Engineering charge transport by heterostructuring solution-processed semiconductors

Science.gov (United States)

Voznyy, Oleksandr; Sutherland, Brandon R.; Ip, Alexander H.; Zhitomirsky, David; Sargent, Edward H.

2017-06-01

Solution-processed semiconductor devices are increasingly exploiting heterostructuring — an approach in which two or more materials with different energy landscapes are integrated into a composite system. Heterostructured materials offer an additional degree of freedom to control charge transport and recombination for more efficient optoelectronic devices. By exploiting energetic asymmetry, rationally engineered heterostructured materials can overcome weaknesses, augment strengths and introduce emergent physical phenomena that are otherwise inaccessible to single-material systems. These systems see benefit and application in two distinct branches of charge-carrier manipulation. First, they influence the balance between excitons and free charges to enhance electron extraction in solar cells and photodetectors. Second, they promote radiative recombination by spatially confining electrons and holes, which increases the quantum efficiency of light-emitting diodes. In this Review, we discuss advances in the design and composition of heterostructured materials, consider their implementation in semiconductor devices and examine unexplored paths for future advancement in the field.

Interlayer electron-hole pair multiplication by hot carriers in atomic layer semiconductor heterostructures

Science.gov (United States)

Barati, Fatemeh; Grossnickle, Max; Su, Shanshan; Lake, Roger; Aji, Vivek; Gabor, Nathaniel

Two-dimensional heterostructures composed of atomically thin transition metal dichalcogenides provide the opportunity to design novel devices for the study of electron-hole pair multiplication. We report on highly efficient multiplication of interlayer electron-hole pairs at the interface of a tungsten diselenide / molybdenum diselenide heterostructure. Electronic transport measurements of the interlayer current-voltage characteristics indicate that layer-indirect electron-hole pairs are generated by hot electron impact excitation. Our findings, which demonstrate an efficient energy relaxation pathway that competes with electron thermalization losses, make 2D semiconductor heterostructures viable for a new class of hot-carrier energy harvesting devices that exploit layer-indirect electron-hole excitations. SHINES, an Energy Frontier Research Center funded by the U.S. Department of Energy, Air Force Office of Scientific Research.

Electron-hole liquid in semiconductors and low-dimensional structures

Science.gov (United States)

Sibeldin, N. N.

2017-11-01

The condensation of excitons into an electron-hole liquid (EHL) and the main EHL properties in bulk semiconductors and low-dimensional structures are considered. The EHL properties in bulk materials are discussed primarily in qualitative terms based on the experimental results obtained for germanium and silicon. Some of the experiments in which the main EHL thermodynamic parameters (density and binding energy) have been obtained are described and the basic factors that determine these parameters are considered. Topics covered include the effect of external perturbations (uniaxial strain and magnetic field) on EHL stability; phase diagrams for a nonequilibrium exciton-gas-EHL system; information on the size and concentration of electron-hole drops (EHDs) under various experimental conditions; the kinetics of exciton condensation and of recombination in the exciton-gas-EHD system; dynamic EHD properties and the motion of EHDs under the action of external forces; the properties of giant EHDs that form in potential wells produced by applying an inhomogeneous strain to the crystal; and effects associated with the drag of EHDs by nonequilibrium phonons (phonon wind), including the dynamics and formation of an anisotropic spatial structure of the EHD cloud. In discussing EHLs in low-dimensional structures, a number of studies are reviewed on the observation and experimental investigation of phenomena such as spatially indirect (dipolar) electron-hole and exciton (dielectric) liquids in GaAs/AlGaAs structures with double quantum wells (QWs), EHDs containing only a few electron-hole pairs (dropletons), EHLs in type-I silicon QWs, and spatially direct and dipolar EHLs in type-II silicon-germanium heterostructures.

Two-dimensional Semiconductor-Superconductor Hybrids

DEFF Research Database (Denmark)

Suominen, Henri Juhani

This thesis investigates hybrid two-dimensional semiconductor-superconductor (Sm-S) devices and presents a new material platform exhibiting intimate Sm-S coupling straight out of the box. Starting with the conventional approach, we investigate coupling superconductors to buried quantum well....... To overcome these issues we integrate the superconductor directly into the semiconducting material growth stack, depositing it in-situ in a molecular beam epitaxy system under high vacuum. We present a number of experiments on these hybrid heterostructures, demonstrating near unity interface transparency...

OPENING ADDRESS: Heterostructures in Semiconductors

Science.gov (United States)

Grimmeiss, Hermann G.

1996-01-01

Good morning, Gentlemen! On behalf of the Nobel Foundation, I should like to welcome you to the Nobel Symposium on "Heterostructures in Semiconductors". It gives me great pleasure to see so many colleagues and old friends from all over the world in the audience and, in particular, to bid welcome to our Nobel laureates, Prof. Esaki and Prof. von Klitzing. In front of a different audience I would now commend the scientific and technological importance of heterostructures in semiconductors and emphatically emphasise that heterostructures, as an important contribution to microelectronics and, hence, information technology, have changed societies all over the world. I would also mention that information technology is one of the most important global key industries which covers a wide field of important areas each of which bears its own character. Ever since the invention of the transistor, we have witnessed a fantastic growth in semiconductor technology, leading to more complex functions and higher densities of devices. This development would hardly be possible without an increasing understanding of semiconductor materials and new concepts in material growth techniques which allow the fabrication of previously unknown semiconductor structures. But here and today I will not do it because it would mean to carry coals to Newcastle. I will therefore not remind you that heterostructures were already suggested and discussed in detail a long time before proper technologies were available for the fabrication of such structures. Now, heterostructures are a foundation in science and part of our everyday life. Though this is certainly true, it is nevertheless fair to say that not all properties of heterostructures are yet understood and that further technologies have to be developed before a still better understanding is obtained. The organisers therefore hope that this symposium will contribute not only to improving our understanding of heterostructures but also to opening new

Electronic and optical properties of diamond/organic semiconductor heterostructures

Energy Technology Data Exchange (ETDEWEB)

Gajewski, Wojciech; Garrido, Jose; Niedermeier, Martin; Stutzmann, Martin [Walter Schottky Institute, TU Muenchen, Am Coulombwall 3, 85748 Garching (Germany); Williams, Oliver; Haenen, Ken [Institute for Materials Research, University of Hasselt, Wetenschapspark 1, BE-3590 Diepenbeek (Belgium)

2007-07-01

Different diamond substrates (single crystalline: SCD, poly-crystalline: PCD and nano-crystalline: NCD) were used to investigate the electronic and optical properties of the diamond/organic semiconductor heterostructures. Layers of a poly[ethynyl-(2-decyloxy-5methoxy)benzene] - PEB, pentacene and 4-nitro-biphenyl-4-diazonium cations - Ph-Ph-NO{sub 2} were prepared by spin coating, thermal evaporation and grafting, respectively. The measurements of the electronic transport along the organic layer were performed using a Hg probe as well as Hall effect measurements in the temperature range 70-400 K. The I-V characteristics of the B-doped diamond/organic semiconductor heterostructures were measured at room temperature by means of the Hg probe. Undoped IIa and undoped PCD films were used for a study of the optical and optoelectronic properties of prepared heterostructures. The influence of the organic layer homogeneity and layer thickness on the optical properties will be discussed. Furthermore, preliminary data on perpendicular and parallel transport in the heterostructures layer will be reported.

Surface Plasmon Polariton-Assisted Long-Range Exciton Transport in Monolayer Semiconductor Lateral Heterostructure

Science.gov (United States)

Shi, Jinwei; Lin, Meng-Hsien; Chen, Yi-Tong; Estakhri, Nasim Mohammadi; Tseng, Guo-Wei; Wang, Yanrong; Chen, Hung-Ying; Chen, Chun-An; Shih, Chih-Kang; Alã¹, Andrea; Li, Xiaoqin; Lee, Yi-Hsien; Gwo, Shangjr

Recently, two-dimensional (2D) semiconductor heterostructures, i.e., atomically thin lateral heterostructures (LHSs) based on transition metal dichalcogenides (TMDs) have been demonstrated. In an optically excited LHS, exciton transport is typically limited to a rather short spatial range ( 1 micron). Furthermore, additional losses may occur at the lateral interfacial regions. Here, to overcome these challenges, we experimentally implement a planar metal-oxide-semiconductor (MOS) structure by placing a monolayer of WS2/MoS2 LHS on top of an Al2O3 capped Ag single-crystalline plate. We found that the exciton transport range can be extended to tens of microns. The process of long-range exciton transport in the MOS structure is confirmed to be mediated by an exciton-surface plasmon polariton-exciton conversion mechanism, which allows a cascaded energy transfer process. Thus, the planar MOS structure provides a platform seamlessly combining 2D light-emitting materials with plasmonic planar waveguides, offering great potential for developing integrated photonic/plasmonic functionalities.

Low-voltage organic electronics based on a gate-tunable injection barrier in vertical graphene-organic semiconductor heterostructures.

Science.gov (United States)

Hlaing, Htay; Kim, Chang-Hyun; Carta, Fabio; Nam, Chang-Yong; Barton, Rob A; Petrone, Nicholas; Hone, James; Kymissis, Ioannis

2015-01-14

The vertical integration of graphene with inorganic semiconductors, oxide semiconductors, and newly emerging layered materials has recently been demonstrated as a promising route toward novel electronic and optoelectronic devices. Here, we report organic thin film transistors based on vertical heterojunctions of graphene and organic semiconductors. In these thin heterostructure devices, current modulation is accomplished by tuning of the injection barriers at the semiconductor/graphene interface with the application of a gate voltage. N-channel devices fabricated with a thin layer of C60 show a room temperature on/off ratio >10(4) and current density of up to 44 mAcm(-2). Because of the ultrashort channel intrinsic to the vertical structure, the device is fully operational at a driving voltage of 200 mV. A complementary p-channel device is also investigated, and a logic inverter based on two complementary transistors is demonstrated. The vertical integration of graphene with organic semiconductors via simple, scalable, and low-temperature fabrication processes opens up new opportunities to realize flexible, transparent organic electronic, and optoelectronic devices.

Imaging the motion of electrons in 2D semiconductor heterostructures

Science.gov (United States)

Dani, Keshav

Technological progress since the late 20th century has centered on semiconductor devices, such as transistors, diodes, and solar cells. At the heart of these devices, is the internal motion of electrons through semiconductor materials due to applied electric fields or by the excitation of photocarriers. Imaging the motion of these electrons would provide unprecedented insight into this important phenomenon, but requires high spatial and temporal resolution. Current studies of electron dynamics in semiconductors are generally limited by the spatial resolution of optical probes, or by the temporal resolution of electronic probes. In this talk, we combine femtosecond pump-probe techniques with spectroscopic photoemission electron microscopy to image the motion of photoexcited electrons from high-energy to low-energy states in a 2D InSe/GaAs heterostructure exhibiting a type-II band alignment. At the instant of photoexcitation, energy-resolved photoelectron images reveal a highly non-equilibrium distribution of photocarriers in space and energy. Thereafter, in response to the out-of-equilibrium photocarriers, we observe the spatial redistribution of charges, thus forming internal electric fields, bending the semiconductor bands, and finally impeding further charge transfer. By assembling images taken at different time-delays, we make a movie lasting a few tens of picoseconds of the electron transfer process in the photoexcited type-II heterostructure - a fundamental phenomenon in semiconductor devices like solar cells. Quantitative analysis and theoretical modeling of spatial variations in the video provide insight into future solar cells, electron dynamics in 2D materials, and other semiconductor devices.

Two-dimensional epitaxial superconductor-semiconductor heterostructures: A platform for topological superconducting networks

OpenAIRE

Shabani, J.; Kjaergaard, M.; Suominen, H. J.; Kim, Younghyun; Nichele, F.; Pakrouski, K.; Stankevic, T.; Lutchyn, R. M.; Krogstrup, P.; Feidenhans'l, R.; Kraemer, S.; Nayak, C.; Troyer, M.; Marcus, C. M.; Palmstrøm, C. J.

2015-01-01

Progress in the emergent field of topological superconductivity relies on synthesis of new material combinations, combining superconductivity, low density, and spin-orbit coupling (SOC). For example, theory [1-4] indicates that the interface between a one-dimensional (1D) semiconductor (Sm) with strong SOC and a superconductor (S) hosts Majorana modes with nontrivial topological properties [5-8]. Recently, epitaxial growth of Al on InAs nanowires was shown to yield a high quality S-Sm system ...

Spin Transport in Semiconductor heterostructures

International Nuclear Information System (INIS)

Marinescu, Domnita Catalina

2011-01-01

The focus of the research performed under this grant has been the investigation of spin transport in magnetic semiconductor heterostructures. The interest in these systems is motivated both by their intriguing physical properties, as the physical embodiment of a spin-polarized Fermi liquid, as well as by their potential applications as spintronics devices. In our work we have analyzed several different problems that affect the spin dynamics in single and bi-layer spin-polarized two-dimensional (2D) systems. The topics of interests ranged from the fundamental aspects of the electron-electron interactions, to collective spin and charge density excitations and spin transport in the presence of the spin-orbit coupling. The common denominator of these subjects is the impact at the macroscopic scale of the spin-dependent electron-electron interaction, which plays a much more subtle role than in unpolarized electron systems. Our calculations of several measurable parameters, such as the excitation frequencies of magneto-plasma modes, the spin mass, and the spin transresistivity, propose realistic theoretical estimates of the opposite-spin many-body effects, in particular opposite-spin correlations, that can be directly connected with experimental measurements.

Two-Dimensional Electron Gas at SrTiO3-Based Oxide Heterostructures via Atomic Layer Deposition

Directory of Open Access Journals (Sweden)

Sang Woon Lee

2016-01-01

Full Text Available Two-dimensional electron gas (2DEG at an oxide interface has been attracting considerable attention for physics research and nanoelectronic applications. Early studies reported the formation of 2DEG at semiconductor interfaces (e.g., AlGaAs/GaAs heterostructures with interesting electrical properties such as high electron mobility. Besides 2DEG formation at semiconductor junctions, 2DEG was realized at the interface of an oxide heterostructure such as the LaAlO3/SrTiO3 (LAO/STO heterojunction. The origin of 2DEG was attributed to the well-known “polar catastrophe” mechanism in oxide heterostructures, which consist of an epitaxial LAO layer on a single crystalline STO substrate among proposed mechanisms. Recently, it was reported that the creation of 2DEG was achieved using the atomic layer deposition (ALD technique, which opens new functionality of ALD in emerging nanoelectronics. This review is focused on the origin of 2DEG at oxide heterostructures using the ALD process. In particular, it addresses the origin of 2DEG at oxide interfaces based on an alternative mechanism (i.e., oxygen vacancies.

Novel engineered compound semiconductor heterostructures for advanced electronics applications

Science.gov (United States)

Stillman, Gregory E.; Holonyak, Nick, Jr.; Coleman, James J.

1992-06-01

To provide the technology base that will enable SDIO capitalization on the performance advantages offered through novel engineered multiple-lavered compound semiconductor structures, this project has focussed on three specific areas: (1) carbon doping of AlGaAs/GaAs and InP/InGaAs materials for reliable high frequency heterojunction bipolar transistors; (2) impurity induced layer disordering and the environmental degradation of AlxGal-xAs-GaAs quantum-well heterostructures and the native oxide stabilization of AlxGal-xAs-GaAs quantum well heterostructure lasers; and (3) non-planar and strained-layer quantum well heterostructure lasers and laser arrays. The accomplishments in this three year research are reported in fifty-six publications and the abstracts included in this report.

Experimental study on the spin-orbit coupling property in low-dimensional semiconductor structures

International Nuclear Information System (INIS)

Zhao, Hongming

2010-01-01

The spin-orbit coupling and optical properties have been studied in several low-dimensional semiconductor structures. First, the spin dynamics in (001) GaAs/AlGaAs two-dimensional electron gas was investigated by time resolved Kerr rotation technique under a transverse magnetic field. The in-plane spin lifetime is found to be anisotropic. The results show that the electron density in two-dimensional electron gas channel strongly affects the Rashba spin-orbit coupling. Then, a large anisotropy of the magnitude of in-plane conduction electron g factor in asymmetric (001) GaAs/AlGaAs QWs was observed and its tendency of temperature dependence was studied. Second, the experimental study of the in-plane-orientation dependent spin splitting in the C(0001) GaN/AlGaN two-dimensional electron gas at room temperature was reported. The measurement of circular photo-galvanic effect current clearly shows the isotropic in-plane spin splitting in this system for the first time. Third, the first measurement of conduction electron g factor in GaAsN at room temperature was done by using time resolved Kerr rotation technique. It demonstrates that the g factor can be modified drastically by introducing a small amount of nitrogen in GaAs bulk. Finally, the optical characteristic of indirect type II transition in a series of size and shape-controlled linear CdTe/CdSe/CdTe heterostructure nano-rods was studied by steady-state and time resolved photoluminescence. Results show the steady transfer from the direct optical transition (type I) within CdSe to the indirect transition (type II) between CdSe/CdTe as the length of the nano-rods increases. (author)

Wannier-Frenkel hybrid exciton in organic-semiconductor quantum dot heterostructures

International Nuclear Information System (INIS)

Birman, Joseph L.; Huong, Nguyen Que

2007-01-01

The formation of a hybridization state of Wannier Mott exciton and Frenkel exciton in different hetero-structure configurations involving quantum dots is investigated. The hybrid excitons exist at the interfaces of the semiconductors quantum dots and the organic medium, having unique properties and a large optical non-linearity. The coupling at resonance is very strong and tunable by changing the parameters of the systems (dot radius, dot-dot distance, generation of the organic dendrites and the materials of the system etc...). Different semiconductor quantum dot-organic material combination systems have been considered such as a semiconductor quantum dot lattice embedded in an organic host, a semiconductor quantum dot at the center of an organic dendrite, a semiconductor quantum dot coated by an organic shell

Majorana zero modes in superconductor-semiconductor heterostructures

Science.gov (United States)

Lutchyn, R. M.; Bakkers, E. P. A. M.; Kouwenhoven, L. P.; Krogstrup, P.; Marcus, C. M.; Oreg, Y.

2018-05-01

Realizing topological superconductivity and Majorana zero modes in the laboratory is a major goal in condensed-matter physics. In this Review, we survey the current status of this rapidly developing field, focusing on proposals for the realization of topological superconductivity in semiconductor-superconductor heterostructures. We examine materials science progress in growing InAs and InSb semiconductor nanowires and characterizing these systems. We then discuss the observation of robust signatures of Majorana zero modes in recent experiments, paying particular attention to zero-bias tunnelling conduction measurements and Coulomb blockade experiments. We also outline several next-generation experiments probing exotic properties of Majorana zero modes, including fusion rules and non-Abelian exchange statistics. Finally, we discuss prospects for implementing Majorana-based topological quantum computation.

Magnetotransport investigations of single- and heterostructure epitaxial films of IV/VI-semiconductors

International Nuclear Information System (INIS)

Ambrosch, K.-E.

1985-01-01

Lead salts are small gap semiconductors that are used for infrared detectors and lasers. PbMnTe and PbEuTe are semimagnetic semiconductors. Magnetotransport properties of epitaxial films and epitaxial heterostructures (PbTe / PbSnTe) are investigated. Epitaxial films of PbSnTe, PbMnTe and PbEuTe have been used for Shubnikov de Haas - experiments in tilted magnetic fields. This method allows the quantitative determination of the electric carrier distribution with respect to the crystal directions. The nonequal distribution is caused by strain effects that are more important for PbMnTe than for PbSnTe and PbEuTe. Magnetoresistance experiments show a deviation from cubic symmetry that leads to the same results for the carrier distribution as the Shubnikov de Haas effect. Magnetoresistance experiments performed with PbTe / PbSnTe heterostructures show no megnetoresistance if the magnetic field is in plane with the layers. The difference of the magnetoresistance for single films and heterostructures is explained by 'quasitwodimensional' carriers. Shubnikov de Haas experiments performed on heterostructures as a function of the tilt angle of the magnetic field show different behaviour compared to that of single films. Using additional information about effective masses and strain it was possible to distinguish between 'two-' and 'threedimensional' electronic systems. The distribution of carriers in single films and heterostructures has been determined by means of magnetotransport experiments. The results are explained by strain effects of the crystal lattice. In addition heterostructures show a 'quasitwodimensional' behaviour caused by interaction of their layers. (Author)

Analysis of quantum semiconductor heterostructures by ballistic electron emission spectroscopy

Science.gov (United States)

Guthrie, Daniel K.

1998-09-01

The microelectronics industry is diligently working to achieve the goal of gigascale integration (GSI) by early in the 21st century. For the past twenty-five years, progress toward this goal has been made by continually scaling down device technology. Unfortunately, this trend cannot continue to the point of producing arbitrarily small device sizes. One possible solution to this problem that is currently under intensive study is the relatively new area of quantum devices. Quantum devices represent a new class of microelectronic devices that operate by utilizing the wave-like nature (reflection, refraction, and confinement) of electrons together with the laws of quantum mechanics to construct useful devices. One difficulty associated with these structures is the absence of measurement techniques that can fully characterize carrier transport in such devices. This thesis addresses this need by focusing on the study of carrier transport in quantum semiconductor heterostructures using a relatively new and versatile measurement technique known as ballistic electron emission spectroscopy (BEES). To achieve this goal, a systematic approach that encompasses a set of progressively more complex structures is utilized. First, the simplest BEES structure possible, the metal/semiconductor interface, is thoroughly investigated in order to provide a foundation for measurements on more the complex structures. By modifying the semiclassical model commonly used to describe the experimental BEES spectrum, a very complete and accurate description of the basic structure has been achieved. Next, a very simple semiconductor heterostructure, a Ga1-xAlxAs single-barrier structure, was measured and analyzed. Low-temperature measurements on this structure were used to investigate the band structure and electron-wave interference effects in the Ga1-xAlxAs single barrier structure. These measurements are extended to a simple quantum device by designing, measuring, and analyzing a set of

Controlled fabrication of semiconductor-metal hybrid nano-heterostructures via site-selective metal photodeposition

Science.gov (United States)

Vela Becerra, Javier; Ruberu, T. Purnima A.

2017-12-05

A method of synthesizing colloidal semiconductor-metal hybrid heterostructures is disclosed. The method includes dissolving semiconductor nanorods in a solvent to form a nanorod solution, and adding a precursor solution to the nanorod solution. The precursor solution contains a metal. The method further includes illuminating the combined precursor and nanorod solutions with light of a specific wavelength. The illumination causes the deposition of the metal in the precursor solution onto the surface of the semiconductor nanorods.

Heterostructured TiO2/NiTiO3 Nanorod Arrays for Inorganic Sensitized Solar Cells with Significantly Enhanced Photovoltaic Performance and Stability.

Science.gov (United States)

Li, Yue-Ying; Wang, Jian-Gan; Sun, Huan-Huan; Wei, Bingqing

2018-04-11

Organic dyes used in the conventional dye-sensitized solar cells (DSSCs) suffer from poor light stability and high cost. In this work, we demonstrate a new inorganic sensitized solar cell based on ordered one-dimensional semiconductor nanorod arrays of TiO 2 /NiTiO 3 (NTO) heterostructures prepared via a facile two-step hydrothermal approach. The semiconductor heterostructure arrays are highly desirable and promising for DSSCs because of their direct charge transport capability and slow charge recombination rate. The low-cost NTO inorganic semiconductor possesses an appropriate band gap that matches well with TiO 2 , which behaves like a "dye" to enable efficient light harvesting and fast electron-hole separation. The solar cells constructed by the ordered TiO 2 /NTO heterostructure photoanodes show a significantly improved power conversion efficiency, high fill factor, and more promising, outstanding life stability. The present work will open up an avenue to design heterostructured inorganics for high-performance solar cells.

About possible mechanisms of current transfer in the bio-polymer - semiconductor heterostructure

International Nuclear Information System (INIS)

Pavlov, A.A.; Dosmailov, M.A.; Karibaeva, M.K.; Kenshinbaev, N.K.; Kokanbaev, M.; Uristembekov, B.B.; Tynyshtykbaev, K.B.

2003-01-01

Earlier by the bio-polymer films deposition on silicon the bio-polymer - semiconductor heterostructures were created. The influence of silicon surface atoms on self-organization processes in these bio-molecules were studied. Particularly the silicon - bio-cholesterol aqueous solution and the silicon - bio-chlorophyll aqueous solution spectral photo-sensitivity were considered. In this case the of photo-response broadening in the spectral photo-sensitivity short-wave part of these systems have been observed. The similar broadening is explained by both the passivation of surface recombination centers by OH-groups and the anti-reflecting properties of aqueous solutions. Besides it is possible the additional charge carriers generation caused by quasi-inter-zone transfers in the bio-polymers depending on electron-conformation properties of macromolecules. In the paper the possible mechanisms of current transfer in the bio-polymer - semiconductor heterostructure are discussed

Tracking Ultrafast Carrier Dynamics in Single Semiconductor Nanowire Heterostructures

Directory of Open Access Journals (Sweden)

Taylor A.J.

2013-03-01

Full Text Available An understanding of non-equilibrium carrier dynamics in silicon (Si nanowires (NWs and NW heterostructures is very important due to their many nanophotonic and nanoelectronics applications. Here, we describe the first measurements of ultrafast carrier dynamics and diffusion in single heterostructured Si nanowires, obtained using ultrafast optical microscopy. By isolating individual nanowires, we avoid complications resulting from the broad size and alignment distribution in nanowire ensembles, allowing us to directly probe ultrafast carrier dynamics in these quasi-one-dimensional systems. Spatially-resolved pump-probe spectroscopy demonstrates the influence of surface-mediated mechanisms on carrier dynamics in a single NW, while polarization-resolved femtosecond pump-probe spectroscopy reveals a clear anisotropy in carrier lifetimes measured parallel and perpendicular to the NW axis, due to density-dependent Auger recombination. Furthermore, separating the pump and probe spots along the NW axis enabled us to track space and time dependent carrier diffusion in radial and axial NW heterostructures. These results enable us to reveal the influence of radial and axial interfaces on carrier dynamics and charge transport in these quasi-one-dimensional nanosystems, which can then be used to tailor carrier relaxation in a single nanowire heterostructure for a given application.

Transparent Semiconductor-Superconductor Interface and Induced Gap in an Epitaxial Heterostructure Josephson Junction

NARCIS (Netherlands)

Kjaergaard, M.; Suominen, H. J.; Nowak, M.P.; Akhmerov, A.R.; Shabani, J.; Palmstrøm, C. J.; Nichele, F.; Marcus, C.M.

2017-01-01

Measurement of multiple Andreev Reflection (MAR) in a Josephson junction made from an InAs quantum well heterostructure with epitaxial aluminum is used to quantify a highly transparent effective semiconductor-superconductor interface with near-unity transmission. The observed temperature

Physics and application of persistent spin helix state in semiconductor heterostructures

Science.gov (United States)

Kohda, Makoto; Salis, Gian

2017-07-01

In order to utilize the spin degree of freedom in semiconductors, control of spin states and transfer of the spin information are fundamental requirements for future spintronic devices and quantum computing. Spin orbit (SO) interaction generates an effective magnetic field for moving electrons and enables spin generation, spin manipulation and spin detection without using external magnetic field and magnetic materials. However, spin relaxation also takes place due to a momentum dependent SO-induced effective magnetic field. As a result, SO interaction is considered to be a double-edged sword facilitating spin control but preventing spin transport over long distances. The persistent spin helix (PSH) state solves this problem since uniaxial alignment of the SO field with SU(2) symmetry enables the suppression of spin relaxation while spin precession can still be controlled. Consequently, understanding the PSH becomes an important step towards future spintronic technologies for classical and quantum applications. Here, we review recent progress of PSH in semiconductor heterostructures and its device application. Fundamental physics of SO interaction and the conditions of a PSH state in semiconductor heterostructures are discussed. We introduce experimental techniques to observe a PSH and explain both optical and electrical measurements for detecting a long spin relaxation time and the formation of a helical spin texture. After emphasizing the bulk Dresselhaus SO coefficient γ, the application of PSH states for spin transistors and logic circuits are discussed.

Electronic properties and phase transitions in low-dimensional semiconductors

International Nuclear Information System (INIS)

Panich, A M

2008-01-01

We present the first review of the current state of the literature on electronic properties and phase transitions in TlX and TlMX 2 (M = Ga, In; X = Se, S, Te) compounds. These chalcogenides belong to a family of the low-dimensional semiconductors possessing chain or layered structure. They are of significant interest because of their highly anisotropic properties, semi- and photoconductivity, nonlinear effects in their I-V characteristics (including a region of negative differential resistance), switching and memory effects, second harmonic optical generation, relaxor behavior and potential applications for optoelectronic devices. We review the crystal structure of TlX and TlMX 2 compounds, their transport properties under ambient conditions, experimental and theoretical studies of the electronic structure, transport properties and semiconductor-metal phase transitions under high pressure, and sequences of temperature-induced structural phase transitions with intermediate incommensurate states. The electronic nature of the ferroelectric phase transitions in the above-mentioned compounds, as well as relaxor behavior, nanodomains and possible occurrence of quantum dots in doped and irradiated crystals is discussed. (topical review)

Universal Curve of Optimum Thermoelectric Figures of Merit for Bulk and Low-Dimensional Semiconductors

Science.gov (United States)

Hung, Nguyen T.; Nugraha, Ahmad R. T.; Saito, Riichiro

2018-02-01

This paper is a contribution to the Physical Review Applied collection in memory of Mildred S. Dresselhaus. Analytical formulas for thermoelectric figures of merit and power factors are derived based on the one-band model. We find that there is a direct relationship between the optimum figures of merit and the optimum power factors of semiconductors despite of the fact that the two quantities are generally given by different values of chemical potentials. By introducing a dimensionless parameter consisting of the optimum power factor and lattice thermal conductivity (without electronic thermal conductivity), it is possible to unify optimum figures of merit of both bulk and low-dimensional semiconductors into a single universal curve that covers many materials with different dimensionalities.

One-pot growth of two-dimensional lateral heterostructures via sequential edge-epitaxy

Science.gov (United States)

Sahoo, Prasana K.; Memaran, Shahriar; Xin, Yan; Balicas, Luis; Gutiérrez, Humberto R.

2018-01-01

Two-dimensional heterojunctions of transition-metal dichalcogenides have great potential for application in low-power, high-performance and flexible electro-optical devices, such as tunnelling transistors, light-emitting diodes, photodetectors and photovoltaic cells. Although complex heterostructures have been fabricated via the van der Waals stacking of different two-dimensional materials, the in situ fabrication of high-quality lateral heterostructures with multiple junctions remains a challenge. Transition-metal-dichalcogenide lateral heterostructures have been synthesized via single-step, two-step or multi-step growth processes. However, these methods lack the flexibility to control, in situ, the growth of individual domains. In situ synthesis of multi-junction lateral heterostructures does not require multiple exchanges of sources or reactors, a limitation in previous approaches as it exposes the edges to ambient contamination, compromises the homogeneity of domain size in periodic structures, and results in long processing times. Here we report a one-pot synthetic approach, using a single heterogeneous solid source, for the continuous fabrication of lateral multi-junction heterostructures consisting of monolayers of transition-metal dichalcogenides. The sequential formation of heterojunctions is achieved solely by changing the composition of the reactive gas environment in the presence of water vapour. This enables selective control of the water-induced oxidation and volatilization of each transition-metal precursor, as well as its nucleation on the substrate, leading to sequential edge-epitaxy of distinct transition-metal dichalcogenides. Photoluminescence maps confirm the sequential spatial modulation of the bandgap, and atomic-resolution images reveal defect-free lateral connectivity between the different transition-metal-dichalcogenide domains within a single crystal structure. Electrical transport measurements revealed diode-like responses across the

Two-dimensional heterostructures for energy storage

Energy Technology Data Exchange (ETDEWEB)

Gogotsi, Yury G. [Drexel Univ., Philadelphia, PA (United States); Pomerantseva, Ekaterina [Drexel Univ., Philadelphia, PA (United States)

2017-06-12

Two-dimensional (2D) materials provide slit-shaped ion diffusion channels that enable fast movement of lithium and other ions. However, electronic conductivity, the number of intercalation sites, and stability during extended cycling are also crucial for building high-performance energy storage devices. While individual 2D materials, such as graphene, show some of the required properties, none of them can offer all properties needed to maximize energy density, power density, and cycle life. Here we argue that stacking different 2D materials into heterostructured architectures opens an opportunity to construct electrodes that would combine the advantages of the individual building blocks while eliminating the associated shortcomings. We discuss characteristics of common 2D materials and provide examples of 2D heterostructured electrodes that showed new phenomena leading to superior electrochemical performance. As a result, we also consider electrode fabrication approaches and finally outline future steps to create 2D heterostructured electrodes that could greatly expand current energy storage technologies.

Mesoscopic Elastic Distortions in GaAs Quantum Dot Heterostructures.

Science.gov (United States)

Pateras, Anastasios; Park, Joonkyu; Ahn, Youngjun; Tilka, Jack A; Holt, Martin V; Reichl, Christian; Wegscheider, Werner; Baart, Timothy A; Dehollain, Juan Pablo; Mukhopadhyay, Uditendu; Vandersypen, Lieven M K; Evans, Paul G

2018-05-09

Quantum devices formed in high-electron-mobility semiconductor heterostructures provide a route through which quantum mechanical effects can be exploited on length scales accessible to lithography and integrated electronics. The electrostatic definition of quantum dots in semiconductor heterostructure devices intrinsically involves the lithographic fabrication of intricate patterns of metallic electrodes. The formation of metal/semiconductor interfaces, growth processes associated with polycrystalline metallic layers, and differential thermal expansion produce elastic distortion in the active areas of quantum devices. Understanding and controlling these distortions present a significant challenge in quantum device development. We report synchrotron X-ray nanodiffraction measurements combined with dynamical X-ray diffraction modeling that reveal lattice tilts with a depth-averaged value up to 0.04° and strain on the order of 10 -4 in the two-dimensional electron gas (2DEG) in a GaAs/AlGaAs heterostructure. Elastic distortions in GaAs/AlGaAs heterostructures modify the potential energy landscape in the 2DEG due to the generation of a deformation potential and an electric field through the piezoelectric effect. The stress induced by metal electrodes directly impacts the ability to control the positions of the potential minima where quantum dots form and the coupling between neighboring quantum dots.

Spintronic effects in metallic, semiconductor, metal-oxide and metal-semiconductor heterostructures

Energy Technology Data Exchange (ETDEWEB)

Bratkovsky, A M [Hewlett-Packard Laboratories, 1501 Page Mill Road, MS 1123, Palo Alto, CA 94304 (United States)

2008-02-15

Spintronics is a rapidly growing field focusing on phenomena and related devices essentially dependent on spin transport. Some of them are already an established part of microelectronics. We review recent theoretical and experimental advances in achieving large spin injection efficiency (polarization of current) and accumulated spin polarization. These include tunnel and giant magnetoresistance, spin-torque and spin-orbit effects on electron transport in various heterostructures. We give a microscopic description of spin tunneling through oxide and modified Schottky barriers between a ferromagnet (FM) and a semiconductor (S). It is shown that in such FM-S junctions electrons with a certain spin projection can be efficiently injected into (or extracted from) S, while electrons with the opposite spin can accumulate in S near the interface. The criterion for efficient injection is opposite to a known Rashba criterion, since the barrier should be rather transparent. In degenerate semiconductors, extraction of spin can proceed at low temperatures. We mention a few novel spin-valve ultrafast devices with small dissipated power: a magnetic sensor, a spin transistor, an amplifier, a frequency multiplier, a square-law detector and a source of polarized radiation. We also discuss effects related to spin-orbital interactions, such as the spin Hall effect (SHE) and a recently predicted positive magnetoresistance accompanying SHE. Some esoteric devices such as 'spinFET', interacting spin logic and spin-based quantum computing are discussed and problems with their realization are highlighted. We demonstrate that the so-called 'ferroelectric tunnel junctions' are unlikely to provide additional functionality because in all realistic situations the ferroelectric barrier would be split into domains by the depolarizing field.

Spintronic effects in metallic, semiconductor, metal-oxide and metal-semiconductor heterostructures

International Nuclear Information System (INIS)

Bratkovsky, A M

2008-01-01

Spintronics is a rapidly growing field focusing on phenomena and related devices essentially dependent on spin transport. Some of them are already an established part of microelectronics. We review recent theoretical and experimental advances in achieving large spin injection efficiency (polarization of current) and accumulated spin polarization. These include tunnel and giant magnetoresistance, spin-torque and spin-orbit effects on electron transport in various heterostructures. We give a microscopic description of spin tunneling through oxide and modified Schottky barriers between a ferromagnet (FM) and a semiconductor (S). It is shown that in such FM-S junctions electrons with a certain spin projection can be efficiently injected into (or extracted from) S, while electrons with the opposite spin can accumulate in S near the interface. The criterion for efficient injection is opposite to a known Rashba criterion, since the barrier should be rather transparent. In degenerate semiconductors, extraction of spin can proceed at low temperatures. We mention a few novel spin-valve ultrafast devices with small dissipated power: a magnetic sensor, a spin transistor, an amplifier, a frequency multiplier, a square-law detector and a source of polarized radiation. We also discuss effects related to spin-orbital interactions, such as the spin Hall effect (SHE) and a recently predicted positive magnetoresistance accompanying SHE. Some esoteric devices such as 'spinFET', interacting spin logic and spin-based quantum computing are discussed and problems with their realization are highlighted. We demonstrate that the so-called 'ferroelectric tunnel junctions' are unlikely to provide additional functionality because in all realistic situations the ferroelectric barrier would be split into domains by the depolarizing field

Spintronic effects in metallic, semiconductor, metal oxide and metal semiconductor heterostructures

Science.gov (United States)

Bratkovsky, A. M.

2008-02-01

Spintronics is a rapidly growing field focusing on phenomena and related devices essentially dependent on spin transport. Some of them are already an established part of microelectronics. We review recent theoretical and experimental advances in achieving large spin injection efficiency (polarization of current) and accumulated spin polarization. These include tunnel and giant magnetoresistance, spin-torque and spin-orbit effects on electron transport in various heterostructures. We give a microscopic description of spin tunneling through oxide and modified Schottky barriers between a ferromagnet (FM) and a semiconductor (S). It is shown that in such FM-S junctions electrons with a certain spin projection can be efficiently injected into (or extracted from) S, while electrons with the opposite spin can accumulate in S near the interface. The criterion for efficient injection is opposite to a known Rashba criterion, since the barrier should be rather transparent. In degenerate semiconductors, extraction of spin can proceed at low temperatures. We mention a few novel spin-valve ultrafast devices with small dissipated power: a magnetic sensor, a spin transistor, an amplifier, a frequency multiplier, a square-law detector and a source of polarized radiation. We also discuss effects related to spin-orbital interactions, such as the spin Hall effect (SHE) and a recently predicted positive magnetoresistance accompanying SHE. Some esoteric devices such as 'spinFET', interacting spin logic and spin-based quantum computing are discussed and problems with their realization are highlighted. We demonstrate that the so-called 'ferroelectric tunnel junctions' are unlikely to provide additional functionality because in all realistic situations the ferroelectric barrier would be split into domains by the depolarizing field.

Characterization of GaAs and hetero-structures of GaAs-(AlGa)As films, by Hall effect

International Nuclear Information System (INIS)

Diniz, R.P.

1989-08-01

Hall effect measurements were performed on a series of semiconductor gallium arsenide (GaAs) films, intentionally or unitentionally doped, grown by molecular beam epitaxy (MBE). These measurements made possible both the evaluation of the films quality and the calibration of the dopants (Si and Be) effusion cells on the growing machine. Measurements on modulation doped single interface heterostructures also grown by MBE followed. The two dimensional electron gas in the heterostructures shows low temperature high mobility. The application of a strong magnetic field perpendicular to the plane of the gas eliminated its degrees of freedom completely and permitted the observation of Schubnikov-deHaas oscillations and integer quantum Hall effect. During the work we have deviced and developed apparatus in order to make ohmic contacts and perform litography to semiconductors. (author) [pt

Bandgap engineering and charge separation in two-dimensional GaS-based van der Waals heterostructures for photocatalytic water splitting

Science.gov (United States)

Wang, Biao; Kuang, Anlong; Luo, Xukai; Wang, Guangzhao; Yuan, Hongkuan; Chen, Hong

2018-05-01

Two-dimensional (2D) gallium sulfide (GaS), hexagonal boron nitride (h-BN) and graphitic carbon nitride (g-C3N4) have been fabricated and expected to be promising photocatalysts under ultraviolet irradiation. Here, we employ hybrid density functional calculations to explore the potential of the 2D GaS-based heterojunctions GaS/h-BN (g-C3N4) for the design of efficient water redox photocatalysts. Both heterostructures can be formed via van der Waals (vdW) interaction and are direct bandgap semiconductors, whose bandgaps are reduced comparing with isolated GaS, h-BN or g-C3N4 monolayers and whose bandedges straddle water redox potentials. Furthermore, the optical absorption of GaS/h-BN (g-C3N4) heterostructures is observably enhanced in the ultraviolet-visible (UV-vis) light range. The electron-hole pairs in GaS/h-BN (g-C3N4) heterostructures are completely separated from different layers. In addition, the in-plane biaxial strain can effectively modulate the electronic properties of GaS/h-BN (g-C3N4) heterostructures. Thus the GaS/h-BN (g-C3N4) heterostructures are anticipated to be promising candidates for photocatalytic water splitting to produce hydrogen.

Hydrodynamic pumping of a quantum Fermi liquid in a semiconductor heterostructure

Science.gov (United States)

Heremans, J. J.; Kantha, D.; Chen, H.; Govorov, A. O.

2003-03-01

We present experimental results for a pumping mechanism observed in mesoscopic structures patterned on two-dimensional electron systems in GaAs/AlGaAs heterostructures. The experiments are performed at low temperatures, in the ballistic regime. The effect is observed as a voltage or current signal corresponding to carrier extraction from sub-micron sized apertures, when these apertures are swept by a beam of ballistic electrons. The carrier extraction, phenomenologically reminiscent of the Bernoulli pumping effect in classical fluids, has been observed in various geometries. We ascertained linearity between measured voltage and injected current in all experiments, thereby excluding rectification effects. The linear response, however, points to a fundamental difference from the Bernoulli effect in classical liquids, where the response is nonlinear and quadratic in terms of the velocity. The temperature dependence of the effect will also be presented. We thank M. Shayegan (Princeton University) for the heterostructure growth, and acknowledge support from NSF DMR-0094055.

Three-dimensional mesoscale heterostructures of ZnO nanowire arrays epitaxially grown on CuGaO2 nanoplates as individual diodes.

Science.gov (United States)

Forticaux, Audrey; Hacialioglu, Salih; DeGrave, John P; Dziedzic, Rafal; Jin, Song

2013-09-24

We report a three-dimensional (3D) mesoscale heterostructure composed of one-dimensional (1D) nanowire (NW) arrays epitaxially grown on two-dimensional (2D) nanoplates. Specifically, three facile syntheses are developed to assemble vertical ZnO NWs on CuGaO2 (CGO) nanoplates in mild aqueous solution conditions. The key to the successful 3D mesoscale integration is the preferential nucleation and heteroepitaxial growth of ZnO NWs on the CGO nanoplates. Using transmission electron microscopy, heteroepitaxy was found between the basal planes of CGO nanoplates and ZnO NWs, which are their respective (001) crystallographic planes, by the observation of a hexagonal Moiré fringes pattern resulting from the slight mismatch between the c planes of ZnO and CGO. Careful analysis shows that this pattern can be described by a hexagonal supercell with a lattice parameter of almost exactly 11 and 12 times the a lattice constants for ZnO and CGO, respectively. The electrical properties of the individual CGO-ZnO mesoscale heterostructures were measured using a current-sensing atomic force microscopy setup to confirm the rectifying p-n diode behavior expected from the band alignment of p-type CGO and n-type ZnO wide band gap semiconductors. These 3D mesoscale heterostructures represent a new motif in nanoassembly for the integration of nanomaterials into functional devices with potential applications in electronics, photonics, and energy.

Optical properties of low-dimensional materials

CERN Document Server

Ogawa, T

1998-01-01

This book surveys recent theoretical and experimental studies of optical properties of low-dimensional materials. As an extended version of Optical Properties of Low-Dimensional Materials (Volume 1, published in 1995 by World Scientific), Volume 2 covers a wide range of interesting low-dimensional materials including both inorganic and organic systems, such as disordered polymers, deformable molecular crystals, dilute magnetic semiconductors, SiGe/Si short-period superlattices, GaAs quantum wires, semiconductor microcavities, and photonic crystals. There are excellent review articles by promis

Three-dimensional Ag{sub 2}O/WO{sub 3}·0.33H{sub 2}O heterostructures for improving photocatalytic activity

Energy Technology Data Exchange (ETDEWEB)

He, Xiaoyu [Department of Applied Physics, Chongqing University, Chongqing 400044 (China); Department of Physics and Electronic Engineering, Yangtze Normal University, Chongqing 408100 (China); Hu, Chenguo, E-mail: hucg@cqu.edu.cn [Department of Applied Physics, Chongqing University, Chongqing 400044 (China); Xi, Yi; Zhang, Kaiyou; Hua, Hao [Department of Applied Physics, Chongqing University, Chongqing 400044 (China)

2014-02-01

Highlights: • Ag{sub 2}O/WO{sub 3}·0.33H{sub 2}O 3D network heterostructures are prepared via a simple precipitatation method. • Ag{sub 2}O/WO{sub 3}·0.33H{sub 2}O networks exhibit much enhanced photocatalytic activity. • High photocatalytic activity is attributed to its heterostructure and 3D architectures. - Abstract: Three-dimensional Ag{sub 2}O/WO{sub 3}·0.33H{sub 2}O heterostructures were fabricated by loading Ag{sub 2}O nanoparticles on WO{sub 3}·0.33H{sub 2}O 3D networks via a simple chemical precipitation method. The Ag{sub 2}O/WO{sub 3}·0.33H{sub 2}O heterostructures exhibited much enhanced photocatalytic activity for the degradation of methylene blue (MB) under simulated solar light irradiation. The optimal molar ratio of Ag{sub 2}O and WO{sub 3}·0.33H{sub 2}O is 1:2. The outstanding photocatalytic activity of the Ag{sub 2}O/WO{sub 3}·0.33H{sub 2}O can be attributed to its large surface area of the three-dimensional networks, the enhanced sunlight absorption and the prevention of electrons–holes combination from the heterostructures. The experiment result demonstrates that wide band gap semiconductor (WO{sub 3}·0.33H{sub 2}O) modified by narrow band gap metal oxide (Ag{sub 2}O) with 3D architecture will be an effective route to enhance its photocatalytic activity.

ABC-model analysis of gain-switched pulse characteristics in low-dimensional semiconductor lasers

Science.gov (United States)

Bao, Xumin; Liu, Yuejun; Weng, Guoen; Hu, Xiaobo; Chen, Shaoqiang

2018-01-01

The gain-switching dynamics of low-dimensional semiconductor lasers is simulated numerically by using a two-dimensional rate-equation model. Use is also made of the ABC model, where the carrier recombination rate is described by a function of carrier densities including Shockley - Read - Hall (SRH) recombination coefficient A, spontaneous emission coefficient B and Auger recombination coefficient C. Effects of the ABC parameters on the ultrafast gain-switched pulse characteristics with high-density pulse excitation are analysed. It is found that while the parameter A has almost no obvious effects, the parameters B and C have distinctly different effects: B influences significantly the delay time of the gain-switched pulse, while C affects mainly the pulse intensity.

Low-temperature magnetotransport in Si/SiGe heterostructures on 300 mm Si wafers

Science.gov (United States)

Scappucci, Giordano; Yeoh, L.; Sabbagh, D.; Sammak, A.; Boter, J.; Droulers, G.; Kalhor, N.; Brousse, D.; Veldhorst, M.; Vandersypen, L. M. K.; Thomas, N.; Roberts, J.; Pillarisetty, R.; Amin, P.; George, H. C.; Singh, K. J.; Clarke, J. S.

Undoped Si/SiGe heterostructures are a promising material stack for the development of spin qubits in silicon. To deploy a qubit into high volume manufacturing in a quantum computer requires stringent control over substrate uniformity and quality. Electron mobility and valley splitting are two key electrical metrics of substrate quality relevant for qubits. Here we present low-temperature magnetotransport measurements of strained Si quantum wells with mobilities in excess of 100000 cm2/Vs fabricated on 300 mm wafers within the framework of advanced semiconductor manufacturing. These results are benchmarked against the results obtained in Si quantum wells deposited on 100 mm Si wafers in an academic research environment. To ensure rapid progress in quantum wells quality we have implemented fast feedback loops from materials growth, to heterostructure FET fabrication, and low temperature characterisation. On this topic we will present recent progress in developing a cryogenic platform for high-throughput magnetotransport measurements.

Three dimensional strained semiconductors

Science.gov (United States)

Voss, Lars; Conway, Adam; Nikolic, Rebecca J.; Leao, Cedric Rocha; Shao, Qinghui

2016-11-08

In one embodiment, an apparatus includes a three dimensional structure comprising a semiconductor material, and at least one thin film in contact with at least one exterior surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the three dimensional structure. In another embodiment, a method includes forming a three dimensional structure comprising a semiconductor material, and depositing at least one thin film on at least one surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the structure.

Heterostructures based on two-dimensional layered materials and their potential applications

KAUST Repository

Li, Ming-yang; Chen, Chang-Hsiao; Shi, Yumeng; Li, Lain-Jong

2015-01-01

The development of two-dimensional (2D) layered materials is driven by fundamental interest and their potential applications. Atomically thin 2D materials provide a wide range of basic building blocks with unique electrical, optical, and thermal properties which do not exist in their bulk counterparts. The van der Waals interlayer interaction enables the possibility to exfoliate and reassemble different 2D materials into arbitrarily and vertically stacked heterostructures. Recently developed vapor phase growth of 2D materials further paves the way of directly synthesizing vertical and lateral heterojunctions. This review provides insights into the layered 2D heterostructures, with a concise introduction to preparative approaches for 2D materials and heterostructures. These unique 2D heterostructures have abundant implications for many potential applications.

Heterostructures based on two-dimensional layered materials and their potential applications

KAUST Repository

Li, Ming-yang

2015-12-04

The development of two-dimensional (2D) layered materials is driven by fundamental interest and their potential applications. Atomically thin 2D materials provide a wide range of basic building blocks with unique electrical, optical, and thermal properties which do not exist in their bulk counterparts. The van der Waals interlayer interaction enables the possibility to exfoliate and reassemble different 2D materials into arbitrarily and vertically stacked heterostructures. Recently developed vapor phase growth of 2D materials further paves the way of directly synthesizing vertical and lateral heterojunctions. This review provides insights into the layered 2D heterostructures, with a concise introduction to preparative approaches for 2D materials and heterostructures. These unique 2D heterostructures have abundant implications for many potential applications.

Traditional Semiconductors in the Two-Dimensional Limit.

Science.gov (United States)

Lucking, Michael C; Xie, Weiyu; Choe, Duk-Hyun; West, Damien; Lu, Toh-Ming; Zhang, S B

2018-02-23

Interest in two-dimensional materials has exploded in recent years. Not only are they studied due to their novel electronic properties, such as the emergent Dirac fermion in graphene, but also as a new paradigm in which stacking layers of distinct two-dimensional materials may enable different functionality or devices. Here, through first-principles theory, we reveal a large new class of two-dimensional materials which are derived from traditional III-V, II-VI, and I-VII semiconductors. It is found that in the ultrathin limit the great majority of traditional binary semiconductors studied (a series of 28 semiconductors) are not only kinetically stable in a two-dimensional double layer honeycomb structure, but more energetically stable than the truncated wurtzite or zinc-blende structures associated with three dimensional bulk. These findings both greatly increase the landscape of two-dimensional materials and also demonstrate that in the double layer honeycomb form, even ordinary semiconductors, such as GaAs, can exhibit exotic topological properties.

Ferromagnetic semiconductor-metal transition in heterostructures of electron doped europium monoxide

Energy Technology Data Exchange (ETDEWEB)

Stollenwerk, Tobias

2013-09-15

In the present work, we develop and solve a self-consistent theory for the description of the simultaneous ferromagnetic semiconductor-metal transition in electron doped Europium monoxide. We investigate two different types of electron doping, Gadolinium impurities and Oxygen vacancies. Besides the conduction band occupation, we can identify low lying spin fluctuations on magnetic impurities as the driving force behind the doping induced enhancement of the Curie temperature. Moreover, we predict the signatures of these magnetic impurities in the spectra of scanning tunneling microscope experiments. By extending the theory to allow for inhomogeneities in one spatial direction, we are able to investigate thin films and heterostructures of Gadolinium doped Europium monoxide. Here, we are able to reproduce the experimentally observed decrease of the Curie temperature with the film thickness. This behavior is attributed to missing coupling partners of the localized 4f moments as well as to an electron depletion at the surface which leads to a reduction of the number of itinerant electrons. By investigating the influence of a metallic substrate onto the phase transition in Gadolinium doped Europium monoxide, we find that the Curie temperature can be increased up to 20%. However, as we show, the underlying mechanism of metal-interface induced charge carrier accumulation is inextricably connected to a suppression of the semiconductor-metal transition.

Ferromagnetic semiconductor-metal transition in heterostructures of electron doped europium monoxide

International Nuclear Information System (INIS)

Stollenwerk, Tobias

2013-09-01

In the present work, we develop and solve a self-consistent theory for the description of the simultaneous ferromagnetic semiconductor-metal transition in electron doped Europium monoxide. We investigate two different types of electron doping, Gadolinium impurities and Oxygen vacancies. Besides the conduction band occupation, we can identify low lying spin fluctuations on magnetic impurities as the driving force behind the doping induced enhancement of the Curie temperature. Moreover, we predict the signatures of these magnetic impurities in the spectra of scanning tunneling microscope experiments. By extending the theory to allow for inhomogeneities in one spatial direction, we are able to investigate thin films and heterostructures of Gadolinium doped Europium monoxide. Here, we are able to reproduce the experimentally observed decrease of the Curie temperature with the film thickness. This behavior is attributed to missing coupling partners of the localized 4f moments as well as to an electron depletion at the surface which leads to a reduction of the number of itinerant electrons. By investigating the influence of a metallic substrate onto the phase transition in Gadolinium doped Europium monoxide, we find that the Curie temperature can be increased up to 20%. However, as we show, the underlying mechanism of metal-interface induced charge carrier accumulation is inextricably connected to a suppression of the semiconductor-metal transition.

One-dimensional Z-scheme TiO{sub 2}/WO{sub 3}/Pt heterostructures for enhanced hydrogen generation

Energy Technology Data Exchange (ETDEWEB)

Gao, Hongqing [School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001 (China); State Centre for International Cooperation on Designer Low-carbon and Environmental Materials (SCICDLCEM), Zhengzhou University, Zhengzhou 450001, Henan (China); Zhang, Peng, E-mail: Zhangp@zzu.edu.cn [School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001 (China); State Centre for International Cooperation on Designer Low-carbon and Environmental Materials (SCICDLCEM), Zhengzhou University, Zhengzhou 450001, Henan (China); Hu, Junhua, E-mail: Hujh@zzu.edu.cn [School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001 (China); State Centre for International Cooperation on Designer Low-carbon and Environmental Materials (SCICDLCEM), Zhengzhou University, Zhengzhou 450001, Henan (China); Pan, Jimin [School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001 (China); Fan, Jiajie [School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001 (China); State Centre for International Cooperation on Designer Low-carbon and Environmental Materials (SCICDLCEM), Zhengzhou University, Zhengzhou 450001, Henan (China); Shao, Guosheng [School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001 (China); State Centre for International Cooperation on Designer Low-carbon and Environmental Materials (SCICDLCEM), Zhengzhou University, Zhengzhou 450001, Henan (China); Institute for Renewable Energy and Environmental Technologies, University of Bolton, Bolton BL35AB (United Kingdom)

2017-01-01

Graphical abstract: We reported one-dimensional solid-state Z-scheme photosynthetic heterojunction system with Pt nanoparticle as an electron collector and WO{sub 3} as a hole collector, leading to effective charge separation. - Highlights: • The composite nanofibers were fabricated by facile electrospinning technique. • The composite nanofibers exhibited enhanced activity for H{sub 2} evolution. • Enhanced activity is due to the formation of Z-scheme TiO{sub 2}/WO{sub 3}/Pt heterojunction. - Abstract: One-dimensional Z-scheme TiO{sub 2}/WO{sub 3}/Pt heterostructures were fabricated by integrating a facile electrospinning technique and subsequent annealing in air. X-ray diffraction, scanning electron microscopy, transmission electron microscopy, X-ray photoelectron spectroscopy and UV–vis diffuse reflectance spectroscopy, were used to characterize the as-fabricated samples. The results showed that the H{sub 2}-generation of the as-fabricated one-dimensional Z-scheme TiO{sub 2}/WO{sub 3}/Pt heterostructures (S2) was greatly enhanced compared with pure TiO{sub 2} nanofibers (S0) and TiO{sub 2}/WO{sub 3} nanofibers (S1). The enhanced photocatalyst activities were mainly attributed to the solid-state Z-scheme photosynthetic heterojunction system with Pt nanoparticle as an electron collector and WO{sub 3} as a hole collector, leading to effective charge separation on these semiconductors, which were evidenced by electrochemical impedance spectroscopy (EIS) and photocurrent analysis.

Attenuation of an optical wave propagating in a waveguide, formed by layers of a semiconductor heterostructure, owing to scattering on inhomogeneities

International Nuclear Information System (INIS)

Bogatov, Alexandr P; Burmistrov, I S

1999-01-01

The scattering of an optical wave, propagating in a waveguide made up of layers of a semiconductor heterostructure, is analysed. The attenuation coefficient of the wave is found both for quasi-homogeneous single-crystal layers of a semiconductor solid solution and for layers containing quantum dots. (active media)

Heterostructures and quantum devices

CERN Document Server

Einspruch, Norman G

1994-01-01

Heterostructure and quantum-mechanical devices promise significant improvement in the performance of electronic and optoelectronic integrated circuits (ICs). Though these devices are the subject of a vigorous research effort, the current literature is often either highly technical or narrowly focused. This book presents heterostructure and quantum devices to the nonspecialist, especially electrical engineers working with high-performance semiconductor devices. It focuses on a broad base of technical applications using semiconductor physics theory to develop the next generation of electrical en

Scanning tunnel microscopy of semiconductor nanostructures

International Nuclear Information System (INIS)

Eder, C.

1997-09-01

In this work a scanning tunneling microscope (STM) is utilized as a surface sensitive tool for local characterization of internal potential profiles of GaAs/AlGaAs heterostructures. The STM is operated at variable temperatures under ambient conditions, i.e. either in air or in the variable temperature insert of a cryostat. Distinct local differences between current-voltage curves taken on inverted heterostructures, which were patterned by wet chemically etching, are found. The spectroscopic differences can be ascribed to the internal potential profile in the subsurface regions of the sample. Current imaging tunneling spectroscopy (CITS) is applied to study quantum wire regions. It is found that the magnitude of the CITS-current is an indirect measure of edge depletion zones, which are much larger at 4.2 K. Direct measurements of relevant energy levels in quantum structures were obtained by ballistic electron emission microscopy (BEEM). It is shown that this 3-terminal technique is an excellent tool for transport characterization of minibands formed in semiconductor superlattices. Furthermore, low dimensional electron gases are shown to act as very efficient collector electrodes at low temperatures. For the first time, BEEM experiments were performed at 4.2 K. The enhanced thermal resolution at 4.2 K allows an analysis of the relevant scattering processes. It is found that the collector current is strongly influenced by diffusive scattering at the metal/semiconductor interface. (author)

Synthesis, fabrication and characterization of Ge/Si axial nanowire heterostructure tunnel FETs

Energy Technology Data Exchange (ETDEWEB)

Picraux, Samuel T [Los Alamos National Laboratory; Dayeh, Shadi A [Los Alamos National Laboratory

2010-01-01

Axial Ge/Si heterostructure nanowires allow energy band-edge engineering along the axis of the nanowire, which is the charge transport direction, and the realization of asymmetric devices for novel device architectures. This work reports on two advances in the area of heterostructure nanowires and tunnel FETs: (i) the realization of 100% compositionally modulated Si/Ge axial heterostructure nanowires with lengths suitable for device fabrication and (ii) the design and implementation of Schottky barrier tunnel FETs on these nanowires for high-on currents and suppressed ambipolar behavior. Initial prototype devices resulted in a current drive in excess of 100 {micro}A/{micro}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios. These results demonstrate the potential of such asymmetric heterostructures (both in the semiconductor channel and metal-semiconductor barrier heights) for low-power and high performance electronics.

Density Functional Theory Simulations of Semiconductors for Photovoltaic Applications: Hybrid Organic-Inorganic Perovskites and III/V Heterostructures

Directory of Open Access Journals (Sweden)

Jacky Even

2014-01-01

Full Text Available Potentialities of density functional theory (DFT based methodologies are explored for photovoltaic materials through the modeling of the structural and optoelectronic properties of semiconductor hybrid organic-inorganic perovskites and GaAs/GaP heterostructures. They show how the properties of these bulk materials, as well as atomistic relaxations, interfaces, and electronic band-lineups in small heterostructures, can be thoroughly investigated. Some limitations of available standard DFT codes are discussed. Recent improvements able to treat many-body effects or based on density-functional perturbation theory are also reviewed in the context of issues relevant to photovoltaic technologies.

Semiconductor@metal-organic framework core-shell heterostructures: a case of ZnO@ZIF-8 nanorods with selective photoelectrochemical response.

Science.gov (United States)

Zhan, Wen-wen; Kuang, Qin; Zhou, Jian-zhang; Kong, Xiang-jian; Xie, Zhao-xiong; Zheng, Lan-sun

2013-02-06

Metal-organic frameworks (MOFs) and related material classes are attracting considerable attention for their applications in gas storage/separation as well as catalysis. In contrast, research concerning potential uses in electronic devices (such as sensors) is in its infancy, which might be due to a great challenge in the fabrication of MOFs and semiconductor composites with well-designed structures. In this paper, we proposed a simple self-template strategy to fabricate metal oxide semiconductor@MOF core-shell heterostructures, and successfully obtained freestanding ZnO@ZIF-8 nanorods as well as vertically standing arrays (including nanorod arrays and nanotube arrays). In this synthetic process, ZnO nanorods not only act as the template but also provide Zn(2+) ions for the formation of ZIF-8. In addition, we have demonstrated that solvent composition and reaction temperature are two crucial factors for successfully fabricating well-defined ZnO@ZIF-8 heterostructures. As we expect, the as-prepared ZnO@ZIF-8 nanorod arrays display distinct photoelectrochemical response to hole scavengers with different molecule sizes (e.g., H(2)O(2) and ascorbic acid) owing to the limitation of the aperture of the ZIF-8 shell. Excitingly, such ZnO@ZIF-8 nanorod arrays were successfully applied to the detection of H(2)O(2) in the presence of serous buffer solution. Therefore, it is reasonable to believe that the semiconductor@MOFs heterostructure potentially has promising applications in many electronic devices including sensors.

