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Sample records for low-k dielectrics investigated

  1. Low field, non-destructive investigation of the effect of moisture on the reliability of low-k dielectrics via dielectric relaxation

    Science.gov (United States)

    Laibowitz, Robert; Raja, Archana; Liniger, Eric; Shaw, Thomas

    2015-03-01

    Assessing the reliability of low dielectric constant (problem for the scalability of integrated circuits to reduced dimensions. The decrease in capacitance ensures lower power consumption and shorter RC delays. The materials are typically nanoporous and are composed of Si, C, O and H. We present a non-destructive, low field investigation of the effect of moisture on Back End of Line integrated circuit capacitors as used in industry. The low-k dielectric layers are around 40nm thick with a k=2.5. Through the measurement of dielectric losses as a function of temperature and applied frequency, we assign two relaxation modes of water in the pores of the dielectric, having thermal activation energies of 0.30 and 0.56eV. Study of dielectric loss as a function of humidification yields a direct correlation to the time dependent dielectric breakdown, wherein increased water incursion into the low k dielectric reduces the lifetime of the device.

  2. Fluorine-doped SiO{sub 2} and fluorocarbon low-k dielectrics investigated by SIMS

    Energy Technology Data Exchange (ETDEWEB)

    Cwil, M. [Tele and Radio Research Institute, Ratuszowa 11, 03-450 Warsaw (Poland)], E-mail: cwil@if.pw.edu.pl; Kalisz, M. [Faculty of Electronics and Information Technologies, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw (Poland); Konarski, P. [Tele and Radio Research Institute, Ratuszowa 11, 03-450 Warsaw (Poland)

    2008-12-15

    In this work, we present secondary ion mass spectrometry (SIMS) investigations of the incorporation of fluorine into thin SiO{sub 2} films adapted as low-k dielectrics in the metal-oxide-semiconductor (MOS) devices. The insulating SiOF oxides with the thickness ranging from 1 up to 15 nm have been prepared by plasma-enhanced chemical vapor deposition (PECVD) and/or by reactive ion etching (RIE) methods on <1 0 0> oriented p-Si substrates with the use of either CF{sub 4} or CHF{sub 3} source of the plasma. SIMS experiments were performed using ultra-low energy (1 keV) argon ion beam and quadrupole mass analyzer. Depth profiles of the resulting dielectric films illustrate: (i) the incorporation of F into the SiO{sub 2} matrix is accomplished by either the CHF{sub 3} or CF{sub 4} plasmas; (ii) no etching of SiO{sub 2} matrix is observed by using of CHF{sub 3}; (iii) CHF{sub 3} is a source of fluorocarbon film deposition on top of the SiO{sub 2} that prevents the SiO{sub 2} etching; and (iv) fluorine quantifications done based on implantation criteria give the maximum concentrations within the films from 6.0 x 10{sup 18} to 2.4 x 10{sup 20} atoms/cm{sup 3} depending on the different fluoridation conditions. The F concentration in SiO{sub 2} increases with the r.f. power of CF{sub 4} or with decreasing a gas pressure of CHF{sub 3} plasma.

  3. Electron Radiation Effects in Low-K Dielectric Materials

    Energy Technology Data Exchange (ETDEWEB)

    Jenei, Z; Petkov, M; Asoka-Kumar, P; Miller, R; Volksen, W

    2003-10-22

    Positron annihilation spectroscopy was used to study microstructural changes in low-k interlevel dielectrics under emulated electron irradiation of up to 1 Mrad(Si) dose, and the impact of the degradation of materials properties on device performance.

  4. Defect-induced bandgap narrowing in low-k dielectrics

    Energy Technology Data Exchange (ETDEWEB)

    Guo, X.; Zheng, H.; Shohet, J. L. [Plasma Processing & Technology Laboratory and Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); King, S. W. [Logic Technology Development, Intel Corporation, Hillsboro, Oregon 97124 (United States); Afanas' ev, V. V. [Department of Physics, University of Leuven, B-3001 Leuven (Belgium); Baklanov, M. R.; Marneffe, J.-F. de [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Nishi, Y. [Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States)

    2015-08-24

    In this work, core-level X-ray photoelectron spectroscopy was utilized to determine the surface bandgap for various porous and non-porous low-k a-SiCOH dielectrics before and after ion sputtering. By examining the onset of inelastic energy loss in O 1s core-level spectra, the gap narrowing was universally found in Ar{sup +} ion sputtered low-k dielectrics. The reduction of the bandgap ranges from 1.3 to 2.2 eV depending on the film composition. We show that the bandgap narrowing in these low-k dielectrics is caused by development of the valence-band tail as evidenced by the presence of additional electronic states above the valence-band maximum. Electron-spin-resonance measurements were made on a-SiCOH films to gain atomic insight into the nature of the sputtering-induced defects and reveal formation of carbon-related defects as the most probable origin of the gap states.

  5. Anisotropy of low dielectric constant materials and reliability of copper/low-k interconnects

    Science.gov (United States)

    Cho, Taiheui

    2000-10-01

    Cu/low-k material interconnects are a solution to overcome problems that occur in deep submicron Al/SiO2 based interconnects. Several challenges have to be resolved before successfully integrating copper and low-k dielectric materials into interconnects. In this work, Cu and several low-k polymers were used for interconnect applications and their effects on interconnect performance were investigated. Dielectric anisotropy is one of the factors that affect interconnect performance. Two fluorinated polymers, a rigid rod-like polyimide (Dupont FPI-136M) and a flexible poly(aryl ether) (Allied Signal FLARE 1.51) were used to investigate the relationship between dielectric anisotropy and molecular orientation. The dielectric anisotropy of the rigid rod-like polyimide was reduced relative to that in blanket films when it was confined in submicron trenches. Such a reduction was not observed in the flexible polymer. Polarized FTIR experiments showed that when rigid rod-like polymer was confined in submicron trenches polymer chains preferentially oriented parallel to metal lines. The preferential orientation reduced the in-plane dielectric constant of the polymer. A barrier layer has to be used to prevent Cu diffusion into an interlayer dielectric material. Ta, TaN, and TaSiN were used to investigate the relationship between barrier capability and microstructures using a bias temperature stress. TaSiN performed best because TaSiN was amorphous, followed by TaN then Ta because TaN had impurities segregated in grain boundaries. When Cu/BCB interconnects were fabricated and their reliability was investigated with the bias temperature stress, some of the interconnect structures performed properly and their life times were comparable to those of Cu/SiO2 interconnects, while other interconnect structures rapidly failed because the Cu readily diffused through defects in the barrier. The defects were introduced during chemical-mechanical polishing and plasma etching processes.

  6. Fundamental Properties of Organic Low-k Dielectrics Usable in the Cu Damascene Process

    Science.gov (United States)

    Nomura, Yutaka; Ota, Fumihiko; Kurino, Hiroyuki; Koyanagi, Mitsumasa

    2005-11-01

    The material parameters for organic low-k dielectrics usable in the damascene process were studied using two different types of polymers with similar low dielectric constants, namely, the PQ-600 thermoplastic polymer and the SiLK thermosetting polymer. The resistibility of these polymers in the damascene process was investigated through hard-mask (SiO2) deposition, etching and chemical mechanical polishing (CMP) processes using scanning probe microscopy (SPM), scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FT-IR) and a modified edge liftoff test (m-ELT). For the PQ-600 film, damage was observed in the deposition process and dissolution of the film occurred during chemical cleaning in the etching process. On the other hand, the SiLK film was combinable with the Cu damascene process and usable as an interlayer dielectric (ILD) in one-level Cu wiring. A high glass transition temperature (Tg) and chemical resistance resulting from the thermosetting structure are considered to be the essential properties required for the desired organic low-k dielectrics. In eddition, the electrical properies of the SiLK film were investigated using a one-level test element group (TEG) formed through a single Cu damascene process. The dielectric constant of the SiLK film extracted from the Cu damascene TEG compared with that of bulk SiO2 was reduced by 24%. The leakage current measured at 1 MV/cm between the adjoining Cu lines at the TEG pattern with a hard mask was 9.7× 10-10 A/cm2, and dielectric breakdown occurred at 5.5 MV/cm.

  7. Influence of porosity on electrical properties of low-k dielectrics irradiated with vacuum-ultraviolet radiation

    Science.gov (United States)

    Choudhury, F. A.; Nguyen, H. M.; Baklanov, M. R.; de Marneffe, J. F.; Li, W.; Pei, D.; Benjamin, D. I.; Zheng, H.; King, S. W.; Lin, Y.-H.; Fung, H.-S.; Chen, C.-C.; Nishi, Y.; Shohet, J. L.

    2016-09-01

    During plasma processing, low-k dielectrics are exposed to high levels of vacuum ultraviolet (VUV) radiation emitted from the plasma. The porous structure of these materials makes them more sensitive to modification because of their low density and consequently deep penetration of active species into the film. Here, we investigate the changes to electrical properties of porous low-k dielectrics as a function of porosity after VUV irradiation. Organosilicate low-k films of porosities between 30% and 50% were exposed to synchrotron VUV radiation at 8 eV with a fluence of approximately 5 × 1014 photons/cm2. Capacitance-voltage measurements showed an increase in the dielectric constant along with a flat-band voltage shift. FTIR results show methyl depletion as well as water uptake after VUV treatment. These show that deterioration of the electrical properties after VUV exposure and the degree of damage are found to be higher for the more porous films.

  8. Integration of porous low-k dielectrics using post porosity pore protection

    Science.gov (United States)

    Zhang, Liping; de Marneffe, Jean-François; Verdonck, Patrick; Heylen, Nancy; Wen, Liang Gong; Wilson, Chris; Tokei, Zsolt; Boemmels, Juergen; De Gendt, Stefan; Baklanov, Mikhail R.

    2016-12-01

    Post porosity pore protection is studied as a means for low damage integration of porous low-k dielectrics. Homogeneous low-k densification is achieved using poly(methyl methacrylate) (PMMA) as a sacrificial filler. The improvement in plasma-induced damage is investigated on a plasma-enhanced chemical vapor deposition 2.0 porous organo-silicate glass, including damage from radicals and vacuum ultraviolet photons. Open pores are sealed upon polymer protection; therefore the penetration of metal species during deposition of a metal diffusion barrier is avoided. Various solutions for post metallization polymer removal are investigated, such as hydrogen remote plasma and an ultraviolet cure. The PMMA removal process is studied in order to avoid Cu wire degradation. Finally, low-k damage and barrier continuity are investigated on patterned wafers with functional circuits. By means of transmission electron microscopy inspection and electrical measurement, effective integrated k-values are extracted, giving a value k eff ~ 2.5-2.6 for the post metallization polymer removal option.

  9. 248-nm photolithography compatibility on low-k dielectrics in BEOL interconnects

    Science.gov (United States)

    Hong, Hyesook; Xing, Guoqiang; Mckerrow, Andrew; Kim, Tae S.; Smith, Patricia B.

    2002-07-01

    Printing small geometries using wavelength of 248 nm on low- k materials is not a plug-in photolithography process from one technology to other technology node. In this paper, a method of film characterization of low-k dielectric materials will be discussed. For a characterization of chemical vapor deposited low-k dielectric materials, a positive tone deep UV (DUV) chemically amplified photoresist (CAR) was used as a poisoning gauge. In early development state of low-k dielectrics and copper dual damascene interconnects in back-end-of-line processes, unstable patterning behaviors were observed in spite of using an organic bottom antireflective coating layers on low-k substrates. The initial work was focused on finding the source of lot-to-lot critical dimension (CD) variations and understanding what causes this problem as well. Study indicated a strong correlation that photo CD depended on time interval between photolithography process and previous process step. Significant photo CD shift was introduced by short cycle time from thin film deposition to photolithography process and post via etch clean process to trench photolithography process. To minimize photo CD variations, the process optimizations were necessary in low- k dielectric film deposition, rework, via etch process, and post via etch clean process. As parallel efforts to improve lot-to-lot CD control, various photoresist system, different ambient annealing conditions, various surface organic and inorganic capping techniques were tested. In this experiments, time interval between processes was tightly controlled and maximized the worst case of scenario. Fresh and aged low-k dielectric films were analyzed using time-of- flight secondary ion mass spectrometry and x-ray photoelectron spectroscopy techniques. This work suggested that N2 containing in the film or introducing N2 into low-k dielectric film caused lot-ot-lot photo CD variations.

  10. Temperature effect on low-k dielectric thin films studied by ERDA

    Energy Technology Data Exchange (ETDEWEB)

    Jensen, Jens [Uppsala Univ. (Sweden); Possnert, Göran [Uppsala Univ. (Sweden); Zhang, Yanwen [Pacific Northwest National Lab. (PNNL), Richland, WA (United States)

    2008-09-23

    Low-k dielectric materials are becoming increasingly interesting as alternative to SiO2 with device geometries shrinking beyond the 65 nm technology node. At elevated temperatures hydrogen migration becomes an important degradation mechanism for conductivity breakdown in semiconductor devices. The possibility of hydrogen release during the fabrication process is, therefore, of great interest in the understanding of device reliability. In this study, various low-k dielectric films were subjected to thermal annealing at temperatures that are generally used for device fabrication. Elastic recoil detection analysis (ERDA) was used to investigate compositional changes and hydrogen redistribution in thin films of plasma-enhanced tetraethylortho-silicate (PETEOS), phosphorus doped silicon glass (PSG), silicon nitride (SiN) and silicon oxynitride (SiON). Except for an initial hydrogen release from the surface region in films of PETEOS and PSG, the results indicate that the elemental composition of the films was stable for at least 2 hours at 450°C.

  11. Critical properties and reliability of low-k dielectrics for ULSI interconnect applications: Thickness and temperature dependence

    Science.gov (United States)

    Kim, Hyungkun

    A fundamental understanding and detailed elucidation of the thickness dependent behavior of the key properties of low-k dielectrics IS not only necessary but also essential, and the search for the interfacial behaviors between low-k dielectrics and other layers will be an important task to achieve a thinner layers of low-k dielectrics in current and future devices. Polytetrafluoroethylene (PTFE) has been considered as one of advanced low-k ILD materials for microelectronic interconnect and packaging applications. This study presents the thickness and temperature dependence of main key properties such as structural, mechanical, electrical, dielectric, optical, and thermal properties of on-wafer PTFE low-k polymer thin and ultrathin films, which has the lowest dielectric constant among nonporous low relative permittivity materials. PTFE polycrystalline polymer thin films ranging in thickness of 90 to 1200 nm are investigated by using ellipsometer, optical spectroscopy, nanoindentation, current-voltage (I-V) characteristic method. Both Nanospec/AFT and ellipsometer are used to measure the thickness of films at 16 selected points per sample, and then these values were averaged. In addition, the characterizations of microstructure and morphology has been studied by using small angle X-ray diffraction (SAXRD-Siemens D5000 Diffractometer), fourier transform infrared spectroscopy (MIDAC-PRS 102), and scanning electron microscopy (SEM). Our results show that thermal, dielectric, optical, and mechanical properties such as the solid-liquid transition temperature, coefficient of thermal expansion, dielectric strength, refractive index, Young's modulus, hardness of low-k polycrystalline polymer thin films strongly depend on the film thickness, and this thickness dependence can be related to the microstructure and morphology of the film. These thickness and temperature dependent behaviors can be also well described by the proposed model and a good agreement with experimental and

  12. In situ study on low-k interconnect time-dependent-dielectric-breakdown mechanisms

    Energy Technology Data Exchange (ETDEWEB)

    Boon Yeap, Kong, E-mail: KongBoon.Yeap@globalfoundries.com [GLOBALFOUNDRIES, Fab8, 400 Stonebreak Rd. Extension, Malta, New York 12020 (United States); Fraunhofer Institute for Ceramic Technologies and Systems, Maria-Reiche-Str. 2, D-01109 Dresden (Germany); Gall, Martin; Liao, Zhongquan; Sander, Christoph; Muehle, Uwe; Zschech, Ehrenfried [Fraunhofer Institute for Ceramic Technologies and Systems, Maria-Reiche-Str. 2, D-01109 Dresden (Germany); Justison, Patrick [GLOBALFOUNDRIES, Fab8, 400 Stonebreak Rd. Extension, Malta, New York 12020 (United States); Aubel, Oliver; Hauschildt, Meike; Beyer, Armand; Vogel, Norman [GLOBALFOUNDRIES Dresden Module One LLC and Co. KG, Wilschdorfer Landstr. 101, D-01109 Dresden (Germany)

    2014-03-28

    An in situ transmission-electron-microscopy methodology is developed to observe time-dependent dielectric breakdown (TDDB) in an advanced Cu/ultra-low-k interconnect stack. A test structure, namely a “tip-to-tip” structure, was designed to localize the TDDB degradation in small dielectrics regions. A constant voltage is applied at 25 °C to the “tip-to-tip” structure, while structural changes are observed at nanoscale. Cu nanoparticle formation, agglomeration, and migration processes are observed after dielectric breakdown. The Cu nanoparticles are positively charged, since they move in opposite direction to the electron flow. Measurements of ionic current, using the Triangular-Voltage-Stress method, suggest that Cu migration is not possible before dielectric breakdown, unless the Cu/ultra-low-k interconnect stacks are heated to 200 °C and above.

  13. Time Dependent Dielectric Breakdown in Copper Low-k Interconnects: Mechanisms and Reliability Models

    Directory of Open Access Journals (Sweden)

    Terence K.S. Wong

    2012-09-01

    Full Text Available The time dependent dielectric breakdown phenomenon in copper low-k damascene interconnects for ultra large-scale integration is reviewed. The loss of insulation between neighboring interconnects represents an emerging back end-of-the-line reliability issue that is not fully understood. After describing the main dielectric leakage mechanisms in low-k materials (Poole-Frenkel and Schottky emission, the major dielectric reliability models that had appeared in the literature are discussed, namely: the Lloyd model, 1/E model, thermochemical E model, E1/2 models, E2 model and the Haase model. These models can be broadly categorized into those that consider only intrinsic breakdown (Lloyd, 1/E, E and Haase and those that take into account copper migration in low-k materials (E1/2, E2. For each model, the physical assumptions and the proposed breakdown mechanism will be discussed, together with the quantitative relationship predicting the time to breakdown and supporting experimental data. Experimental attempts on validation of dielectric reliability models using data obtained from low field stressing are briefly discussed. The phenomenon of soft breakdown, which often precedes hard breakdown in porous ultra low-k materials, is highlighted for future research.

  14. A PNPN tunnel field-effect transistor with high-k gate and low-k fringe dielectrics

    Institute of Scientific and Technical Information of China (English)

    Cui Ning; Liang Renrong; Wang Jing; Zhou Wei; Xu Jun

    2012-01-01

    A PNPN tunnel field effect transistor (TFET) with a high-k gate dielectric and a low-k fringe dielectric is introduced.The effects of the gate and fringe electric fields on the TFET's performance were investigated through two-dimensional simulations.The results showed that a high gate dielectric constant is preferable for enhancing the gate control over the channel,while a low fringe dielectric constant is useful to increase the band-to-band tunneling probability.The TFET device with the proposed structure has good switching characteristics,enhanced on-state current,and high process tolerance.It is suitable for low-power applications and could become a potential substitute in next-generation complementary metal-oxide-semiconductor technology.

  15. Probing the molecular structures of plasma-damaged and surface-repaired low-k dielectrics.

    Science.gov (United States)

    Zhang, Xiaoxian; Myers, John N; Lin, Qinghuang; Bielefeld, Jeffery D; Chen, Zhan

    2015-10-21

    Fully understanding the effect and the molecular mechanisms of plasma damage and silylation repair on low dielectric constant (low-k) materials is essential to the design of low-k dielectrics with defined properties and the integration of low-k dielectrics into advanced interconnects of modern electronics. Here, analytical techniques including sum frequency generation vibrational spectroscopy (SFG), Fourier transform infrared spectroscopy (FTIR), contact angle goniometry (CA) and X-ray photoelectron spectroscopy (XPS) have been employed to provide a comprehensive characterization of the surface and bulk structure changes of poly(methyl)silsesquioxane (PMSQ) low-k thin films before and after O2 plasma treatment and silylation repair. O2 plasma treatment altered drastically both the molecular structures and water structures at the surfaces of the PMSQ film while no bulk structural change was detected. For example, ∼34% Si-CH3 groups were removed from the PMSQ surface, and the Si-CH3 groups at the film surface tilted toward the surface after the O2 plasma treatment. The oxidation by the O2 plasma made the PMSQ film surface more hydrophilic and thus enhanced the water adsorption at the film surface. Both strongly and weakly hydrogen bonded water were detected at the plasma-damaged film surface during exposure to water with the former being the dominate component. It is postulated that this enhancement of both chemisorbed and physisorbed water after the O2 plasma treatment leads to the degradation of low-k properties and reliability. The degradation of the PMSQ low-k film can be recovered by repairing the plasma-damaged surface using a silylation reaction. The silylation method, however, cannot fully recover the plasma induced damage at the PMSQ film surface as evidenced by the existence of hydrophilic groups, including C-O/C[double bond, length as m-dash]O and residual Si-OH groups. This work provides a molecular level picture on the surface structural changes of low-k

  16. SIMS study of Cu trapping and migration in low-k dielectric films

    Energy Technology Data Exchange (ETDEWEB)

    Li Yupu; Hunter, Jerry; Tate, Tom J

    2004-06-15

    A 545 nm thick low-k dielectric film was implanted at room temperature with 50 keV {sup 63}Cu{sup +} to a dose of 1.0x10{sup 14} atoms/cm{sup 2}. The film is a SiO{sub x}-based material and doped with about 8 at.% of flourine. Analyses by secondary-ion mass spectrometry show that Cu is fast diffuser in the low-k film, and after the RTA anneals Cu has redistributed within the film and some Cu has migrated to the interface between the low-k film and Si substrate. At 800 deg. C RTA, the apparent 'diffusion' coefficient in the implanted film, D{sub A}, is estimated as {approx}1.5x10{sup -9} cm{sup 2}/s. The 1100 deg. C RTA sample was re-analysed after stripping the low-k film and the result showed that 4.0x10{sup 12} atoms/cm{sup 2} Cu had moved into the silicon substrate to a depth of about 170 nm.

  17. Fabrication of mesoporous silica for ultra-low-k interlayer dielectrics

    Science.gov (United States)

    Fujii, Nobutoshi; Kohmura, Kazuo; Nakayama, Takahiro; Tanaka, Hirofumi; Hata, Nobuhiro; Seino, Yutaka; Kikkawa, Takamaro

    2005-11-01

    We have developed sol-gel self-assembly techniques to control the pore structure and diameter of ultra-low-k interlayer dielectric (ILD) films. Porous silica films have been fabricated using cationic and nonionic surfactants as templates, resulting in 2D-hexagonal and disordered pore structures, respectively. The disordered mesoporous silica film has a worm-hole like network of pore channels having a uniform diameter. Precursors of the mesoporous silica films were synthesized by use of tetraethyl-orthosilicate (TEOS), inorganic acid, water, ethanol and various surfactants. The surfactants used were cationic alkyltrimethyl-ammonium (ATMA) chloride surfactants for 2D-hexagonal pores and nonionic tri-block copolymer for disordered structures. Dimethyldiethoxysilane (DMDEOS) was added for forming the disordered mesoporous silica. The disordered cylindrical pore structure with a uniform pore size was fabricated by controlling the static electrical interaction between the surfactant and the silica oligomer with methyl group of DMDEOS. Tetramethylcycrotetrasiloxane (TMCTS) vapor treatment was developed, which improved the mechanical strength of mesoporous silica films. The TMCTS polymer covered the pore wall surface and cross-linked to passivate the mechanical defects in the silica wall. Significant enhancement of mechanical strength was demonstrated by TMCTS vapor treatment. The porous silica film modified with a catalyst and a plasma treatment achieved higher mechanical strength and lower dielectric constant than conventional porous silica films because the TMCTS vapor treatment was more effective for mechanical reinforcement and hydrophobicity.

  18. Optical second-harmonic generation measurements of porous low-k dielectric materials

    Science.gov (United States)

    Atkin, Joanna; Shaw, Thomas; Laibowitz, Robert; Heinz, Tony

    2009-03-01

    Low-k dielectric materials based on porous carbon-doped oxides, with relative dielectric constants as low as 2.1, are widely used as thin insulating films in the microelectronics industry. Knowledge of these materials' basic electronic properties, such as energy gaps, barrier heights, and trap states, is essential for modeling their electrical leakage and stability characteristics. We use femtosecond laser pulses to probe the dynamics of charge-carrier transfer processes across Si/LKD interfacial barriers by optical second harmonic generation (SHG). Larger electric fields from multiphoton injection can be developed in Si/LKD systems compared to Si/SiO2, indicating a significantly higher density of traps in the LKD. This is consistent with previously reported measurements of trap density by photoinjection techniques^*. We will also discuss results on the dynamics of discharging and on the dependence of charging phenomena on layer thickness. ^*J. M. Atkin, D. Song, T. M. Shaw, E. Cartier, R. B. Laibowitz, and T. F. Heinz, J. Appl. Phys. 103, 094104 (2008).

  19. Etching of organosilicate glass low-k dielectric films in halogen plasmas

    CERN Document Server

    Vitale, S A

    2002-01-01

    The chemistry and kinetics of alternative etching chemistries for low-k dielectric materials are explored to improve the anisotropy of the etching process and to reduce the problems associated with postetch clean-up. Etching rates, selectivities, and etching yields of Black Diamond and Coral organosilicate glasses (OSGs) have been measured. Black Diamond and Coral are etched rapidly in F sub 2 , Cl sub 2 , and HBr high density plasmas, and Cl sub 2 +HBr plasmas have been identified as a viable process chemistry with several advantages over traditional fluorocarbon plasmas. The OSG films are not spontaneously etched by F sub 2 , Cl sub 2 , HBr molecules, Cl, or Br atoms, however, F atoms etch the OSGs spontaneously. F, Cl, and H atoms extract a substantial amount of carbon from the films, but Cl and H do not attack the OSG oxide matrix. The Coral films are more strongly depleted of carbon after halogen plasma etching than the Black Diamond. In addition, oxygen atoms extract nearly all of the carbon and nitroge...

  20. Charge carrier trapping into mobile, ionic defects in nanoporous ultra-low-k dielectric materials

    Science.gov (United States)

    Plawsky, Joel; Borja, Juan; Lu, Toh-Ming; Gill, William

    2014-03-01

    Reliability and robustness of low-k materials for advanced interconnects has become a major challenge for the continuous down-scaling of silicon semiconductor devices. Metal catalyzed time dependent breakdown (TDDB) is a major force preventing the integration of sub-32nm process technology nodes. We investigate how ionic species can become trapping centers (mobile defects) for charge carriers. A mechanism for describing and quantifying the trapping of charge carriers into mobile ions under bias and temperature stress is presented and experimentally investigated. The dynamics of trapping into ionic centers are severely impacted by temperature and species mass transport. After extended bias and temperature stress, the magnitude of charge trapping into ionic centers decreases asymptotically. Various processes such as the reduction of ionic species, moisture outgassing, and the inhibition of ionic drift via the distortion of local fields were investigated as possible cause for the reduction in charge trapping. Simulations suggest that built-in fields reduce the effect of an externally applied field in directing ionic drift, which can lead to the inhibition of the trapping mechanism. In addition, conduction mechanisms are investigated for reactive and inert electrodes. Seimconductor Research Corporation.

  1. Mechanical reliability of porous low-k dielectrics for advanced interconnect: Study of the instability mechanisms in porous low-k dielectrics and their mediation through inert plasma induced re-polymerization of the backbone structure

    Science.gov (United States)

    Sa, Yoonki

    Continuous scaling down of critical dimensions in interconnect structures requires the use of ultralow dielectric constant (k) films as interlayer dielectrics to reduce resistance-capacitance delays. Porous carbon-doped silicon oxide (p-SiCOH) dielectrics have been the leading approach to produce these ultralow-k materials. However, embedding of porosity into dielectric layer necessarily decreases the mechanical reliability and increases its susceptibility to adsorption of potentially deleterious chemical species during device fabrication process. Among those, exposure of porous-SiCOH low-k (PLK) dielectrics to oxidizing plasma environment causes the increase in dielectric constant and their vulnerability to mechanical instability of PLKs due to the loss of methyl species and increase in moisture uptake. These changes in PLK properties and physical stability have been persisting challenges for next-generation interconnects because they are the sources of failure in interconnect integration as well as functional and physical failures appearing later in IC device manufacturing. It is therefore essential to study the fundamentals of the interactions on p-SiCOH matrix induced by plasma exposure and find an effective and easy-to-implement way to reverse such changes by repairing damage in PLK structure. From these perspectives, the present dissertation proposes 1) a fundamental understanding of structural transformation occurring during oxidative plasma exposure in PLK matrix structure and 2) its restoration by using silylating treatment, soft x-ray and inert Ar-plasma radiation, respectively. Equally important, 3) as an alternative way of increasing the thermo-mechanical reliability, PLK dielectric film with an intrinsically robust structure by controlling pore morphology is fabricated and investigated. Based on the investigations, stability of PLK films studied by time-dependent ball indentation tester under the elevated temperature, variation in film thickness and

  2. Novel thin film polymer foaming technique for low and ultra low-k dielectrics

    NARCIS (Netherlands)

    Krause, B.; Koops, G.H.; Vegt, van der N.F.A.; Wessling, M.; Wubbenhorst, M.; Turnhout, van J.

    2001-01-01

    The results presented show a novel route for the preparation of thin ultra-low-k polymer films based on commercial and "non-exotic" (non-expensive) polyimide by a foaming technique. Dependent on the glass transition temperature of the polyimide mechanically and thermally stable (> 300 °C) films havi

  3. Effective dielectric and elastic properties of nanoporous low-k media

    Science.gov (United States)

    Hermann, H.

    2010-07-01

    This paper presents a mathematically defined characterization of random porous media including random self-similarity and surface fractality. The initial two-phase structure is transformed into a three-phase system by introducing the internal surface layer as the third phase. Effective medium theories are utilized to calculate macroscopic dielectric and elastic properties. The dependence of both the static dielectric constant and Young's modulus on geometrical parameters is analyzed for different combinations of bulk and interface properties. It is shown that the modification of the properties of the internal surface layer is a promising way to improve the effective constants of the materials. The obtained analytical expressions are also used to determine confined regions in the space of structural parameters where pre-specified property combinations are realized. The results are discussed in terms of possible applications of nanometer-scale porous interlayer dielectrics with an ultralow dielectric constant and sufficient mechanical stiffness for future semiconducting devices.

  4. Focused ion beam sectioning and lift-out method for copper and resist vias in organic low-k dielectrics.

    Science.gov (United States)

    Crawford, E J; Gignac, L; Barth, K; Petrus, J; Levine, E

    2002-12-01

    The focused ion beam lift-out technique for scanning electron microscope (SEM) and transmission electron microscope (TEM) sample preparation was shown to be applicable to copper/low-k dielectric semiconductor technology. High resolution SEM, TEM, and scanning transmission electron microscope analyses were performed on metal contacts and resist vias with no evidence of the interface damage or metal smearing commonly observed with mechanical polishing. Ion milling of the sample ex situ to the substrate provided decoration and adjustment of the exposed plane of the section when necessary for SEM analysis.

  5. Sol-Gel Deposited Porogen Based Porous Low-k Thin Films for Interlayer Dielectric Application in ULSI Circuits

    Directory of Open Access Journals (Sweden)

    Yogesh S. Mhaisagar

    2012-10-01

    Full Text Available Porous SiO2 low-k thin films with low dielectric constant were successfully deposited by sol-gel spin-coating technique. The films were deposited by using Tertaethylorthosilicate (TEOS as a precursor solution and HF was used as an acid catalyst solution. The Tween80 with different volumetric concentrations i.e. 0.0 ml, 0.5 ml and 0.7 ml was used as a pore generator to lower the dielectric constant of the films by introducing the porosity in the films matrix. The thickness and refractive index (RI of low-k thin films have been measured by Ellipsometer. The refractive index and thickness of the films observed to be decreasing with increase in Tween80 concentration. The chemical bonding structures of films were analyzed by using Fourier transform infrared spectroscopy (FT-IR spectroscopy and the stretching, bending and rocking peaks appear at 1077 cm – 1, 967  cm – 1, 447  cm – 1 respectively confirm the formation of Si-O-Si network. The RIs of the films deposited at 0 ml, 0.5 ml and at 0.7 ml of Tween80 concentration are found to be 1.34, 1.26, and 1.20 respectively. Based on RI values of the films, the porosity percentage, density and dielectric constant have been calculated by standard formulation method. The increase in porosity percentage of films from 3 % to 55 % with increase in Tween80 concentration reveals that, the most of the hydroxyl group and porogen get evaporated and form more voids in the films. This increase in porosity percentage causes to lower the dielectric constant of films and was found to be 2.26 at the 0.7 ml of Tween80 concentration. Such porogen based low dialectic constant thin films can be suitable for interlayer dielectric (ILD applications in ULSI circuits.

  6. Mitigation of plasma-induced damage in porous low-k dielectrics by cryogenic precursor condensation

    Science.gov (United States)

    Zhang, Liping; de Marneffe, Jean-François; Leroy, Floriane; Lefaucheux, Philippe; Tillocher, Thomas; Dussart, Remi; Maekawa, Kaoru; Yatsuda, Koichi; Dussarrat, Christian; Goodyear, Andy; Cooke, Mike; De Gendt, Stefan; Baklanov, Mikhail R.

    2016-05-01

    The present work describes the plasma etch properties of porous organo-silicate materials at cryogenic temperature. The mechanism of plasma damage is studied by means of in situ ellipsometry and post-etch material evaluation. Using conventional volatile reactants such as SF6, it is found that low plasma damage can be achieved below  -120 °C through two main channels: pore sidewall passivation by molecular SF6 and partial condensation of non-volatile etch by-products. The protection can be enhanced by means of gas phase precursors with low saturated vapor pressure. Using C4F8, complete pore filling is achieved at  -110 °C and negligible plasma-induced damage is demonstrated on both blanket and patterned low-k films. The characteristics of the precursor condensation process are described and discussed in detail, establishing an optimal process window. It is shown that the condensation temperature can be raised by using precursors with even lower vapor pressure. The reported in situ densification through precursor condensation could enable damage-free plasma processing of mesoporous media.

  7. Mesostructured materials for optical applications: from low-k dielectrics to sensors and lasers

    Science.gov (United States)

    Wirnsberger, Gernot; Yang, Peidong; Scott, Brian J.; Chmelka, Bradley F.; Stucky, Galen D.

    2001-09-01

    Recent advances on the use of mesoporous and mesostructured materials for electronic and optical applications are reported. The focus is on materials which are processed by block-copolymer templating of silica under weakly acidic conditions and by employing dip- and spin-coating as well as soft lithographic methods to bring them into a well-defined macroscopic shape. Several chemical strategies allow the mesostructure architecture to be used for electronic/optical applications: Removal of the block-copolymers results in highly porous, mechanically and thermally robust materials which are promising candidates for low dielectric constant materials. Since the pores are easily accessible, these structures are also ideal hosts for optical sensors, when suitable are incorporated during synthesis. For example, a fast response optical pH sensor was implemented on this principle. As-synthesized mesostructured silica/block-copolymer composites, on the other hand, are excellently suited as host systems for laser dyes and photochromic molecules. Laser dyes like rhodamine 6G can be incorporated during synthesis in high concentrations with reduced dimerization. This leads to very-low-threshold laser materials which also show a good photostability of the occluded dye. In the case of photochromic molecules, the inorganic-organic nanoseparation enables a fast switching between the colorless and colored form of a spirooxazine molecule, attributed to a partitioning of the dye between the block-copolymer chains. The spectroscopic properties of these dye-doped nanocomposite materials suggest a silica/block-copolymer/dye co-assembly process, whereby the block-copolymers help to highly disperse the organic dye molecules.

  8. Low-k dielectric materials

    Directory of Open Access Journals (Sweden)

    D Shamiryan

    2004-01-01

    Full Text Available Performance improvements in microelectronic integrated circuits (ICs over the past few decades have, for the most part, been achieved by increasing transistor speed, reducing transistor size, and packing more transistors onto a single chip. Smaller transistors work faster, so ICs have become faster and more complex. An emerging factor that may disrupt this trend is the slowing speed of signal propagation within the chip. Signal delays, caused by the interconnection wiring, increase with each generation of scaling and may soon limit the overall performance of the integrated system.

  9. Helium Plasma Damage of Low-k Carbon Doped Silica Film: the Effect of Si Dangling Bonds on the Dielectric Constant

    Institute of Scientific and Technical Information of China (English)

    LI Hailing; WANG Qing; BA Dechun

    2014-01-01

    The low-k carbon doped silica film has been modified by radio frequency helium plasma at 5 Pa pressure and 80 W power with subsequent XPS,FTIR and optical emission spectroscopy analysis.XPS data indicate that helium ions have broken Si-C bonds,leading to Si-C scission with C(1s) lost seriously.The Si(2p),O(1s),peak obviously shifted to higher binding energies,indicating an increasingly oxidized Si(2p).FTIR data also show that the silanol formation increased with longer exposure time up to a week.Contrarily,the CH3 stretch,Si-C stretching bond and the ratio of the Si-O-Si cage and Si-O-Si network peak sharply decreased upon exposure to helium plasma.The OES result indicates that monovalent helium ions in plasma play a key role in damaging carbon doped silica film.So it can be concluded that the monovalent helium ions besides VUV photons can break the weak Si-C bonds to create Si dangling bonds and free methyl radicals,and the latter easily reacts with O2 from the atmosphere to generate CO2 and H2O.The bonds change is due to the Si dangling bonds combining with H2O,thereby,increasing the dielectric constant k value.

  10. Structural and composition investigations at delayered locations of low k integrated circuit device by gas-assisted focused ion beam

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Dandan, E-mail: dandan.wang@globalfoundries.com; Kee Tan, Pik; Yamin Huang, Maggie; Lam, Jeffrey; Mai, Zhihong [Technology Development Department, GLOBALFOUNDRIES Singapore Pte. Ltd., 60 Woodlands Industrial Park D, Street 2, Singapore 738406 (Singapore)

    2014-05-15

    The authors report a new delayering technique – gas-assisted focused ion beam (FIB) method and its effects on the top layer materials of integrated circuit (IC) device. It demonstrates a highly efficient failure analysis with investigations on the precise location. After removing the dielectric layers under the bombardment of an ion beam, the chemical composition of the top layer was altered with the reduced oxygen content. Further energy-dispersive x-ray spectroscopy and Fourier transform infrared analysis revealed that the oxygen reduction lead to appreciable silicon suboxide formation. Our findings with structural and composition alteration of dielectric layer after FIB delayering open up a new insight avenue for the failure analysis in IC devices.

  11. Numerical investigation of dielectric barrier discharges

    Science.gov (United States)

    Li, Jing

    1997-12-01

    A dielectric barrier discharge (DBD) is a transient discharge occurring between two electrodes in coaxial or planar arrangements separated by one or two layers of dielectric material. The charge accumulated on the dielectric barrier generates a field in a direction opposite to the applied field. The discharge is quenched before an arc is formed. It is one of the few non-thermal discharges that operates at atmospheric pressure and has the potential for use in pollution control. In this work, a numerical model of the dielectric barrier discharge is developed, along with the numerical approach. Adaptive grids based on the charge distribution is used. A self-consistent method is used to solve for the electric field and charge densities. The Successive Overrelaxation (SOR) method in a non-uniform grid spacing is used to solve the Poisson's equation in the cylindrically-symmetric coordinate. The Flux Corrected Transport (FCT) method is modified to solve the continuity equations in the non-uniform grid spacing. Parametric studies of dielectric barrier discharges are conducted. General characteristics of dielectric barrier discharges in both anode-directed and cathode-directed streamer are studied. Effects of the dielectric capacitance, the applied field, the resistance in external circuit and the type of gases (O2, air, N2) are investigated. We conclude that the SOR method in an adaptive grid spacing for the solution of the Poisson's equation in the cylindrically-symmetric coordinate is convergent and effective. The dielectric capacitance has little effect on the g-factor of radical production, but it determines the strength of the dielectric barrier discharge. The applied field and the type of gases used have a significant role on the current peak, current pulse duration and radical generation efficiency, discharge strength, and microstreamer radius, whereas the external series resistance has very little effect on the streamer properties. The results are helpful in

  12. Experimental investigation of streamer affinity for dielectric surfaces

    NARCIS (Netherlands)

    Trienekens, D.J.M.; Nijdam, S.; Akkermans, G.; Plompen, I.; Christen, T.; Ebert, U.

    2015-01-01

    We have experimentally investigated the affinity of streamers for dielectric surfaces using stroboscopic imaging and stereo photography. Affinity of streamers for dielectric surfaces was found to depend on a wide set of parameters, including pressure, voltage, dielectric material and di

  13. Novel integration of ultrathin Al2O3 with low-k dielectric as bilayer liner for capacitance optimization and stress mitigation in Cu through-silicon-via

    Science.gov (United States)

    Zhang, Lin; Li, Hong Yu; Shang, Yang; Yoo, Woosik; Yu, Hao; Tan, Chuan Seng

    2016-04-01

    Through-silicon-via (TSV) used in three-dimensional (3D) stacked dies must present small electrical parasitic, such as capacitance, to allow for low latency signal transmission. Stable TSV capacitance is desired to overcome the spatial circuit performance variation caused by non-uniform hot-spot heating. In this work, a novel combination of low-k with ultrathin Al2O3 bilayer liner is successfully integrated in the TSV. The TSV capacitance is reduced by ˜26% as compared to plasma-enhanced tetrahydrothosilicate (PETEOS) oxide liner. Stable TSV capacitance within the operating voltage of interest (˜0-5 V) is achieved by operating the TSV in a stable accumulation capacitance region. The positive shift in the flat-band voltage (ΔV FB = +19 V) is achieved by utilizing Al2O3-induced negative fixed charge (|Q f| = 1.3 × 1012 cm-2) at the Si/low-k interface. Leakage current density of the bilayer liner is improved to a level comparable with the PETEOS oxide liner post annealing [forming gas (N2/H2) at 350 °C for 2 h or 400 °C for 0.5 h]. Low-k material with a smaller elastic modulus improves the thermo-mechanical stress exerted on the surrounding Si substrate compared with PETEOS oxide.

  14. Effects of Alkaline Slurry on Low-k Dielectrics in CMP Process%碱性抛光液在CMP过程中对低k介质的影响

    Institute of Scientific and Technical Information of China (English)

    王立冉; 邢哲; 刘玉岭; 胡轶; 刘效岩

    2012-01-01

    The low-k material Polyimide (PI) was made on the p silicon substrate by spin-coating and solidifying, which was fabricated by using chemical mechanical polishing (CMP). After CMP process, the electrical properties of the low-k material were observed before and after experiments. In this experiment, the low-k material was polished by the barrier slurry, the Cu slurry and the new slurry, and the changes of the electrical properties of the low-k material were tested. Several types of slurries were utilized to evaluate their effects on the properties of low-k films. The results show that for the low-k material polished by the new slurry of pH 7. 09, the dielectric constant changes from 2. 8 to 2. 895, the leakage current is lower than 3. 35 pA and the remove rate is 59 nm/min. The low-A: material polished by the new slurry is superior to the barrier slurry and Cu slurry on the electrical properties. The performance of low-k materials can be potentially applied in the manufacture after polishing.%以p型硅片为衬底,经过旋涂固化制备低介电常数(低k)材料聚酰亚胺.经过化学机械抛光(CMP)过程,考察实验前后低k材料介电性能的变化.实验中分别使用阻挡层抛光液、Cu抛光液以及新型抛光液对低k材料进行抛光后,利用电参数仪对低k材料进行电性能测试.结果显示,低k材料介电常数经pH值为7.09新型抛光液抛光后,k值由2.8变为2.895,漏电流在3.35 pA以下,去除速率为59 nm/min.经新型抛光液抛光后的低k材料,在电学性能等方面均优于阻挡层抛光液和Cu抛光液,抛光后的低k材料的性能能够满足应用要求.

  15. Dielectric square resonator investigated with microwave experiments.

    Science.gov (United States)

    Bittner, S; Bogomolny, E; Dietz, B; Miski-Oglu, M; Richter, A

    2014-11-01

    We present a detailed experimental study of the symmetry properties and the momentum space representation of the field distributions of a dielectric square resonator as well as the comparison with a semiclassical model. The experiments have been performed with a flat ceramic microwave resonator. Both the resonance spectra and the field distributions were measured. The momentum space representations of the latter evidenced that the resonant states are each related to a specific classical torus, leading to the regular structure of the spectrum. Furthermore, they allow for a precise determination of the refractive index. Measurements with different arrangements of the emitting and the receiving antennas were performed and their influence on the symmetry properties of the field distributions was investigated in detail, showing that resonances with specific symmetries can be selected purposefully. In addition, the length spectrum deduced from the measured resonance spectra and the trace formula for the dielectric square resonator are discussed in the framework of the semiclassical model.

  16. Surface sealing using self-assembled monolayers and its effect on metal diffusion in porous low-k dielectrics studied using monoenergetic positron beams

    Energy Technology Data Exchange (ETDEWEB)

    Uedono, Akira, E-mail: uedono.akira.gb@u.tsukuba.ac.jp [Division of Applied Physics, Faculty of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan); Armini, Silvia; Zhang, Yu [IMEC, Kapeldreef 75, B-3001 Heverlee, Leuven (Belgium); Kakizaki, Takeaki [Division of Applied Physics, Faculty of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan); Krause-Rehberg, Reinhard [Department of Physics, Martin Luther University Halle, 06099 Halle (Germany); Anwand, Wolfgang; Wagner, Andreas [Institute for Radiation Physics, Helmholtz-Zentrum Dresden-Rossendorf, 01314 Dresden (Germany)

    2016-04-15

    Graphical abstract: - Highlights: • Pores with cubic pore side lengths of 1.1 and 3.1 nm coexisted in the low-k film. • For the sample without the SAM sealing process, metal atoms diffused from the top Cu/MnN layer into the OSG film and were trapped by the pores. Almost all pore interiors were covered by those metals. • For the sample damaged by a plasma etch treatment before the SAM sealing process, self-assembled molecules diffused into the OSG film, and they were preferentially trapped by larger pores. - Abstract: Surface sealing effects on the diffusion of metal atoms in porous organosilicate glass (OSG) films were studied by monoenergetic positron beams. For a Cu(5 nm)/MnN(3 nm)/OSG(130 nm) sample fabricated with pore stuffing, C{sub 4}F{sub 8} plasma etch, unstuffing, and a self-assembled monolayer (SAM) sealing process, it was found that pores with cubic pore side lengths of 1.1 and 3.1 nm coexisted in the OSG film. For the sample without the SAM sealing process, metal (Cu and Mn) atoms diffused from the top Cu/MnN layer into the OSG film and were trapped by the pores. As a result, almost all pore interiors were covered with those metals. For the sample damaged by an Ar/C{sub 4}F{sub 8} plasma etch treatment before the SAM sealing process, SAMs diffused into the OSG film, and they were preferentially trapped by larger pores. The cubic pore side length in these pores containing self-assembled molecules was estimated to be 0.7 nm. Through this work, we have demonstrated that monoenergetic positron beams are a powerful tool for characterizing capped porous films and the trapping of atoms and molecules by pores.

  17. Investigation of High-k Dielectrics and Metal Gate Electrodes for Non-volatile Memory Applications

    Science.gov (United States)

    Jayanti, Srikant

    Due to the increasing demand of non-volatile flash memories in the portable electronics, the device structures need to be scaled down drastically. However, the scalability of traditional floating gate structures beyond 20 nm NAND flash technology node is uncertain. In this regard, the use of metal gates and high-k dielectrics as the gate and interpoly dielectrics respectively, seem to be promising substitutes in order to continue the flash scaling beyond 20nm. Furthermore, research of novel memory structures to overcome the scaling challenges need to be explored. Through this work, the use of high-k dielectrics as IPDs in a memory structure has been studied. For this purpose, IPD process optimization and barrier engineering were explored to determine and improve the memory performance. Specifically, the concept of high-k / low-k barrier engineering was studied in corroboration with simulations. In addition, a novel memory structure comprising a continuous metal floating gate was investigated in combination with high-k blocking oxides. Integration of thin metal FGs and high-k dielectrics into a dual floating gate memory structure to result in both volatile and non-volatile modes of operation has been demonstrated, for plausible application in future unified memory architectures. The electrical characterization was performed on simple MIS/MIM and memory capacitors, fabricated through CMOS compatible processes. Various analytical characterization techniques were done to gain more insight into the material behavior of the layers in the device structure. In the first part of this study, interfacial engineering was investigated by exploring La2O3 as SiO2 scavenging layer. Through the silicate formation, the consumption of low-k SiO2 was controlled and resulted in a significant improvement in dielectric leakage. The performance improvement was also gauged through memory capacitors. In the second part of the study, a novel memory structure consisting of continuous metal FG

  18. Study of Positronium in Low-k Dielectric Films by means of 2D-Angular Correlation Experiments at a High-Intensity Slow-Positron Beam

    Energy Technology Data Exchange (ETDEWEB)

    Gessmann, T; Petkov, M P; Weber, M H; Lynn, K G; Rodbell, K P; Asoka-Kumar, P; Stoeffl, W; Howell, R H

    2001-06-20

    Depth-resolved measurements of the two-dimensional angular correlation of annihilation radiation (2D-ACAR) were performed at the high-intensity slow-positron beam of Lawrence Livermore National Laboratory. We studied the formation of positronium in thin films of methyl-silsesquioxane (MSSQ) spin-on glass containing open-volume defects in the size of voids. Samples with different average void sizes were investigated and positronium formation could be found in all cases. The width of the angular correlation related to the annihilation of parapositronium increased with the void size indicating the annihilation of non-thermalized parapositronium.

  19. Study of positronium in low-k dielectric films by means of 2D-angular correlation experiments at a high-intensity slow-positron beam

    Energy Technology Data Exchange (ETDEWEB)

    Gessmann, T.; Petkov, M.P.; Weber, M.H.; Lynn, K.G. [Washington State Univ., Pullman, WA (United States). Dept. of Physics; Rodbell, K.P. [IBM Watson Research Center, Yorktown Heights, NY (United States); Asoka-Kumar, P.; Stoeffl, W.; Howell, R.H. [Lawrence Livermore National Lab., CA (United States). Physics Dept.

    2001-07-01

    Depth-resolved measurements of two-dimensional angular correlation of annihilation radiation (2D-ACAR) were performed at the intense slow-positron beam at Lawrence Livermore National Laboratory. The formation of positronium was studied in thin films of methylsilsesquioxane (MSSQ) spin-on glass containing large open-volume defects (voids). Two samples with different average void sizes were investigated and positronium formation could be found in both cases. The width of the angular correlation related to annihilation of para-positronium (p-Ps) increased with the void size consistent with the annihilation of nonthermalized p-Ps. (orig.)

  20. Plasma damage effects on low-k porous organosilicate glass

    Science.gov (United States)

    Ren, H.; Antonelli, G. A.; Nishi, Y.; Shohet, J. L.

    2010-11-01

    Damage induced in low-k porous organosilicate glass (SiCOH) dielectric films by exposure to an electron cyclotron resonance (ECR) plasma was investigated. The effects of charged-particle bombardment and vacuum ultraviolet radiation were separated. Flux measurements showed that the ECR plasma has a greater photon flux in the vacuum ultraviolet (VUV) range than in the UV range. Damage was measured by examining the surface potential and capacitance-voltage characteristics after exposure. It was found that during argon ECR plasma processing, 75% of the charge accumulation comes from ions at the surface, while 25% of the charge accumulation occurs from charge trapped within the bulk of the dielectric film. The charge accumulation can be modified by changing the bias voltage of the wafer chuck. UV exposure was shown to repair both sources of damage. Fourier transform infrared (FTIR) spectroscopy results showed no significant change except for Si-(CH3)x bonds. It was found that both charged-particle bombardment and radiation from the ECR plasma damage these bonds. Ellipsometric measurements showed that both the dielectric thickness and the dielectric constant changed during plasma exposure. In addition, both plasma-induced swelling and UV-exposure shrinking effects were observed. The plasma-induced swelling occurs at the surface of the dielectric without changing the porosity of the dielectric, while UV-induced shrinking changes the porosity significantly.

  1. The effect of water uptake on the mechanical properties of low-k organosilica glass

    Science.gov (United States)

    X. Guo; J.E. Jakes; M.T. Nichols; S. Banna; Y. Nishi; J.L. Shohet

    2013-01-01

    Water uptake in porous low-k dielectrics has become a significant challenge for both back-end-of line integration and circuit reliability. The influence of absorbed water on the mechanical properties of plasma-enhanced chemical-vapor-deposited organosilicate glasses (SiCOH) was investigated with nanoindentation. The roles of physisorbed (α-...

  2. Investigation of ball bond integrity for 0.8 mil (20 microns) diameter gold bonding wire on low k die in wire bonding technology

    Science.gov (United States)

    Kudtarkar, Santosh Anil

    Microelectronics technology has been undergoing continuous scaling to accommodate customer driven demand for smaller, faster and cheaper products. This demand has been satisfied by using novel materials, design techniques and processes. This results in challenges for the chip connection technology and also the package technology. The focus of this research endeavor was restricted to wire bond interconnect technology using gold bonding wires. Wire bond technology is often regarded as a simple first level interconnection technique. In reality, however, this is a complex process that requires a thorough understanding of the interactions between the design, material and process variables, and their impact on the reliability of the bond formed during this process. This research endeavor primarily focused on low diameter, 0.8 mil thick (20 mum) diameter gold bonding wire. Within the scope of this research, the integrity of the ball bond formed by 1.0 mil (25 mum) and 0.8 mil (20 mum) diameter wires was compared. This was followed by the evaluation of bonds formed on bond pads having doped SiO2 (low k) as underlying structures. In addition, the effect of varying the percentage of the wire dopant, palladium and bonding process parameters (bonding force, bond time, ultrasonic energy) for 0.8 mil (20 mum) bonding wire was also evaluated. Finally, a degradation empirical model was developed to understand the decrease in the wire strength. This research effort helped to develop a fundamental understanding of the various factors affecting the reliability of a ball bond from a design (low diameter bonding wire), material (low k and bonding wire dopants), and process (wire bonding process parameters) perspective for a first level interconnection technique, namely wire bonding. The significance of this research endeavor was the systematic investigation of the ball bonds formed using 0.8 mil (20 microm) gold bonding wire within the wire bonding arena. This research addressed low k

  3. A Investigation of the Elastic and Dielectric Anisotropy of Paper.

    Science.gov (United States)

    Fleischman, Elmer Henry, Jr.

    This investigation was undertaken to learn more about the way in which fiber orientation and drying restraint affect the elastic and dielectric properties in all three principal directions of paper. It was found that both variables affect the in -plane elastic anisotropy by similar magnitudes. What was surprising, however, was that wet straining has the greatest effect in the z-direction. The z-direction stiffness was reduced 50% as a result of only a moderate 2.4% wet strain in the plane of the sheet. On the other hand, the dielectric anisotropy was affected very little by wet straining. In fact, the dielectric results could be explained in terms of mixture theories. The anisotropy in the dielectric constant when measured at microwave frequencies could largely be explained as being the result of fiber orientation alone without having to assume that the fiber has an anisotropic dielectric constant. From comparison of the elastic and dielectric results, it may be concluded that the mechanism by which wet straining enhances the elastic anisotropy does not involve a large fiber orientation in the direction of wet straining. From a practical standpoint, one could use the dielectric anisotropy measured at microwave frequencies as a measure of the fiber orientation distribution in the sheet. On the basis of the results presented here, this measurement should be quite insensitive to any stresses imposed on the sheet as it dries.

  4. Effects of plasma and vacuum-ultraviolet exposure on the mechanical properties of low-k porous organosilicate glass

    Science.gov (United States)

    X. Guo; J.E. Jakes; S. Banna; Y. Nishi; J.L. Shohet

    2014-01-01

    The effects of plasma exposure and vacuum-ultraviolet (VUV) irradiation on the mechanical properties of low-k porous organosilicate glass (SiCOH) dielectric films were investigated. Nanoindentation measurements were made on SiCOH films before and after exposure to an electron-cyclotron-resonance plasma or a monochromatic synchrotron VUV beam, to determine the changes...

  5. Investigations of the concept of a multibunch dielectric wakefield accelerator

    Energy Technology Data Exchange (ETDEWEB)

    Onishchenko, I.N., E-mail: onish@kipt.kharkov.ua; Kiselev, V.A.; Linnik, A.F.; Pristupa, V.I.; Sotnikov, G.V.

    2016-09-01

    Theoretical and experimental investigations of the physical principles of multibunch dielectric wakefield accelerator concept based on the wakefield excitation in the dielectric structure by a sequence of relativistic electron bunches are presented. The purpose of the concept is to enhance the wakefield intensity by means of the multibunch coherent excitation and wakefield accumulation in a resonator. The acceleration of bunches is achieved at detuning of bunch repetition frequency relative to the frequency of the excited wakefield. In such a way the sequence of bunches is divided into exciting and accelerated parts due to displacing bunches into accelerating phases of wakefield excited by a previous part of bunches of the same sequence. Besides the change of the permittivity and loss tangent of dielectrics under the irradiation by 100 MeV electron beam is studied.

  6. Improvement of electrical properties of Cu/SiCOH low-k film integrated system by O2 plasma treatment

    Institute of Scientific and Technical Information of China (English)

    Qian Xiao-Mei; Wei Yong-Xia; Yu Xiao-Zhu; Ye Chao; Ning Zhao-Yuan; Liang Rong-Qing

    2007-01-01

    This paper investigates the effect of O2 plasma treatment on the electric property of Cu/SiCOH low dielectric constant (low-k) film integrated structure. The results show that the leakage current of Cu/SiCOH low-k integrated structure can be reduced obviously at the expense of a slight increase in dielectric constant k of SiCOH films. By the Fourier transform infrared (FTIR) analysis on the bonding configurations of SiCOH films treated by O2 plasma, it is found that the decrease of leakage current is related to the increase of Si-O cages originating from the linkage of Si dangling bonjs through O, which makes the open pores sealed and reduces the diffusion of Cu to pores.

  7. Effect of water uptake on the fracture behavior of low-k organosilicate glass

    Science.gov (United States)

    Xiangyu Guo; Joseph E. Jakes; Samer Banna; Yoshio Nishi; J. Leon Shohet

    2014-01-01

    Water uptake in porous low-k dielectrics has become a significant challenge for both back-end-of-the-line integration and circuit reliability. This work examines the effects of water uptake on the fracture behavior of nanoporous low-k organosilicate glass. By using annealing dehydration and humidity conditioning, the roles of different water types...

  8. Cu-Induced Dielectric Breakdown of Porous Low-Dielectric-Constant Film

    Science.gov (United States)

    Cheng, Yi-Lung; Lee, Chih-Yen; Huang, Yao-Liang; Sun, Chung-Ren; Lee, Wen-Hsi; Chen, Giin-Shan; Fang, Jau-Shiung; Phan, Bach Thang

    2017-02-01

    Dielectric breakdown induced by Cu ion migration in porous low-k dielectric films has been investigated in alternating-polarity bias conditions using a metal-insulator-metal capacitor with Cu top metal electrode. The experimental results indicated that Cu ions migrated into the dielectric film under stress with positive polarity, leading to weaker dielectric strength and shorter time to failure (TTF). In the alternating-polarity test, the measured TTFs increased with decreasing stressing frequency, implying backward migration of Cu ions during reverse-bias stress. Additionally, compared with a direct-current stress condition, the measured TTFs were higher as the frequency was decreased to 10-2 Hz. The electric-field acceleration factor for porous low-k dielectric film breakdown in the alternating-polarity test was also found to increase. This Cu backward migration effect is effective when the stressing time under negative polarity is longer than 0.1 s.

  9. Positron annihilation lifetime spectroscopy (PALS) application in metal barrier layer integrity for porous low- k materials

    CERN Document Server

    Simon, Lin; Gidley, D W; Wetzel, J T; Monnig, K A; Ryan, E T; Simon, Jang; Douglas, Yu; Liang, M S; En, W G; Jones, E C; Sturm, J C; Chan, M J; Tiwari, S C; Hirose, M

    2002-01-01

    Positron Annihilation Lifetime Spectroscopy (PALS) is a useful tool to pre-screen metal barrier integrity for Si-based porous low-k dielectrics. Pore size of low-k, thickness of metal barrier Ta, positronium (Ps) leakage from PALS, trench sidewall morphology, electrical test from one level metal (1LM) pattern wafer and Cu diffusion analysis were all correlated. Macro-porous low-k (pore size >=200 AA) and large scale meso-porous low-k (>50~200 AA) encounter both Ps leakage and Cu diffusion into low-k dielectric in the 0.25 mu mL/0.3 mu mS structures when using SEMATECH in-house PVD Ta 250 AA as barrier layer. For small scale meso-porous (>20~50 AA) and micro- porous (<=20 AA) low-k, no Ps leakage and no Cu diffusion into low-k were observed even with PVD Ta 50 AA, which is proved also owing to sidewall densification to seal all sidewall pores due to plasma etch and ash. For future technology, smaller pore size of porous Si-based low-k (=<50 AA) will be preferential for dense low-k like trench sidewall to...

  10. Influence of the ion bombardment of O{sub 2} plasmas on low-k materials

    Energy Technology Data Exchange (ETDEWEB)

    Verdonck, Patrick, E-mail: verdonck@imec.be [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Samara, Vladimir [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Open University, Materials Engineering, Walton Hall, Milton Keynes MK7 6AA (United Kingdom); Goodyear, Alec [Open University, Materials Engineering, Walton Hall, Milton Keynes MK7 6AA (United Kingdom); Ferchichi, Abdelkarim; Van Besien, Els; Baklanov, Mikhail R. [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Braithwaite, Nicholas [Open University, Department of Physics and Astronomy, Walton Hall, Milton Keynes MK7 6AA (United Kingdom)

    2011-10-31

    In this study, special tests were devised in order to investigate the influence of ion bombardment on the damage induced in low-k dielectrics by oxygen plasmas. By placing a sample that suffered a lot of ion bombardment and one which suffered little ion bombardment simultaneously in the same plasma, it was possible to verify that ion bombardment in fact helped to protect the low-k film against oxygen plasma induced damage. Exhaustive analyses (ellipsometry, X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, porosimetry, capacitance-voltage (C-V) measurements, water contact angle analysis) show that ion bombardment induced the formation of a denser top layer in the film, which then hampered further penetration of active oxygen species deeper into the bulk. This was further confirmed by other tests combining capacitively and inductively coupled plasmas. Therefore, it was possible to conclude that, at least for these plasmas, ion bombardment may help to reduce plasma induced damage to low-k materials.

  11. Thermomechanical Property Characterization of Ultra Low-k Materials

    Science.gov (United States)

    Zhao, Jie-Hua; Gupta, Vikas; Mortensen, Clay D.; Lu, Kuan-Hsun; Edwards, Darvin R.; Johnson, David C.; Ho, Paul S.

    2009-06-01

    To meet electrical performance requirements, the industry is implementing ultra-low dielectric constant (ULK) materials in the back end of line interconnect structure. ULK dielectrics are inherently weak compared to traditional dielectrics and pose significant challenges to electronic packaging processes and reliability. Accurate mechanical properties are a pre-requisite for upfront risk assessments associated with low-k integration using numerical simulations. In this paper, techniques used to characterize ULK dielectric elastic modulus and in-plane/out-of-plane coefficient of thermal expansion will be presented and the data for a candidate ULK dielectric will be summarized. Nanoindentation of ULK films on substrate was used to determine the plane strain modulus. In the direction normal to the film, the temperature gradient of the thermal expansion strain along the film thickness was measured by x-ray reflectivity. In the plane of the film, the temperature gradient of the biaxial thermal stress was obtained by the substrate curvature measurements. A method to deduce Poisson's ratio of the thin ULK film is proposed using the data from the afore-mentioned characterization techniques.

  12. Hybrid polymer networks as ultra low `k` dielectric layers

    Energy Technology Data Exchange (ETDEWEB)

    Lewicki, James; Worsley, Marcus A.

    2016-02-16

    According to one embodiment, a polymeric material includes at least one polydimethylsiloxane (PDMS) polymer, and at least one polyhedral oligomericsilsequioxane (POSS) molecule. According to another embodiment, a method includes providing at least one polydimethylsiloxane (PDMS) polymer, providing at least one polyhedral oligomericsilsequioxane (POSS) molecule, and coupling the at least one PDSM polymer to the at least one POSS molecule to form a hybrid polymeric material.

  13. Dielectric relaxations investigation of a synthesized epoxy resin polymer

    Science.gov (United States)

    Jilani, Wissal; Mzabi, Nissaf; Gallot-Lavallée, Olivier; Fourati, Najla; Zerrouki, Chouki; Zerrouki, Rachida; Guermazi, Hajer

    2015-04-01

    A diglycidylether of bisphenol A (DGEBA) epoxy resin was synthesized, and cured with 3,3'-diaminodiphenyl sulfone (DDS) at a curing temperature of 120 °C. The relaxation properties of the realized polymers were studied by two complementary techniques: dielectric relaxation spectroscopy (DRS), in the temperature range 173-393K and in the frequency interval 10-1-106 Hz, and thermally stimulated depolarization current (TSDC) with a windowing polarization process. Current-voltage (I-V) measurements were also carried out to study interfacial relaxations. Dielectric data were analyzed in terms of permittivity and electric modulus variations. Three relaxation processes ( γ, β and α) have been identified. They were found to be frequency and temperature dependent and were interpreted in terms of the Havriliak-Negami approach. Relaxation parameters were determined by fitting the experimental data. The temperature dependence of the relaxation time was well fitted by the Arrhenius law for secondary relaxations, while the Vogel-Fulcher-Tamann model was found to better fit the τ( T) variations for α relaxation. We found τ 0 = 4.9 10-12 s, 9.6 10-13 s and 1.98 10-7 s for γ, β and α relaxations, respectively. The obtained results were found to be consistent with those reported in the literature. Due to the calculation of the low-frequency data of dielectric loss by the Hamon approximation, the Maxwell-Wagner-Sillars (MWS) relaxation was highlighted.

  14. X-band Dielectric Loaded Rf Driven Accelerator Structures Theoretical And Experimental Investigations

    CERN Document Server

    Zou, P

    2001-01-01

    An important area of application of high-power radio frequency (RF) and microwave sources is particle acceleration. A major challenge for the current worldwide research and development effort in linear accelerator is the search for a compact and affordable very-high-energy accelerator technology for the next generation supercolliders. It has been recognized for sometime that dielectric loaded accelerator structures are attractive candidates for the next generation very-high-energy linear accelerators, because they possess several distinct advantages over conventional metallic iris- loaded accelerator structures. However, some fundamental issues, such as RF breakdown in the dielectric, Joule heating, and vacuum properties of dielectric materials, are still the subjects of intense investigation, requiring the validation by experiments conducted at high power levels. An X-band traveling-wave accelerator based on dielectric-lined waveguide has been designed and constructed. Numerical calculation, bench measuremen...

  15. Investigation of Laser-Induced Damage on Multi-Layer Dielectric Gratings

    Institute of Scientific and Technical Information of China (English)

    KONG Wei-Jin; SHEN Zi-Cai; SHEN Jian; SHAO Jian-Da; FAN Zheng-Xiu

    2005-01-01

    @@ We investigate mechanisms of laser induced damage thresholds (LIDTs) of multi-layer dielectric gratings (MDGs).It is found that the laser damage thresholds of MDGs and unstructured dielectric multi-layer coatings (the substrate of MDG) are 3.15J/cm2 and 9.32J/cm2, respectively, at 1064nm (12ns) with the Littrow angle 51.2°and the TEM00 mode. The laser-induced damage mechanism of multi-layer dielectric is presented with the analysis of the following factors: The dominant factor is the pollution on the corrugated surface, which is induced by the complex manufacture process of multi-layer dielectric gratings; another is the electric field distribution along the corrugated surface. The third reason is due to the reduction in stoichiometry of oxide films, resulting from the manufacture process of etching.

  16. Relaxation dynamics of a protein solution investigated by dielectric spectroscopy.

    Science.gov (United States)

    Wolf, M; Gulich, R; Lunkenheimer, P; Loidl, A

    2012-05-01

    In the present work, we provide a dielectric study on two differently concentrated aqueous lysozyme solutions in the frequency range from 1MHz to 40GHz and for temperatures from 275 to 330K. We analyze the three dispersion regions, commonly found in protein solutions, usually termed β-, γ-, and δ-relaxations. The β-relaxation, occurring in the frequency range around 10MHz and the γ-relaxation around 20GHz (at room temperature) can be attributed to the rotation of the polar protein molecules in their aqueous medium and the reorientational motion of the free water molecules, respectively. The nature of the δ-relaxation, which is often ascribed to the motion of bound water molecules, is not yet fully understood. Here we provide data on the temperature dependence of the relaxation times and relaxation strengths of all three detected processes and on the dc conductivity arising from ionic charge transport. The temperature dependences of the β- and γ-relaxations are closely correlated. We found a significant temperature dependence of the dipole moment of the protein, indicating conformational changes. Moreover we find a breakdown of the Debye-Stokes-Einstein relation in this protein solution, i.e., the dc conductivity is not completely governed by the mobility of the solvent molecules. Instead it seems that the dc conductivity is closely connected to the hydration shell dynamics.

  17. Polymorphism and disorder in caffeine: Dielectric investigation of molecular mobilities

    Science.gov (United States)

    Descamps, M.; Decroix, A. A.

    2014-12-01

    Using dielectric relaxation data we have characterized the molecular mobilities of caffeine both in phase I (stable and metastable) and in phase II. In phase I effects of sublimation and phase transformation kinetics were carefully considered. In plane rotational motions were followed on a wide temperature range. A noticeable antiferroelectric short range order developing at the approach of the glass-like transition is characterized. Condition for occurrence of a critical-like behaviour is discussed. At high temperature the emergence of an additional ultra slow relaxation process is highlighted. Possible molecular mechanisms are proposed for both processes. In phase II the existence of a less intense relaxation process is confirmed. Close similarity with the main process developing in phase I hints at a common origin of the dipolar motions. Careful consideration of recent structure determinations leads to suggest that this process is associated to similar molecular in plane rotations but developing at the surface of crystalline samples. Lower cooperativity at the surface is reflected in the smaller activation entropy of the relaxation.

