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Sample records for lithium-drifted germanium diodes

  1. Germanium: From Its Discovery to SiGe Devices

    Energy Technology Data Exchange (ETDEWEB)

    Haller, E.E.

    2006-06-14

    Germanium, element No.32, was discovered in 1886 by Clemens Winkler. Its first broad application was in the form of point contact Schottky diodes for radar reception during WWII. The addition of a closely spaced second contact led to the first all-solid-state electronic amplifier device, the transistor. The relatively low bandgap, the lack of a stable oxide and large surface state densities relegated germanium to the number 2 position behind silicon. The discovery of the lithium drift process, which made possible the formation of p-i-n diodes with fully depletable i-regions several centimeters thick, led germanium to new prominence as the premier gamma-ray detector. The development of ultra-pure germanium yielded highly stable detectors which have remained unsurpassed in their performance. New acceptors and donors were discovered and the electrically active role of hydrogen was clearly established several years before similar findings in silicon. Lightly doped germanium has found applications as far infrared detectors and heavily Neutron Transmutation Doped (NTD) germanium is used in thermistor devices operating at a few milliKelvin. Recently germanium has been rediscovered by the silicon device community because of its superior electron and hole mobility and its ability to induce strains when alloyed with silicon. Germanium is again a mainstream electronic material.

  2. Analysis of light emission performance of pseudoheterostructure diode based on germanium micro-bridge

    Science.gov (United States)

    Zhou, Yang; Sun, Junqiang; Jiang, Jialin; Zhang, Ruiwen; Gao, Jianfeng; Zhou, Heng

    2017-08-01

    We present an electrically driven pseudoheterostructure diode based on germanium micro-bridge structure, and investigate the electrical transport, internal quantum efficiency and transparency current density of the diode. The effects of injected carrier density and uniaxial tensile strain on intervalence band absorption is also discussed. The injected carrier is well confined in the diode with uniaxial strain around 4%. An internal quantum efficiency around 9% and transparency current density of 5.8 kA /cm2 can be obtained with doping density of 5 ×1018cm-3 and transparency carrier density of 2 ×1018cm-3 when uniaxial tensile strain is 4%. The result indicates the pseudoheterostructure diode based on the Ge micro-bridge can be used to realize an efficient electrically driven Si-based light emission source.

  3. Room-temperature direct band-gap electroluminescence from germanium (111)-fin light-emitting diodes

    Science.gov (United States)

    Tani, Kazuki; Saito, Shin-ichi; Oda, Katsuya; Miura, Makoto; Wakayama, Yuki; Okumura, Tadashi; Mine, Toshiyuki; Ido, Tatemi

    2017-03-01

    Germanium (Ge) (111) fins of 320 nm in height were successfully fabricated using a combination of flattening sidewalls of a silicon (Si) fin structure by anisotropic wet etching with tetramethylammonium hydroxide, formation of thin Ge fins by selective Si oxidation in SiGe layers, and enlargement of Ge fins by Ge homogeneous epitaxial growth. The excellent electrical characteristics of Ge(111) fin light-emitting diodes, such as an ideality factor of 1.1 and low dark current density of 7.1 × 10‑5 A cm‑2 at reverse bias of ‑2 V, indicate their good crystalline quality. A tensile strain of 0.2% in the Ge fins, which originated from the mismatch of the thermal expansion coefficients between Ge and the covering SiO2 layers, was expected from the room-temperature photoluminescence spectra, and room-temperature electroluminescence corresponding to the direct band-gap transition was observed from the Ge fins.

  4. Schottky barrier parameters and low frequency noise characteristics of graphene-germanium Schottky barrier diode

    Science.gov (United States)

    Khurelbaatar, Zagarzusem; Kil, Yeon-Ho; Shim, Kyu-Hwan; Cho, Hyunjin; Kim, Myung-Jong; Lee, Sung-Nam; Jeong, Jae-chan; Hong, Hyobong; Choi, Chel-Jong

    2016-03-01

    We investigated the electrical properties of chemical vapor deposition-grown monolayer graphene/n-type germanium (Ge) Schottky barrier diodes (SBD) using current-voltage (I-V) characteristics and low frequency noise measurements. The Schottky barrier parameters of graphene/n-type Ge SBDs, such as Schottky barrier height (VB), ideality factor (n), and series resistance (Rs), were extracted using the forward I-V and Cheung's methods. The VB and n extracted from the forward ln(I)-V plot were found to be 0.63 eV and 1.78, respectively. In contrast, from Cheung method, the VB and n were calculated to be 0.53 eV and 1.76, respectively. Such a discrepancy between the values of VB calculated from the forward I-V and Cheung's methods indicated a deviation from the ideal thermionic emission of graphene/n-type Ge SBD associated with the voltage drop across graphene. The low frequency noise measurements performed at the frequencies in the range of 10 Hz-1 kHz showed that the graphene/n-type Ge SBD had 1/f γ frequency dependence, with γ ranging from 1.09 to 1.12, regardless of applied forward biases. Similar to forward-biased SBDs operating in the thermionic emission mode, the current noise power spectral density of graphene/n-type Ge SBD was linearly proportional to the forward current.

  5. Strain tunable light emitting diodes with germanium P-I-N heterojunctions

    Science.gov (United States)

    Lagally, Max G; Sanchez Perez, Jose Roberto

    2016-10-18

    Tunable p-i-n diodes comprising Ge heterojunction structures are provided. Also provided are methods for making and using the tunable p-i-n diodes. Tunability is provided by adjusting the tensile strain in the p-i-n heterojunction structure, which enables the diodes to emit radiation over a range of wavelengths.

  6. Ameliorating neutron damage in orthogonal-strip planar germanium detectors

    Energy Technology Data Exchange (ETDEWEB)

    Jackson, E.G., E-mail: Emily_Jackson@student.uml.edu [Department of Physics and Applied Physics, University of Massachusetts Lowell, Lowell, MA 01854 (United States); Hull, E.L. [PHDS Company, 3011 Amherst Road, Knoxville, TN 37921 (United States); Lister, C.J. [Department of Physics and Applied Physics, University of Massachusetts Lowell, Lowell, MA 01854 (United States); Pehl, R.H. [PHDS Company, 3011 Amherst Road, Knoxville, TN 37921 (United States)

    2015-02-21

    The segmentation of the electrodes of germanium detectors facilitates gamma-ray imaging and tracking. Replacing the traditional n-type lithium drifted contact is a key to finer segmentation. Amorphous-germanium is a promising alternative contact technology, and large, highly segmented detectors have been fabricated. One factor in adopting any new detector technology is its robustness in hostile environments. Therefore, to explore the effects of neutron damage on position sensitive amorphous-contact germanium gamma-ray detectors and investigate methods for mitigation and repair of damage, two detectors were intentionally exposed to a non-uniform neutron fluence of greater than 4(1) ×10{sup 9} n/cm{sup 2} produced in the {sup 7}Li(p, n){sup 7}Be reaction at the UMass Lowell Van-de-Graaff accelerator. Post-irradiation tests were made on the counters by varying the electric field, the charge deposition rate, the operating temperature, and utilizing various annealing cycles in order to ascertain the robustness of their performance after irradiation.

  7. Modeling research of flexible single crystal germanium PIN diode under off state%柔性单晶锗 PIN 二极管在关态下的建模研究

    Institute of Scientific and Technical Information of China (English)

    王飞; 秦国轩

    2016-01-01

    This letter presents the fabrication method of flexible single-crystalline germanium nanomembrane (GeNM ) p-intrinsic-n (PIN ) diodes on plastic substrate and radio frequency (rf ) characterization under off state of various bending strains .In order to quantitatively research the RF characteristic variations with different mechanical stress applied on the flexible PIN diode under reverse mode ,accurate equivalent circuit models were set up under different bending radius .After researching the model parameters of the diode varying with the mechanical stress ,it can be obtained internal resistance ,parasitic inductance ,p+ p-junction resistor and p-n+ junction capacitance are the main factors affecting the rf characteristics .Mechanical bending makes these parameters change monotonously ,which results the rf characteristics of flexible single-crystal germanium PIN diode getting better under the off state .It also shows great potential in the strain measurement field .%介绍了柔性单晶锗纳米薄膜(GeNM )PIN 二极管的制备方法和反向偏置下对应不同弯曲状态下的射频特性。为了定量研究在反向偏置下机械弯曲对柔性PIN二极管射频特性的影响,分别搭建了不同弯曲半径下的等效电路模型。通过研究不同机械应力作用下模型中的各个参数的变化得到二极管内部电阻,寄生电感,p+ p-结的电阻以及p-n+结的电容为影响其射频特性的主要因素,机械弯曲使这些参数值单调变化,导致柔性单晶锗PIN二极管关态下的射频特性变好。这在应变测量领域显示出很大的发展应用潜力。

  8. Mineral commodity profiles: Germanium

    Science.gov (United States)

    Butterman, W.C.; Jorgenson, John D.

    2005-01-01

    Overview -- Germanium is a hard, brittle semimetal that first came into use a half-century ago as a semiconductor material in radar units and as the material from which the first transistor was made. Today it is used principally as a component of the glass in telecommunications fiber optics; as a polymerization catalyst for polyethylene terephthalate (PET), a commercially important plastic; in infrared (IR) night vision devices; and as a semiconductor and substrate in electronics circuitry. Most germanium is recovered as a byproduct of zinc smelting, although it also has been recovered at some copper smelters and from the fly ash of coal-burning industrial powerplants. It is a highly dispersed element, associated primarily with base-metal sulfide ores. In the United States, germanium is recovered from zinc smelter residues and manufacturing scrap and is refined by two companies at four germanium refineries. One of the four refineries is dedicated to processing scrap. In 2000, producers sold zone-refined (high-purity) germanium at about $1,250 per kilogram and electronic-grade germanium dioxide (GeO2) at $800 per kilogram. Domestic refined production was valued at $22 million. Germanium is a critical component in highly technical devices and processes. It is likely to remain in demand in the future at levels at least as high as those of 2000. U.S. resources of germanium are probably adequate to meet domestic needs for several decades.

  9. Noise and oscillations in gold-doped germanium photodiodes

    NARCIS (Netherlands)

    Bolwijn, P.T.; Rijst, C. v. d.; Ast, W.G. van; Lam, T.

    1967-01-01

    Considerable noise effects in excess of shot noise and oscillations found in commercially available, gold-doped germanium photodiodes have been investigated. The noise and oscillation effects occur in the photocurrent of reversely biased diodes at temperatures below about 100°K. The dependence of th

  10. HEROICA: an underground facility for the fast screening of germanium detectors

    Science.gov (United States)

    Andreotti, E.; Garfagnini, A.; Maneschg, W.; Barros, N.; Benato, G.; Brugnera, R.; Costa, F.; Falkenstein, R.; Guthikonda, K. K.; Hegai, A.; Hemmer, S.; Hult, M.; Jänner, K.; Kihm, T.; Lehnert, B.; Liao, H.; Lubashevskiy, A.; Lutter, G.; Marissens, G.; Modenese, L.; Pandola, L.; Reissfelder, M.; Sada, C.; Salathe, M.; Schmitt, C.; Schulz, O.; Schwingenheuer, B.; Turcato, M.; Ur, C.; von Sturm, K.; Wagner, V.; Westermann, J.

    2013-06-01

    HEROICA (Hades Experimental Research Of Intrinsic Crystal Appliances) is an infrastructure to characterize germanium detectors and has been designed and constructed at the HADES Underground Research Laboratory, located in Mol (Belgium). Thanks to the 223 m overburden of clay and sand, the muon flux is lowered by four orders of magnitude. This natural shield minimizes the exposure of radio-pure germanium material to cosmic radiation resulting in a significant suppression of cosmogenic activation in the germanium detectors. The project has been strongly motivated by a special production of germanium detectors for the GERDA experiment. GERDA, currently collecting data at the Laboratori Nazionali del Gran Sasso of INFN, is searching for the neutrinoless double beta decay of 76Ge. In the near future, GERDA will increase its mass and sensitivity by adding new Broad Energy Germanium (BEGe) detectors. The production of the BEGe detectors is done at Canberra in Olen (Belgium), located about 30 km from the underground test site. Therefore, HADES is used both for storage of the crystals over night, during diode production, and for the characterization measurements. A full quality control chain has been setup and tested on the first seven prototype detectors delivered by the manufacturer at the beginning of 2012. The screening capabilities demonstrate that the installed setup fulfills a fast and complete set of measurements on the diodes and it can be seen as a general test facility for the fast screening of high purity germanium detectors. The results are of major importance for a future massive production and characterization chain of germanium diodes foreseen for a possible next generation 1-tonne double beta decay experiment with 76Ge.

  11. Avalanche diode having reduced dark current and method for its manufacture

    Energy Technology Data Exchange (ETDEWEB)

    Davids, Paul; Starbuck, Andrew Lee; Pomerene, Andrew T. S.

    2017-08-29

    An avalanche diode includes an absorption region in a germanium body epitaxially grown on a silicon body including a multiplication region. Aspect-ratio trapping is used to suppress dislocation growth in the vicinity of the absorption region.

  12. Germanium geochemistry and mineralogy

    Science.gov (United States)

    Bernstein, L.R.

    1985-01-01

    Germanium is enriched in the following geologic environments: 1. (1) iron meteorites and terrestrial iron-nickel; 2. (2) sulfide ore deposits, particularly those hosted by sedimentary rocks; 3. (3) iron oxide deposits; 4. (4) oxidized zones of Ge-bearing sulfide deposits; 5. (5) pegmatites, greisens, and skarns; and 6. (6) coal and lignitized wood. In silicate melts, Ge is highly siderophile in the presence of native iron-nickel; otherwise, it is highly lithophile. Among silicate minerals, Ge is concentrated in those having less polymerized silicate tetrahedra such as olivine and topaz. In deposits formed from hydrothermal solutions, Ge tends to be enriched mostly in either sulfides or in fluorine-bearing phases; it is thus concentrated both in some hydrothermal sulfide deposits and in pegmatites, greisens, and skarns. In sulfide deposits that formed from solutions having low to moderate sulfur activity, Ge is concentrated in sphalerite in amounts up to 3000 ppm. Sulfide deposits that formed from solutions having higher sulfur activity allowed Ge to either form its own sulfides, particularly with Cu, or to substitute for As, Sn, or other metals in sulfosalts. The Ge in hydrothermal fluids probably derives from enrichment during the fractional crystallization of igneous fluids, or is due to the incorporation of Ge from the country rocks, particularly from those containing organic material. Germanium bonds to lignin-derivative organic compounds that are found in peat and lignite, accounting for its common concentration in coals and related organic material. Germanium is precipitated from water together with iron hydroxide, accounting for its concentration in some sedimentary and supergene iron oxide deposits. It also is able to substitute for Fe in magnetite in a variety of geologic environments. In the oxidized zone of Ge-bearing sulfide deposits, Ge is concentrated in oxides, hydroxides, and hydroxy-sulfates, sometimes forming its own minerals. It is particularly

  13. Hafnium germanium telluride

    Science.gov (United States)

    Jang, Gyung-Joo; Yun, Hoseop

    2008-01-01

    The title hafnium germanium telluride, HfGeTe4, has been synthesized by the use of a halide flux and structurally characterized by X-ray diffraction. HfGeTe4 is isostructural with stoichiometric ZrGeTe4 and the Hf site in this compound is also fully occupied. The crystal structure of HfGeTe4 adopts a two-dimensional layered structure, each layer being composed of two unique one-dimensional chains of face-sharing Hf-centered bicapped trigonal prisms and corner-sharing Ge-centered tetra­hedra. These layers stack on top of each other to complete the three-dimensional structure with undulating van der Waals gaps. PMID:21202163

  14. Hafnium germanium telluride

    Directory of Open Access Journals (Sweden)

    Hoseop Yun

    2008-05-01

    Full Text Available The title hafnium germanium telluride, HfGeTe4, has been synthesized by the use of a halide flux and structurally characterized by X-ray diffraction. HfGeTe4 is isostructural with stoichiometric ZrGeTe4 and the Hf site in this compound is also fully occupied. The crystal structure of HfGeTe4 adopts a two-dimensional layered structure, each layer being composed of two unique one-dimensional chains of face-sharing Hf-centered bicapped trigonal prisms and corner-sharing Ge-centered tetrahedra. These layers stack on top of each other to complete the three-dimensional structure with undulating van der Waals gaps.

  15. The Primary and Secondary Production of Germanium: A Life-Cycle Assessment of Different Process Alternatives

    Science.gov (United States)

    Robertz, Benedicte; Verhelle, Jensen; Schurmans, Maarten

    2015-02-01

    Germanium is a semiconducting metalloid element used in optical fibers, catalysis, infrared optics, solar cells, and light-emitting diodes. The need for Ge in these markets is considered to increase by a steady ~1% on a yearly basis. Its economic importance, coupled with the identified supply risks, has led to the classification of germanium as a critical raw material within Europe. Since the early 1950s, Umicore Electro-Optic Materials has supplied germanium-based materials solutions to its markets around the world. Umicore extracts germanium from a wide range of refining and recycling feeds. The main objectives of this study were to quantify the potential environmental impacts of the production of germanium from production scraps from the photovoltaic industry and to compare them with the potential impacts of the primary production of germanium from coal. The data related to the secondary production are Umicore-specific data. Environmental impact scores have been calculated for the impact categories recommended by the International reference life cycle data system. The comparison of the primary and secondary production highlights the benefit linked to the recycling of metals.

  16. Status report on the International Germanium Experiment

    Energy Technology Data Exchange (ETDEWEB)

    Brodzinski, R.L.; Avignone, F.T.; Collar, J.I.; Courant, H.; Garcia, E.; Guerard, C.K.; Hensley, W.K.; Kirpichnikov, I.V.; Miley, H.S.; Morales, A.; Morales, J.; Nunez-Lagos, R.; Osetrov, S.B.; Pogosov, V.S.; Pomansky, A.A.; Puimedon, J.; Reeves, J.H.; Ruddick, K.; Saenz, C.; Salinas, A.; Sarsa, M.L.; Smolnikov, A.A.; Starostin, A.S.; Tamanyan, A.G.; Vasiliev, S.I.; Villar, J.A. (Pacific Northwest Lab., Richland, WA (United States) Univ. of South Carolina, Columbia, SC (United States) Univ. of Minnesota, Minneapolis, MN (United States) Univ. of Zaragoza (Spain) Inst. for Theoretical and Experimental Physics, Moscow (Russian Federation) Inst. for Nuclear Research, Baksan Neutrino Observatory (Russian Federation) Yerevan Physical Inst., Yerevan (Armenia))

    1993-04-01

    Phase II detector fabrication for the International Germanium Experiment is in progress. Sources of background observed during Phase I are discussed. Cosmogenic [sup 7]Be is measured in germanium. Radium contamination, presumably in electroformed copper, is reported. (orig.)

  17. Status report on the International Germanium Experiment

    Science.gov (United States)

    Brodzinski, R. L.; Avignone, F. T.; Collar, J. I.; Courant, H.; García, E.; Guerard, C. K.; Hensley, W. K.; Kirpichnikov, I. V.; Miley, H. S.; Morales, A.; Morales, J.; Núñez-Lagos, R.; Osetrov, S. B.; Pogosov, V. S.; Pomansky, A. A.; Puimedón, J.; Reeves, J. H.; Ruddick, K.; Sáenz, C.; Salinas, A.; Sarsa, M. L.; Smolnikov, A. A.; Starostin, A. S.; Tamanyan, A. G.; Vasiliev, S. I.; Villar, J. A.

    1993-04-01

    Phase II detector fabrication for the International Germanium Experiment is in progress. Sources of background observed during Phase I are discussed. Cosmogenic 7Be is measured in germanium. Radium contamination, presumably in electroformed copper, is reported.

  18. The Germanium Dichotomy in Martian Meteorites

    Science.gov (United States)

    Humayun, M.; Yang, S.; Righter, K.; Zanda, B.; Hewins, R. H.

    2016-01-01

    Germanium is a moderately volatile and siderophile element that follows silicon in its compatibility during partial melting of planetary mantles. Despite its obvious usefulness in planetary geochemistry germanium is not analyzed routinely, with there being only three prior studies reporting germanium abundances in Martian meteorites. The broad range (1-3 ppm) observed in Martian igneous rocks is in stark contrast to the narrow range of germanium observed in terrestrial basalts (1.5 plus or minus 0.1 ppm). The germanium data from these studies indicates that nakhlites contain 2-3 ppm germanium, while shergottites contain approximately 1 ppm germanium, a dichotomy with important implications for core formation models. There have been no reliable germanium abundances on chassignites. The ancient meteoritic breccia, NWA 7533 (and paired meteorites) contains numerous clasts, some pristine and some impact melt rocks, that are being studied individually. Because germanium is depleted in the Martian crust relative to chondritic impactors, it has proven useful as an indicator of meteoritic contamination of impact melt clasts in NWA 7533. The germanium/silicon ratio can be applied to minerals that might not partition nickel and iridium, like feldspars. We report germanium in minerals from the 3 known chassignites, 2 nakhlites and 5 shergottites by LAICP- MS using a method optimized for precise germanium analysis.

  19. Schottky diodes from 2D germanane

    Science.gov (United States)

    Sahoo, Nanda Gopal; Esteves, Richard J.; Punetha, Vinay Deep; Pestov, Dmitry; Arachchige, Indika U.; McLeskey, James T.

    2016-07-01

    We report on the fabrication and characterization of a Schottky diode made using 2D germanane (hydrogenated germanene). When compared to germanium, the 2D structure has higher electron mobility, an optimal band-gap, and exceptional stability making germanane an outstanding candidate for a variety of opto-electronic devices. One-atom-thick sheets of hydrogenated puckered germanium atoms have been synthesized from a CaGe2 framework via intercalation and characterized by XRD, Raman, and FTIR techniques. The material was then used to fabricate Schottky diodes by suspending the germanane in benzonitrile and drop-casting it onto interdigitated metal electrodes. The devices demonstrate significant rectifying behavior and the outstanding potential of this material.

  20. Schottky diodes from 2D germanane

    Energy Technology Data Exchange (ETDEWEB)

    Sahoo, Nanda Gopal; Punetha, Vinay Deep [Nanoscience and Nanotechnology Centre, Department of Chemistry, Kumaun University, Nainital, 263001 Uttarakhand (India); Esteves, Richard J; Arachchige, Indika U. [Department of Chemistry, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Pestov, Dmitry [Nanomaterials Core Characterization Center, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); McLeskey, James T., E-mail: JamesMcLeskey@rmc.edu [Department of Physics, Randolph-Macon College, Ashland, Virginia 23005 (United States)

    2016-07-11

    We report on the fabrication and characterization of a Schottky diode made using 2D germanane (hydrogenated germanene). When compared to germanium, the 2D structure has higher electron mobility, an optimal band-gap, and exceptional stability making germanane an outstanding candidate for a variety of opto-electronic devices. One-atom-thick sheets of hydrogenated puckered germanium atoms have been synthesized from a CaGe{sub 2} framework via intercalation and characterized by XRD, Raman, and FTIR techniques. The material was then used to fabricate Schottky diodes by suspending the germanane in benzonitrile and drop-casting it onto interdigitated metal electrodes. The devices demonstrate significant rectifying behavior and the outstanding potential of this material.

  1. Study on the local atomic structure of germanium in organic germanium compounds by EXAFS

    Institute of Scientific and Technical Information of China (English)

    1999-01-01

    Organic germanium compounds have been extensively applied in medicine as tonics,In this paper,the local structures of two organic germanium compounds,carboxyethylgermanium sesquioxide and polymeric germanium glutamate,were determined by EXAFS.The structure parameters including coordination numbers and bond lengths were reported,and possible structure patterns were discussed.

  2. Harmonic Lattice Dynamics of Germanium

    Energy Technology Data Exchange (ETDEWEB)

    Nelin, G.

    1974-07-01

    The phonon dispersion relations of the DELTA-, LAMBDA-, and SIGMA-directions of germanium at 80 K are analysed in terms of current harmonic lattice dynamical models. On the basis of this experience, a new model is proposed which gives a unified account of the strong points of the previous models. The principal elements of the presented theory are quasiparticle bond charges combined with a valence force field.

  3. Black Germanium fabricated by reactive ion etching

    Science.gov (United States)

    Steglich, Martin; Käsebier, Thomas; Kley, Ernst-Bernhard; Tünnermann, Andreas

    2016-09-01

    A reactive ion etching technique for the preparation of statistical "Black Germanium" antireflection surfaces, relying on self-organization in a Cl2 etch chemistry, is presented. The morphology of the fabricated Black Germanium surfaces is the result of a random lateral distribution of pyramidal etch pits with heights around (1450 ± 150) nm and sidewall angles between 80° and 85°. The pyramids' base edges are oriented along the crystal directions of Germanium, indicating a crystal anisotropy of the etching process. In the Vis-NIR, the tapered Black Germanium surface structure suppresses interface reflection to structure in optoelectronics and IR optics.

  4. Hydrothermal synthesis of bismuth germanium oxide

    Energy Technology Data Exchange (ETDEWEB)

    Boyle, Timothy J.

    2016-12-13

    A method for the hydrothermal synthesis of bismuth germanium oxide comprises dissolving a bismuth precursor (e.g., bismuth nitrate pentahydrate) and a germanium precursor (e.g., germanium dioxide) in water and heating the aqueous solution to an elevated reaction temperature for a length of time sufficient to produce the eulytite phase of bismuth germanium oxide (E-BGO) with high yield. The E-BGO produced can be used as a scintillator material. For example, the air stability and radioluminescence response suggest that the E-BGO can be employed for medical applications.

  5. Structural Design Parameters for Germanium

    Science.gov (United States)

    Salem, Jon; Rogers, Richard; Baker, Eric

    2017-01-01

    The fracture toughness and slow crack growth parameters of germanium supplied as single crystal beams and coarse grain disks were measured. Although germanium is anisotropic (A* 1.7), it is not as anisotropic as SiC, NiAl, or Cu. Thus the fracture toughness was similar on the 100, 110, and 111 planes, however, measurements associated with randomly oriented grinding cracks were 6 to 30 higher. Crack extension in ring loaded disks occurred on the 111 planes due to both the lower fracture energy and the higher stresses on stiff 111 planes. Germanium exhibits a Weibull scale effect, but does not exhibit significant slow crack growth in distilled water. (n 100), implying that design for quasi static loading can be performed with scaled strength statistics. Practical values for engineering design are a fracture toughness of 0.69 0.02 MPam (megapascals per square root meter) and a Weibull modulus of m 6 2. For well ground and reasonable handled coupons, average fracture strength should be greater than 40 megapascals. Aggregate, polycrystalline elastic constants are Epoly 131 gigapascals, vpoly 0.22.

  6. Laser synthesis of germanium tin alloys on virtual germanium

    Science.gov (United States)

    Stefanov, S.; Conde, J. C.; Benedetti, A.; Serra, C.; Werner, J.; Oehme, M.; Schulze, J.; Buca, D.; Holländer, B.; Mantl, S.; Chiussi, S.

    2012-03-01

    Synthesis of heteroepitaxial germanium tin (GeSn) alloys using excimer laser processing of a thin 4 nm Sn layer on Ge has been demonstrated and studied. Laser induced rapid heating, subsequent melting, and re-solidification processes at extremely high cooling rates have been experimentally achieved and also simulated numerically to optimize the processing parameters. "In situ" measured sample reflectivity with nanosecond time resolution was used as feedback for the simulations and directly correlated to alloy composition. Detailed characterization of the GeSn alloys after the optimization of the processing conditions indicated substitutional Sn concentration of up to 1% in the Ge matrix.

  7. Germanium multiphase equation of state

    Science.gov (United States)

    Crockett, S. D.; De Lorenzi-Venneri, G.; Kress, J. D.; Rudin, S. P.

    2014-05-01

    A new SESAME multiphase germanium equation of state (EOS) has been developed utilizing the best available experimental data and density functional theory (DFT) calculations. The equilibrium EOS includes the Ge I (diamond), the Ge II (β-Sn) and the liquid phases. The foundation of the EOS is based on density functional theory calculations which are used to determine the cold curve and the Debye temperature. Results are compared to Hugoniot data through the solid-solid and solid-liquid transitions. We propose some experiments to better understand the dynamics of this element.

  8. Silicon Germanium Quantum Well Solar Cell Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Quantum-well structures embodied on single crystal silicon germanium drastically enhanced carrier mobilities.  The cell-to-cell circuits of quantum-well PV...

  9. Metal induced crystallization of silicon germanium alloys

    Energy Technology Data Exchange (ETDEWEB)

    Gjukic, M.

    2007-05-15

    In the framework of this thesis the applicability of the aluminium-induced layer exchange on binary silicon germanium alloys was studied. It is here for the first time shown that polycrstalline silicon-germanium layers can be fabricated over the whole composition range by the aluminium-induced layer exchange. The experimental results prove thet the resulting material exhibits a polycrystalline character with typocal grain sizes of 10-100 {mu}m. Raman measurements confirm that the structural properties of the resulting layers are because of the large crystallites more comparable with monocrystalline than with nano- or microcrystalline silicon-germanium. The alloy ratio of the polycrystalline layer correspondes to the chemical composition of the amorphous starting layer. The polycrystalline silicon-germanium layers possess in the range of the interband transitions a reflection spectrum, as it is otherwise only known from monocrystalline reference layers. The improvement of the absorption in the photovoltaically relevant spectral range aimed by the application of silicon-germanium could be also proved by absorption measurments. Strongly correlated with the structural properties of the polycrystalline layers and the electronic band structure resulting from this are beside the optical properties also the electrical properties of the material, especially the charge-carrier mobility and the doping concentration. For binary silicon-germanium layers the hole concentration of about 2 x 10{sup 18} cm{sup -3} for pure silicon increrases to about 5 x 10{sup 20} cm{sub -3} for pure germanium. Temperature-resolved measurements were applied in order to detect doping levels respectively semiconductor-metal transitions. In the last part of the thesis the hydrogen passivation of polycrystalline thin silicon-germanium layers, which were fabricated by means of aluminium-induced layer exchange, is treated.

  10. Germanium content in Polish hard coals

    Directory of Open Access Journals (Sweden)

    Makowska Dorota

    2016-01-01

    Full Text Available Due to the policy of the European Union, it is necessary to search for new sources of scarce raw materials. One of these materials is germanium, listed as a critical element. This semi-metal is widely used in the electronics industry, for example in the production of semiconductors, fibre optics and solar cells. Coal and fly ash from its combustion and gasification for a long time have been considered as a potential source of many critical elements, particularly germanium. The paper presents the results of germanium content determination in the Polish hard coal. 23 coal samples of various coal ranks were analysed. The samples were collected from 15 mines of the Upper Silesian Coal Basin and from one mine of the Lublin Coal Basin. The determination of germanium content was performed with the use of Atomic Absorption Spectrometry with Electrothermal Atomization (GFAAS. The investigation showed that germanium content in the analysed samples was at least twice lower than the average content of this element in the hard coals analysed so far and was in the range of 0.08 ÷ 1.28 mg/kg. Moreover, the content of Ge in the ashes from the studied coals does not exceed 15 mg/kg, which is lower than the average value of Ge content in the coal ashes. The highest content of this element characterizes coals of the Lublin Coal Basin and young coals type 31 from the Vistula region. The results indicate a low utility of the analysed coal ashes as a source of the recovery of germanium. On the basis of the analyses, the lack of the relationship between the content of the element and the ash content in the tested coals was noted. For coals of the Upper Silesian Coal Basin, the relationship between the content of germanium in the ashes and the depth of the seam was observed.

  11. The study of laser beam riding guided system based on 980nm diode laser

    Science.gov (United States)

    Qu, Zhou; Xu, Haifeng; Sui, Xin; Yang, Kun

    2015-10-01

    With the development of science and technology, precision-strike weapons has been considered to be important for winning victory in military field. Laser guidance is a major method to execute precision-strike in modern warfare. At present, the problems of primary stage of Laser guidance has been solved with endeavors of countries. Several technical aspects of laser-beam riding guided system have been mature, such as atmosphere penetration of laser beam, clutter inhibition on ground, laser irradiator, encoding and decoding of laser beam. Further, laser beam quality, equal output power and atmospheric transmission properties are qualified for warfare situation. Riding guidance instrument is a crucial element of Laser-beam riding guided system, and is also a vital element of airborne, vehicle-mounted and individual weapon. The optical system mainly consist of sighting module and laser-beam guided module. Photoelectric detector is the most important sensing device of seeker, and also the key to acquire the coordinate information of target space. Currently, in consideration of the 1.06 u m of wavelength applied in all the semi-active laser guided weapons systems, lithium drifting silicon photodiode which is sensitive to 1.06 u m of wavelength is used in photoelectric detector. Compared to Solid and gas laser, diode laser has many merits such as small volume, simple construction, light weight, long life, low lost and easy modulation. This article introduced the composition and operating principle of Laser-beam riding guided system based on 980 nm diode laser, and made a analysis of key technology; for instance, laser irradiator, modulating disk of component, laser zooming system. Through the use of laser diode, Laser-beam riding guided system is likely to have smaller shape and very light.

  12. Recovering germanium from coal ash by chlorination with ammonium chloride

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    A new process of enriching germanium from coal ash was developed. The process involves in mixing the coal ash and ammonium chloride and then roasting the mixture to produce germanium chloride that is then absorbed by dilute hydrochloric acid and hydrolyzed to germanium oxide. The germanium recovery reached to 80.2% at the optimum condition: mass ratio of NH4Cl/coal ash is 0.15, roasting temperature 400℃ and roasting time 90 min.

  13. Germanium nanowires grown using different catalyst metals

    Energy Technology Data Exchange (ETDEWEB)

    Gouveia, R.C., E-mail: riama@ifsp.edu.br [Departamento de Física – NanO Lab, Universidade Federal de São Carlos, Rod. Washington Luís, Km 235 – SP 310, São Carlos, CEP 13565-905 (Brazil); Área de Ciências, Instituto Federal de Educação Ciência e Tecnologia de São Paulo, Rua Américo Ambrósio, 269, Jd. Canaã, Sertãozinho, CEP 14169-263 (Brazil); Kamimura, H.; Munhoz, R.; Rodrigues, A.D. [Departamento de Física – NanO Lab, Universidade Federal de São Carlos, Rod. Washington Luís, Km 235 – SP 310, São Carlos, CEP 13565-905 (Brazil); Leite, E.R. [Departamento de Química – LIEC, Universidade Federal de São Carlos, São Carlos, CEP 13565-905 (Brazil); Chiquito, A.J. [Departamento de Física – NanO Lab, Universidade Federal de São Carlos, Rod. Washington Luís, Km 235 – SP 310, São Carlos, CEP 13565-905 (Brazil)

    2016-11-01

    Germanium nanowires have been synthesized by the well known vapor-liquid-solid growth mechanism using gold, silver, cooper, indium and nickel as catalyst metals. The influence of metal seeds on nanowires structural and electronic transport properties was also investigated. Electron microscopy images demonstrated that, despite differences in diameters, all nanowires obtained presented single crystalline structures. X-ray patterns showed that all nanowires were composed by germanium with a small amount of germanium oxide, and the catalyst metal was restricted at the nanowires' tips. Raman spectroscopy evidenced the long range order in the crystalline structure of each sample. Electrical measurements indicated that variable range hopping was the dominant mechanism in carrier transport for all devices, with similar hopping distance, regardless the material used as catalyst. Then, in spite of the differences in synthesis temperatures and nanowires diameters, the catalyst metals have not affected the composition and crystalline quality of the germanium nanowires nor the carrier transport in the germanium nanowire network devices. - Highlights: • Ge nanowires were grown by VLS method using Au, Ag, Cu, In and Ni as catalysts. • All nanowires presented high single crystalline quality and long range order. • Devices showed semiconducting behavior having VRH as dominant transport mechanism. • The metal catalyst did not influence structural properties or the transport mechanism.

  14. Front End Spectroscopy ASIC for Germanium Detectors

    Science.gov (United States)

    Wulf, Eric

    Large-area, tracking, semiconductor detectors with excellent spatial and spectral resolution enable exciting new access to soft (0.2-5 MeV) gamma-ray astrophysics. The improvements from semiconductor tracking detectors come with the burden of high density of strips and/or pixels that require high-density, low-power, spectroscopy quality readout electronics. CMOS ASIC technologies are a natural fit to this requirement and have led to high-quality readout systems for all current semiconducting tracking detectors except for germanium detectors. The Compton Spectrometer and Imager (COSI), formerly NCT, at University of California Berkeley and the Gamma-Ray Imager/Polarimeter for Solar flares (GRIPS) at Goddard Space Flight Center utilize germanium cross-strip detectors and are on the forefront of NASA's Compton telescope research with funded missions of long duration balloon flights. The development of a readout ASIC for germanium detectors would allow COSI to replace their discrete electronics readout and would enable the proposed Gamma-Ray Explorer (GRX) mission utilizing germanium strip-detectors. We propose a 3-year program to develop and test a germanium readout ASIC to TRL 5 and to integrate the ASIC readout onto a COSI detector allowing a TRL 6 demonstration for the following COSI balloon flight. Our group at NRL led a program, sponsored by another government agency, to produce and integrate a cross-strip silicon detector ASIC, designed and fabricated by Dr. De Geronimo at Brookhaven National Laboratory. The ASIC was designed to handle the large (>30 pF) capacitance of three 10 cm^2 detectors daisy-chained together. The front-end preamplifier, selectable inverter, shaping times, and gains make this ASIC compatible with a germanium cross-strip detector as well. We therefore have the opportunity and expertise to leverage the previous investment in the silicon ASIC for a new mission. A germanium strip detector ASIC will also require precise timing of the signals at

  15. Extrinsic germanium Blocked Impurity Bank (BIB) detectors

    Science.gov (United States)

    Krabach, Timothy N.; Huffman, James E.; Watson, Dan M.

    1989-01-01

    Ge:Ga blocked-impurity-band (BIB) detectors with long wavelength thresholds greater than 190 microns and peak quantum efficiencies of 4 percent, at an operating temperature of 1.8 K, have been fabricated. These proof of concept devices consist of a high purity germanium blocking layer epitaxially grown on a Ga-doped Ge substrate. This demonstration of BIB behavior in germanium enables the development of far infrared detector arrays similar to the current silicon-based devices. Present efforts are focussed on improving the chemical vapor deposition process used to create the blocking layer and on the lithographic processing required to produce monolithic detector arrays in germanium. Approaches to test the impurity levels in both the blocking and active layers are considered.

  16. Status report on the International Germanium Experiment

    Energy Technology Data Exchange (ETDEWEB)

    Brodzinski, R.L.; Hensley, W.K.; Miley, H.S.; Reeves, J.H. [Pacific Northwest Lab., Richland, WA (United States); Avignone, F.T.; Collar, J.I.; Guerard, C.K. [South Carolina Univ., Columbia, SC (United States); Courant, H.; Ruddick, K. [Minnesota Univ., Minneapolis, MN (United States); Kirpichnikov, I.V.; Starostin, A.S. [AN SSSR, Moscow (Russian Federation). Inst. Teoreticheskoj i Eksperimental`noj Fiziki; Garcia, E.; Morales, A.; Morales, J.; Nunez-Lagos, R.; Puimedon, J.; Saenz, C.; Salinas, A.; Sarasa, M.L.; Villar, J.A. [Zaragoza Univ. (Spain); Osetrov, S.B.; Pomansky, A.A.; Smolnikov, A.A.; Vasiliev, S.I. [AN SSSR, Moscow (Russian Federation). Inst. Yadernykh Issledovanij; Pogosov, V.S.; Tamanyan, A.G. [Erevanskij Fizicheskij Inst., Erevan (Armenia)

    1992-06-01

    Phase II detector fabrication for the International Germanium Experiment is awaiting resolution of technical details observed during Phase I. Measurements of fiducial volume, configuration of the tansistor-reset preamplifier stage, and sources of background are discussed. Cosmogenic {sup 7}Be is measured in germanium. Radium contamination in electroformed copper reported. The 2{nu} double- beta decay half-life of {sup 76}Ge measured with a Phase I detector is in reasonable agreement with previously reported values. No events are observed in the vicinity of the O{nu} double-beta decay energy.

  17. Neutron-transmutation-doped germanium bolometers

    Science.gov (United States)

    Palaio, N. P.; Rodder, M.; Haller, E. E.; Kreysa, E.

    1983-01-01

    Six slices of ultra-pure germanium were irradiated with thermal neutron fluences between 7.5 x 10 to the 16th and 1.88 x 10 to the 18th per sq cm. After thermal annealing the resistivity was measured down to low temperatures (less than 4.2 K) and found to follow the relationship rho = rho sub 0 exp(Delta/T) in the hopping conduction regime. Also, several junction FETs were tested for noise performance at room temperature and in an insulating housing in a 4.2 K cryostat. These FETs will be used as first stage amplifiers for neutron-transmutation-doped germanium bolometers.

  18. Status of the Germanium Detector Array (GERDA) in the search of neutrinoless ββ decays of 76Ge at LNGS

    Science.gov (United States)

    Schönert, S.; Abt, I.; Altmann, M.; Bakalyarov, A. M.; Barabanov, I.; Bauer, C.; Bauer, M.; Bellotti, E.; Belogurov, S.; Belyaev, S. T.; Bettini, A.; Bezrukov, L.; Brudanin, V.; Bolotsky, V. P.; Caldwell, A.; Cattadori, C.; Chirchenko, M. V.; Chkvorets, O.; Demidova, E.; di Vacri, A.; Eberth, J.; Egorov, V.; Farnea, E.; Gangapshev, A.; Gasparro, J.; Grabmayr, P.; Grigoriev, G. Y.; Gurentsov, V.; Gusev, K.; Hampel, W.; Heusser, G.; Heisel, M.; Hofmann, W.; Hult, M.; Inzhechik, L. V.; Jochum, J.; Junker, M.; Katulina, S.; Kiko, J.; Kirpichnikov, I. V.; Klimenko, A.; Knapp, M.; Knöpfle, K. T.; Kochetov, O.; Kornoukhov, V. N.; Kröninger, K.; Kuzminov, V. V.; Laubenstein, M.; Lebedev, V. I.; Liu, X.; Majorovits, B.; Marissens, G.; Nemchenok, I.; Pandola, L.; Peiffer, P.; Pullia, A.; Alvarez, C. R.; Sandukovsky, V.; Scholl, S.; Schreiner, J.; Schwan, U.; Schwingenheuer, B.; Simgen, H.; Smolnikov, A.; Stelzer, F.; Tikhomirov, A. V.; Tomei, C.; Ur, C. A.; Vasenko, A. A.; Vasiliev, S.; Weißhaar, D.; Wojcik, M.; Yanovich, E.; Yurkowski, J.; Zhukov, S. V.; Zocca, F.; Zuzel, G.

    2006-12-01

    The Germanium Detector Array (GERDA) in the search for neutrinoless ββ decays of 76Ge at LNGS will operate bare germanium diodes enriched in 76Ge in an (optional active) cryogenic fluid shield to investigate neutrinoless ββ decay with a sensitivity of T 1/2 > 2 × 1026 yr after an exposure of 100 kg yr. Recent progress includes the installation of the first underground infrastructures at Gran Sasso, the completion of the enrichment of 37.5 kg of germanium material for detector construction, prototyping of low-mass detector support and contacts, and front-end and DAQ electronics, as well as the preparation for construction of the cryogenic vessel and water tank.

  19. Interstitial oxygen in germanium and silicon

    Energy Technology Data Exchange (ETDEWEB)

    Artacho, E.; Yndurain, F. [Instituto Nicolas Cabrera and Departamento de Fisica de la Materia Condensada, C-III Universidad Autonoma de Madrid, 28049 Madrid (Spain); Pajot, B. [Groupe de Physique des Solides (Unite Associee au CNRS), Tour 23, Universite Denis Diderot, 2 Place Jussieu, 75251 Paris Cedex 05 (France); Ramirez, R.; Herrero, C.P. [Instituto de Ciencia de Materiales, Consejo Superior de Investigaciones Cientificas, Cantoblanco, 28049 Madrid (Spain); Khirunenko, L.I. [Institute of Physics, National Academy of Sciences of Ukraine, Prospect Nauki 46, 252650 Kiev 22 (Ukraine); Itoh, K.M. [Department of Applied Physics and Physico-Informatics, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223 (Japan); Haller, E.E. [Lawrence Berkeley National Laboratory and University of California, Berkeley, California 94720 (United States)

    1997-08-01

    The microscopic structure of interstitial oxygen in germanium and its associated dynamics are studied both experimentally and theoretically. The infrared absorption spectrum is calculated with a dynamical matrix model based on first-principles total-energy calculations describing the potential energy for the nuclear motions. Spectral features and isotope shifts are calculated and compared with available experimental results. From new spectroscopic data on natural and on quasimonoisotopic germanium samples, new isotope shifts have been obtained and compared with the theoretical predictions. The low-energy spectrum is analyzed in terms of a hindered rotor model. A fair understanding of the center is achieved, which is then compared with interstitial oxygen in silicon. The oxygen atom is nontrivially quantum delocalized both in silicon and in germanium, but the physics is shown to be very different: while the Si-O-Si quasimolecule is essentially linear, the Ge-O-Ge structure is puckered. The delocalization in a highly anharmonic potential well of oxygen in silicon is addressed using path-integral Monte Carlo simulations, for comparison with the oxygen rotation in germanium. The understanding achieved with this new information allows us to explain the striking differences between both systems, in both the infrared and the far-infrared spectral regions, and the prediction of the existence of hidden vibrational modes, never directly observed experimentally, but soundly supported by the isotope-shift analysis. {copyright} {ital 1997} {ital The American Physical Society}

  20. Interstitial oxygen in germanium and silicon

    Science.gov (United States)

    Artacho, Emilio; Ynduráin, Félix; Pajot, Bernard; Ramírez, Rafael; Herrero, Carlos P.; Khirunenko, Ludmila I.; Itoh, Kohei M.; Haller, Eugene E.

    1997-08-01

    The microscopic structure of interstitial oxygen in germanium and its associated dynamics are studied both experimentally and theoretically. The infrared absorption spectrum is calculated with a dynamical matrix model based on first-principles total-energy calculations describing the potential energy for the nuclear motions. Spectral features and isotope shifts are calculated and compared with available experimental results. From new spectroscopic data on natural and on quasimonoisotopic germanium samples, new isotope shifts have been obtained and compared with the theoretical predictions. The low-energy spectrum is analyzed in terms of a hindered rotor model. A fair understanding of the center is achieved, which is then compared with interstitial oxygen in silicon. The oxygen atom is nontrivially quantum delocalized both in silicon and in germanium, but the physics is shown to be very different: while the Si-O-Si quasimolecule is essentially linear, the Ge-O-Ge structure is puckered. The delocalization in a highly anharmonic potential well of oxygen in silicon is addressed using path-integral Monte Carlo simulations, for comparison with the oxygen rotation in germanium. The understanding achieved with this new information allows us to explain the striking differences between both systems, in both the infrared and the far-infrared spectral regions, and the prediction of the existence of hidden vibrational modes, never directly observed experimentally, but soundly supported by the isotope-shift analysis.

  1. Comparison of organic and inorganic germanium compounds in cellular radiosensitivity and preparation of germanium nanoparticles as a radiosensitizer.

    Science.gov (United States)

    Lin, Ming-Hsing; Hsu, Tzu-Sheng; Yang, Pei-Ming; Tsai, Meng-Yen; Perng, Tsong-Pyng; Lin, Lih-Yuan

    2009-03-01

    The aim of this work is to compare the radiosensitizing effect between organic and inorganic germanium compounds and to investigate whether nanometer-sized germanium particles can act as radiosensitizers. Bis (2-carboxyethylgermanium) sesquioxide (Ge-132), germanium oxide (GeO(2)) and germanium nanoparticles were used in this study. Cell viability was determined by clonogenic survival assay. Cellular DNA damage was evaluated by alkaline comet assay, confocal microscopy and the cellular level of phospho-histone H2AX (gamma-H2AX). Nanometer-sized germanium particles were fabricated. They have a similar radiosensitizing effect as that of GeO(2). Conversely, Ge-132 did not enhance the radiosensitivity of cells. Comet assay was employed to evaluate the level of DNA damage and confirmed that inorganic germanium compounds enhanced cellular radiosensitivity. Notably, the comet assay indicated that the nanoparticle itself caused a higher level of DNA damage. The possibility that germanium nanoparticles per se caused DNA damage was ruled out when the cellular level of gamma-H2AX was examined. We demonstrated that inorganic but not organic germanium compounds exerted radiosensitizing effect in cells. Nanometer-sized germanium particles were fabricated and were able to enhance the radiosensitivity of cells. Confounding effect may occur when comet assay is used to estimate the level of DNA damage in the presence of germanium nanoparticles.

  2. The International Germanium Experiment (IGEX) in 1993

    Energy Technology Data Exchange (ETDEWEB)

    Avignone, F.T. (University of South Carolina, Columbia, SC 29208 (United States)); Brodzinski, R.L. (Pacific Northwest Laboratory, Battelle Blvd., Richland, WA 99352 (United States)); Collar, J.I. (University of South Carolina, Columbia, SC 29208 (United States)); Courant, H. (University of Minnesota, Minneapolis, MN 55455 (United States)); Garcia, E. (University of Zaragoza, Zaragoza (Spain)); Guerard, C.K. (University of South Carolina, Columbia, SC 29208 (United States)); Hensley, W.K. (Pacific Northwest Laboratory, Battelle Blvd., Richland, WA 99352 (United States)); Kirpichnikov, I.V. (Institute for Theoretical and Experimental Physics, 117 259 Moscow (Russian Federation)); Klimenko, A.A. (Institute for Nuclear Research, Baksan Neutrino Observatory, 361 609 Neutrino (Russian Federation)); Morales, A. (University of Zaragoza, Zaragoza (Spain)); Morales, J. (University of Zaragoza, Zaragoza (Spain)); Miley, H.S. (Pacific Northwest Laboratory, Battelle Blvd., Richland, WA

    1994-05-01

    The data collected from the first set of three IGEX enriched germanium detectors have been analyzed. The best background obtained was less than 0.3counts/keV/kg/y near 2MeV, obtained in the Homestake gold mine in Lead, SD, USA. Data combined from all the detectors yield T[sub 1/2][sup 0][>=]qslant1.0x10[sup 24]y (90% CL). The first detector produced in the second phase of the experiment is a 2.15kg germanium crystal of 2.16keV FWHM at 1332keV. Several experiences with the first group of detectors have led to improvements in the mechanical design of the copper cryostat. Also, low background materials research done in the last two years has lowered the specific activity of the electroformed copper. The new detector is currently operating in the Homestake gold mine. ((orig.))

  3. The International Germanium Experiment (IGEX) in 1993

    Science.gov (United States)

    Avignone, F. T.; Brodzinski, R. L.; Collar, J. I.; Courant, H.; Garcia, E.; Guerard, C. K.; Hensley, W. K.; Kirpichnikov, I. V.; Klimenko, A. A.; Morales, A.; Morales, J.; Miley, H. S.; Nunez-Lagos, R.; Osetrov, S. B.; Pogosov, V. S.; Pomansky, A. A.; Puimedon, J.; Reeves, J. H.; Ruddick, K.; Saenz, C.; Salinas, A.; Sarsa, M. L.; Smolnikov, A. A.; Starostin, A. S.; Tamanyan, A. G.; Umatov, V. I.; Vasiliev, S. I.; Villar, J. A.

    1994-05-01

    The data collected from the first set of three IGEX enriched germanium detectors have been analyzed. The best background obtained was less than 0.3 counts/keV/kg/y near 2 MeV, obtained in the Homestake gold mine in Lead, SD, USA. Data combined from all the detectors yield T{1}/{2}0τ ≥ 1.0 × 10 24y (90% CL) . The first detector produced in the second phase of the experiment is a 2.15 kg germanium crystal of 2.16 keV FWHM at 1332 keV. Several experiences with the first group of detectors have led to improvements in the mechanical design of the copper cryostat. Also, low background materials research done in the last two years has lowered the specific activity of the electroformed copper. The new detector is currently operating in the Homestake gold mine.

  4. Spin transport in p-type germanium.

    Science.gov (United States)

    Rortais, F; Oyarzún, S; Bottegoni, F; Rojas-Sánchez, J-C; Laczkowski, P; Ferrari, A; Vergnaud, C; Ducruet, C; Beigné, C; Reyren, N; Marty, A; Attané, J-P; Vila, L; Gambarelli, S; Widiez, J; Ciccacci, F; Jaffrès, H; George, J-M; Jamet, M

    2016-04-27

    We report on the spin transport properties in p-doped germanium (Ge-p) using low temperature magnetoresistance measurements, electrical spin injection from a ferromagnetic metal and the spin pumping-inverse spin Hall effect method. Electrical spin injection is carried out using three-terminal measurements and the Hanle effect. In the 2-20 K temperature range, weak antilocalization and the Hanle effect provide the same spin lifetime in the germanium valence band (≈1 ps) in agreement with predicted values and previous optical measurements. These results, combined with dynamical spin injection by spin pumping and the inverse spin Hall effect, demonstrate successful spin accumulation in Ge. We also estimate the spin Hall angle θ(SHE) in Ge-p (6-7 x 10(-4) at room temperature, pointing out the essential role of ionized impurities in spin dependent scattering.

  5. Indium-carbon pairs in germanium

    Energy Technology Data Exchange (ETDEWEB)

    Tessema, G; Vianden, R [Helmholtz Institut fuer Strahlen-und Kernphysik, Universitaet Bonn, Nussallee 14-16, 53115 Bonn (Germany)

    2003-08-06

    The interactions of carbon with the probe nucleus {sup 111}In have been studied in germanium using the perturbed angular correlation method, which has the ability to detect the microscopic environments of the probe atom by means of the interaction of the nuclear moments of the probe with the surrounding electromagnetic fields. At high dose carbon implantation in germanium two complexes have been identified by their unique quadrupole interaction frequencies. An interaction frequency of {nu}{sub Q1} = 207(1) MHz ({eta} = 0.16(3)) appeared at annealing temperatures below 650 deg. C. Above 650 deg. C, it was replaced by a second interaction frequency of {nu}{sub Q2} 500(1) MHz ({eta} = 0). The frequencies are attributed to two different carbon-indium pairs. The orientation of the corresponding electric field gradients and the thermal stability of the defect complexes are studied.

  6. Vacancy-indium clusters in implanted germanium

    KAUST Repository

    Chroneos, Alexander I.

    2010-04-01

    Secondary ion mass spectroscopy measurements of heavily indium doped germanium samples revealed that a significant proportion of the indium dose is immobile. Using electronic structure calculations we address the possibility of indium clustering with point defects by predicting the stability of indium-vacancy clusters, InnVm. We find that the formation of large clusters is energetically favorable, which can explain the immobility of the indium ions. © 2010 Elsevier B.V. All rights reserved.

  7. Epitaxial silicon and germanium on buried insulator heterostructures and devices

    Science.gov (United States)

    Bojarczuk, N. A.; Copel, M.; Guha, S.; Narayanan, V.; Preisler, E. J.; Ross, F. M.; Shang, H.

    2003-12-01

    Future microelectronics will be based upon silicon or germanium-on-insulator technologies and will require an ultrathin (<10 nm), flat silicon or germanium device layer to reside upon an insulating oxide grown on a silicon wafer. The most convenient means of accomplishing this is by epitaxially growing the entire structure on a silicon substrate. This requires a high quality crystalline oxide and the ability to epitaxially grow two dimensional, single crystal films of silicon or germanium on top of this oxide. We describe a method based upon molecular beam epitaxy and solid-phase epitaxy to make such structures and demonstrate working field-effect transistors on germanium-on-insulator layers.

