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Sample records for low-k dielectrics investigated

  1. Investigation of plasma etch damage to porous oxycarbosilane ultra low-k dielectric

    International Nuclear Information System (INIS)

    Bruce, R L; Engelmann, S; Purushothaman, S; Volksen, W; Frot, T J; Magbitang, T; Dubois, G; Darnon, M

    2013-01-01

    There has been much interest recently in porous oxycarbosilane (POCS)-based materials as the ultra-low k dielectric (ULK) in back-end-of-line (BEOL) applications due to their superior mechanical properties compared to traditional organosilicate-based ULK materials at equivalent porosity and dielectric constant. While it is well known that plasma etching and strip processes can cause significant damage to ULK materials in general, little has been reported about the effect of plasma damage to POCS as the ULK material. We investigated the effect of changing the gas discharge chemistry and substrate bias in the dielectric trench etch and also the subsequent effect of the cap-open etch on plasma damage to POCS during BEOL integration. Large differences in surface roughness and damage behaviour were observed by changing the fluorocarbon depositing conditions. These damage behaviour trends will be discussed and potential rationalizations offered based on the formation of pits and craters at the etch front that lead to surface roughness and microtrenching. (paper)

  2. Mechanistic study of plasma damage to porous low-k: Process development and dielectric recovery

    Science.gov (United States)

    Shi, Hualiang

    Low-k dielectrics with porosity are being introduced to reduce the RC delay of Cu/low-k interconnect. However, during the O2 plasma ashing process, the porous low-k dielectrics tend to degrade due to methyl depletion, moisture uptake, and densification, increasing the dielectric constant and leakage current. This dissertation presents a study of the mechanisms of plasma damage and dielectric recovery. The kinetics of plasma interaction with low-k dielectrics was investigated both experimentally and theoretically. By using a gap structure, the roles of ion, photon, and radical in producing damage on low-k dielectrics were differentiated. Oxidative plasma induced damage was proportional to the oxygen radical density, enhanced by VUV photon, and increased with substrate temperature. Ion bombardment induced surface densification, blocking radical diffusion. Two analytical models were derived to quantify the plasma damage. Based on the radical diffusion, reaction, and recombination inside porous low-k dielectrics, a plasma altered layer model was derived to interpret the chemical effect in the low ion energy region. It predicted that oxidative plasma induced damage can be reduced by decreasing pore radius, substrate temperature, and oxygen radical density and increasing carbon concentration and surface recombination rate inside low-k dielectrics. The model validity was verified by experiments and Monte-Carlo simulations. This model was also extended to the patterned low-k structure. Based on the ion collision cascade process, a sputtering yield model was introduced to interpret the physical effect in the high ion energy region. The model validity was verified by checking the ion angular and energy dependences of sputtering yield using O2/He/Ar plasma, low-k dielectrics with different k values, and a Faraday cage. Low-k dielectrics and plasma process were optimized to reduce plasma damage, including increasing carbon concentration in low-k dielectrics, switching plasma

  3. Mechanical property changes in porous low-k dielectric thin films during processing

    Energy Technology Data Exchange (ETDEWEB)

    Stan, G., E-mail: gheorghe.stan@nist.gov; Gates, R. S. [Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); Kavuri, P. [Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); Torres, J.; Michalak, D.; Ege, C.; Bielefeld, J.; King, S. W. [Logic Technology Development, Intel Corporation, Hillsboro, Oregon 97124 (United States)

    2014-10-13

    The design of future generations of Cu-low-k dielectric interconnects with reduced electronic crosstalk often requires engineering materials with an optimal trade off between their dielectric constant and elastic modulus. This is because the benefits associated with the reduction of the dielectric constant by increasing the porosity of materials, for example, can adversely affect their mechanical integrity during processing. By using load-dependent contact-resonance atomic force microscopy, the changes in the elastic modulus of low-k dielectric materials due to processing were accurately measured. These changes were linked to alterations sustained by the structure of low-k dielectric films during processing. A two-phase model was used for quantitative assessments of the elastic modulus changes undergone by the organosilicate skeleton of the structure of porous and pore-filled dielectrics.

  4. Examination of Critical Length Effect in Copper Interconnects With Oxide and Low-k Dielectrics

    International Nuclear Information System (INIS)

    Thrasher, Stacye; Gall, Martin; Justison, Patrick; Hernandez, Richard; Kawasaki, Hisao; Capasso, Cristiano; Nguyen, Timothy

    2004-01-01

    As technology moves toward faster microelectronic devices with smaller feature sizes, copper is replacing aluminum-copper alloy and low-k dielectric is replacing oxide as the materials of choice for advanced interconnect integrations. Copper not only brings to the table the advantage of lower resistivity, but also exhibits better electromigration performance when compared to Al(Cu). Low-k dielectric materials are advantageous because they reduce power consumption and improve signal delay. Due to these advantages, the industry trend is moving towards integrating copper and low-k dielectric for high performance interconnects. The purpose of this study is to evaluate the critical length effect in single-inlaid copper interconnects and determine the critical product (jl)c, for a variety of integrations, examining the effect of ILD (oxide vs. low-k), geometry, and stress temperature

  5. Analysis of OFF-state and ON-state performance in a silicon-on-insulator power MOSFET with a low-k dielectric trench

    International Nuclear Information System (INIS)

    Wang Zhigang; Zhang Bo; Li Zhaoji

    2013-01-01

    A novel silicon-on-insulator (SOI) MOSFET with a variable low-k dielectric trench (LDT MOSFET) is proposed and its performance and characteristics are investigated. The trench in the drift region between drain and source is filled with low-k dielectric to extend the effective drift region. At OFF state, the low-k dielectric trench (LDT) can sustain high voltage and enhance the dielectric field due to the accumulation of ionized charges. At the same time, the vertical dielectric field in the buried oxide can also be enhanced by these ionized charges. Additionally, ON-state analysis of LDT MOSFET demonstrates excellent forward characteristics, such as low gate-to-drain charge density ( 2 ) and a robust safe operating area (0–84 V). (semiconductor devices)

  6. Brillouin light scattering studies on the mechanical properties of ultrathin, porous low-K dielectric films

    Science.gov (United States)

    Zhou, Wei; Sooryakumar, R.; King, Sean

    2010-03-01

    Low K dielectrics have predominantly replaced silicon dioxide as the interlayer dielectric material for interconnects in state of the art integrated circuits. To further reduce interconnect resistance-capacitance (RC) delays, additional reductions in the K for these low-K materials is being pursued by the introduction of controlled levels of porosity. The main challenge for porous low-K dielectrics is the substantial reduction in mechanical properties that is accompanied by the increased pore volume content needed to reduce K. We report on the application of the nondestructive Brillouin light scattering technique to monitor and characterize the mechanical properties of these porous films at thicknesses well below 200 nm that are pertinent to present applications. Observation of longitudinal and transverse standing wave acoustic resonances and the dispersion that accompany their transformation into traveling waves with finite in-plane wave vectors provides for the principal elastic constants that completely characterize the mechanical properties of these porous films. The mode amplitudes of the standing waves, their variation within the film, and the calculated Brillouin intensities account for most aspects of the spectra. The resulting elastic constants are compared with corresponding values obtained from other experimental techniques.

  7. Elastic properties of porous low-k dielectric nano-films

    Science.gov (United States)

    Zhou, W.; Bailey, S.; Sooryakumar, R.; King, S.; Xu, G.; Mays, E.; Ege, C.; Bielefeld, J.

    2011-08-01

    Low-k dielectrics have predominantly replaced silicon dioxide as the interlayer dielectric for interconnects in state of the art integrated circuits. In order to further reduce interconnect RC delays, additional reductions in k for these low-k materials are being pursued via the introduction of controlled levels of porosity. The main challenge for such dielectrics is the substantial reduction in elastic properties that accompanies the increased pore volume. We report on Brillouin light scattering measurements used to determine the elastic properties of these films at thicknesses well below 200 nm, which are pertinent to their introduction into present ultralarge scale integrated technology. The observation of longitudinal and transverse standing wave acoustic resonances and their transformation into traveling waves with finite in-plane wave vectors provides for a direct non-destructive measure of the principal elastic constants that characterize the elastic properties of these porous nano-scale films. The mode dispersion further confirms that for porosity levels of up to 25%, the reduction in the dielectric constant does not result in severe degradation in the Young's modulus and Poisson's ratio of the films.

  8. Porogen residues detection in optical properties of low-k dielectrics cured by ultraviolet radiation

    Energy Technology Data Exchange (ETDEWEB)

    Marsik, Premysl, E-mail: marsik@physics.muni.c [UFKL, Masaryk University, Kotlarska 2, 61137 Brno (Czech Republic); IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Verdonck, Patrick [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); De Roest, David [ASM Belgium, Kapeldreef 75, 3001 Leuven (Belgium); Baklanov, Mikhail R. [IMEC, Kapeldreef 75, 3001 Leuven (Belgium)

    2010-05-31

    The optical properties of low dielectric constant (low-k) films have been determined by variable angle spectroscopic ellipsometry in the range from 2 eV to 9 eV to characterize the process of porogen removal during the UV-cure. The studied carbon doped oxide (SiCOH) porous dielectric films have been prepared by plasma enhanced chemical vapor deposition. The films have been deposited as a composition of a matrix precursor and an organic porogen. After deposition, the films have been cured by thermal annealing and UV irradiation ({lambda} = 172 nm) to remove the porogen and create a porosity of 33%, reaching a dielectric constant of 2.3. The process of porogen decomposition and removal has been studied on series of low-k samples, UV-cured for various times. Additional samples have been prepared by the deposition and curing of the porogen film, without SiCOH matrix, and the matrix material itself, without porogen. The analysis of the optical response of the porous dielectric as a mixture of matrix material, porogen and voids, together with Fourier transform infrared analysis, allows the sensitive detection of the volume of the porogen and indicates the existence of decomposed porogen residues inside the pores, even for long curing time. The variation of the deposition and curing conditions can control the amount of the porogen residues and the final porosity.

  9. Effects of vacuum ultraviolet irradiation on trapped charges and leakage currents of low-k organosilicate dielectrics

    Energy Technology Data Exchange (ETDEWEB)

    Zheng, H.; Guo, X.; Pei, D.; Shohet, J. L. [Plasma Processing and Technology Laboratory and Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Ryan, E. T. [GLOBALFOUNDRIES, Albany, New York 12203 (United States); Nishi, Y. [Stanford University, Stanford, California 94305 (United States)

    2015-05-11

    Vacuum ultraviolet (VUV) photoemission spectroscopy is utilized to investigate the distribution of trapped charges within the bandgap of low dielectric constant (low-k) organosilicate (SiCOH) materials. It was found that trapped charges are continuously distributed within the bandgap of porous SiCOH and the center of the trapped states is 1.3 eV above the valence band of the tested sample. By comparing photoemission spectroscopic results before and after VUV exposure, VUV irradiation with photon energies between 7.6 and 8.9 eV was found to deplete trapped charge while UV exposure with photon energies less than 6.0 eV induces more trapped charges in tested samples. Current-Voltage (IV) characteristics results show that the reliability of dielectrics is improved after VUV irradiation with photon energies between 7.6 and 8.9 eV, while UV exposure results in an increased level of leakage current and a decreased breakdown voltage, both of which are harmful to the reliability of the dielectric. This work shows that VUV irradiation holds the potential to substitute for UV curing in microelectronic processing to improve the reliability of low-k dielectrics by mitigating the leakage currents and trapped charges induced by UV irradiation.

  10. Future directions of positron annihilation spectroscopy in low-k dielectric films

    International Nuclear Information System (INIS)

    Gidley, D.W.; Vallery, R.S.; Liu, M.; Peng, H.G.

    2007-01-01

    Positronium Annihilation Lifetime Spectroscopy (PALS) has become recognized in the microelectronics industry as one of only several methods capable of quantitatively characterizing engineered nanopores in next-generation (k < 2.2) interlayer dielectric (ILD) thin films. Successes and shortcomings of PALS to date will be assessed and compared with other methods of porosimetry such as ellipsometric and X-ray porosimetries (EP and XRP). A major theme in future low-k research focuses on the ability to integrate porous ILD's into chip fabrication; the vulnerability of porous dielectrics to etching, ashing, and chemical-mechanical polishing in process integration is delaying the introduction of ultra-low-k films. As device size approaches 45 nm the need to probe very small (sub-nanometer), semi-isolated pores beneath thin diffusion barriers is even more challenging. Depth-profiled PALS with its ability to determine a quantitative pore interconnection length and easily resolve 0.3 nm pores beneath diffusion barriers or in trench-patterned dielectrics should have a bright future in porous ILD research. The ability of PALS (and PAS in general) to deduce evolution and growth of pores with porosity should find broad applicability in the emerging field of high performance materials with strategically engineered nanopores. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. Effect of ultraviolet curing wavelength on low-k dielectric material properties and plasma damage resistance

    Energy Technology Data Exchange (ETDEWEB)

    Marsik, Premysl, E-mail: marsik@physics.muni.c [UFKL, Masaryk University, Kotlarska 2, 61137 Brno (Czech Republic); IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Urbanowicz, Adam M. [UFKL, Masaryk University, Kotlarska 2, 61137 Brno (Czech Republic); Verdonck, Patrick [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); De Roest, David; Sprey, Hessel [ASM Belgium, Kapeldreef 75, 3001 Leuven (Belgium); Baklanov, Mikhail R. [IMEC, Kapeldreef 75, 3001 Leuven (Belgium)

    2011-03-31

    A set of SiCOH low dielectric constant films (low-k) has been deposited by plasma enhanced chemical vapor deposition using variable flow rates of the porogen (sacrificial phase) and matrix precursors. During the deposition, two different substrate temperatures and radio frequency power settings were applied. Next, the deposited films were cured by the UV assisted annealing (UV-cure) using two industrial UV light sources: a monochromatic UV source with intensity maximum at {lambda} = 172 nm (lamp A) and a broadband UV source with intensity spectrum distributed below 200 nm (lamp B). This set of various low-k films has been additionally exposed to NH{sub 3} plasma (used for the CuO{sub x} reduction during Cu/low-k integration) in order to evaluate the effect of the film preparation conditions on the plasma damage resistance of low-k material. Results show that the choice of the UV-curing light source has significant impact on the chemical composition of the low-k material and modifies the porogen removal efficiency and subsequently the material porosity. The 172 nm photons from lamp A induce greater changes to most of the evaluated properties, particularly causing undesired removal of Si-CH{sub 3} groups and their replacement with Si-H. The softer broadband radiation from lamp B improves the porogen removal efficiency, leaving less porogen residues detected by spectroscopic ellipsometry in UV range. Furthermore, it was found that the degree of bulk hydrophilization (plasma damage) after NH{sub 3} plasma exposure is driven mainly by the film porosity.

  12. Effects of vacuum-ultraviolet irradiation on copper penetration into low-k dielectrics under bias-temperature stress

    Energy Technology Data Exchange (ETDEWEB)

    Guo, X.; Zheng, H.; Xue, P.; Shohet, J. L. [Plasma Processing and Technology Laboratory and Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); King, S. W. [Logic Technology Development, Intel Corporation, Hillsboro, Oregon 97124 (United States); Nishi, Y. [Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States)

    2015-01-05

    The effects of vacuum-ultraviolet (VUV) irradiation on copper penetration into non-porous low-k dielectrics under bias-temperature stress (BTS) were investigated. By employing x-ray photoelectron spectroscopy depth-profile measurements on both as-deposited and VUV-irradiated SiCOH/Cu stacks, it was found that under the same BTS conditions, the diffusion depth of Cu into the VUV-irradiated SiCOH is higher than that of as-deposited SiCOH. On the other hand, under the same temperature-annealing stress (TS) without electric bias, the Cu distribution profiles in the VUV-irradiated SiCOH were same with that for the as-deposited SiCOH. The experiments suggest that in as-deposited SiCOH, the diffused Cu exists primarily in the atomic state, while in VUV-irradiated SiCOH, the diffused Cu is oxidized by the hydroxyl ions (OH{sup −}) generated from VUV irradiation and exists in the ionic state. The mechanisms for metal diffusion and ion injection in VUV irradiated low-k dielectrics are discussed.

  13. Brillouin light scattering studies of the mechanical properties of ultrathin low-k dielectric films

    Science.gov (United States)

    Link, A.; Sooryakumar, R.; Bandhu, R. S.; Antonelli, G. A.

    2006-07-01

    In an effort to reduce RC time delays that accompany decreasing feature sizes, low-k dielectric films are rapidly emerging as potential replacements for silicon dioxide (SiO2) at the interconnect level in integrated circuits. The main challenge in low-k materials is their substantially weaker mechanical properties that accompany the increasing pore volume content needed to reduce k. We show that Brillouin light scattering is an excellent nondestructive technique to monitor and characterize the mechanical properties of these porous films at thicknesses well below 200nm that are pertinent to present applications. Observation of longitudinal and transverse standing wave acoustic resonances and the dispersion that accompany their transformation into traveling waves with finite in-plane wave vectors provides for a direct measure of the principal elastic constants that completely characterize the mechanical properties of these ultrathin films. The mode amplitudes of the standing waves, their variation within the film, and the calculated Brillouin intensities account for most aspects of the spectra. We further show that the values obtained by this method agree well with other experimental techniques such as nanoindentation and picosecond laser ultrasonics.

  14. Mechanical reliability of porous low-k dielectrics for advanced interconnect: Study of the instability mechanisms in porous low-k dielectrics and their mediation through inert plasma induced re-polymerization of the backbone structure

    Science.gov (United States)

    Sa, Yoonki

    Continuous scaling down of critical dimensions in interconnect structures requires the use of ultralow dielectric constant (k) films as interlayer dielectrics to reduce resistance-capacitance delays. Porous carbon-doped silicon oxide (p-SiCOH) dielectrics have been the leading approach to produce these ultralow-k materials. However, embedding of porosity into dielectric layer necessarily decreases the mechanical reliability and increases its susceptibility to adsorption of potentially deleterious chemical species during device fabrication process. Among those, exposure of porous-SiCOH low-k (PLK) dielectrics to oxidizing plasma environment causes the increase in dielectric constant and their vulnerability to mechanical instability of PLKs due to the loss of methyl species and increase in moisture uptake. These changes in PLK properties and physical stability have been persisting challenges for next-generation interconnects because they are the sources of failure in interconnect integration as well as functional and physical failures appearing later in IC device manufacturing. It is therefore essential to study the fundamentals of the interactions on p-SiCOH matrix induced by plasma exposure and find an effective and easy-to-implement way to reverse such changes by repairing damage in PLK structure. From these perspectives, the present dissertation proposes 1) a fundamental understanding of structural transformation occurring during oxidative plasma exposure in PLK matrix structure and 2) its restoration by using silylating treatment, soft x-ray and inert Ar-plasma radiation, respectively. Equally important, 3) as an alternative way of increasing the thermo-mechanical reliability, PLK dielectric film with an intrinsically robust structure by controlling pore morphology is fabricated and investigated. Based on the investigations, stability of PLK films studied by time-dependent ball indentation tester under the elevated temperature, variation in film thickness and

  15. Correlation between stress-induced leakage current and dielectric degradation in ultra-porous SiOCH low-k materials

    Energy Technology Data Exchange (ETDEWEB)

    Wu, C., E-mail: Chen.Wu@imec.be; De Wolf, I. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Department of Materials Engineering, KU Leuven, 3000 Leuven (Belgium); Li, Y.; Leśniewska, A.; Varela Pedreira, O.; Marneffe, J.-F. de; Ciofi, I.; Verdonck, P.; Baklanov, M. R.; Bömmels, J.; Tőkei, Zs.; Croes, K. [imec, Kapeldreef 75, 3001 Leuven (Belgium)

    2015-10-28

    Stress-Induced Leakage Current (SILC) behavior during the dielectric degradation of ultra-porous SiOCH low-k materials was investigated. Under high voltage stress, SILC increases to a critical value before final hard breakdown. This SILC increase rate is mainly driven by the injected charges and is negligibly influenced by temperature and voltage. SILC is found to be transient and shows a t{sup −1} relaxation behavior, where t is the storage time at low voltages. This t{sup −1} transient behavior, described by the tunneling front model, is caused by both electron charging of neutral defects in the dielectric close to the cathode interface and discharging of donor defects close to the anode interface. These defects have a uniform density distribution within the probed depth range, which is confirmed by the observed flat band voltage shift results collected during the low voltage storage. By applying an additional discharging step after the low voltage storage, the trap energies and spatial distributions are derived. In a highly degraded low-k dielectric, the majority of defects have a trap depth between 3.4 eV and 3.6 eV and a density level of 1 × 10{sup 18 }eV{sup −1 }cm{sup −3}. The relation between the defect density N and the total amount of the injected charges Q is measured to be sub-linear, N ∼ Q{sup 0.45±0.07}. The physical nature of these stress-induced defects is suggested to be caused by the degradation of the Si-O based skeleton in the low-k dielectric.

  16. Polyhedral oligomeric silsequioxane monolayer as a nanoporous interlayer for preparation of low-k dielectric films

    International Nuclear Information System (INIS)

    Liu, Y-L; Liu, C-S; Cho, C-I; Hwu, M-J

    2007-01-01

    Polyhedral oligomeric silsequioxane (POSS) monomer was fixed to a silicon surface by reacting octakis(glycidyldimethylsiloxy)octasilsesquioxane (OG-POSS) with the OH-terminated silicon surface in the presence of tin (II) chloride. The POSS cage layer then served as a nanoporous interlayer to reduce the dielectric constants of polyimide films on silicon surfaces. The chemical structure and surface morphology of OG-POSS modified silicon surfaces were characterized with XPS. With the introduction of a POSS nanopored interlayer, the dielectric constants of polyimide films were reduced

  17. Investigation of the dielectric properties of shale

    International Nuclear Information System (INIS)

    Martemyanov, Sergey M.

    2011-01-01

    The article is dedicated to investigation of the dielectric properties of oil shale. Investigations for samples prepared from shale mined at the deposit in Jilin Province in China were done. The temperature and frequency dependences of rock characteristics needed to calculate the processes of their thermal processing are investigated. Frequency dependences for the relative dielectric constant and dissipation factor of rock in the frequency range from 0,1 Hz to 1 MHz are investigated. The temperature dependences for rock resistance, dielectric capacitance and dissipation factor in the temperature range from 20 to 600°C are studied. Key words: shale, dielectric properties, relative dielectric constant, dissipation factor, temperature dependence, frequency dependence

  18. Surface roughening of silicon, thermal silicon dioxide, and low-k dielectric coral films in argon plasma

    International Nuclear Information System (INIS)

    Yin Yunpeng; Sawin, Herbert H.

    2008-01-01

    The surface roughness evolutions of single crystal silicon, thermal silicon dioxide (SiO 2 ), and low dielectric constant film coral in argon plasma have been measured by atomic force microscopy as a function of ion bombardment energy, ion impingement angle, and etching time in an inductively coupled plasma beam chamber, in which the plasma chemistry, ion energy, ion flux, and ion incident angle can be adjusted independently. The sputtering yield (or etching rate) scales linearly with the square root of ion energy at normal impingement angle; additionally, the angular dependence of the etching yield of all films in argon plasma followed the typical sputtering yield curve, with a maximum around 60 deg. -70 deg. off-normal angle. All films stayed smooth after etching at normal angle but typically became rougher at grazing angles. In particular, at grazing angles the rms roughness level of all films increased if more material was removed; additionally, the striation structure formed at grazing angles can be either parallel or transverse to the beam impingement direction, which depends on the off-normal angle. More interestingly, the sputtering caused roughness evolution at different off-normal angles can be qualitatively explained by the corresponding angular dependent etching yield curve. In addition, the roughening at grazing angles is a strong function of the type of surface; specifically, coral suffers greater roughening compared to thermal silicon dioxide

  19. Numerical investigation of dielectric barrier discharges

    Science.gov (United States)

    Li, Jing

    1997-12-01

    A dielectric barrier discharge (DBD) is a transient discharge occurring between two electrodes in coaxial or planar arrangements separated by one or two layers of dielectric material. The charge accumulated on the dielectric barrier generates a field in a direction opposite to the applied field. The discharge is quenched before an arc is formed. It is one of the few non-thermal discharges that operates at atmospheric pressure and has the potential for use in pollution control. In this work, a numerical model of the dielectric barrier discharge is developed, along with the numerical approach. Adaptive grids based on the charge distribution is used. A self-consistent method is used to solve for the electric field and charge densities. The Successive Overrelaxation (SOR) method in a non-uniform grid spacing is used to solve the Poisson's equation in the cylindrically-symmetric coordinate. The Flux Corrected Transport (FCT) method is modified to solve the continuity equations in the non-uniform grid spacing. Parametric studies of dielectric barrier discharges are conducted. General characteristics of dielectric barrier discharges in both anode-directed and cathode-directed streamer are studied. Effects of the dielectric capacitance, the applied field, the resistance in external circuit and the type of gases (O2, air, N2) are investigated. We conclude that the SOR method in an adaptive grid spacing for the solution of the Poisson's equation in the cylindrically-symmetric coordinate is convergent and effective. The dielectric capacitance has little effect on the g-factor of radical production, but it determines the strength of the dielectric barrier discharge. The applied field and the type of gases used have a significant role on the current peak, current pulse duration and radical generation efficiency, discharge strength, and microstreamer radius, whereas the external series resistance has very little effect on the streamer properties. The results are helpful in

  20. Structural and composition investigations at delayered locations of low k integrated circuit device by gas-assisted focused ion beam

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Dandan, E-mail: dandan.wang@globalfoundries.com; Kee Tan, Pik; Yamin Huang, Maggie; Lam, Jeffrey; Mai, Zhihong [Technology Development Department, GLOBALFOUNDRIES Singapore Pte. Ltd., 60 Woodlands Industrial Park D, Street 2, Singapore 738406 (Singapore)

    2014-05-15

    The authors report a new delayering technique – gas-assisted focused ion beam (FIB) method and its effects on the top layer materials of integrated circuit (IC) device. It demonstrates a highly efficient failure analysis with investigations on the precise location. After removing the dielectric layers under the bombardment of an ion beam, the chemical composition of the top layer was altered with the reduced oxygen content. Further energy-dispersive x-ray spectroscopy and Fourier transform infrared analysis revealed that the oxygen reduction lead to appreciable silicon suboxide formation. Our findings with structural and composition alteration of dielectric layer after FIB delayering open up a new insight avenue for the failure analysis in IC devices.

  1. Surface sealing using self-assembled monolayers and its effect on metal diffusion in porous low-k dielectrics studied using monoenergetic positron beams

    International Nuclear Information System (INIS)

    Uedono, Akira; Armini, Silvia; Zhang, Yu; Kakizaki, Takeaki; Krause-Rehberg, Reinhard; Anwand, Wolfgang; Wagner, Andreas

    2016-01-01

    Graphical abstract: - Highlights: • Pores with cubic pore side lengths of 1.1 and 3.1 nm coexisted in the low-k film. • For the sample without the SAM sealing process, metal atoms diffused from the top Cu/MnN layer into the OSG film and were trapped by the pores. Almost all pore interiors were covered by those metals. • For the sample damaged by a plasma etch treatment before the SAM sealing process, self-assembled molecules diffused into the OSG film, and they were preferentially trapped by larger pores. - Abstract: Surface sealing effects on the diffusion of metal atoms in porous organosilicate glass (OSG) films were studied by monoenergetic positron beams. For a Cu(5 nm)/MnN(3 nm)/OSG(130 nm) sample fabricated with pore stuffing, C_4F_8 plasma etch, unstuffing, and a self-assembled monolayer (SAM) sealing process, it was found that pores with cubic pore side lengths of 1.1 and 3.1 nm coexisted in the OSG film. For the sample without the SAM sealing process, metal (Cu and Mn) atoms diffused from the top Cu/MnN layer into the OSG film and were trapped by the pores. As a result, almost all pore interiors were covered with those metals. For the sample damaged by an Ar/C_4F_8 plasma etch treatment before the SAM sealing process, SAMs diffused into the OSG film, and they were preferentially trapped by larger pores. The cubic pore side length in these pores containing self-assembled molecules was estimated to be 0.7 nm. Through this work, we have demonstrated that monoenergetic positron beams are a powerful tool for characterizing capped porous films and the trapping of atoms and molecules by pores.

  2. Investigation of High-k Dielectrics and Metal Gate Electrodes for Non-volatile Memory Applications

    Science.gov (United States)

    Jayanti, Srikant

    Due to the increasing demand of non-volatile flash memories in the portable electronics, the device structures need to be scaled down drastically. However, the scalability of traditional floating gate structures beyond 20 nm NAND flash technology node is uncertain. In this regard, the use of metal gates and high-k dielectrics as the gate and interpoly dielectrics respectively, seem to be promising substitutes in order to continue the flash scaling beyond 20nm. Furthermore, research of novel memory structures to overcome the scaling challenges need to be explored. Through this work, the use of high-k dielectrics as IPDs in a memory structure has been studied. For this purpose, IPD process optimization and barrier engineering were explored to determine and improve the memory performance. Specifically, the concept of high-k / low-k barrier engineering was studied in corroboration with simulations. In addition, a novel memory structure comprising a continuous metal floating gate was investigated in combination with high-k blocking oxides. Integration of thin metal FGs and high-k dielectrics into a dual floating gate memory structure to result in both volatile and non-volatile modes of operation has been demonstrated, for plausible application in future unified memory architectures. The electrical characterization was performed on simple MIS/MIM and memory capacitors, fabricated through CMOS compatible processes. Various analytical characterization techniques were done to gain more insight into the material behavior of the layers in the device structure. In the first part of this study, interfacial engineering was investigated by exploring La2O3 as SiO2 scavenging layer. Through the silicate formation, the consumption of low-k SiO2 was controlled and resulted in a significant improvement in dielectric leakage. The performance improvement was also gauged through memory capacitors. In the second part of the study, a novel memory structure consisting of continuous metal FG

  3. The effect of water uptake on the mechanical properties of low-k organosilica glass

    Science.gov (United States)

    X. Guo; J.E. Jakes; M.T. Nichols; S. Banna; Y. Nishi; J.L. Shohet

    2013-01-01

    Water uptake in porous low-k dielectrics has become a significant challenge for both back-end-of line integration and circuit reliability. The influence of absorbed water on the mechanical properties of plasma-enhanced chemical-vapor-deposited organosilicate glasses (SiCOH) was investigated with nanoindentation. The roles of physisorbed (α-...

  4. Investigation of radiative charging of dielectrics irradiated by ions

    International Nuclear Information System (INIS)

    Dergobuzov, K.A.; Yalovets, A.P.

    1994-01-01

    Within the framework of the Gusel'nikov mathematical model are fulflled numerical investigations of charging dielectrics irradiated with ions and atoms. The model accounts for dynamics of quasi-free charge carriers of each sign with account of processes of dielectrics ionization with a beam, charge recombination and charge drift in an electric fields. The effective mobility of charge carriers is determined with account for its dependence on the dose rate

  5. Combination of laser correlation and dielectric spectroscopy in albumin investigations

    International Nuclear Information System (INIS)

    Nepomnyashchaya, E; Cheremiskina, A; Velichko, E; Aksenov, E; Bogomaz, T

    2015-01-01

    Joint use of laser correlation and dielectric spectroscopies for studies of biomolecular properties of albumin in water solution is considered. The conditions and parameters of the experiments are discussed. Similar behaviours of albumin molecular sizes and maximum frequency of peak of dielectric dissipation factor with increasing acidity were revealed. Using the suggested approach, biomolecular aggregation dynamics and changes in electrophysical properties on transition from one molecular structure to another may be investigated. (paper)

  6. Investigation of ball bond integrity for 0.8 mil (20 microns) diameter gold bonding wire on low k die in wire bonding technology

    Science.gov (United States)

    Kudtarkar, Santosh Anil

    Microelectronics technology has been undergoing continuous scaling to accommodate customer driven demand for smaller, faster and cheaper products. This demand has been satisfied by using novel materials, design techniques and processes. This results in challenges for the chip connection technology and also the package technology. The focus of this research endeavor was restricted to wire bond interconnect technology using gold bonding wires. Wire bond technology is often regarded as a simple first level interconnection technique. In reality, however, this is a complex process that requires a thorough understanding of the interactions between the design, material and process variables, and their impact on the reliability of the bond formed during this process. This research endeavor primarily focused on low diameter, 0.8 mil thick (20 mum) diameter gold bonding wire. Within the scope of this research, the integrity of the ball bond formed by 1.0 mil (25 mum) and 0.8 mil (20 mum) diameter wires was compared. This was followed by the evaluation of bonds formed on bond pads having doped SiO2 (low k) as underlying structures. In addition, the effect of varying the percentage of the wire dopant, palladium and bonding process parameters (bonding force, bond time, ultrasonic energy) for 0.8 mil (20 mum) bonding wire was also evaluated. Finally, a degradation empirical model was developed to understand the decrease in the wire strength. This research effort helped to develop a fundamental understanding of the various factors affecting the reliability of a ball bond from a design (low diameter bonding wire), material (low k and bonding wire dopants), and process (wire bonding process parameters) perspective for a first level interconnection technique, namely wire bonding. The significance of this research endeavor was the systematic investigation of the ball bonds formed using 0.8 mil (20 microm) gold bonding wire within the wire bonding arena. This research addressed low k

  7. An experimental investigation of the dielectric properties of electrorheological fluids

    International Nuclear Information System (INIS)

    Sun, Y; Thomas, M; Masounave, J

    2009-01-01

    A home-made electrorheological (ER) fluid, known as ETSERF, has been created with suspension-based powders dispersed in silicone oil. Because of the special structure of their particles, ETSERF suspensions present a complex behavior. In the absence of an electric field, the ETSERF fluid manifests a near-Newtonian behavior, but when an electric field is applied, it exhibits a pseudoplastic behavior with yield stress. The ER effect under DC electric fields has been experimentally investigated using both hydrous and anhydrous ER fluids. The ER properties are strongly dependent on the dielectric properties of ETSERF suspensions, and hydrous ER fluids have a high dielectric constant and a high relaxation frequency which show a strong electrorheological effect. The relationship between the electrorheological effect and the permittivity of ER fluids has also been extensively studied. Experimental results show that the interfacial polarization plays an important role in the electrorheological phenomenon. The ageing of ETSERF fluids was also studied and it was found that the dielectric properties (mainly the dielectric loss tangent) and ER properties are strongly related to the duration of ageing. A fresh ETSERF suspension exhibits high relaxation frequency and high dielectric constant. These results are mainly explained by the effect of interfacial polarizations

  8. Investigations on perturbations of microwave dielectric resonator thermometer

    International Nuclear Information System (INIS)

    Yu, Lili; Zhang, Guangming; Fernicola, V; Lu, Jinchuan

    2017-01-01

    Investigations of antenna probe length, antenna-dielectric distance, cavity filling and humidity on microwave resonator thermometer with respect to Q , spurious mode depression, coupling strength, accuracy, shock resistance or sensitivity were carried out in order to improve the dielectric resonator thermometer performance. Significant improvement of Q and depression of spurious mode coupling were obtained when the antenna length was reduced. It also turns out that the Q and spurious mode coupling strength vary with the distance between dielectric and antenna pin, as well under appropriate antenna length. Filling the cavity with nitrogen increases coupling strength but decrease frequency-temperature sensitivity compared to a vacuum-pumped cavity. Besides, preliminary results on the microwave resonator sensitivity to air humidity were obtained. (technical note)

  9. Effects of plasma and vacuum-ultraviolet exposure on the mechanical properties of low-k porous organosilicate glass

    Science.gov (United States)

    X. Guo; J.E. Jakes; S. Banna; Y. Nishi; J.L. Shohet

    2014-01-01

    The effects of plasma exposure and vacuum-ultraviolet (VUV) irradiation on the mechanical properties of low-k porous organosilicate glass (SiCOH) dielectric films were investigated. Nanoindentation measurements were made on SiCOH films before and after exposure to an electron-cyclotron-resonance plasma or a monochromatic synchrotron VUV beam, to determine the changes...

  10. Investigation of some properties of the dielectric particle detector

    Energy Technology Data Exchange (ETDEWEB)

    Gavalyan, V.G.; Gukasyan, S.M.; Kavalov, R.L.; Karapetyan, R.A.; Lorikyan, M.P. (Erevanskij Fizicheskij Inst. (USSR))

    1981-01-01

    Results of investigation into temporary dispersion and amplitude resolution of a dielectric detector (DD) of particles are given. In this detector secondary electrons produced by a particle passing through a dielectric layer are gathered on thin anode filaments strenched inside the dielectric layer. As a working substance of the detector investigated used was CsI having 1.7% relative density of monocrystal, gap between planes of 20 ..mu..m diameter anode filaments and cathode electrodes was approximately equal to 200 ..mu..m, distance between anode filaments was approximately 250 ..mu..m. DD having working area S=5 cm/sup 2/ was placed at a distance of 2 cm from 5 MeV radioactive alpha source of 10/sup 4/ particle/s intensity. Curve of particle detection efficiency for this detector reached plateau at a level of 100% in the range of working voltages from 800 to 1200 V. Coincidence method together with a time-amplitude converter, at inlets of which applied were pulses from DD and a scintillation counter placed under DD, were used to measure temporary dispersion. Data on behaviour of particle registration efficiency depending on time of continuous effect of working and inverse voltages are given. It is found that temporary dispersion of the DD and scintillation counter system is a value of order of 1 ns and amplitude resolution of DD is an order of 100%.

  11. Ultra low-K shrinkage behavior when under electron beam in a scanning electron microscope

    Energy Technology Data Exchange (ETDEWEB)

    Lorut, F.; Imbert, G. [ST Microelectronics, 850 rue Jean Monnet, 38926 Crolles Cedex (France); Roggero, A. [Centre National d' Etudes Spatiales, 18 Avenue Edouard Belin, 31400 Toulouse (France)

    2013-08-28

    In this paper, we investigate the tendency of porous low-K dielectrics (also named Ultra Low-K, ULK) behavior to shrink when exposed to the electron beam of a scanning electron microscope. Various experimental electron beam conditions have been used for irradiating ULK thin films, and the resulting shrinkage has been measured through use of an atomic force microscope tool. We report the shrinkage to be a fast, cumulative, and dose dependent effect. Correlation of the shrinkage with incident electron beam energy loss has also been evidenced. The chemical modification of the ULK films within the interaction volume has been demonstrated, with a densification of the layer and a loss of carbon and hydrogen elements being observed.

  12. Effect of water uptake on the fracture behavior of low-k organosilicate glass

    Science.gov (United States)

    Xiangyu Guo; Joseph E. Jakes; Samer Banna; Yoshio Nishi; J. Leon Shohet

    2014-01-01

    Water uptake in porous low-k dielectrics has become a significant challenge for both back-end-of-the-line integration and circuit reliability. This work examines the effects of water uptake on the fracture behavior of nanoporous low-k organosilicate glass. By using annealing dehydration and humidity conditioning, the roles of different water types...

  13. Investigation of Vacuum Insulator Surface Dielectric Strength with Nanosecond Pulses

    International Nuclear Information System (INIS)

    Nunnally, W.C.; Krogh, M.; Williams, C.; Trimble, D.; Sampayan, S.; Caporaso, G.

    2003-01-01

    The maximum vacuum insulator surface dielectric strength determines the acceleration electric field gradient possible in a short pulse accelerator. Previous work has indicated that higher electric field strengths along the insulator-vacuum interface might be obtained as the pulse duration is decreased. In this work, a 250 kV, single ns wide impulse source was applied to small diameter, segmented insulators samples in a vacuum to evaluate the multi-layer surface dielectric strength of the sample construction. Resonances in the low inductance test geometry were used to obtain unipolar, pulsed electric fields in excess of 100 MV/m on the insulator surface. The sample construction, experimental arrangement and experimental results are presented for the initial data in this work. Modeling of the multi-layer structure is discussed and methods of improving insulator surface dielectric strength in a vacuum are proposed

  14. Investigation of beta dielectric dispersion in Bovine yellow bone ...

    African Journals Online (AJOL)

    This technique makes use of a marconi magnification meter TF 1245 working in conjunction with a radio frequently oscillator TF 1246. In general the tissue exhibited a decrease in dielectric constant, ε΄ with increase in frequency until a lower steady value was attained at high frequency. JONAMP Vol. 11 2007: pp. 461-466 ...

  15. Positron annihilation lifetime spectroscopy (PALS) application in metal barrier layer integrity for porous low- k materials

    CERN Document Server

    Simon, Lin; Gidley, D W; Wetzel, J T; Monnig, K A; Ryan, E T; Simon, Jang; Douglas, Yu; Liang, M S; En, W G; Jones, E C; Sturm, J C; Chan, M J; Tiwari, S C; Hirose, M

    2002-01-01

    Positron Annihilation Lifetime Spectroscopy (PALS) is a useful tool to pre-screen metal barrier integrity for Si-based porous low-k dielectrics. Pore size of low-k, thickness of metal barrier Ta, positronium (Ps) leakage from PALS, trench sidewall morphology, electrical test from one level metal (1LM) pattern wafer and Cu diffusion analysis were all correlated. Macro-porous low-k (pore size >=200 AA) and large scale meso-porous low-k (>50~200 AA) encounter both Ps leakage and Cu diffusion into low-k dielectric in the 0.25 mu mL/0.3 mu mS structures when using SEMATECH in-house PVD Ta 250 AA as barrier layer. For small scale meso-porous (>20~50 AA) and micro- porous (<=20 AA) low-k, no Ps leakage and no Cu diffusion into low-k were observed even with PVD Ta 50 AA, which is proved also owing to sidewall densification to seal all sidewall pores due to plasma etch and ash. For future technology, smaller pore size of porous Si-based low-k (=<50 AA) will be preferential for dense low-k like trench sidewall to...

  16. Relaxations and fast dynamics of the plastic crystal cyclo-octanol investigated by broadband dielectric spectroscopy

    OpenAIRE

    Lunkenheimer, Peter

    1997-01-01

    Relaxations and fast dynamics of the plastic crystal cyclo-octanol investigated by broadband dielectric spectroscopy / R. Brand, P. Lunkenheimer, A. Loidl. - In: Physical review. B. 56. 1997. S. R5713-R5716

  17. Broadband dielectric spectroscopy and calorimetric investigations of D-lyxose.

    Science.gov (United States)

    Singh, Lokendra P; Alegría, A; Colmenero, J

    2011-10-18

    Using broadband dielectric spectroscopy, we have studied different types of relaxation processes, namely, primary (α), secondary (β), and another sub-T(g) process called γ-process, in the supercooled state of D-lyxose, over a wide frequency (10(-2)-10(9) Hz) and temperature range (120-340 K). In addition, the same sample was analyzed by differential scanning calorimeter. The temperature dependence of the relaxation times as well as the dielectric strength of different processes has been critically examined. It has been observed that the slower secondary relaxation (designated as β-) process shifts to lower frequencies with increasing applied pressure, but not the faster one. This pressure dependence indicates that the observed slower secondary relaxation (β-) is Johari-Goldstein relaxation process and faster one (γ-process) is probably the rotation of hydroxymethyl (-CH(2)OH) side group attached to the sugar ring, that is, of intramolecular origin. Copyright © 2011 Elsevier Ltd. All rights reserved.

  18. Influence of the ion bombardment of O{sub 2} plasmas on low-k materials

    Energy Technology Data Exchange (ETDEWEB)

    Verdonck, Patrick, E-mail: verdonck@imec.be [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Samara, Vladimir [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Open University, Materials Engineering, Walton Hall, Milton Keynes MK7 6AA (United Kingdom); Goodyear, Alec [Open University, Materials Engineering, Walton Hall, Milton Keynes MK7 6AA (United Kingdom); Ferchichi, Abdelkarim; Van Besien, Els; Baklanov, Mikhail R. [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Braithwaite, Nicholas [Open University, Department of Physics and Astronomy, Walton Hall, Milton Keynes MK7 6AA (United Kingdom)

    2011-10-31

    In this study, special tests were devised in order to investigate the influence of ion bombardment on the damage induced in low-k dielectrics by oxygen plasmas. By placing a sample that suffered a lot of ion bombardment and one which suffered little ion bombardment simultaneously in the same plasma, it was possible to verify that ion bombardment in fact helped to protect the low-k film against oxygen plasma induced damage. Exhaustive analyses (ellipsometry, X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, porosimetry, capacitance-voltage (C-V) measurements, water contact angle analysis) show that ion bombardment induced the formation of a denser top layer in the film, which then hampered further penetration of active oxygen species deeper into the bulk. This was further confirmed by other tests combining capacitively and inductively coupled plasmas. Therefore, it was possible to conclude that, at least for these plasmas, ion bombardment may help to reduce plasma induced damage to low-k materials.

  19. Dielectric properties investigation of Cu2O/ZnO heterojunction thin films by electrodeposition

    International Nuclear Information System (INIS)

    Li, Qiang; Xu, Mengmeng; Fan, Huiqing; Wang, Hairong; Peng, Biaolin; Long, Changbai; Zhai, Yuchun

    2013-01-01

    Highlights: ► Bottom-up self-assembly Cu 2 O/ZnO heterojunction was fabricated by electrochemical deposition on indium tin oxide (ITO) flexible substrate (polyethylene terephthalate-PET). ► The dielectric response of Cu 2 O/ZnO heterojunction thin films had been investigated. ► The universal dielectric response was used to investigate the hopping behavior in Cu 2 O/ZnO heterojunction. -- Abstract: Structures and morphologies of the Cu 2 O/ZnO heterojunction electrodeposited on indium tin oxide (ITO) flexible substrate (polyethylene terephthalate-PET) were investigated by X-ray diffraction (XRD), scanning electronic microscopy (SEM), high resolution transmission electron microscopy (HRTEM), respectively. The dielectric response of bottom-up self-assembly Cu 2 O/ZnO heterojunction was investigated. The low frequency dielectric dispersion (LFDD) was observed. The universal dielectric response (UDR) was used to investigate the frequency dependence of dielectric response for Cu 2 O/ZnO heterojunction, which was attributed to the long range and the short range hopping charge carriers at the low frequency and the high frequency region, respectively

  20. Investigation via numerical simulation of limiting currents in the presence of dielectric loads

    International Nuclear Information System (INIS)

    Baedke, W. C.

    2009-01-01

    An investigation of the space-charge-limited currents for unneutralized relativistic particle beams drifting through a dielectrically loaded cylindrical conductor is presented. The first limiting current expression investigated assumes a uniform axial velocity profile, is commonly found in the literature, and has been applied to solid and annular beams with and without a dielectric present. The second limiting current expression investigated is self-consistent and is developed for annular beams in the presence of a dielectric load provided that the beams' inner and outer radii are less than the dielectric inner radius. Comparing both of these expressions to particle-in-cell simulations shows that the first expression under predicts the limiting current by no more than 20% and no less than 10% for all geometries and relativistic mass factors considered. It is also shown that the second expression over predicts the limiting current for all scenarios investigated by as much as 20% and in certain cases only a few percent. In addition, estimates for the accumulated charge densities at the vacuum-dielectric interface are presented and the possibility of breakdown within the dielectric is addressed.

  1. Effects of cesium ion-implantation on mechanical and electrical properties of organosilicate low-k films

    Energy Technology Data Exchange (ETDEWEB)

    Li, W.; Pei, D.; Guo, X.; Cheng, M. K.; Lee, S.; Shohet, J. L. [Plasma Processing and Technology Laboratory, Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Lin, Q. [IBM T.J. Watson Research Center, Yorktown Heights, New York 10598 (United States); King, S. W. [Intel Corporation, Hillsboro, Oregon 97124 (United States)

    2016-05-16

    The effects of cesium (Cs) ion-implantation on uncured plasma-enhanced chemical-vapor-deposited organosilicate low dielectric constant (low-k) (SiCOH) films have been investigated and compared with an ultraviolet (UV) cured film. The mechanical properties, including the elastic modulus and hardness, of the SiCOH low-k films are improved by up to 30% with Cs implantation, and further up to 52% after annealing at 400 °C in a N{sub 2} ambient for 1 h. These improvements are either comparable to or better than the effects of UV-curing. They are attributed to an enhancement of the Si-O-Si network structure. The k-value of the SiCOH films increased slightly after Cs implantation, and increased further after annealing. These increases are attributed to two carbon-loss mechanisms, i.e., the carbon loss due to Si-CH{sub 3} bond breakage from implanted Cs ions, and the carbon loss due to oxidation during the annealing. The time-zero dielectric breakdown strength was improved after the Cs implantation and the annealing, and was better than the UV-cured sample. These results indicate that Cs ion implantation could be a supplement to or a substitution for the currently used UV curing method for processing SiCOH low-k films.

  2. Characterization of spin-on-glass very-low-k polymethylsiloxane with copper metallization

    International Nuclear Information System (INIS)

    Aw, K.C.; Salim, N.T.; Gao, W.; Li, Z.

    2006-01-01

    Cu diffusion is one major problem that inhibits low-k dielectric to be integrated with existing fabrication technology effectively. This paper demonstrates the effects of surface modification towards polymethylsiloxane low-k dielectric (LKD 5109) from JSR Micro using gas mixture of H 2 + N 2 plasma in order to improve Cu diffusion barrier. C-V plots indirectly indicated that plasma treatment reduces Cu + ions penetration during Cu deposition using magnetron sputtering. XPS confirmed that short duration (10 to 30 s) of H 2 + N 2 plasma treatment could cause surface densification of LKD 5109 low-k thin film through formation of N-C bonds. However, the negative effect of plasma treatment is the increment of dielectric constant (k) due to possible surface densification

  3. Experimental and modelling investigations of a dielectric barrier discharge in low-pressure argon

    International Nuclear Information System (INIS)

    Wagenaars, E; Brandenburg, R; Brok, W J M; Bowden, M D; Wagner, H-E

    2006-01-01

    The discharge behaviour of a dielectric barrier discharge (DBD) in low-pressure argon gas was investigated by experiments and modelling. The electrical characteristics and light emission dynamics of the discharge were measured and compared with the results of a two-dimensional fluid model. Our investigations showed that the discharge consisted of a single, diffuse discharge per voltage half-cycle. The breakdown phase of the low-pressure DBD (LPDBD) was investigated to be similar to the ignition phase of a low-pressure glow discharge without dielectrics, described by Townsend breakdown theory. The stable discharge phase of the LPDBD also showed a plasma structure with features similar to those of a classical glow discharge. The presence of the dielectric in the discharge gap led to the discharge quenching and thus the decay of the plasma. Additionally, the argon metastable density was monitored by measuring light emission from nitrogen impurities. A metastable density of about 5 x 10 17 m -3 was present during the entire voltage cycle, with only a small (∼10%) increase during the discharge. Finally, a reduction of the applied voltage to the minimum required to sustain the discharge led to a further reduction of the role of the dielectric. The discharge was no longer quenched by the dielectrics only but also by a reduction of the applied voltage

  4. Surface reactions during low-k etching using H2/N2 plasma

    International Nuclear Information System (INIS)

    Fukasawa, Masanaga; Tatsumi, Tetsuya; Oshima, Keiji; Nagahata, Kazunori; Uchida, Saburo; Takashima, Seigo; Hori, Masaru; Kamide, Yukihiro

    2008-01-01

    We investigated the relationship between the hard mask faceting that occurs during organic low-k etching and the ion energy distribution function of a capacitively coupled plasma reactor. We minimized the hard mask faceting by precisely controlling the ion energy. This precise control was obtained by selecting the optimum bottom frequency and bias power. We measured the amount of damage done to a SiOCH film exposed to H 2 /N 2 plasma in order to find the H 2 /N 2 ratio at which the plasma caused the least damage. The amount of moisture uptake by the damaged SiOCH film is the dominant factor controlling the dielectric constant increase (Δk). To suppress Δk, the incident ion species and ion energies have to be precisely controlled. This reduces the number of adsorption sites in the bulk SiOCH and maintains the hydrophobic surface that suppresses water permeation during air exposure

  5. Investigation of NOx Reduction by Low Temperature Oxidation Using Ozone Produced by Dielectric Barrier Discharge

    DEFF Research Database (Denmark)

    Stamate, Eugen; Irimiea, Cornelia; Salewski, Mirko

    2013-01-01

    NOx reduction by low temperature oxidation using ozone produced by a dielectric barrier discharge generator is investigated for different process parameters in a 6m long reactor in serpentine arrangement using synthetic dry flue gas with NOx levels below 500 ppm, flows up to 50 slm and temperatures...

  6. Experimental investigation on NOx removal using pulsed dielectric barrier discharges in combination with catalysts

    NARCIS (Netherlands)

    Chirumamilla, V.R.; Hoeben, W.F.L.M.; Beckers, F.J.C.M.; Huiskamp, T.; Pemen, A.J.M.

    2015-01-01

    In this study, an experimental investigation of the removal of NOx has been carried out with a dielectric barrier discharge reactor filled with different catalytic materials. NOx removal efficiency and by-products formation were studied as a function of energy density using plasma catalytic

  7. Effects of fluoride residue on thermal stability in Cu/porous low-k interconnects

    Energy Technology Data Exchange (ETDEWEB)

    Kobayashi, Y.; Ozaki, S.; Nakamura, T. [FUJITSU LABORATORIES Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197 (Japan)

    2014-06-19

    We have investigated the effects of fluoride residue on the thermal stability of a Cu/barrier metal (BM)/porous low-k film (k < 2.3) structure. We confirmed that the Cu agglomerated more on a BM/inter layer dielectric (ILD) with a fluoride residue. To consider the effect of fluoride residue on Cu agglomeration, the structural state at the Cu/BM interface was evaluated with a cross-section transmission electron microscope (TEM) and atomic force microscope (AFM). In addition, the chemical bonding state at the Cu/BM interface was evaluated with the interface peeling-off method and X-ray photoelectron spectroscopy (XPS). Moreover, we confirmed the ionization of fluoride residue and oxidation of Cu with fluoride and moisture to clarify the effect of fluoride residue on Cu. Our experimental results indicated that the thermal stability in Cu/porous low-k interconnects was degraded by enhancement of Cu oxidation with fluoride ions diffusion as an oxidizing catalyst.

  8. Investigation of the dielectric recovery in synthetic air in a high voltage circuit breaker

    International Nuclear Information System (INIS)

    Seeger, M; Naidis, G; Steffens, A; Nordborg, H; Claessens, M

    2005-01-01

    The dielectric recovery of an axially blown arc in an experimental set-up based on a conventional HV circuit breaker was investigated both experimentally and theoretically. As a quenching gas, synthetic air was used. The investigated time range was from 10 μs to 10 ms after current zero (CZ). A fast rise in the dielectric strength during the first 100 μs, followed by a plateau and further rise later was observed. The dependences on the breaking current and pressure were determined. The measured dielectric recovery during the first 100 μs after CZ could be reproduced with good accuracy by computational fluid dynamics simulations. From that it could be deduced that the temperature decay in the axis does not depend sensitively on the pressure. The dielectric recovery during the first 100 μs scales therefore mainly with the filling pressure. The plateau in the breakdown characteristic is due to a hot vapour layer from the still evaporating PTFE nozzle surface

  9. SIMS studies of low-K materials

    International Nuclear Information System (INIS)

    Lin Xuefeng; Smith, Stephen P.

    2006-01-01

    We report progress in conducting quantitative SIMS analyses of low-K materials. Electron-beam (e-beam) pre-irradiation of SIMS measurement sites was used to study the e-beam-induced effects on SIMS depth profiling of a porous organosilicate low-K material. Pre-irradiation of the sample surface using the e-beam causes a reduction in the thickness of the low-K film. SIMS profiling was used to sputter to identifiable marker positions within the pre-irradiated film. Physical measurement of the thickness of the remaining film was used to show that the e-beam-induced reduction in thickness occurs uniformly throughout the pre-irradiated film. Exposure of the film to the e-beam prior to SIMS analysis also resulted in minor changes in the composition of the film. However, pre-irradiation of the film is not part of the normal SIMS measurement procedure. We conclude that when the e-beam irradiation is used only for charge compensation during SIMS depth profiling, the SIMS analysis of the low-K material will not be significantly affected

  10. MWCNTs/Resin Nanocomposites: Structural, Thermal, Mechanical and Dielectric Investigation

    Directory of Open Access Journals (Sweden)

    N. D. Alexopoulos

    2015-11-01

    Full Text Available Multi-wall carbon nanotubes (MWCNTs were manufactured, characterized and added to a typical aeronautical resin matrix at different concentrations as nano-reinforcement. The carbon content of produced MWCNTs was determined to be around 98.5% while they consisted of 13-20 wall-layers and their external diameter had an average size in between 20 and 50 nm. MWCNTs were dispersed in an epoxy resin system and tensile specimens for different MWCNTs concentrations were prepared in an open mould. Electrical wiring was attached to the specimens’ surface and surface electrical resistance change was in-situ monitored during monotonic tension till fracture. Performed tensile tests showed that the MWCNTs addition increased both modulus of elasticity and ultimate tensile strength on the nano-composites with a simultaneously dramatic ductility decrease. The MWCNTs addition enhanced the investigated resin matrix with monitoring ability; electrical resistance change of the investigated tensile tests was correlated in the elastic regime with axial nominal strain and the gauge factor of the different MWCNTs concentration specimens were calculated. It was found that lowest MWCNTs concentration gave the best results in terms of piezo-resistivity and simultaneously the least enhancement in the mechanical properties.

  11. Investigation of dielectric constant variations for Malaysians soil species towards its natural background dose

    Science.gov (United States)

    Jafery, Khawarizmi Mohd; Embong, Zaidi; Khee, Yee See; Haimi Dahlan, Samsul; Tajudin, Saiful Azhar Ahmad; Ahmad, Salawati; Kudnie Sahari, Siti; Maxwell, Omeje

    2018-01-01

    The correlation of natural background gamma radiation and real part of the complex relative permittivity (dielectric constant) for various species Malaysian soils was investigated in this research. The sampling sites were chosen randomly according to soils groups that consist of sedentary, alluvial and miscellaneous soil which covered the area of Batu Pahat, Kluang and Johor Bahru, Johor state of Malaysia. There are 11 types of Malaysian soil species that have been studied; namely Peat, Linau-Sedu, Selangor-Kangkong, Kranji, Telemong-Akob-Local Alluvium, Holyrood-Lunas, Batu Anam-Melaka-Tavy, Harimau Tampoi, Kulai-Yong Peng, Rengam-Jerangau, and Steepland soils. In-situ exposure rates of each soil species were measured by using portable gamma survey meter and ex-situ analysis of real part of relative permittivity was performed by using DAK (Dielectric Assessment Kit assist by network analyser). Results revealed that the highest and the lowest background dose rate were 94 ± 26.28 μR hr-1 and 7 ± 0.67 μR hr-1 contributed by Rengam Jerangau and Peat soil species respectively. Meanwhile, dielectric constant measurement, it was performed in the range of frequency between 100 MHz to 3 GHz. The measurements of each soils species dielectric constant are in the range of 1 to 3. At the lower frequencies in the range of 100 MHz to 600 MHz, it was observed that the dielectric constant for each soil species fluctuated and inconsistent. But it remained consistent in plateau form of signal at higher frequency at range above 600 MHz. From the comparison of dielectric properties of each soil at above 600 MHz of frequency, it was found that Rengam-Jerangau soil species give the highest reading and followed by Selangor-Kangkong species. The average dielectric measurement for both Selangor-Kangkong and Rengam-Jerangau soil species are 2.34 and 2.35 respectively. Meanwhile, peat soil species exhibits the lowest dielectric measurement of 1.83. It can be clearly seen that the pattern

  12. Investigation of dielectric breakdown in silica-epoxy nanocomposites using designed interfaces.

    Science.gov (United States)

    Bell, Michael; Krentz, Timothy; Keith Nelson, J; Schadler, Linda; Wu, Ke; Breneman, Curt; Zhao, Su; Hillborg, Henrik; Benicewicz, Brian

    2017-06-01

    Adding nano-sized fillers to epoxy has proven to be an effective method for improving dielectric breakdown strength (DBS). Evidence suggests that dispersion state, as well as chemistry at the filler-matrix interface can play a crucial role in property enhancement. Herein we investigate the contribution of both filler dispersion and surface chemistry on the AC dielectric breakdown strength of silica-epoxy nanocomposites. Ligand engineering was used to synthesize bimodal ligands onto 15nm silica nanoparticles consisting of long epoxy compatible, poly(glycidyl methacrylate) (PGMA) chains, and short, π-conjugated, electroactive surface ligands. Surface initiated RAFT polymerization was used to synthesize multiple graft densities of PGMA chains, ultimately controlling the dispersion of the filler. Thiophene, anthracene, and terthiophene were employed as π-conjugated surface ligands that act as electron traps to mitigate avalanche breakdown. Investigation of the synthesized multifunctional nanoparticles was effective in defining the maximum particle spacing or free space length (L f ) that still leads to property enhancement, as well as giving insight into the effects of varying the electronic nature of the molecules at the interface on breakdown strength. Optimization of the investigated variables was shown to increase the AC dielectric breakdown strength of epoxy composites as much as 34% with only 2wt% silica loading. Copyright © 2017 Elsevier Inc. All rights reserved.

  13. Experimental investigation of the dielectric properties of soil under hydraulic loading

    International Nuclear Information System (INIS)

    Bittner, Tilman; Bore, Thierry; Karlovšek, Jurij; Scheuermann, Alexander; Wagner, Norman

    2017-01-01

    An experimental set-up was developed in order to determine the coupled hydraulic, dielectric and mechanical properties of granular media under hydraulic loading. The set-up consisted of a modified column for permeability tests involving a flow meter and pressure transducers along the sample to quantify the hydraulic gradient. A newly developed open-ended coaxial probe allowed the measurement of the frequency dependent dielectric permittivity of the material under test. The shear strength of the sample within the column was measured using a conventional vane shear device. In this paper, the overall set-up is introduced with focus on the open-ended coaxial probe. The design and calibration of the probe are introduced in detail. A numerical study showed that the sensitive cylindrical volume of the probe was approximately 150 mm in diameter with a depth of 65 mm. An investigation with glass beads showed that the set-up allowed the parameterization of the hydraulic, mechanic and dielectric parameters of granular materials under the influence of vertical flow. A satisfactorily good correlation between porosity and the real part of the dielectric permittivity was detected. The critical hydraulic gradient defining the transition of a fixed bed of particles to fluidization was characterized by a sharp peak in the evolution of the hydraulic conductivity and could easily be determined from the measurements. The shear strength of the material under test reduces linearly with increasing hydraulic gradient. Future investigations will be carried out to provide the required parameterizations for experimental and numerical investigations of the internal erosion of granular media. (paper)

  14. Investigation of optical pump on dielectric tunability in PZT/PT thin film by THz spectroscopy.

    Science.gov (United States)

    Ji, Jie; Luo, Chunya; Rao, Yunkun; Ling, Furi; Yao, Jianquan

    2016-07-11

    The dielectric spectra of single-layer PbTiO3 (PT), single-layer PbZrxTi1-xO3 (PZT) and multilayer PZT/PT thin films under an external optical field were investigated at room temperature by time-domain terahertz (THz) spectroscopy. Results showed that the real part of permittivity increased upon application of an external optical field, which could be interpreted as hardening of the soft mode and increasing of the damping coefficient and oscillator strength. Furthermore, the central mode was observed in the three films. Among the dielectric property of the three thin films studied, the tunability of the PZT/PT superlattice was the largest.

  15. Measuring the diffusion of Ti and Cu in low-k materials for microelectronic devices by EELS, EFTEM and EDX

    International Nuclear Information System (INIS)

    Barnes, J-P; Lafond, D; Guedj, C; Fayolle, M; Meininger, P; Maitrejean, S; David, T; Posseme, N; Bayle-Guillemaud, P; Chabli, Amal

    2006-01-01

    The need to reduce RC delay and cross talk in Cu interconnects means that ultra low-k dielectrics such as porous SiCOH are being integrated into microelectronic devices. Unfortunately porous materials lead to integration issues such as metal diffusion into the porosity of the dielectric, especially when chemical vapour deposition (CVD) methods are used for metal deposition. In our case, the copper anti-diffusion barrier used before Cu deposition is MOCVD TiN. Without an appropriate surface treatment (pore sealing) of the low-k the TiN may diffuse in the porosity. The presence of Ti or Cu in the low-k is deleterious as it can raise the dielectric constant and the leakage current. EFTEM EELS and EDX have been used to map Ti, Cu, O and C as a function of process conditions

  16. Investigation of high- k yttrium copper titanate thin films as alternative gate dielectrics

    International Nuclear Information System (INIS)

    Monteduro, Anna Grazia; Ameer, Zoobia; Rizzato, Silvia; Martino, Maurizio; Caricato, Anna Paola; Maruccio, Giuseppe; Tasco, Vittorianna; Lekshmi, Indira Chaitanya; Hazarika, Abhijit; Choudhury, Debraj; Sarma, D D

    2016-01-01

    Nearly amorphous high- k yttrium copper titanate thin films deposited by laser ablation were investigated in both metal–oxide–semiconductor (MOS) and metal–insulator–metal (MIM) junctions in order to assess the potentialities of this material as a gate oxide. The trend of dielectric parameters with film deposition shows a wide tunability for the dielectric constant and AC conductivity, with a remarkably high dielectric constant value of up to 95 for the thick films and conductivity as low as 6  ×  10 −10 S cm −1 for the thin films deposited at high oxygen pressure. The AC conductivity analysis points out a decrease in the conductivity, indicating the formation of a blocking interface layer, probably due to partial oxidation of the thin films during cool-down in an oxygen atmosphere. Topography and surface potential characterizations highlight differences in the thin film microstructure as a function of the deposition conditions; these differences seem to affect their electrical properties. (paper)

  17. Phase sensitive molecular dynamics of self-assembly glycolipid thin films: A dielectric spectroscopy investigation

    Science.gov (United States)

    Velayutham, T. S.; Ng, B. K.; Gan, W. C.; Majid, W. H. Abd.; Hashim, R.; Zahid, N. I.; Chaiprapa, Jitrin

    2014-08-01

    Glycolipid, found commonly in membranes, is also a liquid crystal material which can self-assemble without the presence of a solvent. Here, the dielectric and conductivity properties of three synthetic glycolipid thin films in different thermotropic liquid crystal phases were investigated over a frequency and temperature range of (10-2-106 Hz) and (303-463 K), respectively. The observed relaxation processes distinguish between the different phases (smectic A, columnar/hexagonal, and bicontinuous cubic Q) and the glycolipid molecular structures. Large dielectric responses were observed in the columnar and bicontinuous cubic phases of the longer branched alkyl chain glycolipids. Glycolipids with the shortest branched alkyl chain experience the most restricted self-assembly dynamic process over the broad temperature range studied compared to the longer ones. A high frequency dielectric absorption (Process I) was observed in all samples. This is related to the dynamics of the hydrogen bond network from the sugar group. An additional low-frequency mechanism (Process II) with a large dielectric strength was observed due to the internal dynamics of the self-assembly organization. Phase sensitive domain heterogeneity in the bicontinuous cubic phase was related to the diffusion of charge carriers. The microscopic features of charge hopping were modelled using the random walk scheme, and two charge carrier hopping lengths were estimated for two glycolipid systems. For Process I, the hopping length is comparable to the hydrogen bond and is related to the dynamics of the hydrogen bond network. Additionally, that for Process II is comparable to the bilayer spacing, hence confirming that this low-frequency mechanism is associated with the internal dynamics within the phase.

