Rheology and stability kinetics of bare silicon nanoparticle inks for low-cost direct printing

Energy Technology Data Exchange (ETDEWEB)

More, Priyesh V.; Jeong, Sunho; Seo, Yeong-Hui; Ryu, Beyong-Hwan; Choi, Youngmin [Advanced Materials Division, Korea Research Institute of Chemical Technology 141 Gajeong-ro, Yuseong-gu, Daejeon 305-600 (Korea, Republic of); Kim, Seong Jip [Advanced Materials Division, Korea Research Institute of Chemical Technology 141 Gajeong-ro, Yuseong-gu, Daejeon 305-600 Korea and Department of Materials Science and Engineering, Korea University 5-1 Anam-Dong, Seongbuk-gu, Seoul 136-701 (Korea, Republic of); Nahm, Sahn [Department of Materials Science and Engineering, Korea University 5-1 Anam-Dong, Seongbuk-gu, Seoul 136-701 (Korea, Republic of)

2013-12-16

Highly dispersed and stable silicon nanoparticles ink is formulated for its application in direct printing or printable electronics. These dispersions are prepared from free-standing silicon nanoparticles which are not capped with any organic ligand, making it suitable for electronic applications. Silicon nanoparticles dispersions are prepared by suspending the nanoparticles in benzonitrile or ethanol by using polypropylene glycol (PPG) as a binder. All the samples show typical shear thinning behavior while the dispersion samples show low viscosities signifying good quality dispersion. Such thinning behavior favors in fabrication of dense films with spin-coating or patterns with drop casting. The dispersion stability is monitored by turbiscan measurements showing good stability for one week. A low-cost direct printing method for dispersion samples is also demonstrated to obtain micro-sized patterns. Low electrical resistivity of resulting patterns, adjustable viscosity and good stability makes these silicon nanoparticles dispersions highly applicable for direct printing process.

Clathrates and beyond: Low-density allotropy in crystalline silicon

Energy Technology Data Exchange (ETDEWEB)

Beekman, Matt [Department of Physics, California Polytechnic State University, San Luis Obispo, California 93407 (United States); Wei, Kaya; Nolas, George S., E-mail: gnolas@usf.edu [Department of Physics, University of South Florida, Tampa, Florida 33620 (United States)

2016-12-15

In its common, thermodynamically stable state, silicon adopts the same crystal structure as diamond. Although only a few alternative allotropic structures have been discovered and studied over the past six decades, advanced methods for structure prediction have recently suggested a remarkably rich low-density phase space that has only begun to be explored. The electronic properties of these low-density allotropes of silicon, predicted by first-principles calculations, indicate that these materials could offer a pathway to improving performance and reducing cost in a variety of electronic and energy-related applications. In this focus review, we provide an introduction and overview of recent theoretical and experimental results related to low-density allotropes of silicon, highlighting the significant potential these materials may have for technological applications, provided substantial challenges to their experimental preparation can be overcome.

Glow discharge-deposited amorphous silicon films for low-cost solar cells

Energy Technology Data Exchange (ETDEWEB)

Grabmaier, J G; Plaettner, R D; Stetter, W [Siemens A.G., Muenchen (Germany, F.R.). Forschungslaboratorien

1980-01-01

Due to their high absorption constant, glow discharge-deposited amorphous silicon (a-Si) films are of great interest for low-cost solar cells. Using SiH/sub 4/ and SiX/sub 4//H/sub 2/ (X = Cl or F) gas mixtures in an inductively or capacitively excited reactor, a-Si films with thicknesses up to several micrometers were deposited on substrates of glass, silica and silicon. The optical and electrical properties of the films were determined by measuring the IR absorption spectra, dark conductivity, photoconductivity, and photoluminescence. Hydrogen, chlorine, or fluorine were incorporated in the films in order to passivate dangling bonds in the amorphous network.

Development of processes for the production of low cost silicon dendritic web for solar cells

Science.gov (United States)

Duncan, C. S.; Seidensticker, R. G.; Mchugh, J. P.; Hopkins, R. H.; Skutch, M. E.; Driggers, J. M.; Hill, F. E.

1980-01-01

High area output rates and continuous, automated growth are two key technical requirements for the growth of low-cost silicon ribbons for solar cells. By means of computer-aided furnace design, silicon dendritic web output rates as high as 27 sq cm/min have been achieved, a value in excess of that projected to meet a $0.50 per peak watt solar array manufacturing cost. The feasibility of simultaneous web growth while the melt is replenished with pelletized silicon has also been demonstrated. This step is an important precursor to the development of an automated growth system. Solar cells made on the replenished material were just as efficient as devices fabricated on typical webs grown without replenishment. Moreover, web cells made on a less-refined, pelletized polycrystalline silicon synthesized by the Battelle process yielded efficiencies up to 13% (AM1).

Low Cost Solar Array Project. Feasibility of the silane process for producing semiconductor-grade silicon. Final report, October 1975-March 1979

Energy Technology Data Exchange (ETDEWEB)

1979-06-01

The commercial production of low-cost semiconductor-grade silicon is an essential requirement of the JPL/DOE (Department of Energy) Low-Cost Solar Array (LSA) Project. A 1000-metric-ton-per-year commercial facility using the Union Carbide Silane Process will produce molten silicon for an estimated price of $7.56/kg (1975 dollars, private financing), meeting the DOE goal of less than $10/kg. Conclusions and technology status are reported for both contract phases, which had the following objectives: (1) establish the feasibility of Union Carbide's Silane Process for commercial application, and (2) develop an integrated process design for an Experimental Process System Development Unit (EPSDU) and a commercial facility, and estimate the corresponding commercial plant economic performance. To assemble the facility design, the following work was performed: (a) collection of Union Carbide's applicable background technology; (b) design, assembly, and operation of a small integrated silane-producing Process Development Unit (PDU); (c) analysis, testing, and comparison of two high-temperature methods for converting pure silane to silicon metal; and (d) determination of chemical reaction equilibria and kinetics, and vapor-liquid equilibria for chlorosilanes.

Development of low cost silicon solar cells by reusing the silicon saw dust collected during wafering process

International Nuclear Information System (INIS)

Zaidi, Z.I.; Raza, B.; Ahmed, M.; Sheikh, H.; Qazi, I.A.

2002-01-01

Silicon material due to its abundance in nature and maximum conversion efficiency has been successfully being used for the fabrication of electronic and photovoltaic devices such as ICs, diodes, transistors and solar cells. The 80% of the semiconductor industry is ruled by silicon material. Single crystal silicon solar cells are in use for both space and terrestrial application, due to the well developed technology and better efficiency than polycrystalline and amorphous silicon solar cells. The current research work is an attempt to reduce the cost of single crystal silicon solar cells by reusing the silicon saw dust obtained during the watering process. During the watering process about 45% Si material is wasted in the form of Si powder dust. Various waste powder silicon samples were analyzed using inductively Coupled Plasma (ICP) technique, for metallic impurities critical for solar grade silicon material. The results were evaluated from impurity and cost point of view. (author)

Wurtzite-Phased InP Micropillars Grown on Silicon with Low Surface Recombination Velocity.

Science.gov (United States)

Li, Kun; Ng, Kar Wei; Tran, Thai-Truong D; Sun, Hao; Lu, Fanglu; Chang-Hasnain, Connie J

2015-11-11

The direct growth of III-V nanostructures on silicon has shown great promise in the integration of optoelectronics with silicon-based technologies. Our previous work showed that scaling up nanostructures to microsize while maintaining high quality heterogeneous integration opens a pathway toward a complete photonic integrated circuit and high-efficiency cost-effective solar cells. In this paper, we present a thorough material study of novel metastable InP micropillars monolithically grown on silicon, focusing on two enabling aspects of this technology-the stress relaxation mechanism at the heterogeneous interface and the microstructure surface quality. Aberration-corrected transmission electron microscopy studies show that InP grows directly on silicon without any amorphous layer in between. A set of periodic dislocations was found at the heterointerface, relaxing the 8% lattice mismatch between InP and Si. Single crystalline InP therefore can grow on top of the fully relaxed template, yielding high-quality micropillars with diameters expanding beyond 1 μm. An interesting power-dependence trend of carrier recombination lifetimes was captured for these InP micropillars at room temperature, for the first time for micro/nanostructures. By simply combining internal quantum efficiency with carrier lifetime, we revealed the recombination dynamics of nonradiative and radiative portions separately. A very low surface recombination velocity of 1.1 × 10(3) cm/sec was obtained. In addition, we experimentally estimated the radiative recombination B coefficient of 2.0 × 10(-10) cm(3)/sec for pure wurtzite-phased InP. These values are comparable with those obtained from InP bulk. Exceeding the limits of conventional nanowires, our InP micropillars combine the strengths of both nanostructures and bulk materials and will provide an avenue in heterogeneous integration of III-V semiconductor materials onto silicon platforms.

Evanescent field phase shifting in a silicon nitride waveguide using a coupled silicon slab

DEFF Research Database (Denmark)

Jensen, Asger Sellerup; Oxenløwe, Leif Katsuo; Green, William M. J.

2015-01-01

An approach for electrical modulation of low-loss silicon nitride waveguides is proposed, using a silicon nitride waveguide evanescently loaded with a thin silicon slab. The thermooptic phase-shift characteristics are investigated in a racetrack resonator configuration....

Evaluation of selected chemical processes for production of low-cost silicon

Science.gov (United States)

Blocher, J. M., Jr.; Browning, M. F.; Wilson, W. J.; Carmichael, D. C.

1976-01-01

Plant construction costs and manufacturing costs were estimated for the production of solar-grade silicon by the reduction of silicon tetrachloride in a fluidized bed of seed particles, and several modifications of the iodide process using either thermal decomposition on heated filaments (rods) or hydrogen reduction in a fluidized bed of seed particles. Energy consumption data for the zinc reduction process and each of the iodide process options are given and all appear to be acceptable from the standpoint of energy pay back. Information is presented on the experimental zinc reduction of SiCl4 and electrolytic recovery of zinc from ZnCl2. All of the experimental work performed thus far has supported the initial assumption as to technical feasibility of producing semiconductor silicon by the zinc reduction or iodide processes proposed. The results of a more thorough thermodynamic evaluation of the iodination of silicon oxide/carbon mixtures are presented which explain apparent inconsistencies in an earlier cursory examination of the system.

Single-Phase Hybrid Switched Reluctance Motor for Low-Power Low-Cost Applications

DEFF Research Database (Denmark)

Lu, Kaiyuan; Rasmussen, Peter Omand; Jakobsen, Uffe

2011-01-01

This paper presents a new single-phase, Hybrid Switched Reluctance (HSR) motor for low-cost, low-power, pump or fan drive systems. Its single-phase configuration allows use of a simple converter to reduce the system cost. Cheap ferrite magnets are used and arranged in a special flux concentration...... manner to increase effectively the torque density and efficiency of this machine. The efficiency of this machine is comparable to the efficiency of a traditional permanent magnet machine in the similar power range. The cogging torque, due to the existence of the permanent magnetic field, is beneficially...

Random sized plasmonic nanoantennas on Silicon for low-cost broad-band near-infrared photodetection

Science.gov (United States)

Nazirzadeh, Mohammad Amin; Atar, Fatih Bilge; Turgut, Berk Berkan; Okyay, Ali Kemal

2014-01-01

In this work, we propose Silicon based broad-band near infrared Schottky barrier photodetectors. The devices operate beyond 1200 nm wavelength and exhibit photoresponsivity values as high as 3.5 mA/W with a low dark current density of about 50 pA/µm2. We make use of Au nanoislands on Silicon surface formed by rapid thermal annealing of a thin Au layer. Surface plasmons are excited on Au nanoislands and this field localization results in efficient absorption of sub-bandgap photons. Absorbed photons excite the electrons of the metal to higher energy levels (hot electron generation) and the collection of these hot electrons to the semiconductor results in photocurrent (internal photoemission). Simple and scalable fabrication makes these devices suitable for ultra-low-cost NIR detection applications. PMID:25407509

A low-cost, ultra-fast and ultra-low noise preamplifier for silicon avalanche photodiodes

Science.gov (United States)

Gasmi, Khaled

2018-02-01

An ultra-fast and ultra-low noise preamplifier for amplifying the fast and weak electrical signals generated by silicon avalanche photodiodes has been designed and developed. It is characterized by its simplicity, compactness, reliability and low cost of construction. A very wide bandwidth of 300 MHz, a very good linearity from 1 kHz to 280 MHz, an ultra-low noise level at the input of only 1.7 nV Hz-1/2 and a very good stability are its key features. The compact size (70 mm  ×  90 mm) and light weight (45 g), as well as its excellent characteristics, make this preamplifier very competitive compared to any commercial preamplifier. The preamplifier, which is a main part of the detection system of a homemade laser remote sensing system, has been successfully tested. In addition, it is versatile and can be used in any optical detection system requiring high speed and very low noise electronics.

Pathway to low-cost metallization of silicon solar cell through understanding of the silicon metal interface and plating chemistry

International Nuclear Information System (INIS)

Ebong, Abasifreke

2014-01-01

Metallization is crucial to silicon solar cell performance. It is the second most expensive process step in the fabrication of a solar cell. In order to reduce the cost of solar cell, the metallization cost has to be cut down by using less metal without compromising the efficiency. Screen-printing has been used in metallizing the commercial solar cell because of the high throughput and low cost at the expense of performance. However, because of the variability in the screen-printed gridlines, the amount of Ag metal used cannot be controlled. More so, the dependence of the contact resistance on doping necessitates the use of low sheet resistance emitters, which exacerbates losses in the blue response and hence the efficiency. To balance the contact resistance and improve blue response, several approaches have been undertaken including, use of Ag pastes incorporating nanoparticle glass frits that will not diffuse excessively into a lightly doped emitter, Ni plating on lightly doped emitter through SiNx dielectric plus NiSi formation followed by Cu and/or Ag plating, light induced plating (LIP) of Ag or Cu on fired through dielectric metal seed layers formed by aerosol or inkjet or screen-printing. All these approaches require excellent adhesion and gridline conductivity to minimize the total series resistance, which impedes the collection of electrons. This paper presents the issues and the pathway to achieving high efficiency using low cost metallization technology involving inkjet-printed Ag fine gridline having 38 μm width and 3 μm height fired through the SiNx followed by Ni and Cu plating. A comprehensive analysis of silicon/metal interface, using high precision microscopy, has shown that the investigated metallization technology is appropriate for the longevity of the device

Towards solar grade silicon: Challenges and benefits for low cost photovoltaics

Energy Technology Data Exchange (ETDEWEB)

Pizzini, Sergio [Ned Silicon Spa, Via Th. Edison 6, 60027 Osimo (Ancona) (Italy)

2010-09-15

It is well known that silicon in its various structural configurations (single crystal, multicrystalline, amorphous, micro-nanocrystalline) supplies almost 90% of the substrates used in the photovoltaic industry. It is also known, since years, that the photovoltaic (PV) industry shows a marked growth trend, which demanded and demands a continuous, huge increase of the bulk silicon supply in the order of 30%/yr. In order to fulfill their today- and future needs, many companies worldwide took the decision to start the installation of many thousand tons/year plants, most of them using the Siemens process, some of them using the MG route, to produce the so called solar grade (SG) silicon. The advantages of the Siemens process are well known, as it provides ultrapure silicon, directly usable for growing either single crystalline Czochralski ingots or multicrystalline ingots using the directional solidification (DS) technique. The disadvantages are its high energetic cost (a minimum of 120 kWH/kg) and the possible losses of chlorinated gases in the atmosphere, with possible severe environmental problems. The advantages of the MG route are still potential, as there is no commercially available production of solar silicon as yet, and rely on its reduced energetic costs (a maximum of 25-30 kWh/kg) for a feedstock directly usable for growing multicrystalline ingots using the DS technique. The drawbacks of silicon of MG origin are its larger concentration of metallic impurities, as compared with the Siemens one, the higher B and P content, and the potentially high carbon content. The aim of this paper is to deal with some of the problems encountered so far with the silicon of MG origin with respect to the metallic and non-metallic impurities content, as well as to propose technologically feasible solar grade feedstock specifications. (author)

Low cost silicon solar array project: Feasibility of low-cost, high-volume production of silane and pyrolysis of silane to semiconductor-grade silicon

Science.gov (United States)

Breneman, W. C.

1978-01-01

Silicon epitaxy analysis of silane produced in the Process Development Unit operating in a completely integrated mode consuming only hydrogen and metallurgical silicon resulted in film resistivities of up to 120 ohms cm N type. Preliminary kinetic studies of dichlorosilane disproportionation in the liquid phase have shown that 11.59% SiH4 is formed at equilibrium after 12 minutes contact time at 56 C. The fluid-bed reactor was operated continuously for 48 hours with a mixture of one percent silane in helium as the fluidizing gas. A high silane pyrolysis efficiency was obtained without the generation of excessive fines. Gas flow conditions near the base of the reactor were unfavorable for maintaining a bubbling bed with good heat transfer characteristics. Consequently, a porous agglomerate formed in the lower portion of the reactor. Dense coherent plating was obtained on the silicon seed particles which had remained fluidizied throughout the experiment.

Low-cost high purity production

Science.gov (United States)

Kapur, V. K.

1978-01-01

Economical process produces high-purity silicon crystals suitable for use in solar cells. Reaction is strongly exothermic and can be initiated at relatively low temperature, making it potentially suitable for development into low-cost commercial process. Important advantages include exothermic character and comparatively low process temperatures. These could lead to significant savings in equipment and energy costs.

Cost-effectiveness of silicone and alginate impressions for complete dentures.

Science.gov (United States)

Hulme, C; Yu, G; Browne, C; O'Dwyer, J; Craddock, H; Brown, S; Gray, J; Pavitt, S; Fernandez, C; Godfrey, M; Dukanovic, G; Brunton, P; Hyde, T P

2014-08-01

The aim of this study was to assess the cost effectiveness of silicone and alginate impressions for complete dentures. Cost effectiveness analyses were undertaken alongside a UK single centre, double blind, controlled, crossover clinical trial. Taking the perspective of the healthcare sector, effectiveness is measured using the EuroQol (EQ-5D-3L) which provides a single index value for health status that may be combined with time to produce quality adjusted life years (QALYs); and Oral Health Impact Profile (OHIP-EDENT). Incremental cost effectiveness ratios are presented representing the additional cost per one unit gained. Mean cost was higher in the silicone impression group (£388.57 vs. £363.18). Negligible between-group differences were observed in QALY gains; the silicone group had greater mean OHIP-EDENT gains. The additional cost using silicone was £3.41 per change of one point in the OHIP-EDENT. The silicone group was more costly, driven by the cost of materials. Changes in the EQ-5D and QALY gains over time and between arms were not statistically significant. Change in OHIP-EDENT score showed greater improvement in the silicone group and the difference between arms was statistically significant. Given negligible QALY gains and low level of resource use, results must be treated with caution. It is difficult to make robust claims about the comparative cost-effectiveness. Silicone impressions for complete dentures improve patients' quality of life (OHIP-EDENT score). The extra cost of silicone impressions is £30 per patient. Dentists, patients and health care funders need to consider the clinical and financial value of silicone impressions. Different patients, different dentists, different health funders will have individual perceptions and judgements. ISRCTN01528038. NIHR-RfPB grant PB-PG-0408-16300. This article forms part of a project for which the author (TPH) won the Senior Clinical Unilever Hatton Award of the International Assocation for Dental

Thin film silicon modules: contributions to low cost industrial production

Energy Technology Data Exchange (ETDEWEB)

Shah, A. [Universite de Neuchatel, Neuchatel (Switzerland)

2005-07-01

This final report for the Swiss Federal Office of Energy (SFOE) discusses the research work done during the two-year period 2003-04 at the Thin-Film Solar Cell Laboratory of the Institute of Microtechnology (IMT) at the University of Neuchatel in Switzerland. The transition from fundamental research work to concrete industrialisation issues, and changes within the research staff are discussed. The main results of the work done are presented, including basic techniques for the production of p-i-n solar cells on glass, new technologies for the deposition of n-i-p cells on low-cost flexible substrates and the optimisation of zinc oxide deposition methods. The key role played by substrate chemistry and roughness in the nucleation and growth of micro-crystalline silicon layers is looked at and diagnostic tools for the analysis of micro-crystalline solar cells are discussed.

Low cost monocrystalline silicon sheet fabrication for solar cells by advanced ingot technology

Science.gov (United States)

Fiegl, G. F.; Bonora, A. C.

1980-01-01

The continuous liquid feed (CLF) Czochralski furnace and the enhanced I.D. slicing technology for the low-cost production of monocrystalline silicon sheets for solar cells are discussed. The incorporation of the CLF system is shown to improve ingot production rate significantly. As demonstrated in actual runs, higher than average solidification rates (75 to 100 mm/hr for 150 mm 1-0-0 crystals) can be achieved, when the system approaches steady-state conditions. The design characteristics of the CLF furnace are detailed, noting that it is capable of precise control of dopant impurity incorporation in the axial direction of the crystal. The crystal add-on cost is computed to be $11.88/sq m, considering a projected 1986 25-slice per cm conversion factor with an 86% crystal growth yield.

Sequential purification and crystal growth for the production of low cost silicon substrates. Quarterly technical progress report No. 1, 15 September 1979-31 December 1979

Energy Technology Data Exchange (ETDEWEB)

Liaw, M.; Secco, F.; Ingle, B.; Down, D.

1980-02-01

Over the past several years, Motorola's Materials Technology Laboratory (MTL), has been conducting several projects with goals directed at the production of high quality low cost silicon crystals. One of the projects which is being investigated is the direct purification of MG-Si. A unique characteristic of the approach used by this project is the use of a crystal puller to perform both purification and crystal growth. Sequential steps of purification were taken. By the completion of this series of purification, the purified MG-Si melt will be further purified by impurity redistribution using ingot pulling. The final purified silicon will be in an ingot form of desired dimensions for slicing into silicon sheets. The sequential steps of purification include: (1) leaching of MG-Si charge, (2) phase separation, (3) reactive gas treatment, (4) liquid-liquid extraction (called Slagging), and (5) purification by redistribution of impurities using ingot pulling. Progress on items (1) and (2) is reported. (WHK)

Array automated assembly task low cost silicon solar array project. Phase 2. Final report

Energy Technology Data Exchange (ETDEWEB)

Olson, Clayton

1980-12-01

The initial contract was a Phase II Process Development for a process sequence, but with concentration on two particular process steps: laserscribing and spray-on junction formation. The add-on portion of the contract was to further develop these tasks, to incorporate spray-on of AR Coating and aluminum and to study the application of microwave energy to solar cell fabrication. The overall process cost projection is 97.918 cents/Wp. The major contributor to this excess cost is the module encapsulation materials cost. During the span of this contract the study of microwave application to solar cell fabrication produced the ability to apply this technique to any requirement of 600/sup 0/C or less. Above this temperature, non-uniformity caused the processing to be unreliable. The process sequence is described in detail, and a SAMICS cost analysis for each valid process step studied is presented. A temporary catalog for expense items is included, and engineering specifications for the process steps are given. (WHK)

Low-cost multicrystalline back-contact silicon solar cells with screen printed metallization

International Nuclear Information System (INIS)

Neu, W.; Kress, A.; Jooss, W.; Fath, P.; Bucher, E.

2002-01-01

Adaptation to market requirements is a permanent challenge in industrial solar-cell production. Both increase of cell efficiency as well as lowering costs is demanded. Back-contacted solar cells offer multiple advantages in terms of reducing module assembling costs and enhanced cell efficiency. The investigated emitter-wrap-through (EWT) design [1] has a collecting emitter on front and rear side. These emitter areas are electrically connected by small holes. Due to the double-sided collecting junction, this cell design is favourable for materials with a low-minority charge carrier diffusion length leading to a higher short circuit current density. Until now most investigations on EWT solar cells were performed on Cz or even FZ silicon. This was justified as long as different processing techniques had to be developed and compared. But as an industrially applicable process sequence has recently been developed [2], the advantages of the EWT concept compared to conventionally processed cells have to be shown on multicrystalline material. In the following, a manufacturing process of EWT solar cells is presented which is especially adapted to the requirements of multicrystalline silicon. Effective surface texturization was reached by mechanical V-texturization and bulk passivation by a hydrogen plasma treatment. The efficiency of the best solar cells within this process reached 14.2% which is the highest efficiency reported so far for mc-Si 10x10 cm 2 EWT solar cells [3]. (author)

A low cost and hybrid technology for integrating silicon sensors or actuators in polymer microfluidic systems

International Nuclear Information System (INIS)

Charlot, Samuel; Gué, Anne-Marie; Tasselli, Josiane; Marty, Antoine; Abgrall, Patrick; Estève, Daniel

2008-01-01

This paper describes a new technology permitting a hybrid integration of silicon chips in polymer (PDMS and SU8) microfluidic structures. This two-step technology starts with transferring the silicon device onto a rigid substrate (typically PCB) and planarizing it, and then it proceeds with stacking of the polymer-made fluidic network onto the device. The technology is low cost, based on screen printing and lamination, can be applied to treat large surface areas, and is compatible with standard photolithography and vacuum based approaches. We show, as an example, the integration of a thermal sensor inside channels made of PDMS or SU8. The developed structures had no fluid leaks at the Si/polymer interfaces and the electrical circuit was perfectly tightproof. (note)

A low cost rapid prototype platform for a three phase PFC rectifier application

DEFF Research Database (Denmark)

Haase, Frerk; Kouchaki, Alireza; Nymand, Morten

2015-01-01

In this paper the design and development of a low cost rapid prototype platform for a Three Phase PFC rectifier application is presented. The active rectifier consists of a SiC-MOSFET based PWM converter and a low cost rapid prototype platform for simulating and implementing the digital control...

Silicon materials task of the Low Cost Solar Array Project: Effect of impurities and processing on silicon solar cells

Science.gov (United States)

Hopkins, R. H.; Davis, J. R.; Rohatgi, A.; Hanes, M. H.; Rai-Choudhury, P.; Mollenkopf, H. C.

1982-01-01

The effects of impurities and processing on the characteristics of silicon and terrestrial silicon solar cells were defined in order to develop cost benefit relationships for the use of cheaper, less pure solar grades of silicon. The amount of concentrations of commonly encountered impurities that can be tolerated in typical p or n base solar cells was established, then a preliminary analytical model from which the cell performance could be projected depending on the kinds and amounts of contaminants in the silicon base material was developed. The impurity data base was expanded to include construction materials, and the impurity performace model was refined to account for additional effects such as base resistivity, grain boundary interactions, thermal processing, synergic behavior, and nonuniform impurity distributions. A preliminary assessment of long term (aging) behavior of impurities was also undertaken.

Transformational silicon electronics

KAUST Repository

Rojas, Jhonathan Prieto

2014-02-25

In today\\'s traditional electronics such as in computers or in mobile phones, billions of high-performance, ultra-low-power devices are neatly integrated in extremely compact areas on rigid and brittle but low-cost bulk monocrystalline silicon (100) wafers. Ninety percent of global electronics are made up of silicon. Therefore, we have developed a generic low-cost regenerative batch fabrication process to transform such wafers full of devices into thin (5 μm), mechanically flexible, optically semitransparent silicon fabric with devices, then recycling the remaining wafer to generate multiple silicon fabric with chips and devices, ensuring low-cost and optimal utilization of the whole substrate. We show monocrystalline, amorphous, and polycrystalline silicon and silicon dioxide fabric, all from low-cost bulk silicon (100) wafers with the semiconductor industry\\'s most advanced high-κ/metal gate stack based high-performance, ultra-low-power capacitors, field effect transistors, energy harvesters, and storage to emphasize the effectiveness and versatility of this process to transform traditional electronics into flexible and semitransparent ones for multipurpose applications. © 2014 American Chemical Society.

Investigation of Low-Cost Surface Processing Techniques for Large-Size Multicrystalline Silicon Solar Cells

Directory of Open Access Journals (Sweden)

Yuang-Tung Cheng

2010-01-01

Full Text Available The subject of the present work is to develop a simple and effective method of enhancing conversion efficiency in large-size solar cells using multicrystalline silicon (mc-Si wafer. In this work, industrial-type mc-Si solar cells with area of 125×125 mm2 were acid etched to produce simultaneously POCl3 emitters and silicon nitride deposition by plasma-enhanced chemical vapor deposited (PECVD. The study of surface morphology and reflectivity of different mc-Si etched surfaces has also been discussed in this research. Using our optimal acid etching solution ratio, we are able to fabricate mc-Si solar cells of 16.34% conversion efficiency with double layers silicon nitride (Si3N4 coating. From our experiment, we find that depositing double layers silicon nitride coating on mc-Si solar cells can get the optimal performance parameters. Open circuit (Voc is 616 mV, short circuit current (Jsc is 34.1 mA/cm2, and minority carrier diffusion length is 474.16 μm. The isotropic texturing and silicon nitride layers coating approach contribute to lowering cost and achieving high efficiency in mass production.

Silicon Ingot Casting - Heat Exchanger Method (HEM). Multi-Wire Slicing - Fixed Abrasive Slicing Technique (Fast). Phase 4 Silicon Sheet Growth Development for the Large Area Sheet Task of the Low-Cost Solar Array Project

Science.gov (United States)

Schmid, F.

1981-01-01

The crystallinity of large HEM silicon ingots as a function of heat flow conditions is investigated. A balanced heat flow at the bottom of the ingot restricts spurious nucleation to the edge of the melted-back seed in contact with the crucible. Homogeneous resistivity distribution over all the ingot has been achieved. The positioning of diamonds electroplated on wirepacks used to slice silicon crystals is considered. The electroplating of diamonds on only the cutting edge is described and the improved slicing performance of these wires evaluated. An economic analysis of value added costs of HEM ingot casting and band saw sectioning indicates the projected add on cost of HEM is well below the 1986 allocation.

Low cost silicon solar array project large area silicon sheet task: Silicon web process development

Science.gov (United States)

Duncan, C. S.; Seidensticker, R. G.; Mchugh, J. P.; Blais, P. D.; Davis, J. R., Jr.

1977-01-01

Growth configurations were developed which produced crystals having low residual stress levels. The properties of a 106 mm diameter round crucible were evaluated and it was found that this design had greatly enhanced temperature fluctuations arising from convection in the melt. Thermal modeling efforts were directed to developing finite element models of the 106 mm round crucible and an elongated susceptor/crucible configuration. Also, the thermal model for the heat loss modes from the dendritic web was examined for guidance in reducing the thermal stress in the web. An economic analysis was prepared to evaluate the silicon web process in relation to price goals.

Sliver Solar Cells: High-Efficiency, Low-Cost PV Technology

Directory of Open Access Journals (Sweden)

Evan Franklin

2007-01-01

Full Text Available Sliver cells are thin, single-crystal silicon solar cells fabricated using standard fabrication technology. Sliver modules, composed of several thousand individual Sliver cells, can be efficient, low-cost, bifacial, transparent, flexible, shadow tolerant, and lightweight. Compared with current PV technology, mature Sliver technology will need 10% of the pure silicon and fewer than 5% of the wafer starts per MW of factory output. This paper deals with two distinct challenges related to Sliver cell and Sliver module production: providing a mature and robust Sliver cell fabrication method which produces a high yield of highly efficient Sliver cells, and which is suitable for transfer to industry; and, handling, electrically interconnecting, and encapsulating billions of sliver cells at low cost. Sliver cells with efficiencies of 20% have been fabricated at ANU using a reliable, optimised processing sequence, while low-cost encapsulation methods have been demonstrated using a submodule technique.

Low-cost production of solar-cell panels

Science.gov (United States)

Bickler, D. B.; Gallagher, B. D.; Sanchez, L. E.

1980-01-01

Large-scale production model combines most modern manufacturing techniques to produce silicon-solar-cell panels of low costs by 1982. Model proposes facility capable of operating around the clock with annual production capacity of 20 W of solar cell panels.

Electrical activation of solid-phase epitaxially regrown ultra-low energy boron implants in Ge preamorphised silicon and SOI

International Nuclear Information System (INIS)

Hamilton, J.J.; Collart, E.J.H.; Colombeau, B.; Jeynes, C.; Bersani, M.; Giubertoni, D.; Sharp, J.A.; Cowern, N.E.B.; Kirkby, K.J.

2005-01-01

The formation of highly activated ultra-shallow junctions (USJ) is one of the key requirements for the next generation of CMOS devices. One promising method for achieving this is the use of Ge preamorphising implants (PAI) prior to ultra-low energy B implantation. In future technology nodes, bulk silicon wafers may be supplanted by Silicon-on-Insulator (SOI), and an understanding of the Solid Phase Epitaxial (SPE) regrowth process and its correlation to dopant electrical activation in both bulk silicon and SOI is essential in order to understand the impact of this potential technology change. This kind of understanding will also enable tests of fundamental models for defect evolution and point-defect reactions at silicon/oxide interfaces. In the present work, B is implanted into Ge PAI silicon and SOI wafers with different PAI conditions and B doses, and resulting samples are annealed at various temperatures and times. Glancing-exit Rutherford Backscattering Spectrometry (RBS) is used to monitor the regrowth of the amorphous silicon, and the resulting redistribution and electrical activity of B are monitored by SIMS and Hall measurements. The results confirm the expected enhancement of regrowth velocity by B doping, and show that this velocity is otherwise independent of the substrate type and the Ge implant distribution within the amorphised layer. Hall measurements on isochronally annealed samples show that B deactivates less in SOI material than in bulk silicon, in cases where the Ge PAI end-of-range defects are close to the SOI back interface

The synthesis of a high quality, low cost silicon nitride powder by the carbothermal reduction of silica

International Nuclear Information System (INIS)

Cochran, G.A.; Conner, C.L.; Eisman, G.A.; Weimer, A.W.; Carroll, D.F.; Dunmead, S.D.; Hwang, C.J.

1994-01-01

The development and emergence of silicon nitride in the marketplace depends on the availability of a high quality, low cost powder which meets or exceeds the requirements for the customer's part application. The Dow Chemical Company, funded by the United States Department of Energy Oak Ridge National Laboratory, is engaged in developing a process which will economically synthesize commercial quantities of such a high quality powder. The Dow Chemical Company's approach is based on the carbothermal reduction of silica and has been shown to produce a sub-micron, equi-axed powder with high alpha content (> 95%), low oxygen (< 2%), and minimal carbon and impurities. This paper will review The Dow Chemical Company program and present preliminary results of the synthesis and powder processing efforts. (orig.)

Statistical characteristics of L1 carrier phase observations from four low-cost GPS receivers

DEFF Research Database (Denmark)

Cederholm, Jens Peter

2010-01-01

Statistical properties of L1 carrier phase observations from four low-cost GPS receivers are investigated through a case study. The observations are collected on a zero baseline with a frequency of 1 Hz and processed with a double difference model. The carrier phase residuals from an ambiguity...

A high volume cost efficient production macrostructuring process. [for silicon solar cell surface treatment

Science.gov (United States)

Chitre, S. R.

1978-01-01

The paper presents an experimentally developed surface macro-structuring process suitable for high volume production of silicon solar cells. The process lends itself easily to automation for high throughput to meet low-cost solar array goals. The tetrahedron structure observed is 0.5 - 12 micron high. The surface has minimal pitting with virtually no or very few undeveloped areas across the surface. This process has been developed for (100) oriented as cut silicon. Chemi-etched, hydrophobic and lapped surfaces were successfully texturized. A cost analysis as per Samics is presented.

Efficient Phase Locking of Fiber Amplifiers Using a Low-Cost and High-Damage-Threshold Phase Control System

International Nuclear Information System (INIS)

Pu, Zhou; Yan-Xing, Ma; Xiao-Lin, Wang; Hao-Tong, Ma; Xiao-Jun, Xu; Ze-Jin, Liu

2010-01-01

We propose a low-cost and high-damage-threshold phase control system that employs a piezoelectric ceramic transducer modulator controlled by a stochastic parallel gradient descent algorithm. Efficient phase locking of two fiber amplifiers is demonstrated. Experimental results show that energy encircled in the target pinhole is increased by a factor of 1.76 and the visibility of the fringe pattern is as high as 90% when the system is in close-loop. The phase control system has potential in phase locking of large-number and high-power fiber laser endeavors. (fundamental areas of phenomenology (including applications))

Silicon photonic integrated circuit swept-source optical coherence tomography receiver with dual polarization, dual balanced, in-phase and quadrature detection.

Science.gov (United States)

Wang, Zhao; Lee, Hsiang-Chieh; Vermeulen, Diedrik; Chen, Long; Nielsen, Torben; Park, Seo Yeon; Ghaemi, Allan; Swanson, Eric; Doerr, Chris; Fujimoto, James

2015-07-01

Optical coherence tomography (OCT) is a widely used three-dimensional (3D) optical imaging method with many biomedical and non-medical applications. Miniaturization, cost reduction, and increased functionality of OCT systems will be critical for future emerging clinical applications. We present a silicon photonic integrated circuit swept-source OCT (SS-OCT) coherent receiver with dual polarization, dual balanced, in-phase and quadrature (IQ) detection. We demonstrate multiple functional capabilities of IQ polarization resolved detection including: complex-conjugate suppressed full-range OCT, polarization diversity detection, and polarization-sensitive OCT. To our knowledge, this is the first demonstration of a silicon photonic integrated receiver for OCT. The integrated coherent receiver provides a miniaturized, low-cost solution for SS-OCT, and is also a key step towards a fully integrated high speed SS-OCT system with good performance and multi-functional capabilities. With further performance improvement and cost reduction, photonic integrated technology promises to greatly increase penetration of OCT systems in existing applications and enable new applications.

The impact of silicon feedstock on the PV module cost

NARCIS (Netherlands)

del Coso, G.; del Cañizo, C.; Sinke, W.C.

2010-01-01

The impact of the use of new (solar grade) silicon feedstock materials on the manufacturing cost of wafer-based crystalline silicon photovoltaic modules is analyzed considering effects of material cost, efficiency of utilisation, and quality. Calculations based on data provided by European industry

A cost roadmap for silicon heterojunction solar cells

NARCIS (Netherlands)

Louwen, A.; van Sark, W.; Schropp, R.E.I.; Faaij, A.

2016-01-01

Research and development of silicon heterojunction (SHJ) solar cells has seen a marked increase since the recent expiry of core patents describing SHJ technology. SHJ solar cells are expected to offer various cost benefits compared to conventional crystalline silicon solar cells. This paper analyses

A Cost Roadmap for Silicon Heterojunction Solar Cells

NARCIS (Netherlands)

Louwen, A.; van Sark, W.G.J.H.M.; Schropp, Ruud; Faaij, A.

Research and development of silicon heterojunction (SHJ) solar cells has seen a marked increase since the recent expiry of core patents describing SHJ technology. SHJ solar cells are expected to offer various cost benefits compared to conventional crystalline silicon solar cells. This paper analyses

Development in fiscal 1999 of technologies to put photovoltaic power generation systems into practical use. Development of thin film solar cell manufacturing technologies (Development of low-cost large-area module manufacturing technologies, and development of technologies to manufacture amorphous silicon/thin film poly-crystalline silicon hybrid thin film solar cells); 1999 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu (tei cost daimenseki module seizo kaihatsu (oyogata shinkozo usumaku taiyo denchi no seizo gijutsu kaihatsu (amorphous silicon / usumaku takessho silicon hybrid usumaku taiyo denchi no seizo gijutsu kaihatsu))

Energy Technology Data Exchange (ETDEWEB)

NONE

2000-03-01

Developmental research has been performed on large-area low-cost manufacturing technologies on hybrid thin film solar cells of amorphous silicon and poly-crystalline silicon. This paper summarizes the achievements in fiscal 1999. The research has been performed on a texture construction formed naturally on silicon surface, and thin film poly-crystalline silicon cells with STAR structure having a rear side reflection layer to increase light absorption. The research achievements during the current fiscal year may be summarized as follows: the laser scribing technology for thin film poly-crystalline silicon was established, which is important for modularization, making fabrication of low-cost and large-area modules possible; a stabilization efficiency of 11.3% was achieved in a hybrid mini module comprising of ten-stage series integrated amorphous silicon and thin film poly-crystalline silicon; structures different hybrid modules were discussed, whereas an initial efficiency of 10.3% (38.78W) was achieved in a sub-module having a substrate size of 910 mm times 455 mm; and feasibility of forming large-area hybrid modules was demonstrated. (NEDO)

Resonator-Based Silicon Electro-Optic Modulator with Low Power Consumption

Science.gov (United States)

Xin, Maoqing; Danner, Aaron J.; Eng Png, Ching; Thor Lim, Soon

2009-04-01

This paper demonstrates, via simulation, an electro-optic modulator based on a subwavelength Fabry-Perot resonator cavity with low power consumption of 86 µW/µm. This is, to the best of our knowledge, the lowest power reported for silicon photonic bandgap modulators. The device is modulated at a doped p-i-n junction overlapping the cavity in a silicon waveguide perforated with etched holes, with the doping area optimized for minimum power consumption. The surface area of the entire device is only 2.1 µm2, which compares favorably to other silicon-based modulators. A modulation speed of at least 300 MHz is detected from the electrical simulator after sidewall doping is introduced which is suitable for sensing or fiber to the home (FTTH) technologies, where speed can be traded for low cost and power consumption. The device does not rely on ultra-high Q, and could serve as a sensor, modulator, or passive filter with built-in calibration.

Low cost sic coated erosion resistant graphite

International Nuclear Information System (INIS)

Zafar, M.F.; Nicholls, J.R.

2007-01-01

The development of materials with unique and improved properties using low cost processes is essential to increase performance and reduce cost of the solid rocket motors. Specifically advancements are needed for boost phase nozzle. As these motors operate at very high pressure and temperatures, the nozzle must survive high thermal stresses with minimal erosion to maintain performance. Currently three material choices are being exploited; which are refractory metals, graphite and carbon-carbon composites. Of these three materials graphite is the most attractive choice because of its low cost, light weight, and easy forming. However graphite is prone to erosion, both chemical and mechanical, which may affect the ballistic conditions and mechanical properties of the nozzle. To minimize this erosion high density graphite is usually preferred; which is again very expensive. Another technique used to minimize the erosion is Pyrolytic Graphite (PG) coating inside the nozzle. However PG coating is prone to cracking and spallation along with very cumbersome deposition process. Another possible methodology to avoid this erosion is to convert the inside surface of the rocket nozzle to Silicon Carbide (SiC), which is very erosion resistant and have much better thermal stability compared to graphite and even PG. Due to its functionally gradient nature such a layer will be very adherent and resistant to spallation. The current research is focused on synthesizing, characterizing and oxidation testing of such a converted SiC layer on commercial grade graphite. (author)

Low Cost/Low Noise Variable Pitch Ducted Fan, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — ACI proposes a design for a Propulsor (Low Cost/Low Noise Variable Pitch Ducted Fan) that has wide application in all sectors of Aviation. Propulsor hardware of this...

Low-cost automated system for phase-shifting and phase retrieval based on the tunability of a laser diode

Science.gov (United States)

Rivera-Ortega, Uriel; Dirckx, Joris

2016-09-01

A low-cost and fully automated process for phase-shifting interferometry by continuously changing and turning on-off the input voltage of a laser diode under the scheme of an unbalanced Twyman-Green interferometer setup is presented. The input signal of a laser diode is controlled by a Data Acquisition (NI-DAQ) device which permits to change its wavelength according to its tunability features. The automation and data analysis will be done using LabVIEW in combination with MATLAB. By using Carré algorithm the phase map is obtained. Measurements of visibility and phase-shift to verify the PSI requirements are also shown.

Low-cost encapsulation materials for terrestrial solar cell modules

Science.gov (United States)

Cuddihy, E. F.; Baum, B.; Willis, P.

1979-01-01

The paper presents the findings of material surveys intended to identify low cost materials which could be functional as encapsulants (by 1986) for terrestrial solar cell modules. Economic analyses have indicated that in order to meet the low cost goal of $2.70 per sq m, some or all of the following material technologies must be developed or advanced: (1) UV screening outer covers; (2) elastomeric acrylics; (3) weatherproofing and waterproofing of structural wood and paper products; (4) transparent UV stabilizers for the UV-sensitive transparent pottants; and (5) cost-effective utilization of silicone and fluorocarbon materials.

Experimental analysis of a low cost phase change material emulsion for its use as thermal storage system

International Nuclear Information System (INIS)

Delgado, Mónica; Lázaro, Ana; Mazo, Javier; Peñalosa, Conchita; Dolado, Pablo; Zalba, Belén

2015-01-01

Highlights: • A low cost PCM emulsion has been analyzed as thermal energy storage system. • Its thermophysical and rheological properties have been determined. • The system shows advantages in terms of energy density and heat transfer rate. • The PCM emulsion system has been compared to other thermal energy storage systems. - Abstract: A 46 l commercial tank with a helical coil heat exchanger and containing a low cost phase change material emulsion has been experimentally analyzed as a thermal energy storage system in terms of volumetric energy density and heat transfer rate, for its subsequent comparison with other thermal energy storage systems. This phase change material emulsion shows a phase change temperature range between 30 and 50 °C, its solids content is about 60% with an average particle size of 1 μm. The low cost phase change material emulsion shows a thermal storage capacity by mass 50% higher than water and an increase in viscosity up to 2–5 orders of magnitude. The results have shown that the global heat transfer coefficient of the phase change material emulsion tank is around 2–6 times higher than for conventional latent systems previously analyzed in literature, although 5 times lower than if it contains water. The phase change material emulsion tank presents an energy density 34% higher than the water tank, which makes it a promising solution. Measures to improve its performance are also studied in this work.

High Efficiency, Low Cost Solar Cells Manufactured Using 'Silicon Ink' on Thin Crystalline Silicon Wafers

Energy Technology Data Exchange (ETDEWEB)

Antoniadis, H.

2011-03-01

Reported are the development and demonstration of a 17% efficient 25mm x 25mm crystalline Silicon solar cell and a 16% efficient 125mm x 125mm crystalline Silicon solar cell, both produced by Ink-jet printing Silicon Ink on a thin crystalline Silicon wafer. To achieve these objectives, processing approaches were developed to print the Silicon Ink in a predetermined pattern to form a high efficiency selective emitter, remove the solvents in the Silicon Ink and fuse the deposited particle Silicon films. Additionally, standard solar cell manufacturing equipment with slightly modified processes were used to complete the fabrication of the Silicon Ink high efficiency solar cells. Also reported are the development and demonstration of a 18.5% efficient 125mm x 125mm monocrystalline Silicon cell, and a 17% efficient 125mm x 125mm multicrystalline Silicon cell, by utilizing high throughput Ink-jet and screen printing technologies. To achieve these objectives, Innovalight developed new high throughput processing tools to print and fuse both p and n type particle Silicon Inks in a predetermined pat-tern applied either on the front or the back of the cell. Additionally, a customized Ink-jet and screen printing systems, coupled with customized substrate handling solution, customized printing algorithms, and a customized ink drying process, in combination with a purchased turn-key line, were used to complete the high efficiency solar cells. This development work delivered a process capable of high volume producing 18.5% efficient crystalline Silicon solar cells and enabled the Innovalight to commercialize its technology by the summer of 2010.

Flexible Thermoelectric Generators on Silicon Fabric

KAUST Repository

Sevilla, Galo T.

2012-11-01

In this work, the development of a Thermoelectric Generator on Flexible Silicon Fabric is explored to extend silicon electronics for flexible platforms. Low cost, easily deployable plastic based flexible electronics are of great interest for smart textile, wearable electronics and many other exciting applications. However, low thermal budget processing and fundamentally limited electron mobility hinders its potential to be competitive with well established and highly developed silicon technology. The use of silicon in flexible electronics involve expensive and abrasive materials and processes. In this work, high performance flexible thermoelectric energy harvesters are demonstrated from low cost bulk silicon (100) wafers. The fabrication of the micro- harvesters was done using existing silicon processes on silicon (100) and then peeled them off from the original substrate leaving it for reuse. Peeled off silicon has 3.6% thickness of bulk silicon reducing the thermal loss significantly and generating nearly 30% more output power than unpeeled harvesters. The demonstrated generic batch processing shows a pragmatic way of peeling off a whole silicon circuitry after conventional fabrication on bulk silicon wafers for extremely deformable high performance integrated electronics. In summary, by using a novel, low cost process, this work has successfully integrated existing and highly developed fabrication techniques to introduce a flexible energy harvester for sustainable applications.

Characteristics of exciton photoluminescence kinetics in low-dimensional silicon structures

CERN Document Server

Sachenko, A V; Manojlov, E G; Svechnikov, S V

2001-01-01

The time-resolved visible photoluminescence of porous nanocrystalline silicon films obtained by laser ablation have been measured within the temperature range 90-300 K. A study has been made of the interrelationship between photoluminescence characteristics (intensity, emission spectra, relaxation times, their temperature dependencies and structural and dielectric properties (size and shapes of Si nanocrystals, oxide phase of nanocrystal coating, porosity). A photoluminescence model is proposed that describes photon absorption and emission occurring in quantum-size Si nanocrystals while coupled subsystems of electron-hole pairs and excitons take part in the recombination. Possible excitonic Auger recombination mechanism in low-dimensional silicon structures is considered

Achievement Report for fiscal 1997 on developing a silicon manufacturing process with reduced energy consumption. Development of silicon mass-production manufacturing technology for solar cells; 1997 nendo energy shiyo gorika silicon seizo process kaihatsu. Taiyo denchiyo silicon ryosanka seizo gijutsu no kaihatsu

Energy Technology Data Exchange (ETDEWEB)

NONE

1998-03-01

In order to manufacture silicon for solar cells, development is intended on a technology to manufacture silicon (SOG-Si) for solar cells by means of metallurgical methods using metallic silicon with purity generally available as an interim starting material. The silicon is required of p-type electric conductivity characteristics with specific resistance of 0.5 to 1.5 ohm per cm, to be sufficient even with 6-7N as compared to silicon for semiconductors (11-N), and to be low in cost. While the NEDO fluid bed process and the metallurgical NEDO direct reduction process have been developed based on the technology to manufacture silicon for semiconductors, the basic policy was established to develop a new manufacturing method using commercially available high-purity metallic silicon as an interim starting material, with an objective to achieve cost as low as capable of responding to small-quantity phase production for proliferation purpose. Removal of boron and phosphor has been the main issue in the development, whereas SOG-Si was manufactured in a laboratory scale by combining with the conventional component technologies in fiscal 1991 and 1992. The scale was expanded to 20 kg since fiscal 1993, and a five year plan starting fiscal 1996 was decided to develop the technology for industrial scale. Fiscal 1997 has promoted the development by using the 20-kg scale device, and introduced facilities to develop technology for mass-production scale. (NEDO)

Detecting single-electron events in TEM using low-cost electronics and a silicon strip sensor.

Science.gov (United States)

Gontard, Lionel C; Moldovan, Grigore; Carmona-Galán, Ricardo; Lin, Chao; Kirkland, Angus I

2014-04-01

There is great interest in developing novel position-sensitive direct detectors for transmission electron microscopy (TEM) that do not rely in the conversion of electrons into photons. Direct imaging improves contrast and efficiency and allows the operation of the microscope at lower energies and at lower doses without loss in resolution, which is especially important for studying soft materials and biological samples. We investigate the feasibility of employing a silicon strip detector as an imaging detector for TEM. This device, routinely used in high-energy particle physics, can detect small variations in electric current associated with the impact of a single charged particle. The main advantages of using this type of sensor for direct imaging in TEM are its intrinsic radiation hardness and large detection area. Here, we detail design, simulation, fabrication and tests in a TEM of the front-end electronics developed using low-cost discrete components and discuss the limitations and applications of this technology for TEM.

