100 kV, 80 kJ low-induction capacitor module

International Nuclear Information System (INIS)

Andrezen, A.B.; Burtsev, V.A.; Vodovozov, V.M.; Drozdov, A.A.; Makeev, G.M.

1980-01-01

A low induction capacitor module has been developed to investigate THETA- and Z-pinch plasma. Energy output time of the module lays in the microsecond range. The 100 kV, 80 kJ module is based on low-induction castor capasitors. The module is equipped with two solid dielectric dischargers, the system of discharger ignition protection system and automatic system for charging of capacitors. The module discharge period T 0 =5.6 μs. The capacitor module has been used in investigations of electric explosions of Al plane foils in the pulverized quartz. The overvoltage Usub(max)/Usub(o) approximately equal to 10 has been received at the maximum intensity of the electric field Esub(max) approximately equal to 12 kV/sm [ru

Towards low-voltage organic thin film transistors (OTFTs with solution-processed high-k dielectric and interface engineering

Directory of Open Access Journals (Sweden)

Yaorong Su

2015-11-01

Full Text Available Although impressive progress has been made in improving the performance of organic thin film transistors (OTFTs, the high operation voltage resulting from the low gate capacitance density of traditional SiO2 remains a severe limitation that hinders OTFTs'development in practical applications. In this regard, developing new materials with high-k characteristics at low cost is of great scientific and technological importance in the area of both academia and industry. Here, we introduce a simple solution-based technique to fabricate high-k metal oxide dielectric system (ATO at low-temperature, which can be used effectively to realize low-voltage operation of OTFTs. On the other hand, it is well known that the properties of the dielectric/semiconductor and electrode/semiconductor interfaces are crucial in controlling the electrical properties of OTFTs. By optimizing the above two interfaces with octadecylphosphonic acid (ODPA self-assembled monolayer (SAM and properly modified low-cost Cu, obviously improved device performance is attained in our low-voltage OTFTs. Further more, organic electronic devices on flexible substrates have attracted much attention due to their low-cost, rollability, large-area processability, and so on. Basing on the above results, outstanding electrical performance is achieved in flexible devices. Our studies demonstrate an effective way to realize low-voltage, high-performance OTFTs at low-cost.

Mechanical characterization of zeolite low dielectric constant thin films by nanoindentation

International Nuclear Information System (INIS)

Johnson, Mark; Li Zijian; Wang Junlan; Ya, Yushan

2007-01-01

With semiconductor technologies continuously pushing the miniaturization limits, there is a growing interest in developing novel low dielectric constant materials to replace the traditional dense SiO 2 insulators. In order to survive the multi-level integration process and provide reliable material and structure for the desired integrated circuits (IC) functions, the new low-k materials have to be mechanically strong and stable. Therefore the material selection and mechanical characterization are vital for the successful development of next generation low-k dielectrics. A new class of low-k materials, nanoporous pure-silica zeolite, is prepared in thin films using IC compatible spin coating process and characterized using depth sensing nanoindentation technique. The elastic modulus of the zeolite thin films is found to be significantly higher than that of other low-k materials with similar porosity and dielectric constants. Correlations between the mechanical, microstructural and electrical properties of the thin films are discussed in detail

INVESTIGATION OF THE FREQUENCY-TEMPERATURE RELATIONSHIP OF THE DIELECTRIC PERMITTIVITY OF THE PZT PIEZOCERAMICS IN THE LOW FREQUENCY RANGE

Directory of Open Access Journals (Sweden)

A. I. ZOLOTAREVSKIY

2018-05-01

Full Text Available Purpose. To investigate the frequency-temperature relationship of the dielectric permittivity of PZT piezoceramics in the low frequency range. Methodology. To obtain the frequency-temperature relationship of the dielectric permittivity of the PZT piezoceramics, a technique was used to determine the capacitance of the capacitor, between which plates the sample was placed. The value of the dielectric permittivity of the sample was calculated from the capacitor capacitance obtained. Findings. The frequency-temperature relationship of the dielectric permittivity of the PZT piezoceramics in the low frequency range has been obtained by the authors. The dielectric permittivity is not practically related to the frequency of the alternating voltage at a low temperature, with increasing in temperature its value increases and frequency relationship is observed. The temperature relationship of the dielectric permittivity of the PZT piezoceramics is satisfactorily described by the exponential functional dependence in the low-temperature range. The activation energy of the PZT piezoceramics polarization is determined from the graph of the dependence of the logarithm of the dielectric permittivity upon the inverse temperature. Different values of the activation energy for the two temperature regions prove on the existence of different mechanisms of the PZT piezoceramics polarization in the temperature range being investigated. Originality. The authors investigated the frequency-temperature relationship of the dielectric permittivity of the PZT piezoceramics in the low-frequency range. It is established that the temperature relationship of the dielectric permittivity of the PZT piezoceramics is satisfactorily described by an exponential functional relationship in the lowtemperature range. The activation energy of polarization is determined for two temperature sections. Practical value. The research results can be used to study the mechanism of polarization of

Investigation of 6T SRAM memory circuit using high-k dielectrics based nano scale junctionless transistor

Science.gov (United States)

Charles Pravin, J.; Nirmal, D.; Prajoon, P.; Mohan Kumar, N.; Ajayan, J.

2017-04-01

In this paper the Dual Metal Surround Gate Junctionless Transistor (DMSGJLT) has been implemented with various high-k dielectric. The leakage current in the device is analysed in detail by obtaining the band structure for different high-k dielectric material. It is noticed that with increasing dielectric constant the device provides more resistance for the direct tunnelling of electron in off state. The gate oxide capacitance also shows 0.1 μF improvement with Hafnium Oxide (HfO2) than Silicon Oxide (SiO2). This paved the way for a better memory application when high-k dielectric is used. The Six Transistor (6T) Static Random Access Memory (SRAM) circuit implemented shows 41.4% improvement in read noise margin for HfO2 than SiO2. It also shows 37.49% improvement in write noise margin and 30.16% improvement in hold noise margin for HfO2 than SiO2.

Low dielectric constant-based organic field-effect transistors and metal-insulator-semiconductor capacitors

Science.gov (United States)

Ukah, Ndubuisi Benjamin

This thesis describes a study of PFB and pentacene-based organic field-effect transistors (OFET) and metal-insulator-semiconductor (MIS) capacitors with low dielectric constant (k) poly(methyl methacrylate) (PMMA), poly(4-vinyl phenol) (PVP) and cross-linked PVP (c-PVP) gate dielectrics. A physical method -- matrix assisted pulsed laser evaporation (MAPLE) -- of fabricating all-polymer field-effect transistors and MIS capacitors that circumvents inherent polymer dissolution and solvent-selectivity problems, is demonstrated. Pentacene-based OFETs incorporating PMMA and PVP gate dielectrics usually have high operating voltages related to the thickness of the dielectric layer. Reduced PMMA layer thickness (≤ 70 nm) was obtained by dissolving the PMMA in propylene carbonate (PC). The resulting pentacene-based transistors exhibited very low operating voltage (below -3 V), minimal hysteresis in their transfer characteristics, and decent electrical performance. Also low voltage (within -2 V) operation using thin (≤ 80 nm) low-k and hydrophilic PVP and c-PVP dielectric layers obtained via dissolution in high dipole moment and high-k solvents -- PC and dimethyl sulfoxide (DMSO), is demonstrated to be a robust means of achieving improved electrical characteristics and high operational stability in OFETs incorporating PVP and c-PVP dielectrics.

Mechanical reliability of porous low-k dielectrics for advanced interconnect: Study of the instability mechanisms in porous low-k dielectrics and their mediation through inert plasma induced re-polymerization of the backbone structure

Science.gov (United States)

Sa, Yoonki

Continuous scaling down of critical dimensions in interconnect structures requires the use of ultralow dielectric constant (k) films as interlayer dielectrics to reduce resistance-capacitance delays. Porous carbon-doped silicon oxide (p-SiCOH) dielectrics have been the leading approach to produce these ultralow-k materials. However, embedding of porosity into dielectric layer necessarily decreases the mechanical reliability and increases its susceptibility to adsorption of potentially deleterious chemical species during device fabrication process. Among those, exposure of porous-SiCOH low-k (PLK) dielectrics to oxidizing plasma environment causes the increase in dielectric constant and their vulnerability to mechanical instability of PLKs due to the loss of methyl species and increase in moisture uptake. These changes in PLK properties and physical stability have been persisting challenges for next-generation interconnects because they are the sources of failure in interconnect integration as well as functional and physical failures appearing later in IC device manufacturing. It is therefore essential to study the fundamentals of the interactions on p-SiCOH matrix induced by plasma exposure and find an effective and easy-to-implement way to reverse such changes by repairing damage in PLK structure. From these perspectives, the present dissertation proposes 1) a fundamental understanding of structural transformation occurring during oxidative plasma exposure in PLK matrix structure and 2) its restoration by using silylating treatment, soft x-ray and inert Ar-plasma radiation, respectively. Equally important, 3) as an alternative way of increasing the thermo-mechanical reliability, PLK dielectric film with an intrinsically robust structure by controlling pore morphology is fabricated and investigated. Based on the investigations, stability of PLK films studied by time-dependent ball indentation tester under the elevated temperature, variation in film thickness and

Effect of ultraviolet curing wavelength on low-k dielectric material properties and plasma damage resistance

Energy Technology Data Exchange (ETDEWEB)

Marsik, Premysl, E-mail: marsik@physics.muni.c [UFKL, Masaryk University, Kotlarska 2, 61137 Brno (Czech Republic); IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Urbanowicz, Adam M. [UFKL, Masaryk University, Kotlarska 2, 61137 Brno (Czech Republic); Verdonck, Patrick [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); De Roest, David; Sprey, Hessel [ASM Belgium, Kapeldreef 75, 3001 Leuven (Belgium); Baklanov, Mikhail R. [IMEC, Kapeldreef 75, 3001 Leuven (Belgium)

2011-03-31

A set of SiCOH low dielectric constant films (low-k) has been deposited by plasma enhanced chemical vapor deposition using variable flow rates of the porogen (sacrificial phase) and matrix precursors. During the deposition, two different substrate temperatures and radio frequency power settings were applied. Next, the deposited films were cured by the UV assisted annealing (UV-cure) using two industrial UV light sources: a monochromatic UV source with intensity maximum at {lambda} = 172 nm (lamp A) and a broadband UV source with intensity spectrum distributed below 200 nm (lamp B). This set of various low-k films has been additionally exposed to NH{sub 3} plasma (used for the CuO{sub x} reduction during Cu/low-k integration) in order to evaluate the effect of the film preparation conditions on the plasma damage resistance of low-k material. Results show that the choice of the UV-curing light source has significant impact on the chemical composition of the low-k material and modifies the porogen removal efficiency and subsequently the material porosity. The 172 nm photons from lamp A induce greater changes to most of the evaluated properties, particularly causing undesired removal of Si-CH{sub 3} groups and their replacement with Si-H. The softer broadband radiation from lamp B improves the porogen removal efficiency, leaving less porogen residues detected by spectroscopic ellipsometry in UV range. Furthermore, it was found that the degree of bulk hydrophilization (plasma damage) after NH{sub 3} plasma exposure is driven mainly by the film porosity.

Brillouin light scattering studies of the mechanical properties of ultrathin low-k dielectric films

Science.gov (United States)

Link, A.; Sooryakumar, R.; Bandhu, R. S.; Antonelli, G. A.

2006-07-01

In an effort to reduce RC time delays that accompany decreasing feature sizes, low-k dielectric films are rapidly emerging as potential replacements for silicon dioxide (SiO2) at the interconnect level in integrated circuits. The main challenge in low-k materials is their substantially weaker mechanical properties that accompany the increasing pore volume content needed to reduce k. We show that Brillouin light scattering is an excellent nondestructive technique to monitor and characterize the mechanical properties of these porous films at thicknesses well below 200nm that are pertinent to present applications. Observation of longitudinal and transverse standing wave acoustic resonances and the dispersion that accompany their transformation into traveling waves with finite in-plane wave vectors provides for a direct measure of the principal elastic constants that completely characterize the mechanical properties of these ultrathin films. The mode amplitudes of the standing waves, their variation within the film, and the calculated Brillouin intensities account for most aspects of the spectra. We further show that the values obtained by this method agree well with other experimental techniques such as nanoindentation and picosecond laser ultrasonics.

Extraction and dielectric properties of curcuminoid films grown on Si substrate for high-k dielectric applications

Energy Technology Data Exchange (ETDEWEB)

Dakhel, A.A.; Jasim, Khalil E. [Department of Physics, College of Science, University of Bahrain, P.O. Box 32038 (Bahrain); Cassidy, S. [Department of Basic Medical Sciences, Royal College of Surgeons in Ireland, Medical University of Bahrain, P.O. Box 15503 (Bahrain); Henari, F.Z., E-mail: fzhenari@rcsi-mub.com [Department of Basic Medical Sciences, Royal College of Surgeons in Ireland, Medical University of Bahrain, P.O. Box 15503 (Bahrain)

2013-09-20

Highlights: • The unknown insulating properties of curcuminoid extract are systematically studied. • Optical study gives a bandgap of 3.15 eV and a refractive index of 1.92 at 505 nm. • Turmeric is a high-k environmental friendly material for use in microelectronics. • Curcuminoid extract can be used as insulator of MIS devices with ε{sup ′}{sub ∞}≈54.2. -- Abstract: Curcuminoids were extracted from turmeric powder and evaporated in vacuum to prepare thin films on p-Si and glass substrates for dielectric and optical investigations. The optical absorption spectrum of the prepared amorphous film was not identical to that of the molecular one, which was identified by a strong wide absorption band in between ∼220 and 540 nm. The onset energy of the optical absorption of the film was calculated by using Hamberg et al. method. The dielectric properties of this material were systematically studied for future eco friendly applications in metal–insulator–semiconductor MIS field of applications. The complex dielectric properties were studied in the frequency range of 1–1000 kHz and was analysed in-terms of dielectric impedance Z{sup *}(ω) and modulus M{sup *}(ω). Generally, the curcuminoid complex can be considered as a high-k material and can be used in the environmental friendly production of microelectronic devices.

Extraction and dielectric properties of curcuminoid films grown on Si substrate for high-k dielectric applications

International Nuclear Information System (INIS)

Dakhel, A.A.; Jasim, Khalil E.; Cassidy, S.; Henari, F.Z.

2013-01-01

Highlights: • The unknown insulating properties of curcuminoid extract are systematically studied. • Optical study gives a bandgap of 3.15 eV and a refractive index of 1.92 at 505 nm. • Turmeric is a high-k environmental friendly material for use in microelectronics. • Curcuminoid extract can be used as insulator of MIS devices with ε ′ ∞ ≈54.2. -- Abstract: Curcuminoids were extracted from turmeric powder and evaporated in vacuum to prepare thin films on p-Si and glass substrates for dielectric and optical investigations. The optical absorption spectrum of the prepared amorphous film was not identical to that of the molecular one, which was identified by a strong wide absorption band in between ∼220 and 540 nm. The onset energy of the optical absorption of the film was calculated by using Hamberg et al. method. The dielectric properties of this material were systematically studied for future eco friendly applications in metal–insulator–semiconductor MIS field of applications. The complex dielectric properties were studied in the frequency range of 1–1000 kHz and was analysed in-terms of dielectric impedance Z * (ω) and modulus M * (ω). Generally, the curcuminoid complex can be considered as a high-k material and can be used in the environmental friendly production of microelectronic devices

Perovskite oxynitride LaTiO{sub x}N{sub y} thin films: Dielectric characterization in low and high frequencies

Energy Technology Data Exchange (ETDEWEB)

Lu, Y.; Ziani, A. [Institut d' Electronique et de Telecommunications de Rennes (IETR) UMR-CNRS 6164, groupe ' Antennes et Hyperfrequences' , University of Rennes 1, UEB, IUT Saint Brieuc, 18 rue Henri Wallon, 22004 Saint Brieuc cedex (France); Le Paven-Thivet, C., E-mail: claire.lepaven@univ-rennes1.fr [Institut d' Electronique et de Telecommunications de Rennes (IETR) UMR-CNRS 6164, groupe ' Antennes et Hyperfrequences' , University of Rennes 1, UEB, IUT Saint Brieuc, 18 rue Henri Wallon, 22004 Saint Brieuc cedex (France); Benzerga, R.; Le Gendre, L. [Institut d' Electronique et de Telecommunications de Rennes (IETR) UMR-CNRS 6164, groupe ' Antennes et Hyperfrequences' , University of Rennes 1, UEB, IUT Saint Brieuc, 18 rue Henri Wallon, 22004 Saint Brieuc cedex (France); Fasquelle, D. [Laboratoire d' Etude des Materiaux et des Composants pour l' Electronique (LEMCEL) UPRES-EA 2601, University of Littoral-Cote d' Opale, 50 rue Ferdinand Buisson, F-62228 Calais cedex (France); Kassem, H. [Laboratoire de l' Integration du Materiau au Systeme(IMS) UMR-CNRS 5218, groupe Materiaux, University of Bordeaux 1, 16 avenue Pey-Berland, 33607 Pessac (France); and others

2011-11-01

Lanthanum titanium oxynitride (LaTiO{sub x}N{sub y}) thin films are studied with respect to their dielectric properties in low and high frequencies. Thin films are deposited by radio frequency magnetron sputtering on different substrates. Effects of nitrogen content and crystalline quality on dielectric properties are investigated. In low-frequency range, textured LaTiO{sub x}N{sub y} thin films deposited on conductive single crystal Nb-STO show a dielectric constant {epsilon} Prime Almost-Equal-To 140 with low losses tan{delta} = 0.012 at 100 kHz. For the LaTiO{sub x}N{sub y} polycrystalline films deposited on conductive silicon substrates with platinum (Pt/Ti/SiO{sub 2}/Si), the tunability reached up to 57% for a weak electric field of 50 kV/cm. In high-frequency range, epitaxial LaTiO{sub x}N{sub y} films deposited on MgO substrate present a high dielectric constant with low losses ({epsilon} Prime Almost-Equal-To 170, tan{delta} = 0.011, 12 GHz).

High performance solution processed zirconium oxide gate dielectric appropriate for low temperature device application

Energy Technology Data Exchange (ETDEWEB)

Hasan, Musarrat; Nguyen, Manh-Cuong; Kim, Hyojin; You, Seung-Won; Jeon, Yoon-Seok; Tong, Duc-Tai; Lee, Dong-Hwi; Jeong, Jae Kyeong; Choi, Rino, E-mail: rino.choi@inha.ac.kr

2015-08-31

This paper reports a solution processed electrical device with zirconium oxide gate dielectric that was fabricated at a low enough temperature appropriate for flexible electronics. Both inorganic dielectric and channel materials were synthesized in the same organic solvent. The dielectric constant achieved was 13 at 250 °C with a reasonably low leakage current. The bottom gate transistor devices showed the highest mobility of 75 cm{sup 2}/V s. The device is operated at low voltage with high-k dielectric with excellent transconductance and low threshold voltage. Overall, the results highlight the potential of low temperature solution based deposition in fabricating more complicated circuits for a range of applications. - Highlights: • We develop a low temperature inorganic dielectric deposition process. • We fabricate oxide semiconductor channel devices using all-solution processes. • Same solvent is used for dielectric and oxide semiconductor deposition.

Investigation of NOx Reduction by Low Temperature Oxidation Using Ozone Produced by Dielectric Barrier Discharge

DEFF Research Database (Denmark)

Stamate, Eugen; Irimiea, Cornelia; Salewski, Mirko

2013-01-01

NOx reduction by low temperature oxidation using ozone produced by a dielectric barrier discharge generator is investigated for different process parameters in a 6m long reactor in serpentine arrangement using synthetic dry flue gas with NOx levels below 500 ppm, flows up to 50 slm and temperatures...

Preliminary investigation of polystyrene/MoS{sub 2}-Oleylamine polymer composite for potential application as low-dielectric material in microelectronics

Energy Technology Data Exchange (ETDEWEB)

Landi, Giovanni, E-mail: glandi@unisa.it [Institute for Polymers, Composites and Biomaterials (IPCB-CNR), P. Enrico Fermi 1, 80055 Portici (Italy); Department of Industrial Engineering, University of Salerno, Via G. Paolo II 132, 84084 Fisciano (Italy); Altavilla, Claudia; Iannace, Salvatore; Sorrentino, Andrea, E-mail: andrea.sorrentino@cnr.it [Institute for Polymers, Composites and Biomaterials (IPCB-CNR), P. Enrico Fermi 1, 80055 Portici (Italy); Ciambelli, Paolo [Department of Industrial Engineering, University of Salerno, Via G. Paolo II 132, 84084 Fisciano (Italy); Centre NANO-MATES, University of Salerno, Fisciano, Via G. Paolo II 132, 84084 Fisciano (Italy); Neitzert, Heinrich C. [Department of Industrial Engineering, University of Salerno, Via G. Paolo II 132, 84084 Fisciano (Italy)

2015-12-17

Insulating materials play a vital role in the design and performance of electrical systems for both steady and transient state conditions. Among the other properties, also in this field, polymer nanocomposites promise to offer exciting improvements. Many studies in the last decade has witnessed significant developments in the area of nano-dielectric materials and significant effects of nano-scale fillers on electric, thermal and mechanical properties of polymeric materials have been observed. However, the developments of new and advanced materials to be used the miniaturization of electronic devices fabrication require extensive studies on electrical insulation characteristics of these materials before they can be used in commercial systems. In this work, Polystyrene (PS) composites were prepared by the blend solution method using MoS{sub 2}@Oleylamine nanosheets as filler. The dielectric properties of the resulting comoposite have been investigated at 300K and in the frequency range between 1000 Hz and 1 MHz. The addition of the MoS{sub 2}@Oleylamine nanosheets leads to a decreasing of the relative dielectric constant and of the electrical conductivity measured in the voltage range between ±500V. Thanks to a possibility to tune the electrical permittivity with the control of MoS{sub 2} concentration, these materials could be used as a low-dielectric material in the microelectronics applications.

Polaron-electron assisted giant dielectric dispersion in SrZrO{sub 3} high-k dielectric

Energy Technology Data Exchange (ETDEWEB)

Borkar, Hitesh; Barvat, Arun; Pal, Prabir; Kumar, Ashok, E-mail: ashok553@nplindia.org [CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-National Physical Laboratory (CSIR-NPL) Campus, Dr. K S Krishnan Marg, New Delhi 110012 (India); Shukla, A. K. [CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India); Pulikkotil, J. J. [CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-National Physical Laboratory (CSIR-NPL) Campus, Dr. K S Krishnan Marg, New Delhi 110012 (India); Computation and Networking Facility, CSIR-National Physical Laboratory, New Delhi 110012 (India)

2016-06-07

The SrZrO{sub 3} is a well known high-k dielectric constant (∼22) and high optical bandgap (∼5.8 eV) material and one of the potential candidates for future generation nanoelectronic logic elements (8 nm node technology) beyond silicon. Its dielectric behavior is fairly robust and frequency independent till 470 K; however, it suffers a strong small-polaron based electronic phase transition (T{sub e}) linking 650 to 750 K. The impedance spectroscopy measurements revealed the presence of conducting grains and grain boundaries at elevated temperature which provide energetic mobile charge carriers with activation energy in the range of 0.7 to 1.2 eV supporting the oxygen ions and proton conduction. X-ray photoemission spectroscopy measurements suggest the presence of weak non-stoichiometric O{sup 2−} anions and hydroxyl species bound to different sites at the surface and bulk. These thermally activated charge carriers at elevated temperature significantly contribute to the polaronic based dielectric anomaly and conductivity. Our dielectric anomaly supports pseudo phase transition due to high degree of change in ZrO{sub 6} octahedral angle in the temperature range of 650–750 K, where electron density and phonon vibration affect the dielectric and conductivity properties.

High-k 3D-barium titanate foam/phenolphthalein poly(ether sulfone)/cyanate ester composites with frequency-stable dielectric properties and extremely low dielectric loss under reduced concentration of ceramics

Science.gov (United States)

Zheng, Longhui; Yuan, Li; Guan, Qingbao; Liang, Guozheng; Gu, Aijuan

2018-01-01

Higher dielectric constant, lower dielectric loss and better frequency stability have been the developing trends for high dielectric constant (high-k) materials. Herein, new composites have been developed through building unique structure by using hyperbranched polysiloxane modified 3D-barium titanate foam (BTF) (BTF@HSi) as the functional fillers and phenolphthalein poly(ether sulfone) (cPES)/cyanate ester (CE) blend as the resin matrix. For BTF@HSi/cPES/CE composite with 34.1 vol% BTF, its dielectric constant at 100 Hz is as high as 162 and dielectric loss is only 0.007; moreover, the dielectric properties of BTF@HSi/cPES/CE composites exhibit excellent frequency stability. To reveal the mechanism behind these attractive performances of BTF@HSi/cPES/CE composites, three kinds of composites (BTF/CE, BTF/cPES/CE, BTF@HSi/CE) were prepared, their structure and integrated performances were intensively investigated and compared with those of BTF@HSi/cPES/CE composites. Results show that the surface modification of BTF is good for preparing composites with improved thermal stability; while introducing flexible cPES to CE is beneficial to fabricate composites with good quality through effectively blocking cracks caused by the stress concentration, and then endowing the composites with good dielectric properties at reduced concentration of ceramics.

Characterization of spin-on-glass very-low-k polymethylsiloxane with copper metallization

International Nuclear Information System (INIS)

Aw, K.C.; Salim, N.T.; Gao, W.; Li, Z.

2006-01-01

Cu diffusion is one major problem that inhibits low-k dielectric to be integrated with existing fabrication technology effectively. This paper demonstrates the effects of surface modification towards polymethylsiloxane low-k dielectric (LKD 5109) from JSR Micro using gas mixture of H 2 + N 2 plasma in order to improve Cu diffusion barrier. C-V plots indirectly indicated that plasma treatment reduces Cu + ions penetration during Cu deposition using magnetron sputtering. XPS confirmed that short duration (10 to 30 s) of H 2 + N 2 plasma treatment could cause surface densification of LKD 5109 low-k thin film through formation of N-C bonds. However, the negative effect of plasma treatment is the increment of dielectric constant (k) due to possible surface densification

Design and testing of 45 kV, 50 kHz pulse power supply for dielectric barrier discharges

Science.gov (United States)

Sharma, Surender Kumar; Shyam, Anurag

2016-10-01

The design, construction, and testing of high frequency, high voltage pulse power supply are reported. The purpose of the power supply is to generate dielectric barrier discharges for industrial applications. The power supply is compact and has the advantage of low cost, over current protection, and convenient control for voltage and frequency selection. The power supply can generate high voltage pulses of up to 45 kV at the repetitive frequency range of 1 kHz-50 kHz with 1.2 kW input power. The output current of the power supply is limited to 500 mA. The pulse rise time and fall time are less than 2 μs and the pulse width is 2 μs. The power supply is short circuit proof and can withstand variable plasma load conditions. The power supply mainly consists of a half bridge series resonant converter to charge an intermediate capacitor, which discharges through a step-up transformer at high frequency to generate high voltage pulses. Semiconductor switches and amorphous cores are used for power modulation at higher frequencies. The power supply is tested with quartz tube dielectric barrier discharge load and worked stably. The design details and the performance of the power supply on no load and dielectric barrier discharge load are presented.

Low-voltage bendable pentacene thin-film transistor with stainless steel substrate and polystyrene-coated hafnium silicate dielectric.

Science.gov (United States)

Yun, Dong-Jin; Lee, Seunghyup; Yong, Kijung; Rhee, Shi-Woo

2012-04-01

The hafnium silicate and aluminum oxide high-k dielectrics were deposited on stainless steel substrate using atomic layer deposition process and octadecyltrichlorosilane (OTS) and polystyrene (PS) were treated improve crystallinity of pentacene grown on them. Besides, the effects of the pentacene deposition condition on the morphologies, crystallinities and electrical properties of pentacene were characterized. Therefore, the surface treatment condition on dielectric and pentacene deposition conditions were optimized. The pentacene grown on polystyrene coated high-k dielectric at low deposition rate and temperature (0.2-0.3 Å/s and R.T.) showed the largest grain size (0.8-1.0 μm) and highest crystallinity among pentacenes deposited various deposition conditions, and the pentacene TFT with polystyrene coated high-k dielectric showed excellent device-performance. To decrease threshold voltage of pentacene TFT, the polystyrene-thickness on high-k dielectric was controlled using different concentration of polystyrene solution. As the polystyrene-thickness on hafnium silicate decreases, the dielectric constant of polystyrene/hafnium silicate increases, while the crystallinity of pentacene grown on polystyrene/hafnium silicate did not change. Using low-thickness polystyrene coated hafnium silicate dielectric, the high-performance and low voltage operating (pentacene thin film transistor (μ: ~2 cm(2)/(V s), on/off ratio, >1 × 10(4)) and complementary inverter (DC gains, ~20) could be fabricated.

Integration of atomic layer deposited high-k dielectrics on GaSb via hydrogen plasma exposure

Directory of Open Access Journals (Sweden)

Laura B. Ruppalt

2014-12-01

Full Text Available In this letter we report the efficacy of a hydrogen plasma pretreatment for integrating atomic layer deposited (ALD high-k dielectric stacks with device-quality p-type GaSb(001 epitaxial layers. Molecular beam eptiaxy-grown GaSb surfaces were subjected to a 30 minute H2/Ar plasma treatment and subsequently removed to air. High-k HfO2 and Al2O3/HfO2 bilayer insulating films were then deposited via ALD and samples were processed into standard metal-oxide-semiconductor (MOS capacitors. The quality of the semiconductor/dielectric interface was probed by current-voltage and variable-frequency admittance measurements. Measurement results indicate that the H2-plamsa pretreatment leads to a low density of interface states nearly independent of the deposited dielectric material, suggesting that pre-deposition H2-plasma exposure, coupled with ALD of high-k dielectrics, may provide an effective means for achieving high-quality GaSb MOS structures for advanced Sb-based digital and analog electronics.

High-k dielectrics as bioelectronic interface for field-effect transistors

Energy Technology Data Exchange (ETDEWEB)

Borstlap, D

2007-03-15

Ion-sensitive field-effect transistors (ISFETs) are employed as bioelectronic sensors for the cell-transistor coupling and for the detection of DNA sequences. For these applications, thermally grown SiO{sub 2} films are used as standard gate dielectric. In the first part of this dissertation, the suitability of high-k dielectrics was studied to increase the gate capacitance and hence the signal-to-noise ratio of bioelectronic ISFETs: Upon culturing primary rat neurons on the corresponding high-k dielectrics, Al{sub 2}O{sub 3}, yttria stabilised zirkonia (YSZ), DyScO{sub 3}, CeO{sub 2}, LaAlO{sub 3}, GdScO{sub 3} and LaScO{sub 3} proved to be biocompatible substrates. Comprehensive electrical and electrochemical current-voltage measurements and capacitance-voltage measurements were performed for the determination of the dielectric properties of the high-k dielectrics. In the second part of the dissertation, standard SiO{sub 2} ISFETs with lower input capacitance and high-k dielectric Al{sub 2}O{sub 3}, YSZ und DyScO{sub 3} ISFETs were comprehensively characterised and compared with each other regarding their signal-to-noise ratio, their ion sensitivity and their drift behaviour. The ion sensitivity measurements showed that the YSZ ISFETs were considerably more sensitive to K{sup +} and Na{sup +} ions than the SiO{sub 2}, Al{sub 2}O{sub 3} und DyScO{sub 3} ISFETs. In the final third part of the dissertation, bioelectronic experiments were performed with the high-k ISFETs. The shape of the signals, which were measured from HL-1 cells with YSZ ISFETs, differed considerably from the corresponding measurements with SiO{sub 2} and DyScO{sub 3} ISFETs: After the onset of the K{sup +} current, the action potentials measured with YSZ ISFETs showed a strong drift in the direction opposite to the K{sup +} current signal. First coupling experiments between HEK 293 cells, which were transfected with a K{sup +} ion channel, and YSZ ISFETs affirmed the assumption from the HL-1

Investigation of the dielectric properties of shale

International Nuclear Information System (INIS)

Martemyanov, Sergey M.

2011-01-01

The article is dedicated to investigation of the dielectric properties of oil shale. Investigations for samples prepared from shale mined at the deposit in Jilin Province in China were done. The temperature and frequency dependences of rock characteristics needed to calculate the processes of their thermal processing are investigated. Frequency dependences for the relative dielectric constant and dissipation factor of rock in the frequency range from 0,1 Hz to 1 MHz are investigated. The temperature dependences for rock resistance, dielectric capacitance and dissipation factor in the temperature range from 20 to 600°C are studied. Key words: shale, dielectric properties, relative dielectric constant, dissipation factor, temperature dependence, frequency dependence

Dielectric properties investigation of Cu2O/ZnO heterojunction thin films by electrodeposition

International Nuclear Information System (INIS)

Li, Qiang; Xu, Mengmeng; Fan, Huiqing; Wang, Hairong; Peng, Biaolin; Long, Changbai; Zhai, Yuchun

2013-01-01

Highlights: ► Bottom-up self-assembly Cu 2 O/ZnO heterojunction was fabricated by electrochemical deposition on indium tin oxide (ITO) flexible substrate (polyethylene terephthalate-PET). ► The dielectric response of Cu 2 O/ZnO heterojunction thin films had been investigated. ► The universal dielectric response was used to investigate the hopping behavior in Cu 2 O/ZnO heterojunction. -- Abstract: Structures and morphologies of the Cu 2 O/ZnO heterojunction electrodeposited on indium tin oxide (ITO) flexible substrate (polyethylene terephthalate-PET) were investigated by X-ray diffraction (XRD), scanning electronic microscopy (SEM), high resolution transmission electron microscopy (HRTEM), respectively. The dielectric response of bottom-up self-assembly Cu 2 O/ZnO heterojunction was investigated. The low frequency dielectric dispersion (LFDD) was observed. The universal dielectric response (UDR) was used to investigate the frequency dependence of dielectric response for Cu 2 O/ZnO heterojunction, which was attributed to the long range and the short range hopping charge carriers at the low frequency and the high frequency region, respectively

Thermal dielectric function

International Nuclear Information System (INIS)

Moneta, M.

1999-01-01

Thermal dielectric functions ε(k,ω) for homogeneous electron gas were determined and discussed. The ground state of the gas is described by the Fermi-Dirac momentum distribution. The low and high temperature limits of ε(k,ω) were related to the Lindhard dielectric function and to ε(k, omega) derived for Boltzmann and for classical momentum distributions, respectively. (author)

Investigation of Vacuum Insulator Surface Dielectric Strength with Nanosecond Pulses

International Nuclear Information System (INIS)

Nunnally, W.C.; Krogh, M.; Williams, C.; Trimble, D.; Sampayan, S.; Caporaso, G.

2003-01-01

The maximum vacuum insulator surface dielectric strength determines the acceleration electric field gradient possible in a short pulse accelerator. Previous work has indicated that higher electric field strengths along the insulator-vacuum interface might be obtained as the pulse duration is decreased. In this work, a 250 kV, single ns wide impulse source was applied to small diameter, segmented insulators samples in a vacuum to evaluate the multi-layer surface dielectric strength of the sample construction. Resonances in the low inductance test geometry were used to obtain unipolar, pulsed electric fields in excess of 100 MV/m on the insulator surface. The sample construction, experimental arrangement and experimental results are presented for the initial data in this work. Modeling of the multi-layer structure is discussed and methods of improving insulator surface dielectric strength in a vacuum are proposed

The effect of water uptake on the mechanical properties of low-k organosilica glass

Science.gov (United States)

X. Guo; J.E. Jakes; M.T. Nichols; S. Banna; Y. Nishi; J.L. Shohet

2013-01-01

Water uptake in porous low-k dielectrics has become a significant challenge for both back-end-of line integration and circuit reliability. The influence of absorbed water on the mechanical properties of plasma-enhanced chemical-vapor-deposited organosilicate glasses (SiCOH) was investigated with nanoindentation. The roles of physisorbed (α-...

Low-Temperature Solution-Processed Gate Dielectrics for High-Performance Organic Thin Film Transistors

Directory of Open Access Journals (Sweden)

Jaekyun Kim

2015-10-01

Full Text Available A low-temperature solution-processed high-k gate dielectric layer for use in a high-performance solution-processed semiconducting polymer organic thin-film transistor (OTFT was demonstrated. Photochemical activation of sol-gel-derived AlOx films under 150 °C permitted the formation of a dense film with low leakage and relatively high dielectric-permittivity characteristics, which are almost comparable to the results yielded by the conventionally used vacuum deposition and high temperature annealing method. Octadecylphosphonic acid (ODPA self-assembled monolayer (SAM treatment of the AlOx was employed in order to realize high-performance (>0.4 cm2/Vs saturation mobility and low-operation-voltage (<5 V diketopyrrolopyrrole (DPP-based OTFTs on an ultra-thin polyimide film (3-μm thick. Thus, low-temperature photochemically-annealed solution-processed AlOx film with SAM layer is an attractive candidate as a dielectric-layer for use in high-performance organic TFTs operated at low voltages.

Microwave dielectric study of polar liquids at 298 K

Science.gov (United States)

Maharolkar, Aruna P.; Murugkar, A.; Khirade, P. W.

2018-05-01

Present paper deals with study of microwave dielectric properties like dielectric constant, viscosity, density and refractive index for the binary mixtures of Dimethylsulphoxide (DMSO) and Methanol over the entire concentration range were measured at 298K. The experimental data further used to determine the excess properties viz. excess static dielectric constant, excess molar volume, excess viscosity& derived properties viz. molar refraction&Bruggman factor. The values of excess properties further fitted with Redlich-Kister (R-K Fit) equation to calculate the binary coefficients and standard deviation. The resulting excess parameters are used to indicate the presence of intermolecular interactions and strength of intermolecular interactions between the molecules in the binary mixtures. Excess parameters indicate structure breaking factor in the mixture predominates in the system.

Poly(methyl methacrylate) as a self-assembled gate dielectric for graphene field-effect transistors

Energy Technology Data Exchange (ETDEWEB)

Sanne, A.; Movva, H. C. P.; Kang, S.; McClellan, C.; Corbet, C. M.; Banerjee, S. K. [Microelectronics Research Center, University of Texas, Austin, Texas 78758 (United States)

2014-02-24

We investigate poly(methyl methacrylate) (PMMA) as a low thermal budget organic gate dielectric for graphene field effect-transistors (GFETs) based on a simple process flow. We show that high temperature baking steps above the glass transition temperature (∼130 °C) can leave a self-assembled, thin PMMA film on graphene, where we get a gate dielectric almost for “free” without additional atomic layer deposition type steps. Electrical characterization of GFETs with PMMA as a gate dielectric yields a dielectric constant of k = 3.0. GFETs with thinner PMMA dielectrics have a lower dielectric constant due to decreased polarization arising from neutralization of dipoles and charged carriers as baking temperatures increase. The leakage through PMMA gate dielectric increases with decreasing dielectric thickness and increasing electric field. Unlike conventional high-k gate dielectrics, such low-k organic gate dielectrics are potentially attractive for devices such as the proposed Bilayer pseudoSpin Field-Effect Transistor or flexible high speed graphene electronics.

Effects of cesium ion-implantation on mechanical and electrical properties of organosilicate low-k films

Energy Technology Data Exchange (ETDEWEB)

Li, W.; Pei, D.; Guo, X.; Cheng, M. K.; Lee, S.; Shohet, J. L. [Plasma Processing and Technology Laboratory, Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Lin, Q. [IBM T.J. Watson Research Center, Yorktown Heights, New York 10598 (United States); King, S. W. [Intel Corporation, Hillsboro, Oregon 97124 (United States)

2016-05-16

The effects of cesium (Cs) ion-implantation on uncured plasma-enhanced chemical-vapor-deposited organosilicate low dielectric constant (low-k) (SiCOH) films have been investigated and compared with an ultraviolet (UV) cured film. The mechanical properties, including the elastic modulus and hardness, of the SiCOH low-k films are improved by up to 30% with Cs implantation, and further up to 52% after annealing at 400 °C in a N{sub 2} ambient for 1 h. These improvements are either comparable to or better than the effects of UV-curing. They are attributed to an enhancement of the Si-O-Si network structure. The k-value of the SiCOH films increased slightly after Cs implantation, and increased further after annealing. These increases are attributed to two carbon-loss mechanisms, i.e., the carbon loss due to Si-CH{sub 3} bond breakage from implanted Cs ions, and the carbon loss due to oxidation during the annealing. The time-zero dielectric breakdown strength was improved after the Cs implantation and the annealing, and was better than the UV-cured sample. These results indicate that Cs ion implantation could be a supplement to or a substitution for the currently used UV curing method for processing SiCOH low-k films.

Low frequency ac conduction and dielectric relaxation in poly(N ...

Indian Academy of Sciences (India)

The ac conductivity and dielectric constant of poly(N-methyl pyrrole) thin films have been investigated in the temperature range 77–350 K and in the frequency range 102–106 Hz. The well defined loss peaks have been observed in the temperature region where measured ac conductivity approaches dc conductivity.

Investigation of dielectric properties of heterostructures based on ZnO structures

Directory of Open Access Journals (Sweden)

Selçuk A.H.

2018-03-01

Full Text Available The voltage and frequency dependence of dielectric constant є′, dielectric loss є″, electrical modulus M″, M′, loss tangent tanδ and AC electrical conductivity σAC of p-Si/ZnO/PMMA/Al, p-Si/ZnO/Al and p-Si/PMMA/Al structures have been investigated by means of experimental G-V and C-V measurements at 30 kHz, 100kHz, 500 kHz and 1 MHz in this work. While the values of є′, є″, tanδ and σAC decreased, the values of M′ and M″ increased for these structures when frequency was increased and those of p-Si/ZnO/Al and p-Si/PMMA/Al were comparable with those of p-Si/ZnO/PMMA/Al. The obtained results showed that the values of p-Si/ZnO/PMMA/Al structure were lower than the values of p-Si/ZnO/Al and p-Si/PMMA/Al.

High Dielectric Constant Study of TiO2-Polypyrrole Composites with Low Contents of Filler Prepared by In Situ Polymerization

Directory of Open Access Journals (Sweden)

Khalil Ahmed

2016-01-01

Full Text Available TiO2/polypyrrole composites with high dielectric constant have been synthesized by in situ polymerization of pyrrole in an aqueous dispersion of low concentration of TiO2, in the presence of small amount of HCl. Structural, optical, surface morphological, and thermal properties of the composites were investigated by X-ray diffractometer, Fourier transform infrared spectroscopy, field-emission scanning electron microscopy, and thermogravimetric analysis, respectively. The data obtained from diffractometer and thermal gravimetric analysis confirmed the crystalline nature and thermal stability of the prepared composites. The dielectric constant of 5 wt% TiO2 increased with filler content up to 4.3 × 103 at 1 kHz and then decreased to 1.25 × 103 at 10 kHz.

New theory of effective work functions at metal/high-k dielectric interfaces : application to metal/high-k HfO2 and la2O 3 dielectric interfaces

OpenAIRE

Shiraishi, Kenji; Nakayama, Takashi; Akasaka, Yasushi; Miyazaki, Seiichi; Nakaoka, Takashi; Ohmori, Kenji; Ahmet, Parhat; Torii, Kazuyoshi; Watanabe, Heiji; Chikyow, Toyohiro; Nara, Yasuo; Iwai, Hiroshi; Yamada, Keisaku

2006-01-01

We have constructed a universal theory of the work functions at metal/high-k HfO2 and La2O3 dielectric interfaces by introducing a new concept of generalized charge neutrality levels. Our theory systematically reproduces the experimentally observed work functions of various gate metals on Hf-based high-k dielectrics, including the hitherto unpredictable behaviors of the work functions of p-metals. Our new concept provides effective guiding principles to achieving near-bandedge work functions ...

Investigation of capacitance characteristics in metal/high-k

Indian Academy of Sciences (India)

Keywords. C − V characteristic; high-k dielectric; interface state density; MIS structure; nanotechnology; TCAD simulation. Abstract. Capacitance vs. voltage ( C − V ) curves at AC high frequency of a metal–insulator–semiconductor (MIS) capacitorare investigated in this paper. Bi-dimensional simulations with Silvaco TCAD ...

Dielectric spectroscopy studies of low-disorder and low-dimensional materials

OpenAIRE

Tripathi, Pragya

2016-01-01

In this thesis we employ dielectric spectroscopy (in different implementations) to study the dielectric properties of different materials ranging from completely disordered supercooled liquids to low-disorder solids with only ratcheting reorientational motions, to low-dimensional systems such as thin films or needle-like crystals. The probed material properties include the electrical conductivity, the space-charge processes due to sample heterogeneities, molecular dynamics, hydrogen-bond dyna...

A threshold-voltage model for small-scaled GaAs nMOSFET with stacked high-k gate dielectric

International Nuclear Information System (INIS)

Liu Chaowen; Xu Jingping; Liu Lu; Lu Hanhan; Huang Yuan

2016-01-01

A threshold-voltage model for a stacked high-k gate dielectric GaAs MOSFET is established by solving a two-dimensional Poisson's equation in channel and considering the short-channel, DIBL and quantum effects. The simulated results are in good agreement with the Silvaco TCAD data, confirming the correctness and validity of the model. Using the model, impacts of structural and physical parameters of the stack high-k gate dielectric on the threshold-voltage shift and the temperature characteristics of the threshold voltage are investigated. The results show that the stacked gate dielectric structure can effectively suppress the fringing-field and DIBL effects and improve the threshold and temperature characteristics, and on the other hand, the influence of temperature on the threshold voltage is overestimated if the quantum effect is ignored. (paper)

Pentacene based thin film transistors with high-k dielectric Nd2O3 as a gate insulator

International Nuclear Information System (INIS)

Sarma, R.; Saikia, D.

2010-01-01

We have investigated the pentacene based Organic Thin Film Transistors (OTFTs) with high-k dielectric Nd 2 O 3 . Use of high dielectric constant (high-k) gate insulator Nd 2 O 3 reduces the threshold voltage and sub threshold swing of the OTFTs. The calculated threshold voltage -2.2V and sub-threshold swing 1V/decade, current ON-OFF ratio is 1.7 X 10 4 and mobility is 0.13cm 2 /V.s. Pentacene film is deposited on Nd 2 O 3 surface using two step deposition method. Deposited pentacene film is found poly crystalline in nature. (author)

Numerical and experimental investigation of dielectric recovery in supercritical N2

International Nuclear Information System (INIS)

Zhang, J; Van Heesch, E J M; Markosyan, A H; Ebert, U; Seeger, M; Van Veldhuizen, E M

2015-01-01

A supercritical (SC) nitrogen (N 2 ) switch is designed and tested. The dielectric strength and recovery rate of the SC switch are investigated by experiments. In order to theoretically study the discharge and recovery process of the SC N 2 switch under high repetition rate operation, a numerical model is developed. For SC N 2 with initial parameters of p = 80.9 bar and T = 300 K, the simulation results show that within several nanoseconds after the streamer bridges the switch gap, the spark is fully developed and this time depends on the applied electric field between electrodes. During the whole discharge process, the maximum temperature in the channel is about 20 000 K. About 10 µs after the spark excitation of 200 ns duration, the temperature on the axis decays to T axis  ⩽ 1500 K, mainly contributed by the gas expansion and heat transfer mechanisms. After 100 µs, the dielectric strength of the gap recovers to above half of the cold breakdown voltage due to the temperature decay in the channel. Both experimental and numerical investigations indicate that supercritical fluid is a good insulating medium that has a proved high breakdown voltage and fast recovery speed. (paper)

A simple method for reducing inevitable dielectric loss in high-permittivity dielectric elastomers

DEFF Research Database (Denmark)

Madsen, Frederikke Bahrt; Yu, Liyun; Mazurek, Piotr Stanislaw

2016-01-01

elastomer matrix, with high dielectric permittivity and a low Young's modulus, aligned with no loss of mechanical stability, was prepared through the use of commercially available chloropropyl-functional silicone oil mixed into a tough commercial liquid silicone rubber silicone elastomer. The addition...... also decreased the dielectric losses of an elastomer containing dielectric permittivity-enhancing TiO2 fillers. Commercially available chloropropyl-functional silicone oil thus constitutes a facile method for improved silicone DEs, with very low dielectric losses.......Commercial viability of dielectric elastomers (DEs) is currently limited by a few obstacles, including high driving voltages (in the kV range). Driving voltage can be lowered by either decreasing the Young's modulus or increasing the dielectric permittivity of silicone elastomers, or a combination...

Positron annihilation lifetime spectroscopy (PALS) application in metal barrier layer integrity for porous low- k materials

CERN Document Server

Simon, Lin; Gidley, D W; Wetzel, J T; Monnig, K A; Ryan, E T; Simon, Jang; Douglas, Yu; Liang, M S; En, W G; Jones, E C; Sturm, J C; Chan, M J; Tiwari, S C; Hirose, M

2002-01-01

Positron Annihilation Lifetime Spectroscopy (PALS) is a useful tool to pre-screen metal barrier integrity for Si-based porous low-k dielectrics. Pore size of low-k, thickness of metal barrier Ta, positronium (Ps) leakage from PALS, trench sidewall morphology, electrical test from one level metal (1LM) pattern wafer and Cu diffusion analysis were all correlated. Macro-porous low-k (pore size >=200 AA) and large scale meso-porous low-k (>50~200 AA) encounter both Ps leakage and Cu diffusion into low-k dielectric in the 0.25 mu mL/0.3 mu mS structures when using SEMATECH in-house PVD Ta 250 AA as barrier layer. For small scale meso-porous (>20~50 AA) and micro- porous (<=20 AA) low-k, no Ps leakage and no Cu diffusion into low-k were observed even with PVD Ta 50 AA, which is proved also owing to sidewall densification to seal all sidewall pores due to plasma etch and ash. For future technology, smaller pore size of porous Si-based low-k (=<50 AA) will be preferential for dense low-k like trench sidewall to...

A threshold-voltage model for small-scaled GaAs nMOSFET with stacked high-k gate dielectric

Science.gov (United States)

Chaowen, Liu; Jingping, Xu; Lu, Liu; Hanhan, Lu; Yuan, Huang

2016-02-01

A threshold-voltage model for a stacked high-k gate dielectric GaAs MOSFET is established by solving a two-dimensional Poisson's equation in channel and considering the short-channel, DIBL and quantum effects. The simulated results are in good agreement with the Silvaco TCAD data, confirming the correctness and validity of the model. Using the model, impacts of structural and physical parameters of the stack high-k gate dielectric on the threshold-voltage shift and the temperature characteristics of the threshold voltage are investigated. The results show that the stacked gate dielectric structure can effectively suppress the fringing-field and DIBL effects and improve the threshold and temperature characteristics, and on the other hand, the influence of temperature on the threshold voltage is overestimated if the quantum effect is ignored. Project supported by the National Natural Science Foundation of China (No. 61176100).

Low dielectric and low surface free energy flexible linear aliphatic alkoxy core bridged bisphenol cyanate ester based POSS nanocomposites

Directory of Open Access Journals (Sweden)

Muthukaruppan eAlagar

2013-10-01

Full Text Available The aim of the present work is to develop a new type of flexible linear aliphatic alkoxy core bridged bisphenol cyanate ester (AECE based POSS nanocomposites for low k applications. The POSS-AECE nanocomposites were developed by incorporating varying weight percentages (0, 5 and 10 wt % of octakis (dimethylsiloxypropylglycidylether silsesquioxane (OG-POSS into cyanate esters. Data from thermal and dielectric studies imply that the POSS reinforced nanocomposite exhibits higher thermal stability and low dielectric value of k=2.4 (10 wt% POSS-AECE4 compared than those of neat AECE. From the contact angle measurement, it is inferred that, the increase in the percentage incorporation of POSS in to AECE, the values of water contact angle was enhanced. Further, the value of surface free energy was lower when compared to that of neat AECE. The molecular level dispersion of POSS into AECE was ascertained from SEM and TEM analyses.

Atmospheric Pressure Plasma Jet-Assisted Synthesis of Zeolite-Based Low-k Thin Films.

Science.gov (United States)

Huang, Kai-Yu; Chi, Heng-Yu; Kao, Peng-Kai; Huang, Fei-Hung; Jian, Qi-Ming; Cheng, I-Chun; Lee, Wen-Ya; Hsu, Cheng-Che; Kang, Dun-Yen

2018-01-10

Zeolites are ideal low-dielectric constant (low-k) materials. This paper reports on a novel plasma-assisted approach to the synthesis of low-k thin films comprising pure-silica zeolite MFI. The proposed method involves treating the aged solution using an atmospheric pressure plasma jet (APPJ). The high reactivity of the resulting nitrogen plasma helps to produce zeolite crystals with high crystallinity and uniform crystal size distribution. The APPJ treatment also remarkably reduces the time for hydrothermal reaction. The zeolite MFI suspensions synthesized with the APPJ treatment are used for the wet deposition to form thin films. The deposited zeolite thin films possessed dense morphology and high crystallinity, which overcome the trade-off between crystallinity and film quality. Zeolite thin films synthesized using the proposed APPJ treatment achieve low leakage current (on the order of 10 -8 A/cm 2 ) and high Young's modulus (12 GPa), outperforming the control sample synthesized without plasma treatment. The dielectric constant of our zeolite thin films was as low as 1.41. The overall performance of the low-k thin films synthesized with the APPJ treatment far exceed existing low-k films comprising pure-silica MFI.

Phase sensitive molecular dynamics of self-assembly glycolipid thin films: A dielectric spectroscopy investigation

Science.gov (United States)

Velayutham, T. S.; Ng, B. K.; Gan, W. C.; Majid, W. H. Abd.; Hashim, R.; Zahid, N. I.; Chaiprapa, Jitrin

2014-08-01

Glycolipid, found commonly in membranes, is also a liquid crystal material which can self-assemble without the presence of a solvent. Here, the dielectric and conductivity properties of three synthetic glycolipid thin films in different thermotropic liquid crystal phases were investigated over a frequency and temperature range of (10-2-106 Hz) and (303-463 K), respectively. The observed relaxation processes distinguish between the different phases (smectic A, columnar/hexagonal, and bicontinuous cubic Q) and the glycolipid molecular structures. Large dielectric responses were observed in the columnar and bicontinuous cubic phases of the longer branched alkyl chain glycolipids. Glycolipids with the shortest branched alkyl chain experience the most restricted self-assembly dynamic process over the broad temperature range studied compared to the longer ones. A high frequency dielectric absorption (Process I) was observed in all samples. This is related to the dynamics of the hydrogen bond network from the sugar group. An additional low-frequency mechanism (Process II) with a large dielectric strength was observed due to the internal dynamics of the self-assembly organization. Phase sensitive domain heterogeneity in the bicontinuous cubic phase was related to the diffusion of charge carriers. The microscopic features of charge hopping were modelled using the random walk scheme, and two charge carrier hopping lengths were estimated for two glycolipid systems. For Process I, the hopping length is comparable to the hydrogen bond and is related to the dynamics of the hydrogen bond network. Additionally, that for Process II is comparable to the bilayer spacing, hence confirming that this low-frequency mechanism is associated with the internal dynamics within the phase.

From surface to volume plasmons in hyperbolic metamaterials: General existence conditions for bulk high-k waves in metal-dielectric and graphene-dielectric multilayers

DEFF Research Database (Denmark)

Zhukovsky, Sergei; Andryieuski, Andrei; Sipe, John E.

2014-01-01

-dielectric and recently introduced graphene-dielectric stacks. We confirm that short-range surface plasmons in thin metal layers can give rise to hyperbolic metamaterial properties and demonstrate that long-range surface plasmons cannot. We also show that graphene-dielectric multilayers tend to support high- k waves...

Dielectric response of KCN crystals at ultra-low frequencies

OpenAIRE

Ziemath, Ervino C.; Aegerter, Michel A.; Slaets, J.

1987-01-01

We describe an ultra low frequency equipment employing programmable digital technique. The system is used to measure the dielectric parameters et, en and tg d or pure KCN crystals as a function of temperature in the frequency range 10-2 Hz to 40 Hz. The relaxation time of the Cn dipoles presents a classical temperature activated reorientation behaviour characterized by an Arrhenius law t=to exp (U/kT) with t0=7,26 x 10-15 s and U = 0,147 eV.

Effects of plasma and vacuum-ultraviolet exposure on the mechanical properties of low-k porous organosilicate glass

Science.gov (United States)

X. Guo; J.E. Jakes; S. Banna; Y. Nishi; J.L. Shohet

2014-01-01

The effects of plasma exposure and vacuum-ultraviolet (VUV) irradiation on the mechanical properties of low-k porous organosilicate glass (SiCOH) dielectric films were investigated. Nanoindentation measurements were made on SiCOH films before and after exposure to an electron-cyclotron-resonance plasma or a monochromatic synchrotron VUV beam, to determine the changes...

Effect of water uptake on the fracture behavior of low-k organosilicate glass

Science.gov (United States)

Xiangyu Guo; Joseph E. Jakes; Samer Banna; Yoshio Nishi; J. Leon Shohet

2014-01-01

Water uptake in porous low-k dielectrics has become a significant challenge for both back-end-of-the-line integration and circuit reliability. This work examines the effects of water uptake on the fracture behavior of nanoporous low-k organosilicate glass. By using annealing dehydration and humidity conditioning, the roles of different water types...

