, the experimental work on a prototype of MSAC in a low pressure circuit is presented: also the methodology and conclusions.Basic thermalhydraulic data from the MSAC was obtained, and the most relevant control parameters were determined.The response of the mechanism to changes in the control parameters was also evaluated. In conclusion, the response of the MSAC fulfills the aspects of reliability and repetitive movement with water flow pulses control, in the low pressure circuit at the Laboratorio de Mecanica, Materiales y Mediciones of INVAP S.E

  15. TUNABLE MAGNETIC AND ELECTRICAL PROPERTIES OF Co-DOPED ZnO FILMS BY VARYING OXYGEN PARTIAL PRESSURE

    OpenAIRE

    L. G. WANG; H. W. ZHANG; X. L. TANG; Y. X. LI; Z. Y. ZHONG

    2011-01-01

    High quality Co-doped ZnO films with good reproducibility have been prepared under different oxygen partial pressure by radio-frequency magnetron sputtering. These films were characterized using numerous characterization techniques including X-ray diffraction, electrical transport, and magnetization measurements. The effect of oxygen partial pressure on the structural, magnetic, and electrical properties of Co-doped ZnO films has been systematically studied. It was found that the structural, ...

  16. Additive manufactured Ti6Al4V scaffolds with the RF- magnetron sputter deposited hydroxyapatite coating

    International Nuclear Information System (INIS)

    Chudinova, E; Surmeneva, M; Surmenev, R; Koptioug, A; Scoglund, P

    2016-01-01

    Present paper reports on the results of surface modification of the additively manufactured porous Ti6Al4V scaffolds. Radio frequency (RF) magnetron sputtering was used to modify the surface of the alloy via deposition of the biocompatible hydroxyapatite (HA) coating. The surface morphology, chemical and phase composition of the HA-coated alloy were studied. It was revealed that RF magnetron sputtering allows preparing a homogeneous HA coating onto the entire surface of scaffolds. (paper)

  17. Piecewise planar Möbius bands

    DEFF Research Database (Denmark)

    Gravesen, Jens

    2005-01-01

    t is shown that a closed polygon with an odd number of vertices is the median of exactly one piecewise planar cylinder and one piecewise planar Möbius band, intersecting each other orthogonally. A closed polygon with an even number of vertices is in the generic case neither the median...

  18. The ATLAS Planar Pixel Sensor R and D project

    International Nuclear Information System (INIS)

    Beimforde, M.

    2011-01-01

    Within the R and D project on Planar Pixel Sensor Technology for the ATLAS inner detector upgrade, the use of planar pixel sensors for highest fluences as well as large area silicon detectors is investigated. The main research goals are optimizing the signal size after irradiations, reducing the inactive sensor edges, adjusting the readout electronics to the radiation induced decrease of the signal sizes, and reducing the production costs. Planar n-in-p sensors have been irradiated with neutrons and protons up to fluences of 2x10 16 n eq /cm 2 and 1x10 16 n eq /cm 2 , respectively, to study the collected charge as a function of the irradiation dose received. Furthermore comparisons of irradiated standard 300μm and thin 140μm sensors will be presented showing an increase of signal sizes after irradiation in thin sensors. Tuning studies of the present ATLAS front end electronics show possibilities to decrease the discriminator threshold of the present FE-I3 read out chips to less than 1500 electrons. In the present pixel detector upgrade scenarios a flat stave design for the innermost layers requires reduced inactive areas at the sensor edges to ensure low geometric inefficiencies. Investigations towards achieving slim edges presented here show possibilities to reduce the width of the inactive area to less than 500μm. Furthermore, a brief overview of present simulation activities within the Planar Pixel R and D project is given.

  19. Influence of coating steps of perovskite on low-temperature amorphous compact TiO x upon the morphology, crystallinity, and photovoltaic property correlation in planar perovskite solar cells

    Science.gov (United States)

    Shahiduzzaman, Md.; Furumoto, Yoshikazu; Yamamoto, Kohei; Yonezawa, Kyosuke; Azuma, Yosuke; Kitamura, Michinori; Matsuzaki, Hiroyuki; Karakawa, Makoto; Kuwabara, Takayuki; Takahashi, Kohshin; Taima, Tetsuya

    2018-03-01

    The fabrication of high-efficiency solution-processable perovskite solar cells has been achieved using mesostructured films and compact titanium dioxide (TiO2) layers in a process that involves high temperatures and cost. Here, we present an efficient approach for fabricating chemical-bath-deposited, low-temperature, and low-cost amorphous compact TiO x -based planar heterojunction perovskite solar cells by one-step and two-step coatings of the perovskite layer. We also investigate the effect of the number of perovskite coating steps on the compact TiO x layer. The grazing incidence wide-angle X-ray scattering technique is used to clarify the relationship between morphology, crystallinity, and photovoltaic properties of the resulting devices. Analysis of the films revealed that one-step spin-coating of perovskite exhibited an enhancement of film quality and crystallization that correlates to photovoltaic performance 1.5 times higher than that of a two-step-coated device. Our findings show that the resulting morphology, crystallinity, and device performances are strongly dependent on the number of coating steps of the perovskite thin layer on the compact TiO x layer. This result is useful knowledge for the low-cost production of planar perovskite solar cells.

  20. Numerical investigation of heat transfer characteristic of fixed planar elastic tube bundles

    International Nuclear Information System (INIS)

    Duan, Derong; Ge, Peiqi; Bi, Wenbo

    2015-01-01

    Highlights: • Both tube-side and shell-side of planar elastic tube bundles were investigated. • Heat transfer and fluid flow were studied from the local analysis perspective. • Secondary flow varies depending on the fluid flow state and the geometry of tube. • Curvature plays a role on the external flow field. • The heat transfer of the two intermediate tube bundles is augmented. - Abstract: Planar elastic tube bundles are a novel approach to enhance heat transfer by using flow-induced vibration. This paper studied the heat transfer characteristic and fluid flow in both tube-side and shell-side using numerical simulation. Two temperature difference formulas were used to calculate convective heat transfer coefficient and the results were verified by theoretical analysis and experimental correlations. The effect of Reynolds number on overall convective heat transfer coefficient and pressure drop in tube-side and shell-side were studied. The comparison of the secondary flow in planar elastic tube bundles and conical spiral tube bundles were conducted. The external flow field and local convective heat transfer around the periphery of fixed planar elastic tube bundles subjected to the cross fluid flow were also analyzed. The results show that the energy consumption efficiency should be taken into account in the forced heat transfer process conducted by adjusting the fluid flow. The secondary flow varies depending on the fluid flow state and the geometry of tube. Hence, it is deduced that the heat transfer enhancement is obtained because the thermal boundary layer in the deformed planar elastic tube bundles caused by flow-induced vibration is damaged by the disordered secondary flow. In addition, the convective heat transfer capability of outside the two intermediate tube bundles is enhanced because of the effect of irregular and complex fluid flow affected by the role of curved tubes on both sides

  1. Planar microlens with front-face angle: design, fabrication, and characterization

    KAUST Repository

    Hafiz, Md Abdullah Al

    2016-07-08

    This paper studies the effect of microlens front-face angle on the performance of an optical system consisting of a planar-graded refractive index (GRIN) lens pair facing each other separated by a free-space region. The planar silica microlens pairs are designed to facilitate low-loss optical signal propagation in the free-space region between the opposing optical waveguides. The planar lens is fabricated from a 38-μm-thick fluorine-doped silica layer on a silicon substrate. It has a parabolic refractive index profile in the vertical direction, which is achieved by controlled fluorine incorporation in the silica film to collimate the optical beam in the vertical direction. Horizontal beam collimation is achieved by incorporating a horizontal curvature at the front face of the lens defined by deep oxide etch. A generalized 3×3ABCDGH transformation matrix method has been derived to compute the coupling efficiency of such microlens pairs to take front-face angles that may be present due to fabrication variations or limitations and possible input/output optical fiber offset/tilt into considerations. Pairs of such planar GRIN lens with various free-space propagation distances between them ranging from 75 to 2500  μm and with front-face angles of 1.5 deg, 2 deg, and 4 deg have been fabricated and characterized. Beam propagation method simulations have been carried out to substantiate the theoretical and experimental results. The results indicate that the optical loss is reasonably low up to 1.5 deg of front-face angles and increases significantly with further increase in the front-face angle. Analysis shows that for a given system with specific microlens front-face angle, the optical loss can be significantly reduced by properly compensating the vertical position of the input and output fibers.