  8. Smooth germanium nanowires prepared by a hydrothermal deposition process

    Energy Technology Data Exchange (ETDEWEB)

    Pei, L.Z., E-mail: lzpei1977@163.com [School of Materials Science and Engineering, Institute of Molecular Engineering and Applied Chemistry, Key Laboratory of Materials Science and Processing of Anhui Province, Anhui University of Technology, Ma' anshan, Anhui 243002 (China); Zhao, H.S. [School of Materials Science and Engineering, Institute of Molecular Engineering and Applied Chemistry, Key Laboratory of Materials Science and Processing of Anhui Province, Anhui University of Technology, Ma' anshan, Anhui 243002 (China); Tan, W. [Henkel Huawei Electronics Co. Ltd., Lian' yungang, Jiangsu 222006 (China); Yu, H.Y. [School of Materials Science and Engineering, Institute of Molecular Engineering and Applied Chemistry, Key Laboratory of Materials Science and Processing of Anhui Province, Anhui University of Technology, Ma' anshan, Anhui 243002 (China); Chen, Y.W. [Department of Materials Science, Fudan University, Shanghai 200433 (China); Fan, C.G. [School of Materials Science and Engineering, Institute of Molecular Engineering and Applied Chemistry, Key Laboratory of Materials Science and Processing of Anhui Province, Anhui University of Technology, Ma' anshan, Anhui 243002 (China); Zhang, Qian-Feng, E-mail: zhangqf@ahut.edu.cn [School of Materials Science and Engineering, Institute of Molecular Engineering and Applied Chemistry, Key Laboratory of Materials Science and Processing of Anhui Province, Anhui University of Technology, Ma' anshan, Anhui 243002 (China)

    2009-11-15

    Smooth germanium nanowires were prepared using Ge and GeO{sub 2} as the starting materials and Cu sheet as the substrate by a simple hydrothermal deposition process. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) characterizations show that the germanium nanowires are smooth and straight with uniform diameter of about 150 nm in average and tens of micrometers in length. X-ray diffraction (XRD) and Raman spectrum of the germanium nanowires display that the germanium nanowires are mainly composed of cubic diamond phase. PL spectrum shows a strong blue light emission at 441 nm. The growth mechanism is also discussed.

  9. Bottom-up assembly of metallic germanium.

    Science.gov (United States)

    Scappucci, Giordano; Klesse, Wolfgang M; Yeoh, LaReine A; Carter, Damien J; Warschkow, Oliver; Marks, Nigel A; Jaeger, David L; Capellini, Giovanni; Simmons, Michelle Y; Hamilton, Alexander R

    2015-08-10

    Extending chip performance beyond current limits of miniaturisation requires new materials and functionalities that integrate well with the silicon platform. Germanium fits these requirements and has been proposed as a high-mobility channel material, a light emitting medium in silicon-integrated lasers, and a plasmonic conductor for bio-sensing. Common to these diverse applications is the need for homogeneous, high electron densities in three-dimensions (3D). Here we use a bottom-up approach to demonstrate the 3D assembly of atomically sharp doping profiles in germanium by a repeated stacking of two-dimensional (2D) high-density phosphorus layers. This produces high-density (10(19) to 10(20) cm(-3)) low-resistivity (10(-4)Ω · cm) metallic germanium of precisely defined thickness, beyond the capabilities of diffusion-based doping technologies. We demonstrate that free electrons from distinct 2D dopant layers coalesce into a homogeneous 3D conductor using anisotropic quantum interference measurements, atom probe tomography, and density functional theory.

  10. Platinum germanium ordering in UPtGe

    Science.gov (United States)

    Hoffmann, Rolf-Dieter; Pöttgen, Rainer; Lander, Gerry H.; Rebizant, Jean

    2001-09-01

    The non-centrosymmetric structure of UPtGe was investigated by X-ray diffraction on both powders and single crystals: EuAuGe type, Imm2, a=432.86(5), b=718.81(8), c=751.66(9) pm, wR2=0.0738 for 399 F2 values and 22 variables. The platinum and germanium atoms form two-dimensional layers of puckered Pt 3Ge 3 hexagons with short PtGe intralayer distances of 252 and 253 pm. These condensed two-dimensionally infinite nets are interconnected to each other via weak PtPt contacts with bond distances of 300 pm. The two crystallographically independent uranium atoms are situated above and below the six-membered platinum-germanium rings. The U1 atoms have six closer germanium neighbors while the U2 atoms have six closer platinum neighbors. The group-subgroup relation with the KHg 2 type structure is presented.

  11. Large-aperture germanium detector package for picosecond photon counting in the 0.5-1.6-microm range.

    Science.gov (United States)

    Prochazka, I; Hamal, K; Greene, B; Kunimori, H

    1996-09-01

    We report the design, construction, and parameters of a detector package based on a germanium avalanche photodiode operated in the Geiger mode cooled to 77 K. The new design of the active quenching circuit, proper diode structure, and cryogenic cooling setup permitted us to increase the detector's active area to 0.1-mm diameter while maintaining an acceptable dark-count rate, timing resolution, and photon-counting sensitivity at 1.54 microm. The active-area size and the compact design of the detector package permitted its application in satellite laser ranging at 0.532- and 1.543-microm wavelengths, yielding subcentimeter ranging precision.

  12. Germanium tin light emitters on silicon

    Science.gov (United States)

    Kasper, Erich; Oehme, Michael

    2015-04-01

    The energy and emission intensity of room temperature GeSn light emitting diodes based on Ge/GeSn/Ge pin heterostructures on Si substrates were investigated as function of Sn content for two series with different material properties. For good quality GeSn diodes an increase in emission intensity by a factor two compared to Ge diodes was measured and interpreted as proof of the reduction of the energy difference between indirect and direct bandgap. Compressive strain and nonradiative recombination were named as main obstacles for stronger emission intensities which are needed for electrically stimulated laser operation.

  13. Ultraviolet-light-induced processes in germanium-doped silica

    DEFF Research Database (Denmark)

    Kristensen, Martin

    2001-01-01

    A model is presented for the interaction of ultraviolet (UV) light with germanium-doped silica glass. It is assumed that germanium sites work as gates for transferring the excitation energy into the silica. In the material the excitation induces forbidden transitions to two different defect states...

  14. Fermi level de-pinning of aluminium contacts to n-type germanium using thin atomic layer deposited layers

    Energy Technology Data Exchange (ETDEWEB)

    Gajula, D. R., E-mail: dgajula01@qub.ac.uk; Baine, P.; Armstrong, B. M.; McNeill, D. W. [School of Electronics, Electrical Engineering and Computer Science, Queen' s University Belfast, Ashby Building, Stranmillis Road, Belfast BT9 5AH (United Kingdom); Modreanu, M.; Hurley, P. K. [Tyndall National Institute, University College Cork, Lee Maltings, Cork (Ireland)

    2014-01-06

    Fermi-level pinning of aluminium on n-type germanium (n-Ge) was reduced by insertion of a thin interfacial dielectric by atomic layer deposition. The barrier height for aluminium contacts on n-Ge was reduced from 0.7 eV to a value of 0.28 eV for a thin Al{sub 2}O{sub 3} interfacial layer (∼2.8 nm). For diodes with an Al{sub 2}O{sub 3} interfacial layer, the contact resistance started to increase for layer thicknesses above 2.8 nm. For diodes with a HfO{sub 2} interfacial layer, the barrier height was also reduced but the contact resistance increased dramatically for layer thicknesses above 1.5 nm.

  15. Monolithic integration of germanium-on-insulator p-i-n photodetector on silicon.

    Science.gov (United States)

    Nam, Ju Hyung; Afshinmanesh, Farzaneh; Nam, Donguk; Jung, Woo Shik; Kamins, Theodore I; Brongersma, Mark L; Saraswat, Krishna C

    2015-06-15

    A germanium-on-insulator (GOI) p-i-n photodetector, monolithically integrated on a silicon (Si) substrate, is demonstrated. GOI is formed by lateral-overgrowth (LAT-OVG) of Ge on silicon dioxide (SiO(2)) through windows etched in SiO(2) on Si. The photodetector shows excellent diode characteristics with high on/off ratio (6 × 10(4)), low dark current, and flat reverse current-voltage (I-V) characteristics. Enhanced light absorption up to 1550 nm is observed due to the residual biaxial tensile strain induced during the epitaxial growth of Ge caused by cooling after the deposition. This truly Si-compatible Ge photodetector using monolithic integration enables new opportunities for high-performance GOI based photonic devices on Si platform.

  16. MAJORANA Collaboration's Experience with Germanium Detectors

    Energy Technology Data Exchange (ETDEWEB)

    Mertens, S. [Lawrence Berkeley National Laboratory (LBNL); Abgrall, N. [Lawrence Berkeley National Laboratory (LBNL); Avignone, III, F. T. [University of South Carolina/Oak Ridge National Laboratory (ORNL); Barabash, A.S. [Institute of Theoretical & Experimental Physics (ITEP), Moscow, Russia; Bertrand, F. E. [Oak Ridge National Laboratory (ORNL); Efremenko, Yuri [University of Tennessee (UTK) and Oak Ridge National Laboratory (ORNL); Galindo-Uribarri, A [Oak Ridge National Laboratory (ORNL); Radford, D. C. [Oak Ridge National Laboratory (ORNL); Romero-Romero, E. [UTK/ORNL; Varner, R. L. [Oak Ridge National Laboratory (ORNL); White, B. R. [Oak Ridge National Laboratory (ORNL); Wilkerson, J. F. [UNC/Triangle Univ. Nucl. Lab, Durham, NC/ORNL; Yu, C.-H. [Oak Ridge National Laboratory (ORNL); Majorana, [MAJORANA Collaboration

    2015-01-01

    The goal of the Majorana Demonstrator project is to search for 0v beta beta decay in Ge-76. Of all candidate isotopes for 0v beta beta, Ge-76 has some of the most favorable characteristics. Germanium detectors are a well established technology, and in searches for 0v beta beta, the high purity germanium crystal acts simultaneously as source and detector. Furthermore, p-type germanium detectors provide excellent energy resolution and a specially designed point contact geometry allows for sensitive pulse shape discrimination. This paper will summarize the experiences the MAJORANA collaboration made with enriched germanium detectors manufactured by ORTEC (R)(R). The process from production, to characterization and integration in MAJORANA mounting structure will be described. A summary of the performance of all enriched germanium detectors will be given.

  17. Yunnan Chihong Zinc & Germanium Co.,Ltd.Invested RMB 300 Million for Germanium Project with Output 30 Tons/Year

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    <正>Recently,Yunnan Chihong Zinc & Germanium Co.,Ltd.,an A-share listed company held by Yunnan Metallurgical Group Co.,Ltd.,kicked off its construction of a project for comprehen- sive utilization of lead-zinc associated metal germanium resources to be output at 30 tons/year.It is introduced that the investment

  18. Silicon/Germanium Molecular Beam Epitaxy

    OpenAIRE

    2006-01-01

    Molecular Beam Epitaxy (MBE) is a well-established method to grow low-dimensional structures for research applications. MBE has given many contributions to the rapid expanding research-area of nano-technology and will probably continuing doing so. The MBE equipment, dedicated for Silicon/Germanium (Si/Ge) systems, at Karlstads University (Kau) has been studied and started for the first time. In the work of starting the system, all the built in interlocks has been surveyed and connected, and t...

  19. Tensile strain mapping in flat germanium membranes

    Energy Technology Data Exchange (ETDEWEB)

    Rhead, S. D., E-mail: S.Rhead@warwick.ac.uk; Halpin, J. E.; Myronov, M.; Patchett, D. H.; Allred, P. S.; Wilson, N. R.; Leadley, D. R. [Department of Physics, University of Warwick, Coventry, CV4 7AL (United Kingdom); Shah, V. A. [Department of Physics, University of Warwick, Coventry, CV4 7AL (United Kingdom); Department of Engineering, University of Warwick, Coventry, CV4 7AL (United Kingdom); Kachkanov, V.; Dolbnya, I. P. [Diamond Light Source, Harwell Science and Innovation Campus, Didcot, Oxfordshire, OX11 0DE (United Kingdom); Reparaz, J. S. [ICN2 - Institut Catala de Nanociencia i Nanotecnologia, Campus UAB, 08193 Bellaterra (Barcelona) (Spain); Sotomayor Torres, C. M. [ICN2 - Institut Catala de Nanociencia i Nanotecnologia, Campus UAB, 08193 Bellaterra (Barcelona) (Spain)

    2014-04-28

    Scanning X-ray micro-diffraction has been used as a non-destructive probe of the local crystalline quality of a thin suspended germanium (Ge) membrane. A series of reciprocal space maps were obtained with ∼4 μm spatial resolution, from which detailed information on the strain distribution, thickness, and crystalline tilt of the membrane was obtained. We are able to detect a systematic strain variation across the membranes, but show that this is negligible in the context of using the membranes as platforms for further growth. In addition, we show evidence that the interface and surface quality is improved by suspending the Ge.

  20. Radiation piezoelectric effect in germanium single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Kikoin, I.K.; Kikoin, L.I.; Lazarev, S.D.

    1977-06-01

    Irradiation with ionizing particles of a germanium single crystal and uniaxial deformation at right-angles to the particle beam produced an electric field and a corresponding emf due to the radiation piezoelectric effect. Measurements were carried out when such a single crystal was irradiated with ..cap alpha.. particles and protons. The piezoelectric emf increased linearly with the compressive stress and the ..cap alpha..-particle flux intensity. The emf depended weakly on the particle energy. The observed effect was due to the anisotropy resulting from uniaxial deformation.

  1. Silicon germanium mask for deep silicon etching

    KAUST Repository

    Serry, Mohamed

    2014-07-29

    Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

  2. Effects of Germanium on Movement of Dislocations in p-Type Czochralski Silicon

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    By indentation at room temperature followed by annealing at high temperatures, the pinning effect of germanium on dislocations in germanium-doped Czochralski silicon was investigated. Experimental results show that the dislocations in germanium-doped Czochralski silicon move shorter and slower than those in Czochralski silicon undoping with germanium when the concentration of germanium is over 1×1018 cm-3. The retarding velocity of dislocations is contributed to the dislocations pinning effect of the strain field introduced by the high concentration germanium, and the Ge4B cluster and the oxygen precipitation those are preferred to form at higher concentration germanium.

  3. Cryogenic readout techniques for germanium detectors

    Energy Technology Data Exchange (ETDEWEB)

    Benato, G. [University of Zurich, (Switzerland); Cattadori, C. [INFN - Milano Bicocca, (Italy); Di Vacri, A. [INFN LNGS, (Italy); Ferri, E. [Universita Milano Bicocca/INFN Milano Bicocca, (Italy); D' Andrea, V.; Macolino, C. [GSSI/INFN LNGS, (Italy); Riboldi, S. [Universita degli Studi di Milano/INFN Milano, (Italy); Salamida, F. [Universita Milano Bicocca/INFN Milano Bicocca, (Italy)

    2015-07-01

    High Purity Germanium detectors are used in many applications, from nuclear and astro-particle physics, to homeland security or environment protection. Although quite standard configurations are often used, with cryostats, charge sensitive amplifiers and analog or digital acquisition systems all commercially available, it might be the case that a few specific applications, e.g. satellites, portable devices, cryogenic physics experiments, etc. also require the development of a few additional or complementary techniques. An interesting case is for sure GERDA, the Germanium Detector Array experiment, searching for neutrino-less double beta decay of {sup 76}Ge at the Gran Sasso National Laboratory of INFN - Italy. In GERDA the entire detector array, composed of semi-coaxial and BEGe naked crystals, is operated suspended inside a cryostat filled with liquid argon, that acts not only as cooling medium and but also as an active shield, thanks to its scintillation properties. These peculiar circumstances, together with the additional requirement of a very low radioactive background from all the materials adjacent to the detectors, clearly introduce significant constraints on the design of the Ge front-end readout electronics. All the Ge readout solutions developed within the framework of the GERDA collaboration, for both Phase I and Phase II, will be briefly reviewed, with their relative strength and weakness compared together and with respect to ideal Ge readout. Finally, the digital processing techniques developed by the GERDA collaboration for energy estimation of Ge detector signals will be recalled. (authors)

  4. Coaxial foilless diode

    OpenAIRE

    Long Kong; QingXiang Liu; XiangQiang Li; ShaoMeng Wang

    2014-01-01

    A kind of coaxial foilless diode is proposed in this paper, with the structure model and operating principle of the diode are given. The current-voltage relation of the coaxial foilless diode and the effects of structure parameters on the relation are studied by simulation. By solving the electron motion equation, the beam deviation characteristic in the presence of external magnetic field in transmission process is analyzed, and the relationship between transverse misalignment with diode par...

  5. Coaxial foilless diode

    OpenAIRE

    Long Kong; QingXiang Liu; XiangQiang Li; ShaoMeng Wang

    2014-01-01

    A kind of coaxial foilless diode is proposed in this paper, with the structure model and operating principle of the diode are given. The current-voltage relation of the coaxial foilless diode and the effects of structure parameters on the relation are studied by simulation. By solving the electron motion equation, the beam deviation characteristic in the presence of external magnetic field in transmission process is analyzed, and the relationship between transverse misalignment with diode par...

  6. Header For Laser Diode

    Science.gov (United States)

    Rall, Jonathan A. R.; Spadin, Paul L.

    1990-01-01

    Header designed to contain laser diode. Output combined incoherently with outputs of other laser diodes in grating laser-beam combiner in optical communication system. Provides electrical connections to laser diode, cooling to thermally stabilize laser operation, and optomechanical adjustments that steer and focus laser beam. Range of adjustments provides for correction of worst-case decentering and defocusing of laser beam encountered with laser diodes. Mechanical configuration made simple to promote stability and keep cost low.

  7. Research on reverse recovery characteristics of SiGeC p-i-n diodes

    Institute of Scientific and Technical Information of China (English)

    Gao Yong; Liu Jing; Yang Yuan

    2008-01-01

    This paper analyses the reverse recovery characteristics and mechanism of SiGeC p-i-n diodes. Based on the integrated systems engineering (ISE) data, the critical physical models of SiGeC diodes are proposed. Based on heterojunction band gap engineering, the softness factor increases over six times, reverse recovery time is over 30% short and there is a 20% decrease in peak reverse recovery current for SiGeC diodes with 20% of germanium and 0.5% of carbon,compared to Si diodes. Those advantages of SiGeC p-i-n diodes are more obvious at high temperature. Compared to lifetime control, SiGeC technique is more suitable for improving diode properties and the tradeoff between reverse recovery time and forward voltage drop can be easily achieved in SiGeC diodes. Furthermore, the high thermal-stability of SiGeC diodes reduces the costs of further process steps and offers more freedoms to device design.

  8. Oxygen defect processes in silicon and silicon germanium

    KAUST Repository

    Chroneos, A.

    2015-06-18

    Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

  9. The Genesis of Lincang Germanium Deposit—A Preliminary Investigation

    Institute of Scientific and Technical Information of China (English)

    胡瑞忠; 叶造军; 等

    1996-01-01

    The mechanism of formation of the Lincang germanium deposit is discussed in the light of the spatial distribution of Ge-rich coal and siliceous rocks,the sulfur isotopic composition of pyrite in the Ge-rich coal,the variation of Ge abundance in the coal seams and the geochemical characteristics of the siliceous rocks.The results show that the siliceous rocks intercalated with the coal seamw were deposited from a hyrothermal medium through which germanium was enriched in the coal beds.The primary source of germanium is thought to be the Gerich granite in the basement of the sedimentary basin.

  10. Temperature-dependant study of phosphorus ion implantation in germanium

    Science.gov (United States)

    Razali, M. A.; Smith, A. J.; Jeynes, C.; Gwilliam, R. M.

    2012-11-01

    We present experimental results on shallow junction formation in germanium by phosphorus ion implantation and standard rapid thermal processing. An attempt is made to improve phosphorus activation by implanting phosphorus at high and low temperature. The focus is on studying the germanium damage and phosphorus activation as a function of implant temperature. Rutherford backscattering spectrometry with channelling and Hall Effect measurements are employed for characterisation of germanium damage and phosphorus activation, respectively. High and low temperature implants were found to be better compared to room temperature implant.

  11. Oxygen defect processes in silicon and silicon germanium

    Energy Technology Data Exchange (ETDEWEB)

    Chroneos, A., E-mail: alexander.chroneos@imperial.ac.uk [Faculty of Engineering and Computing, Coventry University, Priory Street, Coventry CV1 5FB (United Kingdom); Department of Materials, Imperial College London, London SW7 2BP (United Kingdom); Sgourou, E. N.; Londos, C. A. [Solid State Section, Physics Department, University of Athens, Panepistimiopolis, Zografos, 157 84 Athens (Greece); Schwingenschlögl, U. [PSE Division, KAUST, Thuwal 23955-6900 (Saudi Arabia)

    2015-06-15

    Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

  12. Heteroepitaxial growth of relaxed germanium on silicon

    Science.gov (United States)

    Nayfeh, Ammar

    Germanium has a many advantages to silicon as a semiconductor material. Most importantly, Ge has a larger lattice mobility (hole and electron) compared to Si. The larger mobility provides a higher source injection velocity, which translates into higher drive current and smaller gate delay. In addition, the near-infrared photodetection and compatibility with Si technology of Ge-based materials, allow simultaneous fabrication of photodetectors and Si CMOS receiver circuits in a monolithically integrated fashion. The main disadvantage is that germanium based oxides are not stable and but rather soluble in water. But the inevitable shift to high-kappa/metal gate has made Ge a serious option nevertheless. In order for the semiconductor industry to take advantage of the properties of Ge, heterogeneous integration of Ge and Si must be possible since using bulk Ge is not viable. However, Ge growth on Si is hampered by the large lattice mismatch (4%) between Ge and Si which results in growth that is dominated by "islanding" and misfit dislocations. The following thesis, investigates both the islanding and dislocation density issues associated with this problem. A 90% reduction of surface roughness by hydrogen annealing is demonstrated accompanied with a theoretical model to explain these results. Using multi-steps of growth and hydrogen annealing, Ge layers on Si were achieved with dislocation density as low as 1x107cm-2 and Rrms surface roughness of 2.5nm. The method was patented and named, Multiple Hydrogen Annealing for Heteroexpitaxy (MHAH). A complete experimentally based theoretical model is provided that explains these results. In addition, MOSCAPS, a pMOS transistor, and a MSM photodetector are fabricated on the MHAH-Ge substrates. Also high-kappa/metal gate compatibility is demonstrated on MHAH-Ge. The electrical results indicate that MHAH-Ge approaches the electrical quality of bulk Ge. These results point to a promising step in achieving heterogeneous integration

  13. Germanium 70: a gamma ray detector for astrophysics; Le germanium 70: un detecteur de rayons gamma en astrophysique

    Energy Technology Data Exchange (ETDEWEB)

    Durouchoux, P. [CEA Centre d`Etudes de Saclay, 91 - Gif-sur-Yvette (France). Dept. d`Astrophysique, de la Physique des Particules, de la Physique Nucleaire et de l`Instrumentation Associee

    1994-12-31

    A thorough study concerning the background noise generated from the germanium detectors used in astrophysics spatial experiences, is presented. These detectors, selected for their energy high definition, are sensitive to cosmic radiations that activate some isotopes contained in the natural germanium and induce background noise through a beta+ decay. This noise component may be notably reduced with utilization of {sup 70}Ge isotope enriched detectors, which do not present such interactions. The predictions have been verified through space tests conducted from Australia in 1992. Preliminary results and prospectives for astrophysics application of the Germanium 70 isotope, are discussed. 6 figs., 2 tabs., 3 refs.

  14. Lighting with laser diodes

    Science.gov (United States)

    Basu, Chandrajit; Meinhardt-Wollweber, Merve; Roth, Bernhard

    2013-08-01

    Contemporary white light-emitting diodes (LEDs) are much more efficient than compact fluorescent lamps and hence are rapidly capturing the market for general illumination. LEDs are also replacing halogen lamps or even newer xenon based lamps in automotive headlamps. Because laser diodes are inherently much brighter and often more efficient than corresponding LEDs, there is great research interest in developing laser diode based illumination systems. Operating at higher current densities and with smaller form factors, laser diodes may outperform LEDs in the future. This article reviews the possibilities and challenges in the integration of visible laser diodes in future illumination systems.

  15. Laser Diode Ignition (LDI)

    Science.gov (United States)

    Kass, William J.; Andrews, Larry A.; Boney, Craig M.; Chow, Weng W.; Clements, James W.; Merson, John A.; Salas, F. Jim; Williams, Randy J.; Hinkle, Lane R.

    1994-01-01

    This paper reviews the status of the Laser Diode Ignition (LDI) program at Sandia National Labs. One watt laser diodes have been characterized for use with a single explosive actuator. Extensive measurements of the effect of electrostatic discharge (ESD) pulses on the laser diode optical output have been made. Characterization of optical fiber and connectors over temperature has been done. Multiple laser diodes have been packaged to ignite multiple explosive devices and an eight element laser diode array has been recently tested by igniting eight explosive devices at predetermined 100 ms intervals.

  16. Positron annihilation in neutron-irradiated germanium

    Energy Technology Data Exchange (ETDEWEB)

    Bartenev, G.M.; Bardyshev, I.I.; Erchak, D.P.; Stel' makh, V.F.; Tsyganov, A.D.

    1979-04-01

    The annealing of radiation defects in a germanium single crystal irradiated with 10/sup 18/ neutrons/cm/sup 2/ was studied by positron annihilation, ESR, and resistivity measurements. It was found that positrons are trapped by radiation defects. The intensity of the narrow component of the angular correlation of the annihilation radiation yielded the concentration of defect clusters in the irradiated sample n/sub d/approx. =3 x 10/sup 14/ cm/sup -3/. Three characteristic annealing stages were identified. At 160--200 /sup 0/C, point defects were annealed within the crystal. At 200--320 /sup 0/C, there was ''loosening'' of the clusters, and the charge state of the defects changed. At 320--550 /sup 0/C, the clusters were annealed.

  17. Germanium detectors and natural radioactivity in food

    Energy Technology Data Exchange (ETDEWEB)

    Garbini, Lucia [Max-Planck-Institut fuer Physik, Muenchen (Germany); Collaboration: GeDet-Collaboration

    2013-07-01

    Potassium is a very important mineral for many physiological processes, like fluid balance, protein synthesis and signal transmission in nerves. Many aliments like raisins, bananas or chocolate contain potassium. Natural potassium contains 0.012% of the radioactive isotope Potassium 40. This isotope decays via β{sup +} decay into a metastable state of Argon 40, which reaches its ground state emitting a gamma of 1460 keV. A commercially produced Germanium detector has been used to measure the energy spectra of different selected food samples. It was calibrated with KCl and potassium contents were extracted. Results verify the high potassium content of commonly recommended food samples. However, the measurement quantitatively differ from the expectations in several cases. One of the most interesting results concerns chocolate bars with different percentages of cacao.

  18. Raman spectroscopy of hydrogen molecules in germanium

    Energy Technology Data Exchange (ETDEWEB)

    Hiller, M. [Technische Universitaet Dresden, 01062 Dresden (Germany)]. E-mail: martin.hiller@physik.phy.tu-dresden.de; Lavrov, E.V. [Technische Universitaet Dresden, 01062 Dresden (Germany); Weber, J. [Technische Universitaet Dresden, 01062 Dresden (Germany)

    2006-04-01

    Single-crystalline germanium samples exposed to hydrogen and/or deuterium plasma are studied by Raman scattering. Two bands at 1980 and 4155cm{sup -1} are assigned to local vibrational modes of Ge-H and H{sub 2}, respectively. Polarization sensitive Raman scattering spectra suggest that the plasma treatment results in {l_brace}111{r_brace} platelets whose basic units are Ge-H bonds. The signal at 4155cm{sup -1} is shown to result from molecular hydrogen trapped within these platelets. Another broad Raman signal around 3930cm{sup -1} seems to be due to H{sub 2} trapped in some other type of voids formed during the plasma treatment. Two sharp peaks at 3826 and 3834cm{sup -1} are assigned to ortho- and para-H{sub 2} trapped at the interstitial T site.

  19. Synthesis of silicon and germanium nanowires.

    Energy Technology Data Exchange (ETDEWEB)

    Clement, Teresa J. (Arizona State University); Hsu, Julia W. P.

    2007-11-01

    The vapor-liquid-solid growth process for synthesis of group-IV semiconducting nanowires using silane, germane, disilane and digermane precursor gases has been investigated. The nanowire growth process combines in situ gold seed formation by vapor deposition on atomically clean silicon (111) surfaces, in situ growth from the gaseous precursor(s), and real-time monitoring of nanowire growth as a function of temperature and pressure by a novel optical reflectometry technique. A significant dependence on precursor pressure and growth temperature for the synthesis of silicon and germanium nanowires is observed, depending on the stability of the specific precursor used. Also, the presence of a nucleation time for the onset of nanowire growth has been found using our new in situ optical reflectometry technique.

  20. Lattice site and thermal stability of transition metals in germanium

    CERN Document Server

    Augustyns, Valérie; Pereira, Lino

    Although the first transistor was based on germanium, current chip technology mainly uses silicon due to its larger abundance, a lower price and higher quality silicon-oxide. However, a very important goal in microelectronics is to obtain faster integrated circuits. The advantages of germanium compared to silicon (e.g. a higher mobility of the charge carriers) motivates further research on germanium based materials. Semiconductor doping (e.g. introducing impurities into silicon and germanium in order to alter - and control - their properties) can be done by ion implantation or by in situ doping, whereby the host material is doped during growth. This thesis focuses on introducing dopants by ion implantation. The implantation as well as the subsequent measurements were performed in ISOLDE (CERN) using the emission channeling technique. Although ion implantation generates undesired defects in the host material (e.g. vacancies), such damage can be reduced by performing the implantation at an elevated temperature....

  1. Focusing of a new germanium counter type : the composite detector. Uses of the TREFLE detector in the EUROGAM multidetector; Mise au point d`un nouveau type de compteur germanium: le detecteur composite. Utilisation du detecteur TREFLE dans le multidetecteur EUROGAM

    Energy Technology Data Exchange (ETDEWEB)

    Han, L.

    1995-05-01

    The aim of this thesis is the development of new types of germanium detectors: the composite detectors. Two types of prototypes are then conceived: the stacked planar detector (EDP) and the assembly of coaxial diodes (TREFLE). They are designed for the multidetector EUROGAM destined to the research of nuclear structure at high angular momentum. The four planar diodes of EDP detector were of 7 cm diameter and of 15 to 20 mm thick. The difference between the calculated and measured photopic efficiency is observed. The importance of surface channel induces a weak resistance of neutron damages. The sputtering method for the surface treatment reducing the germanium dead layer as well as a rule of selection concerning the impurity concentration and the thickness of crystal is helpful for the later production of germanium detector. The CLOVER detector consist of for mean size crystals in the same cryostat. The photopic efficiency is much larger than that of the greatest monocrystal detector. And the granulation of composite detector allowed the Doppler broadening correction of gamma ray observed in the nuclear reaction where the recoil velocity is very high. This new type of detector enable the linear polarization measurement of gamma ray. Twenty-four CLOVER detector are actually mounted in the EUROGAM array. The characteristics measured in source as well as in beam, reported in this thesis, meet exactly the charge account. (author). 47 refs., 61 figs., 18 tabs.

  2. Solid solubility of germanium in silver

    Energy Technology Data Exchange (ETDEWEB)

    Kazemi, Hamed [Laboratory of Mechanical Metallurgy, Ecole Polytechnique Federale de Lausanne, EPFL, CH-1015 Lausanne (Switzerland); Weber, Ludger, E-mail: ludger.weber@epfl.ch [Laboratory of Mechanical Metallurgy, Ecole Polytechnique Federale de Lausanne, EPFL, CH-1015 Lausanne (Switzerland)

    2012-09-20

    Highlights: Black-Right-Pointing-Pointer The solvus line in the binary Ag-Ge system has been assessed based on measurements of electrical resistivity and specific gravity. Black-Right-Pointing-Pointer The two measurement techniques yield close agreement. Black-Right-Pointing-Pointer The data found in this contribution indicate lower solid solubility than in previous assessments. Black-Right-Pointing-Pointer Redlich-Kister parameters have been evaluated to describe the solvus line. - Abstract: The solid solubility of germanium in silver has been measured in the temperature range of 520 K to 913 K via measurements of density and of electrical conductivity of two near-eutectic Ag-Ge alloys. The atomic fraction of germanium in solid solution varied between 0.014 and 0.089 over the mentioned range of temperature and an extrapolated maximum solubility of 0.093 at the eutectic temperature of 924 K is found. For samples with spheroidized Ge-particles before the equilibrium heat treatments at low temperature for 24 or 48 h, thermodynamic equilibrium was supposedly not achieved at temperatures below 723 K. Much longer heat treatments (tens of days) on the significantly finer as-cast microstructure allowed to reach equilibrium probably down to 600 K. Independently of whether thermodynamic equilibrium was reached or not the electrical conductivity and the density measurements yielded good agreement typically within a few tenth of percent of atomic Ge-concentration in solid solution in {alpha}-Ag for a given temperature. The results are close to, yet consistently slightly lower than, the values given by Owen and Rowland on which the current assessment of the solvus in the Ag-Ge binary is based. More recent results by Filipponi and co-workers are clearly not in agreement with the data presented here.

  3. Electromechanically cooled germanium radiation detector system

    Science.gov (United States)

    Lavietes, Anthony D.; Joseph Mauger, G.; Anderson, Eric H.

    1999-02-01

    We have successfully developed and fielded an electromechanically cooled germanium radiation detector (EMC-HPGe) at Lawrence Livermore National Laboratory (LLNL). This detector system was designed to provide optimum energy resolution, long lifetime, and extremely reliable operation for unattended and portable applications. For most analytical applications, high purity germanium (HPGe) detectors are the standard detectors of choice, providing an unsurpassed combination of high energy resolution performance and exceptional detection efficiency. Logistical difficulties associated with providing the required liquid nitrogen (LN) for cooling is the primary reason that these systems are found mainly in laboratories. The EMC-HPGe detector system described in this paper successfully provides HPGe detector performance in a portable instrument that allows for isotopic analysis in the field. It incorporates a unique active vibration control system that allows the use of a Sunpower Stirling cycle cryocooler unit without significant spectral degradation from microphonics. All standard isotopic analysis codes, including MGA and MGA++ [1], GAMANL [2], GRPANL [3]and MGAU [4], typically used with HPGe detectors can be used with this system with excellent results. Several national and international Safeguards organisations including the International Atomic Energy Agency (IAEA) and U.S. Department of Energy (DOE) have expressed interest in this system. The detector was combined with custom software and demonstrated as a rapid Field Radiometric Identification System (FRIS) for the U.S. Customs Service [5]. The European Communities' Safeguards Directorate (EURATOM) is field-testing the first Safeguards prototype in their applications. The EMC-HPGe detector system design, recent applications, and results will be highlighted.

  4. Promoting cell proliferation using water dispersible germanium nanowires.

    Directory of Open Access Journals (Sweden)

    Michael Bezuidenhout

    Full Text Available Group IV Nanowires have strong potential for several biomedical applications. However, to date their use remains limited because many are synthesised using heavy metal seeds and functionalised using organic ligands to make the materials water dispersible. This can result in unpredicted toxic side effects for mammalian cells cultured on the wires. Here, we describe an approach to make seedless and ligand free Germanium nanowires water dispersible using glutamic acid, a natural occurring amino acid that alleviates the environmental and health hazards associated with traditional functionalisation materials. We analysed the treated material extensively using Transmission electron microscopy (TEM, High resolution-TEM, and scanning electron microscope (SEM. Using a series of state of the art biochemical and morphological assays, together with a series of complimentary and synergistic cellular and molecular approaches, we show that the water dispersible germanium nanowires are non-toxic and are biocompatible. We monitored the behaviour of the cells growing on the treated germanium nanowires using a real time impedance based platform (xCELLigence which revealed that the treated germanium nanowires promote cell adhesion and cell proliferation which we believe is as a result of the presence of an etched surface giving rise to a collagen like structure and an oxide layer. Furthermore this study is the first to evaluate the associated effect of Germanium nanowires on mammalian cells. Our studies highlight the potential use of water dispersible Germanium Nanowires in biological platforms that encourage anchorage-dependent cell growth.

  5. Protective infrared antireflection coating based on sputtered germanium carbide

    Science.gov (United States)

    Gibson, Des; Waddell, Ewan; Placido, Frank

    2011-09-01

    This paper describes optical, durablility and environmental performance of a germanium carbide based durable antireflection coating. The coating has been demonstrated on germanium and zinc selenide infra-red material however is applicable to other materials such as zinc sulphide. The material is deposited using a novel reactive closed field magnetron sputtering technique, offering significant advantages over conventional evaporation processes for germanium carbide such as plasma enhanced chemical vapour deposition. The sputtering process is "cold", making it suitable for use on a wide range of substrates. Moreover, the drum format provide more efficient loading for high throughput production. The use of the closed field and unbalanced magnetrons creates a magnetic confinement that extends the electron mean free path leading to high ion current densities. The combination of high current densities with ion energies in the range ~30eV creates optimum thin film growth conditions. As a result the films are dense, spectrally stable, supersmooth and low stress. Films incorporate low hydrogen content resulting in minimal C-H absorption bands within critical infra-red passbands such as 3 to 5um and 8 to 12um. Tuning of germanium carbide (Ge(1-x)Cx) film refractive index from pure germanium (refractive index 4) to pure germanium carbide (refractive index 1.8) will be demonstrated. Use of film grading to achieve single and dual band anti-reflection performance will be shown. Environmental and durability levels are shown to be suitable for use in harsh external environments.

  6. Optical gain in single tensile-strained germanium photonic wire.

    Science.gov (United States)

    de Kersauson, M; El Kurdi, M; David, S; Checoury, X; Fishman, G; Sauvage, S; Jakomin, R; Beaudoin, G; Sagnes, I; Boucaud, P

    2011-09-12

    We have investigated the optical properties of tensile-strained germanium photonic wires. The photonic wires patterned by electron beam lithography (50 μm long, 1 μm wide and 500 nm thick) are obtained by growing a n-doped germanium film on a GaAs substrate. Tensile strain is transferred in the germanium layer using a Si₃N₄ stressor. Tensile strain around 0.4% achieved by the technique corresponds to an optical recombination of tensile-strained germanium involving light hole band around 1690 nm at room temperature. We show that the waveguided emission associated with a single tensile-strained germanium wire increases superlinearly as a function of the illuminated length. A 20% decrease of the spectral broadening is observed as the pump intensity is increased. All these features are signatures of optical gain. A 80 cm⁻¹ modal optical gain is derived from the variable strip length method. This value is accounted for by the calculated gain material value using a 30 band k · p formalism. These germanium wires represent potential building blocks for integration of nanoscale optical sources on silicon.

  7. Terahertz Diode Development

    Science.gov (United States)

    2009-03-23

    Gunn Diode , Negative Differential Resistance, Ballistic Transport, GaN, THz, Co-planar Resonator 16. SECURITY CLASSIFICATION OF: REPORT U b...Report DATES COVERED (From - Jo) 1 January 2004- 31 December 2008 4. TITLE AND SUBTITLE Terahertz Diode Development 5a. CONTRACT NUMBER N00014...current-voltage oscillations at the terminals of the diode at a frequency which is, to first order, determined by the average transit time of the EAL

  8. Germanium separation and purification by leaching and precipitation

    Institute of Scientific and Technical Information of China (English)

    Saeid Bayat; Sajjad Aghazadeh; Mohammad Noaparast; Mahdi Gharabaghi; Behrooz Taheri

    2016-01-01

    In this research work, extraction and purification of germanium from zinc leach residues (ZLR) were investigated. The results of ICP, XRF, and atomic adsorption spectroscopy (AAS) tests show that contents of germanium, iron, lead, and zinc within the leaching residue were 105×10−6, 3.53%, 10.35%, and 8.8%, respectively. XRD results indicate that the main minerals were in different forms of sulfates (CaSO4·2H2O, PbSO4 and ZnSO4·6H2O), silicate (SiO2), and oxide (Fe2O3). Dissolution of leaching filter cake was carried out using 5 parameters and each in 4 levels (acid concentration, temperature, time, liquid-to-solid ratio, and stirring speed) by Taguchi method (L16), and then optimization of the effective parameters by response surface method. Under optimum conditions, zinc and germanium dissolution efficiencies were 88.71% and 8%, respectively. Leaching tests with sulfuric acid (added di-ammonium oxalate monohydrate) and hydrochloric acid (HCl) on the residues obtained from previous-stage sulfuric acid dissolution, yielded germanium and iron recoveries of 83%, 88%, 40%, and 90%, respectively. Thus, leaching experiment with sulfuric acid (added di-ammonium oxalate monohydrate) was superior to that with hydrochloric acid due to high and low extraction amounts of germanium and iron, respectively. Precipitation experiments revealed that germanium purification with tannic acid presented a better result compared to sodium hydroxide and ammonia. Under optimum conditions, contents of germanium and iron in the solution after precipitation were 0.1505% and 14.7% with precipitation yields of 91% and 52%, respectively.

  9. Coaxial foilless diode

    Directory of Open Access Journals (Sweden)

    Long Kong

    2014-05-01

    Full Text Available A kind of coaxial foilless diode is proposed in this paper, with the structure model and operating principle of the diode are given. The current-voltage relation of the coaxial foilless diode and the effects of structure parameters on the relation are studied by simulation. By solving the electron motion equation, the beam deviation characteristic in the presence of external magnetic field in transmission process is analyzed, and the relationship between transverse misalignment with diode parameters is obtained. These results should be of interest to the area of generation and propagation of radial beam for application of generating high power microwaves.

  10. A Low Noise 64x64 Germanium Array for Far IR Astronomy Project

    Data.gov (United States)

    National Aeronautics and Space Administration — We propose to develope a 64x64 far infrared germanium focal-plane array with the following key design features: 1- Four top-illuminated, 32x32 germanium sub-arrays...

  11. Anisotropic Optical Properties of Layered Germanium Sulfide

    CERN Document Server

    Tan, Dezhi; Wang, Feijiu; Mohamed, Nur Baizura; Mouri, Shinichiro; Sandhaya, Koirala; Zhang, Wenjing; Miyauchi, Yuhei; Ohfuchi, Mari; Matsuda, Kazunari

    2016-01-01

    Two-dimensional (2D) layered materials, transition metal dichalcogenides and black phosphorus, have attracted much interest from the viewpoints of fundamental physics and device applications. The establishment of new functionalities in anisotropic layered 2D materials is a challenging but rewarding frontier, owing to their remarkable optical properties and prospects for new devices. Here, we report the anisotropic optical properties of layered 2D monochalcogenide of germanium sulfide (GeS). Three Raman scattering peaks corresponding to the B3g, A1g, and A2g modes with strong polarization dependence are demonstrated in the GeS flakes, which validates polarized Raman spectroscopy as an effective method for identifying the crystal orientation of anisotropic layered GeS. Photoluminescence (PL) is observed with a peak at around 1.66 eV that originates from the direct optical transition in GeS at room temperature. Moreover, determination of the polarization dependent characteristics of the PL and absorption reveals...

  12. Hydrogen Bonding in Hydrogenated Amorphous Germanium

    Institute of Scientific and Technical Information of China (English)

    M.S.Abo-Ghazala; S. Al Hazmy

    2004-01-01

    Thin films of hydrogenated amorphous germanium (a-Ge:H) were prepared by radio frequency glow discharge deposition at various substrate temperatures. The hydrogen distribution and bonding structure in a-Ge:H were discussed based on infrared absorption data. The correlation between infrared absorption spectra and hydrogen effusion measurements was used to determine the proportionality constant for each vibration mode of the Ge-H bonds. The results reveal that the bending mode appearing at 835 cm?1 is associated with the Ge-H2 (dihydride) groups on the internal surfaces of voids. While 1880 cm?1 is assigned to vibrations of Ge-H (monohydride) groups in the bulk, the 2000 cm?1 stretching mode is attributed to Ge-H and Ge-H2 bonds located on the surfaces of voids. For films associated with bending modes in the infrared spectra, the proportionality constant values of the stretching modes near 1880 and 2000 cm?1 are found to be lower than those of films which had no corresponding bending modes.

  13. Performance and stability tests of bare high purity germanium detectors in liquid argon for the GERDA experiment

    Energy Technology Data Exchange (ETDEWEB)

    Barnabe Heider, Marik

    2009-05-27

    GERDA will search for neutrinoless double beta decay of {sup 76}Ge by using a novel approach of bare germanium detectors in liquid argon (LAr). Enriched germanium detectors from the previous Heidelberg-Moscow and IGEX experiments have been reprocessed and will be deployed in GERDA Phase-I. At the center of this thesis project is the study of the performance of bare germanium detectors in cryogenic liquids. Identical detector performance as in vacuum cryostats (2.2 keV FWHM at 1.3 MeV) was achieved in cryogenic liquids with a new low-mass detector assembly and contacts. One major result is the discovery of a radiation induced leakage current (LC) increase when operating bare detectors with standard passivation layers in LAr. Charge collection and build-up on the passivation layer were identified as the origin of the LC increase. It was found that diodes without passivation do not exhibit this feature. Three month-long stable operation in LAr at {proportional_to} 5 pA LC under periodic gamma irradiation demonstrated the suitability of the modi ed detector design. Based on these results, all Phase-I detectors were reprocessed without passivation layer and subsequently successfully characterized in LAr in the GERDA underground Detector Laboratory. The mass loss during the reprocessing was {proportional_to}300 g out of 17.9 kg and the exposure above ground {proportional_to} 5 days. This results in a negligible cosmogenic background increase of {proportional_to} 5.10{sup -4} cts/(keV.kg.y) at {sup 76}Ge Q{sub {beta}}{sub {beta}} for {sup 60}Co and {sup 68}Ge. (orig.)

  14. Reaction studies of hot silicon, germanium and carbon atoms

    Energy Technology Data Exchange (ETDEWEB)

    Gaspar, P.P.

    1990-11-01

    The goal of this project was to increase the authors understanding of the interplay between the kinetic and electronic energy of free atoms and their chemical reactivity by answering the following questions: (1) what is the chemistry of high-energy carbon silicon and germanium atoms recoiling from nuclear transformations; (2) how do the reactions of recoiling carbon, silicon and germanium atoms take place - what are the operative reaction mechanisms; (3) how does the reactivity of free carbon, silicon and germanium atoms vary with energy and electronic state, and what are the differences in the chemistry of these three isoelectronic atoms This research program consisted of a coordinated set of experiments capable of achieving these goals by defining the structures, the kinetic and internal energy, and the charge states of the intermediates formed in the gas-phase reactions of recoiling silicon and germanium atoms with silane, germane, and unsaturated organic molecules, and of recoiling carbon atoms with aromatic molecules. The reactions of high energy silicon, germanium, and carbon atoms created by nuclear recoil were studied with substrates chosen so that their products illuminated the mechanism of the recoil reactions. Information about the energy and electronic state of the recoiling atoms at reaction was obtained from the variation in end product yields and the extent of decomposition and rearrangement of primary products (usually reactive intermediates) as a function of total pressure and the concentration of inert moderator molecules that remove kinetic energy from the recoiling atoms and can induce transitions between electronic spin states. 29 refs.

  15. Germanium, Arsenic, and Selenium Abundances in Metal-Poor Stars

    CERN Document Server

    Roederer, Ian U

    2012-01-01

    The elements germanium (Ge, Z=32), arsenic (As, Z=33), and selenium (Se, Z=34) span the transition from charged-particle or explosive synthesis of the iron-group elements to neutron-capture synthesis of heavier elements. Among these three elements, only the chemical evolution of germanium has been studied previously. Here we use archive observations made with the Space Telescope Imaging Spectrograph on board the Hubble Space Telescope and observations from several ground-based facilities to study the chemical enrichment histories of seven stars with metallicities -2.6 < [Fe/H] < -0.4. We perform a standard abundance analysis of germanium, arsenic, selenium, and several other elements produced by neutron-capture reactions. When combined with previous derivations of germanium abundances in metal-poor stars, our sample reveals an increase in the [Ge/Fe] ratios at higher metallicities. This could mark the onset of the weak s-process contribution to germanium. In contrast, the [As/Fe] and [Se/Fe] ratios rema...

  16. Modeling of dislocation dynamics in germanium Czochralski growth

    Science.gov (United States)

    Artemyev, V. V.; Smirnov, A. D.; Kalaev, V. V.; Mamedov, V. M.; Sidko, A. P.; Podkopaev, O. I.; Kravtsova, E. D.; Shimansky, A. F.

    2017-06-01

    Obtaining very high-purity germanium crystals with low dislocation density is a practically difficult problem, which requires knowledge and experience in growth processes. Dislocation density is one of the most important parameters defining the quality of germanium crystal. In this paper, we have performed experimental study of dislocation density during 4-in. germanium crystal growth using the Czochralski method and comprehensive unsteady modeling of the same crystal growth processes, taking into account global heat transfer, melt flow and melt/crystal interface shape evolution. Thermal stresses in the crystal and their relaxation with generation of dislocations within the Alexander-Haasen model have been calculated simultaneously with crystallization dynamics. Comparison to experimental data showed reasonable agreement for the temperature, interface shape and dislocation density in the crystal between calculation and experiment.

  17. Graphene-like monolayer low-buckled honeycomb germanium film

    Science.gov (United States)

    He, Yezeng; Luo, Haibo; Li, Hui; Sui, Yanwei; Wei, Fuxiang; Meng, Qingkun; Yang, Weiming; Qi, Jiqiu

    2017-04-01

    Molecular dynamics simulations have been performed to study the cooling process of two-dimensional liquid germanium under nanoslit confinement. The results clearly indicates that the liquid germanium undergoes an obvious liquid-solid phase transition to a monolayer honeycomb film with the decrease of temperature, accompanying the rapid change in potential energy, atomic volume, coordination number and lateral radial distribution function. During the solidification process, some hexagonal atomic islands first randomly emerge in the disordered liquid film and then grow up to stable crystal grains which keep growing and finally connect together to form a honeycomb polycrystalline film. It is worth noting that the honeycomb germanium film is low-buckled, quite different from the planar graphene.

  18. Next Generation Device Grade Silicon-Germanium on Insulator

    Science.gov (United States)

    Littlejohns, Callum G.; Nedeljkovic, Milos; Mallinson, Christopher F.; Watts, John F.; Mashanovich, Goran Z.; Reed, Graham T.; Gardes, Frederic Y.

    2015-02-01

    High quality single crystal silicon-germanium-on-insulator has the potential to facilitate the next generation of photonic and electronic devices. Using a rapid melt growth technique we engineer tailored single crystal silicon-germanium-on-insulator structures with near constant composition over large areas. The proposed structures avoid the problem of laterally graded SiGe compositions, caused by preferential Si rich solid formation, encountered in straight SiGe wires by providing radiating elements distributed along the structures. This method enables the fabrication of multiple single crystal silicon-germanium-on-insulator layers of different compositions, on the same Si wafer, using only a single deposition process and a single anneal process, simply by modifying the structural design and/or the anneal temperature. This facilitates a host of device designs, within a relatively simple growth environment, as compared to the complexities of other methods, and also offers flexibility in device designs within that growth environment.

  19. Characterisation of a Broad Energy Germanium (BEGe) detector

    Energy Technology Data Exchange (ETDEWEB)

    Barrientos, D., E-mail: diego_barrientos@usal.es [Laboratorio de Radiaciones Ionizantes, University of Salamanca (Spain); Boston, A.J.; Boston, H.C. [Nuclear Physics Group, University of Liverpool (United Kingdom); Quintana, B.; Sagrado, I.C. [Laboratorio de Radiaciones Ionizantes, University of Salamanca (Spain); Unsworth, C.; Moon, S.; Cresswell, J.R. [Nuclear Physics Group, University of Liverpool (United Kingdom)

    2011-08-21

    Characterisation of Germanium detectors used for gamma-ray tracking or medical imaging is one of the current goals in the Nuclear physics community. Good knowledge of detector response to different gamma radiations is needed for this purpose. In order to develop this task, Pulse Shape Analysis (PSA) techniques have been developed for different detector geometries or setups. In this work, we present the results of the application of PSA for a Canberra Broad Energy Germanium (BEGe) detector. This detector was scanned across its front and bottom face using a fully digital data acquisition system; allowing to record detector charge pulse shapes from well defined positions with collimated sources of {sup 241}Am, {sup 22}Na and {sup 137}Cs. With the study of the data acquired, characteristics of the inner detector geometry like crystal limits or positions of contact and isolate can be found, as well as the direction of the axes for the Germanium crystal.

  20. The GALATEA test-facility for High Purity Germanium Detectors

    CERN Document Server

    Abt, I; Doenmez, B; Garbini, L; Irlbeck, S; Majorovits, B; Palermo, M; Schulz, O; Seitz, H; Stelzer, F

    2014-01-01

    GALATEA is a test facility designed to investigate bulk and surface effects in high purity germanium detectors. A vacuum tank houses an infrared screened volume with a cooled detector inside. A system of three stages allows an almost complete scan of the detector. The main feature of GALATEA is that there is no material between source and detector. This allows the usage of alpha and beta sources as well as of a laser beam to study surface effects. A 19-fold segmented true-coaxial germanium detector was used for commissioning.

  1. The GALATEA test-facility for high purity germanium detectors

    Science.gov (United States)

    Abt, I.; Caldwell, A.; Dönmez, B.; Garbini, L.; Irlbeck, S.; Majorovits, B.; Palermo, M.; Schulz, O.; Seitz, H.; Stelzer, F.

    2015-05-01

    GALATEA is a test facility designed to investigate bulk and surface effects in high purity germanium detectors. A vacuum tank houses a cold volume with the detector inside. A system of three precision motorized stages allows an almost complete scan of the detector. The main feature of GALATEA is that there is no material between source and detector. This allows the usage of alpha and beta sources to study surface effects. A 19-fold segmented true-coaxial germanium detector was used for commissioning. A first analysis of data obtained with an alpha source is presented here.

  2. The GALATEA test-facility for high purity germanium detectors

    Energy Technology Data Exchange (ETDEWEB)

    Abt, I.; Caldwell, A.; Dönmez, B.; Garbini, L.; Irlbeck, S.; Majorovits, B.; Palermo, M., E-mail: palermo@mpp.mpg.de; Schulz, O.; Seitz, H.; Stelzer, F.

    2015-05-11

    GALATEA is a test facility designed to investigate bulk and surface effects in high purity germanium detectors. A vacuum tank houses a cold volume with the detector inside. A system of three precision motorized stages allows an almost complete scan of the detector. The main feature of GALATEA is that there is no material between source and detector. This allows the usage of alpha and beta sources to study surface effects. A 19-fold segmented true-coaxial germanium detector was used for commissioning. A first analysis of data obtained with an alpha source is presented here.

  3. Germanium, Arsenic, and Selenium Abundances in Metal-poor Stars

    Science.gov (United States)

    Roederer, Ian U.

    2012-09-01

    The elements germanium (Ge, Z = 32), arsenic (As, Z = 33), and selenium (Se, Z = 34) span the transition from charged-particle or explosive synthesis of the iron-group elements to neutron-capture synthesis of heavier elements. Among these three elements, only the chemical evolution of germanium has been studied previously. Here we use archive observations made with the Space Telescope Imaging Spectrograph on board the Hubble Space Telescope and observations from several ground-based facilities to study the chemical enrichment histories of seven stars with metallicities -2.6 Prochaska).This paper includes data taken at The McDonald Observatory of The University of Texas at Austin.

  4. Tensile-strained germanium microdisks with circular Bragg reflectors

    Science.gov (United States)

    El Kurdi, M.; Prost, M.; Ghrib, A.; Elbaz, A.; Sauvage, S.; Checoury, X.; Beaudoin, G.; Sagnes, I.; Picardi, G.; Ossikovski, R.; Boeuf, F.; Boucaud, P.

    2016-02-01

    We demonstrate the combination of germanium microdisks tensily strained by silicon nitride layers and circular Bragg reflectors. The microdisks with suspended lateral Bragg reflectors form a cavity with quality factors up to 2000 around 2 μm. This represents a key feature to achieve a microlaser with a quasi-direct band gap germanium under a 1.6% biaxial tensile strain. We show that lowering the temperature significantly improves the quality factor of the quasi-radial modes. Linewidth narrowing is observed in a range of weak continuous wave excitation powers. We finally discuss the requirements to achieve lasing with these kind of structures.

  5. Comparative infrared study of silicon and germanium nitrides

    Science.gov (United States)

    Baraton, M. I.; Marchand, R.; Quintard, P.

    1986-03-01

    Silicon and germanium nitride (Si 3N 4 and Ge 3N 4) are isomorphic compounds. They have been studied in the β-phase which crystallises in the hexagonal system. The space group is P6 3/m (C 6h2). The IR transmission spectra of these two nitrides are very similar but the absorption frequencies of germanium nitride are shifted to the lower values in comparison with silicon nitride. We noted that the atomic mass effect is the only cause of this shift for the streching modes but not for the bending modes.