  18. Investigating Dielectric and Metamaterial Effects in a Terahertz Traveling-Wave Tube Amplifier

    Science.gov (United States)

    Starinshak, David P.; Wilson, Jeffrey D.

    2008-01-01

    Adding material enhancements to a terahertz traveling-wave tube amplifier is investigated. Isotropic dielectrics, negative-index metamaterials, and anisotropic crystals are simulated, and plans to increase the efficiency of the device are discussed. Early results indicate that adding dielectric to the curved sections of the serpentine-shaped slow-wave circuit produce optimal changes in the cold-test characteristics of the device and a minimal drop in operating frequency. Additional results suggest that materials with simultaneously small relative permittivities and electrical conductivities are best suited for increasing the efficiency of the device. More research is required on the subject, and recommendations are given to determine the direction.

  19. Investigation of thickness effects on the dielectric constant barium strontium titanate thin films

    CERN Document Server

    Grattan, L J

    2002-01-01

    The collapse in dielectric constant at small thickness commonly observed in ferroelectric thin films was measured and investigated in barium strontium titanate (Ba sub 0 sub . sub 5 Sr sub 0 sub . sub 5 TiO sub 3). The possible mechanisms responsible for this effect are reviewed. Functional measurements were performed on BST thin films, of 7.5 to 950 nm, by incorporating them into capacitor structures with bottom electrodes of strontium ruthenate (SRO) and thermally- evaporated Au top electrodes. A discussion on thin film growth considerations, optimal PLD conditions and the measurement techniques employed in the project is presented. The experimentally determined dielectric constant - thickness profile was fitted using the series capacitor model assuming low dielectric constant interfacial layers in series with the bulk. Consideration of the case where the combined 'dead layer' thickness was close to the total BST thickness revealed that, for this system, the total 'dead layer' thickness had to be less than ...

  20. Investigation of Dielectric Properties of Industrial Waste Reinforced Particulate Polymer Composites

    Directory of Open Access Journals (Sweden)

    Vijaya Kumar Nimmagadda

    2014-01-01

    Full Text Available Environmental awareness today motivates the worldwide researchers on the studies of industrial waste reinforced polymer composites. Rapid industrialization has resulted in the generation of huge quantity of solid and liquid wastes such as sugar, paper and pulp, fruit and food processing, distilleries, dairies, and poultries. The redundancy of industrial waste and government regulations have prompted researchers to try for industrial waste reinforced composites. Being low cost, ease of manufacturing, and high mechanical and other properties, an industrial waste represents a good alternative to the most common composites. In the present study, industrial wastes collected from different industries are used as particulate reinforcement in unsaturated polyester matrix and also in polypropylene and investigated dielectric properties. Results reveal that coupling agent treated composites produce improved dielectric strength due to improvement in compatibility between matrix and reinforcement interface. Results also reveal that industrial waste reinforced in polypropylene has more dielectric strength as compared to reinforcement in polyester.

  1. Investigation of bandwidth, efficiency, and quality factor for circular patch antennas with magneto-dielectric substrate

    DEFF Research Database (Denmark)

    Nour, Baqer; Breinbjerg, Olav

    2011-01-01

    This article documents an investigation of the effect of a magneto-dielectric substrate on the performance of a circular patch antenna; in particular, the radiation efficiency, the quality factor, and the bandwidth. Both analytical and numerical methods have been used to model the patch antenna. ....... The numerical method is used for lossy substrates, while the analytical method is used for lossless substrates....

  2. Investigation of bandwidth, efficiency, and quality factor for circular patch antennas with magneto-dielectric substrate

    DEFF Research Database (Denmark)

    Nour, Baqer; Breinbjerg, Olav

    2011-01-01

    This article documents an investigation of the effect of a magneto-dielectric substrate on the performance of a circular patch antenna; in particular, the radiation efficiency, the quality factor, and the bandwidth. Both analytical and numerical methods have been used to model the patch antenna...

  3. Dielectric engineered symmetric underlap double gate tunnel FET (DGTFET): An investigation towards variation of dielectric materials

    Science.gov (United States)

    Mallikarjunarao; Ranjan, Rajeev; Pradhan, K. P.; Sahu, P. K.

    2016-08-01

    In this article, an underlap silicon n-channel Tunnel Field Effect Transistor (n-TFET) i.e., symmetric single-k spacer (SSS) Double Gate N-TFET (DGTFET) is proposed to improve the performance of the device by using different spacer materials. A detailed investigation has been made on the proposed device characteristics with the help of extensive 2-D TCAD simulations. It is demonstrated that an optimized underlap length is chosen for a significant on-state current (Ion) without deteriorating the off-state current (Ioff) and sub-threshold swing (SS). The proposed model with different spacer materials has been extensively analyzed by using transfer characteristics, output characteristics, and analog/RF characteristics. The structure is optimized based on the comparison among various performance metrics like Ion, Ioff, SS, on-off ratio (Ion/Ioff), threshold (or) cut-off frequency (fT), and intrinsic delay with considering different spacer materials like SiO2 (k = 3.9), Si3N4 (k = 7.5), and HfO2 (k = 25).

  4. Influence of HF acid catalyst concentration on properties of aerogel low-k thin films

    Science.gov (United States)

    Gaikwad, A. S.; Gupta, S. A.; Mahajan, A. M.

    2016-08-01

    The effect of hydrofluoric acid (HF) catalyst concentration in coating solution on chemical, physical and structural properties of silica aerogel thin films was investigated. The aerogel films were synthesized by using a sol-gel spin coating method followed by aging in ethanol and CO2 supercritical drying. The refractive index (RI) is observed to be reduced from 1.32 to 1.13 and porosity percentage increased from 30.21% to 71.64% in accordance with increasing HF concentration. Deposition of silica aerogel was confirmed from Fourier transform infrared spectroscopy measurement. The nanoporous nature of deposited films was confirmed from field effect scanning electron microscopy and observed pore diameter is in the range of 3.33 to 6.69 nm. The nanoporous nature of the film was also validated from atomic force microscopy and root mean square roughness was observed to be increased from 2.31 nm to 3.2 nm with increasing acid catalyst concentration in the coating solution. The calculated dielectric constant from CV measurement of fabricated metal-insulator-semiconductor structure for the silica aerogel formed at 0.8 ml HF concentration is observed to be 1.73. These deposited nanoporous silica aerogel low-k films with lower k value and smaller pore size have application as interlayer dielectric materials to minimize the disadvantages of porous materials.

  5. Investigation of the Dielectric Strength of Syntactic Foam at 77 K under DC Stress

    Science.gov (United States)

    Winkel, D.; Puffer, R.; Schnettler, A.

    2014-05-01

    Liquid nitrogen (LN2) based electrical insulation systems for superconducting equipment of electrical power distribution networks are state of the art. Since LN2 is a cryogenic liquid it has some disadvantages when used as insulation. This paper deals with syntactic foam as an alternative insulation system for superconducting apparatus. Syntactic foam is a composite material consisting of a polymeric matrix and embedded hollow microspheres with diameters of several 10 μp?. As hollow microspheres are gas-filled, using those as filling material features significant reductions of the relative permittivity and of the thermal contraction due to cooling the material to liquid nitrogen temperature (LNT, T = 77 K). In this study both an epoxy resin (ER) and an unsaturated polyester resin (UPR) serve as matrix material. The hollow microspheres used in this investigation are made of untreated and silanized glass. The results of measurements of the dielectric DC strength show, that the dielectric strength of all investigated syntactic foam compositions are significantly higher at LNT compared to ambient temperature (AT). Furthermore, the effect of a higher dielectric strength of syntactic foam with silanized glass spheres at ambient temperature vanishes at LNT. Hence, the dielectric strength at LNT is unaffected by silanization of glass microspheres.

  6. MWCNTs/Resin Nanocomposites: Structural, Thermal, Mechanical and Dielectric Investigation

    Directory of Open Access Journals (Sweden)

    N. D. Alexopoulos

    2015-11-01

    Full Text Available Multi-wall carbon nanotubes (MWCNTs were manufactured, characterized and added to a typical aeronautical resin matrix at different concentrations as nano-reinforcement. The carbon content of produced MWCNTs was determined to be around 98.5% while they consisted of 13-20 wall-layers and their external diameter had an average size in between 20 and 50 nm. MWCNTs were dispersed in an epoxy resin system and tensile specimens for different MWCNTs concentrations were prepared in an open mould. Electrical wiring was attached to the specimens’ surface and surface electrical resistance change was in-situ monitored during monotonic tension till fracture. Performed tensile tests showed that the MWCNTs addition increased both modulus of elasticity and ultimate tensile strength on the nano-composites with a simultaneously dramatic ductility decrease. The MWCNTs addition enhanced the investigated resin matrix with monitoring ability; electrical resistance change of the investigated tensile tests was correlated in the elastic regime with axial nominal strain and the gauge factor of the different MWCNTs concentration specimens were calculated. It was found that lowest MWCNTs concentration gave the best results in terms of piezo-resistivity and simultaneously the least enhancement in the mechanical properties.

  7. Investigation of dielectric barrier discharge plasma flow control

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    Effects of plasma flow control are researched on the basis of plasma exciting flow experiments and numerical simulations. Turbulent model is more effective than laminar model in plasma numerical simulation as results showed. Both plasma exciting effects of acceleration and flow separation suppression are investigated through experiments carried on the flat plate and the compressor cascades. The results demonstrate that boundary layer characteristic is modified by plasma exciting. Distributions of total pressure and velocity in the wake are improved notably for 20 m/s coming velocity and the effect of plasma can still be observed while velocity is increased to 50 m/s. For low velocity flow, plasma exciting is effective in flow separation suppression.

  8. Structural, Electrical and Dielectrical Property Investigations of Fe-Doped BaZrO3 Nanoceramics

    Science.gov (United States)

    Khirade, Pankaj P.; Birajdar, Shankar D.; Humbe, Ashok V.; Jadhav, K. M.

    2016-06-01

    Nanocrystalline samples of BaZr1- x Fe x O3 ( x = 0.0, 0.05, 0.10, 0.20, 0.30, 0.40 and 0.50) ceramics were synthesized by the wet chemical sol-gel auto combustion method. The perovskite structured cubic phase formation of BaZr1- x Fe x O3 samples was confirmed by x-ray diffraction (XRD) data analysis. Various structural parameters such as lattice constant ( a), unit cell volume ( V), x-ray density ( ρ x), and porosity ( P) were determined using XRD data. The lattice constant ( a), x-ray density ( ρ x) and porosity ( P) decrease with an increase in Fe content x. The average particle size was calculated by using the Debye-Scherer's formula using XRD data and was 9-18 nm. The microstructural studies were investigated through scanning electron microscopy technique. Compositional stoichiometry was confirmed by energy dispersive spectrum analysis. The direct current electrical resistivity studies of the prepared samples were carried out in the temperature range of 343-1133 K using a standard two-probe method. The electrical conductivity ( σ) increases with temperature and Fe concentration. The dielectric parameters such as dielectric constant ( ɛ') and loss tangent (tan δ) were measured with frequency at room temperature in the frequency range 50 Hz to 5 MHz. The dielectric parameters show strong compositional as well as frequency dependences. The dielectric parameters were found to be higher at lower frequency.

  9. Investigation of Ba2–SrTiO4: Structural aspects and dielectric properties

    Indian Academy of Sciences (India)

    Vishnu Shanker; Tokeer Ahmad; Ashok K Ganguli

    2004-10-01

    Investigation of solid solution of barium–strontium orthotitanates of the type, Ba2–SrTiO4 (0 ≤ ≤ 2), show that pure phases exist only for the end members, Ba2TiO4 and Sr2TiO4, crystallizing in the -K2SO4 and K2NiF4 structures, respectively. The intermediate compositions (till ≤ 1) lead to a biphasic mixture of two Ba2TiO4-type phases (probably through a spinodal decomposition) with decreasing lattice parameters, indicating Sr-substitution in both the phases. For > 1, Sr2TiO4 along with a secondary phase is obtained. The dielectric constant and dielectric loss were found to decrease with Sr substitution till the nominal composition of = 1. However, pure Sr2TiO4 shows higher dielectric constant compared to the solid solution composition. Sr2TiO4 shows very high temperature stability of the dielectric constant.

  10. SOD Stack Low-k Integration for 45nm Node and Beyond

    Institute of Scientific and Technical Information of China (English)

    K. Maekawa; K. Mishima; H. Nagano; M. Kodera; K. Tokushige; H. Nagai; M. Iwashita; M. Muramatsu; K. Kubota; K. Hinata; A.Shiota; T. Kokubo; M. Hattori

    2005-01-01

    We investigated single damascene integration with Porous MSQ (Methyl-Silsesqui-oxane, k value is 2.3) and Spin on Low k MSQ (k value is 2.9) as hard mask on Porous MSQ. Mechanical property of Low k material is improved by Electron Beam (EB) Cure technology. And also One time cure of stacked Low k is successful without any problem. On integration issue of Low k material, we demonstrated low damage resist strip process by using reducing gas chemistry and clarified mechanism of new Cu corrosion mode during CMP process.

  11. Investigation of Ozone Yield of Air Fed Ozonizer by High Pressure Homogeneous Dielectric Barrier Discharge

    Science.gov (United States)

    2013-07-01

    field strength in the discharge. In order to clarify this phenomenon, further study on the gas analysis within the ozone gas by an FTIR spectrometer...31st ICPIG, July 14-19, 2013, Granada, Spain Investigation of ozone yield of air fed ozonizer by high pressure homogeneous dielectric barrier... ozonizer and found that the ozone yield is higher by the homogeneous discharge mode than by the conventional filamentary discharge mode in larger

  12. Experimental investigation of the dielectric properties of soil under hydraulic loading

    Science.gov (United States)

    Bittner, Tilman; Bore, Thierry; Wagner, Norman; Karlovšek, Jurij; Scheuermann, Alexander

    2017-04-01

    An experimental set-up was developed in order to determine the coupled hydraulic, dielectric and mechanical properties of granular media under hydraulic loading. The set-up consisted of a modified column for permeability tests involving a flow meter and pressure transducers along the sample to quantify the hydraulic gradient. A newly developed open-ended coaxial probe allowed the measurement of the frequency dependent dielectric permittivity of the material under test. The shear strength of the sample within the column was measured using a conventional vane shear device. In this paper, the overall set-up is introduced with focus on the open-ended coaxial probe. The design and calibration of the probe are introduced in detail. A numerical study showed that the sensitive cylindrical volume of the probe was approximately 150 mm in diameter with a depth of 65 mm. An investigation with glass beads showed that the set-up allowed the parameterization of the hydraulic, mechanic and dielectric parameters of granular materials under the influence of vertical flow. A satisfactorily good correlation between porosity and the real part of the dielectric permittivity was detected. The critical hydraulic gradient defining the transition of a fixed bed of particles to fluidization was characterized by a sharp peak in the evolution of the hydraulic conductivity and could easily be determined from the measurements. The shear strength of the material under test reduces linearly with increasing hydraulic gradient. Future investigations will be carried out to provide the required parameterizations for experimental and numerical investigations of the internal erosion of granular media.

  13. Synthesis and investigation of random metal-dielectric as microwave metamaterials

    Science.gov (United States)

    Khorshidi, Zahra; Bahari, Ali

    2016-08-01

    Metal-dielectric nanocomposites made of Ag nanorods embedded in Co0.05Ti0.95O2 were investigated. The effect of Ag contents on dielectric and magnetic responses of nanocomposites was studied. The results show that above the percolation threshold, the nanocomposite has metal-like behavior with negative permittivity. Moreover, the combined contributions of the magnetic resonance of ferrimagnetic Co0.05Ti0.95O2 particles and the diamagnetic response of the current loops (made of random Ag nanorod networks) bring about negative permeability in high frequency. These results indicate that the CTO-Ag 30% sample is a promising candidate for the double-negative materials.

  14. Dielectric Investigation of Parylene D Thin Films: Relaxation and Conduction Mechanisms.

    Science.gov (United States)

    Mokni, M; Kahouli, A; Jomni, F; Garden, J-L; André, E; Sylvestre, A

    2015-09-03

    Parylene is a generic name indicating a family of polymers with the basic chemical structure of poly-p-xylylene. Parylene N and Parylene C are the most popular for applications. Curiously, Parylene D (poly( dichloro-p-xylylene), (C8H6Cl2)) was forgotten for applications. This report is the consequence of a later availability of a commercial dimer of Parylene D and also to the recent advent of fluorinated Parylenes allowing extending applications at higher temperatures. In our work, from a dielectric analysis, we present the potentialities of Parylene D for applications particularly interesting for integration in organic field-effect transistors. Dielectric and electrical properties, macromolecular structures, and dynamics interaction with electric field as a function of frequency and temperature are studied in 5.8 μm thick Parylene D grown by chemical vapor deposition. More exactly, the dielectric permittivity, the dissipation factor, the electrical conductivity, and the electric modulus of Parylene D were investigated in a wide temperature and frequency ranges from -140 to +350 °C and from 0.1 Hz to 1 MHz, respectively. According to the temperature dependence of the dielectric permittivity, Parylene D has two different dielectric responses. It is retained as a nonpolar material at very low temperature (like Parylene N) and as a polar material at high temperature (like parylene C). The dissipation factor shows the manifestation of two relaxations mechanisms: γ and β at very low and high temperatures, respectively. The γ relaxation is assigned to the local motions of the C-H end of the chains when the cryogenic temperature range is approached. A broad peak in tan δ is assigned to the β relaxation. It corresponds to rotational motion of some polar C-Cl groups. For temperature above 260 °C a mechanism of Maxwell-Wagner-Sillars polarization at the amorphous/crystalline interfaces was identified with two activation energies of Ea1 = 2.12 eV and Ea2 = 3.8 e

  15. Nanocomposites of polyimide and mixed oxide nanoparticles for high performance nanohybrid gate dielectrics in flexible thin film transistors

    Science.gov (United States)

    Kim, Ju Hyun; Hwang, Byeong-Ung; Kim, Do-Il; Kim, Jin Soo; Seol, Young Gug; Kim, Tae Woong; Lee, Nae-Eung

    2017-01-01

    Organic gate dielectrics in thin film transistors (TFTs) for flexible display have advantages of high flexibility yet have the disadvantage of low dielectric constant (low-k). To supplement low-k characteristics of organic gate dielectrics, an organic/inorganic nanocomposite insulator loaded with high-k inorganic oxide nanoparticles (NPs) has been investigated but high loading of high-k NPs in polymer matrix is essential. Herein, compositing of over-coated polyimide (PI) on self-assembled (SA) layer of mixed HfO2 and ZrO2 NPs as inorganic fillers was used to make dielectric constant higher and leakage characteristics lower. A flexible TFT with lower the threshold voltage and high current on/off ratio could be fabricated by using the hybrid gate dielectric structure of the nanocomposite with SA layer of mixed NPs on ultrathin atomic-layer deposited Al2O3.

  16. Investigation of high-k yttrium copper titanate thin films as alternative gate dielectrics

    Science.gov (United States)

    Grazia Monteduro, Anna; Ameer, Zoobia; Rizzato, Silvia; Martino, Maurizio; Caricato, Anna Paola; Tasco, Vittorianna; Chaitanya Lekshmi, Indira; Hazarika, Abhijit; Choudhury, Debraj; Sarma, D. D.; Maruccio, Giuseppe

    2016-10-01

    Nearly amorphous high-k yttrium copper titanate thin films deposited by laser ablation were investigated in both metal-oxide-semiconductor (MOS) and metal-insulator-metal (MIM) junctions in order to assess the potentialities of this material as a gate oxide. The trend of dielectric parameters with film deposition shows a wide tunability for the dielectric constant and AC conductivity, with a remarkably high dielectric constant value of up to 95 for the thick films and conductivity as low as 6  ×  10-10 S cm-1 for the thin films deposited at high oxygen pressure. The AC conductivity analysis points out a decrease in the conductivity, indicating the formation of a blocking interface layer, probably due to partial oxidation of the thin films during cool-down in an oxygen atmosphere. Topography and surface potential characterizations highlight differences in the thin film microstructure as a function of the deposition conditions; these differences seem to affect their electrical properties.

  17. Investigation of NOx Reduction by Low Temperature Oxidation Using Ozone Produced by Dielectric Barrier Discharge

    DEFF Research Database (Denmark)

    Stamate, Eugen; Irimiea, Cornelia; Salewski, Mirko

    2013-01-01

    NOx reduction by low temperature oxidation using ozone produced by a dielectric barrier discharge generator is investigated for different process parameters in a 6m long reactor in serpentine arrangement using synthetic dry flue gas with NOx levels below 500 ppm, flows up to 50 slm and temperatures...... up to 80 C. The role of different mixing schemes and the impact of a steep temperature gradient are also taken into consideration. The process chemistry is monitored by Fourier transform infrared spectroscopy, chemiluminescence and absorption spectroscopy. The kinetic mechanism during the mixing...

  18. Investigation of dielectric properties of La0.33NbO3 ceramics

    Science.gov (United States)

    Mondal, Tanusree; Sarun, P. M.; Das, Sayantani; Sinha, T. P.

    2015-06-01

    La0.33NbO3 ceramics was prepared via conventional solid-state reaction method. Structural analysis show the existence of single phase of La0.33NbO3 has been synthesized with an average particle size of 2 µm - 4 µm estimated from FESEM image. Detailed investigation on the dielectric properties and AC conductivity of the La0.33NbO3 ceramics in a wide range of frequency (800 Hz - 5 MHz) and temperatures (30 °C - 300 °C) revealed that these properties are strongly temperature and frequency dependent.

  19. Optical investigation of effective permeability of dilute magnetic dielectrics with magnetic field

    Energy Technology Data Exchange (ETDEWEB)

    Banerjee, Ananya, E-mail: banerjee.ananya2008@gmail.com; Sarkar, A. [Dept. of Physics, Bijoy Krishna Girls’ College, 5/3 M.G. Road, Howrah 711101, W.B. (India)

    2016-05-06

    The prime objective of this paper is to investigate the magnetic nature of dilute magnetic dielectrics (DMD) under variation of external magnetic field. The said variation is studied over developed nano-sized Gadolinium Oxide as a DMD system. The observed experimental field variation of the effective magnetic permeability is analyzed results of optical experiment. The experiment records the variation of Brewster angle of incident polarized LASER beam from the surface of developed DMD specimen with applied out of plane external magnetic field. The effective refractive index and hence relative magnetic permeability were estimated following electro-magnetic theory. The overall results obtained and agreement between theory and experiment are good.

  20. Optical Emission Spectroscopy Investigation of a Surface Dielectric Barrier Discharge Plasma Aerodynamic Actuator

    Institute of Scientific and Technical Information of China (English)

    LI Ying-Hong; WU Yun; JIA Min; ZHOU Zhang-Wen; GUO Zhi-Gang; PU Yi-Kang

    2008-01-01

    The optical emission spectroscopy of a surface dielectric barrier discharge plasma aerodynamic actuator is investigated with different electrode configurations, applied voltages and driving frequencies. The rotational temperature of N2 (C3IIu) molecule is calculated according to its rotational emission band near 380.5 nm. The average electron energy of the discharge is evaluated by emission intensity ratio of first negative system to second positive system of N2. The rotational temperature is sensitive to the inner space of an electrode pair. The average electron energy shows insensitivity to the applied voltage, the driving frequency and the electrode configuration.

  1. Investigation of basic physical properties and dielectric behavior of a-Se-Sn-Ge-Sb system

    Science.gov (United States)

    Chaudhary, Shobhna; Modgil, Vivek; Nidhi, Anant Vidya; Kumar, Prashant; Rangra, V. S.

    2015-05-01

    The material is investigated for various physical parameters which gives us the formation about glass rigidity and glass forming ability. The cohesive energy has been interpreted using Chemical Bond Approach and glass transition temperature (Tg) has been calculated by using Tichy-Ticha approach. The decrease in glass transition temperature and weakening of structure of the material has been observed due to decrease in mean bond energy. The effect of Sb addition on the dielectric behavior of a bulk glassy material has also been studied at room temperature in the frequency range 20Hz to 1MHz.

  2. Investigation of dielectric properties of different cake formulations during microwave and infrared-microwave combination baking.

    Science.gov (United States)

    Sakiyan, Ozge; Sumnu, Gulum; Sahin, Serpil; Meda, Venkatesh

    2007-05-01

    Dielectric properties can be used to understand the behavior of food materials during microwave processing. Dielectric properties influence the level of interaction between food and high frequency electromagnetic energy. Dielectric properties are, therefore, important in the design of foods intended for microwave preparation. In this study, it was aimed to determine the variation of dielectric properties of different cake formulations during baking in microwave and infrared-microwave combination oven. In addition, the effects of formulation and temperature on dielectric properties of cake batter were examined. Dielectric constant and loss factor of cake samples were shown to be dependent on formulation, baking time, and temperature. The increase in baking time and temperature decreased dielectric constant and loss factor of all formulations. Fat content was shown to increase dielectric constant and loss factor of cakes.

  3. Carbon black networking in elastomers monitored by simultaneous rheological and dielectric investigations

    Science.gov (United States)

    Steinhauser, Dagmar; Möwes, Markus; Klüppel, Manfred

    2016-12-01

    The rheo-dielectric response of carbon black filled elastomer melts is investigated by dielectric relaxation spectroscopy in the frequency range from 0.1 Hz up to 10 MHz during oszillatory shearing in a plate-plate rheometer. Various concentrations and types of carbon blacks dispersed in a non-crosslinked EPDM melt are considered. It is demonstrated that during heat treatment at low strain amplitude a pronounced flocculation of filler particles takes place leading to a successive increase of the shear modulus and conductivity. Followed up by a strain sweep, the filler network breaks up and both quantities decrease simultaneously with increasing strain amplitude. Two relaxation times, obtained from a Cole-Cole fit of the dielectric spectra, are identified, which both decrease strongly with increasing flocculation time. This behaviour is analyzed in the frame of fractal network models, describing the effect of structural disorder of the conducting carbon black network on the diffusive charge transport. Significant deviations from the predictions of percolation theory are observed, which are traced back to a superimposed cluster-cluster aggregation process (CCA). During flocculation, a universal scaling behaviour holds between the conductivity and the corresponding high frequency relaxation time, which fits all the measured data. The scaling exponent agrees fairly well with the prediction obtained from CCA. It is demonstrated that the underlying basic mechanism is a change of the correlation length of the filler network, i.e. the size of the fractal heterogeneities. This decreases during flocculation due to the formation of additional conductive paths, making the system more homogeneous. An addition less pronounced effect is found from nanoscopic gaps between adjacent filler particles, which decrease during flocculation. The same universal scaling behaviour, as obtained for flocculation, is found for temperature-dependent dielectric measurements of the cured

  4. Epoxy-based hydrogels investigated by high-frequency dielectric relaxation spectroscopy.

    Science.gov (United States)

    Krakovský, Ivan; Shikata, Toshiyuki; Hasegawa, Ryuta

    2013-11-14

    Using high-frequency dielectric relaxation spectroscopy, nanophase-separated structures of epoxy-based hydrogels were investigated as a function of water content at 25 °C. The dielectric spectra resulting from the hydrogels were reasonably decomposed into two Debye-type and two Cole-Cole-type relaxation modes. The fastest Debye-type mode, found at 8.3 ps, was attributed to the rotational relaxation process of free water molecules in the bulk state. The other Debye-type mode, at ca. 20-34 ps, originates from the exchange process of water molecules that are hydrogen-bonded to the hydrophilic epoxy network portions for free bulk ones. The first Cole-Cole-type mode observed, at ca. 20-370 ps, was assigned to the complicated dynamics for electric dipole moments of the hydrophilic groups in the epoxy networks (mainly monomeric oxyethylene units). The slowest major Cole-Cole-type mode, at 5-29 ns, was attributed to the Maxwell-Wagner-Sillars polarization process and confirmed the presence of the nanophase-separated structures as revealed by the previous small-angle neutron scattering experiments.

  5. Current leakage relaxation and charge trapping in ultra-porous low-k materials

    Energy Technology Data Exchange (ETDEWEB)

    Borja, Juan; Plawsky, Joel L., E-mail: plawsky@rpi.edu; Gill, William N. [Howard P. Isermann Department of Chemical and Biological Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Lu, T.-M. [Department of Physics, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Bakhru, Hassaram [University at Albany' s College of Nanoscale Science and Engineering (CNSE), Albany, New York 12203 (United States)

    2014-02-28

    Time dependent dielectric failure has become a pivotal aspect of interconnect design as industry pursues integration of sub-22 nm process-technology nodes. Literature has provided key information about the role played by individual species such as electrons, holes, ions, and neutral impurity atoms. However, no mechanism has been shown to describe how such species interact and influence failure. Current leakage relaxation in low-k dielectrics was studied using bipolar field experiments to gain insight into how charge carrier flow becomes impeded by defects within the dielectric matrix. Leakage current decay was correlated to injection and trapping of electrons. We show that current relaxation upon inversion of the applied field can be described by the stretched exponential function. The kinetics of charge trapping events are consistent with a time-dependent reaction rate constant, k=k{sub 0}⋅(t+1){sup β−1}, where 0 < β < 1. Such dynamics have previously been observed in studies of charge trapping reactions in amorphous solids by W. H. Hamill and K. Funabashi, Phys. Rev. B 16, 5523–5527 (1977). We explain the relaxation process in charge trapping events by introducing a nonlinear charge trapping model. This model provides a description on the manner in which the transport of mobile defects affects the long-tail current relaxation processes in low-k films.

  6. Current leakage relaxation and charge trapping in ultra-porous low-k materials

    Science.gov (United States)

    Borja, Juan; Plawsky, Joel L.; Lu, T.-M.; Bakhru, Hassaram; Gill, William N.

    2014-02-01

    Time dependent dielectric failure has become a pivotal aspect of interconnect design as industry pursues integration of sub-22 nm process-technology nodes. Literature has provided key information about the role played by individual species such as electrons, holes, ions, and neutral impurity atoms. However, no mechanism has been shown to describe how such species interact and influence failure. Current leakage relaxation in low-k dielectrics was studied using bipolar field experiments to gain insight into how charge carrier flow becomes impeded by defects within the dielectric matrix. Leakage current decay was correlated to injection and trapping of electrons. We show that current relaxation upon inversion of the applied field can be described by the stretched exponential function. The kinetics of charge trapping events are consistent with a time-dependent reaction rate constant, k =k0ṡ(t+1)β -1, where 0 < β < 1. Such dynamics have previously been observed in studies of charge trapping reactions in amorphous solids by W. H. Hamill and K. Funabashi, Phys. Rev. B 16, 5523-5527 (1977). We explain the relaxation process in charge trapping events by introducing a nonlinear charge trapping model. This model provides a description on the manner in which the transport of mobile defects affects the long-tail current relaxation processes in low-k films.

  7. Investigation of Ultraviolet Light Curable Polysilsesquioxane Gate Dielectric Layers for Pentacene Thin Film Transistors.

    Science.gov (United States)

    Shibao, Hideto; Nakahara, Yoshio; Uno, Kazuyuki; Tanaka, Ichiro

    2016-04-01

    Polysilsesquioxane (PSQ) comprising 3-methacryloxypropyl groups was investigated as an ultraviolet (UV)-light curable gate dielectric-material for pentacene thin film transistors (TFTs). The surface of UV-light cured PSQ films was smoother than that of thermally cured ones, and the pentacene layers deposited on the UV-Iight cured PSQ films consisted of larger grains. However, carrier mobility of the TFTs using the UV-light cured PSQ films was lower than that of the TFTs using the thermally cured ones. It was shown that the cross-linker molecules, which were only added to the UV-light cured PSQ films, worked as a major mobility-limiting factor for the TFTs.

  8. Investigation of Plasma Polymerized Maleic Anhydride Film in a Middle Frequency Dielectric Barrier Discharge

    Institute of Scientific and Technical Information of China (English)

    TANG Wenjie; CHEN Qiang; ZHANG Yuefei; GE Yuanjing

    2008-01-01

    Plasma polymerized maleic anhydride (MA) was carried out by using maleic anhydride supersaturated ethanol solution as a precursor in a dielectric barrier discharge (DBD). The film properties were characterized by water contact angle (WCA), Fourier transfer infrared (FTIR), X-ray photoelectron spectroscopy (XPS), atomic force microscope (AFM) analysis, and a thickness profilometer. The influence of the processing parameters on the film properties such as the power frequency, and polymerization zone was investigated. The results show that anhydride group incorporated into the growing films is favorable at the frequency of 80 kHz and working pressure of 50 Pa. The poly (maleic anhydride) film is uniform and compact at an average deposition rate of 8 nm/min.

  9. Investigation of nanosecond-pulsed dielectric barrier discharge actuators with powered electrodes of different exposures

    Science.gov (United States)

    Xu, Shuangyan; Cai, Jinsheng; Lian, Yongsheng

    2017-09-01

    Nanosecond-pulsed dielectric barrier discharge actuators with powered electrodes of different exposures were investigated numerically by using a newly proposed plasma kinetic model. The governing equations include the coupled continuity plasma discharge equation, drift-diffusion equation, electron energy equation, Poisson’s equation, and the Navier-Stokes equations. Powered electrodes of three different exposures were simulated to understand the effect of surface exposure on plasma discharge and surrounding flow field. Our study showed that the fully exposed powered electrode resulted in earlier reduced electric field breakdown and more intensive discharge characteristics than partially exposed and rounded-exposed ones. Our study also showed that the reduced electric field and heat release concentrated near the right upper tip of the powered electrode. The fully exposed electrode also led to stronger shock wave, higher heating temperature, and larger heated area.

  10. Structural, optical and dielectric investigation of CdFe2O4 nanoparticles

    Science.gov (United States)

    Sagadevan, Suresh; Pal, Kaushik; Zaman Chowdhury, Zaira; Enamul Hoque, Md

    2017-07-01

    A simple thermal decomposition technique has been executed for the synthesis of cadmium ferrite (CdFe2O4) nanoparticles. With the help of x-ray diffraction; scanning electron microscopy, energy-dispersive x-ray spectroscopy (EDS) and Fourier transform infrared spectroscopy the prepared nanoparticles were identified. The crystal size of the average particles aggregated and was found approximately to be 10-14 nm by means of XRD studies. However, the results of high-resolution transmission electron microscopy (HR-TEM) investigation ensured distinguished nanoparticles, and also the polycrystalline nature of those nanoparticles was confirmed by selected area diffraction (SAED) patterns. The scanning electron microscopy (SEM) images explored a random distribution of grains within the sample. Thin film surface topology of roughness and surface current measurement were studied by atomic force microscopy (TP-AFM, C-AFM). Hence, from the ultraviolet-visible (UV) spectroscopic absorption illustrated significant optical properties. Moreover, the optical energy band gap (E g) of CdFe2O4 nanoparticle was determined to be 1.74 eV. By studying the variation of dielectric constant and dielectric loss with respect to frequency, the CdFe2O4 nanoparticles electrical properties were analyzed. Analysis in the real and imaginary part of impedance explained their frequency and temperature dependence of the CdFe2O4 nanoparticles. The traditional solution-phase organometallic approach provides an effective way to synthesize high quality hydrophobic semiconductor-CdFe2O4 nanoparticles. Our simple, cost-effective approach is quite general, which is applicable to other nanomaterials, and it utilizes the currently mature in Nano-chemistry. The nanocomposite assemblies’ exhibit strong anisotropic optical and electrical properties are open up new possibilities in remarkable applications for optoelectronics in the near future.

  11. Investigation of PVC physical ageing in field test specimens using ultrasonic and dielectric measurements

    NARCIS (Netherlands)

    Demcenko, A.; Ravanan, M.; Visser, Roy; Loendersloot, Richard; Akkerman, Remko

    2013-01-01

    Physical ageing in PVC is studied using two techniques: a) non-linear ultrasonic measurements based on the non-collinear wave interaction theory and b) dielectric measurements. The ultrasonic measurement results are compared with dielectric measurement results. The comparison shows that the used

  12. Investigation Of Dielectric Behaviors Of Nanoclay Filled Epoxy And PP/NYLON66 Nanocomposites For Cable Insulation Application

    Science.gov (United States)

    Rashmi, Renukappa, N. M.; Siddaramaiah

    2010-10-01

    High performance polymer nanocomposites are emerging as a new class of materials for its demanding applications as insulating material. The outstanding properties of nanoclay make them an attractive candidate for preparing advanced composite materials with multi functional features for electrical and electronics applications. A series of nanoclay incorporated epoxy and polypropylene/nylon66 (50/50 blend) nanocomposites have been prepared via chemical and melt mixing methods respectively. The fabricated nanocomposites have been characterized for dielectric behaviors such as dielectric constant (ɛ r ) and dissipation factor (tan δ). The effect of filler content, frequency, temperature and sea water ageing on dielectric behavior of nanocomposites has been investigated. The variation in the diffusion coefficient (D) of the material aged in water at different temperature with different percentage of nanoclay loaded epoxy and PP/nylon66 nanocomposites were calculated. It is observed that at increase in ageing temperature relatively increases the diffusion coefficient of the material. The measured dielectric results of the nanocomposites reveals that a significant influence of frequency and sea water ageing and marginal change with temperature. Higher dielectric constant was noticed for epoxy nanocomposites as compared to PP/nylon66 composites

  13. Investigation of optical and interfacial properties of Ag/Ta{sub 2}O{sub 5} metal dielectric multilayer structure

    Energy Technology Data Exchange (ETDEWEB)

    Sarkar, P., E-mail: piyali.sarkar4@gmail.com; Jena, S.; Tokas, R. B.; Thakur, S.; Sahoo, N. K. [Atomic & Molecular Physics Division, Bhabha Atomic Research Centre, Mumbai-400085 (India); Rao, K. D.; Misal, J. S.; Prathap, C. [Optics and Thin Film Laboratory, BARC-Vizag, Autonagar, Visakhapatnam-530012 (India)

    2015-06-24

    One-dimensional periodic metal-dielectric multilayer thin film structures consisting of Ag and Ta{sub 2}O{sub 5} alternating layers are deposited on glass substrate using RF magnetron sputtering technique. The spectral property of the multilayers has been investigated using spectrophotometry technique. The optical parameters such as refractive index, extinction coefficient, band gap etc., along with film thickness as well as the interfacial layer properties which influence these properties have been probed with spectroscopic ellipsometry technique. Atomic force microscopy has been employed to characterize morphological properties of this metal-dielectric multilayer.

  14. The use of dielectric spectroscopy in the investigation of the effect of polymer choice on the flocculation of polystyrene particles

    DEFF Research Database (Denmark)

    Christensen, Peter Vittrup; Hinge, Mogens; Keiding, Kristian

    2009-01-01

    The flocculation of colloidal suspensions using synthetic polymeric flocculants is an important operation in separation processes. Optimizing flocculant use requires insight into the underlying mechanisms governing flocculation. As most existing methods for the online characterization of floccula......The flocculation of colloidal suspensions using synthetic polymeric flocculants is an important operation in separation processes. Optimizing flocculant use requires insight into the underlying mechanisms governing flocculation. As most existing methods for the online characterization...... of flocculation processes can only be used on dilute suspensions, new methods applicable at high solid content levels are of interest. This study used dielectric spectroscopy to investigate the mechanisms involved in the flocculation of polystyrene particles with three different cationic polymers. We observed...... that the relaxation time of the dielectric dispersion increased as particle flocculation was initiated. Reduction of particle charge due to polymer addition was found to reduce the magnitude of the dielectric dispersion, whereas the formation of aggregates increased it. This resulted in decreasing magnitude when...

  15. SPAK-mediated NCC regulation in response to low-K+ diet.

    Science.gov (United States)

    Wade, James B; Liu, Jie; Coleman, Richard; Grimm, P Richard; Delpire, Eric; Welling, Paul A

    2015-04-15

    The NaCl cotransporter (NCC) of the renal distal convoluted tubule is stimulated by low-K(+) diet by an unknown mechanism. Since recent work has shown that the STE20/SPS-1-related proline-alanine-rich protein kinase (SPAK) can function to stimulate NCC by phosphorylation of specific N-terminal sites, we investigated whether the NCC response to low-K(+) diet is mediated by SPAK. Using phospho-specific antibodies in Western blot and immunolocalization studies of wild-type and SPAK knockout (SPAK(-/-)) mice fed a low-K(+) or control diet for 4 days, we found that low-K(+) diet strongly increased total NCC expression and phosphorylation of NCC. This was associated with an increase in total SPAK expression in cortical homogenates and an increase in phosphorylation of SPAK at the S383 activation site. The increased pNCC in response to low-K(+) diet was blunted but not completely inhibited in SPAK(-/-) mice. These findings reveal that SPAK is an important mediator of the increased NCC activation by phosphorylation that occurs in the distal convoluted tubule in response to a low-K(+) diet, but other low-potassium-activated kinases are likely to be involved. Copyright © 2015 the American Physiological Society.

  16. A New Bio-based Dielectric Material.

    Science.gov (United States)

    Zhan, Mingjiang; Wool, Richard P.

    2007-03-01

    Low dielectric constant (low-k) materials are widely used in modern high-speed microelectronics, such as printed circuit boards. A new bio-based composite was developed from soybean oil and chicken feather fibers, which has the potential to replace currently used petroleum-based dielectrics. Feather fibers have a unique hollow structure which distinguishes them from glass fibers and give very attractive properties. Due to the retained air in the hollow fibers, the dielectric constant can be lower than conventional epoxy-based dielectrics at both low and high frequencies. The coefficients of thermal expansion (CTE) of the materials decrease with addition of feather fibers and even can be negative. By controlling the fraction of fibers, delamination caused by CTE mismatch between the dielectric and the metal lines can be avoided. The enhancement of adhesion between copper surface and polymer matrix was investigated. The tough structure of fibers significantly improved the mechanical properties of the composites, such as flexural properties and storage modulus. Supported by USDA

  17. Investigation of dielectric relaxation in systems with hierarchical organization: From time to frequency domain and back again

    Energy Technology Data Exchange (ETDEWEB)

    Yokoi, Koki [Department of Physics, University of Wisconsin-Milwaukee, Milwaukee, WI (United States); Raicu, Valerică, E-mail: vraicu@uwm.edu [Department of Physics, University of Wisconsin-Milwaukee, Milwaukee, WI (United States); Department of Biological Sciences, University of Wisconsin-Milwaukee, Milwaukee, WI (United States)

    2017-06-28

    Relaxation in fractal structures was investigated theoretically starting from a simple model of a Cantorian tree and kinetic equations linking the change in the number of particles (e.g., electrical charges) populating each branch of the tree and their transfer to other branches or to the ground state. We numerically solved the system of differential equations obtained and determined the so-called cumulative distribution function of particles, which, in dielectric or mechanical relaxation parlance, is the same as the relaxation function of the system. As a physical application, we studied the relationship between the dielectric relaxation in time-domain and the dielectric dispersion in the frequency-domain. Upon choosing appropriate rate constants, our model described accurately well-known non-exponential and non-Debye time- and frequency-domain functions, such as stretched exponentials, Havrilliak–Negami, and frequency power law. Our approach opens the door to applying kinetic models to describe a wide array of relaxation processes, which traditionally have posed great challenges to theoretical modeling based on first principles. - Highlights: • Relaxation was investigated for a system of particles flowing through a Cantorian tree. • A set of kinetic equations was formulated and used to compute the relaxation function of the system. • The dispersion function of the system was computed from the relaxation function. • An analytical method was used to recover the original relaxation function from the dispersion function. • This formalism was used to study dielectric relaxation and dispersion in fractal structures.

  18. Curing kinetics of visible light curing dental resin composites investigated by dielectric analysis (DEA).

    Science.gov (United States)

    Steinhaus, Johannes; Hausnerova, Berenika; Haenel, Thomas; Großgarten, Mandy; Möginger, Bernhard

    2014-03-01

    During the curing process of light curing dental composites the mobility of molecules and molecule segments is reduced leading to a significant increase of the viscosity as well as the ion viscosity. Thus, the kinetics of the curing behavior of 6 different composites was derived from dielectric analysis (DEA) using especially redesigned flat sensors with interdigit comb electrodes allowing for irradiation at the top side and measuring the ion viscosity at the bottom side. As the ion viscosities of dental composites change 1-3 orders of magnitude during the curing process, DEA provides a sensitive approach to evaluate their curing behavior, especially in the phase of undisturbed chain growth. In order to determine quantitative kinetic parameters a kinetic model is presented and examined for the evaluation of the ion viscosity curves. From the obtained results it is seen that DEA might be employed in the investigation of the primary curing process, the quality assurance of ingredients as well as the control of processing stability of the light curing dental composites. Copyright © 2014 Academy of Dental Materials. Published by Elsevier Ltd. All rights reserved.

  19. Investigation of optical properties of multilayer dielectric structures using prism-coupling technique

    Energy Technology Data Exchange (ETDEWEB)

    Sokolov, V I; Glebov, V N; Malyutin, A M; Molchanova, S I; Khaydukov, E V; Panchenko, V Ya [Institute on Laser and Information Technologies, Russian Academy of Sciences, Shatura, Moscow Region (Russian Federation)

    2015-09-30

    A method based on resonant excitation of waveguide modes with a prism coupler is proposed for measuring the thickness and refractive index of thin-film layers in multilayer dielectric structures. The peculiarities of reflection of TE- and TM-polarised light beams from a structure comprising eleven alternating layers of zinc sulfide (ZnS) and magnesium barium fluoride (MgBaF{sub 4}), whose thicknesses are much less than the wavelength of light, are investigated. Using the mathematical model developed, we have calculated the coefficients of reflection of collimated TE and TM light beams from a multilayer structure and determined the optical constants and thicknesses of the structure layers. The refractive indices of the layers, obtained for TE and TM polarisation of incident light, are in good agreement. The thicknesses of ZnS and MgBaF{sub 4} layers, found for different polarisations, coincide with an accuracy of ±1%. Thus, we have demonstrated for the first time that the prism-coupling technique allows one to determine the optical properties of thin-film structures when the number of layers in the structure exceeds ten layers. (integrated optics)

  20. Theoretical investigation on nonlinear optical effects in laser trapping of dielectric nanoparticles with ultrafast pulsed excitation.

    Science.gov (United States)

    Devi, Anita; De, Arijit K

    2016-09-19

    The use of low-power high-repetition-rate ultrafast pulsed excitation in stable optical trapping of dielectric nanoparticles has been demonstrated in the recent past; the high peak power of each pulse leads to instantaneous trapping of a nanoparticle with fast inertial response and the high repetition-rate ensures repetitive trapping by successive pulses However, with such high peak power pulsed excitation under a tight focusing condition, nonlinear optical effects on trapping efficiency also become significant and cannot be ignored. Thus, in addition to the above mentioned repetitive instantaneous trapping, trapping efficiency under pulsed excitation is also influenced by the optical Kerr effect, which we theoretically investigate here. Using dipole approximation we show that with an increase in laser power the radial component of the trapping potential becomes progressively more stable but the axial component is dramatically modulated due to increased Kerr nonlinearity. We justify that the relevant parameter to quantify the trapping efficiency is not the absolute depth of the highly asymmetric axial trapping potential but the height of the potential barrier along the beam propagation direction. We also discuss the optimal excitation parameters leading to the most stable dipole trap. Our results show excellent agreement with previous experiments.

  1. Preliminary Investigation of a Dielectric Barrier Discharge Lamp in Open Air at Atmospheric Pressure

    Institute of Scientific and Technical Information of China (English)

    LIU Feng; WANG Wei-Wei; CHANG Xi-Jiang; LIANG Rong-Qing

    2011-01-01

    @@ A dielectric barrier discharge (DBD) lamp is investigated by using sinusoidal power with a 10 kHz frequency in open air at atmospheric pressure.With increasing applied voltages, the different discharge phenomena appear.At relatively low voltages, the discharge states are general stochastic filamentary discharges with weak light.However, at relatively high voltages, the walls of quartz tubes are heated sharply by plasma, and then the dazzling light is emitted very quickly to form the DBD Lamp, corresponding to the low maintaining voltage that is lower than the ignited voltage.The discharge state or mode of the DBD lamp that corresponds to the glow discharge is deduced according to the wave form of the circuit current, which is evidently different from the filamentary discharges.Under these conditions, the spectrum of the DBD lamp is continuous in the range 400-932nm, which is scanned in the range 300-932nm.It is also shown that there is another discharge state or mode that is different from the traditional filamentary discharges.Therefore, it is concluded that the discharge state or mode of the DBD lamp is a glow discharge.

  2. Ultrafast Breakdown of dielectrics: Energy absorption mechanisms investigated by double pulse experiments

    Energy Technology Data Exchange (ETDEWEB)

    Guizard, Stéphane, E-mail: stephane.guizard@cea.fr [Laboratoire des Solides Irradiés, CEA-IRAMIS, CNRS, Ecole Polytechnique, 91128 Palaiseau (France); Klimentov, Sergey [General Physics Institute of the Russian Academy of Sciences, Vavilova St 38, 11991 Moscow (Russian Federation); Mouskeftaras, Alexandros [Laboratoire des Solides Irradiés, CEA-IRAMIS, CNRS, Ecole Polytechnique, 91128 Palaiseau (France); Fedorov, Nikita; Geoffroy, Ghita [Laboratoire CELIA, CNRS-CEA-Université de Bordeaux, Cours de La Libération, Talence (France); Vilmart, Gautier [Laboratoire des Solides Irradiés, CEA-IRAMIS, CNRS, Ecole Polytechnique, 91128 Palaiseau (France)

    2015-05-01

    We investigate the mechanisms involved in the modification of dielectric materials by ultrashort laser pulses. We show that the use of a double pulse (fundamental and second harmonic of a Ti–Sa laser) excitation allows getting new insight in the fundamental processes that occur during the interaction. We first measure the optical breakdown (OB) threshold map (intensity of first pulse versus intensity of second pulse) in various materials (Al{sub 2}O{sub 3}, MgO, α-SiO{sub 2}). Using a simple model that includes multiphoton excitation followed by carrier heating in the conduction band, and assuming that OB occurs when a critical amount of energy is deposited in the material, we can satisfactorily reproduce this evolution of optical breakdown thresholds. The results demonstrate the dominant role of carrier heating in the energy transfer from the laser pulse to the solid. This important phenomenon is also highlighted by the kinetic energy distribution of photoelectrons observed in a photoemission experiment performed under similar conditions of double pulse excitation. Finally we show, in the case of α-SiO{sub 2}, that the initial electronic excitation plays a key role in the formation of surface ripples and that their characteristics are determined by the first pulse, even at intensities well below OB threshold.

  3. Investigation on nonlinear optical and dielectric properties of L-arginine doped ZTC crystal to explore photonic device applications

    Directory of Open Access Journals (Sweden)

    Anis Mohd

    2016-09-01

    Full Text Available The present study is focused to explore the photonic device applications of L-arginine doped ZTC (LA-ZTC crystals using nonlinear optical (NLO and dielectric studies. The LA-ZTC crystals have been grown by slow evaporation solution technique. The chemical composition and surface of LA-ZTC crystal have been analyzed by means of energy dispersive spectroscopy (EDS and surface scanning electron microscopy (SEM techniques. The Vicker’s microhardness study has been carried out to determine the hardness, work hardening index, yield strength and elastic stiffness of LA-ZTC crystal. The enhanced SHG efficiency of LA-ZTC crystal has been ascertained using the Kurtz-Perry powder SHG test. The closed-and-open aperture Z-scan technique has been employed to confirm the third order nonlinear optical nature of LA-ZTC crystal. The Z-scan transmittance data has been utilized to calculate the superior cubic susceptibility, nonlinear refractive index, nonlinear absorption coefficient and figure of merit of LA-ZTC crystal. The behavior of dielectric constant and dielectric loss of LA-ZTC crystal at different temperatures has been investigated using the dielectric analysis.

  4. The Experimental Investigations of Dielectric Barrier Discharge and Pulse Corona Discharge in Air Cleaning

    Institute of Scientific and Technical Information of China (English)

    左莉; 侯立安; 杨林松

    2003-01-01

    The dielectric barrier discharge (DBD) and pulse corona discharge(PCD) plasmagenerator was used to remove NH3, H2S, C7Hs etc. from atmosphere. The principle and charac-teristic of the two ways was discussed in the article. The test shows the result of PCD is betterthan that of DBD.

  5. A new investigation of dielectric relaxation processes in smoky quartz crystals

    NARCIS (Netherlands)

    Vos, W.J. de; Volger, J.

    1967-01-01

    Dielectric loss measurements on smoky quartz crystals over a wide frequency and temperature range (200 Hz-2.5 MHz and 20.4–160°K) showed, besides the well-known relaxation process at low temperatures, also a new relaxation mechanism, which becomes dominant above 100°K. There are strong arguments tha

  6. Effects of plasma and vacuum-ultraviolet exposure on the mechanical properties of low-k porous organosilicate glass

    Energy Technology Data Exchange (ETDEWEB)

    Guo, X.; Shohet, J. L. [Plasma Processing and Technology Laboratory and Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Jakes, J. E. [Performance Enhanced Biopolymers, USDA Forest Service Forest Products Laboratory, Madison, Wisconsin 53726 (United States); Banna, S. [Applied Materials, Sunnyvale, California 94085 (United States); Nishi, Y. [Stanford University, Stanford, California 94305 (United States)

    2014-07-28

    The effects of plasma exposure and vacuum-ultraviolet (VUV) irradiation on the mechanical properties of low-k porous organosilicate glass (SiCOH) dielectric films were investigated. Nanoindentation measurements were made on SiCOH films before and after exposure to an electron-cyclotron-resonance plasma or a monochromatic synchrotron VUV beam, to determine the changes of film hardness, elastic modulus, and crack threshold due to these exposures. This permits the effects of ion bombardment and photon bombardment to be analyzed separately. The role of energetic ions was examined with a variety of inert plasma-exposure conditions. The role of VUV photons was analyzed as a function of synchrotron photon energy. It was found that both energetic ions and VUV photons with energies larger than the bond energy of the Si-O bond cause a significant increase in film hardness along with a smaller increase in elastic modulus and crack threshold. Differential Fourier transform infrared spectra and x-ray photoemission spectroscopy results show that the energetic ions affect the SiCOH properties mainly through physical bombardment, during which the ions transfer their momentum to the Si-O-Si backbone and transform them into more energetically stable Si-O-Si network structures. This results in the Si-O-Si network structures becoming densified. VUV photons assist reaction that increase the number of bridging O{sub 3}≡Si-O-Si≡O{sub 3} bonds and deplete nonbridging O{sub 3}≡Si-O and C-Si≡O{sub 3} bonds. This increased degree of cross linking in porous organosilicate dielectrics can substantially enhance their hardness and elastic modulus while showing no significant film shrinkage or densification.

  7. Investigation of dielectric substrates on electrical and optical performance of wafer-scale graphene using non-contact methods

    Science.gov (United States)

    Wang, Dong; Ning, Jing; Zhang, Jincheng; Guo, Lixin; Hao, Yue

    2017-10-01

    Here we systemically discussed the influence of dielectric substrates on the surface morphology, electrical and optical performance of transferred graphene. The electrical properties were investigated using a microwave-probing technique without metal-graphene contact. We found that a complex mechanism governed the influence of the surface properties of the dielectric substrates, such as morphology, hydrophilicity, crystallinity, and polarization, on the performance of the graphene. We also found that graphene on r-Al2O3 was more effective for graphene-based devices with a high carrier mobility of ˜5000 cm2 V-1 s-1. This provides a new method to choose the most suitable substrate for fabricating graphene-based devices.

  8. Investigation of temperature dependent dielectric constant of a sputtered TiN thin film by spectroscopic ellipsometry

    Science.gov (United States)

    Tripura Sundari, S.; Ramaseshan, R.; Jose, Feby; Dash, S.; Tyagi, A. K.

    2014-01-01

    The temperature dependence of optical constants of titanium nitride thin film is investigated using Spectroscopic Ellipsometry (SE) between 1.4 and 5 eV in the temperature range of 300 K to 650 K in steps of 50 K. The real and imaginary parts of the dielectric functions ɛ1(E) and ɛ2(E) marginally increase with increase in temperature. A Drude Lorentz dielectric analysis based on free electron and oscillator model are carried out to describe the temperature behavior. With increase in temperature, the unscreened plasma frequency and broadening marginally decreased and increased, respectively. The parameters of the Lorentz oscillator model also showed that the relaxation time decreased with temperature while the oscillator energies increased. This study shows that owing to the marginal change in the refractive index with temperature, titanium nitride can be employed for surface plasmon sensor applications even in environments where rise in temperature is imminent.

  9. Investigations on laser printing of microcapacitors using poly (methyl methacrylate) dielectric thin films for organic electronics applications

    Science.gov (United States)

    Constantinescu, Catalin; Rapp, Ludovic; Delaporte, Philippe; Alloncle, Anne-Patricia

    2016-06-01

    Thin solid pixels made of Ag/PMMA stacks have been fabricated by laser-induced forward transfer (LIFT), to be tested as thin film microcapacitors in organic electronics applications. The square-shaped laser-printed pixels have a lateral size of ∼350 μm, and the thickness of the dielectric film was varied between 100 and 1500 nm. The pixels were deposited on electrode structures made by LIFT printing of silver nanoparticles ink and paste. Optimal printing conditions led to the fabrication of microcapacitors with typical capacitance in the pF range, tuned by changing the properties of the multilayered structure (e.g. pixel size and/or thickness of the dielectric). Their stability was also investigated over time. We discuss on the morphological and electrical properties of such laser-printed structures, with respect to the impact resistance of the polymer and its suitability for the LIFT process.

  10. Investigation of bandgap modulation, field emission and dielectric properties of cadmium doped CaCu3 Ti4O12

    Science.gov (United States)

    Maitra, S.; Mitra, R.; Bera, K. P.; Nath, T. K.

    2017-05-01

    We have prepared cadmium doped CCTO (Ca1-xCdxCu3Ti4O12 where x = 0.01, 0.02, 0.03, 0.04, 0.05) by Molten Salt Synthesis technique. It has exhibited high level of crystallinity and a well defined micrometre sized grains with uniform cubic morphology, as confirmed by a combination of X-ray diffraction and field emission scanning electron microscopy. Thereby we have found the modulation of its semiconducting bandgap as a function of doping from recorded UV-Vis reflectance spectra using Kubelka Munk (KM) method where with increasing Cadmium doping content the bandgap is found to increase. We have also carried out investigation on the field emission properties of CCTO crystals and it has exhibited poor field emission characteristics. Finally, we have investigated the dielectric properties of CCTO as a function of temperature. It has exhibited a giant dielectric property with low loss over a considerable temperature regime (50-300°C) and is found to exhibit Maxwell Wagner type dielectric relaxation.

  11. Investigations on electrical conductivity and dielectric properties of Na doped ZnO synthesized from sol gel method

    Energy Technology Data Exchange (ETDEWEB)

    Tabib, Asma; Sdiri, Nasr [Laboratoire de Physico-Chimie des Matériaux Minéraux et leurs Applications, Centre National de Recherches en Sciences des Matériaux, B.P. 95 Hammam-Lif, 2050 (Tunisia); Elhouichet, Habib, E-mail: habib.elhouichet@fst.rnu.tn [Laboratoire de Physico-Chimie des Matériaux Minéraux et leurs Applications, Centre National de Recherches en Sciences des Matériaux, B.P. 95 Hammam-Lif, 2050 (Tunisia); Département de Physique, Faculté des Sciences de Tunis, University Tunis El Manar, Tunis 2092 (Tunisia); Férid, Mokhtar [Laboratoire de Physico-Chimie des Matériaux Minéraux et leurs Applications, Centre National de Recherches en Sciences des Matériaux, B.P. 95 Hammam-Lif, 2050 (Tunisia)

    2015-02-15

    Highlights: • ZnO nanoparticles doped with Na were prepared from sol-gel method. • Electric conductivity and dielectric properties were investigated. • The ZnO conductivity is estimated to be of p-type for critical Na doping of 1.5% at. - Abstract: Na doped ZnO nanoparticles (NPs) were elaborated by sol gel technique. The X-ray diffraction patterns show that the peaks are indexed to the hexagonal structure without any trace of an extra phase. Electric and dielectric properties were investigated using complex impedance spectroscopy. The impedance spectra were analyzed in terms of equivalent circuits involving resistors, capacitors and constant phase elements (CPE). The contribution of grain boundary resistance to the total resistance of the system is remarkable. The AC conductivity increases with temperature following the Arrhenius law, with single apparent activation energy for conduction process. The frequency dependence of the electric conductivity follows a simple power law behavior, in according to relation σ{sub AC}(ω) = σ(0) + A ω{sup s}, where s is smaller than 1. The analysis of dc conductivity indicates that the conduction is ionic in nature. The study of its variation, at fixed temperature, with Na content shows sharp decrease which is explained by the formation of Na{sub Zn} acceptor. It was found that the dc conductivity reaches its minimum value for critical Na concentration of 1.5% at which the conductivity is estimated to be of p-type. Impedance and modulus study reveals the temperature dependent non-Debye type relaxation phenomenon. Dielectric studies revealed a promising dielectric properties (relatively high ε′ at low frequencies and low loss at high frequencies). In the low-frequency region, the values of M′ tends to zero suggesting negligible or absent electrode polarization phenomenon. The frequency dependent maxima in the imaginary modulus are found to obey to Arrhenius law.

  12. State of water in starch-water systems in the gelatinization temperature range as investigated using dielectric relaxation spectroscopy

    Science.gov (United States)

    Motwani, Tanuj

    Starch-water interactions occurring during gelatinization are critical for developing a mechanistic understanding of the gelatinization process. The overall goal of this project was to investigate the state of water in starch-water systems in the gelatinization temperature range using dielectric relaxation spectroscopy. In the first part of the project, the dielectric response of native wheat starch-water slurries was measured at seven different starch concentrations between 5--60% starch (w/w) in the frequency range of 200 MHz--20 GHz at 25°C. The deconvolution of the dielectric spectra using the Debye model revealed presence of up to three relaxation processes. The relaxation time range of what were considered to be the high, intermediate and low frequency relaxations were 4--9 ps, 20--25 ps and 230--620 ps, respectively. The high frequency relaxation was observed at all starch concentrations, while the intermediate and low frequency relaxation were only observed at starch concentrations of 10% and above, and 30% and above, respectively. The high frequency relaxation was attributed to bulk water, while the intermediate and low frequency relaxations were attributed to rotationally restrained water molecules present in the starch-water system. To investigate the state of water in the gelatinization temperature range, the dielectric response, gelatinization enthalpy and water absorption by 10%, 30% or 50% starch slurries were measured after heating the slurries to different end temperatures between 40--90°C for 30 min. The high frequency relaxation time for 10% starch slurry dropped significantly (P0.159) by heating up to 80°C. The intermediate and low frequency relaxation times were not significantly influenced (P>0.712) by heating for all starch concentrations. Also, the amount of water associated with the three relaxations was not significantly influenced by heating (P >0.187). The water absorption results indicated that highest water uptake was achieved in

  13. Surface Modification of Textured Dielectrics and Their Wetting Behavior

    Science.gov (United States)

    Kumar, Vijay; Dhillon, Ajaypal Singh; Sharma, Niti Nipun

    2017-02-01

    Controlling the wettability on dielectric materials is a classical topic in surface engineering. Surface texturing and deposition of self-assembled monolayers (SAMs) are major approaches to achieve lower or higher water contact angle ( θ c) and thereby making surface less or more wettable (more hydrophobic). Dielectric surfaces wetting has been engineered by surface modification and has been shown to achieve θ c to a maximum of 120° ± 5°. Further improvement in θ c to an extent greater than 150° ± 5° is desired to render the surface superhydrophobic. We report in this work an achievement of θ c > 150° ± 5° by combining the plasma-treated surface and octadecyltrichlorosilane (OTS) SAMs deposition on dielectrics, and this had been shown on dielectric ranging from low- k to high- k values. The improvement in wetting behavior and quality of dielectric surface with monolayer on plasma-treated surfaces are (is) investigated and characterized using atomic-force microscope (AFM), scanning electron microscope (SEM), contact angle goniometer, and Raman spectroscopy and x-ray photoelectron spectroscopy (XPS) and are compared with untreated dielectric surface with OTS monolayers.

  14. Surface Modification of Textured Dielectrics and Their Wetting Behavior

    Science.gov (United States)

    Kumar, Vijay; Dhillon, Ajaypal Singh; Sharma, Niti Nipun

    2017-01-01

    Controlling the wettability on dielectric materials is a classical topic in surface engineering. Surface texturing and deposition of self-assembled monolayers (SAMs) are major approaches to achieve lower or higher water contact angle (θ c) and thereby making surface less or more wettable (more hydrophobic). Dielectric surfaces wetting has been engineered by surface modification and has been shown to achieve θ c to a maximum of 120° ± 5°. Further improvement in θ c to an extent greater than 150° ± 5° is desired to render the surface superhydrophobic. We report in this work an achievement of θ c > 150° ± 5° by combining the plasma-treated surface and octadecyltrichlorosilane (OTS) SAMs deposition on dielectrics, and this had been shown on dielectric ranging from low-k to high-k values. The improvement in wetting behavior and quality of dielectric surface with monolayer on plasma-treated surfaces are (is) investigated and characterized using atomic-force microscope (AFM), scanning electron microscope (SEM), contact angle goniometer, and Raman spectroscopy and x-ray photoelectron spectroscopy (XPS) and are compared with untreated dielectric surface with OTS monolayers.

  15. Investigation of mechanism of anode plasma formation in ion diode with dielectric anode

    Science.gov (United States)

    Pushkarev, A.

    2015-10-01

    The results of investigation of the anode plasma formation in a diode with a passive anode in magnetic insulation mode are presented. The experiments have been conducted using the BIPPAB-450 ion accelerator (350-400 kV, 6-8 kA, 80 ns) with a focusing conical diode with Br external magnetic field (a barrel diode). For analysis of plasma formation at the anode and the distribution of the ions beam energy density, infrared imaging diagnostics (spatial resolution of 1-2 mm) is used. For analysis of the ion beam composition, time-of-flight diagnostics (temporal resolution of 1 ns) were used. Our studies have shown that when the magnetic induction in the A-C gap is much larger than the critical value, the ion beam energy density is close to the one-dimensional Child-Langmuir limit on the entire working surface of the diode. Formation of anode plasma takes place only by the flashover of the dielectric anode surface. In this mode, the ion beam consists primarily of singly ionized carbon ions, and the delay of the start of formation of the anode plasma is 10-15 ns. By reducing the magnetic induction in the A-C gap to a value close to the critical one, the ion beam energy density is 3-6 times higher than that calculated by the one-dimensional Child-Langmuir limit, but the energy density of the ion beam is non-uniform in cross-section. In this mode, the anode plasma formation occurs due to ionization of the anode material with accelerated electrons. In this mode, also, the delay in the start of the formation of the anode plasma is much smaller and the degree of ionization of carbon ions is higher. In all modes occurred effective suppression of the electronic component of the total current, and the diode impedance was 20-30 times higher than the values calculated for the mode without magnetic insulation of the electrons. The divergence of the ion beam was 4.5°-6°.

  16. Investigation of terbium scandate as an alternative gate dielectric in fully depleted transistors

    Science.gov (United States)

    Roeckerath, M.; Lopes, J. M. J.; Özben, E. Durǧun; Urban, C.; Schubert, J.; Mantl, S.; Jia, Y.; Schlom, D. G.

    2010-01-01

    Terbium scandate thin films were deposited by e-gun evaporation on (100) silicon substrates. Rutherford backscattering spectrometry and x-ray diffraction studies revealed homogeneous chemical compositions of the films. A dielectric constant of 26 and CV-curves with small hystereses were measured as well as low leakage current densities of <1 nA/cm2. Fully depleted n-type field-effect transistors on thin silicon-on-insulator substrates with terbium scandate gate dielectrics were fabricated with a gate-last process. The devices show inverse subthreshold slopes of 80 mV/dec and a carrier mobility for electrons of 225 cm2/V•s was extracted.

  17. Numerical investigations into a fiber laser based dielectric reverse dual-grating accelerator

    Energy Technology Data Exchange (ETDEWEB)

    Aimidula, A., E-mail: aimidula.aimierding@liverpool.ac.uk [Cockcroft Institute, Daresbury Sci-Tech, Warrington WA4 4AD (United Kingdom); Physics Department, University of Liverpool, Liverpool (United Kingdom); Welsch, C.P. [Cockcroft Institute, Daresbury Sci-Tech, Warrington WA4 4AD (United Kingdom); Physics Department, University of Liverpool, Liverpool (United Kingdom); Xia, G. [Cockcroft Institute, Daresbury Sci-Tech, Warrington WA4 4AD (United Kingdom); School of Physics and Astronomy, University of Manchester, Manchester (United Kingdom); Koyama, K.; Uesaka, M. [Department of Nuclear Engineering and Management, The University of Tokyo, Tokai 319-1188 (Japan); Yoshida, M. [High Energy Accelerator Research Organization (KEK), Tsukuba, Ibaraki 305-0801 (Japan); Mete, O. [Cockcroft Institute, Daresbury Sci-Tech, Warrington WA4 4AD (United Kingdom); School of Physics and Astronomy, University of Manchester, Manchester (United Kingdom); Matsumura, Y. [Department of Nuclear Engineering and Management, The University of Tokyo, Tokai 319-1188 (Japan)

    2014-03-11

    Dielectric laser accelerators (DLAs) have great potential for applications, since they can generate acceleration gradients in the range of GeV/m and produce attosecond electron bunches. We described a novel reverse dual-grating dielectric accelerator structure made up of Silicon which is expected to improve beam confinement, and make fabrication easier. Numerical simulation results show that this structure effectively manipulates the laser field and generates a standing wave in the vacuum channel with a phase velocity synchronized to relativistic particles travelling through the structure. Optimum pillar height and channel width have been determined. All required laser parameters and initial particle energy have been analytically estimated and a suitable laser as an energy source is proposed. Finally, the effect of fabrication error on the acceleration gradient is discussed.