Current leakage relaxation and charge trapping in ultra-porous low-k materials

International Nuclear Information System (INIS)

Borja, Juan; Plawsky, Joel L.; Gill, William N.; Lu, T.-M.; Bakhru, Hassaram

2014-01-01

Time dependent dielectric failure has become a pivotal aspect of interconnect design as industry pursues integration of sub-22 nm process-technology nodes. Literature has provided key information about the role played by individual species such as electrons, holes, ions, and neutral impurity atoms. However, no mechanism has been shown to describe how such species interact and influence failure. Current leakage relaxation in low-k dielectrics was studied using bipolar field experiments to gain insight into how charge carrier flow becomes impeded by defects within the dielectric matrix. Leakage current decay was correlated to injection and trapping of electrons. We show that current relaxation upon inversion of the applied field can be described by the stretched exponential function. The kinetics of charge trapping events are consistent with a time-dependent reaction rate constant, k=k 0 ⋅(t+1) β−1 , where 0 < β < 1. Such dynamics have previously been observed in studies of charge trapping reactions in amorphous solids by W. H. Hamill and K. Funabashi, Phys. Rev. B 16, 5523–5527 (1977). We explain the relaxation process in charge trapping events by introducing a nonlinear charge trapping model. This model provides a description on the manner in which the transport of mobile defects affects the long-tail current relaxation processes in low-k films

Numerical investigation of the effect of driving voltage pulse shapes on the characteristics of low-pressure argon dielectric barrier discharge

International Nuclear Information System (INIS)

Eslami, E.; Barjasteh, A.; Morshedian, N.

2015-01-01

In this work, we numerically compare the effect of a sinusoidal, triangular, and rectangular pulsed voltage profile on the calculated particle production, electric current, and gas voltage in a dielectric barrier discharge. The total argon gas pressure of 400 Pa, the distance between dielectrics of 5 mm, the dielectric thickness of 0.7 mm, and the temperature of T = 300 K were considered as input parameters. The different driving voltage pulse shapes (triangular, rectangular, and sinusoidal) are considered as applied voltage with a frequency of 7 kHz and an amplitude of 700 V peak to peak. It is shown that applying a rectangular voltage, as compared with a sinusoidal or triangle voltage, increases the current peak, while the peak width is decreased. Higher current density is related to high production of charged particles, which leads to the generation of some highly active species, such as Ar* (4s level), and Ar** (4p level) in the gap

Investigation of dielectric behavior of the PVC/BaTiO3 composite in low-frequencies

Science.gov (United States)

Berrag, A.; Belkhiat, S.; Madani, L.

2018-04-01

Polyvinyl chloride (PVC) is widely used as insulator in electrical engineering especially as cable insulation sheaths. In order to improve the dielectric properties, polymers are mixed with ceramics. In this paper, PVC composites with different weight percentages 2 wt.%, 5 wt.%, 8 wt.% and 10 wt.% were prepared and investigated. Loss index (𝜀″) and dielectric constant (𝜀‧) have been measured using an impedance analyzer RLC. Fourier transform infrared (FTIR) spectroscopy, scanning electron microscopy (SEM) equipped with energy dispersive X-ray (EDX) have been used as characterization techniques. The incorporation of BaTiO3 does not modify the crystallinity and the morphology of the PVC but reduces the space charges, therefore the dielectric losses. The frequency response analysis has been followed in the frequency ranges (20-140 Hz and 115-1 MHz). Relaxation frequencies have been evaluated in each frequency range. Experimental measurements have been validated using Cole-Cole’s model. Experimental results show well that BaTiO3 as a filler improves the dielectric properties of PVC.

Ultra low-K shrinkage behavior when under electron beam in a scanning electron microscope

Energy Technology Data Exchange (ETDEWEB)

Lorut, F.; Imbert, G. [ST Microelectronics, 850 rue Jean Monnet, 38926 Crolles Cedex (France); Roggero, A. [Centre National d' Etudes Spatiales, 18 Avenue Edouard Belin, 31400 Toulouse (France)

2013-08-28

In this paper, we investigate the tendency of porous low-K dielectrics (also named Ultra Low-K, ULK) behavior to shrink when exposed to the electron beam of a scanning electron microscope. Various experimental electron beam conditions have been used for irradiating ULK thin films, and the resulting shrinkage has been measured through use of an atomic force microscope tool. We report the shrinkage to be a fast, cumulative, and dose dependent effect. Correlation of the shrinkage with incident electron beam energy loss has also been evidenced. The chemical modification of the ULK films within the interaction volume has been demonstrated, with a densification of the layer and a loss of carbon and hydrogen elements being observed.

Evolutionary search for new high-k dielectric materials: methodology and applications to hafnia-based oxides.

Science.gov (United States)

Zeng, Qingfeng; Oganov, Artem R; Lyakhov, Andriy O; Xie, Congwei; Zhang, Xiaodong; Zhang, Jin; Zhu, Qiang; Wei, Bingqing; Grigorenko, Ilya; Zhang, Litong; Cheng, Laifei

2014-02-01

High-k dielectric materials are important as gate oxides in microelectronics and as potential dielectrics for capacitors. In order to enable computational discovery of novel high-k dielectric materials, we propose a fitness model (energy storage density) that includes the dielectric constant, bandgap, and intrinsic breakdown field. This model, used as a fitness function in conjunction with first-principles calculations and the global optimization evolutionary algorithm USPEX, efficiently leads to practically important results. We found a number of high-fitness structures of SiO2 and HfO2, some of which correspond to known phases and some of which are new. The results allow us to propose characteristics (genes) common to high-fitness structures--these are the coordination polyhedra and their degree of distortion. Our variable-composition searches in the HfO2-SiO2 system uncovered several high-fitness states. This hybrid algorithm opens up a new avenue for discovering novel high-k dielectrics with both fixed and variable compositions, and will speed up the process of materials discovery.

Thermosetting resins with high fractions of free volume and inherently low dielectric constants.

Science.gov (United States)

Lin, Liang-Kai; Hu, Chien-Chieh; Su, Wen-Chiung; Liu, Ying-Ling

2015-08-18

This work demonstrates a new class of thermosetting resins, based on Meldrum's acid (MA) derivatives, which have high fractions of free volume and inherently low k values of about 2.0 at 1 MHz. Thermal decomposition of the MA groups evolves CO2 and acetone to create air-trapped cavities so as to reduce the dielectric constants.

Numerical investigation of dielectric barrier discharges

Science.gov (United States)

Li, Jing

1997-12-01

A dielectric barrier discharge (DBD) is a transient discharge occurring between two electrodes in coaxial or planar arrangements separated by one or two layers of dielectric material. The charge accumulated on the dielectric barrier generates a field in a direction opposite to the applied field. The discharge is quenched before an arc is formed. It is one of the few non-thermal discharges that operates at atmospheric pressure and has the potential for use in pollution control. In this work, a numerical model of the dielectric barrier discharge is developed, along with the numerical approach. Adaptive grids based on the charge distribution is used. A self-consistent method is used to solve for the electric field and charge densities. The Successive Overrelaxation (SOR) method in a non-uniform grid spacing is used to solve the Poisson's equation in the cylindrically-symmetric coordinate. The Flux Corrected Transport (FCT) method is modified to solve the continuity equations in the non-uniform grid spacing. Parametric studies of dielectric barrier discharges are conducted. General characteristics of dielectric barrier discharges in both anode-directed and cathode-directed streamer are studied. Effects of the dielectric capacitance, the applied field, the resistance in external circuit and the type of gases (O2, air, N2) are investigated. We conclude that the SOR method in an adaptive grid spacing for the solution of the Poisson's equation in the cylindrically-symmetric coordinate is convergent and effective. The dielectric capacitance has little effect on the g-factor of radical production, but it determines the strength of the dielectric barrier discharge. The applied field and the type of gases used have a significant role on the current peak, current pulse duration and radical generation efficiency, discharge strength, and microstreamer radius, whereas the external series resistance has very little effect on the streamer properties. The results are helpful in

Measuring the diffusion of Ti and Cu in low-k materials for microelectronic devices by EELS, EFTEM and EDX

International Nuclear Information System (INIS)

Barnes, J-P; Lafond, D; Guedj, C; Fayolle, M; Meininger, P; Maitrejean, S; David, T; Posseme, N; Bayle-Guillemaud, P; Chabli, Amal

2006-01-01

The need to reduce RC delay and cross talk in Cu interconnects means that ultra low-k dielectrics such as porous SiCOH are being integrated into microelectronic devices. Unfortunately porous materials lead to integration issues such as metal diffusion into the porosity of the dielectric, especially when chemical vapour deposition (CVD) methods are used for metal deposition. In our case, the copper anti-diffusion barrier used before Cu deposition is MOCVD TiN. Without an appropriate surface treatment (pore sealing) of the low-k the TiN may diffuse in the porosity. The presence of Ti or Cu in the low-k is deleterious as it can raise the dielectric constant and the leakage current. EFTEM EELS and EDX have been used to map Ti, Cu, O and C as a function of process conditions

Dielectric properties of polyhedral oligomeric silsesquioxane (POSS)-based nanocomposites at 77k

International Nuclear Information System (INIS)

Pan, Ming-Jen; Gorzkowski, Edward; McAllister, Kelly

2011-01-01

The goal of this study is to develop dielectric nanocomposites for high energy density applications at liquid nitrogen temperature by utilizing a unique nano-material polyhedral oligomeric silsesquioxanes (POSS). A POSS molecule is consisted of a silica cage core with 8 silicon and 12 oxygen atoms and organic functional groups attached to the corners of the cage. In this study, we utilize POSS for the fabrication of nanocomposites both as a silica nanoparticle filler to enhance the breakdown strength and as a surfactant for effective dispersion of high permittivity ceramic nanoparticles in a polymer matrix. The matrix materials selected for the study are polyvinylidene fluoride (PVDF) and poly(methyl methacrylate) (PMMA). The ceramic nanoparticles are barium strontium titanate (BST 50/50) and strontium titanate. The dielectric properties of the solution-cast nanocomposites films were correlated to the composition and processing conditions. We determined that the addition of POSS did not provide enhanced dielectric performance in PVDF- and PMMA-based materials at either room temperature or 77K. In addition, we found that the dielectric breakdown strength of PMMA is lower at 77K than at room temperature, contradicting literature data.

Study of high-k gate dielectrics by means of positron annihilation

International Nuclear Information System (INIS)

Uedono, A.; Naito, T.; Otsuka, T.; Ito, K.; Shiraishi, K.; Yamabe, K.; Miyazaki, S.; Watanabe, H.; Umezawa, N.; Hamid, A.; Chikyow, T.; Ohdaira, T.; Suzuki, R.; Ishibashi, S.; Inumiya, S.; Kamiyama, S.; Akasaka, Y.; Nara, Y.; Yamada, K.

2007-01-01

High-dielectric constant (high-k) gate materials, such as HfSiO x and HfAlO x , fabricated by atomic-layer-deposition techniques were characterized using monoenergetic positron beams. Measurements of the Doppler broadening spectra of annihilation radiation and the lifetime spectra of positrons indicated that positrons annihilated from the trapped state by open volumes that exist intrinsically in amorphous structures of the films. The size distributions of the open volumes and the local atomic configurations around such volumes can be discussed using positron annihilation parameters, and they were found to correlate with the electrical properties of the films. We confirmed that the positron annihilation is useful technique to characterize the matrix structure of amorphous high-k materials, and can be used to determine process parameters for the fabrication of high-k gate dielectrics. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Influence of the ion bombardment of O{sub 2} plasmas on low-k materials

Energy Technology Data Exchange (ETDEWEB)

Verdonck, Patrick, E-mail: verdonck@imec.be [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Samara, Vladimir [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Open University, Materials Engineering, Walton Hall, Milton Keynes MK7 6AA (United Kingdom); Goodyear, Alec [Open University, Materials Engineering, Walton Hall, Milton Keynes MK7 6AA (United Kingdom); Ferchichi, Abdelkarim; Van Besien, Els; Baklanov, Mikhail R. [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Braithwaite, Nicholas [Open University, Department of Physics and Astronomy, Walton Hall, Milton Keynes MK7 6AA (United Kingdom)

2011-10-31

In this study, special tests were devised in order to investigate the influence of ion bombardment on the damage induced in low-k dielectrics by oxygen plasmas. By placing a sample that suffered a lot of ion bombardment and one which suffered little ion bombardment simultaneously in the same plasma, it was possible to verify that ion bombardment in fact helped to protect the low-k film against oxygen plasma induced damage. Exhaustive analyses (ellipsometry, X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, porosimetry, capacitance-voltage (C-V) measurements, water contact angle analysis) show that ion bombardment induced the formation of a denser top layer in the film, which then hampered further penetration of active oxygen species deeper into the bulk. This was further confirmed by other tests combining capacitively and inductively coupled plasmas. Therefore, it was possible to conclude that, at least for these plasmas, ion bombardment may help to reduce plasma induced damage to low-k materials.

Disclosed dielectric and electromechanical properties of hydrogenated nitrile–butadiene dielectric elastomer

International Nuclear Information System (INIS)

Yang, Dan; Tian, Ming; Dong, Yingchao; Liu, Haoliang; Yu, Yingchun; Zhang, Liqun

2012-01-01

This paper presents a comprehensive study of the effects of acrylonitrile content, crosslink density and plasticization on the dielectric and electromechanical performances of hydrogenated nitrile–butadiene dielectric elastomer. It was found that by increasing the acrylonitrile content of hydrogenated nitrile–butadiene dielectric elastomer, the dielectric constant will be improved accompanied with a sharp decrease of electrical breakdown strength leading to a small actuated strain. At a fixed electric field, a high crosslink density increased the elastic modulus of dielectric elastomer, but it also enhanced the electrical breakdown strength leading to a high actuated strain. Adding a plasticizer into the dielectric elastomer decreased the dielectric constant and electrical breakdown strength slightly, but reduced the elastic modulus sharply, which was beneficial for obtaining a large strain at low electric field from the dielectric elastomer. The largest actuated strain of 22% at an electric field of 30 kV mm −1 without any prestrain was obtained. Moreover, the hydrogenated nitrile–butadiene dielectric actuator showed good history dependence. This proposed material has great potential to be an excellent dielectric elastomer. (paper)

Dielectric properties of the ITER TFMC insulation after low temperature reactor irradiation

International Nuclear Information System (INIS)

Humer, K.; Weber, H.W.; Hastik, R.; Hauser, H.; Gerstenberg, H.

2001-01-01

The insulation system for the Toroidal Field Model Coil of ITER is a fiber reinforced plastic (FRP) laminate, which consists of a combined Kapton/R-glass-fiber reinforcement tape, vacuum-impregnated with an epoxy DGEBA system. Pure disk shaped laminates, disk shaped FRP/stainless-steel sandwiches, and conductor insulation prototypes were irradiated at 5 K in a fission reactor up to a fast neutron fluence of 10 22 m -2 (E>0.1MeV) to investigate the radiation induced degradation of the dielectric strength of the insulation system. After warm-up to room temperature, swelling, weight loss, and the breakdown strength were measured at 77 K. The sandwich swells by 4% at a fluence of 5x10 21 m -2 and by 9% at 1x10 22 m -2 . The weight loss of the FRP is 2% at 1x10 22 m -2 . The dielectric strength remained unchanged over the whole dose range. (author)

Effects of fluoride residue on thermal stability in Cu/porous low-k interconnects

Energy Technology Data Exchange (ETDEWEB)

Kobayashi, Y.; Ozaki, S.; Nakamura, T. [FUJITSU LABORATORIES Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197 (Japan)

2014-06-19

We have investigated the effects of fluoride residue on the thermal stability of a Cu/barrier metal (BM)/porous low-k film (k < 2.3) structure. We confirmed that the Cu agglomerated more on a BM/inter layer dielectric (ILD) with a fluoride residue. To consider the effect of fluoride residue on Cu agglomeration, the structural state at the Cu/BM interface was evaluated with a cross-section transmission electron microscope (TEM) and atomic force microscope (AFM). In addition, the chemical bonding state at the Cu/BM interface was evaluated with the interface peeling-off method and X-ray photoelectron spectroscopy (XPS). Moreover, we confirmed the ionization of fluoride residue and oxidation of Cu with fluoride and moisture to clarify the effect of fluoride residue on Cu. Our experimental results indicated that the thermal stability in Cu/porous low-k interconnects was degraded by enhancement of Cu oxidation with fluoride ions diffusion as an oxidizing catalyst.

Low temperature dielectric relaxation and charged defects in ferroelectric thin films

Directory of Open Access Journals (Sweden)

A. Artemenko

2013-04-01

Full Text Available We report a dielectric relaxation in BaTiO3-based ferroelectric thin films of different composition and with several growth modes: sputtering (with and without magnetron and sol-gel. The relaxation was observed at cryogenic temperatures (T < 100 K for frequencies from 100 Hz up to 10 MHz. This relaxation activation energy is always lower than 200 meV and is very similar to the relaxation that we reported in the parent bulk perovskites. Based on our Electron Paramagnetic Resonance (EPR investigation, we ascribe this dielectric relaxation to the hopping of electrons among Ti3+-V(O charged defects. Being dependent on the growth process and on the amount of oxygen vacancies, this relaxation can be a useful probe of defects in actual integrated capacitors with no need for specific shaping.

Study of PECVD films containing flourine and carbon and diamond like carbon films for ultra low dielectric constant interlayer dielectric applications

Science.gov (United States)

Sundaram, Nandini Ganapathy

Lowering the capacitance of Back-end-of-line (BEOL) structures by decreasing the dielectric permittivity of the interlayer dielectric material in integrated circuits (ICs) lowers device delay times, power consumption and parasitic capacitance. a:C-F films that are thermally stable at 400°C were deposited using tetrafluorocarbon and disilane (5% by volume in Helium) as precursors. The bulk dielectric constant (k) of the film was optimized from 2.0 / 2.2 to 1.8 / 1.91 as-deposited and after heat treatment. Films, with highly promising k-values but discarded for failing to meet shrinkage rate requirements were salvaged by utilizing a novel extended heat treatment scheme. Film properties including chemical bond structure, F/C ratio, refractive index, surface planarity, contact angle, dielectric constant, flatband voltage shift, breakdown field potential and optical energy gap were evaluated by varying process pressure, power, substrate temperature and flow rate ratio (FRR) of processing gases. Both XPS and FTIR results confirmed that the stoichiometry of the ultra-low k (ULK) film is close to that of CF2 with no oxygen. C-V characteristics indicated the presence of negative charges that are either interface trapped charges or bulk charges. Average breakdown field strength was in the range of 2-8 MV/cm while optical energy gap varied between 2.2 eV and 3.4 eV. Irradiation or plasma damage significantly impacts the ability to integrate the film in VSLI circuits. The film was evaluated after exposure to oxygen plasma and HMDS vapors and no change in the FTIR spectra or refractive index was observed. Film is resistant to attack by developers CD 26 and KOH. While the film dissolves in UVN-30 negative resist, it is impermeable to PGDMA. A 12% increase in dielectric constant and a decrease in contact angle from 65° to 47° was observed post e-beam exposure. The modified Gaseous Electronics Conference (mGEC) reference cell was used to deposit DLC films using CH4 and Argon as

Low-temperature phase transition in γ-glycine single crystal. Pyroelectric, piezoelectric, dielectric and elastic properties

Energy Technology Data Exchange (ETDEWEB)

Tylczyński, Zbigniew, E-mail: zbigtyl@amu.edu.pl [Faculty of Physics, Adam Mickiewicz University, Umultowska 85, 61-614 Poznań (Poland); Busz, Piotr [Institute of Molecular Physics, Polish Academy of Science, Smoluchowskiego 17, 60-179 Poznań (Poland)

2016-11-01

Temperature changes in the pyroelectric, piezoelectric, elastic and dielectric properties of γ-glycine crystals were studied in the range 100 ÷ 385 K. The pyroelectric coefficient increases monotonically in this temperature range and its value at RT was compared with that of other crystals having glycine molecules. A big maximum in the d14 component of piezoelectric tensor compared by maximum in attenuation of the resonant face-shear mode were observed at 189 K. The components of the elastic stiffness tensor and other components of the piezoelectric tensor show anomalies at this temperature. The components of electromechanical coupling coefficient determined indicate that γ-glycine is a weak piezoelectric. The real and imaginary part of the dielectric constant measured in the direction perpendicular to the trigonal axis show the relaxation anomalies much before 198 K and the activation energies were calculated. These anomalies were interpreted as a result of changes in the NH{sub 3}{sup +} vibrations through electron-phonon coupling of the so called “dynamical transition”. The anomalies of dielectric constant ε*{sub 11} and piezoelectric tensor component d{sub 14} taking place at 335 K are associated with an increase in ac conductivity caused by charge transfer of protons. - Graphical abstract: Imaginary part of dielectric constant in [100] direction. - Highlights: • Piezoelectric, elastic and dielectric constants anomalies were discovered at 189 K. • These anomalies were interpreted as a result of so called “dynamical transition”. • Relaxational dielectric anomaly was explained by the dynamics of glycine molecules. • Pyroelectric coefficient of γ-glycine was determined in a wide temperature range. • Complex dielectric & piezoelectric anomalies at 335 K were caused by protons hopping.

The low-frequency dielectric properties of octopus arm muscle measured in vivo

International Nuclear Information System (INIS)

Hart, F.X.; Toll, R.B.; Berner, N.J.; Bennett, N.H.

1996-01-01

The conductance and capacitance of octopus arm are measured in vivo over the frequency range 5 Hz to 1 MHz. Measurement of these parameters for a number of electrode separations permits the determination of the variations in tissue conductivity and dielectric constant with frequency. In the range 1-100 kHz the conductivity is independent of the frequency f and the dielectric constant varies as f -1 . These results, in conjunction with those reported previously for frog skeletal muscle, are consistent with the fractal model for the dielectric properties of animal tissue proposed by Dissado. Transformation of the results to complex impedance spectra indicates the presence of a dispersion above 100 kHz. (author)

Polymethyl methacrylate (PMMA)-bismuth ferrite (BFO) nanocomposite: low loss and high dielectric constant materials with perceptible magnetic properties.

Science.gov (United States)

Tamboli, Mohaseen S; Palei, Prakash K; Patil, Santosh S; Kulkarni, Milind V; Maldar, Noormahmad N; Kale, Bharat B

2014-09-21

Herein, poly(methyl methacrylate)-bismuth ferrite (PMMA-BFO) nanocomposites were successfully prepared by an in situ polymerization method for the first time. Initially, the as prepared bismuth ferrite (BFO) nanoparticles were dispersed in the monomer, (methyl methacrylate) by sonication. Benzoyl peroxide was used to initiate the polymerization reaction in ethyl acetate medium. The nanocomposite films were subjected to X-ray diffraction analysis (XRD), (1)H NMR, field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), atomic force microscopy (AFM), thermogravimetric analysis (TGA), infrared spectroscopy (IR), dielectric and magnetic characterizations. The dielectric measurement of the nanocomposites was investigated at a frequency range of 10 Hz to 1 MHz. It was found that the nanocomposites not only showed a significantly increased value of the dielectric constant with an increase in the loading percentage of BFO as compared to pure PMMA, but also exhibited low dielectric loss values over a wide range of frequencies. The values of the dielectric constant and dielectric loss of the PMMA-BFO5 (5% BFO loading) sample at 1 kHz frequency was found be ~14 and 0.037. The variation of the ferromagnetic response of the nanocomposite was consistent with the varying volume percentage of the nanoparticles. The remnant magnetization (Mr) and saturation magnetization (Ms) values of the composites were found to be enhanced by increasing the loading percentage of BFO. The value of Ms for PMMA-BFO5 was found to be ~6 emu g(-1). The prima facie observations suggest that the nanocomposite is a potential candidate for application in high dielectric constant capacitors. Significantly, based on its magnetic properties the composite will also be useful for use in hard disk components.

Hysteresis behaviour of low-voltage organic field-effect transistors employing high dielectric constant polymer gate dielectrics

International Nuclear Information System (INIS)

Kim, Se Hyun; Yun, Won Min; Kwon, Oh-Kwan; Hong, Kipyo; Yang, Chanwoo; Park, Chan Eon; Choi, Woon-Seop

2010-01-01

Here, we report on the fabrication of low-voltage-operating pentacene-based organic field-effect transistors (OFETs) that utilize crosslinked cyanoethylated poly(vinyl alcohol) (CR-V) gate dielectrics. The crosslinked CR-V-based OFET could be operated successfully at low voltages (below 4 V), but abnormal behaviour during device operation, such as uncertainty in the field-effect mobility (μ) and hysteresis, was induced by the slow polarization of moieties embedded in the gate dielectric (e.g. polar functionalities, ionic impurities, water and solvent molecules). In an effort to improve the stability of OFET operation, we measured the dependence of μ and hysteresis on dielectric thickness, CR-V crosslinking conditions and sweep rate of the gate bias. The influence of the CR-V surface properties on μ, hysteresis, and the structural and morphological features of the pentacene layer grown on the gate dielectric was characterized and compared with the properties of pentacene grown on a polystyrene surface.

Silver Nanowire/MnO2 Nanowire Hybrid Polymer Nanocomposites: Materials with High Dielectric Permittivity and Low Dielectric Loss.

Science.gov (United States)

Zeraati, Ali Shayesteh; Arjmand, Mohammad; Sundararaj, Uttandaraman

2017-04-26

This study reports the fabrication of hybrid nanocomposites based on silver nanowire/manganese dioxide nanowire/poly(methyl methacrylate) (AgNW/MnO 2 NW/PMMA), using a solution casting technique, with outstanding dielectric permittivity and low dielectric loss. AgNW was synthesized using the hard-template technique, and MnO 2 NW was synthesized employing a hydrothermal method. The prepared AgNW:MnO 2 NW (2.0:1.0 vol %) hybrid nanocomposite showed a high dielectric permittivity (64 at 8.2 GHz) and low dielectric loss (0.31 at 8.2 GHz), which are among the best reported values in the literature in the X-band frequency range (8.2-12.4 GHz). The superior dielectric properties of the hybrid nanocomposites were attributed to (i) dimensionality match between the nanofillers, which increased their synergy, (ii) better dispersion state of AgNW in the presence of MnO 2 NW, (iii) positioning of ferroelectric MnO 2 NW in between AgNWs, which increased the dielectric permittivity of nanodielectrics, thereby increasing dielectric permittivity of the hybrid nanocomposites, (iv) barrier role of MnO 2 NW, i.e., cutting off the contact spots of AgNWs and leading to lower dielectric loss, and (v) AgNW aligned structure, which increased the effective surface area of AgNWs, as nanoelectrodes. Comparison of the dielectric properties of the developed hybrid nanocomposites with the literature highlights their great potential for flexible capacitors.

Atomic layer deposition of crystalline SrHfO3 directly on Ge (001) for high-k dielectric applications

International Nuclear Information System (INIS)

McDaniel, Martin D.; Ngo, Thong Q.; Ekerdt, John G.; Hu, Chengqing; Jiang, Aiting; Yu, Edward T.; Lu, Sirong; Smith, David J.; Posadas, Agham; Demkov, Alexander A.

2015-01-01

The current work explores the crystalline perovskite oxide, strontium hafnate, as a potential high-k gate dielectric for Ge-based transistors. SrHfO 3 (SHO) is grown directly on Ge by atomic layer deposition and becomes crystalline with epitaxial registry after post-deposition vacuum annealing at ∼700 °C for 5 min. The 2 × 1 reconstructed, clean Ge (001) surface is a necessary template to achieve crystalline films upon annealing. The SHO films exhibit excellent crystallinity, as shown by x-ray diffraction and transmission electron microscopy. The SHO films have favorable electronic properties for consideration as a high-k gate dielectric on Ge, with satisfactory band offsets (>2 eV), low leakage current (<10 −5 A/cm 2 at an applied field of 1 MV/cm) at an equivalent oxide thickness of 1 nm, and a reasonable dielectric constant (k ∼ 18). The interface trap density (D it ) is estimated to be as low as ∼2 × 10 12  cm −2  eV −1 under the current growth and anneal conditions. Some interfacial reaction is observed between SHO and Ge at temperatures above ∼650 °C, which may contribute to increased D it value. This study confirms the potential for crystalline oxides grown directly on Ge by atomic layer deposition for advanced electronic applications

Stable dielectric response of low-loss aromatic polythiourea thin films on Pt/SiO2 substrate

Directory of Open Access Journals (Sweden)

A. Eršte

2016-03-01

Full Text Available We have investigated dielectric properties of aromatic polythiourea (ArPTU, a polar polymer containing high dipolar moments with very low defect levels thin films that were developed on Pt/SiO2 substrate. The detected response is compared to the response of commercially available polymers, such as high density polyethylene (HDPE and polypropylene (PP, which are at present used in foil capacitors. Stable values of the dielectric constant ε′≈5 (being twice higher than in HDPE and PP over broad temperature and frequency ranges and dielectric losses as low as in commercial systems suggest ArPTU as a promising candidate for future use in a variety of applications.

Time-dependent dielectric breakdown measurements of porous organosilicate glass using mercury and solid metal probes

Energy Technology Data Exchange (ETDEWEB)

Pei, Dongfei; Nichols, Michael T.; Shohet, J. Leon, E-mail: shohet@engr.wisc.edu [Plasma Processing and Technology Laboratory, Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); King, Sean W.; Clarke, James S. [Intel Corporation, Hillsboro, Oregon 97124 (United States); Nishi, Yoshio [Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States)

2014-09-01

Time-dependent dielectric breakdown (TDDB) is one of the major concerns for low-k dielectric materials. During plasma processing, low-k dielectrics are subjected to vacuum ultraviolet photon radiation and charged-particle bombardment. To examine the change of TDDB properties, time-to-breakdown measurements are made to porous SiCOH before and after plasma exposure. Significant discrepancies between mercury and solid-metal probes are observed and have been shown to be attributed to mercury diffusion into the dielectric porosities.

Time-dependent dielectric breakdown measurements of porous organosilicate glass using mercury and solid metal probes

International Nuclear Information System (INIS)

Pei, Dongfei; Nichols, Michael T.; Shohet, J. Leon; King, Sean W.; Clarke, James S.; Nishi, Yoshio

2014-01-01

Time-dependent dielectric breakdown (TDDB) is one of the major concerns for low-k dielectric materials. During plasma processing, low-k dielectrics are subjected to vacuum ultraviolet photon radiation and charged-particle bombardment. To examine the change of TDDB properties, time-to-breakdown measurements are made to porous SiCOH before and after plasma exposure. Significant discrepancies between mercury and solid-metal probes are observed and have been shown to be attributed to mercury diffusion into the dielectric porosities

Complex dielectric modulus and relaxation response at low microwave frequency region of dielectric ceramic Ba6-3xNd8+2xTi18O54

Directory of Open Access Journals (Sweden)

Chian Heng Lee

2014-10-01

Full Text Available The desirable characteristics of Ba6-3xNd8+2xTi18O54 include high dielectric constant, low loss tangent, and high quality factor developed a new field for electronic applications. The microwave dielectric properties of Ba6-3xNd8+2xTi18O54, with x = 0.15 ceramics at different sintering temperatures (600–1300°C were investigated. The phenomenon of polarization produced by the applied electric field was studied. The dielectric properties with respect to frequency from 1 MHz to 1.5 GHz were measured using Impedance Analyzer, and the results were compared and analyzed. The highest dielectric permittivity and lowest loss factor were defined among the samples. The complex dielectric modulus was evaluated from the measured parameters of dielectric measurement in the same frequency range, and used to differentiate the contribution of grain and grain boundary.

Dielectric properties of Ga2O3-doped barium iron niobate ceramics

International Nuclear Information System (INIS)

Sanjoom, Kachaporn; Pengpat, Kamonpan; Eitssayeam, Sukum; Tunkasiri, Tawee; Rujijanagul, Gobwute

2014-01-01

Ga-doped BaFe 0.5 Nb 0.5 O 3 (Ba(Fe 1-x Ga x ) 0.5 Nb 0.5 O 3 ) ceramics were fabricated and their properties were investigated. All ceramics showed perovskite structure with cubic symmetry and the solubility of Ga in BFN ceramics had a limit at x = 0.2. Examination of the dielectric spectra indicated that all ceramic samples presented high dielectric constants that were frequency dependent. The x = 0.2 ceramic showed a very high dielectric constant (ε r > 240 000 at 1 kHz) while the x = 0.4 sample exhibited high thermal stability of dielectric constant with low loss tangent from room temperature (RT) to 100 C with ε r > 28 000 (at 1 kHz) when compared to other samples. By using a complex impedance analysis technique, bulk grain, grain boundary, and electrode response were found to affect the dielectric behavior that could be related to the Maxwell-Wagner polarization mechanism. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Al2O3 nanocrystals embedded in amorphous Lu2O3 high-k gate dielectric for floating gate memory application

International Nuclear Information System (INIS)

Yuan, C L; Chan, M Y; Lee, P S; Darmawan, P; Setiawan, Y

2007-01-01

The integration of nanoparticles has high potential in technological applications and opens up possibilities of the development of new devices. Compared to the conventional floating gate memory, a structure containing nanocrystals embedded in dielectrics shows high potential to produce a memory with high endurance, low operating voltage, fast write-erase speeds and better immunity to soft errors [S. Tiwari, F. Rana, H. Hanafi et al. 1996 Appl.Phys. Lett. 68, 1377]. A significant improvement on data retention [J. J. Lee, X. Wang et al. 2003 Proceedings of the VLSI Technol. Symposium, p33] can be observed when discrete nanodots are used instead of continuous floating gate as charge storage nodes because local defect related leakage can be reduced efficiently. Furthermore, using a high-k dielectric in place of the conventional SiO2 based dielectric, nanodots flash memory is able to achieve significantly improved programming efficiency and data retention [A. Thean and J. -P. Leburton, 2002 IEEE Potentials 21, 35; D. W. Kim, T. Kim and S. K. Banerjee, 2003 IEEE Trans. Electron Devices 50, 1823]. We have recently successfully developed a method to produce nanodots embedded in high-k gate dielectrics [C. L. Yuan, P. Darmawan, Y. Setiawan and P. S. Lee, 2006 Electrochemical and Solid-State Letters 9, F53; C. L. Yuan, P. Darmawan, Y. Setiawan and P. S. Lee, 2006 Europhys. Lett. 74, 177]. In this paper, we fabricated the memory structure of Al 2 O 3 nanocrystals embedded in amorphous Lu 2 O 3 high k dielectric using pulsed laser ablation. The mean size and density of the Al 2 O 3 nanocrystals are estimated to be about 5 nm and 7x1011 cm -2 , respectively. Good electrical performances in terms of large memory window and good data retention were observed. Our preparation method is simple, fast and economical

Acoustic Phonons and Mechanical Properties of Ultra-Thin Porous Low-k Films: A Surface Brillouin Scattering Study

Science.gov (United States)

Zizka, J.; King, S.; Every, A.; Sooryakumar, R.

2018-04-01

To reduce the RC (resistance-capacitance) time delay of interconnects, a key development of the past 20 years has been the introduction of porous low-k dielectrics to replace the traditional use of SiO2. Moreover, in keeping pace with concomitant reduction in technology nodes, these low-k materials have reached thicknesses below 100 nm wherein the porosity becomes a significant fraction of the film volume. The large degree of porosity not only reduces mechanical strength of the dielectric layer but also renders a need for non-destructive approaches to measure the mechanical properties of such ultra-thin films within device configurations. In this study, surface Brillouin scattering (SBS) is utilized to determine the elastic constants, Poisson's ratio, and Young's modulus of these porous low-k SiOC:H films (˜ 25-250 nm thick) grown on Si substrates by probing surface acoustic phonons and their dispersions.

Effect of crystal structure on strontium titanate thin films and their dielectric properties

Science.gov (United States)

Kampangkeaw, Satreerat

Strontium titanate (SrTiO3 or STO) has application in radio and microwave-frequency tunable capacitor devices particularly at low temperatures due to its high dielectric constant, low loss and the electric field tunability of its dielectric constant. The main goal of improving the performance in these devices is to increase the tunability and decrease the dielectric loss at the same time, especially at microwave frequencies. Thin films of STO however, show dramatic differences compared to the bulk. The dielectric constant of bulk STO increases nonlinearly from 300 at room temperature to 30000 at 4 K and the loss range is 10-3--10 -4. On the other hand. STO thin films, while showing a dielectric constant close to 300 at room temperature, typically reach a maximum between 1000 and 10000 in the 30 K to 100 K range before decreasing, and the high-loss range is 10-2--10-3. We have grown strontium titanate thin films using a pulsed laser deposition technique on substrates selected to have a small lattice mismatch between the film and substrate. Neodymium gallate (NdGaO3 or NGO) and lanthanum aluminate (LaAlO3 or LAO) substrates were good candidates due to only 1--2% mismatching. Film capacitor devices were fabricated with 25 micron gap separation. 1.5 mm total gap length and an overall 1 x 2 mm dimension using standard lithography and gold metal evaporative techniques. Their nonlinear dielectric constant and loss tangent were measured at low frequencies and also at 2 GHz, and from room temperature down to 4 K. The resulting films show significant variations of dielectric properties with position on the substrates with respect to the deposition plume axis. In the presence of DC electric fields up to +/-4 V/mum, STO films show improved dielectric tunability and low loss in regions far from the plume axis. We found that the films grown on NCO have lower dielectric loss than those on LAO due to a closer match of the NCO lattice to that of STO. We investigated the possible

Surface reactions during low-k etching using H2/N2 plasma

International Nuclear Information System (INIS)

Fukasawa, Masanaga; Tatsumi, Tetsuya; Oshima, Keiji; Nagahata, Kazunori; Uchida, Saburo; Takashima, Seigo; Hori, Masaru; Kamide, Yukihiro

2008-01-01

We investigated the relationship between the hard mask faceting that occurs during organic low-k etching and the ion energy distribution function of a capacitively coupled plasma reactor. We minimized the hard mask faceting by precisely controlling the ion energy. This precise control was obtained by selecting the optimum bottom frequency and bias power. We measured the amount of damage done to a SiOCH film exposed to H 2 /N 2 plasma in order to find the H 2 /N 2 ratio at which the plasma caused the least damage. The amount of moisture uptake by the damaged SiOCH film is the dominant factor controlling the dielectric constant increase (Δk). To suppress Δk, the incident ion species and ion energies have to be precisely controlled. This reduces the number of adsorption sites in the bulk SiOCH and maintains the hydrophobic surface that suppresses water permeation during air exposure

Dielectric study of molecular association in the binary mixtures (2-ethyl-1-hexanol + alcohol) and (cyclohexane + alcohol) at 298.2 K

Energy Technology Data Exchange (ETDEWEB)

Ghanadzadeh, A. [Department of Chemistry, Guilan University, Rasht (Iran, Islamic Republic of)]. E-mail: aggilani@guilan.ac.ir; Ghanadzadeh, H. [Department of Chemical Engineering, Guilan University, Rasht (Iran, Islamic Republic of); Sariri, R. [Department of Chemistry, Guilan University, Rasht (Iran, Islamic Republic of); Ebrahimi, L. [Department of Chemistry, Guilan University, Rasht (Iran, Islamic Republic of)

2005-04-15

Experimental results of dielectric investigations of three binary mixtures (ethanol + 2-ethyl-1-hexanol), (n-butanol + 2-ethyl-1-hexanol), and (tert-butanol + 2-ethyl-1-hexanol) were reported for various mole fractions at 298.2 K. The variations of dipole moment and correlation factor, g, with mole fraction in these mixtures were investigated using a unified quasichemical method described by Durov. The molecular associations of (ethanol + cyclohexane), (n-butanol + cyclohexane), and (tert-butanol + cyclohexane) binary mixtures were also investigated using the static dielectric method. A similar trend was observed in the variation of the dipole moments with the solute mole fractions in the both binary systems (i.e., alcohol + 2-ethyl-1-hexanol and alcohol + cyclohexane)

Atomic layer deposition of crystalline SrHfO{sub 3} directly on Ge (001) for high-k dielectric applications

Energy Technology Data Exchange (ETDEWEB)

McDaniel, Martin D.; Ngo, Thong Q.; Ekerdt, John G., E-mail: ekerdt@utexas.edu [Department of Chemical Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States); Hu, Chengqing; Jiang, Aiting; Yu, Edward T. [Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 (United States); Lu, Sirong; Smith, David J. [Department of Physics, Arizona State University, Tempe, Arizona 85287 (United States); Posadas, Agham; Demkov, Alexander A. [Department of Physics, The University of Texas at Austin, Austin, Texas 78712 (United States)

2015-02-07

The current work explores the crystalline perovskite oxide, strontium hafnate, as a potential high-k gate dielectric for Ge-based transistors. SrHfO{sub 3} (SHO) is grown directly on Ge by atomic layer deposition and becomes crystalline with epitaxial registry after post-deposition vacuum annealing at ∼700 °C for 5 min. The 2 × 1 reconstructed, clean Ge (001) surface is a necessary template to achieve crystalline films upon annealing. The SHO films exhibit excellent crystallinity, as shown by x-ray diffraction and transmission electron microscopy. The SHO films have favorable electronic properties for consideration as a high-k gate dielectric on Ge, with satisfactory band offsets (>2 eV), low leakage current (<10{sup −5} A/cm{sup 2} at an applied field of 1 MV/cm) at an equivalent oxide thickness of 1 nm, and a reasonable dielectric constant (k ∼ 18). The interface trap density (D{sub it}) is estimated to be as low as ∼2 × 10{sup 12 }cm{sup −2 }eV{sup −1} under the current growth and anneal conditions. Some interfacial reaction is observed between SHO and Ge at temperatures above ∼650 °C, which may contribute to increased D{sub it} value. This study confirms the potential for crystalline oxides grown directly on Ge by atomic layer deposition for advanced electronic applications.

Interface Study on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using High-k Gate Dielectric Materials

International Nuclear Information System (INIS)

Lin, Y. H.; Chou, J. C.

2015-01-01

We investigated amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFT_s) using different high-Κ gate dielectric materials such as silicon nitride (Si_3N_4) and aluminum oxide (Al_2O_3) at low temperature process (<300 degree) and compared them with low temperature silicon dioxide (SiO_2). The IGZO device with high-Κ gate dielectric material will expect to get high gate capacitance density to induce large amount of channel carrier and generate the higher drive current. In addition, for the integrating process of integrating IGZO device, post annealing treatment is an essential process for completing the process. The chemical reaction of the high-κ/IGZO interface due to heat formation in high-Κ/IGZO materials results in reliability issue. We also used the voltage stress for testing the reliability for the device with different high-Κ gate dielectric materials and explained the interface effect by charge band diagram.

Microstructure and chemical analysis of Hf-based high-k dielectric layers in metal-insulator-metal capacitors

Energy Technology Data Exchange (ETDEWEB)

Thangadurai, P. [Department of Materials Engineering, Technion - Israel Institute of Technology, Haifa 32000 (Israel); Mikhelashvili, V.; Eisenstein, G. [Department of Electrical Engineering, Technion - Israel Institute of Technology, Haifa 32000 (Israel); Kaplan, W.D., E-mail: kaplan@tx.technion.ac.i [Department of Materials Engineering, Technion - Israel Institute of Technology, Haifa 32000 (Israel)

2010-05-31

The microstructure and chemistry of the high-k gate dielectric significantly influences the performance of metal-insulator-metal (MIM) and metal-oxide-semiconductor devices. In particular, the local structure, chemistry, and inter-layer mixing are important phenomena to be understood. In the present study, high resolution and analytical transmission electron microscopy are combined to study the local structure, morphology, and chemistry in MIM capacitors containing a Hf-based high-k dielectric. The gate dielectric, bottom and gate electrodes were deposited on p-type Si(100) wafers by electron beam evaporation. Four chemically distinguishable sub-layers were identified within the dielectric stack. One is an unintentionally formed 4.0 nm thick interfacial layer of Ta{sub 2}O{sub 5} at the interface between the Ta electrode and the dielectric. The other three layers are based on HfN{sub x}O{sub y} and HfTiO{sub y}, and intermixing between the nearby sub-layers including deposited SiO{sub 2}. Hf-rich clusters were found in the HfN{sub x}O{sub y} layer adjacent to the Ta{sub 2}O{sub 5} layer.

Full Polymer Dielectric Elastomeric Actuators (DEA Functionalised with Carbon Nanotubes and High-K Ceramics

Directory of Open Access Journals (Sweden)

Tilo Köckritz

2016-09-01

Full Text Available Dielectric elastomer actuators (DEA are special devices which have a simple working and construction principle and outstanding actuation properties. The DEAs consist of a combination of different materials for the dielectric and electrode layers. The combination of these layers causes incompatibilities in their interconnections. Dramatic differences in the mechanical properties and bad adhesion of the layers are the principal causes for the reduction of the actuation displacement and strong reduction of lifetime. Common DEAs achieve actuation displacements of 2% and a durability of some million cycles. The following investigations represent a new approach to solving the problems of common systems. The investigated DEA consists of only one basic raw polymer, which was modified according to the required demands of each layer. The basic raw polymer was modified with single-walled carbon nanotubes or high-k ceramics, for example, lead magnesium niobate-lead titanate. The development of the full polymer DEA comprised the development of materials and technologies to realise a reproducible layer composition. It was proven that the full polymer actuator worked according to the theoretical rules. The investigated system achieved actuation displacements above 20% regarding thickness, outstanding interconnections at each layer without any failures, and durability above 3 million cycles without any indication of an impending malfunction.

Investigations on perturbations of microwave dielectric resonator thermometer

International Nuclear Information System (INIS)

Yu, Lili; Zhang, Guangming; Fernicola, V; Lu, Jinchuan

2017-01-01

Investigations of antenna probe length, antenna-dielectric distance, cavity filling and humidity on microwave resonator thermometer with respect to Q , spurious mode depression, coupling strength, accuracy, shock resistance or sensitivity were carried out in order to improve the dielectric resonator thermometer performance. Significant improvement of Q and depression of spurious mode coupling were obtained when the antenna length was reduced. It also turns out that the Q and spurious mode coupling strength vary with the distance between dielectric and antenna pin, as well under appropriate antenna length. Filling the cavity with nitrogen increases coupling strength but decrease frequency-temperature sensitivity compared to a vacuum-pumped cavity. Besides, preliminary results on the microwave resonator sensitivity to air humidity were obtained. (technical note)

Dielectric properties of Ga{sub 2}O{sub 3}-doped barium iron niobate ceramics

Energy Technology Data Exchange (ETDEWEB)

Sanjoom, Kachaporn [Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai, 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Sri Ayutthaya Road, Bangkok, 10400 (Thailand); Pengpat, Kamonpan; Eitssayeam, Sukum; Tunkasiri, Tawee [Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai, 50200 (Thailand); Materials Science Research Center, Faculty of Science, Chiang Mai University, Chiang Mai, 50200 (Thailand); Rujijanagul, Gobwute [Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai, 50200 (Thailand); Materials Science Research Center, Faculty of Science, Chiang Mai University, Chiang Mai, 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Sri Ayutthaya Road, Bangkok, 10400 (Thailand)

2014-08-15

Ga-doped BaFe{sub 0.5}Nb{sub 0.5}O{sub 3} (Ba(Fe{sub 1-x}Ga{sub x}){sub 0.5}Nb{sub 0.5}O{sub 3}) ceramics were fabricated and their properties were investigated. All ceramics showed perovskite structure with cubic symmetry and the solubility of Ga in BFN ceramics had a limit at x = 0.2. Examination of the dielectric spectra indicated that all ceramic samples presented high dielectric constants that were frequency dependent. The x = 0.2 ceramic showed a very high dielectric constant (ε{sub r} > 240 000 at 1 kHz) while the x = 0.4 sample exhibited high thermal stability of dielectric constant with low loss tangent from room temperature (RT) to 100 C with ε{sub r} > 28 000 (at 1 kHz) when compared to other samples. By using a complex impedance analysis technique, bulk grain, grain boundary, and electrode response were found to affect the dielectric behavior that could be related to the Maxwell-Wagner polarization mechanism. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Peculiarities of low-frequency dielectric spectra and domain wall motion in gadolinium molybdate

International Nuclear Information System (INIS)

Galiyarova, N.M.; Gorin, S.V.; Dontsova, L.I.; Shil'nikov, A.V.; Shuvalov, L.A.

1994-01-01

Low-frequency Debye dispersion of dielectric permeability in GMO with the low values of high-frequency limit ε ∞ was investigated in a wide temperature range as well as in fields of variable amplitude. The features of domain boundaries motion were studied at the partial repolarization in monopolar P-pulsed fields. The model of cooperationrelaxation motion brifing in parallel with positive to negative contribution to polarization that explained the low values of ε ∞ was suggested

Dielectric studies of Graphene and Glass Fiber reinforced composites

Science.gov (United States)

Praveen, D.; Shashi Kumar, M. E.; Pramod, R.

2018-02-01

Graphene and E-glass fibres are one of the key materials used currently due to their unique chemical and mechanical properties. Lately graphene has attracted many researchers across academic fraternity as it can yield better properties with lesser reinforcement percentages. The current research emphasizes on the development of graphene-based nanocomposites and its investigation on dielectric applications. The composites were fabricated by adding graphene reinforcements from 1%-3% by weight using conventional Hand-lay process. A thorough investigation was carried out to determine the dielectric behaviour of the nano-composites using impedance analyser according to ASTM standards. The dielectric measurements were carried out in the temperature range of 300K to 400K in a step of 20K. The current research proposes the material for application in capacitor industry as the sample of 2.5% weight fraction showed highest value of K with 14 at 26.1 Hz and 403K.

Electrical breakdown phenomena of dielectric elastomers

DEFF Research Database (Denmark)

Mateiu, Ramona Valentina; Yu, Liyun; Skov, Anne Ladegaard

2017-01-01

Silicone elastomers have been heavily investigated as candidates for dielectric elastomers and are as such almost ideal candidates with their inherent softness and compliance but they suffer from low dielectric permittivity. This shortcoming has been sought optimized by many means during recent...... years. However, optimization with respect to the dielectric permittivity solely may lead to other problematic phenomena such as premature electrical breakdown. In this work, we investigate the electrical breakdown phenomena of various types of permittivity-enhanced silicone elastomers. Two types...... of silicone elastomers are investigated and different types of breakdown are discussed. Furthermore the use of voltage stabilizers in silicone-based dielectric elastomers is investigated and discussed....

Fabrication of Nonvolatile Memory Effects in High-k Dielectric Thin Films Using Electron Irradiation

International Nuclear Information System (INIS)

Park, Chanrock; Cho, Daehee; Kim, Jeongeun; Hwang, Jinha

2010-01-01

Electron Irradiation can be applied towards nano-floating gate memories which are recognized as one of the next-generation nonvolatile memory semiconductors. NFGMs can overcome the preexisting limitations encountered in Dynamic Random Access Memories and Flash memories with the excellent advantages, i. e. high-density information storage, high response speed, high compactness, etc. The traditional nano-floating gate memories are fabricated through multi-layered nano structures of the dissimilar materials where the charge-trapping portions are sandwiched into the high-k dielectrics. However, this work reports the unique nonvolatile responses in single-layered high-k dielectric thin films if irradiated with highly accelerated electron beams. The implications of the electron irradiation will be discussed towards high-performance nano-floating gate memories

Off Axis Growth of Strontium Titanate Films with High Dielectric Constant Tuning and Low Loss

Science.gov (United States)

Kampangkeaw, Satreerat

2002-03-01

Using off-axis pulsed laser deposition, we have grown strontium titanate (STO) films on neodymium gallate (NGO) and lanthanum aluminate (LAO) substrates. We measured the film dielectric constant and loss tangent as a function of temperature in the 10kHz to 1 MHz frequency range. We found that the loss is less than 0.01 We also obtained a figure of merit from the relative variation of the dielectric constant divided by the loss tangent. The obtained figured of merit at 35K and 1MHz is about 1000 comparable to bulk values. The dielectric constant of these films can be changed by a factor of 4-8 in the presence of a DC electric field up to 5V/μm. The films show significant variations of dielectric properties grown on different substrates at different locations respect to the axis of the plume. The STO films on LAO having high dielectric constant and dielectric tuning were grown in region near the center of the plume. On the other hand, STO on NGO shows this effect only on the films grown far from the plume axis.

Dielectric and piezoelectric characteristics of lead-free Bi{sub 0.5}(Na{sub 0.84}K{sub 0.16}){sub 0.5}TiO{sub 3} ceramics substituted with Sr

Energy Technology Data Exchange (ETDEWEB)

Yoo, Juhyun [Department of Electrical Engineering, Semyung University Jechon, Chungbuk, 390-711 (Korea, Republic of); Oh, Dongon [Sunny Electronics Corporation, Chungju, 380-240 (Korea, Republic of); Jeong, Yeongho [Korea Electric Power Research Institute, Yusung-Gu, Taejon 305-380 (Korea, Republic of); Hong, Jaeil [Department of Electricity, Dongseoul Tech. Jr. College, 255 Soo Jung-Ku, Sung Nam (Korea, Republic of); Jung, Moonyoung [Department of Earth Resources and Environmental Geotechnics Engineering, Semyung University Jechon, Chungbuk, 390-711 (Korea, Republic of)

2004-11-01

In this study, lead-free Bi{sub 0.5}(Na{sub 0.84}K{sub 0.16}){sub 0.5}TiO{sub 3} ceramics were fabricated with the variations of Sr substitution and their dielectric and piezoelectric characteristics were investigated. Through the analysis of XRD diffraction pattern and SEM, crystal structure and microstructure were evaluated. With the increasing amount of Sr substitution, dielectric constant linearly increased at the rate of about 90 per 1 mol% and Curie temperature decreased slightly. Also, the temperature dependence curve of dielectric constant moved leftward. At 4 mol% Sr substitution, T{sub c} of 292C, k{sub p} of 34.3%, k{sub t} of 45.32%, and d{sub 33} of 185 pC/N were obtained, respectively.

Investigation of radiative charging of dielectrics irradiated by ions

International Nuclear Information System (INIS)

Dergobuzov, K.A.; Yalovets, A.P.

1994-01-01

Within the framework of the Gusel'nikov mathematical model are fulflled numerical investigations of charging dielectrics irradiated with ions and atoms. The model accounts for dynamics of quasi-free charge carriers of each sign with account of processes of dielectrics ionization with a beam, charge recombination and charge drift in an electric fields. The effective mobility of charge carriers is determined with account for its dependence on the dose rate

Investigation via numerical simulation of limiting currents in the presence of dielectric loads

International Nuclear Information System (INIS)

Baedke, W. C.

2009-01-01

An investigation of the space-charge-limited currents for unneutralized relativistic particle beams drifting through a dielectrically loaded cylindrical conductor is presented. The first limiting current expression investigated assumes a uniform axial velocity profile, is commonly found in the literature, and has been applied to solid and annular beams with and without a dielectric present. The second limiting current expression investigated is self-consistent and is developed for annular beams in the presence of a dielectric load provided that the beams' inner and outer radii are less than the dielectric inner radius. Comparing both of these expressions to particle-in-cell simulations shows that the first expression under predicts the limiting current by no more than 20% and no less than 10% for all geometries and relativistic mass factors considered. It is also shown that the second expression over predicts the limiting current for all scenarios investigated by as much as 20% and in certain cases only a few percent. In addition, estimates for the accumulated charge densities at the vacuum-dielectric interface are presented and the possibility of breakdown within the dielectric is addressed.

Wet etching characteristics of a HfSiON high-k dielectric in HF-based solutions

International Nuclear Information System (INIS)

Li Yongliang; Xu Qiuxia

2010-01-01

The wet etching properties of a HfSiON high-k dielectric in HF-based solutions are investigated. HF-based solutions are the most promising wet chemistries for the removal of HfSiON, and etch selectivity of HF-based solutions can be improved by the addition of an acid and/or an alcohol to the HF solution. Due to densification during annealing, the etch rate of HfSiON annealed at 900 0 C for 30 s is significantly reduced compared with as-deposited HfSiON in HF-based solutions. After the HfSiON film has been completely removed by HF-based solutions, it is not possible to etch the interfacial layer and the etched surface does not have a hydrophobic nature, since N diffuses to the interface layer or Si substrate formation of Si-N bonds that dissolves very slowly in HF-based solutions. Existing Si-N bonds at the interface between the new high-k dielectric deposit and the Si substrate may degrade the carrier mobility due to Coulomb scattering. In addition, we show that N 2 plasma treatment before wet etching is not very effective in increasing the wet etch rate for a thin HfSiON film in our case. (semiconductor technology)

Equivalent circuit modeling of the dielectric properties of rubber wood at low frequency

Science.gov (United States)

Wan M. Daud; Kaida B. Khalid; Aziz H.A. Sidek

2000-01-01

Dielectric properties of rubber wood were studied at various moisture contents and grain directions at low frequencies from 10-2 to 105 Hz. Results showed that the moisture content of wood affected the dielectric properties considerably. Dielectric data at different anisotropic directions, i.e., longitudinal, radial, and...

Dielectric nanoresonators for light manipulation

Science.gov (United States)

Yang, Zhong-Jian; Jiang, Ruibin; Zhuo, Xiaolu; Xie, Ya-Ming; Wang, Jianfang; Lin, Hai-Qing

2017-07-01

Nanostructures made of dielectric materials with high or moderate refractive indexes can support strong electric and magnetic resonances in the optical region. They can therefore function as nanoresonators. In addition to plasmonic metal nanostructures that have been widely investigated, dielectric nanoresonators provide a new type of building blocks for realizing powerful and versatile nanoscale light manipulation. In contrast to plasmonic metal nanostructures, nanoresonators made of appropriate dielectric materials are low-cost, earth-abundant and have very small or even negligible light energy losses. As a result, they will find potential applications in a number of photonic devices, especially those that require low energy losses. In this review, we describe the recent progress on the experimental and theoretical studies of dielectric nanoresonators. We start from the basic theory of the electromagnetic responses of dielectric nanoresonators and their fabrication methods. The optical properties of individual dielectric nanoresonators are then elaborated, followed by the coupling behaviors between dielectric nanoresonators, between dielectric nanoresonators and substrates, and between dielectric nanoresonators and plasmonic metal nanostructures. The applications of dielectric nanoresonators are further described. Finally, the challenges and opportunities in this field are discussed.

Structure and performance of dielectric films based on self-assembled nanocrystals with a high dielectric constant.