Core - shell upconversion nanoparticle - semiconductor heterostructures for photodynamic therapy

Science.gov (United States)

Dou, Qing Qing; Rengaramchandran, Adith; Selvan, Subramanian Tamil; Paulmurugan, Ramasamy; Zhang, Yong

2015-02-01

Core-shell nanoparticles (CSNPs) with diverse chemical compositions have been attracting greater attention in recent years. However, it has been a challenge to develop CSNPs with different crystal structures due to the lattice mismatch of the nanocrystals. Here we report a rational design of core-shell heterostructure consisting of NaYF4:Yb,Tm upconversion nanoparticle (UCN) as the core and ZnO semiconductor as the shell for potential application in photodynamic therapy (PDT). The core-shell architecture (confirmed by TEM and STEM) enables for improving the loading efficiency of photosensitizer (ZnO) as the semiconductor is directly coated on the UCN core. Importantly, UCN acts as a transducer to sensitize ZnO and trigger the generation of cytotoxic reactive oxygen species (ROS) to induce cancer cell death. We also present a firefly luciferase (FLuc) reporter gene based molecular biosensor (ARE-FLuc) to measure the antioxidant signaling response activated in cells during the release of ROS in response to the exposure of CSNPs under 980 nm NIR light. The breast cancer cells (MDA-MB-231 and 4T1) exposed to CSNPs showed significant release of ROS as measured by aminophenyl fluorescein (APF) and ARE-FLuc luciferase assays, and ~45% cancer cell death as measured by MTT assay, when illuminated with 980 nm NIR light.

Enhanced photoresponse characteristics of transistors using CVD-grown MoS2/WS2 heterostructures

Science.gov (United States)

Shan, Junjie; Li, Jinhua; Chu, Xueying; Xu, Mingze; Jin, Fangjun; Fang, Xuan; Wei, Zhipeng; Wang, Xiaohua

2018-06-01

Semiconductor heterostructures based on transition metal dichalcogenides provide a broad platform to research two-dimensional nanomaterials and design atomically thin devices for fundamental and applied interests. The MoS2/WS2 heterostructure was prepared on SiO2/Si substrate by chemical vapor deposition (CVD) in our research. And the optical properties of the heterostructure was characterized by Raman and photoluminescence (PL) spectroscopy. The similar 2 orders of magnitude decrease of PL intensity in MoS2/WS2 heterostructures was tested, which is attribute to the electrical and optical modulation effects are connected with the interfacial charge transfer between MoS2 and WS2 films. Using MoS2/WS2 heterostructure as channel material of the phototransistor, we demonstrated over 50 folds enhanced photoresponsivity of multilayer MoS2 field-effect transistor. The results indicate that the MoS2/WS2 films can be a promising heterostructure material to enhance the photoresponse characteristics of MoS2-based phototransistors.

Strain Imaging of Nanoscale Semiconductor Heterostructures with X-Ray Bragg Projection Ptychography

Science.gov (United States)

Holt, Martin V.; Hruszkewycz, Stephan O.; Murray, Conal E.; Holt, Judson R.; Paskiewicz, Deborah M.; Fuoss, Paul H.

2014-04-01

We report the imaging of nanoscale distributions of lattice strain and rotation in complementary components of lithographically engineered epitaxial thin film semiconductor heterostructures using synchrotron x-ray Bragg projection ptychography (BPP). We introduce a new analysis method that enables lattice rotation and out-of-plane strain to be determined independently from a single BPP phase reconstruction, and we apply it to two laterally adjacent, multiaxially stressed materials in a prototype channel device. These results quantitatively agree with mechanical modeling and demonstrate the ability of BPP to map out-of-plane lattice dilatation, a parameter critical to the performance of electronic materials.

In-plane heterostructures of Sb/Bi with high carrier mobility

Science.gov (United States)

Zhao, Pei; Wei, Wei; Sun, Qilong; Yu, Lin; Huang, Baibiao; Dai, Ying

2017-06-01

In-plane two-dimensional (2D) heterostructures have been attracting public attention due to their distinctive properties. However, the pristine materials that can form in-plane heterostructures are reported only for graphene, hexagonal BN, transition-metal dichalcogenides. It will be of great significance to explore more suitable 2D materials for constructing such ingenious heterostructures. Here, we demonstrate two types of novel seamless in-plane heterostructures combined by pristine Sb and Bi monolayers by means of first-principle approach based on density functional theory. Our results indicate that external strain can serve as an effective strategy for bandgap engineering, and the transition from semiconductor to metal occurs when a compressive strain of -8% is applied. In addition, the designed heterostructures possess direct band gaps with high carrier mobility (˜4000 cm2 V-1 s-1). And the mobility of electrons and holes have huge disparity along the direction perpendicular to the interface of Sb/Bi in-plane heterostructures. It is favorable for carriers to separate spatially. Finally, we find that the band edge positions of Sb/Bi in-plane heterostructures can meet the reduction potential of hydrogen generation in photocatalysis. Our results not only offer alternative materials to construct versatile in-plane heterostructures, but also highlight the applications of 2D in-plane heterostructures in diverse nanodevices and photocatalysis.

Surface- and interface-engineered heterostructures for solar hydrogen generation

Science.gov (United States)

Chen, Xiangyan; Li, Yanrui; Shen, Shaohua

2018-04-01

Photoelectrochemical (PEC) water splitting based on semiconductor photoelectrodes provides a promising platform for reducing environmental pollution and solving the energy crisis by developing clean, sustainable and environmentally friendly hydrogen energy. In this context, metal oxides with their advantages including low cost, good chemical stability and environmental friendliness, have attracted extensive attention among the investigated candidates. However, the large bandgap, poor charge transfer ability and high charge recombination rate limit the PEC performance of metal oxides as photoelectrodes. To solve this limitation, many approaches toward enhanced PEC water splitting performance, which focus on surface and interface engineering, have been presented. In this topical review, we concentrate on the heterostructure design of some typical metal oxides with narrow bandgaps (e.g. Fe2O3, WO3, BiVO4 and Cu2O) as photoelectrodes. An overview of the surface- and interface-engineered heterostructures, including semiconductor heterojunctions, surface protection, surface passivation and cocatalyst decoration, will be given to introduce the recent advances in metal oxide heterostructures for PEC water splitting. This article aims to provide fundamental references and principles for designing metal oxide heterostructures with high activity and stability as photoelectrodes for PEC solar hydrogen generation.

Semiconductor heterostructures and optimization of light-trapping structures for efficient thin-film solar cells

International Nuclear Information System (INIS)

McPheeters, Claiborne O; Yu, Edward T; Hu, Dongzhi; Schaadt, Daniel M

2012-01-01

Sub-wavelength photonic structures and nanoscale materials have the potential to greatly improve the efficiencies of solar cells by enabling maximum absorption of sunlight. Semiconductor heterostructures provide versatile opportunities for improving absorption of infrared radiation in photovoltaic devices, which accounts for half of the power in the solar spectrum. These ideas can be combined in quantum-well solar cells and related structures in which sub-wavelength metal and dielectric scattering elements are integrated for light trapping. Measurements and simulations of GaAs solar cells with less than one micron of active material demonstrate the benefits of incorporating In(Ga)As quantum-wells and quantum-dots to improve their performance. Simulations that incorporate a realistic model of absorption in quantum-wells show that the use of broadband photonic structures with such devices can substantially improve the benefit of incorporating heterostructures, enabling meaningful improvements in their performance

Theoretical prediction of high electron mobility in multilayer MoS2 heterostructured with MoSe2

Science.gov (United States)

Ji, Liping; Shi, Juan; Zhang, Z. Y.; Wang, Jun; Zhang, Jiachi; Tao, Chunlan; Cao, Haining

2018-01-01

Two-dimensional (2D) MoS2 has been considered to be one of the most promising semiconducting materials with the potential to be used in novel nanoelectronic devices. High carrier mobility in the semiconductor is necessary to guarantee a low power dissipation and a high switch speed of the corresponding electronic device. Strain engineering in 2D materials acts as an important approach to tailor and design their electronic and carrier transport properties. In this work, strain is introduced to MoS2 through perpendicularly building van der Waals heterostructures MoSe2-MoS2. Our first-principles calculations demonstrate that acoustic-phonon-limited electron mobility can be significantly enhanced in the heterostructures compared with that in pure multilayer MoS2. It is found that the effective electron mass and the deformation potential constant are relatively smaller in the heterostructures, which is responsible for the enhancement in the electron mobility. Overall, the electron mobility in the heterostructures is about 1.5 times or more of that in pure multilayer MoS2 with the same number of layers for the studied structures. These results indicate that MoSe2 is an excellent material to be heterostructured with multilayer MoS2 to improve the charge transport property.

Cathodoluminescence of semiconductors in the scanning electron microscope

International Nuclear Information System (INIS)

Noriegas, Javier Piqueras de

2008-01-01

Full text: Cathodoluminescence (CL) in the scanning electron microscope (SEM) is a nondestructive technique, useful for characterization of optical and electronic properties of semiconductors, with spatial resolution. The contrast in the images of CL is related to the presence of crystalline defects, precipitates or impurities and provides information on their spatial distribution. CL spectra allows to study local energy position of localized electronic states. The application of the CL is extended to semiconductor very different characteristics, such as bulk material, heterostructures, nanocrystalline film, porous semiconductor, nanocrystals, nanowires and other nano-and microstructures. In the case of wafers, provides information on the homogeneity of their electronic characteristics, density of dislocations, grain sub frontiers, distribution of impurities and so on. while on the study of heterostructures CL images can determine, for example, the presence of misfit dislocations at the interface between different sheets, below the outer surface of the sample. In the study of other low dimensional structures, such as nanocrystalline films, nanoparticles and nano-and microstructures are observed elongated in some cases quantum confinement effects from the CL spectra. Moreover, larger structures, the order of hundreds of nanometers, with forms of wires, tubes or strips, is that in many semiconductor materials, mainly oxides, the behavior of luminescence is different from bulk material. The microstructures have a different structure of defects and a greater influence of the surface, which in some cases leads to a higher emission efficiency and a different spectral distribution. The presentation describes the principle of the CL technique and examples of its application in the characterization of a wide range of both semiconductor materials of different composition, and of different sizes ranging from nanostructures to bulk samples

Data Mining for New Two- and One-Dimensional Weakly Bonded Solids and Lattice-Commensurate Heterostructures.

Science.gov (United States)

Cheon, Gowoon; Duerloo, Karel-Alexander N; Sendek, Austin D; Porter, Chase; Chen, Yuan; Reed, Evan J

2017-03-08

Layered materials held together by weak interactions including van der Waals forces, such as graphite, have attracted interest for both technological applications and fundamental physics in their layered form and as an isolated single-layer. Only a few dozen single-layer van der Waals solids have been subject to considerable research focus, although there are likely to be many more that could have superior properties. To identify a broad spectrum of layered materials, we present a novel data mining algorithm that determines the dimensionality of weakly bonded subcomponents based on the atomic positions of bulk, three-dimensional crystal structures. By applying this algorithm to the Materials Project database of over 50,000 inorganic crystals, we identify 1173 two-dimensional layered materials and 487 materials that consist of weakly bonded one-dimensional molecular chains. This is an order of magnitude increase in the number of identified materials with most materials not known as two- or one-dimensional materials. Moreover, we discover 98 weakly bonded heterostructures of two-dimensional and one-dimensional subcomponents that are found within bulk materials, opening new possibilities for much-studied assembly of van der Waals heterostructures. Chemical families of materials, band gaps, and point groups for the materials identified in this work are presented. Point group and piezoelectricity in layered materials are also evaluated in single-layer forms. Three hundred and twenty-five of these materials are expected to have piezoelectric monolayers with a variety of forms of the piezoelectric tensor. This work significantly extends the scope of potential low-dimensional weakly bonded solids to be investigated.

High-resolution three-dimensional mapping of semiconductor dopant potentials

DEFF Research Database (Denmark)

Twitchett, AC; Yates, TJV; Newcomb, SB

2007-01-01

Semiconductor device structures are becoming increasingly three-dimensional at the nanometer scale. A key issue that must be addressed to enable future device development is the three-dimensional mapping of dopant distributions, ideally under "working conditions". Here we demonstrate how a combin......Semiconductor device structures are becoming increasingly three-dimensional at the nanometer scale. A key issue that must be addressed to enable future device development is the three-dimensional mapping of dopant distributions, ideally under "working conditions". Here we demonstrate how...... a combination of electron holography and electron tomography can be used to determine quantitatively the three-dimensional electrostatic potential in an electrically biased semiconductor device with nanometer spatial resolution....

Preparations and Characterizations of Luminescent Two Dimensional Organic-inorganic Perovskite Semiconductors

Directory of Open Access Journals (Sweden)

Sanjun Zhang

2010-05-01

Full Text Available This article reviews the synthesis, structural and optical characterizations of some novel luminescent two dimensional organic-inorganic perovskite (2DOIP semiconductors. These 2DOIP semiconductors show a self-assembled nano-layered structure, having the electronic structure of multi-quantum wells. 2DOIP thin layers and nanoparticles have been prepared through different methods. The structures of the 2DOIP semiconductors are characterized by atomic force microscopy and X-ray diffraction. The optical properties of theb DOIP semiconductors are characterized from absorption and photoluminescence spectra measured at room and low temperatures. Influences of different components, in particular the organic parts, on the structural and optical properties of the 2DOIP semiconductors are discussed.

Structural defects in cubic semiconductors characterized by aberration-corrected scanning transmission electron microscopy

Energy Technology Data Exchange (ETDEWEB)

Arroyo Rojas Dasilva, Yadira; Kozak, Roksolana; Erni, Rolf; Rossell, Marta D., E-mail: marta.rossell@empa.ch

2017-05-15

The development of new electro-optical devices and the realization of novel types of transistors require a profound understanding of the structural characteristics of new semiconductor heterostructures. This article provides a concise review about structural defects which occur in semiconductor heterostructures on the basis of micro-patterned Si substrates. In particular, one- and two-dimensional crystal defects are being discussed which are due to the plastic relaxation of epitaxial strain caused by the misfit of crystal lattices. Besides a few selected examples from literature, we treat in particular crystal defects occurring in GaAs/Si, Ge/Si and β-SiC/Si structures which are studied by high-resolution annular dark-field scanning transmission electron microscopy. The relevance of this article is twofold; firstly, it should provide a collection of data which are of help for the identification and characterization of defects in cubic semiconductors by means of atomic-resolution imaging, and secondly, the experimental data shall provide a basis for advancing the understanding of device characteristics with the aid of theoretical modelling by considering the defective nature of strained semiconductor heterostructures. - Highlights: • The heterogeneous integration of high-quality compound semiconductors remains a challenge. • Lattice defects cause severe degradation of the semiconductor device performances. • Aberration-corrected HAADF-STEM allows atomic-scale characterization of defects. • An overview of lattice defects found in cubic semiconductors is presented. • Theoretical modelling and calculations are needed to determine the defect properties.

Space- and time-dependent quantum dynamics of spatially indirect excitons in semiconductor heterostructures

Energy Technology Data Exchange (ETDEWEB)

Grasselli, Federico, E-mail: federico.grasselli@unimore.it; Goldoni, Guido, E-mail: guido.goldoni@unimore.it [Department of Physics, Informatics and Mathematics, University of Modena and Reggio Emilia, Modena (Italy); CNR-NANO S3, Institute for Nanoscience, Via Campi 213/a, 41125 Modena (Italy); Bertoni, Andrea, E-mail: andrea.bertoni@nano.cnr.it [CNR-NANO S3, Institute for Nanoscience, Via Campi 213/a, 41125 Modena (Italy)

2015-01-21

We study the unitary propagation of a two-particle one-dimensional Schrödinger equation by means of the Split-Step Fourier method, to study the coherent evolution of a spatially indirect exciton (IX) in semiconductor heterostructures. The mutual Coulomb interaction of the electron-hole pair and the electrostatic potentials generated by external gates and acting on the two particles separately are taken into account exactly in the two-particle dynamics. As relevant examples, step/downhill and barrier/well potential profiles are considered. The space- and time-dependent evolutions during the scattering event as well as the asymptotic time behavior are analyzed. For typical parameters of GaAs-based devices, the transmission or reflection of the pair turns out to be a complex two-particle process, due to comparable and competing Coulomb, electrostatic, and kinetic energy scales. Depending on the intensity and anisotropy of the scattering potentials, the quantum evolution may result in excitation of the IX internal degrees of freedom, dissociation of the pair, or transmission in small periodic IX wavepackets due to dwelling of one particle in the barrier region. We discuss the occurrence of each process in the full parameter space of the scattering potentials and the relevance of our results for current excitronic technologies.

GaN heterostructures for biosensing and radiation detection

Energy Technology Data Exchange (ETDEWEB)

Howgate, John D.

2012-12-11

In this thesis I show the results from our investigation of the interface between gallium nitride wide bandgap semiconductor heterostructures and (bio)molecular systems on their surfaces for biosensing, bioelectronics, and photoelectric applications, with a large emphasis on the processes arising from high energy ionizing irradiation, including heterostructure photoelectric gain mechanisms. Wide bandgap semiconductors, such as gallium nitride, have received increasing attention as potential components in advanced organic/inorganic hybrid systems. Working to further this topic, we determine a new semiconductor alignment required for low energy photo-induced charge transfer ionization of alkyl chains well below the energy normally required for molecular cleavage, show original results of the influence of binding methods on enzyme functionality in conjunction with a novel electrochemical and environmental control system and demonstrate new possibilities to significantly improve upon pH measurements through the use of high sensitivity devices. Furthermore, based on the extension of this work to support future studies of radiation effects on cell systems, we present a detailed characterization of new simultaneous chemical sensing and ionizing radiation dosimetry using single devices. We found that their pH sensitivity was retained during X-ray irradiation and that the fundamental characteristics can be used to separate the irradiation signal from the pH response without compromising operational stability. These data provide clear indications of the separate response mechanism tied to the presence of a two-dimensional electron gas channel. Here, we found new results exhibiting exceptionally high gains and independence of the well-known persistent photoconductivity for soft X-rays and high energy particles in the ultralow dose-rate regime. This material system provides the capability for high sensitivity and resolution real time monitoring, which is competitive with and

GaN heterostructures for biosensing and radiation detection

International Nuclear Information System (INIS)

Howgate, John D.

2012-01-01

In this thesis I show the results from our investigation of the interface between gallium nitride wide bandgap semiconductor heterostructures and (bio)molecular systems on their surfaces for biosensing, bioelectronics, and photoelectric applications, with a large emphasis on the processes arising from high energy ionizing irradiation, including heterostructure photoelectric gain mechanisms. Wide bandgap semiconductors, such as gallium nitride, have received increasing attention as potential components in advanced organic/inorganic hybrid systems. Working to further this topic, we determine a new semiconductor alignment required for low energy photo-induced charge transfer ionization of alkyl chains well below the energy normally required for molecular cleavage, show original results of the influence of binding methods on enzyme functionality in conjunction with a novel electrochemical and environmental control system and demonstrate new possibilities to significantly improve upon pH measurements through the use of high sensitivity devices. Furthermore, based on the extension of this work to support future studies of radiation effects on cell systems, we present a detailed characterization of new simultaneous chemical sensing and ionizing radiation dosimetry using single devices. We found that their pH sensitivity was retained during X-ray irradiation and that the fundamental characteristics can be used to separate the irradiation signal from the pH response without compromising operational stability. These data provide clear indications of the separate response mechanism tied to the presence of a two-dimensional electron gas channel. Here, we found new results exhibiting exceptionally high gains and independence of the well-known persistent photoconductivity for soft X-rays and high energy particles in the ultralow dose-rate regime. This material system provides the capability for high sensitivity and resolution real time monitoring, which is competitive with and

Electron scattering times in ZnO based polar heterostructures

Energy Technology Data Exchange (ETDEWEB)

Falson, J., E-mail: j.falson@fkf.mpg.de [Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), The University of Tokyo, Tokyo 113-8656 (Japan); Department of Advanced Materials Science, The University of Tokyo, Kashiwa 277-8561 (Japan); Max Planck Institute for Solid State Research, D-70569 Stuttgart (Germany); Kozuka, Y. [Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), The University of Tokyo, Tokyo 113-8656 (Japan); Smet, J. H. [Max Planck Institute for Solid State Research, D-70569 Stuttgart (Germany); Arima, T. [Department of Advanced Materials Science, The University of Tokyo, Kashiwa 277-8561 (Japan); RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198 (Japan); Tsukazaki, A. [Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan); PRESTO, Japan Science and Technology Agency (JST), Tokyo 102-0075 (Japan); Kawasaki, M. [Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), The University of Tokyo, Tokyo 113-8656 (Japan); RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198 (Japan)

2015-08-24

The remarkable historic advances experienced in condensed matter physics have been enabled through the continued exploration and proliferation of increasingly richer and cleaner material systems. In this work, we report on the scattering times of charge carriers confined in state-of-the-art MgZnO/ZnO heterostructures displaying electron mobilities in excess of 10{sup 6} cm{sup 2}/V s. Through an examination of low field quantum oscillations, we obtain the effective mass of charge carriers, along with the transport and quantum scattering times. These times compare favorably with high mobility AlGaAs/GaAs heterostructures, suggesting the quality of MgZnO/ZnO heterostructures now rivals that of traditional semiconductors.

Complexes of dipolar excitons in layered quasi-two-dimensional nanostructures

Science.gov (United States)

Bondarev, Igor V.; Vladimirova, Maria R.

2018-04-01

We discuss neutral and charged complexes (biexcitons and trions) formed by indirect excitons in layered quasi-two-dimensional semiconductor heterostructures. Indirect excitons—long-lived neutral Coulomb-bound pairs of electrons and holes of different layers—have been known for semiconductor coupled quantum wells and have recently been reported for van der Waals heterostructures such as double bilayer graphene and transition-metal dichalcogenides. Using the configuration space approach, we derive the analytical expressions for the trion and biexciton binding energies as a function of interlayer distance. The method captures essential kinematics of complex formation to reveal significant binding energies, up to a few tens of meV for typical interlayer distances ˜3 -5 Å , with the trion binding energy always being greater than that of the biexciton. Our results can contribute to the understanding of more complex many-body phenomena such as exciton Bose-Einstein condensation and Wigner-like electron-hole crystallization in layered semiconductor heterostructures.

Nanoscale semiconductor-insulator-metal core/shell heterostructures: facile synthesis and light emission

Science.gov (United States)

Li, Gong Ping; Chen, Rui; Guo, Dong Lai; Wong, Lai Mun; Wang, Shi Jie; Sun, Han Dong; Wu, Tom

2011-08-01

Controllably constructing hierarchical nanostructures with distinct components and designed architectures is an important theme of research in nanoscience, entailing novel but reliable approaches of bottom-up synthesis. Here, we report a facile method to reproducibly create semiconductor-insulator-metal core/shell nanostructures, which involves first coating uniform MgO shells onto metal oxide nanostructures in solution and then decorating them with Au nanoparticles. The semiconductor nanowire core can be almost any material and, herein, ZnO, SnO2 and In2O3 are used as examples. We also show that linear chains of short ZnO nanorods embedded in MgO nanotubes and porous MgO nanotubes can be obtained by taking advantage of the reduced thermal stability of the ZnO core. Furthermore, after MgO shell-coating and the appropriate annealing treatment, the intensity of the ZnO near-band-edge UV emission becomes much stronger, showing a 25-fold enhancement. The intensity ratio of the UV/visible emission can be increased further by decorating the surface of the ZnO/MgO nanowires with high-density plasmonic Au nanoparticles. These heterostructured semiconductor-insulator-metal nanowires with tailored morphologies and enhanced functionalities have great potential for use as nanoscale building blocks in photonic and electronic applications.Controllably constructing hierarchical nanostructures with distinct components and designed architectures is an important theme of research in nanoscience, entailing novel but reliable approaches of bottom-up synthesis. Here, we report a facile method to reproducibly create semiconductor-insulator-metal core/shell nanostructures, which involves first coating uniform MgO shells onto metal oxide nanostructures in solution and then decorating them with Au nanoparticles. The semiconductor nanowire core can be almost any material and, herein, ZnO, SnO2 and In2O3 are used as examples. We also show that linear chains of short ZnO nanorods embedded in

High-Performance Nonvolatile Organic Field-Effect Transistor Memory Based on Organic Semiconductor Heterostructures of Pentacene/P13/Pentacene as Both Charge Transport and Trapping Layers.

Science.gov (United States)

Li, Wen; Guo, Fengning; Ling, Haifeng; Zhang, Peng; Yi, Mingdong; Wang, Laiyuan; Wu, Dequn; Xie, Linghai; Huang, Wei

2017-08-01

Nonvolatile organic field-effect transistor (OFET) memory devices based on pentacene/ N , N '-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (P13)/pentacene trilayer organic heterostructures have been proposed. The discontinuous n-type P13 embedded in p-type pentacene layers can not only provide electrons in the semiconductor layer that facilitates electron trapping process; it also works as charge trapping sites, which is attributed to the quantum well-like pentacene/P13/pentacene organic heterostructures. The synergistic effects of charge trapping in the discontinuous P13 and the charge-trapping property of the poly(4-vinylphenol) (PVP) layer remarkably improve the memory performance. In addition, the trilayer organic heterostructures have also been successfully applied to multilevel and flexible nonvolatile memory devices. The results provide a novel design strategy to achieve high-performance nonvolatile OFET memory devices and allow potential applications for different combinations of various organic semiconductor materials in OFET memory.

High‐Performance Nonvolatile Organic Field‐Effect Transistor Memory Based on Organic Semiconductor Heterostructures of Pentacene/P13/Pentacene as Both Charge Transport and Trapping Layers

Science.gov (United States)

Li, Wen; Guo, Fengning; Ling, Haifeng; Zhang, Peng; Wang, Laiyuan; Wu, Dequn

2017-01-01

Nonvolatile organic field‐effect transistor (OFET) memory devices based on pentacene/N,N′‐ditridecylperylene‐3,4,9,10‐tetracarboxylic diimide (P13)/pentacene trilayer organic heterostructures have been proposed. The discontinuous n‐type P13 embedded in p‐type pentacene layers can not only provide electrons in the semiconductor layer that facilitates electron trapping process; it also works as charge trapping sites, which is attributed to the quantum well‐like pentacene/P13/pentacene organic heterostructures. The synergistic effects of charge trapping in the discontinuous P13 and the charge‐trapping property of the poly(4‐vinylphenol) (PVP) layer remarkably improve the memory performance. In addition, the trilayer organic heterostructures have also been successfully applied to multilevel and flexible nonvolatile memory devices. The results provide a novel design strategy to achieve high‐performance nonvolatile OFET memory devices and allow potential applications for different combinations of various organic semiconductor materials in OFET memory. PMID:28852619

Spin injection and filtering in halfmetal/semiconductor (CrAs/GaAs) heterostructures

International Nuclear Information System (INIS)

Stickler, B. A.; Ertler, C.; Pötz, W.; Chioncel, L.; Arrigoni, E.

2013-01-01

Theoretical investigations of spin-dependent transport in GaAS/CrAs/GaAs halfmetal-semiconductor heterostructures indicate that this system is a candidate for an efficient room temperature spin injector and filter. The spin dependent electronic structure of zincblende CrAs and the band offset between GaAs and CrAs are determined by ab-initio calculations within the method of linear muffin tin orbitals (LMTO). This band structure is mapped onto an effective sp 3 d 5 s* nearest neighbor tight-binding (TB) Hamiltonian and the steady-state transport characteristic is calculated within a non-equilibrium Green’s function approach. Even at room temperature we find current spin polarizations up to 97%

In situ degradation studies of two-dimensional WSe₂-graphene heterostructures.

Science.gov (United States)

Wang, B; Eichfield, S M; Wang, D; Robinson, J A; Haque, M A

2015-09-14

Heterostructures of two-dimensional materials can be vulnerable to thermal degradation due to structural and interfacial defects as well as thermal expansion mismatch, yet a systematic study does not exist in the literature. In this study, we investigate the degradation of freestanding WSe2-graphene heterostructures due to heat and charge flow by performing in situ experiments inside a transmission electron microscope. Experimental results show that purely thermal loading requires higher temperatures (>850 °C), about 150 °C higher than that under combined electrical and thermal loading. In both cases, selenium is the first element to decompose and migration of silicon atoms from the test structure to the freestanding specimen initiates rapid degradation through the formation of tungsten disilicide and silicon carbide. The role of the current flow is to enhance the migration of silicon from the sample holder and to knock-out the selenium atoms. The findings of this study provide fundamental insights into the degradation of WSe2-graphene heterostructures and inspire their application in electronics for use in harsh environments.

Atomic-Resolution Spectrum Imaging of Semiconductor Nanowires.

Science.gov (United States)

Zamani, Reza R; Hage, Fredrik S; Lehmann, Sebastian; Ramasse, Quentin M; Dick, Kimberly A

2018-03-14

Over the past decade, III-V heterostructure nanowires have attracted a surge of attention for their application in novel semiconductor devices such as tunneling field-effect transistors (TFETs). The functionality of such devices critically depends on the specific atomic arrangement at the semiconductor heterointerfaces. However, most of the currently available characterization techniques lack sufficient spatial resolution to provide local information on the atomic structure and composition of these interfaces. Atomic-resolution spectrum imaging by means of electron energy-loss spectroscopy (EELS) in the scanning transmission electron microscope (STEM) is a powerful technique with the potential to resolve structure and chemical composition with sub-angstrom spatial resolution and to provide localized information about the physical properties of the material at the atomic scale. Here, we demonstrate the use of atomic-resolution EELS to understand the interface atomic arrangement in three-dimensional heterostructures in semiconductor nanowires. We observed that the radial interfaces of GaSb-InAs heterostructure nanowires are atomically abrupt, while the axial interface in contrast consists of an interfacial region where intermixing of the two compounds occurs over an extended spatial region. The local atomic configuration affects the band alignment at the interface and, hence, the charge transport properties of devices such as GaSb-InAs nanowire TFETs. STEM-EELS thus represents a very promising technique for understanding nanowire physical properties, such as differing electrical behavior across the radial and axial heterointerfaces of GaSb-InAs nanowires for TFET applications.

Heterostructures (CaSrBa)F2 on InP for Optoelectronics

National Research Council Canada - National Science Library

Pyshkin, Sergei

1995-01-01

.... MBE and Laser Vacuum Epitaxy (LVE) growth methods for semiconductor-semiconductor (SS) and semiconductor-crystalline dielectric-semiconductor heterostructures are considered as well as experimental facilities for these processes are elaborated.

High mobility two-dimensional electron gases in nitride heterostructures with high Al composition AlGaN alloy barriers

International Nuclear Information System (INIS)

Li Guowang; Cao Yu; Xing Huili Grace; Jena, Debdeep

2010-01-01

We report high-electron mobility nitride heterostructures with >70% Al composition AlGaN alloy barriers grown by molecular beam epitaxy. Direct growth of such AlGaN layers on GaN resulted in hexagonal trenches and a low mobility polarization-induced charge. By applying growth interruption at the heterojunction, the surface morphology improved dramatically and the room temperature two-dimensional electron gas (2DEG) mobility increased by an order of magnitude, exceeding 1300 cm 2 /V s. The 2DEG density was tunable at 0.4-3.7x10 13 /cm 2 by varying the total barrier thickness (t). Surface barrier heights of the heterostructures were extracted and exhibited dependence on t.

Electronic properties of electron and hole in type-II semiconductor nano-heterostructures

Science.gov (United States)

Rahul, K. Suseel; Souparnika, C.; Salini, K.; Mathew, Vincent

2016-05-01

In this project, we record the orbitals of electron and hole in type-II (CdTe/CdSe/CdTe/CdSe) semiconductor nanocrystal using effective mass approximation. In type-II the band edges of both valance and conduction band are higher than that of shell. So the electron and hole get confined in different layers of the hetero-structure. The energy eigen values and eigen functions are calculated by solving Schrodinger equation using finite difference matrix method. Based on this we investigate the effect of shell thickness and well width on energy and probability distribution of ground state (1s) and few excited states (1p,1d,etc). Our results predict that, type-II quantum dots have significant importance in photovoltaic applications.

Electronic properties of electron and hole in type-II semiconductor nano-heterostructures

Energy Technology Data Exchange (ETDEWEB)

Rahul, K. Suseel [Department of Physics, Central University of Kerala, Riverside Transit Campus, Kasaragod, Kerala. India (India); Department of Physics, Sri Vyasa NSS College, Wadakkancheri, Thrissur, Kerala, PIN:680623. India (India); Souparnika, C. [Department of Physics, Sri Vyasa NSS College, Wadakkancheri, Thrissur, Kerala, PIN:680623. India (India); Salini, K.; Mathew, Vincent, E-mail: vincent@cukerala.ac.in [Department of Physics, Central University of Kerala, Riverside Transit Campus, Kasaragod, Kerala. India (India)

2016-05-06

In this project, we record the orbitals of electron and hole in type-II (CdTe/CdSe/CdTe/CdSe) semiconductor nanocrystal using effective mass approximation. In type-II the band edges of both valance and conduction band are higher than that of shell. So the electron and hole get confined in different layers of the hetero-structure. The energy eigen values and eigen functions are calculated by solving Schrodinger equation using finite difference matrix method. Based on this we investigate the effect of shell thickness and well width on energy and probability distribution of ground state (1s) and few excited states (1p,1d,etc). Our results predict that, type-II quantum dots have significant importance in photovoltaic applications.

Vertical versus Lateral Two-Dimensional Heterostructures: On the Topic of Atomically Abrupt p/n-Junctions.

Science.gov (United States)

Zhou, Ruiping; Ostwal, Vaibhav; Appenzeller, Joerg

2017-08-09

The key appeal of two-dimensional (2D) materials such as graphene, transition metal dichalcogenides (TMDs), or phosphorene for electronic applications certainly lies in their atomically thin nature that offers opportunities for devices beyond conventional transistors. It is also this property that makes them naturally suited for a type of integration that is not possible with any three-dimensional (3D) material, that is, forming heterostructures by stacking dissimilar 2D materials together. Recently, a number of research groups have reported on the formation of atomically sharp p/n-junctions in various 2D heterostructures that show strong diode-type rectification. In this article, we will show that truly vertical heterostructures do exhibit much smaller rectification ratios and that the reported results on atomically sharp p/n-junctions can be readily understood within the framework of the gate and drain voltage response of Schottky barriers that are involved in the lateral transport.

Anomalous low-temperature Coulomb drag in graphene-GaAs heterostructures.

Science.gov (United States)

Gamucci, A; Spirito, D; Carrega, M; Karmakar, B; Lombardo, A; Bruna, M; Pfeiffer, L N; West, K W; Ferrari, A C; Polini, M; Pellegrini, V

2014-12-19

Vertical heterostructures combining different layered materials offer novel opportunities for applications and fundamental studies. Here we report a new class of heterostructures comprising a single-layer (or bilayer) graphene in close proximity to a quantum well created in GaAs and supporting a high-mobility two-dimensional electron gas. In our devices, graphene is naturally hole-doped, thereby allowing for the investigation of electron-hole interactions. We focus on the Coulomb drag transport measurements, which are sensitive to many-body effects, and find that the Coulomb drag resistivity significantly increases for temperatures law, therefore displaying a notable departure from the ordinary quadratic temperature dependence expected in a weakly correlated Fermi-liquid. This anomalous behaviour is consistent with the onset of strong interlayer correlations. Our heterostructures represent a new platform for the creation of coherent circuits and topologically protected quantum bits.

Synthesis; characterization; and growth mechanism of Au/CdS heterostructured nanoflowers constructed with nanorods

International Nuclear Information System (INIS)

Kong Qingcheng; Wu Rong; Feng Xiumei; Ye Cui; Hu Guanqi; Hu Jianqiang; Chen Zhiwu

2011-01-01

Research highlights: → Well-defined and flower-shaped Au/CdS heterostructured nanocrystals were for the first time synthesized. → The Au-nanorod-induced hydrothermal strategy was for the first time used to fabricate metal/semiconductor heterostructured nanomaterials. → A preliminary crystal growing mechanism was also proposed for better understanding the growth process of other Au/semiconductor heterostructure nanocrystals. → The route devised here should also be extendable to fabricate other Au/semiconductor heterostructure nanomaterials. - Abstract: Gold/sulfide cadmium (Au/CdS) heterostructured nanocrystals with a flower-like shape were for the first time synthesized through an Au-nanorod-induced hydrothermal method. The Au/CdS nanoflowers possessed the average size of about 350 nm while the nanorods constructing the nanoflowers had the average diameter, length, and aspect ratio of approximately 50 nm, 100 nm, and 2, respectively. Our method suggested that Au-nanorods played a decisive role in the formation of Au/CdS heterostructured nanoflowers, demonstrated by high-resolution transmission electron microscopy (HRTEM), electron diffraction (ED), energy-dispersive X-ray spectroscopy (EDS), and UV-visible absorption spectroscopy measurements. A preliminary experiment model to reveal the Au/CdS growth mechanism was also put forward. The route devised here should be perhaps extendable to fabricate other Au/semiconductor heterostructured nanomaterials, and the Au/CdS nanoflowers may have potential applications in nanodevices, biolabels, and clinical detection and diagnosis.

High-Current Gain Two-Dimensional MoS 2 -Base Hot-Electron Transistors

KAUST Repository

Torres, Carlos M.

2015-12-09

The vertical transport of nonequilibrium charge carriers through semiconductor heterostructures has led to milestones in electronics with the development of the hot-electron transistor. Recently, significant advances have been made with atomically sharp heterostructures implementing various two-dimensional materials. Although graphene-base hot-electron transistors show great promise for electronic switching at high frequencies, they are limited by their low current gain. Here we show that, by choosing MoS2 and HfO2 for the filter barrier interface and using a noncrystalline semiconductor such as ITO for the collector, we can achieve an unprecedentedly high-current gain (α ∼ 0.95) in our hot-electron transistors operating at room temperature. Furthermore, the current gain can be tuned over 2 orders of magnitude with the collector-base voltage albeit this feature currently presents a drawback in the transistor performance metrics such as poor output resistance and poor intrinsic voltage gain. We anticipate our transistors will pave the way toward the realization of novel flexible 2D material-based high-density, low-energy, and high-frequency hot-carrier electronic applications. © 2015 American Chemical Society.

High-Current Gain Two-Dimensional MoS 2 -Base Hot-Electron Transistors

KAUST Repository

Torres, Carlos M.; Lan, Yann Wen; Zeng, Caifu; Chen, Jyun Hong; Kou, Xufeng; Navabi, Aryan; Tang, Jianshi; Montazeri, Mohammad; Adleman, James R.; Lerner, Mitchell B.; Zhong, Yuan Liang; Li, Lain-Jong; Chen, Chii Dong; Wang, Kang L.

2015-01-01

The vertical transport of nonequilibrium charge carriers through semiconductor heterostructures has led to milestones in electronics with the development of the hot-electron transistor. Recently, significant advances have been made with atomically sharp heterostructures implementing various two-dimensional materials. Although graphene-base hot-electron transistors show great promise for electronic switching at high frequencies, they are limited by their low current gain. Here we show that, by choosing MoS2 and HfO2 for the filter barrier interface and using a noncrystalline semiconductor such as ITO for the collector, we can achieve an unprecedentedly high-current gain (α ∼ 0.95) in our hot-electron transistors operating at room temperature. Furthermore, the current gain can be tuned over 2 orders of magnitude with the collector-base voltage albeit this feature currently presents a drawback in the transistor performance metrics such as poor output resistance and poor intrinsic voltage gain. We anticipate our transistors will pave the way toward the realization of novel flexible 2D material-based high-density, low-energy, and high-frequency hot-carrier electronic applications. © 2015 American Chemical Society.

Prediction of two-dimensional electron gas mediated magnetoelectric coupling at ferroelectric PbTiO3/SrTiO3 heterostructures

Science.gov (United States)

Wei, Lan-ying; Lian, Chao; Meng, Sheng

2017-05-01

First-principles calculations predict the emergence of magnetoelectric coupling mediated by two-dimensional electron gas (2DEG) at the ferroelectric PbTiO3/SrTiO3 heterostructure. Free electrons endowed by naturally existing oxygen vacancies in SrTiO3 are driven to the heterostructure interface under the polarizing field of ferroelectric PbTiO3 to form a 2DEG. The electrons are captured by interfacial Ti atoms, which surprisingly exhibits ferromagnetism even at room temperature with a small critical density of ˜15.5 μ C /cm2 . The ferroelectricity-controlled ferromagnetism mediated by interfacial 2DEG shows strong magnetoelectric coupling strength, enabling convenient control of magnetism by electric field and vice versa. The PbTiO3/SrTiO3 heterostructure is cheap, easily grown, and controllable, promising future applications in low-cost spintronics and information storage at ambient condition.

Scattering times in the two-dimensional electron gas of AlxGa1-xN/AlN/GaN heterostructures

International Nuclear Information System (INIS)

Han Xiuxun; Honda, Yoshio; Narita, Tetsuo; Yamaguchi, Masahito; Sawaki, Nobuhiko; Tanaka, Tooru; Guo Qixin; Nishio, Mitsushiro

2009-01-01

Low-field Hall and Shubnikov-de Haas (SdH) measurements were performed on two-dimensional electron gas of Al 0.24 Ga 0.76 N/GaN and Al 0.24 Ga 0.76 N/AlN/GaN heterostructures at a low temperature. A dramatic improvement in electron mobility is observed in Al 0.24 Ga 0.76 N/AlN/GaN heterostructures with 1 and 2 nm thick AlN interlayers. A further increase in the AlN thickness degrades the transport behaviour. Transport and quantum scattering times were derived from the corresponding Hall mobility and the oscillatory part of the SdH signal. The ratio of the transport scattering time and the quantum scattering time increases from 3.87 in the heterostructure without the AlN interlayer to 14.34 with the 1 nm AlN interlayer and to 12.45 with the 2 nm AlN interlayer. A modified scattering calculation due to charged dislocation with a finite length suggests that dislocation related long-range scattering event tends to dominate both transport and quantum scattering times when a thin AlN interlayer is introduced.

Synthesis of Freestanding Single-crystal Perovskite Films and Heterostructures by Etching of Sacrificial Water-soluble Layers

Energy Technology Data Exchange (ETDEWEB)

Lu, Di; Baek, David J.; Hong, Seung Sae; Kourkoutis, Lena F.; Hikita, Yasuyuki; Hwang, Harold Y.

2016-08-22

The ability to create and manipulate materials in two-dimensional (2D) form has repeatedly had transformative impact on science and technology. In parallel with the exfoliation and stacking of intrinsically layered crystals, atomic-scale thin film growth of complex materials has enabled the creation of artificial 2D heterostructures with novel functionality and emergent phenomena, as seen in perovskite heterostructures. However, separation of these layers from the growth substrate has proven challenging, limiting the manipulation capabilities of these heterostructures with respect to exfoliated materials. Here we present a general method to create freestanding perovskite membranes. The key is the epitaxial growth of water-soluble Sr₃Al₂O₆ on perovskite substrates, followed by in situ growth of films and heterostructures. Millimetre-size single-crystalline membranes are produced by etching the Sr₃Al₂O₆ layer in water, providing the opportunity to transfer them to arbitrary substrates and integrate them with heterostructures of semiconductors and layered compounds.

Studies on the InAlN/InGaN/InAlN/InGaN double channel heterostructures with low sheet resistance

Science.gov (United States)

Zhang, Yachao; Wang, Zhizhe; Xu, Shengrui; Chen, Dazheng; Bao, Weimin; Zhang, Jinfeng; Zhang, Jincheng; Hao, Yue

2017-11-01

High quality InAlN/InGaN/InAlN/InGaN double channel heterostructures were proposed and grown by metal organic chemical vapor deposition. Benefiting from the adoption of the pulsed growth method and Two-Step AlN interlayer, the material quality and interface characteristics of the double channel heterostructures are satisfactory. The results of the temperature-dependent Hall effect measurement indicated that the transport properties of the double channel heterostructures were superior to those of the traditional single channel heterostructures in the whole test temperature range. Meanwhile, the sheet resistance of the double channel heterostructures reached 218.5 Ω/□ at 300 K, which is the record of InGaN-based heterostructures. The good transport properties of the InGaN double channel heterostructures are beneficial to improve the performance of the microwave power devices based on nitride semiconductors.

Quantum mechanical solver for confined heterostructure tunnel field-effect transistors

Energy Technology Data Exchange (ETDEWEB)

Verreck, Devin, E-mail: devin.verreck@imec.be; Groeseneken, Guido [imec, Kapeldreef 75, 3001 Leuven (Belgium); Department of Electrical Engineering, KU Leuven, 3001 Leuven (Belgium); Van de Put, Maarten; Sorée, Bart; Magnus, Wim [imec, Kapeldreef 75, 3001 Leuven (Belgium); Departement of Physics, Universiteit Antwerpen, 2020 Antwerpen (Belgium); Verhulst, Anne S.; Collaert, Nadine; Thean, Aaron [imec, Kapeldreef 75, 3001 Leuven (Belgium); Vandenberghe, William G. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)

2014-02-07

Heterostructure tunnel field-effect transistors (HTFET) are promising candidates for low-power applications in future technology nodes, as they are predicted to offer high on-currents, combined with a sub-60 mV/dec subthreshold swing. However, the effects of important quantum mechanical phenomena like size confinement at the heterojunction are not well understood, due to the theoretical and computational difficulties in modeling realistic heterostructures. We therefore present a ballistic quantum transport formalism, combining a novel envelope function approach for semiconductor heterostructures with the multiband quantum transmitting boundary method, which we extend to 2D potentials. We demonstrate an implementation of a 2-band version of the formalism and apply it to study confinement in realistic heterostructure diodes and p-n-i-n HTFETs. For the diodes, both transmission probabilities and current densities are found to decrease with stronger confinement. For the p-n-i-n HTFETs, the improved gate control is found to counteract the deterioration due to confinement.

Thermodynamic concepts in semiconductor quantum dot technology

International Nuclear Information System (INIS)

Shchukin, V.

2001-01-01

Major trends of the modern civilization are related to the changing of the industrial society into an information and knowledge-based society. This transformation is to a large extent based on the modern information and communication technology. The nobel prize-2000 in physics is a remarkable recognition of an extremely high significance of this kind of technology. The nobel prize has been awarded with one half jointly to Zhores I. Alferov and Herbert Kroemer for developing semiconductor heterostructures used in high-speed- and opto-electronics and one half to Jack St. Clair Kilby for this part in the invention of the integrated circuit. The development of the semiconductor heterostructures technology requires a profound understanding of the basic growth mechanisms involved in any technological process, including any type of epitaxy, either the liquid phase epitaxy (LPE), or the metalorganic vapor phase epitaxy (MOVPE), or the molecular beam epitaxy (MBE). Starting from this pioneering works on semiconductor heterostructures till present time, Professor Zh. Alferov has always paid much attention to complex and comprehensive study of the subject. This covers the growth - as well as the post-growth technology including the theoretical modeling of the technology, the characterization of the heterostructures, and the device design. Such complex approach has master mined the scientific and technological success of Abraham loffe Institute in the area of semiconductor heterostructures, and later, nano structures. (Orig../A.B.)

Optical Properties and Wave Propagation in Semiconductor-Based Two-Dimensional Photonic Crystals

International Nuclear Information System (INIS)

Mario Agio

2002-01-01

This work is a theoretical investigation on the physical properties of semiconductor-based two-dimensional photonic crystals, in particular for what concerns systems embedded in planar dielectric waveguides (GaAs/AlGaAs, GaInAsP/InP heterostructures, and self-standing membranes) or based on macro-porous silicon. The photonic-band structure of photonic crystals and photonic-crystal slabs is numerically computed and the associated light-line problem is discussed, which points to the issue of intrinsic out-of-lane diffraction losses for the photonic bands lying above the light line. The photonic states are then classified by the group theory formalism: each mode is related to an irreducible representation of the corresponding small point group. The optical properties are investigated by means of the scattering matrix method, which numerically implements a variable-angle-reflectance experiment; comparison with experiments is also provided. The analysis of surface reflectance proves the existence of selection rules for coupling an external wave to a certain photonic mode. Such rules can be directly derived from symmetry considerations. Lastly, the control of wave propagation in weak-index contrast photonic-crystal slabs is tackled in view of designing building blocks for photonic integrated circuits. The proposed designs are found to comply with the major requirements of low-loss propagation, high and single-mode transmission. These notions are then collected to model a photonic-crystal combiner for an integrated multi-wavelength-source laser

Optical Properties and Wave Propagation in Semiconductor-Based Two-Dimensional Photonic Crystals

Energy Technology Data Exchange (ETDEWEB)

Agio, Mario [Iowa State Univ., Ames, IA (United States)

2002-12-31

This work is a theoretical investigation on the physical properties of semiconductor-based two-dimensional photonic crystals, in particular for what concerns systems embedded in planar dielectric waveguides (GaAs/AlGaAs, GaInAsP/InP heterostructures, and self-standing membranes) or based on macro-porous silicon. The photonic-band structure of photonic crystals and photonic-crystal slabs is numerically computed and the associated light-line problem is discussed, which points to the issue of intrinsic out-of-lane diffraction losses for the photonic bands lying above the light line. The photonic states are then classified by the group theory formalism: each mode is related to an irreducible representation of the corresponding small point group. The optical properties are investigated by means of the scattering matrix method, which numerically implements a variable-angle-reflectance experiment; comparison with experiments is also provided. The analysis of surface reflectance proves the existence of selection rules for coupling an external wave to a certain photonic mode. Such rules can be directly derived from symmetry considerations. Lastly, the control of wave propagation in weak-index contrast photonic-crystal slabs is tackled in view of designing building blocks for photonic integrated circuits. The proposed designs are found to comply with the major requirements of low-loss propagation, high and single-mode transmission. These notions are then collected to model a photonic-crystal combiner for an integrated multi-wavelength-source laser.

Tunneling spectroscopy on semiconductors with a low surface state density

OpenAIRE

Sommerhalter, Christof; Matthes, Thomas W.; Boneberg, Johannes; Leiderer, Paul; Lux-Steiner, Martha Christina

1997-01-01

A detailed study of tunneling spectroscopy concerning semiconductors with a low surface state density is presented. For this purpose, I V curves under dark conditions and under illumination were measured on the (0001) van der Waals surface of a p-type WS2 single crystal, which is known to be free of intrinsic surface states. The measurements are interpreted by an analytical one-dimensional metal-insulator-semiconductor model, which shows that the presence of the finite tunneling current has ...

Properties of InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors modified by surface treatment

Energy Technology Data Exchange (ETDEWEB)

Gregušová, D., E-mail: Dagmar.Gregusova@savba.sk [Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, Bratislava SK-84104 (Slovakia); Gucmann, F.; Kúdela, R. [Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, Bratislava SK-84104 (Slovakia); Mičušík, M. [Polymer Institute of Slovak Academy of Sciences, Dúbravská cesta 9, Bratislava SK-84541 (Slovakia); Stoklas, R.; Válik, L. [Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, Bratislava SK-84104 (Slovakia); Greguš, J. [Faculty of Mathematics, Physics and Informatics, Comenius University, Mlynská dolina, Bratislava SK-84248 (Slovakia); Blaho, M. [Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, Bratislava SK-84104 (Slovakia); Kordoš, P. [Institute of Electronics and Photonics, Faculty of Electrical Engineering and Information Technology STU, Ilkovičova 3, Bratislava SK-81219 (Slovakia)

2017-02-15

Highlights: • AlGaAs/InGaAs/GaAs-based metal oxide semiconductor transistors-MOSHFET. • Thin Al-layer deposited in-situ and oxidize in air – gate insulator. • MOSHFET vs HFET transistor properties, density of traps evaluated. - Abstract: GaAs-based heterostructures exhibit excellent carrier transport properties, mainly the high carrier velocity. An AlGaAs-GaAs heterostructure field-effect transistor (HFET) with an InGaAs channel was prepared using metal-organic chemical vapor deposition (MOVPE). An AlOx layer was formed on the AlGaAs barrier layer by the air-assisted oxidation of a thin Al layer deposited in-situ in an MOVPE reactor immediately after AlGaAs/InGaAs growth. The HFETs and MOSHFETs exhibited a very low trap state density in the order of 10{sup 11} cm{sup −2} eV{sup −1}. Capacitance measurement yielded no significant difference between the HFET and MOSHFET structures. The formation of an AlOx layer modified the surface by partially eliminating surface states that arise from Ga-and As-based native oxides. The presence of an AlOx layer reflected in a reduced gate leakage current, which was evidenced by the two-terminal transistor measurement. Presented preparation procedure and device properties show great potential of AlGaAs/InGaAs-based MOSHFETs.

Electronic band structure of Two-Dimensional WS2/Graphene van der Waals Heterostructures

Science.gov (United States)

Henck, Hugo; Ben Aziza, Zeineb; Pierucci, Debora; Laourine, Feriel; Reale, Francesco; Palczynski, Pawel; Chaste, Julien; Silly, Mathieu G.; Bertran, François; Le Fèvre, Patrick; Lhuillier, Emmanuel; Wakamura, Taro; Mattevi, Cecilia; Rault, Julien E.; Calandra, Matteo; Ouerghi, Abdelkarim

2018-04-01

Combining single-layer two-dimensional semiconducting transition-metal dichalcogenides (TMDs) with a graphene layer in van der Waals heterostructures offers an intriguing means of controlling the electronic properties through these heterostructures. Here, we report the electronic and structural properties of transferred single-layer W S2 on epitaxial graphene using micro-Raman spectroscopy, angle-resolved photoemission spectroscopy measurements, and density functional theory (DFT) calculations. The results show good electronic properties as well as a well-defined band arising from the strong splitting of the single-layer W S2 valence band at the K points, with a maximum splitting of 0.44 eV. By comparing our DFT results with local and hybrid functionals, we find the top valence band of the experimental heterostructure is close to the calculations for suspended single-layer W S2 . Our results provide an important reference for future studies of electronic properties of W S2 and its applications in valleytronic devices.

Molecular and polymeric organic semiconductors for applications in photovoltaic devices

International Nuclear Information System (INIS)

Meinhardt, G.

2000-01-01

Photovoltaic devices based on molecular as well as polymeric semiconductors were investigated and characterized. The organic materials presented here exhibit the advantages of low price, low processing costs and the possibility of tuning their optical properties. The photovoltaic properties were investigated by photocurrent action spectroscopy and I/V-characterization and the electric field distribution in each layer by electroabsorption spectroscopy. Single layer devices of molecular semiconductors and semiconducting polymers like methyl-substituted polyparaphenylene, CN-Ether-PPV, copper-phthalocyanine, the terryleneimide DOTer, the perylene derivatives BBP-perylene and polyBBP-perylene show low photocurrents as well as a small photovoltaic effect in their pristine form. One way to enhance the performance is to blend the active layer with molecular dopands like a soluble form of titaniumoxophthalocyanine or the aromatic macromolecule RS19 or to combine two organic semiconductors in heterostructure devices. The motivation for these experiments was the optimization of either charge transfer or energy transfer from one molecule to its neighbor molecule. A model based on the internal filter effect was used for fitting the photoresponse of single layer devices. For optimising heterostructure solar cells a more sophisticated theoretical model taking into account interference effects was used. (author)

Pulsed field studies of magnetotransport in semiconductor heterostructures

International Nuclear Information System (INIS)

Dalton, K.S.H.

1999-01-01

High field magnetotransport in two classes of semiconductor heterostructures has been studied: parallel transport in InAs/(Ga,In)Sb double heterojunctions and superlattices at low temperatures (300 mK-4.2 K), and vertical transport in GaAs/AlAs short-period superlattices at 150-300 K. The experiments mainly used the Oxford pulsed magnet (∼45 T, ∼15 ms pulses). The development of the data acquisition system and experimental techniques for magnetotransport are described, including corrections to the data, required because of the rapidly changing magnetic field. Previous studies of magnetotransport in InAs/GaSb double heterojunctions are reviewed: this electron-hole system shows compensated quantum Hall plateaux, with ρ xy dips accompanied by 'anomalous' peaks in σ xx . New data show a peak between ν=1 plateaux; this behaviour and the temperature dependence of the 'anomalous' σ xx peaks are explained by considering the movement of the Fermi level amongst anticrossing electron- and hole-like levels. InAs/(Ga,In)Sb superlattices with electron:hole density ratios close to 1 exhibit large oscillations in the resistivity (maxima typically ∼20-30 x higher than minima) and conductivity components. Deep minima in ρ xy alternate with low-integer plateaux. The magnetotransport in various ideal structures is considered, to explain the experimental results. The growth of a novel structure has allowed clearer observation of the behaviour of ρ xx (giant maxima) and ρ xy (zeroes or maxima) when the contributions from each well to σ xx and σ xy approach zero. Measurements of the high field magnetotransport peak positions show that the band overlap is increased by growing 'InSb' rather than 'GaAs' interfaces (∼20% increase), increasing the indium in the (Ga,In)Sb (∼30% increase per 10% In), or growing along [111] instead of [001] (∼30% increase). Magnetophonon resonance in short-period GaAs/AlAs superlattices causes strong, electric field-dependent vertical

Two-dimensional transition metal dichalcogenides as atomically thin semiconductors: opportunities and challenges.

Science.gov (United States)

Duan, Xidong; Wang, Chen; Pan, Anlian; Yu, Ruqin; Duan, Xiangfeng

2015-12-21

The discovery of graphene has ignited intensive interest in two-dimensional layered materials (2DLMs). These 2DLMs represent a new class of nearly ideal 2D material systems for exploring fundamental chemistry and physics at the limit of single-atom thickness, and have the potential to open up totally new technological opportunities beyond the reach of existing materials. In general, there are a wide range of 2DLMs in which the atomic layers are weakly bonded together by van der Waals interactions and can be isolated into single or few-layer nanosheets. The van der Waals interactions between neighboring atomic layers could allow much more flexible integration of distinct materials to nearly arbitrarily combine and control different properties at the atomic scale. The transition metal dichalcogenides (TMDs) (e.g., MoS2, WSe2) represent a large family of layered materials, many of which exhibit tunable band gaps that can undergo a transition from an indirect band gap in bulk crystals to a direct band gap in monolayer nanosheets. These 2D-TMDs have thus emerged as an exciting class of atomically thin semiconductors for a new generation of electronic and optoelectronic devices. Recent studies have shown exciting potential of these atomically thin semiconductors, including the demonstration of atomically thin transistors, a new design of vertical transistors, as well as new types of optoelectronic devices such as tunable photovoltaic devices and light emitting devices. In parallel, there have also been considerable efforts in developing diverse synthetic approaches for the rational growth of various forms of 2D materials with precisely controlled chemical composition, physical dimension, and heterostructure interface. Here we review the recent efforts, progress, opportunities and challenges in exploring the layered TMDs as a new class of atomically thin semiconductors.

Proximity Induced Superconducting Properties in One and Two Dimensional Semiconductors

DEFF Research Database (Denmark)

Kjærgaard, Morten

This report is concerned with the properties of one and two dimensional semiconducting materials when brought into contact with a superconductor. Experimentally we study the 2D electron gas in an InGaAs/InAs heterostructure with aluminum grown in situ on the surface, and theoretically we show tha...

Room-Temperature Quantum Ballistic Transport in Monolithic Ultrascaled Al-Ge-Al Nanowire Heterostructures.

Science.gov (United States)

Sistani, Masiar; Staudinger, Philipp; Greil, Johannes; Holzbauer, Martin; Detz, Hermann; Bertagnolli, Emmerich; Lugstein, Alois

2017-08-09

Conductance quantization at room temperature is a key requirement for the utilizing of ballistic transport for, e.g., high-performance, low-power dissipating transistors operating at the upper limit of "on"-state conductance or multivalued logic gates. So far, studying conductance quantization has been restricted to high-mobility materials at ultralow temperatures and requires sophisticated nanostructure formation techniques and precise lithography for contact formation. Utilizing a thermally induced exchange reaction between single-crystalline Ge nanowires and Al pads, we achieved monolithic Al-Ge-Al NW heterostructures with ultrasmall Ge segments contacted by self-aligned quasi one-dimensional crystalline Al leads. By integration in electrostatically modulated back-gated field-effect transistors, we demonstrate the first experimental observation of room temperature quantum ballistic transport in Ge, favorable for integration in complementary metal-oxide-semiconductor platform technology.

Approximate Approaches to the One-Dimensional Finite Potential Well

Science.gov (United States)

Singh, Shilpi; Pathak, Praveen; Singh, Vijay A.

2011-01-01

The one-dimensional finite well is a textbook problem. We propose approximate approaches to obtain the energy levels of the well. The finite well is also encountered in semiconductor heterostructures where the carrier mass inside the well (m[subscript i]) is taken to be distinct from mass outside (m[subscript o]). A relevant parameter is the mass…

Solution-Based Processing and Applications of Two-Dimensional Heterostructures

Science.gov (United States)

Hersam, Mark

Two-dimensional materials have emerged as promising candidates for next-generation electronics and optoelectronics, but advances in scalable nanomanufacturing are required to exploit this potential in real-world technology. This talk will explore methods for improving the uniformity of solution-processed two-dimensional materials with an eye toward realizing dispersions and inks that can be deposited into large-area thin-films. In particular, density gradient ultracentrifugation allows the solution-based isolation of graphene, boron nitride, montmorillonite, and transition metal dichalcogenides (e.g., MoS2, WS2, ReS2, MoSe2, WSe2) with homogeneous thickness down to the atomically thin limit. Similarly, two-dimensional black phosphorus is isolated in organic solvents or deoxygenated aqueous surfactant solutions with the resulting phosphorene nanosheets showing field-effect transistor mobilities and on/off ratios that are comparable to micromechanically exfoliated flakes. By adding cellulosic polymer stabilizers to these dispersions, the rheological properties can be tuned by orders of magnitude, thereby enabling two-dimensional material inks that are compatible with a range of additive manufacturing methods including inkjet, gravure, screen, and 3D printing. The resulting solution-processed two-dimensional heterostructures show promise in several device applications including photodiodes, anti-ambipolar transistors, gate-tunable memristors, and heterojunction photovoltaics.

Spin diffusion in the Mn2+ ion system of II-VI diluted magnetic semiconductor heterostructures

Science.gov (United States)

Maksimov, A. A.; Yakovlev, D. R.; Debus, J.; Tartakovskii, I. I.; Waag, A.; Karczewski, G.; Wojtowicz, T.; Kossut, J.; Bayer, M.

2010-07-01

The magnetization dynamics in diluted magnetic semiconductor heterostructures based on (Zn,Mn)Se and (Cd,Mn)Te were studied optically and simulated numerically. In samples with inhomogeneous magnetic ion distribution, these dynamics are contributed by spin-lattice relaxation and spin diffusion in the Mn spin system. A spin-diffusion coefficient of 7×10-8cm2/s was evaluated for Zn0.99Mn0.01Se from comparison of experiment and theory. Calculations of the exciton giant Zeeman splitting and the magnetization dynamics in ordered alloys and digitally grown parabolic quantum wells show perfect agreement with the experimental data. In both structure types, spin diffusion contributes essentially to the magnetization dynamics.

Room-temperature mobility above 2200 cm{sup 2}/V·s of two-dimensional electron gas in a sharp-interface AlGaN/GaN heterostructure

Energy Technology Data Exchange (ETDEWEB)

Chen, Jr-Tai, E-mail: jrche@ifm.liu.se; Persson, Ingemar; Nilsson, Daniel; Hsu, Chih-Wei; Palisaitis, Justinas; Forsberg, Urban; Persson, Per O. Å.; Janzén, Erik [Department of Physics, Chemistry, and Biology, Linköping University, SE 581 83 Linköping (Sweden)

2015-06-22

A high mobility of 2250 cm{sup 2}/V·s of a two-dimensional electron gas (2DEG) in a metalorganic chemical vapor deposition-grown AlGaN/GaN heterostructure was demonstrated. The mobility enhancement was a result of better electron confinement due to a sharp AlGaN/GaN interface, as confirmed by scanning transmission electron microscopy analysis, not owing to the formation of a traditional thin AlN exclusion layer. Moreover, we found that the electron mobility in the sharp-interface heterostructures can sustain above 2000 cm{sup 2}/V·s for a wide range of 2DEG densities. Finally, it is promising that the sharp-interface AlGaN/GaN heterostructure would enable low contact resistance fabrication, less impurity-related scattering, and trapping than the AlGaN/AlN/GaN heterostructure, as the high-impurity-contained AlN is removed.

The observation of the Aharonov-Bohm effect in suspended semiconductor ring interferometers

Science.gov (United States)

Pokhabov, D. A.; Pogosov, A. G.; Shevyrin, A. A.; Zhdanov, E. Yu; Bakarov, A. K.; Shklyaev, A. A.; Ishutkin, S. V.; Stepanenko, M. V.; Shesterikov, E. V.