  6. Characterisation of two AGATA asymmetric high purity germanium capsules

    Energy Technology Data Exchange (ETDEWEB)

    Colosimo, S.J., E-mail: sjc@ns.ph.liv.ac.uk [Department of Physics, Oliver Lodge Laboratory, University of Liverpool, Liverpool L69 7ZE (United Kingdom); Moon, S.; Boston, A.J.; Boston, H.C.; Cresswell, J.R.; Harkness-Brennan, L.; Judson, D.S. [Department of Physics, Oliver Lodge Laboratory, University of Liverpool, Liverpool L69 7ZE (United Kingdom); Lazarus, I.H. [STFC Daresbury, Daresbury, Warrington WA4 4AD (United Kingdom); Nolan, P.J. [Department of Physics, Oliver Lodge Laboratory, University of Liverpool, Liverpool L69 7ZE (United Kingdom); Simpson, J. [STFC Daresbury, Daresbury, Warrington WA4 4AD (United Kingdom); Unsworth, C. [Department of Physics, Oliver Lodge Laboratory, University of Liverpool, Liverpool L69 7ZE (United Kingdom)

    2015-02-11

    The AGATA spectrometer is an array of highly segmented high purity germanium detectors. The spectrometer uses pulse shape analysis in order to track Compton scattered γ-rays to increase the efficiency of nuclear spectroscopy studies. The characterisation of two high purity germanium detector capsules for AGATA of the same A-type has been performed at the University of Liverpool. This work will examine the uniformity of performance of the two capsules, including a comparison of the resolution and efficiency as well as a study of charge collection. The performance of the capsules shows good agreement, which is essential for the efficient operation of the γ-ray tracking array.

  7. Research progress of high mobility germanium based metal oxide semiconductor devices%高迁移率 Ge沟道器件研究进展∗

    Institute of Scientific and Technical Information of China (English)

    安霞; 黄如; 李志强; 云全新; 林猛; 郭岳; 刘朋强; 黎明; 张兴

    2015-01-01

    Germanium based metal oxide semiconductor (MOS) device has been a research hotspot and considered as a po-tential candidate for future complementary MOS (CMOS) technology due to its high and symmetric carrier mobility. However, the poor quality of gate dielectric/channel interface significantly restricts the performance of germanium based MOS devices. Besides, the solid-solubility and activation concentration of dopants in Ge are both quite low, and the dopants diffuse fast in Ge, which makes it difficult to achieve ultra-shallow junction with high dopant concentration, especially for Ge NMOS devices. To solve these problems, different techniques are proposed and overviewed. The proposed nitrogen-plasma-passivation method can effectively suppress the regrowth of germanium sub-oxide and reduce the interface state density. Thus the performance of the fabricated Ge NMOS device is significantly improved. To enhance the n-type dopant ac-tivation in Ge, the multiple implantation technique and the multiple annealing technique are proposed. High electrical activation over 1 × 1020 cm−3 is achieved, and the corresponding contact resistivity is reduced to 3.8 × 10−7 Ω·cm2. Besides, the implantation after germanide (IAG) technique is first proposed to modulate the Schottky barrier height (SBH). The record-low electron SBH of 0.10 eV is obtained by IAG technique, and the optimized process window is given. In addition, the poor thermal stability of NiGe restricts the further improvement of performance of Ge MOS device. P and Sb co-implantation technique and novel ammonium fluoride pretreatment method are proposed to improve the thermal stability of NiGe. The electrical characteristic of NiGe/Ge diode is also improved simultaneously. The results provide the guidelines for further enhancing the performances of germanium-based MOS devices.

  8. Powerful infrared emitting diodes

    Directory of Open Access Journals (Sweden)

    Kogan L. M.

    2012-02-01

    Full Text Available Powerful infrared LEDs with emission wavelength 805 ± 10, 870 ± 20 and 940 ± 10 nm developed at SPC OED "OPTEL" are presented in the article. The radiant intensity of beam diode is under 4 W/sr in the continuous mode and under 100 W/sr in the pulse mode. The radiation power of wide-angle LEDs reaches 1 W in continuous mode. The external quantum efficiency of emission IR diodes runs up to 30%. There also has been created infrared diode modules with a block of flat Fresnel lenses with radiant intensity under 70 W/sr.

  9. Novel approach for n-type doping of HVPE gallium nitride with germanium

    Science.gov (United States)

    Hofmann, Patrick; Krupinski, Martin; Habel, Frank; Leibiger, Gunnar; Weinert, Berndt; Eichler, Stefan; Mikolajick, Thomas

    2016-09-01

    We present a novel method for germanium doping of gallium nitride by in-situ chlorination of solid germanium during the hydride vapour phase epitaxy (HVPE) process. Solid germanium pieces were placed in the doping line with a hydrogen chloride flow directed over them. We deduce a chlorination reaction taking place at 800 ° C , which leads to germanium chloroform (GeHCl3) or germanium tetrachloride (GeCl4). The reactor shows a germanium rich residue after in-situ chlorination experiments, which can be removed by hydrogen chloride etching. All gallium nitride crystals exhibit n-type conductivity, which shows the validity of the in-situ chlorination of germanium for doping. A complex doping profile is found for each crystal, which was assigned to a combination of localised supply of the dopant and sample rotation during growth and switch-off effects of the HVPE reactor.

  10. Direct observations of the vacancy and its annealing in germanium

    DEFF Research Database (Denmark)

    Slotte, J.; Kilpeläinen, S.; Tuomisto, F.

    2011-01-01

    Weakly n-type doped germanium has been irradiated with protons up to a fluence of 3×1014 cm-2 at 35 K and 100 K in a unique experimental setup. Positron annihilation measurements show a defect lifetime component of 272±4 ps at 35 K in in situ positron lifetime measurements after irradiation at 100...

  11. Discovery of Gallium, Germanium, Lutetium, and Hafnium Isotopes

    CERN Document Server

    Gross, J L

    2011-01-01

    Currently, twenty-eight gallium, thirty-one germanium, thirty-five lutetium, and thirty-six hafnium isotopes have been observed and the discovery of these isotopes is discussed here. For each isotope a brief synopsis of the first refereed publication, including the production and identification method, is presented.

  12. Composite germanium monochromators - results for the TriCS

    Energy Technology Data Exchange (ETDEWEB)

    Schefer, J.; Fischer, S.; Boehm, M.; Keller, L.; Horisberger, M.; Medarde, M.; Fischer, P. [Paul Scherrer Inst. (PSI), Villigen (Switzerland)

    1997-09-01

    Composite germanium monochromators are in the beginning of their application in neutron diffraction. We show here the importance of the permanent quality control with neutrons on the example of the 311 wafers which will be used on the single crystal diffractometer TriCS at SINQ. (author) 2 figs., 3 refs.

  13. Active noise canceling system for mechanically cooled germanium radiation detectors

    Science.gov (United States)

    Nelson, Karl Einar; Burks, Morgan T

    2014-04-22

    A microphonics noise cancellation system and method for improving the energy resolution for mechanically cooled high-purity Germanium (HPGe) detector systems. A classical adaptive noise canceling digital processing system using an adaptive predictor is used in an MCA to attenuate the microphonics noise source making the system more deployable.

  14. Tunable electronic and optical behaviors of two-dimensional germanium carbide

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Zhuo; Li, Yangping, E-mail: liyp@nwpu.edu.cn; Li, Chenxi; Liu, Zhengtang

    2016-03-30

    Graphical abstract: In-plane and biaxial strain effects can provide a wide band gap engineering and new options of interband transitions for 2d-GeC in application of optoelectronic devices. - Highlights: • Tunable band structures when in-plane strain is applied on monolayer GeC. • Tunable electronic and optical properties of bilayer under strain along the c axis. • Tunable band structures are observed in multilayer GeC. - Abstract: The electronic and optical properties of two-dimensional graphene-like germanium carbide (2D-GeC) are calculated using first-principle calculation based on density functional theory. Monolayer GeC has a direct band gap of 2.19 eV. The imaginary part of the dielectric function shows a wide energy range of absorption spectrum for monolayer GeC. Tunable band structures are found for monolayer GeC through in-plane strain. In addition, the band structures and optical properties of bilayer GeC under strain along the c axis are analyzed. Multilayer GeC exhibits a direct band gap like monolayer GeC, and new options of interband transitions are found between layers. The results suggest that 2D-GeC could be a good candidate for optoelectronic such as light-emitting diodes, photodiodes, and solar cells.

  15. Chemically Modulated Graphene Diodes

    OpenAIRE

    Kim, Hye-young; Lee, Kangho; McEvoy, Niall; Yim, Chanyoung; Duesberg, Georg S.

    2013-01-01

    PUBLISHED We report the manufacture of novel graphene diode sensors (GDS), which are composed of monolayer graphene on silicon substrates, allowing exposure to liquids and gases. Parameter changes in the diode can be correlated with charge transfer from various adsorbates. The GDS allows for investigation and tuning of extrinsic doping of graphene with great reliability. The demonstrated recovery and long-term stability qualifies the GDS as a new platform for gas, environmental, and biocom...

  16. Light-emitting Diodes

    Science.gov (United States)

    Opel, Daniel R.; Hagstrom, Erika; Pace, Aaron K.; Sisto, Krisanne; Hirano-Ali, Stefanie A.; Desai, Shraddha

    2015-01-01

    Background: In the early 1990s, the biological significance of light-emitting diodes was realized. Since this discovery, various light sources have been investigated for their cutaneous effects. Study design: A Medline search was performed on light-emitting diode lights and their therapeutic effects between 1996 and 2010. Additionally, an open-label, investigator-blinded study was performed using a yellow light-emitting diode device to treat acne, rosacea, photoaging, alopecia areata, and androgenetic alopecia. Results: The authors identified several case-based reports, small case series, and a few randomized controlled trials evaluating the use of four different wavelengths of light-emitting diodes. These devices were classified as red, blue, yellow, or infrared, and covered a wide range of clinical applications. The 21 patients the authors treated had mixed results regarding patient satisfaction and pre- and post-treatment evaluation of improvement in clinical appearance. Conclusion: Review of the literature revealed that differing wavelengths of light-emitting diode devices have many beneficial effects, including wound healing, acne treatment, sunburn prevention, phototherapy for facial rhytides, and skin rejuvenation. The authors’ clinical experience with a specific yellow light-emitting diode device was mixed, depending on the condition being treated, and was likely influenced by the device parameters. PMID:26155326

  17. Germanium detector studies in the framework of the GERDA experiment

    Energy Technology Data Exchange (ETDEWEB)

    Budjas, Dusan

    2009-05-06

    The GERmanium Detector Array (GERDA) is an ultra-low background experiment under construction at Laboratori Nazionali del Gran Sasso. GERDA will search for {sup 76}Ge neutrinoless double beta decay with an aim for 100-fold reduction in background compared to predecessor experiments. This ambition necessitates innovative design approaches, strict selection of low-radioactivity materials, and novel techniques for active background suppression. The core feature of GERDA is its array of germanium detectors for ionizing radiation, which are enriched in {sup 76}Ge. Germanium detectors are the central theme of this dissertation. The first part describes the implementation, testing, and optimisation of Monte Carlo simulations of germanium spectrometers, intensively involved in the selection of low-radioactivity materials. The simulations are essential for evaluations of the gamma ray measurements. The second part concerns the development and validation of an active background suppression technique based on germanium detector signal shape analysis. This was performed for the first time using a BEGe-type detector, which features a small read-out electrode. As a result of this work, BEGe is now one of the two detector technologies included in research and development for the second phase of the GERDA experiment. A suppression of major GERDA backgrounds is demonstrated, with (0.93{+-}0.08)% survival probability for events from {sup 60}Co, (21{+-}3)% for {sup 226}Ra, and (40{+-}2)% for {sup 228}Th. The acceptance of {sup 228}Th double escape events, which are analogous to double beta decay, was kept at (89{+-}1)%. (orig.)

  18. Pulse shapes and surface effects in segmented germanium detectors

    Energy Technology Data Exchange (ETDEWEB)

    Lenz, Daniel

    2010-03-24

    It is well established that at least two neutrinos are massive. The absolute neutrino mass scale and the neutrino hierarchy are still unknown. In addition, it is not known whether the neutrino is a Dirac or a Majorana particle. The GERmanium Detector Array (GERDA) will be used to search for neutrinoless double beta decay of {sup 76}Ge. The discovery of this decay could help to answer the open questions. In the GERDA experiment, germanium detectors enriched in the isotope {sup 76}Ge are used as source and detector at the same time. The experiment is planned in two phases. In the first, phase existing detectors are deployed. In the second phase, additional detectors will be added. These detectors can be segmented. A low background index around the Q value of the decay is important to maximize the sensitivity of the experiment. This can be achieved through anti-coincidences between segments and through pulse shape analysis. The background index due to radioactive decays in the detector strings and the detectors themselves was estimated, using Monte Carlo simulations for a nominal GERDA Phase II array with 18-fold segmented germanium detectors. A pulse shape simulation package was developed for segmented high-purity germanium detectors. The pulse shape simulation was validated with data taken with an 19-fold segmented high-purity germanium detector. The main part of the detector is 18-fold segmented, 6-fold in the azimuthal angle and 3-fold in the height. A 19th segment of 5mm thickness was created on the top surface of the detector. The detector was characterized and events with energy deposited in the top segment were studied in detail. It was found that the metalization close to the end of the detector is very important with respect to the length of the of the pulses observed. In addition indications for n-type and p-type surface channels were found. (orig.)

  19. In-Situ Cleaning, Passivation, Functionalization, and Atomic Layer Deposition on Germanium and Silicon-Germanium

    Science.gov (United States)

    Kaufman-Osborn, Tobin Adar

    In recent years, germanium (Ge) and silicon-germanium (SiGe) have drawn significant interest as replacements of conventional silicon in the search for alternative materials for use in complementary metal-oxide-semiconductor (CMOS) devices due to their high electron and hole mobilities. In order to effectively implement Ge or SiGe as a replacement for silicon, two major challenges must be overcome: non-disruptive cleaning and surface passivation/functionalization. As electrical devices are increasingly scaled, it becomes especially crucial to effectively clean each unit cell on the Ge/SiGe surface without causing major disruption or damage to the surface. If air-induced defects or contaminants persist on the surface after cleaning, these defect sites may be un-reactive for functionalization and thereby will hinder device performance and/or the ability to aggressively scale device size. If a cleaning method is too aggressive leaving a rough or disordered surface, this can lower the mobility at the interface which will worsen device performance. For these reasons, it is necessary to develop a non-disruptive cleaning process that cleans each unit cell leaving a flat, ordered, and reactive surface. Once the Ge or SiGe surface is cleaned, in order to achieve a good electrical quality interface and a high nucleation density on the surface, all surface atoms must be passivated and functionalized allowing for aggressive device scaling. The interface must remain electrically passive in order to not inhibit electrical performance of the device. This study uses scanning tunneling microscopy (STM), scanning tunneling spectroscopy (STS), and x-ray photoelectron spectroscopy (XPS) to develop and analyze a completely in-situ non-disruptive cleaning method of the Ge surface using H2O2(g) and atomic hydrogen. After cleaning, the Ge or SiGe surface is passivated and functionalized using H2O2(g) as a method to improve upon the conventional H2O(g) passivation method by more than

  20. Directed and diode percolation

    Science.gov (United States)

    Redner, S.

    1982-03-01

    We study the novel percolation phenomena that occur in random-lattice networks consisting of resistor-like and diode-like bonds. Resistor bonds connect or "transmit information" in either direction along their length, while diodes connect in one direction only. We first treat the special case of directed bond percolation, in which the diodes are aligned along a preferred axis. Mean-field theory shows that clusters become extremely anisotropic near the percolation transition and that their shapes are characterized by two correlation lengths, one parallel and one transverse to the preferred axis. These lengths diverge with exponents ν∥=1 and ν⊥=12, respectively, from which we can show that the upper critical dimension for this system must be five. We also treat a more general random network on the square lattice containing resistors and diodes of arbitrary orientation. Duality arguments are applied to obtain exact results for the location of phase transitions in this system. We then use a position-space renormalization-group approach to map out the phase diagram and calculate critical exponents. This system has an isotropic percolating phase, and phases which percolate in only one direction. Novel types of transitions occur between these phases, in which the diode orientation plays a fundamental role. These percolating phases meet with the nonpercolating phase along a line of multicritical points, where concentration and orientational fluctuations are simultaneously critical.

  1. Improving Memory Characteristics of Hydrogenated Nanocrystalline Silicon Germanium Nonvolatile Memory Devices by Controlling Germanium Contents.

    Science.gov (United States)

    Kim, Jiwoong; Jang, Kyungsoo; Phu, Nguyen Thi Cam; Trinh, Thanh Thuy; Raja, Jayapal; Kim, Taeyong; Cho, Jaehyun; Kim, Sangho; Park, Jinjoo; Jung, Junhee; Lee, Youn-Jung; Yi, Junsin

    2016-05-01

    Nonvolatile memory (NVM) with silicon dioxide/silicon nitride/silicon oxynitride (ONO(n)) charge trap structure is a promising flash memory technology duo that will fulfill process compatibility for system-on-panel displays, down-scaling cell size and low operation voltage. In this research, charge trap flash devices were fabricated with ONO(n) stack gate insulators and an active layer using hydrogenated nanocrystalline silicon germanium (nc-SiGe:H) films at a low temperature. In this study, the effect of the interface trap density on the performance of devices, including memory window and retention, was investigated. The electrical characteristics of NVM devices were studied controlling Ge content from 0% to 28% in the nc-SiGe:H channel layer. The optimal Ge content in the channel layer was found to be around 16%. For nc-SiGe:H NVM with 16% Ge content, the memory window was 3.13 V and the retention data exceeded 77% after 10 years under the programming condition of 15 V for 1 msec. This showed that the memory window increased by 42% and the retention increased by 12% compared to the nc-Si:H NVM that does not contain Ge. However, when the Ge content was more than 16%, the memory window and retention property decreased. Finally, this research showed that the Ge content has an effect on the interface trap density and this enabled us to determine the optimal Ge content.

  2. An environmentally-friendly vacuum reduction metallurgical process to recover germanium from coal fly ash

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Lingen; Xu, Zhenming, E-mail: zmxu@sjtu.edu.cn

    2016-07-15

    Highlights: • An environmental friendly vacuum reduction metallurgical process is proposed. • Rare and valuable metal germanium from coal fly ash is recycled. • Residues are not a hazardous material and can be further recycled. • A germanium recovery ratio of 94.64% is obtained in pilot scale experiments. - Abstract: The demand for germanium in the field of semiconductor, electronics, and optical devices is growing rapidly; however, the resources of germanium are scarce worldwide. As a secondary material, coal fly ash could be further recycled to retrieve germanium. Up to now, the conventional processes to recover germanium have two problems as follows: on the one hand, it is difficult to be satisfactory for its economic and environmental effect; on the other hand, the recovery ratio of germanium is not all that could be desired. In this paper, an environmentally-friendly vacuum reduction metallurgical process (VRMP) was proposed to recover germanium from coal fly ash. The results of the laboratory scale experiments indicated that the appropriate parameters were 1173 K and 10 Pa with 10 wt% coke addition for 40 min, and recovery ratio germanium was 93.96%. On the basis of above condition, the pilot scale experiments were utilized to assess the actual effect of VRMP for recovery of germanium with parameter of 1473 K, 1–10 Pa and heating time 40 min, the recovery ratio of germanium reached 94.64%. This process considerably enhances germanium recovery, meanwhile, eliminates much of the water usage and residue secondary pollution compared with other conventional processes.

  3. Synthesis and Gas Phase Thermochemistry of Germanium-Containing Compounds

    Energy Technology Data Exchange (ETDEWEB)

    Classen, Nathan Robert [Iowa State Univ., Ames, IA (United States)

    2002-01-01

    The driving force behind much of the work in this dissertation was to gain further understanding of the unique olefin to carbene isomerization observed in the thermolysis of 1,1-dimethyl-2-methylenesilacyclobutane by finding new examples of it in other silicon and germanium compounds. This lead to the examination of a novel phenylmethylenesilacyclobut-2-ene, which did not undergo olefin to carbene rearrangement. A synthetic route to methylenegermacyclobutanes was developed, but the methylenegermacyclobutane system exhibited kinetic instability, making the study of the system difficult. In any case the germanium system decomposed through a complex mechanism which may not include olefin to carbene isomerization. However, this work lead to the study of the gas phase thermochemistry of a series of dialkylgermylene precursors in order to better understand the mechanism of the thermal decomposition of dialkylgermylenes. The resulting dialkylgermylenes were found to undergo a reversible intramolecular β C-H insertion mechanism.

  4. Synthesis and Gas Phase Thermochemistry of Germanium-Containing Compounds

    Energy Technology Data Exchange (ETDEWEB)

    Nathan Robert Classen

    2002-12-31

    The driving force behind much of the work in this dissertation was to gain further understanding of the unique olefin to carbene isomerization observed in the thermolysis of 1,1-dimethyl-2-methylenesilacyclobutane by finding new examples of it in other silicon and germanium compounds. This lead to the examination of a novel phenylmethylenesilacyclobut-2-ene, which did not undergo olefin to carbene rearrangement. A synthetic route to methylenegermacyclobutanes was developed, but the methylenegermacyclobutane system exhibited kinetic instability, making the study of the system difficult. In any case the germanium system decomposed through a complex mechanism which may not include olefin to carbene isomerization. However, this work lead to the study of the gas phase thermochemistry of a series of dialkylgermylene precursors in order to better understand the mechanism of the thermal decomposition of dialkylgermylenes. The resulting dialkylgermylenes were found to undergo a reversible intramolecular {beta} C-H insertion mechanism.

  5. Diffusion of n-type dopants in germanium

    Energy Technology Data Exchange (ETDEWEB)

    Chroneos, A., E-mail: alexander.chroneos@imperial.ac.uk [Engineering and Innovation, The Open University, Milton Keynes MK7 6AA (United Kingdom); Department of Materials, Imperial College, London SW7 2AZ (United Kingdom); Bracht, H., E-mail: bracht@uni-muenster.de [Institute of Materials Physics, University of Münster, Wilhelm-Klemm-Strasse 10, D-48149 Münster (Germany)

    2014-03-15

    Germanium is being actively considered by the semiconductor community as a mainstream material for nanoelectronic applications. Germanium has advantageous materials properties; however, its dopant-defect interactions are less understood as compared to the mainstream material, silicon. The understanding of self- and dopant diffusion is essential to form well defined doped regions. Although p-type dopants such as boron exhibit limited diffusion, n-type dopants such as phosphorous, arsenic, and antimony diffuse quickly via vacancy-mediated diffusion mechanisms. In the present review, we mainly focus on the impact of intrinsic defects on the diffusion mechanisms of donor atoms and point defect engineering strategies to restrain donor atom diffusion and to enhance their electrical activation.

  6. Long-term radiation damage to a spaceborne germanium spectrometer

    CERN Document Server

    Kurczynski, P; Hull, E L; Palmer, D; Harris, M J; Seifert, H; Teegarden, B J; Gehrels, N; Cline, T L; Ramaty, R; Sheppard, D; Madden, N W; Luke, P N; Cork, C P; Landis, D A; Malone, D F; Hurley, K

    1999-01-01

    The Transient Gamma-Ray Spectrometer aboard the Wind spacecraft in deep space has observed gamma-ray bursts and solar events for four years. The germanium detector in the instrument has gradually deteriorated from exposure to the approx 10 sup 8 p/cm sup 2 /yr(>100 MeV) cosmic-ray flux. Low-energy tailing and loss of efficiency, attributed to hole trapping and conversion of the germanium from n- to p-type as a result of crystal damage, were observed. Raising the detector bias voltage ameliorated both difficulties and restored the spectrometer to working operation. Together, these observations extend our understanding of the effects of radiation damage to include the previously unsuccessfully studied regime of long-term operation in space. (author)

  7. Environmental applications for an intrinsic germanium well detector

    Energy Technology Data Exchange (ETDEWEB)

    Stegnar, P.; Eldridge, J.S.; Teasley, N.A.; Oakes, T.W.

    1983-01-01

    The overall performance of an intrinsic germanium well detector for /sup 125/I measurements was investigated in a program of environmental surveillance. Concentrations of /sup 125/I and /sup 131/I were determined in thyroids of road-killed deer showing the highest activities of /sup 125/I in the animals from the near vicinity of Oak Ridge National Laboratory. This demonstrates the utility of road-killed deer as a bioindicator for radioiodine around nuclear facilities. 6 refs., 2 figs., 3 tabs.

  8. Massive silicon or germanium detectors at cryogenic temperature

    Energy Technology Data Exchange (ETDEWEB)

    Braggio, C. [Dip. Fisica dell' Universita di Ferrara and INFN, via del Paradiso 12, 44100 Ferrara (Italy); Bressi, G. [INFN, sez.Pavia, Via U. Bassi 6, 27100 Pavia (Italy); Carugno, G. [INFN, sez. Padova, Via Marzolo 8, 35131 Padova (Italy); Feltrin, E. [INFN, Lab. Naz. Legnaro, Via dell' Universita 1, 35020 Legnaro (PD) (Italy)]. E-mail: feltrin@lnl.infn.it; Galeazzi, G. [INFN, Lab. Naz. Legnaro, Via dell' Universita 1, 35020 Legnaro (PD) (Italy)

    2006-11-30

    Several massive silicon and germanium home-made detectors, working at cryogenic temperature, have been studied. They are the benchmarking schemes to check the possibility of realizing a semiconductor time projection chamber that could have various interesting applications in weak interaction problems. Reported here are the first results on investigations of charge collection efficiency and metal-semiconductor contact hardness. The leakage current, total depletion voltage and alpha or gamma spectroscopy are presented.

  9. Electronic Structure of Germanium Nanocrystal Films Probed with Synchrotron Radiation

    Energy Technology Data Exchange (ETDEWEB)

    Bostedt, C

    2002-05-01

    The fundamental structure--property relationship of semiconductor quantum dots has been investigated. For deposited germanium nanocrystals strong quantum confinement effects have been determined with synchrotron radiation based x-ray absorption and photoemission techniques. The nanocrystals are condensed out of the gas phase with a narrow size distribution and subsequently deposited in situ onto various substrates. The particles are crystalline in the cubic phase with a structurally disordered surface shell and the resulting film morphology depends strongly on the substrate material and condition. The disordered surface region has an impact on the overall electronic structure of the particles. In a size-dependent study, the conduction and valence band edge of germanium nanocrystals have been measured for the first time and compared to the bulk crystal. The band edges move to higher energies as the particle size is decreased, consistent with quantum confinement theory. To obtain a more accurate analysis of confinement effects in the empty states, a novel analysis method utilizing an effective particle size for the x-ray absorption experiment, which allows a deconvolution of absorption edge broadening effects, has been introduced. Comparison of the present study to earlier studies on silicon reveals that germanium exhibits stronger quantum confinement effects than silicon. Below a critical particle size of 2.3 {+-} 0.7 nm, the band gap of germanium becomes larger than that of silicon--even if it is the opposite for bulk materials. This result agrees phenomenologically with effective mass and tight binding theories but contradicts the findings of recent pseudopotential calculations. The discrepancy between theory and experiments is attributed to the differences in the theoretical models and experimental systems. The experimentally observed structural disorder of the particle surface has to be included in the theoretical models.

  10. Diffusion of tin in germanium: A GGA+U approach

    KAUST Repository

    Tahini, H. A.

    2011-10-18

    Density functional theory calculations are used to investigate the formation and diffusion of tin-vacancy pairs (SnV) in germanium(Ge). Depending upon the Fermi energy, SnV pairs can form in neutral, singly negative, or doubly negative charged states. The activation energies of diffusion, also as function of the Fermi energy, are calculated to lie between 2.48-3.65 eV, in agreement with and providing an interpretation of available experimental work.

  11. Optical properties of silicon germanium waveguides at telecommunication wavelengths.

    Science.gov (United States)

    Hammani, Kamal; Ettabib, Mohamed A; Bogris, Adonis; Kapsalis, Alexandros; Syvridis, Dimitris; Brun, Mickael; Labeye, Pierre; Nicoletti, Sergio; Richardson, David J; Petropoulos, Periklis

    2013-07-15

    We present a systematic experimental study of the linear and nonlinear optical properties of silicon-germanium (SiGe) waveguides, conducted on samples of varying cross-sectional dimensions and Ge concentrations. The evolution of the various optical properties for waveguide widths in the range 0.3 to 2 µm and Ge concentrations varying between 10 and 30% is considered. Finally, we comment on the comparative performance of the waveguides, when they are considered for nonlinear applications at telecommunications wavelengths.

  12. Strain-induced changes to the electronic structure of germanium

    KAUST Repository

    Tahini, H. A.

    2012-04-17

    Density functional theory calculations (DFT) are used to investigate the strain-induced changes to the electronic structure of biaxially strained (parallel to the (001), (110) and (111) planes) and uniaxially strained (along the [001], [110] and [111] directions) germanium (Ge). It is calculated that a moderate uniaxial strain parallel to the [111] direction can efficiently transform Ge to a direct bandgap material with a bandgap energy useful for technological applications. © 2012 IOP Publishing Ltd.

  13. Silicon Carbide Schottky Barrier Diode

    Science.gov (United States)

    Zhao, Jian H.; Sheng, Kuang; Lebron-Velilla, Ramon C.

    2004-01-01

    This chapter reviews the status of SiC Schottky barrier diode development. The fundamental of Schottky barrier diodes is first provided, followed by the review of high-voltage SiC Schottky barrier diodes, junction-barrier Schottky diodes, and merged-pin-Schottky diodes. The development history is reviewed ad the key performance parameters are discussed. Applications of SiC SBDs in power electronic circuits as well as other areas such as gas sensors, microwave and UV detections are also presented, followed by discussion of remaining challenges.

  14. Functionalization of Mechanochemically Passivated Germanium Nanoparticles via "Click" Chemistry

    Science.gov (United States)

    Purkait, Tapas Kumar

    Germanium nanoparticles (Ge NPs) may be fascinating for their electronic and optoelectronic properties, as the band gap of Ge NPs can be tuned from the infrared into the visible range of solar spectru. Further functionalization of those nanoparticles may potentially lead to numerous applications ranging from surface attachment, bioimaging, drug delivery and nanoparticles based devices. Blue luminescent germanium nanoparticles were synthesized from a novel top-down mechanochemical process using high energy ball milling (HEBM) of bulk germanium. Various reactive organic molecules (such as, alkynes, nitriles, azides) were used in this process to react with fresh surface and passivate the surface through Ge-C or Ge-N bond. Various purification process, such as gel permeation chromatography (GPC), Soxhlet dailysis etc. were introduced to purify nanoparticles from molecular impurities. A size separation technique was developed using GPC. The size separated Ge NPs were characterize by TEM, small angle X-ray scattering (SAXS), UV-vis absorption and photoluminescence (PL) emission spectroscopy to investigate their size selective properties. Germanium nanoparticles with alkyne termini group were prepared by HEBM of germanium with a mixture of n-alkynes and alpha, o-diynes. Additional functionalization of those nanoparticles was achieved by copper(I) catalyzed azide-alkyne "click" reaction. A variety of organic and organometallic azides including biologically important glucals have been reacted in this manner resulting in nanopartilces adorned with ferrocenyl, trimethylsilyl, and glucal groups. Additional functionalization of those nanoparticles was achieved by reactions with various azides via a Cu(I) catalyzed azide-alkyne "click" reaction. Various azides, including PEG derivatives and cylcodextrin moiety, were grafted to the initially formed surface. Globular nanoparticle arrays were formed through interparticle linking via "click" chemistry or "host-guest" chemistry

  15. Experimental considerations on the determination of radiation fields in an electron accelerator

    Energy Technology Data Exchange (ETDEWEB)

    Mondragon C, L.; Ramirez J, F. J.; Garcia H, J. M.; Torres B, M. A. [ININ, Departamento de Sistemas Electronicos, Carretera Mexico-Toluca s/n, 52750 Ocoyoacac, Estado de Mexico (Mexico); Lopez C, R.; Pena E, R. [Instituto Tecnologico de Toluca, Av. Tecnologico s/n, Ex-Rancho La Virgen, 52140 Metepec, Estado de Mexico (Mexico)

    2013-10-01

    The determination of the different radiation fields in an electron accelerator requires the use of selected radiation detectors, in this work we describe the experimental considerations on the determination of the intensity of electrons and X-rays generated by Bremsstrahlung in an experimental electron accelerator covering the energy range from 80 keV to 485 keV. A lithium- drifted silicon detector, a high-purity germanium detector, a scintillation detector and a Pin diode were used in the experiments. Spectroscopic measurements allowed us to verify the terminal voltage of the accelerator. The Pin photodiode can measure the intensity of X-rays produced, with this information, we could determine its relationship with both the electron beam current and the accelerating voltage of the accelerator. (Author)

  16. Ion-beam induced structure modifications in amorphous germanium; Ionenstrahlinduzierte Strukturmodifikationen in amorphem Germanium

    Energy Technology Data Exchange (ETDEWEB)

    Steinbach, Tobias

    2012-05-03

    Object of the present thesis was the systematic study of ion-beam induced structure modifications in amorphous germanium (a-Ge) layers due to low- (LEI) and high-energetic (SHI) ion irradiation. The LEI irradiation of crystalline Ge (c-Ge) effects because the dominating nuclear scattering of the ions on the solid-state atoms the formation of a homogeneous a-Ge Layer. Directly on the surface for fluences of two orders of magnitude above the amorphization fluence the formation of stable cavities independently on the irradiation conditions was observed. For the first time for the ion-beam induced cavity formation respectively for the steady expansion of the porous layer forming with growing fluence a linear dependence on the energy {epsilon}{sub n} deposed in nuclear processes was detected. Furthermore the formation of buried cavities was observed, which shows a dependence on the type of ions. While in the c-Ge samples in the range of the high electronic energy deposition no radiation defects, cavities, or plastic deformations were observed, the high electronic energy transfer in the 3.1 {mu}m thick pre-amorphized a-Ge surface layers leads to the formation of randomly distributed cavities. Basing on the linear connection between cavity-induced vertical volume expansion and the fluence determined for different energy transfers for the first time a material-specific threshold value of {epsilon}{sub e}{sup HRF}=(10.5{+-}1.0) kev nm{sup -1} was determined, above which the ion-beam induced cavity formation in a-Ge sets on. The anisotropic plastic deformation of th a-Ge layer superposed at inclined SHI irradiation on the cavity formation was very well described by an equation derived from the viscoelastic Maxwell model, but modified under regardment of the experimental results. The positive deformation yields determined thereby exhibit above a threshold value for the ion-beam induced plastic deformation {epsilon}{sub e}{sup S{sub a}}=(12{+-}2) keV nm{sup -1} for the first

  17. Oriented bottom-up growth of armchair graphene nanoribbons on germanium

    Science.gov (United States)

    Arnold, Michael Scott; Jacobberger, Robert Michael

    2016-03-15

    Graphene nanoribbon arrays, methods of growing graphene nanoribbon arrays and electronic and photonic devices incorporating the graphene nanoribbon arrays are provided. The graphene nanoribbons in the arrays are formed using a scalable, bottom-up, chemical vapor deposition (CVD) technique in which the (001) facet of the germanium is used to orient the graphene nanoribbon crystals along the [110] directions of the germanium.

  18. Operation of Ge- and GaAs-tunnel diodes under the influence of electron beams

    Science.gov (United States)

    El-Basit, W. Abd; Awad, Z. I. M.; Kamh, S. A.; Soliman, F. A. S.

    2017-02-01

    Nuclear radiation plays a very negative role in the semiconductor devices functionality, mainly when particular semiconductor devices are exposed to an extreme type of radiation. Tunneling is an important aspect of charge transport in semiconductor and molecular devices. So, the effect of electron irradiation on the current-voltage (I-V) characteristics of Germanium (Ge) and Gallium Arsenide (GaAs) tunneling diodes are reported at room temperature before and after irradiation. Electrons exposure, up to 3.73 My, of the tunnel diodes leads to a pronounced change in their electrical characteristics where the rate of change of the peak- and valley-currents, for Ge and GaAs tunnel diodes, due to electron exposure are shown to be about +53.6, +142 µA/MGy and +29.4, +53.6 µA/MGy, respectively. On the other hand, for the same irradiation doses, the rate of change of the valley- and forward-voltages and output power are shown to be about -44.9, -15.9 and -6.7 mW/MGy, for Ge tunnel diodes, respectively. While, GaAs samples, reported values of -81, -83 mV/MGy and -11.6 mW/MGy are observed. Besides, the peak to valley current ratio of both Ge- and GaAs TDs are proved to decrease due to electrons exposure, with damping ratios of about 78 and 81%, respectively.

  19. HEROICA: an Underground Facility for the Fast Screening of Germanium Detectors

    CERN Document Server

    Andreotti, E; Maneschg, W; Barros, N; Benato, G; Brugnera, R; Costa, F; Falkenstein, R; Guthikonda, K K; Hegai, A; Hemmer, S; Hult, M; Jaenner, K; Kihm, T; Lehnert, B; Liao, H; Lubashevskiy, A; Lutter, G; Marissens, G; Modenese, L; Pandola, L; Reissfelder, M; Sada, C; Salathe, M; Schmitt, C; Schulz, O; Schwingenheuer, B; Turcato, M; Ur, C; von Sturm, K; Wagner, V; Westermann, J

    2013-01-01

    An infrastructure to characterize germanium detectors has been designed and constructed at the HADES Underground Research Laboratory, located in Mol (Belgium). Thanks to the 223m overburden of clay and sand, the muon flux is lowered by four orders of magnitude. This natural shield minimizes the exposure of radio-pure germanium material to cosmic radiation resulting in a significant suppression of cosmogenic activation in the germanium detectors. The project has been strongly motivated by a special production of germanium detectors for the GERDA experiment. GERDA, currently collecting data at the Laboratori Nazionali del Gran Sasso of INFN, is searching for the neutrinoless double beta decay of 76Ge. In the near future, GERDA will increase its mass and sensitivity by adding new Broad Energy Germanium (BEGe) detectors. The production of the BEGe detectors is done at Canberra in Olen (Belgium), located about 30km from the underground test site. Therefore, HADES is used both for storage of the crystals over night...

  20. Femtosecond Laser Processing of Germanium: An Ab Initio Molecular Dynamics Study

    CERN Document Server

    Ji, Pengfei

    2016-01-01

    An ab initio molecular dynamics study of femtosecond laser processing of germanium is presented in this paper. The method based on the finite temperature density functional theory is adopted to probe the structural change, thermal motion of the atoms, dynamic property of the velocity autocorrelation, and the vibrational density of states. Starting from a cubic system at room temperature (300 K) containing 64 germanium atoms with an ordered arrangement of 1.132 nm in each dimension, the femtosecond laser processing is simulated by imposing the Nose Hoover thermostat to the electronic subsystem lasting for ~100 fs and continuing with microcanonical ensemble simulation of ~200 fs. The simulation results show solid, liquid and gas phases of germanium under adjusted intensities of the femtosecond laser irradiation. We find the irradiated germanium distinguishes from the usual germanium crystal by analyzing their melting and dynamic properties.

  1. Suspended germanium cross-shaped microstructures for enhancing biaxial tensile strain

    Science.gov (United States)

    Ishida, Satomi; Kako, Satoshi; Oda, Katsuya; Ido, Tatemi; Iwamoto, Satoshi; Arakawa, Yasuhiko

    2016-04-01

    We fabricate a suspended germanium cross-shaped microstructure to biaxially enhance residual tensile strain using a germanium epilayer directly grown on a silicon-on-insulator substrate. Such a suspended germanium system with enhanced biaxial tensile strain will be a promising platform for incorporating optical cavities toward the realization of germanium lasers. We demonstrate systematic control over biaxial tensile strain and photoluminescence peaks by changing structural geometry. The photoluminescence peaks corresponding to the direct recombination between the conduction Γ valley and two strain-induced separated valence bands have been clearly assigned. A maximum biaxial strain of 0.8% has been achieved, which is almost half of that required to transform germanium into a direct band-gap semiconductor.

  2. Infrared absorption study of neutron-transmutation-doped germanium

    Science.gov (United States)

    Park, I. S.; Haller, E. E.

    1988-01-01

    Using high-resolution far-infrared Fourier transform absorption spectroscopy and Hall effect measurements, the evolution of the shallow acceptor and donor impurity levels in germanium during and after the neutron transmutation doping process was studied. The results show unambiguously that the gallium acceptor level concentration equals the concentration of transmutated Ge-70 atoms during the whole process indicating that neither recoil during transmutation nor gallium-defect complex formation play significant roles. The arsenic donor levels appear at full concentration only after annealing for 1 h at 450 C. It is shown that this is due to donor-radiation-defect complex formation. Again, recoil does not play a significant role.

  3. Resonance-enhanced waveguide-coupled silicon-germanium detector

    CERN Document Server

    Alloatti, Luca

    2016-01-01

    A photodiode with 0.55$\\pm$0.1 A/W responsivity at a wavelength of 1176.9 nm has been fabricated in a 45 nm microelectronics silicon-on-insulator foundry process. The resonant waveguide photodetector exploits carrier generation in silicon-germanium (SiGe) within a microring which is compatible with high-performance electronics. A 3 dB bandwidth of 5 GHz at -4 V bias is obtained with a dark current of less than 20 pA.

  4. Homo and hetero epitaxy of Germanium using isobutylgermane

    Energy Technology Data Exchange (ETDEWEB)

    Attolini, G. [CNR-IMEM Institute, Parco Area delle Scienze 37/A, 43010 Fontanini, Parma (Italy); Bosi, M. [CNR-IMEM Institute, Parco Area delle Scienze 37/A, 43010 Fontanini, Parma (Italy)], E-mail: bosi@imem.cnr.it; Musayeva, N.; Pelosi, C.; Ferrari, C.; Arumainathan, S. [CNR-IMEM Institute, Parco Area delle Scienze 37/A, 43010 Fontanini, Parma (Italy); Timo, G. [CESI Ricerca S.P.A., Via Rubattino 54, 20134 Milano (Italy)], E-mail: Gianluca.Timo@cesiricerca.it

    2008-11-03

    Nominally undoped Ge epitaxial layers were deposited on Ge and GaAs substrates by means of Metal-Organic Vapor Phase (MOVPE) using a novel Germanium source, isobutylgermane (iBuGe), by Rohm and Haas Electronic Materials LLC (USA). High Resolution X-ray Diffraction, Atomic Force Microscopy and Raman spectroscopy were combined to characterize the layers. Ge layers were deposited using AsH{sub 3} as a surfactant and several growth procedures were tested. The use of arsine reduced the growth rate and also significantly improved the epitaxial quality and surface roughness.

  5. Point defect engineering strategies to retard phosphorous diffusion in germanium

    KAUST Repository

    Tahini, H. A.

    2013-01-01

    The diffusion of phosphorous in germanium is very fast, requiring point defect engineering strategies to retard it in support of technological application. Density functional theory corroborated with hybrid density functional calculations are used to investigate the influence of the isovalent codopants tin and hafnium in the migration of phosphorous via the vacancy-mediated diffusion process. The migration energy barriers for phosphorous are increased significantly in the presence of oversized isovalent codopants. Therefore, it is proposed that tin and in particular hafnium codoping are efficient point defect engineering strategies to retard phosphorous migration. © the Owner Societies 2013.

  6. Radiation-enhanced self- and boron diffusion in germanium

    DEFF Research Database (Denmark)

    Schneider, S.; Bracht, H.; Klug, J.N.

    2013-01-01

    We report experiments on proton radiation-enhanced self- and boron (B) diffusion in germanium (Ge) for temperatures between 515 ∘ C and 720 ∘ C. Modeling of the experimental diffusion profiles measured by means of secondary ion mass spectrometry is achieved on the basis of the Frenkel pair reaction...... to an enhanced self- and B diffusion in Ge. Analysis of the experimental profiles yields data for the diffusion of self-interstitials (I ) and the thermal equilibrium concentration of BI pairs in Ge. The temperature dependence of these quantities provides the migration enthalpy of I and formation enthalpy of BI...

  7. Properties Of Gallium-doped Hydrogenated Amorphous Germanium

    OpenAIRE

    1995-01-01

    The effects of adding small quantities of gallium atoms to hydrogenated amorphous germanium (a-Ge:H) on its dark-conductivity, band-gap, electronic density of states and the hydrogen bonding, were studied in detail by dark-conductivity, optical and infrared-transmission, and photothermal- deflection-spectroscopy measurements. Films of a-Ge:H having relative Ga atomic concentrations ranging between 3×10-5 and 1×10-2 were deposited by the cosputtering of solid Ge and Ga targets in a rf-plasma s...

  8. Effect of germanium dioxide on growth of Spirulina platensis

    Science.gov (United States)

    Cao, Ji-Xiang

    1996-12-01

    This study on the effect of different concentrations of germanium dioxide (GeO2) on the specific growth rate (SGR), pigment contents, protein content and amino acid composition of Spirulina platensis showed that Ge was not the essential element of this alga; that GeO2 could speed up growth and raise protein content of S. platensis, and could possibly influence the photosynthesis system. The concentration range of GeO2 beneficial to growth of S. platensis is from 5 100mg/l. GeO2 is proposed to be utilized to remove contamination by Chlorella spp. usually occurring in the cultivation of Spirulina.

  9. Cryostat for Ultra-low-energy Threshold Germanium Spectrometers

    CERN Document Server

    Aalseth, Craig E; Fast, James E; Hossbach, Todd W; Orrell, John L; Overman, Cory T; Vandevender, Brent A

    2012-01-01

    This paper presents progress on the development of a cryostat intended to improve upon the low-energy threshold (below 0.5 keV) of p-type point contact germanium gamma-ray spectrometers. Ultra-low energy thresholds are important in the detection of low-energy nuclear recoils, an event class relevant to both dark matter direct detection and measurement of coherent neutrino-nucleus scattering. The cryostat design, including a thermal and electrical-field model, is given. A prototype cryostat has been assembled and data acquired to evaluate its vacuum and thermal performance.

  10. Uniaxially stressed germanium with fundamental direct band gap

    OpenAIRE

    Geiger, R.; Zabel, T.; Marin, E; Gassenq, A.; Hartmann, J.-M.; Widiez, J.; Escalante, J.; Guilloy, K.; Pauc, N.; Rouchon, D.; Diaz, G. Osvaldo; Tardif, S; Rieutord, F.; Duchemin, I.; Niquet, Y. -M.

    2015-01-01

    We demonstrate the crossover from indirect- to direct band gap in tensile-strained germanium by temperature-dependent photoluminescence. The samples are strained microbridges that enhance a biaxial strain of 0.16% up to 3.6% uniaxial tensile strain. Cooling the bridges to 20 K increases the uniaxial strain up to a maximum of 5.4%. Temperature-dependent photoluminescence reveals the crossover to a fundamental direct band gap to occur between 4.0% and 4.5%. Our data are in good agreement with n...

  11. Phonon Quasidiffusion in Cryogenic Dark Matter Search Large Germanium Detectors

    CERN Document Server

    Leman, S W; McCarthy, K A; Pyle, M; Resch, R; Sadoulet, B; Sundqvist, K M; Brink, P L; Cherry, M; Silva, E Do Couto E; Figueroa-Feliciano, E; Mirabolfathi, N; Serfass, B; Tomada, A

    2011-01-01

    We present results on quasidiffusion studies in large, 3 inch diameter, 1 inch thick [100] high purity germanium crystals, cooled to 50 mK in the vacuum of a dilution refrigerator, and exposed with 59.5 keV gamma-rays from an Am-241 calibration source. We compare data obtained in two different detector types, with different phonon sensor area coverage, with results from a Monte Carlo. The Monte Carlo includes phonon quasidiffusion and the generation of phonons created by charge carriers as they are drifted across the detector by ionization readout channels.

  12. Band Anticrossing in Dilute Germanium Carbides Using Hybrid Functionals

    CERN Document Server

    Stephenson, Chad A; Qi, Meng; Penninger, Michael; Schneider, William; Wistey, Mark A

    2014-01-01

    Dilute germanium carbides (Ge1-xCx) offer a direct bandgap for compact silicon photonics, but widely varying results have been reported. This work uses ab initio simulations with HSE06 hybrid functionals and spin-orbit coupling to study the band structure behavior in the absence of defects. Contrary to Vegard's law, the conduction band minimum at k=0 is consistently found to decrease with increasing C content, while L and X valleys remain nearly unchanged. A vanishing bandgap was observed for all alloys with x>0.017. Conduction bands deviate from a constant-potential band anticrossing model except near the center of the Brillouin zone.

  13. Hyperchaos via X-Diode

    DEFF Research Database (Denmark)

    Lindberg, Erik; Tamasevicius, A.; Cenys, A.

    1998-01-01

    A Chaos diode (X-diode) with a hysteric current-voltage characteristic has been used to generate hyperchaotic oscillations characterized with multiple positive Lyapunov exponents. The hyperchaotic oscillators comprise a X-diode in parallel with an M'th order LC loop (M.GE.4). Numerical simulations...... and hardware experiments have beeen performed. An appropriate mathematical model is provided and is used to calculate the Lyapunov exponents. Synchronization properties have been investigated....

  14. Diode, transistor & fet circuits manual

    CERN Document Server

    Marston, R M

    2013-01-01

    Diode, Transistor and FET Circuits Manual is a handbook of circuits based on discrete semiconductor components such as diodes, transistors, and FETS. The book also includes diagrams and practical circuits. The book describes basic and special diode characteristics, heat wave-rectifier circuits, transformers, filter capacitors, and rectifier ratings. The text also presents practical applications of associated devices, for example, zeners, varicaps, photodiodes, or LEDs, as well as it describes bipolar transistor characteristics. The transistor can be used in three basic amplifier configuration

  15. Germanium electroabsorption devices on silicon for optical interconnects

    Science.gov (United States)

    Kuo, Yu-Hsuan; Miller, David A. B.; Harris, James S.

    2006-02-01

    Monolithic integration of both electronic and optic components into a silicon-based platform will provide high-speed optical interconnects and solve the power-bandwidth limitations. However, the lack of strong optical effects in silicon has limited the progress in the transmitter-end applications. Recently our research had demonstrated strong quantum-confined Stark effect (QCSE) in germanium quantum-well modulators on silicon. This first strong physical mechanism for group-IV photonics has a comparable behavior to III-V material systems. With proper quantum well structure design, we also demonstrated QCSE in C-band for long distance communications with CMOS-operational temperatures. The device fabrication is also compatible with standard silicon chip processes. Since the QCSE, a type of electroabsorption effect, requires much shorter optical length, it is suitable for device miniaturizations and possible for use in both lateral and vertical modulator configurations. Moreover, silicon-germanium electroabsorption modulators are inherently photodetectors, this advantage will enable efficient transmitter/receiver applications for optical interconnects.

  16. Superconductivity and unexpected chemistry of germanium hydrides under pressure

    Science.gov (United States)

    Davari Esfahani, M. Mahdi; Oganov, Artem R.; Niu, Haiyang; Zhang, Jin

    2017-04-01

    Following the idea that hydrogen-rich compounds might be high-Tc superconductors at high pressures, and the very recent breakthrough in predicting and synthesizing hydrogen sulfide with record-high Tc=203 K , an ab initio evolutionary algorithm for crystal structure prediction was employed to find stable germanium hydrides. In addition to the earlier structure of germane with space group Ama2, we propose a C2/m structure, which is energetically more favorable at pressures above 278 GPa (with inclusion of zero-point energy). Our calculations indicate that the C2/m phase of germane is a superconductor with Tc=67 K at 280 GPa. Germane is found to become thermodynamically unstable to decomposition to hydrogen and the compound Ge3H11 at pressures above 300 GPa. Ge3H11 with space group I 4 ¯m 2 is found to become stable at above 285 GPa with Tc=43 K . We find that the pressure-induced phase stability of germanium hydrides is distinct from analogous isoelectronic systems, e.g., Si hydrides and Sn hydrides. Superconductivity stems from large electron-phonon coupling associated with the wagging, bending, and stretching intermediate-frequency modes derived mainly from hydrogen.

  17. Materials and Fabrication Issues for Large Machined Germanium Immersion Gratings

    Energy Technology Data Exchange (ETDEWEB)

    Kuzmenko, P J; Davis, P J; Little, S L; Hale, L C

    2006-05-22

    LLNL has successfully fabricated small (1.5 cm{sup 2} area) germanium immersion gratings. We studied the feasibility of producing a large germanium immersion grating by means of single point diamond flycutting. Our baseline design is a 63.4o blaze echelle with a 6 cm beam diameter. Birefringence and refractive index inhomogeneity due to stresses produced by the crystal growth process are of concern. Careful selection of the grating blank and possibly additional annealing to relieve stress will be required. The Large Optics Diamond Turning Machine (LODTM) at LLNL is a good choice for the fabrication. It can handle parts up to 1.5 meter in diameter and 0.5 meter in length and is capable of a surface figure accuracy of better than 28 nm rms. We will describe the machine modifications and the machining process for a large grating. A next generation machine, the Precision Optical Grinder and Lathe (POGAL), currently under development has tighter specifications and could produce large gratings with higher precision.

  18. Reduction of phosphorus diffusion in germanium by fluorine implantation

    Science.gov (United States)

    El Mubarek, H. A. W.

    2013-12-01

    The control of phosphorus (P) diffusion in germanium (Ge) is essential for the realisation of ultrashallow n-type junctions in Ge. This work reports a detailed study of the effect of fluorine (F) co-implantation on P diffusion in Ge. P and F profiles were characterized by secondary ion mass spectroscopy. The ion implantation damage was investigated using cross sectional transmission electron microscopy. It is shown that F co-implantation reduces the implanted P profile width and reduces both intrinsic and extrinsic P diffusion in Ge. A defect mediated mechanism for the strong influence of F co-implantation on P diffusion in Ge is proposed and invokes the formation of FnVm clusters in the F-amorphized Ge layer. A fraction of these FnVm clusters decorate the interstitial type end-of-range defects in the re-grown Ge layer and the rest react during re-growth with interstitial germanium atoms diffusing back from the amorphous crystalline interface. The Ge vacancies are then annihilated and mobile interstitial F is released and out diffuses from the surface. This results in a re-grown Ge layer which has a low vacancy concentration and in which the P diffusion rate is reduced. These results open the way to the realization of enhanced Ge n-type devices.

  19. Reduction of phosphorus diffusion in germanium by fluorine implantation

    Energy Technology Data Exchange (ETDEWEB)

    El Mubarek, H. A. W. [School of Electrical and Electronic Engineering, University of Manchester, Manchester M13 9PL (United Kingdom)

    2013-12-14

    The control of phosphorus (P) diffusion in germanium (Ge) is essential for the realisation of ultrashallow n-type junctions in Ge. This work reports a detailed study of the effect of fluorine (F) co-implantation on P diffusion in Ge. P and F profiles were characterized by secondary ion mass spectroscopy. The ion implantation damage was investigated using cross sectional transmission electron microscopy. It is shown that F co-implantation reduces the implanted P profile width and reduces both intrinsic and extrinsic P diffusion in Ge. A defect mediated mechanism for the strong influence of F co-implantation on P diffusion in Ge is proposed and invokes the formation of F{sub n}V{sub m} clusters in the F-amorphized Ge layer. A fraction of these F{sub n}V{sub m} clusters decorate the interstitial type end-of-range defects in the re-grown Ge layer and the rest react during re-growth with interstitial germanium atoms diffusing back from the amorphous crystalline interface. The Ge vacancies are then annihilated and mobile interstitial F is released and out diffuses from the surface. This results in a re-grown Ge layer which has a low vacancy concentration and in which the P diffusion rate is reduced. These results open the way to the realization of enhanced Ge n-type devices.

  20. Structural and electronic properties of hybrid silicon-germanium nanosheets

    Directory of Open Access Journals (Sweden)

    F. L. Pérez Sánchez

    2014-12-01

    Full Text Available Using first principles molecular calculations, based on the Density Functional Theory (DFT, structural and electronic properties of hybrid graphene—like silicon—germanium circular nanosheets of hexagonal symmetry are investigated. The exchange—correlation functional of Perdew—Wang (PW in the local spin density approximation (LSDA based on the pseudopotentials of Dolg—Bergnre is applied. The finite extension nanosheets are represented by the CnHm—like cluster model with mono—hydrogenated armchair edges. Changes of the physicochemical properties were analyzed to learn on the chemical composition. We have obtained that the corrugation of the hybrid nanosheets is maintained (with respect to the pristine nanosheets of Ge and Si and is more pronounced when there is a high percentage of germanium. Moreover, hybrid nanosheets have ionic bonds (polarity in the interval from 0.18 to 0.77 D and exhibit a semimetal behavior. Three types of chemical compositions are considered: 1 the one—one relationship, 2 formation of Ge dimers and 3 formation of Ge hexagons. In each case it is observed an increase in the chemical reactivity. Finally, analyzing the work function we conclude that in cases 1 and 2 the chemical compositions improve the efficiency of the field emission and thereby they could expand the scope of nanotechnology applications.