Science.gov (United States)

Huang, Limin; Liu, Shuangyi; Van Tassell, Barry J; Liu, Xiaohua; Byro, Andrew; Zhang, Henan; Leland, Eli S; Akins, Daniel L; Steingart, Daniel A; Li, Jackie; O'Brien, Stephen

2013-10-18

Self-assembled films built from nanoparticles with a high dielectric constant are attractive as a foundation for new dielectric media with increased efficiency and range of operation, due to the ability to exploit nanofabrication techniques and emergent electrical properties originating from the nanoscale. However, because the building block is a discrete one-dimensional unit, it becomes a challenge to capture potential enhancements in dielectric performance in two or three dimensions, frequently due to surface effects or the presence of discontinuities. This is a recurring theme in nanoparticle film technology when applied to the realm of thin film semiconductor and device electronics. We present the use of chemically synthesized (Ba,Sr)TiO3 nanocrystals, and a novel deposition-polymerization technique, as a means to fabricate the dielectric layer. The effective dielectric constant of the film is tunable according to nanoparticle size, and effective film dielectric constants of up to 34 are enabled. Wide area and multilayer dielectrics of up to 8 cm(2) and 190 nF are reported, for which the building block is an 8 nm nanocrystal. We describe models for assessing dielectric performance, and distinct methods for improving the dielectric constant of a nanocrystal thin film. The approach relies on evaporatively driven assembly of perovskite nanocrystals with uniform size distributions in a tunable 7-30 nm size range, coupled with the use of low molecular weight monomer/polymer precursor chemistry that can infiltrate the porous nanocrystal thin film network post assembly. The intercrystal void space (low k dielectric volume fraction) is minimized, while simultaneously promoting intercrystal connectivity and maximizing volume fraction of the high k dielectric component. Furfuryl alcohol, which has good affinity to the surface of (Ba,Sr)TiO3 nanocrystals and miscibility with a range of solvents, is demonstrated to be ideal for the production of nanocomposites. The

Polyhedral oligomeric silsequioxane monolayer as a nanoporous interlayer for preparation of low-k dielectric films

International Nuclear Information System (INIS)

Liu, Y-L; Liu, C-S; Cho, C-I; Hwu, M-J

2007-01-01

Polyhedral oligomeric silsequioxane (POSS) monomer was fixed to a silicon surface by reacting octakis(glycidyldimethylsiloxy)octasilsesquioxane (OG-POSS) with the OH-terminated silicon surface in the presence of tin (II) chloride. The POSS cage layer then served as a nanoporous interlayer to reduce the dielectric constants of polyimide films on silicon surfaces. The chemical structure and surface morphology of OG-POSS modified silicon surfaces were characterized with XPS. With the introduction of a POSS nanopored interlayer, the dielectric constants of polyimide films were reduced

Ozone production in a dielectric barrier discharge with ultrasonic irradiation

DEFF Research Database (Denmark)

Drews, Joanna Maria; Kusano, Yukihiro; Leipold, Frank

2011-01-01

Ozone production has been investigated using an atmospheric pressure dielectric barrier discharge in pure O2 at room temperature with and without ultrasonic irradiation. It was driven at a frequency of either 15 kHz or 40 kHz. The ozone production was highly dependent on the O2 flow rate and the ......Ozone production has been investigated using an atmospheric pressure dielectric barrier discharge in pure O2 at room temperature with and without ultrasonic irradiation. It was driven at a frequency of either 15 kHz or 40 kHz. The ozone production was highly dependent on the O2 flow rate...

Sol-gel-derived mesoporous silica films with low dielectric constants

Energy Technology Data Exchange (ETDEWEB)

Seraji, S.; Wu, Yun; Forbess, M.; Limmer, S.J.; Chou, T.; Cao, Guozhong [Washington Univ., Seattle, WA (United States). Dept. of Materials Science and Engineering

2000-11-16

Mesoporous silica films with low dielectric constants and possibly closed pores have been achieved with a multiple step sol-gel processing technique. Crack-free films with approximately 50% porosity and 0.9 {mu}m thicknesses were obtained, a tape-test revealing good adhesion between films and substrates or metal electrodes. Dielectric constants remained virtually unchanged after aging at room temperature at 56% humidity over 6 days. (orig.)

Dielectric properties in the vicinity of the ferroelectric phase transition in a mixed crystal of deuterated betaine phosphate{sub 0.03} betaine phosphite{sub 0.97}

Energy Technology Data Exchange (ETDEWEB)

Banys, J.; Macutkevic, J.; Kajokas, A.; Brilingas, A.; Grigas, J. [Faculty of Physics, Vilnius University, Sauletekio 9, Vilnius 2040 (Lithuania); Klimm, C.; Voelkel, G. [Fakultaet fuer Physik und Geowissenschaften, Universitaet Leipzig, Linnestr. 5, 04103 Leipzig (Germany)

2004-02-01

The dielectric behaviour of ferroelectric hydrogen bonded deuterated betaine phosphate{sub 0.03} betaine phosphite{sub 0.97} (DBP{sub 0.03}DBPI{sub 0.97})is investigated in the region of the ferroelectric phase transition. Dielectric dispersion is investigated in the frequency range up to 12 GHz. The dielectric dynamics shows a critical slowing down. The frequency of the relaxational soft mode in the paraelectric phase varies according to the quasi-one-dimensional Ising model and decreases up to 0.31 GHz at the phase transition temperature (T{sub C}=272 K). The obtained activation energy for the deuteron flipping motion {delta}U=2.3kT{sub C}=0.054 eV shows the order-disorder character of the ferroelectric phase transition. The spontaneous polarisation, obtained from pyroelectric measurements, is also well explained using the quasi-one-dimensional Ising model. At low temperatures, the freezing phenomena in DBP{sub 0.03}DBPI{sub 0.97} revealed the complex dielectric permittivity behaviour characteristic for the transition into the dipolar glass state. The activation energy of this low temperature process was found to be E{sub b}=1297 K (0.041 eV) and the glass temperature was estimated to 73 K. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Applicability of point-dipoles approximation to all-dielectric metamaterials

DEFF Research Database (Denmark)

Kuznetsova, S. M.; Andryieuski, Andrei; Lavrinenko, Andrei

2015-01-01

All-dielectric metamaterials consisting of high-dielectric inclusions in a low-dielectric matrix are considered as a low-loss alternative to resonant metal-based metamaterials. In this paper we investigate the applicability of the point electric and magnetic dipoles approximation to dielectric meta......-atoms on the example of a dielectric ring metamaterial. Despite the large electrical size of high-dielectric meta-atoms, the dipole approximation allows for accurate prediction of the metamaterials properties for the rings with diameters up to approximate to 0.8 of the lattice constant. The results provide important...... guidelines for design and optimization of all-dielectric metamaterials....

Low operating voltage n-channel organic field effect transistors using lithium fluoride/PMMA bilayer gate dielectric

Energy Technology Data Exchange (ETDEWEB)

Kumar, S.; Dhar, A., E-mail: adhar@phy.iitkgp.ernet.in

2015-10-15

Highlights: • Alternative to chemically crosslinking of PMMA to achieve low leakage in provided. • Effect of LiF in reducing gate leakage through the OFET device is studied. • Effect of gate leakage on transistor performance has been investigated. • Low voltage operable and low temperature processed n-channel OFETs were fabricated. - Abstract: We report low temperature processed, low voltage operable n-channel organic field effect transistors (OFETs) using N,N′-Dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C{sub 8}) organic semiconductor and poly(methylmethacrylate) (PMMA)/lithium fluoride (LiF) bilayer gate dielectric. We have studied the role of LiF buffer dielectric in effectively reducing the gate leakage through the device and thus obtaining superior performance in contrast to the single layer PMMA dielectric devices. The bilayer OFET devices had a low threshold voltage (V{sub t}) of the order of 5.3 V. The typical values of saturation electron mobility (μ{sub s}), on/off ratio and inverse sub-threshold slope (S) for the range of devices made were estimated to be 2.8 × 10{sup −3} cm{sup 2}/V s, 385, and 3.8 V/decade respectively. Our work thus provides a potential substitution for much complicated process of chemically crosslinking PMMA to achieve low leakage, high capacitance, and thus low operating voltage OFETs.

Dielectric and piezoelectric properties of sol-gel derived Ca doped PbTiO3

International Nuclear Information System (INIS)

Chauhan, Arun Kumar Singh; Gupta, Vinay; Sreenivas, K.

2006-01-01

Synthesis of Ca doped PbTiO 3 powder by a chemically derived sol-gel process is described. Crystallization characteristics of different compositions Pb 1-x Ca x TiO 3 (PCT) with varying calcium (Ca) content in the range x = 0-0.45 has been investigated by DTA/TGA, X-ray diffraction and scanning electron microscopy. The crystallization temperature is found to decrease with increasing calcium content. X-ray diffraction reveals a tetragonal structure for PCT compositions with x ≤ 0.35, and a cubic structure for x = 0.45. Dielectric properties on sintered ceramics prepared with fine sol-gel derived powders have been measured. The dielectric constant is found to increase with increasing Ca content, and the dielectric loss decreases continuously. Sol-gel derived Pb 1-x Ca x TiO 3 ceramics with x = 0.45 after poling exhibit infinite electromechanical anisotropy (k t /k p ) with a high d 33 = 80 pC/N, ε' = 298 and low dielectric loss (tan δ = 0.0041)

Preliminary Investigation of a Dielectric Barrier Discharge Lamp in Open Air at Atmospheric Pressure

International Nuclear Information System (INIS)

Liu Feng; Wang Wei-Wei; Chang Xi-Jiang; Liang Rong-Qing

2011-01-01

A dielectric barrier discharge (DBD) lamp is investigated by using sinusoidal power with a 10 kHz frequency in open air at atmospheric pressure. With increasing applied voltages, the different discharge phenomena appear. At relatively low voltages, the discharge states are general stochastic filamentary discharges with weak light. However, at relatively high voltages, the walls of quartz tubes are heated sharply by plasma, and then the dazzling light is emitted very quickly to form the DBD Lamp, corresponding to the low maintaining voltage that is lower than the ignited voltage. The discharge state or mode of the DBD lamp that corresponds to the glow discharge is deduced according to the wave form of the circuit current, which is evidently different from the filamentary discharges. Under these conditions, the spectrum of the DBD lamp is continuous in the range 400–932 nm, which is scanned in the range 300–932 nm. It is also shown that there is another discharge state or mode that is different from the traditional filamentary discharges. Therefore, it is concluded that the discharge state or mode of the DBD lamp is a glow discharge. (physics of gases, plasmas, and electric discharges)

Transfer-Free Fabrication of Graphene Scaffolds on High-k Dielectrics from Metal-Organic Oligomers.

Science.gov (United States)

Pang, Qingqing; Wang, Deyan; Wang, Xiuyan; Feng, Shaoguang; Clark, Michael B; Li, Qiaowei

2016-09-28

In situ fabrication of graphene scaffold-ZrO2 nanofilms is achieved by thermal annealing of Zr-based metal-organic oligomers on SiO2 substrates. The structural similarities of the aromatic moieties in the ligand (phenyl-, naphthyl-, anthryl-, and pyrenyl-) compared to graphene play a major role in the ordering of the graphene scaffolds obtained. The depth profiling analysis reveals ultrathin carbon-pure or carbon-rich surfaces of the graphene scaffold-ZrO2 nanofilms. The graphene scaffolds with ∼96.0% transmittance in the visible region and 4.8 nm in thickness can be grown with this non-chemical vapor deposition method. Furthermore, the heterogeneous graphene scaffold-ZrO2 nanofilms show a low sheet resistance of 17.0 kΩ per square, corresponding to electrical conductivity of 3197 S m(-1). The strategy provides a facile method to fabricate graphene scaffolds directly on high-k dielectrics without transferring process, paving the way for its application in fabricating electronic devices.

Improved integration of ultra-thin high-k dielectrics in few-layer MoS2 FET by remote forming gas plasma pretreatment

Science.gov (United States)

Wang, Xiao; Zhang, Tian-Bao; Yang, Wen; Zhu, Hao; Chen, Lin; Sun, Qing-Qing; Zhang, David Wei

2017-01-01

The effective and high-quality integration of high-k dielectrics on two-dimensional (2D) crystals is essential to the device structure engineering and performance improvement of field-effect transistor (FET) based on the 2D semiconductors. We report a 2D MoS2 transistor with ultra-thin Al2O3 top-gate dielectric (6.1 nm) and extremely low leakage current. Remote forming gas plasma pretreatment was carried out prior to the atomic layer deposition, providing nucleation sites with the physically adsorbed ions on the MoS2 surface. The top gate MoS2 FET exhibited excellent electrical performance, including high on/off current ratio over 109, subthreshold swing of 85 mV/decade and field-effect mobility of 45.03 cm2/V s. Top gate leakage current less than 0.08 pA/μm2 at 4 MV/cm has been obtained, which is the smallest compared with the reported top-gated MoS2 transistors. Such an optimized integration of high-k dielectric in 2D semiconductor FET with enhanced performance is very attractive, and it paves the way towards the realization of more advanced 2D nanoelectronic devices and integrated circuits.

Hydrostatic pressure effects on the dielectric response of potassium cyanide

International Nuclear Information System (INIS)

Ortiz Lopez, J.

1992-01-01

The complex dielectric constant of crystalline KCN was measured under hydrostatic pressures up to 6.1 kbar in the temperature and frequency ranges of 50-300 K and 10-10 5 Hz, respectively. It is found that the pressure derivative of the real part of the dielectric constant at all measured temperatures is negative. From these results we obtain estimates for the pressure and volume derivatives of polarizabilities. The anomaly in the real part of the dielectric constant at the elastic order-disorder transition shifts to higher temperatures with increasing pressure at a rate of 2.05 K/kbar. By carefully avoiding thermal cycling through this transition we find no evidence of the monoclinic phase reported to exist in the P-T phase diagram of KCN at relatively low pressures. Dielectric loss measurements show thermally-activated CN - reorientation rates in the elastically ordered phase with pressure-independent reorientational barriers and decreasing attempt frequencies for increasing pressures. Additional pressure effects on dielectric loss allow to obtain the pressure derivative of the antiferroelectric transition temperature as 1.97 K/kbar. (Author)

Dielectric Properties of Cd1-xZnxSe Thin Film Semiconductors

International Nuclear Information System (INIS)

Wahab, L.A.; Farrag, A.A.; Zayed, H.A.

2012-01-01

Cd 1-x Zn x Se (x=0, 0.5 and 1) thin films of thickness 300 nm have been deposited on highly cleaned glass substrates (Soda-lime glass) by thermal evaporation technique under pressure 10-5 Torr. The crystal structure, lattice parameters and grain size were determined from X-ray diffraction patterns of these films. The dielectric response and ac conductivity of the films are investigated in the frequency range from 80 Hz to 5 MHz and temperature range from 300 K to 420 K. AC conductivity increases linearly with the frequency according to the power relation σ a c (ψ)=A (ψ) s . The dielectric constant and loss show low values at high frequencies. The relaxation time t, resistance R and capacitance C were calculated from Nyquist diagram. The behavior can be modeled by an equivalent parallel RC circuit.

Controlling Chain Conformations of High-k Fluoropolymer Dielectrics to Enhance Charge Mobilities in Rubrene Single-Crystal Field-Effect Transistors.

Science.gov (United States)

Adhikari, Jwala M; Gadinski, Matthew R; Li, Qi; Sun, Kaige G; Reyes-Martinez, Marcos A; Iagodkine, Elissei; Briseno, Alejandro L; Jackson, Thomas N; Wang, Qing; Gomez, Enrique D

2016-12-01

A novel photopatternable high-k fluoropolymer, poly(vinylidene fluoride-bromotrifluoroethylene) P(VDF-BTFE), with a dielectric constant (k) between 8 and 11 is demonstrated in thin-film transistors. Crosslinking P(VDF-BTFE) reduces energetic disorder at the dielectric-semiconductor interface by controlling the chain conformations of P(VDF-BTFE), thereby leading to approximately a threefold enhancement in the charge mobility of rubrene single-crystal field-effect transistors. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Ceramic-polymer nanocomposites with increased dielectric permittivity and low dielectric loss

International Nuclear Information System (INIS)

Bhardwaj, Sumit; Paul, Joginder; Raina, K. K.; Thakur, N. S.; Kumar, Ravi

2014-01-01

The use of lead free materials in device fabrication is very essential from environmental point of view. We have synthesized the lead free ferroelectric polymer nanocomposite films with increased dielectric properties. Lead free bismuth titanate has been used as active ceramic nanofillers having crystallite size 24nm and PVDF as the polymer matrix. Ferroelectric β-phase of the polymer composite films was confirmed by X-ray diffraction pattern. Mapping data confirms the homogeneous dispersion of ceramic particles into the polymer matrix. Frequency dependent dielectric constant increases up to 43.4 at 100Hz, whereas dielectric loss decreases with 7 wt% bismuth titanate loading. This high dielectric constant lead free ferroelectric polymer films can be used for energy density applications

Dielectric and piezoelectric properties of sol-gel derived Ca doped PbTiO{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Chauhan, Arun Kumar Singh [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Gupta, Vinay [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India)]. E-mail: drvin_gupta@rediffmail.com; Sreenivas, K. [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India)

2006-06-15

Synthesis of Ca doped PbTiO{sub 3} powder by a chemically derived sol-gel process is described. Crystallization characteristics of different compositions Pb{sub 1-x}Ca {sub x}TiO{sub 3} (PCT) with varying calcium (Ca) content in the range x = 0-0.45 has been investigated by DTA/TGA, X-ray diffraction and scanning electron microscopy. The crystallization temperature is found to decrease with increasing calcium content. X-ray diffraction reveals a tetragonal structure for PCT compositions with x {<=} 0.35, and a cubic structure for x = 0.45. Dielectric properties on sintered ceramics prepared with fine sol-gel derived powders have been measured. The dielectric constant is found to increase with increasing Ca content, and the dielectric loss decreases continuously. Sol-gel derived Pb{sub 1-x}Ca {sub x}TiO{sub 3} ceramics with x = 0.45 after poling exhibit infinite electromechanical anisotropy (k {sub t}/k {sub p}) with a high d {sub 33} = 80 pC/N, {epsilon}' = 298 and low dielectric loss (tan {delta} = 0.0041)

Investigation of SiO2 thin films dielectric constant using ellipsometry technique

Directory of Open Access Journals (Sweden)

P Sangpour

2014-11-01

Full Text Available In this paper, we studied the optical behavior of SiO2 thin films prepared via sol-gel route using spin coating deposition from tetraethylorthosilicate (TEOS as precursor. Thin films were annealed at different temperatures (400-600oC. Absorption edge and band gap of thin layers were measured using UV-Vis spectrophotometery. Optical refractive index and dielectric constant were measured by ellipsometry technique. Based on our atomic force microscopic (AFM and ellipsometry results, thin layers prepared through this method showed high surface area, and high porosity ranging between 4.9 and 16.9, low density 2 g/cm, and low dielectric constant. The dielectric constant and porosity of layers increased by increasing the temperature due to the changes in surface roughness and particle size.

Low frequency alternating current conduction and dielectric relaxation in polypyrrole irradiated with 100 MeV swift heavy ions of silver (Ag8+)

International Nuclear Information System (INIS)

Kaur, Amarjeet; Dhillon, Anju; Avasthi, D.K.

2013-01-01

Polypyrrole (PPY) films were prepared by electrochemical polymerization technique. The fully undoped samples were irradiated with different radiation fluences ranging from 10 10 to 10 12 ions cm −2 of 100 MeV silver (Ag 8+ ) ions. The temperature dependence of ac conductivity [σ m (ω)], dielectric constant (ε′) and dielectric loss (ε′′) of both irradiated as well as unirradiated samples have been investigated in 77–300 K. There exists typical Debye type dispersion. Giant increase in dielectric constant has been observed for irradiated samples which is attributed to polaronic defects produced during irradiation. - Graphical abstract: Display Omitted - Highlights: • Polypyrrole samples were prepared by electrochemical technique. • The fully undoped samples were irradiated with 100 MeV silver (Ag 8+ ) ions. • Giant increase in dielectric constant in irradiated samples is observed. • Dielectric behaviour is attributed to polaronic defects produced during irradiation

Dielectric properties of gadolinium molybdate in low- and infralow frequency electric fields

International Nuclear Information System (INIS)

Galiyarova, N.M.; Gorin, S.V.; Dontsova, L.I.; Shil'nikov, A.V.; Shuvalov, L.A.; AN SSSR, Moscow

1992-01-01

Temperature dependences of complex dielectric permittivity of gadolinium molybdate (GMO) in low- (LF) and infralow-frequency (ILF) electric fields with 0.1 V·cm -1 amplitude within 0.25-10 4 Hz frequency range are studied. Substantial effect of the crystal prehistory on LF and ILF dielectric properties and domain structure state is revealed. An anomalous reduction of complex dielectric permittivity accompanied by the occurrence of the Debye LF-dispersion of permittivity is detected under the sample cooling from a nonpolar phase

Characterization of ultraviolet light cured polydimethylsiloxane films for low-voltage, dielectric elastomer actuators

Science.gov (United States)

Töpper, Tino; Wohlfender, Fabian; Weiss, Florian; Osmani, Bekim; Müller, Bert

2016-04-01

The reduction the operation voltage has been the key challenge to realize of dielectric elastomer actuators (DEA) for many years - especially for the application fields of robotics, lens systems, haptics and future medical implants. Contrary to the approach of manipulating the dielectric properties of the electrically activated polymer (EAP), we intend to realize low-voltage operation by reducing the polymer thickness to the range of a few hundred nanometers. A study recently published presents molecular beam deposition to reliably grow nanometer-thick polydimethylsiloxane (PDMS) films. The curing of PDMS is realized using ultraviolet (UV) radiation with wavelengths from 180 to 400 nm radicalizing the functional side and end groups. The understanding of the mechanical properties of sub-micrometer-thin PDMS films is crucial to optimize DEAs actuation efficiency. The elastic modulus of UV-cured spin-coated films is measured by nano-indentation using an atomic force microscope (AFM) according to the Hertzian contact mechanics model. These investigations show a reduced elastic modulus with increased indentation depth. A model with a skin-like SiO2 surface with corresponding elastic modulus of (2.29 +/- 0.31) MPa and a bulk modulus of cross-linked PDMS with corresponding elastic modulus of (87 +/- 7) kPa is proposed. The surface morphology is observed with AFM and 3D laser microscopy. Wrinkled surface microstructures on UV-cured PDMS films occur for film thicknesses above (510 +/- 30) nm with an UV-irradiation density of 7.2 10-4 J cm-2 nm-1 at a wavelength of 190 nm.

Combination of laser correlation and dielectric spectroscopy in albumin investigations

International Nuclear Information System (INIS)

Nepomnyashchaya, E; Cheremiskina, A; Velichko, E; Aksenov, E; Bogomaz, T

2015-01-01

Joint use of laser correlation and dielectric spectroscopies for studies of biomolecular properties of albumin in water solution is considered. The conditions and parameters of the experiments are discussed. Similar behaviours of albumin molecular sizes and maximum frequency of peak of dielectric dissipation factor with increasing acidity were revealed. Using the suggested approach, biomolecular aggregation dynamics and changes in electrophysical properties on transition from one molecular structure to another may be investigated. (paper)

Processing of Al2O3/SrTiO3/PDMS Composites With Low Dielectric Loss

Science.gov (United States)

Yao, J. L.; Guo, M. J.; Qi, Y. B.; Zhu, H. X.; Yi, R. Y.; Gao, L.

2018-05-01

Polydimethylsiloxane (PDMS) is widely used in the electrical and electronic industries due to its excellent electrical insulation and biocompatible characteristics. However, the dielectric constant of pure PDMS is very low which restricts its applications. Herein, we report a series of PDMS/Al2O3/strontium titanate (ST) composites with high dielectric constant and low loss prepared by a simple experimental method. The composites exhibit high dielectric constant (relative dielectric constant is 4) after the composites are coated with insulated Al2O3 particles, and the dielectric constant gets further improved for composites with ST particles (dielectric constant reaches 15.5); a lower dielectric loss (tanδ= 0.05) is also found at the same time which makes co-filler composites suitable for electrical insulation products, and makes the experimental method more interesting in modern teaching.

Low operating voltage InGaZnO thin-film transistors based on Al2O3 high-k dielectrics fabricated using pulsed laser deposition

International Nuclear Information System (INIS)

Geng, G. Z.; Liu, G. X.; Zhang, Q.; Shan, F. K.; Lee, W. J.; Shin, B. C.; Cho, C. R.

2014-01-01

Low-voltage-driven amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) with an Al 2 O 3 dielectric were fabricated on a Si substrate by using pulsed laser deposition. Both Al 2 O 3 and IGZO thin films are amorphous, and the thin films have very smooth surfaces. The Al 2 O 3 gate dielectric exhibits a very low leakage current density of 1.3 x 10 -8 A/cm 2 at 5 V and a high capacitance density of 60.9 nF/cm 2 . The IGZO TFT with a structure of Ni/IGZO/Al 2 O 3 /Si exhibits high performance with a low threshold voltage of 1.18 V, a high field effect mobility of 20.25 cm 2 V -1 s -1 , an ultra small subthreshold swing of 87 mV/decade, and a high on/off current ratio of 3 x 10 7 .

A room temperature cured low dielectric hyperbranched epoxy ...

Indian Academy of Sciences (India)

carbon chain in its structure.2 In the present study, a .... The degree of branching, epoxy equivalent and hydroxyl value ... The physical properties and swelling value of the hardener were ... samples were studied by thermogravimetric analysis. (TGA) in ..... Nalwa H S 1999 Handbook of low and high dielectric constant ...

Electrical Properties of Ultrathin Hf-Ti-O Higher k Gate Dielectric Films and Their Application in ETSOI MOSFET.

Science.gov (United States)

Xiong, Yuhua; Chen, Xiaoqiang; Wei, Feng; Du, Jun; Zhao, Hongbin; Tang, Zhaoyun; Tang, Bo; Wang, Wenwu; Yan, Jiang

2016-12-01

Ultrathin Hf-Ti-O higher k gate dielectric films (~2.55 nm) have been prepared by atomic layer deposition. Their electrical properties and application in ETSOI (fully depleted extremely thin SOI) PMOSFETs were studied. It is found that at the Ti concentration of Ti/(Ti + Hf) ~9.4%, low equivalent gate oxide thickness (EOT) of ~0.69 nm and acceptable gate leakage current density of 0.61 A/cm 2 @ (V fb  - 1)V could be obtained. The conduction mechanism through the gate dielectric is dominated by the F-N tunneling in the gate voltage range of -0.5 to -2 V. Under the same physical thickness and process flow, lower EOT and higher I on /I off ratio could be obtained while using Hf-Ti-O as gate dielectric compared with HfO 2 . With Hf-Ti-O as gate dielectric, two ETSOI PMOSFETs with gate width/gate length (W/L) of 0.5 μm/25 nm and 3 μm/40 nm show good performances such as high I on , I on /I off ratio in the magnitude of 10 5 , and peak transconductance, as well as suitable threshold voltage (-0.3~-0.2 V). Particularly, ETSOI PMOSFETs show superior short-channel control capacity with DIBL <82 mV/V and subthreshold swing <70 mV/decade.

Thermoluminescence and dielectric response of LiKSO{sub 4}:Gd to {gamma}-radiation

Energy Technology Data Exchange (ETDEWEB)

El-Kolaly, M.A.; Kassem, M.E.; Higazy, A.A.; Ismail, L.Z.; Al-Houty, L.I. [Qatar Univ., Doha (Qatar). Dept. of Physics

1994-10-01

The effect of {gamma}-radiation dose up to about 324 kGy on the thermoluminescence and dielectric properties of LiKSO{sub 4}:Gd was studied. All glow curves exhibited a single peak around 373 K. The activation energy of this peak was estimated to be about 0.82 eV. The variation of the TL intensity with {gamma}-dose is characterized by a maximum at 6.75 kGy. The dielectric dispersion was studied as a function of irradiation dose. In the low frequency range straight line behaviour was obtained for low dose (up to 12.3 kGy) while for higher {gamma}-dose, semicircles are obtained. The bulk conductivity was found to increase with dose up to 6.75 kGy. (author).

Low-frequency dielectric dispersion and magnetic properties of La, Gd modified Pb(Fe1/2Ta1/2)O3 multiferroics

International Nuclear Information System (INIS)

Choudhury, R.N.P.; Rodriguez, C.; Bhattacharya, P.; Katiyar, R.S.; Rinaldi, C.

2007-01-01

Pb(Fe 1/2 Ta 1/2 )O 3 (PFT) modified by rare-earth (La and Gd) ions has been synthesized in a single phase using a double-stage synthesis (i.e., Columbite) technique. Scanning electron micrographs (SEM) of the pellet samples have shown a significant change in their grain size and uniform distribution of Gd/La at the Fe-sites. The room temperature X-ray structural analysis shows that the reported cubic (or tetragonal) structure of PFT has been distorted to a monoclinic system on substitution of La/Gd at the Fe-site. Detailed studies of dielectric properties of the above compound on La/Gd substitution have shown strong dielectric dispersion at low frequency (i.e. relaxor behavior) with drastic change in transition temperature. Magnetic characterization shows that though the PFT sample displays an antiferromagnetic transition at ∼150 K, the rare-earth ions-substituted samples do not. Furthermore, temperature dependence of magnetization measurements shows that spin glass transition observed in PFT at low temperatures (5-20 K) does not exist in the La and Gd substituted PFT. Doping of Gd in PFT increases the sample magnetization, especially at low temperature

Note: On the dielectric constant of nanoconfined water

OpenAIRE

Zhang, Chao

2018-01-01

Investigations of dielectric properties of water in nanoconfinement are highly relevant for various applications. Here, using a simple capacitor model, we show that the low dielectric constant of nanoconfined water found in molecular dynamics simulations can be largely explained by the so-called dielectric dead-layer effect known for ferroelectric nanocapacitors.

Broadband dielectric spectroscopy and calorimetric investigations of D-lyxose.

Science.gov (United States)

Singh, Lokendra P; Alegría, A; Colmenero, J

2011-10-18

Using broadband dielectric spectroscopy, we have studied different types of relaxation processes, namely, primary (α), secondary (β), and another sub-T(g) process called γ-process, in the supercooled state of D-lyxose, over a wide frequency (10(-2)-10(9) Hz) and temperature range (120-340 K). In addition, the same sample was analyzed by differential scanning calorimeter. The temperature dependence of the relaxation times as well as the dielectric strength of different processes has been critically examined. It has been observed that the slower secondary relaxation (designated as β-) process shifts to lower frequencies with increasing applied pressure, but not the faster one. This pressure dependence indicates that the observed slower secondary relaxation (β-) is Johari-Goldstein relaxation process and faster one (γ-process) is probably the rotation of hydroxymethyl (-CH(2)OH) side group attached to the sugar ring, that is, of intramolecular origin. Copyright © 2011 Elsevier Ltd. All rights reserved.

SEMICONDUCTOR TECHNOLOGY: Wet etching characteristics of a HfSiON high-k dielectric in HF-based solutions

Science.gov (United States)

Yongliang, Li; Qiuxia, Xu

2010-03-01

The wet etching properties of a HfSiON high-k dielectric in HF-based solutions are investigated. HF-based solutions are the most promising wet chemistries for the removal of HfSiON, and etch selectivity of HF-based solutions can be improved by the addition of an acid and/or an alcohol to the HF solution. Due to densification during annealing, the etch rate of HfSiON annealed at 900 °C for 30 s is significantly reduced compared with as-deposited HfSiON in HF-based solutions. After the HfSiON film has been completely removed by HF-based solutions, it is not possible to etch the interfacial layer and the etched surface does not have a hydrophobic nature, since N diffuses to the interface layer or Si substrate formation of Si-N bonds that dissolves very slowly in HF-based solutions. Existing Si-N bonds at the interface between the new high-k dielectric deposit and the Si substrate may degrade the carrier mobility due to Coulomb scattering. In addition, we show that N2 plasma treatment before wet etching is not very effective in increasing the wet etch rate for a thin HfSiON film in our case.

Investigations on electrical conductivity and dielectric properties of Na doped ZnO synthesized from sol gel method

Energy Technology Data Exchange (ETDEWEB)

Tabib, Asma; Sdiri, Nasr [Laboratoire de Physico-Chimie des Matériaux Minéraux et leurs Applications, Centre National de Recherches en Sciences des Matériaux, B.P. 95 Hammam-Lif, 2050 (Tunisia); Elhouichet, Habib, E-mail: habib.elhouichet@fst.rnu.tn [Laboratoire de Physico-Chimie des Matériaux Minéraux et leurs Applications, Centre National de Recherches en Sciences des Matériaux, B.P. 95 Hammam-Lif, 2050 (Tunisia); Département de Physique, Faculté des Sciences de Tunis, University Tunis El Manar, Tunis 2092 (Tunisia); Férid, Mokhtar [Laboratoire de Physico-Chimie des Matériaux Minéraux et leurs Applications, Centre National de Recherches en Sciences des Matériaux, B.P. 95 Hammam-Lif, 2050 (Tunisia)

2015-02-15

Highlights: • ZnO nanoparticles doped with Na were prepared from sol-gel method. • Electric conductivity and dielectric properties were investigated. • The ZnO conductivity is estimated to be of p-type for critical Na doping of 1.5% at. - Abstract: Na doped ZnO nanoparticles (NPs) were elaborated by sol gel technique. The X-ray diffraction patterns show that the peaks are indexed to the hexagonal structure without any trace of an extra phase. Electric and dielectric properties were investigated using complex impedance spectroscopy. The impedance spectra were analyzed in terms of equivalent circuits involving resistors, capacitors and constant phase elements (CPE). The contribution of grain boundary resistance to the total resistance of the system is remarkable. The AC conductivity increases with temperature following the Arrhenius law, with single apparent activation energy for conduction process. The frequency dependence of the electric conductivity follows a simple power law behavior, in according to relation σ{sub AC}(ω) = σ(0) + A ω{sup s}, where s is smaller than 1. The analysis of dc conductivity indicates that the conduction is ionic in nature. The study of its variation, at fixed temperature, with Na content shows sharp decrease which is explained by the formation of Na{sub Zn} acceptor. It was found that the dc conductivity reaches its minimum value for critical Na concentration of 1.5% at which the conductivity is estimated to be of p-type. Impedance and modulus study reveals the temperature dependent non-Debye type relaxation phenomenon. Dielectric studies revealed a promising dielectric properties (relatively high ε′ at low frequencies and low loss at high frequencies). In the low-frequency region, the values of M′ tends to zero suggesting negligible or absent electrode polarization phenomenon. The frequency dependent maxima in the imaginary modulus are found to obey to Arrhenius law.

Low temperature perovskite crystallization of highly tunable dielectric Ba0.7Sr0.3TiO3 thick films deposited by ion beam sputtering on platinized silicon substrates

Science.gov (United States)

Zhu, X. H.; Guigues, B.; Defaÿ, E.; Dubarry, C.; Aïd, M.

2009-02-01

Ba0.7Sr0.3TiO3 (BST) thick films with thickness up to 1 μm were deposited on Pt-coated silicon substrates by ion beam sputtering, followed by an annealing treatment. It is demonstrated that pure well-crystallized perovskite phase could be obtained in thick BST films by a low temperature process (535 °C). The BST thick films show highly tunable dielectric properties with tunability (at 800 kV/cm) up to 51.0% and 66.2%, respectively, for the 0.5 and 1 μm thick films. The relationship between strains and dielectric properties was systematically investigated in the thick films. The results suggest that a comparatively larger tensile thermal in-plane strain (0.15%) leads to the degradation in dielectric properties of the 0.5 μm thick film; besides, strong defect-related inhomogeneous strains (˜0.3%) make the dielectric peaks smearing and broadening in the thick films, which, however, preferably results in high figure-of-merit factors over a wide operating temperature range. Moreover, the leakage current behavior in the BST thick films was found to be dominated by the space-charge-limited-current mechanism, irrespective of the film thickness.

Low temperature perovskite crystallization of highly tunable dielectric Ba0.7Sr0.3TiO3 thick films deposited by ion beam sputtering on platinized silicon substrates

International Nuclear Information System (INIS)

Zhu, X. H.; Defaye, E.; Aied, M.; Guigues, B.; Dubarry, C.

2009-01-01

Ba 0.7 Sr 0.3 TiO 3 (BST) thick films with thickness up to 1 μm were deposited on Pt-coated silicon substrates by ion beam sputtering, followed by an annealing treatment. It is demonstrated that pure well-crystallized perovskite phase could be obtained in thick BST films by a low temperature process (535 deg. C). The BST thick films show highly tunable dielectric properties with tunability (at 800 kV/cm) up to 51.0% and 66.2%, respectively, for the 0.5 and 1 μm thick films. The relationship between strains and dielectric properties was systematically investigated in the thick films. The results suggest that a comparatively larger tensile thermal in-plane strain (0.15%) leads to the degradation in dielectric properties of the 0.5 μm thick film; besides, strong defect-related inhomogeneous strains (∼0.3%) make the dielectric peaks smearing and broadening in the thick films, which, however, preferably results in high figure-of-merit factors over a wide operating temperature range. Moreover, the leakage current behavior in the BST thick films was found to be dominated by the space-charge-limited-current mechanism, irrespective of the film thickness

Dielectric Elastomers for Fluidic and Biomedical Applications

Science.gov (United States)

McCoul, David James

other smaller particulate debris into the system. After a channel blockage was confirmed, three actuation attempts successfully cleared the blockage. Further tests indicated that the device were biocompatible with HeLa cells at 3 kV. To our knowledge this is the first pairing of dielectric elastomers with microfluidics in a non-electroosmotic context. Applications may include adaptive microfilters, micro-peristaltic pumps, and reduced-complexity lab-on-a-chip devices. Dielectric elastomers can also be adapted to manipulate fluidic systems on a larger scale. The second part of the dissertation research reports a novel low-profile, biomimetic dielectric elastomer tubular actuator capable of actively controlling hydraulic flow. The tubular actuator has been established as a reliable tunable valve, pinching a secondary silicone tube completely shut in the absence of a fluidic pressure bias or voltage, offering a high degree of resistance against fluidic flow, and able to open and completely remove this resistance to flow with an applied low power actuation voltage. The system demonstrates a rise in pressure of ~3.0 kPa when the dielectric elastomer valve is in the passive, unactuated state, and there is a quadratic fall in this pressure with increasing actuation voltage, until ~0 kPa is reached at 2.4 kV. The device is reliable for at least 2,000 actuation cycles for voltages at or below 2.2 kV. Furthermore, modeling of the actuator and fluidic system yields results consistent with the observed experimental dependence of intrasystem pressure on input flow rate, actuator prestretch, and actuation voltage. To our knowledge, this is the first actuator of its type that can control fluid flow by directly actuating the walls of a tube. Potential applications may include an implantable artificial sphincter, part of a peristaltic pump, or a computerized valve for fluidic or pneumatic control. The final part of the dissertation presents a novel dielectric elastomer band with

Electrical characterization of ALD HfO2 high-k dielectrics on ( 2 ¯ 01) β-Ga2O3

Science.gov (United States)

Shahin, David I.; Tadjer, Marko J.; Wheeler, Virginia D.; Koehler, Andrew D.; Anderson, Travis J.; Eddy, Charles R.; Christou, Aris

2018-01-01

The electrical quality of HfO2 dielectrics grown by thermal atomic layer deposition at 175 °C on n-type ( 2 ¯ 01) β-Ga2O3 has been studied through capacitance- and current-voltage measurements on metal-oxide-semiconductor capacitors. These capacitors exhibited excellent electrical characteristics, including dual-sweep capacitance-voltage curves with low hysteresis and stretch-out and a frequency-stable dielectric constant of k˜14 when measured between 10 kHz and 1 MHz. The C-V curves exhibited a uniform and repeatable +1.05 V shift relative to the ideal case when swept from 3.5 to -5 V, yielding positively measured flatband (+2.15 V) and threshold (+1.05 V) voltages that may be useful for normally off n-channel Ga2O3 devices. Using the Terman method, an average interface trap density of 1.3 × 1011 cm-2.eV-1 was obtained between 0.2 and 0.6 eV below the conduction band edge. The forward bias current-voltage characteristic was successfully fitted to the Fowler-Nordheim tunneling model at a field strength of 5 MV/cm, allowing an extraction of a 1.3 eV conduction band offset between HfO2 and Ga2O3, which matches the value previously determined from x-ray photoelectron spectroscopy. However, a temperature dependence in the leakage current was observed. These results suggest that HfO2 is an appealing dielectric for Ga2O3 device applications.

An experimental investigation of the dielectric properties of electrorheological fluids

International Nuclear Information System (INIS)

Sun, Y; Thomas, M; Masounave, J

2009-01-01

A home-made electrorheological (ER) fluid, known as ETSERF, has been created with suspension-based powders dispersed in silicone oil. Because of the special structure of their particles, ETSERF suspensions present a complex behavior. In the absence of an electric field, the ETSERF fluid manifests a near-Newtonian behavior, but when an electric field is applied, it exhibits a pseudoplastic behavior with yield stress. The ER effect under DC electric fields has been experimentally investigated using both hydrous and anhydrous ER fluids. The ER properties are strongly dependent on the dielectric properties of ETSERF suspensions, and hydrous ER fluids have a high dielectric constant and a high relaxation frequency which show a strong electrorheological effect. The relationship between the electrorheological effect and the permittivity of ER fluids has also been extensively studied. Experimental results show that the interfacial polarization plays an important role in the electrorheological phenomenon. The ageing of ETSERF fluids was also studied and it was found that the dielectric properties (mainly the dielectric loss tangent) and ER properties are strongly related to the duration of ageing. A fresh ETSERF suspension exhibits high relaxation frequency and high dielectric constant. These results are mainly explained by the effect of interfacial polarizations

Low pull-in voltage electrostatic MEMS switch using liquid dielectric

KAUST Repository

Zidan, Mohammed A.

2014-08-01

In this paper, we present an electrostatic MEMS switch with liquids as dielectric to reduce the actuation voltage. The concept is verified by simulating a lateral dual gate switch, where the required pull-in voltage is reduced by more than 8 times after using water as a dielectric, to become as low as 5.36V. The proposed switch is simulated using COMSOL multiphysics using various liquid volumes to study their effect on the switching performance. Finally, we propose the usage of the lateral switch as a single switch XOR logic gate.

Colossal Dielectric Behavior of Ga+Nb Co-Doped Rutile TiO2.

Science.gov (United States)

Dong, Wen; Hu, Wanbiao; Berlie, Adam; Lau, Kenny; Chen, Hua; Withers, Ray L; Liu, Yun

2015-11-18

Stimulated by the excellent colossal permittivity (CP) behavior achieved in In+Nb co-doped rutile TiO2, in this work we investigate the CP behavior of Ga and Nb co-doped rutile TiO2, i.e., (Ga(0.5)Nb(0.5))(x)Ti(1-x)O2, where Ga(3+) is from the same group as In(3+) but with a much smaller ionic radius. Colossal permittivity of up to 10(4)-10(5) with an acceptably low dielectric loss (tan δ = 0.05-0.1) over broad frequency/temperature ranges is obtained at x = 0.5% after systematic synthesis optimizations. Systematic structural, defect, and dielectric characterizations suggest that multiple polarization mechanisms exist in this system: defect dipoles at low temperature (∼10-40 K), polaronlike electron hopping/transport at higher temperatures, and a surface barrier layer capacitor effect. Together these mechanisms contribute to the overall dielectric properties, especially apparent observed CP. We believe that this work provides comprehensive guidance for the design of new CP materials.

Electrical properties of nano-resistors made from the Zr-doped HfO2 high-k dielectric film

Science.gov (United States)

Zhang, Shumao; Kuo, Yue

2018-03-01

Electrical properties of nano-sized resistors made from the breakdown of the metal-oxide-semiconductor capacitor composed of the amorphous high-k gate dielectric have been investigated under different stress voltages and temperatures. The effective resistance of nano-resistors in the device was estimated from the I-V curve in the high voltage range. It decreased with the increase of the number of resistors. The resistance showed complicated temperature dependence, i.e. it neither behaves like a conductor nor a semiconductor. In the low voltage operation range, the charge transfer was controlled by the Schottky barrier at the nano-resistor/Si interface. The barrier height decreased with the increase of stress voltage, which was probably caused by the change of the nano-resistor composition. Separately, it was observed that the barrier height was dependent on the temperature, which was probably due to the dynamic nano-resistor formation process and the inhomogeneous barrier height distribution. The unique electrical characteristics of this new type of nano-resistors are important for many electronic and optoelectronic applications.

Self Oscillating Mixer with Dielectric Resonator for Low Noise Block Application

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Endon Bharata

2011-08-01

Full Text Available In this paper, the development of a self oscillating mixer (SOM as part of a low noise block (LNB for a satellite television receiver is investigated numerically and experimentally. In contrast to other mixers, the developed SOM requires no separate local oscillator as it generates own local oscillator signal. The SOM is developed using a monolithic microwave integrated circuit (MMIC comprised of two bipolar transistors coupled as a Darlington pair and a dielectric resonator to establish a local oscillator signal. The SOM is designed to oscillate at 3.62GHz driven from 50W signal generator. The prototype of SOM is fabricated on a dielectric substrate of glass-reinforced hydrocarbon/ceramic lamination (RO4350B board which has a thickness of 0.762mm and relative permittivity of 3.66. The prototype is then characterized experimentally and exhibits a conversion gain of 8dB with the input and output voltage standing wave ratio (VSWR less than 2 across the 2520MHz to 2670MHz operating frequency band.

Low frequency alternating current conduction and dielectric relaxation in polypyrrole irradiated with 100 MeV swift heavy ions of silver (Ag{sup 8+})

Energy Technology Data Exchange (ETDEWEB)

Kaur, Amarjeet, E-mail: amarkaur@physics.du.ac.in [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Dhillon, Anju [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Avasthi, D.K. [Inter University Accelerator Center (IUAC), Aruna Asaf Ali Road, New Delhi 110067 (India)

2013-07-15

Polypyrrole (PPY) films were prepared by electrochemical polymerization technique. The fully undoped samples were irradiated with different radiation fluences ranging from 10{sup 10} to 10{sup 12} ions cm{sup −2} of 100 MeV silver (Ag{sup 8+}) ions. The temperature dependence of ac conductivity [σ{sub m}(ω)], dielectric constant (ε′) and dielectric loss (ε′′) of both irradiated as well as unirradiated samples have been investigated in 77–300 K. There exists typical Debye type dispersion. Giant increase in dielectric constant has been observed for irradiated samples which is attributed to polaronic defects produced during irradiation. - Graphical abstract: Display Omitted - Highlights: • Polypyrrole samples were prepared by electrochemical technique. • The fully undoped samples were irradiated with 100 MeV silver (Ag{sup 8+}) ions. • Giant increase in dielectric constant in irradiated samples is observed. • Dielectric behaviour is attributed to polaronic defects produced during irradiation.

Dielectric Behavior of Low Microwave Loss Unit Cell for All Dielectric Metamaterial

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Tianhuan Luo

2015-01-01

Full Text Available With a deep study of the metamaterial, its unit cells have been widely extended from metals to dielectrics. The dielectric based unit cells attract much attention because of the advantage of easy preparation, tunability, and higher frequency response, and so forth. Using the conventional solid state method, we prepared a kind of incipient ferroelectrics (calcium titanate, CaTiO3 with higher microwave permittivity and lower loss, which can be successfully used to construct metamaterials. The temperature and frequency dependence of dielectric constant are also measured under different sintering temperatures. The dielectric spectra showed a slight permittivity decrease with the increase of temperature and exhibited a loss of 0.0005, combined with a higher microwave dielectric constant of ~167 and quality factor Q of 2049. Therefore, CaTiO3 is a kind of versatile and potential metamaterial unit cell. The permittivity of CaTiO3 at higher microwave frequency was also examined in the rectangular waveguide and we got the permittivity of 165, creating a new method to test permittivity at higher microwave frequency.

Comparative study of phase structure and dielectric properties for K0.5Bi0.5TiO3-BiAlO3 and LaAlO3-BiAlO3

International Nuclear Information System (INIS)

Hou, Yudong; Zheng, Mupeng; Si, Meiju; Cui, Lei; Zhu, Mankang; Yan, Hui

2013-01-01

In this work, two perovskite-type compounds, K 0.5 Bi 0.5 TiO 3 and LaAlO 3 , have been selected as host material to incorporate with BiAlO 3 using a solid-state reaction route. The phase evolution and dielectric properties for both systems have been investigated in detail. For the K 0.5 Bi 0.5 TiO 3 -BiAlO 3 system, it is interesting to find that when using Bi 2 O 3 , Al 2 O 3 , K 2 CO 3 , and TiO 2 as starting materials, the formed compounds are K 0.5 Bi 0.5 TiO 3 -K 0.5 Bi 4.5 Ti 4 O 15 and Al 2 O 3 only plays a dopant role. There are two distinct dielectric peaks appearing in the patterns of temperature dependence of dielectric constant, corresponding to the phase-transition points of perovskite-type K 0.5 Bi 0.5 TiO 3 and Aurivillius-type K 0.5 Bi 4.5 Ti 4 O 15 , independently. In comparison, using Bi 2 O 3 , Al 2 O 3 , and La 2 O 3 as starting materials, the pure perovskite phase LaAlO 3 -BiAlO 3 can be obtained. Compared to the inherent paraelectric behavior in LaAlO 3 , the diffuse phase-transition phenomena can be observed in the LaAlO 3 -BiAlO 3 binary system, which corresponds well to the Vogel-Fulcher (VF) relationship. Moreover, compared to pure LaAlO 3 , the synthesized LaAlO 3 -BiAlO 3 compound shows enhanced dielectric properties, which are promising in application as gate dielectric materials. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Temperature dependence of the dielectric properties of rubber wood

Science.gov (United States)

Mohammed Firoz Kabir; Wan M. Daud; Kaida B. Khalid; Haji A.A. Sidek

2001-01-01

The effect of temperature on the dielectric properties of rubber wood was investigated in three anisotropic directions—longitudinal, radial, and tangential, and at different measurement frequencies. Low frequency measurements were conducted with a dielectric spectrometer, and high frequencies used microwave applied with open-ended coaxial probe sensors. Dielectric...

The electrical and dielectric properties of the Au/Ti/HfO2/n-GaAs structures

Science.gov (United States)

Karabulut, Abdulkerim; Türüt, Abdulmecit; Karataş, Şükrü

2018-04-01

In this work, temperature dependent electrical and dielectric properties of the Au/Ti/HfO2/n-GaAs structures were investigated using capacitance-voltage (C-V) and conductance-voltage (G-V) measurements in the temperature range of 60-320 K by steps of 20 K at 1 MHz. The dielectric constant (ε‧), dielectric loss (ε″), dielectric loss tangent (tanδ) and ac electrical conductivities (σac) have been calculated as a function of temperature. These values of the ε‧, ε″, tanδ and σac have been found to be 2.272, 5.981, 2.631 and 3.32 × 10-6 (Ω-1cm-1) at 80 K, respectively, 1.779, 2.315, 1.301 and 1.28 × 10-6 (Ω-1cm-1), respectively at 320 K. These decrease of the dielectric parameters (ε‧, ε″, tanδ and σac) have been observed at high temperatures. The experimental results show that electrical and dielectric properties are strongly temperature and bias voltage dependent.

Dielectric spectroscopy investigation of proton transfer processes in carboxymethyl alpha-cyclodextrin polymer cross-linked by epichlorohydrin

Science.gov (United States)

Papaioannou, Panagoula K.; Karagianni, Chaido S.; Kakali, Glykeria; Charalampopoulos, Vasileios G.

2018-03-01

The carboxymethyl-α-cyclodextrin polymer (cross-linked by epichlorohydrin) is investigated by dielectric spectroscopy over a frequency range of 0.1-100 kHz and the temperature ranges of 137.2-297.6 K (cooling) and 137.2-472 K (heating). Upon cooling to 288.1 K, the ac-conductivity invariance is attributed to slight changes in the topology of the H-bonded chains. From 288.1 to 244.0 K, the ac-conductivity decreases abruptly (following the Arrhenius law with Eα = 0.40 eV), whereas below 244.0 K it presents no important variations. During heating from 137.2 to 302.6 K, no thermal hysteresis is observed. From 302.6 to 364.9 K, the ac-conductivity increases (Eα = 0.71 eV), whereas above 383 K it decreases up to 436.7 K since the dehydration process has been completed and the H-bonded chains can no longer be retained. From 436.7 to 472 K, the ac-conductivity increases again (Eα = 0.76 eV) indicating the formation of "new" H-bonded chains. Curve fitting of various relaxation processes is done by Havriliak-Negami equation at selective temperatures.

Dielectric properties of ligand-modified gold nanoparticle/SU-8 photopolymer based nanocomposites

Energy Technology Data Exchange (ETDEWEB)

Toor, Anju, E-mail: atoor@berkeley.edu [Department of Mechanical Engineering, University of California, Berkeley, CA 94720 (United States); So, Hongyun, E-mail: hyso@berkeley.edu [Department of Mechanical Engineering, University of California, Berkeley, CA 94720 (United States); Pisano, Albert P. [Department of Mechanical Engineering, University of California, Berkeley, CA 94720 (United States); Department of Mechanical and Aerospace Engineering, University of California, San Diego, CA 92093 (United States)

2017-08-31

Highlights: • Ligand-modified gold NP/SU-8 nanocomposites were synthesized and demonstrated. • Particle agglomeration and dispersion were characterized with different NPs concentration. • Nanocomposites showed higher average dielectric permittivity compared to SU-8 only. • Relatively lower dielectric loss (average 0.09 at 1 kHz) was achieved with 10 % w/w NPs. - Abstract: This article reports the enhanced dielectric properties of a photodefinable polymer nanocomposite material containing sub–10 nm coated metal nanoparticles (NPs). The surface morphology of the synthesized dodecanethiol-functionalized gold NPs was characterized using the transmission electron microscopy (TEM). We investigated the particle agglomeration and dispersion during the various stages of the nanocomposite synthesis using TEM. Physical properties such as dielectric permittivity and dielectric loss were measured experimentally. The dependence of the dielectric permittivity and loss tangent on the particle concentration, and frequency was studied. Nanocomposite films showed an approximately three times enhancement in average dielectric constant over the polymer base value and an average dielectric loss of 0.09 at 1 kHz, at a filler loading of 10% w/w.

Polymer/metal oxide hybrid dielectrics for low voltage field-effect transistors with solution-processed, high-mobility semiconductors

Energy Technology Data Exchange (ETDEWEB)

Held, Martin; Schießl, Stefan P.; Gannott, Florentina [Department of Materials Science and Engineering, Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen D-91058 (Germany); Institute for Physical Chemistry, Universität Heidelberg, Heidelberg D-69120 (Germany); Miehler, Dominik [Department of Materials Science and Engineering, Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen D-91058 (Germany); Zaumseil, Jana, E-mail: zaumseil@uni-heidelberg.de [Institute for Physical Chemistry, Universität Heidelberg, Heidelberg D-69120 (Germany)

2015-08-24

Transistors for future flexible organic light-emitting diode (OLED) display backplanes should operate at low voltages and be able to sustain high currents over long times without degradation. Hence, high capacitance dielectrics with low surface trap densities are required that are compatible with solution-processable high-mobility semiconductors. Here, we combine poly(methyl methacrylate) (PMMA) and atomic layer deposition hafnium oxide (HfO{sub x}) into a bilayer hybrid dielectric for field-effect transistors with a donor-acceptor polymer (DPPT-TT) or single-walled carbon nanotubes (SWNTs) as the semiconductor and demonstrate substantially improved device performances for both. The ultra-thin PMMA layer ensures a low density of trap states at the semiconductor-dielectric interface while the metal oxide layer provides high capacitance, low gate leakage and superior barrier properties. Transistors with these thin (≤70 nm), high capacitance (100–300 nF/cm{sup 2}) hybrid dielectrics enable low operating voltages (<5 V), balanced charge carrier mobilities and low threshold voltages. Moreover, the hybrid layers substantially improve the bias stress stability of the transistors compared to those with pure PMMA and HfO{sub x} dielectrics.

Vibrational spectroscopic and dielectric properties investigations of phase transitions in KMgPO4 compound

Science.gov (United States)

Miladi, L.; Oueslati, A.; Guidara, K.

2017-11-01

The potassium orthophosphate KMgPO4 with a β-tridymite structure was synthesized via solid-state reaction. X-ray diffraction study confirms the formation of a single phase material which crystallizes at room temperature in monoclinic system. This compound has been investigated by vibrational spectroscopy in the temperature range573-723 K. Thermal analysis shows that this composition undergoes two phase transitions at T1=633Kand T2=693 K.The evolution of Raman line ν and half -width Δν versus temperature introduces huge changes which are associated with the phase transitions originating from the reorientation of the PO4 tetrahedron. Besides, an analysis of the dielectric constants ε‧ and ε″versus temperature at several frequencies shows a distribution of relaxation times. This relaxation is probably due to the change in dynamical state of the K+ cation. The ac conductivity behavior can be understood in terms of the motions of K+ cations along the tunnels which are formed by six-membered rings of MgO4 and PO4 tetrahedron linked by common vertices. The activation energies values obtained from the thermal evolution of the conductivity are: Ea1=0.52 eV (T693 K).

Investigation of some properties of the dielectric particle detector

Energy Technology Data Exchange (ETDEWEB)

Gavalyan, V.G.; Gukasyan, S.M.; Kavalov, R.L.; Karapetyan, R.A.; Lorikyan, M.P. (Erevanskij Fizicheskij Inst. (USSR))

1981-01-01

Results of investigation into temporary dispersion and amplitude resolution of a dielectric detector (DD) of particles are given. In this detector secondary electrons produced by a particle passing through a dielectric layer are gathered on thin anode filaments strenched inside the dielectric layer. As a working substance of the detector investigated used was CsI having 1.7% relative density of monocrystal, gap between planes of 20 ..mu..m diameter anode filaments and cathode electrodes was approximately equal to 200 ..mu..m, distance between anode filaments was approximately 250 ..mu..m. DD having working area S=5 cm/sup 2/ was placed at a distance of 2 cm from 5 MeV radioactive alpha source of 10/sup 4/ particle/s intensity. Curve of particle detection efficiency for this detector reached plateau at a level of 100% in the range of working voltages from 800 to 1200 V. Coincidence method together with a time-amplitude converter, at inlets of which applied were pulses from DD and a scintillation counter placed under DD, were used to measure temporary dispersion. Data on behaviour of particle registration efficiency depending on time of continuous effect of working and inverse voltages are given. It is found that temporary dispersion of the DD and scintillation counter system is a value of order of 1 ns and amplitude resolution of DD is an order of 100%.

