WorldWideScience

Sample records for low-energy ion-irradiated silicon

  1. Deep-level transient spectroscopy of low-energy ion-irradiated silicon

    DEFF Research Database (Denmark)

    Kolkovsky, Vladimir; Privitera, V.; Nylandsted Larsen, Arne

    2009-01-01

     During electron-gun deposition of metal layers on semiconductors, the semiconductor is bombarded with low-energy metal ions creating defects in the outermost surface layer. For many years, it has been a puzzle why deep-level transient spectroscopy spectra of the as-deposited, electron-gun evapor...

  2. Low energy helium ion irradiation induced nanostructure formation on tungsten surface

    International Nuclear Information System (INIS)

    Al-Ajlony, A.; Tripathi, J.K.; Hassanein, A.

    2017-01-01

    We report on the low energy helium ion irradiation induced surface morphology changes on tungsten (W) surfaces under extreme conditions. Surface morphology changes on W surfaces were monitored as a function of helium ion energy (140–300 eV), fluence (2.3 × 10 24 –1.6 × 10 25 ions m −2 ), and flux (2.0 × 10 20 –5.5 × 10 20 ion m −2 s −1 ). All the experiments were performed at 900° C. Our study shows significant effect of all the three ion irradiation parameters (ion flux, fluence, and energy) on the surface morphology. However, the effect of ion flux is more pronounced. Variation of helium ion fluence allows to capture the very early stages of fuzz growth. The observed fuzz growth and morphology changes were understood in the realm of various possible phenomena. The study has relevance and important impact in the current and future nuclear fusion applications. - Highlights: •Reporting formation of W nanostructure (fuzz) due to low energy He ion beam irradiation. •Observing the very early stages for the W-Fuzz formation. •Tracking the surface morphological evolution during the He irradiation. •Discussing in depth our observation and drawing a possible scenario that explain this phenomenon. •Studying various ions irradiation parameters such as flux, fluence, and ions energy.

  3. Low energy helium ion irradiation induced nanostructure formation on tungsten surface

    Energy Technology Data Exchange (ETDEWEB)

    Al-Ajlony, A., E-mail: montaserajlony@yahoo.com; Tripathi, J.K.; Hassanein, A.

    2017-05-15

    We report on the low energy helium ion irradiation induced surface morphology changes on tungsten (W) surfaces under extreme conditions. Surface morphology changes on W surfaces were monitored as a function of helium ion energy (140–300 eV), fluence (2.3 × 10{sup 24}–1.6 × 10{sup 25} ions m{sup −2}), and flux (2.0 × 10{sup 20}–5.5 × 10{sup 20} ion m{sup −2} s{sup −1}). All the experiments were performed at 900° C. Our study shows significant effect of all the three ion irradiation parameters (ion flux, fluence, and energy) on the surface morphology. However, the effect of ion flux is more pronounced. Variation of helium ion fluence allows to capture the very early stages of fuzz growth. The observed fuzz growth and morphology changes were understood in the realm of various possible phenomena. The study has relevance and important impact in the current and future nuclear fusion applications. - Highlights: •Reporting formation of W nanostructure (fuzz) due to low energy He ion beam irradiation. •Observing the very early stages for the W-Fuzz formation. •Tracking the surface morphological evolution during the He irradiation. •Discussing in depth our observation and drawing a possible scenario that explain this phenomenon. •Studying various ions irradiation parameters such as flux, fluence, and ions energy.

  4. Self-organization processes and nanocluster formation in crystal lattices by low-energy ion irradiation

    International Nuclear Information System (INIS)

    Tereshko, I.; Abidzina, V.; Tereshko, A.; Glushchenko, V.; Elkin, I.

    2007-01-01

    The goal of this paper is to study self-organization processes that cause nanostructural evolution in nonlinear crystal media. The subjects of the investigation were nonlinear homogeneous and heterogeneous atom chains. The method of computer simulation was used to investigate the interaction between low-energy ions and crystal lattices. It was based on the conception of three-dimensional lattice as a nonlinear atom chain system. We showed that that in homogeneous atom chains critical energy needed for self-organization processes development is less than for nonlinear atom chain with already embedded clusters. The possibility of nanostructure formation was studied by a molecular dynamics method of nonlinear oscillations in atomic oscillator systems of crystal lattices after their low-energy ion irradiation. (authors)

  5. Low energy ion implantation and high energy heavy ion irradiation in C60 films

    International Nuclear Information System (INIS)

    Narayanan, K.L.; Yamaguchi, M.; Dharmarasu, N.; Kojima, N.; Kanjilal, D.

    2001-01-01

    C 60 films have been bombarded with low energy boron ions and high energy swift heavy ions (SHI) of silver and oxygen at different doses. Raman scattering and Fourier transform infrared (FTIR) studies were carried out on the virgin and irradiated films and the results are in good agreement with each other. The films subject to low energy boron ion implantation showed destruction of the bukky balls whereas the films subject to high energy ion irradiation did not show appreciable effects on their structure. These results indicate that C 60 films are more prone to defects by elastic collision and subsequent implantation at lower energy. Irradiation at higher energy was less effective in creating appreciable defects through electronic excitation by inelastic collisions at similar energy density

  6. Formation of nanostructures on HOPG surface in presence of surfactant atom during low energy ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Ranjan, M., E-mail: ranjanm@ipr.res.in; Joshi, P.; Mukherjee, S.

    2016-07-15

    Low energy ions beam often develop periodic patterns on surfaces under normal or off-normal incidence. Formation of such periodic patterns depends on the substrate material, the ion beam parameters, and the processing conditions. Processing conditions introduce unwanted contaminant atoms, which also play strong role in pattern formation by changing the effective sputtering yield of the material. In this work we have analysed the effect of Cu, Fe and Al impurities introduced during low energy Ar{sup +} ion irradiation on HOPG substrate. It is observed that by changing the species of foreign atoms the surface topography changes drastically. The observed surface topography is co-related with the modified sputtering yield of HOPG. Presence of Cu and Fe amplify the effective sputtering yield of HOPG, so that the required threshold for the pattern formation is achieved with the given fluence, whereas Al does not lead to any significant change in the effective yield and hence no pattern formation occurs.

  7. Plant height revertants of Dominant Semidwarf mutant rice created by low-energy ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Liu Binmei [Key Laboratory of Ion Beam Bioengineering, Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031 (China); Wu Yuejin [Key Laboratory of Ion Beam Bioengineering, Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031 (China)], E-mail: yjwu@ipp.ac.cn; Xu Xue; Song, M.; Zhao, M. [Key Laboratory of Ion Beam Bioengineering, Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031 (China); Fu, X.D. [Institute of Genetics and Developmental Biology, Chinese Academy of Sciences, Beijing 100101 (China)

    2008-04-15

    Dominant Semidwarf mutant rice (Sdd) was obtained from its wild type (WT) by irradiation with a low-energy ion beam. Six tall revertants of Sdd were induced by irradiation. The revertants restored the plant height to that of WT plants. Investigation of the agronomic character and genetic analysis indicate that the revertants are similar to WT plants with putative different inherited mutations. The revertants were checked for DNA differences using the simple sequence repeat technique. Among 408 such primers used, only 2 primers detected mutation sites in the revertants, which provided the molecular evidence for the revertants induced from Sdd. This study indicates that ion irradiation may be used as a mutagen to create revertants for plant architecture studies and could be a new application.

  8. Tuning surface porosity on vanadium surface by low energy He{sup +} ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Tripathi, J.K., E-mail: jtripat@purdue.edu; Novakowski, T.J.; Hassanein, A.

    2016-08-15

    Highlights: • Surface nanostructuring on vanadium surface using novel He{sup +} ion irradiation process. • Tuning surface-porosity using high-flux, low-energy He{sup +} ion irradiation at constant elevated sample temperature (823–173 K). • Presented top-down approach guarantees good contact between different crystallites. • Sequential significant enhancement in surface-pore edge size (and corresponding reduction in surface-pore density) with increasing sample temperature. - Abstract: In the present study, we report on tuning the surface porosity on vanadium surfaces using high-flux, low-energy He{sup +} ion irradiation as function of sample temperature. Polished, mirror-finished vanadium samples were irradiated with 100 eV He{sup +} ions at a constant ion-flux of 7.2 × 10{sup 20} ions m{sup −2} s{sup −1} for 1 h duration at constant sample temperatures in the wide range of 823–1173 K. Our results show that the surface porosity of V{sub 2}O{sub 5} (naturally oxidized vanadium porous structure, after taking out from UHV) is strongly correlated to the sample temperature and is highly tunable. In fact, the surface porosity significantly increases with reducing sample temperature and reaches up to ∼87%. Optical reflectivity on these highly porous V{sub 2}O{sub 5} surfaces show ∼0% optical reflectivity at 670 nm wavelength, which is very similar to that of “black metal”. Combined with the naturally high melting point of V{sub 2}O{sub 5}, this very low optical reflectivity suggests potential application in solar power concentration technology. Additionally, this top-down approach guarantees relatively good contact between the different crystallites and avoids electrical conductivity limitations (if required). Since V{sub 2}O{sub 5} is naturally a potential photocatalytic material, the resulting sub-micron-sized cube-shaped porous structures could be used in solar water splitting for hydrogen production in energy applications.

  9. Electrophoresis examination of strand breaks in plasmid DNA induced by low-energy nitrogen ion irradiation

    International Nuclear Information System (INIS)

    Zhao Yong; Tan Zheng; Du Yanhua; Qiu Guanying

    2003-01-01

    To study the effect on plasmid DNA of heavy ion in the energy range of keV where nuclear stopping interaction becomes more important or even predominant, thin film of plasmid pGEM-3Zf(-) DNA was prepared on aluminum surface and irradiated in vacuum ( -3 Pa) by low-energy nitrogen ions with energy of 30 keV (LET=285 keV/μm) at various fluence ranging from 2 x 10 10 to 8.2 x 10 13 ions/cm 2 . DNA strand breaks were analyzed by neutral electrophoresis followed by quantification with image analysis software. Low-energy nitrogen ion irradiation induced single-, double- and multiple double-strand breaks (DSB) and multiple DSB as the dominating form of DNA damages. Moreover, the linear fluence-response relationship at a low fluence range suggests that DSBs are induced predominantly by single ion track. However, strand break production is limited to a short range in the irradiated samples

  10. Enhanced electrochemical etching of ion irradiated silicon by localized amorphization

    Energy Technology Data Exchange (ETDEWEB)

    Dang, Z. Y.; Breese, M. B. H. [Centre for Ion Beam Applications (CIBA), Department of Physics, National University of Singapore Singapore 117542 (Singapore); Lin, Y.; Tok, E. S. [Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore); Vittone, E. [Physics Department, NIS Excellence Centre and CNISM, University of Torino, via Pietro Giuria 1, 10125 Torino (Italy)

    2014-05-12

    A tailored distribution of ion induced defects in p-type silicon allows subsequent electrochemical anodization to be modified in various ways. Here we describe how a low level of lattice amorphization induced by ion irradiation influences anodization. First, it superposes a chemical etching effect, which is observable at high fluences as a reduced height of a micromachined component. Second, at lower fluences, it greatly enhances electrochemical anodization by allowing a hole diffusion current to flow to the exposed surface. We present an anodization model, which explains all observed effects produced by light ions such as helium and heavy ions such as cesium over a wide range of fluences and irradiation geometries.

  11. The effect of carbon impurities on molybdenum surface morphology evolution under high-flux low-energy helium ion irradiation

    International Nuclear Information System (INIS)

    Tripathi, J.K.; Novakowski, T.J.; Gonderman, S.; Bharadwaj, N.; Hassanein, A.

    2016-01-01

    We report on the role of carbon (C) impurities, in molybdenum (Mo) fuzz evolutions on Mo surface during 100 eV He + ion irradiations. In this study we considered 0.01, 0.05, and 0.5% C + ion impurities in He + ion irradiations. For introducing such tiny C + ion impurities, gas mixtures of He and CH 4 have been chosen in following ratios; 99.95: 0.05, 99.75: 0.25, and 97.5: 2.5. Apart from these three cases, two additional cases, 100% He + ion (for Mo fuzz growth due to only He + ions) and 100% H + ion (for confirming the significance of tiny 0.04–2.0% H + ions in terms of Mo fuzz evolutions on Mo surface, if any), have also been considered. Ion energy (100 eV), ion fluence (2.6 × 10 24  ions m −2 ), and target temperature (923 K) were kept constant for each experiment and their selections were based on our previous studies [1,2]. Our study shows homogeneously populated and highly dense Mo fuzz evolutions on entire Mo surface for 100% He + ion irradiation case. Enhancement of C + ion impurities in He + ions causes a sequential reduction in Mo fuzz evolutions, leading to almost complete prevention of Mo fuzz evolutions for 0.5% C + ion impurity concentrations. Additionally, no fuzz formation for 100% H + ion irradiation at all, were seen (apart from some tiny nano-structuring, in very limited regions). This indicates that there is no significant role of H + ions in Mo fuzz evolutions (at least for such tiny amount, 0.04–2.0% H + ions). The study is significant to understand the behavior of potential high-Z plasma facing components (PFCs), in the, presence of tiny amount of C impurities, for nuclear fusion relevant applications. - Highlights: • Mo Fuzz evolutions due to low-energy high-flux 100% He + ion irradiation. • Sequential reduction in Mo fuzz evolutions with increasing C + ion impurities in He + ions. • Almost complete prevention of Mo fuzz evolutions for 0.5% C + ion impurity in He + ions. • No Mo fuzz formation for 100% H + ion

  12. Behavior of carbon readsorbed on tungsten during low energy Ar ion irradiation at elevated temperatures

    International Nuclear Information System (INIS)

    Pranevicius, L.; Pranevicius, L.L.; Milcius, D.; Templier, C.; Bobrovaite, B.

    2008-01-01

    A study of the behavior of carbon sputtered and readsorbed after scattering collisions with particles of surrounding gas on the tungsten surface affected by Ar ion irradiation with the flux equal to 2 x 10 16 cm -2 s -1 extracted from plasma under 300 V negative bias voltage in the temperature range 370-870 K was performed. The dependence of the W sample weight change on the working gas pressure in the range 0.1-10 Pa was registered and the information was deduced about prevailing sputtering-redeposition processes. The depth profiles of carbon at the tungsten surface were measured. We found that carbon distribution profiles in tungsten depend on the C redeposition rate for fixed ion irradiation parameters. Three regimes have been distinguished: (i) at working gas pressure equal to 5 Pa and more, the C redeposition rate prevails the sample surface erosion rate and the W surface is covered by continuous amorphous carbon film (the C film growth regime), (ii) at working gas pressure equal to about 1 Pa, the C redepostion rate is approximately equal to the erosion rate and the W surface is partially covered by redeposited carbon, and (iii) at working gas pressure less than 0.2 Pa, the erosion rate prevails the C redeposition rate (the W surface erosion regime). In the regime of balanced redeposition and erosion deep C penetration depth into nanocrystalline W was registered. It is suggested that under simultaneous C adsorption and ion irradiation at elevated temperature C adatoms are driven from the W surface into grain boundaries and into the bulk by the difference in chemical potentials between the activated W surface and grain boundaries. As the W surface is covered by amorphous C film, the grain boundaries are blocked and the efficiency of carbon transport decreases

  13. The effect of carbon impurities on molybdenum surface morphology evolution under high-flux low-energy helium ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Tripathi, J.K., E-mail: jtripat@purdue.edu; Novakowski, T.J.; Gonderman, S.; Bharadwaj, N.; Hassanein, A.

    2016-09-15

    We report on the role of carbon (C) impurities, in molybdenum (Mo) fuzz evolutions on Mo surface during 100 eV He{sup +} ion irradiations. In this study we considered 0.01, 0.05, and 0.5% C{sup +} ion impurities in He{sup +} ion irradiations. For introducing such tiny C{sup +} ion impurities, gas mixtures of He and CH{sub 4} have been chosen in following ratios; 99.95: 0.05, 99.75: 0.25, and 97.5: 2.5. Apart from these three cases, two additional cases, 100% He{sup +} ion (for Mo fuzz growth due to only He{sup +} ions) and 100% H{sup +} ion (for confirming the significance of tiny 0.04–2.0% H{sup +} ions in terms of Mo fuzz evolutions on Mo surface, if any), have also been considered. Ion energy (100 eV), ion fluence (2.6 × 10{sup 24} ions m{sup −2}), and target temperature (923 K) were kept constant for each experiment and their selections were based on our previous studies [1,2]. Our study shows homogeneously populated and highly dense Mo fuzz evolutions on entire Mo surface for 100% He{sup +} ion irradiation case. Enhancement of C{sup +} ion impurities in He{sup +} ions causes a sequential reduction in Mo fuzz evolutions, leading to almost complete prevention of Mo fuzz evolutions for 0.5% C{sup +} ion impurity concentrations. Additionally, no fuzz formation for 100% H{sup +} ion irradiation at all, were seen (apart from some tiny nano-structuring, in very limited regions). This indicates that there is no significant role of H{sup +} ions in Mo fuzz evolutions (at least for such tiny amount, 0.04–2.0% H{sup +} ions). The study is significant to understand the behavior of potential high-Z plasma facing components (PFCs), in the, presence of tiny amount of C impurities, for nuclear fusion relevant applications. - Highlights: • Mo Fuzz evolutions due to low-energy high-flux 100% He{sup +} ion irradiation. • Sequential reduction in Mo fuzz evolutions with increasing C{sup +} ion impurities in He{sup +} ions. • Almost complete prevention of Mo

  14. Temperature dependent surface modification of molybdenum due to low energy He+ ion irradiation

    International Nuclear Information System (INIS)

    Tripathi, J.K.; Novakowski, T.J.; Joseph, G.; Linke, J.; Hassanein, A.

    2015-01-01

    In this paper, we report on the temperature dependent surface modifications in molybdenum (Mo) samples due to 100 eV He + ion irradiation in extreme conditions as a potential candidate to plasma-facing components in fusion devices alternative to tungsten. The Mo samples were irradiated at normal incidence, using an ion fluence of 2.6 × 10 24 ions m −2 (with a flux of 7.2 × 10 20 ions m −2 s −1 ). Surface modifications have been studied using high-resolution field emission scanning electron-(SEM) and atomic force (AFM) microscopy. At 773 K target temperature homogeneous evolution of molybdenum nanograins on the entire Mo surface were observed. However, at 823 K target temperature appearance of nano-pores and pin-holes nearby the grain boundaries, and Mo fuzz in patches were observed. The fuzz density increases significantly with target temperatures and continued until 973 K. However, at target temperatures beyond 973 K, counterintuitively, a sequential reduction in the fuzz density has been seen till 1073 K temperatures. At 1173 K and above temperatures, only molybdenum nano structures were observed. Our temperature dependent studies confirm a clear temperature widow, 823–1073 K, for Mo fuzz formation. Ex-situ high resolution X-ray photoelectron spectroscopy studies on Mo fuzzy samples show the evidence of MoO 3 3d doublets. This elucidates that almost all the Mo fuzz were oxidized during open air exposure and are thick enough as well. Likewise the microscopy studies, the optical reflectivity measurements also show a sequential reduction in the reflectivity values (i.e., enhancement in the fuzz density) up to 973 K and after then a sequential enhancement in the reflectivity values (i.e., reduction in the fuzz density) with target temperatures. This is in well agreement with microscopy studies where we observed clear temperature window for Mo fuzz growth

  15. Bioastrophysical Aspects of Low Energy Ion Irradiation of Frozen Anthracene Containing Water

    International Nuclear Information System (INIS)

    Tuleta, M.; Gabla, L.; Madej, J.

    2001-01-01

    The origin of life on Earth remains a fascinating mystery in spite of many theories existing on this subject. However, it seems that simple prebiotic molecules could play an essential role in the formation of more complex organisms. In our experiment, we synthesized a class of these molecules (quinones) bombarding frozen anthracene containing water with low energy hydrogen ions. This experiment roughly simulated the astrophysical conditions which one can find in the solar system. Thus, we can hypothesize that prebiotic molecules could be created by interaction of the solar wind with interplanetary dust grains. The delivery of these molecules to early Earth may have contributed to the generation of life on our planet

  16. Tailoring molybdenum nanostructure evolution by low-energy He{sup +} ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Tripathi, J.K., E-mail: jtripat@purdue.edu; Novakowski, T.J.; Hassanein, A.

    2015-10-30

    Mirror-finished polished molybdenum (Mo) samples were irradiated with 100 eV He{sup +} ions as a function of ion fluence (using a constant flux of 7.2 × 10{sup 20} ions m{sup −2} s{sup −1}) at normal incidence and at 923 K. Mo surface deterioration and nanoscopic fiber-form filament (“Mo fuzz”) growth evolution were monitored by using field emission (FE) scanning electron (SEM) and atomic force (AFM) microscopy studies. Those studies confirm a reasonably clean and flat surface, up to several micrometer scales along with a few mechanical-polishing-induced scratches. However, He{sup +} ion irradiation deteriorates the surface significantly even at 2.1 × 10{sup 23} ions m{sup −2} fluence (about 5 min. irradiation time) and leads to evolution of homogeneously populated ∼75-nm-long Mo nanograins having ∼8 nm intergrain width. The primary stages of Mo fuzz growth, i.e., elongated half-cylindrical ∼70 nm nanoplatelets, and encapsulated bubbles of 20–45 nm in diameter and preferably within the grain boundaries of sub-micron-sized grains, were observed after 1.3 × 10{sup 24} ions m{sup −2} fluence irradiation. Additionally, a sequential enhancement in the sharpness, density, and protrusions of Mo fuzz at the surface with ion fluence was also observed. Fluence- and flux-dependent studies have also been performed at 1223 K target temperature (beyond the temperature window for Mo fuzz formation). At a constant fluence of 2.6 × 10{sup 24} ions m{sup −2}, 7.2 × 10{sup 20} ions m{sup −2} s{sup −1} flux generates a homogeneous layered and stacked nanodiscs of ∼70 nm diameter. On the other hand, 1.2 × 10{sup 21} ions m{sup −2} s{sup −1} flux generates a combination of randomly patched netlike nanomatrix networked structure, mostly with ∼105 nm nanostructure wall width, various-shaped pores, and self-organized nano arrays. While the observed netlike nanomatrix network structures for 8.6 × 10{sup 24} ions m{sup −2} fluence (at a constant

  17. Tailoring molybdenum nanostructure evolution by low-energy He+ ion irradiation

    International Nuclear Information System (INIS)

    Tripathi, J.K.; Novakowski, T.J.; Hassanein, A.

    2015-01-01

    Mirror-finished polished molybdenum (Mo) samples were irradiated with 100 eV He + ions as a function of ion fluence (using a constant flux of 7.2 × 10 20 ions m −2 s −1 ) at normal incidence and at 923 K. Mo surface deterioration and nanoscopic fiber-form filament (“Mo fuzz”) growth evolution were monitored by using field emission (FE) scanning electron (SEM) and atomic force (AFM) microscopy studies. Those studies confirm a reasonably clean and flat surface, up to several micrometer scales along with a few mechanical-polishing-induced scratches. However, He + ion irradiation deteriorates the surface significantly even at 2.1 × 10 23 ions m −2 fluence (about 5 min. irradiation time) and leads to evolution of homogeneously populated ∼75-nm-long Mo nanograins having ∼8 nm intergrain width. The primary stages of Mo fuzz growth, i.e., elongated half-cylindrical ∼70 nm nanoplatelets, and encapsulated bubbles of 20–45 nm in diameter and preferably within the grain boundaries of sub-micron-sized grains, were observed after 1.3 × 10 24 ions m −2 fluence irradiation. Additionally, a sequential enhancement in the sharpness, density, and protrusions of Mo fuzz at the surface with ion fluence was also observed. Fluence- and flux-dependent studies have also been performed at 1223 K target temperature (beyond the temperature window for Mo fuzz formation). At a constant fluence of 2.6 × 10 24 ions m −2 , 7.2 × 10 20 ions m −2 s −1 flux generates a homogeneous layered and stacked nanodiscs of ∼70 nm diameter. On the other hand, 1.2 × 10 21 ions m −2 s −1 flux generates a combination of randomly patched netlike nanomatrix networked structure, mostly with ∼105 nm nanostructure wall width, various-shaped pores, and self-organized nano arrays. While the observed netlike nanomatrix network structures for 8.6 × 10 24 ions m −2 fluence (at a constant flux of 1.2 × 10 21 ions m −2 s −1 ) is quite similar to those for 2.6 × 10 24 ions m −2

  18. Tailoring molybdenum nanostructure evolution by low-energy He+ ion irradiation

    Science.gov (United States)

    Tripathi, J. K.; Novakowski, T. J.; Hassanein, A.

    2015-10-01

    Mirror-finished polished molybdenum (Mo) samples were irradiated with 100 eV He+ ions as a function of ion fluence (using a constant flux of 7.2 × 1020 ions m-2 s-1) at normal incidence and at 923 K. Mo surface deterioration and nanoscopic fiber-form filament ("Mo fuzz") growth evolution were monitored by using field emission (FE) scanning electron (SEM) and atomic force (AFM) microscopy studies. Those studies confirm a reasonably clean and flat surface, up to several micrometer scales along with a few mechanical-polishing-induced scratches. However, He+ ion irradiation deteriorates the surface significantly even at 2.1 × 1023 ions m-2 fluence (about 5 min. irradiation time) and leads to evolution of homogeneously populated ∼75-nm-long Mo nanograins having ∼8 nm intergrain width. The primary stages of Mo fuzz growth, i.e., elongated half-cylindrical ∼70 nm nanoplatelets, and encapsulated bubbles of 20-45 nm in diameter and preferably within the grain boundaries of sub-micron-sized grains, were observed after 1.3 × 1024 ions m-2 fluence irradiation. Additionally, a sequential enhancement in the sharpness, density, and protrusions of Mo fuzz at the surface with ion fluence was also observed. Fluence- and flux-dependent studies have also been performed at 1223 K target temperature (beyond the temperature window for Mo fuzz formation). At a constant fluence of 2.6 × 1024 ions m-2, 7.2 × 1020 ions m-2 s-1 flux generates a homogeneous layered and stacked nanodiscs of ∼70 nm diameter. On the other hand, 1.2 × 1021 ions m-2 s-1 flux generates a combination of randomly patched netlike nanomatrix networked structure, mostly with ∼105 nm nanostructure wall width, various-shaped pores, and self-organized nano arrays. While the observed netlike nanomatrix network structures for 8.6 × 1024 ions m-2 fluence (at a constant flux of 1.2 × 1021 ions m-2 s-1) is quite similar to those for 2.6 × 1024 ions m-2 fluence, the nanostructure wall width extends up to ∼45

  19. The effect of low energy helium ion irradiation on tungsten-tantalum (W-Ta) alloys under fusion relevant conditions

    Science.gov (United States)

    Gonderman, S.; Tripathi, J. K.; Novakowski, T. J.; Sizyuk, T.; Hassanein, A.

    2017-08-01

    Currently, tungsten remains the best candidate for plasma-facing components (PFCs) for future fusion devices because of its high melting point, low erosion, and strong mechanical properties. However, continued investigation has shown tungsten to undergo severe morphology changes under fusion-like conditions. These results motivate the study of innovative PFC materials which are resistant to surface morphology evolution. The goal of this work is to examine tungsten-tantalum (W-Ta) alloys, a potential PFC material, and their response to low energy helium ion irradiation. Specifically, W-Ta samples are exposed to 100 eV helium irradiations with a flux of 1.15 × 1021 ions m-2 s-1, at 873 K, 1023 K, and 1173 K for 1 h duration. Scanning electron microscopy (SEM) reveals significant changes in surface deterioration due to helium ion irradiation as a function of both temperature and tantalum concentration in W-Ta samples. X-Ray Diffraction (XRD) studies show a slight lattice parameter expansion in W-Ta alloy samples compared to pure W samples. The observed lattice parameter expansion in W-Ta alloy samples (proportional to increasing Ta wt.% concentrations) reflect significant differences observed in the evolution of surface morphology, i.e., fuzz development processes for both increasing Ta wt.% concentration and target temperature. These results suggest a correlation between the observed morphology differences and the induced crystal structure change caused by the presence of tantalum. Shifts in the XRD peaks before and after 100 eV helium irradiation with a flux of 1.15 × 1021 ions m-2 s-1, 1023 K, for 1 h showed a significant difference in the magnitude of the shift. This has suggested a possible link between the atomic spacing of the material and the accumulated damage. Ongoing research is needed on W-Ta alloys and other innovative materials for their application as irradiation resistant materials in future fusion or irradiation environments.

  20. Polymer surfaces graphitization by low-energy He{sup +} ions irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Geworski, A.; Lazareva, I.; Gieb, K.; Koval, Y.; Müller, P. [Department of Physics, Universität Erlangen-Nürnberg, Erwin-Rommel-Str. 1, 91058 Erlangen (Germany)

    2014-08-14

    The electrical and optical properties of surfaces of polyimide and AZ5214e graphitized by low-energy (1 keV) He{sup +} irradiation at different polymer temperatures were investigated. The conductivity of the graphitized layers can be controlled with the irradiation temperature within a broad range and can reach values up to ∼1000 S/cm. We show that the electrical transport in low-conducting samples is governed by thermally activated hopping, while the samples with a high conductivity show a typical semimetallic behavior. The transition from thermally activated to semimetallic conductance governed by the irradiation temperature could also be observed in optical measurements. The semimetallic samples show an unusually high for graphitic materials carrier concentration, which results in a high extinction coefficient in the visible light range. By analyzing the temperature dependence of the conductance of the semimetallic samples, we conclude that the scattering of charge carriers is dominated by Coulomb interactions and can be described by a weak localization model. The transition from a three to two dimensional transport mechanism at low temperatures consistently explains the change in the temperature dependence of the conductance by cooling, observed in experiments.

  1. Temperature-dependent surface modification of Ta due to high-flux, low-energy He+ ion irradiation

    International Nuclear Information System (INIS)

    Novakowski, T.J.; Tripathi, J.K.; Hassanein, A.

    2015-01-01

    This work examines the response of Tantalum (Ta) as a potential candidate for plasma-facing components (PFCs) in future nuclear fusion reactors. Tantalum samples were exposed to high-flux, low-energy He + ion irradiation at different temperatures in the range of 823–1223 K. The samples were irradiated at normal incidence with 100 eV He + ions at constant flux of 1.2 × 10 21 ions m −2  s −1 to a total fluence of 4.3 × 10 24 ions m −2 . An additional Ta sample was also irradiated at 1023 K using a higher ion fluence of 1.7 × 10 25 ions m −2 (at the same flux of 1.2 × 10 21 ions m −2  s −1 ), to confirm the possibility of fuzz formation at higher fluence. This higher fluence was chosen to roughly correspond to the lower fluence threshold of fuzz formation in Tungsten (W). Surface morphology was characterized with a combination of field-emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM). These results demonstrate that the main mode of surface damage is pinholes with an average size of ∼70 nm 2 for all temperatures. However, significantly larger pinholes are observed at elevated temperatures (1123 and 1223 K) resulting from the agglomeration of smaller pinholes. Ex situ X-ray photoelectron spectroscopy (XPS) provides information about the oxidation characteristics of irradiated surfaces, showing minimal exfoliation of the irradiated Ta surface. Additionally, optical reflectivity measurements are performed to further characterize radiation damage on Ta samples, showing gradual reductions in the optical reflectivity as a function of temperature.

  2. A Preliminary Study of the Application of a Model Animal-Caenorhabidity elegans' Exposure to a Low-Energy Ion Irradiation System

    International Nuclear Information System (INIS)

    Liu Xuelan; Cai Kezhou; Feng Huiyun; Xu An; Yuan Hang; Yu Zengliang

    2007-01-01

    Because of the lack of suitable animal models adapted to high vacuum stress in the low-energy ion implantation system, the bio-effects ion irradiation with an energy less than 50 keV on multi-cellular animal individuals have never been investigated so far. The nematode Caenorhabditis elegans has proved to be an excellent animal model used for the study of a broad spectrum of biological issues. The purpose of this work was to investigate the viability of this animal under ion irradiation. We studied the protection effects of glycerol and trehalose on the enhancement of nematodes' ability to bear the vacuum stress. The results showed that the survival of the nematodes was enhanced remarkably under long and slow desiccation, even without glycerol and trehalose. 15% glycerol showed a better anti-vacuum stress effect on the nematodes than trehalose did under short-time desiccation. Low-temperature pre-treatment or post-treatment of the samples had no obvious effect on the survival scored after argon ion irradiation. Moreover, little effect was induced by 15% glycerol- and vacuum-exposure on germ cell apoptosis, compared to the untreated control sample. It issuggested that such treatment would provide relatively low background for genotoxic evaluations with ion irradiation

  3. Tuning the conductivity of vanadium dioxide films on silicon by swift heavy ion irradiation

    Directory of Open Access Journals (Sweden)

    H. Hofsäss

    2011-09-01

    Full Text Available We demonstrate the generation of a persistent conductivity increase in vanadium dioxide thin films grown on single crystal silicon by irradiation with 1 GeV 238U swift heavy ions at room temperature. VO2 undergoes a temperature driven metal-insulator-transition (MIT at 67 °C. After room temperature ion irradiation with high electronic energy loss of 50 keV/nm the conductivity of the films below the transition temperature is strongly increased proportional to the ion fluence of 5·109 U/cm2 and 1·1010 U/cm2. At high temperatures the conductivity decreases slightly. The ion irradiation slightly reduces the MIT temperature. This observed conductivity change is persistent and remains after heating the samples above the transition temperature and subsequent cooling. Low temperature measurements down to 15 K show no further MIT below room temperature. Although the conductivity increase after irradiation at such low fluences is due to single ion track effects, atomic force microscopy (AFM measurements do not show surface hillocks, which are characteristic for ion tracks in other materials. Conductive AFM gives no evidence for conducting ion tracks but rather suggests the existence of conducting regions around poorly conducting ion tracks, possible due to stress generation. Another explanation of the persistent conductivity change could be the ion-induced modification of a high resistivity interface layer formed during film growth between the vanadium dioxide film and the n-Silicon substrate. The swift heavy ions may generate conducting filaments through this layer, thus increasing the effective contact area. Swift heavy ion irradiation can thus be used to tune the conductivity of VO2 films on silicon substrates.

  4. Investigations of structural, dielectric and optical properties on silicon ion irradiated glycine monophosphate single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Kanagasekaran, T. [Department of Physics, Anna University, Chennai 600 025 (India); Department of Physics and Astrophysics, University of Delhi, New Delhi 110 007 (India); Mythili, P. [Department of Physics, Anna University, Chennai 600 025 (India); Bhagavannarayana, G. [Materials Characterization Division, National Physical Laboratory, New Delhi 110012 (India); Kanjilal, D. [Inter University Accelerator Centre, New Delhi 110 067 (India); Gopalakrishnan, R. [Department of Physics, Anna University, Chennai 600 025 (India)], E-mail: krgkrishnan@annauniv.edu

    2009-08-01

    The 50 MeV silicon ion irradiation induced modifications on structural, optical and dielectric properties of solution grown glycine monophosphate (GMP) crystals were studied. The high-resolution X-ray diffraction study shows the unaltered value of integrated intensity on irradiation. The dielectric constant as a function of frequency and temperature was studied. UV-visible studies reveal the decrease in bandgap values on irradiation and presence of F-centers. The fluorescence spectrum shows the existence of some energy levels, which remains unaffected after irradiation. The scanning electron micrographs reveal the defects formed on irradiation.

  5. Temperature-dependent surface porosity of Nb{sub 2}O{sub 5} under high-flux, low-energy He{sup +} ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Novakowski, T.J., E-mail: tnovakow@purdue.edu; Tripathi, J.K.; Hosinski, G.M.; Joseph, G.; Hassanein, A.

    2016-01-30

    Graphical abstract: - Highlights: • Nb{sub 2}O{sub 5} surfaces are nanostructured with a novel He{sup +} ion irradiation process. • High-flux, low energy He{sup +} ion irradiation generates highly porous surfaces. • Top-down approach guarantees good contact between different crystallites. • Sample annealing demonstrates temperature effect on surface morphology. • Surface pore diameter increases with increasing temperature. - Abstract: The present study reports on high-flux, low-energy He{sup +} ion irradiation as a novel method of enhancing the surface porosity and surface area of naturally oxidized niobium (Nb). Our study shows that ion-irradiation-induced Nb surface micro- and nano-structures are highly tunable by varying the target temperature during ion bombardment. Mirror-polished Nb samples were irradiated with 100 eV He{sup +} ions at a flux of 1.2 × 10{sup 21} ions m{sup −2} s{sup −1} to a total fluence of 4.3 × 10{sup 24} ions m{sup −2} with simultaneous sample annealing in the temperature range of 773–1223 K to demonstrate the influence of sample temperature on the resulting Nb surface morphology. This surface morphology was primarily characterized using field-emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM). Below 923 K, Nb surfaces form nano-scale tendrils and exhibit significant increases in surface porosity. Above 923 K, homogeneously populated nano-pores with an average diameter of ∼60 nm are observed in addition to a smaller population of sub-micron sized pores (up to ∼230 nm in diameter). Our analysis shows a significant reduction in surface pore number density and surface porosity with increasing sample temperature. High-resolution ex situ X-ray photoelectron spectroscopy (XPS) shows Nb{sub 2}O{sub 5} phase in all of the ion-irradiated samples. To further demonstrate the length scales in which radiation-induced surface roughening occurs, optical reflectivity was performed over a spectrum of

  6. SiO2 on silicon: behavior under heavy ion irradiation

    International Nuclear Information System (INIS)

    Rotaru, C.

    2004-03-01

    Heavy ion irradiation was performed on a-SiO 2 layers deposited on Si. Damage of the surface was studied by means of Atomic Force Microscopy. Hillocks appear for an electronic stopping power higher than 16 keV/nm. The height of the hillocks decreases with the thickness of the oxide layer. Infrared Spectroscopy studies show that the damage threshold for a-SiO 2 is at an electronic stopping power of 2 keV/nm. Therefore it is probable that the origin of the hillocks comes from the silicon layer. This could be explain within the frame of thermal spike model. The theoretical thresholds are 8 keV/nm and 1.8 keV/nm for silicon and a-SiO 2 respectively. Chemical etching after irradiation gives a technical possibility to create nano-pits, whose size and shape can be controlled. Additionally, these structures allowed to determine the AFM tip radius. (author)

  7. Capillaric penetration of etchant solution into swift heavy ion-irradiated silicone rubber

    International Nuclear Information System (INIS)

    Fink, D.; Mueller, M.

    2000-01-01

    There is growing evidence that etchants penetrate into latent ion tracks in polymers from the very beginning, i.e., even during the so-called 'incubation time' when no visible etchant attack is observed. The model of capillaric penetration of viscous liquids into sponge-like matter agrees with experimental values both in their parametric dependence as in the absolute values. Our experiments are based on LiOH etching of both pristine and swift heavy ion-irradiated silicone rubber foils. About five times more etchant penetrates into irradiated than into pristine silicone rubber. The overall etchant penetration is highest in tracks parallel to the surface normal, and decreases with increasing ion track tilt angle towards the surface normal. The etchant penetration into the tracks proceeds relatively slowly with an effective viscosity comparable to that of heavy machine oil. When swelling starts to predominate, the maximum etchant penetration depth comes to saturation, with the total etchant uptake even decreasing

  8. CoSi2 growth on Si(001) by reactive deposition epitaxy: Effects of high-flux, low-energy ion irradiation

    International Nuclear Information System (INIS)

    Lim, C. W.; Greene, J. E.; Petrov, I.

    2006-01-01

    CoSi 2 layers, CoSi 2 (parallel sign)(001) Si and [100] CoSi 2 (parallel sign)[100] Si , contain fourfold symmetric (111) twinned domains oriented such that (221) CoSi 2 (parallel sign)(001) Si and CoSi 2 (parallel sign)[110] Si . We demonstrate that high-flux low-energy (E Ar + =9.6 eV) Ar + ion irradiation during deposition dramatically increases the area fraction f u of untwinned regions from 0.17 in films grown under standard magnetically balanced conditions in which the ratio J Ar + /J Co of the incident Ar + to Co fluxes is 1.4 to 0.72 with J Ar + /J Co =13.3. TEM analyses show that the early stages of RDE CoSi 2 (001) film growth proceed via the Volmer-Weber mode with independent nucleation of both untwinned and twinned islands. Increasing J Ar + /J Co results in larger values of both the number density and area of untwinned with respect to twinned islands. The intense Ar + ion bombardment creates additional low-energy adsorption sites that favor the nucleation of untwinned islands while collisionally enhancing Co surface mobilities which, in turn, increases the probability of itinerant Co adatoms reaching these sites

  9. FTIR studies of swift silicon and oxygen ion irradiated porous silicon

    International Nuclear Information System (INIS)

    Bhave, Tejashree M.; Hullavarad, S.S.; Bhoraskar, S.V.; Hegde, S.G.; Kanjilal, D.

    1999-01-01

    Fourier Transform Infrared Spectroscopy has been used to study the bond restructuring in silicon and oxygen irradiated porous silicon. Boron doped p-type (1 1 1) porous silicon was irradiated with 10 MeV silicon and a 14 MeV oxygen ions at different doses ranging between 10 12 and 10 14 ions cm -2 . The yield of PL in porous silicon irradiated samples was observed to increase considerably while in oxygen irradiated samples it was seen to improve only by a small extent for lower doses whereas it decreased for higher doses. The results were interpreted in view of the relative intensities of the absorption peaks associated with O-Si-H and Si-H stretch bonds

  10. A simulation of low energy channeling of protons in silicon

    International Nuclear Information System (INIS)

    Sabin, J.R.

    1994-01-01

    The authors present early results from the CHANNEL code, which simulates the passage of ionized projectiles through bulk solids. CHANNEL solves the classical equations of motion for the projectile using the force obtained from the gradient of the quantum mechanically derived coulombic potential of the solid (determined via a full potential augmented plane wave FLAPW calculation on the bulk) and a quantum mechanical energy dissipation term, the stopping power, as determined from the local electron density, using the method of Echenique, Nieminen, and Ritchie. The code then generates the trajectory of the ionic projectile for a given initial velocity and a given incident position on the unit cell face. For each incident projectile velocity, the authors generate trajectories for incidence distributed over the channel face. The distribution of ranges generates an implantation profile. In this paper, they report ion (proton) implantation profiles for low energy protons with initial velocity along the (100) and (110) channel directions of diamond structured Silicon

  11. Tuning the antiferromagnetic to ferromagnetic phase transition in FeRh thin films by means of low-energy/low fluence ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Heidarian, A.; Bali, R.; Grenzer, J.; Wilhelm, R.A.; Heller, R.; Yildirim, O.; Lindner, J.; Potzger, K.

    2015-09-01

    Ion irradiation induced modifications of the thermomagnetic properties of equiatomic FeRh thin films have been investigated. The application of 20 keV Ne{sup +} ions at different fluencies leads to broadening of the antiferromagnetic to ferromagnetic phase transition as well as a shift of the transition temperature towards lower temperatures with increasing ion fluence. Moreover, the ferromagnetic background at low temperatures generated by the ion irradiation leads to pronounced saturation magnetisation at 5 K. Complete erasure of the transition, i.e. ferromagnetic ordering through the whole temperature regime was achieved at a Ne{sup +} fluence of 3 × 10{sup 14} ions/cm{sup 2}. It does not coincide with the complete randomization of the chemical ordering of the crystal lattice.

  12. Structural, thermal and optical behavior of 84 MeV oxygen and 120 MeV silicon ions irradiated PES

    International Nuclear Information System (INIS)

    Samra, Kawaljeet Singh; Thakur, Sonika; Singh, Lakhwant

    2011-01-01

    In order to study structural, thermal and optical behavior, thin flat samples of polyethersulfone were irradiated with oxygen and silicon ions. The changes in properties were analyzed using different techniques viz: X-ray diffraction, thermo-gravimetric analysis, Fourier transform infrared, UV-visible and photoluminescence spectroscopy. A noticeable increase in the intensity of X-ray diffraction peaks was observed after irradiation with 84 MeV oxygen ions at low and medium fluences, which may be attributed to radiation-induced cross-linking in polymer. Fourier transform infrared and thermo-gravimetric analysis corroborated the results of X-ray diffraction analysis. No noticeable change in the Fourier transform infrared spectra of oxygen ion irradiated polyethersulfone were observed even at the highest fluence of 1 x 10 13 ions cm -2 , but after irradiation with silicon ions, a reduction in intensity of almost all characteristic bands was revealed. An increase in the activation energy of decomposition of polyethersulfone was observed after irradiation with 84 MeV oxygen ions up to medium fluences but degradation was revealed at higher fluences. Similar trends were observed by photoluminescence analysis.

  13. Low-energy-consumption hybrid lasers for silicon photonics

    DEFF Research Database (Denmark)

    Chung, Il-Sug; Ran, Qijiang; Mørk, Jesper

    2012-01-01

    Physics and characteristics of a hybrid vertical-cavity laser that can be an on-chip Si light source with high speed and low energy consumption are discussed.......Physics and characteristics of a hybrid vertical-cavity laser that can be an on-chip Si light source with high speed and low energy consumption are discussed....

  14. Mass transfer in silicon at deposition of Ti thin films assisted by self ion irradiation

    International Nuclear Information System (INIS)

    Mikhalkovich, O.M.; Tashlykov, I.S.; Gusakov, V.E.

    2011-01-01

    In this paper a composite structure, processes of diffusion in Si, modified by means of ion-assisted deposition of coatings in conditions of a self-irradiation are discussed. Rutherford backscattering in combination with a channelling (RBS/Ch) of He + ions and computer program RUMP were applied to investigate an element composition. It is established, that coatings include atoms of metal, hydrogen, carbon, oxygen, silicon. The interstitial Si atoms, generated by radiation effect, diffuse during deposition of thin coating, both in a depth of a wafers, and in coatings. The influence of irradiation of ions Xe+ on diffusion processes in silicon are revealed. (authors)

  15. Heavy-ion irradiation effects on passivated implanted planar silicon detectors

    International Nuclear Information System (INIS)

    Coster, W. de; Brijs, B.; Vandervorst, W.; Burger, P.

    1992-01-01

    Commercially available p + nn + passivated implanted planar silicon detectors have been shown to be very performing for standard RBS-analysis with 4 He beams. Lifetimes are found to range up till >10 9 particles. The end of lifetime occurs concurrent with internal breakdown of the detector. Inverted n + np + detectors where the junction is located well outside the damage region, are expected to be less sensitive to the radiation damage and to have a higher lifetime. In the present paper the characteristics for heavy-ion detection of both types of detector are investigated and discussed upon. (orig.)

  16. Self-organizing nanodot structures on InP surfaces evolving under low-energy ion irradiation: analysis of morphology and composition.

    Science.gov (United States)

    Radny, Tobias; Gnaser, Hubert

    2014-01-01

    Surfaces of InP were bombarded by 1.9 keV Ar(+) ions under normal incidence. The total accumulated ion fluence Φ the samples were exposed to was varied from 1 × 10(17) cm(-2) to 3 × 10(18) cm(-2), and ion fluxes f of (0.4 - 2) × 10(14) cm(-2) s(-1) were used. The surface morphology resulting from these ion irradiations was examined by atomic force microscopy (AFM). Generally, nanodot structures are formed on the surface; their dimensions (diameter, height and separation), however, were found to depend critically on the specific bombardment conditions. As a function of ion fluence, the mean radius r, height h, and spacing l of the dots can be fitted by power-law dependences: r ∝ Φ(0.40), h ∝ Φ(0.48), and l ∝ Φ(0.19). In terms of ion flux, there appears to exist a distinct threshold: below f ~ (1.3 ± 0.2) × 10(14) cm(-2) s(-1), no ordering of the dots exists and their size is comparatively small; above that value of f, the height and radius of the dots becomes substantially larger (h ~ 40 nm and r ~ 50 nm). This finding possibly indicates that surface diffusion processes could be important. In order to determine possible local compositional changes in these nanostructures induced by ion impact, selected samples were prepared for atom probe tomography (APT). The results indicate that APT can provide analytical information on the composition of individual InP nanodots. By means of 3D APT data, the surface region of such nanodots evolving under ion bombardment could be examined with atomic spatial resolution. At the InP surface, the values of the In/P concentration ratio are distinctly higher over a distance of approximately 1 nm and amount to 1.3 to 1.7.

  17. Etching kinetics of swift heavy ion irradiated silicone rubber with insoluble additives or reaction products

    International Nuclear Information System (INIS)

    Fink, D.; Mueller, M.; Petrov, A.; Farenzena, L.; Behar, M.; Papaleo, R.P.

    2003-01-01

    It is normally understood as a basic precondition of the etching of swift heavy ion tracks in polymers that both the additives and etching products are soluble in the etchant. If this is not given, the polymer surface may be gradually blocked by the deposition of the insoluble material that acts as a diffusion barrier for the penetration of fresh etchant into the tracks, and therefore the effective track etching speed will gradually be reduced. The etching kinetics is developed for that case, and the theory is compared with first experimental findings. For that purpose we have taken commercial silicone rubber foils as test materials, that were irradiated with GeV heavy ions through a mask at a fluence that corresponds to the onset of track overlapping. After etching with NaOH, the corresponding etching speed was recorded via the reduction of the foil thickness. The etching speed is seen to decrease with exposure time, in parallel to the development of an insoluble surface layer. It is discussed how to prevent that surface blocking, to maintain a high etching speed

  18. Coupled electronic and atomic effects on defect evolution in silicon carbide under ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Yanwen [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Xue, Haizhou [Univ. of Tennessee, Knoxville, TN (United States); Zarkadoula, Eva [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Sachan, Ritesh [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Army Research Office, Triangle Park, NC (United States); Ostrouchov, Christopher [Univ. of Tennessee, Knoxville, TN (United States); Liu, Peng [Univ. of Tennessee, Knoxville, TN (United States); Shandong Univ., Jinan (China); Wang, Xue -lin [Shandong Univ., Jinan (China); Zhang, Shuo [Lanzhou Univ., Gansu Province (China); Wang, Tie Shan [Lanzhou Univ., Gansu Province (China); Weber, William J. [Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2017-10-16

    Understanding energy dissipation processes in electronic/atomic subsystems and subsequent non-equilibrium defect evolution is a long-standing challenge in materials science. In the intermediate energy regime, energetic particles simultaneously deposit a significant amount of energy to both electronic and atomic subsystems of silicon carbide (SiC). Here we show that defect evolution in SiC closely depends on the electronic-to-nuclear energy loss ratio (Se/Sn), nuclear stopping powers (dE/dxnucl), electronic stopping powers (dE/dxele), and the temporal and spatial coupling of electronic and atomic subsystem for energy dissipation. The integrated experiments and simulations reveal that: (1) increasing Se/Sn slows damage accumulation; (2) the transient temperatures during the ionization-induced thermal spike increase with dE/dxele, which causes efficient damage annealing along the ion trajectory; and (3) for more condensed displacement damage within the thermal spike, damage production is suppressed due to the coupled electronic and atomic dynamics. Ionization effects are expected to be more significant in materials with covalent/ionic bonding involving predominantly well-localized electrons. Here, insights into the complex electronic and atomic correlations may pave the way to better control and predict SiC response to extreme energy deposition

  19. Structuring of silicon with low energy focused ion beams

    Energy Technology Data Exchange (ETDEWEB)

    Nebiker, P.W.; Doebeli, M. [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Muehle, R. [Eidgenoessische Technische Hochschule, Zurich (Switzerland)

    1997-09-01

    The defect production in silicon induced by focused ion beam irradiation as a function of energy and projectile mass has been investigated and compared to the measured sputter yield. The aim was to find optimal beam parameters for the structuring of semiconductors with a minimum amount of defects produced per removed atom. (author) 2 figs., 2 refs.

  20. Low energy production processes in manufacturing of silicon solar cells

    Science.gov (United States)

    Kirkpatrick, A. R.

    1976-01-01

    Ion implantation and pulsed energy techniques are being combined for fabrication of silicon solar cells totally under vacuum and at room temperature. Simplified sequences allow very short processing times with small process energy consumption. Economic projections for fully automated production are excellent.

  1. Low energy pion detection by a silicon surface barrier telescope

    International Nuclear Information System (INIS)

    Sealock, R.M.; Caplan, H.S.; Leung, M.K.

    1978-01-01

    Four telescopes of three (2-ΔE, 1-E) silicon surface barrier detectors each, mounted in the focal plane of a magnetic spectrometer, have been used to detect positive pions in the energy range from 4.7-17.9 MeV and negative pions from 14.1-17.9 MeV. Positive pions from 4.7-12.7 MeV were stopped in the third detector while positive and negative pions from 14.1-17.9 MeV were detected in transmission. For energies greater than 7.4 MeV aluminum moderators were placed in front of the first detector to degrade the pion energy. Energy spectra show well resolved pion peaks with extremely low background. Double differential cross sections for the 12 C(e,π + ) 12 B,e' reaction have been measured. (Auth.)

  2. Silicon passivation study under low energy electron irradiation conditions

    International Nuclear Information System (INIS)

    Cluzel, R.

    2010-01-01

    Backside illuminated thinned CMOS (Complementary Metal Oxide Semiconductor) imaging system is a technology developed to increase the signal to noise ratio and the sensibility of such sensors. This configuration is adapted to the electrons detection from the energy range of [1 - 12 keV]. The impinging electron creates by multiplication several hundreds of secondary electrons close to the surface. A P ++ highly-doped passivation layer of the rear face is required to reduce the secondary electron surface recombination rate. Thanks to the potential barrier induced by the P ++ layer, the passivation layer increases the collected charges number and so the sensor collection gain. The goal of this study is to develop some experimental methods in order to determine the effect of six different passivation processes on the collection gain. Beforehand, the energy profile deposited by an incident electron is studied with the combination of Monte-Carlo simulations and some analytical calculations. The final collection gain model shows that the mirror effect from the passivation layer is a key factor at high energies whereas the passivation layer has to be as thin as possible at low energies. A first experimental setup which consists in irradiating P ++ /N large diodes allows to study the passivation process impacts on the surface recombinations. Thanks to a second setup based on a single event upset directly on thinned CMOS sensor, passivation techniques are discriminated in term of mirror effect and the implied spreading charges. The doping atoms activation laser annealing is turn out to be a multiplication gain inhomogeneity source impacting directly the matrix uniformity. (author)

  3. Spontaneously-acoustic hypersound long-range stimulation of silicon nitride synthesis in silicon at argon ion irradiation

    CERN Document Server

    Demidov, E S; Markov, K A; Sdobnyakov, V V

    2001-01-01

    The work is dedicated to the nature of the average energy ions implantation process effect on the crystal defective system at the distances, exceeding by three-four orders the averagely projected ions run value. It is established that irradiation by the argon ions stimulated the Si sub 3 N sub 4 phase formation in the preliminarily nitrogen-saturated layers at the distances of approximately 600 mu m from the ions deceleration zone. It is supposed that there appear sufficiently effective pulse sources of the hypersonic shock waves in the area of the Ar sup + deceleration zone. These waves are the result of the jump-like origination and grid evolution of the loop-shaped dislocations and argon blisters as well as of the blisters explosion, The evaluations show that the peak pressure in wave due to the synchronized explosion of blisters in the nitrogen-saturated area on the reverse side of the silicon plate 600 mu m thick may exceed 10 sup 8 Pa and cause experimentally observed changes

  4. Low-energy nuclear physics with high-segmentation silicon arrays

    International Nuclear Information System (INIS)

    Betts, R.R.; Univ. of Illinois, Chicago, IL

    1994-01-01

    A brief history is given of silicon detectors leading up to the development of ion-implanted strip detectors. Two examples of their use in low energy nuclear physics are discussed; the search for exotic alpha-chain states in 24 Mg and studies of anomalous positron-electron pairs produced in collisions of very heavy ions

  5. Defect generation/passivation by low energy hydrogen implant for silicon solar cells

    International Nuclear Information System (INIS)

    Sopori, B.L.; Zhou, T.Q.; Rozgonyi, G.A.

    1990-01-01

    Low energy ion implant is shown to produce defects in silicon. These defects include surface damage, hydrogen agglomeration, formation of platelets with (111) habit plane and decoration of dislocations. Hydrogen also produces an inversion type of surface on boron doped silicon. These effects indicate that a preferred approach for passivation is to incorporate hydrogen from the back side of the cell. A backside H + implant technique is described. The results show that degree of passivation differs for various devices. A comparison of the defect structures of hydrogenated devices indicates that the structure and the distribution of defects in the bulk of the material plays a significant role in determining the degree of passivation

  6. Growth and intercalation of graphene on silicon carbide studied by low-energy electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Speck, Florian; Ostler, Markus; Wanke, Martina; Seyller, Thomas [Universitaet Erlangen-Nuernberg, Lehrstuhl fuer Technische Physik, Erlangen (Germany); Technische Universitaet Chemnitz, Institut fuer Physik (Germany); Besendoerfer, Sven [Universitaet Erlangen-Nuernberg, Lehrstuhl fuer Technische Physik, Erlangen (Germany); Krone, Julia [Technische Universitaet Chemnitz, Institut fuer Physik (Germany)

    2017-11-15

    Based on its electronic, structural, chemical, and mechanical properties, many potential applications have been proposed for graphene. In order to realize these visions, graphene has to be synthesized, grown, or exfoliated with properties that are determined by the targeted application. Growth of so-called epitaxial graphene on silicon carbide by sublimation of silicon in an argon atmosphere is one particular method that could potentially lead to electronic applications. In this contribution we summarize our recent work on different aspects of epitaxial graphene growth and interface manipulation by intercalation, which was performed by a combination of low-energy electron microscopy, low-energy electron diffraction, atomic force microscopy and photoelectron spectroscopy. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. SiO{sub 2} on silicon: behavior under heavy ion irradiation; SiO{sub 2} sur silicium: comportement sous irradiation avec des ions lourds

    Energy Technology Data Exchange (ETDEWEB)

    Rotaru, C

    2004-03-15

    Heavy ion irradiation was performed on a-SiO{sub 2} layers deposited on Si. Damage of the surface was studied by means of Atomic Force Microscopy. Hillocks appear for an electronic stopping power higher than 16 keV/nm. The height of the hillocks decreases with the thickness of the oxide layer. Infrared Spectroscopy studies show that the damage threshold for a-SiO{sub 2} is at an electronic stopping power of 2 keV/nm. Therefore it is probable that the origin of the hillocks comes from the silicon layer. This could be explain within the frame of thermal spike model. The theoretical thresholds are 8 keV/nm and 1.8 keV/nm for silicon and a-SiO{sub 2} respectively. Chemical etching after irradiation gives a technical possibility to create nano-pits, whose size and shape can be controlled. Additionally, these structures allowed to determine the AFM tip radius. (author)

  8. Oxidation-enhanced diffusion of boron in very low-energy N2+-implanted silicon

    Science.gov (United States)

    Skarlatos, D.; Tsamis, C.; Perego, M.; Fanciulli, M.

    2005-06-01

    In this article we study the interstitial injection during oxidation of very low-energy nitrogen-implanted silicon. Buried boron δ layers are used to monitor the interstitial supersaturation during the oxidation of nitrogen-implanted silicon. No difference in boron diffusivity enhancement was observed compared to dry oxidation of nonimplanted samples. This result is different from our experience from N2O oxynitridation study, during which a boron diffusivity enhancement of the order of 20% was observed, revealing the influence of interfacial nitrogen on interstitial kinetics. A possible explanation may be that implanted nitrogen acts as an excess interstitial sink in order to diffuse towards the surface via a non-Fickian mechanism. This work completes a wide study of oxidation of very low-energy nitrogen-implanted silicon related phenomena we performed within the last two years [D. Skarlatos, C. Tsamis, and D. Tsoukalas, J. Appl. Phys. 93, 1832 (2003); D. Skarlatos, E. Kapetanakis, P. Normand, C. Tsamis, M. Perego, S. Ferrari, M. Fanciulli, and D. Tsoukalas, J. Appl. Phys. 96, 300 (2004)].

  9. Structural and optical modification in 4H-SiC following 30 keV silver ion irradiation

    Science.gov (United States)

    Kaushik, Priya Darshni; Aziz, Anver; Siddiqui, Azher M.; Lakshmi, G. B. V. S.; Syväjärvi, Mikael; Yakimova, Rositsa; Yazdi, G. Reza

    2018-05-01

    The market of high power, high frequency and high temperature based electronic devices is captured by SiC due to its superior properties like high thermal conductivity and high sublimation temperature and also due to the limitation of silicon based electronics in this area. There is a need to investigate effect of ion irradiation on SiC due to its application in outer space as outer space is surrounded both by low and high energy ion irradiations. In this work, effect of low energy ion irradiation on structural and optical property of 4H-SiC is investigated. ATR-FTIR is used to study structural modification and UV-Visible spectroscopy is used to study optical modifications in 4H-SiC following 30 keV Ag ion irradiation. FTIR showed decrease in bond density of SiC along the ion path (track) due to the creation of point defects. UV-Visible absorption spectra showed decrease in optical band gap from 3.26 eV to 2.9 eV. The study showed degradation of SiC crystallity and change in optical band gap following low energy ion irradiation and should be addressed while fabricationg devices based on SiC for outer space application. Additionally, this study provides a platform for introducing structural and optical modification in 4H-SiC using ion beam technology in a controlled manner.

  10. Defect diffusion during annealing of low-energy ion-implanted silicon

    International Nuclear Information System (INIS)

    Bedrossian, P.J.; Caturla, M.J.; Diaz de la Rubia, T.

    1997-01-01

    The authors present a new approach for investigating the kinetics of defect migration during annealing of low-energy, ion-implanted silicon, employing a combination of computer simulations and atomic-resolution tunneling microscopy. Using atomically-clean Si(111)-7 x 7 as a sink for bulk point defects created by 5 keV Xe and Ar irradiation, they observe distinct, temperature-dependent surface arrival rates for vacancies and interstitials. A combination of simulation tools provides a detailed description of the processes that underlie the observed temperature-dependence of defect segregation, and the predictions of the simulations agree closely with the experimental observations

  11. Deposition of silicon oxynitride films by low energy ion beam assisted nitridation at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Youroukov, S; Kitova, S; Danev, G [Central Laboratory of Photoprocesses, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl. 109, 113 Sofia (Bulgaria)], E-mail: skitova@clf.bas.bg

    2008-05-01

    The possibility is studied of growing thin silicon oxynitride films by e-gun evaporation of SiO and SiO{sub 2} together with concurrent bombardment with low energy N{sub 2}{sup +} ions from a cyclotron resonance (ECR) source at room temperature of substrates. The degree of nitridation and oxidation of the films is investigated by means of X-ray spectroscopy. The optical characteristics of the films, their environmental stability and adhesion to different substrates are examined. The results obtained show than the films deposited are transparent. It is found that in the case of SiO evaporation with concurrent N{sub 2}{sup +} ion bombardment, reactive implantation of nitrogen within the films takes place at room temperature of the substrate with the formation of a new silicon oxynitride compound even at low ion energy (150-200 eV)

  12. Deposition of silicon oxynitride films by low energy ion beam assisted nitridation at room temperature

    Science.gov (United States)

    Youroukov, S.; Kitova, S.; Danev, G.

    2008-05-01

    The possibility is studied of growing thin silicon oxynitride films by e-gun evaporation of SiO and SiO2 together with concurrent bombardment with low energy N2+ ions from a cyclotron resonance (ECR) source at room temperature of substrates. The degree of nitridation and oxidation of the films is investigated by means of X-ray spectroscopy. The optical characteristics of the films, their environmental stability and adhesion to different substrates are examined. The results obtained show than the films deposited are transparent. It is found that in the case of SiO evaporation with concurrent N2+ ion bombardment, reactive implantation of nitrogen within the films takes place at room temperature of the substrate with the formation of a new silicon oxynitride compound even at low ion energy (150-200 eV).

  13. Tribology of silicon-thin-film-coated SiC ceramics and the effects of high energy ion irradiation

    International Nuclear Information System (INIS)

    Kohzaki, Masao; Noda, Shoji; Doi, Harua

    1990-01-01

    The sliding friction coefficients and specific wear of SiC ceramics coated with a silicon thin film (Si/SiC) with and without subsequent Ar + irradiation against a diamond pin were measured with a pin-on-disk tester at room temperature in laboratory air of approximately 50% relative humidity without oil lubrication for 40 h. The friction coefficient of Ar + -irradiated Si/SiC was about 0.05 with a normal load of 9.8 N and remained almost unchanged during the 40 h test, while that of SiC increased from 0.04 to 0.12 during the test. The silicon deposition also reduced the specific wear of SiC to less than one tenth of that of the uncoated SiC. Effectively no wear was detected in Si/SiC irradiated to doses of over 2x10 16 ions cm -2 . (orig.)

  14. Low-energy ion beam synthesis of Ag endotaxial nanostructures in silicon

    Science.gov (United States)

    Nagarajappa, Kiran; Guha, Puspendu; Thirumurugan, Arun; Satyam, Parlapalli V.; Bhatta, Umananda M.

    2018-06-01

    Coherently, embedded metal nanostructures (endotaxial) are known to have potential applications concerning the areas of plasmonics, optoelectronics and thermoelectronics. Incorporating appropriate concentrations of metal atoms into crystalline silicon is critical for these applications. Therefore, choosing proper dose of low-energy ions, instead of depositing thin film as a source of metal atoms, helps in avoiding surplus concentration of metal atoms that diffuses into the silicon crystal. In this work, 30 keV silver negative ions are implanted into a SiO x /Si(100) at two different fluences: 1 × 1015 and 2.5 × 1015 Ag- ions/cm2. Later, the samples are annealed at 700 °C for 1 h in Ar atmosphere. Embedded silver nanostructures have been characterized using planar and cross-sectional TEM (XTEM) analysis. Planar TEM analysis shows the formation of mostly rectangular silver nanostructures following the fourfold symmetry of the substrate. XTEM analysis confirms the formation of prism-shaped silver nanostructures embedded inside crystalline silicon. Endotaxial nature of the embedded crystals has been discussed using selected area electron diffraction analysis.

  15. Electronic structure of xenon implanted with low energy in amorphous silicon

    International Nuclear Information System (INIS)

    Barbieri, P.F.; Landers, R.; Oliveira, M.H. de; Alvarez, F.; Marques, F.C.

    2007-01-01

    Electronic structure of Xe implanted in amorphous silicon (a-Si) films are investigated. Xe atoms were implanted with low energy by ion beam assisted deposition (IBAD) technique during growth of the a-Si films. The Xe implantation energy varied in the 0-300 eV energy range. X-ray photoelectron spectroscopy (XPS), X-ray Auger excited spectroscopy (XAES) and X-ray absorption spectroscopy (XAS) were used for investigating the Xe electronic structure. The Xe M 4 N 45 N 45 transitions were measured to extract the Auger parameter and to analyze the initial state and relaxation contributions. It was found that the binding energy variation is mainly due to initial state contribution. The relaxation energy variation also shows that the Xe trapped environment depends on the implantation energy. XAS measurements reveals that Xe atoms are dispersed in the a-Si matrix

  16. Capabilities of silicon Shottki barriers and planar detectors in low-energy proton spectometry

    Energy Technology Data Exchange (ETDEWEB)

    Verbitskaya, E M; Eremin, V K; Malyarenko, A M; Sakharov, V I; Serenkov, I T; Strokan, N B; Sukhanov, V L

    1987-05-12

    Dependence of the resolution of surface barrier and planar diffusion silicon detectors on proton energy is investigated. The experiment was conducted at the device, representing the double mass spectrometer with the maximal energy of single-charged ions up to 200 keV. Two advantages of using planar diffusion detectors for light low-energy ion spectrometry is established: high energy resolution and independence of signal amplitude of bias voltage. Background noise represents the main factor dictaiting resolution, but fluctuations of losses in input window are sufficient as well. It was concluded that planar detector application for spectrometry of protons with energy of less than 200 keV would improve the resolution up to 2.2 keV without detector cooling.

  17. Effect of low-energy hydrogen ion implantation on dendritic web silicon solar cells

    Science.gov (United States)

    Rohatgi, A.; Meier, D. L.; Rai-Choudhury, P.; Fonash, S. J.; Singh, R.

    1986-01-01

    The effect of a low-energy (0.4 keV), short-time (2-min), heavy-dose (10 to the 18th/sq cm) hydrogen ion implant on dendritic web silicon solar cells and material was investigated. Such an implant was observed to improve the cell open-circuit voltage and short-circuit current appreciably for a number of cells. In spite of the low implant energy, measurements of internal quantum efficiency indicate that it is the base of the cell, rather than the emitter, which benefits from the hydrogen implant. This is supported by the observation that the measured minority-carrier diffusion length in the base did not change when the emitter was removed. In some cases, a threefold increase of the base diffusion length was observed after implantation. The effects of the hydrogen implantation were not changed by a thermal stress test at 250 C for 111 h in nitrogen. It is speculated that hydrogen enters the bulk by traveling along dislocations, as proposed recently for edge-defined film-fed growth silicon ribbon.

  18. Tuning of the optical properties of In-rich In{sub x}Ga{sub 1−x}N (x=0.82−0.49) alloys by light-ion irradiation at low energy

    Energy Technology Data Exchange (ETDEWEB)

    De Luca, Marta; Polimeni, Antonio; Capizzi, Mario [Dipartimento di Fisica, Sapienza Università di Roma, P.le A. Moro 2, 00185 Roma (Italy); Pettinari, Giorgio [School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom); Ciatto, Gianluca; Fonda, Emiliano [Synchrotron SOLEIL, L' Orme des Merisiers, Saint-Aubin, BP 48, 91192 Gif sur Yvette Cedex (France); Amidani, Lucia; Boscherini, Federico [Department of Physics and CNISM, University of Bologna, V. le C. Berti Pichat 6/2, 40127 Bologna (Italy); Filippone, Francesco; Bonapasta, Aldo Amore [CNR-Istituto di Struttura della Materia (ISM), Via Salaria Km 29.5, CP 10, I-00016 Monterotondo Stazione (Italy); Knübel, Andreas; Cimalla, Volker; Ambacher, Oliver [Fraunhofer Institute for Applied Solid State Physics, Tullastr. 72, 79108 Freiburg (Germany); Giubertoni, Damiano; Bersani, Massimo [CMM - Fondazione Bruno Kessler, Trieste, via Sommarive 18, 38100, Povo Trento (Italy)

    2013-12-04

    The effects of low-energy irradiation by light ions (H and He) on the properties of In-rich In{sub x}Ga{sub 1−x}N alloys are investigated by optical and structural techniques. H-irradiation gives rise to a remarkable blue-shift of light emission and absorption edge energies. X-ray absorption measurements and first-principle calculations address the microscopic origin of these effects.

  19. Tuning of the optical properties of In-rich InxGa1−xN (x=0.82−0.49) alloys by light-ion irradiation at low energy

    International Nuclear Information System (INIS)

    De Luca, Marta; Polimeni, Antonio; Capizzi, Mario; Pettinari, Giorgio; Ciatto, Gianluca; Fonda, Emiliano; Amidani, Lucia; Boscherini, Federico; Filippone, Francesco; Bonapasta, Aldo Amore; Knübel, Andreas; Cimalla, Volker; Ambacher, Oliver; Giubertoni, Damiano; Bersani, Massimo

    2013-01-01

    The effects of low-energy irradiation by light ions (H and He) on the properties of In-rich In x Ga 1−x N alloys are investigated by optical and structural techniques. H-irradiation gives rise to a remarkable blue-shift of light emission and absorption edge energies. X-ray absorption measurements and first-principle calculations address the microscopic origin of these effects

  20. Electrical activation of solid-phase epitaxially regrown ultra-low energy boron implants in Ge preamorphised silicon and SOI

    International Nuclear Information System (INIS)

    Hamilton, J.J.; Collart, E.J.H.; Colombeau, B.; Jeynes, C.; Bersani, M.; Giubertoni, D.; Sharp, J.A.; Cowern, N.E.B.; Kirkby, K.J.

    2005-01-01

    The formation of highly activated ultra-shallow junctions (USJ) is one of the key requirements for the next generation of CMOS devices. One promising method for achieving this is the use of Ge preamorphising implants (PAI) prior to ultra-low energy B implantation. In future technology nodes, bulk silicon wafers may be supplanted by Silicon-on-Insulator (SOI), and an understanding of the Solid Phase Epitaxial (SPE) regrowth process and its correlation to dopant electrical activation in both bulk silicon and SOI is essential in order to understand the impact of this potential technology change. This kind of understanding will also enable tests of fundamental models for defect evolution and point-defect reactions at silicon/oxide interfaces. In the present work, B is implanted into Ge PAI silicon and SOI wafers with different PAI conditions and B doses, and resulting samples are annealed at various temperatures and times. Glancing-exit Rutherford Backscattering Spectrometry (RBS) is used to monitor the regrowth of the amorphous silicon, and the resulting redistribution and electrical activity of B are monitored by SIMS and Hall measurements. The results confirm the expected enhancement of regrowth velocity by B doping, and show that this velocity is otherwise independent of the substrate type and the Ge implant distribution within the amorphised layer. Hall measurements on isochronally annealed samples show that B deactivates less in SOI material than in bulk silicon, in cases where the Ge PAI end-of-range defects are close to the SOI back interface

  1. The effect of low energy protons on silicon solar cells with simulated coverglass cracks

    Science.gov (United States)

    Gasner, S.; Anspaugh, B.; Francis, R.; Marvin, D.

