Low-k films modification under EUV and VUV radiation

International Nuclear Information System (INIS)

Rakhimova, T V; Rakhimov, A T; Mankelevich, Yu A; Lopaev, D V; Kovalev, A S; Vasil'eva, A N; Zyryanov, S M; Kurchikov, K; Proshina, O V; Voloshin, D G; Novikova, N N; Krishtab, M B; Baklanov, M R

2014-01-01

Modification of ultra-low-k films by extreme ultraviolet (EUV) and vacuum ultraviolet (VUV) emission with 13.5, 58.4, 106, 147 and 193 nm wavelengths and fluences up to 6 × 10 18  photons cm −2 is studied experimentally and theoretically to reveal the damage mechanism and the most ‘damaging’ spectral region. Organosilicate glass (OSG) and organic low-k films with k-values of 1.8–2.5 and porosity of 24–51% are used in these experiments. The Si–CH 3 bonds depletion is used as a criterion of VUV damage of OSG low-k films. It is shown that the low-k damage is described by two fundamental parameters: photoabsorption (PA) cross-section σ PA and effective quantum yield φ of Si–CH 3 photodissociation. The obtained σ PA and φ values demonstrate that the effect of wavelength is defined by light absorption spectra, which in OSG materials is similar to fused silica. This is the reason why VUV light in the range of ∼58–106 nm having the highest PA cross-sections causes strong Si–CH 3 depletion only in the top part of the films (∼50–100 nm). The deepest damage is observed after exposure to 147 nm VUV light since this emission is located at the edge of Si–O absorption, has the smallest PA cross-section and provides extensive Si–CH 3 depletion over the whole film thickness. The effective quantum yield slowly increases with the increasing porosity but starts to grow quickly when the porosity exceeds the critical threshold located close to a porosity of ∼50%. The high degree of pore interconnectivity of these films allows easy movement of the detached methyl radicals. The obtained results have a fundamental character and can be used for prediction of ULK material damage under VUV light with different wavelengths. (paper)

Atmospheric Pressure Plasma Jet-Assisted Synthesis of Zeolite-Based Low-k Thin Films.

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Huang, Kai-Yu; Chi, Heng-Yu; Kao, Peng-Kai; Huang, Fei-Hung; Jian, Qi-Ming; Cheng, I-Chun; Lee, Wen-Ya; Hsu, Cheng-Che; Kang, Dun-Yen

2018-01-10

Zeolites are ideal low-dielectric constant (low-k) materials. This paper reports on a novel plasma-assisted approach to the synthesis of low-k thin films comprising pure-silica zeolite MFI. The proposed method involves treating the aged solution using an atmospheric pressure plasma jet (APPJ). The high reactivity of the resulting nitrogen plasma helps to produce zeolite crystals with high crystallinity and uniform crystal size distribution. The APPJ treatment also remarkably reduces the time for hydrothermal reaction. The zeolite MFI suspensions synthesized with the APPJ treatment are used for the wet deposition to form thin films. The deposited zeolite thin films possessed dense morphology and high crystallinity, which overcome the trade-off between crystallinity and film quality. Zeolite thin films synthesized using the proposed APPJ treatment achieve low leakage current (on the order of 10 -8 A/cm 2 ) and high Young's modulus (12 GPa), outperforming the control sample synthesized without plasma treatment. The dielectric constant of our zeolite thin films was as low as 1.41. The overall performance of the low-k thin films synthesized with the APPJ treatment far exceed existing low-k films comprising pure-silica MFI.

The Influence of Temperature on the Formation of Cubic Structured CdO Nanoparticles and Their Thin Films from Bis(2-hydroxy-1-naphthaldehydatocadmium(II Complex via Thermal Decomposition Technique

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Thokozani Xaba

2017-01-01

Full Text Available Recently, researchers have developed a great interest in the synthesis of metal oxide nanoparticles due to their potential applications in various fields of science and industry, especially in catalysis, due to their high activity. Bis(2-hydroxy-1-naphthaldehydatocadmium(II complexes were prepared and used as precursors for the synthesis of cadmium oxide nanoparticles via thermal decomposition method using HDA as a stabilizing agent. The prepared complexes were also used as single source precursors to prepare CdO thin films onto the glass substrates by spin coating and were annealed at 250, 300, and 350°C, respectively. The precursors were characterized by Fourier transform infrared (FTIR spectroscopy, elemental analysis, nuclear magnetic resonance (NMR, and thermogravimetric analysis (TGA. The synthesized CdO nanoparticles and CdO thin films were characterized by ultraviolet-visible (UV-vis spectroscopy, photoluminescence (PL, X-ray diffraction (XRD, transmission electron microscopy (TEM, scanning electron microscopy (SEM, and atomic force microscopy (AFM.

X-ray characterization of CdO thin films grown on a-, c-, r- and m-plane sapphire by metalorganic vapour phase-epitaxy

Energy Technology Data Exchange (ETDEWEB)

Zuniga-Perez, J.; Martinez-Tomas, C.; Munoz-Sanjose, V. [Departamento de Fisica Aplicada y Electromagnetismo, Universitat de Valencia, C/Dr. Moliner 50, 46100 Burjassot (Spain)

2005-02-01

CdO thin films have been grown on a-plane (11 anti 20), c-plane (0001), r-plane (01 anti 12) and m-plane (10 anti 10) sapphire substrates by metalorganic vapour-phase epitaxy (MOVPE). The effects of different substrate orientations on the structural properties of the films have been analyzed by means of X-ray diffraction, including {theta}-2{theta} scans, pole figures and rocking curves. (111), (001) and (110) orientations are found on a-, r-, and m-sapphire respectively, while films deposited on c-plane exhibit an orientation in which no low-index crystal plane is parallel to the sample surface. The recorded pole figures have allowed determining the epitaxial relationships between films and substrates, as well as the presence or absence of extended defects. The rocking curves indicate that high quality thin films, in terms of tilt and twist, can be obtained on r-, c- and m-plane sapphire, while further improvement is needed over the a-orientation. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

X-ray characterization of CdO thin films grown on a-, c-, r- and m-plane sapphire by metalorganic vapour phase-epitaxy

International Nuclear Information System (INIS)

Zuniga-Perez, J.; Martinez-Tomas, C.; Munoz-Sanjose, V.

2005-01-01

CdO thin films have been grown on a-plane (11 anti 20), c-plane (0001), r-plane (01 anti 12) and m-plane (10 anti 10) sapphire substrates by metalorganic vapour-phase epitaxy (MOVPE). The effects of different substrate orientations on the structural properties of the films have been analyzed by means of X-ray diffraction, including θ-2θ scans, pole figures and rocking curves. (111), (001) and (110) orientations are found on a-, r-, and m-sapphire respectively, while films deposited on c-plane exhibit an orientation in which no low-index crystal plane is parallel to the sample surface. The recorded pole figures have allowed determining the epitaxial relationships between films and substrates, as well as the presence or absence of extended defects. The rocking curves indicate that high quality thin films, in terms of tilt and twist, can be obtained on r-, c- and m-plane sapphire, while further improvement is needed over the a-orientation. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Elastic properties of porous low-k dielectric nano-films

Science.gov (United States)

Zhou, W.; Bailey, S.; Sooryakumar, R.; King, S.; Xu, G.; Mays, E.; Ege, C.; Bielefeld, J.

2011-08-01

Low-k dielectrics have predominantly replaced silicon dioxide as the interlayer dielectric for interconnects in state of the art integrated circuits. In order to further reduce interconnect RC delays, additional reductions in k for these low-k materials are being pursued via the introduction of controlled levels of porosity. The main challenge for such dielectrics is the substantial reduction in elastic properties that accompanies the increased pore volume. We report on Brillouin light scattering measurements used to determine the elastic properties of these films at thicknesses well below 200 nm, which are pertinent to their introduction into present ultralarge scale integrated technology. The observation of longitudinal and transverse standing wave acoustic resonances and their transformation into traveling waves with finite in-plane wave vectors provides for a direct non-destructive measure of the principal elastic constants that characterize the elastic properties of these porous nano-scale films. The mode dispersion further confirms that for porosity levels of up to 25%, the reduction in the dielectric constant does not result in severe degradation in the Young's modulus and Poisson's ratio of the films.

Effect of doping concentration on the structural, morphological, optical and electrical properties of Mn-doped CdO thin films

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Manjula N.

2015-12-01

Full Text Available Thin films of manganese-doped cadmium oxide (CdO:Mn with different Mn-doping levels (0, 1, 2, 3 and 4 at.% were deposited on glass substrates by employing an inexpensive, simplified spray technique using a perfume atomizer at 375 °C. The influence of Mn incorporation on the structural, morphological, optical and electrical properties of CdO films has been studied. All the films exhibit cubic crystal structure with a (1 1 1 preferential orientation. Mn-doping causes a slight shift of the (1 1 1 diffraction peak towards higher angle. The crystallite size of the films is found to decrease from 34.63 nm to 17.68 nm with an increase in Mn doping concentration. The CdO:Mn film coated with 1 at.% Mn exhibit a high transparency of nearly 90 % which decreases for higher doping concentration. The optical band gap decreases with an increase in Mn doping concentration. All the films have electrical resistivity of the order of 10−4 Ω·cm.

Farklı Oranlarda Tiyoüre Katkısının Nanoyapılı Kadmiyum Oksit (CdO Filmlerin Fiziksel Özellikleri Üzerine Etkisinin İncelenmesi

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Raşit AYDIN

2017-05-01

Full Text Available Bu çalışmanın amacı nanoyapılı CdO filmlerin fiziksel özelliklerine tiyoüre konsantrasyonunun etkisini incelemektir. Bunun için farklı tiyoüre konsantrasyonlarındaki (%0, 0.5, 1 ve 2 dört seri CdO film soda lime cam altlık üzerine SILAR tekniği kullanılarak büyütüldü. Bu filmlerin morfolojileri, kristal yapıları ve optik özellikleri sırasıyla MM, XRD ve UV-visible spektroskopi teknikleri ile karakterize edilmiştir. MM görüntüleri tiyoüre konsantrasyonunun nanoyapılı CdO filmlerin yüzey morfolojilerini etkilediğini göstermektedir. CdO filmlerinin düzlemlerinin tercihli yöneliminin tiyoüre konsantrasyon değerine kuvvetle bağlı olduğunu XRD analizinden elde edilen sonuçlar ortaya koymaktadır. UV-vis analizinden, tiyoüre miktarı arttıkça CdO filmlerinin optik enerji bant aralığının (Eg önce azaldığı ve daha sonra tekrar artan konsantrasyonla arttığı belirlenmiş ve bu enerji değerlerinin (2.25 - 2.13 eV aralığında olduğu bulunmuştur.

Improved thermoelectric performance of CdO by adding SiC fibers versus by adding SiC nanoparticles inclusions

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Liang, S.; Li, Longjiang

2018-03-01

We report the improved thermoelectric (TE) performance of CdO by alloying with SiC fibers. In contrast to the lowered thermoelectric figure of merit (ZT) in a CdO matrix with SiC nanoparticle composites, an appreciable ZT value increment of about 36% (from 0.32 to 0.435) at 1000 K was obtained in the CdO matrix with SiC fiber composites. Both kinds of composites show substantially decreased thermal conductivity due to additional phonon scattering by the nano-inclusions. Compared to the very high electrical resistivity (ρ ˜ 140 μΩ m) for 5 at. % SiC nanoparticle composites, SiC fiber composites favorably maintained a very low ρ (˜30 μΩ m) even with 5 at. % SiC at 1000 K. We think the substantial difference of specific surface areas of these two nano-inclusions (30 m2/g for fibers vs 300 m2/g for nanoparticles) might play a crucial role to fine tune the TE performance. Larger interface could be inductive to diffusion and electron acceptor activation, which affect carrier mobility considerably. This work might hint at an alternative approach to improve TE materials' performance.

Optical, structural and surface characterization of ultrasonically sprayed CdO:F films

International Nuclear Information System (INIS)

Akyuz, I.; Kose, S.; Ketenci, E.; Bilgin, V.; Atay, F.

2011-01-01

Research highlights: → The effect of F doping on the optical, structural and surface properties of ultrasonically sprayed CdO films has been investigated. F doping affected each of these properties. → The low cost of the production system is an advantage for potential applications of these films. CF4 film caused the transmittance values to increase which is a desired development for transparent conducting oxide industry. → Low reflectance value of CF2 film makes this sample a promising material for anti-reflection coatings. → F doping has found to be an alternative solution to increase the narrow band gap of CdO films. This is an other development of CdO:F films for optoelectronic and photovoltaic solar cell applications. → Rough samples may be an alternative in single-junction μc-Si solar cells having superstrate configuration. When we take into account the refractive index and rough surface of the samples, rough interface between a low refractive index material (CdO:F, n ∼ 1.6) and a high refractive index material (for Si n ∼ 3.7) results in reduced reflection due to gradual refractive index matching. In order to increase this effect high rms roughness (R q ) values needed. Also this will allow light trapping into Si layer and cause back and forth scattering at the interfaces increasing the optical path within the Si layer. - Abstract: In this work, we report the effect of F doping on some physical properties of CdO films. Ultrasonic spray pyrolysis technique has been used to obtain the films. Thicknesses, refractive indices and extinction coefficients of the films have been determined by spectroscopic ellipsometry technique using Cauchy-Urbach model for fitting. Transmission and reflectance spectra have been taken by UV spectrophotometer, and band gap values have been determined by optical method. X-ray diffraction patterns have been used to study the structural properties such as crystallinity level, texture coefficient, crystallite size and

Effects of cesium ion-implantation on mechanical and electrical properties of organosilicate low-k films

Energy Technology Data Exchange (ETDEWEB)

Li, W.; Pei, D.; Guo, X.; Cheng, M. K.; Lee, S.; Shohet, J. L. [Plasma Processing and Technology Laboratory, Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Lin, Q. [IBM T.J. Watson Research Center, Yorktown Heights, New York 10598 (United States); King, S. W. [Intel Corporation, Hillsboro, Oregon 97124 (United States)

2016-05-16

The effects of cesium (Cs) ion-implantation on uncured plasma-enhanced chemical-vapor-deposited organosilicate low dielectric constant (low-k) (SiCOH) films have been investigated and compared with an ultraviolet (UV) cured film. The mechanical properties, including the elastic modulus and hardness, of the SiCOH low-k films are improved by up to 30% with Cs implantation, and further up to 52% after annealing at 400 °C in a N{sub 2} ambient for 1 h. These improvements are either comparable to or better than the effects of UV-curing. They are attributed to an enhancement of the Si-O-Si network structure. The k-value of the SiCOH films increased slightly after Cs implantation, and increased further after annealing. These increases are attributed to two carbon-loss mechanisms, i.e., the carbon loss due to Si-CH{sub 3} bond breakage from implanted Cs ions, and the carbon loss due to oxidation during the annealing. The time-zero dielectric breakdown strength was improved after the Cs implantation and the annealing, and was better than the UV-cured sample. These results indicate that Cs ion implantation could be a supplement to or a substitution for the currently used UV curing method for processing SiCOH low-k films.

Stabilization of Fermi level via electronic excitation in Sn doped CdO thin films

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Das, Arkaprava; Singh, Fouran

2018-04-01

Pure and Sn doped CdO sol-gel derived thin films were deposited on corning glass substrate and further irradiated by swift heavy ion (SHI) (Ag and O) with fluence upto 3×1013 ions/cm2. The observed tensile stress from X-ray diffraction pattern at higher fluence for Ag ions can be corroborated to the imbrications of cylindrical tracks due to multiple impacts. The anomalous band gap enhancement after irradiation may be attributed to the consolidated effect of Burstein-Moss shift (BMS) and impurity induced virtual gap states (ViGs). At higher excitation density as Fermi stabilization level (EFS) tends to coincide with charge neutrality level (CNL), band gap enhancement saturates as further creation of additional defects inside the lattice becomes unsustainable. Raman spectroscopy divulges an intensity enhancement of 478 cm-1 LO phonon mode with Sn doping and irradiation induces further asymmetric peak broadening due to damage and disordering inside the lattice. However for 3% Sn doped thin film irradiated with Ag ions having 3×1013 fluence shows a drastic change in structural properties and reduction in band gap which might be attributed to the generation of localized energy levels between conduction and valance band due to high density of defects.

Investigation of the optoelectronic behavior of Pb-doped CdO nanostructures

Science.gov (United States)

Eskandari, Abdollah; Jamali-Sheini, Farid; Cheraghizade, Mohsen; Yousefi, Ramin

2018-03-01

Un- and lead (Pb)-doped cadmium oxide (CdO) semiconductor nanostructures were synthesized by a sonochemical method to study their physical properties. The obtained X-ray diffraction (XRD) patterns indicated cubic CdO crystalline structures for all samples and showed that the crystallite size of CdO increases with Pb addition. Scanning electron microscopy (SEM) images of the nanostructures illustrated agglomerated oak-like particles for the Pb-doped CdO nanostructures. Furthermore, optical studies suggested that the emission band gap energy of the CdO nanostructures lies in the range of 2.27-2.38 eV and crystalline defects increase by incorporation of Pb atoms in the CdO crystalline lattice. In addition, electrical experiments declared that the n-type electrical nature of the un- and Pb-doped CdO nanostructures and the minimum of Pb atoms lead to a high carrier concentration.

Synthesis, characterizations and antimicrobial activities of well dispersed ultra-long CdO nanowires

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Sumeet Kumar

2013-05-01

Full Text Available We present a simple, efficient, low cost and template free method for preparation of well dispersed ultra-long (1 μm CdO nanowires. The CdO nanowires were characterized by x-ray diffraction (XRD, Transmission electron microscopy (TEM, UV-visible spectroscopy and Raman measurements. The direct and indirect band gaps were calculated to be 3.5 eV and 2.6 eV, respectively. In the Raman spectra only second order features were observed. The CdO nanowires were used to study antimicrobial activities against B.subtilis and E.coli microbes. It shows antimicrobial activity against B.subtilis and E.coli. However, the antimicrobial activities are better against B.subtilis than that of E.coli.

Brillouin light scattering studies on the mechanical properties of ultrathin, porous low-K dielectric films

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Zhou, Wei; Sooryakumar, R.; King, Sean

2010-03-01

Low K dielectrics have predominantly replaced silicon dioxide as the interlayer dielectric material for interconnects in state of the art integrated circuits. To further reduce interconnect resistance-capacitance (RC) delays, additional reductions in the K for these low-K materials is being pursued by the introduction of controlled levels of porosity. The main challenge for porous low-K dielectrics is the substantial reduction in mechanical properties that is accompanied by the increased pore volume content needed to reduce K. We report on the application of the nondestructive Brillouin light scattering technique to monitor and characterize the mechanical properties of these porous films at thicknesses well below 200 nm that are pertinent to present applications. Observation of longitudinal and transverse standing wave acoustic resonances and the dispersion that accompany their transformation into traveling waves with finite in-plane wave vectors provides for the principal elastic constants that completely characterize the mechanical properties of these porous films. The mode amplitudes of the standing waves, their variation within the film, and the calculated Brillouin intensities account for most aspects of the spectra. The resulting elastic constants are compared with corresponding values obtained from other experimental techniques.

Brillouin light scattering studies of the mechanical properties of ultrathin low-k dielectric films

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Link, A.; Sooryakumar, R.; Bandhu, R. S.; Antonelli, G. A.

2006-07-01

In an effort to reduce RC time delays that accompany decreasing feature sizes, low-k dielectric films are rapidly emerging as potential replacements for silicon dioxide (SiO2) at the interconnect level in integrated circuits. The main challenge in low-k materials is their substantially weaker mechanical properties that accompany the increasing pore volume content needed to reduce k. We show that Brillouin light scattering is an excellent nondestructive technique to monitor and characterize the mechanical properties of these porous films at thicknesses well below 200nm that are pertinent to present applications. Observation of longitudinal and transverse standing wave acoustic resonances and the dispersion that accompany their transformation into traveling waves with finite in-plane wave vectors provides for a direct measure of the principal elastic constants that completely characterize the mechanical properties of these ultrathin films. The mode amplitudes of the standing waves, their variation within the film, and the calculated Brillouin intensities account for most aspects of the spectra. We further show that the values obtained by this method agree well with other experimental techniques such as nanoindentation and picosecond laser ultrasonics.

SIMS studies of low-K materials

International Nuclear Information System (INIS)

Lin Xuefeng; Smith, Stephen P.

2006-01-01

We report progress in conducting quantitative SIMS analyses of low-K materials. Electron-beam (e-beam) pre-irradiation of SIMS measurement sites was used to study the e-beam-induced effects on SIMS depth profiling of a porous organosilicate low-K material. Pre-irradiation of the sample surface using the e-beam causes a reduction in the thickness of the low-K film. SIMS profiling was used to sputter to identifiable marker positions within the pre-irradiated film. Physical measurement of the thickness of the remaining film was used to show that the e-beam-induced reduction in thickness occurs uniformly throughout the pre-irradiated film. Exposure of the film to the e-beam prior to SIMS analysis also resulted in minor changes in the composition of the film. However, pre-irradiation of the film is not part of the normal SIMS measurement procedure. We conclude that when the e-beam irradiation is used only for charge compensation during SIMS depth profiling, the SIMS analysis of the low-K material will not be significantly affected

Detection of methylated CDO1 in plasma of colorectal cancer; a PCR study.

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Keishi Yamashita

Full Text Available BACKGROUND: Cysteine biology is important for the chemosensitivity of cancer cells. Our research has focused on the epigenetic silencing of cysteine dioxygenase type 1 (CDO1 in colorectal cancer (CRC. In this study, we describe detection of CDO1 methylation in the plasma of CRC patients using methylation specific PCR (Q-MSP and extensive analysis of the PCR reaction. METHODS: DNA was extracted from plasma, and analysed for methylation of the CDO1 gene using Q-MSP. The detection rate of CDO1 gene methylation was calculated and compared with that of diluted DNA extracted from "positive control" DLD1 cells. CDO1 gene methylation in the plasma of 40 CRC patients that were clinicopathologically analysed was then determined. RESULTS: (1 The cloned sequence analysis detected 93.3% methylation of the promoter CpG islands of the CDO1 gene of positive control DLD1 cells and 4.7% methylation of the negative control HepG2 CDO1 gene. (2 DLD1 CDO1 DNA could not be detected in this assay if the extracted DNA was diluted ∼1000 fold. The more DNA that was used for the PCR reaction, the more effectively it was amplified in Q-MSP. (3 By increasing the amount of DNA used, methylated CDO1 could be clearly detected in the plasma of 8 (20% of the CRC patients. However, the percentage of CRC patients detected by methylated CDO1 in plasma was lower than that detected by CEA (35.9% or CA19-9 (23.1% in preoperative serum. Combination of CEA/CA19-9 plus plasma methylated CDO1 could increase the rate of detection of curable CRC patients (39.3% as compared to CEA/CA19-9 (25%. CONCLUSION: We have described detection of CDO1 methylation in the plasma of CRC patients. Although CDO1 methylation was not detected as frequently as conventional tumor markers, analysis of plasma CDO1 methylation in combination with CEA/CA19-9 levels increases the detection rate of curable CRC patients.

One dimensional well-aligned CdO nanocrystal by solvothermal method

International Nuclear Information System (INIS)

Kaviyarasu, K.; Manikandan, E.; Paulraj, P.; Mohamed, S.B.; Kennedy, J.

2014-01-01

Graphical abstract: - Highlights: • Cadmium oxide (CdO) emerged as one of the important semiconducting materials. • Iodine concentration increases intensity of the peak around 300 cm −1 becomes stronger. • Surface morphology of these crystals has been modified by varying complexing agent. • Nanofibers structure like CdO crystals first time achieved. • The diameters of these nanofibers range mostly between 40 nm and 70 nm. - Abstract: Cadmium oxide (CdO) is a category of the practical semiconductor metal oxides, which is widely applied in various scientific and industrial fields because of its catalytic, optical, and electrical properties. CdO nanocrystal was successfully synthesized by a virtue of a single source precursor method at mild reaction conditions between cadmium oxide, and element iodine by a solvothermal route. X-ray powder diffraction (XRD), ultraviolet spectroscopy studies (UV–vis), Fourier Transform Infrared analysis (FTIR), scanning electron microscopy (SEM), μ-Raman spectroscopy and cyclic voltammogram (CV) were used to characterize the CdO nanocrystals. The ultra-violet visible absorption peaks of CdO exhibited a large blue shift and the luminescent spectra had a strong and broad emission band centered at 228 nm. The various functional groups present in the CdO nanocrystals were identified by FTIR analysis. Intense PL was also observed with some spectral tuning possibly giving a range of emission photon energies approximately spanning from 2.5 to 3.4 eV. Scanning electron microscopy and μ-Raman microscopy images indicated that the morphology of the product is spherical nanoparticles with an average particle size of 46 nm with standard deviation. The electrochemical response of CdO which is proved the nano-cadmium has high functionality due to the small size and it has higher electrochemical activity without any modifications. The above studies demonstrate the potential for the utilization of cadmium nitrite nanocrystal in visible

Future directions of positron annihilation spectroscopy in low-k dielectric films

International Nuclear Information System (INIS)

Gidley, D.W.; Vallery, R.S.; Liu, M.; Peng, H.G.

2007-01-01

Positronium Annihilation Lifetime Spectroscopy (PALS) has become recognized in the microelectronics industry as one of only several methods capable of quantitatively characterizing engineered nanopores in next-generation (k < 2.2) interlayer dielectric (ILD) thin films. Successes and shortcomings of PALS to date will be assessed and compared with other methods of porosimetry such as ellipsometric and X-ray porosimetries (EP and XRP). A major theme in future low-k research focuses on the ability to integrate porous ILD's into chip fabrication; the vulnerability of porous dielectrics to etching, ashing, and chemical-mechanical polishing in process integration is delaying the introduction of ultra-low-k films. As device size approaches 45 nm the need to probe very small (sub-nanometer), semi-isolated pores beneath thin diffusion barriers is even more challenging. Depth-profiled PALS with its ability to determine a quantitative pore interconnection length and easily resolve 0.3 nm pores beneath diffusion barriers or in trench-patterned dielectrics should have a bright future in porous ILD research. The ability of PALS (and PAS in general) to deduce evolution and growth of pores with porosity should find broad applicability in the emerging field of high performance materials with strategically engineered nanopores. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Mechanical property changes in porous low-k dielectric thin films during processing

Energy Technology Data Exchange (ETDEWEB)

Stan, G., E-mail: gheorghe.stan@nist.gov; Gates, R. S. [Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); Kavuri, P. [Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); Torres, J.; Michalak, D.; Ege, C.; Bielefeld, J.; King, S. W. [Logic Technology Development, Intel Corporation, Hillsboro, Oregon 97124 (United States)

2014-10-13

The design of future generations of Cu-low-k dielectric interconnects with reduced electronic crosstalk often requires engineering materials with an optimal trade off between their dielectric constant and elastic modulus. This is because the benefits associated with the reduction of the dielectric constant by increasing the porosity of materials, for example, can adversely affect their mechanical integrity during processing. By using load-dependent contact-resonance atomic force microscopy, the changes in the elastic modulus of low-k dielectric materials due to processing were accurately measured. These changes were linked to alterations sustained by the structure of low-k dielectric films during processing. A two-phase model was used for quantitative assessments of the elastic modulus changes undergone by the organosilicate skeleton of the structure of porous and pore-filled dielectrics.

Acoustic Phonons and Mechanical Properties of Ultra-Thin Porous Low-k Films: A Surface Brillouin Scattering Study

Science.gov (United States)

Zizka, J.; King, S.; Every, A.; Sooryakumar, R.

2018-04-01

To reduce the RC (resistance-capacitance) time delay of interconnects, a key development of the past 20 years has been the introduction of porous low-k dielectrics to replace the traditional use of SiO2. Moreover, in keeping pace with concomitant reduction in technology nodes, these low-k materials have reached thicknesses below 100 nm wherein the porosity becomes a significant fraction of the film volume. The large degree of porosity not only reduces mechanical strength of the dielectric layer but also renders a need for non-destructive approaches to measure the mechanical properties of such ultra-thin films within device configurations. In this study, surface Brillouin scattering (SBS) is utilized to determine the elastic constants, Poisson's ratio, and Young's modulus of these porous low-k SiOC:H films (˜ 25-250 nm thick) grown on Si substrates by probing surface acoustic phonons and their dispersions.

Synthesis and characterization of CdO nano particles by the sol-gel method

Science.gov (United States)

Vadgama, V. S.; Vyas, R. P.; Jogiya, B. V.; Joshi, M. J.

2017-05-01

Cadmium Oxide (CdO) is an inorganic compound and one of the main precursors to other cadmium compounds. It finds applications in cadmium plating, storage batteries, in transparent conducting film, etc. Here, an attempt is made to synthesize CdO nano particles by sol-gel technique. The gel was prepared using cadmium nitrate tetra hydrate (Cd(NO3)2.4H2O) and aqueous ammonium hydroxide (NH4OH) as a precursor. The synthesized powder is further characterized by techniques like Powder X-ray diffraction (XRD), Transmission electron microscopy (TEM), Fourier transform infrared spectroscopy (FT-IR) and Thermal gravimetric analysis (TGA). Powder XRD analysis suggested the nano-crystalline nature of the sample with the cubic crystal system. Nano scaled particles of spherical morphology with the size ranging from 50-100 nm are observed from TEM images. While, FT-IR study is used to confirm the presence of different functional groups. Thermo-gravimetric analysis suggests the highly thermally stable nature of the samples. The results are discussed.

Structural, electrical and optical studies of SILAR deposited cadmium oxide thin films: Annealing effect

International Nuclear Information System (INIS)

Salunkhe, R.R.; Dhawale, D.S.; Gujar, T.P.; Lokhande, C.D.

2009-01-01

Successive ionic layer adsorption and reaction (SILAR) method has been successfully employed for the deposition of cadmium oxide (CdO) thin films. The films were annealed at 623 K for 2 h in an air and changes in the structural, electrical and optical properties were studied. From the X-ray diffraction patterns, it was found that after annealing, H 2 O vapors from as-deposited Cd(O 2 ) 0.88 (OH) 0.24 were removed and pure cubic cadmium oxide was obtained. The as-deposited film consists of nanocrystalline grains of average diameter about 20-30 nm with uniform coverage of the substrate surface, whereas for the annealed film randomly oriented morphology with slight increase in the crystallite size has been observed. The electrical resistivity showed the semiconducting nature with room temperature electrical resistivity decreased from 10 -2 to 10 -3 Ω cm after annealing. The decrease in the band gap energy from 3.3 to 2.7 eV was observed after the annealing

Characteristics of NaNO3-Promoted CdO as a Midtemperature CO2 Absorbent.

Science.gov (United States)

Kim, Kang-Yeong; Kwak, Jin-Su; An, Young-In; Oh, Kyung-Ryul; Kwon, Young-Uk

2017-06-28

In this study, we explored the reaction system CdO(s) + CO 2 (g) ⇄ CdCO 3 (s) as a model system for CO 2 capture agent in the intermediate temperature range of 300-400 °C. While pure CdO does not react with CO 2 at all up to 500 °C, CdO mixed with an appropriate amount of NaNO 3 (optimal molar ratio NaNO 3 /CdO = 0.14) greatly enhances the conversion of CdO into CdCO 3 up to ∼80% (5.68 mmol/g). These NaNO 3 -promoted CdO absorbents can undergo many cycles of absorption and desorption by temperature swing between 300 and 370 °C under a 100% CO 2 condition. Details of how NaNO 3 promotes the CO 2 absorption of CdO have been delineated through various techniques using thermogravimetry, coupled with X-ray diffraction and electron microscopy. On the basis of the observed data, we propose a mechanism of CO 2 absorption and desorption of NaNO 3 -promoted CdO. The absorption proceeds through a sequence of events of CO 2 adsorption on the CdO surface covered by NaNO 3 , dissolution of so-formed CdCO 3 , and precipitation of CdCO 3 particles in the NaNO 3 medium. The desorption occurs through the decomposition of CdCO 3 in the dissolved state in the NaNO 3 medium where CdO nanoparticles are formed dispersed in the NaNO 3 medium. The CdO nanoparticles are aggregated into micrometer-large particles with smooth surfaces and regular shapes.

Characterization of ITO/CdO/glass thin films evaporated by electron beam technique

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Hussein Abdel-Hafez Mohamed and Hazem Mahmoud Ali

2008-01-01

Full Text Available A thin buffer layer of cadmium oxide (CdO was used to enhance the optical and electrical properties of indium tin oxide (ITO films prepared by an electron-beam evaporation technique. The effects of the thickness and heat treatment of the CdO layer on the structural, optical and electrical properties of ITO films were carried out. It was found that the CdO layer with a thickness of 25 nm results in an optimum transmittance of 70% in the visible region and an optimum resistivity of 5.1×10−3 Ω cm at room temperature. The effect of heat treatment on the CdO buffer layer with a thickness of 25 nm was considered to improve the optoelectronic properties of the formed ITO films. With increasing annealing temperature, the crystallinity of ITO films seemed to improve, enhancing some physical properties, such as film transmittance and conductivity. ITO films deposited onto a CdO buffer layer heated at 450 °C showed a maximum transmittance of 91% in the visible and near-infrared regions of the spectrum associated with the highest optical energy gap of 3.61 eV and electrical resistivity of 4.45×10−4 Ω cm at room temperature. Other optical parameters, such as refractive index, extinction coefficient, dielectric constant, dispersion energy, single effective oscillator energy, packing density and free carrier concentration, were also studied.

Germanium Doping to Improve Carrier Mobility in CdO Films

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A. A. Dakhel

2013-01-01

Full Text Available This investigation addresses the structural, optical, and electrical properties of germanium incorporated cadmium oxide (CdO : Ge thin films. The focus was on the improvement in carrier mobility to achieve high transparency for near-infrared light and low resistivity at the same time. The properties were studied using X-ray diffraction, SEM, spectral photometry, and Hall measurements. All CdO : Ge films were polycrystalline with high texture orientation along [111] direction. It was observed that it is possible to control the carrier concentration ( and mobility ( with Ge-incorporation level. The mobility could be improved to a highest value of  cm2/V·s with Ge doping of 0.25 wt% while maintaining the electrical resistivity as low as  Ω·cm and good transparency % in the NIR spectral region. The results of the present work proved to select Ge as dopant to achieve high carrier mobility with low resistivity for application in transparent conducting oxide (TCO field. Generally, the properties found make CdO : Ge films particularly interesting for the application in optoelectronic devices like thin-film solar cells.

Structural, Optical, and Morphological Properties of the Cadmium Oxide Thin Film Taif S. Almaadhede

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Taif S. Almaadhede

2018-04-01

Full Text Available Cadmium oxide nanoparticles CdO NPS has been prepared by laser ablation in ethanol at 600 pulses and 600 mJ as laser energy. The structural, optical, and morphological properties of the cadmium oxide CdO thin film deposited on a glass substrate have been studied. X-ray diffrac-tometer (XRD 6000, Shimadzu, X-ray, diffractometer with Cukα radiation at a wavelength of ( = 0.154056 nm was utilized to investigate the structural properties of CdO NPs. The optical absorption of colloidal CdO NPs was measured using a spectrophotometer (Cary, 100 cans plus, UV-Vis-NIR, Split Beam Optics, Dual detectors in the range of (200–900 nm. The morpholo-gy of the CdO NPs was investigated by using AFM (AA 3000 Scanning Probe Microscope. The thickness of the films was measured using ellipsometer (Angstrom sun Technologies Ins.

Prognostic Significance of Promoter DNA Hypermethylation of cysteine dioxygenase 1 (CDO1 Gene in Primary Breast Cancer.

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Naoko Minatani

Full Text Available Using pharmacological unmasking microarray, we identified promoter DNA methylation of cysteine dioxygenase 1 (CDO1 gene in human cancer. In this study, we assessed the clinicopathological significance of CDO1 methylation in primary breast cancer (BC with no prior chemotherapy. The CDO1 DNA methylation was quantified by TaqMan methylation specific PCR (Q-MSP in 7 BC cell lines and 172 primary BC patients with no prior chemotherapy. Promoter DNA of the CDO1 gene was hypermethylated in 6 BC cell lines except SK-BR3, and CDO1 gene expression was all silenced at mRNA level in the 7 BC cell lines. Quantification of CDO1 methylation was developed using Q-MSP, and assessed in primary BC. Among the clinicopathologic factors, CDO1 methylation level was not statistically significantly associated with any prognostic factors. The log-rank plot analysis elucidated that the higher methylation the tumors harbored, the poorer prognosis the patients exhibited. Using the median value of 58.0 as a cut-off one, disease specific survival in BC patients with CDO1 hypermethylation showed significantly poorer prognosis than those with hypomethylation (p = 0.004. Multivariate Cox proportional hazards model identified that CDO1 hypermethylation was prognostic factor as well as Ki-67 and hormone receptor status. The most intriguingly, CDO1 hypermethylation was of robust prognostic relevance in triple negative BC (p = 0.007. Promoter DNA methylation of CDO1 gene was robust prognostic indicator in primary BC patients with no prior chemotherapy. Prognostic relevance of the CDO1 promoter DNA methylation is worthy of being paid attention in triple negative BC cancer.

Changes of primary and secondary metabolites in barley plants exposed to CdO nanoparticles

Czech Academy of Sciences Publication Activity Database

Večeřová, Kristýna; Večeřa, Zbyněk; Dočekal, Bohumil; Oravec, Michal; Pompeiano, Antonio; Tříska, Jan; Urban, Otmar

2016-01-01

Roč. 218, NOV (2016), s. 207-218 ISSN 0269-7491 R&D Projects: GA MŠk(CZ) LO1415; GA ČR(CZ) GAP503/11/2315; GA ČR(CZ) GBP503/12/G147; GA MŠk(CZ) LD15039 Institutional support: RVO:67179843 ; RVO:68081715 Keywords : Barley * CdO nanoparticles * Gas chromatography * High performance liquid chromatography * Mass spectrometry * Plant metabolites Subject RIV: EH - Ecology, Behaviour; CB - Analytical Chemistry, Separation (UIACH-O) Impact factor: 5.099, year: 2016

Study optoelectronic properties for polymer composite thick film

Science.gov (United States)

Jobayr, Mahmood Radhi; Al Razak, Ali Hussein Abd; Mahdi, Shatha H.; Fadhil, Rihab Nassr

2018-05-01

Coupling the epoxy with cadmium oxide particles are important for optical properties that may be affected by various mixing proportions. The aim of this experimental study was to evaluate the effect of different mixing proportions on these properties of reinforced epoxy with cadmium oxide particles. The ultrasonic techniques were used to mix and prepared samples of composites. The surfaces topographic of the 50 µm thick reinforced epoxy films were studied using atomic force microscopy (AFM) and microscopy technique (FTIR) Spectroscopy. AFM imaging and quantitative characterization of the films showed that for all samples the root mean square of the surface roughness increases monotonically with increasing the CdO concentrations (from 0% to 15%). The observed effects of CdO concentrations on surface roughness can be explained by two things: the first reason is that the atoms of additives are combined with the original material to form a new compound that is smoother, more homogeneity and smaller in particle size. The second reason is due to high mixing due to ultrasonic mixing. It is clear also, AFM examination of the prepared samples of reinforced epoxy resin shown that topographical contrast and the identification of small structural details critically depend on hardness of epoxy resin, which in turn depended on the ratio of material (CdO) added. We show that the AFM imaging of the films showed that the mean diameter (104.8nm) of films for all of the samples decreased from 135.50 nm to 83.20 nm with the increase of CdO concentrations.

Characteristic analysis on the physical properties of nanostructured Mg-doped CdO thin films—Doping concentration effect

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K. Usharani

2015-06-01

Full Text Available Highly conductive and transparent magnesium-doped cadmium oxide (CdO:Mg thin films have been deposited on suitably cleaned glass substrates maintained at 375 °C by spray pyrolysis technique using perfume atomizer. The magnesium content in the films is varied from 0 to 8 at% in steps of 2 at%. The effect of Mg doping on the structural, morphological, optical and electrical properties of the CdO thin films has been studied. All the films exhibited cubic structure with a preferential orientation along the (1 1 1 plane irrespective of the Mg doping level. SEM analysis showed that the film morphology modifies from spherical shaped grains to closely packed cauliflower shaped nanostructures with Mg doping. Except for the film coated with 2 at% Mg dopant, all the other doped films exhibited a blue shift in the optical band gap. Electrical studies revealed that the CdO:Mg film coated with 8 at% Mg dopant had a minimum resistivity of 0.0853×101 Ω-cm.

CdO Doped Indium Oxide Thick Film as a Low Temperature H2S Gas Sensor

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D. N. CHAVAN

2011-06-01

Full Text Available The thick films of AR grade In2O3 were prepared by standard screen-printing technique. The gas sensing performance of thick film was tested for various gases. It showed maximum gas response to ethanol vapor at 350 oC for 80 ppm. To improve the gas response and selectivity of the film towards a particular gas, In2O3 thick films were modified by dipping them in an aqueous solution of 0.1 M CdCl2 for different intervals of time. The surface modified (10 min In2O3 thick film showed maximum response to H2S gas (10 ppm than pure In2O3 thick film at 150 oC. Cadmium oxide on the surface of the film shifts the gas response from ethanol vapor to H2S gas. A systematic study of sensing performance of the thick films indicates the key role played by cadmium oxide on the surface of thick films. The selectivity, gas response and recovery time of the thick films were measured and presented.

Fabrication of Eu doped CdO [Al/Eu-nCdO/p-Si/Al] photodiodes by perfume atomizer based spray technique for opto-electronic applications

Science.gov (United States)

Ravikumar, M.; Ganesh, V.; Shkir, Mohd; Chandramohan, R.; Arun Kumar, K. Deva; Valanarasu, S.; Kathalingam, A.; AlFaify, S.

2018-05-01

In this study, thin films of cadmium oxide (CdO) with different concentrations (0, 1, 3, and 5 wt%) of Eu doping were deposited onto Si and glass substrates by a novel and facile spray technique using simple perfume atomizer for the first time. Prepared films were characterized for structural, morphological, optical properties and the photo diode studies, using X-ray diffraction, scanning electron microscope, UV-Vis spectrophotometer, Isbnd V characteristics, and fundamental parameters are reported. All the prepared Eu:CdO films exhibit cubic structure. The preferential orientation is along (200) plane. Scanning electron microscopy study indicates the growth of smooth and pin-hole free films with clusters of homogeneous grains. The values of band gap energy are found to be varying from 2.42 to 2.33 eV for various Eu doping concentration from 0 to 5 wt%. EDAX studies revealed the presence of Eu, Cd and O elements without any other impurities. FTIR spectra showed a peak at 575 cm-1 confirming the stretching mode of Cdsbnd O. The resistivity (ρ), high carrier concentration (n) and carrier mobility (μ) for 3 wt% CdO thin film are found to be 0.452 × 10-3(Ω.cm), 17.82 × 1020 cm-3 and 7.757 cm2/V, respectively. Current-voltage measurements on the fabricated nanostructured Al/Eu-nCdO/p-Si/Al heterojunction device showed a non-linear electric characteristics indicating diode like behaviour.

Adhesion study of low-k/Si system using 4-point bending and nanoscratch test

International Nuclear Information System (INIS)

Damayanti, M.; Widodo, J.; Sritharan, T.; Mhaisalkar, S.G.; Lu, W.; Gan, Z.H.; Zeng, K.Y.; Hsia, L.C.

2005-01-01

Chemical vapour deposited (CVD) low-k films using tri-methyl-silane (3MS) and tetra-methyl cyclo-tetra-siloxanes (TMCTS) precursors were studied. A 4-point bend test (4PBT) was performed to assess the adhesion property of the low-k films to Si substrates and the results were compared with that of simpler method, nanoscratch test (NST), as a quality control tool despite its drawbacks. Adhesion energy, G c , of the low-k/Si interface as measured by 4PBT and critical scratch load, P c , as obtained by NST display a linear relationship with hardness and modulus of the low-k film. The lowering of G c as the hardness of the film decreases can be explained by the effects of the C introduction into the Si-O networks found in these films. Lower carbon content for higher hardness films is thought to cause them to be more 'silica-like', and thus, exhibit better adhesion with the Si substrate. Two failure modes were observed for specimens under 4PBT. On one hand, films with low hardness ( c ( 2 ) with an adhesive separation of low-k from the Si substrate. On the other hand, films of high hardness (>5 GPa) display interfacial energies in excess of 10 J/m 2 with delamination of epoxy from the Si substrate, thus, indicating excellent adhesion between the low-k films and Si substrate. For the low hardness films, good correlation exists between P c and G c . However, the two data points of the high hardness films that gave the two highest P c and G c values do not lie on the correlation line drawn for the low hardness film data points due to different factors governing the failure in both tests and a change in the 4PBT failure mechanism

Assessment of the feasible CTA windows for efficient spacing with energy-neutral CDO

OpenAIRE

Dalmau Codina, Ramon; Prats Menéndez, Xavier

2016-01-01

Continuous descent operations (CDO) with con- trolled times of arrival (CTA) at one or several metering fixes could enable environmentally friendly procedures at the same time that terminal airspace capacity is not compromised. This paper focuses on CTA updates once the descent has been already initiated, assessing the feasible CTA window (and associated fuel consumption) of CDO requiring neither thrust nor speed-brake usage alon...

First-principles study of intrinsic defects in CdO

Science.gov (United States)

Zhukov, V. P.; Medvedeva, N. I.; Krasilnikov, V. N.

2018-03-01

Using the density functional theory (DFT) in the GGA and LSDA + U approximations, we studied the effect of cadmium atoms in the interstitial sites and vacancies in the oxygen and cadmium sublattices on the electronic structure of rock-salt cadmium oxide (CdO). Migration of cadmium atoms into interstitial sites was shown to be unlikely. In the presence of oxygen vacancies, the behavior of CdO remains semiconducting and nonmagnetic. Cadmium vacancies induce d0 ferromagnetism and spin-dependent conductivity, which is semiconducting for spin-up electrons and is p-type metallic for spin-down electrons. The formation energies and free energies were calculated for oxygen vacancies and metallic cadmium phase, which allowed an explanation to be offered for the large number of vacancies and the metallic phase formed during reduction in hydrogen atmosphere.

Positron and positronium annihilation in low-dielectric-constant films studied by a pulsed positron beam

International Nuclear Information System (INIS)

Suzuki, R.; Ohdaira, T.; Kobayashi, Y.; Ito, K.; Yu, R.S.; Shioya, Y.; Ichikawa, H.; Hosomi, H.; Ishikiriyama, K.; Shirataki, H.; Matsuno, S.; Xu, J.

2004-01-01

Positron and positronium annihilation in porous low-dielectric-constant (low-k) films deposited by plasma-enhanced chemical vapor deposition (PECVD) and spin-on dielectric (SOD) have been investigated by means of positron annihilation lifetime spectroscopy (PALS) and age-momentum correlation (AMOC) spectroscopy with a pulsed slow positron beam. The ortho-positronium (o-Ps) lifetime strongly depends on the deposition condition. In general, PECVD low-k films have shorter o-Ps lifetimes than SOD low-k films, indicating PECVD low-k films have smaller pores. Since o-Ps diffusion and escaping from the surface occurs in most of porous SOD films, three-gamma annihilation measurement is important. To investigate o-Ps behavior in SOD films, we have carried out two-dimensional (2D) PALS measurement, which measures annihilation time and pulse-height of the scintillation detector simultaneously. Monte-Carlo simulation of the o-Ps diffusion and escaping in porous films has been carried out to simulate the 2D-PALS results. (orig.)

Mechanical characterization of zeolite low dielectric constant thin films by nanoindentation

International Nuclear Information System (INIS)

Johnson, Mark; Li Zijian; Wang Junlan; Ya, Yushan

2007-01-01

With semiconductor technologies continuously pushing the miniaturization limits, there is a growing interest in developing novel low dielectric constant materials to replace the traditional dense SiO 2 insulators. In order to survive the multi-level integration process and provide reliable material and structure for the desired integrated circuits (IC) functions, the new low-k materials have to be mechanically strong and stable. Therefore the material selection and mechanical characterization are vital for the successful development of next generation low-k dielectrics. A new class of low-k materials, nanoporous pure-silica zeolite, is prepared in thin films using IC compatible spin coating process and characterized using depth sensing nanoindentation technique. The elastic modulus of the zeolite thin films is found to be significantly higher than that of other low-k materials with similar porosity and dielectric constants. Correlations between the mechanical, microstructural and electrical properties of the thin films are discussed in detail

Recycling of negative electrodes from spent Ni-Cd batteries as CdO with nanoparticle sizes and its application in remediation of azo dye

Energy Technology Data Exchange (ETDEWEB)

Moreira, T.F.M.; Santana, I.L.; Moura, M.N.; Ferreira, S.A.D.; Lelis, M.F.F.; Freitas, M.B.J.G., E-mail: marcosbj@hotmail.com

2017-07-01

In this study, negative electrodes from spent Ni-Cd batteries were recycled as CdCO{sub 3}, which was thermally treated to produce synthetized, nanostructured CdO. There is interest in CdO because of its energy band gap, high electrical conductivity and selective catalytic properties. CdO was characterized in this study by Fourier transform infrared spectroscopy (FT-IR), X-ray diffraction (XRD) and transmission electronic microscopy (TEM). The XRD pattern showed CdO peaks in a crystalline cubic phase, and the average crystallite diameter was 22.21 nm. TEM micrographs showed the formation of clusters containing nanostructures. We also tested the efficiency of CdO catalytic activity in degrading Reactive Black 5 (RB5) dye. Degradation was conducted in conditions of pH = 4.0, pH = 5.97 and pH = 8.0. The degradation efficiency was, respectively, 65.42%, 61.80% and 67.01% after 480 min of reaction. The determining step in the reaction mechanism for dye degradation was the formation of the radical ion OH·. Therefore, the degradation exhibited a first-order reaction. The catalytic activity of CdO and the rate constant values were independent of the pH of the solution. This work presents potential solutions for two environmental problems: recycling Cd and dye degradation. - Graphical abstract: Recycling of spent Ni-Cd batteries as CdO nanoparticles. - Highlights: • This work presents solutions for Cd recycling and dye degradation. • Anodes of Ni-Cd batteries were recycled as CdO with nanometer-sized particles. • CdO presents catalytic activity in the degradation of reactive black dye. • Decoloration of reactive black dye exhibits first-order reaction. • The rate constant values are independent of the pH solution.

Synthesis, Characterization and Adsorption Capability of CdO Microstructure for Congo Red from Aqueous Solution

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A. Tadjarodi

2012-03-01

Full Text Available Cadmium oxide rhombus-shaped nanostructure was synthesized using hydrothermal process followed by heating treatment. Clearly, X-ray diffraction pattern demonstrated the formation of CdO crystalline phase. Scanning electron microscopy (SEM showed that the obtained rhombus-like structure is composed of nanoparticles with the average size of 29 nm. In addition, we evaluated adsorption of organic dye i.e. Congo red from water using the prepared CdO rhombus like microstructure. UV-visible absorption spectroscopy was used to record the adsorption behavior. It was found that the removal process is performed via electrostatic absorption mechanism. The maximum adsorption capacity of CdO rhombus structures (0.01 g for Congo Red (CR in the concentration range (5-50 mg L-1 studied, as calculated from the Langmuir isotherm model at 25 ˚C and neutral pH, was found to be 41.20 mg g−1 .

Boron-doped cadmium oxide composite structures and their electrochemical measurements

Energy Technology Data Exchange (ETDEWEB)

Lokhande, B.J., E-mail: bjlokhande@yahoo.com [Lab of Smart Mtrls Supercapacitive and Energy Studies, School of Physical Sciences, Solapur University, Solapur 413255, Maharashtra (India); Ambare, R.C. [Lab of Smart Mtrls Supercapacitive and Energy Studies, School of Physical Sciences, Solapur University, Solapur 413255, Maharashtra (India); Mane, R.S. [School of Physical Sciences, Swami Ramanand Teerth Marathwada University, Nanded 431606 (India); Bharadwaj, S.R. [Chemistry Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085 (India)

2013-08-01

Graphical abstract: Conducting nano-fibrous 3% boron doped cadmium oxide thin films were prepared by SILAR and its super capacitive properties were studied. - Highlights: • Samples are of nanofibrous nature. • All samples shows pseudocapacitive behavior. • 3% B doped CdO shows good specific capacitance. • 3% B doped CdO shows maximum 74.93% efficiency at 14 mA/cm{sup 2}. • 3% B doped CdO shows 0.8 Ω internal resistance. - Abstract: Boron-doped and undoped cadmium oxide composite nanostructures in thin film form were prepared onto stainless steel substrates by a successive ionic layer adsorption and reaction method using aqueous solutions of cadmium nitrate, boric acid and 1% H{sub 2}O{sub 2}. As-deposited films were annealed at 623 K for 1 h. The X-ray diffraction study shows crystalline behavior for both doped and undoped films with a porous topography and nano-wires type architecture, as observed in SEM image. Wettability test confirms the hydrophilic surface with 58° contact angle value. Estimated band gap energy is around 1.9 eV. Electrochemical behavior of the deposited films is attempted in 1 M KOH electrolyte using cyclic voltammetry (CV), electrochemical impedance spectroscopy and galvanostatic charge–discharge tests. Maximum values of the specific capacitance, specific energy and specific power obtained for 3% B doped CdO film at 2 mV/s scan rate are 20.05 F/g, 1.22 Wh/kg and 3.25 kW/kg, respectively.

Fabrication and characterization of Ag-Cd/CdO materials produced by incorporation of CdO particles to liquid Ag-Cd alloys; Fabricacion y caracterizacion de materiales Ag-Cd/CdO producidos mediante incorporacion de particulas de CdO en aleaciones Ag-Cd liquidas

Energy Technology Data Exchange (ETDEWEB)

Equihua-Guillen, F.; Ruiz-Mondragon, J.; Servin-Castaneda, R.; Orozco-Gonzalez, P.; Zaldivar-Cadena, A.; Martinez-Villafane, F.; Villarreal-Garza, E. J.

2014-04-01

In the present work it has been investigated the kinetic behavior of internal oxidation processes of strips of Ag-Cd/CdO materials fabricated by adding CdO particles (size of 5 and 20 {mu}m) in liquid Ag-Cd alloys. It has been established the metallurgical mechanism that controls the formation of the thickness covered with CdO particles produced by internal oxidation of the Ag-Cd/CdO material. It has been developed, successfully, a metallographic preparation technique for characterizing the morphology, size and distribution of CdO particles produced by heat treatment of internal oxidation on the surface of each sample based on the distance from the original surface to the boundary of dispersed CdO particles. The material strips were sequentially roughed on its surface and the roughing thickness was measured in the cross section of each new surface to determine the number of particles per area and average particle size. (Author)

A comparative study of the synthesis of CdO nanoplatelets by an albumen-assisted isothermal evaporation method

Energy Technology Data Exchange (ETDEWEB)

Prakash, T., E-mail: prakash_nano@rediffmail.com [Department of Physics, Tamilnadu College of Engineering, Karumathampatti, Coimbatore 641 659, Tamil Nadu (India); Neri, G. [Department of Electronic Engineering, Chemistry and Industrial Engineering, University of Messina, 98166 Messina (Italy); Ranjith Kumar, E. [Sri Ramakrishna Mission Vidyalaya Swami Shivananda Higher Secondary School, Coimbatore 641 020, Tamil Nadu (India)

2015-03-05

Highlights: • CdO nanoplatelets prepared by the presence of albumen as a bio-template agent. • Albumen strongly aided the formation of the pure cadmium phase. • This way to synthesize CdO nanoplatelets very promising for optical application. - Abstract: In this paper, the synthesis of CdO nanoplatelets by the isothermal evaporation method in the presence of egg white (albumen) as a bio-template agent is reported for the first time. The morphological and microstructural characteristics of products obtained after drying at 130 °C and annealing at 300 °C have been investigated by Fourier transform infrared (FT-IR) spectroscopy, Thermogravimetric analysis (TGA), X-ray diffraction (XRD), SEM (Scanning Electron Microscopy), Transmission Electron Microscopy (TEM), Energy Dispersive Spectroscopy (EDS), and compared with corresponding samples obtained in the absence of template. The characterization techniques evidenced remarkable differences between the two sample typologies. Specifically, crystalline CdO in the cubic phase was obtained only in the presence of albumen. The samples were further analyzed by electrical conductivity measurement, ultraviolet spectral studies (UV) and photoluminescence (PL) to ascertain their possible use for optical and electrical applications.

Piezoresistive polysilicon film obtained by low-temperature aluminum-induced crystallization

International Nuclear Information System (INIS)

Patil, Suraj Kumar; Celik-Butler, Zeynep; Butler, Donald P.

2010-01-01

A low-temperature deposition process employing aluminum-induced crystallization has been developed for fabrication of piezoresistive polycrystalline silicon (polysilicon) films on low cost and flexible polyimide substrates for force and pressure sensing applications. To test the piezoresistive properties of the polysilicon films, prototype pressure sensors were fabricated on surface-micromachined silicon nitride (Si 3 N 4 ) diaphragms, in a half-Wheatstone bridge configuration. Characterization of the pressure sensor was performed using atomic force microscope in contact mode with a specially modified probe-tip. Low pressure values ranging from 5 kPa to 45 kPa were achieved by this method. The resistance change was found to be - 0.1% to 0.5% and 0.07% to 0.3% for polysilicon films obtained at 500 o C and 400 o C, respectively, for the applied pressure range.

Towards low-voltage organic thin film transistors (OTFTs with solution-processed high-k dielectric and interface engineering

Directory of Open Access Journals (Sweden)

Yaorong Su

2015-11-01

Full Text Available Although impressive progress has been made in improving the performance of organic thin film transistors (OTFTs, the high operation voltage resulting from the low gate capacitance density of traditional SiO2 remains a severe limitation that hinders OTFTs'development in practical applications. In this regard, developing new materials with high-k characteristics at low cost is of great scientific and technological importance in the area of both academia and industry. Here, we introduce a simple solution-based technique to fabricate high-k metal oxide dielectric system (ATO at low-temperature, which can be used effectively to realize low-voltage operation of OTFTs. On the other hand, it is well known that the properties of the dielectric/semiconductor and electrode/semiconductor interfaces are crucial in controlling the electrical properties of OTFTs. By optimizing the above two interfaces with octadecylphosphonic acid (ODPA self-assembled monolayer (SAM and properly modified low-cost Cu, obviously improved device performance is attained in our low-voltage OTFTs. Further more, organic electronic devices on flexible substrates have attracted much attention due to their low-cost, rollability, large-area processability, and so on. Basing on the above results, outstanding electrical performance is achieved in flexible devices. Our studies demonstrate an effective way to realize low-voltage, high-performance OTFTs at low-cost.

Chemical interaction and adhesion characteristics at the interface of metals (Cu, Ta) and low-k cyclohexane-based plasma polymer (CHexPP) films

International Nuclear Information System (INIS)

Kim, K.J.; Kim, K.S.; Lee, N.-E.; Choi, J.; Jung, D.