Using machine-learning to optimize phase contrast in a low-cost cellphone microscope

Science.gov (United States)

Wartmann, Rolf; Schadwinkel, Harald; Heintzmann, Rainer

2018-01-01

Cellphones equipped with high-quality cameras and powerful CPUs as well as GPUs are widespread. This opens new prospects to use such existing computational and imaging resources to perform medical diagnosis in developing countries at a very low cost. Many relevant samples, like biological cells or waterborn parasites, are almost fully transparent. As they do not exhibit absorption, but alter the light’s phase only, they are almost invisible in brightfield microscopy. Expensive equipment and procedures for microscopic contrasting or sample staining often are not available. Dedicated illumination approaches, tailored to the sample under investigation help to boost the contrast. This is achieved by a programmable illumination source, which also allows to measure the phase gradient using the differential phase contrast (DPC) [1, 2] or even the quantitative phase using the derived qDPC approach [3]. By applying machine-learning techniques, such as a convolutional neural network (CNN), it is possible to learn a relationship between samples to be examined and its optimal light source shapes, in order to increase e.g. phase contrast, from a given dataset to enable real-time applications. For the experimental setup, we developed a 3D-printed smartphone microscope for less than 100 $ using off-the-shelf components only such as a low-cost video projector. The fully automated system assures true Koehler illumination with an LCD as the condenser aperture and a reversed smartphone lens as the microscope objective. We show that the effect of a varied light source shape, using the pre-trained CNN, does not only improve the phase contrast, but also the impression of an improvement in optical resolution without adding any special optics, as demonstrated by measurements. PMID:29494620

Simulation and experimental study of a novel bifacial structure of silicon heterojunction solar cell for high efficiency and low cost

Science.gov (United States)

Huang, Haibin; Tian, Gangyu; Zhou, Lang; Yuan, Jiren; Fahrner, Wolfgang R.; Zhang, Wenbin; Li, Xingbing; Chen, Wenhao; Liu, Renzhong

2018-03-01

A novel structure of Ag grid/SiN x /n+-c-Si/n-c-Si/i-a-Si:H/p+-a-Si:H/TCO/Ag grid was designed to increase the efficiency of bifacial amorphous/crystalline silicon-based solar cells and reduce the rear material consumption and production cost. The simulation results show that the new structure obtains higher efficiency compared with the typical bifacial amorphous/crystalline silicon-based solar cell because of an increase in the short-circuit current (J sc), while retaining the advantages of a high open-circuit voltage, low temperature coefficient, and good weak-light performance. Moreover, real cells composed of the novel structure with dimensions of 75 mm ×75 mm were fabricated by a special fabrication recipe based on industrial processes. Without parameter optimization, the cell efficiency reached 21.1% with the J sc of 41.7 mA/cm2. In addition, the novel structure attained 28.55% potential conversion efficiency under an illumination of AM 1.5 G, 100 mW/cm2. We conclude that the configuration of the Ag grid/SiN x /n+-c-Si/n-c-Si/i-a-Si:H/p+-a-Si:H/TCO/Ag grid is a promising structure for high efficiency and low cost. Project supported by the Jiangxi Provincial Key Research and Development Foundation, China (Grant No. 2016BBH80043), the Open Fund of Jiangsu Key Laboratory of Materials and Technology for Energy Conversion, China (Grant No. NJ20160032), and the National Natural Science Foundation of China (Grant Nos. 61741404, 61464007, and 51561022).

Phase-sensitive optical processing in silicon waveguides

DEFF Research Database (Denmark)

Petermann, Klaus; Gajda, A.; Dziallas, Claudia

2015-01-01

Parametric optical signal processing is reviewed for silicon nano-rib-waveguides with a reverse-biased pin-junction. Phase-sensitive parametric amplification with a phase-sensitive extinction of more than 20 dB has been utilized for the regeneration of DPSK signals...

Novel approaches for low-cost through-silicon vias

NARCIS (Netherlands)

Bullema, J.E.; Bressers, P.; Oosterhuis, G.; Mueller, M.; Huis in 't veld, A.J.; Roozeboom, F.

2011-01-01

3D stacking of integrated circuits is an emerging packaging technology to enable a high degree of functional integration and miniaturization. Footprint reduction in 3D stacking can be achieved by use of Through Silicon Vias (TSV). Creation of TSVs with Deep Reactive Ion Etching (DRIE), laser

Low-Cost Bio-Based Phase Change Materials as an Energy Storage Medium in Building Envelopes

Energy Technology Data Exchange (ETDEWEB)

Biswas, Kaushik [ORNL; Abhari, Mr. Ramin [Renewable Energy Group, Inc.; Shukla, Dr. Nitin [Fraunhofer USA, Center for Sustainable Energy Systems (CSE), Boston; Kosny, Dr. Jan [Fraunhofer USA, Center for Sustainable Energy Systems (CSE), Boston

2015-01-01

A promising approach to increasing the energy efficiency of buildings is the implementation of phase change material (PCM) in building envelope systems. Several studies have reported the energy saving potential of PCM in building envelopes. However, wide application of PCMs in building applications has been inhibited, in part, by their high cost. This article describes a novel paraffin product made of naturally occurring fatty acids/glycerides trapped into high density polyethylene (HDPE) pellets and its performance in a building envelope application, with the ultimate goal of commercializing a low-cost PCM platform. The low-cost PCM pellets were mixed with cellulose insulation, installed in external walls and field-tested under natural weatherization conditions for a period of several months. In addition, several PCM samples and PCM-cellulose samples were prepared under controlled conditions for laboratory-scale testing. The laboratory tests were performed to determine the phase change properties of PCM-enhanced cellulose insulation both at microscopic and macroscopic levels. This article presents the data and analysis from the exterior test wall and the laboratory-scale test data. PCM behavior is influenced by the weather and interior conditions, PCM phase change temperature and PCM distribution within the wall cavity, among other factors. Under optimal conditions, the field data showed up to 20% reduction in weekly heat transfer through an external wall due to the PCM compared to cellulose-only insulation.

Phase transition and luminescence properties from vapor etched silicon

International Nuclear Information System (INIS)

Aouida, S.; Saadoun, M.; Ben Saad, K.; Bessais, B.

2006-01-01

In this work, we present a study on the structure and photoluminescence (PL) properties of a non-conventional ammonium hexafluorosilicate (NH 4 ) 2 SiF 6 (white powder) obtained from HNO 3 /HF chemical vapor etching (CVE) of silicon wafers. The CVE method leads either to the formation of luminescent Porous Silicon (PS) or SiO x /Si-containing (NH 4 ) 2 SiF 6 depending on the experimental conditions. At specific conditions (i.e., HNO 3 / HF volume ratio > 1 / 4), the CVE technique can generate instead of PS, a (NH 4 ) 2 SiF 6 phase where SiO x /Si particles are embedded. The (NH 4 ) 2 SiF 6 marketed powder is not luminescent, while that obtained from silicon vapor-etching presents a noticeable intense and stable photoluminescence (PL), which was found to have mainly two shoulders at 1.98 and 2.1 eV. Two processes have been proposed to explain this PL property. First, the visible luminescence around 1.98 eV would come from silicon nanoparticles embedded in the powder, having a distribution size that does not allow SiO x species to influence their own PL. Second, the PL shoulder around 2.1 eV would originate from small silicon nanoparticles trapped in SiO x features, leading to oxide related states that may trap electrons or excitons, depending on the silicon nanoparticle size, wherein radiative recombination occurs. The PL shoulder could become broader at low temperatures suggesting the existence of radiative recombination in SiO x related defects

Ultra-low Cost, Lightweight, Molded, Chalcogenide Glass-Silicon Oxycarbide Composite Mirror Components, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — After optical performance, the most important metric for advanced optical systems is the areal cost (cost per square meter of collecting aperture). Future NASA space...

High-speed, low-damage grinding of advanced ceramics Phase 1. Final report

Energy Technology Data Exchange (ETDEWEB)

Kovach, J.A. [Eaton Corp., Willoughby Hills, OH (United States). Mfg. Technologies Center; Malkin, S. [Univ. of Massachusetts (United States)

1995-03-01

In manufacture of structural ceramic components, grinding costs can comprise up to 80% of the entire manufacturing cost. Most of these costs arise from the conventional multi-step grinding process with numerous grinding wheels and additional capital equipment, perishable dressing tools, and labor. In an attempt to reduce structural ceramic grinding costs, a feasibility investigation was undertaken to develop a single step, roughing-finishing process suitable for producing high-quality silicon nitride ceramic parts at high material removal rates at lower cost than traditional, multi-stage grinding. This feasibility study employed combined use of laboratory grinding tests, mathematical grinding models, and characterization of resultant material surface condition. More specifically, this Phase 1 final report provides a technical overview of High-Speed, Low-Damage (HSLD) ceramic grinding and the conditions necessary to achieve the small grain depths of cut necessary for low damage grinding while operating at relatively high material removal rates. Particular issues addressed include determining effects of wheel speed and material removal rate on resulting mode of material removal (ductile or brittle fracture), limiting grinding forces, calculation of approximate grinding zone temperatures developed during HSLD grinding, and developing the experimental systems necessary for determining HSLD grinding energy partition relationships. In addition, practical considerations for production utilization of the HSLD process are also discussed.

Preparation and Characterization of Silicone Liquid Core/Polymer Shell Microcapsules via Internal Phase Separation

DEFF Research Database (Denmark)

Gonzalez, Lidia; Kostrzewska, Malgorzata; Ma, Baoguang

2014-01-01

Microcapsules with a silicone liquid core surrounded by a polymeric shell were synthesisedthrough the controlled phase separation. The dispersed silicone phase consisted of the shellpolymer PMMA, a good solvent for the PMMA (dichloromethane, DCM) and a poor solvent(methylhydrosiloxane dimethylsil......Microcapsules with a silicone liquid core surrounded by a polymeric shell were synthesisedthrough the controlled phase separation. The dispersed silicone phase consisted of the shellpolymer PMMA, a good solvent for the PMMA (dichloromethane, DCM) and a poor solvent...

Low-Cost Planar MM-Wave Phased Array Antenna for Use in Mobile Satellite (MSAT) Platforms

DEFF Research Database (Denmark)

Ojaroudiparchin, Naser; Shen, Ming; Pedersen, Gert F.

2015-01-01

In this paper, a compact 8×8 phased array antenna for mobile satellite (MSAT) devices is designed and investigated. 64-elements of 22 GHz patch antennas with coaxial-probe feeds have been used for the proposed planar design. The antenna is designed on a low-cost FR4 substrate with thickness, diel...

Development of Solar Grade (SoG) Silicon

Energy Technology Data Exchange (ETDEWEB)

Joyce, David B; Schmid, Frederick

2008-01-18

The rapid growth of the photovoltaics (PV) industry is threatened by the ongoing shortage of suitable solar grade (SoG) silicon. Until 2004, the PV industry relied on the off spec polysilicon from the electronics industry for feedstock. The rapid growth of PV meant that the demand for SoG silicon predictably surpassed this supply. The long-term prospects for PV are very bright as costs have come down, and efficiencies and economies of scale make PV generated electricity ever more competitive with grid electricity. However, the scalability of the current process for producing poly silicon again threatens the future. A less costly, higher volume production technique is needed to supply the long-term growth of the PV industry, and to reduce costs of PV even further. This long-term need was the motivation behind this SBIR proposal. Upgrading metallurgical grade (MG) silicon would fulfill the need for a low-cost, large-scale production. Past attempts to upgrade MG silicon have foundered/failed/had trouble reducing the low segregation coefficient elements, B, P, and Al. Most other elements in MG silicon can be purified very efficiently by directional solidification. Thus, in the Phase I program, Crystal Systems proposed a variety of techniques to reduce B, P, and Al in MG silicon to produce a low cost commercial technique for upgrading MG silicon. Of the variety of techniques tried, vacuum refining and some slagging and additions turned out to be the most promising. These were pursued in the Phase II study. By vacuum refining, the P was reduced from 14 to 0.22 ppmw and the Al was reduced from 370 ppmw to 0.065 ppmw. This process was scaled to 40 kg scale charges, and the results were expressed in terms of half-life, or time to reduce the impurity concentration in half. Best half-lives were 2 hours, typical were 4 hours. Scaling factors were developed to allow prediction of these results to larger scale melts. The vacuum refining required the development of new crucibles

Pilot-Scale Silicone Process for Low-Cost Carbon Dioxide Capture

Energy Technology Data Exchange (ETDEWEB)

Singh, Surinder; Spiry, Irina; Wood, Benjamin; Hancu, Dan; Chen, Wei

2014-07-01

This report presents system and economicanalysis for a carbon-capture unit which uses an aminosilicone-based solvent for CO₂ capture in a pulverized coal (PC) boiler. The aminosilicone solvent is a 60/40 wt/wt mixture of 3-aminopropyl end-capped polydimethylsiloxane (GAP-1m) with tri-ethylene glycol (TEG) as a co-solvent. Forcomparison purposes, the report also shows results for a carbon-capture unit based on a conventional approach using mono-ethanol amine (MEA). The first year removal cost of CO₂ for the aminosilicone-based carbon-capture process is $46.04/ton of CO₂ as compared to $60.25/ton of CO₂ when MEA is used. The aminosilicone- based process has <77% of the CAPEX of a system using MEA solvent. The lower CAPEX is due to several factors, including the higher working capacity of the aminosilicone solvent compared the MEA, which reduces the solvent flow rate required, reducing equipment sizes. If it is determined that carbon steel can be used in the rich-lean heat exchanger in the carbon capture unit, the first year removal cost of CO₂ decreases to $44.12/ton. The aminosilicone-based solvent has a higherthermal stability than MEA, allowing desorption to be conducted at higher temperatures and pressures, decreasing the number of compressor stages needed. The aminosilicone-based solvent also has a lowervapor pressure, allowing the desorption to be conducted in a continuous-stirred tank reactor versus a more expensive packed column. The aminosilicone-based solvent has a lowerheat capacity, which decreases the heat load on the desorber. In summary, the amino-silicone solvent has significant advantages overconventional systems using MEA.

A Low-Cost, High-Precision Navigator, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — Toyon Research Corporation proposes to develop and demonstrate a prototype low-cost precision navigation system using commercial-grade gyroscopes and accelerometers....

Silicon Ingot Casting - Heat Exchanger Method Multi-wire Slicing - Fixed Abrasive Slicing Technique. Phase 3 Silicon Sheet Growth Development for the Large Area Sheet Task of the Low-cost Solar Array Project

Science.gov (United States)

Schmid, F.; Khattak, C. P.

1979-01-01

Several 20 cm diameter silicon ingots, up to 6.3 kg. were cast with good crystallinity. The graphite heat zone can be purified by heating it to high temperatures in vacuum. This is important in reducing costs and purification of large parts. Electroplated wires with 45 um synthetic diamonds and 30 um natural diamonds showed good cutting efficiency and lifetime. During slicing of a 10 cm x 10 cm workpiece, jerky motion occurred in the feed and rocking mechanisms. This problem is corrected and modifications were made to reduce the weight of the bladeheat by 50%.

Large area, low cost space solar cells with optional wraparound contacts

Science.gov (United States)

Michaels, D.; Mendoza, N.; Williams, R.

1981-01-01

Design parameters for two large area, low cost solar cells are presented, and electron irradiation testing, thermal alpha testing, and cell processing are discussed. The devices are a 2 ohm-cm base resistivity silicon cell with an evaporated aluminum reflector produced in a dielectric wraparound cell, and a 10 ohm-cm silicon cell with the BSF/BSR combination and a conventional contact system. Both cells are 5.9 x 5.9 cm and require 200 micron thick silicon material due to mission weight constraints. Normalized values for open circuit voltage, short circuit current, and maximum power calculations derived from electron radiation testing are given. In addition, thermal alpha testing values of absorptivity and emittance are included. A pilot cell processing run produced cells averaging 14.4% efficiencies at AMO 28 C. Manufacturing for such cells will be on a mechanized process line, and the area of coverslide application technology must be considered in order to achieve cost effective production.

Low cost thin film poly-silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

NONE

2005-07-01

This report presents the results of a project to design and develop a high density plasma based thin-film poly-silicon (TFPS) deposition system based on PQL proprietary advanced plasma technology to produce semiconductor quality TFPS for fabricating a TFPS solar cell. Details are given of the TFPS deposition system, the material development programme, solar cell structure, and cell efficiencies. The reproducibility of the deposition process and prospects for commercial exploitation are discussed.

Low-cost silicon wafer dicing using a craft cutter

KAUST Repository

Fan, Yiqiang; Carreno, Armando Arpys Arevalo; Li, Huawei; Foulds, Ian G.

2014-01-01

feature of 3 mm by 3 mm. We performed this scribing process on the top polished surface of a silicon wafer; we also created a scribing method for the back-unpolished surface in order to protect the structures on the wafer during scribing. Compared

Deep Ultraviolet Macroporous Silicon Filters, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — This SBIR Phase I proposal describes a novel method to make deep and far UV optical filters from macroporous silicon. This type of filter consists of an array of...

Study program to develop and evaluate die and container materials for the growth of silicon ribbons. [for development of low cost solar cells

Science.gov (United States)

Addington, L. A.; Ownby, P. D.; Yu, B. B.; Barsoum, M. W.; Romero, H. V.; Zealer, B. G.

1979-01-01

The development and evaluation of proprietary coatings of pure silicon carbide, silicon nitride, and aluminum nitride on less pure hot pressed substrates of the respective ceramic materials, is described. Silicon sessile drop experiments were performed on coated test specimens under controlled oxygen partial pressure. Prior to testing, X-ray diffraction and SEM characterization was performed. The reaction interfaces were characterized after testing with optical and scanning electron microscopy and Auger electron spectroscopy. Increasing the oxygen partial pressure was found to increase the molten silicon contact angle, apparently because adsorbed oxygen lowers the solid-vapor interfacial free energy. It was also found that adsorbed oxygen increased the degree of attack of molten silicon upon the chemical vapor deposited coatings. Cost projections show that reasonably priced, coated, molten silicon resistant refractory material shapes are obtainable.

Flow restrictor silicon membrane microvalve actuated by optically controlled paraffin phase transition

International Nuclear Information System (INIS)

Kolari, K; Havia, T; Stuns, I; Hjort, K

2014-01-01

Restrictor valves allow proportional control of fluid flow but are rarely integrated in microfluidic systems. In this study, an optically actuated silicon membrane restrictor microvalve is demonstrated. Its actuation is based on the phase transition of paraffin, using a paraffin wax mixed with a suitable concentration of optically absorbing nanographite particles. Backing up the membrane with oil (the melted paraffin) allows for a compliant yet strong contact to the valve seat, which enables handling of high pressures. At flow rates up to 30 µL min −1 and at a pressure of 2 bars, the valve can successfully be closed and control the flow level by restriction. The use of this paraffin composite as an adhesive layer sandwiched between the silicon valve and glass eases fabrication. This type of restrictor valve is best suited for high pressure, low volume flow silicon-based nanofluidic systems. (paper)

Release of low molecular weight silicones and platinum from silicone breast implants.

Science.gov (United States)

Lykissa, E D; Kala, S V; Hurley, J B; Lebovitz, R M

1997-12-01

We have conducted a series of studies addressing the chemical composition of silicone gels from breast implants as well as the diffusion of low molecular weight silicones (LM-silicones) and heavy metals from intact implants into various surrounding media, namely, lipid-rich medium (soy oil), aqueous tissue culture medium (modified Dulbecco's medium, DMEM), or an emulsion consisting of DMEM plus 10% soy oil. LM-silicones in both implants and surrounding media were detected and quantitated using gas chromatography (GC) coupled with atomic emission (GC-AED) as well as mass spectrometric (GC/MS) detectors, which can detect silicones in the nanogram range. Platinum, a catalyst used in the preparation of silicone gels, was detected and quantitated using inductive argon-coupled plasma/mass spectrometry (ICP-MS), which can detect platinum in the parts per trillion range. Our results indicate that GC-detectable low molecular weight silicones contribute approximately 1-2% to the total gel mass and consist predominantly of cyclic and linear poly-(dimethylsiloxanes) ranging from 3 to 20 siloxane [(CH3)2-Si-O] units (molecular weight 200-1500). Platinum can be detected in implant gels at levels of approximately 700 micrograms/kg by ICP-MS. The major component of implant gels appears to be high molecular weight silicone polymers (HM-silicones) too large to be detected by GC. However, these HM-silicones can be converted almost quantitatively (80% by mass) to LM-silicones by heating implant gels at 150-180 degrees C for several hours. We also studied the rates at which LM-silicones and platinum leak through the intact implant outer shell into the surrounding media under a variety of conditions. Leakage of silicones was greatest when the surrounding medium was lipid-rich, and up to 10 mg/day LM-silicones was observed to diffuse into a lipid-rich medium per 250 g of implant at 37 degrees C. This rate of leakage was maintained over a 7-day experimental period. Similarly, platinum was

Fabrication of low cost soft tissue prostheses with the desktop 3D printer.

Science.gov (United States)

He, Yong; Xue, Guang-huai; Fu, Jian-zhong

2014-11-27

Soft tissue prostheses such as artificial ear, eye and nose are widely used in the maxillofacial rehabilitation. In this report we demonstrate how to fabricate soft prostheses mold with a low cost desktop 3D printer. The fabrication method used is referred to as Scanning Printing Polishing Casting (SPPC). Firstly the anatomy is scanned with a 3D scanner, then a tissue casting mold is designed on computer and printed with a desktop 3D printer. Subsequently, a chemical polishing method is used to polish the casting mold by removing the staircase effect and acquiring a smooth surface. Finally, the last step is to cast medical grade silicone into the mold. After the silicone is cured, the fine soft prostheses can be removed from the mold. Utilizing the SPPC method, soft prostheses with smooth surface and complicated structure can be fabricated at a low cost. Accordingly, the total cost of fabricating ear prosthesis is about $30, which is much lower than the current soft prostheses fabrication methods.

A low-cost non-intercepting beam current and phase monitor for heavy ions

International Nuclear Information System (INIS)

Bogaty, J.M.; Clifft, B.E.

1995-01-01

A low cost ion beam measurement system has been developed for use at ATLAS. The system provides nondestructive phase and intensity measurement of passing ion beam bunches by sensing their electric fields. Bunches traverse a short tubular electrode thereby inducing displacement currents. These currents are brought outside the vacuum jacket where a lumped inductance resonates electrode capacitance at one of the bunching harmonic frequencies. This configuration yields a basic sensitivity of a few hundred millivolts signal per microampere of beam current. Beam induced radiofrequency signals are summed against an offset frequency generated by the master oscillator. The resulting difference frequency conveys beam intensity and bunch phase information which is sent to separate processing channels. One channel utilizes a phase locked loop to stabilize phase readings during microsecond beam drop outs. The other channel uses a linear full-wave active rectifier circuit which converts sine wave signal amplitude to a DC voltage representing beam current. Plans are in progress to install this new diagnostic at several locations in ATLAS which should help shorten the tuning cycle of new ion species

Investigation of the phase formation from nickel coated nanostructured silicon

Science.gov (United States)

Shilyaeva, Yulia I.; Pyatilova, Olga V.; Berezkina, Alexandra Yu.; Sysa, Artem V.; Dudin, Alexander A.; Smirnov, Dmitry I.; Gavrilov, Sergey A.

2016-12-01

In this paper, the influence of the conditions of chemical and electrochemical nickel plating of nanostructured silicon and subsequent heat treatment on the phase composition of Si/Ni structures with advanced interface is studied. Nanostructured silicon formed by chemical and electrochemical etching was used for the formation of a developed interphase surface. The resulting Si/Ni samples were analyzed using scanning electron microscopy, energy dispersive X-ray analysis, and X-ray phase analysis. The experiments have revealed the differences in phase composition of the Si/Ni structures obtained by different methods, both before and after heat treatment.

Laboratory Demonstration of Low-Cost Method for Producing Thin Film on Nonconductors.

Science.gov (United States)

Ebong, A. U.; And Others

1991-01-01

A low-cost procedure for metallizing a silicon p-n junction diode by electroless nickel plating is reported. The procedure demonstrates that expensive salts can be excluded without affecting the results. The experimental procedure, measurement, results, and discussion are included. (Author/KR)

Low-Cost Phase Change Material for Building Envelopes

Energy Technology Data Exchange (ETDEWEB)

Abhari, Ramin [Renewable Energy Group

2015-08-06

A low-cost PCM process consisting of conversion of fats and oils to PCM-range paraffins, and subsequent “encapsulation” of the paraffin using conventional plastic compounding/pelletizing equipment was demonstrated. The PCM pellets produced were field-tested in a building envelope application. This involved combining the PCM pellets with cellulose insulation, whereby 33% reduction in peak heat flux and 12% reduction in heat gain was observed (average summertime performance). The selling price of the PCM pellets produced according to this low-cost process is expected to be in the $1.50-$3.00/lb range, compared to current encapsulated PCM price of about $7.00/lb. Whole-building simulations using corresponding PCM thermal analysis data suggest a payback time of 8 to 16 years (at current energy prices) for an attic insulation retrofit project in the Phoenix climate area.

Low surface damage dry etched black silicon

DEFF Research Database (Denmark)

Plakhotnyuk, Maksym M.; Gaudig, Maria; Davidsen, Rasmus Schmidt

2017-01-01

Black silicon (bSi) is promising for integration into silicon solar cell fabrication flow due to its excellent light trapping and low reflectance, and a continuously improving passivation. However, intensive ion bombardment during the reactive ion etching used to fabricate bSi induces surface dam...

Compact Low-Power-Consumption 28-Gbaud QPSK/16-QAM Integrated Silicon Photonic/Electronic Coherent Receiver

NARCIS (Netherlands)

Zhang, J.; Verbist, J.; Moeneclaey, B.; van Weerdenburg, J.; van Uden, R.G.H.; Chen, H.; van Campenhout, J.; Okonkwo, C; Yin, X; Bauwelinck, J.; Roelkens, G.

2016-01-01

We demonstrate the codesign and cointegration of an ultracompact silicon photonic receiver and a low-power-consumption (155 mW/channel) two-channel linear transimpedance amplifier array. Operation below the forward error coding (FEC) threshold both for quadrature phase-shift keying (QPSK) and

Photoluminescence at room temperature of liquid-phase crystallized silicon on glass

Directory of Open Access Journals (Sweden)

Michael Vetter

2016-12-01

Full Text Available The room temperature photoluminescence (PL spectrum due band-to-band recombination in an only 8 μm thick liquid-phase crystallized silicon on glass solar cell absorber is measured over 3 orders of magnitude with a thin 400 μm thick optical fiber directly coupled to the spectrometer. High PL signal is achieved by the possibility to capture the PL spectrum very near to the silicon surface. The spectra measured within microcrystals of the absorber present the same features as spectra of crystalline silicon wafers without showing defect luminescence indicating the high electronic material quality of the liquid-phase multi-crystalline layer after hydrogen plasma treatment.

Silicon for ultra-low-level detectors and sup 32 Si

Energy Technology Data Exchange (ETDEWEB)

Plaga, R. (Max Planck Inst. fuer Kernphysik, Heidelberg (Germany))

1991-11-15

A recent dark matter experiment using a silicon diode detector confirms that the decay of {sup 32}Si is a dangerous background in ultra-low-level experiments using silicon as detector material or shielding. In this Letter we study the mechanism of how {sup 32}Si enters commercially available silicon. Ways to avoid this contamination are pointed out. Limits on the {sup 32}Si content of silicon from measurements with miniaturized low-level proportional counters are also given. (orig.).

Study of the structure and phase composition of nanocrystalline silicon oxynitride films synthesized by ICP-CVD

International Nuclear Information System (INIS)

Fainer, N.I.; Kosinova, M.L.; Maximovsky, E.A.; Rumyantsev, Yu.M.; Kuznetsov, F.A.; Kesler, V.G.; Kirienko, V.V.

2005-01-01

Thin nanocrystalline silicon oxynitride films were synthesized for the first time at low temperatures (373-750 K) by inductively coupled plasma chemical vapor deposition (ICP-CVD) using gas mixture of oxygen and hexamethyldisilazane Si 2 NH(CH 3 ) 6 (HMDS) as precursors. Single crystal Si (1 0 0) wafers 100 mm in diameter were used as substrates. Physicochemical properties of the thin films were examined using ellipsometry, IR spectroscopy, Auger electron and X-ray photoelectron spectroscopy and XRD using synchrotron radiation (SR). The studies of the phase composition of nanocrystalline films of silicon oxynitride showed that in the case of oxygen excess in the initial gas mixture, they contain a mixture of hexagonal phases: h-SiO 2 and α-Si 3 N 4 . These phases consist of oriented nanocrystals of 2-3 nm size. In case of decrease of oxygen concentration in the initial gas mixture, the fraction of the α-Si 3 N 4 phase increases

Study of the structure and phase composition of nanocrystalline silicon oxynitride films synthesized by ICP-CVD

Energy Technology Data Exchange (ETDEWEB)

Fainer, N.I. [Nikolaev Institute of Inorganic Chemistry SB RAS, 3, Acad. Lavrentjev Pr., Novosibirsk 630090 (Russian Federation)]. E-mail: nadezhda@che.nsk.su; Kosinova, M.L. [Nikolaev Institute of Inorganic Chemistry SB RAS, 3, Acad. Lavrentjev Pr., Novosibirsk 630090 (Russian Federation); Maximovsky, E.A. [Nikolaev Institute of Inorganic Chemistry SB RAS, 3, Acad. Lavrentjev Pr., Novosibirsk 630090 (Russian Federation); Rumyantsev, Yu.M. [Nikolaev Institute of Inorganic Chemistry SB RAS, 3, Acad. Lavrentjev Pr., Novosibirsk 630090 (Russian Federation); Kuznetsov, F.A. [Nikolaev Institute of Inorganic Chemistry SB RAS, 3, Acad. Lavrentjev Pr., Novosibirsk 630090 (Russian Federation); Kesler, V.G. [Institute of Semiconductor Physics SB RAS, Acad. Lavrentjev pr., 13, Novosibirsk 630090 (Russian Federation); Kirienko, V.V. [Institute of Semiconductor Physics SB RAS, Acad. Lavrentjev pr., 13, Novosibirsk 630090 (Russian Federation)

2005-05-01

Thin nanocrystalline silicon oxynitride films were synthesized for the first time at low temperatures (373-750 K) by inductively coupled plasma chemical vapor deposition (ICP-CVD) using gas mixture of oxygen and hexamethyldisilazane Si{sub 2}NH(CH{sub 3}){sub 6} (HMDS) as precursors. Single crystal Si (1 0 0) wafers 100 mm in diameter were used as substrates. Physicochemical properties of the thin films were examined using ellipsometry, IR spectroscopy, Auger electron and X-ray photoelectron spectroscopy and XRD using synchrotron radiation (SR). The studies of the phase composition of nanocrystalline films of silicon oxynitride showed that in the case of oxygen excess in the initial gas mixture, they contain a mixture of hexagonal phases: h-SiO{sub 2} and {alpha}-Si{sub 3}N{sub 4}. These phases consist of oriented nanocrystals of 2-3 nm size. In case of decrease of oxygen concentration in the initial gas mixture, the fraction of the {alpha}-Si{sub 3}N{sub 4} phase increases.

The fabrication of quantum wires in silicon utilising the characteristics of solid phase epitaxial regrowth of crystalline silicon

International Nuclear Information System (INIS)

Liu, A.C.Y.; McCallum, J.C.

1998-01-01

The process of solid phase epitaxy (SPE) in semiconductor materials is one which has been intensively researched due to possible applications in the semiconductor industry. SPE is a solid phase transformation, in which an amorphous layer can be recrystallized either through heating or a combination of heating and ion bombardment. The transformation is believed to occur exclusively at the interface between the amorphous and crystalline layers, with individual atoms from the amorphous phase being incorporated into the crystalline phase by some point defect mechanism. The process has been observed to follow an Arrhenius temperature dependence. A wafer silicon was subjected to a multi-energy silicon implant through a fine nickel grid to amorphise region to a depth of 5μm creating an array of amorphous wells. Metal impurity atoms were then implanted in this region at energy of 500 keV. Samples were examined using an optical microscope and the Alphastep profiler at RMIT. It was confirmed that burgeoning wells were about 2 μm wide and rose about 0.01 μm above the silicon substrate

Broadband antireflective silicon carbide surface produced by cost-effective method

DEFF Research Database (Denmark)

Argyraki, Aikaterini; Ou, Yiyu; Ou, Haiyan

2013-01-01

A cost-effective method for fabricating antireflective subwavelength structures on silicon carbide is demonstrated. The nanopatterning is performed in a 2-step process: aluminum deposition and reactive ion etching. The effect, of the deposited aluminum film thickness and the reactive ion etching...... conditions, on the average surface reflectance and nanostructure landscape have been investigated systematically. The average reflectance of silicon carbide surface is significantly suppressed from 25.4% to 0.05%, under the optimal experimental conditions, in the wavelength range of 390-784 nm. The presence...... of stochastic nanostructures also changes the wetting properties of silicon carbide surface from hydrophilic (47°) to hydrophobic (108°)....

Transformational silicon electronics

KAUST Repository

Rojas, Jhonathan Prieto; Sevilla, Galo T.; Ghoneim, Mohamed T.; Inayat, Salman Bin; Ahmed, Sally; Hussain, Aftab M.; Hussain, Muhammad Mustafa

2014-01-01

In today's traditional electronics such as in computers or in mobile phones, billions of high-performance, ultra-low-power devices are neatly integrated in extremely compact areas on rigid and brittle but low-cost bulk monocrystalline silicon (100

Experimental Demonstration of Phase Sensitive Parametric Processes in a Nano-Engineered Silicon Waveguide

DEFF Research Database (Denmark)

Kang, Ning; Fadil, Ahmed; Pu, Minhao

2013-01-01

We demonstrate experimentally phase-sensitive processes in nano-engineered silicon waveguides for the first time. Furthermore, we highlight paths towards the optimization of the phase-sensitive extinction ratio under the impact of two-photon and free-carrier absorption.......We demonstrate experimentally phase-sensitive processes in nano-engineered silicon waveguides for the first time. Furthermore, we highlight paths towards the optimization of the phase-sensitive extinction ratio under the impact of two-photon and free-carrier absorption....

Sensorless control of low-cost single-phase hybrid switched reluctance motor drive

DEFF Research Database (Denmark)

Jakobsen, Uffe; Lu, Kaiyuan; Rasmussen, Peter Omand

2013-01-01

This paper presents a sensorless-controlled, low-cost, low-power, variable-speed drive system suitable for fan and pump applications. The main advantages of this drive system are the low system cost, simple converter structure, and simple but robust sensorless control technique. The drive motor...... is a special Hybrid Switched Reluctance Motor (HSRM). The proposed sensorless control method utilizes beneficially the stator side permanent magnet field and its performance is motor parameter independent. The unique low-cost drive system solution, simple and robust sensorless control features of this drive...

Sensorless Control of Low-cost Single-phase Hybrid Switched Reluctance Motor Drive

DEFF Research Database (Denmark)

Jakobsen, Uffe; Lu, Kaiyuan; Rasmussen, Peter Omand

2015-01-01

This paper presents a sensorless-controlled, low-cost, low-power, and variable-speed drive system suitable for fan and pump applications. The main advantages of this drive system are the low system cost, simple converter structure, and simple but robust sensorless control technique. The drive motor...... is a special hybrid switched reluctance motor. The proposed sensorless control method beneficially utilizes the stator side PM field and its performance is motor parameter independent. The unique low-cost drive system solution, simple and robust sensorless control features of this drive system, is demonstrated...

An automated ion implant/pulse anneal machine for low cost silicon cell production

International Nuclear Information System (INIS)

Armini, A.J.; Bunker, S.N.; Spitzer, M.B.

1982-01-01

The continuing development of a high throughput ion implanter and a pulsed electron beam annealer designed for dedicated silicon solar cell manufacture is reviewed. This equipment is intended for production of junctions in 10 cm wide wafers at a throughput up to 10 MWsub(p) per year. The principal features of the implanter are the lack of mass analysis and defocusing utilizing electrostatic deflection. The implanted surface is annealed by liquid phase epitaxy resulting from a single burst of a large area electron beam. Cells with non-mass analyzed ion implantation have yielded AM1 cell efficiencies in excess of 15%. Pulse annealed Czochralski cells have been made with AM1 efficiencies of 13% vs. 15% for a furnace annealed group. Results of pulse annealing of polycrystalline materials indicate that cell performance comparable to diffusion can be obtained. (Auth.)

Active phase correction of high resolution silicon photonic arrayed waveguide gratings.

Science.gov (United States)

Gehl, M; Trotter, D; Starbuck, A; Pomerene, A; Lentine, A L; DeRose, C

2017-03-20

Arrayed waveguide gratings provide flexible spectral filtering functionality for integrated photonic applications. Achieving narrow channel spacing requires long optical path lengths which can greatly increase the footprint of devices. High index contrast waveguides, such as those fabricated in silicon-on-insulator wafers, allow tight waveguide bends which can be used to create much more compact designs. Both the long optical path lengths and the high index contrast contribute to significant optical phase error as light propagates through the device. Therefore, silicon photonic arrayed waveguide gratings require active or passive phase correction following fabrication. Here we present the design and fabrication of compact silicon photonic arrayed waveguide gratings with channel spacings of 50, 10 and 1 GHz. The largest device, with 11 channels of 1 GHz spacing, has a footprint of only 1.1 cm2. Using integrated thermo-optic phase shifters, the phase error is actively corrected. We present two methods of phase error correction and demonstrate state-of-the-art cross-talk performance for high index contrast arrayed waveguide gratings. As a demonstration of possible applications, we perform RF channelization with 1 GHz resolution. Additionally, we generate unique spectral filters by applying non-zero phase offsets calculated by the Gerchberg Saxton algorithm.

Multipurpose exciter with low phase noise

Science.gov (United States)

Conroy, B.; Le, D.

1989-01-01

Results of an effort to develop a lower-cost exciter with high stability, low phase noise, and controllable phase and frequency for use in Deep Space Network and Goldstone Solar System Radar applications are discussed. Included is a discussion of the basic concept, test results, plans, and concerns.

Silicon graphene waveguide tunable broadband microwave photonics phase shifter.

Science.gov (United States)

Capmany, José; Domenech, David; Muñoz, Pascual

2014-04-07

We propose the use of silicon graphene waveguides to implement a tunable broadband microwave photonics phase shifter based on integrated ring cavities. Numerical computation results show the feasibility for broadband operation over 40 GHz bandwidth and full 360° radiofrequency phase-shift with a modest voltage excursion of 0.12 volt.

Cost analysis of two silicon heterojunction solar cell designs

NARCIS (Netherlands)

Louwen, A.; van Sark, W.G.J.H.M.; Schropp, R.E.I.; Turkenburg, W.C.; Faaij, A.P.C.

2013-01-01

Research and Development of Silicon Heterojunction (SHJ) solar cells has seen a marked increase since the recent expiry of core patents describing SHJ technology. This paper investigates the production costs associated with two different SHJ cell designs investigated within the FLASH programme, a

Flexible Thermoelectric Generators on Silicon Fabric

KAUST Repository

Sevilla, Galo T.

2012-01-01

In this work, the development of a Thermoelectric Generator on Flexible Silicon Fabric is explored to extend silicon electronics for flexible platforms. Low cost, easily deployable plastic based flexible electronics are of great interest for smart

High-Speed, Low-Power ADC for Digital Beam Forming (DBF) Systems, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — In Phase 1, Ridgetop Group designed a high-speed, yet low-power silicon germanium (SiGe)-based, analog-to-digital converter (ADC) to be a key element for digital...

Gas phase considerations for the deposition of thin film silicon solar cells by VHF-PECVD at low substrate temperatures

NARCIS (Netherlands)

Rath, J.K.; Verkerk, A.D.; Brinza, M.; Schropp, R.E.I.; Goedheer, W.J.; Krzhizhanovskaya, V.V.; Gorbachev, Y.E.; Orlov, K.E.; Khilkevitch, E.M.; Smirnov, A.S.

2008-01-01

Fabrication of thin film silicon solar cells on cheap plastics or paper-like substrate requires deposition process at very low substrate temperature, typically ≤ 100 °C. In a chemical vapor deposition process, low growth temperatures lead to materials with low density, high porosity, high disorder

Development of advanced Czochralski Growth Process to produce low cost 150 KG silicon ingots from a single crucible for technology readiness

Science.gov (United States)

1981-01-01

The goals in this program for advanced czochralski growth process to produce low cost 150 kg silicon ingots from a single crucible for technology readiness are outlined. To provide a modified CG2000 crystal power capable of pulling a minimum of five crystals, each of approximately 30 kg in weight, 150 mm diameter from a single crucible with periodic melt replenishment. Crystals to have: resistivity of 1 to 3 ohm cm, p-type; dislocation density below 1- to the 6th power per cm; orientation (100); after growth yield of greater than 90%. Growth throughput of greater than 2.5 kg per hour of machine operation using a radiation shield. Prototype equipment suitable for use as a production facility. The overall cost goal is $.70 per peak watt by 1986. To accomplish these goals, the modified CG2000 grower and development program includes: (1) increased automation with a microprocessor based control system; (2) sensors development which will increase the capability of the automatic controls system, and provide technology transfer of the developed systems.

Temperature effect on phase states of quartz nano-crystals in silicon single crystal

International Nuclear Information System (INIS)

Kalanov, M.U.; Ibragimova, E.M.; Khamraeva, R.N.; Rustamova, V.M.; Ummatov, Kh.D.

2006-01-01

Full text: Oxygen penetrates into the silicon lattice up to the concentration of 2·10 18 cm -3 in the course of growing [1]. By the author's opinion at a low oxygen content the formation of solid solution is possible in the local defect places of the silicon single crystal lattice due to the difference in effective ion radius of oxygen and silicon (r O 0.176 and r Si = 0.065 nm). Upon reaching some critical content (∼ 10 17 cm -3 ), it becomes favorable energetically for oxygen ions to form precipitates (SiO x ) and finally a dielectric layer (stoichiometric inclusions of SiO 2 ). It was shown later that depending on the growth conditions, indeed the quartz crystal inclusions are formed in the silicon single crystals at an amount of 0.3 /0.5 wt. % [2]. However the authors did not study a phase state of the quartz inclusions. Therefore the aim of this work was to study a phase state of the quartz inclusions in silicon crystal at various temperatures. We examined the silicon single crystals grown by Czochralski technique, which were cut in (111) plane in the form of disk of 20 mm diameter and 1.5 thickness and had hole conductivity with the specific resistance ρ o ≅ 1/10 Ohm cm. The dislocation density was N D ≅ 10 1 /10 3 cm -2 , the concentrations of oxygen and boron were N 0 ≅ 2/ 4·10 17 cm -3 and N B ≅ 3*10 15 cm -3 . Structure was analyzed at the set-up DRON-UM1 with high temperature supply UVD-2000 ( CuK = 0.1542 nm) at the temperatures of 300, 1173 and 1573 K measured with platinum-platinum-rhodium thermocouple. The high temperature diffraction spectrum measured at 1573 K in the angle range (2Θ≅10/70 d egree ) there is only one main structure reflection (111) with a high intensity and d/n ≅ 0.3136 nm (2 Θ≅ 28.5 d egree ) from the matrix lattice of silicon single crystal. The weak line at 2 Θ≅ 25.5 d egree ( d/n≅0.3136 nm) is β component of the main reflection (111), and the weak structure peak at 2Θ≅59 d egree ( d/n≅ 0.1568 nm

High-End Silicon PDICs

Directory of Open Access Journals (Sweden)

H. Zimmermann

2008-05-01

Full Text Available An overview on integrated silicon photodiodes and photodiode integrated circuits (PDICs or optoelectronic integrated circuits (OEICs for optical storage systems (OSS and fiber receivers is given. It is demonstrated, that by using low-cost silicon technologies high-performance OEICs being true competitors for some III/V-semiconductor OEICs can be realized. OSS-OEICs with bandwidths of up to 380 MHz and fiber receivers with maximum data rates of up to 11 Gbps are described. Low-cost data comm receivers for plastic optical fibers (POF as well as new circuit concepts for OEICs and highly parallel optical receivers are described also in the following.

Suppression of nanoindentation-induced phase transformation in crystalline silicon implanted with hydrogen

Science.gov (United States)

Jelenković, Emil V.; To, Suet

2017-09-01

In this paper the effect of hydrogen implantation in silicon on nanoindentation-induced phase transformation is investigated. Hydrogen ions were implanted in silicon through 300 nm thick oxide with double energy implantation (75 and 40 keV). For both energies implantation dose was 4 × 1016 cm-2. Some samples were thermally annealed at 400 °C. The micro-Raman spectroscopy was applied on nanoindentation imprints and the obtained results were related to the pop out/elbow appearances in nanoindentatioin unloading-displacement curves. The Raman spectroscopy revealed a suppression of Si-XII and Si-III phases and formation of a-Si in the indents of hydrogen implanted Si. The high-resolution x-ray diffraction measurements were taken to support the analysis of silicon phase formation during nanoindentation. Implantation induced strain, high hydrogen concentration, and platelets generation were found to be the factors that control suppression of c-Si phases Si-XII and Si-III, as well as a-Si phase enhancement during nanoindentation. [Figure not available: see fulltext.

Preparation and mechanical properties of liquid-phase sinterd silicon carbide; Herstellung und mechanische Eigenschaften von fluessigphasengesintertem Siliziumkarbid

Energy Technology Data Exchange (ETDEWEB)

Wiedmann, I.

1998-12-01

Liquid-phase sintered silicon carbide ceramics, LPS-SiC, were prepared, and the influence of structure and chemical secondary phase composition on the mechanical properties was investigated in order to identify LPS-SiC materials which can be produced reproducibly and with low loss of mass by simple techniques, i.e. without powder bed or encapsulation. Their profile of characteristics should be superior to conventional solid-phase sintered SiC and should be comparable with liquid-phase sintered silicon nitride ceramics. [Deutsch] In der vorliegenden Arbeit wurden fluessigphasengesinterte Siliziumkarbid-Keramiken, LPS-SiC, hergestellt und der Einfluss der Gefuegeausbildung und der chemischen Sekundaerphasenzusammensetzung auf die mechanischen Eigenschaften untersucht. Ziel war es, LPS-SiC-Materialien zu identifizieren, die ohne besonderen Vorkehrungen wie Pulverbett oder Einkapselung reproduzierbar und mit geringem Masseverlust hergestellt werden koennen. Das Eigenschaftsprofil sollte deutlich ueber dem von konventionell festphasengesintertem SiC liegen und vergleichbar zu fluessigphasengesinterten Siliziumnitrid-Keramiken sein. (orig.)

Low-Cost Composite Technology for Large Rocket Payload Fairings, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — The Commission on the Future of the U.S. Aerospace Industry states that reducing the cost to orbit is an essential ingredient for progress. This Phase I project will...

Removal of inclusions from silicon

Science.gov (United States)

Ciftja, Arjan; Engh, Thorvald Abel; Tangstad, Merete; Kvithyld, Anne; Øvrelid, Eivind Johannes

2009-11-01

The removal of inclusions from molten silicon is necessary to satisfy the purity requirements for solar grade silicon. This paper summarizes two methods that are investigated: (i) settling of the inclusions followed by subsequent directional solidification and (infiltration by ceramic foam filters. Settling of inclusions followed by directional solidification is of industrial importance for production of low-cost solar grade silicon. Filtration is reported as the most efficient method for removal of inclusions from the top-cut silicon scrap.

Silicon web process development

Science.gov (United States)

Duncan, C. S.; Seidensticker, R. G.; Mchugh, J. P.; Skutch, M. E.; Driggers, J. M.; Hopkins, R. H.

1981-01-01

The silicon web process takes advantage of natural crystallographic stabilizing forces to grow long, thin single crystal ribbons directly from liquid silicon. The ribbon, or web, is formed by the solidification of a liquid film supported by surface tension between two silicon filaments, called dendrites, which border the edges of the growing strip. The ribbon can be propagated indefinitely by replenishing the liquid silicon as it is transformed to crystal. The dendritic web process has several advantages for achieving low cost, high efficiency solar cells. These advantages are discussed.

Low loss hollow-core waveguide on a silicon substrate

Science.gov (United States)

Yang, Weijian; Ferrara, James; Grutter, Karen; Yeh, Anthony; Chase, Chris; Yue, Yang; Willner, Alan E.; Wu, Ming C.; Chang-Hasnain, Connie J.

2012-07-01

Optical-fiber-based, hollow-core waveguides (HCWs) have opened up many new applications in laser surgery, gas sensors, and non-linear optics. Chip-scale HCWs are desirable because they are compact, light-weight and can be integrated with other devices into systems-on-a-chip. However, their progress has been hindered by the lack of a low loss waveguide architecture. Here, a completely new waveguiding concept is demonstrated using two planar, parallel, silicon-on-insulator wafers with high-contrast subwavelength gratings to reflect light in-between. We report a record low optical loss of 0.37 dB/cm for a 9-μm waveguide, mode-matched to a single mode fiber. Two-dimensional light confinement is experimentally realized without sidewalls in the HCWs, which is promising for ultrafast sensing response with nearly instantaneous flow of gases or fluids. This unique waveguide geometry establishes an entirely new scheme for low-cost chip-scale sensor arrays and lab-on-a-chip applications.

Low temperature CVD deposition of silicon carbide

International Nuclear Information System (INIS)

Dariel, M.; Yeheskel, J.; Agam, S.; Edelstein, D.; Lebovits, O.; Ron, Y.

1991-04-01

The coating of graphite on silicon carbide from the gaseous phase in a hot-well, open flow reactor at 1150degC is described. This study constitutes the first part of an investigation of the process for the coating of nuclear fuel by chemical vapor deposition (CVD)

Low-resistivity photon-transparent window attached to photo-sensitive silicon detector

International Nuclear Information System (INIS)

Holland, S.E.

2000-01-01

The invention comprises a combination of a low resistivity, or electrically conducting, silicon layer that is transparent to long or short wavelength photons and is attached to the backside of a photon-sensitive layer of silicon, such as a silicon wafer or chip. The window is applied to photon sensitive silicon devices such as photodiodes, charge-coupled devices, active pixel sensors, low-energy x-ray sensors and other radiation detectors. The silicon window is applied to the back side of a photosensitive silicon wafer or chip so that photons can illuminate the device from the backside without interference from the circuit printed on the frontside. A voltage sufficient to fully deplete the high-resistivity photosensitive silicon volume of charge carriers is applied between the low-resistivity back window and the front, patterned, side of the device. This allows photon-induced charge created at the backside to reach the front side of the device and to be processed by any circuitry attached to the front side. Using the inventive combination, the photon sensitive silicon layer does not need to be thinned beyond standard fabrication methods in order to achieve full charge-depletion in the silicon volume. In one embodiment, the inventive backside window is applied to high resistivity silicon to allow backside illumination while maintaining charge isolation in CCD pixels

Effects of silicon carbide on the phase developments in mullite-carbon ceramic composite

Directory of Open Access Journals (Sweden)

Fatai Olufemi ARAMIDE

2017-12-01

Full Text Available The effects of the addition of silicon carbide and sintering temperatures on the phases developed, in sintered ceramic composite produced from kaolin and graphite was investigated. The kaolin and graphite of known mineralogical composition were thoroughly blended with 4 and 8 vol % silicon carbide. From the homogeneous mixture of kaolin, graphite and silicon carbide, standard samples were prepared via uniaxial compaction. The test samples produced were subjected to firing (sintering at 1300°C, 1400°C and 1500°C. The sintered samples were characterized for the developed phases using x‐ray diffractometry analysis, microstructural morphology using ultra‐high resolution field emission scanning electron microscope (UHRFEGSEM. It was observed that microstructural morphology of the samples revealed the evolution of mullite, cristobalite and microcline. The kaolinite content of the raw kaolin undergoes transformation into mullite and excess silica, the mullite and the silica phases contents increased with increased sintering temperature. It is also generally observed that the graphite content progressively reduced linearly with increased sintering temperature. It is concluded that silicon carbide acts as anti-oxidant for the graphite, this anti-oxidant effect was more effective at 4 vol % silicon carbide.

Low cost AB{sub 5}-type hydrogen storage alloys for a nickel-metal hydride battery

Energy Technology Data Exchange (ETDEWEB)

Jiang Lijun [General Res. Inst. for Non-Ferrous Metals, Beijing (China); Zhan Feng [General Res. Inst. for Non-Ferrous Metals, Beijing (China); Bao Deyou [General Res. Inst. for Non-Ferrous Metals, Beijing (China); Qing Guangrong [General Res. Inst. for Non-Ferrous Metals, Beijing (China); Li Yaoquan [General Res. Inst. for Non-Ferrous Metals, Beijing (China); Wei Xiuying [General Res. Inst. for Non-Ferrous Metals, Beijing (China)

1995-12-15

The studies have been carried out on utilizing Ml(NiAl){sub 5}-based alloys as a low cost negative battery electrode. The replacement of nickel by copper improved the cycle lifetime to some extent without a decrease in capacity. Using Ml(NiAlCu){sub 5} alloys, hydrogen storage alloys with good overall characteristics and low cost were obtained through substituting cobalt or silicon for nickel. The discharge capacity was further increased by increasing the lanthanum content in lanthanum-rich mischmetal. (orig.)

Porous silicon gettering

Energy Technology Data Exchange (ETDEWEB)

Tsuo, Y.S.; Menna, P.; Pitts, J.R. [National Renewable Energy Lab., Golden, CO (United States)] [and others

1996-05-01

The authors have studied a novel extrinsic gettering method that uses the large surface areas produced by a porous-silicon etch as gettering sites. The annealing step of the gettering used a high-flux solar furnace. They found that a high density of photons during annealing enhanced the impurity diffusion to the gettering sites. The authors used metallurgical-grade Si (MG-Si) prepared by directional solidification casing as the starting material. They propose to use porous-silicon-gettered MG-Si as a low-cost epitaxial substrate for polycrystalline silicon thin-film growth.

Iron and silicon effect on the phase composition of nickel-beryllium bronzes

International Nuclear Information System (INIS)

Zakharov, A.M.; Zakharov, M.V.; Ajvaz'yan, N.G.