    1991-01-01

    Results of a series of low-energy proton (LEP) tests are presented. The purpose of the tests was to investigate the effect of low-energy protons on the electrical performance of solar cells with simulated cracked covers. The results of the tests were then related to the space environment. A matrix of LEP tests was set up using solar cells with simulated cracks to determine the effect on electrical performance as a function of fluence, energy, crack width, coverglass adhesive shielding, crack location, and solar cell size. The results of the test were, for the most part, logical, and consistent.

  2. Progress and tendency in heavy ion irradiation mutation breeding

    International Nuclear Information System (INIS)

    Zhou Libin; Li Wenjian; Qu Ying; Li Ping

    2008-01-01

    In recent years, the intermediate energy heavy ion biology has been concerned rarely comparing to that of the low-energy ions. In this paper, we summarized the advantage of a new mutation breeding method mediated by intermediate energy heavy ion irradiations. Meanwhile, the present state of this mutation technique in applications of the breeding in grain crops, cash crops and model plants were introduced. And the preview of the heavy ion irradiations in gene-transfer, molecular marker assisted selection and spaceflight mutation breeding operations were also presented. (authors)

  3. Damage nucleation in Si during ion irradiation

    International Nuclear Information System (INIS)

    Holland, O.W.; Fathy, D.; Narayan, J.

    1984-01-01

    Damage nucleation in single crystals of silicon during ion irradiation is investigated. Experimental results and mechanisms for damage nucleation during both room and liquid nitrogen temperature irradiation with different mass ions are discussed. It is shown that the accumulation of damage during room temperature irradiation depends on the rate of implantation. These dose rate effects are found to decrease in magnitude as the mass of the ions is increased. The significance of dose rate effects and their mass dependence on nucleation mechanisms is discussed

  4. Deep levels induced by low energy B+ implantation into Ge-preamorphised silicon in correlation with end of range formation

    International Nuclear Information System (INIS)

    Benzohra, Mohamed; Olivie, Francois; Idrissi-Benzohra, Malika; Ketata, Kaouther; Ketata, Mohamed

    2002-01-01

    It is well established that low energy B + ion implantation into Ge- (or Si) implantation pre-amorphised silicon allows ultra-shallow p + n junctions formation. However, this process is known to generate defects such as dislocation loops, vacancies and interstitials which can act as vehicles to different mechanisms inducing electrically active levels into the silicon bulk. The junctions studied have been obtained using 3 keV/10 15 cm -2 B + implantation into Ge-implantation pre-amorphised substrates and into a reference crystalline substrate. Accurate measurements using deep level transient spectroscopy (DLTS) and isothermal transient capacitance ΔC(t,T) were performed to characterise these levels. Such knowledge is crucial to improve the device characteristics. In order to sweep the silicon band gap, various experimental conditions were considered. The analysis of DLTS spectra have first showed three deep levels associated to secondary induced defects. Their concentration profiles were derived from isothermal transient capacitance at depths up to 3.5 μm into the silicon bulk and allowed us to detect a new deep level. The evolution of such defect distribution in correlation with the technological steps is discussed. The end of range (EOR) defect influence on electrical activity of secondary induced defects in ultra-shallow p + n diodes is clearly demonstrated

  5. Development and analysis of silicon based detectors for low energy nuclear radiation

    International Nuclear Information System (INIS)

    Johansen, G.A.

    1990-11-01

    The design and assembly of a prototype silicon based detector especially for the detection of auroral X-rays is presented. The theoretical fundamentals are shown and the adoption of the detector for applications in future satellite experiments are described. 136 refs

  6. Scanning of irradiated silicon detectors using $\\alpha$ particles and low energy protons

    CERN Document Server

    Casse, G L; Glaser, M; Kohout, Z; Konícek, J; Lemeilleur, F; Leroy, C; Linhart, V; Mares, J J; Pospísil, S; Roy, P; Sopko, B; Sinor, M; Svejda, J; Vorobel, V; Wilhelm, I

    1999-01-01

    In a spectroscopic study of non-irradiated and proton-irradiated silicon diodes, the detectors were illuminated from the front side and from the rear side by various alpha particle sources (mainly ThC') and by monoenergetic protons with energies from 1.0 to 2.5~MeV. Their response characteristics have been studied as a function of the incoming particle energy and the applied bias voltage. The charge collection efficiency was determined as a function of fluence

  7. Operation of low-energy ion implanters for Si, N, C ion implantation into silicon and glassy carbon

    International Nuclear Information System (INIS)

    Carder, D.A.; Markwitz, A.

    2009-01-01

    This report details the operation of the low-energy ion implanters at GNS Science for C, N and Si implantations. Two implanters are presented, from a description of the components through to instructions for operation. Historically the implanters have been identified with the labels 'industrial' and 'experimental'. However, the machines only differ significantly in the species of ions available for implantation and sample temperature during implantation. Both machines have been custom designed for research purposes, with a wide range of ion species available for ion implantation and the ability to implant two ions into the same sample at the same time from two different ion sources. A fast sample transfer capability and homogenous scanning profiles are featured in both cases. Samples up to 13 mm 2 can be implanted, with the ability to implant at temperatures down to liquid nitrogen temperatures. The implanters have been used to implant 28 Si + , 14 N + and 12 C + into silicon and glassy carbon substrates. Rutherford backscattering spectroscopy has been used to analyse the implanted material. From the data a Si 30 C 61 N 9 layer was measured extending from the surface to a depth of about 77 ± 2 nm for (100) silicon implanted with 12 C + and 14 N + at multiple energies. Silicon and nitrogen ion implantation into glassy carbon produced a Si (40.5 %), C (38 %), N (19.5 %) and O (2%) layer centred around a depth of 50 ± 2 nm from the surface. (author). 8 refs., 20 figs

  8. Low-energy X-ray and gamma spectrometry using silicon photodiodes

    International Nuclear Information System (INIS)

    Silva, Iran Jose Oliveira da

    2000-08-01

    The use of semiconductor detectors for radiation detection has increased in recent years due to advantages they present in comparison to other types of detectors. As the working principle of commercially available photodiodes is similar to the semiconductor detector, this study was carried out to evaluate the use of Si photodiodes for low energy x-ray and gamma spectrometry. The photodiodes investigated were SFH-205, SFH-206, BPW-34 and XRA-50 which have the following characteristics: active area of 0,07 cm 2 and 0,25 cm 2 , thickness of the depletion ranging from 100 to 200 μm and junction capacitance of 72 pF. The photodiode was polarized with a reverse bias and connected to a charge sensitive pre-amplifier, followed by a amplifier and multichannel pulse analyzer. Standard radiation source used in this experiment were 241 Am, 109 Cd, 57 Co and 133 Ba. The X-ray fluorescence of lead and silver were also measured through K- and L-lines. All the measurements were made with the photodiodes at room temperature.The results show that the responses of the photodiodes very linear by the x-ray energy and that the energy resolution in FWHM varied between 1.9 keV and 4.4 keV for peaks corresponding to 11.9 keV to 59 keV. The BPW-34 showed the best energy resolution and the lower dark current. The full-energy peak efficiency was also determined and it was observed that the peak efficiency decreases rapidly above 50 keV. The resolution and efficiency are similar to the values obtained with other semiconductor detectors, evidencing that the photodiodes used in that study can be used as a good performance detector for low energy X-ray and gamma spectrometry. (author)

  9. Formation of SiC using low energy CO2 ion implantation in silicon

    International Nuclear Information System (INIS)

    Sari, A.H.; Ghorbani, S.; Dorranian, D.; Azadfar, P.; Hojabri, A.R.; Ghoranneviss, M.

    2008-01-01

    Carbon dioxide ions with 29 keV energy were implanted into (4 0 0) high-purity p-type silicon wafers at nearly room temperature and doses in the range between 1 x 10 16 and 3 x 10 18 ions/cm 2 . X-ray diffraction analysis (XRD) was used to characterize the formation of SiC in implanted Si substrate. The formation of SiC and its crystalline structure obtained from above mentioned technique. Topographical changes induced on silicon surface, grains and evaluation of them at different doses observed by atomic force microscopy (AFM). Infrared reflectance (IR) and Raman scattering measurements were used to reconfirm the formation of SiC in implanted Si substrate. The electrical properties of implanted samples measured by four point probe technique. The results show that implantation of carbon dioxide ions directly leads to formation of 15R-SiC. By increasing the implantation dose a significant changes were also observed on roughness and sheet resistivity properties.

  10. Low-energy ion bombardment to tailor the interfacial and mechanical properties of polycrystalline 3C-silicon carbide

    International Nuclear Information System (INIS)

    Liu Fang; Li, Carolina H.; Pisano, Albert P.; Carraro, Carlo; Maboudian, Roya

    2010-01-01

    Low-energy Ar + ion bombardment of polycrystalline 3C-silicon carbide (poly-SiC) films is found to be a promising surface modification method to tailor the mechanical and interfacial properties of poly-SiC. The film average stress decreases as the ion energy and the bombardment time increase. Furthermore, this treatment is found to change the strain gradient of the films from positive to negative values. The observed changes in stress and strain gradient are explained by ion peening and thermal spikes models. In addition, the poly-SiC films show a significant enhancement in corrosion resistance by this treatment, which is attributed to a reduction in surface energy and to an increase in the compressive stress in the near-surface region.

  11. Analysis of the surface technology of silicon detectors for imaging of low-energy beta tracers in biological material

    CERN Document Server

    Tykva, R

    2000-01-01

    Using silicon surface barrier detectors, the counting sensitivity of low-energy beta tracers is considerably influenced by surface technology applied in detector manufacturing. Original diagnostic procedure, using a mixture of uranium fission products, is described to trace the behaviors of different admixtures as in the etching bath as in the water used during development of the detector surface. In combination with some other described analyses, the detectors produced with the developed surface control are used in a PC - controlled scanning equipment reaching at room temperature an FWHM of 3.4 keV for sup 2 sup 4 sup 1 Am. Such detectors make it possible to image distribution, of e.g., sup 3 H, sup 1 sup 2 sup 5 I, sup 3 H+ sup 1 sup 4 C and other beta tracer combinations applied in life and environmental sciences.

  12. Low-energy excitations in amorphous films of silicon and germanium

    International Nuclear Information System (INIS)

    Liu, X.; Pohl, R.O.

    1998-01-01

    We present measurements of internal friction and shear modulus of amorphous Si (a-Si) and amorphous Ge (a-Ge) films on double-paddle oscillators at 5500 Hz from 0.5 K up to room temperature. The temperature- independent plateau in internal friction below 10 K, which is common to all amorphous solids, also exists in these films. However, its magnitude is smaller than found for all other amorphous solids studied to date. Furthermore, it depends critically on the deposition methods. For a-Si films, it decreases in the sequence of electron-beam evaporation, sputtering, self-ion implantation, and hot-wire chemical-vapor deposition (HWCVD). Annealing can also reduce the internal friction of the amorphous films considerably. Hydrogenated a-Si with 1 at.% H prepared by HWCVD leads to an internal friction more than two orders of magnitude smaller than observed for all other amorphous solids. The internal friction increases after the hydrogen is removed by effusion. Our results are compared with earlier measurements on a-Si and a-Ge films, none of which had the sensitivity achieved here. The variability of the low-energy tunneling states in the a-Si and a-Ge films may be a consequence of the tetrahedrally bonded covalent continuous random network. The perfection of this network, however, depends critically on the preparation conditions, with hydrogen incorporation playing a particularly important role. copyright 1998 The American Physical Society

  13. Mechanical properties of silicon oxynitride thin films prepared by low energy ion beam assisted deposition

    International Nuclear Information System (INIS)

    Shima, Yukari; Hasuyama, Hiroki; Kondoh, Toshiharu; Imaoka, Yasuo; Watari, Takanori; Baba, Koumei; Hatada, Ruriko

    1999-01-01

    Silicon oxynitride (SiO x N y ) films (0.1-0.7 μm) were produced on Si (1 0 0), glass and 316L stainless steel substrates by ion beam assisted deposition (IBAD) using Si evaporation and the concurrent bombardment with a mixture of 200 eV N 2 and Ar, or O 2 and Ar ions. Adhesion was evaluated by pull-off tests. Film hardness was measured by a nanoindentation system with AFM. The measurement of internal stress in the films was carried out by the Stoney method. The film structure was examined by GXRD. XPS was employed to measure the composition of films and to analyze the chemical bonds. The dependence of mechanical properties on the film thickness and the processing temperature during deposition was studied. Finally, the relations between the mechanical properties of the films and the correlation with corrosion-protection ability of films are discussed and summarized

  14. Scanning ion irradiation of polyimide films

    Energy Technology Data Exchange (ETDEWEB)

    Luecken, Stefan; Koval, Yuri; Mueller, Paul [Department of Physics and Interdisciplinary Center for Molecular Materials (ICMM), Universitaet Erlangen-Nuernberg (Germany)

    2012-07-01

    Recently we found, that the surface of nearly any polymer can be converted into conductive material by low energy ion irradiation. The graphitized layer consists of nanometer sized graphene and graphite flakes. In order to enhance the conductivity and to increase the size of the flakes we applied a novel method of scanning irradiation. We investigated the influence of various irradiation parameters on the conductivity of the graphitized layer. We show, that the conductance vs. temperature can be described in terms of weak Anderson localization. At approximately 70 K, a crossover occurs from 2-dimensional to 3-dimensional behavior. This can be explained by a decrease of the Thouless length with increasing temperature. The crossover temperature can be used to estimate the thickness of the graphitized layer.

  15. Impact of dopant profiles on the end of range defects for low energy germanium preamorphized silicon

    International Nuclear Information System (INIS)

    Camillo-Castillo, R.A.; Law, M.E.; Jones, K.S.

    2004-01-01

    As the industry continues to aggressively scale CMOS technology, the shift to lower energy ion implantation becomes essential. The consequent shallower amorphous layers result in dopant profiles that are in closer proximity to the end of range (EOR) damage and therefore a better understanding of the interaction between the dopant atoms and the EOR is required. A study is conducted on the influence of dopant profiles on the behavior of the EOR defects. Czochralski-grown silicon wafers are preamorphized with 1 x 10 15 cm -2 , 10 keV Ge + ions and subsequently implanted with 1 x 10 15 cm -2 , 1 keV B + ions. A sequence of rapid thermal and furnace anneals are performed at 750 deg. C under a nitrogen ambient for periods of 1 s up to 6 h. Plan view transmission electron microscopy (PTEM) reveals a significant difference in the defect evolution for samples with and without boron, suggesting that the boron influences the evolution of the EOR defects. The extended defects observed for samples which contain boron appear as dot-like defects which are unstable and dissolve after very short anneal times. The defect evolution however, in samples without boron follows an Oswald ripening behavior and form {3 1 1}-type defects and dislocation loops. Hall effect measurements denote a high initial activation and subsequent deactivation of the dopant atoms which is characteristic of the formation of boron interstitial clusters. Diffusion analyses via secondary ion mass spectroscopy (SIMS) support this theory

  16. A new large solid angle multi-element silicon drift detector system for low energy X-ray fluorescence spectroscopy

    Science.gov (United States)

    Bufon, J.; Schillani, S.; Altissimo, M.; Bellutti, P.; Bertuccio, G.; Billè, F.; Borghes, R.; Borghi, G.; Cautero, G.; Cirrincione, D.; Fabiani, S.; Ficorella, F.; Gandola, M.; Gianoncelli, A.; Giuressi, D.; Kourousias, G.; Mele, F.; Menk, R. H.; Picciotto, A.; Rachevski, A.; Rashevskaya, I.; Sammartini, M.; Stolfa, A.; Zampa, G.; Zampa, N.; Zorzi, N.; Vacchi, A.

    2018-03-01

    Low-energy X-ray fluorescence (LEXRF) is an essential tool for bio-related research of organic samples, whose composition is dominated by light elements. Working at energies below 2 keV and being able to detect fluorescence photons of lightweight elements such as carbon (277 eV) is still a challenge, since it requires in-vacuum operations to avoid in-air photon absorption. Moreover, the detectors must have a thin entrance window and collect photons at an angle of incidence near 90 degrees to minimize the absorption by the protective coating. Considering the low fluorescence yield of light elements, it is important to cover a substantial part of the solid angle detecting ideally all emitted X-ray fluorescence (XRF) photons. Furthermore, the energy resolution of the detection system should be close to the Fano limit in order to discriminate elements whose XRF emission lines are often very close within the energy spectra. To ensure all these features, a system consisting of four monolithic multi-element silicon drift detectors was developed. The use of four separate detector units allows optimizing the incidence angle on all the sensor elements. The multi-element approach in turn provides a lower leakage current on each anode, which, in combination with ultra-low noise preamplifiers, is necessary to achieve an energy resolution close to the Fano limit. The potential of the new detection system and its applicability for typical LEXRF applications has been proved on the Elettra TwinMic beamline.

  17. Spectroscopic characterization of ion-irradiated multi-layer graphenes

    Energy Technology Data Exchange (ETDEWEB)

    Tsukagoshi, Akira [Graduate School of Engineering, University of Hyogo, Himeji, Hyogo 671-2280 (Japan); RIKEN SPring-8 Center, Sayo, Hyogo 679-5148 (Japan); Honda, Shin-ichi, E-mail: s-honda@eng.u-hyogo.ac.jp [Graduate School of Engineering, University of Hyogo, Himeji, Hyogo 671-2280 (Japan); RIKEN SPring-8 Center, Sayo, Hyogo 679-5148 (Japan); Osugi, Ryo [Graduate School of Engineering, University of Hyogo, Himeji, Hyogo 671-2280 (Japan); RIKEN SPring-8 Center, Sayo, Hyogo 679-5148 (Japan); Okada, Hiraku [Graduate School of Engineering, University of Hyogo, Himeji, Hyogo 671-2280 (Japan); Niibe, Masahito [Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigori, Hyogo 678-1205 (Japan); Terasawa, Mititaka [Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigori, Hyogo 678-1205 (Japan); RIKEN SPring-8 Center, Sayo, Hyogo 679-5148 (Japan); Hirase, Ryuji; Izumi, Hirokazu; Yoshioka, Hideki [Hyogo Prefectural Institute of Technology, Kobe 654-0037 (Japan); Niwase, Keisuke [Hyogo University of Teacher Education, Kato, Hyogo 673-1494 (Japan); Taguchi, Eiji [Research Center for Ultra-High Voltage Electron Microscopy, Osaka University, Ibaraki, Osaka 567-0047 (Japan); Lee, Kuei-Yi [Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Oura, Masaki [RIKEN SPring-8 Center, Sayo, Hyogo 679-5148 (Japan)

    2013-11-15

    Low-energy Ar ions (0.5–2 keV) were irradiated to multi-layer graphenes and the damage process, the local electronic states, and the degree of alignment of the basal plane, and the oxidation process upon ion irradiation were investigated by Raman spectroscopy, soft X-ray absorption spectroscopy (XAS) and in situ X-ray photoelectron spectroscopy (XPS). By Raman spectroscopy, we observed two stages similar to the case of irradiated graphite, which should relate to the accumulations of vacancies and turbulence of the basal plane, respectively. XAS analysis indicated that the number of sp{sup 2}-hybridized carbon (sp{sup 2}-C) atoms decreased after ion irradiation. Angle-resolved XAS revealed that the orientation parameter (OP) decreased with increasing ion energy and fluence, reflecting the turbulence of the basal plane under irradiation. In situ XPS shows the oxidation of the irradiated multi-layer graphenes after air exposure.

  18. Contribution to the study of low-energy X-ray-induced degradations on the oxide-silicon interfacial transition layer of MOS structures

    International Nuclear Information System (INIS)

    Boukabache, Ali

    1983-01-01

    The Si-SiO_2 interface is considered as a transition layer. Its thickness is typically about 10 A. It contains traps which exchange charges with silicon by a tunneling mechanism. Its influence on MOS capacitor, gate-controlled diode and MOS transistor is analyzed. Long channel MOST's (P-Substrate) are irradiated with low energy X-ray (between 0 and 240 Krads) in order to validate the model. Capacitance, recombination velocity and 1/f noise measurements indicate that the X- ray induce traps distributed in space and in energy. These traps provoke a decrease in mobility. Additionally, X-rays create a fixed oxide charge which induce a shift in the characteristics of MOS structures. Finally, under irradiation the behaviour of the gate-controlled diode and the MOS capacitor are in accordance with theoretical model of the interfacial layer. The overall noise behaviour cannot be explained by existing theoretical models. (author) [fr

  19. Dopant redistribution and electrical activation in silicon following ultra-low energy boron implantation and excimer laser annealing

    International Nuclear Information System (INIS)

    Whelan, S.; La Magna, A.; Privitera, V.; Mannino, G.; Italia, M.; Bongiorno, C.; Fortunato, G.; Mariucci, L.

    2003-01-01

    Excimer laser annealing (ELA) of ultra-low-energy (ULE) B-ion implanted Si has been performed. High-resolution transmission electron microscopy has been used to assess the as-implanted damage and the crystal recovery following ELA. The electrical activation and redistribution of B in Si during ELA has been investigated as a function of the laser energy density (melted depth), the implant dose, and the number of laser pulses (melt time). The activated and retained dose has been evaluated with spreading resistance profiling and secondary ion mass spectrometry. A significant amount of the implanted dopant was lost from the sample during ELA. However, the dopant that was retained in crystal material was fully activated following rapid resolidification. At an atomic concentration below the thermodynamic limit, the activation efficiency (dose activated/dose implanted into Si material) was a constant for a fixed melt depth, irrespective of the dose implanted and hence the total activated dose was raised as the implant dose was increased. The electrical activation was increased for high laser energy density annealing when the dopant was redistributed over a deeper range

  20. Mutagenic effects of heavy ion irradiation on rice seeds

    International Nuclear Information System (INIS)

    Xu Xue; Liu Binmei; Zhang Lili; Wu Yuejin

    2012-01-01

    Three varieties of rice seeds were subjected to irradiation using low-energy and medium-energy ions. The damage and mutations induced by the ions were examined. In addition, genetic analysis and gene mapping of spotted leaf (spl) mutants were performed. Low-energy ions had no significant influence on germination, survival or seedling height, except for the survival of Nipponbare. Medium-energy ions had a significant influence on germination and survival but had no significant effect on seedling height. In the low-energy group, among 60,000 M 2 plants, 2823 putative morphological mutants were found, and the mutation frequency was approximately 4.71%. In the medium-energy group, 3132 putative morphological mutants were found, and the mutation frequency was approximately 5.22%. Five spl mutants (spl29–spl33) were obtained by ion irradiation, and the heredity of the spl mutants was stable. The characteristics of the spl mutants were found, by genetic analysis and preliminary mapping, to be controlled by a single recessive gene, and spl30 and spl33 were found to be new lesion-mimic mutants.

  1. Mutagenic effects of heavy ion irradiation on rice seeds

    Energy Technology Data Exchange (ETDEWEB)

    Xu Xue [School of Agronomy, Anhui Agricultural University, 130 Changjiang West Road, Hefei 230036 (China); Key Laboratory of Ion Beam Bio-Engineering, Institute of Technical Biology and Agriculture Engineering, 350 Shushanhu Road, Hefei 230031 (China); Liu Binmei; Zhang Lili [Key Laboratory of Ion Beam Bio-Engineering, Institute of Technical Biology and Agriculture Engineering, 350 Shushanhu Road, Hefei 230031 (China); Wu Yuejin, E-mail: yjwu@ipp.ac.cn [Key Laboratory of Ion Beam Bio-Engineering, Institute of Technical Biology and Agriculture Engineering, 350 Shushanhu Road, Hefei 230031 (China)

    2012-11-01

    Three varieties of rice seeds were subjected to irradiation using low-energy and medium-energy ions. The damage and mutations induced by the ions were examined. In addition, genetic analysis and gene mapping of spotted leaf (spl) mutants were performed. Low-energy ions had no significant influence on germination, survival or seedling height, except for the survival of Nipponbare. Medium-energy ions had a significant influence on germination and survival but had no significant effect on seedling height. In the low-energy group, among 60,000 M{sub 2} plants, 2823 putative morphological mutants were found, and the mutation frequency was approximately 4.71%. In the medium-energy group, 3132 putative morphological mutants were found, and the mutation frequency was approximately 5.22%. Five spl mutants (spl29-spl33) were obtained by ion irradiation, and the heredity of the spl mutants was stable. The characteristics of the spl mutants were found, by genetic analysis and preliminary mapping, to be controlled by a single recessive gene, and spl30 and spl33 were found to be new lesion-mimic mutants.

  2. Low-energy oxygen bombardment of silicon by MD simulations making use of a reactive force field

    International Nuclear Information System (INIS)

    Philipp, P.; Briquet, L.; Wirtz, T.; Kieffer, J.

    2011-01-01

    In the field of Secondary Ion Mass Spectrometry (SIMS), ion-matter interactions have been largely investigated by numerical simulations. For MD simulations related to inorganic samples, mostly classical force fields assuming stable bonding structure have been used. In materials science, level-three force fields capable of simulating the breaking and formation of chemical bonds have recently been conceived. One such force field has been developed by John Kieffer . This potential includes directional covalent bonds, Coulomb and dipolar interaction terms, dispersion terms, etc. Important features of this force field for simulating systems that undergo significant structural reorganization are (i) the ability to account for the redistribution of electron density upon ionization, formation, or breaking of bonds, through a charge transfer term, and (ii) the fact that the angular constraints dynamically adjust when a change in the coordination number of an atom occurs. In this paper, the modification of the force field to allow for an exact description of the sputtering process, the influence of this modification on previous results obtained for phase transitions in glasses as well as properties of particles sputtered at 250-1000 eV from a mono-crystalline silicon sample will be presented. The simulation results agree qualitatively with predictions from experiments or models. Most atoms are sputtered from the first monolayer: for an impact energy of 250 eV up to 86% of the atoms are sputtered from the first monolayer and for 750 eV, this percentage drops to 61%, with 89% of the atoms being sputtered from the first two monolayers. For sputtering yields, 250 and 500 eV results agree with experimental data, but for 750 eV sub-channelling in the pristine sample becomes more important than in experiments where samples turn amorphous under ion bombardment.

  3. Colloidal assemblies modified by ion irradiation

    NARCIS (Netherlands)

    Snoeks, E.; Blaaderen, A. van; Dillen, T. van; Kats, C.M. van; Velikov, K.P.; Brongersma, M.L.; Polman, A.

    2001-01-01

    Spherical SiO2 and ZnS colloidal particles show a dramatic anisotropic plastic deformation under 4 MeV Xe ion irradiation, that changes their shape into oblate into oblate ellipsional, with an aspect ratio that can be precisely controlled by the ion fluence. The 290 nm and 1.1 um diameter colloids

  4. Tailoring magnetism by light-ion irradiation

    International Nuclear Information System (INIS)

    Fassbender, J; Ravelosona, D; Samson, Y

    2004-01-01

    Owing to their reduced dimensions, the magnetic properties of ultrathin magnetic films and multilayers, e.g. magnetic anisotropies and exchange coupling, often depend strongly on the surface and interface structure. In addition, chemical composition, crystallinity, grain sizes and their distribution govern the magnetic behaviour. All these structural properties can be modified by light-ion irradiation in an energy range of 5-150 keV due to the energy loss of the ions in the solid along their trajectory. Consequently the magnetic properties can be tailored by ion irradiation. Similar effects can also be observed using Ga + ion irradiation, which is the common ion source in focused ion beam lithography. Examples of ion-induced modifications of magnetic anisotropies and exchange coupling are presented. This review is limited to radiation-induced structural changes giving rise to a modification of magnetic parameters. Ion implantation is discussed only in special cases. Due to the local nature of the interaction, magnetic patterning without affecting the surface topography becomes feasible, which may be of interest in applications. The main patterning technique is homogeneous ion irradiation through masks. Focused ion beam and ion projection lithography are usually only relevant for larger ion masses. The creation of magnetic feature sizes below 50 nm is shown. In contrast to topographic nanostructures the surrounding area of these nanostructures can be left ferromagnetic, leading to new phenomena at their mutual interface. Most of the material systems discussed here are important for technological applications. The main areas are magnetic data storage applications, such as hard magnetic media with a large perpendicular magnetic anisotropy or patterned media with an improved signal to noise ratio and magnetic sensor elements. It will be shown that light-ion irradiation has many advantages in the design of new material properties and in the fabrication technology of

  5. Damage induced in semiconductors by swift heavy ion irradiation

    International Nuclear Information System (INIS)

    Levalois, M.; Marie, P.

    1999-01-01

    The behaviour of semiconductors under swift heavy ion irradiation is different from that of metals or insulators: no spectacular effect induced by the inelastic energy loss has been reported in these materials. We present here a review of irradiation effects in the usual semiconductors (silicon, germanium and gallium arsenide). The damage is investigated by means of electrical measurements. The usual mechanisms of point defect creation can account for the experimental results. Besides, some results obtained on the wide gap semiconductor silicon carbide are reported. Concerning the irradiation effects induced by heavy ions in particle detectors, based on silicon substrate, we show that the deterioration of the detector performances can be explained from the knowledge of the substrate properties which are strongly perturbed after high doses of irradiation. Finally, some future ways of investigation are proposed. The silicon substrate is a good example to compare the irradiation effects with different particles such as electrons, neutrons and heavy ions. It is then necessary to use parameters which account for the local energy deposition, in order to describe the damage in the material

  6. Variable low energy positron beams for depth resolved defect spectroscopy in thin film structures

    International Nuclear Information System (INIS)

    Amarendra, G.; Viswanathan, B.; Venugopal Rao, G.; Parimala, J.; Purniah, B.

    1997-01-01

    The design, development and commissioning details of an ultra high vacuum compatible, magnetically-guided and compact variable low energy positron beam facility are reported. Information pertaining to the nature, concentration and spatial distribution of defects present at various depths in the near-surface layers of a material can be obtained using this technique. Some of the experimental results obtained using this facility, in terms of surface-sensitive positronium fraction measurements on Cu surfaces as well as defect-sensitive Doppler broadening measurements on semiconductor interfaces and ion irradiated silicon are presented. These results essentially provide an illustration of the research capability of the technique for the study of sub-surface regions and thin film interfaces. (author)

  7. [Grain boundary and interface kinetics during ion irradiation

    International Nuclear Information System (INIS)

    Atwater, H.A.

    1991-01-01

    Proposed here is renewed support of a research program focused on interface motion and phase transformation during ion irradiation, with emphasis on elemental semiconductors. Broadly speaking, the aims of this program are to explore defect kinetics in amorphous and crystalline semiconductors, and to relate defect dynamics to interface motion and phase transformations. Over the last three years, we initiated a program under DOE support to explore crystallization and amorphization of elemental semiconductors under irradiation. This research has enabled new insights about the nature of defects in amorphous semiconductors and about microstructural evolution in the early stages of crystallization. In addition, we have demonstrated almost arbitrary control over the relative rates of crystal nucleation and crystal growth in silicon. As a result, the impinged grain microstructure of thin (100 nm) polycrystalline films crystallized under irradiation can be controlled with grain sizes ranging from a few nanometers to several micrometers, which may have interesting technological implications

  8. Effects of dual-ion irradiation on the swelling of SiC/SiC composites

    International Nuclear Information System (INIS)

    Kishimoto, Hirotatsu; Kohyama, Akira; Ozawa, Kazumi; Kondo, Sosuke

    2005-01-01

    Silicon carbide (SiC) matrix composites reinforced by SiC fibers is a candidate structural material of fusion gas-cooled blanket system. From the viewpoint of material designs, it is important to investigate the swelling by irradiation, which results from the accumulation of displacement damages. In the fusion environment, (n, α) nuclear reactions are considered to produce helium gas in SiC. For the microstructural evolution, a dual-ion irradiation method is able to simulate the effects of helium. In the present research, 1.7 MeV tandem and 1 MeV single-end accelerators were used for Si self-ion irradiation and helium implantation, respectively. The average helium over displacement per atom (dpa) ratio in SiC was adjusted to 60 appm/dpa. The irradiation temperature ranged from room temperature to 1400degC. The irradiation-induced swelling was measured by the step height method. Helium that was implanted simultaneously with displacement damages in dual-ion irradiated SiC increased the swelling that was larger than that by single-ion irradiated SiC below 800degC. Since this increase was not observed above 1000degC, the interaction of helium and displacement damages was considered to change above 800degC. In this paper, the microstructural behavior and dimensional stability of SiC materials under the fusion relevant environment are discussed. (author)

  9. Changes in the surface electronic states of semiconductor fine particles induced by high energy ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Yamaki, Tetsuya; Asai, Keisuke; Ishigure, Kenkichi [Tokyo Univ. (Japan); Shibata, Hiromi

    1997-03-01

    The changes in the surface electronic states of Q-sized semiconductor particles in Langmuir-Blodgett (LB) films, induced by high energy ion irradiation, were examined by observation of ion induced emission and photoluminescence (PL). Various emission bands attributed to different defect sites in the band gap were observed at the initial irradiation stage. As the dose increased, the emissions via the trapping sites decreased in intensity while the band-edge emission developed. This suggests that the ion irradiation would remove almost all the trapping sites in the band gap. The low energy emissions, which show a multiexponential decay, were due to a donor-acceptor recombination between the deeply trapped carriers. It was found that the processes of formation, reaction, and stabilization of the trapping sites would predominantly occur under the photooxidizing conditions. (author)

  10. Effect of swift heavy ion-irradiation on Cr/Fe/Ni multilayers

    International Nuclear Information System (INIS)

    Gupta, Ratnesh; Gupta, Ajay; Avasthi, D.K.; Principi, G.; Tosello, C.

    1999-01-01

    A multilayer film having overall composition Fe 50 Cr 25 Ni 25 , was irradiated successively by 80 MeV Si ions and Ag ions of 150 and 200 MeV energy. The energy deposited in the multilayer in the form of electronic excitations results in significant modification at the interfaces. The interfacial roughness increases in the system after the irradiations as revealed by X-ray reflectivity measurement. Moessbauer measurements provide evidence of intermixing after the irradiation by 200 MeV Ag ions. Comparison of heavy ion irradiated multilayer has been done with annealed and low energy ion irradiated samples. Results suggest that the phases formed at the interfaces of iron as a result of electronic energy loss are similar to those in the cases of thermal diffusion and keV energy ion beam irradiation

  11. Colloidal assemblies modified by ion irradiation

    OpenAIRE

    Snoeks, E.; Blaaderen, A. van; Dillen, T. van; Kats, C.M. van; Velikov, K.P.; Brongersma, M.L.; Polman, A.

    2001-01-01

    Spherical SiO2 and ZnS colloidal particles show a dramatic anisotropic plastic deformation under 4 MeV Xe ion irradiation, that changes their shape into oblate into oblate ellipsional, with an aspect ratio that can be precisely controlled by the ion fluence. The 290 nm and 1.1 um diameter colloids were deposited on a Si substrate and irradiated at 90 K, using fluences in the range 3*10^(13)-8*10^(14) cm^(-2). The transverse particle diameter shows a linear increase with ion fluence, while the...

  12. The analysis of low-energy ion from a gas-puff laser plasma. The observation of ablated particles from the silicon irradiated with a fs laser

    International Nuclear Information System (INIS)

    Azuma, Hirozumi; Kamiya, Nobuyuki; Takeuchi, Akihiro; Ito, Tadashi; Suzuki, Noritomo; Daido, Hiroyuki; Mori, Michiaki; Ogura, Kouichi; Sagisaka, Akito; Orimo, Satoshi; Hayashi, Yukio; Hazama, Hisanao

    2005-01-01

    The single-shot creation of tadpolelike silicon nanoparticles constructed with multi-crystalline heads and amorphous tails by a high brightness fs-pulse laser was demonstrated. This is also the first demonstration of the creation of a nanosized connection of multicrystalline silicon with amorphous silicon. This result should expand the creation of new materials by a laser ablation using a high-intensity fs laser, and the created silicon nanoparticles can be applied to scientific and industrial fields. (author)

  13. Modification of graphene by ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Bukowska, Hanna; Akcoeltekin, Sevilay; El Kharrazi, Mourad; Schleberger, Marika [Universitaet Duisburg-Essen, Fakultaet fuer Physik, Duisburg (Germany); Osmani, Orkhan [Universitaet Duisburg-Essen, Fakultaet fuer Physik, Duisburg (Germany); Technische Universitaet Kaiserslautern, Fachbereich Physik, Gottlieb-Daimler-Strasse, Gebaeude 47, 67663 Kaiserslautern (Germany)

    2010-07-01

    Ion irradiation can be used to modify surfaces on the nanometer scale. We investigate graphene on different insulator (SrTiO{sub 3}, TiO{sub 2}, and Al{sub 2}O{sub 3}) and semiconductor (SiO{sub 2}) substrates. The bombardment of those target surfaces with swift heavy ions under grazing angle of incidence creates chains of nanodots on the substrate and folds graphene to typical origami-like structures. The shape of the folded graphene seems to depend on the length of the tracks. The length can be controlled by the angle of incidence. From the analysis of atomic force microscopy measurements, we classify the different types of modifications, with the aim to determine the relationship between chain length and origami shape. Further more we want to develop a theoretical understanding of the physical processes leading to the folding.

  14. Softening of metals under hydrogen ion irradiation

    International Nuclear Information System (INIS)

    Guseva, M.I.; Korshunov, S.N.; Martynenko, Yu.V.; Skorlupkin, I.D.

    2005-01-01

    Experimental study results are presented on steel type 18-10 creep under hydrogen ion irradiation. The Irradiation of annealed specimens is accomplished by 15 keV H 2 + ions with a dose up to 10 22 m -2 at current density of 0.6 A/m 2 at temperatures of 570-770 K. Creep tests show that the irradiation at T = 770 K results in a sharp increase of creep rate. At t 570 K the effect of ion-induced creep in steel 18-10 is not observed. The model is proposed which explains the ion-induced creep by accumulation of hydrogen along grain boundaries, their weakening and removal of obstacles to sliding [ru

  15. Diffusion modelling of low-energy ion-implanted BF{sub 2} in crystalline silicon: Study of fluorine vacancy effect on boron diffusion

    Energy Technology Data Exchange (ETDEWEB)

    Marcon, J. [Laboratoire Electronique Microtechnologie et Instrumentation (LEMI), University of Rouen, 76821 Mont Saint Aignan (France)], E-mail: Jerome.Marcon@univ-rouen.fr; Merabet, A. [Laboratoire de Physique et Mecanique des Materiaux Metalliques, Departement d' O.M.P., Faculte des Sciences de l' Ingenieur, Universite de Setif, 19000 Setif (Algeria)

    2008-12-05

    We have investigated and modelled the diffusion of boron implanted into crystalline silicon in the form of boron difluoride BF{sub 2}{sup +}. We have used published data for BF{sub 2}{sup +} implanted with an energy of 2.2 keV in crystalline silicon. Fluorine effects are considered by using vacancy-fluorine pairs which are responsible for the suppression of boron diffusion in crystalline silicon. Following Uematsu's works, the simulations satisfactory reproduce the SIMS experimental profiles in the 800-1000 deg. C temperature range. The boron diffusion model in silicon of Uematsu has been improved taking into account the last experimental data.

  16. Photocarrier Radiometry for Non-contact Evaluation of Monocrystalline Silicon Solar Cell Under Low-Energy (< 200 keV) Proton Irradiation

    Science.gov (United States)

    Oliullah, Md.; Liu, J. Y.; Song, P.; Wang, Y.

    2018-06-01

    A three-layer theoretical model is developed for the characterization of the electronic transport properties (lifetime τ, diffusion coefficient D, and surface recombination velocity s) with energetic particle irradiation on solar cells using non-contact photocarrier radiometry. Monte Carlo (MC) simulation is carried out to obtain the depth profiles of the proton irradiation layer at different low energies (solar cells are investigated under different low-energy proton irradiation, and the carrier transport parameters of the three layers are obtained by best-fitting of the experimental results. The results show that the low-energy protons have little influence on the transport parameters of the non-irradiated layer, but high influences on both of the p and n-region irradiation layers which are consisted of MC simulation.

  17. Characterization and spice simulation of a single-sided, p+ on n silicon microstrip detector before and after low-energy photon irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Jiaguo; Klanner, Robert; Fretwurst, Eckhart [Institute for Experimental Physics, Detector Laboratory, University of Hamburg, Hamburg 22761 (Germany)

    2010-07-01

    As preparation for the development of silicon detectors for the harsh radiation environment at the European XFEL (up to 1 GGY 12 keV X-rays) p{sup +} on n silicon microstrip detectors were characterized as function of dose. The measurements, which include dark current, coupling capacitance, interstrip capacitance and interstrip resistance, are compared to a detailed SPICE model, so that the performance for particle detection can be estimated.

  18. Studies of defects on ion irradiated diamond

    Energy Technology Data Exchange (ETDEWEB)

    Lai, P F; Prawer, S; Spargo, A E.C.; Bursill, L A [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1997-12-31

    It is known that diamond is amorphized or graphitized when irradiated above a critical dose. Above this critical dose, D{sub c}, the resistance R is found to drop very rapidly due to the formation of graphite regions which overlap at D{sub c} to form a semi-continuous electrically conducting pathway through the sample. One particularly interesting method of studying this transformation is electron energy-loss spectroscopy (EELS). Using EELS, the different phases of carbon can be identified and distinguished from each other using the extended energy-loss fine structure (EXELFS) of the core-loss part of the spectrum. EELS is a sensitive method for determining the electronic structure of small areas of a sample. In this paper, transmission electron microscopy (TEM) and EELS measurements of the ion irradiated diamond were combined in an attempt to correlate the microstructural nature of the ion-beam induced damage to the changes in the electrical and other properties. 7 refs., 1 tab., 2 figs.

  19. Studies of defects on ion irradiated diamond

    Energy Technology Data Exchange (ETDEWEB)

    Lai, P.F.; Prawer, S.; Spargo, A.E.C.; Bursill, L.A. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1996-12-31

    It is known that diamond is amorphized or graphitized when irradiated above a critical dose. Above this critical dose, D{sub c}, the resistance R is found to drop very rapidly due to the formation of graphite regions which overlap at D{sub c} to form a semi-continuous electrically conducting pathway through the sample. One particularly interesting method of studying this transformation is electron energy-loss spectroscopy (EELS). Using EELS, the different phases of carbon can be identified and distinguished from each other using the extended energy-loss fine structure (EXELFS) of the core-loss part of the spectrum. EELS is a sensitive method for determining the electronic structure of small areas of a sample. In this paper, transmission electron microscopy (TEM) and EELS measurements of the ion irradiated diamond were combined in an attempt to correlate the microstructural nature of the ion-beam induced damage to the changes in the electrical and other properties. 7 refs., 1 tab., 2 figs.

  20. Nanoscale Morphology Evolution Under Ion Irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Aziz, Michael J. [President & Fellows of Harvard College, Cambridge, MA (United States)

    2014-11-10

    We showed that the half-century-old paradigm of morphological instability under irradiation due to the curvature-dependence of the sputter yield, can account neither for the phase diagram nor the amplification or decay rates that we measure in the simplest possible experimental system -- an elemental semiconductor with an amorphous surface under noble-gas ion irradiation; We showed that a model of pattern formation based on the impact-induced redistribution of atoms that do not get sputtered away explains our experimental observations; We developed a first-principles, parameter-free approach for predicting morphology evolution, starting with molecular dynamics simulations of single ion impacts, lasting picoseconds, and upscaling through a rigorous crater-function formalism to develop a partial differential equation that predicts morphology evolution on time scales more than twelve orders of magnitude longer than can be covered by the molecular dynamics; We performed the first quantitative comparison of the contributions to morphological instability from sputter removal and from impact-induced redistribution of atoms that are removed, and showed that the former is negligible compared to the latter; We established a new paradigm for impact-induced morphology evolution based on crater functions that incorporate both redistribution and sputter effects; and We developed a model of nanopore closure by irradiation-induced stress and irradiationenhanced fluidity, for the near-surface irradiation regime in which nuclear stopping predominates, and showed that it explains many aspects of pore closure kinetics that we measure experimentally.

  1. Failure Analysis of Heavy-Ion-Irradiated Schottky Diodes

    Science.gov (United States)

    Casey, Megan C.; Lauenstein, Jean-Marie; Wilcox, Edward P.; Topper, Alyson D.; Campola, Michael J.; Label, Kenneth A.

    2017-01-01

    In this work, we use high- and low-magnitude optical microscope images, infrared camera images, and scanning electron microscope images to identify and describe the failure locations in heavy-ion-irradiated Schottky diodes.

  2. Swift heavy ion irradiation induced modification of structure and ...

    Indian Academy of Sciences (India)

    1Department of Physics, Salipur College, Salipur 754 103, India. 2Department of ... Ion irradiation; nanoparticles; atomic force microscopy; BiFeO3. 1. Introduction .... and to understand their possible origin, a study on power spectral density ...

  3. Formation of 2-D arrays of semiconductor nanocrystals or semiconductor-rich nanolayers by very low-energy Si or Ge ion implantation in silicon oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Normand, P. E-mail: p.normand@imel.demokritos.gr; Beltsios, K.; Kapetanakis, E.; Tsoukalas, D.; Travlos, T.; Stoemenos, J.; Berg, J. van den; Zhang, S.; Vieu, C.; Launois, H.; Gautier, J.; Jourdan, F.; Palun, L

    2001-05-01

    The structure evolution of annealed low-energy Si- or Ge-implanted thin and thick SiO{sub 2} layers is studied. The majority of Si (or Ge) species is restricted within a 3-4 nm thick layer. Si is able to separate and crystallize more easily than Ge. The glass transition temperature of the as-implanted structure has a significant effect on the progress of phase transformations accompanying annealing.

  4. Formation of 2-D arrays of semiconductor nanocrystals or semiconductor-rich nanolayers by very low-energy Si or Ge ion implantation in silicon oxide films

    International Nuclear Information System (INIS)

    Normand, P.; Beltsios, K.; Kapetanakis, E.; Tsoukalas, D.; Travlos, T.; Stoemenos, J.; Berg, J. van den; Zhang, S.; Vieu, C.; Launois, H.; Gautier, J.; Jourdan, F.; Palun, L.

    2001-01-01

    The structure evolution of annealed low-energy Si- or Ge-implanted thin and thick SiO 2 layers is studied. The majority of Si (or Ge) species is restricted within a 3-4 nm thick layer. Si is able to separate and crystallize more easily than Ge. The glass transition temperature of the as-implanted structure has a significant effect on the progress of phase transformations accompanying annealing

  5. Study of a solid state micro-dosemeter based on a monolithic silicon telescope: Irradiations with low-energy neutrons and direct comparison with a cylindrical TEPC

    International Nuclear Information System (INIS)

    Agosteo, S.; Colautti, P.; Fanton, I.; Fazzi, A.; Introini, M. V.; Moro, D.; Pola, A.; Varoli, V.

    2011-01-01

    A silicon device based on the monolithic silicon telescope technology coupled to a tissue-equivalent converter was proposed and investigated for solid state microdosimetry. The detector is constituted by a DE stage about 2 μm in thickness geometrically segmented in a matrix of micrometric diodes and a residual-energy measurement stage E about 500 μm in thickness. Each thin diode has a cylindrical sensitive volume 9 μm in nominal diameter, similar to that of a cylindrical tissue-equivalent proportional counter (TEPC). The silicon device and a cylindrical TEPC were irradiated in the same experimental conditions with quasi-monoenergetic neutrons of energy between 0.64 and 2.3 MeV at the INFN-Legnaro National Laboratories (LNLINFN, Legnaro (Italy)). The aim was to study the capability of the silicon-based system of reproducing microdosimetric spectra similar to those measured by a reference micro-dosemeter. The TEPC was set in order to simulate a tissue site about 2 μm in diameter. The spectra of the energy imparted to the ΔE stage of the silicon telescope were corrected for tissue-equivalence through an optimized procedure that exploits the information from the residual energy measurement stage E. A geometrical correction based on parametric criteria for shape-equivalence was also applied. The agreement between the dose distributions of lineal energy and the corresponding mean values is satisfactory at each neutron energy considered. (authors)

  6. Ion irradiation of CH4-containing icy mixtures

    International Nuclear Information System (INIS)

    Baratta, G.A.; Domingo, M.; Ferini, G.; Leto, G.; Palumbo, M.E.; Satorre, M.A.; Strazzulla, G.

    2003-01-01

    We have studied by infrared absorption spectroscopy the effects of ion irradiation with 60 keV Ar 2+ ions on pure methane (CH 4 ) ice at 12 K and mixtures with water (H 2 O) and nitrogen (N 2 ). Ion irradiation, among other effects, causes the rupture of original molecular bonds and the formation of molecular species not present in the initial ice. Here we present the experimental results and discuss their astrophysical relevance

  7. Genetic effects of heavy ion irradiation in maize and soybean

    International Nuclear Information System (INIS)

    Yatou, Osamu; Amano, Etsuo; Takahashi, Tan.

    1992-01-01

    Somatic mutation on leaves of maize and soybean were observed to investigate genetic effects of heavy ion irradiation. Maize seeds were irradiated with N, Fe and U ions and soybean seeds were irradiated with N ions. This is a preliminary report of the experiment, 1) to examine the mutagenic effects of the heavy ion irradiation, and 2) to evaluate the genetic effects of cosmic ray exposure in a space ship outside the earth. (author)

  8. Heavy Ion Irradiation Effects in Zirconium Nitride

    International Nuclear Information System (INIS)

    Egeland, G.W.; Bond, G.M.; Valdez, J.A.; Swadener, J.G.; McClellan, K.J.; Maloy, S.A.; Sickafus, K.E.; Oliver, B.

    2004-01-01

    Polycrystalline zirconium nitride (ZrN) samples were irradiated with He + , Kr ++ , and Xe ++ ions to high (>1.10 16 ions/cm 2 ) fluences at ∼100 K. Following ion irradiation, transmission electron microscopy (TEM) and grazing incidence X-ray diffraction (GIXRD) were used to analyze the microstructure and crystal structure of the post-irradiated material. For ion doses equivalent to approximately 200 displacements per atom (dpa), ZrN was found to resist any amorphization transformation, based on TEM observations. At very high displacement damage doses, GIXRD measurements revealed tetragonal splitting of some of the diffraction maxima (maxima which are associated with cubic ZrN prior to irradiation). In addition to TEM and GIXRD, mechanical property changes were characterized using nano-indentation. Nano-indentation revealed no change in elastic modulus of ZrN with increasing ion dose, while the hardness of the irradiated ZrN was found to increase significantly with ion dose. Finally, He + ion implanted ZrN samples were annealed to examine He gas retention properties of ZrN as a function of annealing temperature. He gas release was measured using a residual gas analysis (RGA) spectrometer. RGA measurements were performed on He-implanted ZrN samples and on ZrN samples that had also been irradiated with Xe ++ ions, in order to introduce high levels of displacive radiation damage into the matrix. He evolution studies revealed that ZrN samples with high levels of displacement damage due to Xe implantation, show a lower temperature threshold for He release than do pristine ZrN samples. (authors)

  9. Silicon Carbide Power Device Performance Under Heavy-Ion Irradiation

    Science.gov (United States)

    Lauenstein, Jean-Marie; Casey, Megan; Topper, Alyson; Wilcox, Edward; Phan, Anthony; Ikpe, Stanley; LaBel, Ken

    2015-01-01

    Heavy-ion induced degradation and catastrophic failure data for SiC power MOSFETs and Schottky diodes are examined to provide insight into the challenge of single-event effect hardening of SiC power devices.

  10. Low-energy X-ray and gamma spectrometry using silicon photodiodes; Espectrometria de raios X e gama de baixa energia utilizando fotodiodos de silicio

    Energy Technology Data Exchange (ETDEWEB)

    Silva, Iran Jose Oliveira da

    2000-08-01

    The use of semiconductor detectors for radiation detection has increased in recent years due to advantages they present in comparison to other types of detectors. As the working principle of commercially available photodiodes is similar to the semiconductor detector, this study was carried out to evaluate the use of Si photodiodes for low energy x-ray and gamma spectrometry. The photodiodes investigated were SFH-205, SFH-206, BPW-34 and XRA-50 which have the following characteristics: active area of 0,07 cm{sup 2} and 0,25 cm{sup 2}, thickness of the depletion ranging from 100 to 200 {mu}m and junction capacitance of 72 pF. The photodiode was polarized with a reverse bias and connected to a charge sensitive pre-amplifier, followed by a amplifier and multichannel pulse analyzer. Standard radiation source used in this experiment were {sup 241} Am, {sup 109} Cd, {sup 57} Co and {sup 133} Ba. The X-ray fluorescence of lead and silver were also measured through K- and L-lines. All the measurements were made with the photodiodes at room temperature.The results show that the responses of the photodiodes very linear by the x-ray energy and that the energy resolution in FWHM varied between 1.9 keV and 4.4 keV for peaks corresponding to 11.9 keV to 59 keV. The BPW-34 showed the best energy resolution and the lower dark current. The full-energy peak efficiency was also determined and it was observed that the peak efficiency decreases rapidly above 50 keV. The resolution and efficiency are similar to the values obtained with other semiconductor detectors, evidencing that the photodiodes used in that study can be used as a good performance detector for low energy X-ray and gamma spectrometry. (author)

  11. Heavy-ion irradiation induced diamond formation in carbonaceous materials

    International Nuclear Information System (INIS)

    Daulton, T. L.

    1999-01-01

    The basic mechanisms of metastable phase formation produced under highly non-equilibrium thermodynamic conditions within high-energy particle tracks are investigated. In particular, the possible formation of diamond by heavy-ion irradiation of graphite at ambient temperature is examined. This work was motivated, in part, by earlier studies which discovered nanometer-grain polycrystalline diamond aggregates of submicron-size in uranium-rich carbonaceous mineral assemblages of Precambrian age. It was proposed that the radioactive decay of uranium formed diamond in the fission particle tracks produced in the carbonaceous minerals. To test the hypothesis that nanodiamonds can form by ion irradiation, fine-grain polycrystalline graphite sheets were irradiated with 400 MeV Kr ions. The ion irradiated graphite (and unirradiated graphite control) were then subjected to acid dissolution treatments to remove the graphite and isolate any diamonds that were produced. The acid residues were then characterized by analytical and high-resolution transmission electron microscopy. The acid residues of the ion-irradiated graphite were found to contain ppm concentrations of nanodiamonds, suggesting that ion irradiation of bulk graphite at ambient temperature can produce diamond

  12. Structural response of titanate pyrochlores to swift heavy ion irradiation

    International Nuclear Information System (INIS)

    Shamblin, Jacob; Tracy, Cameron L.; Ewing, Rodney C.; Zhang, Fuxiang; Li, Weixing; Trautmann, Christina; Lang, Maik

    2016-01-01

    The structure, size, and morphology of ion tracks resulting from irradiation of five different pyrochlore compositions (A 2 Ti 2 O 7 , A = Yb, Er, Y, Gd, Sm) with 2.2 GeV 197 Au ions were investigated by means of synchrotron X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). Radiation-induced amorphization occurred in all five materials analyzed following an exponential rate as a function of ion fluence. XRD patterns showed a general trend of increasing susceptibility of amorphization with increasing ratio of A- to B-site cation ionic radii (r A /r B ) with the exception of Y 2 Ti 2 O 7 and Sm 2 Ti 2 O 7 . This indicates that the track size does not necessarily increase with r A /r B , in contrast with results from previous swift heavy ion studies on Gd 2 Zr 2-x Ti x O 7 pyrochlore materials. For Y 2 Ti 2 O 7 , this effect is attributed to the significantly lower electron density of this material relative to the lanthanide-bearing pyrochlores, thus lowering the electronic energy loss (dE/dx) of the high-energy ions in this composition. An energy loss normalization procedure was performed which reveals an initial increase of amorphous track size with r A /r B that saturates above a cation radius ratio larger than Gd 2 Ti 2 O 7 . This is in agreement with previous low-energy ion irradiation experiments and first principles calculations of the disordering energy of titanate pyrochlores indicating that the same trends in disordering energy apply to radiation damage induced in both the nuclear and electronic energy loss regimes. HRTEM images indicate that single ion tracks in Yb 2 Ti 2 O 7 and Er 2 Ti 2 O 7 , which have small A-site cations and low r A /r B , exhibit a core-shell structure with a small amorphous core surrounded by a larger disordered shell. In contrast, single tracks in Gd 2 Ti 2 O 7 and Sm 2 Ti 2 O 7 , have a larger amorphous core with minimal disordered shells.

  13. In-situ observation system for dual ion irradiation damage

    International Nuclear Information System (INIS)

    Furuno, Shigemi; Hojou, Kiichi; Otsu, Hitoshi; Sasaki, T.A.; Izui, Kazuhiko; Tukamoto, Tetsuo; Hata, Takao.

    1992-01-01

    We have developed an in-situ observation and analysis system during dual ion beam irradiation in an electron microscope. This system consists of an analytical electron microscope of JEM-4000FX type equipped with a parallel EELS and an EDS attachments and linked with two sets of ion accelerators of 40 kV. Hydrogen and helium dual-ion beam irradiation experiments were performed for SiC crystals. The result of dual-ion beam irradiation was compared with those of helium and hydrogen single ion irradiations. It is clearly seen that the dual-ion irradiation has the effect of suppressing bubble formation and growth in comparison with the case of single helium ion irradiation. (author)

  14. Ion irradiated graphite exposed to fusion-relevant deuterium plasma

    International Nuclear Information System (INIS)

    Deslandes, Alec; Guenette, Mathew C.; Corr, Cormac S.; Karatchevtseva, Inna; Thomsen, Lars; Ionescu, Mihail; Lumpkin, Gregory R.; Riley, Daniel P.

    2014-01-01

    Graphite samples were irradiated with 5 MeV carbon ions to simulate the damage caused by collision cascades from neutron irradiation in a fusion environment. The ion irradiated graphite samples were then exposed to a deuterium plasma in the linear plasma device, MAGPIE, for a total ion fluence of ∼1 × 10 24 ions m −2 . Raman and near edge X-ray absorption fine structure (NEXAFS) spectroscopy were used to characterize modifications to the graphitic structure. Ion irradiation was observed to decrease the graphitic content and induce disorder in the graphite. Subsequent plasma exposure decreased the graphitic content further. Structural and surface chemistry changes were observed to be greatest for the sample irradiated with the greatest fluence of MeV ions. D retention was measured using elastic recoil detection analysis and showed that ion irradiation increased the amount of retained deuterium in graphite by a factor of four

  15. Folding two dimensional crystals by swift heavy ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Ochedowski, Oliver; Bukowska, Hanna [Fakultät für Physik and CENIDE, Universität Duisburg-Essen, D-47048 Duisburg (Germany); Freire Soler, Victor M. [Fakultät für Physik and CENIDE, Universität Duisburg-Essen, D-47048 Duisburg (Germany); Departament de Fisica Aplicada i Optica, Universitat de Barcelona, E08028 Barcelona (Spain); Brökers, Lara [Fakultät für Physik and CENIDE, Universität Duisburg-Essen, D-47048 Duisburg (Germany); Ban-d' Etat, Brigitte; Lebius, Henning [CIMAP (CEA-CNRS-ENSICAEN-UCBN), 14070 Caen Cedex 5 (France); Schleberger, Marika, E-mail: marika.schleberger@uni-due.de [Fakultät für Physik and CENIDE, Universität Duisburg-Essen, D-47048 Duisburg (Germany)

    2014-12-01

    Ion irradiation of graphene, the showcase model of two dimensional crystals, has been successfully applied to induce various modifications in the graphene crystal. One of these modifications is the formation of origami like foldings in graphene which are created by swift heavy ion irradiation under glancing incidence angle. These foldings can be applied to locally alter the physical properties of graphene like mechanical strength or chemical reactivity. In this work we show that the formation of foldings in two dimensional crystals is not restricted to graphene but can be applied for other materials like MoS{sub 2} and hexagonal BN as well. Further we show that chemical vapour deposited graphene forms foldings after swift heavy ion irradiation while chemical vapour deposited MoS{sub 2} does not.

  16. Folding two dimensional crystals by swift heavy ion irradiation

    International Nuclear Information System (INIS)

    Ochedowski, Oliver; Bukowska, Hanna; Freire Soler, Victor M.; Brökers, Lara; Ban-d'Etat, Brigitte; Lebius, Henning; Schleberger, Marika

    2014-01-01

    Ion irradiation of graphene, the showcase model of two dimensional crystals, has been successfully applied to induce various modifications in the graphene crystal. One of these modifications is the formation of origami like foldings in graphene which are created by swift heavy ion irradiation under glancing incidence angle. These foldings can be applied to locally alter the physical properties of graphene like mechanical strength or chemical reactivity. In this work we show that the formation of foldings in two dimensional crystals is not restricted to graphene but can be applied for other materials like MoS 2 and hexagonal BN as well. Further we show that chemical vapour deposited graphene forms foldings after swift heavy ion irradiation while chemical vapour deposited MoS 2 does not

  17. Magnetic patterning by means of ion irradiation and implantation

    International Nuclear Information System (INIS)

    Fassbender, J.; McCord, J.

    2008-01-01

    A pure magnetic patterning by means of ion irradiation which relies on a local modification of the magnetic anisotropy of a magnetic multilayer structure has been first demonstrated in 1998. Since then also other magnetic properties like the interlayer exchange coupling, the exchange bias effect, the magnetic damping behavior and the saturation magnetization to name a few have also been demonstrated to be affected by ion irradiation or ion implantation. Consequently, all these effects can be used if combined with a masking technique or employing direct focused ion beam writing for a magnetic patterning and thus an imprinting of an artificial magnetic domain structure, which subsequently modifies the integral magnetization reversal behavior or the magnetization dynamics of the film investigated. The present review will summarize how ion irradiation and implantation can affect the magnetic properties by means of structural modifications. The main part will cover the present status with respect to the pure magnetic patterning of micro- and nano structures

  18. Ions irradiation on bi-layer coatings

    Science.gov (United States)

    Tessarolo, Enrico; Corso, Alain Jody; Böttger, Roman; Martucci, Alessandro; Pelizzo, Maria G.

    2017-09-01

    Future space missions will operate in very harsh and extreme environments. Optical and electronics components need to be optimized and qualified in view of such operational challenges. This work focuses on the effect of low alpha particles irradiation on coatings. Low energy He+ (4 keV and 16 keV) ions have been considered in order to simulate in laboratory the irradiation of solar wind (slow and fast components) alpha particles. Mono- and proper bi-layers coatings have been investigated. The experimental tests have been carried out changing doses as well as fluxes during the irradiation sessions. Optical characterization in the UV-VIS spectral range and superficial morphological analysis have performed prior and after irradiation.

  19. Standard Test Method for Application of Ionization Chambers to Assess the Low Energy Gamma Component of Cobalt-60 Irradiators Used in Radiation-Hardness Testing of Silicon Electronic Devices

    CERN Document Server

    American Society for Testing and Materials. Philadelphia

    2010-01-01

    1.1 Low energy components in the photon energy spectrum of Co-60 irradiators lead to absorbed dose enhancement effects in the radiation-hardness testing of silicon electronic devices. These low energy components may lead to errors in determining the absorbed dose in a specific device under test. This method covers procedures for the use of a specialized ionization chamber to determine a figure of merit for the relative importance of such effects. It also gives the design and instructions for assembling this chamber. 1.2 This method is applicable to measurements in Co-60 radiation fields where the range of exposure rates is 7 × 10 −6 to 3 × 10−2 C kg −1 s−1 (approximately 100 R/h to 100 R/s). For guidance in applying this method to radiation fields where the exposure rate is >100 R/s, see Appendix X1. Note 1—See Terminology E170 for definition of exposure and its units. 1.3 The values stated in SI units are to be regarded as the standard. The values given in parentheses are for information onl...

  20. Ion irradiation effect on metallic condensate adhesion to glass

    International Nuclear Information System (INIS)

    Kovalenko, V.V.; Upit, G.P.

    1984-01-01

    The ion irradiation effect on metallic condensate adhesion to glass is investigated. It has been found that in case of indium ion deposition the condensate adhesion to glass cleavages being in contact with atmosphere grows up to the level corresponding to a juvenile surface while in case of argon ion irradiation - exceeds it. It is shown that the observed adhesion growth is determined mainly by the surfwce modification comparising charge accumulation on surface, destruction of a subsurface layer and an interlayer formation in the condensate-substrate interface. The role of these factors in the course of various metals deposition is considered

  1. Amorphous molecular junctions produced by ion irradiation on carbon nanotubes

    International Nuclear Information System (INIS)

    Wang Zhenxia; Yu Liping; Zhang Wei; Ding Yinfeng; Li Yulan; Han Jiaguang; Zhu Zhiyuan; Xu Hongjie; He Guowei; Chen Yi; Hu Gang

    2004-01-01

    Experiments and molecular dynamics have demonstrated that electron irradiation could create molecular junctions between crossed single-wall carbon nanotubes. Recently molecular dynamics computation predicted that ion irradiation could also join single-walled carbon nanotubes. Employing carbon ion irradiation on multi-walled carbon nanotubes, we find that these nanotubes evolve into amorphous carbon nanowires, more importantly, during the process of which various molecular junctions of amorphous nanowires are formed by welding from crossed carbon nanotubes. It demonstrates that ion-beam irradiation could be an effective way not only for the welding of nanotubes but also for the formation of nanowire junctions

  2. Irradiation effects and diffusion of fission products (cesium and iodine) in silicon carbide; Effets d'irradiation et diffusion des produits de fission (cesium et iode) dans le carbure de silicium

    Energy Technology Data Exchange (ETDEWEB)

    Audren, A

    2007-03-15

    Silicon carbide is envisaged as a cladding material for the nuclear fuel in the fourth generation reactors. The aim of this work is to study the capacity to retain fission products and the structure evolution of this material under the combined effects of temperature and irradiation. The low energy ion implantations and the incorporation of stable analogues of fission products (Cs and I) in single crystalline 6H-SiC samples were performed by using the ion implanter or the accelerator of the CSNSM. The high energy heavy ion irradiations were made at GANIL. The evolution of the implanted ion profiles and the crystal structure were studied by RBS and Channeling. Complementary information were obtained by using the UV-visible absorption spectroscopy. The low energy ion implantations at room temperature induce a fast structural damage in the crystal. On the other hand, it is possible to attain a small disorder rate in the crystal during implantation by increasing the implantation temperature (600 C). The high energy heavy ion irradiations do not damage the SiC crystals. On the contrary, they cause an annealing of the disorder created by the low energy implantations. The implanted ions (I) do not diffuse during low or high energy ion irradiations at room temperature and at 600 C. However, a diffusion of Cs ions was observed during a post-implantation annealing at 1300 C. At this temperature, the crystal which had an extended amorphous layer starts to recover a single-crystal structure. (author)

  3. Low energy supersymmetry phenomenology

    International Nuclear Information System (INIS)

    Baer, H.; Chen, C.H.; Gunion, J.; Kamon, T.; Lopez, J.L.; Kao, C.

    1995-04-01

    The authors summarize the current status and future prospects for low energy (weak scale) supersymmetry. In particular, they evaluate the capabilities of various e + e - , p bar p and pp colliders to discover evidence for supersymmetric particles. Furthermore, assuming supersymmetry is discovered, they discuss capabilities of future facilities to disentangle the anticipated spectrum of super-particles, and, via precision measurements, to test mass and coupling parameters for comparison with various theoretical expectations. The authors then comment upon the complementarity of proposed hadron and e + e - machines for a comprehensive study of low energy supersymmetry

  4. Low energy supersymmetry phenomenology

    CERN Document Server

    Baer, H.; Chen, C.H.; Eberl, H.; Feng, J.L.; Fujii, K.; Gunion, John F.; Kamon, T.; Kao, C.; Lopez, J.L.; Majerotto, W.; McIntyre, P.; Munroe, Ray B.; Murayama, H.; Paige, F.; Porod, W.; Sender, J.; Sopczak, A.; Tata, X.; Tsukamoto, T.; White, J.

    1996-01-01

    We summarize the current status and future prospects for low energy (weak scale) supersymmetry. In particular, we evaluate the capabilities of various e^+e^-, p\\bar p and pp colliders to discover evidence for supersymmetric particles. Furthermore, assuming supersymmetry is discovered, we discuss capabilities of future facilities to dis-entangle the anticipated spectrum of super-particles and, via precision measurements, to test mass and coupling parameters for comparison with various theoretical expectations. We comment upon the complementarity of proposed hadron and e^+e^- machines for a comprehensive study of low energy supersymmetry.

  5. Anisotropic dewetting of ion irradiated solid films

    Energy Technology Data Exchange (ETDEWEB)

    Repetto, L., E-mail: luca.repetto@unige.it [Dipartimento di fisica, Università di Genova, Via Dodecaneso 33, 16146 Genova (Italy); Šetina Batič, B. [Inštitut Za Kovinske Materiale in Tehnologije, Lepi pot 11, 1000 Ljubljana (Slovenia); Firpo, G.; Piano, E.; Valbusa, U. [Dipartimento di fisica, Università di Genova, Via Dodecaneso 33, 16146 Genova (Italy)

    2013-11-15

    Experiments of irradiation with 30 keV Ga ions were conducted on ultrathin chromium films on rippled silicon substrates. The evolution of their surface morphology, as detected by real time scanning electron microscopy, shows an apparent differential sputtering yield for regions of positive and negative curvature which is in contrast with the standard theory for curvature depending sputtering yield. In particular, at the end of the irradiation process, chromium wires are left in the valleys of the substrate. This result was explained in terms of local melting caused by the ion impact and of a process of dewetting under the concurring actions of surface tension and Van der Waals forces while ion sputtering is active. The interpretation of the reported experimental results are fully supported by numeric simulations implementing the same continuum model used to explain ion induced spinodal dewetting. This hierarchical self-organization process breaks the symmetry of previously demonstrated ion induced dewetting, making possible to create new structures by using the same fundamental effects.

  6. Low-energy QCD

    International Nuclear Information System (INIS)

    Ecker, G.

    1995-11-01

    After a brief introduction to chiral perturbation theory, the effective field theory of the standard model at low energies, two recent applications are reviewed: elastic pion-pion scattering to two-loop accuracy and the complete renormalized pion-nucleon Lagrangian to O(P 3 ) in the chiral expansion. (author)

  7. Low energy particle composition

    International Nuclear Information System (INIS)

    Gloeckler, G.

    1975-01-01

    More than 50 papers presented at this Conference dealt with the composition of low energy particles. The topics can be divided roughly into two broad categories. The first is the study of the energy spectra and composition of the steady or 'quiet-time' particle flux, whose origin is at this time unknown. The second category includes the study of particles and photons which are associated with solar flares or active regions on the sun. (orig.) [de

  8. Strong out-of-plane magnetic anisotropy in ion irradiated anatase TiO2 thin films

    Directory of Open Access Journals (Sweden)

    M. Stiller

    2016-12-01

    Full Text Available The temperature and field dependence of the magnetization of epitaxial, undoped anatase TiO2 thin films on SrTiO3 substrates was investigated. Low-energy ion irradiation was used to modify the surface of the films within a few nanometers, yet with high enough energy to produce oxygen and titanium vacancies. The as-prepared thin film shows ferromagnetism which increases after irradiation with low-energy ions. An optimal and clear magnetic anisotropy was observed after the first irradiation, opposite to the expected form anisotropy. Taking into account the experimental parameters, titanium vacancies as di-Frenkel pairs appear to be responsible for the enhanced ferromagnetism and the strong anisotropy observed in our films. The magnetic impurities concentrations was measured by particle-induced X-ray emission with ppm resolution. They are ruled out as a source of the observed ferromagnetism before and after irradiation.

  9. Mechanical properties of MeV ion-irradiated SiC/SiC composites characterized by indentation technique

    International Nuclear Information System (INIS)

    Park, J.Y.; Park, K.H.; Kim, W.; Kishimoto, H.; Kohyama, A.