Analytical Modeling of Triple-Metal Hetero-Dielectric DG SON TFET

Science.gov (United States)

Mahajan, Aman; Dash, Dinesh Kumar; Banerjee, Pritha; Sarkar, Subir Kumar

2018-02-01

In this paper, a 2-D analytical model of triple-metal hetero-dielectric DG TFET is presented by combining the concepts of triple material gate engineering and hetero-dielectric engineering. Three metals with different work functions are used as both front- and back gate electrodes to modulate the barrier at source/channel and channel/drain interface. In addition to this, front gate dielectric consists of high-K HfO2 at source end and low-K SiO2 at drain side, whereas back gate dielectric is replaced by air to further improve the ON current of the device. Surface potential and electric field of the proposed device are formulated solving 2-D Poisson's equation and Young's approximation. Based on this electric field expression, tunneling current is obtained by using Kane's model. Several device parameters are varied to examine the behavior of the proposed device. The analytical model is validated with TCAD simulation results for proving the accuracy of our proposed model.

Amorphous Dielectric Thin Films with Extremely Low Mechanical Loss

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Liu X.

2015-04-01

Full Text Available The ubiquitous low-energy excitations are one of the universal phenomena of amorphous solids. These excitations dominate the acoustic, dielectric, and thermal properties of structurally disordered solids. One exception has been a type of hydrogenated amorphous silicon (a-Si:H with 1 at.% H. Using low temperature elastic and thermal measurements of electron-beam evap-orated amorphous silicon (a-Si, we show that TLS can be eliminated in this system as the films become denser and more structurally ordered under certain deposition conditions. Our results demonstrate that TLS are not intrinsic to the glassy state but instead reside in low density regions of the amorphous network. This work obviates the role hydrogen was previously thought to play in removing TLS in a-Si:H and favors an ideal four-fold covalently bonded amorphous structure as the cause for the disappearance of TLS. Our result supports the notion that a-Si can be made a “perfect glass” with “crystal-like” properties, thus offering an encouraging opportunity to use it as a simple crystal dielectric alternative in applications, such as in modern quantum devices where TLS are the source of dissipation, decoherence and 1/f noise.

Microwave dielectric properties of low-fired Li_2TiO_3–MgO ceramics for LTCC applications

International Nuclear Information System (INIS)

Ma, Jian-Li; Fu, Zhi-Fen; Liu, Peng; Wang, Bing; Li, Yang

2016-01-01

Graphical abstract: This figure gives the Q × f and τ_f of Li_2TiO_3–MgO ceramics sintered at various temperatures with different LiF contents. Addition of LiF enhanced the sinterability and optimized the microwave dielectric properties of Li_2TiO_3–MgO ceramics. The excellent microwave dielectric properties (ε_r = 15.8, Q × f = 64,500 GHz, and τ_f = −0.2 ppm/°C) of Li_2TiO_3–MgO ceramics sintered at 850 °C illustrated that LiF is a simple effective sintering aids for Li_2TiO_3–MgO ceramics. Such sample was compatible with Ag electrodes, suitable for the low-temperature co-fired ceramics (LTCC) applications. - Highlights: • Temperature stability of Li_2TiO_3 ceramics were improved by doping MgO. • The low-fired Li_2TiO_3–MgO ceramics are fabricated. • LiF liquid phase reduced sintering temperature of Li_2TiO_3–MgO ceramics to 850 °C. • The low-fired Li_2TiO_3–MgO ceramics possess well microwave dielectric properties. • The sample was compatible with Ag electrodes and suitable for LTCC applications. - Abstract: We fabricated the low-fired Li_2TiO_3–MgO ceramics doped with LiF by a conventional solid-state route, and investigated systematically their sintering characteristics, microstructures and microwave dielectric properties. The results showed that temperature stability of Li_2TiO_3 ceramics were improved by doping MgO. Well microwave dielectric properties for Li_2TiO_3–13 wt%MgO (LTM) ceramics with ε_r = 16.4, Q × f = 87,500 GHz, and τ_f = −1.2 ppm/°C were obtained at 1325 °C. Furthermore, addition of LiF enhanced the sinterability and optimized the microwave dielectric properties of LTM ceramics. A typically sample of LTM-4 wt%LiF ceramics with optimum dielectric properties (ε_r = 15.8, Q × f = 64,500 GHz, and τ_f = −0.2 ppm/°C) were achieved at 850 °C for 4 h. Such sample was compatible with Ag electrodes, suitable for the low-temperature co-fired ceramics (LTCC) applications.

Experimental investigation of the dielectric properties of soil under hydraulic loading

International Nuclear Information System (INIS)

Bittner, Tilman; Bore, Thierry; Karlovšek, Jurij; Scheuermann, Alexander; Wagner, Norman

2017-01-01

An experimental set-up was developed in order to determine the coupled hydraulic, dielectric and mechanical properties of granular media under hydraulic loading. The set-up consisted of a modified column for permeability tests involving a flow meter and pressure transducers along the sample to quantify the hydraulic gradient. A newly developed open-ended coaxial probe allowed the measurement of the frequency dependent dielectric permittivity of the material under test. The shear strength of the sample within the column was measured using a conventional vane shear device. In this paper, the overall set-up is introduced with focus on the open-ended coaxial probe. The design and calibration of the probe are introduced in detail. A numerical study showed that the sensitive cylindrical volume of the probe was approximately 150 mm in diameter with a depth of 65 mm. An investigation with glass beads showed that the set-up allowed the parameterization of the hydraulic, mechanic and dielectric parameters of granular materials under the influence of vertical flow. A satisfactorily good correlation between porosity and the real part of the dielectric permittivity was detected. The critical hydraulic gradient defining the transition of a fixed bed of particles to fluidization was characterized by a sharp peak in the evolution of the hydraulic conductivity and could easily be determined from the measurements. The shear strength of the material under test reduces linearly with increasing hydraulic gradient. Future investigations will be carried out to provide the required parameterizations for experimental and numerical investigations of the internal erosion of granular media. (paper)

Low temperature magneto-dielectric measurements on BiFeO3 lightly substituted by cobalt

International Nuclear Information System (INIS)

Ray, J.; Biswal, A. K.; Vishwakarma, P. N.

2015-01-01

Dielectric and magnetodielectric measurements are done on BiFe 1−x Co x O 3 : x = 0, 0.01, and 0.02 in the temperature range 70–300 K and up to magnetic field 1.3 T. The dielectric data are well described by Haverliak–Negami expression plus an additional term for the Maxwell Wagner (MW) type relaxations, whose contribution is dominant near room temperature. The parameters obtained from the fitting of data using the above mentioned expression, suggest slowing down of relaxation and approach towards ideal Debye type relaxations, as the temperature is lowered. The dielectric relaxations obey polaronic variable range hopping model with distinct activation energies (E a ) in the extrinsic (6.67T 3/4  meV) and intrinsic (2.88T 3/4  meV) regions for the parent sample (x = 0), and thus a distinct transition from extrinsic to intrinsic behavior is seen at 215 K while lowering the temperature. This distinct transition is missing for Co substituted samples probably due to the extrinsic region values of E a (3.42T 3/4  meV and 2.42T 3/4  meV for x = 0.01 and 0.02, respectively) comparable to that of the intrinsic region (see x = 0). The magnetodielectric measurement shows positive magnetodielectricity (MD) in the intrinsic region (T < 215 K for x = 0) and negative MD in the extrinsic region (T > 215 K for x = 0). The extrinsic region is found to be dominated by MW and magnetoresistance effects, whereas MD in intrinsic regions is due to the spin reorientation transitions. The Co substitution is found to increase the extrinsic and non-Debye contributions to dielectricity, which becomes so large that no spin reorientation transitions are seen in x = 0.02 sample. The pyroelectric active region in x = 0 is found to be dominated by the diffusive behavior having contribution of the form ω −0.5

Electromechanical response of silicone dielectric elastomers

Science.gov (United States)

Cârlescu, V.; Prisăcaru, G.; Olaru, D.

2016-08-01

This paper presents an experimental technique to investigate the electromechanical properties of silicone dielectric elastomers actuated with high DC electric fields. A non-contact measurement technique is used to capture and monitor the thickness strain (contraction) of a circular film placed between two metallic disks electrodes. Two active fillers such as silica (10, 15 and 30 wt%) and barium titanate (5 and 15 wt%) were incorporated in order to increase the actuation performance. Thickness strain was measured at HV stimuli up to 4.5 kV and showed a quadratic dependence against applied electric field indicating that the induced strain is triggered by the Maxwell effect and/or electrostriction phenomenon as reported in literature. The actuation process evidences a rapid contraction upon HV activation and a slowly relaxation when the electrodes are short-circuit due to visco-elastic nature of elastomers. A maximum of 1.22 % thickness strain was obtained at low actuating field intensity (1.5 V/pm) comparable with those reported in literature for similar dielectric elastomer materials.

Ferroelectric and dielectric properties of Sr2-x(Na, K)xBi4Ti5O18 lead-free piezoelectric ceramics

International Nuclear Information System (INIS)

Chen Qian; Xu Zhijun; Chu Ruiqing; Hao Jigong; Zhang Yanjie; Li Guorong; Yin Qingrui

2010-01-01

(Na, K)-doped Sr 2 Bi 4 Ti 5 O 18 (SBTi) bismuth layer structure ferroelectric ceramics were prepared by the solid-state reaction method. Pure bismuth-layered structural Sr 2-x (Na, K) x Bi 4 Ti 5 O 18 (x=0.1, 0.2, 0.3, and 0.4) ceramics with uniform grain size were obtained in this work. The effects of (Na, K)-doping on the dielectric, ferroelectric and piezoelectric properties of SBTi ceramics were investigated. Results showed that (Na, K)-doping caused the Curie temperature of SBTi ceramics to shift to higher temperature and enhanced the ferroelectric and piezoelectric properties. At x=0.2, the ceramics exhibited optimum properties with d 33 =20 pC/N, P r =10.3 μC/cm 2 , and T c =324 o C.

Low-temperature microwave and THz dielectric response in novel microwave ceramics

Czech Academy of Sciences Publication Activity Database

Kamba, Stanislav; Noujni, Dmitri; Pashkin, Alexej; Petzelt, Jan; Pullar, R. C.; Axelsson, A.-K.; McN Alford, N.

2006-01-01

Roč. 26, - (2006), s. 1845-1851 ISSN 0955-2219 R&D Projects: GA ČR(CZ) GA202/04/0993; GA AV ČR(CZ) IAA1010213; GA MŠk(CZ) OC 525.20 Institutional research plan: CEZ:AV0Z10100520 Keywords : dielectric properties * spectroscopy * perovskites * microwave ceramics Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.576, year: 2006

Dielectric properties of some cadmium and mercury amino alcohol complexes at low temperatures

Directory of Open Access Journals (Sweden)

ALAA E. ALI

2002-12-01

Full Text Available The dielectric properties of some cadmium and mercury amino alcohol complexes were studied within the temperature range of 100–300 K at the frequencies of 100, 300 and 1000 kHz. The polarization mechanisms are suggested and the dependence of both e and tg d on both temperature and frequency are analyzed. The analysis of the data reveals semi-conducting features based mainly on the hopping mechanism.

Dielectric and AC-conductivity studies of Dy2O3 doped (K0.5Na0.5NbO3 ceramics

Directory of Open Access Journals (Sweden)

Mahesh Peddigari

2014-08-01

Full Text Available (K0.5Na0.5NbO3 + x wt.% Dy2O3 (x = 0–1.5 ferroelectric ceramics were prepared by conventional solid state reaction method. XRD patterns revealed that orthorhombic symmetry has transformed into psuedocubic symmetry with increasing the substitution of Dy3+ in the Na+ site. Temperature and frequency dependences of relative dielectric permittivity maximum conforms the transformation from normal ferroelectric to relaxor ferroelectric behaviour. Frequency dependence of the relative dielectric permittivity maximum temperature observed for the samples with x ≥ 1.0 and satisfied the Vogel–Fulcher law. The diffuseness exponent γ (1.27–1.95 estimated from the high temperature slopes of the diffused dielectric permittivity data reveals that the degree of relaxor behavior increases with increasing the amount of Dy2O3. The temperature dependence of AC-conductivity σAC (T analysis in the range 310 K < T < 470 K reveals the existence of variable range hopping of charge carriers with average hopping length RH and hopping energy EH are in the range 8.5–27 Å and 48–153 meV, respectively. Voltage dependent dielectric constant measurements confirm the ferroelectric nature of KNN+ x wt% Dy2O3 ceramics.

Structural, dielectric and magnetic studies of magnetoelectric trirutile Fe{sub 2}TeO{sub 6}

Energy Technology Data Exchange (ETDEWEB)

Kaushik, S. D., E-mail: sdkaushik@csr.res.in [UGC-DAE-Consortium for Scientific Research Mumbai Centre, R-5 Shed, BARC, Mumbai-400085 (India); Sahu, B.; Mohapatra, S. R.; Singh, A. K. [Department of Physics and Astronomy, National Institute of Technology, Rourkela-769008, Odisha (India)

2016-05-23

We have investigated structural, magnetic and dielectric properties of Fe{sub 2}TeO{sub 6} which is a magnetoelectric antiferromagnet with the trirutile lattice. Rietveld analysis of room temperature X-ray diffraction data shows the phase purity of the sample with tetragonal trirutile structure (space group P4{sub 2}/mnm). The DC susceptibility measurement performed on polycrystalline powders exhibits antiferromagnetic ordering below transition temperature ~ 210K. The employment of Curie-Weiss law to inverse magnetic susceptibility only in the temperature range 350-260 K indicates the magnetic ordering starts developing before the transition temperature. The temperature dependent dielectric measurements show an intrinsic behavior of dielectric constant below 150 K while a continuous increase in dielectric constant with temperature above 150 K may be attributed to a small increase in electrical conduction, known commonly in the literatures.

The impact of porosity on the formation of manganese based copper diffusion barrier layers on low-κ dielectric materials

International Nuclear Information System (INIS)

McCoy, A P; Bogan, J; Walsh, L; Byrne, C; O’Connor, R; Hughes, G; Woicik, J C

2015-01-01

This work investigates the impact of porosity in low-κ dielectric materials on the chemical and structural properties of deposited Mn thin films for copper diffusion barrier layer applications. X-ray photoelectron spectrscopy (XPS) results highlight the difficulty in distinguishing between the various Mn oxidation states which form at the interlayer dielectric (ILD)/Mn interface. The presence of MnSiO 3 and MnO were identified using x-ray absorption spectroscopy (XAS) measurements on both porous and non-porous dielectric materials with evidence of Mn 2 O 3 and Mn 3 O 4 in the deposited film on the latter surface. It is shown that a higher proportion of deposited Mn converts to Mn silicate on an ILD film which has 50% porosity compared with the same dielectric material with no porosity, which is attributed to an enhanced chemical interaction with the effective larger surface area of porous dielectric materials. Transmission electron microscopy (TEM) and energy-dispersive x-ray spectroscopy (EDX) data shows that the Mn overlayer remains predominately surface localised on both porous and non-porous materials. (paper)

Dielectric materials for use in thin-film capacitors

Science.gov (United States)

Carr, H. E.; Foster, W. D.; Fromhold, A. T., Jr.; Harbuck, T. A.

1969-01-01

Investigation report presents details of dielectric properties of various metals measured at 300 degrees K for thermally evaporated oxides from 300 to 6000 A in thickness. It is relevant to the medium of integrated circuitry.

Valence and conduction band offsets at low-k a-SiO{sub x}C{sub y}:H/a-SiC{sub x}N{sub y}:H interfaces

Energy Technology Data Exchange (ETDEWEB)

King, Sean W., E-mail: sean.king@intel.com; Brockman, Justin; French, Marc; Jaehnig, Milt; Kuhn, Markus [Logic Technology Development, Intel Corporation, Hillsboro, Oregon 97124 (United States); French, Benjamin [Ocotillo Materials Laboratory, Intel Corporation, Chandler, Arizona 85248 (United States)

2014-09-21

In order to understand the fundamental electrical leakage and reliability failure mechanisms in nano-electronic low-k dielectric/metal interconnect structures, we have utilized x-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy to determine the valence and conduction band offsets present at interfaces between non-porous and porous low-k a-SiO{sub x}C{sub y}:H interlayer dielectrics and a-SiC{sub x}N{sub y}:H metal capping layers. The valence band offset for such interfaces was determined to be 2.7±0.2 eV and weakly dependent on the a-SiOC:H porosity. The corresponding conduction band offset was determined to be 2.1±0.2 eV. The large band offsets indicate that intra metal layer leakage is likely dominated by defects and trap states in the a-SiOC:H and a-SiCN:H dielectrics.

DC-bias and visible light effect on dielectric characteristics of La0.5Cr0.5TiO3+δ

Directory of Open Access Journals (Sweden)

Yan Chen

2017-10-01

Full Text Available La0.5Cr0.5TiO3+δ ceramic sample was prepared via traditional solid-state reaction route. Frequency and temperature dependence of dielectric permittivity were studied in the range of 102 ~ 106 Hz and of 77 ~ 360 K, respectively. It was observed that extraordinarily high low-frequency dielectric constants appeared at room temperature, and dielectric relaxation peaks shifted to higher temperature with increasing frequency. In the dc-bias studies, it was also found that the dielectric permittivity had obviously dc-bias dependence in low frequency, but independence as the frequency above 14 kHz. Interestingly, the dielectric characteristics of the sample had obvious light dependence at room temperature within the measured frequency range. The results demonstrate that visible light improves the dielectric properties of the ceramic by means of I–V and complex impedance analysis. Keywords: Ceramics, Dielectric properties, Dc-bias dependence, Visible light dependence

High Dielectric Low Loss Transparent Glass Material Based Dielectric Resonator Antenna with Wide Bandwidth Operation

Science.gov (United States)

Mehmood, Arshad; Zheng, Yuliang; Braun, Hubertus; Hovhannisyan, Martun; Letz, Martin; Jakoby, Rolf

2015-01-01

This paper presents the application of new high permittivity and low loss glass material for antennas. This glass material is transparent. A very simple rectangular dielectric resonator antenna is designed first with a simple microstrip feeding line. In order to widen the bandwidth, the feed of the design is modified by forming a T-shaped feeding. This new design enhanced the bandwidth range to cover the WLAN 5 GHz band completely. The dielectric resonator antenna cut into precise dimensions is placed on the modified microstrip feed line. The design is simple and easy to manufacture and also very compact in size of only 36 × 28 mm. A -10 dB impedance bandwidth of 18% has been achieved, which covers the frequency range from 5.15 GHz to 5.95 GHz. Simulations of the measured return loss and radiation patterns are presented and discussed.

Extrinsic and intrinsic contributions for dielectric behavior of La{sub 2}NiMnO{sub 6} ceramic

Energy Technology Data Exchange (ETDEWEB)

Cao, Zhenzhu, E-mail: czz03@163.com [Chemical Engineering College of Inner Mongolia University of Technology, Hohhot 010051 (China); Liu, Xiaoting; He, Weiyan [Chemical Engineering College of Inner Mongolia University of Technology, Hohhot 010051 (China); Ruan, Xuezheng [Key Laboratory of Inorganic Function Material and Device, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Gao, Yanfang; Liu, Jinrong [Chemical Engineering College of Inner Mongolia University of Technology, Hohhot 010051 (China)

2015-11-15

The influences of electrode material, DC bias and temperature on the electrical and dielectric properties of LNMO ceramic have been investigated using impedance spectroscopy and dielectric measurements. Evidences from dielectric and impedance analysis showed that the giant dielectric constant and its notable tunability originated from extrinsic contribution from interface polarization. Low temperature and high frequency dielectric characterization revealed the low intrinsic dielectric constant.

Low operating voltage InGaZnO thin-film transistors based on Al{sub 2}O{sub 3} high-k dielectrics fabricated using pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Geng, G. Z.; Liu, G. X.; Zhang, Q.; Shan, F. K. [Qingdao University, Qingdao (China); DongEui University, Busan (Korea, Republic of); Lee, W. J.; Shin, B. C. [DongEui University, Busan (Korea, Republic of); Cho, C. R. [Pusan National University, Busan (Korea, Republic of)

2014-05-15

Low-voltage-driven amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) with an Al{sub 2}O{sub 3} dielectric were fabricated on a Si substrate by using pulsed laser deposition. Both Al{sub 2}O{sub 3} and IGZO thin films are amorphous, and the thin films have very smooth surfaces. The Al{sub 2}O{sub 3} gate dielectric exhibits a very low leakage current density of 1.3 x 10{sup -8} A/cm{sup 2} at 5 V and a high capacitance density of 60.9 nF/cm{sup 2}. The IGZO TFT with a structure of Ni/IGZO/Al{sub 2}O{sub 3}/Si exhibits high performance with a low threshold voltage of 1.18 V, a high field effect mobility of 20.25 cm{sup 2}V{sup -1}s{sup -1}, an ultra small subthreshold swing of 87 mV/decade, and a high on/off current ratio of 3 x 10{sup 7}.

Structure and dielectric properties in the radio frequency range of polymer composites based on vanadium dioxide

Directory of Open Access Journals (Sweden)

Kolbunov V.R.

2015-06-01

Full Text Available Polymer composites with active fillers are recently considered to be promising materials for the design of new functional devices with controllable properties and are intensively investigated. Dielectric studies are one of the most effective methods for studying structural features and mechanisms of conductivity formation for this type of two-component systems. The paper presents research results of the dielectric characteristics in the range of radio frequency of 50 kHz — 10 MHz and temperature range of 30—60°C of polyethylene composites of vanadium dioxide with different volume fractions of filler. Two dispersion areas were found: a high-frequency area caused by the Maxwell charge separation on the boundaries of the polyethylene matrix — conductive filler of VI2 crystallites, and a low frequency area associated with the presence of the transition layer at this boundary. The relative permittivity of the composite has a tendency to a decrease in absolute value with increasing temperature. The analysis of the low-frequency dependence of the dielectric constant of the value of the filler’s volume fraction revealed that the investigated composite belongs to two-component statistical mixtures with a transition layer between the components.

Investigation of terbium scandate as an alternative gate dielectric in fully depleted transistors

OpenAIRE

Roeckerath, M.; Lopes, J. M. J.; Durgun Özben, E.; Urban, C.; Schubert, J.; Mantl, S.; Jia, Y.; Schlom, D.G.

2010-01-01

Terbium scandate thin films were deposited by e-gun evaporation on (100) silicon substrates. Rutherford backscattering spectrometry and x-ray diffraction studies revealed homogeneous chemical compositions of the films. A dielectric constant of 26 and CV-curves with small hystereses were measured as well as low leakage current densities of < 1 nA/cm(2). Fully depleted n-type field-effect transistors on thin silicon-on-insulator substrates with terbium scandate gate dielectrics were fabricated ...

Axion-photon conversion in space and in low symmetrical dielectric crystals

International Nuclear Information System (INIS)

Gorelik, V S

2016-01-01

The opportunities of axions detection as the result of axion-photon conversion processes in the space and in low symmetrical dielectric crystals are discussed. In accordance with the modern theory predictions, axions are pseudoscalar vacuum particles having very small (0.001-1.0 meV) rest energy. The possibility of axions conversion into photons and vice-versa processes in vacuum at the presence of outer magnetic field has been analyzed before. Pseudoscalar (axion type) modes are existing in some types of crystals. Polar pseudoscalar lattice and exciton modes in low symmetrical crystals are strongly interacted with axions. In this work, optical excitation of axion-type modes in low symmetrical crystals is proposed for observation of axion - photon conversion processes. Instead of outer magnetic field, the crystalline field of such crystals may be used. The experimental schemes for axion-photon conversion processes observation with recording the secondary emission of luminescence, infrared or Stimulated Raman Scattering in some dielectric crystals are discussed. (paper)

Dielectric properties of ligand-modified gold nanoparticles/SU-8 photopolymer based nanocomposites

KAUST Repository

Toor, Anju; So, Hongyun; Pisano, Albert P.

2017-01-01

This article reports the enhanced dielectric properties of a photodefinable nanocomposite material containing sub–10 nm coated metal nanoparticles (NPs). The surface morphology of the synthesized dodecanethiol-functionalized gold NPs was characterized using the transmission electron microscopy (TEM). We investigated the particle agglomeration and dispersion during the various stages of the nanocomposite synthesis using TEM. Physical properties such as dielectric permittivity and dielectric loss were measured experimentally. The dependence of dielectric permittivity and loss tangent on particle concentration and frequency was studied. Nanocomposite films showed an approximately three times enhancement in average dielectric constant over the polymer base value and an average dielectric loss of 0.09 at 1 kHz, at a filler loading of 10% w/w.

Dielectric properties of ligand-modified gold nanoparticles/SU-8 photopolymer based nanocomposites

KAUST Repository

Toor, Anju

2017-04-15

This article reports the enhanced dielectric properties of a photodefinable nanocomposite material containing sub–10 nm coated metal nanoparticles (NPs). The surface morphology of the synthesized dodecanethiol-functionalized gold NPs was characterized using the transmission electron microscopy (TEM). We investigated the particle agglomeration and dispersion during the various stages of the nanocomposite synthesis using TEM. Physical properties such as dielectric permittivity and dielectric loss were measured experimentally. The dependence of dielectric permittivity and loss tangent on particle concentration and frequency was studied. Nanocomposite films showed an approximately three times enhancement in average dielectric constant over the polymer base value and an average dielectric loss of 0.09 at 1 kHz, at a filler loading of 10% w/w.

Investigation of the dielectric recovery in synthetic air in a high voltage circuit breaker

International Nuclear Information System (INIS)

Seeger, M; Naidis, G; Steffens, A; Nordborg, H; Claessens, M

2005-01-01

The dielectric recovery of an axially blown arc in an experimental set-up based on a conventional HV circuit breaker was investigated both experimentally and theoretically. As a quenching gas, synthetic air was used. The investigated time range was from 10 μs to 10 ms after current zero (CZ). A fast rise in the dielectric strength during the first 100 μs, followed by a plateau and further rise later was observed. The dependences on the breaking current and pressure were determined. The measured dielectric recovery during the first 100 μs after CZ could be reproduced with good accuracy by computational fluid dynamics simulations. From that it could be deduced that the temperature decay in the axis does not depend sensitively on the pressure. The dielectric recovery during the first 100 μs scales therefore mainly with the filling pressure. The plateau in the breakdown characteristic is due to a hot vapour layer from the still evaporating PTFE nozzle surface

Numerical Investigation of Transitional Flow over a Backward Facing Step Using a Low Reynolds Number k-ε Model

DEFF Research Database (Denmark)

Skovgaard, M.; Nielsen, Peter V.

In this paper it is investigated if it is possible to simulate and capture some of the low Reynolds number effects numerically using time averaged momentum equations and a low Reynolds number k-f model. The test case is the larninar to turbulent transitional flow over a backward facing step...

Study of strained-Si p-channel MOSFETs with HfO2 gate dielectric

Science.gov (United States)

Pradhan, Diana; Das, Sanghamitra; Dash, Tara Prasanna

2016-10-01

In this work, the transconductance of strained-Si p-MOSFETs with high-K dielectric (HfO2) as gate oxide, has been presented through simulation using the TCAD tool Silvaco-ATLAS. The results have been compared with a SiO2/strained-Si p-MOSFET device. Peak transconductance enhancement factors of 2.97 and 2.73 has been obtained for strained-Si p-MOSFETs in comparison to bulk Si channel p-MOSFETs with SiO2 and high-K dielectric respectively. This behavior is in good agreement with the reported experimental results. The transconductance of the strained-Si device at low temperatures has also been simulated. As expected, the mobility and hence the transconductance increases at lower temperatures due to reduced phonon scattering. However, the enhancements with high-K gate dielectric is less as compared to that with SiO2.

Raman, dielectric and variable range hopping nature of Gd2O3-doped K0.5N0.5NbO3 piezoelectric ceramics

Directory of Open Access Journals (Sweden)

Mahesh Peddigari

2015-10-01

Full Text Available (K0.5Na0.5NbO3 (KNN + x wt% Gd2O3 (x = 0 -1.5 ceramics have been prepared by conventional solid state reaction method. The effect of Gd2O3 on the structural, microstructural and dielectric properties of KNN ceramics were studied systematically. The effect of Gd2O3 on phase transformation from orthorhombic to psuedocubic structure is explained interms of changes in the internal vibration modes of NbO6 octahedra. The Raman intensity of the stretching mode v1 enhanced and shifted toward higher wavenumber with Gd2O3 concentration, which is attributed to the increase in polarizability and change in the O-Nb-O bond angles. Microstructural analysis revealed that the grain size of the KNN ceramics decreases from 2.26 ± 1.07 μm to 0.35 ± 0.13 μm and becomes homogenous with an increase in Gd2O3 concentration. The frequency dependent dielectric spectra are analyzed by using Havriliak-Negami function. The fitted symmetry parameter and relaxation time (τ are found to be 0.914 and 8.78 × 10−10 ± 5.5 × 10−11 s, respectively for the sample doped with x = 1.0. The addition of Gd2O3 to the KNN shifted the polymorphic phase transition orthorhombic to tetragonal transition temperature (TO-T from 199oC to 85oC with enhanced dielectric permittivity (ε′ = 1139 at 1 MHz. The sample with x = 1.0, shown a high dielectric permittivity (ε′ = 879 and low dielectric loss (<5% in the broad temperature range (-140oC – 150oC with the Curie temperature 307 oC can have the potential for high temperature piezoelectric and tunable RF circuit applications. The temperature dependent AC-conductivity follows the variable range hopping conduction mechanism by obtaining the slope -0.25 from the ln[ln(ρac] versus ln(T graph in the temperature range of 133 K-308 K. The effect of Gd2O3 on the Mott’s parameters such as density of states (N(EF, hopping length (RH, and hopping energy (WH have been discussed.

Synthesis, fabrication and characterization of magnetic and dielectric nanoparticles and nanocomposite films

Science.gov (United States)

Liu, Xiaohua

Materials science is an interdisciplinary field investigating the structure-property relationship in solid-state materials scientifically and technologically. Nanoscience is concerned with the distinctive properties that matter exhibits when confined to physical dimensions on the order of 10-9 meters. At these length scales, behaviors of particles or elaborate structures are often governed by the rules of quantum mechanics in addition to the physical properties associated with the bulk material. The work reported here seeks to employ nanocystals, binary nanocomposites and thin films of materials, to build versatile, functional systems and devices. With a focus on dielectric, ferroelectric, and magnetoelectric performance, a series of materials has been synthesized and different types of nanocomposites have been built. Barium strontium titannate particles at various sizes was developed, aiming at high dielectric constant and low loss at high frequency range. Cobalt ferrite-polymer nanocomposite was fabricated with potential magnetoelectric coupling. Along with synthesis, advanced electron microscopies (TEM, SEM, STEM, EELS) at atomic resolution were employed to thoroughly investigate the crystallinity, morphology and composition. By means of spin-coating and printing techniques, single and multiple layered capacitors featuring improved dielectric performance (high k, low loss, high breakdown voltage, etc.) were developed through a) electrode deposition, b) dielectric layer deposition, and c) parylene evaporation. Such capacitors are further incorporated into electric power converters for LED lighting. Hopefully in the future we can make electronic devices more efficient, sustainable, smaller and cheaper. By advancing our knowledge of nanomaterials, especially those with potential of multifunction, energy efficiency and sustainability, we have strived to push the limits of synthesis, characterization, fabrication and property analysis of nanostructures towards new

Investigation of dielectric breakdown in silica-epoxy nanocomposites using designed interfaces.

Science.gov (United States)

Bell, Michael; Krentz, Timothy; Keith Nelson, J; Schadler, Linda; Wu, Ke; Breneman, Curt; Zhao, Su; Hillborg, Henrik; Benicewicz, Brian

2017-06-01

Adding nano-sized fillers to epoxy has proven to be an effective method for improving dielectric breakdown strength (DBS). Evidence suggests that dispersion state, as well as chemistry at the filler-matrix interface can play a crucial role in property enhancement. Herein we investigate the contribution of both filler dispersion and surface chemistry on the AC dielectric breakdown strength of silica-epoxy nanocomposites. Ligand engineering was used to synthesize bimodal ligands onto 15nm silica nanoparticles consisting of long epoxy compatible, poly(glycidyl methacrylate) (PGMA) chains, and short, π-conjugated, electroactive surface ligands. Surface initiated RAFT polymerization was used to synthesize multiple graft densities of PGMA chains, ultimately controlling the dispersion of the filler. Thiophene, anthracene, and terthiophene were employed as π-conjugated surface ligands that act as electron traps to mitigate avalanche breakdown. Investigation of the synthesized multifunctional nanoparticles was effective in defining the maximum particle spacing or free space length (L f ) that still leads to property enhancement, as well as giving insight into the effects of varying the electronic nature of the molecules at the interface on breakdown strength. Optimization of the investigated variables was shown to increase the AC dielectric breakdown strength of epoxy composites as much as 34% with only 2wt% silica loading. Copyright © 2017 Elsevier Inc. All rights reserved.

Effect of an azo dye (DR1) on the dielectric parameters of a nematic liquid crystal system

International Nuclear Information System (INIS)

Ozder, S.; Okutan, M.; Koeysal, O.; Goektas, H.; San, S.E.

2007-01-01

The dielectric parameters and relaxation properties of azo dye (DR1) doped E7 and pure E7 liquid crystal (LC) have been investigated in a wide frequency range of 10 k-10 MHz through the dielectric spectroscopy method at room temperature. Dielectric anisotropy (Δε) property of the LC changes from the positive type to negative type and dielectric anisotropy values decrease with doping of DR1. The relaxation frequency f r of E7 and E7/DR1 LC was calculated by means of Cole-Cole plots. Influence of bias voltage on the dielectric parameters has also been investigated

Thermal Experimental Analysis for Dielectric Characterization of High Density Polyethylene Nanocomposites

Directory of Open Access Journals (Sweden)

Ahmed Thabet Mohamed

2016-01-01

Full Text Available The importance of nanoparticles in controlling physical properties of polymeric nanocomposite materials leads us to study effects of these nanoparticles on electric and dielectric properties of polymers in industry In this research, the dielectric behaviour of High-Density Polyethylene (HDPE nanocomposites materials that filled with nanoparticles of clay or fumed silica has been investigated at various frequencies (10 Hz-1 kHz and temperatures (20-60°C. Dielectric spectroscopy has been used to characterize ionic conduction, then, the effects of nanoparticles concentration on the dielectric losses and capacitive charge of the new nanocomposites can be stated. Capacitive charge and loss tangent in high density polyethylene nanocomposites are measured by dielectric spectroscopy. Different dielectric behaviour has been observed depending on type and concentration of nanoparticles under variant thermal conditions.

Dielectric and piezoelectric properties of BiFeO3 modified Bi0.5Na0.5TiO3-Bi0.5K0.5TiO3 lead-free piezoelectric ceramics

International Nuclear Information System (INIS)

Zhou Changrong; Liu Xinyu; Li Weizhou

2008-01-01

The (0.82 - x)Bi 0.5 Na 0.5 TiO 3 -0.18Bi 0.5 K 0.5 TiO 3 -xBiFeO 3 (x = 0-0.07) lead-free piezoelectric ceramics were fabricated by a conventional solid-state reaction method and the effect of BiFeO 3 addition on microstructure and electrical properties of the ceramics was investigated. The specimens with x ≤ 0.05 maintained a rhombohedral-tetragonal phase coexistence and changed into a rhombohedral phase when x > 0.05 in crystal structure. The addition of BiFeO 3 caused a promoted grain growth. All the specimens reveal a low-frequency dielectric dispersion in the frequency range of 40-1 MHz. The piezoelectric constant d 33 and the electromechanical coupling factor k p show an obvious improvement by the addition of small amount of BiFeO 3 , which shows optimum values of d 33 = 170 pC/N and k p = 0.366 at x = 0.03. Contrary to the enhancement of piezoelectric properties, Q m decreases with increasing BiFeO 3 content. The mechanisms of intrinsic and extrinsic contributions to the dielectric and piezoelectric responses have been proposed. Intrinsic contributions are from the relative ion/cation shift that preserves the ferroelectric crystal structure. The remaining extrinsic contributions are from the domain-wall motion and point defects

Metallic and 3D-printed dielectric helical terahertz waveguides.

Science.gov (United States)

Vogt, Dominik Walter; Anthony, Jessienta; Leonhardt, Rainer

2015-12-28

We investigate guidance of Terahertz (THz) radiation in metallic and 3D-printed dielectric helical waveguides in the frequency range from 0.2 to 1 THz. Our experimental results obtained from THz time-domain spectroscopy (THz-TDS) measurements are in very good agreement with finite-difference time-domain (FDTD) simulations. We observe single-mode, low loss and low dispersive propagation of THz radiation in metallic helical waveguides over a broad bandwidth. The 3D-printed dielectric helical waveguides have substantially extended the bandwidth of a low loss dielectric tube waveguide as observed from the experimental and simulation results. The high flexibility of the helical design allows an easy incorporation into bench top THz devices.

Dielectric, electrical and infrared studies of γ-Fe2O3 prepared by ...

Indian Academy of Sciences (India)

Unknown

Murthy V R K 1990 Low frequency dielectric properties of ferrites (eds) V R K Murthy and B Viswanatham (New. Delhi: Narosa Publication) Ch. IV, ed. 1. Murthy V R K and Sobhanadri J 1976 J. Phys. Status Solidi. (a)36k 133. Rahman M M and Venkataraman A 2002 J. Therm. Anal. Cal. 68 91. Rane K S, Verenkar V M S and ...

Measurements of Schottky barrier at the low-k SiOC:H/Cu interface using vacuum ultraviolet photoemission spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Guo, X.; Pei, D.; Zheng, H.; Shohet, J. L. [Plasma Processing and Technology Laboratory and Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); King, S. W. [Logic Technology Development, Intel Corporation, Hillsboro, Oregon 97124 (United States); Lin, Y.-H.; Fung, H.-S.; Chen, C.-C. [National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan (China); Nishi, Y. [Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States)

2015-12-07

The band alignment between copper interconnects and their low-k interlayer dielectrics is critical to understanding the fundamental mechanisms involved in electrical leakage in low-k/Cu interconnects. In this work, vacuum-ultraviolet (VUV) photoemission spectroscopy is utilized to determine the potential of the Schottky barrier present at low-k a-SiOC:H/Cu interfaces. By examining the photoemission spectra before and after VUV exposure of a low-k a-SiOC:H (k = 3.3) thin film fabricated by plasma-enhanced chemical-vapor deposition on a polished Cu substrate, it was found that photons with energies of 4.9 eV or greater can deplete accumulated charge in a-SiOC:H films, while VUV photons with energies of 4.7 eV or less, did not have this effect. These critical values were identified to relate the electric potential of the interface barrier between the a-SiOC:H and the Cu layers. Using this method, the Schottky barrier at the low-k a-SiOC:H (k = 3.3)/Cu interface was determined to be 4.8 ± 0.1 eV.

Quantitative approach to relate dielectric constant studies with TSDC studies of 50 MeV Si ion irradiated kapton-H polymide

International Nuclear Information System (INIS)

Quamara, J.K.; Garg, Maneesha; Sridharbabu, Y.; Prabhavathi, T.

2003-01-01

Temperature and frequency dependent dielectric behaviour has been investigated for pristine and swift heavy ion irradiated (Si ion, 50 MeV energy) kapton-H polyimide in the temperature range of 30 to 250 deg C at frequencies 120 Hz, 1 kHz, 10 kHz and 100 kHz respectively. The dielectric relaxation behaviour of the same samples was also studied using thermally stimulated discharge current (TSDC) technique. A quantitative approach is developed using a well-known Clausius Mossotti equation to relate the TSDC findings to the dielectric constant studies. An overall increase in the dielectric constant of the irradiated samples are also in conformity to the TSDC findings. (author)

Enhanced dielectric and electrical properties of annealed PVDF thin film

Science.gov (United States)

Arshad, A. N.; Rozana, M. D.; Wahid, M. H. M.; Mahmood, M. K. A.; Sarip, M. N.; Habibah, Z.; Rusop, M.

2018-05-01

Poly (vinylideneflouride) (PVDF) thin films were annealed at various annealing temperatures ranging from 70°C to 170°C. This study demonstrates that PVDF thin films annealed at temperature of 70°C (AN70) showed significant enhancement in their dielectric constant (14) at frequency of 1 kHz in comparison to un-annealed PVDF (UN-PVDF), dielectric constant (10) at the same measured frequency. As the annealing temperature was increased from 90°C (AN90) to 150°C (AN150), the dielectric constant value of PVDF thin films was observed to decrease gradually to 11. AN70 also revealed low tangent loss (tan δ) value at similar frequency. With respect to its resistivity properties, the values were found to increase from 1.98×104 Ω.cm to 3.24×104 Ω.cm for AN70 and UN-PVDF films respectively. The improved in dielectric constant, with low tangent loss and high resistivity value suggests that 70°C is the favorable annealing temperature for PVDF thin films. Hence, AN70 is a promising film to be utilized for application in electronic devices such as low frequency capacitor.

The stability and dielectric performance of BiNbO{sub 4} prepared by citrate method assisting sintering process

Energy Technology Data Exchange (ETDEWEB)

Zhai, Haifa [Henan Key Laboratory of Photovoltaic Materials, College of Physics and Electronic Engineering, Henan Normal University, Xinxiang, 453007 (China); National Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093 (China); Chen, Bei; Luo, Hongying; Li, Haiqin; Zheng, Liuyang; Yang, Jien; Liu, Hairui; Liu, Zhiyong [Henan Key Laboratory of Photovoltaic Materials, College of Physics and Electronic Engineering, Henan Normal University, Xinxiang, 453007 (China)

2016-09-15

Low-temperature β phase BiNbO{sub 4} powders (denoted as Low-β) were prepared by a citrate method using home-made water-soluble niobium precursors. The stability of Low-β was systematically investigated from the aspects including calcination temperature, incubation time, and stress existing in pellets. Pure Low-β can be obtained between 700 and 750 C and the crystal evolution of Low-β has not completed yet, compared with high-temperature β phase. Low-β is kinetically stable and no phase transition occurs when increasing the incubation time below 750 C. Above 750 C, both the calcination temperature and incubation time can induce the abnormal phase transition from Low-β to α phase; also, stress existing in pellets can effectively activate the phase transition of Low-β. We can conclude that the Low-β is thermodynamically unstable, while in kinetics, Low-β is stable. The dielectric properties of BiNbO{sub 4} ceramics were investigated to analyze the influence of phase of BiNbO{sub 4} powders precursors, especially the effect of phase transition of Low-β. It's found that BiNbO{sub 4} powders firstly calcined at 700 C is the best precursor to prepare dense ceramics with uniform grain size and the dielectric permittivity and dielectric loss of BiNbO{sub 4} ceramics prepared at 1000 C is 56.6 and 0.001 at 10 kHz, respectively. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Improved dielectric properties and grain boundary response in neodymium-doped Y_2_/_3Cu_3Ti_4O_1_2 ceramics

International Nuclear Information System (INIS)

Liang, Pengfei; Yang, Zupei; Chao, Xiaolian

2016-01-01

Rare earth element neodymium was adopted to refine grain and in turn increase the volume of grain boundary of Y_2_/_3Cu_3Ti_4O_1_2 ceramics, which could strongly increase the resistance of grain boundary. Proper amount of Nd substitution in Y_2_/_3_−_xNd_xCu_3Ti_4O_1_2 ceramics could significantly depress the low-frequency dielectric loss. When the doping level is 0.06 and 0.09, the samples exhibited a relatively low dielectric loss (below 0.050 between 0.3 and 50 kHz) and high dielectric constant above 11000 over a wide frequency range from 40 Hz to 100 kHz. Based on the ε′-T plots, dielectric relaxation intensity was substantially weakened by Nd doping so that the temperature stability of dielectric constant was improved obviously. The correlations between low-frequency dielectric loss and the resistance of grain boundary were revealed. After Nd doping, the activation energies for the conduction behavior in grain boundaries were significantly enhanced, and the activation energies for the dielectric relaxation process in grain boundaries were slightly influenced. - Highlights: • Significant decrease in dielectric loss of Y_2_/_3_−_xNd_xCu_3Ti_4O_1_2 ceramics was realized. • The enhanced grain boundary density is responsible for the lowered dielectric loss. • Nd doping could improve the temperature stability of dielectric constant. • Oxygen vacancies contribute to conduction and relaxation process of grain boundaries.

Dielectric polarization in random media

International Nuclear Information System (INIS)

Ramshaw, J.D.

1984-01-01

The theory of dielectric polarization in random media is systematically formulated in terms of response kernels. The primary response kernel K(12) governs the mean dielectric response at the point r 1 to the external electric field at the point r 2 in an infinite system. The inverse of K(12) is denoted by L(12);. it is simpler and more fundamental than K(12) itself. Rigorous expressions are obtained for the effective dielectric constant epsilon( in terms of L(12) and K(12). The latter expression involves the Onsger-Kirkwood function (epsilon(-epsilon 0 (2epsilon(+epsilon 0 )/epsilon 0 epsilon( (where epsilon 0 is an arbitrary reference value), and appears to be new to the random medium context. A wide variety of series representations for epsilon( are generated by means of general perturbation expansions for K(12) and L(12). A discussion is given of certain pitfalls in the theory, most of which are related to the fact that the response kernels are long ranged. It is shown how the dielectric behavior of nonpolar molecular fluids may be treated as a special case of the general theory. The present results for epsilon( apply equally well to other effective phenomenological coefficients of the same generic type, such as thermal and electrical conductivity, magnetic susceptibility, and diffusion coefficients

Existence conditions for bulk large-wavevector waves in metal-dielectric and graphene-dielectric multilayer hyperbolic metamaterials

DEFF Research Database (Denmark)

Zhukovsky, Sergei; Andryieuski, Andrei; Lavrinenko, Andrei

2014-01-01

We theoretically investigate general existence conditions for broadband bulk large-wavevector (high-k) propagating waves (such as volume plasmon polaritons in hyperbolic metamaterials) in arbitrary subwavelength periodic multilayers structures. Treating the elementary excitation in the unit cell...... of the structure as a generalized resonance pole of reflection coefficient and using Bloch's theorem, we derive analytical expressions for the band of large-wavevector propagating solutions. We apply our formalism to determine the high-k band existence in two important cases: the well-known metal-dielectric...

AC Conductivity and Dielectric Properties of Borotellurite Glass

Science.gov (United States)

Taha, T. A.; Azab, A. A.

2016-10-01

Borotellurite glasses with formula 60B2O3-10ZnO-(30 - x)NaF- xTeO2 ( x = 0 mol.%, 5 mol.%, 10 mol.%, and 15 mol.%) have been synthesized by thermal melting. X-ray diffraction (XRD) analysis confirmed that the glasses were amorphous. The glass density ( ρ) was determined by the Archimedes method at room temperature. The density ( ρ) and molar volume ( V m) were found to increase with increasing TeO2 content. The direct-current (DC) conductivity was measured in the temperature range from 473 K to 623 K, in which the electrical activation energy of ionic conduction increased from 0.27 eV to 0.48 eV with increasing TeO2 content from 0 mol.% to 15 mol.%. The dielectric parameters and alternating-current (AC) conductivity ( σ ac) were investigated in the frequency range from 1 kHz to 1 MHz and temperature range from 300 K to 633 K. The AC conductivity and dielectric constant decreased with increasing TeO2 content from 0 mol.% to 15 mol.%.

Nanocomposites of TiO2/cyanoethylated cellulose with ultra high dielectric constants

International Nuclear Information System (INIS)

Madusanka, Nadeesh; Shivareddy, Sai G; Hiralal, Pritesh; Choi, Youngjin; Amaratunga, Gehan A J; Eddleston, Mark D; Oliver, Rachel A

2016-01-01

A novel dielectric nanocomposite containing a high permittivity polymer, cyanoethylated cellulose (CRS) and TiO 2 nanoparticles was successfully prepared with different weight percentages (10%, 20% and 30%) of TiO 2 . The intermolecular interactions and morphology within the polymer nanocomposites were analysed. TiO 2 /CRS nanofilms on SiO 2 /Si wafers were used to form metal–insulator–metal type capacitors. Capacitances and loss factors in the frequency range of 1 kHz–1 MHz were measured. At 1 kHz CRS-TiO 2 nanocomposites exhibited ultra high dielectric constants of 118, 176 and 207 for nanocomposites with 10%, 20% and 30% weight of TiO 2 respectively, significantly higher than reported values of pure CRS (21), TiO 2 (41) and other dielectric polymer-TiO 2 nanocomposite films. Furthermore, all three CRS-TiO 2 nanocomposites show a loss factor <0.3 at 1 kHz and low leakage current densities (10 −6 –10 −7 A cm −2 ). Leakage was studied using conductive atomic force microscopy and it was observed that the leakage is associated with TiO 2 nanoparticles embedded in the CRS polymer matrix. A new class of ultra high dielectric constant hybrids using nanoscale inorganic dielectrics dispersed in a high permittivity polymer suitable for energy management applications is reported. (paper)

Novel organic semiconductors and dielectric materials for high performance and low-voltage organic thin-film transistors

Science.gov (United States)

Yoon, Myung-Han

Two novel classes of organic semiconductors based on perfluoroarene/arene-modified oligothiophenes and perfluoroacyl/acyl-derivatized quaterthiophens are developed. The frontier molecular orbital energies of these compounds are studied by optical spectroscopy and electrochemistry while solid-state/film properties are investigated by thermal analysis, x-ray diffraction, and scanning electron microscopy. Organic thin film transistors (OTFTs) performance parameters are discussed in terms of the interplay between semiconductor molecular energetics and film morphologies/microstructures. For perfluoroarene-thiophene oligomer systems, majority charge carrier type and mobility exhibit a strong correlation with the regiochemistry of perfluoroarene incorporation. In quaterthiophene-based semiconductors, carbonyl-functionalization allows tuning of the majority carrier type from p-type to ambipolar and to n-type. In situ conversion of a p-type semiconducting film to n-type film is also demonstrated. Very thin self-assembled or spin-on organic dielectric films have been integrated into OTFTs to achieve 1 - 2 V operating voltages. These new dielectrics are deposited either by layer-by-layer solution phase deposition of molecular precursors or by spin-coating a mixture of polymer and crosslinker, resulting in smooth and virtually pinhole-free thin films having exceptionally large capacitances (300--700 nF/cm2) and low leakage currents (10 -9 - 10-7 A/cm2). These organic dielectrics are compatible with various vapor- or solution-deposited p- and n-channel organic semiconductors. Furthermore, it is demonstrated that spin-on crosslinked-polymer-blend dielectrics can be employed for large-area/patterned electronics, and complementary inverters. A general approach for probing semiconductor-dielectric interface effects on OTFT performance parameters using bilayer gate dielectrics is presented. Organic semiconductors having p-, n-type, or ambipolar majority charge carriers are grown on

Modeling of leakage currents in high-k dielectrics

International Nuclear Information System (INIS)

Jegert, Gunther Christian

2012-01-01

Leakage currents are one of the major bottlenecks impeding the downscaling efforts of the semiconductor industry. Two core devices of integrated circuits, the transistor and, especially, the DRAM storage capacitor, suffer from the increasing loss currents. In this perspective a fundamental understanding of the physical origin of these leakage currents is highly desirable. However, the complexity of the involved transport phenomena so far has prevented the development of microscopic models. Instead, the analysis of transport through the ultra-thin layers of high-permittivity (high-k) dielectrics, which are employed as insulating layers, was carried out at an empirical level using simple compact models. Unfortunately, these offer only limited insight into the physics involved on the microscale. In this context the present work was initialized in order to establish a framework of microscopic physical models that allow a fundamental description of the transport processes relevant in high-k thin films. A simulation tool that makes use of kinetic Monte Carlo techniques was developed for this purpose embedding the above models in an environment that allows qualitative and quantitative analyses of the electronic transport in such films. Existing continuum approaches, which tend to conceal the important physics behind phenomenological fitting parameters, were replaced by three-dimensional transport simulations at the level of single charge carriers. Spatially localized phenomena, such as percolation of charge carriers across pointlike defects, being subject to structural relaxation processes, or electrode roughness effects, could be investigated in this simulation scheme. Stepwise a self-consistent, closed transport model for the TiN/ZrO 2 material system, which is of outmost importance for the semiconductor industry, was developed. Based on this model viable strategies for the optimization of TiN/ZrO 2 /TiN capacitor structures were suggested and problem areas that may

Modeling of leakage currents in high-k dielectrics

Energy Technology Data Exchange (ETDEWEB)

Jegert, Gunther Christian

2012-03-15

Leakage currents are one of the major bottlenecks impeding the downscaling efforts of the semiconductor industry. Two core devices of integrated circuits, the transistor and, especially, the DRAM storage capacitor, suffer from the increasing loss currents. In this perspective a fundamental understanding of the physical origin of these leakage currents is highly desirable. However, the complexity of the involved transport phenomena so far has prevented the development of microscopic models. Instead, the analysis of transport through the ultra-thin layers of high-permittivity (high-k) dielectrics, which are employed as insulating layers, was carried out at an empirical level using simple compact models. Unfortunately, these offer only limited insight into the physics involved on the microscale. In this context the present work was initialized in order to establish a framework of microscopic physical models that allow a fundamental description of the transport processes relevant in high-k thin films. A simulation tool that makes use of kinetic Monte Carlo techniques was developed for this purpose embedding the above models in an environment that allows qualitative and quantitative analyses of the electronic transport in such films. Existing continuum approaches, which tend to conceal the important physics behind phenomenological fitting parameters, were replaced by three-dimensional transport simulations at the level of single charge carriers. Spatially localized phenomena, such as percolation of charge carriers across pointlike defects, being subject to structural relaxation processes, or electrode roughness effects, could be investigated in this simulation scheme. Stepwise a self-consistent, closed transport model for the TiN/ZrO{sub 2} material system, which is of outmost importance for the semiconductor industry, was developed. Based on this model viable strategies for the optimization of TiN/ZrO{sub 2}/TiN capacitor structures were suggested and problem areas

Studies of low current back-discharge in point-plane geometry with dielectric layer

International Nuclear Information System (INIS)

Jaworek, A.; Rajch, E.; Czech, T.; Lackowski, M

2005-01-01

The paper presents results of spectroscopic investigations of back-discharge generated in the point-plane electrode geometry in air at atmospheric pressure, with the plane covered with fly ash layer. Four forms of the discharges were studied: onset streamers, glow, breakdown streamers and low-current back-arc discharge. Both polarities of the active discharge electrode, positive and negative, were tested. The back discharge is a type of DC electrical discharge, which take place when the passive plane electrode is covered with a dielectric layer. The layer can be made of solid material or a packed bed of dust or powder of low conductivity. The charge produced due to ionisation processes in the vicinity of the active point electrode is accumulated on the dielectric surface, and generates high electric field through this layer. When critical electric field through the layer is attained an electrical breakdown of the layer take place. The point of breakdown becomes a new source of ions of polarity opposite to those generated by the active electrode. The dielectric layer on the passive electrode causes that gaseous discharges such as breakdown streamers or arc start at lower voltages than they could in the case of normal corona discharge. The visual forms of the discharge were recorded and correlated with the current-voltage characteristics and optical emission spectra. Emission spectra of the discharge were measured in the light wavelength range of 200 to 600 nm to get information about excitation and ionisation processes. The light spectra were analysed by monochromator SPM-2 Karl-Zeiss-Jena with diffraction grating of 1302 grooves/mm and photomultiplier R375 (Hamamatsu) and signal preamplifier unit C7319 (Hamamatsu). The spectral analysis showed that the nitrogen molecular bands were dominant, but the emission of negative ions from the dielectric layer material were also detected. The most noticeable light emission in the range from 280 to 490 nm due to second

Yttrium scandate thin film as alternative high-permittivity dielectric for germanium gate stack formation

Energy Technology Data Exchange (ETDEWEB)

Lu, Cimang, E-mail: cimang@adam.t.u-tokyo.ac.jp; Lee, Choong Hyun; Nishimura, Tomonori; Toriumi, Akira [Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Tokyo 113-8656 (Japan); JST, CREST, 7-3-1 Hongo, Tokyo 113-8656 (Japan)

2015-08-17

We investigated yttrium scandate (YScO{sub 3}) as an alternative high-permittivity (k) dielectric thin film for Ge gate stack formation. Significant enhancement of k-value is reported in YScO{sub 3} comparing to both of its binary compounds, Y{sub 2}O{sub 3} and Sc{sub 2}O{sub 3}, without any cost of interface properties. It suggests a feasible approach to a design of promising high-k dielectrics for Ge gate stack, namely, the formation of high-k ternary oxide out of two medium-k binary oxides. Aggressive scaling of equivalent oxide thickness (EOT) with promising interface properties is presented by using YScO{sub 3} as high-k dielectric and yttrium-doped GeO{sub 2} (Y-GeO{sub 2}) as interfacial layer, for a demonstration of high-k gate stack on Ge. In addition, we demonstrate Ge n-MOSFET performance showing the peak electron mobility over 1000 cm{sup 2}/V s in sub-nm EOT region by YScO{sub 3}/Y-GeO{sub 2}/Ge gate stack.