  18. INVESTIGATION OF THE FREQUENCY-TEMPERATURE RELATIONSHIP OF THE DIELECTRIC PERMITTIVITY OF THE PZT PIEZOCERAMICS IN THE LOW FREQUENCY RANGE

    Directory of Open Access Journals (Sweden)

    A. I. ZOLOTAREVSKIY

    2018-05-01

    Full Text Available Purpose. To investigate the frequency-temperature relationship of the dielectric permittivity of PZT piezoceramics in the low frequency range. Methodology. To obtain the frequency-temperature relationship of the dielectric permittivity of the PZT piezoceramics, a technique was used to determine the capacitance of the capacitor, between which plates the sample was placed. The value of the dielectric permittivity of the sample was calculated from the capacitor capacitance obtained. Findings. The frequency-temperature relationship of the dielectric permittivity of the PZT piezoceramics in the low frequency range has been obtained by the authors. The dielectric permittivity is not practically related to the frequency of the alternating voltage at a low temperature, with increasing in temperature its value increases and frequency relationship is observed. The temperature relationship of the dielectric permittivity of the PZT piezoceramics is satisfactorily described by the exponential functional dependence in the low-temperature range. The activation energy of the PZT piezoceramics polarization is determined from the graph of the dependence of the logarithm of the dielectric permittivity upon the inverse temperature. Different values of the activation energy for the two temperature regions prove on the existence of different mechanisms of the PZT piezoceramics polarization in the temperature range being investigated. Originality. The authors investigated the frequency-temperature relationship of the dielectric permittivity of the PZT piezoceramics in the low-frequency range. It is established that the temperature relationship of the dielectric permittivity of the PZT piezoceramics is satisfactorily described by an exponential functional relationship in the lowtemperature range. The activation energy of polarization is determined for two temperature sections. Practical value. The research results can be used to study the mechanism of polarization of

  19. Experimental investigation on large-area dielectric barrier discharge in atmospheric nitrogen and air assisted by the ultraviolet lamp.

    Science.gov (United States)

    Zhang, Yan; Gu, Biao; Wang, Wenchun; Wang, Dezhen; Peng, Xuwen

    2009-04-01

    In this paper, ultraviolet radiation produced by the ultraviolet lamp is employed to supply pre-ionization for the dielectric barrier discharge in N(2) or air at atmospheric pressure. The effect of the ultraviolet pre-ionization on improving the uniformity of the dielectric barrier discharge is investigated experimentally. The atmospheric pressure glow discharge of the large area (270 mm x 120 mm) is obtained successfully via the ultraviolet pre-ionization in atmospheric DBD in N(2) when the gas gap decrease to 3mm. Based on the emission spectra, the mechanism which ultraviolet pre-ionization improves the uniformity of the dielectric barrier discharge is discussed.

  20. Optical investigation of effective permeability of dilute magnetic dielectrics with magnetic field

    Energy Technology Data Exchange (ETDEWEB)

    Banerjee, Ananya, E-mail: banerjee.ananya2008@gmail.com; Sarkar, A. [Dept. of Physics, Bijoy Krishna Girls’ College, 5/3 M.G. Road, Howrah 711101, W.B. (India)

    2016-05-06

    The prime objective of this paper is to investigate the magnetic nature of dilute magnetic dielectrics (DMD) under variation of external magnetic field. The said variation is studied over developed nano-sized Gadolinium Oxide as a DMD system. The observed experimental field variation of the effective magnetic permeability is analyzed results of optical experiment. The experiment records the variation of Brewster angle of incident polarized LASER beam from the surface of developed DMD specimen with applied out of plane external magnetic field. The effective refractive index and hence relative magnetic permeability were estimated following electro-magnetic theory. The overall results obtained and agreement between theory and experiment are good.

  1. Optical investigation of effective permeability of dilute magnetic dielectrics with magnetic field

    Science.gov (United States)

    Banerjee, Ananya; Sarkar, A.

    2016-05-01

    The prime objective of this paper is to investigate the magnetic nature of dilute magnetic dielectrics (DMD) under variation of external magnetic field. The said variation is studied over developed nano-sized Gadolinium Oxide as a DMD system. The observed experimental field variation of the effective magnetic permeability is analyzed results of optical experiment. The experiment records the variation of Brewster angle of incident polarized LASER beam from the surface of developed DMD specimen with applied out of plane external magnetic field. The effective refractive index and hence relative magnetic permeability were estimated following electro-magnetic theory. The overall results obtained and agreement between theory and experiment are good.

  2. Atmospheric Pressure Plasma Jet-Assisted Synthesis of Zeolite-Based Low-k Thin Films.

    Science.gov (United States)

    Huang, Kai-Yu; Chi, Heng-Yu; Kao, Peng-Kai; Huang, Fei-Hung; Jian, Qi-Ming; Cheng, I-Chun; Lee, Wen-Ya; Hsu, Cheng-Che; Kang, Dun-Yen

    2018-01-10

    Zeolites are ideal low-dielectric constant (low-k) materials. This paper reports on a novel plasma-assisted approach to the synthesis of low-k thin films comprising pure-silica zeolite MFI. The proposed method involves treating the aged solution using an atmospheric pressure plasma jet (APPJ). The high reactivity of the resulting nitrogen plasma helps to produce zeolite crystals with high crystallinity and uniform crystal size distribution. The APPJ treatment also remarkably reduces the time for hydrothermal reaction. The zeolite MFI suspensions synthesized with the APPJ treatment are used for the wet deposition to form thin films. The deposited zeolite thin films possessed dense morphology and high crystallinity, which overcome the trade-off between crystallinity and film quality. Zeolite thin films synthesized using the proposed APPJ treatment achieve low leakage current (on the order of 10 -8 A/cm 2 ) and high Young's modulus (12 GPa), outperforming the control sample synthesized without plasma treatment. The dielectric constant of our zeolite thin films was as low as 1.41. The overall performance of the low-k thin films synthesized with the APPJ treatment far exceed existing low-k films comprising pure-silica MFI.

  3. Investigation of dielectric properties of different cake formulations during microwave and infrared-microwave combination baking.

    Science.gov (United States)

    Sakiyan, Ozge; Sumnu, Gulum; Sahin, Serpil; Meda, Venkatesh

    2007-05-01

    Dielectric properties can be used to understand the behavior of food materials during microwave processing. Dielectric properties influence the level of interaction between food and high frequency electromagnetic energy. Dielectric properties are, therefore, important in the design of foods intended for microwave preparation. In this study, it was aimed to determine the variation of dielectric properties of different cake formulations during baking in microwave and infrared-microwave combination oven. In addition, the effects of formulation and temperature on dielectric properties of cake batter were examined. Dielectric constant and loss factor of cake samples were shown to be dependent on formulation, baking time, and temperature. The increase in baking time and temperature decreased dielectric constant and loss factor of all formulations. Fat content was shown to increase dielectric constant and loss factor of cakes.

  4. Investigation of steel to dielectric transition using microminiature eddy-current converter

    Directory of Open Access Journals (Sweden)

    Malikov Vladimir

    2018-01-01

    Full Text Available The research aims to develop a microminiature converter for electrical steel investigation. The research topic is considered relevant due to the need for evaluation and forecasting of safe operating life of electric steel products. The authors determined the capability to study steel characteristics at different depths based on variations of eddy-current converter amplitude at the steel-dielectric boundary. A microminiature transformer-type converter was designed, which enables to perform local investigations of ferromagnetic materials using eddy-current method based on local studies of the steel electrical conductivity. Having the designed converter as a basis, a hardware-software complex was built to perform experimental studies of steel at the interface boundary. A system was developed for automated converter relocation above the studied object at a specified velocity. Test results are reported for a specimen with continuous and discrete measurements taken at different frequencies. Response dependence of eddy-current converter was found to demonstrate non-linear behavior at steel to dielectric transition. The effect of gap between the eddy-current converter and the test object is investigated.

  5. Numerical and experimental investigation of dielectric recovery in supercritical N2

    International Nuclear Information System (INIS)

    Zhang, J; Van Heesch, E J M; Markosyan, A H; Ebert, U; Seeger, M; Van Veldhuizen, E M

    2015-01-01

    A supercritical (SC) nitrogen (N 2 ) switch is designed and tested. The dielectric strength and recovery rate of the SC switch are investigated by experiments. In order to theoretically study the discharge and recovery process of the SC N 2 switch under high repetition rate operation, a numerical model is developed. For SC N 2 with initial parameters of p = 80.9 bar and T = 300 K, the simulation results show that within several nanoseconds after the streamer bridges the switch gap, the spark is fully developed and this time depends on the applied electric field between electrodes. During the whole discharge process, the maximum temperature in the channel is about 20 000 K. About 10 µs after the spark excitation of 200 ns duration, the temperature on the axis decays to T axis  ⩽ 1500 K, mainly contributed by the gas expansion and heat transfer mechanisms. After 100 µs, the dielectric strength of the gap recovers to above half of the cold breakdown voltage due to the temperature decay in the channel. Both experimental and numerical investigations indicate that supercritical fluid is a good insulating medium that has a proved high breakdown voltage and fast recovery speed. (paper)

  6. Investigation of dielectric properties of heterostructures based on ZnO structures

    Directory of Open Access Journals (Sweden)

    Selçuk A.H.

    2018-03-01

    Full Text Available The voltage and frequency dependence of dielectric constant є′, dielectric loss є″, electrical modulus M″, M′, loss tangent tanδ and AC electrical conductivity σAC of p-Si/ZnO/PMMA/Al, p-Si/ZnO/Al and p-Si/PMMA/Al structures have been investigated by means of experimental G-V and C-V measurements at 30 kHz, 100kHz, 500 kHz and 1 MHz in this work. While the values of є′, є″, tanδ and σAC decreased, the values of M′ and M″ increased for these structures when frequency was increased and those of p-Si/ZnO/Al and p-Si/PMMA/Al were comparable with those of p-Si/ZnO/PMMA/Al. The obtained results showed that the values of p-Si/ZnO/PMMA/Al structure were lower than the values of p-Si/ZnO/Al and p-Si/PMMA/Al.

  7. Experimental investigation of magnetoplasma acceleration of dielectric projectiles in a rail gun

    International Nuclear Information System (INIS)

    Kondratenko, M.M.; Lebedev, E.F.; Ostashev, V.E.; Safonov, V.I.; Fortov, V.E.; Ul'yanov, A.V.

    1988-01-01

    The authors present results of experimental investigations of the process of a nondestructive electrodynamic acceleration of dielectric projectiles in a magnetoplasma accelerator of rail gun type upon discharge of the electrical energy of the capacitor bank. They describe the phenomenon of decay of the plasma driving piston. They describe the causes of this phenomenon and the practical steps to avoid it. In a specific facility regimes have been achieved with electrodynamic acceleration of projectiles without plasma piston decay at working currents of up to 0.7 MA. In acceleration of projectiles of mass ∼ 1 g a speed of 6 km/sec has been attained and reproduced. The facility constructed can be used efficiently in experiments to investigate the thermophysical properties of substances using dynamic methods as a means of creating intense kinetic energy pulses

  8. A combined diffraction and dielectric properties investigation of Ba3MnNb2O9 complex perovskites

    International Nuclear Information System (INIS)

    Liu Yun; Withers, Ray L.; Whichello, A.P.; Noren, Lasse; Ting, Valeska; Brink, Frank; Fitz Gerald, John D.

    2005-01-01

    A combined synthesis, diffraction and dielectric properties investigation of the dependence (and effect) of Mn 2+ /Nb 5+ ordering in Ba 3 MnNb 2 O 9 (BMN) upon annealing atmosphere and processing conditions has been carried out. Annealing in different atmospheres was not found to significantly alter either nominal stoichiometry or structure type. The obtained structure type (disordered metrically cubic or ordered trigonal) as well as the measured electrical properties (in particular, the dielectric loss) were, however, found to be sensitive to the synthesis route. Samples obtained via solid-state reaction were found to be predominantly of 1:2 Mn 2+ /Nb 5+ ordered, P3-bar m1 trigonal structure type whereas samples obtained via an aqueous solution route were found to be of a Mn 2+ /Nb 5+ 'disordered', metrically cubic structure type. All solid-state synthesized samples showed reasonable dielectric properties. The microwave dielectric constant and dielectric quality factor, Q, at 8GHz of an as-synthesized BMN sample were 38 and 100, respectively. By contrast, the dielectric loss of the metrically cubic, Mn 2+ /Nb 5+ 'disordered' samples obtained via an aqueous solution synthesis process were significantly worse

  9. Acoustic Phonons and Mechanical Properties of Ultra-Thin Porous Low-k Films: A Surface Brillouin Scattering Study

    Science.gov (United States)

    Zizka, J.; King, S.; Every, A.; Sooryakumar, R.

    2018-04-01

    To reduce the RC (resistance-capacitance) time delay of interconnects, a key development of the past 20 years has been the introduction of porous low-k dielectrics to replace the traditional use of SiO2. Moreover, in keeping pace with concomitant reduction in technology nodes, these low-k materials have reached thicknesses below 100 nm wherein the porosity becomes a significant fraction of the film volume. The large degree of porosity not only reduces mechanical strength of the dielectric layer but also renders a need for non-destructive approaches to measure the mechanical properties of such ultra-thin films within device configurations. In this study, surface Brillouin scattering (SBS) is utilized to determine the elastic constants, Poisson's ratio, and Young's modulus of these porous low-k SiOC:H films (˜ 25-250 nm thick) grown on Si substrates by probing surface acoustic phonons and their dispersions.

  10. High-efficiency dielectric barrier Xe discharge lamp: theoretical and experimental investigations

    International Nuclear Information System (INIS)

    Beleznai, Sz; Mihajlik, G; Agod, A; Maros, I; Juhasz, R; Nemeth, Zs; Jakab, L; Richter, P

    2006-01-01

    A dielectric barrier Xe discharge lamp producing vacuum-ultraviolet radiation with high efficiency was investigated theoretically and experimentally. The cylindrical glass body of the lamp is equipped with thin strips of metal electrodes applied to diametrically opposite sides of the outer surface. We performed a simulation of discharge plasma properties based on one-dimensional fluid dynamics and also assessed the lamp characteristics experimentally. Simulation and experimental results are analysed and compared in terms of voltage and current characteristics, power input and discharge efficiency. Using the proposed lamp geometry and fast rise-time short square pulses of the driving voltage, an intrinsic discharge efficiency around 56% was predicted by simulation, and more than 60 lm W -1 lamp efficacy (for radiation converted into visible green light by phosphor coating) was demonstrated experimentally

  11. Dielectric investigations under irradiation of photo chromic copolymers with azobenzene moieties in the side group

    International Nuclear Information System (INIS)

    Turky, G.; Stumpe, J.; Schonhals, A.

    2005-01-01

    Photo chromic polymers are promising materials for optical switching and image storage because the orientation of mesogens in thin films of these materials can be modified by light. Real time dielectric spectroscopy is applied to study the time dependence of the light induced trans/cis-isomerization process for polymethacrylate copolymer system. For the investigated azobenzene group it was found that the dipole moment of the Z state is greater than that of E state. Therefore normalized . increases with increasing irradiation time (E/Z isomerization) at different considered wavelengths. A steady state is reached after about 10000 s. The effect of irradiation reduces at longer and shorter wavelengths. Stretched exponential equation was used to describe the effect of irradiation time on the normalized permittivity

  12. Experimental investigation on the repetitively nanosecond pulsed dielectric barrier discharge with the parallel magnetic field

    Science.gov (United States)

    Liu, Yidi; Yan, Huijie; Guo, Hongfei; Fan, Zhihui; Wang, Yuying; Ren, Chunsheng

    2018-02-01

    The effects of a parallel magnetic field on the unipolar positive nanosecond pulsed dielectric barrier discharge are experimentally investigated through electrical and spectral measurements. The discharge is produced between two parallel-plate electrodes in the ambient air with a parallel magnetic field of 1.4 T. Experimental results show that both the discharge intensity and uniformity are improved in the discharge with the parallel magnetic field. The intensity ratio of the spectrum at 371.1 nm and 380.5 nm, which describes the average electron density, is increased by the parallel magnetic field. Meanwhile, the intensity ratio of the spectrum at 391.4 nm and 337.1 nm, which describes the electron temperature, is also increased. It is speculated that both the average electron density and the electron temperature are increased by the parallel magnetic field. The aforementioned phenomena have been explained by the confinement effect of the parallel magnetic field on the electrons.

  13. Investigation of Ultraviolet Light Curable Polysilsesquioxane Gate Dielectric Layers for Pentacene Thin Film Transistors.

    Science.gov (United States)

    Shibao, Hideto; Nakahara, Yoshio; Uno, Kazuyuki; Tanaka, Ichiro

    2016-04-01

    Polysilsesquioxane (PSQ) comprising 3-methacryloxypropyl groups was investigated as an ultraviolet (UV)-light curable gate dielectric-material for pentacene thin film transistors (TFTs). The surface of UV-light cured PSQ films was smoother than that of thermally cured ones, and the pentacene layers deposited on the UV-Iight cured PSQ films consisted of larger grains. However, carrier mobility of the TFTs using the UV-light cured PSQ films was lower than that of the TFTs using the thermally cured ones. It was shown that the cross-linker molecules, which were only added to the UV-light cured PSQ films, worked as a major mobility-limiting factor for the TFTs.

  14. Investigation of PVC physical ageing in field test specimens using ultrasonic and dielectric measurements

    NARCIS (Netherlands)

    Demcenko, A.; Ravanan, M.; Visser, Roy; Loendersloot, Richard; Akkerman, Remko

    2013-01-01

    Physical ageing in PVC is studied using two techniques: a) non-linear ultrasonic measurements based on the non-collinear wave interaction theory and b) dielectric measurements. The ultrasonic measurement results are compared with dielectric measurement results. The comparison shows that the used

  15. Experimental Investigation of an X-Band Tunable Dielectric Accelerating Structure

    CERN Document Server

    Kanareykin, Alex; Karmanenko, Sergei F; Nenasheva, Elisaveta; Power, John G; Schoessow, Paul; Semenov, Alexei

    2005-01-01

    Experimental study of a new scheme to tune the resonant frequency for dielectric based accelerating structure (driven either by the wakefield of a beam or an external rf source) is underway. The structure consists of a single layer of conventional dielectric surrounded by a very thin layer of ferroelectric material situated on the outside. Carefully designed electrodes are attached to a thin layer of ferroelectric material. A DC bias can be applied to the electrodes to change the permittivity of the ferroelectric layer and therefore, the dielectric overall resonant frequency can be tuned. In this paper, we present the test results for an 11.424 GHz rectangular DLA prototype structure that the ferroelectric material's dielectric constant of 500 and show that a frequency tuning range of 2% can be achieved. If successful, this scheme would compensate for structure errors caused by ceramic waveguide machining tolerances and dielectric constant heterogeneity.

  16. Current leakage relaxation and charge trapping in ultra-porous low-k materials

    International Nuclear Information System (INIS)

    Borja, Juan; Plawsky, Joel L.; Gill, William N.; Lu, T.-M.; Bakhru, Hassaram

    2014-01-01

    Time dependent dielectric failure has become a pivotal aspect of interconnect design as industry pursues integration of sub-22 nm process-technology nodes. Literature has provided key information about the role played by individual species such as electrons, holes, ions, and neutral impurity atoms. However, no mechanism has been shown to describe how such species interact and influence failure. Current leakage relaxation in low-k dielectrics was studied using bipolar field experiments to gain insight into how charge carrier flow becomes impeded by defects within the dielectric matrix. Leakage current decay was correlated to injection and trapping of electrons. We show that current relaxation upon inversion of the applied field can be described by the stretched exponential function. The kinetics of charge trapping events are consistent with a time-dependent reaction rate constant, k=k 0 ⋅(t+1) β−1 , where 0 < β < 1. Such dynamics have previously been observed in studies of charge trapping reactions in amorphous solids by W. H. Hamill and K. Funabashi, Phys. Rev. B 16, 5523–5527 (1977). We explain the relaxation process in charge trapping events by introducing a nonlinear charge trapping model. This model provides a description on the manner in which the transport of mobile defects affects the long-tail current relaxation processes in low-k films

  17. Investigation of airflow effects on the dielectric barrier discharge with single/double discharge channel arrangement

    Science.gov (United States)

    Fan, Zhihui; Yan, Huijie; Liu, Yidi; Guo, Hongfei; Wang, Yuying; Ren, Chunsheng

    2018-05-01

    Atmospheric-pressure dielectric barrier discharge (DBD) with airflow participation has been widely used in recent years. In this paper, effects of airflow on DBD characteristics are experimentally investigated by single/double pin-to-plate DBD arrangements with an AC exciting source. The discharge electrical characteristics and the movements of discharge channels in airflow are investigated with a single pin electrode arrangement. The current intensities increase in positive cycles and decrease in negative cycles with the increase in airflow velocity. The transition from a filamentary discharge to a diffuse discharge is observed under certain airflow conditions, and the discharge channels move with the airflow with a movement velocity less than the corresponding airflow velocity. In the cases of double pin electrode arrangements, the repulsion between double pin discharge channels is apparent at a 10 mm distance but is not obvious at a 20 mm distance. When the airflow is introduced into the discharge gap, not as in the case of single pin electrode arrangement, the movements of discharge channels in airflow are affected by adjacent discharge channels. The corresponding reasons are analyzed in the paper.

  18. Investigation of dielectric relaxation in systems with hierarchical organization: From time to frequency domain and back again

    Energy Technology Data Exchange (ETDEWEB)

    Yokoi, Koki [Department of Physics, University of Wisconsin-Milwaukee, Milwaukee, WI (United States); Raicu, Valerică, E-mail: vraicu@uwm.edu [Department of Physics, University of Wisconsin-Milwaukee, Milwaukee, WI (United States); Department of Biological Sciences, University of Wisconsin-Milwaukee, Milwaukee, WI (United States)

    2017-06-28

    Relaxation in fractal structures was investigated theoretically starting from a simple model of a Cantorian tree and kinetic equations linking the change in the number of particles (e.g., electrical charges) populating each branch of the tree and their transfer to other branches or to the ground state. We numerically solved the system of differential equations obtained and determined the so-called cumulative distribution function of particles, which, in dielectric or mechanical relaxation parlance, is the same as the relaxation function of the system. As a physical application, we studied the relationship between the dielectric relaxation in time-domain and the dielectric dispersion in the frequency-domain. Upon choosing appropriate rate constants, our model described accurately well-known non-exponential and non-Debye time- and frequency-domain functions, such as stretched exponentials, Havrilliak–Negami, and frequency power law. Our approach opens the door to applying kinetic models to describe a wide array of relaxation processes, which traditionally have posed great challenges to theoretical modeling based on first principles. - Highlights: • Relaxation was investigated for a system of particles flowing through a Cantorian tree. • A set of kinetic equations was formulated and used to compute the relaxation function of the system. • The dispersion function of the system was computed from the relaxation function. • An analytical method was used to recover the original relaxation function from the dispersion function. • This formalism was used to study dielectric relaxation and dispersion in fractal structures.

  19. Electrical and dielectric investigation of intercalated polypyrrole montmorillonite nanocomposite prepared by spontaneous polymerization of pyrrole into Fe(III)-montmorillonite

    Energy Technology Data Exchange (ETDEWEB)

    Zidi, Rabii, E-mail: rabiizidi@gmail.com [Physical Chemistry Laboratory for Mineral Materials and their Applications, National Center for Research in Materials Sciences (CNRSM), B.P.73, 8020 Soliman (Tunisia); Bekri-Abbes, Imene; Sdiri, Nasr [Physical Chemistry Laboratory for Mineral Materials and their Applications, National Center for Research in Materials Sciences (CNRSM), B.P.73, 8020 Soliman (Tunisia); Vimalanandan, Ashokanand; Rohwerder, Michael [Max-Planck-Institut für Eisenforschung GmbH, Düsseldorf (Germany); Srasra, Ezzeddine [Physical Chemistry Laboratory for Mineral Materials and their Applications, National Center for Research in Materials Sciences (CNRSM), B.P.73, 8020 Soliman (Tunisia)

    2016-10-15

    Highlights: • We have prepared and characterized a Fe-MMT/PPy nanocomposites. • Investigate electrical conductivity and dielectric properties of the nanocomposite. • Investigate the temperature and frequency dependencies of alternating current conductivity of nanocomposites. - Abstract: Pyrrole was introduced into Fe(III)-exchanged montmorillonite to spontaneously polymerize within the interlayer resulting in the formation of intercalated polypyrrole-montmorillonite nanocomposite. The molar proportion of pyrrole to interlayer Fe{sup 3+} (R) has been varied from 0.5 to 5. The nanocomposite has been characterized by X-ray diffraction, Scanning Electronic Microscope, FTIR spectroscopy and impedance spectroscopy. It has been shown that intercalated polypyrrole montmorillonite nanocomposite was obtained. The results showed that the dc conductivity and dielectric properties of polypyrrole depend on R. The alternating current (ac) conductivity of the polymer obeys the power law, i.e., σ{sub ac}(ω) = Aω{sup s}. The alternating conductivity of nanocomposite was controlled by the correlated barrier hopping model. The activation energy for alternating current mechanism decreases with increasing frequency which confirms the hopping conduction to the dominant mechanism as compared with the dc activation energy. The dielectric relaxation mechanism was explained on the basis of complex dielectric modulus.

  20. Investigation of terbium scandate as an alternative gate dielectric in fully depleted transistors

    OpenAIRE

    Roeckerath, M.; Lopes, J. M. J.; Durgun Özben, E.; Urban, C.; Schubert, J.; Mantl, S.; Jia, Y.; Schlom, D.G.

    2010-01-01

    Terbium scandate thin films were deposited by e-gun evaporation on (100) silicon substrates. Rutherford backscattering spectrometry and x-ray diffraction studies revealed homogeneous chemical compositions of the films. A dielectric constant of 26 and CV-curves with small hystereses were measured as well as low leakage current densities of < 1 nA/cm(2). Fully depleted n-type field-effect transistors on thin silicon-on-insulator substrates with terbium scandate gate dielectrics were fabricated ...

  1. Theoretical Investigations of Dielectric Breakdown in CO2: Implications for Atmospheric Discharges on Mars (and Venus)

    Science.gov (United States)

    Riousset, J. A.

    2017-12-01

    The detection of an atmospheric discharge in the Martian atmosphere by Ruf et al. [GRL, 36, L13202, 2009] supports the idea of a Martian atmospheric electric circuit [Farrell and Desch, JGR, 106, E4, 2001]. However, the lack of subsequent detection of similar events raises the question of the conditions of their initiation, and the existence of Martian lightning remains a controversial question. On Earth, atmospheric electricity manifests itself in the form of glow, corona, streamer, and leader discharges observed as Saint Elmo's fire, sprites, lightning and jets discharges, and other Transient Luminous Events (TLEs). All of these are dielectric breakdown governed by different physics. Their initiation is associated with the crossing of specific electric field thresholds: relativistic runaway, streamer propagation, conventional breakdown, or thermal runaway thresholds, some better understood than others. For example, the initiation of a lightning discharge is known to occur when the local electric field exceeds a value similar to relativistic runaway field, but the exact threshold, as well as the physical mechanisms at work, remain unclear to date. Scaling laws for electric fields (and other quantities) have been established by Pasko et al. [GRL, 25(12), 2123-2126, 1998] and Pasko [NATO Sci. Series, Springer, 253-311, 2006]. In this work, we develop profiles for initiation criteria in air and in other atmospheric environments. We further calculate their associated scaling laws to determine the ability to trigger lightning flashes and TLEs on Mars. This lets us predict the likelihood of electrical discharges and calculate the expected electric field conditions, under which discharges could be observed. We develop the analogy between Earth sand storm [Nicoll et al., Env. Res. Lett., 6, 014001, 2001] and Martian dust storms [Melnik and Parrot, JGR, 103(A12), 1998] to investigate the charge structure and resulting electric fields necessary to initiate dielectric

  2. Preliminary Investigation of a Dielectric Barrier Discharge Lamp in Open Air at Atmospheric Pressure

    International Nuclear Information System (INIS)

    Liu Feng; Wang Wei-Wei; Chang Xi-Jiang; Liang Rong-Qing

    2011-01-01

    A dielectric barrier discharge (DBD) lamp is investigated by using sinusoidal power with a 10 kHz frequency in open air at atmospheric pressure. With increasing applied voltages, the different discharge phenomena appear. At relatively low voltages, the discharge states are general stochastic filamentary discharges with weak light. However, at relatively high voltages, the walls of quartz tubes are heated sharply by plasma, and then the dazzling light is emitted very quickly to form the DBD Lamp, corresponding to the low maintaining voltage that is lower than the ignited voltage. The discharge state or mode of the DBD lamp that corresponds to the glow discharge is deduced according to the wave form of the circuit current, which is evidently different from the filamentary discharges. Under these conditions, the spectrum of the DBD lamp is continuous in the range 400–932 nm, which is scanned in the range 300–932 nm. It is also shown that there is another discharge state or mode that is different from the traditional filamentary discharges. Therefore, it is concluded that the discharge state or mode of the DBD lamp is a glow discharge. (physics of gases, plasmas, and electric discharges)

  3. Performance investigation on dissipative dielectric elastomer generators with a triangular energy harvesting scheme

    Science.gov (United States)

    Fan, Peng; Chen, Hualing; Li, Bo; Wang, Yongquan

    2017-11-01

    In this letter, a theoretical framework describing an energy harvesting cycle including the loss of tension (LT) process is proposed to investigate the energy harvesting performance of a dielectric elastomer generator (DEG) with a triangular energy harvesting scheme by considering material viscosity and leakage current. As the external force that is applied to the membrane decreases, the membrane is relaxed. When the external force decreases to zero, the condition is known as LT. Then the membrane undergoing LT can further relax, which is referred to as the LT process. The LT process is usually ignored in theoretical analysis but observed from energy harvesting experiments of DEGs. It is also studied how shrinking time and transfer capacitor affect the energy conversion of a DEG. The results indicate that energy density and conversion efficiency can be simultaneously improved by choosing appropriate shrinking time and transfer capacitor to optimize the energy harvesting cycle. The results and methods are expected to provide guidelines for the optimal design and assessment of DEGs.

  4. Vibrational spectroscopic and dielectric properties investigations of phase transitions in KMgPO4 compound

    Science.gov (United States)

    Miladi, L.; Oueslati, A.; Guidara, K.

    2017-11-01

    The potassium orthophosphate KMgPO4 with a β-tridymite structure was synthesized via solid-state reaction. X-ray diffraction study confirms the formation of a single phase material which crystallizes at room temperature in monoclinic system. This compound has been investigated by vibrational spectroscopy in the temperature range573-723 K. Thermal analysis shows that this composition undergoes two phase transitions at T1=633Kand T2=693 K.The evolution of Raman line ν and half -width Δν versus temperature introduces huge changes which are associated with the phase transitions originating from the reorientation of the PO4 tetrahedron. Besides, an analysis of the dielectric constants ε‧ and ε″versus temperature at several frequencies shows a distribution of relaxation times. This relaxation is probably due to the change in dynamical state of the K+ cation. The ac conductivity behavior can be understood in terms of the motions of K+ cations along the tunnels which are formed by six-membered rings of MgO4 and PO4 tetrahedron linked by common vertices. The activation energies values obtained from the thermal evolution of the conductivity are: Ea1=0.52 eV (T693 K).

  5. Magnetic and Dielectric Investigations of Mn-Doped Ba Hexaferrite Nanoparticles by Hydrothermal Approach

    Science.gov (United States)

    Adeela, N.; Khan, U.; Iqbal, M.; Riaz, S.; Ali, H.; Maaz, K.; Naseem, S.

    2016-11-01

    A hydrothermal method followed by heat treatment was used to synthesize Mn-substituted Ba2Co2- x Mn x Fe12O22 nanoparticles with a nominal chemical composition of 0 ≤ x < 1 and step gap of 0.3. In this study, the effect of Mn substitution on Co2Y-type barium hexaferrite is investigated after employing x-ray diffraction for crystal structure, field emission scanning electron microscopy for morphology, energy dispersive analysis of x-ray spectroscopy for elemental composition, Fourier transform infrared spectroscopy to confirm bond modes, and vibrating sample magnetometry for magnetic measurements. It was found that the sample at x = 0.9 is of particular interest due to its large coercivity and anisotropy. Later on, for x = 0.9, temperature-dependent magnetic analyses including hysteresis loops, zero-field-cooled, and field-cooled at a particular field of 100 Oe were performed. The decreasing trend in saturation magnetization with increase in temperature was estimated. On the other hand, first an increase and then decrease in coercivity values were observed. These loops also revealed dependence of coercivity on magneto-crystalline anisotropy and average crystallite size of nanoparticles. Dielectric measurements at x = 0.9 make it suitable for high frequency applications.

  6. Curing kinetics of visible light curing dental resin composites investigated by dielectric analysis (DEA).

    Science.gov (United States)

    Steinhaus, Johannes; Hausnerova, Berenika; Haenel, Thomas; Großgarten, Mandy; Möginger, Bernhard

    2014-03-01

    During the curing process of light curing dental composites the mobility of molecules and molecule segments is reduced leading to a significant increase of the viscosity as well as the ion viscosity. Thus, the kinetics of the curing behavior of 6 different composites was derived from dielectric analysis (DEA) using especially redesigned flat sensors with interdigit comb electrodes allowing for irradiation at the top side and measuring the ion viscosity at the bottom side. As the ion viscosities of dental composites change 1-3 orders of magnitude during the curing process, DEA provides a sensitive approach to evaluate their curing behavior, especially in the phase of undisturbed chain growth. In order to determine quantitative kinetic parameters a kinetic model is presented and examined for the evaluation of the ion viscosity curves. From the obtained results it is seen that DEA might be employed in the investigation of the primary curing process, the quality assurance of ingredients as well as the control of processing stability of the light curing dental composites. Copyright © 2014 Academy of Dental Materials. Published by Elsevier Ltd. All rights reserved.

  7. Preparation and dielectric investigation of organic metal insulator semiconductor (MIS) structures with a ferroelectric polymer

    Energy Technology Data Exchange (ETDEWEB)

    Kalbitz, Rene; Fruebing, Peter; Gerhard, Reimund [Department of Physics and Astronomy, University of Potsdam (Germany); Taylor, Martin [School of Electronic Engineering, Bangor University (United Kingdom)

    2010-07-01

    Ferroelectric field effect transistors (FeFETs) offer the prospect of an organic-based memory device. Since the charge transport in the semiconductor is confined to the interface region between the insulator and the semiconductor, the focus of the present study was on the investigation of this region in metal-insulator-semiconductor (MIS) capacitors using dielectric spectroscopy. Capacitance-Voltage (C-V) measurements at different frequencies as well as capacitance-frequency (C-f) measurements after applying different poling voltages were carried out. The C-V measurements yielded information about the frequency dependence of the depletion layer width as well as the number of charges stored at the semiconductor/ insulator interface. The results are compared to numerical calculations based on a model introduced by S. L. Miller (JAP, 72(12), 1992). The C-f measurements revealed three main relaxation processes. An equivalent circuit has been developed to model the frequency response of the MIS capacitor. With this model the origin of the three relaxations may be deduced.

  8. Investigation of dielectric behavior of the PVC/BaTiO3 composite in low-frequencies

    Science.gov (United States)

    Berrag, A.; Belkhiat, S.; Madani, L.

    2018-04-01

    Polyvinyl chloride (PVC) is widely used as insulator in electrical engineering especially as cable insulation sheaths. In order to improve the dielectric properties, polymers are mixed with ceramics. In this paper, PVC composites with different weight percentages 2 wt.%, 5 wt.%, 8 wt.% and 10 wt.% were prepared and investigated. Loss index (𝜀″) and dielectric constant (𝜀‧) have been measured using an impedance analyzer RLC. Fourier transform infrared (FTIR) spectroscopy, scanning electron microscopy (SEM) equipped with energy dispersive X-ray (EDX) have been used as characterization techniques. The incorporation of BaTiO3 does not modify the crystallinity and the morphology of the PVC but reduces the space charges, therefore the dielectric losses. The frequency response analysis has been followed in the frequency ranges (20-140 Hz and 115-1 MHz). Relaxation frequencies have been evaluated in each frequency range. Experimental measurements have been validated using Cole-Cole’s model. Experimental results show well that BaTiO3 as a filler improves the dielectric properties of PVC.

  9. Investigation on nonlinear optical and dielectric properties of L-arginine doped ZTC crystal to explore photonic device applications

    Directory of Open Access Journals (Sweden)

    Anis Mohd

    2016-09-01

    Full Text Available The present study is focused to explore the photonic device applications of L-arginine doped ZTC (LA-ZTC crystals using nonlinear optical (NLO and dielectric studies. The LA-ZTC crystals have been grown by slow evaporation solution technique. The chemical composition and surface of LA-ZTC crystal have been analyzed by means of energy dispersive spectroscopy (EDS and surface scanning electron microscopy (SEM techniques. The Vicker’s microhardness study has been carried out to determine the hardness, work hardening index, yield strength and elastic stiffness of LA-ZTC crystal. The enhanced SHG efficiency of LA-ZTC crystal has been ascertained using the Kurtz-Perry powder SHG test. The closed-and-open aperture Z-scan technique has been employed to confirm the third order nonlinear optical nature of LA-ZTC crystal. The Z-scan transmittance data has been utilized to calculate the superior cubic susceptibility, nonlinear refractive index, nonlinear absorption coefficient and figure of merit of LA-ZTC crystal. The behavior of dielectric constant and dielectric loss of LA-ZTC crystal at different temperatures has been investigated using the dielectric analysis.

  10. Theoretical and experimental investigations of efficient light coupling with spatially varied all dielectric striped waveguides

    Science.gov (United States)

    Yilmaz, Y. A.; Tandogan, S. E.; Hayran, Z.; Giden, I. H.; Turduev, M.; Kurt, H.

    2017-07-01

    Integrated photonic systems require efficient, compact, and broadband solutions for strong light coupling into and out of optical waveguides. The present work investigates an efficient optical power transferring the problem between optical waveguides having different widths of in/out terminals. We propose a considerably practical and feasible concept to implement and design an optical coupler by introducing gradually index modulation to the coupler section. The index profile of the coupler section is modulated with a Gaussian function by the help of striped waveguides. The effective medium theory is used to replace the original spatially varying index profile with dielectric stripes of a finite length/width having a constant effective refractive index. 2D and 3D finite-difference time-domain analyzes are utilized to investigate the sampling effect of the designed optical coupler and to determine the parameters that play a crucial role in enhancing the optical power transfer performance. Comparing the coupling performance of conventional benchmark adiabatic and butt couplers with the designed striped waveguide coupler, the corresponding coupling efficiency increases from approximately 30% to 95% over a wide frequency interval. In addition, to realize the realistic optical coupler appropriate to integrated photonic applications, the proposed structure is numerically designed on a silicon-on-insulator wafer. The implemented SOI platform based optical coupler operates in the telecom wavelength regime (λ = 1.55 μm), and the dimensions of the striped coupler are kept as 9.77 μm (along the transverse to propagation direction) and 7.69 μm (along the propagation direction) where the unit distance is fixed to be 465 nm. Finally, to demonstrate the operating design principle, the microwave experiments are conducted and the spot size conversion ratio as high as 7.1:1 is measured, whereas a coupling efficiency over 60% in the frequency range of 5.0-16.0 GHz has been also

  11. Structural, magnetic and dielectric investigations in antimony doped nano-phased nickel-zinc ferrites

    Energy Technology Data Exchange (ETDEWEB)

    Lakshmi, Ch.S. [Department of Physics, Regency Institute of Technology, Adivipolam Yanam 533464, Pondicherry (India); Sridhar, Ch.S.L.N. [Department of Physics, Vignana Bharathi Institute of Technology, Aushapur(v) Ghatkesar (M), Hyderabad 501301, Telangana (India); Govindraj, G. [Department of Physics, School of Physical, Chemical and Applied Sciences, Pondicherry University, R.V.Nagar, Kalapet, Pondicherry 605014 (India); Bangarraju, S. [Department of Physics, Andhra University, Visakhapatnam 530003, Andhrapradesh (India); Potukuchi, D.M., E-mail: potukuchidm@yahoo.com [Department of Physics, University College of Engineering, Jawaharlal Nehru Technological University:Kakinada, Kakinada 533003 (India)

    2015-02-15

    Nanocrystalline Ni–Zn–Sb ferrites synthesized by hydrothermal method are reported. Influence of Sb{sup 5+} ions on structural, magnetic and dielectric properties of ferrites is studied. Phase identification, lattice parameter and crystallite size studies are carried out using by X-ray diffraction (XRD). Addition of dopant resulted for decrease in lattice parameter. Crystallite size gets reduced from 62 nm to 38 nm with doping of Antimony. Crystallite size and porosity exhibit similar trends with doping. Morphological study is carried out by Field Emission Scanning Electron Microscopy (FESEM). Strong FTIR absorption bands at 400–600 cm{sup −1} confirm the formation of ferrite structure. Increase of porosity is attributed to the grain size. Doping with Antimony results for decrease in saturation magnetization and increase in coercivity. An initial increase of saturation magnetization for x=0.1 is attributed to the unusually high density. Reversed trend of coercivity with crystallite size are observed. Higher value of dielectric constant ε′(ω) is attributed to the formation of excess of Fe{sup 2+} ions caused by aliovalent doping of Sb{sup 5+} ions. Variation of dielectric constant infers hopping type of conductivity mechanism. The dielectric loss factor tanδ attains lower values of ∼10{sup −2}. High ac resistivity ρ(ω) of 10{sup 8} Ω cm is witnessed for antimony doped ferrites. Higher saturation magnetization and enhanced dielectric response directs for a possible utility as microwave oscillators and switches.

  12. Investigation of SiO2 thin films dielectric constant using ellipsometry technique

    Directory of Open Access Journals (Sweden)

    P Sangpour

    2014-11-01

    Full Text Available In this paper, we studied the optical behavior of SiO2 thin films prepared via sol-gel route using spin coating deposition from tetraethylorthosilicate (TEOS as precursor. Thin films were annealed at different temperatures (400-600oC. Absorption edge and band gap of thin layers were measured using UV-Vis spectrophotometery. Optical refractive index and dielectric constant were measured by ellipsometry technique. Based on our atomic force microscopic (AFM and ellipsometry results, thin layers prepared through this method showed high surface area, and high porosity ranging between 4.9 and 16.9, low density 2 g/cm, and low dielectric constant. The dielectric constant and porosity of layers increased by increasing the temperature due to the changes in surface roughness and particle size.

  13. Investigation of the development of dielectric-barrier discharge instabilities in excimer lamp

    Science.gov (United States)

    Bouchachia, A.; Belasri, A.; Harrache, Z.; Amir Aid, D.

    2017-11-01

    This work represents a study of the formation and propagation of the streamer during a pulse in a plasma cell with dielectric barriers containing a Ne/Xe gas mixture. It is based on a longitudinal mono-dimensional model of the dielectric barrier discharge. In this model, we show the possibility of streamers development in the cathode sheath and its propagation during the plasma formation stage. The model gives the spatiotemporal variations of the propagation speed, the electric field, and the charged particle density of the streamer's head.

  14. Investigations of structural, dielectric and optical properties on silicon ion irradiated glycine monophosphate single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Kanagasekaran, T. [Department of Physics, Anna University, Chennai 600 025 (India); Department of Physics and Astrophysics, University of Delhi, New Delhi 110 007 (India); Mythili, P. [Department of Physics, Anna University, Chennai 600 025 (India); Bhagavannarayana, G. [Materials Characterization Division, National Physical Laboratory, New Delhi 110012 (India); Kanjilal, D. [Inter University Accelerator Centre, New Delhi 110 067 (India); Gopalakrishnan, R. [Department of Physics, Anna University, Chennai 600 025 (India)], E-mail: krgkrishnan@annauniv.edu

    2009-08-01

    The 50 MeV silicon ion irradiation induced modifications on structural, optical and dielectric properties of solution grown glycine monophosphate (GMP) crystals were studied. The high-resolution X-ray diffraction study shows the unaltered value of integrated intensity on irradiation. The dielectric constant as a function of frequency and temperature was studied. UV-visible studies reveal the decrease in bandgap values on irradiation and presence of F-centers. The fluorescence spectrum shows the existence of some energy levels, which remains unaffected after irradiation. The scanning electron micrographs reveal the defects formed on irradiation.

  15. Investigations on Structural, Mechanical, and Dielectric Properties of PVDF/Ceramic Composites

    Directory of Open Access Journals (Sweden)

    Anshuman Srivastava

    2015-01-01

    Full Text Available Polymer ceramic composites are widely used for embedded capacitor application. In the present work PVDF has been used as a matrix and CCTO and LaCCTO have been used as reinforcement. Extrusion process has been used for the synthesis of composites. X-ray diffraction (XRD patterns confirm the formation of single phase CCTO, and LaCCTO in its pure as well as composite state. It is found that La doping in CCTO considerably increases the dielectric constant and reduces the dielectric loss. A similar trend is observed in the composites with the increasing content of CCTO and LaCCTO.

  16. Application of phenomenologic approach to an investigation of the induced gyroanisotropic phenomena in dielectrics

    Energy Technology Data Exchange (ETDEWEB)

    Kharkyanen, V N; Petrov, E G

    1975-01-01

    The paper presents a group-theoretical method of obtaining the contribution in tensor of transverse dielectrical permeability of magnetic and nonmagnetic dielectrics from specific transitions forbidden in zero approximation in some axial perturbation. The axial perturbation mentioned above permits the transitions and changes the optical symmetry of a crystal in the frequencies of specific transitions depending upon the type of the transition. The external electric and magnetic fields can be chosen as the axial perturbation. This allows one to change the optical symmetry of a crystal in the vicinity of the given transition. (auth)

  17. Investigation of the system aluminum soap-hydrocarbon by the dielectric method

    Energy Technology Data Exchange (ETDEWEB)

    Lozovaya, V.I.; Dagaev, V.A.; Mankovskaya, N.K.

    The plots of the dielectric parameters (epsilon, tg delta) vs. temperature, obtained during heating of aluminum disoap suspensions in organic solvents, show 2 maxima. The first is associated with the gelation process in the system, and the second with the transition of the colloidal solution into a true one. (11 refs.)

  18. Theoretical investigation of dielectric corona pre-ionization TEA nitrogen laser based on transmission line method

    Science.gov (United States)

    Bahrampour, Alireza; Fallah, Robabeh; Ganjovi, Alireza A.; Bahrampour, Abolfazl

    2007-07-01

    This paper models the dielectric corona pre-ionization, capacitor transfer type of flat-plane transmission line traveling wave transverse excited atmospheric pressure nitrogen laser by a non-linear lumped RLC electric circuit. The flat-plane transmission line and the pre-ionizer dielectric are modeled by a lumped linear RLC and time-dependent non-linear RC circuit, respectively. The main discharge region is considered as a time-dependent non-linear RLC circuit where its resistance value is also depends on the radiated pre-ionization ultra violet (UV) intensity. The UV radiation is radiated by the resistance due to the surface plasma on the pre-ionizer dielectric. The theoretical predictions are in a very good agreement with the experimental observations. The electric circuit equations (including the ionization rate equations), the equations of laser levels population densities and propagation equation of laser intensities, are solved numerically. As a result, the effects of pre-ionizer dielectric parameters on the electrical behavior and output laser intensity are obtained.

  19. Investigation of the annealing temperature effect on structural, morphology, dielectric and magnetic properties of BiFeO3 nanoparticles

    Science.gov (United States)

    Ranjbar, M.; Ghazi, M. E.; Izadifard, M.

    2018-06-01

    In this paper we have investigated the annealing temperature effect on the structure, morphology, dielectric and magnetic properties of sol-gel synthesized multiferroic BiFeO3 nanoparticles. X-ray diffraction spectroscopy revealed that all the samples have rhombohedrally distorted perovskite structure and the most pure BFO phase is obtained on the sample annealed at 800 °C. Field emission scanning electron microscopy (FESEM) revealed that increasing annealing temperature would increase the particle size. Decrease in dielectric constant was also observed by increasing annealing temperature. Vibrating sample method (VSM) analysis confirmed that samples annealed at 500-700 °C with particle size below the BFO's spiral spin structure length, have well saturated M-H curve and show ferromagnetic behavior.

  20. Poly(methyl methacrylate) as a self-assembled gate dielectric for graphene field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Sanne, A.; Movva, H. C. P.; Kang, S.; McClellan, C.; Corbet, C. M.; Banerjee, S. K. [Microelectronics Research Center, University of Texas, Austin, Texas 78758 (United States)

    2014-02-24

    We investigate poly(methyl methacrylate) (PMMA) as a low thermal budget organic gate dielectric for graphene field effect-transistors (GFETs) based on a simple process flow. We show that high temperature baking steps above the glass transition temperature (∼130 °C) can leave a self-assembled, thin PMMA film on graphene, where we get a gate dielectric almost for “free” without additional atomic layer deposition type steps. Electrical characterization of GFETs with PMMA as a gate dielectric yields a dielectric constant of k = 3.0. GFETs with thinner PMMA dielectrics have a lower dielectric constant due to decreased polarization arising from neutralization of dipoles and charged carriers as baking temperatures increase. The leakage through PMMA gate dielectric increases with decreasing dielectric thickness and increasing electric field. Unlike conventional high-k gate dielectrics, such low-k organic gate dielectrics are potentially attractive for devices such as the proposed Bilayer pseudoSpin Field-Effect Transistor or flexible high speed graphene electronics.

  1. Investigations on electrical conductivity and dielectric properties of Na doped ZnO synthesized from sol gel method

    Energy Technology Data Exchange (ETDEWEB)

    Tabib, Asma; Sdiri, Nasr [Laboratoire de Physico-Chimie des Matériaux Minéraux et leurs Applications, Centre National de Recherches en Sciences des Matériaux, B.P. 95 Hammam-Lif, 2050 (Tunisia); Elhouichet, Habib, E-mail: habib.elhouichet@fst.rnu.tn [Laboratoire de Physico-Chimie des Matériaux Minéraux et leurs Applications, Centre National de Recherches en Sciences des Matériaux, B.P. 95 Hammam-Lif, 2050 (Tunisia); Département de Physique, Faculté des Sciences de Tunis, University Tunis El Manar, Tunis 2092 (Tunisia); Férid, Mokhtar [Laboratoire de Physico-Chimie des Matériaux Minéraux et leurs Applications, Centre National de Recherches en Sciences des Matériaux, B.P. 95 Hammam-Lif, 2050 (Tunisia)

    2015-02-15

    Highlights: • ZnO nanoparticles doped with Na were prepared from sol-gel method. • Electric conductivity and dielectric properties were investigated. • The ZnO conductivity is estimated to be of p-type for critical Na doping of 1.5% at. - Abstract: Na doped ZnO nanoparticles (NPs) were elaborated by sol gel technique. The X-ray diffraction patterns show that the peaks are indexed to the hexagonal structure without any trace of an extra phase. Electric and dielectric properties were investigated using complex impedance spectroscopy. The impedance spectra were analyzed in terms of equivalent circuits involving resistors, capacitors and constant phase elements (CPE). The contribution of grain boundary resistance to the total resistance of the system is remarkable. The AC conductivity increases with temperature following the Arrhenius law, with single apparent activation energy for conduction process. The frequency dependence of the electric conductivity follows a simple power law behavior, in according to relation σ{sub AC}(ω) = σ(0) + A ω{sup s}, where s is smaller than 1. The analysis of dc conductivity indicates that the conduction is ionic in nature. The study of its variation, at fixed temperature, with Na content shows sharp decrease which is explained by the formation of Na{sub Zn} acceptor. It was found that the dc conductivity reaches its minimum value for critical Na concentration of 1.5% at which the conductivity is estimated to be of p-type. Impedance and modulus study reveals the temperature dependent non-Debye type relaxation phenomenon. Dielectric studies revealed a promising dielectric properties (relatively high ε′ at low frequencies and low loss at high frequencies). In the low-frequency region, the values of M′ tends to zero suggesting negligible or absent electrode polarization phenomenon. The frequency dependent maxima in the imaginary modulus are found to obey to Arrhenius law.

  2. Investigation of mechanism of anode plasma formation in ion diode with dielectric anode

    International Nuclear Information System (INIS)

    Pushkarev, A.

    2015-01-01

    The results of investigation of the anode plasma formation in a diode with a passive anode in magnetic insulation mode are presented. The experiments have been conducted using the BIPPAB-450 ion accelerator (350–400 kV, 6–8 kA, 80 ns) with a focusing conical diode with B r external magnetic field (a barrel diode). For analysis of plasma formation at the anode and the distribution of the ions beam energy density, infrared imaging diagnostics (spatial resolution of 1–2 mm) is used. For analysis of the ion beam composition, time-of-flight diagnostics (temporal resolution of 1 ns) were used. Our studies have shown that when the magnetic induction in the A-C gap is much larger than the critical value, the ion beam energy density is close to the one-dimensional Child-Langmuir limit on the entire working surface of the diode. Formation of anode plasma takes place only by the flashover of the dielectric anode surface. In this mode, the ion beam consists primarily of singly ionized carbon ions, and the delay of the start of formation of the anode plasma is 10–15 ns. By reducing the magnetic induction in the A-C gap to a value close to the critical one, the ion beam energy density is 3–6 times higher than that calculated by the one-dimensional Child-Langmuir limit, but the energy density of the ion beam is non-uniform in cross-section. In this mode, the anode plasma formation occurs due to ionization of the anode material with accelerated electrons. In this mode, also, the delay in the start of the formation of the anode plasma is much smaller and the degree of ionization of carbon ions is higher. In all modes occurred effective suppression of the electronic component of the total current, and the diode impedance was 20–30 times higher than the values calculated for the mode without magnetic insulation of the electrons. The divergence of the ion beam was 4.5°–6°

  3. Investigating the performance and properties of dielectric elastomer actuators as a potential means to actuate origami structures

    International Nuclear Information System (INIS)

    Ahmed, S; Ounaies, Z; Frecker, M

    2014-01-01

    Origami engineering aims to combine origami principles with advanced materials to yield active origami shapes, which fold and unfold in response to external stimuli. This paper explores the potential and limitations of dielectric elastomers (DEs) as the enabling material in active origami engineering. DEs are compliant materials in which the coupled electro-mechanical actuation takes advantage of their low modulus and high breakdown strength. Until recently, prestraining of relatively thick DE materials was necessary in order to achieve the high electric fields needed to trigger electrostatic actuation without inducing a dielectric breakdown. Although prestrain improves the breakdown strength of the DE films and reduces the voltage required for actuation, the need for a solid frame to retain the prestrain state is a limitation for the practical implementation of DEs, especially for active origami structures. However, the recent availability of thinner DE materials (50 μm, 130 μm, 260 μm) has made DEs a likely medium for active origami. In this work, the folding and unfolding of DE multilayered structures, along with the realization of origami-inspired 3D shapes, are explored. In addition, an exhaustive study on the fundamentals of DE actuation is done by directly investigating the thickness actuation mechanism and comparing their performance using different electrode types. Finally, changes in dielectric permittivity as a function of strain, electrode type and applied electric field are assessed and analyzed. These fundamental studies are key to obtaining more dramatic folding and to realizing active origami structures using DE materials. (paper)

  4. Investigation of terbium scandate as an alternative gate dielectric in fully depleted transistors

    Science.gov (United States)

    Roeckerath, M.; Lopes, J. M. J.; Özben, E. Durǧun; Urban, C.; Schubert, J.; Mantl, S.; Jia, Y.; Schlom, D. G.

    2010-01-01

    Terbium scandate thin films were deposited by e-gun evaporation on (100) silicon substrates. Rutherford backscattering spectrometry and x-ray diffraction studies revealed homogeneous chemical compositions of the films. A dielectric constant of 26 and CV-curves with small hystereses were measured as well as low leakage current densities of <1 nA/cm2. Fully depleted n-type field-effect transistors on thin silicon-on-insulator substrates with terbium scandate gate dielectrics were fabricated with a gate-last process. The devices show inverse subthreshold slopes of 80 mV/dec and a carrier mobility for electrons of 225 cm2/V•s was extracted.

  5. Measurements of Schottky barrier at the low-k SiOC:H/Cu interface using vacuum ultraviolet photoemission spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Guo, X.; Pei, D.; Zheng, H.; Shohet, J. L. [Plasma Processing and Technology Laboratory and Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); King, S. W. [Logic Technology Development, Intel Corporation, Hillsboro, Oregon 97124 (United States); Lin, Y.-H.; Fung, H.-S.; Chen, C.-C. [National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan (China); Nishi, Y. [Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States)

    2015-12-07

    The band alignment between copper interconnects and their low-k interlayer dielectrics is critical to understanding the fundamental mechanisms involved in electrical leakage in low-k/Cu interconnects. In this work, vacuum-ultraviolet (VUV) photoemission spectroscopy is utilized to determine the potential of the Schottky barrier present at low-k a-SiOC:H/Cu interfaces. By examining the photoemission spectra before and after VUV exposure of a low-k a-SiOC:H (k = 3.3) thin film fabricated by plasma-enhanced chemical-vapor deposition on a polished Cu substrate, it was found that photons with energies of 4.9 eV or greater can deplete accumulated charge in a-SiOC:H films, while VUV photons with energies of 4.7 eV or less, did not have this effect. These critical values were identified to relate the electric potential of the interface barrier between the a-SiOC:H and the Cu layers. Using this method, the Schottky barrier at the low-k a-SiOC:H (k = 3.3)/Cu interface was determined to be 4.8 ± 0.1 eV.

  6. Investigation on the performance of a viscoelastic dielectric elastomer membrane generator.

    Science.gov (United States)

    Zhou, Jianyou; Jiang, Liying; Khayat, Roger E

    2015-04-21

    Dielectric elastomer generators (DEGs), as a recent transduction technology, harvest electrical energy by scavenging mechanical energy from diverse sources. Their performance is affected by various material properties and failure modes of the dielectric elastomers. This work presents a theoretical analysis on the performance of a dielectric elastomer membrane generator under equi-biaxial loading conditions. By comparing our simulation results with the experimental observations existing in the literature, this work considers the fatigue life of DE-based devices under cyclic loading for the first time. From the simulation results, it is concluded that the efficiency of the DEG can be improved by raising the deforming rate and the prescribed maximum stretch ratio, and applying an appropriate bias voltage. However, the fatigue life expectancy compromises the efficiency improvement of the DEG. With the consideration of the fatigue life, applying an appropriate bias voltage appears to be a more desirable way to improve the DEG performance. The general framework developed in this work is expected to provide an increased understanding on the energy harvesting mechanisms of the DEGs and benefit their optimal design.

  7. Investigation of the phase formation and dielectric properties of Bi7Ta3O18

    International Nuclear Information System (INIS)

    Chon, M.P.; Tan, K.B.; Khaw, C.C.; Zainal, Z.; Taufiq Yap, Y.H.; Chen, S.K.; Tan, P.Y.

    2014-01-01

    Highlights: • Synthesis condition of Bi 7 TaO 3 O 18 had been determined. • Recombination of intermediate BiTaO 4 and Bi 3 TaO 7 phases are required for the Bi 7 TaO 3 O 18 phase formation. • Stable material as confirmed by thermal and structural analyses. • Typical ferroelectric showing high dielectric constants and low losses. • Resonance and thermal activated polarisation processes are responsible for the excellent dielectric characteristic. -- Abstract: Polycrystalline Bi 7 Ta 3 O 18 was synthesised at the firing temperature of 950 °C over 18 h via conventional solid state method. It crystallised in a monoclinic system with space group C2/m, Z = 4 similar to that reported diffraction pattern in the Inorganic Crystal Structure Database (ICSD), 1-89-6647. The refined lattice parameters were a = 34.060 (3) Å, b = 7.618 (9) Å, c = 6.647 (6) Å with α = γ = 90° and β = 109.210 (7), respectively. The intermediate phase was predominantly in high-symmetry cubic structure below 800 °C and finally evolved into a low-symmetry monoclinic structured, Bi 7 Ta 3 O 18 at 950 °C. The sample contained grains of various shapes with different orientations in the size ranging from 0.33–22.70 μm. The elemental analysis showed the sample had correct stoichiometry with negligible Bi 2 O 3 loss. Bi 7 Ta 3 O 18 was thermally stable and it exhibited a relatively high relative permittivity, 241 and low dielectric loss, 0.004 at room temperature, ∼30 °C and frequency of 1 MHz

  8. Fractal characteristics investigation on electromagnetic scattering from 2-D Weierstrass fractal dielectric rough surface

    International Nuclear Information System (INIS)

    Ren Xincheng; Guo Lixin

    2008-01-01

    A normalized two-dimensional band-limited Weierstrass fractal function is used for modelling the dielectric rough surface. An analytic solution of the scattered field is derived based on the Kirchhoff approximation. The variance of scattering intensity is presented to study the fractal characteristics through theoretical analysis and numerical calculations. The important conclusion is obtained that the diffracted envelope slopes of scattering pattern can be approximated as a slope of linear equation. This conclusion will be applicable for solving the inverse problem of reconstructing rough surface and remote sensing. (classical areas of phenomenology)

  9. Theoretical investigation of resonance frequencies in long wavelength electromagnetic wave scattering process from plasma prolate and oblate spheroids placed in a dielectric layer

    Science.gov (United States)

    Ahmadizadeh, Y.; Jazi, B.; Abdoli-Arani, A.

    2014-01-01

    Response of a prolate spheroid plasma and/or an oblate spheroid plasma in presence of long wavelength electromagnetic wave has been studied. The resonance frequencies of these objects are obtained and it is found that they reduce to the resonance frequency of spherical cold plasma. Moreover, the resonant frequencies of prolate spheroid plasma and oblate spheroid plasma covered by a dielectric are investigated as well. Furthermore, their dependency on dielectric permittivity and geometry dimensions is simulated.

  10. Indoor air purification by dielectric barrier discharge combined with ionic wind: physical and microbiological investigations

    Science.gov (United States)

    Timmermann, E.; Prehn, F.; Schmidt, M.; Höft, H.; Brandenburg, R.; Kettlitz, M.

    2018-04-01

    A non-thermal plasma source based on a surface dielectric barrier discharge (DBD) is developed for purification of recirculating air in operating theatres in hospitals. This is a challenging application due to high flow rates, short treatment times and the low threshold for ozone in the ventilated air. Therefore, the surface DBD was enhanced in order to generate an ionic wind, which can deflect and thus, filter out airborne microorganisms. Electrical and gas diagnostics as well as microbiological experiments were performed in a downscaled plasma source under variation of various electrical parameters, but application-oriented airflow velocity and humidity. The dependence of electrical power and ozone concentration as well as charged particles in the plasma treated air on frequency, voltage and relative humidity is presented and discussed. The presence of humidity causes a more conductive dielectric surface and thus a weaker plasma formation, especially at low frequency. The airborne test bacteria, Escherichia coli, showed significant effect to plasma treatment (up to 20% reduction) and to plasma with ionic wind (up to 90% removal); especially a configuration with 70% removal and an accompanying ozone concentration of only 360 ppb is promising for future application.

  11. Positron and positronium annihilation in low-dielectric-constant films studied by a pulsed positron beam

    International Nuclear Information System (INIS)

    Suzuki, R.; Ohdaira, T.; Kobayashi, Y.; Ito, K.; Yu, R.S.; Shioya, Y.; Ichikawa, H.; Hosomi, H.; Ishikiriyama, K.; Shirataki, H.; Matsuno, S.; Xu, J.

    2004-01-01

    Positron and positronium annihilation in porous low-dielectric-constant (low-k) films deposited by plasma-enhanced chemical vapor deposition (PECVD) and spin-on dielectric (SOD) have been investigated by means of positron annihilation lifetime spectroscopy (PALS) and age-momentum correlation (AMOC) spectroscopy with a pulsed slow positron beam. The ortho-positronium (o-Ps) lifetime strongly depends on the deposition condition. In general, PECVD low-k films have shorter o-Ps lifetimes than SOD low-k films, indicating PECVD low-k films have smaller pores. Since o-Ps diffusion and escaping from the surface occurs in most of porous SOD films, three-gamma annihilation measurement is important. To investigate o-Ps behavior in SOD films, we have carried out two-dimensional (2D) PALS measurement, which measures annihilation time and pulse-height of the scintillation detector simultaneously. Monte-Carlo simulation of the o-Ps diffusion and escaping in porous films has been carried out to simulate the 2D-PALS results. (orig.)

  12. EVALUATION OF DIELECTRIC CURING MONITORING INVESTIGATING LIGHT-CURING DENTAL FILLING COMPOSITES

    Directory of Open Access Journals (Sweden)

    Johannes Steinhaus

    2011-05-01

    Full Text Available The aim of this study is the evaluation of a dielectric analysis (DEA method monitoring the curing behaviour of a light curing dental filling material in real-time. The evaluation is to extract the influence of light intensity on the photo-curing process of dental composite filling materials. The intensity change is obtained by measuring the curing process at different sample depth. It could be shown that increasing sample thickness, and therefore exponentially decreasing light intensity, causes a proportional decrease in the initial curing rate. Nevertheless, the results give rise to the assumption that lower illumination intensities over a long period cause higher overall conversion, and thus better mechanical properties. This would allow for predictions of the impact of different curing-rates on the final mechanical properties.

  13. Component dynamics in polymer blends a combined QENS and dielectric spectroscopy investigation

    CERN Document Server

    Hofmann, S; Arbe, A; Colmenero, J; Faragó, B

    2002-01-01

    The individual dynamics of the two constituents of a binary polymer blend was studied by means of quasielastic neutron scattering and dielectric spectroscopy (DS). The combination of neutron spin-echo and backscattering techniques allowed us to cover the complete crossover from entropy-driven chain dynamics on mesoscopic scales to the alpha relaxation on local length scales. The observed blending effects on the respective relaxation times suggest a purely dynamic origin of the dynamic heterogeneity in polymer blends at temperatures well above the glass-transition temperature without the need to assume local phase separation. In contrast, the results from DS experiments towards much lower temperatures indicate systematic deviations of the segmental dynamics in the blend from its mean-field-like behavior at high temperatures. This additionally increases the dynamic heterogeneity in the segmental dynamics of the two components in the mixture. In the case of the chain dynamics, no similar effect could be observed...

  14. Experimental investigation on electrical characteristics and dose measurement of dielectric barrier discharge plasma device used for therapeutic application.

    Science.gov (United States)

    Shahbazi Rad, Zahra; Abbasi Davani, Fereydoun

    2017-04-01

    In this research, a Dielectric Barrier Discharge (DBD) plasma device operating in air has been made. The electrical characteristics of this device like instantaneous power, dissipated power, and discharge capacitance have been measured. Also, the effects of applied voltage on the dissipated power and discharge capacitance of the device have been investigated. The determination of electrical parameters is important in DBD plasma device used in living tissue treatment for choosing the proper treatment doses and preventing the destructive effects. The non-thermal atmospheric pressure DBD plasma source was applied for studying the acceleration of blood coagulation time, in vitro and wound healing time, in vivo. The citrated blood drops coagulated within 5 s treatment time by DBD plasma. The effects of plasma temperature and electric field on blood coagulation have been studied as an affirmation of the applicability of the constructed device. Also, the effect of constructed DBD plasma on wound healing acceleration has been investigated.

  15. Numerical Investigation of Scattering from a Surface Dielectric Barrier Discharge Actuator under Atmospheric Pressure

    Directory of Open Access Journals (Sweden)

    Yuna Kim

    2018-01-01

    Full Text Available Surface dielectric barrier discharge (SDBD, which is widely used to control turbulence in aerodynamics, has a significant effect on the radar cross-section (RCS. A four-way linearly synthesized SDBD air plasma actuator is designed to bolster the plasma effects on electromagnetic waves. The diffraction angle is calculated to predict the RCS because of the periodic structure of staggered electrodes. The simplified plasma modeling is utilized to calculate the inhomogeneous surface plasma distribution. Monostatic RCS shows the diffraction in the plane perpendicular to the electrode array and the notable distortion by plasma. In comparison, the overall pattern is maintained in the parallel plane with minor plasma effects. The trends also appear in the bistatic RCS, which has a significant difference in the observation plane perpendicular to the electrodes. The peaks by Bragg’s diffraction are shown, and the RCS is reduced by 10 dB in a certain range by the plasma effect. The diffraction caused by the actuator and the inhomogeneous air plasma should be considered in designing an SDBD actuator for a wide range of application.