1977-01-01

In order to specify phase composition and strengthening heat treatment conditions for nickel beryllium bronzes that are promising electrode materials for welding of high strength steels and nickel-base superalloys, the primary section of the quinternary Cu-Ni-Be-Fe-S system was studied at constant nickel and beryllium concentration and varying silicon and iron concentration (max. 4% of every element). The study was made using the metallographic and x-ray phase techniques, determination of alloy solidus temperature, and exessphase microhardness testing. Silicon additions are shown to decrease abruptly and those of iron, in contrast, somewhat to raise the solidus temperature of ternary Cu + 2% Ni + 0.3% Be alloy. When added concurrently, iron compensates for the damaging silicon effect on the solidus temperature of Cu-Ni-Be alloys. The excess phases formed can be used as strengthening agents of Cu-Ni-Be-Si-Fe alloys during quenching and subsequent aging

Evolution of metastable phases in silicon during nanoindentation: mechanism analysis and experimental verification

Energy Technology Data Exchange (ETDEWEB)

Mylvaganam, K [Centre for Advanced Materials Technology, University of Sydney, NSW 2006 (Australia); Zhang, L C [School of Mechanical and Manufacturing Engineering, University of New South Wales, NSW 2052 (Australia); Eyben, P; Vandervorst, W [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Mody, J, E-mail: k.mylvaganam@usyd.edu.a, E-mail: Liangchi.zhang@unsw.edu.a, E-mail: eyben@imec.b, E-mail: jamody@imec.b, E-mail: vdvorst@imec.b [KU Leuven, Electrical Engineering Department, INSYS, Kasteelpark Arenberg 10, B-3001 Leuven (Belgium)

2009-07-29

This paper explores the evolution mechanisms of metastable phases during the nanoindentation on monocrystalline silicon. Both the molecular dynamics (MD) and the in situ scanning spreading resistance microscopy (SSRM) analyses were carried out on Si(100) orientation, and for the first time, experimental verification was achieved quantitatively at the same nanoscopic scale. It was found that under equivalent indentation loads, the MD prediction agrees extremely well with the result experimentally measured using SSRM, in terms of the depth of the residual indentation marks and the onset, evolution and dimension variation of the metastable phases, such as {beta}-Sn. A new six-coordinated silicon phase, Si-XIII, transformed directly from Si-I was discovered. The investigation showed that there is a critical size of contact between the indenter and silicon, beyond which a crystal particle of distorted diamond structure will emerge in between the indenter and the amorphous phase upon unloading.

Contrast in low-cost operational concepts for orbiting satellites

Science.gov (United States)

Walyus, Keith D.; Reis, James; Bradley, Arthur J.

2002-12-01

Older spacecraft missions, especially those in low Earth orbit with telemetry intensive requirements, required round-the-clock control center staffing. The state of technology relied on control center personnel to continually examine data, make decisions, resolve anomalies, and file reports. Hubble Space Telescope (HST) is a prime example of this description. Technological advancements in hardware and software over the last decade have yielded increases in productivity and operational efficiency, which result in lower cost. The re-engineering effort of HST, which has recently concluded, utilized emerging technology to reduce cost and increase productivity. New missions, of which NASA's Transition Region and Coronal Explorer Satellite (TRACE) is an example, have benefited from recent technological advancements and are more cost-effective than when HST was first launched. During its launch (1998) and early orbit phase, the TRACE Flight Operations Team (FOT) employed continually staffed operations. Yet once the mission entered its nominal phase, the FOT reduced their staffing to standard weekday business hours. Operations were still conducted at night and during the weekends, but these operations occurred autonomously without compromising their high standards for data collections. For the HST, which launched in 1990, reduced cost operations will employ a different operational concept, when the spacecraft enters its low-cost phase after its final servicing mission in 2004. Primarily due to the spacecraft"s design, the HST Project has determined that single-shift operations will introduce unacceptable risks for the amount of dollars saved. More importantly, significant cost-savings can still be achieved by changing the operational concept for the FOT, while still maintaining round-the-clock staffing. It"s important to note that the low-cost solutions obtained for one satellite may not be applicable for other satellites. This paper will contrast the differences between

360° tunable microwave phase shifter based on silicon-on-insulator dual-microring resonator

DEFF Research Database (Denmark)

Pu, Minhao; Xue, Weiqi; Liu, Liu

2010-01-01

We demonstrate tunable microwave phase shifters based on electrically tunable silicon-on-insulator dual-microring resonators. A quasi-linear phase shift of 360° with ~2dB radio frequency power variation at a microwave frequency of 40GHz is obtained......We demonstrate tunable microwave phase shifters based on electrically tunable silicon-on-insulator dual-microring resonators. A quasi-linear phase shift of 360° with ~2dB radio frequency power variation at a microwave frequency of 40GHz is obtained...

Low Cost Al-Si Casting Alloy As In-Situ Composite for High Temperature Applications

Science.gov (United States)

Lee, Jonathan A.

2000-01-01

A new aluminum-silicon (Al-Si) alloy has been successfully developed at NASA- Marshall Space Flight Center (MSFC) that has significant improvement in tensile and fatigue strength at elevated temperatures (500 F-700 F). The alloy offers a number of benefits such as light weight, high hardness, low thermal expansion and high surface wear resistance. In hypereutectic form, this alloy is considered as an in-situ Al-Si composite with tensile strength of about 90% higher than the auto industry 390 alloy at 600 F. This composite is very economically produced by using either conventional permanent steel molds or die casting. The projected material cost is less than $0.90 per pound, and automotive components such as pistons can be cast for high production rate using conventional casting techniques with a low and fully accounted cost. Key Words: Metal matrix composites, In-situ composite, aluminum-silicon alloy, hypereutectic alloy, permanent mold casting, die casting.

Crystalline Silicon Interconnected Strips (XIS). Introduction to a New, Integrated Device and Module Concept

Energy Technology Data Exchange (ETDEWEB)

Van Roosmalen, J.; Bronsveld, P.; Mewe, A.; Janssen, G.; Stodolny, M.; Cobussen-Pool, E.; Bennett, I.; Weeber, A.; Geerligs, B. [ECN Solar Energy, P.O. Box 1, NL-1755 ZG, Petten (Netherlands)

2012-06-15

A new device concept for high efficiency, low cost, wafer based silicon solar cells is introduced. To significantly lower the costs of Si photovoltaics, high efficiencies and large reductions of metals and silicon costs are required. To enable this, the device architecture was adapted into low current devices by applying thin silicon strips, to which a special high efficiency back-contact heterojunction cell design was applied. Standard industrial production processes can be used for our fully integrated cell and module design, with a cost reduction potential below 0.5 euro/Wp. First devices have been realized demonstrating the principle of a series connected back contact hybrid silicon heterojunction module concept.

Diamond to β-Sn phase transition of silicon under hydrostatic and nonhydrostatic compressions

International Nuclear Information System (INIS)

Durandurdu, Murat

2008-01-01

We have carried out constant pressure ab initio simulations to study the pressure-induced phase transition of silicon. The diamond to β-Sn phase change under hydrostatic pressure is successfully observed in the simulation. The transformation is based on a fourfold coordinated tetragonal intermediate state having the space group I4 1 /amd. The energy barrier for the transformation is calculated to be about 0.35 eV/atom. Additionally, we investigate the influence of nonhydrostatic compressions on the phase transition of silicon and find that up to 20% stress deviations, silicon converts to a β-Sn structure with a reduced transition pressure. The triaxial compressions cause more reduction in the transition pressure than the uniaxial compressions. The transformation mechanism is practically identical under both hydrostatic and nonhydrostatic conditions

Effect of Silicon Nanowire on Crystalline Silicon Solar Cell Characteristics

OpenAIRE

Zahra Ostadmahmoodi Do; Tahereh Fanaei Sheikholeslami; Hassan Azarkish

2016-01-01

Nanowires (NWs) are recently used in several sensor or actuator devices to improve their ordered characteristics. Silicon nanowire (Si NW) is one of the most attractive one-dimensional nanostructures semiconductors because of its unique electrical and optical properties. In this paper, silicon nanowire (Si NW), is synthesized and characterized for application in photovoltaic device. Si NWs are prepared using wet chemical etching method which is commonly used as a simple and low cost method fo...

Silicon nanowire hybrid photovoltaics

KAUST Repository

Garnett, Erik C.

2010-06-01

Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.

Silicon nanowire hybrid photovoltaics

KAUST Repository

Garnett, Erik C.; Peters, Craig; Brongersma, Mark; Cui, Yi; McGehee, Mike

2010-01-01

Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.

Liquid-liquid phase transition in Stillinger-Weber silicon

International Nuclear Information System (INIS)

Beaucage, Philippe; Mousseau, Normand

2005-01-01

It was recently demonstrated that Stillinger-Weber silicon undergoes a liquid-liquid first-order phase transition deep into the supercooled region (Sastry and Angell 2003 Nat. Mater. 2 739). Here we study the effects of perturbations on this phase transition. We show that the order of the liquid-liquid transition changes with negative pressure. We also find that the liquid-liquid transition disappears when the three-body term of the potential is strengthened by as little as 5%. This implies that the details of the potential could affect strongly the nature and even the existence of the liquid-liquid phase

Probing the phase composition of silicon films in situ by etch product detection

International Nuclear Information System (INIS)

Dingemans, G.; Donker, M. N. van den; Gordijn, A.; Kessels, W. M. M.; Sanden, M. C. M. van de

2007-01-01

Exploiting the higher etch probability for amorphous silicon relative to crystalline silicon, the transiently evolving phase composition of silicon films in the microcrystalline growth regime was probed in situ by monitoring the etch product (SiH 4 ) gas density during a short H 2 plasma treatment step. Etch product detection took place by the easy-to-implement techniques of optical emission spectroscopy and infrared absorption spectroscopy. The phase composition of the films was probed as a function of the SiH 4 concentration during deposition and as a function of the film thickness. The in situ results were corroborated by Raman spectroscopy and solar cell analysis

High Efficiency, Low Cost Scintillators for PET

International Nuclear Information System (INIS)

Kanai Shah

2007-01-01

Inorganic scintillation detectors coupled to PMTs are an important element of medical imaging applications such as positron emission tomography (PET). Performance as well as cost of these systems is limited by the properties of the scintillation detectors available at present. The Phase I project was aimed at demonstrating the feasibility of producing high performance scintillators using a low cost fabrication approach. Samples of these scintillators were produced and their performance was evaluated. Overall, the Phase I effort was very successful. The Phase II project will be aimed at advancing the new scintillation technology for PET. Large samples of the new scintillators will be produced and their performance will be evaluated. PET modules based on the new scintillators will also be built and characterized

Material Properties of Laser-Welded Thin Silicon Foils

Directory of Open Access Journals (Sweden)

M. T. Hessmann

2013-01-01

Full Text Available An extended monocrystalline silicon base foil offers a great opportunity to combine low-cost production with high efficiency silicon solar cells on a large scale. By overcoming the area restriction of ingot-based monocrystalline silicon wafer production, costs could be decreased to thin film solar cell range. The extended monocrystalline silicon base foil consists of several individual thin silicon wafers which are welded together. A comparison of three different approaches to weld 50 μm thin silicon foils is investigated here: (1 laser spot welding with low constant feed speed, (2 laser line welding, and (3 keyhole welding. Cross-sections are prepared and analyzed by electron backscatter diffraction (EBSD to reveal changes in the crystal structure at the welding side after laser irradiation. The treatment leads to the appearance of new grains and boundaries. The induced internal stress, using the three different laser welding processes, was investigated by micro-Raman analysis. We conclude that the keyhole welding process is the most favorable to produce thin silicon foils.

A Low Cost, Hybrid Approach to Data Mining, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — The proposed effort will combine a low cost physical modeling approach with inductive, data-centered modeling in an aerosopace relevant context to demonstrate...

Analytical and experimental evaluation of joining silicon carbide to silicon carbide and silicon nitride to silicon nitride for advanced heat engine applications Phase 2. Final report

Energy Technology Data Exchange (ETDEWEB)

Sundberg, G.J.; Vartabedian, A.M.; Wade, J.A.; White, C.S. [Norton Co., Northboro, MA (United States). Advanced Ceramics Div.

1994-10-01

The purpose of joining, Phase 2 was to develop joining technologies for HIP`ed Si{sub 3}N{sub 4} with 4wt% Y{sub 2}O{sub 3} (NCX-5101) and for a siliconized SiC (NT230) for various geometries including: butt joins, curved joins and shaft to disk joins. In addition, more extensive mechanical characterization of silicon nitride joins to enhance the predictive capabilities of the analytical/numerical models for structural components in advanced heat engines was provided. Mechanical evaluation were performed by: flexure strength at 22 C and 1,370 C, stress rupture at 1,370 C, high temperature creep, 22 C tensile testing and spin tests. While the silicon nitride joins were produced with sufficient integrity for many applications, the lower join strength would limit its use in the more severe structural applications. Thus, the silicon carbide join quality was deemed unsatisfactory to advance to more complex, curved geometries. The silicon carbide joining methods covered within this contract, although not entirely successful, have emphasized the need to focus future efforts upon ways to obtain a homogeneous, well sintered parent/join interface prior to siliconization. In conclusion, the improved definition of the silicon carbide joining problem obtained by efforts during this contract have provided avenues for future work that could successfully obtain heat engine quality joins.

Silicon processing for photovoltaics II

CERN Document Server

Khattak, CP

2012-01-01

The processing of semiconductor silicon for manufacturing low cost photovoltaic products has been a field of increasing activity over the past decade and a number of papers have been published in the technical literature. This volume presents comprehensive, in-depth reviews on some of the key technologies developed for processing silicon for photovoltaic applications. It is complementary to Volume 5 in this series and together they provide the only collection of reviews in silicon photovoltaics available.The volume contains papers on: the effect of introducing grain boundaries in silicon; the

Controlling the optical properties of monocrystalline 3C-SiC heteroepitaxially grown on silicon at low temperatures

Science.gov (United States)

Colston, Gerard; Myronov, Maksym

2017-11-01

Cubic silicon carbide (3C-SiC) offers an alternative wide bandgap semiconductor to conventional materials such as hexagonal silicon carbide (4H-SiC) or gallium nitride (GaN) for the detection of UV light and can offer a closely lattice matched virtual substrate for subsequent GaN heteroepitaxy. As 3C-SiC can be heteroepitaxially grown on silicon (Si) substrates its optical properties can be manipulated by controlling the thickness and doping concentrations. The optical properties of 3C-SiC epilayers have been characterized by measuring the transmission of light through suspended membranes. Decreasing the thickness of the 3C-SiC epilayers is shown to shift the absorbance edge to lower wavelengths, a result of the indirect bandgap nature of silicon carbide. This property, among others, can be exploited to fabricate very low-cost, tuneable 3C-SiC based UV photodetectors. This study investigates the effect of thickness and doping concentration on the optical properties of 3C-SiC epilayers grown at low temperatures by a standard Si based growth process. The results demonstrate the potential photonic applications of 3C-SiC and its heterogeneous integration into the Si industry.

Low cost sol–gel derived SiC–SiO{sub 2} nanocomposite as anti reflection layer for enhanced performance of crystalline silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Jannat, Azmira [School of Semiconductor and Chemical Engineering, Solar Energy Research Center, Chonbuk National University, Jeonju, Jeonbuk 54896 (Korea, Republic of); Solar Energy Engineering, Chonbuk National University, Jeonju, Jeonbuk 54896 (Korea, Republic of); Lee, Woojin [School of Semiconductor and Chemical Engineering, Solar Energy Research Center, Chonbuk National University, Jeonju, Jeonbuk 54896 (Korea, Republic of); Akhtar, M. Shaheer, E-mail: shaheerakhtar@jbnu.ac.kr [School of Semiconductor and Chemical Engineering, Solar Energy Research Center, Chonbuk National University, Jeonju, Jeonbuk 54896 (Korea, Republic of); New & Renewable Energy Materials Development Center (NewREC), Chonbuk National University, Jeonbuk (Korea, Republic of); Li, Zhen Yu [School of Semiconductor and Chemical Engineering, Solar Energy Research Center, Chonbuk National University, Jeonju, Jeonbuk 54896 (Korea, Republic of); Yang, O.-Bong, E-mail: obyang@jbnu.ac.kr [School of Semiconductor and Chemical Engineering, Solar Energy Research Center, Chonbuk National University, Jeonju, Jeonbuk 54896 (Korea, Republic of); New & Renewable Energy Materials Development Center (NewREC), Chonbuk National University, Jeonbuk (Korea, Republic of)

2016-04-30

Graphical abstract: - Highlights: • Sol–gel derived SiC–SiO{sub 2} nanocomposite was prepared. • It effectively coated as AR layer on p-type Si-wafer. • SiC–SiO{sub 2} layer on Si solar cells exhibited relatively low reflectance of 7.08%. • Fabricated Si solar cell attained highly comparable performance of 16.99% to commercial device. - Abstract: This paper describes the preparation, characterizations and the antireflection (AR) coating application in crystalline silicon solar cells of sol–gel derived SiC–SiO{sub 2} nanocomposite. The prepared SiC–SiO{sub 2} nanocomposite was effectively applied as AR layer on p-type Si-wafer via two step processes, where the sol–gel of precursor solution was first coated on p-type Si-wafer using spin coating at 2000 rpm and then subjected to annealing at 450 °C for 1 h. The crystalline, and structural observations revealed the existence of SiC and SiO{sub 2} phases, which noticeably confirmed the formation of SiC–SiO{sub 2} nanocomposite. The SiC–SiO{sub 2} layer on Si solar cells was found to be an excellent AR coating, exhibiting the low reflectance of 7.08% at wavelengths ranging from 400 to 1000 nm. The fabricated crystalline Si solar cell with SiC–SiO{sub 2} nanocomposite AR coating showed comparable power conversion efficiency of 16.99% to the conventional Si{sub x}N{sub x} AR coated Si solar cell. New and effective sol–gel derived SiC–SiO{sub 2} AR layer would offer a promising technique to produce high performance Si solar cells with low-cost.

Continuous Czochralski growth: Silicon sheet growth development of the large area sheet task of the low cost silicon solar array project

Science.gov (United States)

Johnson, C. M.

1980-12-01

The growth of 100 kg of silicon single crystal material, ten cm in diameter or greater, and 150 kg of silicon single crystal material 15 cm or greater utilizing one common silicon container material (one crucible) is investigated. A crystal grower that is recharged with a new supply of polysilicon material while still under vacuum and at temperatures above the melting point of silicon is developed. It accepts large polysilicon charges up to 30 kg, grows large crystal ingots (to 15 cm diameter and 25 kg in weight), and holds polysilicon material for recharging (rod or lump) while, at the same time, growing crystal ingots. Special equipment is designed to recharge polysilicon rods, recharge polysilicon lumps, and handle and store large, hot silicon crystal ingots. Many continuous crystal growth runs were performed lasting as long as 109 hours and producing as many as ten crystal ingots, 15 cm with weights progressing to 27 kg.

Low cost Czochralski crystal growing technology. Near implementation of the flat plate photovoltaic cost reduction of the low cost solar array project

Science.gov (United States)

Roberts, E. G.

1980-01-01

Equipment developed for the manufacture of over 100 kg of silicon ingot from one crucible by rechanging from another crucible is described. Attempts were made to eliminate the cost of raising the furnace temperature to 250 C above the melting point of silicon by using an RF coil to melt polycrystalline silicon rod as a means of rechanging the crucible. Microprocessor control of the straight growth process was developed and domonstrated for both 4 inch and 6 inch diameter. Both meltdown and melt stabilization processes were achieved using operator prompting through the microprocessor. The use of the RF work coil in poly rod melting as a heat sink in the accelerated growth process was unsuccessful. The total design concept for fabrication and interfacing of the total cold crucible system was completed.

High frequency three-phase PWM grid connected drive using silicon-carbide switches

DEFF Research Database (Denmark)

Kouchaki, Alireza; Pedersen, Jacob Lykke; Nymand, Morten

2016-01-01

This paper presents controller design procedure for a fully silicon-carbide (SiC) based three-phase grid-connected PWM drive. The influence of the feedforward compensation for the presented setup is studied and the transfer function of the system with feedforward is derived and compared with the ......This paper presents controller design procedure for a fully silicon-carbide (SiC) based three-phase grid-connected PWM drive. The influence of the feedforward compensation for the presented setup is studied and the transfer function of the system with feedforward is derived and compared...

Silicon photonics for telecommunications and biomedicine

CERN Document Server

Fathpour, Sasan

2011-01-01

Given silicon's versatile material properties, use of low-cost silicon photonics continues to move beyond light-speed data transmission through fiber-optic cables and computer chips. Its application has also evolved from the device to the integrated-system level. A timely overview of this impressive growth, Silicon Photonics for Telecommunications and Biomedicine summarizes state-of-the-art developments in a wide range of areas, including optical communications, wireless technologies, and biomedical applications of silicon photonics. With contributions from world experts, this reference guides

Ultra High Brightness/Low Cost Fiber Coupled Packaging, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — High peak power, high efficiency, high reliability lightweight, low cost QCW laser diode pump modules with up to 1000W of QCW output become possible with nLight's...

Optical properties of phosphorescent nano-silicon electrochemically doped with terbium

Energy Technology Data Exchange (ETDEWEB)

Gelloz, Bernard [Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Aichi 464-8603 (Japan); Mentek, Romain; Koshida, Nobuyoshi [Tokyo University A and T, 2-24-16 Nakacho, Koganei, Tokyo 184-8588 (Japan)

2012-12-15

Hybrid thin films consisting of oxidized nano-silicon doped with terbium have been fabricated. Nano-silicon was formed by electrochemical etching of silicon wafers. Terbium was incorporated into nano-silicon pores by electrochemical deposition. Different oxidizing thermal treatments were applied to the films. The samples treated by high-pressure water vapor annealing (HWA) exhibited strong blue emission with a phosphorescent component, as previously reported by our group. The low temperature (260 C) HWA also led to strong emission from Tb{sup 3+} ions, whereas typical high temperature (900 C) treatment generally used to activate Tb{sup 3+} ions in silicon-based materials led to less luminescent samples. Spectroscopic and dynamic analyses suggest that terbium was incorporated as a separate oxide phase in the pores of the porous nano-silicon. The PL of the terbium phase and nano-silicon phase exhibit different temperature and excitation power dependences suggesting little optical or electronic interaction between the two phases. The luminescence of terbium is better activated at low temperature (260 C) than at high temperature (900 C). The hybrid material may find some applications in photonics, for instance as a display material. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Effect of Liquid Phase Content on Thermal Conductivity of Hot-Pressed Silicon Carbide Ceramics

International Nuclear Information System (INIS)

Lim, Kwang-Young; Jang, Hun; Lee, Seung-Jae; Kim, Young-Wook

2015-01-01

Silicon carbide (SiC) is a promising material for Particle-Based Accident Tolerant (PBAT) fuel, fission, and fusion power applications due to its superior physical and thermal properties such as low specific mass, low neutron cross section, excellent radiation stability, low coefficient of thermal expansion, and high thermal conductivity. Thermal conductivity of PBAT fuel is one of very important factors for plant safety and energy efficiency of nuclear reactors. In the present work, the effect of Y 2 O 3 -Sc 2 O 3 content on the microstructure and thermal properties of the hot pressed SiC ceramics have been investigated. Suppressing the β to α phase transformation of SiC ceramics is beneficial in increasing the thermal conductivity of liquid-phase sintered SiC ceramics. Developed SiC ceramics with Y 2 O 3 -Sc 2 O 3 additives are very useful for thermal conductivity on matrix material of the PBAT fuel

Photovoltaic technology, performance, manufacturing cost and markets

International Nuclear Information System (INIS)

Maycock, P.D.

1999-01-01

A comprehensive discussion of key aspects of photovoltaic energy conversion systems will provide the basis for forecasting PV module shipments from 1999 to 2010. Principal areas covered include: (1) Technology and Performance Status: The module efficiency and performance are described for commercial cell technologies including single crystal silicon, polycrystal silicon, ribbon silicon, film silicon on low cost substrate, amorphous silicon, copper indium diselenide, and cadmium telluride; (2) Manufacturing cost: 1999 costs for PV technologies in production (single crystal silicon, polycrystal silicon, and amorphous silicon) are developed. Manufacturing costs for 10--25 MW plants and 100 MW plants will be estimated; (3) The world PV market is summarized by region, top ten companies, and technology; and (4) Forecast of the World Market (seven market sectors) to 2010 will be presented. Key assumptions, price of modules, incentive programs, price of competing electricity generation will be detailed

Recent developments in low cost silicon solar cells for terrestrial applications. [sheet production methods

Science.gov (United States)

Leipold, M. H.

1978-01-01

A variety of techniques may be used for photovoltaic energy systems. Concentrated or not concentrated sunlight may be employed, and a number of materials can be used, including silicon, gallium arsenide, cadmium sulfide, and cadmium telluride. Most of the experience, however, has been obtained with silicon cells employed without sunlight concentration. An industrial base exists at present for producing solar cells at a price in the range from $15 to $30 per peak watt. A major federal program has the objective to reduce the price of power provided by silicon solar systems to approximately $1 per peak watt in the early 1980's and $0.50 per watt by 1986. The approaches considered for achieving this objective are discussed.

Two-phase flow instabilities in a silicon microchannels heat sink

International Nuclear Information System (INIS)

Bogojevic, D.; Sefiane, K.; Walton, A.J.; Lin, H.; Cummins, G.

2009-01-01

Two-phase flow instabilities are highly undesirable in microchannels-based heat sinks as they can lead to temperature oscillations with high amplitudes, premature critical heat flux and mechanical vibrations. This work is an experimental study of boiling instabilities in a microchannel silicon heat sink with 40 parallel rectangular microchannels, having a length of 15 mm and a hydraulic diameter of 194 μm. A series of experiments have been carried out to investigate pressure and temperature oscillations during the flow boiling instabilities under uniform heating, using water as a cooling liquid. Thin nickel film thermometers, integrated on the back side of a heat sink with microchannels, were used in order to obtain a better insight related to temperature fluctuations caused by two-phase flow instabilities. Flow regime maps are presented for two inlet water temperatures, showing stable and unstable flow regimes. It was observed that boiling leads to asymmetrical flow distribution within microchannels that result in high temperature non-uniformity and the simultaneously existence of different flow regimes along the transverse direction. Two types of two-phase flow instabilities with appreciable pressure and temperature fluctuations were observed, that depended on the heat to mass flux ratio and inlet water temperature. These were high amplitude/low frequency and low amplitude/high frequency instabilities. High speed camera imaging, performed simultaneously with pressure and temperature measurements, showed that inlet/outlet pressure and the temperature fluctuations existed due to alternation between liquid/two-phase/vapour flows. It was also determined that the inlet water subcooling condition affects the magnitudes of the temperature oscillations in two-phase flow instabilities and flow distribution within the microchannels.

1366 Project Silicon: Reclaiming US Silicon PV Leadership

Energy Technology Data Exchange (ETDEWEB)

Lorenz, Adam [1366 Technologies, Bedford, MA (United States)

2016-02-16

1366 Technologies’ Project Silicon addresses two of the major goals of the DOE’s PV Manufacturing Initiative Part 2 program: 1) How to reclaim a strong silicon PV manufacturing presence and; 2) How to lower the levelized cost of electricity (“LCOE”) for solar to $0.05-$0.07/kWh, enabling wide-scale U.S. market adoption. To achieve these two goals, US companies must commercialize disruptive, high-value technologies that are capable of rapid scaling, defensible from foreign competition, and suited for US manufacturing. These are the aims of 1366 Technologies Direct Wafer ™ process. The research conducted during Project Silicon led to the first industrial scaling of 1366’s Direct Wafer™ process – an innovative, US-friendly (efficient, low-labor content) manufacturing process that destroys the main cost barrier limiting silicon PV cost-reductions: the 35-year-old grand challenge of making quality wafers (40% of the cost of modules) without the cost and waste of sawing. The SunPath program made it possible for 1366 Technologies to build its demonstration factory, a key and critical step in the Company’s evolution. The demonstration factory allowed 1366 to build every step of the process flow at production size, eliminating potential risk and ensuring the success of the Company’s subsequent scaling for a 1 GW factory to be constructed in Western New York in 2016 and 2017. Moreover, the commercial viability of the Direct Wafer process and its resulting wafers were established as 1366 formed key strategic partnerships, gained entry into the $8B/year multi-Si wafer market, and installed modules featuring Direct Wafer products – the veritable proving grounds for the technology. The program also contributed to the development of three Generation 3 Direct Wafer furnaces. These furnaces are the platform for copying intelligently and preparing our supply chain – large-scale expansion will not require a bigger machine but more machines. SunPath filled the

Hybrid Integrated Platforms for Silicon Photonics

Science.gov (United States)

Liang, Di; Roelkens, Gunther; Baets, Roel; Bowers, John E.

2010-01-01

A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration of III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques is compared, one comprising only inorganic materials, the other technique using an organic bonding agent. Issues such as bonding process and mechanism, bonding strength, uniformity, wafer surface requirement, and stress distribution are studied in detail. The application in silicon photonics to realize high-performance active and passive photonic devices on low-cost silicon wafers is discussed. Hybrid integration is believed to be a promising technology in a variety of applications of silicon photonics.

Silicon hybrid integration

International Nuclear Information System (INIS)

Li Xianyao; Yuan Taonu; Shao Shiqian; Shi Zujun; Wang Yi; Yu Yude; Yu Jinzhong

2011-01-01

Recently,much attention has concentrated on silicon based photonic integrated circuits (PICs), which provide a cost-effective solution for high speed, wide bandwidth optical interconnection and optical communication.To integrate III-V compounds and germanium semiconductors on silicon substrates,at present there are two kinds of manufacturing methods, i.e., heteroepitaxy and bonding. Low-temperature wafer bonding which can overcome the high growth temperature, lattice mismatch,and incompatibility of thermal expansion coefficients during heteroepitaxy, has offered the possibility for large-scale heterogeneous integration. In this paper, several commonly used bonding methods are reviewed, and the future trends of low temperature wafer bonding envisaged. (authors)

Bench Scale Process for Low Cost CO₂ Capture Using a PhaseChanging Absorbent: Techno-Economic Analysis Topical Report

Energy Technology Data Exchange (ETDEWEB)

Miebach, Barbara [GE Global Research, Niskayuna, New York (United States); McDuffie, Dwayne [GE Global Research, Niskayuna, New York (United States); Spiry, Irina [GE Global Research, Niskayuna, New York (United States); Westendorf, Tiffany [GE Global Research, Niskayuna, New York (United States)

2017-01-27

The objective of this project is to design and build a bench-scale process for a novel phase-changing CO₂ capture solvent. The project will establish scalability and technical and economic feasibility of using a phase-changing CO₂ capture absorbent for post-combustion capture of CO₂ from coal-fired power plants with 90% capture efficiency and 95% CO₂ purity at a cost of $40/tonne of CO₂ captured by 2025 and a cost of <$10/tonne of CO₂ captured by 2035. This report presents system and economic analysis for a process that uses a phase changing aminosilicone solvent to remove CO₂ from pulverized coal (PC) power plant flue gas. The aminosilicone solvent is a pure 1,3-bis(3-aminopropyl)-1,1,3,3-tetramethyldisiloxane (GAP-0). Performance of the phase-changing aminosilicone technology is compared to that of a conventional carbon capture system using aqueous monoethanolamine (MEA). This analysis demonstrates that the aminosilicone process has significant advantages relative to an MEA-based system. The first-year CO₂ removal cost for the phase-changing CO₂ capture process is $52.1/tonne, compared to $66.4/tonne for the aqueous amine process. The phase-changing CO₂ capture process is less costly than MEA because of advantageous solvent properties that include higher working capacity, lower corrosivity, lower vapor pressure, and lower heat capacity. The phase-changing aminosilicone process has approximately 32% lower equipment capital cost compared to that of the aqueous amine process. However, this solvent is susceptible to thermal degradation at CSTR desorber operating temperatures, which could add as much as $88/tonne to the CO₂ capture cost associated with solvent makeup. Future work is focused on mitigating this critical risk by developing an advanced low-temperature desorber that can deliver comparable desorption performance and significantly reduced

Simple, Fast, and Cost-Effective Fabrication of Wafer-Scale Nanohole Arrays on Silicon for Antireflection

Directory of Open Access Journals (Sweden)

Di Di

2014-01-01

Full Text Available A simple, fast, and cost-effective method was developed in this paper for the high-throughput fabrication of nanohole arrays on silicon (Si, which is utilized for antireflection. Wafer-scale polystyrene (PS monolayer colloidal crystal was developed as templates by spin-coating method. Metallic shadow mask was prepared by lifting off the oxygen etched PS beads from the deposited chromium film. Nanohole arrays were fabricated by Si dry etching. A series of nanohole arrays were fabricated with the similar diameter but with different depth. It is found that the maximum depth of the Si-hole was determined by the diameter of the Cr-mask. The antireflection ability of these Si-hole arrays was investigated. The results show that the reflection decreases with the depth of the Si-hole. The deepest Si-hole arrays show the best antireflection ability (reflection 600 nm, which was about 28 percent of the nonpatterned silicon wafer’s reflection. The proposed method has the potential for high-throughput fabrication of patterned Si wafer, and the low reflectivity allows the application of these wafers in crystalline silicon solar cells.

A Low Mass On-Chip Readout Scheme for Double-Sided Silicon Strip Detectors

Energy Technology Data Exchange (ETDEWEB)

Irmler, C., E-mail: christian.irmler@oeaw.ac.at [HEPHY Vienna – Institute of High Energy Physics of the Austrian Academy of Sciences, Nikolsdorfer Gasse 18, A-1050 Vienna (Austria); Bergauer, T.; Frankenberger, A.; Friedl, M.; Gfall, I. [HEPHY Vienna – Institute of High Energy Physics of the Austrian Academy of Sciences, Nikolsdorfer Gasse 18, A-1050 Vienna (Austria); Higuchi, T. [University of Tokyo, Kavli Institute for Physics and Mathematics of the Universe, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8583 (Japan); Ishikawa, A. [Tohoku University, Department of Physics, Aoba Aramaki Aoba-ku, Sendai 980-8578 (Japan); Joo, C. [Seoul National University, High Energy Physics Laboratory, 25-107 Shinlim-dong, Kwanak-gu, Seoul 151-742 (Korea, Republic of); Kah, D.H.; Kang, K.H. [Kyungpook National University, Department of Physics, 1370 Sankyuk Dong, Buk Gu, Daegu 702-701 (Korea, Republic of); Rao, K.K. [Tata Institute of Fundamental Research, Experimental High Energy Physics Group, Homi Bhabha Road, Mumbai 400 005 (India); Kato, E. [Tohoku University, Department of Physics, Aoba Aramaki Aoba-ku, Sendai 980-8578 (Japan); Mohanty, G.B. [Tata Institute of Fundamental Research, Experimental High Energy Physics Group, Homi Bhabha Road, Mumbai 400 005 (India); Negishi, K. [Tohoku University, Department of Physics, Aoba Aramaki Aoba-ku, Sendai 980-8578 (Japan); Onuki, Y.; Shimizu, N. [University of Tokyo, Department of Physics, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan); Tsuboyama, T. [KEK, 1-1 Oho, Tsukuba, Ibaraki 305-0801 (Japan); Valentan, M. [HEPHY Vienna – Institute of High Energy Physics of the Austrian Academy of Sciences, Nikolsdorfer Gasse 18, A-1050 Vienna (Austria)

2013-12-21

B-factories like the KEKB in Tsukuba, Japan, operate at relatively low energies and thus require detectors with very low material budget in order to minimize multiple scattering. On the other hand, front-end chips with short shaping time like the APV25 have to be placed as close to the sensor strips as possible to reduce the capacitive load, which mainly determines the noise figure. In order to achieve both – minimal material budget and low noise – we developed a readout scheme for double-sided silicon detectors, where the APV25 chips are placed on a flexible circuit, which is glued onto the top side of the sensor. The bottom-side strips are connected by two flexible circuits, which are bent around the edge of the sensor. This so-called “Origami” design will be utilized to build the Silicon Vertex Detector of the Belle II experiment, which will consist of four layers made from ladders with up to five double-sided silicon strip sensors in a row. Each ladder will be supported by two ribs made of a carbon fiber and Airex foam core sandwich. The heat dissipated by the front-end chips will be removed by a highly efficient two-phase CO{sub 2} system. Thanks to the Origami concept, all APV25 chips are aligned in a row and thus can be cooled by a single thin cooling pipe per ladder. We present the concept and the assembly procedure of the Origami chip-on-sensor modules.

A Low Mass On-Chip Readout Scheme for Double-Sided Silicon Strip Detectors

International Nuclear Information System (INIS)

Irmler, C.; Bergauer, T.; Frankenberger, A.; Friedl, M.; Gfall, I.; Higuchi, T.; Ishikawa, A.; Joo, C.; Kah, D.H.; Kang, K.H.; Rao, K.K.; Kato, E.; Mohanty, G.B.; Negishi, K.; Onuki, Y.; Shimizu, N.; Tsuboyama, T.; Valentan, M.

2013-01-01

B-factories like the KEKB in Tsukuba, Japan, operate at relatively low energies and thus require detectors with very low material budget in order to minimize multiple scattering. On the other hand, front-end chips with short shaping time like the APV25 have to be placed as close to the sensor strips as possible to reduce the capacitive load, which mainly determines the noise figure. In order to achieve both – minimal material budget and low noise – we developed a readout scheme for double-sided silicon detectors, where the APV25 chips are placed on a flexible circuit, which is glued onto the top side of the sensor. The bottom-side strips are connected by two flexible circuits, which are bent around the edge of the sensor. This so-called “Origami” design will be utilized to build the Silicon Vertex Detector of the Belle II experiment, which will consist of four layers made from ladders with up to five double-sided silicon strip sensors in a row. Each ladder will be supported by two ribs made of a carbon fiber and Airex foam core sandwich. The heat dissipated by the front-end chips will be removed by a highly efficient two-phase CO 2 system. Thanks to the Origami concept, all APV25 chips are aligned in a row and thus can be cooled by a single thin cooling pipe per ladder. We present the concept and the assembly procedure of the Origami chip-on-sensor modules

Microstructure and initial growth characteristics of the low temperature microcrystalline silicon films on silicon nitride surface

International Nuclear Information System (INIS)

Park, Young-Bae; Rhee, Shi-Woo

2001-01-01

Microstructure and initial growth characteristics of the hydrogenated microcrystalline Si (μc-Si:H) films grown on hydrogenated amorphous silicon nitride (a-SiN x :H) surface at low temperature were investigated using high resolution transmission electron microscope and micro-Raman spectroscopy. With increasing the Si and Si - H contents in the SiN x :H surfaces, μc-Si crystallites, a few nanometers in size, were directly grown on amorphous nitride surfaces. It is believed that the crystallites were grown through the nucleation and phase transition from amorphous to crystal in a hydrogen-rich ambient of gas phase and growing surface. The crystallite growth characteristics on the dielectric surface were dependent on the stoichiometric (x=N/Si) ratio corresponding hydrogen bond configuration of the SiN x :H surface. Surface facetting and anisotropic growth of the Si crystallites resulted from the different growth rate on the different lattice planes of Si. No twins and stacking faults were observed in the (111) lattice planes of the Si crystallites surrounding the a-Si matrix. This atomic-scale structure was considered to be the characteristic of the low temperature crystallization of the μc-Si:H by the strain relaxation of crystallites in the a-Si:H matrix. [copyright] 2001 American Institute of Physics

Low temperature spalling of silicon: A crack propagation study

Energy Technology Data Exchange (ETDEWEB)

Bertoni, Mariana; Uberg Naerland, Tine; Stoddard, Nathan; Guimera Coll, Pablo

2017-06-08

Spalling is a promising kerfless method for cutting thin silicon wafers while doubling the yield of a silicon ingot. The main obstacle in this technology is the high total thickness variation of the spalled wafers, often as high as 100% of the wafer thickness. It has been suggested before that a strong correlation exists between low crack velocities and a smooth surface, but this correlation has never been shown during a spalling process in silicon. The reason lies in the challenge associated to measuring such velocities. In this contribution, we present a new approach to assess, in real time, the crack velocity as it propagates during a low temperature spalling process. Understanding the relationship between crack velocity and surface roughness during spalling can pave the way to attain full control on the surface quality of the spalled wafer.

Ultra-high-speed wavelength conversion in a silicon photonic chip

DEFF Research Database (Denmark)

Hu, Hao; Ji, Hua; Galili, Michael

2011-01-01

We have successfully demonstrated all-optical wavelength conversion of a 640-Gbit/s line-rate return-to-zero differential phase-shift keying (RZ-DPSK) signal based on low-power four wave mixing (FWM) in a silicon photonic chip with a switching energy of only ~110 fJ/bit. The waveguide dispersion...... of the silicon nanowire is nano-engineered to optimize phase matching for FWM and the switching power used for the signal processing is low enough to reduce nonlinear absorption from twophoton- absorption (TPA). These results demonstrate that high-speed wavelength conversion is achievable in silicon chips...

Widely tunable microwave phase shifter based on silicon-on-insulator dual-microring resonator

DEFF Research Database (Denmark)

Pu, Minhao; Liu, Liu; Xue, Weiqi

2010-01-01

We propose and demonstrate tunable microwave phase shifters based on electrically tunable silicon-on-insulator microring resonators. The phase-shifting range and the RF-power variation are analyzed. A maximum phase-shifting range of 0~600° is achieved by utilizing a dual-microring resonator...

Low-cost and versatile thermal test chip for power assemblies assessment and thermometric calibration purposes

International Nuclear Information System (INIS)

Jorda, X.; Perpina, X.; Vellvehi, M.; Madrid, F.; Flores, D.; Hidalgo, S.; Millan, J.

2011-01-01

Chips specifically designed for thermal tests such as the assessment of packages, are of main interest in Microelectronics. Nevertheless, these test dies are required in relatively low quantities and their price is a limiting factor. This work describes a low-cost thermal test chip, specifically developed for the needs of power electronics. It is based on a poly-silicon heating resistor and a decoupled Pt temperature sensing resistor on the top, allowing to dissipate more than 60 W (170 W/cm 2 ) and reaching temperatures up to 200 o C. Its simple structure allows an easy simulation and modeling. These features have been taken in profit for packaging materials assessment, calibration of temperature measurement apparatus and methods, and validation of thermal models and simulations. - Highlights: → We describe a low-cost thermal test chip developed for power electronics applications. → It integrates a poly-silicon heating resistor and a Pt temperature sensing resistor on the top. → It can dissipate up to 200 W/cm 2 and work up to 200 o C. → It has been used for thermal resistance and conductivity measurement of substrates. → It allowed also the calibration of advanced thermometric equipments.

Experimental Study of Silicon Oil Effect on Two-Phase Closed Thermosyphon

Energy Technology Data Exchange (ETDEWEB)

Jung, Jun Yeong; Jeong, Yong Hoon [KAIST, Daejeon (Korea, Republic of)

2015-05-15

Two-phase closed thermosyphon (TPCT) is vertically oriented wickless heat pipe that has working fluid in the interior. The TPCT transports a large amount of heat from evaporator to condenser by phase change of working fluid, and the working fluid passively returns to evaporator by gravity. Due to these advantages of the TPCT, the TPCT is considered as method of PRHR (Passive Residual Heat Removal) system in nuclear system. Parametric studies have done to investigate the heat transfer characteristics of the TPCT. Different working fluids such as water, ethanol, methanol and acetone were used at various filling ratios and at different operating temperatures to find maximum heat transport capabilities of TPCT. Effect of heat transfer rate, filling ratio and aspect ratio were investigated. Inclined angle effect was investigated at several filling ratios and working fluids. This study is interested in silicon oil effect on the TPCT. To carry out the experiment, experimental apparatus is designed and manufactured. In design process, the TPCT operation limit is considered This study is interested in silicon oil effect on the TPCT. Experiments were carried out at three oil weight percent with three input power. Effect of oil on the TPCT is evaluated by inner wall temperature distribution and thermal resistance. In this study, silicon oil effect on TPCT was investigated. The TPCT was operated with several oil weight percent and input power. From experiment, overall, the silicon oil reduced evaporator thermal performance, but enhanced condenser thermal performance. However, the TPCT total thermal performance was reduced by 100 c St silicon oil.

Experimental Study of Silicon Oil Effect on Two-Phase Closed Thermosyphon

International Nuclear Information System (INIS)

Jung, Jun Yeong; Jeong, Yong Hoon

2015-01-01

Two-phase closed thermosyphon (TPCT) is vertically oriented wickless heat pipe that has working fluid in the interior. The TPCT transports a large amount of heat from evaporator to condenser by phase change of working fluid, and the working fluid passively returns to evaporator by gravity. Due to these advantages of the TPCT, the TPCT is considered as method of PRHR (Passive Residual Heat Removal) system in nuclear system. Parametric studies have done to investigate the heat transfer characteristics of the TPCT. Different working fluids such as water, ethanol, methanol and acetone were used at various filling ratios and at different operating temperatures to find maximum heat transport capabilities of TPCT. Effect of heat transfer rate, filling ratio and aspect ratio were investigated. Inclined angle effect was investigated at several filling ratios and working fluids. This study is interested in silicon oil effect on the TPCT. To carry out the experiment, experimental apparatus is designed and manufactured. In design process, the TPCT operation limit is considered This study is interested in silicon oil effect on the TPCT. Experiments were carried out at three oil weight percent with three input power. Effect of oil on the TPCT is evaluated by inner wall temperature distribution and thermal resistance. In this study, silicon oil effect on TPCT was investigated. The TPCT was operated with several oil weight percent and input power. From experiment, overall, the silicon oil reduced evaporator thermal performance, but enhanced condenser thermal performance. However, the TPCT total thermal performance was reduced by 100 c St silicon oil

Hybrid Integrated Platforms for Silicon Photonics

Directory of Open Access Journals (Sweden)

John E. Bowers

2010-03-01

Full Text Available A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration of III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques is compared, one comprising only inorganic materials, the other technique using an organic bonding agent. Issues such as bonding process and mechanism, bonding strength, uniformity, wafer surface requirement, and stress distribution are studied in detail. The application in silicon photonics to realize high-performance active and passive photonic devices on low-cost silicon wafers is discussed. Hybrid integration is believed to be a promising technology in a variety of applications of silicon photonics.

A low-cost, high-yield fabrication method for producing optimized biomimetic dry adhesives

International Nuclear Information System (INIS)

Sameoto, D; Menon, C

2009-01-01

We present a low-cost, large-scale method of fabricating biomimetic dry adhesives. This process is useful because it uses all photosensitive polymers with minimum fabrication costs or complexity to produce molds for silicone-based dry adhesives. A thick-film lift-off process is used to define molds using AZ 9260 photoresist, with a slow acting, deep UV sensitive material, PMGI, used as both an adhesion promoter for the AZ 9260 photoresist and as an undercutting material to produce mushroom-shaped fibers. The benefits to this process are ease of fabrication, wide range of potential layer thicknesses, no special surface treatment requirements to demold silicone adhesives and easy stripping of the full mold if process failure does occur. Sylgard® 184 silicone is used to cast full sheets of biomimetic dry adhesives off 4'' diameter wafers, and different fiber geometries are tested for normal adhesion properties. Additionally, failure modes of the adhesive during fabrication are noted and strategies for avoiding these failures are discussed. We use this fabrication method to produce different fiber geometries with varying cap diameters and test them for normal adhesion strengths. The results indicate that the cap diameters relative to post diameters for mushroom-shaped fibers dominate the adhesion properties

Pulsed laser ablation of silicon with low laser fluence in a low-pressure of ammonia ambient

International Nuclear Information System (INIS)

Choo, Cheow-Keong; Tohara, Makoto; Enomoto, Kazuhiro; Tanaka, Katsumi

2004-01-01

Silicon was ablated by 532 nm wavelength of Nd:YAG laser in ammonia gas ambient. The influence of laser fluence and gas ambient pressures between 1.33x10 1 to 1.33x10 -5 Pa on the deposited compound was studied by in situ X-ray photoelectron spectroscopy and transmission Fourier transform infrared spectroscopy techniques. The results indicate that the deposited compound is composed of nonstoichiometric silicon nitride (SiN x , x=0-0.84). It has been shown that the composition of nitrogen to silicon is sensitive to the laser fluence; it increases with decreasing laser fluence. However, the ammonia gas ambient in these low pressures range had no influence on the composition of the deposited compound. The reaction of the ablated silicon with low-pressure ambient ammonia is proposed to be occurred on the substrate

Near net shape, low cost ceramic valves for advanced engine applications

Energy Technology Data Exchange (ETDEWEB)

Pidria, M.; Merlone, E.; Parussa, F. [Fiat Research Centre, Orbassano (Italy); Handelsman, J.; Gorodnev, A. [Ceracom Materials Ltd., Yavneh (Israel)

2003-07-01

Future gasoline and diesel engines with electro-hydraulic or electro-mechanical valve control systems require the development of lighter valves to achieve the best results in terms of increased performances, lower fuel consumption and overall efficiency. Ceramic materials can adequately satisfy the required mechanical and thermal properties, nevertheless they still lack as far as manufacturing costs are concerned. Objective of the work was the development of a low-cost forming and sintering process, to produce near-net shape ceramic valves thus requiring very low finishing operations and significantly minimizing material waste. Between available technical ceramic materials, silicon nitride has been chosen to replace conventional steels and Ni-based alloys for the exhaust valves application. The work was then devoted to (i) the selection of the best starting materials composition, taking into account the requirements of a cost effective and high volume production, (ii) the development of an innovative pressure-injection molding process to produce near-net shape parts via a thermosetting feedstock and (iii) the optimization of a proper pressure-less sintering route to obtain cost-competitive, real scale components with adequate final density and mechanical properties. (orig.)

Experimental Implementation of a Low-Cost Single Phase Five-Level Inverter for Autonomous PV System Applications Without Batteries

OpenAIRE

Nouaiti, Ayoub; Saad, Abdallah; Mesbahi, Abdelouahed; Khafallah, Mohamed

2018-01-01

This paper presents the design and the implementation of a low-cost single phase five-level inverter for photovoltaic applications. The proposed multilevel inverter is composed of a simple boost converter, a switched-capacitor converter, and an H-bridge converter. An efficient control method which associates a closed-loop regulation method with a simple maximum power point tracking (MPPT) method is applied in order to allow the proposed multilevel inverter to transfer power energy from solar ...

On the potential of Hg-Photo-CVD process for the low temperature growth of nano-crystalline silicon (Topical review)

International Nuclear Information System (INIS)

Barhdadi, A.

2005-08-01

Mercury-Sensitized Photo-Assisted Chemical Vapor Deposition (Hg-Photo-CVD) technique opens new possibilities for reducing thin film growth temperature and producing novel semiconductor materials suitable for the future generation of high efficiency thin film solar cells onto low cost flexible plastic substrates. This paper provides an overview of this technique, with the emphasis on its potential in low temperature elaboration of nano-crystalline silicon for the development of thin films photovoltaic technology. (author)

Cluster-assisted nucleation of silicon phase in hypoeutectic Al–Si alloy with further inoculation

International Nuclear Information System (INIS)

Zhang, Yong; Zheng, Hongliang; Liu, Yue; Shi, Lei; Xu, Rongfu; Tian, Xuelei

2014-01-01

The paper discusses the responses of eutectic silicon and eutectic cells in Al–10Si alloy upon inoculation with an Al–10Si–2Fe master alloy. The further inoculation hardly destroys the modification effect of Sr but significantly refines the eutectic cells in Sr-modified samples, while in unmodified samples, it stimulates the occurrences of polyhedral silicon particles and divorced eutectic. Thermal analysis, scanning electron microscopy, (high-resolution) transmission electron microscopy and scanning and transmission electron microscopy have been used to elucidate the underlying mechanism. A cluster-assisted nucleation mechanism responsible for the enhanced nucleation of silicon phase upon inoculation is proposed. Icosahedral (AlFeSi) clusters are speculated to evolve from the added Al–10Si–2Fe master alloy in Al–10Si melt, around which aggregations of silicon atoms form. Through a series of structural evolutions, these clusters transform into precursors of a silicon crystal. The subsequent formation of silicon particles is achieved by the agglomerations and attachments of these precursors and individual silicon atoms. This hypothesis is further consolidated by the increased characteristic temperatures of eutectic and the anomalous appearance of a high density of nanoscale particles, as well as the abnormal disappearance of Sr-induced twins in further inoculated silicon particles. The increased characteristic temperatures are strong indications of the enhanced nucleation of the silicon phase. The high density of nanoscale particles with an indeterminate crystal structure are the survivors of these precursors. In an Sr-modified and further inoculated sample, the formation of Sr-induced twins is consequently inhibited due to the participation of these precursors during the growth of silicon particles. Furthermore, based on the proposed nucleation mechanism, the dependence of eutectic cell size on Sr level is elucidated in detail

Low temperature surface passivation of crystalline silicon and its application to interdigitated back contact silicon heterojunction (ibc-shj) solar cell

Science.gov (United States)

Shu, Zhan

With the absence of shading loss together with improved quality of surface passivation introduced by low temperature processed amorphous silicon crystalline silicon (a-Si:H/c-Si) heterojunction, the interdigitated back contact silicon heterojunction (IBC-SHJ) solar cell exhibits a potential for higher conversion efficiency and lower cost than a traditional front contact diffused junction solar cell. In such solar cells, the front surface passivation is of great importance to achieve both high open-circuit voltage (Voc) and short-circuit current (Jsc). Therefore, the motivation of this work is to develop a low temperature processed structure for the front surface passivation of IBC-SHJ solar cells, which must have an excellent and stable passivation quality as well as a good anti-reflection property. Four different thin film materials/structures were studied and evaluated for this purpose, namely: amorphous silicon nitride (a-SiNx:H), thick amorphous silicon film (a-Si:H), amorphous silicon/silicon nitride/silicon carbide (a-Si:H/a-SiN x:H/a-SiC:H) stack structure with an ultra-thin a-Si:H layer, and zinc sulfide (ZnS). It was demonstrated that the a-Si:H/a-SiNx:H/a-SiC:H stack surpasses other candidates due to both of its excellent surface passivation quality (SRVSi surface is found to be resulted from (i) field effect passivation due to the positive fixed charge (Q fix~1x1011 cm-2 with 5 nm a-Si:H layer) in a-SiNx:H as measured from capacitance-voltage technique, and (ii) reduced defect state density (mid-gap Dit~4x1010 cm-2eV-1) at a-Si:H/c-Si interface provided by a 5 nm thick a-Si:H layer, as characterized by conductance-frequency measurements. Paralleled with the experimental studies, a computer program was developed in this work based on the extended Shockley-Read-Hall (SRH) model of surface recombination. With the help of this program, the experimental injection level dependent SRV curves of the stack passivated c-Si samples were successfully reproduced and

Magneto-optical non-reciprocal devices in silicon photonics

Directory of Open Access Journals (Sweden)

Yuya Shoji

2014-01-01

Full Text Available Silicon waveguide optical non-reciprocal devices based on the magneto-optical effect are reviewed. The non-reciprocal phase shift caused by the first-order magneto-optical effect is effective in realizing optical non-reciprocal devices in silicon waveguide platforms. In a silicon-on-insulator waveguide, the low refractive index of the buried oxide layer enhances the magneto-optical phase shift, which reduces the device footprints. A surface activated direct bonding technique was developed to integrate a magneto-optical garnet crystal on the silicon waveguides. A silicon waveguide optical isolator based on the magneto-optical phase shift was demonstrated with an optical isolation of 30 dB and insertion loss of 13 dB at a wavelength of 1548 nm. Furthermore, a four port optical circulator was demonstrated with maximum isolations of 15.3 and 9.3 dB in cross and bar ports, respectively, at a wavelength of 1531 nm.