  18. Investigating the performance and properties of dielectric elastomer actuators as a potential means to actuate origami structures

    Science.gov (United States)

    Ahmed, S.; Ounaies, Z.; Frecker, M.

    2014-09-01

    Origami engineering aims to combine origami principles with advanced materials to yield active origami shapes, which fold and unfold in response to external stimuli. This paper explores the potential and limitations of dielectric elastomers (DEs) as the enabling material in active origami engineering. DEs are compliant materials in which the coupled electro-mechanical actuation takes advantage of their low modulus and high breakdown strength. Until recently, prestraining of relatively thick DE materials was necessary in order to achieve the high electric fields needed to trigger electrostatic actuation without inducing a dielectric breakdown. Although prestrain improves the breakdown strength of the DE films and reduces the voltage required for actuation, the need for a solid frame to retain the prestrain state is a limitation for the practical implementation of DEs, especially for active origami structures. However, the recent availability of thinner DE materials (50 μm, 130 μm, 260 μm) has made DEs a likely medium for active origami. In this work, the folding and unfolding of DE multilayered structures, along with the realization of origami-inspired 3D shapes, are explored. In addition, an exhaustive study on the fundamentals of DE actuation is done by directly investigating the thickness actuation mechanism and comparing their performance using different electrode types. Finally, changes in dielectric permittivity as a function of strain, electrode type and applied electric field are assessed and analyzed. These fundamental studies are key to obtaining more dramatic folding and to realizing active origami structures using DE materials.

  19. Investigations on laser printing of microcapacitors using poly (methyl methacrylate) dielectric thin films for organic electronics applications

    Energy Technology Data Exchange (ETDEWEB)

    Constantinescu, Catalin, E-mail: constantinescu@lp3.univ-mrs.fr; Rapp, Ludovic, E-mail: rapp@lp3.univ-mrs.fr; Delaporte, Philippe; Alloncle, Anne-Patricia, E-mail: alloncle@lp3.univ-mrs.fr

    2016-06-30

    Graphical abstract: - Highlights: • Laser-induced transfer is used for the printing of multilayered microcapacitors. • The dielectric film is made of PMMA, and the electrodes are made of Ag. • We discuss on the properties of the polymer vs. the LIFT printing. • The structure and electrical properties of the capacitors are emphasized. - Abstract: Thin solid pixels made of Ag/PMMA stacks have been fabricated by laser-induced forward transfer (LIFT), to be tested as thin film microcapacitors in organic electronics applications. The square-shaped laser-printed pixels have a lateral size of ∼350 μm, and the thickness of the dielectric film was varied between 100 and 1500 nm. The pixels were deposited on electrode structures made by LIFT printing of silver nanoparticles ink and paste. Optimal printing conditions led to the fabrication of microcapacitors with typical capacitance in the pF range, tuned by changing the properties of the multilayered structure (e.g. pixel size and/or thickness of the dielectric). Their stability was also investigated over time. We discuss on the morphological and electrical properties of such laser-printed structures, with respect to the impact resistance of the polymer and its suitability for the LIFT process.

  20. Investigation on the viscoelastic behaviors of a circular dielectric elastomer membrane undergoing large deformation

    Directory of Open Access Journals (Sweden)

    Bing Wang

    2016-12-01

    Full Text Available To explore the time-dependent dissipative behaviors of a circular dielectric elastomer membrane subject to force and voltage, a viscoelastic model is formulated based on the nonlinear theory for dissipative dielectrics. The circular membrane is attached centrally to a light rigid disk and then connected to a fixed rigid ring. When subject to force and voltage, the membrane deforms into an out-of plane shape, undergoing large deformation. The governing equations to describe the large deformation are derived by using energy variational principle while the viscoelasticity of the membrane is describe by a two-unit spring-dashpot model. The evolutions of the considered variables and the deformed shape are illustrated graphically. In calculation, the effects of the voltage and the pre-stretch on the electromechanical behaviors of the membrane are examined and the results show that they significantly influence the electromechanical behaviors of the membrane. It is expected that the present model may provide some guidelines in the design and application of such dielectric elastomer transducers.

  1. Structure-property investigations with dielectric study on phosphorylcholine-based polyurethane.

    Science.gov (United States)

    Zhang, Qi; Zhu, Dan; Su, Fu; Xie, Yun; Ma, Zhenmao; Shen, Jian

    2012-07-01

    Polyurethane with zwitterionic phosphorylcholine on the main chain was synthesized and the structures were defined with FTIR and (1)HNMR. The mechanical (tensile strength, elastic modulus) and biological (platelet adhesion) evaluations of its blend films with polyurethane were of satisfactory results, which were in accordance with the requirements of the medical devices, showing their potential applications as anticoagulant biomaterials. The dielectric spectroscopy was recorded with solid films and with films in water. The dielectric dispersion of the solid films demonstrated the existence of condensed ionic structures, which lead to the rigidity enhancement of the soft segment of the phosphorylcholine-based polyurethane, so that its elastic modulus increased. The dielectric measurement with films in water, providing a measurement for the surface properties in the aqueous environment, offered a semiquantitative description of the interface dynamics of the material with a double-layer model, based on which a new hypothesis on the mechanism of blood or bio-compatibility was proposed that the hydrated surface of the satisfactory biomaterials can response to the outside electromagnetic stimuli with slight strength and prompt relaxation. Copyright © 2012 Wiley Periodicals, Inc.

  2. Experimental investigation of Lissajous figure shapes in planar and surface dielectric barrier discharges

    Science.gov (United States)

    Biganzoli, I.; Barni, R.; Gurioli, A.; Pertile, R.; Riccardi, C.

    2014-11-01

    Dielectric Barrier Discharges (DBDs) operating in air at atmospheric pressure are widely employed as cold plasma sources for plasma processing and applications, in both volume and surface configurations. Surface dielectric barrier discharges, however, are mainly known for the manipulation of the boundary layer of an airflow surrounding a body, and thus for aeronautical applications. Lissajous figures, obtained by means of a high-voltage and a capacitive probes, are usually adopted for both these types of DBDs as a method for measuring the power consumption by the discharge. In this work, we propose to integrate this diagnostic tool with the measurement of current pulses, which are associated to microdischarges that usually develop in these plasmas because of the presence of the dielectric barrier. We have studied both planar and surface DBDs in presence of a continuous sinusoidal voltage feeding, and we have demonstrated that this method is promising in order to gain additional information about the discharge characteristics from the shape of the Lissajous figures.

  3. Investigation on the viscoelastic behaviors of a circular dielectric elastomer membrane undergoing large deformation

    Science.gov (United States)

    Wang, Bing; Wang, Zhengang; He, Tianhu

    2016-12-01

    To explore the time-dependent dissipative behaviors of a circular dielectric elastomer membrane subject to force and voltage, a viscoelastic model is formulated based on the nonlinear theory for dissipative dielectrics. The circular membrane is attached centrally to a light rigid disk and then connected to a fixed rigid ring. When subject to force and voltage, the membrane deforms into an out-of plane shape, undergoing large deformation. The governing equations to describe the large deformation are derived by using energy variational principle while the viscoelasticity of the membrane is describe by a two-unit spring-dashpot model. The evolutions of the considered variables and the deformed shape are illustrated graphically. In calculation, the effects of the voltage and the pre-stretch on the electromechanical behaviors of the membrane are examined and the results show that they significantly influence the electromechanical behaviors of the membrane. It is expected that the present model may provide some guidelines in the design and application of such dielectric elastomer transducers.

  4. Investigation of slurry systems in metal and dielectric chemical mechanical polishing

    Science.gov (United States)

    Lu, Zhenyu

    The properties of slurries play a significant role in chemical mechanical polishing (CMP) of metal and dielectric films in semiconductor device manufacturing. This study investigates the effects of the size, shape, and hardness of uniform abrasive particles of simple and composite natures on the polishing of copper, tantalum, and thermal oxide films in the presence of different chemical reagents. It was shown that the total surface area of the solids in the slurry controlled the material removal rate by pure silica for both Cu and Ta, while the surface quality of the polished films was better when using higher silica contents. Ceria particles are the choice abrasives in polishing of oxide surfaces. Since it is difficult to prepare in quantities uniform ceria particles of various shapes, the latter were prepared by using monodispersed cubic and ellipsoidal hematite (Fe2O3) particles and spherical silica, and coating them with nanosized ceria. The polishing data were then obtained using slurries of all these particles and the results were compared with slurries containing only nanosized ceria. At the same pH and the same solid content, the removal rates of these slurries followed the contact area model. Furthermore, slurries containing mixtures of particles performed more efficiently than those of individual particles. Interactions of abrasive particles with surface films to be polished are also very important in CMP. In this study, the packed column technique was employed to investigate the physical and chemical reactions at the particle/film interfaces under conditions that simulate CMP processes. Well-defined dispersions of uniform particles, including spherical silica, calcined alumina, and silica cores coated with nanosized ceria particles were used to evaluate particle adhesion on copper and glass beads. It was shown that pH and the slurry flow rate had significant effects on particle deposition and detachment. The attachment results of silica particles on

  5. Integration of low-k organic flowable SOG in a non-etchback/CMP process

    Science.gov (United States)

    Chou, George; Chen, Amanda S.; Hsieh, W. Y.

    1997-09-01

    As devices continuously shrink to deep sub-half micron, the requirements of multilevel interconnect technology become more stringent. A series of device experiments presented here evaluate the integration issues and electrical performance of both logic and SRAM chips fabricated using a low k spin-on material by a non-etchback process. Non-etchback processing is known for it's advantage of reduced cycle time and associated cost saving. Allied Signal's Accuspin 218, a flowable methylsilsesquioxane known for its stable dielectric constant of 2.7, is used throughout the study. Subsequent to SOG coating, several process modifications are implemented to enhance film uniformity and to reduce risks associated with via poisoning. These modifications include a non-conventional two-step baking sequence to enhance film uniformity and a vacuum cure in conjunction with an arsenic implant step to improve via resistance. CMP of the oxide deposited on top of SOG layer is used to provide the required global planarization. CVD tungsten plug process is chosen to test the SOG layer's ability to retain its low dielectric constant after exposure to high temperatures. To insure that photoresist and any polymeric residues are completely removed from the vias, device wafers are subjected to wet stripping and double oxygen plasma ashing. Electrical tests of 0.5 micrometers to 0.35 micrometers vias treated in this manner show that no via poisoning occurs anywhere in the devices. Reliability data from testing of 0.4 micrometers SRAMs is also satisfactory. These results suggest that this low k organic SOG non-etchback process, combined with CMP, is a viable IMD solution for 0.35 micrometers devices.

  6. Fractal characteristics investigation on electromagnetic scattering from 2-D Weierstrass fractal dielectric rough surface

    Institute of Scientific and Technical Information of China (English)

    Ren Xin-Cheng; Guo Li-Xin

    2008-01-01

    A normalized two-dimensional band-limited Weierstrass fractal function is used for modelling the dielectric rough surface. An analytic solution of the scattered field is derived based on the Kirchhoff approximation. The variance of scat-tering intensity is presented to study the fractal characteristics through theoretical analysis and numerical calculations. The important conclusion is obtained that the diffracted envelope slopes of scattering pattern can be approximated as a slope of linear equation. This conclusion will be applicable for solving the inverse problem of reconstructing rough surface and remote sensing.

  7. Lithographic performance of a new "low-k" mask

    Science.gov (United States)

    Adachi, Takashi; Tani, Ayako; Fujimura, Yukihiro; Hayano, Katsuya; Morikawa, Yasutaka; Miyashita, Hiroyuki; Inazuki, Yukio; Kawai, Yoshio

    2016-05-01

    We have been researching new mask blank materials for the next generation lithography (NGL) and developed a new mask blank with low-k phase shifter [1] [2]. The low-k phase shifter consists of only Si and N. In our previous work, we reported the advantages of developed SiN phase shift mask (PSM) [2]. It showed high lithographic performance and high durability against ArF excimer laser as well as against cleaning. In this report, we further verified its high lithographic performance on several types of device pattern. The SiN PSM had high lithographic performance compared with conventional 6% MoSi PSM. Exposure latitude (EL) and mask enhancement factor (MEEF) were especially improved on originally designed Gate, Metal and Via patterns.

  8. Investigation of the crystal structure, dielectrical, electrical and microstructural properties of cobalt-containing calcium orthophosphates

    Directory of Open Access Journals (Sweden)

    Omer Kaygili

    2015-06-01

    Full Text Available Pure hydroxyapatite and cobalt-containing calcium orthophosphate ceramics were synthesized by the sol–gel method and their properties were analyzed by Fourier transform infrared spectroscopy, X–ray diffraction, dielectrical impedance spectroscopy and scanning electron microscopy techniques. The average crystallite size of the samples was found to be 30–56 nm. The crystallinity was decreased gradually with the addition of Co. The resistance values were found to be ~1012 Ω. Dielectric permittivity and alternating current conductivity of all the samples showed substantial changes in the presence of cobalt. The morphology and particle size distribution of all the samples were changed with increasing amount of Co. In addition, the high content of Co ions was found to both destroy the apatitic structure of the hydroxyapatite and cause the calcium deficiency. The results indicated that, in presence of high amounts of Co, Ca9.5Co(PO47 ceramics could be prepared. Normal 0 21 false false false MicrosoftInternetExplorer4 DOI: http://dx.doi.org/10.5755/j01.ms.21.2.6251

  9. 0.18μm Low-k SiOF Integration and Reliability

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    The requirement of reduced RC delay and cross-talk for multilevel interconnect ULSI applications has enthusiastically driven process development for seeking suitable low dielectric constant materials with sufficient k value. The replacement of HDP FSG(k-3.5-3.6) with conventional SiO2 as a manufacturable intermetal dielectric layer (IMD) has achieved 0.18μm ULSI interconnect technology. The electrical test result, via resislance as well as multilevel CMOS transistor characteristics (such as plasma damage, device degradation, hot carrier, etc.) are basically compatible to those conventional oxide as IMD. Assessment of metal line-to-line capacitance reduction using comb capacitors yields values of reduction range 10%-14% comparing FSG to convention oxide. The effectiveness of low-k FSG in circuit performance is also demonstrated. Comparisons of ring-oscillator speed performance for metal runners with various width and space show speed improvement approximately 10% for the FSG. Impact of FSG on reliability is evaluated and results show manufacturing compatibility to conventional SiO2.

  10. C2F6/O2/Ar Plasma Chemistry of 60 MHz/2 MHz Dual-Frequency Discharge and Its Effect on Etching of SiCOH Low-k Films%C2F6/O2/Ar Plasma Chemistry of 60 MHz/2 MHz Dual-Frequency Discharge and Its Effect on Etching of SiCOH Low-k Films

    Institute of Scientific and Technical Information of China (English)

    袁颖; 叶超; 陈天; 葛水兵; 刘卉敏; 崔进; 徐轶君; 邓艳红; 宁兆元

    2012-01-01

    This work investigated C2F6/O2/Ar plasma chemistry and its effect on the etching characteristics of SiCOH low-k dielectrics in 60 MHz/2 MHz dual-frequency capacitively coupled discharge. For the C2F6/Ar plasma, the increase in the low-frequency (LF) power led to an increased ion impact, prompting the dissociation of C2F6 with higher reaction energy. As a result, fluorocarbon radicals with a high F/C ratio decreased. The increase in the discharge pressure led to a decrease in the electron temperature, resulting in the decrease of C2F6 dissociation. For the C2F6/O2/Ar plasma, the increase in the LF power prompted the reaction between 02 and C2F6, resulting in the elimination of CF3 and CF2 radicals, and the production of an F-rich plasma environment. The F-rich plasma improved the etching characteristics of SiCOH low-k films, leading to a high etching rate and a smooth etched surface.

  11. Experimental investigation on electromechanical deformation of dielectric elastomers under different temperatures

    Directory of Open Access Journals (Sweden)

    Lei Liu

    2015-07-01

    Full Text Available Under an applied voltage, dielectric elastomers (DEs produce an actuation strain that is nonlinear, partly because of the material properties. In this study, an experimental characterization is conducted to evaluate how the ambient temperature and pre-stretch affected the actuation performance. For DEs with a pre-stretch of 2×2, an increase of temperature from −10°to 80°results in a variation in the actuation strain of more than 1700%. Low pre-stretched DEs are more susceptible to temperature change; while highly pre-stretched DEs are relatively insensitive to temperature, because in this case the energy conversion was dominated by mechanical stretching, rather than thermal conduction, during the actuation.

  12. Magnetic and Dielectric Investigations of Mn-Doped Ba Hexaferrite Nanoparticles by Hydrothermal Approach

    Science.gov (United States)

    Adeela, N.; Khan, U.; Iqbal, M.; Riaz, S.; Ali, H.; Maaz, K.; Naseem, S.

    2016-11-01

    A hydrothermal method followed by heat treatment was used to synthesize Mn-substituted Ba2Co2- x Mn x Fe12O22 nanoparticles with a nominal chemical composition of 0 ≤ x magnetic measurements. It was found that the sample at x = 0.9 is of particular interest due to its large coercivity and anisotropy. Later on, for x = 0.9, temperature-dependent magnetic analyses including hysteresis loops, zero-field-cooled, and field-cooled at a particular field of 100 Oe were performed. The decreasing trend in saturation magnetization with increase in temperature was estimated. On the other hand, first an increase and then decrease in coercivity values were observed. These loops also revealed dependence of coercivity on magneto-crystalline anisotropy and average crystallite size of nanoparticles. Dielectric measurements at x = 0.9 make it suitable for high frequency applications.

  13. EVALUATION OF DIELECTRIC CURING MONITORING INVESTIGATING LIGHT-CURING DENTAL FILLING COMPOSITES

    Directory of Open Access Journals (Sweden)

    Johannes Steinhaus

    2011-05-01

    Full Text Available The aim of this study is the evaluation of a dielectric analysis (DEA method monitoring the curing behaviour of a light curing dental filling material in real-time. The evaluation is to extract the influence of light intensity on the photo-curing process of dental composite filling materials. The intensity change is obtained by measuring the curing process at different sample depth. It could be shown that increasing sample thickness, and therefore exponentially decreasing light intensity, causes a proportional decrease in the initial curing rate. Nevertheless, the results give rise to the assumption that lower illumination intensities over a long period cause higher overall conversion, and thus better mechanical properties. This would allow for predictions of the impact of different curing-rates on the final mechanical properties.

  14. The Investigation on the Potential of Coconut Shell Powder Composite in Term of Carbon Composition, Surface Porosity and Dielectric Properties as a Microwave Absorbing Material

    Directory of Open Access Journals (Sweden)

    Yew Been Seok

    2016-01-01

    Full Text Available Agricultural wastes are renewable resources that are potentially useful as microwave absorbing materials. This paper presents the investigation on the carbon composition, surface porosity of the raw coconut shell powder particles and the dielectric properties of coconut shell powder with epoxy resin matrix composites. From CHNS elemental analysis, it was found that the carbon composition of coconut shell powder is 46.700%. Presences of macropores (≈ 2μm were detected in the SEM analysis of the coconut shell powder particles. Measurement on dielectric properties of the coconut shell powder composites was performed by using open-ended coaxial probe method over microwave frequency range of 1-8 GHz. The overall dielectric constant (εr’ and dielectric loss factor (εr” of the composite with ratio 50:50 were 3.56 and 0.26, ranging from 3.35-3.76 and 0.21-0.30 respectively; whereas for composite ratio 40:60, the overall dielectric constant (εr’ and dielectric loss factor (εr” were 2.97 and 0.21, ranging from 2.74-3.17 and 0.16-0.27 respectively. The electrical conductivity calculated based on measured εr” was 0.067 and 0.054 for composite ratio 50:50 and 40:60 respectively. The dielectric properties and electrical conductivity of the coconut shell powder composites were influenced by the greater presence of high dielectric material (coconut shell powder. This experimental investigation on the potential of the coconut shell powder with epoxy resin composites indicates that the ability of the composite to absorb and convert microwave signals is dependent on the carbonaceous materials of the composite. This result offers a great opportunity to diversify the use of coconut shell powder as microwave absorbing material.

  15. Investigation of structural, dielectric, magnetic and antibacterial activity of Cu–Cd–Ni–FeO{sub 4} nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Hashim, Mohd., E-mail: md.hashim09@gmail.com [Department of Applied Physics, Aligarh Muslim University, Aligarh 202 002 (India); Alimuddin [Department of Applied Physics, Aligarh Muslim University, Aligarh 202 002 (India); Shirsath, Sagar E. [Spin Device Technology Centre, Department of Information Engineering, Shinshu University, Nagano 380-8553 (Japan); Meena, S.S. [Solid State Physics Division, Bhabha Atomic Research Centre, Mumbai 400 085 (India); Kotnala, R.K. [National Physical Laboratory (CSIR), Dr. K.S. Krishnan Road, New Delhi 110012 (India); Parveen, Ameena [Department of Physics, Government First Grade College, Gurmitkal 585214, Yadgir, Karnataka (India); Roy, Aashis S. [Department of Materials Science, Gulbarga University, Gulbarga - 585106, Karnataka (India); Kumar, Shalendra [Department of Physics, Pohang University of Science and Technology, Pohang 790-784 (Korea, Republic of); Bhatt, Pramod [Solid State Physics Division, Bhabha Atomic Research Centre, Mumbai 400 085 (India); Kumar, Ravi [Centre for Material Science and Engineering, National Institute of Technology, Hamirpur 171 005, HP (India)

    2013-09-15

    Nanoparticles of Cu–Cd–Ni–FeO{sub 4} were synthesized by the auto-combustion process using a modified citric acid method. Antibacterial activity, structural, dielectric and magnetic properties were investigated. An assay showed the broad spectrum antibacterial activity of Cu–Cd–Ni–FeO{sub 4} against Gram positive and Gram negative pathogenic bacterial strains. The existence of single phase cubic spinel structure of ferrites was confirmed by X-ray diffraction measurement. Fourier transform infrared spectroscopy shows the two main absorption bands at lower frequency region. Surface morphology and compositional features were studied by scanning electron microscopy and energy dispersive X-ray spectroscopy analysis, respectively. Results indicated that the nanosize particles greatly influenced the antibacterial activity, as well as structural, dielectric and magnetic properties of the samples. Magnetic measurements of the samples were carried out by means of vibrating sample magnetometry and Mössbauer spectroscopy. Magnetic properties are strongly affected by Ni{sup 2+} substitution. - Highlights: • Ni{sup 2+} substituted Cu–Cd–FeO NPs. • Rietveld refinement and IR study confirm the Cu–Cd–FeO in spinel phase. • Magnetization increased with Ni{sup 2+} substitution. • Magnetic parameters by Mössbauer measurements. • Antibacterial activities of Cu–Cd–Ni–FeO NPs.

  16. Dielectric spectroscopy investigation of ion-containing and intermolecular hydrogen-bonded polymer systems

    Science.gov (United States)

    Atorngitjawat, Pornpen

    Ion-containing and intermolecular hydrogen-bonded polymers are used widely in a variety of industrial and commercial applications, from food packaging to battery electrolytes to pharmaceuticals. Yet the dynamics of these polymers, which are both complex and important to the application, are poorly understood. This thesis provides the first systematic study of the dynamics of several ion-containing and intermolecular hydrogen-bonded polymers by broadband dielectric relaxation spectroscopy. The systems under consideration include sulfonated polystyrene (SPS) in acid (SPS-H) and neutralized forms, and mixtures of poly(2-vinylpyridine) (P2VPy) with lithium perchlorate (LiClO4) and low molecular weight phenolic molecules. Dynamic mechanical analysis, Fourier transform infrared spectroscopy, differential scanning calorimetry, small-angle X-ray scattering and wide-angle X-ray diffraction were employed in a complementary role. Multiple relaxations were generally observed at high temperatures. For SPS ionomers, the segmental process, Maxwell-Wagner-Sillars interfacial polarization, and electrode polarization were detected. Three relaxations were also found in spectra of SPS-H, attributed to the segmental process, hydrogen bond association/dissociation, and electrode polarization. Three dielectric relaxations above the segmental process were observed for P2VPy-LiClO4 mixtures: ion-mode relaxation, slow hindered segmental relaxation and electrode polarization. However, only electrode polarization was observed above the segmental relaxation for all P2VPy--small phenolic molecule mixtures, except P2VPy + 10 mol% 2,3,3,4,4,5-hexahydroxybenzophenone. This mixture exhibited an additional relaxation due to Maxwell-Wagner-Sillars interfacial polarization, arising from the existence of phase-separated complexes within the P2VPy matrix. Sub-Tg local relaxations were suppressed by ionic intermolecular interactions for SPS ionomers and P2VPy-LiClO4 mixtures. Intermolecular hydrogen

  17. Performance investigations of novel dual-material gate(DMG) MOSFET with dielectric pockets(DP)

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    Dual-material gate MOSFET with dielectric pockets (DMGDP MOSFET) is proposed to eliminate the potential weakness of the DP MOSFET for CMOS scaling toward the 32 nm gate length and beyond. The short-channel effects (SCE) can be effectively suppressed by the insulator near the source/drain regions. And the suppression capability can be even better than the DP MOSFET due to the drain bias absorbed by the screen gate. The speed performance and electronic characteristics of the DMGDP MOSFET are comprehensively studied. Compared to the experimental data from Jurczak et al., the DMGDP PMOSFET exhibits good subthreshold characteristics and the on-state current is almost the twice that of the DP PMOSFET. The intrinsic delay of the NMOS reaches 21% greater than the DP MOSFET for 32 nm node. The higher fT of 390 GHz is achieved, which is a 32% enhancement in comparison with the DP MOSFET when the gate length is 50 nm. Finally, the design guideline and the optimal regions of the DMGDP MOSFET are discussed.

  18. Performance investigations of novel dual-material gate (DMG)MOSFET with dielectric pockets(DP)

    Institute of Scientific and Technical Information of China (English)

    LUAN SuZhen; LIU HongXia; JIA RenXu

    2009-01-01

    Dual-material gate MOSFET with dielectric pockets(DMGDP MOSFET)is proposed to eliminate the potential weakness of the DP MOSFET for CMOS scaling toward the 32 nm gate length and beyond.The short-channel effects(SCE)can be effectively suppressed by the insulator near the source/drain regions.And the suppression capability can be even better than the DP MOSFET due to the drain bias absorbed by the screen gate.The speed performance and electronic characteristics of the DMGDP MOSFET are comprehensively studied.Compared to the experimental data from Jurczak et al.,the DMGDP PMOSFET exhibits good subthreshold characteristics and the on-state current is almost the twice that of the DP PMOSFET.The intrinsic delay of the NMOS reaches 21% greater than the DP MOSFET for 32 nm node.The higher fT of 390 GHz is achieved,which is a 32% enhancement in comparison with the DP MOSFET when the gate length is 50 nm.Finally,the design guideline and the opUmal regions of the DMGDP MOSFET are discussed.

  19. Investigations on structural, vibrational and dielectric properties of nanosized Cu doped Mg-Zn ferrites

    Science.gov (United States)

    Yadav, Anand; Rajpoot, Rambabu; Dar, M. A.; Varshney, Dinesh

    2016-05-01

    Transition metal Cu2+ doped Mg-Zn ferrite [Mg0.5Zn0.5-xCuxFe2O4 (0.0 ≤ x ≤ 0.5)] were prepared by sol gel auto combustion (SGAC) method to probe the structural, vibrational and electrical properties. X-ray diffraction (XRD) pattern reveals a single-phase cubic spinel structure without the presence of any secondary phase corresponding to other structure. The average particle size of the parent Mg0.5Zn0.5Fe2O4 is found to be ~29.8 nm and is found to increase with Cu2+ doping. Progressive reduction in lattice parameter of Mg0.5Zn0.5Fe2O4 has been observed due to difference in ionic radii of cations with improved Cu doping. Spinel cubic structure is further confirmed by Raman spectroscopy. Small shift in Raman modes towards higher wave number has been observed in doped Mg-Zn ferrites. The permittivity and dielectric loss decreases at lower doping and increases at higher order doping of Cu2+.

  20. Polymer chain dynamics in epoxy based composites as investigated by broadband dielectric spectroscopy

    Directory of Open Access Journals (Sweden)

    Mohammad K. Hassan

    2016-03-01

    Full Text Available Epoxy networks of the diglycidyl ether of bisphenol A (DGEBA were prepared using 3,3′- and 4,4′-diaminodiphenyl sulfone isomer crosslinkers. Secondary relaxations and the glass transitions of resultant networks were probed using broadband dielectric spectroscopy (BDS. A sub-Tg γ relaxation peak for both networks shifts to higher frequencies (f with increasing temperature in Arrhenius fashion, both processes having the same activation energy and being assigned to phenyl ring flipping in DGEBA chains. A β relaxation is assigned to local motions of dipoles that were created during crosslinking reactions. 4,4′-based networks exhibited higher Tg relative to 3,3′-based networks as per dynamic mechanical as well as BDS analyses. The Vogel–Fulcher–Tammann–Hesse equation fitted well to relaxation time vs. temperature data and comparison of Vogel temperatures suggests lower free volume per mass for the 3,3′-based network. The Kramers–Krönig transformation was used to directly calculate dc-free ɛ″ vs. f data from experimental ɛ′ vs. f data. Distribution of relaxation times (DRT curves are bi-modal for the 3,3′-crosslinked resin suggesting large-scale microstructural heterogeneity as opposed to homogeneity for the 4,4′-based network whose DRT consists of a single peak.

  1. Temperature dependence of the dielectric constant of acrylic dielectric elastomer

    Energy Technology Data Exchange (ETDEWEB)

    Sheng, Junjie; Chen, Hualing; Li, Bo; Chang, Longfei [Xi' an Jiaotong University, State Key Laboratory for Strength and Vibration of Mechanical Structures, Xi' an (China); Xi' an Jiaotong University, School of Mechanical Engineering, Xi' an (China)

    2013-02-15

    The dielectric constant is an essential electrical parameter to the achievable voltage-induced deformation of the dielectric elastomer. This paper primarily focuses on the temperature dependence of the dielectric constant (within the range of 173 K to 373 K) for the most widely used acrylic dielectric elastomer (VHB 4910). First the dielectric constant was investigated experimentally with the broadband dielectric spectrometer (BDS). Results showed that the dielectric constant first increased with temperature up to a peak value and then dropped to a relative small value. Then by analyzing the fitted curves, the Cole-Cole dispersion equation was found better to characterize the rising process before the peak values than the Debye dispersion equation, while the decrease process afterward can be well described by the simple Debye model. Finally, a mathematical model of dielectric constant of VHB 4910 was obtained from the fitted results which can be used to further probe the electromechanical stability of the dielectric elastomers. (orig.)

  2. Atomic layer deposition of TiO2 on surface modified nanoporous low-k films.

    Science.gov (United States)

    Levrau, Elisabeth; Devloo-Casier, Kilian; Dendooven, Jolien; Ludwig, Karl F; Verdonck, Patrick; Meersschaut, Johan; Baklanov, Mikhail R; Detavernier, Christophe

    2013-10-01

    This paper explores the effects of different plasma treatments on low dielectric constant (low-k) materials and the consequences for the growth behavior of atomic layer deposition (ALD) on these modified substrates. An O2 and a He/H2 plasma treatment were performed on SiCOH low-k films to modify their chemical surface groups. Transmission FTIR and water contact angle (WCA) analysis showed that the O2 plasma changed the hydrophobic surface completely into a hydrophilic surface, while the He/H2 plasma changed it only partially. In a next step, in situ X-ray fluorescence (XRF), ellipsometric porosimetry (EP), and Rutherford backscattering spectroscopy (RBS) were used to characterize ALD growth of TiO2 on these substrates. The initial growth of TiO2 was found to be inhibited in the original low-k film containing only Si-CH3 surface groups, while immediate growth was observed in the hydrophilic O2 plasma treated film. The latter film was uniformly filled with TiO2 after 8 ALD cycles, while pore filling was delayed to 17 ALD cycles in the hydrophobic film. For the He/H2 plasma treated film, containing both Si-OH and Si-CH3 groups, the in situ XRF data showed that TiO2 could no longer be deposited in the He/H2 plasma treated film after 8 ALD cycles, while EP measurements revealed a remaining porosity. This can be explained by the faster deposition of TiO2 in the hydrophilic top part of the film than in the hydrophobic bulk which leaves the bulk porous, as confirmed by RBS depth profiling. The outcome of this research is not only of interest for the development of advanced interconnects in ULSI technology, but also demonstrates that ALD combined with RBS analysis is a handy approach to analyze the modifications induced by a plasma treatment on a nanoporous thin film.

  3. Investigation of the effects of a thin dielectric layer on low-pressure hydrogen capacitive discharges driven by combined radio frequency and pulse power sources

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Jizhong; Fan, Yu; Zou, Ying; Wang, Dezhen [Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Stirner, Thomas [Department of Electronic Engineering, University of Applied Sciences Deggendorf, Edlmairstr. 6-8, D-94469 Deggendorf (Germany)

    2013-11-15

    Negative hydrogen ion sources, for instance for fusion devices, currently attract considerable attention. To generate the precursors—highly rovibrationally excited hydrogen molecules—for negative hydrogen ions effectively by electron excitation, a thin dielectric layer is introduced to cover the surface of the electrically grounded electrode of two parallel metal plates in a low-pressure hydrogen capacitive discharge driven by combined rf and pulse power sources. To understand the characteristics of such discharges, particle-in-cell simulations are conducted to study the effects that the single dielectric layer would bring onto the discharges. The simulation results show that the dielectric layer leads to a much higher plasma density and a much larger production rate of highly vibrationally excited hydrogen molecules compared to discharges without the dielectric layer on the electrode. Further investigation indicates that the nonlinear oscillation of the electrons induced by the nanosecond-pulse continues until it is finally damped down and does not show any dependence on the pulse plateau-time, which is in stark contrast to the case without the dielectric layer present. The physical reason for this phenomenon is explored and explained.

  4. Experimental and theoretical investigation of the effect of SiO2 content in gate dielectrics on work function shift induced by nanoscale capping layers

    KAUST Repository

    Caraveo-Frescas, J. A.

    2012-09-10

    The impact of SiO2 content in ultrathin gate dielectrics on the magnitude of the effective work function (EWF) shift induced by nanoscale capping layers has been investigated experimentally and theoretically. The magnitude of the effective work function shift for four different capping layers (AlN, Al2O3, La2O3, and Gd2O3) is measured as a function of SiO2 content in the gate dielectric. A nearly linear increase of this shift with SiO2 content is observed for all capping layers. The origin of this dependence is explained using density functional theory simulations.

  5. Experimental study on the dielectric properties of polyacrylate dielectric elastomer

    Science.gov (United States)

    Qiang, Junhua; Chen, Hualing; Li, Bo

    2012-02-01

    The dielectric constant of elastomeric dielectric material is an essential physical parameter, whose value may affect the electromechanical deformation of a dielectric elastomer actuator. Since the dielectric constant is influenced by several external factors as reported before, and no certain value has been confirmed to our knowledge, in the present paper, on the basis of systematical comparison of recent past literature, we conducted extensive works on the measurement of dielectric properties of VHB films, involving five influencing factors: prestretch (both equal and unequal biaxial), electrical frequency, electrode material, stress relaxation time and temperature. Experimental results directly show that the dielectric response changes according to these factors, based on which we investigate the significance of each factor, especially the interaction of two external conditions on the dielectric constant of deformable dielectric, by presenting a physical picture of the mechanism of polarization.

  6. Experimental Investigation of Flow Separation Control Using Dielectric Barrier Discharge Plasma Actuators

    Institute of Scientific and Technical Information of China (English)

    LI Gang; NIE Chaoqun; LI Yiming; ZHU Junqiang; XU Yanji

    2008-01-01

    Influence of plasma actuators as a flow separation control device was investigated experimentally.Hump model was used to demonstrate the effect of plasma actuators on external flow separation,while for internal flow separation a set of compressor cascade was adopted.In order to investigate the modification of the flow structure by the plasma actuator,the flow field was examined non-intrusively by particle image velocimetry measurements in the hump model experiment and by a hot film probe in the compressor cascade experiment.The results showed that the plasma actuator could be effective in controlling the flow separation both over the hump and in the compressor cascade when the incoming velocity was low.As the incoming velocity increased,the plasma actuator was less effective. It is urgent to enhance the intensity of the plasma actuator for its better application.Methods to increase the intensity of plasma actuator were also studied.

  7. Theoretical investigation of fabrication-related disorders on the properties of subwavelength metal-dielectric-metal plasmonic waveguides.

    Science.gov (United States)

    Min, Changjun; Veronis, Georgios

    2010-09-27

    We theoretically investigate the effect of fabrication-related disorders on subwavelength metal-dielectric-metal plasmonic waveguides. We use a Monte Carlo method to calculate the roughness-induced excess attenuation coefficient with respect to a smooth waveguide. For small roughness height, the excess optical power loss due to disorder is small compared to the material loss in a smooth waveguide. However, for large roughness height, the excess attenuation increases rapidly with height and the propagation length of the optical mode is severely affected. We find that the excess attenuation is mainly due to reflection from the rough surfaces. However, for small roughness correlation lengths, enhanced absorption is the dominant loss mechanism due to disorder. We also find that the disorder attenuation due to reflection is approximately maximized when the power spectral density of the disordered surfaces at the Bragg spatial frequency is maximized. Finally, we show that increasing the modal confinement or decreasing the guide wavelength, increase the attenuation due to disorder.

  8. Dielectric and Mechanical Investigations on the Hydrophilicity and Hydrophobicity of Polyethylene Oxide Modified on a Silicon Surface.

    Science.gov (United States)

    Shang, Jing; Hong, Kunlun; Wang, Tao; Zhu, Dan; Shen, Jian

    2016-11-08

    Polyethylene oxide (PEO) has been widely used in biomedical fields. The antibiofouling property of the PEO-modified surface has been extensively investigated but is far from being fully understood. A series of PEOs with narrowly distributed molecular weight (Mw), synthesized with the technique of high vacuum anionic polymerization, have been successfully grafted onto the surface of silicon wafers. The power-law relationship between the thickness of the monolayer versus the Mw of the grafted PEO shows a scaling of 0.3, indicating compact condensing of the chains. The static contact angles show higher hydrophobicity for the layer of PEO with higher Mw, which can be attributed to the closely packed conformation of the chains with high density. The frequency shift of the contact resonance indicates that the Young's modulus decreases and the loss factor increases with the increase in the Mw of PEO and the thickness of the PEO layers. Dielectric spectroscopy of bare or PEO-grafted wafers in the aqueous solutions reveals an interfacial polarization, which results from compositional and structural changes in the interface layer and depends on temperatures and salt concentrations. At a given grafting density, the PEO chains are swollen in pure water, demonstrating hydrophilic behavior, whereas they collapse in salt solutions, showing hydrophobic characteristics.

  9. Vacuum ultra-violet emission of CF4 and CF3I containing plasmas and Their effect on low-k materials

    Science.gov (United States)

    el Otell, Z.; Šamara, V.; Zotovich, A.; Hansen, T.; de Marneffe, J.-F.; Baklanov, M. R.

    2015-10-01

    CF3I was suggested as a replacement of CF4 gas to decrease the plasma-induced damage (PID) on low-k dielectrics during etching. This proposal is investigated by means of plasma emission measurements and material characterisation. The experiments were conducted in a 300 mm capacitively coupled plasma source. The vacuum ultraviolet (VUV, 30≤slant λ ≤slant 220 nm) plasma emission was measured for discharges generated in a pure or a mixture of argon, CF4 and/or CF3I, since VUV plays a major role in PID. However, CF3I containing discharges were found to have a stronger emission than CF4 in the VUV range. Nevertheless, Fourier transform infra-red spectroscopy and κ-value measurements showed that there is almost no difference between the damage caused by CF3I or CF4 containing plasmas, while etching in a capacitively coupled plasma source. It is proposed that the damage caused by CF3I with lower F*-density but higher VUV-photon flux is similar to the damage caused by CF4, with higher F*-density but lower VUV-photon flux.

  10. Comparative investigation of hydrogen bonding in silicon based PECVD grown dielectrics for optical waveguides

    Science.gov (United States)

    Ay, F.; Aydinli, A.

    2004-06-01

    Silicon oxide, silicon nitride and silicon oxynitride layers were grown by a PECVD technique. The resulting refractive indices of the layers varied between 1.47 and 1.93. The compositional properties of the layers were analyzed by FTIR and ATR infrared spectroscopy techniques. Comparative investigation of bonding structures for the three different layers was performed. Special attention was given to analyze N-H bond stretching absorption at 3300-3400 cm -1. Quantitative results for hydrogen related bonding concentrations are presented based on IR analysis. An annealing study was performed in order to reduce or eliminate this bonding types. For the annealed samples the N-H bond concentration was strongly reduced as verified by FTIR transmittance and ATR spectroscopic methods. A correlation between the N-H concentration and absorption loss was verified for silicon oxynitride slab waveguides. Moreover, a single mode waveguide with silicon oxynitride core layer was fabricated. Its absorption and insertion loss values were determined by butt-coupling method, resulting in low loss waveguides.

  11. Investigation of trapped metallo-dielectric core-shell colloidal particles using soft X-rays

    Energy Technology Data Exchange (ETDEWEB)

    Graf, Christina [Physikalische Chemie, Freie Universitaet Berlin, Takustr. 3, D-14195 Berlin (Germany)], E-mail: cmgraf@chemie.fu-berlin.de; Langer, Burkhard [Physikalische Chemie, Freie Universitaet Berlin, Takustr. 3, D-14195 Berlin (Germany); Grimm, Michael [Institut fuer Physikalische Chemie, Universitaet Wuerzburg, Am Hubland, D-97074 Wuerzburg (Germany); Lewinski, Rene [Physikalische Chemie, Freie Universitaet Berlin, Takustr. 3, D-14195 Berlin (Germany); Grom, Melanie [Institut fuer Physikalische Chemie, Universitaet Wuerzburg, Am Hubland, D-97074 Wuerzburg (Germany); Ruehl, Eckart [Physikalische Chemie, Freie Universitaet Berlin, Takustr. 3, D-14195 Berlin (Germany)], E-mail: ruehl@chemie.fu-berlin.de

    2008-11-15

    The charging mechanisms of free silica nanoparticles coated with a thin (40 nm) gold shell are investigated. These are excited in the soft X-ray regime at different photon energies. The results are compared to the charging behavior of neat silica particles. The absolute charge state of the particles is measured and the electron emission probability is derived. Significant differences in the charging behavior are observed due to the metal layer, especially an increased number of emitted electrons per absorbed photon. The mechanisms of particle charging in these core-shell systems are discussed at different excitation energies, reaching up to 500 eV. They are due to secondary electron emission, the emission of photoelectrons, and the emission of electrons from rough metal surfaces. There are also significant changes in the charging current. Neat silica particles show a distinct near-edge feature in the O 1s-regime (520-580 eV). In contrast, gold-coated particles do not show any evidence for changes in particle charge due to resonant O 1s-absorption. This implies that properties of thin films in core-shell particles can be sensitively probed by single, trapped nanoparticles.

  12. Preliminary investigation of polystyrene/MoS{sub 2}-Oleylamine polymer composite for potential application as low-dielectric material in microelectronics

    Energy Technology Data Exchange (ETDEWEB)

    Landi, Giovanni, E-mail: glandi@unisa.it [Institute for Polymers, Composites and Biomaterials (IPCB-CNR), P. Enrico Fermi 1, 80055 Portici (Italy); Department of Industrial Engineering, University of Salerno, Via G. Paolo II 132, 84084 Fisciano (Italy); Altavilla, Claudia; Iannace, Salvatore; Sorrentino, Andrea, E-mail: andrea.sorrentino@cnr.it [Institute for Polymers, Composites and Biomaterials (IPCB-CNR), P. Enrico Fermi 1, 80055 Portici (Italy); Ciambelli, Paolo [Department of Industrial Engineering, University of Salerno, Via G. Paolo II 132, 84084 Fisciano (Italy); Centre NANO-MATES, University of Salerno, Fisciano, Via G. Paolo II 132, 84084 Fisciano (Italy); Neitzert, Heinrich C. [Department of Industrial Engineering, University of Salerno, Via G. Paolo II 132, 84084 Fisciano (Italy)

    2015-12-17

    Insulating materials play a vital role in the design and performance of electrical systems for both steady and transient state conditions. Among the other properties, also in this field, polymer nanocomposites promise to offer exciting improvements. Many studies in the last decade has witnessed significant developments in the area of nano-dielectric materials and significant effects of nano-scale fillers on electric, thermal and mechanical properties of polymeric materials have been observed. However, the developments of new and advanced materials to be used the miniaturization of electronic devices fabrication require extensive studies on electrical insulation characteristics of these materials before they can be used in commercial systems. In this work, Polystyrene (PS) composites were prepared by the blend solution method using MoS{sub 2}@Oleylamine nanosheets as filler. The dielectric properties of the resulting comoposite have been investigated at 300K and in the frequency range between 1000 Hz and 1 MHz. The addition of the MoS{sub 2}@Oleylamine nanosheets leads to a decreasing of the relative dielectric constant and of the electrical conductivity measured in the voltage range between ±500V. Thanks to a possibility to tune the electrical permittivity with the control of MoS{sub 2} concentration, these materials could be used as a low-dielectric material in the microelectronics applications.

  13. Damage by radicals and photons during plasma cleaning of porous low-k SiOCH. I. Ar/O{sub 2} and He/H{sub 2} plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Shoeb, Juline; Wang Mingmei; Kushner, Mark J. [Department of Electrical and Computer Engineering, Iowa State University, Ames, Iowa 50011 (United States); Department of Chemical and Biological Engineering, Iowa State University, Ames, Iowa 50011 (United States); Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109 (United States)

    2012-07-15

    Porous dielectric materials offer lower capacitances that reduce RC time delays in integrated circuits. Typical porous low dielectric (low-k) materials include SiOCH-silicon dioxide with carbon groups, principally -CH{sub 3}, lining the pores. Fluorocarbon plasmas are often used to etch such low-k materials. These processes leave a fluorocarbon polymer on the SiOCH surface that must be removed, often with oxygen or hydrogen containing plasmas. Pores open to the surface and that are internally connected provide pathways for reactive species to enter into the porous network and produce damage. For example, during cleaning using O{sub 2} containing plasmas, reactions of O atoms with -CH{sub 3} groups can increase the k-value by removing C atoms. Vacuum ultraviolet (VUV) photons produced by the plasma and that penetrate into the material can scission -Si-CH{sub 3} bonds and accelerate the removal of -CH{sub 3} groups. This paper reports on results from a computational investigation of Ar/O{sub 2} and He/H{sub 2} plasma cleaning of porous SiOCH when including the effects of VUV photons. The authors found that He/H{sub 2} plasmas are able to clean CF{sub x} polymers deposited during etching while producing milder damage to underlying -CH{sub 3} sites compared to O{sub 2} plasmas due to the lower reactivity of H atoms and the shorter penetration distance of photons produced in He/H{sub 2} plasmas.

  14. Investigation of low field dielectric properties of anisotropic porous Pb(Zr,Ti)O3 ceramics: Experiment and modeling

    Science.gov (United States)

    Olariu, C. S.; Padurariu, L.; Stanculescu, R.; Baldisserri, C.; Galassi, C.; Mitoseriu, L.

    2013-12-01

    Anisotropic porous Pb(Zr,Ti)O3 ceramics with various porosity degrees have been studied in order to determine the role of the pore shape and orientation on the low-field dielectric properties. Ceramic samples with formula Pb(Zr0.52Ti0.48)0.976Nb0.024O3 with different porosity degrees (dense, 10%, 20%, 40% vol.) have been prepared by solid state reaction. Taking into consideration the shape and orientation of the pore inclusions, the dielectric properties of porous ceramics have been described by using adapted mixing rules models. Rigorous bounds, derived on the basis on Variational Principle, were used to frame dielectric properties of porous composites. The finite element method (FEM) was additionally used to simulate the dielectric response of the porous composites under various applied fields. Among the few effective medium approximation models adapted for anisotropic oriented inclusions, the best results were obtained in case of needle-like shape inclusions (which do not correspond to the real shape of microstructure inclusions). The general case of Wiener bounds limited well the dielectric properties of anisotropic porous composites in case of parallel orientation. Among the theoretical approaches, FEM technique allowed to simulate the distribution of potential and electric field inside composites and provided a very good agreement between the computed permittivity values and experimental ones.

  15. Raman Spectra of High-κ Dielectric Layers Investigated with Micro-Raman Spectroscopy Comparison with Silicon Dioxide

    Directory of Open Access Journals (Sweden)

    P. Borowicz

    2013-01-01

    Full Text Available Three samples with dielectric layers from high-κ dielectrics, hafnium oxide, gadolinium-silicon oxide, and lanthanum-lutetium oxide on silicon substrate were studied by Raman spectroscopy. The results obtained for high-κ dielectrics were compared with spectra recorded for silicon dioxide. Raman spectra suggest the similarity of gadolinium-silicon oxide and lanthanum-lutetium oxide to the bulk nondensified silicon dioxide. The temperature treatment of hafnium oxide shows the evolution of the structure of this material. Raman spectra recorded for as-deposited hafnium oxide are similar to the results obtained for silicon dioxide layer. After thermal treatment especially at higher temperatures (600°C and above, the structure of hafnium oxide becomes similar to the bulk non-densified silicon dioxide.

  16. Deposition of porous low-k thin films using Tween 80 porogen for ILD application in ULSI circuits

    Science.gov (United States)

    Mhaisagar, Yogesh S.; Kawishwar, Renuka; Joshi, Bhavana N.; Mahajan, A. M.

    2012-10-01

    The porous silica low-k thin films were deposited by using Sol-gel spin coating technique. The tetraethylorthosilicate (TEOS) was used as a source of Si and the porogen Tween 80 was used for the introduction of porosity of the films. The chemical bondings of porous low-k SiO2 films have been realized by using Fourier transform infrared spectroscopy (FT-IR). The appearance of stretching, bending and rocking peaks at 1075.8, 967, 426 cm-1 respectively confirms the formation of Si-O-Si network. The Refractive index (RI) and thickness of the films were determined by using ellipsometer. Further, from RI the density and porosity of the films was estimated using standard formula. As from results it's seems that the density of the films reduces after the addition of Tween 80. The lowest value of films density after the addition of Tween 80 was found to be 1.27 g/cm3. The reduction in the film density results in increase of the porosity of films due to the removal of porogen during the curing. The increase in film porosity from 6% to 45% resulted in lower in the dielectric constant to 2.58.

  17. Investigation of the feasibility of in-situ dielectric property measurements on neutron-irradiated ceramic insulators

    Energy Technology Data Exchange (ETDEWEB)

    Goulding, R.H.; Zinkle, S.J. [Oak Ridge National Lab., TN (United States)

    1996-04-01

    Computer modeling and experimental benchtop tests have demonstrated that a capacitively loaded resonant coaxial cavity can produce accurate in-situ measurements of the loss tangent and dielectric constant of ceramic insulators at a frequency of {approx}80 MHZ during fission reactor irradiation. The start of the reactor irradiations has been postponed indefinitely due to budgetary constraints.

  18. Investigation of 6T SRAM memory circuit using high-k dielectrics based nano scale junctionless transistor

    Science.gov (United States)

    Charles Pravin, J.; Nirmal, D.; Prajoon, P.; Mohan Kumar, N.; Ajayan, J.

    2017-04-01

    In this paper the Dual Metal Surround Gate Junctionless Transistor (DMSGJLT) has been implemented with various high-k dielectric. The leakage current in the device is analysed in detail by obtaining the band structure for different high-k dielectric material. It is noticed that with increasing dielectric constant the device provides more resistance for the direct tunnelling of electron in off state. The gate oxide capacitance also shows 0.1 μF improvement with Hafnium Oxide (HfO2) than Silicon Oxide (SiO2). This paved the way for a better memory application when high-k dielectric is used. The Six Transistor (6T) Static Random Access Memory (SRAM) circuit implemented shows 41.4% improvement in read noise margin for HfO2 than SiO2. It also shows 37.49% improvement in write noise margin and 30.16% improvement in hold noise margin for HfO2 than SiO2.

  19. Investigating Effect of Conditioner Aggressiveness on Removal Rate during Interlayer Dielectric Chemical Mechanical Planarization through Confocal Microscopy and Dual Emission Ultraviolet-Enhanced Fluorescence Imaging

    Science.gov (United States)

    Ting Sun,; Len Borucki,; Yun Zhuang,; Yasa Sampurno,; Fransisca Sudargho,; Xiaomin Wei,; Sriram Anjur,; Ara Philipossian,

    2010-02-01

    The effect of conditioner aggressiveness is investigated in interlayer dielectric polishing on three types of pad. A method using confocal microscopy is used to analyze the effect of conditioner aggressiveness on pad-wafer contact. Results show that a more aggressive conditioner produces a higher interlayer dielectric polishing rate while at the same time a pad surface with fewer contacting summits and less contact area. It is found that the ratio of the contacting summit density to the contact area fraction is more important than either parameter measured separately since the ratio determines the mean real contact pressure. Modeling results based on contact area measurements agree well with experimental results. Moreover, it is found that a more aggressive disc also generates a thicker slurry film at the pad-wafer interface. This is in agreement with our general findings regarding pad asperity height distribution obtained using confocal microscopy.

  20. Dielectric Metamaterials

    Science.gov (United States)

    2015-05-29

    Final Report  29 May 2015 Dielectric Metamaterials SRI Project P21340 ONR Contract N00014-12-1-0722 Prepared by: Srini Krishnamurthy...2 2. Theory of Metamaterials ....................................................................................................... 2 2.1...accurately assess the impact of various forms of disorder on metamaterials (MMs) (both dielectric and metal inclusions); and (5) identify designs

  1. The effect of VUV radiation from Ar/O2 plasmas on low-k SiOCH films

    Science.gov (United States)

    Lee, J.; Graves, D. B.

    2011-08-01

    The degradation of porous low-k materials, like SiOCH, under plasma processing continues to be a problem in the next generation of integrated-circuit fabrication. Due to the exposure of the film to many species during plasma treatment, such as photons, ions, radicals, etc, it is difficult to identify the mechanisms responsible for plasma-induced damage. Using a vacuum beam apparatus with a calibrated Xe vacuum ultraviolet (VUV) lamp, we show that 147 nm VUV photons and molecular O2 alone can damage these low-k materials. Using Fourier-transform infrared (FTIR) spectroscopy, we show that VUV/O2 exposure causes a loss of methylated species, resulting in a hydrophilic, SiOx-like layer that is susceptible to H2O absorption, leading to an increased dielectric constant. The effect of VUV radiation on chemical modification of porous SiOCH films in the vacuum beam apparatus and in Ar and O2 plasma exposure was found to be a significant contributor to dielectric damage. Measurements of dielectric constant change using a mercury probe are consistent with chemical modification inferred from FTIR analysis. Furthermore, the extent of chemical modification appears to be limited by the penetration depth of the VUV photons, which is dependent on wavelength of radiation. The creation of a SiOx-like layer near the surface of the material, which grows deeper as more methyl is extracted, introduces a dynamic change of VUV absorption throughout the material over time. As a result, the rate of methyl loss is continuously changing during the exposure. We present a model that attempts to capture this dynamic behaviour and compare the model predictions to experimental data through a fitting parameter that represents the effective photo-induced methyl removal. While this model accurately simulates the methyl loss through VUV exposure by the Xe lamp and Ar plasma, the methyl loss from VUV photons in O2 plasma are only accurately depicted at longer exposure times. We conclude that other

  2. The effect of VUV radiation from Ar/O{sub 2} plasmas on low-k SiOCH films

    Energy Technology Data Exchange (ETDEWEB)

    Lee, J; Graves, D B, E-mail: graves@berkeley.edu [Department of Chemical Engineering, University of California, Berkeley, CA 94720 (United States)

    2011-08-17

    The degradation of porous low-k materials, like SiOCH, under plasma processing continues to be a problem in the next generation of integrated-circuit fabrication. Due to the exposure of the film to many species during plasma treatment, such as photons, ions, radicals, etc, it is difficult to identify the mechanisms responsible for plasma-induced damage. Using a vacuum beam apparatus with a calibrated Xe vacuum ultraviolet (VUV) lamp, we show that 147 nm VUV photons and molecular O{sub 2} alone can damage these low-k materials. Using Fourier-transform infrared (FTIR) spectroscopy, we show that VUV/O{sub 2} exposure causes a loss of methylated species, resulting in a hydrophilic, SiO{sub x}-like layer that is susceptible to H{sub 2}O absorption, leading to an increased dielectric constant. The effect of VUV radiation on chemical modification of porous SiOCH films in the vacuum beam apparatus and in Ar and O{sub 2} plasma exposure was found to be a significant contributor to dielectric damage. Measurements of dielectric constant change using a mercury probe are consistent with chemical modification inferred from FTIR analysis. Furthermore, the extent of chemical modification appears to be limited by the penetration depth of the VUV photons, which is dependent on wavelength of radiation. The creation of a SiO{sub x}-like layer near the surface of the material, which grows deeper as more methyl is extracted, introduces a dynamic change of VUV absorption throughout the material over time. As a result, the rate of methyl loss is continuously changing during the exposure. We present a model that attempts to capture this dynamic behaviour and compare the model predictions to experimental data through a fitting parameter that represents the effective photo-induced methyl removal. While this model accurately simulates the methyl loss through VUV exposure by the Xe lamp and Ar plasma, the methyl loss from VUV photons in O{sub 2} plasma are only accurately depicted at longer

  3. Solution-processable organic dielectrics for graphene electronics

    Science.gov (United States)

    Mattevi, Cecilia; Colléaux, Florian; Kim, HoKwon; Lin, Yen-Hung; Park, Kyung T.; Chhowalla, Manish; Anthopoulos, Thomas D.

    2012-08-01

    We report the fabrication, at low-temperature, of solution processed graphene transistors based on carefully engineered graphene/organic dielectric interfaces. Graphene transistors based on these interfaces show improved performance and reliability when compared with traditional SiO2 based devices. The dielectric materials investigated include Hyflon AD (Solvay), a low-k fluoropolymer, and various organic self-assembled monolayer (SAM) nanodielectrics. Both types of dielectric are solution processed and yield graphene transistors with similar operating characteristics, namely high charge carrier mobility, hysteresis free operation, negligible doping effect and improved operating stability as compared to bare SiO2 based devices. Importantly, the use of SAM nanodielectrics enables the demonstration of low operating voltage ( < |1.5| V), solution-processable and flexible graphene transistors with tunable doping characteristics through molecular engineering of the SAM’s molecular length and terminal group. The work is a significant step towards graphene microelectronics where large-volume and low-temperature processing are required.

  4. Hydraulic Tomography: Continuity and Discontinuity of High-K and Low-K Zones.

    Science.gov (United States)

    Hochstetler, David L; Barrash, Warren; Leven, Carsten; Cardiff, Michael; Chidichimo, Francesco; Kitanidis, Peter K

    2016-03-01

    Hydraulic tomography is an emerging field and modeling method that provides a continuous hydraulic conductivity (K) distribution for an investigated region. Characterization approaches that rely on interpolation between one-dimensional (1D) profiles have limited ability to accurately identify high-K channels, juxtapositions of lenses with high K contrast, and breaches in layers or channels between such profiles. However, locating these features is especially important for groundwater flow and transport modeling, and for design and operation of in situ remediation in complex hydrogeologic environments. We use transient hydraulic tomography to estimate 3D K in a volume of 15-m diameter by 20-m saturated thickness in a highly heterogeneous unconfined alluvial (clay to sand-and-gravel) aquifer with a K range of approximately seven orders of magnitude at an active industrial site in Assemini, Sardinia, Italy. A modified Levenberg-Marquardt algorithm was used for geostatistical inversion to deal with the nonlinear nature of the highly heterogeneous system. The imaging results are validated with pumping tests not used in the tomographic inversion. These tests were conducted from three of five clusters of continuous multichannel tubing (CMTs) installed for observation in the tomographic testing. Locations of high-K continuity and discontinuity, juxtaposition of very high-K and very low-K lenses, and low-K "plugs" are evident in regions of the investigated volume where they likely would not have been identified with interpolation from 1D profiles at the positions of the pumping well and five CMT clusters. Quality assessment methods identified a suspect high-K feature between the tested volume and a lateral boundary of the model.

  5. Attaining 2D Black Phosphorus and Investigations into Floating-Electrode Dielectric Barrier Discharge Treatment of Solutions

    Science.gov (United States)

    Smith, Joshua Benjamin

    -ray diffraction, transmission electron microscopy, and Raman spectroscopy have confirmed successful growth of 2D black phosphorus from red phosphorus thin films for potential uses in 2D semiconductor applications. Additionally, this work discusses some of the chemistry occurring in solution as a result of nonthermal plasma treatment from a floating-electrode dielectric barrier discharge (FE-DBD) configuration. Nonthermal plasma generation allows for the treatment of heat sensitive materials. This has opened up the field to numerous clinical applications of nonthermal plasma treatment including sterilization and wound healing along with potentials in dentistry, dermatology, and even food industries. FE-DBD plasma treatment of water was found to provide a wide-range antimicrobial solution that remained active following 2 years of aging. This plasma-treated water was found to generate a number of ROS/RNS and the formation of these components was studied and verified with UV/Vis and ESR spectroscopy. Enhanced effects were observed when cell culture medium was plasma treated, suggesting the formation of additional reactive species from the plasma treatment of a variety of biomolecules. It is essential to understand these effects for a number of reasons. The possibility to generate a wide range of antimicrobial solutions from air, water, and basic biomolecules could provide a solution for those bacteria that have developed antibiotic resistances. Simultaneously, information into the reaction mechanisms of this FE-DBD plasma treatment can be investigated. All of the applications mentioned above involve complex networks of basic biomolecules, from skin tissue to bacteria cell walls. This work analyzes the effects of plasma treatment on several biomolecule solutions and simultaneously takes aim at understanding some of the potential mechanisms of plasma treatment. Studies were carried out using NMR and GC/MS. This information was used to investigate the possible targeted areas for FE

  6. Fabrication of SrFe12-xNixO19 nanoparticles and investigation on their structural, magnetic and dielectric properties

    Institute of Scientific and Technical Information of China (English)

    S. E. Mousavi Ghahfarokhi; S. Hosseini; M. Zargar Shoushtari

    2015-01-01

    SrFe12−xNixO19 nanoparticles (x = 0–1) were synthesized by a combustion sol–gel method. Their structure, dielectric and magnetic properties were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), an LCR metry, and vibrating sample mag-netometry (VSM).The results reveal that all samples of Ni doped compounds (SrFe12−xNixO19) withx < 0.2 are single phase. It appears that the Fe3+ions are substituted by Ni2+ ions on the crystallographic sites of the SrFe12O19 structure; however, forx≥ 0.2, the secondary Ni phase ferrite (NiFe2O3) appears, which reduces the saturation magnetization and coercivity. In addition, Ni doping reduces the dielectric con-stant, dielectric loss, and alternating current (ac) electrical conductivity of the samples. The variation in ac conductivity (σac) with frequency shows that the electrical conductivity in these ferrites is mainly attributed to the electron hopping mechanism.Therefore; all the single-phase Ni doped samples are suitable for use in magnetic recording media and microwave devices.

  7. Investigation of high-quality ultra-thin LaAlO{sub 3} films as high-k gate dielectrics

    Energy Technology Data Exchange (ETDEWEB)

    Lu, X B [National Laboratory of Solid State Microstructures, Nanjing University, Hankou Road 22, Nanjing 210093 (China); Liu, Z G [National Laboratory of Solid State Microstructures, Nanjing University, Hankou Road 22, Nanjing 210093 (China); Zhang, X [Institute of Microelectronics, Peking University, Beijing 100871 (China); Huang, R [Institute of Microelectronics, Peking University, Beijing 100871 (China); Zhou, H W [Digital DNA Laboratories, Motorola Inc. (China); Wang, X P [Digital DNA Laboratories, Motorola Inc.(China); Nguyen, Bich-Yen [Digital DNA Laboratories, Motorola Inc. (China)

    2003-12-07

    We have studied the formation of a high-quality LaAlO{sub 3} (LAO) film directly on silicon substrates by the pulsed laser deposition method as a novel high-k gate dielectric. The LAO films can remain amorphous at temperatures up to 850 deg. C. An atomic force microscopy study indicated a very smooth surface of the deposited films with a rms of 0.14 nm for an 8 nm LAO film. The structures and electrical properties of metal-dielectric-semiconductor (Pt/LAO/Si) capacitors were investigated with LAO films deposited under different ambient conditions. High-resolution transmission electron microscopy indicated that interfacial reactions often occur for films of LAO deposited under oxygen ambient. A small effective oxide thickness of 1.2 nm was obtained for those films deposited under 20 Pa nitrogen ambient, with the corresponding leakage current density 17.1 mA cm{sup -2} at +1 V gate voltage. It is proposed that amorphous LAO films are a novel promising alternative high-k gate dielectric material in future ultra-large scale integrated devices.

  8. Investigation of light doping and hetero gate dielectric carbon nanotube tunneling field-effect transistor for improved device and circuit-level performance

    Science.gov (United States)

    Wang, Wei; Sun, Yuan; Wang, Huan; Xu, Hongsong; Xu, Min; Jiang, Sitao; Yue, Gongshu

    2016-03-01

    We perform a comparative study (both for device and circuit simulations) of three carbon nanotube tunneling field-effect transistor (CNT-TFET) designs: high-K gate dielectric TFETs (HK-TFETs), hetero gate dielectric TFETs (HTFETs) and a novel CNT-TFET-based combination of light doping and hetero gate dielectric TFETs (LD-HTFETs). At device level, the effects of channel and gate dielectric engineering on the switching and high-frequency characteristics for CNT-TFET have been theoretically investigated using a quantum kinetic model. This model is based on two-dimensional non-equilibrium Green’s functions solved self-consistently with Poisson’s equations. It is revealed that the proposed LD-HTFET structure can significantly reduce leakage current, enhance control ability of the gate on the channel, improve the switching speed, and is more suitable for use in low-power, high-frequency circuits. At circuit level, using HSPICE with look-up table-based Verilog-A models, the performance and reliability of CNT-TFET logic gate circuits is evaluated on the basis of power consumption, average delay, stability, energy consumption and power-delay product (PDP). Simulation results indicate that, compared to a traditional CNT-TFET-based circuit, the one based on LD-HTFET has a significantly better performance (static noise margin, energy, delay, PDP). It is also observed that our proposed design exhibits better robustness under different operational conditions by considering power supply voltage and temperature variations. Our results may be useful for designing and optimizing CNTFET devices and circuits.

  9. Tunable dielectric properties of ferrite-dielectric based metamaterial.

    Science.gov (United States)

    Bi, K; Huang, K; Zeng, L Y; Zhou, M H; Wang, Q M; Wang, Y G; Lei, M

    2015-01-01

    A ferrite-dielectric metamaterial composed of dielectric and ferrite cuboids has been investigated by experiments and simulations. By interacting with the electromagnetic wave, the Mie resonance can take place in the dielectric cuboids and the ferromagnetic precession will appear in the ferrite cuboids. The magnetic field distributions show the electric Mie resonance of the dielectric cuboids can be influenced by the ferromagnetic precession of ferrite cuboids when a certain magnetic field is applied. The effective permittivity of the metamaterial can be tuned by modifying the applied magnetic field. A good agreement between experimental and simulated results is demonstrated, which confirms that these metamaterials can be used for tunable microwave devices.

  10. Multispectral Detection with Metal-Dielectric Filters: An Investigation in Several Wavelength Bands with Temporal Coupled-Mode Theory

    Science.gov (United States)

    Lesmanne, Emeline; Espiau de Lamaestre, Roch; Boutami, Salim; Durantin, Cédric; Dussopt, Laurent; Badano, Giacomo

    2016-09-01

    Multispectral infrared (IR) detection is of great interest to enhance our ability to gather information from a scene. Filtering is a low-cost alternative to the complex multispectral device architectures to which the IR community has devoted much attention. Multilayer dielectric filters are standard in industry, but they require changing the thickness of at least one layer to tune the wavelength. Here, we pursue an approach based on apertures in a metallic layer of fixed thickness, in which the filtered wavelengths are selected by varying the aperture geometry. In particular, we study filters made of at least one sheet of resonating apertures in metal embedded in dielectrics. We will discuss two interesting problems that arise when one attempts to design such filters. First, metallic absorption must be taken into account. Second, the form and size of the pattern is limited by lithography. We will present some design examples and an attempt at explaining the filtering behavior based on the temporal coupled mode theory. That theory models the filter as a resonator interacting with the environment via loss channels. The transmission is solely determined by the loss rates associated with those channels. This model allows us to give a general picture of the filtering performance and compare their characteristics at different wavelength bands.

  11. Multi-hybrid method for investigation of EM scattering from inhomogeneous object above a dielectric rough surface

    Science.gov (United States)

    Li, Jie; Guo, LiXin; He, Qiong; Wei, Bing

    2012-10-01

    An iterative strategy combining Kirchhoff approximation^(KA) with the hybrid finite element-boundary integral (FE-BI) method is presented in this paper to study the interactions between the inhomogeneous object and the underlying rough surface. KA is applied to study scattering from underlying rough surfaces, whereas FE-BI deals with scattering from the above target. Both two methods use updated excitation sources. Huygens equivalence principle and an iterative strategy are employed to consider the multi-scattering effects. This hybrid FE-BI-KA scheme is an improved and generalized version of previous hybrid Kirchhoff approximation-method of moments (KA-MoM). This newly presented hybrid method has the following advantages: (1) the feasibility of modeling multi-scale scattering problems (large scale underlying surface and small scale target); (2) low memory requirement as in hybrid KA-MoM; (3) the ability to deal with scattering from inhomogeneous (including coated or layered) scatterers above rough surfaces. The numerical results are given to evaluate the accuracy of the multi-hybrid technique; the computing time and memory requirements consumed in specific numerical simulation of FE-BI-KA are compared with those of MoM. The convergence performance is analyzed by studying the iteration number variation caused by related parameters. Then bistatic scattering from inhomogeneous object of different configurations above dielectric Gaussian rough surface is calculated and the influences of dielectric compositions and surface roughness on the scattering pattern are discussed.