  16. Investigations on structural, vibrational and dielectric properties of nanosized Cu doped Mg-Zn ferrites

    Energy Technology Data Exchange (ETDEWEB)

    Yadav, Anand [School of Physics, Vigyan Bhavan, Devi Ahilya University, Khandwa Road Campus, Indore 452001 (India); Department of Physics, MEDICAPS Institute of Science and Technology, Pithampur 453331 (India); Rajpoot, Rambabu; Dar, M. A.; Varshney, Dinesh, E-mail: vdinesh33@rediffmail.com, E-mail: anand.212@gmail.com [School of Physics, Vigyan Bhavan, Devi Ahilya University, Khandwa Road Campus, Indore 452001 (India)

    2016-05-23

    Transition metal Cu{sup 2+} doped Mg-Zn ferrite [Mg{sub 0.5}Zn{sub 0.5-x}Cu{sub x}Fe{sub 2}O{sub 4} (0.0 ≤ x ≤ 0.5)] were prepared by sol gel auto combustion (SGAC) method to probe the structural, vibrational and electrical properties. X-ray diffraction (XRD) pattern reveals a single-phase cubic spinel structure without the presence of any secondary phase corresponding to other structure. The average particle size of the parent Mg{sub 0.5}Zn{sub 0.5}Fe{sub 2}O{sub 4} is found to be ~29.8 nm and is found to increase with Cu{sup 2+} doping. Progressive reduction in lattice parameter of Mg{sub 0.5}Zn{sub 0.5}Fe{sub 2}O{sub 4} has been observed due to difference in ionic radii of cations with improved Cu doping. Spinel cubic structure is further confirmed by Raman spectroscopy. Small shift in Raman modes towards higher wave number has been observed in doped Mg-Zn ferrites. The permittivity and dielectric loss decreases at lower doping and increases at higher order doping of Cu{sup 2+}.

  17. Polymer chain dynamics in epoxy based composites as investigated by broadband dielectric spectroscopy

    Directory of Open Access Journals (Sweden)

    Mohammad K. Hassan

    2016-03-01

    Full Text Available Epoxy networks of the diglycidyl ether of bisphenol A (DGEBA were prepared using 3,3′- and 4,4′-diaminodiphenyl sulfone isomer crosslinkers. Secondary relaxations and the glass transitions of resultant networks were probed using broadband dielectric spectroscopy (BDS. A sub-Tg γ relaxation peak for both networks shifts to higher frequencies (f with increasing temperature in Arrhenius fashion, both processes having the same activation energy and being assigned to phenyl ring flipping in DGEBA chains. A β relaxation is assigned to local motions of dipoles that were created during crosslinking reactions. 4,4′-based networks exhibited higher Tg relative to 3,3′-based networks as per dynamic mechanical as well as BDS analyses. The Vogel–Fulcher–Tammann–Hesse equation fitted well to relaxation time vs. temperature data and comparison of Vogel temperatures suggests lower free volume per mass for the 3,3′-based network. The Kramers–Krönig transformation was used to directly calculate dc-free ɛ″ vs. f data from experimental ɛ′ vs. f data. Distribution of relaxation times (DRT curves are bi-modal for the 3,3′-crosslinked resin suggesting large-scale microstructural heterogeneity as opposed to homogeneity for the 4,4′-based network whose DRT consists of a single peak.

  18. Investigation of thermal expansion and compressibility of rare-earth orthovanadates using a dielectric chemical bond method.

    Science.gov (United States)

    Zhang, Siyuan; Zhou, Shihong; Li, Huaiyong; Li, Ling

    2008-09-01

    The chemical bond properties, lattice energies, linear expansion coefficients, and mechanical properties of ReVO 4 (Re = La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Sc, Y) are investigated systematically by the dielectric chemical bond theory. The calculated results show that the covalencies of Re-O bonds are increasing slightly from La to Lu and that the covalencies of V-O bonds in crystals are decreasing slightly from La to Lu. The linear expansion coefficients decrease progressively from LaVO 4 to LuVO 4; on the contrary, the bulk moduli increase progressively. Our calculated results are in good agreement with some experimental values for linear expansion coefficients and bulk moduli.

  19. Experimental and numerical investigation of a ceramic dielectric resonator (DRA): CaCu3Ti4O12 (CCTO)

    International Nuclear Information System (INIS)

    Almeida, A.F.L.; Silva, R.R.; Rocha, H.H.B.; Fechine, P.B.A.; Cavalcanti, F.S.A.; Valente, M.A.; Freire, F.N.A.; Sohn, R.S.T.M.

    2008-01-01

    In this study, the CaCu 3 Ti 4 O 12 (CCTO) ceramic phase was synthesized by microwave heating in a much shorter time compared to the conventional heating methods. The results indicate that microwave processing is a promising method for preparing CCTO ceramics. CCTO was prepared using a domestic microwave oven operated at 2.45 GHz with 800 W. After a few minutes of microwave irradiation the formation of CCTO was confirmed by X-ray powder diffraction. The CCTO ceramic was studied in the medium-frequency (MF) range (100 Hz-1 MHz) and in the microwave range of frequencies. The experimental and theoretical characteristics of the dielectric resonator antenna are investigated

  20. Investigation of atmospheric dielectric barrier discharge and its application to surface modification of textile material

    International Nuclear Information System (INIS)

    Xiaoliang Tang; Gao Qiu; Hankun Xie; Xianping Feng

    2005-01-01

    The dielectric barrier discharge (DBD) is characterized by the presence of at least one insulating layer in contact with the discharge between two planar or cylindrical electrodes connected to an ac power supply. In this paper, the spectral lines of plasma emission at atmospheric pressure were recorded by using a grating spectrograph, and all signals will be directly and immediately sent to the computer for data processing and analysis during the experiments. The spectrum lines of nitrogen, helium and argon plasma emission at atmospheric pressure were separately recorded and qualitatively analyzed using spectral diagnosis equipment of atmospheric pressure DBD plasma. The spectrum lines of the second positive system of nitrogen (c 3 π μ → B 3 Π g ), two characteristic spectrum lines of helium (3 1 P 1 → 2 1 S 0 , 3 3 D → 3 3 P), and all of neutral argon atom spectrum lines in the range 680 to 780 nm are recognized. For controlling the process of material surface modification promptly, the electron temperature of DBD plasma is quantitatively analyzed using relative intensity of argon spectrum lines. The relationships among the plasma parameters, such as discharge current and discharge power measured by Lissajous figure of the oscilloscope, were analyzed by using improved DBD equipment. The variation of plasma discharge current following the change of discharge gaps indicates an existence of critical gap distance. When the gap between electrodes is less than that the critical gap, a quasi-stable atmospheric pressure DBD plasma source can be achieved after carefully controlled discharge voltage and current. The experimental results indicate that a critical discharge gap is an important parameter to improve the quality of materials processing. The result is of great importance to DBD at atmospheric pressure and its application to materials processing. (author)

  1. Low-k films modification under EUV and VUV radiation

    International Nuclear Information System (INIS)

    Rakhimova, T V; Rakhimov, A T; Mankelevich, Yu A; Lopaev, D V; Kovalev, A S; Vasil'eva, A N; Zyryanov, S M; Kurchikov, K; Proshina, O V; Voloshin, D G; Novikova, N N; Krishtab, M B; Baklanov, M R

    2014-01-01

    Modification of ultra-low-k films by extreme ultraviolet (EUV) and vacuum ultraviolet (VUV) emission with 13.5, 58.4, 106, 147 and 193 nm wavelengths and fluences up to 6 × 10 18  photons cm −2 is studied experimentally and theoretically to reveal the damage mechanism and the most ‘damaging’ spectral region. Organosilicate glass (OSG) and organic low-k films with k-values of 1.8–2.5 and porosity of 24–51% are used in these experiments. The Si–CH 3 bonds depletion is used as a criterion of VUV damage of OSG low-k films. It is shown that the low-k damage is described by two fundamental parameters: photoabsorption (PA) cross-section σ PA and effective quantum yield φ of Si–CH 3 photodissociation. The obtained σ PA and φ values demonstrate that the effect of wavelength is defined by light absorption spectra, which in OSG materials is similar to fused silica. This is the reason why VUV light in the range of ∼58–106 nm having the highest PA cross-sections causes strong Si–CH 3 depletion only in the top part of the films (∼50–100 nm). The deepest damage is observed after exposure to 147 nm VUV light since this emission is located at the edge of Si–O absorption, has the smallest PA cross-section and provides extensive Si–CH 3 depletion over the whole film thickness. The effective quantum yield slowly increases with the increasing porosity but starts to grow quickly when the porosity exceeds the critical threshold located close to a porosity of ∼50%. The high degree of pore interconnectivity of these films allows easy movement of the detached methyl radicals. The obtained results have a fundamental character and can be used for prediction of ULK material damage under VUV light with different wavelengths. (paper)

  2. Experimental and theoretical investigation of the effect of SiO2 content in gate dielectrics on work function shift induced by nanoscale capping layers

    KAUST Repository

    Caraveo-Frescas, J. A.; Wang, H.; Schwingenschlö gl, Udo; Alshareef, Husam N.

    2012-01-01

    The impact of SiO2 content in ultrathin gate dielectrics on the magnitude of the effective work function (EWF) shift induced by nanoscale capping layers has been investigated experimentally and theoretically. The magnitude of the effective work function shift for four different capping layers (AlN, Al2O3, La2O3, and Gd2O3) is measured as a function of SiO2 content in the gate dielectric. A nearly linear increase of this shift with SiO2 content is observed for all capping layers. The origin of this dependence is explained using density functional theory simulations.

  3. Experimental and theoretical investigation of the effect of SiO2 content in gate dielectrics on work function shift induced by nanoscale capping layers

    KAUST Repository

    Caraveo-Frescas, J. A.

    2012-09-10

    The impact of SiO2 content in ultrathin gate dielectrics on the magnitude of the effective work function (EWF) shift induced by nanoscale capping layers has been investigated experimentally and theoretically. The magnitude of the effective work function shift for four different capping layers (AlN, Al2O3, La2O3, and Gd2O3) is measured as a function of SiO2 content in the gate dielectric. A nearly linear increase of this shift with SiO2 content is observed for all capping layers. The origin of this dependence is explained using density functional theory simulations.

  4. Investigations of dielectric enhancement in (Ta2O5)1-x(TiO2)x ceramics prepared by laser-sintering technique

    International Nuclear Information System (INIS)

    Ji, L.F.; Jiang, Y.J.

    2007-01-01

    The maximum dielectric permittivity of Ti-doped Ta 2 O 5 ceramics may reach 450 by a laser-sintering technique. The aim of this study is to investigate the mechanisms of the dielectric enhancement based on the unique structural and morphological properties of the laser-sintered ceramics. The reason for the dielectric enhancement is due to the crystal structure distortion in the high-temperature phase, the oriented grain growth taking place in a direction deviating from [001] in the laser-sintered ceramics. The concurrent nature of quenching effects, a sharp temperature gradient and mass transfer in liquid phase originated from laser high energy irradiation with strict directivity leads to the structural and morphological properties. (orig.)

  5. Spectroscopic investigations of high-power laser-induced dielectric breakdown in gas mixtures containing carbon monoxide.

    Science.gov (United States)

    Civis, Svatopluk; Babánková, Dagmar; Cihelka, Jaroslav; Sazama, Petr; Juha, Libor

    2008-08-07

    Large-scale plasma was created in gas mixtures containing carbon monoxide by high-power laser-induced dielectric breakdown (LIDB). The composition of the mixtures used corresponded to a cometary and/or meteoritic impact into the Earth's early atmosphere. A multiple-centimeter-sized fireball was created by focusing a single 85 J, 450 ps near-infrared laser pulse into the center of a 15 L gas cell. The excited reaction intermediates that formed in various stages of the LIDB plasma chemical evolution were investigated by optical emission spectroscopy (OES) with temporal resolution. Special attention was paid to any OES signs of molecular ions. However, carbon monoxide cations were registered only if their production was enhanced by Penning ionization, i.e., excess He was added to the CO. The chemical consequences of laser-produced plasma generation in a CO-N 2-H 2O mixture were investigated using high resolution Fourier-transform infrared absorption spectroscopy (FTIR) and gas chromatography (GC). Several simple inorganic and organic compounds were identified in the reaction mixture exposed to ten laser sparks. H 2 (18)O was used to avoid possible contamination. The large laser spark triggered more complex reactivity originating in carbon monoxide than expected, when taking into account the strong triple bond of carbon monoxide causing typically inefficient dissociation of this molecule in electrical discharges.

  6. Investigation of crystal structure, dielectric and magnetic properties in La and Nd co-doped BiFeO{sub 3} multiferroics

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Ompal [Department of Physics, Guru Jambheshwar University of Science & Technology, Hisar 125001, Haryana (India); Agarwal, Ashish, E-mail: aagju@yahoo.com [Department of Physics, Guru Jambheshwar University of Science & Technology, Hisar 125001, Haryana (India); Sanghi, Sujata [Department of Physics, Guru Jambheshwar University of Science & Technology, Hisar 125001, Haryana (India); Das, Amitabh [Solid State Physics Division, Bhabha Atomic Research Centre, Mumbai 400 085 (India); Anju [Department of Physics, Chaudhary Devi Lal University, Sirsa 125025, Haryana (India)

    2017-03-15

    For the investigation of the crystal structure, dielectric properties and magnetic properties of La and Nd co-doped BiFeO{sub 3} multiferroics; Bi{sub 0.8}La{sub 0.2−x}Nd{sub x}FeO{sub 3} (x=0.075, 0.1, 0.125) samples were prepared through solid state reaction method. Rietveld refinement of the obtained XRD patterns shows that there is change in crystal structure in these samples. At higher concentration of La (at x=0.075), the crystal structure was found to have mixed symmetry with rhombohedral and triclinic phases, while with equal concentration of both the dopants (at x=0.1), the structure changes to mixed symmetry having rhombohedral and orthorhombic phases. At higher concentration of Nd (at x=0.125), again mixed symmetry was established having both phases of the previous composition but approximately in reverse fraction. In dielectric analysis, x=0.1 sample showed the highest values of dielectric constant (ε′) and dielectric loss (tan δ). For x=0.125 sample, it was observed that the dielectric constant and dielectric loss response are improved. The magnetic characterization (M–H loops) indicates the significant enhancement in magnetisation with increasing concentration of Nd. Nd doping leads to the destruction of spiral modulation, forming the antiferromagnets, and visualisation of improved magnetisation via canting of spins. - Highlights: • La and Nd co-doped BiFeO{sub 3} were synthesized. • Change in crystal structure is observed. • Significant enhancement in magnetisation is observed.

  7. Investigation of particle reduction and its transport mechanism in UHF-ECR dielectric etching system

    International Nuclear Information System (INIS)

    Kobayashi, Hiroyuki; Yokogawa, Ken'etsu; Maeda, Kenji; Izawa, Masaru

    2008-01-01

    Control of particle transport was investigated by using a UHF-ECR etching apparatus with a laser particle monitor. The particles, which float at a plasma-sheath boundary, fall on a wafer when the plasma is turned off. These floating particles can be removed from the region above the wafer by changing the plasma distribution. We measured the distribution of the rotational temperature of nitrogen molecules across the wafer to investigate the effect of the thermophoretic force. We found that mechanisms of particle transport in directions parallel to the wafer surface can be explained by the balance between thermophoretic and gas viscous forces

  8. Investigation on dielectric relaxation of PMMA-grafted natural rubber incorporated with LiCF3SO3

    International Nuclear Information System (INIS)

    Yap, K.S.; Teo, L.P.; Sim, L.N.; Majid, S.R.; Arof, A.K.

    2012-01-01

    Natural rubber (NR) grafted with 30 wt% poly (methyl methacrylate) (PMMA) and designated as MG30 has been added with varying amounts of LiCF 3 SO 3 . X-ray diffraction (XRD) shows the samples to be amorphous. Fourier transform infrared (FTIR) spectroscopy indicates complexation between the cation of the salt and the oxygen atom of the C=O and -COO- groups of MG30. From electrochemical impedance spectroscopy (EIS), MG30 with 30 wt% LiCF 3 SO 3 salt exhibits the highest ambient conductivity of 1.69×10 -6 S cm -1 and lowest activation energy of 0.24 eV. The dielectric behavior has been analyzed using dielectric permittivity (ε′), dissipation factor (tan δ) and dielectric modulus (M ⁎ ) of the samples. The dielectric constant of pure MG30 has been estimated to be ∼1.86.

  9. Investigation of charge dissipation in jet fuel in a dielectric fuel tank

    Science.gov (United States)

    Kitanin, E. L.; Kravtsov, P. A.; Trofimov, V. A.; Kitanina, E. E.; Bondarenko, D. A.

    2017-09-01

    The electrostatic charge dissipation process in jet fuel in a polypropylene tank was investigated experimentally. Groundable metallic terminals were installed in the tank walls to accelerate the dissipation process. Several sensors and an electrometer with a current measuring range from 10-11 to 10-3 A were specifically designed to study the dissipation rates. It was demonstrated that thanks to the sensors and the electrometer one can obtain reliable measurements of the dissipation rate and look at how it is influenced by the number and locations of the terminals. Conductivity of jet fuel and effective conductivity of the tank walls were investigated in addition. The experimental data agree well with the numerical simulation results obtained using COMSOL software package.

  10. Dielectric spectroscopy investigation of proton transfer processes in carboxymethyl alpha-cyclodextrin polymer cross-linked by epichlorohydrin

    Science.gov (United States)

    Papaioannou, Panagoula K.; Karagianni, Chaido S.; Kakali, Glykeria; Charalampopoulos, Vasileios G.

    2018-03-01

    The carboxymethyl-α-cyclodextrin polymer (cross-linked by epichlorohydrin) is investigated by dielectric spectroscopy over a frequency range of 0.1-100 kHz and the temperature ranges of 137.2-297.6 K (cooling) and 137.2-472 K (heating). Upon cooling to 288.1 K, the ac-conductivity invariance is attributed to slight changes in the topology of the H-bonded chains. From 288.1 to 244.0 K, the ac-conductivity decreases abruptly (following the Arrhenius law with Eα = 0.40 eV), whereas below 244.0 K it presents no important variations. During heating from 137.2 to 302.6 K, no thermal hysteresis is observed. From 302.6 to 364.9 K, the ac-conductivity increases (Eα = 0.71 eV), whereas above 383 K it decreases up to 436.7 K since the dehydration process has been completed and the H-bonded chains can no longer be retained. From 436.7 to 472 K, the ac-conductivity increases again (Eα = 0.76 eV) indicating the formation of "new" H-bonded chains. Curve fitting of various relaxation processes is done by Havriliak-Negami equation at selective temperatures.

  11. Investigation of the effect of dielectric barrier discharge plasma actuators on the radar cross section of an object

    International Nuclear Information System (INIS)

    Wolf, S; Arjomandi, M

    2011-01-01

    The application of dielectric barrier discharge (DBD) plasma as an electromagnetic absorber was investigated by determining the radar cross section (RCS) of a rectangular, flat plate with a DBD plasma actuator array installed on one of its sides. In order to justify the experimental results, the expected effect of plasma actuation on RCS was analysed by determining the attenuation effect of the plasma with the Lorentz model. Due to the very limited life time of the free electrons and the small extent of the plasma sheath, the attenuation was found to be only minimal. The theoretical results have been verified by comparing the measured RCS values of a plate with and without plasma actuation applied on it in a high-frequency anechoic lab. As expected, no significant influence of DBD plasma on RCS was detected. In addition, it was found that the high voltage power supply used as a part of DBD circuitry produced a high level of disturbance even in the microwave range.

  12. Investigation of the effect of dielectric barrier discharge plasma actuators on the radar cross section of an object

    Energy Technology Data Exchange (ETDEWEB)

    Wolf, S; Arjomandi, M [University of Adelaide, Adelaide, South Australia, 5005 (Australia)

    2011-08-10

    The application of dielectric barrier discharge (DBD) plasma as an electromagnetic absorber was investigated by determining the radar cross section (RCS) of a rectangular, flat plate with a DBD plasma actuator array installed on one of its sides. In order to justify the experimental results, the expected effect of plasma actuation on RCS was analysed by determining the attenuation effect of the plasma with the Lorentz model. Due to the very limited life time of the free electrons and the small extent of the plasma sheath, the attenuation was found to be only minimal. The theoretical results have been verified by comparing the measured RCS values of a plate with and without plasma actuation applied on it in a high-frequency anechoic lab. As expected, no significant influence of DBD plasma on RCS was detected. In addition, it was found that the high voltage power supply used as a part of DBD circuitry produced a high level of disturbance even in the microwave range.

  13. Investigation of the dielectric function of solution-processed InGaZnO films using ellipsometry.

    Science.gov (United States)

    Kim, Tae Jung; Yoon, Jae Jin; Hwang, Soo Min; Choi, Jun Hyuk; Hwang, Soon Yong; Ghong, Tae Ho; Barange, Nilesh; Kim, Jun Young; Kim, Young Dong; Joo, Jinho

    2012-07-01

    The optical properties of InGaZnO (IGZO) films grown through the sol-gel process as a function of sintering time were investigated with spectroscopic ellipsometry (SE). The IGZO precursor sol was prepared by mixing In nitrate, Ga nitrate, and Zn acetate at a molar ratio of In:Ga:Zn = 3:1:1. The solution was deposited on a SiO2/Si substrate via spin coating. Sintering was performed at 400 degrees C for 1-15 h in an ambient atmosphere. The optical properties were measured over the range 1.12-6.52 eV via variable angle SE, at room temperature. The angle of incidence was varied from 50 to 70 degrees in 5 degree steps. To extract the pure optical properties of IGZO, multilayer-structure calculation with Tauc-Lorentz dispersion relation for IGZO was performed. The changes in the dielectric function of the IGZO films with varying sintering time were observed. The resultant optical properties can be related to the concentration of oxygen vacancies in the material, which can be controlled by the sintering time.

  14. Characterization of nanoparticle and porous ultra low-k using positron beam

    International Nuclear Information System (INIS)

    Xu, Jun; Moxom, J.; Suzuki, R.; Ohdaira, T.; Mills, A.P. Jr.

    2003-01-01

    Nanoparticle materials are important because they exhibit unique properties due to size effects, quantum tunneling, and quantum confinement. As particle sizes are reduced to the nanometer scale, presence of vacancy clusters is expected to affect properties of nanomaterials. A combination of positron lifetime spectroscopy, which tells size of vacancy clusters, and coincidence Doppler broadening of annihilation radiation, which tell where vacancy clusters are located was used to study defect structures on nanomaterials of Au nanoparticles embedded in MgO. Vacancy clusters were found on the surfaces of Au nanoparticles. When the packing density between multilevel interconnects in microelectronic devices increases, a low dielectric constant material is needed to minimize RC delay. Porous oxide films are some of these new low-k materials that have been actively studied by the microelectronics industry. An ideal porous material would consist of a network of closed, small pores with narrow size distribution. However, large and interconnected pores, so called 'killer pores', result in high current leakage and poor mechanical strength. Clearly, characterization and understanding of pore size and interconnectivity are important to optimize the design of porous materials. Using positron beam, we have found that pore percolation in porous methyl-silsesquioxane (MSQ) films strongly depends on the molecular mass of pore generators. (author)

  15. Preliminary investigation of polystyrene/MoS{sub 2}-Oleylamine polymer composite for potential application as low-dielectric material in microelectronics

    Energy Technology Data Exchange (ETDEWEB)

    Landi, Giovanni, E-mail: glandi@unisa.it [Institute for Polymers, Composites and Biomaterials (IPCB-CNR), P. Enrico Fermi 1, 80055 Portici (Italy); Department of Industrial Engineering, University of Salerno, Via G. Paolo II 132, 84084 Fisciano (Italy); Altavilla, Claudia; Iannace, Salvatore; Sorrentino, Andrea, E-mail: andrea.sorrentino@cnr.it [Institute for Polymers, Composites and Biomaterials (IPCB-CNR), P. Enrico Fermi 1, 80055 Portici (Italy); Ciambelli, Paolo [Department of Industrial Engineering, University of Salerno, Via G. Paolo II 132, 84084 Fisciano (Italy); Centre NANO-MATES, University of Salerno, Fisciano, Via G. Paolo II 132, 84084 Fisciano (Italy); Neitzert, Heinrich C. [Department of Industrial Engineering, University of Salerno, Via G. Paolo II 132, 84084 Fisciano (Italy)

    2015-12-17

    Insulating materials play a vital role in the design and performance of electrical systems for both steady and transient state conditions. Among the other properties, also in this field, polymer nanocomposites promise to offer exciting improvements. Many studies in the last decade has witnessed significant developments in the area of nano-dielectric materials and significant effects of nano-scale fillers on electric, thermal and mechanical properties of polymeric materials have been observed. However, the developments of new and advanced materials to be used the miniaturization of electronic devices fabrication require extensive studies on electrical insulation characteristics of these materials before they can be used in commercial systems. In this work, Polystyrene (PS) composites were prepared by the blend solution method using MoS{sub 2}@Oleylamine nanosheets as filler. The dielectric properties of the resulting comoposite have been investigated at 300K and in the frequency range between 1000 Hz and 1 MHz. The addition of the MoS{sub 2}@Oleylamine nanosheets leads to a decreasing of the relative dielectric constant and of the electrical conductivity measured in the voltage range between ±500V. Thanks to a possibility to tune the electrical permittivity with the control of MoS{sub 2} concentration, these materials could be used as a low-dielectric material in the microelectronics applications.

  16. Dielectric relaxation and spectroscopic investigation of poly hydroxybutyrate PHB blended with polyvinyl acetate PVAc and poly(vinylacetate-co-vinyl alcohol) PACA

    International Nuclear Information System (INIS)

    Abou-Aiad, T.H.M.; Abd-El-Nour, K.N.; Hakim, I.K.; El-Sabee, M.S.

    2005-01-01

    Using frequency response analyzer covering a frequency range from 102 - 106 Hz in a wide range of temperature, the dielectric behaviour of the investigated systems was studied. In order to investigate the relaxation mechanisms of such systems, the dielectric loss data on the frequency domain were analysed using Havriliak-Nagami and/or Frohlich functions in addition to the conductivity term. These mechanisms are discussed in terms of the orientation of the main chain and its related motions. The relaxation times related to both mechanisms noticed for PHB/PVAc blend with composition 50% are found to be higher than those for other compositions. This could be attributed to the interaction that expected through hydrogen bond formation. This result is supported by the data given by FTIR spectroscopy as the carbonyl region at 1750 cm-1 showed a more broad band spectrum when compared with those for the other compositions

  17. Time-dependent dielectric breakdown measurements of porous organosilicate glass using mercury and solid metal probes

    International Nuclear Information System (INIS)

    Pei, Dongfei; Nichols, Michael T.; Shohet, J. Leon; King, Sean W.; Clarke, James S.; Nishi, Yoshio

    2014-01-01

    Time-dependent dielectric breakdown (TDDB) is one of the major concerns for low-k dielectric materials. During plasma processing, low-k dielectrics are subjected to vacuum ultraviolet photon radiation and charged-particle bombardment. To examine the change of TDDB properties, time-to-breakdown measurements are made to porous SiCOH before and after plasma exposure. Significant discrepancies between mercury and solid-metal probes are observed and have been shown to be attributed to mercury diffusion into the dielectric porosities

  18. Time-dependent dielectric breakdown measurements of porous organosilicate glass using mercury and solid metal probes

    Energy Technology Data Exchange (ETDEWEB)

    Pei, Dongfei; Nichols, Michael T.; Shohet, J. Leon, E-mail: shohet@engr.wisc.edu [Plasma Processing and Technology Laboratory, Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); King, Sean W.; Clarke, James S. [Intel Corporation, Hillsboro, Oregon 97124 (United States); Nishi, Yoshio [Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States)

    2014-09-01

    Time-dependent dielectric breakdown (TDDB) is one of the major concerns for low-k dielectric materials. During plasma processing, low-k dielectrics are subjected to vacuum ultraviolet photon radiation and charged-particle bombardment. To examine the change of TDDB properties, time-to-breakdown measurements are made to porous SiCOH before and after plasma exposure. Significant discrepancies between mercury and solid-metal probes are observed and have been shown to be attributed to mercury diffusion into the dielectric porosities.

  19. Silicone elastomers with high dielectric permittivity and high dielectric breakdown strength based on tunable functionalized copolymers

    DEFF Research Database (Denmark)

    Madsen, Frederikke Bahrt; Yu, Liyun; Daugaard, Anders Egede

    2015-01-01

    system, with respect to functionalization, is achieved. It is investigated how the different functionalization variables affect essential DE properties, including dielectric permittivity, dielectric loss, elastic modulus and dielectric breakdown strength, and the optimal degree of chemical......%) was obtained without compromising other vital DE properties such as elastic modulus, gel fraction, dielectric and viscous loss and electrical breakdown strength....

  20. Investigation of 6T SRAM memory circuit using high-k dielectrics based nano scale junctionless transistor

    Science.gov (United States)

    Charles Pravin, J.; Nirmal, D.; Prajoon, P.; Mohan Kumar, N.; Ajayan, J.

    2017-04-01

    In this paper the Dual Metal Surround Gate Junctionless Transistor (DMSGJLT) has been implemented with various high-k dielectric. The leakage current in the device is analysed in detail by obtaining the band structure for different high-k dielectric material. It is noticed that with increasing dielectric constant the device provides more resistance for the direct tunnelling of electron in off state. The gate oxide capacitance also shows 0.1 μF improvement with Hafnium Oxide (HfO2) than Silicon Oxide (SiO2). This paved the way for a better memory application when high-k dielectric is used. The Six Transistor (6T) Static Random Access Memory (SRAM) circuit implemented shows 41.4% improvement in read noise margin for HfO2 than SiO2. It also shows 37.49% improvement in write noise margin and 30.16% improvement in hold noise margin for HfO2 than SiO2.

  1. Optics of dielectric microstructures

    DEFF Research Database (Denmark)

    Søndergaard, Thomas

    2002-01-01

    From the work carried out within the ph.d. project two topics have been selected for this thesis, namely emission of radiation by sources in dielectric microstructures, and planar photonic crystal waveguides. The work done within the first topic, emission of radiation by sources in dielectric...... microstructures, will be presented in the part I of this thesis consisting of the chapters 2-5. An introductions is given in chapter 2. In part I three methods are presented for calculating spontaneous and classical emission from sources in dielectric microstructures. The first method presented in chapter 3...... is based on the Fermi Golden Rule, and spontaneous emission from emitters in a passive dielectric microstructure is calculated by summing over the emission into each electromagnetic mode of the radiation field. This method is applied to investigate spontaneous emission in a two-dimensional photonic crystal...

  2. Novel low-kVp beamlet system for choroidal melanoma

    International Nuclear Information System (INIS)

    Esquivel, Carlos Jr; Fuller, Clifton D; Waggener, Robert G; Wong, Adrian; Meltz, Martin; Blough, Melissa; Eng, Tony Y; Thomas, Charles R Jr

    2006-01-01

    Treatment of choroidal melanoma with radiation often involves placement of customized brachytherapy eye-plaques. However, the dosimetric properties inherent in source-based radiotherapy preclude facile dose optimization to critical ocular structures. Consequently, we have constructed a novel system for utilizing small beam low-energy radiation delivery, the Beamlet Low-kVp X-ray, or 'BLOKX' system. This technique relies on an isocentric rotational approach to deliver dose to target volumes within the eye, while potentially sparing normal structures. Monte Carlo N-Particle (MCNP) transport code version 5.0(14) was used to simulate photon interaction with normal and tumor tissues within modeled right eye phantoms. Five modeled dome-shaped tumors with a diameter and apical height of 8 mm and 6 mm, respectively, were simulated distinct positions with respect to the macula iteratively. A single fixed 9 × 9 mm 2 beamlet, and a comparison COMS protocol plaque containing eight I-125 seeds (apparent activity of 8 mCi) placed on the scleral surface of the eye adjacent to the tumor, were utilized to determine dosimetric parameters at tumor and adjacent tissues. After MCNP simulation, comparison of dose distribution at each of the 5 tumor positions for each modality (BLOKX vs. eye-plaque) was performed. Tumor-base doses ranged from 87.1–102.8 Gy for the BLOKX procedure, and from 335.3–338.6 Gy for the eye-plaque procedure. A reduction of dose of at least 69% to tumor base was noted when using the BLOKX. The BLOKX technique showed a significant reduction of dose, 89.8%, to the macula compared to the episcleral plaque. A minimum 71.0 % decrease in dose to the optic nerve occurred when the BLOKX was used. The BLOKX technique allows more favorable dose distribution in comparison to standard COMS brachytherapy, as simulated using a Monte Carlo iterative mathematical modeling. Future series to determine clinical utility of such an approach are warranted

  3. Dielectric nanoresonators for light manipulation

    Science.gov (United States)

    Yang, Zhong-Jian; Jiang, Ruibin; Zhuo, Xiaolu; Xie, Ya-Ming; Wang, Jianfang; Lin, Hai-Qing

    2017-07-01

    Nanostructures made of dielectric materials with high or moderate refractive indexes can support strong electric and magnetic resonances in the optical region. They can therefore function as nanoresonators. In addition to plasmonic metal nanostructures that have been widely investigated, dielectric nanoresonators provide a new type of building blocks for realizing powerful and versatile nanoscale light manipulation. In contrast to plasmonic metal nanostructures, nanoresonators made of appropriate dielectric materials are low-cost, earth-abundant and have very small or even negligible light energy losses. As a result, they will find potential applications in a number of photonic devices, especially those that require low energy losses. In this review, we describe the recent progress on the experimental and theoretical studies of dielectric nanoresonators. We start from the basic theory of the electromagnetic responses of dielectric nanoresonators and their fabrication methods. The optical properties of individual dielectric nanoresonators are then elaborated, followed by the coupling behaviors between dielectric nanoresonators, between dielectric nanoresonators and substrates, and between dielectric nanoresonators and plasmonic metal nanostructures. The applications of dielectric nanoresonators are further described. Finally, the challenges and opportunities in this field are discussed.

  4. Attaining 2D Black Phosphorus and Investigations into Floating-Electrode Dielectric Barrier Discharge Treatment of Solutions

    Science.gov (United States)

    Smith, Joshua Benjamin

    -ray diffraction, transmission electron microscopy, and Raman spectroscopy have confirmed successful growth of 2D black phosphorus from red phosphorus thin films for potential uses in 2D semiconductor applications. Additionally, this work discusses some of the chemistry occurring in solution as a result of nonthermal plasma treatment from a floating-electrode dielectric barrier discharge (FE-DBD) configuration. Nonthermal plasma generation allows for the treatment of heat sensitive materials. This has opened up the field to numerous clinical applications of nonthermal plasma treatment including sterilization and wound healing along with potentials in dentistry, dermatology, and even food industries. FE-DBD plasma treatment of water was found to provide a wide-range antimicrobial solution that remained active following 2 years of aging. This plasma-treated water was found to generate a number of ROS/RNS and the formation of these components was studied and verified with UV/Vis and ESR spectroscopy. Enhanced effects were observed when cell culture medium was plasma treated, suggesting the formation of additional reactive species from the plasma treatment of a variety of biomolecules. It is essential to understand these effects for a number of reasons. The possibility to generate a wide range of antimicrobial solutions from air, water, and basic biomolecules could provide a solution for those bacteria that have developed antibiotic resistances. Simultaneously, information into the reaction mechanisms of this FE-DBD plasma treatment can be investigated. All of the applications mentioned above involve complex networks of basic biomolecules, from skin tissue to bacteria cell walls. This work analyzes the effects of plasma treatment on several biomolecule solutions and simultaneously takes aim at understanding some of the potential mechanisms of plasma treatment. Studies were carried out using NMR and GC/MS. This information was used to investigate the possible targeted areas for FE

  5. Ta penetration into template-type porous low-k material during atomic layer deposition of TaN

    International Nuclear Information System (INIS)

    Furuya, Akira; Ohtsuka, Nobuyuki; Misawa, Kaori; Shimada, Miyoko; Ogawa, Shinichi

    2005-01-01

    Ta penetration into a planar template-type porous low-k film during atomic layer deposition of TaN has been investigated by evaluating relations between Ta penetration and number of deposition cycles, exposure time of Ta precursor per deposition cycle, substrate temperature, and porosity of the porous low-k. The precursors were pentakisdimethylaminotantalum [PDMAT:Ta(N(CH 3 ) 2 ) 5 ] and NH 3 . The porous low-k was a methylsiloxane (MSX) whose pore size in the maximum distribution and porosity of the porous low-k were 0-1.9 nm and 0%-47%. Depth profile of the Ta penetration was measured by transmission electron microscopy and energy dispersive x-ray spectroscopy. The amount of penetrated and the penetration depth depended on the porosity. It was found that the precursors penetrate into the MSX film dominantly by gas phase diffusion through pores connecting from the surface to the inside. Increased surface area of the MSX film due to the pores results in a depletion of precursor at the wafer edge, and that this depletion causes the penetration characteristics at the edge of wafer differ from those at the center of the wafer. Moreover, the thickness required for the pore sealing by additive liner deposition is discussed

  6. Discharge ignition near a dielectric

    NARCIS (Netherlands)

    Sobota, A.; Veldhuizen, van E.M.; Stoffels, W.W.

    2008-01-01

    Electrical breakdown in noble gas near a dielectric is an important issue in lighting industry. In order to investigate the influence of the dielectric on the ignition process, we perform measurements in argon, with pressure varying from 0.1 to 1 bar, using a pin–pin electrode geometry. Here, we

  7. Investigation on discharge characteristics of a coaxial dielectric barrier discharge reactor driven by AC and ns power sources

    Science.gov (United States)

    Qian, WANG; Feng, LIU; Chuanrun, MIAO; Bing, YAN; Zhi, FANG

    2018-03-01

    A coaxial dielectric barrier discharge (DBD) reactor with double layer dielectric barriers has been developed for exhaust gas treatment and excited either by AC power or nanosecond (ns) pulse to generate atmospheric pressure plasma. The comparative study on the discharge characteristics of the discharge uniformity, power deposition, energy efficiency, and operation temperature between AC and ns pulsed coaxial DBD is carried out in terms of optical and electrical characteristics and operation temperature for optimizing the coaxial DBD reactor performance. The voltages across the air gap and dielectric layer and the conduction and displacement currents are extracted from the applied voltages and measured currents of AC and ns pulsed coaxial DBDs for the calculation of the power depositions and energy efficiencies through an equivalent electrical model. The discharge uniformity and operating temperature of the coaxial DBD reactor are monitored and analyzed by optical images and infrared camera. A heat conduction model is used to calculate the temperature of the internal quartz tube. It is found that the ns pulsed coaxial DBD has a much higher instantaneous power deposition in plasma, a lower total power consumption, and a higher energy efficiency compared with that excited by AC power and is more homogeneous and stable. The temperature of the outside wall of the AC and ns pulse excited coaxial DBD reaches 158 °C and 64.3 °C after 900 s operation, respectively. The experimental results on the comparison of the discharge characteristics of coaxial DBDs excited by different powers are significant for understanding of the mechanism of DBDs, reducing energy loss, and optimizing the performance of coaxial DBD in industrial applications.

  8. An EELS sub-nanometer investigation of the dielectric gate stack for the realization of InGaAs based MOSFET devices

    International Nuclear Information System (INIS)

    Longo, P; Paterson, G W; Craven, A J; Holland, M C; Thayne, I G

    2010-01-01

    In this paper, a subnanometer investigation of the Ga 2 O 3 /GdGaO dielectric gate stack deposited onto InGaAs is presented. Results regarding the influence of the growth conditions on the interface region from a chemical and morphological point of view are presented. The chemical information reported in this paper has been obtained using electron energy loss spectroscopy (EELS) that was carried out in a scanning transmission electron microscope ((S)TEM) showing both spatial and depth resolution.

  9. Investigations of Magnetic Structural Phase Transition of Layered Systems by Moessbauer Effect and by Dielectric Constant Measurements

    International Nuclear Information System (INIS)

    Mulhem, J.; Mostafa, M.; Shaban, H.

    2002-01-01

    Moessbauer Effect (ME) of compounds like (C n H 2 N +1 NH 3 ) 2 -Fe(Π)CL 4 and (CH 2 ) 6 (NH 3 ) 2 Fe(Π)CL 4 have been measured. The results indicate a conted spin antiferromagnet, with transition temperatures and magnetic field strengths according to value of n. Dielectric constant measurements of the above compounds as afunction of temperatures at different selected frequencies also have been carried out. The results confirm existence of structural phase transition shown by Me. (Author's) 10 refs., 6 figs., 1 tab

  10. Multispectral Detection with Metal-Dielectric Filters: An Investigation in Several Wavelength Bands with Temporal Coupled-Mode Theory

    Science.gov (United States)

    Lesmanne, Emeline; Espiau de Lamaestre, Roch; Boutami, Salim; Durantin, Cédric; Dussopt, Laurent; Badano, Giacomo

    2016-09-01

    Multispectral infrared (IR) detection is of great interest to enhance our ability to gather information from a scene. Filtering is a low-cost alternative to the complex multispectral device architectures to which the IR community has devoted much attention. Multilayer dielectric filters are standard in industry, but they require changing the thickness of at least one layer to tune the wavelength. Here, we pursue an approach based on apertures in a metallic layer of fixed thickness, in which the filtered wavelengths are selected by varying the aperture geometry. In particular, we study filters made of at least one sheet of resonating apertures in metal embedded in dielectrics. We will discuss two interesting problems that arise when one attempts to design such filters. First, metallic absorption must be taken into account. Second, the form and size of the pattern is limited by lithography. We will present some design examples and an attempt at explaining the filtering behavior based on the temporal coupled mode theory. That theory models the filter as a resonator interacting with the environment via loss channels. The transmission is solely determined by the loss rates associated with those channels. This model allows us to give a general picture of the filtering performance and compare their characteristics at different wavelength bands.

  11. Comparative investigation of novel hetero gate dielectric and drain engineered charge plasma TFET for improved DC and RF performance

    Science.gov (United States)

    Yadav, Dharmendra Singh; Verma, Abhishek; Sharma, Dheeraj; Tirkey, Sukeshni; Raad, Bhagwan Ram

    2017-11-01

    Tunnel-field-effect-transistor (TFET) has emerged as one of the most prominent devices to replace conventional MOSFET due to its ability to provide sub-threshold slope below 60 mV/decade (SS ≤ 60 mV/decade) and low leakage current. Despite this, TFETs suffer from ambipolar behavior, lower ON-state current, and poor RF performance. To address these issues, we have introduced drain and gate work function engineering with hetero gate dielectric for the first time in charge plasma based doping-less TFET (DL TFET). In this, the usage of dual work functionality over the drain region significantly reduces the ambipolar behavior of the device by varying the energy barrier at drain/channel interface. Whereas, the presence of dual work function at the gate terminal increases the ON-state current (ION). The combined effect of dual work function at the gate and drain electrode results in the increment of ON-state current (ION) and decrement of ambipolar conduction (Iambi) respectively. Furthermore, the incorporation of hetero gate dielectric along with dual work functionality at the drain and gate electrode provides an overall improvement in the performance of the device in terms of reduction in ambipolarity, threshold voltage and sub-threshold slope along with improved ON-state current and high frequency figures of merit.

  12. Mechanical characterization of zeolite low dielectric constant thin films by nanoindentation

    International Nuclear Information System (INIS)

    Johnson, Mark; Li Zijian; Wang Junlan; Ya, Yushan

    2007-01-01

    With semiconductor technologies continuously pushing the miniaturization limits, there is a growing interest in developing novel low dielectric constant materials to replace the traditional dense SiO 2 insulators. In order to survive the multi-level integration process and provide reliable material and structure for the desired integrated circuits (IC) functions, the new low-k materials have to be mechanically strong and stable. Therefore the material selection and mechanical characterization are vital for the successful development of next generation low-k dielectrics. A new class of low-k materials, nanoporous pure-silica zeolite, is prepared in thin films using IC compatible spin coating process and characterized using depth sensing nanoindentation technique. The elastic modulus of the zeolite thin films is found to be significantly higher than that of other low-k materials with similar porosity and dielectric constants. Correlations between the mechanical, microstructural and electrical properties of the thin films are discussed in detail

  13. Cellulose Triacetate Dielectric Films For Capacitors

    Science.gov (United States)

    Yen, Shiao-Ping S.; Jow, T. Richard

    1994-01-01

    Cellulose triacetate investigated for use as dielectric material in high-energy-density capacitors for pulsed-electrical-power systems. Films of cellulose triacetate metalized on one or both sides for use as substrates for electrodes and/or as dielectrics between electrodes in capacitors. Used without metalization as simple dielectric films. Advantages include high breakdown strength and self-healing capability.

  14. Combinatorial process optimization for negative photo-imageable spin-on dielectrics and investigation of post-apply bake and post-exposure bake interactions

    Science.gov (United States)

    Kim, Jihoon; Zhang, Ruzhi M.; Wolfer, Elizabeth; Patel, Bharatkumar K.; Toukhy, Medhat; Bogusz, Zachary; Nagahara, Tatsuro

    2012-03-01

    Patternable dielectric materials were developed and introduced to reduce semiconductor manufacturing complexity and cost of ownership (CoO). However, the bestowed dual functionalities of photo-imageable spin-on dielectrics (PSOD) put great challenges on the material design and development. In this work, we investigated the combinatorial process optimization for the negative-tone PSOD lithography by employing the Temperature Gradient Plate (TGP) technique which significantly reduced the numbers of wafers processed and minimized the developmental time. We demonstrated that this TGP combinatorial is very efficient at evaluating the effects and interactions of several independent variables such as post-apply bake (PAB) and post-exposure bake (PEB). Unlike most of the conventional photoresists, PAB turned out to have a great effect on the PSOD pattern profiles. Based on our extensive investigation, we observed great correlation between PAB and PEB processes. In this paper, we will discuss the variation of pattern profiles as a matrix of PAB and PEB and propose two possible cross-linking mechanisms for the PSOD materials to explain the unusual experimental results.

  15. On dielectric breakdown statistics

    International Nuclear Information System (INIS)

    Tuncer, Enis; James, D Randy; Sauers, Isidor; Ellis, Alvin R; Pace, Marshall O

    2006-01-01

    In this paper, we investigate the dielectric breakdown data of some insulating materials and focus on the applicability of the two- and three-parameter Weibull distributions. A new distribution function is also proposed. In order to assess the model distribution's trustworthiness, we employ the Monte Carlo technique and, randomly selecting data-subsets from the whole dielectric breakdown data, determine whether the selected probability functions accurately describe the breakdown data. The utility and strength of the proposed expression are illustrated distinctly by the numerical procedure. The proposed expression is shown to be a valuable alternative to the Weibull ones

  16. Investigation on structural, surface morphological and dielectric properties of Zn-doped SnO{sub 2} nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Sagadevan, Suresh [Department of Physics, AMET University, Chennai (India); Podder, Jiban, E-mail: sureshsagadevan@gmail.com [Department of Chemical and Biological Engineering, University of Saskatchewan (Canada)

    2016-03-15

    Zinc doped Tin oxide (SnO{sub 2}) nanoparticles were prepared by co-precipitation method. The average crystallite size of pure and Zn-doped SnO{sub 2} nanoparticles was calculated from the X-ray diffraction (XRD) pattern. The FT-IR spectrum indicated the strong presence of SnO{sub 2} nanoparticles. The morphology and the particle size were studied using the scanning electron microscope (SEM) and transmission electron microscope (TEM). The particle size of the Zn-doped SnO{sub 2} nanoparticles was also analyzed, using the Dynamic Light Scattering (DLS) experiment. The optical properties were studied by the UV-Visible absorption spectrum. The dielectric properties of Zn-doped SnO{sub 2} nanoparticles were studied at different frequencies and temperatures. The ac conductivity of Zn-doped SnO{sub 2} nanoparticles was also studied. (author)

  17. Micro-Raman scattering and dielectric investigations of phase transitions behavior in the PbHf0.7Sn0.3O3 single crystal

    Science.gov (United States)

    Jankowska-Sumara, Irena; Ko, Jae-Hyeon; Podgórna, Maria; Oh, Soo Han; Majchrowski, Andrzej

    2017-09-01

    Raman light scattering was used to detect the sequence of transitions in a PbHf1-xSnxO3 (PHS) single crystal with x = 0.30 in a temperature range of 77-873 K. Changes of Raman spectra were observed in the vicinity of structural phase transitions: between the antiferroelectric (AFE1)-antiferroelectric (AFE2)—intermediate—paraelectric phases. Light scattering and dielectric investigations were used to find out the nature and sequence of the phase transition, as well as the large dielectric permittivity values measured at the phase transition, by searching for the soft-phonon-mode behavior. The experimentally recorded spectra were analyzed in terms of the damped-harmonic oscillator model for the phonon bands. It is demonstrated that the structural phase transformations in PHS can be considered as the result of softening of many modes, not only the ferroelectric one. It was also proved that locally broken symmetry effects are present at temperatures far above the Curie temperature and are connected with the softening of two optic modes of different nature.

  18. Hierarchical viscosity of aqueous solution of tilapia scale collagen investigated via dielectric spectroscopy between 500 MHz and 2.5 THz

    Science.gov (United States)

    Kawamata, H.; Kuwaki, S.; Mishina, T.; Ikoma, T.; Tanaka, J.; Nozaki, R.

    2017-03-01

    Aqueous solutions of biomolecules such as proteins are very important model systems for understanding the functions of biomolecules in actual life processes because interactions between biomolecules and the surrounding water molecules are considered to be important determinants of biomolecules’ functions. Globule proteins have been extensively studied via dielectric spectroscopy; the results indicate three relaxation processes originating from fluctuations in the protein molecule, the bound water and the bulk water. However, the characteristics of aqueous solutions of collagens have rarely been investigated. In this work, based on broadband dielectric measurements between 500 MHz and 2.5 THz, we demonstrate that the high viscosity of a collagen aqueous solution is due to the network structure being constructed of rod-like collagen molecules surrounding free water molecules and that the water molecules are not responsible for the viscosity. We determine that the macroscopic viscosity is related to the mean lifetime of the collagen-collagen interactions supporting the networks and that the local viscosity of the water surrounded by the networks is governed by the viscosity of free water as in the bulk. This hierarchical structure in the dynamics of the aqueous solution of biomolecules has been revealed for the first time.

  19. Investigation of the correlation between dielectric function, thickness and morphology of nano-granular ZnO very thin films

    Energy Technology Data Exchange (ETDEWEB)

    Gilliot, Mickaël, E-mail: mickael.gilliot@univ-reims.fr [Laboratoire d' Ingénierie et Sciences des Matériaux, Université de Reims Champagne-Ardenne (France); Hadjadj, Aomar [Laboratoire d' Ingénierie et Sciences des Matériaux, Université de Reims Champagne-Ardenne (France); Martin, Jérôme [Laboratoire de Nanotechnologie et d' Instrumentation Optique, Université de Technologie de Troyes (France)

    2015-12-31

    Thin nano-granular ZnO layers were prepared using a sol–gel synthesis and spin-coating deposition process with a thickness ranging between 20 and 120 nm. The complex dielectric function (ϵ) of the ZnO film was determined from spectroscopic ellipsometry measurements. Up to a critical thickness close to 60 nm, the magnitude of both the real and the imaginary parts of ϵ rapidly increases and then slowly tends to values closer to the bulk ZnO material. This trend suggests a drastic change in the film porosity at both sides of this critical thickness, due to the pre-heating and post-crystallization processes, as confirmed by additional characterization of the structure and the morphology of the ZnO films. - Highlights: • c-Axis oriented ZnO thin films were grown with different morphological states. • The morphology and structures are controlled by controlling the thickness. • The optical properties are correlated to morphological evolution. • Two growth behaviors and property evolutions are identified around a critical thickness.

  20. Experimental and Simulation Investigation of Tri-Sector Cylindrical Dielectric Resonator Antenna in composite forms for Wireless Applications

    Science.gov (United States)

    Ranjan, Pinku; Gangwar, Ravi Kumar

    2016-11-01

    In this article, a tri-sector cylindrical dielectric resonator antenna (t-CDRA) has been introduced by splitting CDRA into three uniform sectors and all three uniform sectors are packed together in a compact way on a metallic ground plane. A coaxial probe feed is used to excite the proposed composite t-CDRA at the center position. Multi-segmentation approach has been applied for further improvement in bandwidth of proposed t-CDRA. The proposed composite t-CDRA has been designed using HFSS simulation software and analyzed using theoretical analysis. The prototype of t-CDRA, three elements t-CDRA and three elements dual segment t-CDRA has been fabricated for measurement. The input characteristics, near field, far field distribution of the proposed t-CDRAs have been studied through HFSS simulation software and their results are compared with corresponding experimental results. Proposed segmented t-CDRA has wide impedance bandwidth (|S11|≤-10 dB) of 85 % with monopole-like radiation pattern. The peak gain of segmented t-CDRA has 5.1 dBi with 98.5 % radiation efficiency. The proposed segmented t-CDRA may find suitable applications in 5.0 GHz WLAN and WiMAX band.

  1. Electrical breakdown phenomena of dielectric elastomers

    DEFF Research Database (Denmark)

    Mateiu, Ramona Valentina; Yu, Liyun; Skov, Anne Ladegaard

    2017-01-01

    Silicone elastomers have been heavily investigated as candidates for dielectric elastomers and are as such almost ideal candidates with their inherent softness and compliance but they suffer from low dielectric permittivity. This shortcoming has been sought optimized by many means during recent...... years. However, optimization with respect to the dielectric permittivity solely may lead to other problematic phenomena such as premature electrical breakdown. In this work, we investigate the electrical breakdown phenomena of various types of permittivity-enhanced silicone elastomers. Two types...... of silicone elastomers are investigated and different types of breakdown are discussed. Furthermore the use of voltage stabilizers in silicone-based dielectric elastomers is investigated and discussed....

  2. Extrinsic and intrinsic contributions for dielectric behavior of La{sub 2}NiMnO{sub 6} ceramic

    Energy Technology Data Exchange (ETDEWEB)

    Cao, Zhenzhu, E-mail: czz03@163.com [Chemical Engineering College of Inner Mongolia University of Technology, Hohhot 010051 (China); Liu, Xiaoting; He, Weiyan [Chemical Engineering College of Inner Mongolia University of Technology, Hohhot 010051 (China); Ruan, Xuezheng [Key Laboratory of Inorganic Function Material and Device, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Gao, Yanfang; Liu, Jinrong [Chemical Engineering College of Inner Mongolia University of Technology, Hohhot 010051 (China)

    2015-11-15

    The influences of electrode material, DC bias and temperature on the electrical and dielectric properties of LNMO ceramic have been investigated using impedance spectroscopy and dielectric measurements. Evidences from dielectric and impedance analysis showed that the giant dielectric constant and its notable tunability originated from extrinsic contribution from interface polarization. Low temperature and high frequency dielectric characterization revealed the low intrinsic dielectric constant.

  3. Investigation on the influence of electrode geometry on characteristics of coaxial dielectric barrier discharge reactor driven by an oscillating microsecond pulsed power supply

    Science.gov (United States)

    Miao, Chuanrun; Liu, Feng; Wang, Qian; Cai, Meiling; Fang, Zhi

    2018-03-01

    In this paper, an oscillating microsecond pulsed power supply with rise time of several tens of nanosecond (ns) is used to excite a coaxial DBD with double layer dielectric barriers. The effects of various electrode geometries by changing the size of inner quartz tube (different electrode gaps) on the discharge uniformity, power deposition, energy efficiency, and operation temperature are investigated by electrical, optical, and temperature diagnostics. The electrical parameters of the coaxial DBD are obtained from the measured applied voltage and current using an equivalent electrical model. The energy efficiency and the power deposition in air gap of coaxial DBD with various electrode geometries are also obtained with the obtained electrical parameters, and the heat loss and operation temperature are analyzed by a heat conduction model. It is found that at the same applied voltage, with the increasing of the air gap, the discharge uniformity becomes worse and the discharge power deposition and the energy efficiency decrease. At 2.5 mm air gap and 24 kV applied voltage, the energy efficiency of the coaxial DBD reaches the maximum value of 68.4%, and the power deposition in air gap is 23.6 W and the discharge uniformity is the best at this case. The corresponding operation temperature of the coaxial DBD reaches 64.3 °C after 900 s operation and the temperature of the inner dielectric barrier is 114.4 °C under thermal balance. The experimental results provide important experimental references and are important to optimize the design and the performance of coaxial DBD reactor.

  4. Investigations on MgO-dielectric GaN/AlGaN/GaN MOS-HEMTs by using an ultrasonic spray pyrolysis deposition technique

    International Nuclear Information System (INIS)

    Lee, Ching-Sung; Liu, Han-Yin; Wu, Ting-Ting; Hsu, Wei-Chou; Sun, Wen-Ching; Wei, Sung-Yen; Yu, Sheng-Min

    2016-01-01

    This work investigates GaN/Al 0.24 Ga 0.76 N/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) grown on a Si substrate with MgO gate dielectric by using the non-vacuum ultrasonic spray pyrolysis deposition (USPD) technique. The oxide layer thickness is tuned to be 30 nm with the dielectric constant of 8.8. Electron spectroscopy for chemical analysis (ESCA), secondary ion mass spectrometry (SIMS), atomic force microscopy (AFM), transmission electron microscopy (TEM), C–V, low-frequency noise spectra, and pulsed I–V measurements are performed to characterize the interface and oxide quality for the MOS-gate structure. Improved device performances have been successfully achieved for the present MOS-HEMT (Schottky-gate HEMT) design, consisting of a maximum drain-source current density (I DS, max ) of 681 (500) mA/mm at V GS  = 4 (2) V, I DS at V GS  = 0 V (I DSS0 ) of 329 (289) mA/mm, gate-voltage swing (GVS) of 2.2 (1.6) V, two-terminal gate-drain breakdown voltage (BV GD ) of −123 (−104) V, turn-on voltage (V on ) of 1.7 (0.8) V, three-terminal off-state drain-source breakdown voltage (BV DS ) of 119 (96) V, and on/off current ratio (I on /I off ) of 2.5 × 10 8 (1.2 × 10 3 ) at 300 K. Improved high-frequency and power performances are also achieved in the present MOS-HEMT design. (paper)

  5. Eeonomer 200F®: A High-Performance Nanofiller for Polymer Reinforcement—Investigation of the Structure, Morphology and Dielectric Properties of Polyvinyl Alcohol/Eeonomer-200F® Nanocomposites for Embedded Capacitor Applications

    Science.gov (United States)

    Deshmukh, Kalim; Ahamed, M. Basheer; Deshmukh, Rajendra R.; Sadasivuni, Kishor Kumar; Ponnamma, Deepalekshmi; Pasha, S. K. Khadheer; AlMaadeed, Mariam Al-Ali; Polu, Anji Reddy; Chidambaram, K.

    2017-04-01

    In the present study, Eeonomer 200F® was used as a high-performance nanofiller to prepare polyvinyl alcohol (PVA)-based nanocomposite films using a simple and eco-friendly solution casting technique. The prepared PVA/Eeonomer nanocomposite films were further investigated using various techniques including Fourier transform infrared spectroscopy, x-ray diffraction, thermogravimetric analysis, polarized optical microscopy, scanning electron microscopy and mechanical testing. The dielectric behavior of the nanocomposites was examined over a broad frequency range from 50 Hz to 20 MHz and temperatures ranging from 40°C to 150°C. A notable improvement in the thermal stability of the PVA was observed with the incorporation of Eeonomer. The nanocomposites also demonstrated improved mechanical properties due to the fine dispersion of the Eeonomer, and good compatibility and strong interaction between the Eeonomer and the PVA matrix. A significant improvement was observed in the dielectric properties of the PVA upon the addition of Eeonomer. The nanocomposites containing 5 wt.% Eeonomer exhibited a dielectric constant of about 222.65 (50 Hz, 150°C), which was 18 times that of the dielectric constant (12.33) of neat PVA film under the same experimental conditions. These results thus indicate that PVA/Eeonomer nanocomposites can be used as a flexible high-k dielectric material for embedded capacitor applications.

  6. Dielectric Wakefield Researches

    International Nuclear Information System (INIS)

    Kiselev, V.A.; Linnik, A.F.; Onishchenko, N.I.; Uskov, V.V.; Marshall, T.C.

    2006-01-01

    Excitation of wakefield in cylindrical dielectric waveguide/resonator by a sequence of relativistic electron bunches was investigated using an electron linac 'Almaz-2' (4.5 MeV, 6·10 3 bunches of duration 60 ps and charge 0.32 nC each). Energy spectrum of electrons, radial topography and longitudinal distribution of wakefield, and total energy of excited wakefield were measured by means of magnetic analyzer, high frequency probe, and a sensitive calorimeter

  7. Adhesion study of low-k/Si system using 4-point bending and nanoscratch test

    International Nuclear Information System (INIS)

    Damayanti, M.; Widodo, J.; Sritharan, T.; Mhaisalkar, S.G.; Lu, W.; Gan, Z.H.; Zeng, K.Y.; Hsia, L.C.

    2005-01-01

    Chemical vapour deposited (CVD) low-k films using tri-methyl-silane (3MS) and tetra-methyl cyclo-tetra-siloxanes (TMCTS) precursors were studied. A 4-point bend test (4PBT) was performed to assess the adhesion property of the low-k films to Si substrates and the results were compared with that of simpler method, nanoscratch test (NST), as a quality control tool despite its drawbacks. Adhesion energy, G c , of the low-k/Si interface as measured by 4PBT and critical scratch load, P c , as obtained by NST display a linear relationship with hardness and modulus of the low-k film. The lowering of G c as the hardness of the film decreases can be explained by the effects of the C introduction into the Si-O networks found in these films. Lower carbon content for higher hardness films is thought to cause them to be more 'silica-like', and thus, exhibit better adhesion with the Si substrate. Two failure modes were observed for specimens under 4PBT. On one hand, films with low hardness ( c ( 2 ) with an adhesive separation of low-k from the Si substrate. On the other hand, films of high hardness (>5 GPa) display interfacial energies in excess of 10 J/m 2 with delamination of epoxy from the Si substrate, thus, indicating excellent adhesion between the low-k films and Si substrate. For the low hardness films, good correlation exists between P c and G c . However, the two data points of the high hardness films that gave the two highest P c and G c values do not lie on the correlation line drawn for the low hardness film data points due to different factors governing the failure in both tests and a change in the 4PBT failure mechanism

  8. Investigation of structural, magnetic and dielectric properties of Cr3+ substituted Cu0.75Co0.25Fe2-xO4 ferrite nanoparticles

    Science.gov (United States)

    Reddi, M. Sushma; Ramesh, M.; Sreenivasu, T.; Rao, G. S. N.; Samatha, K.

    2018-05-01

    Chromium doped Copper-Cobalt ferrite Nanoparticles were obtained by sol-gel auto-combustion method using citric acid as a fuel. The metal nitrates to citric acid ratio was taken as 1:1. The prepared powder of Cr3+ doped copper-cobalt ferrite nanoparticles is annealed at 600°C for 5 hrs and the same powder was used for characterization and investigations of structural properties. The phase composition, micro-structural, micro morphological and elemental analysis studies were carried out by X-ray diffraction (XRD), scanning electron microscope (SEM) technique and energy dispersive spectroscopy (EDS). The FTIR spectra of these samples are recorded to ensure the presence of the metallic compounds. The average crystallite size obtained by Scherrer's formula is of the order of 19.28 nm to 32.92 nm. The dielectric properties are investigated as a function of frequency at room temperature using LCR-Q meter. The saturation magnetization (Ms) of the Cr3+ substituted Cu-Co ferrite sintered at 1100°C lies in the range of 5.4136-28.9943 emu/g, the coercivity (Hc) dropped desperately from about 2091.3-778.53Oe as Cr3+ composition increases from 0.0 to 0.25.

  9. Are aortic endograft prostheses fully hemo-compatible? A dielectric spectroscopy investigation of the electrical alterations induced on erythrocyte cell membranes

    International Nuclear Information System (INIS)

    Basoli, Antonio; Bordi, Federico; Cametti, Cesare; Faraglia, Vittorio; Gili, Tommaso; Rizzo, Luigi; Taurino, Maurizio

    2007-01-01

    In this paper we present a new approach directed to ascertain the full hemo-compatibility of aortic endograft prostheses based on the measurement of the passive electrical parameters of the erythrocyte cell membrane. The red blood cell membrane, from an electric point of view, is characterized by an electrical permittivity, ε s , which takes into account the structural charged organization of the lipid double layer, and by the electrical conductivity, σ s , which accounts for the ionic transport processes across the membrane. These parameters can be easily measured by means of a radiowave dielectric spectroscopy technique, analyzing the dependence of the electrical impedance of an erythrocyte suspension on the frequency of the applied electric field. In this preliminary report, we investigate the alterations induced, at a membrane level, by two different devices commonly employed for endovascular abdominal aortic aneurysm exclusion, i.e., Excluder (registered) and Zenith (registered) devices, implanted in ten patients. We observe, in all the cases investigated, a statistically significant increase of both the permittivity ε s and electrical conductivity σ s of the erythrocyte membrane upon the prosthesis implant, this increase being higher than about 20% of the un-treated values. Moreover, these alterations remain roughly unaffected 30 days after surgery. These findings suggest that a complete hemo-compatibility of these prostheses is lacking, even if the observed alterations may not have a clinical relevance

  10. Are aortic endograft prostheses fully hemo-compatible? A dielectric spectroscopy investigation of the electrical alterations induced on erythrocyte cell membranes

    Energy Technology Data Exchange (ETDEWEB)

    Basoli, Antonio [Clinica Chirurgica II, Universita di Roma ' La Sapienza' , Rome (Italy); Bordi, Federico [Dipartimento di Fisica, Universita di Roma ' La Sapienza' , Rome (Italy); Cametti, Cesare [Dipartimento di Fisica, Universita di Roma ' La Sapienza' , Rome (Italy); Faraglia, Vittorio [Cattedra di Chirurgia Vascolare, Second School of Medicine, Universita di Roma ' La Sapienza' , Rome (Italy); Gili, Tommaso [Dipartimento di Fisica, Universita di Roma ' La Sapienza' , Rome (Italy); Rizzo, Luigi [Cattedra di Chirurgia Vascolare, Second School of Medicine, Universita di Roma ' La Sapienza' , Rome (Italy); Taurino, Maurizio [Cattedra di Chirurgia Vascolare, Second School of Medicine, Universita di Roma ' La Sapienza' , Rome (Italy)

    2007-03-01

    In this paper we present a new approach directed to ascertain the full hemo-compatibility of aortic endograft prostheses based on the measurement of the passive electrical parameters of the erythrocyte cell membrane. The red blood cell membrane, from an electric point of view, is characterized by an electrical permittivity, {epsilon}{sub s}, which takes into account the structural charged organization of the lipid double layer, and by the electrical conductivity, {sigma}{sub s}, which accounts for the ionic transport processes across the membrane. These parameters can be easily measured by means of a radiowave dielectric spectroscopy technique, analyzing the dependence of the electrical impedance of an erythrocyte suspension on the frequency of the applied electric field. In this preliminary report, we investigate the alterations induced, at a membrane level, by two different devices commonly employed for endovascular abdominal aortic aneurysm exclusion, i.e., Excluder (registered) and Zenith (registered) devices, implanted in ten patients. We observe, in all the cases investigated, a statistically significant increase of both the permittivity {epsilon}{sub s} and electrical conductivity {sigma}{sub s} of the erythrocyte membrane upon the prosthesis implant, this increase being higher than about 20% of the un-treated values. Moreover, these alterations remain roughly unaffected 30 days after surgery. These findings suggest that a complete hemo-compatibility of these prostheses is lacking, even if the observed alterations may not have a clinical relevance.