  2. Planar microlens with front-face angle: design, fabrication, and characterization

    Science.gov (United States)

    Al Hafiz, Md. Abdullah; Michael, Aron; Kwok, Chee-Yee

    2016-07-01

    This paper studies the effect of microlens front-face angle on the performance of an optical system consisting of a planar-graded refractive index (GRIN) lens pair facing each other separated by a free-space region. The planar silica microlens pairs are designed to facilitate low-loss optical signal propagation in the free-space region between the opposing optical waveguides. The planar lens is fabricated from a 38-μm-thick fluorine-doped silica layer on a silicon substrate. It has a parabolic refractive index profile in the vertical direction, which is achieved by controlled fluorine incorporation in the silica film to collimate the optical beam in the vertical direction. Horizontal beam collimation is achieved by incorporating a horizontal curvature at the front face of the lens defined by deep oxide etch. A generalized 3×3 ABCDGH transformation matrix method has been derived to compute the coupling efficiency of such microlens pairs to take front-face angles that may be present due to fabrication variations or limitations and possible input/output optical fiber offset/tilt into considerations. Pairs of such planar GRIN lens with various free-space propagation distances between them ranging from 75 to 2500 μm and with front-face angles of 1.5 deg, 2 deg, and 4 deg have been fabricated and characterized. Beam propagation method simulations have been carried out to substantiate the theoretical and experimental results. The results indicate that the optical loss is reasonably low up to 1.5 deg of front-face angles and increases significantly with further increase in the front-face angle. Analysis shows that for a given system with specific microlens front-face angle, the optical loss can be significantly reduced by properly compensating the vertical position of the input and output fibers.

  3. Planar microlens with front-face angle: design, fabrication, and characterization

    KAUST Repository

    Hafiz, Md Abdullah Al; Michael, Aron; Kwok, Chee-Yee

    2016-01-01

    This paper studies the effect of microlens front-face angle on the performance of an optical system consisting of a planar-graded refractive index (GRIN) lens pair facing each other separated by a free-space region. The planar silica microlens pairs are designed to facilitate low-loss optical signal propagation in the free-space region between the opposing optical waveguides. The planar lens is fabricated from a 38-μm-thick fluorine-doped silica layer on a silicon substrate. It has a parabolic refractive index profile in the vertical direction, which is achieved by controlled fluorine incorporation in the silica film to collimate the optical beam in the vertical direction. Horizontal beam collimation is achieved by incorporating a horizontal curvature at the front face of the lens defined by deep oxide etch. A generalized 3×3ABCDGH transformation matrix method has been derived to compute the coupling efficiency of such microlens pairs to take front-face angles that may be present due to fabrication variations or limitations and possible input/output optical fiber offset/tilt into considerations. Pairs of such planar GRIN lens with various free-space propagation distances between them ranging from 75 to 2500  μm and with front-face angles of 1.5 deg, 2 deg, and 4 deg have been fabricated and characterized. Beam propagation method simulations have been carried out to substantiate the theoretical and experimental results. The results indicate that the optical loss is reasonably low up to 1.5 deg of front-face angles and increases significantly with further increase in the front-face angle. Analysis shows that for a given system with specific microlens front-face angle, the optical loss can be significantly reduced by properly compensating the vertical position of the input and output fibers.

  4. Deposition and characterization of TaAIN thin films by reactive magnetron sputtering; Deposicao e caracterizacao de filmes finos de TaAIN depositados por magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Oliveira, G.B.; Fernandez, D.R.; Fontes Junior, A.S.; Felix, L.C.; Tentardini, E.K. [Universidade Federal de Sergipe (UFS), Sao Cristovao, SE (Brazil). Departamento de Ciencia e Engenharia de Materiais; Hubler, R. [Pontificia Universidade Catolica do Rio Grande do Sul (PUC-RS), RS (Brazil); Silva Junior, A.H. da, E-mail: brito-g@hotmail.com [Universidade Federal do Rio Grande do Sul (UFRGS), RS (Brazil)

    2016-07-01

    Phase stability, oxidation resistance and great mechanical properties are the main objectives when synthesizing protective coatings. The tantalum nitride (TaN) has aroused interest because of its high temperature stability, chemical inertness and thermal conductivity. However, it has a low hardness value when compared to other coatings. Researches has shown that one way to improvements in the properties of a thin film is by adding other elements in the deposition process. Therefore, the objective of this study was to deposit thin films of TaAlN by magnetron sputtering, changing the aluminum concentration of 2, 5, 7, to 14%. Then the coatings were characterized by EDS, RBS, GIXRD and nanohardness. In this study was found that the aluminum deposited did not change the oxidation resistance of the coating, and the highest value of hardness was 28 GPa for the sample with 14 at.%. (author)

  5. Sliding mode control of a "Soft" 2-DOF Planar Pneumatic Manipulator

    Science.gov (United States)

    Van Damme, M.; Vanderborght, B.; Beyl, P.; Versluys, R.; Vanderniepen, I.; Van Ham, R.; Cherelle, P.; Daerden, F.; Lefeber, D.

    2008-10-01

    This paper presents a sliding mode controller for a "Soft" 2-DOF Planar Pneumatic Manipulator actuated by pleated pneumatic artificial muscle actuators. Since actuator dynamics is not negligible, an approximate model for pressure dynamics was taken into account, which made it necessary to perform full input-output feedback linearization in order to design a sliding mode controller. The design of the controller is presented in detail, and experimental results obtained by implementing the controller are discussed

  6. High pressure apparatus for neutron scattering at low temperature

    International Nuclear Information System (INIS)

    Munakata, Koji; Uwatoko, Yoshiya; Aso, Naofumi

    2010-01-01

    Effects of pressure on the physical properties are very important for understanding highly correlated electron systems, in which pressure-induced attractive phenomena such as superconductivity and magnetically ordered non-Fermi liquid have been observed. Up to now, many scientists have developed a lot of high pressure apparatus for each purpose. The characteristic features of various materials and pressure transmitting media for use of high pressure apparatus are reported. Then, two kinds of clamp type high-pressure cell designed for low-temperature neutron diffraction measurements are shown; one is a piston cylinder type high-pressure cell which can be attached to the dilution refrigerator, and the other one is a newly-developed cubic anvil type high-pressure cell which can generate pressure above 7GPa. We also introduce the results of magnetic neutron scattering under pressure on a pressure-induced superconducting ferromagnet UGe 2 in use of the piston cylinder type clamp cell, and those on an iron arsenide superconductor SrFe 2 As 2 in use of the cubic anvil type clamp cell. (author)