MESA - A new approach to low cost scientific spacecraft

Science.gov (United States)

Keyes, G. W.; Case, C. M.

1982-09-01

Today, the greatest obstacle to science and exploration in space is its cost. The present investigation is concerned with approaches for reducing this cost. Trends in the scientific spacecraft market are examined, and a description is presented for the MESA space platform concept. The cost drivers are considered, taking into account planning, technical aspects, and business factors. It is pointed out that the primary function of the MESA concept is to provide a satellite system at the lowest possible price. In order to reach this goal an attempt is made to benefit from all of the considered cost drivers. It is to be tried to work with the customer early in the mission analysis stage in order to assist in finding the right compromise between mission cost and return. A three phase contractual arrangement is recommended for MESA platforms. The phases are related to mission feasibility, specification definition, and design and development. Modular kit design promotes flexibility at low cost.

Flat-plate solar array project. Volume 3: Silicon sheet: Wafers and ribbons

Science.gov (United States)

Briglio, A.; Dumas, K.; Leipold, M.; Morrison, A.

1986-01-01

The primary objective of the Silicon Sheet Task of the Flat-Plate Solar Array (FSA) Project was the development of one or more low cost technologies for producing silicon sheet suitable for processing into cost-competitive solar cells. Silicon sheet refers to high purity crystalline silicon of size and thickness for fabrication into solar cells. Areas covered in the project were ingot growth and casting, wafering, ribbon growth, and other sheet technologies. The task made and fostered significant improvements in silicon sheet including processing of both ingot and ribbon technologies. An additional important outcome was the vastly improved understanding of the characteristics associated with high quality sheet, and the control of the parameters required for higher efficiency solar cells. Although significant sheet cost reductions were made, the technology advancements required to meet the task cost goals were not achieved.

Electronic transport in mixed-phase hydrogenated amorphous/nanocrystalline silicon thin films

Science.gov (United States)

Wienkes, Lee Raymond

Interest in mixed-phase silicon thin film materials, composed of an amorphous semiconductor matrix in which nanocrystalline inclusions are embedded, stems in part from potential technological applications, including photovoltaic and thin film transistor technologies. Conventional mixed-phase silicon films are produced in a single plasma reactor, where the conditions of the plasma must be precisely tuned, limiting the ability to adjust the film and nanoparticle parameters independently. The films presented in this thesis are deposited using a novel dual-plasma co-deposition approach in which the nanoparticles are produced separately in an upstream reactor and then injected into a secondary reactor where an amorphous silicon film is being grown. The degree of crystallinity and grain sizes of the films are evaluated using Raman spectroscopy and X-ray diffraction respectively. I describe detailed electronic measurements which reveal three distinct conduction mechanisms in n-type doped mixed-phase amorphous/nanocrystalline silicon thin films over a range of nanocrystallite concentrations and temperatures, covering the transition from fully amorphous to ~30% nanocrystalline. As the temperature is varied from 470 to 10 K, we observe activated conduction, multiphonon hopping (MPH) and Mott variable range hopping (VRH) as the nanocrystal content is increased. The transition from MPH to Mott-VRH hopping around 100K is ascribed to the freeze out of the phonon modes. A conduction model involving the parallel contributions of these three distinct conduction mechanisms is shown to describe both the conductivity and the reduced activation energy data to a high accuracy. Additional support is provided by measurements of thermal equilibration effects and noise spectroscopy, both done above room temperature (>300 K). This thesis provides a clear link between measurement and theory in these complex materials.

Establishing a cost model when estimating product cost in early design phases

OpenAIRE

Jeppsson, Johanna; Sjöberg, Jessica

2017-01-01

About 75% of the total product cost is determined in the early design phase, which means that the possibilities to affect costs are relatively small when the design phase is completed. For companies, it is therefore vital to conduct reliable cost estimates in the early design phase, when selecting between different design choices. When conducting a cost estimate there are many uncertainties. The aim with this study is therefore to explore how uncertainties regarding product cost can be consid...

A novel method to achieve selective emitter for silicon solar cell using low cost pattern-able a-Si thin films as the semi-transparent phosphorus diffusion barrier

International Nuclear Information System (INIS)

Chen, Da Ming; Liang, Zong Cun; Zhuang, Lin; Lin, Yang Huan; Shen, Hui

2012-01-01

Highlights: ► a-Si thin films as semitransparent phosphorus diffusion barriers for solar cell. ► a-Si thin films on silicon wafers were patterned by the alkaline solution. ► Selective emitter was formed with patterned a-Si as diffusion barrier for solar cell. -- Abstract: Selective emitter for silicon solar cell was realized by employing a-Si thin films as the semi-transparent diffusion barrier. The a-Si thin films with various thicknesses (∼10–40 nm) were deposited by the electron-beam evaporation technique. Emitters with sheet resistances from 37 to 145 Ω/□ were obtained via POCl 3 diffusion process. The thickness of the a-Si diffusion barrier was optimized to be 15 nm for selective emitter in our work. Homemade mask which can dissolve in ethanol was screen-printed on a-Si film to make pattern. The a-Si film was then patterned in KOH solution to form finger-like design. Selective emitter was obtainable with one-step diffusion with patterned a-Si film on. Combinations of sheet resistances for the high-/low-level doped regions of 39.8/112.1, 36.2/88.8, 35.4/73.9 were obtained. These combinations are suitable for screen-printed solar cells. This preparation method of selective emitter based on a-Si diffusion barrier is a promising approach for low cost industrial manufacturing.

Recent progress in low-temperature silicon detectors

International Nuclear Information System (INIS)

Abreu, M.; D'Ambrosio, N.; Bell, W.; Berglund, P.; Borchi, E.; Boer, W. de; Borer, K.; Bruzzi, M.; Buontempo, S.; Casagrande, L.; Chapuy, S.; Cindro, V.; Devine, S.R.H.; Dezillie, B.; Dierlamm, A.; Dimcovski, Z.; Eremin, V.; Esposito, A.; Granata, V.; Grigoriev, E.; Grohmann, S.; Hauler, F.; Heijne, E.; Heising, S.; Hempel, O.; Herzog, R.; Haerkoenen, J.; Janos, S.; Jungermann, L.; Konorov, I.; Li, Z.; Lourenco, C.; De Masi, R.; Menichelli, D.; Mikuz, M.; Niinikoski, T.O.; O'Shea, V.; Pagano, S.; Palmieri, V.G.; Paul, S.; Pretzl, K.; Smith, K.; Solano, B. Pere; Sousa, P.; Pirollo, S.; Rato Mendes, P.; Ruggiero, G.; Sonderegger, P.; Tuominen, E.; Verbitskaya, E.; Da Via, C.; Watts, S.; Wobst, E.; Zavrtanik, M.

2003-01-01

The CERN RD39 Collaboration studies the possibility to extend the detector lifetime in a hostile radiation environment by operating them at low temperatures. The outstanding illustration is the Lazarus effect, which showed a broad operational temperature range around 130 K for neutron irradiated silicon detectors

Investigation of Low-Cost Surface Processing Techniques for Large-Size Multicrystalline Silicon Solar Cells

OpenAIRE

Cheng, Yuang-Tung; Ho, Jyh-Jier; Lee, William J.; Tsai, Song-Yeu; Lu, Yung-An; Liou, Jia-Jhe; Chang, Shun-Hsyung; Wang, Kang L.

2010-01-01

The subject of the present work is to develop a simple and effective method of enhancing conversion efficiency in large-size solar cells using multicrystalline silicon (mc-Si) wafer. In this work, industrial-type mc-Si solar cells with area of 125×125 mm2 were acid etched to produce simultaneously POCl3 emitters and silicon nitride deposition by plasma-enhanced chemical vapor deposited (PECVD). The study of surface morphology and reflectivity of different mc-Si etched surfaces has also been d...

Design and fabrication of a low cost Darrieus vertical axis wing turbine system. Phase I. Technical report

Energy Technology Data Exchange (ETDEWEB)

None,

1979-06-22

The contract has two phases, a design phase and a fabrication and installation phase. Presented is the work completed in Phase I, the design phase. The Sandia 17 m was used as the background machine from which design information was drawn. By concentrating the modifications on an existing design, emphasis was focused on component cost reduction rather than selection of optimal configuration or operating modes. The resulting design is a stretched version of the Sandia 17 m preserving the same rotor diameter and many other good features, but in the meantime lighter in weight, larger in capacity, and anticipated to be more cost effective.

The difference of phase distributions in silicon after indentation with Berkovich and spherical indenters

International Nuclear Information System (INIS)

Zarudi, I.; Zhang, L.C.; Cheong, W.C.D.; Yu, T.X.

2005-01-01

This study analyses the microstructure of monocrystalline silicon after indentation with a Berkovich and spherical indenter. Transmission electron microscopy on cross section view samples was used to explore the detailed distributions of various phases in the subsurfaces of indented silicon. It was found that an increase of the P max would promote the growth of the crystalline R8/BC8 phase at the bottom of the deformation zone. Microcracks were always generated in the range of the P max studied. It was also found that the deformation zones formed by the Berkovich and spherical indenters have very different phase distribution characteristics. A molecular dynamics simulation and finite element analysis supported the experimental observations and suggested that the distribution of the crystalline phases in the transformation zone after indentation was highly stress-dependent

77 FR 35425 - Crystalline Silicon Photovoltaic Cells and Modules From China; Scheduling of the Final Phase of...

Science.gov (United States)

2012-06-13

... Silicon Photovoltaic Cells and Modules From China; Scheduling of the Final Phase of Countervailing Duty... silicon photovoltaic cells and modules, provided for in subheadings 8501.31.80, 8501.61.00, 8507.20.80... photovoltaic cells, and modules, laminates, and panels, consisting of crystalline silicon photovoltaic cells...

Low-loss slot waveguides with silicon (111 surfaces realized using anisotropic wet etching

Directory of Open Access Journals (Sweden)

Kapil Debnath

2016-11-01

Full Text Available We demonstrate low-loss slot waveguides on silicon-on-insulator (SOI platform. Waveguides oriented along the (11-2 direction on the Si (110 plane were first fabricated by a standard e-beam lithography and dry etching process. A TMAH based anisotropic wet etching technique was then used to remove any residual side wall roughness. Using this fabrication technique propagation loss as low as 3.7dB/cm was realized in silicon slot waveguide for wavelengths near 1550nm. We also realized low propagation loss of 1dB/cm for silicon strip waveguides.

Production of low-silicon molten iron from high-silica hematite using biochar

Institute of Scientific and Technical Information of China (English)

Hui-qing Tang∗; Xiu-feng Fu; Yan-qi Qin; Shi-yu Zhao; Qing-guo Xue

2017-01-01

A new method of utilizing high-silica hematite to produce low-silicon molten iron was proposed.In this method, FASTMELT, which comprised direct reduction and melt separation processes, was applied, with highly reactive biochar as the reductant in the direct reduction stage.The proposed method was ex-perimentally investigated and the results show that the method is feasible.In the direct reduction stage, ore-char briquette could achieve a metallization rate of 84%-88% and residual carbon of 0.27-0.89 mass% at temperature of 1 373 K, biochar mixing ratio of 0.8-0.9, and reduction time of 15 min.Some silica particles remained embedded in the iron phase after the reduction.In the melting separation stage, molten iron with a carbon content of 0.02-0.03 mass% and silicon content of 0.02-0.18 mass% could be obtained from the metallic briquettes under the above-mentioned conditions; the iron recovery rate was 83%-91% and impurities in the obtained metal were negligible.

Technical and cost advantages of silicon carbide telescopes for small-satellite imaging applications

Science.gov (United States)

Kasunic, Keith J.; Aikens, Dave; Szwabowski, Dean; Ragan, Chip; Tinker, Flemming

2017-09-01

Small satellites ("SmallSats") are a growing segment of the Earth imaging and remote sensing market. Designed to be relatively low cost and with performance tailored to specific end-use applications, they are driving changes in optical telescope assembly (OTA) requirements. OTAs implemented in silicon carbide (SiC) provide performance advantages for space applications but have been predominately limited to large programs. A new generation of lightweight and thermally-stable designs is becoming commercially available, expanding the application of SiC to small satellites. This paper reviews the cost and technical advantages of an OTA designed using SiC for small satellite platforms. Taking into account faceplate fabrication quilting and surface distortion after gravity release, an optimized open-back SiC design with a lightweighting of 70% for a 125-mm SmallSat-class primary mirror has an estimated mass area density of 2.8 kg/m2 and an aspect ratio of 40:1. In addition, the thermally-induced surface error of such optimized designs is estimated at λ/150 RMS per watt of absorbed power. Cost advantages of SiC include reductions in launch mass, thermal-management infrastructure, and manufacturing time based on allowable assembly tolerances.

Low temperature anodic bonding to silicon nitride

DEFF Research Database (Denmark)

Weichel, Steen; Reus, Roger De; Bouaidat, Salim

2000-01-01

Low-temperature anodic bonding to stoichiometric silicon nitride surfaces has been performed in the temperature range from 3508C to 4008C. It is shown that the bonding is improved considerably if the nitride surfaces are either oxidized or exposed to an oxygen plasma prior to the bonding. Both bu...

Improved Optics in Monolithic Perovskite/Silicon Tandem Solar Cells with a Nanocrystalline Silicon Recombination Junction

KAUST Repository

Sahli, Florent

2017-10-09

Perovskite/silicon tandem solar cells are increasingly recognized as promi­sing candidates for next-generation photovoltaics with performance beyond the single-junction limit at potentially low production costs. Current designs for monolithic tandems rely on transparent conductive oxides as an intermediate recombination layer, which lead to optical losses and reduced shunt resistance. An improved recombination junction based on nanocrystalline silicon layers to mitigate these losses is demonstrated. When employed in monolithic perovskite/silicon heterojunction tandem cells with a planar front side, this junction is found to increase the bottom cell photocurrent by more than 1 mA cm−2. In combination with a cesium-based perovskite top cell, this leads to tandem cell power-conversion efficiencies of up to 22.7% obtained from J–V measurements and steady-state efficiencies of up to 22.0% during maximum power point tracking. Thanks to its low lateral conductivity, the nanocrystalline silicon recombination junction enables upscaling of monolithic perovskite/silicon heterojunction tandem cells, resulting in a 12.96 cm2 monolithic tandem cell with a steady-state efficiency of 18%.

Improved Optics in Monolithic Perovskite/Silicon Tandem Solar Cells with a Nanocrystalline Silicon Recombination Junction

KAUST Repository

Sahli, Florent; Kamino, Brett A.; Werner, Jé ré mie; Brä uninger, Matthias; Paviet-Salomon, Bertrand; Barraud, Loris; Monnard, Raphaë l; Seif, Johannes Peter; Tomasi, Andrea; Jeangros, Quentin; Hessler-Wyser, Aï cha; De Wolf, Stefaan; Despeisse, Matthieu; Nicolay, Sylvain; Niesen, Bjoern; Ballif, Christophe

2017-01-01

Perovskite/silicon tandem solar cells are increasingly recognized as promi­sing candidates for next-generation photovoltaics with performance beyond the single-junction limit at potentially low production costs. Current designs for monolithic tandems rely on transparent conductive oxides as an intermediate recombination layer, which lead to optical losses and reduced shunt resistance. An improved recombination junction based on nanocrystalline silicon layers to mitigate these losses is demonstrated. When employed in monolithic perovskite/silicon heterojunction tandem cells with a planar front side, this junction is found to increase the bottom cell photocurrent by more than 1 mA cm−2. In combination with a cesium-based perovskite top cell, this leads to tandem cell power-conversion efficiencies of up to 22.7% obtained from J–V measurements and steady-state efficiencies of up to 22.0% during maximum power point tracking. Thanks to its low lateral conductivity, the nanocrystalline silicon recombination junction enables upscaling of monolithic perovskite/silicon heterojunction tandem cells, resulting in a 12.96 cm2 monolithic tandem cell with a steady-state efficiency of 18%.

Self-standing silicon-carbon nanotube/graphene by a scalable in situ approach from low-cost Al-Si alloy powder for lithium ion batteries

Science.gov (United States)

Cai, Hongyan; Han, Kai; Jiang, Heng; Wang, Jingwen; Liu, Hui

2017-10-01

Silicon/carbon (Si/C) composite shows great potential to replace graphite as lithium-ion battery (LIB) anode owing to its high theoretical capacity. Exploring low-cost scalable approach for synthesizing Si/C composites with excellent electrochemical performance is critical for practical application of Si/C anodes. In this study, we rationally applied a scalable in situ approach to produce Si-carbon nanotube (Si-CNT) composite via acid etching of commercial inexpensive micro-sized Al-Si alloy powder and CNT mixture. In the Si-CNT composite, ∼10 nm Si particles were uniformly deposited on the CNT surface. After combining with graphene sheets, a flexible self-standing Si-CNT/graphene paper was fabricated with three-dimensional (3D) sandwich-like structure. The in situ presence of CNT during acid-etching process shows remarkable two advantages: providing deposition sites for Si atoms to restrain agglomeration of Si nanoparticles after Al removal from Al-Si alloy powder, increasing the cross-layer conductivity of the paper anode to provide excellent conductive contact sites for each Si nanoparticles. When used as binder-free anode for LIBs without any further treatment, in situ addition of CNT especially plays important role to improve the initial electrochemical activity of Si nanoparticles synthesized from low-cost Al-Si alloy powder, thus resulting in about twice higher capacity than Si/G paper anode. The self-standing Si-CNT/graphene paper anode exhibited a high specific capacity of 1100 mAh g-1 even after 100 cycles at 200 mA g-1 current density with a Coulombic efficiency of >99%. It also showed remarkable rate capability improvement compared to Si/G paper without CNT. The present work demonstrates a low-cost scalable in situ approach from commercial micro-sized Al-Si alloy powder for Si-based composites with specific nanostructure. The Si-CNT/graphene paper is a promising anode candidate with high capacity and cycling stability for LIBs, especially for the

MEMS based Low Cost Piezoresistive Microcantilever Force Sensor and Sensor Module.

Science.gov (United States)

Pandya, H J; Kim, Hyun Tae; Roy, Rajarshi; Desai, Jaydev P

2014-03-01

In the present work, we report fabrication and characterization of a low-cost MEMS based piezoresistive micro-force sensor with SU-8 tip using laboratory made silicon-on-insulator (SOI) substrate. To prepare SOI wafer, silicon film (0.8 µm thick) was deposited on an oxidized silicon wafer using RF magnetron sputtering technique. The films were deposited in Argon (Ar) ambient without external substrate heating. The material characteristics of the sputtered deposited silicon film and silicon film annealed at different temperatures (400-1050°C) were studied using atomic force microscopy (AFM) and X-ray diffraction (XRD) techniques. The residual stress of the films was measured as a function of annealing temperature. The stress of the as-deposited films was observed to be compressive and annealing the film above 1050°C resulted in a tensile stress. The stress of the film decreased gradually with increase in annealing temperature. The fabricated cantilevers were 130 µm in length, 40 µm wide and 1.0 µm thick. A series of force-displacement curves were obtained using fabricated microcantilever with commercial AFM setup and the data were analyzed to get the spring constant and the sensitivity of the fabricated microcantilever. The measured spring constant and sensitivity of the sensor was 0.1488N/m and 2.7mV/N. The microcantilever force sensor was integrated with an electronic module that detects the change in resistance of the sensor with respect to the applied force and displays it on the computer screen.

Nonlinear silicon photonics

Science.gov (United States)

Borghi, M.; Castellan, C.; Signorini, S.; Trenti, A.; Pavesi, L.

2017-09-01

Silicon photonics is a technology based on fabricating integrated optical circuits by using the same paradigms as the dominant electronics industry. After twenty years of fervid development, silicon photonics is entering the market with low cost, high performance and mass-manufacturable optical devices. Until now, most silicon photonic devices have been based on linear optical effects, despite the many phenomenologies associated with nonlinear optics in both bulk materials and integrated waveguides. Silicon and silicon-based materials have strong optical nonlinearities which are enhanced in integrated devices by the small cross-section of the high-index contrast silicon waveguides or photonic crystals. Here the photons are made to strongly interact with the medium where they propagate. This is the central argument of nonlinear silicon photonics. It is the aim of this review to describe the state-of-the-art in the field. Starting from the basic nonlinearities in a silicon waveguide or in optical resonator geometries, many phenomena and applications are described—including frequency generation, frequency conversion, frequency-comb generation, supercontinuum generation, soliton formation, temporal imaging and time lensing, Raman lasing, and comb spectroscopy. Emerging quantum photonics applications, such as entangled photon sources, heralded single-photon sources and integrated quantum photonic circuits are also addressed at the end of this review.

Development of processes for the production of solar grade silicon from halides and alkali metals, phase 1 and phase 2

Science.gov (United States)

Dickson, C. R.; Gould, R. K.; Felder, W.

1981-01-01

High temperature reactions of silicon halides with alkali metals for the production of solar grade silicon are described. Product separation and collection processes were evaluated, measure heat release parameters for scaling purposes and effects of reactants and/or products on materials of reactor construction were determined, and preliminary engineering and economic analysis of a scaled up process were made. The feasibility of the basic process to make and collect silicon was demonstrated. The jet impaction/separation process was demonstrated to be a purification process. The rate at which gas phase species from silicon particle precursors, the time required for silane decomposition to produce particles, and the competing rate of growth of silicon seed particles injected into a decomposing silane environment were determined. The extent of silane decomposition as a function of residence time, temperature, and pressure was measured by infrared absorption spectroscopy. A simplistic model is presented to explain the growth of silicon in a decomposing silane enviroment.

Silicon solar cells: Past, present and the future

Science.gov (United States)

Lee, Youn-Jung; Kim, Byung-Sung; Ifitiquar, S. M.; Park, Cheolmin; Yi, Junsin

2014-08-01

There has been a great demand for renewable energy for the last few years. However, the solar cell industry is currently experiencing a temporary plateau due to a sluggish economy and an oversupply of low-quality cells. The current situation can be overcome by reducing the production cost and by improving the cell is conversion efficiency. New materials such as compound semiconductor thin films have been explored to reduce the fabrication cost, and structural changes have been explored to improve the cell's efficiency. Although a record efficiency of 24.7% is held by a PERL — structured silicon solar cell and 13.44% has been realized using a thin silicon film, the mass production of these cells is still too expensive. Crystalline and amorphous silicon — based solar cells have led the solar industry and have occupied more than half of the market so far. They will remain so in the future photovoltaic (PV) market by playing a pivotal role in the solar industry. In this paper, we discuss two primary approaches that may boost the silicon — based solar cell market; one is a high efficiency approach and the other is a low cost approach. We also discuss the future prospects of various solar cells.

Silicon solar cells: past, present and the future

Energy Technology Data Exchange (ETDEWEB)

Lee, Y. J.; Kim, B. S.; Ifitiquar, S. M.; Park, C. M.; Yi, J. S. [Sungkyunkwan University, Suwon (Korea, Republic of)

2014-08-15

There has been a great demand for renewable energy for the last few years. However, the solar cell industry is currently experiencing a temporary plateau due to a sluggish economy and an over supply of low-quality cells. The current situation can be overcome by reducing the production cost and by improving the cell is conversion efficiency. New materials such as compound semiconductor thin films have been explored to reduce the fabrication cost, and structural changes have been explored to improve the cell's efficiency. Although a record efficiency of 24.7% is held by a PERL - structured silicon solar cell and 13.44% has been realized using a thin silicon film, the mass production of these cells is still too expensive. Crystalline and amorphous silicon - based solar cells have led the solar industry and have occupied more than half of the market so far. They will remain so in the future photovoltaic (PV) market by playing a pivotal role in the solar industry. In this paper, we discuss two primary approaches that may boost the silicon - based solar cell market; one is a high efficiency approach and the other is a low cost approach. We also discuss the future prospects of various solar cells.

SiC/C components for nuclear applications from low cost precursor

International Nuclear Information System (INIS)

Narciso, J.; Calderon, N.R.

2009-01-01

The development of structural materials with the desired properties to produce the components facing the plasma in fusion reactors is one of the key problems in fusion technology. The structural materials used in the first wall and breeder blanket limits the operating temperature of the system, and higher operating temperatures means higher efficiency. Among the advanced material under consideration for those parts (first wall and breeder blanket) SiC based composites offers the greatest potential. However, considerable research is still required in order to solve engineering feasibility and manufacturing issues, as the improvement of the maximum working temperature and the capability of fabrication of components with homogeneous properties at reasonable cost. Last decade, there has been a strong effort in blanket design using SiC f /SiC composites which are rather expensive while excellent mechanical properties are not so mandatory as resistance to neutron irradiation for this application. In this work, an experimental procedure for manufacturing SiC/C composite materials with homogeneous properties from low cost precursors is described. The process consists in classical reactive infiltration of porous carbon preforms by liquid silicon to produce RBSC where the porous carbon preforms are tailor-made for the fabrication of SiC components without residual Si. The proper selection of the feedstock nature and the pyrolysis conditions determine the microstructure and sinterability of the carbon particles, respectively. These two features control the reactivity of the carbon substrate and porosity of the carbon preform for complete infiltration. The absence of silicon and the homogeneous microstructure of the SiC materials produced by this procedure make them suitable for structural applications at temperatures higher than 1200 deg. C. Furthermore, the technique allows near-net-shape capability and the carbon source is a low cost material. (author)

Development of Production PVD-AIN Buffer Layer System and Processes to Reduce Epitaxy Costs and Increase LED Efficiency

Energy Technology Data Exchange (ETDEWEB)

Cerio, Frank

2013-09-14

The DOE has set aggressive goals for solid state lighting (SSL) adoption, which require manufacturing and quality improvements for virtually all process steps leading to an LED luminaire product. The goals pertinent to this proposed project are to reduce the cost and improve the quality of the epitaxial growth processes used to build LED structures. The objectives outlined in this proposal focus on achieving cost reduction and performance improvements over state-of-the-art, using technologies that are low in cost and amenable to high efficiency manufacturing. The objectives of the outlined proposal focus on cost reductions in epitaxial growth by reducing epitaxy layer thickness and hetero-epitaxial strain, and by enabling the use of larger, less expensive silicon substrates and would be accomplished through the introduction of a high productivity reactive sputtering system and an effective sputtered aluminum-nitride (AlN) buffer/nucleation layer process. Success of the proposed project could enable efficient adoption of GaN on-silicon (GaN/Si) epitaxial technology on 150mm silicon substrates. The reduction in epitaxy cost per cm{sup 2} using 150mm GaN-on-Si technology derives from (1) a reduction in cost of ownership and increase in throughput for the buffer deposition process via the elimination of MOCVD buffer layers and other throughput and CoO enhancements, (2) improvement in brightness through reductions in defect density, (3) reduction in substrate cost through the replacement of sapphire with silicon, and (4) reduction in non-ESD yield loss through reductions in wafer bow and temperature variation. The adoption of 150mm GaN/Si processing will also facilitate significant cost reductions in subsequent wafer fabrication manufacturing costs. There were three phases to this project. These three phases overlap in order to aggressively facilitate a commercially available production GaN/Si capability. In Phase I of the project, the repeatability of the performance

Low-cost computer mouse for the elderly or disabled in Taiwan.

Science.gov (United States)

Chen, C-C; Chen, W-L; Chen, B-N; Shih, Y-Y; Lai, J-S; Chen, Y-L

2014-01-01

A mouse is an important communication interface between a human and a computer, but it is still difficult to use for the elderly or disabled. To develop a low-cost computer mouse auxiliary tool. The principal structure of the low-cost mouse auxiliary tool is the IR (infrared ray) array module and the Wii icon sensor module, which combine with reflective tape and the SQL Server database. This has several benefits including cheap hardware cost, fluent control, prompt response, adaptive adjustment and portability. Also, it carries the game module with the function of training and evaluation; to the trainee, it is really helpful to upgrade the sensitivity of consciousness/sense and the centralization of attention. The intervention phase/maintenance phase, with regard to clicking accuracy and use of time, p value (p< 0.05) reach the level of significance. The development of the low cost adaptive computer mouse auxiliary tool was completed during the study and was also verified as having the characteristics of low cost, easy operation and the adaptability. To patients with physical disabilities, if they have independent control action parts of their limbs, the mouse auxiliary tool is suitable for them to use, i.e. the user only needs to paste the reflective tape by the independent control action parts of the body to operate the mouse auxiliary tool.

Naturally occurring 32 Si and low-background silicon dark matter detectors

Energy Technology Data Exchange (ETDEWEB)

Orrell, John L.; Arnquist, Isaac J.; Bliss, Mary; Bunker, Raymond; Finch, Zachary S.

2018-05-01

The naturally occurring radioisotope Si-32 represents a potentially limiting background in future dark matter direct-detection experiments. We investigate sources of Si-32 and the vectors by which it comes to reside in silicon crystals used for fabrication of radiation detectors. We infer that the Si-32 concentration in commercial single-crystal silicon is likely variable, dependent upon the specific geologic and hydrologic history of the source (or sources) of silicon “ore” and the details of the silicon-refinement process. The silicon production industry is large, highly segmented by refining step, and multifaceted in terms of final product type, from which we conclude that production of Si-32-mitigated crystals requires both targeted silicon material selection and a dedicated refinement-through-crystal-production process. We review options for source material selection, including quartz from an underground source and silicon isotopically reduced in Si-32. To quantitatively evaluate the Si-32 content in silicon metal and precursor materials, we propose analytic methods employing chemical processing and radiometric measurements. Ultimately, it appears feasible to produce silicon-based detectors with low levels of Si-32, though significant assay method development is required to validate this claim and thereby enable a quality assurance program during an actual controlled silicon-detector production cycle.

Naturally occurring 32Si and low-background silicon dark matter detectors

Science.gov (United States)

Orrell, John L.; Arnquist, Isaac J.; Bliss, Mary; Bunker, Raymond; Finch, Zachary S.

2018-05-01

The naturally occurring radioisotope 32Si represents a potentially limiting background in future dark matter direct-detection experiments. We investigate sources of 32Si and the vectors by which it comes to reside in silicon crystals used for fabrication of radiation detectors. We infer that the 32Si concentration in commercial single-crystal silicon is likely variable, dependent upon the specific geologic and hydrologic history of the source (or sources) of silicon "ore" and the details of the silicon-refinement process. The silicon production industry is large, highly segmented by refining step, and multifaceted in terms of final product type, from which we conclude that production of 32Si-mitigated crystals requires both targeted silicon material selection and a dedicated refinement-through-crystal-production process. We review options for source material selection, including quartz from an underground source and silicon isotopically reduced in 32Si. To quantitatively evaluate the 32Si content in silicon metal and precursor materials, we propose analytic methods employing chemical processing and radiometric measurements. Ultimately, it appears feasible to produce silicon detectors with low levels of 32Si, though significant assay method development is required to validate this claim and thereby enable a quality assurance program during an actual controlled silicon-detector production cycle.

Low-Cost Solar Array Project. Progress report 12, January-April 1979 and proceedings of the 12th Project Integration Meeting

Energy Technology Data Exchange (ETDEWEB)

1979-01-01

This report describes progress made by the Low-Cost Solar Array Project during the period January through April 1979. It includes reports on project analysis and integration; technology development in silicon material, large-area sheet silicon, and encapsulation; production process and equipment development; engineering and operations, and a discussion of the steps taken to integrate these efforts. It includes a report on, and copies of viewgraphs presented at the Project Integration Meeting held April 4-5, 1979.

Liquid phase epitaxial growth of silicon on porous silicon for photovoltaic applications

International Nuclear Information System (INIS)

Berger, S.; Quoizola, S.; Fave, A.; Kaminski, A.; Perichon, S.; Barbier, D.; Laugier, A.

2001-01-01

The aim of this experiment is to grow a thin silicon layer ( 2 atmosphere, and finally LPE silicon growth with different temperature profiles in order to obtain a silicon layer on the sacrificial porous silicon (p-Si). We observed a pyramidal growth on the surface of the (100) porous silicon but the coalescence was difficult to obtain. However, on a p-Si (111) oriented wafer, homogeneous layers were obtained. (orig.)

Hydrogen Production Using a Molybdenum Sulfide Catalyst on a Titanium-Protected n+p-Silicon Photocathode

DEFF Research Database (Denmark)

Seger, Brian; Laursen, Anders Bo; Vesborg, Peter Christian Kjærgaard

2012-01-01

A low-cost substitute: A titanium protection layer on silicon made it possible to use silicon under highly oxidizing conditions without oxidation of the silicon. Molybdenum sulfide was electrodeposited on the Ti-protected n+p-silicon electrode. This electrode was applied as a photocathode for wat...

Peculiarities of phase transformations in molybdenum-silicon system under ion bombardment

International Nuclear Information System (INIS)

Gurskij, L.I.; Zelenin, V.A.; Bobchenok, Yu.L.

1984-01-01

The problems of effect of ion bombardment and thermal treatment on the mechanisms of formation of transition layers and structural transformations in the molybdenum-silicon system, where the interface is subjected to ion bombardment through a film of molybdenum, are considered. The method of electron diffraction analysis has been applied to establish that at the molybdenum-silicon interface a transitional region appears during irradiation which has a semiamorphous structure at the doses up to 8x10 14 ion/cm 2 , while at higher doses it transforms into polycrystalline intermediate layer which consists of MoB and the compound close in composition to MoSisub(0.65). Due to thermal treatment for 60873 K a large-grain phase (Mo 3 Si+MoSi 2 ) appears in the transition layer below which a large-grain silicon layer is placed

Dry Etch Black Silicon with Low Surface Damage: Effect of Low Capacitively Coupled Plasma Power

DEFF Research Database (Denmark)

Iandolo, Beniamino; Plakhotnyuk, Maksym; Gaudig, Maria

2017-01-01

Black silicon fabricated by reactive ion etch (RIE) is promising for integration into silicon solar cells thanks to its excellent light trapping ability. However, intensive ion bombardment during the RIE induces surface damage, which results in enhanced surface recombination velocity. Here, we pr...... carrier lifetime thanks to reduced ion energy. Surface passivation using atomic layer deposition of Al2O3 improves the effective lifetime to 7.5 ms and 0.8 ms for black silicon n- and p-type wafers, respectively.......Black silicon fabricated by reactive ion etch (RIE) is promising for integration into silicon solar cells thanks to its excellent light trapping ability. However, intensive ion bombardment during the RIE induces surface damage, which results in enhanced surface recombination velocity. Here, we...... present a RIE optimization leading to reduced surface damage while retaining excellent light trapping and low reflectivity. In particular, we demonstrate that the reduction of the capacitively coupled power during reactive ion etching preserves a reflectance below 1% and improves the effective minority...

Low-Cost Solar Array Project. Progress report 14, August 1979-December 1979 and proceedings of the 14th Project Integration Meeting

Energy Technology Data Exchange (ETDEWEB)

1980-01-01

Progress made by the Low-Cost Solar Array Project during the period August through November 1979, is described. Progress on project analysis and integration; technology development in silicon material, large-area sheet silicon, and encapsulation; production process and equipment development; engineering, and operations, and the steps taken to integrate these efforts are detailed. A report on the Project Integration Meeting held December 5-6, 1979, including copies of the visual materials used, is presented.

Tunable Laser for High-Performance, Low-Cost Distributed Sensing Platform, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — The proposed effort will establish technical feasibility of an approach to optimizing a low-cost, fast-sweeping tunable laser for distributed sensing. Multiple...

Reliable, Low-Cost, Low-Weight, Non-Hermetic Coating for MCM Applications

Science.gov (United States)

Jones, Eric W.; Licari, James J.

2000-01-01

Through an Air Force Research Laboratory sponsored STM program, reliable, low-cost, low-weight, non-hermetic coatings for multi-chip-module(MCK applications were developed. Using the combination of Sandia Laboratory ATC-01 test chips, AvanTeco's moisture sensor chips(MSC's), and silicon slices, we have shown that organic and organic/inorganic overcoatings are reliable and practical non-hermetic moisture and oxidation barriers. The use of the MSC and unpassivated ATC-01 test chips provided rapid test results and comparison of moisture barrier quality of the overcoatings. The organic coatings studied were Parylene and Cyclotene. The inorganic coatings were Al2O3 and SiO2. The choice of coating(s) is dependent on the environment that the device(s) will be exposed to. We have defined four(4) classes of environments: Class I(moderate temperature/moderate humidity). Class H(high temperature/moderate humidity). Class III(moderate temperature/high humidity). Class IV(high temperature/high humidity). By subjecting the components to adhesion, FTIR, temperature-humidity(TH), pressure cooker(PCT), and electrical tests, we have determined that it is possible to reduce failures 50-70% for organic/inorganic coated components compared to organic coated components. All materials and equipment used are readily available commercially or are standard in most semiconductor fabrication lines. It is estimated that production cost for the developed technology would range from $1-10/module, compared to $20-200 for hermetically sealed packages.

Fiscal 1980-1987 Sunshine Program achievement reports. Development for practical application of photovoltaic system (Verification of experimental low cost silicon refining - Overview: Development of technology for chlorosilane hydrogen-reduction process); 1980-1987 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Tei cost silicon jijkken seisei kensho sokatsuban (chlorosilane no suiso kangen kotei no gijutsu kaihatsu)

Energy Technology Data Exchange (ETDEWEB)

NONE

1988-11-01

The chlorosilane hydrogen-reduction technology development period may be divided into the first phase (fiscal 1980-1985) and the second phase (fiscal 1986-1988). During the former phase, efforts were exerted to develop a small experimental device (10 tons/year class) and technologies to operate the same. Important challenges were to cause reaction to occur only on the seed grains in the reactor and to create a proper material for the reactor tube. In the latter phase, element technologies were developed, indispensable for the development of a practical reactor. Endeavors exerted to solve these challenges were the development of a high-strength large-diameter reactor tube, the development of an SiC-CVD (chemical vapor deposition) coating technology, and the development of a technology to join parts to the ceramic-made reactor tube. After eight years' striving, a fluidized bed reactor has been successfully constructed, capable of continuously reducing trichlorosilane by hydrogen. The success promises stable production and supply of polycrystalline silicon. The SOG (spun on glass)-Si produced by the reactor is pure enough to serve the purpose of photovoltaics, and its unit cost has been lowered as initially intended. (NEDO)

Low cost silicon solar array project silicon materials task: Establishment of the feasibility of a process capable of low-cost, high volume production of silane (step 1) and the pyrolysis of silane to semiconductor-grade silicon (step 2)

Science.gov (United States)

Breneman, W. C.; Cheung, H.; Farrier, E. G.; Morihara, H.

1977-01-01

A quartz fluid bed reactor capable of operating at temperatures of up to 1000 C was designed, constructed, and successfully operated. During a 30 minute experiment, silane was decomposed within the reactor with no pyrolysis occurring on the reactor wall or on the gas injection system. A hammer mill/roller-crusher system appeared to be the most practical method for producing seed material from bulk silicon. No measurable impurities were detected in the silicon powder produced by the free space reactor, using the cathode layer emission spectroscopic technique. Impurity concentration followed by emission spectroscopic examination of the residue indicated a total impurity level of 2 micrograms/gram. A pellet cast from this powder had an electrical resistivity of 35 to 45 ohm-cm and P-type conductivity.

Advances in silicon nanophotonics

DEFF Research Database (Denmark)

Hvam, Jørn Märcher; Pu, Minhao

Silicon has long been established as an ideal material for passive integrated optical circuitry due to its high refractive index, with corresponding strong optical confinement ability, and its low-cost CMOS-compatible manufacturability. However, the inversion symmetry of the silicon crystal lattice.......g. in high-bit-rate optical communication circuits and networks, it is vital that the nonlinear optical effects of silicon are being strongly enhanced. This can among others be achieved in photonic-crystal slow-light waveguides and in nano-engineered photonic-wires (Fig. 1). In this talk I shall present some...... recent advances in this direction. The efficient coupling of light between optical fibers and the planar silicon devices and circuits is of crucial importance. Both end-coupling (Fig. 1) and grating-coupling solutions will be discussed along with polarization issues. A new scheme for a hybrid III...

Thermoelectric Properties of High-Doped Silicon from Room Temperature to 900 K

Science.gov (United States)

Stranz, A.; Kähler, J.; Waag, A.; Peiner, E.

2013-07-01

Silicon is investigated as a low-cost, Earth-abundant thermoelectric material for high-temperature applications up to 900 K. For the calculation of module design the Seebeck coefficient and the electrical as well as thermal properties of silicon in the high-temperature range are of great importance. In this study, we evaluate the thermoelectric properties of low-, medium-, and high-doped silicon from room temperature to 900 K. In so doing, the Seebeck coefficient, the electrical and thermal conductivities, as well as the resulting figure of merit ZT of silicon are determined.

The Design of a High Speed Low Power Phase Locked Loop

CERN Document Server

Liu, Tiankuan; Hou, Suen; Liang, Zhihua; Liu, Chonghan; Su, Da-Shung; Teng, Ping-Kun; Xiang, Annie C; Ye, Jingbo

2009-01-01

The upgrade of the ATLAS Liquid Argon Calorimeter readout system calls for the development of radiation tolerant, high speed and low power serializer ASIC. We have designed a phase locked loop using a commercial 0.25-μm Silicon-on- Sapphire (SoS) CMOS technology. Post-layout simulation indicates that tuning range is 3.79 – 5.01 GHz and power consumption is 104 mW. The PLL has been submitted for fabrication. The design and simulation results are presented.

A Novel Low-Cost Dual-Wavelength Precipitation Radar Sensor Network, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — Remote Sensing Solutions, Inc. (RSS) has developed a novel, practical design that will produce a low-cost precipitation radar / radiometer sensor. Operating in a...

Optoelectronic enhancement of monocrystalline silicon solar cells by porous silicon-assisted mechanical grooving

Energy Technology Data Exchange (ETDEWEB)

Ben Rabha, Mohamed; Mohamed, Seifeddine Belhadj; Dimassi, Wissem; Gaidi, Mounir; Ezzaouia, Hatem; Bessais, Brahim [Laboratoire de Photovoltaique, Centre de Recherches et des Technologies de l' Energie, Technopole de Borj-Cedria, BP 95, 2050 Hammam-Lif (Tunisia)

2011-03-15

One of the most important factors influencing silicon solar cells performances is the front side reflectivity. Consequently, new methods for efficient reduction of this reflectivity are searched. This has always been done by creating a rough surface that enables incident light of being absorbed within the solar cell. Combination of texturization-porous silicon surface treatment was found to be an attractive technical solution for lowering the reflectivity of monocrystalline silicon (c-Si). The texturization of the monocrystalline silicon wafer was carried out by means of mechanical grooving. A specific etching procedure was then applied to form a thin porous silicon layer enabling to remove mechanical damages. This simple and low cost method reduces the total reflectivity from 29% to 7% in the 300 - 950 nm wavelength range and enhances the diffusion length of the minority carriers from 100 {mu}m to 790 {mu}m (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Millimeter-wave silicon-based ultra-wideband automotive radar transceivers

Science.gov (United States)

Jain, Vipul

Since the invention of the integrated circuit, the semiconductor industry has revolutionized the world in ways no one had ever anticipated. With the advent of silicon technologies, consumer electronics became light-weight and affordable and paved the way for an Information-Communication-Entertainment age. While silicon almost completely replaced compound semiconductors from these markets, it has been unable to compete in areas with more stringent requirements due to technology limitations. One of these areas is automotive radar sensors, which will enable next-generation collision-warning systems in automobiles. A low-cost implementation is absolutely essential for widespread use of these systems, which leads us to the subject of this dissertation---silicon-based solutions for automotive radars. This dissertation presents architectures and design techniques for mm-wave automotive radar transceivers. Several fully-integrated transceivers and receivers operating at 22-29 GHz and 77-81 GHz are demonstrated in both CMOS and SiGe BiCMOS technologies. Excellent performance is achieved indicating the suitability of silicon technologies for automotive radar sensors. The first CMOS 22-29-GHz pulse-radar receiver front-end for ultra-wideband radars is presented. The chip includes a low noise amplifier, I/Q mixers, quadrature voltage-controlled oscillators, pulse formers and variable-gain amplifiers. Fabricated in 0.18-mum CMOS, the receiver achieves a conversion gain of 35-38.1 dB and a noise figure of 5.5-7.4 dB. Integration of multi-mode multi-band transceivers on a single chip will enable next-generation low-cost automotive radar sensors. Two highly-integrated silicon ICs are designed in a 0.18-mum BiCMOS technology. These designs are also the first reported demonstrations of mm-wave circuits with high-speed digital circuits on the same chip. The first mm-wave dual-band frequency synthesizer and transceiver, operating in the 24-GHz and 77-GHz bands, are demonstrated. All

Silicon photonics: some remaining challenges

Science.gov (United States)

Reed, G. T.; Topley, R.; Khokhar, A. Z.; Thompson, D. J.; Stanković, S.; Reynolds, S.; Chen, X.; Soper, N.; Mitchell, C. J.; Hu, Y.; Shen, L.; Martinez-Jimenez, G.; Healy, N.; Mailis, S.; Peacock, A. C.; Nedeljkovic, M.; Gardes, F. Y.; Soler Penades, J.; Alonso-Ramos, C.; Ortega-Monux, A.; Wanguemert-Perez, G.; Molina-Fernandez, I.; Cheben, P.; Mashanovich, G. Z.

2016-03-01

This paper discusses some of the remaining challenges for silicon photonics, and how we at Southampton University have approached some of them. Despite phenomenal advances in the field of Silicon Photonics, there are a number of areas that still require development. For short to medium reach applications, there is a need to improve the power consumption of photonic circuits such that inter-chip, and perhaps intra-chip applications are viable. This means that yet smaller devices are required as well as thermally stable devices, and multiple wavelength channels. In turn this demands smaller, more efficient modulators, athermal circuits, and improved wavelength division multiplexers. The debate continues as to whether on-chip lasers are necessary for all applications, but an efficient low cost laser would benefit many applications. Multi-layer photonics offers the possibility of increasing the complexity and effectiveness of a given area of chip real estate, but it is a demanding challenge. Low cost packaging (in particular, passive alignment of fibre to waveguide), and effective wafer scale testing strategies, are also essential for mass market applications. Whilst solutions to these challenges would enhance most applications, a derivative technology is emerging, that of Mid Infra-Red (MIR) silicon photonics. This field will build on existing developments, but will require key enhancements to facilitate functionality at longer wavelengths. In common with mainstream silicon photonics, significant developments have been made, but there is still much left to do. Here we summarise some of our recent work towards wafer scale testing, passive alignment, multiplexing, and MIR silicon photonics technology.

A Low Cost Light Weight Polymer Derived Ceramic Telescope Mirror, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — The primary purpose of this proposal is to develop and demonstrate a new technology for manufacturing an ultra-low-cost precision optical telescope mirror which can...

Very Low-Cost, Rugged, High-Vacuum System for Mass Spectrometers, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — NASA, the DoD, DHS, and commercial industry have a pressing need for miniaturized, rugged, low-cost, high vacuum systems. Recent advances in sensor technology at...

Development of the silane process for the production of low-cost polysilicon

Science.gov (United States)

Iya, S. K.

1986-01-01

It was recognized that the traditional hot rod type deposition process for decomposing silane is energy intensive, and a different approach for converting silane to silicon was chosen. A 1200 metric tons/year capacity commercial plant was constructed in Moses Lake, Washington. A fluidized bed processor was chosen as the most promising technology and several encouraging test runs were conducted. This technology continues to be very promising in producing low cost polysilicon. The Union Carbide silane process and the research development on the fluidized bed silane decomposition are discussed.

Boron, arsenic and phosphorus dopant incorporation during low temperature low pressure silicon epitaxial growth

International Nuclear Information System (INIS)

Borland, J.O.; Thompson, T.; Tagle, V.; Benzing, W.

1987-01-01

Submicron silicon epitaxial structures with very abrupt epi/substrate transition widths have been realized through the use of low temperature silicon epitaxial growth techniques. At these low temperature and low pressure epitaxial growth conditions there is minimal, if any, dopant diffusion from the substrate into the epilayer during deposition. The reincorporation of autodoped dopant as well as the incorporation of intentional dopant can be a trade-off at low temperatures and low pressures. For advanced CMOS and Bi-CMOS technologies, five to six orders of magnitude change in concentration levels are desirable. In this investigation, all of the epitaxial depositions were carried out in an AMC-7810 epi-reactor with standard jets for a turbulent mixing system, and using a modified center inject configuration to achieve a single pass laminar flow system. To simulate the reincorporation of various autodoped dopant, the authors ran a controlled dopant flow of 100 sccm for each of the three dopants (boron, phosphorus and arsenic) to achieve the controlled background dopant level in the reactor gas stream

Low-Weight, Durable, and Low-Cost Metal Rubber Sensor System for Ultra Long Duration Scientific Balloons, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — NanoSonic proposes to develop an innovative, low-cost, ultra low mass density, and non-intrusive sensor system for ultra long duration balloons (ULDB) that will...

Compensation of decreased ion energy by increased hydrogen dilution in plasma deposition of thin film silicon solar cells at low substrate temperatures

NARCIS (Netherlands)

Verkerk, A.D.; de Jong, M.M.; Rath, J.K.; Brinza, M.; Schropp, R.E.I.; Goedheer, W.J.; Krzhizhanovskaya, V.V.; Gorbachev, Y.E.; Orlov, K.E.; Khilkevitch, E.M.; Smirnov, A.S.

2009-01-01

In order to deposit thin film silicon solar cells on plastics and papers, the deposition process needs to be adapted for low deposition temperatures. In a very high frequency plasma-enhanced chemical vapor deposition (VHF PECVD) process, both the gas phase and the surface processes are affected by

Plasmonic Properties of Silicon Nanocrystals Doped with Boron and Phosphorus.

Science.gov (United States)

Kramer, Nicolaas J; Schramke, Katelyn S; Kortshagen, Uwe R

2015-08-12

Degenerately doped silicon nanocrystals are appealing plasmonic materials due to silicon's low cost and low toxicity. While surface plasmonic resonances of boron-doped and phosphorus-doped silicon nanocrystals were recently observed, there currently is poor understanding of the effect of surface conditions on their plasmonic behavior. Here, we demonstrate that phosphorus-doped silicon nanocrystals exhibit a plasmon resonance immediately after their synthesis but may lose their plasmonic response with oxidation. In contrast, boron-doped nanocrystals initially do not exhibit plasmonic response but become plasmonically active through postsynthesis oxidation or annealing. We interpret these results in terms of substitutional doping being the dominant doping mechanism for phosphorus-doped silicon nanocrystals, with oxidation-induced defects trapping free electrons. The behavior of boron-doped silicon nanocrystals is more consistent with a strong contribution of surface doping. Importantly, boron-doped silicon nanocrystals exhibit air-stable plasmonic behavior over periods of more than a year.

System-level integration of active silicon photonic biosensors

Science.gov (United States)

Laplatine, L.; Al'Mrayat, O.; Luan, E.; Fang, C.; Rezaiezadeh, S.; Ratner, D. M.; Cheung, K.; Dattner, Y.; Chrostowski, L.