  11. Etching Enhancement Followed by Nitridation on Low-k SiOCH Film in Ar/C5F10O Plasma

    Science.gov (United States)

    Miyawaki, Yudai; Shibata, Emi; Kondo, Yusuke; Takeda, Keigo; Kondo, Hiroki; Ishikawa, Kenji; Okamoto, Hidekazu; Sekine, Makoto; Hori, Masaru

    2013-02-01

    The etching rates of low-dielectric-constant (low-k), porous SiOCH (p-SiOCH) films were increased by nitrogen-added Ar/C5F10O plasma etching in dual-frequency (60 MHz/2 MHz)-excited parallel plate capacitively coupled plasma. Previously, perfluoropropyl vinyl ether [C5F10O] provided a very high density of CF3+ ions [Nagai et al.: Jpn. J. Appl. Phys. 45 (2006) 7100]. Surface nitridation on the p-SiOCH surface exposed to Ar/N2 plasma led to the etching of larger amounts of p-SiOCH in Ar/C5F10O plasma, which depended on the formation of bonds such as =C(sp2)=N(sp2)- and -C(sp)≡N(sp).

  12. Numerical investigation on the dynamics and evolution mechanisms of multiple-current-pulse behavior in homogeneous helium dielectric-barrier discharges at atmospheric pressure

    Directory of Open Access Journals (Sweden)

    Yuhui Zhang

    2018-03-01

    Full Text Available A systematic investigation on the dynamics and evolution mechanisms of multiple-current-pulse (MCP behavior in homogeneous dielectric barrier discharge (HDBD is carried out via fluid modelling. Inspecting the simulation results, two typical discharge regimes, namely the MCP-Townsend regime and MCP-glow regime, are found prevailing in MCP discharges, each with distinctive electrical and dynamic properties. Moreover, the evolution of MCP behavior with external parameters altering are illustrated and explicitly discussed. It is revealed that the discharge undergoes some different stages as external parameters vary, and the discharge in each stage follows a series of distinctive pattern in morphological characteristics and evolution trends. Among those stages, the pulse number per half cycle is perceived to observe non-monotonic variations with applied voltage amplitude (Vam and gap width (dg increasing, and a merging effect among pulses, mainly induced by the enhanced contribution of sinusoidal component to the total current, is considered responsible for such phenomenon. The variation of incipient discharge peak phase (Φpm is dominated by the value of Vam as well as the proportion of total applied voltage that drops across the gas gap. Moreover, an abnormal, dramatic elevation in Jpm with dg increasing is observed, which could be evinced by the strengthened glow discharge structure and therefore enhanced space charge effect.

  13. Curing behavior and reaction kinetics of binder resins for 3D-printing investigated by dielectric analysis (DEA)

    Science.gov (United States)

    Möginger, B.; Kehret, L.; Hausnerova, B.; Steinhaus, J.

    2016-05-01

    3D-Printing is an efficient method in the field of additive manufacturing. In order to optimize the properties of manufactured parts it is essential to adapt the curing behavior of the resin systems with respect to the requirements. Thus, effects of resin composition, e.g. due to different additives such as thickener and curing agents, on the curing behavior have to be known. As the resin transfers from a liquid to a solid glass the time dependent ion viscosity was measured using DEA with flat IDEX sensors. This allows for a sensitive measurement of resin changes as the ion viscosity changes two to four decades. The investigated resin systems are based on the monomers styrene and HEMA. To account for the effects of copolymerization in the calculation of the reaction kinetics it was assumed that the reaction can be considered as a homo-polymerization having a reaction order n≠1. Then the measured ion viscosity curves are fitted with the solution of the reactions kinetics - the time dependent degree of conversion (DC-function) - for times exceeding the initiation phase representing the primary curing. The measured ion viscosity curves can nicely be fitted with the DC-function and the determined fit parameters distinguish distinctly between the investigated resin compositions.

  14. Dielectric properties of binary solutions a data handbook

    CERN Document Server

    Akhadov, Y Y

    1980-01-01

    Dielectric Properties of Binary Solutions focuses on the investigation of the dielectric properties of solutions, as well as the molecular interactions and mechanisms of molecular processes that occur in liquids. The book first discusses the fundamental formulas describing the dielectric properties of liquids and dielectric data for binary systems of non-aqueous solutions. Topics include permittivity and dielectric dispersion parameters of non-aqueous solutions of organic and inorganic compounds. The text also tackles dielectric data for binary systems of aqueous solutions, including permittiv

  15. Super dielectric capacitor using scaffold dielectric

    OpenAIRE

    Phillips, Jonathan

    2018-01-01

    Patent A capacitor having first and second electrodes and a scaffold dielectric. The scaffold dielectric comprises an insulating material with a plurality of longitudinal channels extending across the dielectric and filled with a liquid comprising cations and anions. The plurality of longitudinal channels are substantially parallel and the liquid within the longitudinal channels generally has an ionic strength of at least 0.1. Capacitance results from the migrations of...

  16. Valence and conduction band offsets at low-k a-SiO{sub x}C{sub y}:H/a-SiC{sub x}N{sub y}:H interfaces

    Energy Technology Data Exchange (ETDEWEB)

    King, Sean W., E-mail: sean.king@intel.com; Brockman, Justin; French, Marc; Jaehnig, Milt; Kuhn, Markus [Logic Technology Development, Intel Corporation, Hillsboro, Oregon 97124 (United States); French, Benjamin [Ocotillo Materials Laboratory, Intel Corporation, Chandler, Arizona 85248 (United States)

    2014-09-21

    In order to understand the fundamental electrical leakage and reliability failure mechanisms in nano-electronic low-k dielectric/metal interconnect structures, we have utilized x-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy to determine the valence and conduction band offsets present at interfaces between non-porous and porous low-k a-SiO{sub x}C{sub y}:H interlayer dielectrics and a-SiC{sub x}N{sub y}:H metal capping layers. The valence band offset for such interfaces was determined to be 2.7±0.2 eV and weakly dependent on the a-SiOC:H porosity. The corresponding conduction band offset was determined to be 2.1±0.2 eV. The large band offsets indicate that intra metal layer leakage is likely dominated by defects and trap states in the a-SiOC:H and a-SiCN:H dielectrics.

  17. Comparative study of Ta, TaN and Ta/TaN bi-layer barriers for Cu-ultra low-k porous polymer integration

    International Nuclear Information System (INIS)

    Yang, L.Y.; Zhang, D.H.; Li, C.Y.; Foo, P.D.

    2004-01-01

    Tantalum (Ta), TaN and bilayer Ta/TaN barriers deposited on ultra-low-k porous polymer (ULKPP) and the thermal stability of their structures are comparatively investigated using various techniques. The Ta/ultra-low-k polymer shows the smallest sheet resistance, but the poorest thermal stability, while TaN on the ultra-low-k polymer shows the highest resistance but the best thermal stability. The bi-layer Ta/TaN barrier takes the advantage of both Ta and TaN barriers and gives reasonable resistance and thermal stability. The electrical tests indicate that the Cu lines with the TaN and bi-layer Ta/TaN barriers exhibit the smaller leakage current and higher breakdown voltage compared with the Cu lines with the Ta barrier. The better thermal stability of the TaN and the bi-layer Ta/TaN barriers is mainly due to the amorphous/nanostructure and less grain boundaries of the barriers. In addition, the texture discontinuity at the Ta/TaN interfaces in the bi-layers barrier also plays an important role in reducing mutual diffusion of Ta atoms in the Ta barrier and some atoms in the ultra-low-k porous polymer

  18. Numerical investigation of the effect of driving voltage pulse shapes on the characteristics of low-pressure argon dielectric barrier discharge

    International Nuclear Information System (INIS)

    Eslami, E.; Barjasteh, A.; Morshedian, N.

    2015-01-01

    In this work, we numerically compare the effect of a sinusoidal, triangular, and rectangular pulsed voltage profile on the calculated particle production, electric current, and gas voltage in a dielectric barrier discharge. The total argon gas pressure of 400 Pa, the distance between dielectrics of 5 mm, the dielectric thickness of 0.7 mm, and the temperature of T = 300 K were considered as input parameters. The different driving voltage pulse shapes (triangular, rectangular, and sinusoidal) are considered as applied voltage with a frequency of 7 kHz and an amplitude of 700 V peak to peak. It is shown that applying a rectangular voltage, as compared with a sinusoidal or triangle voltage, increases the current peak, while the peak width is decreased. Higher current density is related to high production of charged particles, which leads to the generation of some highly active species, such as Ar* (4s level), and Ar** (4p level) in the gap

  19. Study of porogen removal by atomic hydrogen generated by hot wire chemical vapor deposition for the fabrication of advanced low-k thin films

    Energy Technology Data Exchange (ETDEWEB)

    Godavarthi, S., E-mail: srinivas@cinvestav.mx [Program of Nanoscience and Nanotechnology, Cinvestav-IPN (Mexico); Universidad Nacional Autonoma de Mexico, Instituto de Ciencias Fisicas, Av. Universidad, Cuernavaca, Morelos (Mexico); Wang, C.; Verdonck, P. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Matsumoto, Y.; Koudriavtsev, I. [Program of Nanoscience and Nanotechnology, Cinvestav-IPN (Mexico); SEES, Electrical Engineering Department, Cinvestav-IPN (Mexico); Dutt, A. [SEES, Electrical Engineering Department, Cinvestav-IPN (Mexico); Tielens, H.; Baklanov, M.R. [imec, Kapeldreef 75, 3001 Leuven (Belgium)

    2015-01-30

    In order to obtain low-k dielectric films, a subtractive technique, which removes sacrificial porogens from a hydrogenated silicon oxycarbide (SiOC:H) film, has been used successfully by different groups in the past. In this paper, we report on the porogen removal from porogenated SiOC:H films, using a hot wire chemical vapor deposition (HWCVD) equipment. Molecular hydrogen is dissociated into atomic hydrogen by the hot wires and these atoms may successfully remove the hydrocarbon groups from the porogenated SiOC:H films. The temperature of the HWCVD filaments proved to be a determining factor. By Fourier transform infrared spectroscopy, X-ray reflectivity (XRR), secondary ion mass spectrometry (SIMS), ellipsometric porosimetry and capacitance-voltage analyses, it was possible to determine that for temperatures higher than 1700 °C, efficient porogen removal occurred. For temperatures higher than 1800 °C, the presence of OH groups was detected. The dielectric constant was the lowest, 2.28, for the samples processed at a filament temperature of 1800 °C, although porosity measurements showed higher porosity for the films deposited at the higher temperatures. XRR and SIMS analyses indicated densification and Tungsten (W) incorporation at the top few nanometers of the films.

  20. Melatonin Is Involved in Regulation of Bermudagrass Growth and Development and Response to Low K+ Stress

    Directory of Open Access Journals (Sweden)

    Liang Chen

    2017-11-01

    Full Text Available Melatonin (N-acetyl-5-methoxytryptamine plays critical roles in plant growth and development and during the response to multiple abiotic stresses. However, the roles of melatonin in plant response to K+ deficiency remain largely unknown. In the present study, we observed that the endogenous melatonin contents in bermudagrass were remarkably increased by low K+ (LK treatment, suggesting that melatonin was involved in bermudagrass response to LK stress. Further phenotype analysis revealed that exogenous melatonin application conferred Bermudagrass enhanced tolerance to LK stress. Interestingly, exogenous melatonin application also promoted bermudagrass growth and development at normal condition. Furthermore, the K+ contents measurement revealed that melatonin-treated plants accumulated more K+ in both shoot (under both control and LK condition and root tissues (under LK condition compared with those of melatonin non-treated plants. Expression analysis indicated that the transcripts of K+ transport genes were significantly induced by exogenous melatonin treatment in bermudagrass under both control and LK stress conditions, especially under a combined treatment of LK stress and melatonin, which may increase accumulation of K+ content profoundly under LK stress and thereby contributed to the LK-tolerant phenotype. In addition, we investigated the role of melatonin in the regulation of photosystem II (PSII activities under LK stress. The chlorophyll fluorescence transient (OJIP curves were obviously higher in plants grown in LK with melatonin (LK+Mel than those of plants grown in LK medium without melatonin application for 1 or 2 weeks, suggesting that melatonin plays important roles in PSII against LK stress. After a combined treatment of LK stress and melatonin, the values for performance indexes (PIABS, PITotal, and PICS, flux ratios (φP0, ΨE0, and φE0 and specific energy fluxes (ETO/RC were significantly improved compared with those of LK

  1. Temperature dependence of the dielectric properties of rubber wood

    Science.gov (United States)

    Mohammed Firoz Kabir; Wan M. Daud; Kaida B. Khalid; Haji A.A. Sidek

    2001-01-01

    The effect of temperature on the dielectric properties of rubber wood was investigated in three anisotropic directions—longitudinal, radial, and tangential, and at different measurement frequencies. Low frequency measurements were conducted with a dielectric spectrometer, and high frequencies used microwave applied with open-ended coaxial probe sensors. Dielectric...

  2. Note: On the dielectric constant of nanoconfined water

    OpenAIRE

    Zhang, Chao

    2018-01-01

    Investigations of dielectric properties of water in nanoconfinement are highly relevant for various applications. Here, using a simple capacitor model, we show that the low dielectric constant of nanoconfined water found in molecular dynamics simulations can be largely explained by the so-called dielectric dead-layer effect known for ferroelectric nanocapacitors.

  3. Automated SEM and TEM sample preparation applied to copper/low k materials

    Science.gov (United States)

    Reyes, R.; Shaapur, F.; Griffiths, D.; Diebold, A. C.; Foran, B.; Raz, E.

    2001-01-01

    We describe the use of automated microcleaving for preparation of both SEM and TEM samples as done by SELA's new MC500 and TEMstation tools. The MC500 is an automated microcleaving tool that is capable of producing cleaves with 0.25 μm accuracy resulting in SEM-ready samples. The TEMstation is capable of taking a sample output from the MC500 (or from SELA's earlier MC200 tool) and producing a FIB ready slice of 25±5 μm, mounted on a TEM-washer and ready for FIB thinning to electron transparency for TEM analysis. The materials selected for the tool set evaluation mainly included the Cu/TaN/HOSP low-k system. The paper is divided into three sections, experimental approach, SEM preparation and analysis of HOSP low-k, and TEM preparation and analysis of Cu/TaN/HOSP low-k samples. For the samples discussed, data is presented to show the quality of preparation provided by these new automated tools.

  4. Reducing the substrate dependent scanner leveling effect in low-k1 contact printing

    Science.gov (United States)

    Chang, C. S.; Tseng, C. F.; Huang, C. H.; Yang, Elvis; Yang, T. H.; Chen, K. C.

    2015-03-01

    As the scaling down of design rule for high-density memory device, the small depth of focus (DoF) budget may be deteriorated by focus leveling errors, which arises in unpredicted reflectivity from multilayer structures on the topographic wafer. The leveling sensors of ASML scanner use near infrared (NIR) range wavelength which can penetrate through most of films using in semiconductor fabrication such as photo-resist, bottom anti reflective coating (BARC) and dielectric materials. Consequently, the reflected light from underlying substructures would disturb leveling sensors from accurate leveling. The different pattern densities and layout characteristics between array and periphery of a memory chip are expected to result in different leveling signals. Furthermore, the process dependent variations between wafer central and edge areas are also considered to yield different leveling performances during wafer exposure. In this study, lower blind contact immunity was observed for peripheral contacts comparing to the array contacts especially around wafer edge region. In order to overcome this problem, a series of investigations have been carried out. The wafer edge leveling optimization through circuit dependent focus edge clearance (CDFEC) option doesn't get improvement. Air gauge improved process leveling (AGILE) function of ASML immersion scanner doesn't show improved result either. The ILD uniformity improvement and step height treatments around wafer edge such as edge exclusion of film deposition and bevel etching are also ineffective to mitigate the blind contact problem of peripheral patterns. Altering the etch hard-mask stack is finally found to be an effective approach to alleviate the issue. For instance, through either containing high temperature deposition advanced patterning film (APF) in the hard-mask or inserting higher opaque film such as amorphous Si in between the hard-mask stack.

  5. Inertial polarization of dielectrics

    OpenAIRE

    Zavodovsky, A. G.

    2011-01-01

    It was proved that accelerated motion of a linear dielectric causes its polarization. Accelerated translational motion of a dielectric's plate leads to the positive charge of the surface facing the direction of motion. Metal plates of a capacitor were used to register polarized charges on a dielectric's surface. Potential difference between the capacitor plates is proportional to acceleration, when acceleration is constant potential difference grows with the increase of a dielectric's area, o...

  6. Optimal Super Dielectric Material

    Science.gov (United States)

    2015-09-01

    plate capacitor will reduce the net field to an unprecedented extent. This family of materials can form materials with dielectric values orders of... Capacitor -Increase Area (A)............8 b. Multi-layer Ceramic Capacitor -Decrease Thickness (d) .......10 c. Super Dielectric Material-Increase...circuit modeling, from [44], and B) SDM capacitor charge and discharge ...................................................22 Figure 15. Dielectric

  7. Investigation on dielectric relaxation of PMMA-grafted natural rubber incorporated with LiCF{sub 3}SO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Yap, K.S.; Teo, L.P.; Sim, L.N.; Majid, S.R. [Centre for Ionics University of Malaya, Physics Department, University of Malaya, 50603 Kuala Lumpur (Malaysia); Arof, A.K., E-mail: akarof@um.edu.my [Centre for Ionics University of Malaya, Physics Department, University of Malaya, 50603 Kuala Lumpur (Malaysia)

    2012-07-01

    Natural rubber (NR) grafted with 30 wt% poly (methyl methacrylate) (PMMA) and designated as MG30 has been added with varying amounts of LiCF{sub 3}SO{sub 3}. X-ray diffraction (XRD) shows the samples to be amorphous. Fourier transform infrared (FTIR) spectroscopy indicates complexation between the cation of the salt and the oxygen atom of the C=O and -COO- groups of MG30. From electrochemical impedance spectroscopy (EIS), MG30 with 30 wt% LiCF{sub 3}SO{sub 3} salt exhibits the highest ambient conductivity of 1.69 Multiplication-Sign 10{sup -6} S cm{sup -1} and lowest activation energy of 0.24 eV. The dielectric behavior has been analyzed using dielectric permittivity ({epsilon} Prime), dissipation factor (tan {delta}) and dielectric modulus (M{sup Low-Asterisk }) of the samples. The dielectric constant of pure MG30 has been estimated to be {approx}1.86.

  8. Growth and characterization of MMA/SiO2 hybrid low-k thin films for ...

    Indian Academy of Sciences (India)

    We have successfully incorporated MMA monomer and eliminated the polymerization step to lower the dielectric constant of deposited thin film. The presence of peak of C=C bond in Fourier transform infrared (FTIR) spectra and carbon peak in energy dispersive (EDAX) spectra confirms the incorporation of carbon in the film ...

  9. Dielectric properties of fly ash

    Indian Academy of Sciences (India)

    Unknown

    India's annual coal production is used in about 72 power- generating plants and ... performance of this material as cracking catalyst was investigated with ... Chemically, the FA was silica to an extent of 55–70%, followed by ... Cu, Pb, Cd, Ag, Mn, Fe, Ti, Na, Mo, S, P, Zn and Cl in different ... two-probe method. The dielectric ...

  10. Thermosetting resins with high fractions of free volume and inherently low dielectric constants.

    Science.gov (United States)

    Lin, Liang-Kai; Hu, Chien-Chieh; Su, Wen-Chiung; Liu, Ying-Ling

    2015-08-18

    This work demonstrates a new class of thermosetting resins, based on Meldrum's acid (MA) derivatives, which have high fractions of free volume and inherently low k values of about 2.0 at 1 MHz. Thermal decomposition of the MA groups evolves CO2 and acetone to create air-trapped cavities so as to reduce the dielectric constants.

  11. Dielectrics in electric fields

    CERN Document Server

    Raju, Gorur G

    2003-01-01

    Discover nontraditional applications of dielectric studies in this exceptionally crafted field reference or text for seniors and graduate students in power engineering tracks. This text contains more than 800 display equations and discusses polarization phenomena in dielectrics, the complex dielectric constant in an alternating electric field, dielectric relaxation and interfacial polarization, the measurement of absorption and desorption currents in time domains, and high field conduction phenomena. Dielectrics in Electric Fields is an interdisciplinary reference and text for professionals and students in electrical and electronics, chemical, biochemical, and environmental engineering; physical, surface, and colloid chemistry; materials science; and chemical physics.

  12. Lattices of dielectric resonators

    CERN Document Server

    Trubin, Alexander

    2016-01-01

    This book provides the analytical theory of complex systems composed of a large number of high-Q dielectric resonators. Spherical and cylindrical dielectric resonators with inferior and also whispering gallery oscillations allocated in various lattices are considered. A new approach to S-matrix parameter calculations based on perturbation theory of Maxwell equations, developed for a number of high-Q dielectric bodies, is introduced. All physical relationships are obtained in analytical form and are suitable for further computations. Essential attention is given to a new unified formalism of the description of scattering processes. The general scattering task for coupled eigen oscillations of the whole system of dielectric resonators is described. The equations for the  expansion coefficients are explained in an applicable way. The temporal Green functions for the dielectric resonator are presented. The scattering process of short pulses in dielectric filter structures, dielectric antennas  and lattices of d...

  13. Investigation of structural, ferroelectric, piezoelectric and dielectric properties of Ba0.92Ca0.08TiO3-BaTi0.96Zr0.04O3 lead-free electroceramics

    Science.gov (United States)

    Keswani, Bhavna C.; Patil, S. I.; Kolekar, Y. D.

    2018-04-01

    Lead free ferroelectric with composition 0.55Ba0.92Ca0.08TiO3-0.45BaTi0.96Zr0.04O3 (BCT8-BZT4) was synthesized by solid state reaction method and investigated their structural, ferroelectric, piezoelectric and dielectric properties. X-ray diffraction analysis shows that BCT8-BZT4 ceramic possess both tetragonal (space group P4mm) and orthorhombic (space group Amm2) crystal structure which was further confirmed from Raman spectra spectroscopy. The micronized grains were observed from scanning electron micrographs while the presence of polarization-electric field hysteresis loop confirms ferroelectric nature of BCT8-BZT4 ceramic. Higher values of maximum polarization (Pmax = 22.27 μC/cm2), remnant polarization (Pr = 11.61 μC/cm2), coercive electric field (Ec = 4.77 kV/cm) and direct piezoelectric coefficient (d33) approximately 185 pC/N were observed. The real part of dielectric constant with frequency shows the usual dielectric dispersion behaviour at RT. The observed properties show that the lead free BCT8-BZT4 ceramic is suitable for ferroelectric memory device, piezoelectric sensor, capacitor, etc. applications.

  14. Multiscale dipole relaxation in dielectric materials

    DEFF Research Database (Denmark)

    Hansen, Jesper Schmidt

    2016-01-01

    Dipole relaxation from thermally induced perturbations is investigated on different length scales for dielectric materials. From the continuum dynamical equations for the polarisation, expressions for the transverse and longitudinal dipole autocorrelation functions are derived in the limit where ...

  15. Photoconductivity and dielectric studies of potassium pentaborate

    Indian Academy of Sciences (India)

    Single crystal of potassium pentaborate (KB5) has been grown by solution growth ... equipped with the Gunn Oscillator guided with rectangular wave-guide. ... its dielectric behaviour with the change of frequency has also been investigated.

  16. Investigation of the chemistry of the dielectric/FeCoTb interface by x-ray photoelectron spectroscopy and Auger electron spectroscopy

    International Nuclear Information System (INIS)

    Stickle, W.F.; Coulman, D.

    1987-01-01

    The interfacial chemistry of magneto-optic structures of sputter deposited SiO, SiO 2 , Si 3 N 4 /FeCoTb/SiO, SiO 2 , and Si 3 N 4 was studied in detail by x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). XPS and AES depth profiles have revealed a substantial amount of redox chemistry at the dielectric/rare-earth transition metal interfaces. The chemical reactions occur preferentially with the terbium as revealed in the XPS portion of the study by the formation of terbium oxide and terbium silicide. In the case of Si 3 N 4 evidence of TbN/sub x/ has also been observed. ''As deposited'' and annealed samples of the magneto-optic structures are compared and contrasted. It is concluded that Si 3 N 4 is a superior dielectric for magneto-optic media

  17. Kinetic Monte Carlo Simulation of Cation Diffusion in Low-K Ceramics

    Science.gov (United States)

    Good, Brian

    2013-01-01

    Low thermal conductivity (low-K) ceramic materials are of interest to the aerospace community for use as the thermal barrier component of coating systems for turbine engine components. In particular, zirconia-based materials exhibit both low thermal conductivity and structural stability at high temperature, making them suitable for such applications. Because creep is one of the potential failure modes, and because diffusion is a mechanism by which creep takes place, we have performed computer simulations of cation diffusion in a variety of zirconia-based low-K materials. The kinetic Monte Carlo simulation method is an alternative to the more widely known molecular dynamics (MD) method. It is designed to study "infrequent-event" processes, such as diffusion, for which MD simulation can be highly inefficient. We describe the results of kinetic Monte Carlo computer simulations of cation diffusion in several zirconia-based materials, specifically, zirconia doped with Y, Gd, Nb and Yb. Diffusion paths are identified, and migration energy barriers are obtained from density functional calculations and from the literature. We present results on the temperature dependence of the diffusivity, and on the effects of the presence of oxygen vacancies in cation diffusion barrier complexes as well.

  18. Characterization of dielectric materials

    Energy Technology Data Exchange (ETDEWEB)

    King, Danny J.; Babinec, Susan; Hagans, Patrick L.; Maxey, Lonnie C.; Payzant, Edward A.; Daniel, Claus; Sabau, Adrian S.; Dinwiddie, Ralph B.; Armstrong, Beth L.; Howe, Jane Y.; Wood, III, David L.; Nembhard, Nicole S.

    2017-06-27

    A system and a method for characterizing a dielectric material are provided. The system and method generally include applying an excitation signal to electrodes on opposing sides of the dielectric material to evaluate a property of the dielectric material. The method can further include measuring the capacitive impedance across the dielectric material, and determining a variation in the capacitive impedance with respect to either or both of a time domain and a frequency domain. The measured property can include pore size and surface imperfections. The method can still further include modifying a processing parameter as the dielectric material is formed in response to the detected variations in the capacitive impedance, which can correspond to a non-uniformity in the dielectric material.

  19. Dielectric Actuation of Polymers

    Science.gov (United States)

    Niu, Xiaofan

    Dielectric polymers are widely used in a plurality of applications, such as electrical insulation, dielectric capacitors, and electromechanical actuators. Dielectric polymers with large strain deformations under an electric field are named dielectric elastomers (DE), because of their relative low modulus, high elongation at break, and outstanding resilience. Dielectric elastomer actuators (DEA) are superior to traditional transducers as a muscle-like technology: large strains, high energy densities, high coupling efficiency, quiet operation, and light weight. One focus of this dissertation is on the design of DE materials with high performance and easy processing. UV radiation curing of reactive species is studied as a generic synthesis methodology to provide a platform for material scientists to customize their own DE materials. Oligomers/monomers, crosslinkers, and other additives are mixed and cured at appropriate ratios to control the stress-strain response, suppress electromechanical instability of the resulting polymers, and provide stable actuation strains larger than 100% and energy densities higher than 1 J/g. The processing is largely simplified in the new material system by removal of the prestretching step. Multilayer stack actuators with 11% linear strain are demonstrated in a procedure fully compatible with industrial production. A multifunctional DE derivative material, bistable electroactive polymer (BSEP), is invented enabling repeatable rigid-to-rigid deformation without bulky external structures. Bistable actuation allows the polymer actuator to have two distinct states that can support external load without device failure. Plasticizers are used to lower the glass transition temperature to 45 °C. Interpenetrating polymer network structure is established inside the BSEP to suppress electromechanical instability, providing a breakdown field of 194 MV/m and a stable bistable strain as large as 228% with a 97% strain fixity. The application of BSEP

  20. A dielectric approach to high temperature superconductivity

    International Nuclear Information System (INIS)

    Mahanty, J.; Das, M.P.

    1989-01-01

    The dielectric response of an electron-ion system to the presence of a pair of charges is investigated. From the nature of the dielectric function, it is shown that a strong attractive pair formation is possible depending on the dispersion of the ion branches. The latter brings a reduction to the sound velocity which is used as a criterion for the superconductivity. By solving the BCS equation with the above dielectric function, we obtain a reasonable value of T/sub c/. 17 refs., 1 fig

  1. Inductive dielectric analyzer

    International Nuclear Information System (INIS)

    Agranovich, Daniel; Popov, Ivan; Ben Ishai, Paul; Feldman, Yuri; Polygalov, Eugene

    2017-01-01

    One of the approaches to bypass the problem of electrode polarization in dielectric measurements is the free electrode method. The advantage of this technique is that, the probing electric field in the material is not supplied by contact electrodes, but rather by electromagnetic induction. We have designed an inductive dielectric analyzer based on a sensor comprising two concentric toroidal coils. In this work, we present an analytic derivation of the relationship between the impedance measured by the sensor and the complex dielectric permittivity of the sample. The obtained relationship was successfully employed to measure the dielectric permittivity and conductivity of various alcohols and aqueous salt solutions. (paper)

  2. Method of making dielectric capacitors with increased dielectric breakdown strength

    Science.gov (United States)

    Ma, Beihai; Balachandran, Uthamalingam; Liu, Shanshan

    2017-05-09

    The invention is directed to a process for making a dielectric ceramic film capacitor and the ceramic dielectric laminated capacitor formed therefrom, the dielectric ceramic film capacitors having increased dielectric breakdown strength. The invention increases breakdown strength by embedding a conductive oxide layer between electrode layers within the dielectric layer of the capacitors. The conductive oxide layer redistributes and dissipates charge, thus mitigating charge concentration and micro fractures formed within the dielectric by electric fields.

  3. Applicability of point-dipoles approximation to all-dielectric metamaterials

    DEFF Research Database (Denmark)

    Kuznetsova, S. M.; Andryieuski, Andrei; Lavrinenko, Andrei

    2015-01-01

    All-dielectric metamaterials consisting of high-dielectric inclusions in a low-dielectric matrix are considered as a low-loss alternative to resonant metal-based metamaterials. In this paper we investigate the applicability of the point electric and magnetic dipoles approximation to dielectric meta......-atoms on the example of a dielectric ring metamaterial. Despite the large electrical size of high-dielectric meta-atoms, the dipole approximation allows for accurate prediction of the metamaterials properties for the rings with diameters up to approximate to 0.8 of the lattice constant. The results provide important...... guidelines for design and optimization of all-dielectric metamaterials....

  4. Investigation of the phase formation and dielectric properties of Bi{sub 7}Ta{sub 3}O{sub 18}

    Energy Technology Data Exchange (ETDEWEB)

    Chon, M.P. [Department of Chemistry, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Tan, K.B., E-mail: tankb@science.upm.my [Department of Chemistry, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Khaw, C.C. [Department of Mechanical and Material Engineering, Faculty of Engineering and Science, Universiti Tunku Abdul Rahman, 53300 Setapak, Kuala Lumpur (Malaysia); Zainal, Z.; Taufiq Yap, Y.H. [Department of Chemistry, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Chen, S.K. [Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Tan, P.Y. [Department of Chemistry, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia)

    2014-03-25

    Highlights: • Synthesis condition of Bi{sub 7}TaO{sub 3}O{sub 18} had been determined. • Recombination of intermediate BiTaO{sub 4} and Bi{sub 3}TaO{sub 7} phases are required for the Bi{sub 7}TaO{sub 3}O{sub 18} phase formation. • Stable material as confirmed by thermal and structural analyses. • Typical ferroelectric showing high dielectric constants and low losses. • Resonance and thermal activated polarisation processes are responsible for the excellent dielectric characteristic. -- Abstract: Polycrystalline Bi{sub 7}Ta{sub 3}O{sub 18} was synthesised at the firing temperature of 950 °C over 18 h via conventional solid state method. It crystallised in a monoclinic system with space group C2/m, Z = 4 similar to that reported diffraction pattern in the Inorganic Crystal Structure Database (ICSD), 1-89-6647. The refined lattice parameters were a = 34.060 (3) Å, b = 7.618 (9) Å, c = 6.647 (6) Å with α = γ = 90° and β = 109.210 (7), respectively. The intermediate phase was predominantly in high-symmetry cubic structure below 800 °C and finally evolved into a low-symmetry monoclinic structured, Bi{sub 7}Ta{sub 3}O{sub 18} at 950 °C. The sample contained grains of various shapes with different orientations in the size ranging from 0.33–22.70 μm. The elemental analysis showed the sample had correct stoichiometry with negligible Bi{sub 2}O{sub 3} loss. Bi{sub 7}Ta{sub 3}O{sub 18} was thermally stable and it exhibited a relatively high relative permittivity, 241 and low dielectric loss, 0.004 at room temperature, ∼30 °C and frequency of 1 MHz.

  5. Optimization of silver-dielectric-silver nanoshell for sensing applications

    International Nuclear Information System (INIS)

    Shirzaditabar, Farzad; Saliminasab, Maryam

    2013-01-01

    In this paper, resonance light scattering (RLS) properties of a silver-dielectric-silver nanoshell, based on quasi-static approach and plasmon hybridization theory, are investigated. Scattering spectrum of silver-dielectric-silver nanoshell has two intense and clearly separated RLS peaks and provides a potential for biosensing based on surface plasmon resonance and surface-enhanced Raman scattering. The two RLS peaks in silver-dielectric-silver nanoshell are optimized by tuning the geometrical dimensions. In addition, the optimal geometry is discussed to obtain the high sensitivity of silver-dielectric-silver nanoshell. As the silver core radius increases, the sensitivity of silver-dielectric-silver nanoshell decreases whereas increasing the middle dielectric thickness increases the sensitivity of silver-dielectric-silver nanoshell

  6. Structural, Optical, and Dielectric Investigations of the Relaxor PLZT 9,75/65/35 Ceramics Irradiated by High-Current Pulsed Electron Beam

    CERN Document Server

    Efimov, V V; Kalmikov, A V; Klevtsova, E A; Minashkin, V F; Novikova, N N; Sikolenko, V V; Skripnik, A V; Sternberg, A; Tiutiunnikov, S I; Yakovlev, V A

    2002-01-01

    First time comprehensive study of high-current pulsed electron irradiation effects on the structural, optical and dielectric properties of relaxor (Pb_{(1-x)}La^{x}(Zr_{0.65}Ti_{0.35})_{1-x/4}O_{3} ceramics with x=9.75% has been provided. The electron beam had the following parameters: energy E_{e}=250 keV, current density J_{e}=1000 A/cm^{2}, pulse duration tau = 300 ns, density 10^{15} electrons/cm^{2} per pulse. Infrared reflectivity spectra in the region of 100-2000 cm^{-1} were obtained in virgin, irradiated by 1500 pulses and annealed up to t=500^{circ}C ceramics. The reconstruction of perovskite ABO_{3} structure in irradiated samples has been studied by complex use of X-ray and neutron scattering and IR spectroscopy techniques revealing the changes in transverse and longitudinal phonon modes, oscillators strength and damping of modes. Radiation effects on temperature behaviour of dielectric permittivity in the region of phase transition were studied. The possible mechanisms of pulsed electron irradiat...

  7. Contemporary dielectric materials

    CERN Document Server

    Saravanan, R

    2016-01-01

    This book deals with experimental results of the physical characterization of several important, dielectric materials of great current interest. The experimental tools used for the analysis of these materials include X-ray diffraction, dielectric measurements, magnetic measurements using a vibrating sample magnetometer, optical measurements using a UV-Visible spectrometer etc.

  8. Dielectric Modulated FET (DMFET)

    Indian Academy of Sciences (India)

    First page Back Continue Last page Graphics. Working Principle: Change in Dielectric constant due to immobilization of biomolecules in the nanogap cavity leads to change in effective gate capacitance and thus gate bias for FET. Working Principle: Change in Dielectric constant due to immobilization of biomolecules in the ...

  9. Thermal dielectric function

    International Nuclear Information System (INIS)

    Moneta, M.

    1999-01-01

    Thermal dielectric functions ε(k,ω) for homogeneous electron gas were determined and discussed. The ground state of the gas is described by the Fermi-Dirac momentum distribution. The low and high temperature limits of ε(k,ω) were related to the Lindhard dielectric function and to ε(k, omega) derived for Boltzmann and for classical momentum distributions, respectively. (author)

  10. Light in complex dielectrics

    NARCIS (Netherlands)

    Schuurmans, F.J.P.

    1999-01-01

    In this thesis the properties of light in complex dielectrics are described, with the two general topics of "modification of spontaneous emission" and "Anderson localization of light". The first part focuses on the spontaneous emission rate of an excited atom in a dielectric host with variable

  11. Experimental Characterization of Dielectric Properties in Fluid Saturated Artificial Shales

    Directory of Open Access Journals (Sweden)

    Roman Beloborodov

    2017-01-01

    Full Text Available High dielectric contrast between water and hydrocarbons provides a useful method for distinguishing between producible layers of reservoir rocks and surrounding media. Dielectric response at high frequencies is related to the moisture content of rocks. Correlations between the dielectric permittivity and specific surface area can be used for the estimation of elastic and geomechanical properties of rocks. Knowledge of dielectric loss-factor and relaxation frequency in shales is critical for the design of techniques for effective hydrocarbon extraction and production from unconventional reservoirs. Although applicability of dielectric measurements is intriguing, the data interpretation is very challenging due to many factors influencing the dielectric response. For instance, dielectric permittivity is determined by mineralogical composition of solid fraction, volumetric content and composition of saturating fluid, rock microstructure and geometrical features of its solid components and pore space, temperature, and pressure. In this experimental study, we investigate the frequency dependent dielectric properties of artificial shale rocks prepared from silt-clay mixtures via mechanical compaction. Samples are prepared with various clay contents and pore fluids of different salinity and cation compositions. Measurements of dielectric properties are conducted in two orientations to investigate the dielectric anisotropy as the samples acquire strongly oriented microstructures during the compaction process.

  12. Pretranslational regulation of Na-K-ATPase in cultured canine kidney cells by low K

    Energy Technology Data Exchange (ETDEWEB)

    Bowen, J.W.; McDonough, A.

    1987-02-01

    Long-term upregulation of the sodium pump (Na-K-adenosine triphosphatase (Na-K-ATPase)) entails an increase in the number of enzyme molecules. The authors incubated Madin-Darby canine kidney (MDCK) cells in low K medium and studied the time course and magnitude of change in the relative abundance of the two Na-K-ATPase subunits ( and US ), in the synthesis rate of the subunits, and in the relative abundance of - and US -mRNA. When cells were incubated in medium containing 0.25 mM K , intracellular Na increased. The relative abundance of Na-K-ATPase subunits, measured with ( SVI)-labelled immunoblots of cell homogenates, increases such that after 24 h was 1.71 +/- 0.33 and US was 1.67 +/- 0.22 times control. After 8 h of K depletion, -synthesis rate, measured by immunoprecipitation of pulse-labelled cells, increased to 2.30 +/- 0.50 and beta increased to 2.07 +/- 0.42 times control. The - and US -subunit mRNA abundance, measured by hybridizing - and US -cDNA probes to total RNA, increased within 30 min to 1.93 +/- 0.24 and 2.29 +/- 0.64 times control, respectively. They conclude that regulatory adjustments of Na-K-ATPase abundance involve an increase in translation after a rapid and coordinate increase in the concentrations of - and US -subunit mRNA.

  13. Dielectric effect on electric fields in the vicinity of the metal–vacuum–dielectric junction

    International Nuclear Information System (INIS)

    Chung, M.S.; Mayer, A.; Miskovsky, N.M.; Weiss, B.L.; Cutler, P.H.

    2013-01-01

    The dielectric effect was theoretically investigated in order to describe the electric field in the vicinity of a junction of a metal, dielectric, and vacuum. The assumption of two-dimensional symmetry of the junction leads to a simple analytic form and to a systematic numerical calculation for the field. The electric field obtained for the triple junction was found to be enhanced or reduced according to a certain criterion determined by the contact angles and dielectric constant. Further numerical calculations of the dielectric effect show that an electric field can experience a larger enhancement or reduction for a quadruple junction than that achieved for the triple junction. It was also found that even though it changes slowly in comparison with the shape effect, the dielectric effect was noticeably large over the entire range of the shape change. - Highlights: ► This work explains how a very strong electric field can be produced due to the dielectric in the vicinity of metal–dielectric contact. ► This work deals with configurations which enhance electric fields using the dielectric effect. The configuration is a type of junction at which metal, vacuum and dielectric meet. ► This work suggests the criterion to determine whether field enhancement occurs or not in the triple junction of metal, vacuum and dielectric. ► This work suggests that a quadruple junction is more effective in enhancing the electric field than a triple junction. The quadruple junction is formed by an additional vacuum portion to the triple junction. ► This work suggests that a triple junction can be a breakthrough candidate for a cold electron source

  14. Improved Dielectric Films For Capacitors

    Science.gov (United States)

    Yen, Shiao-Ping S.; Lewis, Carol R.; Cygan, Peter J.; Jow, T. Richard

    1994-01-01

    Dielectric films made from blends of some commercially available high-dielectric-constant cyanoresins with each other and with cellulose triacetate (CTA) have both high dielectric constants and high breakdown strengths. Dielectric constants as high as 16.2. Films used to produce high-energy-density capacitors.

  15. Structure and performance of dielectric films based on self-assembled nanocrystals with a high dielectric constant.

    Science.gov (United States)

    Huang, Limin; Liu, Shuangyi; Van Tassell, Barry J; Liu, Xiaohua; Byro, Andrew; Zhang, Henan; Leland, Eli S; Akins, Daniel L; Steingart, Daniel A; Li, Jackie; O'Brien, Stephen

    2013-10-18

    Self-assembled films built from nanoparticles with a high dielectric constant are attractive as a foundation for new dielectric media with increased efficiency and range of operation, due to the ability to exploit nanofabrication techniques and emergent electrical properties originating from the nanoscale. However, because the building block is a discrete one-dimensional unit, it becomes a challenge to capture potential enhancements in dielectric performance in two or three dimensions, frequently due to surface effects or the presence of discontinuities. This is a recurring theme in nanoparticle film technology when applied to the realm of thin film semiconductor and device electronics. We present the use of chemically synthesized (Ba,Sr)TiO3 nanocrystals, and a novel deposition-polymerization technique, as a means to fabricate the dielectric layer. The effective dielectric constant of the film is tunable according to nanoparticle size, and effective film dielectric constants of up to 34 are enabled. Wide area and multilayer dielectrics of up to 8 cm(2) and 190 nF are reported, for which the building block is an 8 nm nanocrystal. We describe models for assessing dielectric performance, and distinct methods for improving the dielectric constant of a nanocrystal thin film. The approach relies on evaporatively driven assembly of perovskite nanocrystals with uniform size distributions in a tunable 7-30 nm size range, coupled with the use of low molecular weight monomer/polymer precursor chemistry that can infiltrate the porous nanocrystal thin film network post assembly. The intercrystal void space (low k dielectric volume fraction) is minimized, while simultaneously promoting intercrystal connectivity and maximizing volume fraction of the high k dielectric component. Furfuryl alcohol, which has good affinity to the surface of (Ba,Sr)TiO3 nanocrystals and miscibility with a range of solvents, is demonstrated to be ideal for the production of nanocomposites. The

  16. Dielectric materials for electrical engineering

    CERN Document Server

    Martinez-Vega, Juan

    2013-01-01

    Part 1 is particularly concerned with physical properties, electrical ageing and modeling with topics such as the physics of charged dielectric materials, conduction mechanisms, dielectric relaxation, space charge, electric ageing and life end models and dielectric experimental characterization. Part 2 concerns some applications specific to dielectric materials: insulating oils for transformers, electrorheological fluids, electrolytic capacitors, ionic membranes, photovoltaic conversion, dielectric thermal control coatings for geostationary satellites, plastics recycling and piezoelectric poly

  17. Cast dielectric composite linear accelerator

    Science.gov (United States)

    Sanders, David M [Livermore, CA; Sampayan, Stephen [Manteca, CA; Slenes, Kirk [Albuquerque, NM; Stoller, H M [Albuquerque, NM

    2009-11-10

    A linear accelerator having cast dielectric composite layers integrally formed with conductor electrodes in a solventless fabrication process, with the cast dielectric composite preferably having a nanoparticle filler in an organic polymer such as a thermosetting resin. By incorporating this cast dielectric composite the dielectric constant of critical insulating layers of the transmission lines of the accelerator are increased while simultaneously maintaining high dielectric strengths for the accelerator.

  18. Mask compensation for process flare in 193nm very low k1 lithography

    Science.gov (United States)

    Lee, Jeonkyu; Lee, Taehyeong; Oh, Sangjin; Kang, Chunsoo; Kim, Jungchan; Choi, Jaeseung; Park, Chanha; Yang, Hyunjo; Yim, Donggyu; Do, Munhoe; Su, Irene; Song, Hua; Choi, Jung-Hoe; Fan, Yongfa; Wang, Anthony C.; Lee, Sung-Woo; Boone, Robert; Lucas, Kevin

    2013-04-01

    Traditional rule-based and model-based OPC methods only simulate in a very local area (generally less than 1um) to identify and correct for systematic optical or process problems. Despite this limitation, however, these methods have been very successful for many technology generations and have been a major reason for the industry being able to tremendously push down lithographic K1. This is also enabled by overall good across-exposure field lithographic process control which has been able to minimize longer range effects across the field. Now, however, the situation has now become more complex. The lithographic single exposure resolution limit with 1.35NA tools remains about 80nm pitch but the final wafer dimensions and final wafer pitches required in advanced technologies continue to scale down. This is putting severe strain on lithographic process and OPC CD control. Therefore, formerly less important 2nd order effects are now starting to have significant CD control impact if not corrected for. In this paper, we provide examples and discussion of how optical and chemical flare related effects are becoming more problematic, especially at the boundaries of large, dense memory arrays. We then introduce a practical correction method for these systematic effects which reuses some of the recent long range effect correcting OPC techniques developed for EUV pattern correction (such as EUV flare). We next provide analysis of the benefits of these OPC methods for chemical flare issues in 193nm lithography very low K1 lithography. Finally, we summarize our work and briefly mention possible future extensions.

  19. Structural characterization of amorphous materials applied to low-k organosilicate materials

    Energy Technology Data Exchange (ETDEWEB)

    Raymunt, Alexandra Cooper, E-mail: amc442@cornell.edu; Clancy, Paulette

    2014-07-01

    We present a methodology to create computational atomistic-level models of porous amorphous materials, in particular, an organosilicate structure for ultra-low dielectric constant (ULK) materials known as “SiCOH.” The method combines the ability to satisfy geometric and chemical constraints with subsequent molecular dynamics (MD) techniques as a way to capture the complexities of the porous and amorphous nature of these materials. The motivation for studying ULK materials arises from a desire to understand the origin of the material's weak mechanical properties. The first step towards understanding how these materials might behave under processing conditions that are intended to improve their mechanical properties is to develop a suitable computational model of the material and hence is the focus of this paper. We define the atomic-scale topology of ULK materials that have been produced by chemical vapor deposition-like experimental techniques. Specifically, we have developed a method of defining the initial atom configurations and interactions, as well as a method to rearrange these starting configurations into relaxed structures. The main advantage of our described approach is the ability of our structure generation method to maintain a random distribution of relevant structural motifs throughout the structure, without relying on large unit cells and periodic boundaries to approximate the behavior of this complex material. The minimization of the different models was accomplished using replica exchange molecular dynamics (REMD). Following the generation of the ‘equilibrium’ configurations that result from REMD for a ULK material of a pre-specified composition, we demonstrate that its structural properties, including bonding topology, porosity and pore size distribution are similar to experimentally used ULK materials. - Highlights: • Method for creating a model of a low dielectric constant organosilicate material • Method of defining porosity in

  20. Investigation and control of the {{\\rm{O}}}_{3}- to {NO}-transition in a novel sub-atmospheric pressure dielectric barrier discharge

    Science.gov (United States)

    Bansemer, Robert; Schmidt-Bleker, Ansgar; van Rienen, Ursula; Weltmann, Klaus-Dieter

    2017-06-01

    A novel flow-driven dielectric barrier discharge concept is presented, which uses a Venturi pump to transfer plasma-generated reactive oxygen and nitrogen species from a sub-atmospheric pressure (200{--}600 {mbar}) discharge region to ambient pressure and can be operated with air. By adjusting the working pressure of the device, the plasma chemistry can be tuned continuously from an ozone ({{{O}}}3)-dominated mode to a nitrogen oxides ({{NO}}x)-only mode. The plasma source is characterized focusing on the mechanisms effecting this mode change. The composition of the device’s output gas was determined using Fourier-transform infrared spectroscopy. The results are correlated to measurements of discharge chamber pressure and temperature as well as of input power. It is found that the mode-change temperature can be controlled by the discharge chamber pressure. The source concept is capable of generating an {{NO}}x-dominated plasma chemistry at gas temperatures distinctly below 400 {{K}}. Through mixing of the processed gas stream with a second flow of pressurized air required for the operation of the Venturi pump, the resulting product gas stream remains close to room temperature. A reduced zero-dimensional reaction kinetics model with only seven reactions is capable of describing the observed pressure- and temperature-dependence of the {{{O}}}3 to {{NO}}x mode-change.

  1. Investigation of the in-plane and out-of-plane electrical properties of metallic nanoparticles in dielectric matrix thin films elaborated by atomic layer deposition

    Science.gov (United States)

    Thomas, D.; Puyoo, E.; Le Berre, M.; Militaru, L.; Koneti, S.; Malchère, A.; Epicier, T.; Roiban, L.; Albertini, D.; Sabac, A.; Calmon, F.

    2017-11-01

    Pt nanoparticles in a Al2O3 dielectric matrix thin films are elaborated by means of atomic layer deposition. These nanostructured thin films are integrated in vertical and planar test structures in order to assess both their in-plane and out-of-plane electrical properties. A shadow edge evaporation process is used to develop planar devices with electrode separation distances in the range of 30 nm. Both vertical and planar test structures show a Poole-Frenkel conduction mechanism. Low trap energy levels (<0.1 eV) are identified for the two test structures which indicates that the Pt islands themselves are not acting as traps in the PF mechanism. Furthermore, a more than three order of magnitude current density difference is observed between the two geometries. This electrical anisotropy is attributed to a large electron mobility difference in the in-plane and out-of-plane directions which can be related to different trap distributions in both directions.

  2. Dielectric-Spectroscopic and ac Conductivity Investigations on Manganese Doped Layered Na1.9Li0.1Ti3O7 Ceramics

    International Nuclear Information System (INIS)

    Pal, Dharmendra; Pandey, J. L.; Pal, Shri

    2009-01-01

    The dielectric-spectroscopic and ac conductivity studies firstly carried out on layered manganese doped Sodium Lithium Trititanates (Na 1.9 Li 0.1 Ti 3 O 7 ). The dependence of loss tangent (Tanδ), relative permittivity (ε r ) and ac conductivity (σ ac ) in temperature range 373-723K and frequency range 100Hz-1MHz studied on doped derivatives. Various conduction mechanisms are involved during temperature range of study like electronic hopping conduction in lowest temperature region, for MSLT-1 and MSLT-2. The hindered interlayer ionic conduction exists with electronic hopping conduction for MSLT-3. The associated interlayer ionic conduction exists in mid temperature region for all doped derivatives. In highest temperature region modified interlayer ionic conduction along with the polaronic conduction, exist for MSLT-1, MSLT-2, and only modified interlayer ionic conduction for MSLT-3. The loss tangent (Tanδ) in manganese-doped derivatives of layered Na 1.9 Li 0.1 Ti 3 O 7 ceramic may be due to contribution of electric conduction, dipole orientation, and space charge polarization. The corresponding increase in the values of relative permittivity may be due to increase in number of dipoles in the interlayer space while the corresponding decrease in the values of relative permittivity may be due to the increase in the leakage current due to the higher doping

  3. Structural, dielectric and electrical properties of Sm-modified Pb ...

    Indian Academy of Sciences (India)

    Unknown

    diffraction (XRD) analysis, detailed temperature and frequency dependence dielectric measurements on them. The a.c. conductivity has been investigated over a wide range of temperature and the activation energy (Ea.c.) has also been calculated. It is observed that (i) the dielectric permittivity (ε) and loss tangent (tan δ) are.

  4. Effect of CHF3 Plasma Treatment on the Characteristics of SiCOH Low-k Film

    International Nuclear Information System (INIS)

    Xing Zhenyu; Ye Chao; Yuan Jing; Xu Yijun; Ning Zhaoyuan

    2009-01-01

    The characteristics of SiCOH low dielectric constant film treated by a trifluromethane (CHF 3 ) electron cyclotron resonance (ECR) plasma was investigated. The flat-band voltage V FB and leakage current of the Cu/SiCOH/Si structure, and the hydrophobic property of the SiCOH film were obtained by the measurements of capacitance-voltage, current-voltage and water contact angle. The structures of the SiCOH film were also analyzed by Fourier transform infrared spectroscopy and atomic force microscopy. The CHF 3 plasma treatment of the SiCOH film led to a reduction in both the flat-band voltage V FB shift and leakage current of the Cu/SiCOH/Si structure, a decrease in surface roughness, and a deterioration of the hydrophobic property. The changes in the film's characteristics were related to the formation of Si-F bond, the increase in Si-OH bond, and the C:F deposition at the surface of the SiCOH film.

  5. Ellipsometry with phase and azimuth modulation: Investigation of the dielectric constant of thin films of Th and Ag deposited onto Au electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Chao, F; Costa, M

    1981-08-07

    Ellipsometry with phase and azimuth modulation was used to measure the variations with coverage in the dielectric constant epsilonsub(f) = epsilon/sub 1/ - iepsilon/sub 2/ of thin films of thallium and silver deposited onto polycrystalline gold electrodes. In the underpotential deposition (UPD) zone the epsilon/sub 2/ versus theta curves for both systems present maxima at theta approx. equal to 0.5 which are associated with points of inflexion on the epsilon/sub 1/ versus theta curves; these may correspond to a transition between two two-dimensional structures, one of which occurs for theta < 0.5 and the other for theta > 0.5. A change in the direction of the variations in epsilon/sub 1/ versus theta and epsilon/sub 2/ versus theta corresponds to the beginning of nucleation. It takes place at theta approx. equal to 1 for the Tl/sup +/ - Au system and at theta approx. equal to 0.5 for Ag/sup +/ - Au. For silver coverage, the more condensed two-dimensional structure seems to include metallic nuclei. When theta > 1, at the same coverage different values of epsilon/sub 1/ and epsilon/sub 2/ are observed according to the rate of deposition, i.e. according to the size of the crystallites. The limiting values of epsilonsub(f) are in good agreement with the values determined in vacuum and reported in the literature. For wavelengths lambda > 500 nm, the results are interpreted quantitatively through Drude relations assuming that both the surface density N of the free electrons and their relaxation time tau vary with theta. For Tl/sup +/ - Au the variation of N in the UPD zone corresponds to a residual charge q = 0.29 on the thallium adatom (..delta..N = 5.8 x 10/sup 22/ cm/sup -3/ for theta = 1), whereas for Ag/sup +/ - Au the residual charge on the adatom is negligible. For the thallium film the variation in tau implies an increase in the surface diffusivity with theta in the UPD zone and a decrease after the first monolayer. For the silver films the specularity of the

  6. Transport and dielectric properties of double perovskite Pr2CoFeO6

    Science.gov (United States)

    Pal, Arkadeb; Singh, A.; Gangwar, V. K.; Chatterjee, Sandip

    2018-04-01

    The transport and dielectric measurements have been investigated for the polycrystalline double perovskite Pr2CoFeO6. In the temperature dependent resistivity measurement, we have observed semiconducting nature of the sample with activation energy 0.246 eV. In dielectric measurement as a function of temperature, a giant value of dielectric constant is observed at room temperature, the frequency dependence suggests a relaxor type dielectric relaxation.

  7. Super Dielectric Materials.

    Science.gov (United States)

    Fromille, Samuel; Phillips, Jonathan

    2014-12-22

    Evidence is provided here that a class of materials with dielectric constants greater than 10⁵ at low frequency (dielectric materials (SDM), can be generated readily from common, inexpensive materials. Specifically it is demonstrated that high surface area alumina powders, loaded to the incipient wetness point with a solution of boric acid dissolved in water, have dielectric constants, near 0 Hz, greater than 4 × 10⁸ in all cases, a remarkable increase over the best dielectric constants previously measured for energy storage capabilities, ca. 1 × 10⁴. It is postulated that any porous, electrically insulating material (e.g., high surface area powders of silica, titania, etc. ), filled with a liquid containing a high concentration of ionic species will potentially be an SDM. Capacitors created with the first generated SDM dielectrics (alumina with boric acid solution), herein called New Paradigm Super (NPS) capacitors display typical electrostatic capacitive behavior, such as increasing capacitance with decreasing thickness, and can be cycled, but are limited to a maximum effective operating voltage of about 0.8 V. A simple theory is presented: Water containing relatively high concentrations of dissolved ions saturates all, or virtually all, the pores (average diameter 500 Å) of the alumina. In an applied field the positive ionic species migrate to the cathode end, and the negative ions to the anode end of each drop. This creates giant dipoles with high charge, hence leading to high dielectric constant behavior. At about 0.8 V, water begins to break down, creating enough ionic species to "short" the individual water droplets. Potentially NPS capacitor stacks can surpass "supercapacitors" in volumetric energy density.

  8. Super Dielectric Materials

    Directory of Open Access Journals (Sweden)

    Samuel Fromille

    2014-12-01

    Full Text Available Evidence is provided here that a class of materials with dielectric constants greater than 105 at low frequency (<10−2 Hz, herein called super dielectric materials (SDM, can be generated readily from common, inexpensive materials. Specifically it is demonstrated that high surface area alumina powders, loaded to the incipient wetness point with a solution of boric acid dissolved in water, have dielectric constants, near 0 Hz, greater than 4 × 108 in all cases, a remarkable increase over the best dielectric constants previously measured for energy storage capabilities, ca. 1 × 104. It is postulated that any porous, electrically insulating material (e.g., high surface area powders of silica, titania, etc., filled with a liquid containing a high concentration of ionic species will potentially be an SDM. Capacitors created with the first generated SDM dielectrics (alumina with boric acid solution, herein called New Paradigm Super (NPS capacitors display typical electrostatic capacitive behavior, such as increasing capacitance with decreasing thickness, and can be cycled, but are limited to a maximum effective operating voltage of about 0.8 V. A simple theory is presented: Water containing relatively high concentrations of dissolved ions saturates all, or virtually all, the pores (average diameter 500 Å of the alumina. In an applied field the positive ionic species migrate to the cathode end, and the negative ions to the anode end of each drop. This creates giant dipoles with high charge, hence leading to high dielectric constant behavior. At about 0.8 V, water begins to break down, creating enough ionic species to “short” the individual water droplets. Potentially NPS capacitor stacks can surpass “supercapacitors” in volumetric energy density.

  9. Features of dielectric response in PMN-PT ferroelectric ceramics

    International Nuclear Information System (INIS)

    Guerra, J D S; Araujo, E B; Guarany, C A; Reis, R N; Lima, E C

    2008-01-01

    In this paper, electrical and structural properties were reported for pyrochlore free (1 - x)[Pb(Mg 1/3 Nb 2/3 )O 3 ] - xPbTiO 3 (PMN-PT) (with 35 mol% PbTiO 3 ) ceramics obtained from fine powders. Dielectric studies were focused on the investigation of the complex dielectric permittivity (ε' - iε'') as a function of frequency and temperature. The effects of the dc applied electric field on dielectric response were also investigated. Results revealed a field dependence dielectric anomaly in the dielectric permittivity curves (ε(T)) in the low dc electric field region, which in turn prevails in the whole analysed frequency interval. To the best of our knowledge, these properties for the PMN-PT ceramic system have not been reported before as in this work. The results were analysed within the framework of the current models found in the literature.

  10. Thermally switchable dielectrics

    Science.gov (United States)

    Dirk, Shawn M.; Johnson, Ross S.

    2013-04-30

    Precursor polymers to conjugated polymers, such as poly(phenylene vinylene), poly(poly(thiophene vinylene), poly(aniline vinylene), and poly(pyrrole vinylene), can be used as thermally switchable capacitor dielectrics that fail at a specific temperature due to the non-conjugated precursor polymer irreversibly switching from an insulator to the conjugated polymer, which serves as a bleed resistor. The precursor polymer is a good dielectric until it reaches a specific temperature determined by the stability of the leaving groups. Conjugation of the polymer backbone at high temperature effectively disables the capacitor, providing a `built-in` safety mechanism for electronic devices.

  11. Evaluation of high temperature capacitor dielectrics

    Science.gov (United States)

    Hammoud, Ahmad N.; Myers, Ira T.

    1992-01-01

    Experiments were carried out to evaluate four candidate materials for high temperature capacitor dielectric applications. The materials investigated were polybenzimidazole polymer and three aramid papers: Voltex 450, Nomex 410, and Nomex M 418, an aramid paper containing 50 percent mica. The samples were heat treated for six hours at 60 C and the direct current and 60 Hz alternating current breakdown voltages of both dry and impregnated samples were obtained in a temperature range of 20 to 250 C. The samples were also characterized in terms of their dielectric constant, dielectric loss, and conductivity over this temperature range with an electrical stress of 60 Hz, 50 V/mil present. Additional measurements are underway to determine the volume resistivity, thermal shrinkage, and weight loss of the materials. Preliminary data indicate that the heat treatment of the films slightly improves the dielectric properties with no influence on their breakdown behavior. Impregnation of the samples leads to significant increases in both alternating and direct current breakdown strength. The results are discussed and conclusions made concerning their suitability as high temperature capacitor dielectrics.

  12. Bimodal condensation silicone elastomers as dielectric elastomers

    DEFF Research Database (Denmark)

    Yu, Liyun; Madsen, Frederikke Bahrt; Skov, Anne Ladegaard

    Lately, dielectric elastomers (DEs) which consist of an elastomer sandwiched between electrodes on both sides, have gained interest as materials for actuators, generators, and sensors. An ideal elastomer for DE uses is characterized by high extensibility, flexibility and good mechanical fatigue...... elastomers were prepared by mixing different mass ratios (9:1, 8:2, 7:3, 6:4, 5:5, 4:6) between long polydimethylsiloxane (PDMS) chains and short PDMS chains. The resulting elastomers were investigated with respect to their rheology, dielectric properties, tensile strength, electrical breakdown, as well.......Moreover, a series of elastomers with the same mass ratio (7:3) between long and short PDMS chains were made at different humidity (90%, 70%, 50%, 30%, 10%) at 23oC. The dielectric and mechincal properties of the resulting elastomers were shown to depend strongly on the atmospheric humidity level.In addition...

  13. Electron-beam-induced conduction in dielectrics

    Energy Technology Data Exchange (ETDEWEB)

    Acris, F C; Davies, P M; Lewis, T J [University Coll. of North Wales, Bangor (UK). School of Electronic Engineering Science

    1976-03-14

    A model for the enhanced conduction induced in dielectric films under electron bombardment while electrically stressed is discussed. It is assumed that the beam produces a virtual electrode at the end of its range in the dielectric and, as a consequence, the induced conduction is shown to depend on the properties of that part of the dielectric beyond the range of the beam. This model has also been discussed recently by Nunes de Oliviera and Gross. In the present treatment, it is shown how the model permits investigation of beam scattering and carrier generation and recombination processes. Experiments on electron-bombardment-induced conduction of thin (72 to 360 nm) films of anodic tantalum oxide are reported and it is shown that the theoretical model provides a very satisfactory explanation of all features of the results including the apparent threshold energy for enhanced conduction.

  14. Characterization of process-induced damage in Cu/low-k interconnect structure by microscopic infrared spectroscopy with polarized infrared light

    Energy Technology Data Exchange (ETDEWEB)

    Seki, Hirofumi, E-mail: Hirofumi-Seki@trc.toray.co.jp; Hashimoto, Hideki [Toray Research Center, Inc., 3-3-7 Sonoyama, Otsu, Shiga 520-8567 (Japan); Ozaki, Yukihiro [Department of Chemistry, School of Science and Technology, Kwansei Gakuin University, 2-1, Gakuen, Sanda, Hyogo 669-1337 (Japan)

    2016-09-07

    Microscopic Fourier-transform infrared (FT-IR) spectra are measured for a Cu/low-k interconnect structure using polarized IR light for different widths of low-k spaces and Cu lines, and for different heights of Cu lines, on Si substrates. Although the widths of the Cu line and the low-k space are 70 nm each, considerably smaller than the wavelength of the IR light, the FT-IR spectra of the low-k film were obtained for the Cu/low-k interconnect structure. A suitable method was established for measuring the process-induced damage in a low-k film that was not detected by the TEM-EELS (Transmission Electron Microscope-Electron Energy-Loss Spectroscopy) using microscopic IR polarized light. Based on the IR results, it was presumed that the FT-IR spectra mainly reflect the structural changes in the sidewalls of the low-k films for Cu/low-k interconnect structures, and the mechanism of generating process-induced damage involves the generation of Si-OH groups in the low-k film when the Si-CH{sub 3} bonds break during the fabrication processes. The Si-OH groups attract moisture and the OH peak intensity increases. It was concluded that the increase in the OH groups in the low-k film is a sensitive indicator of low-k damage. We achieved the characterization of the process-induced damage that was not detected by the TEM-EELS and speculated that the proposed method is applicable to interconnects with line and space widths of 70 nm/70 nm and on shorter scales of leading edge devices. The location of process-induced damage and its mechanism for the Cu/low-k interconnect structure were revealed via the measurement method.

  15. Vectorial analysis of dielectric photonic crystal VCSEL

    DEFF Research Database (Denmark)

    Chung, Il-Sug; Mørk, Jesper

    2009-01-01

    A new vertical-cavity surface-emitting laser structure employing a dielectric photonic crystal mirror has been suggested and been numerically investigated. The new structure has a smaller threshold gain, a moderate strength of single-transverse-mode operation, a high quality of emission beam free...

  16. Electrical breakdown phenomena of dielectric elastomers

    DEFF Research Database (Denmark)

    Yu, Liyun; Mateiu, Ramona Valentina; Skov, Anne Ladegaard

    2017-01-01

    years. However, optimization with respect to the dielectric permittivity solely may lead to other problematic phenomena such as premature electrical breakdown. In this work, we focus on the chloro propyl functionalized silicone elastomers prepared in Madsen et al[2] and we investigate the electrical...

  17. Defects in codoped NiO with gigantic dielectric response

    Science.gov (United States)

    Wu, Ping; Ligatchev, Valeri; Yu, Zhi Gen; Zheng, Jianwei; Sullivan, Michael B.; Zeng, Yingzhi

    2009-06-01

    We combine first-principles, statistical, and phenomenological methods to investigate the electronic and dielectric properties of NiO and clarify the nature of the gigantic dielectric response in codoped NiO. Unlike previous models which are dependent on grain-boundary effects, our model based on small polaron hopping in homogeneous material predicts the dielectric permittivity (104-5) for heavily Li- and MD -codoped NiO (MD=Ti,Al,Si) . Furthermore, we reproduce the experimental trends in dielectric properties as a function of the dopants nature and their concentrations, as well as the reported activation energies for the relaxation in Li- and Ti-codoped NiO (0.308 eV or 0.153 eV depending on the Fermi-level position). In this study, we demonstrate that small polaron hopping on dopant levels is the dominant mechanism for the gigantic dielectric response in these codoped NiO.