    2007-01-01

    Full text of publication follows: SiC/SiC composites have been considered as a structural material for advanced fusion concepts. In the core of fusion reactor, those SiC/SiC composites are experienced the complex attacks such as strong neutron, high temperature and transmuted gases. One of the vital data for designing the SiC/SiC composites to the fusion reactor is mechanical properties under the severe neutron irradiation. In this work, various SiC/SiC composites were prepared by the different fabrication processes like CVI (chemical vapor infiltration), WA-CVI (SiC whisker assisted CVI) and hot-pressed method. The expected neutron irradiation was simulated by a silicon self-ion irradiation at a DuET facility; Dual-beam for Energy Technologies, Kyoto University. The irradiation temperature were 600 deg. C and 1200 deg. C, and the irradiation does were 5 dpa and 20 dpa, respectively. The 5.1 MeV Si ions were irradiated to the intrinsic CVI-SiC, SiC whisker reinforced SiC and SiC composites produced by hot-press method. The mechanical properties like hardness, elastic modulus and fracture toughness were characterized by an indentation technique. The ion irradiation caused the increase of the hardness and fracture toughness, which was dependent on the irradiation temperature. SiC whisker reinforcement in the SiC matrix accelerated the increase of the fracture toughness by the ion irradiation. For SiC/SiC composites after the ion irradiation, this work will provide the additional data for the mechanical properties as well as the effect of SiC whisker reinforcement. (authors)

  10. Ion-irradiation-induced defects in bundles of carbon nanotubes

    International Nuclear Information System (INIS)

    Salonen, E.; Krasheninnikov, A.V.; Nordlund, K.

    2002-01-01

    We study the structure and formation yields of atomic-scale defects produced by low-dose Ar ion irradiation in bundles of single-wall carbon nanotubes. For this, we employ empirical potential molecular dynamics and simulate ion impact events over an energy range of 100-1000 eV. We show that the most common defects produced at all energies are vacancies on nanotube walls, which at low temperatures are metastable but long-lived defects. We further calculate the spatial distribution of the defects, which proved to be highly non-uniform. We also show that ion irradiation gives rise to the formations of inter-tube covalent bonds mediated by carbon recoils and nanotube lattice distortions due to dangling bond saturation. The number of inter-tube links, as well as the overall damage, linearly grows with the energy of incident ions

  11. Experimental modeling of high burn-up structure in SIMFUEL with ion irradiation

    International Nuclear Information System (INIS)

    Baranov, V.; Isaenkova, M.; Lunev, A.; Tenishev, A.; Khlunov, A.

    2013-01-01

    Experiments are conducted to simulate high burn-up structure in accelerator conditions. Three ion irradiation schemes are used: 1. Xe 27+ 160 MeV up to 5x10 15 cm -2 (thermal spikes). 2. Xe 16+ 320 keV up to 1x10 17 cm -2 (collision cascades). 3. He + 20 keV up to 5,5x10 17 cm -2 (implantation stage). Structural characterization performed by scanning electron microscopy, X-ray analysis and atomic force microscopy revealed prominent grain refinement in case of Xe 27+ irradiation. Artificial energy variation for incident ions showed varying size of subgrains. At maximum energy of incident ions, subgrain size amounts ∼ 320 nm. Moving to the edge of irradiated region changes the size to ∼ 170 nm. Typical size of coherent scattering regions matches subgrain size for high-energy irradiation. Low-energy irradiation results in less significant structural changes: flaky structure at random sites for samples irradiated with low-energy xenon ions and bubble nucleation for helium irradiation. Dislocation density increases significantly, and it is shown that a single fluence dependence exists for low- and high-energy irradiation. (authors)

  12. Using ion irradiation to make high-Tc Josephson junctions

    International Nuclear Information System (INIS)

    Bergeal, N.; Lesueur, J.; Sirena, M.; Faini, G.; Aprili, M.; Contour, J. P.; Leridon, B.

    2007-01-01

    In this article we describe the effect of ion irradiation on high-T c superconductor thin film and its interest for the fabrication of Josephson junctions. In particular, we show that these alternative techniques allow to go beyond most of the limitations encountered in standard junction fabrication methods, both in the case of fundamental and technological purposes. Two different geometries are presented: a planar one using a single high-T c film and a mesa one defined in a trilayer structure

  13. Low Energy Conference 2009

    Energy Technology Data Exchange (ETDEWEB)

    2009-07-01

    11 of the 19 presentations have been indexed for the database. The following national organisations jointly organised the Low-energy Conference 2009: The Norwegian Society for the Conservation of Nature, the Norwegian Society of Engineers and Technologists, Norwegian Technology, the Federation of Norwegian Industries and the Low-Energy Program. Energy efficiency is often given little attention in the ongoing debates concerning different initiatives in order to reduce greenhouse emissions. The aim of the conference was to set energy efficiency on the agenda as an important environmental instrument. Both the Intergovernmental Panel on Climate Change - IPCC and the International Energy Agency - IEA regard energy efficiency as one of the fastest and most effective ways of reducing greenhouse emissions. Despite of this little is done. Many countries are ahead of Norway - why are we lagging behind? The Low-Energy conference has a broad approach: Nigel Jollands from the International Energy Agency -IEA puts energy efficiency in a global perspective. Soeren Rise from Teqniq in Denmark informs about the Danes' energy saving agreement, which appears to have been a success. The conference increased the competencies on concrete energy efficiency solutions, how to speed up the marketing of energy-friendly buildings and technologies, possibilities through industry and the impact of EU-directives and other instruments in order to trigger the potential. The conference closed with a discussion panel of leading energy politicians. The conference contributed to raise the debate in advance of the General election in Norway and the climate negotiations in Copenhagen during the autumn 2009. (EW)

  14. Low Energy Nuclear Reactions?

    CERN Multimedia

    CERN. Geneva; Faccini, R.

    2014-01-01

    After an introduction to the controversial problem of Low Energy Nuclear Reactions (LENR) catalyzed by neutrons on metallic hydride surfaces we present the results of an experiment, made in collaboration with ENEA Labs in Frascati, to search neutrons from plasma discharges in electrolytic cells. The negative outcome of our experiment goes in the direction of ruling out those theoretical models expecting LENR to occur in condensed matter systems under specific conditions. Our criticism on the theoretical foundations of such models will also be presented.

  15. Extra Low ENergy Antiproton

    CERN Multimedia

    To produce dense antiproton beams at very low energies (110 keV), it has been proposed to install a small decelerator ring between the existing AD ring and the experimental area. Phase-space blowup during deceleration is compensated by electron cooling such that the final emittances are comparable to the 5MeV beam presently delivered by the AD. An immediate consequence is a significant increase in the number of trapped antiprotons at the experiments as outlined in the proposal CERN/SPSC-2009-026; SPCS-P-338. This report describes the machine parameters and layout of the proposal ELENA (Extra Low ENergy Antiproton)ring also gives an approximate estimate of cost and manpower needs. Since the initial estimate, published in 2007 (CERN-AB-2007-079), the ELENA design has evolved considerably. This is due to a new location in the AD hall to acommodate for the possibility of another experimental zone, as suggested by the SPCS, and also due to improvements in the ring optics and layout. The cost estimate that is prese...

  16. Surface functionalization of epitaxial graphene on SiC by ion irradiation for gas sensing application

    International Nuclear Information System (INIS)

    Kaushik, Priya Darshni; Ivanov, Ivan G.; Lin, Pin-Cheng; Kaur, Gurpreet; Eriksson, Jens; Lakshmi, G.B.V.S.; Avasthi, D.K.; Gupta, Vinay; Aziz, Anver; Siddiqui, Azher M.; Syväjärvi, Mikael; Yazdi, G. Reza

    2017-01-01

    Highlights: • For the first time the gas sensing application of SHI irradiated epitaxial graphene on SiC is explored. • Surface morphology of irradiated graphene layers showed graphene folding, hillocks, and formation of wrinkles. • Existence of an optimal fluence which maximize the gas sensing response towards NO_2 and NH_3 gases. - Abstract: In this work, surface functionalization of epitaxial graphene grown on silicon carbide was performed by ion irradiation to investigate their gas sensing capabilities. Swift heavy ion irradiation using 100 MeV silver ions at four varying fluences was implemented on epitaxial graphene to investigate morphological and structural changes and their effects on the gas sensing capabilities of graphene. Sensing devices are expected as one of the first electronic applications using graphene and most of them use functionalized surfaces to tailor a certain function. In our case, we have studied irradiation as a tool to achieve functionalization. Morphological and structural changes on epitaxial graphene layers were investigated by atomic force microscopy, Raman spectroscopy, Raman mapping and reflectance mapping. The surface morphology of irradiated graphene layers showed graphene folding, hillocks, and formation of wrinkles at highest fluence (2 × 10"1"3 ions/cm"2). Raman spectra analysis shows that the graphene defect density is increased with increasing fluence, while Raman mapping and reflectance mapping show that there is also a reduction of monolayer graphene coverage. The samples were investigated for ammonia and nitrogen dioxide gas sensing applications. Sensors fabricated on pristine and irradiated samples showed highest gas sensing response at an optimal fluence. Our work provides new pathways for introducing defects in controlled manner in epitaxial graphene, which can be used not only for gas sensing application but also for other applications, such as electrochemical, biosensing, magnetosensing and spintronic

  17. Surface functionalization of epitaxial graphene on SiC by ion irradiation for gas sensing application

    Energy Technology Data Exchange (ETDEWEB)

    Kaushik, Priya Darshni, E-mail: kaushik.priyadarshni@gmail.com [Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping (Sweden); Department of Physics, Jamia Millia Islamia, New Delhi, 110025 (India); Ivanov, Ivan G.; Lin, Pin-Cheng [Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping (Sweden); Kaur, Gurpreet [Department of Physics and Astrophysics, University of Delhi, Delhi, 110007 (India); Eriksson, Jens [Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping (Sweden); Lakshmi, G.B.V.S. [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi, 110067 (India); Avasthi, D.K. [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi, 110067 (India); Amity Institute of Nanotechnology, Noida 201313 (India); Gupta, Vinay [Department of Physics and Astrophysics, University of Delhi, Delhi, 110007 (India); Aziz, Anver; Siddiqui, Azher M. [Department of Physics, Jamia Millia Islamia, New Delhi, 110025 (India); Syväjärvi, Mikael [Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping (Sweden); Yazdi, G. Reza, E-mail: yazdi@ifm.liu.se [Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping (Sweden)

    2017-05-01

    Highlights: • For the first time the gas sensing application of SHI irradiated epitaxial graphene on SiC is explored. • Surface morphology of irradiated graphene layers showed graphene folding, hillocks, and formation of wrinkles. • Existence of an optimal fluence which maximize the gas sensing response towards NO{sub 2} and NH{sub 3} gases. - Abstract: In this work, surface functionalization of epitaxial graphene grown on silicon carbide was performed by ion irradiation to investigate their gas sensing capabilities. Swift heavy ion irradiation using 100 MeV silver ions at four varying fluences was implemented on epitaxial graphene to investigate morphological and structural changes and their effects on the gas sensing capabilities of graphene. Sensing devices are expected as one of the first electronic applications using graphene and most of them use functionalized surfaces to tailor a certain function. In our case, we have studied irradiation as a tool to achieve functionalization. Morphological and structural changes on epitaxial graphene layers were investigated by atomic force microscopy, Raman spectroscopy, Raman mapping and reflectance mapping. The surface morphology of irradiated graphene layers showed graphene folding, hillocks, and formation of wrinkles at highest fluence (2 × 10{sup 13} ions/cm{sup 2}). Raman spectra analysis shows that the graphene defect density is increased with increasing fluence, while Raman mapping and reflectance mapping show that there is also a reduction of monolayer graphene coverage. The samples were investigated for ammonia and nitrogen dioxide gas sensing applications. Sensors fabricated on pristine and irradiated samples showed highest gas sensing response at an optimal fluence. Our work provides new pathways for introducing defects in controlled manner in epitaxial graphene, which can be used not only for gas sensing application but also for other applications, such as electrochemical, biosensing, magnetosensing and

  18. Low-energy ion irradiation in HiPIMS to enable anatase TiO2 selective growth

    Science.gov (United States)

    Cemin, Felipe; Tsukamoto, Makoto; Keraudy, Julien; Antunes, Vinícius Gabriel; Helmersson, Ulf; Alvarez, Fernando; Minea, Tiberiu; Lundin, Daniel

    2018-06-01

    High power impulse magnetron sputtering (HiPIMS) has already demonstrated great potential for synthesizing the high-energy crystalline phase of titanium dioxide (rutile TiO2) due to large quantities of highly energetic ions present in the discharge. In this work, it is shown that the metastable anatase phase can also be obtained by HiPIMS. The required deposition conditions have been identified by systematically studying the phase formation, microstructure and chemical composition as a function of mode of target operation as well as of substrate temperature, working pressure, and peak current density. It is found that films deposited in the metal and transition modes are predominantly amorphous and contain substoichiometric TiO x compounds, while in compound mode they are well-crystallized and present only O2‑ ions bound to Ti4+, i.e. pure TiO2. Anatase TiO2 films are obtained for working pressures between 1 and 2 Pa, a peak current density of ~1 A cm‑2 and deposition temperatures lower than 300 °C. Rutile is favored at lower pressures (2 A cm‑2), while amorphous films are obtained at higher pressures (5 Pa). Microstructural characterization of selected films is also presented.

  19. Temperature Dependent Surface Modification of Tungsten Exposed to High-Flux Low-Energy Helium Ion Irradiation

    OpenAIRE

    Damico, Antony Q; Tripathi, Jitendra K; Novakowski, Theodore J; Miloshevsky, Gennady; Hassanein, Ahmed

    2016-01-01

    Nuclear fusion is a great potential energy source that can provide a relatively safe and clean limitless supply of energy using hydrogen isotopes as fuel material. ITER (international thermonuclear experimental reactor) is the world first fusion reactor currently being built in France. Tungsten (W) is a prime candidate material as plasma facing component (PFC) due to its excellent mechanical properties, high melting point, and low erosion rate. However, W undergoes a severe surface morphology...

  20. Ion irradiation enhanced crystal nucleation in amorphous Si thin films

    International Nuclear Information System (INIS)

    Im, J.S.; Atwater, H.A.

    1990-01-01

    The nucleation kinetics of the amorphous-to-crystal transition of Si films under 1.5 MeV Xe + irradiation have been investigated by means of in situ transmission electron microscopy in the temperature range T=500--580 degree C. After an incubation period during which negligible nucleation occurs, a constant nucleation rate was observed in steady state, suggesting that homogeneous nucleation occurred. Compared to thermal crystallization, a significant enhancement in the nucleation rate during high-energy ion irradiation (five to seven orders of magnitude) was observed with an apparent activation energy of 3.9±0.75 eV

  1. Switching the uniaxial magnetic anisotropy by ion irradiation induced compensation

    Science.gov (United States)

    Yuan, Ye; Amarouche, Teyri; Xu, Chi; Rushforth, Andrew; Böttger, Roman; Edmonds, Kevin; Campion, Richard; Gallagher, Bryan; Helm, Manfred; Jürgen von Bardeleben, Hans; Zhou, Shengqiang

    2018-04-01

    In the present work, the uniaxial magnetic anisotropy of GaMnAsP is modified by helium ion irradiation. According to the micro-magnetic parameters, e.g. resonance fields and anisotropy constants deduced from ferromagnetic resonance measurements, a rotation of the magnetic easy axis from out-of-plane [0 0 1] to in-plane [1 0 0] direction is achieved. From the application point of view, our work presents a novel avenue in modifying the uniaxial magnetic anisotropy in GaMnAsP with the possibility of lateral patterning by using lithography or focused ion beam.

  2. Disintegration of C60 by Xe ion irradiation

    International Nuclear Information System (INIS)

    Kalish, R.; Samoiloff, A.; Hoffman, A.; Uzan-Saguy, C.

    1993-01-01

    The Changes in resistivity of fullerene (C 60 ) films subject to 320 keV Xe ion irradiation are investigated as a function of ion dose. From a comparison of this dependence with similar data on other Xe irradiated C containing insulating materials and with data on C implanted fused quartz, it is concluded that upon ion impact C 60 clusters completely disintegrate. This disintegration releases about 60 C atoms which disperse amongst the remaining intact C 60 spheres giving rise to hopping conductivity between isolated C atoms. 16 refs., 3 figs

  3. Effect of heavy ion irradiation on C 60

    Science.gov (United States)

    Lotha, S.; Ingale, A.; Avasthi, D. K.; Mittal, V. K.; Mishra, S.; Rustagi, K. C.; Gupta, A.; Kulkarni, V. N.; Khathing, D. T.

    1999-06-01

    Thin films of C 60 were subjected to swift heavy ion irradiation spanning the region from 2 to 11 keV/nm of electronic excitation. Studies of the irradiated films by Raman spectroscopy indicated polymerization and damage of the film with an ion fluence. The ion track radii are estimated for various ions using the Raman data. Photoluminescence spectroscopy of the irradiated film indicated a decrease in the C 60 phase with a dose, and an increase in the intensity at the 590 nm wavelength, which is attributed to an increase in the oxygen content.

  4. The effect of ion irradiation on inert gas bubble mobility

    International Nuclear Information System (INIS)

    Alexander, D.E.; Birtcher, R.C.

    1991-09-01

    The effect of Al ion irradiation on the mobility of Xe gas bubbles in Al thin films was investigated. Transmission electron microscopy was used to determine bubble diffusivities in films irradiated and/or annealed at 673K, 723K and 773K. Irradiation increased bubble diffusivity by a factor of 2--9 over that due to thermal annealing alone. The Arrhenius behavior and dose rate dependence of bubble diffusivity are consistent with a radiation enhanced diffusion phenomenon affecting a volume diffusion mechanism of bubble transport. 9 refs., 3 figs., 2 tabs

  5. Inside bluetooth low energy

    CERN Document Server

    Gupta, Naresh

    2013-01-01

    Bluetooth Low Energy (LE) is one of the latest enhancement to Bluetooth technology and, as the name suggests, it is aimed at ultra low power devices, such as heart rate monitors, thermometers, and sensors. Due to very low power consumption, devices compliant with this standard can operate for several years on coin cell batteries without the need for recharging. This cutting-edge book helps you understand the whats , whys , and hows of Bluetooth LE. It includes a broad view of the technology, identifies the various building blocks, and explains how they come together. You also find discussions on Bluetooth basics, providing the background information needed to master Bluetooth LE.The book explains the architecture of Bluetooth LE stack and the functionality provided by each of the layers. You find expert guidance in setting up your own system in a quick and efficient manner with inexpensive, easily available hardware and just a couple of PCs running Linux. This unique volume features two chapters that are dedi...

  6. Solar low energy dwellings

    International Nuclear Information System (INIS)

    Hestnes, Anne Grete

    2000-01-01

    By now, a lot has been learnt about how to reduce energy use in dwellings using solar and low energy technologies, and many good examples can be found throughout Europe. Still, they are not quite the common feature we would expect them to be, i.e. they have not really penetrated the market. The reason for this is in part a result of the fact that the designers and developers of these buildings have not looked at what the market wants and needs, but rather at how to use a set of given technologies. The buildings are the result of a technology push rather than a market pull and have therefore, often, been detached or semidetached dwellings with different solar technologies added on in less than optimal ways. In order to increase market penetration, it is time to look at the market trends and relate to these. Fortunately, quite a few European architects have realized this and have started designing somewhat different residential buildings. The paper focuses on examples of the new trends in solar residential architecture and by that, hopefully, it shows that we are on the right track. (au)

  7. Very low energy geothermics

    International Nuclear Information System (INIS)

    Anon.

    1995-01-01

    Very low energy geothermics correspond to temperatures below 30 C and has been developed to cover heating and cooling needs of recent individual houses or tertiary industries using heat pumps and low depth aquifers (<100 m). Geothermal heat pumps industry has made great strides in European Northern countries, China, Japan and the United States of America. Geothermal heat pumps are less energy consuming than air heat pumps and require less cooling fluid and maintenance. The Aquapac procedure has been developed in France in 1983 by the AFME (French Energy Control Agency), EdF and the BRGM (Geologic and Mining Research Office) to encourage the use of geothermal heat pump for domestic and sanitary water heating and to make a survey of low-depth aquifers in the whole french territory. The decay of energy costs that started in 1986 has led to a loss of interest for the Aquapac procedure, even in the tertiary industries for which the air-conditioning demand is growing up. (J.S.). 1 tab

  8. 75 MeV boron ion irradiation studies on Si PIN photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    Prabhakara Rao, Y.P.; Praveen, K.C. [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore 570006 (India); Rejeena Rani, Y. [Integrated Circuits Division, Bharat Electronics Limited, Bangalore 560013, Karnataka (India); Tripathi, Ambuj [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Gnana Prakash, A.P., E-mail: gnanap@hotmail.com [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore 570006 (India)

    2013-12-01

    The highly sensitive silicon PIN photodiodes were fabricated to use in radiation environments. The Si PIN photodiodes are coated with 150 nm silicon dioxide (SiO{sub 2}) as anti-reflective (AR) coating. The presence of AR coating on the performance of irradiated PIN photodiodes is studied up to a total dose of 10 Mrad. The effects of 75 MeV boron (B{sup 5+}) ions and {sup 60}Co gamma radiation on the I–V, C–V and spectral responses of PIN photodiodes were studied systematically to understand the radiation tolerance of the devices. The 75 MeV B{sup 5+} irradiation results are compared with {sup 60}Co gamma irradiated results in the same dose range for 1 mm × 1 mm and 10 mm × 10 mm active area PIN photodiodes. The irradiation results show that the ion irradiated PIN photodiodes show more degradation when compared {sup 60}Co gamma irradiated devices. The irradiation results are presented in this paper and the possible mechanism behind the degradation of photodiodes is also discussed in the paper.

  9. AFM studies on heavy ion irradiated YBCO single crystals

    International Nuclear Information System (INIS)

    Lakhani, Archana; Marhas, M.K.; Saravanan, P.; Ganesan, V.; Srinivasan, R.; Kanjilal, D.; Mehta, G.K.; Elizabeth, Suja; Bhat, H.L.

    2000-01-01

    Atomic Force Microscopy (AFM) is extensively used to characterise the surface morphology of high energy ion irradiated single crystals of high temperature superconductor - YBCO. Our earlier systematic studies on thin films of YBCO under high energy and heavy ion irradiation shows clear evidence of ion induced sputtering or erosion, even though the effect is more on the grain boundaries. These earlier results were supported by electrical resistance measurements. In order to understand more clearly, the nature of surface modification at these high energies, AFM studies were carried out on single crystals of YBCO. Single crystals were chosen in order to see the effect on crystallites alone without interference from grain boundaries. 200 MeV gold ions were used for investigation using the facilities available at Nuclear Science Centre, New Delhi. The type of ion and the range of energies were chosen to meet the threshold for electronically mediated defect production. The results are in conformity with our earlier studies and will be described in detail in the context of electronic energy loss mediated sputtering or erosion. (author)

  10. Enhanced defects recombination in ion irradiated SiC

    International Nuclear Information System (INIS)

    Izzo, G.; Litrico, G.; Grassia, F.; Calcagno, L.; Foti, G.

    2010-01-01

    Point defects induced in SiC by ion irradiation show a recombination at temperatures as low as 320 K and this process is enhanced after running current density ranging from 80 to 120 A/cm 2 . Ion irradiation induces in SiC the formation of different defect levels and low-temperature annealing changes their concentration. Some levels (S 0 , S x and S 2 ) show a recombination and simultaneously a new level (S 1 ) is formed. An enhanced recombination of defects is besides observed after running current in the diode at room temperature. The carriers introduction reduces the S 2 trap concentration, while the remaining levels are not modified. The recombination is negligible up to a current density of 50 A/cm 2 and increases at higher current density. The enhanced recombination of the S 2 trap occurs at 300 K, which otherwise requires a 400 K annealing temperature. The process can be related to the electron-hole recombination at the associated defect.

  11. Evaluation of Ion Irradiation Behavior of ODS Alloys

    Energy Technology Data Exchange (ETDEWEB)

    Jang, Jin Sung; Kim, Min Chul; Hong, Jun Hwa; Han, Chang Hee; Chang, Young Mun; Bae, Chang Soo; Bae, Yoon Young; Chang, Moon Hee

    2006-08-15

    FM steel (Grade 92) and ODS alloy(MA956) specimens were ion irradiated with 122 MeV Ne ions. Irradiation temperatures were about 450 and 550 .deg. C and the peak dose was 1, 5, and 10 dpa. Cross-sectional TEM samples were prepared by the electrolytic Ni-plating after pre-treatment of the irradiated specimens. Irradiation cavities in FM steel and ODS alloy specimens were not much different in size; about 20 nm in diameter in both specimens irradiated at around 450 .deg. C. However, the size distribution of cavities in FM steel specimens was broader than that in ODS alloy specimen, indicating that the cavity growth probably via coalescence). It was noticeable that the location and the preferential growth of the cavities in FM steel specimens: cavities on the PAGB (prior austenite grain boundary) was significantly larger than those within the grains. This could be an important issue for the mechanical properties, especially high temperature creep, fracture toughness, and so on. The dependency of the dose threshold and swelling on the ratio of the inert gas concentration/dpa was analysed for the various irradiation source, including He, Ne, Fe/He, and fast neutron, and the empirical correlation was established.

  12. Thermal stability of low dose Ga+ ion irradiated spin valves

    International Nuclear Information System (INIS)

    Qi Xianjin; Wang Yingang; Zhou Guanghong; Li Ziquan

    2009-01-01

    The thermal stability of low dose Ga + ion irradiated spin valves has been investigated and compared with that of the as-prepared ones. The dependences of exchange field, measured using vibrating sample magnetometer at room temperature, on magnetic field sweep rate and time spent at negative saturation of the pinned ferromagnetic layer, and training effect were explored. The training effect is observed on both the irradiated spin valves and the as-prepared ones. The magnetic field sweep rate dependence of the exchange bias field of the irradiated spin valves is nearly the same as that of the as-prepared ones. For the as-prepared structure thermal activation has been observed, which showed that holding the irradiated structure at negative saturation of the pinned ferromagnetic layer for up to 28 hours results in no change in the exchange field. The results indicate that the thermal stability of the ion irradiated spin valves is the same as or even better than the as-prepared ones.

  13. Effect of heavy ion irradiation on sucrose radical production

    International Nuclear Information System (INIS)

    Nakagawa, Kouichi; Sato, Yukio

    2004-01-01

    We investigated sucrose radicals produced by heavy-ion irradiation with various LETs (linear energy transfer) and the possibility for a sucrose ESR (electron spin resonance) dosimeter. The obtained spectral pattern was the same as that for helium (He) ions, carbon (C) ions, neon (Ne) ions, argon (Ar) ions, and iron (Fe) ions. Identical spectra were measured after one year, but the initial intensities decreased by a few percent when the samples were kept in ESR tubes with the caps at ambient temperature. The total spin concentration obtained by heavy-ion irradiation had a linear relation with the absorbed dose, and correlated logarithmically with the LET. Qualitative ESR analyses showed that the production of sucrose radicals depended on both the particle identity and the LET at the same dose. The production of spin concentration by He ions was the most sensitive to LET. Empirical relations between the LET and the spin yield for various particles imply that the LET at a certain dose can be estimated by the spin concentration. (authors)

  14. Evaluation of Ion Irradiation Behavior of ODS Alloys

    International Nuclear Information System (INIS)

    Jang, Jin Sung; Kim, Min Chul; Hong, Jun Hwa; Han, Chang Hee; Chang, Young Mun; Bae, Chang Soo; Bae, Yoon Young; Chang, Moon Hee

    2006-08-01

    FM steel (Grade 92) and ODS alloy(MA956) specimens were ion irradiated with 122 MeV Ne ions. Irradiation temperatures were about 450 and 550 .deg. C and the peak dose was 1, 5, and 10 dpa. Cross-sectional TEM samples were prepared by the electrolytic Ni-plating after pre-treatment of the irradiated specimens. Irradiation cavities in FM steel and ODS alloy specimens were not much different in size; about 20 nm in diameter in both specimens irradiated at around 450 .deg. C. However, the size distribution of cavities in FM steel specimens was broader than that in ODS alloy specimen, indicating that the cavity growth probably via coalescence). It was noticeable that the location and the preferential growth of the cavities in FM steel specimens: cavities on the PAGB (prior austenite grain boundary) was significantly larger than those within the grains. This could be an important issue for the mechanical properties, especially high temperature creep, fracture toughness, and so on. The dependency of the dose threshold and swelling on the ratio of the inert gas concentration/dpa was analysed for the various irradiation source, including He, Ne, Fe/He, and fast neutron, and the empirical correlation was established

  15. Corrosion characteristics of Hastelloy N alloy after He+ ion irradiation

    International Nuclear Information System (INIS)

    Lin Jianbo; Yu Xiaohan; Li Aiguo; He Shangming; Cao Xingzhong; Wang Baoyi; Li Zhuoxin

    2014-01-01

    With the goal of understanding the invalidation problem of irradiated Hastelloy N alloy under the condition of intense irradiation and severe corrosion, the corrosion behavior of the alloy after He + ion irradiation was investigated in molten fluoride salt at 700 °C for 500 h. The virgin samples were irradiated by 4.5 MeV He + ions at room temperature. First, the virgin and irradiated samples were studied using positron annihilation lifetime spectroscopy (PALS) to analyze the influence of irradiation dose on the vacancies. The PALS results showed that He + ion irradiation changed the size and concentration of the vacancies which seriously affected the corrosion resistance of the alloy. Second, the corroded samples were analyzed using synchrotron radiation micro-focused X-ray fluorescence, which indicated that the corrosion was mainly due to the dealloying of alloying element Cr in the matrix. Results from weight-loss measurement showed that the corrosion generally correlated with the irradiation dose of the alloy. (author)

  16. Heavy ion irradiation effects of brannerite-type ceramics

    International Nuclear Information System (INIS)

    Lian, J.; Wang, L.M.; Lumpkin, G.R.; Ewing, R.C.

    2002-01-01

    Brannerite, UTi 2 O 6 , occurs in polyphase Ti-based, crystalline ceramics that are under development for plutonium immobilization. In order to investigate radiation effects caused by α-decay events of Pu, a 1 MeV Kr + irradiation on UTi 2 O 6 , ThTi 2 O 6 , CeTi 2 O 6 and a more complex material, composed of Ca-containing brannerite and pyrochlore, was performed over a temperature range of 25-1020 K. The ion irradiation-induced crystalline-to-amorphous transformation was observed in all brannerite samples. The critical amorphization temperatures of the different brannerite compositions are: 970 K, UTi 2 O 6 ; 990 K, ThTi 2 O 6 ; 1020 K, CeTi 2 O 6 . The systematic increase in radiation resistance from Ce-, Th- to U-brannerite is related to the difference of mean atomic mass of A-site cation in the structure. As compared with the pyrochlore structure-type, brannerite phases are more susceptible to ion irradiation-induced amorphization. The effects of structure and chemical compositions on radiation resistance of brannerite-type and pyrochlore-type ceramics are discussed

  17. Characteristic effects of heavy ion irradiation on the rat brain

    International Nuclear Information System (INIS)

    Sun, X.Z.; Takahashi, S.; Kubota, Y.; Yoshida, S.; Takeda, H.; Zhang, R.; Fukui, Y.

    2005-01-01

    Heavy ion irradiation has the feature to administer a large radiation dose in the vicinity of the endpoint in the beam range, and its irradiation system and biophysical characteristics are different from ordinary irradiation instruments like X- or gamma-rays. Using this special feature, heavy ion irradiation has been applied for cancer treatment. The safety and efficacy of heavy ion irradiator have been demonstrated to a great extent. For instance, brain tumors treated by heavy-ion beams became smaller or disappearance. However, fundamental research related to such clinical phenotypes and their underlying mechanisms are little known. In order to clarify characteristic effects of heavy ion irradiation on the brain, we developed an experimental system for irradiating a restricted region of the rat brain using heavy ion beams. The characteristics of the heavy ion beams, histological, behavioral and elemental changes were studied in the rat following heavy ion irradiation. Adult male Sprague-Dawley rats, aged 12 weeks and weighing 260-340 g (Shizuoka Laboratory Animal Center, Hamamatsu, Japan) were used. Rats were deeply anesthetized 10-15 minutes before irradiation with ketamine (40 mg/kg) and xylazine (10 mg/kg), immobilized in a specifically designed jig, and irradiated with 290 MeV/nucleon charged carbon beams in a dorsal-to ventral direction, The left cerebral hemispheres of the brain were irradiated at doses of 100 Gy charged carbon particles. The depth-dose distribution of the heavy ion beams was modified to make a spread-out bragg peak of 5 mm wide with a range modulator. The characteristics of the heavy-ion beams (field and depth of the heavy-ion beams) were examined by a measuring paraffin section of rat brain at different thickness. That extensive necrosis was observed between 2.5 mm and 7.5 mm depth from the surface of the rat head, suggesting a relatively high dose and uniform dose was delivered among designed depths and the spread-out bragg peak used here

  18. Characterization of ion-irradiated ODS Fe–Cr alloys by doppler broadening spectroscopy using a positron beam

    Energy Technology Data Exchange (ETDEWEB)

    Parente, P.; Leguey, T. [Departamento de Física and IAAB, Universidad Carlos III de Madrid, 28911 Leganés (Spain); Castro, V. de, E-mail: vanessa.decastro@uc3m.es [Departamento de Física and IAAB, Universidad Carlos III de Madrid, 28911 Leganés (Spain); Gigl, T.; Reiner, M.; Hugenschmidt, C. [FRM II and Physics Department, Technische Universität München, 85747 Garching (Germany); Pareja, R. [Departamento de Física and IAAB, Universidad Carlos III de Madrid, 28911 Leganés (Spain)

    2015-09-15

    The damage profile of oxide dispersion strengthened steels after single-, or simultaneous triple-ion irradiation at different conditions has been characterized using a low energy positron beam in order to provide information on microstructural changes induced by irradiation. Doppler broadening and coincident Doppler broadening measurements of the positron annihilation line have been performed on different Fe–Cr–(W,Ti) alloys reinforced with Y{sub 2}O{sub 3}, to identify the nature and stability of irradiation-induced open-volume defects and their possible association with the oxide nanoparticles. It was found that irradiation induced vacancy clusters are associated with Cr atoms. The results are of highest interest for modeling the damage induced by 14 MeV neutrons in reduced activation Fe–Cr alloys relevant for fusion devices.

  19. Characterization of ion-irradiated ODS Fe–Cr alloys by doppler broadening spectroscopy using a positron beam

    International Nuclear Information System (INIS)

    Parente, P.; Leguey, T.; Castro, V. de; Gigl, T.; Reiner, M.; Hugenschmidt, C.; Pareja, R.

    2015-01-01

    The damage profile of oxide dispersion strengthened steels after single-, or simultaneous triple-ion irradiation at different conditions has been characterized using a low energy positron beam in order to provide information on microstructural changes induced by irradiation. Doppler broadening and coincident Doppler broadening measurements of the positron annihilation line have been performed on different Fe–Cr–(W,Ti) alloys reinforced with Y 2 O 3 , to identify the nature and stability of irradiation-induced open-volume defects and their possible association with the oxide nanoparticles. It was found that irradiation induced vacancy clusters are associated with Cr atoms. The results are of highest interest for modeling the damage induced by 14 MeV neutrons in reduced activation Fe–Cr alloys relevant for fusion devices

  20. TEM study of damage recovery in SiC by swift Xe ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Skuratov, V.A., E-mail: skuratov@jinr.ru [Joint Institute for Nuclear Research, Dubna (Russian Federation); O’Connell, J. [Centre for HRTEM, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Sohatsky, A.S. [Joint Institute for Nuclear Research, Dubna (Russian Federation); Neethling, J. [Centre for HRTEM, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa)

    2014-05-01

    The microstructure of 4H–SiC samples subsequently irradiated with low energy He (10 keV), Ti (220 keV) and high energy (167 MeV) Xe ions has been studied using cross-sectional transmission electron microscopy. It was found that xenon ions with fluences above 10{sup 13} cm{sup −2} restore crystallinity in a heavily damaged partially amorphous zone. No, or negligible damage recovery is observed in fully amorphized layers of silicon carbide.

  1. TEM study of damage recovery in SiC by swift Xe ion irradiation

    International Nuclear Information System (INIS)

    Skuratov, V.A.; O’Connell, J.; Sohatsky, A.S.; Neethling, J.

    2014-01-01

    The microstructure of 4H–SiC samples subsequently irradiated with low energy He (10 keV), Ti (220 keV) and high energy (167 MeV) Xe ions has been studied using cross-sectional transmission electron microscopy. It was found that xenon ions with fluences above 10 13 cm −2 restore crystallinity in a heavily damaged partially amorphous zone. No, or negligible damage recovery is observed in fully amorphized layers of silicon carbide

  2. Depth distribution of Frank loop defects formed in ion-irradiated stainless steel and its dependence on Si addition

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Dongyue, E-mail: dychen@safety.n.t.u-tokyo.ac.jp [The University of Tokyo, Department of Nuclear Engineering and Management, School of Engineering, 7-3-1 Hongo Bunkyo-ku, Tokyo 113-8656 (Japan); Murakami, Kenta [The University of Tokyo, Nuclear Professional School, School of Engineering, 2-22 Shirakata-Shirane, Tokai-mura, Ibaraki 319-1188 (Japan); Dohi, Kenji; Nishida, Kenji; Soneda, Naoki [Central Research Institute of Electric Power Industry, 2-11-1 Iwado-kita, Komae, Tokyo 201-8511 (Japan); Li, Zhengcao, E-mail: zcli@tsinghua.edu.cn [Tsinghua University, School of Materials Science and Engineering, Beijing 100084 (China); Liu, Li; Sekimura, Naoto [The University of Tokyo, Department of Nuclear Engineering and Management, School of Engineering, 7-3-1 Hongo Bunkyo-ku, Tokyo 113-8656 (Japan)

    2015-12-15

    Although heavy ion irradiation is a good tool to simulate neutron irradiation-induced damages in light water reactor, it produces inhomogeneous defect distribution. Such difference in defect distribution brings difficulty in comparing the microstructure evolution and mechanical degradation between neutron and heavy ion irradiation, and thus needs to be understood. Stainless steel is the typical structural material used in reactor core, and could be taken as an example to study the inhomogeneous defect depth distribution in heavy ion irradiation and its influence on the tested irradiation hardening by nano-indentation. In this work, solution annealed stainless steel model alloys are irradiated by 3 MeV Fe{sup 2+} ions at 400 °C to 3 dpa to produce Frank loops that are mainly interstitial in nature. The silicon content of the model alloys is also tuned to change point defect diffusion, so that the loop depth distribution influenced by diffusion along the irradiation beam direction could be discussed. Results show that in low Si (0% Si) and base Si (0.42% Si) samples the depth distribution of Frank loop density quite well matches the dpa profile calculated by the SRIM code, but in high Si sample (0.95% Si), the loop number density in the near-surface region is very low. One possible explanation could be Si’s role in enhancing the effective vacancy diffusivity, promoting recombination and thus suppressing interstitial Frank loops, especially in the near-surface region, where vacancies concentrate. By considering the loop depth distribution, the tested irradiation hardening is successfully explained by the Orowan model. A hardening coefficient of around 0.30 is obtained for all the three samples. This attempt in interpreting hardening results may make it easier to compare the mechanical degradation between different irradiation experiments.

  3. Ion irradiation effects on tensile properties of carbon fibres

    International Nuclear Information System (INIS)

    Kurumada, A.; Ishihara, M.; Baba, S.; Aihara, J.

    2004-01-01

    Carbon/carbon composite materials have high thermal conductivity and excellent mechanical properties at high temperatures. They have been used as structural materials at high temperatures in fission and experimental fusion reactors. The changes in the microstructures and the mechanical properties due to irradiation damage must be measured for the safety design and the life assessment of the materials. The purpose of this study is to obtain a basic knowledge of the development of new carbon composite materials having high thermal conductivity and excellent resistance to irradiation damage. Five kinds of carbon fibres were selected, including a vapour growth carbon fibre (VGCF; K1100X), a polyacrylonitrile-based fibre (PAN; M55JB by Toray Corp.), two meso-phase pitch-based fibres (YS-15-60S and YS-70-60S by Nippon Graphite Fiber Corp.) and a pitch-based fibre (K13C2U by Mitsubishi Chemical Co.). They were irradiated by high-energy carbon, nickel and argon ions. Irradiation damages in the carbon fibres are expected to be uniform across the cross-section, as the diameters of the carbon fibres are about 20 μm and are sufficiently smaller than the ranges of ions. The cross-sectional areas increased due to ion irradiation, with the exception of the K1100X of VGCF. One of the reasons for the increases is the swelling of carbon basal planes due to lattice defects in the graphite interlayer. The tensile strengths and the Young's moduli decreased due to ion irradiation except for the K1100X of VGCF and the YS-15-60S of meso-phase pitch-based fibres. One of the reasons for the decreases is thought to be that the microstructures of carbon fibres are damaged in the axial direction, as ions were irradiated vertically with respect to the longitudinal direction of carbon fibres. The results of this study indicate that the VGCF and the meso-phase pitch-based carbon fibres could be useful as reinforcement fibres of new carbon composite materials having high thermal conductivity and

  4. Unusual surface and edge morphologies, sp2 to sp3 hybridized transformation and electronic damage after Ar+ ion irradiation of few-layer graphene surfaces.

    Science.gov (United States)

    Al-Harthi, Salim Hamood; Elzain, Mohammed; Al-Barwani, Muataz; Kora'a, Amal; Hysen, Thomas; Myint, Myo Tay Zar; Anantharaman, Maliemadom Ramaswamy

    2012-08-19

    Roughness and defects induced on few-layer graphene (FLG) irradiated by Ar+ ions at different energies were investigated using X-ray photoemission spectroscopy (XPS) and atomic force microscopy techniques. The results provide direct experimental evidence of ripple formation, sp2 to sp3 hybridized carbon transformation, electronic damage, Ar+ implantation, unusual defects and edge reconstructions in FLG, which depend on the irradiation energy. In addition, shadowing effects similar to those found in oblique-angle growth of thin films were seen. Reliable quantification of the transition from the sp2-bonding to sp3-hybridized state as a result of Ar+ ion irradiation is achieved from the deconvolution of the XPS C (1s) peak. Although the ion irradiation effect is demonstrated through the shape of the derivative of the Auger transition C KVV spectra, we show that the D parameter values obtained from these spectra which are normally used in the literature fail to account for the sp2 to sp3 hybridization transition. In contrast to what is known, it is revealed that using ion irradiation at large FLG sample tilt angles can lead to edge reconstructions. Furthermore, FLG irradiation by low energy of 0.25 keV can be a plausible way of peeling graphene layers without the need of Joule heating reported previously.

  5. Modification of WS2 nanosheets with controllable layers via oxygen ion irradiation

    Science.gov (United States)

    Song, Honglian; Yu, Xiaofei; Chen, Ming; Qiao, Mei; Wang, Tiejun; Zhang, Jing; Liu, Yong; Liu, Peng; Wang, Xuelin

    2018-05-01

    As one kind of two-dimensional materials, WS2 nanosheets have drawn much attention with different kinds of research methods. Yet ion irradiation method was barely used for WS2 nanosheets. In this paper, the structure, composition and optical band gap (Eg) of the multilayer WS2 films deposited by chemical vapor deposition (CVD) method on sapphire substrates before and after oxygen ion irradiation with different energy and fluences were studied. Precise tailored layer-structures and a controllable optical band gap of WS2 nanosheets were achieved after oxygen ion irradiation. The results shows higher energy oxygen irradiation changed the shape from triangular shaped grains to irregular rectangle shape but did not change 2H-WS2 phase structure. The intensity of E2g1 (Г) and A1g (Г) modes decreased and have small shifts after oxygen ion irradiation. The peak frequency difference between the E2g1 (Г) and A1g (Г) modes (Δω) decreased after oxygen ion irradiation, and this result indicates the number of layers decreased after oxygen ion irradiation. The Eg decreased with the increase of the energy and the fluence of oxygen ions. The number of layers, thickness and optical band gap changed after ion irradiation with different ion fluences and energies. The results proposed a new strategy for precise control of multilayer nanosheets and demonstrated the high applicability of ion irradiation in super-capacitors, field effect transistors and other applications.

  6. Effect of microstructure on light ion irradiation creep in nickel

    International Nuclear Information System (INIS)

    Henager, C.H. Jr.; Simonen, E.P.; Bradley, E.R.; Stang, R.G.

    1983-01-01

    The concept of inhomogeneous slip or localized deformation is introduced to account for a weak dependence of irradiation creep on initial microstructure. Specimens of pure nickel (Ni) with three different microstructures were irradiated at 473 K with 15-17 MeV deuterons in the Pacific Northwest Laboratory (PNL) light ion irradiation creep apparatus. A dispersed barrier model for Climb-Glide (CG) creep was unable to account for the observed creep rates and creep strains. The weak dependence on microstructure was consistent with the Stress Induced Preferential Absorption (SIPA) creep mechanism but a high stress enhanced bias had to be assumed to account for the creep rates. Also, SIPA was unable to account for the observed creep strains. The CG and SIPA modeling utilized rate theory calculations of point defect fluxes and transmission electron microscopy for sink sizes and densities. (orig.)

  7. Ion-irradiation studies of cascade damage in metals

    International Nuclear Information System (INIS)

    Averback, R.S.

    1982-03-01

    Ion-irradiation studies of the fundamental aspects of cascade damage in metals are reviewed. The emphasis of these studies has been the determination of the primary state of damage (i.e. the arrangement of atoms in the cascade region prior to thermal migration of defects). Progress has been made towards understanding the damage function (i.e. the number of Frenkel pairs produced as a function of primary recoil atom energy), the spatial configuration of vacancies and interstitials in the cascade and the cascade-induced mixing of atoms. It is concluded for these studies that the agitation of the lattice in the vicinity of energetic displacement cascades stimulates the defect motion and that such thermal spike motion induces recombination and clustering of Frenkel defects. 9 figures

  8. Stability of uranium silicides during high energy ion irradiation

    International Nuclear Information System (INIS)

    Birtcher, R.C; Wang, L.M.

    1991-11-01

    Changes induced by 1.5 MeV Kr ion irradiation of both U 3 Si and U 3 Si 2 have been followed by in situ transmission electron microscopy. When irradiated at sufficiently low temperatures, both alloys transform from the crystalline to the amorphous state. When irradiated at temperatures above the temperature limit for ion beam amorphization, both compounds disorder with the Martensite twin structure in U 3 Si disappearing from view in TEM. Prolonged irradiation of the disordered crystalline phases results in nucleation of small crystallites within the initially large crystal grains. The new crystallites increase in number during continued irradiation until a fine grain structure is formed. Electron diffraction yields a powder-like diffraction pattern that indicates a random alignment of the small crystallites. During a second irradiation at lower temperatures, the small crystallizes retard amorphization. After 2 dpa at high temperatures, the amorphization dose is increased by over twenty times compared to that of initially unirradiated material

  9. Surface modification of multilayer graphene using Ga ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Quan, E-mail: wangq@mail.ujs.edu.cn [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China); State Key Laboratory of Transducer Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Shao, Ying; Ge, Daohan; Ren, Naifei [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China); Yang, Qizhi [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China); State key laboratory of Robotics, Chinese Academy of Sciences, Shengyang 110000 (China)

    2015-04-28

    The effect of Ga ion irradiation intensity on the surface of multilayer graphene was examined. Using Raman spectroscopy, we determined that the irradiation caused defects in the crystal structure of graphene. The density of defects increased with the increase in dwell times. Furthermore, the strain induced by the irradiation changed the crystallite size and the distance between defects. These defects had the effect of doping the multilayer graphene and increasing its work function. The increase in work function was determined using contact potential difference measurements. The surface morphology of the multilayer graphene changed following irradiation as determined by atomic force microscopy. Additionally, the adhesion between the atomic force microscopy tip and sample increased further indicating that the irradiation had caused surface modification, important for devices that incorporate graphene.

  10. Modification of embedded Cu nanoparticles: Ion irradiation at room temperature

    International Nuclear Information System (INIS)

    Johannessen, B.; Kluth, P.; Giulian, R.; Araujo, L.L.; Llewellyn, D.J.; Foran, G.J.; Cookson, D.J.; Ridgway, M.C.

    2007-01-01

    Cu nanoparticles (NPs) with an average diameter of ∼25 A were synthesized in SiO 2 by ion implantation and thermal annealing. Subsequently, the NPs were exposed to ion irradiation at room temperature simultaneously with a bulk Cu reference film. The ion species/energy was varied to achieve different values for the nuclear energy loss. The short-range atomic structure and average NP diameter were measured by means of extended X-ray absorption fine structure spectroscopy and small angle X-ray scattering, respectively. Transmission electron microscopy yielded complementary results. The short-range order of the Cu films remained unchanged consistent with the high regeneration rate of bulk elemental metals. For the NP samples it was found that increasing nuclear energy loss yielded gradual dissolution of NPs. Furthermore, an increased structural disorder was observed for the residual NPs

  11. Neovascular glaucoma after helium ion irradiation for uveal melanoma

    International Nuclear Information System (INIS)

    Kim, M.K.; Char, D.H.; Castro, J.L.; Saunders, W.M.; Chen, G.T.; Stone, R.D.

    1986-01-01

    Neovascular glaucoma developed in 22 of 169 uveal melanoma patients treated with helium ion irradiation. Most patients had large melanomas; no eyes containing small melanomas developed anterior segment neovascularization. The mean onset of glaucoma was 14.1 months (range, 7-31 months). The incidence of anterior segment neovascularization increased with radiation dosage; there was an approximately three-fold increase at 80 GyE versus 60 GyE of helium ion radiation (23% vs. 8.5%) (P less than 0.05). Neovascular glaucoma occurred more commonly in larger tumors; the incidence was not affected by tumor location, presence of subretinal fluid, nor rate of tumor regression. Fifty-three percent of patients had some response with intraocular pressures of 21 mmHg or less to a combination of antiglaucoma treatments

  12. Effects of microstructure on light ion irradiation creep in nickel

    International Nuclear Information System (INIS)

    Henager, C.H. Jr.; Simonen, E.P.; Bradley, E.R.; Stang, R.G.

    1982-10-01

    The concept of inhomogeneous slip or localized deformation is introduced to account for a weak dependence of irradiation creep on initial microstructure. Specimens of pure Ni with three different microstructures were irradiated at 473 0 K with 15 to 17 MeV deuterons in the PNL light ion irradiation creep apparatus. A dispersed barrier model for climb-glide creep was unable to account for the observed creep rates and creep strains. The weak dependence on microstructure was consistent with the SIPA creep mechanism but a high stress enhanced bias had to be assumed to account for the creep rates. Also, SIPA was unable to account for the observed creep strains. The modeling utilized rate theory calculations of point defect fluxes and transmission electron microscopy for sink sizes and densities

  13. Hydrogen formation under gamma and heavy ions irradiation of geopolymers

    International Nuclear Information System (INIS)

    Chupin, F.; Dannoux-Papin, A.; D'Espinose de Lacaillerie, J.B.; Ngono Ravache, Y.

    2015-01-01

    This study examines the behavior under irradiation of geo-polymer which is not yet well known and attempts to highlight the importance of water radiolysis. For their use as embedding matrices, stability under ionizing radiation as well as low hydrogen gas released must be demonstrated. Different formulations of geo-polymers have been irradiated either with γ-rays ( 60 Co sources) or 75 MeV 36 Ar ions beams and the production of hydrogen released has been quantified. This paper presents the results of gas analysis in order to identify important structural parameters that influence confined water radiolysis. Indeed, a correlation between pore size, water content on one side, and the hydrogen production radiolytic yield (G(H 2 )) on the other side, has been demonstrated. For the 75 MeV 36 Ar ions irradiation, the effect of porosity has not been well emphasized. For both, the results have revealed the water content influence. (authors)

  14. Surface Passivation and Junction Formation Using Low Energy Hydrogen Implants

    Science.gov (United States)

    Fonash, S. J.

    1985-01-01

    New applications for high current, low energy hydrogen ion implants on single crystal and polycrystal silicon grain boundaries are discussed. The effects of low energy hydrogen ion beams on crystalline Si surfaces are considered. The effect of these beams on bulk defects in crystalline Si is addressed. Specific applications of H+ implants to crystalline Si processing are discussed. In all of the situations reported on, the hydrogen beams were produced using a high current Kaufman ion source.

  15. Ion irradiation as a tool for modifying the surface and optical properties of plasma polymerised thin films

    Energy Technology Data Exchange (ETDEWEB)

    Grant, Daniel S. [College of Science, Technology and Engineering, James Cook University, Townsville, Queensland 4811 (Australia); Bazaka, Kateryna [College of Science, Technology and Engineering, James Cook University, Townsville, Queensland 4811 (Australia); School of Chemistry, Physics, and Mechanical Engineering, Queensland University of Technology, Brisbane, Queensland 4000 (Australia); Siegele, Rainer [Institute for Environmental Research, Australian Nuclear Science and Technology Organisation, Lucas Heights, New South Wales 2234 (Australia); Holt, Stephen A. [Bragg Institute, Australian Nuclear Science and Technology Organisation, Lucas Heights, New South Wales 2234 (Australia); Jacob, Mohan V., E-mail: Mohan.Jacob@jcu.edu.au [College of Science, Technology and Engineering, James Cook University, Townsville, Queensland 4811 (Australia)

    2015-10-01

    Radio frequency (R.F.) glow discharge polyterpenol thin films were prepared on silicon wafers and irradiated with I{sup 10+} ions to fluences of 1 × 10{sup 10} and 1 × 10{sup 12} ions/cm{sup 2}. Post-irradiation characterisation of these films indicated the development of well-defined nano-scale ion entry tracks, highlighting prospective applications for ion irradiated polyterpenol thin films in a variety of membrane and nanotube-fabrication functions. Optical characterisation showed the films to be optically transparent within the visible spectrum and revealed an ability to selectively control the thin film refractive index as a function of fluence. This indicates that ion irradiation processing may be employed to produce plasma-polymer waveguides to accommodate a variety of wavelengths. XRR probing of the substrate-thin film interface revealed interfacial roughness values comparable to those obtained for the uncoated substrate’s surface (i.e., both on the order of 5 Å), indicating minimal substrate etching during the plasma deposition process.

  16. Application of heavy-ion microbeam system at Kyoto University: Energy response for imaging plate by single ion irradiation

    International Nuclear Information System (INIS)

    Tosaki, M.; Nakamura, M.; Hirose, M.; Matsumoto, H.

    2011-01-01

    A heavy-ion microbeam system for cell irradiation has been developed using an accelerator at Kyoto University. We have successfully developed proton-, carbon-, fluorine- and silicon-beams in order to irradiate a micro-meter sized area with ion counting, especially single ion irradiation. In the heavy-ion microbeam system, an imaging plate (IP) was utilized for beam diagnostics on the irradiation. The IP is widely used for radiography studies in biology. However, there are a few studies on the low linear energy transfer (LET) by single ions, i.e., low-intensity exposure. Thus we have investigated the energy response for the IP, which can be utilized for microbeam diagnostics.

  17. A study of low-energy ion induced radiolysis of thiol-containing amino acid cysteine in the solid and aqueous solution states

    Energy Technology Data Exchange (ETDEWEB)

    Ke Zhigang [Key Laboratory of Ion Beam Bio-engineering, Institute of Plasma Physics of Chinese Academy of Sciences, 350 Shushanhu Road, P.O. Box 1126, Hefei 230031 (China); Huang Qing, E-mail: huangq@ipp.ac.c [Key Laboratory of Ion Beam Bio-engineering, Institute of Plasma Physics of Chinese Academy of Sciences, 350 Shushanhu Road, P.O. Box 1126, Hefei 230031 (China); Dang Bingrong [Institute of Modern Physics, Chinese Academy of Sciences, 509 Nanchang Road, Lanzhou 730000 (China); Lu Yilin [Key Laboratory of Ion Beam Bio-engineering, Institute of Plasma Physics of Chinese Academy of Sciences, 350 Shushanhu Road, P.O. Box 1126, Hefei 230031 (China); Department of Physics, Anhui University, Hefei 230031 (China); Yuan Hang; Zhang Shuqing; Yu Zengliang [Key Laboratory of Ion Beam Bio-engineering, Institute of Plasma Physics of Chinese Academy of Sciences, 350 Shushanhu Road, P.O. Box 1126, Hefei 230031 (China)

    2010-09-15

    The radiolysis of cysteine under plasma discharge and irradiation of low-energy ion beam was investigated. The damage of cysteine in aqueous solution under discharge was assessed via the acid ninhydrin reagent and the yield of cystine produced from the reaction was analyzed by FTIR. In addition, the generation of hydrogen sulfide was also identified. The destruction of solid cysteine under low-energy ion beam irradiation was estimated via monitoring IR bands of different functional groups (-SH, -NH{sub 3}, -COO{sup -}) of cysteine, and the production of cystine from ion-irradiated solid cysteine after dissolution in water was also verified. These results may help us to understand the inactivation of sulphydryl enzymes under direct and indirect interaction with the low-energy ion irradiation.

  18. Single-ion irradiation: physics, technology and applications

    International Nuclear Information System (INIS)

    Ohdomari, Iwao

    2008-01-01

    Among the various radiation effects which involve the study of radiation environments, responses of materials and devices to radiation, radiation testing and radiation hardening of devices and equipment, this review mainly considers the radiation effects induced by alpha particles and other ions used in semiconductor technology on Si crystals and Si devices. We first describe the single-ion microprobe that enables the study of the site dependence of radiation hardness in a semiconductor device. Next, we describe single-ion implantation as a tool for suppressing fluctuation in device function induced by the discrete number and random position of dopant atoms. Finally, we describe the common features associated with both 'probing' and 'modification' in terms of the nature and behaviour of defect clusters induced by single-ion irradiation. A special feature of the review is that the radiation effects discussed here are induced by 'single' particles, and not by particle beams. Although there is a great amount of accumulated data on radiation effects, they are discussed in the conventional terms of 'dose' or 'fluence,' whose unit is cm -2 . Therefore, this review provides complementary information on radiation effects. (topical review)

  19. Kr ion irradiation study of the depleted-uranium alloys

    Science.gov (United States)

    Gan, J.; Keiser, D. D.; Miller, B. D.; Kirk, M. A.; Rest, J.; Allen, T. R.; Wachs, D. M.

    2010-12-01

    Fuel development for the reduced enrichment research and test reactor (RERTR) program is tasked with the development of new low enrichment uranium nuclear fuels that can be employed to replace existing high enrichment uranium fuels currently used in some research reactors throughout the world. For dispersion type fuels, radiation stability of the fuel-cladding interaction product has a strong impact on fuel performance. Three depleted-uranium alloys are cast for the radiation stability studies of the fuel-cladding interaction product using Kr ion irradiation to investigate radiation damage from fission products. SEM analysis indicates the presence of the phases of interest: U(Al, Si) 3, (U, Mo)(Al, Si) 3, UMo 2Al 20, U 6Mo 4Al 43 and UAl 4. Irradiations of TEM disc samples were conducted with 500 keV Kr ions at 200 °C to ion doses up to 2.5 × 10 19 ions/m 2 (˜10 dpa) with an Kr ion flux of 10 16 ions/m 2/s (˜4.0 × 10 -3 dpa/s). Microstructural evolution of the phases relevant to fuel-cladding interaction products was investigated using transmission electron microscopy.

  20. Kr ion irradiation study of the depleted-uranium alloys

    Energy Technology Data Exchange (ETDEWEB)

    Gan, J., E-mail: Jian.Gan@inl.go [Idaho National Laboratory, P.O. Box 1625, Idaho Falls, ID 83415-6188 (United States); Keiser, D.D. [Idaho National Laboratory, P.O. Box 1625, Idaho Falls, ID 83415-6188 (United States); Miller, B.D. [University of Wisconsin, 1500 Engineering Drive, Madison, WI 53706 (United States); Kirk, M.A.; Rest, J. [Argonne National Laboratory, 9700 South Cass Ave., Argonne, IL 60439 (United States); Allen, T.R. [University of Wisconsin, 1500 Engineering Drive, Madison, WI 53706 (United States); Wachs, D.M. [Idaho National Laboratory, P.O. Box 1625, Idaho Falls, ID 83415-6188 (United States)

    2010-12-01

    Fuel development for the reduced enrichment research and test reactor (RERTR) program is tasked with the development of new low enrichment uranium nuclear fuels that can be employed to replace existing high enrichment uranium fuels currently used in some research reactors throughout the world. For dispersion type fuels, radiation stability of the fuel-cladding interaction product has a strong impact on fuel performance. Three depleted-uranium alloys are cast for the radiation stability studies of the fuel-cladding interaction product using Kr ion irradiation to investigate radiation damage from fission products. SEM analysis indicates the presence of the phases of interest: U(Al, Si){sub 3}, (U, Mo)(Al, Si){sub 3}, UMo{sub 2}Al{sub 20}, U{sub 6}Mo{sub 4}Al{sub 43} and UAl{sub 4}. Irradiations of TEM disc samples were conducted with 500 keV Kr ions at 200 {sup o}C to ion doses up to 2.5 x 10{sup 19} ions/m{sup 2} ({approx}10 dpa) with an Kr ion flux of 10{sup 16} ions/m{sup 2}/s ({approx}4.0 x 10{sup -3} dpa/s). Microstructural evolution of the phases relevant to fuel-cladding interaction products was investigated using transmission electron microscopy.

  1. Construction plan of ion irradiation facility in JAERI

    International Nuclear Information System (INIS)

    Tanaka, Ryuichi

    1987-01-01

    The Takasaki Radiation Chemistry Research Establishment of Japan Atomic Energy Research Institute (JAERI) started the construction of an ion irradiation facility to apply ion beam to the research and development of radiation resistant materials for severe environment, the research on biotechnology and new functional materials. This project was planned as ion beam irradiation becomes an effective means for the research on fundamental physics and advanced technology, and the national guideline recently emphasizes the basic and pioneering field in research and development. This facility comprises an AVF cyclotron with an ECR ion source (maximum proton energy: 90 MeV), a 3 MV tandem accelerator, a 3 MV single end type Van de Graaf accelerator and a 400 kV ion implanter. In this report, the present status of planning the accelerators and the facility to be constructed, the outline of research plan, the features of the accelerators, and the beam characteristics are described. In this project, the research items are divided into the materials for space environment, the materials for nuclear fusion reactors, biotechnology, new functional materials, and ion beam technology. The ion beams required for the facility are microbeam, pulsed beam, multiple beam, neutron beam and an expanded irradiation field. (Kako, I.)

  2. Anti-biofilm activity of Fe heavy ion irradiated polycarbonate

    Energy Technology Data Exchange (ETDEWEB)

    Joshi, R.P. [Department of Physics, Savitribai Phule Pune University, Pune 411007 (India); Hareesh, K., E-mail: appi.2907@gmail.com [Department of Physics, Savitribai Phule Pune University, Pune 411007 (India); Bankar, A. [Department of Microbiology, Waghire College, Pune 412301 (India); Sanjeev, Ganesh [Microtron Centre, Department of Studies in Physics, Mangalore University, Mangalore 574166 (India); Asokan, K.; Kanjilal, D. [Inter University Accelerator Centre, Arun Asaf Ali Marg, New Delhi 110067 (India); Dahiwale, S.S.; Bhoraskar, V.N. [Department of Physics, Savitribai Phule Pune University, Pune 411007 (India); Dhole, S.D., E-mail: sanjay@physics.unipune.ac.in [Department of Physics, Savitribai Phule Pune University, Pune 411007 (India)

    2016-10-01

    Highlights: • PC films were irradiated by 60 and 120 MeV Fe ions. • Irradiated PC films showed changes in its physical and chemical properties. • Irradiated PC also showed more anti-biofilm activity compared to pristine PC. - Abstract: Polycarbonate (PC) polymers were investigated before and after high energy heavy ion irradiation for anti-bacterial properties. These PC films were irradiated by Fe heavy ions with two energies, viz, 60 and 120 MeV, at different fluences in the range from 1 × 10{sup 11} ions/cm{sup 2} to 1 × 10{sup 13} ions/cm{sup 2}. UV-Visible spectroscopic results showed optical band gap decreased with increase in ion fluences due to chain scission mainly at carbonyl group of PC which is also corroborated by Fourier transform infrared spectroscopic results. X-ray diffractogram results showed decrease in crystallinity of PC after irradiation which leads to decrease in molecular weight. This is confirmed by rheological studies and also by differential scanning calorimetric results. The irradiated PC samples showed modification in their surfaces prevents biofilm formation of human pathogen, Salmonella typhi.

  3. Structural characterization of swift heavy ion irradiated polycarbonate

    International Nuclear Information System (INIS)

    Singh, Lakhwant; Samra, Kawaljeet Singh

    2007-01-01

    Makrofol-N polycarbonate thin films were irradiated with copper (50 MeV) and nickel (86 MeV) ions. The modified films were analyzed by UV-VIS, FTIR and XRD techniques. The experimental data was used to evaluate the formation of chromophore groups (conjugated system of bonds), degradation cross-section of the special functional groups, the alkyne formation and the amorphization cross-section. The investigation of UV-VIS spectra shows that the formation of chromophore groups is reduced at larger wavelength, however its value increases with the increase of ion fluence. Degradation cross-section for the different chemical groups present in the polycarbonate chains was evaluated from the FTIR data. It was found that there was an increase of degradation cross-section of chemical groups with the increase of electronic energy loss in polycarbonate. The alkyne and alkene groups were found to be induced due to swift heavy ion irradiation in polycarbonate. The radii of the alkyne production of about 2.74 and 2.90 nm were deduced for nickel (86 MeV) and copper (50 MeV) ions respectively. XRD analysis shows the decrease of the main XRD peak intensity. Progressive amorphization process of Makrofol-N with increasing fluence was traced by XRD measurements

  4. Amorphization, morphological instability and crystallization of krypton ion irradiated germanium

    International Nuclear Information System (INIS)

    Wang, L.M.; Birtcher, R.C.

    1991-01-01

    Krypton ion irradiation of crystalline Ge and subsequent thermal annealing were both carried out with in situ transmission electron microscopy observations. The temperature dependence of the amorphization dose, effect of foil thickness, morphological changes during continuous irradiation of the amorphous state as well as the effect of implanted gas have been determined. The dose of 1.5 MeV Kr required for amorphization increases with increasing temperature. At a fixed temperature, the amorphization dose is higher for thicker regions of the specimen. Continuous irradiation of amorphous Ge at room temperature results in a high density of small cavities which grow with increasing dose. Cavities do not coalesce during growth but develop into irregular-shaped holes that eventually transform the amorphous Ge into a sponge-like material. Formation of the spongy structure is independent of Kr implantation. The crystallization temperature and the morphology of recrystallized Ge depend on the Kr + dose. Voids are expelled from recrystallized Ge, while the sponge-like structure is retained after crystallization. (author)

  5. Precipitation in Ni-Si during electron and ion irradiation

    Science.gov (United States)

    Lucas, G. E.; Zama, T.; Ishino, S.

    1986-11-01

    This study was undertaken to further investigate how the nature of the irradiation condition affects precipitation in a dilute Ni-Si system. Transmission electron microscopy (TEM) discs of a solution annealed Ni alloy containing 5 at% Si were irradiated with 400 keV Ar + ions, 200 keV He + ions and 1 MeV electrons at average displacement rates in the range 2 × 10 -5dpa/s to 2 × 10 -3dpa/s at temperatures in the range 25°C to 450°C. Samples irradiated with electrons were observed in situ in an HVEM, while ion irradiated specimens were examined in a TEM after irradiation. Precipitation of Ni 3Si was detected by the appearance of superlattice spots in the electron diffraction patterns. It was found that as the mass of the irradiating species increased, the lower bound temperature at which Ni 3Si precipitation was first observed increased. For electron irradiation, the lower bound temperature at 2 × 10 -3dpa/s was ˜125°C, whereas for 400 keV Ar + irradiation at a similar average displacement rate the lower boundary was approximately 325°C. This suggests that cascade disordering competes with radiation induced solute segregation.

  6. Precipitation in Ni-Si during electron and ion irradiation

    International Nuclear Information System (INIS)

    Lucas, G.E.; Zama, T.; Ishino, S.

    1986-01-01

    This study was undertaken to further investigate how the nature of the irradiation condition affects precipitation in a dilute Ni-Si system. Transmission electron microscopy (TEM) discs of a solution annealed Ni alloy containing 5 at% Si were irradiated with 400 keV Ar + ions, 200 keV He + ions and 1 MeV electrons at average displacement rates in the range 2x10 -5 dpa/s to 2x10 -3 dpa/s at temperatures in the range 25 0 C to 450 0 C. Samples irradiated with electrons were observed in situ in an HVEM, while ion irradiated specimens were examined in a TEM after irradiation. Precipitation of Ni 3 Si was detected by the appearance of superlattice spots in the electron diffraction patterns. It was found that as the mass of the irradiating species increased, the lower bound temperature at which Ni 3 Si precipitation was first observed increased. For electron irradiation, the lower bound temperature at 2x10 -3 dpa/s was ∝125 0 C, whereas for 400 keV Ar + irradiation at a similar average displacement rate the lower boundary was approximately 325 0 C. This suggests that cascade disordering competes with radiation induced solute segregation. (orig.)

  7. Positron Annihilation Study of Ion-irradiated Si

    International Nuclear Information System (INIS)

    Shin, Jung Ki; Kwon, Jun Hyun; Lee, Jong Yong

    2009-01-01

    Structural parts like a spaceship, satellite and solar cell are composed of metal alloy or semiconductor materials. Especially, Si is used as a primary candidate alloy. But, manned and robotic missions to the Earth's moon and Mars are exposed to a continuous flux of Galactic Cosmic Rays (GCR) and occasional, but intense, fluxes of Solar Energetic Particles. These natural radiations impose hazards to manned exploration. Irradiation of cosmic particle induces various changes in the mechanical and physical properties of device steels. It is, therefore, important to investigate radiation damage to the component materials in semiconductor. The evolution of radiation-induced defects leads to degradation of the mechanical properties. One of them includes irradiation embrittlement, which can cause a loss of ductility and further increase the probability of a brittle fracture. It can be more dangerous in the space. Positron annihilation lifetime spectroscopy(PALS) have been applied to investigate the production of vacancy-type defects for Ion-irradiated Si wafer penetrated by H, He, O and Fe ions. Then, we carried out a comparison with an un-irradiated Si wafer

  8. Elastic wave from fast heavy ion irradiation on solids

    CERN Document Server

    Kambara, T; Kanai, Y; Kojima, T M; Nanai, Y; Yoneda, A; Yamazaki, Y

    2002-01-01

    To study the time-dependent mechanical effects of fast heavy ion irradiations, we have irradiated various solids by a short-bunch beam of 95 MeV/u Ar ions and observed elastic waves generated in the bulk. The irradiated targets were square-shaped plates of poly-crystals of metals (Al and Cu), invar alloy, ceramic (Al sub 2 O sub 3), fused silica (SiO sub 2) and single crystals of KC1 and LiF with a thickness of 10 mm. The beam was incident perpendicular to the surface and all ions were stopped in the target. Two piezo-electric ultrasonic sensors were attached to the surface of the target and detected the elastic waves. The elastic waveforms as well as the time structure and intensity of the beam bunch were recorded for each shot of a beam bunch. The sensor placed opposite to the beam spot recorded a clear waveform of the longitudinal wave across the material, except for the invar and fused silica targets. From its propagation time along with the sound velocity and the thickness of the target, the depth of the...

  9. Chlorine diffusion in uranium dioxide under heavy ion irradiation

    International Nuclear Information System (INIS)

    Pipon, Y.; Bererd, N.; Moncoffre, N.; Peaucelle, C.; Toulhoat, N.; Jaffrezic, H.; Raimbault, L.; Sainsot, P.; Carlot, G.

    2007-01-01

    The radiation enhanced diffusion of chlorine in UO 2 during heavy ion irradiation is studied. In order to simulate the behaviour of 36 Cl, present as an impurity in UO 2 , 37 Cl has been implanted into the samples (projected range 200 nm). The samples were then irradiated with 63.5 MeV 127 I at two fluxes and two temperatures and the chlorine distribution was analyzed by SIMS. The results show that, during irradiation, the diffusion of the implanted chlorine is enhanced and slightly athermal with respect to pure thermal diffusion. A chlorine gain of 10% accumulating near the surface has been observed at 510 K. This corresponds to the displacement of pristine chlorine from a region of maximum defect concentration. This behaviour and the mean value of the apparent diffusion coefficient found for the implanted chlorine, around 2.5 x 10 -14 cm 2 s -1 , reflect the high mobility of chlorine in UO 2 during irradiation with fission products

  10. Chlorine diffusion in uranium dioxide under heavy ion irradiation

    Science.gov (United States)

    Pipon, Y.; Bérerd, N.; Moncoffre, N.; Peaucelle, C.; Toulhoat, N.; Jaffrézic, H.; Raimbault, L.; Sainsot, P.; Carlot, G.