Adjustable threshold-voltage in all-inkjet-printed organic thin film transistor using double-layer dielectric structures

International Nuclear Information System (INIS)

Wu, Wen-Jong; Lee, Chang-Hung; Hsu, Chun-Hao; Yang, Shih-Hsien; Lin, Chih-Ting

2013-01-01

An all-inkjet-printed organic thin film transistor (OTFT) with a double-layer dielectric structure is proposed and implemented in this study. By using the double-layer structure with different dielectric materials (i.e., polyvinylphenol with poly(vinylidene fluoride-co-hexafluoropropylene)), the threshold-voltage of OTFT can be adjusted. The threshold-voltage shift can be controlled by changing the composition of dielectric layers. That is, an enhancement-mode OTFT can be converted to a depletion-mode OTFT by selectively printing additional dielectric layers to form a high-k/low-k double-layer structure. The printed OTFT has a carrier mobility of 5.0 × 10 −3 cm 2 /V-s. The threshold-voltages of the OTFTs ranged between − 13 V and 10 V. This study demonstrates an additional design parameter for organic electronics manufactured using inkjet printing technology. - Highlights: • A double-layer dielectric organic thin film transistor, OTFT, is implemented. • The threshold voltage of OTFT can be configured by the double dielectric structure. • The composition of the dielectric determines the threshold voltage shift. • The characteristics of OTFTs can be adjusted by double dielectric structures

Dielectric properties of (K0.5Na0.5)NbO3-(Bi0.5Li0.5)ZrO3 lead-free ceramics as high-temperature ceramic capacitors

Science.gov (United States)

Yan, Tianxiang; Han, Feifei; Ren, Shaokai; Ma, Xing; Fang, Liang; Liu, Laijun; Kuang, Xiaojun; Elouadi, Brahim

2018-04-01

(1 - x)K0.5Na0.5NbO3- x(Bi0.5Li0.5)ZrO3 (labeled as (1 - x)KNN- xBLZ) lead-free ceramics were fabricated by a solid-state reaction method. A research was conducted on the effects of BLZ content on structure, dielectric properties and relaxation behavior of KNN ceramics. By combining the X-ray diffraction patterns with the temperature dependence of dielectric properties, an orthorhombic-tetragonal phase coexistence was identified for x = 0.03, a tetragonal phase was determined for x = 0.05, and a single rhombohedral structure occurred at x = 0.08. The 0.92KNN-0.08BLZ ceramic exhibits a high and stable permittivity ( 1317, ± 15% variation) from 55 to 445 °C and low dielectric loss (≤ 6%) from 120 to 400 °C, which is hugely attractive for high-temperature capacitors. Activation energies of both high-temperature dielectric relaxation and dc conductivity first increase and then decline with the increase of BLZ, which might be attributed to the lattice distortion and concentration of oxygen vacancies.

High temperature polymer film dielectrics for aerospace power conditioning capacitor applications

Energy Technology Data Exchange (ETDEWEB)

Venkat, Narayanan, E-mail: venkats3@gmail.co [University of Dayton Research Institute (UDRI), Dayton, OH 45469 (United States); Dang, Thuy D. [Air Force Research Laboratory-Nanostructured and Biological Materials Branch (AFRL/RXBN) (United States); Bai Zongwu; McNier, Victor K. [University of Dayton Research Institute (UDRI), Dayton, OH 45469 (United States); DeCerbo, Jennifer N. [Air Force Research Laboratory-Electrical Technology Branch (AFRL/RZPE), Wright-Patterson Air Force Base, OH 45433 (United States); Tsao, B.-H. [University of Dayton Research Institute (UDRI), Dayton, OH 45469 (United States); Stricker, Jeffery T. [Air Force Research Laboratory-Electrical Technology Branch (AFRL/RZPE), Wright-Patterson Air Force Base, OH 45433 (United States)

2010-04-15

Polymer dielectrics are the preferred materials of choice for capacitive energy-storage applications because of their potential for high dielectric breakdown strengths, low dissipation factors and good dielectric stability over a wide range of frequencies and temperatures, despite having inherently lower dielectric constants relative to ceramic dielectrics. They are also amenable to large area processing into films at a relatively lower cost. Air Force currently has a strong need for the development of compact capacitors which are thermally robust for operation in a variety of aerospace power conditioning applications. While such applications typically use polycarbonate (PC) dielectric films in wound capacitors for operation from -55 deg. C to 125 deg. C, future power electronic systems would require the use of polymer dielectrics that can reliably operate up to elevated temperatures in the range of 250-350 deg. C. The focus of this research is the generation and dielectric evaluation of metallized, thin free-standing films derived from high temperature polymer structures such as fluorinated polybenzoxazoles, post-functionalized fluorinated polyimides and fluorenyl polyesters incorporating diamond-like hydrocarbon units. The discussion is centered mainly on variable temperature dielectric measurements of film capacitance and dissipation factor and the effects of thermal cycling, up to a maximum temperature of 350 deg. C, on film dielectric performance. Initial studies clearly point to the dielectric stability of these films for high temperature power conditioning applications, as indicated by their relatively low temperature coefficient of capacitance (TCC) (approx2%) over the entire range of temperatures. Some of the films were also found to exhibit good dielectric breakdown strengths (up to 470 V/mum) and a film dissipation factor of the order of <0.003 (0.3%) at the frequency of interest (10 kHz) for the intended applications. The measured relative dielectric

γ-rays irradiation effects on dielectric properties of Ti/Au/GaAsN Schottky diodes with 1.2%N

Science.gov (United States)

Teffahi, A.; Hamri, D.; Djeghlouf, A.; Abboun Abid, M.; Saidane, A.; Al Saqri, N.; Felix, J. F.; Henini, M.

2018-06-01

Dielectric properties of As grown and irradiated Ti /Au/GaAsN Schottky diodes with 1.2%N are investigated using capacitance/conductance-voltage measurements in 90-290 K temperature range and 50-2000 kHz frequency range. Extracted parameters are interface state density, series resistance, dielectric constant, dielectric loss, tangent loss and ac conductivity. It is shown that exposure to γ-rays irradiation leads to reduction in effective trap density believed to result from radiation-induced traps annulations. An increase in series resistance is attributed to a net doping reduction. Dielectric constant (ε') shows usual step-like transitions with corresponding relaxation peaks in dielectric loss. These peaks shift towards lower temperature as frequency decrease. Temperature dependant ac conductivity followed an Arrhenius relation with activation energy of 153 meV in the 200-290 K temperature range witch correspond to As vacancy. The results indicate that γ-rays irradiation improves the dielectric and electrical properties of the diode due to the defect annealing effect.

Features of dielectric response in PMN-PT ferroelectric ceramics

International Nuclear Information System (INIS)

Guerra, J D S; Araujo, E B; Guarany, C A; Reis, R N; Lima, E C

2008-01-01

In this paper, electrical and structural properties were reported for pyrochlore free (1 - x)[Pb(Mg 1/3 Nb 2/3 )O 3 ] - xPbTiO 3 (PMN-PT) (with 35 mol% PbTiO 3 ) ceramics obtained from fine powders. Dielectric studies were focused on the investigation of the complex dielectric permittivity (ε' - iε'') as a function of frequency and temperature. The effects of the dc applied electric field on dielectric response were also investigated. Results revealed a field dependence dielectric anomaly in the dielectric permittivity curves (ε(T)) in the low dc electric field region, which in turn prevails in the whole analysed frequency interval. To the best of our knowledge, these properties for the PMN-PT ceramic system have not been reported before as in this work. The results were analysed within the framework of the current models found in the literature.

On the room temperature multiferroic BiFeO3: magnetic, dielectric and thermal properties

Science.gov (United States)

Lu, J.; Günther, A.; Schrettle, F.; Mayr, F.; Krohns, S.; Lunkenheimer, P.; Pimenov, A.; Travkin, V. D.; Mukhin, A. A.; Loidl, A.

2010-06-01

Magnetic dc susceptibility between 1.5 and 800 K, ac susceptibility and magnetization, thermodynamic properties, temperature dependence of radio and audio-wave dielectric constants and conductivity, contact-free dielectric constants at mm-wavelengths, as well as ferroelectric polarization are reported for single crystalline BiFeO3. A well developed anomaly in the magnetic susceptibility signals the onset of antiferromagnetic order close to 635 K. Beside this anomaly no further indications of phase or glass transitions are indicated in the magnetic dc and ac susceptibilities down to the lowest temperatures. The heat capacity has been measured from 2 K up to room temperature and significant contributions from magnon excitations have been detected. From the low-temperature heat capacity an anisotropy gap of the magnon modes of the order of 6 meV has been determined. The dielectric constants measured in standard two-point configuration are dominated by Maxwell-Wagner like effects for temperatures T > 300 K and frequencies below 1 MHz. At lower temperatures the temperature dependence of the dielectric constant and loss reveals no anomalies outside the experimental errors, indicating neither phase transitions nor strong spin phonon coupling. The temperature dependence of the dielectric constant was measured contact free at microwave frequencies. At room temperature the dielectric constant has an intrinsic value of 53. The loss is substantial and strongly frequency dependent indicating the predominance of hopping conductivity. Finally, in small thin samples we were able to measure the ferroelectric polarization between 10 and 200 K. The saturation polarization is of the order of 40 μC/cm2, comparable to reports in literature.

Synthesis of titanium oxide nanoparticles using DNA-complex as template for solution-processable hybrid dielectric composites

Energy Technology Data Exchange (ETDEWEB)

Ramos, J.C. [Center for Sustainable Materials Chemistry, 153 Gilbert Hall, Oregon State University, Corvallis, OR (United States); Mejia, I.; Murphy, J.; Quevedo, M. [Department of Materials Science and Engineering, University of Texas at Dallas, Dallas, TX (United States); Garcia, P.; Martinez, C.A. [Engineering and Technology Institute, Autonomous University of Ciudad Juarez, Ciudad Juarez, Chihuahua (Mexico)

2015-09-15

Highlights: • We developed a synthesis method to produce TiO{sub 2} nanoparticles using a DNA complex. • The nanoparticles were anatase phase (~6 nm diameter), and stable in alcohols. • Composites showed a k of 13.4, 4.6 times larger than the k of polycarbonate. • Maximum processing temperature was 90 °C. • Low temperature enables their use in low-voltage, low-cost, flexible electronics. - Abstract: We report the synthesis of TiO{sub 2} nanoparticles prepared by the hydrolysis of titanium isopropoxide (TTIP) in the presence of a DNA complex for solution processable dielectric composites. The nanoparticles were incorporated as fillers in polycarbonate at low concentrations (1.5, 5 and 7 wt%) to produce hybrid dielectric films with dielectric constant higher than thermally grown silicon oxide. It was found that the DNA complex plays an important role as capping agent in the formation and suspension stability of nanocrystalline anatase phase TiO{sub 2} at room temperature with uniform size (∼6 nm) and narrow distribution. The effective dielectric constant of spin-cast polycarbonate thin-films increased from 2.84 to 13.43 with the incorporation of TiO{sub 2} nanoparticles into the polymer host. These composites can be solution processed with a maximum temperature of 90 °C and could be potential candidates for its application in low-cost macro-electronics.

Oxide-nitride-oxide dielectric stacks with Si nanoparticles obtained by low-energy ion beam synthesis

International Nuclear Information System (INIS)

Ioannou-Sougleridis, V; Dimitrakis, P; Vamvakas, V Em; Normand, P; Bonafos, C; Schamm, S; Mouti, A; Assayag, G Ben; Paillard, V

2007-01-01

Formation of a thin band of silicon nanoparticles within silicon nitride films by low-energy (1 keV) silicon ion implantation and subsequent thermal annealing is demonstrated. Electrical characterization of metal-insulator-semiconductor capacitors reveals that oxide/Si-nanoparticles-nitride/oxide dielectric stacks exhibit enhanced charge transfer characteristics between the substrate and the silicon nitride layer compared to dielectric stacks using unimplanted silicon nitride. Attractive results are obtained in terms of write/erase memory characteristics and data retention, indicating the large potential of the low-energy ion-beam-synthesis technique in SONOS memory technology

Performance of dielectric nanocomposites: matrix-free, hairy nanoparticle assemblies and amorphous polymer-nanoparticle blends.

Science.gov (United States)

Grabowski, Christopher A; Koerner, Hilmar; Meth, Jeffrey S; Dang, Alei; Hui, Chin Ming; Matyjaszewski, Krzysztof; Bockstaller, Michael R; Durstock, Michael F; Vaia, Richard A

2014-12-10

Demands to increase the stored energy density of electrostatic capacitors have spurred the development of materials with enhanced dielectric breakdown, improved permittivity, and reduced dielectric loss. Polymer nanocomposites (PNCs), consisting of a blend of amorphous polymer and dielectric nanofillers, have been studied intensely to satisfy these goals; however, nanoparticle aggregates, field localization due to dielectric mismatch between particle and matrix, and the poorly understood role of interface compatibilization have challenged progress. To expand the understanding of the inter-relation between these factors and, thus, enable rational optimization of low and high contrast PNC dielectrics, we compare the dielectric performance of matrix-free hairy nanoparticle assemblies (aHNPs) to blended PNCs in the regime of low dielectric contrast to establish how morphology and interface impact energy storage and breakdown across different polymer matrices (polystyrene, PS, and poly(methyl methacrylate), PMMA) and nanoparticle loadings (0-50% (v/v) silica). The findings indicate that the route (aHNP versus blending) to well-dispersed morphology has, at most, a minor impact on breakdown strength trends with nanoparticle volume fraction; the only exception being at intermediate loadings of silica in PMMA (15% (v/v)). Conversely, aHNPs show substantial improvements in reducing dielectric loss and maintaining charge/discharge efficiency. For example, low-frequency dielectric loss (1 Hz-1 kHz) of PS and PMMA aHNP films was essentially unchanged up to a silica content of 50% (v/v), whereas traditional blends showed a monotonically increasing loss with silica loading. Similar benefits are seen via high-field polarization loop measurements where energy storage for ∼15% (v/v) silica loaded PMMA and PS aHNPs were 50% and 200% greater than respective comparable PNC blends. Overall, these findings on low dielectric contrast PNCs clearly point to the performance benefits of

Tuning the dielectric properties of thiourea analog crystals for efficient nonlinear optical applications

International Nuclear Information System (INIS)

Sabari Girisun, T.C.; Dhanuskodi, S.

2010-01-01

Materials with low dielectric constant have attracted a great deal of interest in the field of nonlinear applications and microelectronic industry. Metal complexes of thiourea with group II transition metals (Zn, Cd) as central atom and period III elements (S, Cl) were synthesized by chemical reaction method and single crystals were grown from aqueous solution by slow evaporation method. By parallel plate capacitor technique, the dielectric response, dissipation factor, ac conductivity and impedance of virgin and metal complexes have been studied in the frequency (100 Hz to 5 MHz) and temperature (303-423 K) ranges. Metal complexes of thiourea with cadmium substitute have a low dielectric constant less than 10. Also the presence of chlorine in the metal complex induces noncentro symmetric structure. Hence the role of group II transition metals and period III elements in tuning the dielectric properties for efficient nonlinear applications has been studied.

A methodology for the preparation of nanoporous polyimide films with low dielectric constants

International Nuclear Information System (INIS)

Jiang Lizhong; Liu Jiugui; Wu Dezhen; Li Hangquan; Jin Riguang

2006-01-01

A method to generate nanoporous polyimide films with low dielectric constants was proposed. The preparation consisted of two steps. Firstly, a polyimide/silica hybrid film was prepared via sol-gel process. Secondly, the hybrid film was treated with hydrofluoric acid to remove the dispersed silica particles, leaving pores with diameters between 20 and 120 nm, depending on the size of silica particles. Both hybrid and porous films were subjected to a variety of characterizations including transmission electron microscopy observation, dielectric constant measurement and tensile strength measurement

Dielectric and AC Conductivity Studies in PPy-Ag Nanocomposites

OpenAIRE

Praveenkumar, K.; Sankarappa, T.; Ashwajeet, J. S.; Ramanna, R.

2015-01-01

Polypyrrole and silver nanoparticles have been synthesized at 277 K by chemical route. Nanoparticles of polypyrrole-silver (PPy-Ag) composites were prepared by mixing polypyrrole and silver nanoparticles in different weight percentages. Dielectric properties as a function of temperature in the range from 300 K to 550 K and frequency in the range from 50 Hz to 1 MHz have been measured. Dielectric constant decreased with increase in frequency and temperature. Dielectric loss decreased with incr...

Investigation of steel to dielectric transition using microminiature eddy-current converter

Directory of Open Access Journals (Sweden)

Malikov Vladimir

2018-01-01

Full Text Available The research aims to develop a microminiature converter for electrical steel investigation. The research topic is considered relevant due to the need for evaluation and forecasting of safe operating life of electric steel products. The authors determined the capability to study steel characteristics at different depths based on variations of eddy-current converter amplitude at the steel-dielectric boundary. A microminiature transformer-type converter was designed, which enables to perform local investigations of ferromagnetic materials using eddy-current method based on local studies of the steel electrical conductivity. Having the designed converter as a basis, a hardware-software complex was built to perform experimental studies of steel at the interface boundary. A system was developed for automated converter relocation above the studied object at a specified velocity. Test results are reported for a specimen with continuous and discrete measurements taken at different frequencies. Response dependence of eddy-current converter was found to demonstrate non-linear behavior at steel to dielectric transition. The effect of gap between the eddy-current converter and the test object is investigated.

Structural and composition investigations at delayered locations of low k integrated circuit device by gas-assisted focused ion beam

Energy Technology Data Exchange (ETDEWEB)

Wang, Dandan, E-mail: dandan.wang@globalfoundries.com; Kee Tan, Pik; Yamin Huang, Maggie; Lam, Jeffrey; Mai, Zhihong [Technology Development Department, GLOBALFOUNDRIES Singapore Pte. Ltd., 60 Woodlands Industrial Park D, Street 2, Singapore 738406 (Singapore)

2014-05-15

The authors report a new delayering technique – gas-assisted focused ion beam (FIB) method and its effects on the top layer materials of integrated circuit (IC) device. It demonstrates a highly efficient failure analysis with investigations on the precise location. After removing the dielectric layers under the bombardment of an ion beam, the chemical composition of the top layer was altered with the reduced oxygen content. Further energy-dispersive x-ray spectroscopy and Fourier transform infrared analysis revealed that the oxygen reduction lead to appreciable silicon suboxide formation. Our findings with structural and composition alteration of dielectric layer after FIB delayering open up a new insight avenue for the failure analysis in IC devices.

Phase Identification and Dielectric Properties of Pb0.94 Ca0.06 TiO3 Ceramics

International Nuclear Information System (INIS)

Khin Thida; Tin Tin Aye; Aye Aye Phyu; Moe Moe Myint; Ko Ko Kyaw Soe

2008-03-01

The ferroelectric materials of Ca (6 mol %) doped PbTiO3 (abbreviated to PCT6) ceamics were prepared by using conventional solid solution method. Phase assignment is identified by XRD technique. The change in capacitance, the variation of dielectric constant and dielectric loss as a function of applied frequency modes (1 kHz-10 kHz)at zero bias voltage of PCT6 ceramics by using Cu and Ag electrodes were investigated.

Effect of donor and acceptor dopants on crystallization, microstructural and dielectric behaviors of barium strontium titanate glass ceramics

Energy Technology Data Exchange (ETDEWEB)

Yadav, Avadhesh Kumar, E-mail: yadav.av11@gmail.com [Department of Physics, Dr. Bheem Rao Ambedkar Government Degree College, Anaugi, Kannauj (India); Gautam, C.R. [Department of Physics, University of Lucknow, Lucknow 226007 (India); Singh, Prabhakar [Department of Physics, Indian Institute of Technology (Banaras Hindu University), Varanasi 221005 (India)

2016-07-05

Bulk transparent barium strontium titanate borosilicate glasses in glass system (65-x)[(Ba{sub 0.6}Sr{sub 0.4}).TiO{sub 3}]-30[2SiO{sub 2}.B{sub 2}O{sub 3}]-5[K{sub 2}O]-x[A{sub 2}O{sub 3}], A = La, Fe (x = 2, 5 and 10) were prepared by rapid melt-quench technique and subsequently, converted into glass ceramics by regulated heat treatment process. The phase identification was carried out by X-ray powder diffraction and their surface morphology was studied by scanning electron microscopy. The dielectric properties were studied by impedance spectroscopic technique. Investigated glass samples were crystallized into major and secondary phases of Ba{sub 1.91}Sr{sub 0.09}TiO{sub 4} and Ba{sub 2}TiSi{sub 2}O{sub 8}, respectively. A very high dielectric constant having value upto 68000 was found in glass ceramic sample BST5K10F. This high value of dielectric constant was attributed to interfacial polarization, which arose due to conductivity difference among semiconducting crystalline phases, conducting grains and insulating grain boundaries. Donor dopant La{sub 2}O{sub 3} and acceptor dopant Fe{sub 2}O{sub 3} play an important role for enhancing crystallization, dielectric constant and retardation of dielectric loss in the samples. Moreover, higher value of dielectric constant and lower value of dielectric loss was found in Fe{sub 2}O{sub 3} doped samples in comparison to La{sub 2}O{sub 3} doped samples. - Highlights: • Bulk transparent barium strontium titanate glasses are successfully prepared. • A very high dielectric constant upto 68000 was found in glass ceramics. • La{sub 2}O{sub 3} and Fe{sub 2}O{sub 3} play role for enhancing value of dielectric constant. • Higher dielectric constant with low dielectric loss was found in Fe{sub 2}O{sub 3} doped sample. • Such glass ceramics may be used in making capacitors for high energy storage.

Enhanced dielectric and ferroelectric characteristics in Ca-modified BaTiO3 ceramics

Directory of Open Access Journals (Sweden)

Xiao Na Zhu

2013-08-01

Full Text Available Synergic modification of BaTiO3 ceramics was investigated by Ca-substitution, and the superior dielectric and ferroelectric properties were determined together with the structure evolution. X-ray diffraction (XRD analysis demonstrated a large solubility limit above x = 0.25 in Ba1−xCaxTiO3 solid solution where the fine grain structure was observed with increasing x. Room temperature dielectric constant as high as 1655 was achieved in the present ceramics together with the significantly reduced dielectric loss of 0.013 (x = 0.20 at 100 kHz, where the Curie temperature kept almost a constant while other two transition temperatures decreased continuously with increasing x. More importantly, the remanent polarization Pr and dielectric strength Eb were significantly enhanced by Ca-substitution, and the best Pr (11.34 μC/cm2 and the highest dielectric strength Eb (75 kV/cm were acquired at x = 0.25. The present ceramics should be very desirable for the applications such as high density energy storage devices.

Comparison of precursors for pulsed metal-organic chemical vapor deposition of HfO2 high-K dielectric thin films

International Nuclear Information System (INIS)

Teren, Andrew R.; Thomas, Reji; He, Jiaqing; Ehrhart, Peter

2005-01-01

Hafnium oxide films were deposited on Si(100) substrates using pulsed metal-organic chemical vapor deposition (CVD) and evaluated for high-K dielectric applications. Three types of precursors were tested: two oxygenated ones, Hf butoxide-dmae and Hf butoxide-mmp, and an oxygen-free one, Hf diethyl-amide. Depositions were carried out in the temperature range of 350-650 deg. C, yielding different microstructures ranging from amorphous to crystalline, monoclinic, films. The films were compared on the basis of growth rate, phase development, density, interface characteristics, and electrical properties. Some specific features of the pulsed injection technique are considered. For low deposition temperatures the growth rate for the amide precursor was significantly higher than for the mixed butoxide precursors. A thickness-dependent amorphous to crystalline phase transition temperature was found for all precursors. There is an increase of the film density along with the deposition temperature from values as low as 5 g/cm 3 at 350 deg. C to values close to the bulk value of 9.7 g/cm 3 at 550 deg. C. Crystallization is observed in the same temperature range for films of typically 10-20 nm thickness. However, annealing studies show that this density increase is not simply related to the crystallization of the films. Similar electrical properties could be observed for all precursors and the dielectric constant of the films reaches values similar to the best values reported for bulk crystalline HfO 2

Cell characteristics of FePt nano-dot memories with a high-k Al2O3 blocking oxide

International Nuclear Information System (INIS)

Lee, Gae Hun; Lee, Jung Min; Yang, Hyung Jun; Song, Yun Heub; Bea, Ji Cheol; Tanaka, Testsu

2012-01-01

The cell characteristics of an alloy FePt nano-dot (ND) charge trapping memory with a high-k dielectric as a blocking oxide was investigated. Adoption of a high-k Al 2 O 3 material as a blocking oxide for the metal nano-dot memory provided a superior scaling of the operation voltage compared to silicon oxide under a similar gate leakage level. For the 40-nm-thick high-k (Al 2 O 3 ) blocking oxide, we confirmed an operation voltage reduction of ∼7 V under the same memory window on for silicon dioxide. Also, this device showed a large memory window of 7.8 V and a low leakage current under 10 -10 A in an area of Φ 0.25 mm. From these results, the use of a dielectric (Al 2 O 3 ) as a blocking oxide for a metal nano-dot device is essential, and a metal nano-dot memory with a high-k dielectric will be one of the candidates for a high-density non-volatile memory device.

Band-gap tunable dielectric elastomer filter for low frequency noise

Science.gov (United States)

Jia, Kun; Wang, Mian; Lu, Tongqing; Zhang, Jinhua; Wang, Tiejun

2016-05-01

In the last decades, diverse materials and technologies for sound insulation have been widely applied in engineering. However, suppressing the noise radiation at low frequency still remains a challenge. In this work, a novel membrane-type smart filter, consisting of a pre-stretched dielectric elastomer membrane with two compliant electrodes coated on the both sides, is presented to control the low frequency noise. Since the stiffness of membrane dominates its acoustic properties, sound transmission band-gap of the membrane filter can be tuned by adjusting the voltage applied to the membrane. The impedance tube experiments have been carried out to measure the sound transmission loss (STL) of the filters with different electrodes, membrane thickness and pre-stretch conditions. The experimental results show that the center frequency of sound transmission band-gap mainly depends on the stress in the dielectric elastomer, and a large band-gap shift (more than 60 Hz) can be achieved by tuning the voltage applied to the 85 mm diameter VHB4910 specimen with pre-stretch {λ }0=3. Based on the experimental results and the assumption that applied electric field is independent of the membrane behavior, 3D finite element analysis has also been conducted to calculate the membrane stress variation. The sound filter proposed herein may provide a promising facility to control low frequency noise source with tonal characteristics.

High-k dielectric composites of poly(2-cyanoethyl vinyl ether) and barium titanate for flexible electronics

Czech Academy of Sciences Publication Activity Database

Piana, Francesco; Pfleger, Jiří; Jambor, R.; Řičica, T.; Macák, J. M.

2017-01-01

Roč. 134, č. 37 (2017), s. 1-10, č. článku 45236. ISSN 0021-8995 R&D Projects: GA TA ČR(CZ) TE01020022; GA MŠk(CZ) LO1507 Institutional support: RVO:61389013 Keywords : composites * dielectric properties * nanocrystals Subject RIV: CG - Electrochemistry OBOR OECD: Electrochemistry (dry cells, batteries, fuel cells, corrosion metals, electrolysis) Impact factor: 1.860, year: 2016

Rectifying the Optical-Field-Induced Current in Dielectrics: Petahertz Diode.

Science.gov (United States)

Lee, J D; Yun, Won Seok; Park, Noejung

2016-02-05

Investigating a theoretical model of the optical-field-induced current in dielectrics driven by strong few-cycle laser pulses, we propose an asymmetric conducting of the current by forming a heterojunction made of two distinct dielectrics with a low hole mass (m_{h}^{*}≪m_{e}^{*}) and low electron mass (m_{e}^{*}≪m_{h}^{*}), respectively. This proposition introduces the novel concept of a petahertz (10^{15}  Hz) diode to rectify the current in the petahertz domain, which should be a key ingredient for the electric signal manipulation of future light-wave electronics. Further, we suggest the candidate dielectrics for the heterojunction.

SFG analysis of the molecular structures at the surfaces and buried interfaces of PECVD ultralow-dielectric constant pSiCOH: Reactive ion etching and dielectric recovery

Science.gov (United States)

Myers, John N.; Zhang, Xiaoxian; Huang, Huai; Shobha, Hosadurga; Grill, Alfred; Chen, Zhan

2017-05-01

Molecular structures at the surface and buried interface of an amorphous ultralow-k pSiCOH dielectric film were quantitatively characterized before and after reactive ion etching (RIE) and subsequent dielectric repair using sum frequency generation (SFG) vibrational spectroscopy and Auger electron spectroscopy. SFG results indicated that RIE treatment of the pSiCOH film resulted in a depletion of ˜66% of the surface methyl groups and changed the orientation of surface methyl groups from ˜47° to ˜40°. After a dielectric recovery process that followed the RIE treatment, the surface molecular structure was dominated by methyl groups with an orientation of ˜55° and the methyl surface coverage at the repaired surface was 271% relative to the pristine surface. Auger depth profiling indicated that the RIE treatment altered the top ˜25 nm of the film and that the dielectric recovery treatment repaired the top ˜9 nm of the film. Both SFG and Auger profiling results indicated that the buried SiCNH/pSiCOH interface was not affected by the RIE or the dielectric recovery process. Beyond characterizing low-k materials, the developed methodology is general and can be used to distinguish and characterize different molecular structures and elemental compositions at the surface, in the bulk, and at the buried interface of many different polymer or organic thin films.

Dipolar cross-linkers for PDMS networks with enhanced dielectric permittivity and low dielectric loss

DEFF Research Database (Denmark)

Bahrt, Frederikke; Daugaard, Anders Egede; Hvilsted, Søren

2013-01-01

-(4-((4-nitrophenyl)diazenyl)phenoxy)-prop-1-yn-1-ylium, with a synthesized silicone compatible azide-functional cross-linker by click chemistry. The thermal, mechanical and electromechanical properties were investigated for PDMS films with 0 to 3.6 wt% of dipole-cross-linker. The relative dielectric permittivity......Dipole grafted cross-linkers were utilized to prepare polydimethylsiloxane (PDMS) elastomers with various chain lengths and with various concentrations of functional cross-linker. The grafted cross-linkers were prepared by reaction of two alkyne-functional dipoles, 1-ethynyl-4-nitrobenzene and 3...

Significance of the double-layer capacitor effect in polar rubbery dielectrics and exceptionally stable low-voltage high transconductance organic transistors.

Science.gov (United States)

Wang, Chao; Lee, Wen-Ya; Kong, Desheng; Pfattner, Raphael; Schweicher, Guillaume; Nakajima, Reina; Lu, Chien; Mei, Jianguo; Lee, Tae Hoon; Wu, Hung-Chin; Lopez, Jeffery; Diao, Ying; Gu, Xiaodan; Himmelberger, Scott; Niu, Weijun; Matthews, James R; He, Mingqian; Salleo, Alberto; Nishi, Yoshio; Bao, Zhenan

2015-12-14

Both high gain and transconductance at low operating voltages are essential for practical applications of organic field-effect transistors (OFETs). Here, we describe the significance of the double-layer capacitance effect in polar rubbery dielectrics, even when present in a very low ion concentration and conductivity. We observed that this effect can greatly enhance the OFET transconductance when driven at low voltages. Specifically, when the polar elastomer poly(vinylidene fluoride-co-hexafluoropropylene) (e-PVDF-HFP) was used as the dielectric layer, despite a thickness of several micrometers, we obtained a transconductance per channel width 30 times higher than that measured for the same organic semiconductors fabricated on a semicrystalline PVDF-HFP with a similar thickness. After a series of detailed experimental investigations, we attribute the above observation to the double-layer capacitance effect, even though the ionic conductivity is as low as 10(-10) S/cm. Different from previously reported OFETs with double-layer capacitance effects, our devices showed unprecedented high bias-stress stability in air and even in water.

Significance of the double-layer capacitor effect in polar rubbery dielectrics and exceptionally stable low-voltage high transconductance organic transistors

Science.gov (United States)

Wang, Chao; Lee, Wen-Ya; Kong, Desheng; Pfattner, Raphael; Schweicher, Guillaume; Nakajima, Reina; Lu, Chien; Mei, Jianguo; Lee, Tae Hoon; Wu, Hung-Chin; Lopez, Jeffery; Diao, Ying; Gu, Xiaodan; Himmelberger, Scott; Niu, Weijun; Matthews, James R.; He, Mingqian; Salleo, Alberto; Nishi, Yoshio; Bao, Zhenan

2015-01-01

Both high gain and transconductance at low operating voltages are essential for practical applications of organic field-effect transistors (OFETs). Here, we describe the significance of the double-layer capacitance effect in polar rubbery dielectrics, even when present in a very low ion concentration and conductivity. We observed that this effect can greatly enhance the OFET transconductance when driven at low voltages. Specifically, when the polar elastomer poly(vinylidene fluoride-co-hexafluoropropylene) (e-PVDF-HFP) was used as the dielectric layer, despite a thickness of several micrometers, we obtained a transconductance per channel width 30 times higher than that measured for the same organic semiconductors fabricated on a semicrystalline PVDF-HFP with a similar thickness. After a series of detailed experimental investigations, we attribute the above observation to the double-layer capacitance effect, even though the ionic conductivity is as low as 10–10 S/cm. Different from previously reported OFETs with double-layer capacitance effects, our devices showed unprecedented high bias-stress stability in air and even in water. PMID:26658331

On the Evaluation of Gate Dielectrics for 4H-SiC Based Power MOSFETs

Directory of Open Access Journals (Sweden)

Muhammad Nawaz

2015-01-01

Full Text Available This work deals with the assessment of gate dielectric for 4H-SiC MOSFETs using technology based two-dimensional numerical computer simulations. Results are studied for variety of gate dielectric candidates with varying thicknesses using well-known Fowler-Nordheim tunneling model. Compared to conventional SiO2 as a gate dielectric for 4H-SiC MOSFETs, high-k gate dielectric such as HfO2 reduces significantly the amount of electric field in the gate dielectric with equal gate dielectric thickness and hence the overall gate current density. High-k gate dielectric further reduces the shift in the threshold voltage with varying dielectric thicknesses, thus leading to better process margin and stable device operating behavior. For fixed dielectric thickness, a total shift in the threshold voltage of about 2.5 V has been observed with increasing dielectric constant from SiO2 (k=3.9 to HfO2 (k=25. This further results in higher transconductance of the device with the increase of the dielectric constant from SiO2 to HfO2. Furthermore, 4H-SiC MOSFETs are found to be more sensitive to the shift in the threshold voltage with conventional SiO2 as gate dielectric than high-k dielectric with the presence of interface state charge density that is typically observed at the interface of dielectric and 4H-SiC MOS surface.

Dielectric Properties of Boron Nitride-Ethylene Glycol (BN-EG) Nanofluids

Science.gov (United States)

Fal, Jacek; Cholewa, Marian; Gizowska, Magdalena; Witek, Adam; ŻyŁa, GaweŁ

2017-02-01

This paper presents the results of experimental investigation of the dielectric properties of ethylene glycol (EG) with various load of boron nitride (BN) nanoparticles. The nanofuids were prepared by using a two-step method on the basis of commercially available BN nanoparticles. The measurements were carried out using the Concept 80 System (NOVOCONTROL Technologies GmbH & Co. KG, Montabaur, Germany) in a frequency range from 10 Hz to 10 MHz and temperatures from 278.15 K to 328.15 K. The frequency-dependent real (ɛ ^' }) and imaginary (ɛ ^' ' }) parts of the complex permittivity (ɛ ^*) and the alternating current (AC) conductivity are presented. Also, the effect of temperature and mass concentrations on the dielectric properties of BN-EG nanofluids are demonstrated. The results show that the most significant increase can be achieved for 20 wt.% of BN nanoparticles at 283.15 K and 288.15 K, that is eleven times larger than in the case of pure EG.

Dielectric properties of BaBi4Ti4O15 ceramics produced by cost-effective chemical method

International Nuclear Information System (INIS)

Chakrabarti, A.; Bera, J.; Sinha, T.P.

2009-01-01

BaBi 4 Ti 4 O 15 , an Aurivillius compound, was synthesized by a cost-effective soft chemical route. The precursor was prepared by precipitating Bi- and Ba-oxalates inside a TiO 2 powder suspension. A phase pure orthorhombic BaBi 4 Ti 4 O 15 was synthesized by heating the precursor powder at 1000 deg. C. The phase formation behavior was investigated using TG-DSC and XRD. Densification behavior of the powder and microstructure development in sintered pellet was examined. Temperature dependent dielectric study of the ceramic has been investigated in the temperature range 300-780 K and frequency range of 1 kHz-1 MHz. The broad dielectric constant peaks at temperature T m was frequency dependent. The dielectric relaxation rate follows the Vogel-Fulcher relation with activation energy=0.2639 eV, relaxation frequency=4.95x10 21 Hz, and freezing temperature=620 K. All these parameters indicate that BaBi 4 Ti 4 O 15 is a relaxor ferroelectric.

Structural, electrical and dielectric properties of nanocrystalline Mg-Zn ferrites

International Nuclear Information System (INIS)

Anis-ur-Rehman, M.; Malik, M.A.; Nasir, S.; Mubeen, M.; Khan, K.; Maqsood, A.

2011-01-01

The nanocrystalline Mg-Zn ferrites having general formula Mg/sub 1-x/Zn/sub x/Fe/sub 2/O/sub 4/ (x=0, 0.1, 0.2, 0.3, 0.4, 0. 5) were prepared by WOWS sol-gel route. All prepared samples were sintered at 700 deg. C for 2 h. X-ray powder diffraction (XRD) technique was used to investigate structural properties of the samples. The crystal structure was found to be spinel. The crystallite size, lattice parameters and porosity of samples were calculated by XRD data analysis as function of zinc concentration. The crystallite size for each sample was calculated using the Scherrer formula considering the most intense (3 1 1) peak and the range obtained was 34-68 nm. The dielectric constant, dielectric loss tangent and AC electrical conductivity of nanocrystalline Mg-Zn ferrites are investigated as a function of frequency. The dielectric constant, dielectric loss tangent increased with increase of Zn concentration. All the electrical properties are explained in accordance with Maxwell Wagner model and K/sub oops/ phenomenological theory. (author)

Structural, photoconductivity, and dielectric studies of polythiophene-tin oxide nanocomposites

Energy Technology Data Exchange (ETDEWEB)

Murugavel, S., E-mail: starin85@gmail.com; Malathi, M., E-mail: mmalathi@vit.ac.in

2016-09-15

Highlights: • Synthesis of polythiophene-tin oxide nanocomposites confirmed by FTIR and EDAX. • SEM shows SnO{sub 2} nanoparticles embedded within polythiophene matrix. • Stability and isoelectric point suggest nanoparticle–matrix interaction. • High dielectric constant due to high Maxwell–Wagner interfacial polarization. - Abstract: Polythiophene-tinoxide (PT-SnO{sub 2}) nanocomposites were prepared by in situ chemical oxidative polymerization, in the presence of various concentrations of SnO{sub 2} nanoparticles. Samples were characterized by X-ray diffraction, Fourier-transform infrared spectroscopy, thermogravimetric analysis, X-ray photoelectron spectroscopy and Zeta potential measurements. Morphologies and elemental compositions were investigated by transmission electron microscopy, field-emission scanning electron microscopy and energy-dispersive X-ray spectroscopy. The photoconductivity of the nanocomposites was studied by field-dependent dark and photo conductivity measurements. Their dielectric properties were investigated using dielectric spectroscopy, in the frequency range of 1kHz–1 MHz. The results indicated that the SnO{sub 2} nanoparticles in the PT-SnO{sub 2} nanocomposite were responsible for its enhanced dielectric performance.

Investigation of terbium scandate as an alternative gate dielectric in fully depleted transistors

Science.gov (United States)

Roeckerath, M.; Lopes, J. M. J.; Özben, E. Durǧun; Urban, C.; Schubert, J.; Mantl, S.; Jia, Y.; Schlom, D. G.

2010-01-01

Terbium scandate thin films were deposited by e-gun evaporation on (100) silicon substrates. Rutherford backscattering spectrometry and x-ray diffraction studies revealed homogeneous chemical compositions of the films. A dielectric constant of 26 and CV-curves with small hystereses were measured as well as low leakage current densities of <1 nA/cm2. Fully depleted n-type field-effect transistors on thin silicon-on-insulator substrates with terbium scandate gate dielectrics were fabricated with a gate-last process. The devices show inverse subthreshold slopes of 80 mV/dec and a carrier mobility for electrons of 225 cm2/V•s was extracted.

Microstructure and enhanced dielectric properties of yttrium and zirconium co-doped CaCu{sub 3}Ti{sub 4}O{sub 12} ceramics

Energy Technology Data Exchange (ETDEWEB)

Xu, Zunping, E-mail: xzp16213@163.com [Faculty of Materials and Energy, Southwest University, Chongqing 400715 (China); Qiang, Hua [College of Electromechanical Engineering, Chongqing College of Humanities, Science and Technology, Chongqing 401524 (China); Chen, Yi; Chen, Zhiqian [Faculty of Materials and Energy, Southwest University, Chongqing 400715 (China)

2017-04-15

CaCu{sub 3}Ti{sub 4}O{sub 12} (CCTO) ceramics doped with Y{sub 2}O{sub 3}, ZrO{sub 2}, and (Y{sub 2}O{sub 3}+ZrO{sub 2}) were prepared by the citrate-nitrate combustion derived powders in order to investigate the effect of dopants on the microstructure and electrical properties. The results showed that giant dielectric response was enhanced by co-doping of Y{sup 3+} and Zr{sup 4+} ions at the Ti site. Y{sub 2}O{sub 3} and ZrO{sub 2} additive can inhibit the grain growth. Compared with other samples, (Y{sub 2}O{sub 3}+ZrO{sub 2}) co-doped ceramics exhibit a dense and homogenous fine-grained microstructure. A much better temperature and frequency stability of dielectric properties were realized in these ceramics. The dielectric loss (tan δ) < 0.05 in the frequency range of 200 Hz–60 kHz at room temperature, and in the temperature range of 15–72 °C at 10 kHz was successfully accomplished in (Y{sub 2}O{sub 3}+ZrO{sub 2}) co-doped CCTO ceramics. Low tan δ ∼0.039 and high dielectric constant (ε{sub r} ∼10196) were observed at room temperature and 10 kHz for the above ceramic samples, and the characteristic frequency shifts to higher frequency with increasing measuring temperature. The present results indicate that (Y{sub 2}O{sub 3}+ZrO{sub 2}) co-doping may improve the dielectric properties and increase the grain boundary resistance of CCTO. - Highlights: • Y and Zr co-doped CCTO exhibits a dense and homogenous fine-grained microstructure. • Y and Zr co-doped CCTO performs a lower dielectric loss in wide-range of frequency. • Temperature and frequency stability of dielectric properties were greatly enhanced.

Low dielectric loss in nano-Li-ferrite spinels prepared by sol–gel ...

Indian Academy of Sciences (India)

... Refresher Courses · Symposia · Live Streaming. Home; Journals; Bulletin of Materials Science; Volume 39; Issue 1. Low dielectric loss in nano-Li-ferrite spinels prepared by sol–gel auto-combustion technique. Mamata Maisnam Nandeibam Nilima Maisnam Victory Sumitra Phanjoubam. Volume 39 Issue 1 February 2016 ...

Dielectric material options for integrated capacitors

NARCIS (Netherlands)

Ruhl, G.; Lehnert, W.; Lukosius, M.; Wenger, C.; Baristiran Kaynak, C.; Blomberg, T.; Haukka, S.; Baumann, P.K.; Besling, W.F.A.; Roest, A.L.; Riou, B.; Lhostis, S.; Halimaou, A.; Roozeboom, F.; Langereis, E.; Kessels, W.M.M.; Zauner, A.; Rushworth, S.A.

2014-01-01

Future MIM capacitor generations will require significantly increased specific capacitances by utilization of high-k dielectric materials. In order to achieve high capacitance per chip area, these dielectrics have to be deposited in three-dimensional capacitor structures by ALD or AVD (atomic vapor

Evaluation of the effects of thermal annealing temperature and high-k dielectrics on amorphous InGaZnO thin films by using pseudo-MOS transistors

International Nuclear Information System (INIS)

Lee, Se-Won; Cho, Won-Ju

2012-01-01

The effects of annealing temperatures and high-k gate dielectric materials on the amorphous In-Ga-Zn-O thin-film transistors (a-IGZO TFTs) were investigated using pseudo-metal-oxide semiconductor transistors (Ψ-MOSFETs), a method without conventional source/drain (S/D) layer deposition. Annealing of the a-IGZO film was carried out at 150 - 900 .deg. C in a N 2 ambient for 30 min. As the annealing temperature was increased, the electrical characteristics of Ψ-MOSFETs on a-IGZO were drastically improved. However, when the annealing temperature exceeded 700 .deg. C, a deterioration of the MOS parameters was observed, including a shift of the threshold voltage (V th ) in a negative direction, an increase in the subthreshold slope (SS) and hysteresis, a decrease in the field effect mobility (μ FE ), an increase in the trap density (N t ), and a decrease in the on/off ratio. Meanwhile, the high-k gate dielectrics enhanced the performance of a-IGZO Ψ-MOSFETs. The ZrO 2 gate dielectrics particularly exhibited excellent characteristics in terms of SS (128 mV/dec), μ FE (10.2 cm -2 /V·s), N t (1.1 x 10 12 cm -2 ), and on/off ratio (5.3 x 10 6 ). Accordingly, the Ψ-MOSFET structure is a useful method for rapid evaluation of the effects of the process and the material on a-IGZO TFTs without a conventional S/D layer deposition.

Ozone Production Using Pulsed Dielectric Barrier Discharge in Oxygen

OpenAIRE

Samaranayake, W. J. M.; Miyahara, Y.; Namihira, T.; Katsuki, S.; Hackam, R.; Akiyama, H.; ナミヒラ, タカオ; カツキ, スナオ; アキヤマ, ヒデノリ; 浪平, 隆男; 勝木, 淳; 秋山, 秀典

2000-01-01

The production of ozone was investigated using a dielectric barrier discharge in oxygen, and employing short-duration pulsed power. The dependence of the ozone concentration (parts per million, ppm) and ozone production yield (g(O3)/kWh) on the peak pulsed voltage (17.5 to 57.9 kV) and the pulse repetition rate (25 to 400 pulses/s, pps) were investigated. In the present study, the following parameters were kept constant: a pressure of 1.01×105 Pa, a temperature of 26±4°C a gas flow rate of 3....

Ferroelectric polymer dielectrics: Emerging materials for future electrostatic energy storage applications

Science.gov (United States)

Panda, Maheswar

2018-05-01

In this manuscript, the dielectric behavior of a variety of ferroelectric polymer dielectrics (FPD), which may bethe materials for future electrostatic energy storage application shave been discussed. The variety of polymer dielectrics, comprising of ferroelectric polymer[polyvinylidene fluoride (PVDF)]/non-polarpolymer [low density polyethylene (LDPE)] and different sizes of metal particles (Ni, quasicrystal of Al-Cu-Fe) as filler, were prepared through different process conditions (cold press/hot press) and are investigated experimentally. Very high values of effective dielectric constants (ɛeff) with low loss tangent (Tan δ) were observed forall the prepared FPD at their respective percolation thresholds (fc). The enhancement of ɛeff and Tan δ at the insulator to metal transition (IMT) is explained through the boundary layer capacitor effect and the percolation theory respectively. The non-universal fc/critical exponents across the IMT have been explained through percolation theory andis attributed to the fillerparticle size& shape, interaction between the components, method of their preparation, adhesiveness, connectivity and homogeneity, etc. of the samples. Recent results on developed FPD with high ɛeff and low Tan δ prepared through cold press have proven themselves to be the better candidates for low frequency and static dielectric applications.

Slots in dielectric image line as mode launchers and circuit elements

Science.gov (United States)

Solbach, K.

1981-01-01

A planar resonator model is used to investigate slots in the ground plane of dielectric image lines. An equivalent circuit representation of the slot discontinuity is obtained, and the launching efficiency of the slot as a mode launcher is analyzed. Slots are also shown to be useful in the realization of dielectric image line array antennas. It is found that the slot discontinuity can be shown as a T-junction of the dielectric image line and a metal waveguide. The launching efficiency is found to increase with the dielectric constant of the dielectric image line, exhibiting a maximum value for guides whose height is slightly less than half a wavelength in the dielectric medium. The measured launching efficiencies of low permittivity dielectric image lines are found to be in good agreement with calculated values

Experimental Investigation of an X-Band Tunable Dielectric Accelerating Structure

CERN Document Server

Kanareykin, Alex; Karmanenko, Sergei F; Nenasheva, Elisaveta; Power, John G; Schoessow, Paul; Semenov, Alexei

2005-01-01

Experimental study of a new scheme to tune the resonant frequency for dielectric based accelerating structure (driven either by the wakefield of a beam or an external rf source) is underway. The structure consists of a single layer of conventional dielectric surrounded by a very thin layer of ferroelectric material situated on the outside. Carefully designed electrodes are attached to a thin layer of ferroelectric material. A DC bias can be applied to the electrodes to change the permittivity of the ferroelectric layer and therefore, the dielectric overall resonant frequency can be tuned. In this paper, we present the test results for an 11.424 GHz rectangular DLA prototype structure that the ferroelectric material's dielectric constant of 500 and show that a frequency tuning range of 2% can be achieved. If successful, this scheme would compensate for structure errors caused by ceramic waveguide machining tolerances and dielectric constant heterogeneity.

Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high- k metal gate NMOSFET with kMC TDDB simulations

International Nuclear Information System (INIS)

Xu Hao; Yang Hong; Luo Wei-Chun; Xu Ye-Feng; Wang Yan-Rong; Tang Bo; Wang Wen-Wu; Qi Lu-Wei; Li Jun-Feng; Yan Jiang; Zhu Hui-Long; Zhao Chao; Chen Da-Peng; Ye Tian-Chun

2016-01-01

The thickness effect of the TiN capping layer on the time dependent dielectric breakdown (TDDB) characteristic of ultra-thin EOT high- k metal gate NMOSFET is investigated in this paper. Based on experimental results, it is found that the device with a thicker TiN layer has a more promising reliability characteristic than that with a thinner TiN layer. From the charge pumping measurement and secondary ion mass spectroscopy (SIMS) analysis, it is indicated that the sample with the thicker TiN layer introduces more Cl passivation at the IL/Si interface and exhibits a lower interface trap density. In addition, the influences of interface and bulk trap density ratio N it / N ot are studied by TDDB simulations through combining percolation theory and the kinetic Monte Carlo (kMC) method. The lifetime reduction and Weibull slope lowering are explained by interface trap effects for TiN capping layers with different thicknesses. (paper)

Dielectric spectroscopy in aqueous solutions of paracetamol over the frequency range of 20 Hz to 2 MHz at 293.15 K temperature

Science.gov (United States)

Pandit, T. R.; Rana, V. A.

2018-05-01

Frequency domain dielectric relaxation spectroscopy plays an important role in the study of pharmaceutical drug molecules. The complex relative dielectric permittivity ɛ*(ω) = ɛ' - j ɛ" of aqueous solutions of paracetamol in the frequency range of 20 Hz to 2 MHz at a temperature range of 293.15 K are measured with the help of Agilent precision LCR meter E4980A along with four terminal liquid test fixture Agilent 16452A. Data of complex relative permittivity are used to calculate loss tangent for all concentrations of paracetamol in distilled water. Electrode polarization relaxation time has been calculated for all solutions. Effect of variation of concentrations of paracetamol in distilled water on these dielectric parameters is discussed.

Sintering and dielectric properties of a technical porcelain prepared from economical natural raw materials

Directory of Open Access Journals (Sweden)

S. Kasrani

Full Text Available Abstract In this study, the production of a technical porcelain, for the ceramic dielectric applications by using economical natural raw materials, was investigated. The basic porcelain composition was selected consisting of 30 wt% kaolin, 45 wt% potash-feldspar and 25 wt% quartz. The obtained phases in the sintered samples were investigated by X-ray diffraction, Fourier transform infrared spectroscopy analysis, and scanning electron microscopy images. It has been confirmed by these techniques that the main crystalline phases were quartz and mullite. Dielectric measurements of technical porcelains have been carried out at 1 kHz from room temperature to 200 °C. The dielectric constant, loss factor, dielectric loss tangent, and resistivity of the porcelain sample sintered at 1160 °C were 22-25, 0.32-1.80, 0.006-0.07, and 0.2-9 x 1013 Ω.cm, respectively. The value of dielectric constant was significantly high when compared to that of conventional porcelains which did not exceed generally 9.

Sintering and dielectric properties of a technical porcelain prepared from economical natural raw materials

Energy Technology Data Exchange (ETDEWEB)

Kasrani, S.; Harabi, A.; Barama, S.-E.; Foughali, L.; Benhassine, M. T., E-mail: souad478@yahoo.fr, E-mail: harabi52@gmail.com, E-mail: sebarama@usa.com, E-mail: foughali_lazhar@yahoo.fr, E-mail: mtb25dz@gmail.com [Ceramics Lab. Mentouri University of Constantine (Algeria); Aldhayan, D.M., E-mail: aldhayan@ksu.edu.sa [Chemistry Department, Riyadh, King Saud University (Saudi Arabia)

2016-10-15

In this study, the production of a technical porcelain, for the ceramic dielectric applications by using economical natural raw materials, was investigated. The basic porcelain composition was selected consisting of 30 wt% kaolin, 45 wt% potash-feldspar and 25 wt% quartz. The obtained phases in the sintered samples were investigated by X-ray diffraction, Fourier transform infrared spectroscopy analysis, and scanning electron microscopy images. It has been confirmed by these techniques that the main crystalline phases were quartz and mullite. Dielectric measurements of technical porcelains have been carried out at 1 kHz from room temperature to 200 °C. The dielectric constant, loss factor, dielectric loss tangent, and resistivity of the porcelain sample sintered at 1160 °C were 22-25, 0.32-1.80, 0.006-0.07, and 0.2-9 x 10{sup 13} Ω.cm, respectively. The value of dielectric constant was significantly high when compared to that of conventional porcelains which did not exceed generally 9. (author)

Sintering and dielectric properties of a technical porcelain prepared from economical natural raw materials

International Nuclear Information System (INIS)

Kasrani, S.; Harabi, A.; Barama, S.-E.; Foughali, L.; Benhassine, M. T.; Aldhayan, D.M.

2016-01-01

In this study, the production of a technical porcelain, for the ceramic dielectric applications by using economical natural raw materials, was investigated. The basic porcelain composition was selected consisting of 30 wt% kaolin, 45 wt% potash-feldspar and 25 wt% quartz. The obtained phases in the sintered samples were investigated by X-ray diffraction, Fourier transform infrared spectroscopy analysis, and scanning electron microscopy images. It has been confirmed by these techniques that the main crystalline phases were quartz and mullite. Dielectric measurements of technical porcelains have been carried out at 1 kHz from room temperature to 200 °C. The dielectric constant, loss factor, dielectric loss tangent, and resistivity of the porcelain sample sintered at 1160 °C were 22-25, 0.32-1.80, 0.006-0.07, and 0.2-9 x 10 13 Ω.cm, respectively. The value of dielectric constant was significantly high when compared to that of conventional porcelains which did not exceed generally 9. (author)

Effect of B-site substitution of complex ions on dielectric and piezoelectric properties in (Bi1/2Na1/2)TiO3 piezoelectric ceramics

International Nuclear Information System (INIS)

Zhou Changrong; Liu Xinyu

2008-01-01

The effect of B-site substitution of complex ions on dielectric and piezoelectric properties in (Bi 1/2 Na 1/2 )Ti 1-x (Zn 1/3 Nb 2/3 ) x O 3 (BNTZN-100x) lead-free piezoelectric ceramics was investigated. X-ray diffraction analysis shows that the materials are mono-perovskite phase. The morphotropic phase boundary (MPB) of BNTZN-100x ceramics between rhombohedral and tetragonal locates in the range of 0.5% ≤ x ≤ 2.0%. Temperature dependence of dielectric constant shows that these compounds are relaxor ferroelectrics. The compositions near the MPB exhibit relatively high piezoelectric properties. The piezoelectric constant (d 33 ) and the electromechanical coupling factor (k t ) show the maximum values of d 33 = 97 pC N -1 and k t = 0.46 at x = 2.0% and x = 1.0%, respectively. The BNTZN-100x ceramics are good candidate for use as ultrasonic transducer ceramics for high anisotropic with high k t value and low k p value

Plasma polymerized high energy density dielectric films for capacitors

Science.gov (United States)

Yamagishi, F. G.

1983-01-01

High energy density polymeric dielectric films were prepared by plasma polymerization of a variety of gaseous monomers. This technique gives thin, reproducible, pinhole free, conformable, adherent, and insoluble coatings and overcomes the processing problems found in the preparation of thin films with bulk polymers. Thus, devices are prepared completely in a vacuum environment. The plasma polymerized films prepared all showed dielectric strengths of greater than 1000 kV/cm and in some cases values of greater than 4000 kV/cm were observed. The dielectric loss of all films was generally less than 1% at frequencies below 10 kHz, but this value increased at higher frequencies. All films were self healing. The dielectric strength was a function of the polymerization technique, whereas the dielectric constant varied with the structure of the starting material. Because of the thin films used (thickness in the submicron range) surface smoothness of the metal electrodes was found to be critical in obtaining high dielectric strengths. High dielectric strength graft copolymers were also prepared. Plasma polymerized ethane was found to be thermally stable up to 150 C in the presence of air and 250 C in the absence of air. No glass transitions were observed for this material.

Dielectric and impedance spectral characteristics of bulk ZnIn2Se4

Science.gov (United States)

El-Nahass, M. M.; Attia, A. A.; Salem, G. F.; Ali, H. A. M.; Ismail, M. I.

2014-02-01

The frequency and temperature dependence of ac conductivity, dielectric constant and dielectric loss of ZnIn2Se4 in a pellet form were investigated in the frequency range of 102-106 Hz and temperature range of 293-356 K. The behavior of ac conductivity was interpreted by the correlated barrier hopping (CBH) model. Temperature dependence of ac conductivity indicates that ac conduction is a thermally activated process. The density of localized states N(EF) and ac activation energy were estimated for various frequencies. Dielectric constant and dielectric loss showed a decrease with increasing frequency and an increase with increasing in temperature. The frequency dependence of real and imaginary parts of the complex impedance was investigated. The relaxation time decreases with the increase in temperature. The impedance spectrum exhibits the appearance of the single semicircular arc. The radius of semicircular arcs decreases with increasing temperature which suggests a mechanism of temperature-dependent on relaxation.