2018-02-01

A suspended semiconductor quantum ring interferometer based on a GaAs/AlGaAs heterostructure with a two-dimensional electron gas (2DEG) is created and experimentally studied. The electron interference in suspended 2DEG is observed. The interference manifests itself as the Aharonov-Bohm oscillations of the interferometer magnetoresistance, clearly observed before as well as after suspension. The amplitude of the oscillations remains almost unchanged after suspension.

The study of sub-surface and interface characteristics of semiconductor heterostructures by slow positron implantation spectroscopy

International Nuclear Information System (INIS)

Baker, J.A.; Coleman, P.G.

1989-01-01

Experiments are described in which the controlled implantation of mono-energetic positrons is used to gain information non-destructively on epilayer and interface defects in semiconductor heterostructures. The implantation, and hence annihilation, profile is changed by varying the incident positron energy from 1 to 35 keV. Characteristics of the positron state at the annihilation site are reflected in the width of the measure Doppler-broadened annihilation line. The fractions of positrons annihilating from each state are deduced by solving the steady-state diffusion equation. The application of the technique is illustrated by application to a series of SiO 2 -Si samples. (author)

Polarization Properties of Semiconductor Nanorod Heterostructures: From Single Particles to the Ensemble.

Science.gov (United States)

Hadar, Ido; Hitin, Gal B; Sitt, Amit; Faust, Adam; Banin, Uri

2013-02-07

Semiconductor heterostructured seeded nanorods exhibit intense polarized emission, and the degree of polarization is determined by their morphology and dimensions. Combined optical and atomic force microscopy were utilized to directly correlate the emission polarization and the orientation of single seeded nanorods. For both the CdSe/CdS sphere-in-rod (S@R) and rod-in-rod (R@R), the emission was found to be polarized along the nanorod's main axis. Statistical analysis for hundreds of single nanorods shows higher degree of polarization, p, for R@R (p = 0.83), in comparison to S@R (p = 0.75). These results are in good agreement with the values inferred by ensemble photoselection anisotropy measurements in solution, establishing its validity for nanorod samples. On this basis, photoselection photoluminescence excitation anisotropy measurements were carried out providing unique information concerning the symmetry of higher excitonic transitions and allowing for a better distinction between the dielectric and the quantum-mechanical contributions to polarization in nanorods.

Ultrasensitive near-infrared photodetectors based on graphene-MoTe2-graphene vertical van der Waals heterostructure

Science.gov (United States)

Zhang, Kun; Ye, Yu; Dai, Lun; School of Physics, Peking University Team

Two-dimensional (2D) materials have rapidly established themselves as exceptional building blocks for optoelectronic applications, due to their unique properties and atomically thin nature. Nevertheless, near-infrared (NIR) photodetectors based on layered 2D semiconductors are rarely realized. In this work, we fabricate graphene-MoTe2-graphene vertical vdWs heterostructure by a facile and reliable site controllable transfer method, and apply it for photodetection from visible to the NIR wavelength range. Compared to the 2D semiconductor based photodetectors reported thus far, the graphene-MoTe2-graphene photodetector has superior performance, including high photoresponsivity (110 mA W-1 at 1064 nm and 205 mA W-1 at 473 nm), high external quantum efficiency (EQE, 12.9% at 1064 nm and 53.8% at 473 nm), rapid response and recovery processes (rise time of 24 μs, fall time of 46 μs under 1064 nm illumination), and free from an external source-drain power supply. The all-2D-materials heterostructure has promising applications in future novel high responsivity, high speed and flexible NIR devices.

Semiconductor physics

CERN Document Server

Böer, Karl W

2018-01-01

This handbook gives a complete survey of the important topics and results in semiconductor physics. It addresses every fundamental principle and most research topics and areas of application in the field of semiconductor physics. Comprehensive information is provided on crystalline bulk and low-dimensional as well as amporphous semiconductors, including optical, transport, and dynamic properties.

Probing Carrier Transport and Structure-Property Relationship of Highly Ordered Organic Semiconductors at the Two-Dimensional Limit.

Science.gov (United States)

Zhang, Yuhan; Qiao, Jingsi; Gao, Si; Hu, Fengrui; He, Daowei; Wu, Bing; Yang, Ziyi; Xu, Bingchen; Li, Yun; Shi, Yi; Ji, Wei; Wang, Peng; Wang, Xiaoyong; Xiao, Min; Xu, Hangxun; Xu, Jian-Bin; Wang, Xinran

2016-01-08

One of the basic assumptions in organic field-effect transistors, the most fundamental device unit in organic electronics, is that charge transport occurs two dimensionally in the first few molecular layers near the dielectric interface. Although the mobility of bulk organic semiconductors has increased dramatically, direct probing of intrinsic charge transport in the two-dimensional limit has not been possible due to excessive disorders and traps in ultrathin organic thin films. Here, highly ordered single-crystalline mono- to tetralayer pentacene crystals are realized by van der Waals (vdW) epitaxy on hexagonal BN. We find that the charge transport is dominated by hopping in the first conductive layer, but transforms to bandlike in subsequent layers. Such an abrupt phase transition is attributed to strong modulation of the molecular packing by interfacial vdW interactions, as corroborated by quantitative structural characterization and density functional theory calculations. The structural modulation becomes negligible beyond the second conductive layer, leading to a mobility saturation thickness of only ∼3  nm. Highly ordered organic ultrathin films provide a platform for new physics and device structures (such as heterostructures and quantum wells) that are not possible in conventional bulk crystals.

Rocksalt nitride metal/semiconductor superlattices: A new class of artificially structured materials

Science.gov (United States)

Saha, Bivas; Shakouri, Ali; Sands, Timothy D.

2018-06-01

Artificially structured materials in the form of superlattice heterostructures enable the search for exotic new physics and novel device functionalities, and serve as tools to push the fundamentals of scientific and engineering knowledge. Semiconductor heterostructures are the most celebrated and widely studied artificially structured materials, having led to the development of quantum well lasers, quantum cascade lasers, measurements of the fractional quantum Hall effect, and numerous other scientific concepts and practical device technologies. However, combining metals with semiconductors at the atomic scale to develop metal/semiconductor superlattices and heterostructures has remained a profoundly difficult scientific and engineering challenge. Though the potential applications of metal/semiconductor heterostructures could range from energy conversion to photonic computing to high-temperature electronics, materials challenges primarily had severely limited progress in this pursuit until very recently. In this article, we detail the progress that has taken place over the last decade to overcome the materials engineering challenges to grow high quality epitaxial, nominally single crystalline metal/semiconductor superlattices based on transition metal nitrides (TMN). The epitaxial rocksalt TiN/(Al,Sc)N metamaterials are the first pseudomorphic metal/semiconductor superlattices to the best of our knowledge, and their physical properties promise a new era in superlattice physics and device engineering.

Spin and energy transfer between magnetic ions and free carriers in diluted-magnetic semiconductor heterostructures

Energy Technology Data Exchange (ETDEWEB)

Yakovlev, D.R. [Experimental Physics 2, University of Dortmund, 44227 Dortmund (Germany); Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); Kneip, M.; Bayer, M. [Experimental Physics 2, University of Dortmund, 44227 Dortmund (Germany); Maksimov, A.A.; Tartakovskii, I.I. [Institute of Solid State Physics, Russian Academy of Sciences, 142432 Chernogolovka (Russian Federation); Keller, D.; Ossau, W.; Molenkamp, L.W. [Physikalisches Institut der Universitaet Wuerzburg, 97074 Wuerzburg (Germany); Scherbakov, A.V.; Akimov, A.V. [Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); Waag, A. [Abteilung Halbleiterphysik, Universitaet Ulm, 89081 Ulm (Germany)

2004-03-01

In this paper we give a brief overview of our studies on dynamical processes in diluted-magnetic-semiconductor heterostructures based on (Zn,Mn)Se and (Cd,Mn)Te. Presence of free carriers is an important factor which determines the energy- and spin transfer in a coupled systems of magnetic ions, lattice (the phonon system) and carriers. We report also new data on dynamical response of magnetic ions interacting with photogenerated electron-hole plasma. (Zn,Mn)Se/(Zn,Be)Se structures with relatively high Mn content of 11% provide spin-lattice relaxation time of about 20 ns, which is considerably shorter then the characteristic times of nonequilibrium phonons ranging to 1 {mu}s. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Inkjet printed ambipolar transistors and inverters based on carbon nanotube/zinc tin oxide heterostructures

International Nuclear Information System (INIS)

Kim, Bongjun; Jang, Seonpil; Dodabalapur, Ananth; Geier, Michael L.; Prabhumirashi, Pradyumna L.; Hersam, Mark C.

2014-01-01

We report ambipolar field-effect transistors (FETs) consisting of inkjet printed semiconductor bilayer heterostructures utilizing semiconducting single-walled carbon nanotubes (SWCNTs) and amorphous zinc tin oxide (ZTO). The bilayer structure allows for electron transport to occur principally in the amorphous oxide layer and hole transport to occur exclusively in the SWCNT layer. This results in balanced electron and hole mobilities exceeding 2 cm 2 V −1 s −1 at low operating voltages ( 10). This work provides a pathway for realizing solution processable, inkjet printable, large area electronic devices, and systems based on SWCNT-amorphous oxide heterostructures

Influence of phonons on semiconductor quantum emission

Energy Technology Data Exchange (ETDEWEB)

Feldtmann, Thomas

2009-07-06

A microscopic theory of interacting charge carriers, lattice vibrations, and light modes in semiconductor systems is presented. The theory is applied to study quantum dots and phonon-assisted luminescence in bulk semiconductors and heterostructures. (orig.)

Axial Ge/Si nanowire heterostructure tunnel FETs

Energy Technology Data Exchange (ETDEWEB)

Picraux, Sanuel T [Los Alamos National Laboratory; Daych, Shadi A [Los Alamos National Laboratory

2010-01-01

The vapor-liquid-solid (VLS) growth of semiconductor nanowires allows doping and composition modulation along their axis and the realization of axial 1 D heterostructures. This provides additional flexibility in energy band-edge engineering along the transport direction which is difficult to attain by planar materials growth and processing techniques. We report here on the design, growth, fabrication, and characterization of asymmetric heterostructure tunnel field-effect transistors (HTFETs) based on 100% compositionally modulated Si/Ge axial NWs for high on-current operation and low ambipolar transport behavior. We discuss the optimization of band-offsets and Schottky barrier heights for high performance HTFETs and issues surrounding their experimental realization. Our HTFET devices with 10 nm PECVD SiN{sub x} gate dielectric resulted in a measured current drive exceeding 100 {mu}A/{mu}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios.

Heterostructures of transition metal dichalcogenides

KAUST Repository

Amin, Bin

2015-08-24

The structural, electronic, optical, and photocatalytic properties of out-of-plane and in-plane heterostructures of transition metal dichalcogenides are investigated by (hybrid) first principles calculations. The out-of-plane heterostructures are found to be indirect band gap semiconductors with type-II band alignment. Direct band gaps can be achieved by moderate tensile strain in specific cases. The excitonic peaks show blueshifts as compared to the parent monolayer systems, whereas redshifts occur when the chalcogen atoms are exchanged along the series S-Se-Te. Strong absorption from infrared to visible light as well as excellent photocatalytic properties can be achieved.

Terahertz response of two-dimensional charge carrier systems in GaAs-based heterostructures; Terahertz-Antwort von zweidimensionalen Ladungstraegersystemen in GaAs-basierten Heterostrukturen

Energy Technology Data Exchange (ETDEWEB)

Grunwald, Torben

2009-12-17

This thesis deals with the THz response of two-dimensional charge carrier systems in different semiconductor heterostructures under varying conditions. The utilized spectrometer is suitable for time-resolved optical pump - THz probe experiments, as well as for optical pump-probe experiments in the near infrared for identical conditions. It allows the investigation of the transverse dielectric function of both, a (GaIn)As/GaAs quantum well and a two-dimensional electron gas in a GaAs-based heterostructure. First, the THz response of an electron-hole plasma is examined for different carrier densities. The plasma is generated by interband transitions in a (GaIn)As/GaAs quantum well. The measured transverse dielectric function reveals that the plasma behaves in accordance with the classical Drude oscillator model. It also conforms to the microscopic theory of the THz response of corresponding many-body systems. Evidence of a plasma resonance in the negative imaginary part of the inverse dielectric function is found. The squared peak frequency of the resonance is proportional to the carrier density of the plasma. This behavior corresponds to the plasma frequency of a three-dimensional plasma. Overall, it can be shown that the transverse THz response of a two-dimensional electron-hole plasma behaves like the response of a three-dimensional plasma. Therefore, the transversal THz response of an electron-hole plasma seems to be independent of the dimension of the charge carrier system. Secondly, the behavior of the quantum well for a 1s-exciton dominated carrier system is investigated. A good agreement between experiment and microscopic theory is obtained for the dielectric function. The negative imaginary part of the inverse dielectric function shows a resonance at the intraexcitonic 1s-2p transition frequency, even in weakly excited excitonic systems. Increasing the carrier density leads to a plasma-like behavior of the system. However, in these densities a significant

Current transport in graphene/AlGaN/GaN vertical heterostructures probed at nanoscale.

Science.gov (United States)

Fisichella, Gabriele; Greco, Giuseppe; Roccaforte, Fabrizio; Giannazzo, Filippo

2014-08-07

Vertical heterostructures combining two or more graphene (Gr) layers separated by ultra-thin insulating or semiconductor barriers represent very promising systems for next generation electronics devices, due to the combination of high speed operation with wide-range current modulation by a gate bias. They are based on the specific mechanisms of current transport between two-dimensional-electron-gases (2DEGs) in close proximity. In this context, vertical devices formed by Gr and semiconductor heterostructures hosting an "ordinary" 2DEG can be also very interesting. In this work, we investigated the vertical current transport in Gr/Al(0.25)Ga(0.75)N/GaN heterostructures, where Gr is separated from a high density 2DEG by a ∼ 24 nm thick AlGaN barrier layer. The current transport from Gr to the buried 2DEG was characterized at nanoscale using conductive atomic force microscopy (CAFM) and scanning capacitance microscopy (SCM). From these analyses, performed both on Gr/AlGaN/GaN and on AlGaN/GaN reference samples using AFM tips with different metal coatings, the Gr/AlGaN Schottky barrier height ΦB and its lateral uniformity were evaluated, as well as the variation of the carrier densities of graphene (ngr) and AlGaN/GaN 2DEG (ns) as a function of the applied bias. A low Schottky barrier (∼ 0.40 eV) with excellent spatial uniformity was found at the Gr/AlGaN interface, i.e., lower compared to the measured values for metal/AlGaN contacts, which range from ∼ 0.6 to ∼ 1.1 eV depending on the metal workfunction. The electrical behavior of the Gr/AlGaN contact has been explained by Gr interaction with AlGaN donor-like surface states located in close proximity, which are also responsible of high n-type Gr doping (∼ 1.3 × 10(13) cm(-2)). An effective modulation of ns by the Gr Schottky contact was demonstrated by capacitance analysis under reverse bias. From this basic understanding of transport properties in Gr/AlGaN/GaN heterostructures, novel vertical field effect

The Non-Equilibrium Statistical Distribution Function for Electrons and Holes in Semiconductor Heterostructures in Steady-State Conditions

Directory of Open Access Journals (Sweden)

Krzysztof Jόzwikowska

2015-06-01

Full Text Available The main goal of this work is to determine a statistical non-equilibrium distribution function for the electron and holes in semiconductor heterostructures in steady-state conditions. Based on the postulates of local equilibrium, as well as on the integral form of the weighted Gyarmati’s variational principle in the force representation, using an alternative method, we have derived general expressions, which have the form of the Fermi–Dirac distribution function with four additional components. The physical interpretation of these components has been carried out in this paper. Some numerical results of a non-equilibrium distribution function for an electron in HgCdTe structures are also presented.

Charge transfer in rectifying oxide heterostructures and oxide access elements in ReRAM

Energy Technology Data Exchange (ETDEWEB)

Stefanovich, G. B.; Pergament, A. L.; Boriskov, P. P.; Kuroptev, V. A., E-mail: v.a.kuroptev@gmail.com; Stefanovich, T. G. [Petrozavodsk State University (Russian Federation)

2016-05-15

The main aspects of the synthesis and experimental research of oxide diode heterostructures are discussed with respect to their use as selector diodes, i.e., access elements in oxide resistive memory. It is shown that charge transfer in these materials differs significantly from the conduction mechanism in p–n junctions based on conventional semiconductors (Si, Ge, A{sup III}–B{sup V}), and the model should take into account the electronic properties of oxides, primarily the low carrier drift mobility. It is found that an increase in the forward current requires an oxide with a small band gap (<1.3 eV) in the heterostructure composition. Heterostructures with Zn, In–Zn (IZO), Ti, Ni, and Cu oxides are studied; it is found that the CuO–IZO heterojunction has the highest forward current density (10{sup 4} A/cm{sup 2}).

Lateral topological crystalline insulator heterostructure

Science.gov (United States)

Sun, Qilong; Dai, Ying; Niu, Chengwang; Ma, Yandong; Wei, Wei; Yu, Lin; Huang, Baibiao

2017-06-01

The emergence of lateral heterostructures fabricated by two-dimensional building blocks brings many exciting realms in material science and device physics. Enriching available nanomaterials for creating such heterostructures and enabling the underlying new physics is highly coveted for the integration of next-generation devices. Here, we report a breakthrough in lateral heterostructure based on the monolayer square transition-metal dichalcogenides MX2 (M  =  W, X  =  S/Se) modules. Our results reveal that the MX2 lateral heterostructure (1S-MX2 LHS) can possess excellent thermal and dynamical stability. Remarkably, the highly desired two-dimensional topological crystalline insulator phase is confirmed by the calculated mirror Chern number {{n}\\text{M}}=-1 . A nontrivial band gap of 65 meV is obtained with SOC, indicating the potential for room-temperature observation and applications. The topologically protected edge states emerge at the edges of two different nanoribbons between the bulk band gap, which is consistent with the mirror Chern number. In addition, a strain-induced topological phase transition in 1S-MX2 LHS is also revealed, endowing the potential utilities in electronics and spintronics. Our predictions not only introduce new member and vitality into the studies of lateral heterostructures, but also highlight the promise of lateral heterostructure as appealing topological crystalline insulator platforms with excellent stability for future devices.

Feigenbaum scenario in the dynamics of a metal-oxide semiconductor heterostructure under harmonic perturbation. Golden mean criticality

International Nuclear Information System (INIS)

Cristescu, C.P.; Mereu, B.; Stan, Cristina; Agop, M.

2009-01-01

Experimental investigations and theoretical analysis on the dynamics of a metal-oxide semiconductor heterostructure used as nonlinear capacity in a series RLC electric circuit are presented. A harmonic voltage perturbation can induce various nonlinear behaviours, particularly evolution to chaos by period doubling and torus destabilization. In this work we focus on the change in dynamics induced by a sinusoidal driving with constant frequency and variable amplitude. Theoretical treatment based on the microscopic mechanisms involved led us to a dynamic system with a piecewise behaviour. Consequently, a model consisting of a nonlinear oscillator described by a piecewise second order ordinary differential equation is proposed. This kind of treatment is required by the asymmetry in the behaviour of the metal-oxide semiconductor with respect to the polarization of the perturbing voltage. The dynamics of the theoretical model is in good agreement with the experimental results. A connection with El Naschie's E-infinity space-time is established based on the interpretation of our experimental results as evidence of the importance of the golden mean criticality in the microscopic world.

Semiconductor spintronics

International Nuclear Information System (INIS)

Fabian, J.; Abiague, A.M.; Ertler, Ch.; Stano, P.; Zutic, I.

2007-01-01

Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin of magnetism. While metal spintronics has already found its niche in the computer industry - giant magnetoresistance systems are used as hard disk read heads - semiconductor spintronics is vet demonstrate its full potential. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin transport, spin injection. Silsbee-Johnson spin-charge coupling, and spin-dependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent interaction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In view of the importance of ferromagnetic semiconductor material, a brief discussion of diluted magnetic semiconductors is included. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief

Organic p-n heterostructures and superlattices

Energy Technology Data Exchange (ETDEWEB)

Kowarik, Stefan [Lawrence Berkeley National Laboratory, Berkeley, CA (United States); Hinderhofer, Alexander; Gerlach, Alexander; Schreiber, Frank [Institut fuer Angewandte Physik, Tuebingen (Germany); Osso, Oriol [MATGAS 2000 A.I.E., Esfera UAB, Barcelona (Spain); Wang, Cheng; Hexemer, Alexander [Advanced Light Source, Berkeley, CA (United States)

2009-07-01

For many applications of organic semiconductors two components such as e.g. n and p-type layers are required, and the morphology of such heterostructures is crucial for their performance. Pentacene (PEN) is one of the most promising p-type molecular semiconductors and recently perfluoro-pentacene (PFP) has been identified as a good electron conducting material for complementary circuits with PEN. We use soft and hard X-ray reflectivity measurements, scanning transmission X-ray microscopy (STXM) and atomic force microscopy for structural investigations of PFP-PEN heterostructures. The chemical contrast between PEN and PFP in STXM allows us to determine the lateral length scales of p and n domains in a bilayer. For a superlattice of alternating PFP and PEN layers grown by organic molecular beam deposition, X-ray reflectivity measurements demonstrate good structural order. We find a superlattice reflection that varies strongly when tuning the X-ray energy around the fluorine edge, demonstrating that there are indeed alternating PFP and PEN layers.

Selection of modes in transverse-mode waveguides for semiconductor lasers based on asymmetric heterostructures

International Nuclear Information System (INIS)

Slipchenko, S. O.; Bondarev, A. D.; Vinokurov, D. A.; Nikolaev, D. N.; Fetisova, N. V.; Sokolova, Z. N.; Pikhtin, N. A.; Tarasov, I. S.

2009-01-01

Asymmetric Al 0.3 Ga 0.7 As/GaAs/InGaAs heterostructures with a broadened waveguide produced by the method of MOCVD epitaxy are studied. It is established that the precision shift of the active region to one of the cladding layers ensures the generation of the chosen mode of high order in the transverse broadened waveguide. It is experimentally established that this shift brings about an increase in internal optical losses and a decrease in the internal quantum efficiency of stimulated emission. It is shown experimentally that the shift of the active region to the n-type cladding layer governs the sublinear form of the power-current characteristic for semiconductor lasers; in the case of a shift of the active region towards the p-type cladding layer, the laser diodes demonstrated a linear dependence of optical power on the pump current in the entire range of pump currents.

International Conference on the Physics of Semiconductors (17th) Held in San Francisco, California on August 6-10, 1984

Science.gov (United States)

1984-09-30

Levels of Two-Dimensional Holes in GaAs - (A[Ga)As Quantum Well Heterostructures 219 11:00 M. A. Chin , V. Narayanamurti, H. L. Stormer, A. C. Gossard...W. Chye , P. Skeath, C. Y. Su and I. Lindau, J. Vac. Sci. Technol. 16, 1422 (1979). 121 17th International Conference on the Physics of Semiconductors...DIMENSIONAL HOLE GAS M. A. Chin , V. Narayanamurti, H. L. Stormer and A. C. Gossard AT&T Bell Laboratories, Murray Hill, NJ 07974 The enhanced electron

Emergent properties resulting from type-II band alignment in semiconductor nanoheterostructures.

Science.gov (United States)

Lo, Shun S; Mirkovic, Tihana; Chuang, Chi-Hung; Burda, Clemens; Scholes, Gregory D

2011-01-11

The development of elegant synthetic methodologies for the preparation of monocomponent nanocrystalline particles has opened many possibilities for the preparation of heterostructured semiconductor nanostructures. Each of the integrated nanodomains is characterized by its individual physical properties, surface chemistry, and morphology, yet, these multicomponent hybrid particles present ideal systems for the investigation of the synergetic properties that arise from the material combination in a non-additive fashion. Of particular interest are type-II heterostructures, where the relative band alignment of their constituent semiconductor materials promotes a spatial separation of the electron and hole following photoexcitation, a highly desirable property for photovoltaic applications. This article highlights recent progress in both synthetic strategies, which allow for material and architectural modulation of novel nanoheterostructures, as well as the experimental work that provides insight into the photophysical properties of type-II heterostructures. The effects of external factors, such as electric fields, temperature, and solvent are explored in conjunction with exciton and multiexciton dynamics and charge transfer processes typical for type-II semiconductor heterostructures.

Defects in semiconductors

International Nuclear Information System (INIS)

Pimentel, C.A.F.

1983-01-01

Some problems openned in the study of defects in semiconductors are presented. In particular, a review is made of the more important problems in Si monocrystals of basic and technological interest: microdefects and the presence of oxigen and carbon. The techniques usually utilized in the semiconductor material characterization are emphatized according its potentialities. Some applications of x-ray techniques in the epitaxial shell characterization in heterostructures, importants in electronic optics, are shown. The increase in the efficiency of these defect analysis methods in semiconductor materials with the use of synchrotron x-ray sources is shown. (L.C.) [pt

Progress in Group III nitride semiconductor electronic devices

International Nuclear Information System (INIS)

Hao Yue; Zhang Jinfeng; Shen Bo; Liu Xinyu

2012-01-01

Recently there has been a rapid domestic development in group III nitride semiconductor electronic materials and devices. This paper reviews the important progress in GaN-based wide bandgap microelectronic materials and devices in the Key Program of the National Natural Science Foundation of China, which focuses on the research of the fundamental physical mechanisms of group III nitride semiconductor electronic materials and devices with the aim to enhance the crystal quality and electric performance of GaN-based electronic materials, develop new GaN heterostructures, and eventually achieve high performance GaN microwave power devices. Some remarkable progresses achieved in the program will be introduced, including those in GaN high electron mobility transistors (HEMTs) and metal—oxide—semiconductor high electron mobility transistors (MOSHEMTs) with novel high-k gate insulators, and material growth, defect analysis and material properties of InAlN/GaN heterostructures and HEMT fabrication, and quantum transport and spintronic properties of GaN-based heterostructures, and high-electric-field electron transport properties of GaN material and GaN Gunn devices used in terahertz sources. (invited papers)

Efficient Ab-Initio Electron Transport Calculations for Heterostructures by the Nonequilibrium Green’s Function Method

Directory of Open Access Journals (Sweden)

Hirokazu Takaki

2014-01-01

Full Text Available We present an efficient computation technique for ab-initio electron transport calculations based on density functional theory and the nonequilibrium Green’s function formalism for application to heterostructures with two-dimensional (2D interfaces. The computational load for constructing the Green’s functions, which depends not only on the energy but also on the 2D Bloch wave vector along the interfaces and is thus catastrophically heavy, is circumvented by parallel computational techniques with the message passing interface, which divides the calculations of the Green’s functions with respect to energy and wave vectors. To demonstrate the computational efficiency of the present code, we perform ab-initio electron transport calculations of Al(100-Si(100-Al(100 heterostructures, one of the most typical metal-semiconductor-metal systems, and show their transmission spectra, density of states (DOSs, and dependence on the thickness of the Si layers.

Two-Dimensional Charge Transport in Disordered Organic Semiconductors

NARCIS (Netherlands)

Brondijk, J. J.; Roelofs, W. S. C.; Mathijssen, S. G. J.; Shehu, A.; Cramer, T.; Biscarini, F.; Blom, P. W. M.; de Leeuw, D. M.

2012-01-01

We analyze the effect of carrier confinement on the charge-transport properties of organic field-effect transistors. Confinement is achieved experimentally by the use of semiconductors of which the active layer is only one molecule thick. The two-dimensional confinement of charge carriers provides

Topological excitations in semiconductor heterostructures

International Nuclear Information System (INIS)

Koushik, R.; Mukerjee, Subroto; Ghosh, Arindam; Baenninger, Matthias; Narayan, Vijay; Pepper, Michael; Farrer, Ian; Ritchie, David A.

2013-01-01

Topological defects play an important role in the melting phenomena in two-dimensions. In this work, we report experimental observation of topological defect induced melting in two-dimensional electron systems (2DES) in the presence of strong Coulomb interaction and disorder. The phenomenon is characterised by measurement of conductivity which goes to zero in a Berezinskii-Kosterlitz-Thouless like transition. Further evidence is provided via low-frequency conductivity noise measurements

Optical Two-Dimensional Spectroscopy of Disordered Semiconductor Quantum Wells and Quantum Dots

Energy Technology Data Exchange (ETDEWEB)

Cundiff, Steven T. [Univ. of Colorado, Boulder, CO (United States)

2016-05-03

This final report describes the activities undertaken under grant "Optical Two-Dimensional Spectroscopy of Disordered Semiconductor Quantum Wells and Quantum Dots". The goal of this program was to implement optical 2-dimensional Fourier transform spectroscopy and apply it to electronic excitations, including excitons, in semiconductors. Specifically of interest are quantum wells that exhibit disorder due to well width fluctuations and quantum dots. In both cases, 2-D spectroscopy will provide information regarding coupling among excitonic localization sites.

A microprocessor based on a two-dimensional semiconductor

Science.gov (United States)

Wachter, Stefan; Polyushkin, Dmitry K.; Bethge, Ole; Mueller, Thomas

2017-04-01

The advent of microcomputers in the 1970s has dramatically changed our society. Since then, microprocessors have been made almost exclusively from silicon, but the ever-increasing demand for higher integration density and speed, lower power consumption and better integrability with everyday goods has prompted the search for alternatives. Germanium and III-V compound semiconductors are being considered promising candidates for future high-performance processor generations and chips based on thin-film plastic technology or carbon nanotubes could allow for embedding electronic intelligence into arbitrary objects for the Internet-of-Things. Here, we present a 1-bit implementation of a microprocessor using a two-dimensional semiconductor--molybdenum disulfide. The device can execute user-defined programs stored in an external memory, perform logical operations and communicate with its periphery. Our 1-bit design is readily scalable to multi-bit data. The device consists of 115 transistors and constitutes the most complex circuitry so far made from a two-dimensional material.

Design and realization of one-dimensional double hetero-structure photonic crystals for infrared-radar stealth-compatible materials applications

International Nuclear Information System (INIS)

Wang, Zhixun; Cheng, Yongzhi; Nie, Yan; Wang, Xian; Gong, Rongzhou

2014-01-01

In this paper, a new type one-dimensional (1D) double hetero-structure composite photonic crystal (CPC) for infrared-radar stealth-compatible materials applications was proposed and studied numerically and experimentally. First, based on transfer matrix method of thin-film optical theory, the propagation characteristics of the proposed structure comprising a stack of different alternating micrometer-thick layers of germanium and zinc sulfide were investigated numerically. Calculation results exhibit that this 1D single hetero-structure PC could achieve a flat high reflectivity gradually with increasing the number of the alternating media layers in a single broadband range. Then, based on principles of distributed Bragg reflector micro-cavity, a 1D double hetero-structure CPC comprising four PCs with thickness of 0.797 μm, 0.592 μm, 1.480 μm, and 2.114 μm, respectively, was proposed. Calculation results exhibit that this CPC could achieve a high reflectance of greater than 0.99 in the wavelength ranges of 3–5 μm and 8–14 μm and agreed well with experiment. Further experiments exhibit that the infrared emissivity of the proposed CPC is as low as 0.073 and 0.042 in the wavelength ranges of 3–5 μm and 8–12 μm, respectively. In addition, the proposed CPC can be used to construct infrared-radar stealth-compatible materials due to its high transmittance in radar wave band

Design and realization of one-dimensional double hetero-structure photonic crystals for infrared-radar stealth-compatible materials applications

Energy Technology Data Exchange (ETDEWEB)

Wang, Zhixun; Cheng, Yongzhi, E-mail: cyz0715@126.com; Nie, Yan; Wang, Xian; Gong, Rongzhou, E-mail: rzhgong@mail.hust.edu.cn [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China)

2014-08-07

In this paper, a new type one-dimensional (1D) double hetero-structure composite photonic crystal (CPC) for infrared-radar stealth-compatible materials applications was proposed and studied numerically and experimentally. First, based on transfer matrix method of thin-film optical theory, the propagation characteristics of the proposed structure comprising a stack of different alternating micrometer-thick layers of germanium and zinc sulfide were investigated numerically. Calculation results exhibit that this 1D single hetero-structure PC could achieve a flat high reflectivity gradually with increasing the number of the alternating media layers in a single broadband range. Then, based on principles of distributed Bragg reflector micro-cavity, a 1D double hetero-structure CPC comprising four PCs with thickness of 0.797 μm, 0.592 μm, 1.480 μm, and 2.114 μm, respectively, was proposed. Calculation results exhibit that this CPC could achieve a high reflectance of greater than 0.99 in the wavelength ranges of 3–5 μm and 8–14 μm and agreed well with experiment. Further experiments exhibit that the infrared emissivity of the proposed CPC is as low as 0.073 and 0.042 in the wavelength ranges of 3–5 μm and 8–12 μm, respectively. In addition, the proposed CPC can be used to construct infrared-radar stealth-compatible materials due to its high transmittance in radar wave band.

Layer-dependent electronic properties of phosphorene-like materials and phosphorene-based van der Waals heterostructures.

Science.gov (United States)

Huang, Y C; Chen, X; Wang, C; Peng, L; Qian, Q; Wang, S F

2017-06-29

Black phosphorus is a layered semiconducting allotrope of phosphorus with high carrier mobility. Its monolayer form, phosphorene, is an extremely fashionable two-dimensional material which has promising potential in transistors, optoelectronics and electronics. However, phosphorene-like analogues, especially phosphorene-based heterostructures and their layer-controlled electronic properties, are rarely systematically investigated. In this paper, the layer-dependent structural and electronic properties of phosphorene-like materials, i.e., mono- and few-layer MXs (M = Sn, Ge; X = S, Se), are first studied via first-principles calculations, and then the band edge position of these MXs as well as mono- and few-layer phosphorene are aligned. It is revealed that van der Waals heterostructures with a Moiré superstructure formed by mutual coupling among MXs and among MXs and few-layer phosphorene are able to show type-I or type-II characteristics and a I-II or II-I transition can be induced by adjusting the number of layers. Our work is expected to yield a new family of phosphorene-based semiconductor heterostructures with tunable electronic properties through altering the number of layers of the composite.

Regulation of depletion layer width in Pb(Zr,Ti)O3/Nb:SrTiO3 heterostructures

Science.gov (United States)

Bai, Yu; Jie Wang, Zhan; Cui, Jian Zhong; Zhang, Zhi Dong

2018-05-01

Improving the tunability of depletion layer width (DLW) in ferroelectric/semiconductor heterostructures is important for the performance of some devices. In this work, 200-nm-thick Pb(Zr0.4Ti0.6)O3 (PZT) films were deposited on different Nb-doped SrTiO3 (NSTO) substrates, and the tunability of DLW at PZT/NSTO interfaces were studied. Our results showed that the maximum tunability of the DLW was achieved at the NSTO substrate with 0.5 wt% Nb. On the basis of the modified capacitance model and the ferroelectric semiconductor theory, we suggest that the tunability of the DLW in PZT/NSTO heterostructures can be attributed to a delicate balance of the depletion layer charge and the ferroelectric polarization charge. Therefore, the performance of some devices related to the tunability of DLW in ferroelectric/semiconductor heterostructures can be improved by modulating the doping concentration in semiconducting electrode materials.

Thermal response in van der Waals heterostructures

KAUST Repository

Gandi, Appala

2016-11-21

We solve numerically the Boltzmann transport equations of the phonons and electrons to understand the thermoelectric response in heterostructures of M2CO2 (M: Ti, Zr, Hf) MXenes with transition metal dichalcogenide monolayers. Low frequency optical phonons are found to occur as a consequence of the van der Waals bonding, contribute significantly to the thermal transport, and compensate for the reduced contributions of the acoustic phonons (increased scattering cross-sections in heterostructures), such that the thermal conductivities turn out to be similar to those of the bare MXenes. Our results indicate that the important superlattice design approach of thermoelectrics (to reduce the thermal conductivity) may be effective for two-dimensional van der Waals materials when used in conjunction with intercalation. © 2016 IOP Publishing Ltd.

Controllable synthesis of metal selenide heterostructures mediated by Ag2Se nanocrystals acting as catalysts

Science.gov (United States)

Zhou, Jiangcong; Huang, Feng; Xu, Ju; Wang, Yuansheng

2013-09-01

Ag2Se nanocrystals were demonstrated to be novel semiconductor mediators, or in other word catalysts, for the growth of semiconductor heterostructures in solution. This is a result of the unique feature of Ag2Se as a fast ion conductor, allowing foreign cations to dissolve and then to heterogrow the second phase. Using Ag2Se nanocrystals as catalysts, dimeric metal selenide heterostructures such as Ag2Se-CdSe and Ag2Se-ZnSe, and even multi-segment heterostructures such as Ag2Se-CdSe-ZnSe and Ag2Se-ZnSe-CdSe, were successfully synthesized. Several interesting features were found in the Ag2Se based heterogrowth. At the initial stage of heterogrowth, a layer of the second phase forms on the surface of an Ag2Se nanosphere, with a curved junction interface between the two phases. With further growth of the second phase, the Ag2Se nanosphere tends to flatten the junction surface by modifying its shape from sphere to hemisphere in order to minimize the conjunct area and thus the interfacial energy. Notably, the crystallographic relationship of the two phases in the heterostructure varies with the lattice parameters of the second phase, in order to reduce the lattice mismatch at the interface. Furthermore, a small lattice mismatch at the interface results in a straight rod-like second phase, while a large lattice mismatch would induce a tortuous product. The reported results may provide a new route for developing novel selenide semiconductor heterostructures which are potentially applicable in optoelectronic, biomedical, photovoltaic and catalytic fields.Ag2Se nanocrystals were demonstrated to be novel semiconductor mediators, or in other word catalysts, for the growth of semiconductor heterostructures in solution. This is a result of the unique feature of Ag2Se as a fast ion conductor, allowing foreign cations to dissolve and then to heterogrow the second phase. Using Ag2Se nanocrystals as catalysts, dimeric metal selenide heterostructures such as Ag2Se-CdSe and Ag2Se

Dimensional and correlation effects of charged excitons in low-dimensional semiconductors

Energy Technology Data Exchange (ETDEWEB)

Roennow, Troels F; Pedersen, Thomas G [Department of Physics and Nanotechnology, Aalborg University, Skjernvej 4A, 9220 Aalborg Oest (Denmark); Cornean, Horia D, E-mail: tfr@nanophysics.d [Department of Mathematical Sciences, Aalborg University, Frederik Bajers Vej 7G, 9220 Aalborg (Denmark)

2010-11-26

In this paper, we investigate the existence of bound trion states in fractional dimensional nanostructures, in terms of variational calculus. We start with trial states, then we refine the result with the help of the Hartree-Fock approximation and finally we use a partial basis expansion. We show that Hartree-Fock significantly underestimates the trion binding energy and that the correlation energy is comparable with the trion binding energy. Furthermore we calculate the binding energies of positive and negative trions restricted to a large subspace of functions, which we expect to span the low-lying eigenstates of the full Hamiltonian. We find that the difference between the positive and negative trion binding energies varies very little for the electron-hole mass fractions m{sub e}/m{sub h} = {sigma} in [0.8; 1.0] and that the difference between the positive and negative trion energies grows as the dimension decreases. Finally, we compare a cylindrical effective-mass model of a typical carbon nanotube, with a fractional dimensional model with D = 1.71. We find very good agreement between the trion binding energies predicted by the two models.

Dimensional and correlation effects of charged excitons in low-dimensional semiconductors

International Nuclear Information System (INIS)

Roennow, Troels F; Pedersen, Thomas G; Cornean, Horia D

2010-01-01

In this paper, we investigate the existence of bound trion states in fractional dimensional nanostructures, in terms of variational calculus. We start with trial states, then we refine the result with the help of the Hartree-Fock approximation and finally we use a partial basis expansion. We show that Hartree-Fock significantly underestimates the trion binding energy and that the correlation energy is comparable with the trion binding energy. Furthermore we calculate the binding energies of positive and negative trions restricted to a large subspace of functions, which we expect to span the low-lying eigenstates of the full Hamiltonian. We find that the difference between the positive and negative trion binding energies varies very little for the electron-hole mass fractions m e /m h = σ in [0.8; 1.0] and that the difference between the positive and negative trion energies grows as the dimension decreases. Finally, we compare a cylindrical effective-mass model of a typical carbon nanotube, with a fractional dimensional model with D = 1.71. We find very good agreement between the trion binding energies predicted by the two models.

Electronic structure of defects in semiconductor heterojunctions

International Nuclear Information System (INIS)

Haussy, Bernard; Ganghoffer, Jean Francois

2002-01-01

Full text.heterojunctions and semiconductors and superlattices are well known and well used by people interested in optoelectronics communications. Components based on the use of heterojunctions are interesting for confinement of light and increase of quantum efficiency. An heterojunction is the contact zone between two different semiconductors, for example GaAs and Ga 1-x Al x As. Superlattices are a succession of heterojunctions (up to 10 or 20). These systems have been the subjects of many experiments ao analyse the contact between semiconductors. They also have been theoretically studied by different types of approach. The main result of those studies is the prediciton of band discontinuities. Defects in heterojunctions are real traps for charge carriers; they can affect the efficiency of the component decreasing the currents and the fluxes in it. the knowledge of their electronic structure is important, a great density of defects deeply modifies the electronic structure of the whole material creating real new bands of energy in the band structure of the component. in the first part of this work, we will describe the heterostructure and the defect in terms of quantum wells and discrete levels. This approach allows us to show the role of the width of the quantum well describing the structure but induces specific behaviours due to the one dimensional modelling. Then a perturbative treatment is proposed using the Green's functions formalism. We build atomic chains with different types of atoms featuring the heterostructure and the defect. Densities of states of a structure with a defect and levels associated to the defect are obtained. Results are comparable with the free electrons work, but the modelling do not induce problems due to a one dimensional approach. To extend our modelling, a three dimensions approach, based on a cavity model, is investigated. The influence of the defect, - of hydrogenoid type - introduced in the structure, is described by a cavity

Novel aspects of diluted and digital magnetic heterostructures

International Nuclear Information System (INIS)

Bonanni, A.

1999-04-01

In the present work novel aspects of diluted and digital II-VI-based heterostructures containing Mn ions are investigated. All the structures under study were fabricated by means of molecular beam epitaxy. Digital magnetic heterostructures have been prepared by incorporating discrete (sub)monolayers of the purely magnetic semiconductor MnTe into otherwise non magnetic CdTe quantum wells embedded in CdMgTe barriers. Formation and binding energy of magnetic polarons have been investigated in these structures and compared with the diluted case. Reflectance difference spectroscopy (RDS) performed ex-situ allowed to distinguish between signals due to the crystal anisotropy solely and those induced by the presence a magnetic elements. The problem of p-type doping of bulk diluted magnetic semiconductors II-VI-based is tackled. During and upon growth of ZnMnTe highly doped with N, in-situ RDS was carried out in order to investigate intra-ion transitions within the half filled 3d shell of Mn. Transport measurements and magnetometry at low temperature were performed to study, on the tracks of recent theoretical works, the influence of free carriers on the interaction between magnetic ions. As expected, indications of ferromagnetic ordering were found for the DMS with the highest concentration of carriers. Special attention was given to the formation of Mn islands on a II-VI substrate and to their change in morphology upon overgrowth with a mismatched material. A rich zoology of regularly shaped nanostructures could be produced. (author)

Diffusion-controlled growth of molecular heterostructures: fabrication of two-, one-, and zero-dimensional C(60) nanostructures on pentacene substrates.

Science.gov (United States)

Breuer, Tobias; Witte, Gregor

2013-10-09

A variety of low dimensional C60 structures has been grown on supporting pentacene multilayers. By choice of substrate temperature during growth the effective diffusion length of evaporated fullerenes and their nucleation at terraces or step edges can be precisely controlled. AFM and SEM measurements show that this enables the fabrication of either 2D adlayers or solely 1D chains decorating substrate steps, while at elevated growth temperature continuous wetting of step edges is prohibited and instead the formation of separated C60 clusters pinned at the pentacene step edges occurs. Remarkably, all structures remain thermally stable at room temperature once they are formed. In addition the various fullerene structures have been overgrown by an additional pentacene capping layer. Utilizing the different probe depth of XRD and NEXAFS, we found that no contiguous pentacene film is formed on the 2D C60 structure, whereas an encapsulation of the 1D and 0D structures with uniformly upright oriented pentacene is achieved, hence allowing the fabrication of low dimensional buried organic heterostructures.

Noble-metal-free NiO@Ni-ZnO/reduced graphene oxide/CdS heterostructure for efficient photocatalytic hydrogen generation

Science.gov (United States)

Chen, Fayun; Zhang, Laijun; Wang, Xuewen; Zhang, Rongbin

2017-11-01

Noble-metal-free semiconductor materials are widely used for photocatalytic hydrogen generation because of their low cost. ZnO-based heterostructures with synergistic effects exhibit an effective photocatalytic activity. In this work, NiO@Ni-ZnO/reduced graphene oxide (rGO)/CdS heterostructures are synthesized by a multi-step method. rGO nanosheets and CdS nanoparticles were introduced into the heterostructures via a redox reaction and light-assisted growth, respectively. A novel Ni-induced electrochemical growth method was developed to prepare ZnO rods from Zn powder. NiO@Ni-ZnO/rGO/CdS heterostructures with a wide visible-light absorption range exhibited highly photocatalytic hydrogen generation rates under UV-vis and visible light irradiation. The enhanced photocatalytic activity is attributed to the Ni nanoparticles that act as cocatalysts for capturing photoexcited electrons and the improved synergistic effect between ZnO and CdS due to the rGO nanosheets acting as photoexcited carrier transport channels.

Influence of Au Nanoparticle Shape on Au@Cu2O Heterostructures

OpenAIRE

Zhu, Jie; Lu, Na; Chen, Wei; Kong, Lina; Yang, Yun; Ma, Dekun; Huang, Shaoming

2015-01-01

Synthesis of metal-semiconductor heterostructures may allow the combination of function of the corresponding components and/or the enhanced performance resulting from the interactions between all the components. In this paper, Au@Cu2O core-shell heterostructures are prepared by a seed-growth method, using different-shaped Au nanocrystals as the seeds such as nanorods, octahedra, decahedra, dots, and nanocubes. The results revealed that the final structure of Au@Cu2O was greatly influenced by ...

Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged, and free excitons

Science.gov (United States)

Tongay, Sefaattin; Suh, Joonki; Ataca, Can; Fan, Wen; Luce, Alexander; Kang, Jeong Seuk; Liu, Jonathan; Ko, Changhyun; Raghunathanan, Rajamani; Zhou, Jian; Ogletree, Frank; Li, Jingbo; Grossman, Jeffrey C.; Wu, Junqiao

2013-01-01

Point defects in semiconductors can trap free charge carriers and localize excitons. The interaction between these defects and charge carriers becomes stronger at reduced dimensionalities, and is expected to greatly influence physical properties of the hosting material. We investigated effects of anion vacancies in monolayer transition metal dichalcogenides as two-dimensional (2D) semiconductors where the vacancies density is controlled by α-particle irradiation or thermal-annealing. We found a new, sub-bandgap emission peak as well as increase in overall photoluminescence intensity as a result of the vacancy generation. Interestingly, these effects are absent when measured in vacuum. We conclude that in opposite to conventional wisdom, optical quality at room temperature cannot be used as criteria to assess crystal quality of the 2D semiconductors. Our results not only shed light on defect and exciton physics of 2D semiconductors, but also offer a new route toward tailoring optical properties of 2D semiconductors by defect engineering. PMID:24029823

Two-dimensional electron gases in MgZnO/ZnO and ZnO/MgZnO/ZnO heterostructures grown by dual ion beam sputtering

Science.gov (United States)

Singh, Rohit; Arif Khan, Md; Sharma, Pankaj; Than Htay, Myo; Kranti, Abhinav; Mukherjee, Shaibal

2018-04-01

This work reports on the formation of high-density (~1013-1014 cm-2) two-dimensional electron gas (2DEG) in ZnO-based heterostructures, grown by a dual ion beam sputtering system. We probe 2DEG in bilayer MgZnO/ZnO and capped ZnO/MgZnO/ZnO heterostructures utilizing MgZnO barrier layers with varying thickness and Mg content. The effect of the ZnO cap layer thickness on the ZnO/MgZnO/ZnO heterostructure is also studied. Hall measurements demonstrate that the addition of a 5 nm ZnO cap layer results in an enhancement of the 2DEG density by about 1.5 times compared to 1.11 × 1014 cm-2 for the uncapped bilayer heterostructure with the same 30 nm barrier thickness and 30 at.% Mg composition in the barrier layer. From the low-temperature Hall measurement, the sheet carrier concentration and mobility are both found to be independent of the temperature. The capacitance-voltage measurement suggests a carrier density of ~1020 cm-3, confined in 2DEG at the MgZnO/ZnO heterointerface. The results presented are significant for the optimization of 2DEG for the eventual realization of cost-effective and large-area MgZnO/ZnO-based high-electron-mobility transistors.

Vibrational Properties of h-BN and h-BN-Graphene Heterostructures Probed by Inelastic Electron Tunneling Spectroscopy.

Science.gov (United States)

Jung, Suyong; Park, Minkyu; Park, Jaesung; Jeong, Tae-Young; Kim, Ho-Jong; Watanabe, Kenji; Taniguchi, Takashi; Ha, Dong Han; Hwang, Chanyong; Kim, Yong-Sung

2015-11-13

Inelastic electron tunneling spectroscopy is a powerful technique for investigating lattice dynamics of nanoscale systems including graphene and small molecules, but establishing a stable tunnel junction is considered as a major hurdle in expanding the scope of tunneling experiments. Hexagonal boron nitride is a pivotal component in two-dimensional Van der Waals heterostructures as a high-quality insulating material due to its large energy gap and chemical-mechanical stability. Here we present planar graphene/h-BN-heterostructure tunneling devices utilizing thin h-BN as a tunneling insulator. With much improved h-BN-tunneling-junction stability, we are able to probe all possible phonon modes of h-BN and graphite/graphene at Γ and K high symmetry points by inelastic tunneling spectroscopy. Additionally, we observe that low-frequency out-of-plane vibrations of h-BN and graphene lattices are significantly modified at heterostructure interfaces. Equipped with an external back gate, we can also detect high-order coupling phenomena between phonons and plasmons, demonstrating that h-BN-based tunneling device is a wonderful playground for investigating electron-phonon couplings in low-dimensional systems.

Quantized conductance doubling and hard gap in a two-dimensional semiconductor-superconductor heterostructure

DEFF Research Database (Denmark)

Kjærgaard, Morten; Nichele, F; Suominen, Henri Juhani

2016-01-01

topological matter is by coupling a 2D electron gas with strong spin-orbit interaction to an s-wave superconductor. Previous efforts along these lines have been adversely affected by interface disorder and unstable gating. Here we show measurements on a gateable InGaAs/InAs 2DEG with patterned epitaxial Al......, yielding devices with atomically pristine interfaces between semiconductor and superconductor. Using surface gates to form a quantum point contact (QPC), we find a hard superconducting gap in the tunnelling regime. When the QPC is in the open regime, we observe a first conductance plateau at 4e(2)/h...

Two dimensional tunable photonic crystals and n doped semiconductor materials

International Nuclear Information System (INIS)

Elsayed, Hussein A.; El-Naggar, Sahar A.; Aly, Arafa H.

2015-01-01

In this paper, we theoretically investigate the effect of the doping concentration on the properties of two dimensional semiconductor photonic band structures. We consider two structures; type I(II) that is composed of n doped semiconductor (air) rods arranged into a square lattice of air (n doped semiconductor). We consider three different shapes of rods. Our numerical method is based on the frequency dependent plane wave expansion method. The numerical results show that the photonic band gaps in type II are more sensitive to the changes in the doping concentration than those of type I. In addition, the width of the gap of type II is less sensitive to the shape of the rods than that of type I. Moreover, the cutoff frequency can be strongly tuned by the doping concentrations. Our structures could be of technical use in optical electronics for semiconductor applications

NATO Advanced Research Workshop on Optical Switching in Low-Dimensional Systems

CERN Document Server

Bányai, L

1989-01-01

This book contains all the papers presented at the NATO workshop on "Optical Switching in Low Dimensional Systems" held in Marbella, Spain from October 6th to 8th, 1988. Optical switching is a basic function for optical data processing, which is of technological interest because of its potential parallelism and its potential speed. Semiconductors which exhibit resonance enhanced optical nonlinearities in the frequency range close to the band edge are the most intensively studied materials for optical bistability and fast gate operation. Modern crystal growth techniques, particularly molecular beam epitaxy, allow the manufacture of semiconductor microstructures such as quantum wells, quantum wires and quantum dots in which the electrons are only free to move in two, one or zero dimensions, of the optically excited electron-hole pairs in these low respectively. The spatial confinement dimensional structures gives rise to an enhancement of the excitonic nonlinearities. Furthermore, the variations of the microstr...

Scalable solution-phase epitaxial growth of symmetry-mismatched heterostructures on two-dimensional crystal soft template.

Science.gov (United States)

Lin, Zhaoyang; Yin, Anxiang; Mao, Jun; Xia, Yi; Kempf, Nicholas; He, Qiyuan; Wang, Yiliu; Chen, Chih-Yen; Zhang, Yanliang; Ozolins, Vidvuds; Ren, Zhifeng; Huang, Yu; Duan, Xiangfeng

2016-10-01

Epitaxial heterostructures with precisely controlled composition and electronic modulation are of central importance for electronics, optoelectronics, thermoelectrics, and catalysis. In general, epitaxial material growth requires identical or nearly identical crystal structures with small misfit in lattice symmetry and parameters and is typically achieved by vapor-phase depositions in vacuum. We report a scalable solution-phase growth of symmetry-mismatched PbSe/Bi 2 Se 3 epitaxial heterostructures by using two-dimensional (2D) Bi 2 Se 3 nanoplates as soft templates. The dangling bond-free surface of 2D Bi 2 Se 3 nanoplates guides the growth of PbSe crystal without requiring a one-to-one match in the atomic structure, which exerts minimal restriction on the epitaxial layer. With a layered structure and weak van der Waals interlayer interaction, the interface layer in the 2D Bi 2 Se 3 nanoplates can deform to accommodate incoming layer, thus functioning as a soft template for symmetry-mismatched epitaxial growth of cubic PbSe crystal on rhombohedral Bi 2 Se 3 nanoplates. We show that a solution chemistry approach can be readily used for the synthesis of gram-scale PbSe/Bi 2 Se 3 epitaxial heterostructures, in which the square PbSe (001) layer forms on the trigonal/hexagonal (0001) plane of Bi 2 Se 3 nanoplates. We further show that the resulted PbSe/Bi 2 Se 3 heterostructures can be readily processed into bulk pellet with considerably suppressed thermal conductivity (0.30 W/m·K at room temperature) while retaining respectable electrical conductivity, together delivering a thermoelectric figure of merit ZT three times higher than that of the pristine Bi 2 Se 3 nanoplates at 575 K. Our study demonstrates a unique epitaxy mode enabled by the 2D nanocrystal soft template via an affordable and scalable solution chemistry approach. It opens up new opportunities for the creation of diverse epitaxial heterostructures with highly disparate structures and functions.

Inkjet printed ambipolar transistors and inverters based on carbon nanotube/zinc tin oxide heterostructures

Energy Technology Data Exchange (ETDEWEB)

Kim, Bongjun; Jang, Seonpil; Dodabalapur, Ananth, E-mail: ananth.dodabalapur@engr.utexas.edu [Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 (United States); Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States); Geier, Michael L.; Prabhumirashi, Pradyumna L. [Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States); Hersam, Mark C. [Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States); Department of Chemistry, Northwestern University, Evanston, Illinois 60208 (United States); Department of Medicine, Northwestern University, Evanston, Illinois 60208 (United States)

2014-02-10

We report ambipolar field-effect transistors (FETs) consisting of inkjet printed semiconductor bilayer heterostructures utilizing semiconducting single-walled carbon nanotubes (SWCNTs) and amorphous zinc tin oxide (ZTO). The bilayer structure allows for electron transport to occur principally in the amorphous oxide layer and hole transport to occur exclusively in the SWCNT layer. This results in balanced electron and hole mobilities exceeding 2 cm{sup 2} V{sup −1} s{sup −1} at low operating voltages (<5 V) in air. We further show that the SWCNT-ZTO hybrid ambipolar FETs can be integrated into functional inverter circuits that display high peak gain (>10). This work provides a pathway for realizing solution processable, inkjet printable, large area electronic devices, and systems based on SWCNT-amorphous oxide heterostructures.

Electromagnetic field enhancement effects in group IV semiconductor nanowires. A Raman spectroscopy approach

Science.gov (United States)

Pura, J. L.; Anaya, J.; Souto, J.; Prieto, A. C.; Rodríguez, A.; Rodríguez, T.; Periwal, P.; Baron, T.; Jiménez, J.

2018-03-01

Semiconductor nanowires (NWs) are the building blocks of future nanoelectronic devices. Furthermore, their large refractive index and reduced dimension make them suitable for nanophotonics. The study of the interaction between nanowires and visible light reveals resonances that promise light absorption/scattering engineering for photonic applications. Micro-Raman spectroscopy has been used as a characterization tool for semiconductor nanowires. The light/nanowire interaction can be experimentally assessed through the micro-Raman spectra of individual nanowires. As compared to both metallic and dielectric nanowires, semiconductor nanowires add additional tools for photon engineering. In particular, one can grow heterostructured nanowires, both axial and radial, and also one could modulate the doping level and the surface condition among other factors than can affect the light/NW interaction. We present herein a study of the optical response of group IV semiconductor nanowires to visible photons. The study is experimentally carried out through micro-Raman spectroscopy of different group IV nanowires, both homogeneous and axially heterostructured (SiGe/Si). The results are analyzed in terms of the electromagnetic modelling of the light/nanowire interaction using finite element methods. The presence of axial heterostructures is shown to produce electromagnetic resonances promising new photon engineering capabilities of semiconductor nanowires.

Atomic layer MoS2-graphene van der Waals heterostructure nanomechanical resonators.

Science.gov (United States)

Ye, Fan; Lee, Jaesung; Feng, Philip X-L

2017-11-30

Heterostructures play significant roles in modern semiconductor devices and micro/nanosystems in a plethora of applications in electronics, optoelectronics, and transducers. While state-of-the-art heterostructures often involve stacks of crystalline epi-layers each down to a few nanometers thick, the intriguing limit would be hetero-atomic-layer structures. Here we report the first experimental demonstration of freestanding van der Waals heterostructures and their functional nanomechanical devices. By stacking single-layer (1L) MoS 2 on top of suspended single-, bi-, tri- and four-layer (1L to 4L) graphene sheets, we realize an array of MoS 2 -graphene heterostructures with varying thickness and size. These heterostructures all exhibit robust nanomechanical resonances in the very high frequency (VHF) band (up to ∼100 MHz). We observe that fundamental-mode resonance frequencies of the heterostructure devices fall between the values of graphene and MoS 2 devices. Quality (Q) factors of heterostructure resonators are lower than those of graphene but comparable to those of MoS 2 devices, suggesting interface damping related to interlayer interactions in the van der Waals heterostructures. This study validates suspended atomic layer heterostructures as an effective device platform and provides opportunities for exploiting mechanically coupled effects and interlayer interactions in such devices.

Two-dimensional electron gas in AlGaN/GaN heterostructures

International Nuclear Information System (INIS)

Li, J.Z.; Lin, J.Y.; Jiang, H.X.; Khan, M.A.; Chen, Q.

1997-01-01

The formation of a two-dimensional electron gas (2DEG) system by an AlGaN/GaN heterostructure has been further confirmed by measuring its electrical properties. The effect of persistent photoconductivity (PPC) has been observed and its unique features have been utilized to study the properties of 2DEG formed by the AlGaN/GaN heterointerface. Sharp electronic transitions from the first to the second subbands in the 2DEG channel have been observed by monitoring the 2DEG carrier mobility as a function of carrier concentration through the use of PPC. These results are expected to have significant implications on field-effect transistor and high electron mobility transistor applications based on the GaN system. copyright 1997 American Vacuum Society

Semiconductor light sources fabricated by vapor phase epitaxial regrowth

International Nuclear Information System (INIS)

Powazinik, W.; Olshansky, R.; Meland, E.; Lauer, R.B.

1986-01-01

An extremely versatile technique for the fabrication of semiconductor light sources is described. The technique which is based on the halide vapor phase regrowth (VPR) of InP on channeled and selectively etched InGaAsP/InP double heterostructure material, results in a buried heterostructure (BH) index-guided VPR-BH diode laser structure which can be optimized for a number of different types of semiconductor light sources. The conditions and parameters associated with the halide VPR process are given, and the properties of the regrown InP are reported. The processing and characterization of high-frequency lasers with 18-GHz bandwidths and high-power lasers with cw single-spatial-mode powers of 60 mW are described. Additionally, the fabrication and characterization of superluminescent LEDs based on the this basic VPR-BH structure are described. These LEDs are capable of coupling more than 80 μW of optical power into a single-mode fiber at 100 mA, and can couple as much as 8 μW of optical power into a single-mode fiber at drive currents as low as 20 mA

Compound semiconductor device physics

CERN Document Server

Tiwari, Sandip

2013-01-01

This book provides one of the most rigorous treatments of compound semiconductor device physics yet published. A complete understanding of modern devices requires a working knowledge of low-dimensional physics, the use of statistical methods, and the use of one-, two-, and three-dimensional analytical and numerical analysis techniques. With its systematic and detailed**discussion of these topics, this book is ideal for both the researcher and the student. Although the emphasis of this text is on compound semiconductor devices, many of the principles discussed will also be useful to those inter

Quantum engineering of transistors based on 2D materials heterostructures

Science.gov (United States)

Iannaccone, Giuseppe; Bonaccorso, Francesco; Colombo, Luigi; Fiori, Gianluca

2018-03-01

Quantum engineering entails atom-by-atom design and fabrication of electronic devices. This innovative technology that unifies materials science and device engineering has been fostered by the recent progress in the fabrication of vertical and lateral heterostructures of two-dimensional materials and by the assessment of the technology potential via computational nanotechnology. But how close are we to the possibility of the practical realization of next-generation atomically thin transistors? In this Perspective, we analyse the outlook and the challenges of quantum-engineered transistors using heterostructures of two-dimensional materials against the benchmark of silicon technology and its foreseeable evolution in terms of potential performance and manufacturability. Transistors based on lateral heterostructures emerge as the most promising option from a performance point of view, even if heterostructure formation and control are in the initial technology development stage.

Quantum engineering of transistors based on 2D materials heterostructures.

Science.gov (United States)

Iannaccone, Giuseppe; Bonaccorso, Francesco; Colombo, Luigi; Fiori, Gianluca

2018-03-01

Quantum engineering entails atom-by-atom design and fabrication of electronic devices. This innovative technology that unifies materials science and device engineering has been fostered by the recent progress in the fabrication of vertical and lateral heterostructures of two-dimensional materials and by the assessment of the technology potential via computational nanotechnology. But how close are we to the possibility of the practical realization of next-generation atomically thin transistors? In this Perspective, we analyse the outlook and the challenges of quantum-engineered transistors using heterostructures of two-dimensional materials against the benchmark of silicon technology and its foreseeable evolution in terms of potential performance and manufacturability. Transistors based on lateral heterostructures emerge as the most promising option from a performance point of view, even if heterostructure formation and control are in the initial technology development stage.