    2007-04-01

    The radiation enhanced diffusion of chlorine in UO2 during heavy ion irradiation is studied. In order to simulate the behaviour of 36Cl, present as an impurity in UO2, 37Cl has been implanted into the samples (projected range 200 nm). The samples were then irradiated with 63.5 MeV 127I at two fluxes and two temperatures and the chlorine distribution was analyzed by SIMS. The results show that, during irradiation, the diffusion of the implanted chlorine is enhanced and slightly athermal with respect to pure thermal diffusion. A chlorine gain of 10% accumulating near the surface has been observed at 510 K. This corresponds to the displacement of pristine chlorine from a region of maximum defect concentration. This behaviour and the mean value of the apparent diffusion coefficient found for the implanted chlorine, around 2.5 × 10-14 cm2 s-1, reflect the high mobility of chlorine in UO2 during irradiation with fission products.

  11. Performance of a dual-process PVD/PS tungsten coating structure under deuterium ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Hyunmyung; Lee, Ho Jung; Kim, Sung Hwan [Department of Nuclear and Quantum Engineering, KAIST, Daejeon (Korea, Republic of); Song, Jae-Min [Department of Nuclear Engineering, Seoul National University, Seoul (Korea, Republic of); Jang, Changheui, E-mail: chjang@kaist.ac.kr [Department of Nuclear and Quantum Engineering, KAIST, Daejeon (Korea, Republic of)

    2016-11-01

    Highlights: • D{sup +} irradiation performance of a dual-process PVD/PS W coating was evaluated. • Low-energy plasmas exposure of 100 eV D{sup +} with 1.17 × 10{sup 21} D/s{sup −1} m{sup 2} flux was applied. • After D ion irradiation, flakes were observed on the surface of the simple PS coating. • While, sub-μm size protrusions were observed for dual-process PVD/PS W coating. • Height of D spike in depth profile was lower for dual-process PVD/PS W coating. - Abstract: A dual-process coating structure was developed on a graphite substrate to improve the performance of the coating structure under anticipated operating condition of fusion devices. A thin multilayer W/Mo coating (6 μm) was deposited by physical vapor deposition (PVD) method with a variation of Mo interlayer thickness on plasma spray (PS) W coating (160 μm) of a graphite substrate panel. The dual-process PVD/PS W coatings then were exposed to 3.08 × 10{sup 24} D m{sup −2} of 100 eV D ions with a flux of 1.71 × 10{sup 21} D m{sup −2} s{sup −1} in an electron cyclotron resonance (ECR) chamber. After irradiation, surface morphology and D depth profiles of the dual-process coating were analyzed and compared to those of the simple PS W coating. Both changes in surface morphology and D retention were strongly dependent on the microstructure of surface coating. Meanwhile, the existence of Mo interlayer seemed to have no significant effect on the retention of deuterium.

  12. Low energy ion scattering as a tool for surface structure and composition analysis

    International Nuclear Information System (INIS)

    Armour, D.G.

    1980-01-01

    Low energy ion scattering is finding increasing application in the study of areas such as gas adsorption, thin film deposition and surface damage creation and annealing during ion irradiation where structural and compositional changes occurring in only the outermost atomic layer need to be monitored. The capabilities of the technique and the ways in which it has been developed for different types of analysis depend strongly on the fundamental atomic collision processes taking place at the surface and it is these processes, together with examples of their role in analysis applications, that form the subject of this paper. (author)

  13. Comparison of swelling for structural materials on neutron and ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Loomis, B.A.

    1986-03-01

    The swelling of V-base alloys, Type 316 stainless steel, Fe-25Ni-15Cr alloys, ferritic steels, Cu, Ni, Nb-1% Zr, and Mo on neutron irradiation is compared with the swelling for these materials on ion irradiation. The results of this comparison show that utilization of the ion-irradiation technique provides for a discriminative assessment of the potential for swelling of candidate materials for fusion reactors.

  14. Effect of ion irradiation on the structure and the surface topography of carbon fiber

    International Nuclear Information System (INIS)

    Ligacheva, E.A.; Galyaeva, L.V.; Gavrilov, N.V.; Belykh, T.A.; Ligachev, A.E.; Sokhoreva, V.V.

    2006-01-01

    The effect of C + ion irradiation (40 keV, 10 15 - 10 19 cm -2 ) on the structure and surface topography of high-module carbon fibers is investigated. Interplanar distance and internal stress values are found to be minimal at a radiation dose of 10 17 cm -2 , the height of a layer pack being practically unchanged. The relief of ion irradiated carbon fiber surface constitutes regularly repetitive valleys and ridges spaced parallel with the fiber axis [ru

  15. Electronic excitation induced modifications in elongated iron nanoparticle encapsulated multiwalled carbon nanotubes under ion irradiation

    Science.gov (United States)

    Saikiran, V.; Bazylewski, P.; Sameera, I.; Bhatia, Ravi; Pathak, A. P.; Prasad, V.; Chang, G. S.

    2018-05-01

    Multi-wall carbon nanotubes (MWCNT) filled with Fe nanorods were shown to have contracted and deformed under heavy ion irradiation. In this study, 120 MeV Ag and 80 MeV Ni ion irradiation was performed to study the deformation and defects induced in iron filled MWCNT under heavy ion irradiation. The structural modifications induced due to electronic excitation by ion irradiation were investigated employing high-resolution transmission electron microscopy, micro-Raman scattering experiments, and synchrotron-based X-ray absorption and emission spectroscopy. We understand that the ion irradiation causes modifications in the Fe nanorods which result in compressions and expansions of the nanotubes, and in turn leads to the buckling of MWCNT. The G band of the Raman spectra shifts slightly towards higher wavenumber and the shoulder G‧ band enhances with the increase of ion irradiation fluence, where the buckling wavelength depends on the radius 'r' of the nanotubes as exp[(r)0.5]. The intensity ratio of the D to G Raman modes initially decreases at the lowest fluence, and then it increases with the increase in ion fluence. The electron diffraction pattern and the high resolution images clearly show the presence of ion induced defects on the walls of the tube and encapsulated iron nanorods.

  16. Early Stage of Deformation under Nanoindenter Tip of Ion-irradiated Single Crystals

    International Nuclear Information System (INIS)

    Shin, Chan Sun; Jin, Hyung Ha; Kwon, Jun Hyun

    2010-01-01

    Ion irradiation has been used for almost 40 years to emulate the effect of neutrons. Ion irradiation has a number of advantages in terms of time and expenses compared to neutron irradiation. Ion irradiation is expected to greatly contribute to the development of Fusion and Gen IV materials. Ions have short penetration depth, and they induce continuously varying dose rate over the penetration depth. Although it depends on the energy and species of incident ions, the depth of ion-irradiated region is in general on the order of a few micron meters. Depth controlled probing technique is required to measure the mechanical properties of ion-irradiated layer, and nanoindentation is widely used. During nanoindentation, a hard tip with known properties is pressed into a material which has unknown properties. The depth of penetration and load on the indenter are recorded during loading and unloading. The initial Loading depth curve follows the Hertzian elastic solution, and at a certain load, a sudden displacement excursion occurs in indenter depth and then hardening follows. This is called 'Pop-in' event, and since residual impression can be found only after pop-ins, the pop-in is regarded as the onset of plasticity. The objectives of this research are to investigate the effects of ion irradiation on popins, and to examine dislocation nucleation and propagation at the onset of plasticity by using MD simulations

  17. Early Stage of Deformation under Nanoindenter Tip of Ion-irradiated Single Crystals

    Energy Technology Data Exchange (ETDEWEB)

    Shin, Chan Sun; Jin, Hyung Ha; Kwon, Jun Hyun [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2010-10-15

    Ion irradiation has been used for almost 40 years to emulate the effect of neutrons. Ion irradiation has a number of advantages in terms of time and expenses compared to neutron irradiation. Ion irradiation is expected to greatly contribute to the development of Fusion and Gen IV materials. Ions have short penetration depth, and they induce continuously varying dose rate over the penetration depth. Although it depends on the energy and species of incident ions, the depth of ion-irradiated region is in general on the order of a few micron meters. Depth controlled probing technique is required to measure the mechanical properties of ion-irradiated layer, and nanoindentation is widely used. During nanoindentation, a hard tip with known properties is pressed into a material which has unknown properties. The depth of penetration and load on the indenter are recorded during loading and unloading. The initial Loading depth curve follows the Hertzian elastic solution, and at a certain load, a sudden displacement excursion occurs in indenter depth and then hardening follows. This is called 'Pop-in' event, and since residual impression can be found only after pop-ins, the pop-in is regarded as the onset of plasticity. The objectives of this research are to investigate the effects of ion irradiation on popins, and to examine dislocation nucleation and propagation at the onset of plasticity by using MD simulations

  18. The potential application of ultra-nanocrystalline diamond films for heavy ion irradiation detection

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Huang-Chin [Department of Physics, Tamkang University, Tamsui, New-Taipei, Taiwan 251 (China); Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, 300 (China); Chen, Shih-Show [Department of Physics, Tamkang University, Tamsui, New-Taipei, Taiwan 251 (China); Department of Information Technology and Mobile Communication, Taipei College of Maritime Technology, Tamsui, New-Taipei, Taiwan 251 (China); Wang, Wei-Cheng; Lin, I-Nan; Chang, Ching-Lin [Department of Physics, Tamkang University, Tamsui, New-Taipei, Taiwan 251 (China); Lee, Chi-Young [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, 300 (China); Guo, Jinghua [Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States)

    2013-06-15

    The potential of utilizing the ultra-nanocrystalline (UNCD) films for detecting the Au-ion irradiation was investigated. When the fluence for Au-ion irradiation is lower than the critical value (f{sub c}= 5.0 Multiplication-Sign 10{sup 12} ions/cm{sup 2}) the turn-on field for electron field emission (EFE) process of the UNCD films decreased systematically with the increase in fluence that is correlated with the increase in sp{sup 2}-bonded phase ({pi}{sup *}-band in EELS) due to the Au-ion irradiation. The EFE properties changed irregularly, when the fluence for Au-ion irradiation exceeds this critical value. The transmission electron microscopic microstructural examinations, in conjunction with EELS spectroscopic studies, reveal that the structural change preferentially occurred in the diamond-to-Si interface for the samples experienced over critical fluence of Au-ion irradiation, viz. the crystalline SiC phase was induced in the interfacial region and the thickness of the interface decreased. These observations implied that the UNCD films could be used as irradiation detectors when the fluence for Au-ion irradiation does not exceed such a critical value.

  19. Ion irradiation of AZO thin films for flexible electronics

    Energy Technology Data Exchange (ETDEWEB)

    Boscarino, Stefano; Torrisi, Giacomo; Crupi, Isodiana [IMM-CNR and Dipartimento di Fisica e Astronomia, Università di Catania, via S. Sofia 64, 95123 Catania (Italy); Alberti, Alessandra [CNR-IMM, via Strada VIII 5, 95121 Catania (Italy); Mirabella, Salvatore; Ruffino, Francesco [IMM-CNR and Dipartimento di Fisica e Astronomia, Università di Catania, via S. Sofia 64, 95123 Catania (Italy); Terrasi, Antonio, E-mail: antonio.terrasi@ct.infn.it [IMM-CNR and Dipartimento di Fisica e Astronomia, Università di Catania, via S. Sofia 64, 95123 Catania (Italy)

    2017-02-01

    Highlights: • Evidence of electrical good quality AZO ultra thin films without thermal annealing. • Evidence of the main role of Oxygen vs. structural parameters in controlling the electrical performances of AZO. • Evidence of the role of the ion irradiation in improving the electrical properties of AZO ultra thin films. • Synthesis of AZO thin films on flexible/plastic substrates with good electrical properties without thermal processes. - Abstract: Aluminum doped Zinc oxide (AZO) is a promising transparent conductor for solar cells, displays and touch-screen technologies. The resistivity of AZO is typically improved by thermal annealing at temperatures not suitable for plastic substrates. Here we present a non-thermal route to improve the electrical and structural properties of AZO by irradiating the TCO films with O{sup +} or Ar{sup +} ion beams (30–350 keV, 3 × 10{sup 15}–3 × 10{sup 16} ions/cm{sup 2}) after the deposition on glass and flexible polyethylene naphthalate (PEN). X-ray diffraction, optical absorption, electrical measurements, Rutherford Backscattering Spectrometry and Atomic Force Microscopy evidenced an increase of the crystalline grain size and a complete relief of the lattice strain upon ion beam irradiation. Indeed, the resistivity of thin AZO films irradiated at room temperature decreased of two orders of magnitude, similarly to a thermal annealing at 400 °C. We also show that the improvement of the electrical properties does not simply depend on the strain or polycrystalline domain size, as often stated in the literature.

  20. Ion irradiation effect of alumina and its luminescence

    Energy Technology Data Exchange (ETDEWEB)

    Aoki, Yasushi; Yamamoto, Shunya; Naramoto, Hiroshi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment; My, N T

    1997-03-01

    The luminescence spectra of single crystalline alpha-alumina and ruby which has 0.02% of Cr{sub 2}O{sub 3} as a impurity, induced by 200 keV He{sup +} and Ar{sup +} irradiation were measured at room temperature as a function of irradiation dose. The analysis of the measured spectra showed the existence of three main luminescence features in the wavelength region of 250 to 350 nm, namely anionic color centers, F-center at 411 nm and F{sup +}-center at 330 nm and a band observed around 315 nm. As alpha-alumina was irradiated with He{sup +}, F-center and F{sup +}-center luminescence grew and decayed, but the behaviors of those were different from each other. It seems that a concentration quenching occurred on the F-center luminescence in the dose range above 1x10{sup 14} He/cm{sup 2}. Furthermore, F-center luminescence was strongly suppressed in ruby, compared with that in alumina. On the other hand, the luminescence band around 315 nm appeared only in the early stage of irradiation and did not show its growth part. The dose dependent behavior was similar to that of Cr{sup 3+} emission at 695 nm (R-line) in ruby in both cases of He{sup +} and Ar{sup +} irradiation. Based on the experimental results mentioned above, the processes of defect formation and excitation in alumina in the early stage of ion irradiation will be discussed. (author)

  1. Investigations of Atomic Transport Induced by Heavy Ion Irradiation

    Science.gov (United States)

    Banwell, Thomas Clyde

    The mechanisms of atomic transport induced by ion irradiation generally fall into the categories of anisotropic or isotropic processes. Typical examples of these are recoil implantation and cascade mixing, respectively. We have measured the interaction of these processes in the mixing of Ti/SiO(,2)/Si, Cr/SiO(,2)/Si and Ni/SiO(,2)/Si multi-layers irradiated with Xe at fluences of 0.01 - 10 x 10('15)cm('-2). The fluence dependence of net metal transport into the underlying layers was measured with different thicknesses of SiO(,2) and different sample temperatures during irradiation (-196 to 500C). There is a linear dependence at low fluences. At high fluences, a square-root behavior predominates. For thin SiO(,2) layers (primary recoils is quite pronounced since the gross mixing is small. A significant correlation exists between the mixing and the energy deposited through elastic collisions F(,D ). Several models are examined in an attempt to describe the transport process in Ni/SiO(,2). It is likely that injection of Ni by secondary recoil implantation is primarily responsible for getting Ni into the SiO(,2). Secondary recoil injection is thought to scale with F(,D). Trends in the mixing rates indicate that the dominant mechanism for Ti and Cr could be the same as for Ni. The processes of atomic transport and phase formation clearly fail to be separable at higher temperatures. A positive correlation with chemical reactivity emerges at higher irradiation temperatures. The temperature at which rapid mixing occurs is not much below that for spontaneous thermal reaction. Less Ni is retained in the SiO(,2) at high irradiation temperatures. Ni incorporated in the SiO(,2) by low temperature irradiation is not expelled during a consecutive high temperature irradiation. The Ni remains trapped within larger clusters during a sequential 500C irradiation. (Abstract shortened with permission of author.).

  2. Data acquisition system for light-ion irradiation creep experiment

    International Nuclear Information System (INIS)

    Hendrick, P.L.; Whitaker, T.J.

    1979-07-01

    Software was developed for a PDP11V/03-based data acquisition system to support the Light-Ion Irradiation Creep Experiment installed at the University of Washington Tandem Van de Graaff Accelerator. The software consists of a real-time data acquisition and storage program, DAC04, written in assembly language. This program provides for the acquisition of up to 30 chennels at 100 Hz, data averaging before storage on disk, alarming, data table display, and automatic disk switching. All analog data are acquired via an analog-to-digital converter subsystem having a resolution of 14 bits, a maximum throughput of 20 kHz, and an overall system accuracy of +-0.01%. These specifications are considered essential for the long-term measurement of irradiation creep strains and temperatures during the light-ion bombardment of irradiation creep specimens. The software package developed also contains a collection of FORTRAN programs designed to monitor a test while in progress. These programs use the foreground/background feature of the RT-11 operating system. The background programs provide a variety of services. The program, GRAFTR, allows transient data (i.e., prior to averaging) to be graphed at the graphics terminal. The program, GRAFAV, allows averaged data to be read from disk and displayed graphically at the terminal. The program, TYPAV, reads averaged data from disk and displays it at the terminal in tabular form. Other programs allow text messages to be written to disk, read from disk, and allow access to DAC04 initialization data. 5 figures, 18 tables

  3. Low-energy neutrino measurements

    Indian Academy of Sciences (India)

    2012-10-05

    Oct 5, 2012 ... Abstract. Low-energy solar neutrino detection plays a fundamental role in ... the experimental point of view, there are multiple ways to shed light among the different .... compared to the two metallicity expectations [16]. ..... from the Earth; solar neutrinos; indirect dark matter searches) and GeV physics (pro-.

  4. Low-energy nuclear physics

    International Nuclear Information System (INIS)

    1985-01-01

    The 1985 annual report of the Schuster Laboratory, Manchester University, England, on low-energy nuclear physics, is presented. The report includes experiments involving: high spin states, nuclei far from stability, reactions and fission, spectroscopy and related subjects. Technical developments are also described. (U.K.)

  5. Low-energy neutrino measurements

    Indian Academy of Sciences (India)

    Low-energy solar neutrino detection plays a fundamental role in understanding both solar astrophysics and particle physics. After introducing the open questions on both fields, we review here the major results of the last two years and expectations for the near future from Borexino, Super-Kamiokande, SNO and KamLAND ...

  6. Ion irradiation effects in structural and magnetic properties of Co/Cu multilayers

    International Nuclear Information System (INIS)

    Sakamoto, Isao; Okazaki, Satoshi; Koike, Masaki; Honda, Shigeo

    2012-01-01

    400 keV Ar ion (the Ar ion) and 50 keV He ion (the He ion) irradiations were performed in order to elucidate roles of Co/Cu interfacial structures in physical origins of giant magnetoresistance (GMR) in the [Co (2 nm)/Cu (2 nm)] 30 multilayers (MLs). The magnetoresistance (MR) ratio after the Ar ion irradiation decreases abruptly with increasing Ar ion fluence. On the other hand, the MR ratio after the He ion irradiation decreases slowly with increasing He ion fluence. The Ar ion irradiation induces the decrease in the difference (R max − R sat ) between the maximum resistance (R max ) and the saturated resistance (R sat ) under in-plane magnetic field and the increase in the R sat , although the effect of the He ion irradiation is not remarkable. The decrease in the (R max − R sat ) rather than the increase in the R sat seems to be effective for the decrease in the MR ratios after the Ar ion and the He ion irradiation. The increase in the R sat implies the mixing of Co atoms in Cu layers. The antiferromagnetic coupling fraction (AFF) estimated from the magnetization curves after the Ar ion and the He ion irradiation shows the similar behavior with the MR ratio as a function of ion fluence. Therefore, although the degrees of the irradiation effects by the Ar ion and the He ions are different, we suggest the relation between the GMR and the AFF affected by the ion-induced interfacial structures accompanied with the atomic mixing in the interfacial region.

  7. Low Energy Neutrino Cross Sections

    International Nuclear Information System (INIS)

    Zeller, G.P.

    2004-01-01

    Present atmospheric and accelerator based neutrino oscillation experiments operate at low neutrino energies (Ev ∼ 1 GeV) to access the relevant regions of oscillation parameter space. As such, they require precise knowledge of the cross sections for neutrino-nucleon interactions in the sub-to-few GeV range. At these energies, neutrinos predominantly interact via quasi-elastic (QE) or single pion production processes, which historically have not been as well studied as the deep inelastic scattering reactions that dominate at higher energies.Data on low energy neutrino cross sections come mainly from bubble chamber, spark chamber, and emulsion experiments that collected their data decades ago. Despite relatively poor statistics and large neutrino flux uncertainties, these measurements provide an important and necessary constraint on Monte Carlo models in present use. The following sections discuss the current status of QE, resonant single pion, coherent pion, and single kaon production cross section measurements at low energy

  8. A low energy solar town

    Energy Technology Data Exchange (ETDEWEB)

    Svendsen, Svend; Balocco, Carla

    1998-12-31

    The use of solar energy at large scale is necessary to support the energy savings and a more efficient energy use, like besides the quality of the ambient and the quality of the available energy sources. The solar heating systems with seasonal storage can be combined with heat from refuse incineration plants and other renewable heat sources. These systems combined with district heating are an example of the sustainable energy planning and the reduction of the environmental stress. Strategies for sustainability in the settlements can be defined by and energy model to planning that individuates development and economic and financial supports to. The aim of the work concerns the development of a small sun city with no use of fossil fuels. The new low energy solar town is an idealised urban an energy system. The studied settlement regards one thousand new low-energy houses supplied by a district heating with a central solar heating system with seasonal heat storage. The heating and ventilation demand in the studied low energy buildings are less than 40 kWh/m{sup 2}/year, the electricity demand is less than 2000 kWh per house year. The result of the work is an useful tool to the energy planning of the urban areas and it is also a necessary support to the political and energetic decisions. (EG) 58 refs.

  9. A low energy solar town

    International Nuclear Information System (INIS)

    Svendsen, Svend; Balocco, Carla

    1998-01-01

    The use of solar energy at large scale is necessary to support the energy savings and a more efficient energy use, like besides the quality of the ambient and the quality of the available energy sources. The solar heating systems with seasonal storage can be combined with heat from refuse incineration plants and other renewable heat sources. These systems combined with district heating are an example of the sustainable energy planning and the reduction of the environmental stress. Strategies for sustainability in the settlements can be defined by and energy model to planning that individuates development and economic and financial supports to. The aim of the work concerns the development of a small sun city with no use of fossil fuels. The new low energy solar town is an idealised urban an energy system. The studied settlement regards one thousand new low-energy houses supplied by a district heating with a central solar heating system with seasonal heat storage. The heating and ventilation demand in the studied low energy buildings are less than 40 kWh/m 2 /year, the electricity demand is less than 2000 kWh per house year. The result of the work is an useful tool to the energy planning of the urban areas and it is also a necessary support to the political and energetic decisions. (EG) 58 refs

  10. Quantitative analysis of genes regulating sensitivity to heavy ion irradiation in cultured cell lines of malignant choroid melanoma

    International Nuclear Information System (INIS)

    Kumagai, Ken; Adachi, Nanao; Nimura, Yoshinori

    2004-01-01

    As a treatment strategy for malignant melanoma, heavy ion irradiation has been planned in National Institute of Radiological Sciences (NIRS). However, the molecular biology of the malignant melanoma cell after irradiation of heavy ion is still unknown. In this study, we used resistant and sensitive cell lines of malignant melanoma to study the effects of heavy ion irradiation. Furthermore, gene expression profiling of early response genes for heavy ion irradiation was carried out on these cell lines using microarray technology. (author)

  11. Quantitative analysis of genes regulating sensitivity to heavy ion irradiation in cultured cell lines of malignant choroid melanoma

    International Nuclear Information System (INIS)

    Kumagai, Ken; Nimura, Yoshinori; Kato, Masaki; Seki, Naohiko; Miyahara, Nobuyuki; Aoki, Mizuho; Shino, Yayoi; Furusawa, Yoshiya; Mizota, Atsushi

    2005-01-01

    As a treatment strategy for malignant melanoma, heavy ion irradiation has been planned in National Institute of Radiological Sciences (NIRS). However, the molecular biology of the malignant melanoma cell after irradiation of heavy ion is still unknown. In this study, we used resistant and sensitive cell lines of malignant melanoma to study the effects of heavy ion irradiation. Furthermore, gene expression profiling of early response genes for heavy ion irradiation was carried out on these cell lines using microarray technology. (author)

  12. Ion Irradiation Damage in Zirconate and Titanate Ceramics for Pu Disposition

    International Nuclear Information System (INIS)

    Stewart, Martin W.; Begg, Bruce D.; Finnie, K.; Colella, Michael; Li, H.; McLeod, Terry; Smith, Katherine L.; Zhang, Zhaoming; Weber, William J.; Thevuthasan, Suntharampillai

    2004-01-01

    In this paper, we discuss the effect of ion irradiation on pyrochlore-rich titanate and defect-fluorite zirconate ceramics designed for plutonium immobilization. Samples, with Ce as an analogue for Pu, were made via oxide routes and consolidated by cold-pressing and sintering. Ion irradiation damage was carried out with 2 MeV Au2+ ions to a fluence of 5 ions nm-2 in the accelerator facilities within the Environmental Molecular Sciences Laboratory at Pacific Northwest National Laboratory. Irradiated and non-irradiated samples were examined by x-ray diffraction, scanning and transmission electron microscopy, x-ray photoelectron and infrared spectroscopy, and spectroscopic ellipsometry. Samples underwent accelerated leach testing at pH 1.75 (nitric acid) at 90 C for 28 days. The zirconate samples were more ion-irradiation damage resistant than the titanate samples, showing little change after ion-irradiation whereas the titanate samples formed an amorphous surface layer ∼ 500 nm thick. While all samples had high aqueous durability, the titanate leach rate was ∼ 5 times that of the zirconate. The ion-irradiation increased the leach rate of the titanate without impurities by ∼ 5 times. The difference in the leach rates between irradiated and unirradiated zirconate samples is small. However, the zirconates were less able to incorporate impurities than the titanate ceramics and required higher sintering temperatures, ∼ 1500 C compared to 1350 C for the titanates.

  13. Effect of 50 MeV Li3+ ion irradiation on electrical characteristics of high speed NPN power transistor

    International Nuclear Information System (INIS)

    Dinesh, C.M.; Ramani; Radhakrishna, M.C.; Dutt, R.N.; Khan, S.A.; Kanjilal, D.

    2008-01-01

    Silicon NPN overlay RF power high speed commercial bipolar junction transistors (BJTs) find applications in military, space and communication equipments. Here we report the effect of 50 MeV Li 3+ ion irradiation in the fluence range 1 x 10 11 -1.8 x 10 12 ions cm -2 on NPN power transistor. The range (R), electronic energy loss (S e ), nuclear energy loss (S n ), total ionizing dose (TID) and total displacement damage (D d ) in the silicon target are calculated from TRIM Monte Carlo Code. Output resistance is 3.568 x 10 4 Ω for unirradiated device and it increases to 6 x 10 7 Ω as the fluence is increased from 1 x 10 11 to 1.8 x 10 12 ions cm -2 . The capacitance of the emitter-base junction of the transistor decreases and dielectric loss of the emitter-base junction increases with increase in ion fluence. The built in voltage of the unirradiated sample is 0.5 V and it shifts to 0.4 V after irradiation at fluence of 1.8 x 10 12 ions cm -2 and the corresponding doping density reduced to 5.758 x 10 16 cm -3 . The charge carrier removal rate varies linearly with the increase in ion fluence

  14. Heavy ion irradiation induces autophagy in irradiated C2C12 myoblasts and their bystander cells

    International Nuclear Information System (INIS)

    Hino, Mizuki; Tajika, Yuki; Hamada, Nobuyuki

    2010-01-01

    Autophagy is one of the major processes involved in the degradation of intracellular materials. Here, we examined the potential impact of heavy ion irradiation on the induction of autophagy in irradiated C2C12 mouse myoblasts and their non-targeted bystander cells. In irradiated cells, ultrastructural analysis revealed the accumulation of autophagic structures at various stages of autophagy (id est (i.e.) phagophores, autophagosomes and autolysosomes) within 20 min after irradiation. Multivesicular bodies (MVBs) and autolysosomes containing MVBs (amphisomes) were also observed. Heavy ion irradiation increased the staining of microtubule-associated protein 1 light chain 3 and LysoTracker Red (LTR). Such enhanced staining was suppressed by an autophagy inhibitor 3-methyladenine. In addition to irradiated cells, bystander cells were also positive with LTR staining. Altogether, these results suggest that heavy ion irradiation induces autophagy not only in irradiated myoblasts but also in their bystander cells. (author)

  15. Preliminary study on mutagenic effects of heavy ions irradiation on maize inbred lines

    International Nuclear Information System (INIS)

    Yu Lixia; Li Wenjian; Xie Hongmei; Chen Xuejun; Chen Jing

    2010-01-01

    In order to study mutagenic effects of different heavy ions irradiation on maize inbred lines,corn seeds of Zheng58, Lu9801, Jinxiang4C-1, CSR24001, 308 and 478 were irradiated with 12 C 6+ and 36 Ar 18+ ions. The experimental results showed that the germination rate and planting percent were different after irradiation. The wettish seeds had higher sensibility to heavy ion irradiation. The leaf type of the plant appeared visible changes in M 1 generation. In M 2 generation, great changes had taken place in economic traits, many of which are beneficial mutation. Some beneficia1 mutation could be stably inherited in M 3 generation. From the above, it can be predicted that heavy ions irradiation is an effective means of genetic improvement of maize. (authors)

  16. Low energy bar pp physics

    International Nuclear Information System (INIS)

    Amsler, C.; Crowe, K.

    1989-02-01

    A detailed investigation of proton-antiproton interactions at low energy has become feasible with the commissioning of the LEAR facility in 1983. We shall shortly review the status of bar pp annihilation at rest and the physics motivations for second generation experiments with the Crystal Barrel detector. This type of detector would be adequate for the study of both Kp and bar pp interactions on an extracted beam of the KAON Factory. We shall conclude with a few remarks on the physics opportunities with bar p's at the KAON Factory which, in our opinion, will not be covered by the present LEAR facility. 11 refs., 10 figs., 2 tabs

  17. Microstructural and microchemical evolution in vanadium alloys by heavy ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Sekimura, Naoto; Kakiuchi, Hironori; Shirao, Yasuyuki; Iwai, Takeo [Tokyo Univ. (Japan)

    1996-10-01

    Microstructural and microchemical evolution in vanadium alloys were investigated using heavy ion irradiation. No cavities were observed in V-5Cr-5Ti alloys irradiated to 30 dpa at 520 and 600degC. Energy dispersive X-ray spectroscopy analyses showed that Ti peaks around grain boundaries. Segregation of Cr atoms was not clearly detected. Co-implanted helium was also found to enhance dislocation evolution in V-5Cr-5Ti. High density of matrix cavities were observed in V-5Fe alloys irradiated with dual ions, whereas cavities were formed only around grain boundaries in single ion irradiated V-5Fe. (author)

  18. In situ studies of the kinetics of surface topography development during ion irradiation

    International Nuclear Information System (INIS)

    Levinskas, R.; Pranevicius, L.

    1996-01-01

    Studies of the mechanical properties of the materials affected by 25-200 keV H + , He + , Ne + and Ar + ion irradiation in the range of fluences up to 2 · 10 17 cm -2 based on the analysis of acoustic emission signals, kinetics of the surface deformations measured by laser interferometric technique and the variations of the surface acoustic waves propagation velocity are conducted. The acoustic emissions source mechanisms under various ion irradiation conditions are discussed and relative contribution various possible mechanism are indicated. The correlation of experimental results obtained by different methods of analysis is done. (author). 11 refs, 5 figs

  19. Origins of ion irradiation-induced Ga nanoparticle motion on GaAs surfaces

    International Nuclear Information System (INIS)

    Kang, M.; Wu, J. H.; Chen, H. Y.; Thornton, K.; Goldman, R. S.; Sofferman, D. L.; Beskin, I.

    2013-01-01

    We have examined the origins of ion irradiation-induced nanoparticle (NP) motion. Focused-ion-beam irradiation of GaAs surfaces induces random walks of Ga NPs, which are biased in the direction opposite to that of ion beam scanning. Although the instantaneous NP velocities are constant, the NP drift velocities are dependent on the off-normal irradiation angle, likely due to a difference in surface non-stoichiometry induced by the irradiation angle dependence of the sputtering yield. It is hypothesized that the random walks are initiated by ion irradiation-induced thermal fluctuations, with biasing driven by anisotropic mass transport

  20. Helium ion irradiated polyamidoimide films: a FT-IR and Raman follow-up

    International Nuclear Information System (INIS)

    Merhari, L.; Belorgeot, C.; Quintard, P.

    1994-01-01

    The evolution of polyamidoimide (PAI) at a molecular level has been studied by infrared and Raman spectroscopy after several He + ion irradiations. The infrared investigation made it possible to study the appearance of CO 2 and HCN molecules and, for example, to correlate CO 2 with C-O vanishing bands during He + ion irradiation. Preliminary Raman spectroscopy results confirmed a graphite-like structure for strongly irradiated PAI. In situ spectroscopic measurements versus fluence during irradiation with other ions are expected to give further information about the polymer structure evolution. (6 figures, 10 references) (UK)

  1. Ion irradiation effects on ionic liquids interfaced with rf discharge plasmas

    International Nuclear Information System (INIS)

    Baba, K.; Kaneko, T.; Hatakeyama, R.

    2007-01-01

    The availability of plasma ion irradiation toward a gas-liquid interface is investigated in a rf discharge system incorporating an ionic liquid. The introduction of the ionic liquid to the plasma causes the formation of a sheath electric field on the ionic liquid surface, resulting in the acceleration of the ions to the ionic liquid and the generation of secondary electrons from the ionic liquid by the ion irradiation. These effects are found to advance the discharge process and enhance the plasma production

  2. Effect of ion irradiation on structural and electrical properties of BSCC thin films

    International Nuclear Information System (INIS)

    Hishita, Shunichi; Kim, Sang Sub; Moon, Jong Ha

    2003-01-01

    Effects of oxygen ion irradiation and subsequent thermal annealing of Bi 2 Sr 2 Ca 1 Cu 2 O x (Bi-2212) films deposited on SrTiO 3 (001) using pulsed laser deposition were studied. It was found that compared to the simply heated film the ion irradiated and thermally annealed one showed a leaf-like morphology and an improved conducting behavior of Bi-2212 phase. Our results suggest that amorphization by oxygen ion bombardment and recrystallization by thermal annealing might be a suitable process for the preparation of patterned c-axis oriented Bi-2212 films with appropriate superconducting properties. (author)

  3. Improving ion irradiated high Tc Josephson junctions by annealing: The role of vacancy-interstitial annihilation

    International Nuclear Information System (INIS)

    Sirena, M.; Matzen, S.; Bergeal, N.; Lesueur, J.; Faini, G.; Bernard, R.; Briatico, J.; Crete, D. G.

    2007-01-01

    The authors have studied the annealing effect in the transport properties of high T c Josephson junctions (JJs) made by ion irradiation. Low temperature annealing (80 deg. C) increases the JJ coupling temperature (T J ) and the I c R n product, where I c is the critical current and R n the normal resistance. They have found that the spread in JJ characteristics can be reduced by sufficient long annealing times, increasing the reproducibility of ion irradiated Josephson junctions. The characteristic annealing time and the evolution of the spread in the JJ characteristics can be explained by a vacancy-interstitial annihilation process rather than by an oxygen diffusion one

  4. The low-energy geothermics

    International Nuclear Information System (INIS)

    Anon.

    1995-01-01

    Low-energy geothermal resources are characterized by temperatures ranging from 30 to 100 C. The principal worldwide applications are: towns and greenhouses heating, spa bathing, agriculture products drying, etc.. Sources depth ranges from 1500 to 2500 m in porous and permeable formations (sandstones, sands, conglomerates, limestones..) carrying aquifers. The worldwide installed power was of about 11500 MWth in 1990, with an annual production of about 36000 GWh (about 1% of worldwide energy consumption). The annual production rate is estimated to 10% and would represent a 30000 and 80000 MWth power in 2000 and 2010, respectively. In France, low-energy geothermal resources are encountered principally in Mesozoic sediments of the Parisian and Aquitanian basins. French geothermics has developed during the last 30 years and principally between 1980 and 1985 after the second petroleum crack. After 1985, the decay of fossil fuel costs and the development of corrosion problems in the geothermal wells have led to the abandonment of the less productive fields and to the study of technical solutions to solve the corrosion problems. (J.S.). 1 fig., 5 photos

  5. Low-energy mechanical ventilation

    DEFF Research Database (Denmark)

    Andersen, Claus Wessel; Hviid, Christian Anker

    2014-01-01

    and with as little energy consumption as 41.1 kWh/m2/year including heating and all building services with no use of renewable energy such as PVcells or solar heating. One of the key means of reaching the objectives was to implement mechanical ventilation with low pressure loss and therefore low energy consumption....... The project consists of two buildings, building one is 6 stories high, and building two is 4 stories high. The buildings have a gross area of 50,500 m2 including underground parking. The ventilation and indoor climate concept was to use mechanical ventilation together with mechanical cooling and fanassisted......, with an average of 1.1 kJ/m3. The yearly mean SFP based on estimated runtime is approx. 0.8 kJ/m3. The case shows the unlocked potential that lies within mechanical ventilation for nearzero energy consuming buildings....

  6. Quantum scattering at low energies

    DEFF Research Database (Denmark)

    Derezinski, Jan; Skibsted, Erik

    For a class of negative slowly decaying potentials, including with , we study the quantum mechanical scattering theory in the low-energy regime. Using modifiers of the Isozaki--Kitada type we show that scattering theory is well behaved on the {\\it whole} continuous spectrum of the Hamiltonian......, including the energy . We show that the --matrices are well-defined and strongly continuous down to the zero energy threshold. Similarly, we prove that the wave matrices and generalized eigenfunctions are norm continuous down to the zero energy if we use appropriate weighted spaces. These results are used...... from positive energies to the limiting energy . This change corresponds to the behaviour of the classical orbits. Under stronger conditions we extract the leading term of the asymptotics of the kernel of at its singularities; this leading term defines a Fourier integral operator in the sense...

  7. Quantum scattering at low energies

    DEFF Research Database (Denmark)

    Derezinski, Jan; Skibsted, Erik

    2009-01-01

    For a class of negative slowly decaying potentials, including V(x):=−γ|x|−μ with 0quantum mechanical scattering theory in the low-energy regime. Using appropriate modifiers of the Isozaki–Kitada type we show that scattering theory is well behaved on the whole continuous spectrum...... of the Hamiltonian, including the energy 0. We show that the modified scattering matrices S(λ) are well-defined and strongly continuous down to the zero energy threshold. Similarly, we prove that the modified wave matrices and generalized eigenfunctions are norm continuous down to the zero energy if we use...... of the kernel of S(λ) experiences an abrupt change from passing from positive energies λ to the limiting energy λ=0 . This change corresponds to the behaviour of the classical orbits. Under stronger conditions one can extract the leading term of the asymptotics of the kernel of S(λ) at its singularities....

  8. Theory of low energy collisions

    International Nuclear Information System (INIS)

    Sparenberg, J.M.

    2007-01-01

    The basic notions of low-energy quantum scattering theory are introduced (cross sections, phase shifts, resonances,... ), in particular for positively-charged particles, in view of nuclear physics applications. An introduction to the reaction-matrix (or R-matrix) method is then proposed, as a tool to both solve the Schroedinger equation describing collisions and fit experimental data phenomenologically. Most results are established without proof but with a particular emphasis on their intuitive understanding and their possible analogs in classical mechanics. Several choices are made consequently: (i) the text starts with a detailed reminder of classical scattering theory, (ii) the concepts are first introduced in ideal theoretical cases before going to the more complicated formalism allowing the description of realistic experimental situations, (iii) a single example is used throughout nearly the whole text, (iv) all concepts are established for the elastic scattering of spinless particles, with only a brief mention of their multichannel generalization at the end of the text. (author)

  9. UMo nuclear fuels behaviour under heavy ion irradiation: a μ-XAS study

    International Nuclear Information System (INIS)

    Palancher, H.; Martin, P.; Dubois, S.; Valot, C.; Sabathier, C.; Palancher, H.; Nassif, V.; Proux, O.; Hazemann, J.L.; Wieschalla, N.; Petry, W.; Jarousse, C.

    2007-01-01

    Full text of publication follows. A worldwide program encourages the use of low enriched uranium (LEU, 235 U 235 U concentration up to 93 wt. %). Due to the decrease in 235 U enrichment for the conversion to LEU, the total density of uranium atoms in the fuel must be increased accordingly. To preserve the neutron flux, metallic uranium alloys could be the best fuel material. The fuel, which consists of UMo alloy spherical particles surrounded by an Al matrix (cf. Figure 1-A), is rolled between two aluminium claddings. Post-irradiation examinations of U-7 wt%Mo demonstrated its strong potentialities as fuel but they also pointed out its interaction with aluminium (cf. Figure 1-B). In certain cases this interaction can cause a break-away swelling of the plate. The aim of this project is the understanding of: - the phenomena driving the growth of the interaction layer. - the influence on interaction layer composition of limited adjunction of elements (silicon...) to the Al matrix. To overcome the difficulties inherent to the in-pile irradiated samples, an out-of-pile methodology (collaboration between CEA, FRM II and CERCA) has been developed based on heavy ion irradiation. This methodology enables to simulate the fission fragment damages using a 80 MeV iodine beam at the Maier Leibnitz laboratory (Garching, Germany). After irradiation, samples are characterised at micrometer scale by microscopy (SEM coupled with EDX) and X-Ray techniques (XRD and XAS). The irradiation (final dose: 2 x 10 17 at/cm 2 ) of undoped U-7 wt%Mo fuel plates leads to the formation of an interaction layer surrounding each fuel particles (cf. Figure 1-C). μ-XRD analysis performed at the ESRF (ID18f) showed only the presence of UAl 3 phase in the interaction layer. Same results have been obtained on in-pile irradiated fuel by Sears et al using neutron diffraction confirming the interest of the developed methodology. However the behaviour of the Mo atoms in the interaction layer could not be

  10. Evaluation of strain-rate sensitivity of ion-irradiated austenitic steel using strain-rate jump nanoindentation tests

    Energy Technology Data Exchange (ETDEWEB)

    Kasada, Ryuta, E-mail: r-kasada@iae.kyoto-u.ac.jp [Institute of Advanced Energy, Kyoto University Gokasho, Uji 611-0011, Kyoto (Japan); Konishi, Satoshi [Institute of Advanced Energy, Kyoto University Gokasho, Uji 611-0011, Kyoto (Japan); Hamaguchi, Dai; Ando, Masami; Tanigawa, Hiroyasu [Japan Atomic Energy Agency, Rokkasho, Aomori (Japan)

    2016-11-01

    Highlights: • We examined strain-rate jump nanoindentation on ion-irradiated stainless steel. • We observed irradiation hardening of the ion-irradiated stainless steel. • We found that strain-rate sensitivity parameter was slightly decreased after the ion-irradiation. - Abstract: The present study investigated strain-rate sensitivity (SRS) of a single crystal Fe–15Cr–20Ni austenitic steel before and after 10.5 MeV Fe{sup 3+} ion-irradiation up to 10 dpa at 300 °C using a strain-rate jump (SRJ) nanoindentation test. It was found that the SRJ nanoindentation test is suitable for evaluating the SRS at strain-rates from 0.001 to 0.2 s{sup −1}. Indentation size effect was observed for depth dependence of nanoindentation hardness but not the SRS. The ion-irradiation increased the hardness at the shallow depth region but decreased the SRS slightly.

  11. Accumulation and recovery of defects in ion-irradiated nanocrystalline gold

    Energy Technology Data Exchange (ETDEWEB)

    Chimi, Y. E-mail: chimi@popsvr.tokai.jaeri.go.jp; Iwase, A.; Ishikawa, N.; Kobiyama, M.; Inami, T.; Okuda, S

    2001-09-01

    Effects of 60 MeV {sup 12}C ion irradiation on nanocrystalline gold (nano-Au) are studied. The experimental results show that the irradiation-produced defects in nano-Au are thermally unstable because of the existence of a large volume fraction of grain boundaries. This suggests a possibility of the use of nanocrystalline materials as irradiation-resistant materials.

  12. Investigating change of properties in gallium ion irradiation patterned single-layer graphene

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Quan, E-mail: wangq@mail.ujs.edu.cn [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China); Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (China); Dong, Jinyao; Bai, Bing [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China); Xie, Guoxin [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China)

    2016-10-14

    Besides its excellent physical properties, graphene promises to play a significant role in electronics with superior properties, which requires patterning of graphene for device integration. Here, we presented the changes in properties of single-layer graphene before and after patterning using gallium ion beam. Combined with Raman spectra of graphene, the scanning capacitance microscopy (SCM) image confirmed that a metal–insulator transition occurred after large doses of gallium ion irradiation. The changes in work function and Raman spectra of graphene indicated that the defect density increased as increasing the dose and a structural transition occurred during gallium ion irradiation. The patterning width of graphene presented an increasing trend due to the scattering influence of the impurities and the substrate. - Highlights: • The scanning capacitance microscopy image confirmed a metal–insulator transition occurred after large doses of gallium ion irradiation. • The changes indicated the defect density increased as increasing the dose and a structural transition occurred during gallium ion irradiation. • The patterning width of graphene presented a increasing trend due to the scattering influence of the impurities and the substrate.

  13. Heavy ion irradiation effects of polymer film on absorption of light

    Energy Technology Data Exchange (ETDEWEB)

    Kasai, Noboru; Seguchi, Tadao [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment; Arakawa, Tetsuhito

    1997-03-01

    Ion irradiation effects on the absorption of light for three types of polymer films; polyethylene-terephthalate (PET), polyethylene-naphthalate (PEN), and polyether-ether-ketone (PEEK) were investigated by irradiation of heavy ions with Ni{sup 4+}(15MeV), O{sup 6+}(160MeV), and Ar{sup 8+}(175MeV), and compared with electron beams(EB) irradiation. The change of absorption at 400nm by a photometer was almost proportional to total dose for ions and EB. The absorption per absorbed dose was much high in Ni{sup 4+}, but rather small in O{sup 6+} and Ar{sup 8+} irradiation, and the absorption by EB irradiation was accelerated by the temperature of polymer film during irradiation. The beam heating of materials during ion irradiation was assumed, especially for Ni ion irradiation. The heavy ion irradiation effect of polymers was thought to be much affected by the ion beam heating than the linear energy transfer(LET) of radiation source. (author)

  14. Effects of cavitation on damage calculations in ion-irradiated P7 alloy

    International Nuclear Information System (INIS)

    Sindelar, R.L.; Farrens, S.N.; Kulcinski, G.L.

    1985-01-01

    The purpose of this study is to investigate the effect of voids on the depth-dependent damage energy in ion-irradiated metals. Corrections to the dose at the swelling peak will be used to obtain the swelling rate of ion-irradiated 316-type stainless steels. Samples of the P7 alloy were ion-irradiated to four fluence levels up to a peak dose level of 100 dpa at 650 0 C. The depth-dependent void parameters extracted in cross section were used to model the effect of voids on the depth-dependent damage produced during 14 MeV nickel ion irradiation. An increase in the range of damage produced from the original foil surface for the target containing voids was modeled as a first-order correction to the damage profile. A second-order effect, void straggling, was shown to cause a time-dependent decrease in the damage rate at the peak swelling depth. Corrections applied to the dose at the peak swelling depth yield swelling rates approaching 0.7%/dpa

  15. Density changes in amorphous Pd80Si20 during low temperature ion irradiation

    International Nuclear Information System (INIS)

    Schumacher, G.; Birtcher, R.C.; Rehn, L.E.

    1994-11-01

    Density changes in amorphous Pd 80 Si 20 during ion irradiation below 100K were detected by in situ HVEM measurements of the changes in specimen length as a function of ion fluence. A decrease in mass density as a function of the ion fluence was observed. The saturation value of the change in mass density was determined to be approximately -1.2%

  16. Improvement of the mechanical and frictional properties of steels by continuous and pulsed ion irradiation

    International Nuclear Information System (INIS)

    Romanov, I.G.

    1992-01-01

    Effect of continuous and powerful pulsed ion beams (PIB) on structural, mechanical, tribological properties and surface morphology of steels were investigated. The results obtained demonstrate the significant influence of ion irradiation type on microhardness, friction coefficient, wear resistance and surface roughness characteristics. Friction coefficient variation in irradiated steels is interpreted within the framework of an adhesion-deformation model

  17. Screening and identification of respiration deficiency mutants of yeasts (Saccharomyces Cerevisiae) induced by heavy ion irradiation

    International Nuclear Information System (INIS)

    Mao Shuhong; Chinese Academy of Sciences, Beijing; Jin Genming; Wei Zengquan; Xie Hongmei; Zhang Hong

    2006-01-01

    A screen of respiration deficiency mutants of Saccharomyces Cerevisiae induced by 5.19 MeV/u 22 Ne 5- ion irradiation is studied. Some respiration deficiency mutants, which are white colony phenotype in the selective culture of TTC medium, are obtained. The mutants are effectively identified by means of a new and simplified restriction analysis method. (authors)

  18. Effects of irradiation with low-energy nitrogen ion injection on root tip cells of broad bean

    International Nuclear Information System (INIS)

    Huang Yaqin; Li Jinzhe; Huang Qunce

    2012-01-01

    In order to study the cytogenetic effects of low-energy nitrogen ion irradiation, broad bean seed embryo was irradiated by different doses of nitrogen ions. Micronucleus rate, mitotic index and chromosome aberration in root-tip cells were analyzed. The results showed that the injection of ions inhibited mitosis of root tip cells, interfered the normal process of mitosis, caused aberrations of chromosome structure, behavior and number. The frequency of micronucleus and chromosomal aberrations increased with the increasing radiation dosage, while mitotic index decreased. (authors)

  19. Oxide-nitride-oxide dielectric stacks with Si nanoparticles obtained by low-energy ion beam synthesis

    International Nuclear Information System (INIS)

    Ioannou-Sougleridis, V; Dimitrakis, P; Vamvakas, V Em; Normand, P; Bonafos, C; Schamm, S; Mouti, A; Assayag, G Ben; Paillard, V

    2007-01-01

    Formation of a thin band of silicon nanoparticles within silicon nitride films by low-energy (1 keV) silicon ion implantation and subsequent thermal annealing is demonstrated. Electrical characterization of metal-insulator-semiconductor capacitors reveals that oxide/Si-nanoparticles-nitride/oxide dielectric stacks exhibit enhanced charge transfer characteristics between the substrate and the silicon nitride layer compared to dielectric stacks using unimplanted silicon nitride. Attractive results are obtained in terms of write/erase memory characteristics and data retention, indicating the large potential of the low-energy ion-beam-synthesis technique in SONOS memory technology

  20. Characterization of silicon oxynitride films prepared by the simultaneous implantation of oxygen and nitrogen ions into silicon

    International Nuclear Information System (INIS)

    Hezel, R.; Streb, W.

    1985-01-01

    Silicon oxynitride films about 5 nm in thickness were prepared by simultaneously implanting 5 keV oxygen and nitrogen ions into silicon at room temperature up to saturation. These films with concentrations ranging from pure silicon oxide to silicon nitride were characterized using Auger electron spectroscopy, electron energy loss spectroscopy and depth-concentration profiling. The different behaviour of the silicon oxynitride films compared with those of silicon oxide and silicon nitride with regard to thermal stability and hardness against electron and argon ion irradiation is pointed out. (Auth.)

  1. Luminescence imaging of water during carbon-ion irradiation for range estimation

    Energy Technology Data Exchange (ETDEWEB)

    Yamamoto, Seiichi, E-mail: s-yama@met.nagoya-u.ac.jp; Komori, Masataka; Koyama, Shuji; Morishita, Yuki; Sekihara, Eri [Radiological and Medical Laboratory Sciences, Nagoya University Graduate School of Medicine, Higashi-ku, Nagoya, Aichi 461-8673 (Japan); Akagi, Takashi; Yamashita, Tomohiro [Hygo Ion Beam Medical Center, Hyogo 679-5165 (Japan); Toshito, Toshiyuki [Department of Proton Therapy Physics, Nagoya Proton Therapy Center, Nagoya City West Medical Center, Aichi 462-8508 (Japan)

    2016-05-15

    Purpose: The authors previously reported successful luminescence imaging of water during proton irradiation and its application to range estimation. However, since the feasibility of this approach for carbon-ion irradiation remained unclear, the authors conducted luminescence imaging during carbon-ion irradiation and estimated the ranges. Methods: The authors placed a pure-water phantom on the patient couch of a carbon-ion therapy system and measured the luminescence images with a high-sensitivity, cooled charge-coupled device camera during carbon-ion irradiation. The authors also carried out imaging of three types of phantoms (tap-water, an acrylic block, and a plastic scintillator) and compared their intensities and distributions with those of a phantom containing pure-water. Results: The luminescence images of pure-water phantoms during carbon-ion irradiation showed clear Bragg peaks, and the measured carbon-ion ranges from the images were almost the same as those obtained by simulation. The image of the tap-water phantom showed almost the same distribution as that of the pure-water phantom. The acrylic block phantom’s luminescence image produced seven times higher luminescence and had a 13% shorter range than that of the water phantoms; the range with the acrylic phantom generally matched the calculated value. The plastic scintillator showed ∼15 000 times higher light than that of water. Conclusions: Luminescence imaging during carbon-ion irradiation of water is not only possible but also a promising method for range estimation in carbon-ion therapy.

  2. Luminescence imaging of water during carbon-ion irradiation for range estimation

    International Nuclear Information System (INIS)

    Yamamoto, Seiichi; Komori, Masataka; Koyama, Shuji; Morishita, Yuki; Sekihara, Eri; Akagi, Takashi; Yamashita, Tomohiro; Toshito, Toshiyuki

    2016-01-01

    Purpose: The authors previously reported successful luminescence imaging of water during proton irradiation and its application to range estimation. However, since the feasibility of this approach for carbon-ion irradiation remained unclear, the authors conducted luminescence imaging during carbon-ion irradiation and estimated the ranges. Methods: The authors placed a pure-water phantom on the patient couch of a carbon-ion therapy system and measured the luminescence images with a high-sensitivity, cooled charge-coupled device camera during carbon-ion irradiation. The authors also carried out imaging of three types of phantoms (tap-water, an acrylic block, and a plastic scintillator) and compared their intensities and distributions with those of a phantom containing pure-water. Results: The luminescence images of pure-water phantoms during carbon-ion irradiation showed clear Bragg peaks, and the measured carbon-ion ranges from the images were almost the same as those obtained by simulation. The image of the tap-water phantom showed almost the same distribution as that of the pure-water phantom. The acrylic block phantom’s luminescence image produced seven times higher luminescence and had a 13% shorter range than that of the water phantoms; the range with the acrylic phantom generally matched the calculated value. The plastic scintillator showed ∼15 000 times higher light than that of water. Conclusions: Luminescence imaging during carbon-ion irradiation of water is not only possible but also a promising method for range estimation in carbon-ion therapy.

  3. Susceptible genes and molecular pathways related to heavy ion irradiation in oral squamous cell carcinoma cells

    International Nuclear Information System (INIS)

    Fushimi, Kazuaki; Uzawa, Katsuhiro; Ishigami, Takashi; Yamamoto, Nobuharu; Kawata, Tetsuya; Shibahara, Takahiko; Ito, Hisao; Mizoe, Jun-etsu; Tsujii, Hirohiko; Tanzawa, Hideki

    2008-01-01

    Background and purpose: Heavy ion beams are high linear energy transfer (LET) radiation characterized by a higher relative biologic effectiveness than low LET radiation. The aim of the current study was to determine the difference of gene expression between heavy ion beams and X-rays in oral squamous cell carcinoma (OSCC)-derived cells. Materials and methods: The OSCC cells were irradiated with accelerated carbon or neon ion irradiation or X-rays using three different doses. We sought to identify genes the expression of which is affected by carbon and neon ion irradiation using Affymetrix GeneChip analysis. The identified genes were analyzed using the Ingenuity Pathway Analysis Tool to investigate the functional network and gene ontology. Changes in mRNA expression in the genes were assessed by real-time quantitative reverse transcriptase-polymerase chain reaction (qRT-PCR). Results: The microarray analysis identified 84 genes that were modulated by carbon and neon ion irradiation at all doses in OSCC cells. Among the genes, three genes (TGFBR2, SMURF2, and BMP7) and two genes (CCND1 and E2F3), respectively, were found to be involved in the transforming growth factor β-signaling pathway and cell cycle:G1/S checkpoint regulation pathway. The qRT-PCR data from the five genes after heavy ion irradiation were consistent with the microarray data (P < 0.01). Conclusion: Our findings should serve as a basis for global characterization of radiation-regulated genes and pathways in heavy ion-irradiated OSCC

  4. Enhancement of SPHK1 in vitro by carbon ion irradiation in oral squamous cell carcinoma

    International Nuclear Information System (INIS)

    Higo, Morihiro; Uzawa, Katsuhiro; Kawata, Tetsuya; Kato, Yoshikuni; Kouzu, Yukinao; Yamamoto, Nobuharu; Shibahara, Takahiko; Mizoe, Jun-etsu; Ito, Hisao; Tsujii, Hirohiko; Tanzawa, Hideki

    2006-01-01

    Purpose The purpose of this study was to assess the gene expression changes in oral squamous cell carcinoma (OSCC) cells after carbon ion irradiation. Methods and Materials Three OSCC cell lines (HSC2, Ca9-22, and HSC3) were irradiated with accelerated carbon ion beams or X-rays using three different doses. The cellular sensitivities were determined by clonogenic survival assay. To identify genes the expression of which is influenced by carbon ion irradiation in a dose-dependent manner, we performed Affymetrix GeneChip analysis with HG-U133 plus 2.0 arrays containing 54,675 probe sets. The identified genes were analyzed using the Ingenuity Pathway Analysis Tool to investigate the functional network and gene ontology. Changes in mRNA expression in the genes were assessed by real-time reverse transcriptase-polymerase chain reaction. Results We identified 98 genes with expression levels that were altered significantly at least twofold in each of the three carbon-irradiated OSCC cell lines at all dose points compared with nonirradiated control cells. Among these, SPHK1, the expression of which was significantly upregulated by carbon ion irradiation, was modulated little by X-rays. The function of SPHK1 related to cellular growth and proliferation had the highest p value (p = 9.25e-7 to 2.19e-2). Real-time reverse transcriptase-polymerase chain reaction analysis showed significantly elevated SPHK1 expression levels after carbon ion irradiation (p < 0.05), consistent with microarray data. Clonogenic survival assay indicated that carbon ion irradiation could induce cell death in Ca9-22 cells more effectively than X-rays. Conclusions Our findings suggest that SPHK1 helps to elucidate the molecular mechanisms and processes underlying the biologic response to carbon ion beams in OSCC

  5. Depth profiling by Raman spectroscopy of high-energy ion irradiated silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Xu; Zhang, Yanwen; Liu, Shiyi; Zhao, Ziqiang, E-mail: zqzhao@pku.edu.cn

    2014-01-15

    Single crystals of 6H–SiC were irradiated at room temperature with 20 MeV carbon ions at fluences of 1.5 × 10{sup 15} and 6.0 × 10{sup 15} cm{sup −2}. Raman measurements were performed to study irradiation induced damage and the in-depth damage profile of SiC. A clear change of damage from the surface down to the stopping region of carbon ions as simulated by SRIM is exhibited. The affected area as detected by Raman is in good agreement with SRIM predictions while a little shallower dpa profile is observed. The partial disorder defined in the present work as a function of depth is demonstrated. A shift of the position of the TO peak towards lower wavenumbers with in-depth damage and then to higher wavenumbers beyond the most damaged region indicates that tensile strain due to defects has a backward V-curve distribution. The damaged layer is subjected to a compressive in-plane stress associated with the out-of-plane strain and the magnitude of this stress also has a backward V-curve depth profile. The evolution of line width of the TO peak with depth clearly shows the density of defects reaches the higher level at the most damaged region. The Raman spectroscopy scanning technique is proved to be a powerful tool for profiling of crystal damage induced by high-energy ion implantation.

  6. Dewetting of nickel oxide-films on silicon under swift heavy ion irradiation

    International Nuclear Information System (INIS)

    Bolse, Thunu; Elsanousi, Ammar; Paulus, Hartmut; Bolse, Wolfgang

    2006-01-01

    Dewetting, occurring when a thin film on a non-wettable substrate turns into its liquid state, has gained strong interest during the last decade, since it results in nano-scale, large-area covering pattern formation. Recently we found that swift heavy ion (SHI) irradiation of thin NiO films on Si substrates at 80 K results in similar dewetting pattern, although in this case the coating has never reached its melting point. Careful inspection of the SEM images clearly revealed that the same nucleation mechanisms as observed for molten polymer films on Si (heterogeneous and homogeneous nucleation) were active. AFM shows that the circular holes formed in the early stages of the dewetting process exhibit a high and asymmetric rim-structure. RBS analysis was used to measure the coverage of the surface by the oxide films and revealed that the holes grow at constant velocity. This, and the shape of the rims, indicate that the material removed from the substrate surface piles up by plastic deformation, which points at a balance of the capillary driving forces and the hindered material dissipation

  7. Depth distribution of carrier lifetime in 65 MeV oxygen ion irradiated silicon wafers

    Energy Technology Data Exchange (ETDEWEB)

    Shinde, N.S. [Ecotopia Science Institute, Division of Energy Science, Nagoya University, Nagoya (Japan); Dahiwale, S.S. [Department of Physics, University of Pune, Pune 411 007 (India); Kanjilal, D. [Nuclear Science Centre, New Delhi (India); Bhoraskar, V.N. [Department of Physics, University of Pune, Pune 411 007 (India); Dhole, S.D. [Department of Physics, University of Pune, Pune 411 007 (India)]. E-mail: sanjay@physics.unipune.ernet.in

    2006-03-15

    CZ-grown, n-doped crystalline Si(1 1 1) of resistivity 60 {omega} cm and 140 {omega} cm were irradiated with 65 MeV energy oxygen ions, in the fluence range of 2 x 10{sup 1}-10{sup 14} ions/cm{sup 2}. The depth and spatial profile of excess minority carrier recombination time {tau} (lifetime) was measured using photoconductive decay (PCD) method. Lifetime measurements were carried out before the stopping range of impinging ions. Results show a monotonous decrease in lifetime with fluence, which is attributed to defect creation mechanism by electronic energy loss based on the thermal spike model. Also, surface modification is expected with a small loss in crystalline quality. This surface is considered to be a multi-crystalline surface with large grain boundaries that act as trapping sites for excess holes in n-Si(1 1 1). Annealing of the irradiated samples showed a near complete recovery at 750 deg. C for a period of 1 h.

  8. Modification of structure and optical band-gap of nc-Si:H films with ion irradiation

    International Nuclear Information System (INIS)

    Zhu Yabin; Wang Zhiguang; Sun Jianrong; Yao Cunfeng; Shen Tielong; Li Bingsheng; Wei Kongfang; Pang Lilong; Sheng Yanbin; Cui Minghuan; Li Yuanfei; Wang Ji; Zhu Huiping

    2012-01-01

    Hydrogenated nano-crystalline silicon (nc-Si:H) films fabricated by using hot-wire chemical vapor deposition are irradiated at room temperature with 6.0 MeV Xe-ions. The irradiation fluences are 1.0 × 10 13 , 5.0 × 10 13 and 1.0 × 10 14 Xe-ions/cm 2 . The structure and optical band-gap of the irradiated films varying with ion fluence are investigated by means of X-ray diffraction, Raman and UV–Vis–NIR spectroscopes, as well as transmission electron microscopy. It is found that the crystallite size, the crystalline fraction and the optical band-gap decrease continuously with increasing the ion fluence. The crystalline fraction of the films irradiated to the fluences from 0 to 1.0 × 10 14 Xe-ions/cm 2 decreases from about 65.7% to 2.9% and the optical band-gap decreases from about 2.1 to 1.6 eV. Possible origins of the modification of the nc-Si:H films under 6.0 MeV Xe-ions irradiation are briefly discussed.

  9. Intense low energy positron beams

    International Nuclear Information System (INIS)

    Lynn, K.G.; Jacobsen, F.M.

    1993-01-01

    Intense positron beams are under development or being considered at several laboratories. Already today a few accelerator based high intensity, low brightness e + beams exist producing of the order of 10 8 - 10 9 e + /sec. Several laboratories are aiming at high intensity, high brightness e + beams with intensities greater than 10 9 e + /sec and current densities of the order of 10 13 - 10 14 e + sec - 1 cm -2 . Intense e + beams can be realized in two ways (or in a combination thereof) either through a development of more efficient B + moderators or by increasing the available activity of B + particles. In this review we shall mainly concentrate on the latter approach. In atomic physics the main trust for these developments is to be able to measure differential and high energy cross-sections in e + collisions with atoms and molecules. Within solid state physics high intensity, high brightness e + beams are in demand in areas such as the re-emission e + microscope, two dimensional angular correlation of annihilation radiation, low energy e + diffraction and other fields. Intense e + beams are also important for the development of positronium beams, as well as exotic experiments such as Bose condensation and Ps liquid studies

  10. Low energy (soft) x rays

    International Nuclear Information System (INIS)

    Hoshi, Masaharu; Antoku, Shigetoshi; Russell, W.J.; Miller, R.C.; Nakamura, Nori; Mizuno, Masayoshi; Nishio, Shoji.

    1987-05-01

    Dosimetry of low-energy (soft) X rays produced by the SOFTEX Model CMBW-2 was performed using Nuclear Associates Type 30 - 330 PTW, Exradin Type A2, and Shonka-Wyckoff ionization chambers with a Keithley Model 602 electrometer. Thermoluminescent (BeO chip) dosimeters were used with a Harshaw Detector 2000-A and Picoammeter-B readout system. Beam quality measurements were made using aluminum absorbers; exposure rates were assessed by the current of the X-ray tube and by exposure times. Dose distributions were established, and the average factors for non-uniformity were calculated. The means of obtaining accurate absorbed and exposed doses using these methods are discussed. Survival of V79 cells was assessed by irradiating them with soft X rays, 200 kVp X rays, and 60 Co gamma rays. The relative biological effectiveness (RBE) values for soft X rays with 0, 0.2, 0.7 mm added thicknesses of aluminum were 1.6, which were compared to 60 Co. The RBE of 200 kVp X rays relative to 60 Co was 1.3. Results of this study are available for reference in future RERF studies of cell survival. (author)

  11. Low energy physics from superstrings

    International Nuclear Information System (INIS)

    Segre, G.C.

    1987-01-01

    The developments of the past year have resulted in growing interest in the theory of superstrings, a subject which is on the one hand extraordinarily exciting in the promise it holds for solutions of many of the outstanding problems of particle physics and on the other hand rather forbidding in the amount of new knowledge which needs to be acquired by the average theorist to understand the papers that are now being published on the recent developments. In a sense the term low energy superstrings is misleading: the work of the past fifteen years in string theory, culminating in last summer's stunning developments by Green and Schwartz have led theorists to believe a finite, consistent superstring theory can be formulated. An enormous amount of work is going on in this subject, the premise that an effective field theory in ten space-time dimensions can be obtained from the superstring theory is the start of the lectures. The lectures will cover this later stage, namely how does one proceed from the effective ten dimensional theory to an effective four dimensional theory, describing the world as we see it. 87 references, 2 tables

  12. Defect induced modification of structural, topographical and magnetic properties of zinc ferrite thin films by swift heavy ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Raghavan, Lisha [Department of Physics, Cochin University of Science and Technology, Cochin 682022 (India); Inter University Accelerator Center, New Delhi 110067 (India); Joy, P.A. [National Chemical Laboratory, Pune (India); Vijaykumar, B. Varma; Ramanujan, R.V. [School of Materials Science and Engineering, Nanyang Technological University (Singapore); Anantharaman, M.R., E-mail: mraiyer@gmail.com [Department of Physics, Cochin University of Science and Technology, Cochin 682022 (India)

    2017-04-01

    Highlights: • Zinc ferrite films exhibited room temperature ferrimagnetic property. • On ion irradiation amorphisation of films were observed. • The surface morphology undergoes changes with ion irradiation. • The saturation magnetisation decreases on ion irradiation. - Abstract: Swift heavy ion irradiation provides unique ways to modify physical and chemical properties of materials. In ferrites, the magnetic properties can change significantly as a result of swift heavy ion irradiation. Zinc ferrite is an antiferromagnet with a Neel temperature of 10 K and exhibits anomalous magnetic properties in the nano regime. Ion irradiation can cause amorphisation of zinc ferrite thin films; thus the role of crystallinity on magnetic properties can be examined. The influence of surface topography in these thin films can also be studied. Zinc ferrite thin films, of thickness 320 nm, prepared by RF sputtering were irradiated with 100 MeV Ag ions. Structural characterization showed amorphisation and subsequent reduction in particle size. The change in magnetic properties due to irradiation was correlated with structural and topographical effects of ion irradiation. A rough estimation of ion track radius is done from the magnetic studies.

  13. Strain-dependent Damage in Mouse Lung After Carbon Ion Irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Moritake, Takashi [Advanced Radiation Biology Research Program, Research Center for Charged Particle Therapy, National Institute of Radiological Sciences, Chiba (Japan); Proton Medical Research Center, University of Tsukuba, Tsukuba (Japan); Fujita, Hidetoshi; Yanagisawa, Mitsuru; Nakawatari, Miyako; Imadome, Kaori; Nakamura, Etsuko; Iwakawa, Mayumi [Advanced Radiation Biology Research Program, Research Center for Charged Particle Therapy, National Institute of Radiological Sciences, Chiba (Japan); Imai, Takashi, E-mail: imait@nirs.go.jp [Advanced Radiation Biology Research Program, Research Center for Charged Particle Therapy, National Institute of Radiological Sciences, Chiba (Japan)

    2012-09-01

    Purpose: To examine whether inherent factors produce differences in lung morbidity in response to carbon ion (C-ion) irradiation, and to identify the molecules that have a key role in strain-dependent adverse effects in the lung. Methods and Materials: Three strains of female mice (C3H/He Slc, C57BL/6J Jms Slc, and A/J Jms Slc) were locally irradiated in the thorax with either C-ion beams (290 MeV/n, in 6 cm spread-out Bragg peak) or with {sup 137}Cs {gamma}-rays as a reference beam. We performed survival assays and histologic examination of the lung with hematoxylin-eosin and Masson's trichrome staining. In addition, we performed immunohistochemical staining for hyaluronic acid (HA), CD44, and Mac3 and assayed for gene expression. Results: The survival data in mice showed a between-strain variance after C-ion irradiation with 10 Gy. The median survival time of C3H/He was significantly shortened after C-ion irradiation at the higher dose of 12.5 Gy. Histologic examination revealed early-phase hemorrhagic pneumonitis in C3H/He and late-phase focal fibrotic lesions in C57BL/6J after C-ion irradiation with 10 Gy. Pleural effusion was apparent in C57BL/6J and A/J mice, 168 days after C-ion irradiation with 10 Gy. Microarray analysis of irradiated lung tissue in the three mouse strains identified differential expression changes in growth differentiation factor 15 (Gdf15), which regulates macrophage function, and hyaluronan synthase 1 (Has1), which plays a role in HA metabolism. Immunohistochemistry showed that the number of CD44-positive cells, a surrogate marker for HA accumulation, and Mac3-positive cells, a marker for macrophage infiltration in irradiated lung, varied significantly among the three mouse strains during the early phase. Conclusions: This study demonstrated a strain-dependent differential response in mice to C-ion thoracic irradiation. Our findings identified candidate molecules that could be implicated in the between-strain variance to early

  14. Towards Low Energy Atrial Defibrillation

    Directory of Open Access Journals (Sweden)

    Philip Walsh

    2015-09-01

    . Efficient transcutaneous power transfer and sensing of ICI during cardioversion are evidenced as key to the advancement of low-energy atrial defibrillation.