  7. Blue Diode Laser Absorption Spectroscopy of Pulsed Magnetron Discharge

    Czech Academy of Sciences Publication Activity Database

    Olejníček, Jiří; Do, H.T.; Hubička, Zdeněk; Hippler, R.; Jastrabík, Lubomír

    2006-01-01

    Roč. 45, 10B (2006), s. 8090-8094 ISSN 0021-4922 R&D Projects: GA AV ČR 1QS100100563; GA ČR GA202/05/2242 Institutional research plan: CEZ:AV0Z10100521; CEZ:AV0Z10100520 Keywords : laser absorption spectroscopy * pulsed magnetron * sputtering parameters Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.222, year: 2006

  8. Improved Dynamic Planar Point Location

    DEFF Research Database (Denmark)

    Brodal, Gerth Stølting; Arge, Lars; Georgiadis, Loukas

    2006-01-01

    We develop the first linear-space data structures for dynamic planar point location in general subdivisions that achieve logarithmic query time and poly-logarithmic update time.......We develop the first linear-space data structures for dynamic planar point location in general subdivisions that achieve logarithmic query time and poly-logarithmic update time....

  9. Hydrogen discharges operating at atmospheric pressure in a semiconductor gas discharge system

    Energy Technology Data Exchange (ETDEWEB)

    Aktas, K; Acar, S; Salamov, B G [Physics Department, Faculty of Arts and Sciences, Gazi University, 06500 Ankara (Turkey)

    2011-08-15

    Analyses of physical processes which initiate electrical breakdown and spatial stabilization of current and control it with a photosensitive cathode in a semiconductor gas discharge system (SGDS) are carried out in a wide pressure range up to atmospheric pressure p, interelectrode distance d and diameter D of the electrode areas of the semiconductor cathode. The study compares the breakdown and stability curves of the gas discharge in the planar SGDS where the discharge gap is filled with hydrogen and air in two cases. The impact of the ionizing component of the discharge plasma on the control of the stable operation of the planar SGDS is also investigated at atmospheric pressure. The loss of stability is primarily due to modification of the semiconductor-cathode properties on the interaction with low-energy hydrogen ions and the formation of a space charge of positive ions in the discharge gap which changes the discharge from Townsend to glow type. The experimental results show that the discharge current in H{sub 2} is more stable than in air. The breakdown voltages are measured for H{sub 2} and air with parallel-plane electrodes, for pressures between 28 and 760 Torr. The effective secondary electron emission (SEE) coefficient is then determined from the breakdown voltage results and compared with the experimental results. The influence of the SEE coefficient is stated in terms of the differences between the experimental breakdown law.

  10. Planar impact experiments for EOS measurements

    International Nuclear Information System (INIS)

    Furnish, M.D.

    1993-01-01

    The community concerned with the numerical modeling of groundshock produced by underground nuclear tests must have access to materials data to benchmark models of rock behavior. Historically the primary source of these data has been planar impact experiments. These experiments have involved gun, explosive and electrical launchers. Other methods of introducing planar shocks include shock driving by in-contact explosives or laser bursts. This paper briefly describes gun launcher-based planar impact methods used to characterize geological materials at Sandia National Laboratories

  11. Planar-Structure Perovskite Solar Cells with Efficiency beyond 21.

    Science.gov (United States)

    Jiang, Qi; Chu, Zema; Wang, Pengyang; Yang, Xiaolei; Liu, Heng; Wang, Ye; Yin, Zhigang; Wu, Jinliang; Zhang, Xingwang; You, Jingbi

    2017-12-01

    Low temperature solution processed planar-structure perovskite solar cells gain great attention recently, while their power conversions are still lower than that of high temperature mesoporous counterpart. Previous reports are mainly focused on perovskite morphology control and interface engineering to improve performance. Here, this study systematically investigates the effect of precise stoichiometry, especially the PbI 2 contents on device performance including efficiency, hysteresis and stability. This study finds that a moderate residual of PbI 2 can deliver stable and high efficiency of solar cells without hysteresis, while too much residual PbI 2 will lead to serious hysteresis and poor transit stability. Solar cells with the efficiencies of 21.6% in small size (0.0737 cm 2 ) and 20.1% in large size (1 cm 2 ) with moderate residual PbI 2 in perovskite layer are obtained. The certificated efficiency for small size shows the efficiency of 20.9%, which is the highest efficiency ever recorded in planar-structure perovskite solar cells, showing the planar-structure perovskite solar cells are very promising. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Instantaneous planar pressure determination from particle image velocimetry

    NARCIS (Netherlands)

    De Kat, R.

    2012-01-01

    Forces on flapping or rotating wings, like flapping wings of micro air vehicles or blades of wind turbines are of great interest to engineers. To investigate the ways birds and insects fly, forces created by flapping wings are of importance to biologists. The pressure field, combined with the

  13. Cathode cooling systems for the magnetron and Penning H- sources: a progress report of work at Brookhaven National Laboratory

    International Nuclear Information System (INIS)

    McKenzie-Wilson, R.B.

    1977-01-01

    The magnetron/Penning H - sources being developed at Brookhaven National Laboratory have produced ion currents up to 1 A with pulse lengths of 10 ms. The pulse length is limited by heating of the cathode surface. Cathode thermal conditions were investigated and lead to the conclusion that a cathode cooling system must be capable of handling 3 kW cm -2 of heated cathode surface. A review of cooling fluid requirements coupled with an examination of possible cooling fluids, leads to the conclusion that demineralized water is a suitable cooling fluid when used under pressurized nucleated boiling conditions. A correlation is used to show that heat-flux of 1.25 kW cm -2 could be removed using current technology and that this heat flux may be extended to 3 kW cm -2 by use of the Hyper-Vapotron effect. The temperature of the working surface of the cathode may be varied over a small temperature range by varying the system pressure during operation

  14. Evolution of a Planar Wake in Adverse Pressure Gradient

    Science.gov (United States)

    Driver, David M.; Mateer, George G.

    2016-01-01

    In the interest of improving the predictability of high-lift systems at maximum lift conditions, a series of fundamental experiments were conducted to study the effects of adverse pressure gradient on a wake flow. Mean and fluctuating velocities were measured with a two-component laser-Doppler velocimeter. Data were obtained for several cases of adverse pressure gradient, producing flows ranging from no reversed flow to massively reversed flow. While the turbulent Reynolds stresses increase with increasing size of the reversed flow region, the gradient of Reynolds stress does not. Computations using various turbulence models were unable to reproduce the reversed flow.