  1. Germanium ion implantation to Improve Crystallinity during Solid Phase Epitaxy and the effect of AMU Contamination

    Science.gov (United States)

    Lee, K. S.; Yoo, D. H.; Son, G. H.; Lee, C. H.; Noh, J. H.; Han, J. J.; Yu, Y. S.; Hyung, Y. W.; Yang, J. K.; Song, D. G.; Lim, T. J.; Kim, Y. K.; Lee, S. C.; Lee, H. D.; Moon, J. T.

    2006-11-01

    Germanium ion implantation was investigated for crystallinity enhancement during solid phase epitaxial regrowth (SPE) using high current implantation equipment. Electron back-scatter diffraction(EBSD) measurement showed numerical increase of 19 percent of signal, which might be due to pre-amorphization effect on silicon layer deposited by LPCVD process with germanium ion implantation. On the other hand, electrical property such as off-leakage current of NMOS transistor degraded in specific regions of wafers, which implied non-uniform distribution of donor-type impurities into channel area. It was confirmed that arsenic atoms were incorporated into silicon layer during germanium ion implantation. Since the equipment for germanium pre-amorphization implantation(PAI) was using several source gases such as BF3 and AsH3, atomic mass unit(AMU) contamination during PAI of germanium with AMU 74 caused the incorporation of arsenic with AMU 75 which resided in arc-chamber and other parts of the equipment. It was effective to use germanium isotope of AMU 72 to suppress AMU contamination, however it led serious reduction of productivity because of decrease in beam current by 30 percent as known to be difference in isotope abundance. It was effective to use enriched germanium source gas with AMU 72 in order to improve productivity. Spatial distribution of arsenic impurities in wafers was closely related to hardware configuration of ion implantation equipment.

  2. Diode laser applications in urology

    Science.gov (United States)

    Sam, Richard C.; Esch, Victor C.

    1995-05-01

    Diode lasers are air-cooled, efficient, compact devices which have the potential of very low cost when produced in quantity. The characteristics of diode lasers are discussed. Their applications in interstitial thermal treatment of the prostate, and laser ablation of prostate tissues, will be presented.

  3. Temperature dependence of continuum and time resolved photoluminescence of germanium nanostructures

    Directory of Open Access Journals (Sweden)

    M Ardyanian

    2011-12-01

    Full Text Available   Germanium nanostructures were generated in the post annealed germanium oxide thin films. Visible and near infrared photoluminescence bands were observed in the samples annealed at 350°C and 400°C, respectively. These different luminescence ranges are attributed to the presence of the defects in oxide matrix and quantum confinement effect in the germanium nanostructures, respectively. Decay time and temperature dependence of the luminescence for different bands were investigated, which confirmed our idea about the origin of the luminescence.

  4. Discrimination of nuclear and electronic recoil events using plasma effect in germanium detectors

    Science.gov (United States)

    Wei, W.-Z.; Liu, J.; Mei, D.-M.

    2016-07-01

    We report a new method of using the plasma time difference, which results from the plasma effect, between the nuclear and electronic recoil events in high-purity germanium detectors to distinguish these two types of events in the search for rare physics processes. The physics mechanism of the plasma effect is discussed in detail. A numerical model is developed to calculate the plasma time for nuclear and electronic recoils at various energies in germanium detectors. It can be shown that under certain conditions the plasma time difference is large enough to be observable. The experimental aspects in realizing such a discrimination in germanium detectors is discussed.

  5. Discrimination of nuclear and electronic recoil events using plasma effect in germanium detectors

    CERN Document Server

    Wei, W -Z; Mei, D -M

    2016-01-01

    We report a new method of using the plasma time difference, which results from the plasma effect, between the nuclear and electronic recoil events in high-purity germanium detectors to distinguish these two types of events in the search for rare physics processes. The physics mechanism of the plasma effect is discussed in detail. A numerical model is developed to calculate the plasma time for nuclear and electronic recoils at various energies in germanium detectors. It can be shown that under certain conditions the plasma time difference is large enough to be observable. The experimental aspects in realizing such a discrimination in germanium detectors is discussed.

  6. Gallium phosphide high temperature diodes

    Science.gov (United States)

    Chaffin, R. J.; Dawson, L. R.

    1981-01-01

    High temperature (300 C) diodes for geothermal and other energy applications were developed. A comparison of reverse leakage currents of Si, GaAs, and GaP was made. Diodes made from GaP should be usable to 500 C. A Liquid Phase Epitaxy (LPE) process for producing high quality, grown junction GaP diodes is described. This process uses low vapor pressure Mg as a dopant which allows multiple boat growth in the same LPE run. These LPE wafers were cut into die and metallized to make the diodes. These diodes produce leakage currents below ten to the -9th power A/sq cm at 400 C while exhibiting good high temperature rectification characteristics. High temperature life test data is presented which shows exceptional stability of the V-I characteristics.

  7. Characteristics of GRIFFIN high-purity germanium clover detectors

    Science.gov (United States)

    Rizwan, U.; Garnsworthy, A. B.; Andreoiu, C.; Ball, G. C.; Chester, A.; Domingo, T.; Dunlop, R.; Hackman, G.; Rand, E. T.; Smith, J. K.; Starosta, K.; Svensson, C. E.; Voss, P.; Williams, J.

    2016-06-01

    The Gamma-Ray Infrastructure For Fundamental Investigations of Nuclei, GRIFFIN, is a new experimental facility for radioactive decay studies at the TRIUMF-ISAC laboratory. The performance of the 16 high-purity germanium (HPGe) clover detectors that will make up the GRIFFIN spectrometer is reported. The energy resolution, efficiency, timing resolution, crosstalk and preamplifier properties of each crystal were measured using a combination of analog and digital data acquisition techniques. The absolute efficiency and add-back factors are determined for the energy range of 80-3450 keV. The detectors show excellent performance with an average over all 64 crystals of a FWHM energy resolution of 1.89(6) keV and relative efficiency with respect to a 3 in . × 3 in . NaI detector of 41(1)% at 1.3 MeV.

  8. Modeling of germanium detector and its sourceless calibration

    Directory of Open Access Journals (Sweden)

    Steljić Milijana

    2008-01-01

    Full Text Available The paper describes the procedure of adapting a coaxial high-precision germanium detector to a device with numerical calibration. The procedure includes the determination of detector dimensions and establishing the corresponding model of the system. In order to achieve a successful calibration of the system without the usage of standard sources, Monte Carlo simulations were performed to determine its efficiency and pulse-height response function. A detailed Monte Carlo model was developed using the MCNP-5.0 code. The obtained results have indicated that this method represents a valuable tool for the quantitative uncertainty analysis of radiation spectrometers and gamma-ray detector calibration, thus minimizing the need for the deployment of radioactive sources.

  9. Young’s modulus of [111] germanium nanowires

    Directory of Open Access Journals (Sweden)

    M. Maksud

    2015-11-01

    Full Text Available This paper reports a diameter-independent Young’s modulus of 91.9 ± 8.2 GPa for [111] Germanium nanowires (Ge NWs. When the surface oxide layer is accounted for using a core-shell NW approximation, the YM of the Ge core approaches a near theoretical value of 147.6 ± 23.4 GPa. The ultimate strength of a NW device was measured at 10.9 GPa, which represents a very high experimental-to-theoretical strength ratio of ∼75%. With increasing interest in this material system as a high-capacity lithium-ion battery anode, the presented data provide inputs that are essential in predicting its lithiation-induced stress fields and fracture behavior.

  10. Young’s modulus of [111] germanium nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Maksud, M.; Palapati, N. K. R.; Subramanian, A., E-mail: asubramanian@vcu.edu [Department of Mechanical and Nuclear Engineering, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Yoo, J. [Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Harris, C. T. [Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)

    2015-11-01

    This paper reports a diameter-independent Young’s modulus of 91.9 ± 8.2 GPa for [111] Germanium nanowires (Ge NWs). When the surface oxide layer is accounted for using a core-shell NW approximation, the YM of the Ge core approaches a near theoretical value of 147.6 ± 23.4 GPa. The ultimate strength of a NW device was measured at 10.9 GPa, which represents a very high experimental-to-theoretical strength ratio of ∼75%. With increasing interest in this material system as a high-capacity lithium-ion battery anode, the presented data provide inputs that are essential in predicting its lithiation-induced stress fields and fracture behavior.

  11. Specific features of phase transformations in germanium monotelluride

    Energy Technology Data Exchange (ETDEWEB)

    Bigvava, A.D.; Gabedava, A.A.; Kunchuliya, Eh.D.; Shvangiradze, R.R.

    1981-12-01

    Phase transformations in germanium monotelluride are studied using DRON-0.5 and DRON-1 plants with high-temperature chamber GPVT-1500 at Cu, Ksub(..cap alpha..) radiation. It is shown that in the whole homogeneity range ..cap alpha.. GeTe is a metastable phase which is formed under the conditions of fast cooling of alloy from temperatures >=Tsub(cub) (temperature of transition in cubic crystal system). An equilibrium ..gamma..-phase is obtained by annealing of dispersed powders and metal-ceramic specimens of alloys with 50.3; 50.6; 50.9 at % Te. Lattice parameters of rhombic ..gamma..-phase do not depend on tellurium content in initial ..cap alpha..- phase. ..cap alpha --> gamma.. transformation is observed at any temperature less than Tsub(cub) with the change of alloy composition, namely tellurium precipitation. ..gamma..-phase transforms into ..beta.. at higher temperatures than ..cap alpha..-phase.

  12. Experimental investigation on oxidation kinetics of germanium by ozone

    Science.gov (United States)

    Wang, Xiaolei; Zhao, Zhiqian; Xiang, Jinjuan; Wang, Wenwu; Zhang, Jing; Zhao, Chao; Ye, Tianchun

    2016-12-01

    Oxidation kinetics of germanium surface by ozone at low temperature (≤400 °C) is experimentally investigated. The growth process contains two regions: initial linear growth region and following parabolic growth region. The GeOx thickness vs. oxidation time plot obeys the well-known Deal-Grove or linear parabolic model. The linear growth region contains reaction of oxygen atoms with surface bond and back bonds of outmost Ge layer. And the activation energy is experimentally estimated to be 0.06 eV. Such small activation energy indicates that the linear growth region is nearly barrier-less. The parabolic growth region starts when the oxygen atoms diffuse into back bonds of second outmost Ge layers. And the activation energy for this process is found to be 0.54 eV. Furthermore, in the ozone oxidation it is not O3 molecules but O radicals that go through the GeOx film.

  13. Laser-initiated explosive electron emission from flat germanium crystals

    Science.gov (United States)

    Porshyn, V.; Mingels, S.; Lützenkirchen-Hecht, D.; Müller, G.

    2016-07-01

    Flat Sb-doped germanium (100) crystals were investigated in the triode configuration under pulsed tunable laser illumination (pulse duration tlaser = 3.5 ns and photon energy hν = 0.54-5.90 eV) and under DC voltages 1 MW/cm2 corresponding to a high quantum efficiency up to 3.3% and cathode currents up to 417 A. This laser-induced explosive electron emission (EEE) from Ge was characterized by its voltage-, laser power- and hν-sensitivity. The analysis of the macroscopic surface damage caused by the EEE is included as well. Moreover, we have carried out first direct measurements of electron energy distributions produced during the EEE from the Ge samples. The measured electron spectra hint for electron excitations to the vacuum level of the bulk and emission from the plasma plume with an average kinetic energy of ˜0.8 eV.

  14. The impact of polishing on germanium-on-insulator substrates

    Institute of Scientific and Technical Information of China (English)

    Lin Wang; Ruan Yujiao; Chen Songyan; Li Cheng; Lai Hongkai; Huang Wei

    2013-01-01

    We prepared germanium-on-insulator (GOI) substrates by using Smart-CutTM and wafer bonding technology.The fabricated GOI is appropriate for polishing due to a strong bonding strength (2.4 MPa) and a sufficient bonding quality.We investigated mechanical polishing and chemical-mechanical polishing (CMP) systematically,and an appropriate polishing method-mechanical polishing combined with CMP-is obtained.As shown by AFM measurement,the RMS of GOI after polishing decreased to 0.543 nm.And the Ge peak profile of the XRD curve became symmetric,and the FWHM is about 121.7 arcsec,demonstrating a good crystal quality.

  15. Gamma ray polarimetry using a position sensitive germanium detector

    CERN Document Server

    Kroeger, R A; Kurfess, J D; Phlips, B F

    1999-01-01

    Imaging gamma-ray detectors make sensitive polarimeters in the Compton energy regime by measuring the scatter direction of gamma rays. The principle is to capitalize on the angular dependence of the Compton scattering cross section to polarized gamma rays and measure the distribution of scatter directions within the detector. This technique is effective in a double-sided germanium detector between roughly 50 keV and 1 MeV. This paper reviews device characteristics important to the optimization of a Compton polarimeter, and summarizes measurements we have made using a device with a 5x5 cm active area, 1 cm thickness, and strip-electrodes on a 2 mm pitch.

  16. Exceptional transport property in a rolled-up germanium tube

    Science.gov (United States)

    Guo, Qinglei; Wang, Gang; Chen, Da; Li, Gongjin; Huang, Gaoshan; Zhang, Miao; Wang, Xi; Mei, Yongfeng; Di, Zengfeng

    2017-03-01

    Tubular germanium (Ge) resistors are demonstrated by rolling-up thin Ge nanomembranes (NMs, 50 nm in thickness) with electrical contacts. The strain distribution of rolled-up Ge microtubes along the radial direction is investigated and predicted by utilizing micro-Raman scattering spectroscopy with two different excitation lasers. Electrical properties are characterized for both unreleased GeNMs and released/rolled-up Ge microtubes. The conductivities of GeNMs significantly decrease after rolling-up into tubular structures, which can be attributed to surface charging states on the conductance, band bending, and piezo-resistance effect. When illuminated with a light source, facilitated by the suppressed dark current of rolled-up Ge tubes, the corresponding signal-to-noise ratio can be dramatically enhanced compared with that of planar GeNMs.

  17. Wide band polarizer with suspended germanium resonant grating

    Institute of Scientific and Technical Information of China (English)

    Wugang Cao; Jianyong Ma; Changhe Zhou

    2012-01-01

    An ultra broad band polarizer that operates in the telecommunication wavelength band is proposed.This device,which consists of a single suspended germanium resonant grating layer,is designed using the inverse mathematical method and the rigorous vector diffraction theory.Calculated results indicate that the ultra broad band polarizer exhibits extremely high reflection (R > 99%) for TE polarization light and high transmission (T > 99%) for TM polarization at the wavelength range greater than 300 nm,and it has an extinction ratio of approximately 1 000 at the 1 550-nm central wavelength.The results of the rigorous coupled wave analysis indicate that the extremely wide band property of the TE polarization is caused by the excitation of strong modulation guided modes in the design wavelength range.

  18. Phosphorus diffusion in germanium following implantation and excimer laser annealing

    Science.gov (United States)

    Wang, Chen; Li, Cheng; Huang, Shihao; Lu, Weifang; Yan, Guangming; Zhang, Maotian; Wu, Huanda; Lin, Guangyang; Wei, Jiangbin; Huang, Wei; Lai, Hongkai; Chen, Songyan

    2014-05-01

    We focus our study on phosphorus diffusion in ion-implanted germanium after excimer laser annealing (ELA). An analytical model of laser annealing process is developed to predict the temperature profile and the melted depth in Ge. Based on the heat calculation of ELA, a phosphorus diffusion model has been proposed to predict the dopant profiles in Ge after ELA and fit SIMS profiles perfectly. A comparison between the current-voltage characteristics of Ge n+/p junctions formed by ELA at 250 mJ/cm2 and rapid thermal annealing at 650 °C for 15 s has been made, suggesting that ELA is promising for high performance Ge n+/p junctions.

  19. Anomalous compression behavior of germanium during phase transformation

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Xiaozhi [Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065 (China); Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203 (China); Tan, Dayong [Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203 (China); Guangzhou Institute of Geochemistry, Chinese Academic of Sciences, Guangzhou 510640 (China); Ren, Xiangting [Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203 (China); Yang, Wenge, E-mail: yangwg@hpstar.ac.cn, E-mail: duanweihe@scu.edu.cn [Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203 (China); High Pressure Synergetic Consortium (HPSynC), Geophysical Laboratory, Carnegie Institution of Washington, Argonne, Illinois 60439 (United States); He, Duanwei, E-mail: yangwg@hpstar.ac.cn, E-mail: duanweihe@scu.edu.cn [Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065 (China); Institute of Fluid Physics and National Key Laboratory of Shockwave and Detonation Physic, China Academy of Engineering Physics, Mianyang 621900 (China); Mao, Ho-Kwang [Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203 (China); High Pressure Synergetic Consortium (HPSynC), Geophysical Laboratory, Carnegie Institution of Washington, Argonne, Illinois 60439 (United States); Geophysical Laboratory, Carnegie Institution of Washington, Washington, DC 20015 (United States)

    2015-04-27

    In this article, we present the abnormal compression and plastic behavior of germanium during the pressure-induced cubic diamond to β-tin structure transition. Between 8.6 GPa and 13.8 GPa, in which pressure range both phases are co-existing, first softening and followed by hardening for both phases were observed via synchrotron x-ray diffraction and Raman spectroscopy. These unusual behaviors can be interpreted as the volume misfit between different phases. Following Eshelby, the strain energy density reaches the maximum in the middle of the transition zone, where the switch happens from softening to hardening. Insight into these mechanical properties during phase transformation is relevant for the understanding of plasticity and compressibility of crystal materials when different phases coexist during a phase transition.

  20. Oxygen-related point defects in silicon and germanium

    CERN Document Server

    Coutinho, J P A

    2001-01-01

    A modelling study of several oxygen related defects in silicon and germanium crystals is reported. These include radiation and thermally activated defects. The problem of thermal donor formation is revised in detail. Here we report the properties of the simple interstitial oxygen complexes, their diffusivity and clustering properties, culminating with a novel model for the thermal double donor defects (TDD). The model is also extended to the hydrogen-related shallow thermal donor family, STD(H). According to the model, electrons from over-coordinated oxygen atoms with a donor level lying above that of a stress-induced state, are transfered to the later. This picture is analogous to that of an externally doped quantum-dot.

  1. Towards monolithic integration of germanium light sources on silicon chips

    Science.gov (United States)

    Saito, Shinichi; Zaher Al-Attili, Abdelrahman; Oda, Katsuya; Ishikawa, Yasuhiko

    2016-04-01

    Germanium (Ge) is a group-IV indirect band gap semiconductor, and therefore bulk Ge cannot emit light efficiently. However, the direct band gap energy is close to the indirect one, and significant engineering efforts are being made to convert Ge into an efficient gain material monolithically integrated on a Si chip. In this article, we will review the engineering challenges of developing Ge light sources fabricated using nano-fabrication technologies compatible with complementary metal-oxide-semiconductor processes. In particular, we review recent progress in applying high-tensile strain to Ge to reduce the direct band gap. Another important technique is doping Ge with donor impurities to fill the indirect band gap valleys in the conduction band. Realization of carrier confinement structures and suitable optical cavities will be discussed. Finally, we will discuss possible applications of Ge light sources in potential photonics-electronics convergent systems.

  2. Band Anticrossing in Dilute Germanium Carbides Using Hybrid Density Functionals

    Science.gov (United States)

    Stephenson, Chad A.; O'brien, William A.; Qi, Meng; Penninger, Michael; Schneider, William F.; Wistey, Mark A.

    2016-04-01

    Dilute germanium carbides (Ge1- x C x ) offer a direct bandgap for compact silicon photonics, but widely varying properties have been reported. This work reports improved band structure calculations for Ge1- x C x using ab initio simulations that employ the HSE06 exchange-correlation density functional. Contrary to Vegard's law, the conduction band minimum at Γ is consistently found to decrease with increasing C content, while L and X valleys change much more slowly. The calculated Ge bandgap is within 11% of experimental values. A decrease in energy at the Γ conduction band valley of (170 meV ± 50)/%C is predicted, leading to a direct bandgap for x > 0.008. These results indicate a promising material for Group IV lasers.

  3. Contribution of a germanium detector in mobile gamma-ray spectrometry. Spectral analysis and performance

    CERN Document Server

    Gutierrez, S; Bourgeois, C

    2002-01-01

    The sensitivity of the germanium semi-conductor detector is 30 times lower than that of the sodium iodide (NaI) detectors frequently used in airborne spectrometry. Its energy resolution however, is 20 times better, giving more accurate identification of radionuclides, especially when complex spectra are involved. The use of the germanium detector in mobile gamma-ray spectrometry provides a large amount of qualitative and quantitative information. In post-accident situations a germanium detector will be sufficient, and should therefore be used in preference to a NaI detector. An algorithm for detecting the total absorption peaks by studying the variations in the spectral profile of germanium gamma-ray spectra has been developed at the CEA. The use of digital filters that take into account the characteristics of the absorption peaks reduces the statistical fluctuations, making possible detection based on the analysis of the first and second derivatives. The absorption peak is then estimated by subtracting the b...

  4. Thermal recrystallization of physical vapor deposition based germanium thin films on bulk silicon (100)

    KAUST Repository

    Hussain, Aftab M.

    2013-08-16

    We demonstrate a simple, low-cost, and scalable process for obtaining uniform, smooth surfaced, high quality mono-crystalline germanium (100) thin films on silicon (100). The germanium thin films were deposited on a silicon substrate using plasma-assisted sputtering based physical vapor deposition. They were crystallized by annealing at various temperatures ranging from 700 °C to 1100 °C. We report that the best quality germanium thin films are obtained above the melting point of germanium (937 °C), thus offering a method for in-situ Czochralski process. We show well-behaved high-κ /metal gate metal-oxide-semiconductor capacitors (MOSCAPs) using this film. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. A Low Noise 64x64 Germanium Array for Far IR Astronomy Project

    Data.gov (United States)

    National Aeronautics and Space Administration — We propose to investigate the feasibility of developing a 64x64 far infrared germanium focal-plane array with the following key design features: 1- Four...

  6. An Implant-Passivated Blocked Impurity Band Germanium Detector for the Far Infrared Project

    Data.gov (United States)

    National Aeronautics and Space Administration — We propose to fabricate a germanium blocked-impurity-band (BIB) detector using a novel process which will enable us to: 1- fabricate a suitably-doped active layer...

  7. An Implant-Passivated Blocked Impurity Band Germanium Detector for the Far Infrared Project

    Data.gov (United States)

    National Aeronautics and Space Administration — We propose to investigate the feasibility of fabricating a germanium blocked-impurity-band (BIB) detector using a novel process which will enable us to: 1- fabricate...

  8. Impurity distribution in high purity germanium crystal and its impact on the detector performance

    Science.gov (United States)

    Wang, Guojian; Amman, Mark; Mei, Hao; Mei, Dongming; Irmscher, Klaus; Guan, Yutong; Yang, Gang

    High-purity germanium crystals were grown in a hydrogen atmosphere using the Czochralski method. The axial and radial distributions of impurities in the crystals were measured by Hall effect and Photo-thermal ionization spectroscopy (PTIS). Amorphous semiconductor contacts were deposited on the germanium crystals to make detectors. Three planar detectors were fabricated from three crystals with different net carrier concentrations (1.7, 7.9 and 10x1010 cm-3). We evaluated the electrical and spectral performance of three detectors. Measurements of gamma-ray spectra from 137Cs, 241Am and 60Co sources demonstrate that the detectors have excellent energy resolution. The relationship between the impurities and detector's energy resolution was analyzed. Keywords: High-purity germanium crystal, High-purity germanium detector This work is supported by DOE grant DE-FG02-10ER46709 and the state of South Dakota..

  9. Electronic and magnetic properties of Fe and Mn doped two dimensional hexagonal germanium sheets

    Energy Technology Data Exchange (ETDEWEB)

    Soni, Himadri R., E-mail: himadri.soni@gmail.com; Jha, Prafulla K., E-mail: himadri.soni@gmail.com [Department of Physics, Maharaja Krishnakumarsinhji Bhavnagar University, Bhavnagar-364001 (India)

    2014-04-24

    Using first principles density functional theory calculations, the present paper reports systematic total energy calculations of the electronic properties such as density of states and magnetic moment of pristine and iron and manganese doped two dimensional hexagonal germanium sheets.

  10. Research progress of Si-based germanium materials and devices

    Science.gov (United States)

    Buwen, Cheng; Cheng, Li; Zhi, Liu; Chunlai, Xue

    2016-08-01

    Si-based germanium is considered to be a promising platform for the integration of electronic and photonic devices due to its high carrier mobility, good optical properties, and compatibility with Si CMOS technology. However, some great challenges have to be confronted, such as: (1) the nature of indirect band gap of Ge; (2) the epitaxy of dislocation-free Ge layers on Si substrate; and (3) the immature technology for Ge devices. The aim of this paper is to give a review of the recent progress made in the field of epitaxy and optical properties of Ge heterostructures on Si substrate, as well as some key technologies on Ge devices. High crystal quality Ge epilayers, as well as Ge/SiGe multiple quantum wells with high Ge content, were successfully grown on Si substrate with a low-temperature Ge buffer layer. A local Ge condensation technique was proposed to prepare germanium-on-insulator (GOI) materials with high tensile strain for enhanced Ge direct band photoluminescence. The advances in formation of Ge n+p shallow junctions and the modulation of Schottky barrier height of metal/Ge contacts were a significant progress in Ge technology. Finally, the progress of Si-based Ge light emitters, photodetectors, and MOSFETs was briefly introduced. These results show that Si-based Ge heterostructure materials are promising for use in the next-generation of integrated circuits and optoelectronic circuits. Project supported in part by the National Natural Science Foundation (Nos. 61036003, 61435013) and the Major State Basic Research Development Program of China (No. 2013CB632103).

  11. Sensitivity comparison of intrinsic germanium detectors with various efficiencies

    Energy Technology Data Exchange (ETDEWEB)

    Buker, L.M.L.

    1990-12-01

    Scientists today are being asked to measure concentrations of radionuclides at increasingly lower levels. This creates a demand for better resolution detectors with larger efficiencies that can provide the necessary sensitivity to accurately determine low levels of radioactivity. This study has acquired a large volume of empirical data for a wide range of relative efficiency germanium detectors. The purpose was to determine the sensitivity of various efficiency high-purity (P-type) germanium detectors produced by a single manufacturer. Selecting efficiency as the only variable and essentially all other variables remaining constant narrowed the field of detectors to 30. This investigation compares the response for the lower limit of detection (LLD), figure-of-merit (FOM), and minimum detectable activity (MDA) versus efficiency. In addition to the efficiency, the resolution, background, peak-to-Compton (P/C), and crystal shape of a p-type detector are of particular importance when considering the parameters of a detectors performance. A concise summary of the results is that the detector of choice for low energy measurements would be a 25% detector with resolution better than 1.8 keV FWHM for the 1.332 keV energy of Co-60. The detector of choice for energy levels greater than 500 keV would be a high efficiency low background detector. If the entire energy range is of interest, then a 70% low background detector with a high P/C and a resolution better than 1.9 keV would yield the lowest MDA and assure the most efficient counting times. 9 refs., 25 figs., 6 tabs.

  12. Radiation-electromagnetic effect in germanium single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Kikoin, I.K.; Kikoin, L.I.; Lazarev, S.D.

    1980-10-01

    An experimental study was made of the radiation-electromagnetic effect in germanium single crystals when excess carriers were generated by bombardment with ..cap alpha.. particles, protons, or x rays in magnetic fields up to 8 kOe. The source of ..cap alpha.. particles and protons was a cyclotron and x rays were provided by a tube with a copper anode. The radiation-electromagnetic emf increased linearly on increase in the magnetic field and was directly proportional to the flux of charged particles at low values of the flux, reaching saturation at high values of the flux (approx.5 x 10/sup 11/ particles .cm/sup -2/ .sec/sup -1/). In the energy range 4--40 MeV the emf was practically independent of the ..cap alpha..-particle energy. The sign of the emf was reversed when samples with a ground front surface were irradiated. Measurements of the photoelectromagnetic and Hall effects in the ..cap alpha..-particle-irradiated samples showed that a p-n junction was produced by these particles and its presence should be allowed for in investigations of the radiation-electromagnetic effect. The measured even radiation-electromagnetic emf increased quadratically on increase in the magnetic field. An investigation was made of the barrier radiation-voltaic effect (when the emf was measured between the irradiated and unirradiated surfaces). Special masks were used to produce a set of consecutive p-n junctions in germanium crystals irradiated with ..cap alpha.. particles. A study of the photovoltaic and photoelectromagnetic effects in such samples showed that the method could be used to increase the efficiency of devices utilizing the photoelectromagnetic effect.

  13. Development of silicon-germanium visible-near infrared arrays

    Science.gov (United States)

    Zeller, John W.; Rouse, Caitlin; Efstathiadis, Harry; Haldar, Pradeep; Lewis, Jay S.; Dhar, Nibir K.; Wijewarnasuriya, Priyalal; Puri, Yash R.; Sood, Ashok K.

    2016-05-01

    Photodetectors based on germanium which do not require cooling and can provide good near-infrared (NIR) detection performance offer a low-cost alternative to conventional infrared sensors based on material systems such as InGaAs, InSb, and HgCdTe. As a result of the significant difference in thermal expansion coefficients between germanium and silicon, tensile strain incorporated into Ge epitaxial layers deposited on Si utilizing specialized growth processes can extend the operational range of detection to 1600 nm and longer wavelengths. We have fabricated Ge based PIN photodetectors on 300 mm diameter Si wafers to take advantage of high throughput, large-area complementary metal-oxide semiconductor (CMOS) technology. This device fabrication process involves low temperature epitaxial deposition of Ge to form a thin p+ (boron) Ge seed/buffer layer, and subsequent higher temperature deposition of a thicker Ge intrinsic layer. This is followed by selective ion implantation of phosphorus of various concentrations to form n+ Ge regions, deposition of a passivating oxide cap, and then top copper contacts to complete the PIN detector devices. Various techniques including transmission electron microscopy (TEM) and secondary ion mass spectrometry (SIMS) have been employed to characterize the material and structural properties of the epitaxially grown layers and fabricated detector devices, and these results are presented. The I-V response of the photodetector devices with and without illumination was also measured, for which the Ge based photodetectors consistently exhibited low dark currents of around ~1 nA at -1 V bias.

  14. Germanium under high tensile stress: nonlinear dependence of direct band gap vs. strain

    OpenAIRE

    Guilloy, K.; Pauc, N.; Gassenq, A.; Niquet, Y. M.; Escalante, J. M.; Duchemin, I.; Tardif, S; Dias, G. Osvaldo; Rouchon, D.; Widiez, J.; Hartmann, J.M.; Geiger, R.; Zabel, T.; Sigg, H; Faist, J.

    2016-01-01

    Germanium is a strong candidate as a laser source for silicon photonics. It is widely accepted that the band structure of germanium can be altered by tensile strain so as to reduce the energy difference between its direct and indirect band gaps. However, the conventional deformation potential model most widely adopted to describe this transformation happens to have been investigated only up to 1 % uniaxially loaded strains. In this work, we use a micro-bridge geometry to uniaxially stress ger...

  15. Determination of Shear Deformation Potentials from the Free-Carrier Piezobirefringence in Germanium and Silicon

    DEFF Research Database (Denmark)

    Riskaer, Sven

    1966-01-01

    The present investigations of the free-carrier piezobirefringence phenomenon verify that in n-type germanium and silicon as well as in p-type silicon this effect can be ascribed to intraband transitions of the carriers. It is demonstrated how a combined investigation of the low-stress and high-st......, experimental evidence is given to support the assumption, that in p-type germanium intraband transitions alone cannot account for the free-carrier piezobirefringence....

  16. Angled stripe superluminescent diode

    Energy Technology Data Exchange (ETDEWEB)

    Figueroa, L.; Morrison, C.B.; Zinkiewicz, L.M.; Niesen, J.W.

    1989-08-08

    This patent describes a superluminescent light-emitting diode device having high power output and high spectral bandwidth. The device comprising: a semiconductor structure including at least one channel region formed in a semiconductor substrate and filled with a first semiconductor cladding layer of material having a higher index of refraction than substrate material outside the channel region, to provide lateral index-guiding of light within the channel region. The semiconductor structure also including a second semiconductor cladding layer of opposite conductivity type to the first, an active semiconductor layer at a junction between the first and second semiconductor cladding layers, and at least one emitting facet formed at a channel end; means for applying an electrical forward-bias voltage across the junction to produce emission of light; and wherein the channel is slightly inclined to a direction normal to the facet, to suppress lasing within the device, which can then operated at high powers and a broad spectral width.

  17. Optical properties of Germanium nanoparticles synthesized by pulsed laser ablation in acetone

    Directory of Open Access Journals (Sweden)

    Saikiran eVadavalli

    2014-10-01

    Full Text Available Germanium (Ge nanoparticles (NPs are synthesized by means of pulsed laser ablation of bulk germanium target immersed in acetone with ns laser pulses at different pulse energies. The fabricated NPs are characterized by employing different techniques such as UV-visible absorption spectroscopy, photoluminescence, micro-Raman spectroscopy, transmission electron microscopy (TEM and field emission scanning electron microscopy (FESEM. The mean size of the Ge NPs is found to vary from few nm to 40 nm with the increase in laser pulse energy. Shift in the position of the absorption spectra is observed and also the photoluminescence peak shift is observed due to quantum confinement effects. High resolution TEM combined with micro-Raman spectroscopy confirms the crystalline nature of the generated germanium nanoparticles. The formation of various sizes of germanium NPs at different laser pulse energies is evident from the asymmetry in the Raman spectra and the shift in its peak position towards the lower wavenumber side. The FESEM micrographs confirm the formation of germanium micro/nanostructures at the laser ablated position of the bulk germanium. In particular, the measured NP sizes from the micro-Raman phonon quantum confinement model are found in good agreement with TEM measurements of Ge NPs.

  18. The Effects of Germanium Biotite Supplement as a Prophylactic Agent against Respiratory Infection in Calves

    Directory of Open Access Journals (Sweden)

    Myunghwan Jung1, Bock-Gie Jung2, Seung Bin Cha1, Min-Kyoung Shin1, Won-Jung Lee1, Seung Won Shin1, Jin-A Lee2, Yeon-Kwon Jung3, Bong-Joo Lee2 and Han Sang Yoo1*

    2012-06-01

    Full Text Available Germanium biotite, a natural mineral, is comprised of mainly silicate. This mineral showed activities of increase in feed efficiency and non-specific immunostimulation in previous studies. The aims of the present study were to evaluate the prophylactic effects of germanium biotite against respiratory diseases in calves as a feed supplement and investigate the possibilities of the substitution of antibiotics with germanium biotite as feed additive. To achieve these purposes, bovine herpesvirus-1 (BHV-1 and Mannheimia haemolytica serotype A1 were experimentally inoculated into the calves. After challenge, germanium biotite showed a lower cumulative clinical score (CCS than the control group. In accordance with these clinical results, enhanced clearance of BHV-1, a low infection rate of Mannheimia haemolytica serotype A1, tempered superficial lesions, and moderated histopathological signs were observed in the germanium biotite group, compared with the control group. The results of the present study indicated that germanium biotite had prophylactic effects against bovine respiratory disease and could be a candidate for a new alternative feed supplement in calves, through its effects as a non-specific immune stimulator.

  19. The Role of the Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) in Mobile Technology Platforms

    Science.gov (United States)

    2011-09-01

    The Role of the Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) in Mobile Technology Platforms by Gregory A. Mitchell...Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) in Mobile Technology Platforms 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM ELEMENT...MD 20783-1197 ARL-TN-0459 September 2011 The Role of the Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) in Mobile

  20. Diode-pumped dye laser

    Science.gov (United States)

    Burdukova, O. A.; Gorbunkov, M. V.; Petukhov, V. A.; Semenov, M. A.

    2016-10-01

    This letter reports diode pumping for dye lasers. We offer a pulsed dye laser with an astigmatism-compensated three-mirror cavity and side pumping by blue laser diodes with 200 ns pulse duration. Eight dyes were tested. Four dyes provided a slope efficiency of more than 10% and the highest slope efficiency (18%) was obtained for laser dye Coumarin 540A in benzyl alcohol.

  1. Light Emitting Diodes (LEDs)

    Science.gov (United States)

    1997-01-01

    A special lighting technology was developed for space-based commercial plant growth research on NASA's Space Shuttle. Surgeons have used this technology to treat brain cancer on Earth, in two successful operations. The treatment technique, called Photodynamic Therapy, requires the surgeon to use tiny, pinhead-size Light Emitting Diodes (LEDs) (a source that releases long wavelengths of light ) to activate light-sensitive, tumor-treating drugs. 'A young woman operated on in May 1999 has fully recovered with no complications and no evidence of the tumor coming back,' said Dr. Harry Whelan, a pediatric neurologist at the Medical Hospital of Wisconsin in Milwaukee. Laser light has been used for this type of surgery in the past, but the LED light illuminates through all nearby tissues, reaching parts of a tumor that shorter wavelengths of laser light carnot. The new probe is safer because the longer wavelengths of light are cooler than the shorter wavelengths of laser light, making the LED less likely to injure normal brain tissue near the tumor. It can be used for hours at a time while still remaining cool to the touch. The LED light source is compact, about the size of a briefcase, and can be purchased for a fraction of the cost of a laser. The LEDs, developed and managed by NASA's Marshall Space Flight Center, have been used on seven Space Shuttle flights inside the Microgravity Astroculture Facility. This technology has also been successfully used to further commercial research in crop growth.

  2. Ion beam induced stress formation and relaxation in germanium

    Energy Technology Data Exchange (ETDEWEB)

    Steinbach, T., E-mail: Tobias.Steinbach@uni-jena.de [Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743 Jena (Germany); Reupert, A.; Schmidt, E.; Wesch, W. [Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743 Jena (Germany)

    2013-07-15

    Ion irradiation of crystalline solids leads not only to defect formation and amorphization but also to mechanical stress. In the past, many investigations in various materials were performed focusing on the ion beam induced damage formation but only several experiments were done to investigate the ion beam induced stress evolution. Especially in microelectronic devices, mechanical stress leads to several unwanted effects like cracking and peeling of surface layers as well as changing physical properties and anomalous diffusion of dopants. To study the stress formation and relaxation process in semiconductors, crystalline and amorphous germanium samples were irradiated with 3 MeV iodine ions at different ion fluence rates. The irradiation induced stress evolution was measured in situ with a laser reflection technique as a function of ion fluence, whereas the damage formation was investigated by means of Rutherford backscattering spectrometry. The investigations show that mechanical stress builds up at low ion fluences as a direct consequence of ion beam induced point defect formation. However, further ion irradiation causes a stress relaxation which is attributed to the accumulation of point defects and therefore the creation of amorphous regions. A constant stress state is reached at high ion fluences if a homogeneous amorphous surface layer was formed and no further ion beam induced phase transition took place. Based on the results, we can conclude that the ion beam induced stress evolution seems to be mainly dominated by the creation and accumulation of irradiation induced structural modification.

  3. Improved constraints on WIMPs from the International Germanium Experiment IGEX

    CERN Document Server

    Morales, A; Brodzinski, R L; Cebrián, S; García, E; Irastorza, I G; Kirpichnikov, I V; Klimenko, A A; Miley, H S; Morales, J; De Solorzano, A O; Osetrov, S B; Pogosov, V S; Puimedón, J; Reeves, J H; Sarsa, M L; Smolnikov, A A; Tamanyan, A G; Vasenko, A A; Vasilev, S I; Villar, J A

    2002-01-01

    One IGEX 76Ge double-beta decay detector is currently operating in the Canfranc Underground Laboratory in a search for dark matter WIMPs, through the Ge nuclear recoil produced by the WIMP elastic scattering. A new exclusion plot, has been derived for WIMP-nucleon spin-independent interactions. To obtain this result, 40 days of data from the IGEX detector (energy threshold E \\~ 4 keV), recently collected, have been analyzed. These data improve the exclusion limits derived from all the other ionization germanium detectors in the mass region from 20 GeV to 200 GeV, where a WIMP supposedly responsible for the annual modulation effect reported by the DAMA experiment would be located. The new IGEX exclusion contour enters, by the first time, the DAMA region by using only raw data, with no background discrimination, and excludes its upper left part. It is also shown that with a moderate improvement of the detector performances, the DAMA region could be fully explored.

  4. Radium needle used to calibrate germanium gamma-ray detector.

    Science.gov (United States)

    Kamboj, S; Lovett, D; Kahn, B; Walker, D

    1993-03-01

    A standard platinum-iridium needle that contains 374 MBq 226Ra was tested as a source for calibrating a portable germanium detector used with a gamma-ray spectrometer for environmental radioactivity measurements. The counting efficiencies of the 11 most intense gamma rays emitted by 226Ra and its short-lived radioactive progeny at energies between 186 and 2,448 keV were determined, at the full energy peaks, to construct a curve of counting efficiency vs. energy. The curve was compared to another curve between 43 and 1,596 keV obtained with a NIST mixed-radionuclide standard. It was also compared to the results of a Monte Carlo simulation. The 226Ra source results were consistent with the NIST standard between 248 and 1,596 keV. The Monte Carlo simulation gave a curve parallel to the curve for the combined radium and NIST standard data between 250 and 2,000 keV, but at higher efficiency.

  5. Inverting polar domains via electrical pulsing in metallic germanium telluride

    Science.gov (United States)

    Nukala, Pavan; Ren, Mingliang; Agarwal, Rahul; Berger, Jacob; Liu, Gerui; Johnson, A. T. Charlie; Agarwal, Ritesh

    2017-04-01

    Germanium telluride (GeTe) is both polar and metallic, an unusual combination of properties in any material system. The large concentration of free-carriers in GeTe precludes the coupling of external electric field with internal polarization, rendering it ineffective for conventional ferroelectric applications and polarization switching. Here we investigate alternate ways of coupling the polar domains in GeTe to external electrical stimuli through optical second harmonic generation polarimetry and in situ TEM electrical testing on single-crystalline GeTe nanowires. We show that anti-phase boundaries, created from current pulses (heat shocks), invert the polarization of selective domains resulting in reorganization of certain 71o domain boundaries into 109o boundaries. These boundaries subsequently interact and evolve with the partial dislocations, which migrate from domain to domain with the carrier-wind force (electrical current). This work suggests that current pulses and carrier-wind force could be external stimuli for domain engineering in ferroelectrics with significant current leakage.

  6. Neutron damage tests of a highly segmented germanium crystal

    Energy Technology Data Exchange (ETDEWEB)

    Ross, T.J. [Physics Department, University of Richmond, Richmond, VA 23173 (United States); Physics Department, University of Surrey, Guildford GU2 7JL (United Kingdom); Beausang, C.W. [Physics Department, University of Richmond, Richmond, VA 23173 (United States)], E-mail: cbeausan@richmond.edu; Lee, I.Y.; Macchiavelli, A.O.; Gros, S.; Cromaz, M.; Clark, R.M.; Fallon, P.; Jeppesen, H. [Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Allmond, J.M. [Physics Department, University of Richmond, Richmond, VA 23173 (United States)

    2009-07-21

    To evaluate the effect of neutron damage on the performance of highly segmented germanium detectors the P3 prototype detector for the GRETINA array was subjected to a neutron flux of {approx}3x10{sup 9} n/cm{sup 2} over a period of 5 days. During the irradiation, the resolution (full-width half-maximum (FWHM)) of the 1332 keV {sup 60}Co photopeak increased from {approx}1.8 to {approx}6.0 keV while the full-width at tenth maximum (FWTM) increased from {approx}4 keV to more than 12 keV. Following the irradiation the detector was successfully annealed and the energy resolution returned to pre-irradiation values. All detector segments were fully functional before and after the annealing and following multiple room-temperature cycles. A comparison of digitized pulse shapes in the damaged and annealed detector indicates that the effect of extreme neutron damage (FWHM=6 keV) on the position resolution is on the order of {approx}1.7 mm while for 3 keV resolution the position resolution degrades by {approx}0.5 mm.

  7. Environmental Radioactivity: Gamma Ray Spectroscopy with Germanium detector

    Science.gov (United States)

    Vyas, Gargi; Beausang, Cornelius; Hughes, Richard; Tarlow, Thomas; Gell, Kristen; University of Richmond Physics Team

    2013-10-01

    A CF-1000BRL series portable Air Particle Sampler with filter paper as filter media was placed in one indoor and one outdoor location at 100 LPM flow rate on six dates under alternating rainy and warm weather conditions over the course of sixteen days in May 2013. The machine running times spanned between 6 to 69 hours. Each filter paper was then put in a germanium gamma ray detector, and the counts ranged from 93000 to 250000 seconds. The spectra obtained were analyzed by the CANBERRA Genie 2000 software, corrected using a background spectrum, and calibrated using a 20.27 kBq activity multi-nuclide source. We graphed the corrected counts (from detector analysis time)/second (from air sampler running time)/liter (from the air sampler's flow rate) of sharp, significantly big peaks corresponding to a nuclide in every sample against the sample number along with error bars. The graphs were then used to compare the samples and they showed a similar trend. The slight differences were usually due to the different running times of the air sampler. The graphs of about 22 nuclides were analyzed. We also tried to recognize the nuclei to which several gamma rays belonged that were displayed but not recognized by the Genie 2000 software.

  8. Inverting polar domains via electrical pulsing in metallic germanium telluride

    Science.gov (United States)

    Nukala, Pavan; Ren, Mingliang; Agarwal, Rahul; Berger, Jacob; Liu, Gerui; Johnson, A. T. Charlie; Agarwal, Ritesh

    2017-01-01

    Germanium telluride (GeTe) is both polar and metallic, an unusual combination of properties in any material system. The large concentration of free-carriers in GeTe precludes the coupling of external electric field with internal polarization, rendering it ineffective for conventional ferroelectric applications and polarization switching. Here we investigate alternate ways of coupling the polar domains in GeTe to external electrical stimuli through optical second harmonic generation polarimetry and in situ TEM electrical testing on single-crystalline GeTe nanowires. We show that anti-phase boundaries, created from current pulses (heat shocks), invert the polarization of selective domains resulting in reorganization of certain 71o domain boundaries into 109o boundaries. These boundaries subsequently interact and evolve with the partial dislocations, which migrate from domain to domain with the carrier-wind force (electrical current). This work suggests that current pulses and carrier-wind force could be external stimuli for domain engineering in ferroelectrics with significant current leakage. PMID:28401949

  9. Experimental germanium dioxide-induced neuropathy in rats.

    Science.gov (United States)

    Matsumuro, K; Izumo, S; Higuchi, I; Ronquillo, A T; Takahashi, K; Osame, M

    1993-01-01

    We report an experimental model of germanium dioxide (GeO2)-induced neuropathy in rats. More than 6 months administration of GeO2 to young rats produced neuropathy characterized by segmental demyelination/remyelination and nerve edema. Electron microscopic studies demonstrated that changes in Schwann cells, such as an increased cytoplasmic volume or disintegration of the cytoplasm, were the earliest pathological findings. Schwann cell mitochondria contained high electron-dense materials. Subsequent removal of necrotic Schwann cell debris and myelin by invading macrophages was evident. These findings suggested that the Schwann cells themselves are the primary target of the toxin. The deposition of electron-dense granules in the intra-axonal vesicles, which was suggestive of glycogen granules in mitochondria, was observed in the advanced stage of the neuropathy. The findings of endoneurial edema with splitting of myelin lamellae were noted at the early stage of demyelination. Nerve edema may be the result of GeO2-induced endothelial cell injury.

  10. Etching of germanium-tin using ammonia peroxide mixture

    Energy Technology Data Exchange (ETDEWEB)

    Dong, Yuan; Ong, Bin Leong; Wang, Wei; Gong, Xiao; Liang, Gengchiau; Yeo, Yee-Chia, E-mail: yeo@ieee.org [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore); Zhang, Zheng; Pan, Jisheng [Institute of Material Research and Engineering, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, #08-03, Innovis, Singapore 138634 (Singapore); Tok, Eng-Soon [Department of Physics, National University of Singapore, Singapore 117551 (Singapore)

    2015-12-28

    The wet etching of germanium-tin (Ge{sub 1-x}Sn{sub x}) alloys (4.2% < x < 16.0%) in ammonia peroxide mixture (APM) is investigated. Empirical fitting of the data points indicates that the etch depth of Ge{sub 1-x}Sn{sub x} is proportional to the square root of the etch time t and decreases exponentially with increasing x for a given t. In addition, X-ray photoelectron spectroscopy results show that increasing t increases the intensity of the Sn oxide peak, whereas no obvious change is observed for the Ge oxide peak. This indicates that an accumulation of Sn oxide on the Ge{sub 1-x}Sn{sub x} surface decreases the amount of Ge atoms exposed to the etchant, which accounts for the decrease in etch rate with increasing etch time. Atomic force microscopy was used to examine the surface morphologies of the Ge{sub 0.918}Sn{sub 0.082} samples. Both root-mean-square roughness and undulation periods of the Ge{sub 1-x}Sn{sub x} surface were observed to increase with increasing t. This work provides further understanding of the wet etching of Ge{sub 1-x}Sn{sub x} using APM and may be used for the fabrication of Ge{sub 1-x}Sn{sub x}-based electronic and photonic devices.

  11. Techniques to distinguish between electron and photon induced events using segmented germanium detectors

    Energy Technology Data Exchange (ETDEWEB)

    Kroeninger, K.

    2007-06-05

    Two techniques to distinguish between electron and photon induced events in germanium detectors were studied: (1) anti-coincidence requirements between the segments of segmented germanium detectors and (2) the analysis of the time structure of the detector response. An 18-fold segmented germanium prototype detector for the GERDA neutrinoless double beta-decay experiment was characterized. The rejection of photon induced events was measured for the strongest lines in {sup 60}Co, {sup 152}Eu and {sup 228}Th. An accompanying Monte Carlo simulation was performed and the results were compared to data. An overall agreement with deviations of the order of 5-10% was obtained. The expected background index of the GERDA experiment was estimated. The sensitivity of the GERDA experiment was determined. Special statistical tools were developed to correctly treat the small number of events expected. The GERDA experiment uses a cryogenic liquid as the operational medium for the germanium detectors. It was shown that germanium detectors can be reliably operated through several cooling cycles. (orig.)

  12. Biallelic and Genome Wide Association Mapping of Germanium Tolerant Loci in Rice (Oryza sativa L..

    Directory of Open Access Journals (Sweden)

    Partha Talukdar

    Full Text Available Rice plants accumulate high concentrations of silicon. Silicon has been shown to be involved in plant growth, high yield, and mitigating biotic and abiotic stresses. However, it has been demonstrated that inorganic arsenic is taken up by rice through silicon transporters under anaerobic conditions, thus the ability to efficiently take up silicon may be considered either a positive or a negative trait in rice. Germanium is an analogue of silicon that produces brown lesions in shoots and leaves, and germanium toxicity has been used to identify mutants in silicon and arsenic transport. In this study, two different genetic mapping methods were performed to determine the loci involved in germanium sensitivity in rice. Genetic mapping in the biparental cross of Bala × Azucena (an F6 population and a genome wide association (GWA study with 350 accessions from the Rice Diversity Panel 1 were conducted using 15 μM of germanic acid. This identified a number of germanium sensitive loci: some co-localised with previously identified quantitative trait loci (QTL for tissue silicon or arsenic concentration, none co-localised with Lsi1 or Lsi6, while one single nucleotide polymorphism (SNP was detected within 200 kb of Lsi2 (these are genes known to transport silicon, whose identity was discovered using germanium toxicity. However, examining candidate genes that are within the genomic region of the loci detected above reveals genes homologous to both Lsi1 and Lsi2, as well as a number of other candidate genes, which are discussed.

  13. A-centers and isovalent impurities in germanium: Density functional theory calculations

    Energy Technology Data Exchange (ETDEWEB)

    Chroneos, A., E-mail: alexander.chroneos@imperial.ac.uk [Department of Materials, Imperial College London, London SW7 2BP (United Kingdom); Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB2 3QZ (United Kingdom); Londos, C.A. [University of Athens, Solid State Physics Section, Panepistimiopolis Zografos, Athens 157 84 (Greece); Bracht, H. [Institute of Materials Physics, University of Muenster, Wilhelm-Klemm-Strasse 10, D-48149 Muenster (Germany)

    2011-03-25

    In the present study density functional theory calculations have been used to calculate the binding energies of clusters formed between lattice vacancies, oxygen and isovalent atoms in germanium. In particular we concentrated on the prediction of binding energies of A-centers or oxygen interstitials that are at nearest and next nearest neighbor sites to isovalent impurities (carbon, silicon and tin) in germanium. The A-center is an oxygen interstitial atom near a lattice vacancy and is an important impurity-defect pair in germanium. In germanium doped with carbon or silicon, we calculated that most of the binding energy of the cluster formed between A-centers and the carbon or silicon atoms is due to the interaction between the oxygen interstitial atom and the carbon or silicon atoms. For tin-doped germanium most of the binding energy is due to the interaction of the oversized tin atom and the lattice vacancy, which essentially provide space for tin to relax. The nearest neighbor carbon-oxygen interstitial and the silicon-oxygen interstitial pairs are significantly bound, whereas the tin-oxygen interstitial pairs are not. The results are discussed in view of analogous investigations in isovalently doped silicon.

  14. Laser Diode Beam Basics, Manipulations and Characterizations

    CERN Document Server

    Sun, Haiyin

    2012-01-01

    Many optical design technical books are available for many years which mainly deal with image optics design based on geometric optics and using sequential raytracing technique. Some books slightly touched laser beam manipulation optics design. On the other hand many books on laser diodes have been published that extensively deal with laser diode physics with little touching on laser diode beam manipulations and characterizations. There are some internet resources dealing with laser diode beams. However, these internet resources have not covered enough materials with enough details on laser diode beam manipulations and characterizations. A technical book concentrated on laser diode beam manipulations and characterizations can fit in to the open and provide useful information to laser diode users. Laser Diode Beam Basics, Manipulations and  Characterizations is concentrated on the very practical side of the subject, it only discusses the basic physics and mathematics that are necessary for the readers in order...

  15. Germanium anode with excellent lithium storage performance in a germanium/lithium-cobalt oxide lithium-ion battery.

    Science.gov (United States)

    Li, Xiuwan; Yang, Zhibo; Fu, Yujun; Qiao, Li; Li, Dan; Yue, Hongwei; He, Deyan

    2015-02-24

    Germanium is a highly promising anode material for lithium-ion batteries as a consequence of its large theoretical specific capacity, good electrical conductivity, and fast lithium ion diffusivity. In this work, Co3O4 nanowire array fabricated on nickel foam was designed as a nanostructured current collector for Ge anode. By limiting the voltage cutoff window in an appropriate range, the obtained Ge anode exhibits excellent lithium storage performance in half- and full-cells, which can be mainly attributed to the designed nanostructured current collector with good conductivity, enough buffering space for the volume change, and shortened ionic transport length. More importantly, the assembled Ge/LiCoO2 full-cell shows a high energy density of 475 Wh/kg and a high power density of 6587 W/kg. A high capacity of 1184 mA h g(-1) for Ge anode was maintained at a current density of 5000 mA g(-1) after 150 cycles.

  16. Few-photon optical diode

    CERN Document Server

    Roy, Dibyendu

    2010-01-01

    We propose a novel scheme of realizing an optical diode at the few-photon level. The system consists of a one-dimensional waveguide coupled asymmetrically to a two-level system. The two or multi-photon transport in this system is strongly correlated. We derive exactly the single and two-photon current and show that the two-photon current is asymmetric for the asymmetric coupling. Thus the system serves as an optical diode which allows transmission of photons in one direction much more efficiently than the opposite.

  17. Few-photon optical diode

    OpenAIRE

    Roy, Dibyendu

    2010-01-01

    We propose a novel scheme of realizing an optical diode at the few-photon level. The system consists of a one-dimensional waveguide coupled asymmetrically to a two-level system. The two or multi-photon transport in this system is strongly correlated. We derive exactly the single and two-photon current and show that the two-photon current is asymmetric for the asymmetric coupling. Thus the system serves as an optical diode which allows transmission of photons in one direction much more efficie...