  15. Characterization of ion-irradiation-induced nanodot structures on InP surfaces by atom probe tomography.

    Science.gov (United States)

    Gnaser, Hubert; Radny, Tobias

    2015-12-01

    Surfaces of InP were bombarded by 1.9 keV Ar(+) ions under normal incidence. The total accumulated ion fluence the samples were exposed to was varied from 1 × 10(17) cm(-2) to 3 × 10(18)cm(-2) and ion flux densities f of (0.4-2) × 10(14) cm(-2) s(-1) were used. Nanodot structures were found to evolve on the surface from these ion irradiations, their dimensions however, depend on the specific bombardment conditions. The resulting surface morphology was examined by atomic force microscopy (AFM). As a function of ion fluence, the mean radius, height, and spacing of the dots can be fitted by power-law dependences. In order to determine possible local compositional changes in these nanostructures induced by ion impact, selected samples were prepared for atom probe tomography (APT). The results indicate that by APT the composition of individual InP nanodots evolving under ion bombardment could be examined with atomic spatial resolution. At the InP surface, the values of the In/P concentration ratio are distinctly higher over a distance of ~1 nm and amount to 1.3-1.8. However, several aspects critical for the analyses were identified: (i) because of the small dimensions of these nanostructures a successful tip preparation proved very challenging. (ii) The elemental compositions obtained from APT were found to be influenced pronouncedly by the laser pulse energy; typically, low energies result in the correct stoichiometry whereas high ones lead to an inhomogeneous evaporation from the tips and deviations from the nominal composition. (iii) Depending again on the laser energy, a prolific emission of Pn cluster ions was observed, with n ≤ 11. Copyright © 2015. Published by Elsevier B.V.

  16. Role of carbon impurities on the surface morphology evolution of tungsten under high dose helium ion irradiation

    International Nuclear Information System (INIS)

    Al-Ajlony, A.; Tripathi, J.K.; Hassanein, A.

    2015-01-01

    The effect of carbon impurities on the surface evolution (e.g., fuzz formation) of tungsten (W) surface during 300 eV He ions irradiation was studied. Several tungsten samples were irradiated by He ion beam with a various carbon ions percentage. The presence of minute carbon contamination within the He ion beam was found to be effective in preventing the fuzz formation. At higher carbon concentration, the W surface was found to be fully covered with a thick graphitic layer on the top of tungsten carbide (WC) layer that cover the sample surface. Lowering the ion beam carbon percentage was effective in a significant reduction in the thickness of the surface graphite layer. Under these conditions the W surface was also found to be immune for the fuzz formation. The effect of W fuzz prevention by the WC formation on the sample surface was more noticeable when the He ion beam had much lower carbon (C) ions content (0.01% C). In this case, the fuzz formation was prevented on the vast majority of the W sample surface, while W fuzz was found in limited and isolated areas. The W surface also shows good resistance to morphology evolution when bombarded by high flux of pure H ions at 900 °C. - Highlights: • Reporting formation of W nanostructure (fuzz) due to low energy He ion beam irradiation. • The effect of adding various percentage of carbon impurity to the He ion beam on the trend of W fuzz formation was studied. • Mitigation of W fuzz formation due to addition of small percentage of carbon to the He ion beam is reported. • The formation of long W nanowires due to He ion beam irradiation mixed with 0.01% carbon ions is reported.

  17. A study of defect cluster formation in vanadium by heavy ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Sekimura, Naoto; Shirao, Yasuyuki; Morishita, Kazunori [Tokyo Univ. (Japan)

    1996-10-01

    Formation of defect clusters in thin foils of vanadium was investigated by heavy ion irradiation. In the very thin region of the specimens less than 20 nm, vacancy clusters were formed under gold ion irradiation, while very few clusters were detected in the specimens irradiated with 200 and 400 keV self-ions up to 1 x 10{sup 16} ions/m{sup 2}. The density of vacancy clusters were found to be strongly dependent on ion energy. Only above the critical value of kinetic energy transfer density in vanadium, vacancy clusters are considered to be formed in the cascade damage from which interstitials can escape to the specimen surface in the very thin region. (author)

  18. Simulation of alpha decay of actinides in iron phosphate glasses by ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Dube, Charu L., E-mail: dubecharu@gmail.com; Stennett, Martin C.; Gandy, Amy S.; Hyatt, Neil C.

    2016-03-15

    Highlights: • Alpha decay of actinides in iron phosphate glasses is simulated by employing ion irradiation technique. • FTIR and Raman spectroscopic measurements confirm modification of glass network. • The depolymerisation of glass network after irradiation is attributed to synergetic effect of nuclear and electronic losses. - Abstract: A surrogate approach of ion beam irradiation is employed to simulate alpha decay of actinides in iron phosphate nuclear waste glasses. Bismuth and helium ions of different energies have been selected for simulating glass matrix modification owing to radiolysis and ballistic damage due to recoil atoms. Structural modification and change in coordination number of network former were probed by employing Reflectance Fourier-Transform Infrared (FT-IR), and Raman spectroscopies as a consequence of ion irradiation. Depolymerisation is observed in glass sample irradiated at intermediate energy of 2 MeV. Helium blisters of micron size are seen in glass sample irradiated at low helium ion energy of 30 keV.

  19. Effects of C3+ ion irradiation on structural, electrical and magnetic properties of Ni nanotubes

    Science.gov (United States)

    Shlimas, D. I.; Kozlovskiy, A. L.; Zdorovets, M. V.; Kadyrzhanov, K. K.; Uglov, V. V.; Kenzhina, I. E.; Shumskaya, E. E.; Kaniukov, E. Y.

    2018-03-01

    Ion irradiation is an attractive method for obtaining nanostructures that can be used under extreme conditions. Also, it is possible to control the technological process that allows obtaining nanomaterials with new properties at ion irradiation. In this paper, we study the effect of irradiation with 28 MeV C3+ ions and fluences up to 5 × 1011 cm-2 on the structure and properties of template-synthesized nickel nanotubes with a length of 12 μm, with diameters of 400 nm, and a wall thickness of 100 nm. It is demonstrated that the main factor influencing the degradation of nanostructures under irradiation in PET template is the processes of mixing the material of nanostructures with the surrounding polymer. The influence of irradiation with various fluences on the crystal structure, electrical and magnetic properties of nickel nanotubes is studied.

  20. Observation of transient lattice vacancies produced during high-energy ion irradiation of Ni foils

    International Nuclear Information System (INIS)

    Tsuchida, Hidetsugu; Iwai, Takeo; Awano, Misa; Kishida, Mutsumi; Katayama, Ichiro; Jeong, Sun-Chang; Ogawa, Hidemi; Sakamoto, Naoki; Komatsu, Masao; Itoh, Akio

    2007-01-01

    Real-time positron annihilation spectroscopy has been applied for the first time for the investigation of lattice vacancies produced during ion irradiation. Measurements were performed for thin nickel foils irradiated with 2.5 MeV C ions. Doppler broadenings of positron annihilation γ-rays were measured alternately during beam-on and beam-off conditions. It was found that the Doppler broadening line-shape parameter measured during irradiation is larger than those obtained before and after irradiation. This evidently implies that transient or non-survivable vacancy defects are produced during ion irradiation. On the other hand, no such significant change in the line-shape parameter was observed for other face-centred-cubic metal forms of aluminium

  1. Formation of tungsten oxide nanowires by ion irradiation and vacuum annealing

    Science.gov (United States)

    Zheng, Xu-Dong; Ren, Feng; Wu, Heng-Yi; Qin, Wen-Jing; Jiang, Chang-Zhong

    2018-04-01

    Here we reported the fabrication of tungsten oxide (WO3-x ) nanowires by Ar+ ion irradiation of WO3 thin films followed by annealing in vacuum. The nanowire length increases with increasing irradiation fluence and with decreasing ion energy. We propose that the stress-driven diffusion of the irradiation-induced W interstitial atoms is responsible for the formation of the nanowires. Comparing to the pristine film, the fabricated nanowire film shows a 106-fold enhancement in electrical conductivity, resulting from the high-density irradiation-induced vacancies on the oxygen sublattice. The nanostructure exhibits largely enhanced surface-enhanced Raman scattering effect due to the oxygen vacancy. Thus, ion irradiation provides a powerful approach for fabricating and tailoring the surface nanostructures of semiconductors.

  2. Effects of ion irradiation on the residual stresses in Cr thin films

    International Nuclear Information System (INIS)

    Misra, A.; Fayeulle, S.; Kung, H.; Mitchell, T.E.; Nastasi, M.

    1998-01-01

    Cr films sputtered onto {100}thinspSi substrates at room temperature were found to be under residual tension, as revealed by wafer curvature measurements. A 150 nm thick Cr film was bombarded with 300 keV Ar ions after deposition. The intrinsic residual tensile stress increased slightly and then decreased with further increase in the ion dose. For ion doses >1x10 15 thinspions/cm 2 , the stress in the film became compressive and increased with increasing dose. Transmission electron microscopy revealed that the grain boundaries in as-deposited Cr have columnar porosity. A Cr film, ion irradiated to a dose of 5x10 15 thinspions/cm 2 , showed no grain boundary porosity. The changes in the residual stress during ion irradiation are explained by considering Ar incorporation in the film and the manner in which irradiation may change the interatomic distances and forces. copyright 1998 American Institute of Physics

  3. Swift heavy ion irradiation effects in Pt/C and Ni/C multilayers

    Science.gov (United States)

    Gupta, Ajay; Pandita, Suneel; Avasthi, D. K.; Lodha, G. S.; Nandedkar, R. V.

    1998-12-01

    Irradiation effects of 100 MeV Ag ion irradiation on Ni/C and Pt/C multilayers have been studied using X-ray reflectivity measurements. Modifications are observed in both the multilayers at (dE/dx)e values much below the threshold values for Ni and Pt. This effect is attributed to the discontinuous nature of the metal layers. In both the multilayers interfacial roughness increases with irradiation dose. While Ni/C multilayers exhibit large ion-beam induced intermixing, no observable intermixing is observed in the case of Pt/C multilayer. This difference in the behavior of the two systems suggests a significant role for chemically guided defect motion in the mixing process associated with swift heavy ion irradiation.

  4. Development of a compact and user-friendly ion irradiation system controlled remotely through the internet

    International Nuclear Information System (INIS)

    Ishikawa, Ippei; Kada, Wataru; Sato, Fuminobu; Kato, Yushi; Iida, Toshiyuki; Tanaka, Teruya; Yamamoto, Junji

    2007-01-01

    A compact and user-friendly ion irradiation system controlled remotely through the Internet was developed for the execution of collaboration experiments together with researchers at remote sites. Several hardware instruments and software programs were constructed and provided for the remote control of the system and for its connection to the Internet. Surface modification and analysis experiments with this system were remotely performed through the Internet. It was confirmed from the experiments that the present ion irradiation system was precisely controlled through the Internet and could be easily and safely used for the surface modification and analysis, that the normal communication speed of around 10 Mbps for the Internet was fast enough for the execution of such typical remote-controlled experiments, and also that an access to the system by a mobile phone was convenient and useful enough to check the condition of the system and experimental data. (author)

  5. Effects of ion irradiation on the mechanical properties of several polymers

    International Nuclear Information System (INIS)

    Sasuga, Tsuneo; Kawanishi, Shunichi; Nishi, Masanobu; Seguchi, Tadao

    1991-01-01

    The effects of high-energy ion irradiation on the tensile properties of polymers were studied under conditions in which ions should pass completely through the specimen and the results were compared with 2 MeV electron irradiation effects. Experiments were carried out on polymers having various constituents and molecular structures, i.e. eight aliphatic polymers and four aromatic polymers. In the aliphatic polymers studied there was scarcely any difference in the dose dependence of the tensile strength and ultimate elongation between proton and electron irradiation. In the aromatic polymers, however, the decrements in the tensile strength and ultimate elongation vs proton dose were less than those for electron irradiation. In heavy-ion irradiation, the radiation damage of PE (an aliphatic polymer) decreased with increase of LET, but no obvious LET effects were observed in PES (an aromatic polymer). (author)

  6. Comparison of electron and ion irradiation effects on order-disorder transition in Ni4Mo

    International Nuclear Information System (INIS)

    Banerjee, S.; Sundararaman, M.

    1996-01-01

    The effects of radiation damage in metals and alloys caused by electron and heavy ion beams are quite distinct from the consideration of cascade formation. Microstructural changes occurring with progressive dose of irradiation under cascade forming heavy ion irradiation and under electron irradiation have been systematically studied in Ni 4 Mo in the temperature range of 300 to 1050 K. The ordering transformation in this alloy can be used in understanding the fundamental processes of radiation damage. Conversely, radiation experiments provide an insight into the ordering mechanisms. The ordering in this alloy is governed by a competition between a second order and a first order ordering process. Steady state structures developed at different temperatures have been characterised by electron diffraction and imaging. The steady state diagrams are constructed and compared for both electron and ion irradiation. The essential difference between the nature of cascade forming and non-cascade forming irradiation on the order-disorder transformation has been discussed. (orig.)

  7. Correlation between intrinsic hardness and defect structures of ion irradiated Fe alloys

    International Nuclear Information System (INIS)

    Shin, C.; Jin, H. H.; Kwon, J.

    2008-01-01

    Evolution of micro structures and mechanical properties during an in-service irradiation is one of the key issues to be addressed in nuclear materials. Ion irradiation is an effective method to study these irradiation effects thanks to an ease in handling post-irradiated specimens. But the characteristics of an ion irradiation pose a certain difficulty in evaluating irradiation effects. For example, ion irradiated region extends only a few hundred nano-meters from the surface of a sample and the depth profile of an irradiation damage level is quite heterogeneous. Thus it requires special care to quantify the changes in properties after an ion irradiation. We measured changes in a hardness by using a nano-indentation combined with a continuous stiffness measurement (CSM technique. Although the SM technique allows for a continuous measurement of hardness along penetration depth of an indenter; it is difficult to obtain an intrinsic hardness of an irradiation hardened region because one is measuring hardness of a hard layer located on a soft matrix. Thus we modeled the nano-indentation test by using a finite element method. We can extract the intrinsic hardness and the yield stress of an irradiation hardened region by using a so-called inverse method. We investigated the irradiation effects on Fe-Cr binary alloy by using the methods mentioned above. TEM analysis revealed that an irradiation forms dislocation loops with Burgers vector of and 1/2 . These loops varied in size and density with the Cr content and dose level. We discuss in detail a correlation between the measured irradiation-induced changes in the surface hardness and an irradiation induced defect. (authors)

  8. Effect of ion irradiation on tensile ductility, strength and fictive temperature in metallic glass nanowires

    International Nuclear Information System (INIS)

    Magagnosc, D.J.; Kumar, G.; Schroers, J.; Felfer, P.; Cairney, J.M.; Gianola, D.S.

    2014-01-01

    Ion irradiation of thermoplastically molded Pt 57.5 Cu 14.3 Ni 5.7 P 22.5 metallic glass nanowires is used to study the relationship between glass structure and tensile behavior across a wide range of structural states. Starting with the as-molded state of the glass, ion fluence and irradiated volume fraction are systematically varied to rejuvenate the glass, and the resulting plastic behavior of the metallic glass nanowires probed by in situ mechanical testing in a scanning electron microscope. Whereas the as-molded nanowires exhibit high strength, brittle-like fracture and negligible inelastic deformation, ion-irradiated nanowires show tensile ductility and quasi-homogeneous plastic deformation. Signatures of changes to the glass structure owing to ion irradiation as obtained from electron diffraction are subtle, despite relatively large yield strength reductions of hundreds of megapascals relative to the as-molded condition. To reconcile changes in mechanical behavior with glass properties, we adapt previous models equating the released strain energy during shear banding to a transit through the glass transition temperature by incorporating the excess enthalpy associated with distinct structural states. Our model suggests that ion irradiation increases the fictive temperature of our glass by tens of degrees – the equivalent of many orders of magnitude change in cooling rate. We further show our analytical description of yield strength to quantitatively describe literature results showing a correlation between severe plastic deformation and hardness in a single glass system. Our results highlight not only the capacity for room temperature ductile plastic flow in nanoscaled metallic glasses, but also processing strategies capable of glass rejuvenation outside of the realm of traditional thermal treatments

  9. Modeling injected interstitial effects on void swelling in self-ion irradiation experiments

    Energy Technology Data Exchange (ETDEWEB)

    Short, M.P., E-mail: hereiam@mit.edu [Dept. of Nuclear Science and Engineering, Massachusetts Institute of Technology (United States); Gaston, D.R. [Idaho National Laboratory (United States); Jin, M. [Dept. of Nuclear Science and Engineering, Massachusetts Institute of Technology (United States); Shao, L. [Dept. of Nuclear Engineering, Texas A& M University (United States); Garner, F.A. [Radiation Effects Consulting, LLC (United States)

    2016-04-01

    Heavy ion irradiations at high dose rates are often used to simulate slow and expensive neutron irradiation experiments. However, many differences in the resultant modes of damage arise due to unique aspects of heavy ion irradiation. One such difference was recently shown in pure iron to manifest itself as a double peak in void swelling, with both peaks located away from the region of highest displacement damage. In other cases involving a variety of ferritic alloys there is often only a single peak in swelling vs. depth that is located very near the ion-incident surface. We show that these behaviors arise due to a combination of two separate effects: 1) suppression of void swelling due to injected interstitials, and 2) preferential sinking of interstitials to the ion-incident surface, which are very sensitive to the irradiation temperature and displacement rate. Care should therefore be used in collection and interpretation of data from the depth range outside the Bragg peak of ion irradiation experiments, as it is shown to be more complex than previously envisioned. - Highlights: • A model of the spatially dependent point defect kinetics equations with injected interstitials has been implemented. • The results predict a double peak in the void nucleation rate, helping to explain a recent experiment. • The double peak is predicted to be evident within a narrow (+/− 30 °C) temperature window for self-irradiation of pure iron. • The ballistic damage profile may not match the resultant void swelling profile from ion irradiation experiments.

  10. Development of heavy-ion irradiation technique for single-event in semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Nemoto, Norio; Akutsu, Takao; Matsuda, Sumio [National Space Development Agency of Japan, Tsukuba, Ibaraki (Japan). Tsukuba Space Center; Naitoh, Ichiro; Itoh, Hisayoshi; Agematsu, Takashi; Kamiya, Tomihiro; Nashiyama, Isamu

    1997-03-01

    Heavy-ion irradiation technique has been developed for the evaluation of single-event effects on semiconductor devices. For the uniform irradiation of high energy heavy ions to device samples, we have designed and installed a magnetic beam-scanning system in a JAERI cyclotron beam course. It was found that scanned area was approximately 4 x 2 centimeters and that the deviation of ion fluence from the average value was less than 7%. (author)

  11. Ion irradiation-induced precipitation of Cr23C6 at dislocation loops in austenitic steel

    International Nuclear Information System (INIS)

    Jin, Shuoxue; Guo, Liping; Luo, Fengfeng; Yao, Zhongwen; Ma, Shuli; Tang, Rui

    2013-01-01

    The irradiation-induced precipitates in argon ion-irradiated austenitic stainless steel at 550 °C were examined via transmission electron microscopy. The selected-area electron diffraction patterns of precipitates indicated unambiguously that the precipitates were Cr 23 C 6 carbides. It was observed directly for the first time that irradiation-induced Cr 23 C 6 precipitates formed at dislocation loops in austenitic stainless steel, and coarsened with increasing irradiation dose.

  12. Ion irradiation studies of the origins of pressurized water reactor fuel assembly deformation

    International Nuclear Information System (INIS)

    Hengstler-Eger, Rosmarie Martina

    2012-01-01

    The presented thesis studies ion irradiation damage in Zr-based alloys for pressurized water reactors to explain the origins of unexpectedly high fuel assembly growth in some plants. Transmission electron microscopy was used to investigate the effects of temperature, dose, hydrogen content of the alloy and tensile stress. A clear correlation between the stress orientation towards the crystal lattice and the density of the dislocation loops which are responsible for increased growth was found.

  13. Response of epitaxial YBa2Cu3O7 films on disorder after ion irradiation

    International Nuclear Information System (INIS)

    Saemann-Ischenko, G.; Hensel, B.; Roas, B.; Dengler, J.; Ritter, G.

    1990-01-01

    Measurements of superconducting properties, critical currents, magnetic relaxation, far infrared reflectivity (FIR) and conversion electron Mossbauer spectroscopy (CEMS) have been performed before and after ion irradiation with 25 MeV 16 O, 32 S and 173 MeV 129 Xe (in situ, ex situ or successive). The authors report essential results of this network of investigations performed for the first time on very high quality samples that were characterized to be nearly identical

  14. Production of nanodiamonds by high-energy ion irradiation of graphite at room temperature

    International Nuclear Information System (INIS)

    Daulton, T.L.; Kirk, M.A.; Lewis, R.S.; Rehn, L.E.

    2001-01-01

    It has previously been shown that graphite can be transformed into diamond by MeV electron and ion irradiation at temperatures above approximately 600 deg. C. However, there exists geological evidence suggesting that carbonaceous materials can be transformed to diamond by irradiation at substantially lower temperatures. For example, submicron-size diamond aggregates have been found in uranium-rich, Precambrian carbonaceous deposits that never experienced high temperature or pressure. To test if diamonds can be formed at lower irradiation temperatures, sheets of fine-grain polycrystalline graphite were bombarded at 20 deg. C with 350±50 MeV Kr ions to fluences of 6x10 12 cm -2 using the Argonne tandem linear accelerator system (ATLAS). Ion-irradiated (and unirradiated control) graphite specimens were then subjected to acid dissolution treatments to remove untransformed graphite and isolate diamonds that were produced; these acid residues were subsequently characterized by high-resolution and analytical electron microscopy. The acid residue of the ion-irradiated graphite was found to contain nanodiamonds, demonstrating that ion irradiation of graphite at ambient temperature can produce diamond. The diamond yield under our irradiation conditions is low, ∼0.01 diamonds/ion. An important observation that emerges from comparing the present result with previous observations of diamond formation during irradiation is that nanodiamonds form under a surprisingly wide range of irradiation conditions. This propensity may be related to the very small difference in the graphite and diamond free-energies coupled with surface-energy considerations that may alter the relative stability of diamond and graphite at nanometer sizes

  15. In-situ observation of damage evolution in TiC crystals during helium ion irradiation

    International Nuclear Information System (INIS)

    Hojou, K.; Otsu, H.; Furuno, S.; Izui, K.; Tsukamoto, T.

    1994-01-01

    In-situ observations were performed on bubble formation and growth in TiC during 20 keV helium ion irradiation over the wide range of irradiation temperatures from 12 to 1523 K. No amorphization occurred over this temperature range. The bubble densities and sizes were almost independent of irradiation temperatures from 12 to 1273 K. Remarkable growth and coalescence occurred during irradiation at high temperature above 1423 K and during annealing above 1373 K after irradiation. ((orig.))

  16. Investigations of electrical and optical properties of low energy ion irradiated α-Fe{sub 2}O{sub 3} (hematite) thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sulania, Indra; Kanjilal, D. [Inter University Accelerator Centre, P O Box-10502, Aruna Asaf Ali Marg, New Delhi-110067 (India); Kaswan, Jyoti; Attatappa, Vinesh [Department of physics, Amity University, Manesar-122 413, Haryana (India); Karn, Ranjeet Kumar [Jamshedpur Cooperative College, Circuit House Area, Jamshedpur-831001, Jharkhand (India); Agarwal, D. C. [Sant Longowal Institute of Engineering and Technology, Sangrur, Longowal-148106, Punjab (India)

    2016-05-23

    Thin films of α-Fe{sub 2}O{sub 3} of thickness ~100 nm were synthesized on Si (100) and glass substrates by thermal evaporation method. The as deposited films were annealed at 400°C in Oxygen environment for 2 hours to obtain the desired phase. The annealed films found to be polycrystalline in nature with an average crystallite size ~7 nm. The direct and indirect band gaps were found to be 2.2 and 1.5 eV respectively for annealed films using. I-V characteristics and Hall-effect measurement of annealed films showed n-type semi conducting behavior. Further, films were irradiated with nitrogen ions of energy 10 keV at an ion fluence of 1×10{sup 18} ions/cm{sup 2}. After irradiation, a decrease in both direct as well as indirect band gap was observed, from 2.2 to 2.1 eV and 1.5 to 1.3 eV respectively. I-V characteristic and Hall-Effect measurement confirmed change in conductivity of the films from n-type to p-type after irradiation, which can have possible applications in semi conducting device fabrications.

  17. In Situ TEM Multi-Beam Ion Irradiation as a Technique for Elucidating Synergistic Radiation Effects

    Energy Technology Data Exchange (ETDEWEB)

    Taylor, Caitlin; Bufford, Daniel; Muntifering, Brittany; Senor, David; Steckbeck, Mackenzie; Davis, Justin; Doyle, Barney; Buller, Daniel; Hattar, Khalid

    2017-09-29

    Materials designed for nuclear reactors undergo microstructural changes resulting from a combination of several environmental factors, including neutron irradiation damage, gas accumulation and elevated temperatures. Typical ion beam irradiation experiments designed for simulating a neutron irradiation environment involve irradiating the sample with a single ion beam and subsequent characterization of the resulting microstructure, often by transmission electron microscopy (TEM). This method does not allow for examination of microstructural effects due to simultaneous gas accumulation and displacement cascade damage, which occurs in a reactor. Sandia’s in situ ion irradiation TEM (I3TEM) offers the unique ability to observe microstructural changes due to irradiation damage caused by concurrent multi-beam ion irradiation in real time. This allows for time-dependent microstructure analysis. A plethora of additional in situ stages can be coupled with these experiments, e.g., for more accurately simulating defect kinetics at elevated reactor temperatures. This work outlines experiments showing synergistic effects in Au using in situ ion irradiation with various combinations of helium, deuterium and Au ions, as well as some initial work on materials utilized in tritium-producing burnable absorber rods (TPBARs): zirconium alloys and LiAlO2.

  18. In Situ TEM Multi-Beam Ion Irradiation as a Technique for Elucidating Synergistic Radiation Effects

    Directory of Open Access Journals (Sweden)

    Caitlin Anne Taylor

    2017-09-01

    Full Text Available Materials designed for nuclear reactors undergo microstructural changes resulting from a combination of several environmental factors, including neutron irradiation damage, gas accumulation and elevated temperatures. Typical ion beam irradiation experiments designed for simulating a neutron irradiation environment involve irradiating the sample with a single ion beam and subsequent characterization of the resulting microstructure, often by transmission electron microscopy (TEM. This method does not allow for examination of microstructural effects due to simultaneous gas accumulation and displacement cascade damage, which occurs in a reactor. Sandia’s in situ ion irradiation TEM (I3TEM offers the unique ability to observe microstructural changes due to irradiation damage caused by concurrent multi-beam ion irradiation in real time. This allows for time-dependent microstructure analysis. A plethora of additional in situ stages can be coupled with these experiments, e.g., for more accurately simulating defect kinetics at elevated reactor temperatures. This work outlines experiments showing synergistic effects in Au using in situ ion irradiation with various combinations of helium, deuterium and Au ions, as well as some initial work on materials utilized in tritium-producing burnable absorber rods (TPBARs: zirconium alloys and LiAlO2.

  19. Anisotropic dislocation loop nucleation in ion-irradiated MgAl2O4

    International Nuclear Information System (INIS)

    Zinkle, S.J.

    1991-01-01

    Polycrystalline disks of stoichiometric magnesium aluminate spinel (MgAl 2 O 4 ) were irradiated with 2 MeV Al + ions at 650 degrees C and subsequently analyzed in cross-section using transmission electron microscopy (TEM). Interstitial dislocation loops were observed on 110 and 11 habit planes. The population of loops on both sets of habit planes was strongly dependent on their orientation with respect to the ion beam direction. The density of loops with habit plane normals nearly perpendicular to the ion beam direction much higher than loops with habit plane normals nearly parallel to the ion beam direction. On the other hand, the loop size was nearly independent of habit plane orientation. This anisotropic loop nucleation does not occur in ion-irradiated metals such as copper. An additional anomaly associated with ion-irradiated spinel is that the loops on 111 planes were partially unfaulted with a Burgers vector of b = a/4 . Previous neutron irradiation studies have never reported unfaulted loops in stoichiometric spinel. Possible cause of the unusual response of spinel to ion irradiation are discussed. 12 refs., 14 figs

  20. Effect of swift heavy ion irradiation on ethylene–chlorotrifluoroethylene copolymer

    International Nuclear Information System (INIS)

    Singh, Lakhwant; Devgan, Kusum; Samra, Kawaljeet Singh

    2012-01-01

    The swift heavy irradiation induced changes taking place in ethylene–chlorotrifluoroethylene (E–CTFE) copolymer films were investigated in correlation with the applied doses. Samples were irradiated in vacuum at room temperature by lithium (50 MeV), carbon (85 MeV), nickel (120 MeV) and silver (120 MeV) ions with the fluence in the range of 1×10 11 –3×10 12 ions cm −2 . Structural and thermal properties of the irradiated as well as pristine E–CTFE films were studied using FTIR, UV–visible, TGA, DSC and XRD techniques. Swift heavy ion irradiation was found to induce changes in E–CTFE depending upon the applied doses. - Highlights: ► Effect of swift heavy ion irradiation on E–CTFE films has been studied. ► Different structural changes in the original structure of E–CTFE are observed after irradiation with different ions. ► Swift heavy ion irradiation has made E–CTFE more prone to thermal degradation.

  1. Structural modifications of swift heavy ion irradiated PEN probed by optical and thermal measurements

    International Nuclear Information System (INIS)

    Devgan, Kusum; Singh, Lakhwant; Samra, Kawaljeet Singh

    2013-01-01

    Highlights: • The present paper reports the effect of swift heavy ion irradiation on Polyethylene Naphthalate (PEN). • Swift heavy ion irradiation introduces structural modification and degradation of PEN at different doses. • Lower irradiation doses in PEN result in modification of structural properties and higher doses lead to complete degradation. • Strong correlation between structural, optical, and thermal properties. - Abstract: The effects of swift heavy ion irradiation on the structural characteristics of Polyethylene naphthalate (PEN) were studied. Samples were irradiated in vacuum at room temperature by lithium (50 MeV), carbon (85 MeV), nickel (120 MeV) and silver (120 MeV) ions with the fluence in the range of 1×10 11 –3×10 12 ions cm −2 . Ion induced changes were analyzed using X-ray diffraction (XRD), Fourier transform infra red (FT-IR), UV–visible spectroscopy, thermo-gravimetric analysis (TGA) and differential scanning calorimetry (DSC) techniques. Cross-linking was observed at lower doses resulting in modification of structural properties, however higher doses lead to the degradation of the investigated polymeric samples

  2. Enhanced electrical conductivity in Xe ion irradiated CNT based transparent conducting electrode on PET substrate

    Science.gov (United States)

    Surbhi; Sharma, Vikas; Singh, Satyavir; Garg, Priyanka; Asokan, K.; Sachdev, Kanupriya

    2018-02-01

    An investigation of MWCNT-based hybrid electrode films with improved electrical conductivity after Xe ion irradiation is reported. A multilayer hybrid structure of Ag-MWCNT layer embedded in between two ZnO layers was fabricated and evaluated, pre and post 100 keV Xe ion irradiation, for their performance as Transparent Conducting Electrode in terms of their optical and electrical properties. X-ray diffraction pattern exhibits highly c-axis oriented ZnO films with a small variation in lattice parameters with an increase in ion fluence. There is no significant change in the surface roughness of these films. Raman spectra were used to confirm the presence of CNT. The pristine multilayer films exhibit an average transmittance of ˜70% in the entire visible region and the transmittance increases with Xe ion fluence. A significant enhancement in electrical conductivity post-Xe ion irradiation viz from 1.14 × 10-7 Ω-1 cm-1 (pristine) to 7.04 × 103 Ω-1 cm-1 is seen which is due to the high connectivity in the top layer with Ag-CNT hybrid layer facilitating the smooth transfer of electrons.

  3. Engineering of electronic properties of single layer graphene by swift heavy ion irradiation

    Science.gov (United States)

    Kumar, Sunil; Kumar, Ashish; Tripathi, Ambuj; Tyagi, Chetna; Avasthi, D. K.

    2018-04-01

    In this work, swift heavy ion irradiation induced effects on the electrical properties of single layer graphene are reported. The modulation in minimum conductivity point in graphene with in-situ electrical measurement during ion irradiation was studied. It is found that the resistance of graphene layer decreases at lower fluences up to 3 × 1011 ions/cm2, which is accompanied by the five-fold increase in electron and hole mobilities. The ion irradiation induced increase in electron and hole mobilities at lower fluence up to 1 × 1011 ions/cm2 is verified by separate Hall measurements on another irradiated graphene sample at the selected fluence. In contrast to the adverse effects of irradiation on the electrical properties of materials, we have found improvement in electrical mobility after irradiation. The increment in mobility is explained by considering the defect annealing in graphene after irradiation at a lower fluence regime. The modification in carrier density after irradiation is also observed. Based on findings of the present work, we suggest ion beam irradiation as a useful tool for tuning of the electrical properties of graphene.

  4. Refractive index dispersion of swift heavy ion irradiated BFO thin films using Surface Plasmon Resonance technique

    International Nuclear Information System (INIS)

    Paliwal, Ayushi; Sharma, Savita; Tomar, Monika; Singh, Fouran; Gupta, Vinay

    2016-01-01

    Highlights: • Investigated the optical properties of BiFeO_3 (BFO) thin films after irradiation using SPR. • Otto configuration has been used to excite the surface plasmons using gold metal thin film. • BFO thin films were prepared by sol–gel spin coating technique. • Examined the refractive index dispersion of pristine and irradiated BFO thin film. - Abstract: Swift heavy ion irradiation (SHI) is an effective technique to induce defects for possible modifications in the material properties. There is growing interest in studying the optical properties of multiferroic BiFeO_3 (BFO) thin films for optoelectronic applications. In the present work, BFO thin films were prepared by sol–gel spin coating technique and were irradiated using the 15 UD Pelletron accelerator with 100 MeV Au"9"+ ions at a fluence of 1 × 10"1"2 ions cm"−"2. The as-grown films became rough and porous on ion irradiation. Surface Plasmon Resonance (SPR) technique has been identified as a highly sensitive and powerful technique for studying the optical properties of a dielectric material. Optical properties of BFO thin films, before and after irradiation were studied using SPR technique in Otto configuration. Refractive index is found to be decreasing from 2.27 to 2.14 on ion irradiation at a wavelength of 633 nm. Refractive index dispersion of BFO thin film (from 405 nm to 633 nm) before and after ion radiation was examined.

  5. Refractive index dispersion of swift heavy ion irradiated BFO thin films using Surface Plasmon Resonance technique

    Energy Technology Data Exchange (ETDEWEB)

    Paliwal, Ayushi [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Sharma, Savita [Department of Applied Physics, Delhi Technological University, Delhi (India); Tomar, Monika [Physics Department, Miranda House, University of Delhi, Delhi 110007 (India); Singh, Fouran [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110075 (India); Gupta, Vinay, E-mail: drguptavinay@gmail.com [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India)

    2016-07-15

    Highlights: • Investigated the optical properties of BiFeO{sub 3} (BFO) thin films after irradiation using SPR. • Otto configuration has been used to excite the surface plasmons using gold metal thin film. • BFO thin films were prepared by sol–gel spin coating technique. • Examined the refractive index dispersion of pristine and irradiated BFO thin film. - Abstract: Swift heavy ion irradiation (SHI) is an effective technique to induce defects for possible modifications in the material properties. There is growing interest in studying the optical properties of multiferroic BiFeO{sub 3} (BFO) thin films for optoelectronic applications. In the present work, BFO thin films were prepared by sol–gel spin coating technique and were irradiated using the 15 UD Pelletron accelerator with 100 MeV Au{sup 9+} ions at a fluence of 1 × 10{sup 12} ions cm{sup −2}. The as-grown films became rough and porous on ion irradiation. Surface Plasmon Resonance (SPR) technique has been identified as a highly sensitive and powerful technique for studying the optical properties of a dielectric material. Optical properties of BFO thin films, before and after irradiation were studied using SPR technique in Otto configuration. Refractive index is found to be decreasing from 2.27 to 2.14 on ion irradiation at a wavelength of 633 nm. Refractive index dispersion of BFO thin film (from 405 nm to 633 nm) before and after ion radiation was examined.

  6. Refractive index dispersion of swift heavy ion irradiated BFO thin films using Surface Plasmon Resonance technique

    Science.gov (United States)

    Paliwal, Ayushi; Sharma, Savita; Tomar, Monika; Singh, Fouran; Gupta, Vinay

    2016-07-01

    Swift heavy ion irradiation (SHI) is an effective technique to induce defects for possible modifications in the material properties. There is growing interest in studying the optical properties of multiferroic BiFeO3 (BFO) thin films for optoelectronic applications. In the present work, BFO thin films were prepared by sol-gel spin coating technique and were irradiated using the 15 UD Pelletron accelerator with 100 MeV Au9+ ions at a fluence of 1 × 1012 ions cm-2. The as-grown films became rough and porous on ion irradiation. Surface Plasmon Resonance (SPR) technique has been identified as a highly sensitive and powerful technique for studying the optical properties of a dielectric material. Optical properties of BFO thin films, before and after irradiation were studied using SPR technique in Otto configuration. Refractive index is found to be decreasing from 2.27 to 2.14 on ion irradiation at a wavelength of 633 nm. Refractive index dispersion of BFO thin film (from 405 nm to 633 nm) before and after ion radiation was examined.

  7. ESR investigation of L-α-alanine and sucrose radicals produced by heavy-ion irradiation

    International Nuclear Information System (INIS)

    Nakagawa, K.; Sato, Y.

    2005-01-01

    We investigated sucrose and L-α-alanine radicals produced by heavy (particle) ion irradiation with various LETs (linear energy transfer). The impact of the heavy ions on the samples produced stable free radicals, which were analyzed by ESR (electron spin resonance). Identical spectra were measured after one year. The obtained spectral patterns were the same as those for helium (He), carbon (C), and neon (Ne) ions irradiation. The absorbed dose dependences for the irradiated sucrose and alanine samples were examined. The ESR response has a linear relation with the absorbed dose. The ESR response at 60 Gy was slightly lower than a linear line for sucrose; however, the response showed good linearity for the alanine. In addition, the total spin concentration obtained by heavy-ion irradiation correlated logarithmically with the LET. Qualitative ESR analyse showed that the production of sucrose and alanine radicals depended on both different particle irradiation and the LET under the same dose. Thus, the present ESR results imply that sucrose together with L-α-alanine can be used to monitor LET as well as the number of ionizing particle for the production of stable free radicals. (author)

  8. Solute segregation and void formation in ion-irradiated vanadium-base alloys

    International Nuclear Information System (INIS)

    Loomis, B.A.; Smith, D.L.

    1985-01-01

    The radiation-induced segregation of solute atoms in the V-15Cr-5Ti alloys was determined after either single- dual-, or helium implantation followed by single-ion irradiation at 725 0 C to radiation damage levels ranging from 103 to 169 dpa. Also, the effect of irradiation temperature (600-750 0 C) on the microstructure in the V-15Cr-5Ti alloy was determined after single-ion irradiation to 200 and 300 dpa. The solute segregation results for the single- and dual-ion irradiated alloy showed that the simultaneous production of irradiation damage and deposition of helium resulted in enhanced depletion of Cr solute and enrichment of Ti, C and S solute in the near-surface layers of irradiated specimens. The observations of the irradiation-damaged microstructures in V-15Cr-5Ti specimens showed an absence of voids for irradiations of the alloy at 600-750 0 C to 200 dpa and at 725 0 C to 300 dpa. The principle effect on the microstructure of these irradiations was to induce the formation of a high density of disc-like precipitates in the vicinity of grain boundaries and intrinsic precipitates and on the dislocation structure. 8 references, 4 figures

  9. Surface damage on 6H–SiC by highly-charged Xeq+ ions irradiation

    International Nuclear Information System (INIS)

    Zhang, L.Q.; Zhang, C.H.; Han, L.H.; Xu, C.L.; Li, J.J.; Yang, Y.T.; Song, Y.; Gou, J.; Li, J.Y.; Ma, Y.Z.

    2014-01-01

    Surface damage on 6H–SiC irradiated by highly-charged Xe q+ (q = 18, 26) ions to different fluences in two geometries was studied by means of AFM, Raman scattering spectroscopy and FTIR spectrometry. The FTIR spectra analysis shows that for Xe 26+ ions irradiation at normal incidence, a deep reflection dip appears at about 930 cm −1 . Moreover, the reflectance on top of reststrahlen band decreases as the ion fluence increases, and the reflectance at tilted incidence is larger than that at normal incidence. The Raman scattering spectra reveal that for Xe 26+ ions at normal incidence, surface reconstruction occurs and amorphous stoichiometric SiC and Si–Si and C–C bonds are generated and original Si–C vibrational mode disappears. And the intensity of scattering peaks decreases with increasing dose. The AFM measurement shows that the surface swells after irradiation. With increasing ion fluence, the step height between the irradiated and the unirradiated region increases for Xe 18+ ions irradiation; while for Xe 26+ ions irradiation, the step height first increases and then decreases with increasing ion fluence. Moreover, the step height at normal incidence is higher than that at tilted incidence by the irradiation with Xe 18+ to the same ion fluence. A good agreement between the results from the three methods is found

  10. Effect of helium on swelling and microstructural evolution in ion-irradiated V-15Cr-5Ti alloy

    International Nuclear Information System (INIS)

    Loomis, B.A.; Kestel, B.J.; Gerber, S.B.; Ayrault, G.

    1986-03-01

    An investigation was made on the effects of implanted helium on the swelling and microstructural evolution that results from energetic single- and dual-ion irradiation of the V-15Cr-5Ti alloy. Single-ion irradiations were utilized for a simulated production of the irradiation damage that might be expected from neutron irradiation of the alloy in a reactor with a fast neutron energy spectrum (E > 0.1 MeV). Dual-ion irradiations were utilized for a simulated production of the simultaneous creation of helium atoms and irradiation damage in the alloy in the MFR environment. Experimental results are also presented on the radiation-induced segregation of the constituent atoms in the single- and dual-ion irradiated alloy

  11. The low energy tagger for the KLOE-2 experiment

    Energy Technology Data Exchange (ETDEWEB)

    Babusci, D. [Laboratori Nazionali di Frascati dell' INFN, Frascati (Italy); Bini, C. [Dipartimento di Fisica dell' universita Sapienza di Roma, p.le Aldo Moro 2, 00185 Roma (Italy); INFN sezione di Roma, Roma (Italy); Ciambrone, P.; Corradi, G. [Laboratori Nazionali di Frascati dell' INFN, Frascati (Italy); De Santis, A.; De Zorzi, G.; Di Domenico, A. [Dipartimento di Fisica dell' universita Sapienza di Roma, p.le Aldo Moro 2, 00185 Roma (Italy); INFN sezione di Roma, Roma (Italy); Fiore, S., E-mail: salvatore.fiore@roma1.infn.i [Dipartimento di Fisica dell' universita Sapienza di Roma, p.le Aldo Moro 2, 00185 Roma (Italy); INFN sezione di Roma, Roma (Italy); Gauzzi, P. [Dipartimento di Fisica dell' universita Sapienza di Roma, p.le Aldo Moro 2, 00185 Roma (Italy); INFN sezione di Roma, Roma (Italy); Iannarelli, M.; Miscetti, S.; Paglia, C.; Tagnani, D.; Turri, E. [Laboratori Nazionali di Frascati dell' INFN, Frascati (Italy)

    2010-05-21

    The KLOE experiment at the upgraded DAFNE e{sup +}e{sup -} collider in Frascati (KLOE-2) is going to start a new data taking at the beginning of 2010 with its detector upgraded with a tagging system for the identification of gamma-gamma interactions. The tagging stations for low-energy e{sup +}e{sup -} will consist in two calorimeters placed between the beam-pipe outer support structure and the inner wall of the KLOE drift chamber. This calorimeter will be made of LYSO crystals readout by Silicon Photomultipliers, to achieve an energy resolution better than 8% at 200 MeV.

  12. The low energy tagger for the KLOE-2 experiment

    International Nuclear Information System (INIS)

    Babusci, D.; Bini, C.; Ciambrone, P.; Corradi, G.; De Santis, A.; De Zorzi, G.; Di Domenico, A.; Fiore, S.; Gauzzi, P.; Iannarelli, M.; Miscetti, S.; Paglia, C.; Tagnani, D.; Turri, E.

    2010-01-01

    The KLOE experiment at the upgraded DAFNE e + e - collider in Frascati (KLOE-2) is going to start a new data taking at the beginning of 2010 with its detector upgraded with a tagging system for the identification of gamma-gamma interactions. The tagging stations for low-energy e + e - will consist in two calorimeters placed between the beam-pipe outer support structure and the inner wall of the KLOE drift chamber. This calorimeter will be made of LYSO crystals readout by Silicon Photomultipliers, to achieve an energy resolution better than 8% at 200 MeV.

  13. Controlled ion-beam transformation of silicon bipolar microwave power transistor's characteristics

    International Nuclear Information System (INIS)

    Solodukha, V.A.; Snitovskij, Yu.P.

    2015-01-01

    In this article, a method for changing the silicon bipolar microwave power transistor's characteristics in a direct and deliberate manner by modifying the chemical composition at the molybdenum - silicon boundary, the electro-physical properties of molybdenum - silicon contacts, and the electrophysical characteristics of transistor structure areas by the phosphorus ions irradiation of generated ohmic molybdenum - silicon contacts to the transistor emitters is proposed for the first time. The possibilities of this method are investigated and confirmed experimentally. (authors)

  14. Low-energy Electro-weak Reactions

    International Nuclear Information System (INIS)

    Gazit, Doron

    2012-01-01

    Chiral effective field theory (EFT) provides a systematic and controlled approach to low-energy nuclear physics. Here, we use chiral EFT to calculate low-energy weak Gamow-Teller transitions. We put special emphasis on the role of two-body (2b) weak currents within the nucleus and discuss their applications in predicting physical observables.

  15. Theorems of low energy in Compton scattering

    International Nuclear Information System (INIS)

    Chahine, J.

    1984-01-01

    We have obtained the low energy theorems in Compton scattering to third and fouth order in the frequency of the incident photon. Next we calculated the polarized cross section to third order and the unpolarized to fourth order in terms of partial amplitudes not covered by the low energy theorems, what will permit the experimental determination of these partial amplitudes. (Author) [pt

  16. The low energy detector of Simbol-X

    Science.gov (United States)

    Lechner, P.; Andricek, L.; Briel, U.; Hasinger, G.; Heinzinger, K.; Herrmann, S.; Huber, H.; Kendziorra, E.; Lauf, T.; Lutz, G.; Richter, R.; Santangelo, A.; Schaller, G.; Schnecke, M.; Schopper, F.; Segneri, G.; Strüder, L.; Treis, J.

    2008-07-01

    Simbol-X is a French-Italian-German hard energy X-ray mission with a projected launch in 2014. Being sensitive in the energy range from 500 eV to 80 keV it will cover the sensitivity gap beyond the energy interval of today's telescopes XMM-Newton and Chandra. Simbol-X will use an imaging telescope of nested Wolter-I mirrors. To provide a focal length of 20 m it will be the first mission of two independent mirror and detector spacecrafts in autonomous formation flight. The detector spacecraft's payload is composed of an imaging silicon low energy detector in front of a pixelated cadmium-telluride hard energy detector. Both have a sensitive area of 8 × 8 cm2 to cover a 12 arcmin field of view and a pixel size of 625 × 625 μm2 adapted to the telescope's resolution of 20 arcsec. The additional LED specifications are: high energy resolution, high quantum efficiency, fast readout and optional window mode, monolithic device with 100 % fill factor and suspension mounting, and operation at warm temperature. To match these requirements the low energy detector is composed of 'active macro pixels', combining the large, scalable area of a Silicon Drift Detector and the low-noise, on-demand readout of an integrated DEPFET amplifier. Flight representative prototypes have been processed at the MPI semiconductor laboratory, and the prototype's measured performance demonstrates the technology readiness.

  17. ion irradiation

    Indian Academy of Sciences (India)

    Swift heavy ions interact predominantly through inelastic scattering while traversing any polymer medium and produce excited/ionized atoms. Here samples of the polycarbonate Makrofol of approximate thickness 20 m, spin coated on GaAs substrate were irradiated with 50 MeV Li ion (+3 charge state). Build-in ...

  18. Solar-assisted low energy dwellings

    Energy Technology Data Exchange (ETDEWEB)

    Esbensen, T V

    1980-02-01

    The Zero Energy House Group was formed as a subproject of the CCMS Solar Energy Pilot Study in 1974 by seven participating countries experimenting with solar-assisted low-energy dwellings for temperate and northern European climatic conditions. A Zero Energy House is one in which solar energy is used to meet the reduced energy needs of buildings incorporating various thermal energy conservation features. This final report of the Zero Energy House Group includes brief descriptions of 13 major low-energy dwellings in the participating CCMS countries. An overall assessment of the state-of-the-art in solar-assisted low-energy dwellings is also included.

  19. Development and performance evaluation of a three-dimensional clinostat synchronized heavy-ion irradiation system

    Science.gov (United States)

    Ikeda, Hiroko; Souda, Hikaru; Puspitasari, Anggraeini; Held, Kathryn D.; Hidema, Jun; Nikawa, Takeshi; Yoshida, Yukari; Kanai, Tatsuaki; Takahashi, Akihisa

    2017-02-01

    Outer space is an environment characterized by microgravity and space radiation, including high-energy charged particles. Astronauts are constantly exposed to both microgravity and radiation during long-term stays in space. However, many aspects of the biological effects of combined microgravity and space radiation remain unclear. We developed a new three-dimensional (3D) clinostat synchronized heavy-ion irradiation system for use in ground-based studies of the combined exposures. Our new system uses a particle accelerator and a respiratory gating system from heavy-ion radiotherapy to irradiate samples being rotated in the 3D clinostat with carbon-ion beams only when the samples are in the horizontal position. A Peltier module and special sample holder were loaded on a static stage (standing condition) and the 3D clinostat (rotation condition) to maintain a suitable temperature under atmospheric conditions. The performance of the new device was investigated with normal human fibroblasts 1BR-hTERT in a disposable closed cell culture chamber. Live imaging revealed that cellular adhesion and growth were almost the same for the standing control sample and rotation sample over 48 h. Dose flatness and symmetry were judged according to the relative density of Gafchromic films along the X-axis and Y-axis of the positions of the irradiated sample to confirm irradiation accuracy. Doses calculated using the carbon-ion calibration curve were almost the same for standing and rotation conditions, with the difference being less than 5% at 1 Gy carbon-ion irradiation. Our new device can accurately synchronize carbon-ion irradiation and simulated microgravity while maintaining the temperature under atmospheric conditions at ground level.

  20. In situ crystallization of sputter-deposited TiNi by ion irradiation

    International Nuclear Information System (INIS)

    Ikenaga, Noriaki; Kishi, Yoichi; Yajima, Zenjiro; Sakudo, Noriyuki

    2013-01-01

    Highlights: ► We developed a sputtering deposition process equipped with an ion irradiation system. ► Ion irradiation enables crystallization at lower substrate temperature. ► Ion fluence has an effective range for low-temperature crystallization. ► Crystallized films made on polyimide by the process show the shape memory effect. -- Abstract: TiNi is well known as a typical shape-memory alloy, and the shape-memory property appears only when the structure is crystalline. Until recently, the material has been formed as amorphous film by single-target sputtering deposition at first and then crystallized by being annealed at high temperature over 500 °C. Therefore, it has been difficult to make crystalline TiNi film directly on a substrate of polymer-based material because of the low heat resistance of substrate. In order to realize an actuator from the crystallized TiNi film on polymer substrates, the substrate temperature should be kept below 200 °C throughout the whole process. In our previous studies we have found that deposited film can be crystallized at very low temperature without annealing but with simultaneous irradiation of Ar ions during sputter-deposition. And we have also demonstrated the shape-memory effect with the TiNi film made by the new process. In order to investigate what parameters of the process contribute to the low-temperature crystallization, we have focused to the ion fluence of the ion irradiation. Resultantly, it was found that the transition from amorphous structure to crystal one has a threshold range of ion fluence

  1. A review of transmission electron microscopes with in situ ion irradiation

    Science.gov (United States)

    Hinks, J. A.

    2009-12-01

    Transmission electron microscopy (TEM) with in situ ion irradiation is unique amongst experimental techniques in allowing the direct observation of the internal microstructure of materials on the nanoscale whilst they are being subjected to bombardment with energetic particles. Invaluable insights into the underlying atomistic processes at work can be gained through direct investigation of radiation induced and enhanced effects such as: phase changes and segregation; mechanical and structural changes; atomic/layer mixing and chemical disorder; compositional changes; chemical reactions; grain growth and shrinkage; precipitation and dissolution; defect/bubble formation, growth, motion, coalescence, removal and destruction; ionisation; diffusion; and collision cascades. The experimental results obtained can be used to validate the predictions of computational models which in turn can elucidate the mechanisms behind the phenomena seen in the microscope. It is 50 years since the first TEM observations of in situ ion irradiation were made by D.W. Pashley, A.E.B. Presland and J.W. Menter at the Tube Investment Laboratories in Cambridge, United Kingdom and 40 years since the first interfacing of an ion beam system with a TEM by P.A. Thackery, R.S. Nelson and H.C. Sansom at the Atomic Energy Research Establishment at Harwell, United Kingdom. In that time the field has grown with references in the literature to around thirty examples of such facilities. This paper gives an overview of the importance of the technique, especially with regard to the current challenges faced in understanding radiation damage in nuclear environments; a description of some of the important construction elements and design considerations of TEMs with in situ ion irradiation; a brief history of the development of this type of instrument; a summary of the facilities built around the world over the last half century; and finally a focus on the instruments in operation today.

  2. Fundamental physics with low-energy neutrons

    International Nuclear Information System (INIS)

    Barrón-Palos, Libertad

    2016-01-01

    Low-energy neutrons are playing a prominent role in a growing number of fundamental physics studies. This paper provides a brief description of the physics that some of the experiments in the area are addressing. (paper)

  3. Pion nucleon interaction at low energy

    International Nuclear Information System (INIS)

    Banerjee, M.K.

    1979-03-01

    A theory of the πN interaction at low energy is described. An analogy is made with an unusual approach to potential scattering theory. Phase shifts, cross sections, and scattering amplitudes and lengths are calculated. 28 references

  4. Current status of low energy EB machine

    International Nuclear Information System (INIS)

    Toshiro Nishikimi; Shuichi Taniguchi; Kenichi Mizusawa

    1999-01-01

    Electron beam processing systems have been in use in a variety of applications such as curing of paints and printing inks, crosslinking of PE products, treating of rubber tire and so on. Low energy electron processing systems have become popular as self-shielded machines, which are compact and easy to use and do not require special facility as an irradiation room. This manuscript introduces the status of low energy EB (electron beam) machine through Nissin's products current

  5. Enhancement Mechanisms of Low Energy Nuclear Reactions

    OpenAIRE

    Gareev, F. A.; Zhidkova, I. E.

    2005-01-01

    The review of possible stimulation mechanisms of LENR (low energy nuclear reaction) is represented. We have concluded that transmutation of nuclei at low energies and excess heat are possible in the framework of the modern physical theory - the universal resonance synchronization principle [1] and based on its different enhancement mechanisms of reaction rates are responsible for these processes [2]. The excitation and ionization of atoms may play role as a trigger for LENR. Superlow energy o...

  6. Exploring the Hidden Sector @ Low Energies

    CERN Multimedia

    CERN. Geneva

    2015-01-01

    Over the years we have accumulated a large number of indications for physics beyond the standard model. This new physics is often sought-after at high masses and energies. Here collider experiments can bring decisive insights. However, over recent years it has become increasingly clear that new physics can also appear at low energy, but extremely weak coupling. Experiments and observations at this `low energy frontier' therefore provide a powerful tool to gain insight into fundamental physics, which is complementary to accelerators.

  7. Positron annihilation lifetime characterization of oxygen ion irradiated rutile TiO2

    Science.gov (United States)

    Luitel, Homnath; Sarkar, A.; Chakrabarti, Mahuya; Chattopadhyay, S.; Asokan, K.; Sanyal, D.

    2016-07-01

    Ferromagnetic ordering at room temperature has been induced in rutile phase of TiO2 polycrystalline sample by O ion irradiation. 96 MeV O ion induced defects in rutile TiO2 sample has been characterized by positron annihilation spectroscopic techniques. Positron annihilation results indicate the formation of cation vacancy (VTi, Ti vacancy) in these irradiated TiO2 samples. Ab initio density functional theoretical calculations indicate that in TiO2 magnetic moment can be induced either by creating Ti or O vacancies.

  8. Induction of the Tn10 Precise Excision in E. coli Cells after Accelerated Heavy Ions Irradiation

    CERN Document Server

    Zhuravel, D V

    2003-01-01

    The influence of the irradiation of different kinds on the indication of the structural mutations in the bacteria Escherichia coli is considered. The regularities of the Tn10 precise excision after accelerated ^{4}He and ^{12}C ions irradiations with different linear energy transfer (LET) were investigated. Dose dependences of the survival and relative frequency of the Tn10 precise excision were obtained. It was shown, that the relative frequency of the Tn10 precise excision is the exponential function from the irradiation dose. Relative biological efficiency (RBE), and relative genetic efficiency (RGE) were calculated, and were treated as the function of the LET.

  9. Physico-chemical changes in heavy ions irradiated polymer foils by differential scanning calorimetry

    International Nuclear Information System (INIS)

    Ciesla, K.; Trautmann, Ch.; Vansant, E.F.

    1994-01-01

    The sample of commercial PETP (Hostaphan) and very heavy ions irradiated products were investigated by differential scanning calorimetry in nitrogen flow. Irradiation were performed with Dy ions of 13 MeV/u with fluences 5 x 10 10 ions/cm 2 . Differences were observed in melting behaviour of unirradiated and irradiated foils. The influence of irradiation conditions on the results was noticed. Moreover the samples of polyimide (Kapton) and polycarbonate (Macrofol) irradiated in similar conditions were examined by DSC. The DSC traces have been compared with those of unirradiated reference samples. (author). 8 refs, 5 figs

  10. Lowering of the L10 ordering temperature of FePt nanoparticles by He+ ion irradiation

    International Nuclear Information System (INIS)

    Wiedwald, U.; Klimmer, A.; Kern, B.; Han, L.; Boyen, H.-G.; Ziemann, P.; Fauth, K.

    2007-01-01

    Arrays of FePt particles (diameter 7 nm) with mean interparticle distances of 60 nm are prepared by a micellar technique on Si substrates. The phase transition of these magnetic particles towards the chemically ordered L1 0 phase is tracked for 350 kV He + ion irradiated samples and compared to a nonirradiated reference. Due to the large separation of the magnetically decoupled particles the array can be safely annealed without any agglomeration as usually observed for more densely packed colloidal FePt nanoparticles. The He + ion exposure yields a significant reduction of the ordering temperature by more than 100 K

  11. Microanalysis on the Hydrogen Ion Irradiated 50 wt pct TiC-C Films

    Institute of Scientific and Technical Information of China (English)

    Hui JIANG; Yaoguang LIU; Ningkang HUANG

    2007-01-01

    The 50 wt pct TiC-C films were prepared on stainless steel substrates by using a technique of ion beam mixing.These films were irradiated by hydrogen ion beam with a dose of 1×1018 ions/cm2 and an energy of 5 keV.Microanalysis of X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS) were used to analyze the films before and after hydrogen ion irradiation and to study the mechanism of hydrogen resistance.

  12. Photoinduced currents in pristine and ion irradiated kapton-H polyimide

    Science.gov (United States)

    Sharma, Anu; Sridharbabu, Y.; Quamara, J. K.

    2014-10-01

    The photoinduced currents in pristine and ion irradiated kapton-H polyimide have been investigated for different applied electric fields at 200°C. Particularly the effect of illumination intensity on the maximum current obtained as a result of photoinduced polarization has been studied. Samples were irradiated by using PELLETRON facility, IUAC, New Delhi. The photo-carrier charge generation depends directly on intensity of illumination. The samples irradiated at higher fluence show a decrease in the peak current with intensity of illumination. The secondary radiation induced crystallinity (SRIC) is responsible for the increase in maximum photoinduced currents generated with intensity of illumination.

  13. Photoinduced currents in pristine and ion irradiated kapton-H polyimide

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Anu, E-mail: sharmaanu81@gmail.com; Sridharbabu, Y., E-mail: sharmaanu81@gmail.com; Quamara, J. K., E-mail: sharmaanu81@gmail.com [Physics Department, SGTB Khalsa college, Delhi University, Delhi (India); Department of Physics, National Institute of Technology, Kurukshetra-136119 (India); Echelon Group of Institutions, Faridabad (India)

    2014-10-15

    The photoinduced currents in pristine and ion irradiated kapton-H polyimide have been investigated for different applied electric fields at 200°C. Particularly the effect of illumination intensity on the maximum current obtained as a result of photoinduced polarization has been studied. Samples were irradiated by using PELLETRON facility, IUAC, New Delhi. The photo-carrier charge generation depends directly on intensity of illumination. The samples irradiated at higher fluence show a decrease in the peak current with intensity of illumination. The secondary radiation induced crystallinity (SRIC) is responsible for the increase in maximum photoinduced currents generated with intensity of illumination.

  14. Effect of irradiation spectrum on the microstructure of ion-irradiated Al2O3

    International Nuclear Information System (INIS)

    Zinkle, S.J.

    1994-01-01

    Polycrystalline samples of alpha-alumina have been irradiated with various ions ranging from 3.6 MeV Fe + to 1 MeV H + ions at 650 C. Cross-section transmission electron microscopy was used to investigate the depth-dependent microstructure of the irradiated specimens. The microstructure following irradiation was observed to be dependent on the irradiation spectrum. In particular, defect cluster nucleation was effectively suppressed in specimens irradiated with light ions such as 1 MeV H + ions. On the other hand, light ion irradiation tended to accelerate the growth rate of dislocation loops. The microstructural observations are discussed in terms of ionization enhanced diffusion processes

  15. Swift heavy ion irradiation induced electrical degradation in deca-nanometer MOSFETs

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Yao; Yang, Zhimei; Gong, Min [Key Laboratory for Microelectronics, College of Physical Science and Technology, Sichuan University, Chengdu 610064 (China); Key Laboratory of High Energy Density Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Gao, Bo; Li, Yun; Lin, Wei; Li, Jinbo; Xia, Zhuohui [Key Laboratory for Microelectronics, College of Physical Science and Technology, Sichuan University, Chengdu 610064 (China)

    2016-09-15

    In this work, degradation of the electrical characteristics of 65 nm nMOSFETs under swift heavy ion irradiation is investigated. It was found that a heavy ion can generate a localized region of physical damage (ion latent track) in the gate oxide. This is the likely cause for the increased gate leakage current and soft breakdown (SBD) then hard breakdown (HBD) of the gate oxide. Except in the case of HBD, the devices retain their functionality but with degraded transconductance. The degraded gate oxide exhibits early breakdown behavior compatible with the model of defect generation and percolation path formation in the percolation model.

  16. Heavy Ion Irradiation Fluence Dependence for Single-Event Upsets of NAND Flash Memory

    Science.gov (United States)

    Chen, Dakai; Wilcox, Edward; Ladbury, Raymond; Kim, Hak; Phan, Anthony; Seidleck, Christina; LaBel, Kenneth

    2016-01-01

    We investigated the single-event effect (SEE) susceptibility of the Micron 16 nm NAND flash, and found the single-event upset (SEU) cross section varied inversely with fluence. The SEU cross section decreased with increasing fluence. We attribute the effect to the variable upset sensitivities of the memory cells. The current test standards and procedures assume that SEU follow a Poisson process and do not take into account the variability in the error rate with fluence. Therefore, heavy ion irradiation of devices with variable upset sensitivity distribution using typical fluence levels may underestimate the cross section and on-orbit event rate.

  17. Microstructural evolution in dual-ion irradiated 316SS under various helium injection schedules

    International Nuclear Information System (INIS)

    Kohyama, A.; Igata, N.; Ayrault, G.; Tokyo Univ.

    1984-01-01

    Dual-ion irradiated 316 SS samples with various helium injection schedules were studied. The intent of using different schedules was to either approximate the MFR condition, mimic the mixed spectrum reactor condition or mimic the fast reactor condition. The objective of this investigation is to study the influence of these different helium injection schedules on the microstructural development under irradiation. The materials for this study was 316 SS (MFE heat) with three thermomechanical pre-irradiation treatments: solution annealed, solution annealed and aged and 20% cold worked. The cavity nucleation and growth stages were investigated using high resolution TEM. (orig.)

  18. Comparison of ion irradiation damage in three grades of unalloyed molybdenum

    International Nuclear Information System (INIS)

    Bradley, E.R.

    1976-01-01

    Transmission electron microscopy has been employed to characterize the ion irradiation damage in three grades of unalloyed molybdenum. The materials were irradiated with 5 MeV Ni 2+ ions at temperatures of 900 and 1000 0 C. Major differences exist in both the void and dislocation components of the damage and are attributed to differences in the carbon content of the three materials. A model, whereby carbon atoms segregate to small loops and decrease the bias for self interstitials, is used to qualitatively explain the observed variations in microstructure

  19. Surface modification and metallization of polycarbonate using low energy ion beam

    International Nuclear Information System (INIS)

    Reheem, A.M. Abdel; Maksoud, M.I.A. Abdel; Ashour, A.H.

    2016-01-01

    The low energy argon ion is used for irradiation polycarbonate samples using cold cathode ion source. The surface of the PC substrates is examined using SEM, UV-spectroscopy and FTIR. It was found that the energy band gap decrease by increase argon ion fluence. Copper films are deposited onto polycarbonate (PC) substrates after irradiation by argon ion beam. The structure, surface morphology and the optical band gap are investigated using XRD, SEM and UV spectroscopy. It can be seen that the intensity increases with deposition time and band gap decreases from 3.45 eV for the pristine PC to ∼1.7 eV for copper thin film. - Highlights: • The low energy argon ion is used for irradiation polycarbonate samples. • The surface roughness increase from 9 µm to 23.5 µm after argon ion irradiated. • Copper films are deposited onto polycarbonate (PC) substrates. • Energy band gap decreases from 3.45 eV for pristine to 1.7 eV for copper thin film.

  20. The study on the electrical resistivity of Cu/V multilayer films subjected to helium (He) ion irradiation

    Science.gov (United States)

    Wang, P. P.; Xu, C.; Fu, E. G.; Du, J. L.; Gao, Y.; Wang, X. J.; Qiu, Y. H.

    2018-05-01

    Sputtering-deposited Cu/V multilayer films with the individual layer thickness varying from 2.5 nm to 100 nm were irradiated by 1 MeV helium (He) ion at the fluence of 6 ×1016 ions ·cm-2 at room temperature. The resistivity of Cu/V multilayer films after ion irradiation was evaluated as a function of individual layer thickness at 300 K and compared with their resistivity before ion irradiation. The results show that the resistivity change before and after ion irradiation is largely determined by the interface structure, grain boundary and radiation induced defects. A model amended based on the model used in describing the resistivity of as-deposited Cu/V multilayer films was proposed to describe the resistivity of ion irradiated Cu/V multilayer films by considering the point defects induced by ion irradiation, the effect of interface absorption on defects and the effect of interface microstructure in the multilayer films.

  1. Surface structure of Cr0.5 Ti0.5N coatings after heavy ions irradiation and annealing

    International Nuclear Information System (INIS)

    Kislitsin, Sergey; Gorlachev, Igor; Uglov, Vladimir

    2015-01-01

    Results of surface structure investigations of TiCrN coating on carbon steel after irradiation by helium, krypton and xenon heavy ions are reported in the present publication. The series of Cr50Ti50N coatings on carbon steel with thickness of 50,..., 300 nm were formed by vacuum arc deposition techniques. Specimens with TiCrN coating on carbon steel were irradiated by low energy 4 He +1 (22 keV) and 4 He +2 (40 keV) ions and high energy Xe +18 and Kr +14 ions with energy of 1.5 MeV/nucleon. Fluence of He ions was 1.0x10 17 ion.cm -2 , fluence of Xe and Kr ions was 5x10 14 -1.0x10 15 ion.cm -2 , irradiation temperature did not exceed 150 deg. C. Study of surface structure was performed by scanning electron microscopy (SEM) and atomic force microscopy (AFM). Methods of Roentgen diffractometry and Rutherford backscattering was applied for determination of structure and thickness of coating. In case of irradiation with Xe +18 and Kr +14 ions an investigation of surface morphology and structure was done after successive two hours vacuum annealing of irradiated samples at temperatures 400 deg. C, 500 deg. C and 600 deg. C. It was shown that after irradiation by Xe and Kr ions on the surface of coating convexities appear, surface density of which correlates with ion flux. In the case of Xe, ions irradiation generated convexities of spherical and elongated shape with dimensions ranging from ten to hundreds nm. In the case of Kr ions, only spherical globules were generated, dimensions of which are 10-30 nm. The most likely explanation of observed surface damage is that: convexities on the surface are generated at ion bombardment of specimens with coating. Convexities are the traces of ions passing through coating and they are due to structural reconstruction at energy release along a trajectory of ions braking. Convexities of elongated shape represent overlapping traces from two passing ions. When the projective range of Xe and Kr ions exceeds coating thickness, damage

  2. In-situ TEM studies of microstructure evolution under ion irradiation for nuclear engineering applications

    International Nuclear Information System (INIS)

    Kaoumi, D.

    2011-01-01

    One of the difficulties of studying processes occurring under irradiation (in a reactor environment) is the lack of kinetics information since usually samples are examined ex situ (i.e. after irradiation) so that only snapshots of the process are available. Given the dynamic nature of the phenomena, direct in situ observation is invaluable for better understanding the mechanisms, kinetics and driving forces of the processes involved. This can be done using in situ ion irradiation in a TEM at the IVEM facility at Argonne National Laboratory which, in the USA, is a unique facility. To predict the in reactor behavior of alloys, it is essential to understand the basic mechanisms of radiation damage formation (loop density, defect interactions) and accumulation (loop evolution, precipitation or dissolution of second phases etc.). In-situ Ion-irradiation in a TEM has proven a very good tool for that purpose as it allows for the direct determination of the formation and evolution of irradiation-induced damage and the spatial correlation of the defect structures with the pre-existing microstructure (including lath boundaries, network dislocations and carbides) as a function of dose, dose rate, temperature and ion type. Using this technique, different aspects of microstructure evolution under irradiation were studied, such as defect cluster formation and evolution as a function of dose in advanced Ferritic/Martensitic (F/M) steels, the irradiation stability of precipitates in Oxide Dispersion Strengthened (ODS) steels, and irradiation-induced grain-growth. Such studies will be reported in this presentation

  3. Effect of heavy ion irradiation on thermodynamically equilibrium Zr-Excel alloy

    Science.gov (United States)

    Yu, Hongbing; Liang, Jianlie; Yao, Zhongwen; Kirk, Mark A.; Daymond, Mark R.

    2017-05-01

    The thermodynamically equilibrium state was achieved in a Zr-Sn-Nb-Mo alloy by long-term annealing at an intermediate temperature. The fcc intermetallic Zr(Mo, Nb)2 enriched with Fe was observed at the equilibrium state. In-situ 1 MeV Kr2+ heavy ion irradiation was performed in a TEM to study the stability of the intermetallic particles under irradiation and the effects of the intermetallic particle on the evolution of type dislocation loops at different temperatures from 80 to 550 °C. Chemi-STEM elemental maps were made at the same particles before and after irradiation up to 10 dpa. It was found that no elemental redistribution occurs at 200 °C and below. Selective depletion of Fe was observed from some precipitates under irradiation at higher temperatures. No change in the morphology of particles and no evidence showing a crystalline to amorphous transformation were observed at all irradiation temperatures. The formation of type dislocation loops was observed under irradiation at 80 and 200 °C, but not at 450 and 550 °C. The loops were non-uniformly distributed; a localized high density of type dislocation loops were observed near the second phase particles; we suggest that loop nucleation is favored as a result of the stress induced by the particles, rather than by elemental redistribution. The stability of the second phase particles and the formation of the type loops under heavy ion irradiation are discussed.

  4. Influence of high energy ion irradiation on fullerene derivative (PCBM) thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Trupti, E-mail: tsphy91@gmail.com [Department of Physics, Malaviya National Institute of Technology, Jaipur 302017 (India); Singhal, Rahul; Vishnoi, Ritu [Department of Physics, Malaviya National Institute of Technology, Jaipur 302017 (India); Lakshmi, G.B.V.S. [Inter University Accelerator Centre, Post Box No. 10502, New Delhi 110067 (India); Biswas, S.K. [Department of Metallurgical and Materials Engineering, Malaviya National Institute of Technology, Jaipur 302017 (India)

    2017-04-01

    Highlights: • Spin casted PCBM thin films (∼100 nm) are irradiated with 55 MeV Si{sup 4+} ion beam. • The decrease in band gap is observed after irradiation. • The surface properties is also dependent on incident ion fluences. • Polymerization reactions induced by energetic ions leads to modifications. - Abstract: The modifications produced by 55 MeV Si{sup 4+} swift heavy ion irradiation on the phenyl C{sub 61} butyric acid methyl ester (PCBM) thin films (thickness ∼ 100 nm) has been enlightened. The PCBM thin films were irradiated at 1 × 10{sup 10}, 1 × 10{sup 11} and 1 × 10{sup 12} ions/cm{sup 2} fluences. After ion irradiation, the decreased optical band gap and FTIR band intensities were observed. The Raman spectroscopy reveals the damage produced by energetic ions. The morphological variation were investigated by atomic force microscopy and contact angle measurements and observed to be influenced by incident ion fluences. After 10{sup 11} ions/cm{sup 2} fluence, the overlapping of ion tracks starts and produced overlapping effects.