  15. Bonding and bio-properties of hybrid laser/magnetron Cr-enriched DLC layers

    Energy Technology Data Exchange (ETDEWEB)

    Jelinek, Miroslav, E-mail: jelinek@fzu.cz [Institute of Physics, Academy of Sciences of the Czech Republic, v.v.i, Na Slovance 2, 18221 Prague (Czech Republic); Czech Technical University in Prague, Faculty of Biomedical Engineering, nam. Sitna 3105, 27201 Kladno (Czech Republic); Zemek, Josef [Institute of Physics, Academy of Sciences of the Czech Republic, v.v.i, Na Slovance 2, 18221 Prague (Czech Republic); Vandrovcová, Marta; Bačáková, Lucie [Institute of Physiology of the Czech Academy of Sciences of the Czech Republic, v.v.i., Videnska 1083, 14220 Prague 4 (Czech Republic); Kocourek, Tomáš; Remsa, Jan; Písařík, Petr [Institute of Physics, Academy of Sciences of the Czech Republic, v.v.i, Na Slovance 2, 18221 Prague (Czech Republic); Czech Technical University in Prague, Faculty of Biomedical Engineering, nam. Sitna 3105, 27201 Kladno (Czech Republic)

    2016-01-01

    Chromium-enriched diamond-like carbon (DLC) layers were prepared by a hybrid technology using a combination of pulsed laser deposition (PLD) and magnetron sputtering. XRD revealed no chromium peaks, indicating that the layers are mostly amorphous. Carbon (sp{sup 2} and sp{sup 3} bonds) and chromium bonds were determined by XPS from C 1s, O 1s, and Cr 2p photoelectron peaks. Depending on the deposition conditions, the concentration of Cr in DLC layers moved from zero to 10 at.% for as-received sample surfaces, and to about 31 at.% after mild sputter-cleaning by argon ion cluster beam. It should be noted that the most stable Cr{sup 3+} bonding state is in Cr{sub 2}O{sub 3} and Cr(OH){sub 3}, and that there is the toxic Cr{sup 6+} state in CrO{sub 3}. The surface content of hexavalent chromium in the Cr 2p3/2 spectra is rather low, but discernible. The population density of Saos-2 cells was the highest in samples containing higher concentrations of chromium 7.7 and 10 at.%. This means that higher concentrations of chromium supported the cell adhesion and proliferation. In addition, as revealed by a LIVE/DEAD viability/cytotoxicity kit, the cells on all Cr-containing samples maintained high viability (96 to 99%) on days 1 and 3 after seeding. However, this seemingly positive cell behavior could be associated with the risk of dedifferentiation and oncogenic transformation of cells. - Highlights: • DLC and chromium-enriched DLC layers were prepared by hybrid laser–magnetron deposition. • The content of chromium in DLC varied up to 10 at.% (31 at.% after ion beam sputtering). • The surface content of toxic hexavalent chromium in the Cr 2p3/2 spectra is rather low but discernible. • Higher concentrations of chromium supported the cell adhesion and proliferation. • Cells on all Cr-containing samples maintained high viability (96 to 99%).

  16. Low Complexity Beampattern Design in MIMO Radars Using Planar Array

    KAUST Repository

    Bouchoucha, Taha

    2015-01-07

    In multiple-input multiple-output radar systems, it is usually desirable to steer transmitted power in the region-of-interest. To do this, conventional methods optimize the waveform covariance matrix, R, for the desired beampattern, which is then used to generate actual transmitted waveforms. Both steps require constrained optimization, therefore, use iterative and expensive algorithms. In this paper, we provide a closed-form solution to design covariance matrix for the given beampattern using the planar array, which is then used to derive a novel closed-form algorithm to directly design the finite-alphabet constant-envelope (FACE) waveforms. The proposed algorithm exploits the two-dimensional fast-Fourier-transform. The performance of our proposed algorithm is compared with existing methods that are based on semi-definite quadratic programming with the advantage of a considerably reduced complexity.

  17. Contact planarization of ensemble nanowires

    Science.gov (United States)

    Chia, A. C. E.; LaPierre, R. R.

    2011-06-01

    The viability of four organic polymers (S1808, SC200, SU8 and Cyclotene) as filling materials to achieve planarization of ensemble nanowire arrays is reported. Analysis of the porosity, surface roughness and thermal stability of each filling material was performed. Sonication was used as an effective method to remove the tops of the nanowires (NWs) to achieve complete planarization. Ensemble nanowire devices were fully fabricated and I-V measurements confirmed that Cyclotene effectively planarizes the NWs while still serving the role as an insulating layer between the top and bottom contacts. These processes and analysis can be easily implemented into future characterization and fabrication of ensemble NWs for optoelectronic device applications.

  18. A hybrid electron cyclotron resonance metal ion source with integrated sputter magnetron for the production of an intense Al{sup +} ion beam

    Energy Technology Data Exchange (ETDEWEB)

    Weichsel, T., E-mail: tim.weichsel@fep.fraunhofer.de; Hartung, U.; Kopte, T. [Fraunhofer Institute for Organic Electronics, Electron Beam and Plasma Technology FEP, 01277 Dresden (Germany); Zschornack, G. [Institute of Solid State Physics, Dresden University of Technology, 01062 Dresden, Germany and Helmholtz-Zentrum Dresden-Rossendorf e.V., Institute of Ion Beam Physics and Materials Research, Dresden (Germany); Kreller, M.; Philipp, A. [DREEBIT GmbH, 01900 Grossroehrsdorf (Germany)

    2015-09-15

    A metal ion source prototype has been developed: a combination of magnetron sputter technology with 2.45 GHz electron cyclotron resonance (ECR) ion source technology—a so called magnetron ECR ion source (MECRIS). An integrated ring-shaped sputter magnetron with an Al target is acting as a powerful metal atom supply in order to produce an intense current of singly charged metal ions. Preliminary experiments show that an Al{sup +} ion current with a density of 167 μA/cm{sup 2} is extracted from the source at an acceleration voltage of 27 kV. Spatially resolved double Langmuir probe measurements and optical emission spectroscopy were used to study the plasma states of the ion source: sputter magnetron, ECR, and MECRIS plasma. Electron density and temperature as well as Al atom density were determined as a function of microwave and sputter magnetron power. The effect of ECR heating is strongly pronounced in the center of the source. There the electron density is increased by one order of magnitude from 6 × 10{sup 9} cm{sup −3} to 6 × 10{sup 10} cm{sup −3} and the electron temperature is enhanced from about 5 eV to 12 eV, when the ECR plasma is ignited to the magnetron plasma. Operating the magnetron at constant power, it was observed that its discharge current is raised from 1.8 A to 4.8 A, when the ECR discharge was superimposed with a microwave power of 2 kW. At the same time, the discharge voltage decreased from about 560 V to 210 V, clearly indicating a higher plasma density of the MECRIS mode. The optical emission spectrum of the MECRIS plasma is dominated by lines of excited Al atoms and shows a significant contribution of lines arising from singly ionized Al. Plasma emission photography with a CCD camera was used to prove probe measurements and to identify separated plasma emission zones originating from the ECR and magnetron discharge.