2001-01-01

Chemical interaction and adhesion characteristics between metals (Cu, Ta) and low-k plasma-treated cyclohexane-based plasma polymer (CHexPP) films were studied. In order to generate new functional groups that may contribute to the improvement of adhesion between metal and plasma polymer, we performed O 2 , N 2 , and H 2 /He mixture plasma treatment on the surfaces of CHexPP films. Chemical interactions at the interface between metals (Cu, Ta) and plasma-treated CHexPP films were analyzed by x-ray photoelectron spectroscopy. The effect of plasma treatment and thermal annealing on the adhesion characteristics was measured by a tape test and scratch test. The formation of new binding states on the surface of plasma-treated CHexPP films improved adhesion characteristics between metals and CHexPP films. Thermal annealing improves the adhesion property of Cu/CHexPP films, but degrades the adhesion property of Ta/CHexPP films

Aggregation performance of CdO grains grown on surface of N silicon crystal

International Nuclear Information System (INIS)

Zhang Jizhong; Zhao Huan

2010-01-01

Four kinds of aggregation patterns of CdO grains were formed on the surface of N silicon substrate heated at 580 deg. C for 1 h in an evaporation-deposition device. They were ellipse-shaped or quasi-circular-shaped aggregate, long ribbon-shaped aggregate, long chain-shaped or long double-chain-shaped aggregate, and long ellipse-chain-shaped aggregate. These aggregates consisted of numerous grains or tiny crystals, and deposited on top of the CdO bush-like long crystal clusters grown earlier. They exhibited clearly spontaneous self-organization aggregation performance. Surface defects of the virgin N silicon crystal were analyzed, and mechanism of the self-organization aggregation was discussed with a defect induced aggregation (DIA) model.

Highly transparent and conductive double-layer oxide thin films as anodes for organic light-emitting diodes

International Nuclear Information System (INIS)

Yang Yu; Wang Lian; Yan He; Jin Shu; Marks, Tobin J.; Li Shuyou

2006-01-01

Double-layer transparent conducting oxide thin film structures containing In-doped CdO (CIO) and Sn-doped In 2 O 3 (ITO) layers were grown on glass by metal-organic chemical vapor deposition and ion-assisted deposition (IAD), respectively, and used as anodes for polymer light-emitting diodes (PLEDs). These films have a very low overall In content of 16 at. %. For 180-nm-thick CIO/ITO films, the sheet resistance is 5.6 Ω/□, and the average optical transmittance is 87.1% in the 400-700 nm region. The overall figure of merit (Φ=T 10 /R sheet ) of the double-layer CIO/ITO films is significantly greater than that of single-layer CIO, IAD-ITO, and commercial ITO films. CIO/ITO-based PLEDs exhibit comparable or superior device performance versus ITO-based control devices. CIO/ITO materials have a much lower sheet resistance than ITO, rendering them promising low In content electrode materials for large-area optoelectronic devices

The effect of K and Na excess on the ferroelectric and piezoelectric properties of K0.5Na0.5NbO3 thin films

Science.gov (United States)

Ahn, C. W.; Y Lee, S.; Lee, H. J.; Ullah, A.; Bae, J. S.; Jeong, E. D.; Choi, J. S.; Park, B. H.; Kim, I. W.

2009-11-01

We have fabricated K0.5Na0.5NbO3 (KNN) thin films on Pt substrates by a chemical solution deposition method and investigated the effect of K and Na excess (0-30 mol%) on ferroelectric and piezoelectric properties of KNN thin film. It was found that with increasing K and Na excess in a precursor solution from 0 to 30 mol%, the leakage current and ferroelectric properties were strongly affected. KNN thin film synthesized by using 20 mol% K and Na excess precursor solution exhibited a low leakage current density and well saturated ferroelectric P-E hysteresis loops. Moreover, the optimized KNN thin film had good fatigue resistance and a piezoelectric constant of 40 pm V-1, which is comparable to that of polycrystalline PZT thin films.

The effect of K and Na excess on the ferroelectric and piezoelectric properties of K0.5Na0.5NbO3 thin films

International Nuclear Information System (INIS)

Ahn, C W; Bae, J S; Jeong, E D; Lee, S Y; Lee, H J; Ullah, A; Kim, I W; Choi, J S; Park, B H

2009-01-01

We have fabricated K 0.5 Na 0.5 NbO 3 (KNN) thin films on Pt substrates by a chemical solution deposition method and investigated the effect of K and Na excess (0-30 mol%) on ferroelectric and piezoelectric properties of KNN thin film. It was found that with increasing K and Na excess in a precursor solution from 0 to 30 mol%, the leakage current and ferroelectric properties were strongly affected. KNN thin film synthesized by using 20 mol% K and Na excess precursor solution exhibited a low leakage current density and well saturated ferroelectric P-E hysteresis loops. Moreover, the optimized KNN thin film had good fatigue resistance and a piezoelectric constant of 40 pm V -1 , which is comparable to that of polycrystalline PZT thin films.

Characterization of process-induced damage in Cu/low-k interconnect structure by microscopic infrared spectroscopy with polarized infrared light

Energy Technology Data Exchange (ETDEWEB)

Seki, Hirofumi, E-mail: Hirofumi-Seki@trc.toray.co.jp; Hashimoto, Hideki [Toray Research Center, Inc., 3-3-7 Sonoyama, Otsu, Shiga 520-8567 (Japan); Ozaki, Yukihiro [Department of Chemistry, School of Science and Technology, Kwansei Gakuin University, 2-1, Gakuen, Sanda, Hyogo 669-1337 (Japan)

2016-09-07

Microscopic Fourier-transform infrared (FT-IR) spectra are measured for a Cu/low-k interconnect structure using polarized IR light for different widths of low-k spaces and Cu lines, and for different heights of Cu lines, on Si substrates. Although the widths of the Cu line and the low-k space are 70 nm each, considerably smaller than the wavelength of the IR light, the FT-IR spectra of the low-k film were obtained for the Cu/low-k interconnect structure. A suitable method was established for measuring the process-induced damage in a low-k film that was not detected by the TEM-EELS (Transmission Electron Microscope-Electron Energy-Loss Spectroscopy) using microscopic IR polarized light. Based on the IR results, it was presumed that the FT-IR spectra mainly reflect the structural changes in the sidewalls of the low-k films for Cu/low-k interconnect structures, and the mechanism of generating process-induced damage involves the generation of Si-OH groups in the low-k film when the Si-CH{sub 3} bonds break during the fabrication processes. The Si-OH groups attract moisture and the OH peak intensity increases. It was concluded that the increase in the OH groups in the low-k film is a sensitive indicator of low-k damage. We achieved the characterization of the process-induced damage that was not detected by the TEM-EELS and speculated that the proposed method is applicable to interconnects with line and space widths of 70 nm/70 nm and on shorter scales of leading edge devices. The location of process-induced damage and its mechanism for the Cu/low-k interconnect structure were revealed via the measurement method.

CDO1 promoter methylation is associated with gene silencing and is a prognostic biomarker for biochemical recurrence-free survival in prostate cancer patients.

Science.gov (United States)

Meller, Sebastian; Zipfel, Lisa; Gevensleben, Heidrun; Dietrich, Jörn; Ellinger, Jörg; Majores, Michael; Stein, Johannes; Sailer, Verena; Jung, Maria; Kristiansen, Glen; Dietrich, Dimo

2016-12-01

Molecular biomarkers may facilitate the distinction between aggressive and clinically insignificant prostate cancer (PCa), thereby potentially aiding individualized treatment. We analyzed cysteine dioxygenase 1 (CDO1) promoter methylation and mRNA expression in order to evaluate its potential as prognostic biomarker. CDO1 methylation and mRNA expression were determined in cell lines and formalin-fixed paraffin-embedded prostatectomy specimens from a first cohort of 300 PCa patients using methylation-specific qPCR and qRT-PCR. Univariate and multivariate Cox proportional hazards and Kaplan-Meier analyses were performed to evaluate biochemical recurrence (BCR)-free survival. Results were confirmed in an independent second cohort comprising 498 PCa cases. Methylation and mRNA expression data from the second cohort were generated by The Cancer Genome Atlas (TCGA) Research Network by means of Infinium HumanMethylation450 BeadChip and RNASeq. CDO1 was hypermethylated in PCa compared to normal adjacent tissues and benign prostatic hyperplasia (P < 0.001) and was associated with reduced gene expression (ρ = -0.91, P = 0.005). Using two different methodologies for methylation quantification, high CDO1 methylation as continuous variable was associated with BCR in univariate analysis (first cohort: HR = 1.02, P = 0.002, 95% CI [1.01-1.03]; second cohort: HR = 1.02, P = 0.032, 95% CI [1.00-1.03]) but failed to reach statistical significance in multivariate analysis. CDO1 promoter methylation is involved in gene regulation and is a potential prognostic biomarker for BCR-free survival in PCa patients following radical prostatectomy. Further studies are needed to validate CDO1 methylation assays and to evaluate the clinical utility of CDO1 methylation for the management of PCa.

Effect of ultraviolet curing wavelength on low-k dielectric material properties and plasma damage resistance

Energy Technology Data Exchange (ETDEWEB)

Marsik, Premysl, E-mail: marsik@physics.muni.c [UFKL, Masaryk University, Kotlarska 2, 61137 Brno (Czech Republic); IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Urbanowicz, Adam M. [UFKL, Masaryk University, Kotlarska 2, 61137 Brno (Czech Republic); Verdonck, Patrick [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); De Roest, David; Sprey, Hessel [ASM Belgium, Kapeldreef 75, 3001 Leuven (Belgium); Baklanov, Mikhail R. [IMEC, Kapeldreef 75, 3001 Leuven (Belgium)

2011-03-31

A set of SiCOH low dielectric constant films (low-k) has been deposited by plasma enhanced chemical vapor deposition using variable flow rates of the porogen (sacrificial phase) and matrix precursors. During the deposition, two different substrate temperatures and radio frequency power settings were applied. Next, the deposited films were cured by the UV assisted annealing (UV-cure) using two industrial UV light sources: a monochromatic UV source with intensity maximum at {lambda} = 172 nm (lamp A) and a broadband UV source with intensity spectrum distributed below 200 nm (lamp B). This set of various low-k films has been additionally exposed to NH{sub 3} plasma (used for the CuO{sub x} reduction during Cu/low-k integration) in order to evaluate the effect of the film preparation conditions on the plasma damage resistance of low-k material. Results show that the choice of the UV-curing light source has significant impact on the chemical composition of the low-k material and modifies the porogen removal efficiency and subsequently the material porosity. The 172 nm photons from lamp A induce greater changes to most of the evaluated properties, particularly causing undesired removal of Si-CH{sub 3} groups and their replacement with Si-H. The softer broadband radiation from lamp B improves the porogen removal efficiency, leaving less porogen residues detected by spectroscopic ellipsometry in UV range. Furthermore, it was found that the degree of bulk hydrophilization (plasma damage) after NH{sub 3} plasma exposure is driven mainly by the film porosity.

Growth and physical properties of highly oriented La-doped (K,Na)NbO3 ferroelectric thin films

International Nuclear Information System (INIS)

Vendrell, X.; Raymond, O.; Ochoa, D.A.; García, J.E.; Mestres, L.

2015-01-01

Lead-free (K,Na)NbO 3 (KNN) and La doped (K,Na)NbO 3 (KNN-La) thin films are grown on SrTiO 3 substrates using the chemical solution deposition method. The effect of adding different amounts of Na and K excess (0–20 mol%) is investigated. The results confirm the necessity of adding 20 mol% excess amounts of Na and K precursor solutions in order to avoid the formation of the secondary phase, K 4 Nb 6 O 17 , as confirmed by X-ray diffraction and Raman spectroscopy. Moreover, when adding a 20 mol% of alkaline metal excess, the thin films are highly textured with out-of-plane preferential orientation in the [100] direction of the [100] orientation of the substrate. Doping with lanthanum results in a decrease of the leakage current density at low electric field, and an increase in the dielectric permittivity across the whole temperature range (80–380 K). Although the (100)-oriented KNN and KNN-La films exhibited rounded hysteresis loops, at low temperatures the films show the typical ferroelectric hysteresis loops. - Highlights: • (K 0.5 Na 0.5 )NbO 3 and [(K 0.5 Na 0.5 ) 0.985 La 0.005 ]NbO 3 thin films have been prepared. • The obtained thin films show an excellent (100) preferred orientation. • Doping with lanthanum results in a decrease of the leakage current density. • The dielectric properties are enhanced when doping with lanthanum

Structure and oxygen incorporation in low pressure sputtered YBCO films

International Nuclear Information System (INIS)

Chaudhary, S.; Pandya, D. K.; Kashyap, S. C.

2002-01-01

Thin films of YBa 2 Cu 3 O 7- δ (YBCO) have been successfully grown by reactive RF-magnetron sputtering technique at low pressure. The oxygen partial pressure of 0.95 mTorr, a total pressure (argon and oxygen) of 1.9 mTorr, and a substrate temperature of 775 grad C resulted in good quality films with T C (R=0) = 85.3 K and J Cmag (4.2 K) ≅ 2x10 7 A/cm 2 . The incorporation of oxygen in the as-grown films has been controlled by using different ambient - oxygen, air or argon during in-situ cooling. The superconducting behaviour of the films was studied using resistance-temperature and low field ac-susceptibility measurements and correlated with their structure. All the films exhibited metallic conduction in the normal state. The oxygen- and air- cooled films were superconducting, possessing the usual orthorhombic structure. The argon-cooled films were non-superconducting possessing the tetragonal structure, thus implying that the structure of the film during deposition is tetragonal which transforms to either of the oxygen rich orthorhombic-I or -II phases depending upon the oxygen/air ambient. The 'δ' values of 0.14, 0.32 and 0.70 and higher 'c'-parameters of 1.1785, 1.180 and 1.183 nm have been obtained for oxygen, air and argon cooled films respectively. (Authors)

Synthesis, characterizations and anti-bacterial activities of pure and Ag doped CdO nanoparticles by chemical precipitation method.

Science.gov (United States)

Sivakumar, S; Venkatesan, A; Soundhirarajan, P; Khatiwada, Chandra Prasad

2015-02-05

In the present study, synthesized pure and Ag (1%, 2%, and 3%) doped Cadmium Oxide (CdO) nanoparticles by chemical precipitation method. Then, the synthesized products were characterized by thermo gravimetric-differential thermal analysis (TG-DTA), X-ray diffraction (XRD) analysis, Fourier transform infrared (FT-IR) spectroscopy, Ultra violet-Vis diffused reflectance spectroscopy (UV-Vis-DRS), Scanning electron microscopy (SEM), Energy dispersive X-rays (EDX) spectroscopy, and anti-bacterial activities, respectively. The transition temperatures and phase transitions of Cd(OH)2 to CdO at 400°C was confirmed by TG-DTA analysis. The XRD patterns show the cubic shape and average particle sizes are 21, 40, 34, and 37nm, respectively for pure and Ag doped samples. FT-IR study confirmed the presence of CdO and Ag at 677 and 459cm(-1), respectively. UV-Vis-DRS study shows the variation on direct and indirect band gaps. The surface morphologies and elemental analysis have been confirmed from SEM and with EDX. In addition, the synthesized products have been characterized by antibacterial activities against Gram-positive and negative bacteria. Further, the present investigation suggests that CdO nanoparticles have the great potential applications on various industrial and medical fields of research. Copyright © 2014 Elsevier B.V. All rights reserved.

Defects and properties of cadmium oxide based transparent conductors

International Nuclear Information System (INIS)

Yu, Kin Man; Detert, D. M.; Dubon, O. D.; Chen, Guibin; Zhu, Wei; Liu, Chaoping; Grankowska, S.; Hsu, L.; Walukiewicz, Wladek

2016-01-01

Transparent conductors play an increasingly important role in a number of semiconductor technologies. This paper reports on the defects and properties of Cadmium Oxide, a transparent conducting oxide which can be potentially used for full spectrum photovoltaics. We carried out a systematic investigation on the effects of defects in CdO thin films undoped and intentionally doped with In and Ga under different deposition and annealing conditions. We found that at low growth temperatures (<200 °C), sputter deposition tends to trap both oxygen vacancies and compensating defects in the CdO film resulting in materials with high electron concentration of ∼2 × 10 20 /cm 3 and mobility in the range of 40–100 cm 2 /V s. Thermal annealing experiments in different ambients revealed that the dominating defects in sputtered CdO films are oxygen vacancies. Oxygen rich CdO films grown by sputtering with increasing O 2 partial pressure in the sputter gas mixture results in films with resistivity from ∼4 × 10 −4 to >1 Ω cm due to incorporation of excess O in the form of O-related acceptor defects, likely to be O interstitials. Intentional doping with In and Ga donors leads to an increase of both the electron concentration and the mobility. With proper doping CdO films with electron concentration of more than 10 21  cm −3 and electron mobility higher than 120 cm 2 /V s can be achieved. Thermal annealing of doped CdO films in N 2 ambient can further improve the electrical properties by removing native acceptors and improving film crystallinity. Furthermore, the unique doping behavior and electrical properties of CdO were explored via simulations based on the amphoteric defect model. A comparison of the calculations and experimental results show that the formation energy of native donors and acceptors at the Fermi stabilization energy is ∼1 eV and that the mobility of sputtered deposited CdO is limited by a background acceptor concentration of

Defects and properties of cadmium oxide based transparent conductors

Energy Technology Data Exchange (ETDEWEB)

Yu, Kin Man, E-mail: kinmanyu@cityu.edu.hk [Department of Physics and Materials Science, City University of Hong Kong, Kowloon (Hong Kong); Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Detert, D. M.; Dubon, O. D. [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Department of Materials Science and Engineering, University of California, Berkeley, California 94720 (United States); Chen, Guibin [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Physics Department and Jiangsu Key Laboratory for Chemistry of Low Dimensional Materials, Huaiyin Normal University, Jiangsu 223300 (China); Zhu, Wei [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Department of Physics and The Center for Physical Experiments, University of Science and Technology of China, Hefei, Anhui 230026 (China); Liu, Chaoping [Department of Physics and Materials Science, City University of Hong Kong, Kowloon (Hong Kong); Grankowska, S. [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Institute of Experimental Physics (IEP UW), Warsaw University, Warsaw (Poland); Hsu, L. [Department of Postsecondary Teaching and Learning, University of Minnesota, Minneapolis, Minnesota 55455 (United States); Walukiewicz, Wladek [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

2016-05-14

Transparent conductors play an increasingly important role in a number of semiconductor technologies. This paper reports on the defects and properties of Cadmium Oxide, a transparent conducting oxide which can be potentially used for full spectrum photovoltaics. We carried out a systematic investigation on the effects of defects in CdO thin films undoped and intentionally doped with In and Ga under different deposition and annealing conditions. We found that at low growth temperatures (<200 °C), sputter deposition tends to trap both oxygen vacancies and compensating defects in the CdO film resulting in materials with high electron concentration of ∼2 × 10{sup 20}/cm{sup 3} and mobility in the range of 40–100 cm{sup 2}/V s. Thermal annealing experiments in different ambients revealed that the dominating defects in sputtered CdO films are oxygen vacancies. Oxygen rich CdO films grown by sputtering with increasing O{sub 2} partial pressure in the sputter gas mixture results in films with resistivity from ∼4 × 10{sup −4} to >1 Ω cm due to incorporation of excess O in the form of O-related acceptor defects, likely to be O interstitials. Intentional doping with In and Ga donors leads to an increase of both the electron concentration and the mobility. With proper doping CdO films with electron concentration of more than 10{sup 21 }cm{sup −3} and electron mobility higher than 120 cm{sup 2}/V s can be achieved. Thermal annealing of doped CdO films in N{sub 2} ambient can further improve the electrical properties by removing native acceptors and improving film crystallinity. Furthermore, the unique doping behavior and electrical properties of CdO were explored via simulations based on the amphoteric defect model. A comparison of the calculations and experimental results show that the formation energy of native donors and acceptors at the Fermi stabilization energy is ∼1 eV and that the mobility of sputtered deposited CdO is limited

Optical characterisation of thin film cadmium oxide prepared by a ...

African Journals Online (AJOL)

The optical transmission spectra of transparent conducting cadmium oxide (CdO) thin films deposited by a modified reactive evaporation process onto glass substrates have been measured. The interference fringes were used to calculate the refractive index, thickness variation, average thickness and absorption coefficient ...

CdO necklace like nanobeads decorated with PbS nanoparticles: Room temperature LPG sensor

Energy Technology Data Exchange (ETDEWEB)

Sonawane, N.B. [Department of Physics, School of Physical Sciences, North Maharashtra University, Jalgaon, 425001 M.S. (India); K.A.M.P. & N.K.P. Science College, Pimpalner, Sakri, Dhule, M.S. (India); Baviskar, P.K. [Department of Physics, School of Physical Sciences, North Maharashtra University, Jalgaon, 425001 M.S. (India); Ahire, R.R. [S.G. Patil Science, Sakri, Dhule, M.S. (India); Sankapal, B.R., E-mail: brsankapal@gmail.com [Nano Materials and Device Laboratory, Department of Applied Physics, Visvesvaraya National Institute of Technology, South Ambazari Road, Nagpur, 440010 M.S. (India)

2017-04-15

Simple chemical route has been employed to grow interconnected nanobeads of CdO having necklace like structure through air annealing of cadmium hydroxide nanowires. This nanobeads of n-CdO with high surface area has been decorated with p-PbS nanoparticles resulting in the formation of nano-heterojunction which has been utilized effectively as room temperature liquefied petroleum gas (LPG) sensor. The room temperature gas response towards C{sub 2}H{sub 5}OH, Cl{sub 2}, NH{sub 3}, CO{sub 2} and LPG was investigated, among which LPG exhibits significant response. The maximum gas response of 51.10% is achieved with 94.54% stability upon exposure of 1176 ppm concentration of LPG at room temperature (27 °C). The resulting parameters like gas response, response and recovery time along with stability studies has been studied and results are discussed herein. - Highlights: • Conversion of Cd(OH){sub 2} nanowires to CdO nanonecklace by air annealing at 290 °C. • Decoration of PbS nanoparticles over CdO nanobeads by SILAR method. • Formation of n-CdO/p-PbS nano-heterojunction as room temperature LPG sensor. • Maximum gas response of 51.10% with 94.54% stability.

Synchrotron x-ray study of a low roughness and high efficiency K2CsSb photocathode during film growth

International Nuclear Information System (INIS)

Xie, Junqi; Demarteau, Marcel; Wagner, Robert; Schubert, Susanne; Gaowei, Mengjia; Attenkofer, Klaus; Walsh, John; Smedley, John; Ben-Zvi, Ilan; Wong, Jared; Feng, Jun; Padmore, Howard; Ruiz-Oses, Miguel; Ding, Zihao; Liang, Xue; Muller, Erik

2017-01-01

Reduction of roughness to the nm level is critical of achieving the ultimate performance from photocathodes used in high gradient fields. The thrust of this paper is to explore the evolution of roughness during sequential growth, and to show that deposition of multilayer structures consisting of very thin reacted layers results in an nm level smooth photocathode. Synchrotron x-ray methods were applied to study the multi-step growth process of a high efficiency K 2 CsSb photocathode. A transition point of the Sb film grown on Si was observed at the film thickness of ∼40 Å with the substrate temperature at 100 °C and the growth rate at 0.1 Å s −1 . The final K 2 CsSb photocathode exhibits a thickness of around five times that of the total deposited Sb film regardless of how the Sb film was grown. The film surface roughening process occurs first at the step when K diffuses into the crystalline Sb. The photocathode obtained from the multi-step growth exhibits roughness in an order of magnitude lower than the normal sequential process. X-ray diffraction measurements show that the material goes through two structural changes of the crystalline phase during formation, from crystalline Sb to K 3 Sb and finally to K 2 CsSb. (paper)

Nb3Al thin film deposition for low-noise terahertz electronics

International Nuclear Information System (INIS)

Dochev, D; Pavolotsky, A B; Belitsky, V; Olofsson, H

2008-01-01

Higher energy gap superconducting materials were always interesting for low-noise mixer applications such as superconductor-insulator-superconductor tunnel junctions (SIS) and hot-electron bolometer (HEB) used in sub-millimeter and terahertz parts of electro-magnetic spectrum. Here, we report a novel approach for producing Nb 3 Al thin film by co-sputtering from two confocally arranged Nb and Al dc-magnetrons onto substrate heated up to 830 deg. C. Characterization of the deposited films revealed presence of the A15 phase and measured critical temperature was up to 15.7 K with the transition width 0.2-0.3 K for a 300 nm thick film. We measured the film critical magnetic field and studied influence of annealing on the film properties. We have investigated compositional depth profile of the deposited films by spectroscopy of reflected electrons

Ultralow-k nanoporous organosilicate dielectric films imprinted with dendritic spheres.

Science.gov (United States)

Lee, Byeongdu; Park, Young-Hee; Hwang, Yong-Taek; Oh, Weontae; Yoon, Jinhwan; Ree, Moonhor

2005-02-01

Integrated circuits that have improved functionality and speed in a smaller package and that consume less power are desired by the microelectronics industry as well as by end users, to increase device performance and reduce costs. The fabrication of high-performance integrated circuits requires the availability of materials with low or ultralow dielectric constant (low-k: k noise in interconnect conductors, but also minimize power dissipation by reducing the capacitance between the interconnects. Here we describe the preparation of low- and ultralow-k nanoporous organosilicate dielectrics from blends of polymethylsilsesquioxane (PMSSQ) precursor with globular ethyl acrylate-terminated polypropylenimine dendrimers, which act as porogens. These dendrimers are found to mix well with the PMSSQ precursor and after their sacrificial thermal decompositions result in closed, spherical pores of <2.0 nm radius with a very narrow distribution even at high loading. This pore size and distribution are the smallest and the narrowest respectively ever achieved in porous spin-on dielectrics. The method therefore successfully delivers low- and ultralow-k PMSSQ dielectric films that should prove very useful in advanced integrated circuits.

Synthesis and X-ray Powder Structure of a New Pillared Layered Cadmium Phosphonate, Giving Evidence that the Intercalation of Alkylamines into Cd(O(3)PR).H(2)O Is Topotactic.

Science.gov (United States)

Fredoueil, Florence; Massiot, Dominique; Janvier, Pascal; Gingl, Franz; Bujoli-Doeuff, Martine; Evain, Michel; Clearfield, Abraham; Bujoli, Bruno

1999-04-19

A new pillared layered phosphonate, cadmium 2-aminoethylphosphonate, Cd(O(3)PC(2)H(4)NH(2)) (1), has been synthesized, and its structure was solved ab initio from X-ray powder diffraction data and refined by Rietveld methods. Compound 1 is orthorhombic: space group Pna2(1), a = 15.4643(2) Å, b = 5.16512(7) Å, c = 6.27650(8) Å, and Z = 4. Its layer arrangement is similar to that in Cd(O(3)PR).H(2)O, except that the water molecule coordinated to cadmium in Cd(O(3)PR).H(2)O is replaced by the nitrogen atom from the amino ends of the ethyl chains borne by phosphorus of the upper and lower layers. The strong similarity of the IR, (31)P, and (113)Cd NMR data for Cd(O(3)PC(2)H(4)NH(2)) and Cd(O(3)PCH(3)).n-NH(2)C(4)H(9) clearly shows the topotactic character of the intercalation of n-alkylamines in the dehydrated form of Cd(O(3)PR).H(2)O to yield Cd(O(3)PR).n-NH(2)R'.

Low-temperature transport in ultra-thin tungsten films

Energy Technology Data Exchange (ETDEWEB)

Chiatti, Olivio [Neue Materialien, Institut fuer Physik, Humboldt-Univ. Berlin (Germany); London Centre for Nanotechnology, University College London (United Kingdom); Nash, Christopher; Warburton, Paul [London Centre for Nanotechnology, University College London (United Kingdom)

2012-07-01

Tungsten-containing films, fabricated by focused-ion-beam-induced chemical vapour deposition, are known to have an enhanced superconducting transition temperature compared to bulk tungsten, and have been investigated previously for film thickness down to 25 nm. In this work, by using ion-beam doses below 50 pC/{mu}m{sup 2} on a substrate of amorphous silicon, we have grown continuous films with thickness below 20 nm. The electron transport properties were investigated at temperatures down to 350 mK and in magnetic fields up to 3 T, parallel and perpendicular to the films. The films in this work are closer to the limit of two-dimensional systems and are superconducting at low temperatures. Magnetoresistance measurements yield upper critical fields of the order of 1 T, and the resulting coherence length is smaller than the film thickness.

Phosphazene like film formation on InP in liquid ammonia (223 K)

Energy Technology Data Exchange (ETDEWEB)

Gonçalves, A.-M., E-mail: goncalves@chimie.uvsq.fr; Njel, C.; Mathieu, C.; Aureau, D.; Etcheberry, A.

2013-07-01

An anodic photo-galvanostatic treatment at low current density (1 μA·cm{sup −2}) is carried out on n-InP semiconductor in liquid ammonia (223 K). The gradual chemical evolution of the surface is studied as a function of the anodic charge. Proof and reproducibility of the chemical transformation of the surface are clearly evidenced by X-ray photoelectron spectroscopy (XPS) analyses. Like by cyclic voltammetry, the perfect coverage of the InP surface by a thin phosphazene like film is also revealed by XPS data. However, a low anodic charge (≈ 0.5 mC·cm{sup −2}) is required by photo-galvanostatic treatment while a higher anodic charge (≈ 7 mC·cm{sup −2}) is involved by cyclic voltammetry. The excess of charge could be related to ammonia oxidation during the formation of the passivating film. This result proves the electrochemical oxidation of the solvent as a determinant step of the mechanism film formation. - Highlights: ► Cyclic voltammetry and galvanostatic modes on n-InP in liquid ammonia (223 K). ► A thin film growth is reached by photo-anodic polarization. ► The same phosphazene like film is evidenced by X-ray photoelectron spectroscopy. ► An excess of charge is observed by cyclic voltammetry. ► An electrochemical oxidation step of the solvent is assumed.

Preparation and Characterization of K-Carrageenan/Nanosilica Biocomposite Film

Directory of Open Access Journals (Sweden)

Lokesh R. Rane

2014-01-01

Full Text Available The purpose of this study is to improve the performance properties of K-carrageenan (K-CRG by utilizing nanosilica (NSI as the reinforcing agent. The composite films were prepared by solution casting method. NSI was added up to 1.5% in the K-CRG matrix. The prepared films were characterized for mechanical (tensile strength, tensile modulus, and elongation at break, thermal (differential scanning calorimetry, thermogravimetric analysis, barrier (water vapour transmission rate, morphological (scanning electron microscopy, contact angle, and crystallinity properties. Tensile strength, tensile modulus, and crystallinity were found to have increased by 13.8, 15, and 48% whereas water vapour transmission rate was found to have decreased by 48% for 0.5% NSI loaded K-CRG composite films. NSI was found to have formed aggregates for concentrations above 0.5% as confirmed by scanning electron microscopy. Melting temperature, enthalpy of melting, and degradation temperature of K-CRG increased with increase in concentration of NSI in K-CRG. Contact angle also increased with increase in concentration of NSI in K-CRG, indicating the decrease in hydrophilicity of the films improving its water resistance properties. This knowledge of the composite film could make beneficial contributions to the food and pharmaceutical packaging applications.

Photocatalytic degradation effect of malachite green and catalytic hydrogenation by UV-illuminated CeO2/CdO multilayered nanoplatelet arrays: Investigation of antifungal and antimicrobial activities.

Science.gov (United States)

Maria Magdalane, C; Kaviyarasu, K; Judith Vijaya, J; Jayakumar, C; Maaza, M; Jeyaraj, B

2017-04-01

CeO 2 /CdO multi-layered nanoplatelet arrays have been synthesized by sol-gel method at two different temperatures using Citrus limonum fruit extract and the effect of particle size on the photocatalytic performance is studied. The particle size and phases was analysed by X-ray diffraction pattern (XRD) which brought out the formation of cubic phase in the synthesized samples. Field Emission Scanning electron microscopy (FESEM) revealed the surface morphology and made up of cumulative form of platelet shaped arrays with an average size of 10nm. The elemental composition and the purity of the nanomaterials were confirmed by Energy Dispersive X-ray spectroscopy (EDX). CeO 2 /CdO multilayered binary metal oxide nanoplatelet arrays were formed which was further explored with Fourier transform infrared spectroscopy (FTIR), it reveals that the nanocomposites contain CeO and CdO bonds. Determination of the direct and indirect bandgap energy of the nanoplatelet arrays was carried out by UV-Vis-DRS studies. In MG degradation, both the hole (h + ) and hydroxyl radical (OH) played a major role than the superoxide radical (O 2 - ). Possible photo degradation mechanisms are proposed and discussed in this article. CeO 2 /CdO multi-layered nanoplatelet arrays showed antibacterial activity and among the tested ones, it showed better growth inhibition towards P. aeruginosa MTCC73. Thus, this greener synthetic procedure was a highly effective method due to low-cost, highly effective UV light responsive material for environmental safety. Copyright © 2017. Published by Elsevier B.V.

Perovskite oxynitride LaTiOxNy thin films: Dielectric characterization in low and high frequencies

International Nuclear Information System (INIS)

Lu, Y.; Ziani, A.; Le Paven-Thivet, C.; Benzerga, R.; Le Gendre, L.; Fasquelle, D.; Kassem, H.

2011-01-01

Lanthanum titanium oxynitride (LaTiO x N y ) thin films are studied with respect to their dielectric properties in low and high frequencies. Thin films are deposited by radio frequency magnetron sputtering on different substrates. Effects of nitrogen content and crystalline quality on dielectric properties are investigated. In low-frequency range, textured LaTiO x N y thin films deposited on conductive single crystal Nb–STO show a dielectric constant ε′ ≈ 140 with low losses tanδ = 0.012 at 100 kHz. For the LaTiO x N y polycrystalline films deposited on conductive silicon substrates with platinum (Pt/Ti/SiO 2 /Si), the tunability reached up to 57% for a weak electric field of 50 kV/cm. In high-frequency range, epitaxial LaTiO x N y films deposited on MgO substrate present a high dielectric constant with low losses (ε′ ≈ 170, tanδ = 0.011, 12 GHz).

The transformation to cadmium oxide through annealing of cadmium oxide hydroxide deposited by ammonia-free SILAR method and the photocatalytic properties

International Nuclear Information System (INIS)

Chávez Urbiola, I.R.; Ramírez Bon, R.; Vorobiev, Y.V.

2015-01-01

Cadmium oxide-hydroxide films were prepared on glass substrates from aqueous alkaline solution at room temperature which was prepared by a more simple and economic version of chemical bath deposition — SILAR (successive ionic layer adsorption and reaction) method. The films obtained were converted to polycrystalline cadmium oxide by annealing treatment at different temperatures. It was found that the annealing temperature affects the grain size and films' density. The morphology, crystallinity, optical and electrical properties of the material obtained confirms its high quality. Finally its photocatalytical effect on methylene blue colorant was observed and analyzed. We expect that this method of CdO films preparation might be of interest for applications in solar energy converter and photocatalytical reactors. - Highlights: • Original SILAR production of Cd(O_2)_0_._8_8(OH)_0_._2_4 and its conversion to CdO were found. • Crystalline structure of CdO obtained is not different from that in bulk crystals. • The thickness of the film is controlled with the number of cycles. • The CdO and Cd(O_2)_0_._8_8(OH)_0_._2_4 has a similar photocatalytic effect • The properties of the CdO films are influenced by annealing process.

Radiochromic film calibration for low-energy seed brachytherapy dose measurement

Energy Technology Data Exchange (ETDEWEB)

Morrison, Hali, E-mail: hamorris@ualberta.ca; Menon, Geetha; Sloboda, Ron S. [Department of Medical Physics, Cross Cancer Institute, Edmonton, Alberta T6G 1Z2, Canada and Department of Oncology, University of Alberta, Edmonton, Alberta T6G 2R3 (Canada)

2014-07-15

Purpose: Radiochromic film dosimetry is typically performed for high energy photons and moderate doses characterizing external beam radiotherapy (XRT). The purpose of this study was to investigate the accuracy of previously established film calibration procedures used in XRT when applied to low-energy, seed-based brachytherapy at higher doses, and to determine necessary modifications to achieve similar accuracy in absolute dose measurements. Methods: Gafchromic EBT3 film was used to measure radiation doses upwards of 35 Gy from 75 kVp, 200 kVp, 6 MV, and (∼28 keV) I-125 photon sources. For the latter irradiations a custom phantom was built to hold a single I-125 seed. Film pieces were scanned with an Epson 10000XL flatbed scanner and the resulting 48-bit RGB TIFF images were analyzed using both FilmQA Pro software andMATLAB. Calibration curves relating dose and optical density via a rational functional form for all three color channels at each irradiation energy were determined with and without the inclusion of uncertainties in the measured optical densities and dose values. The accuracy of calibration curve variations obtained using piecewise fitting, a reduced film measurement area for I-125 irradiation, and a reduced number of dose levels was also investigated. The energy dependence of the film lot used was also analyzed by calculating normalized optical density values. Results: Slight differences were found in the resulting calibration curves for the various fitting methods used. The accuracy of the calibration curves was found to improve at low doses and worsen at high doses when including uncertainties in optical densities and doses, which may better represent the variability that could be seen in film optical density measurements. When exposing the films to doses > 8 Gy, two-segment piecewise fitting was found to be necessary to achieve similar accuracies in absolute dose measurements as when using smaller dose ranges. When reducing the film measurement

Hall effect of K-doped superconducting thin films

Energy Technology Data Exchange (ETDEWEB)

Son, Eunseon; Lee, Nam Hoon; Kang, Won Nam [Dept. of physics, Sungkyunkwan University, Suwon (Korea, Republic of); Hwang, Tae Jong; Kim, Dong Ho [Dept. of physics, Yeungnam University, Gyeongsan(Korea, Republic of)

2013-09-15

We have studied Hall effect for potassium (K)-doped BaFe{sub 2}As{sub 2}superconducting thin films by analyzing the relation between the longitudinal resistivity (ρ{sub xy}) and the Hall resistivity (ρ{sub xy}). The thin films used in this study were fabricated on Al{sub O3} (000l) substrates by using an ex-situ pulsed laser deposition (PLD) technique under a high-vacuum condition of ∼10{sup -6} Torr. The samples showed the high superconducting transition temperatures (T{sub C}) of ∼40 K. The ρ{sub xx} and ρ{sub xy}the for K-doped BaFeAs{sub 2} thin films were measured by using a physical property measurement system (PPMS) with a temperature sweep (T-sweep) mode at an applied current density of 100 A/cm{sup 2} and at magnetic fields from 0 up to 9 T. We report the T-sweep results of the ρ{sub xx} and the ρ{sub xy} to investigate Hall scaling behavior on the basis of the relation of ρ{sub xy} = A(ρ{sub xy}){sup β}. The ρ{sub xx} values are 3.0 ± 0.2 in the c-axis-oriented K-doped BaFeAs{sub 2} thin films, whereas the thin films with various oriented-directions like a polycrystal showed slightly lower β than that of c-axis-oriented thin films. Interestingly, the β value is decreased with increasing magnetic fields.

Nb{sub 3}Al thin film deposition for low-noise terahertz electronics

Energy Technology Data Exchange (ETDEWEB)

Dochev, D; Pavolotsky, A B; Belitsky, V; Olofsson, H [Group for Advanced Receiver Development and Onsala Space Observatory, Department of Radio- and Space Science, Chalmers University of Technology, SE 412 96 Gothenburg (Sweden)], E-mail: dimitar.dochev@chalmers.se

2008-02-01

Higher energy gap superconducting materials were always interesting for low-noise mixer applications such as superconductor-insulator-superconductor tunnel junctions (SIS) and hot-electron bolometer (HEB) used in sub-millimeter and terahertz parts of electro-magnetic spectrum. Here, we report a novel approach for producing Nb{sub 3}Al thin film by co-sputtering from two confocally arranged Nb and Al dc-magnetrons onto substrate heated up to 830 deg. C. Characterization of the deposited films revealed presence of the A15 phase and measured critical temperature was up to 15.7 K with the transition width 0.2-0.3 K for a 300 nm thick film. We measured the film critical magnetic field and studied influence of annealing on the film properties. We have investigated compositional depth profile of the deposited films by spectroscopy of reflected electrons.

Etching Enhancement Followed by Nitridation on Low-k SiOCH Film in Ar/C5F10O Plasma

Science.gov (United States)

Miyawaki, Yudai; Shibata, Emi; Kondo, Yusuke; Takeda, Keigo; Kondo, Hiroki; Ishikawa, Kenji; Okamoto, Hidekazu; Sekine, Makoto; Hori, Masaru

2013-02-01

The etching rates of low-dielectric-constant (low-k), porous SiOCH (p-SiOCH) films were increased by nitrogen-added Ar/C5F10O plasma etching in dual-frequency (60 MHz/2 MHz)-excited parallel plate capacitively coupled plasma. Previously, perfluoropropyl vinyl ether [C5F10O] provided a very high density of CF3+ ions [Nagai et al.: Jpn. J. Appl. Phys. 45 (2006) 7100]. Surface nitridation on the p-SiOCH surface exposed to Ar/N2 plasma led to the etching of larger amounts of p-SiOCH in Ar/C5F10O plasma, which depended on the formation of bonds such as =C(sp2)=N(sp2)- and -C(sp)≡N(sp).

Low-cost flexible thin-film detector for medical dosimetry applications.

Science.gov (United States)

Zygmanski, P; Abkai, C; Han, Z; Shulevich, Y; Menichelli, D; Hesser, J

2014-03-06

The purpose of this study is to characterize dosimetric properties of thin film photovoltaic sensors as a platform for development of prototype dose verification equipment in radiotherapy. Towards this goal, flexible thin-film sensors of dose with embedded data acquisition electronics and wireless data transmission are prototyped and tested in kV and MV photon beams. Fundamental dosimetric properties are determined in view of a specific application to dose verification in multiple planes or curved surfaces inside a phantom. Uniqueness of the new thin-film sensors consists in their mechanical properties, low-power operation, and low-cost. They are thinner and more flexible than dosimetric films. In principle, each thin-film sensor can be fabricated in any size (mm² - cm² areas) and shape. Individual sensors can be put together in an array of sensors spreading over large areas and yet being light. Photovoltaic mode of charge collection (of electrons and holes) does not require external electric field applied to the sensor, and this implies simplicity of data acquisition electronics and low power operation. The prototype device used for testing consists of several thin film dose sensors, each of about 1.5 cm × 5 cm area, connected to simple readout electronics. Sensitivity of the sensors is determined per unit area and compared to EPID sensitivity, as well as other standard photodiodes. Each sensor independently measures dose and is based on commercially available flexible thin-film aSi photodiodes. Readout electronics consists of an ultra low-power microcontroller, radio frequency transmitter, and a low-noise amplification circuit implemented on a flexible printed circuit board. Detector output is digitized and transmitted wirelessly to an external host computer where it is integrated and processed. A megavoltage medical linear accelerator (Varian Tx) equipped with kilovoltage online imaging system and a Cobalt source are used to irradiate different thin-film

Low-Temperature Solution-Processed Gate Dielectrics for High-Performance Organic Thin Film Transistors

Directory of Open Access Journals (Sweden)

Jaekyun Kim

2015-10-01

Full Text Available A low-temperature solution-processed high-k gate dielectric layer for use in a high-performance solution-processed semiconducting polymer organic thin-film transistor (OTFT was demonstrated. Photochemical activation of sol-gel-derived AlOx films under 150 °C permitted the formation of a dense film with low leakage and relatively high dielectric-permittivity characteristics, which are almost comparable to the results yielded by the conventionally used vacuum deposition and high temperature annealing method. Octadecylphosphonic acid (ODPA self-assembled monolayer (SAM treatment of the AlOx was employed in order to realize high-performance (>0.4 cm2/Vs saturation mobility and low-operation-voltage (<5 V diketopyrrolopyrrole (DPP-based OTFTs on an ultra-thin polyimide film (3-μm thick. Thus, low-temperature photochemically-annealed solution-processed AlOx film with SAM layer is an attractive candidate as a dielectric-layer for use in high-performance organic TFTs operated at low voltages.

Dependence of electrical and optical properties of sol-gel prepared undoped cadmium oxide thin films on annealing temperature

International Nuclear Information System (INIS)

Santos-Cruz, J.; Torres-Delgado, G.; Castanedo-Perez, R.; Jimenez-Sandoval, S.; Jimenez-Sandoval, O.; Zuniga-Romero, C.I.; Marquez Marin, J.; Zelaya-Angel, O.

2005-01-01

The effect of the annealing temperature (T a ) on the optical, electrical and structural properties of the undoped cadmium oxide (CdO) thin films obtained by the sol-gel method, using a simple precursor solution, was studied. All the CdO films annealed in the range from 200 to 450 deg. C are polycrystalline with (111) preferential orientation and present high optical transmission > 85% for wavelengths above 500 nm. The resistivity decreases as T a increases until it reaches a value of 6 x 10 -4 Ω cm for T a 350 deg. C. For higher temperatures the resistivity experiences a slight increase. Images obtained by atomic force microscopy show an evident incremental change of the aggregate size (clusters of grains) as T a increases. The grain size also increases when T a increases as observed in data calculated from X-ray measurements

Low-temperature fabrication of sputtered high-k HfO2 gate dielectric for flexible a-IGZO thin film transistors

Science.gov (United States)

Yao, Rihui; Zheng, Zeke; Xiong, Mei; Zhang, Xiaochen; Li, Xiaoqing; Ning, Honglong; Fang, Zhiqiang; Xie, Weiguang; Lu, Xubing; Peng, Junbiao

2018-03-01

In this work, low temperature fabrication of a sputtered high-k HfO2 gate dielectric for flexible a-IGZO thin film transistors (TFTs) on polyimide substrates was investigated. The effects of Ar-pressure during the sputtering process and then especially the post-annealing treatments at low temperature (≤200 °C) for HfO2 on reducing the density of defects in the bulk and on the surface were systematically studied. X-ray reflectivity, UV-vis and X-ray photoelectron spectroscopy, and micro-wave photoconductivity decay measurements were carried out and indicated that the high quality of optimized HfO2 film and its high dielectric properties contributed to the low concentration of structural defects and shallow localized defects such as oxygen vacancies. As a result, the well-structured HfO2 gate dielectric exhibited a high density of 9.7 g/cm3, a high dielectric constant of 28.5, a wide optical bandgap of 4.75 eV, and relatively low leakage current. The corresponding flexible a-IGZO TFT on polyimide exhibited an optimal device performance with a saturation mobility of 10.3 cm2 V-1 s-1, an Ion/Ioff ratio of 4.3 × 107, a SS value of 0.28 V dec-1, and a threshold voltage (Vth) of 1.1 V, as well as favorable stability under NBS/PBS gate bias and bending stress.

Effect of CHF3 Plasma Treatment on the Characteristics of SiCOH Low-k Film

International Nuclear Information System (INIS)

Xing Zhenyu; Ye Chao; Yuan Jing; Xu Yijun; Ning Zhaoyuan

2009-01-01

The characteristics of SiCOH low dielectric constant film treated by a trifluromethane (CHF 3 ) electron cyclotron resonance (ECR) plasma was investigated. The flat-band voltage V FB and leakage current of the Cu/SiCOH/Si structure, and the hydrophobic property of the SiCOH film were obtained by the measurements of capacitance-voltage, current-voltage and water contact angle. The structures of the SiCOH film were also analyzed by Fourier transform infrared spectroscopy and atomic force microscopy. The CHF 3 plasma treatment of the SiCOH film led to a reduction in both the flat-band voltage V FB shift and leakage current of the Cu/SiCOH/Si structure, a decrease in surface roughness, and a deterioration of the hydrophobic property. The changes in the film's characteristics were related to the formation of Si-F bond, the increase in Si-OH bond, and the C:F deposition at the surface of the SiCOH film.

Influence of Magnetic Field on Electric Charge Transport in Holomiun Thin Films at Low Temperatures

Directory of Open Access Journals (Sweden)

Jan Dudas

2005-01-01

Full Text Available Holmium thin films were prepared by evaporation in ultrahigh vacuum (UHV and high precision electrical resistance measurements were performed on them as well as on holomium bulk sample in the wide temperature range from 4,2 K up to the room temperature. Electric charge transport is profoundly influenced by the magnetic structure at low temperatures and a "knee-like" resistance anomaly was observed near the transportation from paramagnetic state to basal-plane spiral structure in bulk with the Neel temperature TN=128,9 K and below ~ 122 K in thin Ho films in a thickness range from 98 nm to 215 nm. Unexpected resistance minimum at ~ 9 K and a slope´s charge of the R vs. T curve near ~ 170 K was observed in 215 nm thin film. Application of magnetic field parallel to the substrate and thin film plane for temperatures below ~ 150 K caused the decrease of resistence value with increasing magnetic flux density. Increasing suppression of the TN value up to ~ 5 K with increasing flux density value up to 5 T was observed in Ho films. 

Structure of ultrathin Pd films determined by low-energy electron microscopy and diffraction

Energy Technology Data Exchange (ETDEWEB)

Santos, B; De la Figuera, J [Centro de Microanalisis de Materiales, Universidad Autonoma de Madrid, Madrid 28049 (Spain); Puerta, J M; Cerda, J I [Instituto de Ciencia de Materiales, CSIC, Madrid 28049 (Spain); Herranz, T [Instituto de Quimica-Fisica ' Rocasolano' , CSIC, Madrid 28006 (Spain); McCarty, K F [Sandia National Laboratories, Livermore, CA 94550 (United States)], E-mail: benitosantos001@gmail.com

2010-02-15

Palladium (Pd) films have been grown and characterized in situ by low-energy electron diffraction (LEED) and microscopy in two different regimes: ultrathin films 2-6 monolayers (ML) thick on Ru(0001), and {approx}20 ML thick films on both Ru(0001) and W(110). The thinner films are grown at elevated temperature (750 K) and are lattice matched to the Ru(0001) substrate. The thicker films, deposited at room temperature and annealed to 880 K, have a relaxed in-plane lattice spacing. All the films present an fcc stacking sequence as determined by LEED intensity versus energy analysis. In all the films, there is hardly any expansion in the surface-layer interlayer spacing. Two types of twin-related stacking sequences of the Pd layers are found on each substrate. On W(110) the two fcc twin types can occur on a single substrate terrace. On Ru(0001) each substrate terrace has a single twin type and the twin boundaries replicate the substrate steps.

Characterization of spin-on-glass very-low-k polymethylsiloxane with copper metallization

International Nuclear Information System (INIS)

Aw, K.C.; Salim, N.T.; Gao, W.; Li, Z.

2006-01-01

Cu diffusion is one major problem that inhibits low-k dielectric to be integrated with existing fabrication technology effectively. This paper demonstrates the effects of surface modification towards polymethylsiloxane low-k dielectric (LKD 5109) from JSR Micro using gas mixture of H 2 + N 2 plasma in order to improve Cu diffusion barrier. C-V plots indirectly indicated that plasma treatment reduces Cu + ions penetration during Cu deposition using magnetron sputtering. XPS confirmed that short duration (10 to 30 s) of H 2 + N 2 plasma treatment could cause surface densification of LKD 5109 low-k thin film through formation of N-C bonds. However, the negative effect of plasma treatment is the increment of dielectric constant (k) due to possible surface densification

Structural and optical properties of CdO nanostructures prepared by atmospheric-pressure CVD

International Nuclear Information System (INIS)

Terasako, T.; Fujiwara, T.; Nakata, Y.; Yagi, M.; Shirakata, S.

2013-01-01

Cadmium oxide (CdO) nanostructures of various shapes were successfully grown on gold (Au) nanocolloid coated c-plane sapphire substrates by atmospheric-pressure CVD using Cd powder and H 2 O as source materials. CdO nanorods (NRs) exhibited tapered shapes and the degree of the tapering became larger with increasing substrate temperature. One of the possible reasons for the tapering behavior is the competition between the axial growth due to the vapor–liquid–solid (VLS) mechanism and the radial growth due to the vapor–solid (VS) mechanism. The influence of the competition between the two different growth mechanisms was also confirmed on the appearance of “seaweed-like” NRs. Moreover, we cannot neglect the influence of the shrinkage of catalyst particles during the growth process on the tapering behavior. In addition, there is a possibility that the temporal evolution of catalyst particles, such as diffusion, splitting, migration and coalescence, contributes not only to the disappearance of catalyst particles on the tips of the NRs, resulting in the enhancement of the radial growth relative to the axial growth, but also to the formation of nanobelts (NBs) and nanotrees (NTs). Photoacoustic measurements revealed that the absorption edge shifts towards lower energies and the absorption band below the absorption edge becomes larger with increasing T S . This tendency may be due to the increase of intrinsic defects and/or the decrease in residual impurities. - Highlights: ► Various shapes of CdO nanostructures were grown by AP-CVD using Cd and H 2 O. ► This diversity is due to the competition between VLS and VS mechanisms. ► The temporal evolution of Au catalyst particles also contributes to the diversity. ► Photoacoustic spectra were changed, depending on the substrate temperature. ► This is probably related to the intrinsic defects and/or residual impurities

The anomalous low temperature resistivity of thermally evaporated α-Mn thin film

International Nuclear Information System (INIS)

Ampong, F.K.; Boakye, F.; Nkum, R.K.

2010-01-01

Electrical resistivity measurements have been carried out on thermally evaporated α-Mn thin film between 300 and 1.4 K using the van der Pauw four probe technique. The film was grown on a glass substrate held at a temperature of 373 K, in an ambient pressure of 5x10 -6 Torr. The results show a resistance minimum, a notable characteristic of α-Mn but at a (rather high) temperature of 194±1 K. Below the resistivity maximum which corresponds to 70 K, the resistivity drops by only 0.02 μΩm indicating a rather short range magnetic ordering. The low temperature results show a tendency towards saturation of the resistivity as the temperature approaches zero suggesting a Kondo scattering.

The anomalous low temperature resistivity of thermally evaporated alpha-Mn thin film

Energy Technology Data Exchange (ETDEWEB)

Ampong, F.K., E-mail: kampxx@yahoo.co [Department of Physics, Kwame Nkrumah University of Science and Technology, Kumasi (Ghana); Boakye, F.; Nkum, R.K. [Department of Physics, Kwame Nkrumah University of Science and Technology, Kumasi (Ghana)

2010-08-15

Electrical resistivity measurements have been carried out on thermally evaporated alpha-Mn thin film between 300 and 1.4 K using the van der Pauw four probe technique. The film was grown on a glass substrate held at a temperature of 373 K, in an ambient pressure of 5x10{sup -6} Torr. The results show a resistance minimum, a notable characteristic of alpha-Mn but at a (rather high) temperature of 194+-1 K. Below the resistivity maximum which corresponds to 70 K, the resistivity drops by only 0.02 muOMEGAm indicating a rather short range magnetic ordering. The low temperature results show a tendency towards saturation of the resistivity as the temperature approaches zero suggesting a Kondo scattering.

Efficient reduction of graphene oxide film by low temperature heat treatment and its effect on electrical conductivity

Energy Technology Data Exchange (ETDEWEB)

Hu, Xuebing; Chen, Zheng [Jingdezhen Ceramic Institute, Jingdezhen (China). Key Lab. of Inorganic Membrane; Yu, Yun [Shanghai Institute of Ceramics, Shanghai (China). Key Lab. of Inorganic Coating Materials; Zhang, Xiaozhen; Wang, Yongqing; Zhou, Jianer [Jingdezhen Ceramic Institute, Jingdezhen (China). Dept. of Materials Engineering

2018-03-01

Graphene-based conductive films have already attracted great attention due to their unique and outstanding physical properties. In this work, in order to develop a novel, effective method to produce these films with good electrical conductivity, a simple and green method is reported to rapidly and effectively reduce graphene oxide film using a low temperature heat treatment. The reduction of graphene oxide film is verified by XRD, FT-IR and Raman spectroscopy. Compared with graphene oxide film, the obtained reduced graphene oxide film has better electrical conductivity and its sheet resistance decreases from 25.3 kΩ x sq{sup -1} to 3.3 kΩ x sq{sup -1} after the heat treatment from 160 to 230 C. The mechanism of thermal reduction of the graphene oxide film mainly results from the removal of the oxygen-containing functional groups and the structural changes. All these results indicate that the low temperature heat treatment is a suitable and effective method for the reduction of graphene oxide film.

Temperature dependent structural, luminescent and XPS studies of CdO:Ga thin films deposited by spray pyrolysis

International Nuclear Information System (INIS)

Moholkar, A.V.; Agawane, G.L.; Sim, Kyu-Ung; Kwon, Ye-bin; Choi, Doo Sun; Rajpure, K.Y.; Kim, J.H.

2010-01-01

Research highlights: → The CdO:Ga thin films seems an alternative to traditional TCO materials used in photovoltaic applications. This work deals the effect of deposition temperature on sprayed CdO:Ga films with respect to the structural, luminescent and XPS studies. → The crystalline quality of the GCO films improves with deposition temperature. → The oxygen vacancies are responsible for n-type conductivity and green emission. → The minimum resistivity, highest carrier concentration and mobility are 1.9 x 10 -4 Ω cm, 11.7 x 10 21 cm -3 and 27.64 cm 2 V -1 s -1 , respectively. - Abstract: The structural, compositional, photoluminescent and XPS properties of CdO:Ga thin films deposited at temperatures ranging from 275 to 350 o C, using spray pyrolysis are reported. X-ray diffraction characterization of as-deposited GCO thin films reveals that films are of cubic structure with a (2 0 0) preferred orientation. The crystalline quality of the GCO films improves and the grain size increases with deposition temperature. The EDS analyses confirm oxygen deficiency present in the film and are responsible for n-type conductivity. The photoluminescence spectra demonstrated that the green emission peaks of CdO thin films are centered at 482 nm. The relative intensity of these peaks is strongly dependent on the deposition temperature. Oxygen vacancies are dominant luminescent centers for green emission in CdO thin films. The XPS measurement shows the presence of Cd, Ga, O and C elements and confirms that CdO:Ga films are cadmium-rich.

Ta penetration into template-type porous low-k material during atomic layer deposition of TaN

International Nuclear Information System (INIS)

Furuya, Akira; Ohtsuka, Nobuyuki; Misawa, Kaori; Shimada, Miyoko; Ogawa, Shinichi

2005-01-01

Ta penetration into a planar template-type porous low-k film during atomic layer deposition of TaN has been investigated by evaluating relations between Ta penetration and number of deposition cycles, exposure time of Ta precursor per deposition cycle, substrate temperature, and porosity of the porous low-k. The precursors were pentakisdimethylaminotantalum [PDMAT:Ta(N(CH 3 ) 2 ) 5 ] and NH 3 . The porous low-k was a methylsiloxane (MSX) whose pore size in the maximum distribution and porosity of the porous low-k were 0-1.9 nm and 0%-47%. Depth profile of the Ta penetration was measured by transmission electron microscopy and energy dispersive x-ray spectroscopy. The amount of penetrated and the penetration depth depended on the porosity. It was found that the precursors penetrate into the MSX film dominantly by gas phase diffusion through pores connecting from the surface to the inside. Increased surface area of the MSX film due to the pores results in a depletion of precursor at the wafer edge, and that this depletion causes the penetration characteristics at the edge of wafer differ from those at the center of the wafer. Moreover, the thickness required for the pore sealing by additive liner deposition is discussed

Formation of condensed phosphates when heating CdO with NH4H2PO4

International Nuclear Information System (INIS)

Atstinya, L.Zh.; Dindune, A.P.; Konstant, Z.A.