  18. Adjustable threshold-voltage in all-inkjet-printed organic thin film transistor using double-layer dielectric structures

    International Nuclear Information System (INIS)

    Wu, Wen-Jong; Lee, Chang-Hung; Hsu, Chun-Hao; Yang, Shih-Hsien; Lin, Chih-Ting

    2013-01-01

    An all-inkjet-printed organic thin film transistor (OTFT) with a double-layer dielectric structure is proposed and implemented in this study. By using the double-layer structure with different dielectric materials (i.e., polyvinylphenol with poly(vinylidene fluoride-co-hexafluoropropylene)), the threshold-voltage of OTFT can be adjusted. The threshold-voltage shift can be controlled by changing the composition of dielectric layers. That is, an enhancement-mode OTFT can be converted to a depletion-mode OTFT by selectively printing additional dielectric layers to form a high-k/low-k double-layer structure. The printed OTFT has a carrier mobility of 5.0 × 10 −3 cm 2 /V-s. The threshold-voltages of the OTFTs ranged between − 13 V and 10 V. This study demonstrates an additional design parameter for organic electronics manufactured using inkjet printing technology. - Highlights: • A double-layer dielectric organic thin film transistor, OTFT, is implemented. • The threshold voltage of OTFT can be configured by the double dielectric structure. • The composition of the dielectric determines the threshold voltage shift. • The characteristics of OTFTs can be adjusted by double dielectric structures

  19. Dielectric optical antenna thermal emitters and metamaterials

    Science.gov (United States)

    Schuller, Jonathan Aaron

    Optical antennas are critical components in nanophotonics research due to their unparalleled ability to concentrate electromagnetic energy into nanoscale volumes. Researchers typically construct such antennas from wavelength-size metallic structures. However, recent research has begun to exploit the scattering resonances of high-permittivity particles to realize all-dielectric optical antennas, emitters, and metamaterials. In this thesis, we experimentally and theoretically characterize the resonant modes of subwavelength rod-shaped dielectric particles and demonstrate their use in negative index metamaterials and novel infrared light emitters. At mid-infrared frequencies, Silicon Carbide (SiC) is an ideal system for studying the behavior of dielectric optical antennas. At frequencies below the TO phonon resonance, SiC behaves like a dielectric with very large refractive index. Using infrared spectroscopy and analytical Mie calculations we show that individual rod-shaped SiC particles exhibit a multitude of resonant modes. Detailed investigations of these SiC optical antennas reveal a wealth of new physics and applications. We discuss the distinct electromagnetic field profile for each mode, and demonstrate that two of the dielectric-type Mie resonances can be combined in a particle array to form a negative index metamaterial. We further show that these particles can serve as "broadcasting" antennas. Using a custom-built thermal emission microscope we collect emissivity spectra from single SiC particles at elevated temperatures, highlighting their use as subwavelength resonant light emitters. Finally, we derive and verify a variety of general analytical results applicable to all cylindrical dielectric antennas.

  20. Dielectric Optical Antenna Emitters and Metamaterials

    Science.gov (United States)

    Schuller, Jon

    2009-03-01

    Optical antennas are critical components in nanophotonics research due to their unparalleled ability to concentrate electromagnetic energy into nanoscale volumes. Researchers typically construct such antennas from wavelength-size metallic structures. However, recent research has begun to exploit the scattering resonances of high-permittivity particles to realize all-dielectric optical antennas, emitters, and metamaterials. In this talk, we experimentally and theoretically characterize the resonant modes of subwavelength rod-shaped dielectric particles and demonstrate their use in negative index metamaterials and novel infrared light emitters. At mid-infrared frequencies, Silicon Carbide (SiC) is an ideal system for studying the behavior of dielectric optical antennas. At frequencies below the TO phonon resonance, SiC behaves like a dielectric with very large refractive index. Using infrared spectroscopy and analytical Mie calculations we show that individual rod-shaped SiC particles exhibit a multitude of resonant modes. Detailed investigations of these SiC optical antennas reveal a wealth of new physics and applications. We discuss the distinct electromagnetic field profile for each mode, and demonstrate that two of the dielectric-type Mie resonances can be combined in a particle array to form a negative index metamaterial [1]. We further show that these particles can serve as ``broadcasting'' antennas. Using a custom-built thermal emission microscope we collect emissivity spectra from single SiC particles at elevated temperatures, highlighting their use as subwavelength resonant light emitters. Finally, we derive and verify a variety of general analytical results applicable to all cylindrical dielectric antennas and discuss extensions of the demonstrated concepts to different materials systems and frequency regimes. [1] J.A. Schuller, et al., Phys. Rev. Lett. 99, 107401 (2007)

  1. Dielectric materials for use in thin-film capacitors

    Science.gov (United States)

    Carr, H. E.; Foster, W. D.; Fromhold, A. T., Jr.; Harbuck, T. A.

    1969-01-01

    Investigation report presents details of dielectric properties of various metals measured at 300 degrees K for thermally evaporated oxides from 300 to 6000 A in thickness. It is relevant to the medium of integrated circuitry.

  2. Low dielectric constant-based organic field-effect transistors and metal-insulator-semiconductor capacitors

    Science.gov (United States)

    Ukah, Ndubuisi Benjamin

    This thesis describes a study of PFB and pentacene-based organic field-effect transistors (OFET) and metal-insulator-semiconductor (MIS) capacitors with low dielectric constant (k) poly(methyl methacrylate) (PMMA), poly(4-vinyl phenol) (PVP) and cross-linked PVP (c-PVP) gate dielectrics. A physical method -- matrix assisted pulsed laser evaporation (MAPLE) -- of fabricating all-polymer field-effect transistors and MIS capacitors that circumvents inherent polymer dissolution and solvent-selectivity problems, is demonstrated. Pentacene-based OFETs incorporating PMMA and PVP gate dielectrics usually have high operating voltages related to the thickness of the dielectric layer. Reduced PMMA layer thickness (≤ 70 nm) was obtained by dissolving the PMMA in propylene carbonate (PC). The resulting pentacene-based transistors exhibited very low operating voltage (below -3 V), minimal hysteresis in their transfer characteristics, and decent electrical performance. Also low voltage (within -2 V) operation using thin (≤ 80 nm) low-k and hydrophilic PVP and c-PVP dielectric layers obtained via dissolution in high dipole moment and high-k solvents -- PC and dimethyl sulfoxide (DMSO), is demonstrated to be a robust means of achieving improved electrical characteristics and high operational stability in OFETs incorporating PVP and c-PVP dielectrics.

  3. Investigations on Substrate Temperature-Induced Growth Modes of Organic Semiconductors at Dielectric/semiconductor Interface and Their Correlation with Threshold Voltage Stability in Organic Field-Effect Transistors.

    Science.gov (United States)

    Padma, Narayanan; Maheshwari, Priya; Bhattacharya, Debarati; Tokas, Raj B; Sen, Shashwati; Honda, Yoshihide; Basu, Saibal; Pujari, Pradeep Kumar; Rao, T V Chandrasekhar

    2016-02-10

    Influence of substrate temperature on growth modes of copper phthalocyanine (CuPc) thin films at the dielectric/semiconductor interface in organic field effect transistors (OFETs) is investigated. Atomic force microscopy (AFM) imaging at the interface reveals a change from 'layer+island' to "island" growth mode with increasing substrate temperatures, further confirmed by probing the buried interfaces using X-ray reflectivity (XRR) and positron annihilation spectroscopic (PAS) techniques. PAS depth profiling provides insight into the details of molecular ordering while positron lifetime measurements reveal the difference in packing modes of CuPc molecules at the interface. XRR measurements show systematic increase in interface width and electron density correlating well with the change from layer + island to coalesced huge 3D islands at higher substrate temperatures. Study demonstrates the usefulness of XRR and PAS techniques to study growth modes at buried interfaces and reveals the influence of growth modes of semiconductor at the interface on hole and electron trap concentrations individually, thereby affecting hysteresis and threshold voltage stability. Minimum hole trapping is correlated to near layer by layer formation close to the interface at 100 °C and maximum to the island formation with large voids between the grains at 225 °C.

  4. Center for dielectric studies

    Science.gov (United States)

    Cross, L. E.; Newnham, R. E.; Biggers, J. V.

    1984-05-01

    This report focuses upon the parts of the Center program which have drawn most extensively upon Navy funds. In the basic study of polarization processes in high K dielectrics, major progress has been made in understanding the mechanisms in relaxor ferroelectric in the perovskite structure families. A new effort is also being mounted to obtain more precise evaluation of the internal stress effects in fine grained barium titanate. Related to reliability, studies of the effects of induced macro-defects are described, and preparation for the evaluation of space charge by internal potential distribution measurements discussed. To develop new processing methods for very thin dielectric layers, a new type of single barrier layer multilayer is discussed, and work on the thermal evaporation of oriented crystalline antimony sulphur iodide describe.

  5. Dielectric properties of polyethylene

    International Nuclear Information System (INIS)

    Darwish, S.; Riad, A.S.; El-Shabasy, M.

    2005-01-01

    The temperature dependence of dielectric properties in polyethylene was measured in the frequency range from 10 to 105 Hz. The frequency dependence of the complex impedance in the complex plane could be fitted by semicircles. The system could be represented by an equivalent circuit of a bulk resistance in series with parallel surface resistance-capacitance combination. The relaxation time, has been evaluated from experimental results. Results reveal that the temperature dependence, is a thermally activated process

  6. SFG analysis of the molecular structures at the surfaces and buried interfaces of PECVD ultralow-dielectric constant pSiCOH: Reactive ion etching and dielectric recovery

    Science.gov (United States)

    Myers, John N.; Zhang, Xiaoxian; Huang, Huai; Shobha, Hosadurga; Grill, Alfred; Chen, Zhan

    2017-05-01

    Molecular structures at the surface and buried interface of an amorphous ultralow-k pSiCOH dielectric film were quantitatively characterized before and after reactive ion etching (RIE) and subsequent dielectric repair using sum frequency generation (SFG) vibrational spectroscopy and Auger electron spectroscopy. SFG results indicated that RIE treatment of the pSiCOH film resulted in a depletion of ˜66% of the surface methyl groups and changed the orientation of surface methyl groups from ˜47° to ˜40°. After a dielectric recovery process that followed the RIE treatment, the surface molecular structure was dominated by methyl groups with an orientation of ˜55° and the methyl surface coverage at the repaired surface was 271% relative to the pristine surface. Auger depth profiling indicated that the RIE treatment altered the top ˜25 nm of the film and that the dielectric recovery treatment repaired the top ˜9 nm of the film. Both SFG and Auger profiling results indicated that the buried SiCNH/pSiCOH interface was not affected by the RIE or the dielectric recovery process. Beyond characterizing low-k materials, the developed methodology is general and can be used to distinguish and characterize different molecular structures and elemental compositions at the surface, in the bulk, and at the buried interface of many different polymer or organic thin films.

  7. Dielectric lattice gauge theory

    International Nuclear Information System (INIS)

    Mack, G.

    1983-06-01

    Dielectric lattice gauge theory models are introduced. They involve variables PHI(b)epsilong that are attached to the links b = (x+esub(μ),x) of the lattice and take their values in the linear space g which consists of real linear combinations of matrices in the gauge group G. The polar decomposition PHI(b)=U(b)osub(μ)(x) specifies an ordinary lattice gauge field U(b) and a kind of dielectric field epsilonsub(ij)proportionalosub(i)osub(j)sup(*)deltasub(ij). A gauge invariant positive semidefinite kinetic term for the PHI-field is found, and it is shown how to incorporate Wilson fermions in a way which preserves Osterwalder Schrader positivity. Theories with G = SU(2) and without matter fields are studied in some detail. It is proved that confinement holds, in the sense that Wilson loop expectation values show an area law decay, if the Euclidean action has certain qualitative features which imply that PHI = 0 (i.e. dielectric field identical 0) is the unique maximum of the action. (orig.)

  8. Dielectric lattice gauge theory

    International Nuclear Information System (INIS)

    Mack, G.

    1984-01-01

    Dielectric lattice gauge theory models are introduced. They involve variables PHI(b)element ofG that are attached to the links b = (x+esub(μ), x) of the lattice and take their values in the linear space G which consists of real linear combinations of matrices in the gauge group G. The polar decomposition PHI(b)=U(b)sigmasub(μ)(x) specifies an ordinary lattice gauge field U(b) and a kind of dielectric field epsilonsub(ij)proportional sigmasub(i)sigmasub(j)sup(*)deltasub(ij). A gauge invariant positive semidefinite kinetic term for the PHI-field is found, and it is shown how to incorporate Wilson fermions in a way which preserves Osterwalder-Schrader positivity. Theories with G = SU(2) and without matter fields are studied in some detail. It is proved that confinement holds, in the sense that Wilson-loop expectation values show an area law decay, if the euclidean action has certain qualitative features which imply that PHI=0 (i.e. dielectric field identical 0) is the unique maximum of the action. (orig.)

  9. Clean solutions to the incoming wafer quality impact on lithography process yield limits in a dynamic copper/low-k research and development environment

    Science.gov (United States)

    Lysaght, Patrick S.; Ybarra, Israel; Sax, Harry; Gupta, Gaurav; West, Michael; Doros, Theodore G.; Beach, James V.; Mello, Jim

    2000-06-01

    The continued growth of the semiconductor manufacturing industry has been due, in large part, to improved lithographic resolution and overlay across increasingly larger chip areas. Optical lithography continues to be the mainstream technology for the industry with extensions of optical lithography being employed to support 180 nm product and process development. While the industry momentum is behind optical extensions to 130 nm, the key challenge will be maintaining an adequate and affordable process latitude (depth of focus/exposure window) necessary for 10% post-etch critical dimension (CD) control. If the full potential of optical lithography is to be exploited, the current lithographic systems can not be compromised by incoming wafer quality. Impurity specifications of novel Low-k dielectric materials, plating solutions, chemical-mechanical planarization (CMP) slurries, and chemical vapor deposition (CVD) precursors are not well understood and more stringent control measures will be required to meet defect density targets as identified in the National Technology Roadmap for Semiconductors (NTRS). This paper identifies several specific poor quality wafer issues that have been effectively addressed as a result of the introduction of a set of flexible and reliable wafer back surface clean processes developed on the SEZ Spin-Processor 203 configured for processing of 200 mm diameter wafers. Patterned wafers have been back surface etched by means of a novel spin process contamination elimination (SpCE) technique with the wafer suspended by a dynamic nitrogen (N2) flow, device side down, via the Bernoulli effect. Figure 1 illustrates the wafer-chuck orientation within the process chamber during back side etch processing. This paper addresses a number of direct and immediate benefits to the MicraScan IIITM deep-ultraviolet (DUV) step-and-scan system at SEMATECH. These enhancements have resulted from the resolution of three significant problems: (1) back surface

  10. Direct transitions from high-K isomers to low-K bands -- {gamma} softness or coriolis coupling

    Energy Technology Data Exchange (ETDEWEB)

    Shimizu, Yoshifumi R.; Narimatsu, Kanako; Ohtsubo, Shin-Ichi [Kyushu Univ., Fukuoka (Japan)] [and others

    1996-12-31

    Recent measurements of direct transitions from high-K isomers to low-K bands reveal severe break-down of the K-selection rule and pose the problem of how to understand the mechanism of such K-violation. The authors recent systematic calculations by using a simple {gamma}-tunneling model reproduced many of the observed hindrances, indicating the importance of the {gamma} softness. However, there are some data which cannot be explained in terms of the {gamma}-degree of freedom. In this talk, the authors also discuss the results of conventional Coriolis coupling calculations, which is considered to be another important mechanism.

  11. Steering Electromagnetic Fields in MRI: Investigating Radiofrequency Field Interactions with Endogenous and External Dielectric Materials for Improved Coil Performance at High Field

    Science.gov (United States)

    Vaidya, Manushka

    Although 1.5 and 3 Tesla (T) magnetic resonance (MR) systems remain the clinical standard, the number of 7 T MR systems has increased over the past decade because of the promise of higher signal-to-noise ratio (SNR), which can translate to images with higher resolution, improved image quality and faster acquisition times. However, there are a number of technical challenges that have prevented exploiting the full potential of ultra-high field (≥ 7 T) MR imaging (MRI), such as the inhomogeneous distribution of the radiofrequency (RF) electromagnetic field and specific energy absorption rate (SAR), which can compromise image quality and patient safety. To better understand the origin of these issues, we first investigated the dependence of the spatial distribution of the magnetic field associated with a surface RF coil on the operating frequency and electrical properties of the sample. Our results demonstrated that the asymmetries between the transmit (B1+) and receive (B 1-) circularly polarized components of the magnetic field, which are in part responsible for RF inhomogeneity, depend on the electric conductivity of the sample. On the other hand, when sample conductivity is low, a high relative permittivity can result in an inhomogeneous RF field distribution, due to significant constructive and destructive interference patterns between forward and reflected propagating magnetic field within the sample. We then investigated the use of high permittivity materials (HPMs) as a method to alter the field distribution and improve transmit and receive coil performance in MRI. We showed that HPM placed at a distance from an RF loop coil can passively shape the field within the sample. Our results showed improvement in transmit and receive sensitivity overlap, extension of coil field-of-view, and enhancement in transmit/receive efficiency. We demonstrated the utility of this concept by employing HPM to improve performance of an existing commercial head coil for the

  12. Investigation of amorphous RuMoC alloy films as a seedless diffusion barrier for Cu/p-SiOC:H ultralow-k dielectric integration

    Energy Technology Data Exchange (ETDEWEB)

    Jiao, Guohua [Shenzhen Institutes of Advanced Technology Chinese Academy of Sciences, Shenzhen (China); The Chinese University of Hong Kong, Shatin, Hong Kong (China); Liu, Bo [Sichuan University, Key Laboratory of Radiation Physics and Technology of Ministry of Education, Institute of Nuclear Science and Technology, Chengdu (China); Li, Qiran [CNRS-Universite Paris Sud UMR 8622, Institut d' Electronique Fondamentale, Orsay (France)

    2015-08-15

    Ultrathin RuMoC amorphous films prepared by magnetron co-sputtering with Ru and MoC targets in a sandwiched scheme Si/p-SiOC:H/RuMoC/Cu were investigated as barrier in copper metallization. The evolution of final microstructure of RuMoC alloy films show sensitive correlation with the content of doped Mo and C elements and can be easily controlled by adjusting the sputtering power of the MoC target. There was no signal of interdiffusion between the Cu and SiOC:H layer in the sample of Cu/RuMoC/p-SiOC:H/Si, even annealing up to 500 C. Very weak signal of oxygen have been confirmed in the RuMoC barrier layer both as-deposited and after being annealed, and a good performance on preventing oxygen diffusion has been proved. Leakage current and resistivity evaluations also reveal the excellent thermal reliability of this Si/p-SiOC:H/RuMoC/Cu film stack at the temperatures up to 500 C, indicating its potential application in the advanced barrierless Cu metallization. (orig.)

  13. Dielectric properties of lunar surface

    Science.gov (United States)

    Yushkova, O. V.; Kibardina, I. N.

    2017-03-01

    Measurements of the dielectric characteristics of lunar soil samples are analyzed in the context of dielectric theory. It has been shown that the real component of the dielectric permittivity and the loss tangent of rocks greatly depend on the frequency of the interacting electromagnetic field and the soil temperature. It follows from the analysis that one should take into account diurnal variations in the lunar surface temperature when interpreting the radar-sounding results, especially for the gigahertz radio range.

  14. Electrical response of relaxing dielectrics compressed by arbitrary stress pulses

    International Nuclear Information System (INIS)

    Lysne, P.C.

    1983-01-01

    The theoretical problem of the electric response of biased dielectrics and piezoelectrics subjected to planar stress pulse loading is considered. The materials are taken to exhibit dielectric relaxation in the sense that changes in the polarization induced by electric fields do not occur instantaneously with changes in the fields. While this paper considers arbitrary stress pulse loading of the specimen, examples that are amenable to projectile impact techniques are considered in detail. They are shock reverberation, thin pulse, and ramp loading experiments. It is anticipated that these experiments will play a role in investigations of dielectric relaxation caused by shock induced damage in insulators

  15. Test plan for prototype dielectric permittivity sensor

    International Nuclear Information System (INIS)

    Pfeifer, M.C.

    1993-07-01

    The digface characterization project funded by the Buried Waste Integrated Demonstration (BWID) is designed to test a new method of monitoring hazardous conditions during the remediation at waste sites. Often on a large scale, the exact cause of each anomaly is difficult to determine and ambiguities remain in the characterization of a site. The digface characterization concept is designed to alleviate some of this uncertainty by creating systems that monitor small volumes of soil and detect anomalous areas during remediation before they are encountered. The goal of the digface characterization demonstration is to detect changes in the physical properties from one volume to another and relate these changes in physical properties to changes in the level of contamination. Dielectric permittivity mapping is a method that might prove useful in digface characterization. In this project, the role of a dielectric permittivity monitoring device is under investigation. This project addresses two issues: what are the optimal means of mapping dielectric permittivity contrasts and what types of targets can be detected using dielectric permittivity mapping

  16. Oblique surface waves at an interface between a metal-dielectric superlattice and an isotropic dielectric

    International Nuclear Information System (INIS)

    Vuković, Slobodan M; Miret, Juan J; Zapata-Rodriguez, Carlos J; Jakšić, Zoran

    2012-01-01

    We investigate the existence and dispersion characteristics of surface waves that propagate at an interface between a metal-dielectric superlattice and an isotropic dielectric. Within the long-wavelength limit, when the effective-medium (EM) approximation is valid, the superlattice behaves like a uniaxial plasmonic crystal with the main optical axes perpendicular to the metal-dielectric interfaces. We demonstrate that if such a semi-infinite plasmonic crystal is cut normally to the layer interfaces and brought into contact with a semi-infinite dielectric, a new type of surface mode can appear. Such modes can propagate obliquely to the optical axes if favorable conditions regarding the thickness of the layers and the dielectric permittivities of the constituent materials are met. We show that losses within the metallic layers can be substantially reduced by making the layers sufficiently thin. At the same time, a dramatic enlargement of the range of angles for oblique propagation of the new surface modes is observed. This can lead, however, to field non-locality and consequently to failure of the EM approximation.

  17. Slots in dielectric image line as mode launchers and circuit elements

    Science.gov (United States)

    Solbach, K.

    1981-01-01

    A planar resonator model is used to investigate slots in the ground plane of dielectric image lines. An equivalent circuit representation of the slot discontinuity is obtained, and the launching efficiency of the slot as a mode launcher is analyzed. Slots are also shown to be useful in the realization of dielectric image line array antennas. It is found that the slot discontinuity can be shown as a T-junction of the dielectric image line and a metal waveguide. The launching efficiency is found to increase with the dielectric constant of the dielectric image line, exhibiting a maximum value for guides whose height is slightly less than half a wavelength in the dielectric medium. The measured launching efficiencies of low permittivity dielectric image lines are found to be in good agreement with calculated values

  18. Electromagnetically induced transparency with wide band in all-dielectric microstructure based on Mie resonances

    International Nuclear Information System (INIS)

    Zhu, Lei; Dong, Liang

    2014-01-01

    We numerically demonstrate that a broadband electromagnetically induced transparency–like (EIT-like) effect can be achieved in an all-dielectric microstructure consisting of a dielectric bar and six dielectric bricks. With proper excitations, the dielectric bar and bricks serve as bright and dark elements via the Mie electric and magnetic resonances, respectively. In particular, the mutual couplings between the Mie electric and magnetic resonances induce a broad transparency window. The nature of resonances of the broadband EIT-like effect in an all-dielectric microstructure is investigated by numerical simulation and a coupled oscillator model. Results reveal that significant enhancement of coupling interactions between dielectric resonators leads to a broadband EIT-like effect. Such a dielectric EIT-like structure is promising for future applications in nonlinear optics, slow light devices, and filters. (paper)

  19. The Dielectric Behavior of Cyano-Substituted Poly imides

    International Nuclear Information System (INIS)

    Elshazly, E.S.; Abdelrahman, A.A.M.; Elmasry, M.A.A.

    2013-01-01

    A number of amorphous poly imides containing polar functional groups, cyano group, have been synthesized and investigated for potential use as high temperature piezoelectric sensors. The piezoelectric constants are related to the polarization. The remanent polarization and hence piezoelectric response of a material is determined by dielectric relaxation strength which is the difference in dielectric constant at the glass transition temperature vicinity. The intent of this work is to clarify the mechanism and key components required for developing piezoelectricity in amorphous polymers and further to apply this understanding in designing a unique high temperature piezoelectric polyimide. In this paper, experimental investigations of dielectric constant of piezoelectric cyano -substituted poly imides have been tested as a function of temperature to measure the dielectric relaxation strength in the glass transition temperature region.

  20. Breakdown of coupling dielectrics for Si microstrip detectors

    International Nuclear Information System (INIS)

    Candelori, A.; Paccagnella, A.; Padova Univ.; Saglimbeni, G.

    1999-01-01

    Double-layer coupling dielectrics for AC-coupled Si microstrip detectors have been electrically characterized in order to determine their performance in a radiation-harsh environment, with a focus on the dielectric breakdown. Two different dielectric technologies have been investigated: SiO 2 /TEOS and SiO 2 /Si 3 N 4 . Dielectrics have been tested by using a negative gate voltage ramp of 0.2 MV/(cm·s). The metal/insulator/Si I-V characteristics show different behaviours depending on the technology. The extrapolated values of the breakdown field for unirradiated devices are significantly higher for SiO 2 /Si 3 N 4 dielectrics, but the data dispersion is lower for SiO 2 /TEOS devices. No significant variation of the breakdown field has been measured after a 10 Mrad (Si) γ irradiation for SiO 2 /Si 3 N 4 dielectrics. Finally, the SiO 2 /Si 3 N 4 DC conduction is enhanced if a positive gate voltage ramp is applied with respect to the negative one, due to the asymmetric conduction of the double-layer dielectric

  1. Boron nitride as two dimensional dielectric: Reliability and dielectric breakdown

    Energy Technology Data Exchange (ETDEWEB)

    Ji, Yanfeng; Pan, Chengbin; Hui, Fei; Shi, Yuanyuan; Lanza, Mario, E-mail: mlanza@suda.edu.cn [Institute of Functional Nano and Soft Materials, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, 199 Ren-Ai Road, Suzhou 215123 (China); Zhang, Meiyun; Long, Shibing [Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 (China); Lian, Xiaojuan; Miao, Feng [National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093 (China); Larcher, Luca [DISMI, Università di Modena e Reggio Emilia, 42122 Reggio Emilia (Italy); Wu, Ernest [IBM Research Division, Essex Junction, Vermont 05452 (United States)

    2016-01-04

    Boron Nitride (BN) is a two dimensional insulator with excellent chemical, thermal, mechanical, and optical properties, which make it especially attractive for logic device applications. Nevertheless, its insulating properties and reliability as a dielectric material have never been analyzed in-depth. Here, we present the first thorough characterization of BN as dielectric film using nanoscale and device level experiments complementing with theoretical study. Our results reveal that BN is extremely stable against voltage stress, and it does not show the reliability problems related to conventional dielectrics like HfO{sub 2}, such as charge trapping and detrapping, stress induced leakage current, and untimely dielectric breakdown. Moreover, we observe a unique layer-by-layer dielectric breakdown, both at the nanoscale and device level. These findings may be of interest for many materials scientists and could open a new pathway towards two dimensional logic device applications.

  2. Dielectric Properties Of Nanoferrites

    International Nuclear Information System (INIS)

    Jankov, Stevan B.; Cvejic, Zeljka N.; Rakic, Srdjan; Srdic, Vladimir

    2007-01-01

    Dielectric properties: permittivity, loss factor, tan delta and ionic conductivity of nanostructured ferrites have been measured. Samples used were nickel, zinc and yttrium doped ferrites mixed in various ratios. The synthesis has been performed using precipitation method and obtained powders were pressed in pellets under varying pressure. X-ray diffractography approach for the refinement of structure and microstructural analysis has been performed. All parameters have been measured in 1 Hz to 100 kHz frequency range and 30 deg. C to 80 deg. C temperature range. Significant improvements in permittivity, loss factor and ionic conductivity comparing to bulk samples have been observed

  3. Dielectric materials and electrostatics

    CERN Document Server

    Gallot-Lavalle, Olivier

    2013-01-01

    An introduction to the physics of electrical insulation, this book presents the physical foundations of this discipline and the resulting applications. It is structured in two parts. The first part presents a mathematical and intuitive approach to dielectrics; various concepts, including polarization, induction, forces and losses are discussed. The second part provides readers with the keys to understanding the physics of solid, liquid and gas insulation. It comprises a phenomenological description of discharges in gas and its resulting applications. Finally, the main electrical properties

  4. The Theory for the Dielectric Slab Waveguide with Complex Refractive Index Applied to GaAs Lasers

    DEFF Research Database (Denmark)

    Buus, Jens

    1977-01-01

    In this paper we investigate the homogeneous dielectric slab waveguide in the case of complex dielectric constants. A method for calculating the field distribution in a dielectric waveguide with an arbitrary symmetrical variation in the refractive index is developed, and some of the results are p...

  5. Dielectric response of planar relativistic quantum plasmas

    International Nuclear Information System (INIS)

    Bardos, D.C.; Frankel, N.E.

    1991-01-01

    The dielectric response of planar relativistic charged particle-antiparticle plasmas is investigated, treating Fermi and Bose plasmas. The conductivity tensor in each case is derived in the self-consistent Random Phase Approximation. The tensors are then evaluated at zero temperature for the case of no external fields, leading to explicit dispersion relations for the electrodynamic modes of the plasma. The longitudinal and transverse modes are in general coupled for plasma layers. This coupling vanishes, however, in the zero field case, allowing 'effective' longitudinal and transverse dielectric functions to be defined in terms of components of the conductivity tensor. Solutions to the longitudinal mode equations (i.e. plasmon modes) are exhibited, while purely transverse modes are found not to exist. In the case of the Bose plasma the screening of a test charge is investigated in detail. 41 refs., 1 fig

  6. Generalized dielectric permittivity tensor

    International Nuclear Information System (INIS)

    Borzdov, G.N.; Barkovskii, L.M.; Fedorov, F.I.

    1986-01-01

    The authors deal with the question of what is to be done with the formalism of the electrodynamics of dispersive media based on the introduction of dielectric-permittivity tensors for purely harmonic fields when Voigt waves and waves of more general form exist. An attempt is made to broaden and generalize the formalism to take into account dispersion of waves of the given type. In dispersive media, the polarization, magnetization, and conduction current-density vectors of point and time are determined by the values of the electromagnetic field vectors in the vicinity of this point (spatial dispersion) in the preceding instants of time (time dispersion). The dielectric-permittivity tensor and other tensors of electrodynamic parameters of the medium are introduced in terms of a set of evolution operators and not the set of harmonic function. It is noted that a magnetic-permeability tensor and an elastic-modulus tensor may be introduced for an acoustic field in dispersive anisotropic media with coupling equations of general form

  7. Wobbling Motion in the Multi-Bands Crossing Region: Dynamical Coupling Mode Between High- and Low-K States

    International Nuclear Information System (INIS)

    Oi, M.; Ansari, A.; Horibata, T.; Onishi, N.; Walker, P.M.

    2001-01-01

    We analyze a mechanism of coupling of high- and low-K bands in terms of a dynamical treatment for nuclear rotations, i. e., wobbling motion. The wobbling states are produced through the Generator Coordinate Method after Angular Momentum Projection (GCM-after-AMP), in which the intrinsic states are constructed through fully self consistent calculations by the 2d-cranked (or tilted-axis-cranked) HFB method. In particular, the phenomena of ''signature inversion'' and ''signature splitting'' in the t-band (tilted rotational band) are explained in terms of the wobbling model. Our calculations will be compared with new data for in-band E2 transition rates in 182 0s, which may shed light on the mechanism of the anomalous K = 25 isomer decay, directly to the yrast band. (author)

  8. An Approach for Measuring the Dielectric Strength of OLED Materials

    Directory of Open Access Journals (Sweden)

    Sujith Sudheendran Swayamprabha

    2018-06-01

    Full Text Available Surface roughness of electrodes plays a key role in the dielectric breakdown of thin-film organic devices. The rate of breakdown will increase when there are stochastic sharp spikes on the surface of electrodes. Additionally, surface having spiking morphology makes the determination of dielectric strength very challenging, specifically when the layer is relatively thin. We demonstrate here a new approach to investigate the dielectric strength of organic thin films for organic light-emitting diodes (OLEDs. The thin films were deposited on a substrate using physical vapor deposition (PVD under high vacuum. The device architectures used were glass substrate/indium tin oxide (ITO/organic material/aluminum (Al and glass substrate/Al/organic material/Al. The dielectric strength of the OLED materials was evaluated from the measured breakdown voltage and layer thickness.

  9. Dielectric elastomer actuators used for pneumatic valve technology

    International Nuclear Information System (INIS)

    Giousouf, Metin; Kovacs, Gabor

    2013-01-01

    Dielectric elastomer actuators have been investigated for applications in the field of pneumatic automation technology. We have developed different valve designs with stacked dielectric elastomer actuators and with integrated high voltage converters. The actuators were made using VHB-4910 material and a stacker machine for automated fabrication of the cylindrical actuators. Typical characteristics of pneumatic valves such as flow rate, power consumption and dynamic behaviour are presented. For valve construction the force and stroke parameters of the dielectric elastomer actuator have been measured. Further, benefits for valve applications using dielectric elastomers are shown as well as their potential operational area. Finally, challenges are discussed that are relevant for the use of elastomer actuators in valves for industrial applications. (paper)

  10. UV response on dielectric properties of nano nematic liquid crystal

    Directory of Open Access Journals (Sweden)

    Kamal Kumar Pandey

    2018-03-01

    Full Text Available In this work, we investigate the effect of UV light irradiation on the dielectric parameters of nematic liquid crystal (5CB and ZnO nanoparticles dispersed liquid crystal. With addition of nanoparticles in nematic LC are promising new materials for a variety of application in energy harvesting, displays and photonics including the liquid crystal laser. To realize many applications, however we optimize the properties of liquid crystal and understand how the UV light irradiation interact the nanoparticles and LC molecules in dispersed/doped LC. The dielectric permittivity and loss factor have discussed the pure nematic LC and dispersed/doped system after, during and before UV light exposure. The dielectric relaxation spectroscopy was carried out in the frequency range 100 Hz–10 MHz in the nematic mesophase range. Keywords: Dielectric permittivity, Relaxation frequency, Nematic liquid crystal, UV light irradiation

  11. First-principles study of dielectric properties of cerium oxide

    International Nuclear Information System (INIS)

    Yamamoto, Takenori; Momida, Hiroyoshi; Hamada, Tomoyuki; Uda, Tsuyoshi; Ohno, Takahisa

    2005-01-01

    We have theoretically investigated the dielectric properties of fluorite CeO 2 as well as hexagonal and cubic Ce 2 O 3 by using first-principles pseudopotentials techniques within the local density approximation. Calculated electronic and lattice dielectric constants of CeO 2 are in good agreement with previous theoretical and experimental results. For Ce 2 O 3 , the hexagonal phase has a lattice dielectric constant comparable to that of CeO 2 , whereas the cubic phase has a much smaller one. We have concluded that the enhancement of the dielectric constant in CeO 2 epitaxially grown on Si is not due to its lattice expansion experimentally observed nor regular formation of oxygen vacancies in CeO 2

  12. Effect of an azo dye (DR1) on the dielectric parameters of a nematic liquid crystal system

    International Nuclear Information System (INIS)

    Ozder, S.; Okutan, M.; Koeysal, O.; Goektas, H.; San, S.E.

    2007-01-01

    The dielectric parameters and relaxation properties of azo dye (DR1) doped E7 and pure E7 liquid crystal (LC) have been investigated in a wide frequency range of 10 k-10 MHz through the dielectric spectroscopy method at room temperature. Dielectric anisotropy (Δε) property of the LC changes from the positive type to negative type and dielectric anisotropy values decrease with doping of DR1. The relaxation frequency f r of E7 and E7/DR1 LC was calculated by means of Cole-Cole plots. Influence of bias voltage on the dielectric parameters has also been investigated

  13. Broadband dielectric spectroscopy of oxidized porous silicon

    International Nuclear Information System (INIS)

    Axelrod, Ekaterina; Urbach, Benayahu; Sa'ar, Amir; Feldman, Yuri

    2006-01-01

    Dielectric measurements accompanied by infrared absorption and photoluminescence (PL) spectroscopy were used to investigate the electrical and optical properties of oxidized porous silicon (PS). As opposed to non-oxidized PS, only high temperature relaxation processes could be resolved for oxidized PS. Two relaxation processes have been observed. The first process is related to dc-conductivity that dominates at high temperatures and low frequencies. After subtraction of dc-conductivity we could analyse a second high-temperature relaxation process that is related to interface polarization induced by charge carriers trapped at the host matrix-pore interfaces. We found that, while the main effect of the oxidation on the PL appears to be a size reduction in the silicon nanocrystals that gives rise to a blue shift of the PL spectrum, its main contribution to the dielectric properties turns out to be blocking of transport channels in the host tissue and activation of hopping conductivity between silicon nanocrystals

  14. Broadband dielectric spectroscopy of oxidized porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Axelrod, Ekaterina [Department of Applied Physics, Hebrew University of Jerusalem, Jerusalem, 91904 (Israel); Urbach, Benayahu [Racah Institute of Physics and the Center for Nanoscience and Nanotechnology, Hebrew University of Jerusalem, Jerusalem, 91904 (Israel); Sa' ar, Amir [Racah Institute of Physics and the Center for Nanoscience and Nanotechnology, Hebrew University of Jerusalem, Jerusalem, 91904 (Israel); Feldman, Yuri [Department of Applied Physics, Hebrew University of Jerusalem, Jerusalem, 91904 (Israel)

    2006-04-07

    Dielectric measurements accompanied by infrared absorption and photoluminescence (PL) spectroscopy were used to investigate the electrical and optical properties of oxidized porous silicon (PS). As opposed to non-oxidized PS, only high temperature relaxation processes could be resolved for oxidized PS. Two relaxation processes have been observed. The first process is related to dc-conductivity that dominates at high temperatures and low frequencies. After subtraction of dc-conductivity we could analyse a second high-temperature relaxation process that is related to interface polarization induced by charge carriers trapped at the host matrix-pore interfaces. We found that, while the main effect of the oxidation on the PL appears to be a size reduction in the silicon nanocrystals that gives rise to a blue shift of the PL spectrum, its main contribution to the dielectric properties turns out to be blocking of transport channels in the host tissue and activation of hopping conductivity between silicon nanocrystals.

  15. Shear and dielectric responses of propylene carbonate, tripropylene glycol, and a mixture of two secondary amides

    DEFF Research Database (Denmark)

    Gainaru, Catalin; Hecksher, Tina; Olsen, Niels Boye

    2012-01-01

    Propylene carbonate and a mixture of two secondary amides, N-ethylformamide and Nethylacetamide, are investigated by means of broadband dielectric and mechanical shear spectroscopy. The similarities between the rheological and the dielectric responses of these liquids and of the previously invest...... in the secondary amides. In addition, the predictions of the shoving model are confirmed for the investigated liquids...

  16. A preliminary study on the dielectric constant of WPC based on some tropical woods

    International Nuclear Information System (INIS)

    Chia, L.H.L.; Chua, P.H.; Hon, Y.S.; Lee, E.

    1986-01-01

    The use of WPC as an important insulating material is studied by determining its dielectric constant. The variation of dielectric constant with moisture content is also investigated. Preliminary results show that all untreated woods studied have a higher dielectric constant than their polymer composites with the exception of Kapur and Keruing. It is therefore postulated that the presence of polymers has led to a decrease in the number of polarizable units. Such a material may be useful commercially. (author)

  17. Laser amplification in excited dielectrics

    DEFF Research Database (Denmark)

    Winkler, Thomas; Haahr-Lillevang, Lasse; Sarpe, Cristian

    2018-01-01

    Wide-bandgap dielectrics such as glasses or water are transparent at visible and infrared wavelengths. This changes when they are exposed to ultrashort and highly intense laser pulses. Different interaction mechanisms lead to the appearance of various transient nonlinear optical phenomena. Using...... these, the optical properties of dielectrics can be controlled from the transparent to the metal-like state. Here we expand this range by a yet unexplored mechanism in excited dielectrics: amplification. In a two-colour pump-probe experiment, we show that a 400nm femtosecond laser pulse is coherently...

  18. A Grand Challenge for CMOS Scaling: Alternate Gate Dielectrics

    Science.gov (United States)

    Wallace, Robert M.

    2001-03-01

    Many materials systems are currently under consideration as potential replacements for SiO2 as the gate dielectric material for sub-0.13 um complementary metal oxide semiconductor (CMOS) technology. The prospect of replacing SiO2 is a formidable task because the alternate gate dielectric must provide many properties that are, at a minimum, comparable to those of SiO2 yet with a much higher permittivity. A systematic examination of the required performance of gate dielectrics suggests that the key properties to consider in the selection an alternative gate dielectric candidate are (a) permittivity, band gap and band alignment to silicon, (b) thermodynamic stability, (c) film morphology, (d) interface quality, (e) compatibility with the current or expected materials to be used in processing for CMOS devices, (f) process compatibility, and (g) reliability. Many dielectrics appear favorable in some of these areas, but very few materials are promising with respect to all of these guidelines. We will review the performance requirements for materials associated with CMOS scaling, the challenges associated with these requirements, and the state-of-the-art in current research for alternate gate dielectrics. The requirements for process integration compatibility are remarkably demanding, and any serious candidates will emerge only through continued, intensive investigation.

  19. Thermodynamics and instability of dielectric elastomer (Conference Presentation)

    Science.gov (United States)

    Liu, Liwu; Liu, Yanju; Leng, Jinsong; Mu, Tong

    2017-04-01

    Dielectric elastomer is a kind of typical soft active material. It can deform obviously when subjected to an external voltage. When a dielectric elastomer with randomly oriented dipoles is subject to an electric field, the dipoles will rotate to and align with the electric field. The polarization of the dielectric elastomer may be saturated when the voltage is high enough. When subjected to a mechanical force, the end-to-end distance of each polymer chain, which has a finite contour length, will approach the finite value, reaching a limiting stretch. On approaching the limiting stretch, the elastomer stiffens steeply. Here, we develop a thermodynamic constitutive model of dielectric elastomers undergoing polarization saturation and strain-stiffening, and then investigate the stability (electromechanical stability, snap-through stability) and voltage induced deformation of dielectric elastomers. Analytical solution has been obtained and it reveals the marked influence of the extension limit and polarization saturation limit on its instability. The developed thermodynamic constitutive model and simulation results would be helpful in future to the research of dielectric elastomer based high-performance transducers.

  20. Evaluation of Dielectric-Barrier-Discharge Actuator Substrate Materials

    Science.gov (United States)

    Wilkinson, Stephen P.; Siochi, Emilie J.; Sauti, Godfrey; Xu, Tian-Bing; Meador, Mary Ann; Guo, Haiquan

    2014-01-01

    A key, enabling element of a dielectric barrier discharge (DBD) actuator is the dielectric substrate material. While various investigators have studied the performance of different homogeneous materials, most often in the context of related DBD experiments, fundamental studies focused solely on the dielectric materials have received less attention. The purpose of this study was to conduct an experimental assessment of the body-force-generating performance of a wide range of dielectric materials in search of opportunities to improve DBD actuator performance. Materials studied included commonly available plastics and glasses as well as a custom-fabricated polyimide aerogel. Diagnostics included static induced thrust, electrical circuit parameters for 2D surface discharges and 1D volume discharges, and dielectric material properties. Lumped-parameter circuit simulations for the 1D case were conducted showing good correspondence to experimental data provided that stray capacitances are included. The effect of atmospheric humidity on DBD performance was studied showing a large influence on thrust. The main conclusion is that for homogeneous, dielectric materials at forcing voltages less than that required for streamer formation, the material chemical composition appears to have no effect on body force generation when actuator impedance is properly accounted for.

  1. Dielectric inspection of erythrocyte morphology

    International Nuclear Information System (INIS)

    Hayashi, Yoshihito; Oshige, Ikuya; Katsumoto, Yoichi; Omori, Shinji; Yasuda, Akio; Asami, Koji

    2008-01-01

    We performed a systematic study of the sensitivity of dielectric spectroscopy to erythrocyte morphology. Namely, rabbit erythrocytes of four different shapes were prepared by precisely controlling the pH of the suspending medium, and their complex permittivities over the frequency range from 0.1 to 110 MHz were measured and analyzed. Their quantitative analysis shows that the characteristic frequency and the broadening parameter of the dielectric relaxation of interfacial polarization are highly specific to the erythrocyte shape, while they are insensitive to the cell volume fraction. Therefore, these two dielectric parameters can be used to differentiate erythrocytes of different shapes, if dielectric spectroscopy is applied to flow-cytometric inspection of single blood cells. In addition, we revealed the applicability and limitations of the analytical theory of interfacial polarization to explain the experimental permittivities of non-spherical erythrocytes

  2. Dielectric inspection of erythrocyte morphology

    Energy Technology Data Exchange (ETDEWEB)

    Hayashi, Yoshihito; Oshige, Ikuya; Katsumoto, Yoichi; Omori, Shinji; Yasuda, Akio [Life Science Laboratory, Materials Laboratories, Sony Corporation, Sony Bioinformatics Center, Tokyo Medical and Dental University, Bunkyo-ku, Tokyo 113-8510 (Japan); Asami, Koji [Laboratory of Molecular Aggregation Analysis, Division of Multidisciplinary Chemistry, Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan)], E-mail: Yoshihito.Hayashi@jp.sony.com

    2008-05-21

    We performed a systematic study of the sensitivity of dielectric spectroscopy to erythrocyte morphology. Namely, rabbit erythrocytes of four different shapes were prepared by precisely controlling the pH of the suspending medium, and their complex permittivities over the frequency range from 0.1 to 110 MHz were measured and analyzed. Their quantitative analysis shows that the characteristic frequency and the broadening parameter of the dielectric relaxation of interfacial polarization are highly specific to the erythrocyte shape, while they are insensitive to the cell volume fraction. Therefore, these two dielectric parameters can be used to differentiate erythrocytes of different shapes, if dielectric spectroscopy is applied to flow-cytometric inspection of single blood cells. In addition, we revealed the applicability and limitations of the analytical theory of interfacial polarization to explain the experimental permittivities of non-spherical erythrocytes.

  3. Silicone-based Dielectric Elastomers

    DEFF Research Database (Denmark)

    Skov, Anne Ladegaard

    Efficient conversion of energy from one form to another (transduction) is an important topic in our daily day, and it is a necessity in moving away from the fossil based society. Dielectric elastomers hold great promise as soft transducers, since they are compliant and light-weight amongst many...... energy efficient solutions are highly sought. These properties allow for interesting products ranging very broadly, e.g. from eye implants over artificial skins over soft robotics to huge wave energy harvesting plants. All these products utilize the inherent softness and compliance of the dielectric...... elastomer transducers. The subject of this thesis is improvement of properties of silicone-based dielectric elastomers with special focus on design guides towards electrically, mechanically, and electromechanically reliable elastomers. Strategies for improving dielectric elastomer performance are widely...

  4. Interconnect Between a Waveguide and a Dielectric Waveguide Comprising an Impedance Matched Dielectric Lens

    Science.gov (United States)

    Decrossas, Emmanuel (Inventor); Chattopadhyay, Goutam (Inventor); Chahat, Nacer (Inventor); Tang, Adrian J. (Inventor)

    2016-01-01

    A lens for interconnecting a metallic waveguide with a dielectric waveguide is provided. The lens may be coupled a metallic waveguide and a dielectric waveguide, and minimize a signal loss between the metallic waveguide and the dielectric waveguide.

  5. Dielectric properties of ligand-modified gold nanoparticles/SU-8 photopolymer based nanocomposites

    KAUST Repository

    Toor, Anju; So, Hongyun; Pisano, Albert P.

    2017-01-01

    This article reports the enhanced dielectric properties of a photodefinable nanocomposite material containing sub–10 nm coated metal nanoparticles (NPs). The surface morphology of the synthesized dodecanethiol-functionalized gold NPs was characterized using the transmission electron microscopy (TEM). We investigated the particle agglomeration and dispersion during the various stages of the nanocomposite synthesis using TEM. Physical properties such as dielectric permittivity and dielectric loss were measured experimentally. The dependence of dielectric permittivity and loss tangent on particle concentration and frequency was studied. Nanocomposite films showed an approximately three times enhancement in average dielectric constant over the polymer base value and an average dielectric loss of 0.09 at 1 kHz, at a filler loading of 10% w/w.

  6. Dielectric properties of ligand-modified gold nanoparticles/SU-8 photopolymer based nanocomposites

    KAUST Repository

    Toor, Anju

    2017-04-15

    This article reports the enhanced dielectric properties of a photodefinable nanocomposite material containing sub–10 nm coated metal nanoparticles (NPs). The surface morphology of the synthesized dodecanethiol-functionalized gold NPs was characterized using the transmission electron microscopy (TEM). We investigated the particle agglomeration and dispersion during the various stages of the nanocomposite synthesis using TEM. Physical properties such as dielectric permittivity and dielectric loss were measured experimentally. The dependence of dielectric permittivity and loss tangent on particle concentration and frequency was studied. Nanocomposite films showed an approximately three times enhancement in average dielectric constant over the polymer base value and an average dielectric loss of 0.09 at 1 kHz, at a filler loading of 10% w/w.

  7. Thermal Experimental Analysis for Dielectric Characterization of High Density Polyethylene Nanocomposites

    Directory of Open Access Journals (Sweden)

    Ahmed Thabet Mohamed

    2016-01-01

    Full Text Available The importance of nanoparticles in controlling physical properties of polymeric nanocomposite materials leads us to study effects of these nanoparticles on electric and dielectric properties of polymers in industry In this research, the dielectric behaviour of High-Density Polyethylene (HDPE nanocomposites materials that filled with nanoparticles of clay or fumed silica has been investigated at various frequencies (10 Hz-1 kHz and temperatures (20-60°C. Dielectric spectroscopy has been used to characterize ionic conduction, then, the effects of nanoparticles concentration on the dielectric losses and capacitive charge of the new nanocomposites can be stated. Capacitive charge and loss tangent in high density polyethylene nanocomposites are measured by dielectric spectroscopy. Different dielectric behaviour has been observed depending on type and concentration of nanoparticles under variant thermal conditions.

  8. Dielectric Properties of Water in Butter and Water-AOT-Heptane Systems Measured using Terahertz Time-Domain Spectroscopy

    DEFF Research Database (Denmark)

    Møller, Uffe; Folkenberg, Jacob Riis; Jepsen, Peter Uhd

    2010-01-01

    We investigate the dielectric properties of water confined in nanometer-sized inverse micelles in mixtures of water, AOT, and heptane. We show that the dielectric properties of the confined water are dependent on the water pool size and different from those of bulk water. We also discuss...... the dielectric properties of different vegetable oils, lard, and butter, and use these properties to deduce the dielectric properties of water in butter, which are shown to deviate significantly from the dielectric properties of bulk water....

  9. Numerical differentiation methods for the logarithmic derivative technique used in dielectric spectroscopy

    Directory of Open Access Journals (Sweden)

    Henrik Haspel

    2010-06-01

    Full Text Available In dielectric relaxation spectroscopy the conduction contribution often hampers the evaluation of dielectric spectra, especially in the low-frequency regime. In order to overcome this the logarithmic derivative technique could be used, where the calculation of the logarithmic derivative of the real part of the complex permittivity function is needed. Since broadband dielectric measurement provides discrete permittivity function, numerical differentiation has to be used. Applicability of the Savitzky-Golay convolution method in the derivative analysis is examined, and a detailed investigation of the influential parameters (frequency, spectrum resolution, peak shape is presented on synthetic dielectric data.

  10. Plasma nitridation optimization for sub-15 A gate dielectrics

    NARCIS (Netherlands)

    Cubaynes, F.N; Schmitz, Jurriaan; van der Marel, C.; Snijders, J.H.M.; Veloso, A.; Rothschild, A.; Olsen, C.; Date, L.

    The work investigates the impact of plasma nitridation process parameters upon the physical properties and upon the electrical performance of sub-15 A plasma nitrided gate dielectrics. The nitrogen distribution and chemical bonding of ultra-thin plasma nitrided films have been investigated using

  11. Electrical Breakdown and Mechanical Ageing in Dielectric Elastomers

    DEFF Research Database (Denmark)

    Zakaria, Shamsul Bin

    Dielectric elastomers (DE) are used in various applications, such as artificial eye lids, pressure sensors and human motion energy generators. For many applications, one of the major factors that limits the DE performance is premature electrical breakdown. There are many approaches that have been......, the lifetime of elastomer materials needs further investigation. Therefore, in the second strategy, several DE parameters such as Young’s moduli, breakdown strengths and dielectric permittivities of PDMS elastomers filled with hard filler particles were investigated after being subjected to pre...

  12. Ozone production in a dielectric barrier discharge with ultrasonic irradiation

    DEFF Research Database (Denmark)

    Drews, Joanna Maria; Kusano, Yukihiro; Leipold, Frank

    2011-01-01

    Ozone production has been investigated using an atmospheric pressure dielectric barrier discharge in pure O2 at room temperature with and without ultrasonic irradiation. It was driven at a frequency of either 15 kHz or 40 kHz. The ozone production was highly dependent on the O2 flow rate and the ......Ozone production has been investigated using an atmospheric pressure dielectric barrier discharge in pure O2 at room temperature with and without ultrasonic irradiation. It was driven at a frequency of either 15 kHz or 40 kHz. The ozone production was highly dependent on the O2 flow rate...

  13. Effect of B-site substitution of complex ions on dielectric and piezoelectric properties in (Bi1/2Na1/2)TiO3 piezoelectric ceramics

    International Nuclear Information System (INIS)

    Zhou Changrong; Liu Xinyu

    2008-01-01

    The effect of B-site substitution of complex ions on dielectric and piezoelectric properties in (Bi 1/2 Na 1/2 )Ti 1-x (Zn 1/3 Nb 2/3 ) x O 3 (BNTZN-100x) lead-free piezoelectric ceramics was investigated. X-ray diffraction analysis shows that the materials are mono-perovskite phase. The morphotropic phase boundary (MPB) of BNTZN-100x ceramics between rhombohedral and tetragonal locates in the range of 0.5% ≤ x ≤ 2.0%. Temperature dependence of dielectric constant shows that these compounds are relaxor ferroelectrics. The compositions near the MPB exhibit relatively high piezoelectric properties. The piezoelectric constant (d 33 ) and the electromechanical coupling factor (k t ) show the maximum values of d 33 = 97 pC N -1 and k t = 0.46 at x = 2.0% and x = 1.0%, respectively. The BNTZN-100x ceramics are good candidate for use as ultrasonic transducer ceramics for high anisotropic with high k t value and low k p value

  14. Analytical Modeling of Triple-Metal Hetero-Dielectric DG SON TFET

    Science.gov (United States)

    Mahajan, Aman; Dash, Dinesh Kumar; Banerjee, Pritha; Sarkar, Subir Kumar

    2018-02-01

    In this paper, a 2-D analytical model of triple-metal hetero-dielectric DG TFET is presented by combining the concepts of triple material gate engineering and hetero-dielectric engineering. Three metals with different work functions are used as both front- and back gate electrodes to modulate the barrier at source/channel and channel/drain interface. In addition to this, front gate dielectric consists of high-K HfO2 at source end and low-K SiO2 at drain side, whereas back gate dielectric is replaced by air to further improve the ON current of the device. Surface potential and electric field of the proposed device are formulated solving 2-D Poisson's equation and Young's approximation. Based on this electric field expression, tunneling current is obtained by using Kane's model. Several device parameters are varied to examine the behavior of the proposed device. The analytical model is validated with TCAD simulation results for proving the accuracy of our proposed model.

  15. Ultralow-k nanoporous organosilicate dielectric films imprinted with dendritic spheres.

    Science.gov (United States)

    Lee, Byeongdu; Park, Young-Hee; Hwang, Yong-Taek; Oh, Weontae; Yoon, Jinhwan; Ree, Moonhor

    2005-02-01

    Integrated circuits that have improved functionality and speed in a smaller package and that consume less power are desired by the microelectronics industry as well as by end users, to increase device performance and reduce costs. The fabrication of high-performance integrated circuits requires the availability of materials with low or ultralow dielectric constant (low-k: k noise in interconnect conductors, but also minimize power dissipation by reducing the capacitance between the interconnects. Here we describe the preparation of low- and ultralow-k nanoporous organosilicate dielectrics from blends of polymethylsilsesquioxane (PMSSQ) precursor with globular ethyl acrylate-terminated polypropylenimine dendrimers, which act as porogens. These dendrimers are found to mix well with the PMSSQ precursor and after their sacrificial thermal decompositions result in closed, spherical pores of <2.0 nm radius with a very narrow distribution even at high loading. This pore size and distribution are the smallest and the narrowest respectively ever achieved in porous spin-on dielectrics. The method therefore successfully delivers low- and ultralow-k PMSSQ dielectric films that should prove very useful in advanced integrated circuits.

  16. Ultralow frequency bridge for dielectric measurements: applications to electrects

    International Nuclear Information System (INIS)

    Slaets, J.

    1976-01-01

    The problem of U.L.F. (Ultra Low Frequency) dielectric relaxation is investigated. An experimental model is proposed for a bridge covering the range of 10 -3 Hz-10Hz, pased on phase shift measurements originally proposed by Van Turhout and collaborators. The main experimental problems are also analyzed with such U.L.F. measurements and describe its construction and performance. The theoretical correlation between U.L.F. dielectric relaxation and electret thermal stimulated currents is also investigated. A correction for the integral expression given by Turnhout and collaborators, is calculated in particular that takes into account the value of the activation energy in the relation between the two techniques.The correction is important for values of the activation energy below 0,5eV, which occur frequently in dielectric relaxation processes. (Author) [pt

  17. Dielectric studies of Graphene and Glass Fiber reinforced composites

    Science.gov (United States)

    Praveen, D.; Shashi Kumar, M. E.; Pramod, R.

    2018-02-01

    Graphene and E-glass fibres are one of the key materials used currently due to their unique chemical and mechanical properties. Lately graphene has attracted many researchers across academic fraternity as it can yield better properties with lesser reinforcement percentages. The current research emphasizes on the development of graphene-based nanocomposites and its investigation on dielectric applications. The composites were fabricated by adding graphene reinforcements from 1%-3% by weight using conventional Hand-lay process. A thorough investigation was carried out to determine the dielectric behaviour of the nano-composites using impedance analyser according to ASTM standards. The dielectric measurements were carried out in the temperature range of 300K to 400K in a step of 20K. The current research proposes the material for application in capacitor industry as the sample of 2.5% weight fraction showed highest value of K with 14 at 26.1 Hz and 403K.

  18. Microwave measurement and modeling of the dielectric properties of vegetation

    Science.gov (United States)

    Shrestha, Bijay Lal

    Some of the important applications of microwaves in the industrial, scientific and medical sectors include processing and treatment of various materials, and determining their physical properties. The dielectric properties of the materials of interest are paramount irrespective of the applications, hence, a wide range of materials covering food products, building materials, ores and fuels, and biological materials have been investigated for their dielectric properties. However, very few studies have been conducted towards the measurement of dielectric properties of green vegetations, including commercially important plant crops such as alfalfa. Because of its high nutritional value, there is a huge demand for this plant and its processed products in national and international markets, and an investigation into the possibility of applying microwaves to improve both the net yield and quality of the crop can be beneficial. Therefore, a dielectric measurement system based upon the probe reflection technique has been set up to measure dielectric properties of green plants over a frequency range from 300 MHz to 18 GHz, moisture contents from 12%, wet basis to 79%, wet basis, and temperatures from -15°C to 30°C. Dielectric properties of chopped alfalfa were measured with this system over frequency range of 300 MHz to 18 GHz, moisture content from 11.5%, wet basis, to 73%, wet basis, and density over the range from 139 kg m-3 to 716 kg m-3 at 23°C. The system accuracy was found to be +/-6% and +/-10% in measuring the dielectric constant and loss factor respectively. Empirical, semi empirical and theoretical models that require only moisture content and operating frequency were determined to represent the dielectric properties of both leaves and stems of alfalfa at 22°C. The empirical models fitted the measured dielectric data extremely well. The root mean square error (RMSE) and the coefficient of determination (r2) for dielectric constant and loss factor of leaves

  19. Dielectric properties of polymer-particle nanocomposites influenced by electronic nature of filler surfaces.

    Science.gov (United States)

    Siddabattuni, Sasidhar; Schuman, Thomas P; Dogan, Fatih

    2013-03-01

    The interface between the polymer and the particle has a critical role in altering the properties of a composite dielectric. Polymer-ceramic nanocomposites are promising dielectric materials for many electronic and power devices, combining the high dielectric constant of ceramic particles with the high dielectric breakdown strength of a polymer. Self-assembled monolayers of electron rich or electron poor organophosphate coupling groups were applied to affect the filler-polymer interface and investigate the role of this interface on composite behavior. The interface has potential to influence dielectric properties, in particular the leakage and breakdown resistance. The composite films synthesized from the modified filler particles dispersed into an epoxy polymer matrix were analyzed by dielectric spectroscopy, breakdown strength, and leakage current measurements. The data indicate that significant reduction in leakage currents and dielectric losses and improvement in dielectric breakdown strengths resulted when electropositive phenyl, electron-withdrawing functional groups were located at the polymer-particle interface. At a 30 vol % particle concentration, dielectric composite films yielded a maximum energy density of ~8 J·cm(-3) for TiO2-epoxy nanocomposites and ~9.5 J·cm(-3) for BaTiO3-epoxy nanocomposites.

  20. Electrical actuation of dielectric droplets

    International Nuclear Information System (INIS)

    Kumari, N; Bahadur, V; Garimella, S V

    2008-01-01

    Electrical actuation of liquid droplets at the microscale offers promising applications in the fields of microfluidics and lab-on-a-chip devices. Much prior research has targeted the electrical actuation of electrically conducting liquid droplets; however, the actuation of dielectric droplets has remained relatively unexplored, despite the advantages associated with the use of a dielectric droplet. This paper presents modeling and experimental results on the electrical actuation of dielectric droplets between two flat plates. A first-order analytical model, based on the energy-minimization principle, is developed to estimate the electrical actuation force on a dielectric droplet as it moves between two flat plates. Two versions of this analytical model are benchmarked for their suitability and accuracy against a detailed numerical model. The actuation force prediction is then combined with available semi-analytical expressions for predicting the forces opposing droplet motion to develop a model that predicts transient droplet motion under electrical actuation. Electrical actuation of dielectric droplets is experimentally demonstrated by moving transformer oil droplets between two flat plates under the influence of an actuation voltage. Droplet velocities and their dependence on the plate spacing and the applied voltage are experimentally measured and showed reasonable agreement with predictions from the models developed

  1. Dielectric materials electrization by fast electrons

    International Nuclear Information System (INIS)

    Dyrkov, V.A.; Kononov, B.A.

    1990-01-01

    Electrization of short-circuited high-ohmage targets under irradiation by 50-200 keV electrons non-uniformly by volume is investigated both experimentally and theoretically. The obtained data show that effect of space charge field increases monotonically up to stationary state during irradiation. Time constant for space charge accumulation constitutes 1-10 min and has lower value for polymethylmethacrylate as compared with polyethyleneterephthalate and decreases with increase of beam current density. Good agreement of experimental and theoretical results for both materials confirms the validity of main positions of phonomenological model of space charge formation in dielectric materials under fast electron irradiation

  2. Operation regimes of a dielectric laser accelerator

    Science.gov (United States)

    Hanuka, Adi; Schächter, Levi

    2018-04-01

    We investigate three operation regimes in dielectric laser driven accelerators: maximum efficiency, maximum charge, and maximum loaded gradient. We demonstrate, using a self-consistent approach, that loaded gradients of the order of 1 to 6 [GV/m], efficiencies of 20% to 80%, and electrons flux of 1014 [el/s] are feasible, without significant concerns regarding damage threshold fluence. The latter imposes that the total charge per squared wavelength is constant (a total of 106 per μm2). We conceive this configuration as a zero-order design that should be considered for the road map of future accelerators.

  3. Dielectric and Insulating Technology 2005 : Reviews & Forecasts

    Science.gov (United States)

    Okamoto, Tatsuki

    This article reports the state-of-art of TC-DEI ( Technical Committee of Dielectrics and Electrical Insulation of IEEJ) activites. The activiteis are basically based on the activites of 8-10 investigation committees under TC-DEI. Recent activites were categorized into three functions in this article and remarkable activity or trend for each category is mentioned as was done in the article of 2003. Thoese are activities on asset management (AI application and insulation diagnosis), activities on new insulating and functional materials (Nano composite) and activities on new insulation technology for power tansmission (high Tc superconducting cable insulation).

  4. Dielectric and Insulating Technology 2006 : Review & Forecast

    Science.gov (United States)

    Okamoto, Tatsuki

    This article reports the state-of-art of TC-DEI ( Technical Committee of Dielectrics and Electrical Insulation of IEEJ) activites. The activiteis are basically based on the activites of 8-10 investigation committees under TC-DEI. Recent activites were categorized into three functions in this article and remarkable activity or trend for each category is mentioned as was seen in the articles of 2005. Those are activities on asset management (AI application and insulation diagnosis), activities on new insulating and functional materials (Nano composite) and activities on new insulation technology for power tansmission (high Tc superconducting cable insulation).

  5. Improvement in photoconductor film properties by changing dielectric layer structures

    International Nuclear Information System (INIS)

    Kim, S; Oh, K; Lee, Y; Jung, J; Cho, G; Jang, G; Cha, B; Nam, S; Park, J

    2011-01-01

    In recent times, digital X-ray detectors have been actively applied to the medical field; for example, digital radiography offers the potential of improved image quality and provides opportunities for advances in medical image management, computer-aided diagnosis and teleradiology. In this study, two candidate materials (HgI 2 and PbI 2 ) have been employed to study the influence of the dielectric structure on the performance of fabricated X-ray photoconducting films. Parylene C with high permittivity was deposited as a dielectric layer using a parylene deposition system (PDS 2060). The structural and morphological properties of the samples were evaluated field emission scanning electron microscopy and X-ray diffraction. Further, to investigate improvements in the electrical characteristics, a dark current in the dark room and sensitivity to X-ray exposure in the energy range of general radiography diagnosis were measured across the range of the operating voltage. The electric signals varied with the dielectric layer structure of the X-ray films. The PbI 2 film with a bottom dielectric layer showed optimized electric properties. On the other hand, in the case of HgI 2 , the film with a top dielectric layer showed superior electric characteristics. Further, although the sensitivity of the film decreased, the total electrical efficiency of the film improved as a result of the decrease in dark current. When a dielectric layer is deposited on a photoconductor, the properties of the photoconductor, such as hole-electron mobility, should be considered to improve the image quality in digital medical imaging application. In this study, we have thus demonstrated that the use of dielectric layer structures improves the performance of photoconductors.

  6. Interaction between the cardiac rapidly (IKr) and slowly (IKs) activating delayed rectifier potassium channels revealed by low K+-induced hERG endocytic degradation.

    Science.gov (United States)

    Guo, Jun; Wang, Tingzhong; Yang, Tonghua; Xu, Jianmin; Li, Wentao; Fridman, Michael D; Fisher, John T; Zhang, Shetuan

    2011-10-07

    Cardiac repolarization is controlled by the rapidly (I(Kr)) and slowly (I(Ks)) activating delayed rectifier potassium channels. The human ether-a-go-go-related gene (hERG) encodes I(Kr), whereas KCNQ1 and KCNE1 together encode I(Ks). Decreases in I(Kr) or I(Ks) cause long QT syndrome (LQTS), a cardiac disorder with a high risk of sudden death. A reduction in extracellular K(+) concentration ([K(+)](o)) induces LQTS and selectively causes endocytic degradation of mature hERG channels from the plasma membrane. In the present study, we investigated whether I(Ks) compensates for the reduced I(Kr) under low K(+) conditions. Our data show that when hERG and KCNQ1 were expressed separately in human embryonic kidney (HEK) cells, exposure to 0 mM K(+) for 6 h completely eliminated the mature hERG channel expression but had no effect on KCNQ1. When hERG and KCNQ1 were co-expressed, KCNQ1 significantly delayed 0 mM K(+)-induced hERG reduction. Also, hERG degradation led to a significant reduction in KCNQ1 in 0 mM K(+) conditions. An interaction between hERG and KCNQ1 was identified in hERG+KCNQ1-expressing HEK cells. Furthermore, KCNQ1 preferentially co-immunoprecipitated with mature hERG channels that are localized in the plasma membrane. Biophysical and pharmacological analyses indicate that although hERG and KCNQ1 closely interact with each other, they form distinct hERG and KCNQ1 channels. These data extend our understanding of delayed rectifier potassium channel trafficking and regulation, as well as the pathology of LQTS.