  19. On the synthesis of a compound with positive enthalpy of formation: Zinc-blende-like RuN thin films obtained by rf-magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Cattaruzza, E., E-mail: cattaruz@unive.it [Department of Molecular Sciences and Nanosystems, Ca’ Foscari University of Venice, Via Torino 155/B, 30172 Mestre-VE (Italy); Battaglin, G.; Riello, P. [Department of Molecular Sciences and Nanosystems, Ca’ Foscari University of Venice, Via Torino 155/B, 30172 Mestre-VE (Italy); Cristofori, D. [Department of Molecular Sciences and Nanosystems, Ca’ Foscari University of Venice and Centre for Electron Microscopy “Giovanni Stevanato”, Via Torino 155/B, 30172 Mestre-VE (Italy); Tamisari, M. [Department of Physics and Earth Sciences, University of Ferrara, Via Saragat 1, 44121 Ferrara (Italy)

    2014-11-30

    Highlights: • RuN thin films in the zinc-blende structure have been synthesized by rf-magnetron sputtering. • Contribute is given to the understanding of phase-formation mechanisms in systems that under ambient conditions present positive enthalpies of formation. • Contribute is given to the understanding of phenomena occurring during reactive sputtering processes. • Nanopillar structure: suitable for application requiring a high effective area, like sensing, catalysis, and electrode material for energy-storage devices. - Abstract: 4d- and 5d-transition metal nitrides are of interest both because of their importance for the understanding of mechanisms of phase formation in systems that under ambient conditions present positive enthalpies of formation and because of their appealing structural and electronic properties. In this study, we report the synthesis of thin films of ruthenium mononitride (RuN) in the zinc-blende structure by radio-frequency-magnetron sputtering. Films present a characteristic structure of packed columns ending with tetrahedral tips. The effect of changing the synthesis parameters was investigated in detail. It was found that RuN can be formed if the nitrogen partial pressure exceeds a minimum value and that the addition of argon has the major effect of increasing the deposition rate because of its higher sputter ability. Temperature plays an important role: if it is too high, decomposition/desorption effects overcome those leading to the formation of the compound. Phenomena resulting in the formation of RuN occur at the surface of the growing films and are related to the interactions of ruthenium with energetic nitrogen ions, or atoms, which can penetrate the first atomic layers by low energy implantation. Because of its properties and structure, this material is a promising candidate for applications like sensing, catalysis, and electrode material for energy-storage devices.

  20. Development of natively textured surface hydrogenated Ga-doped ZnO-TCO thin films for solar cells via magnetron sputtering

    International Nuclear Information System (INIS)

    Wang, Fei; Chen, Xin-liang; Geng, Xin-hua; Zhang, De-kun; Wei, Chang-chun; Huang, Qian; Zhang, Xiao-dan; Zhao, Ying

    2012-01-01

    Highlights: ► Natively textured surface hydrogenated gallium-doped zinc oxide (HGZO) thin films have been deposited via magnetron sputtering on glass substrates. ► The directly deposited HGZO thin films present rough crater-type surface morphology. ► Typical HGZO thin film exhibits a high electron mobility of 41.3 cm 2 /V s and a relative low sheet resistance of ∼7.0 Ω. ► These HGZO thin films have high optical transmittances in the visible and near infrared region (∼380–1100 nm). ► A gradient H 2 growth method for fabricating HGZO thin films has been proposed in magnetron sputtering process. - Abstract: The main purposes are to obtain high quality transparent conductive oxide (TCO) based on zinc oxide (ZnO) thin films with high optical transparency in the visible and near infrared spectral range, high electrical conductivity and good light-scattering capability to enhance the path of the light inside the Si-based thin film solar cells. Natively textured surface hydrogenated gallium-doped ZnO (HGZO) thin films have been deposited via pulsed direct current (DC) magnetron sputtering on glass substrates at a substrate temperature of 553 K. These natively textured HGZO thin films exhibit high optical transmittance (over 80%) in the visible and near infrared region (λ = 380–1100 nm) and excellent electrical properties. The optimized HGZO thin film with crater-type textured surface obtained at the hydrogen flow rate of ∼2.0 sccm exhibits a high electron mobility of 41.3 cm 2 /V s and a relatively low sheet resistance of ∼7.0 Ω. The influences of hydrogen flow rates on the surface morphology, electrical and optical properties of HGZO thin films were investigated in detail. In addition, we put forward a method of gradient H 2 growth technique for fabricating HGZO thin films so as to obtain rough surface structure with good light-scattering capability and high electrical conductivity. “Crater-like” surface feature size and optical transmittance

  1. Structure and morphology of magnetron sputter deposited ultrathin ZnO films on confined polymeric template

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Ajaib [Discipline of Metallurgy Engineering and Materials Science, Indian Institute of Technology Indore, Indore 453552 (India); Schipmann, Susanne [II. Insatitute of Physics and JARA-FIT, RWTH Aachen University, 52056 Aachen (Germany); Mathur, Aakash; Pal, Dipayan [Discipline of Metallurgy Engineering and Materials Science, Indian Institute of Technology Indore, Indore 453552 (India); Sengupta, Amartya [Department of Physics, Indian Institute of Technology Delhi, Delhi 110016 (India); Klemradt, Uwe [II. Insatitute of Physics and JARA-FIT, RWTH Aachen University, 52056 Aachen (Germany); Chattopadhyay, Sudeshna, E-mail: sudeshna@iiti.ac.in [Discipline of Metallurgy Engineering and Materials Science, Indian Institute of Technology Indore, Indore 453552 (India); Discipline of Physics, Indian Institute of Technology Indore, Indore 453552 (India); Centre for Biosciences and Biomedical Engineering, Indian Institute of Technology Indore, Indore 453552 (India)

    2017-08-31

    Highlights: • Ultra-thin ZnO films grown on confined polymeric (polystyrene, PS) template. • XRR and GISAXS explore the surface/interfaces structure and morphology of ZnO/PS. • Insights into the growth mechanism of magnetron sputtered ZnO thin film on PS template. • Nucleated disk-like cylindrical particles are the basis of the formation of ZnO layers. • Effect of ZnO film thickness on room temperature PL spectra in ZnO/PS systems. - Abstract: The structure and morphology of ultra-thin zinc oxide (ZnO) films with different film thicknesses on confined polymer template were studied through X-ray reflectivity (XRR) and grazing incidence small angle X-ray scattering (GISAXS). Using magnetron sputter deposition technique ZnO thin films with different film thicknesses (<10 nm) were grown on confined polystyrene with ∼2R{sub g} film thickness, where R{sub g} ∼ 20 nm (R{sub g} is the unperturbed radius of gyration of polystyrene, defined by R{sub g} = 0.272 √M{sub 0}, and M{sub 0} is the molecular weight of polystyrene). The detailed internal structure, along the surface/interfaces and the growth direction of the system were explored in this study, which provides insight into the growth procedure of ZnO on confined polymer and reveals that a thin layer of ZnO, with very low surface and interface roughness, can be grown by DC magnetron sputtering technique, with approximately full coverage (with bulk like electron density) even in nm order of thickness, in 2–7 nm range on confined polymer template, without disturbing the structure of the underneath template. The resulting ZnO-polystyrene hybrid systems show strong ZnO near band edge (NBE) and deep-level (DLE) emissions in their room temperature photoluminescence spectra, where the contribution of DLE gets relatively stronger with decreasing ZnO film thickness, indicating a significant enhancement of surface defects because of the greater surface to volume ratio in thinner films.

  2. A fabrication guide for planar silicon quantum dot heterostructures

    Science.gov (United States)

    Spruijtenburg, Paul C.; Amitonov, Sergey V.; van der Wiel, Wilfred G.; Zwanenburg, Floris A.

    2018-04-01

    We describe important considerations to create top-down fabricated planar quantum dots in silicon, often not discussed in detail in literature. The subtle interplay between intrinsic material properties, interfaces and fabrication processes plays a crucial role in the formation of electrostatically defined quantum dots. Processes such as oxidation, physical vapor deposition and atomic-layer deposition must be tailored in order to prevent unwanted side effects such as defects, disorder and dewetting. In two directly related manuscripts written in parallel we use techniques described in this work to create depletion-mode quantum dots in intrinsic silicon, and low-disorder silicon quantum dots defined with palladium gates. While we discuss three different planar gate structures, the general principles also apply to 0D and 1D systems, such as self-assembled islands and nanowires.