Structural-optical study of high-dielectric-constant oxide films

Energy Technology Data Exchange (ETDEWEB)

Losurdo, M. [Institute of Inorganic Methodologies and Plasmas, IMIP-CNR, Department of Chemistry and INSTM Universita di bari, Via Orabona 4, 70126 Bari (Italy)]. E-mail: maria.losurdo@ba.imip.cnr.it; Giangregorio, M.M. [Institute of Inorganic Methodologies and Plasmas, IMIP-CNR, Department of Chemistry and INSTM Universita di bari, Via Orabona 4, 70126 Bari (Italy); Luchena, M. [Institute of Inorganic Methodologies and Plasmas, IMIP-CNR, Department of Chemistry and INSTM Universita di bari, Via Orabona 4, 70126 Bari (Italy); Capezzuto, P. [Institute of Inorganic Methodologies and Plasmas, IMIP-CNR, Department of Chemistry and INSTM Universita di bari, Via Orabona 4, 70126 Bari (Italy); Bruno, G. [Institute of Inorganic Methodologies and Plasmas, IMIP-CNR, Department of Chemistry and INSTM Universita di bari, Via Orabona 4, 70126 Bari (Italy); Toro, R.G. [Dipartimento di Scienze Chimiche, Universita di Catania, and INSTM-UdR Catania, Viale A. Doria 6, I-95125 Catania (Italy); Malandrino, G. [Dipartimento di Scienze Chimiche, Universita di Catania, and INSTM-UdR Catania, Viale A. Doria 6, I-95125 Catania (Italy); Fragala, I.L. [Dipartimento di Scienze Chimiche, Universita di Catania, and INSTM-UdR Catania, Viale A. Doria 6, I-95125 Catania (Italy); Nigro, R. Lo [Istituto di Microelettronica e Microsistemi, IMM-CNR, Stradale Primosole 50, I-95121 Catania (Italy)

2006-10-31

High-k polycrystalline Pr{sub 2}O{sub 3} and amorphous LaAlO{sub 3} oxide thin films deposited on Si(0 0 1) are studied. The microstructure is investigated using X-ray diffraction and scanning electron microscopy. Optical properties are determined in the 0.75-6.5 eV photon energy range using spectroscopic ellipsometry. The polycrystalline Pr{sub 2}O{sub 3} films have an optical gap of 3.86 eV and a dielectric constant of 16-26, which increases with film thickness. Similarly, very thin amorphous LaAlO{sub 3} films have the optical gap of 5.8 eV, and a dielectric constant below 14 which also increases with film thickness. The lower dielectric constant compared to crystalline material is an intrinsic characteristic of amorphous films.

Graphene/Pentacene Barristor with Ion-Gel Gate Dielectric: Flexible Ambipolar Transistor with High Mobility and On/Off Ratio.

Science.gov (United States)

Oh, Gwangtaek; Kim, Jin-Soo; Jeon, Ji Hoon; Won, EunA; Son, Jong Wan; Lee, Duk Hyun; Kim, Cheol Kyeom; Jang, Jingon; Lee, Takhee; Park, Bae Ho

2015-07-28

High-quality channel layer is required for next-generation flexible electronic devices. Graphene is a good candidate due to its high carrier mobility and unique ambipolar transport characteristics but typically shows a low on/off ratio caused by gapless band structure. Popularly investigated organic semiconductors, such as pentacene, suffer from poor carrier mobility. Here, we propose a graphene/pentacene channel layer with high-k ion-gel gate dielectric. The graphene/pentacene device shows both high on/off ratio and carrier mobility as well as excellent mechanical flexibility. Most importantly, it reveals ambipolar behaviors and related negative differential resistance, which are controlled by external bias. Therefore, our graphene/pentacene barristor with ion-gel gate dielectric can offer various flexible device applications with high performances.

Aging phenomena of chitosan and chitosan-diclofenac sodium system detected by low-frequency dielectric spectroscopy.

Science.gov (United States)

Bodek, K H; Bak, G W

1999-09-01

The use of natural polymers for design of dosage form has received considerable attention recently, especially from the safety point of view. Among these polymers, chitosan shows very interesting biological, chemical and physical properties which makes it possible to use chitosan for various pharmaceutical applications. Microcrystalline chitosan (MCCh) is a special multifunctional polymeric material existing in the form of either of gelatinous water dispersion or a powder. Thermal aging of chitosan and chitosan-diclofenac sodium mixture have been studied using low-frequency dielectric measurements. The aging was carried out by annealing in ambient atmosphere in the temperature range between 25 degrees C and 100 degrees C. The dielectric losses in the aged samples proved to decrease by about one order of magnitude. The additional measurements of molecular weight distribution and infrared absorption were also carried out for better understanding of nature of the ageing phenomena. Partial evacuation of water, cross-linking and improvement of structural order may be suggested to be a result of thermal aging of the investigated materials.

Casimir free energy of dielectric films: classical limit, low-temperature behavior and control.

Science.gov (United States)

Klimchitskaya, G L; Mostepanenko, V M

2017-07-12

The Casimir free energy of dielectric films, both free-standing in vacuum and deposited on metallic or dielectric plates, is investigated. It is shown that the values of the free energy depend considerably on whether the calculation approach used neglects or takes into account the dc conductivity of film material. We demonstrate that there are material-dependent and universal classical limits in the former and latter cases, respectively. The analytic behavior of the Casimir free energy and entropy for a free-standing dielectric film at low temperature is found. According to our results, the Casimir entropy goes to zero when the temperature vanishes if the calculation approach with neglected dc conductivity of a film is employed. If the dc conductivity is taken into account, the Casimir entropy takes the positive value at zero temperature, depending on the parameters of a film, i.e. the Nernst heat theorem is violated. By considering the Casimir free energy of SiO 2 and Al 2 O 3 films deposited on a Au plate in the framework of two calculation approaches, we argue that physically correct values are obtained by disregarding the role of dc conductivity. A comparison with the well known results for the configuration of two parallel plates is made. Finally, we compute the Casimir free energy of SiO 2 , Al 2 O 3 and Ge films deposited on high-resistivity Si plates of different thicknesses and demonstrate that it can be positive, negative and equal to zero. The effect of illumination of a Si plate with laser light is considered. Possible applications of the obtained results to thin films used in microelectronics are discussed.

Casimir free energy of dielectric films: classical limit, low-temperature behavior and control

Science.gov (United States)

Klimchitskaya, G. L.; Mostepanenko, V. M.

2017-07-01

The Casimir free energy of dielectric films, both free-standing in vacuum and deposited on metallic or dielectric plates, is investigated. It is shown that the values of the free energy depend considerably on whether the calculation approach used neglects or takes into account the dc conductivity of film material. We demonstrate that there are material-dependent and universal classical limits in the former and latter cases, respectively. The analytic behavior of the Casimir free energy and entropy for a free-standing dielectric film at low temperature is found. According to our results, the Casimir entropy goes to zero when the temperature vanishes if the calculation approach with neglected dc conductivity of a film is employed. If the dc conductivity is taken into account, the Casimir entropy takes the positive value at zero temperature, depending on the parameters of a film, i.e. the Nernst heat theorem is violated. By considering the Casimir free energy of SiO2 and Al2O3 films deposited on a Au plate in the framework of two calculation approaches, we argue that physically correct values are obtained by disregarding the role of dc conductivity. A comparison with the well known results for the configuration of two parallel plates is made. Finally, we compute the Casimir free energy of SiO2, Al2O3 and Ge films deposited on high-resistivity Si plates of different thicknesses and demonstrate that it can be positive, negative and equal to zero. The effect of illumination of a Si plate with laser light is considered. Possible applications of the obtained results to thin films used in microelectronics are discussed.

Raman spectroscopy and dielectric Studies of multiple phase transitions in ZnO:Ni

Science.gov (United States)

Yadav, Harish Kumar; Sreenivas, K.; Gupta, Vinay; Scott, J. F.; Katiyar, R. S.

2008-03-01

We present Raman and dielectric data on Ni-doped ZnO (Zn1-xNixO) ceramics as a function of Ni concentration (x =0.03, 0.06, and 0.10) and temperature. A mode (around 130cm-1) is identified as TA(M) [J. M. Calleja and M. Cardona, Phys. Rev. B 16, 3753 (1977)] and appears due to an antiferromagnetic phase transition at low temperatures (100K) via the spin-orbit mechanism [P. Moch and C. Dugautier, Phys. Lett. A 43, 169 (1973)]. A strong dielectric anomaly occurs at around 430-460K, depending on Ni concentration, and is due to extrinsic electret effects (Ni ionic conduction) and not to a ferroelectric phase transition.

Dielectric Properties of Binary Solvent Mixtures of Dimethyl Sulfoxide with Water

Science.gov (United States)

Yang, Li-Jun; Yang, Xiao-Qing; Huang, Ka-Ma; Jia, Guo-Zhu; Shang, Hui

2009-01-01

In this paper, the dielectric properties of water-dimethylsulfoxide (DMSO) mixtures with different mole ratios have been investigated in the range of 1 GHz to 40 GHz at 298 K by using a molecular dynamics (MD) simulation. Only one dielectric loss peak was observed in the frequency range and the relaxation in these mixtures can be described by a single relaxation time of the Davidson-Cole. It was observed that within experimental error the dielectric relaxation can be described by the Debye-like model (β ≈ 1, S.M. Puranik, et al. J. Chem. Soc. Faraday Trans. 1992, 88, 433 – 435). In general, the results are very consistent with the experimental measurements. PMID:19399247

Dielectric Properties of Binary Solvent Mixtures of Dimethyl Sulfoxide with Water

Directory of Open Access Journals (Sweden)

Li-Jun Yang

2009-03-01

Full Text Available In this paper, the dielectric properties of water-dimethylsulfoxide (DMSO mixtures with different mole ratios have been investigated in the range of 1 GHz to 40 GHz at 298 K by using a molecular dynamics (MD simulation. Only one dielectric loss peak was observed in the frequency range and the relaxation in these mixtures can be described by a single relaxation time of the Davidson-Cole. It was observed that within experimental error the dielectric relaxation can be described by the Debye-like model (β ≈ 1, S.M. Puranik, et al. J. Chem. Soc. Faraday Trans.1992, 88, 433 - 435. In general, the results are very consistent with the experimental measurements.

Prospects for poor-man's cloaking with low-contrast all-dielectric optical elements

DEFF Research Database (Denmark)

Mortensen, Asger; Sigmund, Ole; Breinbjerg, Olav

2009-01-01

We discuss the prospects for low-contrast all-dielectric cloaking and offer a simple picture illustrating the basic obstacle for perfect cloaking without materials with an effective double-negative response. However, the same simple picture also gives directions for less perfect designs allowing ......-lens arrays perform in the opposite limit with L l...

Phase formation, structure and dielectric properties of ceramics (Na0.5Bi0.5TiO3–(K0.5Na0.5NbO3–BiFeO3

Directory of Open Access Journals (Sweden)

G. M. Kaleva

2016-03-01

Full Text Available Influence of BiFeO3 (BF on phase formation, unit cell parameters, microstructure, dielectric and ferroelectric properties of solid solutions close to the morphotropic phase boundary in the (Na0.5Bi0.5TiO3–(K0.5Na0.5NbO3 system additionally modified by the low-melting KCl additives has been studied. The formation of pure perovskite structure samples decrease in the unit cell parameters and increase in the TC value stimulated by the BF addition have been revealed. It was proved that modification of compositions by small amounts of the BF and KCl additives leads to improvement of dielectric parameters.

Effect of porosity and pore morphology on the low-frequency ...

Indian Academy of Sciences (India)

Effect of porosity and pore size distribution on the low-frequency dielectric response, in the range 0.01-100 kHz, in sintered ZrO2-8 mol% Y2O3 ceramic compacts have been investigated. Small-angle neutron scattering (SANS) technique has been employed to obtain the pore characteristics like pore size distribution, ...

ac conductivity and dielectric properties of amorphous Se80Te20-xGex chalcogenide glass film compositions

International Nuclear Information System (INIS)

Hegab, N.A.; Afifi, M.A.; Atyia, H.E.; Farid, A.S.

2009-01-01

Thin films of the prepared Se 80 Te 20-x Ge x (x = 5, 7 and 10 at.%) were prepared by thermal evaporation technique. X-ray diffraction patterns showed that the films were in amorphous state. The ac conductivity and dielectric properties of the investigated film compositions were studied in the frequency range 0.1-100 kHz and in temperature range (303-373 K). The experimental results indicated that the ac conductivity and the dielectric properties depended on the temperature and frequency. The ac conductivity is found to obey the ω s law, in accordance with the hopping model, s is found to be temperature dependent (s 1 and dielectric loss ε 2 were found to decrease with frequency and increase with temperature. The maximum barrier height W m , calculated from dielectric measurements according to Guintini equation, agrees with that proposed by the theory of hopping over potential barrier as suggested by Elliott in case of chalcogenide glasses. The density of localized states was estimated for the studied film compositions. The variation of the studied properties with Ge content was also investigated.

Computation of Dielectric Response in Molecular Solids for High Capacitance Organic Dielectrics.

Science.gov (United States)

Heitzer, Henry M; Marks, Tobin J; Ratner, Mark A

2016-09-20

The dielectric response of a material is central to numerous processes spanning the fields of chemistry, materials science, biology, and physics. Despite this broad importance across these disciplines, describing the dielectric environment of a molecular system at the level of first-principles theory and computation remains a great challenge and is of importance to understand the behavior of existing systems as well as to guide the design and synthetic realization of new ones. Furthermore, with recent advances in molecular electronics, nanotechnology, and molecular biology, it has become necessary to predict the dielectric properties of molecular systems that are often difficult or impossible to measure experimentally. In these scenarios, it is would be highly desirable to be able to determine dielectric response through efficient, accurate, and chemically informative calculations. A good example of where theoretical modeling of dielectric response would be valuable is in the development of high-capacitance organic gate dielectrics for unconventional electronics such as those that could be fabricated by high-throughput printing techniques. Gate dielectrics are fundamental components of all transistor-based logic circuitry, and the combination high dielectric constant and nanoscopic thickness (i.e., high capacitance) is essential to achieving high switching speeds and low power consumption. Molecule-based dielectrics offer the promise of cheap, flexible, and mass producible electronics when used in conjunction with unconventional organic or inorganic semiconducting materials to fabricate organic field effect transistors (OFETs). The molecular dielectrics developed to date typically have limited dielectric response, which results in low capacitances, translating into poor performance of the resulting OFETs. Furthermore, the development of better performing dielectric materials has been hindered by the current highly empirical and labor-intensive pace of synthetic

Electron dynamics and plasma jet formation in a helium atmospheric pressure dielectric barrier discharge jet

Energy Technology Data Exchange (ETDEWEB)

Algwari, Q. Th. [Centre for Plasma Physics, School of Maths and Physics, Queen' s University Belfast, University Road, Belfast, Northern Ireland BT7 1NN (United Kingdom); Electronic Department, College of Electronics Engineering, Mosul University, Mosul 41002 (Iraq); O' Connell, D. [Centre for Plasma Physics, School of Maths and Physics, Queen' s University Belfast, University Road, Belfast, Northern Ireland BT7 1NN (United Kingdom); York Plasma Institute, Department of Physics, University of York, York YO10 5DD (United Kingdom)

2011-09-19

The excitation dynamics within the main plasma production region and the plasma jets of a kHz atmospheric pressure dielectric barrier discharge (DBD) jet operated in helium was investigated. Within the dielectric tube, the plasma ignites as a streamer-type discharge. Plasma jets are emitted from both the powered and grounded electrode end; their dynamics are compared and contrasted. Ignition of these jets are quite different; the jet emitted from the powered electrode is ignited with a slight time delay to plasma ignition inside the dielectric tube, while breakdown of the jet at the grounded electrode end is from charging of the dielectric and is therefore dependent on plasma production and transport within the dielectric tube. Present streamer theories can explain these dynamics.

Surface roughening of silicon, thermal silicon dioxide, and low-k dielectric coral films in argon plasma

International Nuclear Information System (INIS)

Yin Yunpeng; Sawin, Herbert H.

2008-01-01

The surface roughness evolutions of single crystal silicon, thermal silicon dioxide (SiO 2 ), and low dielectric constant film coral in argon plasma have been measured by atomic force microscopy as a function of ion bombardment energy, ion impingement angle, and etching time in an inductively coupled plasma beam chamber, in which the plasma chemistry, ion energy, ion flux, and ion incident angle can be adjusted independently. The sputtering yield (or etching rate) scales linearly with the square root of ion energy at normal impingement angle; additionally, the angular dependence of the etching yield of all films in argon plasma followed the typical sputtering yield curve, with a maximum around 60 deg. -70 deg. off-normal angle. All films stayed smooth after etching at normal angle but typically became rougher at grazing angles. In particular, at grazing angles the rms roughness level of all films increased if more material was removed; additionally, the striation structure formed at grazing angles can be either parallel or transverse to the beam impingement direction, which depends on the off-normal angle. More interestingly, the sputtering caused roughness evolution at different off-normal angles can be qualitatively explained by the corresponding angular dependent etching yield curve. In addition, the roughening at grazing angles is a strong function of the type of surface; specifically, coral suffers greater roughening compared to thermal silicon dioxide

Dielectric relaxation and ac conduction in γ-irradiated UHMWPE/MWCNTs nano composites: Impedance spectroscopy analysis

International Nuclear Information System (INIS)

Maqbool, Syed Asad; Mehmood, Malik Sajjad; Mukhtar, Saqlain Saqib; Baluch, Mansoor A.; Khan, Shamim; Yasin, Tariq; Khan, Yaqoob

2017-01-01

The dielectric behavior of γ-irradiated ultra-high molecular weight polyethylene (UHMWPE) and its nano composites (NCs) with γ-ray modified multi wall carbon nano tubes (γ-MWCNTs) and MWCNTs had been studied using impedance spectroscopy. The study had been carried out in the frequency range of 20–2 MHz at room temperature. All samples (pure and NCs) were prepared in the form of sheets and irradiated with γ-dose of 50 kGy and 100 kGy, respectively. The comprehensive analysis of results revealed that resistivity of UHMWPE for conduction decreased on irradiation and incorporation of MWCNTs (whether γ ray modified or un-modified) due to the radiation induced damage and conductive networks induced by MWCNTs. At low frequency range a significant increase in the dielectric constant had been observed because of irradiation and addition of MWNCTs. The trend of loss tangent and ac conductivity for each investigated sample depended on resistivity offered and had a decreasing trend as a function of frequency. Moreover, dissipation factor increased with the incorporation of MWNCTs and irradiation from 0.12 to 0.22. In addition to this, non-frequency dependent static dielectric constant was also found to increase with irradiation and incorporation of MWCNTs. The relaxation time was found to increase from 1.2 to 4.3 ms due to hindrance offered by radiation induced mutual cross linking of PE chains and polymer-MWNCTs bindings. - Highlights: • The resistivity for conduction in pristine UHMWPE is decreased with γ-irradiation. • Conduction in PE/MWCNTs nanocomposites increased due to MWCNTs addition. • Static dielectric constant of UHMWPE increased with γ-irradiation. • Static dielectric constant of UHMWPE increased due to MWCNTs incorporation.

Effects of Annealing Time on the Performance of OTFT on Glass with ZrO2 as Gate Dielectric

Directory of Open Access Journals (Sweden)

W. M. Tang

2012-01-01

Full Text Available Copper phthalocyanine-based organic thin-film transistors (OTFTs with zirconium oxide (ZrO2 as gate dielectric have been fabricated on glass substrates. The gate dielectric is annealed in N2 at different durations (5, 15, 40, and 60 min to investigate the effects of annealing time on the electrical properties of the OTFTs. Experimental results show that the longer the annealing time for the OTFT, the better the performance. Among the devices studied, OTFTs with gate dielectric annealed at 350°C in N2 for 60 min exhibit the best device performance. They have a small threshold voltage of −0.58 V, a low subthreshold slope of 0.8 V/decade, and a low off-state current of 0.73 nA. These characteristics demonstrate that the fabricated device is suitable for low-voltage and low-power operations. When compared with the TFT samples annealed for 5 min, the ones annealed for 60 min have 20% higher mobility and nearly two times smaller the subthreshold slope and off-state current. The extended annealing can effectively reduce the defects in the high-k film and produces a better insulator/organic interface. This results in lower amount of carrier scattering and larger CuPc grains for carrier transport.

Electrostatically assisted fabrication of silver-dielectric core/shell nanoparticles thin film capacitor with uniform metal nanoparticle distribution and controlled spacing.

Science.gov (United States)

Li, Xue; Niitsoo, Olivia; Couzis, Alexander

2016-03-01

An electrostatically-assisted strategy for fabrication of thin film composite capacitors with controllable dielectric constant (k) has been developed. The capacitor is composed of metal-dielectric core/shell nanoparticle (silver/silica, Ag@SiO2) multilayer films, and a backfilling polymer. Compared with the simple metal particle-polymer mixtures where the metal nanoparticles (NP) are randomly dispersed in the polymer matrix, the metal volume fraction in our capacitor was significantly increased, owing to the densely packed NP multilayers formed by the electrostatically assisted assembly process. Moreover, the insulating layer of silica shell provides a potential barrier that reduces the tunneling current between neighboring Ag cores, endowing the core/shell nanocomposites with a stable and relatively high dielectric constant (k) and low dielectric loss (D). Our work also shows that the thickness of the SiO2 shell plays a dominant role in controlling the dielectric properties of the nanocomposites. Control over metal NP separation distance was realized not only by variation the shell thickness of the core/shell NPs but also by introducing a high k nanoparticle, barium strontium titanate (BST) of relatively smaller size (∼8nm) compared to 80-160nm of the core/shell Ag@SiO2 NPs. The BST assemble between the Ag@SiO2 and fill the void space between the closely packed core/shell NPs leading to significant enhancement of the dielectric constant. This electrostatically assisted assembly method is promising for generating multilayer films of a large variety of NPs over large areas at low cost. Copyright © 2015 Elsevier Inc. All rights reserved.

Low percolation transitions in carbon nanotube networks dispersed in a polymer matrix: dielectric properties, simulations and experiments.

Science.gov (United States)

Simoes, Ricardo; Silva, Jaime; Vaia, Richard; Sencadas, Vítor; Costa, Pedro; Gomes, João; Lanceros-Méndez, Senentxu

2009-01-21

The low concentration behaviour and the increase of the dielectric constant in carbon nanotubes/polymer nanocomposites near the percolation threshold are still not well understood. In this work, a numerical model has been developed which focuses on the effect of the inclusion of conductive fillers in a dielectric polymer matrix on the dielectric constant and the dielectric strength. Experiments have been carried out in carbon nanotubes/poly(vinylidene fluoride) nanocomposites in order to compare to the simulation results. This work shows how the critical concentration is related to the formation of capacitor networks and that these networks give rise to high variations in the electrical properties of the composites. Based on numerical studies, the dependence of the percolation transition on the preparation of the nanocomposite is discussed. Finally, based on numerical and experimental results, both ours and from other authors, the causes of anomalous percolation behaviour of the dielectric constant are identified.

Design of Higher-k and More Stable Rare Earth Oxides as Gate Dielectrics for Advanced CMOS Devices

Directory of Open Access Journals (Sweden)

Yi Zhao

2012-08-01

Full Text Available High permittivity (k gate dielectric films are widely studied to substitute SiO₂ as gate oxides to suppress the unacceptable gate leakage current when the traditional SiO₂ gate oxide becomes ultrathin. For high-k gate oxides, several material properties are dominantly important. The first one, undoubtedly, is permittivity. It has been well studied by many groups in terms of how to obtain a higher permittivity for popular high-k oxides, like HfO₂ and La₂O₃. The second one is crystallization behavior. Although it’s still under the debate whether an amorphous film is definitely better than ploy-crystallized oxide film as a gate oxide upon considering the crystal boundaries induced leakage current, the crystallization behavior should be well understood for a high-k gate oxide because it could also, to some degree, determine the permittivity of the high-k oxide. Finally, some high-k gate oxides, especially rare earth oxides (like La₂O₃, are not stable in air and very hygroscopic, forming hydroxide. This topic has been well investigated in over the years and significant progresses have been achieved. In this paper, I will intensively review the most recent progresses of the experimental and theoretical studies for preparing higher-k and more stable, in terms of hygroscopic tolerance and crystallization behavior, Hf- and La-based ternary high-k gate oxides.

Conductivity and dielectric behaviour of indium substituted zinc ferrites prepared by coprecipitation method

International Nuclear Information System (INIS)

Cvejić, Željka; Rakić, Srđan; Jankov, Stevan; Skuban, Sonja; Rapajić, Sanja; Srdić, Vladimir V

2015-01-01

This paper presents the results concerning dielectric behavior and conductivity of the nanosized Zn 1−x In x Fe 2 O 4 powders (x = 0, 0.15, 0.2, and 0.3), obtained by coprecipitation method. The frequency dependence of dielectric permittivity and conductivity of the samples is determined in the frequency range of 1–10 5 Hz, at temperatures from 300–350 K, while the temperature dependence of conductivity was recorded at 100 Hz, 10 kHz and 100 kHz. The ac conductivity was found to follow universal dielectric response, which is typical for charge transport by hopping or tunneling processes. Analyzing the variation of the parameter n (as a measure of the degree of correlation between conductivity and frequency), with the temperatures we discuss the possible conduction mechanism in investigated samples. Qualitatively, non-overlapping small polarons (NSPT) are usually associated with increase in n with increasing temperature, while correlated barrier hopping (CBH) shows a decrease in n with increasing T. (paper)

Ultralow frequency bridge for dielectric measurements: applications to electrects

International Nuclear Information System (INIS)

Slaets, J.

1976-01-01

The problem of U.L.F. (Ultra Low Frequency) dielectric relaxation is investigated. An experimental model is proposed for a bridge covering the range of 10 -3 Hz-10Hz, pased on phase shift measurements originally proposed by Van Turhout and collaborators. The main experimental problems are also analyzed with such U.L.F. measurements and describe its construction and performance. The theoretical correlation between U.L.F. dielectric relaxation and electret thermal stimulated currents is also investigated. A correction for the integral expression given by Turnhout and collaborators, is calculated in particular that takes into account the value of the activation energy in the relation between the two techniques.The correction is important for values of the activation energy below 0,5eV, which occur frequently in dielectric relaxation processes. (Author) [pt

Influence of Low Speed Rolling Movement on High Electrical Breakdown for Water Dielectric with Microsecond Charging

International Nuclear Information System (INIS)

Zhang Zicheng; Zhang Jiande; Yang Jianhua

2006-01-01

By means of a coaxial apparatus, high electrical breakdown experiments are carried out in the rest state and the low speed rolling state with microsecond charging and the experimental results are analyzed. The conclusions are: (1) the breakdown stress of water dielectric in the rolling state is in good agreement with that in Martin formula, and so is that in the rest state; (2) the breakdown stress of water dielectric in the rolling state is about 5% higher than that in the rest state; (3) the results simulated with ANSYS demonstrate that the breakdown stress of water dielectric decreases when the bubbles appear near the surface of electrodes; (4) the primary mechanism to increase the breakdown stress of water dielectric in the rolling state is that the bubbles are driven away and the number of bubbles near the surface of electrodes is decreased by rolling movement

Dielectric properties of nanosilica/low-density polyethylene composites: The surface chemistry of nanoparticles and deep traps induced by nanoparticles

Directory of Open Access Journals (Sweden)

S. Ju

2014-09-01

Full Text Available Four kinds of nanosilica particles with different surface modification were employed to fabricate low-density polyethylene (LDPE composites using melt mixing and hot molding methods. The surface chemistry of modified nanosilica was analyzed by X-ray photoelectron spectroscopy. All silica nanoparticles were found to suppress the space charge injection and accumulation, increase the volume resistivity, decrease the permittivity and dielectric loss factor at low frequencies, and decrease the dielectric breakdown strength of the LDPE polymers. The modified nanoparticles, in general, showed better dielectric properties than the unmodified ones. It was found that the carrier mobility, calculated from J–V curves using the Mott-Gurney equation, was much lower for the nanocomposites than for the neat LDPE.

Dielectric relaxation of selenium-tellurium mixed former glasses

Science.gov (United States)

Palui, A.; Ghosh, A.

2017-05-01

We report the study of dielectric properties of mixed network former glasses of composition 0.3Ag2O-0.7(xSeO2-(1-x)TeO2); x=0, 0.1, 0.3, 0.4, 0.5 and 0.6 in a wide frequency 10 Hz - 2 MHz and temperature range 223 K - 403 K. The experimental data have been analyzed in the framework of complex dielectric permittivity. The dielectric permittivity data have been analyzed using the Cole-Cole function. The inverse temperature dependence of relaxation time obtained from real part of dielectric permittivity data follows the Arrhenius relation. The activation energy shows mixed glass former effect with variation of mixed former ratio. A non-zero value of shape parameters is observed and it is almost independent of temperature and composition.

SrFe12O19 based ceramics with ultra-low dielectric loss in the millimetre-wave band

Science.gov (United States)

Yu, Chuying; Zeng, Yang; Yang, Bin; Wylde, Richard; Donnan, Robert; Wu, Jiyue; Xu, Jie; Gao, Feng; Abrahams, Isaac; Reece, Mike; Yan, Haixue

2018-04-01

Non-reciprocal devices such as isolators and circulators, based mainly on ferromagnetic materials, require extremely low dielectric loss in order for strict power-link budgets to be met for millimetre (mm)-wave and terahertz (THz) systems. The dielectric loss of commercial SrFe12O19 hexaferrite was significantly reduced to below 0.002 in the 75-170 GHz band by thermal annealing. While the overall concentration of Fe2+ and oxygen vacancy defects is relatively low in the solid, their concentration at the surface is significantly higher, allowing for a surface sensitive technique such as XPS to monitor the Fe3+/Fe2+ redox reaction. Oxidation of Fe2+ and a decrease in oxygen vacancies are found at the surface on annealing, which are reflected in the bulk sample by a small change in the unit cell volume. The significant decrease in the dielectric loss property can be attributed to the decreased concentration of charged defects such as Fe2+ and oxygen vacancies through the annealing process, which demonstrated that thermal annealing could be effective in improving the dielectric performance of ferromagnetic materials for various applications.

Ternary rare-earth based alternative gate-dielectrics for future integration in MOSFETs

Energy Technology Data Exchange (ETDEWEB)

Schubert, Juergen; Lopes, Joao Marcelo; Durgun Oezben, Eylem; Luptak, Roman; Lenk, Steffi; Zander, Willi; Roeckerath, Martin [IBN 1-IT, Forschungszentrum Juelich, 52425 Juelich (Germany)

2009-07-01

The dielectric SiO{sub 2} has been the key to the tremendous improvements in Si-based metal-oxide-semiconductor (MOS) device performance over the past four decades. It has, however, reached its limit in terms of scaling since it exhibits a leakage current density higher than 1 A/cm{sup 2} and does not retain its intrinsic physical properties at thicknesses below 1.5 nm. In order to overcome these problems and keep Moore's law ongoing, the use of higher dielectric constant (k) gate oxides has been suggested. These high-k materials must satisfy numerous requirements such as the high k, low leakage currents, suitable band gap und offsets to silicon. Rare-earth based dielectrics are promising materials which fulfill these needs. We will review the properties of REScO{sub 3} (RE = La, Dy, Gd, Sm, Tb) and LaLuO{sub 3} thin films, grown with pulsed laser deposition, e-gun evaporation or molecular beam deposition, integrated in capacitors and transistors. A k > 20 for the REScO{sub 3} (RE = Dy, Gd) and around 30 for (RE = La, Sm, Tb) and LaLuO{sub 3} are obtained. Transistors prepared on SOI and sSOI show mobility values up to 380 cm{sup 2}/Vs on sSOI, which are comparable to such prepared with HfO{sub 2}.

Numerical differentiation methods for the logarithmic derivative technique used in dielectric spectroscopy

Directory of Open Access Journals (Sweden)

Henrik Haspel

2010-06-01

Full Text Available In dielectric relaxation spectroscopy the conduction contribution often hampers the evaluation of dielectric spectra, especially in the low-frequency regime. In order to overcome this the logarithmic derivative technique could be used, where the calculation of the logarithmic derivative of the real part of the complex permittivity function is needed. Since broadband dielectric measurement provides discrete permittivity function, numerical differentiation has to be used. Applicability of the Savitzky-Golay convolution method in the derivative analysis is examined, and a detailed investigation of the influential parameters (frequency, spectrum resolution, peak shape is presented on synthetic dielectric data.

Broadening of Distribution of Trap States in PbS Quantum Dot Field-Effect Transistors with High-k Dielectrics.

Science.gov (United States)

Nugraha, Mohamad I; Häusermann, Roger; Watanabe, Shun; Matsui, Hiroyuki; Sytnyk, Mykhailo; Heiss, Wolfgang; Takeya, Jun; Loi, Maria A

2017-02-08

We perform a quantitative analysis of the trap density of states (trap DOS) in PbS quantum dot field-effect transistors (QD-FETs), which utilize several polymer gate insulators with a wide range of dielectric constants. With increasing gate dielectric constant, we observe increasing trap DOS close to the lowest unoccupied molecular orbital (LUMO) of the QDs. In addition, this increase is also consistently followed by broadening of the trap DOS. We rationalize that the increase and broadening of the spectral trap distribution originate from dipolar disorder as well as polaronic interactions, which are appearing at strong dielectric polarization. Interestingly, the increased polaron-induced traps do not show any negative effect on the charge carrier mobility in our QD devices at the highest applied gate voltage, giving the possibility to fabricate efficient low-voltage QD devices without suppressing carrier transport.

DIELECTRIC AND PYROELECTRIC PROPERTIES OF THE COMPOSITES OF FERROELECTRIC CERAMIC AND POLY(VINYL CHLORIDE

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M.Olszowy

2003-01-01

Full Text Available The dielectric and pyroelectric properties of lead zirconate titanate/poly(vinyl chloride [PZT/PVC] and barium titanate/poly(vinyl chloride [BaTiO3/ PVC] composites were studied. Flexible composites were fabricated in the thin films form (200-400 μm by hot-pressed method. Powders of PZT or BaTiO3 in the shape of ≤ 75 μm ceramics particles were dispersed in a PVC matrix, providing composites with 0-3} connectivity. Distribution of the ceramic particles in the polymer phase was examined by scanning electron microscopy. The analysis of the thermally stimulated currents (TSC have also been done. The changes of dielectric and pyroelectric data on composites with different contents of ceramics up to 40% volume were investigated. The dielectric constants were measured in the frequency range from 600 Hz to 6 MHz at room temperature. The pyroelectric coefficient for BaTiO3/PVC composite at 343 K is about 35 μC/m2K which is higher than that of β-PVDF (10 μC/m2 K.

A combined diffraction and dielectric properties investigation of Ba3MnNb2O9 complex perovskites

International Nuclear Information System (INIS)

Liu Yun; Withers, Ray L.; Whichello, A.P.; Noren, Lasse; Ting, Valeska; Brink, Frank; Fitz Gerald, John D.

2005-01-01

A combined synthesis, diffraction and dielectric properties investigation of the dependence (and effect) of Mn 2+ /Nb 5+ ordering in Ba 3 MnNb 2 O 9 (BMN) upon annealing atmosphere and processing conditions has been carried out. Annealing in different atmospheres was not found to significantly alter either nominal stoichiometry or structure type. The obtained structure type (disordered metrically cubic or ordered trigonal) as well as the measured electrical properties (in particular, the dielectric loss) were, however, found to be sensitive to the synthesis route. Samples obtained via solid-state reaction were found to be predominantly of 1:2 Mn 2+ /Nb 5+ ordered, P3-bar m1 trigonal structure type whereas samples obtained via an aqueous solution route were found to be of a Mn 2+ /Nb 5+ 'disordered', metrically cubic structure type. All solid-state synthesized samples showed reasonable dielectric properties. The microwave dielectric constant and dielectric quality factor, Q, at 8GHz of an as-synthesized BMN sample were 38 and 100, respectively. By contrast, the dielectric loss of the metrically cubic, Mn 2+ /Nb 5+ 'disordered' samples obtained via an aqueous solution synthesis process were significantly worse

Investigation of dielectric constant variations for Malaysians soil species towards its natural background dose

Science.gov (United States)

Jafery, Khawarizmi Mohd; Embong, Zaidi; Khee, Yee See; Haimi Dahlan, Samsul; Tajudin, Saiful Azhar Ahmad; Ahmad, Salawati; Kudnie Sahari, Siti; Maxwell, Omeje

2018-01-01

The correlation of natural background gamma radiation and real part of the complex relative permittivity (dielectric constant) for various species Malaysian soils was investigated in this research. The sampling sites were chosen randomly according to soils groups that consist of sedentary, alluvial and miscellaneous soil which covered the area of Batu Pahat, Kluang and Johor Bahru, Johor state of Malaysia. There are 11 types of Malaysian soil species that have been studied; namely Peat, Linau-Sedu, Selangor-Kangkong, Kranji, Telemong-Akob-Local Alluvium, Holyrood-Lunas, Batu Anam-Melaka-Tavy, Harimau Tampoi, Kulai-Yong Peng, Rengam-Jerangau, and Steepland soils. In-situ exposure rates of each soil species were measured by using portable gamma survey meter and ex-situ analysis of real part of relative permittivity was performed by using DAK (Dielectric Assessment Kit assist by network analyser). Results revealed that the highest and the lowest background dose rate were 94 ± 26.28 μR hr-1 and 7 ± 0.67 μR hr-1 contributed by Rengam Jerangau and Peat soil species respectively. Meanwhile, dielectric constant measurement, it was performed in the range of frequency between 100 MHz to 3 GHz. The measurements of each soils species dielectric constant are in the range of 1 to 3. At the lower frequencies in the range of 100 MHz to 600 MHz, it was observed that the dielectric constant for each soil species fluctuated and inconsistent. But it remained consistent in plateau form of signal at higher frequency at range above 600 MHz. From the comparison of dielectric properties of each soil at above 600 MHz of frequency, it was found that Rengam-Jerangau soil species give the highest reading and followed by Selangor-Kangkong species. The average dielectric measurement for both Selangor-Kangkong and Rengam-Jerangau soil species are 2.34 and 2.35 respectively. Meanwhile, peat soil species exhibits the lowest dielectric measurement of 1.83. It can be clearly seen that the pattern

Dielectric Properties of Azo Polymers: Effect of the Push-Pull Azo Chromophores

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Xuan Zhang

2018-01-01

Full Text Available The relationship between the structure and the dielectric properties of the azo polymers was studied. Four azo polymers were synthesized through the azo-coupling reaction between the same precursor (PAZ and diazonium salts of 4-aminobenzoic acid ethyl ester, 4-aminobenzonitrile, 4-nitroaniline, and 2-amino-5-nitrothiazole, respectively. The precursor and azo polymers were characterized by 1H NMR, FT-IR, UV-vis, GPC, and DSC. The dielectric constant and dielectric loss of the samples were measured in the frequency range of 100 Hz–200 kHz. Due to the existence of the azo chromophores, the dielectric constant of the azo polymers increases compared with that of the precursor. In addition, the dielectric constant of the azo polymers increases with the increase of the polarity of the azo chromophores. A random copolymer (PAZ-NT-PAZ composed of the azo polymer PAZ-NT and the precursor PAZ was also prepared to investigate the content of the azo chromophores on the dielectric properties of the azo polymers. It showed that the dielectric constant increases with the increase of the azo chromophores. The results show that the dielectric constant of this kind of azo polymers can be controlled by changing the structures and contents of azo chromophores during the preparation process.

The relationship between chemical structure and dielectric properties of plasma-enhanced chemical vapor deposited polymer thin films

Energy Technology Data Exchange (ETDEWEB)

Jiang Hao [Materials Sci and Tech Applications, LLC, 409 Maple Springs Drive, Dayton OH 45458 (United States)]. E-mail: hao.jiang@wpafb.af.mil; Hong Lianggou [Materials Sci and Tech Applications, LLC, 409 Maple Springs Drive, Dayton OH 45458 (United States); Venkatasubramanian, N. [Research Institute, University of Dayton, 300 College Park, Dayton, OH 45469-0168 (United States); Grant, John T. [Research Institute, University of Dayton, 300 College Park, Dayton, OH 45469-0168 (United States); Eyink, Kurt [Air Force Research Laboratory, Materials Directorate, 3005 Hobson Way, Wright-Patterson Air Force Base, OH 45433-7707 (United States); Wiacek, Kevin [Air Force Research Laboratory, Propulsion Directorate, 1950 Fifth Street, Wright-Patterson Air Force Base, OH 45433-7251 (United States); Fries-Carr, Sandra [Air Force Research Laboratory, Propulsion Directorate, 1950 Fifth Street, Wright-Patterson Air Force Base, OH 45433-7251 (United States); Enlow, Jesse [Air Force Research Laboratory, Materials Directorate, 3005 Hobson Way, Wright-Patterson Air Force Base, OH 45433-7707 (United States); Bunning, Timothy J. [Air Force Research Laboratory, Materials Directorate, 3005 Hobson Way, Wright-Patterson Air Force Base, OH 45433-7707 (United States)

2007-02-26

Polymer dielectric films fabricated by plasma enhanced chemical vapor deposition (PECVD) have unique properties due to their dense crosslinked bulk structure. These spatially uniform films exhibit good adhesion to a variety of substrates, excellent chemical inertness, high thermal resistance, and are formed from an inexpensive, solvent-free, room temperature process. In this work, we studied the dielectric properties of plasma polymerized (PP) carbon-based polymer thin films prepared from two precursors, benzene and octafluorocyclobutane. Two different monomer feed locations, directly in the plasma zone or in the downstream region (DS) and two different pressures, 80 Pa (high pressure) or 6.7 Pa (low pressure), were used. The chemical structure of the PECVD films was examined by X-ray photoelectron spectroscopy and Fourier-transform infrared spectroscopy. The dielectric constant ({epsilon} {sub r}) and dielectric loss (tan {delta}) of the films were investigated over a range of frequencies up to 1 MHz and the dielectric strength (breakdown voltage) (F {sub b}) was characterized by the current-voltage method. Spectroscopic ellipsometry was performed to determine the film thickness and refractive index. Good dielectric properties were exhibited, as PP-benzene films formed in the high pressure, DS region showed a F{sub b} of 610 V/{mu}m, an {epsilon} {sub r} of 3.07, and a tan {delta} of 7.0 x 10{sup -3} at 1 kHz. The PECVD processing pressure has a significant effect on final film structure and the film's physical density has a strong impact on dielectric breakdown strength. Also noted was that the residual oxygen content in the PP-benzene films significantly affected the frequency dependences of the dielectric constant and loss.

The relationship between chemical structure and dielectric properties of plasma-enhanced chemical vapor deposited polymer thin films

International Nuclear Information System (INIS)

Jiang Hao; Hong Lianggou; Venkatasubramanian, N.; Grant, John T.; Eyink, Kurt; Wiacek, Kevin; Fries-Carr, Sandra; Enlow, Jesse; Bunning, Timothy J.

2007-01-01

Polymer dielectric films fabricated by plasma enhanced chemical vapor deposition (PECVD) have unique properties due to their dense crosslinked bulk structure. These spatially uniform films exhibit good adhesion to a variety of substrates, excellent chemical inertness, high thermal resistance, and are formed from an inexpensive, solvent-free, room temperature process. In this work, we studied the dielectric properties of plasma polymerized (PP) carbon-based polymer thin films prepared from two precursors, benzene and octafluorocyclobutane. Two different monomer feed locations, directly in the plasma zone or in the downstream region (DS) and two different pressures, 80 Pa (high pressure) or 6.7 Pa (low pressure), were used. The chemical structure of the PECVD films was examined by X-ray photoelectron spectroscopy and Fourier-transform infrared spectroscopy. The dielectric constant (ε r ) and dielectric loss (tan δ) of the films were investigated over a range of frequencies up to 1 MHz and the dielectric strength (breakdown voltage) (F b ) was characterized by the current-voltage method. Spectroscopic ellipsometry was performed to determine the film thickness and refractive index. Good dielectric properties were exhibited, as PP-benzene films formed in the high pressure, DS region showed a F b of 610 V/μm, an ε r of 3.07, and a tan δ of 7.0 x 10 -3 at 1 kHz. The PECVD processing pressure has a significant effect on final film structure and the film's physical density has a strong impact on dielectric breakdown strength. Also noted was that the residual oxygen content in the PP-benzene films significantly affected the frequency dependences of the dielectric constant and loss

Low temperature fabrication of barium titanate hybrid films and their dielectric properties

International Nuclear Information System (INIS)

Kobayashi, Yoshio; Saito, Hirobumi; Kinoshita, Takafumi; Nagao, Daisuke; Konno, Mikio

2011-01-01

A method for incorporating BT nano-crystalline into barium titanate (BT) films is proposed for a low temperature fabrication of high dielectric constant films. BT nanoparticles were synthesized by hydrolysis of a BT complex alkoxide in 2-methoxyethanol (ME)/ethanol cosolvent. As the ME volume fraction in the cosolvent (ME fraction) increased from 0 to 100%, the particle and crystal sizes tended to increase from 13.4 to 30.2 nm and from 15.8 to 31.4 nm, respectively, and the particle dispersion in the solution became more improved. The BT particles were mixed with BT complex alkoxide dissolved in an ME/ethanol cosolvent for preparing a precursor solution that was then spin-coated on a Pt substrate and dried at 150 o C. The dielectric constant of the spin-coated BT hybrid film increased with an increase in the volume fraction of the BT particles in the film. The dissipation factor of the hybrid film tended to decrease with an increase in the ME fraction in the precursor solution. The hybrid film fabricated at a BT fraction of 30% and an ME fraction of 25% attained a dielectric constant as high as 94.5 with a surface roughness of 14.0 nm and a dissipation factor of 0.11.

Influence of stacking morphology and edge nitrogen doping on the dielectric performance of graphene-polymer nanocomposites

KAUST Repository

Almadhoun, Mahmoud N.

2014-05-13

We demonstrate that functional groups obtained by varying the preparation route of reduced graphene oxide (rGO) highly influence filler morphology and the overall dielectric performance of rGO-relaxor ferroelectric polymer nanocomposite. Specifically, we show that nitrogen-doping by hydrazine along the edges of reduced graphene oxide embedded in poly(vinylidene fluoride-trifluoroethylene-chlorofluoroethylene) results in a dielectric permittivity above 10 000 while maintaining a dielectric loss below 2. This is one of the best-reported dielectric constant/dielectric loss performance values. In contrast, rGO produced by the hydrothermal reduction route shows a much lower enhancement, reaching a maximum dielectric permittivity of 900. Furthermore, functional derivatives present in rGO are found to strongly affect the quality of dispersion and the resultant percolation threshold at low loading levels. However, high leakage currents and lowered breakdown voltages offset the advantages of increased capacitance in these ultrahigh-k systems, resulting in no significant improvement in stored energy density. © 2014 American Chemical Society.

High-performance III-V MOSFET with nano-stacked high-k gate dielectric and 3D fin-shaped structure.

Science.gov (United States)

Chen, Szu-Hung; Liao, Wen-Shiang; Yang, Hsin-Chia; Wang, Shea-Jue; Liaw, Yue-Gie; Wang, Hao; Gu, Haoshuang; Wang, Mu-Chun

2012-08-01

A three-dimensional (3D) fin-shaped field-effect transistor structure based on III-V metal-oxide-semiconductor field-effect transistor (MOSFET) fabrication has been demonstrated using a submicron GaAs fin as the high-mobility channel. The fin-shaped channel has a thickness-to-width ratio (TFin/WFin) equal to 1. The nano-stacked high-k Al2O3 dielectric was adopted as a gate insulator in forming a metal-oxide-semiconductor structure to suppress gate leakage. The 3D III-V MOSFET exhibits outstanding gate controllability and shows a high Ion/Ioff ratio > 105 and a low subthreshold swing of 80 mV/decade. Compared to a conventional Schottky gate metal-semiconductor field-effect transistor or planar III-V MOSFETs, the III-V MOSFET in this work exhibits a significant performance improvement and is promising for future development of high-performance n-channel devices based on III-V materials.

Dielectric properties and microstructural characterization of cubic pyrochlored bismuth magnesium niobates

KAUST Repository

Zhang, Yuan

2013-08-06

Cubic bismuth pyrochlores in the Bi2O3 Bi 2O3-MgO-Nb2O5 Nb2O 5 system have been investigated as promising dielectric materials due to their high dielectric constant and low dielectric loss. Here, we report on the dielectric properties and microstructures of cubic pyrochlored Bi 1.5 MgNb 1.5 O 7 Bi1.5MgNb1.5O7 (BMN) ceramic samples synthesized via solid-state reactions. The dielectric constant (measured at 1 MHz) was measured to be ∼ 120 ∼120 at room temperature, and the dielectric loss was as low as 0.001. X-ray diffraction patterns demonstrated that the BMN samples had a cubic pyrochlored structure, which was also confirmed by selected area electron diffraction (SAED) patterns. Raman spectrum revealed more than six vibrational models predicted for the ideal pyrochlore structure, indicating additional atomic displacements of the A and O′ O\\' sites from the ideal atomic positions in the BMN samples. Structural modulations of the pyrochlore structure along the [110] and [121] directions were observed in SAED patterns and high-resolution transmission electron microscopy (HR-TEM) images. In addition, HR-TEM images also revealed that the grain boundaries (GBs) in the BMN samples were much clean, and no segregation or impure phase was observed forming at GBs. The high dielectric constants in the BMN samples were ascribed to the long-range ordered pyrochlore structures since the electric dipoles formed at the superstructural direction could be enhanced. The low dielectric loss was attributed to the existence of noncontaminated GBs in the BMN ceramics. © 2013 Springer-Verlag Berlin Heidelberg.

AC conductivity and dielectric behavior of bulk Furfurylidenemalononitrile

Science.gov (United States)

El-Nahass, M. M.; Ali, H. A. M.

2012-06-01

AC conductivity and dielectric behavior for bulk Furfurylidenemalononitrile have been studied over a temperature range (293-333 K) and frequency range (50-5×106 Hz). The frequency dependence of ac conductivity, σac, has been investigated by the universal power law, σac(ω)=Aωs. The variation of the frequency exponent (s) with temperature was analyzed in terms of different conduction mechanisms, and it was found that the correlated barrier hopping (CBH) model is the predominant conduction mechanism. The temperature dependence of σac(ω) showed a linear increase with the increase in temperature at different frequencies. The ac activation energy was determined at different frequencies. Dielectric data were analyzed using complex permittivity and complex electric modulus for bulk Furfurylidenemalononitrile at various temperatures.

Structural, morphological and dielectric studies of zirconium substituted CoFe2O4 nanoparticles

Directory of Open Access Journals (Sweden)

S. Anand

2017-12-01

Full Text Available In this work, the influence of zirconium substitution in cubic spinel nanocrystalline CoFe2O4 on the structural, morphological and dielectric properties are reported. Zirconium substituted cobalt ferrite Co1-xZrxFe2O4 (x = 0.7 nanoparticles were synthesized by sol-gel route. The structural and morphological investigations using powder X-ray diffraction and high resolution scanning electron microscope (HRSEM analysis are reported. Scherrer plot, Williamson–Hall analysis and Size-strain plot method were used to calculate the crystallite size and lattice strain of the samples. High purity chemical composition of the sample was confirmed by energy dispersive X-ray analysis. The atoms vibration modes of as synthesized nanoparticles were recorded using Fourier transform infrared (FTIR spectrometer in the range of 4000–400 cm-1. The temperature-dependent dielectric properties of zirconium substituted cobalt ferrite nanoparticles were also carried out. Relative dielectric permittivity, loss tangent and AC conductivity were measured in the frequency range 50 Hz to 5 MHz at temperatures between 323 K and 473 K. The dielectric constant and dielectric loss values of the sample decreased with increasing in the frequency of the applied signal.

Study of dielectric relaxation and AC conductivity of InP:S single crystal

Science.gov (United States)

El-Nahass, M. M.; Ali, H. A. M.; El-Shazly, E. A.

2012-07-01

The dielectric relaxation and AC conductivity of InP:S single crystal were studied in the frequency range from 100 to 5.25 × 105 Hz and in the temperature range from 296 to 455 K. The dependence of the dielectric constant (ɛ1) and the dielectric loss (ɛ2) on both frequency and temperature was investigated. Since no peak was observed on the dielectric loss, we used a method based on the electric modulus to evaluate the activation energy of the dielectric relaxation. Scaling of the electric modulus spectra showed that the charge transport dynamics is independent of temperature. The AC conductivity (σAC) was found to obey the power law: Aωs. Analysis of the AC conductivity data and the frequency exponent showed that the correlated barrier hopping (CBH) model is the dominant mechanism for the AC conduction. The variation of AC conductivity with temperature at different frequencies showed that σAC is a thermally activated process.

Hybrid nanomembrane-based capacitors for the determination of the dielectric constant of semiconducting molecular ensembles

Science.gov (United States)

Petrini, Paula A.; Silva, Ricardo M. L.; de Oliveira, Rafael F.; Merces, Leandro; Bof Bufon, Carlos C.

2018-06-01

Considerable advances in the field of molecular electronics have been achieved over the recent years. One persistent challenge, however, is the exploitation of the electronic properties of molecules fully integrated into devices. Typically, the molecular electronic properties are investigated using sophisticated techniques incompatible with a practical device technology, such as the scanning tunneling microscopy. The incorporation of molecular materials in devices is not a trivial task as the typical dimensions of electrical contacts are much larger than the molecular ones. To tackle this issue, we report on hybrid capacitors using mechanically-compliant nanomembranes to encapsulate ultrathin molecular ensembles for the investigation of molecular dielectric properties. As the prototype material, copper (II) phthalocyanine (CuPc) has been chosen as information on its dielectric constant (k CuPc) at the molecular scale is missing. Here, hybrid nanomembrane-based capacitors containing metallic nanomembranes, insulating Al2O3 layers, and the CuPc molecular ensembles have been fabricated and evaluated. The Al2O3 is used to prevent short circuits through the capacitor plates as the molecular layer is considerably thin (electrical measurements of devices with molecular layers of different thicknesses, the CuPc dielectric constant has been reliably determined (k CuPc = 4.5 ± 0.5). These values suggest a mild contribution of the molecular orientation on the CuPc dielectric properties. The reported nanomembrane-based capacitor is a viable strategy for the dielectric characterization of ultrathin molecular ensembles integrated into a practical, real device technology.

''Z'' Facility Dielectric Oil Clean-Up

International Nuclear Information System (INIS)

Alessandri, Daniel; Bloomquist, Doug; Donovan, Guy; Feltz, Greg; Grelle, Nibby; Guthrie, Doug; Harris, Mark; Horry, Mike; Lockas, Mike; Potter, Jimmy; Pritchard, Chuck; Steedly, Jim.

1999-01-01

In August of 1998 the Z facility leaked approximately 150 gallons of deionized water into the dielectric oil of the Energy Storage Section (ESS). After processing the oil to remove existing particulate and free water the dielectric breakdown strength increased from the mid 20kV range to values in excess of 40 kV. 40 kV is above historical operating levels of about 35 kV. This, however, was not enough to allow 90 kV charging of the Marx Generators in the ESS. Further analysis of the oil showed dissolved water at a saturated level (70 - 80 ppm) and some residual particulate contamination smaller than 3 microns. The dissolved water and particulate combination was preventing the 90 kV charging of the Marx Generators in the ESS. After consulting with the oil industry it was determined that nitrogen sparging could be used to remove the dissolved water. Further particulate filtering was also conducted. After approximately 20 hours of sparging the water content in the ESS was reduced to 42 ppm which enabled Marx charging to 90 kV

Eeonomer 200F®: A High-Performance Nanofiller for Polymer Reinforcement—Investigation of the Structure, Morphology and Dielectric Properties of Polyvinyl Alcohol/Eeonomer-200F® Nanocomposites for Embedded Capacitor Applications

Science.gov (United States)

Deshmukh, Kalim; Ahamed, M. Basheer; Deshmukh, Rajendra R.; Sadasivuni, Kishor Kumar; Ponnamma, Deepalekshmi; Pasha, S. K. Khadheer; AlMaadeed, Mariam Al-Ali; Polu, Anji Reddy; Chidambaram, K.

2017-04-01

In the present study, Eeonomer 200F® was used as a high-performance nanofiller to prepare polyvinyl alcohol (PVA)-based nanocomposite films using a simple and eco-friendly solution casting technique. The prepared PVA/Eeonomer nanocomposite films were further investigated using various techniques including Fourier transform infrared spectroscopy, x-ray diffraction, thermogravimetric analysis, polarized optical microscopy, scanning electron microscopy and mechanical testing. The dielectric behavior of the nanocomposites was examined over a broad frequency range from 50 Hz to 20 MHz and temperatures ranging from 40°C to 150°C. A notable improvement in the thermal stability of the PVA was observed with the incorporation of Eeonomer. The nanocomposites also demonstrated improved mechanical properties due to the fine dispersion of the Eeonomer, and good compatibility and strong interaction between the Eeonomer and the PVA matrix. A significant improvement was observed in the dielectric properties of the PVA upon the addition of Eeonomer. The nanocomposites containing 5 wt.% Eeonomer exhibited a dielectric constant of about 222.65 (50 Hz, 150°C), which was 18 times that of the dielectric constant (12.33) of neat PVA film under the same experimental conditions. These results thus indicate that PVA/Eeonomer nanocomposites can be used as a flexible high-k dielectric material for embedded capacitor applications.