1987-01-01

A study was made on process of CdO thermal condensation with NH 4 H 2 PO 4 depending on the ratio of basic substances and temperature synthesis conditions. It was established that reaction between CdO and NH 4 H 2 PO 4 of pure for analysis grade was initiated when basic mixtures were pounded with a pestle. Heating of cadmium-ammonium triphosphate with products of ammonium dihydrophosphate polycondensation in 330-350 deg C range resulted to CdNH 4 (PO 3 ) 3 formation. Exoeffect on DTA curves corresponded at 540 deg C to formation of α-Cd(PO 3 ) 2 . α-Cd(PO 3 ) 2 → β-Cd(PO 3 ) 2 transition took place at 810 deg C with successive melting of β-Cd(PO 3 ) 2 at 850 deg C, which was supported by the DTA curve and sharp change of the relative electric conductivity

Influence of the ion bombardment of O{sub 2} plasmas on low-k materials

Energy Technology Data Exchange (ETDEWEB)

Verdonck, Patrick, E-mail: verdonck@imec.be [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Samara, Vladimir [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Open University, Materials Engineering, Walton Hall, Milton Keynes MK7 6AA (United Kingdom); Goodyear, Alec [Open University, Materials Engineering, Walton Hall, Milton Keynes MK7 6AA (United Kingdom); Ferchichi, Abdelkarim; Van Besien, Els; Baklanov, Mikhail R. [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Braithwaite, Nicholas [Open University, Department of Physics and Astronomy, Walton Hall, Milton Keynes MK7 6AA (United Kingdom)

2011-10-31

In this study, special tests were devised in order to investigate the influence of ion bombardment on the damage induced in low-k dielectrics by oxygen plasmas. By placing a sample that suffered a lot of ion bombardment and one which suffered little ion bombardment simultaneously in the same plasma, it was possible to verify that ion bombardment in fact helped to protect the low-k film against oxygen plasma induced damage. Exhaustive analyses (ellipsometry, X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, porosimetry, capacitance-voltage (C-V) measurements, water contact angle analysis) show that ion bombardment induced the formation of a denser top layer in the film, which then hampered further penetration of active oxygen species deeper into the bulk. This was further confirmed by other tests combining capacitively and inductively coupled plasmas. Therefore, it was possible to conclude that, at least for these plasmas, ion bombardment may help to reduce plasma induced damage to low-k materials.

Study of porogen removal by atomic hydrogen generated by hot wire chemical vapor deposition for the fabrication of advanced low-k thin films

Energy Technology Data Exchange (ETDEWEB)

Godavarthi, S., E-mail: srinivas@cinvestav.mx [Program of Nanoscience and Nanotechnology, Cinvestav-IPN (Mexico); Universidad Nacional Autonoma de Mexico, Instituto de Ciencias Fisicas, Av. Universidad, Cuernavaca, Morelos (Mexico); Wang, C.; Verdonck, P. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Matsumoto, Y.; Koudriavtsev, I. [Program of Nanoscience and Nanotechnology, Cinvestav-IPN (Mexico); SEES, Electrical Engineering Department, Cinvestav-IPN (Mexico); Dutt, A. [SEES, Electrical Engineering Department, Cinvestav-IPN (Mexico); Tielens, H.; Baklanov, M.R. [imec, Kapeldreef 75, 3001 Leuven (Belgium)

2015-01-30

In order to obtain low-k dielectric films, a subtractive technique, which removes sacrificial porogens from a hydrogenated silicon oxycarbide (SiOC:H) film, has been used successfully by different groups in the past. In this paper, we report on the porogen removal from porogenated SiOC:H films, using a hot wire chemical vapor deposition (HWCVD) equipment. Molecular hydrogen is dissociated into atomic hydrogen by the hot wires and these atoms may successfully remove the hydrocarbon groups from the porogenated SiOC:H films. The temperature of the HWCVD filaments proved to be a determining factor. By Fourier transform infrared spectroscopy, X-ray reflectivity (XRR), secondary ion mass spectrometry (SIMS), ellipsometric porosimetry and capacitance-voltage analyses, it was possible to determine that for temperatures higher than 1700 °C, efficient porogen removal occurred. For temperatures higher than 1800 °C, the presence of OH groups was detected. The dielectric constant was the lowest, 2.28, for the samples processed at a filament temperature of 1800 °C, although porosity measurements showed higher porosity for the films deposited at the higher temperatures. XRR and SIMS analyses indicated densification and Tungsten (W) incorporation at the top few nanometers of the films.

Structural, morphological and optical properties of Na and K dual doped CdS thin film

International Nuclear Information System (INIS)

Mageswari, S.; Dhivya, L.; Palanivel, Balan; Murugan, Ramaswamy

2012-01-01

Highlights: ► Effect of incorporation of Na, K and Na,K dual dopants into CdS thin film was investigated. ► Thin films were prepared by simple chemical bath deposition technique. ► The XRD analysis revealed cubic phase for all the investigated films. ► AFM analysis revealed uniform surface with crack free and densely packed morphology for CdS:Na,K film. ► The band gap value increases for CdS:Na, CdS:K and CdS:Na,K thin films compared to CdS film. - Abstract: CdS, sodium doped CdS (CdS:Na), potassium doped CdS (CdS:K) and sodium and potassium dual doped CdS (CdS:Na,K) thin films were deposited on glass substrate by chemical bath deposition (CBD) technique. Structural, morphological and optical properties of the as-grown films were characterised using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDAX), atomic force microscopy (AFM) and ultraviolet visible (UV–VIS) spectroscopy. The XRD analysis revealed cubic phase for ‘as-deposited’ CdS, CdS:Na, CdS:K and CdS:Na,K dual doped thin films. AFM analysis revealed uniform film surface with crack free and densely packed morphology for CdS:Na,K film. The absorption edge in the optical absorption spectra shifts towards the shorter wavelength for CdS:Na, CdS:K and CdS:Na,K thin films compared to CdS film. The optical band gap of CdS, CdS:Na, CdS:K and CdS:Na,K thin films was found to be 2.31, 2.35, 2.38 and 2.34 eV, respectively.

MOCVD growth of transparent conducting Cd2SnO4 thin films

International Nuclear Information System (INIS)

Metz, A.W.; Poeppelmeier, K.R.; Marks, T.J.; Lane, M.A.; Kannewurt, C.R.

2004-01-01

The first preparation of transparent conducting Cd 2 SnO 4 thin films by a simple MOCVD process is described. As-deposited films using Cd(hfa) 2 (TMEDA) (Figure), at 365 C are found to be highly crystalline with a relatively wide range of grain size of 100-300 nm. XRD indicates a cubic spinel Cd 2 SnO 4 crystal structure and the possible presence of a small amount of CdO. The films exhibit conductivities of 2170 S/cm and a bandgap of 3.3 eV, rivaling those of commercial tin-doped indium oxide. (Abstract Copyright [2004], Wiley Periodicals, Inc.)

Behaviour of Charge Carriers in As-Deposited and Annealed Undoped TCO Films

International Nuclear Information System (INIS)

Zhou Yan-Wen; Wu Fa-Yu; Zheng Chun-Yan

2011-01-01

We examine the structures, cut-off points of transmittance spectra and electric properties of undoped ZnO, SnO 2 and CdO films by scanning electron microscopy, x-ray diffraction, spectrophotometer and Hall-effect measurements, respectively. The films are deposited by using an rf magnetron sputtering system from powder targets in argon and then annealed in vacuum. The structures and properties of the as-deposited films are compared with those of the annealed one. We try to explain the behaviour of charge carriers based on the semiconductor physics theory. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Ultra low-K shrinkage behavior when under electron beam in a scanning electron microscope

Energy Technology Data Exchange (ETDEWEB)

Lorut, F.; Imbert, G. [ST Microelectronics, 850 rue Jean Monnet, 38926 Crolles Cedex (France); Roggero, A. [Centre National d' Etudes Spatiales, 18 Avenue Edouard Belin, 31400 Toulouse (France)

2013-08-28

In this paper, we investigate the tendency of porous low-K dielectrics (also named Ultra Low-K, ULK) behavior to shrink when exposed to the electron beam of a scanning electron microscope. Various experimental electron beam conditions have been used for irradiating ULK thin films, and the resulting shrinkage has been measured through use of an atomic force microscope tool. We report the shrinkage to be a fast, cumulative, and dose dependent effect. Correlation of the shrinkage with incident electron beam energy loss has also been evidenced. The chemical modification of the ULK films within the interaction volume has been demonstrated, with a densification of the layer and a loss of carbon and hydrogen elements being observed.

Synchrotron radiation photoemission spectrum study on K3C60 film

Institute of Scientific and Technical Information of China (English)

李宏年; 徐亚伯; 鲍世宁; 李海洋; 何丕模; 钱海杰; 刘风琴; 奎热西·易卜拉欣

2000-01-01

K3C60 single crystal film was prepared on the cleaved (111) surface of C60 single crystal. Synchrotron radiation angle-resolved photoemission spectra were measured at normal emission with sample temperature at - 150K. Up to four subpeaks of LUMO-derived band were observed. These sub-peaks exhibit distinct energy dispersions which resemble in general the theoretical ones calculated for K3C60 at low temperature with the so-called one-dimensional disordered structure. But there is large deviation of experimental sub-band intervals from the theoretical values. This result is meaningful for the studies of the physical properties of alkali-doped C60 solids, e.g. the mechanism for superconductivity.

Porogen residues detection in optical properties of low-k dielectrics cured by ultraviolet radiation

Energy Technology Data Exchange (ETDEWEB)

Marsik, Premysl, E-mail: marsik@physics.muni.c [UFKL, Masaryk University, Kotlarska 2, 61137 Brno (Czech Republic); IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Verdonck, Patrick [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); De Roest, David [ASM Belgium, Kapeldreef 75, 3001 Leuven (Belgium); Baklanov, Mikhail R. [IMEC, Kapeldreef 75, 3001 Leuven (Belgium)

2010-05-31

The optical properties of low dielectric constant (low-k) films have been determined by variable angle spectroscopic ellipsometry in the range from 2 eV to 9 eV to characterize the process of porogen removal during the UV-cure. The studied carbon doped oxide (SiCOH) porous dielectric films have been prepared by plasma enhanced chemical vapor deposition. The films have been deposited as a composition of a matrix precursor and an organic porogen. After deposition, the films have been cured by thermal annealing and UV irradiation ({lambda} = 172 nm) to remove the porogen and create a porosity of 33%, reaching a dielectric constant of 2.3. The process of porogen decomposition and removal has been studied on series of low-k samples, UV-cured for various times. Additional samples have been prepared by the deposition and curing of the porogen film, without SiCOH matrix, and the matrix material itself, without porogen. The analysis of the optical response of the porous dielectric as a mixture of matrix material, porogen and voids, together with Fourier transform infrared analysis, allows the sensitive detection of the volume of the porogen and indicates the existence of decomposed porogen residues inside the pores, even for long curing time. The variation of the deposition and curing conditions can control the amount of the porogen residues and the final porosity.

Investigation of high- k yttrium copper titanate thin films as alternative gate dielectrics

International Nuclear Information System (INIS)

Monteduro, Anna Grazia; Ameer, Zoobia; Rizzato, Silvia; Martino, Maurizio; Caricato, Anna Paola; Maruccio, Giuseppe; Tasco, Vittorianna; Lekshmi, Indira Chaitanya; Hazarika, Abhijit; Choudhury, Debraj; Sarma, D D

2016-01-01

Nearly amorphous high- k yttrium copper titanate thin films deposited by laser ablation were investigated in both metal–oxide–semiconductor (MOS) and metal–insulator–metal (MIM) junctions in order to assess the potentialities of this material as a gate oxide. The trend of dielectric parameters with film deposition shows a wide tunability for the dielectric constant and AC conductivity, with a remarkably high dielectric constant value of up to 95 for the thick films and conductivity as low as 6  ×  10 −10 S cm −1 for the thin films deposited at high oxygen pressure. The AC conductivity analysis points out a decrease in the conductivity, indicating the formation of a blocking interface layer, probably due to partial oxidation of the thin films during cool-down in an oxygen atmosphere. Topography and surface potential characterizations highlight differences in the thin film microstructure as a function of the deposition conditions; these differences seem to affect their electrical properties. (paper)

Optical study of gamma irradiated sodium metaphosphate glasses containing divalent metal oxide MO (ZnO or CdO

Directory of Open Access Journals (Sweden)

E. Nabhan

Full Text Available Sodium metaphosphate glasses containing divalent metal oxide, ZnO or CdO with composition 50 P2O5 – (50 − x Na2O – x MO (ZnO, or CdO where x = 0, 10, 20 (mol% were prepared by conventional melt method. UV/visible spectroscopy and FTIR spectroscopy are measured before and after exposing to successive gamma irradiation doses (5–80 kGy. The optical absorption spectra results of the samples before irradiation reveal a strong UV absorption band at (∼230 nm which is related to unavoided iron impurities. The effects of gamma irradiation on the optical spectral properties of the various glasses have been compared. From the optical absorption spectral data, the optical band gap is evaluated. The main structural groups and the influence of both divalent metal oxide and gamma irradiation effect on the structural vibrational groups are realized through IR spectroscopy. The FTIR spectra of γ-irradiated samples are characterized by the stability of the number and position for the main characteristic band of phosphate groups. To better understood the structural changes during γ-irradiation, a deconvolution of FTIR spectra in the range 650–1450 cm−1 is made. The FTIR deconvolution results found evidence that, the changes occurring after gamma irradiation have been related to irradiation induced structural defects and compositional changes. Keywords: Sodium metaphosphate glass, UV–visible spectra, IR spectra, Deconvolution, Optical band gap, Gamma ray

Low temperature mechanical dissipation of an ion-beam sputtered silica film

International Nuclear Information System (INIS)

Martin, I W; Craig, K; Bassiri, R; Hough, J; Robie, R; Rowan, S; Nawrodt, R; Schwarz, C; Harry, G; Penn, S; Reid, S

2014-01-01

Thermal noise arising from mechanical dissipation in oxide mirror coatings is an important limit to the sensitivity of future gravitational wave detectors, optical atomic clocks and other precision measurement systems. Here, we present measurements of the temperature dependence of the mechanical dissipation of an ion-beam sputtered silica film between 10 and 300 K. A dissipation peak was observed at 20 K and the low temperature dissipation was found to have significantly different characteristics than observed for bulk silica and silica films deposited by alternative techniques. These results are important for better understanding the underlying mechanisms of mechanical dissipation, and thus thermal noise, in the most commonly-used reflective coatings for precision measurements. (paper)

Single crystalline multi-petal Cd nanoleaves prepared by thermal reduction of CdO

International Nuclear Information System (INIS)

Khan, Waheed S.; Cao, Chuanbao; Aslam, Imran; Ali, Zulfiqar; Butt, Faheem K.; Mahmood, Tariq; Nabi, Ghulam; Ihsan, Ayesha; Usman, Zahid; Rehman, Asma

2013-01-01

Highlights: ► Cd nanoleaves are obtained on abraded Cu substrate by thermal reduction of CdO. ► Vapour solid (VS) growth mechanism governs the formation of Cd nanoleaves (CdNLs). ► PL spectrum for CdNLs exhibits a strong ultraviolet (UV) emission band at 353 nm. ► UV band is attributed to interband radiative recombination under Xe illumination. -- Abstract: Multi-petal cadmium metal nanoleaves with 30–40 nm thickness were fabricated on abraded copper substrate by simple thermal reduction of cadmium oxide (CdO) powder at 1050 °C inside horizontal tube furnace (HTF) under nitrogen gas flow. The structural, compositional and morphological characterizations of the as-prepared cadmium nanoleaves (CdNLs) were performed by X-ray diffraction, energy dispersive X-ray spectroscopy, scanning electron microscopy, high resolution transmission electron microscopy and selected area electron diffraction. Non-catalytic vapour–solid (VS) process based growth mechanism governing the formation of CdNLs has been proposed and discussed briefly. Photoluminescence (PL) spectrum for CdNLs measured at room temperature exhibited a single prominent emission band at 353 nm which may either be ascribed to surface oxidation effects or interband radiative recombination under Xe light illumination.

Single crystalline multi-petal Cd nanoleaves prepared by thermal reduction of CdO

Energy Technology Data Exchange (ETDEWEB)

Khan, Waheed S. [Research Centre of Materials Science, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081 (China); National Institute for Biotechnology and Genetic Engineering (NIBGE), P.O. Box No. 577, Jhang Road, Faisalabad (Pakistan); Cao, Chuanbao, E-mail: cbcao@bit.edu.cn [Research Centre of Materials Science, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081 (China); Aslam, Imran; Ali, Zulfiqar; Butt, Faheem K.; Mahmood, Tariq; Nabi, Ghulam [Research Centre of Materials Science, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081 (China); Ihsan, Ayesha [National Institute for Biotechnology and Genetic Engineering (NIBGE), P.O. Box No. 577, Jhang Road, Faisalabad (Pakistan); Usman, Zahid [Research Centre of Materials Science, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081 (China); Rehman, Asma [National Institute for Biotechnology and Genetic Engineering (NIBGE), P.O. Box No. 577, Jhang Road, Faisalabad (Pakistan)

2013-02-15

Highlights: ► Cd nanoleaves are obtained on abraded Cu substrate by thermal reduction of CdO. ► Vapour solid (VS) growth mechanism governs the formation of Cd nanoleaves (CdNLs). ► PL spectrum for CdNLs exhibits a strong ultraviolet (UV) emission band at 353 nm. ► UV band is attributed to interband radiative recombination under Xe illumination. -- Abstract: Multi-petal cadmium metal nanoleaves with 30–40 nm thickness were fabricated on abraded copper substrate by simple thermal reduction of cadmium oxide (CdO) powder at 1050 °C inside horizontal tube furnace (HTF) under nitrogen gas flow. The structural, compositional and morphological characterizations of the as-prepared cadmium nanoleaves (CdNLs) were performed by X-ray diffraction, energy dispersive X-ray spectroscopy, scanning electron microscopy, high resolution transmission electron microscopy and selected area electron diffraction. Non-catalytic vapour–solid (VS) process based growth mechanism governing the formation of CdNLs has been proposed and discussed briefly. Photoluminescence (PL) spectrum for CdNLs measured at room temperature exhibited a single prominent emission band at 353 nm which may either be ascribed to surface oxidation effects or interband radiative recombination under Xe light illumination.

The transformation to cadmium oxide through annealing of cadmium oxide hydroxide deposited by ammonia-free SILAR method and the photocatalytic properties

Energy Technology Data Exchange (ETDEWEB)

Chávez Urbiola, I.R., E-mail: ichavez@qro.cinvestav.mx; Ramírez Bon, R.; Vorobiev, Y.V.

2015-10-01

Cadmium oxide-hydroxide films were prepared on glass substrates from aqueous alkaline solution at room temperature which was prepared by a more simple and economic version of chemical bath deposition — SILAR (successive ionic layer adsorption and reaction) method. The films obtained were converted to polycrystalline cadmium oxide by annealing treatment at different temperatures. It was found that the annealing temperature affects the grain size and films' density. The morphology, crystallinity, optical and electrical properties of the material obtained confirms its high quality. Finally its photocatalytical effect on methylene blue colorant was observed and analyzed. We expect that this method of CdO films preparation might be of interest for applications in solar energy converter and photocatalytical reactors. - Highlights: • Original SILAR production of Cd(O{sub 2}){sub 0.88}(OH){sub 0.24} and its conversion to CdO were found. • Crystalline structure of CdO obtained is not different from that in bulk crystals. • The thickness of the film is controlled with the number of cycles. • The CdO and Cd(O{sub 2}){sub 0.88}(OH){sub 0.24} has a similar photocatalytic effect • The properties of the CdO films are influenced by annealing process.

Low-energy excitations in amorphous films of silicon and germanium

International Nuclear Information System (INIS)

Liu, X.; Pohl, R.O.

1998-01-01

We present measurements of internal friction and shear modulus of amorphous Si (a-Si) and amorphous Ge (a-Ge) films on double-paddle oscillators at 5500 Hz from 0.5 K up to room temperature. The temperature- independent plateau in internal friction below 10 K, which is common to all amorphous solids, also exists in these films. However, its magnitude is smaller than found for all other amorphous solids studied to date. Furthermore, it depends critically on the deposition methods. For a-Si films, it decreases in the sequence of electron-beam evaporation, sputtering, self-ion implantation, and hot-wire chemical-vapor deposition (HWCVD). Annealing can also reduce the internal friction of the amorphous films considerably. Hydrogenated a-Si with 1 at.% H prepared by HWCVD leads to an internal friction more than two orders of magnitude smaller than observed for all other amorphous solids. The internal friction increases after the hydrogen is removed by effusion. Our results are compared with earlier measurements on a-Si and a-Ge films, none of which had the sensitivity achieved here. The variability of the low-energy tunneling states in the a-Si and a-Ge films may be a consequence of the tetrahedrally bonded covalent continuous random network. The perfection of this network, however, depends critically on the preparation conditions, with hydrogen incorporation playing a particularly important role. copyright 1998 The American Physical Society

Low-temperature electrical transport in B-doped ultrananocrystalline diamond film

International Nuclear Information System (INIS)

Li, Lin; Zhao, Jing; Hu, Zhaosheng; Quan, Baogang; Li, Junjie; Gu, Changzhi

2014-01-01

B-doped ultrananocrystalline diamond (UNCD) films are grown using hot-filament chemical vapor deposition method, and their electrical transport properties varying with temperature are investigated. When the B-doped concentration of UNCD film is low, a step-like increase feature of the resistance is observed with decreasing temperature, reflecting at least three temperature-modified electronic state densities at the Fermi level according to three-dimensional Mott's variable range hopping transport mechanism, which is very different from that of reported B-doped nanodiamond. With increasing B-doped concentration, a superconductive transformation occurs in the UNCD film and the highest transformation temperature of 5.3 K is observed, which is higher than that reported for superconducting nanodiamond films. In addition, the superconducting coherence length is about 0.63 nm, which breaks a reported theoretical and experimental prediction about ultra-nanoscale diamond's superconductivity

Studies on functional polymer films utilizing low energy electron beam

International Nuclear Information System (INIS)

Ando, Masayuki

1992-01-01

Also in adhesives and tackifiers, with the expansion of the fields of application, the required characteristics have become high grade and complex. As one of them, the instantaneous hardening of adhesives can be taken up. In the field of lamination works, the low energy type electron beam accelerators having the linear filament of accelerating voltage below 300 kV were developed in 1970s, and the interest in the development of electron beam-handened adhesives has heightend. The authors have carried out research aiming at heightening the functions of the polymer films obtained by electron beam hardening reaction, and developed the adhesives. In this report, the features of electron beam hardening reaction, the structure and properties of electron beam-hardened polymer films and the molecular design of electron beam-hardened monomer oligomers are described. The feature of electron beam hardening reaction is the cross-linking of high degree as the structure of oligomers is maintained. By controlling the structure at the time of electron beam hardening, the heightening of the functions of electron beam-hardened polymer films is feasible. (K.I.)

Study of PECVD films containing flourine and carbon and diamond like carbon films for ultra low dielectric constant interlayer dielectric applications

Science.gov (United States)

Sundaram, Nandini Ganapathy

Lowering the capacitance of Back-end-of-line (BEOL) structures by decreasing the dielectric permittivity of the interlayer dielectric material in integrated circuits (ICs) lowers device delay times, power consumption and parasitic capacitance. a:C-F films that are thermally stable at 400°C were deposited using tetrafluorocarbon and disilane (5% by volume in Helium) as precursors. The bulk dielectric constant (k) of the film was optimized from 2.0 / 2.2 to 1.8 / 1.91 as-deposited and after heat treatment. Films, with highly promising k-values but discarded for failing to meet shrinkage rate requirements were salvaged by utilizing a novel extended heat treatment scheme. Film properties including chemical bond structure, F/C ratio, refractive index, surface planarity, contact angle, dielectric constant, flatband voltage shift, breakdown field potential and optical energy gap were evaluated by varying process pressure, power, substrate temperature and flow rate ratio (FRR) of processing gases. Both XPS and FTIR results confirmed that the stoichiometry of the ultra-low k (ULK) film is close to that of CF2 with no oxygen. C-V characteristics indicated the presence of negative charges that are either interface trapped charges or bulk charges. Average breakdown field strength was in the range of 2-8 MV/cm while optical energy gap varied between 2.2 eV and 3.4 eV. Irradiation or plasma damage significantly impacts the ability to integrate the film in VSLI circuits. The film was evaluated after exposure to oxygen plasma and HMDS vapors and no change in the FTIR spectra or refractive index was observed. Film is resistant to attack by developers CD 26 and KOH. While the film dissolves in UVN-30 negative resist, it is impermeable to PGDMA. A 12% increase in dielectric constant and a decrease in contact angle from 65° to 47° was observed post e-beam exposure. The modified Gaseous Electronics Conference (mGEC) reference cell was used to deposit DLC films using CH4 and Argon as

Fitting the CDO correlation skew: a tractable structural jump-diffusion model

DEFF Research Database (Denmark)

Willemann, Søren

2007-01-01

We extend a well-known structural jump-diffusion model for credit risk to handle both correlations through diffusion of asset values and common jumps in asset value. Through a simplifying assumption on the default timing and efficient numerical techniques, we develop a semi-analytic framework...... allowing for instantaneous calibration to heterogeneous CDS curves and fast computation of CDO tranche spreads. We calibrate the model to CDX and iTraxx data from February 2007 and achieve a satisfactory fit. To price the senior tranches for both indices, we require a risk-neutral probability of a market...

Perovskite oxynitride LaTiO{sub x}N{sub y} thin films: Dielectric characterization in low and high frequencies

Energy Technology Data Exchange (ETDEWEB)

Lu, Y.; Ziani, A. [Institut d' Electronique et de Telecommunications de Rennes (IETR) UMR-CNRS 6164, groupe ' Antennes et Hyperfrequences' , University of Rennes 1, UEB, IUT Saint Brieuc, 18 rue Henri Wallon, 22004 Saint Brieuc cedex (France); Le Paven-Thivet, C., E-mail: claire.lepaven@univ-rennes1.fr [Institut d' Electronique et de Telecommunications de Rennes (IETR) UMR-CNRS 6164, groupe ' Antennes et Hyperfrequences' , University of Rennes 1, UEB, IUT Saint Brieuc, 18 rue Henri Wallon, 22004 Saint Brieuc cedex (France); Benzerga, R.; Le Gendre, L. [Institut d' Electronique et de Telecommunications de Rennes (IETR) UMR-CNRS 6164, groupe ' Antennes et Hyperfrequences' , University of Rennes 1, UEB, IUT Saint Brieuc, 18 rue Henri Wallon, 22004 Saint Brieuc cedex (France); Fasquelle, D. [Laboratoire d' Etude des Materiaux et des Composants pour l' Electronique (LEMCEL) UPRES-EA 2601, University of Littoral-Cote d' Opale, 50 rue Ferdinand Buisson, F-62228 Calais cedex (France); Kassem, H. [Laboratoire de l' Integration du Materiau au Systeme(IMS) UMR-CNRS 5218, groupe Materiaux, University of Bordeaux 1, 16 avenue Pey-Berland, 33607 Pessac (France); and others

2011-11-01

Lanthanum titanium oxynitride (LaTiO{sub x}N{sub y}) thin films are studied with respect to their dielectric properties in low and high frequencies. Thin films are deposited by radio frequency magnetron sputtering on different substrates. Effects of nitrogen content and crystalline quality on dielectric properties are investigated. In low-frequency range, textured LaTiO{sub x}N{sub y} thin films deposited on conductive single crystal Nb-STO show a dielectric constant {epsilon} Prime Almost-Equal-To 140 with low losses tan{delta} = 0.012 at 100 kHz. For the LaTiO{sub x}N{sub y} polycrystalline films deposited on conductive silicon substrates with platinum (Pt/Ti/SiO{sub 2}/Si), the tunability reached up to 57% for a weak electric field of 50 kV/cm. In high-frequency range, epitaxial LaTiO{sub x}N{sub y} films deposited on MgO substrate present a high dielectric constant with low losses ({epsilon} Prime Almost-Equal-To 170, tan{delta} = 0.011, 12 GHz).

Measurements of Schottky barrier at the low-k SiOC:H/Cu interface using vacuum ultraviolet photoemission spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Guo, X.; Pei, D.; Zheng, H.; Shohet, J. L. [Plasma Processing and Technology Laboratory and Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); King, S. W. [Logic Technology Development, Intel Corporation, Hillsboro, Oregon 97124 (United States); Lin, Y.-H.; Fung, H.-S.; Chen, C.-C. [National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan (China); Nishi, Y. [Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States)

2015-12-07

The band alignment between copper interconnects and their low-k interlayer dielectrics is critical to understanding the fundamental mechanisms involved in electrical leakage in low-k/Cu interconnects. In this work, vacuum-ultraviolet (VUV) photoemission spectroscopy is utilized to determine the potential of the Schottky barrier present at low-k a-SiOC:H/Cu interfaces. By examining the photoemission spectra before and after VUV exposure of a low-k a-SiOC:H (k = 3.3) thin film fabricated by plasma-enhanced chemical-vapor deposition on a polished Cu substrate, it was found that photons with energies of 4.9 eV or greater can deplete accumulated charge in a-SiOC:H films, while VUV photons with energies of 4.7 eV or less, did not have this effect. These critical values were identified to relate the electric potential of the interface barrier between the a-SiOC:H and the Cu layers. Using this method, the Schottky barrier at the low-k a-SiOC:H (k = 3.3)/Cu interface was determined to be 4.8 ± 0.1 eV.

Direct submillimeter absorptivity measurements on epitaxial Ba1-xKxBiO3films at 2K

International Nuclear Information System (INIS)

Miller, D.; Richards, P.L.; Nicol, E.J.; Hellman, E.S.; Hartford, E.H. Jr.; Platt, C.E.; Schweinfurth, R.A.; VanHarlingen, D.J.; Amano, J.

1993-04-01

We have used a bolometric technique to obtain accurate low temperature loss data for epitaxial thin films of Ba 0.6 K 0.4 BiO 3 from 30 to 700 cm -1 . These films were grown on MgO and SrTiO 3 substrates by MBE, off-axis sputtering and laser deposition techniques. All films show a strong absorption onset near the BCS tunneling gap of 3.5k B T c . We have analyzed these data using a Kramers-Kronig transformation and have corrected for finite film thickness effects. Results indicate that the absorption onset is consistent with a superconducting energy gap. Comparison is made with predictions based on strong coupling Eliashberg theory using α 2 F(ω) spectra obtained from the literature. While we are able to fit the overall measured absorptivity, we are unable to fit the structure observed in our data

Corrosion Behavior of Alloy 625 in PbSO4-Pb3O4-PbCl2-ZnO-10 Wt Pct CdO Molten Salt Medium

Science.gov (United States)

Mohammadi Zahrani, E.; Alfantazi, A. M.

2012-08-01

Corrosion behavior and degradation mechanisms of alloy 625 under a 47.288 PbSO4-12.776 Pb3O4-6.844PbCl2-23.108ZnO-10CdO (wt pct) molten salt mixture under air atmosphere were studied at 873 K, 973 K, and 1073 K (600 °C, 700 °C, and 800 °C). Electrochemical impedance spectroscopy (EIS), open circuit potential (OCP) measurements, and potentiodynamic polarization techniques were used to evaluate the degradation mechanisms and characterize the corrosion behavior of the alloy. Morphology, chemical composition, and phase structure of the corrosion products and surface layers of the corroded specimens were studied by scanning electron microscopy/energy-dispersive X-ray (SEM/EDX) and X-ray map analyses. Results confirmed that during the exposure of alloy 625 to the molten salt, chromium was mainly dissolved through an active oxidation process as CrO3, Cr2O3, and CrNbO4, while nickel dissolved only as NiO in the system. Formation of a porous and nonprotective oxide layer with low resistance is responsible for the weak protective properties of the barrier layer at high temperatures of 973 K and 1073 K (700 °C and 800 °C). There were two kinds of attack for INCONEL 625, including general surface corrosion and pitting. Pitting corrosion occurred due to the breakdown of the initial oxide layer by molten salt dissolution of the oxide or oxide cracking.

Surface reactions during low-k etching using H2/N2 plasma

International Nuclear Information System (INIS)

Fukasawa, Masanaga; Tatsumi, Tetsuya; Oshima, Keiji; Nagahata, Kazunori; Uchida, Saburo; Takashima, Seigo; Hori, Masaru; Kamide, Yukihiro

2008-01-01

We investigated the relationship between the hard mask faceting that occurs during organic low-k etching and the ion energy distribution function of a capacitively coupled plasma reactor. We minimized the hard mask faceting by precisely controlling the ion energy. This precise control was obtained by selecting the optimum bottom frequency and bias power. We measured the amount of damage done to a SiOCH film exposed to H 2 /N 2 plasma in order to find the H 2 /N 2 ratio at which the plasma caused the least damage. The amount of moisture uptake by the damaged SiOCH film is the dominant factor controlling the dielectric constant increase (Δk). To suppress Δk, the incident ion species and ion energies have to be precisely controlled. This reduces the number of adsorption sites in the bulk SiOCH and maintains the hydrophobic surface that suppresses water permeation during air exposure

Influence of manganese concentration on the electron magnetic resonance spectrum of Mn{sup 2+} in CdO

Energy Technology Data Exchange (ETDEWEB)

Biasi, R.S. de, E-mail: rsbiasi@ime.eb.b [Departamento de Engenharia Mecanica e de Materiais, Instituto Militar de Engenharia, 22290-270 Rio de Janeiro, RJ (Brazil); Grillo, M.L.N. [Instituto de Fisica, Universidade do Estado do Rio de Janeiro, 20550-013 Rio de Janeiro, RJ (Brazil)

2009-10-19

Electron magnetic resonance spectra of manganese-doped cadmium oxide (CdO) have been studied at room temperature for Mn concentrations between 0.10 and 1.00 mol%. The results suggest that the range of the exchange interaction between Mn{sup 2+} ions is about 0.56 nm.

Preparation of YBa2Cu3O7 films by low pressure MOCVD using liquid solution sources

International Nuclear Information System (INIS)

Weiss, F.; Froehlich, K.; Haase, R.; Labeau, M.; Selbmann, D.; Senateur, J.P.; Thomas, O.

1993-01-01

A hybrid low pressure MOCVD process is described for reproducible preparation of superconducting thin films of YBa 2 Cu 3 O 7 . The process uses a single solution source of Y, Ba, and Cu β-diketonates dissolved in suitable organic solvents. This liquid precursor is atomized using an ultrasonic aerosol generator and transported as small droplets (∼1μm) into a CVD reactor where solvent and precursor are first evaporated before deposition takes place at low pressure on heated substrates in a cold wall geometry. This process allows, with stable evaporation rates for all three precursors, to grow in-situ superconducting films with constant composition from film to film. Thin and thick films with high critical temperatures and critical currents have been obtained (Tc>80K, Jc>10 4 A/cm 2 at 77K in self field) which are highly c-axis oriented. Experimental details of this new process are described and the effects of different process parameters are studied in order to improve the quality of the deposited layers. (orig.)

Fabricación y caracterización de materiales Ag-Cd/CdO producidos mediante incorporación de partículas de CdO en aleaciones Ag-Cd líquidas

Directory of Open Access Journals (Sweden)

Equihua-Guillén, Fabián

2014-03-01

Full Text Available In the present work it has been investigated the kinetic behavior of internal oxidation processes of strips of Ag-Cd/CdO materials fabricated by adding CdO particles (size of 5 and 20 μm in liquid Ag-Cd alloys. It has been established the metallurgical mechanism that controls the formation of the thickness covered with CdO particles produced by internal oxidation of the Ag-Cd/CdO material. It has been developed, successfully, a metallographic preparation technique for characterizing the morphology, size and distribution of CdO particles produced by heat treatment of internal oxidation on the surface of each sample based on the distance from the original surface to the boundary of dispersed CdO particles. The material strips were sequentially roughed on its surface and the roughing thickness was measured in the cross section of each new surface to determine the number of particles per area and average particle size.En el presente trabajo se investigó el comportamiento cinético del proceso de oxidación interna de láminas del material Ag-Cd/CdO fabricado mediante adición de partículas de CdO con tamaño de 5 y 20 μm en aleaciones Ag-Cd en estado líquido. Se ha establecido el mecanismo metalúrgico que controla la formación del espesor cubierto con partículas de CdO producido por oxidación interna del material Ag-Cd/CdO. Se desarrolló con éxito una técnica de preparación metalográfica para caracterizar el tamaño y distribución de partículas de CdO producidas por oxidación interna sobre la superficie de cada lámina en función de la distancia a partir de la superficie original hasta el límite de partículas de CdO dispersas. Las placas del material fueron desbastadas secuencialmente sobre su superficie y se midió el espesor desbastado en la sección transversal de cada nueva superficie para determinar el número de partículas por unidad de área y el tamaño promedio de partícula.

Optoelectronic and low temperature thermoelectric studies on nanostructured thin films of silver gallium selenide

Science.gov (United States)

Jacob, Rajani; Philip, Rachel Reena; Nazer, Sheeba; Abraham, Anitha; Nair, Sinitha B.; Pradeep, B.; Urmila, K. S.; Okram, G. S.

2014-01-01

Polycrystalline thin films of silver gallium selenide were deposited on ultrasonically cleaned soda lime glass substrates by multi-source vacuum co-evaporation technique. The structural analysis done by X-ray diffraction ascertained the formation of nano structured tetragonal chalcopyrite thin films. The compound formation was confirmed by X-ray photo-electron spectroscopy. Atomic force microscopic technique has been used for surface morphological analysis. Direct allowed band gap ˜1.78eV with high absorption coefficient ˜106/m was estimated from absorbance spectra. Low temperature thermoelectric effects has been investigated in the temperature range 80-330K which manifested an unusual increase in Seebeck coefficient with negligible phonon drag toward the very low and room temperature regime. The electrical resistivity of these n-type films was assessed to be ˜2.6Ωm and the films showed good photo response.

Effects of plasma and vacuum-ultraviolet exposure on the mechanical properties of low-k porous organosilicate glass

Science.gov (United States)

X. Guo; J.E. Jakes; S. Banna; Y. Nishi; J.L. Shohet

2014-01-01

The effects of plasma exposure and vacuum-ultraviolet (VUV) irradiation on the mechanical properties of low-k porous organosilicate glass (SiCOH) dielectric films were investigated. Nanoindentation measurements were made on SiCOH films before and after exposure to an electron-cyclotron-resonance plasma or a monochromatic synchrotron VUV beam, to determine the changes...

Newtech - Comparison of three 1 kW thin-film solar cell installations; Newtech. Vergleich 3 x 1 kWp Duennschichtzellenanlagen

Energy Technology Data Exchange (ETDEWEB)

Renken, C.; Haeberlin, H.

2003-07-01

This final report for the Swiss Federal Office of Energy (SFOE) presents the results of tests made on 3 types of thin-film solar cells by the photovoltaics laboratory at the University of Applied Science in Burgdorf, Switzerland. The three 1-kW{sub p} installations are all mounted on the flat roof of an industrial building and deliver the power produced to the local electricity utility. The thin-film technologies tested are described. These include copper-indium-diselenide (CIS) cells, amorphous silicon tandem cells and amorphous silicon triple cells. The measurement equipment used is described and the results obtained are discussed. These showed that the CIS cells had the highest annual specific yield and that the triple cells had a relatively high performance ratio at low irradiance levels. The performance of the thin-film modules is also compared to that of conventional, crystalline modules installed at a nearby location.

Low-cost, highly transparent flexible low-e coating film to enable electrochromic windows with increased energy savings

Energy Technology Data Exchange (ETDEWEB)

Berland, Brian [ITN Energy Systems, Inc., Littleton, CO (United States); Hollingsworth, Russell [ITN Energy Systems, Inc., Littleton, CO (United States)

2015-03-31

Five Quads of energy are lost through windows annually in the U.S. Low-e coatings are increasingly employed to reduce the wasted energy. Most commonly, the low-e coating is an oxide material applied directly to the glass at high temperature. With over 100,000,000 existing homes, a retrofit product is crucial to achieve widespread energy savings. Low-e films, i.e. coatings on polymeric substrates, are now also available to meet this need. However, the traditional oxide materials and process is incompatible with low temperature plastics. Alternate high performing low-e films typically incorporate materials that limit visible transmission to 35% or less. Further, the cost is high. The objective of this award was to develop a retrofit, integrated low-e/electrochromic window film to dramatically reduce energy lost through windows. While field testing of state-of-the-art electrochromic (EC) windows show the energy savings are maximized if a low-e coating is used in conjunction with the EC, available low-e films have a low visible transmission (~70% or less) that limits the achievable clear state and therefore, appearance and energy savings potential. Comprehensive energy savings models were completed at Lawrence Berkeley National Lab (LBNL). A parametric approach was used to project energy usage for windows with a large range of low-e properties across all U.S. climate zones, without limiting the study to materials that had already been produced commercially or made in a lab. The model enables projection of energy savings for low-e films as well as integrated low-e/EC products. This project developed a novel low-e film, optimized for compatibility with EC windows, using low temperature, high deposition rate processes for the growth of low-e coatings on plastic films by microwave plasma enhanced chemical vapor deposition. Silica films with good density and optical properties were demonstrated at deposition rates as high as 130Å/sec. A simple bi-layer low-e stack of

The effect of Na on Cu-K-In-Se thin film growth

Science.gov (United States)

Muzzillo, Christopher P.; Tong, Ho Ming; Anderson, Timothy J.

2018-04-01

Co-evaporation of Cu-KF-In-Se was performed on substrates with varied Na supply. Compositions of interest for photovoltaic absorbers were studied, with ratios of (K + Cu)/In ∼ 0.85 and K/(K + Cu) ∼ 0-0.57. Bare soda-lime glass (SLG) substrates had the highest Na supply as measured by secondary ion mass spectrometry, while SLG/Mo and SLG/SiO2/Mo substrates led to 3x and 3000x less Na in the growing film, respectively. Increased Na supply favored Cu1-xKxInSe2 (CKIS) alloy formation as proven by X-ray diffraction (XRD), while decreased Na supply favored the formation of CuInSe2 + KInSe2 mixed-phase films. Scanning electron microscopy and energy dispersive X-ray spectroscopy revealed the KInSe2 precipitates to be readily recognizable planar crystals. Extrinsic KF addition during film growth promoted diffusion of Na out from the various substrates and into the growing film, in agreement with previous reports. Time-resolved photoluminescence showed enhanced minority carrier lifetimes for films with moderate K compositions (0.04 interdependency can be used to engineer alkali metal bonding in Cu(In,Ga)(Se,S)2 absorbers to optimize both initial and long-term photovoltaic power generation.

Comparison of stress-induced voiding phenomena in copper line–via structures with different dielectric materials

International Nuclear Information System (INIS)

Hou, Yuejin; Tan, Cher Ming

2009-01-01

The package level stress-induced voiding (SIV) test of Cu dual-damascene line–via structures is performed. Two different dielectrics, undoped silica glass (USG) and carbon doped oxide (CDO), are used in this work. After 1344 h of high temperature storage test, the resistance drift of USG interconnects is found to be much smaller than that of CDO interconnects and voids are located at the bottom of the via for both USG and CDO interconnects. However, horizontal voids grown along the via bottom is observed for USG interconnects, whilst voids are found to grow vertically along the via sidewall for CDO interconnects. The phenomena are explained using finite element analysis in this work, and the observed poor SIV performance for CDO interconnects is also explained. With this finite element analysis, the implications of different low-k dielectrics on SIV reliability are discussed

Optoelectronic and low temperature thermoelectric studies on nanostructured thin films of silver gallium selenide

International Nuclear Information System (INIS)

Jacob, Rajani; Philip, Rachel Reena; Nazer, Sheeba; Abraham, Anitha; Nair, Sinitha B.; Pradeep, B.; Urmila, K. S.; Okram, G. S.

2014-01-01

Polycrystalline thin films of silver gallium selenide were deposited on ultrasonically cleaned soda lime glass substrates by multi-source vacuum co-evaporation technique. The structural analysis done by X-ray diffraction ascertained the formation of nano structured tetragonal chalcopyrite thin films. The compound formation was confirmed by X-ray photo-electron spectroscopy. Atomic force microscopic technique has been used for surface morphological analysis. Direct allowed band gap ∼1.78eV with high absorption coefficient ∼10 6 /m was estimated from absorbance spectra. Low temperature thermoelectric effects has been investigated in the temperature range 80–330K which manifested an unusual increase in Seebeck coefficient with negligible phonon drag toward the very low and room temperature regime. The electrical resistivity of these n-type films was assessed to be ∼2.6Ωm and the films showed good photo response

Improvement in interfacial characteristics of low-voltage carbon nanotube thin-film transistors with solution-processed boron nitride thin films

Energy Technology Data Exchange (ETDEWEB)

Jeon, Jun-Young; Ha, Tae-Jun, E-mail: taejunha0604@gmail.com

2017-08-15

Highlights: • We demonstrate the potential of solution-processed boron nitride (BN) thin films for nanoelectronics. • Improved interfacial characteristics reduced the leakage current by three orders of magnitude. • The BN encapsulation improves all the device key metrics of low-voltage SWCNT-TFTs. • Such improvements were achieved by reduced interaction of interfacial localized states. - Abstract: In this article, we demonstrate the potential of solution-processed boron nitride (BN) thin films for high performance single-walled carbon nanotube thin-film transistors (SWCNT-TFTs) with low-voltage operation. The use of BN thin films between solution-processed high-k dielectric layers improved the interfacial characteristics of metal-insulator-metal devices, thereby reducing the current density by three orders of magnitude. We also investigated the origin of improved device performance in SWCNT-TFTs by employing solution-processed BN thin films as an encapsulation layer. The BN encapsulation layer improves the electrical characteristics of SWCNT-TFTs, which includes the device key metrics of linear field-effect mobility, sub-threshold swing, and threshold voltage as well as the long-term stability against the aging effect in air. Such improvements can be achieved by reduced interaction of interfacial localized states with charge carriers. We believe that this work can open up a promising route to demonstrate the potential of solution-processed BN thin films on nanoelectronics.

Scanning tunneling spectroscopic studies of superconducting NbN single crystal thin films at 4.2 K

International Nuclear Information System (INIS)

Kashiwaya, S.; Koyanagi, M.; Matsuda, M.; Shoji, A.; Shibata, H.

1991-01-01

This paper reports on a Low Temperature Scanning Tunneling Microscope (LTSTM) constructed to study the microscopic properties of superconductors. It has atomic resolution from room temperature to 4.2 K. Conductance spectra obtained between a Pt tip and a NbN thin film agreed well with theoretical curves based on the BCS theory

Leakage current phenomena in Mn-doped Bi(Na,K)TiO_3-based ferroelectric thin films

International Nuclear Information System (INIS)

Walenza-Slabe, J.; Gibbons, B. J.

2016-01-01

Mn-doped 80(Bi_0_._5Na_0_._5)TiO_3-20(Bi_0_._5K_0_._5)TiO_3 thin films were fabricated by chemical solution deposition on Pt/TiO_2/SiO_2/Si substrates. Steady state and time-dependent leakage current were investigated from room temperature to 180 °C. Undoped and low-doped films showed space-charge-limited current (SCLC) at high temperatures. The electric field marking the transition from Ohmic to trap-filling-limited current increased monotonically with Mn-doping. With 2 mol. % Mn, the current was Ohmic up to 430 kV/cm, even at 180 °C. Modeling of the SCLC showed that all films exhibited shallow trap levels and high trap concentrations. In the regime of steady state leakage, there were also observations of negative differential resistivity and positive temperature coefficient of resistivity near room temperature. Both of these phenomena were confined to relatively low temperatures (below ∼60 °C). Transient currents were observed in the time-dependent leakage data, which was measured out to several hundred seconds. In the undoped films, these were found to be a consequence of oxygen vacancy migration modulating the electronic conductivity. The mobility and thermal activation energy for oxygen vacancies was extracted as μ_i_o_n ≈ 1.7 × 10"−"1"2 cm"2 V"−"1 s"−"1 and E_A_,_i_o_n ≈ 0.92 eV, respectively. The transient current displayed different characteristics in the 1 mol. % Mn-doped films which were not readily explained by oxygen vacancy migration.

Electrical parameters of metal doped n-CdO/p-Si heterojunction diodes

Energy Technology Data Exchange (ETDEWEB)

Umadevi, P. [Department of Physics, Sri Vidya College of Engineering & Technology, Virudhunagar 626005, Tamilnadu (India); Prithivikumaran, N., E-mail: janavi_p@yahoo.com [Nanoscience Research Lab, Department of Physics, VHNSN College, Virudhunagar 626001, Tamilnadu (India)

2016-11-15

The CdO, Al doped CdO and Cu doped CdO thin films were coated on p-type silicon substrates by sol–gel spin coating method. The structural, surface morphological and electrical properties of undoped, Al and Cu doped CdO films on silicon substrate were studied. The Ag/CdO/p-Si, Ag/Al: CdO/p-Si and Ag/Cu: CdO/p-Si heterojunction diodes were fabricated and the diode parameters such as reverse saturation current, barrier height and ideality factor of the diodes were investigated by current–voltage (I–V)characteristics. The reverse current of the diode was found to increase strongly with the doping. The values of barrier height and ideality factor were decreased by doping with aluminium and copper. Photo response of the heterojunction diodes was studied and it was found that, the heterojunction diode constructed with the doped CdO has larger Photo response than the undoped heterojunction diode.

Nanocrystalline transparent SnO{sub 2}-ZnO films fabricated at lower substrate temperature using a low-cost and simplified spray technique

Energy Technology Data Exchange (ETDEWEB)

Ravichandran, K.; Sakthivel, B.; Philominathan, P. [P. G. and Research Department of Physics, AVVM. Sri Pushpam College, Poondi, Thanjavur, Tamilnadu 613503 (India)

2010-03-15

Nanocrystalline and transparent conducting SnO{sub 2}- ZnO films were fabricated by employing an inexpensive, simplified spray technique using a perfume atomizer at relatively low substrate temperature (360{+-}5 C) compared with conventional spray method. The structural studies reveal that the SnO{sub 2}-ZnO films are polycrystalline in nature with preferential orientation along the (101) plane. The dislocation density is very low (1.48 x 10{sup 15}lines/m{sup 2}), indicating the good crystallinity of the films. The crystallite size of the films was found to be in the range of 26-34 nm. The optical transmittance in the visible range and the optical band gap are 85% and 3.6 eV respectively. The sheet resistance increases from 8.74 k{omega}/{open_square} to 32.4 k{omega}/{open_square} as the zinc concentration increases from 0 to 40 at.%. The films were found to have desirable figure of merit (1.63 x 10{sup -2} ({omega}/{open_square}){sup -1}), low temperature coefficient of resistance (-1.191/K) and good thermal stability. This simplified spray technique may be considered as a promising alternative to conventional spray for the massive production of economic SnO{sub 2} - ZnO films for solar cells, sensors and opto-electronic applications. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Thermoelectric properties and performance of flexible reduced graphene oxide films up to 3,000 K

Science.gov (United States)

Li, Tian; Pickel, Andrea D.; Yao, Yonggang; Chen, Yanan; Zeng, Yuqiang; Lacey, Steven D.; Li, Yiju; Wang, Yilin; Dai, Jiaqi; Wang, Yanbin; Yang, Bao; Fuhrer, Michael S.; Marconnet, Amy; Dames, Chris; Drew, Dennis H.; Hu, Liangbing

2018-02-01

The development of ultrahigh-temperature thermoelectric materials could enable thermoelectric topping of combustion power cycles as well as extending the range of direct thermoelectric power generation in concentrated solar power. However, thermoelectric operation temperatures have been restricted to under 1,500 K due to the lack of suitable materials. Here, we demonstrate a thermoelectric conversion material based on high-temperature reduced graphene oxide nanosheets that can perform reliably up to 3,000 K. After a reduction treatment at 3,300 K, the nanosheet film exhibits an increased conductivity to 4,000 S cm-1 at 3,000 K and a high power factor S2σ = 54.5 µW cm-1 K-2. We report measurements characterizing the film's thermoelectric properties up to 3,000 K. The reduced graphene oxide film also exhibits a high broadband radiation absorbance and can act as both a radiative receiver and a thermoelectric generator. The printable, lightweight and flexible film is attractive for system integration and scalable manufacturing.

Effect of large compressive strain on low field electrical transport in La0.88Sr0.12MnO3 thin films

International Nuclear Information System (INIS)

Prasad, Ravikant; Gaur, Anurag; Siwach, P K; Varma, G D; Kaur, A; Singh, H K

2007-01-01

We have investigated the effect of large in-plane compressive strain on the electrical transport in La 0.88 Sr 0.12 MnO 3 in thin films. For achieving large compressive strain, films have been deposited on single crystal LaAlO 3 (LAO, a = 3.798 A) substrate from a polycrystalline bulk target having average in-plane lattice parameter a av = (a b + b b )/2 = 3.925 A. The compressive strain was further relaxed by varying the film thickness in the range ∼6-75 nm. In the film having least thickness (∼6 nm) large increase (c = 3.929 A) in the out-of-plane lattice parameter is observed which gradually decreases towards the bulk value (c bulk = 3.87 A) for ∼75 nm thick film. This shows that the film having the least thickness is under large compressive strain, which partially relaxes with increasing film thickness. The T IM of the bulk target ∼145 K goes up to ∼235 K for the ∼6 nm thin film and even for partially strain relaxed ∼75 nm thick film T IM is as high as ∼200 K. This enhancement in T IM is explained in terms of suppression of Jahn-Teller distortion of the MnO 6 octahedra by the large in-plane compressive strain. We observe a large enhancement in the low field magnetoresistance (MR) just below T IM in the films having partial strain relaxation. Thick films of 6 and 20 nm have MR ∼14% at 3 kOe that almost doubles in 35 nm film to ∼27%. Similar enhancement is also obtained in the case of the temperature coefficient of resistivity. The near doubling of low field MR is explained in terms of delocalization of weakly localized carriers around T IM by small magnetic fields

Low temperature CVD growth of ultrathin carbon films

Directory of Open Access Journals (Sweden)

Chao Yang

2016-05-01

Full Text Available We demonstrate the low temperature, large area growth of ultrathin carbon films by chemical vapor deposition under atmospheric pressure on various substrates. In particularly, uniform and continuous carbon films with the thickness of 2-5 nm were successfully grown at a temperature as low as 500 oC on copper foils, as well as glass substrates coated with a 100 nm thick copper layer. The characterizations revealed that the low-temperature-grown carbon films consist on few short, curved graphene layers and thin amorphous carbon films. Particularly, the low-temperature grown samples exhibited over 90% transmittance at a wavelength range of 400-750 nm and comparable sheet resistance in contrast with the 1000oC-grown one. This low-temperature growth method may offer a facile way to directly prepare visible ultrathin carbon films on various substrate surfaces that are compatible with temperatures (500-600oC used in several device processing technologies.

Electrical transport in La1−xCaxMnO3 thin films at low temperatures

Indian Academy of Sciences (India)

quadratic temperature dependence at low temperatures is attributed to the collapse of the minority spin band. The two-magnon and electron–phonon processes contribute to scattering of carriers in the temperature range above 120 K. Keywords. La1−x Cax MnO3 thin films; electrical transport; low temperature resistivity; ...

Preparation of Ultra Low-κ Porous SiOCH Films from Ring-Type Siloxane with Unsaturated Hydrocarbon Side Chains by Spin-On Deposition

International Nuclear Information System (INIS)

Chun-Xiao, Yang; Chi, Zhang; Qing-Qing, Sun; Sai-Sheng, Xu; Li-Feng, Zhang; Yu, Shi; Shi-Jin, Ding; Wei, Zhang

2010-01-01

An ultra-low-dielectric-constant (ultra low-k, or ULK) porous SiOCH film is prepared using a single ring-type siloxane precursor of the 2,4,6,8-tetravinyl-2,4,6,8-tetramethylcyclotetrasiloxane by means of spin-on deposition, followed by crosslinking reactions between the precursor monomers under UV irradiation. The as-prepared film has an ultra low k of 2.41 at 1 MHz due to incorporation of pores and hydrocarbon crosslinkages, a leakage current density of 9.86 × 10 −7 A/cm 2 at 1 MV/cm, as well as a breakdown field strength of ∼1.5 MV/cm. Further, annealing at 300°C results in lower k (i.e., 1.94 at 1 MHz), smaller leakage current density (2.96 × 10 −7 A/cm 2 at 1 MV/cm) and higher breakdown field strength (about 3.5 MV/cm), which are likely caused by the short-ranged structural rearrangement and reduction of defects in the film. Finally, the mechanical properties and surface morphology of films are also evaluated after different temperature annealing. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Characterization of k-carrageenan/Locust bean gumbased films with b-carotene emulsion

OpenAIRE

Martins, Joana; Silva, H. D.; Rojas, R.; Aguilar, Cristóbal N.; Vicente, A. A.

2014-01-01

New bio-based materials have been exploited to develop biodegradable and edible films as an effort to extend shelf life and improve quality of food while reducing packaging waste. The objective of this study was to investigate physicochemical properties of k-carrageenan/locust bean gum (k-car/LBG) films with different bcarotene emulsion concentrations. To prepare oil-in-water emulsions, b-carotene (0.03% v/v) was dissolved in mediumchain triglycerides (MCTs), and the solution was mixed ...

Development of Amorphous/Microcrystalline Silicon Tandem Thin-Film Solar Modules with Low Output Voltage, High Energy Yield, Low Light-Induced Degradation, and High Damp-Heat Reliability

Directory of Open Access Journals (Sweden)

Chin-Yi Tsai

2014-01-01

Full Text Available In this work, tandem amorphous/microcrystalline silicon thin-film solar modules with low output voltage, high energy yield, low light-induced degradation, and high damp-heat reliability were successfully designed and developed. Several key technologies of passivation, transparent-conducting-oxide films, and cell and segment laser scribing were researched, developed, and introduced into the production line to enhance the performance of these low-voltage modules. A 900 kWp photovoltaic system with these low-voltage panels was installed and its performance ratio has been simulated and projected to be 92.1%, which is 20% more than the crystalline silicon and CdTe counterparts.