Semiconductors and semimetals epitaxial microstructures

CERN Document Server

Willardson, Robert K; Beer, Albert C; Gossard, Arthur C

1994-01-01

Newly developed semiconductor microstructures can now guide light and electrons resulting in important consequences for state-of-the-art electronic and photonic devices. This volume introduces a new generation of epitaxial microstructures. Special emphasis has been given to atomic control during growth and the interrelationship between the atomic arrangements and the properties of the structures.Key Features* Atomic-level control of semiconductor microstructures* Molecular beam epitaxy, metal-organic chemical vapor deposition* Quantum wells and quantum wires* Lasers, photon(IR)detectors, heterostructure transistors

Magnetoresistance of a two-dimensional electron gas in a random magnetic field

DEFF Research Database (Denmark)

Smith, Anders; Taboryski, Rafael Jozef; Hansen, Luise Theil

1994-01-01

We report magnetoresistance measurements on a two-dimensional electron gas made from a high-mobility GaAs/AlxGa1-xAs heterostructure, where the externally applied magnetic field was expelled from regions of the semiconductor by means of superconducting lead grains randomly distributed on the surf...... on the surface of the sample. A theoretical explanation in excellent agreement with the experiment is given within the framework of the semiclassical Boltzmann equation. © 1994 The American Physical Society...

Evidence of Type-II Band Alignment in III-nitride Semiconductors: Experimental and theoretical investigation for In0.17Al0.83N/GaN heterostructures

Science.gov (United States)

Wang, Jiaming; Xu, Fujun; Zhang, Xia; An, Wei; Li, Xin-Zheng; Song, Jie; Ge, Weikun; Tian, Guangshan; Lu, Jing; Wang, Xinqiang; Tang, Ning; Yang, Zhijian; Li, Wei; Wang, Weiying; Jin, Peng; Chen, Yonghai; Shen, Bo

2014-01-01

Type-II band alignment structure is coveted in the design of photovoltaic devices and detectors, since it is beneficial for the transport of photogenerated carriers. Regrettably, for group-III-nitride wide bandgap semiconductors, all existing devices are limited to type-I heterostructures, owing to the unavailable of type-II ones. This seriously restricts the designing flexibility for optoelectronic devices and consequently the relevant performance of this material system. Here we show a brandnew type-II band alignment of the lattice-matched In0.17Al0.83N/GaN heterostructure from the perspective of both experimental observations and first-principle theoretical calculations. The band discontinuity is dominated by the conduction band offset ΔEC, with a small contribution from the valence band offset ΔEV which equals 0.1 eV (with being above). Our work may open up new prospects to realize high-performance III-Nitrides optoelectronic devices based on type-II energy band engineering. PMID:25283334

Interface Schottky barrier engineering via strain in metal-semiconductor composites

Science.gov (United States)

Ma, Xiangchao; Dai, Ying; Yu, Lin; Huang, Baibiao

2016-01-01

The interfacial carrier transfer property, which is dominated by the interface Schottky barrier height (SBH), plays a crucial role in determining the performance of metal-semiconductor heterostructures in a variety of applications. Therefore, artificially controlling the interface SBH is of great importance for their industrial applications. As a model system, the Au/TiO2 (001) heterostructure is studied using first-principles calculations and the tight-binding method in the present study. Our investigation demonstrates that strain can be an effective way to decrease the interface SBH and that the n-type SBH can be more effectively decreased than the p-type SBH. Astonishingly, strain affects the interface SBH mainly by changing the intrinsic properties of Au and TiO2, whereas the interfacial potential alignment is almost independent of strain due to two opposite effects, which are induced by strain at the interfacial region. These observed trends can be understood on the basis of the general free-electron gas model of typical metals, the tight-binding theory and the crystal-field theory, which suggest that similar trends may be generalized for many other metal-semiconductor heterostructures. Given the commonness and tunability of strain in typical heterostructures, we anticipate that the tunability of the interface SBH with strain described here can provide an alternative effective way for realizing more efficient applications of relevant heterostructures.The interfacial carrier transfer property, which is dominated by the interface Schottky barrier height (SBH), plays a crucial role in determining the performance of metal-semiconductor heterostructures in a variety of applications. Therefore, artificially controlling the interface SBH is of great importance for their industrial applications. As a model system, the Au/TiO2 (001) heterostructure is studied using first-principles calculations and the tight-binding method in the present study. Our investigation

Deep Ultraviolet Light Emitters Based on (Al,Ga)N/GaN Semiconductor Heterostructures

Science.gov (United States)

Liang, Yu-Han

Deep ultraviolet (UV) light sources are useful in a number of applications that include sterilization, medical diagnostics, as well as chemical and biological identification. However, state-of-the-art deep UV light-emitting diodes and lasers made from semiconductors still suffer from low external quantum efficiency and low output powers. These limitations make them costly and ineffective in a wide range of applications. Deep UV sources such as lasers that currently exist are prohibitively bulky, complicated, and expensive. This is typically because they are constituted of an assemblage of two to three other lasers in tandem to facilitate sequential harmonic generation that ultimately results in the desired deep UV wavelength. For semiconductor-based deep UV sources, the most challenging difficulty has been finding ways to optimally dope the (Al,Ga)N/GaN heterostructures essential for UV-C light sources. It has proven to be very difficult to achieve high free carrier concentrations and low resistivities in high-aluminum-containing III-nitrides. As a result, p-type doped aluminum-free III-nitrides are employed as the p-type contact layers in UV light-emitting diode structures. However, because of impedance-mismatch issues, light extraction from the device and consequently the overall external quantum efficiency is drastically reduced. This problem is compounded with high losses and low gain when one tries to make UV nitride lasers. In this thesis, we provide a robust and reproducible approach to resolving most of these challenges. By using a liquid-metal-enabled growth mode in a plasma-assisted molecular beam epitaxy process, we show that highly-doped aluminum containing III-nitride films can be achieved. This growth mode is driven by kinetics. Using this approach, we have been able to achieve extremely high p-type and n-type doping in (Al,Ga)N films with high aluminum content. By incorporating a very high density of Mg atoms in (Al,Ga)N films, we have been able to

Proximity effects in topological insulator heterostructures

International Nuclear Information System (INIS)

Li Xiao-Guang; Wu Guang-Fen; Zhang Gu-Feng; Culcer Dimitrie; Zhang Zhen-Yu; Chen Hua

2013-01-01

Topological insulators (TIs) are bulk insulators that possess robust helical conducting states along their interfaces with conventional insulators. A tremendous research effort has recently been devoted to Tl-based heterostructures, in which conventional proximity effects give rise to a series of exotic physical phenomena. This paper reviews our recent studies on the potential existence of topological proximity effects at the interface between a topological insulator and a normal insulator or other topologically trivial systems. Using first-principles approaches, we have realized the tunability of the vertical location of the topological helical state via intriguing dual-proximity effects. To further elucidate the control parameters of this effect, we have used the graphene-based heterostructures as prototypical systems to reveal a more complete phase diagram. On the application side of the topological helical states, we have presented a catalysis example, where the topological helical state plays an essential role in facilitating surface reactions by serving as an effective electron bath. These discoveries lay the foundation for accurate manipulation of the real space properties of the topological helical state in TI-based heterostructures and pave the way for realization of the salient functionality of topological insulators in future device applications. (topical review - low-dimensional nanostructures and devices)

Progress on Crystal Growth of Two-Dimensional Semiconductors for Optoelectronic Applications

Directory of Open Access Journals (Sweden)

Bingqi Sun

2018-06-01

Full Text Available Two-dimensional (2D semiconductors are thought to belong to the most promising candidates for future nanoelectronic applications, due to their unique advantages and capability in continuing the downscaling of complementary metal–oxide–semiconductor (CMOS devices while retaining decent mobility. Recently, optoelectronic devices based on novel synthetic 2D semiconductors have been reported, exhibiting comparable performance to the traditional solid-state devices. This review briefly describes the development of the growth of 2D crystals for applications in optoelectronics, including photodetectors, light-emitting diodes (LEDs, and solar cells. Such atomically thin materials with promising optoelectronic properties are very attractive for future advanced transparent optoelectronics as well as flexible and wearable/portable electronic devices.

Photosensitive heterostructures made of sulfonamide zinc phthalocyanine and organic semiconductor

Czech Academy of Sciences Publication Activity Database

Lutsyk, P.; Vertsimakha, Ya.; Nešpůrek, Stanislav; Pomaz, I.

2011-01-01

Roč. 535, - (2011), s. 18-29 ISSN 1542-1406 Institutional research plan: CEZ:AV0Z40500505 Keywords : heterostructure * reversal of sign in photovoltage spectra * sulphonamide-substituted phthalocyanine Subject RIV: CD - Macromolecular Chemistry Impact factor: 0.580, year: 2011

Internal optical bistability of quasi-two-dimensional semiconductor nanoheterostructures

Science.gov (United States)

Derevyanchuk, Oleksandr V.; Kramar, Natalia K.; Kramar, Valeriy M.

2018-01-01

We represent the results of numerical computations of the frequency and temperature domains of possible realization of internal optical bistability in flat quasi-two-dimensional semiconductor nanoheterostructures with a single quantum well (i.e., nanofilms). Particular computations have been made for a nanofilm of layered semiconductor PbI2 embedded in dielectric medium, i.e. ethylene-methacrylic acid (E-MAA) copolymer. It is shown that an increase in the nanofilm's thickness leads to a long-wave shift of the frequency range of the manifestation the phenomenon of bistability, to increase the size of the hysteresis loop, as well as to the expansion of the temperature interval at which the realization of this phenomenon is possible.

Aligned TiO₂ nanotube/nanoparticle heterostructures with enhanced electrochemical performance as three-dimensional anode for lithium-ion microbatteries.

Science.gov (United States)

Xie, Keyu; Guo, Min; Lu, Wei; Huang, Haitao

2014-11-14

A novel TiO₂ three-dimensional (3D) anode with an aligned TiO₂ nanotube/nanoparticle heterostructure (TiO₂ NTs/NPs) is developed by simply immersing as-anodized TiO₂ NTs into water and further crystallizing the TiO₂ NTs by post-annealing. The heterostructure, with its core in a tubular morphology and with both the outer and inner surface consisting of nanoparticles, is confirmed by FESEM and TEM. A reversible areal capacity of 0.126 mAh · cm(-2) is retained after 50 cycles for the TiO₂ NTs/NPs heterostructure electrode, which is higher than that of the TiO₂ NTs electrode (0.102 mAh · cm(-2) after 50 cycles). At the current densities of 0.02, 0.04, 0.06, 0.08, 0.10 and 0.20 mA · cm(-2), the areal capacities are 0.142, 0.127, 0.117, 0.110, 0.104 and 0.089 mAh · cm(-2), respectively, for the TiO₂ NTs/NPs heterostructure electrode compared to the areal capacities of 0.123, 0.112, 0.105, 0.101, 0.094 and 0.083 mAh · cm(-2), respectively, for the the TiO₂ NTs electrode. The enhanced electrochemical performance is attributed to the unique microstructure of the TiO₂ NTs/NPs heterostructure electrode with the TiO₂ NT core used as a straight pathway for electronic transport and with TiO₂ NP offering enhanced surface areas for facile Li+ insertion/extraction. The results described here inspire a facile approach to fabricate a 3D anode with an enhanced electrochemical performance for lithium-ion microbattery applications.

Approximate approaches to the one-dimensional finite potential well

International Nuclear Information System (INIS)

Singh, Shilpi; Pathak, Praveen; Singh, Vijay A

2011-01-01

The one-dimensional finite well is a textbook problem. We propose approximate approaches to obtain the energy levels of the well. The finite well is also encountered in semiconductor heterostructures where the carrier mass inside the well (m i ) is taken to be distinct from mass outside (m o ). A relevant parameter is the mass discontinuity ratio β = m i /m o . To correctly account for the mass discontinuity, we apply the BenDaniel-Duke boundary condition. We obtain approximate solutions for two cases: when the well is shallow and when the well is deep. We compare the approximate results with the exact results and find that higher-order approximations are quite robust. For the shallow case, the approximate solution can be expressed in terms of a dimensionless parameter σ l = 2m o V 0 L 2 /ℎ 2 (or σ = β 2 σ l for the deep case). We show that the lowest-order results are related by a duality transform. We also discuss how the energy upscales with L (E∼1/L γ ) and obtain the exponent γ. Exponent γ → 2 when the well is sufficiently deep and β → 1. The ratio of the masses dictates the physics. Our presentation is pedagogical and should be useful to students on a first course on elementary quantum mechanics or low-dimensional semiconductors.

Physics of SrTiO3-based heterostructures and nanostructures: a review.

Science.gov (United States)

Pai, Yun-Yi; Tylan-Tyler, Anthony; Irvin, Patrick; Levy, Jeremy

2018-02-09

This review provides a summary of the rich physics expressed within SrTiO 3 -based heterostructures and nanostructures. The intended audience is researchers who are working in the field of oxides, but also those with different backgrounds (e.g., semiconductor nanostructures). After reviewing the relevant properties of SrTiO 3 itself, we will then discuss the basics of SrTiO 3 -based heterostructures, how they can be grown, and how devices are typically fabricated. Next, we will cover the physics of these heterostructures, including their phase diagram and coupling between the various degrees of freedom. Finally, we will review the rich landscape of quantum transport phenomena, as well as the devices that elicit them.

Physics of SrTiO3-based heterostructures and nanostructures: a review

Science.gov (United States)

Pai, Yun-Yi; Tylan-Tyler, Anthony; Irvin, Patrick; Levy, Jeremy

2018-03-01

This review provides a summary of the rich physics expressed within SrTiO3-based heterostructures and nanostructures. The intended audience is researchers who are working in the field of oxides, but also those with different backgrounds (e.g., semiconductor nanostructures). After reviewing the relevant properties of SrTiO3 itself, we will then discuss the basics of SrTiO3-based heterostructures, how they can be grown, and how devices are typically fabricated. Next, we will cover the physics of these heterostructures, including their phase diagram and coupling between the various degrees of freedom. Finally, we will review the rich landscape of quantum transport phenomena, as well as the devices that elicit them.

Two-dimensional hole systems in indium-based quantum well heterostructures

Energy Technology Data Exchange (ETDEWEB)

Loher, Josef

2016-08-01

The complex spin-orbit interaction (SOI) of two-dimensional hole gas (2DHG) systems - the relativistic coupling of the hole spin degree of freedom to their movement in an electric field - is of fundamental interest in spin physics due to its key role for spin manipulation in spintronic devices. In this work, we were able to evaluate the tunability of Rashba-SOI-related parameters in the 2DHG system of InAlAs/InGaAs/InAs:Mn quantum well heterostructures experimentally by analyzing the hole density evolution of quantum interference effects at low magnetic fields. We achieved to cover a significant range of hole densities by the joint action of the variation of the manganese modulation doping concentration during molecular beam epitaxy and external field-effect-mediated manipulation of the 2D carrier density in Hall bar devices by a metallic topgate. Within these magnetotransport experiments, a reproducible phenomenon of remarkable robustness emerged in the transverse Hall magnetoresistivity of the indium 2DHG systems which are grown on a special InAlAs step-graded metamorphic buffer layer structure to compensate crystal lattice mismatch. As a consequence of the strain relaxation process, these material systems are characterized by anisotropic properties along different crystallographic directions. We identify a puzzling offset phenomenon in the zero-field Hall magnetoresistance and demonstrate it to be a universal effect in systems with spatially anisotropic transport properties.

Research on the radiation exposure “memory effects” in AlGaAs heterostructures

International Nuclear Information System (INIS)

Gradoboev, A V; Sednev, V V

2015-01-01

Radiation exposure and long running time cause degradation of semiconductors' structures as well as semiconductors based on these structures. Besides, long running time can be the reason of partial radiation defects annealing. The purpose of the research work is to study the “memory effect” that happens during fast neuron radiation in AlGaAs heterostructures. Objects of the research are Infrared Light Emitting Electrodes (IRED) based on doubled AlGaAs heterostructures. During the experimental research LEDs were preliminarily radiated with fast neutrons, and radiation defects were annealed within the condition of current training with high temperatures, then emission power was measured. The research proved the existence of the “memory effect” that results in radiation stability enhancement with subsequent radiation. Possible mechanisms of the “memory effect” occurrence are under review. (paper)

The relationship between the dislocations and microstructure in In0.82Ga0.18As/InP heterostructures.

Science.gov (United States)

Zhao, Liang; Guo, Zuoxing; Wei, Qiulin; Miao, Guoqing; Zhao, Lei

2016-10-11

In this work, we propose a formation mechanism to explain the relationship between the surface morphology (and microstructure) and dislocations in the In 0.82 Ga 0.18 As/InP heterostructure. The In 0.82 Ga 0.18 As epitaxial layers were grown on the InP (100) substrate at various temperatures (430 °C, 410 °C and 390 °C) using low pressure metalorganic chemical vapor deposition (LP-MOCVD). Obvious protrusions and depressions were obseved on the surface of the In 0.82 Ga 0.18 As/InP heterostructure because of the movement of dislocations from the core to the surface. The surface morphologies of the In 0.82 Ga 0.18 As/InP (100) system became uneven with increasing temperature, which was associated with the formation of dislocations. Such research investigating the dislocation of large lattice mismatch heterostructures may play an important role in the future-design of semiconductor films.

Three-dimensional charge transport in organic semiconductor single crystals.

Science.gov (United States)

He, Tao; Zhang, Xiying; Jia, Jiong; Li, Yexin; Tao, Xutang

2012-04-24

Three-dimensional charge transport anisotropy in organic semiconductor single crystals - both plates and rods (above and below, respectively, in the figure) - is measured in well-performing organic field-effect transistors for the first time. The results provide an excellent model for molecular design and device preparation that leads to good performance. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Growth of low disorder GaAs/AlGaAs heterostructures by molecular beam epitaxy for the study of correlated electron phases in two dimensions

Science.gov (United States)

Watson, John D.

The unparalleled quality of GaAs/AlGaAs heterostructures grown by molecular beam epitaxy has enabled a wide range of experiments probing interaction effects in two-dimensional electron and hole gases. This dissertation presents work aimed at further understanding the key material-related issues currently limiting the quality of these 2D systems, particularly in relation to the fractional quantum Hall effect in the 2nd Landau level and spin-based implementations of quantum computation. The manuscript begins with a theoretical introduction to the quantum Hall effect which outlines the experimental conditions necessary to study the physics of interest and motivates the use of the semiconductor growth and cryogenic measurement techniques outlined in chapters 2 and 3, respectively. In addition to a generic introduction to the molecular beam epitaxy growth technique, chapter 2 summarizes some of what was learned about the material purity issues currently limiting the low temperature electron mobility. Finally, a series of appendices are included which detail the experimental methods used over the course of the research. Chapter 4 presents an experiment examining transport in a low density two-dimensional hole system in which the hole density could be varied by means of an evaporated back gate. At low temperature, the mobility reached a maximum of 2.6 x 106 cm2/Vs at a density of 6.2 x 1010 cm-2 which is the highest reported mobility in a two-dimensional hole system to date. In addition, it was found that the mobility as a function of density did not follow a power law with a single exponent. Instead, it was found that the power law varied with density, indicating a cross-over between dominant scattering mechanisms at low density and high density. At low density the mobility was found to be limited by remote ionized impurity scattering, while at high density the dominant scattering mechanism was found to be background impurity scattering. Chapter 5 details an experiment

Heterostructures based on inorganic and organic van der Waals systems

International Nuclear Information System (INIS)

Lee, Gwan-Hyoung; Lee, Chul-Ho; Zande, Arend M. van der; Han, Minyong; Cui, Xu; Arefe, Ghidewon; Hone, James; Nuckolls, Colin; Heinz, Tony F.; Kim, Philip

2014-01-01

The two-dimensional limit of layered materials has recently been realized through the use of van der Waals (vdW) heterostructures composed of weakly interacting layers. In this paper, we describe two different classes of vdW heterostructures: inorganic vdW heterostructures prepared by co-lamination and restacking; and organic-inorganic hetero-epitaxy created by physical vapor deposition of organic molecule crystals on an inorganic vdW substrate. Both types of heterostructures exhibit atomically clean vdW interfaces. Employing such vdW heterostructures, we have demonstrated various novel devices, including graphene/hexagonal boron nitride (hBN) and MoS 2 heterostructures for memory devices; graphene/MoS 2 /WSe 2 /graphene vertical p-n junctions for photovoltaic devices, and organic crystals on hBN with graphene electrodes for high-performance transistors

Photoluminescence and photocatalytic activities of Ag/ZnO metal-semiconductor heterostructure

International Nuclear Information System (INIS)

Sarma, Bikash; Deb, Sujit Kumar; Sarma, Bimal K.

2016-01-01

Present article focuses on the photocatalytic activities of ZnO nanorods and Ag/ZnO heterostructure deposited on polyethylene terephthalate (PET) substrate. ZnO nanorods are synthesized by thermal decomposition technique and Ag nanoparticles deposition is done by photo-deposition technique using UV light. X-ray diffraction studies reveal that the ZnO nanorods are of hexagonal wurtzite structure. Further, as-prepared samples are characterized by Scanning Electron Microscopy (SEM), Photoluminescence (PL) spectroscopy and UV-Vis spectroscopy. The surface plasmon resonance response of Ag/ZnO is found at 420 nm. The photocatalytic activities of the samples are evaluated by photocatalytic decolorization of methyl orange (MO) dye with UV irradiation. The degradation rate of MO increases with increase in irradiation time. The degradation of MO follows the first order kinetics. The photocatalytic activity of Ag/ZnO heterostructure is found to be more than that of ZnO nanorods. The PL intensity of ZnO nanorods is stronger than that of the Ag/ZnO heterostructure. The strong PL intensity indicates high recombination rate of photoinduced charge carriers which lowers the photocatalytic activity of ZnO nanorods. The charge carrier recombination is effectively suppressed by introducing Ag nanoparticles on the surface of the ZnO nanorods. This study demonstrates a strong relationship between PL intensity and photocatalytic activity. (paper)

Interface-engineered oxygen octahedral coupling in manganite heterostructures

Science.gov (United States)

Huijben, M.; Koster, G.; Liao, Z. L.; Rijnders, G.

2017-12-01

Control of the oxygen octahedral coupling (OOC) provides a large degree of freedom to manipulate physical phenomena in complex oxide heterostructures. Recently, local tuning of the tilt angle has been found to control the magnetic anisotropy in ultrathin films of manganites and ruthenates, while symmetry control can manipulate the metal insulator transition in nickelate thin films. The required connectivity of the octahedra across the heterostructure interface enforces a geometric constraint to the 3-dimensional octahedral network in epitaxial films. Such geometric constraint will either change the tilt angle to retain the connectivity of the corner shared oxygen octahedral network or guide the formation of a specific symmetry throughout the epitaxial film. Here, we will discuss the control of OOC in manganite heterostructures by interface-engineering. OOC driven magnetic and transport anisotropies have been realized in LSMO/NGO heterostructures. Competition between the interfacial OOC and the strain further away from the interface leads to a thickness driven sharp transition of the anisotropic properties. Furthermore, octahedral relaxation leading to a change of p-d hybridization driven by interfacial OOC appears to be the strongest factor in thickness related variations of magnetic and transport properties in epitaxial LSMO films on NGO substrates. The results unequivocally link the atomic structure near the interfaces to the macroscopic properties. The strong correlation between a controllable oxygen network and the functionalities will have significant impact on both fundamental research and technological application of correlated perovskite heterostructures. By controlling the interfacial OOC, it is possible to pattern in 3 dimensions the magnetization to achieve non-collinear magnetization in both in-plane and out of plane directions, thus making the heterostructures promising for application in orthogonal spin transfer devices, spin oscillators, and low

Excitonic effects and related properties in semiconductor nanostructures: roles of size and dimensionality

Science.gov (United States)

Wu, Shudong; Cheng, Liwen; Wang, Qiang

2017-08-01

The size- and dimensionality-dependence of excitonic effects and related properties in semiconductor nanostructures are theoretically studied in detail within the effective-mass approximation. When nanostructure sizes become smaller than the bulk exciton Bohr radius, excitonic effects are significantly enhanced with reducing size or dimensionality. This is as a result of quantum confinement in more directions leading to larger exciton binding energies and normalized exciton oscillator strengths. These excitonic effects originate from electron-hole Coulombic interactions, which strongly enhance the oscillator strength between the electron and hole. It is also established that the universal scaling of exciton binding energy versus the inverse of the exciton Bohr radius follows a linear scaling law. Herein, we propose a stretched exponential law for the size scaling of optical gap, which is in good agreement with the calculated data. Due to differences in the confinement dimensionality, the radiative lifetime of low-dimensional excitons becomes shorter than that of bulk excitons. The size dependence of the exciton radiative lifetimes is in good agreement with available experimental data. This strongly enhanced electron-hole exchange interaction is expected in low-dimensional structures due to enriched excitonic effects. The main difference in nanostructures compared to the bulk can be interpreted in terms of the enhanced excitonic effects induced by exciton localization. The enhanced excitonic effects are expected to be of importance in developing stable and high-efficiency nanoscale excitonic optoelectronic devices.

Interfacial nondegenerate doping of MoS2 and other two-dimensional semiconductors.

Science.gov (United States)

Behura, Sanjay; Berry, Vikas

2015-03-24

Controlled nondegenerate doping of two-dimensional semiconductors (2DSs) with their ultraconfined carriers, high quantum capacitance, and surface-sensitive electronics can enable tuning their Fermi levels for rational device design. However, doping techniques for three-dimensional semiconductors, such as ion implantation, cannot be directly applied to 2DSs because they inflict high defect density. In this issue of ACS Nano, Park et al. demonstrate that interfacing 2DSs with substrates having dopants can controllably inject carriers to achieve nondegenerate doping, thus significantly broadening 2DSs' functionality and applications. Futuristically, this can enable complex spatial patterning/contouring of energy levels in 2DSs to form p-n junctions, integrated logic, and opto/electronic devices. The process is also extendable to biocellular-interfaced devices, band-continuum structures, and intricate 2D circuitry.

X = S, Se, Te) heterostructures

KAUST Repository

Zhang, Qingyun; Schwingenschlö gl, Udo

2018-01-01

Using first-principles calculations, we investigate the electronic properties of the two-dimensional GaX/MX2 (M = Mo, W; X = S, Se, Te) heterostructures. Orbital hybridization between GaX and MX2 is found to result in Rashba splitting at the valence

Schottky nanocontact of one-dimensional semiconductor nanostructures probed by using conductive atomic force microscopy

Science.gov (United States)

Lee, Jung Ah; Rok Lim, Young; Jung, Chan Su; Choi, Jun Hee; Im, Hyung Soon; Park, Kidong; Park, Jeunghee; Kim, Gyu Tae

2016-10-01

To develop the advanced electronic devices, the surface/interface of each component must be carefully considered. Here, we investigate the electrical properties of metal-semiconductor nanoscale junction using conductive atomic force microscopy (C-AFM). Single-crystalline CdS, CdSe, and ZnO one-dimensional nanostructures are synthesized via chemical vapor transport, and individual nanobelts (or nanowires) are used to fabricate nanojunction electrodes. The current-voltage (I -V) curves are obtained by placing a C-AFM metal (PtIr) tip as a movable contact on the nanobelt (or nanowire), and often exhibit a resistive switching behavior that is rationalized by the Schottky (high resistance state) and ohmic (low resistance state) contacts between the metal and semiconductor. We obtain the Schottky barrier height and the ideality factor through fitting analysis of the I-V curves. The present nanojunction devices exhibit a lower Schottky barrier height and a higher ideality factor than those of the bulk materials, which is consistent with the findings of previous works on nanostructures. It is shown that C-AFM is a powerful tool for characterization of the Schottky contact of conducting channels between semiconductor nanostructures and metal electrodes.

M = Mo, W; X = S, Se, Te) heterostructures

KAUST Repository

Zhang, Qingyun

2018-04-16

Using first-principles calculations, we investigate the electronic properties of the two-dimensional GaX/MX2 (M = Mo, W; X = S, Se, Te) heterostructures. Orbital hybridization between GaX and MX2 is found to result in Rashba splitting at the valence-band edge around the Γ point, which grows for increasing strength of the spin-orbit coupling in the p orbitals of the chalcogenide atoms. The location of the valence-band maximum in the Brillouin zone can be tuned by strain and application of an out-of-plane electric field. The coexistence of Rashba splitting (in-plane spin direction) and band splitting at the K and K′ valleys (out-of-plane spin direction) makes GaX/MX2 heterostructures interesting for spintronics and valleytronics. They are promising candidates for two-dimensional spin-field-effect transistors and spin-valley Hall effect devices. Our findings shed light on the spin-valley coupling in van der Waals heterostructures.

Two-dimensional heterostructures of V2O5 and reduced graphene oxide as electrodes for high energy density asymmetric supercapacitors

KAUST Repository

Nagaraju, Doddahalli H.

2014-08-27

In this article, we report the synthesis of electrode materials based on two-dimensional (2D) heterostructures of V2O5 nanosheets (V2O5 NS) and reduced graphene oxide (rGO) electrodes for asymmetric supercapacitor applications. Specifically, the 2D V2O5 and rGO/V2O5 nanosheet electrodes showed a specific capacitance of 253 F g-1 and 635 F g-1, respectively at a current density of 1 A g-1. The capacitance of the heterostructures is almost 2.5 times higher than the 2D V2O5 nanosheets alone. The corresponding energy density of 39 Wh kg-1 and 79.5 Wh kg-1 were achieved for the two electrodes at a power density of 900 W kg-1 in an asymmetric supercapacitor configuration. The energy and power density using the nanosheet heterostructure are, to our knowledge, higher than any of those that were previously reported for asymmetric supercapacitors using V2O5 electrodes. This journal is

Nonradiative lifetime extraction using power-dependent relative photoluminescence of III-V semiconductor double-heterostructures

Energy Technology Data Exchange (ETDEWEB)

Walker, A. W., E-mail: alexandre.walker@ise.fraunhofer.de; Heckelmann, S.; Karcher, C.; Höhn, O.; Went, C.; Niemeyer, M.; Bett, A. W.; Lackner, D. [Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstraße 2, 79110 Freiburg (Germany)

2016-04-21

A power-dependent relative photoluminescence measurement method is developed for double-heterostructures composed of III-V semiconductors. Analyzing the data yields insight into the radiative efficiency of the absorbing layer as a function of laser intensity. Four GaAs samples of different thicknesses are characterized, and the measured data are corrected for dependencies of carrier concentration and photon recycling. This correction procedure is described and discussed in detail in order to determine the material's Shockley-Read-Hall lifetime as a function of excitation intensity. The procedure assumes 100% internal radiative efficiency under the highest injection conditions, and we show this leads to less than 0.5% uncertainty. The resulting GaAs material demonstrates a 5.7 ± 0.5 ns nonradiative lifetime across all samples of similar doping (2–3 × 10{sup 17 }cm{sup −3}) for an injected excess carrier concentration below 4 × 10{sup 12 }cm{sup −3}. This increases considerably up to longer than 1 μs under high injection levels due to a trap saturation effect. The method is also shown to give insight into bulk and interface recombination.

Vertical field effect tunneling transistor based on graphene-ultrathin Si nanomembrane heterostructures

Science.gov (United States)

Das, Tanmoy; Jang, Houk; Bok Lee, Jae; Chu, Hyunwoo; Kim, Seong Dae; Ahn, Jong-Hyun

2015-12-01

Graphene-based heterostructured vertical transistors have attracted a great deal of research interest. Herein we propose a Si-based technology platform for creating graphene/ultrathin semiconductor/metal (GSM) junctions, which can be applied to large-scale and low-power electronics compatible with a variety of substrates. We fabricated graphene/Si nanomembrane (NM)/metal vertical heterostructures by using a dry transfer technique to transfer Si NMs onto chemical vapor deposition-grown graphene layers. The resulting van der Waals interfaces between graphene and p-Si NMs exhibited nearly ideal Schottky barrier behavior. Due to the low density of states of graphene, the graphene/Si NM Schottky barrier height can be modulated by modulating the band profile in the channel region, yielding well-defined current modulation. We obtained a maximum current on/off ratio (Ion/Ioff) of up to ˜103, with a current density of 102 A cm-2. We also observed significant dependence of Schottky barrier height Δφb on the thickness of the Si NMs. We confirmed that the transport in these devices is dominated by the effects of the graphene/Si NM Schottky barrier.

Vertical field effect tunneling transistor based on graphene-ultrathin Si nanomembrane heterostructures

International Nuclear Information System (INIS)

Das, Tanmoy; Jang, Houk; Bok Lee, Jae; Chu, Hyunwoo; Dae Kim, Seong; Ahn, Jong-Hyun

2015-01-01

Graphene-based heterostructured vertical transistors have attracted a great deal of research interest. Herein we propose a Si-based technology platform for creating graphene/ultrathin semiconductor/metal (GSM) junctions, which can be applied to large-scale and low-power electronics compatible with a variety of substrates. We fabricated graphene/Si nanomembrane (NM)/metal vertical heterostructures by using a dry transfer technique to transfer Si NMs onto chemical vapor deposition-grown graphene layers. The resulting van der Waals interfaces between graphene and p-Si NMs exhibited nearly ideal Schottky barrier behavior. Due to the low density of states of graphene, the graphene/Si NM Schottky barrier height can be modulated by modulating the band profile in the channel region, yielding well-defined current modulation. We obtained a maximum current on/off ratio (I on /I off ) of up to ∼10 3 , with a current density of 10 2 A cm −2 . We also observed significant dependence of Schottky barrier height Δφ b on the thickness of the Si NMs. We confirmed that the transport in these devices is dominated by the effects of the graphene/Si NM Schottky barrier. (paper)

The photoelectric yield technique for the characterization of the semiconductor heterostructures

International Nuclear Information System (INIS)

Evangelisti, F.; Di Gaspare, L.

1998-01-01

The paper discusses the use of the photoelectric yield spectroscopy for investigating surface defects and interfaces. Few examples are presented that clearly show the usefulness of the techniques. The heterostructures discussed include crystalline/amorphous and crystalline/crystalline systems

Point Defects in Two-Dimensional Layered Semiconductors: Physics and Its Applications

Science.gov (United States)

Suh, Joonki

thermoelectric materials are thoroughly investigated. Point defects can potentially beat the undesired coupling, often term "thermoelectric Bermuda triangle", among electrical conductivity, thermal conductivity and thermopower. The maximum thermoelectric performance is demonstrated with an intermediate density of defects when they beneficially and multi-functionally act as electron donors, as well as strongly energy-dependent electron and phonon scatterers. Therefore, this is a good example of how fundamental defect physics can be applied for practical devices toward renewable energy technology. Another interesting field of layered nanomaterials is on transition-metal dichalcogenides (TMDs), sensational candidates for 2D semiconductor physics and applications. At the reduced dimensionality of 2D where a far stronger correlation between point defects and charge carriers is expected, it is studied how chalcogen vacancies alter optical properties of monolayer TMDs. A new, sub-bandgap broad emission lines as well as increase in the overall photoluminescence intensity at low temperatures are reported as a result of high quantum efficiency of excitons, i.e., bound electron-hole pairs, localized at defect sites. On electrical transport, both n- and p-type materials are needed to form junctions and support bipolar carrier conduction while typically only one type of doping is stable for a particular TMD. For example, MoS2 is natively n-type, thus the lack of p-type doping hampers the development of charge-splitting p-n junctions of MoS2. To address this issue, we demonstrate stable p-type conduction in MoS2 by substitutional Nb doping up to the degenerate level. Proof-of-concept, van der Waals p-n homo-junctions based on vertically stacked MoS2 layers are also fabricated which enable gate-tuneable current rectification. Various electronic devices fabricated are stable in ambient air even without additional treatment such as capping layer protection, thanks to the substitutionality nature

Prediction of two-dimensional diluted magnetic semiconductors: Doped monolayer MoS2 systems

KAUST Repository

Cheng, Yingchun

2013-03-05

Using first-principles calculations, we propose a two-dimensional diluted magnetic semiconductor: monolayer MoS2 doped by transition metals. Doping of transition metal atoms from the IIIB to VIB groups results in nonmagnetic states, since the number of valence electrons is smaller or equal to that of Mo. Doping of atoms from the VIIB to IIB groups becomes energetically less and less favorable. Magnetism is observed for Mn, Fe, Co, Zn, Cd, and Hg doping, while for the other dopants from these groups it is suppressed by Jahn-Teller distortions. Analysis of the binding energies and magnetic properties indicates that (Mo,X)S2 (X=Mn, Fe, Co, and Zn) are promising systems to explore two-dimensional diluted magnetic semiconductors.

Stable Graphene-Two-Dimensional Multiphase Perovskite Heterostructure Phototransistors with High Gain.

Science.gov (United States)

Shao, Yuchuan; Liu, Ye; Chen, Xiaolong; Chen, Chen; Sarpkaya, Ibrahim; Chen, Zhaolai; Fang, Yanjun; Kong, Jaemin; Watanabe, Kenji; Taniguchi, Takashi; Taylor, André; Huang, Jinsong; Xia, Fengnian

2017-12-13

Recently, two-dimensional (2D) organic-inorganic perovskites emerged as an alternative material for their three-dimensional (3D) counterparts in photovoltaic applications with improved moisture resistance. Here, we report a stable, high-gain phototransistor consisting of a monolayer graphene on hexagonal boron nitride (hBN) covered by a 2D multiphase perovskite heterostructure, which was realized using a newly developed two-step ligand exchange method. In this phototransistor, the multiple phases with varying bandgap in 2D perovskite thin films are aligned for the efficient electron-hole pair separation, leading to a high responsivity of ∼10 5 A W -1 at 532 nm. Moreover, the designed phase alignment method aggregates more hydrophobic butylammonium cations close to the upper surface of the 2D perovskite thin film, preventing the permeation of moisture and enhancing the device stability dramatically. In addition, faster photoresponse and smaller 1/f noise observed in the 2D perovskite phototransistors indicate a smaller density of deep hole traps in the 2D perovskite thin film compared with their 3D counterparts. These desirable properties not only improve the performance of the phototransistor, but also provide a new direction for the future enhancement of the efficiency of 2D perovskite photovoltaics.

Unidirectional Wave Propagation in Low-Symmetric Colloidal Photonic-Crystal Heterostructures

OpenAIRE

Yannopapas, Vassilios

2015-01-01

We show theoretically that photonic crystals consisting of colloidal spheres exhibit unidirectional wave propagation and one-way frequency band gaps without breaking time-reversal symmetry via, e.g., the application of an external magnetic field or the use of nonlinear materials. Namely, photonic crystals with low symmetry such as the monoclinic crystal type considered here as well as with unit cells formed by the heterostructure of different photonic crystals show significant unidirectional ...

Surface and Interface Engineering of Organometallic and Two Dimensional Semiconductor

Science.gov (United States)

Park, Jun Hong

For over half a century, inorganic Si and III-V materials have led the modern semiconductor industry, expanding to logic transistor and optoelectronic applications. However, these inorganic materials have faced two different fundamental limitations, flexibility for wearable applications and scaling limitation as logic transistors. As a result, the organic and two dimensional have been studied intentionally for various fields. In the present dissertation, three different studies will be presented with followed order; (1) the chemical response of organic semiconductor in NO2 exposure. (2) The surface and stability of WSe2 in ambient air. (3) Deposition of dielectric on two dimensional materials using organometallic seeding layer. The organic molecules rely on the van der Waals interaction during growth of thin films, contrast to covalent bond inorganic semiconductors. Therefore, the morphology and electronic property at surface of organic semiconductor in micro scale is more sensitive to change in gaseous conditions. In addition, metal phthalocyanine, which is one of organic semiconductor materials, change their electronic property as reaction with gaseous analytes, suggesting as potential chemical sensing platforms. In the present part, the growth behavior of metal phthalocyanine and surface response to gaseous condition will be elucidated using scanning tunneling microscopy (STM). In second part, the surface of layered transition metal dichalcogenides and their chemical response to exposure ambient air will be investigated, using STM. Layered transition metal dichalcogenides (TMDs) have attracted widespread attention in the scientific community for electronic device applications because improved electrostatic gate control and suppression of short channel leakage resulted from their atomic thin body. To fabricate the transistor based on TMDs, TMDs should be exposed to ambient conditions, while the effect of air exposure has not been understood fully. In this part

The hot pick-up technique for batch assembly of van der Waals heterostructures

DEFF Research Database (Denmark)

Pizzocchero, Filippo; Gammelgaard, Lene; Jessen, Bjarke Sørensen

2016-01-01

The assembly of individual two-dimensional materials into van der Waals heterostructures enables the construction of layered three-dimensional materials with desirable electronic and optical properties. A core problem in the fabrication of these structures is the formation of clean interfaces...... between the individual two-dimensional materials which would affect device performance. We present here a technique for the rapid batch fabrication of van der Waals heterostructures, demonstrated by the controlled production of 22 mono-, bi- and trilayer graphene stacks encapsulated in hexagonal boron...

Theory of semiconductor laser cooling

Science.gov (United States)

Rupper, Greg

Recently laser cooling of semiconductors has received renewed attention, with the hope that a semiconductor cooler might be able to achieve cryogenic temperatures. In order to study semiconductor laser cooling at cryogenic temperatures, it is crucial that the theory include both the effects of excitons and the electron-hole plasma. In this dissertation, I present a theoretical analysis of laser cooling of bulk GaAs based on a microscopic many-particle theory of absorption and luminescence of a partially ionized electron-hole plasma. This theory has been analyzed from a temperature 10K to 500K. It is shown that at high temperatures (above 300K), cooling can be modeled using older models with a few parameter changes. Below 200K, band filling effects dominate over Auger recombination. Below 30K excitonic effects are essential for laser cooling. In all cases, excitonic effects make cooling easier then predicted by a free carrier model. The initial cooling model is based on the assumption of a homogeneous undoped semiconductor. This model has been systematically modified to include effects that are present in real laser cooling experiments. The following modifications have been performed. (1) Propagation and polariton effects have been included. (2) The effect of p-doping has been included. (n-doping can be modeled in a similar fashion.) (3) In experiments, a passivation layer is required to minimize non-radiative recombination. The passivation results in a npn heterostructure. The effect of the npn heterostructure on cooling has been analyzed. (4) The effect of a Gaussian pump beam was analyzed and (5) Some of the parameters in the cooling model have a large uncertainty. The effect of modifying these parameters has been analyzed. Most of the extensions to the original theory have only had a modest effect on the overall results. However we find that the current passivation technique may not be sufficient to allow cooling. The passivation technique currently used appears

Strain in GaAs / InAs core-shell nanowire heterostructures grown on GaAs

Energy Technology Data Exchange (ETDEWEB)

Biermanns, Andreas; Davydok, Anton; Pietsch, Ullrich [Universitaet Siegen, Festkoerperphysik (Germany); Rieger, Torsten; Lepsa, Mihail Ion [Peter Gruenberg Institut 9, Forschungszentrum Juelich (Germany); JARA - Fundamentals of Future Information Technology (Germany)

2012-07-01

The growth of semiconductor nanowires (NWs) has attracted significant interest in recent years due to the possible fabrication of novel semiconductor devices for future electronic and opto-electronic applications. Compared to planar heterostructures, the nanowire approach offers an advantage regarding the possibility to form heterostructures between highly lattice mismatched systems, because the free surface of the nanowires allows to relieve the strain more efficiently. One particular way to form heterostructures in the NW geometry, is the fabrication of core-shell devices, in which a NW core is surrounded by a shell of different material. The understanding of the mutual strain between core and shell, as well as the relaxation behavior of the system are crucial for the fabrication of functional devices. In this contribution we report on first X-ray diffraction measurements of GaAs-core/InAs-shell nanowires grown on GaAs(111) by molecular beam epitaxy. Using symmetric- and grazing-incidence X-ray diffraction, the relaxation state of the InAs shell as well as the strain in the GaAs core are measured as function of the InAs shell thickness, showing a gradual relaxation behavior of the shell.

Integration, gap formation, and sharpening of III-V heterostructure nanowires by selective etching

DEFF Research Database (Denmark)

Kallesoe, C.; Mølhave, Kristian; Larsen, K. F.

2010-01-01

Epitaxial growth of heterostructure nanowires allows for the definition of narrow sections with specific semiconductor composition. The authors demonstrate how postgrowth engineering of III-V heterostructure nanowires using selective etching can form gaps, sharpening of tips, and thin sections...... lithography is used for deposition of catalyst particles on trench sidewalls and the lateral growth of III-V nanowires is achieved from such catalysts. The selectivity of a bromine-based etch on gallium arsenide segments in gallium phosphide nanowires is examined, using a hydrochloride etch to remove the III...

Determination of interfacial states in solid heterostructures using a variable-energy positron beam

Science.gov (United States)

Asoka kumar, Palakkal P. V.; Lynn, Kelvin G.

1993-01-01

A method and means is provided for characterizing interfacial electron states in solid heterostructures using a variable energy positron beam to probe the solid heterostructure. The method includes the steps of directing a positron beam having a selected energy level at a point on the solid heterostructure so that the positron beam penetrates into the solid heterostructure and causes positrons to collide with the electrons at an interface of the solid heterostructure. The number and energy of gamma rays emitted from the solid heterostructure as a result of the annihilation of positrons with electrons at the interface are detected. The data is quantified as a function of the Doppler broadening of the photopeak about the 511 keV line created by the annihilation of the positrons and electrons at the interface, preferably, as an S-parameter function; and a normalized S-parameter function of the data is obtained. The function of data obtained is compared with a corresponding function of the Doppler broadening of the annihilation photopeak about 511 keV for a positron beam having a second energy level directed at the same material making up a portion of the solid heterostructure. The comparison of these functions facilitates characterization of the interfacial states of electrons in the solid heterostructure at points corresponding to the penetration of positrons having the particular energy levels into the interface of the solid heterostructure. Accordingly, the invention provides a variable-energy non-destructive probe of solid heterostructures, such as SiO.sub.2 /Si, MOS or other semiconductor devices.

Strong magnetization and Chern insulators in compressed graphene/CrI 3 van der Waals heterostructures

Science.gov (United States)

Zhang, Jiayong; Zhao, Bao; Zhou, Tong; Xue, Yang; Ma, Chunlan; Yang, Zhongqin

2018-02-01

Graphene-based heterostructures are a promising material system for designing the topologically nontrivial Chern insulating devices. Recently, a two-dimensional monolayer ferromagnetic insulator CrI3 was successfully synthesized in experiments [B. Huang et al., Nature (London) 546, 270 (2017), 10.1038/nature22391]. Here, these two interesting materials are proposed to build a heterostructure (Gr /CrI3). Our first-principles calculations show that the system forms a van der Waals (vdW) heterostructure, which is relatively facilely fabricated in experiments. A Chern insulating state is acquired in the Gr /CrI3 heterostructure if the vdW gap is compressed to a distance between about 3.3 and 2.4 Å, corresponding to a required external pressure between about 1.4 and 18.3 GPa. Amazingly, very strong magnetization (about 150 meV) is found in graphene, induced by the substrate CrI3, despite the vdW interactions between them. A low-energy effective model is employed to understand the mechanism. The work functions, contact types, and band alignments of the Gr /CrI3 heterostructure system are also studied. Our work demonstrates that the Gr /CrI3 heterostructure is a promising system to observe the quantum anomalous Hall effect at high temperatures (up to 45 K) in experiments.

Nanoparticle Stability in Axial InAs-InP Nanowire Heterostructures with Atomically Sharp Interfaces.

Science.gov (United States)

Zannier, Valentina; Rossi, Francesca; Dubrovskii, Vladimir G; Ercolani, Daniele; Battiato, Sergio; Sorba, Lucia

2018-01-10

The possibility to expand the range of material combinations in defect-free heterostructures is one of the main motivations for the great interest in semiconductor nanowires. However, most axial nanowire heterostructures suffer from interface compositional gradients and kink formation, as a consequence of nanoparticle-nanowire interactions during the metal-assisted growth. Understanding such interactions and how they affect the growth mode is fundamental to achieve a full control over the morphology and the properties of nanowire heterostructures for device applications. Here we demonstrate that the sole parameter affecting the growth mode (straight or kinked) of InP segments on InAs nanowire stems by the Au-assisted method is the nanoparticle composition. Indeed, straight InAs-InP nanowire heterostructures are obtained only when the In/Au ratio in the nanoparticles is low, typically smaller than 1.5. For higher In content, the InP segments tend to kink. Tailoring the In/Au ratio by the precursor fluxes at a fixed growth temperature enables us to obtain straight and radius-uniform InAs-InP nanowire heterostructures (single and double) with atomically sharp interfaces. We present a model that is capable of describing all the experimentally observed phenomena: straight growth versus kinking, the stationary nanoparticle compositions in pure InAs and InAs-InP nanowires, the crystal phase trends, and the interfacial abruptness. By taking into account different nanowire/nanoparticle interfacial configurations (forming wetting or nonwetting monolayers in vertical or tapered geometry), our generalized model provides the conditions of nanoparticle stability and abrupt heterointerfaces for a rich variety of growth scenarios. Therefore, our results provide a powerful tool for obtaining high quality InAs-InP nanowire heterostructures with well-controlled properties and can be extended to other material combinations based on the group V interchange.

Emerging Low-Dimensional Materials for Nonlinear Optics and Ultrafast Photonics.

Science.gov (United States)

Liu, Xiaofeng; Guo, Qiangbing; Qiu, Jianrong

2017-04-01

Low-dimensional (LD) materials demonstrate intriguing optical properties, which lead to applications in diverse fields, such as photonics, biomedicine and energy. Due to modulation of electronic structure by the reduced structural dimensionality, LD versions of metal, semiconductor and topological insulators (TIs) at the same time bear distinct nonlinear optical (NLO) properties as compared with their bulk counterparts. Their interaction with short pulse laser excitation exhibits a strong nonlinear character manifested by NLO absorption, giving rise to optical limiting or saturated absorption associated with excited state absorption and Pauli blocking in different materials. In particular, the saturable absorption of these emerging LD materials including two-dimensional semiconductors as well as colloidal TI nanoparticles has recently been utilized for Q-switching and mode-locking ultra-short pulse generation across the visible, near infrared and middle infrared wavelength regions. Beside the large operation bandwidth, these ultrafast photonics applications are especially benefit from the high recovery rate as well as the facile processibility of these LD materials. The prominent NLO response of these LD materials have also provided new avenues for the development of novel NLO and photonics devices for all-optical control as well as optical circuits beyond ultrafast lasers. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Application of kinetic flux vector splitting scheme for solving multi-dimensional hydrodynamical models of semiconductor devices

Science.gov (United States)

Nisar, Ubaid Ahmed; Ashraf, Waqas; Qamar, Shamsul

In this article, one and two-dimensional hydrodynamical models of semiconductor devices are numerically investigated. The models treat the propagation of electrons in a semiconductor device as the flow of a charged compressible fluid. It plays an important role in predicting the behavior of electron flow in semiconductor devices. Mathematically, the governing equations form a convection-diffusion type system with a right hand side describing the relaxation effects and interaction with a self consistent electric field. The proposed numerical scheme is a splitting scheme based on the kinetic flux-vector splitting (KFVS) method for the hyperbolic step, and a semi-implicit Runge-Kutta method for the relaxation step. The KFVS method is based on the direct splitting of macroscopic flux functions of the system on the cell interfaces. The second order accuracy of the scheme is achieved by using MUSCL-type initial reconstruction and Runge-Kutta time stepping method. Several case studies are considered. For validation, the results of current scheme are compared with those obtained from the splitting scheme based on the NT central scheme. The effects of various parameters such as low field mobility, device length, lattice temperature and voltage are analyzed. The accuracy, efficiency and simplicity of the proposed KFVS scheme validates its generic applicability to the given model equations. A two dimensional simulation is also performed by KFVS method for a MESFET device, producing results in good agreement with those obtained by NT-central scheme.

In-plane heterostructures of graphene and hexagonal boron nitride with controlled domain sizes

Science.gov (United States)

Liu, Zheng; Ma, Lulu; Shi, Gang; Zhou, Wu; Gong, Yongji; Lei, Sidong; Yang, Xuebei; Zhang, Jiangnan; Yu, Jingjiang; Hackenberg, Ken P.; Babakhani, Aydin; Idrobo, Juan-Carlos; Vajtai, Robert; Lou, Jun; Ajayan, Pulickel M.

2013-02-01

Graphene and hexagonal boron nitride (h-BN) have similar crystal structures with a lattice constant difference of only 2%. However, graphene is a zero-bandgap semiconductor with remarkably high carrier mobility at room temperature, whereas an atomically thin layer of h-BN is a dielectric with a wide bandgap of ~5.9 eV. Accordingly, if precise two-dimensional domains of graphene and h-BN can be seamlessly stitched together, hybrid atomic layers with interesting electronic applications could be created. Here, we show that planar graphene/h-BN heterostructures can be formed by growing graphene in lithographically patterned h-BN atomic layers. Our approach can create periodic arrangements of domains with size ranging from tens of nanometres to millimetres. The resulting graphene/h-BN atomic layers can be peeled off the growth substrate and transferred to various platforms including flexible substrates. We also show that the technique can be used to fabricate two-dimensional devices, such as a split closed-loop resonator that works as a bandpass filter.

Photocatalytic activity of Ag3PO4 nanoparticle/TiO2 nanobelt heterostructures

Science.gov (United States)

Liu, Ruoyu; Hu, Peiguang; Chen, Shaowei

2012-10-01

Heterostructures based on Ag3PO4 nanoparticles and TiO2 nanobelts were prepared by a coprecipitation method. The crystalline structures were characterized by X-ray diffraction measurements. Electron microscopic studies showed that the Ag3PO4 nanoparticles and TiO2 nanobelts were in intimate contact which might be exploited to facilitate charge transfer between the two semiconductor materials. In fact, the heterostructures exhibited markedly enhanced photocatalytic activity as compared with unmodified TiO2 nanobelts or commercial TiO2 colloids in the photodegradation of methyl orange under UV irradiation. This was accounted for by the improved efficiency of interfacial charge separation thanks to the unique alignments of their band structures. Remarkably, whereas the photocatalytic activity of the heterostructure was comparable to that of Ag3PO4 nanoparticles alone, the heterostructures exhibited significantly better stability and reusability in repeated tests than the Ag3PO4 nanoparticles.

A Ge/Si heterostructure nanowire-based double quantum dot with integrated charge sensor

DEFF Research Database (Denmark)

Hu, Yongjie; Churchill, Hugh; Reilly, David

2007-01-01

Coupled electron spins in semiconductor double quantum dots hold promise as the basis for solid-state qubits. To date, most experiments have used III-V materials, in which coherence is limited by hyperfine interactions. Ge/Si heterostructure nanowires seem ideally suited to overcome this limitati...

Centimetre-scale electron diffusion in photoactive organic heterostructures

Science.gov (United States)

Burlingame, Quinn; Coburn, Caleb; Che, Xiaozhou; Panda, Anurag; Qu, Yue; Forrest, Stephen R.

2018-02-01

The unique properties of organic semiconductors, such as flexibility and lightness, are increasingly important for information displays, lighting and energy generation. But organics suffer from both static and dynamic disorder, and this can lead to variable-range carrier hopping, which results in notoriously poor electrical properties, with low electron and hole mobilities and correspondingly short charge-diffusion lengths of less than a micrometre. Here we demonstrate a photoactive (light-responsive) organic heterostructure comprising a thin fullerene channel sandwiched between an electron-blocking layer and a blended donor:C70 fullerene heterojunction that generates charges by dissociating excitons. Centimetre-scale diffusion of electrons is observed in the fullerene channel, and this can be fitted with a simple electron diffusion model. Our experiments enable the direct measurement of charge diffusivity in organic semiconductors, which is as high as 0.83 ± 0.07 square centimetres per second in a C60 channel at room temperature. The high diffusivity of the fullerene combined with the extraordinarily long charge-recombination time yields diffusion lengths of more than 3.5 centimetres, orders of magnitude larger than expected for an organic system.

Omnidirectional reflection in one-dimensional ternary photonic crystals and photonic heterostructures

Energy Technology Data Exchange (ETDEWEB)

Wang, Shiqi [MOE Key Laboratory of Laser Life Science and Institute of Laser Life Science, College of Biophotonics, South China Normal University, Guangzhou 510631 (China); Yang, Xiangbo, E-mail: 20001038@m.scnu.edu.cn [MOE Key Laboratory of Laser Life Science and Institute of Laser Life Science, College of Biophotonics, South China Normal University, Guangzhou 510631 (China); School of Physical Education and Sports Science, South China Normal University, Guangzhou 510006 (China); Liu, Chengyi Timon [School of Physical Education and Sports Science, South China Normal University, Guangzhou 510006 (China)

2014-03-01

Designing dielectric systems to create omnidirectional band gaps (OBGs) is an attractive topic in the field of photonic band gap (PBG) structures. In this Letter, we propose a new approach to create OBGs by ternary photonic heterostructures (TPHs) composed of three kinds of materials with different refractive indices and obtain the formulae of the structures of TPHs, i.e., those of the thicknesses of materials and the number of sub-ternary photonic crystals. It may provide a powerful technique for designing the structures being able to produce OBGs by use of usual materials, lowcost materials, and materials with low refractive indices, etc.

Omnidirectional reflection in one-dimensional ternary photonic crystals and photonic heterostructures

International Nuclear Information System (INIS)

Wang, Shiqi; Yang, Xiangbo; Liu, Chengyi Timon

2014-01-01

Designing dielectric systems to create omnidirectional band gaps (OBGs) is an attractive topic in the field of photonic band gap (PBG) structures. In this Letter, we propose a new approach to create OBGs by ternary photonic heterostructures (TPHs) composed of three kinds of materials with different refractive indices and obtain the formulae of the structures of TPHs, i.e., those of the thicknesses of materials and the number of sub-ternary photonic crystals. It may provide a powerful technique for designing the structures being able to produce OBGs by use of usual materials, lowcost materials, and materials with low refractive indices, etc.

Voltage manipulation of the magnetization reversal in Fe/n-GaAs/piezoelectric heterostructure

International Nuclear Information System (INIS)

Li, Yuanyuan; Luo, Wengang; Zhu, Lijun; Zhao, Jianhua; Wang, Kaiyou

2015-01-01

We carefully investigated the in-plane magnetization reversal and corresponding magnetic domain structures in Fe/n-GaAs/piezoelectric heterostructure using longitudinal magneto-optical Kerr microscopy. The coexistence of the in-plane <100> cubic and [11 ¯ 0] uniaxial magnetic anisotropy was observed in this system at virgin state. The piezo voltages can effectively manipulate the magnetic properties of the Fe/n-GaAs/piezoelectric heterostructure, where the manipulation of two-jump to one-jump magnetization switching during the magnetic reversal was achieved with magnetic field applied in [100] direction. Our findings on manipulation of ferromagnetization in this heterostructure could be important for future metal-semiconductor spintronic applications. The additional uniaxial anisotropy induced by piezo voltages obtained at ±75 V is ±1.4×10 3 J/m 3 . - Highlights: • In this work, we use piezo voltages not only realize the significant change of coercivity but also effectively manipulate the magnetization transition from one step to two steps during magnetic reversal, indicating that the piezo-voltages can be used to effectively control the magnetization reversal. • The additional uniaxial anisotropy induced by piezo voltages at +/−75 V are +/−1.4×10 3 J/m 3 . This work could be very used for future metal-semiconductor spintronic devices

Two-dimensional electron and hole gases in GaN/AlGaN heterostructures; Zweidimensionale Elektronen- und Loechergase in GaN/AlGaN-Heterostrukturen

Energy Technology Data Exchange (ETDEWEB)

Link, A.

2004-12-01

The aim of this PhD thesis is to investigate the electronic properties of electron and hole gases in GaN/AlGaN heterostructures. Particularly, a deeper and broadened understanding of scattering mechanisms and transport properties is in the focus of this work. The main experimental techniques used for this purpose are the study of Shubnikov-de Haas (SdH) effect and Hall measurements at low temperatures. By means of these magnetotransport measurements, a series of GaN/AlGaN heterostructures with different Al content of the AlGaN barrier were investigated. Since the sheet carrier density of the 2DEG in these semiconductor structures is strongly dependent on the Al content (n{sub s}=2 x 10{sup 12}-10{sup 13} cm{sup -2}), the variation of transport parameters was determined as a function of sheet carrier concentration. First, from the temperature dependence of the SdH oscillations the effective transport mass was calculated. A Hall bar structure with an additional gate contact was used as an alternative to tune the carrier density of a 2DEG system independent of varying structural parametes such as Al content. Thus, the scattering mechanisms were investigated in the carrier density region between 3 x 10{sup 12} and 9.5 x 10{sup 12} cm{sup -2}. The transport properties of subband electrons were studied for a 2DEG system with two occupied subbands. (orig.)

Ballistic-electron-emission spectroscopy of AlxGa1-xAs/GaAs heterostructures: Conduction-band offsets, transport mechanisms, and band-structure effects

International Nuclear Information System (INIS)

OShea, J.J.; Brazel, E.G.; Rubin, M.E.; Bhargava, S.; Chin, M.A.; Narayanamurti, V.

1997-01-01

We report an extensive investigation of semiconductor band-structure effects in single-barrier Al x Ga 1-x As/GaAs heterostructures using ballistic-electron-emission spectroscopy (BEES). The transport mechanisms in these single-barrier structures were studied systematically as a function of temperature and Al composition over the full compositional range (0≤x≤1). The initial (Γ) BEES thresholds for Al x Ga 1-x As single barriers with 0≤x≤0.42 were extracted using a model which includes the complete transmission probability of the metal-semiconductor interface and the semiconductor heterostructure. Band offsets measured by BEES are in good agreement with previous measurements by other techniques which demonstrates the accuracy of this technique. BEES measurements at 77 K give the same band-offset values as at room temperature. When a reverse bias is applied to the heterostructures, the BEES thresholds shift to lower voltages in good agreement with the expected bias-induced band-bending. In the indirect band-gap regime (x>0.45), spectra show a weak ballistic-electron-emission microscopy current contribution due to intervalley scattering through Al x Ga 1-x As X valley states. Low-temperature spectra show a marked reduction in this intervalley current component, indicating that intervalley phonon scattering at the GaAs/Al x Ga 1-x As interface produces a significant fraction of thisX valley current. A comparison of the BEES thresholds with the expected composition dependence of the Al x Ga 1-x As Γ, L, and X points yields good agreement over the entire composition range. copyright 1997 The American Physical Society

Unidirectional Wave Propagation in Low-Symmetric Colloidal Photonic-Crystal Heterostructures

Directory of Open Access Journals (Sweden)

Vassilios Yannopapas

2015-03-01

Full Text Available We show theoretically that photonic crystals consisting of colloidal spheres exhibit unidirectional wave propagation and one-way frequency band gaps without breaking time-reversal symmetry via, e.g., the application of an external magnetic field or the use of nonlinear materials. Namely, photonic crystals with low symmetry such as the monoclinic crystal type considered here as well as with unit cells formed by the heterostructure of different photonic crystals show significant unidirectional electromagnetic response. In particular, we show that the use of scatterers with low refractive-index contrast favors the formation of unidirectional frequency gaps which is the optimal route for achieving unidirectional wave propagation.

Unidirectional Wave Propagation in Low-Symmetric Colloidal Photonic-Crystal Heterostructures.

Science.gov (United States)

Yannopapas, Vassilios

2015-03-19

We show theoretically that photonic crystals consisting of colloidal spheres exhibit unidirectional wave propagation and one-way frequency band gaps without breaking time-reversal symmetry via, e.g., the application of an external magnetic field or the use of nonlinear materials. Namely, photonic crystals with low symmetry such as the monoclinic crystal type considered here as well as with unit cells formed by the heterostructure of different photonic crystals show significant unidirectional electromagnetic response. In particular, we show that the use of scatterers with low refractive-index contrast favors the formation of unidirectional frequency gaps which is the optimal route for achieving unidirectional wave propagation.