2017-02-01

Biosensors based on silicon photonic integrated circuits have attracted a growing interest in recent years. The use of sub-micron silicon waveguides to propagate near-infrared light allows for the drastic reduction of the optical system size, while increasing its complexity and sensitivity. Using silicon as the propagating medium also leverages the fabrication capabilities of CMOS foundries, which offer low-cost mass production. Researchers have deeply investigated photonic sensor devices, such as ring resonators, interferometers and photonic crystals, but the practical integration of silicon photonic biochips as part of a complete system has received less attention. Herein, we present a practical system-level architecture which can be employed to integrate the aforementioned photonic biosensors. We describe a system based on 1 mm2 dies that integrate germanium photodetectors and a single light coupling device. The die are embedded into a 16x16 mm2 epoxy package to enable microfluidic and electrical integration. First, we demonstrate a simple process to mimic Fan-Out Wafer-level-Packaging, which enables low-cost mass production. We then characterize the photodetectors in the photovoltaic mode, which exhibit high sensitivity at low optical power. Finally, we present a new grating coupler concept to relax the lateral alignment tolerance down to +/- 50 μm at 1-dB (80%) power penalty, which should permit non-experts to use the biochips in a"plug-and-play" style. The system-level integration demonstrated in this study paves the way towards the mass production of low-cost and highly sensitive biosensors, and can facilitate their wide adoption for biomedical and agro-environmental applications.

A theoretical approach to photosynthetically active radiation silicon sensor

International Nuclear Information System (INIS)

Tamasi, M.J.L.; Martínez Bogado, M.G.

2013-01-01

This paper presents a theoretical approach for the development of low cost radiometers to measure photosynthetically active radiation (PAR). Two alternatives are considered: a) glass optical filters attached to a silicon sensor, and b) dielectric coating on a silicon sensor. The devices proposed are based on radiometers previously developed by the Argentine National Atomic Energy Commission. The objective of this work is to adapt these low cost radiometers to construct reliable instruments for measuring PAR. The transmittance of optical filters and sensor response have been analyzed for different dielectric materials, number of layers deposited, and incidence angles. Uncertainties in thickness of layer deposition were evaluated. - Highlights: • Design of radiometers to measure photosynthetically active radiation • The study has used a filter and a Si sensor to modify spectral response. • Dielectric multilayers on glass and silicon sensor • Spectral response related to different incidence angles, materials and spectra

Dynamic Characterization and Impulse Response Modeling of Amplitude and Phase Response of Silicon Nanowires

DEFF Research Database (Denmark)

Cleary, Ciaran S.; Ji, Hua; Dailey, James M.

2013-01-01

Amplitude and phase dynamics of silicon nanowires were measured using time-resolved spectroscopy. Time shifts of the maximum phase change and minimum amplitude as a function of pump power due to saturation of the free-carrier density were observed. A phenomenological impulse response model used t...

Polycrystalline Silicon Gettered by Porous Silicon and Heavy Phosphorous Diffusion

Institute of Scientific and Technical Information of China (English)

LIU Zuming(刘祖明); Souleymane K Traore; ZHANG Zhongwen(张忠文); LUO Yi(罗毅)

2004-01-01

The biggest barrier for photovoltaic (PV) utilization is its high cost, so the key for scale PV utilization is to further decrease the cost of solar cells. One way to improve the efficiency, and therefore lower the cost, is to increase the minority carrier lifetime by controlling the material defects. The main defects in grain boundaries of polycrystalline silicon gettered by porous silicon and heavy phosphorous diffusion have been studied. The porous silicon was formed on the two surfaces of wafers by chemical etching. Phosphorous was then diffused into the wafers at high temperature (900℃). After the porous silicon and diffusion layers were removed, the minority carrier lifetime was measured by photo-conductor decay. The results show that the lifetime's minority carriers are increased greatly after such treatment.

Silicon Tracker Design for the ILC

International Nuclear Information System (INIS)

Nelson, T.; SLAC

2005-01-01

The task of tracking charged particles in energy frontier collider experiments has been largely taken over by solid-state detectors. While silicon microstrip trackers offer many advantages in this environment, large silicon trackers are generally much more massive than their gaseous counterparts. Because of the properties of the machine itself, much of the material that comprises a typical silicon microstrip tracker can be eliminated from a design for the ILC. This realization is the inspiration for a tracker design using lightweight, short, mass-producible modules to tile closed, nested cylinders with silicon microstrips. This design relies upon a few key technologies to provide excellent performance with low cost and complexity. The details of this concept are discussed, along with the performance and status of the design effort

Silicon-Light: a European FP7 Project Aiming at High Efficiency Thin Film Silicon Solar Cells on Foil

DEFF Research Database (Denmark)

Soppe, W.; Haug, F.-J.; Couty, P.

2011-01-01

Silicon-Light is a European FP7 project, which started January 1st, 2010 and aims at development of low cost, high-efficiency thin film silicon solar cells on foil. Three main routes are explored to achieve these goals: a) advanced light trapping by implementing nanotexturization through UV Nano...... calculations of ideal nanotextures for light trapping in thin film silicon solar cells; the fabrication of masters and the replication and roll-to-roll fabrication of these nanotextures. Further, results on ITO variants with improved work function are presented. Finally, the status of cell fabrication on foils...

Low surface damage dry etched black silicon

Science.gov (United States)

Plakhotnyuk, Maksym M.; Gaudig, Maria; Davidsen, Rasmus Schmidt; Lindhard, Jonas Michael; Hirsch, Jens; Lausch, Dominik; Schmidt, Michael Stenbæk; Stamate, Eugen; Hansen, Ole

2017-10-01

Black silicon (bSi) is promising for integration into silicon solar cell fabrication flow due to its excellent light trapping and low reflectance, and a continuously improving passivation. However, intensive ion bombardment during the reactive ion etching used to fabricate bSi induces surface damage that causes significant recombination. Here, we present a process optimization strategy for bSi, where surface damage is reduced and surface passivation is improved while excellent light trapping and low reflectance are maintained. We demonstrate that reduction of the capacitively coupled plasma power, during reactive ion etching at non-cryogenic temperature (-20 °C), preserves the reflectivity below 1% and improves the effective minority carrier lifetime due to reduced ion energy. We investigate the effect of the etching process on the surface morphology, light trapping, reflectance, transmittance, and effective lifetime of bSi. Additional surface passivation using atomic layer deposition of Al2O3 significantly improves the effective lifetime. For n-type wafers, the lifetime reaches 12 ms for polished and 7.5 ms for bSi surfaces. For p-type wafers, the lifetime reaches 800 μs for both polished and bSi surfaces.

Monolithically interconnected Silicon-Film{trademark} module technology: Annual technical report, 25 November 1997--24 November 1998

Energy Technology Data Exchange (ETDEWEB)

Hall, R.B.; Ford, D.H.; Rand, J.A.; Ingram, A.E.

1999-11-11

AstroPower continued its development of an advanced thin-silicon-based photovoltaic module product. This module combines the performance advantages of thin, light-trapped silicon layers with the capability of integration into a low-cost, monolithically interconnected array. This report summarizes the work carried out over the first year of a three-year, cost-shared contract, which has yielded the following results: Development of a low-cost, insulating, ceramic substrate that provides mechanical support at silicon growth temperatures, is matched to the thermal expansion of silicon, provides the optical properties required for light trapping through random texturing, and can be formed in large areas on a continuous basis. Different deposition techniques have been investigated, and AstroPower has developed deposition processes for the back conductive layer, the p-type silicon layer, and the mechanical/chemical barrier layer. Polycrystalline films of silicon have been grown on ceramics using AstroPower's Silicon-Film{trademark} process. These films are from 50 to 75 {micro}m thick, with columnar grains extending through the thickness of the film. Aspect ratios from 5:1 to 20:1 have been observed in these films.

Standard semiconductor packaging for high-reliability low-cost MEMS applications

Science.gov (United States)

Harney, Kieran P.

2005-01-01

Microelectronic packaging technology has evolved over the years in response to the needs of IC technology. The fundamental purpose of the package is to provide protection for the silicon chip and to provide electrical connection to the circuit board. Major change has been witnessed in packaging and today wafer level packaging technology has further revolutionized the industry. MEMS (Micro Electro Mechanical Systems) technology has created new challenges for packaging that do not exist in standard ICs. However, the fundamental objective of MEMS packaging is the same as traditional ICs, the low cost and reliable presentation of the MEMS chip to the next level interconnect. Inertial MEMS is one of the best examples of the successful commercialization of MEMS technology. The adoption of MEMS accelerometers for automotive airbag applications has created a high volume market that demands the highest reliability at low cost. The suppliers to these markets have responded by exploiting standard semiconductor packaging infrastructures. However, there are special packaging needs for MEMS that cannot be ignored. New applications for inertial MEMS devices are emerging in the consumer space that adds the imperative of small size to the need for reliability and low cost. These trends are not unique to MEMS accelerometers. For any MEMS technology to be successful the packaging must provide the basic reliability and interconnection functions, adding the least possible cost to the product. This paper will discuss the evolution of MEMS packaging in the accelerometer industry and identify the main issues that needed to be addressed to enable the successful commercialization of the technology in the automotive and consumer markets.

Effective Chemical Route to 2D Nanostructured Silicon Electrode Material: Phase Transition from Exfoliated Clay Nanosheet to Porous Si Nanoplate

International Nuclear Information System (INIS)

Adpakpang, Kanyaporn; Patil, Sharad B.; Oh, Seung Mi; Kang, Joo-Hee; Lacroix, Marc; Hwang, Seong-Ju

2016-01-01

Graphical abstract: Effective morphological control of porous silicon 2D nanoplate can be achieved by the magnesiothermically-induced phase transition of exfoliated silicate clay nanosheets. The promising lithium storage performance of the obtained silicon materials with huge capacity and excellent rate characteristics underscores the prime importance of porously 2D nanostructured morphology of silicon. - Highlights: • 2D nanostructured silicon electrode materials are successfully synthesized via the magnesiothermically-induced phase transition of exfoliated clay 2D nanosheets. • High discharge capacity and rate capability are achieved from the 2D nanoplates of silicon. • Silicon 2D nanoplates can enhance both Li"+ diffusion and charge-transfer kinetics. • 2D nanostructured silicon is beneficial for the cycling stability by minimizing the volume change during lithiation-delithiation. - Abstract: An efficient and economical route for the synthesis of porous two-dimensional (2D) nanoplates of silicon is developed via the magnesiothermically-induced phase transition of exfoliated clay 2D nanosheets. The magnesiothermic reaction of precursor clay nanosheets prepared by the exfoliation and restacking with Mg"2"+ cations yields porous 2D nanoplates of elemental silicon. The variation in the Mg:SiO_2 ratio has a significant effect on the porosity and connectivity of silicon nanoplates. The porous silicon nanoplates show a high discharge capacity of 2000 mAh g"−"1 after 50 cycles. Of prime importance is that this electrode material still retains a large discharge capacity at higher C-rates, which is unusual for the elemental silicon electrode. This is mainly attributed to the improved diffusion of lithium ions, charge-transfer kinetics, and the preservation of the electrical connection of the porous 2D plate-shaped morphology. This study highlights the usefulness of clay mineral as an economical and scalable precursor of high-performance silicon electrodes with

Simple Heat Treatment for Production of Hot-Dip Galvanized Dual Phase Steel Using Si-Al Steels

Science.gov (United States)

Equihua-Guillén, F.; García-Lara, A. M.; Muñíz-Valdes, C. R.; Ortíz-Cuellar, J. C.; Camporredondo-Saucedo, J. E.

2014-01-01

This work presents relevant metallurgical considerations to produce galvanized dual phase steels from low cost aluminum-silicon steels which are produced by continuous strip processing. Two steels with different contents of Si and Al were austenized in the two-phase field ferrite + austenite (α + γ) in a fast manner to obtain dual phase steels, suitable for hot-dip galvanizing process, under typical parameters of continuous annealing processing line. Tensile dual phase properties were obtained from specimens cooled from temperature below Ar3, held during 3 min, intermediate cooling at temperature above Ar1 and quenching in Zn bath at 465 °C. The results have shown typical microstructure and tensile properties of galvanized dual phase steels. Finally, the synergistic effect of aluminum, silicon, and residual chromium on martensite start temperature ( M s), critical cooling rate ( C R), volume fraction of martensite, and tensile properties has been studied.

The Cost of Enforcing Building Energy Codes: Phase 1

Energy Technology Data Exchange (ETDEWEB)

Williams, Alison [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Vine, Ed [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Price, Sarah [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Sturges, Andrew [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Rosenquist, Greg [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

2013-04-01

The purpose of this literature review is to summarize key findings regarding the costs associated with enforcing building energy code compliance—primarily focusing on costs borne by local government. The review takes into consideration over 150 documents that discuss, to some extent, code enforcement. This review emphasizes those documents that specifically focus on costs associated with energy code enforcement. Given the low rates of building energy code compliance that have been reported in existing studies, as well as the many barriers to both energy code compliance and enforcement, this study seeks to identify the costs of initiatives to improve compliance and enforcement. Costs are reported primarily as presented in the original source. Some costs are given on a per home or per building basis, and others are provided for jurisdictions of a certain size. This literature review gives an overview of state-based compliance rates, barriers to code enforcement, and U.S. Department of Energy (DOE) and key stakeholder involvement in improving compliance with building energy codes. In addition, the processes and costs associated with compliance and enforcement of building energy codes are presented. The second phase of this study, which will be presented in a different report, will consist of surveying 34 experts in the building industry at the national and state or local levels in order to obtain additional cost information, building on the findings from the first phase, as well as recommendations for where to most effectively spend money on compliance and enforcement.

Low cost label-free live cell imaging for biological samples

Science.gov (United States)

Seniya, C.; Towers, C. E.; Towers, D. P.

2017-02-01

This paper reports the progress to develop a practical phase measuring microscope offering new capabilities in terms of phase measurement accuracy and quantification of cell:cell interactions over the longer term. A novel, low cost phase interference microscope for imaging live cells (label-free) is described. The method combines the Zernike phase contrast approach with a dual mirror design to enable phase modulation between the scattered and un-scattered optical fields. Two designs are proposed and demonstrated, one of which retains the common path nature of Zernike's original microscopy concept. In both setups the phase shift is simple to control via a piezoelectric driven mirror in the back focal plane of the imaging system. The approach is significantly cheaper to implement than those based on spatial light modulators (SLM) at approximately 20% of the cost. A quantitative assessment of the performance of a set of phase shifting algorithms is also presented, specifically with regard to broad bandwidth illumination in phase contrast microscopy. The simulation results show that the phase measurement accuracy is strongly dependent on the algorithm selected and the optical path difference in the sample.

Semiconductor Grade, Solar Silicon Purification Project. [photovoltaic solar energy conversion

Science.gov (United States)

Ingle, W. M.; Rosler, R. S.; Thompson, S. W.; Chaney, R. E.

1979-01-01

A low cost by-product, SiF4, is reacted with mg silicon to form SiF2 gas which is polymerized. The (SiF2)x polymer is heated forming volatile SixFy homologues which disproportionate on a silicon particle bed forming silicon and SiF4. The silicon analysis procedure relied heavily on mass spectroscopic and emission spectroscopic analysis. These analyses demonstrated that major purification had occured and some samples were indistinguishable from semiconductor grade silicon (except possibly for phosphorus). However, electrical analysis via crystal growth reveal that the product contains compensated phosphorus and boron.

Low-temperature synthesis of homogeneous nanocrystalline cubic silicon carbide films

International Nuclear Information System (INIS)

Cheng Qijin; Xu, S.

2007-01-01

Silicon carbide films are fabricated by inductively coupled plasma chemical vapor deposition from feedstock gases silane and methane heavily diluted with hydrogen at a low substrate temperature of 300 deg. C. Fourier transform infrared absorption spectroscopy, Raman spectroscopy, x-ray photoelectron spectroscopy, and high-resolution transmission electron microscopy analyses show that homogeneous nanocrystalline cubic silicon carbide (3C-SiC) films can be synthesized at an appropriate silane fraction X[100%xsilane flow(SCCM)/silane+methane flow(SCCM)] in the gas mixture. The achievement of homogeneous nanocrystalline 3C-SiC films at a low substrate temperature of 300 deg. C is a synergy of a low deposition pressure (22 mTorr), high inductive rf power (2000 W), heavy dilution of feedstock gases silane and methane with hydrogen, and appropriate silane fractions X (X≤33%) in the gas mixture employed in our experiments

University Crystalline Silicon Photovoltaics Research and Development

Energy Technology Data Exchange (ETDEWEB)

Ajeet Rohatgi; Vijay Yelundur; Abasifreke Ebong; Dong Seop Kim

2008-08-18

The overall goal of the program is to advance the current state of crystalline silicon solar cell technology to make photovoltaics more competitive with conventional energy sources. This program emphasizes fundamental and applied research that results in low-cost, high-efficiency cells on commercial silicon substrates with strong involvement of the PV industry, and support a very strong photovoltaics education program in the US based on classroom education and hands-on training in the laboratory.

Broadband wavelength conversion in hydrogenated amorphous silicon waveguide with silicon nitride layer

Science.gov (United States)

Wang, Jiang; Li, Yongfang; Wang, Zhaolu; Han, Jing; Huang, Nan; Liu, Hongjun

2018-01-01

Broadband wavelength conversion based on degenerate four-wave mixing is theoretically investigated in a hydrogenated amorphous silicon (a-Si:H) waveguide with silicon nitride inter-cladding layer (a-Si:HN). We have found that enhancement of the non-linear effect of a-Si:H waveguide nitride intermediate layer facilitates broadband wavelength conversion. Conversion bandwidth of 490 nm and conversion efficiency of 11.4 dB were achieved in a numerical simulation of a 4 mm-long a-Si:HN waveguide under 1.55 μm continuous wave pumping. This broadband continuous-wave wavelength converter has potential applications in photonic networks, a type of readily manufactured low-cost highly integrated optical circuits.

Recycling of silicon: from industrial waste to biocompatible nanoparticles for nanomedicine

Science.gov (United States)

Kozlov, N. K.; Natashina, U. A.; Tamarov, K. P.; Gongalsky, M. B.; Solovyev, V. V.; Kudryavtsev, A. A.; Sivakov, V.; Osminkina, L. A.

2017-09-01

The formation of photoluminescent porous silicon (PSi) nanoparticles (NPs) is usually based on an expensive semiconductor grade wafers technology. Here, we report a low-cost method of PSi NPs synthesis from the industrial silicon waste remained after the wafer production. The proposed method is based on metal-assisted wet-chemical etching (MACE) of the silicon surface of cm-sized metallurgical grade silicon stones which leads to a nanostructuring of the surface due to an anisotropic etching, with subsequent ultrasound fracturing in water. The obtained PSi NPs exhibit bright red room temperature photoluminescence (PL) and demonstrate similar microstructure and physical characteristics in comparison with the nanoparticles synthesized from semiconductor grade Si wafers. PSi NPs prepared from metallurgical grade silicon stones, similar to silicon NPs synthesized from high purity silicon wafer, show low toxicity to biological objects that open the possibility of using such type of NPs in nanomedicine.

III-V/Active-Silicon Integration for Low-Cost High-Performance Concentrator Photovoltaics

Energy Technology Data Exchange (ETDEWEB)

Ringel, Steven [The Ohio State Univ., Columbus, OH (United States); Carlin, John A [The Ohio State Univ., Columbus, OH (United States); Grassman, Tyler [The Ohio State Univ., Columbus, OH (United States)

2018-04-17

This FPACE project was motivated by the need to establish the foundational pathway to achieve concentrator solar cell efficiencies greater than 50%. At such an efficiency, DOE modeling projected that a III-V CPV module cost of $0.50/W or better could be achieved. Therefore, the goal of this project was to investigate, develop and advance a III-V/Si mulitjunction (MJ) CPV technology that can simultaneously address the primary cost barrier for III-V MJ solar cells while enabling nearly ideal MJ bandgap profiles that can yield efficiencies in excess of 50% under concentrated sunlight. The proposed methodology was based on use of our recently developed GaAsP metamorphic graded buffer as a pathway to integrate unique GaAsP and Ga-rich GaInP middle and top junctions having bandgaps that are adjustable between 1.45 – 1.65 eV and 1.9 – 2.1 eV, respectively, with an underlying, 1.1 eV active Si subcell/substrate. With this design, the Si can be an active component sub-cell due to the semi-transparent nature of the GaAsP buffer with respect to Si as well as a low-cost alternative substrate that is amenable to scaling with existing Si foundry infrastructure, providing a reduction in materials cost and a low cost path to manufacturing at scale. By backside bonding of a SiGe, a path to exceed 50% efficiency is possible. Throughout the course of this effort, an expansive range of new understanding was achieved that has stimulated worldwide efforts in III-V/Si PV R&D that spanned materials development, metamorphic device optimization, and complete III-V/Si monolithic integration. Highlights include the demonstration of the first ideal GaP/Si interfaces grown by industry-standard MOCVD processes, the first high performance metamorphic tunnel junctions designed for III-V/Si integration, record performance of specific metamorphic sub-cell designs, the first fully integrated GaInP/GaAsP/Si double (1.7 eV/1.1 eV) and triple (1.95 eV/1.5 eV/1.1 eV) junction solar cells, the first

Phase transformation during silica cluster impact on crystal silicon substrate studied by molecular dynamics simulation

International Nuclear Information System (INIS)

Chen Ruling; Luo Jianbin; Guo Dan; Lu Xinchun

2008-01-01

The process of a silica cluster impact on a crystal silicon substrate is studied by molecular dynamics simulation. At the impact loading stage, crystal silicon of the impact zone transforms to a locally ordered molten with increasing the local temperature and pressure of the impact zone. And then the transient molten forms amorphous silicon directly as the local temperature and pressure decrease at the impact unloading stage. Moreover, the phase behavior between the locally ordered molten and amorphous silicon exhibits the reversible structural transition. The transient molten contains not only lots of four-fold atom but also many three- and five-fold atoms. And the five-fold atom is similar to the mixture structure of semi-Si-II and semi-bct5-Si. The structure transformation between five- and four-fold atoms is affected by both pressure and temperature. The structure transformation between three- and four-fold atoms is affected mostly by temperature. The direct structure transformation between five- and three-fold atoms is not observed. Finally, these five- and three-fold atoms are also different from the usual five- and three-fold deficient atoms of amorphous silicon. In addition, according to the change of coordination number of atoms the impact process is divided into six stages: elastic, plastic, hysteresis, phase regressive, adhesion and cooling stages

Porous silicon-based direct hydrogen sulphide fuel cells.

Science.gov (United States)

Dzhafarov, T D; Yuksel, S Aydin

2011-10-01

In this paper, the use of Au/porous silicon/Silicon Schottky type structure, as a direct hydrogen sulphide fuel cell is demonstrated. The porous silicon filled with hydrochlorid acid was developed as a proton conduction membrane. The Au/Porous Silicon/Silicon cells were fabricated by first creating the porous silicon layer in single-crystalline Si using the anodic etching under illumination and then deposition Au catalyst layer onto the porous silicon. Using 80 mM H2S solution as fuel the open circuit voltage of 0.4 V was obtained and maximum power density of 30 W/m2 at room temperature was achieved. These results demonstrate that the Au/Porous Silicon/Silicon direct hydrogen sulphide fuel cell which uses H2S:dH2O solution as fuel and operates at room temperature can be considered as the most promising type of low cost fuel cell for small power-supply units.

All-Optical 40 Gbit/s Regenerative Wavelength Conversion Based on Cross-Phase Modulation in a Silicon Nanowire

DEFF Research Database (Denmark)

Jensen, Asger Sellerup; Hu, Hao; Ji, Hua

2013-01-01

We successfully demonstrate all-optical regeneration of a 40 Gbit/s signal based on cross-phase modulation in a silicon nanowire. Bit-error-rate measurements show an average of 1.7dB improvement in receiver sensitivity after the regeneration.......We successfully demonstrate all-optical regeneration of a 40 Gbit/s signal based on cross-phase modulation in a silicon nanowire. Bit-error-rate measurements show an average of 1.7dB improvement in receiver sensitivity after the regeneration....

Low-cost wireless voltage & current grid monitoring

Energy Technology Data Exchange (ETDEWEB)

Hines, Jacqueline [SenSanna Inc., Arnold, MD (United States)

2016-12-31

This report describes the development and demonstration of a novel low-cost wireless power distribution line monitoring system. This system measures voltage, current, and relative phase on power lines of up to 35 kV-class. The line units operate without any batteries, and without harvesting energy from the power line. Thus, data on grid condition is provided even in outage conditions, when line current is zero. This enhances worker safety by detecting the presence of voltage and current that may appear from stray sources on nominally isolated lines. Availability of low-cost power line monitoring systems will enable widespread monitoring of the distribution grid. Real-time data on local grid operating conditions will enable grid operators to optimize grid operation, implement grid automation, and understand the impact of solar and other distributed sources on grid stability. The latter will enable utilities to implement eneygy storage and control systems to enable greater penetration of solar into the grid.

Nanoscale investigation of the interface situation of plated nickel and thermally formed nickel silicide for silicon solar cell metallization

Energy Technology Data Exchange (ETDEWEB)

Mondon, A., E-mail: andrew.mondon@ise.fraunhofer.de [Fraunhofer ISE, Heidenhofst. 2, D-79110 Freiburg (Germany); Wang, D. [Karlsruhe Nano Micro Facility (KNMF), H.-von-Helmholz-Platz 1, D-76344 Eggenstein-Leopoldshafen (Germany); Zuschlag, A. [Universität Konstanz FB Physik, Jacob-Burckhardt-Str. 27, D-78464 Konstanz (Germany); Bartsch, J.; Glatthaar, M.; Glunz, S.W. [Fraunhofer ISE, Heidenhofst. 2, D-79110 Freiburg (Germany)

2014-12-30

Highlights: • Adhesion of metallization of fully plated nickel–copper contacts on silicon solar cells can be achieved by formation of nickel silicide at the cost of degraded cell performance. • Understanding of silicide growth mechanisms and controlled growth may lead to high performance together with excellent adhesion. • Silicide formation is well known from CMOS production from PVD-Ni on flat surfaces. Yet the deposition methods and therefore layer characteristics and the surface topography are different for plated metallization. • TEM analysis is performed for differently processed samples. • A nickel silicide growth model is created for plated Ni on textured silicon solar cells. - Abstract: In the context of nickel silicide formation from plated nickel layers for solar cell metallization, there are several open questions regarding contact adhesion and electrical properties. Nanoscale characterization by transmission electron microscopy has been employed to support these investigations. Interfacial oxides and silicide phases were investigated on differently prepared samples by different analytical methods associated with transmission electron microscopy analysis. Processing variations included the pre-treatment of samples before nickel plating, the used plating solution and the thermal budget for the nickel–silicon solid-state reaction. It was shown that interface oxides of only few nm thickness on both silicon and nickel silicide are present on the samples, depending on the chosen process sequence, which have been shown to play an important role in adhesion of nickel on silicide in an earlier publication. From sample pretreatment variations, conclusions about the role of an interfacial oxide in silicide formation and its influence on phase formation were drawn. Such an oxide layer hinders silicide formation except for pinhole sites. This reduces the availability of Ni and causes a silicide with low Ni content to form. Without an interfacial oxide

Ultra-low loss nano-taper coupler for Silicon-on-Insulator ridge waveguide

DEFF Research Database (Denmark)

Pu, Minhao; Liu, Liu; Ou, Haiyan

2010-01-01

A nano-taper coupler is optimized specially for the transverse-magnetic mode for interfacing light between a silicon-on-insulator ridge waveguide and a single-mode fiber. An ultra-low coupling loss of ~0.36dB is achieved for the nano-taper coupler.......A nano-taper coupler is optimized specially for the transverse-magnetic mode for interfacing light between a silicon-on-insulator ridge waveguide and a single-mode fiber. An ultra-low coupling loss of ~0.36dB is achieved for the nano-taper coupler....

In situ Measurements of Phytoplankton Fluorescence Using Low Cost Electronics

Directory of Open Access Journals (Sweden)

Dana L. Wright

2013-06-01

Full Text Available Chlorophyll a fluorometry has long been used as a method to study phytoplankton in the ocean. In situ fluorometry is used frequently in oceanography to provide depth-resolved estimates of phytoplankton biomass. However, the high price of commercially manufactured in situ fluorometers has made them unavailable to some individuals and institutions. Presented here is an investigation into building an in situ fluorometer using low cost electronics. The goal was to construct an easily reproducible in situ fluorometer from simple and widely available electronic components. The simplicity and modest cost of the sensor makes it valuable to students and professionals alike. Open source sharing of architecture and software will allow students to reconstruct and customize the sensor on a small budget. Research applications that require numerous in situ fluorometers or expendable fluorometers can also benefit from this study. The sensor costs US$150.00 and can be constructed with little to no previous experience. The sensor uses a blue LED to excite chlorophyll a and measures fluorescence using a silicon photodiode. The sensor is controlled by an Arduino microcontroller that also serves as a data logger.

Solar Grade Silicon from Agricultural By-products

Energy Technology Data Exchange (ETDEWEB)

Laine, Richard M

2012-08-20

In this project, Mayaterials developed a low cost, low energy and low temperature method of purifying rice hull ash to high purity (5-6Ns) and converting it by carbothermal reduction to solar grade quality silicon (Sipv) using a self-designed and built electric arc furnace (EAF). Outside evaluation of our process by an independent engineering firm confirms that our technology greatly lowers estimated operating expenses (OPEX) to $5/kg and capital expenses (CAPEX) to $24/kg for Sipv production, which is well below best-in-class plants using a Siemens process approach (OPEX of 14/kg and CAPEX of $87/kg, respectively). The primary limiting factor in the widespread use of photovoltaic (PV) cells is the high cost of manufacturing, compared to more traditional sources to reach 6 g Sipv/watt (with averages closer to 8+g/watt). In 2008, the spot price of Sipv rose to $450/kg. While prices have since dropped to a more reasonable $25/kg; this low price level is not sustainable, meaning the longer-term price will likely return to $35/kg. The 6-8 g Si/watt implies that the Sipv used in a module will cost $0.21-0.28/watt for the best producers (45% of the cost of a traditional solar panel), a major improvement from the cost/wafer driven by the $50/kg Si costs of early 2011, but still a major hindrance in fulfilling DOE goal of lowering the cost of solar energy below $1/watt. The solar cell industry has grown by 40% yearly for the past eight years, increasing the demand for Sipv. As such, future solar silicon price spikes are expected in the next few years. Although industry has invested billions of dollars to meet this ever-increasing demand, the technology to produce Sipv remains largely unchanged requiring the energy intensive, and chlorine dependent Siemens process or variations thereof. While huge improvements have been made, current state-of-the-art industrial plant still use 65 kWh/kg of silicon purified. Our technology offers a key distinction to other technologies as it

Black Silicon formation using dry etching for solar cells applications

International Nuclear Information System (INIS)

Murias, D.; Reyes-Betanzo, C.; Moreno, M.; Torres, A.; Itzmoyotl, A.; Ambrosio, R.; Soriano, M.; Lucas, J.; Cabarrocas, P. Roca i

2012-01-01

A study on the formation of Black Silicon on crystalline silicon surface using SF 6 /O 2 and SF 6 /O 2 /CH 4 based plasmas in a reactive ion etching (RIE) system is presented. The effect of the RF power, chamber pressure, process time, gas flow rates, and gas mixtures on the texture of silicon surface has been analyzed. Completely Black Silicon surfaces containing pyramid like structures have been obtained, using an optimized mask-free plasma process. Moreover, the Black Silicon surfaces have demonstrated average values of 1% and 4% for specular and diffuse reflectance respectively, feature that is suitable for the fabrication of low cost solar cells.

Low-cost inertial measurement unit.

Energy Technology Data Exchange (ETDEWEB)

Deyle, Travis Jay

2005-03-01

Sandia National Laboratories performs many expensive tests using inertial measurement units (IMUs)--systems that use accelerometers, gyroscopes, and other sensors to measure flight dynamics in three dimensions. For the purpose of this report, the metrics used to evaluate an IMU are cost, size, performance, resolution, upgradeability and testing. The cost of a precision IMU is very high and can cost hundreds of thousands of dollars. Thus the goals and results of this project are as follows: (1) Examine the data flow in an IMU and determine a generic IMU design. (2) Discuss a high cost IMU implementation and its theoretically achievable results. (3) Discuss design modifications that would save money for suited applications. (4) Design and implement a low cost IMU and discuss its theoretically achievable results. (5) Test the low cost IMU and compare theoretical results with empirical results. (6) Construct a more streamlined printed circuit board design reducing noise, increasing capabilities, and constructing a self-contained unit. Using these results, we can compare a high cost IMU versus a low cost IMU using the metrics from above. Further, we can examine and suggest situations where a low cost IMU could be used instead of a high cost IMU for saving cost, size, or both.

Quantifying the properties of low-cost powder metallurgy titanium alloys

International Nuclear Information System (INIS)

Bolzoni, L.; Ruiz-Navas, E.M.; Gordo, E.

2017-01-01

The extensive industrial employment of titanium is hindered by its high production costs where reduction of these costs can be achieved using cheap alloying elements and appropriate alternative processing techniques. In this work the feasibility of the production of low-cost titanium alloys is addressed by adding steel to pure titanium and processing the alloys by powder metallurgy. In particular, a spherical 4140 LCH steel powder commonly used in metal injection moulding is blended with irregular hydride-dehydride Ti. The new low-cost alloys are cold uniaxially pressed and sintered under high vacuum and show comparable properties to other wrought-equivalent and powder metallurgy titanium alloys. Differential thermal analysis and X-ray diffraction analyses confirm that Ti can tolerate the employment of iron as primary alloying element without forming detrimental TiFe-based intermetallic phases. Thus, the newly designed α+β alloys could be used for cheaper non-critical components.

Quantifying the properties of low-cost powder metallurgy titanium alloys

Energy Technology Data Exchange (ETDEWEB)

Bolzoni, L., E-mail: bolzoni.leandro@gmail.com [WaiCAM (Waikato Centre for Advanced Materials), The University of Waikato, Private Bag 3105, 3240 Hamilton (New Zealand); Ruiz-Navas, E.M.; Gordo, E. [Department of Materials Science and Engineering, University Carlos III of Madrid, Avda. de la Universidad, 30, 28911 Leganés, Madrid (Spain)

2017-02-27

The extensive industrial employment of titanium is hindered by its high production costs where reduction of these costs can be achieved using cheap alloying elements and appropriate alternative processing techniques. In this work the feasibility of the production of low-cost titanium alloys is addressed by adding steel to pure titanium and processing the alloys by powder metallurgy. In particular, a spherical 4140 LCH steel powder commonly used in metal injection moulding is blended with irregular hydride-dehydride Ti. The new low-cost alloys are cold uniaxially pressed and sintered under high vacuum and show comparable properties to other wrought-equivalent and powder metallurgy titanium alloys. Differential thermal analysis and X-ray diffraction analyses confirm that Ti can tolerate the employment of iron as primary alloying element without forming detrimental TiFe-based intermetallic phases. Thus, the newly designed α+β alloys could be used for cheaper non-critical components.

Crystalline silicon films sputtered on molybdenum A study of the silicon-molybdenum interface

Energy Technology Data Exchange (ETDEWEB)

Reinig, P.; Fenske, F.; Fuhs, W.; Schoepke, A.; Selle, B

2003-04-15

Polycrystalline silicon films were grown on molybdenum (Mo)-coated substrates at high deposition rate using the pulsed magnetron sputtering technique. Our study investigates the silicon-molybdenum interface of these films to elucidate stimulating mechanisms for an ordered crystalline silicon thin film growth. Both Auger electron spectroscopy and Rutherford backscattering reveal that at a substrate temperature as low as T{sub S}=450 deg. C during the deposition process intermixing of Si and Mo at the Si-Mo interface takes place leading to a compositional ratio Mo:Si of about 1:2. By Raman spectroscopy hexagonal {beta}-MoSi{sub 2} could be identified as the dominant phase in this intermixed region. The dependence of the resulting thickness of the reacted interface layer on the deposition conditions is not fully understood yet.

Crystalline silicon films sputtered on molybdenum A study of the silicon-molybdenum interface

International Nuclear Information System (INIS)

Reinig, P.; Fenske, F.; Fuhs, W.; Schoepke, A.; Selle, B.

2003-01-01

Polycrystalline silicon films were grown on molybdenum (Mo)-coated substrates at high deposition rate using the pulsed magnetron sputtering technique. Our study investigates the silicon-molybdenum interface of these films to elucidate stimulating mechanisms for an ordered crystalline silicon thin film growth. Both Auger electron spectroscopy and Rutherford backscattering reveal that at a substrate temperature as low as T S =450 deg. C during the deposition process intermixing of Si and Mo at the Si-Mo interface takes place leading to a compositional ratio Mo:Si of about 1:2. By Raman spectroscopy hexagonal β-MoSi 2 could be identified as the dominant phase in this intermixed region. The dependence of the resulting thickness of the reacted interface layer on the deposition conditions is not fully understood yet

Mesoporous Silicon-Based Anodes for High Capacity, High Performance Li-ion Batteries, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — A new high capacity anode composite based on mesoporous silicon is proposed. By virtue of a structure that resembles a pseudo one-dimensional phase, the active anode...

The future of nuclear power in France: an analysis of the costs of phasing-out

International Nuclear Information System (INIS)

Malischek, Raimund; Trüby, Johannes

2016-01-01

Nuclear power is an important pillar in electricity generation in France. However, the French nuclear power plant fleet is ageing, and the possibility of reducing the technology's share in power generation or even a complete phase-out has been increasingly discussed. This paper focuses on three inter-related questions: First, what are the costs of phasing-out nuclear power in France? Second, who has to bear these costs, i.e., how much of the costs will be passed on to the rest of the European power system? And third, what effect does the uncertainty regarding future nuclear policy in France have on system costs? Applying a stochastic optimization model for the European electricity system, the analysis showed that additional system costs in France of a nuclear phase-out amount up to 76 billion €_2_0_1_0. Additional costs are mostly borne by the French power system. Surprisingly, the analysis found that the costs of uncertainty are rather limited. Based on the results, it can be concluded that a commitment regarding nuclear policy reform is only mildly beneficial in terms of system cost savings. - Highlights: • Analysis of different nuclear policy and phase-out scenarios in France. • Nuclear policy uncertainty in France is treated using stochastic programming. • Costs of a nuclear phase-out in France are significant, amounting up to 76 bill €. • Costs of a phase-out are hardly passed on to the rest of the European power system. • Costs of uncertainty are low, implying little benefit of nuclear policy commitment.

Oxidation of ultra low carbon and silicon bearing steels

Energy Technology Data Exchange (ETDEWEB)

Suarez, Lucia [CTM - Technologic Centre, Materials Technology Area, Manresa, Barcelona (Spain)], E-mail: lucia.suarez@ctm.com.es; Rodriguez-Calvillo, Pablo [CTM - Technologic Centre, Materials Technology Area, Manresa, Barcelona (Spain)], E-mail: pablo.rodriguez@ctm.com.es; Houbaert, Yvan [Department of Materials Science and Engineering, University of Ghent (Belgium)], E-mail: Yvan.Houbaert@UGent.be; Colas, Rafael [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon (Mexico)], E-mail: rcolas@mail.uanl.mx

2010-06-15

Oxidation tests were carried out in samples from an ultra low carbon and two silicon bearing steels to determine the distribution and morphology of the oxide species present. The ultra low carbon steel was oxidized for short periods of time within a chamber designed to obtain thin oxide layers by controlling the atmosphere, and for longer times in an electric furnace; the silicon steels were reheated only in the electric furnace. The chamber was constructed to study the behaviour encountered during the short period of time between descaling and rolling in modern continuous mills. It was found that the oxide layers formed on the samples reheated in the electric furnace were made of different oxide species. The specimens treated in the chamber had layers made almost exclusively of wustite. Selected oxide samples were studied by scanning electron microscopy to obtain electron backscattered diffraction patterns, which were used to identify the oxide species in the layer.

Socio-Economic research on fusion SERF 3(2001-2003) External Costs of Fusion

International Nuclear Information System (INIS)

Lechon, Y.; Saez, R.; Cabal, H.

2003-01-01

Based on SEAFP project (Raeder et al, 1995) findings a preliminary assessment of environmental external costs associated to fusion power was performed under the framework of the first phase of the SERF (Socioeconomic Research on Fusion) project (Saez et al, 1999). This study showed very low external costs of fusion power compared with other traditional and new energy generating technologies. In order to update the assessment of externalities of fusion power, SERF2 project a new plant was included and an analysis of the key variables influencing the external cost was carried out. In the new phase of the SERF project, SERF3, three new additional plant models have been introduced with the aim of assessing the possibilities of silicon carbide to be used as structural material for fusion power plants. Furthermore, comparison of fusion external costs with those of other generation technologies in the state of technology development expected for 2050 has been also performed. (Author)

Mechanically flexible optically transparent porous mono-crystalline silicon substrate

KAUST Repository

Rojas, Jhonathan Prieto; Syed, Ahad A.; Hussain, Muhammad Mustafa

2012-01-01

For the first time, we present a simple process to fabricate a thin (≥5μm), mechanically flexible, optically transparent, porous mono-crystalline silicon substrate. Relying only on reactive ion etching steps, we are able to controllably peel off a thin layer of the original substrate. This scheme is cost favorable as it uses a low-cost silicon <100> wafer and furthermore it has the potential for recycling the remaining part of the wafer that otherwise would be lost and wasted during conventional back-grinding process. Due to its porosity, it shows see-through transparency and potential for flexible membrane applications, neural probing and such. Our process can offer flexible, transparent silicon from post high-thermal budget processed device wafer to retain the high performance electronics on flexible substrates. © 2012 IEEE.

GaN-on-silicon high-electron-mobility transistor technology with ultra-low leakage up to 3000 V using local substrate removal and AlN ultra-wide bandgap

Science.gov (United States)

Dogmus, Ezgi; Zegaoui, Malek; Medjdoub, Farid

2018-03-01

We report on extremely low off-state leakage current in AlGaN/GaN-on-silicon metal–insulator–semiconductor high-electron-mobility transistors (MISHEMTs) up to a high blocking voltage. Remarkably low off-state gate and drain leakage currents below 1 µA/mm up to 3 kV have been achieved owing to the use of a thick in situ SiN gate dielectric under the gate, and a local Si substrate removal technique combined with a cost effective 15-µm-thick AlN dielectric layer followed by a Cu deposition. This result establishes a manufacturable state-of-the-art high-voltage GaN-on-silicon power transistors while maintaining a low specific on-resistance of approximately 10 mΩ·cm2.

Low-Cost Precursors to Novel Hydrogen Storage Materials

International Nuclear Information System (INIS)

Linehan, Suzanne W.; Chin, Arthur A.; Allen, Nathan T.; Butterick, Robert; Kendall, Nathan T.; Klawiter, I. Leo; Lipiecki, Francis J.; Millar, Dean M.; Molzahn, David C.; November, Samuel J.; Jain, Puja; Nadeau, Sara; Mancroni, Scott

2010-01-01

From 2005 to 2010, The Dow Chemical Company (formerly Rohm and Haas Company) was a member of the Department of Energy Center of Excellence on Chemical Hydrogen Storage, which conducted research to identify and develop chemical hydrogen storage materials having the potential to achieve DOE performance targets established for on-board vehicular application. In collaboration with Center co-leads Los Alamos National Laboratory (LANL) and Pacific Northwest National Laboratory (PNNL), and other Center partners, Dow's efforts were directed towards defining and evaluating novel chemistries for producing chemical hydrides and processes for spent fuel regeneration. In Phase 1 of this project, emphasis was placed on sodium borohydride (NaBH 4 ), long considered a strong candidate for hydrogen storage because of its high hydrogen storage capacity, well characterized hydrogen release chemistry, safety, and functionality. Various chemical pathways for regenerating NaBH 4 from spent sodium borate solution were investigated, with the objective of meeting the 2010/2015 DOE targets of $2-3/gal gasoline equivalent at the pump ($2-3/kg H 2 ) for on-board hydrogen storage systems and an overall 60% energy efficiency. With the September 2007 No-Go decision for NaBH 4 as an on-board hydrogen storage medium, focus was shifted to ammonia borane (AB) for on-board hydrogen storage and delivery. However, NaBH 4 is a key building block to most boron-based fuels, and the ability to produce NaBH 4 in an energy-efficient, cost-effective, and environmentally sound manner is critical to the viability of AB, as well as many leading materials under consideration by the Metal Hydride Center of Excellence. Therefore, in Phase 2, research continued towards identifying and developing a single low-cost NaBH4 synthetic route for cost-efficient AB first fill, and conducting baseline cost estimates for first fill and regenerated AB using a variety of synthetic routes. This project utilized an engineering

Investigation of silicon/silicon germanium multiple quantum well layers in silicon avalanche photodiodes

International Nuclear Information System (INIS)

Loudon, A.Y.

2002-01-01

Silicon single photon avalanche diodes (SPADs) are currently utilised in many single photon counting systems due to their high efficiency, fast response times, low voltage operation and potentially low cost. For fibre based applications however (at wavelengths 1.3 and 1.55μm) and eye-safe wavelength applications (>1.4μm), Si devices are not suitable due to their 1.1μm absorption edge and hence greatly reduced absorption above this wavelength. InGaAs/InP or Ge SPADs absorb at these longer wavelengths, but both require cryogenic cooling for low noise operation and III-V integration with conventional Si circuitry is difficult. Si/SiGe is currently attracting great interest for optoelectronic applications and attempts to combine Si avalanche photodiodes with Si/SiGe multiple quantum well absorbing layers have been successful. Here, an effort to utilise this material system has shown an improvement in photon counting efficiency above 1.1μm of more than 30 times compared to an all-Si control device. In addition to its longer wavelength response, this Si/SiGe device has room temperature operation, low cost fabrication and is compatible with conventional Si circuitry. (author)

Low-Power Silicon-based Thermal Sensors and Actuators for Chemical Applications

NARCIS (Netherlands)

Vereshchagina, E.

2011-01-01

In the Hot Silicon project low and ultra-low-power Si-based hot surface devices have been developed, i.e. thermal sensors and actuators, for application in catalytic gas micro sensors, micro- and nano- calorimeters. This work include several scientific and technological aspects: • Design and

Experimental Implementation of a Low-Cost Single Phase Five-Level Inverter for Autonomous PV System Applications Without Batteries

Directory of Open Access Journals (Sweden)

A. Nouaiti

2018-02-01

Full Text Available This paper presents the design and the implementation of a low-cost single phase five-level inverter for photovoltaic applications. The proposed multilevel inverter is composed of a simple boost converter, a switched-capacitor converter, and an H-bridge converter. An efficient control method which associates a closed-loop regulation method with a simple maximum power point tracking (MPPT method is applied in order to allow the proposed multilevel inverter to transfer power energy from solar panels to autonomous load with no storage batteries. An experimental prototype of this inverter is fabricated at the laboratory and tested with a digital control system. Obtained results confirm the simplicity and the performance of the proposed photovoltaic system.

Tunnel Oxides Formed by Field-Induced Anodisation for Passivated Contacts of Silicon Solar Cells

Directory of Open Access Journals (Sweden)

Jingnan Tong

2018-02-01

Full Text Available Tunnel silicon oxides form a critical component for passivated contacts for silicon solar cells. They need to be sufficiently thin to allow carriers to tunnel through and to be uniform both in thickness and stoichiometry across the silicon wafer surface, to ensure uniform and low recombination velocities if high conversion efficiencies are to be achieved. This paper reports on the formation of ultra-thin silicon oxide layers by field-induced anodisation (FIA, a process that ensures uniform oxide thickness by passing the anodisation current perpendicularly through the wafer to the silicon surface that is anodised. Spectroscopical analyses show that the FIA oxides contain a lower fraction of Si-rich sub-oxides compared to wet-chemical oxides, resulting in lower recombination velocities at the silicon and oxide interface. This property along with its low temperature formation highlights the potential for FIA to be used to form low-cost tunnel oxide layers for passivated contacts of silicon solar cells.

Novel silicon phases and nanostructures for solar energy conversion

Energy Technology Data Exchange (ETDEWEB)

Wippermann, Stefan; He, Yuping; Vörös, Márton; Galli, Giulia

2016-12-01

Silicon exhibits a large variety of different bulk phases, allotropes, and composite structures, such as, e.g., clathrates or nanostructures, at both higher and lower densities compared with diamond-like Si-I. New Si structures continue to be discovered. These novel forms of Si offer exciting prospects to create Si based materials, which are non-toxic and earth-abundant, with properties tailored precisely towards specific applications. We illustrate how such novel Si based materials either in the bulk or as nanostructures may be used to significantly improve the efficiency of solar energy conversion devices.

Two-dimensional optical phased array antenna on silicon-on-insulator.

Science.gov (United States)

Van Acoleyen, Karel; Rogier, Hendrik; Baets, Roel

2010-06-21

Optical wireless links can offer a very large bandwidth and can act as a complementary technology to radiofrequency links. Optical components nowadays are however rather bulky. Therefore, we have investigated the potential of silicon photonics to fabricated integrated components for wireless optical communication. This paper presents a two-dimensional phased array antenna consisting of grating couplers that couple light off-chip. Wavelength steering of $0.24 degrees /nm is presented reducing the need of active phase modulators. The needed steering range is $1.5 degrees . The 3dB angular coverage range of these antennas is about $0.007pi sr with a directivity of more than 38dBi and antenna losses smaller than 3dB.

Reconfigurable Braille display with phase change locking

Science.gov (United States)

Soule, Cody W.; Lazarus, Nathan

2016-07-01

Automatically updated signs and displays for sighted people are common in today’s world. However, there is no cheap, low power equivalent available for the blind. This work demonstrates a reconfigurable Braille cell using the solid-to-liquid phase change of a low melting point alloy as a zero holding power locking mechanism. The device is actuated with the alloy in the liquid state, and is then allowed to solidify to lock the Braille dot in the actuated position. A low-cost manufacturing process is developed that includes molding of a rigid silicone to create pneumatic channels, and bonding of a thin membrane of a softer silicone on the surface for actuation. A plug of Field’s metal (melting point 62 °C) is placed in the pneumatic channels below each Braille dot to create the final device. The device is well suited for low duty cycle operation in applications such as signs, and is able to maintain its state indefinitely without additional power input. The display requires a pneumatic pressure of only 24 kPa for actuation, and reconfiguration has been demonstrated in less than a minute and a half.

Self-organized, effective medium black silicon antireflection structures for silicon optics in the mid-infrared

Science.gov (United States)

Steglich, Martin; Käsebier, Thomas; Kley, Ernst-Bernhard; Tünnermann, Andreas

2016-09-01

Thanks to its high quality and low cost, silicon is the material of choice for optical devices operating in the mid-infrared (MIR; 2 μm to 6 μm wavelength). Unfortunately in this spectral region, the refractive index is comparably high (about 3.5) and leads to severe reflection losses of about 30% per interface. In this work, we demonstrate that self-organized, statistical Black Silicon structures, fabricated by Inductively Coupled Plasma Reactive Ion Etching (ICP-RIE), can be used to effectively suppress interface reflection. More importantly, it is shown that antireflection can be achieved in an image-preserving, non-scattering way. This enables Black Silicon antireflection structures (ARS) for imaging applications in the MIR. It is demonstrated that specular transmittances of 97% can be easily achieved on both flat and curved substrates, e.g. lenses. Moreover, by a combined optical and morphological analysis of a multitude of different Black Silicon ARS, an effective medium criterion for the examined structures is derived that can also be used as a design rule for maximizing sample transmittance in a desired wavelength range. In addition, we show that the mechanical durability of the structures can be greatly enhanced by coating with hard dielectric materials like diamond-like carbon (DLC), hence enabling practical applications. Finally, the distinct advantages of statistical Black Silicon ARS over conventional AR layer stacks are discussed: simple applicability to topological substrates, absence of thermal stress and cost-effectiveness.

Silicon production using long flaming coal and improvement of its quality indicators

Directory of Open Access Journals (Sweden)

A. D. Mekhtiev

2014-10-01

Full Text Available The object of this study is to explore possibility of metallothermic producing of crystalline silicon using various types of carbon reducing agents as a reducing agent. The experience of existing enterprises shows that one of the best carbon reducing agents qualifying silicon electric melting technology is charcoal. On the other hand, charcoal has a number of disadvantages, such as its scarcity, high cost and low mechanical strength. Experimental melts has shown the principal possibility of producing the crystalline silicon that meets the requirements of quartz standard using low ash special coke and long-flame coal as reducing agents.