  7. The Impact of Dielectric Material and Temperature on Dielectric Charging in RF MEMS Capacitive Switches

    Science.gov (United States)

    Papaioannou, George

    The present work attempts to provide a better insight on the dielectric charging in RF-MEMS capacitive switches that constitutes a key issue limiting parameter of their commercialization. The dependence of the charging process on the nature of dielectric materials widely used in these devices, such as SiO2, Si3N4, AlN, Al2O3, Ta2O5, HfO2, which consist of covalent or ionic bonds and may exhibit piezoelectric properties is discussed taking into account the effect of deposition conditions and resulting material stoichiometry. Another key issue parameter that accelerates the charging and discharging processes by providing enough energy to trapped charges to be released and to dipoles to overcome potential barriers and randomize their orientation is the temperature will be investigated too. Finally, the effect of device structure will be also taken into account.

  8. Materials Fundamentals of Gate Dielectrics

    CERN Document Server

    Demkov, Alexander A

    2006-01-01

    This book presents materials fundamentals of novel gate dielectrics that are being introduced into semiconductor manufacturing to ensure the continuous scalling of the CMOS devices. This is a very fast evolving field of research so we choose to focus on the basic understanding of the structure, thermodunamics, and electronic properties of these materials that determine their performance in device applications. Most of these materials are transition metal oxides. Ironically, the d-orbitals responsible for the high dielectric constant cause sever integration difficulties thus intrinsically limiting high-k dielectrics. Though new in the electronics industry many of these materials are wel known in the field of ceramics, and we describe this unique connection. The complexity of the structure-property relations in TM oxides makes the use of the state of the art first-principles calculations necessary. Several chapters give a detailed description of the modern theory of polarization, and heterojunction band discont...

  9. Laser amplification in excited dielectrics

    Science.gov (United States)

    Winkler, Thomas; Haahr-Lillevang, Lasse; Sarpe, Cristian; Zielinski, Bastian; Götte, Nadine; Senftleben, Arne; Balling, Peter; Baumert, Thomas

    2018-01-01

    Wide-bandgap dielectrics such as glasses or water are transparent at visible and infrared wavelengths. This changes when they are exposed to ultrashort and highly intense laser pulses. Different interaction mechanisms lead to the appearance of various transient nonlinear optical phenomena. Using these, the optical properties of dielectrics can be controlled from the transparent to the metal-like state. Here we expand this range by a yet unexplored mechanism in excited dielectrics: amplification. In a two-colour pump-probe experiment, we show that a 400 nm femtosecond laser pulse is coherently amplified inside an excited sapphire sample on a scale of a few micrometres. Simulations strongly support the proposed two-photon stimulated emission process, which is temporally and spatially controllable. Consequently, we expect applications in all fields that demand strongly localized amplification.

  10. Dielectric function of semiconductor superlattice

    International Nuclear Information System (INIS)

    Qin Guoyi.

    1990-08-01

    We present a calculation of the dielectric function for semiconductor GaAs/Ga 1-x Al x As superlattice taking account of the extension of the electron envelope function and the difference of both the dielectric constant and width between GaAs and Ga 1-x Al x As layers. In the appropriate limits, our results exactly reduce to the well-known results of the quasi two-dimensional electron gas obtained by Lee and Spector and of the period array of two-dimensional electron layers obtained by Das Sarma and Quinn. By means of the dielectric function of the superlattice, the dispersion relation of the collective excitation and the screening property of semiconductor superlattice are discussed and compared with the results of the quasi two-dimensional system and with the results of the periodic array of the two-dimensional electron layers. (author). 4 refs, 3 figs

  11. Capacitive Cells for Dielectric Constant Measurement

    Science.gov (United States)

    Aguilar, Horacio Munguía; Maldonado, Rigoberto Franco

    2015-01-01

    A simple capacitive cell for dielectric constant measurement in liquids is presented. As an illustrative application, the cell is used for measuring the degradation of overheated edible oil through the evaluation of their dielectric constant.

  12. Dielectric behaviour of strontium tartrate single crystals

    Indian Academy of Sciences (India)

    Unknown

    dielectric loss (tan δ) as functions of frequency and temperature. Ion core type ... Since the data on dielectric properties of strontium tartrate trihydrate (STT) do not ... through 'AE' make 15-amp dimmerstat, the rate of heating was maintained ...

  13. The Dielectric Constant of Lubrication Oils

    National Research Council Canada - National Science Library

    Carey, A

    1998-01-01

    The values of the dielectric constant of simple molecules is discussed first, along with the relationship between the dielectric constant and other physical properties such as boiling point, melting...

  14. Geometric phase from dielectric matrix

    International Nuclear Information System (INIS)

    Banerjee, D.

    2005-10-01

    The dielectric property of the anisotropic optical medium is found by considering the polarized photon as two component spinor of spherical harmonics. The Geometric Phase of a polarized photon has been evaluated in two ways: the phase two-form of the dielectric matrix through a twist and the Pancharatnam phase (GP) by changing the angular momentum of the incident polarized photon over a closed triangular path on the extended Poincare sphere. The helicity in connection with the spin angular momentum of the chiral photon plays the key role in developing these phase holonomies. (author)

  15. Charge accumulation in lossy dielectrics: a review

    DEFF Research Database (Denmark)

    Rasmussen, Jørgen Knøster; McAllister, Iain Wilson; Crichton, George C

    1999-01-01

    At present, the phenomenon of charge accumulation in solid dielectrics is under intense experimental study. Using a field theoretical approach, we review the basis for charge accumulation in lossy dielectrics. Thereafter, this macroscopic approach is applied to planar geometries such that the mat......At present, the phenomenon of charge accumulation in solid dielectrics is under intense experimental study. Using a field theoretical approach, we review the basis for charge accumulation in lossy dielectrics. Thereafter, this macroscopic approach is applied to planar geometries...

  16. Hemispherical breathing mode speaker using a dielectric elastomer actuator.

    Science.gov (United States)

    Hosoya, Naoki; Baba, Shun; Maeda, Shingo

    2015-10-01

    Although indoor acoustic characteristics should ideally be assessed by measuring the reverberation time using a point sound source, a regular polyhedron loudspeaker, which has multiple loudspeakers on a chassis, is typically used. However, such a configuration is not a point sound source if the size of the loudspeaker is large relative to the target sound field. This study investigates a small lightweight loudspeaker using a dielectric elastomer actuator vibrating in the breathing mode (the pulsating mode such as the expansion and contraction of a balloon). Acoustic testing with regard to repeatability, sound pressure, vibration mode profiles, and acoustic radiation patterns indicate that dielectric elastomer loudspeakers may be feasible.

  17. Dielectric and baric characteristics of TlS single crystal

    Energy Technology Data Exchange (ETDEWEB)

    Mustafaeva, S.N., E-mail: solmust@gmail.com [Institute of Physics, ANAS, G. Javid prosp. 33, Az 1143 Baku (Azerbaijan); Asadov, M.M. [Institute of Chemical Problems, ANAS, G. Javid prosp. 29, Az 1143 Baku (Azerbaijan); Ismailov, A.A. [Institute of Physics, ANAS, G. Javid prosp. 33, Az 1143 Baku (Azerbaijan)

    2014-11-15

    The investigation of the frequency dependences of the dielectric coefficients and ac-conductivity of the TlS single crystals made it possible to elucidate the nature of dielectric loss and the charge transfer mechanism. Moreover, we evaluated the density and energy spread of localized states near the Fermi level, the average hopping time and the average hopping length. It was shown that the dc-conductivity of the TlS single crystals can be controlled by varying the hydrostatic pressure. This has opened up possibilities for using TlS single crystals as active elements of pressure detectors.

  18. Mixed 2D molecular systems: Mechanic, thermodynamic and dielectric properties

    Energy Technology Data Exchange (ETDEWEB)

    Beno, Juraj [Department of Physics, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Ilkovicova 3, 812 19-SK Bratislava (Slovakia); Weis, Martin [Department of Physics, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Ilkovicova 3, 812 19-SK Bratislava (Slovakia)], E-mail: Martin.Weis@stuba.sk; Dobrocka, Edmund [Department of Physics, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Ilkovicova 3, 812 19-SK Bratislava (Slovakia); Institute of Electrical Engineering, Slovak Academy of Sciences, Dubravska cesta 9, 841 04-SK Bratislava (Slovakia); Hasko, Daniel [International Laser Centre, Ilkovicova 3, 812 19-SK Bratislava (Slovakia)

    2008-08-15

    Study of Langmuir monolayers consisting of stearic acid (SA) and dipalmitoylphosphatidylcholine (DPPC) molecules was done by surface pressure-area isotherms ({pi}-A), the Maxwell displacement current (MDC) measurement, X-ray reflectivity (XRR) and atomic force microscopy (AFM) to investigate the selected mechanic, thermodynamic and dielectric properties based on orientational structure of monolayers. On the base of {pi}-A isotherms analysis we explain the creation of stable structures and found optimal monolayer composition. The dielectric properties represented by MDC generated monolayers were analyzed in terms of excess dipole moment, proposing the effect of dipole-dipole interaction. XRR and AFM results illustrate deposited film structure and molecular ordering.

  19. Light programmable organic transistor memory device based on hybrid dielectric

    Science.gov (United States)

    Ren, Xiaochen; Chan, Paddy K. L.

    2013-09-01

    We have fabricated the transistor memory devices based on SiO2 and polystyrene (PS) hybrid dielectric. The trap states densities with different semiconductors have been investigated and a maximum 160V memory window between programming and erasing is realized. For DNTT based transistor, the trapped electron density is limited by the number of mobile electrons in semiconductor. The charge transport mechanism is verified by light induced Vth shift effect. Furthermore, in order to meet the low operating power requirement of portable electronic devices, we fabricated the organic memory transistor based on AlOx/self-assembly monolayer (SAM)/PS hybrid dielectric, the effective capacitance of hybrid dielectric is 210 nF cm-2 and the transistor can reach saturation state at -3V gate bias. The memory window in transfer I-V curve is around 1V under +/-5V programming and erasing bias.

  20. Metallic and 3D-printed dielectric helical terahertz waveguides.

    Science.gov (United States)

    Vogt, Dominik Walter; Anthony, Jessienta; Leonhardt, Rainer

    2015-12-28

    We investigate guidance of Terahertz (THz) radiation in metallic and 3D-printed dielectric helical waveguides in the frequency range from 0.2 to 1 THz. Our experimental results obtained from THz time-domain spectroscopy (THz-TDS) measurements are in very good agreement with finite-difference time-domain (FDTD) simulations. We observe single-mode, low loss and low dispersive propagation of THz radiation in metallic helical waveguides over a broad bandwidth. The 3D-printed dielectric helical waveguides have substantially extended the bandwidth of a low loss dielectric tube waveguide as observed from the experimental and simulation results. The high flexibility of the helical design allows an easy incorporation into bench top THz devices.

  1. Dynamics of dielectric barrier discharges in coplanar arrangements

    International Nuclear Information System (INIS)

    Gibalov, Valentin I; Pietsch, Gerhard J

    2004-01-01

    The development of a discharge channel in coplanar dielectric barrier arrangements is investigated numerically. Its behaviour in oxygen, like the spatial and temporal distributions of the field strength, charged and neutral particles and energy density, is described in detail. It is found that the streamer development is mainly determined by photoemission. A cathode layer appears near the position where the cathode directed streamer touches the dielectric surface. Secondary electron emission by ion collisions becomes significant and the parameters of the cathode layer are near those of a normal glow discharge. The charge transfer and energy release happen in the conductive channel of the discharge, which appears on the dielectric surface as a result of the cathode streamer development. The field strength in the conductive channel is nearly constant and about 70-100 Td in oxygen and air

  2. The flexoelectric effect associated size dependent pyroelectricity in solid dielectrics

    Energy Technology Data Exchange (ETDEWEB)

    Bai, Gang, E-mail: baigang@njupt.edu.cn [Jiangsu Provincial Engineering Laboratory for RF Integration and Micropackaging and College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023 (China); Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China); Liu, Zhiguo [Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China); Xie, Qiyun; Guo, Yanyan; Li, Wei [Jiangsu Provincial Engineering Laboratory for RF Integration and Micropackaging and College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023 (China); Yan, Xiaobing [College of Electronic and information Engineering, Hebei University, Baoding 071002 (China)

    2015-09-15

    A phenomenological thermodynamic theory is used to investigate the effect of strain gradient on the pyroelectric effect in centrosymmetric dielectric solids. Direct pyroelectricity can exist as external mechanical stress is applied to non-pyroelectric dielectrics with shapes such as truncated pyramids, due to elastic strain gradient induced flexoelectric polarization. Effective pyroelectric coefficient was analyzed in truncated pyramids. It is found to be controlled by size, ambient temperature, stress, and aspect ratio and depends mainly on temperature sensitivity of flexoelectric coefficient (TSFC) and strain gradient of the truncated pyramids dielectric solids. These results show that the pyroelectric property of Ba{sub 0.67}Sr{sub 0.33}TiO{sub 3} above T{sub c} similar to PZT and other lead-based ferroelectrics can be obtained. This feature might widely broaden the selection of materials for infrared detectors with preferable properties.

  3. The flexoelectric effect associated size dependent pyroelectricity in solid dielectrics

    Science.gov (United States)

    Bai, Gang; Liu, Zhiguo; Xie, Qiyun; Guo, Yanyan; Li, Wei; Yan, Xiaobing

    2015-09-01

    A phenomenological thermodynamic theory is used to investigate the effect of strain gradient on the pyroelectric effect in centrosymmetric dielectric solids. Direct pyroelectricity can exist as external mechanical stress is applied to non-pyroelectric dielectrics with shapes such as truncated pyramids, due to elastic strain gradient induced flexoelectric polarization. Effective pyroelectric coefficient was analyzed in truncated pyramids. It is found to be controlled by size, ambient temperature, stress, and aspect ratio and depends mainly on temperature sensitivity of flexoelectric coefficient (TSFC) and strain gradient of the truncated pyramids dielectric solids. These results show that the pyroelectric property of Ba0.67Sr0.33TiO3 above Tc similar to PZT and other lead-based ferroelectrics can be obtained. This feature might widely broaden the selection of materials for infrared detectors with preferable properties.

  4. Optimization of large-scale fabrication of dielectric elastomer transducers

    DEFF Research Database (Denmark)

    Hassouneh, Suzan Sager

    Dielectric elastomers (DEs) have gained substantial ground in many different applications, such as wave energy harvesting, valves and loudspeakers. For DE technology to be commercially viable, it is necessary that any large-scale production operation is nondestructive, efficient and cheap. Danfoss......-strength laminates to perform as monolithic elements. For the front-to-back and front-to-front configurations, conductive elastomers were utilised. One approach involved adding the cheap and conductive filler, exfoliated graphite (EG) to a PDMS matrix to increase dielectric permittivity. The results showed that even...... as conductive adhesives were rejected. Dielectric properties below the percolation threshold were subsequently investigated, in order to conclude the study. In order to avoid destroying the network structure, carbon nanotubes (CNTs) were used as fillers during the preparation of the conductive elastomers...

  5. Silicone elastomers with superior softness and dielectric properties

    DEFF Research Database (Denmark)

    Yu, Liyun; Madsen, Frederikke Bahrt; Zakaria, Shamsul Bin

    Dielectric elastomers (DEs) change their shape and size under a high voltage or reversibly generate a high voltage when deformed. The obstacle of high driving voltages, however, limits the commercial viability of the technology at present. Driving voltage can be lowered by decreasing the Young......’s modulus and increasing the dielectric permittivity of silicone elastomers. One such prominent method of modifying the properties is by adding suitable additives. [1] The major drawbacks for adding solid fillers are agglomeration and increasing stiffness which is often accompanied by the decrease...... were determined by NMR and morphology structures were investigated by optical microscopy. The resulting elastomers were evaluated with respect to their dielectric permittivity, tear and tensile strengths, as well as electrical breakdown.The breakdown strength increased at low amounts of additives...

  6. Resonances and dipole moments in dielectric, magnetic, and magnetodielectric cylinders

    DEFF Research Database (Denmark)

    Dirksen, A.; Arslanagic, Samel; Breinbjerg, Olav

    2011-01-01

    An eigenfunction solution to the problem of plane wave scattering by dielectric, magnetic, and magnetodielectric cylinders is used for a systematic investigation of their resonances. An overview of the resonances with electric and magnetic dipole moments, needed in, e.g., the synthesis...

  7. Optical and microwave dielectric properties of pulsed laser deposited Na{sub 0.5}Bi{sub 0.5}TiO{sub 3} thin film

    Energy Technology Data Exchange (ETDEWEB)

    Joseph, Andrews; Goud, J. Pundareekam; Raju, K. C. James [School of Physics, University of Hyderabad, Hyderabad, Telangana 500046 (India); Emani, Sivanagi Reddy [Advanced Center of Research in High Energy Materials (ACRHEM), School of Physics, University of Hyderabad, Telangana 500046 (India)

    2016-05-23

    Optical properties of pulsed laser deposited (PLD) sodium bismuth titanate thin films (NBT), are investigated at wavelengths of 190-2500 nm. Microwave dielectric properties were investigated using the Split Post Dielectric Resonator (SPDR) technique. At 10 GHz, the NBT films have a dielectric constant of 205 and loss tangent of 0.0373 at room temperature. The optical spectra analysis reveals that NBT thin films have an optical band gap E{sub g}=3.55 eV and it has a dielectric constant of 3.37 at 1000 nm with dielectric loss of 0.299. Hence, NBT is a promising candidate for photonic device applications.

  8. Dielectric waveguide amplifiers and lasers

    NARCIS (Netherlands)

    Pollnau, Markus

    The performance of semiconductor amplifiers and lasers has made them the preferred choice for optical gain on a micro-chip. In the past few years, we have demonstrated that also rare-earth-ion-doped dielectric waveguides show remarkable performance, ranging from a small-signal gain per unit length

  9. Dielectric polarization in random media

    International Nuclear Information System (INIS)

    Ramshaw, J.D.

    1984-01-01

    The theory of dielectric polarization in random media is systematically formulated in terms of response kernels. The primary response kernel K(12) governs the mean dielectric response at the point r 1 to the external electric field at the point r 2 in an infinite system. The inverse of K(12) is denoted by L(12);. it is simpler and more fundamental than K(12) itself. Rigorous expressions are obtained for the effective dielectric constant epsilon( in terms of L(12) and K(12). The latter expression involves the Onsger-Kirkwood function (epsilon(-epsilon 0 (2epsilon(+epsilon 0 )/epsilon 0 epsilon( (where epsilon 0 is an arbitrary reference value), and appears to be new to the random medium context. A wide variety of series representations for epsilon( are generated by means of general perturbation expansions for K(12) and L(12). A discussion is given of certain pitfalls in the theory, most of which are related to the fact that the response kernels are long ranged. It is shown how the dielectric behavior of nonpolar molecular fluids may be treated as a special case of the general theory. The present results for epsilon( apply equally well to other effective phenomenological coefficients of the same generic type, such as thermal and electrical conductivity, magnetic susceptibility, and diffusion coefficients

  10. Improved di-electric composition

    Energy Technology Data Exchange (ETDEWEB)

    Sharp, R C

    1915-03-29

    An improved di-electric composition is disclosed composed of pitch or bitumen which is melted, and to which is added, while molten, a quantity of finely ground or pulverized spent shale, the whole being mixed or stirred to make a homogeneous composition, substantially as described.

  11. Characterization, Microstructure, and Dielectric properties of cubic pyrochlore structural ceramics

    KAUST Repository

    Li, Yangyang

    2013-05-01

    The (BMN) bulk materials were sintered at 1050°C, 1100°C, 1150°C, 1200°C by the conventional ceramic process, and their microstructure and dielectric properties were investigated by Scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman spectroscopy, Transmission electron microscopy (TEM) (including the X-ray energy dispersive spectrometry EDS and high resolution transmission electron microscopy HRTEM) and dielectric impedance analyzer. We systematically investigated the structure, dielectric properties and voltage tunable property of the ceramics prepared at different sintering temperatures. The XRD patterns demonstrated that the synthesized BMN solid solutions had cubic phase pyrochlore-type structure when sintered at 1050°C or higher, and the lattice parameter (a) of the unit cell in BMN solid solution was calculated to be about 10.56Å. The vibrational peaks observed in the Raman spectra of BMN solid solutions also confirmed the cubic phase pyrochlore-type structure of the synthesized BMN. According to the Scanning Electron Microscope (SEM) images, the grain size increased with increasing sintering temperature. Additionally, it was shown that the densities of the BMN ceramic tablets vary with sintering temperature. The calculated theoretical density for the BMN ceramic tablets sintered at different temperatures is about 6.7521 . The density of the respective measured tablets is usually amounting more than 91% and 5 approaching a maximum value of 96.5% for sintering temperature of 1150°C. The microstructure was investigated by using Scanning Transmission Electron Microscope (STEM), X-ray diffraction (XRD). Combined with the results obtained from the STEM and XRD, the impact of sintering temperature on the macroscopic and microscopic structure was discussed. The relative dielectric constant ( ) and dielectric loss ( ) of the BMN solid solutions were measured to be 161-200 and (at room temperature and 100Hz-1MHz), respectively. The BMN solid

  12. The 'emergent scaling' phenomenon and the dielectric properties of random resistor-capacitor networks

    CERN Document Server

    Bouamrane, R

    2003-01-01

    An efficient algorithm, based on the Frank-Lobb reduction scheme, for calculating the equivalent dielectric properties of very large random resistor-capacitor (R-C) networks has been developed. It has been used to investigate the network size and composition dependence of dielectric properties and their statistical variability. The dielectric properties of 256 samples of random networks containing: 512, 2048, 8192 and 32 768 components distributed randomly in the ratios 60% R-40% C, 50% R-50% C and 40% R-60% C have been computed. It has been found that these properties exhibit the anomalous power law dependences on frequency known as the 'universal dielectric response' (UDR). Attention is drawn to the contrast between frequency ranges across which percolation determines dielectric response, where considerable variability is found amongst the samples, and those across which power laws define response where very little variability is found between samples. It is concluded that the power law UDRs are emergent pr...

  13. Direct Effect of Dielectric Surface Energy on Carrier Transport in Organic Field-Effect Transistors.

    Science.gov (United States)

    Zhou, Shujun; Tang, Qingxin; Tian, Hongkun; Zhao, Xiaoli; Tong, Yanhong; Barlow, Stephen; Marder, Seth R; Liu, Yichun

    2018-05-09

    The understanding of the characteristics of gate dielectric that leads to optimized carrier transport remains controversial, and the conventional studies applied organic semiconductor thin films, which introduces the effect of dielectric on the growth of the deposited semiconductor thin films and hence only can explore the indirect effects. Here, we introduce pregrown organic single crystals to eliminate the indirect effect (semiconductor growth) in the conventional studies and to undertake an investigation of the direct effect of dielectric on carrier transport. It is shown that the matching of the polar and dispersive components of surface energy between semiconductor and dielectric is favorable for higher mobility. This new empirical finding may show the direct relationship between dielectric and carrier transport for the optimized mobility of organic field-effect transistors and hence show a promising potential for the development of next-generation high-performance organic electronic devices.

  14. Dielectric constant and laser beam propagation in an underdense collisional plasma: effects of electron temperature

    International Nuclear Information System (INIS)

    Xia Xiongping; Qin Zhen; Xu Bin; Cai Zebin

    2011-01-01

    Dielectric constant and laser beam propagation in an underdense collisional plasma are investigated, using the wave and dielectric function equations, for their dependence on the electron temperature. Simulation results show that, due to the influence of the ponderomotive force there is a nonlinear variation of electron temperature in an underdense collisional plasma, and this leads to a complicated and interesting nonlinear variation of dielectric constant; this nonlinear variation of dielectric constant directly affects the beam propagation and gives rise to laser beam self-focusing in some spatial-temporal regions; in particular, the beam width and the beam intensity present an oscillatory variation in the self-focusing region. The influence of several parameters on the dielectric function and beam self-focusing is discussed.

  15. Reduction of ambipolar characteristics of vertical channel tunneling field-effect transistor by using dielectric sidewall

    International Nuclear Information System (INIS)

    Park, Chun Woong; Cho, Il Hwan; Choi, Woo Young; Lee, Jong-Ho

    2013-01-01

    Ambipolar characteristics of tunneling FETs have been improved by introducing a novel structure which contains dielectric sidewall in the gate region. In the ambipolar operation mode, gate field effect on intrinsic-drain junction region can be reduced with dielectric sidewall. As a result, ambipolar state tunneling probability is decreased at the intrinsic-drain junction. Since the sidewall region is located near the drain region, tunneling probability of source-intrinsic region is not affected by dielectric sidewall. This asymmetric characteristics means only ambipolar current of tunneling FETs can be prohibited by dielectric sidewall. Reduction of ambipolar characteristic of proposed structure has been evaluated with dimension and location of dielectric sidewall. Quantitative analysis of ambipolar characteristics is also investigated with tunneling. (paper)

  16. Electron dynamics and plasma jet formation in a helium atmospheric pressure dielectric barrier discharge jet

    Energy Technology Data Exchange (ETDEWEB)

    Algwari, Q. Th. [Centre for Plasma Physics, School of Maths and Physics, Queen' s University Belfast, University Road, Belfast, Northern Ireland BT7 1NN (United Kingdom); Electronic Department, College of Electronics Engineering, Mosul University, Mosul 41002 (Iraq); O' Connell, D. [Centre for Plasma Physics, School of Maths and Physics, Queen' s University Belfast, University Road, Belfast, Northern Ireland BT7 1NN (United Kingdom); York Plasma Institute, Department of Physics, University of York, York YO10 5DD (United Kingdom)

    2011-09-19

    The excitation dynamics within the main plasma production region and the plasma jets of a kHz atmospheric pressure dielectric barrier discharge (DBD) jet operated in helium was investigated. Within the dielectric tube, the plasma ignites as a streamer-type discharge. Plasma jets are emitted from both the powered and grounded electrode end; their dynamics are compared and contrasted. Ignition of these jets are quite different; the jet emitted from the powered electrode is ignited with a slight time delay to plasma ignition inside the dielectric tube, while breakdown of the jet at the grounded electrode end is from charging of the dielectric and is therefore dependent on plasma production and transport within the dielectric tube. Present streamer theories can explain these dynamics.

  17. Dielectric Properties of Azo Polymers: Effect of the Push-Pull Azo Chromophores

    Directory of Open Access Journals (Sweden)

    Xuan Zhang

    2018-01-01

    Full Text Available The relationship between the structure and the dielectric properties of the azo polymers was studied. Four azo polymers were synthesized through the azo-coupling reaction between the same precursor (PAZ and diazonium salts of 4-aminobenzoic acid ethyl ester, 4-aminobenzonitrile, 4-nitroaniline, and 2-amino-5-nitrothiazole, respectively. The precursor and azo polymers were characterized by 1H NMR, FT-IR, UV-vis, GPC, and DSC. The dielectric constant and dielectric loss of the samples were measured in the frequency range of 100 Hz–200 kHz. Due to the existence of the azo chromophores, the dielectric constant of the azo polymers increases compared with that of the precursor. In addition, the dielectric constant of the azo polymers increases with the increase of the polarity of the azo chromophores. A random copolymer (PAZ-NT-PAZ composed of the azo polymer PAZ-NT and the precursor PAZ was also prepared to investigate the content of the azo chromophores on the dielectric properties of the azo polymers. It showed that the dielectric constant increases with the increase of the azo chromophores. The results show that the dielectric constant of this kind of azo polymers can be controlled by changing the structures and contents of azo chromophores during the preparation process.

  18. A dielectric method for measuring early and late reactions in irradiated human skin

    International Nuclear Information System (INIS)

    Nuutinen, J.; Lahtinen, T.; Turunen, M.; Alanen, E.; Tenhunen, M.; Usenius, T.; Kolle, R.

    1998-01-01

    Background and purpose: To measure the dielectric constant of irradiated human skin in order to test the feasibility of the dielectric measurements in the quantitation of acute and late radiation reactions. Materials and methods: The dielectric constant of irradiated breast skin was measured at an electromagnetic frequency of 300 MHz in 21 patients during postmastectomy radiotherapy. The measurements were performed with an open-ended coaxial line reflection method. The irradiation technique consisted of an anterior photon field to the lymph nodes and a matched electron field to the chest wall using conventional fractionation of five fractions/week to 50 Gy. Fourteen out of the 21 patients were remeasured 2 years later and the skin was palpated for subcutaneous fibrosis. Results: At 5 weeks the dielectric constant had decreased by 31 and 39% for the investigated skin sites of the photon and electron fields, respectively. There was a statistically significant inverse correlation between the mean dielectric constant and the clinical score of erythema. An unexpected finding was a decrease of the dielectric constant of the contralateral healthy skin during radiotherapy. Two years later a statistically significant positive correlation was found between the dielectric constant at the irradiated skin sites and the clinical score of subcutaneous fibrosis. Conclusions: Dielectric measurements non-invasively yield quantitative information concerning radiation-induced skin reactions. (Copyright (c) 1998 Elsevier Science B.V., Amsterdam. All rights reserved.)

  19. Dielectric properties of ligand-modified gold nanoparticle/SU-8 photopolymer based nanocomposites

    Energy Technology Data Exchange (ETDEWEB)

    Toor, Anju, E-mail: atoor@berkeley.edu [Department of Mechanical Engineering, University of California, Berkeley, CA 94720 (United States); So, Hongyun, E-mail: hyso@berkeley.edu [Department of Mechanical Engineering, University of California, Berkeley, CA 94720 (United States); Pisano, Albert P. [Department of Mechanical Engineering, University of California, Berkeley, CA 94720 (United States); Department of Mechanical and Aerospace Engineering, University of California, San Diego, CA 92093 (United States)

    2017-08-31

    Highlights: • Ligand-modified gold NP/SU-8 nanocomposites were synthesized and demonstrated. • Particle agglomeration and dispersion were characterized with different NPs concentration. • Nanocomposites showed higher average dielectric permittivity compared to SU-8 only. • Relatively lower dielectric loss (average 0.09 at 1 kHz) was achieved with 10 % w/w NPs. - Abstract: This article reports the enhanced dielectric properties of a photodefinable polymer nanocomposite material containing sub–10 nm coated metal nanoparticles (NPs). The surface morphology of the synthesized dodecanethiol-functionalized gold NPs was characterized using the transmission electron microscopy (TEM). We investigated the particle agglomeration and dispersion during the various stages of the nanocomposite synthesis using TEM. Physical properties such as dielectric permittivity and dielectric loss were measured experimentally. The dependence of the dielectric permittivity and loss tangent on the particle concentration, and frequency was studied. Nanocomposite films showed an approximately three times enhancement in average dielectric constant over the polymer base value and an average dielectric loss of 0.09 at 1 kHz, at a filler loading of 10% w/w.

  20. Two-phase mixed media dielectric with macro dielectric beads for enhancing resistivity and breakdown strength

    Science.gov (United States)

    Falabella, Steven; Meyer, Glenn A; Tang, Vincent; Guethlein, Gary

    2014-06-10

    A two-phase mixed media insulator having a dielectric fluid filling the interstices between macro-sized dielectric beads packed into a confined volume, so that the packed dielectric beads inhibit electro-hydrodynamically driven current flows of the dielectric liquid and thereby increase the resistivity and breakdown strength of the two-phase insulator over the dielectric liquid alone. In addition, an electrical apparatus incorporates the two-phase mixed media insulator to insulate between electrical components of different electrical potentials. And a method of electrically insulating between electrical components of different electrical potentials fills a confined volume between the electrical components with the two-phase dielectric composite, so that the macro dielectric beads are packed in the confined volume and interstices formed between the macro dielectric beads are filled with the dielectric liquid.

  1. Sensitivity of radiation methods of diagnosis of electric potentials in dielectric materials

    International Nuclear Information System (INIS)

    Sapozhkov, Yu.I.; Smekalin, L.F.; Yagushkin, N.I.

    1985-01-01

    On the base of the albedo method the characteristics of radiation methods of diagnosis of electric potentials inside dielectrics, such as sensitivity and resolution are considered. Investigations are carried out for electron energies of tens keV. It is shown that with energy growth the sensitivity to electric field in the dielectrics volume drops. The target atomic number growth reduces the sensitivity approximately 1/lnz. The albedo method resolution in the investigated energy range is constant. The results obtained testify to the usability radiation methods of the diagnosis for control of electric fields of dielectric structural materials in the course of their operation

  2. Effect of Biomass Waste Filler on the Dielectric Properties of Polymer Composites

    Directory of Open Access Journals (Sweden)

    Yew Been Seok

    2016-07-01

    Full Text Available The effect of biomass waste fillers, namely coconut shell (CS and sugarcane bagasse (SCB on the dielectric properties of polymer composite was investigated. The aim of this study is to investigate the potential of CS and SCB to be used as conductive filler (natural source of carbon in the polymer composite. The purpose of the conductive filler is to increase the dielectric properties of the polymer composite. The carbon composition the CS and SCB was determine through carbon, hydrogen, nitrogen and sulphur (CHNS elemental analysis whereas the structural morphology of CS and SCB particles was examined by using scanning electron microscope. Room temperature open-ended coaxial line method was used to determine the dielectric constant and dielectric loss factor over broad band frequency range of 200 MHz-20 GHz. Based on this study, the results found that CS and SCB contain 48% and 44% of carbon, which is potentially useful to be used as conductive elements in the polymer composite. From SEM morphology, presence of irregular shape particles (size ≈ 200 μm and macroporous structure (size ≈ 2.5 μm were detected on CS and SCB. For dielectric properties measurement, it was measured that the average dielectric constant (ε' is 3.062 and 3.007 whereas the average dielectric loss factor (ε" is 0.282 and 0.273 respectively for CS/polymer and SCB/polymer composites. The presence of the biomass waste fillers have improved the dielectric properties of the polymer based composite (ε' = 2.920, ε" = 0.231. However, the increased in the dielectric properties is not highly significant, i.e. up to 4.86 % increase in ε' and 20% increase in ε". The biomass waste filler reinforced polymer composites show typical dielectric relaxation characteristic at frequency of 10 GHz - 20 GHz and could be used as conducting polymer composite for suppressing EMI at high frequency range.

  3. Electromechanical response of silicone dielectric elastomers

    Science.gov (United States)

    Cârlescu, V.; Prisăcaru, G.; Olaru, D.

    2016-08-01

    This paper presents an experimental technique to investigate the electromechanical properties of silicone dielectric elastomers actuated with high DC electric fields. A non-contact measurement technique is used to capture and monitor the thickness strain (contraction) of a circular film placed between two metallic disks electrodes. Two active fillers such as silica (10, 15 and 30 wt%) and barium titanate (5 and 15 wt%) were incorporated in order to increase the actuation performance. Thickness strain was measured at HV stimuli up to 4.5 kV and showed a quadratic dependence against applied electric field indicating that the induced strain is triggered by the Maxwell effect and/or electrostriction phenomenon as reported in literature. The actuation process evidences a rapid contraction upon HV activation and a slowly relaxation when the electrodes are short-circuit due to visco-elastic nature of elastomers. A maximum of 1.22 % thickness strain was obtained at low actuating field intensity (1.5 V/pm) comparable with those reported in literature for similar dielectric elastomer materials.

  4. Dielectric Properties of PE/Clay Nanocomposites

    Directory of Open Access Journals (Sweden)

    E. David

    2013-01-01

    Full Text Available Polyethylene/nanoclay specimens containing from 0 to 5% nanoclays were prepared from a commercially available premixed PE/nanoclay masterbatch containing 50% wt of nanoclay. The masterbatch was diluted to the desired concentration by adding PE along with various amounts of compatibilizer in order to achieve the best possible dispersion of the nanoclay platelets. The dielectric response of the compounded samples was investigated using a combination of time and frequency-domain spectroscopy in order to cover a wide frequency window. Both techniques were in good agreement when the time-domain data was transformed into frequency-domain data. Despite their low concentration, the addition of the dispersed nanoclays led to a significant alteration of the material dielectric response in the form of the appearance of various interfacial relaxation processes and an increase of charge carrier transport within the insulation material. Moreover, an onset of nonlinear charge transport process was observed at moderate fields for specimens containing a relatively low level of nanoclays. The high-field breakdown strength was shown to have been improved by the incorporation of the nanoparticles, particularly when the exfoliation was enhanced by the use of a maleic anhydride grafted polyethylene compatibilizer.

  5. Complex dielectric modulus and relaxation response at low microwave frequency region of dielectric ceramic Ba6-3xNd8+2xTi18O54

    Directory of Open Access Journals (Sweden)

    Chian Heng Lee

    2014-10-01

    Full Text Available The desirable characteristics of Ba6-3xNd8+2xTi18O54 include high dielectric constant, low loss tangent, and high quality factor developed a new field for electronic applications. The microwave dielectric properties of Ba6-3xNd8+2xTi18O54, with x = 0.15 ceramics at different sintering temperatures (600–1300°C were investigated. The phenomenon of polarization produced by the applied electric field was studied. The dielectric properties with respect to frequency from 1 MHz to 1.5 GHz were measured using Impedance Analyzer, and the results were compared and analyzed. The highest dielectric permittivity and lowest loss factor were defined among the samples. The complex dielectric modulus was evaluated from the measured parameters of dielectric measurement in the same frequency range, and used to differentiate the contribution of grain and grain boundary.

  6. The Terahertz Scattering Analysis of Rough Metallic and Dielectric Targets

    Directory of Open Access Journals (Sweden)

    Mou Yuan

    2018-02-01

    Full Text Available The terahertz scattering characteristics of metallic and dielectric rough targets is important for the investigation of the terahertz radar targets properties. According to the stationary phase theory and scalar approximation, if the radius of curvature at any point of the surface is much larger than the incident wavelength, and the wavelength is also much longer than the surface height function and Root-Mean-Square (RMS surface slope, the coherent and incoherent scattering Radar Cross Section (RCS of rough metallic and dielectric targets can be obtained. Based on the stationary phase approximation, the coherent RCS of rough conductors, smooth dielectric targets and rough dielectric targets can be easily deputed. The scattering characteristics of electrically large smooth Al and painted spheres are investigated in this paper, and the calculated RCS are verified by Mie scattering theory, the error is less than 0.1 dBm2. Based on lambert theory, it is demonstrated that the incoherent RCS is analyzed with better precision if the rough surfaces are divided into much more facets. In this paper, the coherent and incoherent scattering of rough Al and painted spheres are numerically observed, and the effects of surface roughness and materials are analyzed. The conclusions provide theoretical foundation for the terahertz scattering characteristics of electrically large rough targets.

  7. Influence of refraction index strength on the light propagation in dielectrics material with periodic refraction index

    International Nuclear Information System (INIS)

    Hidayat, Arif; Latifah, Eny; Kurniati, Diana; Wisodo, Hari

    2016-01-01

    This study investigated the influence of refraction index strength on the light propagation in refraction index-varied dielectric material. This dielectric material served as photonic lattice. The behavior of light propagation influenced by variation of refraction index in photonic lattice was investigated. Modes of the guiding light were determined numerically using squared-operator iteration method. It was found that the greater the strength of refraction index, the smaller the guiding modes.

  8. Comparison of stress-induced voiding phenomena in copper line–via structures with different dielectric materials

    International Nuclear Information System (INIS)

    Hou, Yuejin; Tan, Cher Ming

    2009-01-01

    The package level stress-induced voiding (SIV) test of Cu dual-damascene line–via structures is performed. Two different dielectrics, undoped silica glass (USG) and carbon doped oxide (CDO), are used in this work. After 1344 h of high temperature storage test, the resistance drift of USG interconnects is found to be much smaller than that of CDO interconnects and voids are located at the bottom of the via for both USG and CDO interconnects. However, horizontal voids grown along the via bottom is observed for USG interconnects, whilst voids are found to grow vertically along the via sidewall for CDO interconnects. The phenomena are explained using finite element analysis in this work, and the observed poor SIV performance for CDO interconnects is also explained. With this finite element analysis, the implications of different low-k dielectrics on SIV reliability are discussed

  9. Low dielectric and low surface free energy flexible linear aliphatic alkoxy core bridged bisphenol cyanate ester based POSS nanocomposites

    Directory of Open Access Journals (Sweden)

    Muthukaruppan eAlagar

    2013-10-01

    Full Text Available The aim of the present work is to develop a new type of flexible linear aliphatic alkoxy core bridged bisphenol cyanate ester (AECE based POSS nanocomposites for low k applications. The POSS-AECE nanocomposites were developed by incorporating varying weight percentages (0, 5 and 10 wt % of octakis (dimethylsiloxypropylglycidylether silsesquioxane (OG-POSS into cyanate esters. Data from thermal and dielectric studies imply that the POSS reinforced nanocomposite exhibits higher thermal stability and low dielectric value of k=2.4 (10 wt% POSS-AECE4 compared than those of neat AECE. From the contact angle measurement, it is inferred that, the increase in the percentage incorporation of POSS in to AECE, the values of water contact angle was enhanced. Further, the value of surface free energy was lower when compared to that of neat AECE. The molecular level dispersion of POSS into AECE was ascertained from SEM and TEM analyses.

  10. Dielectric coatings on metal substrates

    International Nuclear Information System (INIS)

    Glaros, S.S.; Baker, P.; Milam, D.

    1976-01-01

    Large aperture, beryllium substrate-based mirrors have been used to focus high intensity pulsed laser beams. Finished surfaces have high reflectivity, low wavefront distortion, and high laser damage thresholds. This paper describes the development of a series of metallic coatings, surface finishing techniques, and dielectric overcoatings to meet specified performance requirements. Beryllium substrates were coated with copper, diamond-machined to within 5 micro-inches to final contour, nickel plated, and abrasively figured to final contour. Bond strengths for several bonding processes are presented. Dielectric overcoatings were deposited on finished multimetallic substrates to increase both reflectivity and the damage thresholds. Coatings were deposited using both high and low temperature processes which induce varying stresses in the finished coating substrate system. Data are presented to show the evolution of wavefront distortion, reflectivity, and damage thresholds throughout the many steps involved in fabrication

  11. Investigation of chemical bond characteristics, thermal expansion coefficients and bulk moduli of alpha-R2MoO6 and R2Mo2O7 (R = rare earths) by using a dielectric chemical bond method.

    Science.gov (United States)

    Li, Huaiyong; Zhang, Siyuan; Zhou, Shihong; Cao, Xueqiang

    2009-09-01

    Theoretical researches are performed on the alpha-R2MoO6 (R = Y, Gd, Tb Dy, Ho, Er, Tm and Yb) and pyrochlore-type R2Mo2O7 (R = Y, Nd, Sm, Gd, Tb and Dy) rare earth molybdates by using chemical bond theory of dielectric description. The chemical bonding characteristics and their relationship with thermal expansion property and compressibility are explored. The calculated values of linear thermal expansion coefficient (LTEC) and bulk modulus agree well with the available experimental values. The calculations reveal that the LTECs and the bulk moduli do have linear relationship with the ionic radii of the lanthanides: the LTEC decreases from 6.80 to 6.62 10(-6)/K and the bulk modulus increases from 141 to 154 GPa when R goes in the order Gd, Tb Dy, Ho, Er, Tm, and Yb in the alpha-R2MoO6 series; while in the R2Mo2O7 series, the LTEC ranges from 6.80 to 6.61 10(-6)/K and the bulk modulus ranges from 147 to 163 GPa when R varies in the order Nd, Sm, Gd, Tb and Dy. Copyright 2008 Wiley Periodicals, Inc.

  12. Asymmetric Dielectric Elastomer Composite Material

    Science.gov (United States)

    Stewart, Brian K. (Inventor)

    2014-01-01

    Embodiments of the invention provide a dielectric elastomer composite material comprising a plurality of elastomer-coated electrodes arranged in an assembly. Embodiments of the invention provide improved force output over prior DEs by producing thinner spacing between electrode surfaces. This is accomplished by coating electrodes directly with uncured elastomer in liquid form and then assembling a finished component (which may be termed an actuator) from coated electrode components.

  13. Coherent multimoded dielectric wakefield accelerators

    International Nuclear Information System (INIS)

    Power, J.

    1998-01-01

    There has recently been a study of the potential uses of multimode dielectric structures for wakefield acceleration [1]. This technique is based on adjusting the wakefield modes of the structure to constructively interfere at certain delays with respect to the drive bunch, thus providing an accelerating gradient enhancement over single mode devices. In this report we examine and attempt to clarify the issues raised by this work in the light of the present state of the art in wakefield acceleration

  14. Dipolar cross-linkers for PDMS networks with enhanced dielectric permittivity and low dielectric loss

    DEFF Research Database (Denmark)

    Bahrt, Frederikke; Daugaard, Anders Egede; Hvilsted, Søren

    2013-01-01

    -(4-((4-nitrophenyl)diazenyl)phenoxy)-prop-1-yn-1-ylium, with a synthesized silicone compatible azide-functional cross-linker by click chemistry. The thermal, mechanical and electromechanical properties were investigated for PDMS films with 0 to 3.6 wt% of dipole-cross-linker. The relative dielectric permittivity......Dipole grafted cross-linkers were utilized to prepare polydimethylsiloxane (PDMS) elastomers with various chain lengths and with various concentrations of functional cross-linker. The grafted cross-linkers were prepared by reaction of two alkyne-functional dipoles, 1-ethynyl-4-nitrobenzene and 3...

  15. Energy storage in ceramic dielectrics

    International Nuclear Information System (INIS)

    Love, G.R.

    1990-01-01

    Historically, multilayer ceramic capacitors (MLC's) have not been considered for energy storage applications for two primary reasons. First, physically large ceramic capacitors were very expensive and, second, total energy density obtainable was not nearly so high as in electrolytic capacitor types. More recently, the fabrication technology for MLC's has improved significantly, permitting both significantly higher energy density and significantly lower costs. Simultaneously, in many applications, total energy storage has become smaller, and the secondary requirements of very low effective series resistance and effective series inductance (which, together, determine how efficiently the energy may be stored and recovered) have become more important. It is therefore desirable to reexamine energy storage in ceramics for contemporary commercial and near-commercial dielectrics. Stored energy is proportional to voltage squared only in the case of paraelectric insulators, because only they have capacitance that is independent of bias voltage. High dielectric constant materials, however, are ferroics (that is ferroelectric and/or antiferroelectric) and display significant variation of effective dielectric constant with bias voltage

  16. Dielectric-filled radiofrequency linacs

    Energy Technology Data Exchange (ETDEWEB)

    Faehl, R J; Keinigs, R K; Pogue, E W [Los Alamos National Lab., NM (United States)

    1997-12-31

    High current, high brightness electron beam accelerators promise to open up dramatic new applications. Linear induction accelerators are currently viewed as the appropriate technology for these applications. A concept by Humphries and Hwang may permit radiofrequency accelerators to fulfill the same functions with greater simplicity and enhanced flexibility. This concept involves the replacement of vacuum rf cavities with dielectric filled ones. Simple analysis indicates that the resonant frequencies are reduced by a factor of ({epsilon}{sub 0}/{epsilon}){sup 1/2} while the stored energy is increased by {epsilon}/{epsilon}{sub 0}. For a high dielectric constant like water, this factor can approach 80. A series of numerical calculations of simple pill-box cavities was performed. Eigenfunctions and resonant frequencies for a full system configuration, including dielectric material, vacuum beamline, and a ceramic window separating the two have been computed. These calculations are compared with the results of a small experimental cavity which have been constructed and operated. Low power tests show excellent agreement. (author). 4 figs., 8 refs.

  17. Electromechanical performance analysis of inflated dielectric elastomer membrane for micro pump applications

    Science.gov (United States)

    Saini, Abhishek; Ahmad, Dilshad; Patra, Karali

    2016-04-01

    Dielectric elastomers have received a great deal of attention recently as potential materials for many new types of sensors, actuators and future energy generators. When subjected to high electric field, dielectric elastomer membrane sandwiched between compliant electrodes undergoes large deformation with a fast response speed. Moreover, dielectric elastomers have high specific energy density, toughness, flexibility and shape processability. Therefore, dielectric elastomer membranes have gained importance to be applied as micro pumps for microfluidics and biomedical applications. This work intends to extend the electromechanical performance analysis of inflated dielectric elastomer membranes to be applied as micro pumps. Mechanical burst test and cyclic tests were performed to investigate the mechanical breakdown and hysteresis loss of the dielectric membrane, respectively. Varying high electric field was applied on the inflated membrane under different static pressure to determine the electromechanical behavior and nonplanar actuation of the membrane. These tests were repeated for membranes with different pre-stretch values. Results show that pre-stretching improves the electromechanical performance of the inflated membrane. The present work will help to select suitable parameters for designing micro pumps using dielectric elastomer membrane. However this material lacks durability in operation.This issue also needs to be investigated further for realizing practical micro pumps.

  18. Electrostatic accelerator dielectrics

    International Nuclear Information System (INIS)

    Cooke, C.M.

    1989-05-01

    High voltage insulation problems in electrostatic accelerators are discussed. The aim of the analysis is to broaden the knowledge, highlight the characteristics of insulation technology and design strategies to improve use. The basic geometry of the insulation in accelerators is considered. A detailed description of each of the insulation regions is provided. The gas gap insulation of the terminal voltage is found to be sensitive to regions of high electric stress. In order to obtain satisfactory performance from solid support insulation, the attention is focused on the electric stress value and distribution. Potential subjects for discussion and further investigations are given

  19. Terahertz-frequency dielectric response of liquids

    DEFF Research Database (Denmark)

    Jepsen, Peter Uhd; Møller, Uffe; Cooke, David

    The dielectric response of liquids spans many decades in frequency. The dielectric response of a polar liquid is typically determined by relaxational dynamics of the dipolar moments of the liquid. In contrast, the dielectric response of a nonpolar liquid is determined by much weaker collision......-induced dipole moments. In the polar liquid water the fastest relaxational dynamics is found at terahertz frequencies, just below the first intermolecular vibrational and librational modes. In this presentation we will discuss optical terahertz spectroscopic techniques for measurement of the full dielectric...... function of liquids at terahertz frequencies. We will review the current understanding of the high-frequency dielectric spectrum of water, and discuss the relation between the dielectric spectrum and the thermodynamic properties of certain aqueous solutions....

  20. Rectifying the Optical-Field-Induced Current in Dielectrics: Petahertz Diode.

    Science.gov (United States)

    Lee, J D; Yun, Won Seok; Park, Noejung

    2016-02-05

    Investigating a theoretical model of the optical-field-induced current in dielectrics driven by strong few-cycle laser pulses, we propose an asymmetric conducting of the current by forming a heterojunction made of two distinct dielectrics with a low hole mass (m_{h}^{*}≪m_{e}^{*}) and low electron mass (m_{e}^{*}≪m_{h}^{*}), respectively. This proposition introduces the novel concept of a petahertz (10^{15}  Hz) diode to rectify the current in the petahertz domain, which should be a key ingredient for the electric signal manipulation of future light-wave electronics. Further, we suggest the candidate dielectrics for the heterojunction.

  1. The influence of various dielectric parameters on the reststrahlen region of SiC

    International Nuclear Information System (INIS)

    Engelbrecht, J.A.A.; Rooyen, I.J. van

    2011-01-01

    The reststrahlen region of SiC is analysed with the goal of establishing the origin of different shapes of this band, by varying the dielectric parameters involved when simulating the reststrahlen region as obtained by infrared reflectance. -- Research highlights: → An anomalous peak observed in the reststrahlen band of SiC was investigated. → The reflection spectrum of SiC in the reststrahlen region was simulated by theoretical calculations. → The influence on the reststrahlen band of the dielectric parameters used in the simulations is discussed. → Dielectric parameters used in the simulations did not yield the anomalous peak that is observed experimentally.

  2. The influence of various dielectric parameters on the reststrahlen region of SiC

    Energy Technology Data Exchange (ETDEWEB)

    Engelbrecht, J.A.A., E-mail: Japie.Engelbrecht@nmmu.ac.z [Physics Department, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Rooyen, I.J. van [Physics Department, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); National Laser Centre, CSIR, PO Box 395, Pretoria 0001 (South Africa)

    2011-02-01

    The reststrahlen region of SiC is analysed with the goal of establishing the origin of different shapes of this band, by varying the dielectric parameters involved when simulating the reststrahlen region as obtained by infrared reflectance. -- Research highlights: {yields} An anomalous peak observed in the reststrahlen band of SiC was investigated. {yields} The reflection spectrum of SiC in the reststrahlen region was simulated by theoretical calculations. {yields} The influence on the reststrahlen band of the dielectric parameters used in the simulations is discussed. {yields} Dielectric parameters used in the simulations did not yield the anomalous peak that is observed experimentally.

  3. Study of dielectric liquids at room temperature for high energy x ray Tomography

    International Nuclear Information System (INIS)

    Lepert, S.

    1989-09-01

    The detection of X rays by means of a dielectric liquid detector system, at room temperature, is discussed. The physico-chemical properties of a dielectric liquid, the construction of a cleaning device and of two electrode configurations, and the utilization of different amplifier models are studied. The results allowed the analysis and characterization of the behavior of the dielectric liquid under X ray irradiation. Data obtained is confirmed by computerized simulation. The choice of Tetramethyl-germanium for the X ray tomography, applied in nondestructive analysis, is explained. The investigation of the system parameters allowed the setting of the basis of a prototype project for a multi-detector [fr

  4. Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment

    International Nuclear Information System (INIS)

    Lim, Taekyung; Kim, Dongchool; Ju, Sanghyun

    2013-01-01

    Deposition of high-quality dielectric on a graphene channel is an essential technology to overcome structural constraints for the development of nano-electronic devices. In this study, we investigated a method for directly depositing aluminum oxide (Al 2 O 3 ) on a graphene channel through nitrogen plasma treatment. The deposited Al 2 O 3 thin film on graphene demonstrated excellent dielectric properties with negligible charge trapping and de-trapping in the gate insulator. A top-gate-structural graphene transistor was fabricated using Al 2 O 3 as the gate dielectric with nitrogen plasma treatment on graphene channel region, and exhibited p-type transistor characteristics

  5. Development of a dielectric ceramic based on diatomite-titania part two: dielectric properties characterization

    Directory of Open Access Journals (Sweden)

    Medeiros Jamilson Pinto

    1998-01-01

    Full Text Available Dielectric properties of sintered diatomite-titania ceramics are presented. Specific capacitance, dissipation factor, quality factor and dielectric constant were determined as a function of sintering temperature, titania content and frequency; the temperature coefficient of capacitance was measured as a function of frequency. Besides leakage current, the dependence of the insulation resistance and the dielectric strength on the applied dc voltage were studied. The results show that diatomite-titania compositions can be used as an alternative dielectric.

  6. Hybrid energy harvesting systems, using piezoelectric elements and dielectric polymers

    Science.gov (United States)

    Cornogolub, Alexandru; Cottinet, Pierre-Jean; Petit, Lionel

    2016-09-01

    Interest in energy harvesting applications has increased a lot during recent years. This is especially true for systems using electroactive materials like dielectric polymers or piezoelectric materials. Unfortunately, these materials despite multiple advantages, present some important drawbacks. For example, many dielectric polymers demonstrated high energy densities; they are cheap, easy to process and can be easily integrated in many different structures. But at the same time, dielectric polymer generators require an external energy supply which could greatly compromise their autonomy. Piezoelectric systems, on the other hand, are completely autonomous and can be easily miniaturized. However, most common piezoelectric materials present a high rigidity and are brittle by nature and therefore their integration could be difficult. This paper investigates the possibility of using hybrid systems combining piezoelectric elements and dielectric polymers for mechanical energy harvesting applications and it is focused mainly on the problem of electrical energy transfer. Our objective is to show that such systems can be interesting and that it is possible to benefit from the advantages of both materials. For this, different configurations were considered and the problem of their optimization was addressed. The experimental work enabled us to prove the concept and identify the main practical limitations.

  7. Effective dielectric mixture model for characterization of diesel contaminated soil

    International Nuclear Information System (INIS)

    Al-Mattarneh, H.M.A.

    2007-01-01

    Human exposure to contaminated soil by diesel isomers can have serious health consequences like neurological diseases or cancer. The potential of dielectric measuring techniques for electromagnetic characterization of contaminated soils was investigated in this paper. The purpose of the research was to develop an empirical dielectric mixture model for soil hydrocarbon contamination application. The paper described the basic theory and elaborated in dielectric mixture theory. The analytical and empirical models were explained in simple algebraic formulas. The experimental study was then described with reference to materials, properties and experimental results. The results of the analytical models were also mathematically explained. The proposed semi-empirical model was also presented. According to the result of the electromagnetic properties of dry soil contaminated with diesel, the diesel presence had no significant effect on the electromagnetic properties of dry soil. It was concluded that diesel had no contribution to the soil electrical conductivity, which confirmed the nonconductive character of diesel. The results of diesel-contaminated soil at saturation condition indicated that both dielectric constant and loss factors of soil were decreased with increasing diesel content. 15 refs., 2 tabs., 9 figs

  8. Boron nitride hollow nanospheres: Synthesis, formation mechanism and dielectric property

    Energy Technology Data Exchange (ETDEWEB)

    Zhong, B.; Tang, X.H. [School of Materials Science and Engineering, Harbin Institute of Technology at Weihai, Weihai 264209 (China); Huang, X.X., E-mail: swliza@hit.edu.cn [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Xia, L. [School of Materials Science and Engineering, Harbin Institute of Technology at Weihai, Weihai 264209 (China); Zhang, X.D. [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Wang, C.J. [School of Materials Science and Engineering, Harbin Institute of Technology at Weihai, Weihai 264209 (China); Wen, G.W., E-mail: g.wen@hit.edu.cn [School of Materials Science and Engineering, Harbin Institute of Technology at Weihai, Weihai 264209 (China); School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China)

    2015-04-15

    Highlights: • BN hollow nanospheres are fabricated in large scale via a new CVD method. • Morphology and structure are elucidated by complementary analytical techniques. • Formation mechanism is proposed based on experimental observations. • Dielectric properties are investigated in the X-band microwave frequencies. • BN hollow nanospheres show lower dielectric loss than regular BN powders. - Abstract: Boron nitride (BN) hollow nanospheres have been successfully fabricated by pyrolyzing vapors decomposed from ammonia borane (NH{sub 3}BH{sub 3}) at 1300 °C. The final products have been extensively characterized by X-ray diffraction, field-emission scanning electron microscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy. The BN hollow nanospheres were ranging from 100 to 300 nm in diameter and around 30–100 nm in thickness. The internal structure of the products was found dependent on the reaction temperatures. A possible formation mechanism of the BN hollow nanospheres was proposed on the basis of the experimental observations. Dielectric measurements in the X-band microwave frequencies (8–12 GHz) showed that the dielectric loss of the paraffin filled by the BN hollow nanospheres was lower than that filled by regular BN powders, which indicated that the BN hollow nanospheres could be potentially used as low-density fillers for microwave radomes.

  9. PARAMETERS OPTIMIZATION OF METAL-DIELECTRIC NANOSTRUCTURES FOR SENSOR APPLICATIONS

    Directory of Open Access Journals (Sweden)

    V. I. Egorov

    2014-07-01

    Full Text Available We present calculation results of optical properties of silver nanoparticles with dielectric shell in relation to their applications in chemical and biosensors. Absorption cross-section calculation for spherical silver nanoparticles was performed by quasi static dipole approximation. It is shown that dielectric shell thickness equal to 2-3 nm and its refraction index equal to 1,5-1,75 are optimal. Calculation results were compared to experimental data. Experimental investigation of metal-dielectric nanostructures sensitivity to external refraction index was performed. Synthesis of silver nanoparticles with dielectric shell on glass surface was performed by nanosecond laser ablation method in near-surface glass layer at 1,06 μm wavelength (Solar LQ129. Synthesis of silver nanoparticles without a shell on the glass surface with silver ions was performed using thermal treatment in wet atmosphere. Spectrophotometer Cary 500 (Varyan was used for spectral measurements. In case of laser ablation method application, external refraction index changes from 1 (the air to 1,33 (water and plasmon resonance band shift for 6 nm occurs. In case of another method application at the same conditions the registered shift was equal to 13 nm. However, in the latter case the particles can be easily removed from the substrate surface. Obtained results will be useful for developing chemical and biological sensors based on plasmon resonance band shift.

  10. Tunable electromechanical actuation in silicone dielectric film

    International Nuclear Information System (INIS)

    Lamberti, Andrea; Di Donato, Marco; Giorgis, Fabrizio; Chiappone, Annalisa; Canavese, Giancarlo

    2014-01-01

    Dielectric elastomer actuator films were fabricated on transparent conductive electrode using bi-component poly(dimethyl)siloxane (PDMS). PDMS is a well-known material in microfluidics and soft lithography for biomedical applications, being easy to process, low cost, biocompatible and transparent. Moreover its mechanical properties can be easily tuned by varying the mixing ratio between the oligomer base and the crosslinking agent. In this work we investigate the chemical composition and the electromechanical properties of PDMS thin film verifying for the first time the tuneable actuation response by simply modifying the amount of the curing agent. We demonstrate that, for a 20:1 ratio of base:crosslinker mixture, a striking 150% enhancement of Maxwell strain occurs at 1 Hz actuating frequency. (paper)

  11. Laser polarization dependent and magnetically control of group velocity in a dielectric medium doped with nanodiamond nitrogen vacancy centers

    Energy Technology Data Exchange (ETDEWEB)

    Asadpour, Seyyed Hossein; Rahimpour Soleimani, H., E-mail: Rahimpour@guilan.ac.ir

    2014-03-01

    In this paper, group velocity control of Gaussian beam in a dielectric medium doped with nanodiamond nitrogen vacancy (NV) centers under optical excitation is discussed. The shape of transmitted and reflected pulses from dielectric can be tuned by changing the intensity of magnetic field and polarization of the control beam. The effect of intensity of control beam on group velocity is also investigated.

  12. Silicone elastomers with high dielectric permittivity and high dielectric breakdown strength based on dipolar copolymers

    DEFF Research Database (Denmark)

    Madsen, Frederikke Bahrt; Yu, Liyun; Daugaard, Anders Egede

    2014-01-01

    Dielectric elastomers (DES) are a promising new transducer technology, but high driving voltages limit their current commercial potential. One method used to lower driving voltage is to increase dielectric permittivity of the elastomer. A novel silicone elastomer system with high dielectric...

  13. Thermal strain-induced dielectric anisotropy in Ba0.7Sr0.3TiO3 thin films grown on silicon-based substrates

    International Nuclear Information System (INIS)

    Zhu, X. H.; Defaye, E.; Aied, M.; Guigues, B.; Dubarry, C.

    2009-01-01

    Dielectric properties of Ba 0.7 Sr 0.3 TiO 3 (BST) thin films, which were prepared on silicon-based substrates by ion beam sputtering and postdeposition annealing method, were systematically investigated in different electrode configurations of metal-insulator-metal and coplanar interdigital capacitors. It was found that a large dielectric anisotropy exists in the films with better in-plane dielectric properties (higher dielectric permittivity and tunability) than those along the out-of-plane direction. The observed anisotropic dielectric responses are explained qualitatively in terms of a thermal strain effect that is related to dissimilar film strains along the in-plane and out-of-plane directions. Another reason for the dielectric anisotropy is due to different influences of the interfacial low-dielectric layer between the BST film and the substrate (metal electrode).

  14. Thermal strain-induced dielectric anisotropy in Ba0.7Sr0.3TiO3 thin films grown on silicon-based substrates

    Science.gov (United States)

    Zhu, X. H.; Guigues, B.; Defaÿ, E.; Dubarry, C.; Aïd, M.

    2009-07-01

    Dielectric properties of Ba0.7Sr0.3TiO3 (BST) thin films, which were prepared on silicon-based substrates by ion beam sputtering and postdeposition annealing method, were systematically investigated in different electrode configurations of metal-insulator-metal and coplanar interdigital capacitors. It was found that a large dielectric anisotropy exists in the films with better in-plane dielectric properties (higher dielectric permittivity and tunability) than those along the out-of-plane direction. The observed anisotropic dielectric responses are explained qualitatively in terms of a thermal strain effect that is related to dissimilar film strains along the in-plane and out-of-plane directions. Another reason for the dielectric anisotropy is due to different influences of the interfacial low-dielectric layer between the BST film and the substrate (metal electrode).

  15. An investigation on phase transition behaviors in MgO-doped Pb{sub 0.99}(Zr{sub 0.95}Ti{sub 0.05}){sub 0.98}Nb{sub 0.02}O{sub 3} ferroelectric ceramics by Raman and dielectric measurements

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Junxia, E-mail: wjunxia2002@163.com [Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010 (China); Wang, Genshui; Chen, Xuefeng [Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Hu, Zhigao [Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241 (China); Nie, Hengchang; Cao, Fei [Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Dong, Xianlin, E-mail: xldong@mail.sic.ac.cn [Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China)

    2015-03-15

    Highlights: • The phase transition behaviors were strongly dependent on MgO concentration. • The F{sub R(LT)}–F{sub R(HT)} phase transition temperature obviously shifted toward a lower temperature with increasing MgO addition. • The F{sub R(HT)}–cubic paraelectric (P{sub C}) phase transition changed to a higher temperature with increasing MgO addition. • The distortion of BO{sub 6} oxygen octahedron caused by B-site replacement of Mg{sup 2+} ions is proposed to explain the observed behaviors. • Superior room-temperature pyroelectric properties were obtained in 0.1 wt% MgO-modified PZTN 95/5 ceramics during F{sub R(LT)}–F{sub R(HT)} phase transition. - Abstract: The phase transition behaviors of Pb{sub 0.99}(Zr{sub 0.95}Ti{sub 0.05}){sub 0.98}Nb{sub 0.02}O{sub 3} ferroelectric ceramics doped with different MgO concentrations (0–0.2 wt%) were systematically investigated by Raman and dielectric measurements. Raman results showed that the phase transitions were strongly dependent on MgO concentration. It was found that the low temperature rhombohedral (F{sub R(LT)})–high temperature rhombohedral (F{sub R(HT)}) ferroelectric phase transition shifted toward a lower temperature with increasing MgO concentration up to 0.1 wt%, while the F{sub R(HT)}–cubic paraelectric (P{sub C}) phase transition changed to a higher temperature. The Raman results were in good agreement with phase transition determined by dielectric measurements. Moreover, it was indicated that the changes of Raman active modes were related to distortion of BO{sub 6} octahedra during the phase transitions. Then, the distortion of BO{sub 6} octahedron caused by B-site replacement of Mg{sup 2+} ions was proposed to explain the observed behaviors. In addition, the effects of MgO doping on the dielectric, ferroelectric and pyroelectric properties were also discussed.

  16. Extraction and dielectric properties of curcuminoid films grown on Si substrate for high-k dielectric applications

    International Nuclear Information System (INIS)

    Dakhel, A.A.; Jasim, Khalil E.; Cassidy, S.; Henari, F.Z.