Spin-orbit torque in a three-dimensional topological insulator–ferromagnet heterostructure: Crossover between bulk and surface transport

KAUST Repository

Ghosh, Sumit; Manchon, Aurelien

2018-01-01

Current-driven spin-orbit torques are investigated in a heterostructure composed of a ferromagnet deposited on top of a three-dimensional topological insulator using the linear response formalism. We develop a tight-binding model of the heterostructure adopting a minimal interfacial hybridization scheme that promotes induced magnetic exchange on the topological surface states, as well as induced Rashba-like spin-orbit coupling in the ferromagnet. Therefore our model accounts for the spin Hall effect from bulk states together with inverse spin galvanic and magnetoelectric effects at the interface on equal footing. By varying the transport energy across the band structure, we uncover a crossover from surface-dominated to bulk-dominated transport regimes. We show that the spin density profile and the nature of the spin-orbit torques differ substantially in both regimes. Our results, which compare favorably with experimental observations, demonstrate that the large dampinglike torque reported recently is more likely attributed to the Berry curvature of interfacial states, while spin Hall torque remains small even in the bulk-dominated regime.

Spin-orbit torque in a three-dimensional topological insulator–ferromagnet heterostructure: Crossover between bulk and surface transport

KAUST Repository

Ghosh, Sumit

2018-04-02

Current-driven spin-orbit torques are investigated in a heterostructure composed of a ferromagnet deposited on top of a three-dimensional topological insulator using the linear response formalism. We develop a tight-binding model of the heterostructure adopting a minimal interfacial hybridization scheme that promotes induced magnetic exchange on the topological surface states, as well as induced Rashba-like spin-orbit coupling in the ferromagnet. Therefore our model accounts for the spin Hall effect from bulk states together with inverse spin galvanic and magnetoelectric effects at the interface on equal footing. By varying the transport energy across the band structure, we uncover a crossover from surface-dominated to bulk-dominated transport regimes. We show that the spin density profile and the nature of the spin-orbit torques differ substantially in both regimes. Our results, which compare favorably with experimental observations, demonstrate that the large dampinglike torque reported recently is more likely attributed to the Berry curvature of interfacial states, while spin Hall torque remains small even in the bulk-dominated regime.

Prediction of two-dimensional diluted magnetic semiconductors: Doped monolayer MoS2 systems

KAUST Repository

Cheng, Yingchun; Guo, Z. B.; Mi, W. B.; Schwingenschlö gl, Udo; Zhu, Zhiyong

2013-01-01

Using first-principles calculations, we propose a two-dimensional diluted magnetic semiconductor: monolayer MoS2 doped by transition metals. Doping of transition metal atoms from the IIIB to VIB groups results in nonmagnetic states, since the number

Low frequency phononic band structures in two-dimensional arc-shaped phononic crystals

International Nuclear Information System (INIS)

Xu, Zhenlong; Wu, Fugen; Guo, Zhongning

2012-01-01

The low frequency phononic band structures of two-dimensional arc-shaped phononic crystals (APCs) were studied by the transfer matrix method in cylindrical coordinates. The results showed the first phononic band gaps (PBGs) of APCs from zero Hz with low modes. Locally resonant (LR) gaps were obtained with higher-order rotation symmetry, due to LR frequencies corresponding to the speeds of acoustic waves in the materials. These properties can be efficiently used in a structure for low frequencies that are forbidden, or in a device that permits a narrow window of frequencies. -- Highlights: ► We report a new class of quasi-periodic hetero-structures, arc-shaped phononic crystals (APCs). ► The results show the first PBGs start with zero Hz with low modes. ► Locally resonant (LR) gaps were obtained with higher-order rotation symmetry, due to LR frequencies corresponding to the speeds of acoustic waves in the materials.

Ferromagnetism in diluted magnetic semiconductor heterojunction systems

Czech Academy of Sciences Publication Activity Database

Lee, B.; Jungwirth, Tomáš; MacDonald, A. H.

2002-01-01

Roč. 17, - (2002), s. 393-403 ISSN 0268-1242 R&D Projects: GA ČR GA202/98/0085; GA MŠk OC P5.10 Institutional research plan: CEZ:AV0Z1010914 Keywords : ferromagnetic semiconductors * heterostructures Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.241, year: 2002

Imaging the motion of electrons across semiconductor heterojunctions

Science.gov (United States)

Man, Michael K. L.; Margiolakis, Athanasios; Deckoff-Jones, Skylar; Harada, Takaaki; Wong, E. Laine; Krishna, M. Bala Murali; Madéo, Julien; Winchester, Andrew; Lei, Sidong; Vajtai, Robert; Ajayan, Pulickel M.; Dani, Keshav M.

2017-01-01

Technological progress since the late twentieth century has centred on semiconductor devices, such as transistors, diodes and solar cells. At the heart of these devices is the internal motion of electrons through semiconductor materials due to applied electric fields or by the excitation of photocarriers. Imaging the motion of these electrons would provide unprecedented insight into this important phenomenon, but requires high spatial and temporal resolution. Current studies of electron dynamics in semiconductors are generally limited by the spatial resolution of optical probes, or by the temporal resolution of electronic probes. Here, by combining femtosecond pump-probe techniques with spectroscopic photoemission electron microscopy, we imaged the motion of photoexcited electrons from high-energy to low-energy states in a type-II 2D InSe/GaAs heterostructure. At the instant of photoexcitation, energy-resolved photoelectron images revealed a highly non-equilibrium distribution of photocarriers in space and energy. Thereafter, in response to the out-of-equilibrium photocarriers, we observed the spatial redistribution of charges, thus forming internal electric fields, bending the semiconductor bands, and finally impeding further charge transfer. By assembling images taken at different time-delays, we produced a movie lasting a few trillionths of a second of the electron-transfer process in the photoexcited type-II heterostructure—a fundamental phenomenon in semiconductor devices such as solar cells. Quantitative analysis and theoretical modelling of spatial variations in the movie provide insight into future solar cells, 2D materials and other semiconductor devices.

Photoelectrochemical-type sunlight photodetector based on MoS2/graphene heterostructure

International Nuclear Information System (INIS)

Huang, Zongyu; Han, Weijia; Chander, D Sathish; Qi, Xiang; Zhang, Han; Tang, Hongli; Ren, Long

2015-01-01

We have fabricated a novel sunlight photo-detector based on a MoS 2 /graphene heterostructure. The MoS 2 /graphene heterostructure was prepared by a facile hydrothermal method along with a subsequent annealing process followed by a substrate-induced high selective nucleation and growth mechanism. The microstructures and morphologies of the two-dimensional MoS 2 /graphene heterostructure can be experimentally confirmed by x-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), transmission electron microscopy (TEM) and a UV–vis absorption spectrometer. Photoresponse investigations performed by a photoelectrochemical (PEC) measurement system indicate that the synthesized MoS 2 /graphene heterostructure shows superior photoresponse activities under the illumination of sunlight in contrast with bare MoS 2 and graphene. The improved photoresponsivity can be attributed to the enhanced light absorption, strong light–matter interaction and the extremely efficient charge separation of the heterostructure. The structure and performances of the MoS 2 /graphene heterostructure suggest promising applications in the field of photonics and optoelectronics. (paper)

Many-particle theory of optical properties in low-dimensional nanostructures. Dynamics in single-walled carbon nanotubes and semiconductor quantum dots

Energy Technology Data Exchange (ETDEWEB)

Malic, Ermin

2008-09-02

This work focuses on the theoretical investigation of optical properties of low-dimensional nanostructures, specifically single-walled carbon nanotubes (CNTs) and self-assembled InAs/GaAs quantum dots (QDs). The density-matrix formalism is applied to explain recent experimental results and to give insight into the underlying physics. A microscopic calculation of the absorption coefficient and the Rayleigh scattering cross section is performed by a novel approach combining the density-matrix formalism with the tight-binding wave functions. The calculated spectra of metallic nanotubes show a double-peaked structure resulting from the trigonal warping effect. The intensity ratios of the four lowest-lying transitions in both absorption and Rayleigh spectra can be explained by the different behavior of the optical matrix elements along the high-symmetry lines K-{gamma} and K-M. The Rayleigh line shape is predicted to be asymmetric, with an enhanced cross section for lower photon energies arising from non-resonant contributions of the optical susceptibility. Furthermore, the Coulomb interaction is shown to be maximal when the momentum transfer is low. For intersubband processes with a perpendicular momentum transfer, the coupling strength is reduced to less than 5%. The chirality and diameter dependence of the excitonic binding energy and the transition frequency are presented in Kataura plots. Furthermore, the influence of the surrounding environment on the optical properties of CNTs is investigated. Extending the confinement to all three spatial dimensions, semiconductor Bloch equation are derived to describe the dynamics in QD semiconductor lasers and amplifiers. A detailed microscopic analysis of the nonlinear turn-on dynamics of electrically pumped InAs/GaAs QD lasers is performed, showing the generation of relaxation oscillations on a nanosecond time scale in both the photon and charge carrier density. The theory predicts a strong damping of relaxation oscillations

Many-particle theory of optical properties in low-dimensional nanostructures. Dynamics in single-walled carbon nanotubes and semiconductor quantum dots

International Nuclear Information System (INIS)

Malic, Ermin

2008-01-01

This work focuses on the theoretical investigation of optical properties of low-dimensional nanostructures, specifically single-walled carbon nanotubes (CNTs) and self-assembled InAs/GaAs quantum dots (QDs). The density-matrix formalism is applied to explain recent experimental results and to give insight into the underlying physics. A microscopic calculation of the absorption coefficient and the Rayleigh scattering cross section is performed by a novel approach combining the density-matrix formalism with the tight-binding wave functions. The calculated spectra of metallic nanotubes show a double-peaked structure resulting from the trigonal warping effect. The intensity ratios of the four lowest-lying transitions in both absorption and Rayleigh spectra can be explained by the different behavior of the optical matrix elements along the high-symmetry lines K-Γ and K-M. The Rayleigh line shape is predicted to be asymmetric, with an enhanced cross section for lower photon energies arising from non-resonant contributions of the optical susceptibility. Furthermore, the Coulomb interaction is shown to be maximal when the momentum transfer is low. For intersubband processes with a perpendicular momentum transfer, the coupling strength is reduced to less than 5%. The chirality and diameter dependence of the excitonic binding energy and the transition frequency are presented in Kataura plots. Furthermore, the influence of the surrounding environment on the optical properties of CNTs is investigated. Extending the confinement to all three spatial dimensions, semiconductor Bloch equation are derived to describe the dynamics in QD semiconductor lasers and amplifiers. A detailed microscopic analysis of the nonlinear turn-on dynamics of electrically pumped InAs/GaAs QD lasers is performed, showing the generation of relaxation oscillations on a nanosecond time scale in both the photon and charge carrier density. The theory predicts a strong damping of relaxation oscillations

Novel phase diagram behavior and materials design in heterostructural semiconductor alloys.

Science.gov (United States)

Holder, Aaron M; Siol, Sebastian; Ndione, Paul F; Peng, Haowei; Deml, Ann M; Matthews, Bethany E; Schelhas, Laura T; Toney, Michael F; Gordon, Roy G; Tumas, William; Perkins, John D; Ginley, David S; Gorman, Brian P; Tate, Janet; Zakutayev, Andriy; Lany, Stephan

2017-06-01

Structure and composition control the behavior of materials. Isostructural alloying is historically an extremely successful approach for tuning materials properties, but it is often limited by binodal and spinodal decomposition, which correspond to the thermodynamic solubility limit and the stability against composition fluctuations, respectively. We show that heterostructural alloys can exhibit a markedly increased range of metastable alloy compositions between the binodal and spinodal lines, thereby opening up a vast phase space for novel homogeneous single-phase alloys. We distinguish two types of heterostructural alloys, that is, those between commensurate and incommensurate phases. Because of the structural transition around the critical composition, the properties change in a highly nonlinear or even discontinuous fashion, providing a mechanism for materials design that does not exist in conventional isostructural alloys. The novel phase diagram behavior follows from standard alloy models using mixing enthalpies from first-principles calculations. Thin-film deposition demonstrates the viability of the synthesis of these metastable single-phase domains and validates the computationally predicted phase separation mechanism above the upper temperature bound of the nonequilibrium single-phase region.

Effects of plasma-induced defects on electrical characteristics of AlGaN/GaN heterostructure before and after low-temperature annealing

International Nuclear Information System (INIS)

Takimoto, Takuma; Takeshita, Koji; Nakamura, Seiji; Okumura, Tsugunori

2014-01-01

We investigated the electrical characteristics of an AlGaN/GaN heterostructure exposed to Ar plasma. In the near-surface region of the AlGaN/GaN heterostructure, we found that plasma-induced defects reduced the two-dimensional electron gas (2DEG) density and mobility at the AlGaN/GaN interface with increasing exposure time. The decrease in 2DEG density suggests that plasma-induced disordering partly extinguishes the piezo-polarization of the AlGaN layer, that the effective Schottky barrier height is increased by the introduction of negatively changed defects, or that the negatively charged defects induced during plasma exposure deactivate or compensate Si donors. In addition, we investigated the postannealing behavior of plasma-induced defects in the AlGaN/GaN heterostructure as well as in the n-GaN layer under an applied bias voltage. - Highlights: • We have investigated the electrical characteristics of the AlGaN/GaN heterostructure. • Electrons under the AlGaN/GaN interface are decreased by plasma exposure. • Post-annealing treatment with gate bias recovers the degradation caused by defects

Multilayer Graphene–WSe2 Heterostructures for WSe2 Transistors

KAUST Repository

Tang, Hao-Ling

2017-11-29

Two-dimensional (2D) materials are drawing growing attention for next-generation electronics and optoelectronics owing to its atomic thickness and unique physical properties. One of the challenges posed by 2D materials is the large source/drain (S/D) series resistance due to their thinness, which may be resolved by thickening the source and drain regions. Recently explored lateral graphene–MoS21−3 and graphene–WS21,4 heterostructures shed light on resolving the mentioned issues owing to their superior ohmic contact behaviors. However, recently reported field-effect transistors (FETs) based on graphene–TMD heterostructures have only shown n-type characteristics. The lack of p-type transistor limits their applications in complementary metal-oxide semiconductor electronics. In this work, we demonstrate p-type FETs based on graphene–WSe2 lateral heterojunctions grown with the scalable CVD technique. Few-layer WSe2 is overlapped with the multilayer graphene (MLG) at MLG–WSe2 junctions such that the contact resistance is reduced. Importantly, the few-layer WSe2 only forms at the junction region while the channel is still maintained as a WSe2 monolayer for transistor operation. Furthermore, by imposing doping to graphene S/D, 2 orders of magnitude enhancement in Ion/Ioff ratio to ∼108 and the unipolar p-type characteristics are obtained regardless of the work function of the metal in ambient air condition. The MLG is proposed to serve as a 2D version of emerging raised source/drain approach in electronics.

Band Alignment Determination of Two-Dimensional Heterojunctions and Their Electronic Applications

KAUST Repository

Chiu, Ming-Hui

2018-05-09

Two-dimensional (2D) layered materials such as MoS2 have been recognized as high on-off ratio semiconductors which are promising candidates for electronic and optoelectronic devices. In addition to the use of individual 2D materials, the accelerated field of 2D heterostructures enables even greater functionalities. Device designs differ, and they are strongly controlled by the electronic band alignment. For example, photovoltaic cells require type II heterostructures for light harvesting, and light-emitting diodes benefit from multiple quantum wells with the type I band alignment for high emission efficiency. The vertical tunneling field-effect transistor for next-generation electronics depends on nearly broken-gap band alignment for boosting its performance. To tailor these 2D layered materials toward possible future applications, the understanding of 2D heterostructure band alignment becomes critically important. In the first part of this thesis, we discuss the band alignment of 2D heterostructures. To do so, we firstly study the interlayer coupling between two dissimilar 2D materials. We conclude that a post-anneal process could enhance the interlayer coupling of as-transferred 2D heterostructures, and heterostructural stacking imposes similar symmetry changes as homostructural stacking. Later, we precisely determine the quasi particle bandgap and band alignment of the MoS2/WSe2 heterostructure by using scan tunneling microscopy/spectroscopy (STM/S) and micron-beam X-ray photoelectron spectroscopy (μ-XPS) techniques. Lastly, we prove that the band alignment of 2D heterojunctions can be accurately predicted by Anderson’s model, which has previously failed to predict conventional bulk heterostructures. In the second part of this thesis, we develop a new Chemical Vapor Deposition (CVD) method capable of precisely controlling the growth area of p- and n-type transition metal dichalcogenides (TMDCs) and further form lateral or vertical 2D heterostructures. This

Probing carrier dynamics of individual layers in a heterostructure using transient reflectivity

Energy Technology Data Exchange (ETDEWEB)

Khan, Salahuddin; Jayabalan, J., E-mail: jjaya@rrcat.gov.in; Singh, Asha; Yogi, Rachana; Chari, Rama [Laser Physics Applications Section, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India)

2015-09-21

We report the wavelength dependent transient reflectivity measurements in AlGaAs-GaAs heterostructures having two-dimensional electron (or hole) gas near the interface. Using a multilayer model for transient reflectivity, we show that the magnitude and sign of contributions from the carriers in two-dimensional electron (or hole) gas and GaAs to the total signal depends on the wavelength. Further, it has been shown that it is possible to study the carrier dynamics in a given layer of a heterostructure by performing transient reflectivity at specific wavelengths.

Probing carrier dynamics of individual layers in a heterostructure using transient reflectivity

International Nuclear Information System (INIS)

Khan, Salahuddin; Jayabalan, J.; Singh, Asha; Yogi, Rachana; Chari, Rama

2015-01-01

We report the wavelength dependent transient reflectivity measurements in AlGaAs-GaAs heterostructures having two-dimensional electron (or hole) gas near the interface. Using a multilayer model for transient reflectivity, we show that the magnitude and sign of contributions from the carriers in two-dimensional electron (or hole) gas and GaAs to the total signal depends on the wavelength. Further, it has been shown that it is possible to study the carrier dynamics in a given layer of a heterostructure by performing transient reflectivity at specific wavelengths

GaAs-based micro/nanomechanical resonators

Science.gov (United States)

Yamaguchi, Hiroshi

2017-10-01

Micro/nanomechanical resonators have been extensively studied both for device applications, such as high-performance sensors and high-frequency devices, and for fundamental science, such as quantum physics in macroscopic objects. The advantages of GaAs-based semiconductor heterostructures include improved mechanical properties through strain engineering, highly controllable piezoelectric transduction, carrier-mediated optomechanical coupling, and hybridization with quantum low-dimensional structures. This article reviews our recent activities, as well as those of other groups, on the physics and applications of mechanical resonators fabricated using GaAs-based heterostructures.

III - V semiconductor structures for biosensor and molecular electronics applications

Energy Technology Data Exchange (ETDEWEB)

Luber, S M

2007-01-15

The present work reports on the employment of III-V semiconductor structures to biosensor and molecular electronics applications. In the first part a sensor based on a surface-near two dimensional electron gas for a use in biological environment is studied. Such a two dimensional electron gas inherently forms in a molecular beam epitaxy (MBE) grown, doped aluminum gallium arsenide - gallium arsenide (AlGaAs-GaAs) heterostructure. Due to the intrinsic instability of GaAs in aqueous solutions the device is passivated by deposition of a monolayer of 4'-substituted mercaptobiphenyl molecules. The influence of these molecules which bind to the GaAs via a sulfur group is investigated by Kelvin probe measurements in air. They reveal a dependence of GaAs electron affinity on the intrinsic molecular dipole moment of the mercaptobiphenyls. Furthermore, transient surface photovoltage measurements are presented which demonstrate an additional influence of mercaptobiphenyl chemisorption on surface carrier recombination rates. As a next step, the influence of pH-value and salt concentration upon the sensor device is discussed based on the results obtained from sensor conductance measurements in physiological solutions. A dependence of the device surface potential on both parameters due to surface charging is deduced. Model calculations applying Poisson-Boltzmann theory reveal as possible surface charging mechanisms either the adsorption of OH- ions on the surface, or the dissociation of OH groups in surface oxides. A comparison between simulation settings and physical device properties indicate the OH- adsorption as the most probable mechanism. In the second part of the present study the suitability of MBE grown III-V semiconductor structures for molecular electronics applications is examined. In doing so, a method to fabricate nanometer separated, coplanar, metallic electrodes based on the cleavage of a supporting AlGaAs-GaAs heterostructure is presented. This is followed by a

III - V semiconductor structures for biosensor and molecular electronics applications

Energy Technology Data Exchange (ETDEWEB)

Luber, S.M.

2007-01-15

The present work reports on the employment of III-V semiconductor structures to biosensor and molecular electronics applications. In the first part a sensor based on a surface-near two dimensional electron gas for a use in biological environment is studied. Such a two dimensional electron gas inherently forms in a molecular beam epitaxy (MBE) grown, doped aluminum gallium arsenide - gallium arsenide (AlGaAs-GaAs) heterostructure. Due to the intrinsic instability of GaAs in aqueous solutions the device is passivated by deposition of a monolayer of 4'-substituted mercaptobiphenyl molecules. The influence of these molecules which bind to the GaAs via a sulfur group is investigated by Kelvin probe measurements in air. They reveal a dependence of GaAs electron affinity on the intrinsic molecular dipole moment of the mercaptobiphenyls. Furthermore, transient surface photovoltage measurements are presented which demonstrate an additional influence of mercaptobiphenyl chemisorption on surface carrier recombination rates. As a next step, the influence of pH-value and salt concentration upon the sensor device is discussed based on the results obtained from sensor conductance measurements in physiological solutions. A dependence of the device surface potential on both parameters due to surface charging is deduced. Model calculations applying Poisson-Boltzmann theory reveal as possible surface charging mechanisms either the adsorption of OH- ions on the surface, or the dissociation of OH groups in surface oxides. A comparison between simulation settings and physical device properties indicate the OH- adsorption as the most probable mechanism. In the second part of the present study the suitability of MBE grown III-V semiconductor structures for molecular electronics applications is examined. In doing so, a method to fabricate nanometer separated, coplanar, metallic electrodes based on the cleavage of a supporting AlGaAs-GaAs heterostructure is presented. This is followed

Theory of thermionic emission from a two-dimensional conductor and its application to a graphene-semiconductor Schottky junction

Science.gov (United States)

Trushin, Maxim

2018-04-01

The standard theory of thermionic emission developed for three-dimensional semiconductors does not apply to two-dimensional materials even for making qualitative predictions because of the vanishing out-of-plane quasiparticle velocity. This study reveals the fundamental origin of the out-of-plane charge carrier motion in a two-dimensional conductor due to the finite quasiparticle lifetime and huge uncertainty of the out-of-plane momentum. The theory is applied to a Schottky junction between graphene and a bulk semiconductor to derive a thermionic constant, which, in contrast to the conventional Richardson constant, is determined by the Schottky barrier height and Fermi level in graphene.

Voltage manipulation of the magnetization reversal in Fe/n-GaAs/piezoelectric heterostructure

Energy Technology Data Exchange (ETDEWEB)

Li, Yuanyuan; Luo, Wengang; Zhu, Lijun; Zhao, Jianhua; Wang, Kaiyou, E-mail: kywang@semi.ac.cn

2015-02-01

We carefully investigated the in-plane magnetization reversal and corresponding magnetic domain structures in Fe/n-GaAs/piezoelectric heterostructure using longitudinal magneto-optical Kerr microscopy. The coexistence of the in-plane <100> cubic and [11{sup ¯}0] uniaxial magnetic anisotropy was observed in this system at virgin state. The piezo voltages can effectively manipulate the magnetic properties of the Fe/n-GaAs/piezoelectric heterostructure, where the manipulation of two-jump to one-jump magnetization switching during the magnetic reversal was achieved with magnetic field applied in [100] direction. Our findings on manipulation of ferromagnetization in this heterostructure could be important for future metal-semiconductor spintronic applications. The additional uniaxial anisotropy induced by piezo voltages obtained at ±75 V is ±1.4×10{sup 3} J/m{sup 3}. - Highlights: • In this work, we use piezo voltages not only realize the significant change of coercivity but also effectively manipulate the magnetization transition from one step to two steps during magnetic reversal, indicating that the piezo-voltages can be used to effectively control the magnetization reversal. • The additional uniaxial anisotropy induced by piezo voltages at +/−75 V are +/−1.4×10{sup 3} J/m{sup 3}. This work could be very used for future metal-semiconductor spintronic devices.

Magnetotransport in heterostructures of transition metal dichalcogenides and graphene

Science.gov (United States)

Völkl, Tobias; Rockinger, Tobias; Drienovsky, Martin; Watanabe, Kenji; Taniguchi, Takashi; Weiss, Dieter; Eroms, Jonathan

2017-09-01

We use a van der Waals pickup technique to fabricate different heterostructures containing WSe2(WS2) and graphene. The heterostructures were structured by plasma etching, contacted by one-dimensional edge contacts, and a top gate was deposited. For graphene /WSe2/SiO2 samples we observe mobilities of ˜12 000 cm2V-1s-1 . Magnetic-field-dependent resistance measurements on these samples show a peak in the conductivity at low magnetic fields. This dip is attributed to the weak antilocalization (WAL) effect, stemming from spin-orbit coupling. Samples where graphene is encapsulated between WSe2(WS2) and hexagonal boron nitride show a much higher mobility of up to ˜120 000 cm2V-1s-1 . However, in these samples no WAL peak can be observed. We attribute this to a transition from the diffusive to the quasiballistic regime. At low magnetic fields a resistance peak appears, which we ascribe to a size effect due to boundary scattering. Shubnikov-de Haas oscillations in fully encapsulated samples show all integer filling factors due to complete lifting of the spin and valley degeneracies.

Computational Search for Two-Dimensional MX2 Semiconductors with Possible High Electron Mobility at Room Temperature

Directory of Open Access Journals (Sweden)

Zhishuo Huang

2016-08-01

Full Text Available Neither of the two typical two-dimensional materials, graphene and single layer MoS 2 , are good enough for developing semiconductor logical devices. We calculated the electron mobility of 14 two-dimensional semiconductors with composition of MX 2 , where M (=Mo, W, Sn, Hf, Zr and Pt are transition metals, and Xs are S, Se and Te. We approximated the electron phonon scattering matrix by deformation potentials, within which long wave longitudinal acoustical and optical phonon scatterings were included. Piezoelectric scattering in the compounds without inversion symmetry is also taken into account. We found that out of the 14 compounds, WS 2 , PtS 2 and PtSe 2 are promising for logical devices regarding the possible high electron mobility and finite band gap. Especially, the phonon limited electron mobility in PtSe 2 reaches about 4000 cm 2 ·V - 1 ·s - 1 at room temperature, which is the highest among the compounds with an indirect bandgap of about 1.25 eV under the local density approximation. Our results can be the first guide for experiments to synthesize better two-dimensional materials for future semiconductor devices.

Band alignment of two-dimensional metal monochalcogenides MXs (M=Ga,In; X=S,Se,Te

Directory of Open Access Journals (Sweden)

Huazheng Sun

2017-09-01

Full Text Available Monolayer metal monochalcogenides MXs (M=Ga,In; X=S,Se,Te form a new class of two-dimensional semiconductors with indirect band gaps, and their band alignment information is investigated via first principles calculations. The dependence of band gap, valence-band maximum, conduction band minimum, and charge transfer on the M or X element has been obtained and can be understood from the orbital analysis of the band edges. Potential applications of metal monochalcogenides to design van der Waals heterostructures and catalyse the photo-splitting reaction of water have been discussed.

k-Space imaging of anisotropic 2D electron gas in GaN/GaAlN high-electron-mobility transistor heterostructures

OpenAIRE

Lev, L. L.; Maiboroda, I. O.; Husanu, M. -A.; Grichuk, E. S.; Chumakov, N. K.; Ezubchenko, I. S.; Chernykh, I. A.; Wang, X.; Tobler, B.; Schmitt, T.; Zanaveskin, M. L.; Valeyev, V. G.; Strocov, V. N.

2018-01-01

Nanostructures based on buried interfaces and heterostructures are at the heart of modern semiconductor electronics as well as future devices utilizing spintronics, multiferroics, topological effects and other novel operational principles. Knowledge of electronic structure of these systems resolved in electron momentum k delivers unprecedented insights into their physics. Here, we explore 2D electron gas formed in GaN/AlGaN high-electron-mobility transistor (HEMT) heterostructures with an ult...

Ferroelectric switching in epitaxial PbZr0.2Ti0.8O3/ZnO/GaN heterostructures

Science.gov (United States)

Wang, Juan; Salev, Pavel; Grigoriev, Alexei

As a wide-bandgap semiconductor, ZnO has gained substantial interest due to its favorable properties including high electron mobility, strong room-temperature luminescence, etc. The main obstacle of its application is the lack of reproducible and low-resistivity p-type ZnO. P-type doping of ZnO through the interface charge injection, which can be achieved by the polarization switching of ferroelectric films, is a tempting solution. We explored ferroelectric switching behavior of PbZr0.2Ti0.8O3/ZnO/GaN heterostructures epitaxially grown on Sapphire substrates by RF sputtering. The electrical measurements of Pt/PbZr0.2Ti0.8O3/ZnO/GaN ferroelectric-semiconductor capacitors revealed unusual behavior that is a combination of polarization switching and a diode I-V characteristics.

Hydrogen in semiconductors II

CERN Document Server

Nickel, Norbert H; Weber, Eicke R; Nickel, Norbert H

1999-01-01

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition ...

Photoelectric properties of ZnO/Ag2S heterostructure and its photoelectric ethanol sensing characteristics

International Nuclear Information System (INIS)

Zhang Yu; Liu Bingkun; Wang Dejun; Lin Yanhong; Xie Tengfeng; Zhai Jiali

2012-01-01

Highlights: ► The ZnO/Ag 2 S heterostructure shows good photoelectric properties under visible-light irradiation. ► Transient photovoltage results reveal the separation process of photo-generated charges and give further evidence of interfacial effects. ► Photoelectric ethanol sensing characteristics have been found for the ZnO/Ag 2 S heterostructure at room temperature. - Abstract: The photoelectric properties of ZnO microspheres, ZnO/Ag 2 S heterogeneous microspheres and Ag 2 S hollow microspheres were investigated systematically by surface photovoltage, transient photovoltage and surface photocurrent techniques. The ZnO/Ag 2 S heterostructure shows superior photoelectric properties in visible-light region compared with pure Ag 2 S. Transient photovoltage results reveal the separation processes of photo-generated charge carriers in the samples. The photoelectric ethanol sensing property induced by visible light for the ZnO/Ag 2 S heterostructure has been found, which should be valuable for the practical application of semiconductor gas sensors at room temperature.

Manipulating Conduction in Metal Oxide Semiconductors: Mechanism Investigation and Conductance Tuning in Doped Fe2O3 Hematite and Metal/Ga2O3/Metal Heterostructure

Science.gov (United States)

Zhao, Bo

This study aims at understanding the fundamental mechanisms of conduction in several metal oxide semiconductors, namely alpha-Fe2O 3 and beta-Ga2O3, and how it could be tuned to desired values/states to enable a wide range of application. In the first effort, by adding Ti dopant, we successfully turned Fe2O3 from insulating to conductive by fabricated compositionally and structurally well-defined epitaxial alpha-(TixFe1-x)2 O3(0001) films for x ≤ 0.09. All films were grown by oxygen plasma assisted molecular beam epitaxy on Al2O3(0001) sapphire substrate with a buffer layer of Cr2O3 to relax the strain from lattice mismatch. Van der Pauw resistivity and Hall effect measurements reveal carrier concentrations between 1019 and 1020 cm-3 at room temperature and mobilities in the range of 0.1 to 0.6 cm2/V˙s. Such low mobility, unlike conventional band-conduction semiconductor, was attributed to hopping mechanism due to strong electron-phonon interaction in the lattice. More interestingly, conduction mechanism transitions from small-polaron hopping at higher temperatures to variable range hopping at lower temperatures with a transition temperature between 180 to 140 K. Consequently, by adding Ti dopant, conductive Fe 2O3 hematite thin films were achieved with a well-understood conducting mechanism that could guide further device application such as spin transistor and water splitting. In the case of Ga2O3, while having a band gap as high as 5 eV, they are usually conductive for commercially available samples due to unintentional Si doping. However, we discovered the conductance could be repeatedly switched between high resistance state and low resistance state when made into metal/Ga2O3 /metal heterostructure. However, to obtain well controlled switching process with consistent switching voltages and resistances, understanding switching mechanism is the key. In this study, we fabricated resistive switching devices utilizing a Ni/Ga2O3/Ir heterostructure. Bipolar

Detection of Defect-Induced Magnetism in Low-Dimensional ZnO Structures by Magnetophotocurrent.

Science.gov (United States)

Lorite, Israel; Kumar, Yogesh; Esquinazi, Pablo; Zandalazini, Carlos; de Heluani, Silvia Perez

2015-09-09

The detection of defect-induced magnetic order in single low-dimensional oxide structures is in general difficult because of the relatively small yield of magnetically ordered regions. In this work, the effect of an external magnetic field on the transient photocurrent measured after light irradiation on different ZnO samples at room temperature is studied. It has been found that a magnetic field produces a change in the relaxation rate of the transient photocurrent only in magnetically ordered ZnO samples. This rate can decrease or increase with field, depending on whether the magnetically ordered region is in the bulk or only at the surface of the ZnO sample. The phenomenon reported here is of importance for the development of magneto-optical low-dimensional oxides devices and provides a new guideline for the detection of magnetic order in low-dimensional magnetic semiconductors. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Highly mobile charge-transfer excitons in two-dimensional WS2/tetracene heterostructures

Science.gov (United States)

Zhu, Tong; Yuan, Long; Zhao, Yan; Zhou, Mingwei; Wan, Yan; Mei, Jianguo; Huang, Libai

2018-01-01

Charge-transfer (CT) excitons at heterointerfaces play a critical role in light to electricity conversion using organic and nanostructured materials. However, how CT excitons migrate at these interfaces is poorly understood. We investigate the formation and transport of CT excitons in two-dimensional WS2/tetracene van der Waals heterostructures. Electron and hole transfer occurs on the time scale of a few picoseconds, and emission of interlayer CT excitons with a binding energy of ~0.3 eV has been observed. Transport of the CT excitons is directly measured by transient absorption microscopy, revealing coexistence of delocalized and localized states. Trapping-detrapping dynamics between the delocalized and localized states leads to stretched-exponential photoluminescence decay with an average lifetime of ~2 ns. The delocalized CT excitons are remarkably mobile with a diffusion constant of ~1 cm2 s−1. These highly mobile CT excitons could have important implications in achieving efficient charge separation. PMID:29340303

Ion implantation in compound semiconductors for high-performance electronic devices

International Nuclear Information System (INIS)

Zolper, J.C.; Baca, A.G.; Sherwin, M.E.; Klem, J.F.

1996-01-01

Advanced electronic devices based on compound semiconductors often make use of selective area ion implantation doping or isolation. The implantation processing becomes more complex as the device dimensions are reduced and more complex material systems are employed. The authors review several applications of ion implantation to high performance junction field effect transistors (JFETs) and heterostructure field effect transistors (HFETs) that are based on compound semiconductors, including: GaAs, AlGaAs, InGaP, and AlGaSb

Selective UV radiation detection on the basis of low-dimensional ZnCdS/ZnMgS/GaP and ZnCdS/ZnS/GaP heterostructures

Energy Technology Data Exchange (ETDEWEB)

Averin, S. V., E-mail: sva278@ire216.msk.su; Kuznetzov, P. I.; Zhitov, V. A.; Zakharov, L. Yu.; Kotov, V. M.; Alkeev, N. V. [Russian Academy of Sciences, Fryazino Branch, Kotel’nikov Institute of Radio Engineering and Electronics (Russian Federation); Gladisheva, N. B. [Pulsar State Plant (Russian Federation)

2015-11-15

The detecting properties of periodic heterostructures with ZnCdS quantum wells separated by ZnMgS or ZnS barrier layers are studied. Heterostructures are grown on semi-insulating GaP substrates by metal organic vapor-phase epitaxy (MOVPE). On their basis, metal–semiconductor–metal (MSM) diodes with interdigital Schottky contacts 3 μm, distances between them of 3 μm, and a total detector area of 100 × 100 μm are fabricated. The detectors have low dark currents (10{sup –12} A); at low bias voltages, they provide a narrow- band response (full-width at half-maximum of FWHM = 18 nm at a wavelength of 350 nm) which is controlled by the ZnCdS quantum-well composition. As bias is increased to 70 V, the maximum detector sensitivity shifts by a wavelength of 450 nm, which is caused by penetration of the external-bias electric field into the semi-insulating GaP substrate. In this case, the narrow-band response of the detector at a wavelength of 350 nm is retained, i.e., the two-color detection of light is provided.

Collaborative Research and Development. Delivery Order 0006: Transmission Electron Microscope Image Modeling and Semiconductor Heterointerface Characterization

National Research Council Canada - National Science Library

Mahalingam, Krishnamurthy

2006-01-01

.... Transmission electron microscope (TEM) characterization studies were performed on a variety of novel III-V semiconductor heterostructures being developed for advanced optoelectronic device applications...

Synthesis of Metal-Oxide/Carbon-Fiber Heterostructures and Their Properties for Organic Dye Removal and High-Temperature CO2 Adsorption

Science.gov (United States)

Shao, Liangzhi; Nie, Shibin; Shao, Xiankun; Zhang, LinLin; Li, Benxia

2018-03-01

One-dimensional metal-oxide/carbon-fiber (MO/CF) heterostructures were prepared by a facile two-step method using the natural cotton as a carbon source the low-cost commercial metal salts as precursors. The metal oxide nanostructures were first grown on the cotton fibers by a solution chemical deposition, and the metal-oxide/cotton heterostructures were then calcined and carbonized in nitrogen atmosphere. Three typical MO/CF heterostructures of TiO2/CF, ZnO/CF, and Fe2O3/CF were prepared and characterized. The loading amount of the metal oxide nanostructures on carbon fibers can be tuned by controlling the concentration of metal salt in the chemical deposition process. Finally, the performance of the as-obtained MO/CF heterostructures for organic dye removal from water was tested by the photocatalytic degradation under a simulated sunlight, and their properties of high-temperature CO2 adsorption were predicted by the temperature programmed desorption. The present study would provide a desirable strategy for the synthesis of MO/CF heterostructures for various applications.

Theory of coherent time-dependent transport in one-dimensional multiband semiconductor super-lattices

DEFF Research Database (Denmark)

Rotvig, J.; Smith, H.; Jauho, Antti-Pekka

1996-01-01

We present an analytical study of one-dimensional semiconductor superlattices in external electric fields, which may be time dependent. A number of general results for the (quasi)energies and eigenstates are derived. An equation of motion for the density matrix is obtained for a two-band model...

Semiconductor Metal-Organic Frameworks: Future Low-Bandgap Materials.

Science.gov (United States)

Usman, Muhammad; Mendiratta, Shruti; Lu, Kuang-Lieh

2017-02-01

Metal-organic frameworks (MOFs) with low density, high porosity, and easy tunability of functionality and structural properties, represent potential candidates for use as semiconductor materials. The rapid development of the semiconductor industry and the continuous miniaturization of feature sizes of integrated circuits toward the nanometer (nm) scale require novel semiconductor materials instead of traditional materials like silicon, germanium, and gallium arsenide etc. MOFs with advantageous properties of both the inorganic and the organic components promise to serve as the next generation of semiconductor materials for the microelectronics industry with the potential to be extremely stable, cheap, and mechanically flexible. Here, a perspective of recent research is provided, regarding the semiconducting properties of MOFs, bandgap studies, and their potential in microelectronic devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Oscillatory bistability of real-space transfer in semiconductor heterostructures

Science.gov (United States)

Do˙ttling, R.; Scho˙ll, E.

1992-01-01

Charge transport parallel to the layers of a modulation-doped GaAs/AlxGa1-xAs heterostructure is studied theoretically. The heating of electrons by the applied electric field leads to real-space transfer of electrons from the GaAs into the adjacent AlxGa1-xAs layer. For sufficiently large dc bias, spontaneous periodic 100-GHz current oscillations, and bistability and hysteretic switching transitions between oscillatory and stationary states are predicted. We present a detailed investigation of complex bifurcation scenarios as a function of the bias voltage U0 and the load resistance RL. For large RL subcritical Hopf bifurcations and global bifurcations of limit cycles are displayed.

The Physics of Semiconductors An Introduction Including Devices and Nanophysics

CERN Document Server

Grundmann, Marius

2006-01-01

The Physics of Semiconductors provides material for a comprehensive upper-level-undergrauate and graduate course on the subject, guiding readers to the point where they can choose a special topic and begin supervised research. The textbook provides a balance between essential aspects of solid-state and semiconductor physics, on the one hand, and the principles of various semiconductor devices and their applications in electronic and photonic devices, on the other. It highlights many practical aspects of semiconductors such as alloys, strain, heterostructures, nanostructures, that are necessary in modern semiconductor research but typically omitted in textbooks. For the interested reader some additional advanced topics are included, such as Bragg mirrors, resonators, polarized and magnetic semiconductors are included. Also supplied are explicit formulas for many results, to support better understanding. The Physics of Semiconductors requires little or no prior knowledge of solid-state physics and evolved from ...

Low-confinement high-power semiconductor lasers

NARCIS (Netherlands)

Buda, M.

1999-01-01

This thesis presents the results of studies related to optimisation of high power semiconductor laser diodes using the low confinement concept. This implies a different approach in designing the transversal layer structure before growth and in processing the wafer after growth, for providing the

Interpreting Interfacial Structure in Cross-Sectional STM Images of III-V Semiconductor Heterostructures

National Research Council Canada - National Science Library

Nosho, B. Z; Barvosa-Carter, W; Yang, M. J; Bennett, B. R; Whitman, L. J

2000-01-01

...) can be used for the study of III-V heterostructure interfaces. The interpretation of interfacial structure in XSTM images is impeded by the fact that only every other III or V plane as grown on the (001...

Modulation of Quantum Tunneling via a Vertical Two-Dimensional Black Phosphorus and Molybdenum Disulfide p-n Junction.

Science.gov (United States)

Liu, Xiaochi; Qu, Deshun; Li, Hua-Min; Moon, Inyong; Ahmed, Faisal; Kim, Changsik; Lee, Myeongjin; Choi, Yongsuk; Cho, Jeong Ho; Hone, James C; Yoo, Won Jong

2017-09-26

Diverse diode characteristics were observed in two-dimensional (2D) black phosphorus (BP) and molybdenum disulfide (MoS 2 ) heterojunctions. The characteristics of a backward rectifying diode, a Zener diode, and a forward rectifying diode were obtained from the heterojunction through thickness modulation of the BP flake or back gate modulation. Moreover, a tunnel diode with a precursor to negative differential resistance can be realized by applying dual gating with a solid polymer electrolyte layer as a top gate dielectric material. Interestingly, a steep subthreshold swing of 55 mV/dec was achieved in a top-gated 2D BP-MoS 2 junction. Our simple device architecture and chemical doping-free processing guaranteed the device quality. This work helps us understand the fundamentals of tunneling in 2D semiconductor heterostructures and shows great potential in future applications in integrated low-power circuits.

A proposal for Coulomb assisted laser cooling of piezoelectric semiconductors

Energy Technology Data Exchange (ETDEWEB)

Nia, Iman Hassani; Mohseni, Hooman, E-mail: hmohseni@ece.northwestern.edu [Bio-Inspired Sensors and Optoelectronics Laboratory (BISOL), Department of Electrical Engineering, Northwestern University, Evanston, Illinois 60208 (United States)

2014-07-28

Anti-Stokes laser cooling of semiconductors as a compact and vibration-free method is very attractive. While it has achieved significant milestones, increasing its efficiency is highly desirable. The main limitation is the lack of the pristine material quality with high luminescence efficiency. Here, we theoretically demonstrate that the Coulomb interaction among electrons and holes in piezoelectric heterostructures could lead to coherent damping of acoustic phonons; rendering a significantly higher efficiency that leads to the possibility of cooling a broad range of semiconductors.

Dimensional and correlation effects of charged excitons in low-dimensional semiconductors

DEFF Research Database (Denmark)

Rønnow, Troels Frimodt; Pedersen, Thomas Garm; Cornean, Horia

2010-01-01

In this paper, we investigate the existence of bound trion states in fractional dimensional nanostructures, in terms of variational calculus. We start with trial states, then we refine the result with the help of the Hartree–Fock approximation and finally we use a partial basis expansion. We show...

The control of stoichiometry in Epitaxial semiconductor structures. Interfacial Chemistry: Property relations. A workshop review

Science.gov (United States)

Bachmann, Klaus J.

1995-01-01

A workshop on the control of stoichiometry in epitaxial semiconductor structures was held on August 21-26, 1995 in the hotel Stutenhaus at Vesser in Germany. The secluded location of the workshop in the forest of Thuringia and its informal style stimulated extensive private discussions among the participants and promoted new contacts between young scientists from Eastern and Western Europe and the USA. Topics addressed by the presentations were interactions of precursors to heteroepitaxy and doping with the substrate surface, the control of interfacial properties under the conditions of heteroepitaxy for selected materials systems, methods of characterization of interfaces and native point defects in semiconductor heterostructures and an in depth evaluation of the present status of the control and characterization of the point defect chemistry for one specific semiconductor (ZnGeP2), including studies of both heterostructures and bulk single crystals. The selected examples of presentations and comments given here represent individual choices - made by the author to highlight major points of the discussions.

Effects of Coupling Lens on Optical Refrigeration of Semiconductors

International Nuclear Information System (INIS)

Kai, Ding; Yi-Ping, Zeng

2008-01-01

Optical refrigeration of semiconductors is encountering efficiency difficulties caused by nonradiative recombination and luminescence trapping. A commonly used approach for enhancing luminescence efficiency of a semiconductor device is coupling a lens with the device. We quantitatively study the effects of a coupling lens on optical refrigeration based on rate equations and photon recycling, and calculated cooling efficiencies of different coupling mechanisms and of different lens materials. A GaAs/GaInP heterostructure coupled with a homo-epitaxial GaInP hemispherical lens is recommended. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Exotic topological insulator states and topological phase transitions in Sb2Se3-Bi2Se3 heterostructures

KAUST Repository

Zhang, Qianfan; Zhang, Zhiyong; Zhu, Zhiyong; Schwingenschlö gl, Udo; Cui, Yi

2012-01-01

in controlling the electronic properties of semiconductor devices, are interesting for topological insulators. Here, we studied the spatial distribution of the topological state in Sb 2Se 3-Bi 2Se 3 heterostructures by first-principle simulation and discovered

AlN/GaN heterostructures for normally-off transistors

Energy Technology Data Exchange (ETDEWEB)

Zhuravlev, K. S., E-mail: zhur@isp.nsc.ru; Malin, T. V.; Mansurov, V. G.; Tereshenko, O. E. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation); Abgaryan, K. K.; Reviznikov, D. L. [Dorodnicyn Computing Centre of the Russian Academy of Sciences (Russian Federation); Zemlyakov, V. E.; Egorkin, V. I. [National Research University of Electronic Technology (MIET) (Russian Federation); Parnes, Ya. M.; Tikhomirov, V. G. [Joint Stock Company “Svetlana-Electronpribor” (Russian Federation); Prosvirin, I. P. [Russian Academy of Sciences, Boreskov Institute of Catalysis, Siberian Branch (Russian Federation)

2017-03-15

The structure of AlN/GaN heterostructures with an ultrathin AlN barrier is calculated for normally-off transistors. The molecular-beam epitaxy technology of in situ passivated SiN/AlN/GaN heterostructures with a two-dimensional electron gas is developed. Normally-off transistors with a maximum current density of ~1 A/mm, a saturation voltage of 1 V, a transconductance of 350 mS/mm, and a breakdown voltage of more than 60 V are demonstrated. Gate lag and drain lag effects are almost lacking in these transistors.

AlGaN channel field effect transistors with graded heterostructure ohmic contacts

Science.gov (United States)

Bajaj, Sanyam; Akyol, Fatih; Krishnamoorthy, Sriram; Zhang, Yuewei; Rajan, Siddharth

2016-09-01

We report on ultra-wide bandgap (UWBG) Al0.75Ga0.25N channel metal-insulator-semiconductor field-effect transistors (MISFETs) with heterostructure engineered low-resistance ohmic contacts. The low intrinsic electron affinity of AlN (0.6 eV) leads to large Schottky barriers at the metal-AlGaN interface, resulting in highly resistive ohmic contacts. In this work, we use a reverse compositional graded n++ AlGaN contact layer to achieve upward electron affinity grading, leading to a low specific contact resistance (ρsp) of 1.9 × 10-6 Ω cm2 to n-Al0.75Ga0.25N channels (bandgap ˜5.3 eV) with non-alloyed contacts. We also demonstrate UWBG Al0.75Ga0.25N channel MISFET device operation employing the compositional graded n++ ohmic contact layer and 20 nm atomic layer deposited Al2O3 as the gate-dielectric.

Device Physics of Narrow Gap Semiconductors

CERN Document Server

Chu, Junhao

2010-01-01

Narrow gap semiconductors obey the general rules of semiconductor science, but often exhibit extreme features of these rules because of the same properties that produce their narrow gaps. Consequently these materials provide sensitive tests of theory, and the opportunity for the design of innovative devices. Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. Device Physics of Narrow Gap Semiconductors offers descriptions of the materials science and device physics of these unique materials. Topics covered include impurities and defects, recombination mechanisms, surface and interface properties, and the properties of low dimensional systems for infrared applications. This book will help readers to understand not only the semiconductor physics and materials science, but also how they relate to advanced opto-electronic devices. The last chapter applies the understanding of device physics to photoconductive detectors, photovoltaic infrared detector...

High pressure semiconductor physics I

CERN Document Server

Willardson, R K; Paul, William; Suski, Tadeusz

1998-01-01

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tra...

Identification of defects in semiconductors

CERN Document Server

Stavola, Michael; Weber, Eicke R; Stavola, Michael

1998-01-01

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors.The"Willardson and Beer"Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices,Oxygen in Silicon, and others promise indeed that this traditi...

The physics of semiconductors an introduction including nanophysics and applications

CERN Document Server

Grundmann, Marius

2016-01-01

The 3rd edition of this successful textbook contains ample material for a comprehensive upper-level undergraduate or beginning graduate course, guiding readers to the point where they can choose a special topic and begin supervised research. The textbook provides a balance between essential aspects of solid-state and semiconductor physics, on the one hand, and the principles of various semiconductor devices and their applications in electronic and photonic devices, on the other. It highlights many practical aspects of semiconductors such as alloys, strain, heterostructures, nanostructures, that are necessary in modern semiconductor research but typically omitted in textbooks. Coverage also includes additional advanced topics, such as Bragg mirrors, resonators, polarized and magnetic semiconductors, nanowires, quantum dots, multi-junction solar cells, thin film transistors, carbon-based nanostructures and transparent conductive oxides. The text derives explicit formulas for many results to support better under...

Coherent dynamics in semiconductors

DEFF Research Database (Denmark)

Hvam, Jørn Märcher

1998-01-01

enhanced in quantum confined lower-dimensional systems, where exciton and biexciton effects dominate the spectra even at room temperature. The coherent dynamics of excitons are at modest densities well described by the optical Bloch equations and a number of the dynamical effects known from atomic......Ultrafast nonlinear optical spectroscopy is used to study the coherent dynamics of optically excited electron-hole pairs in semiconductors. Coulomb interaction implies that the optical inter-band transitions are dominated, at least at low temperatures, by excitonic effects. They are further...... and molecular systems are found and studied in the exciton-biexciton system of semiconductors. At densities where strong exciton interactions, or many-body effects, become dominant, the semiconductor Bloch equations present a more rigorous treatment of the phenomena Ultrafast degenerate four-wave mixing is used...

NATO Advanced Research Workshop on Thin Film Growth Techniques for Low-Dimensional Structures

CERN Document Server

Parkin, S; Dobson, P; Neave, J; Arrott, A

1987-01-01

This work represents the account of a NATO Advanced Research Workshop on "Thin Film Growth Techniques for Low Dimensional Structures", held at the University of Sussex, Brighton, England from 15-19 Sept. 1986. The objective of the workshop was to review the problems of the growth and characterisation of thin semiconductor and metal layers. Recent advances in deposition techniques have made it possible to design new material which is based on ultra-thin layers and this is now posing challenges for scientists, technologists and engineers in the assessment and utilisation of such new material. Molecular beam epitaxy (MBE) has become well established as a method for growing thin single crystal layers of semiconductors. Until recently, MBE was confined to the growth of III-V compounds and alloys, but now it is being used for group IV semiconductors and II-VI compounds. Examples of such work are given in this volume. MBE has one major advantage over other crystal growth techniques in that the structure of the growi...

Electronic Properties of a 1D Intrinsic/p-Doped Heterojunction in a 2D Transition Metal Dichalcogenide Semiconductor

KAUST Repository

Song, Zhibo; Schultz, Thorsten; Ding, Zijing; Lei, Bo; Han, Cheng; Amsalem, Patrick; Lin, Tingting; Chi, Dongzhi; Wong, Swee Liang; Zheng, Yu Jie; Li, Ming-yang; Li, Lain-Jong; Chen, Wei; Koch, Norbert; Huang, Yu Li; Wee, Andrew Thye Shen

2017-01-01

Two-dimensional (2D) semiconductors offer a convenient platform to study 2D physics, for example, to understand doping in an atomically thin semiconductor. Here, we demonstrate the fabrication and unravel the electronic properties of a lateral doped/intrinsic heterojunction in a single-layer (SL) tungsten diselenide (WSe2), a prototype semiconducting transition metal dichalcogenide (TMD), partially covered with a molecular acceptor layer, on a graphite substrate. With combined experiments and theoretical modeling, we reveal the fundamental acceptor-induced p-doping mechanism for SL-WSe2. At the 1D border between the doped and undoped SL-WSe2 regions, we observe band bending and explain it by Thomas-Fermi screening. Using atomically resolved scanning tunneling microscopy and spectroscopy, the screening length is determined to be in the few nanometer range, and we assess the carrier density of intrinsic SL-WSe2. These findings are of fundamental and technological importance for understanding and employing surface doping, for example, in designing lateral organic TMD heterostructures for future devices.

Electronic Properties of a 1D Intrinsic/p-Doped Heterojunction in a 2D Transition Metal Dichalcogenide Semiconductor

KAUST Repository

Song, Zhibo

2017-07-28

Two-dimensional (2D) semiconductors offer a convenient platform to study 2D physics, for example, to understand doping in an atomically thin semiconductor. Here, we demonstrate the fabrication and unravel the electronic properties of a lateral doped/intrinsic heterojunction in a single-layer (SL) tungsten diselenide (WSe2), a prototype semiconducting transition metal dichalcogenide (TMD), partially covered with a molecular acceptor layer, on a graphite substrate. With combined experiments and theoretical modeling, we reveal the fundamental acceptor-induced p-doping mechanism for SL-WSe2. At the 1D border between the doped and undoped SL-WSe2 regions, we observe band bending and explain it by Thomas-Fermi screening. Using atomically resolved scanning tunneling microscopy and spectroscopy, the screening length is determined to be in the few nanometer range, and we assess the carrier density of intrinsic SL-WSe2. These findings are of fundamental and technological importance for understanding and employing surface doping, for example, in designing lateral organic TMD heterostructures for future devices.

Barrier inhomogeneities at vertically stacked graphene-based heterostructures.

Science.gov (United States)

Lin, Yen-Fu; Li, Wenwu; Li, Song-Lin; Xu, Yong; Aparecido-Ferreira, Alex; Komatsu, Katsuyoshi; Sun, Huabin; Nakaharai, Shu; Tsukagoshi, Kazuhito

2014-01-21

The integration of graphene and other atomically flat, two-dimensional materials has attracted much interest and been materialized very recently. An in-depth understanding of transport mechanisms in such heterostructures is essential. In this study, vertically stacked graphene-based heterostructure transistors were manufactured to elucidate the mechanism of electron injection at the interface. The temperature dependence of the electrical characteristics was investigated from 300 to 90 K. In a careful analysis of current-voltage characteristics, an unusual decrease in the effective Schottky barrier height and increase in the ideality factor were observed with decreasing temperature. A model of thermionic emission with a Gaussian distribution of barriers was able to precisely interpret the conduction mechanism. Furthermore, mapping of the effective Schottky barrier height is unmasked as a function of temperature and gate voltage. The results offer significant insight for the development of future layer-integration technology based on graphene-based heterostructures.

Atomically Thin Heterostructures Based on Single-Layer Tungsten Diselenide and Graphene

KAUST Repository

Lin, Yu-Chuan

2014-11-10

Heterogeneous engineering of two-dimensional layered materials, including metallic graphene and semiconducting transition metal dichalcogenides, presents an exciting opportunity to produce highly tunable electronic and optoelectronic systems. In order to engineer pristine layers and their interfaces, epitaxial growth of such heterostructures is required. We report the direct growth of crystalline, monolayer tungsten diselenide (WSe2) on epitaxial graphene (EG) grown from silicon carbide. Raman spectroscopy, photoluminescence, and scanning tunneling microscopy confirm high-quality WSe2 monolayers, whereas transmission electron microscopy shows an atomically sharp interface, and low energy electron diffraction confirms near perfect orientation between WSe2 and EG. Vertical transport measurements across the WSe2/EG heterostructure provides evidence that an additional barrier to carrier transport beyond the expected WSe2/EG band offset exists due to the interlayer gap, which is supported by theoretical local density of states (LDOS) calculations using self-consistent density functional theory (DFT) and nonequilibrium Green\\'s function (NEGF).

Atomically Thin Heterostructures Based on Single-Layer Tungsten Diselenide and Graphene

KAUST Repository

Lin, Yu-Chuan; Chang, Chih-Yuan S.; Ghosh, Ram Krishna; Li, Jie; Zhu, Hui; Addou, Rafik; Diaconescu, Bogdan; Ohta, Taisuke; Peng, Xin; Lu, Ning; Kim, Moon J.; Robinson, Jeremy T.; Wallace, Robert M; Mayer, Theresa S.; Datta, Suman; Li, Lain-Jong; Robinson, Joshua A.

2014-01-01

Heterogeneous engineering of two-dimensional layered materials, including metallic graphene and semiconducting transition metal dichalcogenides, presents an exciting opportunity to produce highly tunable electronic and optoelectronic systems. In order to engineer pristine layers and their interfaces, epitaxial growth of such heterostructures is required. We report the direct growth of crystalline, monolayer tungsten diselenide (WSe2) on epitaxial graphene (EG) grown from silicon carbide. Raman spectroscopy, photoluminescence, and scanning tunneling microscopy confirm high-quality WSe2 monolayers, whereas transmission electron microscopy shows an atomically sharp interface, and low energy electron diffraction confirms near perfect orientation between WSe2 and EG. Vertical transport measurements across the WSe2/EG heterostructure provides evidence that an additional barrier to carrier transport beyond the expected WSe2/EG band offset exists due to the interlayer gap, which is supported by theoretical local density of states (LDOS) calculations using self-consistent density functional theory (DFT) and nonequilibrium Green's function (NEGF).

Quantum transport in new two-dimensional heterostructures: Thin films of topological insulators, phosphorene

Science.gov (United States)

Majidi, Leyla; Zare, Moslem; Asgari, Reza

2018-06-01

The unusual features of the charge and spin transport characteristics are investigated in new two-dimensional heterostructures. Intraband specular Andreev reflection is realized in a topological insulator thin film normal/superconducting junction in the presence of a gate electric field. Perfect specular electron-hole conversion is shown for different excitation energy values in a wide experimentally available range of the electric field and also for all angles of incidence when the excitation energy has a particular value. It is further demonstrated that the transmission probabilities of the incoming electrons from different spin subbands to the monolayer phosphorene ferromagnetic/normal/ferromagnetic (F/N/F) hybrid structure have different behavior with the angle of incidence and perfect transmission occurs at defined angles of incidence to the proposed structure with different length of the N region, and different alignments of magnetization vectors. Moreover, the sign change of the spin-current density is demonstrated by tuning the chemical potential and exchange field of the F region.

Electrons and Phonons in Semiconductor Multilayers

Science.gov (United States)

Ridley, B. K.

1996-11-01

This book provides a detailed description of the quantum confinement of electrons and phonons in semiconductor wells, superlattices and quantum wires, and shows how this affects their mutual interactions. It discusses the transition from microscopic to continuum models, emphasizing the use of quasi-continuum theory to describe the confinement of optical phonons and electrons. The hybridization of optical phonons and their interactions with electrons are treated, as are other electron scattering mechanisms. The book concludes with an account of the electron distribution function in three-, two- and one-dimensional systems, in the presence of electrical or optical excitation. This text will be of great use to graduate students and researchers investigating low-dimensional semiconductor structures, as well as to those developing new devices based on these systems.

Designing Diameter-Modulated Heterostructure Nanowires of PbTe/Te by Controlled Dewetting.

Science.gov (United States)

Kumar, Abinash; Kundu, Subhajit; Samantaray, Debadarshini; Kundu, Paromita; Zanaga, Daniele; Bals, Sara; Ravishankar, N

2017-12-13

Heterostructures consisting of semiconductors with controlled morphology and interfaces find applications in many fields. A range of axial, radial, and diameter-modulated nanostructures have been synthesized primarily using vapor phase methods. Here, we present a simple wet chemical routine to synthesize heterostructures of PbTe/Te using Te nanowires as templates. A morphology evolution study for the formation of these heterostructures has been performed. On the basis of these control experiments, a pathway for the formation of these nanostructures is proposed. Reduction of a Pb precursor to Pb on Te nanowire templates followed by interdiffusion of Pb/Te leads to the formation of a thin shell of PbTe on the Te wires. Controlled dewetting of the thin shell leads to the formation of cube-shaped PbTe that is periodically arranged on the Te wires. Using control experiments, we show that different reactions parameters like rate of addition of the reducing agent, concentration of Pb precursor and thickness of initial Te nanowire play a critical role in controlling the spacing between the PbTe cubes on the Te wires. Using simple surface energy arguments, we propose a mechanism for the formation of the hybrid. The principles presented are general and can be exploited for the synthesis of other nanoscale heterostructures.

Single InAs/GaSb nanowire low-power CMOS inverter.

Science.gov (United States)

Dey, Anil W; Svensson, Johannes; Borg, B Mattias; Ek, Martin; Wernersson, Lars-Erik

2012-11-14

III-V semiconductors have so far predominately been employed for n-type transistors in high-frequency applications. This development is based on the advantageous transport properties and the large variety of heterostructure combinations in the family of III-V semiconductors. In contrast, reports on p-type devices with high hole mobility suitable for complementary metal-oxide-semiconductor (CMOS) circuits for low-power operation are scarce. In addition, the difficulty to integrate both n- and p-type devices on the same substrate without the use of complex buffer layers has hampered the development of III-V based digital logic. Here, inverters fabricated from single n-InAs/p-GaSb heterostructure nanowires are demonstrated in a simple processing scheme. Using undoped segments and aggressively scaled high-κ dielectric, enhancement mode operation suitable for digital logic is obtained for both types of transistors. State-of-the-art on- and off-state characteristics are obtained and the individual long-channel n- and p-type transistors exhibit minimum subthreshold swings of SS = 98 mV/dec and SS = 400 mV/dec, respectively, at V(ds) = 0.5 V. Inverter characteristics display a full signal swing and maximum gain of 10.5 with a small device-to-device variability. Complete inversion is measured at low frequencies although large parasitic capacitances deform the waveform at higher frequencies.