  12. Investigation of the Size Effect on the Giant Dielectric Constant of CaCu3Ti4O12 Ceramic

    Institute of Scientific and Technical Information of China (English)

    陈恺; 李伟; 刘云飞; 包鹏; 吕笑梅; 朱劲松

    2004-01-01

    Cubic perovskite-related ceramic CaCu3Ti4O12 has a very high dielectric constant larger than 10000 in the kilohertz frequency region. It is almost constant in the 100-600 K region. The ceramic compounds were prepared by conventional solid-state reaction at different sintering temperatures 1040 ℃(C04), 1060 ℃(C06), 1080 ℃(C08),and 1100 ℃(C10). Impedance spectroscopy on Ca Cus Ti4O12 ceramics demonstrates that they are electrically heterogeneous and consist of semi-conducting grains with insulating grain boundaries. It is shown that C06 is the most suitable one for device applications. Surface observation and analysis of the grain-boundary-grained structure were carried out by using scanning electron microscopy, which confirms that the samples have clearly different crystal grain sizes and C06 has a larger grain size of about 20 μm. Compared to the dielectric relaxation spectroscopy, the mechanical relaxation spectroscopy on C06 was performed and a mechanical loss peak was found, which was attributed to the thermally activated behaviour being immanent in the grains.

  13. Surface degradation mechanism during the fluorine-based plasma etching of a low-k material for nanoscale semiconductors.

    Science.gov (United States)

    Kim, Jong Kyu; Kang, Seung Hyun; Cho, Sung Il; Lee, Sung Ho; Kim, Kyong Nam; Yeom, G Y

    2014-12-01

    The degradation of a low-k material surface during the exposure to plasma etching is one of the most serious problems to be solved for the realization of high speed semiconductor devices. In this study, the factors causing the degradation of a low-k material surface during the etching using fluorine-based plasma etching have been investigated by using XPS. As the plasma factors, active radicals, bombardment energy, and charge of the ions were considered and, as the low-k material, methyl silsesquioxane (MSQ) has been used. The XPS results showed that the ion bombardment during the plasma etching of MSQ affects the breaking of MSQ bone structure by changing the Si-O bonds and Si-C bonds to Si-F mostly, while fluorine-based radicals in the plasma mostly affect the change of Si-CH3 bonds to Si-CH(x)F(y). By removing the charge of the ions during the bombardment, the MSQ properties were further improved. When F intensity which is related to the damage of the MSQ surface is estimated, the bombardment energy, reactive radical density, and charge of the ions were responsible for -18%, -53%, -19% of the F intensity in the MSQ. Therefore, by using the neutral beam etching instead of a conventional ICP etching, the degradation on the MSQ surface estimated by the F intensity remaining on the MSQ surface could be decreased to 10%.

  14. Influence of high-energy electron irradiation on ultra-low-k characteristics and transistor performance

    Science.gov (United States)

    Steidel, Katja; Choi, Kang-Hoon; Freitag, Martin; Gutsch, Manuela; Hohle, Christoph; Seidel, Robert; Thrun, Xaver; Werner, Thomas

    2013-03-01

    While significant resources are invested in bringing EUV lithography to the market, multi electron beam direct patterning is still being considered as an alternative or complementary approach for patterning of advanced technology nodes. The possible introduction of direct write technology into an advanced process flow however may lead to new challenges. For example, the impact of high-energy electrons on dielectric materials and devices may lead to changes in the electrical parameters of the circuit compared to parts conventionally exposed by optical lithography. Furthermore, degradation of product reliability may occur. These questions have not yet been clarified in detail. For this study, pre-structured 300mm wafers with a 28nm BEOL stack were dry-exposed at various processing levels using a 50kV variable shaped e-beam direct writer. The electrical parameters of exposed structures were compared to non-exposed structures. The data of line resistance, capacitance, and line to line leakage were found to be within the typical distributions of the standard process. The dielectric breakdown voltages were also comparable between the splits, suggesting no dramatic TDDB performance degradation. With respect to high-k metal gate transistor parameters, a decrease in threshold voltage shift sensitivity was observed as well as a reduced sensitivity to hot carrier injection. More detailed investigations are needed to determine how these findings need to be considered and whether they represent a risk for the introduction of maskless lithography into the process flow of advanced technology nodes.

  15. Effects of O2 Plasma Treatment on the Chemical and Electric Properties of Low-k SiOF Films

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    With the progress of ULS1 technology, materials with low dielectric constant are required to replace SiO2 film as the interlayer to scale down the interconnection delay. Fluorinated Si oxide thin films (SiOF) are a promising material for the low dielectric constant and the process compatibility in existing technology. However, SiOF films are liable to absorb moisture. when exposed to air. By treating the SiOF films with O2 plasma, it was found that the moisture resistibility of SiOF films was remarkably improved. The mechanism of the improvement in stability of dielectric constant was investigated. The results show that: 1) F atoms dissociated from the films and the bond angle of Si-O-Si decreased. 2) The plasma treatment enhanced the strength of Si-F bonds by removing unstable =SiF2 structures in the films. Resistibility of SiOF films in moisture was improved.

  16. Investigation on structural, surface morphological and dielectric properties of Zn-doped SnO{sub 2} nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Sagadevan, Suresh [Department of Physics, AMET University, Chennai (India); Podder, Jiban, E-mail: sureshsagadevan@gmail.com [Department of Chemical and Biological Engineering, University of Saskatchewan (Canada)

    2016-03-15

    Zinc doped Tin oxide (SnO{sub 2}) nanoparticles were prepared by co-precipitation method. The average crystallite size of pure and Zn-doped SnO{sub 2} nanoparticles was calculated from the X-ray diffraction (XRD) pattern. The FT-IR spectrum indicated the strong presence of SnO{sub 2} nanoparticles. The morphology and the particle size were studied using the scanning electron microscope (SEM) and transmission electron microscope (TEM). The particle size of the Zn-doped SnO{sub 2} nanoparticles was also analyzed, using the Dynamic Light Scattering (DLS) experiment. The optical properties were studied by the UV-Visible absorption spectrum. The dielectric properties of Zn-doped SnO{sub 2} nanoparticles were studied at different frequencies and temperatures. The ac conductivity of Zn-doped SnO{sub 2} nanoparticles was also studied. (author)

  17. A theoretical investigation of the laser damage threshold of metal multi-dielectric mirrors for high power ultrashort applications.

    Science.gov (United States)

    Wang, Bin; Gallais, Laurent

    2013-06-17

    An approach for the theoretical evaluation of the damage threshold in optical interference coatings that combine metal and dielectric films is presented. The model that is used combines a matrix formalism to describe the film system with the two temperatures model that describes the energy transfer and the temperatures of electrons and lattice in a solid submitted to a laser irradiation at the femtosecond time scale. With this approach the thermal consequences due to the ultrafast absorption of the metal film can be evaluated in the multilayer stack for single or multiple pulses. Some applications are presented for the case of broadband mirrors for ultrashort pulses with low dispersion. Particularly we study the impact of the metal film (metal element, thickness) and the design on the Laser Induced Damage Threshold in the sub picosecond regime.

  18. Investigating the kinetics of paramagnetic-beads linked alkaline phosphatase enzyme through microchannel resistance measurement in dielectric microchip.

    Science.gov (United States)

    Faure, Mathilde; Sotta, Bruno; Gamby, Jean

    2014-08-15

    Real time monitoring of electrolyte resistance changes during hydrolysis of 4-nitrophenylphosphate (pNPP) by alkaline phosphatase (ALP) bound on paramagnetic-beads was performed into a small dielectric channel. The reaction kinetic fit with a non-competitive substrate-inhibition equation. Michaelis-Menten apparent constant, KM(app), was determined as 0.33±0.06mM and the maximum apparent rate, Vmax(app) as 98±5pMs(-1). The detection limits were 15fM for ALP and 0.75mM for pNPP. This miniaturized device constitutes a powerful tool for analysis of interaction between ligands. Copyright © 2014 Elsevier B.V. All rights reserved.

  19. Dielectric nanostructures with high laser damage threshold

    Science.gov (United States)

    Ngo, C. Y.; Hong, L. Y.; Deng, J.; Khoo, E. H.; Liu, Z.; Wu, R. F.; Teng, J. H.

    2017-02-01

    Dielectric-based metamaterials are proposed to be the ideal candidates for low-loss, high-efficiency devices. However, to employ dielectric nanostructures for high-power applications, the dielectric material must have a high laser-induced damaged threshold (LIDT) value. In this work, we investigated the LIDT values of dielectric nanostructures for high-power fiber laser applications. Consequently, we found that the fabricated SiO2 nanostructured lens can withstand laser fluence exceeding 100 J/cm2.

  20. Hierarchical viscosity of aqueous solution of tilapia scale collagen investigated via dielectric spectroscopy between 500 MHz and 2.5 THz

    Science.gov (United States)

    Kawamata, H.; Kuwaki, S.; Mishina, T.; Ikoma, T.; Tanaka, J.; Nozaki, R.

    2017-03-01

    Aqueous solutions of biomolecules such as proteins are very important model systems for understanding the functions of biomolecules in actual life processes because interactions between biomolecules and the surrounding water molecules are considered to be important determinants of biomolecules’ functions. Globule proteins have been extensively studied via dielectric spectroscopy; the results indicate three relaxation processes originating from fluctuations in the protein molecule, the bound water and the bulk water. However, the characteristics of aqueous solutions of collagens have rarely been investigated. In this work, based on broadband dielectric measurements between 500 MHz and 2.5 THz, we demonstrate that the high viscosity of a collagen aqueous solution is due to the network structure being constructed of rod-like collagen molecules surrounding free water molecules and that the water molecules are not responsible for the viscosity. We determine that the macroscopic viscosity is related to the mean lifetime of the collagen-collagen interactions supporting the networks and that the local viscosity of the water surrounded by the networks is governed by the viscosity of free water as in the bulk. This hierarchical structure in the dynamics of the aqueous solution of biomolecules has been revealed for the first time.

  1. Investigation of a 4H-SiC metal-insulation-semiconductor structure with an Al2O3/SiO2 stacked dielectric

    Institute of Scientific and Technical Information of China (English)

    Tang Xiao-Yan; Song Qing-Wen; Zhang Yu-Ming; Zhang Yi-Men; Jia Ren-Xu; Lü Hong-Liang; Wang Yue-Hu

    2012-01-01

    Atomic layer deposited (ALD) Al2O3/dry-oxidized ultrathin SiO2 films as a high-k gate dielectric grown on 8° off-axis 4H-SiC (0001) epitaxial wafers are investigated in this paper.The metal-insulation-semiconductor (MIS) capacitors,respectively with different gate dielectric stacks (Al2O3/SiO2,Al2O3,and SiO2) are fabricated and compared with each other.The I-V measurements show that the Al2O3/SiO2 stack has a high breakdown field (≥12 MV/cm)comparable to SiO2,and a relatively low gate leakage current of 1 × 10-7 A/cm2 at an electric field of 4 MV/cm comparable to Al2O3.The 1-MHz high frequency C-V measurements exhibit that the Al2O3/SiO2 stack has a smaller positive flat-band voltage shift and hysteresis voltage,indicating a less effective charge and slow-trap density near the interface.

  2. Preparation of Ba0.09Sr0.91TiO3/YBa2Cu3O7-x bilayers and investigation of their dielectric properties

    Science.gov (United States)

    Jia, Jiqiang; Zhao, Gaoyang; Shi, Xiaoxue; Lei, Li

    2016-08-01

    YBa2Cu3O7-x (YBCO) films of 110 nm thickness were prepared on LaAlO3 (LAO) substrates via the sol-gel method. Subsequently, about 400 nm thick Ba0.09Sr0.91TiO3 (BST) films were epitaxially grown on the YBCO and LNO films surface; the BST films exhibited a strong c-axis orientation. The dielectric adjustability and relative dielectric constant was investigated in the range of 300-83 K. Results indicate that the tunability of the Ba0.09Sr0.91TiO3/YBa2Cu3O7-x (BST/YBCO) displayed an increase relative to c-axis-oriented BST on LaNiO3 (LNO). The tunability was further enhanced as the operating temperature decreased, yet the loss tangent (tanδ) decreased. The tunability and the tanδ at 100 kHz and 83 K were 58% and 0.029, respectively.

  3. An Investigation of Structure Transition in Sodium Dodecyl Trioxyethylene Sulfate/n-Butanol/n-Octane/Water System by Dielectric Relaxation Spectroscopy Method

    Institute of Scientific and Technical Information of China (English)

    MU Jian-hai; ZHAO Kong-shuang; WEI Su-xiang; LI Ying; LI Gan-zuo

    2004-01-01

    The phase diagram of the quaternary system of sodium dodecyl trioxyethylene sulfate(SDES)/n-butanol/n-octane/water was obtained at (30.0±0.1) ℃. There exists a clear, isotropic, and low-viscosity L phase, which can be divided into W/O, bi-continuous(B.C.) and O/W microemulsions by conductivity measurement results. Dielectric Relaxation Spectroscopy(DRS) measurements, including permittivity, conductivity, relaxation strength, characteristic relaxation time, dielectric parameters, phase parameters, etc., were applied to investigating the microstructures of the system mentioned above. For the samples with a fixed SDES/n-butanol mass ratio of 4/6 including 20%(mass fraction) of n-octane, DRS indicated a structure transition from a W/O to an O/W via a B.C. microemulsion with the increase of the water content. For the samples with a fixed (SDES/20%n-octane)/H2O mass ratio of 5/5, DRS presented that there only exists a onefold structure of a W/O microemulsion as the (n-butanol/20%n-octane) content increases. The results obtained from DRS are in good agreement with those from the phase diagram.

  4. On the dynamics of Cu ions injection into low-k nanoporous materials under oscillating applied fields

    Science.gov (United States)

    Borja, Juan; Plawsky, Joel. L.; Lu, T.-M.; Gill, William N.

    2013-01-01

    Cu injection into low-k dielectrics was studied using oscillating bipolar field experiments coupled with a mass transport model. Cu/SiCOH/Si structures were stressed using an oscillating square bipolar applied field at 200 °C. Breakdown was defined experimentally as the time it takes for the leakage current to exceed 1 × 10-5 A under given stress conditions. Time to failure was found to depend on field oscillating frequency and amplitude of the applied field. It was determined that ion solubility primarily affects the magnitude of lifetime enhancement, while mobility affects its onset in the frequency domain. Overtime, the local field generated by the accumulation of Cu ions during bias temperature stress resists the action of the oscillating field thus inhibiting the ability to sweep ions from cathode to anode through reversal of the applied field and thereby limits the observed lifetime enhancement. Predictions from the model match trends for experimental data involving transport of Cu ions into SiCOH.

  5. Patterning challenges in the fabrication of 12 nm half-pitch dual damascene copper ultra low-k interconnects

    Science.gov (United States)

    Chawla, J. S.; Singh, K. J.; Myers, A.; Michalak, D. J.; Schenker, R.; Jezewski, C.; Krist, B.; Gstrein, F.; Indukuri, T. K.; Yoo, H. J.

    2014-03-01

    Earlier [1, 2] work highlighted an integrated process for electrically functional 12 nm half-pitch copper interconnects in an ultralow-k interlayer dielectric (ILD). In this paper, we focus on understanding and reducing undesired effects such as pattern asymmetry/distortion, and line undulation/ collapse. Key defect modes and possible solution paths are discussed. Line undulation can occur when the ILD feature changes shape under the stress of the sacrificial hard mask(s) (HM) during patterning, resulting in "wavy" instead of straight features. The amount of undulation is directly related to mechanical properties such as elastic modulus, residual stresses of patterned HMs and the ILD, as well as the dimensions and aspect ratio of the features. Line collapse is observed post wet-clean processing when one or more of the following is true - Insufficient ILD mechanical strength, excessive pattern aspect ratio, or non-uniform drying. Pattern asymmetry, or unequal critical dimensions (CD) of trenches defined by the same backbone, is a typical problem encountered during spacer-based pitch division. In pitch quartering (P/4), three different trench widths result from small variations in backbone lithography, spacer CD and etch bias. Symmetric patterning can be achieved through rigorous control of patterning processes like backbone definition, spacer deposition and downstream etches. Plasma-based ash and energetic metal deposition were also observed to degrade patterning fidelity of ultra low-k film, and also need to be closely managed.

  6. Experimental and Simulation Investigation of Tri-Sector Cylindrical Dielectric Resonator Antenna in composite forms for Wireless Applications

    Science.gov (United States)

    Ranjan, Pinku; Gangwar, Ravi Kumar

    2016-11-01

    In this article, a tri-sector cylindrical dielectric resonator antenna (t-CDRA) has been introduced by splitting CDRA into three uniform sectors and all three uniform sectors are packed together in a compact way on a metallic ground plane. A coaxial probe feed is used to excite the proposed composite t-CDRA at the center position. Multi-segmentation approach has been applied for further improvement in bandwidth of proposed t-CDRA. The proposed composite t-CDRA has been designed using HFSS simulation software and analyzed using theoretical analysis. The prototype of t-CDRA, three elements t-CDRA and three elements dual segment t-CDRA has been fabricated for measurement. The input characteristics, near field, far field distribution of the proposed t-CDRAs have been studied through HFSS simulation software and their results are compared with corresponding experimental results. Proposed segmented t-CDRA has wide impedance bandwidth (|S11|≤-10 dB) of 85 % with monopole-like radiation pattern. The peak gain of segmented t-CDRA has 5.1 dBi with 98.5 % radiation efficiency. The proposed segmented t-CDRA may find suitable applications in 5.0 GHz WLAN and WiMAX band.

  7. Experimental and numerical investigation of a ceramic dielectric resonator (DRA): CaCu{sub 3}Ti{sub 4}O{sub 12} (CCTO)

    Energy Technology Data Exchange (ETDEWEB)

    Almeida, A.F.L. [Departamento de Fisica, Universidade do Aveiro, 3800-193 Aveiro (Portugal); Mestrado em Ciencias Fisicas Aplicadas, Universidade Estadual do Ceara, Campus do Itaperi 1700, CEP 60740-903 Fortaleza, Ceara (Brazil); Laboratorio de Telecomunicacoes e Ciencia e Engenharia dos Materiais (LOCEM), Departamento de Fisica, Universidade Federal do Ceara, Caixa Postal 6030, CEP 60455-760 Fortaleza, Ceara (Brazil); Silva, R.R. [Laboratorio de Telecomunicacoes e Ciencia e Engenharia dos Materiais (LOCEM), Departamento de Fisica, Universidade Federal do Ceara, Caixa Postal 6030, CEP 60455-760 Fortaleza, Ceara (Brazil); Rocha, H.H.B. [Laboratorio de Telecomunicacoes e Ciencia e Engenharia dos Materiais (LOCEM), Departamento de Fisica, Universidade Federal do Ceara, Caixa Postal 6030, CEP 60455-760 Fortaleza, Ceara (Brazil); Departamento de Engenharia de Teleinformatica (DETI), Universidade Federal do Ceara, Caixa Postal 6007, CEP 60.755-640 Fortaleza, Ceara (Brazil); Fechine, P.B.A. [Laboratorio de Telecomunicacoes e Ciencia e Engenharia dos Materiais (LOCEM), Departamento de Fisica, Universidade Federal do Ceara, Caixa Postal 6030, CEP 60455-760 Fortaleza, Ceara (Brazil); Departamento de Quimica Analitica e Fisico-Quimica, Universidade Federal do Ceara - UFC, Campus do Pici, CP 12100, CEP 60451-970 Fortaleza - CE (Brazil); Cavalcanti, F.S.A. [Mestrado em Ciencias Fisicas Aplicadas, Universidade Estadual do Ceara, Campus do Itaperi 1700, CEP 60740-903 Fortaleza, Ceara (Brazil); Valente, M.A. [Departamento de Fisica, Universidade do Aveiro, 3800-193 Aveiro (Portugal); Freire, F.N.A.; Sohn, R.S.T.M. [Laboratorio de Telecomunicacoes e Ciencia e Engenharia dos Materiais (LOCEM), Departamento de Fisica, Universidade Federal do Ceara, Caixa Postal 6030, CEP 60455-760 Fortaleza, Ceara (Brazil)] (and others)

    2008-03-01

    In this study, the CaCu{sub 3}Ti{sub 4}O{sub 12} (CCTO) ceramic phase was synthesized by microwave heating in a much shorter time compared to the conventional heating methods. The results indicate that microwave processing is a promising method for preparing CCTO ceramics. CCTO was prepared using a domestic microwave oven operated at 2.45 GHz with 800 W. After a few minutes of microwave irradiation the formation of CCTO was confirmed by X-ray powder diffraction. The CCTO ceramic was studied in the medium-frequency (MF) range (100 Hz-1 MHz) and in the microwave range of frequencies. The experimental and theoretical characteristics of the dielectric resonator antenna are investigated.

  8. First-principles investigation of the structural, dynamical, and dielectric properties of kesterite, stannite, and PMCA phases of Cu2ZnSnS4

    Science.gov (United States)

    Ramkumar, S. Poyyapakkam; Gillet, Y.; Miglio, A.; van Setten, M. J.; Gonze, X.; Rignanese, G.-M.

    2016-12-01

    Cu2ZnSnS4 (CZTS) is a promising material as an absorber in photovoltaic applications. The measured efficiency, however, is far from the theoretically predicted value for the known CZTS phases. To improve the understanding of this discrepancy, we investigate the structural, dynamical, and dielectric properties of the three main phases of CZTS (kesterite, stannite, and PMCA) using density functional perturbation theory (DFPT). The effect of the exchange-correlation functional on the computed properties is analyzed. A qualitative agreement of the theoretical Raman spectrum with measurements is observed. However, none of the phases correspond to the experimental spectrum within the error bar that is usually to be expected for DFPT. This corroborates the need to consider cation disorder and other lattice defects extensively in this material.

  9. Investigation of the 1D symmetrical linear graded superconductor-dielectric photonic crystals and its potential applications as an optimized low temperature sensors

    Science.gov (United States)

    Baraket, Zina; Zaghdoudi, Jihene; Kanzari, Mounir

    2017-02-01

    Based on the Transfer Matrix Method (TMM) and the two fluid model for a superconductor and by taking account of the thermal expansion effect and thermo optical effects, we theoretically investigates the transmittance spectra of a one dimensional superconductor -dielectric photonic crystal (PC) designed as ((HLS)5/(SLH)5) made up of a BiGeO12(H), SiO2(L) and YaBO2CuO7 (S). The transmittance spectra shows that the system realizes a tunable filter which depends on a nonlinear relation with temperature. It's found that the symmetrical application of a linear deformation d(m) = d0+(m-1).δd(m) where d0 is the initial thickness of the layer m, δd(m) is the elementary added thickness at each layer. This linear gradation of the thickness permits to improve the temperature sensitivity of the system which acts as an optimized low temperature sensor.

  10. Investigations on MgO-dielectric GaN/AlGaN/GaN MOS-HEMTs by using an ultrasonic spray pyrolysis deposition technique

    Science.gov (United States)

    Lee, Ching-Sung; Hsu, Wei-Chou; Liu, Han-Yin; Wu, Ting-Ting; Sun, Wen-Ching; Wei, Sung-Yen; Yu, Sheng-Min

    2016-05-01

    This work investigates GaN/Al0.24Ga0.76N/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) grown on a Si substrate with MgO gate dielectric by using the non-vacuum ultrasonic spray pyrolysis deposition (USPD) technique. The oxide layer thickness is tuned to be 30 nm with the dielectric constant of 8.8. Electron spectroscopy for chemical analysis (ESCA), secondary ion mass spectrometry (SIMS), atomic force microscopy (AFM), transmission electron microscopy (TEM), C-V, low-frequency noise spectra, and pulsed I-V measurements are performed to characterize the interface and oxide quality for the MOS-gate structure. Improved device performances have been successfully achieved for the present MOS-HEMT (Schottky-gate HEMT) design, consisting of a maximum drain-source current density (I DS, max) of 681 (500) mA/mm at V GS = 4 (2) V, I DS at V GS = 0 V (I DSS0) of 329 (289) mA/mm, gate-voltage swing (GVS) of 2.2 (1.6) V, two-terminal gate-drain breakdown voltage (BV GD) of -123 (-104) V, turn-on voltage (V on) of 1.7 (0.8) V, three-terminal off-state drain-source breakdown voltage (BV DS) of 119 (96) V, and on/off current ratio (I on/I off) of 2.5 × 108 (1.2 × 103) at 300 K. Improved high-frequency and power performances are also achieved in the present MOS-HEMT design.

  11. Dielectric elastomer memory

    Science.gov (United States)

    O'Brien, Benjamin M.; McKay, Thomas G.; Xie, Sheng Q.; Calius, Emilio P.; Anderson, Iain A.

    2011-04-01

    Life shows us that the distribution of intelligence throughout flexible muscular networks is a highly successful solution to a wide range of challenges, for example: human hearts, octopi, or even starfish. Recreating this success in engineered systems requires soft actuator technologies with embedded sensing and intelligence. Dielectric Elastomer Actuator(s) (DEA) are promising due to their large stresses and strains, as well as quiet flexible multimodal operation. Recently dielectric elastomer devices were presented with built in sensor, driver, and logic capability enabled by a new concept called the Dielectric Elastomer Switch(es) (DES). DES use electrode piezoresistivity to control the charge on DEA and enable the distribution of intelligence throughout a DEA device. In this paper we advance the capabilities of DES further to form volatile memory elements. A set reset flip-flop with inverted reset line was developed based on DES and DEA. With a 3200V supply the flip-flop behaved appropriately and demonstrated the creation of dielectric elastomer memory capable of changing state in response to 1 second long set and reset pulses. This memory opens up applications such as oscillator, de-bounce, timing, and sequential logic circuits; all of which could be distributed throughout biomimetic actuator arrays. Future work will include miniaturisation to improve response speed, implementation into more complex circuits, and investigation of longer lasting and more sensitive switching materials.

  12. Applicability of point dipoles approximation to all-dielectric metamaterials

    CERN Document Server

    Kuznetsova, S M; Lavrinenko, A V

    2015-01-01

    All-dielectric metamaterials consisting of high-dielectric inclusions in a low-dielectric matrix are considered as a low-loss alternative to resonant metal-based metamaterials. In this contribution we investigate the applicability of the point electric and magnetic dipoles approximation to dielectric meta-atoms on the example of a dielectric ring metamaterial. Despite the large electrical size of high-dielectric meta-atoms, the dipole approximation allows for accurate prediction of the metamaterials properties for the rings with diameters up to ~0.8 of the lattice constant. The results provide important guidelines for design and optimization of all-dielectric metamaterials.

  13. Temperature-dependent activation energy of electromigration in Cu/porous low-k interconnects

    Science.gov (United States)

    Zheng, Hui; Yin, Binfeng; Zhou, Ke; Chen, Leigang; Kuo, Chinte

    2017-08-01

    In this paper, it was reported that the Time-to-Failure (TTF) of electromigration (EM) in Cu/porous low-k interconnects deviated from the classical Black's Equation at 250-350 °C due to moisture invasion. The EM activation energy (Ea) was 1.003 eV at above 300 °C, whereas the apparent value reduced to be negative below 300 °C, being accompanied by significantly narrowed TTF distribution. The corresponding change in the failure mode was distinctly revealed, which indicated that the oxidation of Ta-based liner due to moisture invasion through the porous low-k contributed significantly and modestly to the EM failure below and above 300 °C. The mechanism of the liner oxidation was interpreted with the theory of field-assisted cation migration, which suggested the steep slowdown of the oxidation from 275 to 300 °C could be ascribed to the substantial decrease in the moisture concentration at the low-k/Ta oxide interface, most probably owing to significant suppression of adsorption and surface diffusion of chemisorbed moisture in the nanoporous low-k. The inconsistent EM behaviors at the lower and higher temperatures were thus interpreted by the competition of intrinsic and extrinsic EM controlled separately by Cu diffusion along the Cu/SiN-based cap layer interface and the moisture-damaged Cu/Ta interface.

  14. Eeonomer 200F®: A High-Performance Nanofiller for Polymer Reinforcement—Investigation of the Structure, Morphology and Dielectric Properties of Polyvinyl Alcohol/Eeonomer-200F® Nanocomposites for Embedded Capacitor Applications

    Science.gov (United States)

    Deshmukh, Kalim; Ahamed, M. Basheer; Deshmukh, Rajendra R.; Sadasivuni, Kishor Kumar; Ponnamma, Deepalekshmi; Pasha, S. K. Khadheer; AlMaadeed, Mariam Al-Ali; Polu, Anji Reddy; Chidambaram, K.

    2017-04-01

    In the present study, Eeonomer 200F® was used as a high-performance nanofiller to prepare polyvinyl alcohol (PVA)-based nanocomposite films using a simple and eco-friendly solution casting technique. The prepared PVA/Eeonomer nanocomposite films were further investigated using various techniques including Fourier transform infrared spectroscopy, x-ray diffraction, thermogravimetric analysis, polarized optical microscopy, scanning electron microscopy and mechanical testing. The dielectric behavior of the nanocomposites was examined over a broad frequency range from 50 Hz to 20 MHz and temperatures ranging from 40°C to 150°C. A notable improvement in the thermal stability of the PVA was observed with the incorporation of Eeonomer. The nanocomposites also demonstrated improved mechanical properties due to the fine dispersion of the Eeonomer, and good compatibility and strong interaction between the Eeonomer and the PVA matrix. A significant improvement was observed in the dielectric properties of the PVA upon the addition of Eeonomer. The nanocomposites containing 5 wt.% Eeonomer exhibited a dielectric constant of about 222.65 (50 Hz, 150°C), which was 18 times that of the dielectric constant (12.33) of neat PVA film under the same experimental conditions. These results thus indicate that PVA/Eeonomer nanocomposites can be used as a flexible high-k dielectric material for embedded capacitor applications.

  15. Intrinsic microwave dielectric loss of lanthanum aluminate.

    Science.gov (United States)

    Shimada, Takeshi; Ichikawa, Koji; Minemura, Tetsuro; Yamauchi, Hiroki; Utsumi, Wataru; Ishii, Yoshinobu; Breeze, Jonathan; Alford, Neil McN

    2010-10-01

    The intrinsic dielectric properties of LaAlO₃ were investigated to understand the microwave properties of several materials containing LaAlO₃. In this study, LaAlO₃ single crystals were prepared by the Czochralski method. The temperature dependence of the dielectric properties and neutron inelastic scattering of the single crystals were measured. From these data, the intrinsic dielectric properties were evaluated and it was found that the dielectric loss of the LaAlO₃ includes two types of dielectric loss. One is a phonon absorption-related loss and the other is a component of the loss arising from Debye- type orientation polarization. The latter affects the room temperature dielectric loss in materials containing LaAlO₃. The present study suggests that avoiding this polarization loss is an important goal in decreasing the total dielectric loss.

  16. Dielectric elastomers, with very high dielectric permittivity, based on silicone and ionic interpenetrating networks

    DEFF Research Database (Denmark)

    Yu, Liyun; Madsen, Frederikke Bahrt; Hvilsted, Søren;

    2015-01-01

    Dielectric elastomers (DEs), which represent an emerging actuator and generator technology, admittedly have many favourable properties, but their high driving voltages are one of the main obstacles to commercialisation. One way to reduce driving voltage is by increasing the ratio between dielectr...... as well as relatively high breakdown strength. All IPNs have higher dielectric losses than pure silicone elastomers, but when accounting for this factor, IPNs still exhibit satisfactory performance improvements....... is demonstrated herein, and a number of many and important parameters, such as dielectric permittivity/loss, viscoelastic properties and dielectric breakdown strength, are investigated. Ionic and silicone elastomer IPNs are promising prospects for dielectric elastomer actuators, since very high permittivities......Dielectric elastomers (DEs), which represent an emerging actuator and generator technology, admittedly have many favourable properties, but their high driving voltages are one of the main obstacles to commercialisation. One way to reduce driving voltage is by increasing the ratio between dielectric...

  17. Dynamics of tetrahydrofuran as minority component in a mixture with poly(2-(dimethylamino)ethyl methacrylate): A neutron scattering and dielectric spectroscopy investigation

    Energy Technology Data Exchange (ETDEWEB)

    Goracci, G., E-mail: sckgorag@ehu.es; Arbe, A. [Centro de Física de Materiales (CFM), CSIC–UPV/EHU–Materials Physics Center - MPC, Paseo Manuel de Lardizabal 5, 20018 San Sebastián (Spain); Alegría, A. [Centro de Física de Materiales (CFM), CSIC–UPV/EHU–Materials Physics Center - MPC, Paseo Manuel de Lardizabal 5, 20018 San Sebastián (Spain); Departamento de Física de Materiales (UPV/EHU), Apartado 1072, 20080 San Sebastián (Spain); Lohstroh, W. [Heinz Maier-Leibnitz Zentrum, Technische Universität München, Lichtenbergstraße 1, D-85748 Garching (Germany); Su, Y. [Jülich Centre for Neutron Science JCNS, Forschungszentrum Jülich GmbH, Outstation at MLZ, Lichtenbergstraße 1, 85747 Garching (Germany); Colmenero, J. [Centro de Física de Materiales - CFM, CSIC–UPV/EHU–Materials Physics Center - MPC, Paseo Manuel de Lardizabal 5, 20018 San Sebastián (Spain); Departamento de Física de Materiales (UPV/EHU), Apartado 1072, 20080 San Sebastián (Spain); Donostia International Physics Center, Paseo Manuel de Lardizabal 4, 20018 San Sebastián (Spain)

    2015-09-07

    We have investigated a mixture of poly(2-(dimethylamino)ethyl methacrylate) (PDMAEMA) and tetrahydrofuran (THF) (70 wt. % PDMAEMA/30 wt. % THF) by combining dielectric spectroscopy and quasielastic neutron scattering (QENS) on a labelled sample, focusing on the dynamics of the THF molecules. Two independent processes have been identified. The “fast” one has been qualified as due to an internal motion of the THF ring leading to hydrogen displacements of about 3 Å with rather broadly distributed activation energies. The “slow” process is characterized by an Arrhenius-like temperature dependence of the characteristic time which persists over more than 9 orders of magnitude in time. The QENS results evidence the confined nature of this process, determining a size of about 8 Å for the volume within which THF hydrogens’ motions are restricted. In a complementary way, we have also investigated the structural features of the sample. This study suggests that THF molecules are well dispersed among side-groups nano-domains in the polymer matrix, ruling out a significant presence of clusters of solvent. Such a good dispersion, together with a rich mobility of the local environment, would prevent cooperativity effects to develop for the structural relaxation of solvent molecules, frustrating thereby the emergence of Vogel-Fulcher-like behavior, at least in the whole temperature interval investigated.

  18. Material design of plasma-enhanced chemical vapour deposition SiCH films for low-k cap layers in the further scaling of ultra-large-scale integrated devices-Cu interconnects

    Directory of Open Access Journals (Sweden)

    Hideharu Shimizu, Shuji Nagano, Akira Uedono, Nobuo Tajima, Takeshi Momose and Yukihiro Shimogaki

    2013-01-01

    Full Text Available Cap layers for Cu interconnects in ultra-large-scale integrated devices (ULSIs, with a low dielectric constant (k-value and strong barrier properties against Cu and moisture diffusion, are required for the future further scaling of ULSIs. There is a trade-off, however, between reducing the k-value and maintaining strong barrier properties. Using quantum mechanical simulations and other theoretical computations, we have designed ideal dielectrics: SiCH films with Si–C2H4–Si networks. Such films were estimated to have low porosity and low k; thus they are the key to realizing a cap layer with a low k and strong barrier properties against diffusion. For fabricating these ideal SiCH films, we designed four novel precursors: isobutyl trimethylsilane, diisobutyl dimethylsilane, 1, 1-divinylsilacyclopentane and 5-silaspiro [4,4] noname, based on quantum chemical calculations, because such fabrication is difficult by controlling only the process conditions in plasma-enhanced chemical vapor deposition (PECVD using conventional precursors. We demonstrated that SiCH films prepared using these newly designed precursors had large amounts of Si–C2H4–Si networks and strong barrier properties. The pore structure of these films was then analyzed by positron annihilation spectroscopy, revealing that these SiCH films actually had low porosity, as we designed. These results validate our material and precursor design concepts for developing a PECVD process capable of fabricating a low-k cap layer.

  19. The effect of vacuum ultraviolet irradiation on the time-dependent dielectric breakdown of organosilicate dielectrics

    Science.gov (United States)

    Pei, D.; Xue, P.; Li, W.; Guo, X.; Lin, Y. H.; Fung, H. S.; Chen, C. C.; Nishi, Y.; Shohet, J. L.

    2016-09-01

    In this work, the effect of vacuum ultraviolet (VUV) exposure on the time-dependent dielectric breakdown (TDDB) properties of porous low-k films was investigated. Synchrotron irradiation was used to simulate the VUV photon irradiation from processing plasmas without any particle flux. The synchrotron flux varies with the wavelength, so the irradiation time was chosen to produce the same fluence at various photon energies. The deterioration of TDDB and generation of negative mobile charge were observed in the film after exposure to the VUV photons with 9 eV or higher energy. These effects were not observed in the films exposed with 7-eV photon energies or less. The creation of paramagnetic defects was observed with the ESR measurement and believed to be the reason for TDDB degradation. Depletion of carbon and breakage and rearrangement of the Si-O-Si structure were observed and believed to be the reason for mobile charge generation and the change in TDDB, chemical, and mechanical properties.

  20. Tunable dielectric properties of ferrite-dielectric based metamaterial.

    Directory of Open Access Journals (Sweden)

    K Bi

    Full Text Available A ferrite-dielectric metamaterial composed of dielectric and ferrite cuboids has been investigated by experiments and simulations. By interacting with the electromagnetic wave, the Mie resonance can take place in the dielectric cuboids and the ferromagnetic precession will appear in the ferrite cuboids. The magnetic field distributions show the electric Mie resonance of the dielectric cuboids can be influenced by the ferromagnetic precession of ferrite cuboids when a certain magnetic field is applied. The effective permittivity of the metamaterial can be tuned by modifying the applied magnetic field. A good agreement between experimental and simulated results is demonstrated, which confirms that these metamaterials can be used for tunable microwave devices.

  1. Are aortic endograft prostheses fully hemo-compatible? A dielectric spectroscopy investigation of the electrical alterations induced on erythrocyte cell membranes

    Energy Technology Data Exchange (ETDEWEB)

    Basoli, Antonio [Clinica Chirurgica II, Universita di Roma ' La Sapienza' , Rome (Italy); Bordi, Federico [Dipartimento di Fisica, Universita di Roma ' La Sapienza' , Rome (Italy); Cametti, Cesare [Dipartimento di Fisica, Universita di Roma ' La Sapienza' , Rome (Italy); Faraglia, Vittorio [Cattedra di Chirurgia Vascolare, Second School of Medicine, Universita di Roma ' La Sapienza' , Rome (Italy); Gili, Tommaso [Dipartimento di Fisica, Universita di Roma ' La Sapienza' , Rome (Italy); Rizzo, Luigi [Cattedra di Chirurgia Vascolare, Second School of Medicine, Universita di Roma ' La Sapienza' , Rome (Italy); Taurino, Maurizio [Cattedra di Chirurgia Vascolare, Second School of Medicine, Universita di Roma ' La Sapienza' , Rome (Italy)

    2007-03-01

    In this paper we present a new approach directed to ascertain the full hemo-compatibility of aortic endograft prostheses based on the measurement of the passive electrical parameters of the erythrocyte cell membrane. The red blood cell membrane, from an electric point of view, is characterized by an electrical permittivity, {epsilon}{sub s}, which takes into account the structural charged organization of the lipid double layer, and by the electrical conductivity, {sigma}{sub s}, which accounts for the ionic transport processes across the membrane. These parameters can be easily measured by means of a radiowave dielectric spectroscopy technique, analyzing the dependence of the electrical impedance of an erythrocyte suspension on the frequency of the applied electric field. In this preliminary report, we investigate the alterations induced, at a membrane level, by two different devices commonly employed for endovascular abdominal aortic aneurysm exclusion, i.e., Excluder (registered) and Zenith (registered) devices, implanted in ten patients. We observe, in all the cases investigated, a statistically significant increase of both the permittivity {epsilon}{sub s} and electrical conductivity {sigma}{sub s} of the erythrocyte membrane upon the prosthesis implant, this increase being higher than about 20% of the un-treated values. Moreover, these alterations remain roughly unaffected 30 days after surgery. These findings suggest that a complete hemo-compatibility of these prostheses is lacking, even if the observed alterations may not have a clinical relevance.

  2. Stochastic behavior of nanoscale dielectric wall buckling

    Science.gov (United States)

    Friedman, Lawrence H.; Levin, Igor; Cook, Robert F.

    2016-01-01

    The random buckling patterns of nanoscale dielectric walls are analyzed using a nonlinear multi-scale stochastic method that combines experimental measurements with simulations. The dielectric walls, approximately 200 nm tall and 20 nm wide, consist of compliant, low dielectric constant (low-k) fins capped with stiff, compressively stressed TiN lines that provide the driving force for buckling. The deflections of the buckled lines exhibit sinusoidal pseudoperiodicity with amplitude fluctuation and phase decorrelation arising from stochastic variations in wall geometry, properties, and stress state at length scales shorter than the characteristic deflection wavelength of about 1000 nm. The buckling patterns are analyzed and modeled at two length scales: a longer scale (up to 5000 nm) that treats randomness as a longer-scale measurable quantity, and a shorter-scale (down to 20 nm) that treats buckling as a deterministic phenomenon. Statistical simulation is used to join the two length scales. Through this approach, the buckling model is validated and material properties and stress states are inferred. In particular, the stress state of TiN lines in three different systems is determined, along with the elastic moduli of low-k fins and the amplitudes of the small-scale random fluctuations in wall properties—all in the as-processed state. The important case of stochastic effects giving rise to buckling in a deterministically sub-critical buckling state is demonstrated. The nonlinear multiscale stochastic analysis provides guidance for design of low-k structures with acceptable buckling behavior and serves as a template for how randomness that is common to nanoscale phenomena might be measured and analyzed in other contexts. PMID:27330220

  3. Dielectric metasurfaces

    Science.gov (United States)

    Valentine, Jason

    While plasmonics metasurfaces have seen much development over the past several years, they still face throughput limitations due to ohmic losses. On the other hand, dielectric resonators and associated metasurfaces can eliminate the issue of ohmic loss while still providing the freedom to engineer the optical properties of the composite. In this talk, I will present our recent efforts to harness this freedom using metasurfaces formed from silicon and fabricated using CMOS-compatible techniques. Operating in the telecommunications band, I will discuss how we have used this platform to realize a number of novel functionalities including wavefront control, near-perfect reflection, and high quality factor resonances. In many cases the optical performance of these silicon-based metasurfaces can surpass their plasmonic counterparts. Furthermore, for some cases the surfaces are more amenable to large-area fabrication techniques.

  4. Study of porogen removal by atomic hydrogen generated by hot wire chemical vapor deposition for the fabrication of advanced low-k thin films

    Energy Technology Data Exchange (ETDEWEB)

    Godavarthi, S., E-mail: srinivas@cinvestav.mx [Program of Nanoscience and Nanotechnology, Cinvestav-IPN (Mexico); Universidad Nacional Autonoma de Mexico, Instituto de Ciencias Fisicas, Av. Universidad, Cuernavaca, Morelos (Mexico); Wang, C.; Verdonck, P. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Matsumoto, Y.; Koudriavtsev, I. [Program of Nanoscience and Nanotechnology, Cinvestav-IPN (Mexico); SEES, Electrical Engineering Department, Cinvestav-IPN (Mexico); Dutt, A. [SEES, Electrical Engineering Department, Cinvestav-IPN (Mexico); Tielens, H.; Baklanov, M.R. [imec, Kapeldreef 75, 3001 Leuven (Belgium)

    2015-01-30

    In order to obtain low-k dielectric films, a subtractive technique, which removes sacrificial porogens from a hydrogenated silicon oxycarbide (SiOC:H) film, has been used successfully by different groups in the past. In this paper, we report on the porogen removal from porogenated SiOC:H films, using a hot wire chemical vapor deposition (HWCVD) equipment. Molecular hydrogen is dissociated into atomic hydrogen by the hot wires and these atoms may successfully remove the hydrocarbon groups from the porogenated SiOC:H films. The temperature of the HWCVD filaments proved to be a determining factor. By Fourier transform infrared spectroscopy, X-ray reflectivity (XRR), secondary ion mass spectrometry (SIMS), ellipsometric porosimetry and capacitance-voltage analyses, it was possible to determine that for temperatures higher than 1700 °C, efficient porogen removal occurred. For temperatures higher than 1800 °C, the presence of OH groups was detected. The dielectric constant was the lowest, 2.28, for the samples processed at a filament temperature of 1800 °C, although porosity measurements showed higher porosity for the films deposited at the higher temperatures. XRR and SIMS analyses indicated densification and Tungsten (W) incorporation at the top few nanometers of the films.

  5. Effect of the C-bridge length on the ultraviolet-resistance of oxycarbosilane low-k films

    Science.gov (United States)

    Redzheb, M.; Prager, L.; Naumov, S.; Krishtab, M.; Armini, S.; Van Der Voort, P.; Baklanov, M. R.

    2016-01-01

    The ultra-violet (UV) and vacuum ultra-violet (VUV) resistance of bridging alkylene groups in organosilica films has been investigated. Similar to the Si-CH3 (methyl) bonds, the Si-CH2-Si (methylene) bonds are not affected by 5.6 eV irradiation. On the other hand, the concentration of the Si-CH2-CH2-Si (ethylene) groups decreases during such UV exposure. More significant difference in alkylene reduction is observed when the films are exposed to VUV (7.2 eV). The ethylene groups are depleted by more than 75% while only about 40% methylene and methyl groups loss is observed. The different sensitivity of bridging groups to VUV light should be taken into account during the development of curing and plasma etch processes of low-k materials based on periodic mesoporous organosilicas and oxycarbosilanes. The experimental results are qualitatively supported by ab-initio quantum-chemical calculations.

  6. Investigation on the dielectric response of NdMnO3/LSAT thin films: Effect of 200 MeV Ag+15 ion irradiation

    Science.gov (United States)

    Udeshi, Malay; Vyas, Brinda; Trivedi, Priyanka; Katba, Savan; Ravalia, Ashish; Solanki, P. S.; Shah, N. A.; Asokan, K.; Ojha, S.; Kuberkar, D. G.

    2015-12-01

    We report the results of the modifications in structural and dielectric behaviour of pulsed laser deposited NdMnO3 manganite thin films grown on (1 0 0) single crystalline (LaAlO3)0.3 (Sr2AlTaO6)0.7 substrate irradiated with the 200 MeV Ag+15 ion irradiation having different fluences, ∼5 × 1010, ∼5 × 1011, ∼5 × 1012 ions/cm2. Structural strain was quantified using analysis of X-ray Diffraction data while Rutherford Backscattering measurements were performed on pristine NdMnO3 film to confirm the elemental composition, thickness and oxygen content. Dielectric measurements performed on all the irradiated films show that, the dielectric constant decreases with increase in ion fluence which has been correlated with the irradiation induced increase in strain at the film-substrate interface. The dielectric relaxation behaviour of pristine and irradiated NdMnO3 films have been understood by fitting the dielectric data using the Cole-Cole plots.

  7. Investigation of dielectric behavior of water and thermally aged of XLPE/BaTiO3 composites in the low-frequency range

    Science.gov (United States)

    Madani, Lakhdar; Belkhiat, Saad; Berrag, Amine; Nemdili, Saad

    2015-10-01

    Cross-Linked Polyethylene (XLPE) is widely used as insulation in electrical engineering, especially as cable insulation sheaths. In order to improve the dielectric properties susceptible to be modified under the effects of thermal aging and water in an absorption environment, polymers are mixed with ceramics. In this paper, the influence of barium titanate (BaTiO3), on the dielectric properties of XLPE has been studied. Dielectric parameters have been measured using an impedance analyzer RLC (WAYNE KERR 6420 type). Fourier transform infrared (FTIR) spectroscopy, scanning electron microscopy and X-ray diffraction were used as characterization techniques. The study has been carried out on two samples of XLPE. A pure sample of each were studied as a unloaded samples to be compared with samples of 5%wt, 10%wt, 15%wt and 20%wt. BaTiO3 loaded XLPE. Afterwards, the composites were subject to humidity and to thermal aging. The incorporation of BaTiO3 1∘C does not modify the crystallinity and morphology of the XLPE and 2∘C reduces the space charges therefore the dielectric losses. tgδ, ɛr and loss index are measured. Frequency response analysis has been followed in the frequency range (20-300 Hz). Experimental results show well that BaTiO3 as nano-filler improves the dielectric properties of XLPE but in excessive content can drive to the cracking and therefore to absorption of water.

  8. Dielectric properties of binary solutions a data handbook

    CERN Document Server

    Akhadov, Y Y

    1980-01-01

    Dielectric Properties of Binary Solutions focuses on the investigation of the dielectric properties of solutions, as well as the molecular interactions and mechanisms of molecular processes that occur in liquids. The book first discusses the fundamental formulas describing the dielectric properties of liquids and dielectric data for binary systems of non-aqueous solutions. Topics include permittivity and dielectric dispersion parameters of non-aqueous solutions of organic and inorganic compounds. The text also tackles dielectric data for binary systems of aqueous solutions, including permittiv

  9. Investigation on structural, optical, thermal, mechanical and dielectric properties of L-proline cadmium chloride monohydrate single crystals: An efficient NLO material

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Preeti; Hasmuddin, Mohd [Crystal Growth and XRD Lab, Department of Physics, Jamia Millia Islamia, New Delhi 110 025 (India); Shakir, Mohd [Crystal Growth and XRD Lab, Department of Physics, Jamia Millia Islamia, New Delhi 110 025 (India); CSIR-National Physical Laboratory, New Delhi 110 012 (India); Department of Physics, ARSD College, University of Delhi, New Delhi 110021 (India); Vijayan, N. [Department of Physics, Kakatiya University, Warangal 506 009 (India); Abdullah, M.M. [Crystal Growth and XRD Lab, Department of Physics, Jamia Millia Islamia, New Delhi 110 025 (India); Advanced Materials and Nano-research Centre (AMNC), Faculty of Science and Arts, Najran University, P.O. Box-1988, Najran 11001 (Saudi Arabia); Ganesh, V. [Department of Physics, Kakatiya University, Warangal 506 009 (India); Wahab, M.A., E-mail: aries.pre84@gmail.com [Crystal Growth and XRD Lab, Department of Physics, Jamia Millia Islamia, New Delhi 110 025 (India)

    2013-10-01

    In the present work, we have grown single crystals of L-proline cadmium chloride monohydrate (LPCCM) by slow evaporation solution technique (SEST) at room temperature and recorded their live growth kinetics with the help of inverted microscope. Crystal size at various stages of growth and its corresponding morphology was also recorded. Powder X-ray diffraction (PXRD) analysis of LPCCM single crystals confirmed the orthorhombic structure. Respective values of crystallite size, strain and dislocation density have been calculated using PXRD data. Metal complex coordination of the single crystal is studied by FTIR spectroscopic. The optical properties of the grown crystals were investigated through UV–VIS spectroscopic studies and shows that the crystals have very low absorption in entire characterized wavelength range 200–800 nm. The optical band gap was calculated and found to be ∼5.6 eV. Optical constants of the material is determined by theoretical calculations. The chemical etching study was also carried out to study the density of defects in the grown crystals. The photoluminous excitation and emission spectra and thermal property by TGA/DTA curve were recorded. Further, the mechanical properties have been studied using Vicker's microhardness tester as well as many parameters such as fracture toughness (K{sub c}), Brittleness index (B{sub i}) and yield strength (σ{sub ν}) are presented. Dielectric studies have been carried out with varying frequency and temperatures. - Highlights: • The morphology of LPCCM crystal was observed during growth under inverted microscope. • Observation also shows defects also grows with the growth of crystal. • Positive temperature coefficient is observed. • The optical study shows its suitability for photonics and optical applications.

  10. Kinetic Monte Carlo Simulation of Cation Diffusion in Low-K Ceramics

    Science.gov (United States)

    Good, Brian

    2013-01-01

    Low thermal conductivity (low-K) ceramic materials are of interest to the aerospace community for use as the thermal barrier component of coating systems for turbine engine components. In particular, zirconia-based materials exhibit both low thermal conductivity and structural stability at high temperature, making them suitable for such applications. Because creep is one of the potential failure modes, and because diffusion is a mechanism by which creep takes place, we have performed computer simulations of cation diffusion in a variety of zirconia-based low-K materials. The kinetic Monte Carlo simulation method is an alternative to the more widely known molecular dynamics (MD) method. It is designed to study "infrequent-event" processes, such as diffusion, for which MD simulation can be highly inefficient. We describe the results of kinetic Monte Carlo computer simulations of cation diffusion in several zirconia-based materials, specifically, zirconia doped with Y, Gd, Nb and Yb. Diffusion paths are identified, and migration energy barriers are obtained from density functional calculations and from the literature. We present results on the temperature dependence of the diffusivity, and on the effects of the presence of oxygen vacancies in cation diffusion barrier complexes as well.

  11. A human-phantom coupling experiment and a dispersive simulation model for investigating the variation of dielectric properties of biological tissues.

    Science.gov (United States)

    Gomez-Tames, Jose; Fukuhara, Yuto; He, Siyu; Saito, Kazuyuki; Ito, Koichi; Yu, Wenwei

    2015-06-01

    Variation of the dielectric properties of tissues could happen due to aging, moisture of the skin, muscle denervation, and variation of blood flow by temperature. Several studies used burst-modulated alternating stimulation to improve activation and comfort by reducing tissue impedance as a possible mechanism to generate muscle activation with less energy. The study of the effect of dielectric properties of biological tissues in nerve activation presents a fundamental problem, which is the difficulty of systematically changing the morphological factors and dielectric properties of the subjects under study. We tackle this problem by using a simulation and an experimental study. The experimental study is a novel method that combines a fat tissue-equivalent phantom, with known and adjustable dielectric properties, with the human thigh. In this way, the dispersion of the tissue under study could be modified to observe its effects systematically in muscle activation. We observed that, to generate a given amount of muscle or nerve activation under conditions of decreased impedance, the magnitude of the current needs to be increased while the magnitude of the voltage needs to be decreased.

  12. Investigation on dielectric relaxation of PMMA-grafted natural rubber incorporated with LiCF{sub 3}SO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Yap, K.S.; Teo, L.P.; Sim, L.N.; Majid, S.R. [Centre for Ionics University of Malaya, Physics Department, University of Malaya, 50603 Kuala Lumpur (Malaysia); Arof, A.K., E-mail: akarof@um.edu.my [Centre for Ionics University of Malaya, Physics Department, University of Malaya, 50603 Kuala Lumpur (Malaysia)

    2012-07-01

    Natural rubber (NR) grafted with 30 wt% poly (methyl methacrylate) (PMMA) and designated as MG30 has been added with varying amounts of LiCF{sub 3}SO{sub 3}. X-ray diffraction (XRD) shows the samples to be amorphous. Fourier transform infrared (FTIR) spectroscopy indicates complexation between the cation of the salt and the oxygen atom of the C=O and -COO- groups of MG30. From electrochemical impedance spectroscopy (EIS), MG30 with 30 wt% LiCF{sub 3}SO{sub 3} salt exhibits the highest ambient conductivity of 1.69 Multiplication-Sign 10{sup -6} S cm{sup -1} and lowest activation energy of 0.24 eV. The dielectric behavior has been analyzed using dielectric permittivity ({epsilon} Prime), dissipation factor (tan {delta}) and dielectric modulus (M{sup Low-Asterisk }) of the samples. The dielectric constant of pure MG30 has been estimated to be {approx}1.86.

  13. Cu passivation for integration of gap-filling ultralow-k dielectrics

    Science.gov (United States)

    Zhang, Liping; de Marneffe, Jean-Francois; Lesniewska, Alicja; Verdonck, Patrick; Heylen, Nancy; Murdoch, Gayle; Croes, Kristof; Boemmels, Juergen; Tokei, Zsolt; De Gendt, Stefan; Baklanov, Mikhail R.

    2016-12-01

    For Cu/low-k interconnects, the reversed damascene is an alternative integration approach where the metal wires are patterned first and then the spacing filled with a flowable dielectric. In this paper, the replacement of a sacrificial template by gap-filling ultralow-k dielectrics is studied, focusing on yield and transport performance ("replacement dielectric" scheme). On non-passivated copper, the low-k curing processes induce severe damage to the metal lines, leading to the degraded electrical properties. This is confirmed by chemical inspection on the blanket Cu films and morphological inspection on patterned structures. In order to avoid Cu oxidation and out-diffusion at elevated temperature, Cu passivation by plasma-enhanced chemical vapor deposition SiCN is proposed and studied in detail. The inter-metal dielectric properties of replacement low-k are evaluated by resistance-capacitance and IV measurements using a Meander-Fork structure. By tuning the passivation layer thickness and ultraviolet curing time, high electrical yield is obtained with integrated porous low-k showing promising effective k-values (keff) and breakdown voltages (Ebd), confirming the interest of this specific integration scheme.

  14. Temperature dependence of the dielectric properties of rubber wood

    Science.gov (United States)

    Mohammed Firoz Kabir; Wan M. Daud; Kaida B. Khalid; Haji A.A. Sidek

    2001-01-01

    The effect of temperature on the dielectric properties of rubber wood was investigated in three anisotropic directions—longitudinal, radial, and tangential, and at different measurement frequencies. Low frequency measurements were conducted with a dielectric spectrometer, and high frequencies used microwave applied with open-ended coaxial probe sensors. Dielectric...

  15. Dielectric studies of wheat in powder form at microwave frequencies.

    Science.gov (United States)

    Sharma, Kavita; Jain, Ritu; Bhargava, Nidhi; Sharma, Ritu; Sharma, K S

    2010-10-01

    Dielectric constant and loss factor of Raj-4120 variety of Indian wheat were determined in powder form (grain size 125 to 150 micron) at room temperature. Microwaves at three different frequencies were employed in C-band, X-band and Ku-band respectively for investigating frequency dependence of dielectric parameters of the sample. Bulk dielectric values of the sample were determined by employing the dielectric mixture relations, such as, half power mixture equation, Landau and Lifshitz, Looyenga equation etc.

  16. SU-8 as Hydrophobic and Dielectric Thin Film in Electrowetting-on-Dielectric Based Microfluidics Device

    OpenAIRE

    Vijay Kumar; N. N. Sharma

    2012-01-01

    Electrowetting-on-dielectric (EWOD) based droplet actuation in microfluidic chip is designed and fabricated. EWOD is used as on-chip micro-pumping scheme for moving fluid digitally in Lab-on-a-chip devices. For enabling this scheme, stacked deposition of thin dielectric and hydrophobic layer in that order between microchannel and electrodes is done. The present paper investigates the potential use of SU-8 as hydrophobic layer in conjunction of acting as dielectric in the device. The objective...

  17. Investigation of structure-dielectric property relationships in zirconium oxide, tantalum pentoxide, and oxide-polymer laminate films for high energy density capacitor applications

    Science.gov (United States)

    Sethi, Guneet

    Pulsed power applications involve transformation of electrical energy into high-peak power pulses through capacitors. There is an immediate need for fast-response capacitors with decreased volume, weight, and cost for pulsed power applications and power distribution systems. This research challenge is dominated by energy density. Energy density is directly related to dielectric properties such as dielectric polarization, conductivity and breakdown strength of the capacitor dielectric. This research work correlates processing and microstructure of single and multiple component dielectric films with their dielectric properties. The inorganic materials studied in this dissertation include zirconium oxide (ZrO2) and tantalum pentoxide (Ta 2O5) reactive sputtered films. Film crystallization & structure was studied as a function of sputtering growth variables such as sputtering power, sputtering pressure, source frequency, oxygen pressure, substrate temperature, substrate material, and post-deposition annealing temperature. Polycrystalline phase of ZrO2 and amorphous phase of Ta2O 5 were obtained for most sputtering growth variables. Although the amorphous films have lower permittivity (32 for amorphous & 51 for polycrystalline at 1 kHz), they also have lower AC and DC conductivities (3.4x10-8 S/m for amorphous & 12.2x10 -8 S/m for polycrystalline at 1 kHz), which result in high breakdown strength than polycrystalline films. Amorphous Ta2O5 films are found to be ideal for high-energy density capacitors with energy density of 14 J/cm3 because of their high permittivity, low leakage current density, and high dielectric breakdown strength. Oxide films were combined with different polymers (polyvinyldene flouride-triflouroethylene, polypropylene and polyethylene terephthalate) to produce two different kinds of laminate composites---oxide on polymer and polymer on oxide. Permittivity and conductivity differences in the polymer and oxide films result in an impedance contrast

  18. Investigation on microstructure and dielectric behaviour of (Ba0.999−Gd0.001Cr)TiO3 ceramics

    Indian Academy of Sciences (India)

    Shivanand Madolappa; Raghavendra Sagar; Nagbasavanna Sharanappa; R L Raibagkar

    2013-08-01

    Ceramics of BaTiO3 co-doped with Gd and Cr at Ba-site was synthesized via solid-state reaction route. Surface morphology shows the increase in grain size with the increase of Cr-content below 3 mol%. The high value of in the synthesized samples is associated with space charge polarization and inhomogeneous dielectric structure. Gd is diffused well into the most of Ba sites and vacancies leaving very few defects or voids for the generation of absorption current which results in dielectric loss. Below 3 mol% of Cr-concentration, dissipation factor was improved. Increase in a.c. conductivity with rise of temperature is due to increase in thermally activated electron drift mobility of charges according to the hopping conduction mechanism. Moreover, samples show the positive temperature coefficient of conductivity, which is most desirable for developing highly sensitive thermal detectors and sensors. Also, higher frequency indicates motion of charges in the ceramic samples.

  19. Effects of heavy metal on dielectric properties of E.coli revealed by dielectric spectroscopy

    Institute of Scientific and Technical Information of China (English)

    Bai Wei; Zhao Kongshuang

    2006-01-01

    Dielectric spectroscopy of E.coli cell before and after exposure to heavy metals Cd2+,Cu2+, Zn2+ and Ca2+ was investigated. The results indicate that changes in dielectric spectra reflect effects of heavy metal on the structure and function of E.coli cells. Heavy metal can change membrane capacitance as well as permittivity and conductivity of the cytoplasm. Changes in volume fraction suggested that dielectric measurement could monitor the growth of E.coli cells. These results demonstrated that dielectric spectroscopy was a potential effective technique for studying electric properties of biological cells.

  20. Dielectrics in electric fields

    CERN Document Server

    Raju, Gorur G

    2003-01-01

    Discover nontraditional applications of dielectric studies in this exceptionally crafted field reference or text for seniors and graduate students in power engineering tracks. This text contains more than 800 display equations and discusses polarization phenomena in dielectrics, the complex dielectric constant in an alternating electric field, dielectric relaxation and interfacial polarization, the measurement of absorption and desorption currents in time domains, and high field conduction phenomena. Dielectrics in Electric Fields is an interdisciplinary reference and text for professionals and students in electrical and electronics, chemical, biochemical, and environmental engineering; physical, surface, and colloid chemistry; materials science; and chemical physics.

  1. Lattices of dielectric resonators

    CERN Document Server

    Trubin, Alexander

    2016-01-01

    This book provides the analytical theory of complex systems composed of a large number of high-Q dielectric resonators. Spherical and cylindrical dielectric resonators with inferior and also whispering gallery oscillations allocated in various lattices are considered. A new approach to S-matrix parameter calculations based on perturbation theory of Maxwell equations, developed for a number of high-Q dielectric bodies, is introduced. All physical relationships are obtained in analytical form and are suitable for further computations. Essential attention is given to a new unified formalism of the description of scattering processes. The general scattering task for coupled eigen oscillations of the whole system of dielectric resonators is described. The equations for the  expansion coefficients are explained in an applicable way. The temporal Green functions for the dielectric resonator are presented. The scattering process of short pulses in dielectric filter structures, dielectric antennas  and lattices of d...

  2. Low-k periodic mesoporous organosilica with air walls: POSS-PMO.

    Science.gov (United States)

    Seino, Makoto; Wang, Wendong; Lofgreen, Jennifer E; Puzzo, Daniel P; Manabe, Takao; Ozin, Geoffrey A

    2011-11-16

    Periodic mesoporous organosilica (PMO) with polyhedral oligomeric silsesquioxane (POSS) air pockets integrated into the pore walls has been prepared by a template-directed, evaporation-induced self-assembly spin-coating procedure to create a hybrid POSS-PMO thin film. A 10-fold increase in the porosity of the POSS-PMO film compared to a reference POSS film is achieved by incorporating ∼1.5 nm pores. The increased porosity results in a decrease in the dielectric constant, k, which goes from 2.03 in a reference POSS film to 1.73 in the POSS-PMO film.

  3. Bimodal condensation silicone elastomers as dielectric elastomers

    DEFF Research Database (Denmark)

    Yu, Liyun; Madsen, Frederikke Bahrt; Skov, Anne Ladegaard

    elastomers were prepared by mixing different mass ratios between long polydimethylsiloxane (PDMS) chains and short PDMS chains. The resulting elastomers were investigated with respect to their rheology, dielectric properties, tensile strength, electrical breakdown, thermal stability, as well...

  4. Effect of the C-bridge length on the ultraviolet-resistance of oxycarbosilane low-k films

    Energy Technology Data Exchange (ETDEWEB)

    Redzheb, M., E-mail: redzheb@imec.be [Imec, Kapeldreef 75, 3001 Leuven (Belgium); Department of Inorganic and Physical Chemistry, Centre for Ordered Materials, Organometallics and Catalysis (COMOC), Ghent University, Krijgslaan 281-S3, B-9000 Ghent (Belgium); Prager, L.; Naumov, S. [Leibniz-Institut für Oberflächenmodifizierung, Permoserstrasse 15, 04318 Leipzig (Germany); Krishtab, M. [Imec, Kapeldreef 75, 3001 Leuven (Belgium); Department of Chemistry, KU Leuven, Celestijnenlaan 200f, 3001 Leuven (Belgium); Armini, S.; Baklanov, M. R. [Imec, Kapeldreef 75, 3001 Leuven (Belgium); Van Der Voort, P. [Department of Inorganic and Physical Chemistry, Centre for Ordered Materials, Organometallics and Catalysis (COMOC), Ghent University, Krijgslaan 281-S3, B-9000 Ghent (Belgium)

    2016-01-04

    The ultra-violet (UV) and vacuum ultra-violet (VUV) resistance of bridging alkylene groups in organosilica films has been investigated. Similar to the Si-CH{sub 3} (methyl) bonds, the Si-CH{sub 2}-Si (methylene) bonds are not affected by 5.6 eV irradiation. On the other hand, the concentration of the Si-CH{sub 2}-CH{sub 2}-Si (ethylene) groups decreases during such UV exposure. More significant difference in alkylene reduction is observed when the films are exposed to VUV (7.2 eV). The ethylene groups are depleted by more than 75% while only about 40% methylene and methyl groups loss is observed. The different sensitivity of bridging groups to VUV light should be taken into account during the development of curing and plasma etch processes of low-k materials based on periodic mesoporous organosilicas and oxycarbosilanes. The experimental results are qualitatively supported by ab-initio quantum-chemical calculations.

  5. Interference harmonics and rigorous EM spectrum analysis method for low-k1 CD Bossung tilt correction

    Science.gov (United States)

    Chou, Shuo-Yen; Ng, Hoi-Tou; Chen, Yi-Yin; Lee, Chien-Fu; Liu, Ru-Gun; Gau, Tsai-Sheng

    2013-04-01

    This paper discusses the CD Bossung tilt phenomena in low-k1 lithography using interference harmonics and rigorous EM spectrum analysis. Interference harmonics analysis is introduced to explain the interaction of diffraction orders in the focal region leading to this abnormal CD behavior. This method decomposes the vector image formula into a superposition of cosine components to describe the interference of diffraction orders. The symmetry properties of components of an optical projection system were investigated to find out three potential sources for the asymmetric Bossung behavior, namely mask 3D (M3D) effect, lens aberration, and wafer reflectivity. Under good lens aberration and substrate reflectivity controls, the M3D effect accounts for most of the CD Bossung tilt. A rigorous EM mask spectral analysis was performed to reveal the impact of mask topography on the near-field intensity of mask transmission and the far-field image formation. From the analysis, the asymmetric phase distribution in the mask spectrum is the root cause for CD Bossung tilt. Using both the interference harmonics and the rigorous EM spectrum analysis, the effect of various resolution enhancement techniques (RET) to the Bossung tilt is also studied to find the best RET combination for M3D immunity. In addition, a pupil optimization algorithm based on these two analyses is proposed to generate the phase compensation map for M3D effect counteraction.

  6. Positronium time of flight measurements of an open-pored spin-on low-k mesoporous film

    Energy Technology Data Exchange (ETDEWEB)

    Tanaka, H K M [Physics Department, University of California, Riverside, Riverside, CA 92521 (United States); Kurihara, T [Slow Positron Facility, Institute of Materials Structure Science (IMSS), High Energy Accelerator Research Organization (KEK), 1-1 Oho, Tsukuba, Ibaraki 305-0801 (Japan); Mills, A P Jr [Physics Department, University of California, Riverside, Riverside, CA 92521 (United States)

    2006-09-20

    Depth-profiled positronium time of flight (Ps-TOF) was measured by implanting slow positron pulses at variable energies into an open-pored spin-on low-k mesoporous film with bimodal pore size distribution arising from zeolite micropores and interparticle mesopores. We estimate the energy of the positronium (Ps) that diffuses out of the target into the vacuum to investigate the slowing down of Ps by collisions with the walls of the micropores (0.5 nm in diameter) and mesopores (4 nm in diameter). The obtained Ps-TOF spectra showed that the temperature of the emitted Ps depends on the positron implantation depth, i.e., the number of collisions with the walls. The data indicate that the pore tortuosity is low in the present sample. However, the slowing down rate seems to increase when the Ps temperature is high. This is probably because when the Ps temperature is high, the Ps energy is higher than the Ps confinement energy for micropores ({approx}3 eV), and the apparent tortuosity increases because there are millions of micropores. The Ps formed in this film has to travel a long distance to escape from the same depth into the vacuum until it slows down below the confinement energy of the zeolite micropores.