    2013-01-01

    Highlights: • The unknown insulating properties of curcuminoid extract are systematically studied. • Optical study gives a bandgap of 3.15 eV and a refractive index of 1.92 at 505 nm. • Turmeric is a high-k environmental friendly material for use in microelectronics. • Curcuminoid extract can be used as insulator of MIS devices with ε ′ ∞ ≈54.2. -- Abstract: Curcuminoids were extracted from turmeric powder and evaporated in vacuum to prepare thin films on p-Si and glass substrates for dielectric and optical investigations. The optical absorption spectrum of the prepared amorphous film was not identical to that of the molecular one, which was identified by a strong wide absorption band in between ∼220 and 540 nm. The onset energy of the optical absorption of the film was calculated by using Hamberg et al. method. The dielectric properties of this material were systematically studied for future eco friendly applications in metal–insulator–semiconductor MIS field of applications. The complex dielectric properties were studied in the frequency range of 1–1000 kHz and was analysed in-terms of dielectric impedance Z * (ω) and modulus M * (ω). Generally, the curcuminoid complex can be considered as a high-k material and can be used in the environmental friendly production of microelectronic devices

  17. Extraction and dielectric properties of curcuminoid films grown on Si substrate for high-k dielectric applications

    Energy Technology Data Exchange (ETDEWEB)

    Dakhel, A.A.; Jasim, Khalil E. [Department of Physics, College of Science, University of Bahrain, P.O. Box 32038 (Bahrain); Cassidy, S. [Department of Basic Medical Sciences, Royal College of Surgeons in Ireland, Medical University of Bahrain, P.O. Box 15503 (Bahrain); Henari, F.Z., E-mail: fzhenari@rcsi-mub.com [Department of Basic Medical Sciences, Royal College of Surgeons in Ireland, Medical University of Bahrain, P.O. Box 15503 (Bahrain)

    2013-09-20

    Highlights: • The unknown insulating properties of curcuminoid extract are systematically studied. • Optical study gives a bandgap of 3.15 eV and a refractive index of 1.92 at 505 nm. • Turmeric is a high-k environmental friendly material for use in microelectronics. • Curcuminoid extract can be used as insulator of MIS devices with ε{sup ′}{sub ∞}≈54.2. -- Abstract: Curcuminoids were extracted from turmeric powder and evaporated in vacuum to prepare thin films on p-Si and glass substrates for dielectric and optical investigations. The optical absorption spectrum of the prepared amorphous film was not identical to that of the molecular one, which was identified by a strong wide absorption band in between ∼220 and 540 nm. The onset energy of the optical absorption of the film was calculated by using Hamberg et al. method. The dielectric properties of this material were systematically studied for future eco friendly applications in metal–insulator–semiconductor MIS field of applications. The complex dielectric properties were studied in the frequency range of 1–1000 kHz and was analysed in-terms of dielectric impedance Z{sup *}(ω) and modulus M{sup *}(ω). Generally, the curcuminoid complex can be considered as a high-k material and can be used in the environmental friendly production of microelectronic devices.

  18. Dielectric and impedance spectral characteristics of bulk ZnIn2Se4

    Science.gov (United States)

    El-Nahass, M. M.; Attia, A. A.; Salem, G. F.; Ali, H. A. M.; Ismail, M. I.

    2014-02-01

    The frequency and temperature dependence of ac conductivity, dielectric constant and dielectric loss of ZnIn2Se4 in a pellet form were investigated in the frequency range of 102-106 Hz and temperature range of 293-356 K. The behavior of ac conductivity was interpreted by the correlated barrier hopping (CBH) model. Temperature dependence of ac conductivity indicates that ac conduction is a thermally activated process. The density of localized states N(EF) and ac activation energy were estimated for various frequencies. Dielectric constant and dielectric loss showed a decrease with increasing frequency and an increase with increasing in temperature. The frequency dependence of real and imaginary parts of the complex impedance was investigated. The relaxation time decreases with the increase in temperature. The impedance spectrum exhibits the appearance of the single semicircular arc. The radius of semicircular arcs decreases with increasing temperature which suggests a mechanism of temperature-dependent on relaxation.

  19. Calculating the dielectric anisotropy of nematic liquid crystals: a reinvestigation of the Maier–Meier theory

    International Nuclear Information System (INIS)

    Ran, Zhang; Jun, He; Zeng-Hui, Peng; Li, Xuan

    2009-01-01

    This paper investigates the average dielectric permittivity (ε-bar ) in the Maier–Meier theory for calculating the dielectric anisotropy (Δε) of nematic liquid crystals. For the reason that ε-bar of nematics has the same expression as the dielectric permittivity of the isotropic state, the Onsager equation for isotropic dielectric was used to calculate it. The computed ε-bar shows reasonable agreement with the results of the numerical methods used in the literature. Molecular parameters, such as the polarizability and its anisotropy, the dipole moment and its angle with the molecular long axis, were taken from semi-empirical quantum chemistry (MOCPAC/AM1) modeling. The calculated values of Δε according to the Maier–Meier equation are in good agreement with the experimental results for the investigated compounds having different core structures and polar substituents. (condensed matter: structure, thermal and mechanical properties)

  20. Dielectric tensor elements for the description of waves in rotating inhomogeneous magnetized plasma spheroids

    Science.gov (United States)

    Abdoli-Arani, A.; Ramezani-Arani, R.

    2012-11-01

    The dielectric permittivity tensor elements of a rotating cold collisionless plasma spheroid in an external magnetic field with toroidal and axial components are obtained. The effects of inhomogeneity in the densities of charged particles and the initial toroidal velocity on the dielectric permittivity tensor and field equations are investigated. The field components in terms of their toroidal components are calculated and it is shown that the toroidal components of the electric and magnetic fields are coupled by two differential equations. The influence of thermal and collisional effects on the dielectric tensor and field equations in the rotating plasma spheroid are also investigated. In the limiting spherical case, the dielectric tensor of a stationary magnetized collisionless cold plasma sphere is presented.

  1. Temperature-dependent dielectric function of germanium in the UV–vis spectral range: A first-principles study

    International Nuclear Information System (INIS)

    Yang, J.Y.; Liu, L.H.; Tan, J.Y.

    2014-01-01

    The study of temperature dependence of thermophysical parameter dielectric function is key to understanding thermal radiative transfer in high-temperature environments. Limited by self-radiation and thermal oxidation, however, it is difficult to directly measure the high-temperature dielectric function of solids with present experimental technologies. In this work, we implement two first-principles methods, the ab initio molecular dynamics (AIMD) and density functional perturbation theory (DFPT), to study the temperature dependence of dielectric function of germanium (Ge) in the UV–vis spectral range in order to provide data of high-temperature dielectric function for radiative transfer study in high-temperature environments. Both the two methods successfully predict the temperature dependence of dielectric function of Ge. Moreover, the good agreement between the calculated results of the AIMD approach and experimental data at 825 K enables us to predict the high-temperature dielectric function of Ge with the AIMD method in the UV–vis spectral range. - Highlights: • The temperature dependence of dielectric function of germanium (Ge) is investigated with two first-principles methods. • The temperature effect on dielectric function of Ge is discussed. • The high-temperature dielectric function of Ge is predicted

  2. Effect of dielectric layers on device stability of pentacene-based field-effect transistors.

    Science.gov (United States)

    Di, Chong-an; Yu, Gui; Liu, Yunqi; Guo, Yunlong; Sun, Xiangnan; Zheng, Jian; Wen, Yugeng; Wang, Ying; Wu, Weiping; Zhu, Daoben

    2009-09-07

    We report stable organic field-effect transistors (OFETs) based on pentacene. It was found that device stability strongly depends on the dielectric layer. Pentacene thin-film transistors based on the bare or polystyrene-modified SiO(2) gate dielectrics exhibit excellent electrical stabilities. In contrast, the devices with the octadecyltrichlorosilane (OTS)-treated SiO(2) dielectric layer showed the worst stabilities. The effects of the different dielectrics on the device stabilities were investigated. We found that the surface energy of the gate dielectric plays a crucial role in determining the stability of the pentacene thin film, device performance and degradation of electrical properties. Pentacene aggregation, phase transfer and film morphology are also important factors that influence the device stability of pentacene devices. As a result of the surface energy mismatch between the dielectric layer and organic semiconductor, the electronic performance was degraded. Moreover, when pentacene was deposited on the OTS-treated SiO(2) dielectric layer with very low surface energy, pentacene aggregation occurred and resulted in a dramatic decrease of device performance. These results demonstrated that the stable OFETs could be obtained by using pentacene as a semiconductor layer.

  3. Ferroelectric dielectrics integrated on silicon

    CERN Document Server

    Defay, Emmanuel

    2013-01-01

    This book describes up-to-date technology applied to high-K materials for More Than Moore applications, i.e. microsystems applied to microelectronics core technologies.After detailing the basic thermodynamic theory applied to high-K dielectrics thin films including extrinsic effects, this book emphasizes the specificity of thin films. Deposition and patterning technologies are then presented. A whole chapter is dedicated to the major role played in the field by X-Ray Diffraction characterization, and other characterization techniques are also described such as Radio frequency characterizat

  4. Ionic Structure at Dielectric Interfaces

    Science.gov (United States)

    Jing, Yufei

    The behavior of ions in liquids confined between macromolecules determines the outcome of many nanoscale assembly processes in synthetic and biological materials such as colloidal dispersions, emulsions, hydrogels, DNA, cell membranes, and proteins. Theoretically, the macromolecule-liquid boundary is often modeled as a dielectric interface and an important quantity of interest is the ionic structure in a liquid confined between two such interfaces. The knowledge gleaned from the study of ionic structure in such models can be useful in several industrial applications, such as biosensors, lithium-ion batteries double-layer supercapacitors for energy storage and seawater desalination. Electrostatics plays a critical role in the development of such functional materials. Many of the functions of these materials, result from charge and composition heterogeneities. There are great challenges in solving electrostatics problems in heterogeneous media with arbitrary shapes because electrostatic interactions remains unknown but depend on the particular density of charge distributions. Charged molecules in heterogeneous media affect the media's dielectric response and hence the interaction between the charges is unknown since it depends on the media and on the geometrical properties of the interfaces. To determine the properties of heterogeneous systems including crucial effects neglected in classical mean field models such as the hard core of the ions, the dielectric mismatch and interfaces with arbitrary shapes. The effect of hard core interactions accounts properly for short range interactions and the effect of local dielectric heterogeneities in the presence of ions and/or charged molecules for long-range interactions are both analyzed via an energy variational principle that enables to update charges and the medium's response in the same simulation time step. In particular, we compute the ionic structure in a model system of electrolyte confined by two planar dielectric

  5. Broadband cloaking using composite dielectrics

    Directory of Open Access Journals (Sweden)

    Ruey-Bing Hwang

    2011-03-01

    Full Text Available In this paper, we present a novel cloaking structure that is able to make a metallic block invisible in a metallic waveguide. Such a cloak is made up of a stack of commonly used dielectric slabs. We carry out the numerical simulation and observe the detour of the vector Poynting power through the cloak. Moreover, the experiment is conducted for measuring the scattering characteristics including the reflection and transmission coefficients. The great improvement in the transmission coefficient in a broad bandwidth after cloaking is demonstrated. Significantly, the theory of mode conversion is developed for explaining the cloaking phenomenon.

  6. Enhancement of dielectric permittivity by incorporating PDMS-PEG multiblock copolymers in silicone elastomers

    DEFF Research Database (Denmark)

    A Razak, Aliff Hisyam; Szabo, Peter; Skov, Anne Ladegaard

    2015-01-01

    A silicone elastomer from PDMS-PEG multiblock copolymer has been prepared by use of silylation reactions for both copolymer preparation and crosslinking. The dielectric and mechanical properties of the silicone elastomers were carefully investigated, as well as the morphology of the elastomers wa...... to a significantly increased dielectric permittivity. The conductivity also remained low due to the resulting discontinuity in PEG within the silicone matrix....

  7. Total reflection and cloaking by zero index metamaterials loaded with rectangular dielectric defects

    KAUST Repository

    Wu, Ying

    2013-05-06

    In this work, we investigate wave transmission property through a zero index metamaterial (ZIM) waveguide embedded with rectangular dielectric defects. We show that total reflection and total transmission (cloaking) can be achieved by adjusting the geometric sizes and/or permittivities of the defects. Our work provides another possibility of manipulating wave propagation through ZIM in addition to the widely studied dielectric defects with cylindrical geometries.

  8. High voltage capacitor design and the determination of solid dielectric voltage breakdown

    International Nuclear Information System (INIS)

    Hutapea, S.

    1976-01-01

    The value of the external field intensity serves as an electrical insulating material and is a physical characteristic of the substance. Capacitor discharge in the dielectric medium are experimentally investigated. The high voltage power supply and other instrument needed are briefly discussed. Capacitors with working voltage of 30.000 volt and the plastic being used for dielectrics in the capacitors are also discussed. (author)

  9. Contamination aspects in integrating high dielectric constant and ferroelectric materials into CMOS processes

    OpenAIRE

    Boubekeur, Hocine

    2004-01-01

    n memory technology, new materials are being intensively investigated to overcome the integration limits of conventional dielectrics for Giga-bit scale integration, or to be able to produce new types of non-volatile low power memories such as FeRAM. Perovskite type high dielectric constant films for use in Giga-bit scale memories or layered perovskite films for use in non-volatile memories involve materials to semiconductor process flows, which entail a high risk of contamination. The introdu...

  10. Total reflection and cloaking by zero index metamaterials loaded with rectangular dielectric defects

    KAUST Repository

    Wu, Ying; Li, Jichun

    2013-01-01

    In this work, we investigate wave transmission property through a zero index metamaterial (ZIM) waveguide embedded with rectangular dielectric defects. We show that total reflection and total transmission (cloaking) can be achieved by adjusting the geometric sizes and/or permittivities of the defects. Our work provides another possibility of manipulating wave propagation through ZIM in addition to the widely studied dielectric defects with cylindrical geometries.

  11. High Stability Pentacene Transistors Using Polymeric Dielectric Surface Modifier.

    Science.gov (United States)

    Wang, Xiaohong; Lin, Guangqing; Li, Peng; Lv, Guoqiang; Qiu, Longzhen; Ding, Yunsheng

    2015-08-01

    1,6-bis(trichlorosilyl)hexane (C6Cl), polystyrene (PS), and cross-linked polystyrene (CPS) were investigated as gate dielectric modified layers for high performance organic transistors. The influence of the surface energy, roughness and morphology on the charge transport of the organic thin-film transistors (OTFTs) was investigated. The surface energy and roughness both affect the grain size of the pentacene films which will control the charge carrier mobility of the devices. Pentacene thin-film transistors fabricated on the CPS modified dielectric layers exhibited charge carrier mobility as high as 1.11 cm2 V-1 s-1. The bias stress stability for the CPS devices shows that the drain current only decays 1% after 1530 s and the mobility never decreases until 13530 s.

  12. High thermal conductivity lossy dielectric using a multi layer configuration

    Science.gov (United States)

    Tiegs, Terry N.; Kiggans, Jr., James O.

    2003-01-01

    Systems and methods are described for loss dielectrics. A loss dielectric includes at least one high dielectric loss layer and at least one high thermal conductivity-electrically insulating layer adjacent the at least one high dielectric loss layer. A method of manufacturing a loss dielectric includes providing at least one high dielectric loss layer and providing at least one high thermal conductivity-electrically insulating layer adjacent the at least one high dielectric loss layer. The systems and methods provide advantages because the loss dielectrics are less costly and more environmentally friendly than the available alternatives.

  13. Thermally stimulated discharge current (TSDC) and dielectric ...

    Indian Academy of Sciences (India)

    Unknown

    2001-10-09

    Oct 9, 2001 ... Measurements of TSDC and dielectric constant, ε′, have been ... Keywords. Semiconducting glass; TSDC; trap energy; dielectric constant. 1. ... determination of mean depth of the internal charge, activation ... thermal charging, viz. (i) internal ... the basis of d.c. conductivity and short range Na+ ion motion.

  14. Dielectric spectroscopy of watermelons for quality sensing

    Science.gov (United States)

    Nelson, Stuart O.; Guo, Wen-chuan; Trabelsi, Samir; Kays, Stanley J.

    2007-07-01

    Dielectric properties of four small-sized watermelon cultivars, grown and harvested to provide a range of maturities, were measured with an open-ended coaxial-line probe and an impedance analyser over the frequency range from 10 MHz to 1.8 GHz. Probe measurements were made on the external surface of the melons and also on tissue samples from the edible internal tissue. Moisture content and soluble solids content (SSC) were measured for internal tissue samples, and SSC (sweetness) was used as the quality factor for correlation with the dielectric properties. Individual dielectric constant and loss factor correlations with SSC were low, but a high correlation was obtained between the SSC and permittivity from a complex-plane plot of dielectric constant and loss factor, each divided by SSC. However, SSC prediction from the dielectric properties by this relationship was not as high as expected (coefficient of determination about 0.4). Permittivity data (dielectric constant and loss factor) for the melons are presented graphically to show their relationships with frequency for the four melon cultivars and for external surface and internal tissue measurements. A dielectric relaxation for the external surface measurements, which may be attributable to a combination of bound water, Maxwell-Wagner, molecular cluster or ion-related effects, is also illustrated. Coefficients of determination for complex-plane plots, moisture content and SSC relationship, and penetration depth are also shown graphically. Further studies are needed for determining the practicality of sensing melon quality from their dielectric properties.

  15. Dielectric material options for integrated capacitors

    NARCIS (Netherlands)

    Ruhl, G.; Lehnert, W.; Lukosius, M.; Wenger, C.; Baristiran Kaynak, C.; Blomberg, T.; Haukka, S.; Baumann, P.K.; Besling, W.F.A.; Roest, A.L.; Riou, B.; Lhostis, S.; Halimaou, A.; Roozeboom, F.; Langereis, E.; Kessels, W.M.M.; Zauner, A.; Rushworth, S.A.

    2014-01-01

    Future MIM capacitor generations will require significantly increased specific capacitances by utilization of high-k dielectric materials. In order to achieve high capacitance per chip area, these dielectrics have to be deposited in three-dimensional capacitor structures by ALD or AVD (atomic vapor

  16. Analysis of electron interactions in dielectric gases

    International Nuclear Information System (INIS)

    Olivet, Aurelio; Duque, Daniel; Vega, Lourdes F.

    2007-01-01

    We present and discuss results concerning electron interactions processes of dielectric gases and their relationship with the macroscopic behavior of these gases, in particular, with their dielectric strength. Such analysis is based on calculating energies of reactions for molecular ionization, dissociative ionization, parent negative ion formation, and dissociative electron attachment processes. We hypothesize that the estimation of the required energy for a reduced number of processes that take place in electrically stressed gases could be related to the gas' capability to manage the electron flow during an electrical discharge. All calculations were done with semiempirical quantum chemistry methods, including an initial optimization of molecular geometry and heat of formation of the dielectric gases and all of species that appear during electron interaction reactions. The performance of semiempirical methods Austin model 1 and Parametric model 3 (PM3) was compared for several compounds, PM3 being superior in most cases. Calculations performed for a sample of nine dielectric gases show that electron attachment and detachment processes occur in different energy bands that do not overlap for any value of the dielectric strength. We have also analyzed the relationship between dielectric strength and two physical properties: electron affinity and ionization energy. Calculations performed for 43 dielectric gases show no clear correlation between them, although certain guidelines for the qualitative estimation of dielectric strength can still be assessed

  17. Aging of Dielectric Properties below Tg

    DEFF Research Database (Denmark)

    Olsen, Niels Boye; Dyre, Jeppe; Christensen, Tage Emil

    The dielectric loss at 1Hz in TPP is studied during a temperature step from one equilibrium state to another. In the applied cryostate the temperature can be equilibrated on a timescale of 1 second. The aging time dependence of the dielectric loss is studied below Tg applying temperature steps...

  18. Damage-free plasma etching of porous organo-silicate low-k using micro-capillary condensation above -50 °C.

    Science.gov (United States)

    Chanson, R; Zhang, L; Naumov, S; Mankelevich, Yu A; Tillocher, T; Lefaucheux, P; Dussart, R; Gendt, S De; Marneffe, J-F de

    2018-01-30

    The micro-capillary condensation of a new high boiling point organic reagent (HBPO), is studied in a periodic mesoporous oxide (PMO) with ∼34 % porosity and k-value ∼2.3. At a partial pressure of 3 mT, the onset of micro-capillary condensation occurs around +20 °C and the low-k matrix is filled at -20 °C. The condensed phase shows high stability from -50 < T ≤-35 °C, and persists in the pores when the low-k is exposed to a SF 6 -based plasma discharge. The etching properties of a SF 6 -based 150W-biased plasma discharge, using as additive this new HBPO gas, shows that negligible damage can be achieved at -50 °C, with acceptable etch rates. The evolution of the damage depth as a function of time was studied without bias and indicates that Si-CH 3 loss occurs principally through Si-C dissociation by VUV photons.

  19. Synthesis, Structure, and Film Properties of Novel low-k UV-active Polycarbosilanes with Embedded Disilacyclobutanes

    Science.gov (United States)

    LeFevre, Scott W.

    The phenylene-bridged cyclolinear polycarbosilane (PBCLPCS) was synthesized via Grignard coupling from 1,4-bis(bromomagnesio)benzene with 1,3-dichloro-, and 1,3-diethoxy-1,3-disilacyclobutanes (DCDSCB, and DEDSCB respectively). Investigation of the resulting chemical structures by nuclear magnetic resonance spectroscopy (NMR) revealed a wide array of possible end groups and thus termination mechanisms. Temperature-gradient interaction chromatography (TGIC) was employed as an effective separation tool to achieve a predominantly monomer-by-monomer separation of the low molecular weight reaction products. Further analysis of the TGIC fractions by matrix-assisted laser desorption ionization mass spectrometry with time of flight detection (MALDI-ToF) allowed for a much more detailed study of chemical structure, revealing very different primary modes of termination for the two synthesis schemes. While the slightly more reactive Si-Cl groups from DCDSCB are more sensitive to multiple side reactions including hydrolysis, it was shown that the primary end groups were phenyl rings, indicating a possible imbalance in stoichiometry favoring the aryl-Grignard reagent. The DEDSCB-based synthesis has fewer side reactions, as indicated by few groupings of MALDI peaks at regular intervals equal to the repeat unit molecular weight; however the primary end groups were unreacted ethoxy moieties, and a bromine terminated phenyl ring. This indicates that the primary modes of termination were either limited chain growth from the less reactive ethoxy groups, or incomplete formation of the di-Grignard. The optical, UV-curing and thin film characteristics of PBCLPCS were investigated to gain an understanding of the unique film properties of this new class of material. Upon UV-curing PBCLPCS, the chromophore blue shifts 11nm but still absorbs appreciably at 254nm, leading to UV attenuation at greater depths within a film. The thickness dependent UV-curing characteristics were investigated

  20. Microscopic resolution broadband dielectric spectroscopy

    International Nuclear Information System (INIS)

    Mukherjee, S; Watson, P; Prance, R J

    2011-01-01

    Results are presented for a non-contact measurement system capable of micron level spatial resolution. It utilises the novel electric potential sensor (EPS) technology, invented at Sussex, to image the electric field above a simple composite dielectric material. EP sensors may be regarded as analogous to a magnetometer and require no adjustments or offsets during either setup or use. The sample consists of a standard glass/epoxy FR4 circuit board, with linear defects machined into the surface by a PCB milling machine. The sample is excited with an a.c. signal over a range of frequencies from 10 kHz to 10 MHz, from the reverse side, by placing it on a conducting sheet connected to the source. The single sensor is raster scanned over the surface at a constant working distance, consistent with the spatial resolution, in order to build up an image of the electric field, with respect to the reference potential. The results demonstrate that both the surface defects and the internal dielectric variations within the composite may be imaged in this way, with good contrast being observed between the glass mat and the epoxy resin.

  1. Microscopic resolution broadband dielectric spectroscopy

    Science.gov (United States)

    Mukherjee, S.; Watson, P.; Prance, R. J.

    2011-08-01

    Results are presented for a non-contact measurement system capable of micron level spatial resolution. It utilises the novel electric potential sensor (EPS) technology, invented at Sussex, to image the electric field above a simple composite dielectric material. EP sensors may be regarded as analogous to a magnetometer and require no adjustments or offsets during either setup or use. The sample consists of a standard glass/epoxy FR4 circuit board, with linear defects machined into the surface by a PCB milling machine. The sample is excited with an a.c. signal over a range of frequencies from 10 kHz to 10 MHz, from the reverse side, by placing it on a conducting sheet connected to the source. The single sensor is raster scanned over the surface at a constant working distance, consistent with the spatial resolution, in order to build up an image of the electric field, with respect to the reference potential. The results demonstrate that both the surface defects and the internal dielectric variations within the composite may be imaged in this way, with good contrast being observed between the glass mat and the epoxy resin.

  2. Helium atmospheric pressure plasma jets touching dielectric and metal surfaces

    Science.gov (United States)

    Norberg, Seth A.; Johnsen, Eric; Kushner, Mark J.

    2015-07-01

    Atmospheric pressure plasma jets (APPJs) are being investigated in the context plasma medicine and biotechnology applications, and surface functionalization. The composition of the surface being treated ranges from plastics, liquids, and biological tissue, to metals. The dielectric constant of these materials ranges from as low as 1.5 for plastics to near 80 for liquids, and essentially infinite for metals. The electrical properties of the surface are not independent variables as the permittivity of the material being treated has an effect on the dynamics of the incident APPJ. In this paper, results are discussed from a computational investigation of the interaction of an APPJ incident onto materials of varying permittivity, and their impact on the discharge dynamics of the plasma jet. The computer model used in this investigation solves Poisson's equation, transport equations for charged and neutral species, the electron energy equation, and the Navier-Stokes equations for the neutral gas flow. The APPJ is sustained in He/O2 = 99.8/0.2 flowing into humid air, and is directed onto dielectric surfaces in contact with ground with dielectric constants ranging from 2 to 80, and a grounded metal surface. Low values of relative permittivity encourage propagation of the electric field into the treated material and formation and propagation of a surface ionization wave. High values of relative permittivity promote the restrike of the ionization wave and the formation of a conduction channel between the plasma discharge and the treated surface. The distribution of space charge surrounding the APPJ is discussed.

  3. Rb2Ti2O5 : Superionic conductor with colossal dielectric constant

    Science.gov (United States)

    Federicci, Rémi; Holé, Stéphane; Popa, Aurelian Florin; Brohan, Luc; Baptiste, Benoît.; Mercone, Silvana; Leridon, Brigitte

    2017-08-01

    Electrical conductivity and high dielectric constant are in principle self-excluding, which makes the terms insulator and dielectric usually synonymous. This is certainly true when the electrical carriers are electrons, but not necessarily in a material where ions are extremely mobile, electronic conduction is negligible, and the charge transfer at the interface is immaterial. Here we demonstrate in a perovskite-derived structure containing five-coordinated Ti atoms, a colossal dielectric constant (up to 109) together with very high ionic conduction 10-3Scm-1 at room temperature. Coupled investigations of I -V and dielectric constant behavior allow us to demonstrate that, due to ion migration and accumulation, this material behaves like a giant dipole, exhibiting colossal electrical polarization (of the order of 0.1Ccm-2 ). Therefore it may be considered as a "ferro-ionet" and is extremely promising in terms of applications.

  4. Effective dielectric functions of samples obtained by evaporation of alkali halides

    International Nuclear Information System (INIS)

    Sturm, J.; Grosse, P.; Theiss, W.

    1991-01-01

    This paper investigates the dielectric properties of inhomogeneous samples consisting of small alkali halide particles (NaCl, KBr) on gold-coated substrates. Our reflection measurements in the far infrared can be simulated as a thin layer of the power with an effective dielectric function on a perfectly reflecting substrate. Scanning electron micrographs provide useful information about sample topology. Several mixing formulas (e.g. the Maxwell-Garnett, the Bruggeman- and the Looyenga-formula) lead to effective dielectric functions neglecting the individual arrangement of the particles. The essence of our work is that, in contrast, the general ansatz of the Bergman spectral representation has to be employed in order to take into account topology effects on the dielectric function based on the so-called spectral density g adjustable to the specific situation. (orig.)

  5. An equivalent method of mixed dielectric constant in passive microwave/millimeter radiometric measurement

    Science.gov (United States)

    Su, Jinlong; Tian, Yan; Hu, Fei; Gui, Liangqi; Cheng, Yayun; Peng, Xiaohui

    2017-10-01

    Dielectric constant is an important role to describe the properties of matter. This paper proposes This paper proposes the concept of mixed dielectric constant(MDC) in passive microwave radiometric measurement. In addition, a MDC inversion method is come up, Ratio of Angle-Polarization Difference(RAPD) is utilized in this method. The MDC of several materials are investigated using RAPD. Brightness temperatures(TBs) which calculated by MDC and original dielectric constant are compared. Random errors are added to the simulation to test the robustness of the algorithm. Keywords: Passive detection, microwave/millimeter, radiometric measurement, ratio of angle-polarization difference (RAPD), mixed dielectric constant (MDC), brightness temperatures, remote sensing, target recognition.

  6. Dielectric properties of supramolecular ionic structures obtained from multifunctional carboxylic acids and amines

    DEFF Research Database (Denmark)

    Gonzalez, Lidia; Yu, Liyun; Hvilsted, Søren

    2014-01-01

    The dielectric properties of several supramolecular ionic polymers and networks, linked by the ammonium salts of hexamethylene diamine (HMDA), tris(2-aminoethyl)amine (TAEA), poly(propylene imine) (PPI) dendrimers and two short bis carboxymethyl ether-terminated poly(ethylene glycol)s (Di......COOH-PEG), are reported in this paper. All supramolecular ionic polymers and networks exhibit very high relative dielectric permittivities ( 3 0 )( 10 2 – 10 6 ) at low frequencies, and signi fi cantly lower values (from 1 up to 26) at high frequencies. Additionally, the dielectric properties of supramolecular ionic......), are investigated. Here the relative dielectric permittivities of the supramolecular ionic structures formed with the multifunctional carboxylic acids were lower than those from the supramolecular ionic structures formed with the two carboxymethyl ether-terminated poly(ethylene glycol)s....

  7. Effect of oxalic acid on the optical, thermal, dielectric and mechanical behaviour of ADP crystals

    International Nuclear Information System (INIS)

    Rajesh, P.; Ramasamy, P.

    2009-01-01

    The effect of the addition, over a concentration range from 1 to 5 mol%, of oxalic acid on the growth rate, optical transparency, hardness, dielectric behaviour, and SHG efficiency of ammonium dihydrogen phosphate single crystals grown by slow evaporation method has been investigated. UV-Vis studies show that the transparency of the oxalic acid added crystals decreased gradually. Thermal studies indicate that the decomposition temperatures of the crystal are decreased in oxalic acid added ADP crystals. It is observed from the dielectric measurements that the dielectric constant and dielectric loss increase with increase in temperature for all the crystals. Vicker's microhardness study reveals that the addition of higher concentration of oxalic acid decreases the hardness of the crystal. SHG efficiency of 1 mol% of oxalic acid is higher than the pure ADP.

  8. Disclosed dielectric and electromechanical properties of hydrogenated nitrile–butadiene dielectric elastomer

    International Nuclear Information System (INIS)

    Yang, Dan; Tian, Ming; Dong, Yingchao; Liu, Haoliang; Yu, Yingchun; Zhang, Liqun

    2012-01-01

    This paper presents a comprehensive study of the effects of acrylonitrile content, crosslink density and plasticization on the dielectric and electromechanical performances of hydrogenated nitrile–butadiene dielectric elastomer. It was found that by increasing the acrylonitrile content of hydrogenated nitrile–butadiene dielectric elastomer, the dielectric constant will be improved accompanied with a sharp decrease of electrical breakdown strength leading to a small actuated strain. At a fixed electric field, a high crosslink density increased the elastic modulus of dielectric elastomer, but it also enhanced the electrical breakdown strength leading to a high actuated strain. Adding a plasticizer into the dielectric elastomer decreased the dielectric constant and electrical breakdown strength slightly, but reduced the elastic modulus sharply, which was beneficial for obtaining a large strain at low electric field from the dielectric elastomer. The largest actuated strain of 22% at an electric field of 30 kV mm −1 without any prestrain was obtained. Moreover, the hydrogenated nitrile–butadiene dielectric actuator showed good history dependence. This proposed material has great potential to be an excellent dielectric elastomer. (paper)

  9. Multipactor susceptibility on a dielectric with two carrier frequencies

    Science.gov (United States)

    Iqbal, Asif; Verboncoeur, John; Zhang, Peng

    2018-04-01

    This work investigates multipactor discharge on a single dielectric surface with two carrier frequencies of an rf electric field. We use Monte Carlo simulations and analytical calculations to obtain susceptibility diagrams in terms of the rf electric field and normal electric field due to the residual charge on the dielectric. It is found that in contrast to the single frequency case, in general, the presence of a second carrier frequency of the rf electric field increases the threshold of the magnitude of the rf electric field to initiate multipactor. The effects of the relative strength and phase, and the frequency separation of the two carrier frequencies are examined. The conditions to minimize mulitpactor are derived.

  10. Self assembled monolayers of octadecyltrichlorosilane for dielectric materials

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Vijay, E-mail: cirivijaypilani@gmail.com [Centre for Nanoscience and Engineering, Indian Institute of Science-Bangalore (India); Mechanical Engineering Department, Birla Institute of Technology and Science-Pilani (India); Puri, Paridhi; Nain, Shivani [Mechanical Engineering Department, Birla Institute of Technology and Science-Pilani (India); Bhat, K. N. [Centre for Nanoscience and Engineering, Indian Institute of Science-Bangalore (India); Sharma, N. N. [Mechanical Engineering Department, Birla Institute of Technology and Science-Pilani (India); School of Automobile, Mechanical & Mechatronics, Manipal University-Jaipur (India)

    2016-04-13

    Treatment of surfaces to change the interaction of fluids with them is a critical step in constructing useful microfluidics devices, especially those used in biological applications. Selective modification of inorganic materials such as Si, SiO{sub 2} and Si{sub 3}N{sub 4} is of great interest in research and technology. We evaluated the chemical formation of OTS self-assembled monolayers on silicon substrates with different dielectric materials. Our investigations were focused on surface modification of formerly used common dielectric materials SiO{sub 2}, Si{sub 3}N{sub 4} and a-poly. The improvement of wetting behaviour and quality of monolayer films were characterized using Atomic force microscope, Scanning electron microscope, Contact angle goniometer, Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) monolayer deposited oxide surface.

  11. A novel Graphene Oxide film: Synthesis and Dielectric properties

    Science.gov (United States)

    Canimkurbey, Betul; San, Sait Eren; Yasin, Muhammad; Köse, Muhammet Erkan

    In this work, we used Hummers method to synthesize Graphene Oxide (GO) and its parallel plate impedance spectroscopic technique to investigate dielectric properties. Graphene Oxide films were coated using drop casting method on ITO substrate. To analyze film morphology, atomic force microscopy was used. Dielectrics measurements of the samples were performed using impedance analyzer (HP-4194) in frequency range (100 Hz to 10MHz) at different temperatures. It was observed that the films' AC conductivity σac varied with angular frequency, ω as ωS, with Sdirect current (DC) and Correlated Barrier Hopping (CBH) conductivity mechanisms at low and high frequency ranges, respectively. Using solution processed Graphene Oxide will provide potential for organic electronic applications through its photon absorption and transmittance capability in the visible range and excellent electrical parameters.

  12. Dielectric relaxation of glass particles with conductive nano-coatings

    Energy Technology Data Exchange (ETDEWEB)

    Hussain, Shahid [Applied Technologies Department, QinetiQ Limited, Cody Technology Park, Farnborough, Hampshire, GU14 0LX (United Kingdom)

    2009-03-21

    This research focuses on the dielectric properties of particles consisting of glass cores with nanometre conductive coatings. The effects of the core glass particle shape (sphere, flake and fibre) and size are investigated for different coating characteristics over the frequency range 0.5-18 GHz. Experimental results for the coated glass particle combinations show the existence of a dielectric loss peak. This feature is associated with interfacial relaxation between the insulating core glass particle and the nanoscale conductive coating. The relaxation mechanism provides enhanced loss that is not observed in conventional solid metal particle composites. The results are fitted to a model, which shows that the relaxation frequency increases with increasing coating conductivity and thickness, with additional parameters identified for further particle optimizations.

  13. AC conductivity and dielectric behavior of bulk Furfurylidenemalononitrile

    Science.gov (United States)

    El-Nahass, M. M.; Ali, H. A. M.

    2012-06-01

    AC conductivity and dielectric behavior for bulk Furfurylidenemalononitrile have been studied over a temperature range (293-333 K) and frequency range (50-5×106 Hz). The frequency dependence of ac conductivity, σac, has been investigated by the universal power law, σac(ω)=Aωs. The variation of the frequency exponent (s) with temperature was analyzed in terms of different conduction mechanisms, and it was found that the correlated barrier hopping (CBH) model is the predominant conduction mechanism. The temperature dependence of σac(ω) showed a linear increase with the increase in temperature at different frequencies. The ac activation energy was determined at different frequencies. Dielectric data were analyzed using complex permittivity and complex electric modulus for bulk Furfurylidenemalononitrile at various temperatures.

  14. Electrical characterization of atmospheric pressure dielectric barrier discharge in air

    International Nuclear Information System (INIS)

    Shrestha, P.; Subedi, D.P.; Joshi, U.M.

    2013-01-01

    This paper reports the electrical characterization of dielectric barrier discharge produced at atmospheric pressure using a high voltage power supply operating at 50Hz. The characteristics of the discharge have been studied under different values as such applied voltage and the electrode gap width. The results presented in this work can be helpful in understanding the influence of dielectric material on the nature of the discharge. An attempt has also been made to investigate the influence of ballast resistor on the magnitude of discharge current and also the density of micro-discharges. Our results indicated that with this power supply and electrode geometry, a relatively more homogenous discharge is observed for 3 mm spacing. (author)

  15. Longitudinal- and transverse-wake-field effects in dielectric structures

    International Nuclear Information System (INIS)

    Rosing, M.; Gai, W.

    1990-01-01

    A dielectric-loaded circular waveguide structure is a potential high-gradient linear wake-field accelerator. A complete solution is given for the longitudinal electric and magnetic fields excited by a δ function and a Gaussian charge distribution moving parallel to the guide axis. The fields are then given in the limit of particle velocity equal to the speed of light. Example calculations are given for a structure with inner radius of 2 mm, outer radius of 5 mm, dielectric constant of 3, and total charge of 100 nC. Peak wake fields in excess of 200 MV/m are found. Azimuthal modes 0 and 1 are investigated for the particular interest of acceleration and deflection problems

  16. Longitudinally mounted light emitting plasma in a dielectric resonator

    Energy Technology Data Exchange (ETDEWEB)

    Gilliard, Richard; DeVincentis, Marc; Hafidi, Abdeslam; O' Hare, Daniel; Hollingsworth, Gregg [LUXIM Corporation, 1171 Borregas Avenue, Sunnyvale, CA 94089 (United States)

    2011-06-08

    Methods for coupling power from a dielectric resonator to a light-emitting plasma have been previously described (Gilliard et al IEEE Trans. Plasma Sci. at press). Inevitably, regardless of the efficiency of power transfer, much of the emitted light is absorbed in the resonator itself which physically surrounds much if not all of the radiating material. An investigation into a method is presented here for efficiently coupling power to a longitudinally mounted plasma vessel which is mounted on the surface of the dielectric material of the resonator, thereby eliminating significant absorption of light within the resonator structure. The topology of the resonator and its physical properties as well as those of the metal halide plasma are presented. Results of basic models of the field configuration and plasma are shown as well as a configuration suitable as a practical light source.

  17. The color dielectric model of QCD

    International Nuclear Information System (INIS)

    Pirner, H.-J.; Massachusetts Inst. of Tech., Cambridge, MA; Massachusetts Inst. of Tech., Cambridge, MA

    1992-01-01

    This paper demonstrates the emergence of valence gluons and their bound states, the glueballs from perturbative quantum chromodynamics (QCD). We discuss the phenomenological constraints and theoretical method needed to generate effective glueballs actions. We show how color dielectric confinement works naively and in the lattice model of color dielectrics. This lattice model is derived for SU(2) color by a blockspinning Monte Carlo renormalization group procedure. We interpret the resulting long-distance as a strongly interacting lattice string theory where the valence link gluon fields randomize in the color dielectric background which mimics the integrated out high-frequency gluon modes in the vacuum. The fluctuations of the color dielectric fields are related to color neutral glueballs modes. We give the extension of this color dielectric SU(2) theory for general SU(N) with quarks and address the problems associated with combining confinement and chiral symmetry breaking. Finally we prove the efficiency of the effective theory in applications to the heavy quark system, the the baryon, to the nucleon-nucleon interaction, to baryon models and the gluon plasma transition. In all those cases the behavior of the higher energy gluons can be monitored via the color dielectric fields. An increase in the energy density from ''deconfining'' the higher frequency modes inside the flux tube or in thermally excited matter shows up as an increase in the value of the color dielectric field and its associated energy density. (Author)

  18. Virtual gap dielectric wall accelerator

    Science.gov (United States)

    Caporaso, George James; Chen, Yu-Jiuan; Nelson, Scott; Sullivan, Jim; Hawkins, Steven A

    2013-11-05

    A virtual, moving accelerating gap is formed along an insulating tube in a dielectric wall accelerator (DWA) by locally controlling the conductivity of the tube. Localized voltage concentration is thus achieved by sequential activation of a variable resistive tube or stalk down the axis of an inductive voltage adder, producing a "virtual" traveling wave along the tube. The tube conductivity can be controlled at a desired location, which can be moved at a desired rate, by light illumination, or by photoconductive switches, or by other means. As a result, an impressed voltage along the tube appears predominantly over a local region, the virtual gap. By making the length of the tube large in comparison to the virtual gap length, the effective gain of the accelerator can be made very large.

  19. Standards for dielectric elastomer transducers

    International Nuclear Information System (INIS)

    Carpi, Federico; Frediani, Gabriele; Anderson, Iain; Bauer, Siegfried; Gallone, Giuseppe; Gei, Massimiliano; Graaf, Christian; Jean-Mistral, Claire; Kaal, William; Kofod, Guggi; Kollosche, Matthias; Kornbluh, Roy; Pelrine, Ron; Lassen, Benny; Rechenbach, Björn; Matysek, Marc; Michel, Silvain; Nowak, Stephan; O’Brien, Benjamin; Pei, Qibing

    2015-01-01

    Dielectric elastomer transducers consist of thin electrically insulating elastomeric membranes coated on both sides with compliant electrodes. They are a promising electromechanically active polymer technology that may be used for actuators, strain sensors, and electrical generators that harvest mechanical energy. The rapid development of this field calls for the first standards, collecting guidelines on how to assess and compare the performance of materials and devices. This paper addresses this need, presenting standardized methods for material characterisation, device testing and performance measurement. These proposed standards are intended to have a general scope and a broad applicability to different material types and device configurations. Nevertheless, they also intentionally exclude some aspects where knowledge and/or consensus in the literature were deemed to be insufficient. This is a sign of a young and vital field, whose research development is expected to benefit from this effort towards standardisation. (paper)

  20. Standards for dielectric elastomer transducers

    Science.gov (United States)

    Carpi, Federico; Anderson, Iain; Bauer, Siegfried; Frediani, Gabriele; Gallone, Giuseppe; Gei, Massimiliano; Graaf, Christian; Jean-Mistral, Claire; Kaal, William; Kofod, Guggi; Kollosche, Matthias; Kornbluh, Roy; Lassen, Benny; Matysek, Marc; Michel, Silvain; Nowak, Stephan; O'Brien, Benjamin; Pei, Qibing; Pelrine, Ron; Rechenbach, Björn; Rosset, Samuel; Shea, Herbert

    2015-10-01

    Dielectric elastomer transducers consist of thin electrically insulating elastomeric membranes coated on both sides with compliant electrodes. They are a promising electromechanically active polymer technology that may be used for actuators, strain sensors, and electrical generators that harvest mechanical energy. The rapid development of this field calls for the first standards, collecting guidelines on how to assess and compare the performance of materials and devices. This paper addresses this need, presenting standardized methods for material characterisation, device testing and performance measurement. These proposed standards are intended to have a general scope and a broad applicability to different material types and device configurations. Nevertheless, they also intentionally exclude some aspects where knowledge and/or consensus in the literature were deemed to be insufficient. This is a sign of a young and vital field, whose research development is expected to benefit from this effort towards standardisation.

  1. Giant dielectric response in (Sr, Sb) codoped CaCu3Ti4O12 ceramics: A novel approach

    Science.gov (United States)

    Pradhan, M. K.; Rao, T. Lakshmana; Karna, Lipsarani; Dash, S.

    2018-04-01

    The CaCu3Ti4O12 (CCTO) remains as the best material for practical applications due to its high dielectric constant. To improve further the dielectric properties of CCTO to several orders in magnitude, a novel approach is adopted by codoping of Sr, Sb ions. The ceramic samples were fabricated by the conventional solid state route. The structure, morphology and detail dielectric properties were investigated systematically. All the samples crystalizes in a cubic symmetry with Im-3 space group. Sr substituted in Ca site can effectively suppress the grain growth, achieving a fine grained ceramic structure; however the grain size decreased slightly as Sb concentration increased further; whereas the dielectric permittivity of the ceramics increased drastically. The giant dielectric response was considered to be closely related with a reduction in the potential barrier height at grain boundaries (GBs) supported by the reduction in the activation energy for the conduction process.

  2. Significant performance enhancement in AlGaN/GaN high electron mobility transistor by high-κ organic dielectric

    International Nuclear Information System (INIS)

    Ze-Gao, Wang; Yuan-Fu, Chen; Cao, Chen; Ben-Lang, Tian; Fu-Tong, Chu; Xing-Zhao, Liu; Yan-Rong, Li

    2010-01-01

    The electrical properties of AlGaN/GaN high electron mobility transistor (HEMT) with and without high-κ organic dielectrics are investigated. The maximum drain current I D max and the maximum transconductance g m max of the organic dielectric/AlGaN/GaN structure can be enhanced by 74.5%, and 73.7% compared with those of the bare AlGaN/GaN HEMT, respectively. Both the threshold voltage V T and g m max of the dielectric/AlGaN/GaN HEMT are strongly dielectric-constant-dependent. Our results suggest that it is promising to significantly improve the performance of the AlGaN/GaN HEMT by introducing the high-κ organic dielectric. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  3. The morphological evolution and internal convection of ExB-drifting plasma clouds: Theory, dielectric-in-cell simulations, and N-body dielectric simulations

    International Nuclear Information System (INIS)

    Borovsky, J.E.; Hansen, P.J.

    1998-01-01

    The evolution of ExB-drifting plasma clouds is investigated with the aid of a computational technique denoted here as open-quotes dielectric-in-cell.close quotes Many of the familiar phenomena associated with clouds of collisionless plasma are seen and explained and less-well-known phenomena associated with convection patterns, with the stripping of cloud material, and with the evolution of plasma clouds composed of differing ion species are investigated. The effects of spatially uniform diffusion are studied with the dielectric-in-cell technique and with another computational technique denoted as open-quotes N-body dielectric;close quotes the suppression of convection, the suppression of structure growth, the increase in material stripping, and the evolution of cloud anisotropy are examined. copyright 1998 American Institute of Physics

  4. Radiation pressure on a dielectric surface

    International Nuclear Information System (INIS)

    Hirose, A.

    2010-01-01

    The radiation pressure on an insulating dielectric medium should be calculable from the force acting on the polarization vector P. The well-known force proposed by Gordon (Phys. Rev. A, 8, 14 (1973) disappears in the case of a steady-state plane wave. A new form of force explicitly involving the polarization vector is proposed and applied to determine the partition of the incident momentum among the reflected and transmitted wave, and the dielectric medium. The momentum of electromagnetic wave in a dielectric medium thus found is consistent with the classical relationship, wave momentum flux density = wave intensity/wave velocity. (author)

  5. Control of Evaporation Behavior of an Inkjet-Printed Dielectric Layer Using a Mixed-Solvent System

    Science.gov (United States)

    Yang, Hak Soon; Kang, Byung Ju; Oh, Je Hoon

    2016-01-01

    In this study, the evaporation behavior and the resulting morphology of inkjet-printed dielectric layers were controlled using a mixed-solvent system to fabricate uniform poly-4-vinylphenol (PVP) dielectric layers without any pinholes. The mixed-solvent system consisted of two different organic solvents: 1-hexanol and ethanol. The effects of inkjet-printing variables such as overlap condition, substrate temperature, and different printing sequences (continuous and interlacing printing methods) on the inkjet-printed dielectric layer were also investigated. Increasing volume fraction of ethanol (VFE) is likely to reduce the evaporation rate gradient and the drying time of the inkjet-printed dielectric layer; this diminishes the coffee stain effect and thereby improves the uniformity of the inkjet-printed dielectric layer. However, the coffee stain effect becomes more severe with an increase in the substrate temperature due to the enhanced outward convective flow. The overlap condition has little effect on the evaporation behavior of the printed dielectric layer. In addition, the interlacing printing method results in either a stronger coffee stain effect or wavy structures of the dielectric layers depending on the VFE of the PVP solution. All-inkjet-printed capacitors without electrical short circuiting can be successfully fabricated using the optimized PVP solution (VFE = 0.6); this indicates that the mixed-solvent system is expected to play an important role in the fabrication of high-quality inkjet-printed dielectric layers in various printed electronics applications.

  6. Preparation of a Carbon Doped Tissue-Mimicking Material with High Dielectric Properties for Microwave Imaging Application

    Directory of Open Access Journals (Sweden)

    Siang-Wen Lan

    2016-07-01

    Full Text Available In this paper, the oil-in-gelatin based tissue-mimicking materials (TMMs doped with carbon based materials including carbon nanotube, graphene ink or lignin were prepared. The volume percent for gelatin based mixtures and oil based mixtures were both around 50%, and the doping amounts were 2 wt %, 4 wt %, and 6 wt %. The effect of doping material and amount on the microwave dielectric properties including dielectric constant and conductivity were investigated over an ultra-wide frequency range from 2 GHz to 20 GHz. The coaxial open-ended reflection technology was used to evaluate the microwave dielectric properties. Six measured values in different locations of each sample were averaged and the standard deviations of all the measured dielectric properties, including dielectric constant and conductivity, were less than one, indicating a good uniformity of the prepared samples. Without doping, the dielectric constant was equal to 23 ± 2 approximately. Results showed with doping of carbon based materials that the dielectric constant and conductivity both increased about 5% to 20%, and the increment was dependent on the doping amount. By proper selection of doping amount of the carbon based materials, the prepared material could map the required dielectric properties of special tissues. The proposed materials were suitable for the phantom used in the microwave medical imaging system.

  7. High temperature measurements of the microwave dielectric properties of ceramics

    International Nuclear Information System (INIS)

    Baeraky, T.A.

    1999-06-01

    Equipment has been developed for the measurement of dielectric properties at high temperature from 25 to 1700 deg. C in the microwave frequency range 614.97 to 3620.66 MHz using the cavity perturbation technique, to measure the permittivity of a range of ceramic materials. The complex permittivities of the standard materials, water and methanol, were measured at low temperature and compared with the other published data. A statistical analysis was made for the permittivity measurements of water and methanol using sample holders of different diameter. Also the measurements of these materials were used to compare the simple perturbation equation with its modifications and alternation correction methods for sample shape and the holes at the two endplates of the cavity. The dielectric properties of solid materials were investigated from the permittivity measurements on powder materials, shown in table 4.7, using the dielectric mixture equations. Two kinds of ceramics, oxide and nitrides, were selected for the high temperature dielectric measurements in microwave frequency ranges. Pure zirconia, yttria-stabilised zirconia, and Magnesia-stabilised zirconia are the oxide ceramics while aluminium nitride and silicon nitride are the nitride ceramics. A phase transformation from monoclinic to tetragonal was observed in pure zirconia in terms of the complex permittivity measurements, and the conduction mechanism in three regions of temperature was suggested to be ionic in the first region and a mixture of ionic and electronic in the second. The phase transition disappeared with yttria-stabilised zirconia but it was observed with magnesia-stabilised zirconia. Yttria doped zirconia was fully stabilised while magnesia stabilised was partially stabilised zirconia. The dielectric property measurements of aluminium nitride indicated that there is a transition from AIN to AlON, which suggested that the external layer of the AIN which was exposed to the air, contains alumina. It was

  8. A simple method for reducing inevitable dielectric loss in high-permittivity dielectric elastomers

    DEFF Research Database (Denmark)

    Madsen, Frederikke Bahrt; Yu, Liyun; Mazurek, Piotr Stanislaw

    2016-01-01

    elastomer matrix, with high dielectric permittivity and a low Young's modulus, aligned with no loss of mechanical stability, was prepared through the use of commercially available chloropropyl-functional silicone oil mixed into a tough commercial liquid silicone rubber silicone elastomer. The addition...... also decreased the dielectric losses of an elastomer containing dielectric permittivity-enhancing TiO2 fillers. Commercially available chloropropyl-functional silicone oil thus constitutes a facile method for improved silicone DEs, with very low dielectric losses.......Commercial viability of dielectric elastomers (DEs) is currently limited by a few obstacles, including high driving voltages (in the kV range). Driving voltage can be lowered by either decreasing the Young's modulus or increasing the dielectric permittivity of silicone elastomers, or a combination...

  9. Pulsed EM Field Response of a Thin, High-Contrast, Finely Layered Structure With Dielectric and Conductive Properties

    NARCIS (Netherlands)

    De Hoop, A.T.; Jiang, L.

    2009-01-01

    The response of a thin, high-contrast, finely layered structure with dielectric and conductive properties to an incident, pulsed, electromagnetic field is investigated theoretically. The fine layering causes the standard spatial discretization techniques to solve Maxwell's equations numerically to

  10. Fano-like resonance and scattering in dielectric(core)–metal(shell) composites embedded in active host matrices

    CSIR Research Space (South Africa)

    Jule, L

    2015-07-01

    Full Text Available We investigate light scattering by core–shell consisting of metal/dielectric composites considering spherical and cylindrical nanoinclusions, within the framework of the conventional Rayleigh approximation. By writing the electric potential...

  11. Dielectric properties and microstructural characterization of cubic pyrochlored bismuth magnesium niobates

    KAUST Repository

    Zhang, Yuan

    2013-08-06

    Cubic bismuth pyrochlores in the Bi2O3 Bi 2O3-MgO-Nb2O5 Nb2O 5 system have been investigated as promising dielectric materials due to their high dielectric constant and low dielectric loss. Here, we report on the dielectric properties and microstructures of cubic pyrochlored Bi 1.5 MgNb 1.5 O 7 Bi1.5MgNb1.5O7 (BMN) ceramic samples synthesized via solid-state reactions. The dielectric constant (measured at 1 MHz) was measured to be ∼ 120 ∼120 at room temperature, and the dielectric loss was as low as 0.001. X-ray diffraction patterns demonstrated that the BMN samples had a cubic pyrochlored structure, which was also confirmed by selected area electron diffraction (SAED) patterns. Raman spectrum revealed more than six vibrational models predicted for the ideal pyrochlore structure, indicating additional atomic displacements of the A and O′ O\\' sites from the ideal atomic positions in the BMN samples. Structural modulations of the pyrochlore structure along the [110] and [121] directions were observed in SAED patterns and high-resolution transmission electron microscopy (HR-TEM) images. In addition, HR-TEM images also revealed that the grain boundaries (GBs) in the BMN samples were much clean, and no segregation or impure phase was observed forming at GBs. The high dielectric constants in the BMN samples were ascribed to the long-range ordered pyrochlore structures since the electric dipoles formed at the superstructural direction could be enhanced. The low dielectric loss was attributed to the existence of noncontaminated GBs in the BMN ceramics. © 2013 Springer-Verlag Berlin Heidelberg.

  12. High-κ gate dielectrics: Current status and materials properties considerations

    Science.gov (United States)

    Wilk, G. D.; Wallace, R. M.; Anthony, J. M.

    2001-05-01

    Many materials systems are currently under consideration as potential replacements for SiO2 as the gate dielectric material for sub-0.1 μm complementary metal-oxide-semiconductor (CMOS) technology. A systematic consideration of the required properties of gate dielectrics indicates that the key guidelines for selecting an alternative gate dielectric are (a) permittivity, band gap, and band alignment to silicon, (b) thermodynamic stability, (c) film morphology, (d) interface quality, (e) compatibility with the current or expected materials to be used in processing for CMOS devices, (f) process compatibility, and (g) reliability. Many dielectrics appear favorable in some of these areas, but very few materials are promising with respect to all of these guidelines. A review of current work and literature in the area of alternate gate dielectrics is given. Based on reported results and fundamental considerations, the pseudobinary materials systems offer large flexibility and show the most promise toward successful integration into the expected processing conditions for future CMOS technologies, especially due to their tendency to form at interfaces with Si (e.g. silicates). These pseudobinary systems also thereby enable the use of other high-κ materials by serving as an interfacial high-κ layer. While work is ongoing, much research is still required, as it is clear that any material which is to replace SiO2 as the gate dielectric faces a formidable challenge. The requirements for process integration compatibility are remarkably demanding, and any serious candidates will emerge only through continued, intensive investigation.

  13. Heat and mass transfer in a contaminated porous concrete slab with variable dielectric properties

    International Nuclear Information System (INIS)

    Li, W.; Ebadian, M.A.

    1994-01-01

    The effect of temperature dependent dielectric properties on concrete decontamination and decommissioning using microwave technology is investigated theoretically in this paper. The concrete is treated as a porous material, which has residual water and air within the pores. A one-dimensional model of unsteady heat and mass transport in the porous concrete with temperature dependent dielectric properties is developed. Based on this model, temperature and pressure with different microwave frequencies are predicted, the effects of the temperature dependent dielectric properties on microwave power dissipation, the temperature and pressure distributions for different microwave frequencies, and the different microwave power intensities are analyzed in detail. Four available industrial microwave frequencies of 0.896, 2.45, 10.6 and 18.0 GHz are used in the analysis. As a result of the dielectric properties varying with temperature, the power dissipation also varies with the heating times. Comparing the results for both temperature dependent and constant dielectric properties reveals that the variation of dielectric permittivity with temperature must be considered in a theoretical model of the concrete decontamination and decommissioning process for a low microwave frequency (f <2.45 GHz). (Author)

  14. Correlation between the dielectric properties and biological activities of human ex vivo hepatic tissue

    International Nuclear Information System (INIS)

    Wang, Hang; You, Fusheng; Fu, Feng; Dong, Xiuzhen; Shi, Xuetao; He, Yong; Yang, Min; Yan, Qingguo

    2015-01-01

    Dielectric properties are vital biophysical features of biological tissues, and biological activity is an index to ascertain the active state of tissues. This study investigated the potential correlation between the dielectric properties and biological activities of human hepatic tissue with prolonged ex vivo time through correlation and regression analyses. The dielectric properties of 26 cases of normal human hepatic tissue at 10 Hz to 100 MHz were measured from 15 min after isolation to 24 h at 37 °C with 90% humidity. Cell morphologies, including nucleus area (NA) and alteration rate of intercellular area (ICAR), were analyzed as indicators of biological activities. Conductivity, complex resistivity, and NA exhibited opposing changes 1 h after isolation. Relative permittivity and ex vivo time were not closely correlated (p > 0.05). The dielectric properties measured at low frequencies (i.e. <1 MHz) were more sensitive than those measured at high frequencies in reflecting the biological activity of ex vivo tissue. Highly significant correlations were found between conductivity, resistivity and the ex vivo time (p < 0.05) as well as conductivity and the cell morphology (p < 0.05). The findings indicated that establishing the correlation between the dielectric properties and biological activities of human hepatic tissue is of great significance for promoting the role of dielectric properties in biological science, particularly in human biology. (paper)

  15. Study of water mass transfer dynamics in frescoes by dielectric spectroscopy

    International Nuclear Information System (INIS)

    Olmi, R.; Riminesi, C.

    2008-01-01

    The knowledge of moisture content (M C) is essential for determining the state of preservation of various types of hand-work: from building materials such as bricks and concrete, to objects of artistic value, in particular frescoes and mural paintings. In all above, moisture is the primary source of damages, as it affects the durability of porous materials. Dielectric properties of porous materials are strongly affected by the presence of water, suggesting dielectric spectroscopy as a suitable non-invasive diagnostic technique. The development of a quantitative relationship between M C and permittivity requires to investigate the dynamics of water mass transfer in porous media, and to determine its effect on the dielectric properties. In this paper a coupled mass transfer/dielectric problem is introduced and solved numerically, based on a finite element model. Results are compared to experimental dielectric measurements performed on plaster samples by the open coaxial method. The application of the dielectric technique to frescoes monitoring is proposed, showing the results obtained is an on-site study.

  16. High Gain and High Directive of Antenna Arrays Utilizing Dielectric Layer on Bismuth Titanate Ceramics

    Directory of Open Access Journals (Sweden)

    F. H. Wee

    2012-01-01

    Full Text Available A high gain and high directive microstrip patch array antenna formed from dielectric layer stacked on bismuth titanate (BiT ceramics have been investigated, fabricated, and measured. The antennas are designed and constructed with a combination of two-, four-, and six-BiT elements in an array form application on microwave substrate. For gain and directivity enhancement, a layer of dielectric was stacked on the BiT antenna array. We measured the gain and directivity of BiT array antennas with and without the dielectric layer and found that the gain of BiT array antenna with the dielectric layer was enhanced by about 1.4 dBi of directivity and 1.3 dB of gain over the one without the dielectric layer at 2.3 GHz. The impedance bandwidth of the BiT array antenna both with and without the dielectric layer is about 500 MHz and 350 MHz, respectively, which is suitable for the application of the WiMAX 2.3 GHz system. The utilization of BiT ceramics that covers about 90% of antenna led to high radiation efficiency, and small-size antennas were produced. In order to validate the proposed design, theoretical and measured results are provided and discussed.

  17. Dielectric properties of single wall carbon nanotubes-based gelatin phantoms

    Science.gov (United States)

    Altarawneh, M. M.; Alharazneh, G. A.; Al-Madanat, O. Y.

    In this work, we report the dielectric properties of Single wall Carbon Nanotubes (SWCNTs)-based phantom that is mainly composed of gelatin and water. The fabricated gelatin-based phantom with desired dielectric properties was fabricated and doped with different concentrations of SWCNTs (e.g., 0%, 0.05%, 0.10%, 0.15%, 0.2%, 0.4% and 0.6%). The dielectric constants (real ɛ‧ and imaginary ɛ‧‧) were measured at different positions for each sample as a function of frequency (0.5-20GHz) and concentrations of SWCNTs and their averages were found. The Cole-Cole plot (ɛ‧ versus ɛ‧‧) was obtained for each concentration of SWCNTs and was used to obtain the static dielectric constant ɛs, the dielectric constant at the high limit of frequency ɛ∞ and the average relaxation time τ. The measurements showed that the fabricated samples are in good homogeneity and the SWCNTs are dispersed well in the samples as an acceptable standard deviation is achieved. The study showed a linear increase in the static dielectric constant ɛs and invariance of the average relaxation time τ and the value of ɛ∞ at room temperature for the investigated concentrations of SWCNTs.

  18. Structure-property relationship in dielectric mixtures: application of the spectral density theory

    International Nuclear Information System (INIS)

    Tuncer, Enis

    2005-01-01

    This paper presents numerical simulations performed on dielectric properties of two-dimensional binary composites. The influence of structural differences and intrinsic electrical properties of constituents on the composite's overall electrical properties is investigated. The structural differences are resolved by fitting the dielectric data with an empirical formula and by the spectral density representation approach. At low concentrations of inclusions (concentrations lower than the percolation threshold), the spectral density functions are delta-sequences, which corresponds to the predictions of the general Maxwell-Garnett (MG) mixture formula. At high concentrations of inclusions (close to the percolation threshold) systems exhibit non-Debye-type dielectric dispersions, and the spectral density functions differ from each other and that predicted by the MG expression. The analysis of the dielectric dispersions with an empirical formula also brings out the structural differences between the considered geometries, however, the information is not qualitative. The empirical formula can only be used to compare structures. The spectral representation method on the other hand is a concrete way of characterizing the structures of the dielectric mixtures. Therefore, as in other spectroscopic techniques, a look-up table might be useful to classify/characterize structures of composite materials. This can be achieved by generating dielectric data for known structures by using ab initio calculations, as presented and emphasized in this study. The numerical technique presented here is not based on any a priori assumption methods

  19. Characterization and microwave dielectric properties of Mg{sub 2}YVO{sub 6} ceramic

    Energy Technology Data Exchange (ETDEWEB)

    Su, Chia-Hui; Wang, Yi-Sheng; Huang, Cheng-Liang, E-mail: huangcl@mail.ncku.edu.tw

    2015-08-25

    Highlights: • Study the microwave dielectric properties and microstructure of Mg{sub 2}YVO{sub 6}. • Mg{sub 2}YVO{sub 6} possesses excellent dielectric properties. • Both extrinsic and intrinsic factors have effects on Q × f of specimens. - Abstract: Tetragonal-structured Mg{sub 2}YVO{sub 6} ceramics were prepared by conventional solid-state method, and their physical and microwave dielectric properties were investigated for the first time. The forming of Mg{sub 2}YVO{sub 6} main phase was confirmed by XRD diffraction pattern. XPS and Raman spectrum were recorded to clarify the chemical states of elements and vibration and rotation modes of the specimen, respectively. In addition, the relationships between sintering temperature, packing fraction, and microwave dielectric properties in Mg{sub 2}YVO{sub 6} ceramics were also studied. The new microwave dielectric material Mg{sub 2}YVO{sub 6} ceramics sintered at 1290 °C for 4 h has a dielectric constant (ε{sub r}) of ∼10.88, a Q × f of ∼68,300 GHz (f = 10.389 GHz), and a τ{sub f} ∼ −53.9 ppm/°C, demonstrating a candidate for microwave application.

  20. Dielectric response of capacitor structures based on PZT annealed at different temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Kamenshchikov, Mikhail V., E-mail: Mikhailkamenshchikov@yandex.ru [Tver State University, 170002, Tver (Russian Federation); Solnyshkin, Alexander V. [Tver State University, 170002, Tver (Russian Federation); Pronin, Igor P. [Ioffe Institute, 194021, St. Petersburg (Russian Federation)

    2016-12-09

    Highlights: • Correlation of the microstructure of PZT films and dielectric response was found. • Difference of dielectric responses under low and high bias is caused by domains. • Internal fields is discussed on the basis of the space charges. • Dependences of PZT films characteristics on synthesis temperature are extremal. - Abstract: Dielectric response of thin-film capacitor structures of Pt/PZT/Pt deposited by the RF magnetron sputtering method and annealed at temperatures of 540–570 °C was investigated. It was found that dielectric properties of these structures depend on the synthesis temperature. Stability of a polarized state is considered on the basis of the analysis of hysteresis loops and capacitance–voltage (C–V) characteristics. The contribution of the domain mechanism in the dielectric response of the capacitor structure comprising a ferroelectric is discussed. Extreme dependences of electrophysical characteristics of PZT films on their synthesis temperature were observed. Correlation of dielectric properties with microstructure of these films is found out.

  1. Identification of structural relaxation in the dielectric response of water

    DEFF Research Database (Denmark)

    Hansen, Jesper Schmidt; Kisliuk, Alexander; Solokov, Alexei P.

    2016-01-01

    One century ago pioneering dielectric results obtained for water and n-alcohols triggered the advent of molecular rotation diffusion theory considered by Debye to describe the primary dielectric absorption in these liquids. Comparing dielectric, viscoelastic, and light scattering results, we...... unambiguously demonstrate that the structural relaxation appears only as a high-frequency shoulder in the dielectric spectra of water. In contrast, the main dielectric peak is related to a supramolecular structure, analogous to the Debye-like peak observed in monoalcohols....