In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics

Energy Technology Data Exchange (ETDEWEB)

Tsai, Meng-Chen [Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Lee, Min-Hung [Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei 11677, Taiwan (China); Kuo, Chin-Lung; Lin, Hsin-Chih [Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Chen, Miin-Jang, E-mail: mjchen@ntu.edu.tw [Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan (China)

2016-11-30

Highlights: • The structural and electrical characteristics of the ZrO{sub 2} high-K dielectrics, treated with the in situ atomic layer doping of nitrogen into the top and down regions (top and down nitridation, TN and DN, respectively), were investigated. • The amorphous DN sample has a lower leakage current density (J{sub g}) than the amorphous TN sample, attributed to the formation of SiO{sub x}N{sub y} in the interfacial layer (IL). • The crystalline TN sample exhibited a lower CET and a similar J{sub g} as compared with the crystalline DN sample, which can be ascribed to the suppression of IL regrowth. • The crystalline ZrO{sub 2} with in situ atomic layer doping of nitrogen into the top region exhibited superior scaling limit, electrical characteristics, and reliability. - Abstract: Amorphous and crystalline ZrO{sub 2} gate dielectrics treated with in situ atomic layer nitridation on the top and down regions (top and down nitridation, abbreviated as TN and DN) were investigated. In a comparison between the as-deposited amorphous DN and TN samples, the DN sample has a lower leakage current density (J{sub g}) of ∼7 × 10{sup −4} A/cm{sup 2} with a similar capacitance equivalent thickness (CET) of ∼1.53 nm, attributed to the formation of SiO{sub x}N{sub y} in the interfacial layer (IL). The post-metallization annealing (PMA) leads to the transformation of ZrO{sub 2} from the amorphous to the crystalline tetragonal/cubic phase, resulting in an increment of the dielectric constant. The PMA-treated TN sample exhibits a lower CET of 1.22 nm along with a similar J{sub g} of ∼1.4 × 10{sup −5} A/cm{sup 2} as compared with the PMA-treated DN sample, which can be ascribed to the suppression of IL regrowth. The result reveals that the nitrogen engineering in the top and down regions has a significant impact on the electrical characteristics of amorphous and crystalline ZrO{sub 2} gate dielectrics, and the nitrogen incorporation at the top of crystalline

Maintaining K+ balance on the low-Na+, high-K+ diet

Science.gov (United States)

Cornelius, Ryan J.; Wang, Bangchen; Wang-France, Jun

2016-01-01

A low-Na+, high-K+ diet (LNaHK) is considered a healthier alternative to the “Western” high-Na+ diet. Because the mechanism for K+ secretion involves Na+ reabsorptive exchange for secreted K+ in the distal nephron, it is not understood how K+ is eliminated with such low Na+ intake. Animals on a LNaHK diet produce an alkaline load, high urinary flows, and markedly elevated plasma ANG II and aldosterone levels to maintain their K+ balance. Recent studies have revealed a potential mechanism involving the actions of alkalosis, urinary flow, elevated ANG II, and aldosterone on two types of K+ channels, renal outer medullary K+ and large-conductance K+ channels, located in principal and intercalated cells. Here, we review these recent advances. PMID:26739887

EFFECT OF DIFFERENT COMPACTION PRESSURE AND DIFFERENT SINTERING ROUTE ON K0.5NA0.5NBO₃ PHYSICAL AND DIELECTRIC PROPERTIES

Directory of Open Access Journals (Sweden)

Nor Fatin Khairah Bahanurddin

2016-07-01

Full Text Available Alkaline niobate known as K0.5Na0.5NbO3 (KNN, a lead-free piezoelectric ceramic was synthesized via a solid state reaction method. The samples were compacted at different pressures (100, 200, 300 and 400 MPa and sintered using two different techniques (conventional furnace and hot isostatic pressing (HIP. The effect of compaction pressure and sintering technique on physical and dielectric properties was studied. The optimum compaction pressure (300 MPa and sintering via HIP (at 1080 °C for 30 min increased the density and grain size ( range 30 - 300 nm and improved its dielectric properties. Therefore, the combination of suitable compaction pressure and sintering technique has produced larger grain size and higher density of KNN which resulted in outstanding dielectric properties. At room temperature, excellent values of ε r (5517.35 and tan δ (0.954, recorded at 1 MHz were measured for the KNN300HIP sample with highest density (4.4885 g/cm³.

Investigations on MgO-dielectric GaN/AlGaN/GaN MOS-HEMTs by using an ultrasonic spray pyrolysis deposition technique

International Nuclear Information System (INIS)

Lee, Ching-Sung; Liu, Han-Yin; Wu, Ting-Ting; Hsu, Wei-Chou; Sun, Wen-Ching; Wei, Sung-Yen; Yu, Sheng-Min

2016-01-01

This work investigates GaN/Al 0.24 Ga 0.76 N/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) grown on a Si substrate with MgO gate dielectric by using the non-vacuum ultrasonic spray pyrolysis deposition (USPD) technique. The oxide layer thickness is tuned to be 30 nm with the dielectric constant of 8.8. Electron spectroscopy for chemical analysis (ESCA), secondary ion mass spectrometry (SIMS), atomic force microscopy (AFM), transmission electron microscopy (TEM), C–V, low-frequency noise spectra, and pulsed I–V measurements are performed to characterize the interface and oxide quality for the MOS-gate structure. Improved device performances have been successfully achieved for the present MOS-HEMT (Schottky-gate HEMT) design, consisting of a maximum drain-source current density (I DS, max ) of 681 (500) mA/mm at V GS  = 4 (2) V, I DS at V GS  = 0 V (I DSS0 ) of 329 (289) mA/mm, gate-voltage swing (GVS) of 2.2 (1.6) V, two-terminal gate-drain breakdown voltage (BV GD ) of −123 (−104) V, turn-on voltage (V on ) of 1.7 (0.8) V, three-terminal off-state drain-source breakdown voltage (BV DS ) of 119 (96) V, and on/off current ratio (I on /I off ) of 2.5 × 10 8 (1.2 × 10 3 ) at 300 K. Improved high-frequency and power performances are also achieved in the present MOS-HEMT design. (paper)

Silicone elastomers with high dielectric permittivity and high dielectric breakdown strength based on tunable functionalized copolymers

DEFF Research Database (Denmark)

Madsen, Frederikke Bahrt; Yu, Liyun; Daugaard, Anders Egede

2015-01-01

system, with respect to functionalization, is achieved. It is investigated how the different functionalization variables affect essential DE properties, including dielectric permittivity, dielectric loss, elastic modulus and dielectric breakdown strength, and the optimal degree of chemical......%) was obtained without compromising other vital DE properties such as elastic modulus, gel fraction, dielectric and viscous loss and electrical breakdown strength....

Dielectric, ferroelectric and piezoelectric properties of Nb{sup 5+} doped BCZT ceramics

Energy Technology Data Exchange (ETDEWEB)

Parjansri, Piewpan [Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, 50200 Chiang Mai (Thailand); Intatha, Uraiwan [School of Science, Mae Fah Luang University, 57100 Chiang Rai (Thailand); Eitssayeam, Sukum, E-mail: sukum99@yahoo.com [Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, 50200 Chiang Mai (Thailand); Materials Science Research Center, Faculty of Science, Chiang Mai University, 50200 Chiang Mai (Thailand)

2015-05-15

Highlights: • Average grain size of BCZT ceramic decreased with the increasing Nb{sup 5+} doping. • Dielectric constant value is enhanced with Nb{sup 5+} doping. • Dielectric loss of BCZT − x Nb{sup 5+} ceramics was less than 0.03 at room temperature (1 kHz). • Piezoelectric coefficient decreased with the increasing Nb{sup 5+} doping. • The relaxation behavior is enhanced with the doping of Nb{sup 5+}. - Abstract: This work investigated the electrical properties of Nb{sup 5+} (0.0–1.0 mol%) doped with Ba{sub 0.90}Ca{sub 0.10}Zr{sub 0.10}Ti{sub 0.90}O{sub 3} while adding 1 mol% of Ba{sub 0.90}Ca{sub 0.10}Zr{sub 0.10}Ti{sub 0.90}O{sub 3} seeds. The mixed powder was ball milled for 24 h, calcined and sintered at 1200 °C for 2 h and 1450 °C for 4 h, respectively. The XRD patterns of the ceramic samples were investigated by X-ray diffraction. The electrical properties of ceramics were measured and the results indicated that all samples show a pure perovskite phase with no secondary phase. Density and average grain size values were in the range of 5.60–5.71 g/cm{sup 3} and 12.62–1.86 μm, respectively. The highest dielectric constant, ϵ{sub r} at room temperature (1 kHz) was 4636 found at 1.0 mol% Nb. The dielectric loss, tan δ was less than 0.03 for all samples at room temperature (1 kHz). Other electrical properties, P{sub r}, d{sub 33} and k{sub p} values were decreased with Nb doped relates to the decreasing grain size in BCZT ceramics. Moreover, the degrees of phase transition diffuseness and relaxation behavior were observed in the higher Nb doping.

Radio frequency and capacitive sensors for dielectric characterization of low-conductivity media

Science.gov (United States)

Sheldon, Robert T.

Low-conductivity media are found in a vast number of applications, for example as electrical insulation or as the matrix polymer in high strength-to-weight ratio structural composites. In some applications, these materials are subjected to extreme environmental, thermal, and mechanical conditions that can affect the material's desired performance. In a more general sense, a medium may be comprised of one or more layers with unknown material properties that may affect the desired performance of the entire structure. It is often, therefore, of great import to be able to characterize the material properties of these media for the purpose of estimating their future performance in a certain application. Low-conductivity media, or dielectrics, are poor electrical conductors and permit electromagnetic waves and static electric fields to pass through with minimal attenuation. The amount of electrical energy that may be stored (and lost) in these fields depends directly upon the material property, permittivity, which is generally complex, frequency-dependent and has a measurable effect on sensors designed to characterize dielectric media. In this work, two different types of dielectric sensors: radio frequency resonant antennas and lower-frequency (work, the capability of characterizing multilayer dielectric structures is studied using a patch antenna, a type of antenna that is primarily designed for data communications in the microwave bands but has application in the field of nondestructive evaluation as well. Each configuration of a patch antenna has a single lowest resonant (dominant mode) frequency that is dependent upon the antenna's substrate material and geometry as well as the permittivity and geometry of exterior materials. Here, an extant forward model is validated using well-characterized microwave samples and a new method of resonant frequency and quality factor determination from measured data is presented. Excellent agreement between calculated and measured

Investigation on dielectric relaxation of PMMA-grafted natural rubber incorporated with LiCF{sub 3}SO{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Yap, K.S.; Teo, L.P.; Sim, L.N.; Majid, S.R. [Centre for Ionics University of Malaya, Physics Department, University of Malaya, 50603 Kuala Lumpur (Malaysia); Arof, A.K., E-mail: akarof@um.edu.my [Centre for Ionics University of Malaya, Physics Department, University of Malaya, 50603 Kuala Lumpur (Malaysia)

2012-07-01

Natural rubber (NR) grafted with 30 wt% poly (methyl methacrylate) (PMMA) and designated as MG30 has been added with varying amounts of LiCF{sub 3}SO{sub 3}. X-ray diffraction (XRD) shows the samples to be amorphous. Fourier transform infrared (FTIR) spectroscopy indicates complexation between the cation of the salt and the oxygen atom of the C=O and -COO- groups of MG30. From electrochemical impedance spectroscopy (EIS), MG30 with 30 wt% LiCF{sub 3}SO{sub 3} salt exhibits the highest ambient conductivity of 1.69 Multiplication-Sign 10{sup -6} S cm{sup -1} and lowest activation energy of 0.24 eV. The dielectric behavior has been analyzed using dielectric permittivity ({epsilon} Prime), dissipation factor (tan {delta}) and dielectric modulus (M{sup Low-Asterisk }) of the samples. The dielectric constant of pure MG30 has been estimated to be {approx}1.86.

Relaxations and fast dynamics of the plastic crystal cyclo-octanol investigated by broadband dielectric spectroscopy

OpenAIRE

Lunkenheimer, Peter

1997-01-01

Relaxations and fast dynamics of the plastic crystal cyclo-octanol investigated by broadband dielectric spectroscopy / R. Brand, P. Lunkenheimer, A. Loidl. - In: Physical review. B. 56. 1997. S. R5713-R5716

Dielectric Relaxation Behavior of Bismuth Doped (Ba0.2Sr0.8 TiO3 Ceramics

Directory of Open Access Journals (Sweden)

Baptista, J. L.

1999-12-01

Full Text Available The dielectric properties of bismuth doped (Ba0.2Sr0.8TiO3 ceramics are investigated. The temperature dependence of the dielectric permittivity and loss factor were measured from 102 to 106Hz in the temperature range 12-320K. As the amount of Bi increases, the ferroelectric-paraelectric phase transition gets diffused and relaxed. In addition to this ferroelectric-paraelectric phase transition, other two sets of dielectric anomalies, located at 50-100K and 200-300K respectively, are also found. The possible relaxation mechanisms are briefly discussed.Las propiedades dieléctricas de cerámicos dopados con bismuto son investigadas. La dependencia con la temperatura de la permitividad dieléctrica y el factor de pérdidas se midieron entre 02 y 106Hz en el rango de temperatura 12-320K. Con el aumento del contenido en Bi, la transición de fase ferroeléctrica-paraléctrica se hace difusa y reloja. Junto a esta transición de fase los conjuntos de anomalías dieléctricas, localizados a 50-100k y 200-300k respectivamente, también se encontraron. Se discute brevemente los posibles mecanismos de relajación.

Sub-Micrometer Zeolite Films on Gold-Coated Silicon Wafers with Single-Crystal-Like Dielectric Constant and Elastic Modulus

Energy Technology Data Exchange (ETDEWEB)

Tiriolo, Raffaele [Department of Medical and Surgical Sciences, University Magna Graecia of Catanzaro, Viale Europa 88100 Catanzaro Italy; Rangnekar, Neel [Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Ave SE Minneapolis MN 55455 USA; Zhang, Han [Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Ave SE Minneapolis MN 55455 USA; Shete, Meera [Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Ave SE Minneapolis MN 55455 USA; Bai, Peng [Department of Chemistry and Chemistry Theory Center, University of Minnesota, 207 Pleasant St SE Minneapolis MN 55455 USA; Nelson, John [Characterization Facility, University of Minnesota, 12 Shepherd Labs, 100 Union St. S.E. Minneapolis MN 55455 USA; Karapetrova, Evguenia [Surface Scattering and Microdiffraction, X-ray Science Division, Argonne National Laboratory, 9700 S. Cass Ave, Building 438-D002 Argonne IL 60439 USA; Macosko, Christopher W. [Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Ave SE Minneapolis MN 55455 USA; Siepmann, Joern Ilja [Department of Chemistry and Chemistry Theory Center, University of Minnesota, 207 Pleasant St SE Minneapolis MN 55455 USA; Lamanna, Ernesto [Department of Health Sciences, University Magna Graecia of Catanzaro, Viale Europa 88100 Catanzaro Italy; Lavano, Angelo [Department of Medical and Surgical Sciences, University Magna Graecia of Catanzaro, Viale Europa 88100 Catanzaro Italy; Tsapatsis, Michael [Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Ave SE Minneapolis MN 55455 USA

2017-05-08

A low-temperature synthesis coupled with mild activation produces zeolite films exhibiting low dielectric constant (low-k) matching the theoretically predicted and experimentally measured values for single crystals. This synthesis and activation method allows for the fabrication of a device consisting of a b-oriented film of the pure-silica zeolite MFI (silicalite-1) supported on a gold-coated silicon wafer. The zeolite seeds are assembled by a manual assembly process and subjected to optimized secondary growth conditions that do not cause corrosion of the gold underlayer, while strongly promoting in-plane growth. The traditional calcination process is replaced with a non-thermal photochemical activation to ensure preservation of an intact gold layer. The dielectric constant (k), obtained through measurement of electrical capacitance in a metal-insulator-metal configuration, highlights the ultralow k approximate to 1.7 of the synthetized films, which is among the lowest values reported for an MFI film. There is large improvement in elastic modulus of the film (E approximate to 54 GPa) over previous reports, potentially allowing for integration into silicon wafer processing technology.

Low-temperature conductivity of tunnel-coupled quantum dots system in YBaCuO and LaSrMnO dielectric films

CERN Document Server

Okunev, V D; Isaev, V A; Dyachenko, A T; Klimov, A; Lewandowski, S J

2002-01-01

Paper contains new experimental data concerning investigation into the nature of rho(T) approx = const conductivity segments at T < T sub c for YBaCuO and LaSrMnO dielectric films prepared by means of laser deposition and containing nanocrystalline clusters with metallic conductivity. In YBaCuO epitaxial films with a tetragonal structure rho = rho(T) approx = const (T sub c = 10 K) dependences are observed following the effect of (KrF) excimer laser emission on the specimens, while in LaSrMnO amorphous films (T sub c approx = 160 K) - immediately after they are prepared. rho(T) approx = const effect manifests itself if in the optical spectra of specimens there are regions of absorption by free charge carriers and is associated with a tunnel conductivity of a system of quantum points

Poly(vinylidene fluoride) Flexible Nanocomposite Films with Dopamine-Coated Giant Dielectric Ceramic Nanopowders, Ba(Fe0.5Ta0.5)O3, for High Energy-Storage Density at Low Electric Field.

Science.gov (United States)

Wang, Zhuo; Wang, Tian; Wang, Chun; Xiao, Yujia; Jing, Panpan; Cui, Yongfei; Pu, Yongping

2017-08-30

Ba(Fe 0.5 Ta 0.5 )O 3 /poly(vinylidene fluoride) (BFT/PVDF) flexible nanocomposite films are fabricated by tape casting using dopamine (DA)-modified BFT nanopowders and PVDF as a matrix polymer. After a surface modification of installing a DA layer with a thickness of 5 nm, the interfacial couple interaction between BFT and PVDF is enhanced, resulting in less hole defects at the interface. Then the dielectric constant (ε'), loss tangent (tan δ), and AC conductivity of nanocomposite films are reduced. Meanwhile, the value of the reduced dielectric constant (Δε') and the strength of interfacial polarization (k) are introduced to illustrate the effect of DA on the dielectric behavior of nanocomposite films. Δε' can be used to calculate the magnitude of interfacial polarization, and the strength of the dielectric constant contributed by the interface can be expressed as k. Most importantly, the energy-storage density and energy-storage efficiency of nanocomposite films with a small BFT@DA filler content of 1 vol % at a low electric field of 150 MV/m are enhanced by about 15% and 120%, respectively, after DA modification. The high energy-storage density of 1.81 J/cm 3 is obtained in the sample. This value is much larger than the reported polymer-based nanocomposite films. In addition, the outstanding cycle and bending stability of the nanocomposite films make it a promising candidate for future flexible portable energy devices.

STRUCTURAL CHARACTERISTICS & DIELECTRIC PROPERTIES OF TANTALUM OXIDE DOPED BARIUM TITANATE BASED MATERIALS

Directory of Open Access Journals (Sweden)

Md. Fakhrul Islam

2013-01-01

Full Text Available In this research, the causal relationship between the dielectric properties and the structural characteristics of 0.5 & 1.0 mole % Ta2O5 doped BaTiO3 based ceramic materials were investigated under different sintering conditions. Dielectric properties and microstructure of BaTio3 ceramics were significantly influenced by the addition of a small amount of Ta2O5. Dielectric properties were investigated by measuring the dielectric constant (k as a function of temperature and frequency. Percent theoretical density (%TD above 90 % was achieved for 0.5 and 1.0 mole %Ta2O5 doped BaTiO3. It was observed that the grain size decreased markedly above a doping concentration of 0.5 mole % Ta2O5. Although fine grain size down to 200 - 300 nm was attained, grain sizes in the range of 1-1.8µm showed the most alluring properties. The fine-grain quality and high density of the Ta2O5 doped BaTiO3 ceramic resulted in tenfold increase of dielectric constant. Stable value of dielectric constant as high as 13000 - 14000 was found in the temperature range of 55 to 80 °C, for 1.0 mole % Ta2O5 doped samples with corresponding shift of Curie point to ~82 °C. Experiments divulged that incorporation of a proper content of Ta2O5 in BaTiO3 could control the grain growth, shift the Curie temperature and hence significantly improve the dielectric property of the BaTiO3 ceramics.

Growth and physical properties of highly oriented La-doped (K,Na)NbO3 ferroelectric thin films

International Nuclear Information System (INIS)

Vendrell, X.; Raymond, O.; Ochoa, D.A.; García, J.E.; Mestres, L.

2015-01-01

Lead-free (K,Na)NbO 3 (KNN) and La doped (K,Na)NbO 3 (KNN-La) thin films are grown on SrTiO 3 substrates using the chemical solution deposition method. The effect of adding different amounts of Na and K excess (0–20 mol%) is investigated. The results confirm the necessity of adding 20 mol% excess amounts of Na and K precursor solutions in order to avoid the formation of the secondary phase, K 4 Nb 6 O 17 , as confirmed by X-ray diffraction and Raman spectroscopy. Moreover, when adding a 20 mol% of alkaline metal excess, the thin films are highly textured with out-of-plane preferential orientation in the [100] direction of the [100] orientation of the substrate. Doping with lanthanum results in a decrease of the leakage current density at low electric field, and an increase in the dielectric permittivity across the whole temperature range (80–380 K). Although the (100)-oriented KNN and KNN-La films exhibited rounded hysteresis loops, at low temperatures the films show the typical ferroelectric hysteresis loops. - Highlights: • (K 0.5 Na 0.5 )NbO 3 and [(K 0.5 Na 0.5 ) 0.985 La 0.005 ]NbO 3 thin films have been prepared. • The obtained thin films show an excellent (100) preferred orientation. • Doping with lanthanum results in a decrease of the leakage current density. • The dielectric properties are enhanced when doping with lanthanum

Silicone elastomers with superior softness and dielectric properties

DEFF Research Database (Denmark)

Yu, Liyun; Madsen, Frederikke Bahrt; Zakaria, Shamsul Bin

Dielectric elastomers (DEs) change their shape and size under a high voltage or reversibly generate a high voltage when deformed. The obstacle of high driving voltages, however, limits the commercial viability of the technology at present. Driving voltage can be lowered by decreasing the Young......’s modulus and increasing the dielectric permittivity of silicone elastomers. One such prominent method of modifying the properties is by adding suitable additives. [1] The major drawbacks for adding solid fillers are agglomeration and increasing stiffness which is often accompanied by the decrease...... were determined by NMR and morphology structures were investigated by optical microscopy. The resulting elastomers were evaluated with respect to their dielectric permittivity, tear and tensile strengths, as well as electrical breakdown.The breakdown strength increased at low amounts of additives...

Supercooled interfacial water in fine-grained soils probed by dielectric spectroscopy

Directory of Open Access Journals (Sweden)

A. Lorek

2013-12-01

Full Text Available Water substantially affects nearly all physical, chemical and biological processes on the Earth. Recent Mars observations as well as laboratory investigations suggest that water is a key factor of current physical and chemical processes on the Martian surface, e.g. rheological phenomena. Therefore it is of particular interest to get information about the liquid-like state of water on Martian analogue soils for temperatures below 0 °C. To this end, a parallel plate capacitor has been developed to obtain isothermal dielectric spectra of fine-grained soils in the frequency range from 10 Hz to 1.1 MHz at Martian-like temperatures down to −70 °C. Two Martian analogue soils have been investigated: a Ca-bentonite (specific surface of 237 m2 g−1, up to 9.4% w / w gravimetric water content and JSC Mars 1, a volcanic ash (specific surface of 146 m2 g−1, up to 7.4% w / w. Three soil-specific relaxation processes are observed in the investigated frequency–temperature range: two weak high-frequency processes (bound or hydrated water as well as ice and a strong low-frequency process due to counter-ion relaxation and the Maxwell–Wagner effect. To characterize the dielectric relaxation behaviour, a generalized fractional dielectric relaxation model was applied assuming three active relaxation processes with relaxation time of the ith process modelled with an Eyring equation. The real part of effective complex soil permittivity at 350 kHz was used to determine ice and liquid-like water content by means of the Birchak or CRIM equation. There are evidence that bentonite down to −70 °C has a liquid-like water content of 1.17 monolayers and JSC Mars 1 a liquid-like water content of 1.96 monolayers.

Temperature Effects of Dielectric Properties of ER Fluids

Science.gov (United States)

Qiu, Z. Y.; Hu, L.; Liu, M. W.; Bao, H. X.; Jiang, Y. G.; Zhou, L. W.; Tang, Y.; Gao, Z.; Sun, M.; Korobko, E. V.

Under the consideration of the role that energy transfer and dissipation play in ER effect, an improved theory frame for ER effects, polarization-dissipation-structure-rheology, is suggested. The theory frame is substantiated by the basic physical laws and certain critical experimental facts. The dielectric response of a diatomite ER fluid to temperature is measured in the temperature range of 140 K to 400 K. By comparison of the DC conductivity with the AC effective conductivity of the sample, we found that the AC dielectric loss consists of two parts. One part comes from the DC conductivity, the other from the response of the bound charges in scope of particle to AC field. It is suggested that the response of bound charges is very important to ER effects. Besides, the effect of temperature on shear stress is measured, and interpreted based on the dielectric measurements. The source of two loss peaks in the curve of the dielectric loss versus temperature is not clear.

Molecular dynamics simulations of the dielectric properties of fructose aqueous solutions

International Nuclear Information System (INIS)

Sonoda, Milton T; Dolores Elola, M; Skaf, Munir S

2016-01-01

The static dielectric permittivity and dielectric relaxation properties of fructose aqueous solutions of different concentrations ranging from 1.0 to 4.0 mol l −1 are investigated by means of molecular dynamics simulations. The contributions from intra- and interspecies molecular correlations were computed individually for both the static and frequency-dependent dielectric properties, and the results were compared with the available experimental data. Simulation results in the time- and frequency-domains were analyzed and indicate that the presence of fructose has little effect on the position of the fast, high-frequency (>500 cm −1 ) components of the dielectric response spectrum. The low-frequency (<0.1 cm −1 ) components, however, are markedly influenced by sugar concentration. Our analysis indicates that fructose–fructose and fructose–water interactions strongly affect the rotational-diffusion regime of molecular motions in the solutions. Increasing fructose concentration not only enhances sugar–sugar and sugar-water low frequency contributions to the dielectric loss spectrum but also slows down the reorientational dynamics of water molecules. These results are consistent with previous computer simulations carried out for other disaccharide aqueous solutions. (paper)

Measurements of the anomalous RF surface resistance of niobium using a dielectric resonator

International Nuclear Information System (INIS)

Moffat, D.; Bolore, M.; Bonin, B.; Jacques, E.; Safa, H.

1996-01-01

The surface resistance of high and low residual resistance ratio (RRR) niobium plates at 4.2 K and 1.8 K has been measured as a function of many processing and testing parameters. A dielectric resonator was used instead of a resonant cavity. This resonator offered the ability to make many, sensitive measurements with an efficient use of time and helium. It was found that the surface resistance, R s , of RRR = 190 niobium increased noticeably from the theoretical value if the cooling rate was slower than ∼ 10 K/min. (author)

Investigations of the mechanical loss of tantala films between 5 and 300 K

Energy Technology Data Exchange (ETDEWEB)

Hudl, Matthias; Nawrodt, Ronny; Zimmer, Anja; Nietzsche, Sandor; Vodel, Wolfgang; Seidel, Paul [Friedrich Schiller University (Germany); Tuennermann, Andreas [Institute of Solid-State Physics, Helmholtzweg 5, D-07743 Jena (Germany),; Friedrich Schiller University-Institute of Applied Physics, Jena (Germany)

2007-07-01

Mechanical losses in dielectric mirror coatings of interferometric gravitational wave detectors are a main issue for the proposed advanced generation of gravitational wave detectors. Recent investigations have shown that the mechanical loss of the dielectric mirror coatings (tantala/silica stacks) is probably the main contribution to the detector noise. There are indications that among both coating materials tantala gives the major contribute to mechanical loss. Experimental details of a measuring setup and investigations of the temperature dependency of the mechanical dissipation in thin tantala films on different substrates are presented.

High mobility and low operating voltage ZnGaO and ZnGaLiO transistors with spin-coated Al2O3 as gate dielectric

International Nuclear Information System (INIS)

Xia, D X; Xu, J B

2010-01-01

Spin-coated alumina serving as a gate dielectric in thin film transistors shows interesting dielectric properties for low-voltage applications, despite a moderate capacitance. With Ga singly doped and Ga, Li co-doped ZnO as the active channel layers, typical mobilities of 4.7 cm 2 V -1 s -1 and 2.1 cm 2 V -1 s -1 are achieved, respectively. At a given gate bias, the operation current is much smaller than the previously reported values in low-voltage thin film transistors, primarily relying on the giant-capacitive dielectric. The reported devices combine advantages of high mobility, low power consumption, low cost and ease of fabrication. In addition to the transparent nature of both the dielectric and semiconducting active channels, the superior electrical properties of the devices may provide a new avenue for future transparent electronics. (fast track communication)

Dielectric and thermal properties of isotactic polypropylene/hexagonal boron nitride composites for high-frequency applications

International Nuclear Information System (INIS)

Takahashi, Susumu; Imai, Yusuke; Kan, Akinori; Hotta, Yuji; Ogawa, Hirotaka

2014-01-01

Highlights: • The degree of orientation of the hBN could be controlled by the fabrication process. • The dielectric constants of composites ranged between 2.25 and 3.39. • The dielectric loss of composites was on the order of 10 −4 for all compositions. • The thermal conductivity were improved by controlling orientation of hBN. - Abstract: Dielectric composites aimed for high frequency applications were prepared by using anisotropic hexagonal boron nitride (hBN) particles as a fillers and isotactic polypropylene (iPP) as polymer matrix. Dielectric and thermal properties of the composites were studied, focusing on the filler orientation in the plate-shape specimens and filler concentration up to 40 vol%. The degree of orientation of the filler was controlled by the composite fabrication process. Hot-pressing gave relatively random orientation of the filler in the matrix, while injection molding induced a high orientation. Dielectric constant (ε r ) of the composites ranged between 2.25 and 3.39. The estimation of ε r based on the Bruggeman mixing model agreed well with the measured value. Low dielectric losses (tan δ) at microwave frequencies, on the order of 10 −4 , were obtained for all the compositions. Through-thickness thermal conductivity (k) of the hot-pressed samples showed a drastic increase with increasing the filler concentration, reaching up to 2.1 W/m K at 40 vol% of hBN. The filler concentration dependence of k was less significant for the injection molded composites. In-plane thermal expansion was almost independent on the filler orientation, while the coefficient of thermal expansion for the thickness direction of the hot-pressed sample was reduced to approximately half of the injection molded counterpart. These differences in thermal conductivity and thermal expansion are thought to arise from the difference in hBN filler orientation

Decorating TiO2 Nanowires with BaTiO3 Nanoparticles: A New Approach Leading to Substantially Enhanced Energy Storage Capability of High-k Polymer Nanocomposites.

Science.gov (United States)

Kang, Da; Wang, Guanyao; Huang, Yanhui; Jiang, Pingkai; Huang, Xingyi

2018-01-31

The urgent demand of high energy density and high power density devices has triggered significant interest in high dielectric constant (high-k) flexible nanocomposites comprising dielectric polymer and high-k inorganic nanofiller. However, the large electrical mismatch between polymer and nanofiller usually leads to earlier electric failure of the nanocomposites, resulting in an undesirable decrease of electrical energy storage capability. A few studies show that the introduction of moderate-k shell onto a high-k nanofiller surface can decrease the dielectric constant mismatch, and thus, the corresponding nanocomposites can withstand high electric field. Unfortunately, the low apparent dielectric enhancement of the nanocomposites and high electrical conductivity mismatch between matrix and nanofiller still result in low energy density and low efficiency. In this study, it is demonstrated that encapsulating moderate-k nanofiller with high-k but low electrical conductivity shell is effective to significantly enhance the energy storage capability of dielectric polymer nanocomposites. Specifically, using BaTiO 3 nanoparticles encapsulated TiO 2 (BaTiO 3 @TiO 2 ) core-shell nanowires as filler, the corresponding poly(vinylidene fluoride-co-hexafluoropylene) nanocomposites exhibit superior energy storage capability in comparison with the nanocomposites filled by either BaTiO 3 or TiO 2 nanowires. The nanocomposite film with 5 wt % BaTiO 3 @TiO 2 nanowires possesses an ultrahigh discharged energy density of 9.95 J cm -3 at 500 MV m -1 , much higher than that of commercial biaxial-oriented polypropylene (BOPP) (3.56 J cm -3 at 600 MV m -1 ). This new strategy and corresponding results presented here provide new insights into the design of dielectric polymer nanocomposites with high electrical energy storage capability.

Experimental investigation on NOx removal using pulsed dielectric barrier discharges in combination with catalysts

NARCIS (Netherlands)

Chirumamilla, V.R.; Hoeben, W.F.L.M.; Beckers, F.J.C.M.; Huiskamp, T.; Pemen, A.J.M.

2015-01-01

In this study, an experimental investigation of the removal of NOx has been carried out with a dielectric barrier discharge reactor filled with different catalytic materials. NOx removal efficiency and by-products formation were studied as a function of energy density using plasma catalytic

Dielectric relaxations in non-metallic materials related to Y-Ba-Cu-O superconductors

Energy Technology Data Exchange (ETDEWEB)

Bennani, H.; Pilet, J.C. (Lab. Instrumentation, Rennes-1 Univ., 35 (France)); Guilloux-Viry, M.; Perrin, C.; Perrin, A.; Sergent, M. (Lab. de Chimie Minerale B, C.N.R.S., 35 - Rennes (France))

1990-10-15

In relation with high Tc superconducting material studies, dielectric measurements have been carried out, in the frequency range 10 Hz - 100 kHz, on two powdered compounds belonging to the Y-Ba-Cu-O system. The non-metallic tetragonal phases YBa{sub 2}Cu{sub 3}O{sub 6+x} exhibit dielectric relaxations: for the studied samples (x<0.4) the activation energy U is observed in the range 0.5dielectric relaxation has been detected at higher temperature, near 400 K. Additional measurements to 77 K at 1 MHz give a value of dielectric constant {epsilon}'=3 and a low loss factor tg{delta}=10{sup -3}: this latter value is comparable to the one of lanthanum gallate recently proposed as a substrate for high frequency uses. This result enhances the previously reported potential interest of this material as substrate or buffer layer for preparation of superconducting thin films for high frequency applications. (orig.).

Low frequency complex dielectric (conductivity) response of dilute clay suspensions: Modeling and experiments.

Science.gov (United States)

Hou, Chang-Yu; Feng, Ling; Seleznev, Nikita; Freed, Denise E

2018-04-11

In this work, we establish an effective medium model to describe the low-frequency complex dielectric (conductivity) dispersion of dilute clay suspensions. We use previously obtained low-frequency polarization coefficients for a charged oblate spheroidal particle immersed in an electrolyte as the building block for the Maxwell Garnett mixing formula to model the dilute clay suspension. The complex conductivity phase dispersion exhibits a near-resonance peak when the clay grains have a narrow size distribution. The peak frequency is associated with the size distribution as well as the shape of clay grains and is often referred to as the characteristic frequency. In contrast, if the size of the clay grains has a broad distribution, the phase peak is broadened and can disappear into the background of the canonical phase response of the brine. To benchmark our model, the low-frequency dispersion of the complex conductivity of dilute clay suspensions is measured using a four-point impedance measurement, which can be reliably calibrated in the frequency range between 0.1 Hz and 10 kHz. By using a minimal number of fitting parameters when reliable information is available as input for the model and carefully examining the issue of potential over-fitting, we found that our model can be used to fit the measured dispersion of the complex conductivity with reasonable parameters. The good match between the modeled and experimental complex conductivity dispersion allows us to argue that our simplified model captures the essential physics for describing the low-frequency dispersion of the complex conductivity of dilute clay suspensions. Copyright © 2018 Elsevier Inc. All rights reserved.

The Study of Electrical Properties for Multilayer La2O3/Al2O3 Dielectric Stacks and LaAlO3 Dielectric Film Deposited by ALD.

Science.gov (United States)

Feng, Xing-Yao; Liu, Hong-Xia; Wang, Xing; Zhao, Lu; Fei, Chen-Xi; Liu, He-Lei

2017-12-01

The capacitance and leakage current properties of multilayer La 2 O 3 /Al 2 O 3 dielectric stacks and LaAlO 3 dielectric film are investigated in this paper. A clear promotion of capacitance properties is observed for multilayer La 2 O 3 /Al 2 O 3 stacks after post-deposition annealing (PDA) at 800 °C compared with PDA at 600 °C, which indicated the recombination of defects and dangling bonds performs better at the high-k/Si substrate interface for a higher annealing temperature. For LaAlO 3 dielectric film, compared with multilayer La 2 O 3 /Al 2 O 3 dielectric stacks, a clear promotion of trapped charges density (N ot ) and a degradation of interface trap density (D it ) can be obtained simultaneously. In addition, a significant improvement about leakage current property is observed for LaAlO 3 dielectric film compared with multilayer La 2 O 3 /Al 2 O 3 stacks at the same annealing condition. We also noticed that a better breakdown behavior for multilayer La 2 O 3 /Al 2 O 3 stack is achieved after annealing at a higher temperature for its less defects.

Conduction mechanism and the dielectric relaxation process of a-Se75Te25-xGax (x=0, 5, 10 and 15 at wt%) chalcogenide glasses

International Nuclear Information System (INIS)

Yahia, I.S.; Hegab, N.A.; Shakra, A.M.; Al-Ribaty, A.M.

2012-01-01

Se 75 Te 25-x Ga x (x=0, 5, 10 and 15 at wt%) chalcogenide compositions were prepared by the well known melt quenching technique. Thin films with different thicknesses in the range (185-630 nm) of the obtained compositions were deposited by thermal evaporation technique. X-ray diffraction patterns indicate that the amorphous nature of the obtained films. The ac conductivity and the dielectric properties of the studied films have been investigated in the frequency range (10 2 -10 5 Hz) and in the temperature range (293-333 K). The ac conductivity was found to obey the power low ω s where s≤1 independent of film thickness. The temperature dependence of both ac conductivity and the exponent s can be well interpreted by the correlated barrier hopping (CBH) model. The experimental results of the dielectric constant ε 1 and dielectric loss ε 2 are frequency and temperature dependent. The maximum barrier height W m calculated from the results of the dielectric loss according to the Guintini equation, and agrees with that proposed by the theory of hopping of charge carriers over a potential barrier as suggested by Elliott for chalcogenide glasses. The density of localized state was estimated for the studied film compositions. The variation of the studied properties with Ga content was also investigated. The correlation between the ac conduction and the dielectric properties were verified.

Hybrid nanomembrane-based capacitors for the determination of the dielectric constant of semiconducting molecular ensembles.

Science.gov (United States)

Petrini, Paula Andreia; Lopes da Silva, Ricardo Magno; de Oliveira, Rafael Furlan; Merces, Leandro; Bufon, Carlos César Bof

2018-04-06

Considerable advances in the field of molecular electronics have been achieved over the recent years. One persistent challenge, however, is the exploitation of the electronic properties of molecules fully integrated into devices. Typically, the molecular electronic properties are investigated using sophisticated techniques incompatible with a practical device technology, such as the scanning tunneling microscope (STM). The incorporation of molecular materials in devices is not a trivial task since the typical dimensions of electrical contacts are much larger than the molecular ones. To tackle this issue, we report on hybrid capacitors using mechanically-compliant nanomembranes to encapsulate ultrathin molecular ensembles for the investigation of molecular dielectric properties. As the prototype material, copper (II) phthalocyanine (CuPc) has been chosen as information on its dielectric constant (kCuPc) at the molecular scale is missing. Here, hybrid nanomembrane-based capacitors containing metallic nanomembranes, insulating Al2O3 layers, and the CuPc molecular ensemble have been fabricated and evaluated. The Al2O3 is used to prevent short circuits through the capacitor plates as the molecular layer is considerably thin (< 30 nm). From the electrical measurements of devices with molecular layers of different thicknesses, the CuPc dielectric constant has been reliably determined (kCuPc = 4.5 ± 0.5). These values suggest a mild contribution of molecular orientation in the CuPc dielectric properties. The reported nanomembrane-based capacitor is a viable strategy for the dielectric characterization of ultrathin molecular ensembles integrated into a practical, real device technology. © 2018 IOP Publishing Ltd.

Study made of dielectric properties of promising materials for cryogenic capacitors

Science.gov (United States)

Mathes, K. N.; Minnich, S. H.

1967-01-01

Experimental investigations were conducted to determine dielectric properties of promising materials for cryogenic capacitors to be used in energy storage and pulse applications. The three classes of materials investigated were inorganic bonded ferroelectric materials, anodic coatings on metal foils, and polar low temperature liquids.

Investigation of the phase formation and dielectric properties of Bi7Ta3O18

International Nuclear Information System (INIS)

Chon, M.P.; Tan, K.B.; Khaw, C.C.; Zainal, Z.; Taufiq Yap, Y.H.; Chen, S.K.; Tan, P.Y.

2014-01-01

Highlights: • Synthesis condition of Bi 7 TaO 3 O 18 had been determined. • Recombination of intermediate BiTaO 4 and Bi 3 TaO 7 phases are required for the Bi 7 TaO 3 O 18 phase formation. • Stable material as confirmed by thermal and structural analyses. • Typical ferroelectric showing high dielectric constants and low losses. • Resonance and thermal activated polarisation processes are responsible for the excellent dielectric characteristic. -- Abstract: Polycrystalline Bi 7 Ta 3 O 18 was synthesised at the firing temperature of 950 °C over 18 h via conventional solid state method. It crystallised in a monoclinic system with space group C2/m, Z = 4 similar to that reported diffraction pattern in the Inorganic Crystal Structure Database (ICSD), 1-89-6647. The refined lattice parameters were a = 34.060 (3) Å, b = 7.618 (9) Å, c = 6.647 (6) Å with α = γ = 90° and β = 109.210 (7), respectively. The intermediate phase was predominantly in high-symmetry cubic structure below 800 °C and finally evolved into a low-symmetry monoclinic structured, Bi 7 Ta 3 O 18 at 950 °C. The sample contained grains of various shapes with different orientations in the size ranging from 0.33–22.70 μm. The elemental analysis showed the sample had correct stoichiometry with negligible Bi 2 O 3 loss. Bi 7 Ta 3 O 18 was thermally stable and it exhibited a relatively high relative permittivity, 241 and low dielectric loss, 0.004 at room temperature, ∼30 °C and frequency of 1 MHz

Dielectric Wakefield Accelerator to drive the future FEL Light Source.

Energy Technology Data Exchange (ETDEWEB)

Jing, C.; Power, J.; Zholents, A. (Accelerator Systems Division (APS)); ( HEP); (LLC)

2011-04-20

X-ray free-electron lasers (FELs) are expensive instruments and a large part of the cost of the entire facility is driven by the accelerator. Using a high-energy gain dielectric wake-field accelerator (DWA) instead of the conventional accelerator may provide a significant cost saving and reduction of the facility size. In this article, we investigate using a collinear dielectric wakefield accelerator to provide a high repetition rate, high current, high energy beam to drive a future FEL x-ray light source. As an initial case study, a {approx}100 MV/m loaded gradient, 850 GHz quartz dielectric based 2-stage, wakefield accelerator is proposed to generate a main electron beam of 8 GeV, 50 pC/bunch, {approx}1.2 kA of peak current, 10 x 10 kHz (10 beamlines) in just 100 meters with the fill factor and beam loading considered. This scheme provides 10 parallel main beams with one 100 kHz drive beam. A drive-to-main beam efficiency {approx}38.5% can be achieved with an advanced transformer ratio enhancement technique. rf power dissipation in the structure is only 5 W/cm{sup 2} in the high repetition rate, high gradient operation mode, which is in the range of advanced water cooling capability. Details of study presented in the article include the overall layout, the transform ratio enhancement scheme used to increase the drive to main beam efficiency, main wakefield linac design, cooling of the structure, etc.

Temperature-dependent dielectric function of germanium in the UV–vis spectral range: A first-principles study

International Nuclear Information System (INIS)

Yang, J.Y.; Liu, L.H.; Tan, J.Y.

2014-01-01

The study of temperature dependence of thermophysical parameter dielectric function is key to understanding thermal radiative transfer in high-temperature environments. Limited by self-radiation and thermal oxidation, however, it is difficult to directly measure the high-temperature dielectric function of solids with present experimental technologies. In this work, we implement two first-principles methods, the ab initio molecular dynamics (AIMD) and density functional perturbation theory (DFPT), to study the temperature dependence of dielectric function of germanium (Ge) in the UV–vis spectral range in order to provide data of high-temperature dielectric function for radiative transfer study in high-temperature environments. Both the two methods successfully predict the temperature dependence of dielectric function of Ge. Moreover, the good agreement between the calculated results of the AIMD approach and experimental data at 825 K enables us to predict the high-temperature dielectric function of Ge with the AIMD method in the UV–vis spectral range. - Highlights: • The temperature dependence of dielectric function of germanium (Ge) is investigated with two first-principles methods. • The temperature effect on dielectric function of Ge is discussed. • The high-temperature dielectric function of Ge is predicted

Layered Cu-based electrode for high-dielectric constant oxide thin film-based devices

International Nuclear Information System (INIS)

Fan, W.; Saha, S.; Carlisle, J.A.; Auciello, O.; Chang, R.P.H.; Ramesh, R.

2003-01-01

Ti-Al/Cu/Ta multilayered electrodes were fabricated on SiO 2 /Si substrates by ion beam sputtering deposition, to overcome the problems of Cu diffusion and oxidation encountered during the high dielectric constant (κ) materials integration. The Cu and Ta layers remained intact through the annealing in oxygen environment up to 600 deg. C. The thin oxide layer, formed on the Ti-Al surface, effectively prevented the oxygen penetration toward underneath layers. Complex oxide (Ba x Sr 1-x )TiO 3 (BST) thin films were grown on the layered Ti-Al/Cu/Ta electrodes using rf magnetron sputtering. The deposited BST films exhibited relatively high permittivity (150), low dielectric loss (0.007) at zero bias, and low leakage current -8 A/cm 2 at 100 kV/cm

Electrical modulus and dielectric behavior of Cr{sup 3+} substituted Mg–Zn nanoferrites

Energy Technology Data Exchange (ETDEWEB)

Mansour, S.F.; Abdo, M.A.

2017-04-15

The dielectric parameters and ac electrical conductivity of Mg{sub 0.8}Zn{sub 0.2}Cr{sub x}Fe{sub 2−x}O{sub 4}; (0≤x≤0.025) nanoferrites synthesized citrate–nitrate auto-combustion method were studied using the complex impedance technique in the frequency and temperature ranges 4 Hz–5 MHz and 303–873 K respectively. Hopping of charge carriers plus interfacial polarization could interpret the behaviors of dielectric constant (ε′), dielectric loss tangent (tanδ) and ac electrical conductivity (σ{sub ac}) with frequency, temperatures and composition. The up-normal behavior observed in tanδ trend with temperatures confirms the presence of relaxation loss (dipoles losses). Correlated barrier hopping (CBH) of electron is the conduction mechanism of the investigated nanoferrites. Cole-Cole plots at different temperatures emphasize the main role of grain and grain boundaries in the properties of the investigated nanoferrites. Cr{sup 3+} substitution can control the dielectric parameters and ac electrical conductivity of Mg-Zn nanoferrites making it candidates for versatile applications. - Highlights: • The composition dependence of ε′, tanδ, and σ{sub ac} showed the same trend. • CBH model is the conduction mechanism of the investigated nanoferrite. • Cole-Cole plots confirmed the role of grain and grain boundaries in our nanoferrites.

Investigating the performance and properties of dielectric elastomer actuators as a potential means to actuate origami structures

International Nuclear Information System (INIS)

Ahmed, S; Ounaies, Z; Frecker, M

2014-01-01

Origami engineering aims to combine origami principles with advanced materials to yield active origami shapes, which fold and unfold in response to external stimuli. This paper explores the potential and limitations of dielectric elastomers (DEs) as the enabling material in active origami engineering. DEs are compliant materials in which the coupled electro-mechanical actuation takes advantage of their low modulus and high breakdown strength. Until recently, prestraining of relatively thick DE materials was necessary in order to achieve the high electric fields needed to trigger electrostatic actuation without inducing a dielectric breakdown. Although prestrain improves the breakdown strength of the DE films and reduces the voltage required for actuation, the need for a solid frame to retain the prestrain state is a limitation for the practical implementation of DEs, especially for active origami structures. However, the recent availability of thinner DE materials (50 μm, 130 μm, 260 μm) has made DEs a likely medium for active origami. In this work, the folding and unfolding of DE multilayered structures, along with the realization of origami-inspired 3D shapes, are explored. In addition, an exhaustive study on the fundamentals of DE actuation is done by directly investigating the thickness actuation mechanism and comparing their performance using different electrode types. Finally, changes in dielectric permittivity as a function of strain, electrode type and applied electric field are assessed and analyzed. These fundamental studies are key to obtaining more dramatic folding and to realizing active origami structures using DE materials. (paper)

Demonstration of hetero-gate-dielectric tunneling field-effect transistors (HG TFETs).

Science.gov (United States)

Choi, Woo Young; Lee, Hyun Kook

2016-01-01

The steady scaling-down of semiconductor device for improving performance has been the most important issue among researchers. Recently, as low-power consumption becomes one of the most important requirements, there have been many researches about novel devices for low-power consumption. Though scaling supply voltage is the most effective way for low-power consumption, performance degradation is occurred for metal-oxide-semiconductor field-effect transistors (MOSFETs) when supply voltage is reduced because subthreshold swing (SS) of MOSFETs cannot be lower than 60 mV/dec. Thus, in this thesis, hetero-gate-dielectric tunneling field-effect transistors (HG TFETs) are investigated as one of the most promising alternatives to MOSFETs. By replacing source-side gate insulator with a high- k material, HG TFETs show higher on-current, suppressed ambipolar current and lower SS than conventional TFETs. Device design optimization through simulation was performed and fabrication based on simulation demonstrated that performance of HG TFETs were better than that of conventional TFETs. Especially, enlargement of gate insulator thickness while etching gate insulator at the source side was improved by introducing HF vapor etch process. In addition, the proposed HG TFETs showed higher performance than our previous results by changing structure of sidewall spacer by high- k etching process.

Conductivity of ion dielectrics during the mean flux-density electron- and X-ray pulse radiation

International Nuclear Information System (INIS)

Vajsburd, D.I.; Mesyats, G.A.; Naminov, V.L.; Tavanov, Eh.G.

1982-01-01

Conductivity of ion dielectrics under electron and X-ray pulse radiation is investigated. Investigations have been conducted in the range of average beam densities in which extinction of low-energy conductivity takes place. Thin plates of alkali-halogen crystals have been used as samples. Small-dimensional accelerator with controlled beam parameters: 1-20 ns, 0.1-2000 A/cm 2 , 0.3-0.5 MeV has been used for radiation. Temperature dependence of conductivity current pulse is determined. Time resolution of 10 - 10 s is achieved. In the 70-300 K range it practically coincides with radiation pulse. An essential inertial constituent is observed below 300 K. It is shown that at average beam densities a comparable contribution into fast conductivity is made by intracentre conductivity independent of temperature and high-temperature conductivity which decreases with temperature with activation energy equal to the energy of short-wave background. That is why amplitude of fast constituent decreases with temperature slower than high-energy conductivity

Experimental investigation on large-area dielectric barrier discharge in atmospheric nitrogen and air assisted by the ultraviolet lamp.

Science.gov (United States)

Zhang, Yan; Gu, Biao; Wang, Wenchun; Wang, Dezhen; Peng, Xuwen

2009-04-01

In this paper, ultraviolet radiation produced by the ultraviolet lamp is employed to supply pre-ionization for the dielectric barrier discharge in N(2) or air at atmospheric pressure. The effect of the ultraviolet pre-ionization on improving the uniformity of the dielectric barrier discharge is investigated experimentally. The atmospheric pressure glow discharge of the large area (270 mm x 120 mm) is obtained successfully via the ultraviolet pre-ionization in atmospheric DBD in N(2) when the gas gap decrease to 3mm. Based on the emission spectra, the mechanism which ultraviolet pre-ionization improves the uniformity of the dielectric barrier discharge is discussed.

Charge transfer to a dielectric target by guided ionization waves using electric field measurements

NARCIS (Netherlands)

Slikboer, E.T.; Garcia-Caurel, E.; Guaitella, O.; Sobota, A.

2017-01-01

A kHz-operated atmospheric pressure plasma jet is investigated by measuring charge transferred to a dielectric electro-optic surface (BSO crystal) allowing for the measurement of electric field by exploiting the Pockels effect. The electric field values, distribution of the surface discharge and

Ozone generation in a kHz-pulsed He-O2 capillary dielectric barrier discharge operated in ambient air

Science.gov (United States)

Sands, Brian L.; Ganguly, Biswa N.

2013-12-01

The generation of reactive oxygen species using nonequilibrium atmospheric pressure plasma jet devices has been a subject of recent interest due to their ability to generate localized concentrations from a compact source. To date, such studies with plasma jet devices have primarily utilized radio-frequency excitation. In this work, we characterize ozone generation in a kHz-pulsed capillary dielectric barrier discharge configuration comprised of an active discharge plasma jet operating in ambient air that is externally grounded. The plasma jet flow gas was composed of helium with an admixture of up to 5% oxygen. A unipolar voltage pulse train with a 20 ns pulse risetime was used to drive the discharge at repetition rates between 2-25 kHz. Using UVLED absorption spectroscopy centered at 255 nm near the Hartley-band absorption peak, ozone was detected over 1 cm from the capillary axis. We observed roughly linear scaling of ozone production with increasing pulse repetition rate up to a "turnover frequency," beyond which ozone production steadily dropped and discharge current and 777 nm O(5P→5S°) emission sharply increased. The turnover in ozone production occurred at higher pulse frequencies with increasing flow rate and decreasing applied voltage with a common energy density of 55 mJ/cm3 supplied to the discharge. The limiting energy density and peak ozone production both increased with increasing O2 admixture. The power dissipated in the discharge was obtained from circuit current and voltage measurements using a modified parallel plate dielectric barrier discharge circuit model and the volume-averaged ozone concentration was derived from a 2D ozone absorption measurement. From these measurements, the volume-averaged efficiency of ozone production was calculated to be 23 g/kWh at conditions for peak ozone production of 41 mg/h at 11 kV applied voltage, 3% O2, 2 l/min flow rate, and 13 kHz pulse repetition rate, with 1.79 W dissipated in the discharge.

Dielectric response of capacitor structures based on PZT annealed at different temperatures

Energy Technology Data Exchange (ETDEWEB)

Kamenshchikov, Mikhail V., E-mail: Mikhailkamenshchikov@yandex.ru [Tver State University, 170002, Tver (Russian Federation); Solnyshkin, Alexander V. [Tver State University, 170002, Tver (Russian Federation); Pronin, Igor P. [Ioffe Institute, 194021, St. Petersburg (Russian Federation)

2016-12-09

Highlights: • Correlation of the microstructure of PZT films and dielectric response was found. • Difference of dielectric responses under low and high bias is caused by domains. • Internal fields is discussed on the basis of the space charges. • Dependences of PZT films characteristics on synthesis temperature are extremal. - Abstract: Dielectric response of thin-film capacitor structures of Pt/PZT/Pt deposited by the RF magnetron sputtering method and annealed at temperatures of 540–570 °C was investigated. It was found that dielectric properties of these structures depend on the synthesis temperature. Stability of a polarized state is considered on the basis of the analysis of hysteresis loops and capacitance–voltage (C–V) characteristics. The contribution of the domain mechanism in the dielectric response of the capacitor structure comprising a ferroelectric is discussed. Extreme dependences of electrophysical characteristics of PZT films on their synthesis temperature were observed. Correlation of dielectric properties with microstructure of these films is found out.

Structural Characteristics & Dielectric Properties of Tantalum Oxide Doped Barium Titanate Based Materials

Directory of Open Access Journals (Sweden)

Rubayyat Mahbub

2012-11-01

Full Text Available In this research, the causal relationship between the dielectric properties and the structural characteristics of 0.5 & 1.0 mol% Ta2O5 doped BaTiO3 based ceramic materials were investigated under different sintering conditions. Dielectric properties and microstructure of BaTio3 ceramics were significantly influenced by the addition of a small amount of Ta2O5. Dielectric properties were investigated by measuring the dielectric constant (k as a function of temperature and frequency. Percent theoretical density (%TD above 90% was achieved for 0.5 and 1.0 mol% Ta2O5 doped BaTiO3. It was observed that the grain size decreased markedly above a doping concentration of 0·5 mol% Ta2O5. Although fine grain size down to 200-300nm was attained, grain sizes in the range of 1-1.8µm showed the most alluring properties. The fine-grain quality and high density of the Ta2O5 doped BaTiO3 ceramic resulted in tenfold increase of dielectric constant. Stable value of dielectric constant as high as 13000-14000 was found in the temperature range of  55 to 80°C, for 1.0 mol% Ta2O5 doped samples with corresponding shift of Curie point to ~82°C. Experiments divulged that incorporation of a proper content of Ta2O5 in BaTiO3 could control the grain growth, shift the Curie temperature and hence significantly improve the dielectric property of the BaTiO3 ceramics.

Spectroscopy and Biosensing with Optically Resonant Dielectric Nanostructures

OpenAIRE

Krasnok, Alex; Caldarola, Martin; Bonod, Nicolas; Alú, Andrea

2017-01-01

Resonant dielectric nanoparticles (RDNs) made of materials with large positive dielectric permittivity, such as Si, GaP, GaAs, have become a powerful platform for modern light science, enabling various fascinating applications in nanophotonics and quantum optics. In addition to light localization at the nanoscale, dielectric nanostructures provide electric and magnetic resonant responses throughout the visible and infrared spectrum, low dissipative losses and optical heating, low doping effec...

Investigation of optical pump on dielectric tunability in PZT/PT thin film by THz spectroscopy.

Science.gov (United States)

Ji, Jie; Luo, Chunya; Rao, Yunkun; Ling, Furi; Yao, Jianquan

2016-07-11

The dielectric spectra of single-layer PbTiO3 (PT), single-layer PbZrxTi1-xO3 (PZT) and multilayer PZT/PT thin films under an external optical field were investigated at room temperature by time-domain terahertz (THz) spectroscopy. Results showed that the real part of permittivity increased upon application of an external optical field, which could be interpreted as hardening of the soft mode and increasing of the damping coefficient and oscillator strength. Furthermore, the central mode was observed in the three films. Among the dielectric property of the three thin films studied, the tunability of the PZT/PT superlattice was the largest.