  5. Color center annealing and ageing in electron and ion-irradiated yttria-stabilized zirconia

    International Nuclear Information System (INIS)

    Costantini, Jean-Marc; Beuneu, Francois

    2005-01-01

    We have used X-band electron paramagnetic resonance (EPR) measurements at room-temperature (RT) to study the thermal annealing and RT ageing of color centers induced in yttria-stabilized zirconia (YSZ), i.e. ZrO 2 :Y with 9.5 mol% Y 2 O 3 , by swift electron and ion-irradiations. YSZ single crystals with the orientation were irradiated with 2.5 MeV electrons, and implanted with 100 MeV 13 C ions. Electron and ion beams produce the same two color centers, namely an F + -type center (singly ionized oxygen vacancy) and the so-called T-center (Zr 3+ in a trigonal oxygen local environment) which is also produced by X-ray irradiations. Isochronal annealing was performed in air up to 973 K. For both electron and ion irradiations, the defect densities are plotted versus temperature or time at various fluences. The influence of a thermal treatment at 1373 K of the YSZ single crystals under vacuum prior to the irradiations was also investigated. In these reduced samples, color centers are found to be more stable than in as-received samples. Two kinds of recovery processes are observed depending on fluence and heat treatment

  6. Mutation effects of C2+ ion irradiation on the greasy Nitzschia sp

    International Nuclear Information System (INIS)

    Yang, Y.N.; Liu, C.L.; Wang, Y.K.; Xue, J.M.

    2013-01-01

    Highlights: • The optimal conditions of C 2+ ion irradiation on Nitzschia sp. were discussed. • Get the “saddle type” survival curve. • One mutant whose lipid content improved significantly was selected. • The C 2+ ion irradiation didn’t change the algae's morphology and growth rate. - Abstract: Screening and nurturing algae with high productivity, high lipid content and strong stress resistance are very important in algae industry. In order to increase the lipid content, the Nitzschia sp. was irradiated with a 3 MeV C 2+ beam. The sample pretreatment method was optimized to obtain the best mutagenic condition and the survival ratio curve. The positive mutants with a significant improvement in lipid content were screened and their C 2+ mutagenic effects were analyzed by comparing the greasiness and growth characteristics with the wild type algae. Results showed that when the Nitzschia sp. was cultivated in nutritious medium containing 10% glycerol solution, and dried on the filter for 5 min after centrifugation, the realization of the microalgae heavy ion mutagenesis could be done. The survival ratio curve caused by C 2+ irradiation was proved to be “saddle-shaped”. A positive mutant was screened among 20 survivals after irradiation, the average lipid content of the mutation increased by 9.8% than the wild type after 4 generations. But the growth rate of the screened mutation didn’t change after the heavy ion implantation compared to the wild type algae

  7. Order-disorder phase transformation in ion-irradiated rare earth sesquioxides

    International Nuclear Information System (INIS)

    Tang, M.; Valdez, J. A.; Sickafus, K. E.; Lu, P.

    2007-01-01

    An order-to-disorder (OD) transformation induced by ion irradiation in rare earth (RE) sesquioxides, Dy 2 O 3 , Er 2 O 3 , and Lu 2 O 3 , was studied using grazing incidence x-ray diffraction and transmission electron microscopy. These sesquioxides are characterized by a cubic C-type RE structure known as bixbyite. They were irradiated with heavy Kr ++ ions (300 keV) and light Ne + ions (150 keV) at cryogenic temperature (∼120 K). In each oxide, following a relatively low ion irradiation dose of ∼2.5 displacements per atom, the ordered bixbyite structure was transformed to a disordered, anion-deficient fluorite structure. This OD transformation was found in all three RE sesquioxides (RE=Dy, Er, and Lu) regardless of the ion type used in the irradiation. The authors discuss the irradiation-induced OD transformation process in terms of anion disordering, i.e., destruction of the oxygen order associated with the bixbyite structure

  8. Phase stability in thermally-aged CASS CF8 under heavy ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Li, Meimei, E-mail: mli@anl.gov [Argonne National Laboratory, 9700 S. Cass Avenue, Argonne, IL 60439 (United States); Miller, Michael K. [Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, TN 37831 (United States); Chen, Wei-Ying [Argonne National Laboratory, 9700 S. Cass Avenue, Argonne, IL 60439 (United States)

    2015-07-15

    Highlights: • Thermally-aged CF8 was irradiated with 1 MeV Kr ions at 400 °C. • Atom probe tomography revealed a strong dose dependence of G-phase precipitates. • Phase separation of α and α′ in ferrite was reduced after irradiation. - Abstract: The stability of the microstructure of a cast austenitic stainless steel (CASS), before and after heavy ion irradiation, was investigated by atom probe tomography (APT). A CF8 ferrite–austenite duplex alloy was thermally aged at 400 °C for 10,000 h. After this treatment, APT revealed nanometer-sized G-phase precipitates and Fe-rich α and Cr-enriched α′ phase separated regions in the ferrite. The thermally-aged CF8 specimen was irradiated with 1 MeV Kr ions to a fluence of 1.88 × 10{sup 19} ions/m{sup 2} at 400 °C. After irradiation, APT analysis revealed a strong spatial/dose dependence of the G-phase precipitates and the α–α′ spinodal decomposition in the ferrite. For the G-phase precipitates, the number density increased and the mean size decreased with increasing dose, and the particle size distribution changed considerably under irradiation. The inverse coarsening process can be described by recoil resolution. The amplitude of the α–α′ spinodal decomposition in the ferrite was apparently reduced after heavy ion irradiation.

  9. Chemical Bonding States of TiC Films before and after Hydrogen Ion Irradiation

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    TiC films deposited by rf magnetron sputtering followed by Ar+ ion bombardment were irradiated with a hydrogen ion beam. X-ray photoelectron spectroscopy (XPS) was used for characterization of the chemical bonding states of C and Ti elements of the TiC films before and after hydrogen ion irradiation, in order to understand the effect of hydrogen ion irradiation on the films and to study the mechanism of hydrogen resistance of TiC films. Conclusions can be drawn that ion bombardment at moderate energy can cause preferential physical sputtering of carbon atoms from the surface of low atomic number (Z) material. This means that ion beam bombardment leads to the formation of a non-stoichiometric composition of TiC on the surface.TiC films prepared by ion beam mixing have the more excellent characteristic of hydrogen resistance. One important cause, in addition to TiC itself, is that there are many vacant sites in TiC created by ion beam mixing.These defects can easily trap hydrogen and effectively enhance the effect of hydrogen resistance.

  10. Accumulation of dislocation loops in the α phase of Zr Excel alloy under heavy ion irradiation

    Science.gov (United States)

    Yu, Hongbing; Yao, Zhongwen; Idrees, Yasir; Zhang, He K.; Kirk, Mark A.; Daymond, Mark R.

    2017-08-01

    In-situ heavy ion irradiations were performed on the high Sn content Zr alloy 'Excel', measuring type dislocation loop accumulation up to irradiation damage doses of 10 dpa at a range of temperatures. The high content of Sn, which diffuses slowly, and the thin foil geometry of the sample provide a unique opportunity to study an extreme case where displacement cascades dominate the loop formation and evolution. The dynamic observation of dislocation loop evolution under irradiation at 200 °C reveals that type dislocation loops can form at very low dose (0.0025 dpa). The size of the dislocation loops increases slightly with irradiation damage dose. The mechanism controlling loop growth in this study is different from that in neutron irradiation; in this study, larger dislocation loops can condense directly from the interaction of displacement cascades and the high concentration of point defects in the matrix. The size of the dislocation loop is dependent on the point defect concentration in the matrix. A negative correlation between the irradiation temperature and the dislocation loop size was observed. A comparison between cascade dominated loop evolution (this study), diffusion dominated loop evolution (electron irradiation) and neutron irradiation suggests that heavy ion irradiation alone may not be enough to accurately reproduce neutron irradiation induced loop structures. An alternative method is proposed in this paper. The effects of Sn on the displacement cascades, defect yield, and the diffusion behavior of point defects are established.

  11. Tuning the hydrophobicity of mica surfaces by hyperthermal Ar ion irradiation

    International Nuclear Information System (INIS)

    Keller, Adrian; Ogaki, Ryosuke; Bald, Ilko; Dong Mingdong; Kingshott, Peter; Fritzsche, Monika; Facsko, Stefan; Besenbacher, Flemming

    2011-01-01

    The hydrophobicity of surfaces has a strong influence on their interactions with biomolecules such as proteins. Therefore, for in vitro studies of bio-surface interactions model surfaces with tailored hydrophobicity are of utmost importance. Here, we present a method for tuning the hydrophobicity of atomically flat mica surfaces by hyperthermal Ar ion irradiation. Due to the sub-100 eV energies, only negligible roughening of the surface is observed at low ion fluences and also the chemical composition of the mica crystal remains almost undisturbed. However, the ion irradiation induces the preferential removal of the outermost layer of K + ions from the surface, leading to the exposure of the underlying aluminosilicate sheets which feature a large number of centers for C adsorption. The irradiated surface thus exhibits an enhanced chemical reactivity toward hydrocarbons, resulting in the adsorption of a thin hydrocarbon film from the environment. Aging these surfaces under ambient conditions leads to a continuous increase of their contact angle until a fully hydrophobic surface with a contact angle >80 deg. is obtained after a period of about 3 months. This method thus enables the fabrication of ultrasmooth biological model surfaces with precisely tailored hydrophobicity.

  12. Structural and electrical evolution of He ion irradiated hydrocarbon films observed by conductive atomic force microscopy

    International Nuclear Information System (INIS)

    Fan, Hongyu; Yang, Deming; Sun, Li; Yang, Qi; Niu, Jinhai; Bi, Zhenhua; Liu, Dongping

    2013-01-01

    Polymer-like hydrocarbon films are irradiated with 100 keV He ion at the fluences of 1.0 × 10 15 –1.0 × 10 17 ions/cm 2 or at the irradiation temperature ranging from 25 to 600 °C. Conductive atomic force microscopy (CAFM) has been used to evaluate the nanoscale electron conducting properties of these irradiated hydrocarbon films. Nanoscale and conducting defects have been formed in the hydrocarbon films irradiated at a relatively high ion fluence (1.0 × 10 17 ions/cm 2 ) or an elevated sample temperature. Analysis indicates that He ion irradiation results in the evolution of polymer-like hydrocarbon into a dense structure containing a large fraction of sp 2 carbon clusters. The sp 2 carbon clusters formed in irradiated hydrocarbon films can contribute to the formation of filament-like conducting channels with a relatively high local field-enhancing factor. Measurements indicate that the growth of nanoscale defects due to He ion irradiation can result in the surface swelling of irradiated hydrocarbon films at a relatively high ion fluences or elevated temperature

  13. Evaluation of KTJT-1, an early-maturity of sweet sorghum acquired by carbon ions irradiation

    International Nuclear Information System (INIS)

    Dong Xicun; Li Wenjian

    2014-01-01

    Sweet sorghum has the potential of becoming a useful energy crop. An early-maturity mutant of sweet sorghum, KFJT-1, was obtained by carbon ions irradiation of KFJT-CK, a wild plant. In this paper, we evaluate the mutant from the length and fresh weight of radicle and leaves after seed germination, the growth rate at the elongation stage, and the internodal parameters under field trail condition. The results showed that the seedling growth of KFJT-1 was inhibited by carbon ions irradiation, and the leaf length, the fresh weight of radicle and leaves from KFJT-1 decreased by 15.32%, 76.27%, and 27.08% than those of KFJT-CK, respectively. However, the growth rate of KFJT-1 on July 12, July 27 and August 1 increased by 16.19%, 59.28% and 26.87%, respectively, compared with the KFJT-CK. The stalk diameter, total biomass yield and sugar content of KFJT-1 was higher than those of KFJT-CK, despite that the plant height of KFJT-1 was significantly less than KFJT-CK (P<0.05). In addition, KFJT-1 differed from KFJT-CK in the internodal length, weight and sugar content. In conclusion, the early-maturity mutant of KFJT-1 will be a promising variety for sweet sorghum industrialization in Gansu province, China. (authors)

  14. Evidence of amorphous interdiffusion layer in heavy ion irradiated U–8wt%Mo/Al interfaces

    International Nuclear Information System (INIS)

    Chiang, H-Y.; Zweifel, T.; Palancher, H.; Bonnin, A.; Beck, L.; Weiser, P.; Döblinger, M.; Sabathier, C.; Jungwirth, R.; Petry, W.

    2013-01-01

    U–Mo/Al based nuclear fuels are worldwide considered as the most promising high density fuel for the conversion of high flux research and test reactors from highly enriched uranium to lower enrichment. However in-pile growth of an amorphous interdiffusion layer at the U–Mo/Al interfaces strongly limits the performances of this fuel. Several in-pile tests have been performed to optimize the composition. In this paper, a breakthrough in simulating the U–8wt%Mo/Al behavior under out-of-pile irradiation is reported. It is shown that an amorphous U–8wt%Mo/Al interdiffusion layer (IDL) is obtained by heavy ion irradiation ( 127 I) in a U–Mo/Al diffusion couple under controlled temperature conditions. The properties of this IDL coincide with the results obtained from in-pile tests. This methodological work clearly indicates that heavy ion irradiations could be routinely applied for optimizing composition of U–Mo/Al nuclear fuels. In other words these out-of-pile tests using ion beams could become a representative, efficient and economic step before in-pile irradiation

  15. Changes of structural and hydrogen desorption properties of MgH2 indused by ion irradiation

    Directory of Open Access Journals (Sweden)

    Kurko Sandra V.

    2010-01-01

    Full Text Available Changes in structural and hydrogen desorption properties of MgH2 induced by ion irradiation have been investigated. MgH2 powder samples have been irradiated with 45 keV B3+ and 120 keV Ar8+ions, with ion fluence of 1015 ions/cm2. The effects of ion irradiation are estimated by numerical calculations using SRIM package. The induced material modifications and their consequences on hydrogen dynamics in the system are investigated by XRD, particle size distribution and TPD techniques. Changes of TPD spectra with irradiation conditions suggest that there are several mechanisms involved in desorption process which depend on defect concentration and their interaction and ordering. The results confirmed that the near-surface area of MgH2 and formation of a substoichiometric MgHx (x<2 play a crucial role in hydrogen kinetics and that various concentrations of induced defects substantially influence H diffusion and desorption kinetics in MgH2. The results also confirm that there is possibility to control the thermodynamic parameters by controlling vacancies concentration in the system.

  16. High-fluence hyperthermal ion irradiation of gallium nitride surfaces at elevated temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Finzel, A.; Gerlach, J.W., E-mail: juergen.gerlach@iom-leipzig.de; Lorbeer, J.; Frost, F.; Rauschenbach, B.

    2014-10-30

    Highlights: • Irradiation of gallium nitride films with hyperthermal nitrogen ions. • Surface roughening at elevated sample temperatures was observed. • No thermal decomposition of gallium nitride films during irradiation. • Asymmetric surface diffusion processes cause local roughening. - Abstract: Wurtzitic GaN films deposited on 6H-SiC(0001) substrates by ion-beam assisted molecular-beam epitaxy were irradiated with hyperthermal nitrogen ions with different fluences at different substrate temperatures. In situ observations with reflection high energy electron diffraction showed that during the irradiation process the surface structure of the GaN films changed from two dimensional to three dimensional at elevated temperatures, but not at room temperature. Atomic force microscopy revealed an enhancement of nanometric holes and canyons upon the ion irradiation at higher temperatures. The roughness of the irradiated and heated GaN films was clearly increased by the ion irradiation in accordance with x-ray reflectivity measurements. A sole thermal decomposition of the films at the chosen temperatures could be excluded. The results are discussed taking into account temperature dependent sputtering and surface uphill adatom diffusion as a function of temperature.

  17. Anisotropic deformation of metallo-dielectric core-shell colloids under MeV ion irradiation

    International Nuclear Information System (INIS)

    Penninkhof, J.J.; Dillen, T. van; Roorda, S.; Graf, C.; Blaaderen, A. van; Vredenberg, A.M.; Polman, A.

    2006-01-01

    We have studied the deformation of metallo-dielectric core-shell colloids under 4 MeV Xe, 6 and 16 MeV Au, 30 MeV Si and 30 MeV Cu ion irradiation. Colloids of silica surrounded by a gold shell, with a typical diameter of 400 nm, show anisotropic plastic deformation under MeV ion irradiation, with the metal flowing conform the anisotropically deforming silica core. The 20 nm thick metal shell imposes a mechanical constraint on the deforming silica core, reducing the net deformation strain rate compared to that of pure silica. In colloids consisting of a Au core and a silica shell, the silica expands perpendicular to the ion beam, while the metal core shows a large elongation along the ion beam direction, provided the silica shell is thick enough (>40 nm). A minimum electronic energy loss of 3.3 keV/nm is required for shape transformation of the metal core. Silver cores embedded in a silica shell show no elongation, but rather disintegrate. Also in planar SiO 2 films, Au and Ag colloids show entirely different behavior under MeV irradiation. We conclude that the deformation model of core-shell colloids must include ion-induced particle disintegration in combination with thermodynamical effects, possibly in combination with mechanical effects driven by stresses around the ion tracks

  18. Anisotropic deformation of metallo-dielectric core shell colloids under MeV ion irradiation

    Science.gov (United States)

    Penninkhof, J. J.; van Dillen, T.; Roorda, S.; Graf, C.; van Blaaderen, A.; Vredenberg, A. M.; Polman, A.

    2006-01-01

    We have studied the deformation of metallo-dielectric core-shell colloids under 4 MeV Xe, 6 and 16 MeV Au, 30 MeV Si and 30 MeV Cu ion irradiation. Colloids of silica surrounded by a gold shell, with a typical diameter of 400 nm, show anisotropic plastic deformation under MeV ion irradiation, with the metal flowing conform the anisotropically deforming silica core. The 20 nm thick metal shell imposes a mechanical constraint on the deforming silica core, reducing the net deformation strain rate compared to that of pure silica. In colloids consisting of a Au core and a silica shell, the silica expands perpendicular to the ion beam, while the metal core shows a large elongation along the ion beam direction, provided the silica shell is thick enough (>40 nm). A minimum electronic energy loss of 3.3 keV/nm is required for shape transformation of the metal core. Silver cores embedded in a silica shell show no elongation, but rather disintegrate. Also in planar SiO2 films, Au and Ag colloids show entirely different behavior under MeV irradiation. We conclude that the deformation model of core-shell colloids must include ion-induced particle disintegration in combination with thermodynamical effects, possibly in combination with mechanical effects driven by stresses around the ion tracks.

  19. Deuterium ion irradiation induced precipitation in Fe–Cr alloy: Characterization and effects on irradiation behavior

    International Nuclear Information System (INIS)

    Liu, P.P.; Yu, R.; Zhu, Y.M.; Zhao, M.Z.; Bai, J.W.; Wan, F.R.; Zhan, Q.

    2015-01-01

    Highlights: • A new phase precipitated in Fe–Cr alloy after deuterium ion irradiation at 773 K. • B2 structure was proposed for the Cr-rich new phase. • Strain fields around the precipitate have been measured by GPA. • The precipitate decrease growth rate of dislocation loop under electron irradiation. - Abstract: A new phase was found to precipitate in a Fe–Cr model alloy after 58 keV deuterium ion irradiation at 773 K. The nanoscale radiation-induced precipitate was studied systematically using high resolution transmission electron microscopy (HRTEM), image simulation and in-situ ultrahigh voltage transmission electron microscopy (HVEM). B2 structure is proposed for the new Cr-rich phase, which adopts a cube-on-cube orientation relationship with regard to the Fe matrix. Geometric phase analysis (GPA) was employed to measure the strain fields around the precipitate and this was used to explain its characteristic 1-dimensional elongation along the 〈1 0 0〉 Fe direction. The precipitate was stable under subsequent electron irradiation at different temperatures. We suggest that the precipitate with a high interface-to-volume ratio enhances the radiation resistance of the material. The reason for this is the presence of a large number of interfaces between the precipitate and the matrix, which may greatly reduce the concentration of point defects around the dislocation loops. This leads to a significant decrease in the growth rate

  20. Zirconium hydrides and Fe redistribution in Zr-2.5%Nb alloy under ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Idrees, Y.; Yao, Z. [Department of Mechanical and Materials Engineering, Queen' s University, Kingston, ON, Canada, K7L 3N6 (Canada); Cui, J.; Shek, G.K. [Kinetrics, Mississauga, ON (Canada); Daymond, M.R., E-mail: daymond@queensu.ca [Department of Mechanical and Materials Engineering, Queen' s University, Kingston, ON, Canada, K7L 3N6 (Canada)

    2016-11-15

    Zr-2.5%Nb alloy is used to fabricate the pressure tubes of the CANDU reactor. The pressure tube is the primary pressure boundary for coolant in the CANDU design and is susceptible to delayed hydride cracking, reduction in fracture toughness upon hydride precipitation and potentially hydride blister formation. The morphology and nature of hydrides in Zr-2.5%Nb with 100 wppm hydrogen has been investigated using transmission electron microscopy. The effect of hydrides on heavy ion irradiation induced decomposition of the β phase has been reported. STEM-EDX mapping was employed to investigate the distribution of alloying elements. The results show that hydrides are present in the form of stacks of different sizes, with length scales from nano- to micro-meters. Heavy ion irradiation experiments at 250 °C on as-received and hydrided Zr-2.5%Nb alloy, show interesting effects of hydrogen on the irradiation induced redistribution of Fe. It was found that Fe is widely redistributed from the β phase into the α phase in the as-received material, however, the loss of Fe from the β phase and subsequent precipitation is retarded in the hydrided material. This preliminary work will further the current understanding of microstructural evolution of Zr based alloys in the presence of hydrogen. - Graphical abstract: STEM HAADF micrographs at low magnification showing the hydride structure in Zr-2.5Nb alloy.

  1. TEM in situ micropillar compression tests of ion irradiated oxide dispersion strengthened alloy

    Energy Technology Data Exchange (ETDEWEB)

    Yano, K.H., E-mail: kaylayano@u.boisestate.edu [Boise State University, 1910 University Drive, Boise, ID, 83725 (United States); Swenson, M.J. [Boise State University, 1910 University Drive, Boise, ID, 83725 (United States); Wu, Y. [Boise State University, 1910 University Drive, Boise, ID, 83725 (United States); Center for Advanced Energy Studies, 995 University Blvd, Idaho Falls, ID, 83401 (United States); Wharry, J.P. [Boise State University, 1910 University Drive, Boise, ID, 83725 (United States); Purdue University, 400 Central Drive, West Lafayette, IN 47907 (United States)

    2017-01-15

    The growing role of charged particle irradiation in the evaluation of nuclear reactor candidate materials requires the development of novel methods to assess mechanical properties in near-surface irradiation damage layers just a few micrometers thick. In situ transmission electron microscopic (TEM) mechanical testing is one such promising method. In this work, microcompression pillars are fabricated from a Fe{sup 2+} ion irradiated bulk specimen of a model Fe-9%Cr oxide dispersion strengthened (ODS) alloy. Yield strengths measured directly from TEM in situ compression tests are within expected values, and are consistent with predictions based on the irradiated microstructure. Measured elastic modulus values, once adjusted for the amount of deformation and deflection in the base material, are also within the expected range. A pillar size effect is only observed in samples with minimum dimension ≤100 nm due to the low inter-obstacle spacing in the as received and irradiated material. TEM in situ micropillar compression tests hold great promise for quantitatively determining mechanical properties of shallow ion-irradiated layers.

  2. Investigation of structural materials of reactors using high-energy heavy-ion irradiations

    International Nuclear Information System (INIS)

    Wang Zhiguang

    2007-01-01

    Radiation damage in structural materials of fission/fusion reactors is mainly attributed to the evolution of intensive atom displacement damage induced by energetic particles (n, α and/or fission fragments) and high-rate helium doping by direct α particle bombardments and/or (n, α) reactions. It can cause severe degradation of reactor structural materials such as surface blistering, bulk void swelling, deformation, fatigue, embrittlement, stress erosion corrosion and so on that will significantly affect the operation safety of reactors. However, up to now, behavior of structural materials at the end of their service can hardly be fully tested in a real reactor. In the present work, damage process in reactor structural materials is briefly introduced, then the advantages of energetic ion implantation/irradiation especially high-energy heavy ion irradiation are discussed, and several typical examples on simulation of radiation effects in reactor candidate structural materials using high-energy heavy ion irradiations are pronounced. Experimental results and theoretical analysis suggested that irradiation with energetic particles especially high-energy heavy ions is very useful technique for simulating the evolution of microstructures and macro-properties of reactor structural materials. Furthermore, an on-going plan of material irradiation experiments using high energy H- and He-ions based on the Heavy Ion Research Facilities in Lanzhou (HIRFL) is also briefly interpreted. (authors)

  3. Evidence of amorphous interdiffusion layer in heavy ion irradiated U–8wt%Mo/Al interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Chiang, H-Y. [Forschungsneutronenquelle Heinz Maier-Leibniz (FRM II), Technische Universität München Lichtenbergstr. 1, D-85747 Garching (Germany); Zweifel, T. [Forschungsneutronenquelle Heinz Maier-Leibniz (FRM II), Technische Universität München Lichtenbergstr. 1, D-85747 Garching (Germany); CEA, DEN, DEC, F-13108 St. Paul Lez Durance Cedex (France); Palancher, H., E-mail: herve.palancher@cea.fr [CEA, DEN, DEC, F-13108 St. Paul Lez Durance Cedex (France); Bonnin, A. [ESRF, 6 rue Jules Horowitz, 38042 Grenoble (France); Beck, L. [Tandembeschleuniger des Maier-Leibnitz-Labors (MLL), Am Coulombwall 6, D-85747 Garching (Germany); Weiser, P. [Walther Schottky Institut, Technische Universität München, Am Coulombwall 4, D-85747 Garching (Germany); Döblinger, M. [Department Chemie, Ludwig-Maximilians-Universität München (LMU), Butenandstr. 11, D-81377 München (Germany); Sabathier, C. [CEA, DEN, DEC, F-13108 St. Paul Lez Durance Cedex (France); Jungwirth, R.; Petry, W. [Forschungsneutronenquelle Heinz Maier-Leibniz (FRM II), Technische Universität München Lichtenbergstr. 1, D-85747 Garching (Germany)

    2013-09-15

    U–Mo/Al based nuclear fuels are worldwide considered as the most promising high density fuel for the conversion of high flux research and test reactors from highly enriched uranium to lower enrichment. However in-pile growth of an amorphous interdiffusion layer at the U–Mo/Al interfaces strongly limits the performances of this fuel. Several in-pile tests have been performed to optimize the composition. In this paper, a breakthrough in simulating the U–8wt%Mo/Al behavior under out-of-pile irradiation is reported. It is shown that an amorphous U–8wt%Mo/Al interdiffusion layer (IDL) is obtained by heavy ion irradiation ({sup 127}I) in a U–Mo/Al diffusion couple under controlled temperature conditions. The properties of this IDL coincide with the results obtained from in-pile tests. This methodological work clearly indicates that heavy ion irradiations could be routinely applied for optimizing composition of U–Mo/Al nuclear fuels. In other words these out-of-pile tests using ion beams could become a representative, efficient and economic step before in-pile irradiation.

  4. Ion irradiation-induced stress relaxation in thin films and multilayers deposited using energetic PVD techniques

    International Nuclear Information System (INIS)

    Abadias, Gregory; Michel, Anny; Debelle, Aurelien; Jaouen, Christiane; Djemia Philippe

    2009-01-01

    The aim of the present work is to understand the stress build-up during energetic PVD film growth and the stress relaxation during subsequent ion irradiation at low dose (typically in the range 0.1-1.0 displacement per atom). Monolithic Mo thin films and Mo/Ni multilayers were grown using Dual Ion Beam Sputtering and Magnetron Sputtering at room temperature. Due to the high energy of incoming species (sputtered atoms, backscattered Ar), growth defects of interstitial-type are created during growth. The defect density can reach up to 1.4 % (far from equilibrium) in these Mo refractory layers. These defects act as misfitting particles, inducing a hydrostatic stress component and an associated in-plane compressive stress component. However, after Ar ion irradiation at low dose (∼0.2 dpa), most of the stress is relieved, showing that the growth induced defects are highly unstable. For Ni layers, the compressive stress is much lower due to the higher bulk atom mobility in this metal, making annihilation of defects more effective. An intermixing occurring mainly at the Mo/Ni interfaces is revealed from a complete strain-stress analysis using X-ray Diffraction. The magnitude of this interfacial alloying is found to increase with the energetics of the PVD process and is at the origin of the huge softening of the C 4 4 elastic constant, as measured using Brillouin light scattering. (authors)

  5. Atomistic simulation of damage production by atomic and molecular ion irradiation in GaN

    International Nuclear Information System (INIS)

    Ullah, M. W.; Kuronen, A.; Nordlund, K.; Djurabekova, F.; Karaseov, P. A.; Titov, A. I.

    2012-01-01

    We have studied defect production during single atomic and molecular ion irradiation having an energy of 50 eV/amu in GaN by molecular dynamics simulations. Enhanced defect recombination is found in GaN, in accordance with experimental data. Instantaneous damage shows non-linearity with different molecular projectile and increasing molecular mass. Number of instantaneous defects produced by the PF 4 molecule close to target surface is four times higher than that for PF 2 molecule and three times higher than that calculated as a sum of the damage produced by one P and four F ion irradiation (P+4×F). We explain this non-linearity by energy spike due to molecular effects. On the contrary, final damage created by PF 4 and PF 2 shows a linear pattern when the sample cools down. Total numbers of defects produced by Ag and PF 4 having similar atomic masses are comparable. However, defect-depth distributions produced by these species are quite different, also indicating molecular effect.

  6. Structural and electrical evolution of He ion irradiated hydrocarbon films observed by conductive atomic force microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Fan, Hongyu [School of Physics and Materials Engineering, Dalian Nationalities University, Dalian 116600 (China); Yang, Deming [School of Physics and Materials Engineering, Dalian Nationalities University, Dalian 116600 (China); School of Science, Changchun University of Science and Technology, Changchun, Jilin 130022 (China); Sun, Li [School of Physics and Materials Engineering, Dalian Nationalities University, Dalian 116600 (China); School of Physics, Liaoning Normal University, Dalian 116023 (China); Yang, Qi; Niu, Jinhai; Bi, Zhenhua [School of Physics and Materials Engineering, Dalian Nationalities University, Dalian 116600 (China); Liu, Dongping, E-mail: dongping.liu@dlnu.edu.cn [School of Physics and Materials Engineering, Dalian Nationalities University, Dalian 116600 (China); Fujian Key Laboratory for Plasma and Magnetic Resonance, Department of Electronic Science, Aeronautics, School of Physics and Mechanical and Electrical Engineering, Xiamen University, Xiamen, Fujian 361005 (China)

    2013-10-01

    Polymer-like hydrocarbon films are irradiated with 100 keV He ion at the fluences of 1.0 × 10{sup 15}–1.0 × 10{sup 17} ions/cm{sup 2} or at the irradiation temperature ranging from 25 to 600 °C. Conductive atomic force microscopy (CAFM) has been used to evaluate the nanoscale electron conducting properties of these irradiated hydrocarbon films. Nanoscale and conducting defects have been formed in the hydrocarbon films irradiated at a relatively high ion fluence (1.0 × 10{sup 17} ions/cm{sup 2}) or an elevated sample temperature. Analysis indicates that He ion irradiation results in the evolution of polymer-like hydrocarbon into a dense structure containing a large fraction of sp{sup 2} carbon clusters. The sp{sup 2} carbon clusters formed in irradiated hydrocarbon films can contribute to the formation of filament-like conducting channels with a relatively high local field-enhancing factor. Measurements indicate that the growth of nanoscale defects due to He ion irradiation can result in the surface swelling of irradiated hydrocarbon films at a relatively high ion fluences or elevated temperature.

  7. Surface sterilization by low energy electron beams

    International Nuclear Information System (INIS)

    Sekiguchi, Masayuki; Tabei, Masae

    1989-01-01

    The germicidal effectiveness of low energy electron beams (175 KV) against bacterial cells was investigated. The dry spores of Bacillus pumilus ATCC 27142 and Bacillus globigii ATCC 9372 inoculated on carrier materials and irradiated by gamma rays showed the exponential type of survival curves whereas they showed sigmoidal ones when exposed to low energy electron beams. When similarly irradiated, the wet spores inoculated on membrane filter showed the same survival curves as the dry spores inoculated on carrier materials. The wet vegetative cells of Escherichia coli ATCC 25922 showed exponential curves when exposed to gamma and electron beam irradiation. Low energy electron beams in air showed little differences from nitrogen stream in their germicidal effectiveness against dry spores of B. pumilus. The D values of B. pumilus spores inoculated on metal plates decreased as the amounts of backscattering electrons from the plates increased. There was adequate correlation between the D value (linear region of survival curve), average D value (6D/6) and 1% survival dose and backscattering factor. Depth dose profile and backscatterig dose of low energy electron beams were measured by radiochromic dye film dosimeter (RCD). These figures were not always in accord with the observed germicidal effectiveness against B. pumilus spores because of varying thickness of RCD and spores inoculated on carrier material. The dry spores were very thin and this thinness was useful in evaluating the behavior of low energy electrons. (author)

  8. Application of pulsed multi-ion irradiations in radiation damage research: A stochastic cluster dynamics simulation study

    Science.gov (United States)

    Hoang, Tuan L.; Nazarov, Roman; Kang, Changwoo; Fan, Jiangyuan

    2018-07-01

    Under the multi-ion irradiation conditions present in accelerated material-testing facilities or fission/fusion nuclear reactors, the combined effects of atomic displacements with radiation products may induce complex synergies in the structural materials. However, limited access to multi-ion irradiation facilities and the lack of computational models capable of simulating the evolution of complex defects and their synergies make it difficult to understand the actual physical processes taking place in the materials under these extreme conditions. In this paper, we propose the application of pulsed single/dual-beam irradiation as replacements for the expensive steady triple-beam irradiation to study radiation damages in materials under multi-ion irradiation.

  9. Argon Ion Irradiation Effect on the Magnetic Properties of Fe-Al2O3 Nano Granular Film

    Directory of Open Access Journals (Sweden)

    Setyo Purwanto

    2014-10-01

    Full Text Available We studied the effect of Argon (Ar ion irradiation on Fe-Al2O3 nanogranular thin film. X-ray diffraction (XRD patterns show that the ion dose might promote the growth of the Fe2O3 phase from an amorphous phase to a crystalline phase. The magnetic and magnetoresistance properties were investigated using a vibrating sample magnetometer (VSM and a four point probe (FPP. The results suggest that percolation concentration occurred at the 0.55 Fe volume fraction and with a maximum magnetoresistance (MR ratio of 3%. The present MR ratio was lower than that of previous results, which might be related to the existence of the α-Fe2O3 phase promoted by Ar ion irradiation. CEMS spectra show ion irradiation induces changes from superparamagnetic characteristics to ferromagnetic ones, which indicates the spherical growth of Fe particles in the Al2O3 matrix.

  10. Precision shape modification of nanodevices with a low-energy electron beam

    Science.gov (United States)

    Zettl, Alex; Yuzvinsky, Thomas David; Fennimore, Adam

    2010-03-09

    Methods of shape modifying a nanodevice by contacting it with a low-energy focused electron beam are disclosed here. In one embodiment, a nanodevice may be permanently reformed to a different geometry through an application of a deforming force and a low-energy focused electron beam. With the addition of an assist gas, material may be removed from the nanodevice through application of the low-energy focused electron beam. The independent methods of shape modification and material removal may be used either individually or simultaneously. Precision cuts with accuracies as high as 10 nm may be achieved through the use of precision low-energy Scanning Electron Microscope scan beams. These methods may be used in an automated system to produce nanodevices of very precise dimensions. These methods may be used to produce nanodevices of carbon-based, silicon-based, or other compositions by varying the assist gas.

  11. A novel kerf-free wafering process combining stress-induced spalling and low energy hydrogen implantation

    Energy Technology Data Exchange (ETDEWEB)

    Pingault, Timothee; Pokam-Kuisseu, Pauline Sylvia; Ntsoenzok, Esidor [CEMTHI - CNRS, Site Cyclotron, 3 A rue de la Ferollerie, 45071 Orleans (France); Blondeau, Jean-Philippe [CEMTHI - CNRS, Site Cyclotron, 3 A rue de la Ferollerie, 45071 Orleans (France); Universite d' Orleans, Chateau de la Source, 45100 Orleans (France); Ulyashin, Alexander [SINTEF, Forskningsveien 1, 0314 Oslo (Norway); Labrim, Hicham; Belhorma, Bouchra [CNESTEN, B.P. 1382 R.P., 10001 Rabat (Morocco)

    2016-12-15

    In this work, we studied the potential use of low-energy hydrogen implantation as a guide for the stress-induced cleavage. Low-energy, high fluence hydrogen implantation in silicon leads, in the right stiffening conditions, to the detachment of a thin layer, around a few hundreds nm thick, of monocrystalline silicon. We implanted monocrystalline silicon wafers with low-energy hydrogen, and then glued them on a cheap metal layer. Upon cooling down, the stress induced by the stressor layers (hardened glue and metal) leads to the detachment of a thin silicon layer, which thickness is determined by the implantation energy. We were then able to clearly demonstrate that, as expected, hydrogen oversaturation layer is very efficient to guide the stress. Using such process, thin silicon layers of around 710 nm-thick were successfully detached from low-energy implanted silicon wafers. Such layers can be used for the growth of very good quality monocrystalline silicon of around 50 μm-thick or less. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  12. Screening of respiration deficiency mutants of yeasts (Saccharomyces cerevisiae) induced by ion irradiation and the mtDNA restriction analysis

    International Nuclear Information System (INIS)

    Mao Shuhong; Chinese Academy of Sciences, Beijing; Jin Genming; Wei Zengquan; Xie Hongmei; Ma Qiufeng; Gu Ying

    2005-01-01

    Screening of the respiration deficiency mutants of Saccharomyces cerevisiae induced by 5.19 MeV/u 22 Ne 5+ ion irradiation is reported in this paper. Some respiration deficiency mutants of white colony phenotype, in a condition of selective culture of TTC medium, were obtained. A new and simplified method based on mtDNA restriction analysis is described. The authors found that there are many obvious differences in mtDNAs between wild yeasts and the respiration deficiency mutants. The mechanism of obtaining the respiration deficiency mutants induced by heavy ion irradiation is briefly discussed. (authors)

  13. Low energy plasma observations at synchronous orbit

    International Nuclear Information System (INIS)

    Reasoner, D.L.; Lennartsson, W.

    1977-08-01

    The University of California at San Diego Auroral Particles Experiment on the ATS-6 Satellite in synchronous orbit has detected a low-energy plasma population which is separate and distinct from both the ring current and plasma sheet populations. These observations suggest that this plasma is the outer zone of the plasmasphere. During magnetically active periods, this low energy plasma is often observed flowing sunward. In the dusk sector, enhanced plasma flow is often observed for 1-2 hours prior to the onset of a substorm-associated particle injection. (author)

  14. Low-energy meson physics (chiral theory)

    International Nuclear Information System (INIS)

    Volkov, M.K.; Pervushin, V.N.

    1976-01-01

    A quantum chiral theory which allows to obtain low-energy expansions of various hadron processes without introducing arbitrary parameters into the theory with the exception of hadron masses and interaction constants is presented. A hypothesis about the dynamic symmetry of strong interactions is suggested. The interaction lagrangian is derived which satisfies conditions of the dynamic symmetry. Examples of the use of the quantum chiral theory for describing low-energy processes of meson interaction are given. It is noted that the results obtained reproduce the actual qualitative pattern of various physical processes and in most cases result in good quantitative agreement with experiments

  15. Ultra-shallow arsenic implant depth profiling using low-energy nitrogen beams

    International Nuclear Information System (INIS)

    Fearn, Sarah; Chater, Richard; McPhail, David

    2004-01-01

    Sputtering of silicon by low-energy nitrogen primary ion beams has been studied by a number of authors to characterize the altered layer, ripple formation and the sputtered yields of secondary ions [Surf. Sci. 424 (1999) 299; Appl. Phys. A: Mater. Sci. Process 53 (1991) 179; Appl. Phys. Lett. 73 (1998) 1287]. This study examines the application of low-energy nitrogen primary ion beams for the possible depth profiling of ultra-shallow arsenic implants into silicon. The emphasis of this work is on the matrix silicon signals in the pre-equilibrium surface region that are used for dose calibration. Problems with these aspects of the concentration depth profiling can give significant inconsistencies well outside the error limits of the quoted dose for the arsenic implantation as independently verified by CV profiling. This occurs during depth profiling with either oxygen primary ion beams (with and without oxygen leaks) or cesium primary ion beams

  16. Interstellar propagation of low energy cosmic rays

    International Nuclear Information System (INIS)

    Cesarsky, C.J.

    1975-01-01

    Wave particles interactions prevent low energy cosmic rays from propagating at velocities much faster than the Alfven velocity, reducing their range by a factor of order 50. Therefore, supernovae remnants cannot fill the neutral portions of the interstellar medium with 2 MeV cosmic rays [fr

  17. Virtual compton scattering at low energy

    International Nuclear Information System (INIS)

    Lhuillier, D.

    1997-09-01

    The work described in this PhD is a study of the Virtual Compton scattering (VCS) off the proton at low energy, below pion production threshold. Our experiment has been carried out at MAMI in the collaboration with the help of two high resolution spectrometers. Experimentally, the VCS process is the electroproduction of photons off a liquid hydrogen target. First results of data analysis including radiative corrections are presented and compared with low energy theorem prediction. VCS is an extension of the Real Compton Scattering. The virtuality of the incoming photon allows us to access new observables of the nucleon internal structure which are complementarity to the elastic form factors: the generalized polarizabilities (GP). They are function of the squared invariant mass of the virtual photo. The mass limit of these observables restore the usual electric and magnetic polarizabilities. Our experiment is the first measurement of the VCS process at a virtual photon mass equals 0.33 Ge V square. The experimental development presents the analysis method. The high precision needed in the absolute cross-section measurement required an accurate estimate of radiative corrections to the VCS. This new calculation, which has been performed in the dimensional regulation scheme, composes the theoretical part of this thesis. At low q', preliminary results agree with low energy theorem prediction. At higher q', substraction of low energy theorem contribution to extract GP is discussed. (author)

  18. Physics with low energy pions and muons

    International Nuclear Information System (INIS)

    Konijn, J.

    1981-01-01

    This document is a collection of texts used for a course of lectures given by the author at the Technical University of Delft (NL) in 1981. It is therefore a comprehensive, Dutch language, review article starting with the discovery of pions and muons, describing their properties and finally discussing their applications in low energy physics. (C.F.)

  19. Cooking exhaust systems for low energy dwellings

    NARCIS (Netherlands)

    Jacobs, P.; Borsboom, W.A.

    2017-01-01

    Especially in airtight low energy dwellings exhaust systems are of utmost importance as cooking can be a major source of PM2.5 exposure. Dwellings should be designed including facilities enabling extraction of at least 83 dm3/s (300 m3/h) directly to outside. Residents should be able to select an

  20. Low energy antiproton experiments - A review

    NARCIS (Netherlands)

    Jungmann, KP; Yamazaki, Y; Wada, M

    2005-01-01

    Low energy antiprotons offer excellent opportunities to study properties of fundamental forces and symmetries in nature. Experiments with them can contribute substantially to deepen our fundamental knowledge in atomic, nuclear and particle physics. Searches for new interactions can be carried out by

  1. The Simbol-X Low Energy Detector

    International Nuclear Information System (INIS)

    Lechner, Peter

    2009-01-01

    For the Low Energy Detector of Simbol-X a new type of active pixel sensor based on the integrated amplifier DEPFET has been developed. This concept combines large area, scalable pixel size, low noise, and ultra-fast readout. Flight representative prototypes have been processed with a performance matching the Simbol-X specifications and demonstrating the technology readiness.

  2. The Simbol-X Low Energy Detector

    Science.gov (United States)

    Lechner, Peter

    2009-05-01

    For the Low Energy Detector of Simbol-X a new type of active pixel sensor based on the integrated amplifier DEPFET has been developed. This concept combines large area, scalable pixel size, low noise, and ultra-fast readout. Flight representative prototypes have been processed with a performance matching the Simbol-X specifications and demonstrating the technology readiness.

  3. Low energy analysis techniques for CUORE

    Energy Technology Data Exchange (ETDEWEB)

    Alduino, C.; Avignone, F.T.; Chott, N.; Creswick, R.J.; Rosenfeld, C.; Wilson, J. [University of South Carolina, Department of Physics and Astronomy, Columbia, SC (United States); Alfonso, K.; Huang, H.Z.; Sakai, M.; Schmidt, J. [University of California, Department of Physics and Astronomy, Los Angeles, CA (United States); Artusa, D.R.; Rusconi, C. [University of South Carolina, Department of Physics and Astronomy, Columbia, SC (United States); INFN-Laboratori Nazionali del Gran Sasso, L' Aquila (Italy); Azzolini, O.; Camacho, A.; Keppel, G.; Palmieri, V.; Pira, C. [INFN-Laboratori Nazionali di Legnaro, Padua (Italy); Bari, G.; Deninno, M.M. [INFN-Sezione di Bologna, Bologna (Italy); Beeman, J.W. [Lawrence Berkeley National Laboratory, Materials Science Division, Berkeley, CA (United States); Bellini, F.; Cosmelli, C.; Ferroni, F.; Piperno, G. [Sapienza Universita di Roma, Dipartimento di Fisica, Rome (Italy); INFN-Sezione di Roma, Rome (Italy); Benato, G.; Singh, V. [University of California, Department of Physics, Berkeley, CA (United States); Bersani, A.; Caminata, A. [INFN-Sezione di Genova, Genoa (Italy); Biassoni, M.; Brofferio, C.; Capelli, S.; Carniti, P.; Cassina, L.; Chiesa, D.; Clemenza, M.; Faverzani, M.; Fiorini, E.; Gironi, L.; Gotti, C.; Maino, M.; Nastasi, M.; Nucciotti, A.; Pavan, M.; Pozzi, S.; Sisti, M.; Terranova, F.; Zanotti, L. [Universita di Milano-Bicocca, Dipartimento di Fisica, Milan (Italy); INFN-Sezione di Milano Bicocca, Milan (Italy); Branca, A.; Taffarello, L. [INFN-Sezione di Padova, Padua (Italy); Bucci, C.; Cappelli, L.; D' Addabbo, A.; Gorla, P.; Pattavina, L.; Pirro, S. [INFN-Laboratori Nazionali del Gran Sasso, L' Aquila (Italy); Canonica, L. [INFN-Laboratori Nazionali del Gran Sasso, L' Aquila (Italy); Massachusetts Institute of Technology, Cambridge, MA (United States); Cao, X.G.; Fang, D.Q.; Ma, Y.G.; Wang, H.W.; Zhang, G.Q. [Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai (China); Cardani, L.; Casali, N.; Dafinei, I.; Morganti, S.; Mosteiro, P.J.; Tomei, C.; Vignati, M. [INFN-Sezione di Roma, Rome (Italy); Copello, S.; Di Domizio, S.; Marini, L.; Pallavicini, M. [INFN-Sezione di Genova, Genoa (Italy); Universita di Genova, Dipartimento di Fisica, Genoa (Italy); Cremonesi, O.; Ferri, E.; Giachero, A.; Pessina, G.; Previtali, E. [INFN-Sezione di Milano Bicocca, Milan (Italy); Cushman, J.S.; Davis, C.J.; Heeger, K.M.; Lim, K.E.; Maruyama, R.H. [Yale University, Department of Physics, New Haven, CT (United States); D' Aguanno, D.; Pagliarone, C.E. [INFN-Laboratori Nazionali del Gran Sasso, L' Aquila (Italy); Universita degli Studi di Cassino e del Lazio Meridionale, Dipartimento di Ingegneria Civile e Meccanica, Cassino (Italy); Dell' Oro, S. [INFN-Laboratori Nazionali del Gran Sasso, L' Aquila (Italy); INFN-Gran Sasso Science Institute, L' Aquila (Italy); Di Vacri, M.L.; Santone, D. [INFN-Laboratori Nazionali del Gran Sasso, L' Aquila (Italy); Universita dell' Aquila, Dipartimento di Scienze Fisiche e Chimiche, L' Aquila (Italy); Drobizhev, A.; Hennings-Yeomans, R.; Kolomensky, Yu.G.; Wagaarachchi, S.L. [University of California, Department of Physics, Berkeley, CA (United States); Lawrence Berkeley National Laboratory, Nuclear Science Division, Berkeley, CA (United States); Franceschi, M.A.; Ligi, C.; Napolitano, T. [INFN-Laboratori Nazionali di Frascati, Rome (Italy); Freedman, S.J. [University of California, Department of Physics, Berkeley, CA (United States); Lawrence Berkeley National Laboratory, Nuclear Science Division, Berkeley, CA (United States); Fujikawa, B.K.; Mei, Y.; Schmidt, B.; Smith, A.R.; Welliver, B. [Lawrence Berkeley National Laboratory, Nuclear Science Division, Berkeley, CA (United States); Giuliani, A.; Novati, V. [Universite Paris-Saclay, CSNSM, Univ. Paris-Sud, CNRS/IN2P3, Orsay (France); Gladstone, L.; Leder, A.; Ouellet, J.L.; Winslow, L.A. [Massachusetts Institute of Technology, Cambridge, MA (United States); Gutierrez, T.D. [California Polytechnic State University, Physics Department, San Luis Obispo, CA (United States); Haller, E.E. [Lawrence Berkeley National Laboratory, Materials Science Division, Berkeley, CA (United States); University of California, Department of Materials Science and Engineering, Berkeley, CA (United States); Han, K. [Shanghai Jiao Tong University, Department of Physics and Astronomy, Shanghai (China); Hansen, E. [University of California, Department of Physics and Astronomy, Los Angeles, CA (United States); Massachusetts Institute of Technology, Cambridge, MA (United States); Kadel, R. [Lawrence Berkeley National Laboratory, Physics Division, Berkeley, CA (United States); Martinez, M. [Sapienza Universita di Roma, Dipartimento di Fisica, Rome (Italy); INFN-Sezione di Roma, Rome (Italy); Universidad de Zaragoza, Laboratorio de Fisica Nuclear y Astroparticulas, Saragossa (Spain); Moggi, N.; Zucchelli, S. [INFN-Sezione di Bologna, Bologna (Italy); Universita di Bologna - Alma Mater Studiorum, Dipartimento di Fisica e Astronomia, Bologna (IT); Nones, C. [CEA/Saclay, Service de Physique des Particules, Gif-sur-Yvette (FR); Norman, E.B.; Wang, B.S. [Lawrence Livermore National Laboratory, Livermore, CA (US); University of California, Department of Nuclear Engineering, Berkeley, CA (US); O' Donnell, T. [Virginia Polytechnic Institute and State University, Center for Neutrino Physics, Blacksburg, VA (US); Sangiorgio, S.; Scielzo, N.D. [Lawrence Livermore National Laboratory, Livermore, CA (US); Wise, T. [Yale University, Department of Physics, New Haven, CT (US); University of Wisconsin, Department of Physics, Madison, WI (US); Woodcraft, A. [University of Edinburgh, SUPA, Institute for Astronomy, Edinburgh (GB); Zimmermann, S. [Lawrence Berkeley National Laboratory, Engineering Division, Berkeley, CA (US)

    2017-12-15

    CUORE is a tonne-scale cryogenic detector operating at the Laboratori Nazionali del Gran Sasso (LNGS) that uses tellurium dioxide bolometers to search for neutrinoless double-beta decay of {sup 130}Te. CUORE is also suitable to search for low energy rare events such as solar axions or WIMP scattering, thanks to its ultra-low background and large target mass. However, to conduct such sensitive searches requires improving the energy threshold to 10 keV. In this paper, we describe the analysis techniques developed for the low energy analysis of CUORE-like detectors, using the data acquired from November 2013 to March 2015 by CUORE-0, a single-tower prototype designed to validate the assembly procedure and new cleaning techniques of CUORE. We explain the energy threshold optimization, continuous monitoring of the trigger efficiency, data and event selection, and energy calibration at low energies in detail. We also present the low energy background spectrum of CUORE-0 below 60 keV. Finally, we report the sensitivity of CUORE to WIMP annual modulation using the CUORE-0 energy threshold and background, as well as an estimate of the uncertainty on the nuclear quenching factor from nuclear recoils in CUORE-0. (orig.)

  4. Large solid angle detectors (low energy)

    International Nuclear Information System (INIS)

    L'Hote, D.

    1988-01-01

    This lecture deals with large solid angle detectors used in low energy experiments (mainly in Nuclear Physics). The reasons for using such detectors are discussed, and several basic principles of their design are presented. Finally, two examples of data analysis from such detectors are given [fr

  5. Heavy ion reactions at low energies

    International Nuclear Information System (INIS)

    Nemes, M.C.

    1985-01-01

    Some general features of the heavy ion reactions at low energies are presented. Some kinds of processes are studied, such as: elastic scattering, peripherical reactions, deep inelastic collisions and fusion. Both, theoretical and experimental perspectives on this field are discussed. (L.C.) [pt

  6. Studies in Low-Energy Nuclear Science

    Energy Technology Data Exchange (ETDEWEB)

    Carl R. Brune; Steven M. Grimes

    2010-01-13

    This report presents a summary of research projects in the area of low energy nuclear reactions and structure, carried out between March 1, 2006 and October 31, 2009 which were supported by U.S. DOE grant number DE-FG52-06NA26187.

  7. A theoretical study on the influence of the homogeneity of heavy-ion irradiation field on the survival fraction of cells

    International Nuclear Information System (INIS)

    Wen Xiaoqiong; Li Qiang; Zhou Guangming; Li Wenjian; Wang Jufang; Wei Zengquan

    2001-01-01

    In order to provide theoretical basis for the homogeneity request of heavy-ion irradiation field, the most important design parameter of the heavy-ion radiotherapy facility planned in IMP (Institute of Modern Physics), the influence of the homogeneity of heavy-ion irradiation field on the survival fraction of cells was investigated theoretically. A formula for survival fraction of cells irradiated by the un-uniform heavy-ion irradiation field was deduced to estimate the influence of the homogeneity of heavy-ion irradiation field on the survival fraction of cells. The results show that the survival fraction of cells irradiation by the un-uniform irradiation field is larger than that of cells irradiated by the uniform irradiation field, and the survival fraction of cells increases as the homogeneity of heavy-ion irradiation field decreasing. Practically, the heavy-ion irradiation field can be treated as uniform irradiation field when its homogeneity is better than 95%. According to these results, design request for the homogeneity of heavy-ion irradiation field should be better than 95%. The present results also show that the agreement of homogeneity of heavy-ion irradiation field must be checked while comparing the survival fraction curves obtained by different laboratory

  8. Nano-patterning of perpendicular magnetic recording media by low-energy implantation of chemically reactive ions

    International Nuclear Information System (INIS)

    Martin-Gonzalez, M.S.; Briones, F.; Garcia-Martin, J.M.; Montserrat, J.; Vila, L.; Faini, G.; Testa, A.M.; Fiorani, D.; Rohrmann, H.

    2010-01-01

    Magnetic nano-patterning of perpendicular hard disk media with perpendicular anisotropy, but preserving disk surface planarity, is presented here. Reactive ion implantation is used to locally modify the chemical composition (hence the magnetization and magnetic anisotropy) of the Co/Pd multilayer in irradiated areas. The procedure involves low energy, chemically reactive ion irradiation through a resist mask. Among N, P and As ions, P are shown to be most adequate to obtain optimum bit density and topography flatness for industrial Co/Pd multilayer media. The effect of this ion contributes to isolate perpendicular bits by destroying both anisotropy and magnetic exchange in the irradiated areas. Low ion fluences are effective due to the stabilization of atomic displacement levels by the chemical effect of covalent impurities.

  9. Morphology variation, composition alteration and microstructure changes in ion-irradiated 1060 aluminum alloy

    Science.gov (United States)

    Wan, Hao; Si, Naichao; Wang, Quan; Zhao, Zhenjiang

    2018-02-01

    Morphology variation, composition alteration and microstructure changes in 1060 aluminum irradiated with 50 keV helium ions were characterized by field emission scanning electron microscopy (FESEM) equipped with x-ray elemental scanning, 3D measuring laser microscope and transmission electron microscope (TEM). The results show that, helium ions irradiation induced surface damage and Si-rich aggregates in the surfaces of irradiated samples. Increasing the dose of irradiation, more damages and Si-rich aggregates would be produced. Besides, defects such as dislocations, dislocation loops and dislocation walls were the primary defects in the ion implanted layer. The forming of surface damages were related with preferentially sputtering of Al component. While irradiation-enhanced diffusion and irradiation-induced segregation resulted in the aggregation of impurity atoms. And the aggregation ability of impurity atoms were discussed based on the atomic radius, displacement energy, lattice binding energy and surface binding energy.

  10. Ceramic coatings by ion irradiation of polycarbosilanes and polysiloxanes. Pt. 1: Conversion mechanism

    International Nuclear Information System (INIS)

    Pivin, J.C.; Colombo, P.

    1997-01-01

    Changes of composition and structure of various types of polysiloxanes and polycarbosilanes when submitted to irradiation with ions of increasing mass, were analysed by means of several ion-beam analytical techniques, Raman and Fourier transform-infrared spectroscopes. Ion irradiations is as efficient as annealing at temperatures above 1000 o C for releasing hydrogen from these organic-inorganic polymers, and the radiolytic evolution of hydrogen is selective, whereas methane, silanes and carbon monoxide are also evolved during heat treatments. The kinetics of the polymer conversion into amorphous ceramics depends strongly on the linear density of energy transferred by ions to electron shells of target atoms, according to the ion energy per nucleon and to the nature of the side groups. Some of the carbon atoms segregate in clusters exhibiting a diamond-like hybridization state, in contrast to the clusters of turbostatic graphite formed in pyrolysed films. (Author)

  11. Influence of ion irradiation induced defects on mechanical properties of copper nanowires

    International Nuclear Information System (INIS)

    Li, Weina; Sun, Lixin; Xue, Jianming; Wang, Jianxiang; Duan, Huiling

    2013-01-01

    The mechanical properties of copper nanowires irradiated with energetic ions have been investigated by using molecular dynamics simulations. The Cu ions with energies ranging from 0.2 to 8.0 keV are used in our simulation, and both the elastic properties and yields under tension and compression are analyzed. The results show that two kinds of defects, namely point defects and stacking faults, appear in the irradiated nanowires depending on the incident ion energy. The Young modulus is significantly reduced by the ion irradiation, and the reduction magnitude depends on the vacancy number, which is determined by the ion energy. Moreover, the irradiated nanowires yield at a smaller strain, compared with the unirradiated nanowire. The mechanism for these changes are also discussed

  12. Ion irradiation-induced diffusion in bixbyite-fluorite related oxides: Dislocations and phase transformation

    Energy Technology Data Exchange (ETDEWEB)

    Rolly, Gaboriaud, E-mail: Rolly.gaboriaud@univ-poitiers.fr [Institut Pprime, CNRS-University of Poitiers, SP2MI-BP 30179, 86962 Chasseneuil-Futuroscope (France); Fabien, Paumier [Institut Pprime, CNRS-University of Poitiers, SP2MI-BP 30179, 86962 Chasseneuil-Futuroscope (France); Bertrand, Lacroix [CSIC – University of Sevilla, Avenida Américo Vespucio, 49, 41092 Sevilla (Spain)

    2014-05-01

    Ion-irradiation induced diffusion and the phase transformation of a bixbyite-fluorite related rare earth oxide thin films are studied. This work is focused on yttrium sesquioxide, Y{sub 2}O{sub 3}, thin films deposited on Si (1 0 0) substrates using the ion beam sputtering technique (IBS). As-deposited samples were annealed ant then irradiated at cryogenic temperature (80 K) with 260 keV Xe{sup 2+} at different fluences. The irradiated thin oxide films are characterized by X-ray diffraction. A cubic to monoclinic phase transformation was observed. Analysis of this phenomenon is done in terms of residual stresses. Stress measurements as a function of irradiation fluences were realised using the XRD-sin{sup 2}ψ method. Stress evolution and kinetic of the phase transformation are compared and leads to the role-played by the nucleation of point and extended defects.

  13. Ion Irradiation Experiments on the Murchison CM2 Carbonaceous Chondrite: Simulating Space Weathering of Primitive Asteroids

    Science.gov (United States)

    Keller, L. P.; Christoffersen, R.; Dukes, C. A.; Baragiola, R. A.; Rahman, Z.

    2015-01-01

    Remote sensing observations show that space weathering processes affect all airless bodies in the Solar System to some degree. Sample analyses and lab experiments provide insights into the chemical, spectroscopic and mineralogic effects of space weathering and aid in the interpretation of remote- sensing data. For example, analyses of particles returned from the S-type asteroid Itokawa by the Hayabusa mission revealed that space-weathering on that body was dominated by interactions with the solar wind acting on LL ordinary chondrite-like materials [1, 2]. Understanding and predicting how the surface regoliths of primitive carbonaceous asteroids respond to space weathering processes is important for future sample return missions (Hayabusa 2 and OSIRIS-REx) that are targeting objects of this type. Here, we report the results of our preliminary ion irradiation experiments on a hydrated carbonaceous chondrite with emphasis on microstructural and infrared spectral changes.

  14. Phase stability and microstructures of high entropy alloys ion irradiated to high doses

    Energy Technology Data Exchange (ETDEWEB)

    Xia, Songqin [State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing, 100083 (China); Gao, Michael C. [National Energy Technology Laboratory, 1450 Queen Ave SW, Albany, OR, 97321 (United States); AECOM, P.O. Box 1959, Albany, OR, 97321 (United States); Yang, Tengfei [State Key Laboratory of Nuclear Physics and Technology, Center for Applied Physics and Technology, Peking University, Beijing, 100871 (China); Liaw, Peter K. [Department of Materials Science and Engineering, The University of Tennessee, Knoxville, TN, 37996 (United States); Zhang, Yong, E-mail: drzhangy@ustb.edu.cn [State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing, 100083 (China)

    2016-11-15

    The microstructures of Al{sub x}CoCrFeNi (x = 0.1, 0.75 and 1.5 in molar ratio) high entropy alloys (HEAs) irradiated at room temperature with 3 MeV Au ions at the highest fluence of 105, 91, and 81 displacement per atom, respectively, were studied. Transmission electron microscopy (TEM) and high-resolution TEM (HRTEM) analyses show that the initial microstructures and phase composition of all three alloys are retained after ion irradiation and no phase decomposition is observed. Furthermore, it is demonstrated that the disordered face-centered cubic (FCC) and disordered body-centered cubic (BCC) phases show much less defect cluster formation and structural damage than the NiAl-type ordered B2 phase. This effect is explained by higher entropy of mixing, higher defect formation/migration energies, substantially lower thermal conductivity, and higher atomic level stress in the disordered phases.

  15. The accumulation of disorder, subject to saturation and sputter limitation, in ion irradiated solids

    International Nuclear Information System (INIS)

    Carter, G.; Webb, R.; Collins, R.

    1978-01-01

    The depth distribution of disorder and the depth integrated disorder produced by ion irradiation of solids is analysed theoretically as a function of increasing ion fluence when disorder saturation processes operate at all depths and the solid surface is continuously uniformly eroded by sputtering. The resulting defining equations are evaluated numerically for a Gaussian approximation to the disorder depth function with parameters appropriate to low, equal and high projectile:substrate mass ratio conditions, for several values of sputtering coefficient and effective atom displacement energy. It is shown that the form, if not the magnitude, of the integrated disorder/projectile fluence function is only weakly dependent upon these parameters. More meaningful comparison with depth resolved disorder functions is, however, possible and such a comparison is made for 100 keV Sb projectiles on a Si substrate. (author)

  16. Formation mechanism of SiC in C-Si system by ion irradiation

    International Nuclear Information System (INIS)

    Hishita, Shunichi; Aizawa, Takashi; Suehara, Shigeru; Haneda, Hajime

    2003-01-01

    The irradiation effects of 2 MeV He + , Ne + , and Ar + ions on the film structure of the C-Si system were investigated with RHEED and XPS. The ion dose dependence of the SiC formation was kinetically analyzed. The SiC formation at moderate temperature was achieved by 2 MeV ion irradiation when the thickness of the initial carbon films was appropriate. The evolution process of the SiC film thickness consisted of the 3 stages. The first stage was the steep increase of the SiC, and was governed by the inelastic collision. The second was the gentle increase of the SiC, and was governed by the diffusion. The last was the decrease of the SiC, and was caused by the sputtering. The formation mechanism of the SiC was discussed. (author)

  17. Reorientation of the crystalline planes in confined single crystal nickel nanorods induced by heavy ion irradiation

    International Nuclear Information System (INIS)

    Misra, Abha; Tyagi, Pawan K.; Rai, Padmnabh; Misra, D. S.; Ghatak, Jay; Satyam, P. V.; Avasthi, D. K.

    2006-01-01

    In a recent letter Tyagi et al. [Appl. Phys. Lett. 86, 253110 (2005)] have reported the special orientation of nickel planes inside multiwalled carbon nanotubes (MWCNTs) with respect to the tube axis. Heavy ion irradiation has been performed with 1.5 MeV Au 2+ and 100 MeV Au 7+ ions on these nickel filled MWCNTs at fluences ranging from 10 12 to 10 15 ions/cm 2 at room temperature. Ion-induced modifications have been studied using high-resolution transmission electron microscopy. The diffraction pattern and the lattice imaging showed the presence of ion-induced planar defects on the tube walls and completely amorphized encapsulated nickel nanorods. The results are discussed in terms of thermal spike model

  18. Optical waveguides in Nd:GdVO4 crystals fabricated by swift N3+ ion irradiation

    Science.gov (United States)

    Dong, Ningning; Yao, Yicun; Chen, Feng

    2012-12-01

    Optical planar waveguides have been manufactured in Nd:GdVO4 crystal by swift N3+ ions irradiation at fluence of 1.5 × 1014 ions/cm2. A typical "barrier"-style refractive index profile was formed and the light can be well confined in the waveguide region. The modal distribution of the guided modes obtained from numerical calculation has a good agreement with the experimental modal distribution. The measured photoluminescence spectra revealed that the fluorescence properties of the Nd3+ ions have been modified to some extent in the waveguide's volume. The propagation loss of the planar waveguide can decrease to lower than 1 dB/cm after adequate annealing.

  19. Phase formation in Zr/Fe multilayers during Kr ion irradiation

    International Nuclear Information System (INIS)

    Motta, A. T.

    1998-01-01

    A detailed study has been conducted of the effect of Kr ion irradiation on phase formation in Zr-Fe metallic multilayers, using the Intermediate Voltage Electron Microscopy (IVEM) at Argonne National Laboratory. Metallic multilayers were prepared with different overall compositions (near 50-50 and Fe-rich), and with different wavelengths (repetition thicknesses). These samples were irradiated with 300 keV Kr ions at various temperatures to investigate the final products, as well as the kinetics of phase formation. For the shorter wavelength samples, the final product was in all cases an amorphous Zr-Fe phase, in combination with Fe, while specially for the larger wavelength samples, in the Fe-rich samples the intermetallic compounds ZrFe 2 and Zr 3 Fe were formed in addition to the amorphous phase. The dose to full reaction decreases with temperature, and with wavelength in a manner consistent with a diffusion-controlled reaction

  20. Raman spectroscopic investigations of swift heavy ion irradiation effects in single-walled carbon nanotubes

    International Nuclear Information System (INIS)

    Olejniczak, A.; Skuratov, V.A.; Lukaszewicz, J.P.

    2013-01-01

    In this study, we report the results on swift heavy ion irradiation effects in single-walled carbon nanotubes (SWNTs). Buckypapers, prepared of CVD grown, SWNTs were irradiated at room temperature with 167 MeV Xe ions to fluences in the range of 6×10 11 - 6.5×10 13 cm -2 and investigated using Raman spectroscopy. We observed a rich set of features in the intermediate frequency mode region. Some of them, being defect-induced, resembled fairly well the phonon density of states (DOS) of nanocrystalline glassy carbon. Analysis of the RBM modes has shown that the broader metallic tubes are characterized by higher radiation stability than thinner semiconducting ones. (authors)

  1. Effect of microstructure on radiation induced segregation and depletion in ion irradiated SS316 steel

    International Nuclear Information System (INIS)

    Jin, Hyung Ha; Kwon, Sang Chul; Kwon, Jun Hyun

    2011-01-01

    Irradiation assisted stress corrosion cracking (IASCC), void swelling and irradiation induced hardening are caused by change of characteristics of material by neutron irradiation, stress state of material and environmental situation. It has been known that chemical compositions varies at grain boundary (GB) significantly with fluence level and the depletion of Cr element at GB has been considered as one of important factors causing material degradation, especially, IASCC in austenitic stainless steel. However, experimental results of IASCC under PWR condition were directly not connected with Cr depletion phenomenon by neutron irradiation. Because the mechanism of IASCC under PWR has not yet been clearly understood in spite of many energetic researches, fundamental researches about radiation induced segregation and depletion in irradiated austenitic stainless steels have been attracted again. In this work, an effect of residual microstructure on radiation induced segregation and depletion of alloy elements at GB was investigated in ion irradiated SS316 steel using transmission electron microscope (TEM) with energy dispersive spectrometer (EDS)

  2. Detwinning through migration of twin boundaries in nanotwinned Cu films under in situ ion irradiation.

    Science.gov (United States)

    Du, Jinlong; Wu, Zaoming; Fu, Engang; Liang, Yanxiang; Wang, Xingjun; Wang, Peipei; Yu, Kaiyuan; Ding, Xiangdong; Li, Meimei; Kirk, Marquis

    2018-01-01

    The mechanism of radiation-induced detwinning is different from that of deformation detwinning as the former is dominated by supersaturated radiation-induced defects while the latter is usually triggered by global stress. In situ Kr ion irradiation was performed to study the detwinning mechanism of nanotwinned Cu films with various twin thicknesses. Two types of incoherent twin boundaries (ITBs), so-called fixed ITBs and free ITBs, are characterized based on their structural features, and the difference in their migration behavior is investigated. It is observed that detwinning during radiation is attributed to the frequent migration of free ITBs, while the migration of fixed ITBs is absent. Statistics shows that the migration distance of free ITBs is thickness and dose dependent. Potential migration mechanisms are discussed.

  3. Effect of 120 MeV Ag{sup 9+} ion irradiation of YCOB single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Arun Kumar, R., E-mail: rarunpsgtech@yahoo.com [Crystal Growth Centre, Anna University, Chennai 600 025 (India); Department of Basic Sciences - Physics Division, PSG College of Technology, Coimbatore 641 004 (India); Dhanasekaran, R. [Crystal Growth Centre, Anna University, Chennai 600 025 (India)

    2012-09-15

    Single crystals of yttrium calcium oxy borate (YCOB) grown from boron-tri-oxide flux were subjected to swift heavy ion irradiation using silver Ag{sup 9+} ions from the 15 UD Pelletron facility at Inter University Accelerator Center, New Delhi. The crystals were irradiated at 1 Multiplication-Sign 10{sup 13}, 5 Multiplication-Sign 10{sup 13} and 1 Multiplication-Sign 10{sup 14} ions/cm{sup 2} fluences at room temperature and with 5 Multiplication-Sign 10{sup 13} ions/cm{sup 2} fluence at liquid nitrogen temperature. The pristine and the irradiated samples were characterized by glancing angle X-ray diffraction, UV-Vis-NIR and photoluminescence studies. From the characterization studies performed on the samples, it is inferred that the crystals irradiated at liquid nitrogen temperature had fewer defects compared to the crystals irradiated at room temperature and the defects increased when the ion fluence was increased at room temperature.