Low-Dimensional Material: Structure-Property Relationship and Applications in Energy and Environmental Engineering

Science.gov (United States)

Xiao, Hang

In the past several decades, low-dimensional materials (0D materials, 1D materials and 2D materials) have attracted much interest from both the experimental and theoretical points of view. Because of the quantum confinement effect, low-dimensional materials have exhibited a kaleidoscope of fascinating phenomena and unusual physical and chemical properties, shedding light on many novel applications. Despite the enormous success has been achieved in the research of low-dimensional materials, there are three fundamental challenges of research in low-dimensional materials: 1) Develop new computational tools to accurately describe the properties of low-dimensional materials with low computational cost. 2) Predict and synthesize new low-dimensional materials with novel properties. 3) Reveal new phenomenon induced by the interaction between low-dimensional materials and the surrounding environment. In this thesis, atomistic modelling tools have been applied to address these challenges. We first developed ReaxFF parameters for phosphorus and hydrogen to give an accurate description of the chemical and mechanical properties of pristine and defected black phosphorene. ReaxFF for P/H is transferable to a wide range of phosphorus and hydrogen containing systems including bulk black phosphorus, blue phosphorene, edge-hydrogenated phosphorene, phosphorus clusters and phosphorus hydride molecules. The potential parameters were obtained by conducting global optimization with respect to a set of reference data generated by extensive ab initio calculations. We extended ReaxFF by adding a 60° correction term which significantly improved the description of phosphorus clusters. Emphasis was placed on the mechanical response of black phosphorene with different types of defects. Compared to the nonreactive SW potential of phosphorene, ReaxFF for P/H systems provides a significant improvement in describing the mechanical properties of the pristine and defected black phosphorene, as well

Fluorinated graphene and hexagonal boron nitride as ALD seed layers for graphene-based van der Waals heterostructures

International Nuclear Information System (INIS)

Guo, Hongwei; Liu, Yunlong; Xu, Yang; Meng, Nan; Luo, Jikui; Wang, Hongtao; Hasan, Tawfique; Wang, Xinran; Yu, Bin

2014-01-01

Ultrathin dielectric materials prepared by atomic-layer-deposition (ALD) technology are commonly used in graphene electronics. Using the first-principles density functional theory calculations with van der Waals (vdW) interactions included, we demonstrate that single-side fluorinated graphene (SFG) and hexagonal boron nitride (h-BN) exhibit large physical adsorption energy and strong electrostatic interactions with H 2 O-based ALD precursors, indicating their potential as the ALD seed layer for dielectric growth on graphene. In graphene-SFG vdW heterostructures, graphene is n-doped after ALD precursor adsorption on the SFG surface caused by vertical intrinsic polarization of SFG. However, graphene-h-BN vdW heterostructures help preserving the intrinsic characteristics of the underlying graphene due to in-plane intrinsic polarization of h-BN. By choosing SFG or BN as the ALD seed layer on the basis of actual device design needs, the graphene vdW heterostructures may find applications in low-dimensional electronics. (paper)

Manipulation of surface plasmon polariton propagation on isotropic and anisotropic two-dimensional materials coupled to boron nitride heterostructures

Energy Technology Data Exchange (ETDEWEB)

Inampudi, Sandeep; Nazari, Mina; Forouzmand, Ali; Mosallaei, Hossein, E-mail: hosseinm@coe.neu.edu [Department of Electrical and Computer Engineering, Northeastern University, 360 Huntington Ave., Boston, Massachusetts 02115 (United States)

2016-01-14

We present a comprehensive analysis of surface plasmon polariton dispersion characteristics associated with isotropic and anisotropic two-dimensional atomically thin layered materials (2D sheets) coupled to h-BN heterostructures. A scattering matrix based approach is presented to compute the electromagnetic fields and related dispersion characteristics of stacked layered systems composed of anisotropic 2D sheets and uniaxial bulk materials. We analyze specifically the surface plasmon polariton (SPP) dispersion characteristics in case of isolated and coupled two-dimensional layers with isotropic and anisotropic conductivities. An analysis based on residue theorem is utilized to identify optimum optical parameters (surface conductivity) and geometrical parameters (separation between layers) to maximize the SPP field at a given position. The effect of type and degree of anisotropy on the shapes of iso-frequency curves and propagation characteristics is discussed in detail. The analysis presented in this paper gives an insight to identify optimum setup to enhance the SPP field at a given position and in a given direction on the surface of two-dimensional materials.

Semiconductor high-energy radiation scintillation detector

International Nuclear Information System (INIS)

Kastalsky, A.; Luryi, S.; Spivak, B.

2006-01-01

We propose a new scintillation-type detector in which high-energy radiation generates electron-hole pairs in a direct-gap semiconductor material that subsequently recombine producing infrared light to be registered by a photo-detector. The key issue is how to make the semiconductor essentially transparent to its own infrared light, so that photons generated deep inside the semiconductor could reach its surface without tangible attenuation. We discuss two ways to accomplish this, one based on doping the semiconductor with shallow impurities of one polarity type, preferably donors, the other by heterostructure bandgap engineering. The proposed semiconductor scintillator combines the best properties of currently existing radiation detectors and can be used for both simple radiation monitoring, like a Geiger counter, and for high-resolution spectrography of the high-energy radiation. An important advantage of the proposed detector is its fast response time, about 1 ns, essentially limited only by the recombination time of minority carriers. Notably, the fast response comes without any degradation in brightness. When the scintillator is implemented in a qualified semiconductor material (such as InP or GaAs), the photo-detector and associated circuits can be epitaxially integrated on the scintillator slab and the structure can be stacked-up to achieve virtually any desired absorption capability

Possible High Thermoelectric Power in Semiconducting Carbon Nanotubes ˜A Case Study of Doped One-Dimensional Semiconductors˜

Science.gov (United States)

Yamamoto, Takahiro; Fukuyama, Hidetoshi

2018-02-01

We have theoretically investigated the thermoelectric properties of impurity-doped one-dimensional semiconductors, focusing on nitrogen-substituted (N-substituted) carbon nanotubes (CNTs), using the Kubo formula combined with a self-consistent t-matrix approximation. N-substituted CNTs exhibit extremely high thermoelectric power factor (PF) values originating from a characteristic of one-dimensional materials where decrease in the carrier density increase both the electrical conductivity and the Seebeck coefficient in the low-N regime. The chemical potential dependence of the PF values of semiconducting CNTs has also been studied as a field-effect transistor and it turns out that the PF values show a noticeable maximum in the vicinity of the band edges. This result demonstrates that "band-edge engineering" will be crucial for solid development of high-performance thermoelectric materials.

Plenary lectures of the divisions semiconductor physics, thin films, dynamics and statistical physics, magnetism, metal physics, surface physics, low temperature physics

International Nuclear Information System (INIS)

Roessler, U.

1992-01-01

This volume contains a selection of plenary and invited lectures of the Solid State Division spring meeting of the DPG (Deutsche Physikalische Gesellschaft) 1992 in Regensburg. The constribution come mainly from five fields of the physics of condensed matter: doped fullerenes and high Tc superconductors, surfaces, time-resolved on nonlinear optics, polymer melts, and low-dimensional semiconductor systems. (orig.)

Strong interlayer coupling in phosphorene/graphene van der Waals heterostructure: A first-principles investigation

Science.gov (United States)

Hu, Xue-Rong; Zheng, Ji-Ming; Ren, Zhao-Yu

2018-04-01

Based on first-principles calculations within the framework of density functional theory, we study the electronic properties of phosphorene/graphene heterostructures. Band gaps with different sizes are observed in the heterostructure, and charges transfer from graphene to phosphorene, causing the Fermi level of the heterostructure to shift downward with respect to the Dirac point of graphene. Significantly, strong coupling between two layers is discovered in the band spectrum even though it has a van der Waals heterostructure. A tight-binding Hamiltonian model is used to reveal that the resonance of the Bloch states between the phosphorene and graphene layers in certain K points combines with the symmetry matching between band states, which explains the reason for the strong coupling in such heterostructures. This work may enhance the understanding of interlayer interaction and composition mechanisms in van der Waals heterostructures consisting of two-dimensional layered nanomaterials, and may indicate potential reference information for nanoelectronic and optoelectronic applications.

Synthesis, Characterization, and Properties of the Two-Dimensional Chalcogenides: Monolayers, Alloys, and Heterostructures

Science.gov (United States)

Cain, Jeffrey D.

Inspired by the triumphs of graphene, and motivated by its limitations, the science and engineering community is rapidly exploring the landscape of other layered materials in their atomically-thin forms. Dominating this landscape are the layered chalcogenides; diverse in chemistry, crystal structure, and properties, there are well over 100 primary members of this material family. Driven by quantum confinement, single layers (or few, in some cases) of these materials exhibit electronic, optical, and mechanical properties that diverge dramatically from their bulk counterparts. While initially isolated in monolayer form via mechanical exfoliation, the field of two-dimensional (2D) materials is being forced evolve to more scalable and reliable methods. Focusing on the chalcogenides (e.g. MoS2, Bi 2Se3, etc.), this dissertation introduces and mechanistically examines multiple novel synthetic approaches for the direct growth of monolayers, heterostructures, and alloys with the desired quality, reproducibility and generality. The first methods described in this thesis are physical vapor transport (PVT) and evaporative thinning (ET): a facile, top-down synthesis approach for creating ultrathin specimens of layered materials down to the two-dimensional limit. Evaporative thinning, applied in this study to the fabrication of A2X3 (Bi2Se3 and Sb2Te3) monolayers, is based on the controlled evaporation of material from initially thick specimens until the 2D limit is reached. The resultant flakes are characterized with a suite of imaging and spectroscopic techniques and the mechanism of ET is investigated via in-situ heating within a transmission electron microscope. Additionally, the basic transport properties of the resultant flakes are probed. The growth of ultrathin GeSe flakes is explored using PVT and the material's basic structure, properties, and stability are addressed. Second, oxide precursor based chemical vapor deposition (CVD) is presented for the direct growth of

Interaction of microwave radiation with the high mobility two-dimensional electron system in GaAs/AlGaAs heterostructures

International Nuclear Information System (INIS)

Ramanayaka, A.N.; Ye, Tianyu; Liu, H.-C.; Wegscheider, W.; Mani, R.G.

2014-01-01

The influence of microwave excitation on the magnetotransport properties of the high mobility two-dimensional electron system (2DES) in the GaAs/AlGaAs heterostructure system is investigated by exploring (a) the dependence of the amplitude of the microwave-induced magnetoresistance-oscillations on the polarization direction of the linearly polarized microwaves and (b) the microwave reflection from the 2DES. The polarization study indicates that the amplitude of the magnetoresistance oscillations is remarkably responsive to the relative orientation between the linearly polarized microwaves and the current-axis in the specimen. At low microwave power, P, experiments indicate a strong sinusoidal variation in the diagonal resistance R xx vs. θ at the oscillatory extrema of the microwave-induced magnetoresistance oscillations. The reflection study indicates strong correlations between the microwave induced magnetoresistance oscillations and oscillatory features in the microwave reflection in a concurrent measurement of the magnetoresistance and the microwave magnetoreflection from the 2DES. The correlations are followed as a function of the microwave frequency and the microwave power, and the results are reported

Interaction of microwave radiation with the high mobility two-dimensional electron system in GaAs/AlGaAs heterostructures

Energy Technology Data Exchange (ETDEWEB)

Ramanayaka, A.N.; Ye, Tianyu; Liu, H.-C. [Department of Physics and Astronomy, Georgia State University, Atlanta, GA 30303 (United States); Wegscheider, W. [Laboratorium fuer Festkoerperphysik, ETH Zurich, 8093 Zurich (Switzerland); Mani, R.G., E-mail: rmani@gsu.edu [Department of Physics and Astronomy, Georgia State University, Atlanta, GA 30303 (United States)

2014-11-15

The influence of microwave excitation on the magnetotransport properties of the high mobility two-dimensional electron system (2DES) in the GaAs/AlGaAs heterostructure system is investigated by exploring (a) the dependence of the amplitude of the microwave-induced magnetoresistance-oscillations on the polarization direction of the linearly polarized microwaves and (b) the microwave reflection from the 2DES. The polarization study indicates that the amplitude of the magnetoresistance oscillations is remarkably responsive to the relative orientation between the linearly polarized microwaves and the current-axis in the specimen. At low microwave power, P, experiments indicate a strong sinusoidal variation in the diagonal resistance R{sub xx} vs. θ at the oscillatory extrema of the microwave-induced magnetoresistance oscillations. The reflection study indicates strong correlations between the microwave induced magnetoresistance oscillations and oscillatory features in the microwave reflection in a concurrent measurement of the magnetoresistance and the microwave magnetoreflection from the 2DES. The correlations are followed as a function of the microwave frequency and the microwave power, and the results are reported.

Printable Transfer-Free and Wafer-Size MoS2/Graphene van der Waals Heterostructures for High-Performance Photodetection.

Science.gov (United States)

Liu, Qingfeng; Cook, Brent; Gong, Maogang; Gong, Youpin; Ewing, Dan; Casper, Matthew; Stramel, Alex; Wu, Judy

2017-04-12

Two-dimensional (2D) MoS 2 /graphene van der Waals heterostructures integrate the superior light-solid interaction in MoS 2 and charge mobility in graphene for high-performance optoelectronic devices. Key to the device performance lies in a clean MoS 2 /graphene interface to facilitate efficient transfer of photogenerated charges. Here, we report a printable and transfer-free process for fabrication of wafer-size MoS 2 /graphene van der Waals heterostructures obtained using a metal-free-grown graphene, followed by low-temperature growth of MoS 2 from the printed thin film of ammonium thiomolybdate on graphene. The photodetectors based on the transfer-free MoS 2 /graphene heterostructures exhibit extraordinary short photoresponse rise/decay times of 20/30 ms, which are significantly faster than those of the previously reported MoS 2 /transferred-graphene photodetectors (0.28-1.5 s). In addition, a high photoresponsivity of up to 835 mA/W was observed in the visible spectrum on such transfer-free MoS 2 /graphene heterostructures, which is much higher than that of the reported photodetectors based on the exfoliated layered MoS 2 (0.42 mA/W), the graphene (6.1 mA/W), and transfer-free MoS 2 /graphene/SiC heterostructures (∼40 mA/W). The enhanced performance is attributed to the clean interface on the transfer-free MoS 2 /graphene heterostructures. This printable and transfer-free process paves the way for large-scale commercial applications of the emerging 2D heterostructures in optoelectronics and sensors.

Influence of the electric polarization on carrier transport and recombinaton dynamics in ZnO-based heterostructures

Energy Technology Data Exchange (ETDEWEB)

Brandt, Matthias

2010-08-16

The present thesis deals with the influence of the electric polarization on properties of free carriers in ZnO-based semiconductor heterostructures. Thereby especially transport properties of free carriers as well as their recombination dynamics are studied. The thesis treats four main topics. The first main topic lies on the phsical properties of the applied materials, here the connection of the band gap and the lattice constant of thin Mg{sub x}Zn{sub 1-x}O films and their magnesium content is described. Furthermore the morphology of such films is discussed. Different substrates and deposition conditions are thereby detailedly considered. The second main topic treats the properties of undoped and phosphorus doped thin ZnO and Mg{sub x}Zn{sub 1-x}O films. The structural, transport, and luminescence properties are here compared and conclusions drawn on the growth conditions. In the third main topic quantum effects on ZnO/Mg{sub x}Zn{sub 1-x}O interfaces are treated. Hereby especially the influence of the electric polarization is considered. The presence of a two-dimensional electron gas is proved, and the necessary conditions for the generation of the so-called confined Stark effect are explained. Especially the growth-relevant parameters are considered. The fourth main topic represent coupling phenomena in ZnO/BaTiO{sub 3} heterostructures. Thereby first the experimentally observed properties of different heterostructures are shown, which were grown on different substrates. Here structural and transport properties hold the spotlight. A model for the description of the formation of space-charge zones in such heterostructures is introduced and applied for the description of the experimental results. The usefulness of the ferroelectric properties of the material BaTiO{sub 3} in combination with semiconducting ZnO were studied. For this ferroelectric field effect transistors were fabricated under application of both materials. The principle suitedness of the

Low temperature growth of Co{sub 2}MnSi films on diamond semiconductors by ion-beam assisted sputtering

Energy Technology Data Exchange (ETDEWEB)

Nishiwaki, M.; Ueda, K., E-mail: k-ueda@numse.nagoya-u.ac.jp; Asano, H. [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)

2015-05-07

High quality Schottky junctions using Co{sub 2}MnSi/diamond heterostructures were fabricated. Low temperature growth at ∼300–400 °C by using ion-beam assisted sputtering (IBAS) was necessary to obtain abrupt Co{sub 2}MnSi/diamond interfaces. Only the Co{sub 2}MnSi films formed at ∼300–400 °C showed both saturation magnetization comparable to the bulk values and large negative anisotropic magnetoresistance, which suggests half-metallic nature of the Co{sub 2}MnSi films, of ∼0.3% at 10 K. Schottky junctions formed using the Co{sub 2}MnSi films showed clear rectification properties with rectification ratio of more than 10{sup 7} with Schottky barrier heights of ∼0.8 eV and ideality factors (n) of ∼1.2. These results indicate that Co{sub 2}MnSi films formed at ∼300–400 °C by IBAS are a promising spin source for spin injection into diamond semiconductors.

A splitting scheme based on the space-time CE/SE method for solving multi-dimensional hydrodynamical models of semiconductor devices

Science.gov (United States)

Nisar, Ubaid Ahmed; Ashraf, Waqas; Qamar, Shamsul

2016-08-01

Numerical solutions of the hydrodynamical model of semiconductor devices are presented in one and two-space dimension. The model describes the charge transport in semiconductor devices. Mathematically, the models can be written as a convection-diffusion type system with a right hand side describing the relaxation effects and interaction with a self consistent electric field. The proposed numerical scheme is a splitting scheme based on the conservation element and solution element (CE/SE) method for hyperbolic step, and a semi-implicit scheme for the relaxation step. The numerical results of the suggested scheme are compared with the splitting scheme based on Nessyahu-Tadmor (NT) central scheme for convection step and the same semi-implicit scheme for the relaxation step. The effects of various parameters such as low field mobility, device length, lattice temperature and voltages for one-space dimensional hydrodynamic model are explored to further validate the generic applicability of the CE/SE method for the current model equations. A two dimensional simulation is also performed by CE/SE method for a MESFET device, producing results in good agreement with those obtained by NT-central scheme.

Semiconductor inversion contact - a new heterogeneous structure with two-dimensional zero-mass electron gas

International Nuclear Information System (INIS)

Volkov, B.A.; Pankratov, O.A.

1986-01-01

Semiconductor inversion junction, presenting the contact of materials in which energy levels corresponding to band edges are mutually inverted. At that, the symmetry of wave function of conductivity band in one material coincides with the symmetry of valence band of the other and vice versa. Specificity of the inversion contact is determined by the presence of electron states independent of the transition band type, which are similar to soliton ones in one-dimensional systems. In the region of the junction the states are characterized by linear massless spectrum nondegenerate in spin. Energy spectrum of the inversion junction for semiconductors of the Pb 1-x Sn y Te x type is considered

Study of interface properties in LaAlO3/SrTiO3 heterostructures

International Nuclear Information System (INIS)

Thiel, Stefan Patrick

2009-01-01

Interface effects, which play a crucial role in semiconductors, are also important in oxides. Over the last years several oxide heterostructures were investigated with interface properties, which are not found in the bulk properties of the constituting materials. An exciting example is the interface between the two oxides Lanthanumaluminate (LAO) and Strontiumtitanate (STO) which was investigated in this work. Both materials are band-insulators, however a conducting layer can form at the interface, a so called quasi-two-dimensional electron gas (q2-DEG). After a brief introduction to this heterostructure the sample-preparation and characterization is described, and subsequently different projects are reported in detail. The investigation of the electronic transport properties as a function of the LAO film thickness revealed a transition from insulating to conducting behavior if the films exceed a critical thickness of 3 unit cells (uc). By electric field effect the conductivity of the interface can be tuned to a large extent. In samples with 3 uc of LAO a metal-insulator-transition can be induced. To be able to investigate defined structures a novel patterning technique was developed in the course of this thesis, which is based on the variation of the thickness of the epitaxial LAO. At 200 mK the q2-DEG condenses into a superconducting ground state. Investigations on bicrystalline samples reveal that the conducting interface is strongly influenced by dislocations in the STO substrate. (orig.)

2D lateral heterostructures of group-III monochalcogenide: Potential photovoltaic applications

Science.gov (United States)

Cheng, Kai; Guo, Yu; Han, Nannan; Jiang, Xue; Zhang, Junfeng; Ahuja, Rajeev; Su, Yan; Zhao, Jijun

2018-04-01

Solar photovoltaics provides a practical and sustainable solution to the increasing global energy demand. Using first-principles calculations, we investigate the energetics and electronic properties of two-dimensional lateral heterostructures by group-III monochalcogenides and explore their potential applications in photovoltaics. The band structures and formation energies from supercell calculations demonstrate that these heterostructures retain semiconducting behavior and might be synthesized in laboratory using the chemical vapor deposition technique. According to the computed band offsets, most of the heterojunctions belong to type II band alignment, which can prevent the recombination of electron-hole pairs. Besides, the electronic properties of these lateral heterostructures can be effectively tailored by the number of layers, leading to a high theoretical power conversion efficiency over 20%.

Tunneling conductance in semiconductor-superconductor hybrid structures

Science.gov (United States)

Stenger, John; Stanescu, Tudor D.

2017-12-01

We study the differential conductance for charge tunneling into a semiconductor wire-superconductor hybrid structure, which is actively investigated as a possible scheme for realizing topological superconductivity and Majorana zero modes. The calculations are done based on a tight-binding model of the heterostructure using both a Blonder-Tinkham-Klapwijk approach and a Keldysh nonequilibrium Green's function method. The dependence of various tunneling conductance features on the coupling strength between the semiconductor and the superconductor, the tunnel barrier height, and temperature is systematically investigated. We find that treating the parent superconductor as an active component of the system, rather than a passive source of Cooper pairs, has qualitative consequences regarding the low-energy behavior of the differential conductance. In particular, the presence of subgap states in the parent superconductor, due to disorder and finite magnetic fields, leads to characteristic particle-hole asymmetric features and to the breakdown of the quantization of the zero-bias peak associated with the presence of Majorana zero modes localized at the ends of the wire. The implications of these findings for the effort toward the realization of Majorana bound states with true non-Abelian properties are discussed.

Dimensional optimization of nanowire--complementary metal oxide--semiconductor inverter.

Science.gov (United States)

Hashim, Yasir; Sidek, Othman

2013-01-01

This study is the first to demonstrate dimensional optimization of nanowire-complementary metal-oxide-semiconductor inverter. Noise margins and inflection voltage of transfer characteristics are used as limiting factors in this optimization. Results indicate that optimization depends on both dimensions ratio and digital voltage level (Vdd). Diameter optimization reveals that when Vdd increases, the optimized value of (Dp/Dn) decreases. Channel length optimization results show that when Vdd increases, the optimized value of Ln decreases and that of (Lp/Ln) increases. Dimension ratio optimization reveals that when Vdd increases, the optimized value of Kp/Kn decreases, and silicon nanowire transistor with suitable dimensions (higher Dp and Ln with lower Lp and Dn) can be fabricated.

Morphology induced photo-degradation study of low temperature, chemically derived ZnO/SnO{sub 2} heterostructure

Energy Technology Data Exchange (ETDEWEB)

Pal, Shreyasi, E-mail: Shreyasi.tua@gamil.com; Maiti, Soumen; Chattopadhyay, Kalyan Kumar, E-mail: kalyan-chattopadhyay@yahoo.com [Thin Films and Nanoscience Laboratory, Department of Physics, Jadavpur University, Kolkata 700032 (India)

2016-05-06

Rational construction of heterostructure is a key pathway to pursue highly active photocatalysts that also offers prospects to explore the relationship between structural aspect and photocatalytic efficiency. Here, we adopted a two-step wet chemical protocol for decoration of ZnO nanowires with SnO{sub 2} nanoclusters. ZnO nanowires were prepared by one pot ambient conditioned synthesis from commercial zinc powder. In sequence, synthesized ZnO nanowires were engineered with varying quantity SnO{sub 2} nanoclusters via low temperature hydrothermal method. Environmental remediation through catalytic activity of the samples was inspected taking two dyes having different ionic character (Methyl Orange and Rhodamine B) under UV irradiation where the optimized hybrid displayed better performance than mono component oxides. Enhancement in catalytic performance could be enlightened by the heterostructure formation at the ZnO/SnO{sub 2} interface which in turns prolonged photogenerated carrier separation and extend the photo response range. Furthermore, the photocatalysis performance by heterostructure could be recycled for several times without noticeable decrease in their catalytic activity.

Facile synthesis of hierarchical Ag3PO4/TiO2 nanofiber heterostructures with highly enhanced visible light photocatalytic properties

Science.gov (United States)

Xie, Jinlei; Yang, Yefeng; He, Haiping; Cheng, Ding; Mao, Minmin; Jiang, Qinxu; Song, Lixin; Xiong, Jie

2015-11-01

Heterostructured semiconductor nanostructures have provoked great interest in the areas of energy, environment and catalysis. Herein, we report a novel hierarchical Ag3PO4/TiO2 heterostructure consisting of nearly spherical Ag3PO4 particles firmly coupled on the surface of TiO2 nanofibers (NFs). The construction of Ag3PO4/TiO2 heterostructure with tailored morphologies, compositions and optical properties was simply achieved via a facile and green synthetic strategy involving the electrospinning and solution-based processes. Owing to the synergetic effects of the components, the resulting hybrid heterostructures exhibited much improved visible light photocatalytic performance, which could degrade the RhB dye completely in 7.5 min. In addition, the coupling of Ag3PO4 particles with UV-light-sensitive TiO2 NFs enabled full utilization of solar energy and less consumption of noble metals, significantly appealing for their practical use in new energy sources and environmental issues. The developed synthetic strategy was considered to be applicable for the rational design and construction of other heterostructured catalysts.

Holstein polaron in a valley-degenerate two-dimensional semiconductor.

Science.gov (United States)

Kang, Mingu; Jung, Sung Won; Shin, Woo Jong; Sohn, Yeongsup; Ryu, Sae Hee; Kim, Timur K; Hoesch, Moritz; Kim, Keun Su

2018-05-28

Two-dimensional (2D) crystals have emerged as a class of materials with tunable carrier density 1 . Carrier doping to 2D semiconductors can be used to modulate many-body interactions 2 and to explore novel composite particles. The Holstein polaron is a small composite particle of an electron that carries a cloud of self-induced lattice deformation (or phonons) 3-5 , which has been proposed to play a key role in high-temperature superconductivity 6 and carrier mobility in devices 7 . Here we report the discovery of Holstein polarons in a surface-doped layered semiconductor, MoS 2 , in which a puzzling 2D superconducting dome with the critical temperature of 12 K was found recently 8-11 . Using a high-resolution band mapping of charge carriers, we found strong band renormalizations collectively identified as a hitherto unobserved spectral function of Holstein polarons 12-18 . The short-range nature of electron-phonon (e-ph) coupling in MoS 2 can be explained by its valley degeneracy, which enables strong intervalley coupling mediated by acoustic phonons. The coupling strength is found to increase gradually along the superconducting dome up to the intermediate regime, which suggests a bipolaronic pairing in the 2D superconductivity.

Tunable band gaps in graphene/GaN van der Waals heterostructures

International Nuclear Information System (INIS)

Huang, Le; Kang, Jun; Li, Yan; Li, Jingbo; Yue, Qu

2014-01-01

Van der Waals (vdW) heterostructures consisting of graphene and other two-dimensional materials provide good opportunities for achieving desired electronic and optoelectronic properties. Here, we focus on vdW heterostructures composed of graphene and gallium nitride (GaN). Using density functional theory, we perform a systematic study on the structural and electronic properties of heterostructures consisting of graphene and GaN. Small band gaps are opened up at or near the Γ point of the Brillouin zone for all of the heterostructures. We also investigate the effect of the stacking sequence and electric fields on their electronic properties. Our results show that the tunability of the band gap is sensitive to the stacking sequence in bilayer-graphene-based heterostructures. In particular, in the case of graphene/graphene/GaN, a band gap of up to 334 meV is obtained under a perpendicular electric field. The band gap of bilayer graphene between GaN sheets (GaN/graphene/graphene/GaN) shows similar tunability, and increases to 217 meV with the perpendicular electric field reaching 0.8 V Å  − 1 . (paper)

Control of polarization and dipole moment in low-dimensional semiconductor nanostructures

International Nuclear Information System (INIS)

Li, L. H.; Ridha, P.; Mexis, M.; Smowton, P. M.; Blood, P.; Bozkurt, M.; Koenraad, P. M.; Patriarche, G.; Fiore, A.

2009-01-01

We demonstrate the control of polarization and dipole moment in semiconductor nanostructures, through nanoscale engineering of shape and composition. Rodlike nanostructures, elongated along the growth direction, are obtained by molecular beam epitaxial growth. By varying the aspect ratio and compositional contrast between the rod and the surrounding matrix, we rotate the polarization of the dominant interband transition from transverse-electric to transverse-magnetic, and modify the dipole moment producing a radical change in the voltage dependence of absorption spectra. This opens the way to the optimization of quantum dot amplifiers and electro-optical modulators.

Novel electronic properties of a new MoS{sub 2}/TiO{sub 2} heterostructure and potential applications in solar cells and photocatalysis

Energy Technology Data Exchange (ETDEWEB)

Li, Yanhua [State Key Laboratory of Coal Disaster Dynamics and Control, Department of Applied Physics, Chongqing University, Chongqing 400044 (China); Cai, Congzhong, E-mail: czcai@cqu.edu.cn [State Key Laboratory of Coal Disaster Dynamics and Control, Department of Applied Physics, Chongqing University, Chongqing 400044 (China); Gu, Yonghong [State Key Laboratory of Coal Disaster Dynamics and Control, Department of Applied Physics, Chongqing University, Chongqing 400044 (China); Chongqing Key Laboratory on Optoelectronic Functional Materials, Chongqing Normal University, Chongqing 401331 (China); Cheng, Wende [State Key Laboratory of Coal Disaster Dynamics and Control, Department of Applied Physics, Chongqing University, Chongqing 400044 (China); Department of Physics, Chongqing University of Science and Technology, Chongqing 401331 (China); Xiong, Wen [Department of Physics, Chongqing University, Chongqing 401331 (China); Zhao, Chengjun [State Key Laboratory of Coal Disaster Dynamics and Control, Department of Applied Physics, Chongqing University, Chongqing 400044 (China)

2017-08-31

Highlights: • The Moiré patterns of a new MoS{sub 2}/TiO{sub 2} heterostructure are investigated. • The novel electronic properties of the new heterostructure are discovered. • The MoS{sub 2}/TiO{sub 2} superlattice is found to have similar electronic properties to the bilayer heterostructure. • Two novel design schemes based on the MoS{sub 2}/TiO{sub 2} heterostructure and superlattice are proposed for a solar cell and photocatalyst, respectively. - Abstract: The structural and electronic properties of two-dimensional (2D) MoS{sub 2}/TiO{sub 2} heterostructure with a special configuration of Moiré pattern have been investigated for the first time using first-principles methods with van der Waals correction. It is found that the new van der Waals heterostructure is of a type-II band alignment between the MoS{sub 2} and TiO{sub 2} layers, and the electronic structures of monolayer MoS{sub 2} and 2D TiO{sub 2} are well retained in their respective layers due to a weak interlayer coupling, which suggests that the heterostructure may have potential applications in many fields such as photoelectric devices, photocatalysis, energy conversion and storage, etc. Meanwhile, the heterostructure can also provide an ideal platform of two-dimensional electron gas (2DEG) and two-dimensional hole gas (2DHG) for fundamental research such as spin Hall effect, etc. In addition, it is discovered that the corresponding MoS{sub 2}/TiO{sub 2} superlattice also has similar electronic properties to MoS{sub 2}/TiO{sub 2} bilayer heterostructure. Furthermore, two novel design schemes based on the MoS{sub 2}/TiO{sub 2} heterostructure and superlattice are proposed for a solar cell and photocatalyst, respectively.

Low dimensionality semiconductors: modelling of excitons via a fractional-dimensional space

Science.gov (United States)

Christol, P.; Lefebvre, P.; Mathieu, H.

1993-09-01

An interaction space with a fractionnal dimension is used to calculate in a simple way the binding energies of excitons confined in quantum wells, superlattices and quantum well wires. A very simple formulation provides this energy versus the non-integer dimensionality of the physical environment of the electron-hole pair. The problem then comes to determining the dimensionality α. We show that the latter can be expressed from the characteristics of the microstructure. α continuously varies from 3 (bulk material) to 2 for quantum wells and superlattices, and from 3 to 1 for quantum well wires. Quite a fair agreement is obtained with other theoretical calculations and experimental data, and this model coherently describes both three-dimensional limiting cases for quantum wells (L_wrightarrow 0 and L_wrightarrow infty) and the whole range of periods of the superlattice. Such a simple model presents a great interest for spectroscopists though it does not aim to compete with accurate but often tedious variational calculations. Nous utilisons un espace des interactions doté d'une dimension fractionnaire pour calculer simplement l'énergie de liaison des excitons confinés dans les puits quantiques, superréseaux et fils quantiques. Une formulation très simple donne cette énergie en fonction de la dimensionalité non-entière de l'environnement physique de la paire électron-trou. Le problème revient alors à déterminer cette dimensionalité α, dont nous montrons qu'une expression peut être déduite des caractéristiques de la microstructure. α varie continûment de 3 (matériau massif) à 2 pour un puits quantique ou un superréseau, et de 3 à 1 pour un fil quantique, selon le confinement du mouvement des porteurs. Les comparaisons avec d'autres calculs théoriques et données expérimentales sont toujours très convenables, et cette théorie décrit d'une façon cohérente les limites tridimensionnelles du puits quantique (L_wrightarrow 0 et L

Observation of the transition from diffusive regime to ballistic regime of the 2DEG transport property in Al xGa1-xN/GaN heterostructures

International Nuclear Information System (INIS)

Han, K.; Shen, B.; Tang, N.; Tang, Y.Q.; He, X.W.; Qin, Z.X.; Yang, Z.J.; Zhang, G.Y.; Lin, T.; Zhu, B.; Zhou, W.Z.; Chu, J.H.

2007-01-01

Electron-electron interaction effect of the two-dimensional electron gas (2DEG) in Al x Ga 1-x N/GaN heterostructures has been investigated by means of magnetotransport measurements at low temperatures. From the temperature dependence of the longitudinal conductivity of the heterostructures, a clear transition region has been observed. Based on the theoretical analysis, we conclude that this region corresponds to the transition from the diffusive regime to the ballistic regime of the 2DEG transport property. The interaction constant is determined to be -0.423, which is consistent with the theoretical prediction. However, the critical temperature for the transition, which is 8 K in Al x Ga 1-x N/GaN heterostructures, is much higher than the theoretical prediction

Low-Dimensional-Networked Metal Halide Perovskites: The Next Big Thing

KAUST Repository

Saidaminov, Makhsud I.

2017-03-03

Low-dimensional-networked (low-DN) perovskite derivatives are bulk quantum materials in which charge carriers are localized within ordered metal halide sheets, rods, or clusters that are separated by cationic lattices. After two decades of hibernation, this class of semiconductors reemerged in the past two years, largely catalyzed by the interest in alternative, more stable absorbers to CH3NH3PbI3-type perovskites in photovoltaics. Whether low-DN perovskites will surpass other photovoltaic technologies remains to be seen, but their impressively high photo- and electroluminescence yields have already set new benchmarks in light emission applications. Here we offer our perspective on the most exciting advances in materials design of low-DN perovskites for energy- and optoelectronic-related applications. The next few years will usher in an explosive growth in this tribe of quantum materials, as only a few members have been synthesized, while the potential library of compositions and structures is believed to be much larger and is yet to be discovered.

Tunable intraparticle frameworks for creating complex heterostructured nanoparticle libraries

Science.gov (United States)

Fenton, Julie L.; Steimle, Benjamin C.; Schaak, Raymond E.

2018-05-01

Complex heterostructured nanoparticles with precisely defined materials and interfaces are important for many applications. However, rationally incorporating such features into nanoparticles with rigorous morphology control remains a synthetic bottleneck. We define a modular divergent synthesis strategy that progressively transforms simple nanoparticle synthons into increasingly sophisticated products. We introduce a series of tunable interfaces into zero-, one-, and two-dimensional copper sulfide nanoparticles using cation exchange reactions. Subsequent manipulation of these intraparticle frameworks yielded a library of 47 distinct heterostructured metal sulfide derivatives, including particles that contain asymmetric, patchy, porous, and sculpted nanoarchitectures. This generalizable mix-and-match strategy provides predictable retrosynthetic pathways to complex nanoparticle features that are otherwise inaccessible.

Magnetic engineering in InSe/black-phosphorus heterostructure by transition-metal-atom Sc-Zn doping in the van der Waals gap

Science.gov (United States)

Ding, Yi-min; Shi, Jun-jie; Zhang, Min; Zhu, Yao-hui; Wu, Meng; Wang, Hui; Cen, Yu-lang; Guo, Wen-hui; Pan, Shu-hang

2018-07-01

Within the framework of the spin-polarized density-functional theory, we have studied the electronic and magnetic properties of InSe/black-phosphorus (BP) heterostructure doped with 3d transition-metal (TM) atoms from Sc to Zn. The calculated binding energies show that TM-atom doping in the van der Waals (vdW) gap of InSe/BP heterostructure is energetically favorable. Our results indicate that magnetic moments are induced in the Sc-, Ti-, V-, Cr-, Mn- and Co-doped InSe/BP heterostructures due to the existence of non-bonding 3d electrons. The Ni-, Cu- and Zn-doped InSe/BP heterostructures still show nonmagnetic semiconductor characteristics. Furthermore, in the Fe-doped InSe/BP heterostructure, the half-metal property is found and a high spin polarization of 100% at the Fermi level is achieved. The Cr-doped InSe/BP has the largest magnetic moment of 4.9 μB. The Sc-, Ti-, V-, Cr- and Mn-doped InSe/BP heterostructures exhibit antiferromagnetic ground state. Moreover, the Fe- and Co-doped systems display a weak ferromagnetic and paramagnetic coupling, respectively. Our studies demonstrate that the TM doping in the vdW gap of InSe/BP heterostructure is an effective way to modify its electronic and magnetic properties.

Quasi-one-dimensional metals on semiconductor surfaces with defects

International Nuclear Information System (INIS)

Hasegawa, Shuji

2010-01-01

Several examples are known in which massive arrays of metal atomic chains are formed on semiconductor surfaces that show quasi-one-dimensional metallic electronic structures. In this review, Au chains on Si(557) and Si(553) surfaces, and In chains on Si(111) surfaces, are introduced and discussed with regard to the physical properties determined by experimental data from scanning tunneling microscopy (STM), angle-resolved photoemission spectroscopy (ARPES) and electrical conductivity measurements. They show quasi-one-dimensional Fermi surfaces and parabolic band dispersion along the chains. All of them are known from STM and ARPES to exhibit metal-insulator transitions by cooling and charge-density-wave formation due to Peierls instability of the metallic chains. The electrical conductivity, however, reveals the metal-insulator transition only on the less-defective surfaces (Si(553)-Au and Si(111)-In), but not on a more-defective surface (Si(557)-Au). The latter shows an insulating character over the whole temperature range. Compared with the electronic structure (Fermi surfaces and band dispersions), the transport property is more sensitive to the defects. With an increase in defect density, the conductivity only along the metal atomic chains was significantly reduced, showing that atomic-scale point defects decisively interrupt the electrical transport along the atomic chains and hide the intrinsic property of transport in quasi-one-dimensional systems.

Two-dimensional collective electron magnetotransport, oscillations, and chaos in a semiconductor superlattice.

Science.gov (United States)

Bonilla, L L; Carretero, M; Segura, A

2017-12-01

When quantized, traces of classically chaotic single-particle systems include eigenvalue statistics and scars in eigenfuntions. Since 2001, many theoretical and experimental works have argued that classically chaotic single-electron dynamics influences and controls collective electron transport. For transport in semiconductor superlattices under tilted magnetic and electric fields, these theories rely on a reduction to a one-dimensional self-consistent drift model. A two-dimensional theory based on self-consistent Boltzmann transport does not support that single-electron chaos influences collective transport. This theory agrees with existing experimental evidence of current self-oscillations, predicts spontaneous collective chaos via a period doubling scenario, and could be tested unambiguously by measuring the electric potential inside the superlattice under a tilted magnetic field.

Two-dimensional collective electron magnetotransport, oscillations, and chaos in a semiconductor superlattice

Science.gov (United States)

Bonilla, L. L.; Carretero, M.; Segura, A.

2017-12-01

When quantized, traces of classically chaotic single-particle systems include eigenvalue statistics and scars in eigenfuntions. Since 2001, many theoretical and experimental works have argued that classically chaotic single-electron dynamics influences and controls collective electron transport. For transport in semiconductor superlattices under tilted magnetic and electric fields, these theories rely on a reduction to a one-dimensional self-consistent drift model. A two-dimensional theory based on self-consistent Boltzmann transport does not support that single-electron chaos influences collective transport. This theory agrees with existing experimental evidence of current self-oscillations, predicts spontaneous collective chaos via a period doubling scenario, and could be tested unambiguously by measuring the electric potential inside the superlattice under a tilted magnetic field.

Controlled growth of high-density CdS and CdSe nanorod arrays on selective facets of two-dimensional semiconductor nanoplates

KAUST Repository

Wu, Xue-Jun; Chen, Junze; Tan, Chaoliang; Zhu, Yihan; Han, Yu; Zhang, Hua

2016-01-01

. Here, we report a seeded growth approach for the controlled epitaxial growth of three types of hierarchical one-dimensional (1D)/two-dimensional (2D) nanostructures, where nanorod arrays of II-VI semiconductor CdS or CdSe are grown on the selective

Superconducting cuprate heterostructures for hot electron bolometers

Science.gov (United States)

Wen, B.; Yakobov, R.; Vitkalov, S. A.; Sergeev, A.

2013-11-01

Transport properties of the resistive state of quasi-two dimensional superconducting heterostructures containing ultrathin La2-xSrxCuO4 layers synthesized using molecular beam epitaxy are studied. The electron transport exhibits strong deviation from Ohm's law, δV ˜γI3, with a coefficient γ(T) that correlates with the temperature variation of the resistivity dρ /dT. Close to the normal state, analysis of the nonlinear behavior in terms of electron heating yields an electron-phonon thermal conductance per unit area ge -ph≈1 W/K cm2 at T = 20 K, one-two orders of magnitude smaller than in typical superconductors. This makes superconducting LaSrCuO heterostructures to be attractive candidate for the next generation of hot electron bolometers with greatly improved sensitivity.

Superconducting cuprate heterostructures for hot electron bolometers

International Nuclear Information System (INIS)

Wen, B.; Yakobov, R.; Vitkalov, S. A.; Sergeev, A.

2013-01-01

Transport properties of the resistive state of quasi-two dimensional superconducting heterostructures containing ultrathin La 2−x Sr x CuO 4 layers synthesized using molecular beam epitaxy are studied. The electron transport exhibits strong deviation from Ohm's law, δV∼γI 3 , with a coefficient γ(T) that correlates with the temperature variation of the resistivity dρ/dT. Close to the normal state, analysis of the nonlinear behavior in terms of electron heating yields an electron-phonon thermal conductance per unit area g e−ph ≈1 W/K cm 2 at T = 20 K, one-two orders of magnitude smaller than in typical superconductors. This makes superconducting LaSrCuO heterostructures to be attractive candidate for the next generation of hot electron bolometers with greatly improved sensitivity

Vertical heterostructures of MoS2 and graphene nanoribbons grown by two-step chemical vapor deposition for high-gain photodetectors.

Science.gov (United States)

Yunus, Rozan Mohamad; Endo, Hiroko; Tsuji, Masaharu; Ago, Hiroki

2015-10-14

Heterostructures of two-dimensional (2D) layered materials have attracted growing interest due to their unique properties and possible applications in electronics, photonics, and energy. Reduction of the dimensionality from 2D to one-dimensional (1D), such as graphene nanoribbons (GNRs), is also interesting due to the electron confinement effect and unique edge effects. Here, we demonstrate a bottom-up approach to grow vertical heterostructures of MoS2 and GNRs by a two-step chemical vapor deposition (CVD) method. Single-layer GNRs were first grown by ambient pressure CVD on an epitaxial Cu(100) film, followed by the second CVD process to grow MoS2 over the GNRs. The MoS2 layer was found to grow preferentially on the GNR surface, while the coverage could be further tuned by adjusting the growth conditions. The MoS2/GNR nanostructures show clear photosensitivity to visible light with an optical response much higher than that of a 2D MoS2/graphene heterostructure. The ability to grow a novel 1D heterostructure of layered materials by a bottom-up CVD approach will open up a new avenue to expand the dimensionality of the material synthesis and applications.

Improved thermal stability and hole mobilities in a strained-Si/strained-Si1-yGe y/strained-Si heterostructure grown on a relaxed Si1-xGe x buffer

International Nuclear Information System (INIS)

Gupta, Saurabh; Lee, Minjoo L.; Isaacson, David M.; Fitzgerald, Eugene A.

2005-01-01

A dual channel heterostructure consisting of strained-Si/strained-Si 1-y Ge y on relaxed Si 1-x Ge x (y > x), provides a platform for fabricating metal-oxide-semiconductor field-effect transistors (MOSFETs) with high hole mobilities (μ eff ) which depend directly on Ge concentration and strain in the strained-Si 1-y Ge y layer. Ge out-diffuses from the strained-Si 1-y Ge y layer into relaxed Si 1-x Ge x during high temperature processing, reducing peak Ge concentration and strain in the strained-Si 1-y Ge y layer and degrades hole μ eff in these dual channel heterostructures. A heterostructure consisting of strained-Si/strained-Si 1-y Ge y /strained-Si, referred to as a trilayer heterostructure, grown on relaxed Si 1-x Ge x has much reduced Ge out-flux from the strained-Si 1-y Ge y layer and retains higher μ eff after thermal processing. Improved hole μ eff over similar dual channel heterostructures is also observed in this heterostructure. This could be a result of preventing the hole wavefunction tunneling into the low μ eff relaxed Si 1-x Ge x layer due to the additional valence band offset provided by the underlying strained-Si layer. A diffusion coefficient has been formulated and implemented in a finite difference scheme for predicting the thermal budget of the strained SiGe heterostructures. It shows that the trilayer heterostructures have superior thermal budgets at higher Ge concentrations. Ring-shaped MOSFETs were fabricated on both platforms and subjected to various processing temperatures in order to compare the extent of μ eff reduction with thermal budget. Hole μ eff enhancements are retained to a much higher extent in a trilayer heterostructure after high temperature processing as compared to a dual channel heterostructure. The improved thermal stability and hole μ eff of a trilayer heterostructure makes it an ideal platform for fabricating high μ eff MOSFETs that can be processed over higher temperatures without significant losses in hole �

Computer-automated tuning of semiconductor double quantum dots into the single-electron regime

NARCIS (Netherlands)

Baart, T.A.; Eendebak, P.T.; Reichl, C.; Wegscheider, W.; Vandersypen, L.M.K.

2016-01-01

We report the computer-automated tuning of gate-defined semiconductor double quantum dots in GaAs heterostructures. We benchmark the algorithm by creating three double quantum dots inside a linear array of four quantum dots. The algorithm sets the correct gate voltages for all the gates to tune the

ALD-Developed Plasmonic Two-Dimensional Au-WO3-TiO2 Heterojunction Architectonics for Design of Photovoltaic Devices.

Science.gov (United States)

Karbalaei Akbari, Mohammad; Hai, Zhenyin; Wei, Zihan; Detavernier, Christophe; Solano, Eduardo; Verpoort, Francis; Zhuiykov, Serge

2018-03-28

Electrically responsive plasmonic devices, which benefit from the privilege of surface plasmon excited hot carries, have supported fascinating applications in the visible-light-assisted technologies. The properties of plasmonic devices can be tuned by controlling charge transfer. It can be attained by intentional architecturing of the metal-semiconductor (MS) interfaces. In this study, the wafer-scaled fabrication of two-dimensional (2D) TiO 2 semiconductors on the granular Au metal substrate is achieved using the atomic layer deposition (ALD) technique. The ALD-developed 2D MS heterojunctions exhibited substantial enhancement of the photoresponsivity and demonstrated the improvement of response time for 2D Au-TiO 2 -based plasmonic devices under visible light illumination. To circumvent the undesired dark current in the plasmonic devices, a 2D WO 3 nanofilm (∼0.7 nm) was employed as the intermediate layer on the MS interface to develop the metal-insulator-semiconductor (MIS) 2D heterostructure. As a result, 13.4% improvement of the external quantum efficiency was obtained for fabricated 2D Au-WO 3 -TiO 2 heterojunctions. The impedancometry measurements confirmed the modulation of charge transfer at the 2D MS interface using MIS architectonics. Broadband photoresponsivity from the UV to the visible light region was observed for Au-TiO 2 and Au-WO 3 -TiO 2 heterostructures, whereas near-infrared responsivity was not observed. Consequently, considering the versatile nature of the ALD technique, this approach can facilitate the architecturing and design of novel 2D MS and MIS heterojunctions for efficient plasmonic devices.

Electronic, Optical, and Thermal Properties of Reduced-Dimensional Semiconductors

Science.gov (United States)

Huang, Shouting

Reduced-dimensional materials have attracted tremendous attention because of their new physics and exotic properties, which are of great interests for fundamental science. More importantly, the manipulation and engineering of matter on an atomic scale yield promising applications for many fields including nanoelectronics, nanobiotechnology, environments, and renewable energy. Because of the unusual quantum confinement and enhanced surface effect of reduced-dimensional materials, traditional empirical models suffer from necessary but unreliable parameters extracted from previously-studied bulk materials. In this sense, quantitative, parameter-free approaches are highly useful for understanding properties of reduced-dimensional materials and, furthermore, predicting their novel applications. The first-principles density functional theory (DFT) is proven to be a reliable and convenient tool. In particular, recent progress in many-body perturbation theory (MBPT) makes it possible to calculate excited-state properties, e.g., quasiparticle (QP) band gap and optical excitations, by the first-principles approach based on DFT. Therefore, during my PhD study, I employed first-principles calculations based on DFT and MBPT to systematically study fundamental properties of typical reduced-dimensional semiconductors, i.e., the electronic structure, phonons, and optical excitations of core-shell nanowires (NWs) and graphene-like two-dimensional (2D) structures of current interests. First, I present first-principles studies on how to engineer band alignments of nano-sized radial heterojunctions, Si/Ge core-shell NWs. Our calculation reveals that band offsets in these one-dimensional (1D) nanostructures can be tailored by applying axial strain or varying core-shell sizes. In particular, the valence band offset can be efficiently tuned across a wide range and even be diminished via applied strain. Two mechanisms contribute to this tuning of band offsets. Furthermore, varying the

Spin-orbit controlled capacitance of a polar heterostructure

Energy Technology Data Exchange (ETDEWEB)

Steffen, Kevin; Kopp, Thilo [Center for Electronic Correlations and Magnetism, EP VI, Institute of Physics, University of Augsburg, 86135 Augsburg (Germany); Loder, Florian [Center for Electronic Correlations and Magnetism, EP VI and TP III, Institute of Physics, University of Augsburg, 86135 Augsburg (Germany)

2015-07-01

Oxide heterostructures with polar films display special electronic properties, such as the electronic reconstruction at their internal interfaces with the formation of two-dimensional metallic states. Moreover, the electrical field from the polar layers is inversion-symmetry breaking and may generate a strong Rashba spin-orbit coupling (RSOC) in the interfacial electronic system. We investigate the capacitance of a heterostructure in which a strong RSOC at a metallic interface is controlled by the electric field of a surface electrode. Such a structure is for example given by a LaAlO{sub 3} film on a SrTiO{sub 3} substrate which is gated by a top electrode. We find that due to a strong RSOC the capacitance can be larger than the classical geometric value.

Physical properties and analytical models of band-to-band tunneling in low-bandgap semiconductors

International Nuclear Information System (INIS)

Shih, Chun-Hsing; Dang Chien, Nguyen

2014-01-01

Low-bandgap semiconductors, such as InAs and InSb, are widely considered to be ideal for use in tunnel field-effect transistors to ensure sufficient on-current boosting at low voltages. This work elucidates the physical and mathematical considerations of applying conventional band-to-band tunneling models in low-bandgap semiconductors, and presents a new analytical alternative for practical use. The high-bandgap tunneling generates most at maximum field region with shortest tunnel path, whereas the low-bandgap generations occur dispersedly because of narrow tunnel barrier. The local electrical field associated with tunneling-electron numbers dominates in low-bandgap materials. This work proposes decoupled electric-field terms in the pre-exponential factor and exponential function of generation-rate expressions. Without fitting, the analytical results and approximated forms exhibit great agreements with the sophisticated forms both in high- and low-bandgap semiconductors. Neither nonlocal nor local field is appropriate to be used in numerical simulations for predicting the tunneling generations in a variety of low- and high-bandgap semiconductors

Two-dimensional confinement of heavy fermions

International Nuclear Information System (INIS)

Shishido, Hiroaki; Shibauchi, Takasada; Matsuda, Yuji; Terashima, Takahito

2010-01-01

Metallic systems with the strongest electron correlations are realized in certain rare-earth and actinide compounds whose physics are dominated by f-electrons. These materials are known as heavy fermions, so called because the effective mass of the conduction electrons is enhanced via correlation effects up to as much as several hundreds times the free electron mass. To date the electronic structure of all heavy-fermion compounds is essentially three-dimensional. Here we report on the first realization of a two-dimensional heavy-fermion system, where the dimensionality is adjusted in a controllable fashion by fabricating heterostructures using molecular beam epitaxy. The two-dimensional heavy fermion system displays striking deviations from the standard Fermi liquid low-temperature electronic properties. (author)

Semiconductor detectors in the low countries

CERN Document Server

Heijne, Erik H M

2003-01-01

Several milestones in the development of semiconductor radiation imaging detectors are attributed to scientists from the Low Countries, the Netherlands and Belgium, and a few historical details will be highlighted. The very first usable semiconductor nuclear detector was made in Utrecht, around 1943, in the form of an AgCl crystal. The earliest large-scale application of monolithic, double- sided silicon strip detectors was in the BOL experiment around 1968 at IKO, now NIKHEF, in Amsterdam. The technology developed and patented by Philips and IKO was adapted by the author and coworkers in 1980 to produce the first silicon microstrip detector used for the reconstruction of events in a CERN fixed target experiment. An avalanche of developments then led to worldwide use of silicon microstrip detectors in elementary particle physics, motivated by the capability to reconstruct particles with lifetime similar to 10**- **1**2s, which decay on sub-millimeter scale. The intensive activity in silicon detector R&D c...

Low-frequency active surface plasmon optics on semiconductors

NARCIS (Netherlands)

Gómez Rivas, J.; Kuttge, M.; Kurz, H.; Haring Bolivar, P.; Sánchez-Gil, J.A.

2006-01-01

A major challenge in the development of surface plasmon optics or plasmonics is the active control of the propagation of surface plasmon polaritons (SPPs). Here, we demonstrate the feasibility of low-frequency active plasmonics using semiconductors. We show experimentally that the Bragg scattering

Thermodynamic analysis of acetone sensing in Pd/AlGaN/GaN heterostructure Schottky diodes at low temperatures

International Nuclear Information System (INIS)

Das, Subhashis; Majumdar, Shubhankar; Kumar, Rahul; Ghosh, Saptarsi; Biswas, Dhrubes

2016-01-01

An AlGaN/GaN heterostructure based metal–semiconductor–metal symmetrically bi-directional Schottky diode sensor structure has been employed to investigate acetone sensing and to analyze thermodynamics of acetone adsorption at low temperatures. The AlGaN/GaN heterostructure has been grown by plasma-assisted molecular beam epitaxy on Si (111). Schottky diode parameters at different temperatures and acetone concentrations have been extracted from I–V characteristics. Sensitivity and change in Schottky barrier height have been studied. Optimum operating temperature has been established. Coverage of acetone adsorption sites at the AlGaN surface and the effective equilibrium rate constant of acetone adsorption have been explored to determine the endothermic nature of acetone adsorption enthalpy.

Depletion field focusing in semiconductors

NARCIS (Netherlands)

Prins, M.W.J.; Gelder, Van A.P.

1996-01-01

We calculate the three-dimensional depletion field profile in a semiconductor, for a planar semiconductor material with a spatially varying potential upon the surface, and for a tip-shaped semiconductor with a constant surface potential. The nonuniform electric field gives rise to focusing or

Controlling the interface charge density in GaN-based metal-oxide-semiconductor heterostructures by plasma oxidation of metal layers

International Nuclear Information System (INIS)

Hahn, Herwig; Kalisch, Holger; Vescan, Andrei; Pécz, Béla; Kovács, András; Heuken, Michael

2015-01-01

In recent years, investigating and engineering the oxide-semiconductor interface in GaN-based devices has come into focus. This has been driven by a large effort to increase the gate robustness and to obtain enhancement mode transistors. Since it has been shown that deep interface states act as fixed interface charge in the typical transistor operating regime, it appears desirable to intentionally incorporate negative interface charge, and thus, to allow for a positive shift in threshold voltage of transistors to realise enhancement mode behaviour. A rather new approach to obtain such negative charge is the plasma-oxidation of thin metal layers. In this study, we present transmission electron microscopy and energy dispersive X-ray spectroscopy analysis as well as electrical data for Al-, Ti-, and Zr-based thin oxide films on a GaN-based heterostructure. It is shown that the plasma-oxidised layers have a polycrystalline morphology. An interfacial amorphous oxide layer is only detectable in the case of Zr. In addition, all films exhibit net negative charge with varying densities. The Zr layer is providing a negative interface charge density of more than 1 × 10 13  cm –2 allowing to considerably shift the threshold voltage to more positive values

Two-terminal charge tunneling: Disentangling Majorana zero modes from partially separated Andreev bound states in semiconductor-superconductor heterostructures

Science.gov (United States)

Moore, Christopher; Stanescu, Tudor D.; Tewari, Sumanta

2018-04-01

We show that a pair of overlapping Majorana bound states (MBSs) forming a partially separated Andreev bound state (ps-ABS) represents a generic low-energy feature in spin-orbit-coupled semiconductor-superconductor (SM-SC) hybrid nanowire in the presence of a Zeeman field. The ps-ABS interpolates continuously between the "garden variety" ABS, which consists of two MBSs sitting on top of each other, and the topologically protected Majorana zero modes (MZMs), which are separated by a distance given by the length of the wire. The really problematic ps-ABSs consist of component MBSs separated by a distance of the order of the characteristic Majorana decay length ξ , and have nearly zero energy in a significant range of control parameters, such as the Zeeman field and chemical potential, within the topologically trivial phase. Despite being topologically trivial, such ps-ABSs can generate signatures identical to MZMs in local charge tunneling experiments. In particular, the height of the zero-bias conductance peak (ZBCP) generated by ps-ABSs has the quantized value 2 e2/h , and it can remain unchanged in an extended range of experimental parameters, such as Zeeman field and the tunnel barrier height. We illustrate the formation of such low-energy robust ps-ABSs in two experimentally relevant situations: a hybrid SM-SC system consisting of a proximitized nanowire coupled to a quantum dot and the SM-SC system in the presence of a spatially varying inhomogeneous potential. We then show that, unlike local measurements, a two-terminal experiment involving charge tunneling at both ends of the wire is capable of distinguishing between the generic ps-ABSs and the non-Abelian MZMs. While the MZMs localized at the opposite ends of the wire generate correlated differential conduction spectra, including correlations in energy splittings and critical Zeeman fields associated with the emergence of the ZBCPs, such correlations are absent if the ZBCPs are due to ps-ABSs emerging in the

Enhancement of hole mobility in InSe monolayer via an InSe and black phosphorus heterostructure.

Science.gov (United States)

Ding, Yi-Min; Shi, Jun-Jie; Xia, Congxin; Zhang, Min; Du, Juan; Huang, Pu; Wu, Meng; Wang, Hui; Cen, Yu-Lang; Pan, Shu-Hang

2017-10-05

To enhance the low hole mobility (∼40 cm 2 V -1 s -1 ) of InSe monolayer, a novel two-dimensional (2D) van der Waals heterostructure made of InSe and black phosphorus (BP) monolayers with high hole mobility (∼10 3 cm 2 V -1 s -1 ) has been constructed and its structural and electronic properties are investigated using first-principles calculations. We find that the InSe/BP heterostructure exhibits a direct band gap of 1.39 eV and type-II band alignment with electrons (holes) located in the InSe (BP) layer. The band offsets of InSe and BP are 0.78 eV for the conduction band minimum and 0.86 eV for the valence band maximum, respectively. Surprisingly, the hole mobility in the InSe/BP heterostructure exceeds 10 4 cm 2 V -1 s -1 , which is one order of magnitude larger than the hole mobility of BP and three orders larger than that of the InSe monolayer. The electron mobility is also increased to 3 × 10 3 cm 2 V -1 s -1 . The physical reason has been analyzed deeply, and a universal method is proposed to improve the carrier mobility of 2D materials by forming heterostructures with them and other 2D materials with complementary properties. The InSe/BP heterostructure can thus be widely used in nanoscale InSe-based field-effect transistors, photodetectors and photovoltaic devices due to its type-II band alignment and high carrier mobility.

Study of interface properties in LaAlO{sub 3}/SrTiO{sub 3} heterostructures

Energy Technology Data Exchange (ETDEWEB)

Thiel, Stefan Patrick

2009-02-19

Interface effects, which play a crucial role in semiconductors, are also important in oxides. Over the last years several oxide heterostructures were investigated with interface properties, which are not found in the bulk properties of the constituting materials. An exciting example is the interface between the two oxides Lanthanumaluminate (LAO) and Strontiumtitanate (STO) which was investigated in this work. Both materials are band-insulators, however a conducting layer can form at the interface, a so called quasi-two-dimensional electron gas (q2-DEG). After a brief introduction to this heterostructure the sample-preparation and characterization is described, and subsequently different projects are reported in detail. The investigation of the electronic transport properties as a function of the LAO film thickness revealed a transition from insulating to conducting behavior if the films exceed a critical thickness of 3 unit cells (uc). By electric field effect the conductivity of the interface can be tuned to a large extent. In samples with 3 uc of LAO a metal-insulator-transition can be induced. To be able to investigate defined structures a novel patterning technique was developed in the course of this thesis, which is based on the variation of the thickness of the epitaxial LAO. At 200 mK the q2-DEG condenses into a superconducting ground state. Investigations on bicrystalline samples reveal that the conducting interface is strongly influenced by dislocations in the STO substrate. (orig.)

Efficient band structure modulations in two-dimensional MnPSe3/CrSiTe3 van der Waals heterostructures

Science.gov (United States)

Pei, Qi; Wang, Xiaocha; Zou, Jijun; Mi, Wenbo

2018-05-01

As a research upsurge, van der Waals (vdW) heterostructures give rise to numerous combined merits and novel applications in nanoelectronics fields. Here, we systematically investigate the electronic structure of MnPSe3/CrSiTe3 vdW heterostructures with various stacking patterns. Then, particular attention of this work is paid on the band structure modulations in MnPSe3/CrSiTe3 vdW heterostructures via biaxial strain or electric field. Under a tensile strain, the relative band edge positions of heterostructures transform from type-I (nested) to type-II (staggered). The relocation of conduction band minimum also brings about a transition from indirect to direct band gap. Under a compressive strain, the electronic properties change from semiconducting to metallic. The physical mechanism of strain-dependent band structure may be ascribed to the shifts of the energy bands impelled by different superposition of atomic orbitals. Meanwhile, our calculations manifest that band gap values of MnPSe3/CrSiTe3 heterostructures are insensitive to the electric field. Even so, by applying a suitable intensity of negative electric field, the band alignment transition from type-I to type-II can also be realized. The efficient band structure modulations via external factors endow MnPSe3/CrSiTe3 heterostructures with great potential in novel applications, such as strain sensors, photocatalysis, spintronic and photoelectronic devices.

Critical thickness for the formation of misfit dislocations originating from prismatic slip in semipolar and nonpolar III-nitride heterostructures

KAUST Repository

Smirnov, A. M.