  7. Effective Dielectric Response of Composites with Graded Material

    Institute of Scientific and Technical Information of China (English)

    YANG Zi-Dong; WEI En-Bo; SONG Jin-Bao

    2004-01-01

    The effective dielectric response of linear composites containing graded material is investigated under an applied electric field Eo. For the cylindrical inclusion with gradient dielectric function, εi(r) = b+cr, randomly embedded in a host with dielectric constant εm, we have obtained the exact solution of local electric potential of the composite media regions, which obeys a linear constitutive relation D= εE, using hypergeometric function. In dilute limit, we have derived the effective dielectric response of the linear composite media. Furthermore, for larger volume fraction, the formulas of effective dielectric response of the graded composite media are given.

  8. Experimental investigation of dielectric barrier discharge plasma actuators driven by repetitive high-voltage nanosecond pulses with dc or low frequency sinusoidal bias

    Science.gov (United States)

    Opaits, Dmitry F.; Likhanskii, Alexandre V.; Neretti, Gabriele; Zaidi, Sohail; Shneider, Mikhail N.; Miles, Richard B.; Macheret, Sergey O.

    2008-08-01

    Experimental studies were conducted of a flow induced in an initially quiescent room air by a single asymmetric dielectric barrier discharge driven by voltage waveforms consisting of repetitive nanosecond high-voltage pulses superimposed on dc or alternating sinusoidal or square-wave bias voltage. To characterize the pulses and to optimize their matching to the plasma, a numerical code for short pulse calculations with an arbitrary impedance load was developed. A new approach for nonintrusive diagnostics of plasma actuator induced flows in quiescent gas was proposed, consisting of three elements coupled together: the schlieren technique, burst mode of plasma actuator operation, and two-dimensional numerical fluid modeling. The force and heating rate calculated by a plasma model was used as an input to two-dimensional viscous flow solver to predict the time-dependent dielectric barrier discharge induced flow field. This approach allowed us to restore the entire two-dimensional unsteady plasma induced flow pattern as well as characteristics of the plasma induced force. Both the experiments and computations showed the same vortex flow structures induced by the actuator. Parametric studies of the vortices at different bias voltages, pulse polarities, peak pulse voltages, and pulse repetition rates were conducted experimentally. The significance of charge buildup on the dielectric surface was demonstrated. The charge buildup decreases the effective electric field in the plasma and reduces the plasma actuator performance. The accumulated surface charge can be removed by switching the bias polarity, which leads to a newly proposed voltage waveform consisting of high-voltage nanosecond repetitive pulses superimposed on a high-voltage low frequency sinusoidal voltage. Advantages of the new voltage waveform were demonstrated experimentally.

  9. Investigation of the phase formation and dielectric properties of Bi{sub 7}Ta{sub 3}O{sub 18}

    Energy Technology Data Exchange (ETDEWEB)

    Chon, M.P. [Department of Chemistry, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Tan, K.B., E-mail: tankb@science.upm.my [Department of Chemistry, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Khaw, C.C. [Department of Mechanical and Material Engineering, Faculty of Engineering and Science, Universiti Tunku Abdul Rahman, 53300 Setapak, Kuala Lumpur (Malaysia); Zainal, Z.; Taufiq Yap, Y.H. [Department of Chemistry, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Chen, S.K. [Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Tan, P.Y. [Department of Chemistry, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia)

    2014-03-25

    Highlights: • Synthesis condition of Bi{sub 7}TaO{sub 3}O{sub 18} had been determined. • Recombination of intermediate BiTaO{sub 4} and Bi{sub 3}TaO{sub 7} phases are required for the Bi{sub 7}TaO{sub 3}O{sub 18} phase formation. • Stable material as confirmed by thermal and structural analyses. • Typical ferroelectric showing high dielectric constants and low losses. • Resonance and thermal activated polarisation processes are responsible for the excellent dielectric characteristic. -- Abstract: Polycrystalline Bi{sub 7}Ta{sub 3}O{sub 18} was synthesised at the firing temperature of 950 °C over 18 h via conventional solid state method. It crystallised in a monoclinic system with space group C2/m, Z = 4 similar to that reported diffraction pattern in the Inorganic Crystal Structure Database (ICSD), 1-89-6647. The refined lattice parameters were a = 34.060 (3) Å, b = 7.618 (9) Å, c = 6.647 (6) Å with α = γ = 90° and β = 109.210 (7), respectively. The intermediate phase was predominantly in high-symmetry cubic structure below 800 °C and finally evolved into a low-symmetry monoclinic structured, Bi{sub 7}Ta{sub 3}O{sub 18} at 950 °C. The sample contained grains of various shapes with different orientations in the size ranging from 0.33–22.70 μm. The elemental analysis showed the sample had correct stoichiometry with negligible Bi{sub 2}O{sub 3} loss. Bi{sub 7}Ta{sub 3}O{sub 18} was thermally stable and it exhibited a relatively high relative permittivity, 241 and low dielectric loss, 0.004 at room temperature, ∼30 °C and frequency of 1 MHz.

  10. 大气压氖气介质阻挡放电研究%Investigation on Dielectric Barrier Discharge in Neon at Atmospheric Pressure

    Institute of Scientific and Technical Information of China (English)

    冉俊霞; 罗海云; 王新新

    2011-01-01

    为了加深对大气压氖气介质阻挡放电特性的认识,使用电特性测量、高速摄影的手段研究了平板结构大气压氖气介质阻挡放电的击穿电压、放电模式及其演化过程等。实验结果表明,在2~8mm大气压氖气中可很容易地实现均匀放电,并且其放电模式为辉光放电。相比同样条件下的氦气放电,氖气放电的电流密度略小、电流脉冲的半高宽较大。同时测量并比较了气隙的首次击穿与稳态击穿的差异,发现气隙的首次击穿电压较大、击穿时刻偏迟,并基于种子电子的作用对此做出了解释。利用ICCD高速相机拍摄了时间分辨的放电图像,侧面放电图像显示了汤森放电向辉光%In order to have a deep understanding of dielectric barrier discharge(DBD) in neon at atmospheric pressure,the breakdown voltage,the discharge mode and evolution of DBD in a parallel neon gap were investigated by means of electrical measurements and fast photography.Homogenous discharges could be easily produced in 2~8mm gaps in neon and were attributed to glow discharge.Compared to that in helium,the homogenous DBD in neon had a smaller discharge current density and a wider current pulse.The differences between the first breakdown and subsequent steady breakdowns were measured,it was revealed that the first breakdown usually had a higher gap voltage and a later phase,as explained by the seed electrons and penning ionization.High-speed time-resolved photographs of the homogenous discharge in neon were taken using an ICCD camera with an exposure time of 10ns.Side-view photographs showed an evolution from Townsend discharge to glow discharge,which was similar to that observed in helium discharge,while the positive column could hardly be observed in neon at the sub-normal stage of the discharge.The end-view photographs showed a radial development in neon discharge which was also similar to that in helium.

  11. Characterization of dielectric materials

    Energy Technology Data Exchange (ETDEWEB)

    King, Danny J.; Babinec, Susan; Hagans, Patrick L.; Maxey, Lonnie C.; Payzant, Edward A.; Daniel, Claus; Sabau, Adrian S.; Dinwiddie, Ralph B.; Armstrong, Beth L.; Howe, Jane Y.; Wood, III, David L.; Nembhard, Nicole S.

    2017-06-27

    A system and a method for characterizing a dielectric material are provided. The system and method generally include applying an excitation signal to electrodes on opposing sides of the dielectric material to evaluate a property of the dielectric material. The method can further include measuring the capacitive impedance across the dielectric material, and determining a variation in the capacitive impedance with respect to either or both of a time domain and a frequency domain. The measured property can include pore size and surface imperfections. The method can still further include modifying a processing parameter as the dielectric material is formed in response to the detected variations in the capacitive impedance, which can correspond to a non-uniformity in the dielectric material.

  12. Low frequency dielectric spectroscopy of bitumen binders as an indicator of adhesion potential to quartz aggregates using Portland cement

    OpenAIRE

    Lyne, Åsa Laurell; Taylor, Nathaniel; Jaeverberg, Nadja; Edin, Hans; Birgisson, Björn

    2015-01-01

    The purpose of this investigation was to interpret the bitumen-aggregate adhesion based on the dielectric spectroscopic response of individual material components utilizing their dielectric constants, refractive indices and average tangent of the dielectric loss angle (average loss tangent). Dielectric spectroscopy of bitumen binders at room temperature was performed in the frequency range of 0.01–1000 Hz. Dielectric spectroscopy is an experimental method for characterizing the dielectric per...

  13. Epoxy Foam Encapsulants: Processing and Dielectric Characterization

    Energy Technology Data Exchange (ETDEWEB)

    Linda Domeier; Marion Hunter

    1999-01-01

    The dielectric performance of epoxy foams was investigated to determine if such materials might provide advantages over more standard polyurethane foams in the encapsulation of electronic assemblies. Comparisons of the dielectric characteristics of epoxy and urethane encapsulant foams found no significant differences between the two resin types and no significant difference between as-molded and machined foams. This study specifically evaluated the formulation and processing of epoxy foams using simple methylhydrosiloxanes as the flowing agent and compared the dielectric performance of those to urethane foams of similar density.

  14. Resonant dielectric metamaterials

    Science.gov (United States)

    Loui, Hung; Carroll, James; Clem, Paul G; Sinclair, Michael B

    2014-12-02

    A resonant dielectric metamaterial comprises a first and a second set of dielectric scattering particles (e.g., spheres) having different permittivities arranged in a cubic array. The array can be an ordered or randomized array of particles. The resonant dielectric metamaterials are low-loss 3D isotropic materials with negative permittivity and permeability. Such isotropic double negative materials offer polarization and direction independent electromagnetic wave propagation.

  15. Structural, Optical, and Dielectric Investigations of the Relaxor PLZT 9,75/65/35 Ceramics Irradiated by High-Current Pulsed Electron Beam

    CERN Document Server

    Efimov, V V; Kalmikov, A V; Klevtsova, E A; Minashkin, V F; Novikova, N N; Sikolenko, V V; Skripnik, A V; Sternberg, A; Tiutiunnikov, S I; Yakovlev, V A

    2002-01-01

    First time comprehensive study of high-current pulsed electron irradiation effects on the structural, optical and dielectric properties of relaxor (Pb_{(1-x)}La^{x}(Zr_{0.65}Ti_{0.35})_{1-x/4}O_{3} ceramics with x=9.75% has been provided. The electron beam had the following parameters: energy E_{e}=250 keV, current density J_{e}=1000 A/cm^{2}, pulse duration tau = 300 ns, density 10^{15} electrons/cm^{2} per pulse. Infrared reflectivity spectra in the region of 100-2000 cm^{-1} were obtained in virgin, irradiated by 1500 pulses and annealed up to t=500^{circ}C ceramics. The reconstruction of perovskite ABO_{3} structure in irradiated samples has been studied by complex use of X-ray and neutron scattering and IR spectroscopy techniques revealing the changes in transverse and longitudinal phonon modes, oscillators strength and damping of modes. Radiation effects on temperature behaviour of dielectric permittivity in the region of phase transition were studied. The possible mechanisms of pulsed electron irradiat...

  16. Investigation of the Role of Ce3+ Substituted Ions on Dielectric Properties of Co-Cr Ferrites Prepared by Co-precipitation Method

    Science.gov (United States)

    Mustafa, Ghulam; Islam, M. U.; Zhang, Wenli; Arshad, M. I.; Jamil, Yasir; Anwar, Hafeez; Murtaza, G.; Hussain, Mudassar; Ahmad, Mukhtar

    2016-11-01

    A series of a CoCr0.04Ce x Fe1.96- x O4 spinel ferrite system with 0 ≤ x ≤ 0.1 (in steps of 0.02) has been synthesized by the co-precipitation technique. The synthesized samples were characterized using a Fourier transform infrared spectroscope (FT-IR), Raman spectroscopy, a scanning electron microscope (SEM), and dielectric measurements. The typical FT-IR spectrum of the samples annealed at 850°C exhibited two frequency bands due to the formation of octahedral (B-site) and tetrahedral (A-site) clusters of metal oxide, respectively. The SEM images showed the spherical morphology of synthesized material and confirmed the grain size in the range of (0.33-0.44) μm. The decrease of permittivity with the increase of frequency in the range of 1 MHz to 3 GHz follows the Maxwell-Wagner model. Moreover, the Ce3+substituted materials have smaller values of loss tangent and dielectric constant especially for x = 0.10, which is favorable for the applications where low losses are desired. The value of ac (alternating current) conductivity increases with an increase in the frequency and decreases with Ce3+ substitution, which reflects the hopping mechanism at respective sites. Such characteristics of these materials may be suitable for potential applications such as electromagnetic attenuation materials, switching applications, and microwave devices.

  17. Applicability of point-dipoles approximation to all-dielectric metamaterials

    DEFF Research Database (Denmark)

    Kuznetsova, S. M.; Andryieuski, Andrei; Lavrinenko, Andrei

    2015-01-01

    All-dielectric metamaterials consisting of high-dielectric inclusions in a low-dielectric matrix are considered as a low-loss alternative to resonant metal-based metamaterials. In this paper we investigate the applicability of the point electric and magnetic dipoles approximation to dielectric meta......-atoms on the example of a dielectric ring metamaterial. Despite the large electrical size of high-dielectric meta-atoms, the dipole approximation allows for accurate prediction of the metamaterials properties for the rings with diameters up to approximate to 0.8 of the lattice constant. The results provide important...... guidelines for design and optimization of all-dielectric metamaterials....

  18. Method of making dielectric capacitors with increased dielectric breakdown strength

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Beihai; Balachandran, Uthamalingam; Liu, Shanshan

    2017-05-09

    The invention is directed to a process for making a dielectric ceramic film capacitor and the ceramic dielectric laminated capacitor formed therefrom, the dielectric ceramic film capacitors having increased dielectric breakdown strength. The invention increases breakdown strength by embedding a conductive oxide layer between electrode layers within the dielectric layer of the capacitors. The conductive oxide layer redistributes and dissipates charge, thus mitigating charge concentration and micro fractures formed within the dielectric by electric fields.

  19. Behavior of ZnO-coated alumina dielectric barrier discharge in atmospheric pressure air

    CERN Document Server

    Li, Meng; Tao, Xiaoping

    2011-01-01

    A complete investigation of the discharge behavior of dielectric barrier discharge device using ZnO-coated dielectric layer in atmospheric pressure is made. Highly conductive ZnO film was deposited on the dielectric surface. Discharge characteristic of the dielectric barrier discharge are examined in different aspects. Experimental result shows that discharge uniformity is improved definitely in the case of ZnO-coated dielectric barrier discharge. And relevant theoretical models and explanation are presented to describing its discharge physics.

  20. Hetero-gate-Dielectric Symmetric U-shaped gate tunnel FET

    Science.gov (United States)

    Tajally, Mohammad Bagher; Karami, Mohammad Azim

    2017-10-01

    Heterogeneous gate dielectric is used in a nanoscale symmetric U-shaped gate tunnel FET (SUTFET), which resulted in ION, IOFF, subthreshold swing (SS), and Iambipolar enhancement. ION of 1.5 × 10-5 A/μm, IOFF of 6 × 10-12 A/μm, average subthreshold swing of (SS) 19.83 mV/decade from 0 V high-k dielectric close to the source and low-k dielectric in the vicinity of drain. The gate dielectric engineering shows characteristic enhancement in compare to SUTFET with single gate dielectric material. The strong coupling between the gate and transistor channel near the source results in reduced potential barrier width in tunnel junction, which leads to higher ION and lower subthreshold swing. Moreover, the presence of low-k dielectric near the drain reduces ambipolar current by increasing potential barrier height. This improved SUTFET characteristics makes it suitable for the usage in digital circuits due to reduced ambipolar response.

  1. Optimization of silver-dielectric-silver nanoshell for sensing applications

    Science.gov (United States)

    Shirzaditabar, Farzad; Saliminasab, Maryam

    2013-08-01

    In this paper, resonance light scattering (RLS) properties of a silver-dielectric-silver nanoshell, based on quasi-static approach and plasmon hybridization theory, are investigated. Scattering spectrum of silver-dielectric-silver nanoshell has two intense and clearly separated RLS peaks and provides a potential for biosensing based on surface plasmon resonance and surface-enhanced Raman scattering. The two RLS peaks in silver-dielectric-silver nanoshell are optimized by tuning the geometrical dimensions. In addition, the optimal geometry is discussed to obtain the high sensitivity of silver-dielectric-silver nanoshell. As the silver core radius increases, the sensitivity of silver-dielectric-silver nanoshell decreases whereas increasing the middle dielectric thickness increases the sensitivity of silver-dielectric-silver nanoshell.

  2. Optimization of silver-dielectric-silver nanoshell for sensing applications

    Energy Technology Data Exchange (ETDEWEB)

    Shirzaditabar, Farzad; Saliminasab, Maryam [Department of Physics, Razi University, Kermanshah 67144-15111 (Iran, Islamic Republic of)

    2013-08-15

    In this paper, resonance light scattering (RLS) properties of a silver-dielectric-silver nanoshell, based on quasi-static approach and plasmon hybridization theory, are investigated. Scattering spectrum of silver-dielectric-silver nanoshell has two intense and clearly separated RLS peaks and provides a potential for biosensing based on surface plasmon resonance and surface-enhanced Raman scattering. The two RLS peaks in silver-dielectric-silver nanoshell are optimized by tuning the geometrical dimensions. In addition, the optimal geometry is discussed to obtain the high sensitivity of silver-dielectric-silver nanoshell. As the silver core radius increases, the sensitivity of silver-dielectric-silver nanoshell decreases whereas increasing the middle dielectric thickness increases the sensitivity of silver-dielectric-silver nanoshell.

  3. Experimental Investigation of Separation Control on a NACA0024 Airfoil using Stationary and Non-Stationary AC-Dielectric Barrier Discharge Plasma Actuator

    Directory of Open Access Journals (Sweden)

    Hossein Parishani

    2016-01-01

    Full Text Available An experimental study of stationary and non-stationary dielectric barrier discharge (DBD plasma actuator is presented to control the flow around a NACA0024 airfoil. First, an induced air velocity of ~5 m/s is generated on a flat plate in still air using an AC-DBD actuator to find the optimal setup of the actuator (voltage, frequency, electrode width and gap size. Using the same actuator in the optimal position/setup on a NACA0024 airfoil at Reynolds number of 0.48×106, we are able to increase the stall angle of the airfoil to 18º, compared to 16º in no-actuator state. Furthermore, during the plasma actuation, the lift is increased by up to 5%. We show that non-stationary actuation, while yielding a performance similar to stationary actuation, leads to a considerable reduction of ~51% in plasma power consumption.

  4. Contemporary dielectric materials

    CERN Document Server

    Saravanan, R

    2016-01-01

    This book deals with experimental results of the physical characterization of several important, dielectric materials of great current interest. The experimental tools used for the analysis of these materials include X-ray diffraction, dielectric measurements, magnetic measurements using a vibrating sample magnetometer, optical measurements using a UV-Visible spectrometer etc.

  5. Dielectric material for dosimeters

    Energy Technology Data Exchange (ETDEWEB)

    Moran, P.R.; Podgorsak, E.; Fullerton, G.D.; Fuller, G.E.

    1976-01-27

    A RITAD dosimeter is described having a dielectric material such as sapphire wherein the efficiency as measured by mean drift distance and trapping efficiency is increased by making use of a dielectric material in which the total active impurity does not exceed 50 ppm and in which any one active impurity does not exceed 10 ppm.

  6. Light in complex dielectrics

    NARCIS (Netherlands)

    Schuurmans, F.J.P.

    1999-01-01

    In this thesis the properties of light in complex dielectrics are described, with the two general topics of "modification of spontaneous emission" and "Anderson localization of light". The first part focuses on the spontaneous emission rate of an excited atom in a dielectric host with variable refra

  7. Ammonia prevents glutamate-induced but not low K(+)-induced apoptosis in cerebellar neurons in culture.

    Science.gov (United States)

    Llansola, M; Boscá, L; Felipo, V; Hortelano, S

    2003-01-01

    Cultured rat cerebellar granule neurons are widely used as a model system for studying neuronal apoptosis. Either low K(+) (5 mM) or low concentrations of glutamate (1-10 microM) induce apoptosis in cerebellar neurons in culture. However, the molecular mechanism(s) involved remain unclear. We show that long-term treatment with ammonia prevents glutamate-induced but not low K(+)-induced apoptosis in cerebellar neurons, as assessed by measuring DNA fragmentation and activation of caspase 3. Ammonia prevented glutamate-induced increase of intracellular calcium, depolarization of the inner mitochondrial membrane, release of cytochrome c to the cytosol, activation of caspase 3 and fragmentation of DNA. However, ammonia did not prevent low K(+)-induced activation of caspase 3 and fragmentation of DNA. These results indicate that the initial steps involved in the induction of apoptosis by low K(+) or by glutamate are different and that ammonia prevents glutamate-induced apoptosis by reducing glutamate-induced rise of intracellular Ca(2+), thus avoiding the activation of subsequent events of the apoptotic process.

  8. Young's modulus determination of low-k porous films by wide-band DCC/LD LSAW

    Institute of Scientific and Technical Information of China (English)

    Bai Maosen; Fu Xing; Dante Dorantes; Jin Baoyin; Hu Xiaotang

    2011-01-01

    Low-k interconnection is one of the key concepts in the development of high-speed ultra-large-scale integrated (ULSI) circuits.To determine the Young's modulus of ultra thin,low hardness and fragile low-k porous films more accurately,a wideband differential confocal configured laser detected and laser-generated surface acoustic wave (DCC/LD LSAW) detection system is developed.Based on the light deflection sensitivity detection principle,with a novel differential confocal configuration,this DCC/LD LSAW system extends the traditional laser generated surface acoustic wave (LSAW) detection system's working frequency band,making the detected SAW signals less affected by the hard substrate and providing more information about the thin porous low-k film under test.Thus it has the ability to obtain more accurate measurement results.Its detecting principle is explained and a sample of porous silica film on Si (100) is tested.A procedure of fitting an experimental SAW dispersion curve with theoretical dispersion curves was carried out in the high frequency band newly achieved by the DCC/LD LSAW system.A comparison of the measurement results of the DCC/LD LSAW with those from the traditional LSAW shows that this newly developed DCC/LD LSAW can dramatically improve the Young's modulus measuring accuracy of such porous low-k films.

  9. Electrical and dielectric behaviour of Na0.5La0.25Sm0.25Cu3Ti4O12 ceramics investigated by impedance and modulus spectroscopy

    Directory of Open Access Journals (Sweden)

    A.K. Thomas

    2017-03-01

    Full Text Available Polycrystalline samples of Na0.5La0.25Sm0.25Cu3Ti4O12 ceramics were prepared by solid state sintering. Its crystallographic structure, electrical properties and dielectric behaviour are investigated over wide ranges of temperature (30–325 °C and frequency (42 Hz–1 MHz. Rietveld refinement of the powder diffraction data has confirmed a cubic, single phase structure with space group Im3. This ceramic material exhibits colossal value of dielectric constant with very low values of loss factor, over wide frequency ranges and thus highlights the quality of the sample to be used for the fabrication of capacitive devices. Impedance spectroscopic studies have revealed that the compound is electrically heterogeneous. The scaling behaviour of Z″ suggests a temperature independent distribution of relaxation time. The mismatch in the peak frequencies of Z″/Zmax″ and M″/Mmax″ suggest that the relaxation mechanism is dominated by short range movement of charge carriers.

  10. Investigation of Dielectric Response Characteristics of Transformer Oil-Paper Insulation Dielectric Spectroscopy of Acceleratedly Thermal Aging%变压器油纸绝缘的介电响应特性研究一加速热老化的介电谱

    Institute of Scientific and Technical Information of China (English)

    魏建林; 王世强; 彭华东; 董明; 张冠军; 冯玉昌; 于峥

    2012-01-01

    为了研究变压器油纸绝缘老化的介电响应特征量,本文对油纸绝缘试品进行了加速热老化,并在老化的不同阶段开展了相同试验温度下的极化、去极化电流(PDC)和频域谱(FDS)试验。在PDC试验数据的基础上,引入时域介电谱理论,提取其峰值和峰值时间常数作为老化特征量,研究了该特征量与绝缘老化的关系。结果表明,绝缘老化使PDC试验的极化及去极化电流曲线均明显上移,FDS试验的复电容实部和虚部曲线在低频段均向右上平移,时域介电谱曲线则向左上方平移,这是由于老化弓I起水分、有机酸等含量的增加以及对纤维素结构的破坏,提高了油纸绝缘间夹层介质界面极化的强度和响应速度而造成的。在本文的试验条件下,油纸绝缘的时域介电谱对其老化反应灵敏,可定量反映油纸绝缘老化程度的变化情况,其峰值和峰值时间常数可考虑用作表征油纸绝缘老化程度的特征量。%For achieving the characteristic parameters ot dielectric response pnenomena o~ transformer oil-paper insulation aging, the oil-impregnated pressboard samples were acceleratedly thermally aged. The dielectric response tests, including polarization and depolarization current (PDC) and frequency domain spectroscopy (FDS), were performed on the samples with different aging degree at the same temperature. The time-domain dielectric spectroscopy theory was introduced to investigate the aging characteristic parameters of dielectric response based on the PDC data. The results reveal that, with sample aging, its polarization and depolarization currents shift upwards to higher value, the real and imaginary capacitance and dissipation factor shift upwards and rightwards at lower frequencies, and the time-domain dielectric spectroscopy shifts upwards and leftwards. It is considered that aging process induces the increment of water and organic

  11. Structure and performance of dielectric films based on self-assembled nanocrystals with a high dielectric constant.

    Science.gov (United States)

    Huang, Limin; Liu, Shuangyi; Van Tassell, Barry J; Liu, Xiaohua; Byro, Andrew; Zhang, Henan; Leland, Eli S; Akins, Daniel L; Steingart, Daniel A; Li, Jackie; O'Brien, Stephen

    2013-10-18

    Self-assembled films built from nanoparticles with a high dielectric constant are attractive as a foundation for new dielectric media with increased efficiency and range of operation, due to the ability to exploit nanofabrication techniques and emergent electrical properties originating from the nanoscale. However, because the building block is a discrete one-dimensional unit, it becomes a challenge to capture potential enhancements in dielectric performance in two or three dimensions, frequently due to surface effects or the presence of discontinuities. This is a recurring theme in nanoparticle film technology when applied to the realm of thin film semiconductor and device electronics. We present the use of chemically synthesized (Ba,Sr)TiO3 nanocrystals, and a novel deposition-polymerization technique, as a means to fabricate the dielectric layer. The effective dielectric constant of the film is tunable according to nanoparticle size, and effective film dielectric constants of up to 34 are enabled. Wide area and multilayer dielectrics of up to 8 cm(2) and 190 nF are reported, for which the building block is an 8 nm nanocrystal. We describe models for assessing dielectric performance, and distinct methods for improving the dielectric constant of a nanocrystal thin film. The approach relies on evaporatively driven assembly of perovskite nanocrystals with uniform size distributions in a tunable 7-30 nm size range, coupled with the use of low molecular weight monomer/polymer precursor chemistry that can infiltrate the porous nanocrystal thin film network post assembly. The intercrystal void space (low k dielectric volume fraction) is minimized, while simultaneously promoting intercrystal connectivity and maximizing volume fraction of the high k dielectric component. Furfuryl alcohol, which has good affinity to the surface of (Ba,Sr)TiO3 nanocrystals and miscibility with a range of solvents, is demonstrated to be ideal for the production of nanocomposites. The

  12. Suppression of Cu Oxidation Using Environmentally Friendly Inhibitors under Conditions of High Temperature and High Humidity for Cu/Low-k

    Science.gov (United States)

    Hara, Makoto; Watanabe, Daisuke; Kimura, Chiharu; Aoki, Hidemitsu; Sugino, Takashi

    2009-04-01

    The Cu surface at a via bottom is exposed to conditions of high temperature and high humidity during annealing after the via hole for Cu/low-k interconnection is cleaned. The Cu surface is oxidized by the water desorbed from the low-k film. The suppression of Cu corrosion is a necessary process. Benzotriazole (BTA) has been used as a conventional Cu corrosion inhibitor, but it has a large environmental impact. An environmentally friendly inhibitor to replace BTA is required. In this study, adenine and hypoxanthine are used as environmentally friendly Cu corrosion inhibitors. We have succeeded in effectively suppressing Cu corrosion under conditions of high temperature and high humidity using adenine and hypoxanthine. We have also investigated the desorption temperature of Cu corrosion inhibitor films by thermal desorption spectroscopy (TDS). We have found that adenine and hypoxanthine are stable inhibitors during annealing. Moreover, it is clear from impedance measurements that adenine and hypoxanthine inhibitor films are thinner than BTA films. Adenine and hypoxanthine can readily be applied to next-generation LSI devices.

  13. Investigation and control of the {{\\rm{O}}}_{3}- to {NO}-transition in a novel sub-atmospheric pressure dielectric barrier discharge

    Science.gov (United States)

    Bansemer, Robert; Schmidt-Bleker, Ansgar; van Rienen, Ursula; Weltmann, Klaus-Dieter

    2017-06-01

    A novel flow-driven dielectric barrier discharge concept is presented, which uses a Venturi pump to transfer plasma-generated reactive oxygen and nitrogen species from a sub-atmospheric pressure (200{--}600 {mbar}) discharge region to ambient pressure and can be operated with air. By adjusting the working pressure of the device, the plasma chemistry can be tuned continuously from an ozone ({{{O}}}3)-dominated mode to a nitrogen oxides ({{NO}}x)-only mode. The plasma source is characterized focusing on the mechanisms effecting this mode change. The composition of the device’s output gas was determined using Fourier-transform infrared spectroscopy. The results are correlated to measurements of discharge chamber pressure and temperature as well as of input power. It is found that the mode-change temperature can be controlled by the discharge chamber pressure. The source concept is capable of generating an {{NO}}x-dominated plasma chemistry at gas temperatures distinctly below 400 {{K}}. Through mixing of the processed gas stream with a second flow of pressurized air required for the operation of the Venturi pump, the resulting product gas stream remains close to room temperature. A reduced zero-dimensional reaction kinetics model with only seven reactions is capable of describing the observed pressure- and temperature-dependence of the {{{O}}}3 to {{NO}}x mode-change.

  14. Investigations on the growth, optical, thermal, dielectric, and laser damage threshold properties of crystal violet dye-doped potassium acid phthalate single crystal

    Science.gov (United States)

    Rao, G. Babu; Rajesh, P.; Ramasamy, P.

    2016-03-01

    Influence of crystal violet dye with different concentration on potassium acid phthalate single crystal grown by conventional method has been studied. No change has been observed in the structure, whereas changes have been observed in the external morphology of the crystal when the dyes are incorporated in the crystal lattice. Thermogravimetric and differential thermal analyses show the onset decomposition temperatures to be at 302, 285, 284, and 285 °C for pure, 0.1, 0.3, and 0.5 mol% crystal violet-doped potassium acid phthalate crystals, respectively. The dielectric measurement was carried out on the grown crystals as a function of frequency at various temperatures. In addition, strong luminescent emission bands at 638, 648, and 640 nm were observed in which the relative intensity was found to be reversed as a result of doping concentration. The laser damage threshold value significantly increased for dye-doped crystal in comparison with pure crystal which may make it suitable for the solid-state dye laser applications.

  15. Frequency-dependent dielectric response model for polyimide-poly(vinilydenefluoride) multilayered dielectrics

    Science.gov (United States)

    Di Lillo, Luigi; Bergamini, Andrea; Albino Carnelli, Dario; Ermanni, Paolo

    2012-07-01

    A physical model for the frequency-dependent dielectric response of multilayered structures is reported. Two frequency regimes defined by the relative permittivities and volume resistivities of the layers have been analytically identified and experimentally investigated on a structure consisting of polyimide and poly(vinilydenefluoride) layers. The relative permittivity follows an effective medium model at high frequency while showing a dependence on the volume resistivity at low frequency. In this regime, relative permittivities exceeding those expected from effective medium model are recorded. These findings provide insights into inhomogeneous dielectrics behavior for the development of high energy density dielectric films.

  16. Circular and linear dichroism of periodical helical media with large dielectric anisotropy

    CERN Document Server

    Arakelian, H M; Eritsyan, H S

    2000-01-01

    The interaction of light with a layer of periodical helical media is considered. Features of circular and linear dichroism at large dielectric anisotropy are studied. Influence of dielectric boundaries on circular and linear dichroism is investigated.

  17. Study of Some Dielectric Properties of Suspensions of Magnesium Particles in Mineral Oil

    Science.gov (United States)

    Altshuller, Aubrey P

    1954-01-01

    The variation of dielectric constant has been measured as a function of the concentration of magnesium particles; the shape, size, and degree of oxidation of the particles; the temperature; and the frequency of oscillation. The variation of dielectric constant and settling rate was investigated as a function of time. Also investigated were the effects of particle concentration, shape and time on dielectric losses.

  18. Investigation on microwave dielectric properties and microstructures of (1−x) LaAlO{sub 3}-xCa{sub 0.2}Sr{sub 0.8}TiO{sub 3} ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Liangzhu, E-mail: huixinglin@mail.sic.ac.cn [Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 215 Chengbei Road, Jiading, Shanghai 201800 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Lin, Huixing; Zhao, XiangYu; Yao, Xiaogang; Jiang, Shaohu; He, Fei; Li, Botao; Luo, Lan [Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 215 Chengbei Road, Jiading, Shanghai 201800 (China)

    2015-11-15

    The structural, microstructural and microwave dielectric properties of (1−x) LaAlO{sub 3}-xCa{sub 0.2}Sr{sub 0.8}TiO{sub 3} ceramics prepared by the conventional solid state ceramic route have been investigated. The formation of solid solutions (1−x) LaAlO{sub 3}-xCa{sub 0.2}Sr{sub 0.8}TiO{sub 3} was confirmed by the X-ray diffraction patterns and the EDS analysis. The lattice parameter, average grain size and dielectric constant (ε{sub r}) increase with increasing amount of Ca{sub 0.2}Sr{sub 0.8}TiO{sub 3} whereas the quality factor (Q × f) decreases. The increasing temperature coefficient of resonant frequency (τ{sub f}) caused by the decreasing tolerance factor with x ranging from 0.3 to 0.7. The τ{sub f} can be tuned near zero at x = 0.5. Specimen with the composition of 0.5LaAlO{sub 3}–0.5Ca{sub 0.2}Sr{sub 0.8}TiO{sub 3} possesses an excellent combination of microwave dielectric properties: ε{sub r} ∼ 32.7, Q × f ∼ 33400 GHz, τ{sub f} ∼ −2.5 ppm/°C. - Highlights: • A novel (1−x) LaAlO{sub 3}-xCa{sub 0.2}Sr{sub 0.8}TiO{sub 3} microwave ceramics were investigated. • The ceramics formed a solid solution confirmed by XRD and EDS. • When x increases, the ceramics Q × f·τ{sub f} decrease, while ε{sub r} increased nonlinearly. • 0.5LaAlO{sub 3}–0.5Ca{sub 0.2}Sr{sub 0.8}TiO{sub 3}ε{sub r} ∼ 32.7, Q × f ∼ 33400 GHz, τ{sub f} ∼ −2.5 ppm/°C.

  19. Dielectric materials for electrical engineering

    CERN Document Server

    Martinez-Vega, Juan

    2013-01-01

    Part 1 is particularly concerned with physical properties, electrical ageing and modeling with topics such as the physics of charged dielectric materials, conduction mechanisms, dielectric relaxation, space charge, electric ageing and life end models and dielectric experimental characterization. Part 2 concerns some applications specific to dielectric materials: insulating oils for transformers, electrorheological fluids, electrolytic capacitors, ionic membranes, photovoltaic conversion, dielectric thermal control coatings for geostationary satellites, plastics recycling and piezoelectric poly

  20. Hot plasma dielectric tensor

    NARCIS (Netherlands)

    Westerhof, E.

    1996-01-01

    The hot plasma dielectric tensor is discussed in its various approximations. Collisionless cyclotron resonant damping and ion/electron Bernstein waves are discussed to exemplify the significance of a kinetic description of plasma waves.

  1. Characterization of process-induced damage in Cu/low-k interconnect structure by microscopic infrared spectroscopy with polarized infrared light

    Science.gov (United States)

    Seki, Hirofumi; Hashimoto, Hideki; Ozaki, Yukihiro

    2016-09-01

    Microscopic Fourier-transform infrared (FT-IR) spectra are measured for a Cu/low-k interconnect structure using polarized IR light for different widths of low-k spaces and Cu lines, and for different heights of Cu lines, on Si substrates. Although the widths of the Cu line and the low-k space are 70 nm each, considerably smaller than the wavelength of the IR light, the FT-IR spectra of the low-k film were obtained for the Cu/low-k interconnect structure. A suitable method was established for measuring the process-induced damage in a low-k film that was not detected by the TEM-EELS (Transmission Electron Microscope-Electron Energy-Loss Spectroscopy) using microscopic IR polarized light. Based on the IR results, it was presumed that the FT-IR spectra mainly reflect the structural changes in the sidewalls of the low-k films for Cu/low-k interconnect structures, and the mechanism of generating process-induced damage involves the generation of Si-OH groups in the low-k film when the Si-CH3 bonds break during the fabrication processes. The Si-OH groups attract moisture and the OH peak intensity increases. It was concluded that the increase in the OH groups in the low-k film is a sensitive indicator of low-k damage. We achieved the characterization of the process-induced damage that was not detected by the TEM-EELS and speculated that the proposed method is applicable to interconnects with line and space widths of 70 nm/70 nm and on shorter scales of leading edge devices. The location of process-induced damage and its mechanism for the Cu/low-k interconnect structure were revealed via the measurement method.

  2. Dielectric properties of Ni substituted Li-Zn ferrites

    Energy Technology Data Exchange (ETDEWEB)

    Soibam, Ibetombi, E-mail: ibetombi_phys@rediffmail.co [Department of Physics, Manipur University, Canchipur, Manipur 795 003 (India); Phanjoubam, Sumitra [Department of Physics, Manipur University, Canchipur, Manipur 795 003 (India); Radhapiyari, L. [Solid State Physics Laboratory, Lucknow Road, New Delhi 110 054 (India)

    2010-05-01

    Li{sub 0.4-0.5x}Zn{sub 0.2}Ni{sub x} Fe{sub 2.4-0.5x}O{sub 4} ferrites with x varying from 0.02 to 0.1 in steps of 0.02 have been synthesized by the citrate precursor method and investigated for their dielectric properties. A decrease in the value of room temperature dielectric constant is observed with the increase in Ni concentration. It has been explained in terms of space charge polarization and Koop's two layer model. The variation in dielectric constant with frequency shows dispersion while a resonance peak could be seen in the variation of dielectric loss with frequency. With increase in temperature the dielectric constant and dielectric loss increased, which have been discussed in terms of polarization and the Debye-type of dispersion. Possible mechanism contributing to the above process is discussed.

  3. Dielectric spectroscopy in agrophysics

    Science.gov (United States)

    Skierucha, W.; Wilczek, A.; Szypłowska, A.

    2012-04-01

    The paper presents scientific foundation and some examples of agrophysical applications of dielectric spectroscopy techniques. The aim of agrophysics is to apply physical methods and techniques for studies of materials and processes which occur in agriculture. Dielectric spectroscopy, which describes the dielectric properties of a sample as a function of frequency, may be successfully used for examinations of properties of various materials. Possible test materials may include agrophysical objects such as soil, fruit, vegetables, intermediate and final products of the food industry, grain, oils, etc. Dielectric spectroscopy techniques enable non-destructive and non-invasive measurements of the agricultural materials, therefore providing tools for rapid evaluation of their water content and quality. There is a limited number of research in the field of dielectric spectroscopy of agricultural objects, which is caused by the relatively high cost of the respective measurement equipment. With the fast development of modern technology, especially in high frequency applications, dielectric spectroscopy has great potential of expansion in agrophysics, both in cognitive and utilitarian aspects.

  4. Dielectric optical invisibility cloaks

    Science.gov (United States)

    Blair, J.; Tamma, V. A.; Park, W.; Summers, C. J.

    2010-08-01

    Recently, metamaterial cloaks for the microwave frequency range have been designed using transformative optics design techniques and experimentally demonstrated. The design of these structures requires extreme values of permittivity and permeability within the device, which has been accomplished by the use of resonating metal elements. However, these elements severely limit the operating frequency range of the cloak due to their non-ideal dispersion properties at optical frequencies. In this paper we present designs to implement a simpler demonstration of cloaking, the carpet cloak, in which a curved reflective surface is compressed into a flat reflective surface, effectively shielding objects behind the curve from view with respect to the incoming radiation source. This approach eliminates the need for metallic resonant elements. These structures can now be fabricated using only high index dielectric materials by the use of electron beam lithography and standard cleanroom technologies. The design method, simulation analysis, device fabrication, and near field optical microscopy (NSOM) characterization results are presented for devices designed to operate in the 1400-1600nm wavelength range. Improvements to device performance by the deposition/infiltration of linear, and potentially non-linear optical materials, were investigated.

  5. Surface-Localized Sealing of Porous Ultralow-k Dielectric Films with Ultrathin (<2 nm) Polymer Coating.

    Science.gov (United States)

    Yoon, Seong Jun; Pak, Kwanyong; Nam, Taewook; Yoon, Alexander; Kim, Hyungjun; Im, Sung Gap; Cho, Byung Jin

    2017-08-22

    Semiconductor integrated circuit chip industries have been striving to introduce porous ultralow-k (ULK) dielectrics into the multilevel interconnection process in order to improve their chip operation speed by reducing capacitance along the signal path. To date, however, highly porous ULK dielectrics (porosity >40%, dielectric constant (k) <2.4) have not been successfully adopted in real devices because the porous nature causes many serious problems, including noncontinuous barrier deposition, penetration of the barrier metal, and reliability issues. Here, a method that allows porous ULK dielectrics to be successfully used with a multilevel interconnection scheme is presented. The surface of the porous ULK dielectric film (k = 2.0, porosity ∼47%) could be completely sealed by a thin (<2 nm) polymer deposited by a multistep initiated chemical vapor deposition (iCVD) process. Using the iCVD process, a thin pore-sealing layer was localized only to the surface of the porous ULK dielectric film, which could minimize the increase of k; the final effective k was less than 2.2, and the penetration of metal barrier precursors into the dielectric film was completely blocked. The pore-sealed ULK dielectric film also exhibited excellent long-term reliability comparable to a dense low-k dielectric film.

  6. A single dielectric nanolaser

    Science.gov (United States)

    Huang, Tsung-Yu; Yen, Ta-Jen

    2016-09-01

    To conquer Ohmic losses from metal and enhance pump absorption efficiency of a nanolaser based on surface plasmon polariton, we theoretically calculate the first magnetic and electric scattering coefficient of a dielectric sphere under a plane wave excitation with a dielectric constant of around 12. From this calculation, we could retrieve both negative effective permittivity and permeability of the sphere simultaneously at frequencies around 153 THz in the aids of Lewin's theory and the power distribution clearly demonstrate the expected negative Goos-Hänchen effect, which usually occurred in a negative refractive waveguide, thus creating two energy vortices to trap incident energy and then promoting the pump absorption efficiency. Meanwhile, a magnetic lasing mode at 167.3 THz is demonstrated and reveals a magnetic dipole resonance mode and a circulating energy flow within the dielectric sphere, providing a possible stopped light feedback mechanism to enable the all-dielectric nanolaser. More importantly, the corresponding mode volume is reduced to 0.01λ3 and a gain threshold of 5.1×103 is obtained. To validate our design of all-dielectric nanolaser, we employ finite-difference-time-domain simulation software to examine the behavior of the nanolaser. From simulation, we could obtain a pinned-down population inversion of 0.001 and a lasing peak at around 166.5 THz, which is very consistent with the prediction of Mie theory. Finally, according to Mie theory, we can regard the all-dielectric nanolaser as the excitation of material polariton and thus could make an analogue between lasing modes of the dielectric and metallic nanoparticles.

  7. Dielectric properties of conductive ionomers

    Science.gov (United States)

    Klein, Robert James

    Ion and polymer dynamics of ion-containing polymers were investigated, with the majority of results obtained from application of a physical model of electrode polarization (EP) to dielectric spectroscopy data. The physical model of MacDonald, further developed by Coelho, was extended for application to tan delta (the ratio of dielectric loss to dielectric constant) as a function of frequency. The validity of this approach was confirmed by plotting the characteristic EP time as a function of thickness and comparing the actual and predicted unrelaxed dielectric constant for a poly(ethylene oxide) (PEO)-based ionomer neutralized by lithium, sodium, and cesium. Results were obtained for ion mobility and mobile ion concentration for a neat PEO-based ionomer, two (methoxyethoxy-ethoxy phosphazene) (MEEP) -based ionomers, two MEEP-based salt-doped polymers, sulfonated polystyrene (SPS) neutralized by sodium with a high sulfonation fraction, and SPS neutralized by zinc with a low sulfonation fraction. Additionally, the conductivity parameters of six plasticized forms of a neat PEO-based ionomer were characterized, but the method apparently failed to correctly evaluate bulk ionic behavior. In all cases except the SPS ionomers ion mobility follows a Vogel-Fulcher-Tammann (VFT) temperature dependence. In all cases, mobile ion concentration follows an Arrhenius temperature dependence. Fitting parameters from these two relationships yielded direct information about the state of ionic diffusion and ion pairing in each system. Combination of these two functionalities predicts a relationship for conductivity that is significantly different than the VFT relation typically used in the literature to fit conductivity. The most outstanding result was the extremely small fraction of ions found to be mobile. For ionomers it can be concluded that the primary reason for low conductivities arises from the low fraction of mobile ions. The local and segmental dynamics of the neat and

  8. Pyroelectric and dielectric properties of ferroelectric films with interposed dielectric buffer layers

    Science.gov (United States)

    Espinal, Y.; Kesim, M. T.; Misirlioglu, I. B.; Trolier-McKinstry, S.; Mantese, J. V.; Alpay, S. P.

    2014-12-01

    The dielectric and pyroelectric properties of c-domain ferroelectric films with linear dielectric buffer layers were investigated theoretically. Computations were carried out for multilayers consisting of PbZr0.2Ti0.8O3 with Al2O3, SiO2, Si3N4, HfO2, and TiO2 buffers on metalized Si. It is shown that the dielectric and pyroelectric properties of such multilayers can be increased by the presence of the buffer compared to ferroelectric monolayers. Calculations for PbZr0.2Ti0.8O3 films with 1% Al2O3 interposed between electrodes on Si show that the dielectric and pyroelectric coefficients are 310 and 0.070 μC cm-2 °C-1, respectively. Both values are higher than the intrinsic response of PbZr0.2Ti0.8O3 monolayer on Si.

  9. Effect of the Dielectric Inhomogeneity Factor's Range on the Electrical Tree Evolution in Solid Dielectrics

    Directory of Open Access Journals (Sweden)

    Hemza Medoukali

    2016-01-01

    Full Text Available The main contribution of the presented paper is to investigate the influence of the Dielectric Inhomogeneity Factor on the electrical tree evolution in solid dielectrics using cellular automata. We have a sample of the XLPE which is located between needle-to-plane electrodes under DC voltage. The electrical tree emanates from the end of the needle in which the electric stress attains a dielectric strength of the material. At every time step, Laplace's equation is solved to calculate the potential distribution which changes according to electrical tree development. Dynamic simulations clearly demonstrate the influence of the range of the Dielectric Inhomogeneity Factor on the electrical tree growth. Simulation results confirm the published technical literature.

  10. Thickness and dielectric constant determination of thin dielectric layers

    NARCIS (Netherlands)

    Bruijn, de Helene E.; Minor, Marcel; Kooyman, Rob P.H.; Greve, Jan

    1993-01-01

    We derive a method for the determination of the dielectric constant and thickness of a thin dielectric layer, deposited on top of a thick dielectric layer which is in turn present on a metal film. Reflection of p- and s-polarized light from the metal layer yields minima for certain angles of inciden

  11. Temperature- and Time-Dependent Dielectric Measurements and Modelling on Curing of Polymer Composites

    OpenAIRE

    Prastiyanto, Dhidik

    2016-01-01

    In this work a test set for dielectric measurements at 2.45 GHz during curing of polymer composites is developed. Fast reconstruction of dielectric properties is solved using a neural network algorithm. Modelling of the curing process at 2.45 GHz using both dielectric constant and dielectric loss factor results in a more accurate model compared to low frequency modeling that only uses the loss factor. Effects of various harderners and different amount of filler are investigated.

  12. Controlling birefringence in dielectrics

    Science.gov (United States)

    Danner, Aaron J.; Tyc, Tomáš; Leonhardt, Ulf

    2011-06-01

    Birefringence, from the very essence of the word itself, refers to the splitting of light rays into two parts. In natural birefringent materials, this splitting is a beautiful phenomenon, resulting in the perception of a double image. In optical metamaterials, birefringence is often an unwanted side effect of forcing a device designed through transformation optics to operate in dielectrics. One polarization is usually implemented in dielectrics, and the other is sacrificed. Here we show, with techniques beyond transformation optics, that this need not be the case, that both polarizations can be controlled to perform useful tasks in dielectrics, and that rays, at all incident angles, can even follow different trajectories through a device and emerge together as if the birefringence did not exist at all. A number of examples are shown, including a combination Maxwell fisheye/Luneburg lens that performs a useful task and is achievable with current fabrication materials.

  13. Dielectric assist accelerating structure

    Science.gov (United States)

    Satoh, D.; Yoshida, M.; Hayashizaki, N.

    2016-01-01

    A higher-order TM02 n mode accelerating structure is proposed based on a novel concept of dielectric loaded rf cavities. This accelerating structure consists of ultralow-loss dielectric cylinders and disks with irises which are periodically arranged in a metallic enclosure. Unlike conventional dielectric loaded accelerating structures, most of the rf power is stored in the vacuum space near the beam axis, leading to a significant reduction of the wall loss, much lower than that of conventional normal-conducting linac structures. This allows us to realize an extremely high quality factor and a very high shunt impedance at room temperature. A simulation of a 5 cell prototype design with an existing alumina ceramic indicates an unloaded quality factor of the accelerating mode over 120 000 and a shunt impedance exceeding 650 M Ω /m at room temperature.

  14. Dielectrically Loaded Biconical Antennas

    Science.gov (United States)

    Nusseibeh, Fouad Ahmed

    1995-01-01

    Biconical antennas are of great interest to those who deal with broadband applications including the transmission/reception of pulses. In particular, wide-angle conical antennas are an attractive choice in many applications including Electronic Support Measures (ESM) and the measurements of transient surface currents and charge densities on aircraft. Dielectric loading in the interior region of a conical antenna can be used to reduce the size of the antenna especially at low frequencies and/or for structural strength. Therefore, having an analytical solution for the input impedance and the frequency response is very helpful in optimizing the design and understanding the behavior of the antenna. From the quasi-analytical solution for the input impedance and the electric field of a wide-angle conical antenna, it can be seen that the dielectric loading in the antenna region improves the input impedance at low frequencies, but increases the number of resonance points and the magnitude of these peaks. When an inhomogeneous dielectric load is used, the magnitude of the resonance peaks is decreased (depending on the way the load is distributed), improving the input impedance of the antenna significantly. Introducing a dielectric load in the interior region of an electrically short receiving cone makes the antenna behave as an electrically longer antenna. However, this is not true for the case for electrical1y long antennas. For the case of pulse transmission, the dielectric load affects only the amplitude. Of course, if the dielectric fills the whole space, both transmitting and receiving antennas behave as electrically longer antennas.

  15. Absorption in dielectric models

    CERN Document Server

    Churchill, R J

    2015-01-01

    We develop a classical microscopic model of a dielectric. The model features nonlinear interaction terms between polarizable dipoles and lattice vibrations. The lattice vibrations are found to act as a pseudo-reservoir, giving broadband absorption of electromagnetic radiation without the addition of damping terms in the dynamics. The effective permittivity is calculated using a perturbative iteration method and is found to have the form associated with real dielectrics. Spatial dispersion is naturally included in the model and we also calculate the wavevector dependence of the permittivity.

  16. Optics of dielectric microstructures

    DEFF Research Database (Denmark)

    Søndergaard, Thomas

    2002-01-01

    microstructures, will be presented in the part I of this thesis consisting of the chapters 2-5. An introductions is given in chapter 2. In part I three methods are presented for calculating spontaneous and classical emission from sources in dielectric microstructures. The first method presented in chapter 3...... near fields and far fields generated by a dipole emitter in finite-sized dielectric disks. A collection of results obtained within the second topic, planar photonic crystal waveguides, are presented in part II of this thesis consisting of the chapters 6-10. Chapter 6 contains a further introduction...

  17. Thermally switchable dielectrics

    Science.gov (United States)

    Dirk, Shawn M.; Johnson, Ross S.

    2013-04-30

    Precursor polymers to conjugated polymers, such as poly(phenylene vinylene), poly(poly(thiophene vinylene), poly(aniline vinylene), and poly(pyrrole vinylene), can be used as thermally switchable capacitor dielectrics that fail at a specific temperature due to the non-conjugated precursor polymer irreversibly switching from an insulator to the conjugated polymer, which serves as a bleed resistor. The precursor polymer is a good dielectric until it reaches a specific temperature determined by the stability of the leaving groups. Conjugation of the polymer backbone at high temperature effectively disables the capacitor, providing a `built-in` safety mechanism for electronic devices.

  18. The Fabrication and Characterisation of Low-k Cordierite-Based Glas s-Ceramics by Tape Casting

    Institute of Scientific and Technical Information of China (English)

    José; M; F; Ferreira

    2002-01-01

    Cordierite is a promising low-k material in mi cr oelectronic and packaging industries. When it is co-fired with the metal for re alising the multilayer circuits, temperature should be low enough to prevent the melting and/or oxidising of the metal. However, this temperature is usually too low to sinter cordierite. Low melting point glass, therefore, is added to the s toichiometric cordierite to lower the sintering temperature through a liquid-si ntering process. In this research work, cordierite-based g...

  19. Direct transitions from high-K isomers to low-K bands -- {gamma} softness or coriolis coupling

    Energy Technology Data Exchange (ETDEWEB)

    Shimizu, Yoshifumi R.; Narimatsu, Kanako; Ohtsubo, Shin-Ichi [Kyushu Univ., Fukuoka (Japan)] [and others

    1996-12-31

    Recent measurements of direct transitions from high-K isomers to low-K bands reveal severe break-down of the K-selection rule and pose the problem of how to understand the mechanism of such K-violation. The authors recent systematic calculations by using a simple {gamma}-tunneling model reproduced many of the observed hindrances, indicating the importance of the {gamma} softness. However, there are some data which cannot be explained in terms of the {gamma}-degree of freedom. In this talk, the authors also discuss the results of conventional Coriolis coupling calculations, which is considered to be another important mechanism.

  20. Dielectric Response of Graded Spherical Composites

    Institute of Scientific and Technical Information of China (English)

    LI Zhi; WEI En-Bo; ZHANG Han-De; TIAN Ji-Wei

    2005-01-01

    @@ We investigate the effective dielectric responses of graded spherical composites under an external uniform electric field by taking the dielectric function of spherical inclusion, εi = crkeβr, where r is the inner distance of a point inside the particle from the centre of the spherical particle in the coordination. In the dilute limit, our exact result is used to test the validity of differential effective dipole approximation (DEDA) for estimating the effective response of graded spherical composites and it is shown that the DEDA is in excellent agreement with the exact result.

  1. Waveguide sensor with metamaterial structure for determination of dielectric properties

    Science.gov (United States)

    Steigmann, R.; Savin, A.; Isteníková, K.; Faktorová, D.; Fabo, P.

    2017-08-01

    Microwave sensor (MWS) compared with classical sensor, offers many advantage such as rapid and nondestructive measurement. At microwave (MW) frequencies, dielectric properties of materials depend on frequency, moisture content, bulk density and temperature. MW waveguide sensors can measure properties of materials based on MW interaction with matter, and provide information about dielectric properties of investigated dielectric material, characterized with complex permittivity. The paper presents a new approach for determination of the dielectric properties of dielectric material by embedding a metamaterial (MM) structure over the aperture of waveguide sensor in order to increase the sensing properties of classical waveguide sensor. The optimal design of MM structure for waveguide sensor tuning in MW X-band is obtained. In this new approach the MM function in two ways: like a tool for increasing the sensibility of classical waveguide sensor and the tool sensitive to the dielectric properties of investigated material through the adjusted resonance frequency of designed MM units. The numerical simulation of 2D MM structure properties and experimental results for dielectric properties of dielectric materials are carried out.

  2. Broadband Dielectric Spectroscopy on Human Blood

    CERN Document Server

    Wolf, M; Lunkenheimer, P; Loidl, A

    2011-01-01

    Dielectric spectra of human blood reveal a rich variety of dynamic processes. Achieving a better characterization and understanding of these processes not only is of academic interest but also of high relevance for medical applications as, e.g., the determination of absorption rates of electromagnetic radiation by the human body. The dielectric properties of human blood are studied using broadband dielectric spectroscopy, systematically investigating the dependence on temperature and hematocrit value. By covering a frequency range from 1 Hz to 40 GHz, information on all the typical dispersion regions of biological matter is obtained. We find no evidence for a low-frequency relaxation (alpha-relaxation) caused, e.g., by counterion diffusion effects as reported for some types of biological matter. The analysis of a strong Maxwell-Wagner relaxation arising from the polarization of the cell membranes in the 1-100 MHz region (beta-relaxation) allows for the test of model predictions and the determination of variou...

  3. Dielectric elastomer actuators for facial expression

    Science.gov (United States)

    Wang, Yuzhe; Zhu, Jian

    2016-04-01

    Dielectric elastomer actuators have the advantage of mimicking the salient feature of life: movements in response to stimuli. In this paper we explore application of dielectric elastomer actuators to artificial muscles. These artificial muscles can mimic natural masseter to control jaw movements, which are key components in facial expressions especially during talking and singing activities. This paper investigates optimal design of the dielectric elastomer actuator. It is found that the actuator with embedded plastic fibers can avert electromechanical instability and can greatly improve its actuation. Two actuators are then installed in a robotic skull to drive jaw movements, mimicking the masseters in a human jaw. Experiments show that the maximum vertical displacement of the robotic jaw, driven by artificial muscles, is comparable to that of the natural human jaw during speech activities. Theoretical simulations are conducted to analyze the performance of the actuator, which is quantitatively consistent with the experimental observations.

  4. Dielectric and photo-dielectric properties of TlGaSeS crystals

    Indian Academy of Sciences (India)

    A F Qasrawi; Samah F Abu-Zaid; Salam A Ghanameh; N M Gasanly

    2014-05-01

    The room temperature, dark and photo-dielectric properties of the novel crystals TlGaSeS are investigated in the frequency, intensity and biasing voltage having ranges of ~ 1–120 MHz, 14–40 klux and 0–1 V, respectively. The crystals are observed to exhibit a dark high frequency effective dielectric constant value of ∼ 10.65 × 103 with a quality factor of ∼ 8.84 × 104 at ∼ 120 MHz. The dielectric spectra showed sharp resonance–antiresonance peaks in the frequency range of ∼ 25–250 kHz. When photoexcited, pronounced increase in the dielectric constant and in the quality factor values with increasing illumination intensity are observed. Signal amplification up to ∼ 33% with improved signal quality up to ∼ 29% is attainable via photoexcitation. On the other hand, the illuminated capacitance–voltage characteristics of the crystals reflected a downward shift in the voltage biasing and in the built-in voltage of the device that is associated with increase in the uncompensated carrier density. The increase in the dielectric constant with increasing illumination intensity is ascribed to the decrease in the crystal's resistance as a result of increased free carrier density. The light sensitivity of the crystals, the improved dielectric properties and the lower biasing voltage obtained via photoexcitation and the well-enhanced signal quality factor of the crystals make them promising candidates for optical communication systems.

  5. Chains of coupled square dielectric optical microcavities

    NARCIS (Netherlands)

    Lohmeyer, Manfred

    2009-01-01

    Chains of coupled square dielectric cavities are investigated in a 2-D setting, by means of a quasi-analytical eigenmode expansion method. Resonant transfer of optical power can be achieved along quite arbitrary, moderately long rectangular paths (up to 9 coupled cavities are considered), even with

  6. Dielectric characterisation of human tissue samples

    NARCIS (Netherlands)

    Rossum, W.L. van; Nennie, F.; Deiana, D.; Veen, A.J. van der; Monni, S.

    2014-01-01

    The electrical properties of tissues samples are required for investigation and simulation purposes in biomedical applications of EM sensors. While available open literature mostly deals with ex-vivo characterization of isolated tissues, knowledge on dielectric properties of these tissues in their o

  7. Microstructural and dielectric susceptibility effects on predictions of dielectric properties

    Energy Technology Data Exchange (ETDEWEB)

    Ferris, K.F.; Exarhos, G.J. [Pacific Northwest National Lab., Richland, WA (United States); Risser, S.M. [Texas A& M Univ., Commerce, TX (United States)

    1997-12-01

    In modeling the dielectric properties of inhomogeneous materials, the treatment of the electric field interactions differentiate the usual modeling formalisms (such as the Maxwell-Garnett and Bruggeman effective medium methods) and their accuracy. In this paper, we show that the performance of effective medium methods is dependent upon a number of variables - defect concentration, alignment, and the dielectric constant of the material itself. Using our previously developed finite element model of an inhomogeneous dielectric, we have developed models for a number of dielectric films of varying dielectric constant and microstructures. Alignment of defects parallel to the applied field and the larger defect aspect ratios increase the overall dielectric constant. The extent of these effects is dependent on the dielectric constant of the bulk component.

  8. Dielectric Waveguide lasers

    NARCIS (Netherlands)

    Pollnau, Markus; Orlovic, V.A.; Pachenko, V.; Scherbakov, I.A.

    2007-01-01

    Our recent results on planar and channel waveguide fabrication and lasers in the dielectric oxide materials Ti:sapphire and rare-earth-ion-doped potassium yttrium double tungstate (KYW) are reviewed. We have employed waveguide fabrication methods such as liquid phase epitaxy and reactive ion etching

  9. Interfaces: nanometric dielectrics

    Energy Technology Data Exchange (ETDEWEB)

    Lewis, T J [School of Informatics, University of Wales Bangor, Dean Street, Bangor, Gwynedd, LL70 9PX (United Kingdom)

    2005-01-21

    The incorporation of nanometric size particles in a matrix to form dielectric composites shows promise of materials (nanodielectrics) with new and improved properties. It is argued that the properties of the interfaces between the particles and the matrix, which will themselves be of nanometric dimensions, will have an increasingly dominant role in determining dielectric performance as the particle size decreases. The forces that determine the electrical and dielectric properties of interfaces are considered, with emphasis on the way in which they might influence composite behaviour. A number of examples are given in which interfaces at the nanometric level exercise both passive and active control over dielectric, optical and conductive properties. Electromechanical properties are also considered, and it is shown that interfaces have important electrostrictive and piezoelectric characteristics. It is demonstrated that the process of poling, namely subjecting macroscopic composite materials to electrical stress and raised temperatures to create piezoelectric materials, can be explained in terms of optimizing the collective response of the nanometric interfaces involved. If the electrical and electromechanical features are coupled to the long-established electrochemical properties, interfaces represent highly versatile active elements with considerable potential in nanotechnology.

  10. Interfaces: nanometric dielectrics

    Science.gov (United States)

    Lewis, T. J.

    2005-01-01

    The incorporation of nanometric size particles in a matrix to form dielectric composites shows promise of materials (nanodielectrics) with new and improved properties. It is argued that the properties of the interfaces between the particles and the matrix, which will themselves be of nanometric dimensions, will have an increasingly dominant role in determining dielectric performance as the particle size decreases. The forces that determine the electrical and dielectric properties of interfaces are considered, with emphasis on the way in which they might influence composite behaviour. A number of examples are given in which interfaces at the nanometric level exercise both passive and active control over dielectric, optical and conductive properties. Electromechanical properties are also considered, and it is shown that interfaces have important electrostrictive and piezoelectric characteristics. It is demonstrated that the process of poling, namely subjecting macroscopic composite materials to electrical stress and raised temperatures to create piezoelectric materials, can be explained in terms of optimizing the collective response of the nanometric interfaces involved. If the electrical and electromechanical features are coupled to the long-established electrochemical properties, interfaces represent highly versatile active elements with considerable potential in nanotechnology.

  11. Calculated Optical Properties of Dielectric Shell Coated Gold Nanorods

    Institute of Scientific and Technical Information of China (English)

    CAO Min; WANG Meng; GU Ning

    2009-01-01

    @@ Optical absorption spectra of dielectric shell coated gold nanorods are simulated using the discrete dipole ap-proximation method. The influence of the aspect ratio, shell thickness, dielectric constant of the shell, and surrounding medium on the longitudinal resonance mode is investigated. It is found that the coated dielectric shell does not affect the trend in the dependence of resonance position on the aspect ratio, while it broadens the resonant line width and reduces the sensitivity of plasmon resonance in response to changes of the surrounding medium. Furthermore, the difference of dielectric constants between the shell and surrounding medium plays an important role in determining the resonance position. The screening effect of the dielectric shell tends to be less apparent for a thicker shell thickness.

  12. Experimental investigation on the characteristics of dielectric barrier discharge with a large gap width at atmospheric pressure%大气压下较大气隙宽度介质阻挡放电的实验研究

    Institute of Scientific and Technical Information of China (English)

    李雪辰; 刘润甫; 贾鹏英; 赵欢欢; 常媛媛

    2013-01-01

    A dielectric barrier discharge with a fairly large gap width is realized in atmospheric pressure argon because the critical voltage value for gas gap breakdown is sharply lowered through using a wedged gas gap. The discharge behavior is investigated experimentally through analyzing images taken with exposure time of several milliseconds. Results indicate that a stripe pattern with a homogeneous corona around can be observed under a lower voltage, and the discharge turns quite homogeneous at a higher voltage. It has been found that the micro-discharges tend to be generated at the region with small gap width, and then move to the region with large gap width along the flowing gas. Therefore, dielectric barrier discharge with a fairly large gap width can be obtained at a rather lowered voltage. Based on the visualization of the discharge with exposure time of several microseconds, it has been found that micro-discharge filament consists of the volumetric discharge between the two electrodes and the stochastic surface discharge on the dielectric for the filamentary discharge. The stripe on the image taken with exposure time of several milliseconds results from the moving of the volumetric discharge along the gas flow, and the homogeneous corona is a superimposition of the surface discharge at different half cycles. These results are of great importance for industrial applications of the atmospheric pressure uniform discharge.%利用楔形气隙极大地降低了气隙的击穿电压,从而在流动氩气中实现了大气压下较大气隙宽度的介质阻挡放电。通过毫秒量级曝光时间拍照,对放电的动力学行为进行了研究。结果发现:外加电压较低时放电为条纹斑图,且在条纹的周围伴有均匀的晕;随外加电压升高,放电会过渡到均匀模式。研究表明微放电总是产生于窄气隙区域,然后沿着气流向大间隙方向定向移动,因此在较低电压下实现了大气隙宽度的介质

  13. Investigations on Substrate Temperature-Induced Growth Modes of Organic Semiconductors at Dielectric/semiconductor Interface and Their Correlation with Threshold Voltage Stability in Organic Field-Effect Transistors.

    Science.gov (United States)

    Padma, Narayanan; Maheshwari, Priya; Bhattacharya, Debarati; Tokas, Raj B; Sen, Shashwati; Honda, Yoshihide; Basu, Saibal; Pujari, Pradeep Kumar; Rao, T V Chandrasekhar

    2016-02-10

    Influence of substrate temperature on growth modes of copper phthalocyanine (CuPc) thin films at the dielectric/semiconductor interface in organic field effect transistors (OFETs) is investigated. Atomic force microscopy (AFM) imaging at the interface reveals a change from 'layer+island' to "island" growth mode with increasing substrate temperatures, further confirmed by probing the buried interfaces using X-ray reflectivity (XRR) and positron annihilation spectroscopic (PAS) techniques. PAS depth profiling provides insight into the details of molecular ordering while positron lifetime measurements reveal the difference in packing modes of CuPc molecules at the interface. XRR measurements show systematic increase in interface width and electron density correlating well with the change from layer + island to coalesced huge 3D islands at higher substrate temperatures. Study demonstrates the usefulness of XRR and PAS techniques to study growth modes at buried interfaces and reveals the influence of growth modes of semiconductor at the interface on hole and electron trap concentrations individually, thereby affecting hysteresis and threshold voltage stability. Minimum hole trapping is correlated to near layer by layer formation close to the interface at 100 °C and maximum to the island formation with large voids between the grains at 225 °C.

  14. Electrical characteristics of metal–insulator–semiconductor and metal–insulator–semiconductor–insulator–metal capacitors under different high-$k$ gate dielectrics investigated in the semi-classical and quantum mechanical models

    Indian Academy of Sciences (India)

    SLAH HLALI; NEILA HIZEM; ADEL KALBOUSSI

    2017-02-01

    In this paper the electrical characteristics of metal–insulator–semiconductor (MIS) and metal–insulator–semiconductor–insulator–metal (MISIM) capacitors with (100)-oriented p-type silicon as a substrate under different high-$k$ gate dielectrics (SiO$_2$, HfO$_2$, La$_2$O$_3$ and TiO$_2$) are investigated in the semi-classical and quantum mechanical models. We review the quantum correction in the inversion layer charge density for p-doped structures. The purpose of this paper is to point out the differences between the semi-classical and quantum mechanical charge descriptions at the insulator–semiconductor interface and the effect of the type of oxide and their position (gate oxide or buried oxide) in our structures. In particular, capacitance–voltage ($C–V$), relative position of the sub-band energies and their wavefunctions are studied to examine qualitatively and quantitatively the electron states and charging mechanisms in our devices. We find that parameters such as threshold voltage and device trans-conductance are enormously sensitive to the proper treatment of quantization effects.