  3. Efficient and stable solution-processed planar perovskite solar cells via contact passivation

    KAUST Repository

    Tan, Hairen; Jain, Ankit; Voznyy, Oleksandr; Lan, Xinzheng; Garcí a de Arquer, F. Pelayo; Fan, James Z.; Quintero-Bermudez, Rafael; Yuan, Mingjian; Zhang, Bo; Zhao, Yicheng; Fan, Fengjia; Li, Peicheng; Quan, Li Na; Zhao, Yongbiao; Lu, Zheng-Hong; Yang, Zhenyu; Hoogland, Sjoerd; Sargent, Edward H.

    2017-01-01

    Planar perovskite solar cells (PSCs) made entirely via solution processing at low temperatures (<150°C) offer promise for simple manufacturing, compatibility with flexible substrates, and perovskite-based tandem devices. However, these PSCs require an electron-selective layer that performs well with similar processing. We report a contact-passivation strategy using chlorine-capped TiO2 colloidal nanocrystal film that mitigates interfacial recombination and improves interface binding in low-temperature planar solar cells. We fabricated solar cells with certified efficiencies of 20.1 and 19.5% for active areas of 0.049 and 1.1 square centimeters, respectively, achieved via low-temperature solution processing. Solar cells with efficiency greater than 20% retained 90% (97% after dark recovery) of their initial performance after 500 hours of continuous room-temperature operation at their maximum power point under 1-sun illumination (where 1 sun is defined as the standard illumination at AM1.5, or 1 kilowatt/square meter).

  4. Efficient and stable solution-processed planar perovskite solar cells via contact passivation

    KAUST Repository

    Tan, Hairen

    2017-02-03

    Planar perovskite solar cells (PSCs) made entirely via solution processing at low temperatures (<150°C) offer promise for simple manufacturing, compatibility with flexible substrates, and perovskite-based tandem devices. However, these PSCs require an electron-selective layer that performs well with similar processing. We report a contact-passivation strategy using chlorine-capped TiO2 colloidal nanocrystal film that mitigates interfacial recombination and improves interface binding in low-temperature planar solar cells. We fabricated solar cells with certified efficiencies of 20.1 and 19.5% for active areas of 0.049 and 1.1 square centimeters, respectively, achieved via low-temperature solution processing. Solar cells with efficiency greater than 20% retained 90% (97% after dark recovery) of their initial performance after 500 hours of continuous room-temperature operation at their maximum power point under 1-sun illumination (where 1 sun is defined as the standard illumination at AM1.5, or 1 kilowatt/square meter).

  5. Analysis of Pressure Variations in a Low-Pressure Nickel-Hydrogen Battery - Part 1.

    Science.gov (United States)

    Purushothaman, B K; Wainright, J S

    2012-05-15

    A low pressure nickel-hydrogen battery using either a metal hydride or gaseous hydrogen for H(2) storage has been developed for use in implantable neuroprosthetic devices. In this paper, pressure variations inside the cell for the gaseous hydrogen version are analyzed and correlated with oxygen evolution side reaction at the end of charging, the recombination of oxygen with hydrogen during charging and a subsequent rest period, and the self-discharge of the nickel electrode. About 70% of the recombination occurred simultaneously with oxygen evolution during charging and the remaining oxygen recombined with hydrogen during the 1(st) hour after charging. Self-discharge of the cell varies linearly with hydrogen pressure at a given state of charge and increased with increasing battery charge levels. The coulometric efficiency calculated based on analysis of the pressure-time data agreed well with the efficiency calculated based on the current-time data. Pressure variations in the battery are simulated accurately to predict coulometric efficiency and the state of charge of the cell, factors of extreme importance for a battery intended for implantation within the human body.

  6. Gain measurements in CO2 CW low pressure lasers

    International Nuclear Information System (INIS)

    Rodrigues, N.A.S.; Chanes Junior, J.B.; Jayaram, K.

    1983-01-01

    A series of gain measurements in low pressure CO 2 CW laser were performed in order to study the behaviour of a CO 2 laser ampliflier as a function of pressure and discharge current. A theoretical model, based on rate equations is also presented to describe the laser behaviour and the experimental procedure adopted. (C.L.B.) [pt

  7. Electrical properties of AlN{sub x}O{sub y} thin films prepared by reactive magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Borges, J., E-mail: joelborges@fisica.uminho.pt [Centro de Fisica, Universidade do Minho, 4710-057 Braga (Portugal); Martin, N. [Institut FEMTO-ST, Departement MN2S, UMR 6174 (CNRS, UFC, ENSMM, UTBM) 32, Avenue de l' Observatoire 25044 BESANCON Cedex (France); Barradas, N.P.; Alves, E. [Instituto Superior Tecnico, Instituto Tecnologico Nuclear, E.N. 10, 2686-953 Sacavem (Portugal); Eyidi, D.; Beaufort, M.F.; Riviere, J.P. [Institut PPRIME, UPR 3346 CNRS-Universite de Poitiers-ENSMA, Departement de Physique et Mecanique des Materiaux, BP 30179 86962 Chasseneuil-Futuroscope Cedex (France); Vaz, F.; Marques, L. [Centro de Fisica, Universidade do Minho, 4710-057 Braga (Portugal)

    2012-08-31

    Direct current magnetron sputtering was used to produce AlN{sub x}O{sub y} thin films, using an aluminum target, argon and a mixture of N{sub 2} + O{sub 2} (17:3) as reactive gases. The partial pressure of the reactive gas mixture was increased, maintaining the discharge current constant. Within the two identified regimes of the target (metallic and compound), four different tendencies for the deposition rate were found and a morphological evolution from columnar towards cauliflower-type, ending up as dense and featureless-type films. The structure was found to be Al-type (face centered cubic) and the structural characterization carried out by X-ray diffraction and transmission electron microscopy suggested the formation of an aluminum-based polycrystalline phase dispersed in an amorphous aluminum oxide/nitride (or oxynitride) matrix. This type of structure, composition, morphology and grain size, were found to be strongly correlated with the electrical response of the films, which showed a gradual transition between metallic-like responses towards semiconducting and even insulating-type behaviors. A group of films with high aluminum content revealed a sharp decrease of the temperature coefficient of resistance (TCR) as the concentration ratio of non-metallic/aluminum atomic ratio increased. Another group of samples, where the non-metallic content became more important, revealed a smooth transition between positive and negative values of TCR. In order to test whether the oxynitride films have a unique behavior or simply a transition between the typical responses of aluminum and of those of the correspondent nitride and oxide, the electrical properties of the ternary oxynitride system were compared with AlN{sub x} and AlO{sub y} systems, prepared in similar conditions. - Highlights: Black-Right-Pointing-Pointer AlN{sub x}O{sub y} thin films were produced using magnetron sputtering. Black-Right-Pointing-Pointer AlN{sub x}O{sub y} film morphology, composition and

  8. Electrochromic properties of bipolar pulsed magnetron sputter deposited tungsten–molybdenum oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Tai-Nan [Chemical Engineering Division, Institute of Nuclear Energy Research, Taoyuan 325, Taiwan, ROC (China); Lin, Yi Han; Lee, Chin Tan [Department of Electronic Engineering, National Quemoy University, Kinmen 892, Taiwan, ROC (China); Han, Sheng [Center of General Education, National Taichung Institute of Technology, Taichung 404, Taiwan, ROC (China); Weng, Ko-Wei, E-mail: kowei@nqu.edu.tw [Department of Electronic Engineering, National Quemoy University, Kinmen 892, Taiwan, ROC (China)