2016-01-20

We calculate the critical thickness for misfit dislocation (MD) formation in lattice mismatched semipolar and nonpolar III-nitride wurtzite semiconductor layers for the case of MDs originated from prismatic slip (PSMDs). It has been shown that there is a switch of stress relaxation modes from generation of basal slip originated MDs to PSMDs after the angle between c-axis in wurtzite crystal structure and the direction of semipolar growth reaches a particular value, e.g., ∼70° for Al0.13Ga0.87N/GaN (h0h̄ 1) semipolar heterostructures. This means that for some semipolar growth orientations of III-nitride heterostructures biaxial relaxation of misfit stress can be realized. The results of modeling are compared to experimental data on the onset of plastic relaxation in AlxGa1−xN/GaN heterostructures.

Tunable Electrical and Optical Characteristics in Monolayer Graphene and Few-Layer MoS2 Heterostructure Devices.

Science.gov (United States)

Rathi, Servin; Lee, Inyeal; Lim, Dongsuk; Wang, Jianwei; Ochiai, Yuichi; Aoki, Nobuyuki; Watanabe, Kenji; Taniguchi, Takashi; Lee, Gwan-Hyoung; Yu, Young-Jun; Kim, Philip; Kim, Gil-Ho

2015-08-12

Lateral and vertical two-dimensional heterostructure devices, in particular graphene-MoS2, have attracted profound interest as they offer additional functionalities over normal two-dimensional devices. Here, we have carried out electrical and optical characterization of graphene-MoS2 heterostructure. The few-layer MoS2 devices with metal electrode at one end and monolayer graphene electrode at the other end show nonlinearity in drain current with drain voltage sweep due to asymmetrical Schottky barrier height at the contacts and can be modulated with an external gate field. The doping effect of MoS2 on graphene was observed as double Dirac points in the transfer characteristics of the graphene field-effect transistor (FET) with a few-layer MoS2 overlapping the middle part of the channel, whereas the underlapping of graphene have negligible effect on MoS2 FET characteristics, which showed typical n-type behavior. The heterostructure also exhibits a strongest optical response for 520 nm wavelength, which decreases with higher wavelengths. Another distinct feature observed in the heterostructure is the peak in the photocurrent around zero gate voltage. This peak is distinguished from conventional MoS2 FETs, which show a continuous increase in photocurrent with back-gate voltage. These results offer significant insight and further enhance the understanding of the graphene-MoS2 heterostructure.

Size and strain tunable band alignment of black-blue phosphorene lateral heterostructures.

Science.gov (United States)

Li, Yan; Ma, Fei

2017-05-17

Single-element lateral heterostructures composed of black and blue phosphorene are not only free from lattice mismatch but also exhibit rich physical properties related to the seamlessly stitched interfaces, providing the building blocks for designing atomically thin devices. Using first-principles calculations, we investigate the influence of interface structure, size effect and strain engineering on the electronic structure, effective masses and band alignment of black-blue phosphorene lateral heterostructures. The lateral heterostructure with an octatomic-ring interface presents a strong metallic feature due to the interface states, while a metal-semiconductor transition takes place in the system with a hexatomic-ring interface upon hydrogen passivation. Following a reciprocal scaling law, the band gap is tuned in a wide energy range by synchronously increasing the widths of black and blue phosphorene or by only widening that of black phosphorene. Moreover, type-II band alignment is observed in the width ranges of 2.0-3.1 nm and 3.7-4.2 nm, out of which it is type-I. However, the band gap and effective masses show small changes if only the width of blue phosphorene is altered. When the lateral heterostructure is tensile loaded, the effective mass ratio of hole to electron is enlarged by an order of magnitude at a strain of 4% along the zigzag direction. Meanwhile, the band alignment undergoes a crossover from type-I to type-II at a strain of 2%, facilitating efficient electron-hole separation for light detection and harvesting.

In situ catalytic growth of large-area multilayered graphene/MoS2 heterostructures

OpenAIRE

Fu, Wei; Du, Fei-Hu; Su, Juan; Li, Xin-Hao; Wei, Xiao; Ye, Tian-Nan; Wang, Kai-Xue; Chen, Jie-Sheng

2014-01-01

Stacking various two-dimensional atomic crystals on top of each other is a feasible approach to create unique multilayered heterostructures with desired properties. Herein for the first time, we present a controlled preparation of large-area graphene/MoS2 heterostructures via a simple heating procedure on Mo-oleate complex coated sodium sulfate under N2 atmosphere. Through a direct in situ catalytic reaction, graphene layer has been uniformly grown on the MoS2 film formed by the reaction of M...

A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures

Directory of Open Access Journals (Sweden)

Liwen Sang

2013-08-01

Full Text Available Ultraviolet (UV photodetectors have drawn extensive attention owing to their applications in industrial, environmental and even biological fields. Compared to UV-enhanced Si photodetectors, a new generation of wide bandgap semiconductors, such as (Al, In GaN, diamond, and SiC, have the advantages of high responsivity, high thermal stability, robust radiation hardness and high response speed. On the other hand, one-dimensional (1D nanostructure semiconductors with a wide bandgap, such as β-Ga2O3, GaN, ZnO, or other metal-oxide nanostructures, also show their potential for high-efficiency UV photodetection. In some cases such as flame detection, high-temperature thermally stable detectors with high performance are required. This article provides a comprehensive review on the state-of-the-art research activities in the UV photodetection field, including not only semiconductor thin films, but also 1D nanostructured materials, which are attracting more and more attention in the detection field. A special focus is given on the thermal stability of the developed devices, which is one of the key characteristics for the real applications.

Transfer matrix approach to electron transport in monolayer MoS2/MoO x heterostructures

Science.gov (United States)

Li, Gen

2018-05-01

Oxygen plasma treatment can introduce oxidation into monolayer MoS2 to transfer MoS2 into MoO x , causing the formation of MoS2/MoO x heterostructures. We find the MoS2/MoO x heterostructures have the similar geometry compared with GaAs/Ga1‑x Al x As semiconductor superlattice. Thus, We employ the established transfer matrix method to analyse the electron transport in the MoS2/MoO x heterostructures with double-well and step-well geometries. We also considere the coupling between transverse and longitudinal kinetic energy because the electron effective mass changes spatially in the MoS2/MoO x heterostructures. We find the resonant peaks show red shift with the increasing of transverse momentum, which is similar to the previous work studying the transverse-momentum-dependent transmission in GaAs/Ga1‑x Al x As double-barrier structure. We find electric field can enhance the magnitude of peaks and intensify the coupling between longitudinal and transverse momentums. Moreover, higher bias is applied to optimize resonant tunnelling condition to show negative differential effect can be observed in the MoS2/MoO x system.

X-ray diffraction study of epitaxial heterostructures of II-VI CdTe and ZnTe semiconductors; Etude par diffraction de rayons X d`heterostructures epitaxiees a base des semi-conducteurs II-VI CdTe et ZnTe

Energy Technology Data Exchange (ETDEWEB)

Bouchet-Boudet, N.

1996-10-07

This work deals with the structural study of II-VI semiconductor (CdTe and ZnTe) heterostructures by X-ray diffraction and reflectivity. These heterostructures have a high lattice parameter misfit and are grown by Molecular Beam Epitaxy. Two main subjects are developed: the characterization of ZnTe wires, grown by step propagation on a CdTe (001) vicinal surface, and the study of the vertical correlations in Cd{sub 0.8}Zn{sub 0.2}Te / CdTe superlattices and superlattices made of ZnTe fractional layers spaced by CdTe. The growth of organised system is up to date; its aim is to realize quantum boxes (or wires) superlattices which are laterally and vertically ordered. The deformation along the growth axis induced by a ZnTe fractional layer inserted in a CdTe matrix is modelled, in the kinematical approximation, to reproduce the reflectivity measured around the substrate (004) Bragg peak. The lateral periodicity of the wires, deposited on a vicinal surface is a new and difficult subject. Some results are obtained on a vertical superlattice grown on a 1 deg. mis-cut surface. The in-plane and out-of-plane correlation lengths of a Cd{sub 0.8}Zn{sub 0.2}Te / CdTe superlattice are deduced from the diffused scattered intensity measured at grazing incidence. The calculations are made within the `distorted Wave Born Approximation`. The vertical correlation in ZnTe boxes (or wines) superlattices can be measured around Bragg peaks. It is twice bigger in a superlattice grown on a 2 deg. mis-cut substrate than a nominal one. (author). 74 refs.

Influence of Au Nanoparticle Shape on Au@Cu2O Heterostructures

Directory of Open Access Journals (Sweden)

Jie Zhu

2015-01-01

Full Text Available Synthesis of metal-semiconductor heterostructures may allow the combination of function of the corresponding components and/or the enhanced performance resulting from the interactions between all the components. In this paper, Au@Cu2O core-shell heterostructures are prepared by a seed-growth method, using different-shaped Au nanocrystals as the seeds such as nanorods, octahedra, decahedra, dots, and nanocubes. The results revealed that the final structure of Au@Cu2O was greatly influenced by the shape of the seeds used. Exposure of Cu2O{111} and Cu2O{001} favored when the overgrowth happened on Au{111} and Au{001} surface, respectively. The size of the product can also be tuned by the amount of the seeds. The results reported here provide a thinking clue to modulate the shape and size of core-shell nanocrystals, which is useful in developing new materials with desired performance.

Analytical models of optical response in one-dimensional semiconductors

International Nuclear Information System (INIS)

Pedersen, Thomas Garm

2015-01-01

The quantum mechanical description of the optical properties of crystalline materials typically requires extensive numerical computation. Including excitonic and non-perturbative field effects adds to the complexity. In one dimension, however, the analysis simplifies and optical spectra can be computed exactly. In this paper, we apply the Wannier exciton formalism to derive analytical expressions for the optical response in four cases of increasing complexity. Thus, we start from free carriers and, in turn, switch on electrostatic fields and electron–hole attraction and, finally, analyze the combined influence of these effects. In addition, the optical response of impurity-localized excitons is discussed. - Highlights: • Optical response of one-dimensional semiconductors including excitons. • Analytical model of excitonic Franz–Keldysh effect. • Computation of optical response of impurity-localized excitons

16th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics

Science.gov (United States)

Suris, Robert A.; Vorobjev, Leonid E.; Firsov, Dmitry A.

2015-01-01

The 16th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics was held on November 24 - 28 at St. Petersburg Polytechnic University. The program of the Conference included semiconductor technology, heterostructures with quantum wells and quantum dots, opto- and nanoelectronic devices, and new materials. A large number of participants with about 200 attendees from many regions of Russia provided a perfect platform for the valuable discussions between students and experienced scientists. The Conference included two invited talks given by a corresponding member of RAS P.S. Kopyev ("Nitrides: the 4th Nobel Prize on semiconductor heterostructures") and Dr. A.V. Ivanchik ("XXI century is the era of precision cosmology"). Students, graduate and postgraduate students presented their results on plenary and poster sessions. The total number of accepted papers published in Russian (the official conference language) was 92. Here we publish 18 of them in English. Like previous years, the participants were involved in the competition for the best report. Certificates and cash prizes were awarded to a number of participants for the presentations selected by the Program Committee. Two special E.F. Gross Prizes were given for the best presentations in semiconductor optics. Works with potential applications were recommended for participation in the following competition for support from the Russian Foundation for Assistance to Small Innovative Enterprises in Science and Technology. The Conference was supported by the Russian Foundation for Basic Research, the "Dynasty" foundation and the innovation company "ATC - Semiconductor Devices", St. Petersburg. The official Conference website is http://www.semicond.spbstu.ru/conf2014-eng.html

Ballistic electron emissions microscopy (BEEM) of ferromagnet-semiconductor interfaces; Ballistische Elektronen Emissions Mikroskopie (BEEM) an Ferromagnet-Halbleitergrenzflaechen

Energy Technology Data Exchange (ETDEWEB)

Obernhuber, S.

2007-04-15

For current research on spin-transistors it is important to know the characteristics of ferromagnet semiconductor interfaces. The ballistic electron emission microscopy (BEEM) is a method to investigate such a buried interface with nanometer resolution. In this work several ferromagnet/GaAs(110) interfaces have been analysed concerning their homogeneity and mean local Schottky-barrier heights (SBH) have been determined. In Addition, the resulting integral SBH was calculated from the distribution of the local SBHs and compared with the SBH determined from voltage/current characteristics. The areas with a low SBH dominate the current conduction across the interface. Additional BEEM measurements on (AlGaAs/GaAs) heterostructures have been performed. This heterostructures consist of 50 nm AlGaAs/GaAs layers. The results of the BEEM measurements indicate, that the GaAs QWs are defined by AlGaAs barriers. The transition from AlGaAs to GaAs is done within 10 nm. (orig.)

Transition metal atoms absorbed on MoS2/h-BN heterostructure: stable geometries, band structures and magnetic properties.

Science.gov (United States)

Wu, Yanbing; Huang, Zongyu; Liu, Huating; He, Chaoyu; Xue, Lin; Qi, Xiang; Zhong, Jianxin

2018-06-15

We have studied the stable geometries, band structures and magnetic properties of transition-metal (V, Cr, Mn, Fe, Co and Ni) atoms absorbed on MoS2/h-BN heterostructure systems by first-principles calculations. By comparing the adsorption energies, we find that the adsorbed transition metal (TM) atoms prefer to stay on the top of Mo atoms. The results of the band structure without spin-orbit coupling (SOC) interaction indicate that the Cr-absorbed systems behave in a similar manner to metals, and the Co-absorbed system exhibits a half-metallic state. We also deduce that the V-, Mn-, Fe-absorbed systems are semiconductors with 100% spin polarization at the HOMO level. The Ni-absorbed system is a nonmagnetic semiconductor. In contrast, the Co-absorbed system exhibits metallic state, and the bandgap of V-absorbed system decreases slightly according to the SOC calculations. In addition, the magnetic moments of all the six TM atoms absorbed on the MoS2/h-BN heterostructure systems decrease when compared with those of their free-standing states.

Quantum theory of the optical and electronic properties of semiconductors

CERN Document Server

Haug, Hartmut

2009-01-01

This invaluable textbook presents the basic elements needed to understand and research into semiconductor physics. It deals with elementary excitations in bulk and low-dimensional semiconductors, including quantum wells, quantum wires and quantum dots. The basic principles underlying optical nonlinearities are developed, including excitonic and many-body plasma effects. Fundamentals of optical bistability, semiconductor lasers, femtosecond excitation, the optical Stark effect, the semiconductor photon echo, magneto-optic effects, as well as bulk and quantum-confined Franz-Keldysh effects, are covered. The material is presented in sufficient detail for graduate students and researchers with a general background in quantum mechanics.This fifth edition includes an additional chapter on 'Quantum Optical Effects' where the theory of quantum optical effects in semiconductors is detailed. Besides deriving the 'semiconductor luminescence equations' and the expression for the stationary luminescence spectrum, the resu...

Isotopically controlled semiconductors

Energy Technology Data Exchange (ETDEWEB)

Haller, Eugene E.

2006-06-19

The following article is an edited transcript based on the Turnbull Lecture given by Eugene E. Haller at the 2005 Materials Research Society Fall Meeting in Boston on November 29, 2005. The David Turnbull Lectureship is awarded to recognize the career of a scientist who has made outstanding contributions to understanding materials phenomena and properties through research, writing, and lecturing, as exemplified by the life work of David Turnbull. Haller was named the 2005 David Turnbull Lecturer for his 'pioneering achievements and leadership in establishing the field of isotopically engineered semiconductors; for outstanding contributions to materials growth, doping and diffusion; and for excellence in lecturing, writing, and fostering international collaborations'. The scientific interest, increased availability, and technological promise of highly enriched isotopes have led to a sharp rise in the number of experimental and theoretical studies with isotopically controlled semiconductor crystals. This article reviews results obtained with isotopically controlled semiconductor bulk and thin-film heterostructures. Isotopic composition affects several properties such as phonon energies, band structure, and lattice constant in subtle, but, for their physical understanding, significant ways. Large isotope-related effects are observed for thermal conductivity in local vibrational modes of impurities and after neutron transmutation doping. Spectacularly sharp photoluminescence lines have been observed in ultrapure, isotopically enriched silicon crystals. Isotope multilayer structures are especially well suited for simultaneous self- and dopant-diffusion studies. The absence of any chemical, mechanical, or electrical driving forces makes possible the study of an ideal random-walk problem. Isotopically controlled semiconductors may find applications in quantum computing, nanoscience, and spintronics.

Local anodic oxidation by AFM tip developed for novel semiconductor nanodevices

International Nuclear Information System (INIS)

Cambel, Vladimir; Martaus, Jozef; Soltys, Jan; Kudela, Robert; Gregusova, Dagmar

2008-01-01

The local anodic oxidation (LAO) by the tip of atomic force microscope (AFM) is used for fabrication of nanometer-scaled structures and devices. We study the technology of LAO applied to semiconductor heterostructures, theoretically and experimentally as well. The goal is to improve the LAO process itself, i.e., to create narrow LAO lines that form high-energy barriers in the plane with the 2D electron gas. In the first part we show the electric field distribution in the system tip-sample during LAO. For samples with low-conductive cap layer the maximum electric field is shifted apart the tip apex, which leads to wide oxide lines. Our Monte Carlo (MC) calculations show how the height of the energy barrier in the system depends on the geometry of the created lines (trenches), and on voltage applied to the structure. Based on the calculations, we have proposed a novel LAO technology and applied it to InGaP/AlGaAs/GaAs heterostructure with doping layer only 6 nm beneath the surface. The doping layer can be oxidized easily by the AFM tip in this case, and the oxide objects can be removed by several etchants. This approach to the LAO technology leads to narrow LAO trenches (∼60 nm) and to energy barriers high enough for room- and low-temperature applications

Electrostatics of electron-hole interactions in van der Waals heterostructures

Science.gov (United States)

Cavalcante, L. S. R.; Chaves, A.; Van Duppen, B.; Peeters, F. M.; Reichman, D. R.

2018-03-01

The role of dielectric screening of electron-hole interaction in van der Waals heterostructures is theoretically investigated. A comparison between models available in the literature for describing these interactions is made and the limitations of these approaches are discussed. A simple numerical solution of Poisson's equation for a stack of dielectric slabs based on a transfer matrix method is developed, enabling the calculation of the electron-hole interaction potential at very low computational cost and with reasonable accuracy. Using different potential models, direct and indirect exciton binding energies in these systems are calculated within Wannier-Mott theory, and a comparison of theoretical results with recent experiments on excitons in two-dimensional materials is discussed.

Precise, Self-Limited Epitaxy of Ultrathin Organic Semiconductors and Heterojunctions Tailored by van der Waals Interactions.

Science.gov (United States)

Wu, Bing; Zhao, Yinghe; Nan, Haiyan; Yang, Ziyi; Zhang, Yuhan; Zhao, Huijuan; He, Daowei; Jiang, Zonglin; Liu, Xiaolong; Li, Yun; Shi, Yi; Ni, Zhenhua; Wang, Jinlan; Xu, Jian-Bin; Wang, Xinran

2016-06-08

Precise assembly of semiconductor heterojunctions is the key to realize many optoelectronic devices. By exploiting the strong and tunable van der Waals (vdW) forces between graphene and organic small molecules, we demonstrate layer-by-layer epitaxy of ultrathin organic semiconductors and heterostructures with unprecedented precision with well-defined number of layers and self-limited characteristics. We further demonstrate organic p-n heterojunctions with molecularly flat interface, which exhibit excellent rectifying behavior and photovoltaic responses. The self-limited organic molecular beam epitaxy (SLOMBE) is generically applicable for many layered small-molecule semiconductors and may lead to advanced organic optoelectronic devices beyond bulk heterojunctions.

Tunable SnSe2 /WSe2 Heterostructure Tunneling Field Effect Transistor.

Science.gov (United States)

Yan, Xiao; Liu, Chunsen; Li, Chao; Bao, Wenzhong; Ding, Shijin; Zhang, David Wei; Zhou, Peng

2017-09-01

The burgeoning 2D semiconductors can maintain excellent device electrostatics with an ultranarrow channel length and can realize tunneling by electrostatic gating to avoid deprivation of band-edge sharpness resulting from chemical doping, which make them perfect candidates for tunneling field effect transistors. Here this study presents SnSe 2 /WSe 2 van der Waals heterostructures with SnSe 2 as the p-layer and WSe 2 as the n-layer. The energy band alignment changes from a staggered gap band offset (type-II) to a broken gap (type-III) when changing the negative back-gate voltage to positive, resulting in the device operating as a rectifier diode (rectification ratio ~10 4 ) or an n-type tunneling field effect transistor, respectively. A steep average subthreshold swing of 80 mV dec -1 for exceeding two decades of drain current with a minimum of 37 mV dec -1 at room temperature is observed, and an evident trend toward negative differential resistance is also accomplished for the tunneling field effect transistor due to the high gate efficiency of 0.36 for single gate devices. The I ON /I OFF ratio of the transfer characteristics is >10 6 , accompanying a high ON current >10 -5 A. This work presents original phenomena of multilayer 2D van der Waals heterostructures which can be applied to low-power consumption devices. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Gallium nitride heterostructures on 3D structured silicon.

Science.gov (United States)

Fündling, Sönke; Sökmen, Unsal; Peiner, Erwin; Weimann, Thomas; Hinze, Peter; Jahn, Uwe; Trampert, Achim; Riechert, Henning; Bakin, Andrey; Wehmann, Hergo-Heinrich; Waag, Andreas

2008-10-08

We investigated GaN-based heterostructures grown on three-dimensionally patterned Si(111) substrates by metal organic vapour phase epitaxy, with the goal of fabricating well controlled high quality, defect reduced GaN-based nanoLEDs. The high aspect ratios of such pillars minimize the influence of the lattice mismatched substrate and improve the material quality. In contrast to other approaches, we employed deep etched silicon substrates to achieve a controlled pillar growth. For that a special low temperature inductively coupled plasma etching process has been developed. InGaN/GaN multi-quantum-well structures have been incorporated into the pillars. We found a pronounced dependence of the morphology of the GaN structures on the size and pitch of the pillars. Spatially resolved optical properties of the structures are analysed by cathodoluminescence.

Gallium nitride heterostructures on 3D structured silicon

Energy Technology Data Exchange (ETDEWEB)

Fuendling, Soenke; Soekmen, Uensal; Peiner, Erwin; Bakin, Andrey; Wehmann, Hergo-Heinrich; Waag, Andreas [Institut fuer Halbleitertechnik, Hans-Sommer-Strasse 66, 38106 Braunschweig (Germany); Weimann, Thomas; Hinze, Peter [Physikalisch Technische Bundesanstalt, Bundesallee 100, 38116 Braunschweig (Germany); Jahn, Uwe; Trampert, Achim; Riechert, Henning [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)], E-mail: s.fuendling@tu-bs.de

2008-10-08

We investigated GaN-based heterostructures grown on three-dimensionally patterned Si(111) substrates by metal organic vapour phase epitaxy, with the goal of fabricating well controlled high quality, defect reduced GaN-based nanoLEDs. The high aspect ratios of such pillars minimize the influence of the lattice mismatched substrate and improve the material quality. In contrast to other approaches, we employed deep etched silicon substrates to achieve a controlled pillar growth. For that a special low temperature inductively coupled plasma etching process has been developed. InGaN/GaN multi-quantum-well structures have been incorporated into the pillars. We found a pronounced dependence of the morphology of the GaN structures on the size and pitch of the pillars. Spatially resolved optical properties of the structures are analysed by cathodoluminescence.

Axial Ge/Si nanowire heterostructure tunnel FETs.

Energy Technology Data Exchange (ETDEWEB)

Dayeh, Shadi A. (Los Alamos National Laboratory); Gin, Aaron V.; Huang, Jian Yu; Picraux, Samuel Thomas (Los Alamos National Laboratory)

2010-03-01

}20{sup o} off the <111> axis at about 300 nm away from the Ge/Si interface. This provides a natural marker for placing the gate contact electrodes and gate metal at appropriate location for desired high-on current and reduced ambipolarity as shown in Fig. 2. The 1D heterostructures allow band-edge engineering in the transport direction, not easily accessible in planar devices, providing an additional degree of freedom for designing tunnel FETs (TFETs). For instance, a Ge tunnel source can be used for efficient electron/hole tunneling and a Si drain can be used for reduced back-tunneling and ambipolar behavior. Interface abruptness on the other hand (particularly for doping) imposes challenges in these structures and others for realizing high performance TFETs in p-i-n junctions. Since the metal-semiconductor contacts provide a sharp interface with band-edge control, we use properly designed Schottky contacts (aided by 3D Silvaco simulations) as the tunnel barriers both at the source and drain and utilize the asymmetry in the Ge/Si channel bandgap to reduce ambipolar transport behavior generally observed in TFETs. Fig. 3 shows the room-temperature transfer curves of a Ge/Si heterostructure TFET (H-TFET) for different V{sub DS} values showing a maximum on-current of {approx}7 {micro}A, {approx}170 mV/decade inverse subthreshold slope and 5 orders of magnitude I{sub on}/I{sub off} ratios for all V{sub DS} biases considered here. This high on-current value is {approx}1750 X higher than that obtained with Si p-i-n{sup +} NW TFETs and {approx}35 X higher than that obtained with CNT TFET. The I{sub on}/I{sub off} ratio and inverse subthreshold slope compare favorably to that of Si {approx} 10{sup 3} I{sub on}/I{sub off} and {approx} 800 mV/decade SS{sup -1} but lags behind those of CNT TFET due to poor PECVD nitride gate oxide quality ({var_epsilon}{sub r} {approx} 3-4). The asymmetry in the Schottky barrier heights used here eliminates the stringent requirements of abrupt

CCST [Center for Compound Semiconductor Technology] research briefs

International Nuclear Information System (INIS)

Zipperian, T.E.; Voelker, E.R.

1989-12-01

This paper discusses the following topics: theoretical predictions of valence and conduction band offsets in III-V semiconductors; reflectance modulation of a semiconductor superlattice optical mirror; magnetoquantum oscillations of the phonon-drag thermoelectric power in quantum wells; correlation between photoluminescence line shape and device performance of p-channel strained-layer materials; control of threading dislocations in heteroepitaxial structures; improved growth of CdTe on GaAs by patterning; role of structure threading dislocations in relaxation of highly strained single-quantum-well structures; InAlAs growth optimization using reflection mass spectrometry; nonvolatile charge storage in III-V heterostructures; optically triggered thyristor switches; InAsSb strained-layer superlattice infrared detectors with high detectivities; resonant periodic gain surface-emitting semiconductor lasers; performance advantages of strained-quantum-well lasers in AlGaAs/InGaAs; optical integrated circuit for phased-array radar antenna control; and deposition and novel device fabrication from Tl 2 Ca 2 Ba 2 Cu 3 O y thin films

Channeling techniques to study strains and defects in heterostructures and multi quantum wells

Science.gov (United States)

Pathak, A. P.; Dhamodaran, S.; Sathish, N.

2005-08-01

The importance and advantages of heterostructures and Quantum Wells (QWs) in device technology has made research challenging due to lack of direct techniques for their characterization. Particularly the characterization of strain and defects at the interfaces has become important due to their dominance in the electrical and optical properties of materials and devices. RBSiC has been used to study variety of defects in single crystalline materials, for nearly four decades now. Channeling based experiments play a crucial role in giving depth information of strain and defects. Ion beams are used for both material characterizations as well as for modifications. Hence it is also possible to monitor the modifications online, which are discussed in detail. In the present work, Swift Heavy Ion (SHI) modification of III-V semiconductor heterostnictures and MQWs and the results of subsequent strain measurements by RBSiC in initially strained as well as lattice matched systems are discussed. We find that the compressive strain decreases due to SHI irradiation and a tensile strain is induced in an initially lattice matched system. The incident ion fluence dependence of strain modifications in the heterostructures will also be discussed. The use of high energy channeling for better sensitivity of strain measurements in low mismatch materials will be discussed in detail. Wherever possible, a comparison of results with those obtained by other techniques like HRXRD is given.

Carrier concentration induced ferromagnetism in semiconductors

International Nuclear Information System (INIS)

Story, T.

2007-01-01

In semiconductor spintronics the key materials issue concerns ferromagnetic semiconductors that would, in particular, permit an integration (in a single multilayer heterostructure) of standard electronic functions of semiconductors with magnetic memory function. Although classical semiconductor materials, such as Si or GaAs, are nonmagnetic, upon substitutional incorporation of magnetic ions (typically of a few atomic percents of Mn 2+ ions) and very heavy doping with conducting carriers (at the level of 10 20 - 10 21 cm -3 ) a ferromagnetic transition can be induced in such diluted magnetic semiconductors (also known as semimagnetic semiconductors). In the lecture the spectacular experimental observations of carrier concentration induced ferromagnetism will be discussed for three model semiconductor crystals. p - Ga 1-x Mn x As currently the most actively studied and most perspective ferromagnetic semiconductor of III-V group, in which ferromagnetism appears due to Mn ions providing both local magnetic moments and acting as acceptor centers. p - Sn 1-x Mn x Te and p - Ge 1-x Mn x Te classical diluted magnetic semiconductors of IV-VI group, in which paramagnet-ferromagnet and ferromagnet-spin glass transitions are found for very high hole concentration. n - Eu 1-x Gd x Te mixed magnetic crystals, in which the substitution of Gd 3+ ions for Eu 2+ ions creates very high electron concentration and transforms antiferromagnetic EuTe (insulating compound) into ferromagnetic n-type semiconductor alloy. For each of these materials systems the key physical features will be discussed concerning: local magnetic moments formation, magnetic phase diagram as a function of magnetic ions and carrier concentration as well as Curie temperature and magnetic anisotropy engineering. Various theoretical models proposed to explain the effect of carrier concentration induced ferromagnetism in semiconductors will be briefly discussed involving mean field approaches based on Zener and RKKY

A Review of Ultrahigh Efficiency III-V Semiconductor Compound Solar Cells: Multijunction Tandem, Lower Dimensional, Photonic Up/Down Conversion and Plasmonic Nanometallic Structures

Directory of Open Access Journals (Sweden)

Katsuaki Tanabe

2009-07-01

Full Text Available Solar cells are a promising renewable, carbon-free electric energy resource to address the fossil fuel shortage and global warming. Energy conversion efficiencies around 40% have been recently achieved in laboratories using III-V semiconductor compounds as photovoltaic materials. This article reviews the efforts and accomplishments made for higher efficiency III-V semiconductor compound solar cells, specifically with multijunction tandem, lower-dimensional, photonic up/down conversion, and plasmonic metallic structures. Technological strategies for further performance improvement from the most efficient (AlInGaP/(InGaAs/Ge triple-junction cells including the search for 1.0 eV bandgap semiconductors are discussed. Lower-dimensional systems such as quantum well and dot structures are being intensively studied to realize multiple exciton generation and multiple photon absorption to break the conventional efficiency limit. Implementation of plasmonic metallic nanostructures manipulating photonic energy flow directions to enhance sunlight absorption in thin photovoltaic semiconductor materials is also emerging.

Main principles of developing exploitation models of semiconductor devices

Science.gov (United States)

Gradoboev, A. V.; Simonova, A. V.

2018-05-01

The paper represents primary tasks, solutions of which allow to develop the exploitation modes of semiconductor devices taking into account complex and combined influence of ionizing irradiation and operation factors. The structure of the exploitation model of the semiconductor device is presented, which is based on radiation and reliability models. Furthermore, it was shown that the exploitation model should take into account complex and combine influence of various ionizing irradiation types and operation factors. The algorithm of developing the exploitation model of the semiconductor devices is proposed. The possibility of creating the radiation model of Schottky barrier diode, Schottky field-effect transistor and Gunn diode is shown based on the available experimental data. The basic exploitation model of IR-LEDs based upon double AlGaAs heterostructures is represented. The practical application of the exploitation models will allow to output the electronic products with guaranteed operational properties.

Ferroelectric Polarization-Modulated Interfacial Fine Structures Involving Two-Dimensional Electron Gases in Pb(Zr,Ti)O3/LaAlO3/SrTiO3 Heterostructures.

Science.gov (United States)

Wang, Shuangbao; Bai, Yuhang; Xie, Lin; Li, Chen; Key, Julian D; Wu, Di; Wang, Peng; Pan, Xiaoqing

2018-01-10

Interfacial fine structures of bare LaAlO 3 /SrTiO 3 (LAO/STO) heterostructures are compared with those of LAO/STO heterostructures capped with upward-polarized Pb(Zr 0.1 ,Ti 0.9 )O 3 (PZT up ) or downward-polarized Pb(Zr 0.5 ,Ti 0.5 )O 3 (PZT down ) overlayers by aberration-corrected scanning transmission electron microscopy experiments. By combining the acquired electron energy-loss spectroscopy mapping, we are able to directly observe electron transfer from Ti 4+ to Ti 3+ and ionic displacements at the interface of bare LAO/STO and PZT down /LAO/STO heterostructure unit cell by unit cell. No evidence of Ti 3+ is observed at the interface of the PZT up /LAO/STO samples. Furthermore, the confinement of the two-dimensional electron gas (2DEG) at the interface is determined by atomic-column spatial resolution. Compared with the bare LAO/STO interface, the 2DEG density at the LAO/STO interface is enhanced or depressed by the PZT down or PZT up overlayer, respectively. Our microscopy studies shed light on the mechanism of ferroelectric modulation of interfacial transport at polar/nonpolar oxide heterointerfaces, which may facilitate applications of these materials as nonvolatile memory.

Production Methods of Van der Waals Heterostructures Based on Transition Metal Dichalcogenides

Directory of Open Access Journals (Sweden)

Haimei Qi

2018-01-01

Full Text Available Two dimensional (2D materials have gained significant attention since the discovery of graphene in 2004. Layered transition metal dichalcogenides (TMDs have become the focus of 2D materials in recent years due to their wide range of chemical compositions and a variety of properties. These TMDs layers can be artificially integrated with other layered materials into a monolayer (lateral or a multilayer stack (vertical heterostructures. The resulting heterostructures provide new properties and applications beyond their component 2D atomic crystals and many exciting experimental results have been reported during the past few years. In this review, we present the various synthesis methods (mechanical exfoliation, physical vapor transport, chemical vapor deposition, and molecular beam epitaxy method on van der Waals heterostructures based on different TMDs as well as an outlook for future research.

Controlled growth of high-density CdS and CdSe nanorod arrays on selective facets of two-dimensional semiconductor nanoplates

KAUST Repository

Wu, Xue-Jun

2016-03-14

The rational synthesis of hierarchical three-dimensional nanostructures with specific compositions, morphologies and functionalities is important for applications in a variety of fields ranging from energy conversion and electronics to biotechnology. Here, we report a seeded growth approach for the controlled epitaxial growth of three types of hierarchical one-dimensional (1D)/two-dimensional (2D) nanostructures, where nanorod arrays of II-VI semiconductor CdS or CdSe are grown on the selective facets of hexagonal-shaped nanoplates, either on the two basal facets of the nanoplate, or on one basal facet, or on the two basal facets and six side facets. The seed engineering of 2D hexagonal-shaped nanoplates is the key factor for growth of the three resulting types of 1D/2D nanostructures. The wurtzite- and zinc-blende-type polymorphs of semiconductors are used to determine the facet-selective epitaxial growth of 1D nanorod arrays, resulting in the formation of different hierarchical three-dimensional (3D) nanostructures. © 2016 Macmillan Publishers Limited. All rights reserved.

Tunnelling and relaxation in semiconductor double quantum wells

International Nuclear Information System (INIS)

Ferreira, R.; Bastard, G.

1997-01-01

Double quantum wells are among the simplest semiconductor heterostructures exhibiting tunnel coupling. The existence of a quantum confinement effect for the energy levels of a narrow single quantum well has been largely studied. In double quantum wells, in addition to these confinement effects which characterize the levels of the isolated wells, one faces the problem of describing the eigenstates of systems interacting weakly through a potential barrier. In addition, the actual structures differ from the ideal systems studied in the quantum mechanics textbooks in many aspects. The presence of defects leads, for instance, to an irreversible time evolution for a population of photocreated carriers. This irreversible transfer is now clearly established experimentally. The resonant behaviour of the transfer has also been evidenced, from the study of biased structures. If the existence of an interwell transfer is now clearly established from the experimental point of view, its theoretical description, however, is not fully satisfactory. This review focuses on the theoretical description of the energy levels and of the interwell assisted transfer in double quantum wells. We shall firstly outline the problem of tunnel coupling in semiconductor heterostructures and then discuss the single particle and exciton eigenstates in double quantum wells. In the remaining part of the review we shall present and critically review a few theoretical models used to describe the assisted interwell transfer in these structures. (author)

Circular dichroism in a three-dimensional semiconductor chiral photonic crystal

Energy Technology Data Exchange (ETDEWEB)

Takahashi, S.; Ota, Y.; Tatebayashi, J. [Institute of Nano Quantum Information Electronics, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Tajiri, T. [Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Iwamoto, S.; Arakawa, Y. [Institute of Nano Quantum Information Electronics, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 (Japan)

2014-08-04

Circular dichroism covering the telecommunication band is experimentally demonstrated in a semiconductor-based three-dimensional chiral photonic crystal (PhC). We design a rotationally stacked woodpile PhC structure where neighboring layers are rotated by 60° and three layers construct a single helical unit. The mirror-asymmetric PhC made from GaAs with sub-micron periodicity is fabricated by a micro-manipulation technique. Due to the large contrast of refractive indices between GaAs and air, the experimentally obtained circular dichroism extends over a wide wavelength range, with the transmittance of right-handed circularly polarized incident light being 85% and that of left-handed light being 15% at a wavelength of 1.3 μm. The obtained results show good agreement with numerical simulations.

Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures

KAUST Repository

Lin, Yu-Chuan; Ghosh, Ram Krishna; Addou, Rafik; Lu, Ning; Eichfeld, Sarah M.; Zhu, Hui; Li, Ming-Yang; Peng, Xin; Kim, Moon J.; Li, Lain-Jong; Wallace, Robert M.; Datta, Suman; Robinson, Joshua A.

2015-01-01

Vertical integration of two-dimensional van der Waals materials is predicted to lead to novel electronic and optical properties not found in the constituent layers. Here, we present the direct synthesis of two unique, atomically thin, multi-junction heterostructures by combining graphene with the monolayer transition-metal dichalcogenides: molybdenum disulfide (MoS2), molybdenum diselenide (MoSe2) and tungsten diselenide (WSe2). The realization of MoS2–WSe2–graphene and WSe2–MoS2–graphene heterostructures leads to resonant tunnelling in an atomically thin stack with spectrally narrow, room temperature negative differential resistance characteristics.

Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures

KAUST Repository

Lin, Yu-Chuan

2015-06-19

Vertical integration of two-dimensional van der Waals materials is predicted to lead to novel electronic and optical properties not found in the constituent layers. Here, we present the direct synthesis of two unique, atomically thin, multi-junction heterostructures by combining graphene with the monolayer transition-metal dichalcogenides: molybdenum disulfide (MoS2), molybdenum diselenide (MoSe2) and tungsten diselenide (WSe2). The realization of MoS2–WSe2–graphene and WSe2–MoS2–graphene heterostructures leads to resonant tunnelling in an atomically thin stack with spectrally narrow, room temperature negative differential resistance characteristics.

Laterally Stitched Heterostructures of Transition Metal Dichalcogenide: Chemical Vapor Deposition Growth on Lithographically Patterned Area

KAUST Repository

Li, Henan

2016-10-31

Two-dimensional transition metal dichalcogenides (TMDCs) have shown great promise in electronics and optoelectronics due to their unique electrical and optical properties. Heterostructured TMDC layers such as the laterally stitched TMDCs offer the advantages of better electronic contact and easier band offset tuning. Here, we demonstrate a photoresist-free focused ion beam (FIB) method to pattern as-grown TMDC monolayers by chemical vapor deposition, where the exposed edges from FIB etching serve as the seeds for growing a second TMDC material to form desired lateral heterostructures with arbitrary layouts. The proposed lithographic and growth processes offer better controllability for fabrication of the TMDC heterostrucuture, which enables the construction of devices based on heterostructural monolayers. © 2016 American Chemical Society.

Synchrotron radiation studies of inorganic-organic semiconductor interfaces

International Nuclear Information System (INIS)

Evans, D.A.; Steiner, H.J.; Vearey-Roberts, A.R.; Bushell, A.; Cabailh, G.; O'Brien, S.; Wells, J.W.; McGovern, I.T.; Dhanak, V.R.; Kampen, T.U.; Zahn, D.R.T.; Batchelor, D.

2003-01-01

Organic semiconductors (polymers and small molecules) are widely used in electronic and optoelectronic technologies. Many devices are based on multilayer structures where interfaces play a central role in device performance and where inorganic semiconductor models are inadequate. Synchrotron radiation techniques such as photoelectron spectroscopy (PES), near-edge X-ray absorption fine structure (NEXAFS) and X-ray standing wave spectroscopy (XSW) provide a powerful means of probing the structural, electronic and chemical properties of these interfaces. The surface-specificity of these techniques allows key properties to be monitored as the heterostructure is fabricated. This methodology has been directed at the growth of hybrid organic-inorganic semiconductor interfaces involving copper phthalocyanine as the model organic material and InSb and GaAs as the model inorganic semiconductor substrates. Core level PES has revealed that these interfaces are abrupt and chemically inert due to the weak bonding between the molecules and the inorganic semiconductor. NEXAFS studies have shown that there is a preferred orientation of the molecules within the organic semiconductor layers. The valence band offsets for the heterojunctions have been directly measured using valence level PES and were found to be very different for copper phthalocyanine on InSb and GaAs (0.7 and -0.3 eV respectively) although an interface dipole is present in both cases

A classical-quantum coupling strategy for a hierarchy of one dimensional models for semiconductors

OpenAIRE

Jourdana, Clément; Pietra, Paola; Vauchelet, Nicolas

2014-01-01

We consider one dimensional coupled classical-quantum models for quantum semiconductor device simulations. The coupling occurs in the space variable : the domain of the device is divided into a region with strong quantum effects (quantum zone) and a region where quantum effects are negligible (classical zone). In the classical zone, transport in diffusive approximation is modeled through diffusive limits of the Boltzmann transport equation. This leads to a hierarchy of classical model. The qu...

Rapid Three-Dimensional Printing in Water Using Semiconductor-Metal Hybrid Nanoparticles as Photoinitiators.

Science.gov (United States)

Pawar, Amol Ashok; Halivni, Shira; Waiskopf, Nir; Ben-Shahar, Yuval; Soreni-Harari, Michal; Bergbreiter, Sarah; Banin, Uri; Magdassi, Shlomo

2017-07-12

Additive manufacturing processes enable fabrication of complex and functional three-dimensional (3D) objects ranging from engine parts to artificial organs. Photopolymerization, which is the most versatile technology enabling such processes through 3D printing, utilizes photoinitiators that break into radicals upon light absorption. We report on a new family of photoinitiators for 3D printing based on hybrid semiconductor-metal nanoparticles. Unlike conventional photoinitiators that are consumed upon irradiation, these particles form radicals through a photocatalytic process. Light absorption by the semiconductor nanorod is followed by charge separation and electron transfer to the metal tip, enabling redox reactions to form radicals in aerobic conditions. In particular, we demonstrate their use in 3D printing in water, where they simultaneously form hydroxyl radicals for the polymerization and consume dissolved oxygen that is a known inhibitor. We also demonstrate their potential for two-photon polymerization due to their giant two-photon absorption cross section.

Scaling Universality between Band Gap and Exciton Binding Energy of Two-Dimensional Semiconductors

Science.gov (United States)

Jiang, Zeyu; Liu, Zhirong; Li, Yuanchang; Duan, Wenhui

2017-06-01

Using first-principles G W Bethe-Salpeter equation calculations and the k .p theory, we unambiguously show that for two-dimensional (2D) semiconductors, there exists a robust linear scaling law between the quasiparticle band gap (Eg) and the exciton binding energy (Eb), namely, Eb≈Eg/4 , regardless of their lattice configuration, bonding characteristic, as well as the topological property. Such a parameter-free universality is never observed in their three-dimensional counterparts. By deriving a simple expression for the 2D polarizability merely with respect to Eg, and adopting the screened hydrogen model for Eb, the linear scaling law can be deduced analytically. This work provides an opportunity to better understand the fantastic consequence of the 2D nature for materials, and thus offers valuable guidance for their property modulation and performance control.

Observing Imperfection in Atomic Interfaces for van der Waals Heterostructures.

Science.gov (United States)

Rooney, Aidan P; Kozikov, Aleksey; Rudenko, Alexander N; Prestat, Eric; Hamer, Matthew J; Withers, Freddie; Cao, Yang; Novoselov, Kostya S; Katsnelson, Mikhail I; Gorbachev, Roman; Haigh, Sarah J

2017-09-13

Vertically stacked van der Waals heterostructures are a lucrative platform for exploring the rich electronic and optoelectronic phenomena in two-dimensional materials. Their performance will be strongly affected by impurities and defects at the interfaces. Here we present the first systematic study of interfaces in van der Waals heterostructure using cross-sectional scanning transmission electron microscope (STEM) imaging. By measuring interlayer separations and comparing these to density functional theory (DFT) calculations we find that pristine interfaces exist between hBN and MoS 2 or WS 2 for stacks prepared by mechanical exfoliation in air. However, for two technologically important transition metal dichalcogenide (TMDC) systems, MoSe 2 and WSe 2 , our measurement of interlayer separations provide the first evidence for impurity species being trapped at buried interfaces with hBN interfaces that are flat at the nanometer length scale. While decreasing the thickness of encapsulated WSe 2 from bulk to monolayer we see a systematic increase in the interlayer separation. We attribute these differences to the thinnest TMDC flakes being flexible and hence able to deform mechanically around a sparse population of protruding interfacial impurities. We show that the air sensitive two-dimensional (2D) crystal NbSe 2 can be fabricated into heterostructures with pristine interfaces by processing in an inert-gas environment. Finally we find that adopting glovebox transfer significantly improves the quality of interfaces for WSe 2 compared to processing in air.

Large-area and bright pulsed electroluminescence in monolayer semiconductors

KAUST Repository

Lien, Der-Hsien; Amani, Matin; Desai, Sujay B.; Ahn, Geun Ho; Han, Kevin; He, Jr-Hau; Ager, Joel W.; Wu, Ming C.; Javey, Ali

2018-01-01

Transition-metal dichalcogenide monolayers have naturally terminated surfaces and can exhibit a near-unity photoluminescence quantum yield in the presence of suitable defect passivation. To date, steady-state monolayer light-emitting devices suffer from Schottky contacts or require complex heterostructures. We demonstrate a transient-mode electroluminescent device based on transition-metal dichalcogenide monolayers (MoS, WS, MoSe, and WSe) to overcome these problems. Electroluminescence from this dopant-free two-terminal device is obtained by applying an AC voltage between the gate and the semiconductor. Notably, the electroluminescence intensity is weakly dependent on the Schottky barrier height or polarity of the contact. We fabricate a monolayer seven-segment display and achieve the first transparent and bright millimeter-scale light-emitting monolayer semiconductor device.

Large-area and bright pulsed electroluminescence in monolayer semiconductors

KAUST Repository

Lien, Der-Hsien

2018-04-04

Transition-metal dichalcogenide monolayers have naturally terminated surfaces and can exhibit a near-unity photoluminescence quantum yield in the presence of suitable defect passivation. To date, steady-state monolayer light-emitting devices suffer from Schottky contacts or require complex heterostructures. We demonstrate a transient-mode electroluminescent device based on transition-metal dichalcogenide monolayers (MoS, WS, MoSe, and WSe) to overcome these problems. Electroluminescence from this dopant-free two-terminal device is obtained by applying an AC voltage between the gate and the semiconductor. Notably, the electroluminescence intensity is weakly dependent on the Schottky barrier height or polarity of the contact. We fabricate a monolayer seven-segment display and achieve the first transparent and bright millimeter-scale light-emitting monolayer semiconductor device.

Electric-field switching of two-dimensional van der Waals magnets

Science.gov (United States)

Jiang, Shengwei; Shan, Jie; Mak, Kin Fai

2018-05-01

Controlling magnetism by purely electrical means is a key challenge to better information technology1. A variety of material systems, including ferromagnetic (FM) metals2-4, FM semiconductors5, multiferroics6-8 and magnetoelectric (ME) materials9,10, have been explored for the electric-field control of magnetism. The recent discovery of two-dimensional (2D) van der Waals magnets11,12 has opened a new door for the electrical control of magnetism at the nanometre scale through a van der Waals heterostructure device platform13. Here we demonstrate the control of magnetism in bilayer CrI3, an antiferromagnetic (AFM) semiconductor in its ground state12, by the application of small gate voltages in field-effect devices and the detection of magnetization using magnetic circular dichroism (MCD) microscopy. The applied electric field creates an interlayer potential difference, which results in a large linear ME effect, whose sign depends on the interlayer AFM order. We also achieve a complete and reversible electrical switching between the interlayer AFM and FM states in the vicinity of the interlayer spin-flip transition. The effect originates from the electric-field dependence of the interlayer exchange bias.

A.E.S. characterisation of small dimensional heterostructures

International Nuclear Information System (INIS)

Gelsthorpe, A.J.

2001-01-01

Surface analysis is used to examine the outer layers of solid material to determine their properties and composition, and has many applications in industry. Atomic composition of the surface can be determined by Auger analysis. Depth profiles can also be obtained by exposing layers buried within a structure and then analysing them. This thesis presents improved techniques for analysing complex structures that have multiple thin layers or have significant topographical features. Bevelling techniques can be used to produce depth profiles of complex heterostructures by removing surface layers with a bevel. The work presented here shows the development of a chemical bevelling reactor to produce a system that is routinely used to make bevels on samples. The chemical bevelling reactor can also be used to correct for non-linear effects in the slope of the surface of the bevel that are usually present in other bevelling techniques. Chemical bevelling shows significant improvements in the depth resolution over the existing technique of ion beam milling. Artefacts due to surface topography are a common problem in Auger analysis as it is often difficult to identify the correct Auger reading from the artefact. A Cylindrical Mirror Analyser (CMA) described here, has been modified to detect artefacts. It uses three pairs of opposing detectors that observe 6 angles of azimuth simultaneously. The opposing detectors are used to identify topographical artefacts in two dimensions across the surface. The CMA also incorporates an electrostatic lens that deflects electrons onto the detectors along the same path independent of their energy. The operation and characterisation of the modified CMA and its electrostatic lens is described. Application to topographical features that show artefacts is also described. The CMA system can also be used to perform depth profiling by ion beam bevelling. This technique is applied to multi-layered heterostructures and a comparison is made between this

Controllable Schottky barrier in GaSe/graphene heterostructure: the role of interface dipole

Science.gov (United States)

Si, Chen; Lin, Zuzhang; Zhou, Jian; Sun, Zhimei

2017-03-01

The discoveries of graphene and other related two-dimensional crystals have recently led to a new technology: van der Waals (vdW) heterostructures based on these atomically thin materials. Such a paradigm has been proved promising for a wide range of applications from nanoelectronics to optoelectronics and spintronics. Here, using first-principles calculations, we investigate the electronic structure and interface characteristics of a newly synthesized GaSe/graphene (GaSe/g) vdW heterostructure. We show that the intrinsic electronic properties of GaSe and graphene are both well preserved in the heterostructure, with a Schottky barrier formed at the GaSe/g interface. More interestingly, the band alignment between graphene and GaSe can be effectively modulated by tuning the interfacial distance or applying an external electric filed. This makes the Schottky barrier height (SBH) controllable, which is highly desirable in the electronic and optoelectronic devices based on vdW heterostructures. In particular, the tunability of the interface dipole and potential step is further uncovered to be the underlying mechanism that ensures this controllable tuning of SBH.

In situ catalytic growth of large-area multilayered graphene/MoS2 heterostructures

Science.gov (United States)

Fu, Wei; Du, Fei-Hu; Su, Juan; Li, Xin-Hao; Wei, Xiao; Ye, Tian-Nan; Wang, Kai-Xue; Chen, Jie-Sheng

2014-04-01

Stacking various two-dimensional atomic crystals on top of each other is a feasible approach to create unique multilayered heterostructures with desired properties. Herein for the first time, we present a controlled preparation of large-area graphene/MoS2 heterostructures via a simple heating procedure on Mo-oleate complex coated sodium sulfate under N2 atmosphere. Through a direct in situ catalytic reaction, graphene layer has been uniformly grown on the MoS2 film formed by the reaction of Mo species with S pecies, which is from the carbothermal reduction of sodium sulfate. Due to the excellent graphene ``painting'' on MoS2 atomic layers, the significantly shortened lithium ion diffusion distance and the markedly enhanced electronic conductivity, these multilayered graphene/MoS2 heterostructures exhibit high specific capacity, unprecedented rate performance and outstanding cycling stability, especially at a high current density, when used as an anode material for lithium batteries. This work provides a simple but efficient route for the controlled fabrication of large-area multilayered graphene/metal sulfide heterostructures with promising applications in battery manufacture, electronics or catalysis.

Growth and Device Performance of AlGaN/GaN Heterostructure with AlSiC Precoverage on Silicon Substrate

Directory of Open Access Journals (Sweden)

Jae-Hoon Lee

2014-01-01

Full Text Available A crack-free AlGaN/GaN heterostructure was grown on 4-inch Si (111 substrate with initial dot-like AlSiC precoverage layer. It is believed that introducing the AlSiC layer between AlN wetting layer and Si substrate is more effective in obtaining a compressively stressed film growth than conventional Al precoverage on Si surface. The metal semiconductor field effect transistor (MESFET, fabricated on the AlGaN/GaN heterostructure grown with the AlSiC layer, exhibited normally on characteristics, such as threshold voltage of −2.3 V, maximum drain current of 370 mA/mm, and transconductance of 124 mS/mm.

General Considerations of the Electrostatic Boundary Conditions in Oxide Heterostructures

Energy Technology Data Exchange (ETDEWEB)

Higuchi, Takuya

2011-08-19

When the size of materials is comparable to the characteristic length scale of their physical properties, novel functionalities can emerge. For semiconductors, this is exemplified by the 'superlattice' concept of Esaki and Tsu, where the width of the repeated stacking of different semiconductors is comparable to the 'size' of the electrons, resulting in novel confined states now routinely used in opto-electronics. For metals, a good example is magnetic/non-magnetic multilayer films that are thinner than the spin-scattering length, from which giant magnetoresistance (GMR) emerged, used in the read heads of hard disk drives. For transition metal oxides, a similar research program is currently underway, broadly motivated by the vast array of physical properties that they host. This long-standing notion has been recently invigorated by the development of atomic-scale growth and probe techniques, which enables the study of complex oxide heterostructures approaching the precision idealized in Fig. 1(a). Taking the subset of oxides derived from the perovskite crystal structure, the close lattice match across many transition metal oxides presents the opportunity, in principle, to develop a 'universal' heteroepitaxial materials system. Hand-in-hand with the continual improvements in materials control, an increasingly relevant challenge is to understand the consequences of the electrostatic boundary conditions which arise in these structures. The essence of this issue can be seen in Fig. 1(b), where the charge sequence of the sublayer 'stacks' for various representative perovskites is shown in the ionic limit, in the (001) direction. To truly 'universally' incorporate different properties using different materials components, be it magnetism, ferroelectricity, superconductivity, etc., it is necessary to access and join different charge sequences, labelled here in analogy to the designations 'group IV, III-V, II

Photocatalysis-Based Nanoprobes Using Noble Metal-Semiconductor Heterostructure for Visible Light-Driven in Vivo Detection of Mercury.

Science.gov (United States)

Zhi, Lihua; Zeng, Xiaofan; Wang, Hao; Hai, Jun; Yang, Xiangliang; Wang, Baodui; Zhu, Yanhong

2017-07-18

The development of sensitive and reliable methods to monitor the presence of mercuric ions in cells and organisms is of great importance to biological research and biomedical applications. In this work, we propose a strategy to construct a solar-driven nanoprobe using a 3D Au@MoS 2 heterostructure as a photocatalyst and rhodamine B (RB) as a fluorescent and color change reporter molecule for monitoring Hg 2+ in living cells and animals. The sensing mechanism is based on the photoinduced electron formation of gold amalgam in the 3D Au@MoS 2 heterostructure under visible light illumination. This formation is able to remarkably inhibit the photocatalytic activity of the heterostructure toward RB decomposition. As a result, "OFF-ON" fluorescence and color change are produced. Such characteristics enable this new sensing platform to sensitively and selectively detect Hg 2+ in water by fluorescence and colorimetric methods. The detection limits of the fluorescence assay and colorimetric assay are 0.22 and 0.038 nM for Hg 2+ , respectively; these values are well below the acceptable limits in drinking water standards (10 nM). For the first time, such photocatalysis-based sensing platform is successfully used to monitor Hg 2+ in live cells and mice. Our work therefore opens a promising photocatalysis-based analysis methodology for highly sensitive and selective in vivo Hg 2+ bioimaging studies.

CdSe/beta-Pb0.33V2O5 heterostructures: Nanoscale semiconductor interfaces with tunable energetic configurations for solar energy conversion and storage

Science.gov (United States)

Milleville, Christopher C.

This dissertation focuses on the formation and characterization of semiconductor heterostructures, consisting of light-harvesting cadmium selenide quantum dots (CdSe QDs) and single crystalline lead vanadium oxide nanowires (β-Pb0.33V2O5 NWs), for the purpose of excited-state charge transfer and photocatalytic production of solar fuels. We reported two distinct routes for assembling CdSe/β-Pb0.33V2O5 heterostructures: linker-assisted assembly (LAA) mediated by a bifunctional ligand and successive ionic layer adsorption and reaction (SILAR). In the former case, the thiol end of a molecular linker, cysteine (Cys) is found to bind to the QD surface, whereas a protonated amine moiety interacts electrostatically with the negatively charged NW surface. In the alternative SILAR route, the surface coverage of CdSe on the β-Pb0.33V2O5 NWs is tuned by varying the number of successive precipitation cycles. Hard X-ray photoelectron spectroscopy (HAXPES) measurements revealed that the mid-gap states of β-Pb0.33V2O5 NWs are closely overlapped in energy with the valence band edges of CdSe QDs, suggesting that hole transfer from the valence band of CdSe into the mid-gap states is possible. Preliminary evidence of hole transfer was obtained through photoluminescence quenching experiments. Steady-state and time-resolved photoluminescence measurements on Cys-CdSe dispersions, mixed dispersions of Cys-CdSe QDs and β-Pb0.33V¬2O5 NWs, and mixed dispersions of Cys-CdS QDs and V2O5 revealed a greater extent of quenching of the emission of Cys-CdSe QDs by β Pb0.33V¬2O5 relative to V2O5. V2O5, devoid of mid-gap states, is unable to accept holes from CdSe and therefore should not quench emission to the same extent as β-Pb0.33V¬2O5. The additional quenching was dynamic, consistent with a mechanism involving the transfer of photogenerated holes from CdSe QDs to the mid-gap states of β Pb0.33V2O5. Transient absorption spectroscopy (TA) was used to probe the dynamics of interfacial

NaCl-assisted one-step growth of MoS2-WS2 in-plane heterostructures

Science.gov (United States)

Wang, Zhan; Xie, Yong; Wang, Haolin; Wu, Ruixue; Nan, Tang; Zhan, Yongjie; Sun, Jing; Jiang, Teng; Zhao, Ying; Lei, Yimin; Yang, Mei; Wang, Weidong; Zhu, Qing; Ma, Xiaohua; Hao, Yue

2017-08-01

Transition metal dichalcogenides (TMDs) have attracted considerable interest for exploration of next-generation electronics and optoelectronics in recent years. Fabrication of in-plane lateral heterostructures between TMDs has opened up excellent opportunities for engineering two-dimensional materials. The creation of high quality heterostructures with a facile method is highly desirable but it still remains challenging. In this work, we demonstrate a one-step growth method for the construction of high-quality MoS2-WS2 in-plane heterostructures. The synthesis was carried out using ambient pressure chemical vapor deposition (APCVD) with the assistance of sodium chloride (NaCl). It was found that the addition of NaCl played a key role in lowering the growth temperatures, in which the Na-containing precursors could be formed and condensed on the substrates to reduce the energy of the reaction. As a result, the growth regimes of MoS2 and WS2 are better matched, leading to the formation of in-plane heterostructures in a single step. The heterostructures were proved to be of high quality with a sharp and clear interface. This newly developed strategy with the assistance of NaCl is promising for synthesizing other TMDs and their heterostructures.

effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis

Energy Technology Data Exchange (ETDEWEB)

Tsatsulnikov, A. F., E-mail: andrew@beam.ioffe.ru [Russian Academy of Sciences, Submicron Heterostructures for Microelectronics Research and Engineering Center (Russian Federation); Lundin, V. W.; Zavarin, E. E.; Yagovkina, M. A.; Sakharov, A. V. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Usov, S. O. [Russian Academy of Sciences, Submicron Heterostructures for Microelectronics Research and Engineering Center (Russian Federation); Zemlyakov, V. E.; Egorkin, V. I. [National Research University of Electronic Technology (MIET) (Russian Federation); Bulashevich, K. A.; Karpov, S. Yu. [“Soft-Impact” Ltd. (Russian Federation); Ustinov, V. M. [Russian Academy of Sciences, Submicron Heterostructures for Microelectronics Research and Engineering Center (Russian Federation)

2016-10-15

The effect of the layer thickness and composition in AlGaN/AlN/GaN and InAlN/AlN/GaN transistor heterostructures with a two-dimensional electron gas on their electrical and the static parameters of test transistors fabricated from such heterostructures are experimentally and theoretically studied. It is shown that the use of an InAlN barrier layer instead of AlGaN results in a more than twofold increase in the carrier concentration in the channel, which leads to a corresponding increase in the saturation current. In situ dielectric-coating deposition on the InAlN/AlN/GaN heterostructure surface during growth process allows an increase in the maximum saturation current and breakdown voltages while retaining high transconductance.

Theoretical investigation of spin-filtering in CrAs/GaAs heterostructures

International Nuclear Information System (INIS)

Stickler, B. A.; Ertler, C.; Pötz, W.; Chioncel, L.

2013-01-01

The electronic structure of bulk zinc-blende GaAs, zinc-blende and tetragonal CrAs, and CrAs/GaAs supercells, computed within linear muffin-tin orbital (LMTO) local spin-density functional theory, is used to extract the band alignment for the [1,0,0] GaAs/CrAs interface in dependence of the spin orientation. With the lateral lattice constant fixed to the experimental bulk GaAs value, a local energy minimum is found for a tetragonal CrAs unit cell with a longitudinal ([1,0,0]) lattice constant reduced by ≈2%. Due to the identified spin-dependent band alignment, half-metallicity of CrAs no longer is a key requirement for spin-filtering. Based on these findings, we study the spin-dependent tunneling current in [1,0,0] GaAs/CrAs/GaAs heterostructures within the non-equilibrium Green's function approach for an effective tight-binding Hamiltonian derived from the LMTO electronic structure. Results indicate that these heterostructures are promising candidates for efficient room-temperature all-semiconductor spin-filtering devices

The Integration of Bacteriorhodopsin Proteins with Semiconductor Heterostructure Devices

Science.gov (United States)

Xu, Jian

2008-03-01

Bioelectronics has emerged as one of the most rapidly developing fields among the active frontiers of interdisciplinary research. A major thrust in this field is aimed at the coupling of the technologically-unmatched performance of biological systems, such as neural and sensing functions, with the well developed technology of microelectronics and optoelectronics. To this end we have studied the integration of a suitably engineered protein, bacteriorhodopsin (BR), with semiconductor optoelectronic devices and circuits. Successful integration will potentially lead to ultrasensitive sensors with polarization selectivity and built-in preprocessing capabilities that will be useful for high speed tracking, motion and edge detection, biological detection, and artificial vision systems. In this presentation we will summarize our progresses in this area, which include fundamental studies on the transient dynamics of photo-induced charge shift in BR and the coupling mechanism at protein-semiconductor interface for effective immobilizing and selectively integrating light sensitive proteins with microelectronic devices and circuits, and the device engineering of BR-transistor-integrated optical sensors as well as their applications in phototransceiver circuits. Work done in collaboration with Pallab Bhattacharya, Jonghyun Shin, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI; Robert R. Birge, Department of Chemistry, University of Connecticut, Storrs, CT 06269; and György V'ar'o, Institute of Biophysics, Biological Research Center of the Hungarian Academy of Science, H-6701 Szeged, Hungary.