  18. Few-photon optical diode

    OpenAIRE

    Roy, Dibyendu

    2010-01-01

    We propose a novel scheme of realizing an optical diode at the few-photon level. The system consists of a one-dimensional waveguide coupled asymmetrically to a two-level system. The two or multi-photon transport in this system is strongly correlated. We derive exactly the single and two-photon current and show that the two-photon current is asymmetric for the asymmetric coupling. Thus the system serves as an optical diode which allows transmission of photons in one direction much more efficie...

  19. Scaling of nano-Schottky-diodes

    NARCIS (Netherlands)

    Smit, G.D.J.; Rogge, S.; Klapwijk, T.M.

    2002-01-01

    A generally applicable model is presented to describe the potential barrier shape in ultrasmall Schottky diodes. It is shown that for diodes smaller than a characteristic length lc (associated with the semiconductor doping level) the conventional description no longer holds. For such small diodes th

  20. Impurity diffusion, point defect engineering, and surface/interface passivation in germanium

    KAUST Repository

    Chroneos, Alexander I.

    2012-01-26

    In recent years germanium has been emerging as a mainstream material that could have important applications in the microelectronics industry. The principle aim of this study is to review investigations of the diffusion of technologically important p- and n-type dopants as well as surface and interface passivation issues in germanium. The diffusion of impurities in germanium is interrelated to the formation of clusters whenever possible, and possibilities for point defect engineering are discussed in view of recent results. The importance of electrically active defects on the Ge surface and interfaces is addressed considering strategies to suppress them and to passivate the surfaces/interfaces, bearing in mind their importance for advanced devices. © 2012 by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. The MAJORANA DEMONSTRATOR: A Search for Neutrinoless Double-beta Decay of Germanium-76

    CERN Document Server

    Schubert, A G; Avignone, F T; Back, H O; Barabash, A S; Bergevin, M; Bertrand, F E; Boswell, M; Brudanin, V; Busch, M; Chan, Y-D; Christofferson, C D; Collar, J I; Combs, D C; Cooper, R J; Detwiler, J A; Leon, J; Doe, P J; Efremenko, Yu; Egorov, V; Ejiri, H; Elliott, S R; Esterline, J; Fast, J E; Fields, N; Finnerty, P; Fraenkle, F M; Gehman, V M; Giovanetti, G K; Green, M P; Guiseppe, V E; Gusey, K; Hallin, A L; Hazama, R; Henning, R; Hime, A; Hoppe, E W; Horton, M; Howard, S; Howe, M A; Johnson, R A; Keeter, K J; Keillor, M E; Keller, C; Kephart, J D; Kidd, M F; Knecht, A; Kochetov, O; Konovalov, S I; Kouzes, R T; LaFerriere, B; LaRoque, B H; Leviner, L E; Loach, J C; MacMullin, S; Marino, M G; Martin, R D; Mei, D -M; Merriman, J; Miller, M L; Mizouni, L; Nomachi, M; Orrell, J L; Overman, N; Phillips, D G; Poon, A W P; Perumpilly, G; Prior, G; Radford, D C; Rielage, K; Robertson, R G H; Ronquest, M C; Shima, T; Shirchenko, M; Snavely, K J; Sobolev, V; Steele, D; Strain, J; Thomas, K; Timkin, V; Tornow, W; Vanyushin, I; Varner, R L; Vetter, K; Vorren, K; Wilkerson, J F; Wolfe, B A; Yakushev, E; Young, A R; Yu, C ?H; Yumatov, V; Zhan, C

    2011-01-01

    The observation of neutrinoless double-beta decay would determine whether the neutrino is a Majorana particle and provide information on the absolute scale of neutrino mass. The MAJORANA Collaboration is constructing the DEMONSTRATOR, an array of germanium detectors, to search for neutrinoless double-beta decay of 76-Ge. The DEMONSTRATOR will contain 40 kg of germanium; up to 30 kg will be enriched to 86% in 76-Ge. The DEMONSTRATOR will be deployed deep underground in an ultra-low-background shielded environment. Operation of the DEMONSTRATOR aims to determine whether a future tonne-scale germanium experiment can achieve a background goal of one count per tonne-year in a 4-keV region of interest around the 76-Ge neutrinoless double-beta decay Q-value of 2039 keV.

  2. Diffusion of interstitial oxygen in silicon and germanium: a hybrid functional study

    Science.gov (United States)

    Colleoni, Davide; Pasquarello, Alfredo

    2016-12-01

    The minimum-energy paths for the diffusion of an interstitial O atom in silicon and germanium are studied through the nudged-elastic-band method and hybrid functional calculations. The reconsideration of the diffusion of O in silicon primarily serves the purpose of validating the procedure for studying the O diffusion in germanium. Our calculations show that the minimum energy path goes through an asymmetric transition state in both silicon and germanium. The stability of these transition states is found to be enhanced by the generation of unpaired electrons in the highest occupied single-particle states. Calculated energy barriers are 2.54 and 2.14 eV for Si and Ge, in very good agreement with corresponding experimental values of 2.53 and 2.08 eV, respectively.

  3. Two-Dimensional Spatial Imaging of Charge Transport in Germanium Crystals at Cryogenic Temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Moffatt, Robert [Stanford U.

    2016-01-01

    In this dissertation, I describe a novel apparatus for studying the transport of charge in semiconductors at cryogenic temperatures. The motivation to conduct this experiment originated from an asymmetry observed between the behavior of electrons and holes in the germanium detector crystals used by the Cryogenic Dark Matter Search (CDMS). This asymmetry is a consequence of the anisotropic propagation of electrons in germanium at cryogenic temperatures. To better model our detectors, we incorporated this effect into our Monte Carlo simulations of charge transport. The purpose of the experiment described in this dissertation is to test those models in detail. Our measurements have allowed us to discover a shortcoming in our most recent Monte Carlo simulations of electrons in germanium. This discovery would not have been possible without the measurement of the full, two-dimensional charge distribution, which our experimental apparatus has allowed for the first time at cryogenic temperatures.

  4. Normal processes of phonon-phonon scattering and thermal conductivity of germanium crystals with isotopic disorder

    CERN Document Server

    Kuleev, I G

    2001-01-01

    The effect of normal processes of the phonon-phonon scattering on the thermal conductivity of the germanium crystals with various isotopic disorder degrees is considered. The phonon pulse redistribution in the normal scattering processes both inside each oscillatory branch (the Simons mechanism) and between various phonon oscillatory branches (the Herring mechanism) is accounted for. The contributions of the longitudinal and cross-sectional phonons drift motion into the thermal conductivity are analyzed. It is shown that the pulse redistribution in the Herring relaxation mechanism leads to essential suppression of the longitudinal phonons drift motion in the isotopically pure germanium crystals. The calculations results of thermal conductivity for the Herring relaxation mechanism agree well with experimental data on the germanium crystals with various isotopic disorder degrees

  5. Impurity engineering for germanium-doped Czochralski silicon wafer used for ultra large scale integrated circuit

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Jiahe; Yang, Deren [State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou (China)

    2009-07-01

    Internal gettering (IG) technology has been challenged by both the reduction of thermal budget during device fabrication and the enlargement of wafer diameter. Improving the properties of Czochralski (Cz) silicon wafers by intentional impurity doping, the so-called 'impurity engineering (IE)', is defined. Germanium has been found to be one of the important impurities for improving the internal gettering effect in Cz silicon wafer. In this paper, the investigations on IE involved with the conventional furnace anneal based denudation processing for germanium-doped Cz silicon wafer are reviewed. Meanwhile, the potential mechanisms of germanium effects for the IE of Cz silicon wafer are also interpreted based on the experimental facts. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. The MAJORANA DEMONSTRATOR: A Search for Neutrinoless Double-beta Decay of Germanium-76

    Energy Technology Data Exchange (ETDEWEB)

    Schubert, Alexis G.; Aguayo, Estanislao; Avignone, F. T.; Zhang, C.; Back, Henning O.; Barabash, Alexander S.; Bergevin, M.; Bertrand, F.; Boswell, M.; Brudanin, V.; Busch, Matthew; Chan, Yuen-Dat; Christofferson, Cabot-Ann; Collar, J. I.; Combs, Dustin C.; Cooper, R. J.; Detwiler, Jason A.; Leon, Jonathan D.; Doe, Peter J.; Efremenko, Yuri; Egorov, Viatcheslav; Ejiri, H.; Elliott, S. R.; Esterline, James H.; Fast, James E.; Fields, N.; Finnerty, P.; Fraenkle, Florian; Gehman, Victor M.; Giovanetti, G. K.; Green, M.; Guiseppe, Vincente; Gusey, K.; Hallin, A. L.; Hazama, R.; Henning, Reyco; Hime, Andrew; Hoppe, Eric W.; Horton, Mark; Howard, Stanley; Howe, Mark; Johnson, R. A.; Keeter, K.; Keillor, Martin E.; Keller, C.; Kephart, Jeremy D.; Kidd, M. F.; Knecht, A.; Kochetov, Oleg; Konovalov, S.; Kouzes, Richard T.; LaFerriere, Brian D.; LaRoque, B. H.; Leviner, L.; Loach, J. C.; MacMullin, S.; Marino, Michael G.; Martin, R. D.; Mei, Dong-Ming; Merriman, Jason H.; Miller, M. L.; Mizouni, Leila; Nomachi, Masaharu; Orrell, John L.; Overman, Nicole R.; Phillips, D.; Poon, Alan; Perumpilly, Gopakumar; Prior, Gersende; Radford, D. C.; Rielage, Keith; Robertson, R. G. H.; Ronquest, M. C.; Shima, T.; Shirchenko, M.; Snavely, Kyle J.; Sobolev, V.; Steele, David; Strain, J.; Thomas, K.; Timkin, V.; Tornow, Werner; Vanyushin, I.; Varner, R. L.; Vetter, Kai; Vorren, Kris R.; Wilkerson, J. F.; Wolfe, B. A.; Yakushev, E.; Young, A.; Yu, Chang-Hong; Yumatov, Vladimir

    2012-09-28

    The observation of neutrinoless double-beta decay would determine whether the neutrino is a Majorana particle and provide information on the absolute scale of neutrino mass. The MAJORANA Collaboration is constructing the DEMONSTRATOR, an array of germanium detectors, to search for neutrinoless double-beta decay of 76Ge. The DEMONSTRATOR will contain 40 kg of germanium; up to 30 kg will be enriched to 86% in 76Ge. The DEMONSTRATOR will be deployed deep underground in an ultra-low-background shielded environment. Operation of the DEMONSTRATOR aims to determine whether a future tonne-scale germanium experiment can achieve a background goal of one count per tonne-year in a 4-keV region of interest around the 76Ge neutrinoless double-beta decay Q-value of 2039 keV.

  7. Impurity diffusion, point defect engineering, and surface/interface passivation in germanium

    Energy Technology Data Exchange (ETDEWEB)

    Chroneos, A.; Dimoulas, A. [MBE Laboratory, Institute of Materials Science, NCSR Demokritos, Athens (Greece); Schwingenschloegl, U. [PSE Division, KAUST, Thuwal (Saudi Arabia)

    2012-04-02

    In recent years germanium has been emerging as a mainstream material that could have important applications in the microelectronics industry. The principle aim of this study is to review investigations of the diffusion of technologically important p- and n-type dopants as well as surface and interface passivation issues in germanium. The diffusion of impurities in germanium is interrelated to the formation of clusters whenever possible, and possibilities for point defect engineering are discussed in view of recent results. The importance of electrically active defects on the Ge surface and interfaces is addressed considering strategies to suppress them and to passivate the surfaces/interfaces, bearing in mind their importance for advanced devices. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  8. Silicon-germanium (Sige) nanostructures production, properties and applications in electronics

    CERN Document Server

    Usami, N

    2011-01-01

    Nanostructured silicon-germanium (SiGe) provides the prospect of novel and enhanced electronic device performance. This book reviews the materials science and technology of SiGe nanostructures, including crystal growth, fabrication of nanostructures, material properties and applications in electronics.$bNanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices. The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition. This part also includes chapters covering strain engineering and mo...

  9. Europium-155 in Debris from Nuclear Weapons

    DEFF Research Database (Denmark)

    Aarkrog, Asker; Lippert, Jørgen Emil

    1967-01-01

    The lithium-drifted germanium detector enables determination of europium-155 on a routine basis in environmental samples contaminated with debris from nuclear weapons. From measurements of europium-155, cesium-144, and strontium-90 in air filters collected between 1961 and 1966, the yield...

  10. PREFACE: 2nd Workshop on Germanium Detectors and Technologies

    Science.gov (United States)

    Abt, I.; Majorovits, B.; Keller, C.; Mei, D.; Wang, G.; Wei, W.

    2015-05-01

    The 2nd workshop on Germanium (Ge) detectors and technology was held at the University of South Dakota on September 14-17th 2014, with more than 113 participants from 8 countries, 22 institutions, 15 national laboratories, and 8 companies. The participants represented the following big projects: (1) GERDA and Majorana for the search of neutrinoless double-beta decay (0νββ) (2) SuperCDMS, EDELWEISS, CDEX, and CoGeNT for search of dark matter; (3) TEXONO for sub-keV neutrino physics; (4) AGATA and GRETINA for gamma tracking; (5) AARM and others for low background radiation counting; (5) as well as PNNL and LBNL for applications of Ge detectors in homeland security. All participants have expressed a strong desire on having better understanding of Ge detector performance and advancing Ge technology for large-scale applications. The purpose of this workshop was to leverage the unique aspects of the underground laboratories in the world and the germanium (Ge) crystal growing infrastructure at the University of South Dakota (USD) by brining researchers from several institutions taking part in the Experimental Program to Stimulate Competitive Research (EPSCoR) together with key leaders from international laboratories and prestigious universities, working on the forefront of the intensity to advance underground physics focusing on the searches for dark matter, neutrinoless double-beta decay (0νββ), and neutrino properties. The goal of the workshop was to develop opportunities for EPSCoR institutions to play key roles in the planned world-class research experiments. The workshop was to integrate individual talents and existing research capabilities, from multiple disciplines and multiple institutions, to develop research collaborations, which includes EPSCor institutions from South Dakota, North Dakota, Alabama, Iowa, and South Carolina to support multi-ton scale experiments for future. The topic areas covered in the workshop were: 1) science related to Ge

  11. Systematic Uncertainties in High-Rate Germanium Data

    Energy Technology Data Exchange (ETDEWEB)

    Gilbert, Andrew J.; Fast, James E.; Fulsom, Bryan G.; Pitts, William K.; VanDevender, Brent A.; Wood, Lynn S.

    2016-10-06

    For many nuclear material safeguards inspections, spectroscopic gamma detectors are required which can achieve high event rates (in excess of 10^6 s^-1) while maintaining very good energy resolution for discrimination of neighboring gamma signatures in complex backgrounds. Such spectra can be useful for non-destructive assay (NDA) of spent nuclear fuel with long cooling times, which contains many potentially useful low-rate gamma lines, e.g., Cs-134, in the presence of a few dominating gamma lines, such as Cs-137. Detectors in use typically sacrifice energy resolution for count rate, e.g., LaBr3, or visa versa, e.g., CdZnTe. In contrast, we anticipate that beginning with a detector with high energy resolution, e.g., high-purity germanium (HPGe), and adapting the data acquisition for high throughput will be able to achieve the goals of the ideal detector. In this work, we present quantification of Cs-134 and Cs-137 activities, useful for fuel burn-up quantification, in fuel that has been cooling for 22.3 years. A segmented, planar HPGe detector is used for this inspection, which has been adapted for a high-rate throughput in excess of 500k counts/s. Using a very-high-statistic spectrum of 2.4*10^11 counts, isotope activities can be determined with very low statistical uncertainty. However, it is determined that systematic uncertainties dominate in such a data set, e.g., the uncertainty in the pulse line shape. This spectrum offers a unique opportunity to quantify this uncertainty and subsequently determine required counting times for given precision on values of interest.

  12. Detached Solidification of Germanium-Silicon Crystals on the ISS

    Science.gov (United States)

    Volz, M. P.; Mazuruk, K.; Croell, A.

    2016-01-01

    A series of Ge(sub 1-x) Si(sub x) crystal growth experiments are planned to be conducted in the Low Gradient Furnace (LGF) onboard the International Space Station. The primary objective of the research is to determine the influence of containment on the processing-induced defects and impurity incorporation in germanium-silicon alloy crystals. A comparison will be made between crystals grown by the normal and "detached" Bridgman methods and the ground-based float zone technique. Crystals grown without being in contact with a container have superior quality to otherwise similar crystals grown in direct contact with a container, especially with respect to impurity incorporation, formation of dislocations, and residual stress in crystals. "Detached" or "dewetted" Bridgman growth is similar to regular Bridgman growth in that most of the melt is in contact with the crucible wall, but the crystal is separated from the wall by a small gap, typically of the order of 10-100 microns. Long duration reduced gravity is essential to test the proposed theory of detached growth. Detached growth requires the establishment of a meniscus between the crystal and the ampoule wall. The existence of this meniscus depends on the ratio of the strength of gravity to capillary forces. On Earth, this ratio is large and stable detached growth can only be obtained over limited conditions. Crystals grown detached on the ground exhibited superior structural quality as evidenced by measurements of etch pit density, synchrotron white beam X-ray topography and double axis X-ray diffraction.

  13. Low Power Silicon Germanium Electronics for Microwave Radiometers

    Science.gov (United States)

    Doiron, Terence A.; Krebs, Carolyn (Technical Monitor)

    2001-01-01

    Space-based radiometric observations of key hydrological parameters (e.g., soil moisture) at the spatial and temporal scales required in the post-2002 era face significant technological challenges. These measurements are based on relatively low frequency thermal microwave emission (at 1.4 GHz for soil moisture and salinity, 10 GHz and up for precipitation, and 19 and 37 GHz for snow). The long wavelengths at these frequencies coupled with the high spatial and radiometric resolutions required by the various global hydrology communities necessitate the use of very large apertures (e.g., greater than 20 m at 1.4 GHz) and highly integrated stable RF electronics on orbit. Radio-interferometric techniques such as Synthetic Thinned Array Radiometry (STAR), using silicon germanium (SiGe) low power radio frequency integrated circuits (RFIC), is one of the most promising technologies to enable very large non-rotating apertures in space. STAR instruments are composed of arrays of small antenna/receiving elements that are arranged so that the collecting area is smaller than an equivalent real aperture system, allowing very high packing densities for launch. A 20 meter aperture at L-band, for example, will require greater than 1000 of these receiving elements. SiGe RFIC's reduce power consumption enough to make an array like this possible in the power-limited environment of space flight. An overview of the state-of-the-art will be given, and current work in the area of SiGe radiometer development for soil moisture remote sensing will be discussed.

  14. A Complete Physical Germanium-on-Silicon Quantum Dot Self-Assembly Process

    Science.gov (United States)

    Alkhatib, Amro; Nayfeh, Ammar

    2013-06-01

    Achieving quantum dot self-assembly at precise pre-defined locations is of vital interest. In this work, a novel physical method for producing germanium quantum dots on silicon using nanoindentation to pre-define nucleation sites is described. Self-assembly of ordered ~10 nm height germanium quantum dot arrays on silicon substrates is achieved. Due to the inherent simplicity and elegance of the proposed method, the results describe an attractive technique to manufacture semiconductor quantum dot structures for future quantum electronic and photonic applications.

  15. GIOVE: a new detector setup for high sensitivity germanium spectroscopy at shallow depth

    Energy Technology Data Exchange (ETDEWEB)

    Heusser, G.; Weber, M.; Hakenmueller, J.; Lindner, M.; Maneschg, W.; Simgen, H.; Stolzenburg, D.; Strecker, H. [Max-Planck-Institut fuer Kernphysik, Heidelberg (Germany); Laubenstein, M. [Laboratori Nazionali del Gran Sasso, Assergi (Italy)

    2015-11-15

    We report on the development and construction of the high-purity germanium spectrometer setup GIOVE (Germanium Inner Outer VEto), recently built and now operated at the shallow underground laboratory of the Max-Planck-Institut fuer Kernphysik, Heidelberg. Particular attention was paid to the design of a novel passive and active shield, aiming at efficient rejection of environmental and muon induced radiation backgrounds. The achieved sensitivity level of ≤ 100μBq kg{sup -1} for primordial radionuclides from U and Th in typical γ ray sample screening measurements is unique among instruments located at comparably shallow depths and can compete with instruments at far deeper underground sites. (orig.)

  16. GIOVE - A New Detector Setup for High Sensitivity Germanium Spectroscopy At Shallow Depth

    CERN Document Server

    Heusser, Gerd; Hakenmüller, Janina; Laubenstein, Matthias; Lindner, Manfred; Maneschg, Werner; Simgen, Hardy; Stolzenburg, Dominik; Strecker, Herbert

    2015-01-01

    We report on the development and construction of the high-purity germanium spectrometer setup GIOVE (Germanium Inner Outer Veto), recently built and now operated at the shallow underground laboratory of the Max-Planck-Institut f\\"ur Kernphysik, Heidelberg. Particular attention was paid to the design of a novel passive and active shield, aiming at efficient rejection of environmental and muon induced radiation backgrounds. The achieved sensitivity level of <100 {\\mu}Bq/kg for primordial radionuclides from U and Th in typical {\\gamma} ray sample screening measurements is unique among instruments located at comparably shallow depths and can compete with instruments at far deeper underground sites.

  17. Atomic ionization of germanium by neutrinos from an ab initio approach

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Jiunn-Wei [Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China); National Center for Theoretical Sciences and Leung Center for Cosmology and Particle Astrophysics, National Taiwan University, Taipei 10617, Taiwan (China); Chi, Hsin-Chang [Department of Physics, National Dong Hwa University, Shoufeng, Hualien 97401, Taiwan (China); Huang, Keh-Ning [Department of Physics, Sichuan University, Chengdu, Sichuan (China); Department of Physics, Fuzhou University, Fuzhou, Fujian (China); Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China); Liu, C.-P. [Department of Physics, National Dong Hwa University, Shoufeng, Hualien 97401, Taiwan (China); Shiao, Hao-Tse [Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China); Singh, Lakhwinder [Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China); Department of Physics, Banaras Hindu University, Varanasi 221005 (India); Wong, Henry T. [Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China); Wu, Chih-Liang; Wu, Chih-Pan [Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China)

    2014-04-04

    An ab initio calculation of atomic ionization of germanium by neutrinos was carried out in the framework of multiconfiguration relativistic random phase approximation and benchmarked by related atomic structure and photoabsorption data. This improves over the conventional approach based on scattering off free electrons whose validity at sub-keV energy transfer is questionable. Limits on neutrino magnetic moments are derived using reactor neutrino data taken with low threshold germanium detectors. Future applications of these atomic techniques will greatly reduce the atomic uncertainties in low-energy neutrino and dark matter detections.

  18. Optimization of the Transport Shield for Neutrinoless Double Beta-decay Enriched Germanium

    Energy Technology Data Exchange (ETDEWEB)

    Aguayo Navarrete, Estanislao; Kouzes, Richard T.; Orrell, John L.; Reid, Douglas J.; Fast, James E.

    2012-04-15

    This document presents results of an investigation of the material and geometry choice for the transport shield of germanium, the active detector material used in 76Ge neutrinoless double beta decay searches. The objective of this work is to select the optimal material and geometry to minimize cosmogenic production of radioactive isotopes in the germanium material. The design of such a shield is based on the calculation of the cosmogenic production rate of isotopes that are known to cause interfering backgrounds in 76Ge neutrinoless double beta decay searches.

  19. Extraction of Physics Signals Near Threshold with Germanium Detectors in Neutrino and Dark Matter Experiments

    CERN Document Server

    Soma, A K; Lin, F K; Singh, M K; Jiang, H; Liu, S K; Singh, L; Wu, Y C; Yang, L T; Zhao, W; Agartioglu, M; Asryan, G; Chuang, Y C; Deniz, M; Hsu, C L; Hsu, Y H; Huang, T R; Li, H B; Li, J; Liao, F T; Liao, H Y; Lin, C W; Lin, S T; Ma, J L; Sharma, V; Shen, Y T; Singh, V; Su, J; Subrahmanyam, V S; Tseng, C H; Wang, J J; Wong, H T; Xu, Y; Yang, S W; Yu, C X; Yuan, X C; Yue, Q; Zeyre, M

    2014-01-01

    Germanium ionization detectors with sensitivities as low as 100 eVee open new windows for the studies of neutrino and dark matter physics. The physics motivations of sub-keV germanium detectors are summarized. The amplitude of physics signals is comparable to those due to fluctuations of the pedestal electronic noise. Various experimental issues have to be attended before the promises of this new detector technique can be fully exploited. These include quenching factors, energy definition and calibration, signal triggering and selection together with their associated inefficiencies derivation. The efforts and results of an R&D program to address these challenges are presented.

  20. Temperature-dependent hyperfine interactions at {sup 111}Cd-C complex in germanium

    Energy Technology Data Exchange (ETDEWEB)

    Mola, Genene Tessema [University of Kwazulu-Natal, School Chemistry and Physics, Pietermaritzburg Campus, Private Bag X01, Scottsville (South Africa)

    2013-09-15

    The temperature dependent nuclear hyperfine interaction of {sup 111}Cd-carbon complex in germanium has been studied using the perturbed {gamma}-{gamma} angular correlation (PAC) method. The parameters of the hyperfine interaction representing substitutional carbon-cadmium complex in germanium ({nu} {sub Q1}=207(1) MHz ({eta}=0.16)) shows dependence on temperature. The formation and thermal stability of the complex has been reported by the same author earlier. It was found in this study that the quadrupole coupling constant of the interaction increases at sample temperature below 293 K. The results are encouraging toward better understanding of the complex in the host matrix. (orig.)

  1. Doping of germanium and silicon crystals with non-hydrogenic acceptors for far infrared lasers

    Science.gov (United States)

    Haller, Eugene E.; Brundermann, Erik

    2000-01-01

    A method for doping semiconductors used for far infrared lasers with non-hydrogenic acceptors having binding energies larger than the energy of the laser photons. Doping of germanium or silicon crystals with beryllium, zinc or copper. A far infrared laser comprising germanium crystals doped with double or triple acceptor dopants permitting the doped laser to be tuned continuously from 1 to 4 terahertz and to operate in continuous mode. A method for operating semiconductor hole population inversion lasers with a closed cycle refrigerator.

  2. Charge-trap correction and radiation damage in orthogonal-strip planar germanium detectors

    Energy Technology Data Exchange (ETDEWEB)

    Hull, E.L. [PHDS Corporation, 3011 Amherst Road, Knoxville, TN 37921 (United States); Jackson, E.G.; Lister, C.J. [Physics Department, University of Massachusetts Lowell, Lowell, MA 01854 (United States); Pehl, R.H. [PHDS Corporation, 3011 Amherst Road, Knoxville, TN 37921 (United States)

    2014-10-21

    A charge-carrier trap correction technique was developed for orthogonal strip planar germanium gamma-ray detectors. The trap corrector significantly improves the gamma-ray energy resolution of detectors with charge-carrier trapping from crystal-growth defects and radiation damage. Two orthogonal-strip planar germanium detectors were radiation damaged with 2-MeV neutron fluences of ∼8×10{sup 9} n/cm{sup 2}. The radiation-damaged detectors were studied in the 60–80 K temperature range.

  3. Crossed-beam superluminescent diode.

    Science.gov (United States)

    Vaissié, Laurent; Smolski, Oleg V; Johnson, Eric G

    2005-07-01

    We investigate a novel surface-emitting superluminescent diode configuration that uses two detuned grating outcouplers to suppress lasing. This device exhibits a shaped beam with a peak power of 1.5 W quasi-continuous wave with an 11 nm bandwidth centered on 970 nm.

  4. Thermal-Diode Sandwich Panel

    Science.gov (United States)

    Basiulis, A.

    1986-01-01

    Thermal diode sandwich panel transfers heat in one direction, but when heat load reversed, switches off and acts as thermal insulator. Proposed to control temperature in spacecraft and in supersonic missiles to protect internal electronics. In combination with conventional heat pipes, used in solar panels and other heat-sensitive systems.

  5. Spin-photon entangling diode

    DEFF Research Database (Denmark)

    Flindt, Christian; Sørensen, A. S.; Lukin, M. D.;

    2007-01-01

    We propose a semiconductor device that can electrically generate entangled electron spin-photon states, providing a building block for entanglement of distant spins. The device consists of a p-i-n diode structure that incorporates a coupled double quantum dot. We show that electronic control of t...

  6. Application of vacuum reduction and chlorinated distillation to enrich and prepare pure germanium from coal fly ash.

    Science.gov (United States)

    Zhang, Lingen; Xu, Zhenming

    2017-01-05

    Germanium, as strategic reserve metal, plays critical role in high-tech industry. However, a contradiction of increasing consumption and scarcity of germanium resource is becoming more and more prominent. This paper proposed an integrated process to recycle germanium from coal fly ash. This technological process mainly consisted of two procedures: vacuum reduction with the purposes of enriching germanium and chlorinated distillation with the purposes of purifying germanium. Several highlights are summarized as follows: (i) Separation principle and reaction mechanism were discussed to understand this integrated process. (ii) Optimum designs and product analysis were developed to guide industrial recycling. The appropriate parameters for vacuum reduction process on the basis of response surface methodology (RSM) were 920.53°C and 259.63Pa, with 16.64wt.% reductant, and for the chlorinated distillation process, adding 8mol/l HCl and L/S 7, 8wt.% MnO2. The global recovery rate of germanium was 83.48±0.36% for the integrated process. (iii) This process overcomes the shortages of traditional process and shows its efficiency and environmental performance. It is significant in accordance with the "Reduce, Reuse and Recycle Principle" for solid waste and further provides a new opportunity for germanium recovery from waste by environment-friendly way.

  7. Quantum devices in silicon/silicon germanium heterostructures

    Science.gov (United States)

    Slinker, Keith A.

    This thesis presents the fabrication and characterization of silicon/silicon-germanium quantum wells, quantum dots, and quantum point contacts. These systems are promising for quantum computing applications due to the long predicted spin lifetimes. In addition, the valley states in Si/SiGe two-dimensional electron gases (2DEGs) are a novel phenomenon in regards to nanostructures, and characterizing these states is also necessary for potential computing applications. However, working with these heterostructures---especially in regards to metal Schottky gating---has proved historically challenging such that single electron transistors had not been achieved at the onset of this research. The first quantum dots in Si/SiGe are presented, defined completely by CF4 reactive ion etch without the use of metal gates. Etch-defined 2DEG side gates are used to modulate the potential of the quantum dot. Results for various metal gating schemes are also presented, culminating in the first Schottky-gated quantum dots in Si/SiGe. Differing from the etch-defined dots, the tunnel junctions of the metal-etch hybrid dot are fully tunable by the voltage applied to the top gates. Hall measurements of multiple heterostructures are presented, providing evidence that many of the challenges associated with gating Si/SiGe can be attributed to undepleted dopants in the supply layer. These dopants screen the top gates but can be detected as a parallel conduction channel in Hall measurements taken at a 2 K. A fully top-gate defined quantum dot was fabricated on an optimized Si/SiGe heterostructure, and the single particle excited states were resolved for the first time in Si/SiGe. Finally, quantum point contacts were defined by metal top gates, and the conduction was mapped out over a large range of magnetic field and voltages on the gates. The positions of the conductance steps are used to extract the valley splitting---a quantity that had been measured in a bulk 2DEG but not in a nanostructure

  8. Germanium and Rare Earth Element accumulation in woody bioenergy crops

    Science.gov (United States)

    Hentschel, Werner

    2016-04-01

    Germanium and REEs are strategic elements that are used for high tech devices and engineered systems, however these elements are hardly concentrated into mineable ore deposits. Since these elements occur widely dispersed in the earth crust with concentrations of several mgṡkg-1 (Ge 1.6 mgṡkg-1, Nd 25 mgṡkg-1) a new possibility to gain these elements could be phytomining, a technique that uses plants to extract elements from soils via their roots. Since knowledge about accumulating plant species is quite limited we conducted research on the concentrations of strategic elements in wood and leaves of fast growing tree species (Salix spec., Populus spec., Betula pendula, Alnus glutinosa, Fraxinus excelsior, Acer pseudoplatanus). In total 35 study sites were selected in the mining affected area around Freiberg (Saxony, Germany), differing in their species composition and degree of contamination with toxic trace metals (Pb, As, Cd). On each site plant tissues (wood and leaves, respectively) of different species were sampled. In addition soil samples were taken from a soil depth of 0 - 30 cm and 30 - 60 cm. The aim of our work was to investigate correlations between the concentrations of the target elements in plant tissues and soil characteristics like pH, texture, nutrients and concentrations in six operationally defined soil fractions (mobile, acid soluble, oxidizable, amorphic oxides, crystalline oxides, residual or siliceous). Concentrations of elements in soil extracts and plant tissues were measured with ICP-MS. The element Nd was selected as representative for the group of REEs, since this element showed a high correlation with the concentrations of the other REE We found that the concentration of Nd in the leaves (0.31 mgṡkg-1Nd) were several times higher than in herbaceous species (0.05 mgṡkg-1 Nd). The concentration of Ge in leaves were ten times lower than that of Nd whereas in herbaceous species Nd and Ge were in equal magnitude. Within the tree

  9. High bit rate germanium single photon detectors for 1310nm

    Science.gov (United States)

    Seamons, J. A.; Carroll, M. S.

    2008-04-01

    There is increasing interest in development of high speed, low noise and readily fieldable near infrared (NIR) single photon detectors. InGaAs/InP Avalanche photodiodes (APD) operated in Geiger mode (GM) are a leading choice for NIR due to their preeminence in optical networking. After-pulsing is, however, a primary challenge to operating InGaAs/InP single photon detectors at high frequencies1. After-pulsing is the effect of charge being released from traps that trigger false ("dark") counts. To overcome this problem, hold-off times between detection windows are used to allow the traps to discharge to suppress after-pulsing. The hold-off time represents, however, an upper limit on detection frequency that shows degradation beginning at frequencies of ~100 kHz in InGaAs/InP. Alternatively, germanium (Ge) single photon avalanche photodiodes (SPAD) have been reported to have more than an order of magnitude smaller charge trap densities than InGaAs/InP SPADs2, which allowed them to be successfully operated with passive quenching2 (i.e., no gated hold off times necessary), which is not possible with InGaAs/InP SPADs, indicating a much weaker dark count dependence on hold-off time consistent with fewer charge traps. Despite these encouraging results suggesting a possible higher operating frequency limit for Ge SPADs, little has been reported on Ge SPAD performance at high frequencies presumably because previous work with Ge SPADs has been discouraged by a strong demand to work at 1550 nm. NIR SPADs require cooling, which in the case of Ge SPADs dramatically reduces the quantum efficiency of the Ge at 1550 nm. Recently, however, advantages to working at 1310 nm have been suggested which combined with a need to increase quantum bit rates for quantum key distribution (QKD) motivates examination of Ge detectors performance at very high detection rates where InGaAs/InP does not perform as well. Presented in this paper are measurements of a commercially available Ge APD

  10. Ultra Shallow Arsenic Junctions in Germanium Formed by Millisecond Laser Annealing

    DEFF Research Database (Denmark)

    Hellings, G.; Rosseel, E.; Simoen, E.

    2011-01-01

    Millisecond laser annealing is used to fabricate ultra shallow arsenic junctions in preamorphized and crystalline germanium, with peak temperatures up to 900 degrees C. At this temperature, As indiffusion is observed while yielding an electrically active concentration up to 5.0 x 10(19) cm(-3...

  11. Fabrication and performance of intrinsic germanium photodiodes. [for atmospheric IR spectroscopy

    Science.gov (United States)

    Beiting, E. J., III; Feldman, P. D.

    1977-01-01

    The paper presents fabrication details for an intrinsic germanium photodiode developed for study of atmospheric constituents, the airglow and auroras in the 1-2 micron spectral range. Attention is given to cutting of the single crystal, spreading of the lithium dispersion, sputtering of a gold coating, and surface passivation. A wavelength response curve is presented.

  12. Chemical synthesis of germanium nanoparticles with uniform size as anode materials for lithium ion batteries.

    Science.gov (United States)

    Wang, Liangbiao; Bao, Keyan; Lou, Zhengsong; Liang, Guobing; Zhou, Quanfa

    2016-02-21

    A simple Mg-thermal reduction reaction is reported to synthesize germanium (Ge) nanoparticles with a uniform size at a low temperature of 400 °C in an autoclave. The as-prepared Ge nanoparticles exhibit promising anode applications in lithium ion batteries with high capacity and excellent cycling stability.

  13. Dark Matter Search with sub-keV Germanium Detectors at the China Jinping Underground Laboratory

    CERN Document Server

    Yue, Qian

    2012-01-01

    Germanium detectors with sub-keV sensitivities open a window to search for low-mass WIMP dark matter. The CDEX-TEXONO Collaboration is conducting the first research program at the new China Jinping Underground Laboratory with this approach. The status and plans of the laboratory and the experiment are discussed.

  14. Germanium detectors for nuclear spectroscopy: Current research and development activity at LNL

    Energy Technology Data Exchange (ETDEWEB)

    Napoli, D. R., E-mail: daniel.r.napoli@lnl.infn.it [Istituto Nazionale di Fisica Nucleare, Laboratori Nazionali di Legnaro, Viale dell’Università 2, 35020 Legnaro, Padova (Italy); Maggioni, G., E-mail: maggioni@lnl.infn.it; Carturan, S.; Gelain, M. [Istituto Nazionale di Fisica Nucleare, Laboratori Nazionali di Legnaro, Viale dell’Università 2, 35020 Legnaro, Padova (Italy); Department of Physics and Astronomy “G. Galilei”, University of Padova, Via Marzolo 8, 35121 Padova (Italy); Eberth, J. [Institut für Kernphysik, Universität zu Köln, Zülpicher Straße 77, D-50937 Köln (Germany); Grimaldi, M. G.; Tatí, S. [Department of Physics and Astronomy, University of Catania (Italy); Riccetto, S. [University of Camerino and INFN of Perugia (Italy); Mea, G. Della [Istituto Nazionale di Fisica Nucleare, Laboratori Nazionali di Legnaro, Viale dell’Università 2, 35020 Legnaro, Padova (Italy); University of Trento (Italy)

    2016-07-07

    High-purity Germanium (HPGe) detectors have reached an unprecedented level of sophistication and are still the best solution for high-resolution gamma spectroscopy. In the present work, we will show the results of the characterization of new surface treatments for the production of these detectors, studied in the framework of our multidisciplinary research program in HPGe detector technologies.

  15. Dark Matter Search with Sub-Kev Germanium Detectors at the China Jinping Underground Laboratory

    Science.gov (United States)

    Yue, Qian; Wong, Henry T.

    2013-12-01

    Germanium detectors with sub-keV sensitivities open a window to search for low-mass WIMP dark matter. The CDEX-TEXONO Collaboration is conducting the first research program at the new China Jinping Underground Laboratory with this approach. The status and plans of the laboratory and the experiment are discussed.

  16. Germanium recovery from gasification fly ash: evaluation of end-products obtained by precipitation methods.

    Science.gov (United States)

    Arroyo, Fátima; Font, Oriol; Fernández-Pereira, Constantino; Querol, Xavier; Juan, Roberto; Ruiz, Carmen; Coca, Pilar

    2009-08-15

    In this study the purity of the germanium end-products obtained by two different precipitation methods carried out on germanium-bearing solutions was evaluated as a last step of a hydrometallurgy process for the recovery of this valuable element from the Puertollano Integrated Gasification Combined Cycle (IGCC) fly ash. Since H(2)S is produced as a by-product in the gas cleaning system of the Puertollano IGCC plant, precipitation of germanium as GeS(2) was tested by sulfiding the Ge-bearing solutions. The technological and hazardous issues that surround H(2)S handling conducted to investigate a novel precipitation procedure: precipitation as an organic complex by adding 1,2-dihydroxy benzene pyrocatechol (CAT) and cetyltrimethylammonium bromide (CTAB) to the Ge-bearing solutions. Relatively high purity Ge end-products (90 and 93% hexagonal-GeO(2) purity, respectively) were obtained by precipitating Ge from enriched solutions, as GeS(2) sulfiding the solutions with H(2)S, or as organic complex with CAT/CTAB mixtures and subsequent roasting of the precipitates. Both methods showed high efficiency (>99%) to precipitate selectively Ge using a single precipitation stage from germanium-bearing solutions.

  17. Probing the structural evolution of ruthenium doped germanium clusters: Photoelectron spectroscopy and density functional theory calculations

    Science.gov (United States)

    Jin, Yuanyuan; Lu, Shengjie; Hermann, Andreas; Kuang, Xiaoyu; Zhang, Chuanzhao; Lu, Cheng; Xu, Hongguang; Zheng, Weijun

    2016-07-01

    We present a combined experimental and theoretical study of ruthenium doped germanium clusters, RuGen- (n = 3-12), and their corresponding neutral species. Photoelectron spectra of RuGen- clusters are measured at 266 nm. The vertical detachment energies (VDEs) and adiabatic detachment energies (ADEs) are obtained. Unbiased CALYPSO structure searches confirm the low-lying structures of anionic and neutral ruthenium doped germanium clusters in the size range of 3 ≤ n ≤ 12. Subsequent geometry optimizations using density functional theory (DFT) at PW91/LANL2DZ level are carried out to determine the relative stability and electronic properties of ruthenium doped germanium clusters. It is found that most of the anionic and neutral clusters have very similar global features. Although the global minimum structures of the anionic and neutral clusters are different, their respective geometries are observed as the low-lying isomers in either case. In addition, for n > 8, the Ru atom in RuGen-/0 clusters is absorbed endohedrally in the Ge cage. The theoretically predicted vertical and adiabatic detachment energies are in good agreement with the experimental measurements. The excellent agreement between DFT calculations and experiment enables a comprehensive evaluation of the geometrical and electronic structures of ruthenium doped germanium clusters.

  18. Denuded Zone Formation in Germanium Codoped Heavily Phosphorus-Doped Czochralski Silicon

    Institute of Scientific and Technical Information of China (English)

    LIN Li-Xia; CHEN Jia-He; WU Peng; ZENG Yu-Heng; MA Xiang-Yang; YANG De-Ren

    2011-01-01

    The formation of a denuded zone(DZ) by conventional furnace annealing(CFA) and rapid thermal annealing (RTA) based denudation processing is investigated and the gettering of copper(Cu) atoms in germanium co-doped heavily phosphorus-doped Czochralski(GHPCZ)silicon wafers is evaluated. It is suggested that both a good quality defect-free DZ with a suitable width in the sub-surface area and a high density bulk micro-defect(BMD)region could be formed in heavily phosphorus-doped Czochralski(HPCZ)silicon and GHPCZ silicon wafers.This is ascribed to the formation of phosphorus-vacancy(P-V) related complexes and germanium-vacancy(GeV) related complexes. Compared with HPCZ silicon, the DZ width is wider in the GHPCZ silicon sample with CFA-based denudation processing but narrower in the one with two-step RTA pretreatments. These phenomena are ascribed to the enhancing effect of germanium on oxygen out-diffusion movement and oxygen precipitate nucleation, respectively. Furthermore, fairly clean DZs near the surface remain in both the HPCZ and GHPCZ silicon wafers after Cu in-diffusion, except for the HPCZ silicon wafer which underwent denudation processing with a CFA pretreatment, suggesting that germanium doping could improve the gettering of Cu contamination.

  19. Impact of severe cracked germanium (111 substrate on aluminum indium gallium phosphate light-emitting-diode’s electro-optical performance

    Directory of Open Access Journals (Sweden)

    Annaniah Luruthudass

    2016-01-01

    Full Text Available Cracked die is a serious failure mode in the Light Emitting Diode (LED industry – affecting LED quality and long-term reliability performance. In this paper an investigation has been carried out to find the correlation between severe cracked germanium (Ge substrate of an aluminum indium gallium phosphate (AlInGaP LED and its electro-optical performance after the Temperature Cycle (TC test. The LED dice were indented at several bond forces using a die bonder. The indented dice were analysed using a Scanning Electron Microscope (SEM. The result showed that severe cracks were observed at 180 gF onward. As the force of indentation increases, crack formation also becomes more severe thus resulting in the chipping of the substrate. The cracked dies were packaged and the TC test was performed. The results did not show any electro-optical failure or degradation, even after a 1000 cycle TC test. Several mechanically cross-sectioned cracked die LEDs, were analysed using SEM and found that no crack reached the active layer. This shows that severely cracked Ge substrate are able to withstand a −40°C/+100°C TC test up to 1000 cycles and LED optical performance is not affected. A small leakage current was observed in all of the cracked die LEDs in comparison to the reference unit. However, this value is smaller than the product specification and is of no concern.

  20. Design and optimisation of suspended strained germanium membranes for near-infrared lasing (Conference Presentation)

    Science.gov (United States)

    Burt, Daniel; Aldeek, Waseem; Aldaghri, Osamah A.; Ikonic, Zoran; Querin, Oswaldo M.; Kelsall, Robert W.

    2016-05-01

    The development of a semiconductor laser compatible with silicon substrates and high-volume silicon integrated circuit manufacturing is a key requirement for monolithic silicon photonic transceivers. Tensile strained germanium is a promising material system which meets these criteria, and both optically pumped and electrically injected lasing have been reported[1,2]. It is well established that growth of thick (~1 micron) layers of germanium on silicon substrates by two-stage chemical vapour deposition followed by thermal annealing results in nearly-relaxed germanium with a residual biaxial tensile strain of typically 0.15-0.25% [3]. Several researchers have investigated methods of amplifying this built-in strain in order to increase the attainable optical gain. Increased uniaxial strain levels have been demonstrated in suspended linear bridge structures created by wet chemical underetching. However, uniaxial strain is less effective than biaxial strain in converting germanium from an indirect to a direct gap semiconductor and hence generating substantial optical gain. In this work, we have computationally investigated and optimised two-dimensional patterning and under-etching of germanium membranes in order to achieve biaxial strain amplification. Strain simulations were carried out using finite element methods and the shape of the suspended germanium structures was optimised to achieve the highest tensile strain whilst remaining below the empirically determined yield strength of the thin membranes. The net optical gain distribution across the membrane was calculated using 8 band k.p bandstructure to determine the full interband gain, the inter-valence-band absorption and the intervalley and intravalley phonon- and impurity-assisted free carrier absorption. Band-gap narrowing effects were included using empirical data. Biaxial strain values of ~1% can be achieved in the lasing region of the structure, which, although below the level required to convert germanium

  1. Fabrication and characteristics of high-K HfO2 gate dielectrics on n-germanium

    Institute of Scientific and Technical Information of China (English)

    Han De-Dong; Kang Jin-Feng; Liu Xiao-Yan; Sun Lei; Luo Hao; Han Ru-Qi

    2007-01-01

    This paper reports that the high-K HfO2 gate dielectrics are fabricated on n-germanium substrates by sputtering Hf on Ge and following by a furnace annealing. The impacts of sputtering ambient, annealing ambient and annealing temperature on the electrical properties of high-K HfO2 gate dielectrics on germanium substrates are investigated.Experimental results indicate that high-K HfO2 gate dielectrics on germanium substrates with good electrical characteristics are obtained, the electrical properties of high-K HfO2 gate dielectrics is strongly correlated with sputtering ambient, annealing ambient and annealing temperature.

  2. ORGANIC LIGHT EMITTING DIODE (OLED

    Directory of Open Access Journals (Sweden)

    Aririguzo Marvis Ijeaku

    2015-09-01

    Full Text Available An Organic Light Emitting Diode (OLED is a device composed of an organic layer that emits lights in response to an electrical current. Organic light emitting diodes have advanced tremendously over the past decades. The different manufacturing processes of the OLED itself to several advantages over flat panel displays made with LCD technology which includes its light weight and flexible plastic substrates, wider viewing angles, improved brightness, better power efficiency and quicker response time. However, its drawbacks include shorter life span, poor color balance, poor outdoor performance, susceptibility to water damage etc.The application of OLEDs in electronics is on the increase on daily basics from cameras to cell phones to OLED televisions, etc. Although OLEDs provides prospects for thinner, smarter, lighter and ultraflexible electronics displays, however, due to high cost of manufacturing, it is not yet widely used.

  3. Quantum Noise in Laser Diodes

    Science.gov (United States)

    Giacobino, E.; Marin, F.; Bramati, A.; Jost, V.; Poizat, J. Ph.; Roch, J.-F.; Grangier, P.; Zhang, T.-C.

    1996-01-01

    We have investigated the intensity noise of single mode laser diodes, either free-running or using different types of line narrowing techniques at room temperature. We have measured an intensity squeezing of 1.2 dB with grating-extended cavity lasers and 1.4 dB with injection locked lasers (respectively 1.6 dB and 2.3 dB inferred at the laser output). We have observed that the intensity noise of a free-running nominally single mode laser diode results from a cancellation effect between large anti-correlated fluctuations of the main mode and of weak longitudinal side modes. Reducing the side modes by line narrowing techniques results in intensity squeezing.

  4. Megahertz organic/polymer diodes

    Science.gov (United States)

    Katz, Howard Edan; Sun, Jia; Pal, Nath Bhola

    2012-12-11

    Featured is an organic/polymer diode having a first layer composed essentially of one of an organic semiconductor material or a polymeric semiconductor material and a second layer formed on the first layer and being electrically coupled to the first layer such that current flows through the layers in one direction when a voltage is applied in one direction. The second layer is essentially composed of a material whose characteristics and properties are such that when formed on the first layer, the diode is capable of high frequency rectifications on the order of megahertz rectifications such as for example rectifications at one of above 100KHz, 500KhZ, IMHz, or 10 MHz. In further embodiments, the layers are arranged so as to be exposed to atmosphere.

  5. Characterisation of Silicon Pad Diodes

    CERN Document Server

    Hodson, Thomas Connor

    2017-01-01

    Silicon pad sensors are used in high luminosity particle detectors because of their excellent timing resolution, radiation tolerance and possible high granularity. The effect of different design decisions on detector performance can be investigated nondestructively through electronic characterisation of the sensor diodes. Methods for making accurate measurements of leakage current and cell capacitance are described using both a standard approach with tungsten needles and an automated approach with a custom multiplexer and probing setup.

  6. High power coherent polarization locked laser diode.

    Science.gov (United States)

    Purnawirman; Phua, P B

    2011-03-14

    We have coherently combined a broad area laser diode array to obtain high power single-lobed output by using coherent polarization locking. The single-lobed coherent beam is achieved by spatially combining four diode emitters using walk-off crystals and waveplates while their phases are passively locked via polarization discrimination. While our previous work focused on coherent polarization locking of diode in Gaussian beams, we demonstrate in this paper, the feasibility of the same polarization discrimination for locking multimode beams from broad area diode lasers. The resonator is designed to mitigate the loss from smile effect by using retro-reflection feedback in the cavity. In a 980 nm diode array, we produced 7.2 W coherent output with M2 of 1.5x11.5. The brightness of the diode is improved by more than an order of magnitude.

  7. Electromagnetic wave analogue of electronic diode

    OpenAIRE

    Shadrivov, Ilya V.; Powell, David A.; Kivshar, Yuri S.; Fedotov, Vassili A.; Zheludev, Nikolay I.

    2010-01-01

    An electronic diode is a nonlinear semiconductor circuit component that allows conduction of electrical current in one direction only. A component with similar functionality for electromagnetic waves, an electromagnetic isolator, is based on the Faraday effect of the polarization state rotation and is also a key component of optical and microwave systems. Here we demonstrate a chiral electromagnetic diode, which is a direct analogue of an electronic diode: its functionality is underpinned by ...

  8. Electromagnetic wave analogue of electronic diode

    OpenAIRE

    Shadrivov, Ilya V.; Powell, David A.; Kivshar, Yuri S.; Fedotov, Vassili A.; Zheludev, Nikolay I.

    2010-01-01

    An electronic diode is a nonlinear semiconductor circuit component that allows conduction of electrical current in one direction only. A component with similar functionality for electromagnetic waves, an electromagnetic isolator, is based on the Faraday effect of the polarization state rotation and is also a key component of optical and microwave systems. Here we demonstrate a chiral electromagnetic diode, which is a direct analogue of an electronic diode: its functionality is underpinned by ...

  9. Physics and Applications of Laser Diode Chaos

    CERN Document Server

    Sciamanna, Marc

    2015-01-01

    An overview of chaos in laser diodes is provided which surveys experimental achievements in the area and explains the theory behind the phenomenon. The fundamental physics underpinning this behaviour and also the opportunities for harnessing laser diode chaos for potential applications are discussed. The availability and ease of operation of laser diodes, in a wide range of configurations, make them a convenient test-bed for exploring basic aspects of nonlinear and chaotic dynamics. It also makes them attractive for practical tasks, such as chaos-based secure communications and random number generation. Avenues for future research and development of chaotic laser diodes are also identified.

  10. Effects of radiation on laser diodes.

    Energy Technology Data Exchange (ETDEWEB)

    Phifer, Carol Celeste

    2004-09-01

    The effects of ionizing and neutron radiation on the characteristics and performance of laser diodes are reviewed, and the formation mechanisms for nonradiative recombination centers, the primary type of radiation damage in laser diodes, are discussed. Additional topics include the detrimental effects of aluminum in the active (lasing) volume, the transient effects of high-dose-rate pulses of ionizing radiation, and a summary of ways to improve the radiation hardness of laser diodes. Radiation effects on laser diodes emitting in the wavelength region around 808 nm are emphasized.

  11. Advances in high power semiconductor diode lasers

    Science.gov (United States)

    Ma, Xiaoyu; Zhong, Li

    2008-03-01

    High power semiconductor lasers have broad applications in the fields of military and industry. Recent advances in high power semiconductor lasers are reviewed mainly in two aspects: improvements of diode lasers performance and optimization of packaging architectures of diode laser bars. Factors which determine the performance of diode lasers, such as power conversion efficiency, temperature of operation, reliability, wavelength stabilization etc., result from a combination of new semiconductor materials, new diode structures, careful material processing of bars. The latest progress of today's high-power diode lasers at home and abroad is briefly discussed and typical data are presented. The packaging process is of decisive importance for the applicability of high-power diode laser bars, not only technically but also economically. The packaging techniques include the material choosing and the structure optimizing of heat-sinks, the bonding between the array and the heat-sink, the cooling and the fiber coupling, etc. The status of packaging techniques is stressed. There are basically three different diode package architectural options according to the integration grade. Since the package design is dominated by the cooling aspect, different effective cooling techniques are promoted by different package architectures and specific demands. The benefit and utility of each package are strongly dependent upon the fundamental optoelectronic properties of the individual diode laser bars. Factors which influence these properties are outlined and comparisons of packaging approaches for these materials are made. Modularity of package for special application requirements is an important developing tendency for high power diode lasers.

  12. Nonlinear optics in germanium mid-infrared fiber material: Detuning oscillations in femtosecond mid-infrared spectroscopy

    Directory of Open Access Journals (Sweden)

    M. Ordu

    2017-09-01

    Full Text Available Germanium optical fibers hold great promise in extending semiconductor photonics into the fundamentally important mid-infrared region of the electromagnetic spectrum. The demonstration of nonlinear response in fabricated Ge fiber samples is a key step in the development of mid-infrared fiber materials. Here we report the observation of detuning oscillations in a germanium fiber in the mid-infrared region using femtosecond dispersed pump-probe spectroscopy. Detuning oscillations are observed in the frequency-resolved response when mid-infrared pump and probe pulses are overlapped in a fiber segment. The oscillations arise from the nonlinear frequency resolved nonlinear (χ(3 response in the germanium semiconductor. Our work represents the first observation of coherent oscillations in the emerging field of germanium mid-infrared fiber optics.

  13. Aerosol assisted chemical vapour deposition of germanium thin films using organogermanium carboxylates as precursors and formation of germania films

    Indian Academy of Sciences (India)

    Alpa Y Shah; Amey Wadawale; Vijaykumar S Sagoria; Vimal K Jain; C A Betty; S Bhattacharya

    2012-06-01

    Diethyl germanium bis-picolinate, [Et2Ge(O2CC5H4N)2], and trimethyl germanium quinaldate, [Me3Ge(O2CC9H6N)], have been used as precursors for deposition of thin films of germanium by aerosol assisted chemical vapour deposition (AACVD). The thermogravimetric analysis revealed complete volatilization of complexes under nitrogen atmosphere. Germanium thin films were deposited on silicon wafers at 700°C employing AACVD method. These films on oxidation under an oxygen atmosphere at 600°C yield GeO2. Both Ge and GeO2 films were characterized by XRD, SEM and EDS measurements. Their electrical properties were assessed by current–voltage (–) characterization.