  4. Setup for in situ x-ray diffraction study of swift heavy ion irradiated materials.

    Science.gov (United States)

    Kulriya, P K; Singh, F; Tripathi, A; Ahuja, R; Kothari, A; Dutt, R N; Mishra, Y K; Kumar, Amit; Avasthi, D K

    2007-11-01

    An in situ x-ray diffraction (XRD) setup is designed and installed in the materials science beam line of the Pelletron accelerator at the Inter-University Accelerator Centre for in situ studies of phase change in swift heavy ion irradiated materials. A high vacuum chamber with suitable windows for incident and diffracted X-rays is integrated with the goniometer and the beamline. Indigenously made liquid nitrogen (LN2) temperature sample cooling unit is installed. The snapshots of growth of particles with fluence of 90 MeV Ni ions were recorded using in situ XRD experiment, illustrating the potential of this in situ facility. A thin film of C60 was used to test the sample cooling unit. It shows that the phase of the C60 film transforms from a cubic lattice (at room temperature) to a fcc lattice at around T=255 K.

  5. Characterization of the martensite phase formed during hydrogen ion irradiation in austenitic stainless steel

    Science.gov (United States)

    Jin, Hyung-Ha; Lim, Sangyeob; Kwon, Junhyun

    2017-10-01

    Microstructural changes in austenitic stainless steel caused by hydrogen ion irradiation were investigated using transmission electron microscopy (TEM). It has been confirmed that the irradiation induced the formation of martensite along the grain boundary; the martensite phase exhibited a crystal orientation relationship with the adjacent austenite phase. The results of this study also indicate that the concentration of Cr in the martensite phase is lower compared to that in the austenite matrix. The TEM results showed the development of asymmetric radiation-induced segregation (RIS) near the grain boundary, which leads to local changes in the chemical composition such as reduction of Cr near the grain boundary. The asymmetric RIS serves as a prerequisite for the formation of the martensite under hydrogen irradiation.

  6. Effect of irradiation temperature on microstructural changes in self-ion irradiated austenitic stainless steel

    Science.gov (United States)

    Jin, Hyung-Ha; Ko, Eunsol; Lim, Sangyeob; Kwon, Junhyun; Shin, Chansun

    2017-09-01

    We investigated the microstructural and hardness changes in austenitic stainless steel after Fe ion irradiation at 400, 300, and 200 °C using transmission electron microscopy (TEM) and nanoindentation. The size of the Frank loops increased and the density decreased with increasing irradiation temperature. Radiation-induced segregation (RIS) was detected across high-angle grain boundaries, and the degree of RIS increases with increasing irradiation temperature. Ni-Si clusters were observed using high-resolution TEM in the sample irradiated at 400 °C. The results of this work are compared with the literature data of self-ion and proton irradiation at comparable temperatures and damage levels on stainless steels with a similar material composition with this study. Despite the differences in dose rate, alloy composition and incident ion energy, the irradiation temperature dependence of RIS and the size and density of radiation defects followed the same trends, and were very comparable in magnitude.

  7. Setup for in situ x-ray diffraction study of swift heavy ion irradiated materials

    Science.gov (United States)

    Kulriya, P. K.; Singh, F.; Tripathi, A.; Ahuja, R.; Kothari, A.; Dutt, R. N.; Mishra, Y. K.; Kumar, Amit; Avasthi, D. K.

    2007-11-01

    An in situ x-ray diffraction (XRD) setup is designed and installed in the materials science beam line of the Pelletron accelerator at the Inter-University Accelerator Centre for in situ studies of phase change in swift heavy ion irradiated materials. A high vacuum chamber with suitable windows for incident and diffracted X-rays is integrated with the goniometer and the beamline. Indigenously made liquid nitrogen (LN2) temperature sample cooling unit is installed. The snapshots of growth of particles with fluence of 90MeV Ni ions were recorded using in situ XRD experiment, illustrating the potential of this in situ facility. A thin film of C60 was used to test the sample cooling unit. It shows that the phase of the C60 film transforms from a cubic lattice (at room temperature) to a fcc lattice at around T =255K.

  8. Molecular Dynamics Simulation of Damage to Coiled Carbon Nanotubes under C Ion Irradiation

    International Nuclear Information System (INIS)

    Zhou Bin; Zhang Wei; Gong Wen-Bin; Wang Song; Ren Cui-Lan; Wang Cheng-Bin; Zhu Zhi-Yuan; Huai Ping

    2013-01-01

    The stability of coiled carbon nanotubes under C ion irradiation is investigated by molecular dynamics simulations. The defect statistics shows that small curvature coiled carbon nanotubes have better radiation tolerance than normal straight carbon nanotubes. To understand the effect of the curvature on defect production, the threshold displacement energies for the upper and lower walls, as well as those for the side parts, are calculated. The results show that the lower wall has better radiation tolerance than the upper wall. For the upper wall, a small increase in the curvature of nanotube axis gives rise to an increase in the radiation tolerance and then a decrease with the curvature becomes larger. However, for the lower wall, as the curvature of the nanotube axis increases, the radiation tolerance increases as the bonds compressed slightly in our simulation

  9. Effect of ion irradiation on nanoscale TiS2 systems with suppressed Titania phase

    International Nuclear Information System (INIS)

    Hazarika, Saurabh J; Mohanta, Dambarudhar; Tripathi, A; Kanjilal, D.

    2016-01-01

    Titanium disulfide (TiS 2 ), being an important of the transition metal dichalcogenide, (TMDC) family, has drawn numerous interest owing to exhibition of tunable band gap as well as high carrier mobility. In this work, we highlight preparation of TiS 2 nanopowder with minimal TiO 2 content and also demonstrate modified properties upon swift heavy ion irradiation on TiS 2 nanoparticles dispersed PVA films. Different properties of the irradiated samples have been characterized through diffraction, microscopic and spectroscopic techniques. As a result of irradiation, due to agglomeration of particles, the grain size is found to increase. We could also observe a red shift after irradiation with increasing fluence, leading to easy flow of electron from valence to conduction band, which shows that conduction of electrons is more in case of irradiated films compared to the pristine one and thus there may be a possibility of using the irradiated samples in various optoelectronic devices. (paper)

  10. Annealing of ion irradiated high TC Josephson junctions studied by numerical simulations

    International Nuclear Information System (INIS)

    Sirena, M.; Matzen, S.; Bergeal, N.; Lesueur, J.; Faini, G.; Bernard, R.; Briatico, J.; Crete, D. G.

    2009-01-01

    Recently, annealing of ion irradiated high T c Josephson iunctions (JJs) has been studied experimentally in the perspective of improving their reproducibility. Here we present numerical simulations based on random walk and Monte Carlo calculations of the evolution of JJ characteristics such as the transition temperature T c ' and its spread ΔT c ' , and compare them with experimental results on junctions irradiated with 100 and 150 keV oxygen ions, and annealed at low temperatures (below 80 deg. C). We have successfully used a vacancy-interstitial annihilation mechanism to describe the evolution of the T c ' and the homogeneity of a JJ array, analyzing the evolution of the defects density mean value and its distribution width. The annealing first increases the spread in T c ' for short annealing times due to the stochastic nature of the process, but then tends to reduce it for longer times, which is interesting for technological applications

  11. Annealing effect on the reproducibility of Josephson Junctions made by ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Sirena, M; Matzen, S; Bergeal, N; Lesueur, J [Laboratoire Photons Et Matiere, CNRS, ESPCI, 10 Rue Vauquelin 75231 Paris (France) (France); Faini, G [Laboratoire de Photonique et Nanostructures, Route de Nozay, 91460 Marcoussis (France) (France); Bernard, R; Briatico, J; Crete, D [UMR-CNRS/THALES, Route D128, 91767 Palaiseau (France) (France)], E-mail: martin.sirena@espci.fr

    2008-02-01

    We have studied the annealing effects on the transport properties of High Tc Josephson Junctions (JJ) made by ion irradiation. Several JJ were measured for different annealing times and the experimental data were compared to numerical simulations. We have successfully used a vacancy-interstitial annihilation mechanism to describe the evolution of the JJ coupling temperature (T{sub J}) and the homogeneity of a JJ array, related to the evolution of the defects density mean value and its distribution width. For sufficient long annealing times (t > 600 min), {delta}T{sub J} was significatively reduced. This result appears to be very encouraging for future applications where the spread in JJ characteristics has to be as low as possible.

  12. Annealing effect on the reproducibility of Josephson Junctions made by ion irradiation

    International Nuclear Information System (INIS)

    Sirena, M; Matzen, S; Bergeal, N; Lesueur, J; Faini, G; Bernard, R; Briatico, J; Crete, D

    2008-01-01

    We have studied the annealing effects on the transport properties of High Tc Josephson Junctions (JJ) made by ion irradiation. Several JJ were measured for different annealing times and the experimental data were compared to numerical simulations. We have successfully used a vacancy-interstitial annihilation mechanism to describe the evolution of the JJ coupling temperature (T J ) and the homogeneity of a JJ array, related to the evolution of the defects density mean value and its distribution width. For sufficient long annealing times (t > 600 min), ΔT J was significatively reduced. This result appears to be very encouraging for future applications where the spread in JJ characteristics has to be as low as possible

  13. Optical waveguides in LiTaO3 crystals fabricated by swift C5+ ion irradiation

    International Nuclear Information System (INIS)

    Liu, Guiyuan; He, Ruiyun; Akhmadaliev, Shavkat; Vázquez de Aldana, Javier R.; Zhou, Shengqiang; Chen, Feng

    2014-01-01

    We report on the optical waveguides, in both planar and ridge configurations, fabricated in LiTaO 3 crystal by using carbon (C 5+ ) ions irradiation at energy of 15 MeV. The planar waveguide was produced by direct irradiation of swift C 5+ ions, whilst the ridge waveguides were manufactured by using femtosecond laser ablation of the planar layer. The reconstructed refractive index profile of the planar waveguide has showed a barrier-shaped distribution, and the near-field waveguide mode intensity distribution was in good agreement with the calculated modal profile. After thermal annealing at 260 °C in air, the propagation losses of both the planar and ridge waveguides were reduced to 10 dB/cm

  14. Impurities-Si interstitials interaction in Si doped with B or Ga during ion irradiation

    International Nuclear Information System (INIS)

    Romano, L; Piro, A M; Grimaldi, M G; Rimini, E

    2005-01-01

    Substitutional impurities (B, Ga) in Si experienced an off-lattice displacement during ion-irradiation using a H + or He + beam at room temperature in random incidence. Samples were prepared by solid phase epitaxy (SPE) of pre-amorphized Si subsequently implanted with B and Ga at a concentration of about 1 x10 20 at.cm -3 confined in a 300 nm thick surface region. The lattice location of impurities was performed by a channelling technique along different axes ( , ) using the 11 B(p,α) 8 Be reaction and standard RBS for B and Ga, respectively. The normalized channelling yield χ of the impurity signal increases with the ion fluence, indicating a progressive off-lattice displacement of the dopant during irradiation in random incidence, until it saturates at χ F I ) generated by the impinging beam in the doped region

  15. Positron lifetime and Doppler broadening study of defects created by swift ion irradiation in sapphire

    International Nuclear Information System (INIS)

    Liszkay, L.; Gordo, P.M.; Lima, A. de; Havancsak, K.; Skuratov, V.A.; Kajcsos, Z.

    2004-01-01

    Swift ions create a defect profile penetrating deep into a solid compared to the sampling range of typical slow positron beams, which may consequently study a homogeneous zone of defected materials. To investigate the defect population created by energetic ions, we studied α-Al 2 O 3 single crystals irradiated with swift Kr ions by using conventional and pulsed positron beams. Samples irradiated with krypton at 245 MeV energy in a wide fluence range show nearly saturated positron trapping above 5 x 10 10 ions cm -2 fluence, indicating the creation of monovacancies in high concentration. At 1 x 10 14 ions cm -2 irradiation a 500 ps long lifetime component appears, showing the creation of larger voids. This threshold corresponds well to the onset of the overlap of the damage zones after Bi ion irradiation along the ion trajectories observed with microscopic methods. (orig.)

  16. Trapping of hydrogen isotopes in radiation defects formed in tungsten by neutron and ion irradiations

    Energy Technology Data Exchange (ETDEWEB)

    Hatano, Y., E-mail: hatano@ctg.u-toyama.ac.jp [Hydrogen Isotope Research Center, University of Toyama, Toyama 930-8555 (Japan); Shimada, M. [Fusion Safety Program, Idaho National Laboratory, Idaho Falls, ID 83415 (United States); Alimov, V.Kh.; Shi, J.; Hara, M.; Nozaki, T. [Hydrogen Isotope Research Center, University of Toyama, Toyama 930-8555 (Japan); Oya, Y.; Kobayashi, M.; Okuno, K. [Faculty of Science, Shizuoka University, Shizuoka 422-8529 (Japan); Oda, T. [Department of Nuclear Engineering and Management, The University of Tokyo, Tokyo 113-8656 (Japan); Cao, G. [Department of Engineering Physics, The University of Wisconsin, Madison, WI 53706 (United States); Yoshida, N.; Futagami, N. [Research Institute for Applied Mechanics, Kyushu University, Kasuga 816-8580 (Japan); Sugiyama, K.; Roth, J.; Tyburska-Püschel, B.; Dorner, J. [Max-Planck-Institut für Plasmaphysik, EURATOM Association, D-85748 Garching (Germany); Takagi, I. [Department of Nuclear Engineering, Kyoto University, Kyoto 606-8501 (Japan); Hatakeyama, M.; Kurishita, H. [Institute for Materials Research, Tohoku University, Oarai 311-1313 (Japan); and others

    2013-07-15

    Retention of D in neutron-irradiated W and desorption were examined after plasma exposure at 773 K. Deuterium was accumulated at a relatively high concentration up to a large depth of 50–100 μm due to the trapping effects of defects uniformly induced in the bulk. A significant D release in a vacuum continued to temperatures ⩾1173 K because of the small effective diffusion coefficient and the long diffusion distance. Exposure of ion-irradiated W to D{sub 2} gas showed a clear correlation between concentrations of trapped and solute D as determined by the trapping–detrapping equilibrium. These observations indicated that the accumulation of tritium in high concentrations is possible even at high temperatures if the concentration of solute tritium is high, and baking at moderate temperatures is ineffective for removal of tritium deeply penetrating into the bulk. Nevertheless, clear enhancement of D release was observed under the presence of solute H.

  17. Study of point defect clustering in electron and ion irradiated zirconium alloys

    International Nuclear Information System (INIS)

    Hellio, C.; Boulanger, L.

    1986-09-01

    Dislocation loops created by 500 keV Zr + ions and 1 MeV electrons in zirconium have a/3 type Burgers vectors, and in ion irradiated samples, loops lie preferentially on planes close to (1010). From in-situ observations of loop growth under 1 MeV electron irradiation in zirconium and dilute Zr (Nb,O) alloys, a strong increase of the vacancy migration energy with oxygen concentration was observed, from 0.72 eV for pure zirconium to 1.7 eV for Zr and Zr-1% Nb doped with 1800 ppm weight oxygen, indicating large trapping of vacancies by O single interstitials or clusters

  18. Ion irradiation and thermal cycling tests of TiC coatings

    International Nuclear Information System (INIS)

    Yamanaka, S.; Ohara, H.; Son, P.; Miyake, M.

    1984-01-01

    Ion irradiation of TiC coatings prepared by diffusion annealing was performed with 20-40 keV He + ions for different doses at room temperature. The polished TiCsub(0.99) coatings irradiated with 40 keV He + ions showed the surface damage and erosion due to blistering and exfoliation above a dose of 1.8x10 17 ions/cm 2 , whereas no change in the surface morphology could be detected for the as-prepared coatings up to a dose of 1.4x10 18 ions/cm 2 . The results suggested that surface erosion due to blistering can be effectively reduced on the rough surface of the as-prepared TiC coating. The average blister diameter in the polished TiCsub(0.99) coating increased with increasing projectile energy. For the 40 keV He + ion irradiation of the polished TiCsub(0.5) coatings, general features in blisters were similar to those observed for the TiCsub(0.99) coatings, but the critical dose for blistering shifted to a higher value in comparison with the polished TiCsub(0.99) coating. Thermal cycling between 500 and 1200 0 C caused serious surface damage for the TiCsub(0.99) coating irradiated with 40 keV He + ions below the critical dose for blistering, while the coating with surface damage due to blistering showed no significant change in the surface topography after thermal cycling. (orig.)

  19. Microstructural evolution of CANDU spacer material Inconel X-750 under in situ ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, He Ken [Department of Mechanical and Materials Engineering, Queen’s University Kingston, Ontario K7L 3N6 (Canada); Yao, Zhongwen, E-mail: yaoz@me.queensu.ca [Department of Mechanical and Materials Engineering, Queen’s University Kingston, Ontario K7L 3N6 (Canada); Judge, Colin; Griffiths, Malcolm [Deformation Technology Branch, AECL, Chalk River Laboratories Chalk River, Ontario K0J 1J0 (Canada)

    2013-11-15

    Highlights: •γ′ Disordered at low dose. •Cascade induced SFTs were observed in alloy X-750. •No cavities were found from mono heavy ions irradiated samples. -- Abstract: Work on Inconel® X-750 spacers removed from CANDU® reactors has shown that they become embrittled and there is development of many small cavities within the metal matrix and along grain boundaries. In order to emulate the neutron irradiation induced microstructural changes, heavy ion irradiations (1 MeV Kr{sup 2+} ions) were performed while observing the damage evolution using an intermediate voltage electron microscope (IVEM) operating at 200 kV. The irradiations were carried out at various temperatures 60–400 °C. The principal strengthening phase, γ′, was disordered at low doses (∼0.06 dpa) during the irradiation. M{sub 23}C{sub 6} carbides were found to be stable up to 5.4 dpa. Lattice defects consisted mostly of stacking fault tetrahedras (SFTs), 1/2<1 1 0> perfect loops and small 1/3<1 1 1> faulted Frank loops. The ratio of SFT number density to loop number density for each irradiation condition was found to be neither temperature nor dose dependent. Under the operation of the ion beam the SFT production was very rapid, with no evidence for further growth once formed, indicating that they probably formed as a result of cascade collapse in a single cascade. The number density of the defects was found to saturate at low dose (∼0.68 dpa). No cavities were observed regardless of the irradiation temperature between 60 °C and 400 °C for doses up to 5.4 dpa. In contrast, cavities have been observed after neutron irradiation in the same material at similar doses and temperatures indicating that helium, produce during neutron irradiation, may be essential for the nucleation and growth of cavities.

  20. Synthesis of Fe–C{sub 60} complex by ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Minezaki, Hidekazu, E-mail: dn1000012@toyo.jp [Graduate School of Engineering, Toyo University, 2100 Kujirai, Kawagoe, Saitama 350-8585 (Japan); Oshima, Kosuke [Graduate School of Engineering, Toyo University, 2100 Kujirai, Kawagoe, Saitama 350-8585 (Japan); Uchida, Takashi; Mizuki, Toru [Bio-Nano Electronics Research Centre, Toyo University, 2100 Kujirai, Kawagoe, Saitama 350-8585 (Japan); Racz, Richard [Institute of Nuclear Research (ATOMKI), H-4026, Debrecen, Bem tér 18/C (Hungary); Muramatsu, Masayuki [National Institute of Radiological Sciences (NIRS), 4-9-1 Anagawa, Inage-ku, Chiba-shi, Chiba 263-8555 (Japan); Asaji, Toyohisa [Oshima National College of Maritime Technology, 1091-1 Komatsu Suou Oshima City, Oshima, Yamaguchi 742-2193 (Japan); Kitagawa, Atsushi [National Institute of Radiological Sciences (NIRS), 4-9-1 Anagawa, Inage-ku, Chiba-shi, Chiba 263-8555 (Japan); Kato, Yushi [Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita-shi, Osaka 565-0871 (Japan); Biri, Sandor [Institute of Nuclear Research (ATOMKI), H-4026, Debrecen, Bem tér 18/C (Hungary); Yoshida, Yoshikazu [Graduate School of Engineering, Toyo University, 2100 Kujirai, Kawagoe, Saitama 350-8585 (Japan); Bio-Nano Electronics Research Centre, Toyo University, 2100 Kujirai, Kawagoe, Saitama 350-8585 (Japan)

    2013-09-01

    Highlights: •The Fe{sup +} beam was irradiated to the C{sub 60} thin films. •The Fe{sup +}-irradiated C{sub 60} thin films were analyzed by LDI-TOF-MS and by HPLC. •The peak with mass/charge of 776 was observed in the Fe{sup +}-irradiated C{sub 60} thin film. •We could synthesize the Fe–C{sub 60} complex as a new material. -- Abstract: In order to synthesize the Fe@C{sub 60} complex, iron ion beam irradiated to C{sub 60} thin films. The energy of the irradiated iron ions was controlled from 50 eV to 250 eV. The dose of that was controlled from 6.67 × 10{sup 12} to 6.67 × 10{sup 14} ions/cm{sup 2}. By the analysis of the surface of the iron ion irradiated C{sub 60} thin films using laser desorption/ionization time-of-flight mass spectrometry, we could confirm the peak with mass/charge of 776. The mass/charge of 776 corresponds to Fe + C{sub 60}. We obtained the maximum intensity of the peak with mass/charge of 776 under the irradiation iron ion energy and the dose were 50 eV and 3.30 × 10{sup 13} ions/cm{sup 2}, respectively. Then, the separation of the material with mass of 776 was performed by using high performance liquid chromatography. We could separate the Fe + C{sub 60} from the iron ion irradiated C{sub 60} thin film. As a result, we could synthesize the Fe + C{sub 60} complex as a new material.

  1. Effect of heavy ion irradiation on thermodynamically equilibrium Zr-Excel alloy

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Hongbing [Department of Mechanical and Materials Engineering, Queen' s University, Kingston, ON, K7L 3N6 (Canada); Liang, Jianlie [Department of Mechanical and Materials Engineering, Queen' s University, Kingston, ON, K7L 3N6 (Canada); College of Science, Guangxi University for Nationalities, 188, East Da Xue Rd., Nanning, Guangxi, 530006 P.R.C (China); Yao, Zhongwen, E-mail: yaoz@queensu.ca [Department of Mechanical and Materials Engineering, Queen' s University, Kingston, ON, K7L 3N6 (Canada); Kirk, Mark A. [Material Science Division Argonne National Laboratory, Argonne, IL 60439 (United States); Daymond, Mark R., E-mail: mark.daymond@queensu.ca [Department of Mechanical and Materials Engineering, Queen' s University, Kingston, ON, K7L 3N6 (Canada)

    2017-05-15

    The thermodynamically equilibrium state was achieved in a Zr-Sn-Nb-Mo alloy by long-term annealing at an intermediate temperature. The fcc intermetallic Zr(Mo, Nb){sub 2} enriched with Fe was observed at the equilibrium state. In-situ 1 MeV Kr{sup 2+} heavy ion irradiation was performed in a TEM to study the stability of the intermetallic particles under irradiation and the effects of the intermetallic particle on the evolution of type dislocation loops at different temperatures from 80 to 550 °C. Chemi-STEM elemental maps were made at the same particles before and after irradiation up to 10 dpa. It was found that no elemental redistribution occurs at 200 °C and below. Selective depletion of Fe was observed from some precipitates under irradiation at higher temperatures. No change in the morphology of particles and no evidence showing a crystalline to amorphous transformation were observed at all irradiation temperatures. The formation of type dislocation loops was observed under irradiation at 80 and 200 °C, but not at 450 and 550 °C. The loops were non-uniformly distributed; a localized high density of type dislocation loops were observed near the second phase particles; we suggest that loop nucleation is favored as a result of the stress induced by the particles, rather than by elemental redistribution. The stability of the second phase particles and the formation of the type loops under heavy ion irradiation are discussed.

  2. Mutation effects of C{sup 2+} ion irradiation on the greasy Nitzschia sp

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Y.N., E-mail: ynyangbuaa@gmail.com [School of Chemistry and Environment, Beihang University, 37th Xueyuan Road, Haidian District, P.O. Box 106, 100191 Beijing (China); Liu, C.L.; Wang, Y.K. [School of Chemistry and Environment, Beihang University, 37th Xueyuan Road, Haidian District, P.O. Box 106, 100191 Beijing (China); Xue, J.M. [State Key Lab of Nuclear Physics and Nuclear Technology, Peking University, 100084 Beijing (China)

    2013-11-15

    Highlights: • The optimal conditions of C{sup 2+} ion irradiation on Nitzschia sp. were discussed. • Get the “saddle type” survival curve. • One mutant whose lipid content improved significantly was selected. • The C{sup 2+} ion irradiation didn’t change the algae's morphology and growth rate. - Abstract: Screening and nurturing algae with high productivity, high lipid content and strong stress resistance are very important in algae industry. In order to increase the lipid content, the Nitzschia sp. was irradiated with a 3 MeV C{sup 2+} beam. The sample pretreatment method was optimized to obtain the best mutagenic condition and the survival ratio curve. The positive mutants with a significant improvement in lipid content were screened and their C{sup 2+} mutagenic effects were analyzed by comparing the greasiness and growth characteristics with the wild type algae. Results showed that when the Nitzschia sp. was cultivated in nutritious medium containing 10% glycerol solution, and dried on the filter for 5 min after centrifugation, the realization of the microalgae heavy ion mutagenesis could be done. The survival ratio curve caused by C{sup 2+} irradiation was proved to be “saddle-shaped”. A positive mutant was screened among 20 survivals after irradiation, the average lipid content of the mutation increased by 9.8% than the wild type after 4 generations. But the growth rate of the screened mutation didn’t change after the heavy ion implantation compared to the wild type algae.

  3. Surface amorphization in Al2O3 induced by swift heavy ion irradiation

    International Nuclear Information System (INIS)

    Okubo, N.; Ishikawa, N.; Sataka, M.; Jitsukawa, S.

    2013-01-01

    Microstructure in single crystalline Al 2 O 3 developed during irradiation by swift heavy ions has been investigated. The specimens were irradiated by Xe ions with energies from 70 to 160 MeV at ambient temperature. The fluences were in the range from 1.0 × 10 13 to 1.0 × 10 15 ions/cm 2 . After irradiations, X-ray diffractometry (XRD) measurements and cross sectional transmission electron microscope (TEM) observations were conducted. The XRD results indicate that in the initial stage of amorphization in single crystalline Al 2 O 3 , high-density S e causes the formation of new planes and disordering. The new distorted lattice planes formed in the early stage of irradiation around the fluence of 5.0 × 10 13 ions/cm 2 for single crystalline Al 2 O 3 irradiated with 160 MeV-Xe ions. Energy dependence on structural modification was also examined in single crystalline Al 2 O 3 irradiated by swift heavy ions. The XRD results indicate that the swift heavy ion irradiation causes the lattice expansion and the structural modification leading to amorphization progresses above the energy around 100 MeV in this XRD study. The TEM observations demonstrated that amorphization was induced in surface region in single crystalline Al 2 O 3 irradiated by swift heavy ions above the fluence expected from the results of XRD. Obvious boundary was observed in the cross sectional TEM images. The crystal structure of surface region above the boundary was identified to be amorphous and deeper region to be single crystal. The threshold fluence of amorphization was found to be around 1.0 × 10 14 ions/cm 2 in the case over 80 MeV swift heavy ion irradiation and the fluence did not depend on the crystal structures

  4. Surface amorphization in Al2O3 induced by swift heavy ion irradiation

    Science.gov (United States)

    Okubo, N.; Ishikawa, N.; Sataka, M.; Jitsukawa, S.

    2013-11-01

    Microstructure in single crystalline Al2O3 developed during irradiation by swift heavy ions has been investigated. The specimens were irradiated by Xe ions with energies from 70 to 160 MeV at ambient temperature. The fluences were in the range from 1.0 × 1013 to 1.0 × 1015 ions/cm2. After irradiations, X-ray diffractometry (XRD) measurements and cross sectional transmission electron microscope (TEM) observations were conducted. The XRD results indicate that in the initial stage of amorphization in single crystalline Al2O3, high-density Se causes the formation of new planes and disordering. The new distorted lattice planes formed in the early stage of irradiation around the fluence of 5.0 × 1013 ions/cm2 for single crystalline Al2O3 irradiated with 160 MeV-Xe ions. Energy dependence on structural modification was also examined in single crystalline Al2O3 irradiated by swift heavy ions. The XRD results indicate that the swift heavy ion irradiation causes the lattice expansion and the structural modification leading to amorphization progresses above the energy around 100 MeV in this XRD study. The TEM observations demonstrated that amorphization was induced in surface region in single crystalline Al2O3 irradiated by swift heavy ions above the fluence expected from the results of XRD. Obvious boundary was observed in the cross sectional TEM images. The crystal structure of surface region above the boundary was identified to be amorphous and deeper region to be single crystal. The threshold fluence of amorphization was found to be around 1.0 × 1014 ions/cm2 in the case over 80 MeV swift heavy ion irradiation and the fluence did not depend on the crystal structures.

  5. Self-ion Irradiation Damage of F/M and ODS steels

    International Nuclear Information System (INIS)

    Kang, Suk Hoon; Chun, Young-Bum; Noh, Sanghoon; Jang, Jinsung; Kim, Tae Kyu

    2014-01-01

    Oxide dispersion strengthened (ODS) ferritic steels are potential high-temperature materials that are stabilized by dispersed particles at elevated temperatures. These dispersed particles improve the tensile strength and creep rupture strength, they are expected to increase the operation temperature up to approximately 650 .deg. C and also enhance the energy efficiency of the fusion reactor. Some reports described that the nano-clusters are strongly resistant to coarsening by annealing up to 1000 .deg. C, and nanoclusters do not change after ion irradiation up to 0.7 dpa at 300 .deg. C. ODS steels will be inevitably exposed to neutron irradiation condition; the irradiation damages, creep and swelling are always great concern. The dispersed oxide particles are believed to determine the performance of the steel, even the radiation resistance. In this study, F/M and ODS model alloys of Korea Atomic Energy Research Institute (KAERI) were irradiated by Fe 3+ self-ion to emulate the neutron irradiation effect. In this study, Fe 3+ self-ion irradiation is used as means of introducing radiation damage in F/M steel and ODS steel. The ion accelerator named DuET (in Kyoto University, Japan) was used for irradiation of Fe 3+ ion by 6.4 MeV at 300 .deg. C. The maximum damage rate in F/M and ODS steels were estimated roughly 6 dpa. After radiation, point or line defects were dominantly observed in F/M steel, on the other hands, small circular cavities were typically observed in ODS steel. Nanoindentation is a useful tool to determine the irradiationinduced hardness change in the damage layer of ionirradiated iron base alloys

  6. Microstructure and mechanical properties of FeCrAl alloys under heavy ion irradiations

    Science.gov (United States)

    Aydogan, E.; Weaver, J. S.; Maloy, S. A.; El-Atwani, O.; Wang, Y. Q.; Mara, N. A.

    2018-05-01

    FeCrAl ferritic alloys are excellent cladding candidates for accident tolerant fuel systems due to their high resistance to oxidation as a result of formation of a protective Al2O3 scale at high temperatures in steam. In this study, we report the irradiation response of the 10Cr and 13Cr FeCrAl cladding tubes under Fe2+ ion irradiation up to ∼16 dpa at 300 °C. Dislocation loop size, density and characteristics were determined using both two-beam bright field transmission electron microscopy and on-zone scanning transmission electron microscopy techniques. 10Cr (C06M2) tube has a lower dislocation density, larger grain size and a slightly weaker texture compared to the 13Cr (C36M3) tube before irradiation. After irradiation to 0.7 dpa and 16 dpa, the fraction of type sessile dislocations decreases with increasing Cr amount in the alloys. It has been found that there is neither void formation nor α‧ precipitation as a result of ion irradiations in either alloy. Therefore, dislocation loops were determined to be the only irradiation induced defects contributing to the hardening. Nanoindentation testing before the irradiation revealed that the average nanohardness of the C36M3 tube is higher than that of the C06M2 tube. The average nanohardness of irradiated tube samples saturated at 1.6-2.0 GPa hardening for both tubes between ∼3.4 dpa and ∼16 dpa. The hardening calculated based on transmission electron microscopy was found to be consistent with nanohardness measurements.

  7. Intergranular stress corrosion cracking of ion irradiated 304L stainless steel in PWR environment

    International Nuclear Information System (INIS)

    Gupta, Jyoti

    2016-01-01

    IASCC is irradiation - assisted enhancement of intergranular stress corrosion cracking susceptibility of austenitic stainless steel. It is a complex degrading phenomenon which can have a significant influence on maintenance time and cost of PWRs' core internals and hence, is an issue of concern. Recent studies have proposed using ion irradiation (to be specific, proton irradiation) as an alternative of neutron irradiation to improve the current understanding of the mechanism. The objective of this study was to investigate the cracking susceptibility of irradiated SA 304L and factors contributing to cracking, using two different ion irradiations; iron and proton irradiations. Both resulted in generation of point defects in the microstructure and thereby causing hardening of the SA 304L. Material (unirradiated and iron irradiated) showed no susceptibility to intergranular cracking on subjection to SSRT with a strain rate of 5 * 10 -8 s -1 up to 4 % plastic strain in inert environment. But, irradiation (iron and proton) was found to increase intergranular cracking severity of material on subjection to SSRT in simulated PWR primary water environment at 340 C. Correlation between the cracking susceptibility and degree of localization was studied. Impact of iron irradiation on bulk oxidation of SA 304L was studied as well by conducting an oxidation test for 360 h in simulated PWR environment at 340 C. The findings of this study indicate that the intergranular cracking of 304L stainless steel in PWR environment can be studied using Fe irradiation despite its small penetration depth in material. Furthermore, it has been shown that the cracking was similar in both iron and proton irradiated samples despite different degrees of localization. Lastly, on establishing iron irradiation as a successful tool, it was used to study the impact of surface finish and strain paths on intergranular cracking susceptibility of the material. (author) [fr

  8. Critical current densities and flux creep rate in Co-doped BaFe2As2 with columnar defects introduced by heavy-Ion irradiation

    International Nuclear Information System (INIS)

    Nakajima, Y.; Tsuchiya, Y.; Taen, T.; Yagyuda, H.; Tamegai, T.; Okayasu, S.; Sasase, M.; Kitamura, H.; Murakami, T.

    2010-01-01

    We report the formation of columnar defects in Co-doped BaFe 2 As 2 single crystals with different heavy-ion irradiations. The formation of columnar defects by 200 MeV Au ion irradiation is confirmed by transmission electron microscopy and their density is about 40% of the irradiation dose. Magneto-optical imaging and bulk magnetization measurements reveal that the critical current density J c is enhanced in the 200 MeV Au and 800 MeV Xe ion irradiated samples while J c is unchanged in the 200 MeV Ni ion irradiated sample. We also find that vortex creep rates are strongly suppressed by the columnar defects. We compare the effect of heavy-ion irradiation into Co-doped BaFe 2 As 2 and cuprate superconductors.

  9. Utilizing Neon Ion Microscope for GaSb nanopatterning studies: Nanostructure formation and comparison with low energy nanopatterning

    International Nuclear Information System (INIS)

    El-Atwani, Osman; Huynh, Chuong; Norris, Scott

    2016-01-01

    Graphical abstract: - Highlights: • Carl Zeiss-neon ion microscope was used to irradiated GaSb surfaces with 5 keV neon. • In-situ imaging using helium beam and ex-situ imaging using an electron beam were performed. • Differences in imaging output between the helium and the electron beam were observed. • Transition occurred in the nanostructure type and formation mechanism as the energy is changed from 2 to 5 keV. • Collision cascade simulations suggested a transition toward bulk-driven mechanisms. - Abstract: Low energy irradiation of GaSb surfaces has been shown to lead to nanopillar formation. Being performed ex-situ, controlling the parameters of the ion beam for controlled nanopattern formation is challenging. While mainly utilized for imaging and cutting purposes, the development of multibeam (helium/neon) ion microscopes has opened the path towards the use of these microscopes for in-situ ion irradiation and nanopatterning studies. In this study, in-situ irradiation (neon ions)/imaging (helium ions) of GaSb surfaces is performed using Carl Zeiss-neon ion microscope at low energies (5 and 10 keV). Imaging with helium ions, nanodots were shown to form at particular fluences after which are smoothed. Ex-situ imaging with SEM showed nanopore formation of size controlled by the ion energy and fluence. Compared to lower energy ex-situ neon ion irradiation at similar fluxes, where nanopillars are formed, the results demonstrated a transition in the nanostructure type and formation mechanism as the energy is changed from 2 to 5 keV. Simulations show an increase in the ballistic diffusion and a decrease in the strength of phase separation as a function of ion energy in agreement with the suppression of nanopillar formation at higher energies. Collision cascade simulations suggest a transition toward bulk-driven mechanisms.

  10. Utilizing Neon Ion Microscope for GaSb nanopatterning studies: Nanostructure formation and comparison with low energy nanopatterning

    Energy Technology Data Exchange (ETDEWEB)

    El-Atwani, Osman, E-mail: oelatwan25@gmail.com [School of Nuclear Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Huynh, Chuong [Carl Zeiss Microscopy, LLC, One Corporation Way, Peabody, MA 01960 (United States); Norris, Scott [Department of Mathematics, Southern Methodist University, Dallas, TX 75275 (United States)

    2016-05-01

    Graphical abstract: - Highlights: • Carl Zeiss-neon ion microscope was used to irradiated GaSb surfaces with 5 keV neon. • In-situ imaging using helium beam and ex-situ imaging using an electron beam were performed. • Differences in imaging output between the helium and the electron beam were observed. • Transition occurred in the nanostructure type and formation mechanism as the energy is changed from 2 to 5 keV. • Collision cascade simulations suggested a transition toward bulk-driven mechanisms. - Abstract: Low energy irradiation of GaSb surfaces has been shown to lead to nanopillar formation. Being performed ex-situ, controlling the parameters of the ion beam for controlled nanopattern formation is challenging. While mainly utilized for imaging and cutting purposes, the development of multibeam (helium/neon) ion microscopes has opened the path towards the use of these microscopes for in-situ ion irradiation and nanopatterning studies. In this study, in-situ irradiation (neon ions)/imaging (helium ions) of GaSb surfaces is performed using Carl Zeiss-neon ion microscope at low energies (5 and 10 keV). Imaging with helium ions, nanodots were shown to form at particular fluences after which are smoothed. Ex-situ imaging with SEM showed nanopore formation of size controlled by the ion energy and fluence. Compared to lower energy ex-situ neon ion irradiation at similar fluxes, where nanopillars are formed, the results demonstrated a transition in the nanostructure type and formation mechanism as the energy is changed from 2 to 5 keV. Simulations show an increase in the ballistic diffusion and a decrease in the strength of phase separation as a function of ion energy in agreement with the suppression of nanopillar formation at higher energies. Collision cascade simulations suggest a transition toward bulk-driven mechanisms.

  11. Fluctuation Induced Conductivity Studies of 100 MeV Oxygen Ion Irradiated Pb Doped Bi-2223 Superconductors

    NARCIS (Netherlands)

    Banerjee, Tamalika; Kumar, Ravi; Kanjilal, D.; Ramasamy, S.

    2000-01-01

    We report on 100 MeV oxygen ion irradiation in Pb doped Bi-2223 superconductors. Resistivity measurements reveal that both grains as well as the grain boundaries are affected by such irradiation. An analysis of the excess conductivity has been made within the framework of Aslamazov-Larkin (AL) and

  12. Photon strength and the low-energy enhancement

    Energy Technology Data Exchange (ETDEWEB)

    Wiedeking, M. [iThemba LABS, P.O. Box 722, Somerset West 7129 (South Africa); Bernstein, L. A.; Bleuel, D. L.; Burke, J. T.; Hatarik, R.; Lesher, S. R.; Scielzo, N. D. [Physical and Life Sciences Directorate, Lawrence Livermore National Laboratory, Livermore, California 94551 (United States); Krtička, M. [Faculty of Mathematics and Physics, Charles University, V Holešovickách 2, Prague 8 (Czech Republic); Allmond, J. M. [Department of Physics, University of Richmond, Virginia 23173 (United States); Basunia, M. S.; Fallon, P.; Firestone, R. B.; Lake, P. T.; Lee, I-Y.; Paschalis, S.; Petri, M.; Phair, L. [Nuclear Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Goldblum, B. L. [Department of Nuclear Engineering, University of California, Berkeley, California 94720 (United States)

    2014-08-14

    Several measurements in medium mass nuclei have reported a low-energy enhancement in the photon strength function. Although, much effort has been invested in unraveling the mysteries of this effect, its physical origin is still not conclusively understood. Here, a completely model-independent experimental approach to investigate the existence of this enhancement is presented. The experiment was designed to study statistical feeding from the quasi-continuum (below the neutron separation energy) to individual low-lying discrete levels in {sup 95}Mo produced in the (d, p) reaction. A key aspect to successfully study gamma decay from the region of high-level density is the detection and extraction of correlated particle-gamma-gamma events which was accomplished using an array of Clover HPGe detectors and large area annular silicon detectors. The entrance channel excitation energy into the residual nucleus produced in the reaction was inferred from the detected proton energies in the silicon detectors. Gating on gamma-transitions originating from low-lying discrete levels specifies the state fed by statistical gamma-rays. Any particle-gamma-gamma event in combination with specific energy sum requirements ensures a clean and unambiguous determination of the initial and final state of the observed gamma rays. With these requirements the statistical feeding to individual discrete levels is extracted on an event-by-event basis. The results are presented and compared to {sup 95}Mo photon strength function data measured at the University of Oslo.

  13. Low energy intense electron beams with extra-low energy spread

    International Nuclear Information System (INIS)

    Aleksandrov, A.V.; Calabrese, R.; Ciullo, G.; Dikansky, N.S.; Guidi, V.; Kot, N.C.; Kudelainen, V.I.; Lamanna, G.; Lebedev, V.A.; Logachov, P.V.; Tecchio, L.; Yang, B.

    1994-01-01

    Maximum achievable intensity for low energy electron beams is a feature that is not very often compatible with low energy spread. We show that a proper choice of the source and the acceleration optics allows one to match them together. In this scheme, a GaAs photocathode excited by a single-mode infrared laser and adiabatic acceleration in fully magnetised optics enables the production of a low-energy-spread electron beam with relatively high intensity. The technological problems associated with the method are discussed together with its limitations. (orig.)

  14. Microstructural evolution of nanochannel CrN films under ion irradiation at elevated temperature and post-irradiation annealing

    Science.gov (United States)

    Tang, Jun; Hong, Mengqing; Wang, Yongqiang; Qin, Wenjing; Ren, Feng; Dong, Lan; Wang, Hui; Hu, Lulu; Cai, Guangxu; Jiang, Changzhong

    2018-03-01

    High-performance radiation tolerance materials are crucial for the success of future advanced nuclear reactors. In this paper, we present a further investigation that the "vein-like" nanochannel films can enhance radiation tolerance under ion irradiation at high temperature and post-irradiation annealing. The chromium nitride (CrN) nanochannel films with different nanochannel densities and the compact CrN film are chosen as a model system for these studies. Microstructural evolution of these films were investigated using Transmission Electron Microscopy (TEM), Scanning Electron Microscopy (SEM), Elastic Recoil Detection (ERD) and Grazing Incidence X-ray Diffraction (GIXRD). Under the high fluence He+ ion irradiation at 500 °C, small He bubbles with low bubble densities are observed in the irradiated nanochannel CrN films, while the aligned large He bubbles, blistering and texture reconstruction are found in the irradiated compact CrN film. For the heavy Ar2+ ion irradiation at 500 °C, the microstructure of the nanochannel CrN RT film is more stable than that of the compact CrN film due to the effective releasing of defects via the nanochannel structure. Under the He+ ion irradiation and subsequent annealing, compared with the compact film, the nanochannel films have excellent performance for the suppression of He bubble growth and possess the strong microstructural stability. Basing on the analysis on the sizes and number densities of bubbles as well as the concentrations of He retained in the nanochannel CrN films and the compact CrN film under different experimental conditions, potential mechanism for the enhanced radiation tolerance are discussed. Nanochannels play a crucial role on the release of He/defects under ion irradiation. We conclude that the tailored "vein-like" nanochannel structure may be used as advanced radiation tolerance materials for future nuclear reactors.

  15. Experimentation with low-energy positron beams

    International Nuclear Information System (INIS)

    Mills, A.P. Jr.

    1983-01-01

    The capability of studying the interactions of positrons with surfaces has recently been exploited by using ultra-high-vacuum techniques. The result has been a new understanding of how positrons interact with surfaces and because of this we are now able to make much stronger fluxes of slow positrons. The higher beam strengths in turn are opening up new possibilities for experimentation on surfaces and solids and for studying the atomic physics of positronium and positron-molecule scattering at low energies. The lectures are intended to review some of the history of this subject and to outline the present state of our knowledge of experimentation with low-energy positron beams. (orig./TW)

  16. Natural gas in low energy house Zittau

    International Nuclear Information System (INIS)

    Maertens, L.; Koschack, A.

    1999-01-01

    This paper describes a low-energy house in Zittau, Germany. The house consists of two parts A and B. Part A is heated by means of gas boilers and condensed boilers, while part B is solar heated. Energy for heating and warming of tap water is an important part of the primary energy consumption in Germany. Therefore, one way of reducing the CO2 emissions is to reduce the heat losses of buildings through outer facades and air ventilation, to use regenerative energy sources, to use fuels with low CO2 emissivity like natural gas, and to install efficient heating- and hot water preparation systems. The low-energy house in Zittau is used for energy research

  17. LINAC4 low energy beam measurements

    CERN Document Server

    Hein, L M; Lallement, J B; Lombardi, A M; Midttun, O; Posocco, P; Scrivens, R

    2012-01-01

    Linac4 is a 160 MeV normal-conducting linear accelerator for negative Hydrogen ions (H−), which will replace the 50 MeV proton Linac (Linac2) as linear injector for the CERN accelerators. The low energy part, comprising a 45 keV Low Energy Beam Transport system (LEBT), a 3 MeV Radiofrequency Quadrupole (RFQ) and a Medium Energy Beam Transport (MEBT) is being assembled in a dedicated test stand for pre-commissioning with a proton beam. During 2011 extensive measurements were done after the source and after the LEBT with the aim of preparing the RFQ commissioning and validating the simulation tools, indispensable for future source upgrades. The measurements have been thoroughly simulated with a multi-particle code, including 2D magnetic field maps, error studies, steering studies and the generation of beam distribution from measurements. Emittance, acceptance and transmission measurements will be presented and compared to the results of the simulations.

  18. Enhancement mechanisms of low energy nuclear reactions

    Energy Technology Data Exchange (ETDEWEB)

    Gareev, F. A.; Zhidkova, I.E.; Ratis, Yu.L. [Joint Institute for Nuclear Research, JINR, 6 Joliot Curie Street, Dubna, Moscow Region 141980 (Russian Federation)

    2006-07-01

    The full review of Russian low energy nuclear reactors is represented. We have concluded that transmutation of nuclei at low energies, LENR, is possible in the framework of the modern physical theory - excitation and ionization of atoms and universal resonance synchronization principle are responsible for it. Investigation of this phenomenon requires knowledge of different branches of science: nuclear and atomic physics, chemistry and electrochemistry, condensed matter and solid state physics. The results of this research field can provide a new source of energy, substances and technologies. The puzzle of poor reproducibility of experimental data is due to the fact that LENR occurs in open systems and it is extremely sensitive to parameters of external fields and systems. Classical reproducibility principle should be reconsidered for LENR experiments. Poor reproducibility and unexplained results do not means that the experiment is wrong.

  19. Enhancement mechanisms of low energy nuclear reactions

    International Nuclear Information System (INIS)

    Gareev, F. A.; Zhidkova, I.E.; Ratis, Yu.L.

    2006-01-01

    The full review of Russian low energy nuclear reactors is represented. We have concluded that transmutation of nuclei at low energies, LENR, is possible in the framework of the modern physical theory - excitation and ionization of atoms and universal resonance synchronization principle are responsible for it. Investigation of this phenomenon requires knowledge of different branches of science: nuclear and atomic physics, chemistry and electrochemistry, condensed matter and solid state physics. The results of this research field can provide a new source of energy, substances and technologies. The puzzle of poor reproducibility of experimental data is due to the fact that LENR occurs in open systems and it is extremely sensitive to parameters of external fields and systems. Classical reproducibility principle should be reconsidered for LENR experiments. Poor reproducibility and unexplained results do not means that the experiment is wrong

  20. A Low-Energy Ring Lattice Design

    International Nuclear Information System (INIS)

    Cai, Yunhai

    2002-01-01

    The PEP-N project at SLAC [1] consists of a Very Low-Energy small electron Ring (VLER) that will collide with the low-energy 3.1 GeV positron beam (LER) of PEP-II, producing center-of-mass energies between the 1.1 GeV and the J/ψ. The beams will collide head-on and will be separated in the detector magnetic field which is part of the Interaction Region [2]. The IP β functions were chosen such as to optimize both luminosity and beam-beam tune shifts, while keeping the LER tune shifts small. This paper describes the lattice design of the VLER for the ''baseline'' at 500 MeV

  1. Food irradiation by low energy electrons

    International Nuclear Information System (INIS)

    Bird, J.R.

    1985-01-01

    For some special cases, the use of low energy electrons has advantages over the use of gamma-rays or higher energy electrons for the direct irradiation of food. These advantages arise from details of the interaction processes which are responsible for the production of physical, chemical and biological effects. Factors involved include depth of penetration, dose distribution, irradiation geometry, the possible production of radioactivity and costs

  2. Architectural Quality of Low Energy Houses

    DEFF Research Database (Denmark)

    Lauring, Michael; Marsh, Rob

    2008-01-01

    This paper expounds a systematic vocabulary concerning architectural quality in houses in general and low energy houses in particular. The vocabulary consists of nine themes. Inside each theme, examples are given of how to achieve both architectural quality and good environmental performance....... The purpose is to provide a useful tool for communication and argumentation in order to further integrated design of houses with good architecture and good environmental performance. ...

  3. Physics with ultra-low energy antiprotons

    International Nuclear Information System (INIS)

    Holtkamp, D.B.; Holzscheiter, M.H.; Hughes, R.J.

    1989-01-01

    The experimental observation that all forms of matter experience the same gravitational acceleration is embodied in the weak equivalence principle of gravitational physics. However no experiment has tested this principle for particles of antimatter such as the antiproton or the antihydrogen atom. Clearly the question of whether antimatter is in compliance with weak equivalence is a fundamental experimental issue, which can best be addressed at an ultra-low energy antiproton facility. This paper addresses the issue. 20 refs

  4. PHYSICS WITH ULTRA-LOW ENERGY ANTIPROTONS

    Energy Technology Data Exchange (ETDEWEB)

    M. HOLZSCHEITER

    2001-02-01

    In this report the author describes the current status of the antiproton deceleration (AD) facility at CERN, and highlights the physics program with ultra-low energy antiproton at this installation. He also comments on future possibilities provided higher intensity antiproton beams become available at Fermilab, and review possibilities for initial experiments using direct degrading of high energy antiprotons in material has been developed and proven at CERN.

  5. Workshop on low energy neutrino physics

    International Nuclear Information System (INIS)

    2009-01-01

    The main topics of the workshop are: the determination of the neutrino mixing angle theta-13, the experiments concerning the monitoring of reactors based on the measurement of neutrino spectra, solar neutrinos, supernovae neutrinos, geo-neutrinos, neutrino properties, neutrinoless double beta decay and future low energy neutrino detectors. This document gathers together the program of the workshop, the slides of the presentations, some abstracts and some posters

  6. The low-energy experiment on EXOSAT

    International Nuclear Information System (INIS)

    Bleeker, J.A.M.

    1975-01-01

    The present concept of the Low-Energy-Experiment (LEE) for EXOSAT was proposed by a collaboration of the X-ray astronomy groups at Mullard Space Science Laboratories at University College London, the Space Research Laboratory at Utrecht and the Cosmic Ray Working Group at Leiden. In the following paragraphs the major characteristics of the instrumentation and the expected scientific return will be discussed. The summary comprises both the approved baseline configuration and the proposed option of a small imaging telescope

  7. FLSR - The Frankfurt low energy storage ring

    International Nuclear Information System (INIS)

    Stiebing, K.E.; Alexandrov, V.; Doerner, R.; Enz, S.; Kazarinov, N.Yu.; Kruppi, T.; Schempp, A.; Schmidt Boecking, H.; Voelp, M.; Ziel, P.; Dworak, M.; Dilfer, W.

    2010-01-01

    An electrostatic storage ring for low-energy ions with a design energy of 50 keV is presently being set up at the Institut fuer Kernphysik der Johann Wolfgang Goethe-Universitaet Frankfurt am Main, Germany (IKF). This new device will provide a basis for new experiments on the dynamics of ionic and molecular collisions, as well as for high precision and time resolved laser spectroscopy. In this article, the design parameters of this instrument are reported.

  8. Low-energy scattering data for oxygen

    International Nuclear Information System (INIS)

    Kopecky, S.; Plompen, A.J.M.

    2014-01-01

    A survey of literature data of the scattering lengths of oxygen is performed, and these values are compared to low-energy precise total cross-section data. To check the quality of the data and the correctness of the relation between coherent scattering lengths and low-energy total cross-sections the situation is examined first for carbon. A value and uncertainty for the coherent scattering length of oxygen is recommended for use in future evaluations of 16 O. This coherent scattering length is fully consistent with the high-precision, low-energy total cross-section data. The consistency requires the use of a larger uncertainty than claimed in the most accurate cross-section papers. This larger uncertainty is nevertheless very small and well within the requirements of applications of this cross-section. The recommended value is b c ( 16 O) = 5.816±0.015 fm and the associated total cross-section for the neutron-energy range 0.5 to 2 000 eV is 3.765±0.025 b. The stated uncertainties are one standard deviation total uncertainty. (authors)

  9. Targeting Low-Energy Ballistic Lunar Transfers

    Science.gov (United States)

    Parker, Jeffrey S.

    2010-01-01

    Numerous low-energy ballistic transfers exist between the Earth and Moon that require less fuel than conventional transfers, but require three or more months of transfer time. An entirely ballistic lunar transfer departs the Earth from a particular declination at some time in order to arrive at the Moon at a given time along a desirable approach. Maneuvers may be added to the trajectory in order to adjust the Earth departure to meet mission requirements. In this paper, we characterize the (Delta)V cost required to adjust a low-energy ballistic lunar transfer such that a spacecraft may depart the Earth at a desirable declination, e.g., 28.5(white bullet), on a designated date. This study identifies the optimal locations to place one or two maneuvers along a transfer to minimize the (Delta)V cost of the transfer. One practical application of this study is to characterize the launch period for a mission that aims to launch from a particular launch site, such as Cape Canaveral, Florida, and arrive at a particular orbit at the Moon on a given date using a three-month low-energy transfer.

  10. The Low-Energy Neutrino Factory

    International Nuclear Information System (INIS)

    Brass, Alan; Geer, Steve; Ellis, Malcolm; Mena, Olga; Pascoli, Silvia

    2008-01-01

    To date most studies of Neutrino Factories have focused on facilities where the energy of the muon in the storage ring has been in the range of 25-50 GeV. In this paper we present a concept for a Low-Energy (∼ 4 GeV) neutrino factory. For baselines of O(1000 km), the rich oscillation pattern at low neutrino interaction energy (0.5 - ∼3 GeV) provides the unique performance of this facility with regard to its sensitivity to CP violation and the determination of the neutrino mass hierarchy. A unique neutrino detector is needed, however, in order to exploit this oscillation pattern. We will describe the basic accelerator facility, demonstrate the methodology of the analysis and give an estimate on how well the Low-Energy neutrino factory can measure θ 13 , CP violation and the mass hierarchy. We will also describe the detector concept that is used, show a preliminary analysis regarding its performance and indicate what R and D is still needed. Finally we will show how the Low-Energy neutrino factory could be a step towards an energy frontier muon collider.

  11. Magnetic and topographical modifications of amorphous Co–Fe thin films induced by high energy Ag{sup 7+} ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Pookat, G.; Hysen, T. [Department of Physics, Cochin University of Science and Technology, Cochin 682022, Kerala (India); Al-Harthi, S.H.; Al-Omari, I.A. [Department of Physics, Sultan Qaboos University, Muscat, P.O. Box 36, Code 123 (Oman); Lisha, R. [Department of Physics, Cochin University of Science and Technology, Cochin 682022, Kerala (India); Avasthi, D.K. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067 (India); Anantharaman, M.R., E-mail: mra@gmail.com [Department of Physics, Cochin University of Science and Technology, Cochin 682022, Kerala (India)

    2013-09-01

    We have investigated the effects of swift heavy ion irradiation on thermally evaporated 44 nm thick, amorphous Co{sub 77}Fe{sub 23} thin films on silicon substrates using 100 MeV Ag{sup 7+} ions fluences of 1 × 10{sup 11} ions/cm{sup 2}, 1 × 10{sup 12} ions/cm{sup 2}, 1 × 10{sup 13} ions/cm{sup 2}, and 3 × 10{sup 13} ions/cm{sup 2}. The structural modifications upon swift heavy irradiation were investigated using glancing angle X-ray diffraction. The surface morphological evolution of thin film with irradiation was studied using Atomic Force Microscopy. Power spectral density analysis was used to correlate the roughness variation with structural modifications investigated using X-ray diffraction. Magnetic measurements were carried out using vibrating sample magnetometry and the observed variation in coercivity of the irradiated films is explained on the basis of stress relaxation. Magnetic force microscopy images are subjected to analysis using the scanning probe image processor software. These results are in agreement with the results obtained using vibrating sample magnetometry. The magnetic and structural properties are correlated.

  12. Comparison of the effects of photon versus carbon ion irradiation when combined with chemotherapy in vitro

    International Nuclear Information System (INIS)

    Schlaich, Fabian; Brons, Stephan; Haberer, Thomas; Debus, Jürgen; Combs, Stephanie E; Weber, Klaus-Josef

    2013-01-01

    Characterization of combination effects of chemotherapy drugs with carbon ions in comparison to photons in vitro. The human colon adenocarcinoma cell line WiDr was tested for combinations with camptothecin, cisplatin, gemcitabine and paclitaxel. In addition three other human tumour cell lines (A549: lung, LN-229: glioblastoma, PANC-1: pancreas) were tested for the combination with camptothecin. Cells were irradiated with photon doses of 2, 4, 6 and 8 Gy or carbon ion doses of 0.5, 1, 2 and 3 Gy. Cell survival was assessed using the clonogenic growth assay. Treatment dependent changes in cell cycle distribution (up to 12 hours post-treatment) were measured by FACS analysis after propidium-iodide staining. Apoptosis was monitored for up to 36 hours post-treatment by Nicoletti-assay (with qualitative verification using DAPI staining). All cell lines exhibited the well-known increase of killing efficacy per unit dose of carbon ion exposure, with relative biological efficiencies at 10% survival (RBE 10 ) ranging from 2.3 to 3.7 for the different cell lines. In combination with chemotherapy additive toxicity was the prevailing effect. Only in combination with gemcitabine or cisplatin (WiDr) or camptothecin (all cell lines) the photon sensitivity was slightly enhanced, whereas purely independent toxicities were found with the carbon ion irradiation, in all cases. Radiation-induced cell cycle changes displayed the generally observed dose-dependent G2-arrest with little effect on S-phase fraction for all cell lines for photons and for carbon ions. Only paclitaxel showed a significant induction of apoptosis in WiDr cell line but independent of the used radiation quality. Combined effects of different chemotherapeutics with photons or with carbon ions do neither display qualitative nor substantial quantitative differences. Small radiosensitizing effects, when observed with photons are decreased with carbon ions. The data support the idea that a radiochemotherapy with common

  13. Late Effects of Heavy Ion Irradiation on Ex Vivo Osteoblastogenesis and Cancellous Bone Microarchitecture

    Science.gov (United States)

    Tran, Luan Hoang; Alwood, Joshua; Kumar, Akhilesh; Limoli, C. L.; Globus, Ruth

    2012-01-01

    Prolonged spaceflight causes degeneration of skeletal tissue with incomplete recovery even after return to Earth. We hypothesize that heavy ion irradiation, a component of Galactic Cosmic Radiation, damages osteoblast progenitors and may contribute to bone loss during long duration space travel beyond the protection of the Earth's magnetosphere. Male, 16 week old C57BL6/J mice were exposed to high LET (56 Fe, 600MeV) radiation using either low (5 or 10cGy) or high (50 or 200cGy) doses at the NASA Space Radiation Lab and were euthanized 3 - 4, 7, or 35 days later. Bone structure was quantified by microcomputed tomography (6.8 micron pixel size) and marrow cell redox assessed using membrane permeable, free radical sensitive fluorogenic dyes. To assess osteoblastogenesis, adherent marrow cells were cultured ex vivo, then mineralized nodule formation quantified by imaging and gene expression analyzed by RT PCR. Interestingly, 3 - 4 days post exposure, fluorogenic dyes that reflect cytoplasmic generation of reactive nitrogen/oxygen species (DAF FM Diacetate or CM H2DCFDA) revealed irradiation (50cGy) reduced free radical generation (20-45%) compared to sham irradiated controls. Alternatively, use of a dye showing relative specificity for mitochondrial superoxide generation (MitoSOX) revealed an 88% increase compared to controls. One week after exposure, reactive oxygen/nitrogen levels remained lower(24%) relative to sham irradiated controls. After one month, high dose irradiation (200 cGy) caused an 86% decrement in ex vivo nodule formation and a 16-31% decrement in bone volume to total volume and trabecular number (50, 200cGy) compared to controls. High dose irradiation (200cGy) up regulated expression of a late osteoblast marker (BGLAP) and select genes related to oxidative metabolism (Catalase) and DNA damage repair (Gadd45). In contrast, lower doses (5, 10cGy) did not affect bone structure or ex vivo nodule formation, but did down regulate iNOS by 0.54 - 0.58 fold

  14. Dosimetry of low-energy beta radiation

    International Nuclear Information System (INIS)

    Borg, J.

    1996-08-01

    Useful techniques and procedures for determination of absorbed doses from exposure in a low-energy β radiation field were studied and evaluated in this project. The four different techniques included were β spectrometry, extrapolation chamber dosimetry, Monte Carlo (MC) calculations, and exoelectron dosimetry. As a typical low-energy β radiation field a moderated spectrum from a 14 C source (E β , max =156 keV) was chosen for the study. The measured response of a Si(Li) detector to photons (bremsstrahlung) showed fine agreement with the MC calculated photon response, whereas the difference between measured and MC calculated responses to electrons indicates an additional dead layer thickness of about 12 μm in the Si(Li) detector. The depth-dose profiles measured with extrapolation chambers at two laboratories agreed very well, and it was confirmed that the fitting procedure previously reported for 147 Pm depth-dose profiles is also suitable for β radiation from 14 C. An increasing difference between measured and MC calculated dose rates for increasing absorber thickness was found, which is explained by limitations of the EGS4 code for transport of very low-energy electrons (below 10-20 keV). Finally a study of the thermally stimulated exoelectron emission (TSEE) response of BeO thin film dosemeters to β radiation for radiation fields with maximum β energies ranging from 67 keV to 2.27 MeV is reported. For maximum β energies below approximately 500 keV, a decrease in the response amounting to about 20% was observed. It is thus concluded that a β dose higher than about 10 μGy can be measured with these dosemeters to within 0 to -20% independently of the βenergy for E β , max values down to 67 keV. (au) 12 tabs., 38 ills., 71 refs

  15. Hydrogen-antihydrogen interactions at low energies

    International Nuclear Information System (INIS)

    Armour, E.A.G.; Carr, J.M.; Zeman, V.

    1999-01-01

    The main cause of loss of trapped AH is due to collisions with H 2 and He. As a first step towards treating these reactions we are studying the interaction of AH with H. We have carried out variational calculations to determine an upper bound to the smallest internuclear distance at which the light particles are still bound to the nuclei. We are currently in the process of taking into account the motion of the nuclei. This will enable us to calculate cross-sections for low energy H-AH scattering

  16. The low energy booster project status

    International Nuclear Information System (INIS)

    Tuttle, G.W.

    1993-05-01

    In order to achieve the required injection momentum, the Superconducting Super Collider (SSC) has an accelerator chain comprised of a Linear Accelerator and three synchrotrons. The Low Energy Booster (LEB) is the first synchrotron in this chain. The LEB project has made significant progress in the development of major subsystems and conventional construction. This paper briefly reviews the performance requirements of the LEB and describes significant achievements in each of the major subsystem areas. Highlighted among these achievements are the LEB foreign collaborations with the Budker Institute of Nuclear Physics (BINP) located in Novosibirsk, Russia

  17. Low energy constraints and scalar leptoquarks⋆

    Directory of Open Access Journals (Sweden)

    Fajfer Svjetlana

    2014-01-01

    Full Text Available The presence of a colored weak doublet scalar state with mass below 1 TeV can provide an explanation of the observed branching ratios in B → D(∗τντ decays. Constraints coming from Z → bb̄, muon g − 2, lepton flavor violating decays are derived. The colored scalar is accommodated within 45 representation of SU(5 group of unification. We show that presence of color scalar can improve mass relations in the up-type quark sector mass. Impact of the colored scalar embedding in 45-dimensional representation of SU(5 on low-energy phenomenology is also presented.

  18. Round Gating for Low Energy Block Ciphers

    DEFF Research Database (Denmark)

    Banik, Subhadeep; Bogdanov, Andrey; Regazzoni, Francesco

    2016-01-01

    design techniques for implementing block ciphers in a low energy fashion. We concentrate on round based implementation and we discuss how gating, applied at round level can affect and improve the energy consumption of the most common lightweight block cipher currently used in the internet of things....... Additionally, we discuss how to needed gating wave can be generated. Experimental results show that our technique is able to reduce the energy consumption in most block ciphers by over 60% while incurring only a minimal overhead in hardware....

  19. Low-energy phenomenological chiral Lagrangians

    International Nuclear Information System (INIS)

    Cavopol, A.V.

    1987-01-01

    We develop a phenomenological Lagrangian that satisfies the requirements of the so called alternative schemes designed to model low energy meson phenomenology. Linear and nonlinear σ type Lagrangians and symmetry breaking schemes are used to describe pions that exhibit masses proportional to the square of the symmetry breaking term's coefficient, ε. (m π 2 ∼ 0(ε 2 )). The invariance of the theory under coordinate dependent transformations is achieved by introducing gauge fields for both linear and nonlinear Lagrangians. Finally, analogies between the minimal symmetry breaking terms in Quantum Electrodynamics and in our phenomenological lagrangians are used to generate a discussion of the quark-pion mass dependence indicated by the model

  20. FLSR - The Frankfurt low energy storage ring

    Science.gov (United States)

    Stiebing, K. E.; Alexandrov, V.; Dörner, R.; Enz, S.; Kazarinov, N. Yu.; Kruppi, T.; Schempp, A.; Schmidt Böcking, H.; Völp, M.; Ziel, P.; Dworak, M.; Dilfer, W.

    2010-02-01

    An electrostatic storage ring for low-energy ions with a design energy of 50 keV is presently being set up at the Institut für Kernphysik der Johann Wolfgang Goethe-Universität Frankfurt am Main, Germany (IKF). This new device will provide a basis for new experiments on the dynamics of ionic and molecular collisions, as well as for high precision and time resolved laser spectroscopy. In this article, the design parameters of this instrument are reported.

  1. Low-energy QCD and ultraviolet renormalons

    International Nuclear Information System (INIS)

    Peris, S.

    1997-01-01

    We discuss the contribution of ultraviolet (UV) renormalons in QCD to two-point functions of quark current operators. This explicitly includes effects due to the exchange of one renormalon chain as well as two chains. It is shown that, when the external Euclidean momentum of the two-point functions becomes smaller than the scale Λ L associated with the Landau singularity of the QCD one-loop running coupling constant, the positions of the UV renormalons in the Borel plane become true singularities in the integration range of the Borel transform. This introduces ambiguities in the evaluation of the corresponding two-point functions. The ambiguities associated with the leading UV renormalon singularity are of the same type as the contribution due to the inclusion of dimension d=6 local operators in a low-energy effective Lagrangian valid at scales smaller than Λ L . We then discuss the inclusion of an infinite number of renormalon chains and argue that the previous ambiguity hints at a plausible approximation scheme for low-energy QCD, resulting in an effective Lagrangian similar to the one of the extended Nambu-Jona-Lasinio (ENJL) model of QCD at large N c . (orig.)

  2. Analysis of low energy beta-emitters

    International Nuclear Information System (INIS)

    Murphy, D.L.

    1979-10-01

    A survey was made of the instruments used for the determination of low energy beta radioactivity. Techniques commonly used are gas flow proportional counting, liquid scintillation counting, solid scintillation counting, and internal ionization chamber counting, solid state detector counting, and radiochemical separation followed by counting using one of the preceeding techniques. The first four techniques were examined and compared with each other. The sensitivities of the techniques were compared on the basis of the detection limits quoted for instruments described in the technical and reviewed literature. The detection limits were then related to the occupational and public individual maximum levels for air and water. Attention is focused primarily on the continuous monitoring of air for 3 H and 85 Kr, a medium energy β-emitter. It is clear that several continuous air monitoring instruments are readily available for measuring low energy β concentrations, even in presence of certain other activity, at occupational levels. However, these instruments do not typically have sensitivities comparable to the public individual levels. Moreover, their capabilities for giving results in real time and for differentiating among the radionuclides actually present is limited

  3. Low energy accelerators for research and applications

    International Nuclear Information System (INIS)

    Bhandari, R.K.

    2013-01-01

    Charged particle accelerators are instruments for producing a variety of radiations under controlled conditions for basic and applied research as well as applications. They have helped enormously to study the matter, atoms, nuclei, sub-nuclear particles and their constituents, forces involved in the related phenomena etc. No other man-made instrument has been so effective in such studies as the accelerator. The large accelerator constructed so far is the Large Hadron Collider (LHC) housed in a tunnel of 27 km circumference, while a small accelerator can fit inside a room. Small accelerators accelerate charged particles such as electrons, protons, deuterons, alphas and, in general ions to low energy, generally, below several MeV. These particle beams are used for studies in nuclear astrophysics, atomic physics, material science, surface physics, bio sciences etc. They are used for ion beam analysis such as RBS, PIXE, NRA, AMS, CPAA etc. More importantly, the ion beams have important industrial applications like ion implantation, surface modification, isotope production etc. while electron beams are used for material processing, material modification, sterilization, food preservation, non destructive testing etc. In this talk, role of low energy accelerators in research and industry as well as medicine will be discussed. (author)

  4. Studies in Low-Energy Nuclear Science

    International Nuclear Information System (INIS)

    Brune, Carl R.; Grimes, Steven M.

    2010-01-01

    This report presents a summary of research projects in the area of low energy nuclear reactions and structure, carried out between March 1, 2006 and October 31, 2009 which were supported by U.S. DOE grant number DE-FG52-06NA26187. We describe here research into low-energy nuclear reactions and structure. The statistical properties of nuclei have been studied by measuring level densities and also calculating them theoretically. Our approach of measuring level densities via evaporation spectra is able to reach a very wide range of nuclei by using heavy ion beams (we expect to develop experiments using radioactive beams in the near future). Another focus of the program has been on γ-ray strength functions. These clearly impact nuclear reactions, but they are much less understood than corresponding transmission coefficients for nucleons. We have begun investigations of a new approach, using γ-γ coincidences following radiative capture. Finally, we have undertaken several measurements of cross sections involving light nuclei which are important in various applications. The 9 Be(α,n) and B(d,n) reactions have been measured at Ohio University, while neutron-induced reactions have been measured at Los Alamos (LANSCE).

  5. Low energy theorems of hidden local symmetries

    International Nuclear Information System (INIS)

    Harada, Masayasu; Kugo, Taichiro; Yamawaki, Koichi.

    1994-01-01

    We prove to all orders of the loop expansion the low energy theorems of hidden local symmetries in four-dimensional nonlinear sigma models based on the coset space G/H, with G and H being arbitrary compact groups. Although the models are non-renormalizable, the proof is done in an analogous manner to the renormalization proof of gauge theories and two-dimensional nonlinear sigma models by restricting ourselves to the operators with two derivatives (counting a hidden gauge boson field as one derivative), i.e., with dimension 2, which are the only operators relevant to the low energy limit. Through loop-wise mathematical induction based on the Ward-Takahashi identity for the BRS symmetry, we solve renormalization equation for the effective action up to dimension-2 terms plus terms with the relevant BRS sources. We then show that all the quantum corrections to the dimension-2 operators, including the finite parts as well as the divergent ones, can be entirely absorbed into a re-definition (renormalization) of the parameters and the fields in the dimension-2 part of the tree-level Lagrangian. (author)

  6. Low Energy Nuclear Reactions: 2007 Update

    Science.gov (United States)

    Krivit, Steven B.