Interface Study on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using High-k Gate Dielectric Materials

Directory of Open Access Journals (Sweden)

Yu-Hsien Lin

2015-01-01

Full Text Available We investigated amorphous indium gallium zinc oxide (a-IGZO thin film transistors (TFTs using different high-k gate dielectric materials such as silicon nitride (Si3N4 and aluminum oxide (Al2O3 at low temperature process (<300°C and compared them with low temperature silicon dioxide (SiO2. The IGZO device with high-k gate dielectric material will expect to get high gate capacitance density to induce large amount of channel carrier and generate the higher drive current. In addition, for the integrating process of integrating IGZO device, postannealing treatment is an essential process for completing the process. The chemical reaction of the high-k/IGZO interface due to heat formation in high-k/IGZO materials results in reliability issue. We also used the voltage stress for testing the reliability for the device with different high-k gate dielectric materials and explained the interface effect by charge band diagram.

The effect of Cu on the properties of CdO/Cu/CdO multilayer films for transparent conductive electrode applications

Energy Technology Data Exchange (ETDEWEB)

Raaif, M.; Mohamed, S.H. [Sohag University, Physics Department, Faculty of Science, Sohag (Egypt)

2017-06-15

Transparent conductive CdO/Cu/CdO multilayer films were prepared using rf plasma magnetron sputtering and electron beam evaporation techniques. The CdO layers were prepared using rf plasma magnetron sputtering, while the Cu interlayer was prepared by electron beam evaporation technique. The Cu layer thickness was varied between 1 and 10 nm. The structural and optical properties as well as the sheet resistance of the multilayer films were studied. X-ray diffraction measurements revealed the presence of cubic CdO structure and the Cu peak was only observed for the multilayers prepared with 10 nm of Cu. It has been observed that the Cu interlayer thickness has a great influence on the optical and electrical properties of the multilayers. The transmittance of the multilayer films decreased while the reflectance increased with increasing Cu interlayer thickness. The refractive index and the extinction coefficient of the multilayer films were calculated. The estimated optical band gap values were found to be decreased from 2.75 ± 0.02 to 2.40 ± 0.02 eV as the Cu interlayer thickness increased from 1 to 10 nm. The sheet resistance was sensitive to the Cu interlayer thickness and it decreased with increasing Cu interlayer thickness. A sheet resistSSance of 21.7 Ω/sq, an average transmittance (between 700 and 1000 nm) of 77%, and an optical band gap of 2.5 ± 0.02 eV were estimated for the multilayer film with 2 nm Cu layer. The multilayer film with 2 nm Cu layer has the highest figure of merit value of 3.2 x 10{sup -3} Ω{sup -1}. This indicates that the properties of this multilayer film are suitable for transparent conductive electrode applications. (orig.)

Surface roughening of silicon, thermal silicon dioxide, and low-k dielectric coral films in argon plasma

International Nuclear Information System (INIS)

Yin Yunpeng; Sawin, Herbert H.

2008-01-01

The surface roughness evolutions of single crystal silicon, thermal silicon dioxide (SiO 2 ), and low dielectric constant film coral in argon plasma have been measured by atomic force microscopy as a function of ion bombardment energy, ion impingement angle, and etching time in an inductively coupled plasma beam chamber, in which the plasma chemistry, ion energy, ion flux, and ion incident angle can be adjusted independently. The sputtering yield (or etching rate) scales linearly with the square root of ion energy at normal impingement angle; additionally, the angular dependence of the etching yield of all films in argon plasma followed the typical sputtering yield curve, with a maximum around 60 deg. -70 deg. off-normal angle. All films stayed smooth after etching at normal angle but typically became rougher at grazing angles. In particular, at grazing angles the rms roughness level of all films increased if more material was removed; additionally, the striation structure formed at grazing angles can be either parallel or transverse to the beam impingement direction, which depends on the off-normal angle. More interestingly, the sputtering caused roughness evolution at different off-normal angles can be qualitatively explained by the corresponding angular dependent etching yield curve. In addition, the roughening at grazing angles is a strong function of the type of surface; specifically, coral suffers greater roughening compared to thermal silicon dioxide

Ag-doped CdO nanocatalysts: Preparation, characterization and catechol oxidase activity

Science.gov (United States)

El-Kemary, Maged; El-Mehasseb, Ibrahim; El-Shamy, Hany

2018-06-01

Silver doped cadmium oxide (Ag/CdO) nanoparticles with an average size of 41 nm have been successfully synthesized via thermal decomposition and liquid impregnation technique. The structural characterization has been performed by using several spectroscopic techniques, e.g., X-ray diffraction (XRD), scanning electron microscopy (SEM) and fourier-transform infrared (FT-IR). The catechol oxidase has been studied by UV-visible absorption spectroscopy and fourier-transform infrared as well as the mechanism has been assured by cyclic voltammetry and fluorescence spectroscopy. The results indicate that the oxidation does not occur in the presence of unsupported cadmium oxide particles by silver and in the same time, the catechol oxidase activity of silver doped CdO nanoparticles were improved by about three orders of magnitude than silver ions.

Influence of Ag doping concentration on structural and optical properties of CdS thin film

International Nuclear Information System (INIS)

Kumar, Pragati; Saxena, Nupur; Gupta, Vinay; Agarwal, Avinash

2015-01-01

This work shows the influence of Ag concentration on structural properties of pulsed laser deposited nanocrystalline CdS thin film. X-ray photoelectron spectroscopy (XPS) studies confirm the dopant concentration in CdS films and atomic concentration of elements. XPS studies show that the samples are slightly sulfur deficient. GAXRD scan reveals the structural phase transformation from cubic to hexagonal phase of CdS without appearance of any phase of CdO, Ag 2 O or Ag 2 S suggesting the substitutional doping of Ag ions. Photoluminescence studies illustrate that emission intensity increases with increase in dopant concentration upto 5% and then decreases for higher dopant concentration

Influence of Ag doping concentration on structural and optical properties of CdS thin film

Energy Technology Data Exchange (ETDEWEB)

Kumar, Pragati, E-mail: pkumar.phy@gmail.com [Department of Physics, Bareilly College, Bareilly, 243 005, Uttar Pradesh (India); Department of Physics and Astrophysics, University of Delhi, Delhi, 110 007 (India); Saxena, Nupur; Gupta, Vinay [Department of Physics and Astrophysics, University of Delhi, Delhi, 110 007 (India); Agarwal, Avinash [Department of Physics, Bareilly College, Bareilly, 243 005, Uttar Pradesh (India)

2015-05-15

This work shows the influence of Ag concentration on structural properties of pulsed laser deposited nanocrystalline CdS thin film. X-ray photoelectron spectroscopy (XPS) studies confirm the dopant concentration in CdS films and atomic concentration of elements. XPS studies show that the samples are slightly sulfur deficient. GAXRD scan reveals the structural phase transformation from cubic to hexagonal phase of CdS without appearance of any phase of CdO, Ag{sub 2}O or Ag{sub 2}S suggesting the substitutional doping of Ag ions. Photoluminescence studies illustrate that emission intensity increases with increase in dopant concentration upto 5% and then decreases for higher dopant concentration.

Involvement of the Cys-Tyr cofactor on iron binding in the active site of human cysteine dioxygenase.

Science.gov (United States)

Arjune, Sita; Schwarz, Guenter; Belaidi, Abdel A

2015-01-01

Sulfur metabolism has gained increasing medical interest over the last years. In particular, cysteine dioxygenase (CDO) has been recognized as a potential marker in oncology due to its altered gene expression in various cancer types. Human CDO is a non-heme iron-dependent enzyme, which catalyzes the irreversible oxidation of cysteine to cysteine sulfinic acid, which is further metabolized to taurine or pyruvate and sulfate. Several studies have reported a unique post-translational modification of human CDO consisting of a cross-link between cysteine 93 and tyrosine 157 (Cys-Tyr), which increases catalytic efficiency in a substrate-dependent manner. However, the reaction mechanism by which the Cys-Tyr cofactor increases catalytic efficiency remains unclear. In this study, steady-state kinetics were determined for wild type CDO and two different variants being either impaired or saturated with the Cys-Tyr cofactor. Cofactor formation in CDO resulted in an approximately fivefold increase in k cat and tenfold increase in k cat/K m over the cofactor-free CDO variant. Furthermore, iron titration experiments revealed an 18-fold decrease in K d of iron upon cross-link formation. This finding suggests a structural role of the Cys-Tyr cofactor in coordinating the ferrous iron in the active site of CDO in accordance with the previously postulated reaction mechanism of human CDO. Finally, we identified product-based inhibition and α-ketoglutarate and glutarate as CDO inhibitors using a simplified well plate-based activity assay. This assay can be used for high-throughput identification of additional inhibitors, which may contribute to understand the functional importance of CDO in sulfur amino acid metabolism and related diseases.

Thermally stimulated current analysis of Zn{sub 1-x}Cd{sub x}O alloy films

Energy Technology Data Exchange (ETDEWEB)

Aybek, A. Senol, E-mail: saybek@anadolu.edu.tr [Department of Physics, Anadolu University, Eskisehir 26470 (Turkey); Baysal, Nihal [Kilicoglu Anadolu High School, Eskisehir 26050 (Turkey); Zor, Muhsin; Turan, Evren; Kul, Metin [Department of Physics, Anadolu University, Eskisehir 26470 (Turkey)

2011-02-03

Research highlights: > We have studied the structural and electrical properties of Zn{sub 1-x}Cd{sub x}O alloy films deposited by ultrasonic spray pyrolysis technique. > The trap energy, the capture cross-section, the attempt-to-escape frequency and the concentration of the traps in Zn{sub 1-x}Cd{sub x}O films are reported. > The effect of the Cd incorporation into ZnO material on trapping levels was investigated by the TSC measurements. Two overlapped peaks were registered at levels of 0.033 and 0.197 eV in ZnO sample by the curve fitting technique. The observed trap energy levels for ZnO film is thought to originate from zinc interstitials and oxygen vacancies. However, the incorporation of Cd into Zn{sub 1-x}Cd{sub x}O alloy films with x = 0.59 have resulted in two trapping centers with activation energies of 0.118 and 0.215 eV. The observed trap levels in Zn{sub 0.41}Cd{sub 0.59}O alloy film are related to oxygen adsorption in the sample. - Abstract: We have studied the structural and electrical properties of Zn{sub 1-x}Cd{sub x}O alloy films deposited by ultrasonic spray pyrolysis technique. XRD measurement indicated that pure ZnO and CdO samples had single phases with hexagonal wurtzite and cubic structures, respectively. However, Zn{sub 1-x}Cd{sub x}O alloy films with x = 0.59 and 0.78 exhibited mixtures of a hexagonal wurtzite ZnO phase and a cubic CdO phase. Analysis of thermally stimulated current spectra of Zn{sub 1-x}Cd{sub x}O alloy films revealed the existence of a number of overlapped peaks each characterized by different trap energy levels located in the range of 0.033-0.215 eV below the conduction band. We have used curve fitting method for the evaluation of the trap parameters of the alloy films. The values of attempt-to-escape frequency {nu}, capture cross-section S and concentration of the traps N{sub t} have been determined.

Low temperature excitonic spectroscopy and dynamics as a probe of quality in hybrid perovskite thin films.

Science.gov (United States)

Sarang, Som; Ishihara, Hidetaka; Chen, Yen-Chang; Lin, Oliver; Gopinathan, Ajay; Tung, Vincent C; Ghosh, Sayantani

2016-10-19

We have developed a framework for using temperature dependent static and dynamic photoluminescence (PL) of hybrid organic-inorganic perovskites (PVSKs) to characterize lattice defects in thin films, based on the presence of nanodomains at low temperature. Our high-stability PVSK films are fabricated using a novel continuous liquid interface propagation technique, and in the tetragonal phase (T > 120 K), they exhibit bi-exponential recombination from free charge carriers with an average PL lifetime of ∼200 ns. Below 120 K, the emergence of the orthorhombic phase is accompanied by a reduction in lifetimes by an order of magnitude, which we establish to be the result of a crossover from free carrier to exciton-dominated radiative recombination. Analysis of the PL as a function of excitation power at different temperatures provides direct evidence that the exciton binding energy is different in the two phases, and using these results, we present a theoretical approach to estimate this variable binding energy. Our findings explain this anomalous low temperature behavior for the first time, attributing it to an inherent fundamental property of the hybrid PVSKs that can be used as an effective probe of thin film quality.

Effects of fluoride residue on thermal stability in Cu/porous low-k interconnects

Energy Technology Data Exchange (ETDEWEB)

Kobayashi, Y.; Ozaki, S.; Nakamura, T. [FUJITSU LABORATORIES Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197 (Japan)

2014-06-19

We have investigated the effects of fluoride residue on the thermal stability of a Cu/barrier metal (BM)/porous low-k film (k < 2.3) structure. We confirmed that the Cu agglomerated more on a BM/inter layer dielectric (ILD) with a fluoride residue. To consider the effect of fluoride residue on Cu agglomeration, the structural state at the Cu/BM interface was evaluated with a cross-section transmission electron microscope (TEM) and atomic force microscope (AFM). In addition, the chemical bonding state at the Cu/BM interface was evaluated with the interface peeling-off method and X-ray photoelectron spectroscopy (XPS). Moreover, we confirmed the ionization of fluoride residue and oxidation of Cu with fluoride and moisture to clarify the effect of fluoride residue on Cu. Our experimental results indicated that the thermal stability in Cu/porous low-k interconnects was degraded by enhancement of Cu oxidation with fluoride ions diffusion as an oxidizing catalyst.

Synthesis, Structure, and Film Properties of Novel low-k UV-active Polycarbosilanes with Embedded Disilacyclobutanes

Science.gov (United States)

LeFevre, Scott W.

The phenylene-bridged cyclolinear polycarbosilane (PBCLPCS) was synthesized via Grignard coupling from 1,4-bis(bromomagnesio)benzene with 1,3-dichloro-, and 1,3-diethoxy-1,3-disilacyclobutanes (DCDSCB, and DEDSCB respectively). Investigation of the resulting chemical structures by nuclear magnetic resonance spectroscopy (NMR) revealed a wide array of possible end groups and thus termination mechanisms. Temperature-gradient interaction chromatography (TGIC) was employed as an effective separation tool to achieve a predominantly monomer-by-monomer separation of the low molecular weight reaction products. Further analysis of the TGIC fractions by matrix-assisted laser desorption ionization mass spectrometry with time of flight detection (MALDI-ToF) allowed for a much more detailed study of chemical structure, revealing very different primary modes of termination for the two synthesis schemes. While the slightly more reactive Si-Cl groups from DCDSCB are more sensitive to multiple side reactions including hydrolysis, it was shown that the primary end groups were phenyl rings, indicating a possible imbalance in stoichiometry favoring the aryl-Grignard reagent. The DEDSCB-based synthesis has fewer side reactions, as indicated by few groupings of MALDI peaks at regular intervals equal to the repeat unit molecular weight; however the primary end groups were unreacted ethoxy moieties, and a bromine terminated phenyl ring. This indicates that the primary modes of termination were either limited chain growth from the less reactive ethoxy groups, or incomplete formation of the di-Grignard. The optical, UV-curing and thin film characteristics of PBCLPCS were investigated to gain an understanding of the unique film properties of this new class of material. Upon UV-curing PBCLPCS, the chromophore blue shifts 11nm but still absorbs appreciably at 254nm, leading to UV attenuation at greater depths within a film. The thickness dependent UV-curing characteristics were investigated

Role of spin polarization in FM/Al/FM trilayer film at low temperature

Science.gov (United States)

Lu, Ning; Webb, Richard

2014-03-01

Measurements of electronic transport in diffusive FM/normal metal/FM trilayer film are performed at temperature ranging from 2K to 300K to determine the behavior of the spin polarized current in normal metal under the influence of quantum phase coherence and spin-orbital interaction. Ten samples of Hall bar with length of 200 micron and width of 20 micron are fabricated through e-beam lithography followed by e-gun evaporation of Ni0.8Fe0.2, aluminum and Ni0.8Fe0.2 with different thickness (5nm to 45nm) in vacuum. At low temperature of 4.2K, coherent backscattering, Rashba spin-orbital interaction and spin flip scattering of conduction electrons contribute to magnetoresistance at low field. Quantitative analysis of magnetoresistance shows transition between weak localization and weak anti-localization for samples with different thickness ratio, which indicates the spin polarization actually affects the phase coherence length and spin-orbital scattering length. However, at temperature between 50K and 300K, only the spin polarization dominates the magnetoresistance.

High magnetoresistance at low magnetic fields in self-assembled ZnO-Co nanocomposite films.

Science.gov (United States)

Jedrecy, N; Hamieh, M; Hebert, C; Perriere, J

2017-07-27

The solid phase growth of self-assembled nanocrystals embedded in a crystalline host matrix opens up wide perspectives for the coupling of different physical properties, such as magnetic and semiconducting. In this work, we report the pulsed laser growth at room temperature of thin films composed of a dispersed array of ferromagnetic Co (0001) nanoclusters with an in-plane mono-size width of 1.3 nm, embedded in a ZnO (0001) crystalline matrix. The as-grown films lead to very high values of magnetoresistance, ranging at 9 T from -11% at 300 K to -19% at 50 K, with a steep decrease of the magnetoresistance at low magnetic fields. We establish the relationship between the magnetoresistance behavior and the magnetic response of the Co nanocluster assembly. A spin-dependent tunneling of the electrons between the Co nanoclusters through and by the semi-insulating ZnO host is achieved in our films, promising with regard to magnetic field sensors or Si-integrated spintronic devices. The effects of thermal annealing are also discussed.

Radiolysis products and sensory properties of electron-beam-irradiated high-barrier food-packaging films containing a buried layer of recycled low-density polyethylene.

Science.gov (United States)

Chytiri, S D; Badeka, A V; Riganakos, K A; Kontominas, M G

2010-04-01

The aim was to study the effect of electron-beam irradiation on the production of radiolysis products and sensory changes in experimental high-barrier packaging films composed of polyamide (PA), ethylene-vinyl alcohol (EVOH) and low-density polyethylene (LDPE). Films contained a middle buried layer of recycled LDPE, while films containing 100% virgin LDPE as the middle buried layer were taken as controls. Irradiation doses ranged between zero and 60 kGy. Generally, a large number of radiolysis products were produced during electron-beam irradiation, even at the lower absorbed doses of 5 and 10 kGy (approved doses for food 'cold pasteurization'). The quantity of radiolysis products increased with irradiation dose. There were no significant differences in radiolysis products identified between samples containing a recycled layer of LDPE and those containing virgin LDPE (all absorbed doses), indicating the 'functional barrier' properties of external virgin polymer layers. Sensory properties (mainly taste) of potable water were affected after contact with irradiated as low as 5 kGy packaging films. This effect increased with increasing irradiation dose.

Optical and Electrical Properties of Tin-Doped Cadmium Oxide Films Prepared by Electron Beam Technique

Science.gov (United States)

Ali, H. M.; Mohamed, H. A.; Wakkad, M. M.; Hasaneen, M. F.

2009-04-01

Tin-doped cadmium oxide films were deposited by electron beam evaporation technique. The structural, optical and electrical properties of the films were characterized. The X-ray diffraction (XRD) study reveals that the films are polycrystalline in nature. As composition and structure change due to the dopant ratio and annealing temperature, the carrier concentration was varied around 1020 cm-3, and the mobility increased from less than 10 to 45 cm2 V-1 s-1. A transmittance value of ˜83% and a resistivity value of 4.4 ×10-4 Ω cm were achieved for (CdO)0.88(SnO2)0.12 film annealed at 350 °C for 15 min., whereas the maximum value of transmittance ˜93% and a resistivity value of 2.4 ×10-3 Ω cm were obtained at 350 °C for 30 min. The films exhibited direct band-to-band transitions, which corresponded to optical band gaps of 3.1-3.3 eV.

Poster — Thur Eve — 42: Radiochromic film calibration for low-energy seed brachytherapy dose measurement

Energy Technology Data Exchange (ETDEWEB)

Morrison, H; Menon, G; Sloboda, R [Department of Medical Physics, Cross Cancer Institute, Edmonton, Alberta T6G 1Z2 (Canada); Department of Oncology, University of Alberta, Edmonton, Alberta T6G 2R3 (Canada)

2014-08-15

The purpose of this study was to investigate the accuracy of radiochromic film calibration procedures used in external beam radiotherapy when applied to I-125 brachytherapy sources delivering higher doses, and to determine any necessary modifications to achieve similar accuracy in absolute dose measurements. GafChromic EBT3 film was used to measure radiation doses upwards of 35 Gy from 6 MV, 75 kVp and (∼28 keV) I-125 photon sources. A custom phantom was used for the I-125 irradiations to obtain a larger film area with nearly constant dose to reduce the effects of film heterogeneities on the optical density (OD) measurements. RGB transmission images were obtained with an Epson 10000XL flatbed scanner, and calibration curves relating OD and dose using a rational function were determined for each colour channel and at each energy using a non-linear least square minimization method. Differences found between the 6 MV calibration curve and those for the lower energy sources are large enough that 6 MV beams should not be used to calibrate film for low-energy sources. However, differences between the 75 kVp and I-125 calibration curves were quite small; indicating that 75 kVp is a good choice. Compared with I-125 irradiation, this gives the advantages of lower type B uncertainties and markedly reduced irradiation time. To obtain high accuracy calibration for the dose range up to 35 Gy, two-segment piece-wise fitting was required. This yielded absolute dose measurement accuracy above 1 Gy of ∼2% for 75 kVp and ∼5% for I-125 seed exposures.

Related electrical, superconducting and structural characteristics of low temperature indium films

International Nuclear Information System (INIS)

Belevtsev, B.I.; Pilipenko, V.V.; Yatsuk, L.Ya.

1981-01-01

Reported are results of a complex study of electrical, superconducting and structural properties of indium films vacuum evaporated onto a liquid helium-cooled substrate. Structural electron diffraction investigations gave a better insight into the general features of the annealing during the warming-up of cold-deposited films. It is found that the annealing of indium films to about 80 to 100 K entails an irreversible growth of interplanar separations due to decreasing inhomogeneous microstresses. As the films are warmed from 100 to 300 K, the principal annealing processes are determined by crystallite growth and development of dominating orientation. The changes in the residual resistance and in Tsub(c) with warming the cold-deported films are explained on the base of structural data obtained. In particular, a direct relationship is revealed between the crystallite size and Tsub(c) [ru

Maintaining K+ balance on the low-Na+, high-K+ diet

Science.gov (United States)

Cornelius, Ryan J.; Wang, Bangchen; Wang-France, Jun

2016-01-01

A low-Na+, high-K+ diet (LNaHK) is considered a healthier alternative to the “Western” high-Na+ diet. Because the mechanism for K+ secretion involves Na+ reabsorptive exchange for secreted K+ in the distal nephron, it is not understood how K+ is eliminated with such low Na+ intake. Animals on a LNaHK diet produce an alkaline load, high urinary flows, and markedly elevated plasma ANG II and aldosterone levels to maintain their K+ balance. Recent studies have revealed a potential mechanism involving the actions of alkalosis, urinary flow, elevated ANG II, and aldosterone on two types of K+ channels, renal outer medullary K+ and large-conductance K+ channels, located in principal and intercalated cells. Here, we review these recent advances. PMID:26739887

Energy deposition evaluation for ultra-low energy electron beam irradiation systems using calibrated thin radiochromic film and Monte Carlo simulations

Energy Technology Data Exchange (ETDEWEB)

Matsui, S., E-mail: smatsui@gpi.ac.jp; Mori, Y. [The Graduate School for the Creation of New Photonics Industries, 1955-1 Kurematsucho, Nishiku, Hamamatsu, Shizuoka 431-1202 (Japan); Nonaka, T.; Hattori, T.; Kasamatsu, Y.; Haraguchi, D.; Watanabe, Y.; Uchiyama, K.; Ishikawa, M. [Hamamatsu Photonics K.K. Electron Tube Division, 314-5 Shimokanzo, Iwata, Shizuoka 438-0193 (Japan)

2016-05-15

For evaluation of on-site dosimetry and process design in industrial use of ultra-low energy electron beam (ULEB) processes, we evaluate the energy deposition using a thin radiochromic film and a Monte Carlo simulation. The response of film dosimeter was calibrated using a high energy electron beam with an acceleration voltage of 2 MV and alanine dosimeters with uncertainty of 11% at coverage factor 2. Using this response function, the results of absorbed dose measurements for ULEB were evaluated from 10 kGy to 100 kGy as a relative dose. The deviation between the responses of deposit energy on the films and Monte Carlo simulations was within 15%. As far as this limitation, relative dose estimation using thin film dosimeters with response function obtained by high energy electron irradiation and simulation results is effective for ULEB irradiation processes management.

Langmuir-Blodgett films of polyaniline for low density lipoprotein detection

Energy Technology Data Exchange (ETDEWEB)

Matharu, Zimple [Department of Science and Technology Centre on Biomolecular Electronics, Biomedical Instrumentation Section, National Physical Laboratory (CSIR), Dr. K. S. Krishnan Marg, New Delhi-110012 (India); Department of Physics and Astrophysics, University of Delhi, Delhi-110007 (India); Sumana, G. [Department of Science and Technology Centre on Biomolecular Electronics, Biomedical Instrumentation Section, National Physical Laboratory (CSIR), Dr. K. S. Krishnan Marg, New Delhi-110012 (India); Gupta, Vinay [Department of Physics and Astrophysics, University of Delhi, Delhi-110007 (India); Malhotra, B.D., E-mail: bansi.malhotra@gmail.co [Department of Science and Technology Centre on Biomolecular Electronics, Biomedical Instrumentation Section, National Physical Laboratory (CSIR), Dr. K. S. Krishnan Marg, New Delhi-110012 (India)

2010-11-30

Langmuir-Blodgett (LB) films of polyaniline (PANI) were utilized for the fabrication of impedimetric immunosensor for detection of human plasma low density lipoprotein (LDL) by immobilizing anti-apolipoprotein B (AAB) via EDC-NHS coupling. The modified electrodes were characterized by electrochemical impedance spectroscopy (EIS) and scanning electron microscopy. AAB/PANI-SA LB immunoelectrodes studied by EIS spectroscopy revealed detection of LDL in the wide range of 0.018 {mu}M (6 mg/dl) to 0.39 {mu}M (130 mg/dl), covering the physiological range in blood, with a sensitivity of 11.25 k{Omega} {mu}M{sup -1}.

Langmuir-Blodgett films of polyaniline for low density lipoprotein detection

International Nuclear Information System (INIS)

Matharu, Zimple; Sumana, G.; Gupta, Vinay; Malhotra, B.D.

2010-01-01

Langmuir-Blodgett (LB) films of polyaniline (PANI) were utilized for the fabrication of impedimetric immunosensor for detection of human plasma low density lipoprotein (LDL) by immobilizing anti-apolipoprotein B (AAB) via EDC-NHS coupling. The modified electrodes were characterized by electrochemical impedance spectroscopy (EIS) and scanning electron microscopy. AAB/PANI-SA LB immunoelectrodes studied by EIS spectroscopy revealed detection of LDL in the wide range of 0.018 μM (6 mg/dl) to 0.39 μM (130 mg/dl), covering the physiological range in blood, with a sensitivity of 11.25 kΩ μM -1 .

Current leakage relaxation and charge trapping in ultra-porous low-k materials

International Nuclear Information System (INIS)

Borja, Juan; Plawsky, Joel L.; Gill, William N.; Lu, T.-M.; Bakhru, Hassaram

2014-01-01

Time dependent dielectric failure has become a pivotal aspect of interconnect design as industry pursues integration of sub-22 nm process-technology nodes. Literature has provided key information about the role played by individual species such as electrons, holes, ions, and neutral impurity atoms. However, no mechanism has been shown to describe how such species interact and influence failure. Current leakage relaxation in low-k dielectrics was studied using bipolar field experiments to gain insight into how charge carrier flow becomes impeded by defects within the dielectric matrix. Leakage current decay was correlated to injection and trapping of electrons. We show that current relaxation upon inversion of the applied field can be described by the stretched exponential function. The kinetics of charge trapping events are consistent with a time-dependent reaction rate constant, k=k 0 ⋅(t+1) β−1 , where 0 < β < 1. Such dynamics have previously been observed in studies of charge trapping reactions in amorphous solids by W. H. Hamill and K. Funabashi, Phys. Rev. B 16, 5523–5527 (1977). We explain the relaxation process in charge trapping events by introducing a nonlinear charge trapping model. This model provides a description on the manner in which the transport of mobile defects affects the long-tail current relaxation processes in low-k films

Use of alpha-particle excited x-rays to measure the thickness of thin films containing low-Z elements

International Nuclear Information System (INIS)

Hanser, F.A.; Sellers, B.; Ziegler, C.A.

1976-01-01

The thickness of thin surface films containing low Z elements can be determined by measuring the K X-ray yields from alpha particle excitation. The samples are irradiated in a helium atmosphere by a 5 mCi polonium-210 source, and the low energy X-rays detected by a flow counter with a thin-stretched polypropylene window. The flow counter output is pulse height sorted by a single channel analyzer (SCA) and counted to give the X-ray yield. Best results have been obtained with Z = 6 to 9 (C, N, O, and F), but usable yields are obtained even for Z = 13 or 14 (Al and Si). The low energy of the X-rays (0.28 to 1.74 keV) limits the method to films of several hundred nm thickness or less and to situations where the substrate does not produce interfering X-rays. It is possible to determine the film thickness with 50 percent accuracy by direct calculation using the measured alpha-particle spectrum and known or calculated K X-ray excitation cross sections. By calibration with known standards the accuracy can be increased substantially. The system has thus far been applied to SiO 2 on Si, Al 2 O 3 on Al, and CH 2 on Al

Physical properties of drawn very low density polyethylene films

Energy Technology Data Exchange (ETDEWEB)

Kim, B.S. [Yeungnam University, Kyongsan (Korea, Republic of); Lee, J.Y. [Korea Institute of Footwear and Leather Technology, Pusan (Korea, Republic of)

1998-05-01

Very low density polyethylene (VLDPE) films were prepared by quenching the pressed melt in ice water. The films were drawn with universal testing machine under constant temperature at four different temperatures, 30, 60, 80, and 110 {sup o} C. Thermal, mechanical properties, grossity, and gas permeability of the drawn VLDPE films as a function of draw ratio were investigated to examine their applicability to packaging. The films showed tow melting peaks, i.e., low temperature endotherm (LTE) and high temperature endotherm (HTE). The melting temperatures were increased with the draw ratio and the drawing temperature. The mechanical properties of the VLDPE film drawn at 80 {sup o} C were superior to those drawn at 110 {sup o} C. The grossity and gas permeability of the VLDPE film drawn at 110 {sup o} C were found to be best among the drawn films.

Comparison of low contrast detectability of computed tomography and screen/film mammography systems

International Nuclear Information System (INIS)

Noriah Jamal; Kwan Hoong Ng; McLean, D.

2006-01-01

The objective of this study was to compare low contrast detectability of computed radiography (CR) and screen/film (SF) mammography systems. The Nijimegen contrast detail test object (CDMAM type 3.4) was imaged at 28 kV, in automatic exposure control mode separately. Six medical imaging physicists read each CDMAM phantom image. Contrast detail curves were plotted to compare low contrast detectability of CR (soft copy and hard copy) and SF mammography systems. Effect of varying exposure parameters, namely kV, object position inside the breast phantom, and entrance surface exposure (ESE) on the contrast detail curve were also investigated using soft copy CR. The significant of the difference of contrast between CR and SF, and for each exposure parameter was tested using non-parametric Kruskal-Wallis test. We found that the low contrast detectability of CR (soft copy and hard copy) system is not significantly different to that of SF system (p>0.05, Kruskal-Wallis test). For CR soft copy, no significant relationship (p>0.05, Kruskal-Wallis test) was seen for variation of kV, object position inside the breast phantom and ESE. This indicates that CR is comparable with SF for useful detection and visualization of low contrast objects such as small low contrast areas corresponding to breast pathology

Low-k SiOCH Film Etching Process and Its Diagnostics Employing Ar/C5F10O/N2 Plasma

Science.gov (United States)

Nagai, Mikio; Hayashi, Takayuki; Hori, Masaru; Okamoto, Hidekazu

2006-09-01

We proposed an environmental harmonic etching gas of C5F10O (CF3CF2CF2OCFCF2), and demonstrated the etching of low-k SiOCH films employing a dual-frequency capacitively coupled etching system. Dissociative ionization cross sections for the electron impact ionizations of C5F10O and c-C4F8 gases have been measured by quadrupole mass spectroscopy (QMS). The dissociative ionization cross section of CF3+ from C5F10O gas was much higher than those of other ionic species, and 10 times higher than that of CF3+ from C4F8 gas. CF3+ is effective for increasing the etching rate of SiO2. As a result, the etching rate of SiOCH films using Ar/C5F10O/N2 plasma was about 1000 nm/min, which is much higher than that using Ar/C4F8/N2 plasma. The behaviours of fluorocarbon radicals in Ar/C5F10O/N2 plasma, which were measured by infrared diode laser absorption spectroscopy, were similar to those in Ar/C4F8/N2 plasma. The densities of CF and CF3 radicals were markedly decreased with increasing N2 flow rate. Etching rate was controlled by N2 flow rate. A vertical profile of SiOCH with a high etching rate and less microloading was realized using Ar/C5F10O/N2 plasma chemistry.

Formation of closely packed Cu nanoparticle films by capillary immersion force for preparing low-resistivity Cu films at low temperature

Energy Technology Data Exchange (ETDEWEB)

Yokoyama, Shun, E-mail: shun.yokoyama.c2@tohoku.ac.jp; Motomiya, Kenichi; Takahashi, Hideyuki; Tohji, Kazuyuki [Tohoku University, Graduate School of Environmental Studies (Japan)

2016-11-15

Films made of closely packed Cu nanoparticles (NPs) were obtained by drop casting Cu NP inks. The capillary immersion force exerted during the drying of the inks caused the Cu NPs to attract each other, resulting in closely packed Cu NP films. The apparent density of the films was found to depend on the type of solvent in the ink because the capillary immersion force is affected by the solvent surface tension and dispersibility of Cu NPs in the solvent. The closely packed particulate structure facilitated the sintering of Cu NPs even at low temperature, leading to low-resistivity Cu films. The sintering was also enhanced with a decrease in the size of NPs used. We demonstrated that a closely packed particulate structure using Cu NPs with a mean diameter 61.7 nm showed lower resistivity (7.6 μΩ cm) than a traditionally made Cu NP film (162 μΩ cm) after heat treatment.

Low-density silicon thin films for lithium-ion battery anodes

Energy Technology Data Exchange (ETDEWEB)

Demirkan, M.T., E-mail: tmdemirkan@ualr.edu [Department of Physics and Astronomy, University of Arkansas at Little Rock, Little Rock, AR 72204 (United States); Department of Materials Science and Engineering, Gebze Technical University, Kocaeli (Turkey); Trahey, L. [Chemical Sciences and Engineering Division, Argonne National Laboratory, Argonne, IL 60439 (United States); Karabacak, T. [Department of Physics and Astronomy, University of Arkansas at Little Rock, Little Rock, AR 72204 (United States)

2016-02-01

Density of sputter deposited silicon (Si) thin films was changed by a simple working gas pressure control process, and its effects on the cycling performance of Si films in Li-ion batteries as anodes was investigated. Higher gas pressure results in reduced film densities due to a shadowing effect originating from lower mean free path of sputter atoms, which leads to a wider angular distribution of the incoming flux and formation of a porous film microstructure. Si thin film anodes of different densities ranging from 2.27 g/cm{sup 3} (film porosity ~ 3%) down to 1.64 g/cm{sup 3} (~ 30% porosity) were fabricated by magnetron sputtering at argon pressures varying from 0.2 Pa to 2.6 Pa, respectively. High density Si thin film anodes of 2.27 g/cm{sup 3} suffered from an unstable cycling behavior during charging/discharging depicted by a continuous reduction in specific down to ~ 830 mAh/g at the 100th cycle. Electrochemical properties of lower density films with 1.99 g/cm{sup 3} (~ 15% porosity) and 1.77 g/cm{sup 3} (~ 24% porosity) got worse resulting in only ~ 100 mAh/g capacity at 100th cycle. On the other hand, as the density of anode was further reduced down to about 1.64 g/cm{sup 3} (~ 30% porosity), cycling stability and capacity retention significantly improved resulting in specific capacity values ~ 650 mAh/g at 100th cycle with coulombic efficiencies of > 98%. Enhancement in our low density Si film anodes are believed to mainly originate from the availability of voids for volumetric expansion during lithiation and resulting compliant behavior that provides superior mechanical and electrochemical stability. - Highlights: • Low density Si thin films were studied as Li-ion battery anodes. • Low density Si films were fabricated by magnetron sputter deposition. • Density of Si films reduced down to as low as ~ 1.64 g/cm{sup 3} with a porosity of ~ 30% • Low density Si films presented superior mechanical properties during cycling.

Comparison of precursors for pulsed metal-organic chemical vapor deposition of HfO2 high-K dielectric thin films

International Nuclear Information System (INIS)

Teren, Andrew R.; Thomas, Reji; He, Jiaqing; Ehrhart, Peter

2005-01-01

Hafnium oxide films were deposited on Si(100) substrates using pulsed metal-organic chemical vapor deposition (CVD) and evaluated for high-K dielectric applications. Three types of precursors were tested: two oxygenated ones, Hf butoxide-dmae and Hf butoxide-mmp, and an oxygen-free one, Hf diethyl-amide. Depositions were carried out in the temperature range of 350-650 deg. C, yielding different microstructures ranging from amorphous to crystalline, monoclinic, films. The films were compared on the basis of growth rate, phase development, density, interface characteristics, and electrical properties. Some specific features of the pulsed injection technique are considered. For low deposition temperatures the growth rate for the amide precursor was significantly higher than for the mixed butoxide precursors. A thickness-dependent amorphous to crystalline phase transition temperature was found for all precursors. There is an increase of the film density along with the deposition temperature from values as low as 5 g/cm 3 at 350 deg. C to values close to the bulk value of 9.7 g/cm 3 at 550 deg. C. Crystallization is observed in the same temperature range for films of typically 10-20 nm thickness. However, annealing studies show that this density increase is not simply related to the crystallization of the films. Similar electrical properties could be observed for all precursors and the dielectric constant of the films reaches values similar to the best values reported for bulk crystalline HfO 2

Structural and photocarrier radiometric characterization of Cux(CdTe)yOz thin films growth by reactive sputtering

International Nuclear Information System (INIS)

Velazquez-Hernandez, R.; Rojas-Rodriguez, I.; Carmona-Rodriguez, J.; Jimenez-Sandoval, S.; Rodriguez-Garcia, M.E.

2011-01-01

This research presents a structural and photocarrier radiometric (PCR) characterization of Cu x (CdTe) y O z thin films grown using reactive radiofrequency co-sputtering. Electronic distribution induced by variations in dopant concentration as a function of the position was studied using photocarrier radiometric images. Optical and structural characterization of these thin films was carried out by using micro Raman spectroscopy and X-ray diffraction. Due to its nondestructive and noncontact characteristics, the PCR is an excellent technique that permits one to obtain details of lateral electronic distribution across the sample. It was found that Cu target power influences the electronic distribution and produces different phases such as Cu 2 Te and CdO.

Cytotoxicity Evaluation of Anatase and Rutile TiO₂ Thin Films on CHO-K1 Cells in Vitro.

Science.gov (United States)

Cervantes, Blanca; López-Huerta, Francisco; Vega, Rosario; Hernández-Torres, Julián; García-González, Leandro; Salceda, Emilio; Herrera-May, Agustín L; Soto, Enrique

2016-07-26

Cytotoxicity of titanium dioxide (TiO₂) thin films on Chinese hamster ovary (CHO-K1) cells was evaluated after 24, 48 and 72 h of culture. The TiO₂ thin films were deposited using direct current magnetron sputtering. These films were post-deposition annealed at different temperatures (300, 500 and 800 °C) toward the anatase to rutile phase transformation. The root-mean-square (RMS) surface roughness of TiO₂ films went from 2.8 to 8.08 nm when the annealing temperature was increased from 300 to 800 °C. Field emission scanning electron microscopy (FESEM) results showed that the TiO₂ films' thickness values fell within the nanometer range (290-310 nm). Based on the results of the tetrazolium dye and trypan blue assays, we found that TiO₂ thin films showed no cytotoxicity after the aforementioned culture times at which cell viability was greater than 98%. Independently of the annealing temperature of the TiO₂ thin films, the number of CHO-K1 cells on the control substrate and on all TiO₂ thin films was greater after 48 or 72 h than it was after 24 h; the highest cell survival rate was observed in TiO₂ films annealed at 800 °C. These results indicate that TiO₂ thin films do not affect mitochondrial function and proliferation of CHO-K1 cells, and back up the use of TiO₂ thin films in biomedical science.

Tungsten oxide proton conducting films for low-voltage transparent oxide-based thin-film transistors

International Nuclear Information System (INIS)

Zhang, Hongliang; Wan, Qing; Wan, Changjin; Wu, Guodong; Zhu, Liqiang

2013-01-01

Tungsten oxide (WO x ) electrolyte films deposited by reactive magnetron sputtering showed a high room temperature proton conductivity of 1.38 × 10 −4 S/cm with a relative humidity of 60%. Low-voltage transparent W-doped indium-zinc-oxide thin-film transistors gated by WO x -based electrolytes were self-assembled on glass substrates by one mask diffraction method. Enhancement mode operation with a large current on/off ratio of 4.7 × 10 6 , a low subthreshold swing of 108 mV/decade, and a high field-effect mobility 42.6 cm 2 /V s was realized. Our results demonstrated that WO x -based proton conducting films were promising gate dielectric candidates for portable low-voltage oxide-based devices.

Low-temperature preparation of rutile-type TiO2 thin films for optical coatings by aluminum doping

Science.gov (United States)

Ishii, Akihiro; Kobayashi, Kosei; Oikawa, Itaru; Kamegawa, Atsunori; Imura, Masaaki; Kanai, Toshimasa; Takamura, Hitoshi

2017-08-01

A rutile-type TiO2 thin film with a high refractive index (n), a low extinction coefficient (k) and small surface roughness (Ra) is required for use in a variety of optical coatings to improve the controllability of the reflection spectrum. In this study, Al-doped TiO2 thin films were prepared by pulsed laser deposition, and the effects of Al doping on their phases, optical properties, surface roughness and nanoscale microstructure, including Al distribution, were investigated. By doping 5 and 10 mol%Al, rutile-type TiO2 was successfully prepared under a PO2 of 0.5 Pa at 350-600 °C. The nanoscale phase separation in the Al-doped TiO2 thin films plays an important role in the formation of the rutile phase. The 10 mol%Al-doped rutile-type TiO2 thin film deposited at 350 °C showed excellent optical properties of n ≈ 3.05, k ≈ 0.01 (at λ = 400 nm) and negligible surface roughness, at Ra ≈ 0.8 nm. The advantages of the superior optical properties and small surface roughness of the 10 mol%Al-doped TiO2 thin film were confirmed by fabricating a ten-layered dielectric mirror.

Wetting phenomena in films of molecular hydrogen isotopes

International Nuclear Information System (INIS)

Albrecht, U.; Conradt, R.; Herminghaus, S.; Leiderer, P.

1996-01-01

We have investigated various aspects of the wetting behavior of hydrogen films (including the heavier isotopes) using surface plasmon resonance, light scattering, and photoelectron emission. Studies in the vicinity of the triple point (T 3 (H 2 )=13,96 K) confirmed the known >, and gave no indications for a prewetting transition in this range. At low temperatures (T 3 /3) the equilibrium film thickness reaches only a few monolayers. Thicker films, prepared by quench-condensation of H 2 gas at 1.5 K, undergo a dewetting process during annealing: most of the film material contracts to clusters, and in between the films thins down to its equilibrium thickness. This surface diffusion process is thermally activated, with an activation energy of 23 K (in the case of H 2 ). The dewetting kinetics has not revealed any indication for a surface-molten layer on the solid films at low temperatures, or for a superfluid component

Comparison of low-contrast detectability of computed radiography and screen/ film mammography systems

International Nuclear Information System (INIS)

Noriah Jamal; Kwan-Hoong Ng; McLean, D.; McLean, D.

2008-01-01

The objective of this study is to compare low-contrast detectability of computed radiography (CR) and screen/ film (SF) mammography systems. The Nijimegen contrast detail test object (CDMAM type 3.4) was imaged at 28 kV, in automatic exposure control mode separately. Six medical imaging physicists read each CDMAM phantom image. Contrast detail curves were plotted to compare low-contrast detectability of CR (soft copy and hard copy) and SF mammography systems. Effect of varying exposure parameters, namely kV, object position inside the breast phantom, and entrance surface exposure (ESE) on the contrast detail curve were also investigated using soft copy CR. The significance of the difference in contrast between CR and SF, and for each exposure parameter, was tested using non-parametric Kruskal-Wallis test. The low-contrast detectability of the CR (soft copy and hard copy) system was found to be not significantly different to that of the SF system (p> 0.05, Kruskal-Wallis test).For CR soft copy, no significant relationship (p>0.05, Kruskal-Wallis test) was seen for variation of kV, object position inside the breast phantom and ESE. This indicates that CR is comparable with SF for useful detection and visualization of low-contrast objects such as small low-contrast areas corresponding to breast pathology. (Author)

Characterization of nanoparticle and porous ultra low-k using positron beam

International Nuclear Information System (INIS)

Xu, Jun; Moxom, J.; Suzuki, R.; Ohdaira, T.; Mills, A.P. Jr.

2003-01-01

Nanoparticle materials are important because they exhibit unique properties due to size effects, quantum tunneling, and quantum confinement. As particle sizes are reduced to the nanometer scale, presence of vacancy clusters is expected to affect properties of nanomaterials. A combination of positron lifetime spectroscopy, which tells size of vacancy clusters, and coincidence Doppler broadening of annihilation radiation, which tell where vacancy clusters are located was used to study defect structures on nanomaterials of Au nanoparticles embedded in MgO. Vacancy clusters were found on the surfaces of Au nanoparticles. When the packing density between multilevel interconnects in microelectronic devices increases, a low dielectric constant material is needed to minimize RC delay. Porous oxide films are some of these new low-k materials that have been actively studied by the microelectronics industry. An ideal porous material would consist of a network of closed, small pores with narrow size distribution. However, large and interconnected pores, so called 'killer pores', result in high current leakage and poor mechanical strength. Clearly, characterization and understanding of pore size and interconnectivity are important to optimize the design of porous materials. Using positron beam, we have found that pore percolation in porous methyl-silsesquioxane (MSQ) films strongly depends on the molecular mass of pore generators. (author)

Optimization of the low-temperature MOCVD process for PZT thin films

CERN Document Server

Wang, C H; Choi, D J

2000-01-01

Pb(Zr sub X Ti sub 1 sub - sub X)O sub 3 (PZT) thin films of about 0.34 nm were successfully grown at a low temperature of 500 .deg. C by metalorganic chemical vapor deposition with a beta-diketonate complex of Pb(tmhd) sub 2 , zirconium t-butoxide, and titanium isopropoxide as source precursors. Ferroelectric capacitors of a Pt/PZT/Pt configuration were fabricated, and their structural and electrical properties were investigated as a function of the input Pb/(Zr+Ti) and Zr/(Zr+Ti) source ratios. The structure of the as-grown films at 500 .deg. C changed from tetragonal to pseudocubic with increasing the Zr/(Zr+Ti) ratio above an input Pb/(Zr+Ti) source ratio of 5.0 while a 2nd phase of ZrO sub 2 was only observed below Pb/(Zr+Ti) ratio of 5.0, regardless of the Zr/(Zr+Ti) ratio. The dielectric constant and loss of the PZT films were 150-1200 and 0.01-0.04 at 100 kHz, respectively, Leakage current densities decreased with increasing the Zr/(Zr+Ti) ratio. The process window for growing a single phase PZT is ve...

Influence of pH of spray solution on optoelectronic properties of cadmium oxide thin films

International Nuclear Information System (INIS)

Hodlur, R. M.; Rabinal, M. K.

2015-01-01

Highly conducting transparent cadmium oxide thin films were prepared by the conventional spray pyrolysis technique. The pH of the spray solution is varied by adding ammonia/hydrochloric acid. The effect of pH on the morphology, crystallinity and optoelectronic properties of these films is studied. The structural analysis showed all the films in the cubic phase. For the films with pH < 7 (acidic condition), the preferred orientation is along the (111) direction and for those with pH >7 (alkaline condition), the preferred orientation is along the (200) direction. A lowest resistivity of 9.9 × 10 −4 Ω·cm (with carrier concentration = 5.1 × 10 20 cm −3 , mobility = 12.4 cm 2 /(V·s)) is observed for pH ≈ 12. The resistivity is tuned almost by three orders of magnitude by controlling the bath pH with optical transmittance more than 70%. Thus, the electrical conductivity of CdO films could be easily tuned by simply varying the pH of the spray solution without compromising the optical transparency. (paper)

Ion beam deposited epitaxial thin silicon films

International Nuclear Information System (INIS)

Orrman-Rossiter, K.G.; Al-Bayati, A.H.; Armour, D.G.; Donnelly, S.E.; Berg, J.A. van den

1991-01-01

Deposition of thin films using low energy, mass-separated ion beams is a potentially important low temperature method of producing epitaxial layers. In these experiments silicon films were grown on Si (001) substrates using 10-200 eV 28 Si + and 30 Si + ions at substrate temperatures in the range 273-1073 K, under ultrahigh-vacuum conditions (deposition pressure -7 Pa). The film crystallinity was assessed in situ using medium energy ion scattering (MEIS). Films of crystallinity comparable to bulk samples were grown using 10-40 eV 28 Si + and 30 Si + ions at deposition temperatures in the range 623-823 K. These experiments confirmed the role of key experimental parameters such as ion energy, substrate temperature during deposition, and the surface treatment prior to deposition. It was found that a high temperature in situ anneal (1350-1450 K) gave the best results for epitaxial nucleation, whereas low energy (20-40 eV) Cl + ion bombardment resulted in amorphous film growth. The deposition energy for good epitaxial growth indicates that it is necessary to provide enough energy to induce local mobility but not to cause atomic displacements leading to the buildup of stable defects, e.g. divacancies, below the surface layer of the growing film. (orig.)

On some regularities of metal oxide solubility in molten CsI at T = 973 K

Energy Technology Data Exchange (ETDEWEB)

Cherginets, V.L., E-mail: v_cherginets@ukr.net [Institute for Scintillation Materials, National Academy of Sciences of Ukraine, Lenin Avenue, 60, Kharkov 61001 (Ukraine); National Technical University ' Kharkiv Polytechnical Institute' , 21 Frunze St., 61002 Kharkov (Ukraine); Rebrova, T.P.; Datsko, Yu.N.; Shtitelman, V.A. [Institute for Scintillation Materials, National Academy of Sciences of Ukraine, Lenin Avenue, 60, Kharkov 61001 (Ukraine); Bryleva, E.Yu. [State Scientific Organization STC ' Institute for Single Crystals' , National Academy of Sciences of Ukraine, Lenin Avenue, 60, Kharkov 61001 (Ukraine)

2011-08-15

Highlights: > CdO, ZnO, NiO, and EuO are insoluble in CsI melt at 973 K. > The oxide solubilities are lower than those in chloride melts. > The oxide solubilities reduce with the cation radius. > ZnO, NiO, and EuO are suitable for scavenging CsO from oxide ion traces. - Abstract: Solubility products of CdO (pK{sub s,CdO} = 6.80 {+-} 0.2), ZnO (pK{sub s,ZnO} = 10.0 {+-} 0.5), NiO (pK{sub s,NiO} = 11.2 {+-} 0.2) and EuO (pK{sub s,EuO} = 13.1 {+-} 0.2) in molten CsI at T = 973 K are determined by potentiometric titration of (0.02 to 0.03) mol . kg{sup -1} solutions of the corresponding metal chlorides by strong base (KOH) using a membrane oxygen electrode Pt(O{sub 2})|ZrO{sub 2}(Y{sub 2}O{sub 3}) as an indicator. On the basis of pK{sub s,MeO} values, all the oxides studied are referred to practically insoluble in molten CsI. The values of the oxide solubility in CsI melt are lower than the corresponding values in molten alkali metal chlorides. This can be explained by 'softer' basic properties of I{sup -} as compared with Cl{sup -} in the frames of the Pearson 'hard' and 'soft' acid-base concept. In the oxide samples studied, the values of the solubility fall with the decreasing cation radius. The correlation between pK{sub s,MeO} and the polarizing action by Goldshmidt (Zr{sub Me{sup 2+}}{sup -2}) of the cation is practically linear and may be proposed for estimation of the solubility of s- and d- element oxides in molten CsI on the basis of their cation radii.

Oxidation of ruthenium thin films using atomic oxygen

Energy Technology Data Exchange (ETDEWEB)

McCoy, A.P.; Bogan, J.; Brady, A.; Hughes, G.

2015-12-31

In this study, the use of atomic oxygen to oxidise ruthenium thin films is assessed. Atomic layer deposited (ALD) ruthenium thin films (~ 3 nm) were exposed to varying amounts of atomic oxygen and the results were compared to the impact of exposures to molecular oxygen. X-ray photoelectron spectroscopy studies reveal substantial oxidation of metallic ruthenium films to RuO{sub 2} at exposures as low as ~ 10{sup 2} L at 575 K when atomic oxygen was used. Higher exposures of molecular oxygen resulted in no metal oxidation highlighting the benefits of using atomic oxygen to form RuO{sub 2}. Additionally, the partial oxidation of these ruthenium films occurred at temperatures as low as 293 K (room temperature) in an atomic oxygen environment. - Highlights: • X-ray photoelectron spectroscopy study of the oxidation of Ru thin films • Oxidation of Ru thin films using atomic oxygen • Comparison between atomic oxygen and molecular oxygen treatments on Ru thin films • Fully oxidised RuO{sub 2} thin films formed with low exposures to atomic oxygen.

Thermal stability of pulsed laser deposited iridium oxide thin films at low oxygen atmosphere

Science.gov (United States)

Gong, Yansheng; Wang, Chuanbin; Shen, Qiang; Zhang, Lianmeng

2013-11-01

Iridium oxide (IrO2) thin films have been regarded as a leading candidate for bottom electrode and diffusion barrier of ferroelectric capacitors, some process related issues need to be considered before integrating ferroelectric capacitors into memory cells. This paper presents the thermal stability of pulsed laser deposited IrO2 thin films at low oxygen atmosphere. Emphasis was given on the effect of post-deposition annealing temperature at different oxygen pressure (PO2) on the crystal structure, surface morphology, electrical resistivity, carrier concentration and mobility of IrO2 thin films. The results showed that the thermal stability of IrO2 thin films was strongly dependent on the oxygen pressure and annealing temperature. IrO2 thin films can stably exist below 923 K at PO2 = 1 Pa, which had a higher stability than the previous reported results. The surface morphology of IrO2 thin films depended on PO2 and annealing temperature, showing a flat and uniform surface for the annealed films. Electrical properties were found to be sensitive to both the annealing temperature and oxygen pressure. The room-temperature resistivity of IrO2 thin films with a value of 49-58 μΩ cm increased with annealing temperature at PO2 = 1 Pa. The thermal stability of IrO2 thin films as a function of oxygen pressure and annealing temperature was almost consistent with thermodynamic calculation.

Electro-hydrodynamic spray synthesis and low temperature spectroscopic characterization of Perovskite thin films

Science.gov (United States)

Sarang, Som; Ishihara, Hidetaka; Tung, Vincent; Ghosh, Sayantani

Utilizing a Marangoni flow inspired electrospraying technique, we synthesize hybrid perovskite (PVSK) thin films with broad absorption spectrum and high crystallinity. The precursor solvents are electrosprayed onto an indium tin oxide (ITO) substrate, resulting in a gradient force developing between the droplet surface and the bulk due to the varying vapor pressure in the bi-solvent system. This gradient force helps the droplets propagate and merge with surrounding ones, forming a uniform thin film with excellent morphological and topological characteristics, as evident from the average power conversion efficiency (PCE) of 16%. In parallel, we use low temperature static and dynamic photoluminescence spectroscopy to probe the grain boundaries and defects in the synthesized PVSK thin films. At 120 K, the emergence of the low temperature orthorhombic phase is accompanied by reduction in lifetimes by an order of magnitude, a result attributed to charge transfer between the orthorhombic and tetragonal domains, as well as due to a crossover from free charge carrier to excitonic recombination. Our fabrication technique and optical studies help in advancement of PVSK based technology by providing unique insights into the fundamental physics of these novel materials. This research was supported by National Aeronautics and Space administration (NASA) Grant No: NNX15AQ01A.

Low operating voltage InGaZnO thin-film transistors based on Al2O3 high-k dielectrics fabricated using pulsed laser deposition

International Nuclear Information System (INIS)

Geng, G. Z.; Liu, G. X.; Zhang, Q.; Shan, F. K.; Lee, W. J.; Shin, B. C.; Cho, C. R.

2014-01-01

Low-voltage-driven amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) with an Al 2 O 3 dielectric were fabricated on a Si substrate by using pulsed laser deposition. Both Al 2 O 3 and IGZO thin films are amorphous, and the thin films have very smooth surfaces. The Al 2 O 3 gate dielectric exhibits a very low leakage current density of 1.3 x 10 -8 A/cm 2 at 5 V and a high capacitance density of 60.9 nF/cm 2 . The IGZO TFT with a structure of Ni/IGZO/Al 2 O 3 /Si exhibits high performance with a low threshold voltage of 1.18 V, a high field effect mobility of 20.25 cm 2 V -1 s -1 , an ultra small subthreshold swing of 87 mV/decade, and a high on/off current ratio of 3 x 10 7 .

Systematic discrepancies in Monte Carlo predictions of k-ratios emitted from thin films on substrates

International Nuclear Information System (INIS)

Statham, P; Llovet, X; Duncumb, P

2012-01-01

We have assessed the reliability of different Monte Carlo simulation programmes using the two available Bastin-Heijligers databases of thin-film measurements by EPMA. The MC simulation programmes tested include Curgenven-Duncumb MSMC, NISTMonte, Casino and PENELOPE. Plots of the ratio of calculated to measured k-ratios ('k calc /k meas ') against various parameters reveal error trends that are not apparent in simple error histograms. The results indicate that the MC programmes perform quite differently on the same dataset. However, they appear to show a similar pronounced trend with a 'hockey stick' shape in the 'k calc /k meas versus k meas ' plots. The most sophisticated programme PENELOPE gives the closest correspondence with experiment but still shows a tendency to underestimate experimental k-ratios by 10 % for films that are thin compared to the electron range. We have investigated potential causes for this systematic behaviour and extended the study to data not collected by Bastin and Heijligers.

Growth and characterization of MMA/SiO2 hybrid low-k thin films for ...

Indian Academy of Sciences (India)

We have successfully incorporated MMA monomer and eliminated the polymerization step to lower the dielectric constant of deposited thin film. The presence of peak of C=C bond in Fourier transform infrared (FTIR) spectra and carbon peak in energy dispersive (EDAX) spectra confirms the incorporation of carbon in the film ...