  14. Rare earth elements in germanium-bearing coal seams of the Spetsugli deposit (Primor'e Region, Russia)

    Energy Technology Data Exchange (ETDEWEB)

    Seredin, V.V. [Russian Academy of Science, Moscow (Russian Federation)

    2005-06-01

    The paper presents first data on contents of lanthanoids and yttrium in germanium-bearing beds of the Spetsugli deposit, which vary along sampled cross sections from 86 to 316 ppm. It is shown that germanium-bearing coals are strongly enriched in yttrium and heavy lanthanoids as compared with coals located beyond the zone of germanium mineralization and with germanium-bearing coals of the Lincang deposit (South China). Vertical and lateral variations in REE concentrations and in REE patterns in germanium-bearing beds located at different hypsometric levels and different distances from supposed feeding channels of germanium-bearing solutions are considered. The REE distributions through beds show no correlation between REE and Ge contents. This is explained by diverse REE sources (granites of the basement and hydrothermal solutions of two generations) and by the different age of their accumulations in beds of the Spetsugli deposit. Reconstruction of the initial REE composition in germanium-bearing solutions circulating through coal-bearing formations during the Miocene at the stage of organic matter diagenesis shows that they were characterized by low concentrations of these elements and were relatively enriched in Eu and HREE. Anomalously high REE contents established in germanium-bearing coals are of epigenetic origin and accumulated after the formation of Ge mineralization. They were deposited by metalliferous REE-enriched and Ge-free or Ge-poor solutions of volcanic origin that circulated during the Pliocene-Early Quaternary time. In this regard, the Spetsugli deposit differs notably from the Lincang Ge-bearing coal deposit (South China), where the late epigenetic ore-formation stage probably did not take place.

  15. Effect of thermal treatment on the characteristics of iridium Schottky barrier diodes on n-Ge (1 0 0)

    Energy Technology Data Exchange (ETDEWEB)

    Chawanda, A., E-mail: albert.chawanda@up.ac.za [Department of Physics, University of Pretoria, 0002 (South Africa); Department of Physics, Midlands State University, Bag 9055, Gweru (Zimbabwe); Coelho, S.M.M.; Auret, F.D.; Mtangi, W. [Department of Physics, University of Pretoria, 0002 (South Africa); Nyamhere, C. [Department of Physics, Nelson Mandela Metropolitan University, Box 77000, Port Elizabeth 6031 (South Africa); Nel, J.M.; Diale, M. [Department of Physics, University of Pretoria, 0002 (South Africa)

    2012-02-05

    Highlights: Black-Right-Pointing-Pointer Ir/n-Ge (1 0 0) Schottky diodes were characterized using I-V, C-V and SEM techniques under various annealing conditions. Black-Right-Pointing-Pointer The variation of the electrical and structural properties can be due to effects phase transformation during annealing. Black-Right-Pointing-Pointer Thermal stability of these diodes is maintained up to 500 Degree-Sign C anneal. Black-Right-Pointing-Pointer SEM results depicts that the onset temperature for agglomeration in 20 nm Ir/n-Ge (1 0 0) system occurs between 600 and 700 Degree-Sign C. - Abstract: Iridium (Ir) Schottky barrier diodes were deposited on bulk grown (1 0 0) Sb-doped n-type germanium by using the electron beam deposition system. Electrical characterization of these contacts using current-voltage (I-V) and capacitance-voltage (C-V) measurements was performed under various annealing conditions. The variation of the electrical properties of these Schottky diodes can be attributed to combined effects of interfacial reaction and phase transformation during the annealing process. Thermal stability of the Ir/n-Ge (1 0 0) was observed up to annealing temperature of 500 Degree-Sign C. Furthermore, structural characterization of these samples was performed by using a scanning electron microscopy (SEM) at different annealing temperatures. Results have also revealed that the onset temperature for agglomeration in a 20 nm Ir/n-Ge (1 0 0) system occurs between 600 and 700 Degree-Sign C.

  16. Development of segmented germanium detectors for neutrinoless double beta decay experiments

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Jing

    2009-06-09

    The results from neutrino oscillation experiments indicate that at least two neutrinos have mass. However, the value of the masses and whether neutrinos and anti-neutrinos are identical, i.e., Majorana particles, remain unknown. Neutrinoless double beta decay experiments can help to improve our understanding in both cases and are the only method currently possible to tackle the second question. The GERmanium Detector Array (GERDA) experiment, which will search for the neutrinoless double beta decay of {sup 76}Ge, is currently under construction in Hall A of the INFN Gran Sasso National Laboratory (LNGS), Italy. In order to achieve an extremely low background level, segmented germanium detectors are considered to be operated directly in liquid argon which serves simultaneously as cooling and shielding medium. Several test cryostats were built at the Max-Planck-Institut fuer Physik in Muenchen to operate segmented germanium detectors both in vacuum and submerged in cryogenic liquid. The performance and the background discrimination power of segmented germanium detectors were studied in detail. It was proven for the first time that segmented germanium detectors can be operated stably over long periods submerged in a cryogenic liquid. It was confirmed that the segmentation scheme employed does well in the identification of photon induced background and demonstrated for the first time that also neutron interactions can be identified. The C++ Monte Carlo framework, MaGe (Majorana-GERDA), is a joint development of the Majorana and GERDA collaborations. It is based on GEANT4, but tailored especially to simulate the response of ultra-low background detectors to ionizing radiation. The predictions of the simulation were veri ed to be accurate for a wide range of conditions. Some shortcomings were found and corrected. Pulse shape analysis is complementary to segmentation in identifying background events. Its efficiency can only be correctly determined using reliable pulse

  17. Dramatic Changes in Thermoelectric Power of Germanium under Pressure: Printing n–p Junctions by Applied Stress

    Science.gov (United States)

    Korobeinikov, Igor V.; Morozova, Natalia V.; Shchennikov, Vladimir V.; Ovsyannikov, Sergey V.

    2017-03-01

    Controlled tuning the electrical, optical, magnetic, mechanical and other characteristics of the leading semiconducting materials is one of the primary technological challenges. Here, we demonstrate that the electronic transport properties of conventional single-crystalline wafers of germanium may be dramatically tuned by application of moderate pressures. We investigated the thermoelectric power (Seebeck coefficient) of p– and n–type germanium under high pressure to 20 GPa. We established that an applied pressure of several GPa drastically shifts the electrical conduction to p–type. The p–type conduction is conserved across the semiconductor-metal phase transition at near 10 GPa. Upon pressure releasing, germanium transformed to a metastable st12 phase (Ge-III) with n–type semiconducting conductivity. We proposed that the unusual electronic properties of germanium in the original cubic-diamond-structured phase could result from a splitting of the “heavy” and “light” holes bands, and a related charge transfer between them. We suggested new innovative applications of germanium, e.g., in technologies of printing of n–p and n–p–n junctions by applied stress. Thus, our work has uncovered a new face of germanium as a ‘smart’ material.

  18. 1.9% bi-axial tensile strain in thick germanium suspended membranes fabricated in optical germanium-on-insulator substrates for laser applications

    Science.gov (United States)

    Gassenq, A.; Guilloy, K.; Osvaldo Dias, G.; Pauc, N.; Rouchon, D.; Hartmann, J.-M.; Widiez, J.; Tardif, S.; Rieutord, F.; Escalante, J.; Duchemin, I.; Niquet, Y.-M.; Geiger, R.; Zabel, T.; Sigg, H.; Faist, J.; Chelnokov, A.; Reboud, V.; Calvo, V.

    2015-11-01

    High tensile strains in Ge are currently studied for the development of integrated laser sources on Si. In this work, we developed specific Germanium-On-Insulator 200 mm wafer to improve tolerance to high strains induced via shaping of the Ge layers into micro-bridges. Building on the high crystalline quality, we demonstrate bi-axial tensile strain of 1.9%, which is currently the highest reported value measured in thick (350 nm) Ge layer. Since this strain is generally considered as the onset of the direct bandgap in Ge, our realization paves the way towards mid-infrared lasers fully compatible with CMOS fab technology.

  19. Destructive Single-Event Effects in Diodes

    Science.gov (United States)

    Casey, Megan C.; Lauenstein, Jean-Marie; Campola, Michael J.; Wilcox, Edward P.; Phan, Anthony M.; Label, Kenneth A.

    2017-01-01

    In this work, we discuss the observed single-event effects in a variety of types of diodes. In addition, we conduct failure analysis on several Schottky diodes that were heavy-ion irradiated. High- and low-magnitude optical microscope images, infrared camera images, and scanning electron microscope images are used to identify and describe the failure locations.

  20. Materials for diode pumped solid state lasers

    Science.gov (United States)

    Chase, L. L.; Davis, L. E.; Krupke, W. F.; Payne, S. A.

    1991-07-01

    The advantages of semiconductor diode lasers and laser arrays as pump sources for solid state lasers are reviewed. The properties that are desirable in solid state laser media for various diode pumping applications are discussed, and the characteristics of several promising media are summarized.

  1. Temperature dependence of commercially available diode detectors.

    Science.gov (United States)

    Saini, Amarjit S; Zhu, Timothy C

    2002-04-01

    Temperature dependence of commercially available n- and p-type diodes were studied experimentally under both high instantaneous dose rate (pulsed) and low dose rate (continuous) radiation. The sensitivity versus temperature was measured at SSD = 80 or 100 cm, 10 x 10 cm2, and 5 cm depth in a 30 x 30 x 30 cm3 water phantom between 10 degrees C and 35 degrees C. The response was linear for all the diode detectors. The temperature coefficient (or sensitivity variation with temperature, svwt) was dose rate independent for preirradiated diodes. They were (0.30 +/- 0.01)%/degrees C, (0.36 +/- 0.03)%/degrees C, and (0.29 +/- 0.08)%/degrees C for QED p-type, EDP p-type, and Isorad n-type diodes, respectively. The temperature coefficient for unirradiated n-type diodes was different under low dose rate [(0.16 to 0.45)%/degrees C, continuous, cobalt] and high instantaneous dose rate [(0.07 +/- 0.02)%/degrees C, pulsed radiation]. Moreover, the temperature coefficient varies among individual diodes. Similarly, the temperature coefficient for a special unirradiated QED p-type diode was different under low dose rate (0.34%/degrees C, cobalt) and high instantaneous dose rate [(0.26 +/- 0.01)%/degrees C, pulsed radiation]. Sufficient preirradiation can eliminate dose rate dependence of the temperature coefficient. On the contrary, preirradiation cannot eliminate dose rate dependence of the diode sensitivity itself.

  2. Hybrid Co-deposition of Mixed-Valent Molybdenum-Germanium Oxides (MoxGeyOz): A Route to Tunable Optical Transmission (Postprint)

    Science.gov (United States)

    2015-08-05

    ultraviolet– visible -near-infrared optical spectrophotometry ( UV –Vis–NIR). Structural properties of the as-deposited MoxGeyOz films, including roughness...photoelectron spectroscopy . 15. SUBJECT TERMS Magnetron sputtering, Ellipsometry, X-ray photoelectron spectroscopy , Mixed oxides, Germanium oxide...photoelectron spectroscopy Mixed oxides Germanium oxide Molybdenum oxide Thin film Optical characterizationMixed-valent oxides of molybdenum and germanium

  3. GIOVE: a new detector setup for high sensitivity germanium spectroscopy at shallow depth

    Energy Technology Data Exchange (ETDEWEB)

    Heusser, G., E-mail: gerd.heusser@mpi-hd.mpg.de; Weber, M., E-mail: marc.weber@mpi-hd.mpg.de; Hakenmüller, J. [Max-Planck-Institut für Kernphysik, Saupfercheckweg 1, 69117, Heidelberg (Germany); Laubenstein, M. [Laboratori Nazionali del Gran Sasso, Via G. Acitelli 22, 67100, Assergi, AQ (Italy); Lindner, M.; Maneschg, W.; Simgen, H.; Stolzenburg, D.; Strecker, H. [Max-Planck-Institut für Kernphysik, Saupfercheckweg 1, 69117, Heidelberg (Germany)

    2015-11-09

    We report on the development and construction of the high-purity germanium spectrometer setup GIOVE (Germanium Inner Outer VEto), recently built and now operated at the shallow underground laboratory of the Max-Planck-Institut für Kernphysik, Heidelberg. Particular attention was paid to the design of a novel passive and active shield, aiming at efficient rejection of environmental and muon induced radiation backgrounds. The achieved sensitivity level of ≤100 μBq kg{sup -1} for primordial radionuclides from U and Th in typical γ ray sample screening measurements is unique among instruments located at comparably shallow depths and can compete with instruments at far deeper underground sites.

  4. Catalytic conversion of carbohydrates into 5-hydroxymethylfurfural by germanium(IV) chloride in ionic liquids.

    Science.gov (United States)

    Zhang, Zehui; Wang, Qian; Xie, Haibo; Liu, Wujun; Zhao, Zongbao Kent

    2011-01-17

    Direct conversion of carbohydrates into 5-hydroxymethylfurfural (HMF) catalyzed by germanium(IV) chloride in ionic liquids has been investigated in search of an efficient and environmentally friendly process. Monosaccharides D-fructose and D-glucose, disaccharides sucrose and maltose, and even the polysaccharide cellulose were successfully converted into HMF with good yields under mild conditions (yield up to 92 % in 5 min in the case of fructose). The structure of ionic liquids, catalyst loading, reaction temperature and water content had noticeable effects on this catalytic system. Addition of 5 Å molecular sieves during the dehydration of glucose resulted in an increase in HMF yield from 38.4 % to 48.4 %. A mechanism for glucose conversion to HMF catalyzed by germanium(IV) chloride was proposed according to ¹³C NMR spectra obtained in situ under different conditions using D-glucose-2-¹³C as the substrate.

  5. Cosmogenic activation of Germanium and its reduction for low background experiments

    CERN Document Server

    Barabanov, I; Bezrukov, L; Denisov, A; Kornoukhov, V; Sobolevsky, N

    2006-01-01

    Production of $^{60}$Co and $^{68}$Ge from stable isotopes of Germanium by nuclear active component of cosmic rays is a principal background source for a new generation of $^{76}$Ge double beta decay experiments like GERDA and Majorana. The biggest amount of cosmogenic activity is expected to be produced during transportation of either enriched material or already grown crystal. In this letter properties and feasibility of a movable iron shield are discussed. Activation reduction factor of about 10 is predicted by simulations with SHIELD code for a simple cylindrical configuration. It is sufficient for GERDA Phase II background requirements. Possibility of further increase of reduction factor and physical limitations are considered. Importance of activation reduction during Germanium purification and detector manufacturing is emphasized.

  6. Amorphous Silicon-Germanium Films with Embedded Nanocrystals for Thermal Detectors with Very High Sensitivity

    Directory of Open Access Journals (Sweden)

    Cesar Calleja

    2016-01-01

    Full Text Available We have optimized the deposition conditions of amorphous silicon-germanium films with embedded nanocrystals in a plasma enhanced chemical vapor deposition (PECVD reactor, working at a standard frequency of 13.56 MHz. The objective was to produce films with very large Temperature Coefficient of Resistance (TCR, which is a signature of the sensitivity in thermal detectors (microbolometers. Morphological, electrical, and optical characterization were performed in the films, and we found optimal conditions for obtaining films with very high values of thermal coefficient of resistance (TCR = 7.9% K−1. Our results show that amorphous silicon-germanium films with embedded nanocrystals can be used as thermosensitive films in high performance infrared focal plane arrays (IRFPAs used in commercial thermal cameras.

  7. A Low-Noise Germanium Ionization Spectrometer for Low-Background Science

    Energy Technology Data Exchange (ETDEWEB)

    Aalseth, Craig E.; Colaresi, Jim; Collar, Juan I.; Fast, James E.; Hossbach, Todd W.; Orrell, John L.; Overman, Cory T.; Scholz, Bjorn; Vandevender, Brent A.; Yocum, K. Michael

    2016-12-01

    Recent progress on the development of very low energy threshold high purity germanium ionization spectrometers has produced an instrument of 1.2 kg mass and excellent noise performance. The detector was installed in a low-background cryostat intended for use in a low mass, WIMP dark matter direct detection search. The integrated detector and low background cryostat achieved noise performance of 98 eV full-width half-maximum of an input electronic pulse generator peak and gamma-ray energy resolution of 1.9 keV full-width half-maximum at the 60Co gamma-ray energy of 1332 keV. This Transaction reports the thermal characterization of the low-background cryostat, specifications of the newly prepared 1.2 kg p-type point contact germanium detector, and the ionization spectroscopy – energy resolution and energy threshold – performance of the integrated system.

  8. Modelling the structure factors and pair distribution functions of amorphous germanium, silicon and carbon

    Energy Technology Data Exchange (ETDEWEB)

    Dalgic, Seyfettin; Gonzalez, Luis Enrique; Baer, Shalom; Silbert, Moises

    2002-12-01

    We present the results of calculations of the static structure factor S(k) and the pair distribution function g(r) of the tetrahedral amorphous semiconductors germanium, silicon and carbon using the structural diffusion model (SDM). The results obtained with the SDM for S(k) and g(r) are of comparable quality with those obtained by the unconstrained Reverse Monte Carlo simulations and existing ab initio molecular dynamics simulations for these systems. We have found that g(r) exhibits a small peak, or shoulder, a weak remnant of the prominent third neighbour peak present in the crystalline phase of these systems. This feature has been experimentally found to be present in recently reported high energy X-ray experiments of amorphous silicon (Phys. Rev. B 60 (1999) 13520), as well as in the previous X-ray diffraction of as-evaporated amorphous germanium (Phys. Rev. B 50 (1994) 539)

  9. Schottky contacts in germanium nanowire network devices synthesized from nickel seeds

    Science.gov (United States)

    Gouveia, R. C.; Rodrigues, A. D.; Leite, E. R.; Chiquito, A. J.

    2016-10-01

    This paper presents reliable process to the synthesis of germanium nanowires by the vapor-liquid-solid method using nickel as an alternative catalyst to gold, the most commonly used metal, without toxic gas precursors. The structural study showed single-crystalline germanium nanowires with diamond structure, lengths of tens of microns and diameters smaller than 40 nm. The reduced dimensions of the nanowires led to phonons localization effect, with correlation lengths of the same order of the nanowires diameters. Additionally, the analysis of electronic properties of metal-nanowire-metal devices indicated the presence of Schottky barriers, whose values depend linearly on temperature. This linear dependence was assigned to the tunneling process through an insulator layer (mostly GeOx) at the metal-semiconductor interface. These results point to the existence of another channel for electrons transference from metal to semiconductor being very significant to electronic devices fabrication.

  10. Volume reflection and channeling of ultrarelativistic protons in germanium bent single crystals

    CERN Document Server

    Bellucci, S

    2016-01-01

    The paper devoted to investigation of volume reflection and channeling processes of ultrarela- tivistic positive charged particles moving in germanium single crystals. We demonstrate that the choice of atomic potential on the basis of Hartree-Fock method and correct choice of Debye tem- perature allow us to describe the above mentioned processes in a good agreement with the recent experiments. Moreover, the presented in the paper universal form of equations for volume reflection gives true description of the process at a wide range of particle energies. Standing on this study we make predictions for mean angle reflection (as a function of bending radius) of positive and negative particles for germanium (110) and (111) crystallographic planes.

  11. Flexible photodetectors on plastic substrates by use of printing transferred single-crystal germanium membranes

    Science.gov (United States)

    Yuan, Hao-Chih; Shin, Jonghyun; Qin, Guoxuan; Sun, Lei; Bhattacharya, Pallab; Lagally, Max G.; Celler, George K.; Ma, Zhenqiang

    2009-01-01

    This letter presents studies of multiwavelength flexible photodetectors on a plastic substrate by use of printing transferred single-crystal germanium (Ge) membranes. Ge membranes of 250nm thickness with selectively ion-implantation doped regions were released from a germanium-on-insulator substrate and integrated with a 175-μm-thick polyethylene terephthalate substrate via a dry printing technique. Photodiodes configured in lateral p-i-n configuration using the flexible Ge membranes with an intrinsic region width of 10μm exhibit an external quantum efficiency that varies from 5% at 411nm to 42% at 633nm under -1V bias condition. These results demonstrate the potential of utilizing single-crystal Ge-membrane photodiodes for imaging applications and as solar cells on objects with arbitrary curvatures and shapes.

  12. The impact of radiation on semiconducting characteristics of monocrystalline silicon and germanium

    Directory of Open Access Journals (Sweden)

    Obrenović Marija D.

    2016-01-01

    Full Text Available The paper examines the effects of radiation on the electrical characteristics of monocrystalline silicon and germanium. Samples of monocrystalline silicon and germanium are irradiated under controlled laboratory conditions in the field of neutron, X- and g-radiation. Change of the samples' specific resistance was measured dependent on the radiation dose with the type of radiation as a parameter. Next, the dependence of the samples resistance on temperature was recorded (in the impurities region and in intrinsic region with the previously absorbed dose as a parameter. The results were statistically analyzed and explained on the basis of radiation effects in solids. The results are compared with those obtained by using Monte Carlo method. A good agreement was confirmed by the mentioned experimental investigation. [Projekat Ministarstva nauke Republike Srbije, br. 171007

  13. Volume reflection and channeling of ultrarelativistic protons in germanium bent single crystals

    Directory of Open Access Journals (Sweden)

    S. Bellucci

    2016-12-01

    Full Text Available The paper is devoted to the investigation of volume reflection and channeling processes of ultrarelativistic positive charged particles moving in germanium single crystals. We demonstrate that the choice of atomic potential on the basis of the Hartree-Fock method and the correct choice of the Debye temperature allow us to describe the above mentioned processes in a good agreement with the recent experiments. Moreover, the universal form of equations for volume reflection presented in the paper gives a true description of the process at a wide range of particle energies. Standing on this study we make predictions for the mean angle reflection (as a function of the bending radius of positive and negative particles for germanium (110 and (111 crystallographic planes.

  14. Numerical evaluation of Auger recombination coefficients in relaxed and strained germanium

    Science.gov (United States)

    Dominici, Stefano; Wen, Hanqing; Bertazzi, Francesco; Goano, Michele; Bellotti, Enrico

    2016-05-01

    The potential applications of germanium and its alloys in infrared silicon-based photonics have led to a renewed interest in their optical properties. In this letter, we report on the numerical determination of Auger coefficients at T = 300 K for relaxed and biaxially strained germanium. We use a Green's function based model that takes into account all relevant direct and phonon-assisted processes and perform calculations up to a strain level corresponding to the transition from indirect to direct energy gap. We have considered excess carrier concentrations ranging from 1016 cm-3 to 5 × 1019 cm-3. For use in device level simulations, we also provide fitting formulas for the calculated electron and hole Auger coefficients as functions of carrier density.

  15. Dissolution chemistry and biocompatibility of silicon- and germanium-based semiconductors for transient electronics.

    Science.gov (United States)

    Kang, Seung-Kyun; Park, Gayoung; Kim, Kyungmin; Hwang, Suk-Won; Cheng, Huanyu; Shin, Jiho; Chung, Sangjin; Kim, Minjin; Yin, Lan; Lee, Jeong Chul; Lee, Kyung-Mi; Rogers, John A

    2015-05-01

    Semiconducting materials are central to the development of high-performance electronics that are capable of dissolving completely when immersed in aqueous solutions, groundwater, or biofluids, for applications in temporary biomedical implants, environmentally degradable sensors, and other systems. The results reported here include comprehensive studies of the dissolution by hydrolysis of polycrystalline silicon, amorphous silicon, silicon-germanium, and germanium in aqueous solutions of various pH values and temperatures. In vitro cellular toxicity evaluations demonstrate the biocompatibility of the materials and end products of dissolution, thereby supporting their potential for use in biodegradable electronics. A fully dissolvable thin-film solar cell illustrates the ability to integrate these semiconductors into functional systems.

  16. Silicon and germanium nanoparticles with tailored surface chemistry as novel inorganic fiber brightening agents.

    Science.gov (United States)

    Deb-Choudhury, Santanu; Prabakar, Sujay; Krsinic, Gail; Dyer, Jolon M; Tilley, Richard D

    2013-07-31

    Low-molecular-weight organic molecules, such as coumarins and stilbenes, are used commercially as fluorescent whitening agents (FWAs) to mask photoyellowing and to brighten colors in fabrics. FWAs achieve this by radiating extra blue light, thus changing the hue and also adding to the brightness. However, organic FWAs can rapidly photodegrade in the presence of ultraviolet (UV) radiation, exacerbating the yellowing process through a reaction involving singlet oxygen species. Inorganic nanoparticles, on the other hand, can provide a similar brightening effect with the added advantage of photostability. We report a targeted approach in designing new inorganic silicon- and germanium-based nanoparticles, functionalized with hydrophilic (amine) surface terminations as novel inorganic FWAs. When applied on wool, by incorporation in a sol-gel Si matrix, the inorganic FWAs improved brightness properties, demonstrated enhanced photostability toward UV radiation, especially the germanium nanoparticles, and also generated considerably lower levels of reactive oxygen species compared to a commercial stilbene-based organic FWA, Uvitex NFW.

  17. Empirical Correction of Crosstalk in a Low-Background Germanium γ–γ Analysis System

    Energy Technology Data Exchange (ETDEWEB)

    Keillor, Martin E.; Erikson, Luke E.; Aalseth, Craig E.; Day, Anthony R.; Fuller, Erin S.; Glasgow, Brian D.; Hoppe, Eric W.; Hossbach, Todd W.; Mizouni, Leila K.; Myers, Allan W.; Overman, Cory T.; Seifert, Allen; Stavenger, Timothy J.

    2013-05-01

    ABSTRACT The Pacific Northwest National Laboratory is currently developing a custom software suite capable of automating many of the tasks required to accurately analyze coincident signals within gamma spectrometer arrays. During the course of this work, significant crosstalk was identified in the energy determination for spectra collected with a new low-background intrinsic germanium (HPGe) array at PNNL. The HPGe array is designed for high detection efficiency, ultra-low-background performance, and sensitive gamma gamma coincidence detection. The first half of the array, a single cryostat containing 7 HPGe crystals, was recently installed into a new shallow underground laboratory facility. This update will present a brief review of the germanium array, describe the observed crosstalk, and present a straight-forward empirical correction that significantly reduces the impact of this crosstalk on the spectroscopic performance of the system.

  18. Analog Readout and Analysis Software for the Ultra-High Rate Germanium (UHRGe) Project

    Energy Technology Data Exchange (ETDEWEB)

    Fast, James E.; Aguayo Navarrete, Estanislao; Evans, Allan T.; VanDevender, Brent A.; Rodriguez, Douglas C.; Wood, Lynn S.

    2011-09-01

    High-resolution high-purity germanium (HPGe) spectrometers are needed for Safeguards applications such as spent fuel assay and uranium hexafluoride cylinder verification. In addition, these spectrometers would be applicable to other high-rate applications such as non-destructive assay of nuclear materials using nuclear resonance fluorescence. Count-rate limitations of today's HPGe technologies, however, lead to concessions in their use and reduction in their efficacy. Large-volume, very high-rate HPGe spectrometers are needed to enable a new generation of nondestructive assay systems. The Ultra-High Rate Germanium (UHRGe) project is developing HPGe spectrometer systems capable of operating at unprecedented rates, 10 to 100 times those available today. This report documents current status of developments in the analog electronics and analysis software.

  19. Electromagnetic wave analogue of electronic diode

    CERN Document Server

    Shadrivov, Ilya V; Kivshar, Yuri S; Fedotov, Vassili A; Zheludev, Nikolay I

    2010-01-01

    An electronic diode is a nonlinear semiconductor circuit component that allows conduction of electrical current in one direction only. A component with similar functionality for electromagnetic waves, an electromagnetic isolator, is based on the Faraday effect of the polarization state rotation and is also a key component of optical and microwave systems. Here we demonstrate a chiral electromagnetic diode, which is a direct analogue of an electronic diode: its functionality is underpinned by an extraordinary strong nonlinear wave propagation effect in the same way as electronic diode function is provided by a nonlinear current characteristic of a semiconductor junction. The effect exploited in this new electromagnetic diode is an intensity-dependent polarization change in an artificial chiral metamolecule. This microwave effect exceeds a similar optical effect previously observed in natural crystals by more than 12 orders of magnitude and a direction-dependent transmission that differing by a factor of 65.

  20. Laser diode package with enhanced cooling

    Science.gov (United States)

    Deri, Robert J.; Kotovsky, Jack; Spadaccini, Christopher M.

    2011-09-13

    A laser diode package assembly includes a reservoir filled with a fusible metal in close proximity to a laser diode. The fusible metal absorbs heat from the laser diode and undergoes a phase change from solid to liquid during the operation of the laser. The metal absorbs heat during the phase transition. Once the laser diode is turned off, the liquid metal cools off and resolidifies. The reservoir is designed such that that the liquid metal does not leave the reservoir even when in liquid state. The laser diode assembly further includes a lid with one or more fin structures that extend into the reservoir and are in contact with the metal in the reservoir.

  1. Neutrino and dark matter physics with sub-keV germanium detectors

    Indian Academy of Sciences (India)

    Arun Kumar Soma; Lakhwinder Singh; Manoj Kumar Singh; Venktesh Singh; Henry T Wong; on behalf of the TEXONO Collaboration

    2014-11-01

    Germanium detectors with sub-keV sensitivities open a window to study neutrino physics to search for light weakly interacting massive particle (WIMP) dark matter. We summarize the recent results on spin-independent couplings of light WIMPs from the TEXONO experiment at the Kuo-Sheng Reactor Neutrino Laboratory. Highlights of the physics motivation, our R&D programme, as well as the status and plans are presented.

  2. Neutron Transmutation Doped (NTD) germanium thermistors for sub-mm bolometer applications

    Science.gov (United States)

    Haller, E. E.; Itoh, K. M.; Beeman, J. W.

    1996-01-01

    Recent advances in the development of neutron transmutation doped (NTD) semiconductor thermistors fabricated from natural and controlled isotopic composition germanium are reported. The near ideal doping uniformity that can be achieved with the NTD process, the device simplicity of NTD Ge thermistors and the high performance of cooled junction field effect transistor preamplifiers led to the widespread acceptance of these thermal sensors in ground-based, airborne and spaceborne radio telescopes. These features made possible the development of efficient bolometer arrays.

  3. Development of a one-dimensional microstrip germanium detector for Compton scattering experiment at SPring-8

    CERN Document Server

    Toyokawa, H; Mizumaki, M; Sakurai, Y; Suzuki, M; Hiraoka, N; Sakai, N

    2001-01-01

    Two prototypes of a one-dimensional microstrip germanium detector were fabricated with seven strips, having different pitches of 200 and 350 mu m. Owing to its insensitivity to hole-diffusion process, the latter one has attained a spatial resolution as high as 350 mu m, an energy resolution better than 1.4%, and a peak efficiency around 50% at an X-ray energy of 80 keV.

  4. Influence of Uniaxial Stress on the Indirect Absorption Edge in Silicon and Germanium

    DEFF Research Database (Denmark)

    Balslev, I.

    1966-01-01

    The indirect optical absorption edge in silicon and germanium has been studied in the presence of shear strain. The splitting observed in the transmission spectrum is dependent on the direction and magnitude of the applied stress and on the polarization of the light with respect to the stress axi...... with uniaxial stress. A special experimental technique using a vibrating slit in the spectrometer was used in order to obtain an accurate determination of the fine structure in the absorption spectrum....

  5. Tunability of the dielectric function of heavily doped germanium thin films for mid-infrared plasmonics

    Science.gov (United States)

    Frigerio, Jacopo; Ballabio, Andrea; Isella, Giovanni; Sakat, Emilie; Pellegrini, Giovanni; Biagioni, Paolo; Bollani, Monica; Napolitani, Enrico; Manganelli, Costanza; Virgilio, Michele; Grupp, Alexander; Fischer, Marco P.; Brida, Daniele; Gallacher, Kevin; Paul, Douglas J.; Baldassarre, Leonetta; Calvani, Paolo; Giliberti, Valeria; Nucara, Alessandro; Ortolani, Michele

    2016-08-01

    Heavily doped semiconductor thin films are very promising for application in mid-infrared plasmonic devices because the real part of their dielectric function is negative and broadly tunable in the 5 to 50 μ m wavelength range at least. In this work, we investigate the electrodynamics of heavily n -type-doped germanium epilayers at infrared frequencies beyond the assumptions of the Drude model. The films are grown on silicon and germanium substrates, are in situ doped with phosphorous in the 1017 to 1019 cm-3 range, then screened plasma frequencies in the 100 to 1200 cm-1 range were observed. We employ infrared spectroscopy, pump-probe spectroscopy, and dc transport measurements to determine the tunability of the plasma frequency. Although no plasmonic structures have been realized in this work, we derive estimates of the decay time of mid-infrared plasmons and of their figures of merit for field confinement and for surface plasmon propagation. The average electron scattering rate increases almost linearly with excitation frequency, in agreement with quantum calculations based on a model of the ellipsoidal Fermi surface at the conduction band minimum of germanium accounting for electron scattering with optical phonons and charged impurities. Instead, we found weak dependence of plasmon losses on neutral impurity density. In films where a transient plasma was generated by optical pumping, we found significant dependence of the energy relaxation times in the few-picosecond range on the static doping level of the film, confirming the key but indirect role played by charged impurities in energy relaxation. Our results indicate that underdamped mid-infrared plasma oscillations are attained in n -type-doped germanium at room temperature.

  6. Pure germanium dioxide hollow-core fiber for transmitting CO2 laser

    Institute of Scientific and Technical Information of China (English)

    侯兰田; 付连符; 吕平; 韩玉华; 李秋更; 徐立宣; 李天柱

    1995-01-01

    A method of fabricating pure germanium dioxide hollow-core fibers has been introduced for the first time. The output power of the fabricated fiber can come to 18 W, with the transmission loss of 1.23 dB/m at 10.6 μm. The mechanism of transmitting CO2 laser by the fiber is analyzed, the transmitting loss is further discussed and its application fields are envisaged.

  7. A model for the effects of germanium on silica biomineralization in choanoflagellates

    OpenAIRE

    Marron, Alan O.; Chappell, Helen; Ratcliffe, Sarah; Goldstein, Raymond E.

    2016-01-01

    This is the final version of the article. It first appeared from Royal Society Publishing via http://dx.doi.org/10.1098/rsif.2016.0485 Silica biomineralization is a widespread phenomenon of major biotechnological interest. Modifying biosilica with substances like germanium (Ge) can confer useful new properties, although exposure to high levels of Ge disrupts normal biosilicification. No clear mechanism explains why this disruption occurs. Here, we study the effect of Ge on loricate choanof...

  8. Fibroblastic activities post implantation of cobalt chromium alloy and pure germanium in rabbits.

    Science.gov (United States)

    Carter, J M; Natiella, J R; Baier, R E; Natiella, R R

    1984-02-01

    Different preimplantation surface finishes were applied to surgical vitallium discs and germanium prisms implanted for 20 days within the back muscles of adult rabbits. Histopathologic analysis of the numbers of nuclei of active fibroblasts immediately adjacent to the implants was carried out. The mean apparent volume fractions (MAVF) for the subdermal implant sites were found to depend on the surface cleanliness of the implant, the cleanest or highest-surface-energy surfaces giving the highest MAVF values for active fibroblasts.

  9. Enhanced nonlinearity in photonic crystal fiber by germanium doping in the core region

    Institute of Scientific and Technical Information of China (English)

    Tingting Sun; Guiyun Kai; Zhi Wang; Shuzhong Yuan; Xiaoyi Dong

    2008-01-01

    Germanium doping in silica can be used as a method for nonlinearity enhancement.Properties of the enhanced nonlinearity in photonic crystal fiber(PCF)with a GeO2-doped core are investigated theoretically by using all-vector finite element method.Numerical result shows that the nonlinear coefficient of PCF is greatly enhanced with increasing doping concentration,furthermore,optimal radius of the doped region should be considered for the desired operating wavelength.

  10. Enhancement of electromagnetic showers initiated by ultrarelativistic electrons in aligned thick germanium crystals

    Science.gov (United States)

    Baurichter, A.; Mikkelsen, U.; Kirsebom, K.; Medenwaldt, R.; Møller, S.; Uggerhøj, E.; Worm, T.; Elsener, K.; Ballestrero, S.; Sona, P.; Romano, J.; Biino, C.; Moore, R.; Vilakazi, Z. Z.

    1996-10-01

    The distribution of the energy deposited in thin silicon detectors placed on the downstream side of a thick germanium single crystal bombarded with a 70, 150 and 250 GeV electron beam along directions close to the axis or {110} and {100} planes has been measured. The enhancement of the shower with respect to random incidence, as reflected in the higher value of the centroid of the distribution, is studied as a function of the incidence angle to the axis or plane.

  11. Doping of germanium by ion-implantation and laser annealing in the melting regime

    OpenAIRE

    Milazzo, Ruggero

    2015-01-01

    Germanium is the main candidate for replacing silicon in active regions in future complementary metal-oxide transistors due to: (i) its higher mobility of charge carriers that makes it able to attain higher drive current; (ii) the availability of high-k materials, excellent substitutes for its unstable native oxide and (iii) its lower melting point that allows lower processing temperatures. However, a downscaling beyond 15-nm necessarily requires higher doping levels (higher than 1x10^20cm^-3...

  12. Hermetic diode laser transmitter module

    Science.gov (United States)

    Ollila, Jyrki; Kautio, Kari; Vahakangas, Jouko; Hannula, Tapio; Kopola, Harri K.; Oikarinen, Jorma; Sivonen, Matti

    1999-04-01

    In very demanding optoelectronic sensor applications it is necessary to encapsulate semiconductor components hermetically in metal housings to ensure reliable operation of the sensor. In this paper we report on the development work to package a laser diode transmitter module for a time- off-light distance sensor application. The module consists of a lens, laser diode, electronic circuit and optomechanics. Specifications include high acceleration, -40....+75 degree(s)C temperature range, very low gas leakage and mass-production capability. We have applied solder glasses for sealing optical lenses and electrical leads hermetically into a metal case. The lens-metal case sealing has been made by using a special soldering glass preform preserving the optical quality of the lens. The metal housings are finally sealed in an inert atmosphere by welding. The assembly concept to retain excellent optical power and tight optical axis alignment specifications is described. The reliability of the laser modules manufactured has been extensively tested using different aging and environmental test procedures. Sealed packages achieve MIL- 883 standard requirements for gas leakage.

  13. Epitaxial Growth of Perovskite Strontium Titanate on Germanium via Atomic Layer Deposition.

    Science.gov (United States)

    Lin, Edward L; Edmondson, Bryce I; Hu, Shen; Ekerdt, John G

    2016-07-26

    Atomic layer deposition (ALD) is a commercially utilized deposition method for electronic materials. ALD growth of thin films offers thickness control and conformality by taking advantage of self-limiting reactions between vapor-phase precursors and the growing film. Perovskite oxides present potential for next-generation electronic materials, but to-date have mostly been deposited by physical methods. This work outlines a method for depositing SrTiO3 (STO) on germanium using ALD. Germanium has higher carrier mobilities than silicon and therefore offers an alternative semiconductor material with faster device operation. This method takes advantage of the instability of germanium's native oxide by using thermal deoxidation to clean and reconstruct the Ge (001) surface to the 2×1 structure. 2-nm thick, amorphous STO is then deposited by ALD. The STO film is annealed under ultra-high vacuum and crystallizes on the reconstructed Ge surface. Reflection high-energy electron diffraction (RHEED) is used during this annealing step to monitor the STO crystallization. The thin, crystalline layer of STO acts as a template for subsequent growth of STO that is crystalline as-grown, as confirmed by RHEED. In situ X-ray photoelectron spectroscopy is used to verify film stoichiometry before and after the annealing step, as well as after subsequent STO growth. This procedure provides framework for additional perovskite oxides to be deposited on semiconductors via chemical methods in addition to the integration of more sophisticated heterostructures already achievable by physical methods.

  14. Internal friction in intrinsic and n-type germanium and silicon

    Science.gov (United States)

    Gerk, A. P.; Williams, Wendell S.

    1982-05-01

    The dependence of the high-temperature internal friction of germanium and silicon, both intrinsic and highly n type, was measured as a function of temperature, frequency, dislocation density, and dopant concentration. An acoustoelectric peak in both germanium and silicon was detected and found to agree well with the theory of Weinreich. The high-temperature dislocation-dependent damping in intrinsic germanium and silicon was studied and seen to be consistent with most previous studies. If deformed at high temperature and allowed to anneal, highly doped n-type material behaved intrinsically due to preferential precipitation at dislocations; however, if deformed at moderate temperatures and not allowed to anneal, such crystals exhibited a greatly enhanced dislocation-dependent internal friction which depended on the extrinsic carrier concentration. A theory was developed for dislocation damping in semiconductors and was found to agree well with experimental results. The model is based upon electronic viscous damping of dislocations by excess current carriers whose lifetimes are controlled by Auger recombination processes.

  15. Novel germanium/polypyrrole composite for high power lithium-ion batteries.

    Science.gov (United States)

    Gao, Xuanwen; Luo, Wenbin; Zhong, Chao; Wexler, David; Chou, Shu-Lei; Liu, Hua-Kun; Shi, Zhicong; Chen, Guohua; Ozawa, Kiyoshi; Wang, Jia-Zhao

    2014-08-29

    Nano-Germanium/polypyrrole composite has been synthesized by chemical reduction method in aqueous solution. The Ge nanoparticles were directly coated on the surface of the polypyrrole. The morphology and structural properties of samples were determined by X-ray diffraction, scanning electron microscopy and transmission electron microscopy. Thermogravimetric analysis was carried out to determine the polypyrrole content. The electrochemical properties of the samples have been investigated and their suitability as anode materials for the lithium-ion battery was examined. The discharge capacity of the Ge nanoparticles calculated in the Ge-polypyrrole composite is 1014 mAh g(-1) after 50 cycles at 0.2 C rate, which is much higher than that of pristine germanium (439 mAh g(-1)). The composite also demonstrates high specific discharge capacities at different current rates (1318, 1032, 661, and 460 mAh g(-1) at 0.5, 1.0, 2.0, and 4.0 C, respectively). The superior electrochemical performance of Ge-polypyrrole composite could be attributed to the polypyrrole core, which provides an efficient transport pathway for electrons. SEM images of the electrodes have demonstrated that polypyrrole can also act as a conductive binder and alleviate the pulverization of electrode caused by the huge volume changes of the nanosized germanium particles during Li(+) intercalation/de-intercalation.

  16. Effect of normal processes on thermal conductivity of germanium, silicon and diamond

    Indian Academy of Sciences (India)

    Banashree Saikai; Anil Kumar

    2008-07-01

    The effect of normal scattering processes is considered to redistribute the phonon momentum in (a) the same phonon branch – KK-S model and (b) between different phonon branches – KK-H model. Simplified thermal conductivity relations are used to estimate the thermal conductivity of germanium, silicon and diamond with natural isotopes and highly enriched isotopes. It is observed that the consideration of the normal scattering processes involving different phonon branches gives better results for the temperature dependence of the thermal conductivity of germanium, silicon and diamond with natural and highly enriched isotopes. Also, the estimation of the lattice thermal conductivity of germanium and silicon for these models with the consideration of quadratic form of frequency dependences of phonon wave vector leads to the conclusion that the splitting of longitudinal and transverse phonon modes, as suggested by Holland, is not an essential requirement to explain the entire temperature dependence of lattice thermal conductivity whereas KK-H model gives a better estimation of the thermal conductivity without the splitting of the acoustic phonon modes due to the dispersive nature of the phonon dispersion curves.

  17. Effect of Ion Bombardment on the Growth and Properties of Hydrogenated Amorphous Silicon-Germanium Alloys

    Science.gov (United States)

    Perrin, Jérôme; Takeda, Yoshihiko; Hirano, Naoto; Matsuura, Hideharu; Matsuda, Akihisa

    1989-01-01

    We report a systematic investigation of the effect of ion bombardment during the growth of amorphous silicon-germanium alloy films from silane and germane rf-glow discharge. Independent control of the plasma and the ion flux and energy is obtained by using a triode configuration. The ion contribution to the total deposition rate can reach 20% on negatively biased substrates. Although the Si and Ge composition of the film does not depend on the ion flux and energy, the optical, structural and electronic properties are drastically modified at low deposition temperatures when the maximum ion energy increases up to 50 eV, and remain constant above 50 eV. For a Ge atomic concentration of 37% and a temperature of 135°C, the optical gap decreases from 1.67 to 1.45 eV. This is correlated with a modification of hydrogen bonding configurations. Silicon dihydride sites disappear and preferential attachment of hydrogen to silicon is reduced in favour of germanium. Moreover the photoconductivity increases which shows that ion bombardment is a key parameter to optimize the quality of low band gap amorphous silicon-germanium alloys.

  18. Experimentally determining the relative efficiency of spherically bent germanium and quartz crystals

    Science.gov (United States)

    Brown, G. V.; Beiersdorfer, P.; Hell, N.; Magee, E.

    2016-11-01

    We have used the EBIT-I electron beam ion trap at the Lawrence Livermore National Laboratory and a duplicate Orion High Resolution X-ray Spectrometer (OHREX) to measure the relative efficiency of a spherically bent quartz (10 1 ¯ 1) crystal (2d = 6.687 Å) and a spherically bent germanium (111) crystal (2d = 6.532 Å). L-shell X-ray photons from highly charged molybdenum ions generated in EBIT-I were simultaneously focussed and Bragg reflected by each crystal, both housed in a single spectrometer, onto a single CCD X-ray detector. The flux from each crystal was then directly compared. Our results show that the germanium crystal has a reflection efficiency significantly better than the quartz crystal, however, the energy resolution is significantly worse. Moreover, we find that the spatial focussing properties of the germanium crystal are worse than those of the quartz crystal. Details of the experiment are presented, and we discuss the advantages of using either crystal on a streak-camera equipped OHREX spectrometer.

  19. Performance of bare high-purity germanium detectors in liquid argon for the GERDA experiment

    CERN Document Server

    Heider, Marik Barnabé; Chkvorets, Oleg; Di Vacri, Assunta; Gusev, Konstantin; Schönert, Stefan; Shirchenko, Mark

    2008-01-01

    The GERmanium Detector Array, GERDA, will search for neutrinoless double beta decay in 76Ge at the National Gran Sasso Laboratory of the INFN. Bare high-purity germanium detectors enriched in 76Ge will be submerged in liquid argon serving simultaneously as a shield against external radioactivity and as a cooling medium. In GERDA Phase-I, reprocessed enriched-Ge detectors, which were previously operated by the Heidelberg-Moscow and IGEX collaborations, will be redeployed. Before operating the enriched detectors, tests are performed with non-enriched bare HPGe detectors in the GERDA underground Detector Laboratory to test the Phase-I detector assembly, the detector handling protocols, the refurbishment technology and to study the long-term stability in liquid argon. The leakage currents in liquid argon and liquid nitrogen have been extensively studied under varying gamma irradiation conditions. In total three non-enriched high-purity p-type prototype germanium detectors have been operated successfully. The dete...

  20. CDEX-1 1 kg point-contact germanium detector for low mass dark matter searches

    Science.gov (United States)

    Kang, Ke-Jun; Yue, Qian; Wu, Yu-Cheng; Cheng, Jian-Ping; Li, Yuan-Jing; Bai, Yang; Bi, Yong; Chang, Jian-Ping; Chen, Nan; Chen, Ning; Chen, Qing-Hao; Chen, Yun-Hua; Chuang, Yo-Chun; Deng, Zhi; Du, Qiang; Gong, Hui; Hao, Xi-Qing; He, Qing-Ju; Hu, Xin-Hui; Huang, Han-Xiong; Huang, Teng-Rui; Jiang, Hao; Li, Hau-Bin; Li, Jian-Min; Li, Jin; Li, Jun; Li, Xia; Li, Xin-Ying; Li, Xue-Qian; Li, Yu-Lan; Liao, Heng-Yi; Lin, Fong-Kay; Lin, Shin-Ted; Liu, Shu-Kui; Lü, Lan-Chun; Ma, Hao; Mao, Shao-Ji; Qin, Jian-Qiang; Ren, Jie; Ren, Jing; Ruan, Xi-Chao; Shen, Man-Bin; Lakhwinder, Singh; Manoj, Kumar Singh; Arun, Kumar Soma; Su, Jian; Tang, Chang-Jian; Tseng, Chao-Hsiung; Wang, Ji-Min; Wang, Li; Wang, Qing; Wong Tsz-King, Henry; Wu, Shi-Yong; Wu, Wei; Wu, Yu-Cheng; Xing, Hao-Yang; Xu, Yin; Xue, Tao; Yang, Li-Tao; Yang, Song-Wei; Yi, Nan; Yu, Chun-Xu; Yu, Hao; Yu, Xun-Zhen; Zeng, Xiong-Hui; Zeng, Zhi; Zhang, Lan; Zhang, Yun-Hua; Zhao, Ming-Gang; Zhao, Wei; Zhong, Su-Ning; Zhou, Zu-Ying; Zhu, Jing-Jun; Zhu, Wei-Bin; Zhu, Xue-Zhou; Zhu, Zhong-Hua

    2013-12-01

    The CDEX collaboration has been established for direct detection of light dark matter particles, using ultra-low energy threshold point-contact p-type germanium detectors, in China JinPing underground Laboratory (CJPL). The first 1 kg point-contact germanium detector with a sub-keV energy threshold has been tested in a passive shielding system located in CJPL. The outputs from both the point-contact P+ electrode and the outside N+ electrode make it possible to scan the lower energy range of less than 1 keV and at the same time to detect the higher energy range up to 3 MeV. The outputs from both P+ and N+ electrode may also provide a more powerful method for signal discrimination for dark matter experiment. Some key parameters, including energy resolution, dead time, decay times of internal X-rays, and system stability, have been tested and measured. The results show that the 1 kg point-contact germanium detector, together with its shielding system and electronics, can run smoothly with good performances. This detector system will be deployed for dark matter search experiments.

  1. The CDEX-1 1 kg Point-Contact Germanium Detector for Low Mass Dark Matter Searches

    CERN Document Server

    Kang, Ke-Jun; Wu, Yu-Cheng; Cheng, Jian-Ping; Li, Yuan-Jing; Bai, Yang; Bi, Yong; Chang, Jian-Ping; Chen, Nan; Chen, Ning; Chen, Qing-Hao; Chen, Yun-Hua; Chuang, You-Chun; Dend, Zhi; Du, Qiang; Gong, Hui; Hao, Xi-Qing; He, Qing-Ju; Hu, Xin-Hui; Huang, Han-Xiong; Huang, Teng-Rui; Jiang, Hao; Li, Hau-Bin; Li, Jian-Min; Li, Jin; Li, Jun; Li, Xia; Li, Xin-Ying; Li, Xue-Qian; Li, Yu-Lan; Liao, Heng-Ye; Lin, Fong-Kay; Lin, Shin-Ted; Liu, Shu-Kui; Lv, Lan-Chun; Ma, Hao; Mao, Shao-Ji; Qin, Jian-Qiang; Ren, Jie; Ren, Jing; Ruan, Xi-Chao; Shen, Man-Bin; Singh, Lakhwinder; Singh, Manoj Kumar; Soma, Arun Kumar; Su, Jian; Tang, Chang-Jian; Tseng, Chao-Hsiung; Wang, Ji-Min; Wang, Li; Wang, Qing; Wong, Tsz-King Henry; Wu, Shi-Yong; Wu, Wei; Xing, Hao-Yang; Xu, Yin; Xue, Tao; Yang, Li-Tao; Yang, Song-Wei; Yi, Nan; Yu, Chun-Xu; Yu, Hao; Yu, Xun-Zhen; Zeng, Xiong-Hui; Zeng, Zhi; Zhang, Lan; Zhang, Yun-Hua; Zhao, Ming-Gang; Zhao, Wei; Zhong, Su-Ning; Zhou, Zu-Ying; Zhu, Jing-Jun; Zhu, Wei-Bin; Zhu, Xue-Zhou; Zhu, Zhong-Hua

    2013-01-01

    The CDEX Collaboration has been established for direct detection of light dark matter particles, using ultra-low energy threshold p-type point-contact germanium detectors, in China JinPing underground Laboratory (CJPL). The first 1 kg point-contact germanium detector with a sub-keV energy threshold has been tested in a passive shielding system located in CJPL. The outputs from both the point-contact p+ electrode and the outside n+ electrode make it possible to scan the lower energy range of less than 1 keV and at the same time to detect the higher energy range up to 3 MeV. The outputs from both p+ and n+ electrode may also provide a more powerful method for signal discrimination for dark matter experiment. Some key parameters, including energy resolution, dead time, decay times of internal X-rays, and system stability, have been tested and measured. The results show that the 1 kg point-contact germanium detector, together with its shielding system and electronics, can run smoothly with good performances. This...

  2. Imaging the oblique propagation of electrons in germanium crystals at low temperature and low electric field

    Energy Technology Data Exchange (ETDEWEB)

    Moffatt, R. A., E-mail: rmoffatt@stanford.edu; Cabrera, B.; Corcoran, B. M.; Kreikebaum, J. M.; Redl, P.; Shank, B.; Yen, J. J. [Department of Physics, Stanford University, Stanford, California 94305 (United States); Young, B. A. [Department of Physics, Stanford University, Stanford, California 94305 (United States); Department of Physics, Santa Clara University, Santa Clara, California 95053 (United States); Brink, P. L.; Cherry, M.; Tomada, A. [SLAC National Accelerator Facility, Menlo Park, California 94025 (United States); Phipps, A.; Sadoulet, B.; Sundqvist, K. M. [Department of Physics, University of California, Berkeley, California 94720 (United States)

    2016-01-11

    Excited electrons in the conduction band of germanium collect into four energy minima, or valleys, in momentum space. These local minima have highly anisotropic mass tensors which cause the electrons to travel in directions which are oblique to an applied electric field at sub-Kelvin temperatures and low electric fields, in contrast to the more isotropic behavior of the holes. This experiment produces a full two-dimensional image of the oblique electron and hole propagation and the quantum transitions of electrons between valleys for electric fields oriented along the [0,0,1] direction. Charge carriers are excited with a focused laser pulse on one face of a germanium crystal and then drifted through the crystal by a uniform electric field of strength between 0.5 and 6 V/cm. The pattern of charge density arriving on the opposite face is used to reconstruct the trajectories of the carriers. Measurements of the two-dimensional pattern of charge density are compared in detail with Monte Carlo simulations developed for the Cryogenic Dark Matter Search (SuperCDMS) to model the transport of charge carriers in high-purity germanium detectors.

  3. Low temperature synthesis and electrical characterization of germanium doped Ti-based nanocrystals for nonvolatile memory

    Energy Technology Data Exchange (ETDEWEB)

    Feng, Li-Wei; Chang, Chun-Yen [Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, 300, Taiwan (China); Chang, Ting-Chang, E-mail: tcchang@mail.phys.nsysu.edu.tw [Department of Physics, National Sun Yat-Sen University, Kaohsiung, 804, Taiwan (China); Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung, 804, Taiwan (China); Tu, Chun-Hao; Wang, Pai-Syuan [Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, 300, Taiwan (China); Lin, Chao-Cheng [Green Energy and Environment Research Laboratories, Industrial Technology Research Institute, Hsinchu, 310, Taiwan (China); Chen, Min-Chen [Department of Physics, National Sun Yat-Sen University, Kaohsiung, 804, Taiwan (China); Huang, Hui-Chun; Gan, Der-Shin; Ho, New-Jin [Institute of Materials Science and Engineering, National Sun Yat-Sen University, Kaohsiung, 804, Taiwan (China); Chen, Shih-Ching [Department of Physics, National Sun Yat-Sen University, Kaohsiung, 804, Taiwan (China); Chen, Shih-Cheng [Department of Electrical Engineering and Institute of Electronic Engineering, National Tsing Hua University, Hsinchu, 310, Taiwan (China)

    2011-11-30

    Chemical and electrical characteristics of Ti-based nanocrystals containing germanium, fabricated by annealing the co-sputtered thin film with titanium silicide and germanium targets, were demonstrated for low temperature applications of nonvolatile memory. Formation and composition characteristics of nanocrystals (NCs) at various annealing temperatures were examined by transmission electron microscopy and X-ray photon-emission spectroscopy, respectively. It was observed that the addition of germanium (Ge) significantly reduces the proposed thermal budget necessary for Ti-based NC formation due to the rise of morphological instability and agglomeration properties during annealing. NC structures formed after annealing at 500 Degree-Sign C, and separated well at 600 Degree-Sign C annealing. However, it was also observed that significant thermal desorption of Ge atoms occurs at 600 Degree-Sign C due to the sublimation of formatted GeO phase and results in a serious decrease of memory window. Therefore, an approach to effectively restrain Ge thermal desorption is proposed by encapsulating the Ti-based trapping layer with a thick silicon oxide layer before 600 Degree-Sign C annealing. The electrical characteristics of data retention in the sample with the 600 Degree-Sign C annealing exhibited better performance than the 500 Degree-Sign C-annealed sample, a result associated with the better separation and better crystallization of the NC structures.