    2007-03-01

    This paper presents an overview of low energy nuclear reactions, a subset of the field of condensed matter nuclear science. Condensed matter nuclear science studies nuclear effects in and/or on condensed matter, including low energy nuclear reactions, an entirely new branch of science that gained widespread attention and notoriety beginning in 1989 with the announcement of a previously unrecognized source of energy by Martin Fleischmann and Stanley Pons that came to be known as cold fusion. Two branches of LENR are recognized. The first includes a set of reactions like those observed by Fleischmann and Pons that use palladium and deuterium and yield excess heat and helium-4. Numerous mechanisms have been proposed to explain these reactions, however there is no consensus for, or general acceptance of, any of the theories. The claim of fusion is still considered speculative and, as such, is not an ideal term for this work. The other branch is a wide assortment of nuclear reactions that may occur with either hydrogen or deuterium. Anomalous nuclear transmutations are reported that involve light as well as heavy elements. The significant questions that face this field of research are: 1) Are LENRs a genuine nuclear reaction? 2) If so, is there a release of excess energy? 3) If there is, is the energy release cost-effective?

  7. Low energy cyclotron for radiocarbon dating

    International Nuclear Information System (INIS)

    Welch, J.J.

    1984-12-01

    The measurement of naturally occurring radioisotopes whose half lives are less than a few hundred million years but more than a few years provides information about the temporal behavior of geologic and climatic processes, the temporal history of meteoritic bodies as well as the production mechanisms of these radioisotopes. A new extremely sensitive technique for measuring these radioisotopes at tandem Van de Graaff and cyclotron facilities has been very successful though the high cost and limited availability have been discouraging. We have built and tested a low energy cyclotron for radiocarbon dating similar in size to a conventional mass spectrometer. These tests clearly show that with the addition of a conventional ion source, the low energy cyclotron can perform the extremely high sensitivity 14 C measurements that are now done at accelerator facilities. We found that no significant background is present when the cyclotron is tuned to accelerate 14 C negative ions and the transmission efficiency is adequate to perform radiocarbon dating on milligram samples of carbon. The internal ion source used did not produce sufficient current to detect 14 C directly at modern concentrations. We show how a conventional carbon negative ion source, located outside the cyclotron magnet, would produce sufficient beam and provide for quick sampling to make radiocarbon dating milligram samples with a modest laboratory instrument feasible

  8. Experimental perspectives in low energy lepton physics

    International Nuclear Information System (INIS)

    Fiorini, E.

    1986-01-01

    Low energy nuclear physics has been and is going to be an essential tool for the study of weak interaction and neutrino physics. The use of the atomic nucleus as a ''microlaboratory'' with well defined quantum numbers is undoubtedly going to yield important and sometimes perhaps unexpected results on the symmetry laws governing the subnuclear world. These searches are however very hard experimentally and the bottleneck on obtaining more stringent results only rarely depends on the need of large and expensive apparatuses as those used in high energy physics: more limiting are technical difficulties. The author believes therefore that a real break-through to overcome the present experimental limitations can only be obtained with totally new and sometime ''non canonical'' technical approaches. This paper is an admittedly incomplete discussion of some of them. The author considers separately searches for rare decays, detection of low energy neutrinos and measurements of the neutrino mass, even if some of these new techniques are common to more than one of these subjects

  9. Beam diagnostics for low energy beams

    Directory of Open Access Journals (Sweden)

    J. Harasimowicz

    2012-12-01

    Full Text Available Low-energetic ion and antimatter beams are very attractive for a number of fundamental studies. The diagnostics of such beams, however, is a challenge due to low currents down to only a few thousands of particles per second and significant fraction of energy loss in matter at keV beam energies. A modular set of particle detectors has been developed to suit the particular beam diagnostic needs of the ultralow-energy storage ring (USR at the future facility for low-energy antiproton and ion research, accommodating very low beam intensities at energies down to 20 keV. The detectors include beam-profile monitors based on scintillating screens and secondary electron emission, sensitive Faraday cups for absolute intensity measurements, and capacitive pickups for beam position monitoring. In this paper, the design of all detectors is presented in detail and results from beam measurements are shown. The resolution limits of all detectors are described and options for further improvement summarized. Whilst initially developed for the USR, the instrumentation described in this paper is also well suited for use in other low-intensity, low-energy accelerators, storage rings, and beam lines.

  10. A model system to give an insight into the behaviour of gold nanoparticles under ion irradiation

    International Nuclear Information System (INIS)

    Ramjauny, Y.

    2010-01-01

    Nano-composites fabricated with ion-based techniques have a number of attractive characteristics. However, the main and most crucial difficulty in obtaining commercial NPs-based devices is the inability to produce a suitable narrow size and spatial NP distributions. The objective of this thesis is twofold: i) to go further in the description of the behavior of the ion-driven NPs and ii) to overcome the limitations related to the ion-beam techniques providing a guideline methodology to rationalize the synthesis of NPs when ion-beams are used. Thus, a model system is fabricated. It consists of chemically synthesized metallic nanoparticles sandwiched between two silica layers. We show how the ion irradiation and the temperature can be used to tune the size distribution of the embedded NPs. Moreover, we show that when an initially large NPs size distribution is considered, the study of the growth kinetic of the NPs under irradiation can be problematic. Our model system is than used to investigate in detail the behavior of the NPs under irradiation. We show that the evolution of the precipitate phase under irradiation is successfully described by an Ostwald ripening mechanism in an open system limited by the diffusion. Moreover, the concentration threshold for nucleation as well as the surface tension and the gold diffusivity in silica under irradiation is estimated. Finally, direct and inverse Ostwald ripening processes under irradiation are systematically investigated and the existing theoretical models experimentally checked. (author)

  11. Ion irradiation studies on the void swelling behavior of a titanium modified D9 alloy

    Science.gov (United States)

    Balaji, S.; Mohan, Sruthi; Amirthapandian, S.; Chinnathambi, S.; David, C.; Panigrahi, B. K.

    2015-12-01

    The sensitivity of Positron Annihilation Spectroscopy (PAS) for probing vacancy defects and their environment is well known. Its applicability in determination of swelling and the peak swelling temperature was put to test in our earlier work on ion irradiated D9 alloys [1]. Upon comparison with the peak swelling temperature determined by conventional step height measurements it was found that the peak swelling temperature determined using PAS was 50 K higher. It was conjectured that the positrons trapping in the irradiation induced TiC precipitation could have caused the shift. In the present work, D9 alloys have been implanted with 100 appm helium ions and subsequently implanted with 2.5 MeV Ni ions up to peak damage of 100 dpa. The nickel implantations have been carried out through a range of temperatures between 450 °C and 650 °C. The evolution of cavities and TiC precipitates at various temperatures has been followed by TEM and this report provides an experimental verification of the conjecture.

  12. Observations of defect structure evolution in proton and Ni ion irradiated Ni-Cr binary alloys

    Energy Technology Data Exchange (ETDEWEB)

    Briggs, Samuel A., E-mail: sabriggs2@wisc.edu [University of Wisconsin-Madison, 1415 Engineering Drive, Madison, WI 53706 (United States); Barr, Christopher M. [Drexel University, 3141 Chestnut Street, Philadelphia, PA 19104 (United States); Pakarinen, Janne [University of Wisconsin-Madison, 1415 Engineering Drive, Madison, WI 53706 (United States); SKC-CEN Belgian Nuclear Research Centre, Boeretang 200, B-2400 Mol (Belgium); Mamivand, Mahmood [University of Wisconsin-Madison, 1415 Engineering Drive, Madison, WI 53706 (United States); Hattar, Khalid [Sandia National Laboratories, PO Box 5800, Albuquerque, NM 87185 (United States); Morgan, Dane D. [University of Wisconsin-Madison, 1415 Engineering Drive, Madison, WI 53706 (United States); Taheri, Mitra [Drexel University, 3141 Chestnut Street, Philadelphia, PA 19104 (United States); Sridharan, Kumar [University of Wisconsin-Madison, 1415 Engineering Drive, Madison, WI 53706 (United States)

    2016-10-15

    Two binary Ni-Cr model alloys with 5 wt% Cr and 18 wt% Cr were irradiated using 2 MeV protons at 400 and 500 °C and 20 MeV Ni{sup 4+} ions at 500 °C to investigate microstructural evolution as a function of composition, irradiation temperature, and irradiating ion species. Transmission electron microscopy (TEM) was applied to study irradiation-induced void and faulted Frank loops microstructures. Irradiations at 500 °C were shown to generate decreased densities of larger defects, likely due to increased barriers to defect nucleation as compared to 400 °C irradiations. Heavy ion irradiation resulted in a larger density of smaller voids when compared to proton irradiations, indicating in-cascade clustering of point defects. Cluster dynamics simulations were in good agreement with the experimental findings, suggesting that increases in Cr content lead to an increase in interstitial binding energy, leading to higher densities of smaller dislocation loops in the Ni-18Cr alloy as compared to the Ni-5Cr alloy. - Highlights: • Binary Ni-Cr alloys were irradiated with protons or Ni ions at 400 and 500 °C. • Higher irradiation temperatures yield increased size, decreased density of defects. • Hypothesize that varying Cr content affects interstitial binding energy. • Fitting CD models for loop nucleation to data supports this hypothesis.

  13. Microstructure of Au-ion irradiated 316L and FeNiCr austenitic stainless steels

    Energy Technology Data Exchange (ETDEWEB)

    Jublot-Leclerc, S., E-mail: stephanie.jublot-leclerc@csnsm.in2p3.fr [CSNSM, Univ Paris-Sud, CNRS, Université Paris Saclay, 91405 Orsay (France); Li, X. [CSNSM, Univ Paris-Sud, CNRS, Université Paris Saclay, 91405 Orsay (France); Legras, L.; Lescoat, M.-L. [EDF R& D, Groupe Métallurgie, Les Renardières, 77818 Moret sur Loing (France); Fortuna, F.; Gentils, A. [CSNSM, Univ Paris-Sud, CNRS, Université Paris Saclay, 91405 Orsay (France)

    2016-11-15

    Thin foils of 316L were irradiated in situ in a Transmission Electron Microscope with 4 MeV Au ions at 450 °C and 550 °C. Similar irradiations were performed at 450 °C in FeNiCr. The void and dislocation microstructure of 316L is found to depend strongly on temperature. At 450 °C, a dense network of dislocation lines is observed in situ to grow from black dot defects by absorption of other black dots and interstitial clusters whilst no Frank loops are detected. At 550 °C, no such network is observed but large Frank loops and perfect loops whose sudden appearance is concomitant with a strong increase in void density as a result of a strong coupling between voids and dislocations. Moreover, differences in both alloys microstructure show the major role played by the minor constituents of 316L, increasing the stacking fault formation energy, and possibly leading to significant differences in swelling behaviour. - Highlights: • 316L and FeNiCr were ion irradiated in situ in a TEM at elevated temperature. • The minor constituents of 316L play a major role in the resulting microstructure. • A dense network of dislocations develops in both alloys from black dot defects. • The nucleation and growth of voids and dislocations are strongly correlated. • The Frank loop mean size saturates at similar dpa values as in neutron irradiation.

  14. Tunable electronic, electrical and optical properties of graphene oxide sheets by ion irradiation

    Science.gov (United States)

    Jayalakshmi, G.; Saravanan, K.; Panigrahi, B. K.; Sundaravel, B.; Gupta, Mukul

    2018-05-01

    The tunable electronic, electrical and optical properties of graphene oxide (GO) sheets were investigated using a controlled reduction by 500 keV Ar+-ion irradiation. The carbon to oxygen ratio of the GO sheets upon the ion beam reduction has been estimated using resonant Rutherford backscattering spectrometry analyses and its effect on the electrical and optical properties of GO sheets has been studied using sheet resistance measurements and photoluminescence (PL) measurements. The restoration of sp 2-hybridized carbon atoms within the sp 3 matrix is found to be increases with increasing the Ar+-ion fluences as evident from Fourier transform infrared, and x-ray absorption near-edge structure measurements. The decrease in the number of disorder-induced local density of states (LDOSs) within the π-π* gap upon the reduction causes the shifting of PL emission from near infra-red to blue region and decreases the sheet resistance. The improved electrical and optical properties of GO sheets were correlated to the decrease in the number of LDOSs within the π-π* gap. Our experimental investigations suggest ion beam irradiation is one of an effective approaches to reduce GO to RGO and to tailor its electronic, electrical and optical properties.

  15. Anti-biofilm efficacy of 100 MeV gold ion irradiated polycarbonate against Salmonella typhi

    Science.gov (United States)

    Joshi, R. P.; Hareesh, K.; Bankar, A.; Sanjeev, G.; Asokan, K.; Kanjilal, D.; Dahiwale, S. S.; Bhoraskar, V. N.; Dhole, S. D.

    2017-12-01

    Polycarbonate (PC) films were irradiated by 100 MeV gold (Au7+) ions and characterized to study changes in its optical, chemical, surface morphology and thermal properties. UV-Visible spectroscopic results revealed the decrease in the optical band gap of PC after ion irradiation due to chain scission mainly at the carbonyl group which is corroborated by Fourier Transform Infrared spectroscopic results. X-ray diffractogram study showed decrease in crystallinity of PC film after irradiation. Scanning electron microscopic results showed the micropores formation in PC which results in surface roughening. Differential scanning calorimetric results revealed decrease in glass transition temperature indicating the decrease in molecular weight of PC corroborated by rheometric studies. PC films irradiated by 100 MeV Au7+ ions showed increased anti-biofilm activity against the human pathogen, Salmonella typhi (S. typhi). Morphology of S. typhi was changed due to stress of Au7+ irradiated PC. Cells length was increased with increasing fluences. The average cell length, cell volume and surface area was increased significantly (PBiofilm formation was inhibited ≈ 20% at lower fluence and 96% at higher fluence, which observed to be enhanced anti-biofilm activity in Au7+ irradiated PC.

  16. Ion irradiation-induced swelling and hardening effect of Hastelloy N alloy

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, S.J. [Key Laboratory of Artificial Micro-and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072 (China); Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800 (China); Li, D.H.; Chen, H.C.; Lei, G.H.; Huang, H.F.; Zhang, W.; Wang, C.B. [Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800 (China); Yan, L., E-mail: yanlong@sinap.ac.cn [Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800 (China); Fu, D.J. [Key Laboratory of Artificial Micro-and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072 (China); Tang, M. [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States)

    2017-06-15

    The volumetric swelling and hardening effect of irradiated Hastelloy N alloy were investigated in this paper. 7 MeV and 1 MeV Xe ions irradiations were performed at room temperature (RT) with irradiation dose ranging from 0.5 to 27 dpa. The volumetric swelling increases with increasing irradiation dose, and reaches up to 3.2% at 27 dpa. And the irradiation induced lattice expansion is also observed. The irradiation induced hardening initiates at low ion dose (≤1dpa) then saturates with higher ion dose. The irradiation induced volumetric swelling may be ascribed to excess atomic volume of defects. The irradiation induced hardening may be explained by the pinning effect where the defects can act as obstacles for the free movement of dislocation lines. And the evolution of the defects' size and number density could be responsible for the saturation of hardness. - Highlights: •Irradiation Swelling: The irradiation induced volumetric swelling increases with ion dose. •Irradiation Hardening: The irradiation hardening initiates below 1 dpa, then saturates with higher ion dose (1–10 dpa). •Irradiation Mechanism: The irradiation phenomena are ascribed to the microstructural evolution of the irradiation defects.

  17. Anisotropic dislocation loop nucleation in ion-irradiated MgAl2O4

    International Nuclear Information System (INIS)

    Zinkle, S.J.

    1992-01-01

    This work is intended to investigate the effects of transmutation products and varying ionizing-to-displacive damage ratio on microstructural evolution in ceramics for fusion machine. Polycrystalline disks of stoichiometric magnesium aluminate spinel (MgAl 2 O 4 ) were irradiated with 2 MeV Al + ions at 650C and subsequently analyzed in cross section using transmission electron microscopy (TEM). Interstitial dislocation loops were observed on [110] and [111] habit planes. The population of loops on both sets of habit planes was strongly dependent on their orientation with respect to the ion beam direction. The density of loops with habit plane normals nearly perpendicular to the ion beam direction was much higher than loops with habit plane normals nearly parallel to the ion beam direction. On the other hand, the loop size was nearly independent of habit plane orientation. This anisotropic loop nucleation does not occur in ion-irradiated metals such as copper and may be associated with the structure of displacement cascades in ceramics

  18. 130 MeV Au ion irradiation induced dewetting on In2Te3 thin film

    International Nuclear Information System (INIS)

    Matheswaran, P.; Abhirami, K.M.; Gokul, B.; Sathyamoorthy, R.; Prakash, Jai; Asokan, K.; Kanjilal, D.

    2012-01-01

    Highlights: ► In 2 Te 3 phase formed from In/Te bilayer by 130 MeV Au ion irradiation. ► Lower fluence results mixed phases with initial state of dewetting. ► At higher fluence, In 2 Te 3 phase with complete dewetting pattern is formed. ► Thermal spike model is used to explain the inter face mixing phenomena. ► SHI irradiation may be used to functionalize the structural and surface properties of thin films. - Abstract: In/Te bilayer thin films were prepared by sequential thermal evaporation and subsequently irradiated by 130 MeV Au ions. The pristine and irradiated samples were characterized by X-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS), scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX) techniques. RBS spectra reveal the sputtering of Te film and interface mixing, with increasing fluence. The surface morphology showed the beginning of dewetting of Te thin film and formation of the partially connected with the mixed zones at the fluence of 1 × 10 13 ions/cm 2 . At the higher fluence of 3 × 10 13 ions/cm 2 , dewetted structures were isolated at the surface. Above results are explained based on the formation of craters, sputtering and dewetting followed by inter-diffusion at the interface of molten zones due to thermal spike induced by Au ions.

  19. Analysis of mutations in the human HPRT gene induced by accelerated heavy-ion irradiation

    International Nuclear Information System (INIS)

    Kagawa, Yasuhiro; Yatagai, Fumio; Hanaoka, Fumio; Suzuki, Masao; Kase, Youko; Kobayashi, Akiko; Hirano, Masahiko; Kato, Takesi; Watanabe, Masami.

    1995-01-01

    Multiplex PCR analysis of HPRT(-) mutations in human embryo (HE) cells induced by 230 keV/μm carbon-ion irradiation showed no large deletion around the exon regions of the locus gene in contrast to the irradiations at different LETs. To identify these mutations, the sequence alterations in a cDNA of hprt gene were determined for 18 mutant clones in this study. Missing of exon 6 was the most frequent mutational event (10 clones), and missing of both exons 6 and 8 was next most frequent event (6 clones), then base substitutions (2 clones). These characteristics were not seen in a similar analysis of spontaneous mutations, which showed base substitution (5 clones), frameshift (2 clones), missing of both exons 2 and 3 (2 clones), and a single unidentified clone. Direct sequencing and restriction enzyme digestion of the genomic DNA of the mutants which showed missing of exons 6 and 8 in the cDNA, supports the possibility that they were induced by aberrant mRNA splicing. (author)

  20. Effect of radiation quality on radical formation in ion-irradiated solid alanine

    Energy Technology Data Exchange (ETDEWEB)

    Koizumi, Hitoshi; Ichikawa, Tsuneki; Yoshida, Hiroshi [Hokkaido Univ., Sapporo (Japan); Namba, Hideki; Taguchi, Mitsumasa; Kojima, Takuji

    1997-03-01

    Radical formation in solid alanine irradiated with H{sup +} and He{sup +} ions of 0.5-3.0 MeV and with heavy ions of hundreds of MeV was examined by the ESR method. Radical yield is constant below a critical fluence, and the yield decreases above the fluence. The critical fluence for the H{sup +} and He{sup +} ions is about 10{sup 12} ions cm{sup -2}, while the critical fluence for the heavy ions is 10{sup 10}-10{sup 11} ions cm{sup -2}. G-value of the radical formation (radicals per 100 eV absorbed dose) is obtained from the constant yield at the low fluences. The G-value depends on the radiation quality. This dependence is ascribed to the difference of local dose in the ion tracks. The fluence-yield curves were simulated with a model assuming cylindrical shape of ion tracks and dose-yield relationship for {gamma}-irradiation. This model well explains the fluence-yield curves for the ion irradiations. (author)

  1. Comparison between bulk and thin foil ion irradiation of ultra high purity Fe

    Energy Technology Data Exchange (ETDEWEB)

    Prokhodtseva, A., E-mail: anna.prokhodtseva@psi.ch [Ecole Polytechnique Fédérale de Lausanne (EPFL), Centre de Recherches en Physique des Plasmas, Association Euratom-Confédération Suisse, 5232 Villigen PSI (Switzerland); Décamps, B. [Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse (CSNSM), CNRS-IN2P3-Univ. Paris-Sud 11, UMR 8609, Bât. 108, 91405 Orsay (France); Schäublin, R. [Ecole Polytechnique Fédérale de Lausanne (EPFL), Centre de Recherches en Physique des Plasmas, Association Euratom-Confédération Suisse, 5232 Villigen PSI (Switzerland)

    2013-11-15

    Accumulation of radiation damage in ultra high purity iron under self ion irradiation without and with simultaneous He implantation was investigated in bulk and thin foil form to assess, on the one hand, the effect of free surfaces and, on the other hand, the influence of He. Specimens were irradiated at room temperature to a dose of 0.8 dpa and ∼900 appm He content. We found in thin foils after irradiation with single beam a majority of a{sub 0} 〈1 0 0〉 type loops, while in the presence of He it is the ½ a{sub 0} 〈1 1 1〉 type loops that prevail. In single beam irradiated bulk samples most of the loops are of ½ a{sub 0} 〈1 1 1〉 type. In both bulk and thin foils density of defects visible in transmission electron microscope is considerably higher when He is implanted with prevailing ½ a{sub 0} 〈1 1 1〉 dislocation loops, indicating that He stabilizes them.

  2. Absence of single critical dose for the amorphization of quartz under ion irradiation

    Science.gov (United States)

    Zhang, S.; Pakarinen, O. H.; Backholm, M.; Djurabekova, F.; Nordlund, K.; Keinonen, J.; Wang, T. S.

    2018-01-01

    In this work, we first simulated the amorphization of crystalline quartz under 50 keV 23 Na ion irradiation with classical molecular dynamics (MD). We then used binary collision approximation algorithms to simulate the Rutherford backscattering spectrometry in channeling conditions (RBS-C) from these irradiated MD cells, and compared the RBS-C spectra with experiments. The simulated RBS-C results show an agreement with experiments in the evolution of amorphization as a function of dose, showing what appears to be (by this measure) full amorphization at about 2.2 eVṡatom-1 . We also applied other analysis methods, such as angular structure factor, Wigner-Seitz, coordination analysis and topological analysis, to analyze the structural evolution of the irradiated MD cells. The results show that the atomic-level structure of the sample keeps evolving after the RBS signal has saturated, until the dose of about 5 eVṡatom-1 . The continued evolution of the SiO2 structure makes the definition of what is, on the atomic level, an amorphized quartz ambiguous.

  3. Comparison of deuterium retention for ion-irradiated and neutron-irradiated tungsten

    International Nuclear Information System (INIS)

    Oya, Yasuhisa; Kobayashi, Makoto; Okuno, Kenji; Shimada, Masashi; Calderoni, Pattrick; Oda, Takuji; Hara, Masanori; Hatano, Yuji; Watanabe, Hideo

    2014-01-01

    The behavior of D retentions for Fe 2+ irradiated tungsten with the damage of 0.025-3 dpa was compared with that for neutron irradiated tungsten with 0.025 dpa. The D 2 TDS spectra for Fe 2+ irradiated tungsten consisted of two desorption stages at 450 K and 550 K although that for neutron irradiated tungsten was composed of three stages and addition desorption stage was found around 750 K. The desorption rate of major desorption stage at 550 K increased as the number of dpa by Fe 2+ irradiation increased. In addition, the first desorption stage at 450 K was only found for the damaged samples, indicating that the second stage would be based on intrinsic defects or vacancy produced by Fe 2+ irradiation and the first stage should be the accumulation of D in mono vacancy leading to the lower activation energy, where the dislocation loop and vacancy was produced. The third one was only found for the neutron irradiation, showing the D trapping by void or vacancy cluster and the diffusion effect is also contributed due to high FWHM of TDS spectrum. It can be said that the D 2 TDS spectra for Fe 2+ -irradiated tungsten could not represent that for neutron-irradiated one, showing that the deuterium trapping and desorption mechanism for neutron-irradiated tungsten has a difference from that for ion-irradiated one. (author)

  4. Superconductivity of tin and lead after heavy ion irradiation below 7.2 K

    International Nuclear Information System (INIS)

    Klaumuenzer, S.

    1978-01-01

    In this work the influence of radiation defects induced by heavy ion irradiation at low temperatures on the specific residual resistivity, the critical temperature of superconductivity, and the width of the resistive-superconductive phase transition have been measured for lead and tin as a function of dose and subsequent isochronous annealing. In the case of lead the critical magnetic field parallel to the surface of the sample, which in a wide range of defect contrations is identical with the surface superconductivity critical field, also has been measured at 5 K and 6 K as a function of dose and subsequent isochronous annealing. As projectiles 25 MeV oxygen ions have been used for irradiation, with a sufficiently low particle flux to obtain irradiation temperatures below about 7.2 K. However these temperatures are large enough to allow for free motion of interstitial atoms in the case of lead. For tin the results presented here also suggest free motion of the defects. (orig./WBU) [de

  5. Preparation and Characterization of Ion-Irradiated Nanodiamonds as Photoacoustic Contrast Agents.

    Science.gov (United States)

    Fang, Chia-Yi; Chang, Cheng-Chun; Mou, Chung-Yuan; Chang, Huan-Cheng

    2015-02-01

    Highly radiation-damaged or irradiated nanodiamonds (INDs) are a new type of nanomaterial developed recently as a potential photoacoustic (PA) contrast agent for deep-tissue imaging. This work characterized in detail the photophysical properties of these materials prepared by ion irradiation of natural diamond powders using various spectroscopic methods. For 40-nm NDs irradiated with 40-keV He+ at a dose of 3 x 10(15) ions/cm2, an average molar extinction coefficient of 4.2 M-1 cm-1 per carbon atom was measured at 1064 nm. Compared with gold nanorods of similar dimensions (10 nm x 67 nm), the INDs have a substantially smaller (by > 4 orders of magnitude) molar extinction coefficient per particle. However, the deficit is readily compensated by the much higher thermal stability, stronger hydrophilic interaction with water, and a lower nanobubble formation threshold (~30 mJ/cm2) of the sp3-carbon-based nanomaterial. No sign of photodamage was detected after high-energy (>100 mJ/cm2) illumination of the INDs for hours. Cell viability assays at the IND concentration of up to 100 µg/mL showed that the nanomaterial is non-cytotoxic and potentially useful for long-term PA bioimaging applications.

  6. Methodology for determining void swelling at very high damage under ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Getto, E., E-mail: embecket@umich.edu [Department of Nuclear Engineering and Radiological Sciences, University of Michigan, Ann Arbor, MI 48109 (United States); Sun, K. [Department of Materials Science Engineering, University of Michigan, Ann Arbor, MI 48109 (United States); Taller, S.; Monterrosa, A.M.; Jiao, Z. [Department of Nuclear Engineering and Radiological Sciences, University of Michigan, Ann Arbor, MI 48109 (United States); Was, G.S. [Department of Nuclear Engineering and Radiological Sciences, University of Michigan, Ann Arbor, MI 48109 (United States); Department of Materials Science Engineering, University of Michigan, Ann Arbor, MI 48109 (United States)

    2016-08-15

    At very high damage levels in ion irradiated samples, the decrease in effective density of the irradiated material due to void swelling can lead to errors in quantifying swelling. HT9 was pre-implanted with 10 appm He and subjected to a raster-scanned beam with a damage rate of ∼1 × 10{sup −3} dpa/s at 460{sup o}C. Voids were characterized from 0 to 1300 nm. Fixed damage rate and fixed depth methods were developed to account for damage-dependent porosity increase and resulting dependence on depth. The fixed depth method was more appropriate as it limits undue effects from the injected interstitial while maintaining a usable void distribution. By keeping the depth fixed and accounting for the change in damage rate due to reduced density, the steady state swelling rate was 10% higher than calculation of swelling from raw data. This method is easily translatable to other materials, ion types and energies and limits the impact of the injected interstitial.

  7. Optical properties of Ar ions irradiated nanocrystalline ZrC and ZrN thin films

    Energy Technology Data Exchange (ETDEWEB)

    Martin, C. [Ramapo College of New Jersey, Mahwah, NJ 07430 (United States); Miller, K.H. [NASA Goddard Space Flight Center, Greenbelt, MD 20771 (United States); Makino, H. [Research Institute, Kochi University of Technology, Kami, Kochi, 782-8502 (Japan); Craciun, D. [National Institute for Laser, Plasma, and Radiation Physics, Bucharest-Magurele (Romania); Simeone, D. [CEA/DEN/DANS/DM2S/SERMA/LEPP-LRC CARMEN CEN Saclay France & CNRS/ SPMS UMR8785 LRC CARMEN, Ecole Centrale de Paris, F92292, Chatenay Malabry (United States); Craciun, V., E-mail: valentin.craciun@inflpr.ro [National Institute for Laser, Plasma, and Radiation Physics, Bucharest-Magurele (Romania)

    2017-05-15

    Employing wide spectral range (0.06–6 eV) optical reflectance measurements and high energy X-ray photoemission spectroscopy (HE-XPS), we studied the effect of 800 keV Ar ion irradiation on optical and electronic properties of nanocrystalline ZrC and ZrN thin films, which were obtain by the pulsed laser deposition technique. Both in ZrC and ZrN, we observed that irradiation affects the optical properties of the films mostly at low frequencies, which is dominated by the free carriers response. In both materials, we found a significant reduction in the free carriers scattering rate and an increase of the zero frequency conductivity, i.e. possible increase in mobility, at higher irradiation fluence. This is consistent with our previous findings that irradiation affects the crystallite size and the micro-strain, but it does not induce major changes in the chemical bonding. HE-XPS investigations further confirms the stability of the Zr-C and Zr-N bonds, despite a small increase in the surface region of the Zr-O bonds fraction with increasing irradiation fluence.

  8. Development of porous structures in GaSb by ion irradiation

    International Nuclear Information System (INIS)

    Jacobi, C.C.; Steinbach, T.; Wesch, W.

    2012-01-01

    Ion irradiation of GaSb causes not only defect formation but also leads to the formation of a porous structure. To study the behaviour of this structural modification, GaSb was irradiated with 6 MeV Iodine ions and ion fluences from 5 × 10 12 to 6 × 10 15 ions/cm 2 . The samples were investigated by step height measurements and scanning electron microscopy (SEM). Experiments were performed with two different procedures: (CI) Continuous Irradiation of samples followed by measurements of the step height in air and (SI) Stepwise Irradiation of samples with measurements of the step height in air between subsequent irradiations. Samples irradiated continuously, show a linear increase of the step height with increasing ion fluence up to 1.5 × 10 14 ions/cm 2 followed by a steeper, linear increase for higher ion fluences up to a step height of 32 μm. This swelling is induced by a formation of voids, and the two different slopes can be explained by a transformation from isolated voids to a rod like structure. For samples irradiated accordingly to procedure (SI), the step height shows the same behaviour up to an ion fluence of 1.5 × 10 14 ions/cm 2 resulting in a step height of ≈3 μm but then decreases with further irradiation. The latter effect is caused by a compaction of the porous structure.

  9. Monte Carlo simulations of prompt-gamma emission during carbon ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Le Foulher, F.; Bajard, M.; Chevallier, M.; Dauvergne, D.; Henriquet, P.; Ray, C.; Testa, E.; Testa, M. [Universite de Lyon 1, F-69003 Lyon (France); IN2P3/CNRS, UMR 5822, Institut de Physique Nucleaire de Lyon, F-69622 Villeurbanne (France); Freud, N.; Letang, J. M. [Laboratoire de Controles Non Destructifs Par Rayonnements Ionisants, INSA-Lyon, F-69621 Villeurbanne cedex (France); Karkar, S. [CPPM, Aix-Marseille Universite, CNRS/IN2P3, Marseille (France); Plescak, R.; Schardt, D. [Gesellschaft fur Schwerionenforschung (GSI), D-64291 Darmstadt (Germany)

    2009-07-01

    Monte Carlo simulations based on the Geant4 tool-kit (version 9.1) were performed to study the emission of secondary prompt gamma-rays produced by nuclear reactions during carbon ion-beam therapy. These simulations were performed along with an experimental program and instrumentation developments which aim at designing a prompt gamma-ray device for real-time control of hadron therapy. The objective of the present study is twofold: first, to present the features of the prompt gamma radiation in the case of carbon ion irradiation; secondly, to simulate the experimental setup and to compare measured and simulated counting rates corresponding to various experiments. For each experiment, we found that simulations overestimate prompt gamma-ray detection yields by a factor of 12. Uncertainties in fragmentation cross sections and binary cascade model cannot explain such discrepancies. The so-called 'photon evaporation' model is therefore questionable and its modification is currently in progress. (authors)

  10. Correlation of blister diameter and blister skin thickness in helium-ion-irradiated Nb

    International Nuclear Information System (INIS)

    Das, S.K.; Kaminsky, M.; Fenske, G.

    1979-01-01

    A systematic study of the correlation between blister diameter and blister skin thickness has been performed for helium-ion irradiation of monocrystalline and polycrystalline Nb for ion energies ranging from 20 to 500 keV. The results indicate that a relationship Datsub mpatproportionaltatsup 1.50at between the most probable blister diameter, Datsub mpat, and blister skin thickness, t, which has been suggested by other authors, does not exist for the various types of Nb targets studied. For example, for room-temperature irradiation of annealed polycrystalline Nb the experimentally determined relationship is Datsub mpat<10.3tatsup 1.22at. Furthermore, the D-t relationship was found to depend on the irradiation temperature in contrast to theoretical predictions by the lateral stress model of blister formation. These results do not appear to support the lateral stress model which predicts the relationship Dproportionaltatsup 1.5at. However, the experimentally determined relationships can be explained in part by the gas pressure model of blister formation

  11. The thermal-spike model description of the ion-irradiated polyimide

    International Nuclear Information System (INIS)

    Sun Youmei; Zhang Chonghong; Zhu Zhiyong; Wang Zhiguang; Jin Yunfan; Liu Jie; Wang Ying

    2004-01-01

    To describe the role of electronic energy loss (dE/dX) e for chemical modification of polyimide (PI), multi-layer stacks (corresponding to different dE/dX) were irradiated by different swift heavy ions (1.158 GeV Fe 56 and 1.755 GeV Xe 136 ) under vacuum and at room temperature. Chemical changes of modified PI films were studied by Fourier transform infrared (FTIR) spectroscopy. The chain disruption rate of PI was investigated in the fluence range from 1 x 10 11 to 6 x 10 12 ions/cm 2 and a wider energy stopping power range (2.2-5.1 keV/nm for Fe 56 ions and 8.6-11.5 keV/nm for Xe 136 ions). Alkyne formation was observed over the electronic energy loss range of interest. By applying the saturated track model assumption (the damage process only occur in a cylinder of area σ), the mean degradation and alkyne formation radii in tracks were induced for Fe and Xe ion irradiation, respectively. The results were validated by the thermal-spike model. The analysis of the irradiated PI films shows that the predictions of the thermal-spike model of Szenes are in qualitative agreement with the curve shape of experimental results

  12. Effect of swift heavy ion irradiation on bare and coated ZnS quantum dots

    International Nuclear Information System (INIS)

    Chowdhury, S.; Hussain, A.M.P.; Ahmed, G.A.; Singh, F.; Avasthi, D.K.; Choudhury, A.

    2008-01-01

    The present study compares structural and optical modifications of bare and silica (SiO 2 ) coated ZnS quantum dots under swift heavy ion (SHI) irradiation. Bare and silica coated ZnS quantum dots were prepared following an inexpensive chemical route using polyvinyl alcohol (PVA) as the dielectric host matrix. X-ray diffraction (XRD) and transmission electron microscopy (TEM) study of the samples show the formation of almost spherical ZnS quantum dots. The UV-Vis absorption spectra reveal blue shift relative to bulk material in absorption energy while photoluminescence (PL) spectra suggests that surface state and near band edge emissions are dominating in case of bare and coated samples, respectively. Swift heavy ion irradiation of the samples was carried out with 160 MeV Ni 12+ ion beam with fluences 10 12 to 10 13 ions/cm 2 . Size enhancement of bare quantum dots after irradiation has been indicated in XRD and TEM analysis of the samples which has also been supported by optical absorption spectra. However similar investigations on irradiated coated quantum dots revealed little change in quantum dot size and emission. The present study thus shows that the coated ZnS quantum dots are stable upon SHI irradiation compared to the bare one

  13. Whiskers growth and self-healing in Ti-based metallic glasses during ion irradiation

    Science.gov (United States)

    Zhang, Kun; Hu, Zheng; Zhao, Ziqiang; Wei, Bingchen; Li, Yansen; Wei, Yuhang

    2018-04-01

    Ti-based metallic glasses were subjected to a 20 MeV Cl4+ ion radiation under liquid-nitrogen cooling. Their responses, as well as effects of the electronic excitation and nucleus-nucleus collision were evaluated. The collision cascade during irradiation typically changes the structure by increasing the liquid-like zone/cluster, or the content of the free volume. However, along the ion incident depth, the structure change is inhomogeneous. Numerous whiskers appear and aggregate on the side of the irradiation surface, which are several micrometers away from the edge. This corresponds with the maximum collision depth obtained by the Monte Carlo simulation, where nuclear loss plays a dominant role. Moreover, the liquid-like zone continually forms, which add to the whiskers growth and subsequent self-healing. Results suggest that the irradiation-induced local shear stress combines with the well-localized liquid-like zone results in the observed phenomena. This study demonstrates that metallic glasses have high morphological instability under ion irradiation, which assets can pave new paths for their further applications.

  14. Interdiffusion and grain-boundary migration in Au-Cu bilayers during ion-irradiation

    International Nuclear Information System (INIS)

    Alexander, D.E.; Rehn, L.E.; Baldo, P.M.

    1991-11-01

    Ion irradiation and annealing experiments have been conducted on Au/Cu bilayer films to evaluate the effect of irradiation on diffusion-induced grain boundary migration (DIGM). The Au films were prepared with a large-grained microstructure with grain boundaries perpendicular to the film surface and extending through the film thickness. Irradiations were conducted with 1.5 MeV Kr at 228 degree C. Rutherford backscattering spectrometry of the samples revealed that interdiffusion was substantially enhanced in the irradiated area relative to the unirradiated area. Both irradiated and annealed-only areas were characterized by a nearly uniform composition of 14 at.% and 7 at.% Cu respectively through the entire thickness of the underlying Au film. Small probe X-ray energy dispersive spectroscopy showed significant lateral compositional homogeneities in both irradiated and annealed areas. These two results are consistent with previous observations of DIGM in the Au/Cu system, suggesting that this previously unexamined mechanism contributes to ion beam mixing

  15. Phase transformation induced by swift heavy ion irradiation of pure metals

    International Nuclear Information System (INIS)

    Dammak, H.; Dunlop, A.; Lesueur, D.

    1996-01-01

    It is now unambiguously established that high electronic energy deposition (HEED), obtained by swift heavy ion irradiation, plays an important role in the damage processes of pure metallic targets: (i) annealing of the defects created by elastic collisions in Fe, Nb, Ni and Pt, and (ii) creation of additional defects in Co, Fe, Ti and Zr. For Ti, we have recently evidenced by transmission electron microscopy observations that the damage creation by HEED is very important and leads to a phase transformation. Titanium evolves from the equilibrium hcp alpha-phase to the high pressure omega-phase. We studied the influence of three parameters on this phase transformation: ion fluence, electronic stopping power and irradiation temperature. The study of Ti and the results concerning other metals (Fe, Zr, etc.) and the semi-metal Bi allow us to propose criteria to predict in which metals HEED could induce damage: those which undergo a phase transformation under high pressure. As a matter of fact, beryllium is strongly damaged when submitted to HEED and seems to behave very similarly to titanium. The fact that such phase changes from a crystalline form to another form were only observed in those metals in which high pressure phases exist in the pressure-temperature diagram, strongly supports the Coulomb explosion model in which the generation of (i) a shock wave and (ii) collective atomic movements are invoked to account for the observed damage creation. (orig.)

  16. Effect of ion irradiation on the surface, structural and mechanical properties of brass

    Science.gov (United States)

    Ahmad, Shahbaz; Bashir, Shazia; Ali, Nisar; Umm-i-Kalsoom; Yousaf, Daniel; Faizan-ul-Haq; Naeem, Athar; Ahmad, Riaz; Khlaeeq-ur-Rahman, M.

    2014-04-01

    Modifications to the surface, structural and mechanical properties of brass after ion irradiation have been investigated. Brass targets were bombarded by carbon ions of 2 MeV energy from a Pelletron linear accelerator for various fluences ranging from 56 × 1012 to 26 × 1013 ions/cm2. A scanning electron microscope and X-ray diffractometer were utilized to analyze the surface morphology and crystallographic structure respectively. To explore the mechanical properties e.g., yield stress, ultimate tensile strength and microhardness of irradiated brass, an universal tensile testing machine and Vickers microhardness tester were used. Scanning electron microscopy results revealed an irregular and randomly distributed sputter morphology for a lower ion fluence. With increasing ion fluence, the incoherently shaped structures were transformed into dendritic structures. Nano/micro sized craters and voids, along with the appearance of pits, were observed at the maximum ion fluence. From X-ray diffraction results, no new phases were observed to be formed in the brass upon irradiation. However, a change in the peak intensity and higher and lower angle shifting were observed, which represents the generation of ion-induced defects and stresses. Analyses confirmed modifications in the mechanical properties of irradiated brass. The yield stress, ultimate tensile strength and hardness initially decreased and then increased with increasing ion fluence. The changes in the mechanical properties of irradiated brass are well correlated with surface and crystallographic modifications and are attributed to the generation, augmentation, recombination and annihilation of the ion-induced defects.

  17. Ion-irradiation-induced microstructural modifications in ferritic/martensitic steel T91

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Xiang; Miao, Yinbin; Li, Meimei; Kirk, Marquis A.; Maloy, Stuart A.; Stubbins, James F.

    2017-07-01

    In this paper, in situ transmission electron microscopy investigations were carried out to study the microstructural evolution of ferritic/martensitic steel T91 under 1 MeV Krypton ion irradiation up to 4.2 x 10(15) ions/cm(2) at 573 K, 673 K, and 773 K. At 573 K, grown-in defects are strongly modified by black dot loops, and dislocation networks together with black-dot loops were observed after irradiation. At 673 K and 773 K, grown-in defects are only partially modified by dislocation loops; isolated loops and dislocation segments were commonly found after irradiation. Post irradiation examination indicates that at 4.2 x 1015 ions/cm(2), about 51% of the loops were a(0)/2 < 111 > type for the 673 K irradiation, and the dominant loop type was a(0)< 100 > for the 773 K irradiation. Finally, a dispersed barrier hardening model was employed to estimate the change in yield strength, and the calculated ion data were found to follow the similar trend as the existing neutron data with an offset of 100-150 MPa. (C) 2017 Elsevier B.V. All rights reserved.

  18. Microstructural stability of a self-ion irradiated lanthana-bearing nanostructured ferritic steel

    International Nuclear Information System (INIS)

    Pasebani, Somayeh; Charit, Indrajit; Burns, Jatuporn; Price, Lloyd M.; M Univ., College Station, TX; Shao, Lin; M Univ., College Station, TX

    2015-01-01

    Thermally stable nanofeatures with high number density are expected to impart excellent high temperature strength and irradiation stability in nanostructured ferritic steels (NFSs) which have potential applications in advanced nuclear reactors. A lanthana-bearing NFS (14LMT) developed via mechanical alloying and spark plasma sintering was used in this study. The sintered samples were irradiated by Fe 2+ ions to 10, 50 and 100 dpa at 30 °C and 500 °C. Microstructural and mechanical characteristics of the irradiated samples were studied using different microscopy techniques and nanoindentation, respectively. Overall morphology and number density of the nanofeatures remained unchanged after irradiation. Average radius of nanofeatures in the irradiated sample (100 dpa at 500 °C) was slightly reduced. A notable level of irradiation hardening and enhanced dislocation activity occurred after ion irradiation except at 30 °C and ≥50 dpa. Other microstructural features like grain boundaries and high density of dislocations also provided defect sinks to assist in defect removal.

  19. Investigations on 40 MeV Li3+ ions irradiated GaN epilayers

    International Nuclear Information System (INIS)

    Suresh Kumar, V.; Kumar, J.; Kanjilal, D.; Asokan, K.; Mohanty, T.; Tripathi, A.; Rossi, Francisca; Zappettini, A.; Lazzarani, L.; Ferrari, C.

    2008-01-01

    The Metal Organic Chemical Vapour Deposition (MOCVD) grown n-type Gallium nitride (GaN) layers on sapphire (0 0 0 1) substrates have been irradiated at low and room temperatures with 40 MeV Li 3+ ions at the fluence of 1 x 10 13 ions cm -2 . Irradiated samples were characterised by using X-ray diffraction (XRD), photoluminescence (PL), Raman spectroscopy and atomic force microscopy (AFM). XRD results show that the formation of Ga 2 O 3 has been observed upon irradiation. This is due to interface mixing of GaN/Al 2 O 3 , at both temperatures. Also the GaN (0 0 0 2) peak splits into two at low temperature irradiation. PL measurements show a yellow emission band shift towards blue band side upon irradiation at 77 K. Raman studies indicate that the lattice disorder is high at room temperature irradiation compared to low temperature irradiation. AFM images indicate the increasing surface roughness after ion irradiation at room temperature when compared to pristine GaN and low temperature irradiated GaN. These observations are discussed in detail with the use of complementary techniques

  20. Viscous surface flow induced on Ti-based bulk metallic glass by heavy ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Kun [Key Laboratory of Microgravity (National Microgravity Laboratory), Institute of Mechanics, Chinese Academy of Sciences, Beijing 100190 (China); Hu, Zheng [Key Laboratory of Microgravity (National Microgravity Laboratory), Institute of Mechanics, Chinese Academy of Sciences, Beijing 100190 (China); Science and Technology on Vehicle Transmission Laboratory, China North Vehicle Research Institute, Beijing 100072 (China); Li, Fengjiang [Key Laboratory of Microgravity (National Microgravity Laboratory), Institute of Mechanics, Chinese Academy of Sciences, Beijing 100190 (China); Wei, Bingchen, E-mail: weibc@imech.ac.cn [Key Laboratory of Microgravity (National Microgravity Laboratory), Institute of Mechanics, Chinese Academy of Sciences, Beijing 100190 (China)

    2016-12-30

    Highlights: • Obvious smoothing and roughening phases on the Ti-based MG surface resulted, which correspond respectively to the normal and off-normal incidence angles. • Atomic force microscopy confirms two types of periodic ripples distributed evenly over the rough surface. • The irradiation-induced viscosity of MG is about 4×10{sup 12} Pa·s, which accords with the theoretical prediction for metallic glasses close to glass transition temperature. • Surface-confined viscous flow plays a dominant quantitative role, which is due to radiation-induced softening of the low-viscosity surface layer. - Abstract: Ti-based bulk metallic glass was irradiated by a 20 MeV Cl{sup 4+} ion beam under liquid-nitrogen cooling, which produced remarkable surface smoothing and roughening that respectively correspond to normal and off-normal incidence angles of irradiation. Atomic force microscopy confirms two types of periodic ripples distributed evenly over the rough glass surface. In terms of mechanism, irradiation-induced viscosity agrees with the theoretical prediction for metallic glasses near glass transition temperature. Here, a model is introduced, based on relaxation of confined viscous flow with a thin liquid-like layer, that explains both surface smoothing and ripple formation. This study demonstrates that bulk metallic glass has high morphological instability and low viscosity under ion irradiation, which assets can pave new paths for metallic glass applications.

  1. Microstructure evolution and hardness change in ordered Ni3V intermetallic alloy by energetic ion irradiation

    International Nuclear Information System (INIS)

    Hashimoto, A.; Kaneno, Y.; Semboshi, S.; Yoshizaki, H.; Saitoh, Y.; Okamoto, Y.; Iwase, A.

    2014-01-01

    Ni 3 V bulk intermetallic compounds with ordered D0 22 structure were irradiated with 16 MeV Au ions at room temperature. The irradiation induced phase transformation was examined by means of the transmission electron microscope (TEM), the extended X-ray absorption fine structure measurement (EXAFS) and the X-ray diffraction (XRD). We also measured the Vickers hardness for unirradiated and irradiated specimens. The TEM observation shows that by the Au irradiation, the lamellar microstructures and the super lattice spot in diffraction pattern for the unirradiated specimen disappeared. This TEM result as well as the result of XRD and EXAFS measurements means that the intrinsic D0 22 structure of Ni 3 V changes into the A1 (fcc) structure which is the lattice structure just below the melting point in the thermal equilibrium phase diagram. The lattice structure change from D0 22 to A1 (fcc) accompanies a remarkable decrease in Vickers microhardness. The change in crystal structure was discussed in terms of the thermal spike and the sequential atomic displacements induced by the energetic heavy ion irradiation

  2. Swift heavy ion irradiation of Cu-Zn-Al and Cu-Al-Ni alloys.

    Science.gov (United States)

    Zelaya, E; Tolley, A; Condo, A M; Schumacher, G

    2009-05-06

    The effects produced by swift heavy ions in the martensitic (18R) and austenitic phase (β) of Cu based shape memory alloys were characterized. Single crystal samples with a surface normal close to [210](18R) and [001](β) were irradiated with 200 MeV of Kr(15+), 230 MeV of Xe(15+), 350 and 600 MeV of Au(26+) and Au(29+). Changes in the microstructure were studied with transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). It was found that swift heavy ion irradiation induced nanometer sized defects in the 18R martensitic phase. In contrast, a hexagonal close-packed phase formed on the irradiated surface of β phase samples. HRTEM images of the nanometer sized defects observed in the 18R martensitic phase were compared with computer simulated images in order to interpret the origin of the observed contrast. The best agreement was obtained when the defects were assumed to consist of local composition modulations.

  3. Photoluminescence and reflectivity studies of high energy light ions irradiated polymethyl methacrylate films

    Science.gov (United States)

    Bharti, Madhu Lata; Singh, Fouran; Ramola, R. C.; Joshi, Veena

    2017-11-01

    The self-standing films of non-conducting polymethyl methacrylate (PMMA) were irradiated in vacuum using high energy light ions (HELIs) of 50 MeV Lithium (Li+3) and 80 MeV Carbon (C+5) at various ion dose to induce the optical changes in the films. Upon HELI irradiation, films exhibit a significant enhancement in optical reflectivity at the highest dose. Interestingly, the photoluminescence (PL) emission band with green light at (514.5 nm) shows a noticeable increase in the intensity with increasing ion dose for both ions. However, the rate of increase in PL intensity is different for both HELI and can be correlated with the linear energy transfer by these ions in the films. Origin of PL is attributed to the formation of carbon cluster and hydrogenated amorphous carbon in the polymer films. HAC clusters act as PL active centres with optical reflectivity. Most of the harmful radiation like UV are absorbed by the material and is becoming opaque after irradiation and this PL active material are useful in fabrication of optoelectronic devices, UV-filter, back-lit components in liquid crystal display systems, micro-components for integrate optical circuits, diffractive elements, advanced materials and are also applicable to the post irradiation laser treatment by means of ion irradiation.

  4. Fe+ ion irradiation induced changes in structural and magnetic properties of iron films

    Directory of Open Access Journals (Sweden)

    K. Papamihail

    2016-12-01

    Full Text Available 490keV Fe+ ion irradiation of 200nm thick Fe films was found to induce both structural and magnetic changes. Both, the lattice constant and the grain size increase as a function of dose and both properties follow the same power law. Irradiation induces a depth dependent magnetic profile consisting of two sublayers. The top Fe sublayer has a magnetic moment higher than that of the Fe before the irradiation whereas the bottom sublayer lower. The two sublayers are connected with the effects of Fe+ irradiation, i.e. the top sublayer with the depth in which mainly radiation damage occurs whereas the bottom one with the implantation of impinging Fe+ ions. The magnetic moments of the two sublayers have a non-monotonous variation with irradiation dose depicting a maximum for the top sublayer and a minimum for the bottom one at 96.2 dpa (‘displacements per atom’. The magnetic moment enhancement/reduction is discussed in relation with the atomic volume variation in the case of atom displacements and/or implantation effects.

  5. Si-nanoparticle synthesis using ion implantation and MeV ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Chulapakorn, T.; Wolff, M.; Primetzhofer, D.; Possnert, G. [Uppsala University, Department of Physics and Astronomy, P.O. Box 516, 751 20 Uppsala (Sweden); Sychugov, I.; Suvanam, S.S.; Linnros, J. [Royal Institute of Technology, School of Information and Communication Technology, P.O. Box Electrum 229, 164 40 Kista (Sweden); Hallen, A. [Uppsala University, Department of Physics and Astronomy, P.O. Box 516, 751 20 Uppsala (Sweden); Royal Institute of Technology, School of Information and Communication Technology, P.O. Box Electrum 229, 164 40 Kista (Sweden)

    2015-12-15

    A dielectric matrix with embedded Si-nanoparticles may show strong luminescence depending on nanoparticles size, surface properties, Si-excess concentration and matrix type. Ion implantation of Si ions with energies of a few tens to hundreds of keV in a SiO{sub 2} matrix followed by thermal annealing was identified as a powerful method to form such nanoparticles. The aim of the present work is to optimize the synthesis of Si-nanoparticles produced by ion implantation in SiO{sub 2} by employing MeV ion irradiation as an additional annealing process. The luminescence properties are measured by spectrally resolved photoluminescence including PL lifetime measurement, while X-ray reflectometry, atomic force microscopy and ion beam analysis are used to characterize the nanoparticle formation process. The results show that the samples implanted at 20%-Si excess atomic concentration display the highest luminescence and that irradiation of 36 MeV {sup 127}I ions affects the luminosity in terms of wavelength and intensity. It is also demonstrated that the nanoparticle luminescence lifetime decreases as a function of irradiation fluence. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  6. Occupant satisfaction with new low-energy houses

    DEFF Research Database (Denmark)

    Knudsen, Henrik Nellemose; Jensen, Ole Michael; Kristensen, Lars

    2012-01-01

    The development and the erection of low-energy buildings have been intensified in recent years. Still, there are only few studies of the energy performance and occupant satisfaction with living in low-energy houses. A questionnaire survey was therefore carried out among occupants of low-energy ho......The development and the erection of low-energy buildings have been intensified in recent years. Still, there are only few studies of the energy performance and occupant satisfaction with living in low-energy houses. A questionnaire survey was therefore carried out among occupants of low......-energy houses. The purpose was to study occupant satisfaction with new low-energy houses concerning i.a. the perceived indoor climate and the technical installations for heating and ventilation. The survey showed an overall satisfaction with the new low-energy houses, but also that there were problems...... occupant satisfaction in existing and future low-energy houses are given....

  7. Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications

    Energy Technology Data Exchange (ETDEWEB)

    Normand, P. E-mail: p.normand@imel.demokritos.gr; Kapetanakis, E.; Dimitrakis, P.; Skarlatos, D.; Beltsios, K.; Tsoukalas, D.; Bonafos, C.; Ben Assayag, G.; Cherkashin, N.; Claverie, A.; Berg, J.A. van den; Soncini, V.; Agarwal, A.; Ameen, M.; Perego, M.; Fanciulli, M

    2004-02-01

    An overview of recent developments regarding the fabrication and structure of thin silicon dioxide films with embedded nanocrystals through ultra-low-energy ion-beam-synthesis (ULE-IBS) is presented. Advances in fabrication, increased understanding of structure formation processes and ways to control them allow for the fabrication of reproducible and attractive silicon-nanocrystal memory devices for a wide-range of memory applications as herein demonstrated in the case of low-voltage EEPROM-like applications.

  8. Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications

    International Nuclear Information System (INIS)

    Normand, P.; Kapetanakis, E.; Dimitrakis, P.; Skarlatos, D.; Beltsios, K.; Tsoukalas, D.; Bonafos, C.; Ben Assayag, G.; Cherkashin, N.; Claverie, A.; Berg, J.A. van den; Soncini, V.; Agarwal, A.; Ameen, M.; Perego, M.; Fanciulli, M.

    2004-01-01

    An overview of recent developments regarding the fabrication and structure of thin silicon dioxide films with embedded nanocrystals through ultra-low-energy ion-beam-synthesis (ULE-IBS) is presented. Advances in fabrication, increased understanding of structure formation processes and ways to control them allow for the fabrication of reproducible and attractive silicon-nanocrystal memory devices for a wide-range of memory applications as herein demonstrated in the case of low-voltage EEPROM-like applications

  9. The irradiation hardening of Ni-Mo-Cr and Ni-W-Cr alloy under Xe26+ ion irradiation

    Science.gov (United States)

    Chen, Huaican; Hai, Yang; Liu, Renduo; Jiang, Li; Ye, Xiang-xi; Li, Jianjian; Xue, Wandong; Wang, Wanxia; Tang, Ming; Yan, Long; Yin, Wen; Zhou, Xingtai

    2018-04-01

    The irradiation hardening of Ni-Mo-Cr and Ni-W-Cr alloy was investigated. 7 MeV Xe26+ ion irradiation was performed at room temperature and 650 °C with peak damage dose from 0.05 to 10 dpa. With the increase of damage dose, the hardness of Ni-Mo-Cr and Ni-W-Cr alloy increases, and reaches saturation at damage dose ≥1 dpa. Moreover, the damage dose dependence of hardness in both alloys can be described by the Makin and Minter's equation, where the effective critical volume of obstacles can be used to represent irradiation hardening resistance of the alloys. Our results also show that Ni-W-Cr alloy has better irradiation hardening resistance than Ni-Mo-Cr alloy. This is ascribed to the fact that the W, instead of Mo in the alloy, can suppress the formation of defects under ion irradiation.

  10. Influence of He ions irradiation on the deuterium permeation and retention behavior in the CLF-1 steel

    International Nuclear Information System (INIS)

    Xu, Yu-Ping; Lu, Tao; Li, Xiao-Chun; Liu, Feng; Liu, Hao-Dong; Wang, Jing; An, Zhong-Qing; Ding, Fang; Hong, Suk-Ho; Zhou, Hai-Shan; Luo, Guang-Nan

    2016-01-01

    To evaluate the influence of He ions irradiation on the deuterium permeation and retention behavior in RAFM steels, samples made of the CLF-1 steel was irradiated with 3.5 MeV He ions. Gas driven permeation experiments were performed, and the permeability of virgin sample and pre-irradiated sample were obtained and compared. In order to characterize the effect of He ions irradiation on the deuterium retention behavior, deuterium gas exposure was carried out at 623 K, followed by thermal desorption spectra experiments. The total deuterium retention of the CLF-1 steel increased owing to He ions implantation, which could be attributed to the increase in trapping site for deuterium by the He pre-irradiation.

  11. Cladding-like waveguide fabricated by cooperation of ultrafast laser writing and ion irradiation: characterization and laser generation.

    Science.gov (United States)

    Lv, Jinman; Shang, Zhen; Tan, Yang; Vázquez de Aldana, Javier Rodríguez; Chen, Feng

    2017-08-07

    We report the surface cladding-like waveguide fabricated by the cooperation of the ultrafast laser writing and the ion irradiation. The ultrafast laser writes tracks near the surface of the Nd:YAG crystal, constructing a semi-circle columnar structure with a decreased refractive index of - 0.00208. Then, the Nd:YAG crystal is irradiated by the Carbon ion beam, forming an enhanced-well in the semi-circle columnar with an increased refractive index of + 0.0024. Tracks and the enhanced-well consisted a surface cladding-like waveguide. Utilizing this cladding-like waveguide as the gain medium for the waveguide lasing, optimized characterizations were observed compared with the monolayer waveguide. This work demonstrates the refractive index of the Nd:YAG crystal can be well tailored by the cooperation of the ultrafast laser writing and the ion irradiation, which provides an convenient way to fabricate the complex and multilayered photonics devices.

  12. A highly sensitive CaF{sub 2}:Dy nanophosphor as an efficient low energy ion dosimetry

    Energy Technology Data Exchange (ETDEWEB)

    Bhadane, Mahesh S.; Hareesh, K.; Dahiwale, S.S.; Sature, K.R. [Microtron Accelerator Laboratory, Department of Physics, Savitribai Phule Pune University, Pune 411007 (India); Patil, B.J. [Department of Physics, Abasaheb Garware College, Pune 411004 (India); Asokan, K.; Kanjilal, D. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Bhoraskar, V.N. [Microtron Accelerator Laboratory, Department of Physics, Savitribai Phule Pune University, Pune 411007 (India); Dhole, S.D., E-mail: sanjay@physics.unipune.ac.in [Microtron Accelerator Laboratory, Department of Physics, Savitribai Phule Pune University, Pune 411007 (India)

    2016-11-01

    Highlights: • CaF{sub 2}:Dy nanophosphor synthesized by chemical co-precipitation route. • Phosphors are irradiated by H, Ar and N low energy ions at different fluences. • LEBI irradiated phosphors are characterized by XRD, TEM, FTIR and PL spectroscopy. • First time report to LEIB irradiated for thermoluminescence dosimetric applications. - Abstract: Dysprosium doped calcium fluoride (CaF{sub 2}:Dy) powers synthesized by co-precipitation method were irradiated with low energy ion beams (LEIB) viz. 100 keV H, 200 keV Ar and 350 keV N beams at different fluences and demonstrated for low energy ion dosimetric application. X-ray Diffraction and Transmission electron microscopy revealed the formation of highly crystalline cubic structured particles with size ∼45–50 nm. FTIR spectra of the CaF{sub 2}:Dy samples show changes of some bonds such as N–O asymmetric, C–F bonding and C–H aromatic contain stretching mode after LEIB irradiation. The thermoluminescence (TL) glow curve peaks were observed at 207 °C for Ar ion, at 203 °C for H ion and at 216 °C and 270 °C for N ion. It has been found that CaF{sub 2}:Dy nanophosphor shows a linear response with minimum fading for all the ion species. Computerized Glow Curve Deconvolution was performed for TL curve of high fluence ion irradiated nanophosphor to estimate the trapping parameters and the respective figure of merit (FOM) found to be very appropriate for all the nanophosphor. These results indicated that the CaF{sub 2}:Dy can be used as a low energy ion detector or dose.

  13. Swift heavy ion irradiation effects on carbonyl and trans-vinylene groups in high and low density polyethylene

    International Nuclear Information System (INIS)

    Grosso, M.F. del; Chappa, V.C.; Arbeitman, C.R.; Garcia Bermudez, G.; Behar, M.

    2009-01-01

    In this work, we have studied the effects of swift heavy ion irradiation on the creation of new functional groups in high and low density polyethylene (HDPE and LDPE). Polymers were irradiated with different ions (6.77 MeV He and 47 MeV Li) and fluences. The induced changes were analyzed by Fourier transform infrared (FTIR) spectroscopy. Creation and damage cross sections for some groups were compared for two different types of PE.

  14. High energy (MeV) ion-irradiated π-conjugated polyaniline: Transition from insulating state to carbonized conducting state

    International Nuclear Information System (INIS)

    Park, S.K.; Lee, S.Y.; Lee, C.S.; Kim, H.M.; Joo, J.; Beag, Y.W.; Koh, S.K.

    2004-01-01

    High energy (MeV) C 2+ , F 2+ , and Cl 2+ ions were irradiated onto π-conjugated polyaniline emeraldine base (PAN-EB) samples. The energy of an ion beam was controlled to a range of 3-4.5 MeV, with the ion dosage varying from 1x10 12 to 1x10 16 ions/cm 2 . The highest dc conductivity (σ dc ) at room temperature was measured to be ∼60 S/cm for 4.5 MeV Cl 2+ ion-irradiated PAN-EB samples with a dose of 1x10 16 ions/cm 2 . We observed the transition of high energy ion-irradiated PAN-EB samples from insulating state to conducting state as a function of ion dosage based on σ dc and its temperature dependence. The characteristic peaks of the Raman spectrum of the PAN-EB samples were reduced, while the D-peak (disordered peak) and the G peak (graphitic peak) appeared as the ion dose increased. From the analysis of the D and G peaks of the Raman spectra of the systems compared to multiwalled carbon nanotubes, ion-irradiated graphites, and annealed carbon films, the number of the clusters of hexagon rings with conducting sp 2 -bonded carbons increased with ion dosage. We also observed the increase in the size of the nanocrystalline graphitic domain of the systems with increasing ion dosage. The intensity of normalized electron paramagnelic resonance signal also increased in correlation with ion dose. The results of this study demonstrate that π-conjugated pristine PAN-EB systems changed from insulating state to carbonized conducting state through high energy ion irradiation with high ion dosage

  15. High energy ion irradiation effects on polymer materials. LET dependence of G value of scission of polymethylmethacrylate (PMMA)

    Energy Technology Data Exchange (ETDEWEB)

    Kudoh, H; Sasuga, T; Seguchi, T [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment

    1997-03-01

    Linear energy transfer (LET) dependence on the probability of main chain scission of polymethylmethacrylate (PMMA) was investigated. The probability was obtained from decreases in molecular weight measured by the gel permeation chromatography (GPC), and LET was evaluated by TRIM code. The scission probability as a function of LET was almost constant in the low LET, and decreased in the high LET ion irradiation. The mechanism was interpreted from the model of spur-overlapping along an ion`s path. (author)

  16. Swift heavy ion irradiation effects on carbonyl and trans-vinylene groups in high and low density polyethylene

    Energy Technology Data Exchange (ETDEWEB)

    Grosso, M.F. del, E-mail: delgrosso@tandar.cnea.gov.a [Gerencia de Investigacion y Aplicaciones, TANDAR-CNEA (Argentina); Chappa, V.C. [Gerencia de Investigacion y Aplicaciones, TANDAR-CNEA (Argentina); CONICET (Argentina); Arbeitman, C.R. [Gerencia de Investigacion y Aplicaciones, TANDAR-CNEA (Argentina); Garcia Bermudez, G. [Gerencia de Investigacion y Aplicaciones, TANDAR-CNEA (Argentina); CONICET (Argentina); Escuela de Ciencia y Tecnologia, UNSAM (Argentina); Behar, M. [Instituto de Fisica, UFRGS, Porto Alegre (Brazil)

    2009-10-01

    In this work, we have studied the effects of swift heavy ion irradiation on the creation of new functional groups in high and low density polyethylene (HDPE and LDPE). Polymers were irradiated with different ions (6.77 MeV He and 47 MeV Li) and fluences. The induced changes were analyzed by Fourier transform infrared (FTIR) spectroscopy. Creation and damage cross sections for some groups were compared for two different types of PE.

  17. Effects of sintering additives on the microstructural and mechanical properties of the ion-irradiated SiCf/SiC

    Science.gov (United States)

    Fitriani, Pipit; Sharma, Amit Siddharth; Yoon, Dang-Hyok

    2018-05-01

    SiCf/SiC composites containing three different types of sintering additives viz. Sc-nitrate, Al2O3-Sc2O3, and Al2O3-Y2O3, were subjected to ion irradiation using 0.2 MeV H+ ions with a fluence of 3 × 1020 ions/m2 at room temperature. Although all composites showed volumetric swelling upon ion irradiation, SiCf/SiC with Sc-nitrate showed the smallest change followed by those with the Al2O3-Sc2O3 and Al2O3-Y2O3 additives. In particular, SiCf/SiC containing the conventional Al2O3-Y2O3 additive revealed significant microstructural changes, such as surface roughening and the formation of cracks and voids, resulting in reduced fiber pullout upon irradiation. On the other hand, the SiCf/SiC with Sc-nitrate showed the highest resistance against ion irradiation without showing any macroscopic changes in surface morphology and mechanical strength, indicating the importance of the sintering additive in NITE-based SiCf/SiC for nuclear structural applications.

  18. Phenomenological understanding of dewetting and embedding of noble metal nanoparticles in thin films induced by ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Prakash, Jai, E-mail: jai.gupta1983@gmail.com [Department of Chemistry, MMH College (Ch. Charan Singh University Meerut), Ghaiziabad 201001 (India); Chemical Physics of Materials, Université Libre de Bruxelles, Campus de la Plaine, CP 243, B-1050 Bruxelles (Belgium); Tripathi, A. [Inter University Accelerator Centre, Aruna Asif Ali Marg, New Delhi 110067 (India); Gautam, Sanjeev; Chae, K.H.; Song, Jonghan [Advanced Analysis Center, Korea Institute of Science and Technology, Seoul 136–791 (Korea, Republic of); Rigato, V. [INFN Laboratori Nazionali di Legnaro, Via Romea. 4, 35020 Legnaro, Padova (Italy); Tripathi, Jalaj [Department of Chemistry, MMH College (Ch. Charan Singh University Meerut), Ghaiziabad 201001 (India); Asokan, K. [Inter University Accelerator Centre, Aruna Asif Ali Marg, New Delhi 110067 (India)

    2014-10-15

    The present experimental work provides the phenomenological approach to understand the dewetting in thin noble metal films with subsequent formation of nanoparticles (NPs) and embedding of NPs induced by ion irradiation. Au/polyethyleneterepthlate (PET) bilayers were irradiated with 150 keV Ar ions at varying fluences and were studied using scanning electron microscopy (SEM) and cross-sectional transmission electron microscopy (X-TEM). Thin Au film begins to dewet from the substrate after irradiation and subsequent irradiation results in spherical nanoparticles on the surface that at a fluence of 5 × 10{sup 16} ions/cm{sup 2} become embedded into the substrate. In addition to dewetting in thin films, synthesis and embedding of metal NPs by ion irradiation, the present article explores fundamental thermodynamic principles that govern these events systematically under the effect of irradiation. The results are explained on the basis of ion induced sputtering, thermal spike inducing local melting and of thermodynamic driving forces by minimization of the system free energy where contributions of surface and interfacial energies are considered with subsequent ion induced viscous flow in substrate. - Highlights: • Phenomenological interpretation of dewetting and embedding of metal NPs in thin film. • Exploring fundamental thermodynamic principles under influence of ion irradiation. • Ion induced surface/interface microstructural changes using SEM/X-TEM. • Ion induced sputtering, thermal spike induced local melting. • Thermodynamic driving forces relate to surface and interfacial energies.

  19. In situ study of the effects of heavy-ion irradiation on co-evaporated CoSi2 films

    International Nuclear Information System (INIS)

    Allen, C.W.; Smith, D.A.

    1990-11-01

    The in situ ion irradiation capability of Argonne's HVEM-Tandem User Facility has been employed to determine the effects of 1.5 MeV Kr + irradiation and 300 kV electron irradiation on the crystallization of as-deposited and of partially crystallized 40 nm thick films of CoSi 2 . Ion fluxes ranged from 8.5 x 10 14 to 6.8 x 10 15 m -2 s -1 for which beam heating effects may be neglected. The maximum electron flux at 300 kV was 0.8 x 10 23 m -2 s -1 . The maximum temperature at which crystalline CoSi 2 is amorphized by the ion irradiation of flux = 6.8 x 10 15 m -2 s -1 is between 250 and 280 K. At higher temperatures amorphous material crystallizes by growth of any preexisting crystals and by classical nucleation and growth, with radial growth rates which are proportional to ion flux. The average degree of transformation per ion is 4 x 10 -26 m 3 per ion. Thermally induced crystallization of as-deposited films occurs above approximately 420 K. For ion doses at least as low as 3.4 x 10 16 m -2 ion irradiation at 300 K promotes thermal crystallization at 450 K, by virtue of enhanced apparant nucleation and at large doses, by enhanced growth rate. 8 refs., 2 figs

  20. Effects of tube diameter and chirality on the stability of single-walled carbon nanotubes under ion irradiation

    International Nuclear Information System (INIS)

    Xu Zijian; Zhang Wei; Zhu Zhiyuan; Ren Cuilan; Li Yong; Huai Ping

    2009-01-01

    Using molecular dynamics method, we investigated the influence of tube diameter and chirality on the stability of single-walled carbon nanotubes (CNTs) under ion irradiation. We found that in the energy range below 1 keV, the dependence of CNT stability on the tube diameter is no longer monotonic under C ion irradiation, and the thinner (5, 5) CNT may be more stable than the thicker (7, 7) CNT, while under Ar irradiation, the CNT stability increases still monotonically with the CNT diameter. This stability behavior was further verified by the calculations of the threshold ion energies to produce displacement damage in CNTs. The abnormal stability of thin CNTs is related to their resistance to the instantaneous deformation in the wall induced by ion pushing, the high self-healing capacity, as well as the different interaction properties of C and Ar ions with CNT atoms. We also found that under ion irradiation the stability of a zigzag CNT is better than that of an armchair CNT with the same diameter. This is because of the bonding structure difference between the armchair and the zigzag CNTs with respect to the orientations of graphitic networks as well as the self-healing capacity difference.