Comparison of the quality of the chest film between digital radiography and conventional high kV radiography

International Nuclear Information System (INIS)

Zeng Qingsi; Cen Renli; Chen Ling; He Jianxun; Lin Hanfei

2003-01-01

Objective: To evaluate the quality and usefulness of direct digital radiography system in roentgenogram of chest in clinical practice. Methods: 1000 cases of chest roentgenograms with digital radiography and high kV conventional radiography were selected for analysis by 3 senior radiologists. Results: 1. With digital radiography system, the quality of chest film was assessed as grade A in 50.6%, grade B in 38.5%, grade C in 10.9%, and no waste film. 2. With conventional high kV radiography, the quality of chest film was assessed as grade A in 41.1%, grade B in 44.1%, grade C in 13.3%, and waste film in 1.5%. The direct digital radiography was statistically superior to the conventional high kV radiography. 3. The fine structure of the lungs could be revealed in 100.0% of chest roentgenogram with direct digital radiograph system, which was significantly higher than that acquired with the conventional high KV radiography (78.6%, P < 0.001). Conclusion: Direct digital radiography could provide the chest film with better quality than that with the conventional high kV radiography. The direct digital radiography system is easy to operate, fast in capturing imaging and could provide post-processing techniques, which will facilitate the accurate diagnosis of chest radiography

k-Carrageenan/poly vinyl pyrollidone/polyethylene glycol/silver nanoparticles film for biomedical application.

Science.gov (United States)

Fouda, Moustafa M G; El-Aassar, M R; El Fawal, G F; Hafez, Elsayed E; Masry, Saad Hamdy Daif; Abdel-Megeed, Ahmed

2015-03-01

Biopolymer composite film containing k-carrageenan (KC), polyvinyl pyrrolidone (PVP), and polyethylene glycol (PEG) was formulated by dissolving KC and PVP in water containing PEG. Silver nanoparticles (AgNPs), was produced by Honeybee and added to solution. Finally, all solutions were poured onto dishes and dried overnight at 40°C to form the final films. Tensile strength (TS) and elongation (E %) is evaluated. The water contact angle is inspected. Thermal properties (TGA) and swelling behavior for water were considered. Fungal activity is also examined. Morphology of all films was also explored using scanning electron microscope. AgNPs induced significant hydrophilicity to KC-PVP-PEG film with contact angle of 41.6 and 34.7 for KC-PVP-PEG-AgNPs. Films with AgNPs exhibited higher thermal stability and strength properties than other films without. Films with AgNPs explore lower swelling behavior than other films without. Both SEM and EDX proved the deposition of AgNPs on the surface of films. Films with AgNPs showed higher activity against pathogenic fungi compared with the chemical fungicide; fluconazole. Copyright © 2014 Elsevier B.V. All rights reserved.

Low temperature composite bolometers using RuO2 films as a thermistor

International Nuclear Information System (INIS)

Chapellier, M.; Rasmussen, F.B.

1989-01-01

Results from a massive composite bolometer made of a sapphire crystal and ruthenium oxide films are presented. The properties of such RuO 2 films, in the temperature range [50 mK, 200 mK] have been studied. Individual particle detections, using an 241 Am source, have been used to calibrate the system in this temperature interval. Improvements in the performances of such detectors lead to consider them as realistic candidates for the detection of Dark Matter

Thermal, mechanical and permeation properties of gamma-irradiated multilayer food packaging films containing a buried layer of recycled low-density polyethylene

International Nuclear Information System (INIS)

Chytiri, Stavroula; Goulas, Antonios E.; Riganakos, Kyriakos A.; Kontominas, Michael G.

2006-01-01

The effect of gamma radiation (doses 5-60kGy) on the thermal, mechanical and permeation properties, as well as on IR-spectra of experimental five-layer food packaging films were studied. Films contained a middle buried layer of recycled low-density polyethylene (LDPE) comprising 25-50% by weight of the multilayer structure. Representative films containing 100% virgin LDPE as the buried layer were taken as controls. Results showed that the percentage of recycled LDPE in the multilayer structure did not significantly (p<0.05) affect the melting temperature, tensile strength, percent elongation at break, Young's modulus, oxygen, carbon dioxide and water vapour transmission rate values and the IR-spectra of the non-irradiated and irradiated multilayer films. Irradiation (mainly the higher dose of 60kGy) induced certain small, but statistically significant (p<0.05) differences in the mechanical properties of multilayer films (with or without recycled LDPE layer) while no significant differences were observed in the thermal properties and in the gas and water vapour permeability of multilayer films. The above findings are discussed in relation to the good quality of the pre-consumer scrap used in the present study

Film analysis employing subtarget effect using 355 nm Nd-YAG laser-induced plasma at low pressure

Energy Technology Data Exchange (ETDEWEB)

Hedwig, Rinda [Department of Computer Engineering, Faculty of Computer Studies, Bina Nusantara University, 9 K.H. Syahdan, Jakarta Barat 11480 (Indonesia); Budi, Wahyu Setia [Department of Physics, Faculty of Mathematics and Natural Sciences, Diponegoro University, Tembalang Campus, Semarang, Central Java (Indonesia); Abdulmadjid, Syahrun Nur [Department of Physics, Faculty of Mathematics and Natural Sciences, Syiah Kuala University, Darussalam, Banda Aceh, Nanggroe Aceh Darussalam (Indonesia); Pardede, Marincan [Research Center of Maju Makmur Mandiri Foundation, 40 Srengseng Raya, Kembangan, Jakarta Barat 11630 (Indonesia); Suliyanti, Maria Margaretha [Research Center of Maju Makmur Mandiri Foundation, 40 Srengseng Raya, Kembangan, Jakarta Barat 11630 (Indonesia); Lie, Tjung Jie [Research Center of Maju Makmur Mandiri Foundation, 40 Srengseng Raya, Kembangan, Jakarta Barat 11630 (Indonesia); Kurniawan, Davy Putra [Research Center of Maju Makmur Mandiri Foundation, 40 Srengseng Raya, Kembangan, Jakarta Barat 11630 (Indonesia); Kurniawan, Koo Hendrik [Research Center of Maju Makmur Mandiri Foundation, 40 Srengseng Raya, Kembangan, Jakarta Barat 11630 (Indonesia)]. E-mail: kurnia18@cbn.net.id; Kagawa, Kiichiro [Department of Physics, Faculty of Education and Regional Studies, 9-1 bunkyo 3-chome, Fukui 910-8507 (Japan); Tjia, May On [Department of Physics, Faculty of Mathematics and Natural Sciences, Bandung Institute of Technology, 10 Ganesha, Bandung 40132 (Indonesia)

2006-12-15

The applicability of spectrochemical analysis for liquid and powder samples of minute amount in the form of thin film was investigated using ultraviolet Nd-YAG laser (355 nm) and low-pressure ambient air. A variety of organic samples such as commercial black ink usually used for stamp pad, ginseng extract, human blood, liquid milk and ginseng powder was prepared as film deposited on the surface of an appropriate hard substrate such as copper plate or glass slide. It was demonstrated that in all cases studied, good quality spectra were obtained with very low background and free from undesirable contamination by the substrate elements, featuring ppm or even sub-ppm sensitivity and worthy of application for quantitative analysis of organic samples. The proper preparation of the films was found to be crucial in achieving the high quality spectra. It was further shown that much inferior results were obtained when the atmospheric-pressure (101 kPa) operating condition of laser-induced breakdown spectroscopy or the fundamental wavelength of the Nd-YAG laser was employed due to the excessive or improper laser ablation process.

Film analysis employing subtarget effect using 355 nm Nd-YAG laser-induced plasma at low pressure

International Nuclear Information System (INIS)

Hedwig, Rinda; Budi, Wahyu Setia; Abdulmadjid, Syahrun Nur; Pardede, Marincan; Suliyanti, Maria Margaretha; Lie, Tjung Jie; Kurniawan, Davy Putra; Kurniawan, Koo Hendrik; Kagawa, Kiichiro; Tjia, May On

2006-01-01

The applicability of spectrochemical analysis for liquid and powder samples of minute amount in the form of thin film was investigated using ultraviolet Nd-YAG laser (355 nm) and low-pressure ambient air. A variety of organic samples such as commercial black ink usually used for stamp pad, ginseng extract, human blood, liquid milk and ginseng powder was prepared as film deposited on the surface of an appropriate hard substrate such as copper plate or glass slide. It was demonstrated that in all cases studied, good quality spectra were obtained with very low background and free from undesirable contamination by the substrate elements, featuring ppm or even sub-ppm sensitivity and worthy of application for quantitative analysis of organic samples. The proper preparation of the films was found to be crucial in achieving the high quality spectra. It was further shown that much inferior results were obtained when the atmospheric-pressure (101 kPa) operating condition of laser-induced breakdown spectroscopy or the fundamental wavelength of the Nd-YAG laser was employed due to the excessive or improper laser ablation process

Superconductivity in transparent zinc-doped In2O3 films having low carrier density

Directory of Open Access Journals (Sweden)

Kazumasa Makise, Nobuhito Kokubo, Satoshi Takada, Takashi Yamaguti, Syunsuke Ogura, Kazumasa Yamada, Bunjyu Shinozaki, Koki Yano, Kazuyoshi Inoue and Hiroaki Nakamura

2008-01-01

Full Text Available Thin polycrystalline zinc-doped indium oxide (In2O3–ZnO films were prepared by post-annealing amorphous films with various weight concentrations x of ZnO in the range 0≤x ≤0.06. We have studied the dependences of the resistivity ρ and Hall coefficient on temperature T and magnetic field H in the range 0.5≤T ≤300 K, H≤6 Tfor 350 nm films annealed in air. Films with 0≤x≤0.03 show the superconducting resistive transition. The transition temperature Tc is below 3.3 K and the carrier density n is about 1025–1026 m−3. The annealed In2O3–ZnO films were examined by transmission electron microscopy and x-ray diffraction analysis revealing that the crystallinity of the films depends on the annealing time. We studied the upper critical magnetic field Hc2 (T for the film with x = 0.01. From the slope of dHc2 /dT, we obtain the coherence length ξ (0 ≈ 10 nm at T = 0 K and a coefficient of electronic heat capacity that is small compared with those of other oxide materials.

Transparent Low Electrostatic Charge Films Based on Carbon Nanotubes and Polypropylene. Homopolymer Cast Films

Directory of Open Access Journals (Sweden)

Zoe Vineth Quiñones-Jurado

2018-01-01

Full Text Available Use of multi-wall carbon nanotubes (MWCNTs in external layers (A-layers of ABA-trilayer polypropylene films was investigated, with the purpose of determining intrinsic and extrinsic factors that could lead to antistatic behavior of transparent films. The incorporation of 0.01, 0.1, and 1 wt % of MWCTNs in the A-layers was done by dilution through the masterbatch method. Masterbatches were fabricated using isotactic polypropylene (iPP with different melt flow indexes 2.5, 34, and 1200 g/10 min, and using different ultrasound assist methods. It was found that films containing MWCNTs show surface electrical resistivity of 1012 and 1016 Ω/sq, regardless of the iPP melt flow index (MFI and masterbatch fabrication method. However, electrostatic charge was found to depend upon the iPP MFI, the ultrasound assist method and MWCNT concentration. A percolation electron transport mechanism was determined most likely responsible for this behavior. Optical properties for films containing MWCNTs do not show significant differences compared to the reference film at MWCNT concentrations below 0.1 wt %. However, an enhancement in brightness was observed, and it was attributed to ordered iPP molecules wrapping the MWCNTs. Bright transparent films with low electrostatic charge were obtained even for MWCNTs concentrations as low as 0.01 wt %.

First observation of the decay B{sub s}{sup 0}{yields}K{sup Low-Asterisk 0}K{sup Macron Low-Asterisk 0}

Energy Technology Data Exchange (ETDEWEB)

Aaij, R. [Nikhef National Institute for Subatomic Physics, Amsterdam (Netherlands); Abellan Beteta, C. [Universitat de Barcelona, Barcelona (Spain); Adeva, B., E-mail: Bernardo.Adeva@usc.es [Universidad de Santiago de Compostela, Santiago de Compostela (Spain); Adinolfi, M. [H.H. Wills Physics Laboratory, University of Bristol, Bristol (United Kingdom); Adrover, C. [CPPM, Aix-Marseille Universite, CNRS/IN2P3, Marseille (France); Affolder, A. [Oliver Lodge Laboratory, University of Liverpool, Liverpool (United Kingdom); Ajaltouni, Z. [Clermont Universite, Universite Blaise Pascal, CNRS/IN2P3, LPC, Clermont-Ferrand (France); Albrecht, J.; Alessio, F. [European Organization for Nuclear Research (CERN), Geneva (Switzerland); Alexander, M. [School of Physics and Astronomy, University of Glasgow, Glasgow (United Kingdom); Alkhazov, G. [Petersburg Nuclear Physics Institute (PNPI), Gatchina (Russian Federation); Alvarez Cartelle, P. [Universidad de Santiago de Compostela, Santiago de Compostela (Spain); Alves, A.A. [Sezione INFN di Roma La Sapienza, Roma (Italy); Amato, S. [Universidade Federal do Rio de Janeiro (UFRJ), Rio de Janeiro (Brazil); Amhis, Y. [Ecole Polytechnique Federale de Lausanne (EPFL), Lausanne (Switzerland); Anderson, J. [Physik-Institut, Universitaet Zuerich, Zuerich (Switzerland); Appleby, R.B. [School of Physics and Astronomy, University of Manchester, Manchester (United Kingdom); Aquines Gutierrez, O. [Max-Planck-Institut fuer Kernphysik (MPIK), Heidelberg (Germany); Archilli, F. [Laboratori Nazionali dell' INFN di Frascati, Frascati (Italy); European Organization for Nuclear Research (CERN), Geneva (Switzerland); Collaboration: LHCb Collaboration; and others

2012-03-13

The first observation of the decay B{sub s}{sup 0}{yields}K{sup Low-Asterisk 0}K{sup Macron Low-Asterisk 0} is reported using 35 pb{sup -1} of data collected by LHCb in proton-proton collisions at a centre-of-mass energy of 7 TeV. A total of 49.8{+-}7.5B{sub s}{sup 0}{yields}(K{sup +}{pi}{sup -})(K{sup -}{pi}{sup +}) events are observed within {+-}50 MeV/c{sup 2} of the B{sub s}{sup 0} mass and 746 MeV/c{sup 2}K{pi}}<1046 MeV/c{sup 2}, mostly coming from a resonant B{sub s}{sup 0}{yields}K{sup Low-Asterisk 0}K{sup Macron Low-Asterisk 0} signal. The branching fraction and the CP-averaged K{sup Low-Asterisk 0} longitudinal polarization fraction are measured to be B(B{sub s}{sup 0}{yields}K{sup Low-Asterisk 0}K{sup Macron Low-Asterisk 0})=(2.81{+-}0.46(stat.){+-}0.45(syst.){+-}0.34(f{sub s}/f{sub d})) Multiplication-Sign 10{sup -5} and f{sub L}=0.31{+-}0.12(stat.){+-}0.04(syst.).

Low-Temperature Band Transport and Impact of Contact Resistance in Organic Field-Effect Transistors Based on Single-Crystal Films of Ph-BTBT-C10

Science.gov (United States)

Cho, Joung-min; Mori, Takehiko

2016-06-01

Transistors based on single-crystal films of 2-decyl-7-phenyl-[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-10) fabricated using the blade-coating method are investigated by the four-probe method down to low temperatures. The four-probe mobility is as large as 18 cm2/V s at room temperature, and increases to 45 cm2/V s at 80 K. At 60 K the two-probe mobility drops abruptly by about 50%, but the mobility drop is mostly attributed to the increase of the source resistance. The carrier transport in the present single-crystal film is regarded as essentially bandlike down to 30 K.

Microwave properties of HTS films

International Nuclear Information System (INIS)

Cooke, D.W.; Arendt, P.M.; Grey, E.R.; Muenchausen, R.E.; Bennett, B.L.; Foltyn, S.R.; Estler, R.C.; Wu, X.D.; Reeves, G.A.; Elliott, N.E.; Brown, D.R.; Portis, A.M.; Taber, R.C.; Mogrocampero, A.

1990-01-01

High-frequency applications of high- temperature superconductors generally fall into two categories: 1) devices that require low values (relative to Cu) of surface resistance R S in ambient surface magnetic fields H rf ; and 2) devices that require low R S in modest fields (H rf ∼ 250 Oe). Moreover, many applications can be realized with small- surface-area films (∼ 1 cm 2 ) whereas others require larger areas - radiofrequency (rf) cavities, for example. Regardless of the application, the potential of HTS films is predicted on satisfying one or both of the above-stated requirements. The authors have measured the surface resistance of small-area (1 cm 2 ) and large-area (6.5 cm 2 ) YBa 2 Cu 3 O 7 (YBCO) films that have been laser ablated onto LaA ell O 3 substrates, large-area (5.1 cm 2 YBCO films that have been e-beam deposited onto LaA ell O 3 , and large-area (11.4 cm 2 ) T ell-based films that have been magnetron sputtered onto metallic substrates. The best R S values are obtained from the 1-cm 2 laser-ablated films; they are 40 μΩ and 340 μΩ at 4 K And 77 K, respectively (ω/2π = 10 GHz). Comparable values for Cu are 6 and 13 mΩ, respectively. Large-area T ell-based films yield typical R S values of 4 mΩ and 14 mΩ at 4 K and 77 K, respectively (ω/2π = 18 GHz). The dependence of R S on H rf for these films indicates that surface fields as large as 55 Oe can be achieved with R S increasing only by a factor of 10. This field dependence is associated with c-axis texturing

Low-Concentration Indium Doping in Solution-Processed Zinc Oxide Films for Thin-Film Transistors

Directory of Open Access Journals (Sweden)

Xue Zhang

2017-07-01

Full Text Available We investigated the influence of low-concentration indium (In doping on the chemical and structural properties of solution-processed zinc oxide (ZnO films and the electrical characteristics of bottom-gate/top-contact In-doped ZnO thin-film transistors (TFTs. The thermogravimetry and differential scanning calorimetry analysis results showed that thermal annealing at 400 °C for 40 min produces In-doped ZnO films. As the In content of ZnO films was increased from 1% to 9%, the metal-oxygen bonding increased from 5.56% to 71.33%, while the metal-hydroxyl bonding decreased from 72.03% to 9.63%. The X-ray diffraction peaks and field-emission scanning microscope images of the ZnO films with different In concentrations revealed a better crystalline quality and reduced grain size of the solution-processed ZnO thin films. The thickness of the In-doped ZnO films also increased when the In content was increased up to 5%; however, the thickness decreased on further increasing the In content. The field-effect mobility and on/off current ratio of In-doped ZnO TFTs were notably affected by any change in the In concentration. Considering the overall TFT performance, the optimal In doping concentration in the solution-processed ZnO semiconductor was determined to be 5% in this study. These results suggest that low-concentration In incorporation is crucial for modulating the morphological characteristics of solution-processed ZnO thin films and the TFT performance.

Rare earth-based low-index films for IR and multispectral thin film solutions

Science.gov (United States)

Stolze, Markus; Neff, Joe; Waibel, Friedrich

2017-10-01

Non-thoriated rare-earth fluoride based coating solutions involving DyF3 and YbF3 based films as well as non-wetting fluorohydrocarbon cap layers on such films, have been deposited, analyzed and partly optimized. Intermediate results for DyF3 based films from ion assisted e-gun deposition with O2 and N2 alone and as base for the non-wetting to-player as well as for YbF3 starting material with or without admixtures of CaF2 are discussed for low-loss LWIR and multispectral solutions.

Characterization of fluorinated silica thin films with ultra-low refractive index deposited at low temperature

Energy Technology Data Exchange (ETDEWEB)

Abbasi-Firouzjah, Marzieh [Semnan Science and Technology Park, 3614933578, Shahrood (Iran, Islamic Republic of); Shokri, Babak, E-mail: b-shokri@sbu.ac.ir [Laser & Plasma Research Institute, Shahid Beheshti University, G.C., Evin, Tehran 1983963113 (Iran, Islamic Republic of); Physics Department, Shahid Beheshti University, G.C., Evin, Tehran 1983963113 (Iran, Islamic Republic of)

2015-02-27

Structural and optical properties of low refractive index fluorinated silica (SiO{sub x}C{sub y}F{sub z}) films were investigated. The films were deposited on p-type silicon and polycarbonate substrates by radio frequency plasma enhanced chemical vapor deposition method at low temperatures. A mixture of tetraethoxysilane vapor, oxygen, and CF{sub 4} was used for deposition of the films. The influence of oxygen flow rate on the elemental compositions, chemical bonding states and surface roughness of the films was studied using energy dispersive X-ray analyzer, Fourier transform infrared spectroscopy in reflectance mode and atomic force microscopy, respectively. Effects of chemical bonds of the film matrix on optical properties and chemical stability were discussed. Energy dispersive spectroscopy showed high fluorine content in the SiO{sub x}C{sub y}F{sub z} film matrix which is in the range of 7.6–11.3%. It was concluded that in fluorine content lower than a certain limit, chemical stability of the film enhances, while higher contents of fluorine heighten moisture absorption followed by increasing refractive index. All of the deposited films were highly transparent. Finally, it was found that the refractive index of the SiO{sub x}C{sub y}F{sub z} film was continuously decreased with the increase of the O{sub 2} flow rate down to the minimum value of 1.16 ± 0.01 (at 632.8 nm) having the most ordered and nano-void structure and the least organic impurities. This sample also had the most chemical stability against moisture absorption. - Highlights: • Low deposition temperature and organic precursor led to higher film fluorination. • High fluorine and nanovoid structure led to drastic decrease in the refractive index. • Silica based thin film with ultralow refractive index of 1.16 was produced. • The produced ultralow-n film is highly stable against moisture absorption.

Effects of ultraviolet irradiation treatment on low-k SiOC(-H) ultra-thin films deposited by using TMS/O2 PEALD

International Nuclear Information System (INIS)

Kim, Changyoung; Woo, Jongkwan; Choi, Chikyu; Navamathavan, R.

2012-01-01

We report on the electrical characteristics for the metal-insulator-semiconductor (MIS) structure of low-dielectric-constant SiOC(-H) films. The SiOC(-H) thin films were deposited on p-Si(100) substrates by using a plasma-enhanced atomic layer deposition (PEALD) system. To improve the structural and the electrical characteristics, we post-treated the SiOC(-H) films deposited using PEALD with ultraviolet (UV) irradiation for various time intervals. The radical intensities in the bulk plasma were observed to be influenced strongly by the radio-frequency (rf) power. A complete dissociation of the trimethylsilane (TMS) precursor took place for rf powers greater than 300 W. As the UV treatment time was increased, the bonding structure of the SiOC(-H) film clearly separated to Si-O-Si and Si-O-C bonds. Also, the fixed charge density and the interface state density on the SiOC(-H)/p-Si(100) interface decreased as the UV treatment time was increased to 6 min. Therefore, we were able to minimize the defects and to reduce the interface charge by adjusting the UV dose.

Growth of highly transparent Cd{sub x}Zn{sub 1−x}O (CZO) thin films: Structural and optical studies

Energy Technology Data Exchange (ETDEWEB)

Gautam, Naina, E-mail: nainagtm@gmail.com [Department of Electronic Science, University of Delhi South Campus, New Delhi 110023 (India); Singh, Fouran, E-mail: fouran@gmail.com [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Gautam, Subodh K. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Singh, R.G. [Department of Physics, Bhagini Nivedita College, Delhi University, Delhi 110043 (India); Ojha, S. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Kapoor, A. [Department of Electronic Science, University of Delhi South Campus, New Delhi 110023 (India)

2015-11-25

The deposition of Cd{sub x}Zn{sub 1−x}O thin films with different cadmium concentrations i.e., x = 0.0, 0.05, 0.20 by sol–gel spin coating is reported. The doping fraction of Cd in ZnO films was measured by Rutherford backscattering spectrometry (RBS), while the surface morphology was studied by scanning electron microscopy (SEM). Grazing incidence X-ray diffraction (GIXRD) study was carried out for the structural investigations and reveals hexagonal wurtzite structure with polycrystalline nature. The various structural parameters are calculated including the lattice constants ‘a’ and ‘c’, stress (σ), strain (ε) and internal parameter (u). For x = 0.20 Cd content, the formation of secondary phase of the cubic CdO at 33.12° (111) and 38.41° (200) is observed and this is further confirmed by micro-Raman studies, where the TO mode emerges at ∼261.5 cm{sup −1}. The basic wurtzite structure is maintained as ‘c/a’ ratio and internal parameter ‘u’ found to be closer to the ideal values. All the films are found to be highly transparent in the visible region and a bending of the near band edge (NBE) absorption is observed with Cd doping. It is further confirmed by calculating the Urbach energy (E{sub u}), which is found to be increased from 0.14 eV (for x = 0.0) to 0.26 eV (for x = 0.20) with maximum value for the lightly doped films i.e. x = 0.05. However, the optical band gap is found to decrease from 3.26 eV (for x = 0.0) to 3.08 eV (for x = 0.20). - Highlights: • High transparent Cd{sub x}Zn{sub 1−x}O (CZO) thin films with an average transparency of ∼85% in the visible region. • Band-gap tuning is achieved by Cd doping in ZnO. • Segregation of cubic rock-salt CdO phase upon high doping as confirmed by Micro-Raman and SEM investigations.

Cytotoxicity Evaluation of Anatase and Rutile TiO2 Thin Films on CHO-K1 Cells in Vitro

Directory of Open Access Journals (Sweden)

Blanca Cervantes

2016-07-01

Full Text Available Cytotoxicity of titanium dioxide (TiO2 thin films on Chinese hamster ovary (CHO-K1 cells was evaluated after 24, 48 and 72 h of culture. The TiO2 thin films were deposited using direct current magnetron sputtering. These films were post-deposition annealed at different temperatures (300, 500 and 800 °C toward the anatase to rutile phase transformation. The root-mean-square (RMS surface roughness of TiO2 films went from 2.8 to 8.08 nm when the annealing temperature was increased from 300 to 800 °C. Field emission scanning electron microscopy (FESEM results showed that the TiO2 films’ thickness values fell within the nanometer range (290–310 nm. Based on the results of the tetrazolium dye and trypan blue assays, we found that TiO2 thin films showed no cytotoxicity after the aforementioned culture times at which cell viability was greater than 98%. Independently of the annealing temperature of the TiO2 thin films, the number of CHO-K1 cells on the control substrate and on all TiO2 thin films was greater after 48 or 72 h than it was after 24 h; the highest cell survival rate was observed in TiO2 films annealed at 800 °C. These results indicate that TiO2 thin films do not affect mitochondrial function and proliferation of CHO-K1 cells, and back up the use of TiO2 thin films in biomedical science.

Cytotoxicity Evaluation of Anatase and Rutile TiO2 Thin Films on CHO-K1 Cells in Vitro

Science.gov (United States)

Cervantes, Blanca; López-Huerta, Francisco; Vega, Rosario; Hernández-Torres, Julián; García-González, Leandro; Salceda, Emilio; Herrera-May, Agustín L.; Soto, Enrique

2016-01-01

Cytotoxicity of titanium dioxide (TiO2) thin films on Chinese hamster ovary (CHO-K1) cells was evaluated after 24, 48 and 72 h of culture. The TiO2 thin films were deposited using direct current magnetron sputtering. These films were post-deposition annealed at different temperatures (300, 500 and 800 °C) toward the anatase to rutile phase transformation. The root-mean-square (RMS) surface roughness of TiO2 films went from 2.8 to 8.08 nm when the annealing temperature was increased from 300 to 800 °C. Field emission scanning electron microscopy (FESEM) results showed that the TiO2 films’ thickness values fell within the nanometer range (290–310 nm). Based on the results of the tetrazolium dye and trypan blue assays, we found that TiO2 thin films showed no cytotoxicity after the aforementioned culture times at which cell viability was greater than 98%. Independently of the annealing temperature of the TiO2 thin films, the number of CHO-K1 cells on the control substrate and on all TiO2 thin films was greater after 48 or 72 h than it was after 24 h; the highest cell survival rate was observed in TiO2 films annealed at 800 °C. These results indicate that TiO2 thin films do not affect mitochondrial function and proliferation of CHO-K1 cells, and back up the use of TiO2 thin films in biomedical science. PMID:28773740

Text Mining Untuk Analisis Sentimen Review Film Menggunakan Algoritma K-Means

Directory of Open Access Journals (Sweden)

Setyo Budi

2017-02-01

Full Text Available Kemudahan manusia didalam menggunakan website mengakibatkan bertambahnya dokumen teks yang berupa pendapat dan informasi. Dalam waktu yang lama dokumen teks akan bertambah besar. Text mining merupakan salah satu teknik yang digunakan untuk menggali kumpulan dokumen text sehingga dapat diambil intisarinya. Ada beberapa algoritma yang di gunakan untuk penggalian dokumen untuk analisis sentimen, salah satunya adalah K-Means. Didalam penelitian ini algoritma yang digunakan adalah K-Means. Hasil penelitian menunjukkan bahwa akurasi K-Means dengan dataset digunakan 300 positif dan 300 negatif  akurasinya 57.83%,  700 dokumen positif dan 700  negatif akurasinya 56.71%%, 1000 dokumen positif dan 1000  negatif akurasinya 50.40%%. Dari hasil pengujian disimpulkan bahwa semakin besar dataset yang digunakan semakin rendah akurasi K-Means.   Kata Kunci : Text Mining, Analisis Sentimen, K-Means, Review Film 

Pentacene based thin film transistors with high-k dielectric Nd2O3 as a gate insulator

International Nuclear Information System (INIS)

Sarma, R.; Saikia, D.

2010-01-01

We have investigated the pentacene based Organic Thin Film Transistors (OTFTs) with high-k dielectric Nd 2 O 3 . Use of high dielectric constant (high-k) gate insulator Nd 2 O 3 reduces the threshold voltage and sub threshold swing of the OTFTs. The calculated threshold voltage -2.2V and sub-threshold swing 1V/decade, current ON-OFF ratio is 1.7 X 10 4 and mobility is 0.13cm 2 /V.s. Pentacene film is deposited on Nd 2 O 3 surface using two step deposition method. Deposited pentacene film is found poly crystalline in nature. (author)

Influence of structural disorder on low-temperature behavior of penetration depth in electron-doped high-TC thin films

International Nuclear Information System (INIS)

Lanfredi, A.J.C.; Sergeenkov, S.; Araujo-Moreira, F.M.

2006-01-01

To probe the influence of structural disorder on low-temperature behavior of magnetic penetration depth, λ(T), in electron-doped high-T C superconductors, a comparative study of high-quality Pr 1.85 Ce 0.15 CuO 4 (PCCO) and Sm 1.85 Ce 0.15 CuO 4 (SCCO) thin films is presented. The λ(T) profiles are extracted from conductance-voltage data using a highly-sensitive home-made mutual-inductance technique. The obtained results confirm a d-wave pairing mechanism in both samples (with nodal gap parameter Δ 0 /k B T C =2.0 and 2.1 for PCCO and SCCO films, respectively), substantially modified by impurity scattering (which is more noticeable in less homogeneous SCCO films) at the lowest temperatures. More precisely, Δλ(T)=λ(T)-λ(0) is found to follow the Goldenfeld-Hirschfeld interpolation formulae Δλ(T)/λ(0)=AT 2 /(T+T 0 ) with T 0 =ln(2)k B Γ 1/2 Δ 0 1/2 being the crossover temperature which demarcates pure and impure scattering processes (T 0 /T C =0.13 and 0.26 for PCCO and SCCO films, respectively). The value of the extracted impurity scattering rate Γ correlates with the quality of our samples and is found to be much higher in less homogeneous films with lower T C

Structural and photocarrier radiometric characterization of Cu{sub x}(CdTe){sub y}O{sub z} thin films growth by reactive sputtering

Energy Technology Data Exchange (ETDEWEB)

Velazquez-Hernandez, R., E-mail: ruvel2@yahoo.com.m [Division de Investigacion y Posgrado, Facultad de Ingenieria, Universidad Autonoma de Queretaro, Cerro de las Campanas S/N, Queretaro, Qro., Mexico, C.P. 76010 (Mexico); Rojas-Rodriguez, I. [Universidad Tecnologica de Queretaro, Av. Pie de la Cuesta S/N, Sn. Pedrito Penuelas, Queretaro, Qro. Mexico (Mexico); Carmona-Rodriguez, J.; Jimenez-Sandoval, S. [Centro de Investigacion y de Estudios Avanzados del IPN, Unidad Queretaro, Apartado Postal 1-798, Queretaro, Qro., Mexico C.P.76001 (Mexico); Rodriguez-Garcia, M.E. [Departamento de Nanotecnologia, Centro de Fisica Aplicada y Tecnologia Avanzada, Universidad Nacional Autonoma de Mexico, Campus Juriqulla, Apartado Postal 1-1010, Queretaro, Qro. Mexico (Mexico)

2011-01-31

This research presents a structural and photocarrier radiometric (PCR) characterization of Cu{sub x}(CdTe){sub y}O{sub z} thin films grown using reactive radiofrequency co-sputtering. Electronic distribution induced by variations in dopant concentration as a function of the position was studied using photocarrier radiometric images. Optical and structural characterization of these thin films was carried out by using micro Raman spectroscopy and X-ray diffraction. Due to its nondestructive and noncontact characteristics, the PCR is an excellent technique that permits one to obtain details of lateral electronic distribution across the sample. It was found that Cu target power influences the electronic distribution and produces different phases such as Cu{sub 2}Te and CdO.

A 350 mK, 9 T scanning tunneling microscope for the study of superconducting thin films on insulating substrates and single crystals.

Science.gov (United States)

Kamlapure, Anand; Saraswat, Garima; Ganguli, Somesh Chandra; Bagwe, Vivas; Raychaudhuri, Pratap; Pai, Subash P

2013-12-01

We report the construction and performance of a low temperature, high field scanning tunneling microscope (STM) operating down to 350 mK and in magnetic fields up to 9 T, with thin film deposition and in situ single crystal cleaving capabilities. The main focus lies on the simple design of STM head and a sample holder design that allows us to get spectroscopic data on superconducting thin films grown in situ on insulating substrates. Other design details on sample transport, sample preparation chamber, and vibration isolation schemes are also described. We demonstrate the capability of our instrument through the atomic resolution imaging and spectroscopy on NbSe2 single crystal and spectroscopic maps obtained on homogeneously disordered NbN thin film.

Anomalous decrease of resistance at 250 K in ultrathin Au-Nb film on single-crystal silicon

International Nuclear Information System (INIS)

Yamamoto, H.; Kawashima, T.; Tanaka, M.

1986-01-01

Ultrathin Au-Nb films as thin as 0.2 about 10 nm were deposited on clean surfaces of single-crystal silicon in order to investigate interfacial excitonic superconductivity. The samples were classified into two types, Nb-Au/Si and Au-Nb-Au/Si. In the latter case, the secondary Au film was deposited on the former sample cooled by liquid nitrogen. In the Nb-Au/ Si type of sample, a sheet resistance, R /SUB s/ at room temperature abruptly increased from 10 3 Ωsq -1 order to about 10 5 Ωsq -1 in several days a few months after the sample preparation. Then the sample showed an anomalous decrease of R /SUB s/ at about 250 K and an approximately null resistance at lower temperatures. This phenomenon was not so stable and was observed only for a few days. The Au-Nb-Au/Si type of sample showed low R /SUB s/ (10 2 about 10 3 Ωsq -1 ) at room temperature. A decrease and disappearance of R /SUB s/ were also observed at about 240 K in the sample with comparatively good reproducibility. These phenomena are discussed qualitatively, based on the excitonic superconductive model for an interface of metal/semiconductor by Allender, Bray, and Bardeen

Controlled decomposition and oxidation: A treatment method for gaseous process effluents

Science.gov (United States)

Mckinley, Roger J. B., Sr.

1990-01-01

The safe disposal of effluent gases produced by the electronics industry deserves special attention. Due to the hazardous nature of many of the materials used, it is essential to control and treat the reactants and reactant by-products as they are exhausted from the process tool and prior to their release into the manufacturing facility's exhaust system and the atmosphere. Controlled decomposition and oxidation (CDO) is one method of treating effluent gases from thin film deposition processes. CDO equipment applications, field experience, and results of the use of CDO equipment and technological advances gained from the field experiences are discussed.

Low energy electron stimulated desorption from DNA films dosed with oxygen

Energy Technology Data Exchange (ETDEWEB)

Mirsaleh-Kohan, Nasrin; Bass, Andrew D.; Cloutier, Pierre; Massey, Sylvain; Sanche, Leon [Groupe en sciences des radiations, Faculte de medecine et des sciences de la sante, Universite de Sherbrooke, Sherbrooke, Quebec J1H 5N4 (Canada)

2012-06-21

Desorption of anions stimulated by 1-18 eV electron impact on self-assembled monolayer (SAM) films of single DNA strands is measured as a function of film temperature (50-250 K). The SAMs, composed of 10 nucleotides, are dosed with O{sub 2}. The OH{sup -} desorption yields increase markedly with exposure to O{sub 2} at 50 K and are further enhanced upon heating. In contrast, the desorption yields of O{sup -}, attributable to dissociative electron attachment to trapped O{sub 2} molecules decrease with heating. Irradiation of the DNA films prior to the deposition of O{sub 2} shows that this surprising increase in OH{sup -} desorption, at elevated temperatures, arises from the reaction of O{sub 2} with damaged DNA sites. These results thus appear to be a manifestation of the so-called 'oxygen fixation' effect, well known in radiobiology.

Metal-insulator transition in tin doped indium oxide (ITO) thin films: Quantum correction to the electrical conductivity

OpenAIRE

Deepak Kumar Kaushik; K. Uday Kumar; A. Subrahmanyam

2017-01-01

Tin doped indium oxide (ITO) thin films are being used extensively as transparent conductors in several applications. In the present communication, we report the electrical transport in DC magnetron sputtered ITO thin films (prepared at 300 K and subsequently annealed at 673 K in vacuum for 60 minutes) in low temperatures (25-300 K). The low temperature Hall effect and resistivity measurements reveal that the ITO thin films are moderately dis-ordered (kFl∼1; kF is the Fermi wave vector and l ...

100 kV, 80 kJ low-induction capacitor module

International Nuclear Information System (INIS)

Andrezen, A.B.; Burtsev, V.A.; Vodovozov, V.M.; Drozdov, A.A.; Makeev, G.M.

1980-01-01

A low induction capacitor module has been developed to investigate THETA- and Z-pinch plasma. Energy output time of the module lays in the microsecond range. The 100 kV, 80 kJ module is based on low-induction castor capasitors. The module is equipped with two solid dielectric dischargers, the system of discharger ignition protection system and automatic system for charging of capacitors. The module discharge period T 0 =5.6 μs. The capacitor module has been used in investigations of electric explosions of Al plane foils in the pulverized quartz. The overvoltage Usub(max)/Usub(o) approximately equal to 10 has been received at the maximum intensity of the electric field Esub(max) approximately equal to 12 kV/sm [ru

Properties of zinc oxide at low and moderate temperatures

International Nuclear Information System (INIS)

Lashkarev, G.V.; Karpina, V.A.; Lazorenko, V.I.; Evtushenko, A.I.; Shteplyuk, I.I.; Khranovskij, V.D.

2011-01-01

The properties of zinc oxide as an analogue of gallium nitride are considered in a wide temperature range and the field of its potential applications. The economic and ecologic benefits as well as radiation resistivity of ZnO in comparison with Group III nitrides are indicated. Methods of growth of films and nanostructures of high crystal perfection are proposed. In particular, a magnetron method for layer growth of films is implemented which permits to realize their high structural perfection and considerable thickness inappropriate to some other methods. It is shown that monochromatic UV light may be obtained on excitation of films by short-wave radiation and electrons. This makes it possible to use them in the sources of short-wave radiation. The effectiveness of field emission for ZnO nanostructures and films is demonstrated which opens the prospect for their use in vacuum microelectronics devices. In particular, a phototransistor based on ZnO films doped with nitrogen was fabricated the photosensitivity of which was two orders of magnitude higher than that of conventional detectors. The physical basis of creating blue, green LEDs based on zinc oxide film and its solid solutions with CdO are outlined. The importance of active research in physics, and production procedures of zinc oxide-based devices is underlined.

Solvothermal synthesis of nanorods of ZnO, N-doped ZnO and CdO

International Nuclear Information System (INIS)

Varghese, Neenu; Panchakarla, L.S.; Hanapi, M.; Govindaraj, A.; Rao, C.N.R.

2007-01-01

ZnO nanorods with diameters in the 80-800 nm range are readily synthesized by the reaction of zinc acetate, ethanol and ethylenediamine under solvothermal conditions. The best products are obtained at 330 deg. C with a slow heating rate. Addition of the surfactant Triton -X 100 gave nanorods of uniform (300 nm) diameter. By adding a small amount of liquid NH 3 to the reaction mixture, N-doped ZnO nanorods, with distinct spectroscopic features are obtained. CdO nanorods of 80 nm diameter have been prepared under solvothermal conditions using a mixture of cadmium cupferronate, ethylenediamine and ethanol at 330 deg. C. Similarly, Zn 1-x Cd x O nanorods of a 70 nm diameter are obtained under solvothermal conditions starting with a mixture of zinc acetate, cadmium cupferronate, ethanol and ethylenediamine

Laser Cutting of Thick Diamond Films Using Low-Power Laser

Energy Technology Data Exchange (ETDEWEB)

Park, Y.J.; Baik, Y.J. [Korea Institute of Science and Technology, Seoul (Korea)

2000-02-01

Laser cutting of thick diamond films is studied rising a low-power(10 W) copper vapor laser. Due to the existence of the saturation depth in laser cutting, thick diamond films are not easily cut by low-power lasers. In this study, we have adopted a low thermal- conductivity underlayer of alumina and a heating stage (up to 500 deg. C in air) to prevent the laser energy from consuming-out and, in turn, enhance the cutting efficiency. Aspect ratio increases twice from 3.5 to 7 when the alumina underlayer used. Adopting a heating stage also increases aspect ratio and more than 10 is obtained at higher temperatures than 400 deg. C. These results show that thick diamond films can be cut, with low-power lasers, simply by modifying the thermal property of underlayer. (author). 13 refs., 5 figs.

Magnetorefractive effect in the La{sub 1−x}K{sub x}MnO{sub 3} thin films grown by MOCVD

Energy Technology Data Exchange (ETDEWEB)

Sukhorukov, Yu.P., E-mail: suhorukov@imp.uran.ru [Institute of Metal Physics, Ural Division of RAS, 620990 Ekaterinburg (Russian Federation); Telegin, A.V. [Institute of Metal Physics, Ural Division of RAS, 620990 Ekaterinburg (Russian Federation); Bessonov, V.D. [Institute of Metal Physics, Ural Division of RAS, 620990 Ekaterinburg (Russian Federation); University of Bialystok, 15-424 Bialystok (Poland); Gan’shina, E.A.; Kaul’, A.R.; Korsakov, I.E.; Perov, N.S.; Fetisov, L.Yu. [Faculty of Physics, Moscow State University, Moscow 119991 (Russian Federation); Yurasov, A.N. [Moscow State Technical University of Radioengineering, Electronics and Automation, 119454 Moscow (Russian Federation)

2014-10-01

Thin epitaxial La{sub 1−x}K{sub x}MnO{sub 3} films were grown using two-stage procedure. Influence of substitution of La{sup 3+} ions with K{sup +} ions on the optical and electrical properties of La{sub 1−x}K{sub x}MnO{sub 3} films (x=0.05, 0.10, 0.15 i 0.18) has been studied in detail. A noticeable magnetorefractive effect in the films under study was detected in the infrared range. Magnetorefractive effect as well as transverse magneto-optical Kerr effect and magnetoresistance have the maximum in optimally doped sample with x=0.18 corresponding to the highest Curie temperature. The experimental data for compositions close to optimally doped films are in good agreement with the data calculated in the framework of a theory developed for manganites. The resonance-like contribution to magnetoreflection spectra of manganite films has been observed in the vicinity of the phonon bands. It is shown that magnetic and charge inhomogeneities strongly influence on the magneto-optical effects in films. Thin films of La{sub 1−x}K{sub x}MnO{sub 3} with the large values of Kerr and magnetorefractive effect are promising magneto-optical material in the infrared range. - Highlights: • Giant magnetorefractive effect was obtained in La{sub 1−x}K{sub x}MnO{sub 3} films in the infrared. • Inhomogeneity as well as doping level strongly influences the value of magnetorefractive effect. • Resonance-like bands have been observed in the magnetoreflection spectra of the films. • The obtained experimental data can be explained in the framework of the MRE theory.

Low-temperature deposition of ZnO thin films on PET and glass substrates by DC-sputtering technique

International Nuclear Information System (INIS)

Banerjee, A.N.; Ghosh, C.K.; Chattopadhyay, K.K.; Minoura, Hideki; Sarkar, Ajay K.; Akiba, Atsuya; Kamiya, Atsushi; Endo, Tamio

2006-01-01

The structural, optical and electrical properties of ZnO thin films (260 - 490 nm thick) deposited by direct-current sputtering technique, at a relatively low-substrate temperature (363 K), onto polyethylene terephthalate and glass substrates have been investigated. X-ray diffraction patterns confirm the proper phase formation of the material. Optical transmittance data show high transparency (80% to more than 98%) of the films in the visible portion of solar radiation. Slight variation in the transparency of the films is observed with a variation in the deposition time. Electrical characterizations show the room-temperature conductivity of the films deposited onto polyethylene terephthalate substrates for 4 and 5 h around 0.05 and 0.25 S cm -1 , respectively. On the other hand, for the films deposited on glass substrates, these values are 8.5 and 9.6 S cm -1 for similar variation in the deposition time. Room-temperature conductivity of the ZnO films deposited on glass substrates is at least two orders of magnitude higher than that of ZnO films deposited onto polyethylene terephthalate substrates under identical conditions. Hall-measurements show the maximum carrier concentration of the films on PET and glass substrate around 2.8 x 10 16 and 3.1 x 10 2 cm -3 , respectively. This report will provide newer applications of ZnO thin films in flexible display technology

Apparatus to measure emissivities of metallic films between 90K and room temperature

International Nuclear Information System (INIS)

Bekeris, V.I.; Ramos, E.D.; Sanchez, D.H.

1975-01-01

The development of multilayer insulations is aerospace and cryogenic required to know the emissivity of the metallic films used as reflective layers. This work describes an emissometer that measures the total hemispherical emissivity of metallic films evaporated on polyester substrates. The apparatus works at liquid oxigen temperatures and permits to get emissivities from 90K to room temperatures within a 15% precision. The emissometer construction and operation are described in detail. Results of measurements done on Single Aluminized Mylar are presented [pt

Apparatus to measure emissivities of metallic films between 90K and room temperature

Energy Technology Data Exchange (ETDEWEB)

Bekeris, V I [Nunez Univ. Nacional (Argentina). Faculdad de Ciencias Exactas Y Naturales; Ramos, E D [Santa Rosa Univ. Nacional (Argentina). Facultad de Ciencias Exactas Y Naturales; Sanchez, D H [Comision Nacional de Energia Atomica, San Carlos de Bariloche (Argentina). Centro Atomico Bariloche

1975-09-01

The development of multilayer insulations is aerospace and cryogenic required to know the emissivity of the metallic films used as reflective layers. This work describes an emissometer that measures the total hemispherical emissivity of metallic films evaporated on polyester substrates. The apparatus works at liquid oxigen temperatures and permits to get emissivities from 90K to room temperatures within a 15% precision. The emissometer construction and operation are described in detail. Results of measurements done on Single Aluminized Mylar are presented.

Electrochemical deposition of carbon films on titanium in molten LiCl–KCl–K2CO3

International Nuclear Information System (INIS)

Song, Qiushi; Xu, Qian; Wang, Yang; Shang, Xujing; Li, Zaiyuan

2012-01-01

Electrodeposition of carbon films on the oxide-scale-coated titanium has been performed in a LiCl–KCl–K 2 CO 3 melt, which are characterized by scanning electron microscopy, Raman spectroscopy and X-ray diffraction analysis. The electrochemical process of carbon deposition is investigated by cyclic voltammetry on the graphite, titanium and oxide-scale-coated titanium electrodes. The particle-size-gradient carbon films over the oxide-scale-coated titanium can be achieved by electrodeposition under the controlled potentials for avoiding codeposition of lithium carbide. The deposited carbon films are comprised of micron-sized ‘quasi-spherical’ carbon particles with graphitized and amorphous phases. The cyclic voltammetry behavior on the graphite, titanium and oxide-scale-coated titanium electrodes shows that CO 3 2− ions are reduced most favorably on the graphite for the three electrodes. Lithium ions can discharge under the less negative potential on the electrode containing carbon compared with titanium electrode because of the formation of lithium carbide from the reaction between lithium and carbon. - Highlights: ► Carbon films are prepared on oxide-scale-coated titanium in a LiCl–KCl–K 2 CO 3 melt. ► The films comprise micron-size ‘quasi-spherical’ carbon particles. ► The films present particle-size-gradient. ► The particles contain graphitized and amorphous phases. ► The prepared carbon films are more electrochemically active than graphite.

Anti-listerial activity of a polymeric film coated with hybrid coatings doped with Enterocin 416K1 for use as bioactive food packaging.

Science.gov (United States)

Iseppi, Ramona; Pilati, Francesco; Marini, Michele; Toselli, Maurizio; de Niederhäusern, Simona; Guerrieri, Elisa; Messi, Patrizia; Sabia, Carla; Manicardi, Giuliano; Anacarso, Immacolata; Bondi, Moreno

2008-04-30

In this study, Enterocin 416K1, a bacteriocin produced by Enterococcus casseliflavus IM 416K1, was entrapped in an organic-inorganic hybrid coating applied to a LDPE (low-density polyethylene) film for its potential use in the active food packaging field. The antibacterial activity of the coated film was evaluated against Listeria monocytogenes NCTC 10888 by qualitative modified agar diffusion assay, quantitative determination in listeria saline solution suspension and direct contact with artificially contaminated food samples (frankfurters and fresh cheeses) stored at room and refrigeration temperatures. All investigations demonstrated that enterocin-activated coatings have a good anti-listeria activity. Qualitative tests showed a clear zone of inhibition in the indicator lawn in contact with and around the coated film. During the quantitative antibacterial evaluation the L. monocytogenes viable counts decreased to 1.5 log units compared to the control. The inhibitory capability was confirmed also in food-contact assays. In all food samples packed with coated films we observed a significant decrease in L. monocytogenes viable counts in the first 24 h compared to the control. This difference was generally maintained up to the seventh day and then decreased, with the exception of the cheese samples stored at refrigeration temperature.

Low operating voltage InGaZnO thin-film transistors based on Al{sub 2}O{sub 3} high-k dielectrics fabricated using pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Geng, G. Z.; Liu, G. X.; Zhang, Q.; Shan, F. K. [Qingdao University, Qingdao (China); DongEui University, Busan (Korea, Republic of); Lee, W. J.; Shin, B. C. [DongEui University, Busan (Korea, Republic of); Cho, C. R. [Pusan National University, Busan (Korea, Republic of)

2014-05-15

Low-voltage-driven amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) with an Al{sub 2}O{sub 3} dielectric were fabricated on a Si substrate by using pulsed laser deposition. Both Al{sub 2}O{sub 3} and IGZO thin films are amorphous, and the thin films have very smooth surfaces. The Al{sub 2}O{sub 3} gate dielectric exhibits a very low leakage current density of 1.3 x 10{sup -8} A/cm{sup 2} at 5 V and a high capacitance density of 60.9 nF/cm{sup 2}. The IGZO TFT with a structure of Ni/IGZO/Al{sub 2}O{sub 3}/Si exhibits high performance with a low threshold voltage of 1.18 V, a high field effect mobility of 20.25 cm{sup 2}V{sup -1}s{sup -1}, an ultra small subthreshold swing of 87 mV/decade, and a high on/off current ratio of 3 x 10{sup 7}.

Flux pinning landscape up to 25 T in SmBa2Cu3O y films with BaHfO3 nanorods fabricated by low-temperature growth technique

Science.gov (United States)

Tsuchiya, Yuji; Miura, Shun; Awaji, Satoshi; Ichino, Yusuke; Matsumoto, Kaname; Izumi, Teruo; Watanabe, Kazuo; Yoshida, Yutaka

2017-10-01

REBa2Cu3O y superconducting tapes are appropriate for high field magnet applications at low temperatures (i.e. below liquid nitrogen temperature). To clarify the morphology and the volume of the effective pinning center at low temperatures, we used a low-temperature growth technique to fabricate SmBa2Cu3O y (SmBCO) films with various amounts of BaHfO3 (BHO) nanorods onto MgO-buffered metal substrates produced by ion-beam-assisted deposition; we investigated their flux pinning properties using a 25 T cryogen-free superconducting magnet that was recently developed at Tohoku University. According to the microstructural analysis using transmission electron microscopy, the BHO nanorods have a content-dependent morphology and are aligned for the higher content. The inclined and discontinuous BHO nanorods were observed in SmBCO films with BHO contents up to 3.8 vol%; they show an excellent flux pinning force density (1.5 TN m-3 at 21 T and 4.2 K) even when the magnetic field is perpendicular to the films. Based on the effective mass model for the flux pinning, the random pinning centers are dominant at low temperatures. The correlated flux pinning is stronger for aligned nanorods; however, the random pinning center becomes weaker in the 4.5 vol% BHO-doped films. Therefore, the optimal BHO doping level is approximately 3.8 vol% in terms of the amplitude of the critical current density and the anisotropy from 4.2 K to 20 K because this provides the best mixture of correlated and random flux pinning centers.

Effect of arc suppression on the physical properties of low temperature dc magnetron sputtered tantalum thin films

International Nuclear Information System (INIS)

Subrahmanyam, A.; Valleti, Krishna; Joshi, Srikant V.; Sundararajan, G.

2007-01-01

Arcing is a common phenomenon in the sputtering process. Arcs and glow discharges emit electrons which may influence the physical properties of films. This article reports the properties of tantalum (Ta) thin films prepared by continuous dc magnetron sputtering in normal and arc-suppression modes. The substrate temperature was varied in the range of 300-673 K. The tantalum films were ∼1.8 μm thick and have good adherence to 316 stainless steel and single-crystal silicon substrates. The phase of the Ta thin film determines the electrical and tribological properties. The films deposited at 300 K using both methods were crystallized in a tetragonal structure (β phase) with a smooth surface (grain size of ∼10 nm) and exhibited an electrical resistivity of ∼194 μΩ cm and a hardness of ∼20 GPa. When the substrate temperature was 473 K and higher, the arc-suppression mode appears to influence the films to crystallize in the α phase with a grain size of ∼40 nm, whereas the normal power mode gave mixed phases β and α beyond 473 K, the arc-suppression mode yields larger grain sizes in the Ta thin films and the hardness decreases. These changes in the physical properties in arc-suppression mode are attributed to either the change in plasma characteristics or the energetic particle bombardment onto the substrate, or both

A Low-Stress, Elastic, and Improved Hardness Hydrogenated Amorphous Carbon Film

Directory of Open Access Journals (Sweden)

Qi Wang

2015-01-01

Full Text Available The evolution of hydrogenated amorphous carbon films with fullerene-like microstructure was investigated with a different proportion of hydrogen supply in deposition. The results showed at hydrogen flow rate of 50 sccm, the deposited films showed a lower compressive stress (lower 48.6%, higher elastic recovery (higher 19.6%, near elastic recovery rate 90%, and higher hardness (higher 7.4% compared with the films deposited without hydrogen introduction. Structural analysis showed that the films with relatively high sp2 content and low bonded hydrogen content possessed high hardness, elastic recovery rate, and low compressive stress. It was attributed to the curved graphite microstructure, which can form three-dimensional covalently bonded network.

Low-temperature atomic layer deposition of MoS{sub 2} films

Energy Technology Data Exchange (ETDEWEB)

Jurca, Titel; Wang, Binghao; Tan, Jeffrey M.; Lohr, Tracy L.; Marks, Tobin J. [Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, IL (United States); Moody, Michael J.; Henning, Alex; Emery, Jonathan D.; Lauhon, Lincoln J. [Department of Materials Science and Engineering, and the Materials Research Center, Northwestern University, Evanston, IL (United States)

2017-04-24

Wet chemical screening reveals the very high reactivity of Mo(NMe{sub 2}){sub 4} with H{sub 2}S for the low-temperature synthesis of MoS{sub 2}. This observation motivated an investigation of Mo(NMe{sub 2}){sub 4} as a volatile precursor for the atomic layer deposition (ALD) of MoS{sub 2} thin films. Herein we report that Mo(NMe{sub 2}){sub 4} enables MoS{sub 2} film growth at record low temperatures - as low as 60 C. The as-deposited films are amorphous but can be readily crystallized by annealing. Importantly, the low ALD growth temperature is compatible with photolithographic and lift-off patterning for the straightforward fabrication of diverse device structures. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

Knockout of the murine cysteine dioxygenase gene results in severe impairment in ability to synthesize taurine and an increased catabolism of cysteine to hydrogen sulfide

Science.gov (United States)

Ueki, Iori; Roman, Heather B.; Valli, Alessandro; Fieselmann, Krista; Lam, Jimmy; Peters, Rachel; Hirschberger, Lawrence L.

2011-01-01

Cysteine homeostasis is dependent on the regulation of cysteine dioxygenase (CDO) in response to changes in sulfur amino acid intake. CDO oxidizes cysteine to cysteinesulfinate, which is further metabolized to either taurine or to pyruvate plus sulfate. To gain insight into the physiological function of CDO and the consequence of a loss of CDO activity, mice carrying a null CDO allele (CDO+/− mice) were crossed to generate CDO−/−, CDO+/−, and CDO+/+ mice. CDO−/− mice exhibited postnatal mortality, growth deficit, and connective tissue pathology. CDO−/− mice had extremely low taurine levels and somewhat elevated cysteine levels, consistent with the lack of flux through CDO-dependent catabolic pathways. However, plasma sulfate levels were slightly higher in CDO−/− mice than in CDO+/− or CDO+/+ mice, and tissue levels of acid-labile sulfide were elevated, indicating an increase in cysteine catabolism by cysteine desulfhydration pathways. Null mice had lower hepatic cytochrome c oxidase levels, suggesting impaired electron transport capacity. Supplementation of mice with taurine improved survival of male pups but otherwise had little effect on the phenotype of the CDO−/− mice. H2S has been identified as an important gaseous signaling molecule as well as a toxicant, and pathology may be due to dysregulation of H2S production. Control of cysteine levels by regulation of CDO may be necessary to maintain low H2S/sulfane sulfur levels and facilitate the use of H2S as a signaling molecule. PMID:21693692

Enhanced energy storage and pyroelectric properties of highly (100)-oriented (Pb1-x-yLaxCay)Ti1-x/4O3 thin films derived at low temperature

Science.gov (United States)

Zhu, Hanfei; Ma, Hongfang; Zhao, Yuyao

2018-05-01

Highly (100)-oriented (Pb1-x-yLaxCay)Ti1-x/4O3 (x = 0.15, y = 0.05; x = 0.1, y = 0.1; x = 0.05, y = 0.15) thin films were deposited on Pt/Ti/SiO2/Si substrates at a low temperature of 450 °C via a sol-gel route. It was found that all the (Pb1-x-yLaxCay)Ti1-x/4O3 thin films could be completely crystallized and the content of La/Ca showed a significant effect on the electrical properties of films. Among the three films, the (Pb1-x-yLaxCay)Ti1-x/4O3 (x = 0.1, y = 0.1) thin film exhibited the enhanced overall electrical properties, such as a low dielectric loss (tan ⁡ δ energy density (Wre ∼ 15 J/cm3), as well as a large pyroelectric coefficient (p ∼ 190 μC/m2K) and figure of merit (Fd‧∼ 77 μC /m2K). The findings suggest that the fabricated thin films with a good (100) orientation can be an attractive candidate for applications in Si-based energy storage and pyroelectric devices.