Topological properties and correlation effects in oxide heterostructures

Science.gov (United States)

Okamoto, Satoshi

2015-03-01

Transition-metal oxides (TMOs) have long been one of the main subjects of material science because of their novel functionalities such as high-Tc superconductivity in cuprates and the colossal magnetoresistance effect in manganites. In recent years, we have seen tremendous developments in thin film growth techniques with the atomic precision, resulting in the discovery of a variety of electronic states in TMO heterostructures. These developments motivate us to explore the possibility of novel quantum states of matter such as topological insulators (TIs) in TMO heterostructures. In this talk, I will present our systematic theoretical study on unprecedented electronic states in TMO heterostructures. An extremely simple but crucial observation is that, when grown along the [111] crystallographic axis, bilayers of perovskite TMOs form buckled honeycomb lattices of transition-metal ions, similar to graphene. Thus, with the relativistic spin-orbit coupling and proper band filling, two-dimensional TI states or spin Hall insulators are anticipated. Based on tight-binding modeling and density-functional theory calculations, possible candidate materials for TIs are identified. By means of the dynamical-mean-field theory and a slave-boson mean field theory, correlation effects, characteristics of TMOs, are also examined. I will further discuss future prospects in topological phenomena in TMO heterostructures and related systems. The author thanks D. Xiao, W. Zhu, Y. Ran, R. Arita, Y. Nomura and N. Nagaosa for their fruitful discussions and collaboration. This work is supported by the U.S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division.

Laterally Stitched Heterostructures of Transition Metal Dichalcogenide: Chemical Vapor Deposition Growth on Lithographically Patterned Area

KAUST Repository

Li, Henan; Li, Peng; Huang, Jing Kai; Li, Ming-yang; Yang, Chih-Wen; Shi, Yumeng; Zhang, Xixiang; Li, Lain-Jong

2016-01-01

Two-dimensional transition metal dichalcogenides (TMDCs) have shown great promise in electronics and optoelectronics due to their unique electrical and optical properties. Heterostructured TMDC layers such as the laterally stitched TMDCs offer

Solution-Processed Dielectrics Based on Thickness-Sorted Two-Dimensional Hexagonal Boron Nitride Nanosheets

Energy Technology Data Exchange (ETDEWEB)

Zhu, Jian; Kang, Joohoon; Kang, Junmo; Jariwala, Deep; Wood, Joshua D.; Seo, Jung-Woo T.; Chen, Kan-Sheng; Marks, Tobin J.; Hersam, Mark C.

2015-10-14

Gate dielectrics directly affect the mobility, hysteresis, power consumption, and other critical device metrics in high-performance nanoelectronics. With atomically flat and dangling bond-free surfaces, hexagonal boron nitride (h-BN) has emerged as an ideal dielectric for graphene and related two-dimensional semiconductors. While high-quality, atomically thin h-BN has been realized via micromechanical cleavage and chemical vapor deposition, existing liquid exfoliation methods lack sufficient control over h-BN thickness and large-area film quality, thus limiting its use in solution-processed electronics. Here, we employ isopycnic density gradient ultracentrifugation for the preparation of monodisperse, thickness-sorted h-BN inks, which are subsequently layer-by-layer assembled into ultrathin dielectrics with low leakage currents of 3 × 10–9 A/cm2 at 2 MV/cm and high capacitances of 245 nF/cm2. The resulting solution-processed h-BN dielectric films enable the fabrication of graphene field-effect transistors with negligible hysteresis and high mobilities up to 7100 cm2 V–1 s–1 at room temperature. These h-BN inks can also be used as coatings on conventional dielectrics to minimize the effects of underlying traps, resulting in improvements in overall device performance. Overall, this approach for producing and assembling h-BN dielectric inks holds significant promise for translating the superlative performance of two-dimensional heterostructure devices to large-area, solution-processed nanoelectronics.

Formation Process and Properties of Ohmic Contacts Containing Molybdenum to AlGaN/GaN Heterostructures

Directory of Open Access Journals (Sweden)

Wojciech Macherzynski

2016-01-01

Full Text Available Properties of wide bandgap semiconductors as chemical inertness to harsh conditions and possibility of working at high temperature ensure possible applications in the field as military, aerospace, automotive, engine monitoring, flame detection and solar UV detection. Requirements for ohmic contacts in semiconductor devices are determined by the proposed application. These contacts to AlGaN/GaN heterostructure for application as high temperature, high frequency and high power devices have to exhibit good surface morphology and low contact resistance. The latter is a crucial factor in limiting the development of high performance AlGaN/GaN devices. Lowering of the resistance is assured by rapid thermal annealing process. The paper present studies of Ti/Al/Mo/Au ohmic contacst annealed at temperature range from 825°C to 885°C in N2 atmosphere. The electrical parameters of examined samples as a function of the annealing process condition have been studied. Initially the annealing temperature increase caused lowering of the contacts resistance. The lowest value was noticed for the temperature of annealing equal to 885°C. Further increase of annealing temperature led to deterioration of contact resistance of investigated ohmic contacts.

Spectroscopy and dynamics of charge transfer excitons in type-II band aligned quantum confined heterostructures

Energy Technology Data Exchange (ETDEWEB)

Kushavah, Dushyant [Centre for Research in Nanotechnology and Science, IIT Bombay-400076, Mumbai (India); Mohapatra, P. K.; Vasa, P.; Singh, B. P., E-mail: bhanups@iitb.ac.in [Department of physics, IIT Bombay, Mumbai-400076 (India); Rustagi, K. C. [Indian Institute of Science Education and Research Bhopal-462066, Bhopal (India); Bahadur, D. [Department of Metallurgical Engineering and Materials Science, IIT Bombay, Mumbai-400076 (India)

2015-05-15

We illustrate effect of charge transfer (CT) in type-II quantum confined heterostructure by comparing CdSe quantum dots (QDs), CdSe/CdTe heterostructure quantum dots (HQDs) and CdSe/CdTe/CdSe quantum well-quantum dots (QWQDs) heterostructures. CdSe core QDs were synthesized using a kinetic growth method where QD size depends on reaction time. For shell coating we used modified version of successive ionic layer adsorption and reaction (SILAR). Size of different QDs ∼5 to 7 nm were measured by transmission electron microscopy (TEM). Strong red shift from ∼597 to ∼746 nm in photoluminescence (PL) spectra from QDs to QWQDs shows high tunability which is not possible with single constituent semiconductor QDs. PL spectra have been recorded at different temperatures (10K-300K). Room temperature time correlated single photon counting (TCSPC) measurements for QDs to QWQDs show three exponential radiative decay. The slowest component decay constant in QWQDs comes around eight fold to ∼51 ns as compared to ∼6.5 ns in HQD suggesting new opportunities to tailor the radiative carrier recombination rate of CT excitons.

Studies of optical properties and applications of some mixed ternary semiconductors

International Nuclear Information System (INIS)

Ghosh, P.S.; Ghosh, D.K.; Samanta, L.K.

1989-01-01

Refractive indices of some mixed compound semiconductors below the bandgap are presented on the basis of some fundamental parameters and the effect of lattice mismatch on the refractive index step is also studied. The results help to design a variety of opto-electronic devices for the use in optical fiber communication and heterostructure lasers. The calculated values agree well with available experimental values thus justifying the approach. (author)

Optical phonon scattering on electronic mobility in Al2O3/AlGaN/AlN/GaN heterostructures

Science.gov (United States)

Zhou, X. J.; Qu, Y.; Ban, S. L.; Wang, Z. P.

2017-12-01

Considering the built-in electric fields and the two-mode property of transverse optical phonons in AlGaN material, the electronic eigen-energies and wave functions are obtained by solving Schrödinger equation with the finite difference method. The dispersion relations and potentials of the optical phonons are given by the transfer matrix method. The mobility of the two dimensional electron gas influenced by the optical phonons in Al2O3/AlGaN/AlN/GaN heterostructures is investigated based on the theory of Lei-Ting force balance equation. It is found that the scattering from the half-space phonons is the main factor affecting the electronic mobility, and the influence of the other phonons can be ignored. The results show that the mobility decreases with increasing the thicknesses of Al2O3 and AlN layers, but there is no definite relationship between the mobility and the thickness of AlGaN barrier. The mobility is obviously reduced by increasing Al component in AlGaN crystal to show that the effect of ternary mixed crystals is important. It is also found that the mobility increases first and then decreases as the increment of the fixed charges, but decreases always with increasing temperature. The heterostructures constructed here can be good candidates as metal-oxide-semiconductor high-electron-mobility-transistors since they have higher electronic mobility due to the influence from interface phonons weakened by the AlN interlayer.

Electric field modulation of electronic structures in InSe and black phosphorus heterostructure

Science.gov (United States)

Ding, Yi-min; Shi, Jun-jie; Zhang, Min; Xia, Congxin; Wu, Meng; Wang, Hui; Cen, Yu-lang; Pan, Shu-hang

2018-01-01

The electronic structures of InSe and black phosphorus (BP) heterostructure modulated by an external electric field (E⊥) have been investigated based on first-principles calculations. We find that InSe/BP has type II band offset with a direct band gap of 0.39 eV, and the electrons (holes) are spatially located in InSe (BP) layer. Meanwhile, the band structures of InSe/BP can be effectively modulated by E⊥. The band gap shows linear variation with E⊥ and its maximum of 0.69 eV is observed when E⊥ is 0.4 V / Å. The InSe/BP experiences a transition from semiconductor to metal with E⊥ of -0.6 and 0.8 V / Å. The band offsets are also modulated by E⊥, resulting in different spatial distribution of electron-hole pairs. Most importantly, the high carrier mobility can be preserved well under E⊥. Our results show that the novel InSe/BP heterostructure has great potential application in electronic and optoelectronic devices.

Coupling effects in heterostructures of pentacene and perfluorinated pentacene studied by optical spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Broch, Katharina; Heinemeyer, Ute; Hinderhofer, Alexander; Gerlach, Alexander; Schreiber, Frank [Institut fuer Angewandte Physik, Tuebingen (Germany); Anger, Falk [Institut fuer Angewandte Physik, Tuebingen (Germany); MATGAS 2000 AIE, Campus de la UAB, Bellaterra (Spain); Osso, Oriol [MATGAS 2000 AIE, Campus de la UAB, Bellaterra (Spain); Scholz, Reinhard [Walter Schottky Institut, Technische Universitaet Muenchen, Garching (Germany)

2010-07-01

Heterostructures of organic semiconductors gain increasing interest in the last years because of their potential applications in organic electronics. To optimize those devices the understanding of the intermolecular coupling is crucial. Therefore, we investigate the optical absorption spectra of heterostructures and possible differences to the spectra of their single components. The combination of pentacene (PEN) with perfluorinated pentacene (PFP) is promising due to their similar geometric structure which can give rise to coevaporated films with a significant level of intermixing and accordingly an efficient intermolecular coupling. Indeed, performing in-situ-measurements with differential reflectance spectroscopy and spectroscopic ellipsometry we find features in the absorption spectra of mixed films that cannot be explained by a linear combination of the single film spectra. In the energy range between 1.4 eV and 2.4 eV spectra of PFP and PEN single and coevaporated films with different mixing ratios are compared and possible theoretical scenarios for coupling effects are discussed.

Investigation of the compositional depth profile in epitaxial submicrometer layers of AIIIBV heterostructures

International Nuclear Information System (INIS)

Baumbach, T.; Bruehl, H.G.; Rhan, H.; Pietsch, U.

1988-01-01

The compositional depth profile in semiconductor heterostructures can be determined from X-ray diffraction patterns. Different grading profiles were studied through theoretical simulations with regard to their features in the rocking curve. It was found that the thickness and the grading of a particular layer cannot be determined independently of each other. A linear grading gives rise to an increased peak width of the layer diffraction peak whereas an exponential grading can be detected from the damping of high-order interference fringes. The exponential model can be applied to determine the abruptness of the heterointerfaces. The proposed evaluation method of experimental rocking curves includes the case of overlapping peaks of the layer and the substrate diffraction. The simulation results are discussed for a GaAs/Ga 1-x Al x As/GaAs[100] double heterostructure. When the experimental resolution is taken into account, the sensitivity of the interface width determination was 100-200 A. (orig.)

Voltage control of magnetism in multiferroic heterostructures.

Science.gov (United States)

Liu, Ming; Sun, Nian X

2014-02-28

Electrical tuning of magnetism is of great fundamental and technical importance for fast, compact and ultra-low power electronic devices. Multiferroics, simultaneously exhibiting ferroelectricity and ferromagnetism, have attracted much interest owing to the capability of controlling magnetism by an electric field through magnetoelectric (ME) coupling. In particular, strong strain-mediated ME interaction observed in layered multiferroic heterostructures makes it practically possible for realizing electrically reconfigurable microwave devices, ultra-low power electronics and magnetoelectric random access memories (MERAMs). In this review, we demonstrate this remarkable E-field manipulation of magnetism in various multiferroic composite systems, aiming at the creation of novel compact, lightweight, energy-efficient and tunable electronic and microwave devices. First of all, tunable microwave devices are demonstrated based on ferrite/ferroelectric and magnetic-metal/ferroelectric composites, showing giant ferromagnetic resonance (FMR) tunability with narrow FMR linewidth. Then, E-field manipulation of magnetoresistance in multiferroic anisotropic magnetoresistance and giant magnetoresistance devices for achieving low-power electronic devices is discussed. Finally, E-field control of exchange-bias and deterministic magnetization switching is demonstrated in exchange-coupled antiferromagnetic/ferromagnetic/ferroelectric multiferroic hetero-structures at room temperature, indicating an important step towards MERAMs. In addition, recent progress in electrically non-volatile tuning of magnetic states is also presented. These tunable multiferroic heterostructures and devices provide great opportunities for next-generation reconfigurable radio frequency/microwave communication systems and radars, spintronics, sensors and memories.

Tuning the Schottky rectification in graphene-hexagonal boron nitride-molybdenum disulfide heterostructure.

Science.gov (United States)

Liu, Biao; Zhao, Yu-Qing; Yu, Zhuo-Liang; Wang, Lin-Zhi; Cai, Meng-Qiu

2018-03-01

It was still a great challenge to design high performance of rectification characteristic for the rectifier diode. Lately, a new approach was proposed experimentally to tune the Schottky barrier height (SBH) by inserting an ultrathin insulated tunneling layer to form metal-insulator-semiconductor (MIS) heterostructures. However, the electronic properties touching off the high performance of these heterostructures and the possibility of designing more efficient applications for the rectifier diode were not presently clear. In this paper, the structural, electronic and interfacial properties of the novel MIS diode with the graphene/hexagonal boron nitride/monolayer molybdenum disulfide (GBM) heterostructure had been investigated by first-principle calculations. The calculated results showed that the intrinsic properties of graphene and MoS 2 were preserved due to the weak van der Waals contact. The height of interfacial Schottky barrier can be tuned by the different thickness of hBN layers. In addition, the GBM Schottky diode showed more excellent rectification characteristic than that of GM Schottky diode due to the interfacial band bending caused by the epitaxial electric field. Based on the electronic band structure, we analyzed the relationship between the electronic structure and the nature of the Schottky rectifier, and revealed the potential of utilizing GBM Schottky diode for the higher rectification characteristic devices. Copyright © 2017 Elsevier Inc. All rights reserved.

Acousto-optical interaction of surface acoustic and optical waves in a two-dimensional phoxonic crystal hetero-structure cavity.

Science.gov (United States)

Ma, Tian-Xue; Zou, Kui; Wang, Yue-Sheng; Zhang, Chuanzeng; Su, Xiao-Xing

2014-11-17

Phoxonic crystal is a promising material for manipulating sound and light simultaneously. In this paper, we theoretically demonstrate the propagation of acoustic and optical waves along the truncated surface of a two-dimensional square-latticed phoxonic crystal. Further, a phoxonic crystal hetero-structure cavity is proposed, which can simultaneously confine surface acoustic and optical waves. The interface motion and photoelastic effects are taken into account in the acousto-optical coupling. The results show obvious shifts in eigenfrequencies of the photonic cavity modes induced by different phononic cavity modes. The symmetry of the phononic cavity modes plays a more important role in the single-phonon exchange process than in the case of the multi-phonon exchange. Under the same deformation, the frequency shift of the photonic transverse electric mode is larger than that of the transverse magnetic mode.

Surface donor states distribution post SiN passivation of AlGaN/GaN heterostructures

Energy Technology Data Exchange (ETDEWEB)

Goyal, Nitin, E-mail: nitin@unik.no [Carinthian Tech Research CTR AG, Europastraße 4/1, Technologiepark Villach, A- 9524 Villach/St. Magdalen (Austria); Department of Electronics and Telecommunication, Norwegian University of Science and Technology, Trondheim NO7034 (Norway); Fjeldly, Tor A. [Department of Electronics and Telecommunication, Norwegian University of Science and Technology, Trondheim NO7034 (Norway)

2014-07-21

In this paper, we present a physics based analytical model to describe the effect of SiN passivation on two-dimensional electron gas density and surface barrier height in AlGaN/GaN heterostructures. The model is based on an extraction technique to calculate surface donor density and surface donor level at the SiN/AlGaN interface. The model is in good agreement with the experimental results and promises to become a useful tool in advanced design and characterization of GaN based heterostructures.

How to measure the cooper pair mass using plasmons in low-dimensional superconductor structures

International Nuclear Information System (INIS)

Mishonov, T.M.

1990-06-01

The creation of the Cooper pair mass-spectroscopy is suggested. The plasmons in low-dimensional superconductor structures (layers or wires in dielectric background) are theoretically considered to that purpose. The Cooper pair mass m * can be determined by measurements of the Doppler shift of the plasmon frequency when a direct current is applied through the superconductor. The plasmons with frequency ω lower than the superconducting gap 2 Δ can be detected by the same fare-infrared (FIR) absorption technique and grating couplings used previously for investigation of two-dimension (2D) plasmons in semiconductor microstructures. (author). 17 refs, 2 figs

33rd International Conference on the Physics of Semiconductors

International Nuclear Information System (INIS)

2017-01-01

Preface to the Proceedings of the 33rd International Conference on the Physics of Semiconductors, Beijing, 2016 Shaoyun Huang 1 , Yingjie Xing 1 , Yang Ji 2 , Dapeng Yu 3 , and Hongqi Xu 1 1 Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China 2 SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China 3 State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871, China From July 31 st to August 5 th , 2016, the 33rd International Conference on the Physics of Semiconductors (ICPS 2016) was held in Beijing, China, with a great success. The International Conference on the Physics of Semiconductors began in the 1950’s and is a premier biennial meeting for reporting all aspects of semiconductor physics including electronic, structural, optical, magnetic and transport properties. Reflecting the state of the art developments in semiconductor physics, ICPS 2016 served as an international forum for scholars, researchers, and specialists across the globe to discuss future research directions and technological advancements. The main topics of ICPS 2016 included: • Material growth, structural properties and characterization, phonons • Wide-bandgap semiconductors • Narrow-bandgap semiconductors • Carbon: nanotubes and graphene • 2D Materials beyond graphene • Organic semiconductors • Topological states of matter, topological Insulators and Weyl semimetals • Transport in heterostructures • Quantum Hall effects • Spintronics and spin phenomena • Electron devices and applications • Optical properties, optoelectronics, solar cells • Quantum optics, nanophotonics • Quantum information • Other topics in semiconductor physics and devices • Special topic: Majorana fermions in solid state (paper)

Plasmonically Enhanced Reflectance of Heat Radiation from Low-Bandgap Semiconductor Microinclusions.

Science.gov (United States)

Tang, Janika; Thakore, Vaibhav; Ala-Nissila, Tapio

2017-07-18

Increased reflectance from the inclusion of highly scattering particles at low volume fractions in an insulating dielectric offers a promising way to reduce radiative thermal losses at high temperatures. Here, we investigate plasmonic resonance driven enhanced scattering from microinclusions of low-bandgap semiconductors (InP, Si, Ge, PbS, InAs and Te) in an insulating composite to tailor its infrared reflectance for minimizing thermal losses from radiative transfer. To this end, we compute the spectral properties of the microcomposites using Monte Carlo modeling and compare them with results from Fresnel equations. The role of particle size-dependent Mie scattering and absorption efficiencies, and, scattering anisotropy are studied to identify the optimal microinclusion size and material parameters for maximizing the reflectance of the thermal radiation. For composites with Si and Ge microinclusions we obtain reflectance efficiencies of 57-65% for the incident blackbody radiation from sources at temperatures in the range 400-1600 °C. Furthermore, we observe a broadbanding of the reflectance spectra from the plasmonic resonances due to charge carriers generated from defect states within the semiconductor bandgap. Our results thus open up the possibility of developing efficient high-temperature thermal insulators through use of the low-bandgap semiconductor microinclusions in insulating dielectrics.

Stacking order dependent mechanical properties of graphene/MoS{sub 2} bilayer and trilayer heterostructures

Energy Technology Data Exchange (ETDEWEB)

Elder, Robert M., E-mail: robert.elder26.ctr@mail.mil, E-mail: mahesh.neupane.ctr@mail.mil; Neupane, Mahesh R., E-mail: robert.elder26.ctr@mail.mil, E-mail: mahesh.neupane.ctr@mail.mil; Chantawansri, Tanya L. [U.S. Army Research Laboratory, Aberdeen Proving Ground, Maryland 21005 (United States)

2015-08-17

Transition metal dichalcogenides (TMDC) such as molybdenum disulfide (MoS{sub 2}) are two-dimensional materials that show promise for flexible electronics and piezoelectric applications, but their weak mechanical strength is a barrier to practical use. In this work, we perform nanoindentation simulations using atomistic molecular dynamics to study the mechanical properties of heterostructures formed by combining MoS{sub 2} with graphene. We consider both bi- and tri-layer heterostructures formed with MoS{sub 2} either supported or encapsulated by graphene. Mechanical properties, such as Young's modulus, bending modulus, ultimate tensile strength, and fracture strain, are extracted from nanoindentation simulations and compared to the monolayer and homogeneous bilayer systems. We observed that the heterostructures, regardless of the stacking order, are mechanically more robust than the mono- and bi-layer MoS{sub 2}, mainly due to the mechanical reinforcement provided by the graphene layer. The magnitudes of ultimate strength and fracture strain are similar for both the bi- and tri-layer heterostructures, but substantially larger than either the mono- and bi-layer MoS{sub 2}. Our results demonstrate the potential of graphene-based heterostructures to improve the mechanical properties of TMDC materials.

Measurement of the Auger lifetime in GaInAsSb/GaSb heterostructures using the photoacoustic technique

International Nuclear Information System (INIS)

Riech, I.; Gomez-Herrera, M. L.; Diaz, P.; Mendoza-Alvarez, J. G.; Herrera-Perez, J. L.; Marin, E.

2001-01-01

We have studied Ga x In 1-x As y Sb 1-y /GaSb heterostructures for x=0.84 and y=0.14 using the photoacoustic technique with the heat transmission configuration. A theoretical model, which includes all the possible nonradiative recombination mechanisms that contribute to heat generation, was developed to calculate the photoacoustic signal for this type of heterostructure. The Auger recombination lifetime τ Auger was determined by fitting our experimental results to the calculated frequency dependence of the theoretical photoacoustic signal. The obtained value for τ Auger is compatible with those reported in the literature for semiconductors with band-gap energies below and above 0.5 eV, the energy region where there is a lack of experimental τ Auger values. Copyright 2001 American Institute of Physics

Extraordinary Magnetoresistance Effect in Semiconductor/Metal Hybrid Structure

KAUST Repository

Sun, Jian

2013-06-27

In this dissertation, the extraordinary magnetoresistance (EMR) effect in semiconductor/metal hybrid structures is studied to improve the performance in sensing applications. Using two-dimensional finite element simulations, the geometric dependence of the output sensitivity, which is a more relevant parameter for EMR sensors than the magnetoresistance (MR), is studied. The results show that the optimal geometry in this case is different from the geometry reported before, where the MR ratio was optimized. A device consisting of a semiconductor bar with length/width ratio of 5~10 and having only 2 contacts is found to exhibit the highest sensitivity. A newly developed three-dimensional finite element model is employed to investigate parameters that have been neglected with the two dimensional simulations utilized so far, i.e., thickness of metal shunt and arbitrary semiconductor/metal interface. The simulations show the influence of those parameters on the sensitivity is up to 10 %. The model also enables exploring the EMR effect in planar magnetic fields. In case of a bar device, the sensitivity to planar fields is about 15 % to 20 % of the one to perpendicular fields. 5 A “top-contacted” structure is proposed to reduce the complexity of fabrication, where neither patterning of the semiconductor nor precise alignment is required. A comparison of the new structure with a conventionally fabricated device shows that a similar magnetic field resolution of 24 nT/√Hz is obtained. A new 3-contact device is developed improving the poor low-field sensitivity observed in conventional EMR devices, resulting from its parabolic magnetoresistance response. The 3-contact device provides a considerable boost of the low field response by combining the Hall effect with the EMR effect, resulting in an increase of the output sensitivity by 5 times at 0.01 T compared to a 2-contact device. The results of this dissertation provide new insights into the optimization of EMR devices

High-Responsivity Graphene-Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit.

Science.gov (United States)

Shiue, Ren-Jye; Gao, Yuanda; Wang, Yifei; Peng, Cheng; Robertson, Alexander D; Efetov, Dmitri K; Assefa, Solomon; Koppens, Frank H L; Hone, James; Englund, Dirk

2015-11-11

Graphene and other two-dimensional (2D) materials have emerged as promising materials for broadband and ultrafast photodetection and optical modulation. These optoelectronic capabilities can augment complementary metal-oxide-semiconductor (CMOS) devices for high-speed and low-power optical interconnects. Here, we demonstrate an on-chip ultrafast photodetector based on a two-dimensional heterostructure consisting of high-quality graphene encapsulated in hexagonal boron nitride. Coupled to the optical mode of a silicon waveguide, this 2D heterostructure-based photodetector exhibits a maximum responsivity of 0.36 A/W and high-speed operation with a 3 dB cutoff at 42 GHz. From photocurrent measurements as a function of the top-gate and source-drain voltages, we conclude that the photoresponse is consistent with hot electron mediated effects. At moderate peak powers above 50 mW, we observe a saturating photocurrent consistent with the mechanisms of electron-phonon supercollision cooling. This nonlinear photoresponse enables optical on-chip autocorrelation measurements with picosecond-scale timing resolution and exceptionally low peak powers.

Spin-dependent tunneling recombination in heterostructures with a magnetic layer

Energy Technology Data Exchange (ETDEWEB)

Denisov, K. S., E-mail: denisokonstantin@gmail.com; Rozhansky, I. V.; Averkiev, N. S. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Lähderanta, E. [Lappeenranta University of Technology (Finland)

2017-01-15

We propose a mechanism for the generation of spin polarization in semiconductor heterostructures with a quantum well and a magnetic impurity layer spatially separated from it. The spin polarization of carriers in a quantum well originates from spin-dependent tunneling recombination at impurity states in the magnetic layer, which is accompanied by a fast linear increase in the degree of circular polarization of photoluminescence from the quantum well. Two situations are theoretically considered. In the first case, resonant tunneling to the spin-split sublevels of the impurity center occurs and spin polarization is caused by different populations of resonance levels in the quantum well for opposite spin projections. In the second, nonresonant case, the spin-split impurity level lies above the occupied states of electrons in the quantum well and plays the role of an intermediate state in the two-stage coherent spin-dependent recombination of an electron from the quantum well and a hole in the impurity layer. The developed theory allows us to explain both qualitatively and quantitatively the kinetics of photoexcited electrons in experiments with photoluminescence with time resolution in Mn-doped InGaAs heterostructures.

Excitons in van der Waals Heterostructures: A theoretical study

DEFF Research Database (Denmark)

Latini, Simone

)electronics devices, e.g. light emitting diodes, solar cells, ultra-fast photodetectors, transistors etc., have been successfully fabricated. It is well established that for isolated 2D semiconductors and vdWHs the optical response is governed by excitonic effects. While it is understood that the reduced amount...... of electronic screening in freestanding 2D materials is the main origin of extraordinarily strongly bound excitons, a theoretical understanding of excitonic effects and of how the electronic screening is affected for the more complex case of multi-layer structures is still lacking due to the computational...... in a generalized hydrogenic model to compute exciton binding energies in isolated, supported, or encapsulated 2D semiconductors. The non-locality of the dielectric screening is inherently included in our method and we can successfully describe the non-hydrogenic Rydberg series of low-dimensional systems...

Low temperature route synthesis of SiC–Al2O3 hetero-structural nanofibers

International Nuclear Information System (INIS)

Dai, Xiao; Wang, Hao; Cao, Fengfeng; Yi, Qinghua; Cong, Shan; Wang, Yun; Song, Pingyuan; Zhai, Pengfei; Zou, Guifu; Dong, Chao

2014-01-01

SiC–Al 2 O 3 hetero-structural nanofibers have been synthesized by the chemical solution approach at 200 ° C. The diameters of nanofibers are in the range of 60–100 nm while the lengths are from tens of micrometers to hundreds of micrometers. The microstructural analysis shows that the fibers possess a like-epitaxial relationship between (104) of hexagonal Al 2 O 3 and (111) of cubic SiC. Additionally, the optical investigation of the nanofibers suggests there are some defects in the low annealing temperature synthesized SiC–Al 2 O 3 nanofibers. (paper)

Design lateral heterostructure of monolayer ZrS2 and HfS2 from first principles calculations

Science.gov (United States)

Yuan, Junhui; Yu, Niannian; Wang, Jiafu; Xue, Kan-Hao; Miao, Xiangshui

2018-04-01

The successful fabrication of two-dimensional lateral heterostructures (LHS's) has opened up unprecedented opportunities in material science and device physics. It is therefore highly desirable to search for more suitable materials to create such heterostructures for next-generation devices. Here, we investigate a novel lateral heterostructure composed of monolayer ZrS2 and HfS2 based on density functional theory. The phonon dispersion and ab initio molecular dynamics analysis indicate its good kinetic and thermodynamic stability. Remarkably, we find that these lateral heterostructures exhibit an indirect to direct bandgap transition, in contrast to the intrinsic indirect bandgap nature of ZrS2 and HfS2. The type-II alignment and chemical bonding across the interline have also been revealed. The tensile strain is proved to be an efficient way to modulate the band structure. Finally, we further discuss other three stable lateral heterostructures: (ZrSe2)2(HfSe2)2 LHS, (ZrS2)2(ZrSe2)2 LHS and (HfS2)2(HfSe2)2 LHS. Generally, the lateral heterostructures of monolayer ZrS2 and HfS2 are of excellent electrical properties, and may find potential applications for future electronic devices.

Electron transport properties of indium oxide - indium nitride metal-oxide-semiconductor heterostructures

International Nuclear Information System (INIS)

Wang, C.Y.; Hauguth, S.; Polyakov, V.; Schwierz, F.; Cimalla, V.; Kups, T.; Himmerlich, M.; Schaefer, J.A.; Krischok, S.; Ambacher, O.; Morales, F.M.; Lozano, J.G.; Gonzalez, D.; Lebedev, V.

2008-01-01

The structural, chemical and electron transport properties of In 2 O 3 /InN heterostructures and oxidized InN epilayers are reported. It is shown that the accumulation of electrons at the InN surface can be manipulated by the formation of a thin surface oxide layer. The epitaxial In 2 O 3 /InN heterojunctions show an increase in the electron concentration due to the increasing band banding at the heterointerface. The oxidation of InN results in improved transport properties and in a reduction of the sheet carrier concentration of the InN epilayer very likely caused by a passivation of surface donors. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Exotic topological insulator states and topological phase transitions in Sb2Se3-Bi2Se3 heterostructures

KAUST Repository

Zhang, Qianfan

2012-03-27

Topological insulator is a new state of matter attracting tremendous interest due to its gapless linear dispersion and spin momentum locking topological states located near the surface. Heterostructures, which have traditionally been powerful in controlling the electronic properties of semiconductor devices, are interesting for topological insulators. Here, we studied the spatial distribution of the topological state in Sb 2Se 3-Bi 2Se 3 heterostructures by first-principle simulation and discovered that an exotic topological state exists. Surprisingly, the state migrates from the nontrivial Bi 2Se 3 into the trivial Sb 2Se 3 region and spreads across the entire Sb 2Se 3 slab, extending beyond the concept of "surface" state while preserving all of the topological surface state characteristics. This unusual topological state arises from the coupling between different materials and the modification of electronic structure near Fermi energy. Our study demonstrates that heterostructures can open up opportunities for controlling the real-space distribution of the topological state and inducing quantum phase transitions between topologically trivial and nontrivial states. © 2012 American Chemical Society.

Crystal orientation effects on wurtzite quantum well electromechanical fields

DEFF Research Database (Denmark)

Duggen, Lars; Willatzen, Morten

2010-01-01

in the literature for semiconductors, is inaccurate for ZnO/MgZnO heterostructures where shear-strain components play an important role. An interesting observation is that a growth direction apart from [1̅ 21̅ 0] exists for which the electric field in the quantum well region becomes zero. This is important for, e......A one-dimensional continuum model for calculating strain and electric field in wurtzite semiconductor heterostructures with arbitrary crystal orientation is presented and applied to GaN/AlGaN and ZnO/MgZnO heterostructure combinations. The model is self-consistent involving feedback couplings...... of spontaneous polarization, strain, and electric field. Significant differences between fully coupled and semicoupled models are found for the longitudinal and shear-strain components as a function of the crystal-growth direction. In particular, we find that the semicoupled model, typically used...

Physics of low-dimensional systems

International Nuclear Information System (INIS)

Anon.

1989-01-01

The physics of low-dimensional systems has developed in a remarkable way over the last decade and has accelerated over the last few years, in particular because of the discovery of the new high temperature superconductors. The new developments started more than fifteen years ago with the discovery of the unexpected quasi-one-dimensional character of the TTF-TCNQ. Since then the field of conducting quasi-one-dimensional organic system have been rapidly growing. Parallel to the experimental work there has been an important theoretical development of great conceptual importance, such as charge density waves, soliton-like excitations, fractional charges, new symmetry properties etc. A new field of fundamental importance was the discovery of the Quantum Hall Effect in 1980. This field is still expanding with new experimental and theoretical discoveries. In 1986, then, came the totally unexpected discovery of high temperature superconductivity which started an explosive development. The three areas just mentioned formed the main themes of the Symposium. They do not in any way exhaust the progress in low-dimensional physics. We should mention the recent important development with both two-dimensional and one-dimensional and even zero-dimensional structures (quantum dots). The physics of mesoscopic systems is another important area where the low dimensionality is a key feature. Because of the small format of this Symposium we could unfortunately not cover these areas

Spin physics in semiconductors

CERN Document Server

2017-01-01

This book offers an extensive introduction to the extremely rich and intriguing field of spin-related phenomena in semiconductors. In this second edition, all chapters have been updated to include the latest experimental and theoretical research. Furthermore, it covers the entire field: bulk semiconductors, two-dimensional semiconductor structures, quantum dots, optical and electric effects, spin-related effects, electron-nuclei spin interactions, Spin Hall effect, spin torques, etc. Thanks to its self-contained style, the book is ideally suited for graduate students and researchers new to the field.

Thermal response in van der Waals heterostructures

KAUST Repository

Gandi, Appala; Alshareef, Husam N.; Schwingenschlö gl, Udo

2016-01-01

We solve numerically the Boltzmann transport equations of the phonons and electrons to understand the thermoelectric response in heterostructures of M2CO2 (M: Ti, Zr, Hf) MXenes with transition metal dichalcogenide monolayers. Low frequency optical

EDITORIAL: Non-polar and semipolar nitride semiconductors Non-polar and semipolar nitride semiconductors

Science.gov (United States)

Han, Jung; Kneissl, Michael

2012-02-01

Throughout the history of group-III-nitride materials and devices, scientific breakthroughs and technological advances have gone hand-in-hand. In the late 1980s and early 1990s, the discovery of the nucleation of smooth (0001) GaN films on c-plane sapphire and the activation of p-dopants in GaN led very quickly to the realization of high-brightness blue and green LEDs, followed by the first demonstration of GaN-based violet laser diodes in the mid 1990s. Today, blue InGaN LEDs boast record external quantum efficiencies exceeding 80% and the emission wavelength of the InGaN-based laser diode has been pushed into the green spectral range. Although these tremenduous advances have already spurred multi-billion dollar industries, there are still a number of scientific questions and technological issues that are unanswered. One key challenge is related to the polar nature of the III-nitride wurtzite crystal. Until a decade ago all research activities had almost exclusively concentrated on (0001)-oriented polar GaN layers and heterostructures. Although the device characteristics seem excellent, the strong polarization fields at GaN heterointerfaces can lead to a significant deterioration of the device performance. Triggered by the first demonstration non-polar GaN quantum wells grown on LiAlO2 by Waltereit and colleagues in 2000, impressive advances in the area of non-polar and semipolar nitride semiconductors and devices have been achieved. Today, a large variety of heterostructures free of polarization fields and exhibiting exceptional electronic and optical properties have been demonstrated, and the fundamental understanding of polar, semipolar and non-polar nitrides has made significant leaps forward. The contributions in this Semiconductor Science and Technology special issue on non-polar and semipolar nitride semiconductors provide an impressive and up-to-date cross-section of all areas of research and device physics in this field. The articles cover a wide range of

Piezoelectric control of magnetoelectric coupling driven non-volatile memory switching and self cooling effects in FE/FSMA multiferroic heterostructures

Science.gov (United States)

Singh, Kirandeep; Kaur, Davinder

2017-02-01

The manipulation of magnetic states and materials' spin degree-of-freedom via a control of an electric (E-) field has been recently pursued to develop magnetoelectric (ME) coupling-driven electronic data storage devices with high read/write endurance, fast dynamic response, and low energy dissipation. One major hurdle for this approach is to develop reliable materials which should be compatible with prevailing silicon (Si)-based complementary metal-oxide-semiconductor (CMOS) technology, simultaneously allowing small voltage for the tuning of magnetization switching. In this regard, multiferroic heterostructures where ferromagnetic (FM) and ferroelectric (FE) layers are alternatively grown on conventional Si substrates are promising as the piezoelectric control of magnetization switching is anticipated to be possible by an E-field. In this work, we study the ferromagnetic shape memory alloys based PbZr0.52Ti0.48O3/Ni50Mn35In15 (PZT/Ni-Mn-In) multiferroic heterostructures, and investigate their potential for CMOS compatible non-volatile magnetic data storage applications. We demonstrate the voltage-impulse controlled nonvolatile, reversible, and bistable magnetization switching at room temperature in Si-integrated PZT/Ni-Mn-In thin film multiferroic heterostructures. We also thoroughly unveil the various intriguing features in these materials, such as E-field tuned ME coupling and magnetocaloric effect, shape memory induced ferroelectric modulation, improved fatigue endurance as well as Refrigeration Capacity (RC). This comprehensive study suggests that these novel materials have a great potential for the development of unconventional nanoscale memory and refrigeration devices with self-cooling effect and enhanced refrigeration efficiency, thus providing a new venue for their applications.

Proximity Effect Transfer from NbTi into a Semiconductor Heterostructure via Epitaxial Aluminum

DEFF Research Database (Denmark)

Drachmann, A C C; Suominen, H J; Kjærgaard, Morten

2017-01-01

We demonstrate the transfer of the superconducting properties of NbTi, a large-gap high-critical-field superconductor, into an InAs heterostructure via a thin intermediate layer of epitaxial Al. Two device geometries, a Josephson junction and a gate-defined quantum point contact, are used...... to characterize interface transparency and the two-step proximity effect. In the Josephson junction, multiple Andreev reflections reveal near-unity transparency with an induced gap Δ* = 0.50 meV and a critical temperature of 7.8 K. Tunneling spectroscopy yields a hard induced gap in the InAs adjacent...

Molecular level control of nanoscale composition and morphology: Toward photocatalytic nanocomposites for solar-to-chemical energy conversion of biomass

Energy Technology Data Exchange (ETDEWEB)

Ruberu, Thanthrige P. [Iowa State Univ., Ames, IA (United States)

2013-01-01

Understanding the factors influencing nanocrystal formation is a challenge yet to be realized. In comparison to the large number of studies on nanocrystal synthesis and their applications, the number of studies on the effect of the precursor chemistry on nanocrystal composition and shape remains low. Although photochemical fabrication of metalsemiconductor nano-heterostructures is reported in literature, control over the free particle formation and the site of metal deposition have not been achieved. Moreover, utilization of metal- semiconductor nano-heterostructures in photocatalytic reactions other than water splitting is hardly explored. In this thesis, we studied the effect of chalcogenide precursor reactivity on the composition, morphology and the axial anisotropy of cadmiumchalcogenide nanocrystals. We also investigated the influence of the irradiation wavelength in synthesizing metal-semiconductor nano-heterostructures. Finally, we showed that metal semiconductor nano-heterostructures can be used as a photocatalyst for alcohol dehydrogenation reactions. We explored the pathways for the formation of Pt and Pd nanoparticles on CdS and CdS{sub 0.4}Se{sub 0.6} nanorods. This study revealed that the wavelength of irradiation is critical to control free-standing vs. bound metal (Pt and Pd) nanoparticles to semiconductor. Additionally, we observed that metal photodeposition occurs on specific segments of axially anisotropic, compositionally graded CdS0.4Se0.6 nanorods due to the band-gap differential between their nano-domains. We used semiconductor-metal heterostructures for sunlightdriven dehydrogenation and hydrogenolysis of benzyl alcohol. Heterostructure composition dictates activity (turnovers) and product distribution. A few metal (Pt, Pd) islands on the semiconductor surface significantly enhance activity and selectivity and also greatly stabilize the semiconductor against photoinduced etching and degradation.

Low-dimensional molecular metals

CERN Document Server

Toyota, Naoki; Muller, Jens

2007-01-01

Assimilating research in the field of low-dimensional metals, this monograph provides an overview of the status of research on quasi-one- and two-dimensional molecular metals, describing normal-state properties, magnetic field effects, superconductivity, and the phenomena of interacting p and d electrons.

Low temperature anomaly of light stimulated magnetization and heat capacity of the 1D diluted magnetic semiconductors

Science.gov (United States)

Geffe, Chernet Amente

2018-03-01

This article reports magnetization and specific heat capacity anomalies in one dimensional diluted magnetic semiconductors observed at very low temperatures. Based on quantum field theory double time temperature dependent Green function technique is employed to evaluate magnon dispersion and the time correlation function. It is understood that magnon-photon coupling and magnetic impurity concentration controls both, such that near absolute temperature magnetization is nearly zero and abruptly increase to saturation level with decreasing magnon-photon coupling strength. We also found out dropping of magnetic specific heat capacity as a result of increase in magnetic impurity concentration x, perhaps because of inter-band disorder that would suppress the enhancement of density of spin waves.

Low temperature anomaly of light stimulated magnetization and heat capacity of the 1D diluted magnetic semiconductors

Directory of Open Access Journals (Sweden)

Chernet Amente Geffe

2018-03-01

Full Text Available This article reports magnetization and specific heat capacity anomalies in one dimensional diluted magnetic semiconductors observed at very low temperatures. Based on quantum field theory double time temperature dependent Green function technique is employed to evaluate magnon dispersion and the time correlation function. It is understood that magnon-photon coupling and magnetic impurity concentration controls both, such that near absolute temperature magnetization is nearly zero and abruptly increase to saturation level with decreasing magnon-photon coupling strength. We also found out dropping of magnetic specific heat capacity as a result of increase in magnetic impurity concentration x, perhaps because of inter-band disorder that would suppress the enhancement of density of spin waves.

Electronic structures and enhanced optical properties of blue phosphorene/transition metal dichalcogenides van der Waals heterostructures

Science.gov (United States)

Peng, Qiong; Wang, Zhenyu; Sa, Baisheng; Wu, Bo; Sun, Zhimei

2016-01-01

As a fast emerging topic, van der Waals (vdW) heterostructures have been proposed to modify two-dimensional layered materials with desired properties, thus greatly extending the applications of these materials. In this work, the stacking characteristics, electronic structures, band edge alignments, charge density distributions and optical properties of blue phosphorene/transition metal dichalcogenides (BlueP/TMDs) vdW heterostructures were systematically studied based on vdW corrected density functional theory. Interestingly, the valence band maximum and conduction band minimum are located in different parts of BlueP/MoSe2, BlueP/WS2 and BlueP/WSe2 heterostructures. The MoSe2, WS2 or WSe2 layer can be used as the electron donor and the BlueP layer can be used as the electron acceptor. We further found that the optical properties under visible-light irradiation of BlueP/TMDs vdW heterostructures are significantly improved. In particular, the predicted upper limit energy conversion efficiencies of BlueP/MoS2 and BlueP/MoSe2 heterostructures reach as large as 1.16% and 0.98%, respectively, suggesting their potential applications in efficient thin-film solar cells and optoelectronic devices. PMID:27553787

Electronic structures and enhanced optical properties of blue phosphorene/transition metal dichalcogenides van der Waals heterostructures.

Science.gov (United States)

Peng, Qiong; Wang, Zhenyu; Sa, Baisheng; Wu, Bo; Sun, Zhimei

2016-08-24

As a fast emerging topic, van der Waals (vdW) heterostructures have been proposed to modify two-dimensional layered materials with desired properties, thus greatly extending the applications of these materials. In this work, the stacking characteristics, electronic structures, band edge alignments, charge density distributions and optical properties of blue phosphorene/transition metal dichalcogenides (BlueP/TMDs) vdW heterostructures were systematically studied based on vdW corrected density functional theory. Interestingly, the valence band maximum and conduction band minimum are located in different parts of BlueP/MoSe2, BlueP/WS2 and BlueP/WSe2 heterostructures. The MoSe2, WS2 or WSe2 layer can be used as the electron donor and the BlueP layer can be used as the electron acceptor. We further found that the optical properties under visible-light irradiation of BlueP/TMDs vdW heterostructures are significantly improved. In particular, the predicted upper limit energy conversion efficiencies of BlueP/MoS2 and BlueP/MoSe2 heterostructures reach as large as 1.16% and 0.98%, respectively, suggesting their potential applications in efficient thin-film solar cells and optoelectronic devices.

Quantum transport in semiconductor nanostructures

Energy Technology Data Exchange (ETDEWEB)

Kubis, Tillmann Christoph

2009-11-15

several controversially discussed questions on the nature of transport in this type of nanodevices. In contrast to previous approximate approaches, we show that the nature of transport in QCLs is sensitive to the applied bias voltage and can be tuned from the coherent to the incoherent regime. We point out that the elastic scattering at rough interfaces is among the most efficient incoherent scattering mechanisms in THz-QCLs and significantly influences the laser performance. Up to now, this has been utterly underestimated in approximate studies of THz-QCLs with direct optical transitions. All current theoretical models apply periodic (or field-periodic) boundary conditions on the transport in QCLs. Our revision of the open boundary conditions allows us to consider the QCL as an open quantum devices, instead. In this way, we illustrate that charge distributions in QCLs can develop periodicities that are only commensurable or even incommensurable with the QCL periodicity. This effect leads to efficient non-radiative transitions between the laser levels and is - due to the common periodic boundary conditions - completely missed in literature. We also propose several novel THz-QCLs with larger optical gain, lower thermal load and a higher resistivity against growth imperfections. The third part of this thesis is dedicated to the spin transport in two-dimensional semicon- ductor heterostructures. It is common to apply an approximate envelope function model (EFT) for the spin-orbit interaction in such devices, in spite of the well-known fact that EFT calculations typically incorrectly predict the spin-splitting in semiconductor heterostructures. For this reason, we represent the NEGF method in the EFT model as well as in a microscopic atomistic tight binding model. In the later model, the spin-orbit interaction is treated nonperturbatively going far beyond the approximate EFT model. We show that the numerically efficient EFT model yields results that qualitatively agree with

Strain-engineered growth of two-dimensional materials.

Science.gov (United States)

Ahn, Geun Ho; Amani, Matin; Rasool, Haider; Lien, Der-Hsien; Mastandrea, James P; Ager Iii, Joel W; Dubey, Madan; Chrzan, Daryl C; Minor, Andrew M; Javey, Ali

2017-09-20

The application of strain to semiconductors allows for controlled modification of their band structure. This principle is employed for the manufacturing of devices ranging from high-performance transistors to solid-state lasers. Traditionally, strain is typically achieved via growth on lattice-mismatched substrates. For two-dimensional (2D) semiconductors, this is not feasible as they typically do not interact epitaxially with the substrate. Here, we demonstrate controlled strain engineering of 2D semiconductors during synthesis by utilizing the thermal coefficient of expansion mismatch between the substrate and semiconductor. Using WSe 2 as a model system, we demonstrate stable built-in strains ranging from 1% tensile to 0.2% compressive on substrates with different thermal coefficient of expansion. Consequently, we observe a dramatic modulation of the band structure, manifested by a strain-driven indirect-to-direct bandgap transition and brightening of the dark exciton in bilayer and monolayer WSe 2 , respectively. The growth method developed here should enable flexibility in design of more sophisticated devices based on 2D materials.Strain engineering is an essential tool for modifying local electronic properties in silicon-based electronics. Here, Ahn et al. demonstrate control of biaxial strain in two-dimensional materials based on the growth substrate, enabling more complex low-dimensional electronics.

Terahertz Radiation Heterodyne Detector Using Two-Dimensional Electron Gas in a GaN Heterostructure

Science.gov (United States)

Karasik, Boris S.; Gill, John J.; Mehdi, Imran; Crawford, Timothy J.; Sergeev, Andrei V.; Mitin, Vladimir V.

2012-01-01

High-resolution submillimeter/terahertz spectroscopy is important for studying atmospheric and interstellar molecular gaseous species. It typically uses heterodyne receivers where an unknown (weak) signal is mixed with a strong signal from the local oscillator (LO) operating at a slightly different frequency. The non-linear mixer devices for this frequency range are unique and are not off-the-shelf commercial products. Three types of THz mixers are commonly used: Schottky diode, superconducting hot-electron bolometer (HEB), and superconductor-insulation-superconductor (SIS) junction. A HEB mixer based on the two-dimensional electron gas (2DEG) formed at the interface of two slightly dissimilar semiconductors was developed. This mixer can operate at temperatures between 100 and 300 K, and thus can be used with just passive radiative cooling available even on small spacecraft.

Dirac Cones, Topological Edge States, and Nontrivial Flat Bands in Two-Dimensional Semiconductors with a Honeycomb Nanogeometry

Directory of Open Access Journals (Sweden)

E. Kalesaki

2014-01-01

Full Text Available We study theoretically two-dimensional single-crystalline sheets of semiconductors that form a honeycomb lattice with a period below 10 nm. These systems could combine the usual semiconductor properties with Dirac bands. Using atomistic tight-binding calculations, we show that both the atomic lattice and the overall geometry influence the band structure, revealing materials with unusual electronic properties. In rocksalt Pb chalcogenides, the expected Dirac-type features are clouded by a complex band structure. However, in the case of zinc-blende Cd-chalcogenide semiconductors, the honeycomb nanogeometry leads to rich band structures, including, in the conduction band, Dirac cones at two distinct energies and nontrivial flat bands and, in the valence band, topological edge states. These edge states are present in several electronic gaps opened in the valence band by the spin-orbit coupling and the quantum confinement in the honeycomb geometry. The lowest Dirac conduction band has S-orbital character and is equivalent to the π-π^{⋆} band of graphene but with renormalized couplings. The conduction bands higher in energy have no counterpart in graphene; they combine a Dirac cone and flat bands because of their P-orbital character. We show that the width of the Dirac bands varies between tens and hundreds of meV. These systems emerge as remarkable platforms for studying complex electronic phases starting from conventional semiconductors. Recent advancements in colloidal chemistry indicate that these materials can be synthesized from semiconductor nanocrystals.

Interfacial engineering of two-dimensional nano-structured materials by atomic layer deposition

Energy Technology Data Exchange (ETDEWEB)

Zhuiykov, Serge, E-mail: serge.zhuiykov@ugent.be [Ghent University Global Campus, Department of Applied Analytical & Physical Chemistry, Faculty of Bioscience Engineering, 119 Songdomunhwa-ro, Yeonsu-Gu, Incheon 406-840 (Korea, Republic of); Kawaguchi, Toshikazu [Global Station for Food, Land and Water Resources, Global Institution for Collaborative Research and Education, Hokkaido University, N10W5 Kita-ku, Sapporo, Hokkaido 060-0810 (Japan); Graduate School of Environmental Science, Hokkaido University, N10W5 Kita-ku, Sapporo, Hokkaido 060-0810 (Japan); Hai, Zhenyin; Karbalaei Akbari, Mohammad; Heynderickx, Philippe M. [Ghent University Global Campus, Department of Applied Analytical & Physical Chemistry, Faculty of Bioscience Engineering, 119 Songdomunhwa-ro, Yeonsu-Gu, Incheon 406-840 (Korea, Republic of)

2017-01-15

Highlights: • Advantages of atomic layer deposition technology (ALD) for two-dimensional nano-crystals. • Conformation of ALD technique and chemistry of precursors. • ALD of semiconductor oxide thin films. • Ultra-thin (∼1.47 nm thick) ALD-developed tungsten oxide nano-crystals on large area. - Abstract: Atomic Layer Deposition (ALD) is an enabling technology which provides coating and material features with significant advantages compared to other existing techniques for depositing precise nanometer-thin two-dimensional (2D) nanostructures. It is a cyclic process which relies on sequential self-terminating reactions between gas phase precursor molecules and a solid surface. ALD is especially advantageous when the film quality or thickness is critical, offering ultra-high aspect ratios. ALD provides digital thickness control to the atomic level by depositing film one atomic layer at a time, as well as pinhole-free films even over a very large and complex areas. Digital control extends to sandwiches, hetero-structures, nano-laminates, metal oxides, graded index layers and doping, and it is perfect for conformal coating and challenging 2D electrodes for various functional devices. The technique’s capabilities are presented on the example of ALD-developed ultra-thin 2D tungsten oxide (WO{sub 3}) over the large area of standard 4” Si substrates. The discussed advantages of ALD enable and endorse the employment of this technique for the development of hetero-nanostructure 2D semiconductors with unique properties.

Ion channeling study of defects in multicomponent semiconductor compounds

International Nuclear Information System (INIS)

Turos, A.; Nowicki, L.; Stonert, A.

2002-01-01

Compound semiconductor crystals are of great technological importance as basic materials for production of modern opto- and microelectronic devices. Ion implantation is one of the principal techniques for heterostructures processing. This paper reports the results of the study of defect formation and transformation in binary and ternary semiconductor compounds subjected to ion implantation with ions of different mass and energy. The principal analytical technique was He-ion channeling. The following materials were studied: GaN and InGaN epitaxial layers. First the semi empirical method of channeling spectra analysis for ion implanted multicomponent single crystal was developed. This method was later complemented by the more sophisticated method based on the Monte Carlo simulation of channeling spectra. Next, the damage buildup in different crystals and epitaxial layers as a function of the implantation dose was studied for N, Mg, Te, and Kr ions. The influence of the substrate temperature on the defect transformations was studied for GaN epitaxial layers implanted with Mg ions. Special attention was devoted to the study of growth conditions of InGaN/GaN/sapphire heterostructures, which are important component of the future blue laser diodes. In-atom segregation and tetragonal distortion of the epitaxial layer were observed and characterized. Next problem studied was the incorporation of hydrogen atoms in GaAs and GaN. Elastic recoil detection (ERDA) and nuclear reaction analysis (NRA) were applied for the purpose. (author)

Lithium adsorption and migration in group IV-VI compounds and GeS/graphene heterostructures: a comparative study.

Science.gov (United States)

Hao, Kuan-Rong; Fang, Lincan; Yan, Qing-Bo; Su, Gang

2018-04-18

By means of first-principles calculations, the adsorption and transport properties of lithium (Li) in orthorhombic group IV-VI compounds MX (M = Ge, Sn; X = S, Se) and GeS/graphene heterostructures have been systematically investigated. Strong interactions and distinct charge transfer between Li and compounds MX are observed. The Li diffusion barriers along the zigzag direction are found to be much lower than that along the armchair direction in monolayer and bulk MX, showing distinct anisotropic diffusion features. In particular, monolayer GeS has a lowest barrier of 0.173 eV (zigzag) among them and it will transit from a semiconductor to a metallic state after Li intercalation, indicating fast Li and electron transport properties. As a comparison, the addition of graphene in a GeS/graphene heterostructure could enhance its binding with Li, decrease the Li diffusion barrier and inhibit the volume expansion dramatically, suggesting a potential performance improvement. Our study not only reveals the directional transport properties of Li in MX, but also improves the understanding of the role of graphene in the MX/graphene heterostructure, and shows great potential application in the field of electrode materials.

Temperature Dependence of the Energy Band Diagram of AlGaN/GaN Heterostructure

Directory of Open Access Journals (Sweden)

Yanli Liu

2018-01-01

Full Text Available Temperature dependence of the energy band diagram of AlGaN/GaN heterostructure was investigated by theoretical calculation and experiment. Through solving Schrodinger and Poisson equations self-consistently by using the Silvaco Atlas software, the energy band diagram with varying temperature was calculated. The results indicate that the conduction band offset of AlGaN/GaN heterostructure decreases with increasing temperature in the range of 7 K to 200 K, which means that the depth of quantum well at AlGaN/GaN interface becomes shallower and the confinement of that on two-dimensional electron gas reduces. The theoretical calculation results are verified by the investigation of temperature dependent photoluminescence of AlGaN/GaN heterostructure. This work provides important theoretical and experimental basis for the performance degradation of AlGaN/GaN HEMT with increasing temperature.

DARPA-URI Consortium Meetings on Submicron Heterostructures of Diluted Magnetic Semiconductors.

Science.gov (United States)

1987-01-01

Acta Physica Polonica (to be published). 89. B.E. Larson, K.C. Hass, H. Ehrenreich and A.E. Carlsson, "Theory of Exchange Interactions and Chemical...Rodriguez, "Parity Violation and Electron-Spin Resonance of Donors in Semiconductors" (to appear in Physica ). 45. Z. Barticevic, M. Dobrowolska, J.K. Furdyna

Synthesis and their enhanced photoelectrochemical performance of ZnO nanoparticle-loaded CuO dandelion heterostructures under solar light

Energy Technology Data Exchange (ETDEWEB)

Dong, Guanying; Du, Bin; Liu, Lei; Zhang, Weiwei; Liang, Yujie; Shi, Honglong; Wang, Wenzhong, E-mail: wzhwangmuc@163.com

2017-03-31

Highlights: • ZnO/CuO nanoparticle/dandelion heterostructures were fabricated for the first time. • ZnO/CuO nanoparticle/dandelion heterostructures show enhanced PEC activity. • ZnO nanoparticle loading contents have significant effect on PEC water splitting. • Interaction, charge transfer and enhanced mechanism of photocatalyst were proposed. • p-n junction drives the photoexcited charges efficient separation. - Abstract: Here we report an easy and large-scale synthesis of three-dimensional (3D) ZnO nanoparticle-loaded CuO dandelion (denoted as n-ZnO/p-CuO nanoparticle/dandelion) heterostructures and their photoelectrochemical (PEC) water splitting under simulated solar light illumination. CuO dandelions were fabricated by a facile and cost-effective chemical strategy, in which the ribbon-like CuO nanoplates were first formed and then assembled into dandelion-like architectures. ZnO nanoparticle-loaded CuO dandelion heterostructures were fabricated by calcining Zn(Ac){sub 2}-loaded CuO dandelions. High resolution transmission electron microscope (HRTEM) studies demonstrate that intimate p-n junction is built between p-CuO and n-ZnO interface. The n-ZnO/p-CuO nanoparticle/dandelion photoelectrodes exhibit significant improvement in PEC water splitting to CuO dandelion photoelectrodes. The correlation between photocurrents and different loading contents of ZnO nanoparticles (NPs) is studied in which the n-ZnO/p-CuO nanoparticle/dandelion heterostructures with loading 4.6 wt% ZnO NPs show higher photocathodic current. The efficient separation of the photogenerated electrons and holes driven by the intimate p-n junction between p-type CuO and n-type ZnO interface is mainly contributed to the enhanced photoanode current. The achieved results in the present study offer a very useful strategy for designing p-n junction photoelectrodes for efficiency and low-cost PEC cells for clean solar hydrogen production.

Semiconductor detectors in the low countries

International Nuclear Information System (INIS)

Heijne, Erik H.M.

2003-01-01

Several milestones in the development of semiconductor radiation imaging detectors are attributed to scientists from the Low Countries, the Netherlands and Belgium, and a few historical details will be highlighted. The very first usable semiconductor nuclear detector was made in Utrecht, around 1943, in the form of an AgCl crystal. The earliest large-scale application of monolithic, double-sided silicon strip detectors was in the BOL experiment around 1968 at IKO, now NIKHEF, in Amsterdam. The technology developed and patented by Philips and IKO was adapted by the author and coworkers in 1980 to produce the first silicon microstrip detector used for the reconstruction of events in a CERN fixed target experiment. An avalanche of developments then led to worldwide use of silicon microstrip detectors in elementary particle physics, motivated by the capability to reconstruct particles with lifetime ∼10 -12 s, which decay on sub-millimeter scale. The intensive activity in silicon detector R and D culminated in 1991 in the construction of fine-grained 2D monolithic and hybrid pixel detectors that incorporate sophisticated electronic functions in each microscopic detection element, with typical dimensions of 25-100 μm. Besides being a powerful high intensity tracker for particle physics, this device can also be designed as a new X-ray imager, which allows selective counting of individual photons in each pixel at MHz frequency

Graphene-Nanodiamond Heterostructures and their application to High Current Devices

Science.gov (United States)

Zhao, Fang; Vrajitoarea, Andrei; Jiang, Qi; Han, Xiaoyu; Chaudhary, Aysha; Welch, Joseph O.; Jackman, Richard B.

2015-01-01

Graphene on hydrogen terminated monolayer nanodiamond heterostructures provides a new way to improve carrier transport characteristics of the graphene, offering up to 60% improvement when compared with similar graphene on SiO2/Si substrates. These heterostructures offers excellent current-carrying abilities whilst offering the prospect of a fast, low cost and easy methodology for device applications. The use of ND monolayers is also a compatible technology for the support of large area graphene films. The nature of the C-H bonds between graphene and H-terminated NDs strongly influences the electronic character of the heterostructure, creating effective charge redistribution within the system. Field effect transistors (FETs) have been fabricated based on this novel herterostructure to demonstrate device characteristics and the potential of this approach. PMID:26350107

Strain engineering in monolayer WS2, MoS2, and the WS2/MoS2 heterostructure

KAUST Repository

He, Xin; Li, Hai; Zhu, Zhiyong; Dai, Zhenyu; Yang, Yang; Yang, Peng; Zhang, Qiang; Li, Peng; Schwingenschlö gl, Udo; Zhang, Xixiang

2016-01-01

Mechanically exfoliated monolayers of WS2, MoS2 and their van der Waals heterostructure were fabricated on flexible substrate so that uniaxial tensile strain can be applied to the two-dimensional samples. The modification of the band structure under strain was investigated by micro-photoluminescence spectroscopy at room temperature as well as by first-principles calculations. Exciton and trion emissions were observed in both WS2 and the heterostructure at room temperature, and were redshifted by strain, indicating potential for applications in flexible electronics and optoelectronics.

Strain engineering in monolayer WS2, MoS2, and the WS2/MoS2 heterostructure

KAUST Repository

He, Xin

2016-10-27