Fiscal 1983 Sunshine Program achievement report. Development for practical application of photovoltaic system (Verification of experimental low cost silicon refining - Development of technology for chlorosilane hydrogen-reduction process); 1983 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Tei cost silicon jikken seisei kensho (Chlorosilane no suiso kangen kotei no gijutsu kaihatsu)

Energy Technology Data Exchange (ETDEWEB)

NONE

1984-03-01

The effort aims to develop a reactor and its peripheral devices and process management technology therefor and to develop chlorosilane hydrogen-reduction process technology as part of the endeavors to develop a low cost production process for silicon for photovoltaic cells for the purpose of building a model plant capable of approximately 10 tons/year in terms of SOG (spin on glass) silicon. A study is made of ten operations (total reaction time of 2,264 hours), and it turns out that the electric power consumption efficiency is near the initially planned value. The yield of Si is, however, but 16.5% which is lower than the initially planned value of 20%. The value is elevated to 18% by raising the reactor temperature. To prevent overcleaning, a reactor with its internal walls experimentally coated with SiC is tested. The problems with devices other than the reactor tube are extraction rendered difficult by anomalously grown granules and processing devices choked by Si powder contained in waste gas after reaction. The first problem is settled by modifying the extraction tube but the other still needs a remedy. The produced granules are found to be high in quality. The seed producing roll crusher is operated for a total of 92 hours yielding 857kg in total. (NEDO)

Fiscal 1982 Sunshine Program achievement report. Development for practical application of photovoltaic system (Verification of experimental low cost silicon refining - Development of technology for chlorosilane hydrogen-reduction process); 1982 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Tei cost silicon jikken seisei kensho (Chlorosilane no suiso kangen kotei no gijutsu kaihatsu)

Energy Technology Data Exchange (ETDEWEB)

NONE

1983-03-01

The effort aims to develop a reactor and its peripheral devices and process management technology therefor and to develop chlorosilane hydrogen-reduction process technology as part of the endeavors to develop a low cost production process for silicon for photovoltaic cells for the purpose of building a model plant capable of approximately 10 tons/year in terms of SOG (spin on glass) silicon. The installation of a 10 tons/year class model plant for SOG-Si production is completed in July 1982. Flaws are removed after a test run, and four reactions are accomplished without damage on the reactor tube in the period from February-end to March-beginning marking 550 hours of operation in total. Thanks to the four operations, 1,086kg of granules are experimentally produced and an electric power consumption rate of 30.6KWH/kg Si is achieved, control of the flowing particle amount by reactor differential pressure is accomplished and the same of the yield by recovered silane liquid composition analysis, and essence is seized of operation control technologies. In an experimental apparatus for seed production, Si is crushed by a roll crusher and then subjected to separation by a quartz-made air elutriator. A high yield of 130kg is obtained after crushing for 75 hours. (NEDO)

Matched-filtering generalized phase contrast using LCoS pico-projectors for beam-forming

OpenAIRE

Bañas, Andrew Rafael; Palima, Darwin; Glückstad, Jesper

2012-01-01

We report on a new beam-forming system for generating high intensity programmable optical spikes using so-called matched-filtering Generalized Phase Contrast (mGPC) applying two consumer handheld pico-projectors. Such a system presents a low-cost alternative for optical trapping and manipulation, optical lattices and other beam-shaping applications usually implemented with high-end spatial light modulators. Portable pico-projectors based on liquid crystal on silicon (LCoS) devices are used as...

Deformation mechanisms of silicon during nanoscratching

Energy Technology Data Exchange (ETDEWEB)

Gassilloud, R.; Gasser, P.; Buerki, G.; Michler, J. [EMPA, Materials Science and Technology, Feuerwerkerstrasse 39, 3602 Thun (Switzerland); Ballif, C. [University of Neuchatel, A.-L. Breguet 2, 2000 Neuchatel (Switzerland)

2005-12-01

The deformation mechanisms of silicon {l_brace}001{r_brace} surfaces during nanoscratching were found to depend strongly on the loading conditions. Nanoscratches with increasing load were performed at 2 {mu}m/s (low velocity) and 100 {mu}m/s (high velocity). The load-penetration-distance curves acquired during the scratching process at low velocity suggests that two deformation regimes can be defined, an elasto-plastic regime at low loads and a fully plastic regime at high loads. High resolution scanning electron microscopy of the damaged location shows that the residual scratch morphologies are strongly influenced by the scratch velocity and the applied load. Micro-Raman spectroscopy shows that after pressure release, the deformed volume inside the nanoscratch is mainly composed of amorphous silicon and Si-XII at low scratch speeds and of amorphous silicon at high speeds. Transmission electron microscopy shows that Si nanocrystals are embedded in an amorphous matrix at low speeds, whereas at high speeds the transformed zone is completely amorphous. Furthermore, the extend of the transformed zone is almost independent of the scratching speed and is delimited by a dislocation rich area that extends about as deep as the contact radius into the surface. To explain the observed phase and defect distribution a contact mechanics based decompression model that takes into account the load, the velocity, the materials properties and the contact radius in scratching is proposed. It shows that the decompression rate is higher at low penetration depth, which is consistent with the observation of amorphous silicon in this case. The stress field under the tip is computed using an elastic contact mechanics model based on Hertz's theory. The model explains the observed shape of the transformed zone and suggests that during load increase, phase transformation takes place prior to dislocation nucleation. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Solution growth of microcrystalline silicon on amorphous substrates

Energy Technology Data Exchange (ETDEWEB)

Heimburger, Robert

2010-07-05

This work deals with low-temperature solution growth of micro-crystalline silicon on glass. The task is motivated by the application in low-cost solar cells. As glass is an amorphous material, conventional epitaxy is not applicable. Therefore, growth is conducted in a two-step process. The first step aims at the spatial arrangement of silicon seed crystals on conductive coated glass substrates, which is realized by means of vapor-liquid-solid processing using indium as the solvent. Seed crystals are afterwards enlarged by applying a specially developed steady-state solution growth apparatus. This laboratory prototype mainly consists of a vertical stack of a silicon feeding source and the solvent (indium). The growth substrate can be dipped into the solution from the top. The system can be heated to a temperature below the softening point of the utilized glass substrate. A temperature gradient between feeding source and growth substrate promotes both, supersaturation and material transport by solvent convection. This setup offers advantages over conventional liquid phase epitaxy at low temperatures in terms of achievable layer thickness and required growth times. The need for convective solute transport to gain the desired thickness of at least 50 {mu}m is emphasized by equilibrium calculations in the binary system indium-silicon. Material transport and supersaturation conditions inside the utilized solution growth crucible are analyzed. It results that the solute can be transported from the lower feeding source to the growth substrate by applying an appropriate heating regime. These findings are interpreted by means of a hydrodynamic analysis of fluid flow and supporting FEM simulation. To ensure thermodynamic stability of all materials involved during steady-state solution growth, the ternary phase equilibrium between molybdenum, indium and silicon at 600 C was considered. Based on the obtained results, the use of molybdenum disilicide as conductive coating

Mechanical grooving of oxidized porous silicon to reduce the reflectivity of monocrystalline silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Zarroug, A.; Dimassi, W.; Ouertani, R.; Ezzaouia, H. [Laboratoire de Photovoltaique, Centre des Recherches et des Technologies de l' Energie, BP. 95, Hammam-Lif 2050 (Tunisia)

2012-10-15

In this work, we are interested to use oxidized porous silicon (ox-PS) as a mask. So, we display the creating of a rough surface which enhances the absorption of incident light by solar cells and reduces the reflectivity of monocrystalline silicon (c-Si). It clearly can be seen that the mechanical grooving enables us to elaborate the texturing of monocrystalline silicon wafer. Results demonstrated that the application of a PS layer followed by a thermal treatment under O2 ambient easily gives us an oxide layer of uniform size which can vary from a nanometer to about ten microns. In addition, the Fourier transform infrared (FTIR) spectroscopy investigations of the PS layer illustrates the possibility to realize oxide layer as a mask for porous silicon. We found also that this simple and low cost method decreases the total reflectivity (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Thermal conductivity of silicon nanocrystals and polystyrene nanocomposite thin films

International Nuclear Information System (INIS)

Juangsa, Firman Bagja; Muroya, Yoshiki; Nozaki, Tomohiro; Ryu, Meguya; Morikawa, Junko

2016-01-01

Silicon nanocrystals (SiNCs) are well known for their size-dependent optical and electronic properties; they also have the potential for low yet controllable thermal properties. As a silicon-based low-thermal conductivity material is required in microdevice applications, SiNCs can be utilized for thermal insulation. In this paper, SiNCs and polymer nanocomposites were produced, and their thermal conductivity, including the density and specific heat, was measured. Measurement results were compared with thermal conductivity models for composite materials, and the comparison shows a decreasing value of the thermal conductivity, indicating the effect of the size and presence of the nanostructure on the thermal conductivity. Moreover, employing silicon inks at room temperature during the fabrication process enables a low cost of fabrication and preserves the unique properties of SiNCs. (paper)

Development of practical application technology for photovoltaic power generation systems in fiscal 1997. Development of technologies to manufacture application type thin film solar cells with new structure (development of technologies to manufacture amorphous silicon and thin film poly-crystal silicon hybrid thin film solar cells); 1997 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu. Usumaku taiyo denchi no seizo gijutsu kaihatsu, oyogata shinkozo usumaku taiyo denchi no seizo gijutsu kaihatsu (amorphous silicon/usumaku takessho silicon hybrid usumaku taiyo denchi no seizo gijutsu kaihatsu)

Energy Technology Data Exchange (ETDEWEB)

NONE

1998-03-01

Research and development was performed with an objective to manufacture amorphous silicon and thin film poly-crystal silicon hybrid solar cells with large area and at low cost, being a high-efficiency next generation solar cell. The research was performed based on a principle that low-cost substrates shall be used, that a manufacturing process capable of forming amorphous silicon films with large area shall be based on, and that silicon film with as thin as possible thickness shall be used. Fiscal 1997 has started research and development on making the cells hybrid with amorphous silicon cells. As a result of the research and development, such achievements have been attained as using texture structure on the rear layer in thin poly-crystal silicon film solar cells with a thickness of two microns, and having achieved conversion efficiency of 10.1% by optimizing the junction interface forming conditions. A photo-deterioration test was carried out on hybrid cells which combine the thin poly-crystal silicon film cells having STAR structure with the amorphous silicon cells. Stabilization efficiency of 11.5% was attained after light has been irradiated for 500 hours or longer. (NEDO)

Nickel-induced crystallization of amorphous silicon

Energy Technology Data Exchange (ETDEWEB)

Schmidt, J A; Arce, R D; Buitrago, R H [INTEC (CONICET-UNL), Gueemes 3450, S3000GLN Santa Fe (Argentina); Budini, N; Rinaldi, P, E-mail: jschmidt@intec.unl.edu.a [FIQ - UNL, Santiago del Estero 2829, S3000AOM Santa Fe (Argentina)

2009-05-01

The nickel-induced crystallization of hydrogenated amorphous silicon (a-Si:H) is used to obtain large grained polycrystalline silicon thin films on glass substrates. a-Si:H is deposited by plasma enhanced chemical vapour deposition at 200 deg. C, preparing intrinsic and slightly p-doped samples. Each sample was divided in several pieces, over which increasing Ni concentrations were sputtered. Two crystallization methods are compared, conventional furnace annealing (CFA) and rapid thermal annealing (RTA). The crystallization was followed by optical microscopy and scanning electron microscopy observations, X-ray diffraction, and reflectance measurements in the UV region. The large grain sizes obtained - larger than 100{mu}m for the samples crystallized by CFA - are very encouraging for the preparation of low-cost thin film polycrystalline silicon solar cells.

Hidden costs of low-cost screening mammography

International Nuclear Information System (INIS)

Cyrlak, D.

1987-01-01

Twenty-two hundred women in Orange County, California, took part in a low-cost mammography screening project sponsored by the American Cancer Society and the KCBS-TV. Patients were followed up by telephone and questioned about actual costs incurred as a result of screening mammography, including costs of repeated and follow-up mammograms, US examinations and surgical consultations. The total number of biopsies, cancers found, and the costs involved were investigated. The authors' results suggest that particularly in centers with a high positive call rate, the cost of screening mammograms accounts for only a small proportion of the medical costs

Design of photonic phased array switches using nano electromechanical systems on silicon-on-insulator integration platform

Science.gov (United States)

Hussein, Ali Abdulsattar

This thesis presents an introduction to the design and simulation of a novel class of integrated photonic phased array switch elements. The main objective is to use nano-electromechanical (NEMS) based phase shifters of cascaded under-etched slot nanowires that are compact in size and require a small amount of power to operate them. The structure of the switch elements is organized such that it brings the phase shifting elements to the exterior sides of the photonic circuits. The transition slot couplers, used to interconnect the phase shifters, are designed to enable biasing one of the silicon beams of each phase shifter from an electrode located at the side of the phase shifter. The other silicon beam of each phase shifter is biased through the rest of the silicon structure of the switch element, which is taken as a ground. Phased array switch elements ranging from 2x2 up to 8x8 multiple-inputs/multiple-outputs (MIMO) are conveniently designed within reasonable footprints native to the current fabrication technologies. Chapter one presents the general layout of the various designs of the switch elements and demonstrates their novel features. This demonstration will show how waveguide disturbances in the interconnecting network from conventional switch elements can be avoided by adopting an innovative design. Some possible applications for the designed switch elements of different sizes and topologies are indicated throughout the chapter. Chapter two presents the design of the multimode interference (MMI) couplers used in the switch elements as splitters, combiners and waveguide crossovers. Simulation data and design methodologies for the multimode couplers of interest are detailed in this chapter. Chapter three presents the design and analysis of the NEMS-operated phase shifters. Both simulations and numerical analysis are utilized in the design of a 0°-180° capable NEMS-operated phase shifter. Additionally, the response of some of the designed photonic phased

Design study of a low-power, low-noise front-end for multianode silicon drift detectors

International Nuclear Information System (INIS)

Caponetto, L.; Presti, D. Lo; Randazzo, N.; Russo, G.V.; Leonora, E.; Lo Nigro, L.; Petta, C.; Reito, S.; Sipala, V.

2005-01-01

The read-out for Silicon Drift Detectors in the form of a VLSI chip is presented, with a view to applications in High Energy Physics and space experiments. It is characterised by extremely low power dissipation, small noise and size

Demonstration of a Variable Phase Turbine Power System for Low Temperature Geothermal Resources

Energy Technology Data Exchange (ETDEWEB)

Hays, Lance G

2014-07-07

A variable phase turbine assembly will be designed and manufactured having a turbine, operable with transcritical, two-phase or vapor flow, and a generator – on the same shaft supported by process lubricated bearings. The assembly will be hermetically sealed and the generator cooled by the refrigerant. A compact plate-fin heat exchanger or tube and shell heat exchanger will be used to transfer heat from the geothermal fluid to the refrigerant. The demonstration turbine will be operated separately with two-phase flow and with vapor flow to demonstrate performance and applicability to the entire range of low temperature geothermal resources. The vapor leaving the turbine is condensed in a plate-fin refrigerant condenser. The heat exchanger, variable phase turbine assembly and condenser are all mounted on single skids to enable factory assembly and checkout and minimize installation costs. The system will be demonstrated using low temperature (237F) well flow from an existing large geothermal field. The net power generated, 1 megawatt, will be fed into the existing power system at the demonstration site. The system will demonstrate reliable generation of inexpensive power from low temperature resources. The system will be designed for mass manufacturing and factory assembly and should cost less than $1,200/kWe installed, when manufactured in large quantities. The estimated cost of power for 300F resources is predicted to be less than 5 cents/kWh. This should enable a substantial increase in power generated from low temperature geothermal resources.

Double side multicrystalline silicon passivation by one step stain etching-based porous silicon

Energy Technology Data Exchange (ETDEWEB)

Mohamed, Seifeddine Belhadj; Ben Rabha, Mohamed; Bessais, Brahim [Laboratoire de Photovoltaique, Centre de Recherches et des Technologies de l' Energie, Technopole de Borj-Cedria, BP 95, 2050 Hammam-Lif (Tunisia)

2012-10-15

In this paper, we investigate the effect of stain etching-based porous silicon on the double side multicrystalline silicon. Special attention is given to the use of the stain etched PS as an antireflection coating as well as for surface passivating capabilities. Stain etching of double side multicrystalline silicon leads to the formation of PS nanostructures, that dramatically decrease the surface reflectivity from 30% to about 7% and increase the effective lifetime from 1 {mu}s to 10 {mu}s at a minority carrier density ({Delta}n) of 10{sup 15} cm{sup -3}. These results let us correlate the rise of the lifetime values to the photoluminescence intensity to the hydrogen and oxide passivation as shown by FTIR analysis. This low-cost PS formation process can be applied in the photovoltaic cell technology as a standard procedure (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Rapid and Low-cost Prototyping of Medical Devices Using 3D Printed Molds for Liquid Injection Molding

Science.gov (United States)

Chung, Philip; Heller, J. Alex; Etemadi, Mozziyar; Ottoson, Paige E.; Liu, Jonathan A.; Rand, Larry; Roy, Shuvo

2014-01-01

Biologically inert elastomers such as silicone are favorable materials for medical device fabrication, but forming and curing these elastomers using traditional liquid injection molding processes can be an expensive process due to tooling and equipment costs. As a result, it has traditionally been impractical to use liquid injection molding for low-cost, rapid prototyping applications. We have devised a method for rapid and low-cost production of liquid elastomer injection molded devices that utilizes fused deposition modeling 3D printers for mold design and a modified desiccator as an injection system. Low costs and rapid turnaround time in this technique lower the barrier to iteratively designing and prototyping complex elastomer devices. Furthermore, CAD models developed in this process can be later adapted for metal mold tooling design, enabling an easy transition to a traditional injection molding process. We have used this technique to manufacture intravaginal probes involving complex geometries, as well as overmolding over metal parts, using tools commonly available within an academic research laboratory. However, this technique can be easily adapted to create liquid injection molded devices for many other applications. PMID:24998993

Combined up conversion, down conversion and down shifting photo-luminescence of low cost erbium-ytterbium co-doped porous silicon produced by stain etching

Energy Technology Data Exchange (ETDEWEB)

Diaz-Herrera, B. [Departamento de Fisica Basica, Universidad de La Laguna (ULL), Avenida Astrofisico Francisco Sanchez, 2, 38206 La Laguna, S/C de Tenerife (Spain); Linsun Power Technology (Quanzhou) Corp. Ltd. Co., Economic Development Zone, Jinjiang 362200, Fujian (China); Jimenez-Rodriguez, E. [Departamento de Fisica Basica, Universidad de La Laguna (ULL), Avenida Astrofisico Francisco Sanchez, 2, 38206 La Laguna, S/C de Tenerife (Spain); Gonzalez-Diaz, B. [Departamento de Fisica Basica, Universidad de La Laguna (ULL), Avenida Astrofisico Francisco Sanchez, 2, 38206 La Laguna, S/C de Tenerife (Spain); Instituto Tecnologico y de Energias Renovables, S.A. (ITER), Poligono Industrial de Granadilla, S/N, E38600, Granadilla de Abona (Spain); Montesdeoca-Santana, A. [Departamento de Fisica Basica, Universidad de La Laguna (ULL), Avenida Astrofisico Francisco Sanchez, 2, 38206 La Laguna, S/C de Tenerife (Spain); Velazquez, J.J. [Departamento de Fisica Fundamental y Experimental, Electronica y Sistemas, Avenida Astrofisico Francisco Sanchez, 2, 38206 La Laguna, S/C de Tenerife (Spain); Guerrero-Lemus, R., E-mail: rglemus@ull.es [Departamento de Fisica Basica, Universidad de La Laguna (ULL), Avenida Astrofisico Francisco Sanchez, 2, 38206 La Laguna, S/C de Tenerife (Spain); Fundacion de Estudios de Economia Aplicada, Programa Focus-Abengoa de Energia y Cambio Climaticoi, Jorge Juan 46, 28001 Madrid (Spain)

2011-07-01

In this work, erbium and ytterbium have been incorporated into luminescent porous silicon (PS) layers by simple impregnation of the PS substrate with a saturated nitrate solution of erbium and ytterbium. The photoluminescence of the co-doped rare earth layers have been evaluated. The doping process has been designed for its potential in silicon-based solar cell production, with the aim to improve the Shockley-Queisser limit with a reasonable cost effective method for the industry, which implies a significant enhancement of the efficiency under non-concentrated sunlight irradiation. The temperature and annealing time of the doping process were selected according to industry standards in order to ease a trial adoption. The composition was analyzed by Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy in order to characterize the doping profile. Different up-conversion and down-conversion contributions from the rare earths in the visible and IR were detected, together with the down shifting effect of the stain etched PS. There is no evidence of energy transference between the PS matrix and the rare earths.

Combined up conversion, down conversion and down shifting photo-luminescence of low cost erbium-ytterbium co-doped porous silicon produced by stain etching

International Nuclear Information System (INIS)

Diaz-Herrera, B.; Jimenez-Rodriguez, E.; Gonzalez-Diaz, B.; Montesdeoca-Santana, A.; Velazquez, J.J.; Guerrero-Lemus, R.

2011-01-01

In this work, erbium and ytterbium have been incorporated into luminescent porous silicon (PS) layers by simple impregnation of the PS substrate with a saturated nitrate solution of erbium and ytterbium. The photoluminescence of the co-doped rare earth layers have been evaluated. The doping process has been designed for its potential in silicon-based solar cell production, with the aim to improve the Shockley-Queisser limit with a reasonable cost effective method for the industry, which implies a significant enhancement of the efficiency under non-concentrated sunlight irradiation. The temperature and annealing time of the doping process were selected according to industry standards in order to ease a trial adoption. The composition was analyzed by Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy in order to characterize the doping profile. Different up-conversion and down-conversion contributions from the rare earths in the visible and IR were detected, together with the down shifting effect of the stain etched PS. There is no evidence of energy transference between the PS matrix and the rare earths.

Simultaneous Purification and Perforation of Low-Grade Si Sources for Lithium-Ion Battery Anode.

Science.gov (United States)

Jin, Yan; Zhang, Su; Zhu, Bin; Tan, Yingling; Hu, Xiaozhen; Zong, Linqi; Zhu, Jia

2015-11-11

Silicon is regarded as one of the most promising candidates for lithium-ion battery anodes because of its abundance and high theoretical capacity. Various silicon nanostructures have been heavily investigated to improve electrochemical performance by addressing issues related to structure fracture and unstable solid-electrolyte interphase (SEI). However, to further enable widespread applications, scalable and cost-effective processes need to be developed to produce these nanostructures at large quantity with finely controlled structures and morphologies. In this study, we develop a scalable and low cost process to produce porous silicon directly from low grade silicon through ball-milling and modified metal-assisted chemical etching. The morphology of porous silicon can be drastically changed from porous-network to nanowire-array by adjusting the component in reaction solutions. Meanwhile, this perforation process can also effectively remove the impurities and, therefore, increase Si purity (up to 99.4%) significantly from low-grade and low-cost ferrosilicon (purity of 83.4%) sources. The electrochemical examinations indicate that these porous silicon structures with carbon treatment can deliver a stable capacity of 1287 mAh g(-1) over 100 cycles at a current density of 2 A g(-1). This type of purified porous silicon with finely controlled morphology, produced by a scalable and cost-effective fabrication process, can also serve as promising candidates for many other energy applications, such as thermoelectrics and solar energy conversion devices.

Synergistic methods for the production of high-strength and low-cost boron carbide

Science.gov (United States)

Wiley, Charles Schenck

2011-12-01

Boron carbide (B4C) is a non-oxide ceramic in the same class of nonmetallic hard materials as silicon carbide and diamond. The high hardness, high elastic modulus and low density of B4C make it a nearly ideal material for personnel and vehicular armor. B4C plates formed via hot-pressing are currently issued to U.S. soldiers and have exhibited excellent performance; however, hot-pressed articles contain inherent processing defects and are limited to simple geometries such as low-curvature plates. Recent advances in the pressureless sintering of B4C have produced theoretically-dense and complex-shape articles that also exhibit superior ballistic performance. However, the cost of this material is currently high due to the powder shape, size, and size distribution that are required, which limits the economic feasibility of producing such a product. Additionally, the low fracture toughness of pure boron carbide may have resulted in historically lower transition velocities (the projectile velocity range at which armor begins to fail) than competing silicon carbide ceramics in high-velocity long-rod tungsten penetrator tests. Lower fracture toughness also limits multi-hit protection capability. Consequently, these requirements motivated research into methods for improving the densification and fracture toughness of inexpensive boron carbide composites that could result in the development of a superior armor material that would also be cost-competitive with other high-performance ceramics. The primary objective of this research was to study the effect of titanium and carbon additives on the sintering and mechanical properties of inexpensive B4C powders. The boron carbide powder examined in this study was a sub-micron (0.6 mum median particle size) boron carbide powder produced by H.C. Starck GmbH via a jet milling process. A carbon source in the form of phenolic resin, and titanium additives in the form of 32 nm and 0.9 mum TiO2 powders were selected. Parametric studies of

Fast-track, low-cost construction starts with the owner

International Nuclear Information System (INIS)

Smock, R.

1992-01-01

As we approach the threshold of a new round of ordering of base load generating capacity after a 15-year hiatus, power pant owners are taking a long, hard look at construction. The last round of base load construction was plagued with construction cost overruns and delays. Billions of dollars in cost overruns, many attributable to construction delays, were not allowed to be placed in utilities' rate bases. Those problems will not be tolerated in the next round. During the past few years the construction climate has changed. Non-utility power producers have demonstrated and ability to build small power plants-including many steam plants burning solid fuels-quickly and at surprisingly low costs. In this paper the cost-plus approach traditionally taken by more utilities, who will lead in the base-load construction phase, is being seriously questioned

First-order corrections to random-phase approximation GW calculations in silicon and diamond

NARCIS (Netherlands)

Ummels, R.T.M.; Bobbert, P.A.; van Haeringen, W.

1998-01-01

We report on ab initio calculations of the first-order corrections in the screened interaction W to the random-phase approximation polarizability and to the GW self-energy, using a noninteracting Green's function, for silicon and diamond. It is found that the first-order vertex and self-consistency

Low-energy nuclear physics with high-segmentation silicon arrays

International Nuclear Information System (INIS)

Betts, R.R.; Univ. of Illinois, Chicago, IL

1994-01-01

A brief history is given of silicon detectors leading up to the development of ion-implanted strip detectors. Two examples of their use in low energy nuclear physics are discussed; the search for exotic alpha-chain states in 24 Mg and studies of anomalous positron-electron pairs produced in collisions of very heavy ions

The kinetics of solid phase epitaxy in As-doped buried amorphous silicon layers

International Nuclear Information System (INIS)

McCallum, J.C.

1999-01-01

Ion implantation is the principal method used to introduce dopants into silicon for fabrication of semiconductor devices. During ion implantation, damage accumulates in the crystalline silicon lattice and amorphisation may occur over the depth range of the ions if the implant dose is sufficiently high. As device dimensions shrink, the need to produce shallower and shallower highly-doped layers increases and the probability of amorphisation also increases. To achieve dopant-activation, the amorphous or damaged material must be returned to the crystalline state by thermal annealing. Amorphous silicon layers can be crystallised by the solid-state process of solid phase epitaxy (SPE) in which the amorphous layer transforms to crystalline silicon (c-Si) layer by layer using the underlying c-Si as a seed. The atomic mechanism that is responsible for the crystallisation is thought to involve highly-localised bond-breaking and rearrangement processes at the amorphous/crystalline (a/c) interface but the defect responsible for these bond rearrangements has not yet been identified. Since the bond breaking process necessarily generates dangling bonds, it has been suggested that the crystallisation process may solely involve the formation and migration of dangling bonds at the interface. One of the key factors which may shed further light on the nature of the SPE defect is the observed dopant-dependence of the rate of crystallisation. It has been found that moderate concentrations of dopants enhance the SPE crystallisation rate while the presence of equal concentrations of an n-type and a p-type dopant (impurity compensation) returns the SPE rate to the intrinsic value. This provides crucial evidence that the SPE mechanism is sensitive to the position of the Fermi level in the bandgap of the crystalline and/or the amorphous silicon phases and may lead to identification of an energy level within the bandgap that can be associated with the defect. This paper gives details of SPE

Nanoscale investigation of the interface situation of plated nickel and thermally formed nickel silicide for silicon solar cell metallization

Science.gov (United States)

Mondon, A.; Wang, D.; Zuschlag, A.; Bartsch, J.; Glatthaar, M.; Glunz, S. W.

2014-12-01

In the context of nickel silicide formation from plated nickel layers for solar cell metallization, there are several open questions regarding contact adhesion and electrical properties. Nanoscale characterization by transmission electron microscopy has been employed to support these investigations. Interfacial oxides and silicide phases were investigated on differently prepared samples by different analytical methods associated with transmission electron microscopy analysis. Processing variations included the pre-treatment of samples before nickel plating, the used plating solution and the thermal budget for the nickel-silicon solid-state reaction. It was shown that interface oxides of only few nm thickness on both silicon and nickel silicide are present on the samples, depending on the chosen process sequence, which have been shown to play an important role in adhesion of nickel on silicide in an earlier publication. From sample pretreatment variations, conclusions about the role of an interfacial oxide in silicide formation and its influence on phase formation were drawn. Such an oxide layer hinders silicide formation except for pinhole sites. This reduces the availability of Ni and causes a silicide with low Ni content to form. Without an interfacial oxide a continuous nickel silicide of greater depth, polycrystalline modification and expected phase according to thermal budget is formed. Information about the nature of silicide growth on typical solar cell surfaces could be obtained from silicide phase and geometric observations, which were supported by FIB tomography. The theory of isotropic NiSi growth and orientation dependent NiSi2 growth was derived. By this, a very well performing low-cost metallization for silicon solar cells has been brought an important step closer to industrial introduction.

Stressing effects on the charge trapping of silicon oxynitride prepared by thermal oxidation of LPCVD Si-rich silicon nitride

International Nuclear Information System (INIS)

Choi, H.Y.; Wong, H.; Filip, V.; Sen, B.; Kok, C.W.; Chan, M.; Poon, M.C.

2006-01-01

It was recently found that the silicon oxynitride prepared by oxidation of silicon-rich silicon nitride (SRN) has several important features. The high nitrogen and extremely low hydrogen content of this material allows it to have a high dielectric constant and a low trap density. The present work investigates in further detail the electrical reliability of this kind of gate dielectric films by studying the charge trapping and interface state generation induced by constant current stressing. Capacitance-voltage (C-V) measurements indicate that for oxidation temperatures of 850 and 950 deg. C, the interface trap generation is minimal because of the high nitrogen content at the interface. At a higher oxidation temperature of 1050 deg. C, a large flatband shift is found for constant current stressing. This observation can be explained by the significant reduction of the nitrogen content and the phase separation effect at this temperature as found by X-ray photoelectron spectroscopy study. In addition to the high nitrogen content, the Si atoms at the interface exist in the form of random bonding to oxygen and nitrogen atoms for samples oxidized at 850 and 950 deg. C. This structure reduces the interface bonding constraint and results in the low interface trap density. For heavily oxidized samples the trace amount of interface nitrogen atoms exist in the form of a highly constraint SiN 4 phase and the interface oxynitride layer is a random mixture of SiO 4 and SiN 4 phases, which consequently reduces the reliability against high energy electron stressing

Waveguide silicon nitride grating coupler

Science.gov (United States)

Litvik, Jan; Dolnak, Ivan; Dado, Milan

2016-12-01

Grating couplers are one of the most used elements for coupling of light between optical fibers and photonic integrated components. Silicon-on-insulator platform provides strong confinement of light and allows high integration. In this work, using simulations we have designed a broadband silicon nitride surface grating coupler. The Fourier-eigenmode expansion and finite difference time domain methods are utilized in design optimization of grating coupler structure. The fully, single etch step grating coupler is based on a standard silicon-on-insulator wafer with 0.55 μm waveguide Si3N4 layer. The optimized structure at 1550 nm wavelength yields a peak coupling efficiency -2.6635 dB (54.16%) with a 1-dB bandwidth up to 80 nm. It is promising way for low-cost fabrication using complementary metal-oxide- semiconductor fabrication process.

Silicon fabric for multi-functional applications

KAUST Repository

Sevilla, Galo T.; Rojas, Jhonathan Prieto; Ahmed, Sally; Hussain, Aftab M.; Inayat, Salman Bin; Hussain, Muhammad Mustafa

2013-01-01

This paper reports a generic process flow to fabricate mechanically flexible and optically semi-transparent thermoelectric generators (TEGs), micro lithium-ion batteries (μLIB) and metal-oxide-semiconductor capacitors (MOSCAPs) on mono-crystalline silicon fabric platforms from standard bulk silicon (100) wafers. All the fabricated devices show outstanding mechanical flexibility and performance, making an important step towards monolithic integration of Energy Chip (self-powered devices) including energy harvesters and electronic devices on flexible platforms. We also report a recyclability process for the remaining bulk substrate after release, allowing us to achieve a low cost flexible platform for high performance applications. © 2013 IEEE.

Silicon fabric for multi-functional applications

KAUST Repository

Sevilla, Galo T.

2013-06-01

This paper reports a generic process flow to fabricate mechanically flexible and optically semi-transparent thermoelectric generators (TEGs), micro lithium-ion batteries (μLIB) and metal-oxide-semiconductor capacitors (MOSCAPs) on mono-crystalline silicon fabric platforms from standard bulk silicon (100) wafers. All the fabricated devices show outstanding mechanical flexibility and performance, making an important step towards monolithic integration of Energy Chip (self-powered devices) including energy harvesters and electronic devices on flexible platforms. We also report a recyclability process for the remaining bulk substrate after release, allowing us to achieve a low cost flexible platform for high performance applications. © 2013 IEEE.

Innovative Applications of DoD Propulsion Technology for Low-Cost Satellite Missions, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — We are proposing to leverage the Missile Defense Agency investments in high-performance propulsion systems for low-cost space missions with large Dv requirements,...

Low frequency acoustic properties of a honeycomb-silicone rubber acoustic metamaterial

Science.gov (United States)

Gao, Nansha; Hou, Hong

2017-04-01

In order to overcome the influence of mass law on traditional acoustic materials and obtain a lightweight thin-layer structure which can effectively isolate the low frequency noises, a honeycomb-silicone rubber acoustic metamaterial was proposed. Experimental results show that the sound transmission loss (STL) of acoustic metamaterial in this paper is greatly higher than that of monolayer silicone rubber metamaterial. Based on the band structure, modal shapes, as well as the sound transmission simulation, the sound insulation mechanism of the designed honeycomb-silicone rubber structure was analyzed from a new perspective, which had been validated experimentally. Side length of honeycomb structure and thickness of the unit structure would affect STL in damping control zone. Relevant conclusions and design method provide a new concept for engineering noise control.

Fiscal 1986 Sunshine Program achievement report. Development for practical application of photovoltaic system (Verification of experimental low cost silicon refining - Development of technology for chlorosilane hydrogen-reduction process); 1986 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Tei cost silicon jikken seisei kensho (Chlorosilane no suiso kangen kotei no gijutsu kaihatsu)

Energy Technology Data Exchange (ETDEWEB)

NONE

1987-03-01

The aim is to develop a fluidized bed reactor high in productivity and low in power consumption for the realization of mass production of low cost polycrystalline silicon usable for solar cell construction. An experimental device capable of producing 10 tons/year of SOG (spun on glass)-Si is built and operated. The fluidized bed reactor treating trichlorosilane as the material and the product quality achieve the initially set goals, and the essence is seized of operation management technology. In fiscal 1986, for development of the technology into a practical application technology, designs are prepared for a larger reactor unit and a large plant of the commercial scale. From the viewpoints of production efficiency and cost, the enlargement of a reactor unit is an inevitable task to discharge before practical application. There are two challenges to meet. One is the development of technologies for manufacturing large reactor tubes strong enough to withstand practical service and the other the development of a reactor structure fit for dimensional enlargement. It is then found that the concept of an economically optimum design relative to device series or device block formation is variable in the case of large plants, dependent on the scale of production, and that therefore it is necessary to arrange problems in a proper order to facilitate further deliberation. (NEDO)

Microstructure and Mechanical Behaviour of Stir-Cast Al-Mg-Sl Alloy Matrix Hybrid Composite Reinforced with Corn Cob Ash and Silicon Carbide

Directory of Open Access Journals (Sweden)

Oluwagbenga Babajide Fatile

2014-10-01

Full Text Available In this present study, the microstructural and mechanical behaviour of Al-Mg-Si alloy matrix composites reinforced with silicon carbide (SiC and Corn cob ash (An agro‑waste was investigated. This research work was aimed at assessing the suitability of developing low cost- high performance Al-Mg-Si hybrid composite. Silicon carbide (SiC particulates added with 0,1,2,3 and 4 wt% Corn cob ash (CCA were utilized to prepare 10 wt% of the reinforcing phase with Al-Mg-Si alloy as matrix using two-step stir casting method. Microstructural characterization, density measurement, estimated percent porosity, tensile testing, and micro‑hardness measurement were used to characterize the composites produced. From the results obtained, CCA has great potential to serve as a complementing reinforcement for the development of low cost‑high performance aluminum hybrid composites.

Dependences of deposition rate and OH content on concentration of added trichloroethylene in low-temperature silicon oxide films deposited using silicone oil and ozone gas

Science.gov (United States)

Horita, Susumu; Jain, Puneet

2018-03-01

We investigated the dependences of the deposition rate and residual OH content of SiO2 films on the concentration of trichloroethylene (TCE), which was added during deposition at low temperatures of 160-260 °C with the reactant gases of silicone oil (SO) and O3. The deposition rate depends on the TCE concentration and is minimum at a concentration of ˜0.4 mol/m3 at 200 °C. The result can be explained by surface and gas-phase reactions. Experimentally, we also revealed that the thickness profile is strongly affected by gas-phase reaction, in which the TCE vapor was blown directly onto the substrate surface, where it mixed with SO and O3. Furthermore, it was found that adding TCE vapor reduces residual OH content in the SiO2 film deposited at 200 °C because TCE enhances the dehydration reaction.

Formation of microchannels from low-temperature plasma-deposited silicon oxynitride

Science.gov (United States)

Matzke, Carolyn M.; Ashby, Carol I. H.; Bridges, Monica M.; Manginell, Ronald P.

2000-01-01

A process for forming one or more fluid microchannels on a substrate is disclosed that is compatible with the formation of integrated circuitry on the substrate. The microchannels can be formed below an upper surface of the substrate, above the upper surface, or both. The microchannels are formed by depositing a covering layer of silicon oxynitride over a mold formed of a sacrificial material such as photoresist which can later be removed. The silicon oxynitride is deposited at a low temperature (.ltoreq.100.degree. C.) and preferably near room temperature using a high-density plasma (e.g. an electron-cyclotron resonance plasma or an inductively-coupled plasma). In some embodiments of the present invention, the microchannels can be completely lined with silicon oxynitride to present a uniform material composition to a fluid therein. The present invention has applications for forming microchannels for use in chromatography and electrophoresis. Additionally, the microchannels can be used for electrokinetic pumping, or for localized or global substrate cooling.

Ultra-low-loss inverted taper coupler for silicon-on-insulator ridge waveguide

DEFF Research Database (Denmark)

Pu, Minhao; Liu, Liu; Ou, Haiyan

2010-01-01

An ultra-low-loss coupler for interfacing a silicon-on-insulator ridge waveguide and a single-mode fiber in both polarizations is presented. The inverted taper coupler, embedded in a polymer waveguide, is optimized for both the transverse-magnetic and transverse-electric modes through tapering...... the width of the silicon-on-insulator waveguide from 450 nm down to less than 15 nm applying a thermal oxidation process. Two inverted taper couplers are integrated with a 3-mm long silicon-on-insulator ridge waveguide in the fabricated sample. The measured coupling losses of the inverted taper coupler...... for transverse-magnetic and transverse-electric modes are ~0.36 dB and ~0.66 dB per connection, respectively....

A review of ordering phenomena in iron-silicon alloys

Directory of Open Access Journals (Sweden)

González, F.

2013-06-01

Full Text Available Silicon steel is an industrially-desired alloy of iron and silicon, characterised by soft magnetic properties, low eddy-current losses, and low magnetostriction. Silicon steels have narrow hysteresis cycles, making them particularly advantageous in applications using electromagnetic fields, such as transformers, generators, electric motor cores, and few other components in industry. Despite its incontestable industrial value, there is not much agreement on the atomic structure of silicon steel. Gaining better understanding of e.g. ordering processes in Fe-Si alloys could not only explain their magnetic properties, but also open opportunities to reduce their weaker characteristics, such as brittleness that adversely affects silicon steel workability and its associated high production costs. This review summarises the state-of-the-art knowledge about ordering in silicon steel and describes the most relevant experimental techniques used for studying its microstructure. In addition, the process of building the iron rich part of the Fe-Si phase diagram is explained. Lastly, the influence of order on the alloy’s magnetic and mechanical properties is illustrated.El acero al silicio es una aleación de importancia industrial, caracterizada por propiedades magnéticas blandas, bajas pérdidas por corrientes de Foucault y baja magnetostricción. Los aceros al silicio tienen ciclo de histéresis estrecho, lo que es una ventaja en aplicaciones con campos electromagnéticos, como transformadores, generadores, núcleos de motores eléctricos y otros componentes industriales. A pesar de su incomparable valor industrial, no hay convenio sobre la estructura atómica del acero al silicio. Obtener mayor conocimiento sobre los procesos de orden no sólo podría explicar las propiedades magnéticas sino que también podría abrir vías para la reducción de sus características más débiles, como su fragilidad, la cual afecta negativamente a la fabricación del

Low-Cost Precursors to Novel Hydrogen Storage Materials

Energy Technology Data Exchange (ETDEWEB)

Suzanne W. Linehan; Arthur A. Chin; Nathan T. Allen; Robert Butterick; Nathan T. Kendall; I. Leo Klawiter; Francis J. Lipiecki; Dean M. Millar; David C. Molzahn; Samuel J. November; Puja Jain; Sara Nadeau; Scott Mancroni

2010-12-31

From 2005 to 2010, The Dow Chemical Company (formerly Rohm and Haas Company) was a member of the Department of Energy Center of Excellence on Chemical Hydrogen Storage, which conducted research to identify and develop chemical hydrogen storage materials having the potential to achieve DOE performance targets established for on-board vehicular application. In collaboration with Center co-leads Los Alamos National Laboratory (LANL) and Pacific Northwest National Laboratory (PNNL), and other Center partners, Dow's efforts were directed towards defining and evaluating novel chemistries for producing chemical hydrides and processes for spent fuel regeneration. In Phase 1 of this project, emphasis was placed on sodium borohydride (NaBH{sub 4}), long considered a strong candidate for hydrogen storage because of its high hydrogen storage capacity, well characterized hydrogen release chemistry, safety, and functionality. Various chemical pathways for regenerating NaBH{sub 4} from spent sodium borate solution were investigated, with the objective of meeting the 2010/2015 DOE targets of $2-3/gal gasoline equivalent at the pump ($2-3/kg H{sub 2}) for on-board hydrogen storage systems and an overall 60% energy efficiency. With the September 2007 No-Go decision for NaBH{sub 4} as an on-board hydrogen storage medium, focus was shifted to ammonia borane (AB) for on-board hydrogen storage and delivery. However, NaBH{sub 4} is a key building block to most boron-based fuels, and the ability to produce NaBH{sub 4} in an energy-efficient, cost-effective, and environmentally sound manner is critical to the viability of AB, as well as many leading materials under consideration by the Metal Hydride Center of Excellence. Therefore, in Phase 2, research continued towards identifying and developing a single low-cost NaBH4 synthetic route for cost-efficient AB first fill, and conducting baseline cost estimates for first fill and regenerated AB using a variety of synthetic routes. This

Low dose radiation damage effects in silicon strip detectors

International Nuclear Information System (INIS)

Wiącek, P.; Dąbrowski, W.

2016-01-01

The radiation damage effects in silicon segmented detectors caused by X-rays have become recently an important research topic driven mainly by development of new detectors for applications at the European X-ray Free Electron Laser (E-XFEL). However, radiation damage in silicon strip is observed not only after extreme doses up to 1 GGy expected at E-XFEL, but also at doses in the range of tens of Gy, to which the detectors in laboratory instruments like X-ray diffractometers or X-ray spectrometers can be exposed. In this paper we report on investigation of radiation damage effects in a custom developed silicon strip detector used in laboratory diffractometers equipped with X-ray tubes. Our results show that significant degradation of detector performance occurs at low doses, well below 200 Gy, which can be reached during normal operation of laboratory instruments. Degradation of the detector energy resolution can be explained by increasing leakage current and increasing interstrip capacitance of the sensor. Another observed effect caused by accumulation of charge trapped in the surface oxide layer is change of charge division between adjacent strips. In addition, we have observed unexpected anomalies in the annealing process.

Low dose radiation damage effects in silicon strip detectors

Science.gov (United States)

Wiącek, P.; Dąbrowski, W.

2016-11-01

The radiation damage effects in silicon segmented detectors caused by X-rays have become recently an important research topic driven mainly by development of new detectors for applications at the European X-ray Free Electron Laser (E-XFEL). However, radiation damage in silicon strip is observed not only after extreme doses up to 1 GGy expected at E-XFEL, but also at doses in the range of tens of Gy, to which the detectors in laboratory instruments like X-ray diffractometers or X-ray spectrometers can be exposed. In this paper we report on investigation of radiation damage effects in a custom developed silicon strip detector used in laboratory diffractometers equipped with X-ray tubes. Our results show that significant degradation of detector performance occurs at low doses, well below 200 Gy, which can be reached during normal operation of laboratory instruments. Degradation of the detector energy resolution can be explained by increasing leakage current and increasing interstrip capacitance of the sensor. Another observed effect caused by accumulation of charge trapped in the surface oxide layer is change of charge division between adjacent strips. In addition, we have observed unexpected anomalies in the annealing process.

The rate-limiting mechanism of transition metal gettering in multicrystalline silicon

International Nuclear Information System (INIS)

McHugo, S.A.; Thompson, A.C.; Imaizumi, M.

1997-01-01

Multicrystalline silicon is a very interesting material for terrestrial solar cells. Its low cost and respectable energy conversion efficiency (12-15%) makes it arguably the most cost competitive material for large-volume solar power generation. However, the solar cell efficiency of this material is severely degraded by regions of high minority carrier recombination which have been shown to possess both dislocations and microdefects. These structural defects are known to increase in recombination activity with transition metal decoration. Therefore, gettering of metal impurities from the material would be expected to greatly enhance solar cell performance. Contrary to this rationale, experiments using frontside phosphorus and/or backside aluminum treatments have been found to improve regions with low recombination activity while having little or no effect on the high recombination regions and in turn only slightly improving the overall cell performance. The goal of this research is to determine the mechanism by which gettering is ineffectual on these high recombination regions. The authors have performed studies on integrated circuit (IC) quality single crystal and multicrystalline solar cell silicon (mc-silicon) in the as-grown state and after a variety of processing/gettering steps. With Surface Photovoltage measurements of the minority carrier diffusion length which is inversely proportional to carrier recombination, they have seen that aluminum gettering is effective for improving IC quality material but ineffective for improving the regions of initially low diffusion lengths (high recombination rates) in mc-silicon. Of particular interest is the great increase in diffusion length for IC material as compared to the mc-silicon. Clearly the IC material has benefited to a greater extent from the gettering procedure than the mc-silicon

A low-cost, Nist-traceable, high performance dielectric resonator Master Oscillator

International Nuclear Information System (INIS)

Doolittle, L.R.; Hovater, C.; Merminga, L.; Musson, J.; Wiseman, W.

1999-01-01

The current CEBAF Master Oscillator (MO) uses a quartz-based 10 MHz reference to synthesize 70 MHz and 499 MHz, which are then distributed to each of the klystron galleries on site. Due to the specialized nature of CEBAF's MO requirements, it has been determined that an in-house design and fabrication would provide a cost-effective alternative to purchasing or modifying vendor equipment. A Global Positioning System (GPS) disciplined, Direct Digital Synthesis (DDS) based MO is proposed which incorporates low-cost consumer RF components, designed for cellular communications. A 499 MHz Dielectric Resonant Oscillator (DRO) Voltage Controlled Oscillator (VCO) is phase-locked to a GPS-disciplined 10 MHz reference, and micro-tuned via a DDS, in an effort to achieve the lowest phase noise possible

Appearance of low signal intensity lines in MRI of silicone breast implants.

Science.gov (United States)

Stroman, P W; Rolland, C; Dufour, M; Grondin, P; Guidoin, R G

1996-05-01

Magnetic resonance (MR) images of five explanted mammary prostheses were obtained with a 1.5 T GE Signa system using a conventional spin-echo pulse sequence, in order to investigate the low-intensity curvilinear lines which may be observed in MR images of silicone gel-filled breast implants under pressure from fibrous capsules. MR images showed ellipsoid prostheses, often containing multiple low-intensity curvilinear lines which in some cases presented an appearance very similar to that of the linguine sign. Upon opening the fibrous capsules, however, all of the prostheses were found to be completely intact demonstrating that the appearance of multiple low signal intensity curvilinear lines in MR images of silicone gel-filled prostheses is not necessarily a sign of prosthesis rupture. The MR image features which are specific to the linguine sign must be more precisely defined.

Polycrystalline indium phosphide on silicon by indium assisted growth in hydride vapor phase epitaxy

Energy Technology Data Exchange (ETDEWEB)

Metaferia, Wondwosen; Sun, Yan-Ting, E-mail: yasun@kth.se; Lourdudoss, Sebastian [Laboratory of Semiconductor Materials, Department of Materials and Nano Physics, KTH—Royal Institute of Technology, Electrum 229, 164 40 Kista (Sweden); Pietralunga, Silvia M. [CNR-Institute for Photonics and Nanotechnologies, P. Leonardo da Vinci, 32 20133 Milano (Italy); Zani, Maurizio; Tagliaferri, Alberto [Department of Physics Politecnico di Milano, P. Leonardo da Vinci, 32 20133 Milano (Italy)

2014-07-21

Polycrystalline InP was grown on Si(001) and Si(111) substrates by using indium (In) metal as a starting material in hydride vapor phase epitaxy (HVPE) reactor. In metal was deposited on silicon substrates by thermal evaporation technique. The deposited In resulted in islands of different size and was found to be polycrystalline in nature. Different growth experiments of growing InP were performed, and the growth mechanism was investigated. Atomic force microscopy and scanning electron microscopy for morphological investigation, Scanning Auger microscopy for surface and compositional analyses, powder X-ray diffraction for crystallinity, and micro photoluminescence for optical quality assessment were conducted. It is shown that the growth starts first by phosphidisation of the In islands to InP followed by subsequent selective deposition of InP in HVPE regardless of the Si substrate orientation. Polycrystalline InP of large grain size is achieved and the growth rate as high as 21 μm/h is obtained on both substrates. Sulfur doping of the polycrystalline InP was investigated by growing alternating layers of sulfur doped and unintentionally doped InP for equal interval of time. These layers could be delineated by stain etching showing that enough amount of sulfur can be incorporated. Grains of large lateral dimension up to 3 μm polycrystalline InP on Si with good morphological and optical quality is obtained. The process is generic and it can also be applied for the growth of other polycrystalline III–V semiconductor layers on low cost and flexible substrates for solar cell applications.

Process research of non-Czochralski silicon material

Science.gov (United States)

Campbell, R. B.

1986-01-01

Simultaneous diffusion of liquid precursors containing phosphorus and boron into dendritic web silicon to form solar cell structures was investigated. A simultaneous junction formation techniques was developed. It was determined that to produce high quality cells, an annealing cycle (nominal 800 C for 30 min) should follow the diffusion process to anneal quenched-in defects. Two ohm-cm n-base cells were fabricated with efficiencies greater than 15%. A cost analysis indicated that the simultansous diffusion process costs can be as low as 65% of the costs of the sequential diffusion process.

Deployment Considerations for Low-cost Air Quality Sensor Networks; Examining Spatial Variability of Gas-Phase Pollutants Around a Building in Los Angeles

Science.gov (United States)

Collier-Oxandale, A. M.; Hannigan, M.; Casey, J. G.; Johnston, J.; Coffey, E.; Thorson, J.

2017-12-01

The field of low-cost air quality sensing technologies is growing rapidly through the continual development of new sensors, increased research into sensor performance, and more and more community groups utilizing sensors to investigate local issues. However, as this technology is still in an exploratory phase, there are few `best-practices' available to serve as guidelines for these projects and the standardization of some procedures could benefit the research community as a whole. For example, deployment considerations such as where and how to place a monitor at a given location are often determined by accessibility and safety, power-requirements, and what is an ideal for sampling the target pollutant. Using data from multiple gas-phase sensors, we will examine the importance of siting considerations for low-cost monitoring systems. During a sampling campaign in Los Angeles, a subset of monitors was deployed at one field site to explore the variability in air quality sensor data around a single building. The site is a three story, multi-family housing unit in a primarily residential neighborhood that is near two major roadways and other potential sources of pollution. Five low-cost monitors were co-located prior to and following the field deployment. During the approximately 2.5-month deployment, these monitors were placed at various heights above street level, on different sides of the building, and on the roof. In our analysis, we will examine how monitor placement affects a sensor's ability to detect local verses more regional trends and how this building-scale spatial variability changes over time. Additionally, examining data from VOC sensors (quantified for methane and total non-methane hydrocarbon signals) and O3 sensors will allow us to compare the variability of primary and secondary pollutants. An outcome of this analysis may include guidelines or `best practices' for siting sensors that could aid in ensuring the collection of high quality field data

Thin Single Crystal Silicon Solar Cells on Ceramic Substrates: November 2009 - November 2010

Energy Technology Data Exchange (ETDEWEB)

Kumar, A.; Ravi, K. V.