    2015-06-01

    There are great interests in electrochromic technology for smart windows and displays over past decades. In this study, the WMoO{sub x} thin films were deposited onto indium tin oxide glass and silicon substrates by pulsed magnetron sputter system with W and Mo targets. The films were deposited with fixed W target power while the variant parameter of Mo target power in the range 50, 100, 150 and 200 W was investigated. The working pressure was fixed at 1.33 Pa with a gas mixture of Ar (30 sccm) and O{sub 2} (15 sccm). The film thickness increased with the Mo target power. Higher plasma power resulted in a crystalline structure which would reduce the electrochromic property of the film. The influence of plasma powers applied to Mo target on the structural, optical and electrochromic properties of the WMoO{sub x} thin films has been investigated. WMoO{sub x} films grown at Mo target powers less than 100 W were found to be amorphous. The films deposited at 150 W, which is the optimal fabrication condition, exhibit better electrochromic properties with high optical modulation, high coloration efficiency and less color memory effect at wavelength 400, 550 and 800 nm. The improvement resulted from the effect of doping Mo has been tested. The maximum ΔT (%) values are 36.6% at 400 nm, 65.6% at 550 nm, and 66.6% at 800 nm for pure WO{sub 3} film. The addition of Mo content in the WMoO{sub x} films provides better resistance to the short wavelength light source and can be used in the concerned application. - Highlights: • WMoO{sub x} films are deposited by pulsed magnetron sputter with pure W and Mo targets. • Mo addition in WMoO{sub x} provides better resistance to short wavelength light source. • WMoO{sub x} films exhibit electrochemical stability in the cycling test.

  9. Comparison of under-pressure and over-pressure pulse tests conducted in low-permeability basalt horizons at the Hanford Site, Washington State

    International Nuclear Information System (INIS)

    Thorne, P.D.; Spane, F.A. Jr.

    1984-10-01

    Over-pressure pulse tests (pressurized slug tests have been widely used by others for hydraulic characterization of low-permeability ( -8 m/sec) rock formations. Recent field studies of low-permeability basalt horizons at the Hanford Site, Washington, indicate that the under-pressure pulse technique is also a viable test method for hydraulic characterization studies. For over-pressure pulse tests, fluid within the test system is rapidly pressurized and the associated pressure decay is monitored as compressed fluid within the test system expands and flows into the test formation. Under-pressure pulse tests are conducted in a similar manner by abruptly decreasing the pressure of fluid within the test system, and monitoring the associated increase in pressure as fluid flows from the formation into the test system. Both pulse test methods have been used in conjunction with other types of tests to determine the hydraulic properties of selected low-permeability basalt horizons at Hanford test sites. Results from both pulse test methods generally provide comparable estimates of hydraulic properties and are in good agreement with those from other tests

  10. High-pressure powder x-ray diffraction experiments on Zn at low temperature

    CERN Document Server

    Takemura, K; Fujihisa, H; Kikegawa, T

    2002-01-01

    High-pressure powder x-ray diffraction experiments have been performed on Zn with a He-pressure medium at low temperature. When the sample was compressed in the He medium at low temperature, large nonhydrostaticity developed, yielding erroneous lattice parameters. On the other hand, when the pressure was changed at high temperatures, good hydrostaticity was maintained. No anomaly in the volume dependence of the c/a axial ratio has been found.

  11. In situ plasma diagnostics study of a commercial high-power hollow cathode magnetron deposition tool

    International Nuclear Information System (INIS)

    Meng Liang; Raju, Ramasamy; Flauta, Randolph; Shin, Hyungjoo; Ruzic, David N.; Hayden, Douglas B.

    2010-01-01

    Using a newly designed and built plasma diagnostic system, the plasma parameters were investigated on a commercial 200 mm high-power hollow cathode magnetron (HCM) physical vapor deposition tool using Ta target under argon plasma. A three dimensional (3D) scanning radio frequency (rf)-compensated Langmuir probe was constructed to measure the spatial distribution of the electron temperature (T e ) and electron density (n e ) in the substrate region of the HCM tool at various input powers (2-15 kW) and pressures (10-70 mTorr). The T e was in the range of 1-3 eV, scaling with decreasing power and decreasing pressure. Meanwhile, n e was in the range of 4x10 10 -1x10 12 cm -3 scaling with increasing power and decreasing pressure. As metal deposits on the probe during the probe measurements, a self-cleaning plasma cup was designed and installed in the chamber to clean the tungsten probe tip. However, its effectiveness in recovering the measured plasma parameters was hindered by the metal layer deposited on the insulating probe tube which was accounted for the variation in the plasma measurements. Using a quartz crystal microbalance combined with electrostatic filters, the ionization fraction of the metal flux was measured at various input power of 2-16 kW and pressure of 5-40 mTorr. The metal ionization fraction reduced significantly with the increasing input power and decreasing gas pressure which were attributed to the corresponding variation in the ionization cross section and the residence time of the sputtered atoms in the plasma, respectively. Both the metal neutral and ion flux increased at higher power and lower pressure. The 3D measurements further showed that the ionization fraction decreased when moving up from the substrate to the cathode.

  12. Study of hydrogenated silicene: The initialization model of hydrogenation on planar, low buckled and high buckled structures of silicene

    International Nuclear Information System (INIS)

    Syaputra, Marhamni; Wella, Sasfan Arman; Wungu, Triati Dewi Kencana; Purqon, Acep; Suprijadi

    2015-01-01

    We study the hydrogenation structures possessed by silicene i.e. planar (PL), low buckled (LB) and high buckled (HB). On those structures we found the hydrogenation process occurs with some particular notes. Hydrogen stable position on the silicene surface is determined by its initial configuration. We only considered the fully hydrogenated case with the formula unit (SiH) n for all of these structures. Physical and electronic structure shift after the process are compared with hydrogenated graphene. Moreover, we observed a chemical process in the presence of hydrogen on the PL structure by nudged elastic band (NEB) which illustrates how hydrogen has a significant impact to the force barrier of the PL that changing it from its original structure

  13. A new method for decontamination of radioactive waste using low-pressure arc discharge

    International Nuclear Information System (INIS)

    Fujiwara, Kazutoshi; Furukawa, Shizue; Adachi, Kazuo; Amakawa, Tadashi; Kanbe, Hiromi

    2006-01-01

    In this paper, the decontamination features of the low-pressure arc-discharge method for radioactive waste generated in the operation and maintenance of nuclear power plants were examined. The low-pressure arc-discharge method was applied to type 304 stainless-steel, type 316L stainless-steel, alloy 600 and carbon-steel covered with radioactive corrosion products. Approximately, 80% of the radioactivity build up on stainless-steels could be removed by the low-pressure arc discharge

  14. Boron, arsenic and phosphorus dopant incorporation during low temperature low pressure silicon epitaxial growth

    International Nuclear Information System (INIS)

    Borland, J.O.; Thompson, T.; Tagle, V.; Benzing, W.