  2. Computation of Dielectric Response in Molecular Solids for High Capacitance Organic Dielectrics.

    Science.gov (United States)

    Heitzer, Henry M; Marks, Tobin J; Ratner, Mark A

    2016-09-20

    The dielectric response of a material is central to numerous processes spanning the fields of chemistry, materials science, biology, and physics. Despite this broad importance across these disciplines, describing the dielectric environment of a molecular system at the level of first-principles theory and computation remains a great challenge and is of importance to understand the behavior of existing systems as well as to guide the design and synthetic realization of new ones. Furthermore, with recent advances in molecular electronics, nanotechnology, and molecular biology, it has become necessary to predict the dielectric properties of molecular systems that are often difficult or impossible to measure experimentally. In these scenarios, it is would be highly desirable to be able to determine dielectric response through efficient, accurate, and chemically informative calculations. A good example of where theoretical modeling of dielectric response would be valuable is in the development of high-capacitance organic gate dielectrics for unconventional electronics such as those that could be fabricated by high-throughput printing techniques. Gate dielectrics are fundamental components of all transistor-based logic circuitry, and the combination high dielectric constant and nanoscopic thickness (i.e., high capacitance) is essential to achieving high switching speeds and low power consumption. Molecule-based dielectrics offer the promise of cheap, flexible, and mass producible electronics when used in conjunction with unconventional organic or inorganic semiconducting materials to fabricate organic field effect transistors (OFETs). The molecular dielectrics developed to date typically have limited dielectric response, which results in low capacitances, translating into poor performance of the resulting OFETs. Furthermore, the development of better performing dielectric materials has been hindered by the current highly empirical and labor-intensive pace of synthetic

  3. Effect of crystal structure on strontium titanate thin films and their dielectric properties

    Science.gov (United States)

    Kampangkeaw, Satreerat

    Strontium titanate (SrTiO3 or STO) has application in radio and microwave-frequency tunable capacitor devices particularly at low temperatures due to its high dielectric constant, low loss and the electric field tunability of its dielectric constant. The main goal of improving the performance in these devices is to increase the tunability and decrease the dielectric loss at the same time, especially at microwave frequencies. Thin films of STO however, show dramatic differences compared to the bulk. The dielectric constant of bulk STO increases nonlinearly from 300 at room temperature to 30000 at 4 K and the loss range is 10-3--10 -4. On the other hand. STO thin films, while showing a dielectric constant close to 300 at room temperature, typically reach a maximum between 1000 and 10000 in the 30 K to 100 K range before decreasing, and the high-loss range is 10-2--10-3. We have grown strontium titanate thin films using a pulsed laser deposition technique on substrates selected to have a small lattice mismatch between the film and substrate. Neodymium gallate (NdGaO3 or NGO) and lanthanum aluminate (LaAlO3 or LAO) substrates were good candidates due to only 1--2% mismatching. Film capacitor devices were fabricated with 25 micron gap separation. 1.5 mm total gap length and an overall 1 x 2 mm dimension using standard lithography and gold metal evaporative techniques. Their nonlinear dielectric constant and loss tangent were measured at low frequencies and also at 2 GHz, and from room temperature down to 4 K. The resulting films show significant variations of dielectric properties with position on the substrates with respect to the deposition plume axis. In the presence of DC electric fields up to +/-4 V/mum, STO films show improved dielectric tunability and low loss in regions far from the plume axis. We found that the films grown on NCO have lower dielectric loss than those on LAO due to a closer match of the NCO lattice to that of STO. We investigated the possible

  4. Dielectric properties of nanosilica filled epoxy nanocomposites

    Indian Academy of Sciences (India)

    M G Veena

    Polymer nanocomposites are the 21st century engineering materials with wide range of ... the electronic industry for dielectric materials in electrical insulation ..... be ascribed to the interface barriers and chain entangle- ments towards the ...

  5. The Electrical Breakdown of Thin Dielectric Elastomers

    DEFF Research Database (Denmark)

    Zakaria, Shamsul Bin; Morshuis, Peter H. F.; Yahia, Benslimane Mohamed

    2014-01-01

    Dielectric elastomers are being developed for use in actuators, sensors and generators to be used in various applications, such as artificial eye lids, pressure sensors and human motion energy generators. In order to obtain maximum efficiency, the devices are operated at high electrical fields....... This increases the likelihood for electrical breakdown significantly. Hence, for many applications the performance of the dielectric elastomers is limited by this risk of failure, which is triggered by several factors. Amongst others thermal effects may strongly influence the electrical breakdown strength....... In this study, we model the electrothermal breakdown in thin PDMS based dielectric elastomers in order to evaluate the thermal mechanisms behind the electrical failures. The objective is to predict the operation range of PDMS based dielectric elastomers with respect to the temperature at given electric field...

  6. imide, crystal structure, thermal and dielectric studies

    Indian Academy of Sciences (India)

    methyl imidazolium methylidene bis(trifluoromethanesulfonyl)imide, crystal structure, thermal and dielectric studies. BOUMEDIENE HADDAD1,2,3,∗, TAQIYEDDINE MOUMENE2, DIDIER VILLEMIN1,. JEAN-FRANÇOIS LOHIER1 and EL-HABIB ...

  7. Infrared and THz spectroscopy of nanostructured dielectrics

    Directory of Open Access Journals (Sweden)

    Jan Petzelt

    2009-09-01

    Full Text Available Results achieved using the infrared/THz spectroscopy of various inhomogeneous dielectrics in the Department of Dielectrics, Institute of Physics, Prague, during the last decade are briefly reviewed. The discussion concerns high-permittivity ceramics with inevitable low-permittivity dead layers along the grain boundaries, relaxor ferroelectrics with highly anisotropic polar nano-regions, classical matrix-type composites, core-shell composites, filled nanoporous glasses, polycrystalline and epitaxial thin films, heterostructures and superlattices on dielectric substrates. The analysis using models based on the effective medium approach is discussed. The importance of depolarizing field and of the percolation of components on the effective ac dielectric response and the excitations contributing to it are emphasized.

  8. Organic dielectrics in high voltage cables

    Energy Technology Data Exchange (ETDEWEB)

    Vermeer, J

    1962-03-01

    It appears that the limit has been reached in the applicability of oil-impregnated paper as the dielectric for ehv cables, as with rising voltages the prevention of conductor losses becomes increasingly difficult, while the dielectric losses of the insulation, increasing as the square of the voltage, contribute to a greater extent to the temperature rise of the conductor. The power transmitting capacity of ehv cables reaches a maximum at 500 to 600 kV for these reasons. Apart from artificial cooling, a substantial improvement can be obtained only with the use of insulating materials with much lower dielectric losses; these can moreover be applied with a smaller wall thickness, but this means higher field strengths. Synthetic polymer materials meet these requirements but can be used successfully only in the form of lapped film tapes impregnated with suitable liquids. The electrical properties of these heterogeneous dielectrics, in particular, their impulse breakdown strengths are studied in detail.

  9. Modeling the dielectric logging tool at high frequency

    International Nuclear Information System (INIS)

    Chew, W.C.

    1987-01-01

    The high frequency dielectric logging tool has been used widely in electromagnetic well logging, because by measuring the dielectric constant at high frequencies (1 GHz), the water saturation of rocks could be known without measuring the water salinity in the rocks. As such, it could be used to delineate fresh water bearing zones, as the dielectric constant of fresh water is much higher than that of oil while they may have the same resistivity. The authors present a computer model, though electromagnetic field analysis, the response of such a measurement tool in a well logging environment. As the measurement is performed at high frequency, usually with small separation between the transmitter and receivers, some small geological features could be measured by such a tool. They use the computer model to study the behavior of such a tool across geological bed boundaries, and also across thin geological beds. Such a study could be very useful in understanding the limitation on the resolution of the tool. Furthermore, they could study the standoff effect and the depth of investigation of such a tool. This could delineate the range of usefulness of the measurement

  10. Dynamics of dielectric barrier discharges in different arrangements

    International Nuclear Information System (INIS)

    Gibalov, Valentin I; Pietsch, Gerhard J

    2012-01-01

    Based on experimental results, numerical investigations of dielectric barrier discharges (DBDs) have been performed in three basic configurations: in the volume, coplanar and surface discharge arrangements. It is shown that the DBD dynamics is the same in all arrangements and it is determined by the development of a few principal constituents, i.e. cathode- and anode-directed streamers, discharge channel, cathode layer and surface charges. It is found that the anode- and cathode-directed streamers appear with a highly conductive channel in between. The interaction of the streamers with conductive and dielectric surfaces determines the filamentary or homogeneous appearance of the discharge and its properties. The cathode-directed streamer is a self-sustaining phenomenon, which moves in a gas gap or along an electrode driven by a positive loop-back between photoemission and electron multiplication. The anode-directed streamer plays a subsidiary role. Depending on the kind of gas (electronegative or electropositive) and/or the degree of development of the cathode-directed streamer, the field strength in the conductive channels changes significantly. When the cathode-directed streamer touches the electrode surface, a cathode layer appears with parameters close to those of normal glow discharges. In volume discharge arrangements the movement of the streamers results in the appearance of Lichtenberg figures on dielectric surfaces. (paper)

  11. Confinement in the color dielectric model

    International Nuclear Information System (INIS)

    Pirner, H.J.

    1990-01-01

    The paper consists of several parts. In Section 2, I give an introduction to the main physics of lattice gauge theory. Section 3 gives an outline of the colour dielectric model and first numerical results on the effective action after one block-spinning step. Section 4 reviews some new work on the generalization of the colour dielectric model to SU3 colour . (orig./HSI)

  12. In-beam dielectric properties of alumina

    International Nuclear Information System (INIS)

    Molla, J.; Ibarra, A.; Hodgson, E.R.

    1995-01-01

    The dielectric properties (permittivity and loss tangent) of a 99.7% purity alumina grade have been measured over a wide frequency range (1 kHz-15 GHz) before and after 2 MeV electron irradiation at different temperatures. The dielectric properties at 15 GHz were measured during irradiation. Both prompt and fluence effects are observed together with permanent changes which continue to evolve following irradiation. The behaviour is complex, consistent with both radiation induced electronic effects and aggregation processes. ((orig.))

  13. PREFACE: Dielectrics 2009: Measurement Analysis and Applications

    Science.gov (United States)

    Vaughan, Alun; Williams, Graham

    2009-07-01

    The conference Dielectrics 2009: Measurements, Analysis and Applications represents a significant milestone in the evolution of dielectrics research in the UK. It is reasonable to state that the academic study of dielectrics has led to many fundamental advances and that dielectric materials underpin the modern world in devices ranging from field effect transistors, which operate at extremely high fields, albeit low voltages, to the high voltage plants that provide the energy that powers our economy. The origins of the Dielectrics Group of the Institute of Physics (IOP), which organized this conference, can be traced directly back to the early 1960s, when Professor Mansel Davies was conducting research into the dielectric relaxation behaviour of polar liquids and solids at The Edward Davies Chemical Laboratories of the University College of Wales, Aberystwyth. He was already well-known internationally for his studies of molecular structure and bonding of small molecules, using infra-red-spectroscopy, and of the physical properties of hydrogen-bonded liquids and solids, using thermodynamic methods. Dielectric spectroscopy was a fairly new area for him and he realized that opportunities for scientists in the UK to gather together and discuss their research in this developing area of physical chemistry/chemical physics were very limited. He conceived the idea of forming a Dielectrics Discussion Group (DDG), which would act as a meeting point and provide a platform for dielectrics research in the UK and beyond and, as a result, a two-day Meeting was convened in the spring of 1968 at Gregynog Hall of the University of Wales, near Newtown, Montgomeryshire. It was organized by Mansel Davies, Alun Price and Graham Williams, all physical chemists from the UCW, Aberystwyth. Fifty scientists attended, being a mix of physical chemists, theoretical chemists, physicists, electrical engineers, polymer and materials scientists, all from the UK, except Dr Brendan Scaife of Trinity

  14. EFFECTS OF NEODYMIUM DOPING ON DIELECTRIC AND OPTICAL PROPERTIES OF Ba(1-xNdxTi1.005O3 CERAMICS

    Directory of Open Access Journals (Sweden)

    Zhang W.

    2013-06-01

    Full Text Available This paper investigated the optical properties and dielectric properties of neodymium doped BaTiO3 ceramics prepared by Ba(1-xNdxTi1.005O3 powders synthesized via a hydrothermal method. The effects of Nd3+ ions content on the structure, dielectric properties and optical properties of the ceramics were studied. The structural analysis performed on the X-ray diffractometer shows that the phase compositions of all ceramics are tetragonal phase structure. The red shift of the absorption edge indicates the presence of defect energy levels which was proved by the UV-Vis-NIR diffuse reflection spectra. Dielectric property measurements show that Nd-doped BaTiO3 ceramics possess improved dielectric properties at low Nd3+ contents (x = 0.001 and 0.002, as demonstrated by decreased dependence to frequency for both the dielectric constant and dielectric loss.

  15. Ozone Production Using Pulsed Dielectric Barrier Discharge in Oxygen

    OpenAIRE

    Samaranayake, W. J. M.; Miyahara, Y.; Namihira, T.; Katsuki, S.; Hackam, R.; Akiyama, H.; ナミヒラ, タカオ; カツキ, スナオ; アキヤマ, ヒデノリ; 浪平, 隆男; 勝木, 淳; 秋山, 秀典

    2000-01-01

    The production of ozone was investigated using a dielectric barrier discharge in oxygen, and employing short-duration pulsed power. The dependence of the ozone concentration (parts per million, ppm) and ozone production yield (g(O3)/kWh) on the peak pulsed voltage (17.5 to 57.9 kV) and the pulse repetition rate (25 to 400 pulses/s, pps) were investigated. In the present study, the following parameters were kept constant: a pressure of 1.01×105 Pa, a temperature of 26±4°C a gas flow rate of 3....

  16. Epoxy matrix with triaromatic mesogenic unit in dielectric spectroscopy observation

    Science.gov (United States)

    Włodarska, Magdalena; Mossety-Leszczak, Beata; Bąk, Grzegorz W.; Kisiel, Maciej; Dłużniewski, Maciej; Okrasa, Lidia

    2018-04-01

    This paper describes the dielectric response of a selected liquid crystal epoxy monomer (plain and in curing systems) in a wide range of frequency and temperature. The dielectric spectroscopy, thanks to its sensitivity, is a very good tool for studying phase transitions, reaction progress, or material properties. This sensitivity is important in the case of liquid crystal epoxy resins, where properties of the final network depend on the choice of monomers, curing agents, curing conditions and post-curing treatment, or applying an external electric or magnetic field during the reaction. In most of the obtained cured products, the collected dielectric data show two relaxation processes. The α-process is related to a structural reorientation; it can usually be linked with the glass transition and the mechanical properties of the material. The β-process can be identified as a molecular motion process, probably associated with the carboxyl groups in the mesogen. A transient Maxwell-Wagner relaxation observed in one of the compositions after the initial curing is removed by post-curing treatment at elevated temperatures. Post-curing is therefore necessary for obtaining uniformly cured products in those cases. In the investigated systems, the choice of a curing agent can change the glass transition temperature by at least 70 °C. The obtained results are in a good agreement with an earlier study employing other techniques. Finally, we assess the influence of the direction of mesogen alignment on the dielectric properties of one selected system, where a global order was induced by applying an external magnetic field in the course of curing.

  17. Ultrathin ZnO interfacial passivation layer for atomic layer deposited ZrO2 dielectric on the p-In0.2Ga0.8As substrate

    Science.gov (United States)

    Liu, Chen; Lü, Hongliang; Yang, Tong; Zhang, Yuming; Zhang, Yimen; Liu, Dong; Ma, Zhenqiang; Yu, Weijian; Guo, Lixin

    2018-06-01

    Interfacial and electrical properties were investigated on metal-oxidesemiconductor capacitors (MOSCAPs) fabricated with bilayer ZnO/ZrO2 films by atomic layer deposition (ALD) on p-In0.2Ga0.8As substrates. The ZnO passivated In0.2Ga0.8As MOSCAPs have exhibited significantly improved capacitance-voltage (C-V) characteristics with the suppressed "stretched out" effect, increased accumulation capacitance and reduced accumulation frequency dispersion as well as the lower gate leakage current. In addition, the interface trap density (Dit) estimated by the Terman method was decreased dramatically for ZnO passivated p-In0.2Ga0.8As. The inherent mechanism is attributed to the fact that an ultrathin ZnO IPL employed by ALD prior to ZrO2 dielectric deposition can effectively suppress the formation of defect-related low-k oxides and As-As dimers at the interface, thus effectively improving the interface quality by largely removing the border traps aligned near the valence band edge of the p-In0.2Ga0.8As substrate.

  18. Dielectric properties of PMMA/Soot nanocomposites.

    Science.gov (United States)

    Clayton, Lanetra M; Cinke, Martin; Meyyappan, M; Harmon, Julie P

    2007-07-01

    Dielectric analysis (DEA) of relaxation behavior in poly(methyl methacrylate) (PMMA) soot nanocomposites is described herein. The soot, an inexpensive material, consists of carbon nanotubes, amorphous and graphitic carbon and metal particles. Results are compared to earlier studies on PMMA/multi-walled nanotube (MWNT) composites and PMMA/single-walled nanotube (SWNT) composites. The beta relaxation process appeared to be unaffected by the presence of the soot, as was noted earlier in nanotube composites. The gamma relaxation region in PMMA, normally dielectrically inactive, was "awakened" in the PMMA/soot composite. This occurrence is consistent with previously published data on nanotube composites. The dielectric permittivity, s', increased with soot content. The sample with 1% soot exhibited a permittivity (at 100 Hz and 25 degrees C) of 7.3 as compared to 5.1 for neat PMMA. Soot increased the dielectric strength, deltaE, of the composites. The 1% soot sample exhibited a dielectric strength of 6.38, while the neat PMMA had a value of 2.95 at 40 degrees C. The symmetric broadening term (alpha) was slightly higher for the 1% composite at temperatures near the secondary relaxation and near the primary relaxation, but all samples deviated from symmetrical semi-circular behavior (alpha = 1). The impact of the soot filler is seen more clearly in dielectric properties than in mechanical properties studies conducted earlier.

  19. Dielectric loss against piezoelectric power harvesting

    Science.gov (United States)

    Liang, Junrui; Shu-Hung Chung, Henry; Liao, Wei-Hsin

    2014-09-01

    Piezoelectricity is one of the most popular electromechanical transduction mechanisms for constructing kinetic energy harvesting systems. When a standard energy harvesting (SEH) interface circuit, i.e., bridge rectifier plus filter capacitor, is utilized for collecting piezoelectric power, the previous literature showed that the power conversion can be well predicted without much consideration for the effect of dielectric loss. Yet, as the conversion power gets higher by adopting power-boosting interface circuits, such as synchronized switch harvesting on inductor (SSHI), the neglect of dielectric loss might give rise to deviation in harvested power estimation. Given the continuous progress on power-boosting interface circuits, the role of dielectric loss in practical piezoelectric energy harvesting (PEH) systems should receive attention with better evaluation. Based on the integrated equivalent impedance network model, this fast track communication provides a comprehensive study on the susceptibility of harvested power in PEH systems under different conditions. It shows that, dielectric loss always counteracts piezoelectric power harvesting by causing charge leakage across piezoelectric capacitance. In particular, taking corresponding ideal lossless cases as references, the counteractive effect might be aggravated under one of the five conditions: larger dielectric loss tangent, lower vibration frequency, further away from resonance, weaker electromechanical coupling, or using power-boosting interface circuit. These relationships are valuable for the study of PEH systems, as they not only help explain the role of dielectric loss in piezoelectric power harvesting, but also add complementary insights for material, structure, excitation, and circuit considerations towards holistic evaluation and design for practical PEH systems.

  20. Dielectric silicone elastomers with mixed ceramic nanoparticles

    International Nuclear Information System (INIS)

    Stiubianu, George; Bele, Adrian; Cazacu, Maria; Racles, Carmen; Vlad, Stelian; Ignat, Mircea

    2015-01-01

    Highlights: • Composite ceramics nanoparticles (MCN) with zirconium dioxide and lead zirconate. • Dielectric elastomer films wDith PDMS matrix and MCN as dielectric filler. • Hydrophobic character—water resistant and good flexibility specific to siloxanes. • Increased value of dielectric constant with the content of MCN in dielectric films. • Increased energy output from uniaxial deformation of the dielectric elastomer films. - Abstract: A ceramic material consisting in a zirconium dioxide-lead zirconate mixture has been obtained by precipitation method, its composition being proved by wide angle X-ray powder diffraction and energy-dispersive X-ray spectroscopy. The average diameter of the ceramic particles ranged between 50 and 100 nm, as revealed by transmission electron microscopy images. These were surface treated and used as filler for a high molecular mass polydimethylsiloxane-α,ω-diol (Mn = 450,000) prepared in laboratory, the resulted composites being further processed as films and crosslinked. A condensation procedure, unusual for polydimethylsiloxane having such high molecular mass, with a trifunctional silane was approached for the crosslinking. The effect of filler content on electrical and mechanical properties of the resulted materials was studied and it was found that the dielectric permittivity of nanocomposites increased in line with the concentration of ceramic nanoparticles

  1. Dielectric silicone elastomers with mixed ceramic nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Stiubianu, George, E-mail: george.stiubianu@icmpp.ro [“Petru Poni” Institute of Macromolecular Chemistry, Aleea Gr. Ghica Voda 41A, Iasi 700487 (Romania); Bele, Adrian; Cazacu, Maria; Racles, Carmen; Vlad, Stelian [“Petru Poni” Institute of Macromolecular Chemistry, Aleea Gr. Ghica Voda 41A, Iasi 700487 (Romania); Ignat, Mircea [National R& D Institute for Electrical Engineering ICPE-CA Bucharest, Splaiul Unirii 313, District 3, Bucharest 030138 (Romania)

    2015-11-15

    Highlights: • Composite ceramics nanoparticles (MCN) with zirconium dioxide and lead zirconate. • Dielectric elastomer films wDith PDMS matrix and MCN as dielectric filler. • Hydrophobic character—water resistant and good flexibility specific to siloxanes. • Increased value of dielectric constant with the content of MCN in dielectric films. • Increased energy output from uniaxial deformation of the dielectric elastomer films. - Abstract: A ceramic material consisting in a zirconium dioxide-lead zirconate mixture has been obtained by precipitation method, its composition being proved by wide angle X-ray powder diffraction and energy-dispersive X-ray spectroscopy. The average diameter of the ceramic particles ranged between 50 and 100 nm, as revealed by transmission electron microscopy images. These were surface treated and used as filler for a high molecular mass polydimethylsiloxane-α,ω-diol (Mn = 450,000) prepared in laboratory, the resulted composites being further processed as films and crosslinked. A condensation procedure, unusual for polydimethylsiloxane having such high molecular mass, with a trifunctional silane was approached for the crosslinking. The effect of filler content on electrical and mechanical properties of the resulted materials was studied and it was found that the dielectric permittivity of nanocomposites increased in line with the concentration of ceramic nanoparticles.

  2. Effect of combined external uniaxial stress and dc bias on the dielectric property of BaTiO3-based dielectrics in multilayer ceramic capacitor: thermodynamics and experiments

    International Nuclear Information System (INIS)

    Yang Gang; Yue Zhenxing; Sun Tieyu; Gou Huanlin; Li Longtu

    2008-01-01

    The dielectric properties of (Nb, Y)-doped BaTiO 3 in a multilayer ceramic capacitor (MLCC) under combined external uniaxial compressive stress and dc bias field were investigated at room temperature by using a modified Ginsburg-Landau-Devonshire thermodynamic theory and the dielectric measurement. It is found that although dc bias decreases the dielectric properties dominantly, the influence of the external uniaixial compressive stress should not be neglected. When applied along a direction perpendicular to the internal electrode layer in the MLCC, the external uniaixal compressive stress will strengthen the negative effect of dc bias. In contrast, the external uniaxial compressive stress along a direction parallel to the internal electrode layer in the MLCC will increase the dielectric permittivity under dc bias field, i.e. improve the ε-V response of the MLCC. Furthermore, although there is a difference between the calculated permittivity and the measured permittivity, the effects of the combined external uniaxial compressive stress and dc bias field on the dielectric permittivity described through two approaches are in good agreement

  3. The Study of Electrical Properties for Multilayer La2O3/Al2O3 Dielectric Stacks and LaAlO3 Dielectric Film Deposited by ALD.

    Science.gov (United States)

    Feng, Xing-Yao; Liu, Hong-Xia; Wang, Xing; Zhao, Lu; Fei, Chen-Xi; Liu, He-Lei

    2017-12-01

    The capacitance and leakage current properties of multilayer La 2 O 3 /Al 2 O 3 dielectric stacks and LaAlO 3 dielectric film are investigated in this paper. A clear promotion of capacitance properties is observed for multilayer La 2 O 3 /Al 2 O 3 stacks after post-deposition annealing (PDA) at 800 °C compared with PDA at 600 °C, which indicated the recombination of defects and dangling bonds performs better at the high-k/Si substrate interface for a higher annealing temperature. For LaAlO 3 dielectric film, compared with multilayer La 2 O 3 /Al 2 O 3 dielectric stacks, a clear promotion of trapped charges density (N ot ) and a degradation of interface trap density (D it ) can be obtained simultaneously. In addition, a significant improvement about leakage current property is observed for LaAlO 3 dielectric film compared with multilayer La 2 O 3 /Al 2 O 3 stacks at the same annealing condition. We also noticed that a better breakdown behavior for multilayer La 2 O 3 /Al 2 O 3 stack is achieved after annealing at a higher temperature for its less defects.

  4. Nonlinear dielectric response in ferroelectric thin films

    Directory of Open Access Journals (Sweden)

    Lente, M. H.

    2004-08-01

    Full Text Available Electrical permittivity dependence on electric external bias field was investigated in PZT thin films. The results revealed the existence of two mechanisms contributing to the electrical permittivity. The first one was related to the domain reorientation, which was responsible for a strong no linear dielectric behavior, acting only during the poling process. The second mechanism was associated with the domain wall vibrations, which presented a reasonable linear electrical behavior with the applied bias field, contributing always to the permittivity independently of the poling state of the sample. The results also indicated that the gradual reduction of the permittivity with the increase of the bias field strength may be related to the gradual bending of the domain walls. It is believed that the domain wall bending induces a hardening and/or a thinning of the walls, thus reducing the electrical permittivity. A reinterpretation of the model proposed in the literature to explain the dielectric characteristics of ferroelectric materials at high electric field regime is proposed.

    Se ha estudiado la dependencia de la permitividad eléctrica con un campo bias externo en láminas delgadas de PZT. Los resultados revelaron la existencia de dos mecanismos que contribuyen a la permitividad eléctrica. El primero está relacionado con la reorientación de dominios, actúa sólo durante el proceso de polarización y es responsable de un comportamiento dieléctrico fuertemente no lineal. El segundo mecanismo se asocia a las vibraciones de las paredes de dominio, presentando un comportamiento eléctrico razonablemente lineal con el campo bias aplicado, contribuyendo siempre a la permitividad independientemente del estado de polarización de la muestra. Los resultados indicaron también que la reducción gradual de la permitividad con el aumento de la fuerza del campo bias podría estar relacionada con el “bending” gradual de las paredes de dominio

  5. Numerical simulation of the leaky dielectric microdroplet generation in electric fields

    Science.gov (United States)

    Kamali, Reza; Manshadi, Mohammad Karim Dehghan

    2016-07-01

    Microdroplet generation has a vast range of applications in the chemical, biomedical, and biological sciences. Several devices are applied to produce microdroplets, such as Co-flow, T-junction and Flow-focusing. The important point in the producing process is controlling the separated fluid volume in these devices. On the other hand, a large number of liquids, especially aqueous one, are influenced by electric or magnetic fields. As a consequence, an electric field could be used in order to affect the separated fluid volume. In this study, effects of an electric field on the microdroplet generation in a Co-flow device are investigated numerically. Furthermore, effects of some electrical properties such as permittivity on the separating process of microdroplets are studied. Leaky dielectric and perfect dielectric models are used in this investigation. According to the results, in the microdroplet generating process, leaky dielectric fluids show different behaviors, when an electric field is applied to the device. In other words, in a constant electric field strength, the volume of generated microdroplets can increase or decrease, in comparison with the condition without the electric field. However, for perfect dielectric fluids, droplet volume always decreases with increasing the electric field strength. In order to validate the numerical method of this study, deformation of a leaky dielectric droplet in an electric field is investigated. Results are compared with Taylor theoretical model.

  6. Dielectric behavior of samarium-doped BaZr0.2Ti0.8O3 ceramics

    International Nuclear Information System (INIS)

    Li, Yuanliang; Wang, Ranran; Ma, Xuegang; Li, Zhongqiu; Sang, Rongli; Qu, Yuanfang

    2014-01-01

    Graphical abstract: - Highlights: • We investigate dielectric properties and phase transition of Sm 3+ -doped BaZr 0.2 Ti 0.8 O 3 ceramics. • The additive amount of Sm 2 O 3 can greatly affect the dielectric properties. • The materials undergo a diffuse type ferroelectric phase transition. • There is an alternation of substitution preference of Sm 3+ ion for the host cations in perovskite lattice. - Abstract: The dielectric properties and phase transition of Sm 3+ -doped BaZr 0.2 Ti 0.8 O 3 (BZT20) ceramics were investigated. Room temperature X-ray diffraction study suggested that the compositions had single-phase cubic symmetry. Microstructure studies showed that the grain size decreased and that the Sm 2 O 3 amount markedly affected the dielectric properties of BZT20. A dielectric constant of 5700 at 0.2 mol% Sm 2 O 3 and a dissipation factor of only 0.0011 at 2 mol% Sm 2 O 3 were observed, indicating that BZT20 had significant potential applications. Moreover, the dielectric constant, dissipation factor, phase-transition temperature, and maximum dielectric constant increased with increased Sm 2 O 3 amount at ≤0.2 mol% Sm 2 O 3 but decreased with increased Sm 2 O 3 amount at >0.2 mol% Sm 2 O 3

  7. Research Update: Polyimide/CaCu3Ti4O12 nanofiber functional hybrid films with improved dielectric properties

    Directory of Open Access Journals (Sweden)

    Yang Yang

    2013-11-01

    Full Text Available This work reports the excellent dielectric properties of polyimide (PI embedded with CaCu3Ti4O12 (CCTO nanofibers. The dielectric behaviors were investigated over a frequency of 100 Hz–1 MHz. It is shown that embedding CCTO nanofibers with high aspect ratio (67 is an effective means to enhance the dielectric permittivity and reduce the percolation threshold. The dielectric permittivity of PI/CCTO nanofiber composites is 85 with 1.5 vol.% loading of filler, also the dielectric loss is only 0.015 at 100 Hz. Monte Carlo simulation was used to investigate the percolation threshold of CCTO nanofibers reinforced polyimide matrix by using excluded volume theory and soft, hard-core models. The results are in good agreement with the percolation theory and the hard-core model can well explain the percolation phenomena in PI/CCTO nanofiber composites. The dielectric properties of the composites will meet the practical requirements for the application in high dielectric constant capacitors and high energy density materials.

  8. Imaging axial and radial electric field components in dielectric targets under plasma exposure

    NARCIS (Netherlands)

    Slikboer, E.T.; Sobota, A.; Guaitella, O.; Garcia-Caurel, E.

    2018-01-01

    This work presents new ways to investigate the individual electric field components in a dielectric target induced by a non thermal atmospheric pressure plasma jet. Mueller polarimetry is applied to investigate electro-optic crystals under exposure of guided ionization waves produced by a plasma

  9. Study made of dielectric properties of promising materials for cryogenic capacitors

    Science.gov (United States)

    Mathes, K. N.; Minnich, S. H.

    1967-01-01

    Experimental investigations were conducted to determine dielectric properties of promising materials for cryogenic capacitors to be used in energy storage and pulse applications. The three classes of materials investigated were inorganic bonded ferroelectric materials, anodic coatings on metal foils, and polar low temperature liquids.

  10. Quality factor of an electrically small magnetic dipole antenna with magneto-dielectric core

    DEFF Research Database (Denmark)

    Kim, Oleksiy S.; Breinbjerg, Olav

    2010-01-01

    In this work, we investigate the radiation Q of electrically small magnetic dipole antennas with magneto-dielectric core versus the antenna electrical size, permittivity and permeability of the core. The investigation is based on the exact theory for a spherical magnetic dipole antenna...

  11. STRUCTURAL CHARACTERISTICS & DIELECTRIC PROPERTIES OF TANTALUM OXIDE DOPED BARIUM TITANATE BASED MATERIALS

    Directory of Open Access Journals (Sweden)

    Md. Fakhrul Islam

    2013-01-01

    Full Text Available In this research, the causal relationship between the dielectric properties and the structural characteristics of 0.5 & 1.0 mole % Ta2O5 doped BaTiO3 based ceramic materials were investigated under different sintering conditions. Dielectric properties and microstructure of BaTio3 ceramics were significantly influenced by the addition of a small amount of Ta2O5. Dielectric properties were investigated by measuring the dielectric constant (k as a function of temperature and frequency. Percent theoretical density (%TD above 90 % was achieved for 0.5 and 1.0 mole %Ta2O5 doped BaTiO3. It was observed that the grain size decreased markedly above a doping concentration of 0.5 mole % Ta2O5. Although fine grain size down to 200 - 300 nm was attained, grain sizes in the range of 1-1.8µm showed the most alluring properties. The fine-grain quality and high density of the Ta2O5 doped BaTiO3 ceramic resulted in tenfold increase of dielectric constant. Stable value of dielectric constant as high as 13000 - 14000 was found in the temperature range of 55 to 80 °C, for 1.0 mole % Ta2O5 doped samples with corresponding shift of Curie point to ~82 °C. Experiments divulged that incorporation of a proper content of Ta2O5 in BaTiO3 could control the grain growth, shift the Curie temperature and hence significantly improve the dielectric property of the BaTiO3 ceramics.

  12. Structural Characteristics & Dielectric Properties of Tantalum Oxide Doped Barium Titanate Based Materials

    Directory of Open Access Journals (Sweden)

    Rubayyat Mahbub

    2012-11-01

    Full Text Available In this research, the causal relationship between the dielectric properties and the structural characteristics of 0.5 & 1.0 mol% Ta2O5 doped BaTiO3 based ceramic materials were investigated under different sintering conditions. Dielectric properties and microstructure of BaTio3 ceramics were significantly influenced by the addition of a small amount of Ta2O5. Dielectric properties were investigated by measuring the dielectric constant (k as a function of temperature and frequency. Percent theoretical density (%TD above 90% was achieved for 0.5 and 1.0 mol% Ta2O5 doped BaTiO3. It was observed that the grain size decreased markedly above a doping concentration of 0·5 mol% Ta2O5. Although fine grain size down to 200-300nm was attained, grain sizes in the range of 1-1.8µm showed the most alluring properties. The fine-grain quality and high density of the Ta2O5 doped BaTiO3 ceramic resulted in tenfold increase of dielectric constant. Stable value of dielectric constant as high as 13000-14000 was found in the temperature range of  55 to 80°C, for 1.0 mol% Ta2O5 doped samples with corresponding shift of Curie point to ~82°C. Experiments divulged that incorporation of a proper content of Ta2O5 in BaTiO3 could control the grain growth, shift the Curie temperature and hence significantly improve the dielectric property of the BaTiO3 ceramics.

  13. Influence of Zn doping on structural, optical and dielectric properties of LaFeO3

    Science.gov (United States)

    Manzoor, Samiya; Husain, Shahid

    2018-05-01

    The effect of Zn doping on structural, optical and dielectric properties of nano-crystalline LaFe1‑xZnxO3 (0.0 ≤ x ≤ 0.3) samples have been investigated. These samples are synthesized using conventional solid state reaction route. X-ray diffraction patterns with Rietveld analysis confirm the single phase nature of samples. Further, the sample formation has been confirmed by FTIR spectroscopy. All the samples are formed in orthorhombic crystal symmetry with Pbnm space group. The average crystallite sizes, calculated from the Scherer’s formula, lie in the range below 50 nm. Rietveld refinement technique is used to determine lattice parameters, bond lengths and unit cell volume. Williamson-Hall analysis has been performed to calculate the crystallite size and lattice strain. Crystallite sizes are found to be of nanometer range while the strain is of the order of 10‑3. Zn doping leads to the expansion of volume due to the tensile strain. Optical bandgap has been determined from Kubelka-Munk function using Tauc’s relation. Zinc doping in LaFeO3 leads to decrease in optical bandgap. Dielectric constant as a function of frequency is measured in the frequency range of 75 kHz–5 MHz. The dielectric behavior has been investigated by analyzing ‘universal dielectric response’ (UDR) model. The dielectric constant (ε‧) shows colossal value with Zn doping in the whole frequency range. However, the imaginary part (ε″) shows relaxational behavior which may be attributed to the strong correlation that exists between conduction mechanism and dielectric behavior in ferrites. Cole-Cole analysis has been done that confirms the dielectric material does not follow the ideal Debye theory but shows distribution of relaxation times. The a.c conductivity increases with frequency and with Zn doping due to the increased polaron hopping.

  14. Temperature Effects on a-IGZO Thin Film Transistors Using HfO2 Gate Dielectric Material

    OpenAIRE

    Lin, Yu-Hsien; Chou, Jay-Chi

    2014-01-01

    This study investigated the temperature effect on amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) using hafnium oxide (HfO2) gate dielectric material. HfO2 is an attractive candidate as a high-κ dielectric material for gate oxide because it has great potential to exhibit superior electrical properties with a high drive current. In the process of integrating the gate dielectric and IGZO thin film, postannealing treatment is an essential process for completing the chem...

  15. Wakefield excitation by a sequence of relativistic electron bunches in dielectric waveguides of rectangular cross-section of various configurations

    International Nuclear Information System (INIS)

    Kiselev, V.A.; Linnik, A.F.; Mirnyj, V.I.; Onishchenko, I.N.; Sotnikov, G.V.; Uskov, V.V.

    2008-01-01

    The possibility to enhance the efficiency of wake wave excitation in dielectric waveguides of rectangular cross-section was investigated by increase of electron bunches coupling with excited wakefield that was achieved by decrease of transit channel cross-section. At that for each configuration the required changes of dielectric plates size were made to for maintain the coincidence concurrence of bunch repetition frequency and frequency of the principal transverse mode of the corresponding dielectric waveguide. It is established, the decrease of transit channel leading to essential changing of topography of total field excited wake wave

  16. Radiation Characteristics Enhancement of Dielectric Resonator Antenna Using Solid/Discrete Dielectric Lenses

    Directory of Open Access Journals (Sweden)

    H. A. E. Malhat

    2015-02-01

    Full Text Available The radiation characteristics of the dielectric resonator antennas (DRA is enhanced using different types of solid and discrete dielectric lenses. One of these approaches is by loading the DRA with planar superstrate, spherical lens, or by discrete lens (transmitarray. The dimensions and dielectric constant of each lens are optimized to maximize the gain of the DRA. A comparison between the radiations characteristics of the DRA loaded with different lenses are introduced. The design of the dielectric transmitarray depends on optimizing the heights of the dielectric material of the unit cell. The optimized transmitarray achieves 7 dBi extra gain over the single DRA with preserving the circular polarization. The proposed antenna is suitable for various applications that need high gain and focused antenna beam.

  17. Electro-physical properties of a Si-based MIS structure with a low-k SiOC(-H) film

    Energy Technology Data Exchange (ETDEWEB)

    Zakirov, Anvar Sagatovich; Navamathavan, Rangaswamy; Kim, Seung Hyun; Jang, Yong Jun; Jung, An Soo; Choi, Chi Kyu [Cheju National University, Jeju (Korea, Republic of)

    2006-09-15

    SiOC(-H) films with low dielectric constants have been prepared by using plasma enhanced chemical vapor deposition with a mixture of methyltriethoxysilane and oxygen precursors. The C-V characteristics of the structures, Al/SiOC(-H)/p-Si(100), were studied in the forward and the reverse directions by applying a polarizing potential. We found that the ratio of the maximum to the minimum capacitance (C{sub ma}x{sub /}C{sub min}) depended on the [MTES/(MTES+O{sub 2})] flow rate ratio. Annealed samples exhibited even greater reductions of the maximum capacitance and the dielectric constant of the SiOC(-H) samples. After annealing at 400 .deg. C, the measurement in the reverse direction revealed an interesting behavior in the form of strongly pronounced 'steps'. The bonds between Si-O and the -CH{sub 3} group reduced the surface charge density, and the distribution of the surface charge density depended on [MTES/(MTES+O{sub 2})] flow rate ratio and the annealing temperature because the fixed positive (Si-CH{sub 3}){sup +} and negative (Si-O){sup -} changed the configuration at the SiOC(-H)/p-Si(100) interface. The SiOC(-H) film had donor (O{sub 2}) and acceptor (Si-CH{sub 3} -groups) levels, and the electronic process at the SiOC(-H)/p-Si(100) interface was defined by the (Si-CH{sub 3}){sup +} and the (Si-O){sup -} bonds.

  18. Comparison of x-ray computed tomography, through-transmission ultrasound, and low-kV x-ray imaging for characterizing green-state ceramics

    International Nuclear Information System (INIS)

    Roberts, R.A.; Ellingson, W.A.; Vannier, M.W.

    1985-06-01

    Green-state MgAl 2 O 4 compact disk specimens have been studied by x-ray computed tomography (CT), through-transmission pulsed ultrasound, and low-kV x-ray imaging to compare the abilities of these nondestructive evaluation (NDE) methods to detect flaws and density variations. X-ray computed tomographic images were obtained from a 125-kV (peak) imaging system with a 512 x 512 matrix and a pixel size of 100 μm. A 3- to 10- MHz focused-beam ultrasonic transducer was used, together with special immersion techniques, to obtain topographical maps of acoustic attenuation and phase velocity; a 30 x 30 matrix was used in the ultrasonic scans. A 35-kV x-ray system with high-resolution type RR film was used to obtain conventional radiographs. Large-scale nonuniform density gradients were detected with CT and ultrasonics in supposedly uniform ceramic disks. In addition, inclusions in the green-state samples were detected by all three methods, with each method providing certain advantages. The influence of grain structure and other ceramic powder characteristics will be examined in the future. 5 refs., 9 figs

  19. Modeling slug tests in unconfined aquifers with both oscillatory and overdamped responses, and with low-K and high-K skin effects

    Science.gov (United States)

    Thoma, M. J.; Malama, B.; Barrash, W.; Bohling, G.; Butler, J. J.

    2009-12-01

    We extend the models for slug tests developed by Hyder et al. (1994) and Butler and Zhan (2004) to obtain a single general model for slug tests in unconfined aquifers in partially penetrating wells with a near-well disturbed zone (skin). The full range of responses, oscillatory to overdamped, is considered since both types of responses are common in wells in unconsolidated coarse fluvial aquifers, and others. The general semi-analytical solution allows for skin and formation storage as well as anisotropy in skin and formation hydraulic conductivity (K). The water table is treated as a fixed head boundary so the solution is applicable for wells screened below the water table. The model is validated by comparison with other models and by matching field data from unconfined fluvial aquifers at sites in Nebraska (MSEA) and Idaho (BHRS). We examine the effects of varying skin K and skin thickness to simulate the impact of a near-well disturbed zone that is lower (damage) or higher (filter pack) K than the formation. Results indicate that, for a given set of measured behavior at an example test zone, minor progressive decreases in estimated formation K occur with increases in assumed skin K, and moderate increases in estimated formation K occur with decreases in assumed skin K. Major increases (orders of magnitude) in estimated formation K occur with increased thickness of low-K skin. The importance of incorporating a finite-thickness representation of the skin, rather than the conventional infinitely thin representation, is also addressed.

  20. Chemical interaction and adhesion characteristics at the interface of metals (Cu, Ta) and low-k cyclohexane-based plasma polymer (CHexPP) films

    International Nuclear Information System (INIS)

    Kim, K.J.; Kim, K.S.; Lee, N.-E.; Choi, J.; Jung, D.

    2001-01-01

    Chemical interaction and adhesion characteristics between metals (Cu, Ta) and low-k plasma-treated cyclohexane-based plasma polymer (CHexPP) films were studied. In order to generate new functional groups that may contribute to the improvement of adhesion between metal and plasma polymer, we performed O 2 , N 2 , and H 2 /He mixture plasma treatment on the surfaces of CHexPP films. Chemical interactions at the interface between metals (Cu, Ta) and plasma-treated CHexPP films were analyzed by x-ray photoelectron spectroscopy. The effect of plasma treatment and thermal annealing on the adhesion characteristics was measured by a tape test and scratch test. The formation of new binding states on the surface of plasma-treated CHexPP films improved adhesion characteristics between metals and CHexPP films. Thermal annealing improves the adhesion property of Cu/CHexPP films, but degrades the adhesion property of Ta/CHexPP films

  1. Static and Dynamic Water Motion-Induced Instability in Oxide Thin-Film Transistors and Its Suppression by Using Low-k Fluoropolymer Passivation.

    Science.gov (United States)

    Choi, Seungbeom; Jo, Jeong-Wan; Kim, Jaeyoung; Song, Seungho; Kim, Jaekyun; Park, Sung Kyu; Kim, Yong-Hoon

    2017-08-09

    Here, we report static and dynamic water motion-induced instability in indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) and its effective suppression with the use of a simple, solution-processed low-k (ε ∼ 1.9) fluoroplastic resin (FPR) passivation layer. The liquid-contact electrification effect, in which an undesirable drain current modulation is induced by a dynamic motion of a charged liquid such as water, can cause a significant instability in IGZO TFTs. It was found that by adopting a thin (∼44 nm) FPR passivation layer for IGZO TFTs, the current modulation induced by the water-contact electrification was greatly reduced in both off- and on-states of the device. In addition, the FPR-passivated IGZO TFTs exhibited an excellent stability to static water exposure (a threshold voltage shift of +0.8 V upon 3600 s of water soaking), which is attributed to the hydrophobicity of the FPR passivation layer. Here, we discuss the origin of the current instability caused by the liquid-contact electrification as well as various static and dynamic stability tests for IGZO TFTs. On the basis of our findings, we believe that the use of a thin, solution-processed FPR passivation layer is effective in suppressing the static and dynamic water motion-induced instabilities, which may enable the realization of high-performance and environment-stable oxide TFTs for emerging wearable and skin-like electronics.

  2. High-k 3D-barium titanate foam/phenolphthalein poly(ether sulfone)/cyanate ester composites with frequency-stable dielectric properties and extremely low dielectric loss under reduced concentration of ceramics

    Science.gov (United States)

    Zheng, Longhui; Yuan, Li; Guan, Qingbao; Liang, Guozheng; Gu, Aijuan

    2018-01-01

    Higher dielectric constant, lower dielectric loss and better frequency stability have been the developing trends for high dielectric constant (high-k) materials. Herein, new composites have been developed through building unique structure by using hyperbranched polysiloxane modified 3D-barium titanate foam (BTF) (BTF@HSi) as the functional fillers and phenolphthalein poly(ether sulfone) (cPES)/cyanate ester (CE) blend as the resin matrix. For BTF@HSi/cPES/CE composite with 34.1 vol% BTF, its dielectric constant at 100 Hz is as high as 162 and dielectric loss is only 0.007; moreover, the dielectric properties of BTF@HSi/cPES/CE composites exhibit excellent frequency stability. To reveal the mechanism behind these attractive performances of BTF@HSi/cPES/CE composites, three kinds of composites (BTF/CE, BTF/cPES/CE, BTF@HSi/CE) were prepared, their structure and integrated performances were intensively investigated and compared with those of BTF@HSi/cPES/CE composites. Results show that the surface modification of BTF is good for preparing composites with improved thermal stability; while introducing flexible cPES to CE is beneficial to fabricate composites with good quality through effectively blocking cracks caused by the stress concentration, and then endowing the composites with good dielectric properties at reduced concentration of ceramics.

  3. Sintering and dielectric properties of a technical porcelain prepared from economical natural raw materials

    Directory of Open Access Journals (Sweden)

    S. Kasrani

    Full Text Available Abstract In this study, the production of a technical porcelain, for the ceramic dielectric applications by using economical natural raw materials, was investigated. The basic porcelain composition was selected consisting of 30 wt% kaolin, 45 wt% potash-feldspar and 25 wt% quartz. The obtained phases in the sintered samples were investigated by X-ray diffraction, Fourier transform infrared spectroscopy analysis, and scanning electron microscopy images. It has been confirmed by these techniques that the main crystalline phases were quartz and mullite. Dielectric measurements of technical porcelains have been carried out at 1 kHz from room temperature to 200 °C. The dielectric constant, loss factor, dielectric loss tangent, and resistivity of the porcelain sample sintered at 1160 °C were 22-25, 0.32-1.80, 0.006-0.07, and 0.2-9 x 1013 Ω.cm, respectively. The value of dielectric constant was significantly high when compared to that of conventional porcelains which did not exceed generally 9.

  4. Sintering and dielectric properties of a technical porcelain prepared from economical natural raw materials

    Energy Technology Data Exchange (ETDEWEB)

    Kasrani, S.; Harabi, A.; Barama, S.-E.; Foughali, L.; Benhassine, M. T., E-mail: souad478@yahoo.fr, E-mail: harabi52@gmail.com, E-mail: sebarama@usa.com, E-mail: foughali_lazhar@yahoo.fr, E-mail: mtb25dz@gmail.com [Ceramics Lab. Mentouri University of Constantine (Algeria); Aldhayan, D.M., E-mail: aldhayan@ksu.edu.sa [Chemistry Department, Riyadh, King Saud University (Saudi Arabia)

    2016-10-15

    In this study, the production of a technical porcelain, for the ceramic dielectric applications by using economical natural raw materials, was investigated. The basic porcelain composition was selected consisting of 30 wt% kaolin, 45 wt% potash-feldspar and 25 wt% quartz. The obtained phases in the sintered samples were investigated by X-ray diffraction, Fourier transform infrared spectroscopy analysis, and scanning electron microscopy images. It has been confirmed by these techniques that the main crystalline phases were quartz and mullite. Dielectric measurements of technical porcelains have been carried out at 1 kHz from room temperature to 200 °C. The dielectric constant, loss factor, dielectric loss tangent, and resistivity of the porcelain sample sintered at 1160 °C were 22-25, 0.32-1.80, 0.006-0.07, and 0.2-9 x 10{sup 13} Ω.cm, respectively. The value of dielectric constant was significantly high when compared to that of conventional porcelains which did not exceed generally 9. (author)

  5. Depolarization current relaxation process of insulating dielectrics after corona poling under different charging conditions

    Directory of Open Access Journals (Sweden)

    J. W. Zhang

    2017-10-01

    Full Text Available As an insulating dielectric, polyimide is favorable for the application of optoelectronics, electrical insulation system in electric power industry, insulating, and packaging materials in space aircraft, due to its excellent thermal, mechanical and electrical insulating stability. The charge storage profile of such insulating dielectric is utmost important to its application, when it is exposed to electron irradiation, high voltage corona discharge or other treatments. These treatments could induce changes in physical and chemical properties of treated samples. To investigate the charge storage mechanism of the insulating dielectrics after high-voltage corona discharge, the relaxation processes responsible for corona charged polyimide films under different poling conditions were analyzed by the Thermally Stimulated Discharge Currents method (TSDC. In the results of thermal relaxation process, the appearance of various peaks in TSDC spectra provided a deep insight into the molecular status in the dielectric material and reflected stored space charge relaxation process in the insulating polymers after corona discharge treatments. Furthermore, the different space charge distribution status under various poling temperature and different discharge voltage level were also investigated, which could partly reflect the influence of the ambiance condition on the functional dielectrics after corona poling.

  6. Depolarization current relaxation process of insulating dielectrics after corona poling under different charging conditions

    Science.gov (United States)

    Zhang, J. W.; Zhou, T. C.; Wang, J. X.; Yang, X. F.; Zhu, F.; Tian, L. M.; Liu, R. T.

    2017-10-01

    As an insulating dielectric, polyimide is favorable for the application of optoelectronics, electrical insulation system in electric power industry, insulating, and packaging materials in space aircraft, due to its excellent thermal, mechanical and electrical insulating stability. The charge storage profile of such insulating dielectric is utmost important to its application, when it is exposed to electron irradiation, high voltage corona discharge or other treatments. These treatments could induce changes in physical and chemical properties of treated samples. To investigate the charge storage mechanism of the insulating dielectrics after high-voltage corona discharge, the relaxation processes responsible for corona charged polyimide films under different poling conditions were analyzed by the Thermally Stimulated Discharge Currents method (TSDC). In the results of thermal relaxation process, the appearance of various peaks in TSDC spectra provided a deep insight into the molecular status in the dielectric material and reflected stored space charge relaxation process in the insulating polymers after corona discharge treatments. Furthermore, the different space charge distribution status under various poling temperature and different discharge voltage level were also investigated, which could partly reflect the influence of the ambiance condition on the functional dielectrics after corona poling.

  7. Sintering and dielectric properties of a technical porcelain prepared from economical natural raw materials

    International Nuclear Information System (INIS)

    Kasrani, S.; Harabi, A.; Barama, S.-E.; Foughali, L.; Benhassine, M. T.; Aldhayan, D.M.

    2016-01-01

    In this study, the production of a technical porcelain, for the ceramic dielectric applications by using economical natural raw materials, was investigated. The basic porcelain composition was selected consisting of 30 wt% kaolin, 45 wt% potash-feldspar and 25 wt% quartz. The obtained phases in the sintered samples were investigated by X-ray diffraction, Fourier transform infrared spectroscopy analysis, and scanning electron microscopy images. It has been confirmed by these techniques that the main crystalline phases were quartz and mullite. Dielectric measurements of technical porcelains have been carried out at 1 kHz from room temperature to 200 °C. The dielectric constant, loss factor, dielectric loss tangent, and resistivity of the porcelain sample sintered at 1160 °C were 22-25, 0.32-1.80, 0.006-0.07, and 0.2-9 x 10 13 Ω.cm, respectively. The value of dielectric constant was significantly high when compared to that of conventional porcelains which did not exceed generally 9. (author)

  8. Reinforced poly(propylene oxide): a very soft and extensible dielectric electroactive polymer

    International Nuclear Information System (INIS)

    Goswami, K; Mazurek, P; Daugaard, A E; Skov, A L; Galantini, F; Gallone, G

    2013-01-01

    Poly(propylene oxide) (PPO), a novel soft elastomeric material, and its composites were investigated as a new dielectric electroactive polymer (EAP). The PPO networks were obtained from thiol-ene chemistry by photochemical crosslinking of α,ω-diallyl PPO with a tetra-functional thiol. The elastomer was reinforced with hexamethylenedisilazane treated fumed silica to improve the mechanical properties of PPO. The mechanical properties of PPO and composites thereof were investigated by shear rheology and stress–strain measurements. It was found that incorporation of silica particles improved the stability of the otherwise mechanically weak pure PPO network. Dielectric spectroscopy revealed high relative dielectric permittivity of PPO at 10 3 Hz of 5.6. The relative permittivity was decreased slightly upon addition of fillers, but remained higher than the commonly used acrylic EAP material VHB4910. The electromechanical actuation performance of both PPO and its composites showed properties as good as VHB4910 and a lower viscous loss. (paper)

  9. Reinforced poly(propylene oxide)- a very soft and extensible dielectric electroactive polymer

    DEFF Research Database (Denmark)

    Goswami, Kaustav; Galantini, F.; Mazurek, Piotr Stanislaw

    2013-01-01

    Poly(propylene oxide) (PPO), a novel soft elastomeric material, and its composites were investigated as a new dielectric electroactive polymer (EAP). The PPO networks were obtained from thiol-ene chemistry by photochemical crosslinking of ,!-diallyl PPO with a tetra-functional thiol. The elastomer...... was reinforced with hexamethylenedisilazane treated fumed silica to improve the mechanical properties of PPO. The mechanical properties of PPO and composites thereof were investigated by shear rheology and stress–strain measurements. It was found that incorporation of silica particles improved the stability...... of the otherwise mechanically weak pure PPO network. Dielectric spectroscopy revealed high relative dielectric permittivity of PPO at 103 Hz of 5.6. The relative permittivity was decreased slightly upon addition of fillers, but remained higher than the commonly used acrylic EAP material VHB4910...

  10. Radiation sensors based on the generation of mobile protons in organic dielectrics.

    Science.gov (United States)

    Kapetanakis, Eleftherios; Douvas, Antonios M; Argitis, Panagiotis; Normand, Pascal

    2013-06-26

    A sensing scheme based on mobile protons generated by radiation, including ionizing radiation (IonR), in organic gate dielectrics is investigated for the development of metal-insulator-semiconductor (MIS)-type dosimeters. Application of an electric field to the gate dielectric moves the protons and thereby alters the flat band voltage (VFB) of the MIS device. The shift in the VFB is proportional to the IonR-generated protons and, therefore, to the IonR total dose. Triphenylsulfonium nonaflate (TPSNF) photoacid generator (PAG)-containing poly(methyl methacrylate) (PMMA) polymeric films was selected as radiation-sensitive gate dielectrics. The effects of UV (249 nm) and gamma (Co-60) irradiations on the high-frequency capacitance versus the gate voltage (C-VG) curves of the MIS devices were investigated for different total dose values. Systematic improvements in sensitivity can be accomplished by increasing the concentration of the TPSNF molecules embedded in the polymeric matrix.

  11. Accelerating Dielectrics Design Using Thinking Machines

    Science.gov (United States)

    Ramprasad, R.

    2013-03-01

    High energy density capacitors are required for several pulsed power and energy storage applications, including food preservation, nuclear test simulations, electric propulsion of ships and hybrid electric vehicles. The maximum electrostatic energy that can be stored in a capacitor dielectric is proportional to its dielectric constant and the square of its breakdown field. The current standard material for capacitive energy storage is polypropylene which has a large breakdown field but low dielectric constant. We are involved in a search for new classes of polymers superior to polypropylene using first principles computations combined with statistical and machine learning methods. Essential to this search are schemes to efficiently compute the dielectric constant of polymers and the intrinsic dielectric breakdown field, as well as methods to determine the stable structures of new classes of polymers and strategies to efficiently navigate through the polymer chemical space offered by the periodic table. These methodologies have been combined with statistical learning paradigms in order to make property predictions rapidly, and promising classes of polymeric systems for energy storage applications have been identified. This work is being supported by the Office of Naval Research.

  12. Microstructure and dielectric properties of La2O3 doped Ti-rich barium strontium titanate ceramics for capacitor applications

    Directory of Open Access Journals (Sweden)

    Zhang Chen

    2018-03-01

    Full Text Available Microstructure and dielectric properties of La2O3 doped Ti-rich barium strontium titanate ceramics, prepared by solid state method, were investigated with non-stoichiometric level and various La2O3 content, using XRD, SEM and LCR measuring system. With an increase of non-stoichiometric level, the unit cell volumes of perovskite lattices for the single phase Ti-rich barium strontium titanate ceramics increased due to the decreasing A site vacancy concentration V″A. The unit cell volume increased and then decreased slightly with the increasing La2O3 content. Relatively high non-stoichiometric level and high La2O3 content in Ti-rich barium strontium titanate ceramics contributed to the decreased average grain size as well as fine grain size distribution, which correspondingly improved the temperature stability of the relative dielectric constant. The relative dielectric constant єrRT, dielectric loss tanδRT and the maximum relative dielectric constant єrmax decreased and then increased with the increasing non-stoichiometric level. With the increase of La2O3 doping content, the relative dielectric constant єrRT increased initially and then decreased. The maximum relative dielectric constant єrmax can be increased by applying low doping content of La2O3 in Ti-rich barium strontium titanate ceramics due to the increased spontaneous polarization.

  13. Recent Progress on Ferroelectric Polymer-Based Nanocomposites for High Energy Density Capacitors: Synthesis, Dielectric Properties, and Future Aspects.

    Science.gov (United States)

    Prateek; Thakur, Vijay Kumar; Gupta, Raju Kumar

    2016-04-13

    Dielectric polymer nanocomposites are rapidly emerging as novel materials for a number of advanced engineering applications. In this Review, we present a comprehensive review of the use of ferroelectric polymers, especially PVDF and PVDF-based copolymers/blends as potential components in dielectric nanocomposite materials for high energy density capacitor applications. Various parameters like dielectric constant, dielectric loss, breakdown strength, energy density, and flexibility of the polymer nanocomposites have been thoroughly investigated. Fillers with different shapes have been found to cause significant variation in the physical and electrical properties. Generally, one-dimensional and two-dimensional nanofillers with large aspect ratios provide enhanced flexibility versus zero-dimensional fillers. Surface modification of nanomaterials as well as polymers adds flavor to the dielectric properties of the resulting nanocomposites. Nowadays, three-phase nanocomposites with either combination of fillers or polymer matrix help in further improving the dielectric properties as compared to two-phase nanocomposites. Recent research has been focused on altering the dielectric properties of different materials while also maintaining their superior flexibility. Flexible polymer nanocomposites are the best candidates for application in various fields. However, certain challenges still present, which can be solved only by extensive research in this field.

  14. Multipolar modes in dielectric disk resonator for wireless power transfer

    Science.gov (United States)

    Song, Mingzhao; Belov, Pavel; Kapitanova, Polina

    2017-09-01

    We demonstrate a magnetic resonant WPT system based on dielectric disk resonators and investigated the WPT efficiency as a function of separation. It has been demonstrated that the power transfer can be achieved at different multipolar modes. The numerical study shows that the highest WPT efficiency of 99% can be obtained for the MQ mode in an ideal case. However, the efficiency of MQ mode decays much faster than the MD mode which suggests that a trade-off has to be made in the practical WPT system design.

  15. Directional interacting whispering-gallery modes in coupled dielectric microdisks

    International Nuclear Information System (INIS)

    Ryu, Jung-Wan; Lee, Soo-Young; Kim, Chil-Min; Park, Young-Jai

    2006-01-01

    We study the optical interaction in a coupled dielectric microdisks by investigating the splitting of resonance positions of interacting whispering-gallery modes (WGM's) and their pattern change, depending on the distance between the microdisks. It is shown that the interaction between the WGM's with odd parity about the y axis becomes appreciable at a distance less than a wavelength and causes directional emissions of the resulting interacting WGM's. The directionality of the interacting WGM's can be understood in terms of an effective boundary deformation in ray dynamical analysis. We also discuss the oscillation of the splitting when the distance is greater than a wavelength

  16. Finite-size resonance dielectric cylinder in a rectangular waveguide

    International Nuclear Information System (INIS)

    Chuprina, V.N.; Khizhnyak, N.A.

    1988-01-01

    The problem on resonance spread of an electromagnetic wave by a dielectric circular cylinder of finite size in a rectangular waveguide is solved by a numerical-analytical method. The cylinder axes are parallel. The cylinder can be used as a resonance tuning element in accelerating SHF-sections. Problems on cutting off linear algebraic equation systems, to which relations of macroscopic electrodynamics in the integral differential form written for the concrete problem considered here are reduced by analytical transformations, are investigated in the stage of numerical analysis. Theoretical dependences of the insertion of the voltage standing wave coefficient on the generator wave length calculated for different values of problem parameters are constracted

  17. Magnetic field effect on indole exciplexes: an anomalous dielectric dependence

    International Nuclear Information System (INIS)

    Sengupta, Tamal; Basu, Samita

    2004-01-01

    Individual exciplex formation between various aromatic hydrocarbons, anthracene, pyrene, all-s-trans-1,4-diphenylbuta-1,3-diene and a heteroaromatic amine, 1,2-dimethylindole, was investigated by steady-state fluorescence and magnetic field effect (MFE). A comparative study was carried out with two other exciplex systems 9-cyanophenanthrene-1,2-dimethylindole and 9-cyanophenanthrene-N-methylindole. The extent of charge transfer and dielectric dependence of MFE reveals the potential role of specific interactions related to exciplex geometry

  18. Mechanistic interaction study of thin oxide dielectric with conducting organic electrode

    International Nuclear Information System (INIS)

    Sharma, Himani; Sethi, Kanika; Raj, P. Markondeya; Gerhardt, R.A.; Tummala, Rao

    2012-01-01

    Highlights: ► Thin film-oxide dielectric-organic electrode interface studies for investigating the leakage mechanism. ► XPS to elucidate chemical-structural changes on dielectric oxide surface. ► Correlates structural characterization data with capacitor leakage current and impedance spectroscopy characteristics. - Abstract: This paper aims at understanding the interaction of intrinsic conducting polymer, PEDT, with ALD-deposited Al 2 O 3 and thermally oxidized Ta 2 O 5 dielectrics, and the underlying mechanisms for increase in leakage currents in PEDT-based capacitors. Conducting polymers offer several advantages as electrodes for high surface area capacitors because of their lower resistance, self-healing and enhanced conformality. However, capacitors with in situ polymerized PEDT show poor electrical properties that are attributed to the interfacial interaction between the organic electrode and the oxide dielectric. This study focuses on characterizing these interactions. A combination of compositional, structural and electrical characterization techniques was applied to polymer-solid-state-capacitor to understand the interfacial chemical behavior and dielectric property deterioration of alumina and tantalum-oxide films. XPS and impedance studies were employed to understand the stiochiometric and compositional changes that occur in the dielectric film on interaction with in situ deposited PEDT. Based on the observations from several complimentary techniques, it is concluded that tantalum-pentoxide has more resistance towards chemical interaction with in situ polymerized PEDT. The thermally oxidized Ta 2 O 5 -PEDT system showed leakage current of 280 nA μF −1 at 3 V with a breakdown voltage of 30 V. On the other hand, Al 2 O 3 -PEDT capacitor showed leakage current of 50 μA μF −1 and a breakdown voltage of 40 V. The study reports direct evidence for the mechanism of resistivity drop in alumina dielectric with in situ polymerized PEDT electrode.

  19. Determination of the concentration of alum additive in deep-fried dough sticks using dielectric spectroscopy

    Directory of Open Access Journals (Sweden)

    Wenyu Kang

    2015-09-01

    Full Text Available The concentration of alum additive in deep-fried dough sticks (DFDSs was investigated using a coaxial probe method based on dielectric properties in the 0.3–10-GHz frequency range. The dielectric spectra of aqueous solutions with different concentrations of alum, sodium bicarbonate, and mixtures thereof were used. The correspondence between dielectric loss and alum concentration was thereby revealed. A steady, uniform correspondence was successfully established by introducing ω·ε″(ω, the sum of dielectric loss and conductor loss (i.e., total loss, according to the electrical conductivity of the alum-containing aqueous solutions. Specific, resonant-type dielectric dispersion arising from alum due to atomic polarization was identified around 1 GHz. This was used to discriminate the alum additive in the DFDS from other ingredients. A quantitative relationship between alum and sodium bicarbonate concentrations in the aqueous solutions and the differential dielectric loss Δε″(ω at 0.425 GHz was also established with a regression coefficient over 0.99. With the intention of eliminating the effects of the chemical reactions with sodium bicarbonate and the physical processes involved in leavening and frying during preparation, the developed technique was successfully applied to detect the alum dosage in a commercial DFDS (0.9942 g/L. The detected value agreed well with that determined using graphite furnace atomic absorption spectrometry (0.9722 g/L. The relative error was 2.2%. The results show that the proposed dielectric differential dispersion and loss technique is a suitable and effective method for determining the alum content in DFDSs.

  20. Phase Identification and Dielectric Properties of Pb0.94 Ca0.06 TiO3 Ceramics

    International Nuclear Information System (INIS)

    Khin Thida; Tin Tin Aye; Aye Aye Phyu; Moe Moe Myint; Ko Ko Kyaw Soe

    2008-03-01

    The ferroelectric materials of Ca (6 mol %) doped PbTiO3 (abbreviated to PCT6) ceamics were prepared by using conventional solid solution method. Phase assignment is identified by XRD technique. The change in capacitance, the variation of dielectric constant and dielectric loss as a function of applied frequency modes (1 kHz-10 kHz)at zero bias voltage of PCT6 ceramics by using Cu and Ag electrodes were investigated.