2011-06-01

In this program we have been developing a technology for fabricating thin (< 50 micrometres) single crystal silicon wafers on foreign substrates. We reverse the conventional approach of depositing or forming silicon on foreign substrates by depositing or forming thick (200 to 400 micrometres) ceramic materials on high quality single crystal silicon films ~ 50 micrometres thick. Our key innovation is the fabrication of thin, refractory, and self-adhering 'handling layers or substrates' on thin epitaxial silicon films in-situ, from powder precursors obtained from low cost raw materials. This 'handling layer' has sufficient strength for device and module processing and fabrication. Successful production of full sized (125 mm X 125 mm) silicon on ceramic wafers with 50 micrometre thick single crystal silicon has been achieved and device process flow developed for solar cell fabrication. Impurity transfer from the ceramic to the silicon during the elevated temperature consolidation process has resulted in very low minority carrier lifetimes and resulting low cell efficiencies. Detailed analysis of minority carrier lifetime, metals analysis and device characterization have been done. A full sized solar cell efficiency of 8% has been demonstrated.

Performance of semiconductor radiation sensors for simple and low-cost radiation detector

International Nuclear Information System (INIS)

Tanimura, Yoshihiko; Birumachi, Atsushi; Yoshida, Makoto; Watanabe, Tamaki

2008-01-01

In order to develop a simple but reliable radiation detector for the general public, photon detection performances of radiation sensors have been studied in photon calibration fields and by Monte Carlo simulations. A silicon p-i-n photodiode and a CdTe detector were selected for the low cost sensors. Their energy responses to ambient dose equivalent H * (10) were evaluated over the energy range from 60 keV to 2 MeV. The response of the CdTe decreases markedly with increasing photon energy. On the other hand, the photodiode has the advantage of almost flat response above 150 keV. The sensitivities of these sensors are 4 to 6 cpm for the natural radiation. Detection limits of the radiation level are low enough to know the extreme increase of radiation due to emergency situations of nuclear power plants, fuel treatment facilities and so on. (author)

Review of New Technology for Preparing Crystalline Silicon Solar Cell Materials by Metallurgical Method

Science.gov (United States)

Li, Man; Dai, Yongnian; Ma, Wenhui; Yang, Bin; Chu, Qingmei

2017-11-01

The goals of greatly reducing the photovoltaic power cost and making it less than that of thermal power to realize photovoltaic power grid parity without state subsidies are focused on in this paper. The research status, key technologies and development of the new technology for preparing crystalline silicon solar cell materials by metallurgical method at home and abroad are reviewed. The important effects of impurities and defects in crystalline silicon on its properties are analysed. The importance of new technology on reducing production costs and improving its quality to increase the cell conversion efficiency are emphasized. The previous research results show that the raw materials of crystalline silicon are extremely abundant. The product of crystalline silicon can meet the quality requirements of solar cell materials: Si ≥ 6 N, P 1 Ω cm, minority carrier life > 25 μs cell conversion efficiency of about 19.3%, the product costs energy consumption energy consumption, low carbon and sustainable development are prospected.

High Temperature All Silicon-Carbide (SiC) DC Motor Drives for Venus Exploration Vehicles, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — This Small Business Innovation Research Phase I project seeks to prove the feasibility of creating high-temperature silicon-carbide (SiC) based motor drives for...

Tin - an unlikely ally for silicon field effect transistors?

KAUST Repository

Hussain, Aftab M.

2014-01-13

We explore the effectiveness of tin (Sn), by alloying it with silicon, to use SiSn as a channel material to extend the performance of silicon based complementary metal oxide semiconductors. Our density functional theory based simulation shows that incorporation of tin reduces the band gap of Si(Sn). We fabricated our device with SiSn channel material using a low cost and scalable thermal diffusion process of tin into silicon. Our high-κ/metal gate based multi-gate-field-effect-transistors using SiSn as channel material show performance enhancement, which is in accordance with the theoretical analysis. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Corrugation Architecture Enabled Ultraflexible Wafer-Scale High-Efficiency Monocrystalline Silicon Solar Cell

KAUST Repository

Bahabry, Rabab R.

2018-01-02

Advanced classes of modern application require new generation of versatile solar cells showcasing extreme mechanical resilience, large-scale, low cost, and excellent power conversion efficiency. Conventional crystalline silicon-based solar cells offer one of the most highly efficient power sources, but a key challenge remains to attain mechanical resilience while preserving electrical performance. A complementary metal oxide semiconductor-based integration strategy where corrugation architecture enables ultraflexible and low-cost solar cell modules from bulk monocrystalline large-scale (127 × 127 cm) silicon solar wafers with a 17% power conversion efficiency. This periodic corrugated array benefits from an interchangeable solar cell segmentation scheme which preserves the active silicon thickness of 240 μm and achieves flexibility via interdigitated back contacts. These cells can reversibly withstand high mechanical stress and can be deformed to zigzag and bifacial modules. These corrugation silicon-based solar cells offer ultraflexibility with high stability over 1000 bending cycles including convex and concave bending to broaden the application spectrum. Finally, the smallest bending radius of curvature lower than 140 μm of the back contacts is shown that carries the solar cells segments.

Corrugation Architecture Enabled Ultraflexible Wafer-Scale High-Efficiency Monocrystalline Silicon Solar Cell

KAUST Repository

Bahabry, Rabab R.; Kutbee, Arwa T.; Khan, Sherjeel M.; Sepulveda, Adrian C.; Wicaksono, Irmandy; Nour, Maha A.; Wehbe, Nimer; Almislem, Amani Saleh Saad; Ghoneim, Mohamed T.; Sevilla, Galo T.; Syed, Ahad; Shaikh, Sohail F.; Hussain, Muhammad Mustafa

2018-01-01

Advanced classes of modern application require new generation of versatile solar cells showcasing extreme mechanical resilience, large-scale, low cost, and excellent power conversion efficiency. Conventional crystalline silicon-based solar cells offer one of the most highly efficient power sources, but a key challenge remains to attain mechanical resilience while preserving electrical performance. A complementary metal oxide semiconductor-based integration strategy where corrugation architecture enables ultraflexible and low-cost solar cell modules from bulk monocrystalline large-scale (127 × 127 cm) silicon solar wafers with a 17% power conversion efficiency. This periodic corrugated array benefits from an interchangeable solar cell segmentation scheme which preserves the active silicon thickness of 240 μm and achieves flexibility via interdigitated back contacts. These cells can reversibly withstand high mechanical stress and can be deformed to zigzag and bifacial modules. These corrugation silicon-based solar cells offer ultraflexibility with high stability over 1000 bending cycles including convex and concave bending to broaden the application spectrum. Finally, the smallest bending radius of curvature lower than 140 μm of the back contacts is shown that carries the solar cells segments.

Low-temperature strain gauges based on silicon whiskers

Directory of Open Access Journals (Sweden)

Druzhinin A. A.

2008-08-01

Full Text Available To create low-temperature strain gauges based on p-type silicon whiskers tensoresistive characteristics of these crystals in 4,2—300 K temperature range were studied. On the basis of p-type Si whiskers with different resistivity the strain gauges for different materials operating at cryogenic temperatures with extremely high gauge factor at 4,2 K were developed, as well as strain gauges operating at liquid helium temperatures in high magnetic fields.

Crystal growth for high-efficiency silicon solar cells workshop: Summary

Science.gov (United States)

Dumas, K. A.

1985-01-01

The state of the art in the growth of silicon crystals for high-efficiency solar cells are reviewed, sheet requirements are defined, and furture areas of research are identified. Silicon sheet material characteristics that limit cell efficiencies and yields were described as well as the criteria for the ideal sheet-growth method. The device engineers wish list to the material engineer included: silicon sheet with long minority carrier lifetime that is uniform throughout the sheet, and which doesn't change during processing; and sheet material that stays flat throughout device processing, has uniform good mechanical strength, and is low cost. Impurities in silicon solar cells depreciate cell performance by reducing diffusion length and degrading junctions. The impurity behavior, degradation mechanisms, and variations in degradation threshold with diffusion length for silicon solar cells were described.

Antimicrobial activity of silica coated silicon nano-tubes (SCSNT) and silica coated silicon nano-particles (SCSNP) synthesized by gas phase condensation.

Science.gov (United States)

Tank, Chiti; Raman, Sujatha; Karan, Sujoy; Gosavi, Suresh; Lalla, Niranjan P; Sathe, Vasant; Berndt, Richard; Gade, W N; Bhoraskar, S V; Mathe, Vikas L

2013-06-01

Silica-coated, silicon nanotubes (SCSNTs) and silica-coated, silicon nanoparticles (SCSNPs) have been synthesized by catalyst-free single-step gas phase condensation using the arc plasma process. Transmission electron microscopy and scanning tunneling microscopy showed that SCSNTs exhibited a wall thickness of less than 1 nm, with an average diameter of 14 nm and a length of several 100 nm. Both nano-structures had a high specific surface area. The present study has demonstrated cheaper, resistance-free and effective antibacterial activity in silica-coated silicon nano-structures, each for two Gram-positive and Gram-negative bacteria. The minimum inhibitory concentration (MIC) was estimated, using the optical densitometric technique, and by determining colony-forming units. The MIC was found to range in the order of micrograms, which is comparable to the reported MIC of metal oxides for these bacteria. SCSNTs were found to be more effective in limiting the growth of multidrug-resistant Staphylococcus aureus over SCSNPs at 10 μg/ml (IC 50 = 100 μg/ml).

Towards Optical Partial Discharge Detection with Micro Silicon Photomultipliers

Directory of Open Access Journals (Sweden)

Ming Ren

2017-11-01

Full Text Available Optical detection is reliable in intrinsically characterizing partial discharges (PDs. Because of the great volume and high-level power supply of the optical devices that can satisfy the requirements in photosensitivity, optical PD detection can merely be used in laboratory studies. To promote the practical application of the optical approach in an actual power apparatus, a silicon photomultiplier (SiPM-based PD sensor is introduced in this paper, and its basic properties, which include the sensitivity, pulse resolution, correlation with PD severity, and electromagnetic (EM interference immunity, are experimentally evaluated. The stochastic phase-resolved PD pattern (PRPD for three typical insulation defects are obtained by SiPM PD detector and are compared with those obtained using a high-frequency current transformer (HFCT and a vacuum photomultiplier tube (PMT. Because of its good performances in the above aspects and its additional advantages, such as the small size, low power supply, and low cost, SiPM offers great potential in practical optical PD monitoring.

Formation of nanocrystals embedded in a silicon nitride film at a low temperature ({<=}200 deg. C)

Energy Technology Data Exchange (ETDEWEB)

Lee, Kyoung-Min; Kim, Tae-Hwan [Department of Nano Science and Technology, University of Seoul, Seoul 130-743 (Korea, Republic of); Hong, Wan-Shick [Department of Nano Science and Technology, University of Seoul, Seoul 130-743 (Korea, Republic of)], E-mail: wshong@uos.ac.kr

2008-12-15

Silicon-rich silicon nitride films with embedded silicon nanocrystals (Si NCs) were fabricated successfully on plastic substrates at a low temperature by catalytic chemical vapor deposition. A mixture of SiH{sub 4}, NH{sub 3} and H{sub 2} was used as a source gas. Formation of the silicon nanocrystals was analyzed by photoluminescence spectra and was confirmed by transmission electron microscopy. The formation of Si NCs required an H{sub 2}/SiH{sub 4} mixture ratio that was higher than four.

Low cost sensors: Field evaluations and multi-sensor approaches for emissions factors

Science.gov (United States)

The development, and application of low cost sensors to measure both particulate and gas-phase air pollutants is poised to explode over the next several years. The need for the sensors is driven by poor air quality experienced in inhabited regions throughout the world, in both de...

Preventing light-induced degradation in multicrystalline silicon

Science.gov (United States)

Lindroos, J.; Boulfrad, Y.; Yli-Koski, M.; Savin, H.

2014-04-01

Multicrystalline silicon (mc-Si) is currently dominating the silicon solar cell market due to low ingot costs, but its efficiency is limited by transition metals, extended defects, and light-induced degradation (LID). LID is traditionally associated with a boron-oxygen complex, but the origin of the degradation in the top of the commercial mc-Si brick is revealed to be interstitial copper. We demonstrate that both a large negative corona charge and an aluminum oxide thin film with a built-in negative charge decrease the interstitial copper concentration in the bulk, preventing LID in mc-Si.

Electrical properties of pressure quenched silicon by thermal spraying

International Nuclear Information System (INIS)

Tan, S.Y.; Gambino, R.J.; Sampath, S.; Herman, H.

2007-01-01

High velocity thermal spray deposition of polycrystalline silicon film onto single crystal substrates, yields metastable high pressure forms of silicon in nanocrystalline form within the deposit. The phases observed in the deposit include hexagonal diamond-Si, R-8, BC-8 and Si-IX. The peculiar attribute of this transformation is that it occurs only on orientation silicon substrate. The silicon deposits containing the high pressure phases display a substantially higher electrical conductivity. The resistivity profile of the silicon deposit containing shock induced metastable silicon phases identified by X-ray diffraction patterns. The density of the pressure induced polymorphic silicon is higher at deposit/substrate interface. A modified two-layer model is presented to explain the resistivity of the deposit impacted by the pressure induced polymorphic silicon generated by the thermal spraying process. The pressure quenched silicon deposits on the p - silicon substrate, with or without metastable phases, display the barrier potential of about 0.72 eV. The measured hall mobility value of pressure quenched silicon deposits is in the range of polycrystalline silicon. The significance of this work lies in the fact that the versatility of thermal spray may enable applications of these high pressure forms of silicon

Silicon-conductive nanopaper for Li-ion batteries

KAUST Repository

Hu, Liangbing

2013-01-01

There is an increasing interest in the development of thin, flexible energy storage devices for new applications. For large scale and low cost devices, structures with the use of earth abundant materials are attractive. In this study, we fabricated flexible and conductive nanopaper aerogels with incorporated carbon nanotubes (CNT). Such conductive nanopaper is made from aqueous dispersions with dispersed CNT and cellulose nanofibers. Such aerogels are highly porous with open channels that allow the deposition of a thin-layer of silicon through a plasma-enhanced CVD (PECVD) method. Meanwhile, the open channels also allow for an excellent ion accessibility to the surface of silicon. We demonstrated that such lightweight and flexible Si-conductive nanopaper structure performs well as Li-ion battery anodes. A stable capacity of 1200. mA. h/g for 100 cycles in half-cells is achieved. Such flexible anodes based on earth abundant materials and aqueous dispersions could potentially open new opportunities for low-cost energy devices, and potentially can be applied for large-scale energy storage. © 2012 Elsevier Ltd.

Analytical and Experimental Evaluation of Joining Silicon Carbide to Silicon Carbide and Silicon Nitride to Silicon Nitride for Advanced Heat Engine Applications Phase II

Energy Technology Data Exchange (ETDEWEB)

Sundberg, G.J.

1994-01-01

Techniques were developed to produce reliable silicon nitride to silicon nitride (NCX-5101) curved joins which were used to manufacture spin test specimens as a proof of concept to simulate parts such as a simple rotor. Specimens were machined from the curved joins to measure the following properties of the join interlayer: tensile strength, shear strength, 22 C flexure strength and 1370 C flexure strength. In parallel, extensive silicon nitride tensile creep evaluation of planar butt joins provided a sufficient data base to develop models with accurate predictive capability for different geometries. Analytical models applied satisfactorily to the silicon nitride joins were Norton's Law for creep strain, a modified Norton's Law internal variable model and the Monkman-Grant relationship for failure modeling. The Theta Projection method was less successful. Attempts were also made to develop planar butt joins of siliconized silicon carbide (NT230).

Low cost solar air heater

International Nuclear Information System (INIS)

Gill, R.S.; Singh, Sukhmeet; Singh, Parm Pal

2012-01-01

Highlights: ► Single glazed low cost solar air heater is more efficient during summer while double glazed is better in winter. ► For the same initial investment, low cost solar air heaters collect more energy than packed bed solar air heater. ► During off season low cost solar air heater can be stored inside as it is light in weight. - Abstract: Two low cost solar air heaters viz. single glazed and double glazed were designed, fabricated and tested. Thermocole, ultraviolet stabilised plastic sheet, etc. were used for fabrication to reduce the fabrication cost. These were tested simultaneously at no load and with load both in summer and winter seasons along with packed bed solar air heater using iron chips for absorption of radiation. The initial costs of single glazed and double glazed are 22.8% and 26.8% of the initial cost of packed bed solar air heater of the same aperture area. It was found that on a given day at no load, the maximum stagnation temperatures of single glazed and double glazed solar air heater were 43.5 °C and 62.5 °C respectively. The efficiencies of single glazed, double glazed and packed bed solar air heaters corresponding to flow rate of 0.02 m 3 /s-m 2 were 30.29%, 45.05% and 71.68% respectively in winter season. The collector efficiency factor, heat removal factor based on air outlet temperature and air inlet temperature for three solar air heaters were also determined.

Structural and phase transformations in the low-temperature annealed amorphous “finemet”-type microwires

Energy Technology Data Exchange (ETDEWEB)

Tcherdyntsev, V.V., E-mail: vvch08@yandex.ru [National University of Science and Technology “MISIS”, Moscow 119049 (Russian Federation); Aleev, A.A. [SSC RF Institute for Theoretical and Experimental Physics, Moscow 117218 (Russian Federation); Churyukanova, M.N.; Kaloshkin, S.D. [National University of Science and Technology “MISIS”, Moscow 119049 (Russian Federation); Medvedeva, E.V. [Institute of Electrophysics, Ural Branch, Russian Academy of Sciences, Yekaterinburg 620016 (Russian Federation); Korchuganova, O.A. [SSC RF Institute for Theoretical and Experimental Physics, Moscow 117218 (Russian Federation); Zhukova, V. [Dpto. de Fns. Mater., UPV/EHU, San Sebastian 20018 (Spain); Zhukov, A.P. [Dpto. de Fns. Mater., UPV/EHU, San Sebastian 20018 (Spain); IKERBASQUE, Basque Foundation for Science, 48011 Bilbao (Spain)

2014-02-15

Highlights: • Structure and magnetic properties evolution at heating of amorphous microwires was studied. • Relaxation processes in the amorphous phase correlate with an increase in Curie temperature. • Curie temperature change can not be stabilized by a prolonged exposure at pre-crystallization temperatures. • Tomographic atom probe microscopy supports the formation of α-Fe phase precipitations enriched in Si. -- Abstract: Finemet-type glass-coated microwires with amorphous and nanocrystalline structure have been investigated. The relaxation and crystallization processes at heating of amorphous alloy have been studied by DSC method. We observed that the relaxation processes in the amorphous phase correlate with an increasing of the Curie temperature. Additionally a prolonged exposure of the samples below the crystallization temperatures does not stabilize the Curie temperature change. An investigation by the tomographic atom probe microscopy supports the formation of precipitations, probably α-Fe phase, as a result of low-temperature annealing (400 °C, 5 min). We found that the observed nano-sized areas were enriched in silicon.

Structural and phase transformations in the low-temperature annealed amorphous “finemet”-type microwires

International Nuclear Information System (INIS)

Tcherdyntsev, V.V.; Aleev, A.A.; Churyukanova, M.N.; Kaloshkin, S.D.; Medvedeva, E.V.; Korchuganova, O.A.; Zhukova, V.; Zhukov, A.P.

2014-01-01

Highlights: • Structure and magnetic properties evolution at heating of amorphous microwires was studied. • Relaxation processes in the amorphous phase correlate with an increase in Curie temperature. • Curie temperature change can not be stabilized by a prolonged exposure at pre-crystallization temperatures. • Tomographic atom probe microscopy supports the formation of α-Fe phase precipitations enriched in Si. -- Abstract: Finemet-type glass-coated microwires with amorphous and nanocrystalline structure have been investigated. The relaxation and crystallization processes at heating of amorphous alloy have been studied by DSC method. We observed that the relaxation processes in the amorphous phase correlate with an increasing of the Curie temperature. Additionally a prolonged exposure of the samples below the crystallization temperatures does not stabilize the Curie temperature change. An investigation by the tomographic atom probe microscopy supports the formation of precipitations, probably α-Fe phase, as a result of low-temperature annealing (400 °C, 5 min). We found that the observed nano-sized areas were enriched in silicon

Phosphorus Diffusion Gettering Efficacy in Upgraded Metallurgical-Grade Solar Silicon

Science.gov (United States)

Jiménez, A.; del Cañizo, C.; Cid, C.; Peral, A.

2018-05-01

In the context of the continuous price reduction in photovoltaics (PV) in recent years, Si feedstock continues to be a relevant component in the cost breakdown of a PV module, highlighting the need for low-cost, low-capital expenditure (CAPEX) silicon technologies to further reduce this cost component. Upgraded metallurgical-grade silicon (UMG Si) has recently received much attention, improving its quality and even attaining, in some cases, solar cell efficiencies similar to those of conventional material. However, some technical challenges still have to be addressed when processing this material to compensate efficiently for the high content of impurities and contaminants. Adaptation of a conventional solar cell process to monocrystalline UMG Si wafers has been studied in this work. In particular, a tailored phosphorus diffusion gettering step followed by a low-temperature anneal at 700°C was implemented, resulting in enhanced bulk lifetime and emitter recombination properties. In spite of the need for further research and material optimization, UMG Si wafers were successfully processed, achieving efficiencies in the range of 15% for a standard laboratory solar cell process with aluminum back surface field.

Recent Progress in Synthesis and Application of Low-Dimensional Silicon Based Anode Material for Lithium Ion Battery

Directory of Open Access Journals (Sweden)

Yuandong Sun

2017-01-01

Full Text Available Silicon is regarded as the next generation anode material for LIBs with its ultra-high theoretical capacity and abundance. Nevertheless, the severe capacity degradation resulting from the huge volume change and accumulative solid-electrolyte interphase (SEI formation hinders the silicon based anode material for further practical applications. Hence, a variety of methods have been applied to enhance electrochemical performances in terms of the electrochemical stability and rate performance of the silicon anodes such as designing nanostructured Si, combining with carbonaceous material, exploring multifunctional polymer binders, and developing artificial SEI layers. Silicon anodes with low-dimensional structures (0D, 1D, and 2D, compared with bulky silicon anodes, are strongly believed to have several advanced characteristics including larger surface area, fast electron transfer, and shortened lithium diffusion pathway as well as better accommodation with volume changes, which leads to improved electrochemical behaviors. In this review, recent progress of silicon anode synthesis methodologies generating low-dimensional structures for lithium ion batteries (LIBs applications is listed and discussed.

Bio-inspired silicon nanospikes fabricated by metal-assisted chemical etching for antibacterial surfaces

Science.gov (United States)

Hu, Huan; Siu, Vince S.; Gifford, Stacey M.; Kim, Sungcheol; Lu, Minhua; Meyer, Pablo; Stolovitzky, Gustavo A.

2017-12-01

The recently discovered bactericidal properties of nanostructures on wings of insects such as cicadas and dragonflies have inspired the development of similar nanostructured surfaces for antibacterial applications. Since most antibacterial applications require nanostructures covering a considerable amount of area, a practical fabrication method needs to be cost-effective and scalable. However, most reported nanofabrication methods require either expensive equipment or a high temperature process, limiting cost efficiency and scalability. Here, we report a simple, fast, low-cost, and scalable antibacterial surface nanofabrication methodology. Our method is based on metal-assisted chemical etching that only requires etching a single crystal silicon substrate in a mixture of silver nitrate and hydrofluoric acid for several minutes. We experimentally studied the effects of etching time on the morphology of the silicon nanospikes and the bactericidal properties of the resulting surface. We discovered that 6 minutes of etching results in a surface containing silicon nanospikes with optimal geometry. The bactericidal properties of the silicon nanospikes were supported by bacterial plating results, fluorescence images, and scanning electron microscopy images.

Synthesis and characterization of low cost magnetorheological (MR) fluids

Science.gov (United States)

Sukhwani, V. K.; Hirani, H.

2007-04-01

Magnetorheological fluids have great potential for engineering applications due to their variable rheological behavior. These fluids find applications in dampers, brakes, shock absorbers, and engine mounts. However their relatively high cost (approximately US600 per liter) limits their wide usage. Most commonly used magnetic material "Carbonyl iron" cost more than 90% of the MR fluid cost. Therefore for commercial viability of these fluids there is need of alternative economical magnetic material. In the present work synthesis of MR fluid has been attempted with objective to produce low cost MR fluid with high sedimentation stability and greater yield stress. In order to reduce the cost, economical electrolytic Iron powder (US 10 per Kg) has been used. Iron powder of relatively larger size (300 Mesh) has been ball milled to reduce their size to few microns (1 to 10 microns). Three different compositions have been prepared and compared for MR effect produced and stability. All have same base fluid (Synthetic oil) and same magnetic phase i.e. Iron particles but they have different additives. First preparation involves organic additives Polydimethylsiloxane (PDMS) and Stearic acid. Other two preparations involve use of two environmental friendly low-priced green additives guar gum (US 2 per Kg) and xanthan gum (US 12 per Kg) respectively. Magnetic properties of Iron particles have been measured by Vibrating Sample Magnetometer (VSM). Morphology of Iron particles and additives guar gum and xanthan gum has been examined by Scanning Electron Microscopy (SEM) and Particles Size Distribution (PSD) has been determined using Particle size analyzer. Microscopic images of particles, MH plots and stability of synthesized MR fluids have been reported. The prepared low cost MR fluids showed promising performance and can be effectively used for engineering applications demanding controllability in operations.

Low-cost sensor integrators for measuring the transmissivity of complex canopies to photosynthetically active radiation

International Nuclear Information System (INIS)

Newman, S.M.

1985-01-01

A system has been designed, tested and evaluated for measuring the transmissivities of complex canopies to photosynthetically active radiation (PAR). The system consists of filtered silicon photocells in cosine corrected mounts with outputs integrated by the use of chemical coulometers. The reading accumulated by the coulometers was taken electronically by the use of microcomputers. The low-cost sensor integrators, which do not require batteries, performed as expected and proved ideal for the study of agroforestry systems in remote areas. Information on the PAR transmissivity of a temperate agroforestry system in the form of an intercropped orchard is also presented. (author)

New Cloud and Precipitation Research Avenues Enabled by low-cost Phased-array Radar Technology

Science.gov (United States)

Kollias, P.; Oue, M.; Fridlind, A. M.; Matsui, T.; McLaughlin, D. J.

2017-12-01

For over half a century, radars operating in a wide range of frequencies have been the primary source of observational insights of clouds and precipitation microphysics and dynamics and contributed to numerous significant advancements in the field of cloud and precipitation physics. The development of multi-wavelength and polarization diversity techniques has further strengthened the quality of microphysical and dynamical retrievals from radars and has assisted in overcoming some of the limitations imposed by the physics of scattering. Atmospheric radars have historically employed a mechanically-scanning dish antenna and their ability to point to, survey, and revisit specific points or regions in the atmosphere is limited by mechanical inertia. Electronically scanned, or phased-array, radars capable of high-speed, inertialess beam steering, have been available for several decades, but the cost of this technology has limited its use to military applications. During the last 10 years, lower power and lower-cost versions of electronically scanning radars have been developed, and this presents an attractive and affordable new tool for the atmospheric sciences. The operational and research communities are currently exploring phased array advantages in signal processing (i.e. beam multiplexing, improved clutter rejection, cross beam wind estimation, adaptive sensing) and science applications (i.e. tornadic storm morphology studies). Here, we will present some areas of atmospheric research where inertia-less radars with ability to provide rapid volume imaging offers the potential to advance cloud and precipitation research. We will discuss the added value of single phased-array radars as well as networks of these radars for several problems including: multi-Doppler wind retrieval techniques, cloud lifetime studies and aerosol-convection interactions. The performance of current (dish) and future (e-scan) radar systems for these atmospheric studies will be evaluated using

STTR Phase I: Low-Cost, High-Accuracy, Whole-Building Carbon Dioxide Monitoring for Demand Control Ventilation

Energy Technology Data Exchange (ETDEWEB)

Hallstrom, Jason; Ni, Zheng Richard

2018-05-15

This STTR Phase I project assessed the feasibility of a new CO2 sensing system optimized for low-cost, high-accuracy, whole-building monitoring for use in demand control ventilation. The focus was on the development of a wireless networking platform and associated firmware to provide signal conditioning and conversion, fault- and disruptiontolerant networking, and multi-hop routing at building scales to avoid wiring costs. Early exploration of a bridge (or “gateway”) to direct digital control services was also explored. Results of the project contributed to an improved understanding of a new electrochemical sensor for monitoring indoor CO2 concentrations, as well as the electronics and networking infrastructure required to deploy those sensors at building scales. New knowledge was acquired concerning the sensor’s accuracy, environmental response, and failure modes, and the acquisition electronics required to achieve accuracy over a wide range of CO2 concentrations. The project demonstrated that the new sensor offers repeatable correspondence with commercial optical sensors, with supporting electronics that offer gain accuracy within 0.5%, and acquisition accuracy within 1.5% across three orders of magnitude variation in generated current. Considering production, installation, and maintenance costs, the technology presents a foundation for achieving whole-building CO2 sensing at a price point below $0.066 / sq-ft – meeting economic feasibility criteria established by the Department of Energy. The technology developed under this award addresses obstacles on the critical path to enabling whole-building CO2 sensing and demand control ventilation in commercial retrofits, small commercial buildings, residential complexes, and other highpotential structures that have been slow to adopt these technologies. It presents an opportunity to significantly reduce energy use throughout the United States a

Construction of the new silicon microstrips tracker for the Phase-II ATLAS detector

CERN Document Server

Liang, Zhijun; The ATLAS collaboration

2018-01-01

The inner detector of the present ATLAS detector has been designed and developed to function in the environment of the present Large Hadron Collider (LHC). At the next-generation tracking detector proposed for the High Luminosity LHC (HL-LHC), the so-called ATLAS Phase-II Upgrade, the particle densities and radiation levels will be higher by as much as a factor of ten. The new detectors must be faster, they need to be more highly segmented, and covering more area. They also need to be more resistant to radiation, and they require much greater power delivery to the front-end systems. For those reasons, the inner tracker of the ATLAS detector must be redesigned and rebuilt completely. The design of the ATLAS Upgrade inner tracker (ITk) has already been defined. It consists of several layers of silicon particle detectors. The innermost layers will be composed of silicon pixel sensors, and the outer layers will consist of silicon microstrip sensors. This paper will focus on the latest research and development act...

Low atomic number coating for XEUS silicon pore optics

Science.gov (United States)

Lumb, D. H.; Jensen, C. P.; Krumrey, M.; Cibik, L.; Christensen, F.; Collon, M.; Bavdaz, M.

2008-07-01

We describe a set of measurements on coated silicon substrates that are representative of the material to be used for the XEUS High Performance Pore Optics (HPO) technology. X-ray angular reflectance measurements at 2.8 and 8 keV, and energy scans of reflectance at a fixed angle representative of XEUS graze angles are presented. Reflectance is significantly enhanced for low energies when a low atomic number over-coating is applied. Modeling of the layer thicknesses and roughness is used to investigate the dependence on the layer thicknesses, metal and over coat material choices. We compare the low energy effective area increase that could be achieved with an optimized coating design.

Flat-plate solar array project. Volume 2: Silicon material

Science.gov (United States)

Lutwack, R.

1986-10-01

The goal of the Silicon Material Task, a part of the Flat Plate Solar Array (FSA) Project, was to develop and demonstate the technology for the low cost production of silicon of suitable purity to be used as the basic material for the manufacture of terrestrial photovoltaic solar cells. Summarized are 11 different processes for the production of silicon that were investigated and developed to varying extent by industrial, university, and Government researchers. The silane production section of the Union Carbide Corp. (UCC) silane process was developed completely in this program. Coupled with Siemens-type chemical vapor deposition reactors, the process was carried through the pilot stage. The overall UCC process involves the conversion of metallurgical-grade silicon to silane followed by decomposition of the silane to purified silicon. The other process developments are described to varying extents. Studies are reported on the effects of impurities in silicon on both silicon-material properties and on solar cell performance. These studies on the effects of impurities yielded extensive information and models for relating specific elemental concentrations to levels of deleterious effects.

Flat-plate solar array project. Volume 2: Silicon material

Science.gov (United States)

Lutwack, R.

1986-01-01

The goal of the Silicon Material Task, a part of the Flat Plate Solar Array (FSA) Project, was to develop and demonstate the technology for the low cost production of silicon of suitable purity to be used as the basic material for the manufacture of terrestrial photovoltaic solar cells. Summarized are 11 different processes for the production of silicon that were investigated and developed to varying extent by industrial, university, and Government researchers. The silane production section of the Union Carbide Corp. (UCC) silane process was developed completely in this program. Coupled with Siemens-type chemical vapor deposition reactors, the process was carried through the pilot stage. The overall UCC process involves the conversion of metallurgical-grade silicon to silane followed by decomposition of the silane to purified silicon. The other process developments are described to varying extents. Studies are reported on the effects of impurities in silicon on both silicon-material properties and on solar cell performance. These studies on the effects of impurities yielded extensive information and models for relating specific elemental concentrations to levels of deleterious effects.

Fabrication of silicon-embedded low resistance high-aspect ratio planar copper microcoils

Science.gov (United States)

Syed Mohammed, Zishan Ali; Puiu, Poenar Daniel; Aditya, Sheel

2018-01-01

Low resistance is an important requirement for microcoils which act as a signal receiver to ensure low thermal noise during signal detection. High-aspect ratio (HAR) planar microcoils entrenched in blind silicon trenches have features that make them more attractive than their traditional counterparts employing electroplating through a patterned thick polymer or achieved through silicon vias. However, challenges met in fabrication of such coils have not been discussed in detail until now. This paper reports the realization of such HAR microcoils embedded in Si blind trenches, fabricated with a single lithography step by first etching blind trenches in the silicon substrate with an aspect ratio of almost 3∶1 and then filling them up using copper electroplating. The electroplating was followed by chemical wet etching as a faster way of removing excess copper than traditional chemical mechanical polishing. Electrical resistance was further reduced by annealing the microcoils. The process steps and challenges faced in the realization of such structures are reported here followed by their electrical characterization. The obtained electrical resistances are then compared with those of other similar microcoils embedded in blind vias.

Silicon photonics at the University of Surrey

Science.gov (United States)

Reed, G. T.; Mashanovich, G.; Gardes, F. Y.; Gwilliam, R. M.; Wright, N. M.; Thomson, D. J.; Timotijevic, B. D.; Litvinenko, K. L.; Headley, W. R.; Smith, A. J.; Knights, A. P.; Jessop, P. E.; Tarr, N. G.; Deane, J. H. B.

2009-05-01

Silicon Photonics is a field that has seen rapid growth and dramatic changes in the past 5 years. According to the MIT Communications Technology Roadmap [1], which aims to establish a common architecture platform across market sectors with a potential $20B in annual revenue, silicon photonics is among the top ten emerging technologies. This has in part been a consequence of the recent involvement of large semiconductor companies around the world, particularly in the USA. Significant investment in the technology has also followed in Japan, Korea, and in the European Union. Low cost is a key driver, so it is imperative to pursue technologies that are mass-producible. Therefore, Silicon Photonics continues to progress at a rapid rate. This paper will describe some of the work of the Silicon Photonics Group at the University of Surrey in the UK. The work is concerned with the sequential development of a series of components for silicon photonic optical circuits, and some of the components are discussed here. In particular the paper will present work on optical waveguides, optical filters, modulators, and lifetime modification of carriers generated by two photon absorption, to improve the performance of Raman amplifiers in silicon.

Silicon Nanocrystal Synthesis in Microplasma Reactor

Science.gov (United States)

Nozaki, Tomohiro; Sasaki, Kenji; Ogino, Tomohisa; Asahi, Daisuke; Okazaki, Ken

Nanocrystalline silicon particles with grains smaller than 5 nm are widely recognized as a key material in optoelectronic devices, lithium battery electrodes, and bio-medical labels. Another important characteristic is that silicon is an environmentally safe material that is used in numerous silicon technologies. To date, several synthesis methods such as sputtering, laser ablation, and plasma-enhanced chemical vapor deposition (PECVD) based on low-pressure silane chemistry (SiH4) have been developed for precise control of size and density distributions of silicon nanocrystals. In this study, we explore the possibility of microplasma technologies for efficient production of mono-dispersed nanocrystalline silicon particles on a micrometer-scale, continuous-flow plasma reactor operated at atmospheric pressure. Mixtures of argon, hydrogen, and silicon tetrachloride were activated using a very-high-frequency (144 MHz) power source in a capillary glass tube with volume of less than 1 μl. Fundamental plasma parameters of the microplasma were characterized using optical emission spectroscopy, which respectively indicated electron density of 1015 cm-3, argon excitation temperature of 5000 K, and rotational temperature of 1500 K. Such high-density non-thermal reactive plasma can decompose silicon tetrachloride into atomic silicon to produce supersaturated silicon vapor, followed by gas-phase nucleation via three-body collision: particle synthesis in high-density plasma media is beneficial for promoting nucleation processes. In addition, further growth of silicon nuclei can be terminated in a short-residence-time reactor. Micro-Raman scattering spectra showed that as-deposited particles are mostly amorphous silicon with a small fraction of silicon nanocrystals. Transmission electron micrography confirmed individual 3-15 nm silicon nanocrystals. Although particles were not mono-dispersed, they were well separated and not coagulated.

Low atomic number coating for XEUS silicon pore optics

DEFF Research Database (Denmark)

Lumb, D.H.; Cooper-Jensen, Carsten P.; Krumrey, M.

2008-01-01

We describe a set of measurements on coated silicon substrates that are representative of the material to be used for the XEUS High Performance Pore Optics (HPO) technology. X-ray angular reflectance measurements at 2.8 and 8 keV, and energy scans of reflectance at a fixed angle representative...... of XEUS graze angles are presented. Reflectance is significantly enhanced for low energies when a low atomic number over-coating is applied. Modeling of the layer thicknesses and roughness is used to investigate the dependence on the layer thicknesses, metal and over coat material choices. We compare...

Production of technical silicon and silicon carbide from rice-husk

Directory of Open Access Journals (Sweden)

A. Z. Issagulov

2014-10-01

Full Text Available In the article there are studied physical and chemical properties of silicon-carbonic raw material – rice-husk, thermophysical characteristics of the process of rice-husk pyrolysis in nonreactive and oxidizing environment; structure and phase composition of products of the rice-husk pyrolysis in interval of temperatures 150 – 850 °С and high temperature pyrolysis in interval of temperatures 900 – 1 500 °С. There are defined the silicon-carbon production conditions, which meet the requirements applicable to charging materials at production of technical silicon and silicon carbide.

Silicon transport under rotating and combined magnetic fields in liquid phase diffusion growth of SiGe

Energy Technology Data Exchange (ETDEWEB)

Armour, N.; Dost, S. [Crystal Growth Laboratory, University of Victoria, Victoria, BC, V8W 3P6 (Canada)

2010-04-15

The effect of applied rotating and combined (rotating and static) magnetic fields on silicon transport during the liquid phase diffusion growth of SiGe was experimentally studied. 72-hour growth periods produced some single crystal sections. Single and polycrystalline sections of the processed samples were examined for silicon composition. Results show that the application of a rotating magnetic field enhances silicon transport in the melt. It also has a slight positive effect on flattening the initial growth interface. For comparison, growth experiments were also conducted under combined (rotating and static) magnetic fields. The processed samples revealed that the addition of static field altered the thermal characteristics of the system significantly and led to a complete melt back of the germanium seed. Silicon transport in the melt was also enhanced under combined fields compared with experiments with no magnetic field. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Low Cost silicon photodiodes for alpha spectrometry

International Nuclear Information System (INIS)

Khoury, H.; Lopes, A.; Hazin, C.; Lira, C.B.; Silva, E. da

1998-01-01

This study was carried out to evaluate the suitability of using commercially available photodiodes for alpha spectrometry, since the principle on which both operate are similar. Photodiodes are low priced compared to the commonly used semiconductor detectors making them potentially useful for research and teaching purposes. Very thin calibrated alpha sources of 2 41 A m, 2 44 C m and 2 35 U , produced at the Metrology Laboratory of IRD/CNEN, were used to test the performance of three photodiodes. The results showed that the responses of the photodiodes were linear with the alpha particle energy and that the energy resolution varied between 0,79% and 0,45%, with an efficiency of 8%. The resolution and efficiency presented by the photodiodes tested are similar to those obtained with other semiconductor detectors, evidencing that they can be used successfully as alpha detectors

Growth and Etch Rate Study of Low Temperature Anodic Silicon Dioxide Thin Films

Directory of Open Access Journals (Sweden)

Akarapu Ashok

2014-01-01

Full Text Available Silicon dioxide (SiO2 thin films are most commonly used insulating films in the fabrication of silicon-based integrated circuits (ICs and microelectromechanical systems (MEMS. Several techniques with different processing environments have been investigated to deposit silicon dioxide films at temperatures down to room temperature. Anodic oxidation of silicon is one of the low temperature processes to grow oxide films even below room temperature. In the present work, uniform silicon dioxide thin films are grown at room temperature by using anodic oxidation technique. Oxide films are synthesized in potentiostatic and potentiodynamic regimes at large applied voltages in order to investigate the effect of voltage, mechanical stirring of electrolyte, current density and the water percentage on growth rate, and the different properties of as-grown oxide films. Ellipsometry, FTIR, and SEM are employed to investigate various properties of the oxide films. A 5.25 Å/V growth rate is achieved in potentiostatic mode. In the case of potentiodynamic mode, 160 nm thickness is attained at 300 V. The oxide films developed in both modes are slightly silicon rich, uniform, and less porous. The present study is intended to inspect various properties which are considered for applications in MEMS and Microelectronics.

Crystalline silicon cell performance at low light intensities

Energy Technology Data Exchange (ETDEWEB)

Reich, N.H.; van Sark, W.G.J.H.M.; Alsema, E.A.; Turkenburg, W.C. [Utrecht University, Faculty of Science, Copernicus Institute for Sustainable Development and Innovation, Department of Science, Techonology and Society, Heidelberglaan 2, 3584 CS Utrecht (Netherlands); Lof, R.W.; Schropp, R.E.I. [Utrecht University, Faculty of Science, Debye Institute for Nanomaterials Science, Nanophotonics - Physics of Device, Utrecht University, P.O. Box 80.000, 3508 TA Utrecht (Netherlands); Sinke, W.C. [Energy research Centre of the Netherlands (ECN), P.O. Box 1, 1755 ZG Petten (Netherlands)

2009-09-15

Measured and modelled JV characteristics of crystalline silicon cells below one sun intensity have been investigated. First, the JV characteristics were measured between 3 and 1000 W/m{sup 2} at 6 light levels for 41 industrially produced mono- and multi-crystalline cells from 8 manufacturers, and at 29 intensity levels for a single multi-crystalline silicon between 0.01 and 1000 W/m{sup 2}. Based on this experimental data, the accuracy of the following four modelling approaches was evaluated: (1) empirical fill factor expressions, (2) a purely empirical function, (3) the one-diode model and (4) the two-diode model. Results show that the fill factor expressions and the empirical function fail at low light intensities, but a new empirical equation that gives accurate fits could be derived. The accuracy of both diode models are very high. However, the accuracy depends considerably on the used diode model parameter sets. While comparing different methods to determine diode model parameter sets, the two-diode model is found to be preferred in principle: particularly its capability in accurately modelling V{sub OC} and efficiency with one and the same parameter set makes the two-diode model superior. The simulated energy yields of the 41 commercial cells as a function of irradiance intensity suggest unbiased shunt resistances larger than about 10 k{omega} cm{sup 2} may help to avoid low energy yields of cells used under predominantly low light intensities. Such cells with diode currents not larger than about 10{sup -9} A/cm{sup 2} are excellent candidates for Product Integrated PV (PIPV) appliances. (author)

Fast determination of impurities in metallurgical grade silicon for photovoltaics by instrumental neutron activation analysis

International Nuclear Information System (INIS)

Hampel, J.; Boldt, F.M.; Gerstenberg, H.; Hampel, G.; Kratz, J.V.; Reber, S.; Wiehl, N.

2011-01-01

Standard wafer solar cells are made of near-semiconductor quality silicon. This high quality material makes up a significant part of the total costs of a solar module. Therefore, new concepts with less expensive so called solar grade silicon directly based on physiochemically upgraded metallurgical grade silicon are investigated. Metallurgical grade silicon contains large amounts of impurities, mainly transition metals like Fe, Cr, Mn, and Co, which degrade the minority carrier lifetime and thus the solar cell efficiency. A major reduction of the transition metal content occurs during the unidirectional crystallization due to the low segregation coefficient between the solid and liquid phase. A further reduction of the impurity level has to be done by gettering procedures applied to the silicon wafers. The efficiency of such cleaning procedures of metallurgical grade silicon is studied by instrumental neutron activation analysis (INAA). Small sized silicon wafers of approximately 200 mg with and without gettering step were analyzed. To accelerate the detection of transition metals in a crystallized silicon ingot, experiments of scanning whole vertical silicon columns with a diameter of approximately 1 cm by gamma spectroscopy were carried out. It was demonstrated that impurity profiles can be obtained in a comparably short time. Relatively constant transition metal ratios were found throughout an entire silicon ingot. This led to the conclusion that the determination of several metal profiles might be possible by the detection of only one 'leading element'. As the determination of Mn in silicon can be done quite fast compared to elements like Fe, Cr, and Co, it could be used as a rough marker for the overall metal concentration level. Thus, a fast way to determine impurities in photovoltaic silicon material is demonstrated. - Highlights: → We demonstrate a fast way to determine impurities in photovoltaic silicon by NAA. → We make first experiments of locally

Using silicon nanostructures for the improvement of silicon solar cells' efficiency

International Nuclear Information System (INIS)

Torre, J. de la; Bremond, G.; Lemiti, M.; Guillot, G.; Mur, P.; Buffet, N.

2006-01-01

Silicon nanostructures (ns-Si) show interesting optical and electrical properties as a result of the band gap widening caused by quantum confinement effects. Along with their potential utilization for silicon-based light emitters' fabrication, they could also represent an appealing option for the improvement of energy conversion efficiency in silicon-based solar cells whether by using their luminescence properties (photon down-conversion) or the excess photocurrent produced by an improved high-energy photon's absorption. In this work, we report on the morphological and optical studies of non-stoichiometric silica (SiO x ) and silicon nitride (SiN x ) layers containing silicon nanostructures (ns-Si) in view of their application for solar cell's efficiency improvement. The morphological studies of the samples performed by transmission electron microscopy (TEM) unambiguously show the presence of ns-Si in a crystalline form for high temperature-annealed SiO x layers and for low temperature deposition of SiN x layers. The photoluminescence emission (PL) shows a rather high efficiency in both kind of layers with an intensity of only a factor ∼ 100 lower than that of porous silicon (pi-Si). The photocurrent spectroscopy (PC) shows a significant increase of absorption at high photon energy excitation most probably related to photon absorption within ns-Si quantized states. Moreover, the absorption characteristics obtained from PC spectra show a good agreement with the PL emission states unambiguously demonstrating a same origin, related to Q-confined excitons within ns-Si. Finally, the major asset of this material is the possibility to incorporate it to solar cells manufacturing processing for an insignificant cost

Unraveling Crystalline Structure of High-Pressure Phase of Silicon Carbonate

Directory of Open Access Journals (Sweden)

Rulong Zhou

2014-03-01

Full Text Available Although CO_{2} and SiO_{2} both belong to group-IV oxides, they exhibit remarkably different bonding characteristics and phase behavior at ambient conditions. At room temperature, CO_{2} is a gas, whereas SiO_{2} is a covalent solid with rich polymorphs. A recent successful synthesis of the silicon-carbonate solid from the reaction between CO_{2} and SiO_{2} under high pressure [M. Santoro et al., Proc. Natl. Acad. Sci. U.S.A. 108, 7689 (2011] has resolved a long-standing puzzle regarding whether a Si_{x}C_{1−x}O_{2} compound between CO_{2} and SiO_{2} exists in nature. Nevertheless, the detailed atomic structure of the Si_{x}C_{1−x}O_{2} crystal is still unknown. Here, we report an extensive search for the high-pressure crystalline structures of the Si_{x}C_{1−x}O_{2} compound with various stoichiometric ratios (SiO_{2}:CO_{2} using an evolutionary algorithm. Based on the low-enthalpy structures obtained for each given stoichiometric ratio, several generic structural features and bonding characteristics of Si and C in the high-pressure phases are identified. The computed formation enthalpies show that the SiC_{2}O_{6} compound with a multislab three-dimensional (3D structure is energetically the most favorable at 20 GPa. Hence, a stable crystalline structure of the elusive Si_{x}C_{1−x}O_{2} compound under high pressure is predicted and awaiting future experimental confirmation. The SiC_{2}O_{6} crystal is an insulator with elastic constants comparable to typical hard solids, and it possesses nearly isotropic tensile strength as well as extremely low shear strength in the 2D plane, suggesting that the multislab 3D crystal is a promising solid lubricant. These valuable mechanical and electronic properties endow the SiC_{2}O_{6} crystal for potential applications in tribology and nanoelectronic devices, or as a stable solid-state form for CO_{2} sequestration.

Resonant silicon nanoparticles for enhancement of light absorption and photoluminescence from hybrid perovskite films and metasurfaces.

Science.gov (United States)

Tiguntseva, E; Chebykin, A; Ishteev, A; Haroldson, R; Balachandran, B; Ushakova, E; Komissarenko, F; Wang, H; Milichko, V; Tsypkin, A; Zuev, D; Hu, W; Makarov, S; Zakhidov, A

2017-08-31

Recently, hybrid halide perovskites have emerged as one of the most promising types of materials for thin-film photovoltaic and light-emitting devices because of their low-cost and potential for high efficiency. Further boosting their performance without detrimentally increasing the complexity of the architecture is critically important for commercialization. Despite a number of plasmonic nanoparticle based designs having been proposed for solar cell improvement, inherent optical losses of the nanoparticles reduce photoluminescence from perovskites. Here we use low-loss high-refractive-index dielectric (silicon) nanoparticles for improving the optical properties of organo-metallic perovskite (MAPbI 3 ) films and metasurfaces to achieve strong enhancement of photoluminescence as well as useful light absorption. As a result, we observed experimentally a 50% enhancement of photoluminescence intensity from a perovskite layer with silicon nanoparticles and 200% enhancement for a nanoimprinted metasurface with silicon nanoparticles on top. Strong increase in light absorption is also demonstrated and described by theoretical calculations. Since both silicon nanoparticle fabrication/deposition and metasurface nanoimprinting techniques are low-cost, we believe that the developed all-dielectric approach paves the way to novel scalable and highly effective designs of perovskite based metadevices.

Oxidation-enhanced diffusion of boron in very low-energy N2+-implanted silicon

Science.gov (United States)

Skarlatos, D.; Tsamis, C.; Perego, M.; Fanciulli, M.

2005-06-01

In this article we study the interstitial injection during oxidation of very low-energy nitrogen-implanted silicon. Buried boron δ layers are used to monitor the interstitial supersaturation during the oxidation of nitrogen-implanted silicon. No difference in boron diffusivity enhancement was observed compared to dry oxidation of nonimplanted samples. This result is different from our experience from N2O oxynitridation study, during which a boron diffusivity enhancement of the order of 20% was observed, revealing the influence of interfacial nitrogen on interstitial kinetics. A possible explanation may be that implanted nitrogen acts as an excess interstitial sink in order to diffuse towards the surface via a non-Fickian mechanism. This work completes a wide study of oxidation of very low-energy nitrogen-implanted silicon related phenomena we performed within the last two years [D. Skarlatos, C. Tsamis, and D. Tsoukalas, J. Appl. Phys. 93, 1832 (2003); D. Skarlatos, E. Kapetanakis, P. Normand, C. Tsamis, M. Perego, S. Ferrari, M. Fanciulli, and D. Tsoukalas, J. Appl. Phys. 96, 300 (2004)].

Bulk solar grade silicon: how chemistry and physics play to get a benevolent microstructured material

Energy Technology Data Exchange (ETDEWEB)

Pizzini, S. [University of Milano-Bicocca, Department of Materials Science, Milan (Italy); Nedsilicon SpA, Osimo, Ancona (Italy)

2009-07-15

The availability of low-cost alternatives to electronic grade silicon has been and still is the condition for the extensive use of photovoltaics as an efficient sun harvesting system. The first step towards this objective was positively carried out in the 1980s and resulted in the reduction in cost and energy of the growth process using as feedstock electronic grade scraps and a variety of solidification procedures, all of which deliver a multi-crystalline material of high photovoltaic quality. The second step was an intense R and D activity aiming at defining and developing at lab scale a new variety of silicon, called ''solar grade'' silicon, which should fulfil the requirement of both cost effectiveness and high conversion efficiency. The third step involved and still involves the development of cost-effective technologies for the manufacture of solar grade silicon, in alternative to the classical Siemens route, which relays, as is well-known, to the pyrolitic decomposition of high-purity trichlorosilane and which is, also in its more advanced versions, extremely energy intensive. Aim of this paper is to give the author's viewpoint about some open questions concerning bulk solar silicon for PV applications and about challenges and chances of novel feedstocks of direct metallurgical origin. (orig.)