  15. Polyamide 66 as a Cryogenic Dielectric

    Energy Technology Data Exchange (ETDEWEB)

    Tuncer, Enis [ORNL; Polyzos, Georgios [ORNL; Sauers, Isidor [ORNL; James, David Randy [ORNL; Ellis, Alvin R [ORNL; Messman, Jamie M [ORNL; Aytug, Tolga [ORNL

    2009-01-01

    Improvements in superconductor and cryogenic technologies enable novel power apparatus, \\eg, cables, transformers, fault current limiters, generators, \\etc, with better device characteristics than their conventional counterparts. In these applications electrical insulation materials play an important role in system weight, footprint (size), and voltage level. The trend in the electrical insulation material selection has been to adapt or to employ conventional insulation materials to these new systems. However, at low temperatures, thermal contraction and loss of mechanical strength in many materials make them unsuitable for superconducting power applications. In this paper, a widely used commercial material was characterized as a potential cryogenic dielectric. The material is used in ``oven bag'' a heat-resistant polyamide (nylon) used in cooking (produced by Reynolds\\textregistered, Richmond, VA, USA). It is first characterized by Fourier transform infrared and x-ray diffraction techniques and determined to be composed of polyamide 66 (PA66) polymer. Secondly the complex dielectric permittivity and dielectric breakdown strength of the PA66 films are investigated. The dielectric data are then compared with data reported in the literature. A comparison of dielectric strength with a widely used high-temperature superconductor electrical insulation material, polypropylene-laminated paper (PPLP\\texttrademark\\ a product of Sumitomo Electric Industries, Japan), is provided. It is observed that the statistical analysis of the PA66 films yields 1\\% failure probability at $127\\ \\kilo\\volt\\milli\\meter^{-1}$; this value is approximately $46\\ \\kilo\\volt\\milli\\meter^{-1}$ higher than PPLP\\texttrademark. It is concluded that PA66 may be a good candidate for cryogenic applications. Finally, a summary of dielectric properties of some of the commercial tape insulation materials and various polymers is also provided.

  16. Quantum cascade laser based monitoring of CF2 radical concentration as a diagnostic tool of dielectric etching plasma processes

    Science.gov (United States)

    Hübner, M.; Lang, N.; Zimmermann, S.; Schulz, S. E.; Buchholtz, W.; Röpcke, J.; van Helden, J. H.

    2015-01-01

    Dielectric etching plasma processes for modern interlevel dielectrics become more and more complex by the introduction of new ultra low-k dielectrics. One challenge is the minimization of sidewall damage, while etching ultra low-k porous SiCOH by fluorocarbon plasmas. The optimization of this process requires a deeper understanding of the concentration of the CF2 radical, which acts as precursor in the polymerization of the etch sample surfaces. In an industrial dielectric etching plasma reactor, the CF2 radical was measured in situ using a continuous wave quantum cascade laser (cw-QCL) around 1106.2 cm-1. We measured Doppler-resolved ro-vibrational absorption lines and determined absolute densities using transitions in the ν3 fundamental band of CF2 with the aid of an improved simulation of the line strengths. We found that the CF2 radical concentration during the etching plasma process directly correlates to the layer structure of the etched wafer. Hence, this correlation can serve as a diagnostic tool of dielectric etching plasma processes. Applying QCL based absorption spectroscopy opens up the way for advanced process monitoring and etching controlling in semiconductor manufacturing.

  17. Antenna with Dielectric Having Geometric Patterns

    Science.gov (United States)

    Dudley, Kenneth L. (Inventor); Elliott, Holly A. (Inventor); Cravey, Robin L. (Inventor); Connell, John W. (Inventor); Ghose, Sayata (Inventor); Watson, Kent A. (Inventor); Smith, Jr., Joseph G. (Inventor)

    2013-01-01

    An antenna includes a ground plane, a dielectric disposed on the ground plane, and an electrically-conductive radiator disposed on the dielectric. The dielectric includes at least one layer of a first dielectric material and a second dielectric material that collectively define a dielectric geometric pattern, which may comprise a fractal geometry. The radiator defines a radiator geometric pattern, and the dielectric geometric pattern is geometrically identical, or substantially geometrically identical, to the radiator geometric pattern.

  18. Preparation of Ba{sub 0.09}Sr{sub 0.91}TiO{sub 3}/YBa{sub 2}Cu{sub 3}O{sub 7−x} bilayers and investigation of their dielectric properties

    Energy Technology Data Exchange (ETDEWEB)

    Jia, Jiqiang, E-mail: clwljiajiqiang@163.com [School of Materials Science and Engineering, Xi' an University of Technology, No. 5 South Jinhua Road, Xi' an, Shaanxi 710048 (China); Zhao, Gaoyang, E-mail: zhaogy@xaut.edu.cn [School of Materials Science and Engineering, Xi' an University of Technology, No. 5 South Jinhua Road, Xi' an, Shaanxi 710048 (China); Advanced Materials Analysis and Test Center, Xi' an University of Technology, No. 5 South Jinhua Road, Xi' an, Shaanxi 710048 (China); Shi, Xiaoxue, E-mail: 287816955@qq.com [School of Materials Science and Engineering, Xi' an University of Technology, No. 5 South Jinhua Road, Xi' an, Shaanxi 710048 (China); Lei, Li, E-mail: 35570728@qq.com [Advanced Materials Analysis and Test Center, Xi' an University of Technology, No. 5 South Jinhua Road, Xi' an, Shaanxi 710048 (China)

    2016-08-15

    Highlights: • The BST/YBCO and BST/LNO bilayers were prepared via sol–gel method. • The dielectric properties of BST/YBCO and BST/LNO structures were compared. • The low temperature dielectric properties of BST/YBCO and BST/LNO were studied. - Abstract: YBa{sub 2}Cu{sub 3}O{sub 7−x} (YBCO) films of 110 nm thickness were prepared on LaAlO{sub 3} (LAO) substrates via the sol–gel method. Subsequently, about 400 nm thick Ba{sub 0.09}Sr{sub 0.91}TiO{sub 3} (BST) films were epitaxially grown on the YBCO and LNO films surface; the BST films exhibited a strong c-axis orientation. The dielectric adjustability and relative dielectric constant was investigated in the range of 300-83 K. Results indicate that the tunability of the Ba{sub 0.09}Sr{sub 0.91}TiO{sub 3}/YBa{sub 2}Cu{sub 3}O{sub 7−x} (BST/YBCO) displayed an increase relative to c-axis-oriented BST on LaNiO{sub 3} (LNO). The tunability was further enhanced as the operating temperature decreased, yet the loss tangent (tanδ) decreased. The tunability and the tanδ at 100 kHz and 83 K were 58% and 0.029, respectively.

  19. Processing dependent properties of silica xerogels for interlayer dielectric applications

    Science.gov (United States)

    Jain, Anurag

    One of the current and near future research focus in microelectronics is to integrate copper with a new low dielectric constant (K) material. The traditional low K is dense SiO2 (K = 4). Introducing porosity in materials with silica backbone is promising as processing and integration methods are well known. This thesis focuses on studying silica xerogel, also known as nanoporous silica. A new low-K material has to be tested for an array of electrical, mechanical, thermal, and chemical properties before it is deemed successful to replace dense SiO2. These properties of silica xerogels are characterized using various analytical techniques and the effect of processing conditions is studied. The property data is explained by the models and mechanisms relating processing-structure-property behavior. The processing effects on thermal and mechanical properties are studied in great detail and the theories for generic porous low-K materials are developed. The xerogel films are processed at ambient conditions and crack free, thick (0.5--4 mum), highly porous (˜25--90%) films are obtained. Two methods of porosity control were used. One is the traditional single solvent (ethanol) method and another is a binary solvent (mixture of ethanol and ethylene glycol) method. The films underwent aging and silylation procedures to make the backbone stiff and hydrophobic. Sintering of xerogel films eliminates defects and organics and additional condensation reactions make matrix more connected, dense and ordered. Films were characterized for their refractive index, thickness, porosity, pore size and surface roughness. Dielectric constant measurements at 1 MHz show that K varies linearly with porosity. Dielectric loss tangents are low and breakdown strength meets the standards. FTIR and XPS analysis show that films are stable chemically and remain hydrophobic even after boiling in water. Mechanical and thermal properties of porous materials are dependent on the microstructure and various

  20. Polymer Composite and Nanocomposite Dielectric Materials for Pulse Power Energy Storage

    Directory of Open Access Journals (Sweden)

    Hans-Conrad zur Loye

    2009-10-01

    Full Text Available This review summarizes the current state of polymer composites used as dielectric materials for energy storage. The particular focus is on materials: polymers serving as the matrix, inorganic fillers used to increase the effective dielectric constant, and various recent investigations of functionalization of metal oxide fillers to improve compatibility with polymers. We review the recent literature focused on the dielectric characterization of composites, specifically the measurement of dielectric permittivity and breakdown field strength. Special attention is given to the analysis of the energy density of polymer composite materials and how the functionalization of the inorganic filler affects the energy density of polymer composite dielectric materials.

  1. Broadband local dielectric spectroscopy

    Science.gov (United States)

    Labardi, M.; Lucchesi, M.; Prevosto, D.; Capaccioli, S.

    2016-05-01

    A route to extend the measurement bandwidth of local dielectric spectroscopy up to the MHz range has been devised. The method is based on a slow amplitude modulation at a frequency Ω of the excitation field oscillating at a frequency ω and the coherent detection of the modulated average electric force or force gradient at Ω. The cantilever mechanical response does not affect the measurement if Ω is well below its resonant frequency; therefore, limitations on the excitation field frequency are strongly reduced. Demonstration on a thin poly(vinyl acetate) film is provided, showing its structural relaxation spectrum on the local scale up to 45 °C higher than glass temperature, and nanoscale resolution dielectric relaxation imaging near conductive nanowires embedded in the polymer matrix was obtained up to 5 MHz frequency, with no physical reason to hinder further bandwidth extension.

  2. All-dielectric metamaterials.

    Science.gov (United States)

    Jahani, Saman; Jacob, Zubin

    2016-01-01

    The ideal material for nanophotonic applications will have a large refractive index at optical frequencies, respond to both the electric and magnetic fields of light, support large optical chirality and anisotropy, confine and guide light at the nanoscale, and be able to modify the phase and amplitude of incoming radiation in a fraction of a wavelength. Artificial electromagnetic media, or metamaterials, based on metallic or polar dielectric nanostructures can provide many of these properties by coupling light to free electrons (plasmons) or phonons (phonon polaritons), respectively, but at the inevitable cost of significant energy dissipation and reduced device efficiency. Recently, however, there has been a shift in the approach to nanophotonics. Low-loss electromagnetic responses covering all four quadrants of possible permittivities and permeabilities have been achieved using completely transparent and high-refractive-index dielectric building blocks. Moreover, an emerging class of all-dielectric metamaterials consisting of anisotropic crystals has been shown to support large refractive index contrast between orthogonal polarizations of light. These advances have revived the exciting prospect of integrating exotic electromagnetic effects in practical photonic devices, to achieve, for example, ultrathin and efficient optical elements, and realize the long-standing goal of subdiffraction confinement and guiding of light without metals. In this Review, we present a broad outline of the whole range of electromagnetic effects observed using all-dielectric metamaterials: high-refractive-index nanoresonators, metasurfaces, zero-index metamaterials and anisotropic metamaterials. Finally, we discuss current challenges and future goals for the field at the intersection with quantum, thermal and silicon photonics, as well as biomimetic metasurfaces.

  3. Dielectric Metamaterial Reflector

    Science.gov (United States)

    2017-02-14

    induced plasma coupled to a fluidized bed reactor have been utilized at SRI for 20+ years. As such, it would seem that Si particles may be easier to... etching process limits this process to cm2 areas. There have been several studies and demonstrations of the optical properties of dilute as well...magnetic optical response in a dielectric nanoparticle by ultrafast photoexcitation of dense electron–hole plasma . Nano letters, 15(9), pp.6187-6192. 34

  4. All-dielectric metamaterials

    Science.gov (United States)

    Jahani, Saman; Jacob, Zubin

    2016-01-01

    The ideal material for nanophotonic applications will have a large refractive index at optical frequencies, respond to both the electric and magnetic fields of light, support large optical chirality and anisotropy, confine and guide light at the nanoscale, and be able to modify the phase and amplitude of incoming radiation in a fraction of a wavelength. Artificial electromagnetic media, or metamaterials, based on metallic or polar dielectric nanostructures can provide many of these properties by coupling light to free electrons (plasmons) or phonons (phonon polaritons), respectively, but at the inevitable cost of significant energy dissipation and reduced device efficiency. Recently, however, there has been a shift in the approach to nanophotonics. Low-loss electromagnetic responses covering all four quadrants of possible permittivities and permeabilities have been achieved using completely transparent and high-refractive-index dielectric building blocks. Moreover, an emerging class of all-dielectric metamaterials consisting of anisotropic crystals has been shown to support large refractive index contrast between orthogonal polarizations of light. These advances have revived the exciting prospect of integrating exotic electromagnetic effects in practical photonic devices, to achieve, for example, ultrathin and efficient optical elements, and realize the long-standing goal of subdiffraction confinement and guiding of light without metals. In this Review, we present a broad outline of the whole range of electromagnetic effects observed using all-dielectric metamaterials: high-refractive-index nanoresonators, metasurfaces, zero-index metamaterials and anisotropic metamaterials. Finally, we discuss current challenges and future goals for the field at the intersection with quantum, thermal and silicon photonics, as well as biomimetic metasurfaces.

  5. Dielectric spectroscopy of polyaniline

    Energy Technology Data Exchange (ETDEWEB)

    Calleja, R.D.; Matveeva, E.M. [Polytechnical Univ. of Valencia, (Spain)

    1993-12-31

    Polyaniline films (PANI) are being considered as attractive new galvanic sources, electrochromic displays, chemical sensors, etc. So far much work has been done to study their optical, electrochemical and electrical properties. However, there are still doubts about the basic electric conductivity mechanisms of PANI. The aim of this paper is to study the influence of water molecules and acid anions on the properties of PANI films by dielectric spectroscopy.

  6. Ion Structure Near a Core-Shell Dielectric Nanoparticle

    Science.gov (United States)

    Ma, Manman; Gan, Zecheng; Xu, Zhenli

    2017-02-01

    A generalized image charge formulation is proposed for the Green's function of a core-shell dielectric nanoparticle for which theoretical and simulation investigations are rarely reported due to the difficulty of resolving the dielectric heterogeneity. Based on the formulation, an efficient and accurate algorithm is developed for calculating electrostatic polarization charges of mobile ions, allowing us to study related physical systems using the Monte Carlo algorithm. The computer simulations show that a fine-tuning of the shell thickness or the ion-interface correlation strength can greatly alter electric double-layer structures and capacitances, owing to the complicated interplay between dielectric boundary effects and ion-interface correlations.

  7. Modeling shape-memory behavior of dielectric elastomers

    Science.gov (United States)

    Xiao, Rui

    2016-04-01

    In this study, we present a constitutive model to couple the shape memory and dielectric behaviors of polymers. The model adopted multiple relaxation processes and temperature-dependent relaxation time to describe the glass transition behaviors. The model was applied to simulate the thermal-mechanical-electrical behaviors of the dielectric elastomer VHB 4905. We investigated the influence of deformation temperature, voltage rate, relaxation time on the electromechanical and shape-memory behavior of dielectric elastomers. This work provides a method for combining the shape-memory properties and electroactive polymers, which can expand the applications of these soft active materials.

  8. Dielectric loss determination using perturbation

    OpenAIRE

    Andrawis, Madeleine Y.

    1991-01-01

    A dielectric filled cavity structure is currently being used to estimate the dielectric constant and loss factor over a wide range of frequencies of a dielectric material which fills the cavity structure [Saed, 1987]. A full field analysis is used to compute the effective complex permittivity of the sample material based on reflection coefficient measurements of the cavity structure and associated geometrical dimensions. The method has previously been used successfully to de...

  9. All dielectric metamaterial loaded tunable plasmonic waveguide

    Science.gov (United States)

    Sifat, Abid Anjum; Sayem, Ayed Al; Sajeeb, M. Mahmudul Hasan

    2017-08-01

    In this article, a 2D plasmonic waveguide loaded with all dielectric anisotropic metamaterial, consisting of alternative layers of Si-SiO2, has been theoretically proposed and numerically analyzed. Main characteristics of waveguide i.e. propagation constant, propagation length and normalized mode area have been calculated for different values of ridge width and height at telecommunication wavelength. The respective 1D structure of the waveguide has been analytically solved for the anisotropic ridge as a single uniaxial medium with dielectric tensor defined by EMT. The 2D structure has been analyzed numerically through FEM simulation using Mode analysis module in Comsol Multiphysics. Both the EMT and real multilayer structure have been considered in numerical simulations. Such structure with all dielectric metamaterial provides an extra degree of freedom namely fill factor, fraction of Si layer in a Si-SiO2 unit cell, to tune the propagation characteristics compared to the conventional DLSSP waveguide. A wide range of variations in all the characteristics have been observed for different fill factor values. Besides, the effect of the first interface layer has also been considered. Though all dielectric metamaterial has already been utilized in photonic waveguide as cladding, the implementation in plasmonic waveguide hasn't been investigated yet to our best knowledge. The proposed device might be a potential in deep subwavelength optics, PIC and optoelectronics.

  10. Test plan for prototype dielectric permittivity sensor

    Energy Technology Data Exchange (ETDEWEB)

    Pfeifer, M.C.

    1993-07-01

    The digface characterization project funded by the Buried Waste Integrated Demonstration (BWID) is designed to test a new method of monitoring hazardous conditions during the remediation at waste sites. Often on a large scale, the exact cause of each anomaly is difficult to determine and ambiguities remain in the characterization of a site. The digface characterization concept is designed to alleviate some of this uncertainty by creating systems that monitor small volumes of soil and detect anomalous areas during remediation before they are encountered. The goal of the digface characterization demonstration is to detect changes in the physical properties from one volume to another and relate these changes in physical properties to changes in the level of contamination. Dielectric permittivity mapping is a method that might prove useful in digface characterization. In this project, the role of a dielectric permittivity monitoring device is under investigation. This project addresses two issues: what are the optimal means of mapping dielectric permittivity contrasts and what types of targets can be detected using dielectric permittivity mapping.

  11. Femtosecond optomagnetism in dielectric antiferromagnets

    Science.gov (United States)

    Bossini, D.; Rasing, Th

    2017-02-01

    Optical femtosecond manipulation of magnetic order is attractive for the development of new concepts for ultrafast magnetic recording. Theoretical and experimental investigations in this research area aim at establishing a physical understanding of magnetic media in light-induced non-equilibrium states. Such a quest requires one to adjust the theory of magnetism, since the thermodynamical concepts of elementary excitations and spin alignment determined by the exchange interaction are not applicable on the femtosecond time-scale after the photo-excitation. Here we report some key milestones concerning the femtosecond optical control of spins in dielectric antiferromagnets, whose spin dynamics is by nature faster than that of ferromagnets and can be triggered even without any laser heating. The recent progress of the opto-magnetic effect in the sub-wavelength regime makes this exciting research area even more promising, in terms of both fundamental breakthroughs and technological perspectives.

  12. Dielectric properties of fly ash

    Indian Academy of Sciences (India)

    S C Raghavendra; R L Raibagkar; A B Kulkarni

    2002-02-01

    This paper reports the dielectric properties of fly ash. The dielectric measurements were performed as a function of frequency and temperature. The sample of fly ash shows almost similar behaviour in the frequency and temperature range studied. The large value of dielectric constant in the typical frequency range is because of orientation polarization and tight binding force between the ions or atoms in the fly ash. The sample of fly ash is of great scientific and technological interest because of its high value of dielectric constant (104).

  13. Characteristics of radio-frequency atmospheric pressure dielectric-barrier discharge with dielectric electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Hussain, S., E-mail: shussain@uos.edu.pk, E-mail: shussainuos@yahoo.com; Qazi, H. I. A.; Badar, M. A. [Department of Physics, University of Sargodha, 40100 Sargodha (Pakistan)

    2014-03-15

    An experimental investigation to characterize the properties and highlight the benefits of atmospheric pressure radio-frequency dielectric-barrier discharge (rf DBD) with dielectric electrodes fabricated by anodizing aluminium substrate is presented. The current-voltage characteristics and millisecond images are used to distinguish the α and γ modes. This atmospheric rf DBD is observed to retain the discharge volume without constriction in γ mode. Optical emission spectroscopy demonstrates that the large discharge current leads to more abundant reactive species in this plasma source.

  14. Anomaly diffuse and dielectric relaxation in strontium doped lanthanum molybdate

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Xiao [State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi' an 710072 (China); Fan, Huiqing, E-mail: hqfan3@163.com [State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi' an 710072 (China); Shi, Jing [State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi' an 710072 (China)

    2011-12-15

    Highlights: Black-Right-Pointing-Pointer The anomaly diffuse and dielectric relaxation behaviors are fitted by the Cole-Cole approach. Black-Right-Pointing-Pointer The peak in the LSMO is corresponding to different oxygen ion diffusion process. Black-Right-Pointing-Pointer We first give better explanation about the strange conductivity change caused by doping. Black-Right-Pointing-Pointer The oxygen ion diffusion is due to a combination of the dipolar relaxation and the motion of ions. -- Abstract: The dielectric properties of the La{sub 2-x}Sr{sub x}Mo{sub 2}O{sub 9-{delta}} (x = 0-0.2) ceramics were investigated in the temperature range of 300-800 K. Dielectric measurement reveals that two dielectric anomalies, associated with the oxygen ion diffusion, exist in frequency spectrum with x = 0.5. The broad dielectric peaks in tan {delta}({omega}) can be well fitted by a modified Cole-Cole approach. When x = 0.1, only one dielectric relaxation peak is observed, corresponding to different oxygen ion diffusion processes, as distinct from the only relaxation peak in the pure La{sub 2}Mo{sub 2}O{sub 9}. The relaxation parameters {tau}{sub 0}, the dielectric relaxation strength {Delta}, and the activation energy E{sub a} were obtained. The result of this work shows that, the conductivity change caused by doping between the two phases is due to the combination of the dipolar effects and motion of ions.

  15. Local dielectric permittivity profiles of sapphire/polypropylene interfaces

    Science.gov (United States)

    Yu, Liping; Ranjan, V.; Buongiorno Nardelli, M.; Bernholc, J.

    2009-03-01

    Recently, the need for high-power-density capacitors has stimulated research to develop composite dielectric materials with high-k nanoparticles embedded in a polymer matrix. In these materials, surfaces and interfaces may play an important role in determining the overall dielectric properties. We present first-principles investigations of the dielectric permittivity profiles across slabs and interfaces of sapphire(α-Al2O3)/isotactic-polypropylene(iPP). Our results indicate that the permittivity profile at interface strongly depends on the nanoscale averaging procedure. We propose an averaging model that ensures near-locality of the dielectric function. We find that: (i) the dielectric permittivity approaches the corresponding bulk value just a few atomic layers away from the interface or surface; (ii) the dielectric constant is enhanced at the surfaces of the isolated α-Al2O3 slabs, while no enhancement is observed at the iPP slab surfaces; and (iii) the dielectric transition at the αAl2O3/iPP is mainly confined in the αAl2O3 side.

  16. Tunable optical properties of silver-dielectric-silver nanoshell

    Science.gov (United States)

    Shirzaditabar, Farzad; Saliminasab, Maryam

    2014-05-01

    Tunable optical properties of silver-dielectric-silver nanoshell including surface plasmon resonance (SPR) and resonance light scattering (RLS) based on quasi-static theory are investigated. When the silver core radius increases, the longer resonance wavelength red shifts and light scattering cross-section decreases whereas the shorter resonance wavelength blue shifts and the light scattering cross-section increases. The effect of middle dielectric thickness on the light scattering cross-section of nanoshell is different from those of the silver core radius changes. As middle dielectric radius increases, the longer resonance wavelength first blue shifts and then red shifts and the light scattering cross-section increases whereas the shorter resonance wavelength always red shifts and the light scattering cross-section decreases. The sensitivity of RLS to the refractive index of embedding medium is also reported. As the silver core radius increases, the sensitivity of silver-dielectric-silver nanoshell decreases whereas increasing the middle dielectric thickness leads to increase the sensitivity of silver-dielectric-silver nanoshell. Tunable optical properties of silver-dielectric-silver nanoshell verify the biosensing potential of this nanostructure.

  17. Dielectric materials and electrostatics

    CERN Document Server

    Gallot-Lavalle, Olivier

    2013-01-01

    An introduction to the physics of electrical insulation, this book presents the physical foundations of this discipline and the resulting applications. It is structured in two parts. The first part presents a mathematical and intuitive approach to dielectrics; various concepts, including polarization, induction, forces and losses are discussed. The second part provides readers with the keys to understanding the physics of solid, liquid and gas insulation. It comprises a phenomenological description of discharges in gas and its resulting applications. Finally, the main electrical properties

  18. Inorganic optical dielectric films

    Science.gov (United States)

    Woollam, John A.

    1996-07-01

    Dielectric coatings have been in use for a very long time, yet today they represent a steadily growing wold-wide industry. A wide range of materials, and applications from the near ultraviolet into the infrared are in use, or under development. This paper is a brief survey, including references to the literature, and a discussion of materials diagnostics. Discussed is the microstructure, optical constants and their relationship as determined especially by optical measurements. This paper emphasizes the materials science aspects rather than applications.

  19. Charge transport model to predict intrinsic reliability for dielectric materials

    Energy Technology Data Exchange (ETDEWEB)

    Ogden, Sean P. [Howard P. Isermann Department of Chemical and Biological Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); GLOBALFOUNDRIES, 400 Stonebreak Rd. Ext., Malta, New York 12020 (United States); Borja, Juan; Plawsky, Joel L., E-mail: plawsky@rpi.edu; Gill, William N. [Howard P. Isermann Department of Chemical and Biological Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Lu, T.-M. [Department of Physics, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Yeap, Kong Boon [GLOBALFOUNDRIES, 400 Stonebreak Rd. Ext., Malta, New York 12020 (United States)

    2015-09-28

    Several lifetime models, mostly empirical in nature, are used to predict reliability for low-k dielectrics used in integrated circuits. There is a dispute over which model provides the most accurate prediction for device lifetime at operating conditions. As a result, there is a need to transition from the use of these largely empirical models to one built entirely on theory. Therefore, a charge transport model was developed to predict the device lifetime of low-k interconnect systems. The model is based on electron transport and donor-type defect formation. Breakdown occurs when a critical defect concentration accumulates, resulting in electron tunneling and the emptying of positively charged traps. The enhanced local electric field lowers the barrier for electron injection into the dielectric, causing a positive feedforward failure. The charge transport model is able to replicate experimental I-V and I-t curves, capturing the current decay at early stress times and the rapid current increase at failure. The model is based on field-driven and current-driven failure mechanisms and uses a minimal number of parameters. All the parameters have some theoretical basis or have been measured experimentally and are not directly used to fit the slope of the time-to-failure versus applied field curve. Despite this simplicity, the model is able to accurately predict device lifetime for three different sources of experimental data. The simulation's predictions at low fields and very long lifetimes show that the use of a single empirical model can lead to inaccuracies in device reliability.

  20. Double Negative Metamaterials in Dielectric Waveguide Configurations

    OpenAIRE

    Clark, Jeffrey

    2006-01-01

    With the recent resurgence of interest in double negative (DNG) materials and the reported construction of a metamaterial with DNG characteristics, applications of these materials become feasible and examination of the behavior of systems and devices a potentially fruitful topic. The most promising area of research, upon inquiry into past work related to DNG materials, proves to be dielectric waveguides. The present investigation, then, focuses on the inclusion of DNG materials in various ...

  1. Casimir Effect for Dielectric Plates

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    We generalize Kupisewska method to the three-dimensional system and another derivation of the Casimir effect between two dielectric plates is presented based on the explicit quantization of the electromagnetic field in the presence of dielectrics, where the physical meaning of "evanescent mode" is discussed. The Lifshitz's formula is rederived perfect metallic plates will the evanescent modes become unimportant.

  2. Dielectric laser accelerators

    Science.gov (United States)

    England, R. Joel; Noble, Robert J.; Bane, Karl; Dowell, David H.; Ng, Cho-Kuen; Spencer, James E.; Tantawi, Sami; Wu, Ziran; Byer, Robert L.; Peralta, Edgar; Soong, Ken; Chang, Chia-Ming; Montazeri, Behnam; Wolf, Stephen J.; Cowan, Benjamin; Dawson, Jay; Gai, Wei; Hommelhoff, Peter; Huang, Yen-Chieh; Jing, Chunguang; McGuinness, Christopher; Palmer, Robert B.; Naranjo, Brian; Rosenzweig, James; Travish, Gil; Mizrahi, Amit; Schachter, Levi; Sears, Christopher; Werner, Gregory R.; Yoder, Rodney B.

    2014-10-01

    The use of infrared lasers to power optical-scale lithographically fabricated particle accelerators is a developing area of research that has garnered increasing interest in recent years. The physics and technology of this approach is reviewed, which is referred to as dielectric laser acceleration (DLA). In the DLA scheme operating at typical laser pulse lengths of 0.1 to 1 ps, the laser damage fluences for robust dielectric materials correspond to peak surface electric fields in the GV /m regime. The corresponding accelerating field enhancement represents a potential reduction in active length of the accelerator between 1 and 2 orders of magnitude. Power sources for DLA-based accelerators (lasers) are less costly than microwave sources (klystrons) for equivalent average power levels due to wider availability and private sector investment. Because of the high laser-to-particle coupling efficiency, required pulse energies are consistent with tabletop microJoule class lasers. Combined with the very high (MHz) repetition rates these lasers can provide, the DLA approach appears promising for a variety of applications, including future high-energy physics colliders, compact light sources, and portable medical scanners and radiative therapy machines.

  3. Dielectric Spectroscopy of Nanostructured Polypyrrole-NiO Composites

    Directory of Open Access Journals (Sweden)

    Syeda Seema

    2014-01-01

    Full Text Available Conducting polypyrrole-nickel oxide (polypyrrole-NiO composites were synthesized by in situ deposition technique by placing different weight percentages of NiO powder (10, 20, 30, 40, and 50% during the polymerisation of pyrrole. The polypyrrole-NiO composites were later characterised with Fourier transform infrared spectroscopy (FTIR which confirms the presence of polypyrrole in the composite. AC conductivity was studied in the frequency range from 102 to 107 Hz. From these studies it is found that AC conductivity remains constant at low frequency and increases rapidly at higher frequency, which is the characteristic behavior of disordered materials. The dielectric behavior of these composites was also investigated in the frequency range 102–107 Hz. It is observed from these studies that the dielectric constant and dielectric tangent loss decrease exponentially with frequency. The composites exhibit a low value of dielectric loss at higher frequency.

  4. Transient Newton rings in dielectrics upon fs laser ablation

    CERN Document Server

    Garcia-Lechuga, Mario; Hernandez-Rueda, Javier; Solis, Javier

    2014-01-01

    We report the appearance of transient Newton rings in dielectrics (sapphire and lead-oxide glass) during ablation with single fs laser pulses. Employing femtosecond microscopy with 800 nm excitation and 400 nm illumination, we observe a characteristic ring pattern that dynamically changes for increasing delay times between pump and probe pulse. Such transient Newton rings have been previously observed in metals and semiconductors at fluences above the ablation threshold and were related to optical interference of the probe beam reflected at the front surface of the ablating layer and at the interface of the non-ablating substrate. Yet, it had been generally assumed that this phenomenon cannot be (and has not been) observed in dielectrics due to the different ablation mechanism and optical properties of dielectrics. The fact that we are able to observe them has important consequences for the comprehension of the ablation mechanisms in dielectrics and provides a new method for investigating these mechanisms in ...

  5. Hydrothermal synthesis and dielectric properties of lanthanum titanate ceramics

    Institute of Scientific and Technical Information of China (English)

    DENG Yuan; NAN Ce-wen

    2005-01-01

    Lanthanum titanate (La2/3TiO3) powders were synthesized by hydrothermal method based on the reaction of TiO2, La(NO3 )3 and KOH at 160 ℃ for 24 h followed by the treatment of acidification. The microstructure,morphology and dielectric properties were investigated by using X-ray diffraction, scanning electron microscope,transmission electron microscope and impedance method. The results show that the La2/3 TiO3 particles consist of nearly homogenous and lamellar grains. The particles can be sintered into porous ceramics above 1 150 ℃. The dielectric properties of La2/3 TiO3 show that both the dielectric constant and the dielectric loss tangent decrease with the increase of frequency.

  6. Dielectric properties of grain–grainboundary binary system

    Energy Technology Data Exchange (ETDEWEB)

    Cheng, Peng-Fei, E-mail: pfcheng@xpu.edu.cn [School of Science, Xi’an Polytechnic University, Xi’an 710048 (China); Li, Sheng-Tao; Wang, Hui [State Key Laboratory of Electrical Insulation and Power Equipment, Xi’an Jiaotong University, Xi’an 710049 (China)

    2014-09-15

    Dielectric properties of grain–grainboundary binary system are analyzed theoretically and compared with unary system and classical Maxwell–Wagner (MW) polarization in binary system. It is found that MW polarization appears at higher frequency compared with intrinsic polarization for grain–grainboundary binary system, which is abnormal compared with classical dielectric theory. This dielectric anomaly is premised on the existence of electronic relaxation at grainboundary. The origin of giant dielectric constant of CaCu{sub 3}Ti{sub 4}O{sub 12} (CCTO) ceramics is also investigated on the basis of the theoretical results. It is proposed that low frequency relaxation originates from electronic relaxation of oxygen vacancy at depletion layer, while high frequency relaxation comes from MW polarization. The results of this paper offer a quantitative identification of MW polarization from intrinsic polarization at grainboundary and a judgment of the mechanism and location of a certain polarization in grain–grainboundary binary system.

  7. On the Dielectric Study of Se80- x Te20Pb x ( x = 0, 1 and 2) Glasses

    Science.gov (United States)

    Thakur, Anjali; Patial, Balbir Singh; Thakur, Nagesh

    2017-03-01

    In the present paper, the dielectric parameters such as the dielectric constant ɛ'( ω), dielectric loss ɛ″( ω) and alternating current (ac) conductivity have been investigated for bulk amorphous chalcogenide Se80- x Te20Pb x ( x = 0, 1 and 2) glasses in the frequency range 10 Hz to 500 kHz and within the temperature range from 300 K to 320 K. Dielectric constant ɛ'( ω) and dielectric loss ɛ″( ω) are found to be highly frequency ( ω) and temperature dependent, and this behavior is interpreted on the basis of Guintini's theory of dielectric dispersion. The ac conductivity ( σ ac) is found to be temperature independent and obey the power law ω s , where s composition dependence of the dielectric constant, dielectric loss and ac conductivity are also discussed and reported here.

  8. Inhibitor of growth 4 (ING4) is up-regulated by a low K intake and suppresses renal outer medullary K channels (ROMK) by MAPK stimulation.

    Science.gov (United States)

    Zhang, Xin; Lin, Dao-Hong; Jin, Yan; Wang, Ke-Sheng; Zhang, Yan; Babilonia, Elisa; Wang, Zhijian; Wang, Zhiqin; Giebisch, Gerhard; Han, Ze-Guang; Wang, Wen-Hui

    2007-05-29

    Dietary K intake plays an important role in the regulation of renal K secretion: a high K intake stimulates whereas low K intake suppresses renal K secretion. Our previous studies demonstrated that the Src family protein-tyrosine kinase and mitogen-activated protein kinase (MAPK) are involved in mediating the effect of low K intake on renal K channels and K secretion. However, the molecular mechanism by which low K intake stimulates MAPK is not completely understood. Here we show that inhibitor of growth 4 (ING4), a protein with a highly conserved plant homeodomain finger motif, is involved in mediating the effect of low K intake on MAPK. K restriction stimulates the expression of ING4 in the kidney and superoxide anions, and its related products are involved in mediating the effect of low K intake on ING4 expression. We used HEK293 cells to express ING4 and observed that expression of ING4 increased the phosphorylation of p38 and ERK MAPK, whereas down-regulation of ING4 with small interfering RNA decreased the phosphorylation of p38 and ERK. Immunocytochemistry showed that ING4 was expressed in the renal outer medullary potassium (ROMK)-positive tubules. Moreover, ING4 decreased K currents in Xenopus oocytes injected with ROMK channel cRNA. This inhibitory effect was reversed by blocking p38 and ERK MAPK. These data provide evidence for the role of ING4 in mediating the effect of low K intake on ROMK channel activity by stimulation of p38 and ERK MAPK.

  9. Shear and dielectric responses of propylene carbonate, tripropylene glycol, and a mixture of two secondary amides

    DEFF Research Database (Denmark)

    Gainaru, Catalin; Hecksher, Tina; Olsen, Niels Boye

    2012-01-01

    to calculate the dielectric from the mechanical response and vice versa. Using a single parameter for a given system, good agreement between model calculations and experimental data is achieved for the entire relaxation spectra, including secondary relaxations and the Debye-like dielectric peak......Propylene carbonate and a mixture of two secondary amides, N-ethylformamide and Nethylacetamide, are investigated by means of broadband dielectric and mechanical shear spectroscopy. The similarities between the rheological and the dielectric responses of these liquids and of the previously...... in the secondary amides. In addition, the predictions of the shoving model are confirmed for the investigated liquids...

  10. Investigation of Penning Ionization in Atmospheric Helium Dielectric Barrier Discharges With Air Impurity%含空气杂质大气压氦气介质阻挡放电中彭宁电离作用

    Institute of Scientific and Technical Information of China (English)

    郝艳捧; 阳林; 王晓蕾

    2009-01-01

    进行大气压氦气介质阻挡放电,通过测量放电起始电压和发射光谱,研究本底空气压强BAP在0.8~1000Pa时放电中彭宁电离作用的变化规律.结果发现:BAP<190Pa时,放电起始电压显著降低,N_2~+第一负区391.4nm谱线强度随BAP增大而增大;BAP>190Pa时,放电起始电压显著线性增大,391.4nm谱线强度随BAP增大而逐渐下降,最终几乎趋于零.He原子的各谱线强度随BAP增大而逐渐递减.探讨其物理过程为:放电起始电压的结果和发射光谱的结果均指出彭宁电离作用随BAP改变而变化;He原子各谱线强度变化是由于淬灭造成的.%The change law of Penning ionization in atmospheric helium dielectric barrier discharges (DBDs) with air impurity was investigated. Discharge inception voltage and emission spectra were measured under different background air pressures (BAPs) changing from 0.8Pa to 1000Pa. Results of these two kinds of methods showed that in a range of BAP from 0.8Pa to 190Pa, discharge inception voltage decreased obviously and the 391.4nm line intensity increased with the BAP. When BAP arrives at more than l90Pa, discharge inception voltage increased linearly obviously and 391.4nm line intensity gradually dropped to lower value with the BAP, even a zero value at last. Emission spectra of helium decreased with the BAP. Physical processes analysis indicated that the results from both discharge inception voltage and emission spectra illustrated that Penning ionization due to helium metastables and N_2 changed with the BAP, and the changes of all emission spectra intensities of helium are due to the quenching caused by N_2.

  11. Dielectric relaxation spectroscopy of phlogopite mica

    Energy Technology Data Exchange (ETDEWEB)

    Kaur, Navjeet; Singh, Mohan; Singh, Anupinder [Department of Physics, Guru Nanak Dev University, Amritsar, Punjab 143005 (India); Awasthi, A.M. [Thermodynamics Laboratory, UGC-DAE Consortium for Scientific Research, Indore 452001 (India); Singh, Lakhwant, E-mail: lakhwant@yahoo.com [Department of Physics, Guru Nanak Dev University, Amritsar, Punjab 143005 (India)

    2012-11-15

    An in-depth investigation of the dielectric characteristics of annealed phlogopite mica has been conducted in the frequency range 0.1 Hz-10 MHz and over the temperature range 653-873 K through the framework of dielectric permittivity, electric modulus and conductivity formalisms. These formalisms show qualitative similarities in relaxation processes. The frequency dependence of the M Double-Prime and dc conductivity is found to obey an Arrhenius law and the activation energy of the phlogopite mica calculated both from dc conductivity and the modulus spectrum is similar, indicating that same type of charge carriers are involved in the relaxation phenomena. The electric modulus and conductivity data have been fitted with the Havriliak-Negami function. Scaling of M Prime , M Double-Prime , ac conductivity has also been performed in order to obtain insight into the relaxation mechanisms. The scaling behaviour indicates that the relaxation describes the same mechanism at different temperatures. The relaxation mechanism was also examined using the Cole-Cole approach. The study elaborates that the investigation regarding the temperature and frequency dependence of dielectric relaxation in the phlogopite mica will be helpful for various cutting edge applications of this material in electrical engineering.

  12. Dielectric screening in semiconductors

    Science.gov (United States)

    Harrison, Walter A.; Klepeis, John E.

    1988-01-01

    Intra-atomic and interatomic Coulomb interactions are incorporated into bond-orbital theory, based upon universal tight-binding parameters, in order to treat the effects of charge redistribution in semiconductor bonds. The dielectric function ɛ(q) is obtained for wave numbers in a [100] direction. The screening of differences in average hybrid energy across a heterojunction is calculated in detail, indicating that the decay length for the potential depends upon the relative values of Madelung and intra-atomic Coulomb terms. The parameters used here predict an imaginary decay length and thus an oscillating potential near the interface. The same theory is applied to point defects by imbedding a cluster in a matrix lattice, taking charges in that lattice to be consistent with continuum theory. Illustrating the theory with a phosphorus impurity in silicon, it is seen that the impurity and its neighboring atoms have charges on the order of only one-tenth of an electronic charge, alternating in sign from neighbor to neighbor as for planar defects. Although there are shifts in the term values on the order of a volt, the difference in these shifts for neighboring atoms is much smaller so that the effect on the bonds is quite small. This behavior is analogous to the response of a dielectric continuum to a point charge: The medium is locally neutral except at the center of the cluster and there are slowly varying potentials e2/ɛr. Because of this slow variation, free-atom term values should ordinarily suffice for the calculation of bond properties and bond lengths at impurities. Corrections are larger for homovalent substitutions such as carbon in silicon.

  13. Dielectric Properties of Lead Monoxide Filled Unsaturated Polyester Based Polymer Composites

    Science.gov (United States)

    Harish, V.; Kumar, H. G. Harish; Nagaiah, N.

    2011-07-01

    Lead monoxide filled isophthalate resin particulate polymer composites were prepared with different filler concentrations and investigated for physical, thermal, mechanical and gamma radiation shielding characteristics. This paper discusses about the dielectric properties of the composites. The present study showed that the dielectric constant (ɛ'), dielectric loss (ɛ″) and ac conductivity (σac) of isopthalate based unsaturated polyester resin increases with the increase in wt% PbO filler in polymer matrix.

  14. Investigating compositional effects of atomic layer deposition ternary dielectric Ti-Al-O on metal-insulator-semiconductor heterojunction capacitor structure for gate insulation of InAlN/GaN and AlGaN/GaN

    Energy Technology Data Exchange (ETDEWEB)

    Colon, Albert; Stan, Liliana; Divan, Ralu; Shi, Junxia

    2016-11-01

    Gate insulation/surface passivation in AlGaN/GaN and InAlN/GaN heterojunction field-effect transistors is a major concern for passivation of surface traps and reduction of gate leakage current. However, finding the most appropriate gate dielectric materials is challenging and often involves a compromise of the required properties such as dielectric constant, conduction/valence band-offsets, or thermal stability. Creating a ternary compound such as Ti-Al-O and tailoring its composition may result in a reasonably good gate material in terms of the said properties. To date, there is limited knowledge of the performance of ternary dielectric compounds on AlGaN/GaN and even less on InAlN/GaN. To approach this problem, the authors fabricated metal-insulator-semiconductor heterojunction (MISH) capacitors with ternary dielectrics Ti-Al-O of various compositions, deposited by atomic layer deposition (ALD). The film deposition was achieved by alternating cycles of TiO2 and Al2O3 using different ratios of ALD cycles. TiO2 was also deposited as a reference sample. The electrical characterization of the MISH capacitors shows an overall better performance of ternary compounds compared to the pure TiO2. The gate leakage current density decreases with increasing Al content, being similar to 2-3 orders of magnitude lower for a TiO2:Al2O3 cycle ratio of 2:1. Although the dielectric constant has the highest value of 79 for TiO2 and decreases with increasing the number of Al2O3 cycles, it is maintaining a relatively high value compared to an Al2O3 film. Capacitance voltage sweeps were also measured in order to characterize the interface trap density. A decreasing trend in the interface trap density was found while increasing Al content in the film. In conclusion, our study reveals that the desired high-kappa properties of TiO2 can be adequately maintained while improving other insulator performance factors. The ternary compounds may be an excellent choice as a gate material for both

  15. Modeling and control of a dielectric elastomer actuator

    Science.gov (United States)

    Gupta, Ujjaval; Gu, Guo-Ying; Zhu, Jian

    2016-04-01

    The emerging field of soft robotics offers the prospect of applying soft actuators as artificial muscles in the robots, replacing traditional actuators based on hard materials, such as electric motors, piezoceramic actuators, etc. Dielectric elastomers are one class of soft actuators, which can deform in response to voltage and can resemble biological muscles in the aspects of large deformation, high energy density and fast response. Recent research into dielectric elastomers has mainly focused on issues regarding mechanics, physics, material designs and mechanical designs, whereas less importance is given to the control of these soft actuators. Strong nonlinearities due to large deformation and electromechanical coupling make control of the dielectric elastomer actuators challenging. This paper investigates feed-forward control of a dielectric elastomer actuator by using a nonlinear dynamic model. The material and physical parameters in the model are identified by quasi-static and dynamic experiments. A feed-forward controller is developed based on this nonlinear dynamic model. Experimental evidence shows that this controller can control the soft actuator to track the desired trajectories effectively. The present study confirms that dielectric elastomer actuators are capable of being precisely controlled with the nonlinear dynamic model despite the presence of material nonlinearity and electromechanical coupling. It is expected that the reported results can promote the applications of dielectric elastomer actuators to soft robots or biomimetic robots.

  16. Evaluation of Dielectric-Barrier-Discharge Actuator Substrate Materials

    Science.gov (United States)

    Wilkinson, Stephen P.; Siochi, Emilie J.; Sauti, Godfrey; Xu, Tian-Bing; Meador, Mary Ann; Guo, Haiquan

    2014-01-01

    A key, enabling element of a dielectric barrier discharge (DBD) actuator is the dielectric substrate material. While various investigators have studied the performance of different homogeneous materials, most often in the context of related DBD experiments, fundamental studies focused solely on the dielectric materials have received less attention. The purpose of this study was to conduct an experimental assessment of the body-force-generating performance of a wide range of dielectric materials in search of opportunities to improve DBD actuator performance. Materials studied included commonly available plastics and glasses as well as a custom-fabricated polyimide aerogel. Diagnostics included static induced thrust, electrical circuit parameters for 2D surface discharges and 1D volume discharges, and dielectric material properties. Lumped-parameter circuit simulations for the 1D case were conducted showing good correspondence to experimental data provided that stray capacitances are included. The effect of atmospheric humidity on DBD performance was studied showing a large influence on thrust. The main conclusion is that for homogeneous, dielectric materials at forcing voltages less than that required for streamer formation, the material chemical composition appears to have no effect on body force generation when actuator impedance is properly accounted for.

  17. Charge regulation and local dielectric function in planar polyelectrolyte brushes.

    Science.gov (United States)

    Kumar, Rajeev; Sumpter, Bobby G; Kilbey, S Michael

    2012-06-21

    Understanding the effect of inhomogeneity on the charge regulation and dielectric properties, and how it depends on the conformational characteristics of the macromolecules is a long-standing problem. In order to address this problem, we have developed a field-theory to study charge regulation and local dielectric function in planar polyelectrolyte brushes. The theory is used to study a polyacid brush, which is comprised of chains end-grafted at the solid-fluid interface, in equilibrium with a bulk solution containing monovalent salt ions, solvent molecules, and pH controlling acid. In particular, we focus on the effects of the concentration of added salt and pH of the bulk in determining the local charge and dielectric function. Our theoretical investigations reveal that the dipole moment of the ion-pairs formed as a result of counterion adsorption on the chain backbones play a key role in affecting the local dielectric function. For polyelectrolytes made of monomers having dipole moments lower than the solvent molecules, dielectric decrement is predicted inside the brush region. However, the formation of ion-pairs (due to adsorption of counterions coming from the dissociation of added salt) more polar than the solvent molecules is shown to increase the magnitude of the dielectric function with respect to its bulk value. Furthermore, an increase in the bulk salt concentration is shown to increase the local charge inside the brush region.

  18. Low-voltage Organic Thin Film Transistors (OTFTs) with Solution-processed High-k Dielectric cum Interface Engineering

    Science.gov (United States)

    Su, Yaorong

    Although impressive progress has been made in improving the performance of organic thin film transistors (OTFTs), the high operation voltage resulting from the low gate areal capacitance of traditional SiO 2 remains a severe limitation that hinders OTFTs' development in practical applications. In this regard, developing new materials with high- k characteristics at low cost is of great scientific and technological importance in the area of both academia and industry. In this thesis, we first describe a simple solution-based method to fabricate a high-k bilayer Al2Oy/TiOx (ATO) dielectric system at low temperature. Then the dielectric properties of the ATO are characterized and discussed in detail. Furthermore, by employing the high-k ATO as gate dielectric, low-voltage copper phthalocyanine (CuPc) based OTFTs are successfully developed. Interestingly, the obtained low-voltage CuPc TFT exhibits outstanding electrical performance, which is even higher than the device fabricated on traditional low-k SiO2. The above results seem to be contradictory to the reported results due to the fact that high-k usually shows adverse effect on the device performance. This abnormal phenomenon is then studied in detail. Characterization on the initial growth shows that the CuPc molecules assemble in a "rod-like" nano crystal with interconnected network on ATO, which probably promotes the charge carrier transport, whereas, they form isolated small islands with amorphous structure on SiO2. In addition, a better metal/organic contact is observed on ATO, which benefits the charge carrier injection. Our studies suggest that the low-temperature, solution-processed high-k ATO is a promising candidate for fabrication of high-performance, low-voltage OTFTs. Furthermore, it is well known that the properties of the dielectric/semiconductor and electrode/semiconductor interfaces are crucial in controlling the electrical properties of OTFTs. Hence, investigation the effects of interfaces

  19. Towards all-dielectric metamaterials and nanophotonics

    CERN Document Server

    Krasnok, Alexander; Petrov, Mikhail; Savelev, Roman; Belov, Pavel; Kivshar, Yuri

    2015-01-01

    We review a new, rapidly developing field of all-dielectric nanophotonics which allows to control both magnetic and electric response of structured matter by engineering the Mie resonances in high-index dielectric nanoparticles. We discuss optical properties of such dielectric nanoparticles, methods of their fabrication, and also recent advances in all-dielectric metadevices including couple-resonator dielectric waveguides, nanoantennas, and metasurfaces.

  20. Dielectric inspection of erythrocyte morphology

    Science.gov (United States)

    Hayashi, Yoshihito; Oshige, Ikuya; Katsumoto, Yoichi; Omori, Shinji; Yasuda, Akio; Asami, Koji

    2008-05-01

    We performed a systematic study of the sensitivity of dielectric spectroscopy to erythrocyte morphology. Namely, rabbit erythrocytes of four different shapes were prepared by precisely controlling the pH of the suspending medium, and their complex permittivities over the frequency range from 0.1 to 110 MHz were measured and analyzed. Their quantitative analysis shows that the characteristic frequency and the broadening parameter of the dielectric relaxation of interfacial polarization are highly specific to the erythrocyte shape, while they are insensitive to the cell volume fraction. Therefore, these two dielectric parameters can be used to differentiate erythrocytes of different shapes, if dielectric spectroscopy is applied to flow-cytometric inspection of single blood cells. In addition, we revealed the applicability and limitations of the analytical theory of interfacial polarization to explain the experimental permittivities of non-spherical erythrocytes.

  1. Electromagnetic identification of dielectric materials

    Directory of Open Access Journals (Sweden)

    A. F. Yanenko

    2010-05-01

    Full Text Available The electromagnetic features and parameters of dielectric materials, which are used in light industry and stomatology. The results of measuring are analyzed and the method of authentication is offered.

  2. Dielectric Spectroscopy in Biomaterials: Agrophysics

    Directory of Open Access Journals (Sweden)

    Dalia El Khaled

    2016-04-01

    Full Text Available Being dependent on temperature and frequency, dielectric properties are related to various types of food. Predicting multiple physical characteristics of agri-food products has been the main objective of non-destructive assessment possibilities executed in many studies on horticultural products and food materials. This review manipulates the basic fundamentals of dielectric properties with their concepts and principles. The different factors affecting the behavior of dielectric properties have been dissected, and applications executed on different products seeking the characterization of a diversity of chemical and physical properties are all pointed out and referenced with their conclusions. Throughout the review, a detailed description of the various adopted measurement techniques and the mostly popular equipment are presented. This compiled review serves in coming out with an updated reference for the dielectric properties of spectroscopy that are applied in the agrophysics field.

  3. Novel dielectric elastomer structure of soft robot

    Science.gov (United States)

    Li, Chi; Xie, Yuhan; Huang, Xiaoqiang; Liu, Junjie; Jin, Yongbin; Li, Tiefeng

    2015-04-01

    Inspired from the natural invertebrates like worms and starfish, we propose a novel elastomeric smart structure. The smart structure can function as a soft robot. The soft robot is made from a flexible elastomer as the body and driven by dielectric elastomer as the muscle. Finite element simulations based on nonlinear field theory are conducted to investigate the working condition of the structure, and guide the design of the smart structure. The effects of the prestretch, structural stiffness and voltage on the performance of the smart structure are investigated. This work can guide the design of soft robot.

  4. Bound Modes in Dielectric Microcavities

    CERN Document Server

    Visser, P M; Lenstra, D

    2002-01-01

    We demonstrate how exactly bound cavity modes can be realized in dielectric structures other than 3d photonic crystals. For a microcavity consisting of crossed anisotropic layers, we derive the cavity resonance frequencies, and spontaneous emission rates. For a dielectric structure with dissipative loss and central layer with gain, the beta factor of direct spontaneous emission into a cavity mode and the laser threshold is calculated.

  5. The Influence of Free Water Content on Dielectric Properties of Alkali Active Slag Cement Paste

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    The dielectric performance of alkali activated slag (AAS) cement paste was investigated in the frequency range of 1 to 1000 MHz. The experimental results showed the unstable dielectric properties of harden paste were mostly influenced by the fraction of free water in paste or absorbed water from ambient, but not including hydration water and microstructure. The free water was completely eliminated by heat treatment at 105 ℃ about 4 hours, and then its dielectric loss was depressed; but with the exposure time in air increasing,the free water adsorption in ambient air made the dielectric property of harden cement paste to be bad. The temperature and relative humidity of environment was the key factors of free water adsorption; hence, if the influence of free water on dielectric constant was measured or eliminated, the cement-based materials may be applied in humidity sensitive materials or dielectric materials domains.

  6. Dielectric properties of ligand-modified gold nanoparticles/SU-8 photopolymer based nanocomposites

    KAUST Repository

    Toor, Anju

    2017-04-15

    This article reports the enhanced dielectric properties of a photodefinable nanocomposite material containing sub–10 nm coated metal nanoparticles (NPs). The surface morphology of the synthesized dodecanethiol-functionalized gold NPs was characterized using the transmission electron microscopy (TEM). We investigated the particle agglomeration and dispersion during the various stages of the nanocomposite synthesis using TEM. Physical properties such as dielectric permittivity and dielectric loss were measured experimentally. The dependence of dielectric permittivity and loss tangent on particle concentration and frequency was studied. Nanocomposite films showed an approximately three times enhancement in average dielectric constant over the polymer base value and an average dielectric loss of 0.09 at 1 kHz, at a filler loading of 10% w/w.

  7. TECHNICAL NOTE: Dielectric and piezoelectric properties of piezoelectric ceramic sulphoaluminate cement composites

    Science.gov (United States)

    Cheng, Xin; Huang, Shifeng; Chang, Jun; Lu, Lingchao; Liu, Futian; Ye, Zengmao; Wang, Shoude

    2005-10-01

    Using cement as the matrix of piezoelectric smart composites can solve the problem of mismatch of smart composites and concrete structure in civil engineering. 0 3 cement based piezoelectric composites were fabricated by a compression technique using PMN and sulphoaluminate cement as raw materials. The influence of the PMN content on the dielectric and piezoelectric properties of the composites was investigated. The temperature dependence of the dielectric properties of the composites was discussed in detail. The results indicate that the dielectric constants are almost constant in the temperature range from -30 to 50 °C, which shows excellent dielectric temperature stability. With increasing PMN content, the piezoelectric and dielectric properties of the composites increase. The theoretical values of the dielectric constants show good agreement with the experimental values for the composites.

  8. Fermi level pinning effects at gate-dielectric interfaces influenced by interface state densities

    Institute of Scientific and Technical Information of China (English)

    洪文婷; 韩伟华; 吕奇峰; 王昊; 杨富华

    2015-01-01

    The dependences of Fermi-level pinning on interface state densities for the metal–dielectric, ploycrystalline silicon–dielectric, and metal silicide–dielectric interfaces are investigated by calculating their effective work functions and their pinning factors. The Fermi-level pinning factors and effective work functions of the metal–dielectric interface are observed to be more susceptible to the increasing interface state densities, differing significantly from that of the ploycrystalline silicon–dielectric interface and the metal silicide–dielectric interface. The calculation results indicate that metal silicide gates with high-temperature resistance and low resistivity are a more promising choice for the design of gate materials in metal-oxide semiconductor (MOS) technology.

  9. Thermal Experimental Analysis for Dielectric Characterization of High Density Polyethylene Nanocomposites

    Directory of Open Access Journals (Sweden)

    Ahmed Thabet Mohamed

    2016-01-01

    Full Text Available The importance of nanoparticles in controlling physical properties of polymeric nanocomposite materials leads us to study effects of these nanoparticles on electric and dielectric properties of polymers in industry In this research, the dielectric behaviour of High-Density Polyethylene (HDPE nanocomposites materials that filled with nanoparticles of clay or fumed silica has been investigated at various frequencies (10 Hz-1 kHz and temperatures (20-60°C. Dielectric spectroscopy has been used to characterize ionic conduction, then, the effects of nanoparticles concentration on the dielectric losses and capacitive charge of the new nanocomposites can be stated. Capacitive charge and loss tangent in high density polyethylene nanocomposites are measured by dielectric spectroscopy. Different dielectric behaviour has been observed depending on type and concentration of nanoparticles under variant thermal conditions.

  10. Attosecond clocking of scattering dynamics in dielectrics

    Science.gov (United States)

    Kling, Matthias

    2016-05-01

    In the past few years electronic-device scaling has progressed rapidly and miniaturization has reached physical gate lengths below 100 nm, heralding the age of nanoelectronics. Besides the effort in size scaling of integrated circuits, tremendous progress has recently been made in increasing the switching speed where strong-field-based ``dielectric-electronics'' may push it towards the petahertz frontier. In this contest, the investigation of the electronic collisional dynamics occurring in a dielectric material is of primary importance to fully understand the transport properties of such future devices. Here, we demonstrate attosecond chronoscopy of electron collisions in SiO2. In our experiment, a stream of isolated aerodynamically focused SiO2 nanoparticles of 50 nm diameter was delivered into the laser interaction region. Photoemission is initiated by an isolated 250 as pulse at 35 eV and the electron dynamics is traced by attosecond streaking using a delayed few-cycle laser pulse at 700 nm. Electrons were detected by a kilohertz, single-shot velocity-map imaging spectrometer, permitting to separate frames containing nanoparticle signals from frames containing the response of the reference gas only. We find that the nanoparticle photoemission exhibits a positive temporal shift with respect to the reference. In order to understand the physical origin of the shift we performed semi-classical Monte-Carlo trajectory simulations taking into account the near-field distributions in- and outside the nanoparticles as obtained from Mie theory. The simulations indicate a pronounced dependence of the streaking time shift near the highest measured electron energies on the inelastic scattering time, while elastic scattering only shows a small influence on the streaking time shift for typical dielectric materials. We envision our approach to provide direct time-domain access to inelastic scattering for a wide range of dielectrics.

  11. Polyimide/nanosized CaCu3Ti4O12 functional hybrid films with high dielectric permittivity

    Science.gov (United States)

    Yang, Yang; Zhu, Ben-Peng; Lu, Zhi-Hong; Wang, Zi-Yu; Fei, Chun-Long; Yin, Di; Xiong, Rui; Shi, Jing; Chi, Qing-Guo; Lei, Qing-Quan

    2013-01-01

    This work reports the high dielectric permittivity of polyimide (PI) embedded with CaCu3Ti4O12 (CCTO) nanoparticles. The dielectric behavior has been investigated over a frequency of 100 Hz-1 MHz. High dielectric permittivity (ɛ = 171) and low dielectric loss (tan δ = 0.45) at 100 Hz have been observed near the percolation threshold. The experimental results fit well with the Percolation theory. We suggest that the high dielectric permittivity originates from the large interface area and the remarkable Maxwell-Wagner-Sillars effect at percolation in which nomadic charge carriers are blocked at internal interfaces between CCTO nanoparticles and the polyimide matrix.

  12. Dielectric Properties of Water in Butter and Water-AOT-Heptane Systems Measured using Terahertz Time-Domain Spectroscopy

    DEFF Research Database (Denmark)

    Møller, Uffe; Folkenberg, Jacob Riis; Jepsen, Peter Uhd

    2010-01-01

    We investigate the dielectric properties of water confined in nanometer-sized inverse micelles in mixtures of water, AOT, and heptane. We show that the dielectric properties of the confined water are dependent on the water pool size and different from those of bulk water. We also discuss the diel...... the dielectric properties of different vegetable oils, lard, and butter, and use these properties to deduce the dielectric properties of water in butter, which are shown to deviate significantly from the dielectric properties of bulk water....

  13. Phases confirmation of cloudy Silwet L-77 aqueous solution by dielectric relaxation spectroscopy

    Institute of Scientific and Technical Information of China (English)

    Wei

    2010-01-01

    The phase transition of Silwet L-77 (a kind of siloxane surfactant) dilute aqueous solution with temperature was investigated by dielectric relaxation spectroscopy. In the initial heating process, a dielectric relaxation was found at about 106 Hz, which was considered as the interface polarization ascribed to the interface between water and liquid phases (Wand L1). With the temperature increasing further, a new dielectric relaxation was observed at about 104 Hz, which was assigned to the appearance of liquid crystal phase (Lα). According to the dielectric parameters fitted by Cole-Cole equation, the coexistence temperature of W, L1 and Lα was determined at about 37.0℃.

  14. Abnormal dielectric characteristics of PMN-32% PT single crystal under dc bias

    Institute of Scientific and Technical Information of China (English)

    XI Zengzhe; LI Zhenrong; XU Zhuo; ZHANG Liangying; YAO Xi

    2003-01-01

    The dielectric properties and phase transition behavior of the [001] and [111] oriented PMN-32%PT single crystal under the different dc bias (E) have been investigated as a function of temperatures. Under the application of dc bias ranging from 1.5 to 4.0 kV/cm, the dielectric spectrum of a [001] oriented single crystal showed an abnormal dielectric peak within the rhombic phase-stable temperature range.However, this peak disappeared at E>4.0 kV/cm and was not yet found in the [111] oriented single crystal. The abnormal dielectric peak was attributed to the filed-induced phase transition.

  15. Dielectric spectroscopy for evaluating dry matter content of potato tubers

    DEFF Research Database (Denmark)

    Gunner Brink Nielsen, Glenn; Kjær, Anders; Klösgen, Beate

    2016-01-01

    The present study investigated the application of dielectric spectroscopy as a method for evaluating the dry matter content of potato tubers. Sample specific factors determining the precision of this application were investigated by studying the prediction of the dry material content in agar gel...... based model systems with known dry matter content. Dielectric spectra were measured with a large custom-made open-ended coaxial probe in the frequency interval from 0.01 GHz to 3 GHz. Both univariate linear models motivated by a two phase mixture model and cross-validated multivariate partial least...... squares regression (PLSR) models were applied to predict the dry matter content. Results showed that the PLSR models gave markedly better prediction of the dry matter content from the dielectric response in most of the investigated systems compared to the univariate linear models. The highest precision...

  16. Capacitance characteristics of low-k low-cost CVD grown polyimide liner for high-density Cu through-Si-via in three-dimensional LSI

    Science.gov (United States)

    Mariappan, Murugesan; Fukushima, Takafumi; Bea, Ji-Chel; Hashimoto, Hiroyuki; Koyanagi, Mitsumasa

    2016-04-01

    Minimization of the parasitic capacitance arising from Cu-through-Si-vias (TSVs) has been rigorously considered in order to enhance the performances of three-dimensional (3D) LSIs. We have systematically investigated the role of chemical vapor deposited (CVD) polyimide (PI) liner in Cu-TSVs in reducing the TSV capacitance. It is confirmed that CVD grown PI greatly helps to reduce the TSV capacitance as compared to the conventional PECVD-SiO2 liner. In addition to that the presence of very small hysteresis and a negligible flat-band voltage shift along the voltage axis confirms the suitability of PI liner as dielectric in the Cu-TSVs, if it were operated below the bias voltages of ±20 V. In over all, the large reduction in capacitance along with the conformal deposition of PI in the TSVs having less than 3 µm-width with aspect ratios greater than 10 reveals that CVD grown PI has the potential application in the future 3D-LSIs with highly scaled TSV.

  17. Alternative Gate Dielectrics on Semiconductors for MOSFET Device Applications

    Energy Technology Data Exchange (ETDEWEB)

    Norton, D.P.; Budai, J.D.; Chisholm, M.F.; Pennycook, S.J.; McKee, R.; Walker, F.; Lee, Y.; Park, C.

    1999-12-06

    We have investigated the synthesis and properties of deposited oxides on Si and Ge for use as alternative gate dielectrics in MOSFET applications. The capacitance and leakage current behavior of polycrystalline Y{sub 2}O{sub 3} films synthesized by pulsed-laser deposition is reported. In addition, we also discuss the growth of epitaxial oxide structures. In particular, we have investigated the use of silicide termination for oxide growth on (001) Si using laser-molecular beam epitaxy. In addition, we discuss a novel approach involving the use of hydrogen to eliminate native oxide during initial dielectric oxide nucleation on (001) Ge.

  18. The restoring force on a dielectric in a parallel plate capacitor

    Science.gov (United States)

    Staunton, L. P.

    2014-09-01

    We investigate the restoring force on a dielectric slab being pulled from within the volume of a parallel plate capacitor connected to a battery. Using a conformal mapping to treat the fringing electric field exactly, we numerically obtain an expected Hooke's Law restoring force for small displacements, and a diminishing force for a displacement up to half the length of the dielectric.

  19. Exploring dielectric elastomers as actuators for hand tremor suppression

    Science.gov (United States)

    Kelley, Christopher R.; Kauffman, Jeffrey L.

    2017-04-01

    Pathological tremor results in undesired motion of body parts, with the greatest effect typically occurring in the hands. Since common treatment methods are ineffective in some patients or have risks associated with surgery or side effects, researchers are investigating mechanical means of tremor suppression. This work explores the viability of dielectric elastomers as the actuators in a tremor suppression control system. Dielectric elastomers have many properties similar to human muscle, making them a natural fit for integration into the human biomechanical system. This investigation develops a model of the integrated wrist-actuator system to determine actuator parameters that produce the necessary control authority without significantly affecting voluntary motion. Furthermore, this paper develops a control law for the actuator voltage to increase the effective viscous damping of the system. Simulations show excellent theoretical tremor suppression, demonstrating the potential for dielectric elastomers to suppress tremor while maximizing compatibility between the actuator and the human body.

  20. Electrical, optical and dielectric properties of HCl doped polyaniline nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Chutia, P.; Kumar, A., E-mail: ask@tezu.ernet.in

    2014-03-01

    In this report we have investigated the optical, electrical and dielectric properties of HCl doped polyaniline nanorods synthesized by the interfacial polymerization technique. High resolution transmission electron microscope (HRTEM) micrographs confirm the formation of nanorods. X-ray diffraction pattern shows the semicrystalline nature of polyaniline nanorods with a diameter distribution in the range of 10–22 nm. The chemical and electronic structures of the polyaniline nanorods are investigated by micro-Raman and UV–vis spectroscopy. Dielectric relaxation spectroscopy has been applied to study the dielectric permittivity, modulus formalism and ac conductivity as a function of frequency and temperature. The ac conductivity follows a power law with frequency. The variation of frequency exponent with temperature suggests that the correlated barrier hopping is the dominant charge transport mechanism. The existence of both polaron and bipolaron in the transport mechanism has been confirmed from the binding energy calculations.

  1. Features of dielectric response in PMN-PT ferroelectric ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Guerra, J D S [Grupo de Ferroeletricos e Materiais Multifuncionais, Instituto de Fisica, Universidade Federal de Uberlandia, 38400-902 Uberlandia-MG (Brazil); Araujo, E B; Guarany, C A; Reis, R N; Lima, E C [Grupo Ferroeletricos e Novos Materiais, Departamento de Fisica e Quimica, Universidade Estadual Paulista, 15385-000 Ilha Solteira-SP (Brazil)], E-mail: santos@dfq.feis.unesp.br

    2008-11-21

    In this paper, electrical and structural properties were reported for pyrochlore free (1 - x)[Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}] - xPbTiO{sub 3} (PMN-PT) (with 35 mol% PbTiO{sub 3}) ceramics obtained from fine powders. Dielectric studies were focused on the investigation of the complex dielectric permittivity ({epsilon}' - i{epsilon}'') as a function of frequency and temperature. The effects of the dc applied electric field on dielectric response were also investigated. Results revealed a field dependence dielectric anomaly in the dielectric permittivity curves ({epsilon}(T)) in the low dc electric field region, which in turn prevails in the whole analysed frequency interval. To the best of our knowledge, these properties for the PMN-PT ceramic system have not been reported before as in this work. The results were analysed within the framework of the current models found in the literature.