Enhancement of dielectric permittivity by incorporating PDMS-PEG multiblock copolymers in silicone elastomers

DEFF Research Database (Denmark)

A Razak, Aliff Hisyam; Szabo, Peter; Skov, Anne Ladegaard

2015-01-01

A silicone elastomer from PDMS-PEG multiblock copolymer has been prepared by use of silylation reactions for both copolymer preparation and crosslinking. The dielectric and mechanical properties of the silicone elastomers were carefully investigated, as well as the morphology of the elastomers wa...... to a significantly increased dielectric permittivity. The conductivity also remained low due to the resulting discontinuity in PEG within the silicone matrix....

Low dielectric constant and moisture-resistant polyimide aerogels containing trifluoromethyl pendent groups

Science.gov (United States)

Wu, Tingting; Dong, Jie; Gan, Feng; Fang, Yuting; Zhao, Xin; Zhang, Qinghua

2018-05-01

Conventional polyimide aerogels made from biphenyl-3,3‧,4,4‧-tetracarboxylic dianydride (BPDA) and 4,4‧-oxidianiline (ODA) exhibit poor resistance to moisture and mechanical properties. In this work, a versatile diamine, 2,2‧-bis-(trifluoromethyl)-4,4‧-diaminobiphenyl (TFMB), is introduced to BPDA/ODA backbone to modify the comprehensive performance of this aerogel. Among all formulations, the resulted polyimide aerogels exhibit the lowest shrinkage and density as well as highest porosity, at the ODA/TFMB molar ratio of 5/5. Dielectric constants and loss tangents of the aerogels fall in the range of 1.29-1.33 and 0.001-0.004, respectively, and more TFMB fractions results in a slightly decrease of dielectric constant and loss tangent. In addition, moisture-resistance of the aerogels are dramatically enhanced as the water absorption decreasing from 415% for BPDA/ODA to 13% for the polyimide aerogel at the ODA/TFMB molar ratio of 7/3, and even to 4% for the homo-BPDA/TFMB polyimide aerogel, showing a superhydrophobic characteristic, which is a great advantage for polyimide aerogels used as low dielectric materials. Meanwhile, all of formulations of aerogels exhibit high absorption capacities for oils and common organic solvents, indicating that these fluorinated polyimide aerogels are good candidates for the separation of oils/organic solvents and water. Mechanical properties and thermal stability of the polyimide aerogels are also raised to varying degrees due to the rigid-rod biphenyl structure introduced by TFMB.

The influence of neutron-irradiation at low temperatures on the dielectric parameters of 3C-SiC

Energy Technology Data Exchange (ETDEWEB)

Engelbrecht, J.A.A., E-mail: Japie.Engelbrecht@nmmu.ac.za [Physics Department, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Deyzel, G.; Minnaar, E.G.; Goosen, W.E. [Physics Department, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Rooyen, I.J. van [Fuel Performance and Design Department, Idaho National Laboratory, P.O. Box 1625, Idaho Falls, ID 83415-6188 (United States)

2014-04-15

3C-SiC wafers were irradiated with neutrons of various fluences and at low (200–400 °C) irradiation temperatures. Fourier transform infrared (FTIR) reflectance spectra were obtained for the samples, and the spectra used to extract the dielectric parameters for each specimen, using statistical curve-fitting procedures. Analysis of all data revealed trends in reflectance peak heights as well as in the dielectric parameters. The surface roughness of the irradiated samples was measured by atomic force spectroscopy (AFM) and certain trends could be ascribed to surface roughness.

The influence of neutron-irradiation at low temperatures on the dielectric parameters of 3C-SiC

International Nuclear Information System (INIS)

Engelbrecht, J.A.A.; Deyzel, G.; Minnaar, E.G.; Goosen, W.E.; Rooyen, I.J. van

2014-01-01

3C-SiC wafers were irradiated with neutrons of various fluences and at low (200–400 °C) irradiation temperatures. Fourier transform infrared (FTIR) reflectance spectra were obtained for the samples, and the spectra used to extract the dielectric parameters for each specimen, using statistical curve-fitting procedures. Analysis of all data revealed trends in reflectance peak heights as well as in the dielectric parameters. The surface roughness of the irradiated samples was measured by atomic force spectroscopy (AFM) and certain trends could be ascribed to surface roughness.

Properties and applications of HTS-shielded dielectric resonators: A state-of-the-art report

International Nuclear Information System (INIS)

Klein, N.; Scholen, A.; Tellmann, N.; Zuccaro, C.; Urban, K.W.

1996-01-01

High temperature superconductor (HTS) shielded dielectric resonators (DRs) have demonstrated to provide quality factors Q between 5 x 10 5 and several 10 6 at frequencies up to 20 GHz and levels of dissipated rf power in the range of Watts. As dielectric materials, high purity single crystals of sapphire, LaAlO 3 , and rutile exhibit sufficiently low microwave losses. There are two main areas of application which are considered to benefit from HTS-shielded DRs, namely low-phase-noise oscillators for radar systems and digital communication, and high-power filters for satellite communication. Projections for phase noise are -145 dBc/Hz at 1 kHz offset from the carrier frequency, a value of -110 dBc/Hz at 1 kHz was measured recently for an oscillator with a carrier frequency of 5.6 GHz. Modeling of filters based on resonators with Qs in the 10 6 range indicates their ability to reduce the rf power dissipation apparent in the output multiplexers of communication satellite payloads. Presently, schemes for resonator coupling and tuning while maintaining high Qs are under development

Investigation of dielectric properties of different cake formulations during microwave and infrared-microwave combination baking.

Science.gov (United States)

Sakiyan, Ozge; Sumnu, Gulum; Sahin, Serpil; Meda, Venkatesh

2007-05-01

Dielectric properties can be used to understand the behavior of food materials during microwave processing. Dielectric properties influence the level of interaction between food and high frequency electromagnetic energy. Dielectric properties are, therefore, important in the design of foods intended for microwave preparation. In this study, it was aimed to determine the variation of dielectric properties of different cake formulations during baking in microwave and infrared-microwave combination oven. In addition, the effects of formulation and temperature on dielectric properties of cake batter were examined. Dielectric constant and loss factor of cake samples were shown to be dependent on formulation, baking time, and temperature. The increase in baking time and temperature decreased dielectric constant and loss factor of all formulations. Fat content was shown to increase dielectric constant and loss factor of cakes.

Improved dielectric and ferroelectric properties of Mn doped barium zirconium titanate (BZT) ceramics for energy storage applications

Science.gov (United States)

Sangwan, Kanta Maan; Ahlawat, Neetu; Kundu, R. S.; Rani, Suman; Rani, Sunita; Ahlawat, Navneet; Murugavel, Sevi

2018-06-01

Lead free Mn doped barium zirconium titanate ceramic of composition BaZr0.045 (MnxTi1-x)0.955O3 (x = 0.00, 0.01, 0.02) were prepared by solid state reaction method. Tetragonal perovskite structure was confirmed by Rietveld refinement of X-ray diffraction pattern. Analysis of Scanning electron microscope (SEM) micrographs revealed that addition of Mn up to a certain limit accelerates grain growth of BZT ceramic. Static dielectric constant was successfully extended up to high frequencies with an appreciable decrease in dielectric loss about 70% for Mn doped BZT ceramics. The experimental data fitted with Curie Weiss Law and Power Law confirmed first order transition and diffusive behavior of the investigated system. The shifting of Curie temperature (Tc) from 387 K to 402 K indicated tendency for sustained ferroelectricity in doped BZMT ceramics. High value of percentage temperature coefficient of capacitance TCC >10% near Tc was observed for all the compositions and increases with Mn content in pure BZT. At room temperature, BZT modified ceramic corresponding to x = 0.01 composition shows better values of remnant polarization (Pr = 5.718 μC/cm2), saturation polarization (Ps = 14.410 μC/cm2), low coercive field (Ec = 0.612 kV/cm), and highest value of Pr/Ps = 0.396.

Full Characterization at Low Temperature of Piezoelectric Actuators Used for SRF Cavities Active Tuning

CERN Document Server

Fouaidy, Mohammed; Chatelet, Frederic; Hammoudi, Nourredine; Martinet, Guillaume; Olivier, Aurelia; Saugnac, Herve

2005-01-01

In the frame of the CARE project activities, supported by EU, IPN Orsay participate to the development of a fast cold tuning system for SRF cavities operating at a temperature T=2 K. The study is aimed at full characterization of piezoelectric actuators at low temperature. A new experimental facility was developed for testing various prototypes piezoelectric actuators and successfully operated for T in the range 1.8 K-300 K. Different parameters were investigated as function of T: piezoelectric actuator displacement vs. applied voltage V, capacitance vs. T, dielectric and thermal properties vs. T and finally heating DT due to dielectric losses vs. modulating voltage Vmod and frequency. We observed a decrease of the Full Range Displacement (FRD or DX) of the actuator from ~40μm @ 300K down to 1.8μm-3μm @ 1.8K, depending on both material and fabrication process of the piezostacks. Besides, both material and fabrication process have a strong influence on the shape of the characteris...

Lead free dielectric ceramic with stable relative permittivity of 0.90(Na0.50Bi0.50Ti)O3-0.10AgNbO3

Science.gov (United States)

Verma, Anita; Yadav, Arun Kumar; Kumar, Sunil; Sen, Somaditya

2018-04-01

Structural, dielectric and ferroelectric properties in perovskite 0.90(Na0.50Bi0.50Ti)03-0.10AgNb03 polycrystalline powders prepared by sol-gel method are discussed. Diffuse phase transition and new type of dielectric anomaly was observed with highly steady capacitive properties in the 135-450 °C temperature range. This compound shows remarkable dielectric with dielectric constant ɛr 1000 with a variation of ± 7% and tan δ = 0.004 0.25 in 135- 450 °C temperature. In addition, it also showed excellent ferroelectric properties with saturation polarization Ps = 13.5 μC/cm2, remnant polarization of Pr = 7.6 μC/cm2 and a low coercive field Ec = 36 kV/cm at room temperature. Stable dielectric constant (ɛr) and low dielectric loss (tan δ) in a wide temperature range observed for the titled composition makes it an interesting candidate for potential use in fast growing "high-temperature electronics" industry applications.

Atmospheric pressure dielectric barrier discharges for sterilization and surface treatment

Energy Technology Data Exchange (ETDEWEB)

Chin, O. H.; Lai, C. K.; Choo, C. Y.; Wong, C. S.; Nor, R. M. [Plasma Technology Research Centre, Physics Department, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia); Thong, K. L. [Microbiology Division, Institute of Biological Sciences, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia)

2015-04-24

Atmospheric pressure non-thermal dielectric barrier discharges can be generated in different configurations for different applications. For sterilization, a parallel-plate electrode configuration with glass dielectric that discharges in air was used. Gram-negative bacteria (Escherichia coli and Salmonella enteritidis) and Gram-positive bacteria (Bacillus cereus) were successfully inactivated using sinusoidal high voltage of ∼15 kVp-p at 8.5 kHz. In the surface treatment, a hemisphere and disc electrode arrangement that allowed a plasma jet to be extruded under controlled nitrogen gas flow (at 9.2 kHz, 20 kVp-p) was applied to enhance the wettability of PET (Mylar) film.

Electrical and dielectric investigation of intercalated polypyrrole montmorillonite nanocomposite prepared by spontaneous polymerization of pyrrole into Fe(III)-montmorillonite

Energy Technology Data Exchange (ETDEWEB)

Zidi, Rabii, E-mail: rabiizidi@gmail.com [Physical Chemistry Laboratory for Mineral Materials and their Applications, National Center for Research in Materials Sciences (CNRSM), B.P.73, 8020 Soliman (Tunisia); Bekri-Abbes, Imene; Sdiri, Nasr [Physical Chemistry Laboratory for Mineral Materials and their Applications, National Center for Research in Materials Sciences (CNRSM), B.P.73, 8020 Soliman (Tunisia); Vimalanandan, Ashokanand; Rohwerder, Michael [Max-Planck-Institut für Eisenforschung GmbH, Düsseldorf (Germany); Srasra, Ezzeddine [Physical Chemistry Laboratory for Mineral Materials and their Applications, National Center for Research in Materials Sciences (CNRSM), B.P.73, 8020 Soliman (Tunisia)

2016-10-15

Highlights: • We have prepared and characterized a Fe-MMT/PPy nanocomposites. • Investigate electrical conductivity and dielectric properties of the nanocomposite. • Investigate the temperature and frequency dependencies of alternating current conductivity of nanocomposites. - Abstract: Pyrrole was introduced into Fe(III)-exchanged montmorillonite to spontaneously polymerize within the interlayer resulting in the formation of intercalated polypyrrole-montmorillonite nanocomposite. The molar proportion of pyrrole to interlayer Fe{sup 3+} (R) has been varied from 0.5 to 5. The nanocomposite has been characterized by X-ray diffraction, Scanning Electronic Microscope, FTIR spectroscopy and impedance spectroscopy. It has been shown that intercalated polypyrrole montmorillonite nanocomposite was obtained. The results showed that the dc conductivity and dielectric properties of polypyrrole depend on R. The alternating current (ac) conductivity of the polymer obeys the power law, i.e., σ{sub ac}(ω) = Aω{sup s}. The alternating conductivity of nanocomposite was controlled by the correlated barrier hopping model. The activation energy for alternating current mechanism decreases with increasing frequency which confirms the hopping conduction to the dominant mechanism as compared with the dc activation energy. The dielectric relaxation mechanism was explained on the basis of complex dielectric modulus.

Micro-Raman scattering and dielectric investigations of phase transitions behavior in the PbHf0.7Sn0.3O3 single crystal

Science.gov (United States)

Jankowska-Sumara, Irena; Ko, Jae-Hyeon; Podgórna, Maria; Oh, Soo Han; Majchrowski, Andrzej

2017-09-01

Raman light scattering was used to detect the sequence of transitions in a PbHf1-xSnxO3 (PHS) single crystal with x = 0.30 in a temperature range of 77-873 K. Changes of Raman spectra were observed in the vicinity of structural phase transitions: between the antiferroelectric (AFE1)-antiferroelectric (AFE2)—intermediate—paraelectric phases. Light scattering and dielectric investigations were used to find out the nature and sequence of the phase transition, as well as the large dielectric permittivity values measured at the phase transition, by searching for the soft-phonon-mode behavior. The experimentally recorded spectra were analyzed in terms of the damped-harmonic oscillator model for the phonon bands. It is demonstrated that the structural phase transformations in PHS can be considered as the result of softening of many modes, not only the ferroelectric one. It was also proved that locally broken symmetry effects are present at temperatures far above the Curie temperature and are connected with the softening of two optic modes of different nature.

High-Performance Flexible Single-Crystalline Silicon Nanomembrane Thin-Film Transistors with High- k Nb2O5-Bi2O3-MgO Ceramics as Gate Dielectric on a Plastic Substrate.

Science.gov (United States)

Qin, Guoxuan; Zhang, Yibo; Lan, Kuibo; Li, Lingxia; Ma, Jianguo; Yu, Shihui

2018-04-18

A novel method of fabricating flexible thin-film transistor based on single-crystalline Si nanomembrane (SiNM) with high- k Nb 2 O 5 -Bi 2 O 3 -MgO (BMN) ceramic gate dielectric on a plastic substrate is demonstrated in this paper. SiNMs are successfully transferred to a flexible polyethylene terephthalate substrate, which has been plated with indium-tin-oxide (ITO) conductive layer and high- k BMN ceramic gate dielectric layer by room-temperature magnetron sputtering. The BMN ceramic gate dielectric layer demonstrates as high as ∼109 dielectric constant, with only dozens of pA current leakage. The Si-BMN-ITO heterostructure has only ∼nA leakage current at the applied voltage of 3 V. The transistor is shown to work at a high current on/off ratio of above 10 4 , and the threshold voltage is ∼1.3 V, with over 200 cm 2 /(V s) effective channel electron mobility. Bending tests have been conducted and show that the flexible transistors have good tolerance on mechanical bending strains. These characteristics indicate that the flexible single-crystalline SiNM transistors with BMN ceramics as gate dielectric have great potential for applications in high-performance integrated flexible circuit.

The influence of carbon doping on the performance of Gd2O3 as high-k gate dielectric

International Nuclear Information System (INIS)

Shekhter, P.; Yehezkel, S.; Shriki, A.; Eizenberg, M.; Chaudhuri, A. R.; Osten, H. J.; Laha, A.

2014-01-01

One of the approaches for overcoming the issue of leakage current in modern metal-oxide-semiconductor devices is utilizing the high dielectric constants of lanthanide based oxides. We investigated the effect of carbon doping directly into Gd 2 O 3 layers on the performance of such devices. It was found that the amount of carbon introduced into the dielectric is above the solubility limit; carbon atoms enrich the oxide-semiconductor interface and cause a significant shift in the flat band voltage of the stack. Although the carbon atoms slightly degrade this interface, this method has a potential for tuning the flat band voltage of such structures

Homogeneous/Inhomogeneous-Structured Dielectrics and their Energy-Storage Performances.

Science.gov (United States)

Yao, Zhonghua; Song, Zhe; Hao, Hua; Yu, Zhiyong; Cao, Minghe; Zhang, Shujun; Lanagan, Michael T; Liu, Hanxing

2017-05-01

The demand for dielectric capacitors with higher energy-storage capability is increasing for power electronic devices due to the rapid development of electronic industry. Existing dielectrics for high-energy-storage capacitors and potential new capacitor technologies are reviewed toward realizing these goals. Various dielectric materials with desirable permittivity and dielectric breakdown strength potentially meeting the device requirements are discussed. However, some significant limitations for current dielectrics can be ascribed to their low permittivity, low breakdown strength, and high hysteresis loss, which will decrease their energy density and efficiency. Thus, the implementation of dielectric materials for high-energy-density applications requires the comprehensive understanding of both the materials design and processing. The optimization of high-energy-storage dielectrics will have far-reaching impacts on the sustainable energy and will be an important research topic in the near future. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Dielectric relaxation studies of dilute solutions of amides

Energy Technology Data Exchange (ETDEWEB)

Malathi, M.; Sabesan, R.; Krishnan, S

2003-11-15

The dielectric constants and dielectric losses of formamide, acetamide, N-methyl acetamide, acetanilide and N,N-dimethyl acetamide in dilute solutions of 1,4-dioxan/benzene have been measured at 308 K using 9.37 GHz, dielectric relaxation set up. The relaxation time for the over all rotation {tau}{sub (1)} and that for the group rotation {tau}{sub (2)} of (the molecules were determined using Higasi's method. The activation energies for the processes of dielectric relaxation and viscous flow were determined by using Eyring's rate theory. From relaxation time behaviour of amides in non-polar solvent, solute-solvent and solute-solute type of molecular association is proposed.

Simultaneous achievement of high dielectric constant and low temperature dependence of capacitance in (111-oriented BaTiO3-Bi(Mg0.5Ti0.5O3-BiFeO3 solid solution thin films

Directory of Open Access Journals (Sweden)

Junichi Kimura

2016-01-01

Full Text Available The temperature dependence of the capacitance of (111c-oriented (0.90–xBaTiO3-0.10Bi(Mg0.5Ti0.5O3-xBiFeO3 solid solution films is investigated. These films are prepared on (111cSrRuO3/(111Pt/TiO2/SiO2/(100Si substrates by the chemical solution deposition technique. All the films have perovskite structures and the crystal symmetry at room temperature varies with increasing x ratio, from pseudocubic when x = 0–0.30 to rhombohedral when x = 0.50–0.90. The pseudocubic phase shows a high relative dielectric constant (εr (ranging between 400 and 560 at room temperature and an operating frequency of 100 kHz and a low temperature dependence of capacitance up to 400°C, while maintaining a dielectric loss (tan δ value of less than 0.2 at 100 kHz. In contrast, εr for the rhombohedral phase increases monotonically with increasing temperature up to 250°C, and increasingly high tan δ values are recorded at higher temperatures. These results indicate that pseudocubic (0.90–xBaTiO3-0.10Bi(Mg0.5Ti0.5O3-xBiFeO3 solid solution films with (111 orientation are suitable candidates for high-temperature capacitor applications.

High-efficiency removal of NOx using dielectric barrier discharge nonthermal plasma with water as an outer electrode

Science.gov (United States)

Dan, ZHAO; Feng, YU; Amin, ZHOU; Cunhua, MA; Bin, DAI

2018-01-01

With the rapid increase in the number of cars and the development of industry, nitrogen oxide (NOx) emissions have become a serious and pressing problem. This work reports on the development of a water-cooled dielectric barrier discharge reactor for gaseous NOx removal at low temperature. The characteristics of the reactor are evaluated with and without packing of the reaction tube with 2 mm diameter dielectric beads composed of glass, ZnO, MnO2, ZrO2, or Fe2O3. It is found that the use of a water-cooled tube reduces the temperature, which stabilizes the reaction, and provides a much greater NO conversion efficiency (28.8%) than that obtained using quartz tube (14.1%) at a frequency of 8 kHz with an input voltage of 6.8 kV. Furthermore, under equivalent conditions, packing the reactor tube with glass beads greatly increases the NO conversion efficiency to 95.85%. This is because the dielectric beads alter the distribution of the electric field due to the influence of polarization at the glass bead surfaces, which ultimately enhances the plasma discharge intensity. The presence of the dielectric beads increases the gas residence time within the reactor. Experimental verification and a theoretical basis are provided for the industrial application of the proposed plasma NO removal process employing dielectric bead packing.

High dielectric permittivity and improved mechanical and thermal properties of poly(vinylidene fluoride) composites with low carbon nanotube content: effect of composite processing on phase behavior and dielectric properties.

Science.gov (United States)

Kumar, G Sudheer; Vishnupriya, D; Chary, K Suresh; Patro, T Umasankar

2016-09-23

The composite processing technique and nanofiller concentration and its functionalization significantly alter the properties of polymer nanocomposites. To realize this, multi-walled carbon nanotubes (CNT) were dispersed in a poly(vinylidene fluoride) (PVDF) matrix at carefully selected CNT concentrations by two illustrious methods, such as solution-cast and melt-mixing. Notwithstanding the processing method, CNTs induced predominantly the γ-phase in PVDF, instead of the commonly obtained β-phase upon nanofiller incorporation, and imparted significant improvements in dielectric properties. Acid-treatment of CNT improved its dispersion and interfacial adhesion significantly with PVDF, and induced a higher γ-phase content and better dielectric properties in PVDF as compared to pristine CNT. Further, the γ-phase content was found to be higher in solution-cast composites than that in melt-mixed counterparts, most likely due to solvent-induced crystallization in a controlled environment and slow solvent evaporation in the former case. However, interestingly, the melt-mixed composites showed a significantly higher dielectric constant at the onset of the CNT networked-structure as compared to the solution-cast composites. This suggests the possible role of CNT breakage during melt-mixing, which might lead to higher space-charge polarization at the polymer-CNT interface, and in turn an increased number of pseudo-microcapacitors in these composites than the solution-cast counterparts. Notably, PVDF with 0.13 vol% (volume fraction, f c  = 0.0013) of acid-treated CNTs, prepared by melt-mixing, displayed the relative permittivity of ∼217 and capacitance of ∼5430 pF, loss tangent of ∼0.4 at 1 kHz and an unprecedented figure of merit of ∼10(5). We suggest a simple hypothesis for the γ-phase formation and evolution of the high dielectric constant in these composites. Further, the high-dielectric composite film showed marked improvements in mechanical and thermal

In-waveguide measurements of MMW dielectric properties of ceramic materials for the US fusion reactor materials research program

International Nuclear Information System (INIS)

Kennedy, J.C. III; Farnum, E.F.; Clinard, F.W. Jr.

1992-01-01

The objective is to obtain accurate measurements of dielectric properties of candidate ceramic insulating materials for fusion reactors. As part of an IEA collaboration, a set of round-robin materials was purchased for comparing dielectric measurements at laboratories in the United Kingdom, Spain, Germany, US, and Japan. P. Pells at Aldermasten, UK, purchased MACOR 9658, a glass-mica composite, and Roger Stoller, from ORNL, purchased WESGO AL-300 and AL-995, polycrystalline alumina standards. The authors obtained some of each of these materials for making these measurements. The results have been shared with the other IEA partners, and P. Pells is preparing a summary document. They used the millimeter wave apparatus described below and elsewhere in detail to measure the dielectric properties of these materials at 90 to 100 Ghz at room temperature. The nominal purity of AL-300 was 0.967; the nominal purity of AL-995 was 0.995. Their method was to measure the power transmission coefficient. They used computerized data reduction techniques to compute k (the dielectric constant) and tanδ (the loss tangent) directly from transmission maxima and their corresponding frequencies; to verify this method, they applied the same technique to theoretically derived channel spectra that were obtained by solving exactly the complex transmission coefficient, given k and tanδ. The alumina material with a lower level of purity resulted in higher loss but lower dielectric constant. They obtained dielectric constants that were higher for all the materials than manufacturer-reported values taken at lower frequencies. In addition, they obtained higher dielectric constant values than those found by other investigators at 100 GHz for AL-995 and MACOR. Tanδ values were in good agreement with those of other investigators obtained by free-space methods and dispersive Fourier-transform techniques in the same frequency range

Investigation of dielectric relaxation in systems with hierarchical organization: From time to frequency domain and back again

Energy Technology Data Exchange (ETDEWEB)

Yokoi, Koki [Department of Physics, University of Wisconsin-Milwaukee, Milwaukee, WI (United States); Raicu, Valerică, E-mail: vraicu@uwm.edu [Department of Physics, University of Wisconsin-Milwaukee, Milwaukee, WI (United States); Department of Biological Sciences, University of Wisconsin-Milwaukee, Milwaukee, WI (United States)

2017-06-28

Relaxation in fractal structures was investigated theoretically starting from a simple model of a Cantorian tree and kinetic equations linking the change in the number of particles (e.g., electrical charges) populating each branch of the tree and their transfer to other branches or to the ground state. We numerically solved the system of differential equations obtained and determined the so-called cumulative distribution function of particles, which, in dielectric or mechanical relaxation parlance, is the same as the relaxation function of the system. As a physical application, we studied the relationship between the dielectric relaxation in time-domain and the dielectric dispersion in the frequency-domain. Upon choosing appropriate rate constants, our model described accurately well-known non-exponential and non-Debye time- and frequency-domain functions, such as stretched exponentials, Havrilliak–Negami, and frequency power law. Our approach opens the door to applying kinetic models to describe a wide array of relaxation processes, which traditionally have posed great challenges to theoretical modeling based on first principles. - Highlights: • Relaxation was investigated for a system of particles flowing through a Cantorian tree. • A set of kinetic equations was formulated and used to compute the relaxation function of the system. • The dispersion function of the system was computed from the relaxation function. • An analytical method was used to recover the original relaxation function from the dispersion function. • This formalism was used to study dielectric relaxation and dispersion in fractal structures.

Single crystal magnetic, dielectric and thermal studies of the relaxor ferroelectric Pb(Fe2/3W1/3)O3

International Nuclear Information System (INIS)

Ye, Z.G.; Sato, M.; Kita, E.; Bursill, L.A.; Schmid, H.

1998-01-01

The magnetic, dielectric and thermal properties of the complex perovskite Pb(Fe 2/3 W 1/3 )O 3 [PFW] have been studied on single crystals by means of a SQUID magnetometer, dielectric measurements and thermal analysis. Anomalies in the temperature dependence of the magnetization have revealed magnetic phase transitions at T N1 =350 K and T N2 =20 K. These two steps of antiferromagnetic ordering are attributed to the microstructural feature of the complex perovskite, characterized by ordered and disordered arrangements on the B-site, giving rise to a strong superexchange interaction of - Fe 3 + - O - Fe 3+ - type with a higher ordering temperature, and to a weak superexchange interaction of the B-site ordered elpasolite type - Fe 3+ + - O - W - O - Fe 3+ - with a lower Neel temperature. The low temperature antiferromagnetic phase exhibits a weak ferromagnetism. The dielectric properties of PFW show a relaxor ferroelectric behaviour with a dispersive maximum of permittivity at Tm (170 -190 K). The magnetic phase transition at T N2 =20 K results in anomalies both of the real part of permittivity and the dissipation factor, suggesting a magneto-electric coupling via magneto-structural interactions

Etching Enhancement Followed by Nitridation on Low-k SiOCH Film in Ar/C5F10O Plasma

Science.gov (United States)

Miyawaki, Yudai; Shibata, Emi; Kondo, Yusuke; Takeda, Keigo; Kondo, Hiroki; Ishikawa, Kenji; Okamoto, Hidekazu; Sekine, Makoto; Hori, Masaru

2013-02-01

The etching rates of low-dielectric-constant (low-k), porous SiOCH (p-SiOCH) films were increased by nitrogen-added Ar/C5F10O plasma etching in dual-frequency (60 MHz/2 MHz)-excited parallel plate capacitively coupled plasma. Previously, perfluoropropyl vinyl ether [C5F10O] provided a very high density of CF3+ ions [Nagai et al.: Jpn. J. Appl. Phys. 45 (2006) 7100]. Surface nitridation on the p-SiOCH surface exposed to Ar/N2 plasma led to the etching of larger amounts of p-SiOCH in Ar/C5F10O plasma, which depended on the formation of bonds such as =C(sp2)=N(sp2)- and -C(sp)≡N(sp).

Dielectric behaviour of (Ba,Sr)TiO3 perovskite borosilicate glass ceramics

International Nuclear Information System (INIS)

Yadav, Avadhesh Kumar; Gautam, C.R.

2013-01-01

Various perovskite (Ba,Sr)TiO 3 borosilicate glasses were prepared by rapid melt-quench technique in the glass system ((Ba 1-x Sr x ).TiO 3 )-(2SiO 2 .B 2 O 3 )-(K 2 O)-(La 2 O 3 ). On the basis of differential thermal analysis results, glasses were converted into glass ceramic samples by regulated heat treatment schedules. The dielectric behaviour of crystallized barium strontium titanate borosilicate glass ceramic samples shows diffuse phase transition. The study depicts the dielectric behaviour of glass ceramic sample BST5K1L0.2S814. The double relaxation was observed in glass ceramic samples corresponding 80/20% Ba/Sr due to change in crystal structure from orthorhombic to tetragonal and tetragonal to cubic with variation of temperature. The highest value of dielectric constant was found to be 48289 for the glass ceramic sample BST5K1L0.2S814. The high value of dielectric constant attributed to space charge polarization between the glassy phase and perovskite phase. Due to very high value of dielectric constant, such glass ceramics are used for high energy storage devices. La 2 O 3 acts as nucleating agent for crystallization of glass to glass ceramics and enhances the dielectric constant and retarded dielectric loss. Such glass ceramics can be used in high energy storage devices such as barrier layer capacitors, multilayer capacitors etc. (author)

Resonance dielectric dispersion of TEA-CoCl2Br2 nanocrystals incorporated into the PMMA matrix

Science.gov (United States)

Kapustianyk, V.; Shchur, Ya; Kityk, I.; Rudyk, V.; Lach, G.; Laskowski, L.; Tkaczyk, S.; Swiatek, J.; Davydov, V.

2008-09-01

The dielectric properties of TEA-CoCl2Br2 nanocrystals incorporated into the polymethylmethacrylate matrix within the frequency range of 3 × 105-2.6 × 109 Hz in the temperature region of 90-300 K were investigated. The considerable difference in the dielectric spectra of the nanocomposite compared to those of the bulk crystal and the pure polymer matrix was observed. The dielectric dispersion of the composite material reveals a resonance type (resonance frequency was found to be near 1.3 GHz) and may be qualitatively explained as the result of piezoelectric resonance on the nanocrystals. The model interpretation of this phenomenon based on the forced-dumped oscillator is presented.

In-beam dielectric properties of alumina

International Nuclear Information System (INIS)

Molla, J.; Ibarra, A.; Hodgson, E.R.

1995-01-01

The dielectric properties (permittivity and loss tangent) of a 99.7% purity alumina grade have been measured over a wide frequency range (1 kHz-15 GHz) before and after 2 MeV electron irradiation at different temperatures. The dielectric properties at 15 GHz were measured during irradiation. Both prompt and fluence effects are observed together with permanent changes which continue to evolve following irradiation. The behaviour is complex, consistent with both radiation induced electronic effects and aggregation processes. ((orig.))

Characterization of nanoparticle and porous ultra low-k using positron beam

International Nuclear Information System (INIS)

Xu, Jun; Moxom, J.; Suzuki, R.; Ohdaira, T.; Mills, A.P. Jr.

2003-01-01

Nanoparticle materials are important because they exhibit unique properties due to size effects, quantum tunneling, and quantum confinement. As particle sizes are reduced to the nanometer scale, presence of vacancy clusters is expected to affect properties of nanomaterials. A combination of positron lifetime spectroscopy, which tells size of vacancy clusters, and coincidence Doppler broadening of annihilation radiation, which tell where vacancy clusters are located was used to study defect structures on nanomaterials of Au nanoparticles embedded in MgO. Vacancy clusters were found on the surfaces of Au nanoparticles. When the packing density between multilevel interconnects in microelectronic devices increases, a low dielectric constant material is needed to minimize RC delay. Porous oxide films are some of these new low-k materials that have been actively studied by the microelectronics industry. An ideal porous material would consist of a network of closed, small pores with narrow size distribution. However, large and interconnected pores, so called 'killer pores', result in high current leakage and poor mechanical strength. Clearly, characterization and understanding of pore size and interconnectivity are important to optimize the design of porous materials. Using positron beam, we have found that pore percolation in porous methyl-silsesquioxane (MSQ) films strongly depends on the molecular mass of pore generators. (author)

Thermal conductivity at very low temperature

Energy Technology Data Exchange (ETDEWEB)

Locatelli, M [CEA Centre d' Etudes Nucleaires de Grenoble, 38 (France). Service des Basses Temperatures

1976-06-01

The interest of low and very low temperatures in solid physics and especially that of thermal measurements is briefly mentioned. Some notes on the thermal conductivity of dielectrics, the method and apparatus used to measure this property at very low temperatures (T<1.5K) and some recent results of fundamental and applied research are then presented.

Synthesis and controlling the optical and dielectric properties of CMC/PVA blend via γ-rays irradiation

Energy Technology Data Exchange (ETDEWEB)

El Sayed, A.M., E-mail: ams06@fayoum.edu.eg

2014-02-15

Highlights: • PVA/CMC blend films were prepared by solution casting method. • The films were irradiated with γ-rays at the dose range of 0–70 kGy. • UV-vis spectroscopy was performed to study the changes in the optical properties. • The influence of γ-rays irradiation on the dielectric relaxation was studied. -- Abstract: Carboxymethyl cellulose (CMC)/Polyvinyl alcohol (PVA) blend films were prepared by solution casting method. Then, these films were irradiated with γ-rays from a Co-60 source at doses over the range 0–70 kGy to investigate the modifications induced in the optical and dielectric properties. The dielectric constant (ε′) was measured in the temperature range 303–408 K and in the frequency range 10 kHz–1 MHz. The indirect optical band gap was found to increase within the dose range 0–10 kGy, and to decrease at the higher doses. The refractive index values, however, showed a reversed behavior. The highest transmittance percentage was obtained at 10 kGy dose. According to the frequency and temperature dependence of ε′, α- relaxation peaks were observed in all samples and assigned to the micro-Brownian motion of the blend chains. The values of ε′ showed a decrease in the dose range 0–10 kGy and an increase in the dose range 10–70 kGy. The ac conductivity σ{sub ac} (T) showed an Arrhenius type behavior separated into two distinct regions. The results of the present system are compared with those of similar materials.

Synthesis and controlling the optical and dielectric properties of CMC/PVA blend via γ-rays irradiation

International Nuclear Information System (INIS)

El Sayed, A.M.

2014-01-01

Highlights: • PVA/CMC blend films were prepared by solution casting method. • The films were irradiated with γ-rays at the dose range of 0–70 kGy. • UV-vis spectroscopy was performed to study the changes in the optical properties. • The influence of γ-rays irradiation on the dielectric relaxation was studied. -- Abstract: Carboxymethyl cellulose (CMC)/Polyvinyl alcohol (PVA) blend films were prepared by solution casting method. Then, these films were irradiated with γ-rays from a Co-60 source at doses over the range 0–70 kGy to investigate the modifications induced in the optical and dielectric properties. The dielectric constant (ε′) was measured in the temperature range 303–408 K and in the frequency range 10 kHz–1 MHz. The indirect optical band gap was found to increase within the dose range 0–10 kGy, and to decrease at the higher doses. The refractive index values, however, showed a reversed behavior. The highest transmittance percentage was obtained at 10 kGy dose. According to the frequency and temperature dependence of ε′, α- relaxation peaks were observed in all samples and assigned to the micro-Brownian motion of the blend chains. The values of ε′ showed a decrease in the dose range 0–10 kGy and an increase in the dose range 10–70 kGy. The ac conductivity σ ac (T) showed an Arrhenius type behavior separated into two distinct regions. The results of the present system are compared with those of similar materials

Cellulose Triacetate Dielectric Films For Capacitors

Science.gov (United States)

Yen, Shiao-Ping S.; Jow, T. Richard

1994-01-01

Cellulose triacetate investigated for use as dielectric material in high-energy-density capacitors for pulsed-electrical-power systems. Films of cellulose triacetate metalized on one or both sides for use as substrates for electrodes and/or as dielectrics between electrodes in capacitors. Used without metalization as simple dielectric films. Advantages include high breakdown strength and self-healing capability.

Dielectric properties of gadolinium molybdate in low- and infralow frequency electric fields. Diehlektricheskie svojstva molibdata gadoliniya v nizko- i infranizkochastotnykh ehlektricheskikh polyakh

Energy Technology Data Exchange (ETDEWEB)

Galiyarova, N M; Gorin, S V; Dontsova, L I; Shil' nikov, A V; Shuvalov, L A [Volgogradskij Inzhenerno-Stroitel' nyj Inst., Volgograd (Russian Federation) AN SSSR, Moscow (Russian Federation). Inst. Kristallografii

1992-10-01

Temperature dependences of complex dielectric permittivity of gadolinium molybdate (GMO) in low- (LF) and infralow-frequency (ILF) electric fields with 0.1 V[center dot]cm[sup -1] amplitude within 0.25-10[sup 4] Hz frequency range are studied. Substantial effect of the crystal prehistory on LF and ILF dielectric properties and domain structure state is revealed. An anomalous reduction of complex dielectric permittivity accompanied by the occurrence of the Debye LF-dispersion of permittivity is detected under the sample cooling from a nonpolar phase.

Dielectric Constant Measurements of Solid 4He

Science.gov (United States)

Yin, L.; Xia, J. S.; Huan, C.; Sullivan, N. S.; Chan, M. H. W.

2011-03-01

Careful measurements of the dielectric properties of solid 4He have been carried out down to 35 mK, considerably lower than the temperature range of previous studies. The sample was prepared from high purity gas with 3He concentrations of the order of 200 ppb and were formed by the blocked capillary method. The molar volume of the sample was 20.30 cm3. The dielectric constant of the samples was found to be independent of temperature down to 120 mK before showing a continuous increase with decreasing temperature and saturating below 50 mK. The total increase in ɛ is 2 parts in 10-5. The temperature dependence of ɛ mimics the increase in the resonant frequency found in the torsional oscillator studies and also the increase found in the shear modulus measurements.

Dielectric and electrical conductivity studies of bulk lead (II) oxide (PbO)

Energy Technology Data Exchange (ETDEWEB)

Darwish, A.A.A., E-mail: aaadarwish@gmail.com [Department of Physics, Faculty of Education at Al-Mahweet, Sana’a University, Al-Mahwit (Yemen); Department of Physics, Faculty of Science, University of Tabuk, P.O. Box 741, Tabuk 71491, Tabuk (Saudi Arabia); El-Zaidia, E.F.M.; El-Nahass, M.M. [Department of Physics, Faculty of Education, Ain Shams University, Rorxy, Cairo 11757 (Egypt); Hanafy, T.A. [Department of Physics, Faculty of Science, University of Tabuk, P.O. Box 741, Tabuk 71491, Tabuk (Saudi Arabia); Department of Physics, Faculty of Science, Fayoum University, 63514 El Fayoum (Egypt); Al-Zubaidi, A.A. [Department of Physics, Faculty of Science, University of Tabuk, P.O. Box 741, Tabuk 71491, Tabuk (Saudi Arabia)

2014-03-15

Highlights: • The AC measurements of PbO were measured at temperature range 313–523 K. • The dielectric constants increased with temperature. • The mechanism responsible for AC conduction is electronic hopping. -- Abstract: The dielectric properties, the impedance spectroscopy and AC conductivity of bulk PbO have been investigated as a function of frequency and temperature. The measurements were carried out in the frequency range from 40 to 5 × 10{sup 6} Hz and in temperature range from 313 to 523 K. The frequency response of dielectric constant, ε{sub 1}, and dielectric loss index, ε{sub 2}, as a function of temperature were studied. The values of ε{sub 1} and ε{sub 2} were found to decrease with the increase in frequency. However, they increase with the increase in temperature. The presence of a single arc in the complex modulus spectrum at different temperatures confirms the single-phase character of the PbO. The AC conductivity exhibited a universal dynamic response: σ{sub AC} = Aω{sup s}. The AC conductivity was also found to increase with increasing temperature and frequency. The correlation barrier hopping (CBH) model was found to apply to the AC conductivity data. The calculated values of s were decreased with temperature. This behavior reveals that the conduction mechanism for PbO samples is CBH. The activation energy for AC conductivity decreases with increasing frequency. This confirms that the hopping conduction to the dominant mechanism for PbO samples.

Electromigration study of Al thin films deposited on low dielectric polyimide and SiO sub 2 ILD

CERN Document Server

Eun, B S

1999-01-01

The electromigration characteristics of Al-1 %Si-0.5 %Cu films deposited onto three kinds of polyimides (PI-2734, PI-2611, and BG-2480) and onto SiO sub 2 prepared by low pressure chemical vapor deposition have been investigated. The Al lines deposited onto SiO sub 2 showed about a one-order higher electromigration lifetime than those deposited onto polyimide interlayer dielectrics (ILDs). The electromigration characteristics degraded as the polyimide thickness increased. Joule heat which accumulated at the Al/polyimide interface was the main cause of the decrease in the electromigration reliability because the thermal conductivity of the polyimides was about one order lower than that of SiO sub 2.

Preparation, Structural and Dielectric Properties of Solution Grown Polyvinyl Alcohol(PVA) Film

Science.gov (United States)

Nangia, Rakhi; Shukla, Neeraj K.; Sharma, Ambika

2017-08-01

Flexible dielectrics with high permittivity have been investigated extensively due to their applications in electronic industry. In this work, structural and electrical characteristics of polymer based film have been analysed. Poly vinyl alcohol (PVA) film was prepared by solution casting method. X-ray diffraction (XRD) characterization technique is used to investigate the structural properties. The semi-crystalline nature has been determined by the analysis of the obtained XRD pattern. Electrical properties of the synthesized film have been analysed from the C-V and I-V curves obtained at various frequencies and temperatures. Low conductivity values confirm the insulating behaviour of the film. However, it is found that conductivity increases with temperature. Also, the dielectric permittivity is found to be higher at lower frequencies and higher temperatures, that proves PVA to be an excellent dielectric material which can be used in interface electronics. Dielectric behaviour of the film has been explained based on dipole orientations to slow and fast varying electric field. However further engineering can be done to modulate the structural, electrical properties of the film.

Flexible Ultrahigh-Temperature Polymer-Based Dielectrics with High Permittivity for Film Capacitor Applications

Directory of Open Access Journals (Sweden)

Zejun Pu

2017-11-01

Full Text Available In this report, flexible cross-linked polyarylene ether nitrile/functionalized barium titanate(CPEN/F-BaTiO3 dielectrics films with high permittivitywere prepared and characterized. The effects of both the F-BaTiO3 and matrix curing on the mechanical, thermal and dielectric properties of the CPEN/F-BaTiO3 dielectric films were investigated in detail. Compared to pristine BaTiO3, the surface modified BaTiO3 particles effectively improved their dispersibility and interfacial adhesion in the polymer matrix. Moreover, the introduction of F-BaTiO3 particles enhanced dielectric properties of the composites, with a relatively high permittivity of 15.2 and a quite low loss tangent of 0.022 (1 kHz when particle contents of 40 wt % were utilized. In addition, the cyano (–CN groups of functional layer also can serve as potential sites for cross-linking with polyarylene ether nitrile terminated phthalonitrile (PEN-Ph matrix and make it transform from thermoplastic to thermosetting. Comparing with the pure PEN-ph film, the latter results indicated that the formation of cross-linked network in the polymer-based system resulted in increased tensile strength by ~67%, improved glass transition temperature (Tg by ~190 °C. More importantly, the CPEN/F-BaTiO3 composite films filled with 30 wt % F-BaTiO3 particles showed greater energy density by nearly 190% when compared to pure CPEN film. These findings enable broader applications of PEN-based composites in high-performance electronics and energy storage devices materials used at high temperature.

Organic dielectrics in high voltage cables

Energy Technology Data Exchange (ETDEWEB)

Vermeer, J

1962-03-01

It appears that the limit has been reached in the applicability of oil-impregnated paper as the dielectric for ehv cables, as with rising voltages the prevention of conductor losses becomes increasingly difficult, while the dielectric losses of the insulation, increasing as the square of the voltage, contribute to a greater extent to the temperature rise of the conductor. The power transmitting capacity of ehv cables reaches a maximum at 500 to 600 kV for these reasons. Apart from artificial cooling, a substantial improvement can be obtained only with the use of insulating materials with much lower dielectric losses; these can moreover be applied with a smaller wall thickness, but this means higher field strengths. Synthetic polymer materials meet these requirements but can be used successfully only in the form of lapped film tapes impregnated with suitable liquids. The electrical properties of these heterogeneous dielectrics, in particular, their impulse breakdown strengths are studied in detail.

Elaboration and dielectric characterization of a doped ferroelectric ...

African Journals Online (AJOL)

... 1150,1180 and 1200 °C successively to optimize the sintering temperature optimal where the density of the sample is maximum (near theoretical density) and therefore the product has better physical quality. The study of dielectric properties of all samples showed a high permittivity dielectric εr = 18018, low dielectric loss: ...

Dielectric spectroscopy of Ag-starch nanocomposite films

Science.gov (United States)

Meena; Sharma, Annu

2018-04-01

In the present work Ag-starch nanocomposite films were fabricated via chemical reduction route. The formation of Ag nanoparticles was confirmed using transmission electron microscopy (TEM). Further the effect of varying concentration of Ag nanoparticles on the dielectric properties of starch has been studied. The frequency response of dielectric constant (ε‧), dielectric loss (ε″) and dissipation factor tan(δ) has been studied in the frequency range of 100 Hz to 1 MHz. Dielectric data was further analysed using Cole-Cole plots. The dielectric constant of starch was found to be 4.4 which decreased to 2.35 in Ag-starch nanocomposite film containing 0.50 wt% of Ag nanoparticles. Such nanocomposites with low dielectric constant have potential applications in microelectronic technologies.

Investigation of the niobium-oxygen system under low pressure and between 550 K and 2350 K: solid solution, surface overlay and reactivity

International Nuclear Information System (INIS)

Jupille, Jacques

1974-09-01

This research thesis addresses the behaviour of transition metals when interacting with oxygen, more particularly in the case of phase formation, but also adsorption and desorption which occur in the case of interaction with low pressure oxygen. It focuses on the case of niobium in solid solution. After a description of phases present in the niobium-oxygen system, and a discussion of reactivities of oxygen and water vapour, the author describes the experimental methods (apparatus and installations, samples, measured values), discusses the study of the surface-volume transfer constant of the niobium-oxygen solution, and the niobium-oxygen interaction mechanisms at high (superior to 1700 K) and low (inferior to 1000 K) temperatures: oxide desorption, oxygen reaction kinetics

Influence of ultrasonic irradiation on ozone generation in a dielectric barrier discharge

International Nuclear Information System (INIS)

Kusano, Y; Drews, J; Leipold, F; Fateev, A; Bardenshtein, A; Krebs, N

2012-01-01

An atmospheric pressure dielectric barrier discharge (DBD) was generated in an N 2 /O 2 gas mixture at room temperature with and without ultrasonic irradiation to investigate ozone production. Powerful ultrasonic irradiation with the sound pressure level of approximately 150 dB into the DBD can enhance ozone production especially when the DBD was driven at a frequency of 15 kHz.

SIMS studies of low-K materials

International Nuclear Information System (INIS)

Lin Xuefeng; Smith, Stephen P.

2006-01-01

We report progress in conducting quantitative SIMS analyses of low-K materials. Electron-beam (e-beam) pre-irradiation of SIMS measurement sites was used to study the e-beam-induced effects on SIMS depth profiling of a porous organosilicate low-K material. Pre-irradiation of the sample surface using the e-beam causes a reduction in the thickness of the low-K film. SIMS profiling was used to sputter to identifiable marker positions within the pre-irradiated film. Physical measurement of the thickness of the remaining film was used to show that the e-beam-induced reduction in thickness occurs uniformly throughout the pre-irradiated film. Exposure of the film to the e-beam prior to SIMS analysis also resulted in minor changes in the composition of the film. However, pre-irradiation of the film is not part of the normal SIMS measurement procedure. We conclude that when the e-beam irradiation is used only for charge compensation during SIMS depth profiling, the SIMS analysis of the low-K material will not be significantly affected

First observation of the decay B{sub s}{sup 0}{yields}K{sup Low-Asterisk 0}K{sup Macron Low-Asterisk 0}

Energy Technology Data Exchange (ETDEWEB)

Aaij, R. [Nikhef National Institute for Subatomic Physics, Amsterdam (Netherlands); Abellan Beteta, C. [Universitat de Barcelona, Barcelona (Spain); Adeva, B., E-mail: Bernardo.Adeva@usc.es [Universidad de Santiago de Compostela, Santiago de Compostela (Spain); Adinolfi, M. [H.H. Wills Physics Laboratory, University of Bristol, Bristol (United Kingdom); Adrover, C. [CPPM, Aix-Marseille Universite, CNRS/IN2P3, Marseille (France); Affolder, A. [Oliver Lodge Laboratory, University of Liverpool, Liverpool (United Kingdom); Ajaltouni, Z. [Clermont Universite, Universite Blaise Pascal, CNRS/IN2P3, LPC, Clermont-Ferrand (France); Albrecht, J.; Alessio, F. [European Organization for Nuclear Research (CERN), Geneva (Switzerland); Alexander, M. [School of Physics and Astronomy, University of Glasgow, Glasgow (United Kingdom); Alkhazov, G. [Petersburg Nuclear Physics Institute (PNPI), Gatchina (Russian Federation); Alvarez Cartelle, P. [Universidad de Santiago de Compostela, Santiago de Compostela (Spain); Alves, A.A. [Sezione INFN di Roma La Sapienza, Roma (Italy); Amato, S. [Universidade Federal do Rio de Janeiro (UFRJ), Rio de Janeiro (Brazil); Amhis, Y. [Ecole Polytechnique Federale de Lausanne (EPFL), Lausanne (Switzerland); Anderson, J. [Physik-Institut, Universitaet Zuerich, Zuerich (Switzerland); Appleby, R.B. [School of Physics and Astronomy, University of Manchester, Manchester (United Kingdom); Aquines Gutierrez, O. [Max-Planck-Institut fuer Kernphysik (MPIK), Heidelberg (Germany); Archilli, F. [Laboratori Nazionali dell' INFN di Frascati, Frascati (Italy); European Organization for Nuclear Research (CERN), Geneva (Switzerland); Collaboration: LHCb Collaboration; and others

2012-03-13

The first observation of the decay B{sub s}{sup 0}{yields}K{sup Low-Asterisk 0}K{sup Macron Low-Asterisk 0} is reported using 35 pb{sup -1} of data collected by LHCb in proton-proton collisions at a centre-of-mass energy of 7 TeV. A total of 49.8{+-}7.5B{sub s}{sup 0}{yields}(K{sup +}{pi}{sup -})(K{sup -}{pi}{sup +}) events are observed within {+-}50 MeV/c{sup 2} of the B{sub s}{sup 0} mass and 746 MeV/c{sup 2}K{pi}}<1046 MeV/c{sup 2}, mostly coming from a resonant B{sub s}{sup 0}{yields}K{sup Low-Asterisk 0}K{sup Macron Low-Asterisk 0} signal. The branching fraction and the CP-averaged K{sup Low-Asterisk 0} longitudinal polarization fraction are measured to be B(B{sub s}{sup 0}{yields}K{sup Low-Asterisk 0}K{sup Macron Low-Asterisk 0})=(2.81{+-}0.46(stat.){+-}0.45(syst.){+-}0.34(f{sub s}/f{sub d})) Multiplication-Sign 10{sup -5} and f{sub L}=0.31{+-}0.12(stat.){+-}0.04(syst.).

Differential Thermal Analysis and Dielectric Studies on 2-Methyl-2-Nitro-Propane under High Pressure

Science.gov (United States)

Büsing, D.; Jenau, M.; Reuter, J.; Würflinger, A.; Tamarit, J. Li.

1995-05-01

Differential thermal analysis and dielectric studies under pressures up to 300 MPa and temperatures of about 200 to 350 K have been performed on 2-methyl-2-nitro-propane (TBN). TBN displays an orientationally disordered phase (ODIC), solid I, and two non-plastic phases, solids II and III. The coexistence region of the plastic phase I increases with increasing pressure, whereas the low-temperature phase II apparently vanishes at a triple point I, II, III, above 300 MPa. The static permittivity increases on freezing, characterizing the solid I as an ODIC phase. In the frame of the Kirkwood-Onsager-Fröhlich theory the g-factor is about unity, discounting specific dielectric correlations. The dielectric behaviour of TBN is similar to previously studied related compounds, such as 2-chloro-2-methyl-propane or 2-brome- 2-methyl-propane

Dielectric, piezoelectric properties of MnO2-doped (K0.5Na0.5)NbO3–0.05LiNbO3 crystal grown by flux-Bridgman method

International Nuclear Information System (INIS)

Liu, Ying; Xu, Guisheng; Liu, Jinfeng; Yang, Danfeng; Chen, Xiaxia

2014-01-01

Highlights: • KNN–0.05LN based single crystals were grown by flux-Bridgman method. • Dielectric, piezoelecrc and ferroelectric properties were studied. • The effect of MnO 2 doping on the crystals' properties. • Dielectric and other properties were improved due to MnO 2 doping. - Abstract: Lead-free potassium sodium niobate piezoelectric single crystals substituted with lithium and then doped with MnO 2 (K 0.5 Na 0.5 )NbO 3 –0.05LiNbO 3 –yMnO 2 (y = 0%, 1.0% and 1.5%) (abbreviated as KNN–0.05LN–yMnO 2 ) have been grown by flux-Bridgman method using KCl–K 2 CO 3 eutectic composition as the flux. Their actual composition as well as the dielectric and piezoelectric properties were studied. Their actual composition deviated from the ratio of the raw materials due to different segregation coefficients of K and Na. The orthorhombic–tetragonal (T o–t ) and tetragonal–cubic phase transition temperature (the Curie temperature T c ) of the single crystal appears at 186 °C and 441 °C, respectively, for KNN–0.05LN–1.0%MnO 2 , shift to higher temperatures compared with that of pure KNN–0.05LN crystals, according to the dielectric permittivity versus temperature loops. The KNN–0.05LN–1.0%MnO 2 (001) plate shows higher piezoelectric coefficient d 33 and dielectric permittivity ε r when compared with pure KNN–0.05LN crystal, being on the order of 226 pC/N and 799 (161 pC/N and 530 for KNN–0.05LN), respectively. These excellent properties show that MnO 2 dopant is effective in improving KNN–0.05LN based piezoelectric crystals

A radiation-hardened 1K-bit dielectrically isolated random access memory

International Nuclear Information System (INIS)

Sandors, T.J.; Boarman, J.W.; Kasten, A.J.; Wood, G.M.

1982-01-01

Dielectric Isolation has been used for many years as the bipolar technology for latch-up free, radiation hardened integrated circuits in strategic systems. The state-of-the-art up to this point has been the manufacture of MSI functions containing a maximum of several hundred isolated components. This paper discusses a 1024 Bit Random Access Memory chip containing over 4000 dielectrically isolated components which has been designed for strategic radiation environments. The process utilized and the circuit design of the 1024 Bit RAM have been previously discussed. The techniques used are similar to those employed for the MX digital integrated circuits except for specific items required to make this a true LSI technology. These techniques, along with electrical and radiation data for the RAM, are presented

Dielectric properties of binary solutions a data handbook

CERN Document Server

Akhadov, Y Y

1980-01-01

Dielectric Properties of Binary Solutions focuses on the investigation of the dielectric properties of solutions, as well as the molecular interactions and mechanisms of molecular processes that occur in liquids. The book first discusses the fundamental formulas describing the dielectric properties of liquids and dielectric data for binary systems of non-aqueous solutions. Topics include permittivity and dielectric dispersion parameters of non-aqueous solutions of organic and inorganic compounds. The text also tackles dielectric data for binary systems of aqueous solutions, including permittiv

Evaluation of structure, dielectric and electrical properties of (Li/Ta/Sb modified (Na, K NbO3 lead-free ceramics with excess Na concentration

Directory of Open Access Journals (Sweden)

Md. Kashif Shamim

2017-12-01

Full Text Available Polycrystalline perovskite structured (Li0.04 (Na0.54+x K0.460.96 (Nb0.81Ta0.15 Sb0.04 O3 ceramics with x=0.00, 0.005 and 0.01 mole excess Na concentration were prepared by solid state sintering method. The present study relates the role of excess Na addition with the stoichiometry, density, structure, dielectric and ferroelectric properties of the samples. X-ray diffraction (XRD pattern exhibits single phase orthorhombic structure. The characteristic Raman modes were observed due to translational modes of cations and vibrational modes of NbO6 octahedra and no structural phase transition were observed. This confirms the formation of single phase perovskite structure and is consistent with XRD results. The dielectric permittivity increases about two times, while dielectric loss decreases by four times for x=0.01 composition. The electrical measurements carried by Complex Impedance spectroscopic analysis suggest negative temperature coefficient of resistance (NTCR behavior.