Low-temperature technique for thick film resist stabilization and curing

Science.gov (United States)

Minter, Jason P.; Wong, Selmer S.; Marlowe, Trey; Ross, Matthew F.; Narcy, Mark E.; Livesay, William R.

1999-06-01

For a range of thick film photoresist applications, including MeV ion implant processing, thin film head manufacturing, and microelectromechanical systems processing, there is a need for a low-temperature method for resist stabilization and curing. Traditional methods of stabilizing or curing resist films have relied on thermal cycling, which may not be desirable due to device temperature limitations or thermally-induced distortion of the resist features.

Sol-gel-derived mesoporous silica films with low dielectric constants

Energy Technology Data Exchange (ETDEWEB)

Seraji, S.; Wu, Yun; Forbess, M.; Limmer, S.J.; Chou, T.; Cao, Guozhong [Washington Univ., Seattle, WA (United States). Dept. of Materials Science and Engineering

2000-11-16

Mesoporous silica films with low dielectric constants and possibly closed pores have been achieved with a multiple step sol-gel processing technique. Crack-free films with approximately 50% porosity and 0.9 {mu}m thicknesses were obtained, a tape-test revealing good adhesion between films and substrates or metal electrodes. Dielectric constants remained virtually unchanged after aging at room temperature at 56% humidity over 6 days. (orig.)

Low-temperature synthesis of homogeneous nanocrystalline cubic silicon carbide films

International Nuclear Information System (INIS)

Cheng Qijin; Xu, S.

2007-01-01

Silicon carbide films are fabricated by inductively coupled plasma chemical vapor deposition from feedstock gases silane and methane heavily diluted with hydrogen at a low substrate temperature of 300 deg. C. Fourier transform infrared absorption spectroscopy, Raman spectroscopy, x-ray photoelectron spectroscopy, and high-resolution transmission electron microscopy analyses show that homogeneous nanocrystalline cubic silicon carbide (3C-SiC) films can be synthesized at an appropriate silane fraction X[100%xsilane flow(SCCM)/silane+methane flow(SCCM)] in the gas mixture. The achievement of homogeneous nanocrystalline 3C-SiC films at a low substrate temperature of 300 deg. C is a synergy of a low deposition pressure (22 mTorr), high inductive rf power (2000 W), heavy dilution of feedstock gases silane and methane with hydrogen, and appropriate silane fractions X (X≤33%) in the gas mixture employed in our experiments

Response of radiochromic dye films to low energy heavy charged particles

CERN Document Server

Buenfil, A E; Gamboa-Debuen, I; Aviles, P; Avila, O; Olvera, C; Robledo, R; Rodriguez-Ponce, M; Mercado-Uribe, H; Rodriguez-Villafuerte, M; Brandan, M E

2002-01-01

We have studied the possible use of radiochromic dye films (RCF) as heavy charged particle dosemeters. We present the results of irradiating two commercial RCF (GafChromic HD-810 and MD-55-1) with 1.5, 2.9 and 4.4 MeV protons, 1.4, 2.8, 4.7, 5.9, 6.8 MeV sup 4 He ions and 8.5 and 12.4 MeV sup 1 sup 2 C ions, at proton doses from about 1 Gy up to 3 kGy, helium ions doses from 3 Gy to 5 kGy and carbon ion doses from 30 Gy to 20 kGy. The films were scanned and digitized using commercial equipment. For a given particle, the response per unit dose at different energies indicates an energy dependence of the sensitivity, which is discussed. Comparison was made for the use of a standard spectrophotometer to obtain optical density readings versus a white light scanner.

Characterization of ultraviolet light cured polydimethylsiloxane films for low-voltage, dielectric elastomer actuators

Science.gov (United States)

Töpper, Tino; Wohlfender, Fabian; Weiss, Florian; Osmani, Bekim; Müller, Bert

2016-04-01

The reduction the operation voltage has been the key challenge to realize of dielectric elastomer actuators (DEA) for many years - especially for the application fields of robotics, lens systems, haptics and future medical implants. Contrary to the approach of manipulating the dielectric properties of the electrically activated polymer (EAP), we intend to realize low-voltage operation by reducing the polymer thickness to the range of a few hundred nanometers. A study recently published presents molecular beam deposition to reliably grow nanometer-thick polydimethylsiloxane (PDMS) films. The curing of PDMS is realized using ultraviolet (UV) radiation with wavelengths from 180 to 400 nm radicalizing the functional side and end groups. The understanding of the mechanical properties of sub-micrometer-thin PDMS films is crucial to optimize DEAs actuation efficiency. The elastic modulus of UV-cured spin-coated films is measured by nano-indentation using an atomic force microscope (AFM) according to the Hertzian contact mechanics model. These investigations show a reduced elastic modulus with increased indentation depth. A model with a skin-like SiO2 surface with corresponding elastic modulus of (2.29 +/- 0.31) MPa and a bulk modulus of cross-linked PDMS with corresponding elastic modulus of (87 +/- 7) kPa is proposed. The surface morphology is observed with AFM and 3D laser microscopy. Wrinkled surface microstructures on UV-cured PDMS films occur for film thicknesses above (510 +/- 30) nm with an UV-irradiation density of 7.2 10-4 J cm-2 nm-1 at a wavelength of 190 nm.

Catalytic Palladium Film Deposited by Scalable Low-Temperature Aqueous Combustion.

Science.gov (United States)

Voskanyan, Albert A; Li, Chi-Ying Vanessa; Chan, Kwong-Yu

2017-09-27

This article describes a novel method for depositing a dense, high quality palladium thin film via a one-step aqueous combustion process which can be easily scaled up. Film deposition of Pd from aqueous solutions by conventional chemical or electrochemical methods is inhibited by hydrogen embrittlement, thus resulting in a brittle palladium film. The method outlined in this work allows a direct aqueous solution deposition of a mirror-bright, durable Pd film on substrates including glass and glassy carbon. This simple procedure has many advantages including a very high deposition rate (>10 cm 2 min -1 ) and a relatively low deposition temperature (250 °C), which makes it suitable for large-scale industrial applications. Although preparation of various high-quality oxide films has been successfully accomplished via solution combustion synthesis (SCS) before, this article presents the first report on direct SCS production of a metallic film. The mechanism of Pd film formation is discussed with the identification of a complex formed between palladium nitrate and glycine at low temperature. The catalytic properties and stability of films are successfully tested in alcohol electrooxidation and electrochemical oxygen reduction reaction. It was observed that combustion deposited Pd film on a glassy carbon electrode showed excellent catalytic activity in ethanol oxidation without using any binder or additive. We also report for the first time the concept of a reusable "catalytic flask" as illustrated by the Suzuki-Miyaura cross-coupling reaction. The Pd film uniformly covers the inner walls of the flask and eliminates the catalyst separation step. We believe the innovative concept of a reusable catalytic flask is very promising and has the required features to become a commercial product in the future.

Dependence on film thickness of grain boundary low-field magnetoresistance in thin films of La0.7Ca0.3MnO3

International Nuclear Information System (INIS)

Todd, N. K.; Mathur, N. D.; Blamire, M. G.

2001-01-01

The magnetoresistance of grain boundaries in the perovskite manganites is being studied, both in polycrystalline materials, and thin films grown on bicrystal substrates, because of interest in low-field applications. In this article we show that epitaxial films grown on SrTiO 3 bicrystal substrates of 45 degree misorientation show magnetoresistance behavior which is strongly dependent on the thickness of the film. Thin films, e.g., 40 nm, can show a large low-field magnetoresistance at low temperatures, with very sharp switching between distinct high and low resistance states for fields applied in plane and parallel to the boundary. Thicker films show a more complex behavior of resistance as a function of field, and the dependence on the angle between the applied field and the grain boundary is altered. These changes in magnetoresistance behavior are linked to the variation in morphology of the films. Thin films are coherently strained, due to the mismatch with the substrate, and very smooth. Thicker films relax, with the formation of defects, and hence different micromagnetic behavior. [copyright] 2001 American Institute of Physics

Effect of Radio-Frequency and Low-Frequency Bias Voltage on the Formation of Amorphous Carbon Films Deposited by Plasma Enhanced Chemical Vapor Deposition

International Nuclear Information System (INIS)

Manis-Levy, Hadar; Mintz, Moshe H.; Livneh, Tsachi; Zukerman Ido; Raveh, Avi

2014-01-01

The effect of radio-frequency (RF) or low-frequency (LF) bias voltage on the formation of amorphous hydrogenated carbon (a-C:H) films was studied on silicon substrates with a low methane (CH 4 ) concentration (2–10 vol.%) in CH 4 +Ar mixtures. The bias substrate was applied either by RF (13.56 MHz) or by LF (150 kHz) power supply. The highest hardness values (∼18–22 GPa) with lower hydrogen content in the films (∼20 at.%) deposited at 10 vol.% CH 4 , was achieved by using the RF bias. However, the films deposited using the LF bias, under similar RF plasma generation power and CH 4 concentration (50 W and 10 vol.%, respectively), displayed lower hardness (∼6–12 GPa) with high hydrogen content (∼40 at.%). The structures analyzed by Fourier Transform Infrared (FTIR) and Raman scattering measurements provide an indication of trans-polyacetylene structure formation. However, its excessive formation in the films deposited by the LF bias method is consistent with its higher bonded hydrogen concentration and low level of hardness, as compared to the film prepared by the RF bias method. It was found that the effect of RF bias on the film structure and properties is stronger than the effect of the low-frequency (LF) bias under identical radio-frequency (RF) powered electrode and identical PECVD (plasma enhanced chemical vapor deposition) system configuration. (plasma technology)

Low-energy electron irradiation induced top-surface nanocrystallization of amorphous carbon film

Science.gov (United States)

Chen, Cheng; Fan, Xue; Diao, Dongfeng

2016-10-01

We report a low-energy electron irradiation method to nanocrystallize the top-surface of amorphous carbon film in electron cyclotron resonance plasma system. The nanostructure evolution of the carbon film as a function of electron irradiation density and time was examined by transmission electron microscope (TEM) and Raman spectroscopy. The results showed that the electron irradiation gave rise to the formation of sp2 nanocrystallites in the film top-surface within 4 nm thickness. The formation of sp2 nanocrystallite was ascribed to the inelastic electron scattering in the top-surface of carbon film. The frictional property of low-energy electron irradiated film was measured by a pin-on-disk tribometer. The sp2 nanocrystallized top-surface induced a lower friction coefficient than that of the original pure amorphous film. This method enables a convenient nanocrystallization of amorphous surface.

Aspects of 'low field' magnetotransport in epitaxial thin films of the ferromagnetic metallic oxide SrRuO3

International Nuclear Information System (INIS)

Moran, O.; Saldarriaga, W.; Baca, E.

2007-01-01

Epitaxial thin films of the conductive ferromagnetic oxide SrRuO 3 were grown on an (001) SrTiO 3 (STO) substrate by using DC sputtering technique. The magnetic and magnetoresistive properties of the films were measured by applying the magnetic field both perpendicular (out-of-plane) and parallel (in-plane) to the film plane and ever maintaining the direction of the applied field perpendicular to that of the transport current. The films grown on an (001) STO substrate showed identical magnetization properties in two orthogonal crystallographic directions of the substrate, [100] S and [001] S (in-plane and out-of-plane geometry), which suggests the presence of a multi domain structure within the plane of the film. For such samples, no anisotropic field (hard axis) along de [001]s direction, i.e., perpendicular to the film-plane could be detected. Nevertheless, a distinguishable temperature dependent out-of-plane anisotropic magnetoresistance (MR) along with strong temperature dependent low field hysteretic MR(H) behavior was detected for the studied films. A negative MR ratio MR(T)=[ρ(μ 0 H=9T; T)-ρ( μ 0 H=0T; T)]/ρ( μ 0 H=0T; T) on the order of a few percent, with maximums of ∼6% and ∼4% (right at the Curie temperature, T C ∼160K) was calculated for an in-plane and out-of plane measuring geometry, respectively. In addition there is an equally strong MR effect at low temperatures, which might be related to the temperature dependence of the magnetocrystalline anisotropy together with a magnetization rotation. Both the MR(T) behavior and the achieved values (except for T 3 films grown on 2 o miscut (001) STO substrates with the current parallel to the field and parallel to the [1-bar11] direction, which was identified as the easier axis for magnetization

Downflow film boiling in a rod bundle at low pressure

International Nuclear Information System (INIS)

Hochreiter, L.E.; Rosal, E.R.; Fayfich, R.R.

1978-01-01

A series of low pressure downflow film boiling heat transfer experiments were conducted in a 14-foot (4.27 m) long electrically heater rod bundle containing 336 heater rods. The resulting data was compared with the Dougall-Rohsenow dispersed flow film boiling correlation. The data was found to lie below this correlation as the quality was increased. It is believed that buoyancy effects decreased the heat transfer in downflow film boiling. (author)

Thin film solar modules: the low cost, high throughput and versatile alternative to Si wafers

Energy Technology Data Exchange (ETDEWEB)

Hegedus, S. [Delaware Univ., Inst. of Energy Conversion, Newark, DE (United States)

2006-07-01

Thin film solar cells (TFSC) have passed adolescence and are ready to make a substantial contribution to the world's electricity generation. They can have advantages over c-Si solar modules in ease of large area, lower cost manufacturing and in several types of applications. Factors which limit TFSC module performance relative to champion cell performance are discussed along with the importance of increased throughput and yield. The consensus of several studies is that all TFSC can achieve costs below 1 $/W if manufactured at sufficiently large scale >100 MW using parallel lines of cloned equipment with high material utilization and spray-on encapsulants. There is significant new commercial interest in TFSC from small investors and large corporations, validating the thin film approach. Unique characteristics are discussed which give TFSC an advantage over c-Si in two specific markets: small rural solar home systems and building integrated photovoltaic installations. TFSC have outperformed c-Si in annual energy production (kWhrs/kW), have demonstrated outdoor durability comparable to c-Si and are being used in MW scale installations worldwide. The merits of the thin film approach cannot be judged on the basis of efficiency alone but must also account for module performance and potential for low cost. TFSC advocates should promote their unique virtues compared to c-Si: lower cost, higher kWhr/kW output, higher battery charging current, attractive visual appearance, flexible substrates, long-term stability comparable to c-Si, and multiple pathways for deposition with room for innovation and evolutionary improvement. There is a huge market for TFSC even at today's efficiency if costs can be reduced. A brief window of opportunity exists for TFSC over the next few years due the Si shortage. The demonstrated capabilities and advantages of TFSC must be proclaimed more persistently to funding decision-makers and customers without minimizing the remaining

Volatile and non-volatile radiolysis products in irradiated multilayer coextruded food-packaging films containing a buried layer of recycled low-density polyethylene.

Science.gov (United States)

Chytiri, S; Goulas, A E; Badeka, A; Riganakos, K A; Kontominas, M G

2005-12-01

The effects of gamma-irradiation (5-60 kGy) on radiolysis products and sensory changes of experimental five-layer food-packaging films were determined. Films contained a middle buried layer of recycled low-density polyethylene (LDPE) comprising 25-50% by weight (bw) of the multilayer structure. Respective films containing 100% virgin LDPE as the buried layer were used as controls. Under realistic polymer/food simulant contact conditions during irradiation, a large number of primary and secondary radiolysis products (hydrocarbons, aldehydes, ketones, alcohols, carboxylic acids) were produced. These compounds were detected in the food simulant after contact with all films tested, even at the lower absorbed doses of 5 and 10 kGy (approved doses for food preservation). The type and concentration of radiolysis products increased progressively with increasing dose. Generally, there were no significant differences in radiolysis products between samples containing a buried layer of recycled LDPE and those containing virgin LDPE (all absorbed doses), indicating the good barrier properties of external virgin polymer layers. Volatile and non-volatile compounds produced during irradiation affected the sensory properties of potable water after contact with packaging films. Taste transfer to water was observed mainly at higher doses and was more noticeable for multilayer structures containing recycled LDPE, even though differences were slight.

In situ crystallized zirconium phenylphosphonate films with crystals vertically to the substrate and their hydrophobic, dielectric, and anticorrosion properties.

Science.gov (United States)

Cui, Zhaohui; Zhang, Fazhi; Wang, Lei; Xu, Sailong; Guo, Xiaoxiao

2010-01-05

The in situ crystallization technique has been utilized to fabricate zirconium phenylphosphonate (ZrPP) films with their hexagonal crystallite perpendicular to the copper substrate. The micro/nano roughness surface structure, as well as the intrinsic hydrophobic characteristic of the surface functional groups, affords ZrPP films excellent hydrophobicity with water contact angle (CA) ranging from 134 degrees to 151 degrees , without any low-surface-energy modification. Particularly, in the corrosive solutions such as acidic or basic solutions over a wide pH from 2 to 12, no obvious fluctuation in CA was observed for all the ZrPP film. The k values of the hydrophobic ZrPP films are in the low-k range (k feature is proposed to bear ZrPP film a more stable low-k value in an ambient atmosphere. Besides, the polarization current of ZrPP films is reduced by 2 orders of magnitude, compared to that of the untreated copper substrate. Even deposited in a vacuum oven for 30 days at room temperature, ZrPP films also show excellent corrosion resistance, indicating a stable anticorrosion property.

Superconducting properties of iron chalcogenide thin films

Directory of Open Access Journals (Sweden)

Paolo Mele

2012-01-01

Full Text Available Iron chalcogenides, binary FeSe, FeTe and ternary FeTexSe1−x, FeTexS1−x and FeTe:Ox, are the simplest compounds amongst the recently discovered iron-based superconductors. Thin films of iron chalcogenides present many attractive features that are covered in this review, such as: (i easy fabrication and epitaxial growth on common single-crystal substrates; (ii strong enhancement of superconducting transition temperature with respect to the bulk parent compounds (in FeTe0.5Se0.5, zero-resistance transition temperature Tc0bulk = 13.5 K, but Tc0film = 19 K on LaAlO3 substrate; (iii high critical current density (Jc ~ 0.5 ×106 A cm2 at 4.2 K and 0 T for FeTe0.5Se0.5 film deposited on CaF2, and similar values on flexible metallic substrates (Hastelloy tapes buffered by ion-beam assisted deposition with a weak dependence on magnetic field; (iv high upper critical field (~50 T for FeTe0.5Se0.5, Bc2(0, with a low anisotropy, γ ~ 2. These highlights explain why thin films of iron chalcogenides have been widely studied in recent years and are considered as promising materials for applications requiring high magnetic fields (20–50 T and low temperatures (2–10 K.

Low-temperature photoluminescence of CuSe2 nano-objects in selenium thin films

Directory of Open Access Journals (Sweden)

Martina Gilić

2017-06-01

Full Text Available Thin films of CuSe2 nanoparticles embedded in selenium matrix were prepared by vacuum evaporation method on a glass substrate at room temperature. The optical properties of the films were investigated by photoluminescence spectroscopy (T=20-300K and UV-VIS spectroscopy (T = 300K. Surface morphology was investigated by scanning electron microscopy. The band gap for direct transition in CuSe2 was found to be in the range of 2.72-2.75 eV and that for indirect transition is in the range of 1.71-1.75 eV determined by UV-VIS spectroscopy. On the other hand, selenium exhibits direct band gap in the range of 2.33-2.36 eV. All estimated band gaps slightly decrease with the increase of the film thickness. Photoluminescence spectra of the thin films clearly show emission bands at about 1.63 and 2.32 eV at room temperature, with no shift observed with decreasing temperature. A model was proposed for explaining such anomaly.

Ultra-low damping in lift-off structured yttrium iron garnet thin films

Science.gov (United States)

Krysztofik, A.; Coy, L. E.; Kuświk, P.; Załeski, K.; Głowiński, H.; Dubowik, J.

2017-11-01

We show that using maskless photolithography and the lift-off technique, patterned yttrium iron garnet thin films possessing ultra-low Gilbert damping can be accomplished. The films of 70 nm thickness were grown on (001)-oriented gadolinium gallium garnet by means of pulsed laser deposition, and they exhibit high crystalline quality, low surface roughness, and the effective magnetization of 127 emu/cm3. The Gilbert damping parameter is as low as 5 ×10-4. The obtained structures have well-defined sharp edges which along with good structural and magnetic film properties pave a path in the fabrication of high-quality magnonic circuits and oxide-based spintronic devices.

Polyhedral oligomeric silsequioxane monolayer as a nanoporous interlayer for preparation of low-k dielectric films

International Nuclear Information System (INIS)

Liu, Y-L; Liu, C-S; Cho, C-I; Hwu, M-J

2007-01-01

Polyhedral oligomeric silsequioxane (POSS) monomer was fixed to a silicon surface by reacting octakis(glycidyldimethylsiloxy)octasilsesquioxane (OG-POSS) with the OH-terminated silicon surface in the presence of tin (II) chloride. The POSS cage layer then served as a nanoporous interlayer to reduce the dielectric constants of polyimide films on silicon surfaces. The chemical structure and surface morphology of OG-POSS modified silicon surfaces were characterized with XPS. With the introduction of a POSS nanopored interlayer, the dielectric constants of polyimide films were reduced

Nuclear medium effects on the K{sup Macron Low-Asterisk} meson

Energy Technology Data Exchange (ETDEWEB)

Tolos, Laura, E-mail: tolos@ice.csic.es [Instituto de Ciencias del Espacio (IEEC/CSIC) Campus Universitat Autonoma de Barcelona, Facultat de Ciencies, Torre C5, E-08193 Bellaterra (Barcelona) (Spain); Molina, Raquel; Oset, Eulogio [Instituto de Fisica Corpuscular (centro mixto CSIC-UV), Institutos de Investigacion de Paterna, Aptdo. 22085, 46071 Valencia (Spain); Ramos, Angels [Departament d' Estructura i Constituents de la Materia, Universitat de Barcelona, Diagonal 647, 08028 Barcelona (Spain)

2012-05-01

The K{sup Macron Low-Asterisk} meson in dense matter is analyzed by means of a unitary approach in coupled channels based on the local hidden gauge formalism. The K{sup Macron Low-Asterisk} self-energy and the corresponding K{sup Macron Low-Asterisk} spectral function in the nuclear medium are obtained. We observe that the K{sup Macron Low-Asterisk} develops a width in matter up to five times bigger than in free space. We also estimate the transparency ratio of the {gamma}A{yields}K{sup +}K{sup Low-Asterisk -}A{sup Prime} reaction. This ratio is an excellent tool to detect experimentally modifications of the K{sup Macron Low-Asterisk} meson in dense matter.

Protein adsorption on low temperature alpha alumina films for surgical instruments

Energy Technology Data Exchange (ETDEWEB)

Cloud, A.N., E-mail: acloud@uark.ed [University of Arkansas, Fayetteville, AR 72701 (United States); Kumar, S. [Ian Wark Research Institute, University of South Australia, Mawson Lakes, Adelaide, SA 5095 (Australia); Kavdia, M.; Abu-Safe, H.H.; Gordon, M.H. [University of Arkansas, Fayetteville, AR 72701 (United States)

2009-08-31

Bulk alumina has been shown to exhibit reduced protein adsorption, a property that can be exploited for developing alumina-coated surgical instruments and devices. Alpha alumina thin films were deposited on surgical stainless steel substrates to investigate the adsorption of a model protein (BSA, bovine serum albumin). The films were deposited at 480 {sup o}C by AC inverted cylindrical magnetron sputtering. Films were obtained at 6 kW and 50% oxygen partial pressure by volume. The presence of alpha-phase alumina has been shown by transmission electron microscopy. Results indicate that there was a 50% reduction in protein adsorption for samples with the alumina coating compared to those with no coating.

Preparation of Nb3Ge films by chemical transport reaction and their critical properties

International Nuclear Information System (INIS)

Oya, G.; Saur, E.J.

1979-01-01

Niobium-germanium films have been deposited on sapphire substrates at 900 0 C by a chemical transport reaction method. The highest superconducting transition onset temperature T/sub C,on/ of 22.4K is observed for a nearly stoichiometric Nb 3 Ge film with the A15-type structure (thickness approx.93.5 μm). Lattice constants for the Nb 3 Ge phase formed in the Nb-Ge films with both T/sub C,on/ above 22 K and T/sub C,midpoint/ above 21 K are found to extend from 5.143 to 5.153 A. Deposition rates for the obtained films are in the range of 2-10 μm/min. Critical current densities for the Nb 3 Ge film with the highest T/sub C,on/ value are observed to be relatively low (approx.10 3 A/cm 2 at 19 K at self-field). This is due to the coarse grain structure of the film or the low density of effectual pinning centers in the film. Field variations of the pinning forces operating in this film in magnetic fields both parallel to the film surface and perpendicular to the film surface are found to follow closely b/sup 1/2/ (1-b) 2 , to which the pinning force for flux pinning at the surface of normal regions, such as grain boundaries, film surfaces, etc., is proportional, and where b is the reduced magnetic induction (B/B/sub C2/). A small increase in J/sub C/ at low fields is caused by the presence of a small amount of the Nb 5 Ge 3 phase in a Nb 3 Ge film, and seems attributable to additional flux pinning on Nb 5 Ge 3 -phase particles in the film

Low temperature growth of Co{sub 2}MnSi films on diamond semiconductors by ion-beam assisted sputtering

Energy Technology Data Exchange (ETDEWEB)

Nishiwaki, M.; Ueda, K., E-mail: k-ueda@numse.nagoya-u.ac.jp; Asano, H. [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)

2015-05-07

High quality Schottky junctions using Co{sub 2}MnSi/diamond heterostructures were fabricated. Low temperature growth at ∼300–400 °C by using ion-beam assisted sputtering (IBAS) was necessary to obtain abrupt Co{sub 2}MnSi/diamond interfaces. Only the Co{sub 2}MnSi films formed at ∼300–400 °C showed both saturation magnetization comparable to the bulk values and large negative anisotropic magnetoresistance, which suggests half-metallic nature of the Co{sub 2}MnSi films, of ∼0.3% at 10 K. Schottky junctions formed using the Co{sub 2}MnSi films showed clear rectification properties with rectification ratio of more than 10{sup 7} with Schottky barrier heights of ∼0.8 eV and ideality factors (n) of ∼1.2. These results indicate that Co{sub 2}MnSi films formed at ∼300–400 °C by IBAS are a promising spin source for spin injection into diamond semiconductors.

Submicrosecond linear pulse transformer for 800 kV voltage with modular low-inductance primary power supply

Energy Technology Data Exchange (ETDEWEB)

Bykov, Yu. A.; Krastelev, E. G., E-mail: ekrastelev@yandex.ru; Popov, G. V.; Sedin, A. A.; Feduschak, V. F. [Russian Academy of Sciences, Joint Institute for High Temperatures (Russian Federation)

2016-12-15

A pulsed power source with voltage amplitude up to 800 kV for fast charging (350–400 ns) of the forming line of a high-current nanosecond accelerator is developed. The source includes capacitive energy storage and a linear pulse transformer. The linear transformer consists of a set of 20 inductors with circular ferromagnetic cores surrounded by primary windings inside of which a common stock adder of voltage with film-glycerol insulation is placed. The primary energy storage consists of ten modules, each of which is a low-inductance assembly of two capacitors with a capacitance of 0.35 μF and one gas switch mounted in the same frame. The total energy stored in capacitors is 5.5 kJ at the operating voltage of 40 kV. According to test results, the parameters of the equivalent circuit of the source are the following: shock capacitance = 17.5 nF, inductance = 2 μH, resistance = 3.2 Ω.

Low-level dosimetry based on activation analysis of badge film, 1

International Nuclear Information System (INIS)

Morikawa, Kaoru; Yamashita, Kazuya; Inamoto, Kazuo; Maeda, Masayuki; Sato, Takashi; Ono, Koichi.

1988-01-01

Underexposed badge film contains a minor quantity of silver which corresponds to the low radiation dose even after completion of the photographic densitometry ; however, it cannot be detected with a photographic densitometer. We intended to clarify the minor silver content based on radioactivation analysis with thermal neutrons at KUR (Kyoto University Research Reactor). The natural silver consists of two stable nuclides, i.e., 107 Ag and 109 Ag. These can be activated with irradiation of thermal neutrons to two radionuclides, i.e., 108 Ag and 110 Ag. In this paper, through the activation analysis of an underexposed badge film, methods of measurements are shown regarding both 108 Ag produced by the 107 Ag (n, γ) reaction and 110 Ag by the 109 Ag (n, γ). After underexposed badge films were irradiated with thermal neutrons, some gamma-rays emitted from the radionuclides in the activated films were measured with a high pure Ge detector or a NaI (Tl) scintillation detector. The following results were obtained: (1) several elements such as silver, iodine, gold, antimony, manganese and copper were detected by activation analyses of films exposed to low level 60 Co gamma-rays, (2) the exposure vs 108 Ag or 110 Ag activity curve was linear in the lower dose range of 60 Co gamma-rays. These data indicate that low level radiation doses, which is indeterminable by ordinary photographic densitometry, can be estimated by activation analysis of silver atoms in badge films. (author)

Deposition of highly oriented (K,Na)NbO₃ films on flexible metal substrates

DEFF Research Database (Denmark)

Grivel, Jean-Claude; Thydén, Karl; Bowen, Jacob R.

2018-01-01

In view of developing flexible, highly textured Pb-free piezoelectric thin films, (K,Na)NbO3 was deposited by chemical solution deposition on cube-textured Ni-W alloy substrates. After heat treatment, a strong (001)pc out-of-plane preferential orientation is created in the (K,Na)NbO3 layer, which...

Film sheet cassette

International Nuclear Information System (INIS)

1981-01-01

A novel film sheet cassette is described for handling CAT photographic films under daylight conditions and facilitating their imaging. A detailed description of the design and operation of the cassette is given together with appropriate illustrations. The resulting cassette is a low-cost unit which is easily constructed and yet provides a sure light-tight seal for the interior contents of the cassette. The individual resilient fingers on the light-trap permit the ready removal of the slide plate for taking pictures. The stippled, non-electrostatic surface of the pressure plate ensures an air layer and free slidability of the film for removal and withdrawal of the film sheet. The advantage of the daylight system is that a darkroom need not be used for inserting and removing the film in and out of the cassette resulting in a considerable time saving. (U.K.)

Comparison of water degradation of YBaCuO superconducting films made from different structures

International Nuclear Information System (INIS)

Chang, C.; Tsai, J.A.

1988-01-01

Immersion of YBaCuO superconducting films in water has shown a large difference in degradation between structures with and without silver. For the structures containing silver layers and depositing at a high temperature, superconducting films with zero resistance at 87 K remain superconductive at 77 K after 5 h immersion in water, with an increase in room-temperature film resistance by a factor of 4; the contact resistance remains low after 60 h of immersion, allowing the measurement at low temperatures. For the structures containing no silver and depositing at room temperature, the contact resistance rapidly increases with immersion times, making the measurement at 77 K difficult after 5 min of immersion. Changes in the sharpness of the superconductive transition, and structures of the films due to the water immersion are also compared

Chemical vapor deposition of amorphous ruthenium-phosphorus alloy films

International Nuclear Information System (INIS)

Shin Jinhong; Waheed, Abdul; Winkenwerder, Wyatt A.; Kim, Hyun-Woo; Agapiou, Kyriacos; Jones, Richard A.; Hwang, Gyeong S.; Ekerdt, John G.

2007-01-01

Chemical vapor deposition growth of amorphous ruthenium-phosphorus films on SiO 2 containing ∼ 15% phosphorus is reported. cis-Ruthenium(II)dihydridotetrakis-(trimethylphosphine), cis-RuH 2 (PMe 3 ) 4 (Me = CH 3 ) was used at growth temperatures ranging from 525 to 575 K. Both Ru and P are zero-valent. The films are metastable, becoming increasingly more polycrystalline upon annealing to 775 and 975 K. Surface studies illustrate that demethylation is quite efficient near 560 K. Precursor adsorption at 135 K or 210 K and heating reveal the precursor undergoes a complex decomposition process in which the hydride and trimethylphosphine ligands are lost at temperatures as low at 280 K. Phosphorus and its manner of incorporation appear responsible for the amorphous-like character. Molecular dynamics simulations are presented to suggest the local structure in the films and the causes for phosphorus stabilizing the amorphous phase

Epitaxial effects in thin films of high-Tc cuprates with the K2NiF4 structure

Science.gov (United States)

Naito, Michio; Sato, Hisashi; Tsukada, Akio; Yamamoto, Hideki

2018-03-01

La2-xSrxCuO4 (LSCO) and La2-xBaxCuO4 (LBCO) have been recognized as the archetype materials of "hole-doped" high-Tc superconductors. Their crystal structures are relatively simple with a small number of constituent cation elements. In addition, the doping level can be varied by the chemical substitution over a wide range enough to obtain the full spectrum of doping-dependent electronic and magnetic properties. These attractive features have dedicated many researchers to thin-film growth of LSCO and LBCO. The critical temperature (Tc) of LSCO and LBCO is sensitive to strain as manifested by a positive pressure coefficient of Tc in bulk samples. In general, films are strained if they are grown on lattice-mismatched substrates (epitaxial strain). Early attempts (before 1997) at the growth of LSCO and LBCO films resulted in depressed Tc below 30 K as they were grown on a commonly used SrTiO3 substrate (in-plane lattice parameter asub = 3.905 Å): the in-plane lattice parameters of LSCO and LBCO are ≤3.80 Å, and hence tensile epitaxial strain is introduced. The situation was changed by the use of LaSrAlO4 substrates with a slightly shorter in-plane lattice constant (asub = 3.756 Å). On LaSrAlO4 substrates, the Tc reaches 45 K in La1.85Sr0.15CuO4, 47 K in La1.85Ba0.15CuO4, and 56 K in ozone-oxidized La2CuO4+δ films, substantially higher than the Tc's of the bulk compounds. The Tc increase in La1.85Sr0.15CuO4 films on LaSrAlO4 and decrease on SrTiO3 are semi-quantitatively in accord with the phenomenological estimations based on the anisotropic strain coefficients of Tc (dTc/dεi). In this review article, we describe the growth and properties of films of cuprates having the K2NiF4 structure, mainly focusing on the increase/decrease of Tc by epitaxial strain and quasi-stable phase formation by epitaxial stabilization. We further extract the structural and/or physical parameters controlling Tc toward microscopic understanding of the variation of Tc by epitaxial strain.

Antibacterial and barrier properties of oriented polymer films with ZnO thin films applied with atomic layer deposition at low temperatures

International Nuclear Information System (INIS)

Vähä-Nissi, Mika; Pitkänen, Marja; Salo, Erkki; Kenttä, Eija; Tanskanen, Anne; Sajavaara, Timo; Putkonen, Matti; Sievänen, Jenni; Sneck, Asko; Rättö, Marjaana; Karppinen, Maarit; Harlin, Ali

2014-01-01

Concerns on food safety, and need for high quality and extended shelf-life of packaged foods have promoted the development of antibacterial barrier packaging materials. Few articles have been available dealing with the barrier or antimicrobial properties of zinc oxide thin films deposited at low temperature with atomic layer deposition (ALD) onto commercial polymer films typically used for packaging purposes. The purpose of this paper was to study the properties of ZnO thin films compared to those of aluminum oxide. It was also possible to deposit ZnO thin films onto oriented polylactic acid and polypropylene films at relatively low temperatures using ozone instead of water as an oxidizing precursor for diethylzinc. Replacing water with ozone changed both the structure and the chemical composition of films deposited on silicon wafers. ZnO films deposited with ozone contained large grains covered and separated probably by a more amorphous and uniform layer. These thin films were also assumed to contain zinc salts of carboxylic acids. The barrier properties of a 25 nm ZnO thin film deposited with ozone at 100 °C were quite close to those obtained earlier with ALD Al 2 O 3 of similar apparent thickness on similar polymer films. ZnO thin films deposited at low temperature indicated migration of antibacterial agent, while direct contact between ZnO and Al 2 O 3 thin films and bacteria promoted antibacterial activity. - Highlights: • Thin films were grown from diethylzinc also with ozone instead of water at 70 and 100 °C. • ZnO films deposited with diethylzinc and ozone had different structures and chemistries. • Best barrier properties obtained with zinc oxide films close to those obtained with Al 2 O 3 • Ozone as oxygen source provided better barrier properties at 100 °C than water. • Both aluminum and zinc oxide thin films showed antimicrobial activity against E. coli

Antibacterial and barrier properties of oriented polymer films with ZnO thin films applied with atomic layer deposition at low temperatures

Energy Technology Data Exchange (ETDEWEB)

Vähä-Nissi, Mika, E-mail: mika.vaha-nissi@vtt.fi [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044, VTT (Finland); Pitkänen, Marja; Salo, Erkki; Kenttä, Eija [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044, VTT (Finland); Tanskanen, Anne, E-mail: Anne.Tanskanen@aalto.fi [Aalto University, School of Chemical Technology, Department of Chemistry, Laboratory of Inorganic Chemistry, P.O. Box 16100, FI-00076 Aalto (Finland); Sajavaara, Timo, E-mail: timo.sajavaara@jyu.fi [University of Jyväskylä, Department of Physics, P.O. Box 35, FI-40014 Jyväskylä (Finland); Putkonen, Matti; Sievänen, Jenni; Sneck, Asko; Rättö, Marjaana [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044, VTT (Finland); Karppinen, Maarit, E-mail: Maarit.Karppinen@aalto.fi [Aalto University, School of Chemical Technology, Department of Chemistry, Laboratory of Inorganic Chemistry, P.O. Box 16100, FI-00076 Aalto (Finland); Harlin, Ali [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044, VTT (Finland)

2014-07-01

Concerns on food safety, and need for high quality and extended shelf-life of packaged foods have promoted the development of antibacterial barrier packaging materials. Few articles have been available dealing with the barrier or antimicrobial properties of zinc oxide thin films deposited at low temperature with atomic layer deposition (ALD) onto commercial polymer films typically used for packaging purposes. The purpose of this paper was to study the properties of ZnO thin films compared to those of aluminum oxide. It was also possible to deposit ZnO thin films onto oriented polylactic acid and polypropylene films at relatively low temperatures using ozone instead of water as an oxidizing precursor for diethylzinc. Replacing water with ozone changed both the structure and the chemical composition of films deposited on silicon wafers. ZnO films deposited with ozone contained large grains covered and separated probably by a more amorphous and uniform layer. These thin films were also assumed to contain zinc salts of carboxylic acids. The barrier properties of a 25 nm ZnO thin film deposited with ozone at 100 °C were quite close to those obtained earlier with ALD Al{sub 2}O{sub 3} of similar apparent thickness on similar polymer films. ZnO thin films deposited at low temperature indicated migration of antibacterial agent, while direct contact between ZnO and Al{sub 2}O{sub 3} thin films and bacteria promoted antibacterial activity. - Highlights: • Thin films were grown from diethylzinc also with ozone instead of water at 70 and 100 °C. • ZnO films deposited with diethylzinc and ozone had different structures and chemistries. • Best barrier properties obtained with zinc oxide films close to those obtained with Al{sub 2}O{sub 3} • Ozone as oxygen source provided better barrier properties at 100 °C than water. • Both aluminum and zinc oxide thin films showed antimicrobial activity against E. coli.

Nanocrystalline SiC film thermistors for cryogenic applications

Science.gov (United States)

Mitin, V. F.; Kholevchuk, V. V.; Semenov, A. V.; Kozlovskii, A. A.; Boltovets, N. S.; Krivutsa, V. A.; Slepova, A. S.; Novitskii, S. V.

2018-02-01

We developed a heat-sensitive material based on nanocrystalline SiC films obtained by direct deposition of carbon and silicon ions onto sapphire substrates. These SiC films can be used for resistance thermometers operating in the 2 K-300 K temperature range. Having high heat sensitivity, they are relatively low sensitive to the magnetic field. The designs of the sensors are presented together with a discussion of their thermometric characteristics and sensitivity to magnetic fields.

Low-voltage bendable pentacene thin-film transistor with stainless steel substrate and polystyrene-coated hafnium silicate dielectric.

Science.gov (United States)

Yun, Dong-Jin; Lee, Seunghyup; Yong, Kijung; Rhee, Shi-Woo

2012-04-01

The hafnium silicate and aluminum oxide high-k dielectrics were deposited on stainless steel substrate using atomic layer deposition process and octadecyltrichlorosilane (OTS) and polystyrene (PS) were treated improve crystallinity of pentacene grown on them. Besides, the effects of the pentacene deposition condition on the morphologies, crystallinities and electrical properties of pentacene were characterized. Therefore, the surface treatment condition on dielectric and pentacene deposition conditions were optimized. The pentacene grown on polystyrene coated high-k dielectric at low deposition rate and temperature (0.2-0.3 Å/s and R.T.) showed the largest grain size (0.8-1.0 μm) and highest crystallinity among pentacenes deposited various deposition conditions, and the pentacene TFT with polystyrene coated high-k dielectric showed excellent device-performance. To decrease threshold voltage of pentacene TFT, the polystyrene-thickness on high-k dielectric was controlled using different concentration of polystyrene solution. As the polystyrene-thickness on hafnium silicate decreases, the dielectric constant of polystyrene/hafnium silicate increases, while the crystallinity of pentacene grown on polystyrene/hafnium silicate did not change. Using low-thickness polystyrene coated hafnium silicate dielectric, the high-performance and low voltage operating (pentacene thin film transistor (μ: ~2 cm(2)/(V s), on/off ratio, >1 × 10(4)) and complementary inverter (DC gains, ~20) could be fabricated.

Thermal stability of gold-PS nanocomposites thin films

Indian Academy of Sciences (India)

Low-temperature transmission electron microscopy (TEM) studies were performed on polystyrene (PS, w = 234 K) – Au nanoparticle composite thin films that were annealed up to 350°C under reduced pressure conditions. The composite thin films were prepared by wet chemical approach and the samples were then ...

Off Axis Growth of Strontium Titanate Films with High Dielectric Constant Tuning and Low Loss

Science.gov (United States)

Kampangkeaw, Satreerat

2002-03-01

Using off-axis pulsed laser deposition, we have grown strontium titanate (STO) films on neodymium gallate (NGO) and lanthanum aluminate (LAO) substrates. We measured the film dielectric constant and loss tangent as a function of temperature in the 10kHz to 1 MHz frequency range. We found that the loss is less than 0.01 We also obtained a figure of merit from the relative variation of the dielectric constant divided by the loss tangent. The obtained figured of merit at 35K and 1MHz is about 1000 comparable to bulk values. The dielectric constant of these films can be changed by a factor of 4-8 in the presence of a DC electric field up to 5V/μm. The films show significant variations of dielectric properties grown on different substrates at different locations respect to the axis of the plume. The STO films on LAO having high dielectric constant and dielectric tuning were grown in region near the center of the plume. On the other hand, STO on NGO shows this effect only on the films grown far from the plume axis.

Thermoelectric effects of amorphous Ga-Sn-O thin film

Science.gov (United States)

Matsuda, Tokiyoshi; Uenuma, Mutsunori; Kimura, Mutsumi

2017-07-01

The thermoelectric effects of an amorphous Ga-Sn-O (a-GTO) thin film have been evaluated as a physical parameter of a novel oxide semiconductor. Currently, a-GTO thin films are greatly desired not only because they do not contain rare metals and are therefore free from problems on the exhaustion of resources and the increase in cost but also because their initial characteristics and performance stabilities are excellent when they are used in thin-film transistors. In this study, an a-GTO thin film was deposited on a quartz substrate by RF magnetron sputtering and postannealing was performed in air at 350 °C for 1 h using an annealing furnace. The Seebeck coefficient and electrical conductivity of the a-GTO thin film were -137 µV/K and 31.8 S/cm at room temperature, and -183 µV/K and 43.8 S/cm at 397 K, respectively, and as a result, the power factor was 1.47 µW/(cm·K2) at 397 K; these values were roughly as high as those of amorphous In-Ga-Zn-O (a-IGZO) thin films. Therefore, a-GTO thin films will be a candidate material for thermoelectric devices fabricated in a large area at a low cost by controlling the carrier mobility, carrier density, device structures, and so forth.

Nanocomposite oxide thin films grown by pulsed energy beam deposition

International Nuclear Information System (INIS)

Nistor, M.; Petitmangin, A.; Hebert, C.; Seiler, W.

2011-01-01

Highly non-stoichiometric indium tin oxide (ITO) thin films were grown by pulsed energy beam deposition (pulsed laser deposition-PLD and pulsed electron beam deposition-PED) under low oxygen pressure. The analysis of the structure and electrical transport properties showed that ITO films with a large oxygen deficiency (more than 20%) are nanocomposite films with metallic (In, Sn) clusters embedded in a stoichiometric and crystalline oxide matrix. The presence of the metallic clusters induces specific transport properties, i.e. a metallic conductivity via percolation with a superconducting transition at low temperature (about 6 K) and the melting and freezing of the In-Sn clusters in the room temperature to 450 K range evidenced by large changes in resistivity and a hysteresis cycle. By controlling the oxygen deficiency and temperature during the growth, the transport and optical properties of the nanocomposite oxide films could be tuned from metallic-like to insulating and from transparent to absorbing films.

Metal-insulator transition in tin doped indium oxide (ITO thin films: Quantum correction to the electrical conductivity

Directory of Open Access Journals (Sweden)

Deepak Kumar Kaushik

2017-01-01

Full Text Available Tin doped indium oxide (ITO thin films are being used extensively as transparent conductors in several applications. In the present communication, we report the electrical transport in DC magnetron sputtered ITO thin films (prepared at 300 K and subsequently annealed at 673 K in vacuum for 60 minutes in low temperatures (25-300 K. The low temperature Hall effect and resistivity measurements reveal that the ITO thin films are moderately dis-ordered (kFl∼1; kF is the Fermi wave vector and l is the electron mean free path and degenerate semiconductors. The transport of charge carriers (electrons in these disordered ITO thin films takes place via the de-localized states. The disorder effects lead to the well-known ‘metal-insulator transition’ (MIT which is observed at 110 K in these ITO thin films. The MIT in ITO thin films is explained by the quantum correction to the conductivity (QCC; this approach is based on the inclusion of quantum-mechanical interference effects in Boltzmann’s expression of the conductivity of the disordered systems. The insulating behaviour observed in ITO thin films below the MIT temperature is attributed to the combined effect of the weak localization and the electron-electron interactions.

Metal-insulator transition in tin doped indium oxide (ITO) thin films: Quantum correction to the electrical conductivity

Science.gov (United States)

Kaushik, Deepak Kumar; Kumar, K. Uday; Subrahmanyam, A.

2017-01-01

Tin doped indium oxide (ITO) thin films are being used extensively as transparent conductors in several applications. In the present communication, we report the electrical transport in DC magnetron sputtered ITO thin films (prepared at 300 K and subsequently annealed at 673 K in vacuum for 60 minutes) in low temperatures (25-300 K). The low temperature Hall effect and resistivity measurements reveal that the ITO thin films are moderately dis-ordered (kFl˜1; kF is the Fermi wave vector and l is the electron mean free path) and degenerate semiconductors. The transport of charge carriers (electrons) in these disordered ITO thin films takes place via the de-localized states. The disorder effects lead to the well-known `metal-insulator transition' (MIT) which is observed at 110 K in these ITO thin films. The MIT in ITO thin films is explained by the quantum correction to the conductivity (QCC); this approach is based on the inclusion of quantum-mechanical interference effects in Boltzmann's expression of the conductivity of the disordered systems. The insulating behaviour observed in ITO thin films below the MIT temperature is attributed to the combined effect of the weak localization and the electron-electron interactions.

Novel 99mTc(III)-azide complexes [99mTc(N3)(CDO)(CDOH)2B-R] (CDOH2 = cyclohexanedione dioxime) as potential radiotracers for heart imaging

International Nuclear Information System (INIS)

Liu, Min; Zheng, Yumin; Avcibasi, Ugur; Liu, Shuang

2016-01-01

Introduction: In this study, novel 99m Tc(III)-azide complexes [ 99m Tc(N 3 )(CDO)(CDOH) 2 B-R] ( 99m Tc-ISboroxime-N 3 : R = IS; 99m Tc-MPboroxime-N 3 : R = MP; 99m Tc-PAboroxime-N 3 : R = PA; 99m Tc-PYboroxime-N 3 : R = PY; and 99m Tc-Uboroxime-N 3 : R = 5U) were evaluated as heart imaging agents. Methods: Complexes [ 99m Tc(N 3 )(CDO)(CDOH) 2 B-R] (R = IS, MP, PA, PY and 5U) were prepared by ligand exchange between NaN 3 and [ 99m TcCl(CDO)(CDOH) 2 B-R]. Biodistribution and imaging studies were carried out in Sprague–Dawley rats. Image quantification was performed to compare their initial heart uptake and myocardial retention. Results: 99m Tc-ISboroxime-N 3 , 99m Tc-PYboroxime-N 3 and 99m Tc-Uboroxime-N 3 were prepared with high RCP (93–98%) while the RCP of 99m Tc-MPboroxime-N 3 and 99m Tc-PAboroxime-N 3 was 80–85%. The myocardial retention curves of 99m Tc-ISboroxime-N 3 , 99m Tc-PYboroxime-N 3 and 99m Tc-Uboroxime-N 3 were best fitted to the bi-exponential decay function. The half-time of the fast component was 1.6 ± 0.4 min for 99m Tc-ISboroxime-N 3 , 0.7 ± 0.1 min for 99m Tc-PYboroxime-N 3 and 0.9 ± 0.4 min for 99m Tc-Uboroxime-N 3 . The 2-min heart uptake from biodistribution studies followed the ranking order of 99m Tc-ISboroxime-N 3 (3.60 ± 0.68%ID/g) > 99m Tc-PYboroxime-N 3 (2.35 ± 0.37%ID/g) ≫ 99m Tc-Uboroxime-N 3 (1.29 ± 0.06%ID/g). 99m Tc-ISboroxime-N 3 had the highest 2-min heart uptake among 99m Tc radiotracers revaluated in SD rats. High quality SPECT images were obtained with the right and left ventricular walls being clearly delineated. The best image acquisition window was 0–5 min for 99m Tc-ISboroxime-N 3 . Conclusion: Both azide coligand and boronate caps had significant impact on the heart uptake and myocardial retention of complexes [ 99m Tc(N 3 )(CDO)(CDOH) 2 B-R]. Among the radiotracers evaluated in SD rats, 99m Tc-ISboroxime-N 3 has the highest initial heart uptake with the heart retention comparable to that of 99m Tc

Low energy electron beam processing of YBCO thin films

Energy Technology Data Exchange (ETDEWEB)

Chromik, Š., E-mail: stefan.chromik@savba.sk [Institute of Electrical Engineering, SAS, Dúbravská cesta 9, 841 04 Bratislava (Slovakia); Camerlingo, C. [CNR-SPIN, Istituto Superconduttori, Materiali Innovativi e Dispositivi, via Campi Flegrei 34, 80078 Pozzuoli (Italy); Sojková, M.; Štrbík, V.; Talacko, M. [Institute of Electrical Engineering, SAS, Dúbravská cesta 9, 841 04 Bratislava (Slovakia); Malka, I.; Bar, I.; Bareli, G. [Department of Physics, Ben Gurion University of the Negev, P.O.B. 653, 84105 Beer Sheva (Israel); Jung, G. [Department of Physics, Ben Gurion University of the Negev, P.O.B. 653, 84105 Beer Sheva (Israel); Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw (Poland)

2017-02-15

Highlights: • Improvement of superconducting properties of irradiated bridges under certain conditions. • 30 keV irradiation influence CuO{sub 2} planes as well as oxygen chains. • Direct confirmation of changes in oxygen chains using micro-Raman spectroscopy. • Possibility of electron writing. - Abstract: Effects of low energy 30 keV electron irradiation of superconducting YBa{sub 2}Cu{sub 3}O{sub 7−δ} thin films have been investigated by means of transport and micro-Raman spectroscopy measurements. The critical temperature and the critical current of 200 nm thick films initially increase with increasing fluency of the electron irradiation, reach the maximum at fluency 3 − 4 × 10{sup 20} electrons/cm{sup 2}, and then decrease with further fluency increase. In much thinner films (75 nm), the critical temperature increases while the critical current decreases after low energy electron irradiation with fluencies below 10{sup 20} electrons/cm{sup 2}. The Raman investigations suggest that critical temperature increase in irradiated films is due to healing of broken Cu−O chains that results in increased carrier’s concentration in superconducting CuO{sub 2} planes. Changes in the critical current are controlled by changes in the density of oxygen vacancies acting as effective pinning centers for flux vortices. The effects of low energy electron irradiation of YBCO turned out to result from a subtle balance of many processes involving oxygen removal, both by thermal activation and kick-off processes, and ordering of chains environment by incident electrons.

Electro-physical properties of a Si-based MIS structure with a low-k SiOC(-H) film

Energy Technology Data Exchange (ETDEWEB)

Zakirov, Anvar Sagatovich; Navamathavan, Rangaswamy; Kim, Seung Hyun; Jang, Yong Jun; Jung, An Soo; Choi, Chi Kyu [Cheju National University, Jeju (Korea, Republic of)

2006-09-15

SiOC(-H) films with low dielectric constants have been prepared by using plasma enhanced chemical vapor deposition with a mixture of methyltriethoxysilane and oxygen precursors. The C-V characteristics of the structures, Al/SiOC(-H)/p-Si(100), were studied in the forward and the reverse directions by applying a polarizing potential. We found that the ratio of the maximum to the minimum capacitance (C{sub ma}x{sub /}C{sub min}) depended on the [MTES/(MTES+O{sub 2})] flow rate ratio. Annealed samples exhibited even greater reductions of the maximum capacitance and the dielectric constant of the SiOC(-H) samples. After annealing at 400 .deg. C, the measurement in the reverse direction revealed an interesting behavior in the form of strongly pronounced 'steps'. The bonds between Si-O and the -CH{sub 3} group reduced the surface charge density, and the distribution of the surface charge density depended on [MTES/(MTES+O{sub 2})] flow rate ratio and the annealing temperature because the fixed positive (Si-CH{sub 3}){sup +} and negative (Si-O){sup -} changed the configuration at the SiOC(-H)/p-Si(100) interface. The SiOC(-H) film had donor (O{sub 2}) and acceptor (Si-CH{sub 3} -groups) levels, and the electronic process at the SiOC(-H)/p-Si(100) interface was defined by the (Si-CH{sub 3}){sup +} and the (Si-O){sup -} bonds.

Surface resistances of 5-cm-diameter YBCO films prepared by MOD for microwave applications

International Nuclear Information System (INIS)

Manabe, T.; Sohma, M.; Yamaguchi, I.; Tsukada, K.; Kondo, W.; Kamiya, K.; Tsuchiya, T.; Mizuta, S.; Kumagai, T.

2006-01-01

Large-area high-T c superconducting films with low surface resistances R s are required for use in microwave applications such as band pass filters. In this paper, preparation of 5-cm-diameter YBCO films on LaAlO 3 (LAO) and CeO 2 -buffered sapphire (CbS) substrates by metalorganic deposition (MOD) using a fluorine-free coating solution and their superconducting properties are described. The optimum firing conditions for YBCO films greatly depend on the substrate materials; a heating rate at ramp as high as 200 deg. C /min is necessary for films on LAO whereas a lower heating rate, e.g., 20 deg. C /min, is required for films on CbS. Accordingly, the suitable furnace systems for these substrates have been varied. As a result, a YBCO film with high J c (77 K) of 2.7 MA/cm 2 and a low R s (12 GHz, 77 K) of 0.54 mΩ was prepared on LAO by using an infrared image furnace. On the other hand, a YBCO film with a higher J c (77 K) of 4.0 MA/cm 2 and the same R s (12 GHz, 77 K) of 0.54 mΩ was prepared on CbS by using a tube furnace

P K Dutta

Indian Academy of Sciences (India)

Volume 34 Issue 1 February 2011 pp 29-35. Chitosan–silver oxide nanocomposite film: Preparation and antimicrobial activity · Shipra Tripathi G K Mehrotra P K Dutta · More Details Abstract Fulltext PDF. The chitosan–silver oxide encapsulated nanocomposite film was prepared by solution casting method. The prepared film ...

K-K-K-Kuninga kõne / Peter Conradi ; tõlkinud Kadri Karro

Index Scriptorium Estoniae

Conradi, Peter

2011-01-01

The Sunday Timesi ajakirjanik valgustab filmi "Kuninga kõne" (režissöör Tom Hooper, Inglise-Austraalia-USA, 2010) tagamaid. Film räägib kuningas George VI elust ja tema kõnedefektist, kogelemisest. Kuningat aitas Austraalia päritolu kõneterapeut Lionel Logue. Filmi stsenaariumi kirjutas David Seidler

Thickness dependent growth of low temperature atomic layer deposited zinc oxide films

International Nuclear Information System (INIS)

Montiel-González, Z.; Castelo-González, O.A.; Aguilar-Gama, M.T.; Ramírez-Morales, E.; Hu, H.

2017-01-01

Highlights: • Polycrystalline columnar ZnO thin films deposited by ALD at low temperatures. • Higher deposition temperature leads to a greater surface roughness in the ALD ZnO films. • Higher temperature originates larger refractive index values of the ALD ZnO films. • ZnO thin films were denser as the numbers of ALD deposition cycles were larger. • XPS analysis revels mayor extent of the DEZ reaction during the ALD process. - Abstract: Zinc oxide films are promising to improve the performance of electronic devices, including those based on organic materials. However, the dependence of the ZnO properties on the preparation conditions represents a challenge to obtain homogeneous thin films that satisfy specific applications. Here, we prepared ZnO films of a wide range of thicknesses by atomic layer deposition (ALD) at relatively low temperatures, 150 and 175 °C. From the results of X-ray photoelectron spectroscopy, X-ray diffraction and Spectroscopic Ellipsometry it is concluded that the polycrystalline structure of the wurtzite is the main phase of the ALD samples, with OH groups on their surface. Ellipsometry revealed that the temperature and the deposition cycles have a strong effect on the films roughness. Scanning electron micrographs evidenced such effect, through the large pyramids developed at the surface of the films. It is concluded that crystalline ZnO thin films within a broad range of thickness and roughness can be obtained for optic or optoelectronic applications.

An ultrahigh vacuum, low-energy ion-assisted deposition system for III-V semiconductor film growth

Science.gov (United States)

Rohde, S.; Barnett, S. A.; Choi, C.-H.