Pilot-Scale Silicone Process for Low-Cost Carbon Dioxide Capture. Final Scientific/Technical Report

Energy Technology Data Exchange (ETDEWEB)

Hancu, Dan [General Electric Company, Niskayuna, NY (United States); Wood, Benjamin [General Electric Company, Niskayuna, NY (United States); Genovese, Sarah [General Electric Company, Niskayuna, NY (United States); Westendorf, Tiffany [General Electric Company, Niskayuna, NY (United States); Perry, Robert [General Electric Company, Niskayuna, NY (United States); Spiry, Irina [General Electric Company, Niskayuna, NY (United States); Farnum, Rachael [General Electric Company, Niskayuna, NY (United States); Singh, Surinder [General Electric Company, Niskayuna, NY (United States); Wilson, Paul [General Electric Company, Niskayuna, NY (United States); Chen, Wei [General Electric Company, Niskayuna, NY (United States); McDermott, John [General Electric Company, Niskayuna, NY (United States); Doherty, Mark [General Electric Company, Niskayuna, NY (United States); Rainka, Matt [General Electric Company, Niskayuna, NY (United States); Miebach, Barbara [General Electric Company, Niskayuna, NY (United States)

2017-08-03

), 230 oF desorption), and 65% at 0.5 MWe (GAP-1m : CO₂ (molar) = 1.5, 248 oF). Solvent loss was dominated by thermal degradation of the rich solvent. (iii) Steam Stripper Column Campaign: Higher expected cost of the solvent vs. aqueous amines makes solvent management a top priority to maintain the low cost for the process. During the testing of the GAP-1m solvent with the CSTR, thermal degradation of the rich solvent was found to be the main mechanism in solvent loss. Small amounts of water in the working solution were found to be an effective way to enable steam stripping, thereby lowering desorption temperature, and hence reducing thermal degradation. Steam stripping also increased working capacity by 30% due to a more efficient desorption. The concept was first tested in a glass stripping column (lab scale, GE GRC), optimized in a continuous bench scale system (2 kWe, GE GRC), and demonstrated in a 0.5 MWe PSTU at NCCC. No special system modifications were required to the PSTU to accommodate the testing of the non-aqueous GAP-1 solvent with the regenerator column. SSC was found to be more robust towards solvent entrainment (H₂O < 35 wt.%). 90 – 95% CO₂ capture efficiency was achieved under stoichiometric conditions at 0.5 MWe (235 oF desorption, 2 psig and 19 wt. % H₂O). Both CO₂ capture efficiency and specific duty reached optimum conditions at 18 wt.% H₂O. Low amine degradation (< 0.05 wt.%/day) was recorded over 350 hrs. of operation. Controlled water addition to GAP-1m solvent decreased the desorption temperature, thermal degradation, and improved the CO₂ working capacity due to more efficient absorption and desorption processes. Under these conditions, the GAP-1m solvent exhibited a 25% increased working capacity, and 10% reduction in specific steam duty vs. MEA, at 10 oF lower desorption temperature. (iv) Techno-economic Analysis: The pilot-scale PSTU engineering data were used to

Optical switching at 1.55um in silicon racetrack resonators using phase change materials

NARCIS (Netherlands)

Rudé, M.; Pello, J.; Simpson, R.E.; Osmond, J.; Roelkens, G.C.; Tol, van der J.J.G.M.; Pruneri, V.

2013-01-01

An optical switch operating at a wavelength of 1.55¿µm and showing a 12 dB modulation depth is introduced. The device is implemented in a silicon racetrack resonator using an overcladding layer of the phase change data storage material Ge2Sb2Te5, which exhibits high contrast in its optical

Lubricant effects on low Dk and silicone hydrogel lens comfort.

Science.gov (United States)

Ozkan, Jerome; Papas, Eric

2008-08-01

To investigate the influence of three lubricants of varying viscosity, on postinsertion and 6 h comfort with contact lens wear. Comfort and associated symptoms of dryness were assessed in 15 experienced contact lens wearers. Subjects wore a low Dk lens in one eye and a silicone hydrogel in the other and participated in four separate trials involving no lubricant (baseline), saline, and two commercially available lubricants of differing viscosity. The in-eye lubricants were used immediately following lens insertion and every 2 h postinsertion for a 6 h wear period. Postlens insertion comfort was significantly better for both lens types when lubricants or saline were used compared with no lubricant use. After 6 h lens wear, comfort was influenced by lens type and not by in-eye lubricant or saline use. Also after 6 h lens wear, less dryness sensation was reported for silicone hydrogel lenses when using lubricants but not saline. Although lubricant use does help reduce dryness symptoms with silicone hydrogel lens wear, there appears to be minimal longer-term benefit to comfort. Furthermore, increased lubricant viscosity did not lead to improved longer-term comfort.

Development of textured ZnO-coated low-cost glass substrate with very high haze ratio for silicon-based thin film solar cells

Energy Technology Data Exchange (ETDEWEB)

Hongsingthong, Aswin, E-mail: aswin.hongsingthong@nectec.or.th [Solar Energy Technology Laboratory, National Electronics and Computer Technology Center, 112 Thailand Science Park, Phahonyothin Road, Khlong 1, Khlong Luang, Pathumthani 12120 (Thailand); Krajangsang, Taweewat; Limmanee, Amornrat; Sriprapha, Kobsak; Sritharathikhun, Jaran [Solar Energy Technology Laboratory, National Electronics and Computer Technology Center, 112 Thailand Science Park, Phahonyothin Road, Khlong 1, Khlong Luang, Pathumthani 12120 (Thailand); Konagai, Makoto [Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1, NE-15, O-okayama, Meguro-ku, Tokyo 152-8552 (Japan)

2013-06-30

Zinc oxide (ZnO) films with a very high haze ratio and low resistivity were developed on soda–lime glass substrate by using reactive ion etching (RIE) treatment with carbon tetrafluoride (CF{sub 4}) to modify the substrate surface morphology before the deposition of ZnO films. We found that the surface morphology of the ZnO films deposited by metal organic chemical vapor deposition (MOCVD) technique could be modified by varying the glass treatment conditions and the gas pressure was a key parameter. With increasing glass-etching pressure, the surface morphology of the ZnO films changed from conventional pyramid-like single texture to greater cauliflower-like double texture, leading to significant increases in root mean square roughness and haze ratio of the films. By employing the developed high-haze ZnO films as a front transparent conductive oxide (TCO) layer in microcrystalline silicon solar cells, an enhancement in the quantum efficiency in the long-wavelength region has been achieved. Experimental results have verified that our unique and original glass etching treatment is a simple and effective technique to improve the light-scattering properties of the ZnO films while preserving their good transparency and electrical properties. Thus, the ZnO films deposited on etched soda–lime glass have a high potential for the use as a front TCO layer in thin-film Si solar cells. - Highlights: • High-haze zinc oxide (ZnO) grown on low cost soda–lime glass has been developed. • Surface of the ZnO can be modified by varying glass-substrate etching conditions. • Glass-etching pressure is a key to increase haze ratio of the ZnO films. • Higher cell efficiency has been achieved from cell using etched glass. • High-haze ZnO coated glass is a promising transparent conductive oxide coated glass.

Development of textured ZnO-coated low-cost glass substrate with very high haze ratio for silicon-based thin film solar cells

International Nuclear Information System (INIS)

Hongsingthong, Aswin; Krajangsang, Taweewat; Limmanee, Amornrat; Sriprapha, Kobsak; Sritharathikhun, Jaran; Konagai, Makoto

2013-01-01

Zinc oxide (ZnO) films with a very high haze ratio and low resistivity were developed on soda–lime glass substrate by using reactive ion etching (RIE) treatment with carbon tetrafluoride (CF 4 ) to modify the substrate surface morphology before the deposition of ZnO films. We found that the surface morphology of the ZnO films deposited by metal organic chemical vapor deposition (MOCVD) technique could be modified by varying the glass treatment conditions and the gas pressure was a key parameter. With increasing glass-etching pressure, the surface morphology of the ZnO films changed from conventional pyramid-like single texture to greater cauliflower-like double texture, leading to significant increases in root mean square roughness and haze ratio of the films. By employing the developed high-haze ZnO films as a front transparent conductive oxide (TCO) layer in microcrystalline silicon solar cells, an enhancement in the quantum efficiency in the long-wavelength region has been achieved. Experimental results have verified that our unique and original glass etching treatment is a simple and effective technique to improve the light-scattering properties of the ZnO films while preserving their good transparency and electrical properties. Thus, the ZnO films deposited on etched soda–lime glass have a high potential for the use as a front TCO layer in thin-film Si solar cells. - Highlights: • High-haze zinc oxide (ZnO) grown on low cost soda–lime glass has been developed. • Surface of the ZnO can be modified by varying glass-substrate etching conditions. • Glass-etching pressure is a key to increase haze ratio of the ZnO films. • Higher cell efficiency has been achieved from cell using etched glass. • High-haze ZnO coated glass is a promising transparent conductive oxide coated glass

Silicon photonic integration in telecommunications

Directory of Open Access Journals (Sweden)

Christopher Richard Doerr

2015-08-01

Full Text Available Silicon photonics is the guiding of light in a planar arrangement of silicon-based materials to perform various functions. We focus here on the use of silicon photonics to create transmitters and receivers for fiber-optic telecommunications. As the need to squeeze more transmission into a given bandwidth, a given footprint, and a given cost increases, silicon photonics makes more and more economic sense.

Mechanically flexible optically transparent silicon fabric with high thermal budget devices from bulk silicon (100)

KAUST Repository

Hussain, Muhammad Mustafa

2013-05-30

Today’s information age is driven by silicon based electronics. For nearly four decades semiconductor industry has perfected the fabrication process of continuingly scaled transistor – heart of modern day electronics. In future, silicon industry will be more pervasive, whose application will range from ultra-mobile computation to bio-integrated medical electronics. Emergence of flexible electronics opens up interesting opportunities to expand the horizon of electronics industry. However, silicon – industry’s darling material is rigid and brittle. Therefore, we report a generic batch fabrication process to convert nearly any silicon electronics into a flexible one without compromising its (i) performance; (ii) ultra-large-scale-integration complexity to integrate billions of transistors within small areas; (iii) state-of-the-art process compatibility, (iv) advanced materials used in modern semiconductor technology; (v) the most widely used and well-studied low-cost substrate mono-crystalline bulk silicon (100). In our process, we make trenches using anisotropic reactive ion etching (RIE) in the inactive areas (in between the devices) of a silicon substrate (after the devices have been fabricated following the regular CMOS process), followed by a dielectric based spacer formation to protect the sidewall of the trench and then performing an isotropic etch to create caves in silicon. When these caves meet with each other the top portion of the silicon with the devices is ready to be peeled off from the bottom silicon substrate. Release process does not need to use any external support. Released silicon fabric (25 μm thick) is mechanically flexible (5 mm bending radius) and the trenches make it semi-transparent (transparency of 7%). © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

Mechanically flexible optically transparent silicon fabric with high thermal budget devices from bulk silicon (100)

KAUST Repository

Hussain, Muhammad Mustafa; Rojas, Jhonathan Prieto; Sevilla, Galo T.

2013-01-01

Today’s information age is driven by silicon based electronics. For nearly four decades semiconductor industry has perfected the fabrication process of continuingly scaled transistor – heart of modern day electronics. In future, silicon industry will be more pervasive, whose application will range from ultra-mobile computation to bio-integrated medical electronics. Emergence of flexible electronics opens up interesting opportunities to expand the horizon of electronics industry. However, silicon – industry’s darling material is rigid and brittle. Therefore, we report a generic batch fabrication process to convert nearly any silicon electronics into a flexible one without compromising its (i) performance; (ii) ultra-large-scale-integration complexity to integrate billions of transistors within small areas; (iii) state-of-the-art process compatibility, (iv) advanced materials used in modern semiconductor technology; (v) the most widely used and well-studied low-cost substrate mono-crystalline bulk silicon (100). In our process, we make trenches using anisotropic reactive ion etching (RIE) in the inactive areas (in between the devices) of a silicon substrate (after the devices have been fabricated following the regular CMOS process), followed by a dielectric based spacer formation to protect the sidewall of the trench and then performing an isotropic etch to create caves in silicon. When these caves meet with each other the top portion of the silicon with the devices is ready to be peeled off from the bottom silicon substrate. Release process does not need to use any external support. Released silicon fabric (25 μm thick) is mechanically flexible (5 mm bending radius) and the trenches make it semi-transparent (transparency of 7%). © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

Low-Cost Multi-Junction Photovoltaic Cells, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — The proposed SBIR project will provide a pathway to dramatically reduce the cost of multi-junction solar cells. The project leverages a TRL6 micropackaging process...

Large area, low cost solar cell development and production readiness

Science.gov (United States)

Michaels, D.

1982-01-01

A process sequence for a large area ( or = 25 sq. cm) silicon solar cell was investigated. Generic cell choice was guided by the expected electron fluence, by the packing factors of various cell envelope designs onto each panel to provide needed voltage as well as current, by the weight constraints on the system, and by the cost goals of the contract.

Investigation of the impact of mechanical stress on the properties of silicon sensor modules for the ATLAS Phase II upgrade

Energy Technology Data Exchange (ETDEWEB)

Stegler, Martin; Polay, Luise; Spehrlich, Dennis; Bloch, Ingo [DESY, Zeuthen (Germany)

2016-07-01

The new ATLAS tracker for phase II will be composed of silicon pixel and strip sensor modules. Such a module consists of silicon sensors, boards and readout chips. In a currently ongoing study new adhesives to connect the modular components thermally and mechanically are examined. It was shown that the silicon sensor is exposed to mechanical stress when part of a module. Mechanical stress can cause damage to a sensor and can change the tensors of electrical properties. The study of the effects of mechanical stress on characteristics of the silicon sensor modules are the focus in this presentation. The thermal induced tensile stress near to the surface of a silicon sensor build in a module was simulated. A four point bending setup was used to measure the maximum tensile stress of silicon and to verify the piezoresistive effect on ATLAS07 sensors. The results of the electrical measurements and simulations of stressed silicon sensor modules are shown in the presentation.

Final report. Fabrication of silicon carbide/silicon nitride nanocomposite materials and characterization of their performance; Herstellung von Siliciumcarbid/Siliciumnitrid-Nanocomposite-Werkstoffen und Charakterisierung ihrer Leistungsfaehigkeit. Abschlussbericht

Energy Technology Data Exchange (ETDEWEB)

Westerheide, R.; Woetting, G.; Schmitz, H.W.

1998-07-01

The presented activities were initiated by the well known publications of Niihara and Ishizaki. There, the strengthening and toughening of silicon nitride by nanoscaled silicon carbide particles are described. Both authors have used expensive powder production routes to achieve the optimum mechanical properties. However, for a commercial purpose these routes are not applicable due to their high cost and low reproducibility. The production route chosen by H.C. Starck together with CFI and the Fraunhofer-Institute is a powder synthesis based on the carbothermal reaction of silicon nitride as a low cost synthesis method. The investigations were performed for materials made from synthesis powders and other reference materials. The materials were densified with relatively high amounts of conventional sintering additives by gas pressure sintering. It is shown, that the postulated maxima of strength and fracture toughness behaviour at room temperature with maxima at about 5% to 25% nanoscaled SiC cannot be achieved. However, the mechanical high temperature material behaviour is as good as the behaviour of highly developed silicon nitride materials, which are produced by HIP or by consequent minimisation of the additive content with the well known difficulties to densify these materials. An overview will be given here on the powder production route and their specific problems, the mechanical properties, the microstructure and the possible effects of the microstructure, which result in an improvement of the creep resistance. (orig.)

NetPICOmag: A low-cost networked magnetometer and its applications

Science.gov (United States)

Schofield, I.; Connors, M.; Russell, C. T.

2012-03-01

NetPICOmag (NPM) is the culmination of a design effort to build a compact, low-cost, laboratory-grade, networked magnetometer designed for remote autonomous operation, suited for research and education. NPM allows wide placement of magnetometers sensitive enough to detect auroral activity and the daily variation, and is suitable for education projects and a range of geophysical applications. The use of networked microcontrollers and GPS timing is applicable to other small instruments for field or local deployment, and an onboard data logging capability has also been demonstrated. We illustrate the value of the placement of low-cost magnetometers to increase coverage in an area through the study of a Pc 5 pulsation event which took place on September 4, 2010. By combining results with those from auroral zone magnetometers supporting the THEMIS project, we find that the phase velocity of these morning sector pulsations was northward on the ground. The event took place under very quiet solar wind conditions, and credible mapping associates it with the inner magnetosphere. Another aspect beyond increasing areal coverage is increasing density of coverage, which becomes feasible with instruments of very low cost. We examine aspects of the April 5, 2010 space weather event which are possible to deduce from closely spaced magnetometers.

Floating Silicon Method

Energy Technology Data Exchange (ETDEWEB)

Kellerman, Peter

2013-12-21

The Floating Silicon Method (FSM) project at Applied Materials (formerly Varian Semiconductor Equipment Associates), has been funded, in part, by the DOE under a “Photovoltaic Supply Chain and Cross Cutting Technologies” grant (number DE-EE0000595) for the past four years. The original intent of the project was to develop the FSM process from concept to a commercially viable tool. This new manufacturing equipment would support the photovoltaic industry in following ways: eliminate kerf losses and the consumable costs associated with wafer sawing, allow optimal photovoltaic efficiency by producing high-quality silicon sheets, reduce the cost of assembling photovoltaic modules by creating large-area silicon cells which are free of micro-cracks, and would be a drop-in replacement in existing high efficiency cell production process thereby allowing rapid fan-out into the industry.

Low energy, low cost, efficient CO{sub 2} capture

Energy Technology Data Exchange (ETDEWEB)

Michael C. Trachtenberg; Lihong Bao; David A. Smith; Remy Dumortier [Carbozyme, Inc., Monmouth Junction, NJ (United States)

2006-07-01

This paper discusses the development and some characteristics of a new, enzyme-based, contained liquid membrane contactor to capture CO{sub 2}. The enzyme carbonic anhydrase catalyzes the removal of CO{sub 2} while the membrane contactor increases the surface area to allow the reduction of the size of the system. The modular system design is easily scaled to any required size reducing the investment costs. The system captures CO{sub 2} at a low energy and low cost promising to be a cost effective technology for CO{sub 2} capture. 5 refs., 7 figs.

Low-temperature synthesis of silicon carbide powder using shungite

International Nuclear Information System (INIS)

Gubernat, A.; Pichor, W.; Lach, R.; Zientara, D.; Sitarz, M.; Springwald, M.

2017-01-01

The paper presents the results of investigation the novel and simple method of synthesis of silicon carbide. As raw material for synthesis was used shungite, natural mineral rich in carbon and silica. The synthesis of SiC is possible in relatively low temperature in range 1500–1600°C. It is worth emphasising that compared to the most popular method of SiC synthesis (Acheson method where the temperature of synthesis is about 2500°C) the proposed method is much more effective. The basic properties of products obtained from different form of shungite and in wide range of synthesis temperature were investigated. The process of silicon carbide formation was proposed and discussed. In the case of synthesis SiC from powder of raw materials the product is also in powder form and not requires any additional process (crushing, milling, etc.). Obtained products are pure and after grain classification may be used as abrasive and polishing powders. (Author)

Low-temperature synthesis of silicon carbide powder using shungite

Energy Technology Data Exchange (ETDEWEB)

Gubernat, A.; Pichor, W.; Lach, R.; Zientara, D.; Sitarz, M.; Springwald, M.

2017-07-01

The paper presents the results of investigation the novel and simple method of synthesis of silicon carbide. As raw material for synthesis was used shungite, natural mineral rich in carbon and silica. The synthesis of SiC is possible in relatively low temperature in range 1500–1600°C. It is worth emphasising that compared to the most popular method of SiC synthesis (Acheson method where the temperature of synthesis is about 2500°C) the proposed method is much more effective. The basic properties of products obtained from different form of shungite and in wide range of synthesis temperature were investigated. The process of silicon carbide formation was proposed and discussed. In the case of synthesis SiC from powder of raw materials the product is also in powder form and not requires any additional process (crushing, milling, etc.). Obtained products are pure and after grain classification may be used as abrasive and polishing powders. (Author)

Next generation grinding spindle for cost-effective manufacture of advanced ceramic components

Energy Technology Data Exchange (ETDEWEB)

Kovach, J.A.; Laurich, M.A.

2000-01-01

Finish grinding of advanced structural ceramics has generally been considered an extremely slow and costly process. Recently, however, results from the High-Speed, Low-Damage (HSLD) program have clearly demonstrated that numerous finish-process performance benefits can be realized by grinding silicon nitride at high wheel speeds. A new, single-step, roughing-process capable of producing high-quality silicon nitride parts at high material removal rates while dramatically reducing finishing costs has been developed.

Effect of Silicon on Desulfurization of Aluminum-killed Steels

Science.gov (United States)

Roy, Debdutta

controlled by mass transfer in the metal and slag phase mass transfer has a minor effect on the overall desulfurization kinetics. The model results are in agreement with the experimental data for the change in sulfur, silicon and aluminum contents with time which renders credibility to the underlying hypothesis of the kinetic model. Although the change of sulfur content with time is not very sensitive to the activity data source, the change of aluminum and silicon contents with time depend on the activity data source. The experimental results demonstrate that if the silicon content in the steel is high enough, the silicon can reduce the alumina from the slag and thus the steel melt will pick up aluminum. This can cause significant savings in aluminum consumption. For most of the slag compositions used in the experiments, the overall mass transfer is only limited by the steel phase and the slag phase mass transfer can be neglected for most practical cases. Mass balance calculations in the experiments support the basis of the model and also show that with respect to aluminum consumption, silica reduction is the main aluminum consuming (or production) reaction and the desulfurization reaction is only a secondary consumer of aluminum. Results from the plant trials conducted to test the effect of silicon on ladle desulfurization show that the rate and extent of desulfurization increase with the increase of the initial Si content, so in the ladle refining process, adding all the silicon in the beginning with the aluminum and the fluxes will be beneficial and could save considerable processing time at the ladle. The aluminum consumption for the heats with silicon added in the beginning (both in terms of the Al added to the steel and as slag deoxidants) is considerably lower compared to the cases where the silicon is added at the end. However, on a relative cost term, aluminum and silicon are similarly priced so substitution would not offer a major cost advantage.

The OPEnSampler: A Low-Cost, Low-Weight, Customizable and Modular Open Source 24-Unit Automatic Water Sampler

Science.gov (United States)

Nelke, M.; Selker, J. S.; Udell, C.

2017-12-01

Reliable automatic water samplers allow repetitive sampling of various water sources over long periods of time without requiring a researcher on site, reducing human error as well as the monetary and time costs of traveling to the field, particularly when the scale of the sample period is hours or days. The high fixed cost of buying a commercial sampler with little customizability can be a barrier to research requiring repetitive samples, such as the analysis of septic water pre- and post-treatment. DIY automatic samplers proposed in the past sacrifice maximum volume, customizability, or scope of applications, among other features, in exchange for a lower net cost. The purpose of this project was to develop a low-cost, highly customizable, robust water sampler that is capable of sampling many sources of water for various analytes. A lightweight aluminum-extrusion frame was designed and assembled, chosen for its mounting system, strength, and low cost. Water is drawn from two peristaltic pumps through silicone tubing and directed into 24 foil-lined 250mL bags using solenoid valves. A programmable Arduino Uno microcontroller connected to a circuit board communicates with a battery operated real-time clock, initiating sampling stages. Period and volume settings are programmable in-field by the user via serial commands. The OPEnSampler is an open design, allowing the user to decide what components to use and the modular theme of the frame allows fast mounting of new manufactured or 3D printed components. The 24-bag system weighs less than 10kg and the material cost is under $450. Up to 6L of sample water can be drawn at a rate of 100mL/minute in either direction. Faster flowrates are achieved by using more powerful peristaltic pumps. Future design changes could allow a greater maximum volume by filling the unused space with more containers and adding GSM communications to send real time status information.

Changes in myopia with low-Dk hydrogel and high-Dk silicone hydrogel extended wear.

Science.gov (United States)

Jalbert, Isabelle; Stretton, Serina; Naduvilath, Thomas; Holden, Brien; Keay, Lisa; Sweeney, Deborah

2004-08-01

This study compared changes in myopia between wearers of high-oxygen permeability (Dk) silicone hydrogel lenses and low-Dk hydrogel lenses after 1 year of extended wear (EW). Ninety-two adult subjects were randomly assigned to a lens type. Subjective refraction and autokeratometry were performed at baseline and at 6 and 12 months. After 6 months of EW, myopia (spherical equivalent) regressed by 0.18 +/- 0.33 D (p Dk silicone hydrogel group and progressed by -0.23 +/- 0.36 D (p Dk hydrogel group. There were no further changes after 12 months. Previous lens wear history, baseline refractive error, and age and gender did not have an impact on the change in myopia, and only 35% of the variation could be accounted for by changes in corneal curvature and lens type. Soft contact lens type significantly affects the direction of change in myopia during EW. We hypothesize that these changes are driven by pressure-related redistribution of corneal tissue in high-Dk silicone hydrogel lens wearers and by hypoxia-associated corneal thinning in low-Dk hydrogel wearers. More long-term studies are required to confirm whether the effects of high-Dk silicone hydrogel lens wear on myopia are permanent.

Structural and electrochemical study of the reaction of lithium with silicon nanowires

KAUST Repository

Chan, Candace K.

2009-04-01

The structural transformations of silicon nanowires when cycled against lithium were evaluated using electrochemical potential spectroscopy and galvanostatic cycling. During the charge, the nanowires alloy with lithium to form an amorphous LixSi compound. At potentials <50 mV, a structural transformation occurs. In studies on micron-sized particles previously reported in the literature, this transformation is a crystallization to a metastable Li15Si4 phase. X-ray diffraction measurements on the Si nanowires, however, show that they are amorphous, suggesting that a different amorphous phase (LiySi) is formed. Lithium is removed from this phase in the discharge to form amorphous silicon. We have found that limiting the voltage in the charge to 70 mV results in improved efficiency and cyclability compared to charging to 10 mV. This improvement is due to the suppression of the transformation at low potentials, which alloys for reversible cycling of amorphous silicon nanowires. © 2008 Elsevier B.V. All rights reserved.

Achievement report for fiscal 1997 on developing a silicon manufacturing process with reduced energy consumption. Investigation and research on analyzing practical application of a technology to manufacture solar cell silicon raw materials; 1997 nendo energy shiyo gorika silicon seizo process kaihatsu. Taiyo denchi silicon genryo seizo gijutsu no jitsuyoka kaiseki ni kansuru chosa kenkyu

Energy Technology Data Exchange (ETDEWEB)

NONE

1998-03-01

This paper describes the achievement in fiscal 1997 of analyzing practical application of a technology to manufacture solar cell silicon raw materials. Silicon consumption for solar cells in fiscal 1997 has increased to 2000-ton level, and the supply has been very tight. For drastic improvement in the demand and supply situation, development of SOG-Si manufacturing technology and its early practical application are desired. The development of the NEDO mass-production technology using melting and refining has completed constructing the process facilities in fiscal 1998, and will enter the stage of operational research. However, insufficiency in the basic data about behavior of impurities is inhibiting the development. In the substrate manufacturing technology, discussions have shown progress on use of diversifying silicons outside the standard by using the electromagnetic casting process. For slicing and processing the substrates, development of a high-performance slicing equipment and automatic rough rinsing machine is under way. Properties required on silicon raw materials vary considerably widely because of difference in cell making systems and conditions, which is attributable to unknown impurity behavior. When 1GW production is assumed, the cell module manufacturing cost is calculated as 137 yen/W, for which low-cost mass production for its realization, slicing productivity enhancement, and cost reduction are required. The paper also describes site surveys in overseas countries. (NEDO)

Simultaneous X-ray imaging and diffraction study of shock propagation and phase transition in silicon

Science.gov (United States)

Galtier, Eric

2017-06-01

X-ray phase contrast imaging technique using a free electron laser have observed the propagation of laser-driven shock waves directly inside materials. While providing images with few hundred nanometers spatial resolution, access to more quantitative information like the material density and the various shock front speeds remain challenging due to imperfections in the images limiting the convergence in the reconstruction algorithm. Alternatively, pump-probe X-ray diffraction (XRD) is a robust technique to extract atomic crystalline structure of compressed matter, providing insight into the kinetics of phase transformation and material response to stress. However, XRD by itself is not sufficient to extract the equation of state of the material under study. Here we report on the use of the LCLS free electron laser as a source of a high-resolution X-ray microscopy enabling the direct imaging of shock waves and phase transitions in optically opaque silicon. In this configuration, no algorithm is necessary to extract the material density and the position of the shock fronts. Simultaneously, we probed the crystalline structure via XRD of the various phases in laser compressed silicon. E. Galtier, B. Nagler, H. J. Lee, S. Brown, E. Granados, A. Hashim, E. McBride, A. Mackinnon, I. Nam, J. Zimmerman (SLAC) A. Gleason (Stanford, LANL) A. Higginbotham (University of York) A. Schropp, F. Seiboth (DESY).

A low cost, high performance, 1.2m off-axis telescope built with NG-Xinetics silicon carbide

Science.gov (United States)

Rey, Justin J.; Wellman, John A.; Egan, Richard G.; Wollensak, Richard J.

2011-09-01

The search for extrasolar habitable planets is one of three major astrophysics priorities identified for the next decade. These missions demand very high performance visible-wavelength optical imaging systems. Such high performance space telescopes are typically extremely expensive and can be difficult for government agencies to afford in today's economic climate, and most lower cost systems offer little benefit because they fall short on at least one of the following three key performance parameters: imaging wavelength, total system-level wavefront error and aperture diameter. Northrop Grumman Xinetics has developed a simple, lightweight, low-cost telescope design that will address the near-term science objectives of this astrophysics theme with the required optical performance, while reducing the telescope cost by an order of magnitude. Breakthroughs in SiC mirror manufacturing, integrated wavefront sensing, and high TRL deformable mirror technology have finally been combined within the same organization to offer a complete end-to-end telescope system in the lower end of the Class D cost range. This paper presents the latest results of real OAP polishing and metrology data, an optimized optical design, and finite element derived WFE

Surface roughening of silicon, thermal silicon dioxide, and low-k dielectric coral films in argon plasma

International Nuclear Information System (INIS)

Yin Yunpeng; Sawin, Herbert H.

2008-01-01

The surface roughness evolutions of single crystal silicon, thermal silicon dioxide (SiO 2 ), and low dielectric constant film coral in argon plasma have been measured by atomic force microscopy as a function of ion bombardment energy, ion impingement angle, and etching time in an inductively coupled plasma beam chamber, in which the plasma chemistry, ion energy, ion flux, and ion incident angle can be adjusted independently. The sputtering yield (or etching rate) scales linearly with the square root of ion energy at normal impingement angle; additionally, the angular dependence of the etching yield of all films in argon plasma followed the typical sputtering yield curve, with a maximum around 60 deg. -70 deg. off-normal angle. All films stayed smooth after etching at normal angle but typically became rougher at grazing angles. In particular, at grazing angles the rms roughness level of all films increased if more material was removed; additionally, the striation structure formed at grazing angles can be either parallel or transverse to the beam impingement direction, which depends on the off-normal angle. More interestingly, the sputtering caused roughness evolution at different off-normal angles can be qualitatively explained by the corresponding angular dependent etching yield curve. In addition, the roughening at grazing angles is a strong function of the type of surface; specifically, coral suffers greater roughening compared to thermal silicon dioxide

Studies of pulsed laser melting and rapid solidification using amorphous silicon

International Nuclear Information System (INIS)

Lowndes, D.H.; Wood, R.F.

1984-06-01

Pulsed-laser melting of ion implantation-amorphized silicon layers, and subsequent solidification were studied. Measurements of the onset of melting of amorphous silicon layers and of the duration of melting, and modified melting model calculations demonstrated that the thermal conductivity, K/sub a/, of amorphous silicon is very low (K/sub a/ approx. = 0.02 W/cm-K). K/sub a/ is also the dominant parameter determining the dynamical response of amorphous silicon to pulsed laser radiation. TEM indicates that bulk (volume) nucleation occurs directly from the highly undercooled liquid silicon that can be prepared by pulsed laser melting of amorphous silicon layers at low laser energy densities. A modified thermal melting model is presented. The model calculations demonstrate that the release of latent heat by bulk nucleation occurring during the melt-in process is essential to obtaining agreement with observed depths of melting. These calculations also show that this release of latent heat accompanying bulk nucleation can result in the existence of buried molten layers of silicon in the interior of the sample after the surface has solidified. The bulk nucleation implies that the liquid-to-amorphous phase transition (produced using picosecond or uv nanosecond laser pulses) cannot be explained using purely thermodynamic considerations

Low-energy ion beam synthesis of Ag endotaxial nanostructures in silicon

Science.gov (United States)

Nagarajappa, Kiran; Guha, Puspendu; Thirumurugan, Arun; Satyam, Parlapalli V.; Bhatta, Umananda M.

2018-06-01

Coherently, embedded metal nanostructures (endotaxial) are known to have potential applications concerning the areas of plasmonics, optoelectronics and thermoelectronics. Incorporating appropriate concentrations of metal atoms into crystalline silicon is critical for these applications. Therefore, choosing proper dose of low-energy ions, instead of depositing thin film as a source of metal atoms, helps in avoiding surplus concentration of metal atoms that diffuses into the silicon crystal. In this work, 30 keV silver negative ions are implanted into a SiO x /Si(100) at two different fluences: 1 × 1015 and 2.5 × 1015 Ag- ions/cm2. Later, the samples are annealed at 700 °C for 1 h in Ar atmosphere. Embedded silver nanostructures have been characterized using planar and cross-sectional TEM (XTEM) analysis. Planar TEM analysis shows the formation of mostly rectangular silver nanostructures following the fourfold symmetry of the substrate. XTEM analysis confirms the formation of prism-shaped silver nanostructures embedded inside crystalline silicon. Endotaxial nature of the embedded crystals has been discussed using selected area electron diffraction analysis.

Low-cost carriers fare competition effect

NARCIS (Netherlands)

Carmona Benitez, R.B.; Lodewijks, G.

2010-01-01

This paper examines the effects that low-cost carriers (LCC’s) produce when entering new routes operated only by full-service carriers (FSC’s) and routes operated by low-cost carriers in competition with full-service carriers. A mathematical model has been developed to determine what routes should

Low-Cost Spectral Sensor Development Description.

Energy Technology Data Exchange (ETDEWEB)

Armijo, Kenneth Miguel; Yellowhair, Julius

2014-11-01

Solar spectral data for all parts of the US is limited due in part to the high cost of commercial spectrometers. Solar spectral information is necessary for accurate photovoltaic (PV) performance forecasting, especially for large utility-scale PV installations. A low-cost solar spectral sensor would address the obstacles and needs. In this report, a novel low-cost, discrete- band sensor device, comprised of five narrow-band sensors, is described. The hardware is comprised of commercial-off-the-shelf components to keep the cost low. Data processing algorithms were developed and are being refined for robustness. PV module short-circuit current ( I sc ) prediction methods were developed based on interaction-terms regression methodology and spectrum reconstruction methodology for computing I sc . The results suggest the computed spectrum using the reconstruction method agreed well with the measured spectrum from the wide-band spectrometer (RMS error of 38.2 W/m 2 -nm). Further analysis of computed I sc found a close correspondence of 0.05 A RMS error. The goal is for ubiquitous adoption of the low-cost spectral sensor in solar PV and other applications such as weather forecasting.

Liquid-phase plasma synthesis of silicon quantum dots embedded in carbon matrix for lithium battery anodes

Energy Technology Data Exchange (ETDEWEB)

Wei, Ying [Institute of Functional Nano and Soft Materials (FUNSOM) and Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou (China); College of Chemistry and Chemical Engineering, Bohai University, Jinzhou 121000 (China); Yu, Hang; Li, Haitao; Ming, Hai; Pan, Keming; Huang, Hui [Institute of Functional Nano and Soft Materials (FUNSOM) and Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou (China); Liu, Yang, E-mail: yangl@suda.edu.cn [Institute of Functional Nano and Soft Materials (FUNSOM) and Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou (China); Kang, Zhenhui, E-mail: zhkang@suda.edu.cn [Institute of Functional Nano and Soft Materials (FUNSOM) and Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou (China)

2013-10-15

Graphical abstract: - Highlights: • Silicon quantum dots embedded in carbon matrix (SiQDs/C) were fabricated. • SiQDs/C exhibits excellent battery performance as anode materials with high specific capacity. • The good performance was attributed to the marriage of small sized SiQDs and carbon. - Abstract: Silicon quantum dots embedded in carbon matrix (SiQDs/C) nanocomposites were prepared by a novel liquid-phase plasma assisted synthetic process. The SiQDs/C nanocomposites were demonstrated to show high specific capacity, good cycling life and high coulmbic efficiency as anode materials for lithium-ion battery.

Liquid-phase plasma synthesis of silicon quantum dots embedded in carbon matrix for lithium battery anodes

International Nuclear Information System (INIS)

Wei, Ying; Yu, Hang; Li, Haitao; Ming, Hai; Pan, Keming; Huang, Hui; Liu, Yang; Kang, Zhenhui

2013-01-01

Graphical abstract: - Highlights: • Silicon quantum dots embedded in carbon matrix (SiQDs/C) were fabricated. • SiQDs/C exhibits excellent battery performance as anode materials with high specific capacity. • The good performance was attributed to the marriage of small sized SiQDs and carbon. - Abstract: Silicon quantum dots embedded in carbon matrix (SiQDs/C) nanocomposites were prepared by a novel liquid-phase plasma assisted synthetic process. The SiQDs/C nanocomposites were demonstrated to show high specific capacity, good cycling life and high coulmbic efficiency as anode materials for lithium-ion battery

Relation of nanoscale and macroscopic properties of mixed-phase silicon thin films

Czech Academy of Sciences Publication Activity Database

Fejfar, Antonín; Vetushka, Aliaksi; Kalusová, V.; Čertík, Ondřej; Ledinský, Martin; Rezek, Bohuslav; Stuchlík, Jiří; Kočka, Jan

2010-01-01

Roč. 207, č. 3 (2010), s. 582-586 ISSN 1862-6300 R&D Projects: GA MŠk(CZ) LC06040; GA AV ČR KAN400100701; GA MŠk LC510; GA AV ČR(CZ) IAA100100902 Institutional research plan: CEZ:AV0Z10100521 Keywords : conductive atomic force microscopy (C-AFM) * mixed phase silicon thin films Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.458, year: 2010 http://dx.doi.org/10.1002/pssa.200982907

Low Cost P/M Aluminum Syntactic Foam for Blade Containment in Turbine Engines, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — The proposed Phase I SBIR proposes a low density (0.75-1.2g/cc)syntactic aluminum foam energy absorber co-manufactured inside a composite fan case for turbine...

Development of a platinum resistance thermometer on the silicon substrate for phase change studies

International Nuclear Information System (INIS)

Cai, Qingjun; Chen, Ya-Chi; Tsai, Chialun; DeNatale, Jeffrey F

2012-01-01

Resistance temperature detectors are commonly used measurement sensors in heat transfer studies. In many resistance temperature detectors, the platinum resistance thermometer (PRT) is chemically stable, has a wide temperature measurement range and possesses high measurement accuracy. In phase change studies of carbon nanotubes, bi-porous structures for microelectronic thermal management, 100 nm thick PRTs are developed on silicon substrates with 10 nm titanium adhesive to achieve precise and interface-free temperature measurements. After an annealing at 375 °C, the PRT samples are calibrated at a temperature range from 20 to 180 °C. Measurement hysteresis of temperature appears in thermal cycles. Electrical resistance tends to become low during all heating periods, which establishes the maximum measurement deviation of 10 °C. Experimental results from two different thin-film PRTs indicate that accurate and repeatable temperature measurements can be achieved by either reducing heating speed or using data in the cooling period. (paper)

Linear and nonlinear characterization of low-stress high-confinement silicon-rich nitride waveguides.

Science.gov (United States)

Krückel, Clemens J; Fülöp, Attila; Klintberg, Thomas; Bengtsson, Jörgen; Andrekson, Peter A; Torres-Company, Víctor

2015-10-05

In this paper we introduce a low-stress silicon enriched nitride platform that has potential for nonlinear and highly integrated optics. The manufacturing process of this platform is CMOS compatible and the increased silicon content allows tensile stress reduction and crack free layer growth of 700 nm. Additional benefits of the silicon enriched nitride is a measured nonlinear Kerr coefficient n(2) of 1.4·10(-18) m(2)/W (5 times higher than stoichiometric silicon nitride) and a refractive index of 2.1 at 1550 nm that enables high optical field confinement allowing high intensity nonlinear optics and light guidance even with small bending radii. We analyze the waveguide loss (∼1 dB/cm) in a spectrally resolved fashion and include scattering loss simulations based on waveguide surface roughness measurements. Detailed simulations show the possibility for fine dispersion and nonlinear engineering. In nonlinear experiments we present continuous-wave wavelength conversion and demonstrate that the material does not show nonlinear absorption effects. Finally, we demonstrate microfabrication of resonators with high Q-factors (∼10(5)).

Development of Large-Format Lithium-Ion Cells with Silicon Anode and Low Flammable Electrolyte

Science.gov (United States)

Wu, James J.; Hernandez-Lugo, D. M.; Smart, M. C.; Ratnakumar, B. V.; Miller, T. B.; Lvovich, V. F.; Lytle, J. K.

2014-01-01

NASA is developing safe, high energy and high capacity lithium-ion cell designs and batteries for future missions under NASAs Advanced Space Power System (ASPS) project. Advanced cell components, such as high specific capacity silicon anodes and low-flammable electrolytes have been developed for improving the cell specific energy and enhancing safety. To advance the technology readiness level, we have developed large-format flight-type hermetically sealed battery cells by incorporating high capacity silicon anodes, commercially available lithium nickel, cobalt, aluminum oxide (NCA) cathodes, and low-flammable electrolytes. In this report, we will present the performance results of these various battery cells. In addition, we will also discuss the post-test cell analysis results as well.

Application of porous silicon in solar cell

Science.gov (United States)

Maniya, Nalin H.; Ashokan, Jibinlal; Srivastava, Divesh N.

2018-05-01

Silicon is widely used in solar cell applications with over 95% of all solar cells produced worldwide composed of silicon. Nanostructured thin porous silicon (PSi) layer acting as anti-reflecting coating is used in photovoltaic solar cells due to its advantages including simple and low cost fabrication, highly textured surfaces enabling lowering of reflectance, controllability of thickness and porosity of layer, and high surface area. PSi layers have previously been reported to reduce the reflection of light and replaced the conventional anti-reflective coating layers on solar cells. This can essentially improve the efficiency and decrease the cost of silicon solar cells. Here, we investigate the reflectance of different PSi layers formed by varying current density and etching time. PSi layers were formed by a combination of current density including 60 and 80 mA/cm2 and time for fabrication as 2, 4, 6, and 8 seconds. The fabricated PSi layers were characterized using reflectance spectroscopy and field emission scanning electron microscopy. Thickness and pore size of PSi layer were increased with increase in etching time and current density, respectively. The reflectance of PSi layers was decreased with increase in etching time until 6 seconds and increased again after 6 seconds, which was observed across both the current density. Reduction in reflectance indicates the increase of absorption of light by silicon due to the thin PSi layer. In comparison with the reflectance of silicon wafer, PSi layer fabricated at 80 mA/cm2 for 6 seconds gave the best result with reduction in reflectance up to 57%. Thus, the application of PSi layer as an effective anti-reflecting coating for the fabrication of solar cell has been demonstrated.

Application of CBD-Zinc Sulfide Film as an Antireflection Coating on Very Large Area Multicrystalline Silicon Solar Cell

Directory of Open Access Journals (Sweden)

U. Gangopadhyay

2007-01-01

Full Text Available The low-cost chemical bath deposition (CBD technique is used to prepare CBD-ZnS films as antireflective (AR coating for multicrystalline silicon solar cells. The uniformity of CBD-ZnS film on large area of textured multicrystalline silicon surface is the major challenge of CBD technique. In the present work, attempts have been made for the first time to improve the rate of deposition and uniformity of deposited film by controlling film stoichiometry and refractive index and also to minimize reflection loss by proper optimization of molar percentage of different chemical constituents and deposition conditions. Reasonable values of film deposition rate (12.13 Å′/min., good film uniformity (standard deviation <1, and refractive index (2.35 along with a low percentage of average reflection (6-7% on a textured mc-Si surface are achieved with proper optimization of ZnS bath. 12.24% efficiency on large area (125 mm × 125 mm multicrystalline silicon solar cells with CBD-ZnS antireflection coating has been successfully fabricated. The viability of low-cost CBD-ZnS antireflection coating on large area multicrystalline silicon solar cell in the industrial production level is emphasized.

Hybrid integration of carbon nanotubes in silicon photonic structures

Science.gov (United States)

Durán-Valdeiglesias, E.; Zhang, W.; Alonso-Ramos, C.; Le Roux, X.; Serna, S.; Hoang, H. C.; Marris-Morini, D.; Cassan, E.; Intonti, F.; Sarti, F.; Caselli, N.; La China, F.; Gurioli, M.; Balestrieri, M.; Vivien, L.; Filoramo, A.

2017-02-01

Silicon photonics, due to its compatibility with the CMOS platform and unprecedented integration capability, has become the preferred solution for the implementation of next generation optical interconnects to accomplish high efficiency, low energy consumption, low cost and device miniaturization in one single chip. However, it is restricted by silicon itself. Silicon does not have efficient light emission or detection in the telecommunication wavelength range (1.3 μm-1.5 μm) or any electro-optic effect (i.e. Pockels effect). Hence, silicon photonic needs to be complemented with other materials for the realization of optically-active devices, including III-V for lasing and Ge for detection. The very different requirement of these materials results in complex fabrication processes that offset the cost-effectiveness of the Si photonics approach. For this purpose, carbon nanotubes (CNTs) have recently been proposed as an attractive one-dimensional light emitting material. Interestingly, semiconducting single walled CNTs (SWNTs) exhibit room-temperature photo- and electro-luminescence in the near-IR that could be exploited for the implementation of integrated nano-sources. They can also be considered for the realization of photo-detectors and optical modulators, since they rely on intrinsically fast non-linear effects, such as Stark and Kerr effect. All these properties make SWNTs ideal candidates in order to fabricate a large variety of optoelectronic devices, including near-IR sources, modulators and photodetectors on Si photonic platforms. In addition, solution processed SWNTs can be integrated on Si using spin-coating or drop-casting techniques, obviating the need of complex epitaxial growth or chip bonding approaches. Here, we report on our recent progress in the coupling of SWNTs light emission into optical resonators implemented on the silicon-on-insulator (SOI) platform. .

Particulate-free porous silicon networks for efficient capacitive deionization water desalination.

Science.gov (United States)

Metke, Thomas; Westover, Andrew S; Carter, Rachel; Oakes, Landon; Douglas, Anna; Pint, Cary L

2016-04-22

Energy efficient water desalination processes employing low-cost and earth-abundant materials is a critical step to sustainably manage future human needs for clean water resources. Here we demonstrate that porous silicon - a material harnessing earth abundance, cost, and environmental/biological compatibility is a candidate material for water desalination. With appropriate surface passivation of the porous silicon material to prevent surface corrosion in aqueous environments, we show that porous silicon templates can enable salt removal in capacitive deionization (CDI) ranging from 0.36% by mass at the onset from fresh to brackish water (10 mM, or 0.06% salinity) to 0.52% in ocean water salt concentrations (500 mM, or ~0.3% salinity). This is on par with reports of most carbon nanomaterial based CDI systems based on particulate electrodes and covers the full salinity range required of a CDI system with a total ocean-to-fresh water required energy input of ~1.45 Wh/L. The use of porous silicon for CDI enables new routes to directly couple water desalination technology with microfluidic systems and photovoltaics that natively use silicon materials, while mitigating adverse effects of water contamination occurring from nanoparticulate-based CDI electrodes.

Particulate-free porous silicon networks for efficient capacitive deionization water desalination

Science.gov (United States)

Metke, Thomas; Westover, Andrew S.; Carter, Rachel; Oakes, Landon; Douglas, Anna; Pint, Cary L.

2016-01-01

Energy efficient water desalination processes employing low-cost and earth-abundant materials is a critical step to sustainably manage future human needs for clean water resources. Here we demonstrate that porous silicon – a material harnessing earth abundance, cost, and environmental/biological compatibility is a candidate material for water desalination. With appropriate surface passivation of the porous silicon material to prevent surface corrosion in aqueous environments, we show that porous silicon templates can enable salt removal in capacitive deionization (CDI) ranging from 0.36% by mass at the onset from fresh to brackish water (10 mM, or 0.06% salinity) to 0.52% in ocean water salt concentrations (500 mM, or ~0.3% salinity). This is on par with reports of most carbon nanomaterial based CDI systems based on particulate electrodes and covers the full salinity range required of a CDI system with a total ocean-to-fresh water required energy input of ~1.45 Wh/L. The use of porous silicon for CDI enables new routes to directly couple water desalination technology with microfluidic systems and photovoltaics that natively use silicon materials, while mitigating adverse effects of water contamination occurring from nanoparticulate-based CDI electrodes. PMID:27101809

The role of the bimodal distribution of ultra-fine silicon phase and nano-scale V-phase (AlSi2Sc2) on spark plasma sintered hypereutectic Al–Si–Sc alloys

International Nuclear Information System (INIS)

Raghukiran, Nadimpalli; Kumar, Ravi

2016-01-01

Hypereutectic Al–Si and Al–Si–Sc alloys were spark plasma sintered from corresponding gas-atomized powders. The microstructures of the Al–Si and Al–Si–Sc alloys possessed remarkably refined silicon particles in the size range of 0.38–3.5 µm and 0.35–1.16 µm respectively in contrast to the silicon particles of size greater than 100 µm typically found in conventionally cast alloys. All the sintered alloys exhibited significant ductility of as high as 85% compressive strain without failure even with the presence of relatively higher weight fraction of the brittle silicon phase. Moreover, the Al–Si–Sc alloys have shown appreciable improvement in the compressive strength over their binary counterparts due to the presence of intermetallic compound AlSi 2 Sc 2 of size 10–20 nm distributed uniformly in the matrix of those alloys. The dry sliding pin-on-disc wear tests showed improvement in the wear performance of the sintered alloys with increase in silicon content in the alloys. Further, the Al–Si–Sc ternary alloys with relatively lesser silicon content exhibited appreciable improvement in the wear resistance over their binary counterparts. The Al–Si–Sc alloys with bimodal distribution of the strengthening phases consisting of ultra-fine (sub-micron size) silicon particles and the nano-scale AlSi 2 Sc 2 improved the strength and wear properties of the alloys while retaining significant amount of ductility.

Phase regeneration of DPSK signals in a silicon waveguide with reverse-biased p-i-n junction

DEFF Research Database (Denmark)

Da Ros, Francesco; Vukovic, Dragana; Gajda, Andrzej

2014-01-01

Phase regeneration of differential phase-shift keying (DPSK) signals is demonstrated using a silicon waveguide as nonlinear medium for the first time. A p-i-n junction across the waveguide enables decreasing the nonlinear losses introduced by free-carrier absorption (FCA), thus allowing phase......-sensitive extinction ratios as high as 20 dB to be reached under continuous-wave (CW) pumping operation. Furthermore the regeneration properties are investigated under dynamic operation for a 10-Gb/s DPSK signal degraded by phase noise, showing receiver sensitivity improvements above 14 dB. Different phase noise...... frequencies and amplitudes are examined, resulting in an improvement of the performance of the regenerated signal in all the considered cases....

Strategies to fight low-cost rivals.

Science.gov (United States)

Kumar, Nirmalya

2006-12-01

Companies find it challenging and yet strangely reassuring to take on opponents whose strategies, strengths, and weaknesses resemble their own. Their obsession with familiar rivals, however, has blinded them to threats from disruptive, low-cost competitors. Successful price warriors, such as the German retailer Aldi, are changing the nature of competition by employing several tactics: focusing on just one or a few consumer segments, delivering the basic product or providing one benefit better than rivals do, and backing low prices with superefficient operations. Ignoring cutprice rivals is a mistake because they eventually force companies to vacate entire market segments. Price wars are not the answer, either: Slashing prices usually lowers profits for incumbents without driving the low-cost entrants out of business. Companies take various approaches to competing against cut-price players. Some differentiate their products--a strategy that works only in certain circumstances. Others launch low-cost businesses of their own, as many airlines did in the 1990s--a so-called dual strategy that succeeds only if companies can generate synergies between the existing businesses and the new ventures, as the financial service providers HSBC and ING did. Without synergies, corporations are better off trying to transform themselves into low-cost players, a difficult feat that Ryanair accomplished in the 1990s, or into solution providers. There will always be room for both low-cost and value-added players. How much room each will have depends not only on the industry and customers' preferences, but also on the strategies traditional businesses deploy.