  2. Microwave dielectric properties of lanthanum based complex perovskites

    Energy Technology Data Exchange (ETDEWEB)

    Nath, Masood A.; Samal, Saroj L. [Department of Chemistry, Indian Institute of Technology, Delhi, Hauz Khas, New Delhi 110 016 (India); Obulesu, K. Rama; Raju, K.C. James [School of Physics, University of Hyderabad, Hyderabad 500 046 (India); Ganguli, Ashok K., E-mail: ashok@chemistry.iitd.ernet.in [Department of Chemistry, Indian Institute of Technology, Delhi, Hauz Khas, New Delhi 110 016 (India)

    2014-12-05

    Highlights: • Three new series of oxides with formula La{sub 2}BaTi{sub 2}M{sub 1−x}Cu{sub x}O{sub 9}, (M = Mg, Zn and Cd) have been synthesized by solid state method. • Such materials exhibit low loss and are used as resonators in wireless communication devices. • Detailed morphological studies and density measurements have confirmed the dielectric data. - Abstract: The present investigation discusses the synthesis and dielectric properties of three series of oxides of the formula La{sub 2}BaTi{sub 2}M{sub 1−x}Cu{sub x}O{sub 9} (where M = Mg, Zn and Cd). The reactions have been carried out via solid state method and all the compositions crystallize in the disordered cubic perovskite structure. Suitable substitution at both A and B sites lead to enhancement in the dielectric properties at high frequencies. The relative permittivity and loss tangent have been measured at X-band (8.2–12.4 GHz) and Ku-band (12.4–18 GHz) frequencies. The oxides show a dielectric constant of 20–30 while the dielectric loss is quite low in the order of 10{sup −3}–10{sup −4} (at 500 kHz) and 10{sup −2} at X and Ku-band. There is scope for further investigations in these systems to realize useful materials for microwave applications.

  3. Microwave measurement and modeling of the dielectric properties of vegetation

    Science.gov (United States)

    Shrestha, Bijay Lal

    Some of the important applications of microwaves in the industrial, scientific and medical sectors include processing and treatment of various materials, and determining their physical properties. The dielectric properties of the materials of interest are paramount irrespective of the applications, hence, a wide range of materials covering food products, building materials, ores and fuels, and biological materials have been investigated for their dielectric properties. However, very few studies have been conducted towards the measurement of dielectric properties of green vegetations, including commercially important plant crops such as alfalfa. Because of its high nutritional value, there is a huge demand for this plant and its processed products in national and international markets, and an investigation into the possibility of applying microwaves to improve both the net yield and quality of the crop can be beneficial. Therefore, a dielectric measurement system based upon the probe reflection technique has been set up to measure dielectric properties of green plants over a frequency range from 300 MHz to 18 GHz, moisture contents from 12%, wet basis to 79%, wet basis, and temperatures from -15°C to 30°C. Dielectric properties of chopped alfalfa were measured with this system over frequency range of 300 MHz to 18 GHz, moisture content from 11.5%, wet basis, to 73%, wet basis, and density over the range from 139 kg m-3 to 716 kg m-3 at 23°C. The system accuracy was found to be +/-6% and +/-10% in measuring the dielectric constant and loss factor respectively. Empirical, semi empirical and theoretical models that require only moisture content and operating frequency were determined to represent the dielectric properties of both leaves and stems of alfalfa at 22°C. The empirical models fitted the measured dielectric data extremely well. The root mean square error (RMSE) and the coefficient of determination (r2) for dielectric constant and loss factor of leaves

  4. Temperature and moisture dependence of the dielectric properties of silica sand.

    Science.gov (United States)

    Liu, Chenhui; Zhang, Libo; Peng, Jinhui; Srinivasakannan, Chandrasekar; Liu, Bingguo; Xia, Hongying; Zhou, Junwen; Xu, Lei

    2013-01-01

    The major objective of this work was to investigate the effects of temperature and moisture content on the dielectric properties of silica sand. The dielectric properties of moist silica sand at five temperatures between 20 to 100 degrees C, covering different moisture content levels at a frequency of 2.45 GHz, were measured with an open-ended coaxial probe dielectric measurement system. The wave penetration depth was calculated based on the measured dielectric data. The results show moisture content to be the major influencing factor for the variation of dielectric properties. Dielectric constant, loss factor and loss tangent all increase linearly with increasing moisture content. Three predictive empirical models were developed to relate the dielectric constant, loss factor, loss tangent of silica sand as a linear function of moisture content. An increase in temperature between 20 to 100 degrees C was found to increase the dielectric constant and loss factor. The penetration depth decreased with increase in moisture content and temperature. Variation in penetration depth was found to vary linearly with decrease in moisture content. An predictive empirical model was developed to calculate penetration depth for silica sand. This study offers useful information on dielectric properties of silica sand for developing microwave drying applications in mineral processing towards designing better microwave sensors for measuring silica sand moisture content.

  5. Influence of HF catalyst on the microstructure properties of ultra low-k thin films prepared by sol-gel method

    Institute of Scientific and Technical Information of China (English)

    He Zhi-Wei; Xu Da-Yin; Jiang Xiang-Hua; Wang Yin-Yue

    2008-01-01

    This paper reports that by using the hydrofluoric acid (HF) as the acid catalyst, F doped nanoporous low-k SiO2 thin films have been prepared by means of sol-gel method. The characterization of atomic force microscopy and Fourier transform infrared spectroscopy demonstrates that the HF catalyzed films are more hydrophobic. The N2 adsorption/desorption experiments show that the suited introduction of HF increases the porosity and decreases the pore size distribution (about 10 nm) in the films. The above results indicate that the hydrofluoric acid is the more suitable acid catalyst than the hydrochloric one for preparing nanoporous ultra low-k SiO2 thin films.

  6. Electrical breakdown phenomena of dielectric elastomers

    DEFF Research Database (Denmark)

    Yu, Liyun; Mateiu, Ramona Valentina; Skov, Anne Ladegaard

    years. However, optimization with respect to the dielectric permittivity solely may lead to other problematic phenomena such as premature electrical breakdown. In this work, we focus on the chloro propyl functionalized silicone elastomers prepared in Madsen et al[2] and we investigate the electrical...... breakdown patterns of two similar chloro propyl functionalized silicone elastomers which break down electrically in a rather different way as well as we compare them to a silicone based reference. Scanning Electron Microscopy (SEM) and Energy Dispersive X-Ray Spectroscopy (EDS) are used to evaluate...... the elastomers after electrical breakdown....

  7. Transfer Matrix for Fibonacci Dielectric Superlattice

    Institute of Scientific and Technical Information of China (English)

    蔡祥宝

    2001-01-01

    The transfer matrices, which transfer the amplitudes of the electric fields of second- and third-harmonic waves from one side of the interface to the other, are defined for layers joined coherently, and the total transfer matrices for several sequential interfaces can be simply obtained by multiplication of the matrices. Using the transfer matrix method, the interacting processes of second- and third-harmonic waves in a one-dimensional finite Fibonacci dielectric superlattice are investigated. Applying the numerical procedure described in this letter, the dependence of the second- and third-harmonic fields on sample thickness is obtained. The numerical results agree with the quasi-phase-matching theory.

  8. High-Dielectric-Constant Silver-Epoxy Composites as Embedded Dielectrics

    Energy Technology Data Exchange (ETDEWEB)

    Qi, Lai; Lee, Burtrand I.; Chen, Sihai; Samuels, William D.; Exarhos, Gregory J.

    2005-07-08

    We report the synthesis of an epoxy-based composite containing randomly distributed silver nanoparticles with a narrow size distribution centered around 40nm. The surface of the Ag nanoparticles is coated with a thin layer of mercaptosuccinic acid (MSA) in order to promote formation of the Ag-epoxy while retaining flexibility of the polymer matrix. This composite is the basis of a prototype capacitor formed by spin coating the synthesized Ag-epoxy (40nm Ag) mixture onto a gold-deposited aluminum substrate. A series of Ag-epoxy composites with various Ag volume fractions was investigated in order to determine the composition associated with optimum capacitor performance. The high dielectric constant (> 300) and relatively low dielectric loss (<0.05) render this material of promising potential for embedded capacitor applications.

  9. SU-8 as Hydrophobic and Dielectric Thin Film in Electrowetting-on-Dielectric Based Microfluidics Device

    Directory of Open Access Journals (Sweden)

    Vijay Kumar

    2012-01-01

    Full Text Available Electrowetting-on-dielectric (EWOD based droplet actuation in microfluidic chip is designed and fabricated. EWOD is used as on-chip micro-pumping scheme for moving fluid digitally in Lab-on-a-chip devices. For enabling this scheme, stacked deposition of thin dielectric and hydrophobic layer in that order between microchannel and electrodes is done. The present paper investigates the potential use of SU-8 as hydrophobic layer in conjunction of acting as dielectric in the device. The objective for the investigation is to lower the cost and a thin simplification in fabrication process of EWOD-based devices. We have done design and optimization of dimensions of electrode array including gap between arrays for EWOD micropump. Design and optimization are carried out in CoventorWare. The designing is followed by fabrication of device and analysis for droplet motion. The fabrication of the device includes array of electrodes over the silicon surface and embedding them in hydrophobic SU-8 layer. Water droplet movement in the order of microliter of spherical shape is demonstrated. It has been shown that an SU-8 microchannel in the current design allows microfluidic flow at tens of voltages comparable with costlier and more complicated to fabricate designs reported in the literature.

  10. High permittivity gate dielectric materials

    CERN Document Server

    2013-01-01

    "The book comprehensively covers all the current and the emerging areas of the physics and the technology of high permittivity gate dielectric materials, including, topics such as MOSFET basics and characteristics, hafnium-based gate dielectric materials, Hf-based gate dielectric processing, metal gate electrodes, flat-band and threshold voltage tuning, channel mobility, high-k gate stack degradation and reliability, lanthanide-based high-k gate stack materials, ternary hafnia and lanthania based high-k gate stack films, crystalline high-k oxides, high mobility substrates, and parameter extraction. Each chapter begins with the basics necessary for understanding the topic, followed by a comprehensive review of the literature, and ultimately graduating to the current status of the technology and our scientific understanding and the future prospects."

  11. Materials Fundamentals of Gate Dielectrics

    CERN Document Server

    Demkov, Alexander A

    2006-01-01

    This book presents materials fundamentals of novel gate dielectrics that are being introduced into semiconductor manufacturing to ensure the continuous scalling of the CMOS devices. This is a very fast evolving field of research so we choose to focus on the basic understanding of the structure, thermodunamics, and electronic properties of these materials that determine their performance in device applications. Most of these materials are transition metal oxides. Ironically, the d-orbitals responsible for the high dielectric constant cause sever integration difficulties thus intrinsically limiting high-k dielectrics. Though new in the electronics industry many of these materials are wel known in the field of ceramics, and we describe this unique connection. The complexity of the structure-property relations in TM oxides makes the use of the state of the art first-principles calculations necessary. Several chapters give a detailed description of the modern theory of polarization, and heterojunction band discont...

  12. Leaky Modes of Dielectric Cavities

    CERN Document Server

    Mansuripur, Masud; Jakobsen, Per

    2016-01-01

    In the absence of external excitation, light trapped within a dielectric medium generally decays by leaking out (and also by getting absorbed within the medium). We analyze the leaky modes of a parallel-plate slab, a solid glass sphere, and a solid glass cylinder, by examining those solutions of Maxwell's equations (for dispersive as well as non-dispersive media) which admit of a complex-valued oscillation frequency. Under certain circumstances, these leaky modes constitute a complete set into which an arbitrary distribution of the electromagnetic field residing inside a dielectric body can be expanded. We provide completeness proofs, and also present results of numerical calculations that illustrate the relationship between the leaky modes and the resonances of dielectric cavities formed by a simple parallel-plate slab, a glass sphere, and a glass cylinder.

  13. Dielectric Bow-tie Nanocavity

    CERN Document Server

    Lu, Qijing; Zou, Chang-Ling

    2013-01-01

    We propose a novel dielectric bow-tie nanocavity consisting of two tip-to-tip opposite triangle semiconductor nanowires, whose end faces are coated by silver nanofilms. Based on the advantages of the dielectric slot and tip structures, and the high reflectivity from the silver mirror, light can be confined in this nanocavity with low loss. We demonstrate that the mode excited in this nanocavity has a deep subwavelength mode volume of 2.8*10^-4 um3 and a high quality factor of 4.9*10^4 (401.3), consequently an ultrahigh Purcell factor of 1.6*10^7 (1.36*10^5), at 4.5 K (300 K) around the resonance wavelength of 1550 nm. This dielectric bow-tie nanocavity may find applications for integrated nanophotonic circuits, such as high-efficiency single photon source, thresholdless nanolaser, and cavity QED strong coupling experiments.

  14. On the Modeling of Polar Component of Solvation Energy using Smooth Gaussian-Based Dielectric Function.

    Science.gov (United States)

    Li, Lin; Li, Chuan; Alexov, Emil

    2014-05-01

    Traditional implicit methods for modeling electrostatics in biomolecules use a two-dielectric approach: a biomolecule is assigned low dielectric constant while the water phase is considered as a high dielectric constant medium. However, such an approach treats the biomolecule-water interface as a sharp dielectric border between two homogeneous dielectric media and does not account for inhomogeneous dielectric properties of the macromolecule as well. Recently we reported a new development, a smooth Gaussian-based dielectric function which treats the entire system, the solute and the water phase, as inhomogeneous dielectric medium (J Chem Theory Comput. 2013 Apr 9; 9(4): 2126-2136.). Here we examine various aspects of the modeling of polar solvation energy in such inhomogeneous systems in terms of the solute-water boundary and the inhomogeneity of the solute in the absence of water surrounding. The smooth Gaussian-based dielectric function is implemented in the DelPhi finite-difference program, and therefore the sensitivity of the results with respect to the grid parameters is investigated, and it is shown that the calculated polar solvation energy is almost grid independent. Furthermore, the results are compared with the standard two-media model and it is demonstrated that on average, the standard method overestimates the magnitude of the polar solvation energy by a factor 2.5. Lastly, the possibility of the solute to have local dielectric constant larger than of a bulk water is investigated in a benchmarking test against experimentally determined set of pKa's and it is speculated that side chain rearrangements could result in local dielectric constant larger than 80.

  15. Capacitive Cells for Dielectric Constant Measurement

    Science.gov (United States)

    Aguilar, Horacio Munguía; Maldonado, Rigoberto Franco

    2015-01-01

    A simple capacitive cell for dielectric constant measurement in liquids is presented. As an illustrative application, the cell is used for measuring the degradation of overheated edible oil through the evaluation of their dielectric constant.

  16. Capacitive Cells for Dielectric Constant Measurement

    Science.gov (United States)

    Aguilar, Horacio Munguía; Maldonado, Rigoberto Franco

    2015-01-01

    A simple capacitive cell for dielectric constant measurement in liquids is presented. As an illustrative application, the cell is used for measuring the degradation of overheated edible oil through the evaluation of their dielectric constant.

  17. Extinction by the long dielectric needles

    CERN Document Server

    Cherkas, Nadejda L

    2016-01-01

    Electromagnetic wave extinction by the very long but finite dielectric needle is compared with that by the infinite dielectric cylinder for an oblique incidence of the electromagnetic wave. It is shown that the renormalized Hankel functions without the logarithmic terms should be used for the calculation of the extinction per unit length of the infinite dielectric cylinder to apply it for extinction calculations by the finite dielectric cylinder.

  18. Dielectric barrier discharges applied for optical spectrometry

    Science.gov (United States)

    Brandt, S.; Schütz, A.; Klute, F. D.; Kratzer, J.; Franzke, J.

    2016-09-01

    The present review reflects the importance of dielectric barrier discharges for optical spectrometric detection in analytical chemistry. In contrast to usual discharges with a direct current the electrodes are separated by at least one dielectric barrier. There are two main features of the dielectric barrier discharges: they can serve as dissociation and excitation devices as well as ionization sources, respectively. This article portrays various application fields of dielectric barrier discharges in analytical chemistry used for elemental and molecular detection with optical spectrometry.

  19. Current leakage performance of dielectric elastomers under different boundary conditions

    Science.gov (United States)

    Lu, Tongqing; Shi, Zhibao; Chen, Zhiqiang; Huang, He; Wang, T. J.

    2015-10-01

    In the past decade, dielectric elastomers have become promising candidates in the applications of soft electromechanical transducers due to their outstanding properties of large deformation and high energy density. Current leakage of dielectric elastomer is one of the important dissipative mechanisms affecting the energy conversion efficiency. In this work, we experimentally investigate the current leakage performance of dielectric elastomers with different boundary conditions. We find that for displacement-type boundary conditions, the transition from Ohmic conduction to non-Ohmic conduction is abrupt near the critical electric field. By comparison, for force-type boundary conditions, the current leakage density versus electric field curve is smooth and is fit well by an exponential function. The equivalent resistivity of dielectric elastomers under force-type boundary conditions is approximately an order of magnitude smaller than that under displacement-type boundary conditions. The difference is qualitatively explained by a microscopic physical model. These results will help to design and optimize dielectric elastomer transducers to improve their energy conversion efficiency.

  20. PECVD of low-dielectric constant films for ULSI

    Science.gov (United States)

    Shimogaki, Yukihiro

    1998-10-01

    We studied the reduction mechanism of the dielectric constant of F-doped silicon oxide films prepared by PECVD from SiH_4/N_2O/CF4 mixture. From the estimation of the dielectric constant at various frequencies, ranging from 1MHz to 100THz, using CV measurement, Kramers-Kronig relation and the square of the refractive index, we suggest that the dielectric constant due to ionic and electronic polarization is not the dominant factor in decreasing the dielectric constant. It is important to remove -OH in films to obtain very low dielectric constant F-doped silicon oxide films, because Si-OH is the main factor of the orientational polarization in silicon oxide films made by PECVD. To investigate the reaction mechanism which controls the film structure, we changed the residence time of gas in chamber by varying the flow rate. When the residence time in chamber decreases, the film deposition rate increases. We tried to explain flow rate dependency of the deposition rate using a simple CSTR (continuous stirred tank reactor) model. It can be concluded that there are two paths to deposit the films. One route is a deposition by the precursors with poor step coverage profile, and the other route is deposition through intermediates formed by gas phase reactions that contribute to have better step coverage. The overall gas phase reaction rate constant was estimated from these kinetic studies. Same approach was also carried out on the PECVD of C:F film deposition.

  1. Comparison dielectric and thermal properties of polyurethane/organoclay nanocomposites

    Energy Technology Data Exchange (ETDEWEB)

    Baysal, Gülay [Department of Chemistry, University of Dicle, Diyarbakır 21280 (Turkey); Aydin, Haluk, E-mail: halukaydin@dicle.edu.tr [Department of Chemistry, University of Dicle, Diyarbakır 21280 (Turkey); Köytepe, Süleyman; Seçkin, Turgay [Department of Chemistry, University of Inonu, Malatya 44280 (Turkey)

    2013-08-20

    Highlights: • The PU/organoclay composites was successfully obtained by mixing method from solution. • The growth temperature does not exceed 60 °C in any step of the modification and drying. • PU-IL-Mt modified with IL showed power alternative to PU-QAS-Mt modified with QAS. • The PU composites exhibited better thermal stability and lower dielectric constants than the pure PU. - Abstract: Polyurethane composites were obtained with different organoclay contents. The organoclay Na{sup +}-montmorillonite was dispersed in the PU matrix by mixing method from solution. Na{sup +}-montmorillonite was modified with dodecyl ammonium sulphate and 1-methyl-3-octyl imidazolium tetrafluoroborate. The nanocomposites obtained by using different modifier were compared in terms of dielectric and thermal properties. The dispersion state of the organoclay particles and its effect on the thermogravimetric and dielectric properties of the composites was investigated. The characterization of PU/organooclay composites was carried out by means of scanning electron microscopy, Fourier transform infrared, thermogravimetric analysis and X-ray diffraction. The dielectric properties of the PU/organoclay nanocomposites were studied in detail. The obtained PU/organoclay intercalated nanocomposites exhibited better thermal stability and improved lower dielectric constants than the pure PU.

  2. Effective dielectric response of graded composite materials containing anisotropic particles

    Institute of Scientific and Technical Information of China (English)

    Sang Zhi-Fang; Li Zhen-Ya

    2005-01-01

    The effective dielectric response of granular composites, in which spheroidal particles with graded shells are randomly distributed in a host matrix, is investigated. General expressions for the effective dielectric constant of the composites and partial resonant condition are obtained in the dilute limit by use of a quasi-static approximation. In particular, spheroidal particles with a power-law gradation profile in the shells are studied in detail. We find that, by adjusting the dielectric gradient profile in the shells, the shape and structure of particles, it is possible to enhance the effective dielectric constant of the composite and to realize partial resonance. Under the partial resonant conditions,the coated spheroidal particles with graded shells within the host matrix can be regarded as equivalent homogeneous spheroids embedded in the same host. The equivalent spheroids have the same dielectric constant as the original cores and semiaxes equal to those of the original shells: i.e., the partial resonant system behaves as if the cores of the particles were enlarged and the shells were absent.

  3. Dielectric material degradation monitoring of dielectric barrier discharge plasma actuators

    Science.gov (United States)

    Hanson, Ronald E.; Houser, Nicole M.; Lavoie, Philippe

    2014-01-01

    It is a known phenomenon that some dielectric materials used to construct plasma actuators degrade during operation. However, the rate at which this process occurs, to what extent, as well as a method to monitor is yet to be established. In this experimental study, it is shown that electrical measurements can be used to monitor changes in the material of the plasma actuators. The procedure we introduce for monitoring the actuators follows from the work of Kriegseis, Grundmann, and Tropea [Kriegseis et al., J. Appl. Phys. 110, 013305 (2011)], who used Lissajous figures to measure actuator power consumption and capacitance. In the present study, we quantify changes in both the power consumption and capacitance of the actuators over long operating durations. It is shown that the increase in the effective capacitance of the actuator is related to degradation (thinning) of the dielectric layer, which is accompanied by an increase in actuator power consumption. For actuators constructed from layers of Kapton® polyimide tape, these changes are self-limiting. Although the polyimide film degrades relatively quickly, the underlying adhesive layer appears to remain intact. Over time, the effective capacitance was found to increase by up to 36%, 25%, and 11% for actuators constructed with 2, 3, and 4 layers of Kapton tape, respectively. A method is presented to prevent erosion of the Kapton dielectric layer using a coating of Polydimethylsiloxane oil. It is shown the application of this treatment can delay the onset of degradation of the Kapton dielectric material.

  4. Elliptic and Hyperbolic Dielectric Lens Antennas in mm-Waves

    Directory of Open Access Journals (Sweden)

    P. Piksa

    2011-04-01

    Full Text Available Dielectric lenses can substantially improve antenna parameters, especially the planarity of radiated waves and the antenna gain. The paper deals with their application in millimeter-wave band. The main goal concerns the introduction of characteristics and differences between the most commonly used types of dielectric lens antennas, i.e. elliptic and hyperbolic. Their particular features as well as behavior of radiating systems incorporating the lenses are investigated. Specific features of these lenses are discussed for both, near-field and farfield based on simulation and measurement results.

  5. On the Dielectric and Magnetic Properties of Nanocomposites

    Directory of Open Access Journals (Sweden)

    B. Hallouet

    2007-01-01

    Full Text Available We investigate nanocomposites, that is, dispersions of magnetite nanoparticles in an epoxy resin, by means of broadband dielectric and magnetic spectroscopy. The molecular dynamics of the polymer matrix is altered by the nanoparticles. Due to the formation of agglomerates neither permittivity nor permeability can be described with known effective medium models. We use the spectral representation (Bergman theorem to show that a model-free evaluation of the low-frequency permeability of the nanoparticles can be achieved by combining dielectric and magnetic data. In addition, the ferromagnetic resonance is studied experimentally. It occurs near 3 GHz and is independent of the particle concentration.

  6. Dressed counterions: Polyvalent and monovalent ions at charged dielectric interfaces

    Science.gov (United States)

    Kanduč, Matej; Naji, Ali; Forsman, Jan; Podgornik, Rudolf

    2011-07-01

    We investigate the ion distribution and overcharging at charged interfaces with dielectric inhomogeneities in the presence of asymmetric electrolytes containing polyvalent and monovalent ions. We formulate an effective “dressed counterion” approach by integrating out the monovalent salt degrees of freedom and show that it agrees with results of explicit Monte Carlo simulations. We then apply the dressed counterion approach within the framework of the generalized strong-coupling theory, valid for polyvalent ions at low concentrations, which enables an analytical description for salt effects as well as dielectric inhomogeneities in the limit of strong Coulomb interactions. Limitations and applicability of this theory are examined by comparing the results with simulations.

  7. Dielectric and baric characteristics of TlS single crystal

    Energy Technology Data Exchange (ETDEWEB)

    Mustafaeva, S.N., E-mail: solmust@gmail.com [Institute of Physics, ANAS, G. Javid prosp. 33, Az 1143 Baku (Azerbaijan); Asadov, M.M. [Institute of Chemical Problems, ANAS, G. Javid prosp. 29, Az 1143 Baku (Azerbaijan); Ismailov, A.A. [Institute of Physics, ANAS, G. Javid prosp. 33, Az 1143 Baku (Azerbaijan)

    2014-11-15

    The investigation of the frequency dependences of the dielectric coefficients and ac-conductivity of the TlS single crystals made it possible to elucidate the nature of dielectric loss and the charge transfer mechanism. Moreover, we evaluated the density and energy spread of localized states near the Fermi level, the average hopping time and the average hopping length. It was shown that the dc-conductivity of the TlS single crystals can be controlled by varying the hydrostatic pressure. This has opened up possibilities for using TlS single crystals as active elements of pressure detectors.

  8. Optical Tamm States in Dielectric Photonic Crystal Heterostructure

    Institute of Scientific and Technical Information of China (English)

    GUO Ji-Yong; SUN Yong; LI Hong-Qiang; ZHANG Ye-Wen; CHEN Hong

    2008-01-01

    We investigate one-dimensional dielectric photonic crystal and optical Tamm modes formed by superposition of two band gaps and find that this kind of mode can be explained by the single negative materials tunnelling effect. A finite-size dielectric photonic band gap can mimic one kind of effective single negative material and this property sensitively depends on the frequency Iocation in stop-band regions and surface termination and so on. The effective impedance match and effective phase match give the precise position of the optical Tamm mode. Complete transparency via tunnelling is achieved by two opaque media and demonstrates the validity of our approach.

  9. Photoconductivity and dielectric studies of potassium pentaborate crystal (KB5)

    Indian Academy of Sciences (India)

    V Joseph; S Gunasekaran; V Santhanam

    2003-06-01

    Single crystal of potassium pentaborate (KB5) has been grown by solution growth technique. FTIR and laser Raman measurements are carried out to make a qualitative analysis on KB5 crystal. Dielectric behaviour of the KB5 crystal has been studied in the microwave region using K-band microwave bench equipped with the Gunn Oscillator guided with rectangular wave-guide. To confirm the suitability of this crystal as electro optic device, its dielectric behaviour with the change of frequency has also been investigated. Photoconductivity studies were also carried out on this material. It was interesting to observe that the KB5 crystal exhibited negative photoconductivity.

  10. Artificial Dielectric Shields for Integrated Transmission Lines

    NARCIS (Netherlands)

    Ma, Y.; Rejaei, B.; Zhuang, Y.

    2008-01-01

    We present a novel shielding method for on-chip transmission lines built on conductive silicon substrates. The shield consists of an artificial dielectric with a very high in-plane dielectric constant, built from two patterned metal layers isolated by a very thin dielectric film. Inserted below an i

  11. Dielectric properties of BST/MZO ceramic composites

    Institute of Scientific and Technical Information of China (English)

    GUI JianDong; WANG Yi; DONG GuiXia; DU Jun

    2009-01-01

    Ba0.6Sr0.4TiO3/Mg1-xZnxO (MZO, x = 0, 0.05, 0.10, 0.15 and 0.20) ceramic composites were prepared by traditional ceramic processing. The crystal structure, fracture surface morphology, and dielectric properties were investigated. The samples with x = 0, 0.05 and 0.10 exhibited favorable sintering be-havior, and homogeneous diphase microstructure was obtained. Nevertheless, the microstructure of the samples with x = 0.15 and 0.20 was inhomogeneous and abnormal grain growth could be observed, and the abnormal grain growth induced the degradation of dielectric strength. The sample with x = 0.10 has relatively low dielectric loss (1.26×10-3) and the optimal FOM value (about 174).

  12. The flexoelectric effect associated size dependent pyroelectricity in solid dielectrics

    Directory of Open Access Journals (Sweden)

    Gang Bai

    2015-09-01

    Full Text Available A phenomenological thermodynamic theory is used to investigate the effect of strain gradient on the pyroelectric effect in centrosymmetric dielectric solids. Direct pyroelectricity can exist as external mechanical stress is applied to non-pyroelectric dielectrics with shapes such as truncated pyramids, due to elastic strain gradient induced flexoelectric polarization. Effective pyroelectric coefficient was analyzed in truncated pyramids. It is found to be controlled by size, ambient temperature, stress, and aspect ratio and depends mainly on temperature sensitivity of flexoelectric coefficient (TSFC and strain gradient of the truncated pyramids dielectric solids. These results show that the pyroelectric property of Ba0.67Sr0.33TiO3 above Tc similar to PZT and other lead-based ferroelectrics can be obtained. This feature might widely broaden the selection of materials for infrared detectors with preferable properties.

  13. The flexoelectric effect associated size dependent pyroelectricity in solid dielectrics

    Energy Technology Data Exchange (ETDEWEB)

    Bai, Gang, E-mail: baigang@njupt.edu.cn [Jiangsu Provincial Engineering Laboratory for RF Integration and Micropackaging and College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023 (China); Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China); Liu, Zhiguo [Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China); Xie, Qiyun; Guo, Yanyan; Li, Wei [Jiangsu Provincial Engineering Laboratory for RF Integration and Micropackaging and College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023 (China); Yan, Xiaobing [College of Electronic and information Engineering, Hebei University, Baoding 071002 (China)

    2015-09-15

    A phenomenological thermodynamic theory is used to investigate the effect of strain gradient on the pyroelectric effect in centrosymmetric dielectric solids. Direct pyroelectricity can exist as external mechanical stress is applied to non-pyroelectric dielectrics with shapes such as truncated pyramids, due to elastic strain gradient induced flexoelectric polarization. Effective pyroelectric coefficient was analyzed in truncated pyramids. It is found to be controlled by size, ambient temperature, stress, and aspect ratio and depends mainly on temperature sensitivity of flexoelectric coefficient (TSFC) and strain gradient of the truncated pyramids dielectric solids. These results show that the pyroelectric property of Ba{sub 0.67}Sr{sub 0.33}TiO{sub 3} above T{sub c} similar to PZT and other lead-based ferroelectrics can be obtained. This feature might widely broaden the selection of materials for infrared detectors with preferable properties.

  14. Dielectric properties of inorganic fillers filled epoxy thin film

    Energy Technology Data Exchange (ETDEWEB)

    Norshamira, A., E-mail: myra.arshad@gmail.com; Mariatti, M., E-mail: mariatti@usm.my [School of Materials and Mineral Resources Engineering, Engineering Campus, Universiti Sains Malaysia, 14300 Nibong Tebal, Pulau Pinang (Malaysia)

    2015-07-22

    The demand on the small size and high performance electronics has driven changes in the electronic packaging requirements from discrete capacitor to embedded capacitor. Embedded capacitor can improve electrical performance compared with discrete capacitor. This study aimed to achieve high dielectric of epoxy thin film composite that were targeted for application as embedded capacitor. In this study, inorganic fillers such as Calcium Copper Titanate (CCTO), Iron(III) Oxide (Fe{sub 2}O{sub 3}) and Titanium Dioxide (TiO{sub 2}) were loaded in epoxy system at 5 and 20vol%. Morphology and dielectric properties were investigated to identify the effect of fillers loading and types of fillers on the properties of epoxy thin film composite. Based on the study, CCTO with 20vol% loading was found to have good dielectric properties compared to other type of fillers.

  15. Splitting the surface wave in metal/dielectric nanostructures

    Institute of Scientific and Technical Information of China (English)

    Zhu Song; Wu Jian

    2011-01-01

    We investigate a modified surface wave splitter with a double-layer structure, which consists of symmetrical metallic grating and an asymmetrical dielectric, using the finite-difference time-domain (FDTD) simulation method.The metal/dielectric interface structure at this two-side aperture can support bound waves of different wavelengths,thus guiding waves in opposite directions. The covered dielectric films play an important role in the enhancement and confinement of the diffraction wave by the waveguide modes. The simulation result shows that the optical intensities of the guided surface wave at wavelengths of 760-nm and 1000-nm are about 100 times and 4~5 times those of the weaker side, respectively, which means that the surface wave is split by the proposed device.

  16. Dielectric barrier Discharge Plasma Actuator Characterization and Application

    NARCIS (Netherlands)

    Correale, G.

    2016-01-01

    An experimental investigation about nanosecond Dielectric Barrier Discharge (ns-DBD) plasma actuator is presented in this thesis. This work aimed to answer fundamental questions on the actuation mechanism of this device. In order to do so, parametric studies in a quiescent air as well as laminar

  17. Dielectric barrier Discharge Plasma Actuator Characterization and Application

    NARCIS (Netherlands)

    Correale, G.

    2016-01-01

    An experimental investigation about nanosecond Dielectric Barrier Discharge (ns-DBD) plasma actuator is presented in this thesis. This work aimed to answer fundamental questions on the actuation mechanism of this device. In order to do so, parametric studies in a quiescent air as well as laminar bou

  18. Fano resonances in dielectric, metallic and metamaterial photonic structures

    CERN Document Server

    Markos, Peter

    2016-01-01

    We investigate numerically Fano resonances excited in periodic arrays of dielectric, metallic and left-handed cylinders. Of particular interest are Fano resonances excited in the linear array of cylin- ders. We analyze spatial distribution and symmetry of electromagnetic field and discuss the relation between observed Fano resonances and frequency spectra of two-dimensional arrays of cylinders.

  19. Resonances and dipole moments in dielectric, magnetic, and magnetodielectric cylinders

    DEFF Research Database (Denmark)

    Dirksen, A.; Arslanagic, Samel; Breinbjerg, Olav

    2011-01-01

    An eigenfunction solution to the problem of plane wave scattering by dielectric, magnetic, and magnetodielectric cylinders is used for a systematic investigation of their resonances. An overview of the resonances with electric and magnetic dipole moments, needed in, e.g., the synthesis...... of metamaterials, is given with an emphasis on their strength, bandwidth, and isolation....

  20. Resonator chains of 2-D square dielectric optical microcavities

    NARCIS (Netherlands)

    Lohmeyer, Manfred

    2008-01-01

    Chains of coupled square dielectric cavities are investigated. Resonant transfer of optical power can be achieved along quite arbitrary, moderately long rectangular paths, even with individual standing-wave resonators of limited quality. We introduce an ab-initio coupled mode model that helps to int

  1. Experimental Study on Spiral Patterns in Dielectric Barrier Discharge System

    Institute of Scientific and Technical Information of China (English)

    LIU Shu-Hua; DONG Li-Fang; LIU Fu-Cheng; LI Shu-Feng; LI Xue-Chen; WANG Hong-Fang

    2006-01-01

    Spiral patterns are obtained in a dielectric barrier discharge system with water electrodes. The dynamics of spiral formation and transition is investigated. Wavelength characteristic of spiral patterns is also studied. Correlation measurements indicate that the wavelength of spiral pattern increases with the increasing gas gap width and oscillates with the increasing drive frequency.

  2. Superluminal pulse reflection from a weakly absorbing dielectric slab

    CERN Document Server

    Wang, L G; Wang, Li-Gang; Zhu, Shi-Yao

    2006-01-01

    Group delay for a reflected light pulse from a weakly absorbing dielectric slab is theoretically investigated, and large negative group delay is found for weak absorption near a resonance of the slab ($Re(kd)=m\\pi$). The group delays for both the reflected and transmitted pulses will be saturated with the increase of the absorption.

  3. The dynamics of hydrophobic interaction : A microwave dielectric study

    NARCIS (Netherlands)

    Hallenga, Klaas

    1972-01-01

    To investigate the relation between the structure of liquid water and hydrophobic interaction the dielectric relaxation of water in dilute aqueous solutions has been studied. After an introduction of the problem in which the dynamic aspects of water structure are emphasized, a theoretical analysis o

  4. Silicone elastomers with high dielectric permittivity and high dielectric breakdown strength based on dipolar copolymers

    DEFF Research Database (Denmark)

    Madsen, Frederikke Bahrt; Yu, Liyun; Daugaard, Anders Egede;

    2014-01-01

    Dielectric elastomers (DES) are a promising new transducer technology, but high driving voltages limit their current commercial potential. One method used to lower driving voltage is to increase dielectric permittivity of the elastomer. A novel silicone elastomer system with high dielectric permi......-4-nitrobenzene. Here, a high increase in dielectric permittivity (similar to 70%) was obtained without compromising other favourable DE properties such as elastic modulus, gel fraction, dielectric loss and electrical breakdown strength. © 2014 Elsevier Ltd. All rights reserved....

  5. Dielectric THz waveguides

    Science.gov (United States)

    Dupuis, Alexandre

    In this thesis we have explored a wide variety of dielectric waveguides that rely on many different waveguiding mechanisms to guide THz (far-infrared) radiation. We have explored both theoretically and experimentally a large number of waveguide designs with the aim of reducing propagation and bending losses. The different waveguides can be classified into two fundamentally different strategies for reducing the propagation loss: small-core single-mode evanescent-field fibers or large hollow-core multi-mode tubes. Our focus was first set on exploring the small-core evanescent-field fiber strategy for reducing propagation losses. Following initial theoretical work in our group, much effort was spent on the fabrication and measurement of evanescent porous subwavelength diameter plastic fibers, in an attempt to further reduce the propagation losses. The fabrication of such fibers is a challenge and many novel techniques were devised to enable fiber drawing without hole collapse. The first method sealed the holes of an assembly of polymer tubes and lead to fibers of relatively low porosity (˜25% air within the core) due to reduction in hole size during fiber drawing. The second method was a novel sacrificial polymer technique whereby drawing a completely solid fiber prevented any hole collapse and the subsequent dissolution of the sacrificial polymer revealed the holes in the fiber. The third method was a combination of preform casting using glass molds and drawing with pressurized air within the holes. This led to fibers of record porosity (86% air). The measurement of these porous fibers began with a collaboration with a group from the university of Sherbrooke. At the time, the only available detector was a frequency integrating liquid-helium-cooled bolometer (powermeter). A novel directional coupler method for measuring the losses of subwavelength fibers was developed whereby an evanescent coupler is formed by bringing a probe fiber in proximity to the sample fiber

  6. Analytical solutions for optical forces between two dielectric planar waveguides immersed in dielectric fluid media

    CERN Document Server

    Rodrigues, Janderson Rocha

    2016-01-01

    We investigate optical (transverse gradient) forces between two high-index dielectric planar waveguides immersed in low-index dielectric fluid media. Complimentary to previous studies, we extend optical forces calculations, in order to take into account a non-vacuum (and non-air) background medium, by using the Minkowski stress tensor formulation; we derived a very simple set of equations in terms of the effective refractive indexes of the waveguide eigenmodes. We also used a normalized version of the dispersion relation method to calculate the optical forces, in order to validate our results for different dielectric fluid media. Excellent agreement between the two methods was obtained for all analyzed cases. We show that, due to slot-waveguide effect, the TM modes are more sensitive to changes in the fluid refractive index than the TE ones. Furthermore, the repulsive optical force of the antisymmetric TM1 mode becomes stronger for higher refractive indexes, whereas the attractive force of the symmetric TM0 m...

  7. Characterization, Microstructure, and Dielectric properties of cubic pyrochlore structural ceramics

    KAUST Repository

    Li, Yangyang

    2013-05-01

    The (BMN) bulk materials were sintered at 1050°C, 1100°C, 1150°C, 1200°C by the conventional ceramic process, and their microstructure and dielectric properties were investigated by Scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman spectroscopy, Transmission electron microscopy (TEM) (including the X-ray energy dispersive spectrometry EDS and high resolution transmission electron microscopy HRTEM) and dielectric impedance analyzer. We systematically investigated the structure, dielectric properties and voltage tunable property of the ceramics prepared at different sintering temperatures. The XRD patterns demonstrated that the synthesized BMN solid solutions had cubic phase pyrochlore-type structure when sintered at 1050°C or higher, and the lattice parameter (a) of the unit cell in BMN solid solution was calculated to be about 10.56Å. The vibrational peaks observed in the Raman spectra of BMN solid solutions also confirmed the cubic phase pyrochlore-type structure of the synthesized BMN. According to the Scanning Electron Microscope (SEM) images, the grain size increased with increasing sintering temperature. Additionally, it was shown that the densities of the BMN ceramic tablets vary with sintering temperature. The calculated theoretical density for the BMN ceramic tablets sintered at different temperatures is about 6.7521 . The density of the respective measured tablets is usually amounting more than 91% and 5 approaching a maximum value of 96.5% for sintering temperature of 1150°C. The microstructure was investigated by using Scanning Transmission Electron Microscope (STEM), X-ray diffraction (XRD). Combined with the results obtained from the STEM and XRD, the impact of sintering temperature on the macroscopic and microscopic structure was discussed. The relative dielectric constant ( ) and dielectric loss ( ) of the BMN solid solutions were measured to be 161-200 and (at room temperature and 100Hz-1MHz), respectively. The BMN solid

  8. Dielectric waveguide amplifiers and lasers

    NARCIS (Netherlands)

    Pollnau, Markus

    The performance of semiconductor amplifiers and lasers has made them the preferred choice for optical gain on a micro-chip. In the past few years, we have demonstrated that also rare-earth-ion-doped dielectric waveguides show remarkable performance, ranging from a small-signal gain per unit length

  9. Existence conditions for bulk large-wavevector waves in metal-dielectric and graphene-dielectric multilayer hyperbolic metamaterials

    DEFF Research Database (Denmark)

    Zhukovsky, Sergei; Andryieuski, Andrei; Lavrinenko, Andrei

    2014-01-01

    We theoretically investigate general existence conditions for broadband bulk large-wavevector (high-k) propagating waves (such as volume plasmon polaritons in hyperbolic metamaterials) in arbitrary subwavelength periodic multilayers structures. Treating the elementary excitation in the unit cell......-dielectric and recently introduced graphene-dielectric stacks. We confirm that short-range surface plasmons in thin metal layers can give rise to hyperbolic metamaterial properties and demonstrate that long-range surface plasmons cannot. We also show that graphene-dielectric multilayers tend to support high-k waves...... and explore the range of parameters, where this is possible, confirming the prospects of using graphene for materials with hyperbolic dispersion. The suggested formalism is applicable to a large variety of structures, such as continuous or structured microwave, terahertz (THz) and optical metamaterials...

  10. Dielectric Properties of Zinc Sulfide Concentrate during the Roasting at Microwave Frequencies

    Directory of Open Access Journals (Sweden)

    Guangjun He

    2017-02-01

    Full Text Available Microwave technology has a potential application in the extraction of zinc from sulphide ores, knowledge of the dielectric properties of these ores plays a major role in the microwave design and simulation for any process. The dielectric properties of zinc sulfide concentrate for two different apparent densities-1.54 and 1.63 g/cm3-have been measured by using the resonance cavity perturbation technique at 915 and 2450 MHz during the roasting process for the temperature ranging from room temperature to 850 °C. The variations of dielectric constant, the dielectric loss factor, the dielectric loss tangent and the penetration depth with the temperature, frequency and apparent density have been investigated numerically. The results indicate that the dielectric constant increases as the temperature increases and temperature has a pivotal effect on the dielectric constant, while the dielectric loss factor has a complicated change and all of the temperature, frequency and apparent density have a significant impact to dielectric loss factor. Zinc sulfide concentrate is high loss material from 450 to 800 °C on the basis of theoretical analyses of dielectric loss tangent and penetration depth, its ability of absorbing microwave energy would be enhanced by increasing the apparent density as well. The experimental results also have proved that zinc sulfide concentrate is easy to be heated by microwave energy from 450 to 800 °C. In addition, the experimental date of dielectric constant and loss factor can be fitted perfectly by Boltzmann model and Gauss model, respectively

  11. Low kV rotational 3D X-ray imaging for improved CNR of iodine contrast agent

    NARCIS (Netherlands)

    Schaefer, D.; Ahrens, M.; Grass, M.

    2011-01-01

    The contrast of iodine to soft tissue (water) decreases with higher tube voltage in reconstructed 3D X-ray images. Improved acquisition protocols with a tube voltage of about 80 kV for imaging iodine have been proposed earlier for diagnostic CT imaging. We investigate the contrast-to-noise ratio (CN

  12. Entirely soft dielectric elastomer robots

    Science.gov (United States)

    Henke, E.-F. Markus; Wilson, Katherine E.; Anderson, Iain A.

    2017-04-01

    Multifunctional Dielectric Elastomer (DE) devices are well established as actuators, sensors and energy har- vesters. Since the invention of the Dielectric Elastomer Switch (DES), a piezoresistive electrode that can directly switch charge on and off, it has become possible to expand the wide functionality of DE structures even more. We show the application of fully soft DE subcomponents in biomimetic robotic structures. It is now possible to couple arrays of actuator/switch units together so that they switch charge between them- selves on and off. One can then build DE devices that operate as self-controlled oscillators. With an oscillator one can produce a periodic signal that controls a soft DE robot - a DE device with its own DE nervous system. DESs were fabricated using a special electrode mixture, and imprinting technology at an exact pre-strain. We have demonstrated six orders of magnitude change in conductivity within the DES over 50% strain. The control signal can either be a mechanical deformation from another DE or an electrical input to a connected dielectric elastomer actuator (DEA). We have demonstrated a variety of fully soft multifunctional subcomponents that enable the design of autonomous soft robots without conventional electronics. The combination of digital logic structures for basic signal processing, data storage in dielectric elastomer flip-flops and digital and analogue clocks with adjustable frequencies, made of dielectric elastomer oscillators (DEOs), enables fully soft, self-controlled and electronics-free robotic structures. DE robotic structures to date include stiff frames to maintain necessary pre-strains enabling sufficient actuation of DEAs. Here we present a design and production technology for a first robotic structure consisting only of soft silicones and carbon black.

  13. On the dielectric dispersion and absorption in nanosized manganese zinc mixed ferrites.

    Science.gov (United States)

    Veena Gopalan, E; Malini, K A; Sakthi Kumar, D; Yoshida, Yasuhiko; Al-Omari, I A; Saravanan, S; Anantharaman, M R

    2009-04-01

    The temperature and frequency dependence of dielectric permittivity and dielectric loss of nanosized Mn(1-x)Zn(x)Fe(2)O(4) (for x = 0, 0.2, 0.4, 0.6, 0.8, 1) were investigated. The impact of zinc substitution on the dielectric properties of the mixed ferrite is elucidated. Strong dielectric dispersion and broad relaxation were exhibited by Mn(1-x)Zn(x)Fe(2)O(4). The variation of dielectric relaxation time with temperature suggests the involvement of multiple relaxation processes. Cole-Cole plots were employed as an effective tool for studying the observed phenomenon. The activation energies were calculated from relaxation peaks and Cole-Cole plots and found to be consistent with each other and indicative of a polaron conduction.

  14. Low-κ' dielectric properties of UV-treated bi-axially oriented polypropylene films

    Science.gov (United States)

    Dervos, C. T.; Tarantili, P. A.; Athanassopoulou, M. D.

    2009-07-01

    A 40 µm multilayer bi-axially oriented polypropylene (BOPP) film, was fabricated by the tenter process and its dielectric response was investigated after applying combined action of UV, humidity and heat. Dissipation factor (tan δ) and relative dielectric constant measurements were performed via the capacitance method for frequencies 20Hz-1 GHz. These results show that the relative dielectric constant (κ') reduces towards ultra low values (1.8) with an increasing number of applied UV-condensation cycles without any subsequent increase in the dielectric loss. Having no added physical porosity and absence of fluorine atoms, the irradiated BOPP structures offer significant advantages over poly(tetrafluoroethylene) PTFE due to reduced polarization effects, lower dielectric constant values and chemical stability to the adjacent copper or aluminium conductors. Possible application fields are dry type high-voltage capacitors and insulation within electronic components.

  15. Improvement in electric and dielectric properties of nanoferrite synthesized via reverse micelle technique

    Science.gov (United States)

    Thakur, Sangeeta; Katyal, S. C.; Singh, M.

    2007-12-01

    Nano nickel zinc ferrite (Ni0.58Zn0.42Fe2O4) with fascinating dielectric properties which reveal a direction for application was synthesized by reverse micelle technique. Dielectric constant and dielectric losses are controlled up to a measurement temperature of around 473K at higher frequency range of 9-19MHz. The dielectric loss of the sample investigated at room temperature is only 0.003 at 19MHz. The presently studied nanoferrite also exhibits a high value of dc resistivity, 108Ωcm. High resistivity and low dielectric constant and loss can be corelated to small grain size and better compositional stoichiometry obtained as a result of processing via reverse micelle technique at low sintering temperature (773K).

  16. Electron dynamics and plasma jet formation in a helium atmospheric pressure dielectric barrier discharge jet

    Energy Technology Data Exchange (ETDEWEB)

    Algwari, Q. Th. [Centre for Plasma Physics, School of Maths and Physics, Queen' s University Belfast, University Road, Belfast, Northern Ireland BT7 1NN (United Kingdom); Electronic Department, College of Electronics Engineering, Mosul University, Mosul 41002 (Iraq); O' Connell, D. [Centre for Plasma Physics, School of Maths and Physics, Queen' s University Belfast, University Road, Belfast, Northern Ireland BT7 1NN (United Kingdom); York Plasma Institute, Department of Physics, University of York, York YO10 5DD (United Kingdom)

    2011-09-19

    The excitation dynamics within the main plasma production region and the plasma jets of a kHz atmospheric pressure dielectric barrier discharge (DBD) jet operated in helium was investigated. Within the dielectric tube, the plasma ignites as a streamer-type discharge. Plasma jets are emitted from both the powered and grounded electrode end; their dynamics are compared and contrasted. Ignition of these jets are quite different; the jet emitted from the powered electrode is ignited with a slight time delay to plasma ignition inside the dielectric tube, while breakdown of the jet at the grounded electrode end is from charging of the dielectric and is therefore dependent on plasma production and transport within the dielectric tube. Present streamer theories can explain these dynamics.

  17. The 'emergent scaling' phenomenon and the dielectric properties of random resistor-capacitor networks

    CERN Document Server

    Bouamrane, R

    2003-01-01

    An efficient algorithm, based on the Frank-Lobb reduction scheme, for calculating the equivalent dielectric properties of very large random resistor-capacitor (R-C) networks has been developed. It has been used to investigate the network size and composition dependence of dielectric properties and their statistical variability. The dielectric properties of 256 samples of random networks containing: 512, 2048, 8192 and 32 768 components distributed randomly in the ratios 60% R-40% C, 50% R-50% C and 40% R-60% C have been computed. It has been found that these properties exhibit the anomalous power law dependences on frequency known as the 'universal dielectric response' (UDR). Attention is drawn to the contrast between frequency ranges across which percolation determines dielectric response, where considerable variability is found amongst the samples, and those across which power laws define response where very little variability is found between samples. It is concluded that the power law UDRs are emergent pr...

  18. Dielectric properties of poly (1,4-phenylene ether-ether-sulfone)

    CERN Document Server

    Spasevska, H

    2002-01-01

    Dielectric properties of Poly (1,4-phenylene ether-ether-sulfone) are obtained from dielectric spectroscopy of the polymer pellet. The values of relative dielectric constant epsilon', dielectric losses epsilon sup , dielectric dissipation factor tan delta and complex impedance are obtained at temperature of 75 sup o C. The temperature dependence of these parameters is investigated for three frequencies (8x10 sup 4 Hz; 8x10 sup 5 Hz; 8x10 sup 6 Hz) of applied electric field. The specific conductivity sigma, which depends on temperature, is related to the ohmic resistance R, at temperature in the interval from 66 to 83 sup o C. Fitting the experimental data, the value of the activation energy U is obtained. (Original)

  19. Far-Infrared Study of BaTi4O9 Microwave Dielectric Ceramics

    Science.gov (United States)

    Huang, Xianli; Wang, Fuping; Song, Ying

    2006-02-01

    In this work, lattice vibrations in BaTi4O9 ceramic were investigated using far-infrared spectra (FIRS), which were transformed by Kramers-Kronig relations into the real and imaginary parts of permittivity spectra. Curve fitting of reflectance spectra shows that 32 vibration modes were observed, among which transverse vibrations at lower frequencies (stretching and bending vibration modes involving A-site cations and TiO6 octahedra) account for most dielectric loss. An evaluation of dielectric constants and quality factors using an extrapolation method was accomplished. The calculated dielectric constants agree well with the measured ones, while the calculated dielectric losses are about half the measured ones, indicating that noneigen elements such as defects and pores exist and play an important role in BaTi4O9 ceramics. A multimode behavior of vibration modes involving Ba-sites was proposed as the origin of dielectric loss.

  20. Dielectric barrier discharges in analytical chemistry.

    Science.gov (United States)

    Meyer, C; Müller, S; Gurevich, E L; Franzke, J

    2011-06-21

    The present review reflects the importance of dielectric barrier discharges in analytical chemistry. Special about this discharge is-and in contrast to usual discharges with direct current-that the plasma is separated from one or two electrodes by a dielectric barrier. This gives rise to two main features of the dielectric barrier discharges; it can serve as dissociation and excitation device and as ionization mechanism, respectively. The article portrays the various application fields for dielectric barrier discharges in analytical chemistry, for example the use for elemental detection with optical spectrometry or as ionization source for mass spectrometry. Besides the introduction of different kinds of dielectric barrier discharges used for analytical chemistry from the literature, a clear and concise classification of dielectric barrier discharges into capacitively coupled discharges is provided followed by an overview about the characteristics of a dielectric barrier discharge concerning discharge properties and the ignition mechanism.

  1. Superoxide anions are involved in mediating the effect of low K intake on c-Src expression and renal K secretion in the cortical collecting duct.

    Science.gov (United States)

    Babilonia, Elisa; Wei, Yuan; Sterling, Hyacinth; Kaminski, Pawel; Wolin, Michael; Wang, Wen-Hui

    2005-03-18

    We previously demonstrated that low K intake stimulated the expression of c-Src and that stimulation of protein tyrosine kinase inhibited ROMK channel activity (Wei, Y., Bloom, P., Lin, D. H., Gu, R. M., and Wang, W. H. (2001) Am. J. Physiol. 281, F206-F212). Decreases in dietary K content significantly increased O(2)(-) levels and the phosphorylation of c-Jun, a transcription factor, in renal cortex and outer medulla. The role of O(2)(-) and related products such as H(2)O(2) in stimulating the expression of protein tyrosine kinase is suggested by the observation that addition of 50-200 microm H(2)O(2) increased the phosphorylation of c-Jun and the expression of c-Src in M1 cells, a mouse collecting duct principal cell line. The effect of H(2)O(2) on c-Src expression was completely abolished with cyclohexamide or actinomycin D. The treatment of animals on a K-deficient (KD) diet with tempol for 7 days significantly decreased the production of O(2)(-), c-Jun phosphorylation, and c-Src expression. Moreover, low K intake decreased the activity of ROMK-like small conductance channels from 1.37 (control K diet) to 0.5 in the cortical collecting duct and increased the tyrosine phosphorylation of ROMK in the renal cortex and outer medulla. In contrast, the tempol treatment not only increased channel activity to 1.1 in the cortical collecting duct but also decreased the tyrosine phosphorylation of ROMK from rats on a KD diet. Finally, suppressing O(2)(-) production with tempol significantly increased renal K excretion measured with metabolic cage and lowered the plasma K concentration in comparison with those on a KD diet alone without tempol. We conclude that O(2)(-) and related products play a role in mediating the effect of low K intake on c-Src expression and in suppressing ROMK channel activity and renal K secretion.

  2. Surface optical phonons in cylindrical ZnO nanoparticles: dielectric effect of outer medium

    Energy Technology Data Exchange (ETDEWEB)

    Chassaing, P M [Centre d' Elaboration de Materiaux et d' Etudes Structurales, UPR 8011, CNRS, 29 rue Jeanne Marvig 31055 Toulouse (France) and Universite Paul Sabatier, 118 route de Narbonne 31062 Toulouse (France); Demangeot, F [Centre d' Elaboration de Materiaux et d' Etudes Structurales, UPR 8011, CNRS, 29 rue Jeanne Marvig 31055 Toulouse (France) and Universite Paul Sabatier, 118 route de Narbonne 31062 Toulouse (France); Paillard, V [Centre d' Elaboration de Materiaux et d' Etudes Structurales, UPR 8011, CNRS, 29 rue Jeanne Marvig 31055 Toulouse (France) and Universite Paul Sabatier, 118 route de Narbonne 31062 Toulouse (France); Zwick, A [Centre d' Elaboration de Materiaux et d' Etudes Structurales, UPR 8011, CNRS, 29 rue Jeanne Marvig 31055 Toulouse (France) and Universite Paul Sabatier, 118 route de Narbonne 31062 Toulouse (France); Combe, N [Centre d' Elaboration de Materiaux et d' Etudes Structurales, UPR 8011, CNRS, 29 rue Jeanne Marvig 31055 Toulouse (France) and Universite Paul Sabatier, 118 route de Narbonne 31062 Toulouse (France); Pages, C [Laboratoire de Chimie de Coordination, UPR 8241, CNRS, 205 route de Narbonne 31077 Toulouse (France); Kahn, M L [Laboratoire de Chimie de Coordination, UPR 8241, CNRS, 205 route de Narbonne 31077 Toulouse (France); Maisonnat, A [Laboratoire de Chimie de Coordination, UPR 8241, CNRS, 205 route de Narbonne 31077 Toulouse (France); Chaudret, B [Laboratoire de Chimie de Coordination, UPR 8241, CNRS, 205 route de Narbonne 31077 Toulouse (France)

    2007-12-15

    Surface optical phonons in freestanding cylindrical ZnO nanoparticles surrounded by organic molecules have been theoretically investigated using a dielectric continuum model and experimentally with Raman spectrometry. From a theoretical point of view, we calculate surface optical phonons in the cases of cylindrical and planar surfaces of nanoparticles. We also investigate the dispersion of these modes regarding the dielectric constant of the outer medium. By modelling the organic shell of nanoparticles with a dielectric constant and based on experimental results of Raman spectrometry, we show that we observed a top surface mode of nanoparticles.

  3. Computational study of filler microstructure and effective property relations in dielectric composites

    Science.gov (United States)

    Wang, Yu U.; Tan, Daniel Q.

    2011-05-01

    Phase field modeling and computer simulation is employed to study the relations between filler microstructures and effective properties of dielectric composites. The model solves electrostatic equations in terms of polarization vector field in reciprocal space using a fast Fourier transform technique and parallel computing algorithm. Composites composed of linear constituent phases of different dielectric constants are considered. Interphase boundary conditions are automatically taken into account without explicitly tracking interphase interfaces in the composites. Various factors associated with filler microstructures are systematically investigated, including dielectric constant mismatch between fillers and matrix, particle size, shape, orientation, volume fraction, and spatial arrangement as well as directional alignment. Heterogeneous distributions of polarization, charge density, and local electric field are calculated for each composite microstructure, based on which effective dielectric constant and dielectric anisotropy of the composites are determined. It is found that electrostatic interactions among high-dielectric-constant fillers embedded in low-dielectric-constant matrix play critical roles in determining the composite properties, which sensitively depend on filler arrangement and, especially, directional alignment into fibrous microstructures (chains). Such microstructurally engineered composites, whose fillers are not randomly dispersed, exhibit strong dielectric anisotropy despite all constituent components being isotropic.

  4. Controllable Ultra Low-k by Via-Typed Air Gap with the Better Design Margin for Logic Devices below 45 nm Node

    Institute of Scientific and Technical Information of China (English)

    CHOI Youn-Ok; KIM Sang-Yong

    2010-01-01

    @@ By changing the air gap to a via-typed air gap,the height of the air gap is reduced up to about 50% compared to the height of the trench-typed air gap.The controllable(1 ≤ k < 2.9)ultra low-k is also easily fabricated by adjusting the space of the via-typed air gap.The via-typed air gap makes the design margin better due to its lower height in the dense and narrow lines.

  5. Two-phase mixed media dielectric with macro dielectric beads for enhancing resistivity and breakdown strength

    Science.gov (United States)

    Falabella, Steven; Meyer, Glenn A; Tang, Vincent; Guethlein, Gary

    2014-06-10

    A two-phase mixed media insulator having a dielectric fluid filling the interstices between macro-sized dielectric beads packed into a confined volume, so that the packed dielectric beads inhibit electro-hydrodynamically driven current flows of the dielectric liquid and thereby increase the resistivity and breakdown strength of the two-phase insulator over the dielectric liquid alone. In addition, an electrical apparatus incorporates the two-phase mixed media insulator to insulate between electrical components of different electrical potentials. And a method of electrically insulating between electrical components of different electrical potentials fills a confined volume between the electrical components with the two-phase dielectric composite, so that the macro dielectric beads are packed in the confined volume and interstices formed between the macro dielectric beads are filled with the dielectric liquid.

  6. Effect of Biomass Waste Filler on the Dielectric Properties of Polymer Composites

    Directory of Open Access Journals (Sweden)

    Yew Been Seok

    2016-07-01

    Full Text Available The effect of biomass waste fillers, namely coconut shell (CS and sugarcane bagasse (SCB on the dielectric properties of polymer composite was investigated. The aim of this study is to investigate the potential of CS and SCB to be used as conductive filler (natural source of carbon in the polymer composite. The purpose of the conductive filler is to increase the dielectric properties of the polymer composite. The carbon composition the CS and SCB was determine through carbon, hydrogen, nitrogen and sulphur (CHNS elemental analysis whereas the structural morphology of CS and SCB particles was examined by using scanning electron microscope. Room temperature open-ended coaxial line method was used to determine the dielectric constant and dielectric loss factor over broad band frequency range of 200 MHz-20 GHz. Based on this study, the results found that CS and SCB contain 48% and 44% of carbon, which is potentially useful to be used as conductive elements in the polymer composite. From SEM morphology, presence of irregular shape particles (size ≈ 200 μm and macroporous structure (size ≈ 2.5 μm were detected on CS and SCB. For dielectric properties measurement, it was measured that the average dielectric constant (ε' is 3.062 and 3.007 whereas the average dielectric loss factor (ε" is 0.282 and 0.273 respectively for CS/polymer and SCB/polymer composites. The presence of the biomass waste fillers have improved the dielectric properties of the polymer based composite (ε' = 2.920, ε" = 0.231. However, the increased in the dielectric properties is not highly significant, i.e. up to 4.86 % increase in ε' and 20% increase in ε". The biomass waste filler reinforced polymer composites show typical dielectric relaxation characteristic at frequency of 10 GHz - 20 GHz and could be used as conducting polymer composite for suppressing EMI at high frequency range.

  7. Dielectric Property Measurements to Support Interpretation of Cassini Radar Data

    Science.gov (United States)

    Jamieson, Corey; Barmatz, M.

    2012-10-01

    Radar observations are useful for constraining surface and near-surface compositions and illuminating geologic processes on Solar System bodies. The interpretation of Cassini radiometric and radar data at 13.78 GHz (2.2 cm) of Titan and other Saturnian icy satellites is aided by laboratory measurements of the dielectric properties of relevant materials. However, existing dielectric measurements of candidate surface materials at microwave frequencies and low temperatures is sparse. We have set up a microwave cavity and cryogenic system to measure the complex dielectric properties of liquid hydrocarbons relevant to Titan, specifically methane, ethane and their mixtures to support the interpretation of spacecraft instrument and telescope radar observations. To perform these measurements, we excite and detect the TM020 mode in a custom-built cavity with small metal loop antennas powered by a Vector Network Analyzer. The hydrocarbon samples are condensed into a cylindrical quartz tube that is axially oriented in the cavity. Frequency sweeps through a resonance are performed with an empty cavity, an empty quartz tube inserted into the cavity, and with a sample-filled quartz tube in the cavity. These sweeps are fit by a Lorentzian line shape, from which we obtain the resonant frequency, f, and quality factor, Q, for each experimental arrangement. We then derive dielectric constants and loss tangents for our samples near 13.78 GHz using a new technique ideally suited for measuring liquid samples. We will present temperature-dependent, dielectric property measurements for liquid methane and ethane. The full interpretation of the radar and radiometry observations of Saturn’s icy satellites depends critically on understanding the dielectric properties of potential surface materials. By investigating relevant liquids and solids we will improve constrains on lake depths, volumes and compositions, which are important to understand Titan’s carbon/organic cycle and inevitably

  8. Tailoring dielectric properties of ferroelectric-dielectric multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Kesim, M. T.; Zhang, J. [Department of Materials Science and Engineering and Institute of Materials Science, University of Connecticut, Storrs, Connecticut 06269 (United States); Cole, M. W. [U.S. Army Research Laboratory, Weapons and Materials Research Directorate, Aberdeen Proving Ground, Maryland 21005 (United States); Misirlioglu, I. B. [Faculty of Engineering and Natural Sciences, Sabancı University, Orhanlı/Tuzla, 34956 Istanbul (Turkey); Alpay, S. P., E-mail: p.alpay@ims.uconn.edu [Department of Materials Science and Engineering and Institute of Materials Science, University of Connecticut, Storrs, Connecticut 06269 (United States); Department of Physics, University of Connecticut, Storrs, Connecticut 06269 (United States)

    2014-01-13

    We develop a nonlinear thermodynamic model for multilayer ferroelectric heterostructures that takes into account electrostatic and electromechanical interactions between layers. We concentrate on the effect of relative layer fractions and in-plane thermal stresses on dielectric properties of Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3}-, BaTiO{sub 3}-, and PbZr{sub 0.2}Ti{sub 0.8}O{sub 3} (PZT)-SrTiO{sub 3} (STO) multilayers on Si and c-sapphire. We show that dielectric properties of such multilayers can be significantly enhanced by tailoring the growth/processing temperature and the STO layer fraction. Our computations show that large tunabilities (∼90% at 400 kV/cm) are possible in carefully designed barium strontium titanate-STO and PZT-STO even on Si for which there exist substantially large in-plane strains.

  9. Electrical modeling of dielectric elastomer stack transducers

    Science.gov (United States)

    Haus, Henry; Matysek, Marc; Moessinger, Holger; Flittner, Klaus; Schlaak, Helmut F.

    2013-04-01

    Performance of dielectric elastomer transducers (DEST) depends on mechanical and electrical parameters. For designing DEST it is therefore necessary to know the influences of these parameters on the overall performance. We show an electrical equivalent circuit valid for a transducer consisting of multiple layers and derive the electrical parameters of the circuit depending on transducers geometry and surface resistivity of the electrodes. This allows describing the DESTs dynamic behavior as a function of fabrication (layout, sheet and interconnection resistance), material (breakdown strength, permittivity) and driving (voltage) parameters. Using this electrical model transfer function and cut-off frequency are calculated, describing the influence of transducer capacitance, resistance and driving frequency on the achievable actuation deflection. Furthermore non ideal boundary effects influencing the capacitance value of the transducer are investigated by an electrostatic simulation and limits for presuming a simple plate capacitor model for calculating the transducer capacitance are derived. Results provide the plate capacitor model is a valid assumption for typical transducer configurations but for certain aspect ratios of electrode dimensions to dielectric thickness -- arising e.g. in the application of tactile interfaces -- the influence of boundary effects is to be considered.

  10. Dielectric relaxation of CdO nanoparticles

    Science.gov (United States)

    Tripathi, Ramna; Dutta, Alo; Das, Sayantani; Kumar, Akhilesh; Sinha, T. P.

    2016-02-01

    Nanoparticles of cadmium oxide have been synthesized by soft chemical route using thioglycerol as the capping agent. The crystallite size is determined by X-ray diffraction technique and the particle size is obtained by transmission electron microscope. The band gap of the material is obtained using Tauc relation to UV-visible absorption spectrum. The photoluminescence emission spectra of the sample are measured at various excitation wavelengths. The molecular components in the material have been analyzed by FT-IR spectroscopy. The dielectric dispersion of the material is investigated in the temperature range from 313 to 393 K and in the frequency range from 100 Hz to 1 MHz by impedance spectroscopy. The Cole-Cole model is used to describe the dielectric relaxation of the system. The scaling behavior of imaginary part of impedance shows that the relaxation describes the same mechanism at various temperatures. The frequency-dependent electrical data are also analyzed in the framework of conductivity and electrical modulus formalisms. The frequency-dependent conductivity spectra are found to obey the power law.

  11. Electromechanical response of silicone dielectric elastomers

    Science.gov (United States)

    Cârlescu, V.; Prisăcaru, G.; Olaru, D.

    2016-08-01

    This paper presents an experimental technique to investigate the electromechanical properties of silicone dielectric elastomers actuated with high DC electric fields. A non-contact measurement technique is used to capture and monitor the thickness strain (contraction) of a circular film placed between two metallic disks electrodes. Two active fillers such as silica (10, 15 and 30 wt%) and barium titanate (5 and 15 wt%) were incorporated in order to increase the actuation performance. Thickness strain was measured at HV stimuli up to 4.5 kV and showed a quadratic dependence against applied electric field indicating that the induced strain is triggered by the Maxwell effect and/or electrostriction phenomenon as reported in literature. The actuation process evidences a rapid contraction upon HV activation and a slowly relaxation when the electrodes are short-circuit due to visco-elastic nature of elastomers. A maximum of 1.22 % thickness strain was obtained at low actuating field intensity (1.5 V/pm) comparable with those reported in literature for similar dielectric elastomer materials.