1989-06-01

A novel ion-assisted deposition system is described in which the substrate and growing film can be bombarded with high current densities (greater than 1 mA/sq cm) of very low energy (10-200 eV) ions. The system design philosophy is similar to that used in III-V semiconductor molecular-beam epitaxy systems: the chamber is an all-metal ultrahigh vacuum system with liquid-nitrogen-cooled shrouds, Knudsen-cell evaporation sources, a sample insertion load-lock, and a 30-kV reflection high-energy electron diffraction system. III-V semiconductor film growth is achieved using evaporated group-V fluxes and group-III elemental fluxes sputtered from high-purity targets using ions extracted from a triode glow discharge. Using an In target and an As effusion cell, InAs deposition rates R of 2 microns/h have been obtained. Epitaxial growth of InAs was observed on both GaSb(100) and Si(100) substrates.

Digital Image Quantitative Evaluations for Low Cost Film Digitizers Height Determination

International Nuclear Information System (INIS)

Khairul Anuar Mohd Salleh; Arshad Yassin; Ahmad Nasir Yusof; Noorhazleena Azaman

2016-01-01

Non Destructive Testing (NDT) technology contributes significant improvement to the quality of industrial products, and the integrity of equipment and plants. Introduction of powerful computers and reliable imaging technology has had significant impact on the traditional nuclear based NDT technology. Demand for faster, reliable, low cost, and flexible technology is rapidly increased. With the growing demand for more efficient digital archiving, digital image analysis, and reporting results with a low cost technology, one cannot deny the importance of having another cheaper solution. This project will apply fundamental principle of image digitization to be used in building up a low cost film digitization solution. The height of the film digitization was carefully determined by examining each digital images produced. Three (3) repetitive quantitative evaluations (Modulation Transfer Function [MTF], Characteristic Transfer Curve [CTC], and Contrast to Noise Ratio [CNR]) were performed at different condition to assist with the determination of the low cost film digitizers height. All 3 evaluations were successfully applied and the most appropriate height was successfully determined. (author)

K Narasimha Rao

Indian Academy of Sciences (India)

Home; Journals; Bulletin of Materials Science. K Narasimha Rao. Articles written in Bulletin of Materials Science. Volume 26 Issue 2 February 2003 pp 239-245 Thin Films. Studies on thin film materials on acrylics for optical applications · K Narasimha Rao · More Details Abstract Fulltext PDF. Deposition of durable thin film ...

Experimental study on flow characteristics of a vertically falling film flow of liquid metal NaK in a transverse magnetic field

International Nuclear Information System (INIS)

Li Fengchen; Serizawa, Akimi

2004-01-01

Experimental study was carried out on the characteristics of a vertically falling film flow of liquid metal sodium-potassium alloy (NaK-78) in a vertical square duct in the presence of a transverse magnetic field. The magnitude of the applied magnetic field was up to 0.7 T. The Reynolds number, defined by the hydraulic diameter based on the wetted perimeter length and the liquid average velocity, ranged from 8.0x10 3 to 3.0x10 4 . The free surfaces of the falling film flows in both a stainless steel and an acrylic resin channels were visualized. The instantaneous film thickness of the falling film flow in the acrylic resin channel was then measured by means of the ultrasonic transmission technique. Magnetohydrodynamic (MHD) effects on the characteristics of the falling film flow were investigated by the visualization and the statistical analysis of the measured film thickness. It was found that the falling liquid NaK film was thickened and the flow was stabilized remarkably by a strong transverse magnetic field. A bifurcation of the film was recovered by the applied magnetic field. The turbulence of the flow was substantially suppressed

Static and Dynamic Water Motion-Induced Instability in Oxide Thin-Film Transistors and Its Suppression by Using Low-k Fluoropolymer Passivation.

Science.gov (United States)

Choi, Seungbeom; Jo, Jeong-Wan; Kim, Jaeyoung; Song, Seungho; Kim, Jaekyun; Park, Sung Kyu; Kim, Yong-Hoon

2017-08-09

Here, we report static and dynamic water motion-induced instability in indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) and its effective suppression with the use of a simple, solution-processed low-k (ε ∼ 1.9) fluoroplastic resin (FPR) passivation layer. The liquid-contact electrification effect, in which an undesirable drain current modulation is induced by a dynamic motion of a charged liquid such as water, can cause a significant instability in IGZO TFTs. It was found that by adopting a thin (∼44 nm) FPR passivation layer for IGZO TFTs, the current modulation induced by the water-contact electrification was greatly reduced in both off- and on-states of the device. In addition, the FPR-passivated IGZO TFTs exhibited an excellent stability to static water exposure (a threshold voltage shift of +0.8 V upon 3600 s of water soaking), which is attributed to the hydrophobicity of the FPR passivation layer. Here, we discuss the origin of the current instability caused by the liquid-contact electrification as well as various static and dynamic stability tests for IGZO TFTs. On the basis of our findings, we believe that the use of a thin, solution-processed FPR passivation layer is effective in suppressing the static and dynamic water motion-induced instabilities, which may enable the realization of high-performance and environment-stable oxide TFTs for emerging wearable and skin-like electronics.

Zirconia thin film preparation by wet chemical methods at low temperature

NARCIS (Netherlands)

Popovici, M.; Graaf, de J.; Verschuuren, M.A.; Graat, P.C.J.; Verheijen, M.A.

2010-01-01

In this study the preparation of zirconia thin films with a high refractive index at low temperature is aimed for. Two non-hydrolytic type approaches of wet chemical synthesis are presented. Both by sol–gel and colloid chemistry, highly transmissive, smooth thin films of zirconia cubic and/or

Ultra low nanowear in novel chromium/amorphous chromium carbide nanocomposite films

Science.gov (United States)

Yate, Luis; Martínez-de-Olcoz, Leyre; Esteve, Joan; Lousa, Arturo

2017-10-01

In this work, we report the first observation of novel nanocomposite thin films consisting of nanocrystalline chromium embedded in an amorphous chromium carbide matrix (nc-Cr/a-CrC) with relatively high hardness (∼22,3 GPa) and ultra low nanowear. The films were deposited onto silicon substrates using a magnetic filtered cathodic arc deposition system at various negative bias voltages, from 50 to 450 V. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) suggested the co-existence of chromium and chromium carbide phases, while high resolution transmission electron microscopy (HRTEM) confirmed the presence of the nc-Cr/a-CrC structure. The friction coefficient measured with the ball-on disk technique and the nanowear results showed a strong correlation between the macro and nano-tribological properties of the samples. These novel nanocomposite films show promising properties as solid lubricant and wear resistant coatings with relatively high hardness, low friction coefficient and ultra low nanowear.

Extraction and dielectric properties of curcuminoid films grown on Si substrate for high-k dielectric applications

Energy Technology Data Exchange (ETDEWEB)

Dakhel, A.A.; Jasim, Khalil E. [Department of Physics, College of Science, University of Bahrain, P.O. Box 32038 (Bahrain); Cassidy, S. [Department of Basic Medical Sciences, Royal College of Surgeons in Ireland, Medical University of Bahrain, P.O. Box 15503 (Bahrain); Henari, F.Z., E-mail: fzhenari@rcsi-mub.com [Department of Basic Medical Sciences, Royal College of Surgeons in Ireland, Medical University of Bahrain, P.O. Box 15503 (Bahrain)

2013-09-20

Highlights: • The unknown insulating properties of curcuminoid extract are systematically studied. • Optical study gives a bandgap of 3.15 eV and a refractive index of 1.92 at 505 nm. • Turmeric is a high-k environmental friendly material for use in microelectronics. • Curcuminoid extract can be used as insulator of MIS devices with ε{sup ′}{sub ∞}≈54.2. -- Abstract: Curcuminoids were extracted from turmeric powder and evaporated in vacuum to prepare thin films on p-Si and glass substrates for dielectric and optical investigations. The optical absorption spectrum of the prepared amorphous film was not identical to that of the molecular one, which was identified by a strong wide absorption band in between ∼220 and 540 nm. The onset energy of the optical absorption of the film was calculated by using Hamberg et al. method. The dielectric properties of this material were systematically studied for future eco friendly applications in metal–insulator–semiconductor MIS field of applications. The complex dielectric properties were studied in the frequency range of 1–1000 kHz and was analysed in-terms of dielectric impedance Z{sup *}(ω) and modulus M{sup *}(ω). Generally, the curcuminoid complex can be considered as a high-k material and can be used in the environmental friendly production of microelectronic devices.

Extraction and dielectric properties of curcuminoid films grown on Si substrate for high-k dielectric applications

International Nuclear Information System (INIS)

Dakhel, A.A.; Jasim, Khalil E.; Cassidy, S.; Henari, F.Z.

2013-01-01

Highlights: • The unknown insulating properties of curcuminoid extract are systematically studied. • Optical study gives a bandgap of 3.15 eV and a refractive index of 1.92 at 505 nm. • Turmeric is a high-k environmental friendly material for use in microelectronics. • Curcuminoid extract can be used as insulator of MIS devices with ε ′ ∞ ≈54.2. -- Abstract: Curcuminoids were extracted from turmeric powder and evaporated in vacuum to prepare thin films on p-Si and glass substrates for dielectric and optical investigations. The optical absorption spectrum of the prepared amorphous film was not identical to that of the molecular one, which was identified by a strong wide absorption band in between ∼220 and 540 nm. The onset energy of the optical absorption of the film was calculated by using Hamberg et al. method. The dielectric properties of this material were systematically studied for future eco friendly applications in metal–insulator–semiconductor MIS field of applications. The complex dielectric properties were studied in the frequency range of 1–1000 kHz and was analysed in-terms of dielectric impedance Z * (ω) and modulus M * (ω). Generally, the curcuminoid complex can be considered as a high-k material and can be used in the environmental friendly production of microelectronic devices

Tungsten oxide thin film exposed to low energy D and He plasma: evidence for a thermal enhancement of the erosion yield

Science.gov (United States)

Hijazi, Hussein; Martin, C.; Roubin, P.; Addab, Y.; Cabie, C.; Pardanaud, C.; Bannister, M.; Meyer, F.

2017-10-01

Nanocrystalline tungsten oxide thin films (25 nm - 250 nm thickness) produced by thermal oxidation of a tungsten substrate were exposed to low energy D and He plasma. Low energy D plasma exposure (11 eV/D+) of these films have resulted in the formation of a tungsten bronze (DxWO3) clearly observed by Raman microscopy. D plasma bombardment (4 1021 m-2) has also induced a color change of the oxide layer which is similar to the well-known electro-chromic effect and has been named ``plasma-chromic effect''. To unravel physical and chemical origins of the modifications observed under exposure, similar tungsten oxide films were also exposed to low energy helium plasma (20 eV/He+) . Due to the low fluence (4 1021 m-2) and low ion energy (20 eV), at room temperature, He exposure has induced only very few morphological and structural modifications. On the contrary, at 673 K, significant erosion is observed, which gives evidence for an unexpected thermal enhancement of the erosion yield. We present here new results concerning He beam exposures at low fluence (4 1021 m-2) varying the He+ energy from 20 eV to 320 eV to measure the tungsten oxide sputtering threshold energy. Detailed analyses before/after exposure to describe the D and He interaction with the oxide layer, its erosion and structural modification at the atomic and micrometer scale will be presented.

Comparative evaluation of corrosion behaviour of type K thin film thermocouple and its bulk counterpart

International Nuclear Information System (INIS)

Mukherjee, S.K.; Barhai, P.K.; Srikanth, S.

2011-01-01

Highlights: → Anodic vacuum arc deposited chromel and alumel films are more 'noble' in 5% NaCl solution than their respective wires. → Chromel undergoes localised corrosion while alumel shows uniform corrosion. → Virgin samples of chromel-alumel TFTCs exhibit good thermoelectric response. → Their thermoelectric outputs remain largely unaffected when shelved under normal atmospheric conditions. → After 288 h of exposure in salt spray environment, their thermoelectric outputs show noticeable change due to size effects. - Abstract: This paper investigates the corrosion behaviour of type K thermoelements and their thin films, and compares the performance of chromel-alumel thin film thermocouple with its wire counterpart before and after exposure to 5% NaCl medium. Potentiodynamic polarisation tests reveal that chromel and alumel films are more 'noble' than their respective wires. Alumel corrodes faster when coupled with chromel in films than as wires. Secondary electron micrographs and electrochemical impedance spectroscopy measurements suggest that chromel shows localised corrosion while alumel undergoes uniform corrosion. Corrosion adversely affects the thermocouple output and introduces an uncertainty in the measurement.

A low-frequency MEMS piezoelectric energy harvester with a rectangular hole based on bulk PZT film

Science.gov (United States)

Tian, Yingwei; Li, Guimiao; Yi, Zhiran; Liu, Jingquan; Yang, Bin

2018-06-01

This paper presents a high performance piezoelectric energy harvester (PEH) with a rectangular hole to work at low-frequency. This PEH used thinned bulk PZT film on flexible phosphor bronze, and its structure included piezoelectric layer, supporting layer and proof mass to reduce the resonant frequency of the device. Here, thinned bulk PZT thick film was used as piezoelectric layer due to its high piezoelectric coefficient. A Phosphor bronze was deployed as supporting layer because it had better flexibility compared to silicon and could work under high acceleration ambient with good durability. The maximum open-circuit voltage of the PEH was 15.7 V at low resonant frequency of 34.3 Hz when the input vibration acceleration was 1.5 g (g = 9.81 m/s2). Moreover, the maximum output power, the output power density and the actually current at the same acceleration were 216.66 μW, 1713.58 μW/cm3 and 170 μA, respectively, when the optimal matched resistance of 60 kΩ was connected. The fabricated PEH scavenged the vibration energy of the vacuum compression pump and generated the maximum output voltage of 1.19 V.

Solution-deposited CIGS thin films for ultra-low-cost photovoltaics

Science.gov (United States)

Eldada, Louay A.; Hersh, Peter; Stanbery, Billy J.

2010-09-01

We describe the production of photovoltaic modules with high-quality large-grain copper indium gallium selenide (CIGS) thin films obtained with the unique combination of low-cost ink-based precursors and a reactive transfer printing method. The proprietary metal-organic inks contain a variety of soluble Cu-, In- and Ga- multinary selenide materials; they are called metal-organic decomposition (MOD) precursors, as they are designed to decompose into the desired precursors. Reactive transfer is a two-stage process that produces CIGS through the chemical reaction between two separate precursor films, one deposited on the substrate and the other on a printing plate in the first stage. In the second stage, these precursors are rapidly reacted together under pressure in the presence of heat. The use of two independent thin films provides the benefits of independent composition and flexible deposition technique optimization, and eliminates pre-reaction prior to the synthesis of CIGS. In a few minutes, the process produces high quality CIGS films, with large grains on the order of several microns, and preferred crystallographic orientation, as confirmed by compositional and structural analysis by XRF, SIMS, SEM and XRD. Cell efficiencies of 14% and module efficiencies of 12% were achieved using this method. The atmospheric deposition processes include slot die extrusion coating, ultrasonic atomization spraying, pneumatic atomization spraying, inkjet printing, direct writing, and screen printing, and provide low capital equipment cost, low thermal budget, and high throughput.

Characterization of sputter deposited thin film scandate cathodes for miniaturized thermionic converter applications

Science.gov (United States)

Zavadil, Kevin R.; Ruffner, Judith H.; King, Donald B.

1999-01-01

We have successfully developed a method for fabricating scandate-based thermionic emitters in thin film form. The primary goal of our effort is to develop thin film emitters that exhibit low work function, high intrinsic electron emissivity, minimum thermal activation properties and that can be readily incorporated into a microgap converter. Our approach has been to incorporate BaSrO into a Sc2O3 matrix using rf sputtering to produce thin films. Diode testing has shown the resulting films to be electron emissive at temperatures as low as 900 K with current densities of 0.1 mA.cm-2 at 1100 K and saturation voltages. We calculate an approximate maximum work function of 1.8 eV and an apparent emission constant (Richardson's constant, A*) of 36 mA.cm-2.K-2. Film compositional and structural analysis shows that a significant surface and subsurface alkaline earth hydroxide phase can form and probably explains the limited utilization and stability of Ba and its surface complexes. The flexibility inherent in sputter deposition suggests alternate strategies for eliminating undesirable phases and optimizing thin film emitter properties.

Radiochromic film dosimetry

International Nuclear Information System (INIS)

Soares, Christopher G.

2006-01-01

The object of this paper is to give a new user some practical information on the use of radiochromic films for medical applications. While various aspects of radiochromic film dosimetry for medical applications have been covered in some detail in several other excellent review articles which have appeared in the last few years [Niroomand-Rad, A., Blackwell, C.R., Coursey, B.M., Gall, K.P., McLaughlin, W.L., Meigooni, A.S., Nath, R., Rodgers, J.E., Soares, C.G., 1998. Radiochromic dosimetry: recommendations of the AAPM Radiation Therapy Committee Task Group 55. Med. Phys. 25, 2093-2115; Dempsey, J.F., Low, D.A., Mutic, S., Markman, J., Kirov, A.S., Nussbaum, G.H., Williamson, J.F., 2000. Validation of a precision radiochromic film dosimetry system for quantitative two-dimensional imaging of acute exposure dose distributions. Med. Phys. 27, 2462-2475; Butson, M.J., Yu, P.K.N., Cheung, T., Metcalfe, P., 2003. Radiochromic film for medical radiation dosimetry. Mater. Sci. Eng. R41, 61-120], it is the intent of the present author to present material from a more user-oriented and practical standpoint. That is, how the films work will be stressed much less than how to make the films work well. The strength of radiochromic films is most evident in applications where there is a very high dose gradient and relatively high absorbed dose rates. These conditions are associated with brachytherapy applications, measurement of small fields, and at the edges (penumbra regions) of larger fields

Low-field tunnel-type magnetoresistance properties of polycrystalline and epitaxial La sub 0 sub . sub 6 sub 7 Sr sub 0 sub . sub 3 sub 3 MnO sub 3 thin films

CERN Document Server

Shim, I B; Choi, S Y

2000-01-01

The low-field tunnel-type magnetoresistance (TMB) properties of sol-gel derived polycrystalline and epitaxial La sub 0 sub . sub 6 sub 7 Sr sub 0 sub . sub 3 sub 3 MnO sub 3 (LSMO) thin films were investigated. The polycrystalline thin films were fabricated on Si (100) with a thermally oxidized SiO sub 2 layer while the epitaxial thin films were grown on LaAlO sub 3 (001) single-crystal substrates. The epitaxial thin films displayed both typical intrinsic colossal magnetoresistance (CMR) and abnormal extrinsic tunnel-type magnetoresistance behaviors. Tunnel-type MR ratio as high as 0.4% were observed in the polycrystalline thin films at a field of 120 Oe at room temperature (300 K) whereas the ratios were less than 0.1% for the epitaxial films in the same field range. The low-field tunnel-type MR of polycrystalline LSMO/SiO sub 2 ?Si (100) thin films originated from the behaviors of the grain-boundary properties.

Enhanced thermoelectric properties of bismuth telluride-organic hybrid films via graphene doping

International Nuclear Information System (INIS)

Rahman, Airul Azha Abd; Umar, Akrajas Ali; Salleh, Muhamad Mat; Chen, Xiaomei; Oyama, Munetaka

2016-01-01

The thermoelectric properties of graphene-doped bismuth telluride-PEDOT:PSS-glycerol (hybrid) films were investigated. Prior to the study, p-type and n-type hybrid films were prepared by doping the PEDOT:PSS-glycerol with the p- and n-type bismuth telluride. Graphene-doped hybrid films were prepared by adding graphene particles of concentration ranging from 0.02 to 0.1 wt% into the hybrid films. Films of graphene-doped hybrid system were then prepared on a glass substrate using a spin-coating technique. It was found that the electrical conductivity of the hybrid films increases with the increasing of the graphene-dopant concentration and optimum at 0.08 wt% for both p- and n-type films, namely 400 and 195 S/cm, respectively. Further increasing in the concentration caused a decreasing in the electrical conductivity. Analysis of the thermoelectric properties of the films obtained that the p-type film exhibited significant improvement in its thermoelectric properties, where the thermoelectric properties increased with the increasing of the doping concentration. Meanwhile, for the case of n-type film, graphene doping showed a negative effect to the thermoelectrical properties, where the thermoelectric properties decreased with the increasing of doping concentration. Seebeck coefficient (and power factor) for optimum p-type and n-type hybrid thin films, i.e., doped with 0.08 wt% of graphene, is 20 μV/K (and 160 μW m -1 K -2 ) and 10 μV/K (and 19.5 μW m -1 K -2 ), respectively. The obtained electrical conductivity and thermoelectric properties of graphene-doped hybrid film are interestingly several orders higher than the pristine hybrid films. A thermocouple device fabricated utilizing the p- and n-type graphene-doped hybrid films can generate an electric voltage as high as 2.2 mV under a temperature difference between the hot-side and the cold-side terminal as only low as 55 K. This is equivalent to the output power as high as 24.2 nW (for output load as high as 50

Glow discharge-deposited amorphous silicon films for low-cost solar cells

Energy Technology Data Exchange (ETDEWEB)

Grabmaier, J G; Plaettner, R D; Stetter, W [Siemens A.G., Muenchen (Germany, F.R.). Forschungslaboratorien

1980-01-01

Due to their high absorption constant, glow discharge-deposited amorphous silicon (a-Si) films are of great interest for low-cost solar cells. Using SiH/sub 4/ and SiX/sub 4//H/sub 2/ (X = Cl or F) gas mixtures in an inductively or capacitively excited reactor, a-Si films with thicknesses up to several micrometers were deposited on substrates of glass, silica and silicon. The optical and electrical properties of the films were determined by measuring the IR absorption spectra, dark conductivity, photoconductivity, and photoluminescence. Hydrogen, chlorine, or fluorine were incorporated in the films in order to passivate dangling bonds in the amorphous network.

C K Maiti

Indian Academy of Sciences (India)

Home; Journals; Bulletin of Materials Science. C K Maiti. Articles written in Bulletin of Materials Science. Volume 24 Issue 6 December 2001 pp 579-582 Thin Films. Metallo–organic compound-based plasma enhanced CVD of ZrO2 films for microelectronic applications · S Chatterjee S K Samanta H D Banerjee C K Maiti.

Leakage current behavior in lead-free ferroelectric (K,Na)NbO3-LiTaO3-LiSbO3 thin films

Science.gov (United States)

Abazari, M.; Safari, A.

2010-12-01

Conduction mechanisms in epitaxial (001)-oriented pure and 1 mol % Mn-doped (K0.44,Na0.52,Li0.04)(Nb0.84,Ta0.1,Sb0.06)O3 (KNN-LT-LS) thin films on SrTiO3 substrate were investigated. Temperature dependence of leakage current density was measured as a function of applied electric field in the range of 200-380 K. It was shown that the different transport mechanisms dominate in pure and Mn-doped thin films. In pure (KNN-LT-LS) thin films, Poole-Frenkel emission was found to be responsible for the leakage, while Schottky emission was the dominant mechanism in Mn-doped thin films at higher electric fields. This is a remarkable yet clear indication of effect of 1 mol % Mn on the resistive behavior of such thin films.

Direct current magnetron sputtering deposition of InN thin films

International Nuclear Information System (INIS)

Cai Xingmin; Hao Yanqing; Zhang Dongping; Fan Ping

2009-01-01

In this paper, InN thin films were deposited on Si (1 0 0) and K9 glass by reactive direct current magnetron sputtering. The target was In metal with the purity of 99.999% and the gases were Ar (99.999%) and N 2 (99.999%). The properties of InN thin films were studied. Scanning electron microscopy (SEM) shows that the film surface is very rough and energy dispersive X-ray spectroscopy (EDX) shows that the film contains In, N and very little O. X-ray diffraction (XRD) and Raman scattering reveal that the film mainly contains hexagonal InN. The four-probe measurement shows that InN film is conductive. The transmission measurement demonstrates that the transmission of InN deposited on K9 glass is as low as 0.5% from 400 nm to 800 nm.

Low temperature fabrication of CuxO thin-film transistors and investigation on the origin of low field effect mobility

Science.gov (United States)

Shijeesh, M. R.; Jayaraj, M. K.

2018-04-01

Cuprous (Cu2O) and cupric (CuO) oxide thin films have been deposited by radio frequency magnetron sputtering with two different oxygen partial pressures. The as-deposited copper oxide films were subjected to post-annealing at 300 °C for 30 min to improve the microstructural, morphological, and optical properties of thin films. Optical absorption studies revealed the existence of a large number of subgap states inside CuO films than Cu2O films. Cu2O and CuO thin film transistors (TFTs) were fabricated in an inverted staggered structure by using a post-annealed channel layer. The field effect mobility values of Cu2O and CuO TFTs were 5.20 × 10-4 cm2 V-1 s-1 and 2.33 × 10-4 cm2 V-1 s-1, respectively. The poor values of subthreshold swing, threshold voltage, and field effect mobility of the TFTs were due to the charge trap density at the copper oxide/dielectric interface as well as defect induced trap states originated from the oxygen vacancies inside the bulk copper oxide. In order to study the distribution of the trap states in the Cu2O and CuO active layer, the temperature dependent transfer characteristics of transistors in the temperature range between 310 K and 340 K were studied. The observed subgap states were found to be decreasing exponentially inside the bandgap, with CuO TFT showing higher subgap states than Cu2O TFT. The high-density hole trap states in the CuO channel are one of the plausible reasons for the lower mobility in CuO TFT than in Cu2O TFT. The origin of these subgap states was attributed to the impurities or oxygen vacancies present in the CuO channel layer.

Bulk photovoltaic effect in epitaxial (K, Nb) substituted BiFeO3 thin films

Science.gov (United States)

Agarwal, Radhe; Zheng, Fan; Sharma, Yogesh; Hong, Seungbum; Rappe, Andrew; Katiyar, Ram

We studied the bulk photovoltaic effect in epitaxial (K, Nb) modified BiFeO3 (BKFNO) thin films using theoretical and experimental methods. Epitaxial BKFNO thin films were grown by pulsed laser deposition (PLD). First, we have performed first principles density function theory (DFT) using DFT +U method to calculate electronic band structure, including Hubbard-Ueff (Ueff =U-J) correction into Hamiltonian. The electronic band structure calculations showed a direct band gap at 1.9 eV and a defect level at 1.7 eV (in a 40 atom BKFNO supercell), sufficiently lower in comparison to the experimentally observed values. Furthermore, the piezoforce microscopy (PFM) measurements indicated the presence of striped polydomains in BKFNO thin films. Angle-resolved PFM measurements were also performed to find domain orientation and net polarization directions in these films. The experimental studies of photovoltaic effect in BKNFO films showed a short circuit current of 59 micro amp/cm2 and open circuit voltage of 0.78 V. We compared our experimental results with first principles shift current theory calculations of bulk photovoltaic effect (BPVE).The synergy between theory and experimental results provided a realization of significant role of BPVE in order to understand the photovoltaic mechanism in ferroelectrics.

ZnO-PVA nanocomposite films for low threshold optical limiting applications

International Nuclear Information System (INIS)

Viswanath, Varsha; Beenakumari, C.; Muneera, C. I.

2014-01-01

Zinc oxide-PVA nanocomposite films were fabricated adopting a simple method based on solution-casting, incorporating small weight percentages ( −3 M to 7×10 −3 M), and their structure, morphology, linear and low threshold nonlinear optical properties were investigated. The films were characterized as nanostructured ZnO encapsulated between the molecules/chains of the semicrystalline host polymer PVA. The samples exhibited low threshold nonlinear absorption and negative nonlinear refraction, as studied using the Z-scan technique. A switchover from SA to RSA was observed as the concentration of ZnO was increased. The optical limiting of 632.8 nm CW laser light displayed by these nanocomposite films is also demonstrated. The estimated values of the effective coefficients of nonlinear absorption, nonlinear refraction and third-order nonlinear susceptibility, |χ (3) |, compared to those reported for continuous wave laser light excitation, measure up to the highest among them. The results show that the ZnO-PVA nanocomposite films have great potential applications in future optical and photonic devices

Low energy ion implantation and high energy heavy ion irradiation in C60 films

International Nuclear Information System (INIS)

Narayanan, K.L.; Yamaguchi, M.; Dharmarasu, N.; Kojima, N.; Kanjilal, D.

2001-01-01

C 60 films have been bombarded with low energy boron ions and high energy swift heavy ions (SHI) of silver and oxygen at different doses. Raman scattering and Fourier transform infrared (FTIR) studies were carried out on the virgin and irradiated films and the results are in good agreement with each other. The films subject to low energy boron ion implantation showed destruction of the bukky balls whereas the films subject to high energy ion irradiation did not show appreciable effects on their structure. These results indicate that C 60 films are more prone to defects by elastic collision and subsequent implantation at lower energy. Irradiation at higher energy was less effective in creating appreciable defects through electronic excitation by inelastic collisions at similar energy density

Lanthanum gallate substrates for epitaxial high-temperature superconducting thin films

Science.gov (United States)

Sandstrom, R. L.; Giess, E. A.; Gallagher, W. J.; Segmuller, A.; Cooper, E. I.

1988-11-01

It is demonstrated that lanthanum gallate (LaGaO3) has considerable potential as an electronic substrate material for high-temperature superconducting films. It provides a good lattice and thermal expansion match to YBa2Cu3O(7-x), can be grown in large crystal sizes, is compatible with high-temperature film processing, and has a reasonably low dielectric constant and low dielectric losses. Epitaxial YBa2Cu3O(7-x) films grown on LaGaO3 single-crystal substrates by three techniques have zero resistance between 87 and 91 K.

Preparation of SDC electrolyte thin films on dense and porous substrates by modified sol-gel route

International Nuclear Information System (INIS)

Lin Hongfei; Ding, Changsheng; Sato, Kazuhisa; Tsutai, Yoshifumi; Ohtaki, Hiromichi; Iguchi, Mabito; Wada, Chiharu; Hashida, Toshiyuki

2008-01-01

Nanocrystalline fluorite type samarium doped ceria (SDC) electrolyte thin film for intermediate temperature-solid oxide fuel cells (IT-SOFCs) application were prepared on the dense and porous substrates at low temperatures of 573-1373 K using a novel citrate sol-gel route combined with a sol suspension spray coating technique. Thermogravimetric analysis showed that the decomposition of the citrate gel film and the initial crystallization of the SDC occurred at a low temperature of about 590 K. XRD examination revealed that the annealing of the green film at temperatures of 573-1373 K provided cubic nanocrystalline SDC phase. The crystallite sizes were in the range of 9-19 nm. Microscopic observations indicated that the derived film was homogeneous, dense and crack-free without pinholes. The desired thickness for preparation of thin electrolyte films from hundreds of nm to several μm should be controllable and feasible by repeating the simple and inexpensive citrate sol-gel spray coating process

Flexo-green Polypyrrole – Silver nanocomposite films for thermoelectric power generation

International Nuclear Information System (INIS)

Bharti, Meetu; Singh, Ajay; Samanta, Soumen; Debnath, A.K.; Aswal, D.K.; Muthe, K.P.; Gadkari, S.C.

2017-01-01

Graphical abstract: Flexible PPy-Ag films prepared via environment friendly photo-polymerization in aqueous medium exhibited a record figure-of-merit of ∼7.4 × 10 −3 at 335 K among reported PPy based composites due to unique combination of high electrical and low thermal conductivity with increasing content of Ag nanoparticles. A proto-type thermoelectric power generator exhibiting output voltage of 6 mV has been demonstrated using these flexible PPy-Ag films. - Highlights: • Polypyrrole-silver (PPy-Ag) nanocomposites films were prepared on flexible BOPET sheet. • Ag particles anchored between PPy chains improve electrical transport but suppress thermal transport. • This work demonstrates highest figure-of-merit (∼7.4 × 10 −3 at 335 K) among PPy based materials. • A prototype thermoelectric power generator exhibiting output voltage of 6 mV has been fabricated using PPy-Ag films. - Abstract: Conducting polymers offer various advantages over inorganic thermoelectric materials such as eco-friendliness, a reduced manufacturing cost, flexibility, low thermal conductivity and amenability to tuning of electrical properties through doping; have recently drawn much attention for conversion of low temperature waste heat (≤150 °C) into electricity. In this study, we investigated the thermoelectric properties of hybrid films of polypyrrole and silver (PPy-Ag). These films were prepared on biaxially oriented polyethylene terephthalate (BOPET) flexible substrates by eco-friendly one pot photo-polymerization method using aqueous solution of silver nitrate (AgNO 3 ) as photo initiator. Detailed characterization of the samples revealed that morphology of composite films reorganized with the change in AgNO 3 concentration during synthesis. Increasing AgNO 3 concentrations resulted in PPy films containing Ag nanoparticles, nanoclusters as well as macroclusters. With alteration in concentration and size of Ag particles in PPy matrix, it has been observed that the

Photoluminescence characteristics of low indium composition InGaN thin films grown on sapphire by metalorganic chemical vapor deposition

International Nuclear Information System (INIS)

Feng, Z.C.; Liu, W.; Chua, S.J.; Yu, J.W.; Yang, C.C.; Yang, T.R.; Zhao, J.

2006-01-01

The wavelength shifts in the photoluminescence (PL) from low indium composition (∼ 3%) InGaN epitaxial thin films, grown on sapphire substrates by metalorganic chemical vapour deposition, has been studied by a combination of experiment and theory. As temperature increases from 6 K, the PL peak energy red-shifts very slightly first, then blue-shifts to reach a maximum at near 100 K, and red-shifts again till room temperature. This unique PL behaviour, indicating the existence of the phase separation, is interpreted qualitatively from the spatial variation of band structure due to the In-compositional fluctuation. Theoretical calculation, based upon a model involving the band-tail states in the radiative recombination, explains the experimental data successfully

Low hydrogen containing amorphous carbon films - Growth and electrochemical properties as lithium battery anodes

Energy Technology Data Exchange (ETDEWEB)

Subramanian, V.; Masarapu, Charan; Wei, Bingqing [Department of Mechanical Engineering, University of Delaware, 130 Academy Street, Newark, DE 19716 (United States); Karabacak, Tansel [Department of Applied Science, University of Arkansas at Little Rock, 2801 South University Avenue, Little Rock, AR 72204 (United States); Teki, Ranganath [Department of Chemical and Biological Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180 (United States); Lu, Toh-Ming [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, NY 12180 (United States)

2010-04-02

Amorphous carbon films were deposited successfully on Cu foils by DC magnetron sputtering technique. Electrochemical performance of the film as lithium battery anode was evaluated across Li metal at 0.2 C rate in a non-aqueous electrolyte. The discharge curves showed unusually low irreversible capacity in the first cycle with a reversible capacity of {proportional_to}810 mAh g{sup -1}, which is at least 2 times higher than that of graphitic carbon. For the first time we report here an amorphous carbon showing such a high reversibility in the first cycle, which is very much limited to the graphitic carbon. The deposited films were extensively characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and step profilometer for the structural and surface properties. The hydrogen content of the synthesized films was studied using residual gas analysis (RGA). The low hydrogen content and the low specific surface area of the synthesized amorphous carbon film are considered responsible for such a high first cycle columbic efficiency. The growth mechanism and the reasons for enhanced electrochemical performance of the carbon films are discussed. (author)

Low hydrogen containing amorphous carbon films-Growth and electrochemical properties as lithium battery anodes

Science.gov (United States)

Subramanian, V.; Karabacak, Tansel; Masarapu, Charan; Teki, Ranganath; Lu, Toh-Ming; Wei, Bingqing

Amorphous carbon films were deposited successfully on Cu foils by DC magnetron sputtering technique. Electrochemical performance of the film as lithium battery anode was evaluated across Li metal at 0.2 C rate in a non-aqueous electrolyte. The discharge curves showed unusually low irreversible capacity in the first cycle with a reversible capacity of ∼810 mAh g -1, which is at least 2 times higher than that of graphitic carbon. For the first time we report here an amorphous carbon showing such a high reversibility in the first cycle, which is very much limited to the graphitic carbon. The deposited films were extensively characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and step profilometer for the structural and surface properties. The hydrogen content of the synthesized films was studied using residual gas analysis (RGA). The low hydrogen content and the low specific surface area of the synthesized amorphous carbon film are considered responsible for such a high first cycle columbic efficiency. The growth mechanism and the reasons for enhanced electrochemical performance of the carbon films are discussed.

Bubble-assisted film evaporation correlation for saline water at sub-atmospheric pressures in horizontal-tube evaporator

KAUST Repository

Shahzad, Muhammad Wakil; Myat, Aung; Chun, Won Gee; Ng, Kim Choon

2013-01-01

film boiling on horizontal tubes, but working at low pressures of 0.93-3.60 kPa (corresponding solution saturation temperatures of 279-300 K) as well as seawater salinity of 15,000 to 90,000 mg/l or ppm. Owing to a dearth of literature on film

High quality uniform YBCO film growth by the metalorganic deposition using trifluoroacetates

Energy Technology Data Exchange (ETDEWEB)

Wang, S.S., E-mail: wangssh@tsinghua.edu.cn [Key Laboratory of Micro-nano Measurement, Manipulation and Physics (Beihang University), Ministry of Education, Beijing 100191 (China); Beijing Dingchen Superconducting Technology Co., Ltd., Beijing 100084 (China); Zhang, Z.L. [Key Laboratory of Micro-nano Measurement, Manipulation and Physics (Beihang University), Ministry of Education, Beijing 100191 (China); Wang, L. [Applied superconductivity research center, Department of Physics, Tsinghua University, Beijing 100084 (China); Gao, L.K.; Liu, J. [Beijing Dingchen Superconducting Technology Co., Ltd., Beijing 100084 (China)

2017-03-15

Highlights: • High quality double-sided YBCO films are fabricated on LaAlO3 substrates by TFA-MOD method with diameters up to 2 in. • Large area YBCO films were very uniform in microstructure and thickness distribution, an average inductive Jc in excess of 6 MA/cm{sup 2} and low R{sub s} (10 GHz) of 0.3 mΩ at 77 K were obtained. • It will greatly promoted the research and applications of large-area YBCO films by chemical solution method. - Abstract: A need exists for the large-area superconducting YBa{sub 2}Cu{sub 3}O{sub 7-x} (YBCO) films with high critical current density for microwave communication and/or electric power applications. Trifluoroacetic metalorganic (TFA-MOD) method is a promising low cost technique for large-scale production of YBCO films, because it does not need high vacuum device and is easily applicable to substrates of various shape and size. In this paper, double-sided YBCO films with maximum 2 in diameter were prepared on LaAlO{sub 3} substrates by TFA-MOD method. Inductive critical current densitiy J{sub c}, microwave surface resistance R{sub s}, as well as the microstructure were characterized. A newly homemade furnace system was used to epitaxially grown YBCO films, which can improve the uniformity of YBCO film significantly by gas supply and temperature distribution proper design. Results showed that the large area YBCO films were very uniform in microstructure and thickness distribution, an average inductive J{sub c} in excess of 6 MA/cm{sup 2} with uniform distribution, and low R{sub s} (10 GHz) below 0.3 mΩ at 77 K were obtained. Andthe film filter may be prepared to work at temperatures lower than 74 K. These results are very close to the highest value of YBCO films made by conventional vacuum method, so we show a very promising route for large-scale production of high quality large-area YBCO superconducting films at a lower cost.

Low temperature aluminum nitride thin films for sensory applications

Energy Technology Data Exchange (ETDEWEB)

Yarar, E.; Zamponi, C.; Piorra, A.; Quandt, E., E-mail: eq@tf.uni-kiel.de [Institute for Materials Science, Chair for Inorganic Functional Materials, Kiel University, D-24143 Kiel (Germany); Hrkac, V.; Kienle, L. [Institute for Materials Science, Chair for Synthesis and Real Structure, Kiel University, D-24143 Kiel (Germany)

2016-07-15

A low-temperature sputter deposition process for the synthesis of aluminum nitride (AlN) thin films that is attractive for applications with a limited temperature budget is presented. Influence of the reactive gas concentration, plasma treatment of the nucleation surface and film thickness on the microstructural, piezoelectric and dielectric properties of AlN is investigated. An improved crystal quality with respect to the increased film thickness was observed; where full width at half maximum (FWHM) of the AlN films decreased from 2.88 ± 0.16° down to 1.25 ± 0.07° and the effective longitudinal piezoelectric coefficient (d{sub 33,f}) increased from 2.30 ± 0.32 pm/V up to 5.57 ± 0.34 pm/V for film thicknesses in the range of 30 nm to 2 μm. Dielectric loss angle (tan δ) decreased from 0.626% ± 0.005% to 0.025% ± 0.011% for the same thickness range. The average relative permittivity (ε{sub r}) was calculated as 10.4 ± 0.05. An almost constant transversal piezoelectric coefficient (|e{sub 31,f}|) of 1.39 ± 0.01 C/m{sup 2} was measured for samples in the range of 0.5 μm to 2 μm. Transmission electron microscopy (TEM) investigations performed on thin (100 nm) and thick (1.6 μm) films revealed an (002) oriented AlN nucleation and growth starting directly from the AlN-Pt interface independent of the film thickness and exhibit comparable quality with the state-of-the-art AlN thin films sputtered at much higher substrate temperatures.

High J{sub c} YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} Films via Rapid, Low pO{sub 2} Pyrolysis

Energy Technology Data Exchange (ETDEWEB)

DAWLEY,JEFFREY T.; CLEM,PAUL G.; SIEGAL,MICHAEL P.; OVERMYER,DONALD L.

2000-09-21

In this investigation, YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} (YBCO) films were fabricated via a metal acetate, trifluoroacetic acid based sol-gel route, and spin-coat deposited on (100) LaAlO{sub 3} with a focus on maximizing J{sub c}, while minimizing processing time. We demonstrate that the use of a low pO{sub 2} atmosphere during the pyrolysis stage can lead to at least a tetiold reduction in pyrolysis time, compared to a 1 atm. O{sub 2} ambient. High-quality YBCO films on LaAlO{sub 3}, with J{sub c} values up to 3 MA/cm{sup 2} at 77 K, can be routinely crystallized from these rapidly pyrolyzed films.

Deuterium release from Li-D films exposed to atmospheric gases

Energy Technology Data Exchange (ETDEWEB)

Gasparyan, Yu. M., E-mail: YMGasparyan@mephi.ru [National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Kashirskoe highway 31, Moscow (Russian Federation); Popkov, A.S.; Krat, S.A.; Pisarev, A.A.; Vasina, Ya. A. [National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Kashirskoe highway 31, Moscow (Russian Federation); Lyublinski, I.E. [National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Kashirskoe highway 31, Moscow (Russian Federation); JSC “Red Star”, Electrolitniy proezd 1a, Moscow (Russian Federation); Vertkov, A.V. [JSC “Red Star”, Electrolitniy proezd 1a, Moscow (Russian Federation)

2017-04-15

Highlights: • The major part of deuterium desorbs from Li-D films in a very sharp peak at 670–710 K. • Exposure on air leads to intensive deuterium release from the Li-D film at room temperature. • Interaction with water vapor plays a major role in deuterium release from lithium films in the air. - Abstract: Deuterium release from Li-D films co-deposited on a Mo substrate at room temperature in magnetron discharge was investigated by means of thermal desorption spectroscopy. The deuterium concentration in the films was estimated to be D/Li = (14 ± 4)%. TDS from Li-D films just after co-deposition had a sharp peak at 670–710 K. Exposure of deposited Li-D films in the air at room temperature led to deuterium release. Comparison of release in air, water vapor, nitrogen, and oxygen demonstrated that water plays a major role in deuterium release in the air at low temperatures.

LET dependence of GafChromic films and an ion chamber in low-energy proton dosimetry

International Nuclear Information System (INIS)

Kirby, Daniel; Parker, David; Green, Stuart; Hugtenburg, Richard; Wojnecki, Cecile; Palmans, Hugo

2010-01-01

Dosimetry using a PMMA phantom was performed in 15 and 29 MeV proton beams from the Birmingham cyclotron, with a Markus parallel-plate ionization chamber and GafChromic EBT and MD-V2-55 film. Simulations of the depth-dose curves were performed with FLUKA 2008.3 and MCNPX 2.5.0, which agreed almost perfectly with each other in range and only differed by 2% in the Bragg peak (BP) region. FLUKA was also used to calculate k Q factors for Markus chamber measurements as an improvement to the IAEA TRS-398 values in low-energy beams. FLUKA depth-dose simulations overestimate the BP height measured by ion chamber by about 10%, where the initial proton energy spread was estimated by fitting to the slope of the measured BP distal edge. Both GafChromic films showed an under-response in the BP compared to ion chamber; however, EBT exhibits this effect at lower energies than MD-V2-55. A possible reason for this is attributed to the shape and arrangement of the monomer particles being different in the active components of EBT and MD-V2-55. Relative effectiveness (RE) of both films is presented as functions of residual range R res in water and peak proton energy determined by FLUKA, with considerations for the spatial separation of the two active layers in each film. The proton energies at which RE reduces to 90% of maximum film response are 6.7 and 3.2 MeV for MD-V2-55 and EBT, respectively. Additionally, a beam quality correction factor (g Q,Q 0 ) is suggested for both GafChromic films, involving water-to-film stopping power ratios evaluated using ICRU recommendations, and a polymer yield factor G Q 0 /G Q . RE in this work is equated to the reciprocal of the polymer yield factor. The calculated values of (s w,film ) Q /(s w,film ) Q 0 are constant within 2.1% and 1.2% across the proton energy range of 1-300 MeV for EBT and MD-V2-55, respectively, so it is concluded that the polymer yield factor is the dominant factor causing the LET quenching effect.

Sub-Micrometer Zeolite Films on Gold-Coated Silicon Wafers with Single-Crystal-Like Dielectric Constant and Elastic Modulus

Energy Technology Data Exchange (ETDEWEB)

Tiriolo, Raffaele [Department of Medical and Surgical Sciences, University Magna Graecia of Catanzaro, Viale Europa 88100 Catanzaro Italy; Rangnekar, Neel [Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Ave SE Minneapolis MN 55455 USA; Zhang, Han [Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Ave SE Minneapolis MN 55455 USA; Shete, Meera [Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Ave SE Minneapolis MN 55455 USA; Bai, Peng [Department of Chemistry and Chemistry Theory Center, University of Minnesota, 207 Pleasant St SE Minneapolis MN 55455 USA; Nelson, John [Characterization Facility, University of Minnesota, 12 Shepherd Labs, 100 Union St. S.E. Minneapolis MN 55455 USA; Karapetrova, Evguenia [Surface Scattering and Microdiffraction, X-ray Science Division, Argonne National Laboratory, 9700 S. Cass Ave, Building 438-D002 Argonne IL 60439 USA; Macosko, Christopher W. [Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Ave SE Minneapolis MN 55455 USA; Siepmann, Joern Ilja [Department of Chemistry and Chemistry Theory Center, University of Minnesota, 207 Pleasant St SE Minneapolis MN 55455 USA; Lamanna, Ernesto [Department of Health Sciences, University Magna Graecia of Catanzaro, Viale Europa 88100 Catanzaro Italy; Lavano, Angelo [Department of Medical and Surgical Sciences, University Magna Graecia of Catanzaro, Viale Europa 88100 Catanzaro Italy; Tsapatsis, Michael [Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Ave SE Minneapolis MN 55455 USA

2017-05-08

A low-temperature synthesis coupled with mild activation produces zeolite films exhibiting low dielectric constant (low-k) matching the theoretically predicted and experimentally measured values for single crystals. This synthesis and activation method allows for the fabrication of a device consisting of a b-oriented film of the pure-silica zeolite MFI (silicalite-1) supported on a gold-coated silicon wafer. The zeolite seeds are assembled by a manual assembly process and subjected to optimized secondary growth conditions that do not cause corrosion of the gold underlayer, while strongly promoting in-plane growth. The traditional calcination process is replaced with a non-thermal photochemical activation to ensure preservation of an intact gold layer. The dielectric constant (k), obtained through measurement of electrical capacitance in a metal-insulator-metal configuration, highlights the ultralow k approximate to 1.7 of the synthetized films, which is among the lowest values reported for an MFI film. There is large improvement in elastic modulus of the film (E approximate to 54 GPa) over previous reports, potentially allowing for integration into silicon wafer processing technology.

Structure and properties of low-n mesoporous silica films for optical applications

International Nuclear Information System (INIS)

Konjhodzic, Denan; Bretinger, Helmut; Marlow, Frank

2006-01-01

The properties and structure of the mesoporous silica films synthesized by dip-coating in evaporation-induced self-assembly are investigated. The nonionic triblock copolymer EO 2 PO 7 EO 2 has been used as a template in this modified sol-gel process. A strong dependence of the formed structure on the processing conditions, especially humidity, has been revealed allowing an appreciable structure tuning. Low humidity allows the reproducible synthesis of low refractive index films, which were used as optical waveguide supports. They are crack-free, transparent, thermally stable, very smooth, and have a thickness up to 1 μm. Under higher humidity conditions a novel sustained lamellar structure was synthesized, that remains stable upon calcination. The films were characterized by angle-dependent interferometry, small angle X-ray scattering (SAXS), transmission electron microscopy (TEM) and atomic force microscopy (AFM). 2D photonic crystals made of different materials, such as polymers can be deposited onto these films

Comparison of computerized digital and film-screen radiography: response to variation in imaging kVp

Energy Technology Data Exchange (ETDEWEB)

Broderick, N J; Long, B; Dreesen, R G; Cohen, M D; Cory, D A [Riley Hospital for Children, Indiana Univ. School of Medicine, Indianapolis, IN (United States). Dept. of Radiology; Katz, B P; Kalasinski, L A [Regenstreif Inst., Indiana Univ. School of Medicine, Indianapolis, IN (United States). Dept. of Medicine

1992-09-01

A controlled prospective study, in an animal model chosen to simulate portable neonatal radiography, was performed to compare the response of the Philips Computed Radiography (CR) system and conventional 200 speed film-screen (FS) to variation in imaging kVp. Acceptable images were obtained on the CR system over a very wide kVp range. In contrast the FS system produced acceptable images over a narrow kVp range. This ability suggests that the CR system should eliminate the need for repeat examinations in cases where a suboptimal kVp setting would have resulted in an unacceptable FS image. CR technology should therefore be ideally suited to portable radiography especially in situations where selection of correct exposure factors is difficult as in the neonatal nursery. (orig.).

Comparison of computerized digital and film-screen radiography: response to variation in imaging kVp

International Nuclear Information System (INIS)

Broderick, N.J.; Long, B.; Dreesen, R.G.; Cohen, M.D.; Cory, D.A.; Katz, B.P.; Kalasinski, L.A.

1992-01-01

A controlled prospective study, in an animal model chosen to simulate portable neonatal radiography, was performed to compare the response of the Philips Computed Radiography (CR) system and conventional 200 speed film-screen (FS) to variation in imaging kVp. Acceptable images were obtained on the CR system over a very wide kVp range. In contrast the FS system produced acceptable images over a narrow kVp range. This ability suggests that the CR system should eliminate the need for repeat examinations in cases where a suboptimal kVp setting would have resulted in an unacceptable FS image. CR technology should therefore be ideally suited to portable radiography especially in situations where selection of correct exposure factors is difficult as in the neonatal nursery. (orig.)

Alloying behaviour of electroplated Ag film with its underlying Pd/Ti film stack for low resistivity interconnect metallization

International Nuclear Information System (INIS)

Ezawa, Hirokazu; Miyata, Masahiro; Tatsumi, Kohei

2014-01-01

Highlights: • Alloying behavior of Ag/Pd/Ti film stack was studied by annealing at 400-800 °C. • The Ag film resistivity decreased with increasing annealing temperature. • Formation of the Pd-Ti intermetallics was found to be dominant over Ag-Pd alloying. • The excess Ti was consumed to form Ti oxides, which inhibited Ti alloying with Ag. -- Abstract: In this paper, viability of electroplated Ag film into device application was studied. Alloying behavior of the Ag film with its underlying Pd(50 nm)/Ti(100 nm) film stack was investigated with respect to heat treatment at different temperatures from 400 °C to 800 °C in an argon ambient. After annealing at 400 °C, the electrical resistivity of the Ag film increased due to Pd alloying with Ag. Formation of Pd–Ti intermetallic phases became dominant over Ag–Pd alloying with increasing annealing temperature, leading to the resistivity decrease of the Ag film. The resistivity of the 800 °C annealed Ag film approached that of its as-plated Ag film. The excess Ti atoms which were not consumed to form the intermetallic phases with the Pd atoms migrated to the Ag film surface to form Ti oxides along the Ag grain boundaries on the topmost film surface. The Ag/Pd/Ti film stack has been confirmed to maintain the resistivity of the Ag film at as-plated low levels after high temperature annealing. This paper also discusses process integration issues to enable the Ag metallization process for future scaled and three dimensionally chip stacked devices

Tuning the antiferromagnetic to ferromagnetic phase transition in FeRh thin films by means of low-energy/low fluence ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Heidarian, A.; Bali, R.; Grenzer, J.; Wilhelm, R.A.; Heller, R.; Yildirim, O.; Lindner, J.; Potzger, K.

2015-09-01

Ion irradiation induced modifications of the thermomagnetic properties of equiatomic FeRh thin films have been investigated. The application of 20 keV Ne{sup +} ions at different fluencies leads to broadening of the antiferromagnetic to ferromagnetic phase transition as well as a shift of the transition temperature towards lower temperatures with increasing ion fluence. Moreover, the ferromagnetic background at low temperatures generated by the ion irradiation leads to pronounced saturation magnetisation at 5 K. Complete erasure of the transition, i.e. ferromagnetic ordering through the whole temperature regime was achieved at a Ne{sup +} fluence of 3 × 10{sup 14} ions/cm{sup 2}. It does not coincide with the complete randomization of the chemical ordering of the crystal lattice.

Improved current transport properties of post annealed Y1Ba2Cu3O7-x thin films using Ag doping

DEFF Research Database (Denmark)

Clausen, Thomas; Skov, Johannes; Jacobsen, Claus Schelde

1996-01-01

The influence of Ag doping on the transport properties of Y1Ba2Cu3O7–x thin films prepared by Y, BaF2, and Cu co-evaporation and optimized ex situ post annealing has been investigated. Both undoped and Ag doped films have values of Tc above 90 K, but Jc (77 K) is highly dependent on the nominal...... thickness (tnom) of the as-deposited film. For undoped films with tnom>106 A/cm2) decreases monotonically with increasing film thickness. Above 300 nm Jc (77 K) decreases rapidly to values below 5×105 A/cm2. Ag doped films with tnom>=200 nm have higher Jc (77 K) values than those of undoped films. Ag doped...... films have a maximum in Jc (77 K) around 250 nm. As for the undoped films, there is a large decrease in Jc (77 K) for Ag doped films with tnom>=300 nm. It was found that the higher values of Jc (77 K) for the Ag doped films were due to a better epitaxial growth of the YBCO compound. The low values of Jc...

Photoluminescence properties of ZnO films grown on InP by thermally oxidizing metallic Zn films

CERN Document Server

Chen, S J; Zhang, J Y; Lu, Y M; Shen, D Z; Fan, X W

2003-01-01

Photoluminescence (PL) properties of ZnO films grown on (001) InP substrates by thermal oxidization of metallic Zn films, in which oxygen vacancies and interstitial Zn ions are compensated by P ions diffusing from (001) InP substrates, are investigated. X-ray diffraction spectra indicate that P ions have diffused into the Zn films and chemically combined with Zn ions to form Zn sub 3 P sub 2. Intense free exciton emission dominates the PL spectra of ZnO films with very weak deep-level emission. Low-temperature PL spectra at 79 K are dominated by neutral-donor bound exciton emission at 3.299 eV (I sub 4) with a linewidth of 17.3 meV and neutral-acceptor bound exciton emission at 3.264 eV. The free exciton emission increases with increasing temperature and eventually dominates the emission spectrum for temperature higher than 170 K. Furthermore, the visible emission around 2.3 eV correlated with oxygen deficiencies and interstitial Zn defects was quenched to a remarkable degree by P diffusing from InP substrate...

Photoluminescence properties of ZnO films grown on InP by thermally oxidizing metallic Zn films

International Nuclear Information System (INIS)

Chen, S J; Liu, Y C; Zhang, J Y; Lu, Y M; Shen, D Z; Fan, X W

2003-01-01

Photoluminescence (PL) properties of ZnO films grown on (001) InP substrates by thermal oxidization of metallic Zn films, in which oxygen vacancies and interstitial Zn ions are compensated by P ions diffusing from (001) InP substrates, are investigated. X-ray diffraction spectra indicate that P ions have diffused into the Zn films and chemically combined with Zn ions to form Zn 3 P 2 . Intense free exciton emission dominates the PL spectra of ZnO films with very weak deep-level emission. Low-temperature PL spectra at 79 K are dominated by neutral-donor bound exciton emission at 3.299 eV (I 4 ) with a linewidth of 17.3 meV and neutral-acceptor bound exciton emission at 3.264 eV. The free exciton emission increases with increasing temperature and eventually dominates the emission spectrum for temperature higher than 170 K. Furthermore, the visible emission around 2.3 eV correlated with oxygen deficiencies and interstitial Zn defects was quenched to a remarkable degree by P diffusing from InP substrates

Low temperature-pyrosol-deposition of aluminum-doped zinc oxide thin films for transparent conducting contacts

Energy Technology Data Exchange (ETDEWEB)

Rivera, M.J. [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Apartado Postal 70-360, Coyoacán, 04510 México, D.F. (Mexico); Ramírez, E.B. [Universidad Autónoma de la Ciudad de México, Calle Prolongación San Isidro Núm. 151, Col. San Lorenzo Tezonco, Iztapalapa, 09790 México, D.F. (Mexico); Juárez, B.; González, J.; García-León, J.M. [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Apartado Postal 70-360, Coyoacán, 04510 México, D.F. (Mexico); Escobar-Alarcón, L. [Departamento de Física, Instituto Nacional de Investigaciones Nucleares, Apdo. Postal 18-1027, México, D.F. 11801 (Mexico); Alonso, J.C., E-mail: alonso@unam.mx [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Apartado Postal 70-360, Coyoacán, 04510 México, D.F. (Mexico)

2016-04-30

Aluminum doped-zinc oxide (ZnO:Al) thin films with thickness ~ 1000 nm have been deposited by the ultrasonic spray pyrolysis technique using low substrate temperatures in the range from 285 to 360 °C. The electrical and optical properties of the ZnO:Al (AZO) films were investigated by Uv–vis spectroscopy and Hall effect measurements. The crystallinity and morphology of the films were analyzed using X-ray diffraction (XRD), atomic force microscopy (AFM), and high resolution scanning electron microcopy (SEM). XRD results reveal that all the films are nanocrystalline with a hexagonal wurtzite structure with a preferential orientation in the (002) plane. The size of the grains calculated from Scherrer's formula was in the range from 28 to 35 nm. AFM and SEM analysis reveals that the grains form round and hexagonal shaped aggregates at high deposition temperatures and larger rice shaped aggregates at low temperatures. All the films have a high optical transparency (~ 82%). According to the Hall measurements the AZO films deposited at 360 and 340 °C had resistivities of 2.2 × 10{sup −3}–4.3 × 10{sup −3} Ω cm, respectively. These films were n-type and had carrier concentrations and mobilities of 3.71–2.54 × 10{sup 20} cm{sup −3} and 7.4–5.7 cm{sup 2}/V s, respectively. The figure of merit of these films as transparent conductors was in the range of 2.6 × 10{sup −2} Ω{sup −1}–4.1 × 10{sup −2} Ω{sup −1}. Films deposited at 300 °C and 285 °C, had much higher resistivities. Based on the thermogravimetric analysis of the individual precursors used for film deposition, we speculate on possible film growing mechanisms that can explain the composition and electrical properties of films deposited under the two different ranges of temperatures. - Highlights: • Aluminum doped zinc oxide thin films were deposited at low temperatures by pyrosol. • Low resistivity was achieved from 340 °C substrate temperature. • All films deposited

Solution-processable precursor route for fabricating ultrathin silica film for high performance and low voltage organic transistors

Institute of Scientific and Technical Information of China (English)

Shujing Guo; Liqiang Li; Zhongwu Wang; Zeyang Xu; Shuguang Wang; Kunjie Wu; Shufeng Chen; Zongbo Zhang; Caihong Xu; Wenfeng Qiu

2017-01-01

Silica is one of the most commonly used materials for dielectric layer in organic thin-film transistors due to its excellent stability,excellent electrical properties,mature preparation process,and good compatibility with organic semiconductors.However,most of conventional preparation methods for silica film are generally performed at high temperature and/or high vacuum.In this paper,we introduce a simple solution spin-coating method to fabricate silica thin film from precursor route,which possesses a low leakage current,high capacitance,and low surface roughness.The silica thin film can be produced in the condition of low temperature and atmospheric environment.To meet various demands,the thickness of film can be adjusted by means of preparation conditions such as the speed of spin-coating and the concentration of solution.The p-type and n-type organic field effect transistors fabricated by using this film as gate electrodes exhibit excellent electrical performance including low voltage and high performance.This method shows great potential for industrialization owing to its characteristic of low consumption and energy saving,time-saving and easy to operate.