  4. Electron Spin Coherence of Shallow Donors in Natural and Isotopically Enriched Germanium

    Science.gov (United States)

    Sigillito, A. J.; Jock, R. M.; Tyryshkin, A. M.; Beeman, J. W.; Haller, E. E.; Itoh, K. M.; Lyon, S. A.

    2015-12-01

    Germanium is a widely used material for electronic and optoelectronic devices and recently it has become an important material for spintronics and quantum computing applications. Donor spins in silicon have been shown to support very long coherence times (T2 ) when the host material is isotopically enriched to remove any magnetic nuclei. Germanium also has nonmagnetic isotopes so it is expected to support long T2's while offering some new properties. Compared to Si, Ge has a strong spin-orbit coupling, large electron wave function, high mobility, and highly anisotropic conduction band valleys which will all give rise to new physics. In this Letter, the first pulsed electron spin resonance measurements of T2 and the spin-lattice relaxation (T1) times for 75As and 31P donors in natural and isotopically enriched germanium are presented. We compare samples with various levels of isotopic enrichment and find that spectral diffusion due to 73Ge nuclear spins limits the coherence in samples with significant amounts of 73Ge. For the most highly enriched samples, we find that T1 limits T2 to T2=2 T1. We report an anisotropy in T1 and the ensemble linewidths for magnetic fields oriented along different crystal axes but do not resolve any angular dependence to the spectral-diffusion-limited T2 in samples with 73Ge.

  5. Boron doping compensation of hydrogenated amorphous and polymorphous germanium thin films for infrared detection applications

    Energy Technology Data Exchange (ETDEWEB)

    Moreno, M., E-mail: mmoreno@inaoep.mx [National Institute of Astrophysics, Optics and Electronics, INAOE, P.O. Box 51 and 216, Puebla, Z. P. 72840 Puebla (Mexico); Delgadillo, N. [Universidad Autónoma de Tlaxcala, Av. Universidad No. 1, Z. P. 90006 Tlaxcala (Mexico); Torres, A. [National Institute of Astrophysics, Optics and Electronics, INAOE, P.O. Box 51 and 216, Puebla, Z. P. 72840 Puebla (Mexico); Ambrosio, R. [Technology and Engineering Institute, Ciudad Juarez University UACJ, Av. Del Charro 450N, Z. P. 32310 Chihuahua (Mexico); Rosales, P.; Kosarev, A.; Reyes-Betanzo, C.; Hidalga-Wade, J. de la; Zuniga, C.; Calleja, W. [National Institute of Astrophysics, Optics and Electronics, INAOE, P.O. Box 51 and 216, Puebla, Z. P. 72840 Puebla (Mexico)

    2013-12-02

    In this work we have studied boron doping of hydrogenated amorphous germanium a-Ge:H and polymorphous germanium (pm-Ge:H) in low regimes, in order to compensate the material from n-type (due to oxygen contamination that commonly occurs during plasma deposition) to intrinsic, and in this manner improve the properties that are important for infrared (IR) detection, as activation energy (E{sub a}) and temperature coefficient of resistance (TCR). Electrical, structural and optical characterization was performed on the films produced. Measurements of the temperature dependence of conductivity, room temperature conductivity (σ{sub RT}), E{sub a} and current–voltage characteristics under IR radiation were performed in the compensated a-Ge:H and pm-Ge:H films. Our results demonstrate that, effectively, the values of E{sub a}, TCR and IR detection are improved on the a-Ge:H/pm-Ge:H films, using boron doping in low regimes, which results of interest for infrared detectors. - Highlights: • We reported boron doping compensation of amorphous and polymorphous germanium. • The films were deposited by plasma enhanced chemical vapor deposition. • The aim is to use the films as thermo-sensing elements in un-cooled microbolometers. • Those films have advantages over boron doped a-Si:H used in commercial detectors.

  6. The GALATEA test facility and a first study of α-induced surface events in a germanium detector

    Energy Technology Data Exchange (ETDEWEB)

    Irlbeck, Sabine

    2014-01-30

    Germanium detectors are a choice technology in fundamental research. They are suitable for the search for rare events due to their high sensitivity and excellent energy resolution. As an example, the GERDA (GERmanium Detector Array) experiment searching for neutrinoless double beta decay is described. The observation of this decay would resolve the fundamental question whether the neutrino is its own antiparticle. Especially adapted detector technologies and low background rates needed to detect very rare events such as neutrinoless double beta decays are discussed. The identification of backgrounds originating from the interaction of radiation, especially α-particles, is a focus of this thesis. Low background experiments face problems from α-particles due to unavoidable surface contaminations of the germanium detectors. The segmentation of detectors is used to obtain information about the special characteristics of selected events. The high precision test stand GALATEA was especially designed for surface scans of germanium detectors. As part of this work, GALATEA was completed and commissioned. The final commissioning required major upgrades of the original design which are described in detail. Collimator studies with two commercial germanium detectors are presented. Different collimation levels for a β-source were investigated and crystal axis effects were examined. The first scan with an α-source of the passivated end-plate of a special 19-fold segmented prototype detector mounted in GALATEA is described. The α-induced surface events were studied and characterized. Crosstalk and mirror pulses seen in the segments of the germanium detector were analyzed. The detector studies presented in this thesis will help to further improve the design of germanium detectors for low background experiments.

  7. Optimizing photon-pair generation electronically using a p-i-n diode incorporated in a silicon microring resonator

    Science.gov (United States)

    Savanier, Marc; Kumar, Ranjeet; Mookherjea, Shayan

    2015-09-01

    Silicon photonic microchips may be useful for compact, inexpensive, room-temperature optically pumped photon-pair sources, which unlike conventional photon-pair generators based on crystals or optical fibers, can be manufactured using CMOS-compatible processes on silicon wafers. It has been shown that photon pairs can be created in simple structures such as microring resonators at a rate of a few hundred kilohertz using less than a milliwatt of optical pump power, based on the process of spontaneous four-wave mixing. To create a practical photon-pair source, however, also requires some way of monitoring the device and aligning the pump wavelength when the temperature varies, since silicon resonators are highly sensitive to temperature. In fact, monitoring photodiodes are standard components in classical laser diodes, but the incorporation of germanium or InGaAs photodiodes would raise the cost and fabrication complexity. Here, we present a simple and effective all-electronic technique for finding the optimum operating point for the microring used to generate photon pairs, based on measuring the reverse-biased current in a silicon p-i-n junction diode fabricated across the waveguide that constitutes the silicon microring. We show that by monitoring the current, and using it to tune the pump laser wavelength, the photon-pair generation properties of the microring can be preserved over a temperature range of more than 30 °C.

  8. Optimizing photon-pair generation electronically using a p-i-n diode incorporated in a silicon microring resonator

    Energy Technology Data Exchange (ETDEWEB)

    Savanier, Marc, E-mail: msavanier@eng.ucsd.edu; Kumar, Ranjeet; Mookherjea, Shayan, E-mail: smookherjea@eng.ucsd.edu [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States)

    2015-09-28

    Silicon photonic microchips may be useful for compact, inexpensive, room-temperature optically pumped photon-pair sources, which unlike conventional photon-pair generators based on crystals or optical fibers, can be manufactured using CMOS-compatible processes on silicon wafers. It has been shown that photon pairs can be created in simple structures such as microring resonators at a rate of a few hundred kilohertz using less than a milliwatt of optical pump power, based on the process of spontaneous four-wave mixing. To create a practical photon-pair source, however, also requires some way of monitoring the device and aligning the pump wavelength when the temperature varies, since silicon resonators are highly sensitive to temperature. In fact, monitoring photodiodes are standard components in classical laser diodes, but the incorporation of germanium or InGaAs photodiodes would raise the cost and fabrication complexity. Here, we present a simple and effective all-electronic technique for finding the optimum operating point for the microring used to generate photon pairs, based on measuring the reverse-biased current in a silicon p-i-n junction diode fabricated across the waveguide that constitutes the silicon microring. We show that by monitoring the current, and using it to tune the pump laser wavelength, the photon-pair generation properties of the microring can be preserved over a temperature range of more than 30 °C.

  9. Analysis of the dead layer of a detector of germanium with code ultrapure Monte Carlo SWORD-GEANT; Analisis del dead layer de un detector de germanio ultrapuro con el codigo de Monte Carlo SWORDS-GEANT

    Energy Technology Data Exchange (ETDEWEB)

    Gallardo, S.; Querol, A.; Ortiz, J.; Rodenas, J.; Verdu, G.

    2014-07-01

    In this paper the use of Monte Carlo code SWORD-GEANT is proposed to simulate an ultra pure germanium detector High Purity Germanium detector (HPGe) detector ORTEC specifically GMX40P4, coaxial geometry. (Author)

  10. Cern DD4424 ROM Diode Matrix

    CERN Multimedia

    A diode matrix is an extremely low-density form of read-only memory. It's one of the earliest forms of ROMs (dating back to the 1950s). Each bit in the ROM is represented by the presence or absence of one diode. The ROM is easily user-writable using a soldering iron and pair of wire cutters.This diode matrix board is a floppy disk boot ROM for a PDP-11, and consists of 32 16-bit words. When you access an address on the ROM, the circuit returns the represented data from that address.

  11. A Diode Matrix model M792

    CERN Multimedia

    A diode matrix is an extremely low-density form of read-only memory. It's one of the earliest forms of ROMs (dating back to the 1950s). Each bit in the ROM is represented by the presence or absence of one diode. The ROM is easily user-writable using a soldering iron and pair of wire cutters.This diode matrix board is a floppy disk boot ROM for a PDP-11, and consists of 32 16-bit words. When you access an address on the ROM, the circuit returns the represented data from that address.

  12. Bilayer avalanche spin-diode logic

    Energy Technology Data Exchange (ETDEWEB)

    Friedman, Joseph S., E-mail: joseph.friedman@u-psud.fr; Querlioz, Damien [Institut d’Electronique Fondamentale, Univ. Paris-Sud, CNRS, 91405 Orsay (France); Fadel, Eric R. [Department of Materials Science, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States); Wessels, Bruce W. [Department of Electrical Engineering & Computer Science, Northwestern University, Evanston, IL 60208 (United States); Department of Materials Science & Engineering, Northwestern University, Evanston, IL 60208 (United States); Sahakian, Alan V. [Department of Electrical Engineering & Computer Science, Northwestern University, Evanston, IL 60208 (United States); Department of Biomedical Engineering, Northwestern University, Evanston, IL 60208 (United States)

    2015-11-15

    A novel spintronic computing paradigm is proposed and analyzed in which InSb p-n bilayer avalanche spin-diodes are cascaded to efficiently perform complex logic operations. This spin-diode logic family uses control wires to generate magnetic fields that modulate the resistance of the spin-diodes, and currents through these devices control the resistance of cascaded devices. Electromagnetic simulations are performed to demonstrate the cascading mechanism, and guidelines are provided for the development of this innovative computing technology. This cascading scheme permits compact logic circuits with switching speeds determined by electromagnetic wave propagation rather than electron motion, enabling high-performance spintronic computing.

  13. Improved Thermoelectrically Cooled Laser-Diode Assemblies

    Science.gov (United States)

    Glesne, Thomas R.; Schwemmer, Geary K.; Famiglietti, Joe

    1994-01-01

    Cooling decreases wavelength and increases efficiency and lifetime. Two improved thermoelectrically cooled laser-diode assemblies incorporate commercial laser diodes providing combination of both high wavelength stability and broad wavelength tuning which are broadly tunable, highly stable devices for injection seeding of pulsed, high-power tunable alexandrite lasers used in lidar remote sensing of water vapor at wavelengths in vicinity of 727 nanometers. Provide temperature control needed to take advantage of tunability of commercial AlGaAs laser diodes in present injection-seeding application.

  14. Full-quantum light diode

    CERN Document Server

    Ghobadi, Roohollah

    2015-01-01

    Unidirectional light transport in one-dimensional nanomaterials at the quantum level is a crucial goal to achieve for upcoming computational devices. We here employ a full-quantum mechanical approach based on master equation to describe unidirectional light transport through a pair of two-level systems coupled to a one-dimensional waveguide. By comparing with published semi-classical results, we find that the nonlinearity of the system is reduced, thereby reducing also the unidirectional light transport efficiency. Albeit not fully efficient, we find that the considered quantum system can work as a light diode with an efficiency of approximately 60%. Our results may be used in quantum computation with classical and quantized light.

  15. Quantum noise in superluminescent diodes

    Energy Technology Data Exchange (ETDEWEB)

    Yuvek, A.M.; Taylor, H.F.; Goldberg, L.; Weller, J.F.; Dandridge, A.

    1986-04-01

    Intensity noise in a superluminescent diode (SLD) has been studied over the frequency range from 100 Hz to 2 MHz. The ''1/F'' noise which dominates at low frequencies (<59 kHz) is superceded by a flat ''white noise'' spectrum at higher frequencies (> 500 5Hz). A more extensive investigation has been carried out in this higher frequency regime, where the intensity noise is assumed to result from quantum fluctuation effects. For a given SLD driving current, the excess noise power is found to be a linear function of photodetector current to the maximum observed level of 12 db. These results agree well with the behavior predicted by a quantum amplifier model for the SLD.

  16. Semiconductor laser diodes and the design of a D.C. powered laser diode drive unit

    OpenAIRE

    Cappuccio, Joseph C., Jr.

    1988-01-01

    Approved for public release; distribution is unlimited This thesis addresses the design, development and operational analysis of a D.C. powered semiconductor laser diode drive unit. A laser diode requires an extremely stable power supply since a picosecond spike of current or power supply switching transient could result in permanent damage. The design offers stability and various features for operational protection of the laser diode. The ability to intensity modulate (analog) and pulse m...

  17. Semiconductor laser diodes and the design of a D.C. powered laser diode drive unit

    OpenAIRE

    Cappuccio, Joseph C., Jr.

    1988-01-01

    Approved for public release; distribution is unlimited This thesis addresses the design, development and operational analysis of a D.C. powered semiconductor laser diode drive unit. A laser diode requires an extremely stable power supply since a picosecond spike of current or power supply switching transient could result in permanent damage. The design offers stability and various features for operational protection of the laser diode. The ability to intensity modulate (analog) and pulse m...

  18. Arbitrary waveform generator to improve laser diode driver performance

    Science.gov (United States)

    Fulkerson, Jr, Edward Steven

    2015-11-03

    An arbitrary waveform generator modifies the input signal to a laser diode driver circuit in order to reduce the overshoot/undershoot and provide a "flat-top" signal to the laser diode driver circuit. The input signal is modified based on the original received signal and the feedback from the laser diode by measuring the actual current flowing in the laser diode after the original signal is applied to the laser diode.

  19. Investigation of Surface Roughness of Single Point Diamond Turned Germanium Substrate by Coherence Correlation Interferometry and Image Processing

    Science.gov (United States)

    Gupta, Shivani; Khatri, Neha; Karar, Vinod; Dhami, S. S.

    2016-09-01

    Germanium is a widely used material in the infrared range. Single crystal germanium is used as semiconductor and optical material due to its salient features like high refractive index and proper working in cryogenic conditions. Thus, germanium is an important substrate for infrared lens having many applications in thermal imaging cameras, optical telescopes and miniaturization of infrared optical elements. These applications require optical elements of excellent surface quality and high dimensional accuracy. In addition to fulfil the demands, ultraprecision machine is used to fabricate the optical components. In this work, single crystal germanium (111) mirror is fabricated by using single point diamond tool with, negative rake angle. A large number of experiments are performed to achieve the surface finish of nanometric range. The best and worst combinations of process parameters are found on the basis of surface roughness with the help of coherence correlation interferometry(CCI) measurement and image processing using Canny, Prewitt, Roberts and Sobel edge filters and histogram. These results can be used for fabrication of diffractive optical elements and aspheric lenses of germanium.

  20. Methods to improve and understand the sensitivity of high purity germanium detectors for searches of rare events

    Energy Technology Data Exchange (ETDEWEB)

    Volynets, Oleksandr

    2012-07-27

    Observation of neutrinoless double beta-decay could answer fundamental questions on the nature of neutrinos. High purity germanium detectors are well suited to search for this rare process in germanium. Successful operation of such experiments requires a good understanding of the detectors and the sources of background. Possible background sources not considered before in the presently running GERDA high purity germanium detector experiment were studied. Pulse shape analysis using artificial neural networks was used to distinguish between signal-like and background-like events. Pulse shape simulation was used to investigate systematic effects influencing the efficiency of the method. Possibilities to localize the origin of unwanted radiation using Compton back-tracking in a granular detector system were examined. Systematic effects in high purity germanium detectors influencing their performance have been further investigated using segmented detectors. The behavior of the detector response at different operational temperatures was studied. The anisotropy effects due to the crystallographic structure of germanium were facilitated in a novel way to determine the orientation of the crystallographic axes.

  1. Evaluation of chemical and structural properties of germanium-carbon coatings deposited by plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Jamali, Hossein, E-mail: h.jamali@mut-es.ac.ir; Mozafarinia, Reza; Eshaghi, Akbar

    2015-10-15

    Germanium-carbon coatings were deposited on silicon and glass substrates by plasma enhanced chemical vapor deposition (PECVD) using three different flow ratios of GeH{sub 4} and CH{sub 4} precursors. Elemental analysis, structural evaluation and microscopic investigation of coatings were performed using laser-induced breakdown spectroscopy (LIBS), Fourier transform infrared (FTIR) spectroscopy, X-ray diffraction (XRD), Raman spectroscopy, field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM), respectively. Based on the results, the coatings exhibited a homogeneous and dense structure free of pores with a very good adhesion to substrate. The structural evaluation revealed that the germanium-carbon coatings were a kind of a Ge-rich composite material containing the amorphous and crystalline germanium and amorphous carbon with the mixture of Ge–Ge, Ge–C, C–C, Ge–H and C–H bonds. The result suggested that the amorphisation of the coatings could be increased with raising CH{sub 4}:GeH{sub 4} flow rate ratio and subsequently increasing C amount incorporated into the coating. - Highlights: • Germanium-carbon coatings were prepared by PECVD technique. • The germanium-carbon coatings were a kind of composite material. • The amorphisation of the coatings were increased with raising CH{sub 4}:GeH{sub 4} flow ratio.

  2. MOS Ge Diodes Based on High κ Gate Dielectrics Grown by MBE and ALD

    Science.gov (United States)

    Lee, Kun Yu; Lee, W. C.; Lin, T. D.; Lee, C. S.; Chang, Y. C.; Lee, Y. J.; Huang, M. L.; Wu, Y. D.; Hong, M.; Kwo, J.

    2007-03-01

    Germanium-based CMOS technology is gaining importance due to its high carrier mobility. In this work high κ gate-dielectrics, Al2O3, HfO2, Y2O3 and Ga2O3(Gd2O3) grown by MBE and ALD were investigated as passivation layers on n type Ge(100). Thermal stability of the MOS diodes was examined after various anneals. Prior to dielectric depositions surface pretreatments were applied to reduce the unwanted GeOx interfacial layer, and to improve electrical properties. Frequency dispersion of C-V curves was reduced by using a 350^oC preclean process, compared to the sample without precleaning. The leakage current density of ALD grown HfO2 (6.8nm) is 4.6×10-6 A/cm^2 with κ of 10.5. The improved CV curve was attributed to less GeOx formed at substrate and oxide interface, as confirmed by XPS analysis. However, with higher cleaning temperature over 400^oC, the CV curves showed additional inversion capacitance, possibly due to minority carriers from defect states near the interface.

  3. High Power Diode Lasers Technology and Applications

    CERN Document Server

    Bachmann, Friedrich; Poprawe, Reinhart

    2007-01-01

    In a very comprehensive way this book covers all aspects of high power diode laser technology for materials processing. Basics as well as new application oriented results obtained in a government funded national German research project are described in detail. Along the technological chain after a short introduction in the second chapter diode laser bar technology is discussed regarding structure, manufacturing technology and metrology. The third chapter illuminates all aspects of mounting and cooling, whereas chapter four gives wide spanning details on beam forming, beam guiding and beam combination, which are essential topics for incoherently coupled multi-emitter based high power diode lasers. Metrology, standards and safety aspects are the theme of chapter five. As an outcome of all the knowledge from chapter two to four various system configurations of high power diode lasers are described in chapter six; not only systems focussed on best available beam quality but especially also so called "modular" set...

  4. Advanced laser diodes for sensing applications

    Energy Technology Data Exchange (ETDEWEB)

    VAWTER,GREGORY A.; MAR,ALAN; CHOW,WENG W.; ALLERMAN,ANDREW A.

    2000-01-01

    The authors have developed diode lasers for short pulse duration and high peak pulse power in the 0.01--100.0 m pulsewidth regime. A primary goal of the program was producing up to 10 W while maintaining good far-field beam quality and ease of manufacturability for low cost. High peak power, 17 W, picosecond pulses have been achieved by gain switching of flared geometry waveguide lasers and amplifiers. Such high powers area world record for this type of diode laser. The light emission pattern from diode lasers is of critical importance for sensing systems such as range finding and chemical detection. They have developed a new integrated optical beam transformer producing rib-waveguide diode lasers with a symmetric, low divergence, output beam and increased upper power limits for irreversible facet damage.

  5. I-V characteristics of foilless diodes

    Institute of Scientific and Technical Information of China (English)

    Liu Guo-Zhi; Huang Wen-Hua; Yang Zhan-Feng

    2005-01-01

    Some physical characteristics of foilless diodes are obtained and analysed by numerical simulations. Relations between diode current andconfiguration parameters, i.e. diode voltage and external magnetic field, are investigated.Employing these relations and assuming that the external magnetic field is strong enough, the diode current can be approximately written as Ib=(7.5/x)(x+(0.81-x)/(1+0.7Ld2/δr))(γ0 2/3-1)3/2, in which Ld is the Anode-Cathode(AK) gap, Rc the outer radius of cathode, and Rp the radius of drifting tube; x=ln(Rp/Rc), δr=Rp- Rc. This expression is comparatively accurate for different configuration parameters and voltages; results obtained from this expression are consistent with that of numerical simulations within an error of 10%.

  6. Near infrared polymer light-emitting diodes

    Institute of Scientific and Technical Information of China (English)

    ZHANG Yong; YANG Jian; HOU Qiong; MO Yueqi; PENG Junbiao; CAO Yong

    2005-01-01

    High efficiency of near infrared polymer light-emitting diodes with bilayer structure was obtained. The diode structure is ITO/PEDOT/L1/L2/Ba/Al, where L1 is phenyl-substituted poly [p-phenylphenylene vinylene] derivative (P-PPV), L2 is 9,9-dioctylfluorene (DOF) and 4,7- bis(3-hexylthiophen)-2-yl-2,1,3-naphthothiadiazole (HDNT) copolymer (PFHDNT10). The electroluminescence (EL) spectrum of diodes from PFHDNT10 is at 750 nm located in the range of near infrared. The maximum external quantum efficiency is up to 2.1% at the current density of 35 mA/cm2. The improvement of the diode's performances was considered to be the irradiative excitons confined in the interface between L1 and L2 layers.

  7. Diode laser (980nm) cartilage reshaping

    Science.gov (United States)

    El Kharbotly, A.; El Tayeb, T.; Mostafa, Y.; Hesham, I.

    2011-03-01

    Loss of facial or ear cartilage due to trauma or surgery is a major challenge to the otolaryngologists and plastic surgeons as the complicated geometric contours are difficult to be animated. Diode laser (980 nm) has been proven effective in reshaping and maintaining the new geometric shape achieved by laser. This study focused on determining the optimum laser parameters needed for cartilage reshaping with a controlled water cooling system. Harvested animal cartilages were angulated with different degrees and irradiated with different diode laser powers (980nm, 4x8mm spot size). The cartilage specimens were maintained in a deformation angle for two hours after irradiation then released for another two hours. They were serially measured and photographed. High-power Diode laser irradiation with water cooling is a cheep and effective method for reshaping the cartilage needed for reconstruction of difficult situations in otorhinolaryngologic surgery. Key words: cartilage,diode laser (980nm), reshaping.

  8. Phase Noise Reduction of Laser Diode

    Science.gov (United States)

    Zhang, T. C.; Poizat, J.-Ph.; Grelu, P.; Roch, J.-F.; Grangier, P.; Marin, F.; Bramati, A.; Jost, V.; Levenson, M. D.; Giacobino, E.

    1996-01-01

    Phase noise of single mode laser diodes, either free-running or using line narrowing technique at room temperature, namely injection-locking, has been investigated. It is shown that free-running diodes exhibit very large excess phase noise, typically more than 80 dB above shot-noise at 10 MHz, which can be significantly reduced by the above-mentioned technique.

  9. Interferometry and Holography With Diode Laser Light

    CERN Document Server

    Lunazzi, Jose Joaquin

    2016-01-01

    We made an interferometric Michelson type setup and a simple holographic setup to demonstrate the feasibility of interferometric and holographic techniques by means of a diode laser. The laser was made by using a common diode available as a penlight element (less than R$ 15,00 value) and a simple stabilized 110 VCA- 3 VCC power supply. Interference fringes and holograms of small objects where obtained very similar to those of a helium-neon laser based setup.

  10. Multiple and broad frequency response Gunn diodes

    Science.gov (United States)

    Pilgrim, N. J.; Macpherson, R. F.; Khalid, A.; Dunn, G. M.; Cumming, D. R. S.

    2009-10-01

    Gunn diodes, operating in transit time mode, are usually thought of as incapable of generating power at multiple frequencies or over a broad frequency range. In this paper, we report experimental results showing that these diodes can generate power at several frequencies and, using Monte Carlo simulations of both planar and vertical devices, we offer an explanation of how this unusual behaviour may come into being and suggest possible applications for this novel device.

  11. SiC Schottky diode electrothermal macromodel

    OpenAIRE

    Masana Nadal, Francisco

    2010-01-01

    This paper presents a SiC Schottky diode model including static, dynamic and thermal features implemented as separate parameterized blocks constructed from SPICE Analog Behavioral Modeling (ABM) controlled sources. The parameters for each block are easy to extract, even from readily available diode data sheet information. The model complexity is low thus allowing reasonably long simulation times to cope with the rather slow self heating process and yet accurate enough for practical purposes.

  12. Bypass diode for a solar cell

    Science.gov (United States)

    Rim, Seung Bum; Kim, Taeseok; Smith, David D.; Cousins, Peter J.

    2012-03-13

    Bypass diodes for solar cells are described. In one embodiment, a bypass diode for a solar cell includes a substrate of the solar cell. A first conductive region is disposed above the substrate, the first conductive region of a first conductivity type. A second conductive region is disposed on the first conductive region, the second conductive region of a second conductivity type opposite the first conductivity type.

  13. Varactor diodes for millimeter and submillimeter wavelengths

    Science.gov (United States)

    Rizzi, Brian J.; Hesler, Jeffrey L.; Dossal, Hasan; Crowe, Thomas W.

    1992-01-01

    Whisker-contacted GaAs Schottky barrier varactor diodes are the most common high-frequency multiplier element in use today. They are inherently simple devices that have very high frequency response and have been used to supply local oscillator power for Schottky heterodyne receivers to frequencies approaching 700 GHz. This paper discusses the development of improved varactor diode technology for space based applications at millimeter and submillimeter wavelengths.

  14. Low Specific Contact Resistivity to n-Ge and Well-Behaved Ge n+/p Diode Achieved by Implantation and Excimer Laser Annealing

    Science.gov (United States)

    Wang, Chen; Li, Cheng; Huang, Shihao; Lu, Weifang; Yan, Guangming; Lin, Guangyang; Wei, Jiangbin; Huang, Wei; Lai, Hongkai; Chen, Songyan

    2013-10-01

    Excimer laser annealing of phosphorus-implanted p-type germanium substrate with various laser energy densities for n+/p junction were investigated. The effects of laser energy density on the redistribution of dopant, surface morphology, and recrystallization of the amorphous Ge induced by ion implantation were characterized. A low specific contact resistivity of 1.61×10-6 Ω·cm2 was achieved from Al/n-Ge ohmic contact, in which phosphorus-implanted Ge was annealed at a laser energy density of 250 mJ/cm2, tailoring a small phosphorus diffusion length, high activation level, and low dopant loss. A well-behaved Ge n+/p diode with a rectification ratio up to 1.99×105 was demonstrated.

  15. The MAJORANA DEMONSTRATOR: An R&D project towards a tonne-scale germanium neutrinoless double-beta decay search

    Energy Technology Data Exchange (ETDEWEB)

    Aalseth, Craig E; Amman, M; Amsbaugh, John F; Avignone, F. T.; Back, Henning O; Barabash, A; Barbeau, Phil; Beene, Jim; Bergevin, M; Bertrand, F; Boswell, M; Brudanin, V; Bugg, William; Burritt, Tom H; Chan, Yuen-Dat; Collar, J I; Cooper, R J; Creswick, R; Detwiler, Jason A; Doe, P J; Efremenko, Yuri; Egorov, Viatcheslav; Ejiri, H; Elliott, Steven R; Ely, James H; Esterline, James H; Farach, H A; Fast, James E; Fields, N; Finnerty, P; Fujikawa, Brian; Fuller, Erin S; Gehman, Victor; Giovanetti, G K; Guiseppe, Vincente; Gusey, K; Hallin, A L; Hazama, R; Henning, Reyco; Hime, Andrew; Hoppe, Eric W; Hossbach, Todd W; Howe, M A; Johnson, R A; Keeter, K; Keillor, Martin E; Keller, C; Kephart, Jeremy D; Kidd, Mary; Kochetov, Oleg; Konovalov, S; Kouzes, Richard T; Lesko, Kevin; Leviner, L; Loach, J C; Luke, P; MacMullin, S; Marino, Michael G; Mei, Dong-Ming; Miley, Harry S; Miller, M; Mizouni, Leila K; Montoya, A; Myers, A W; Nomachi, Masaharu; Odom, Brian; Orrell, John L; Phillips, D; Poon, Alan; Prior, Gersende; Qian, J; Radford, D C; Rielage, Keith; Robertson, R G. H.; Rodriguez, Larry; Rykaczewski, Krzysztof P; Schubert, Alexis G; Shima, T; Shirchenko, M; Strain, J; Thomas, K; Thompson, Robert C; Timkin, V; Tornow, W; Van Wechel, T D; Vanyushin, I; Vetter, Kai; Warner, Ray A; Wilkerson, J; Wouters, Jan; Yakushev, E; Young, A; Yu, Chang-Hong; Yumatov, Vladimir; Zhang, C L; Zimmerman, S

    2009-12-17

    The MAJORANA collaboration is pursuing the development of the so-called MAJORANA DEMONSTRATOR. The DEMONSTRATOR is intended to perform research and development towards a tonne-scale germanium-based experiment to search for the neutrinoless double-beta decay of 76Ge. The DEMONSTRATOR can also perform a competitive direct dark matter search for light WIMPs in the 1-10GeV/c2 mass range. It will consist of approximately 60 kg. of germanium detectors in an ultra-low background shield located deep underground at the Sanford Underground Laboratory in Lead, SD. The DEMONSTRATOR will also perform background and technology studies, and half of the detector mass will be enriched germanium. This talk will review the motivation, design, technology and status of the Demonstrator.

  16. A Nanomembrane-Based Bandgap-Tunable Germanium Microdisk Using Lithographically-Customizable Biaxial Strain for Silicon-Compatible Optoelectronics

    CERN Document Server

    Sukhdeo, David S; Kang, Ju-Hyung; Brongersma, Mark L; Saraswat, Krishna C

    2014-01-01

    Strain engineering has proven to be vital for germanium-based photonics, in particular light emission. However, applying a large permanent biaxial strain to germanium has been a challenge. We present a simple, CMOS-compatible technique to conveniently induce a large, spatially homogenous strain in microdisks patterned within ultrathin germanium nanomembranes. Our technique works by concentrating and amplifying a pre-existing small strain into the microdisk region. Biaxial strains as large as 1.11% are observed by Raman spectroscopy and are further confirmed by photoluminescence measurements, which show enhanced and redshifted light emission from the strained microdisks. Our technique allows the amount of biaxial strain to be customized lithographically, allowing the bandgaps of different microdisks to be independently tuned in a single mask process. Our theoretical calculations show that this platform can deliver substantial performance improvements, including a >200x reduction in the lasing threshold, to bia...

  17. The x-ray reflection efficiencies of planes (III) in germanium silicon and fluorite analyzing crystals. Experimental data

    Energy Technology Data Exchange (ETDEWEB)

    Bermudez Polonio, J.

    1964-07-01

    Integrated and peak reflection efficiency curves relative to a LiF crystal are presented. K{sub {alpha}} fluorescent radiations between (22) Ti and (41) Nb were used for both germanium and silicon crystals: the interval was extended to CaK{sub {alpha}} radiation in the short wavelength region with the fluorite crystal. Reflection efficiency curves show sharp declines in the region around the K absorption edges of germanium and calcium. For CuK{sub {alpha}} radiation, the experimental reflection efficiencies at the peak for germanium, silicon and fluorite crystals are 52, 38.5 and 17 percent, whereas the integrated reflection efficiencies are 65.5, 38 and 14 percent respectively. The data were obtained from untreated crystals, using a standard Norelco non-focussing X-ray spectrometer. Experimental procedures are presented. Some considerations about the (222) missing reflections are made. (Author) 12 refs.

  18. Measurement of the total neutron cross-section of germanium at energies below 2 eV

    Energy Technology Data Exchange (ETDEWEB)

    Salama, M.

    1983-01-01

    The total neutron cross-section of germanium has been measured at room temperature as a function of neutron energy in the range between 2.2 eV and 7 meV for randomly distributed crystals of germanium by transmission method using a chopper time-of-flight spectrometer at ET-RR-1 research reactor. The measured cross-section showed an evidence of 1/..nu.. thermal slope in the energy range 1.20 eV to 0.20 eV. Crystal structure effects were also observed. Calculations were performed giving values for the coherent scattering amplitude as well as the coherent scattering cross-section. The results obtained showed also the absence of scattering nuclear spin dependence in case of germanium.

  19. Biological insertion of nanostructured germanium and titanium oxides into diatom biosilica

    Science.gov (United States)

    Jeffryes, Clayton S.

    There is significant interest in titanium oxide and germanium-silicon oxide nanocomposites for optoelectronic, photocatalytic, and solar cell applications. The ability of the marine diatom Pinnularia sp. to uptake soluble metal oxides from cell culture medium, and incorporate them into the micro- and nano-structure of their amorphous silica cell walls, called frustules, was evaluated using an engineered photobioreactor system. The effects of metal oxides on the structural and elemental properties of the frustule were also evaluated. Diatom cell cultures grown in 5 L photobioreactors were initially charged with 0.5 mM of soluble silicon, Si(OH)4, an obligate substrate required for frustule fomation. Upon exhaustion of Si(OH)4 cells were exposed to the mixed pulse-addition of soluble silicon and germanium or co-perfusion addition of soluble silicon and titanium, which were incorporated into the frustules. Metals composition of the cell culture medium, diatom biomass and purified frustules were measured, as was the local elemental composition within the frustule pores and the metal oxide crystallinity. Diatom frustules having a germanium composition of 1.6 wt % were devoid of the native intra-pore structures and possessed enhanced photoluminescence and electroluminescence when compared to frustules without Ge. Diatoms cultivated in the presence of soluble titanium incorporated amorphous titania into the frustule, which maintained native structure even when local TiO2 concentrations within the nanopores approached 60 wt. %. Titanium oxide could also be biomimetically deposited directly within the diatom nanopores by adsorbing poly-L-lysine to the diatom biosilica where it catalyzed the soluble titanium precursor Ti-BALDH into amorphous titania nanoparticles. Both biogenic and biomimetic titania could be converted to anatase titanium by thermal annealing. It was determined that nanostructured metal oxide composites can be fabricated biomimetically or in cell culture to

  20. Evaluations of the commercial spectrometer systems for safeguards applications using the germanium detectors

    Energy Technology Data Exchange (ETDEWEB)

    Vo, D.T.

    1998-12-31

    Safeguards applications require the best spectrometer systems with excellent resolution, stability, and throughput. Instruments must perform well in all the situations and environments. Data communication to the computer should be convenient, fast, and reliable. The software should have all the necessary tools and be ease to use. Portable systems should be small in size, lightweight, and have a long battery life. Nine commercially available spectrometer systems are tested with both the planar and coaxial germanium detectors. Considering the performance of the Digital Signal Processors (DSP), digital-based spectroscopy may be the future of gamma-ray spectroscopy.

  1. Comparison of electron and hole charge-discharge dynamics in germanium nanocrystal flash memories

    Science.gov (United States)

    Akca, Imran B.; Dâna, Aykutlu; Aydinli, Atilla; Turan, Rasit

    2008-02-01

    Electron and hole charge and discharge dynamics are studied on plasma enhanced chemical vapor deposition grown metal-oxide-silicon germanium nanocrystal flash memory devices. Electron and hole charge and discharge currents are observed to differ significantly and depend on annealing conditions chosen for the formation of nanocrystals. At low annealing temperatures, holes are seen to charge slower but to escape faster than electrons. They discharge slower than electrons when annealing temperatures are raised. The results suggest that discharge currents are dominated by the interface layer acting as a quantum well for holes and by direct tunneling for elec-trons.

  2. Optical Activation of Germanium Plasmonic Antennas in the Mid-Infrared.

    Science.gov (United States)

    Fischer, Marco P; Schmidt, Christian; Sakat, Emilie; Stock, Johannes; Samarelli, Antonio; Frigerio, Jacopo; Ortolani, Michele; Paul, Douglas J; Isella, Giovanni; Leitenstorfer, Alfred; Biagioni, Paolo; Brida, Daniele

    2016-07-22

    Impulsive interband excitation with femtosecond near-infrared pulses establishes a plasma response in intrinsic germanium structures fabricated on a silicon substrate. This direct approach activates the plasmonic resonance of the Ge structures and enables their use as optical antennas up to the mid-infrared spectral range. The optical switching lasts for hundreds of picoseconds until charge recombination redshifts the plasma frequency. The full behavior of the structures is modeled by the electrodynamic response established by an electron-hole plasma in a regular array of antennas.

  3. Optical and Structural Characterization of Pin Photodetector Based on Germanium Nanocrystals for Third Generation Solar Cells

    Directory of Open Access Journals (Sweden)

    K.K. Sossoe

    2016-11-01

    Full Text Available We investigated the structural and optoelectronic properties of p-n germanium nanocrystals based junctions embedded between GaAs substrate and layers of ZnO:Al or a-Si:H. Scanning electron microscopy and scanning tunneling microscopy were used on these junctions in this work. Calculations of tunneling current on the substrate showed effect of localized defects trapping Fermi level at the surface tending to make a semi-insulating substrate. The average value of the diameter of the Ge nanoparticle is around 12.5 nm. These results lay the foundation for the development of solar cells which active part is made of GeNCs.

  4. Electronic Structure of Single-Crystal Monolayer Graphene on Hydrogen-Terminated Germanium Surface

    Science.gov (United States)

    Ahn, Sung Joon; Lee, Jae-Hyun; Ahn, Joung Real; Whang, Dongmok

    2015-03-01

    Graphene, atomically flat 2-Dimensional layered nano material, has a lot of interesting characteristics from its unusual electronic structure. Almost properties of graphene are influenced by its crystallinity, therefore the uniform growth of single crystal graphene and layer control over the wafer scale areas remains a challenge in the fields of electronic, photonic and other devices based on graphene. Here, we report the method to make wafer scale single crystal monolayer graphene on hydrogen terminated germanium(110) surface and properties and electronic band structure of the graphene by using the tool of scanning electron microscopy, transmission electron microscopy, Raman spectroscopy, electron transport measurement, electron diffraction and angle-resolved photoemission spectroscopy.

  5. Low-energy neutrino and dark matter physics with sub-keV germanium detectors

    Indian Academy of Sciences (India)

    A K Soma; L Singh; M K Singh; V Singh; H T Wong

    2012-11-01

    The TEXONO-CDEX Collaboration (Taiwan experiment on neutrino–China dark matter experiment) explores high-purity germanium (HPGe) detection technology to develop a sub-keV threshold detector for pursuing studies on low mass weakly interacting massive particles (WIMPs), properties of neutrino and the possibilities of neutrino-nucleus coherent scattering observation. This article will introduce the facilities of newly established China Jing-Ping Underground Laboratory (CJPL), preliminary result of cosmic ray background studies at CJPL, the dark matter studies pursued at Kuo-Sheng Neutrino Laboratory (KSNL) and research efforts to accomplish our physics goals.

  6. Effect of uniaxial stress on gallium, beryllium, and copper-doped germanium hole population inversion lasers

    Energy Technology Data Exchange (ETDEWEB)

    Chamberlin, Danielle Russell [Univ. of California, Berkeley, CA (United States)

    1998-05-01

    The effects of stress on germanium lasers doped with single, double, and triple acceptors have been investigated. The results can be explained quantitatively with theoretical calculations and can be attributed to specific changes in the energy levels of acceptors in germanium under stress. In contrast to previous measurements, gallium-doped Ge crystals show a decrease in lasing upon uniaxial stress. The decrease seen here is attributed to the decrease in heavy hole effective mass upon application of uniaxial stress, which results in a decreased population inversion. The discrepancy between this work and previous studies can be explained with the low compensation level of the material used here. Because the amount of ionized impurity scattering in low-compensated germanium lasers is small to begin with, the reduction in scattering with uniaxial stress does not play a significant role in changing the laser operation. Beryllium-doped germanium lasers operate based on a different mechanism of population inversion. In this material it is proposed that holes can transfer between bands by giving their energy to a neutral beryllium atom, raising the hole from the ground to a bound excited state. The free hole will then return to zero energy with some probability of entering the other band. The minimum and maximum E/B ratios for lasing change with uniaxial stress because of the change in effective mass and bound excited state energy. These limits have been calculated for the case of 300 bar [100] stress, and match very well with the observed data. This adds further credence to the proposed mechanism for population inversion in this material. In contrast to Be and Ga-doped lasers, copper-doped lasers under uniaxial stress show an increase in the range of E and B where lasing is seen. To understand this change the theoretical limits for population inversion based on both the optical phonon mechanism and the neutral acceptor mechanism have been calculated. The data are

  7. Diffusion of E centers in germanium predicted using GGA+U approach

    KAUST Repository

    Tahini, H. A.

    2011-08-17

    Density functional theory calculations (based on GGA+U approach) are used to investigate the formation and diffusion of donor-vacancy pairs (E centers) in germanium. We conclude that depending upon the Fermi energy,E centers that incorporate for phosphorous and arsenic can form in their neutral, singly negatively or doubly negatively charged states whereas with antimony only the neutral or doubly negatively charged states are predicted. The activation energies of diffusion are compared with recent experimental work and support the idea that smaller donor atoms exhibit higher diffusionactivation energies.

  8. Luminescence decay dynamics of self-assembled germanium islands in silicon

    DEFF Research Database (Denmark)

    Julsgaard, Brian; Balling, Peter; Hansen, John Lundsgaard

    2011-01-01

    The dynamics of the luminescence decay from self-assembled germanium islands embedded in crystalline silicon has been studied for temperatures varied between 16 K and room temperature. We separate the time scale for various dynamical processes by time-resolved emission spectroscopy and identify...... a characteristic time scale of Auger recombination processes around 10 ns largely independent on temperature, while two slower decay components appear on time scales around 1 μs and 10 μs, respectively, at low temperatures....

  9. Final Report for Monitoring of Reactor Antineutrinos with Compact Germanium Detectors

    Energy Technology Data Exchange (ETDEWEB)

    Orrell, John L.; Collar, J. I.

    2009-07-01

    This 2008 NCMR project has pursued measurement of the antineutrino-nucleus coherent scattering interaction using a low-energy threshold germanium gamma-ray spectrometer of roughly one-half kilogram total mass. These efforts support development of a compact system for monitoring the antineutrino emission from nuclear reactor cores. Such a monitoring system is relevant to nuclear safeguards and nuclear non-proliferation in general by adding a strong method for assuring quantitative material balance of special nuclear material in the nuclear fuel cycle used in electricity generation.

  10. Results from a Low-Energy Analysis of the CDMS II Germanium Data

    CERN Document Server

    Ahmed, Z; Arrenberg, S; Bailey, C N; Balakishiyeva, D; Baudis, L; Bauer, D A; Brink, P L; Bruch, T; Bunker, R; Cabrera, B; Caldwell, D O; Cooley, J; Cushman, P; Daal, M; DeJongh, F; Dragowsky, M R; Duong, L; Fallows, S; Figueroa-Feliciano, E; Filippini, J; Fritts, M; Golwala, S R; Hall, J; Hennings-Yeomans, R; Hertel, S A; Holmgren, D; Hsu, L; Huber, M E; Kamaev, O; Kiveni, M; Kos, M; Leman, S W; Mahapatra, R; Mandic, V; McCarthy, K A; Mirabolfathi, N; Moore, D; Nelson, H; Ogburn, R W; Phipps, A; Pyle, M; Qiu, X; Ramberg, E; Rau, W; Reisetter, A; Saab, T; Sadoulet, B; Sander, J; Schnee, R W; Seitz, D N; Serfass, B; Sundqvist, K M; Tarka, M; Wikus, P; Yellin, S; Yoo, J; Young, B A; Zhang, J

    2010-01-01

    We report results from a reanalysis of data from the Cryogenic Dark Matter Search (CDMS II) experiment at the Soudan Underground Laboratory. Data taken between October 2006 and September 2008 using eight germanium detectors are reanalyzed with a lowered, 2 keV recoil-energy threshold, to give increased sensitivity to interactions from Weakly Interacting Massive Particles (WIMPs) with masses below ~10 GeV/c^2. This analysis provides stronger constraints than previous CDMS II results for WIMP masses below 9 GeV/c^2 and excludes parameter space associated with possible low-mass WIMP signals from the DAMA/LIBRA and CoGeNT experiments.

  11. Ultra-Low-Energy Germanium Detector for Neutrino-Nucleus Coherent Scattering and Dark Matter Searches

    CERN Document Server

    Wong, Henry T

    2008-01-01

    The status and plans of a research program on the development of ultra-low-energy germanium detectors with sub-keV sensitivities are reported. We survey the scientific goals which include the observation of neutrino-nucleus coherent scattering, the studies of neutrino magnetic moments, as well as the searches of WIMP dark matter. In particular, a threshold of 100-200 eV and a sub-keV background comparable to underground experiments were achieved with prototype detectors. New limits were set for WIMPs with mass between 3-6 GeV. The prospects of the realization of full-scale experiments are discussed.

  12. Aluminum, gallium, germanium, copper, and phosphorus complexes of meso-triaryltetrabenzocorrole.

    Science.gov (United States)

    Pomarico, Giuseppe; Nardis, Sara; Naitana, Mario L; Vicente, M Graça H; Kadish, Karl M; Chen, Ping; Prodi, Luca; Genovese, Damiano; Paolesse, Roberto

    2013-04-01

    5,10,15-Triaryltetrabenzocorrole complexes of aluminum, gallium, germanium, and phosphorus were synthesized by coordination of these metal ions in the preformed triaryltetrabenzocorrole macrocycle, opening a way to the investigation of different metal complexes. The UV-vis spectra of these derivatives exhibit a red shift and broadening of all absorption bands because of the π-extended aromatic system and distortion of the molecular framework. The electrochemical and photophysical behaviors of the free base and the metal complexes of meso-triaryltetrabenzocorrole were investigated and characterized.

  13. Germanium nanopyramid arrays showing near-100% absorption in the visible regime

    Institute of Scientific and Technical Information of China (English)

    Qi Han[1; Yongqi Fu[1; Lei Jin[1; Jingjing Zhao[2; Zongwei Xu[3; Fengzhou Fang[3; Jingsong Gao[2; Weixing Yu[4

    2015-01-01

    Solar energy is regarded as one of the most plentiful sources of renewable energy. An extraordinary light-harvesting property of a germanium periodic nanopyramid array is reported in this Letter. Both our theoretical and experimental results demonstrate that the nanopyramid array can achieve perfect broadband absorption from 500- to 800-nm wavelength. Especially in the visible regime, the experimentally measured absorption can even reach 100%. Further analyses reveal that the intrinsic antireflection effect and slow-light waveguide mode play an important role in the ultra-high absorption, which is helpful for the research and development of photovoltaic devices.

  14. Co-doping with antimony to control phosphorous diffusion in germanium

    KAUST Repository

    Tahini, H. A.

    2013-02-15

    In germanium, phosphorous and antimony diffuse quickly and as such their transport must be controlled in order to design efficient n-typed doped regions. Here, density functional theory based calculations are used to predict the influence of double donor co-doping on the migration activation energies of vacancy-mediated diffusion processes. The migration energy barriers for phosphorous and antimony were found to be increased significantly when larger clusters involving two donor atoms and a vacancy were formed. These clusters are energetically stable and can lead to the formation of even larger clusters involving a number of donor atoms around a vacancy, thereby affecting the properties of devices.

  15. High-precision efficiency calibration of a high-purity co-axial germanium detector

    Energy Technology Data Exchange (ETDEWEB)

    Blank, B., E-mail: blank@cenbg.in2p3.fr [Centre d' Etudes Nucléaires de Bordeaux Gradignan, UMR 5797, CNRS/IN2P3, Université de Bordeaux, Chemin du Solarium, BP 120, 33175 Gradignan Cedex (France); Souin, J.; Ascher, P.; Audirac, L.; Canchel, G.; Gerbaux, M.; Grévy, S.; Giovinazzo, J.; Guérin, H.; Nieto, T. Kurtukian; Matea, I. [Centre d' Etudes Nucléaires de Bordeaux Gradignan, UMR 5797, CNRS/IN2P3, Université de Bordeaux, Chemin du Solarium, BP 120, 33175 Gradignan Cedex (France); Bouzomita, H.; Delahaye, P.; Grinyer, G.F.; Thomas, J.C. [Grand Accélérateur National d' Ions Lourds, CEA/DSM, CNRS/IN2P3, Bvd Henri Becquerel, BP 55027, F-14076 CAEN Cedex 5 (France)

    2015-03-11

    A high-purity co-axial germanium detector has been calibrated in efficiency to a precision of about 0.15% over a wide energy range. High-precision scans of the detector crystal and γ-ray source measurements have been compared to Monte-Carlo simulations to adjust the dimensions of a detector model. For this purpose, standard calibration sources and short-lived online sources have been used. The resulting efficiency calibration reaches the precision needed e.g. for branching ratio measurements of super-allowed β decays for tests of the weak-interaction standard model.

  16. Optical Activation of Germanium Plasmonic Antennas in the Mid-Infrared

    Science.gov (United States)

    Fischer, Marco P.; Schmidt, Christian; Sakat, Emilie; Stock, Johannes; Samarelli, Antonio; Frigerio, Jacopo; Ortolani, Michele; Paul, Douglas J.; Isella, Giovanni; Leitenstorfer, Alfred; Biagioni, Paolo; Brida, Daniele

    2016-07-01

    Impulsive interband excitation with femtosecond near-infrared pulses establishes a plasma response in intrinsic germanium structures fabricated on a silicon substrate. This direct approach activates the plasmonic resonance of the Ge structures and enables their use as optical antennas up to the mid-infrared spectral range. The optical switching lasts for hundreds of picoseconds until charge recombination redshifts the plasma frequency. The full behavior of the structures is modeled by the electrodynamic response established by an electron-hole plasma in a regular array of antennas.

  17. Experiments towards size and dopant control of germanium quantum dots for solar applications

    OpenAIRE

    2015-01-01

    While the literature for the doping of silicon quantum dots (QDs) and nanocrystals (NCs) is extensive, reports of doping their germanium analogs are sparse. We report a range of attempts to dope Ge QDs both during and post-synthesis. The QDs have been characterized by TEM, XPS, and I/V measurements of SiO2 coated QD thin films in test cells using doped Si substrates. The solution synthesis of Ge QDs by the reduction of GeCl4 with LiAlH4 results in Ge QDs with a low level of chlorine atoms on ...

  18. Structural and optical properties of axial silicon-germanium nanowire heterojunctions

    Energy Technology Data Exchange (ETDEWEB)

    Wang, X.; Tsybeskov, L., E-mail: tsybesko@njit.edu [ECE Department, New Jersey Institute of Technology, Newark, New Jersey 07102 (United States); Kamins, T. I. [Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States); Wu, X.; Lockwood, D. J. [National Research Council, Ottawa, Ontario K1A 0R6 (Canada)

    2015-12-21

    Detailed studies of the structural and optical properties of axial silicon-germanium nanowire heterojunctions show that despite the 4.2% lattice mismatch between Si and Ge they can be grown without a significant density of structural defects. The lattice mismatch induced strain is partially relieved due to spontaneous SiGe intermixing at the heterointerface during growth and lateral expansion of the Ge segment of the nanowire. The mismatch in Ge and Si coefficients of thermal expansion and low thermal conductivity of Si/Ge nanowire heterojunctions are proposed to be responsible for the thermally induced stress detected under intense laser radiation in photoluminescence and Raman scattering measurements.

  19. A New Expression for the Full Energy Peak Efficiency of a High Pure Germanium Detector

    CERN Document Server

    Medhat, M E; Awaad, Z

    2001-01-01

    An empirical expression for the full energy photo-peak efficiency in terms of gamma-ray energy (E) and the vertical distance from the detector surface (d) (i.e. efficiency = function (d,E)) has been obtained for a high pure germanium detector (HPGe) using different standard sources. Comparison of the calculated efficiencies and the experimentally measured values for the energy range from 59.5-1332.2 keV and a source-to-detector distance of 5-30 cm showed that the theoretical values agree with the experiment.

  20. Synthesis and characterization of germanium monosulphide (GeS) single crystals grown using different transporting agents

    Indian Academy of Sciences (India)

    G K Solanki; Dipika B Patel; Sandip Unadkat; M K Agarwal

    2010-05-01

    This paper reports the growth of germanium monosulphide (GeS) single crystals by vapour phase technique using different transporting agents. The single crystallinity and composition of the grown crystals have been verified by transmission electron microscopy (TEM) and energy dispersive analysis of X-rays (EDAX) respectively. Resistivity measurements have been carried out in different temperature ranges. Transport parameters, e.g. resistivity, Hall coefficient, carrier concentration and mobility have been measured at varying magnetic fields. All the experimental results have been explained.

  1. Formation and thermodynamics of gaseous germanium and tin vanadates: a mass spectrometric and quantum chemical study.

    Science.gov (United States)

    Shugurov, S M; Panin, A I; Lopatin, S I; Emelyanova, K A

    2015-06-07

    The stabilities of gaseous germanium and tin vanadates were confirmed by high temperature mass spectrometry, and its structures were determined by quantum chemical calculations. A number of gas-phase reactions involving these gaseous salts were studied. On the basis of the equilibrium constants, the standard formation enthalpies of gaseous GeV2O6 (-1520 ± 42 kJ mol(-1)) and SnV2O6 (-1520 ± 43 kJ mol(-1)) were determined at a temperature of 298 K.

  2. Enhanced shower formation in aligned thick germanium crystals and discrimination against charged hadrons

    Science.gov (United States)

    Baurichter, A.; Kirsebom, K.; Medewaldt, R.; Mikkelsen, U.; Møller, S.; Uggerhøj, E.; Worm, T.; Elsener, K.; Ballestrero, S.; Sona, P.; Romano, J.

    1995-11-01

    The distribution of the energy released in a thin silicon detector placed on the downstream side of a thick germanium single crystal bombarded with a 150 GeV electron or pion beam along directions close to the axis or along random directions has been investigated. In view of a possible application to very high energy gamma ray astronomy and particle physics, the intrinsic capability of such a device to reject, on the basis of energy discrimination, unwanted events due to charged hadrons together with the resulting loss of efficiency for the detection of showers initiated by high energy electrons, is determined as a function of the chosen energy threshold.

  3. Laplace DLTS investigation of transition metal-hydrogen complexes in germanium

    Science.gov (United States)

    Gurimskaya, Y.; Mesli, A.