    1987-01-01

    Submicron silicon epitaxial structures with very abrupt epi/substrate transition widths have been realized through the use of low temperature silicon epitaxial growth techniques. At these low temperature and low pressure epitaxial growth conditions there is minimal, if any, dopant diffusion from the substrate into the epilayer during deposition. The reincorporation of autodoped dopant as well as the incorporation of intentional dopant can be a trade-off at low temperatures and low pressures. For advanced CMOS and Bi-CMOS technologies, five to six orders of magnitude change in concentration levels are desirable. In this investigation, all of the epitaxial depositions were carried out in an AMC-7810 epi-reactor with standard jets for a turbulent mixing system, and using a modified center inject configuration to achieve a single pass laminar flow system. To simulate the reincorporation of various autodoped dopant, the authors ran a controlled dopant flow of 100 sccm for each of the three dopants (boron, phosphorus and arsenic) to achieve the controlled background dopant level in the reactor gas stream

  15. On the control of deposition process for enhanced mechanical properties of nc-TiC/a-C: H coatings with DC magnetron sputtering at low or high ion flux

    Czech Academy of Sciences Publication Activity Database

    Souček, P.; Schmidtová, T.; Zábranský, L.; Buršíková, V.; Vašina, P.; Caha, O.; Buršík, Jiří; Peřina, Vratislav; Mikšová, Romana; Pei, Y.; de Hosson, J. T. M.

    Roč. 255, 25 September (2014), s. 8-14 ISSN 0257-8972 Institutional support: RVO:68081723 ; RVO:61389005 Keywords : enhanced mechanical properties * ion flux on the substrate * magnetron sputtering Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 1.998, year: 2014

  16. Effects of nitrogen ion implantation time on tungsten films deposited by DC magnetron sputtering on AISI 410 martensitic stainless steel

    Energy Technology Data Exchange (ETDEWEB)

    Malau, Viktor, E-mail: malau@ugm.ac.id; Ilman, Mochammad Noer, E-mail: noer-ilman@yahoo.com; Iswanto, Priyo Tri, E-mail: priyatri@yahoo.com; Jatisukamto, Gaguk, E-mail: gagukjtsk@yahoo.co.id [Mechanical and Industrial Engineering Department, Gadjah Mada University Jl. Grafika 2, Yogyakarta, 55281 (Indonesia)

    2016-03-29

    Nitrogen ion implantation time on tungsten thin film deposited on surface of AISI 410 steel has been performed. Tungsten thin film produced by dc magnetron sputtering method was deposited on AISI 410 martensitic stainless steel substrates, and then the nitrogen ions were implanted on tungsten thin film. The objective of this research is to investigate the effects of implantation deposition time on surface roughness, microhardness, specific wear and corrosion rate of nitrogen implanted on tungsten film. Magnetron sputtering process was performed by using plasma gas of argon (Ar) to bombardier tungsten target (W) in a vacuum chamber with a pressure of 7.6 x 10{sup −2} torr, a voltage of 300 V, a sputter current of 80 mA for sputtered time of 10 minutes. Nitrogen implantation on tungsten film was done with an initial pressure of 3x10{sup −6} mbar, a fluence of 2 x 10{sup 17} ions/cm{sup 2}, an energy of 100 keV and implantation deposition times of 0, 20, 30 and 40 minutes. The surface roughness, microhardness, specific wear and corrosion rate of the films were evaluated by surfcorder test, Vickers microhardness test, wear test and potentiostat (galvanostat) test respectively. The results show that the nitrogen ions implanted deposition time on tungsten film can modify the surface roughness, microhardness, specific wear and corrosion rate. The minimum surface roughness, specific wear and corrosion rate can be obtained for implantation time of 20 minutes and the maximum microhardness of the film is 329 VHN (Vickers Hardness Number) for implantation time of 30 minutes. The specific wear and corrosion rate of the film depend directly on the surface roughness.

  17. Fabrication and characterization of magnetic composite membrane pressure sensor

    KAUST Repository

    Khan, Mohammed Asadullah

    2016-04-20

    This paper describes a magnetic field powered pressure sensor, which comprises a coil array and a magnetic composite membrane. The composite membrane is made by embedding a ribbon of the amorphous soft magnetic alloy Vitrovac®, in a 17 mm x 25 mm x 1.5 mm Polydimethylsiloxane (PDMS) layer. PDMS is chosen for its low Young\\'s modulus and the amorphous alloy for its high permeability. The membrane is suspended 1.5 mm above a 17x19 array of microfabricated planar coils. The coils are fabricated by patterning a 620 nm thick gold layer. Each coil occupies an area of 36000 μm2 and consists of 14 turns. The sensor is tested by subjecting it to pressure and simultaneously exciting it by a 24 A/m, 100 kHz magnetic field. A pressure change from 0 kPa to 5.1 kPa, results in a 5400 ppm change in the voltage output.

  18. Fabrication and characterization of magnetic composite membrane pressure sensor

    KAUST Repository

    Khan, Mohammed Asadullah; Alfadhel, Ahmed; Kosel, Jü rgen; Bakolka, M.

    2016-01-01

    This paper describes a magnetic field powered pressure sensor, which comprises a coil array and a magnetic composite membrane. The composite membrane is made by embedding a ribbon of the amorphous soft magnetic alloy Vitrovac®, in a 17 mm x 25 mm x 1.5 mm Polydimethylsiloxane (PDMS) layer. PDMS is chosen for its low Young's modulus and the amorphous alloy for its high permeability. The membrane is suspended 1.5 mm above a 17x19 array of microfabricated planar coils. The coils are fabricated by patterning a 620 nm thick gold layer. Each coil occupies an area of 36000 μm2 and consists of 14 turns. The sensor is tested by subjecting it to pressure and simultaneously exciting it by a 24 A/m, 100 kHz magnetic field. A pressure change from 0 kPa to 5.1 kPa, results in a 5400 ppm change in the voltage output.

  19. Foldable micro coils for a transponder system measuring intraocular pressure

    Energy Technology Data Exchange (ETDEWEB)

    Ullerich, S.; Schnakenberg, U. [Technische Hochschule Aachen (Germany). Inst. of Materials in Electrical Engineering 1; Mokwa, W. [Technische Hochschule Aachen (Germany). Inst. of Materials in Electrical Engineering 1]|[Fraunhofer Inst. of Microelectronic Circuits and Systems, Duisburg (Germany); Boegel, G. vom [Fraunhofer Inst. of Microelectronic Circuits and Systems, Duisburg (Germany)

    2001-07-01

    A foldable transponder system consisting of a chip and a micro coil for measuring intraocular pressure continuously is presented. The system will be integrated in the haptic of a soft artificial intraocular lens. Calculations of planar micro coils with 6 mm and 10.3 mm in diameter show the limits for planar coils with an outer diameter of 6 mm. For the realisation of the transponder system a 20 {mu}m thick coil with an outer diameter of 10.3 mm, an inner diameter of 7.7 mm, 16 turns and a gap of 20 {mu}m between the windings was selected. Measurements show a good agreement between calculated and measured values. Wireless pressure measurements were carried out showing a linear behaviour of the output signal with respect to the applied pressure. (orig.)

  20. Performance of planar heterojunction perovskite solar cells under light concentration

    Directory of Open Access Journals (Sweden)

    Aaesha Alnuaimi

    2016-11-01

    Full Text Available In this work, we present 2D simulation of planar heterojunction perovskite solar cells under high concentration using physics-based TCAD. The performance of planar perovskite heterojunction solar cells is examined up to 1000 suns. We analyze the effect of HTM mobility and band structure, surface recombination velocities at interfaces and the effect of series resistance under concentrated light. The simulation results revealed that the low mobility of HTM material limits the improvement in power conversation efficiency of perovskite solar cells under concentration. In addition, large band offset at perovskite/HTM interface contributes to the high series resistance. Moreover, losses due to high surface recombination at interfaces and the high series resistance deteriorate significantly the performance of perovskite solar cells under concentration.