Preparation, Crystallization and X-ray Diffraction Analysis to 1.5 A Resolution of Rat Cysteine Dioxygenase, a Mononuclear Iron Enzyme Responsible for Cysteine Thiol Oxidation

Energy Technology Data Exchange (ETDEWEB)

Simmons,C.; Hao, Q.; Stipanuk, M.

2005-01-01

Cysteine dioxygenase (CDO; EC 1.13.11.20) is an {approx}23 kDa non-heme iron metalloenzyme that is responsible for the oxidation of cysteine by O2, yielding cysteinesulfinate. CDO catalyzes the first step in the conversion of cysteine to taurine, as well as the first step in the catabolism of cysteine to pyruvate plus sulfate. Recombinant rat CDO was heterologously expressed, purified and crystallized. The protein was expressed as a fusion protein bearing a polyhistidine tag to facilitate purification, a thioredoxin tag to improve solubility and a factor Xa cleavage site to permit removal of the entire N-terminus, leaving only the 200 amino acids inherent to the native protein. A multi-step purification scheme was used to achieve >95% purity of CDO. The optimal CDO crystals diffracted to 1.5 Angstroms resolution and belonged to space group P4{sub 3}2{sub 1}2 or P4{sub 1}2{sub 1}2, with unit-cell parameters a = b = 57.55, c = 123.06 Angstrom, {alpha} = {beta} = {gamma} = 90. CDO shows little homology to any other proteins; therefore, the structure of the enzyme will be determined by ab initio phasing using a selenomethionyl derivative.

Low-temperature sputtering of crystalline TiO2 films

International Nuclear Information System (INIS)

Musil, J.; Herman, D.; Sicha, J.

2006-01-01

This article reports on the investigation of reactive magnetron sputtering of transparent, crystalline titanium dioxide films. The aim of this investigation is to determine a minimum substrate surface temperature T surf necessary to form crystalline TiO 2 films with anatase structure. Films were prepared by dc pulsed reactive magnetron sputtering using a dual magnetron operating in bipolar mode and equipped with Ti(99.5) and ceramic Ti 5 O 9 targets. The films were deposited on unheated glass substrates and their structure was characterized by x-ray diffraction and surface morphology by atomic force microscopy. Special attention is devoted to the measurement of T surf using thermostrips pasted to the glass substrate. It was found that (1) T surf is considerably higher (approximately by 100 deg. C or more) than the substrate temperature T s measured by the thermocouple incorporated into the substrate holder and (2) T surf strongly depends on the substrate-to-target distance d s-t , the magnetron target power loading, and the thermal conductivity of the target and its cooling. The main result of this study is the finding that (1) the crystallization of sputtered TiO 2 films depends not only on T surf but also on the total pressure p T of sputtering gas (Ar+O 2 ), partial pressure of oxygen p O 2 , the film deposition rate a D , and the film thickness h (2) crystalline TiO 2 films with well developed anatase structure can be formed at T surf =160 deg. C and low values of a D ≅5 nm/min (3) the crystalline structure of TiO 2 film gradually changes from (i) anatase through (ii) anatase+rutile mixture, and (iii) pure rutile to x-ray amorphous structure at T surf =160 deg. C and p T =0.75 Pa when p O 2 decreases and a D increases above 5 nm/min, and (4) crystallinity of the TiO 2 films decreases with decreasing h and T surf . Interrelationships between the structure of TiO 2 film, its roughness, T surf , and a D are discussed in detail. Trends of next development are

Low-Temperature Bonding of Bi0.5Sb1.5Te3 Thermoelectric Material with Cu Electrodes Using a Thin-Film In Interlayer

Science.gov (United States)

Lin, Yan-Cheng; Yang, Chung-Lin; Huang, Jing-Yi; Jain, Chao-Chi; Hwang, Jen-Dong; Chu, Hsu-Shen; Chen, Sheng-Chi; Chuang, Tung-Han

2016-09-01

A Bi0.5Sb1.5Te3 thermoelectric material electroplated with a Ni barrier layer and a Ag reaction layer was bonded with a Ag-coated Cu electrode at low temperatures of 448 K (175 °C) to 523 K (250 °C) using a 4- μm-thick In interlayer under an external pressure of 3 MPa. During the bonding process, the In thin film reacted with the Ag layer to form a double layer of Ag3In and Ag2In intermetallic compounds. No reaction occurred at the Bi0.5Sb1.5Te3/Ni interface, which resulted in low bonding strengths of about 3.2 MPa. The adhesion of the Bi0.5Sb1.5Te3/Ni interface was improved by precoating a 1- μm Sn film on the surface of the thermoelectric element and preheating it at 523 K (250 °C) for 3 minutes. In this case, the bonding strengths increased to a range of 9.1 to 11.5 MPa after bonding at 473 K (200 °C) for 5 to 60 minutes, and the shear-tested specimens fractured with cleavage characteristics in the interior of the thermoelectric material. The bonding at 448 K (175 °C) led to shear strengths ranging from 7.1 to 8.5 MPa for various bonding times between 5 and 60 minutes, which were further increased to the values of 10.4 to 11.7 MPa by increasing the bonding pressure to 9.8 MPa. The shear strengths of Bi0.5Sb1.5Te3/Cu joints bonded with the optimized conditions of the modified solid-liquid interdiffusion bonding process changed only slightly after long-term exposure at 473 K (200 °C) for 1000 hours.

Colloidal CuInSe2 nanocrystals thin films of low surface roughness

International Nuclear Information System (INIS)

Kergommeaux, Antoine de; Fiore, Angela; Faure-Vincent, Jérôme; Pron, Adam; Reiss, Peter

2013-01-01

Thin-film processing of colloidal semiconductor nanocrystals (NCs) is a prerequisite for their use in (opto-)electronic devices. The commonly used spin-coating is highly materials consuming as the overwhelming amount of deposited matter is ejected from the substrate during the spinning process. Also, the well-known dip-coating and drop-casting procedures present disadvantages in terms of the surface roughness and control of the film thickness. We show that the doctor blade technique is an efficient method for preparing nanocrystal films of controlled thickness and low surface roughness. In particular, by optimizing the deposition conditions, smooth and pinhole-free films of 11 nm CuInSe 2 NCs have been obtained exhibiting a surface roughness of 13 nm root mean square (rms) for a 350 nm thick film, and less than 4 nm rms for a 75 nm thick film. (paper)

Lanthanum gallate substrates for epitaxial high-temperature superconducting thin films

International Nuclear Information System (INIS)

Sandstrom, R.L.; Giess, E.A.; Gallagher, W.J.; Segmueller, A.; Cooper, E.I.; Chisholm, M.F.; Gupta, A.; Shinde, S.; Laibowitz, R.B.

1988-01-01

We demonstrate that lanthanum gallate (LaGaO 3 ) has considerable potential as an electronic substrate material for high-temperature superconducting films. It provides a good lattice and thermal expansion match to YBa 2 Cu 3 O/sub 7-//sub x/, can be grown in large crystal sizes, is compatible with high-temperature film processing, and has a reasonably low dielectric constant (ε≅25) and low dielectric losses. Epitaxial YBa 2 Cu 3 O/sub 7-//sub x/ films grown on LaGaO 3 single-crystal substrates by three techniques have zero resistance between 87 and 91 K

The influence of film-screen color sensitivity and type of measurement device on kVp measurements.

Science.gov (United States)

Lam, R W; Price, S C

1989-01-01

Three methods for evaluating radiographic kVp were studied: the Wisconsin Test Cassette, the Noninvasive Evaluator of Radiation Outputs (NERO), and the Dynalyzer. The Dynalyzer kVp readings were the highest and were followed by NERO and cassette readings in descending order. By film type, the cassette readings ranged from Kodak OG (green sensitive), TMG (green sensitive), XK (blue sensitive), and XRP (blue sensitive) in descending order. The results show that there is significant variation between the methods.

Absence of low temperature phase transitions and enhancement of ferroelectric transition temperature in highly strained BaTiO{sub 3} epitaxial films grown on MgO Substrates

Energy Technology Data Exchange (ETDEWEB)

Kumar, Satish; Kumar, Dhirendra; Sathe, V. G., E-mail: vasant@csr.res.in [UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452001 (India); Kumar, Ravi; Sharma, T. K. [Semiconductor Physics and Devices Lab, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India)

2015-04-07

Recently, a large enhancement in the ferroelectric transition temperature of several oxides is reported by growing the respective thin films on appropriate substrates. This phenomenon is correlated with high residual strain in thin films often leading to large increase in the tetragonality of their crystal structure. However, such an enhancement of transition temperature is usually limited to very thin films of ∼10 nm thickness. Here, we report growth of fully strained epitaxial thin films of BaTiO{sub 3} of 400 nm thickness, which are coherently grown on MgO substrates by pulsed laser deposition technique. Conventional high resolution x-ray diffraction and also the reciprocal space map measurements confirm that the film is fully strained with in-plane tensile strain of 5.5% that dramatically increases the tetragonality to 1.05. Raman measurements reveal that the tetragonal to cubic structural phase transition is observed at 583 K, which results in an enhancement of ∼200 K. Furthermore, temperature dependent Raman studies on these films corroborate absence of all the low temperature phase transitions. Numerical calculations based on thermodynamical model predict a value of the transition temperature that is greater than 1500 °C. Our experimental results are therefore in clear deviation from the existing strain dependent phase diagrams.

A methodology for the preparation of nanoporous polyimide films with low dielectric constants

International Nuclear Information System (INIS)

Jiang Lizhong; Liu Jiugui; Wu Dezhen; Li Hangquan; Jin Riguang

2006-01-01

A method to generate nanoporous polyimide films with low dielectric constants was proposed. The preparation consisted of two steps. Firstly, a polyimide/silica hybrid film was prepared via sol-gel process. Secondly, the hybrid film was treated with hydrofluoric acid to remove the dispersed silica particles, leaving pores with diameters between 20 and 120 nm, depending on the size of silica particles. Both hybrid and porous films were subjected to a variety of characterizations including transmission electron microscopy observation, dielectric constant measurement and tensile strength measurement

Urea-assisted low temperature green synthesis of graphene nanosheets for transparent conducting film

Science.gov (United States)

Chamoli, Pankaj; Das, Malay K.; Kar, Kamal K.

2018-02-01

Present work demonstrates the fabrication of graphene nanosheet (GN) based transparent conducting film (TCF) using spray coating. Green synthesis of GN is carried out by reduction of graphene oxide (GO) using urea as green reducing agent. The reductive ability of urea with varied concentration is studied for GO at low temperature (i.e., 90 °C). As synthesized graphene nanosheets (GNs) are characterized by Raman spectroscopy, Fourier transform infrared spectroscopy (FTIR), X-ray diffraction (XRD), UV-visible spectroscopy, field emission scanning electron microscopy (FESEM), atomic force microscope (AFM), and X-ray Photon spectroscopy (XPS). Raman analysis confirms that the maximum reduction of oxygen species is noticed using 30 mg/ml urea concentration at 90 °C from GO, and found Raman D to G band ratio (ID/IG) of ∼1.30. XPS analysis validates the Raman signature of removal of oxygen functional groups from GO, and obtained C/O ratio of ∼5.28. Further, transparent conducting films (TCFs) are fabricated using synthesized GNs. Thermal graphitization is carried out to enhance the optical and electrical properties of TCFs. TCF shows best performance when it is annealed at 900 °C for 1 h in vacuum, and obtained sheet resistance is ∼1.89 kΩ/□ with transmittance of ∼62.53%.

Growth, morphology, and conductivity in semimetallic/metallic films on Si(001)

Energy Technology Data Exchange (ETDEWEB)

Jnawali, Giriraj

2009-06-09

This dissertation deals with the study of epitaxial growth of semimetallic (Bi) and metallic (Ag) films on Si(001) as well as in situ electrical transport study of those films via surface manipulation. The focus of the transport measurements is to study the influence of the surface morphology or structure on the resistance of the film. In spite of the large lattice mismatch and different lattice geometry, it is possible to grow epitaxial Bi(111) films on Si(001) substrates, which are surprisingly smooth, relaxed and almost free of defects. Due to the two-fold symmetry of the substrates, the Bi(111) film is composed of crystallites rotated by 90 with respect to each other. Annealing of 6 nm film from 150 K to 450 K enables the formation of a periodic interfacial misfit dislocations, which accommodates a remaining lattice mismatch of 2.3 %. The surface/interface roughness and the bulk defect density of the film found to be extremely low, indicating the high crystalline quality of the film with atomically smooth surface and abrupt interface. Similar to the Bi films, Ag grows in a (111) orientation on Si(001) with two 90 rotated domains. The remaining strain of 2.2 % (tensile) is accommodated by the formation of an ordered network of dislocations. The Ag film exhibits atomically smooth surface. Those Bi films and Ag films were used as model systems to study the influence of the surface morphology on the electrical resistance. Surprisingly, all the Bi films (3-170 nm thicknesses) have shown an anomalous behavior of conductance with temperature and thickness. As in the case of doped semiconductor, the conductance increases exponentially from 150 K to 300 K and saturates at 350 K before finally decreasing with temperature. In situ measurements of the resistance during additional Bi deposition on the smooth Bi(111) films exhibit a square root dependent with coverage after a linear increase at very low coverage (1 % of a BL). During additional deposition of Bi, carriers are

Low resistance polycrystalline diamond thin films deposited by hot ...

Indian Academy of Sciences (India)

Administrator

silicon wafers using a hydrocarbon gas (CH4) highly diluted with H2 at low pressure in a hot filament chemi- cal vapour ... the laser spot was focused on the sample surface using a ... tative spectra of diamond thin films with a typical dia-.

Aluminum oxide films deposited in low pressure conditions by reactive pulsed dc magnetron sputtering

CERN Document Server

Seino, T

2002-01-01

The reactive pulsed dc sputtering technique is widely used for the deposition of oxide films. The operating pressure for sputtering is commonly above 0.13 Pa. In this study, however, aluminum oxide (alumina) films were deposited at operating pressures from 0.06 to 0.4 Pa using a sputtering system equipped with a scanning magnetron cathode and a pulsed dc power supply. The pulsed dc power was found to be useful not only to reduce arcing, but also to sustain the discharge at low pressure. The electrical breakdown field, intrinsic stress, O/Al ratio, refractive index, and surface roughness were investigated. Both a low intrinsic stress and an O/Al ratio around the stoichiometry were required to get the film having a high breakdown field. A low operating pressure of 0.1 Pa was found to provide the necessary stress and O/Al ratio targets. A 50-nm-thick alumina film having a maximum breakdown field of 7.4 MV/cm was obtained.

A K Tyagi

Indian Academy of Sciences (India)

Home; Journals; Bulletin of Materials Science. A K Tyagi. Articles written in Bulletin of Materials Science. Volume 25 Issue 2 April 2002 pp 163-168 Thin Films. Carbonaceous alumina films deposited by MOCVD from aluminium acetylacetonate: a spectroscopic ellipsometry study · M P Singh G Raghavan A K Tyagi S A ...

Low-Dimensional Nanomaterials as Active Layer Components in Thin-Film Photovoltaics

Science.gov (United States)

Shastry, Tejas Attreya

Thin-film photovoltaics offer the promise of cost-effective and scalable solar energy conversion, particularly for applications of semi-transparent solar cells where the poor absorption of commercially-available silicon is inadequate. Applications ranging from roof coatings that capture solar energy to semi-transparent windows that harvest the immense amount of incident sunlight on buildings could be realized with efficient and stable thin-film solar cells. However, the lifetime and efficiency of thin-film solar cells continue to trail their inorganic silicon counterparts. Low-dimensional nanomaterials, such as carbon nanotubes and two-dimensional metal dichalcogenides, have recently been explored as materials in thin-film solar cells due to their exceptional optoelectronic properties, solution-processability, and chemical inertness. Thus far, issues with the processing of these materials has held back their implementation in efficient photovoltaics. This dissertation reports processing advances that enable demonstrations of low-dimensional nanomaterials in thin-film solar cells. These low-dimensional photovoltaics show enhanced photovoltaic efficiency and environmental stability in comparison to previous devices, with a focus on semiconducting single-walled carbon nanotubes as an active layer component. The introduction summarizes recent advances in the processing of carbon nanotubes and their implementation through the thin-film photovoltaic architecture, as well as the use of two-dimensional metal dichalcogenides in photovoltaic applications and potential future directions for all-nanomaterial solar cells. The following chapter reports a study of the interaction between carbon nanotubes and surfactants that enables them to be sorted by electronic type via density gradient ultracentrifugation. These insights are utilized to construct of a broad distribution of carbon nanotubes that absorb throughout the solar spectrum. This polychiral distribution is then shown

Radiation from silver films bombarded by low-energy electrons

International Nuclear Information System (INIS)

Chung, M.S.; Callcott, T.A.; Kretschmann, E.; Arakawa, E.T.

1980-01-01

Emission spectra from Ag films irradiated by low energy electrons (20-1500 eV) have been measured, and the results compared with theory. For relatively smooth films, two peaks in the spectra are resolved. One at 3.73 eV, the volume plasmon energy, is attributed to transition radiation and/or bremsstrahlung. The second, at about 3.60 eV, is very sensitive to surface roughness in both position and magnitude and is produced by roughness-coupled radiation from surface plasmons. For rough films, the roughness-coupled radiation dominates the emission. In addition to spectral shapes, the polarization of the radiation and its intensity as a function of electron energy were measured. The experimental results are compared with new calculations of roughness-coupled emission which account for most of our observations. They indicate that high wavevector roughness components play the dominant role in the emission process. (orig.)

Pentacene-Based Thin Film Transistor with Inkjet-Printed Nanocomposite High-K Dielectrics

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Chao-Te Liu

2012-01-01

Full Text Available The nanocomposite gate insulating film of a pentacene-based thin film transistor was deposited by inkjet printing. In this study, utilizing the pearl miller to crumble the agglomerations and the dispersant to well stabilize the dispersion of nano-TiO2 particles in the polymer matrix of the ink increases the dose concentration for pico-jetting, which could be as the gate dielectric film made by inkjet printing without the photography process. Finally, we realized top contact pentacene-TFTs and successfully accomplished the purpose of directly patternability and increase the performance of the device based on the nanocomposite by inkjet printing. These devices exhibited p-channel TFT characteristics with a high field-effect mobility (a saturation mobility of ̃0.58 cm2 V−1 s−1, a large current ratio (>103 and a low operation voltage (<6 V. Furthermore, we accorded the deposited mechanisms which caused the interface difference between of inkjet printing and spin coating. And we used XRD, SEM, Raman spectroscopy to help us analyze the transfer characteristics of pentacene films and the performance of OTFTs.

Large piezoelectric strain with ultra-low strain hysteresis in highly c-axis oriented Pb(Zr0.52Ti0.48)O3 films with columnar growth on amorphous glass substrates.

Science.gov (United States)

Nguyen, Minh D; Houwman, Evert P; Rijnders, Guus

2017-10-10

Thin films of PbZr 0 . 52 Ti 0 . 48 O 3 (PZT) with largely detached columnar grains, deposited by pulsed laser deposition (PLD) on amorphous glass substrates covered with Ca 2 Nb 3 O 10 nanosheets as growth template and using LaNiO 3 electrode layers, are shown to exhibit very high unipolar piezoelectric strain and ultra-low strain hysteresis. The observed increase of the piezoelectric coefficient with increasing film thickness is attributed to the reduction of clamping, because of the increasingly less dense columnar microstructure (more separation between the grains) with across the film thickness. A very large piezoelectric coefficient (490 pm/V) and a high piezoelectric strain (~0.9%) are obtained in 4-µm-thick film under an applied electric field of 200 kV/cm, which is several times larger than in usual PZT ceramics. Further very low strain hysteresis (H≈2-4%) is observed in 4 to 5 µm thick films. These belong to the best values demonstrated so far in piezoelectric films. Fatigue testing shows that the piezoelectric properties are stable up to 10 10 cycles. The growth of high quality PZT films with very large strain and piezoelectric coefficients, very low hysteresis and with long-term stability on a technologically important substrate as glass is of great significance for the development of practical piezo driven microelectromechanical actuator systems.

X-ray diffraction stress analysis of ferroelectric thin films with ideal (h k l) textures considering the piezoelectric coupling effect

International Nuclear Information System (INIS)

Wu Huaping; Wu Linzhi; Li Jiquan; Chai Guozhong; Du Shanyi

2010-01-01

Ferroelectric thin films present large residual stress and strong texture during preparation, which affect the mechanical, dielectric and piezoelectric properties of the thin films. The determination of residual stresses in ferroelectric thin films with different textures is therefore very important. In this paper, an extended crystallite group model to evaluate the residual stresses of ferroelectric thin films using X-ray diffraction is proposed by considering the constitutive equation of orthogonally anisotropic ferroelectric medium. The effects of anisotropy and piezoelectric coupling on residual stresses of ferroelectric thin films are analyzed. X-ray stress factors for ideal (h k l)-textured ferroelectric thin films are obtained. An example of calculating the residual stresses of tetragonal perovskite ferroelectric thin films with (1 1 1) and (1 0 0) textures using the extended model is provided to validate the model.

Relaxation in Thin Polymer Films Mapped across the Film Thickness by Astigmatic Single-Molecule Imaging

KAUST Repository

Oba, Tatsuya

2012-06-19

We have studied relaxation processes in thin supported films of poly(methyl acrylate) at the temperature corresponding to 13 K above the glass transition by monitoring the reorientation of single perylenediimide molecules doped into the films. The axial position of the dye molecules across the thickness of the film was determined with a resolution of 12 nm by analyzing astigmatic fluorescence images. The average relaxation times of the rotating molecules do not depend on the overall thickness of the film between 20 and 110 nm. The relaxation times also do not show any dependence on the axial position within the films for the film thickness between 70 and 110 nm. In addition to the rotating molecules we observed a fraction of spatially diffusing molecules and completely immobile molecules. These molecules indicate the presence of thin (<5 nm) high-mobility surface layer and low-mobility layer at the interface with the substrate. (Figure presented) © 2012 American Chemical Society.

Preparation, crystallization and X-ray diffraction analysis to 1.5 Å resolution of rat cysteine dioxygenase, a mononuclear iron enzyme responsible for cysteine thiol oxidation

Energy Technology Data Exchange (ETDEWEB)

Simmons, Chad R. [Division of Nutritional Sciences, Cornell University, Ithaca, NY 14853-8001 (United States); Hao, Quan [MacCHESS at the Cornell High Energy Synchrotron Source, Cornell University, Ithaca, NY 14853-8001 (United States); Stipanuk, Martha H., E-mail: mhs6@cornell.edu [Division of Nutritional Sciences, Cornell University, Ithaca, NY 14853-8001 (United States)

2005-11-01

Recombinant rat cysteine dioxygenase (CDO) has been expressed, purified and crystallized and X-ray diffraction data have been collected to 1.5 Å resolution. Cysteine dioxygenase (CDO; EC 1.13.11.20) is an ∼23 kDa non-heme iron metalloenzyme that is responsible for the oxidation of cysteine by O{sub 2}, yielding cysteinesulfinate. CDO catalyzes the first step in the conversion of cysteine to taurine, as well as the first step in the catabolism of cysteine to pyruvate plus sulfate. Recombinant rat CDO was heterologously expressed, purified and crystallized. The protein was expressed as a fusion protein bearing a polyhistidine tag to facilitate purification, a thioredoxin tag to improve solubility and a factor Xa cleavage site to permit removal of the entire N-terminus, leaving only the 200 amino acids inherent to the native protein. A multi-step purification scheme was used to achieve >95% purity of CDO. The optimal CDO crystals diffracted to 1.5 Å resolution and belonged to space group P4{sub 3}2{sub 1}2 or P4{sub 1}2{sub 1}2, with unit-cell parameters a = b = 57.55, c = 123.06 Å, α = β = γ = 90°. CDO shows little homology to any other proteins; therefore, the structure of the enzyme will be determined by ab initio phasing using a selenomethionyl derivative.

Low-temperature enhancement of plasmonic performance in silver films

Czech Academy of Sciences Publication Activity Database

Jayanti, S.V.; Park, J.H.; Dejneka, Alexandr; Chvostová, Dagmar; McPeak, K.M.; Chen, X.; Oh, S.H.; Norris, D.J.

2015-01-01

Roč. 5, č. 5 (2015), 1147-1155 ISSN 2159-3930 R&D Projects: GA ČR(CZ) GA15-13853S Institutional support: RVO:68378271 Keywords : plasmonic performance * silver films * low temperature * spectroscopic ellipsometry Subject RIV: BH - Optics, Masers, Lasers Impact factor: 2.657, year: 2015

M K Jayaraj

Indian Academy of Sciences (India)

Home; Journals; Bulletin of Materials Science. M K Jayaraj. Articles written in Bulletin of Materials Science. Volume 25 Issue 3 June 2002 pp 227-230 Thin Films. Transparent conducting zinc oxide thin film prepared by off-axis rf magnetron sputtering · M K Jayaraj Aldrin Antony Manoj Ramachandran · More Details Abstract ...

Low-temperature growth of low friction wear-resistant amorphous carbon nitride thin films by mid-frequency, high power impulse, and direct current magnetron sputtering

International Nuclear Information System (INIS)

Bakoglidis, Konstantinos D.; Schmidt, Susann; Garbrecht, Magnus; Ivanov, Ivan G.; Jensen, Jens; Greczynski, Grzegorz; Hultman, Lars

2015-01-01

The potential of different magnetron sputtering techniques for the synthesis of low friction and wear resistant amorphous carbon nitride (a-CN x ) thin films onto temperature-sensitive AISI52100 bearing steel, but also Si(001) substrates was studied. Hence, a substrate temperature of 150 °C was chosen for the film synthesis. The a-CN x films were deposited using mid-frequency magnetron sputtering (MFMS) with an MF bias voltage, high power impulse magnetron sputtering (HiPIMS) with a synchronized HiPIMS bias voltage, and direct current magnetron sputtering (DCMS) with a DC bias voltage. The films were deposited using a N 2 /Ar flow ratio of 0.16 at the total pressure of 400 mPa. The negative bias voltage, V s , was varied from 20 to 120 V in each of the three deposition modes. The microstructure of the films was characterized by high-resolution transmission electron microscopy and selected area electron diffraction, while the film morphology was investigated by scanning electron microscopy. All films possessed an amorphous microstructure, while the film morphology changed with the bias voltage. Layers grown applying the lowest substrate bias of 20 V exhibited pronounced intercolumnar porosity, independent of the sputter technique. Voids closed and dense films are formed at V s  ≥ 60 V, V s  ≥ 100 V, and V s  = 120 V for MFMS, DCMS, and HiPIMS, respectively. X-ray photoelectron spectroscopy revealed that the nitrogen-to-carbon ratio, N/C, of the films ranged between 0.2 and 0.24. Elastic recoil detection analysis showed that Ar content varied between 0 and 0.8 at. % and increased as a function of V s for all deposition techniques. All films exhibited compressive residual stress, σ, which depends on the growth method; HiPIMS produces the least stressed films with values ranging between −0.4 and −1.2 GPa for all V s , while CN x films deposited by MFMS showed residual stresses up to −4.2 GPa. Nanoindentation showed a significant

Photoelectrochemical response and corrosion behavior of CdS/TiO2 nanocomposite films in an aerated 0.5 M NaCl solution

Science.gov (United States)

Boonserm, Aleena; Kruehong, Chaiyaput; Seithtanabutara, Varinrumpai; Artnaseaw, Apichart; Kwakhong, Panomkorn

2017-10-01

This research aimed to investigate the photoelectrochemical response and corrosion behavior of CdS/TiO2 nanocomposite films using electrochemical measurements in an aerated 0.5 M NaCl solution under white light illumination. The CdS/TiO2 nanocomposite films were prepared by chemical bath deposition technique in a solution of cadmium and sulfide ions. The high resolution images of CdS/TiO2 nanocomposite films were provided by field emission scanning electron microscope. Theirs chemical identification and quantitative compositional information, crystallinity and actual chemical compounds formed were determined by energy dispersive spectroscopy, X-ray diffraction and X-ray photoelectron spectroscopy, respectively. The results indicated that the photoelectrochemical activity of the films depended strongly on CdS content. From the preparation of CdS/TiO2 nanocomposite films by 5, 10 and 15 dipping cycles in the chemical solutions, the best photoelectrochemical response was revealed by the 10 dipping cycles-prepared film. Galvanic couple testing demonstrated that the photoelectrochemical response of the film decreased continuously compared to that of anodized nanoporous TiO2 substrate which described by photocorrosion of CdS nanoparticles. In addition, chloride-ion attack also induced pitting corrosion leading to fluctuation and deterioration of photoelectrochemical response. CdO2 and Cd(OH)2 depositions were found as the main photocorrosion products on collapsed nanostructured-surface. The relevance between photoelectrochemical response and corrosion behavior of CdS/TiO2 nanocomposite film was discussed in detail.

Deposition of silicon oxynitride films by low energy ion beam assisted nitridation at room temperature

Science.gov (United States)

Youroukov, S.; Kitova, S.; Danev, G.

2008-05-01

The possibility is studied of growing thin silicon oxynitride films by e-gun evaporation of SiO and SiO2 together with concurrent bombardment with low energy N2+ ions from a cyclotron resonance (ECR) source at room temperature of substrates. The degree of nitridation and oxidation of the films is investigated by means of X-ray spectroscopy. The optical characteristics of the films, their environmental stability and adhesion to different substrates are examined. The results obtained show than the films deposited are transparent. It is found that in the case of SiO evaporation with concurrent N2+ ion bombardment, reactive implantation of nitrogen within the films takes place at room temperature of the substrate with the formation of a new silicon oxynitride compound even at low ion energy (150-200 eV).

Heat shrink formation of a corrugated thin film thermoelectric generator

International Nuclear Information System (INIS)

Sun, Tianlei; Peavey, Jennifer L.; David Shelby, M.; Ferguson, Scott; O’Connor, Brendan T.

2015-01-01

Highlights: • Demonstrate and characterize a thermoelectric generator with a corrugated geometry. • Employ a novel heat shrink fabrication approach compatible with low-cost processing. • Use thermal impedance modeling to explore design potential. • Corrugated design shown to be advantageous for low heat-flux density applications. - Abstract: A thin film thermoelectric (TE) generator with a corrugated architecture is demonstrated formed using a heat-shrink fabrication approach. Fabrication of the corrugated TE structure consists of depositing thin film thermoelectric elements onto a planar non-shrink polyimide substrate that is then sandwiched between two uniaxial stretch-oriented co-polyester (PET) films. The heat shrink PET films are adhered to the polyimide in select locations, such that when the structure is placed in a high temperature environment, the outer films shrink resulting in a corrugated core film and thermoelectric elements spanning between the outer PET films. The module has a cross-plane heat transfer architecture similar to a conventional bulk TE module, but with heat transfer in the plane of the thin film thermoelectric elements, which assists in maintaining a significant temperature difference across the thermoelectric junctions. In this demonstration, Ag and Ni films are used as the thermoelectric elements and a Seebeck coefficient of 14 μV K −1 is measured with a maximum power output of 0.22 nW per couple at a temperature difference of 7.0 K. We then theoretically consider the performance of this device architecture with high performance thermoelectric materials in the heat sink limited regime. The results show that the heat-shrink approach is a simple fabrication method that may be advantageous in large-area, low power density applications. The fabrication method is also compatible with simple geometric modification to achieve various form factors and power densities to customize the TE generator for a range of applications

Low-temperature growth of highly crystallized transparent conductive fluorine-doped tin oxide films by intermittent spray pyrolysis deposition

Energy Technology Data Exchange (ETDEWEB)

Fukano, Tatsuo; Motohiro, Tomoyoshi [Toyota Central Research and Development Laboratories Inc., Nagakute, Aichi 480-1192 (Japan)

2004-05-30

Following the procedure by Sawada et al. (Thin Solid Films 409 (2002) 46), high-quality SnO{sub 2}:F films were grown on glass substrates at relatively low temperatures of 325-340C by intermittent spray pyrolysis deposition using a perfume atomizer for cosmetics use. Even though the substrate temperature is low, as-deposited films show a high optical transmittance of 92% in the visible range, a low electric resistivity of 5.8x10{sup -4}{omega}cm and a high Hall mobility of 28cm{sup 2}/Vs. The F/Sn atomic ratio (0.0074) in the films is low in comparison with the value (0.5) in the sprayed solution. The carrier density in the film is approximately equal to the F-ion density, suggesting that most of the F-ions effectively function as active dopants. Films' transmittance and resistivity show little change after a 450C 60min heat treatment in the atmosphere, evidencing a high heat resistance. The SnO{sub 2}:F films obtained in this work remove the difficulty to improve the figure of merit at low synthesis temperatures.

Polycrystalline Mg2Si thin films: A theoretical investigation of their electronic transport properties

International Nuclear Information System (INIS)

Balout, H.; Boulet, P.; Record, M.-C.

2015-01-01

The electronic structures and thermoelectric properties of a polycrystalline Mg 2 Si thin film have been investigated by first-principle density-functional theory (DFT) and Boltzmann transport theory calculations within the constant-relaxation time approximation. The polycrystalline thin film has been simulated by assembling three types of slabs each having the orientation (001), (110) or (111) with a thickness of about 18 Å. The effect of applying the relaxation procedure to the thin film induces disorder in the structure that has been ascertained by calculating radial distribution functions. For the calculations of the thermoelectric properties, the energy gap has been fixed at the experimental value of 0.74 eV. The thermoelectric properties, namely the Seebeck coefficient, the electrical conductivity and the power factor, have been determined at three temperatures of 350 K, 600 K and 900 K with respect to both the energy levels and the p-type and n-type doping levels. The best Seebeck coefficient is obtained at 350 K: the S yy component of the tensor amounts to about ±1000 μV K −1 , depending on the type of charge carriers. However, the electrical conductivity is much too small which results in low values of the figure of merit ZT. Structure–property relationship correlations based on directional radial distribution functions allow us to tentatively draw some explanations regarding the anisotropy of the electrical conductivity. Finally, the low ZT values obtained for the polycrystalline Mg 2 Si thin film are paralleled with those recently reported in the literature for bulk chalcogenide glasses. - Graphical abstract: Structure of the polycrystalline thin film of Mg 2 Si. - Author-Highlights: • Polycrystalline Mg 2 Si film has been modelled by DFT approach. • Thermoelectric properties have been evaluated by semi-classical Boltzmann theory. • The structure was found to be slightly disordered after relaxation. • The highest value of Seebeck

Ultraviolet emitting (Y1-xGd x)2O3-δ thin films deposited by radio frequency magnetron sputtering; structure-property-thin film processing relationships

International Nuclear Information System (INIS)

Fowlkes, J.D.; Fitz-Gerald, J.M.; Rack, P.D.

2007-01-01

The effects that the oxygen partial pressure, substrate temperature and annealing temperature have on the cathodoluminescence (CL) efficiency of radio frequency magnetron sputter deposited Gd-doped Y 2 O 3 thin films is investigated. Furthermore these sputtering parameters are correlated to the degree of crystallinity, the phases present (cubic (α) versus monoclinic (β) Y 2 O 3 ), and the stoichiometry of the thin films. Films deposited at room temperature (RT) did not CL, however, the films were activated by a post-deposition anneal at 1273 K for 6 h. Films deposited at 873 K had a very low CL efficiency which was significantly enhanced by a post-deposition anneal. For RT deposited films the external CL efficiency increased with increasing oxygen partial pressure for the range studied, however the opposite trend was observed for the 873 K deposited films. Examination of the morphology and grain size of the high temperature deposited films revealed that the average grain size increased with decreasing partial pressure and the observed increase in the external CL efficiency was attributed to enhanced anomalous diffraction. An intrinsic CL efficiency term was determined to circumvent the effects of the enhanced anomalous diffraction, and the CL efficiency was correlated to the integrated intensity of the (222) of the cubic α-Y 2 O 3 phase

Low-cost fabrication of WO{sub 3} films using a room temperature and low-vacuum air-spray based deposition system for inorganic electrochromic device applications

Energy Technology Data Exchange (ETDEWEB)

Park, Sung-Ik [Department of Mechanical and Aerospace Engineering, Seoul National University, Seoul (Korea, Republic of); Kim, Sooyeun, E-mail: sooyeunk@u.washington.edu [Department of Mechanical Engineering, University of Washington, Seattle, WA (United States); Choi, Jung-Oh; Song, Ji-Hyeon [Department of Mechanical and Aerospace Engineering, Seoul National University, Seoul (Korea, Republic of); Taya, Minoru [Department of Mechanical Engineering, University of Washington, Seattle, WA (United States); Ahn, Sung-Hoon, E-mail: ahnsh@snu.ac.kr [Department of Mechanical and Aerospace Engineering, Seoul National University, Seoul (Korea, Republic of); Institute of Advanced Machines and Design, Seoul (Korea, Republic of)

2015-08-31

We report the deposition of tungsten oxide (WO{sub 3}) thin films on fluorine-doped tin oxide (FTO) and indium-doped tin oxide (ITO) glass substrates by using a room-temperature deposition system based on low-vacuum air-spray for the fabrication of inorganic electrochromic windows. The structure of the WO{sub 3} films was characterized using X-ray diffraction, and the surface morphology and film thickness were investigated using scanning electron microscopy and atomic force microscopy. The color of the prepared WO{sub 3} films changed from slight yellow to dark blue under applied voltages, demonstrating electrochromism. The WO{sub 3} film coated FTO glass exhibited a large electrochromic contrast of up to 50% at a wavelength of 800 nm. The electrochemical properties of the films were examined using cyclic voltammetry and chronocoulometry. - Highlights: • WO{sub 3} thin films were fabricated using an air-spray based deposition system at room temperature under low-vacuum conditions. • Dry WO{sub 3} particles were directly deposited on FTO and ITO glasses by using a low-cost deposition system. • The FTO glass based WO{sub 3} film showed the optical contrast of 50% at a wavelength of 800 nm.

Tungsten oxide thin films obtained by anodisation in low electrolyte concentration

Energy Technology Data Exchange (ETDEWEB)

Costa, Nadja B.D. da [Centro de Ciências Químicas, Farmacêuticas e de Alimentos, Universidade Federal de Pelotas, Campus Capão do Leão, s/n, Pelotas, RS (Brazil); Pazinato, Julia C.O. [Instituto de Química, Universidade Federal do Rio Grande do Sul, Av. Bento Gonçalves, 9500 Porto Alegre, RS (Brazil); Sombrio, Guilherme; Pereira, Marcelo B.; Boudinov, Henri [Instituto de Física, Universidade Federal do Rio Grande do Sul, Av. Bento Gonçalves, 9500 Porto Alegre, RS (Brazil); Gündel, André; Moreira, Eduardo C. [Universidade Federal do Pampa, Travessa 45, 1650 Bagé, RS (Brazil); Garcia, Irene T.S., E-mail: irene.garcia@ufrgs.br [Instituto de Química, Universidade Federal do Rio Grande do Sul, Av. Bento Gonçalves, 9500 Porto Alegre, RS (Brazil)

2015-03-02

Tungsten oxide nanostructured films were grown on tungsten substrates by anodisation under a fixed voltage and with sodium fluoride as electrolyte. The effect of the anion chloride and the influence of the modifying agent disodium hydrogen phosphate in the tungsten oxide films were also investigated. The structural characterisation of the films was performed by scanning electron microscopy, atomic force microscopy and Raman spectroscopy. The band gap was determined through diffuse reflectance spectroscopy. The thin films were photoluminescent and emitted in the range of 300 to 630 nm when irradiated at 266 nm. The synthesised films efficiently degraded of methyl orange dye in the presence of hydrogen peroxide and 250 nm radiation. The modifying agent was responsible for the improvement of the photocatalytic activity. Films with similar photocatalytic performance were obtained when the system sodium fluoride and disodium hydrogen phosphate were replaced by sodium chloride. The porous structure and low band gap values were responsible for the photocatalytic behaviour. - Highlights: • Tungsten oxide thin films were obtained by anodisation of tungsten in aqueous media. • The performance of the NaCl, NaF and NaF/Na{sub 2}HPO{sub 4} as electrolytes was investigated. • The relation between structure and optical behaviour has been discussed. • Films obtained with NaCl and NaF/Na{sub 2}HPO{sub 4} present similar photocatalytic activity.

High temperature superconducting films by rf magnetron sputtering

International Nuclear Information System (INIS)

Kadin, A.M.; Ballentine, P.H.

1989-01-01

The authors have produced sputtered films of Y-Ba-Cu-O and Bi-Sr-Ca-Cu-O by rf magnetron sputtering from an oxide target consisting of loose reacted powder. The use of a large 8-inch stoichiometric target in the magnetron mode permits films located above the central region to be free of negative-ion resputtering effects, and hence yields reproducible, uniform stoichiometric compositions for a wide range of substrate temperatures. Superconducting YBCO films have been obtained either by sputtering at low temperatures followed by an 850 0 C oxygen anneal, or alternatively by depositing onto substrates heated to ∼600 - 650 0 C and cooling in oxygen. Films prepared by the former method on cubic zirconia substrate consist of randomly oriented crystallites with zero resistance above 83 K. Those deposited on zirconia at medium temperatures without the high-temperature anneal contain smooth partially oriented crystallites, with a slightly depressed T/sub c/ ∼75K. Finally, superconducting films have been deposited on MgO using a BiSrCaCu/sub 2/O/sub x/ powder target

Influence of annealing on X-ray radiation sensing properties of TiO2 thin film

Science.gov (United States)

Sarma, M. P.; Kalita, J. M.; Wary, G.

2018-03-01

A recent study shows that the titanium dioxide (TiO2) thin film synthesised by a chemical bath deposition technique is a very useful material for the X-ray radiation sensor. In this work, we reported the influence of annealing on the X-ray radiation detection sensitivity of the TiO2 film. The films were annealed at 333 K, 363 K, 393 K, 473 K, and 573 K for 1 hour. Structural analyses showed that the microstrain and dislocation density decreased whereas the average crystallite size increased with annealing. The band gap of the films also decreased from 3.26 eV to 3.10 eV after annealing. The I-V characteristics record under the dark condition and under the X-ray irradiation showed that the conductivity increased with annealing. The influence of annealing on the detection sensitivity was negligible if the bias voltage applied across the films was low (within 0.2 V‒1.0 V). At higher bias voltage (>1.0 V), the contribution of electrons excited by X-ray became less significant which affected the detection sensitivity.

LET dependence of GafChromic films and an ion chamber in low-energy proton dosimetry

Energy Technology Data Exchange (ETDEWEB)

Kirby, Daniel; Parker, David [School of Physics and Astronomy, University of Birmingham, Birmingham, B15 2TT (United Kingdom); Green, Stuart; Hugtenburg, Richard; Wojnecki, Cecile [Department of Medical Physics, University Hospital Birmingham NHS Trust, Birmingham, B15 2TH (United Kingdom); Palmans, Hugo [National Physical Laboratory, Acoustics and Ionizing Radiation, Teddington (United Kingdom)], E-mail: djk191@bham.ac.uk

2010-01-21

Dosimetry using a PMMA phantom was performed in 15 and 29 MeV proton beams from the Birmingham cyclotron, with a Markus parallel-plate ionization chamber and GafChromic EBT and MD-V2-55 film. Simulations of the depth-dose curves were performed with FLUKA 2008.3 and MCNPX 2.5.0, which agreed almost perfectly with each other in range and only differed by 2% in the Bragg peak (BP) region. FLUKA was also used to calculate k{sub Q} factors for Markus chamber measurements as an improvement to the IAEA TRS-398 values in low-energy beams. FLUKA depth-dose simulations overestimate the BP height measured by ion chamber by about 10%, where the initial proton energy spread was estimated by fitting to the slope of the measured BP distal edge. Both GafChromic films showed an under-response in the BP compared to ion chamber; however, EBT exhibits this effect at lower energies than MD-V2-55. A possible reason for this is attributed to the shape and arrangement of the monomer particles being different in the active components of EBT and MD-V2-55. Relative effectiveness (RE) of both films is presented as functions of residual range R{sub res} in water and peak proton energy determined by FLUKA, with considerations for the spatial separation of the two active layers in each film. The proton energies at which RE reduces to 90% of maximum film response are 6.7 and 3.2 MeV for MD-V2-55 and EBT, respectively. Additionally, a beam quality correction factor (g{sub Q,Q{sub 0}}) is suggested for both GafChromic films, involving water-to-film stopping power ratios evaluated using ICRU recommendations, and a polymer yield factor G{sub Q{sub 0}}/G{sub Q}. RE in this work is equated to the reciprocal of the polymer yield factor. The calculated values of (s{sub w,film}){sub Q} /(s{sub w,film}){sub Q{sub 0}} are constant within 2.1% and 1.2% across the proton energy range of 1-300 MeV for EBT and MD-V2-55, respectively, so it is concluded that the polymer yield factor is the dominant factor

Low-temperature (200 C or below) fabrication of diamond films for electronic application

International Nuclear Information System (INIS)

Hiraki, A.

2003-01-01

Fabrication of Diamond (including Diamond Like Carbon: DLC) films as electronic materials, for example: to be used as electron-emitter, requires several following conditions. They are: 1 ) Low temperature fabrication (or deposition on several substrates and sometimes ones with low melting point, like glasses) below 400 C, 2) Wide area film deposition onto wide substrates of several square inches, like Si wafer and glass substrate, 3) Reproducible deposition of well defined film quality, 4) others. In these respects, we have initiated, in the author's laboratories at Osaka University and Kochi University of Technology, a quite new approach to satisfy the above requirements by using microwave plasma CVD under a magnetic field to be called as m agneto-active plasma CVD . The films fabricated by the magnets-active plasma CVD and also recently by cathodic arc methods combined with cur special nano-seeding method, have been utilized for electron emitter to exhibit very high efficiency. (Author)

Colloidal CuInSe2 nanocrystals thin films of low surface roughness

Science.gov (United States)

de Kergommeaux, Antoine; Fiore, Angela; Faure-Vincent, Jérôme; Pron, Adam; Reiss, Peter

2013-03-01

Thin-film processing of colloidal semiconductor nanocrystals (NCs) is a prerequisite for their use in (opto-)electronic devices. The commonly used spin-coating is highly materials consuming as the overwhelming amount of deposited matter is ejected from the substrate during the spinning process. Also, the well-known dip-coating and drop-casting procedures present disadvantages in terms of the surface roughness and control of the film thickness. We show that the doctor blade technique is an efficient method for preparing nanocrystal films of controlled thickness and low surface roughness. In particular, by optimizing the deposition conditions, smooth and pinhole-free films of 11 nm CuInSe2 NCs have been obtained exhibiting a surface roughness of 13 nm root mean square (rms) for a 350 nm thick film, and less than 4 nm rms for a 75 nm thick film. Invited talk at the 6th International Workshop on Advanced Materials Science and Nanotechnology, 30 October-2 November 2012, Ha Long, Vietnam.

Low-temperature growth of low friction wear-resistant amorphous carbon nitride thin films by mid-frequency, high power impulse, and direct current magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Bakoglidis, Konstantinos D., E-mail: konba@ifm.liu.se; Schmidt, Susann; Garbrecht, Magnus; Ivanov, Ivan G.; Jensen, Jens; Greczynski, Grzegorz; Hultman, Lars [Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden)

2015-09-15

The potential of different magnetron sputtering techniques for the synthesis of low friction and wear resistant amorphous carbon nitride (a-CN{sub x}) thin films onto temperature-sensitive AISI52100 bearing steel, but also Si(001) substrates was studied. Hence, a substrate temperature of 150 °C was chosen for the film synthesis. The a-CN{sub x} films were deposited using mid-frequency magnetron sputtering (MFMS) with an MF bias voltage, high power impulse magnetron sputtering (HiPIMS) with a synchronized HiPIMS bias voltage, and direct current magnetron sputtering (DCMS) with a DC bias voltage. The films were deposited using a N{sub 2}/Ar flow ratio of 0.16 at the total pressure of 400 mPa. The negative bias voltage, V{sub s}, was varied from 20 to 120 V in each of the three deposition modes. The microstructure of the films was characterized by high-resolution transmission electron microscopy and selected area electron diffraction, while the film morphology was investigated by scanning electron microscopy. All films possessed an amorphous microstructure, while the film morphology changed with the bias voltage. Layers grown applying the lowest substrate bias of 20 V exhibited pronounced intercolumnar porosity, independent of the sputter technique. Voids closed and dense films are formed at V{sub s} ≥ 60 V, V{sub s} ≥ 100 V, and V{sub s} = 120 V for MFMS, DCMS, and HiPIMS, respectively. X-ray photoelectron spectroscopy revealed that the nitrogen-to-carbon ratio, N/C, of the films ranged between 0.2 and 0.24. Elastic recoil detection analysis showed that Ar content varied between 0 and 0.8 at. % and increased as a function of V{sub s} for all deposition techniques. All films exhibited compressive residual stress, σ, which depends on the growth method; HiPIMS produces the least stressed films with values ranging between −0.4 and −1.2 GPa for all V{sub s}, while CN{sub x} films deposited by MFMS showed residual stresses up to −4.2�

Preparation and analysis of superconducting Nb-Ge films

International Nuclear Information System (INIS)

Testardi, L.R.; Meek, R.L.; Poate, J.M.; Royer, W.A.; Storm, A.R.; Wernick, J.H.

1975-01-01

The dependences of T/subc/, resistivity, resistance ratio, and structure on chemical composition and sputtering conditions for Nb-Ge films have been studied. The chemical composition, impurity content, and x-ray structure were obtained using Rutherford backscattering, nuclear techniques, and x-ray diffraction. Although T/subc/ varies with composition, it is not found to be critically dependent upon exact stoichiometry; the Nb/Ge ratios vary by approx. 13% (2.6 to 3) for films with approx. 23-K onsets and by approx. 40% (2.2 to 3.3) for films with approx. 20-K onsets. For compositions similar to the bulk, the films have comparitively much higher T/subc/'s and smaller lattice parameters. X-ray results show the films to contain predominately A-15 phase (except for Nb/Ge less-than or equal to 2.5) with lattice parameters varying from 5.15 A for Nb-rich low-T/subc/ films to 5.12 A for Ge-rich films. Several percent of oxygen and carbon occur in low-T/subc/ amorphous films deposited at 650 degreeC but this is considerably reduced in high-T/subc/ films made simultaneously at approx. 750 degreeC. No argon was found and the nitrogen content was generally less than 1%. No correlation of high T/subc/'s and impurities was found. The optimum deposition temperature and resistivity are lowest, and the resistance ratio highest for Nb/Ge ratios somewhat below 3/1. A simple correlation of T/subc/ and resistance ratio is reported which is largely independent of all sputtering conditions and composition and which suggests that slightly higher T/subc/'s may be possible. Negative bias was found to be detrimental to T/subc/ while positive bias had relatively little effect. Magnetic-field-assisted sputtering led to significant increases in the sputtering rate and the optimum deposition temperature

Effect of crystal structure on strontium titanate thin films and their dielectric properties

Science.gov (United States)

Kampangkeaw, Satreerat

Strontium titanate (SrTiO3 or STO) has application in radio and microwave-frequency tunable capacitor devices particularly at low temperatures due to its high dielectric constant, low loss and the electric field tunability of its dielectric constant. The main goal of improving the performance in these devices is to increase the tunability and decrease the dielectric loss at the same time, especially at microwave frequencies. Thin films of STO however, show dramatic differences compared to the bulk. The dielectric constant of bulk STO increases nonlinearly from 300 at room temperature to 30000 at 4 K and the loss range is 10-3--10 -4. On the other hand. STO thin films, while showing a dielectric constant close to 300 at room temperature, typically reach a maximum between 1000 and 10000 in the 30 K to 100 K range before decreasing, and the high-loss range is 10-2--10-3. We have grown strontium titanate thin films using a pulsed laser deposition technique on substrates selected to have a small lattice mismatch between the film and substrate. Neodymium gallate (NdGaO3 or NGO) and lanthanum aluminate (LaAlO3 or LAO) substrates were good candidates due to only 1--2% mismatching. Film capacitor devices were fabricated with 25 micron gap separation. 1.5 mm total gap length and an overall 1 x 2 mm dimension using standard lithography and gold metal evaporative techniques. Their nonlinear dielectric constant and loss tangent were measured at low frequencies and also at 2 GHz, and from room temperature down to 4 K. The resulting films show significant variations of dielectric properties with position on the substrates with respect to the deposition plume axis. In the presence of DC electric fields up to +/-4 V/mum, STO films show improved dielectric tunability and low loss in regions far from the plume axis. We found that the films grown on NCO have lower dielectric loss than those on LAO due to a closer match of the NCO lattice to that of STO. We investigated the possible

Study of the Radiochromic Film for High Dose Measurement in Radiation Processing

Directory of Open Access Journals (Sweden)

CHEN Yi-zhen

2016-02-01

Full Text Available To establish the radiochromic film dosimeter for high dose level measurement during radiation processing, By corresponding formula and its preparation process research, batches of radiochromic film dosimeters were prepared using nylon as substrate and pararosaniline cyanide as dye. In Co-60 gamma reference radiation field, dosimetry response performance of radiochromic film was studied and results showed that the repeatability was good to 1.0%. The response curves demonstrated good linearity in the dose range of 5-210 kGy, and the signal of radiochromic film dosimeters after irradiation under the condition of low temperature storage within 2 weeks was stable. In addition, the radiochromic film dosimeters were not found to have noticeable dose rate dependence in the range of this experiment. In the linear dose range, radiochromic film dosimeter measures the absorbed dose, with extended uncertainty 4.2% (k=2 for Co-60 gamma rays. The film was suitable as dosimeters for the parameters measurement of the electron beam on the accelerator.

Deposition of silicon oxynitride films by low energy ion beam assisted nitridation at room temperature

Energy Technology Data Exchange (ETDEWEB)

Youroukov, S; Kitova, S; Danev, G [Central Laboratory of Photoprocesses, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl. 109, 113 Sofia (Bulgaria)], E-mail: skitova@clf.bas.bg

2008-05-01

The possibility is studied of growing thin silicon oxynitride films by e-gun evaporation of SiO and SiO{sub 2} together with concurrent bombardment with low energy N{sub 2}{sup +} ions from a cyclotron resonance (ECR) source at room temperature of substrates. The degree of nitridation and oxidation of the films is investigated by means of X-ray spectroscopy. The optical characteristics of the films, their environmental stability and adhesion to different substrates are examined. The results obtained show than the films deposited are transparent. It is found that in the case of SiO evaporation with concurrent N{sub 2}{sup +} ion bombardment, reactive implantation of nitrogen within the films takes place at room temperature of the substrate with the formation of a new silicon oxynitride compound even at low ion energy (150-200 eV)

Deposition of organosilicone thin film from hexamethyldisiloxane (HMDSO) with 50 kHz/33 MHz dual-frequency atmospheric-pressure plasma jet

Science.gov (United States)

Li, Jiaojiao; Yuan, Qianghua; Chang, Xiaowei; Wang, Yong; Yin, Guiqin; Dong, Chenzhong

2017-04-01

The deposition of organosilicone thin films from hexamethyldisiloxane(HMDSO) by using a dual-frequency (50 kHz/33 MHz) atmospheric-pressure micro-plasma jet with an admixture of a small volume of HMDSO and Ar was investigated. The topography was measured by using scanning electron microscopy. The chemical bond and composition of these films were analyzed by Fourier transform infrared spectroscopy (FTIR) and x-ray photoelectron spectroscopy. The results indicated that the as-deposited film was constituted by silicon, carbon, and oxygen elements, and FTIR suggested the films are organosilicon with the organic component (-CH x ) and hydroxyl functional group(-OH) connected to the Si-O-Si backbone. Thin-film hardness was recorded by an MH-5-VM Digital Micro-Hardness Tester. Radio frequency power had a strong impact on film hardness and the hardness increased with increasing power.

Quantifying resistances across nanoscale low- and high-angle interspherulite boundaries in solution-processed organic semiconductor thin films.

Science.gov (United States)

Lee, Stephanie S; Mativetsky, Jeffrey M; Loth, Marsha A; Anthony, John E; Loo, Yueh-Lin

2012-11-27

The nanoscale boundaries formed when neighboring spherulites impinge in polycrystalline, solution-processed organic semiconductor thin films act as bottlenecks to charge transport, significantly reducing organic thin-film transistor mobility in devices comprising spherulitic thin films as the active layers. These interspherulite boundaries (ISBs) are structurally complex, with varying angles of molecular orientation mismatch along their lengths. We have successfully engineered exclusively low- and exclusively high-angle ISBs to elucidate how the angle of molecular orientation mismatch at ISBs affects their resistivities in triethylsilylethynyl anthradithiophene thin films. Conductive AFM and four-probe measurements reveal that current flow is unaffected by the presence of low-angle ISBs, whereas current flow is significantly disrupted across high-angle ISBs. In the latter case, we estimate the resistivity to be 22 MΩμm(2)/width of the ISB, only less than a quarter of the resistivity measured across low-angle grain boundaries in thermally evaporated sexithiophene thin films. This discrepancy in resistivities across ISBs in solution-processed organic semiconductor thin films and grain boundaries in thermally evaporated organic semiconductor thin films likely arises from inherent differences in the nature of film formation in the respective systems.