  12. Dielectric breakdown of cell membranes.

    Science.gov (United States)

    Zimmermann, U; Pilwat, G; Riemann, F

    1974-11-01

    With human and bovine red blood cells and Escherichia coli B, dielectric breakdown of cell membranes could be demonstrated using a Coulter Counter (AEG-Telefunken, Ulm, West Germany) with a hydrodynamic focusing orifice. In making measurements of the size distributions of red blood cells and bacteria versus increasing electric field strength and plotting the pulse heights versus the electric field strength, a sharp bend in the otherwise linear curve is observed due to the dielectric breakdown of the membranes. Solution of Laplace's equation for the electric field generated yields a value of about 1.6 V for the membrane potential at which dielectric breakdown occurs with modal volumes of red blood cells and bacteria. The same value is also calculated for red blood cells by applying the capacitor spring model of Crowley (1973. Biophys. J. 13:711). The corresponding electric field strength generated in the membrane at breakdown is of the order of 4 . 10(6) V/cm and, therefore, comparable with the breakdown voltages for bilayers of most oils. The critical detector voltage for breakdown depends on the volume of the cells. The volume-dependence predicted by Laplace theory with the assumption that the potential generated across the membrane is independent of volume, could be verified experimentally. Due to dielectric breakdown the red blood cells lose hemoglobin completely. This phenomenon was used to study dielectric breakdown of red blood cells in a homogeneous electric field between two flat platinum electrodes. The electric field was applied by discharging a high voltage storage capacitor via a spark gap. The calculated value of the membrane potential generated to produce dielectric breakdown in the homogeneous field is of the same order as found by means of the Coulter Counter. This indicates that mechanical rupture of the red blood cells by the hydrodynamic forces in the orifice of the Coulter Counter could also be excluded as a hemolysing mechanism. The detector

  13. Nanoscale tomographic reconstruction of the subsurface mechanical properties of low-k high-aspect ratio patterns

    Science.gov (United States)

    Stan, Gheorghe; Mays, Ebony; Yoo, Hui Jae; King, Sean W.

    2016-12-01

    In this work, intermittent contact resonance atomic force microscopy (ICR-AFM) was performed on high-aspect ratio a-SiOC:H patterned fins (100 nm in height and width from 20 to 90 nm) to map the depth and width dependencies of the material stiffness. The spatial resolution and depth sensitivity of the measurements were assessed from tomographic cross-sections over various regions of interest within the 3D space of the measurements. Furthermore, the depth-dependence of the measured contact stiffness over the scanned area was used to determine the sub-surface variation of the elastic modulus at each point in the scan. This was achieved by iteratively adjusting the local elastic profile until the depth dependence of the resulted contact stiffness matched the depth dependence of the contact stiffness measured by ICR-AFM at that location. The results of this analysis were assembled into nanoscale sub-surface tomographic images of the elastic modulus of the investigated SiOC:H patterns. A new 3D structure-property representation emerged from these tomographic images with direct evidence for the alterations sustained by the structures during processing.

  14. Molecular motion, dielectric response, and phase transition of charge-transfer crystals: acquired dynamic and dielectric properties of polar molecules in crystals.

    Science.gov (United States)

    Harada, Jun; Ohtani, Masaki; Takahashi, Yukihiro; Inabe, Tamotsu

    2015-04-08

    Molecules in crystals often suffer from severe limitations on their dynamic processes, especially on those involving large structural changes. Crystalline compounds, therefore, usually fail to realize their potential as dielectric materials even when they have large dipole moments. To enable polar molecules to undergo dynamic processes and to provide their crystals with dielectric properties, weakly bound charge-transfer (CT) complex crystals have been exploited as a molecular architecture where the constituent polar molecules have some freedom of dynamic processes, which contribute to the dielectric properties of the crystals. Several CT crystals of polar tetrabromophthalic anhydride (TBPA) molecules were prepared using TBPA as an electron acceptor and aromatic hydrocarbons, such as coronene and perylene, as electron donors. The crystal structures and dielectric properties of the CT crystals as well as the single-component crystal of TBPA were investigated at various temperatures. Molecular reorientation of TBPA molecules did not occur in the single-component crystal, and the crystal did not show a dielectric response due to orientational polarization. We have found that the CT crystal formation provides a simple and versatile method to develop molecular dielectrics, revealing that the molecular dynamics of the TBPA molecules and the dielectric property of their crystals were greatly changed in CT crystals. The TBPA molecules underwent rapid in-plane reorientations in their CT crystals, which exhibited marked dielectric responses arising from the molecular motion. An order-disorder phase transition was observed for one of the CT crystals, which resulted in an abrupt change in the dielectric constant at the transition temperature.

  15. Optomechanics of Levitated Dielectric Particles

    CERN Document Server

    Yin, Zhang-qi; Li, Tongcang

    2013-01-01

    We review recent works on optomechanics of optically trapped microspheres and nanoparticles in vacuum, which provide an ideal system for studying macroscopic quantum mechanics and ultrasensitive force detection. An optically trapped particle in vacuum has an ultrahigh mechanical quality factor as it is well-isolated from the thermal environment. Its oscillation frequency can be tuned in real time by changing the power of the trapping laser. Furthermore, an optically trapped particle in vacuum may rotate freely, a unique property that does not exist in clamped mechanical oscillators. In this review, we will introduce the current status of optical trapping of dielectric particles in air and vacuum, Brownian motion of an optically trapped particle at room temperature, Feedback cooling and cavity cooling of the Brownian motion. We will also discuss about using optically trapped dielectric particles for studying macroscopic quantum mechanics and ultrasensitive force detection. Applications range from creating macr...

  16. Fabrication and characteristics of high-K HfO2 gate dielectrics on n-germanium

    Institute of Scientific and Technical Information of China (English)

    Han De-Dong; Kang Jin-Feng; Liu Xiao-Yan; Sun Lei; Luo Hao; Han Ru-Qi

    2007-01-01

    This paper reports that the high-K HfO2 gate dielectrics are fabricated on n-germanium substrates by sputtering Hf on Ge and following by a furnace annealing. The impacts of sputtering ambient, annealing ambient and annealing temperature on the electrical properties of high-K HfO2 gate dielectrics on germanium substrates are investigated.Experimental results indicate that high-K HfO2 gate dielectrics on germanium substrates with good electrical characteristics are obtained, the electrical properties of high-K HfO2 gate dielectrics is strongly correlated with sputtering ambient, annealing ambient and annealing temperature.

  17. Dipolar cross-linkers for PDMS networks with enhanced dielectric permittivity and low dielectric loss

    DEFF Research Database (Denmark)

    Bahrt, Frederikke; Daugaard, Anders Egede; Hvilsted, Søren

    2013-01-01

    Dipole grafted cross-linkers were utilized to prepare polydimethylsiloxane (PDMS) elastomers with various chain lengths and with various concentrations of functional cross-linker. The grafted cross-linkers were prepared by reaction of two alkyne-functional dipoles, 1-ethynyl-4-nitrobenzene and 3......-(4-((4-nitrophenyl)diazenyl)phenoxy)-prop-1-yn-1-ylium, with a synthesized silicone compatible azide-functional cross-linker by click chemistry. The thermal, mechanical and electromechanical properties were investigated for PDMS films with 0 to 3.6 wt% of dipole-cross-linker. The relative dielectric permittivity...

  18. Structural investigations on PbO-Sb{sub 2}O{sub 3}-B{sub 2}O{sub 3}:CoO glass ceramics by means of spectroscopic and dielectric studies

    Energy Technology Data Exchange (ETDEWEB)

    Satyanarayana, T; Gandhi, Y; Veeraiah, N [Department of Physics, Acharya Nagarjuna University-Nuzvid Campus, Nuzvid 521 201, AP (India); Kityk, I V [Electrical Engineering Department, Technological University of Czesdothcowa, Aleja Armii Krajowej 17/19, PL-42-201 Czestochowa (Poland); Piasecki, M; Bragiel, P [Institute of Physics, J Dlugosz University Czestochowa, Aleja Armii Krajowej 13/15, 42-200 Czestochowa (Poland); Brik, M G [Institute of Physics, University of Tartu, Riia 142, Tartu 51014 (Estonia)], E-mail: nvr8@rediffmail.com

    2009-06-17

    PbO-Sb{sub 2}O{sub 3}-B{sub 2}O{sub 3} glasses mixed with different concentrations of CoO (ranging from 0 to 2.0 mol%) were crystallized. The samples were characterized by x-ray diffraction, scanning electron microscopy and differential scanning calorimetric techniques. The x-ray diffraction and scanning electron microscopic studies have revealed the presence of CoSb{sub 2}O{sub 6}, Co{sub 2.33}Sb{sub 0.67}O{sub 4}, Pb{sub 5}Sb{sub 2}O{sub 8},Pb{sub 3}(SbO{sub 4}){sub 2}, PbB{sub 4}O{sub 7} and Co{sub 3}O{sub 4} crystalline phases in these samples. The DSC studies have indicated the spreading of the crystallization from the inside to the surface of the samples as the concentration of the crystallizing agent is increased. The IR and Raman spectroscopic studies have pointed out the existence of conventional BO{sub 3}, BO{sub 4}, SbO{sub 4} and also Co{sup III}-O structural units in the glass ceramic samples. These studies have further indicated the decreasing concentration of symmetrical structural vibrational groups with increase in the concentration of CoO. The results of various studies, namely dielectric properties over a range of frequency and temperature, photo-induced birefringence, optical absorption, fluorescence and magnetic susceptibility at room temperature of PbO-Sb{sub 2}O{sub 3}-B{sub 2}O{sub 3}:CoO glass ceramics, have also been reported. The variations observed as a function of the concentration of crystallizing agent in all these properties have been analyzed in the light of different oxidation states and environments of cobalt ions in the glass ceramic network.

  19. End moldings for cable dielectrics

    Energy Technology Data Exchange (ETDEWEB)

    Roose, L.D.

    1993-12-31

    End moldings for high-voltage cables are described wherein the dielectric insulator of the cable is heated and molded to conform to a desired shape. As a consequence, high quality substantially bubble- free cable connectors suitable for mating to premanufactured fittings are made. Disclosed are a method for making the cable connectors either in the field or in a factory, molds suitable for use with the method, and the molded cable connectors, themselves.

  20. Cavity optomechanics with arrays of thick dielectric membranes

    CERN Document Server

    Nair, Bhagya; Dantan, Aurelien

    2016-01-01

    Optomechanical arrays made of structured flexible dielectrics are a promising system for exploring quantum and many-body optomechanical phenomena. We generalize investigations of the optomechanical properties of periodic arrays of one-dimensional scatterers in optical resonators to the case of vibrating membranes whose thickness is not necessarily small with respect to the optical wavelength of interest. The array optical transmission spectrum and its optomechanical coupling with a linear Fabry-Perot cavity field are investigated both analytically and numerically.

  1. Cavity optomechanics with arrays of thick dielectric membranes

    Science.gov (United States)

    Nair, Bhagya; Xuereb, André; Dantan, Aurélien

    2016-11-01

    Optomechanical arrays made of structured flexible dielectrics are a promising system for exploring quantum and many-body optomechanical phenomena. We generalize investigations of the optomechanical properties of periodic arrays of one-dimensional scatterers in optical resonators to the case of vibrating membranes whose thickness is not necessarily small with respect to the optical wavelength of interest. The array optical transmission spectrum and its optomechanical coupling with a linear Fabry-Perot cavity field are investigated both analytically and numerically.

  2. Dielectric relaxation of samarium aluminate

    Energy Technology Data Exchange (ETDEWEB)

    Sakhya, Anup Pradhan; Dutta, Alo; Sinha, T.P. [Bose Institute, Department of Physics, Kolkata (India)

    2014-03-15

    A ceramic SmAlO{sub 3} (SAO) sample is synthesized by the solid-state reaction technique. The Rietveld refinement of the X-ray diffraction pattern has been done to find the crystal symmetry of the sample at room temperature. An impedance spectroscopy study of the sample has been performed in the frequency range from 50 Hz to 1 MHz and in the temperature range from 313 K to 573 K. Dielectric relaxation peaks are observed in the imaginary parts of the spectra. The Cole-Cole model is used to analyze the dielectric relaxation mechanism in SAO. The temperature-dependent relaxation times are found to obey the Arrhenius law having an activation energy of 0.29 eV, which indicates that polaron hopping is responsible for conduction or dielectric relaxation in this material. The complex impedance plane plot of the sample indicates the presence of both grain and grain-boundary effects and is analyzed by an electrical equivalent circuit consisting of a resistance and a constant-phase element. The frequency-dependent conductivity spectra follow a double-power law due to the presence of two plateaus. (orig.)

  3. Theory of dielectric loss in Graphene-on-substrate: A tight- binding model study

    Science.gov (United States)

    Sahu, Sivabrata; Panda, S. K.; Rout, G. C.

    2016-09-01

    dielectric loss is investigated and compared with the experimental results.

  4. Electromechanical performance analysis of inflated dielectric elastomer membrane for micro pump applications

    Science.gov (United States)

    Saini, Abhishek; Ahmad, Dilshad; Patra, Karali

    2016-04-01

    Dielectric elastomers have received a great deal of attention recently as potential materials for many new types of sensors, actuators and future energy generators. When subjected to high electric field, dielectric elastomer membrane sandwiched between compliant electrodes undergoes large deformation with a fast response speed. Moreover, dielectric elastomers have high specific energy density, toughness, flexibility and shape processability. Therefore, dielectric elastomer membranes have gained importance to be applied as micro pumps for microfluidics and biomedical applications. This work intends to extend the electromechanical performance analysis of inflated dielectric elastomer membranes to be applied as micro pumps. Mechanical burst test and cyclic tests were performed to investigate the mechanical breakdown and hysteresis loss of the dielectric membrane, respectively. Varying high electric field was applied on the inflated membrane under different static pressure to determine the electromechanical behavior and nonplanar actuation of the membrane. These tests were repeated for membranes with different pre-stretch values. Results show that pre-stretching improves the electromechanical performance of the inflated membrane. The present work will help to select suitable parameters for designing micro pumps using dielectric elastomer membrane. However this material lacks durability in operation.This issue also needs to be investigated further for realizing practical micro pumps.

  5. Electrical conductivity and dielectric studies of MnO2 doped V2O5

    Science.gov (United States)

    Tan, Foo Khoon; Hassan, Jumiah; Wahab, Zaidan Abd.; Azis, Raba'ah Syahidah

    The investigation on electrical conductivity and dielectric properties of mixed oxide of manganese (Mn) and vanadium (V) was carried out to study the mixed oxides response to different frequencies and different measuring temperatures. The frequency and temperature dependence of AC conductivity, dielectric constant and dielectric loss factor of mixed oxides were studied in the frequency range of 40 Hz-1 MHz and a temperature range of 30-250 °C. Since the mixed oxides are multi phase materials, hence the properties of the pure oxides are also presented in this study to discuss the multi phase behaviour of the mixed oxides. The XRD pattern shows the Mn-V oxide is multiphase and quantitative phase analysis was performed to determine the relative phases. The overall results indicate that with increasing temperature, the AC conductivity, dielectric constant, dielectric loss factor and loss tangent of the Mn-V mixed oxide increases. However, it shows an overlap in the dielectric constant at 225 °C and 250 °C due to the V2O5 phase in the mixed oxide. From the AC activation energy, the mixed oxides underwent conduction mechanism transition from band to hopping in the investigated frequency range. The MnV2O6 has relatively good resistivity, therefore the mixed oxide sintered at 550 °C with the highest composition of MnV2O6 gives the highest dielectric constant of 9845 at 1 kHz, and at 250 °C.

  6. Study on the interfacial adhesion property of low-k thin film by the surface acoustic waves with cohesive zone model

    Science.gov (United States)

    Xiao, Xia; Qi, Haiyang; Tao, Ye; Kikkawa, Takamaro

    2016-12-01

    The cohesive zone model being increasingly used in discrete fracture processes simulation is adopted to study the interfacial adhesion property of low dielectric constant film deposited on the silicon substrate in this work. The two parameters, maximum normal traction and normal interface characteristic length in cohesive zone model, are taken into account to calculate the theoretical surface acoustic wave dispersion curves. Broadband surface acoustic wave signals with effective frequency up to 200 MHz are generated by short pulse ultraviolet laser source and detected by a piezoelectric transducer. The interfacial adhesion properties of dense and porous films determined accurately by matching the experimental dispersion curves with the calculated theoretical dispersion curves are 10.7 PPa/m and 2.8 PPa/m, respectively. The results show that the adhesion quality of dense low dielectric constant film is better than that of the porous. The study exhibits that the adhesion properties determined by improved laser-generated surface acoustic wave technique have the same trends with the test results of the nanoscratch technique, which indicates that the surface acoustic wave technique with cohesive zone model is a promising and nondestructive method for determining interfacial adhesion properties between low dielectric constant film and substrate.

  7. An investigation on phase transition behaviors in MgO-doped Pb{sub 0.99}(Zr{sub 0.95}Ti{sub 0.05}){sub 0.98}Nb{sub 0.02}O{sub 3} ferroelectric ceramics by Raman and dielectric measurements

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Junxia, E-mail: wjunxia2002@163.com [Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010 (China); Wang, Genshui; Chen, Xuefeng [Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Hu, Zhigao [Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241 (China); Nie, Hengchang; Cao, Fei [Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Dong, Xianlin, E-mail: xldong@mail.sic.ac.cn [Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China)

    2015-03-15

    Highlights: • The phase transition behaviors were strongly dependent on MgO concentration. • The F{sub R(LT)}–F{sub R(HT)} phase transition temperature obviously shifted toward a lower temperature with increasing MgO addition. • The F{sub R(HT)}–cubic paraelectric (P{sub C}) phase transition changed to a higher temperature with increasing MgO addition. • The distortion of BO{sub 6} oxygen octahedron caused by B-site replacement of Mg{sup 2+} ions is proposed to explain the observed behaviors. • Superior room-temperature pyroelectric properties were obtained in 0.1 wt% MgO-modified PZTN 95/5 ceramics during F{sub R(LT)}–F{sub R(HT)} phase transition. - Abstract: The phase transition behaviors of Pb{sub 0.99}(Zr{sub 0.95}Ti{sub 0.05}){sub 0.98}Nb{sub 0.02}O{sub 3} ferroelectric ceramics doped with different MgO concentrations (0–0.2 wt%) were systematically investigated by Raman and dielectric measurements. Raman results showed that the phase transitions were strongly dependent on MgO concentration. It was found that the low temperature rhombohedral (F{sub R(LT)})–high temperature rhombohedral (F{sub R(HT)}) ferroelectric phase transition shifted toward a lower temperature with increasing MgO concentration up to 0.1 wt%, while the F{sub R(HT)}–cubic paraelectric (P{sub C}) phase transition changed to a higher temperature. The Raman results were in good agreement with phase transition determined by dielectric measurements. Moreover, it was indicated that the changes of Raman active modes were related to distortion of BO{sub 6} octahedra during the phase transitions. Then, the distortion of BO{sub 6} octahedron caused by B-site replacement of Mg{sup 2+} ions was proposed to explain the observed behaviors. In addition, the effects of MgO doping on the dielectric, ferroelectric and pyroelectric properties were also discussed.

  8. Voltage-induced pinnacle response in the dynamics of dielectric elastomers

    Science.gov (United States)

    Li, Bo; Zhang, Junshi; Chen, Hualing; Li, Dichen

    2016-05-01

    A dielectric elastomer is capable of large deformation under alternating electromechanical excitation. In this paper, several dynamic properties of a dielectric elastomer are investigated, in particular the effect of strain stiffening. A theoretical model is established that shows that the bias voltage affects the amplitude and the response waveform during vibration, a curve with the shape of a pinnacle. We also describe the underlying physical mechanism by considering the molecular chain length and cross-linking density of the material. A phase portrait is presented that reveals the transitional behavior of the dielectric elastomer as it switches between soft and stiffened vibration states.

  9. Dielectric relaxation and birefringence study of 7.O5O.7 dimeric liquid crystal compound

    Science.gov (United States)

    Bhattacharjee, Debanjan; Paul-Choudhury, Sandip; Alapati, Parameswara Rao; Bhattacharjee, Ayon

    2016-05-01

    Measurement of dielectric relaxation and birefringence phenomenon of dimeric liquid crystal compound with the dependence of temperature was reported in this paper. Homogeneous (HG) and homeotropic (HT) alignment of the cell are introduced to investigate the dielectric relaxation, activation energy and birefringence. Cole-Cole plots analyzed the dielectric relaxation of the dimeric compound. The observed Cole-Cole plots were semi-circular, and the relaxation mechanism obeys the non-Debye type of relaxation behaviour. Slater's perturbation equations have been used to analysis the activation energy of the compound. The birefringence of the compound has positively anisotropy and thin prism mechanism was used to study the anisotropy of the compound.

  10. Hybrid surface waves in semi-infinite metal-dielectric lattices

    CERN Document Server

    Miret, Juan J; Jaksic, Zoran; Vukovic, Slobodan; Belic, Milivoj R

    2012-01-01

    We investigate surface waves at the boundary between a semi-infinite layered metal-dielectric nanostructure cut normally to the layers and a semi-infinite dielectric. Spatial dispersion properties of such a nanostructure can be dramatically affected by coupling of surface plasmons polaritons at different metal-dielectric interfaces. As a consequence, the effective medium approach is not applicable in general. It is demonstrated that Dyakonov-like surface waves with hybrid polarization can propagate in an angular range substantially enlarged compared to conventional birefringent materials. Our numerical simulations for an Ag-GaAs stack in contact with glass show a low to moderate influence of losses.

  11. The radiation-induced galvanic effect at a metal-dielectric interface

    Science.gov (United States)

    Zaitsev, V. I.; Barykov, I. A.; Kartashov, A. V.; Terent'ev, O. V.; Rodionov, N. B.

    2016-11-01

    The effect observed upon interaction between the electromagnetic radiation with quantum energy of 25-1000 eV and a dielectric with metal coating is investigated. The radiation source was a megampere Z-pinch. Measurements performed on optical glass samples showed that radiation with a power of 106 W/cm2 in the electric circuit switching on the metalized dielectric induces the current. It is shown that the observed galvanic effect originates from the generation of hot electrons in the dielectric.

  12. Dielectric and Ferroelectric Properties of Nd-Doped Bi4Ti3O12

    Institute of Scientific and Technical Information of China (English)

    Mao Xiangyu; Chen Xiaobing

    2004-01-01

    The investigations on the ferroelectric and dielectric properties of neodymium-doped Bi4Ti3O12 (Bi4-xNdxTi3 O12 ) ferroelectric ceramics were presented. The ferroelectric properties of Bi4Ti3 O12 were improved by Nd-doping.The dielectric property measurements indicate that the Curie temperatures of Bi4-xNdxTi3O12 decrease with Nd-doping.The variations of dielectric loss suggest that the mobility of the domain wall increases and the oxygen vacancy concentration decreases with doping.

  13. Electrical conductivity and dielectric measurements of CoMTPP

    Energy Technology Data Exchange (ETDEWEB)

    El-Nahass, M.M., E-mail: prof_nahhas@yahoo.com [Physics Department, Faculty of Education, Ain Shams University, Roxy Square 11757, Cairo (Egypt); Atta, A.A. [Physics Department, Faculty of Education, Ain Shams University, Roxy Square 11757, Cairo (Egypt); Department of Physics, Faculty of Science, Taif University, Taif 888 (Saudi Arabia); El-Zaidia, E.F.M.; Farag, A.A.M. [Physics Department, Faculty of Education, Ain Shams University, Roxy Square 11757, Cairo (Egypt); Ammar, A.H. [Physics Department, Faculty of Education, Ain Shams University, Roxy Square 11757, Cairo (Egypt); Physics Department, Faculty of Science and Arts, Taibah University, Al-Ola (Saudi Arabia)

    2014-01-15

    Results of X-ray diffraction patterns (XRD) show that the powder of 5,10, 15,20-Tetrakis(4-methoxyphenyl)-21H,23H-porphine cobalt(II) (CoMTPP) has polycrystalline nature with triclinic structure. Miller's indices, (hkl), values for each diffraction peak in XRD spectrum are calculated. The electrical conductivity and dielectric properties of bulk CoMTPP have been investigated in the frequency range 42 Hz–5 MHz and in the temperature range 298–413 K. The frequency dependence of electrical conductivity, σ (ω, Τ), follows the Jonscher's universal dynamic law. The obtained results have been discussed in terms of the correlated barrier hopping (CBH) model, which is well adapted to CoMTPP semiconductor material. Complex impedance data are obtained at different frequency and temperature. The best fitting for the Cole–Cole plots can be represented by an equivalent circuit element composed of RQC. The conductivity in the direct regime, σ{sub dc}, is described by the variable range hopping (VRH). The values of dielectric constant, ε{sup ′} (ω), and dielectric loss, ε″ (ω), are found to be decrease with increasing frequency due to the interface states capacitance. - Highlights: • Investigation of the structural characterization of CoMTPP thin films using XRD. • The applicability of the CBH model to CoMTPP films. • Impedance spectroscopy is a very useful technique in solid state electronic system. • Dielectric constant and dielectric loss values decrease by increasing frequency.

  14. A spiral antenna sandwiched by dielectric layers

    OpenAIRE

    Nakano, Hisamatsu; Ikeda, Masakazu; Hitosugi, Kazuo; Yamauchi, Junji

    2004-01-01

    An infinitesimally thin spiral antenna, sandwiched by bottom and top dielectric layers having the same relative permittivity, is analyzed under the condition that the dielectric layers are of finite extent and the antenna is backed by an infinite conducting plane. As the thickness of the top dielectric layer increases, the input impedance and axial ratio (AR) vary in an oscillatory fashion, with a period slightly larger than one-half of the guided wavelength of a wave propagating in an unboun...

  15. Decoherence in Josephson Qubits from Dielectric Loss

    OpenAIRE

    Martinis, John M.; Cooper, K. B.; McDermott, R.; Steffen, Matthias; Ansmann, Markus; Osborn, K; Cicak, K.; Oh, S.; Pappas, D. P.; Simmonds, R. W.; Yu, Clare C

    2005-01-01

    Dielectric loss from two-level states is shown to be a dominant decoherence source in superconducting quantum bits. Depending on the qubit design, dielectric loss from insulating materials or the tunnel junction can lead to short coherence times. We show that a variety of microwave and qubit measurements are well modeled by loss from resonant absorption of two-level defects. Our results demonstrate that this loss can be significantly reduced by using better dielectrics and fabricating junctio...

  16. Superoxide Anions Are Involved in Mediating the Effect of Low K Intake on c-Src Expression and Renal K Secretion in the Cortical Collecting Duct*

    Science.gov (United States)

    Babilonia, Elisa; Wei, Yuan; Sterling, Hyacinth; Kaminski, Pawel; Wolin, Michael; Wang, Wen-Hui

    2010-01-01

    We previously demonstrated that low K intake stimulated the expression of c-Src and that stimulation of protein tyrosine kinase inhibited ROMK channel activity (Wei, Y., Bloom, P., Lin, D. H., Gu, R. M., and Wang, W. H. (2001) Am. J. Physiol. 281, F206–F212). Decreases in dietary K content significantly increased O2·¯ levels and the phosphorylation of c-Jun, a transcription factor, in renal cortex and outer medulla. The role of O2·¯ and related products such as H2O2 in stimulating the expression of protein tyrosine kinase is suggested by the observation that addition of 50–200 µM H2O2 increased the phosphorylation of c-Jun and the expression of c-Src in M1 cells, a mouse collecting duct principal cell line. The effect of H2O2 on c-Src expression was completely abolished with cyclohexamide or actinomycin D. The treatment of animals on a K-deficient (KD) diet with tempol for 7 days significantly decreased the production of O2·¯, c-Jun phosphorylation, and c-Src expression. Moreover, low K intake decreased the activity of ROMK-like small conductance channels from 1.37 (control K diet) to 0.5 in the cortical collecting duct and increased the tyrosine phosphorylation of ROMK in the renal cortex and outer medulla. In contrast, the tempol treatment not only increased channel activity to 1.1 in the cortical collecting duct but also decreased the tyrosine phosphorylation of ROMK from rats on a KD diet. Finally, suppressing O2·¯ production with tempol significantly increased renal K excretion measured with metabolic cage and lowered the plasma K concentration in comparison with those on a KD diet alone without tempol. We conclude that O2·¯ and related products play a role in mediating the effect of low K intake on c-Src expression and in suppressing ROMK channel activity and renal K secretion. PMID:15644319

  17. Effective Dielectric Response of Nonlinear Composites of Coated Metal Inclusions

    Institute of Scientific and Technical Information of China (English)

    CHEN Guo-Qing; WU Ya-Min

    2007-01-01

    The effective dielectric response of the composites in which nondilute coated metal particles are randomly embedded in a linear host is investigated. Two types of coated particles are considered, one is that the core is nonlinear, the other is that the shell is nonlinear. We derive general expressions for the effective linear dielectric function and the effective third-order nonlinear susceptibility, and take one step forward to perform numerical calculations on the coated metal/dielectric composites. Numerical results show that the effective linear and nonlinear dielectric responses can be greatly enhanced near the surface plasmon resonant frequency. Moreover, the resonant peaks are found within a range from 0.46ωp to 0.57ωp for spherical particles and from 0.59ωp to 0.7ωp for cylindrical inclusions. In the frequency region, the resonant peak can achieve the maximum, according to an optimal structural parameter and volume fraction. The resonant frequency exhibits a redshift with the increasing structural parameter k or volume fraction f or dimensionality factor D.

  18. Ionic mobility in DNA films studied by dielectric spectroscopy.

    Science.gov (United States)

    Kahouli, Abdelkader; Valle-Orero, Jessica; Garden, Jean-Luc; Peyrard, Michel

    2014-09-01

    Double-helix DNA molecules can be found under different conformational structures driven by ionic and hydration surroundings. Usually, only the B-form of DNA, which is the only form stable in aqueous solution, can be studied by dielectric measurements. Here, the dielectric responses of DNA molecules in the A- and B-form, oriented co-linearly within fibres assembled in a film have been analyzed. The dielectric dispersion, permittivity and dissipation factor, have been measured as a function of frequency, strength voltage, time, temperature and nature of the counter-ions. Besides a high electrode polarization component, two relaxation peaks have been observed and fitted by two Cole-Cole relaxation terms. In the frequency range that we investigated (0.1 Hz to 5 ·10(6) Hz) the dielectric properties are dominated by the mobility and diffusivity of the counter-ions and their interactions with the DNA molecules, which can therefore be characterized for the A- and B-forms of DNA.

  19. Dielectric relaxation dynamics of high-temperature piezoelectric polyimide copolymers

    Science.gov (United States)

    Maceiras, A.; Costa, C. M.; Lopes, A. C.; San Sebastián, M.; Laza, J. M.; Vilas, J. L.; Ribelles, J. L. Gómez; Sabater i Serra, R.; Andrio Balado, A.; Lanceros-Méndez, S.; León, L. M.

    2015-08-01

    Polyimide copolymers have been prepared based on different diamines as comonomers: a diamine without CN groups and a novel synthesized diamine with two CN groups prepared by polycondensation reaction followed by thermal cyclodehydration. Dielectric spectroscopy measurements were performed, and the dielectric complex function, ac conductivity and electric modulus of the copolymers were investigated as a function of CN group content in the frequency range from 0.1 to 107 Hz at temperatures from 25 to 260 °C. For all samples and temperatures above 150 °C, the dielectric constant increases with increasing temperature due to increasing conductivity. The α-relaxation is just detected for the sample without CN groups, being this relaxation overlapped by the electrical conductivity contributions in the remaining samples. For the copolymer samples and the polymer with CN groups, an important Maxwell-Wagner-Sillars contribution is detected. The mechanisms responsible for the dielectric relaxation, conduction process and electric modulus response have been discussed as a function of the CN group content present in the samples.

  20. Dielectric and structural properties of ferroelectric betaine arsenate films

    Science.gov (United States)

    Balashova, E. V.; Krichevtsov, B. B.; Zaitseva, N. V.; Yurko, E. I.; Svinarev, F. B.

    2014-12-01

    Ferroelectric films of betaine arsenate and partially deuterated betaine arsenate have been grown by evaporation on LiNbO3, α-Al2O3, and NdGaO3 substrates with a preliminarily deposited structure of interdigitated electrodes, as well as on the Al/glass substrate. This paper presents the results of the examination of the block structure of the films in a polarizing microscope, the X-ray diffraction analysis of their crystal structure, and the investigation of the dielectric properties in a measuring field oriented both parallel and perpendicular to the plane of the film. The transition of the films to the ferroelectric state at T = T c is accompanied by anomalies of the capacitance of the structure, an increase in the dielectric loss, and the appearance of dielectric hysteresis loops. The growth of the films from a solution of betaine arsenate in a heavy water leads to an increase in the ferroelectric transition temperature from T c = 119 K in the films without deuterium to T c = 149 K, which corresponds to the degree of deuteration of approximately 60-70%. The dielectric and structural properties of the films are compared with those of the betaine arsenate single crystals and the previously studied films of betaine phosphite and glycine phosphite.

  1. Hybrid energy harvesting systems, using piezoelectric elements and dielectric polymers

    Science.gov (United States)

    Cornogolub, Alexandru; Cottinet, Pierre-Jean; Petit, Lionel

    2016-09-01

    Interest in energy harvesting applications has increased a lot during recent years. This is especially true for systems using electroactive materials like dielectric polymers or piezoelectric materials. Unfortunately, these materials despite multiple advantages, present some important drawbacks. For example, many dielectric polymers demonstrated high energy densities; they are cheap, easy to process and can be easily integrated in many different structures. But at the same time, dielectric polymer generators require an external energy supply which could greatly compromise their autonomy. Piezoelectric systems, on the other hand, are completely autonomous and can be easily miniaturized. However, most common piezoelectric materials present a high rigidity and are brittle by nature and therefore their integration could be difficult. This paper investigates the possibility of using hybrid systems combining piezoelectric elements and dielectric polymers for mechanical energy harvesting applications and it is focused mainly on the problem of electrical energy transfer. Our objective is to show that such systems can be interesting and that it is possible to benefit from the advantages of both materials. For this, different configurations were considered and the problem of their optimization was addressed. The experimental work enabled us to prove the concept and identify the main practical limitations.

  2. Development of a dielectric ceramic based on diatomite-titania part two: dielectric properties characterization

    Directory of Open Access Journals (Sweden)

    Medeiros Jamilson Pinto

    1998-01-01

    Full Text Available Dielectric properties of sintered diatomite-titania ceramics are presented. Specific capacitance, dissipation factor, quality factor and dielectric constant were determined as a function of sintering temperature, titania content and frequency; the temperature coefficient of capacitance was measured as a function of frequency. Besides leakage current, the dependence of the insulation resistance and the dielectric strength on the applied dc voltage were studied. The results show that diatomite-titania compositions can be used as an alternative dielectric.

  3. Nonstationary photonic jet from dielectric microsphere

    CERN Document Server

    Geints, Yu; Zemlyanov, A

    2014-01-01

    A photonic jet commonly denotes the specific spatially localized region in the near-field forward scattering of a light wave at a dielectric micron-sized particle. We present the detailed calculations of the transient response of an airborne silica microsphere illuminated by a femtosecond laser pulse. The spatial area constituting the photonic jet is theoretically investigated and the temporal dynamics of jet dimensions as well as of jet peak intensity is analyzed. The role of morphology-dependent resonances in jet formation is highlighted. The evolution scenario of a nonstationary photonic jet generally consists of the non-resonant and resonant temporal phases. In every phase, the photonic jet can change its spatial form and intensity.

  4. Electrical breakdown phenomena of dielectric elastomers

    DEFF Research Database (Denmark)

    Yu, Liyun; Mateiu, Ramona Valentina; Skov, Anne Ladegaard

    years. However, optimization with respect to the dielectric permittivity solely may lead to other problematic phenomena such as premature electrical breakdown. In this work, we focus on the chloro propyl functionalized silicone elastomers prepared in Madsen et al[2] and we investigate the electrical...... breakdown patterns of two similar chloro propyl functionalized silicone elastomers which break down electrically in a rather different way as well as we compare them to a silicone based reference. Thermogravimetric analysis (TGA) and scanning electron microscopy (SEM) are used to evaluate the elastomers...... before and after electrical breakdown. It was shown the chemically very similar silicone elastomers broke down electrically in very different ways. These observations emphasize that the modification of the silicone backbone may open up for completely new possibilities for stabilizing the silicone...

  5. Wideband P-Shaped Dielectric Resonator Antenna

    Directory of Open Access Journals (Sweden)

    M.Khalily

    2013-04-01

    Full Text Available A novel P-shaped dielectric resonator antenna (DRA is presented and investigated for wideband wireless application. By using P-shaped resonator, a wideband impedance bandwidth of 80% from 3.5 to 8.2 GHz is achieved. The antenna covers all of wireless systems like C-band, 5.2, 5.5 and 5.8 GHz-WLAN and WiMax. The proposed antenna has a low profile and the thickness of the resonator is only 5.12 mm, which is 0.06-0.14 free space wavelength. A parametric study is presented. The proposed DRA is built and the characteristics of the antenna are measured. Very good agreement between numerical and measured results is obtained.

  6. Multiscale dipole relaxation in dielectric materials

    DEFF Research Database (Denmark)

    Hansen, Jesper Schmidt

    2016-01-01

    the cross coupling between the electric field fluctuations and dipole moment fluctuations can be ignored. The peak frequencies in the spectra of the autocorrelation functions are also derived. They depend on the wave vector squared which is a fingerprint of the underlying dipole diffusion mechanism....... For the longitudinal direction the simulation results show that the cross coupling between the electric field and the dipole moment is non-negligible compromising the theoretical predictions. The underlying mechanism for this coupling is not clear.......Dipole relaxation from thermally induced perturbations is investigated on different length scales for dielectric materials. From the continuum dynamical equations for the polarisation, expressions for the transverse and longitudinal dipole autocorrelation functions are derived in the limit where...

  7. Transmission fingerprints in quasiperiodic dielectric multilayers

    Science.gov (United States)

    Vasconcelos, M. S.; Albuquerque, E. L.

    1999-05-01

    We investigate the optical transmission fingerprints in structures that exhibit deterministic disorders. A class of models that has attracted particular attention in this context are the quasiperiodic dielectric multilayers that obey a substitutional sequence. These substitutional sequence are characterized by the nature of their Fourier spectrum, which can be dense pure point (Fibonacci sequences), singular continuous (Thue-Morse and double-period sequences), and absolutely continuous (Rudin-Shapiro sequence). We use a transfer-matrix approach to derive the optical transmission coefficients. Numerical results are presented to illustrate the self-similar aspect of the spectra, as well as to show the optical fingerprint through a return map of the transmission coefficients.

  8. Terahertz-frequency dielectric response of liquids

    DEFF Research Database (Denmark)

    Jepsen, Peter Uhd; Møller, Uffe; Cooke, David

    -induced dipole moments. In the polar liquid water the fastest relaxational dynamics is found at terahertz frequencies, just below the first intermolecular vibrational and librational modes. In this presentation we will discuss optical terahertz spectroscopic techniques for measurement of the full dielectric......The dielectric response of liquids spans many decades in frequency. The dielectric response of a polar liquid is typically determined by relaxational dynamics of the dipolar moments of the liquid. In contrast, the dielectric response of a nonpolar liquid is determined by much weaker collision...

  9. Terahertz-frequency dielectric response of liquids

    DEFF Research Database (Denmark)

    Jepsen, Peter Uhd; Møller, Uffe; Cooke, David

    -induced dipole moments. In the polar liquid water the fastest relaxational dynamics is found at terahertz frequencies, just below the first intermolecular vibrational and librational modes. In this presentation we will discuss optical terahertz spectroscopic techniques for measurement of the full dielectric......The dielectric response of liquids spans many decades in frequency. The dielectric response of a polar liquid is typically determined by relaxational dynamics of the dipolar moments of the liquid. In contrast, the dielectric response of a nonpolar liquid is determined by much weaker collision...

  10. Dielectric Resonator Metasurface for Dispersion Engineering

    CERN Document Server

    Achouri, Karim; Gupta, Shulabh; Rmili, Hatem; Caloz, Christophe

    2016-01-01

    We introduce a practical dielectric metasurface design for microwave frequencies. The metasurface is made of an array of dielectric resonators held together by dielectric connections thus avoiding the need of a mechanical support in the form of a dielectric slab and the spurious multiple reflections that such a slab would generate. The proposed design can be used either for broadband metasurface applications or monochromatic wave transformations. The capabilities of the concept to manipulate the transmission phase and amplitude of the metasurface are supported by numerical and experimental results. Finally, a half-wave plate and a quarter-wave plate have been realized with the proposed concept.

  11. Optical studies of multilayer dielectric-metal-dielectric coatings as applied to solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Demichelis, F.; Minetti-Mezzetti, E.; Perotto, V.

    1982-09-01

    A study of antireflection coatings for solar cells which provide maximum transmittance in the range of the spectral response of the cell and maximum reflectance in the IR portion of the spectrum of normally incident radiation is reported. Dielectric-metal-dielectric filters with a relatively low number of dielectric layers are designed as coatings for silicon and GaAs solar cells.

  12. Silicone elastomers with high dielectric permittivity and high dielectric breakdown strength based on tunable functionalized copolymers

    DEFF Research Database (Denmark)

    Madsen, Frederikke Bahrt; Yu, Liyun; Daugaard, Anders Egede;

    2015-01-01

    High driving voltages currently limit the commercial potential of dielectric elastomers (DEs). One method used to lower driving voltage is to increase dielectric permittivity of the elastomer. A novel silicone elastomer system with high dielectric permittivity was prepared through the synthesis o...

  13. Silicone elastomers with high dielectric permittivity and high dielectric breakdown strength based on tunable functionalized copolymers

    DEFF Research Database (Denmark)

    Madsen, Frederikke Bahrt; Yu, Liyun; Daugaard, Anders Egede

    2015-01-01

    High driving voltages currently limit the commercial potential of dielectric elastomers (DEs). One method used to lower driving voltage is to increase dielectric permittivity of the elastomer. A novel silicone elastomer system with high dielectric permittivity was prepared through the synthesis o...

  14. Effects of annealing conditions on the dielectric properties of solution-processed Al2O3 layers for indium-zinc-tin-oxide thin-film transistors.

    Science.gov (United States)

    Kim, Yong-Hoon; Kim, Kwang-Ho; Park, Sung Kyu

    2013-11-01

    In this paper, the effects of annealing conditions on the dielectric properties of solution-processed aluminum oxide (Al2O3) layers for indium-zinc-tin-oxide (IZTO) thin-film transistors (TFTs) have been investigated. The dielectric properties of Al2O3 layers such as leakage current density and dielectric strength were largely affected by their annealing conditions. In particular, oxygen partial pressure in rapid thermal annealing, and the temperature profile of hot plate annealing had profound effects on the dielectric properties. From a refractive index analysis, the enhanced dielectric properties of Al2O3 gate dielectrics can be attributed to higher film density depending on the annealing conditions. With the low-temperature-annealed Al2O3 gate dielectric at 350 degrees C, solution-processed IZTO TFTs with a field-effect mobility of approximately 2.2 cm2/Vs were successfully fabricated.

  15. Calculation of Dielectric Response in Molecular Solids for High Capacitance Organic Dielectrics

    Science.gov (United States)

    Heitzer, Henry Matthew

    The dielectric response of a material is critically important in numerous scientific processes spanning the fields of biology, chemistry, materials science, and physics. While important across these fundamental disciplines, it remains difficult to determine theoretically the dielectric environment of a system. With recent advances in nanotechnology, biochemistry, and molecular electronics, it has become necessary to determine the dielectric response in molecular systems that are difficult to measure experimentally, such as nanoscale interfaces, highly disordered biological environments, or molecular materials that are difficult to synthesize. In these scenarios it is highly advantageous to determine the dielectric response through efficient and accurate calculations. A good example of where a theoretical prediction of dielectric response is critical is in the development of high capacitance molecular dielectrics. Molecular dielectrics offer the promise of cheap, flexible, and mass producible electronic devices when used in conjunction with organic semiconducting materials to form Organic Field Effect Transistors (OFETs). To date, molecular dielectrics suffer from poor dielectric properties resulting in low capacitances. A low capacitance dielectric material requires a much larger power source to operate the device in OFETs, leading to modest device performance. Development of better performing dielectric materials has been hindered due to the time it takes to synthesize and fabricate new molecular materials. An accurate and efficient theoretical technique could drastically decrease this time by screening potential dielectric materials and providing design rules for future molecular dielectrics. Here in, the methodology used to calculate dielectric properties of molecular materials is described. The validity of the technique is demonstrated on model systems, capturing the frequency dependence of the dielectric response and achieving quantitative accuracy compared

  16. Extraction and dielectric properties of curcuminoid films grown on Si substrate for high-k dielectric applications

    Energy Technology Data Exchange (ETDEWEB)

    Dakhel, A.A.; Jasim, Khalil E. [Department of Physics, College of Science, University of Bahrain, P.O. Box 32038 (Bahrain); Cassidy, S. [Department of Basic Medical Sciences, Royal College of Surgeons in Ireland, Medical University of Bahrain, P.O. Box 15503 (Bahrain); Henari, F.Z., E-mail: fzhenari@rcsi-mub.com [Department of Basic Medical Sciences, Royal College of Surgeons in Ireland, Medical University of Bahrain, P.O. Box 15503 (Bahrain)

    2013-09-20

    Highlights: • The unknown insulating properties of curcuminoid extract are systematically studied. • Optical study gives a bandgap of 3.15 eV and a refractive index of 1.92 at 505 nm. • Turmeric is a high-k environmental friendly material for use in microelectronics. • Curcuminoid extract can be used as insulator of MIS devices with ε{sup ′}{sub ∞}≈54.2. -- Abstract: Curcuminoids were extracted from turmeric powder and evaporated in vacuum to prepare thin films on p-Si and glass substrates for dielectric and optical investigations. The optical absorption spectrum of the prepared amorphous film was not identical to that of the molecular one, which was identified by a strong wide absorption band in between ∼220 and 540 nm. The onset energy of the optical absorption of the film was calculated by using Hamberg et al. method. The dielectric properties of this material were systematically studied for future eco friendly applications in metal–insulator–semiconductor MIS field of applications. The complex dielectric properties were studied in the frequency range of 1–1000 kHz and was analysed in-terms of dielectric impedance Z{sup *}(ω) and modulus M{sup *}(ω). Generally, the curcuminoid complex can be considered as a high-k material and can be used in the environmental friendly production of microelectronic devices.

  17. Dielectric relaxation and pinning phenomenon of (Sr,Pb)TiO3 ceramics for dielectric tunable device application

    Science.gov (United States)

    Huang, Xian-Xiong; Zhang, Tian-Fu; Tang, Xin-Gui; Jiang, Yan-Ping; Liu, Qiu-Xiang; Feng, Zu-Yong; Zhou, Qi-Fa

    2016-09-01

    The behavior of ferroelectric domain under applied electric field is very sensitive to point defects, which can lead to high temperature dielectric relaxation behaviors. In this work, the phases, dielectric properties and ferroelectric switching behavior of strontium lead titanate ceramics were investigated. The structural characterization is confirmed by X-ray diffraction. The high dielectric tunability and high figure of merit of ceramics, especially Sr0.7Pb0.3TiO3 (SPT), imply that SPT ceramics are promising materials for tunable capacitor applications. Oxygen vacancies induced dielectric relaxation phenomenon is observed. Pinched shape hysteresis loops appeared in low temperature, low electric field or high frequency, whereas these pinched hysteresis loops also can become normal by rising temperature, enhancing electric field or lowering frequency. The pinning and depinning effect can be ascribed to the interaction between oxygen vacancies and domain switching. A qualitative model and a quantitative model are used to explain this phenomenon. Besides, polarization and oxygen treated experiment can exert an enormous influence on pinning effect and the machanisms are also discussed in this work.

  18. Electric field dependent dielectric response of alumina/silicone oil colloids

    Science.gov (United States)

    Magallon, Louis; Tsui, Stephen

    2014-03-01

    We investigate the dielectric response of a mixture of alumina nanopowder and silicone oil. Frequency and electric field dependent measurements of another insulating colloid, i.e., urea-coated Ba0.8Rb0.4TiO(C2O4)2 nanoparticles immersed in silicone oil, revealed universal dielectric response (UDR) characteristics and, with the application of high voltage, a negative capacitance. Alumina in silicone oil represents a simpler system in which to perform similar dielectric investigation. This colloid is sandwiched in a parallel plate capacitor cell, and the complex impedance is measured via lock-in amplifier at various frequencies and applied dc biases. Furthermore, we will compare and discuss the dielectric behaviors of different sized suspended alumina particles.

  19. Electrical and Dielectric Properties of Exfoliated Graphite/Polyimide Composite Films with Low Percolation Threshold

    Science.gov (United States)

    Yu, Li; Zhang, Yi-He; Shang, Jiwu; Ke, Shan-Ming; Tong, Wang-shu; Shen, Bo; Huang, Hai-Tao

    2012-09-01

    Exfoliated graphite/polyimide composite films were synthesized by in situ polymerization. The electrical and dielectric properties of composite films with different volume fraction of exfoliated graphite were investigated over the frequency range from 103 Hz to 3 × 106 Hz. The dielectric behavior of the composite films was investigated by percolation theory and a microcapacitor model. A low percolation threshold f c ≈ 3.1 vol.% was obtained due to the high aspect ratio of the exfoliated graphite. Both the dielectric constant and alternating-current (AC) conductivity showed an abrupt increase in the vicinity of the percolation threshold. The ultralarge enhancement of the dielectric constant near and beyond the percolation threshold was due to Maxwell-Wagner-Sillars (MWS) interfacial polarization between the exfoliated graphite and polyimide and interface polarization between the composite film and electrode.

  20. Comparison effects and dielectric properties of different dose methylene-blue-doped hydrogels.

    Science.gov (United States)

    Yalçın, O; Coşkun, R; Okutan, M; Öztürk, M

    2013-08-01

    The dielectric properties of methylene blue (MB)-doped hydrogels were investigated by impedance spectroscopy. The real part (ε') and the imaginary part (ε") of the complex dielectric constant and the energy loss tangent/dissipation factor (tan δ) were measured in the frequency range of 10 Hz to 100 MHz at room temperature for pH 5.5 value. Frequency variations of the resistance, the reactance, and the impedance of the samples have also been investigated. The dielectric permittivity of the MB-doped hydrogels is sensitive to ionic conduction and electrode polarization in low frequency. Furthermore, the dielectric behavior in high-frequency parts was attributed to the Brownian motion of the hydrogen bonds. The ionic conduction for MB-doped samples was prevented for Cole-Cole plots, while the Cole-Cole plots for pure sample show equivalent electrical circuit. The alternative current (ac) conductivity increases with the increasing MB concentration and the frequency.

  1. Water content of primitive low-K tholeiitic basalt magma from Iwate Volcano, NE Japan arc: implications for differentiation mechanism of frontal-arc basalt magmas

    Science.gov (United States)

    Kuritani, Takeshi; Yoshida, Takeyoshi; Kimura, Jun-Ichi; Hirahara, Yuka; Takahashi, Toshiro

    2014-02-01

    The water content of low-K tholeiitic basalt magma from Iwate volcano, which is located on the volcanic front of the NE Japan arc, was estimated using multi-component thermodynamic models. The Iwate lavas are moderately porphyritic, consisting of ~8 vol.% olivine and ~20 vol.% plagioclase phenocrysts. The olivine and plagioclase phenocrysts show significant compositional variations, and the Mg# of olivine phenocrysts (Mg#78-85) correlates positively with the An content of coexisting plagioclase phenocrysts (An85-92). The olivine phenocrysts with Mg# > ~82 do not form crystal aggregates with plagioclase phenocrysts. It is inferred from these observations that the phenocrysts with variable compositions were primarily derived from mushy boundary layers along the walls of a magma chamber. By using thermodynamic calculations with the observed petrological features of the lavas, the water content of the Iwate magma was estimated to be 4-5 wt.%. The high water content of the magma supports the recent consensus that frontal-arc magmas are remarkably hydrous. Using the estimated water content of the Iwate magma, the water content and temperature of the source mantle were estimated. Given that the Iwate magma was derived from a primary magma solely by olivine fractionation, the water content and temperature were estimated to be ~0.7 wt.% and ~1,310 °C, respectively. Differentiation mechanisms of low-K frontal-arc basalt magmas were also examined by application of a thermodynamics-based mass balance model to the Iwate magma. It is suggested that magmatic differentiation proceeds primarily through fractionation of crystals from the main molten part of a magma chamber when it is located at ~200 MPa.

  2. First-principles study on dielectric function of isolated and bundled carbon nanotubes

    Science.gov (United States)

    Yang, J. Y.; Liu, L. H.; Tan, J. Y.

    2015-06-01

    The dielectric function fundamentally determines the thermal radiative properties of nanomaterials. In this work, the first-principles method is applied to investigate the finite temperature dielectric function of isolated and bundled single-walled carbon nanotubes in the visible-ultraviolet spectral range without empirical models. The effects of diameter, intertube interactions and temperature on dielectric functions are discussed. The calculated extraordinary dielectric functions of four isolated (5,5), (6,6), (7,7) and (8,8) armchair nanotubes with different diameters are compared to study the diameter effect. It shows that the locations of absorption peaks of dielectric functions consistently shift to lower energy with increasing diameter. To analyze the influence of non-local intertube interactions, the dielectric functions of bundled (6,6) armchair nanotubes with varying intertube distance are calculated within the van der Waals theory. As nanotubes bundle together, the intertube interactions become strong and the absorption peaks enhance. The temperature effect is included into computing dielectric function of isolated (5,0) zigzag nanotubes via first-principles molecular dynamics method. It observes that the dominant absorption peak shifts to lower energy as temperature increases from 0 to 600 K. To interpret the temperature influence, the temperature perturbed density of states is presented.

  3. Current Progress of Hf (Zr)-Based High-k Gate Dielectric Thin Films

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    With the continued downscaling of complementary metal-oxide-semiconductor field effect transistor dimensions, high-dielectric constant (high-k) gate materials, as alternatives to SiO2, have been extensively investigated. Hf (Zr)-based high-k gate dielectric thin films have been regarded as the most promising candidates for high-k gate dielectric according to the International Technology Roadmap for Semiconductor due to their excellent physical properties and performance. This paper reviews the recent progress on Hf (Zr)-based high-k gate dielectrics based on PVD (physical vapor deposition) process. This article begins with a survey of various methods developed for generating Hf (Zr)-based high-k gate dielectrics, and then mainly focuses on microstructure, synthesis, characterization, formation mechanisms of interfacial layer, and optical properties of Hf (Zr)-based high-k gate dielectrics. Finally, this review concludes with personal perspectives towards future research on Hf (Zr)-based high-k gate dielectrics.

  4. Improvements of dielectric properties of Cu doped LaTiO3 þδ

    Institute of Scientific and Technical Information of China (English)

    Yan Chen; Jianxun Xu; Yimin Cui; Guangyi Shang; Jianqiang Qian; Jun-en Yao

    2016-01-01

    The ceramic composites of Cu-doped La1?xCuxTiO3þδ (x¼0.05, 0.15, 0.3, 0.5) were synthesized by con-ventional solid-state reaction. The complex dielectric properties of the composites were investigated as a function of temperature (77 KrTr320 K) and frequency (100 Hzrfr1 MHz) separately. In all com-posites, the dielectric constants increase monotonously and the dielectric loss undulates with tem-perature. And it is clearly observed that extraordinarily high low-frequency dielectric constant ( ? 104) appear at room temperature in La0.5Cu0.5TiO3þδ, which is ?100 times larger than that of La0.95Cu0.05TiO3 þδ. Interestingly, the dielectric constants increase remarkably with the doped Cu con-tents, meanwhile the dielectric loss for all samples is ideal lower than 1 at room temperature in the measured frequency range. By means of complex impedance analysis, the improvements of dielectric properties are attributed to both bulk contribution and grain boundary effect, in which the bulk polaronic relaxation and the Maxwell–Wagner relaxation due to grain boundary response are heightened re-markably with the high doped Cu contents.

  5. The Investigation of Ba_(6-3x)(Nd_(1-y)Bi_y)_(8+2x)Ti_(18)O_(54) Microwave Dielectric Ceramics%Ba_(6-3x)(Nd_(1-y)Bi_y)_(8+2x)Ti_(18)O_(54)系微波介电陶瓷的研究

    Institute of Scientific and Technical Information of China (English)

    王爽

    2009-01-01

    研究了Ba_(6-3x)(Nd_(1-y)Bi_y)_(8+2x)Ti_(18)O_(54)(x=0~1)陶瓷微波性能,并对其微观机理和晶体结构进行分析.随Bi_2O_3含量的增加,系统介电常数(ε)迅速增大,品质因数与频率的乘积(Q·f)逐渐减小.掺入Bi_2O_3后,系统中出现具有高ε的Bi_4Ti_3O_(12)晶相,并形成了类填满型钨青铜结构,阳离子极化增强,因此ε随Bi_2O_3含量的增加而增大.实验表明,当y=0.25~0.3时,Ba_(6-3x)(Nd_(1-y)Bi_y)_(8+2x)Ti_(18)O_(54)(x =0~1) 陶瓷具有优良的微波介电性能,其主要工艺条件和性能参数为烧结温度1 200 ℃保温4 h,ε≈102~107,Q·f≈20 000~22 000 GHz(1 GHz测量), 容量温度系数|α_c|<10×10~(-6)/℃.%The microwave properties of Ba_(6-3x)(Nd_(1-y)Bi_y)_(8+2x)Ti_(18)O_(54)(x =0~1)system were investigated,and the micro-mechanism and the crystal structure were analyzed.The results indicated that the dielectric constant increased greatly while the Q·f value decreased with the increase of Bi_2O_3 content.These phenomena were related to the appearance of a new phase Bi_4Ti_3O_(12),which has high dielectric constant. Besides, full-filled tungsten bronze-like structure should be formed,the polarization of positive ions were enhanced.So,the samples doped with Bi_2O_3 presented higher dielectric constant.The experimental results showed that Ba_(6-3x)(Nd_(1-y)Bi_y)_(8+2x)Ti_(18)O_(54) ceramics exhibited excellent microwave dielectric properties at y=0.25~0.3.The main technological conditions and the parameters were as follows: the sintering temperature of 1 200 ℃,the holding time of 4 h,ε≈102~107,Q·f≈20 000~22 000 GHz(Measured at 1 GHz) and the capacity-temperature coefficient of |α_c|<10×10~(-6)/℃.

  6. Dielectric Properties of Yttria Ceramics at High Temperature

    Institute of Scientific and Technical Information of China (English)

    Jian Chen; Zheng-Ping Gao; Jin-Ming Wang; Da-Hai Zhang

    2007-01-01

    Based on Clausius-Mosotti equation and Debye relaxation theory, the dielectric model of yttria ceramics was developed according to the dielectric loss mechanism. The dielectric properties of yttria ceramics were predicted at high temperature. The temperature dependence and frequency dependence of dielectric constant and dielectric loss were discussed, respectively.As the result, the data calculated by theoretical dielectric model are in agreement with experimental data.

  7. Total reflection and cloaking by zero index metamaterials loaded with rectangular dielectric defects

    KAUST Repository

    Wu, Ying

    2013-05-06

    In this work, we investigate wave transmission property through a zero index metamaterial (ZIM) waveguide embedded with rectangular dielectric defects. We show that total reflection and total transmission (cloaking) can be achieved by adjusting the geometric sizes and/or permittivities of the defects. Our work provides another possibility of manipulating wave propagation through ZIM in addition to the widely studied dielectric defects with cylindrical geometries.

  8. High dielectric permittivity elastomers from well-dispersed expanded graphite in low concentrations

    DEFF Research Database (Denmark)

    Daugaard, Anders Egede; Hassouneh, Suzan Sager; Kostrzewska, Malgorzata;

    2013-01-01

    The development of elastomer materials with a high dielectric permittivity has attracted increased interest over the last years due to their use in for example dielectric electroactive polymers. For this particular use, both the electrically insulating properties - as well as the mechanical...... by the addition of traditional fillers in the necessary amounts would either lose their stability or their softness. Furthermore the influence of several mixing procedures on the electrical and mechanical properties is investigated. © 2013 SPIE....

  9. Evaluating Volume Fractions of the Elements for Composite Laminates by Using Dielectric Properties

    Institute of Scientific and Technical Information of China (English)

    周胜; 储才元; 严灏景

    2001-01-01

    A series and parallel model for investigating the capacity of composite laminates and the relationship between the dielectric properties of the composites and its constituents are presented. Volume fractions of the constituents are considered in this study. The expression of the complex dielectric constants for evaluating volume fractions under discrete frequencies is established and the general solutions for the resultant linear simultaneous equations for system are also exploited.The results show that the high accuracy of proposed method is obtained.

  10. Zener tunneling in conductive graphite/epoxy composites: Dielectric breakdown aspects

    Directory of Open Access Journals (Sweden)

    S. C. Tjong

    2013-04-01

    Full Text Available The electrical responses of conductive graphite/epoxy composites subjected to an applied electric field were investigated. The results showed that reversible dielectric breakdown can easily occur inside the composites even under low macroscopic field strengths. This is attributed to the Zener effect induced by an intense internal electric field. The dielectric breakdown can yield new conducting paths in the graphite/epoxy composites, thereby contributing to overall electrical conduction process.

  11. Zener tunneling in conductive graphite/epoxy composites: Dielectric breakdown aspects

    OpenAIRE

    S. C. Tjong; L. X. He

    2013-01-01

    The electrical responses of conductive graphite/epoxy composites subjected to an applied electric field were investigated. The results showed that reversible dielectric breakdown can easily occur inside the composites even under low macroscopic field strengths. This is attributed to the Zener effect induced by an intense internal electric field. The dielectric breakdown can yield new conducting paths in the graphite/epoxy composites, thereby contributing to overall electrical conduction process.

  12. The effect of external factors on dielectric permittivity of Rochelle salt: humidity, annealing, stresses, electric field

    Directory of Open Access Journals (Sweden)

    A.G.Slivka

    2005-01-01

    Full Text Available The effect of external factors, such as dessicating/wetting, thermal annealing, uniaxial and hydrostatic pressure, on the dielectric permittivity of Rochelle salt crystals is investigated. The obtained results are compared with the available literature data and analyzed within the phenomenological Landau approach. A significant effect of the internal polar point defects in crystals and storage conditions on the dielectric permittivity is shown.

  13. AC conductivity and dielectric properties of Co-doped TiO 2

    Science.gov (United States)

    Okutan, Mustafa; Basaran, Engin; Bakan, Halil I.; Yakuphanoglu, Fahrettin

    2005-07-01

    The alternating current (AC) conductivity and dielectric properties of the Co-doped TiO 2 were investigated. The temperature dependence of AC conductivity and the parameter s, is reasonably well interpreted by the correlated barrier hopping (CBH) model. The activation energy ( E), and the density of states at Fermi level, N( EF) were determined. The dielectric constant decreases with frequency at low frequencies and increases at high frequencies.

  14. AC conductivity and dielectric properties of Co-doped TiO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Okutan, Mustafa [Department of Physics, Gebze Institute of Technology, P.O. Box 141, 41400 Gebze (Turkey)]. E-mail: mustafa@gyte.edu.tr; Basaran, Engin [Department of Physics, Gebze Institute of Technology, P.O. Box 141, 41400 Gebze (Turkey); Bakan, Halil I. [TUBITAK-MAM, Materials and Chemical Research Institute, 41470 Gebze (Turkey); Yakuphanoglu, Fahrettin [Department of Physics, Faculty of Arts and Science, Firat University, 23169 Elazig (Turkey)

    2005-07-15

    The alternating current (AC) conductivity and dielectric properties of the Co-doped TiO{sub 2} were investigated. The temperature dependence of AC conductivity and the parameter s, is reasonably well interpreted by the correlated barrier hopping (CBH) model. The activation energy (E), and the density of states at Fermi level, N(E {sub F}) were determined. The dielectric constant decreases with frequency at low frequencies and increases at high frequencies.

  15. Ionic Structure at Dielectric Interfaces

    Science.gov (United States)

    Jing, Yufei

    The behavior of ions in liquids confined between macromolecules determines the outcome of many nanoscale assembly processes in synthetic and biological materials such as colloidal dispersions, emulsions, hydrogels, DNA, cell membranes, and proteins. Theoretically, the macromolecule-liquid boundary is often modeled as a dielectric interface and an important quantity of interest is the ionic structure in a liquid confined between two such interfaces. The knowledge gleaned from the study of ionic structure in such models can be useful in several industrial applications, such as biosensors, lithium-ion batteries double-layer supercapacitors for energy storage and seawater desalination. Electrostatics plays a critical role in the development of such functional materials. Many of the functions of these materials, result from charge and composition heterogeneities. There are great challenges in solving electrostatics problems in heterogeneous media with arbitrary shapes because electrostatic interactions remains unknown but depend on the particular density of charge distributions. Charged molecules in heterogeneous media affect the media's dielectric response and hence the interaction between the charges is unknown since it depends on the media and on the geometrical properties of the interfaces. To determine the properties of heterogeneous systems including crucial effects neglected in classical mean field models such as the hard core of the ions, the dielectric mismatch and interfaces with arbitrary shapes. The effect of hard core interactions accounts properly for short range interactions and the effect of local dielectric heterogeneities in the presence of ions and/or charged molecules for long-range interactions are both analyzed via an energy variational principle that enables to update charges and the medium's response in the same simulation time step. In particular, we compute the ionic structure in a model system of electrolyte confined by two planar dielectric

  16. Ferroelectric dielectrics integrated on silicon

    CERN Document Server

    Defay, Emmanuel

    2013-01-01

    This book describes up-to-date technology applied to high-K materials for More Than Moore applications, i.e. microsystems applied to microelectronics core technologies.After detailing the basic thermodynamic theory applied to high-K dielectrics thin films including extrinsic effects, this book emphasizes the specificity of thin films. Deposition and patterning technologies are then presented. A whole chapter is dedicated to the major role played in the field by X-Ray Diffraction characterization, and other characterization techniques are also described such as Radio frequency characterizat

  17. Broadband cloaking using composite dielectrics

    Directory of Open Access Journals (Sweden)

    Ruey-Bing Hwang

    2011-03-01

    Full Text Available In this paper, we present a novel cloaking structure that is able to make a metallic block invisible in a metallic waveguide. Such a cloak is made up of a stack of commonly used dielectric slabs. We carry out the numerical simulation and observe the detour of the vector Poynting power through the cloak. Moreover, the experiment is conducted for measuring the scattering characteristics including the reflection and transmission coefficients. The great improvement in the transmission coefficient in a broad bandwidth after cloaking is demonstrated. Significantly, the theory of mode conversion is developed for explaining the cloaking phenomenon.

  18. Dielectric relaxation of NdMnO{sub 3} nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Saha, Sujoy, E-mail: sahasujoy3@gmail.com; Chanda, Sadhan; Dutta, Alo; Sinha, T.P.

    2013-11-15

    Graphical abstract: (a) TEM image of particle distribution of NMO. (b) HRTEM image of a single NMO particle under 4,000,000× magnification. (c) SAED pattern of a single NMO nanoparticle. - Highlights: • NdMnO{sub 3} nanoparticles are synthesized by sol–gel process. • TEM micrograph shows a granular characteristic with an average particle size of ∼50 nm. • HRTEM is consistent with the spacing between the (2 0 0) planes of the orthorhombic NdMnO{sub 3}. • Band gap is found to be 4.4 eV. • Cole–Cole model has been used to explain the dielectric relaxation in the material. • The activation energy of the material is found to be ∼0.43 eV. - Abstract: The neodymium manganate (NdMnO{sub 3}) nanoparticles are synthesized by the sol–gel process. The phase formation and particle size of the sample are determined by X-ray diffraction analysis and transmission electron microscopy. The band gap of the material is obtained by UV–visible absorption spectroscopy using Tauc relation. Dielectric properties of the sample have been investigated in the frequency range from 42 Hz to 1 MHz and in the temperature range from 303 K to 573 K. The dielectric relaxation peaks are observed in the frequency dependent dielectric loss spectra. The Cole–Cole model is used to explain the dielectric relaxation mechanism of the material. The complex impedance plane plot confirms the existence of both the grain and grain-boundary contribution to the relaxation. The temperature dependence of both grain and grain-boundary resistances follow the Arrhenius law with the activation energy of 0.427 and 0.431 eV respectively. The frequency-dependent conductivity spectra follow the power law.

  19. A simple method for reducing inevitable dielectric loss in high-permittivity dielectric elastomers

    DEFF Research Database (Denmark)

    Madsen, Frederikke Bahrt; Yu, Liyun; Mazurek, Piotr Stanislaw;

    2016-01-01

    Commercial viability of dielectric elastomers (DEs) is currently limited by a few obstacles, including high driving voltages (in the kV range). Driving voltage can be lowered by either decreasing the Young's modulus or increasing the dielectric permittivity of silicone elastomers, or a combinatio...... also decreased the dielectric losses of an elastomer containing dielectric permittivity-enhancing TiO2 fillers. Commercially available chloropropyl-functional silicone oil thus constitutes a facile method for improved silicone DEs, with very low dielectric losses....

  20. Pure Silica Zeolite Beta Membrane: A Potential Low Dielectric Constant Material For Microprocessor Application

    Science.gov (United States)

    Fong, Yeong Yin; Bhatia, Subhash

    The semiconductor industry needs low dielectric constant (low k-value) materials for more advance microprocessor and chips by reducing the size of the device features. In fabricating these contents, a new material with lower k-value than conventional silica (k = 3.9-4.2) is needed in order to improve the circuit performance. The choice of the inorganic zeolite membrane is an attractive option for low k material and suitable for microprocessor applications. A pure silica zeolite beta membrane was synthesized and coated on non-porous stainless steel support using insitu crystallization in the presence of tetraethylammonium hydroxide, TEA (OH), as structure directing agent, fumed silica, HF and deionized water at pH value of 9. The crystallization was carried out for the duration of 14 days under hydrothermal conditions at 130°C. The membrane was characterized by thermogravimetric analysis (TGA), nitrogen adsorption and Scanning Electron Microscope (SEM). SEM results show a highly crystalline; with a truncated square bipyramidal morphology of pure silica zeolite beta membrane strongly adhered on the non-porous stainless steel support. In the present work, the k-value of the membrane was measured as 2.64 which make it suitable for the microprocessor applications.