    2014-02-01

    High-resolution Laplace DLTS technique has been used to examine fine structures in the carrier emission processes hidden in the broad conventional DLTS peaks recorded in germanium samples, doped by several transition metals - Ni, Cr and Fe. These structures are found to be correlated with the acceptors, related to mentioned impurities, and also with possible presence of hydrogen-related defects. A link explaining interaction of transition metals with hydrogen due to the applied chemical treatment during sample preparation process is revealed and compared to what is known in silicon.

  4. In operandi observation of dynamic annealing: A case study of boron in germanium nanowire devices

    Energy Technology Data Exchange (ETDEWEB)

    Koleśnik-Gray, Maria M.; Krstić, Vojislav, E-mail: vojislav.krstic@fau.de [Department of Physics, Chair for Applied Physics, Friedrich-Alexander University Erlangen-Nürnberg (FAU), Staudtstr. 7, 91058 Erlangen (Germany); Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), and AMBER at CRANN, Trinity College Dublin, College Green, Dublin 2 (Ireland); School of Physics, Trinity College Dublin, College Green, Dublin 2 (Ireland); Sorger, Christian; Weber, Heiko B. [Department of Physics, Chair for Applied Physics, Friedrich-Alexander University Erlangen-Nürnberg (FAU), Staudtstr. 7, 91058 Erlangen (Germany); Biswas, Subhajit; Holmes, Justin D. [Materials Chemistry and Analysis Group, Department of Chemistry, Tyndall Institute, University College Cork, Cork (Ireland); Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), and AMBER at CRANN, Trinity College Dublin, College Green, Dublin 2 (Ireland)

    2015-06-08

    We report on the implantation of boron in individual, electrically contacted germanium nanowires with varying diameter and present a technique that monitors the electrical properties of a single device during implantation of ions. This method gives improved access to study the dynamic annealing ability of the nanowire at room temperature promoted by its quasi-one-dimensional confinement. Based on electrical data, we find that the dopant activation efficiency is nontrivially diameter dependent. As the diameter decreases, a transition from a pronounced dynamic-annealing to a radiation-damage dominated regime is observed.

  5. Experimental Search for Solar Axions via Coherent Primakoff Conversion in a Germanium Spectrometer

    CERN Document Server

    Avignone, F T; Brodzinski, R; Collar, J I; Creswick, R J; Di Gregorio, D E; Farach, H A; Gattone, A O; Guérard, C K; Hasenbalg, F; Huck, H; Miley, H S; Morales, A; Morales, J; Nussinov, S; De Solorzano, A O; Reeves, J H; Villar, J; Zioutas, Konstantin

    1998-01-01

    Results are reported of an experimental search for the unique, rapidly varying temporal pattern of solar axions coherently converting into photons via the Primakoff effect in a single crystal germanium detector. This conversion is predicted when axions are incident at a Bragg angle with a crystalline plane. The analysis of approximately 1.94 kg.yr of data from the 1 kg DEMOS detector in Sierra Grande, Argentina, yields a new laboratory bound on axion-photon coupling of $g_{a\\gamma \\gamma} < 2.7\\cdot 10^{-9}$ GeV$^{-1}$, independent of axion mass up to ~ 1 keV.

  6. Commensurate germanium light emitters in silicon-on-insulator photonic crystal slabs.

    Science.gov (United States)

    Jannesari, R; Schatzl, M; Hackl, F; Glaser, M; Hingerl, K; Fromherz, T; Schäffler, F

    2014-10-20

    We report on the fabrication and characterization of silicon-on-insulator (SOI) photonic crystal slabs (PCS) with commensurately embedded germanium quantum dot (QD) emitters for near-infrared light emission. Substrate pre-patterning defines preferential nucleation sites for the self-assembly of Ge QDs during epitaxial growth. Aligned two-dimensional photonic crystal slabs are then etched into the SOI layer. QD ordering enhances the photoluminescence output as compared to PCSs with randomly embedded QDs. Rigorously coupled wave analysis shows that coupling of the QD emitters to leaky modes of the PCS can be tuned via their location within the unit cell of the PCS.

  7. Mapping the electromagnetic field confinement in the gap of germanium nanoantennas with plasma wavelength of 4.5 micrometers

    Science.gov (United States)

    Calandrini, Eugenio; Venanzi, Tommaso; Appugliese, Felice; Badioli, Michela; Giliberti, Valeria; Baldassarre, Leonetta; Biagioni, Paolo; De Angelis, Francesco; Klesse, Wolfgang M.; Scappucci, Giordano; Ortolani, Michele

    2016-09-01

    We study plasmonic nanoantennas for molecular sensing in the mid-infrared made of heavily doped germanium, epitaxially grown with a bottom-up doping process and featuring free carrier density in excess of 1020 cm-3. The dielectric function of the 250 nm thick germanium film is determined, and bow-tie antennas are designed, fabricated, and embedded in a polymer. By using a near-field photoexpansion mapping technique at λ = 5.8 μm, we demonstrate the existence in the antenna gap of an electromagnetic energy density hotspot of diameter below 100 nm and confinement volume 105 times smaller than λ3.

  8. Determination of Trace Germanium in Marine Sediments by Hydride Generation-Atomic Fluorescence Spectrometry (HG-AFS)

    Institute of Scientific and Technical Information of China (English)

    LI Jing; ZHAO Shilan; ZHANG Zhaohui; ZENG Xianjie

    2004-01-01

    A method for the analysis of trace germanium in marine sediments by HG-AFS has been investigated. The experimental conditions such as the acidity of reduction reaction, the amount of sodium boro-hydride, the carrier gas flow rate, etc., were tested and optimized by using a kind of orthogonal design. The detection limit of the presented method is 0.95 μg L-1 for germanium. The calibration curve shows a satisfactory line in the concentration range 0-320 μg L-1 Ge with a variation coefficient of ±2.1%.

  9. Enhanced electromagnetic showers initiated by 20-180 GeV gamma rays on aligned thick germanium crystals

    Energy Technology Data Exchange (ETDEWEB)

    Baurichter, A.; Kirsebom, K.; Medenwaldt, R.; Mikkelsen, U.; Moeller, S.P.; Uggerhoej, E.; Worm, T.; Kononets, Y.V.; Elsener, K.; Ballestrero, S.; Sona, P.; Biino, C.; Connell, S.H.; Sellschop, J.P.F.; Vilakazi, Z.Z.; Apyan, A.; Avakian, R.O.; Ispirian, K.A.; Taroian, S.P

    1999-06-01

    The distribution of the energy released in a silicon detector placed on the downstream side of thick germanium single crystals bombarded by 20-180 GeV gamma rays along directions close to the <1 1 0> axis or along a random direction has been investigated. A large enhancement of the shower for axial incidence of the gamma rays has been found. The response of the system composed of a germanium crystal and a silicon detector to single gamma rays as a function of their energy has been deduced and compared with existing Monte Carlo simulations.

  10. Enhanced electromagnetic showers initiated by 20-180 GeV gamma rays on aligned thick germanium crystals

    Science.gov (United States)

    Baurichter, A.; Kirsebom, K.; Medenwaldt, R.; Mikkelsen, U.; Møller, S. P.; Uggerhøj, E.; Worm, T.; Kononets, Y. V.; Elsener, K.; Ballestrero, S.; Sona, P.; Biino, C.; Connell, S. H.; Sellschop, J. P. F.; Vilakazi, Z. Z.; Apyan, A.; Avakian, R. O.; Ispirian, K. A.; Taroian, S. P.

    1999-06-01

    The distribution of the energy released in a silicon detector placed on the downstream side of thick germanium single crystals bombarded by 20-180 GeV gamma rays along directions close to the axis or along a random direction has been investigated. A large enhancement of the shower for axial incidence of the gamma rays has been found. The response of the system composed of a germanium crystal and a silicon detector to single gamma rays as a function of their energy has been deduced and compared with existing Monte Carlo simulations.

  11. Mutual phase locking of a coupled laser diode-Gunn diode pair

    OpenAIRE

    Izadpanah, S.H; Rav-Noy, Z.; Mukai, S.; Margalit, S.; Yariv, Amnon

    1984-01-01

    Mutual phase locking has been achieved through series connection of a semiconductor laser and a Gunn diode oscillator. Experimental results obtained demonstrate a mutual interaction between the two oscillators which results in a short term Gunn diode oscillator stability and improved spectral purity of its output. We also observe a narrowing of laser pulses and an improvement in regularity.

  12. Performance of the cold powered diodes and diode leads in the main magnets of the LHC

    CERN Document Server

    Willering, G P; Bajko, M; Bednarek, M; Bottura, L; Charifoulline, Z; Dahlerup-Petersen, K; Dib, G; D'Angelo, G; Gharib, A; Grand-Clement, L; Izquierdo Bermudez, S; Prin, H; Roger, V; Rowan, S; Savary, F; Tock, J-Ph; Verweij, A

    2015-01-01

    During quench tests in 2011 variations in resistance of an order of magnitude were found in the diode by-pass circuit of the main LHC magnets. An investigation campaign was started to understand the source, the occurrence and the impact of the high resistances. Many tests were performed offline in the SM18 test facility with a focus on the contact resistance of the diode to heat sink contact and the diode wafer temperature. In 2014 the performance of the diodes and diode leads of the main dipole bypass systems in the LHC was assessed during a high current qualification test. In the test a current cycle similar to a magnet circuit discharge from 11 kA with a time constant of 100 s was performed. Resistances of up to 600 μΩ have been found in the diode leads at intermediate current, but in general the high resistances decrease at higher current levels and no sign of overheating of diodes has been seen and the bypass circuit passed the test. In this report the performance of the diodes and in particular the co...

  13. Tunable diode laser control by a stepping Michelson interferometer

    Energy Technology Data Exchange (ETDEWEB)

    Valentin, A.; Nicolas, C.; Henry, L.; Mantz, A.W.

    1987-01-01

    A tunable diode laser beam is sent through a Michelson interferometer and is locked to a fringe of the diode laser interferometer pattern by controlling the diode laser polarization current. The path difference change of the Michelson interferometer is controlled step by step by a stabilized He--Ne red laser. When the interferometer path differences increases or decreases, the polarization current of the diode is forced to change in order to preserve the interference order of the diode beam. At every step the diode frequency is accurately fixed and its phase noise significantly reduced.

  14. SiC-based Schottky diode gas sensors

    Energy Technology Data Exchange (ETDEWEB)

    Hunter, G.W.; Neudeck, P.G.; Chen, L.Y. [National Aeronautics and Space Administration, Cleveland, OH (United States). Lewis Research Center; Knight, D. [Cortez/NASA Lewis Research Center, Cleveland, OH (United States); Liu, C.C.; Wu, Q.H. [Electronics Design Center, Case Western Reserve Univ., Cleveland, OH (United States)

    1998-08-01

    Silicon carbide based Schottky diode gas sensors are being developed for high temperature applications such as emission measurements. Two different types of gas sensitive diodes will be discussed in this paper. By varying the structure of the diode, one can affect the diode stability as well as the diode sensitivity to various gases. It is concluded that the ability of SiC to operate as a high temperature semiconductor significantly enhances the versatility of the Schottky diode gas sensing structure and will potentially allow the fabrication of a SiC-based gas sensor array for versatile high temperature gas sensing applications. (orig.) 6 refs.

  15. SiC-Based Schottky Diode Gas Sensors

    Science.gov (United States)

    Hunter, Gary W.; Neudeck, Philip G.; Chen, Liang-Yu; Knight, Dak; Liu, Chung-Chiun; Wu, Quing-Hai

    1997-01-01

    Silicon carbide based Schottky diode gas sensors are being developed for high temperature applications such as emission measurements. Two different types of gas sensitive diodes will be discussed in this paper. By varying the structure of the diode, one can affect the diode stability as well as the diode sensitivity to various gases. It is concluded that the ability of SiC to operate as a high temperature semiconductor significantly enhances the versatility of the Schottky diode gas sensing structure and will potentially allow the fabrication of a SiC-based gas sensor arrays for versatile high temperature gas sensing applications.

  16. Novel two-dimensional silicon and germanium allotropes: a first-principles study

    Science.gov (United States)

    Gimbert, Florian; Lee, Chi-Cheng; Friedlein, Rainer; Fleurence, Antoine; Yamada-Takamura, Yukiko; Ozaki, Taisuke

    2014-03-01

    Graphene has been extensively studied but its integration into Si-based device technologies is difficult. It has been recently predicted by first-principles calculations that freestanding silicene and germanene, the counterparts of graphene made of Si and Ge atoms respectively, have graphene-like electronic structure with a low buckled structure. So far, the models predicted by first-principles calculations were not able to describe completely the experimental results. These difficulties tend to suggest a more complex phase diagram for freestanding silicene or for silicene on a substrate than the simple buckled phase. We report for the first time a novel two-dimensional silicon and germanium allotropes, with a structure similar of that of MoS2 layer. After investigating a large range of lattice constants by first-principles calculations with OpenMX code, we show that this structure is the ground state for freestanding two-dimensional silicon and germanium layers instead of the usually considered low buckled silicene and germanene.

  17. A model for the effects of germanium on silica biomineralization in choanoflagellates

    Science.gov (United States)

    Chappell, Helen; Ratcliffe, Sarah; Goldstein, Raymond E.

    2016-01-01

    Silica biomineralization is a widespread phenomenon of major biotechnological interest. Modifying biosilica with substances like germanium (Ge) can confer useful new properties, although exposure to high levels of Ge disrupts normal biosilicification. No clear mechanism explains why this disruption occurs. Here, we study the effect of Ge on loricate choanoflagellates, a group of protists that construct a species-specific extracellular lorica from multiple siliceous costal strips. High Ge exposures were toxic, whereas lower Ge exposures produced cells with incomplete or absent loricae. These effects can be ameliorated by restoring the germanium : silicon ratio, as observed in other biosilicifying organisms. We developed simulations of how Ge interacts with polymerizing silica. In our models, Ge is readily incorporated at the ends of silica forming from silicic acid condensation, but this prevents further silica polymerization. Our ‘Ge-capping’ model is supported by observations from loricate choanoflagellates. Ge exposure terminates costal strip synthesis and lorica formation, resulting in disruption to cytokinesis and fatal build-up of silicic acid. Applying the Ge-capping model to other siliceous organisms explains the general toxicity of Ge and identifies potential protective responses in metalloid uptake and sensing. This can improve the design of new silica biomaterials, and further our understanding of silicon metabolism. PMID:27655668

  18. Efficient one-pot synthesis of monodisperse alkyl-terminated colloidal germanium nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Carolan, Darragh, E-mail: darragh.carolan@tyndall.ie; Doyle, Hugh, E-mail: hugh.doyle@tyndall.ie [University College Cork, Tyndall National Institute (Ireland)

    2014-12-15

    An efficient one-pot method for fabricating alkyl-capped germanium nanocrystals (Ge NCs) is reported. Ge NCs with a size of 3.9 ± 0.5 nm, are formed by co-reduction of germanium tetrachloride in the presence of n-butyltrichlorogermane, producing NCs with butyl-terminated surfaces. The advantage of this method is that it allows rapid synthesis and functionalisation of NCs with minimal post-synthetic purification requirements. TEM imaging showed that the Ge NCs are monodisperse and highly crystalline, while EDX and SAED confirmed the chemical identity and crystal phase of the NCs. FTIR and XPS confirmed that the Ge NCs were well passivated, with some oxidation of the nanocrystal surface. Optical spectroscopy of the NCs showed a strong absorbance in the UV region and an excitation wavelength dependent photoluminescence in the UV/violet. Time resolved photoluminescence measurements showed the presence of two nanosecond lifetime components, consistent with recombination of photogenerated excitons at low lying energy states present at the nanocrystal surface. Photoluminescence quantum yields were determined to be 37 %, one of the highest values reported for organically terminated Ge NCs.

  19. GeMini: The Next-Generation Mechanically-Cooled Germanium Spectrometer

    Energy Technology Data Exchange (ETDEWEB)

    Burks, M

    2008-11-12

    The next-generation mechanically-cooled germanium spectrometer has been developed. GeMini (MINIature GErmanium spectrometer) has been designed to bring high-resolution gamma-ray spectroscopy to a range of demanding field environments. Intended applications include short-notice inspections, border patrol, port monitoring and emergency response, where positive nuclide identification of radioactive materials is required but power and liquid cryogen are not easily available. GeMini weighs 2.75 kg for the basic instrument and 4.5 kg for the full instrument including user interface and ruggedized hermetic packaging. It is very low power allowing it to operate for 10 hours on a single set of rechargeable batteries. This instrument employs technology adapted from the gamma-ray spectrometer currently flying on NASA's Mercury MESSENGER spacecraft. Specifically, infrared shielding techniques allow for a vast reduction of thermal load. This in turn allows for a smaller, lighter-weight design, well-suited for a hand-held instrument. Three working prototypes have been built and tested in the lab. The measured energy resolution is 3 keV fwhm at 662 keV gamma-rays. This paper will focus on the design and performance of the instrument.

  20. A high resolution germanium detector array for hypernuclear studies at PANDA

    Energy Technology Data Exchange (ETDEWEB)

    Bleser, Sebastian; Sanchez Lorente, Alicia; Steinen, Marcell [Helmholtz-Institut Mainz (Germany); Gerl, Juergen; Kojouharova, Jasmina; Kojouharov, Ivan [GSI Darmstadt (Germany); Iazzi, Felice [Politecnico, Torino (Italy); INFN, Torino (Italy); Pochodzalla, Josef; Rittgen, Kai; Sahin, Cihan [Institute for Nuclear Physics, JGU Mainz (Germany)

    2014-07-01

    The PANDA experiment, planned at the FAIR facility in Darmstadt, aims at the high resolution γ-spectroscopy of double Λ hypernuclei. For this purpose a devoted detector setup is required, consisting of a primary nuclear target, an active secondary target and a germanium detector array for the γ-spectroscopy. Due to the limited space within the PANDA detector a compact design is required. In particular the conventional LN{sub 2} cooling system must be replaced by an electro mechanical device and a new arrangement of the crystals is needed. This presentation shows the progress in the development of the germanium detectors. First results of in-beam measurements at COSY with a new electro mechanically cooled single crystal prototype are presented. Digital pulse shape analysis is used to disentangle pile up events due to the high event rate. This analysis technique also allows to recover the high original energy resolution in case of neutron damage. Finally the status of the new triple crystal detector prototype is given.

  1. Silicon and Germanium Nanostructures for Photovoltaic Applications: Ab-Initio Results

    Directory of Open Access Journals (Sweden)

    Pulci Olivia

    2010-01-01

    Full Text Available Abstract Actually, most of the electric energy is being produced by fossil fuels and great is the search for viable alternatives. The most appealing and promising technology is photovoltaics. It will become truly mainstream when its cost will be comparable to other energy sources. One way is to significantly enhance device efficiencies, for example by increasing the number of band gaps in multijunction solar cells or by favoring charge separation in the devices. This can be done by using cells based on nanostructured semiconductors. In this paper, we will present ab-initio results of the structural, electronic and optical properties of (1 silicon and germanium nanoparticles embedded in wide band gap materials and (2 mixed silicon-germanium nanowires. We show that theory can help in understanding the microscopic processes important for devices performances. In particular, we calculated for embedded Si and Ge nanoparticles the dependence of the absorption threshold on size and oxidation, the role of crystallinity and, in some cases, the recombination rates, and we demonstrated that in the case of mixed nanowires, those with a clear interface between Si and Ge show not only a reduced quantum confinement effect but display also a natural geometrical separation between electron and hole.

  2. Large area Germanium Tin nanometer optical film coatings on highly flexible aluminum substrates

    Science.gov (United States)

    Jin, Lichuan; Zhang, Dainan; Zhang, Huaiwu; Fang, Jue; Liao, Yulong; Zhou, Tingchuan; Liu, Cheng; Zhong, Zhiyong; Harris, Vincent G.

    2016-09-01

    Germanium Tin (GeSn) films have drawn great interest for their visible and near-infrared optoelectronics properties. Here, we demonstrate large area Germanium Tin nanometer thin films grown on highly flexible aluminum foil substrates using low-temperature molecular beam epitaxy (MBE). Ultra-thin (10–180 nm) GeSn film-coated aluminum foils display a wide color spectra with an absorption wavelength ranging from 400–1800 nm due to its strong optical interference effect. The light absorption ratio for nanometer GeSn/Al foil heterostructures can be enhanced up to 85%. Moreover, the structure exhibits excellent mechanical flexibility and can be cut or bent into many shapes, which facilitates a wide range of flexible photonics. Micro-Raman studies reveal a large tensile strain change with GeSn thickness, which arises from lattice deformations. In particular, nano-sized Sn-enriched GeSn dots appeared in the GeSn coatings that had a thickness greater than 50 nm, which induced an additional light absorption depression around 13.89 μm wavelength. These findings are promising for practical flexible photovoltaic and photodetector applications ranging from the visible to near-infrared wavelengths.

  3. Germanium-tin interdiffusion in strained Ge/GeSn multiple-quantum-well structure

    Science.gov (United States)

    Wang, Wei; Dong, Yuan; Zhou, Qian; Tok, Eng Soon; Yeo, Yee-Chia

    2016-06-01

    The thermal stability and germanium-tin (Ge-Sn) interdiffusion properties were studied in epitaxial Ge/GeSn multiple-quantum-well (MQW) structure. No obvious interdiffusion was observed for annealing temperatures of 300 °C or below, while observable interdiffusion occurred for annealing temperatures of 380 °C and above. High-resolution x-ray diffraction was used to obtain the interdiffusion coefficient by analyzing the decrease rate of Ge/GeSn periodic satellite peaks. The interdiffusion coefficient is much higher, and the activation enthalpy of 1.21 eV is substantially lower in Ge/GeSn MQW structure than that previously reported in silicon-germanium (Si-Ge) systems. When the annealing temperature is increased to above 500 °C, Ge-Sn interdiffusion becomes severe. Some small pits appear on the surface, which should be related to Sn out-diffusion to the Ge cap layer, followed by Sn desorption from the top surface. This work provides insights into the Ge-Sn interdiffusion and Sn segregation behaviors in Ge/GeSn MQW structure, and the thermal budget that may be used for fabrication of devices comprising Ge/GeSn heterostructures.

  4. Modifying the band gap and optical properties of Germanium nanowires by surface termination

    Science.gov (United States)

    Legesse, Merid; Fagas, Giorgos; Nolan, Michael

    2017-02-01

    Semiconductor nanowires, based on silicon (Si) or germanium (Ge) are leading candidates for many ICT applications, including next generation transistors, optoelectronics, gas and biosensing and photovoltaics. Key to these applications is the possibility to tune the band gap by changing the diameter of the nanowire. Ge nanowires of different diameter have been studied with H termination, but, using ideas from chemistry, changing the surface terminating group can be used to modulate the band gap. In this paper we apply the generalised gradient approximation of density functional theory (GGA-DFT) and hybrid DFT to study the effect of diameter and surface termination using -H, -NH2 and -OH groups on the band gap of (001), (110) and (111) oriented germanium nanowires. We show that the surface terminating group allows both the magnitude and the nature of the band gap to be changed. We further show that the absorption edge shifts to longer wavelength with the -NH2 and -OH terminations compared to the -H termination and we trace the origin of this effect to valence band modifications upon modifying the nanowire with -NH2 or -OH. These results show that it is possible to tune the band gap of small diameter Ge nanowires over a range of ca. 1.1 eV by simple surface chemistry.

  5. Thermodynamic calculations of self- and hetero-diffusion parameters in germanium

    Energy Technology Data Exchange (ETDEWEB)

    Saltas, V., E-mail: vsaltas@chania.teicrete.gr; Vallianatos, F.

    2015-08-01

    In the present work, the diffusion coefficients of n- and p-type dopants (P, As, Sb, Al) and self-diffusion in crystalline germanium are calculated from the bulk elastic properties of the host material based on the cBΩ thermodynamic model. The calculated diffusion coefficients as a function of temperature and the activation enthalpies prove to be in full agreement with the reported experimental results. Additional point defect parameters such as activation entropy, activation volume and activation Gibbs free energy are also calculated for each diffusing element. The pressure dependence of self-diffusion coefficients in germanium is also verified at high temperatures (876 K–1086 K), in agreement with reported results ranging from ambient pressure up to 600 MPa and is further calculated at pressures up to 3 GPa, where the phase transition to Ge II occurs. - Highlights: • Calculation of diffusivities of n- and p-type dopants in Ge from elastic properties. • Calculation of point defect parameters according to the cBΩ thermodynamic model. • Prediction of the pressure dependence of self-diffusion coefficients in Ge.

  6. Self-assembled germanium nano-structures by laser-assisted oxidation

    Institute of Scientific and Technical Information of China (English)

    Huang Wei-Qi; Liu Shi-Rong

    2006-01-01

    The investigation on the oxidation behaviour of Si1-xGex; alloys (x=0.05, 0.15, and 0.25) is carried out. It is found for the first time that on the oxide film a germanium nano-cap with a thickness of 1.8ranging from 5.5 nm to 10 nm are formed by the low-temperature laser-assisted dry oxidation of Si1-xGex substrate. A new scanning method on the decline cross-section of the multiple-layer sample is adopted to measure the layer thickness and the composition. Some new peaks in photoluminescence (PL) spectra are discovered, which could be related to the nano-cap and the nano-particles of germanium. A suitable model and several new calculating formulae with the unrestricted Hartree-Fock-Roothaan (UHFR) method and quantum confinement analysis are proposed to interpret the PL spectra and the nano-structure mechanism in the oxide.

  7. Astroparticle physics with a customized low-background broad energy Germanium detector

    Energy Technology Data Exchange (ETDEWEB)

    Aalseth, Craig E.; Amman, M.; Avignone, Frank T.; Back, Henning O.; Barabash, Alexander S.; Barbeau, P. S.; Bergevin, M.; Bertrand, F.; Boswell, M.; Brudanin, V.; Bugg, William; Burritt, Tom H.; Busch, Matthew; Capps, Greg L.; Chan, Yuen-Dat; Collar, J. I.; Cooper, R. J.; Creswick, R.; Detwiler, Jason A.; Diaz, J.; Doe, Peter J.; Efremenko, Yuri; Egorov, Viatcheslav; Ejiri, H.; Elliott, Steven R.; Ely, James H.; Esterline, James H.; Farach, H. A.; Fast, James E.; Fields, N.; Finnerty, P.; Fujikawa, Brian; Fuller, Erin S.; Gehman, Victor M.; Giovanetti, G. K.; Guiseppe, Vincente; Gusey, K.; Hallin, A. L.; Harper, Gregory; Hazama, R.; Henning, Reyco; Hime, Andrew; Hoppe, Eric W.; Hossbach, Todd W.; Howe, M. A.; Johnson, R. A.; Keeter, K.; Keillor, Martin E.; Keller, C.; Kephart, Jeremy D.; Kidd, Mary; Knecht, A.; Kochetov, Oleg; Konovalov, S.; Kouzes, Richard T.; Leviner, L.; Loach, J. C.; Luke, P.; MacMullin, S.; Marino, Michael G.; Martin, R. D.; Mei, Dong-Ming; Miley, Harry S.; Miller, M. L.; Mizouni, Leila; Myers, Allan W.; Nomachi, Masaharu; Orrell, John L.; Peterson, David; Phillips, D.; Poon, Alan; Prior, Gersende; Qian, J.; Radford, D. C.; Rielage, Keith; Robertson, R. G. H.; Rodriguez, Larry; Rykaczewski, Krzysztof P.; Salazar, Harold; Schubert, Alexis G.; Shima, T.; Shirchenko, M.; Steele, David; Strain, J.; Swift, Gary; Thomas, K.; Timkin, V.; Tornow, W.; Van Wechel, T. D.; Vanyushin, I.; Varner, R. L.; Vetter, Kai; Wilkerson, J. F.; Wolfe, B. A.; Xiang, W.; Yakushev, E.; Yaver, Harold; Young, A.; Yu, Chang-Hong; Yumatov, Vladimir; Zhang, C.; Zimmerman, S.

    2011-10-01

    The Majorana Collaboration is building the Majorana Demonstrator, a 60 kg array of high purity germanium detectors housed in an ultra-low background shield at the Sanford Underground Laboratory in Lead, SD. The Majorana Demonstrator will search for neutrinoless double-beta decay of 76Ge while demonstrating the feasibility of a tonne-scale experiment. It may also carry out a dark matter search in the 1-10 GeV/c² mass range. We have found that customized Broad Energy Germanium (BEGe) detectors produced by Canberra have several desirable features for a neutrinoless double-beta decay experiment, including low electronic noise, excellent pulse shape analysis capabilities, and simple fabrication. We have deployed a customized BEGe, the Majorana Low-Background BEGe at Kimballton (MALBEK), in a low-background cryostat and shield at the Kimballton Underground Research Facility in Virginia. This paper will focus on the detector characteristics and measurements that can be performed with such a radiation detector in a low-background environment.

  8. Exploration Of Activity Measurements And Equilibrium Checks For Sediment Dating Using Thick-Window Germanium Detectors

    Science.gov (United States)

    Warner, Jacob A.; Fitzsimmons, Kathryn E.; Reynolds, Eva M.; Gladkis, Laura G.; Timmers, Heiko

    2011-06-01

    Activity measurements on sediment samples for trapped-charge geological dating using gamma-ray spectroscopy are an important verification of the field-site dose rate determination. Furthermore gamma-ray spectroscopy can check if the natural decay series are in secular equilibrium which is a crucial assumption in such dating. Typically the activities of leading members of the Thorium and Uranium decay series are measured, which requires Germanium detectors with thin windows and good energy resolution in order to effectively detect the associated low energy gamma-rays. Such equipment is not always readily available. The potential of conventional Germanium detectors with thick entrance window has been explored towards routine gamma-ray spectroscopy of sediment samples using higher energy gamma-rays. Alternative isotopes, such as Ac-228 and Pb-212 for the Thorium series, and Pa-234m, Ra-226 and Bi-214 for the Uranium series, have been measured in order to determine the mass-specific activity for the respective series and possibly provide a check of secular equilibrium. In addition to measurements of the K-40 activity, with the alternative approach, the activities of both decay series can be accurately determined. The secular equilibrium condition may be tested for the Thorium series. Measurement accuracy for Pa-234m is, however, not sufficient to permit also a reliable check of equilibrium for the Uranium series.

  9. Perovskite/germanium tandem: A potential high efficiency thin film solar cell design

    Science.gov (United States)

    Zi, Wei; Ren, Xiaodong; Ren, Xianpei; Wei, Qinbo; Gao, Fei; Liu, Shengzhong Frank

    2016-12-01

    Perovskite absorbs from ultraviolet (UV) to ∼800 nm, and germanium covers to 1800 nm, the combination shows excellent match in terms of solar spectrum-splitting. The optical properties of CH3NH3PbI3-xClx perovskite and single-crystalline germanium (c-Ge) tandem solar cell on a special designed substrate with triangular grating are analyzed and discussed. The finite difference time domain (FDTD) approach is used to solve the Maxwell's equations in three dimensions rigorously. By optimizing the absorption layer thickness, the current match between the top and the bottom component cells is achieved using very thin films as thin as 1500 nm. By controlling the thickness of perovskite and c-Ge to 750 nm each, high short circuit current density (Jsc) of the tandem solar cell is achieved to as high as 23.70 mA/cm2. The perovskite/c-Ge tandem thin film cell design is capable of a potential efficiency 24.88% based on the simulation.

  10. Experimental test of the background rejection, through imaging capability, of a highly segmented AGATA germanium detector

    Energy Technology Data Exchange (ETDEWEB)

    Doncel, M., E-mail: doncel@usal.e [Laboratorio de Radiaciones Ionizantes, Universidad de Salamanca (Spain); Recchia, F. [INFN sezione di Padova, Padova (Italy); Quintana, B. [Laboratorio de Radiaciones Ionizantes, Universidad de Salamanca (Spain); Gadea, A. [IFIC Valencia, Valencia (Spain); INFN Laboratori Nazionali di Legnaro, Legnaro (Italy); Farnea, E. [INFN sezione di Padova, Padova (Italy)

    2010-10-21

    The development of highly segmented germanium detectors as well as the algorithms to identify the position of the interaction within the crystal opens the possibility to locate the {gamma}-ray source using Compton imaging algorithms. While the Compton-suppression shield, coupled to the germanium detector in conventional arrays, works also as an active filter against the {gamma} rays originated outside the target, the new generation of position sensitive {gamma}-ray detector arrays has to fully rely on tracking capabilities for this purpose. In specific experimental conditions, as the ones foreseen at radioactive beam facilities, the ability to discriminate background radiation improves the sensitivity of the gamma spectrometer. In this work we present the results of a measurement performed at the Laboratori Nazionali di Legnaro (LNL) aiming the evaluation of the AGATA detector capabilities to discriminate the origin of the {gamma} rays on an event-by-event basis. It will be shown that, exploiting the Compton scattering formula, it is possible to track back {gamma} rays coming from different positions, assigning them to specific emitting locations. These imaging capabilities are quantified for a single crystal AGATA detector.

  11. Reactivity of silicon and germanium doped CNTs toward aromatic sulfur compounds: A theoretical approach

    Energy Technology Data Exchange (ETDEWEB)

    Galano, Annia [Departamento de Quimica, Universidad Autonoma Metropolitana-Iztapalapa, San Rafael Atlixco 186, Col. Vicentina. Iztapalapa, C.P. 09340 Mexico D.F. (Mexico); Instituto Mexicano del Petroleo, Eje Central Lazaro Cardenas 152, 07730 Mexico D.F. (Mexico)], E-mail: agalano@prodigy.net.mx; Francisco-Marquez, Misaela [Departamento de Quimica, Universidad Autonoma Metropolitana-Iztapalapa, San Rafael Atlixco 186, Col. Vicentina. Iztapalapa, C.P. 09340 Mexico D.F. (Mexico); Instituto Mexicano del Petroleo, Eje Central Lazaro Cardenas 152, 07730 Mexico D.F. (Mexico)

    2008-04-03

    Adsorption processes of thiophene and benzothiophene on pristine carbon nanotubes (CNTs), and on CNTs doped with Si or Ge, have been modeled with Density Functional. This is the first study on the chemical reactivity of such doped tubes. The calculated data suggest that the presence of silicon or germanium atoms in CNTs increases their reactivity toward thiophene, and benzothiophene. The adsorption of these species on pristine CNTs seems very unlikely to occur, while the addition products involving doped CNTs were found to be very stable, with respect to the isolated reactants, in terms of Gibbs free energy. Several of these adsorption processes were found to be significantly exergonic ({delta}G < 0) in non-polar liquid phase. The results reported in this work suggest that Si and Ge defects on CNTs increase their reactivity toward unsaturated species, and could make them useful in the removal processes of aromatic sulfur compounds from oil-hydrocarbons. However, according to our results, CNTs doped with Si atoms are expected to be more efficient as aromatic sulfur compounds scavengers than those doped with Ge. These results also suggest that the presence of silicon and germanium atoms in the CNTs structures enhances their reactivity toward nucleophilic molecules, compared to pristine carbon nanotubes.

  12. Astroparticle Physics with a Customized Low-Background Broad Energy Germanium Detector

    CERN Document Server

    Aalseth, C E; Avignone, F T; Back, H O; Barabash, A S; Barbeau, P S; Bergevin, M; Bertrand, F E; Boswell, M; Brudanin, V; Bugg, W; Burritt, T H; Busch, M; Capps, G; Chan, Y-D; Collar, J I; Cooper, R J; Creswick, R; Detwiler, J A; Diaz, J; Doe, P J; Efremenko, Yu; Egorov, V; Ejiri, H; Elliott, S R; Ely, J; Esterline, J; Farach, H; Fast, J E; Fields, N; Finnerty, P; Fujikawa, B; Fuller, E; Gehman, V M; Giovanetti, G K; Guiseppe, V E; Gusey, K; Hallin, A L; Harper, G C; Hazama, R; Henning, R; Hime, A; Hoppe, E W; Hossbach, T W; Howe, M A; Johnson, R A; Keeter, K J; Keillor, M; Keller, C; Kephart, J D; Kidd, M F; Knecht, A; Kochetov, O; Konovalov, S I; Kouzes, R T; Leviner, L; Loach, J C; Luke, P N; MacMullin, S; Marino, M G; Martin, R D; Mei, D -M; Miley, H S; Miller, M L; Mizouni, L; Meyers, A W; Nomachi, M; Orrell, J L; Peterson, D; Phillips, D G; Poon, A W P; Prior, G; Qian, J; Radford, D C; Rielage, K; Robertson, R G H; Rodriguez, L; Rykaczewski, K P; Salazar, H; Schubert, A G; Shima, T; Shirchenko, M; Steele, D; Strain, J; Swift, G; Thomas, K; Timkin, V; Tornow, W; Van Wechel, T D; Vanyushin, I; Varner, R L; Vetter, K; Wilkerson, J F; Wolfe, B A; Xiang, W; Yakushev, E; Yaver, H; Young, A R; Yu, C -H; Yumatov, V; Zhang, C; Zimmerman, S

    2010-01-01

    The MAJORANA Collaboration is building the MAJORANA DEMONSTRATOR, a 60 kg array of high purity germanium detectors housed in an ultra-low background shield at the Sanford Underground Laboratory in Lead, SD. The MAJORANA DEMONSTRATOR will search for neutrinoless double-beta decay of 76Ge while demonstrating the feasibility of a tonne-scale experiment. It may also carry out a dark matter search in the 1-10 GeV/c^2 mass range. We have found that customized Broad Energy Germanium (BEGe) detectors produced by Canberra have several desirable features for a neutrinoless double-beta decay experiment, including low electronic noise, excellent pulse shape analysis capabilities, and simple fabrication. We have deployed a customized BEGe, the MAJORANA Low-Background BEGe at Kimballton (MALBEK), in a low-background cryostat and shield at the Kimballton Underground Research Facility in Virginia. This paper will focus on the detector characteristics and measurements that can be performed with such a radiation detector in a ...

  13. Strontium-82 and Future Germanium-68 Production at the ARRONAX Facility

    Science.gov (United States)

    Sounalet, T.; Michel, N.; Alliot, C.; Audouin, A.; Barbet, J.; Bonraisin, A. C.; Bortoli, Y.; Bossé, V.; Bourdeau, C.; Bouvet, G.; Buhour, J. M.; Cadiou, A.; Fresneau, S.; Guillamet, M.; Haddad, F.; Laizé, J.; Milleto, T.; Milon, F.; Mokili, M.; Montavon, G.

    2014-05-01

    The ARRONAX cyclotron is fully operational since the end of 2010. It delivers projectiles (p, d, α) at high energy (up to 70 MeV for protons) and high intensity(2*375μA for protons). The main fields of application of ARRONAX are radionuclide production for nuclear medicine and irradiation of inert or living materials for radiolysis and radio-biology studies. A large part of the beam time will be used to produce radionuclides for targeted radionuclide therapy (copper-67, scandium-47 and astatine-211) as well as for PET imaging (scandium-44, copper-64, strontium-82 for rubidium-82 generators, and germanium-68 for gallium-68 generators). Since June 2012, large scale production of 82Sr has started with rubidium chloride (RbCl) targets. Several improvements are being explored which consist of changing the target material from RbCl to Rb metal and introducing an additional target behind the rubidium assembly. Thus, a target alloy of nickel/gallium for germanium-68 production has been developed. It is obtained by electroplating and exhibits a better thermal behavior than the natural gallium target used in most production facilities.

  14. ZnO decorated germanium nanoparticles as anode materials in Li-ion batteries

    Science.gov (United States)

    Kim, Tae-Hee; Park, Song Yi; Lee, Tack Ho; Jeong, Jaeki; Kim, Dong Suk; Swihart, Mark T.; Song, Hyun-Kon; Kim, Jin Young; Kim, Seongbeom

    2017-03-01

    Germanium exhibits high charge capacity and high lithium diffusivity, both are the key requirements for electrode materials in high performance lithium ion batteries (LIBs). However, high volume expansion and segregation from the electrode during charge–discharge cycling have limited use of germanium in LIBs. Here, we demonstrate that ZnO decorated Ge nanoparticles (Ge@ZnO NPs) can overcome these limitations of Ge as an LIB anode material. We produced Ge NPs at high rates by laser pyrolysis of GeH4, then coated them with solution phase synthesized ZnO NPs. Half-cell tests revealed dramatically enhanced cycling stability and higher rate capability of Ge@ZnO NPs compared to Ge NPs. Enhancements arise from the core–shell structure of Ge@ZnO NPs as well as production of metallic Zn from the ZnO layer. These findings not only demonstrate a new surface treatment for Ge NPs, but also provide a new opportunity for development of high-rate LIBs.

  15. Diode-pumped laser altimeter

    Science.gov (United States)

    Welford, D.; Isyanova, Y.

    1993-01-01

    TEM(sub 00)-mode output energies up to 22.5 mJ with 23 percent slope efficiencies were generated at 1.064 microns in a diode-laser pumped Nd:YAG laser using a transverse-pumping geometry. 1.32-micron performance was equally impressive at 10.2 mJ output energy with 15 percent slope efficiency. The same pumping geometry was successfully carried forward to several complex Q-switched laser resonator designs with no noticeable degradation of beam quality. Output beam profiles were consistently shown to have greater than 90 percent correlation with the ideal TEM(sub 00)-order Gaussian profile. A comparison study on pulse-reflection-mode (PRM), pulse-transmission-mode (PTM), and passive Q-switching techniques was undertaken. The PRM Q-switched laser generated 8.3 mJ pulses with durations as short as 10 ns. The PTM Q-switch laser generated 5 mJ pulses with durations as short as 5 ns. The passively Q-switched laser generated 5 mJ pulses with durations as short as 2.4 ns. Frequency doubling of both 1.064 microns and 1.32 microns with conversion efficiencies of 56 percent in lithium triborate and 10 percent in rubidium titanyl arsenate, respectively, was shown. Sum-frequency generation of the 1.064 microns and 1.32 microns radiations was demonstrated in KTP to generate 1.1 mJ of 0.589 micron output with 11.5 percent conversion efficiency.

  16. Destructive Single-Event Failures in Schottky Diodes

    Science.gov (United States)

    Casey, Megan C.; Lauenstein, Jean-Marie; Gigliuto, Robert A.; Wilcox, Edward P.; Phan, Anthony M.; Kim, Hak; Chen, Dakai; LaBel, Kenneth A.

    2014-01-01

    This presentation contains test results for destructive failures in DC-DC converters. We have shown that Schottky diodes are susceptible to destructive single-event effects. Future work will be completed to identify parameter that determines diode susceptibility.

  17. DC characteristics of the SiC Schottky diodes

    National Research Council Canada - National Science Library

    W Janke; A Hapka; M Oleksy

    2011-01-01

      DC characteristics of the SiC Schottky diodes The isothermal and non-isothermal characteristics of silicon carbide Schottky diodes in the wide range of currents and ambient temperatures are investigated in this paper...

  18. Stirling-Cycle Cooling For Tunable Diode Laser

    Science.gov (United States)

    Durso, Santo S.; May, Randy D.; Tuchscherer, Matthew A.; Webster, Christopher R.

    1991-01-01

    Miniature Stirling-cycle cooler effective in continously cooling PbSnTe tunable diode laser to stable operating temperature near 80 K. Simplifies laboratory diode-laser spectroscopy and instruments for use aboard aircraft and balloons.

  19. Monte Carlo uncertainty analysis of germanium detector response to gamma-rays with energies below 1 MeV

    NARCIS (Netherlands)

    Maleka, PP; Maucec, M

    2005-01-01

    Monte Carlo method was used to simulate the pulse-height response function of high-precision germanium (HPGe) detector for photon energies below 1 MeV. The calculations address the uncertainty estimation due to inadequate specifications of source positioning and to variations in the detector's physi

  20. Radial position of single-site gamma-ray interactions from a parametric pulse shape analysis of germanium detector signals

    CERN Document Server

    Orrell, J L; Cooper, M W; Kephart, J D; Seifert, C E; Orrell, John L.; Aalseth, Craig E.; Cooper, Matthew W.; Kephart, Jeremy D.; Seifert, Carolyn E.

    2007-01-01

    Pulse shape analysis of germanium gamma-ray spectrometer signals can yield information on the radial position of individual gamma-ray interactions within the germanium crystal. A parametric pulse shape analysis based on calculation of moments of the reconstructed current pulses from a closed-ended coaxial germanium detector is used to preferentially select single-site gamma-ray interactions. The double escape peak events from the 2614.5 keV gamma-ray of 208-Tl are used as a training set to optimize the single-site event selection region in the pulse shape parameter space. A collimated source of 320.1 keV gamma-rays from 51-Cr is used to scan different radial positions of the same semi-coaxial germanium detector. The previously trained single-site selection region is used to preferentially identify the single-site photoelectric absorption events from the 320.1 keV full-energy peak. From the identified events, a comparison of the pulse shape parameter space distributions between different scan positions allows ...

  1. Tailoring nanostructures in micrometer size germanium particles to improve their performance as an anode for lithium ion batteries.

    Science.gov (United States)

    Ke, Fu-Sheng; Mishra, Kuber; Jamison, Lauryn; Peng, Xin-Xing; Ma, Shu-Guo; Huang, Ling; Sun, Shi-Gang; Zhou, Xiao-Dong

    2014-04-11

    A facile and scalable single-step approach is employed to synthesize a bulk germanium electrode, which consists of nanoscale Ge-grains in ∼5 μm porous powders. This three-dimensional Ge electrode exhibits superior specific capacity (∼1500 mA h g(-1)) and cyclic performance, attributed to its unique lithiation/delithiation processes.

  2. Infrared transient grating measurements of the dynamics of hydrogen local mode vibrations in amorphous silicon-germanium

    NARCIS (Netherlands)

    Jobson, K.W.; Wells, J.P.R.; Schropp, R.E.I.; Vinh, N.Q.; Dijkhuis, J.I.

    2008-01-01

    We report on picosecond, time-resolved measurements of the vibrational relaxation and decay pathways of the Si–H and Ge–H stretching modes in hydrogenated amorphous silicon-germanium thin films (a-SiGe:H). It is demonstrated that the decay of both modes has a nonexponential shape, attributable to th

  3. Infrared transient grating measurements of the dynamics of hydrogen local mode vibrations in amorphous silicon-germanium

    NARCIS (Netherlands)

    Jobson, K. W.; Wells, J. P. R.; Schropp, R. E. I.; Vinh, N. Q.; Dijkhuis, J. I.

    2008-01-01

    We report on picosecond, time-resolved measurements of the vibrational relaxation and decay pathways of the Si-H and Ge-H stretching modes in hydrogenated amorphous silicon-germanium thin films (a-SiGe: H). It is demonstrated that the decay of both modes has a nonexponential shape, attributable to t

  4. Equation of State, Nonlinear Elastic Response, and Anharmonic Properties of Diamond-Cubic Silicon and Germanium: First-Principles Investigation

    Science.gov (United States)

    Wang, Chenju; Gu, Jianbing; Kuang, Xiaoyu; Xiang, Shikai

    2015-06-01

    Nonlinear elastic properties of diamond-cubic silicon and germanium have not been investigated sufficiently to date. Knowledge of these properties not only can help us to understand nonlinear mechanical effects but also can assist us to have an insight into the related anharmonic properties, so we investigate the nonlinear elastic behaviour of single silicon and germanium by calculating their second- and third-order elastic constants. All the results of the elastic constants show good agreement with the available experimental data and other theoretical calculations. Such a phenomenon indicates that the present values of the elastic constants are accurate and can be used to further study the related anharmonic properties. Subsequently, the anharmonic properties such as the pressure derivatives of the second-order elastic constants, Grüneisen constants of long-wavelength acoustic modes, and ultrasonic nonlinear parameters are explored. All the anharmonic properties of silicon calculated in the present work also show good agreement with the existing experimental results; this consistency not only reveals that the calculation method of the anharmonic properties is feasible but also illuminates that the anharmonic properties obtained in the present work are reliable. For the anharmonic properties of germanium, since there are no experimental result and other theoretical data till now, we hope that the anharmonic properties of germanium first offered in this work would serve as a reference for future studies.

  5. Equation of state, nonlinear elastic response, and anharmonic properties of diamond-cubic silicon and germanium. First-principles investigation

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Chenju [Sichuan Univ., Chengdu (China). Inst. of Atomic and Molecular Physics; Institute of Fluid Physics, Sichuan (China). National Key Laboratory of Shock Wave and Detonation Physics; Gu, Jianbing [Institute of Fluid Physics, Sichuan (China). National Key Laboratory of Shock Wave and Detonation Physics; Sichuan Univ., Chengdu (China). College of Physical Science and Technology; Kuang, Xiaoyu [Sichuan Univ., Chengdu (China). Inst. of Atomic and Molecular Physics; Xiang, Shikai [Institute of Fluid Physics, Sichuan (China). National Key Laboratory of Shock Wave and Detonation Physics

    2015-10-01

    Nonlinear elastic properties of diamond-cubic silicon and germanium have not been investigated sufficiently to date. Knowledge of these properties not only can help us to understand nonlinear mechanical effects but also can assist us to have an insight into the related anharmonic properties, so we investigate the nonlinear elastic behaviour of single silicon and germanium by calculating their second- and third-order elastic constants. All the results of the elastic constants show good agreement with the available experimental data and other theoretical calculations. Such a phenomenon indicates that the present values of the elastic constants are accurate and can be used to further study the related anharmonic properties. Subsequently, the anharmonic properties such as the pressure derivatives of the second-order elastic constants, Grueneisen constants of long-wavelength acoustic modes, and ultrasonic nonlinear parameters are explored. All the anharmonic properties of silicon calculated in the present work also show good agreement with the existing experimental results; this consistency not only reveals that the calculation method of the anharmonic properties is feasible but also illuminates that the anharmonic properties obtained in the present work are reliable. For the anharmonic properties of germanium, since there are no experimental result and other theoretical data till now, we hope that the anharmonic properties of germanium first offered in this work would serve as a reference for future studies.

  6. Experimental study of germanium adsorption on goethite and germanium coprecipitation with iron hydroxide: X-ray absorption fine structure and macroscopic characterization

    Science.gov (United States)

    Pokrovsky, O. S.; Pokrovski, G. S.; Schott, J.; Galy, A.

    2006-07-01

    Adsorption of germanium on goethite was studied at 25 °C in batch reactors as a function of pH (1-12), germanium concentration in solution (10 -7 to 0.002 M) and solid/solution ratio (1.8-17 g/L). The maximal surface site density determined via Ge adsorption experiments at pH from 6 to 10 is equal to 2.5 ± 0.1 μmol/m 2. The percentage of adsorbed Ge increases with pH at pH Model (SCM) which implies a constant capacitance of the electric double layer and postulates the presence of two Ge complexes, >FeO-Ge(OH)30 and >FeO-GeO(OH)2-, at the goethite-solution interface. Coprecipitation of Ge with iron oxy(hydr)oxides formed during Fe(II) oxidation by atmospheric oxygen or by Fe(III) hydrolysis in neutral solutions led to high Ge incorporations in solid with maximal Ge/Fe molar ratio close to 0.5. The molar Ge/Fe ratio in precipitated solid is proportional to that in the initial solution according to the equation (Ge/Fe) solid = k × (Ge/Fe) solution with 0.7 ⩽ k ⩽ 1.0. The structure of adsorbed and coprecipitated Ge complexes was further characterized using XAFS spectroscopy. In agreement with previous data on oxyanions adsorption on goethite, bi-dentate bi-nuclear surface complexes composed of tetrahedrally coordinated Ge attached to the corners of two adjacent Fe octahedra represent the dominant contribution to the EXAFS signal. Coprecipitated samples with Ge/Fe molar ratios >0.1, and samples not aged in solution (hydroxide at Ge/Fe molar ratio ⩽0.0001. These conditions are likely to be met in many superficial aquatic environments at the contact of anoxic groundwaters with surficial oxygenated solutions. Adsorption and coprecipitation of Ge with solid Fe oxy(hydr)oxides and organo-mineral colloids and its consequence for Ge/Si fractionation and Ge geochemical cycle are discussed.

  7. Logarithmic current electrometer using light emitting diodes

    Science.gov (United States)

    Acharya, Y. B.; Aggarwal, A. K.

    1996-02-01

    The limit of low current measurement using logarithmic current to voltage converter is improved by 6 - 7 orders of magnitude with the use of diodes of large band gap as compared with silicon diodes. Low cost commercially available light emitting diodes (LEDs) have been used for this purpose. A theoretical study and experimental measurement of device constant and reverse saturation currents of the whole class of commercially available LEDs has been carried out. A circuit has been developed which makes use of a new technique for temperature compensation and its performance is compared with the technique in common use. The performance of the amplifier is found to be stable in the temperature range 5 - 600957-0233/7/2/005/img5 for both polarity of signals from 0957-0233/7/2/005/img6 to 0957-0233/7/2/005/img7 A.

  8. Thermal diode made by nematic liquid crystal

    Energy Technology Data Exchange (ETDEWEB)

    Melo, Djair, E-mail: djfmelo@gmail.com [Instituto de Física, Universidade Federal de Alagoas, Av. Lourival Melo Mota, s/n, 57072-900 Maceió, AL (Brazil); Fernandes, Ivna [Instituto de Física, Universidade Federal de Alagoas, Av. Lourival Melo Mota, s/n, 57072-900 Maceió, AL (Brazil); Moraes, Fernando [Departamento de Física, CCEN, Universidade Federal da Paraíba, Caixa Postal 5008, 58051-900, João Pessoa, PB (Brazil); Departamento de Física, Universidade Federal Rural de Pernambuco, 52171-900 Recife, PE (Brazil); Fumeron, Sébastien [Institut Jean Lamour, Université de Lorraine, BP 239, Boulevard des Aiguillettes, 54506 Vandoeuvre les Nancy (France); Pereira, Erms [Escola Politécnica de Pernambuco, Universidade de Pernambuco, Rua Benfíca, 455, Madalena, 50720-001 Recife, PE (Brazil)

    2016-09-07

    This work investigates how a thermal diode can be designed from a nematic liquid crystal confined inside a cylindrical capillary. In the case of homeotropic anchoring, a defect structure called escaped radial disclination arises. The asymmetry of such structure causes thermal rectification rates up to 3.5% at room temperature, comparable to thermal diodes made from carbon nanotubes. Sensitivity of the system with respect to the heat power supply, the geometry of the capillary tube and the molecular anchoring angle is also discussed. - Highlights: • An escaped radial disclination as a thermal diode made by a nematic liquid crystal. • Rectifying effects comparable to those caused by carbon and boron nitride nanotubes. • Thermal rectification increasing with radius and decreasing with height of the tube. • Asymmetric BCs cause rectification from the spatial asymmetry produced by the escape. • Symmetric BCs provide rectifications smaller than those yields by asymmetric BCs.

  9. Drivers for High Power Laser Diodes

    Institute of Scientific and Technical Information of China (English)

    Yankov P; Todorov D; Saramov E

    2006-01-01

    During the last year the high power laser diodes jumped over the 1 kW level of CW power for a stack,and the commercial 1 cm bars reached 100 W output optical power at the standard wavelengths around 800 nm and 980 nm. The prices are reaching the industry acceptable levels. All Nd:YAG and fiber industrial lasers manufacturers have developed kW prototypes. Those achievements have set new requirements for the power supplies manufactuers-high and stable output current, and possibilities for fast control of the driving current, keeping safe the expensive laser diode. The fast switching frequencies also allow long range free space communications and optical range finding. The high frequencies allow the design of a 3D laser radar with high resolution and other military applications. The prospects for direct laser diode micro machining are also attractive.

  10. Deterministic polarization chaos from a laser diode

    CERN Document Server

    Virte, Martin; Thienpont, Hugo; Sciamanna, Marc

    2014-01-01

    Fifty years after the invention of the laser diode and fourty years after the report of the butterfly effect - i.e. the unpredictability of deterministic chaos, it is said that a laser diode behaves like a damped nonlinear oscillator. Hence no chaos can be generated unless with additional forcing or parameter modulation. Here we report the first counter-example of a free-running laser diode generating chaos. The underlying physics is a nonlinear coupling between two elliptically polarized modes in a vertical-cavity surface-emitting laser. We identify chaos in experimental time-series and show theoretically the bifurcations leading to single- and double-scroll attractors with characteristics similar to Lorenz chaos. The reported polarization chaos resembles at first sight a noise-driven mode hopping but shows opposite statistical properties. Our findings open up new research areas that combine the high speed performances of microcavity lasers with controllable and integrated sources of optical chaos.

  11. Optical communications. V - Light emitting diodes /LED/

    Science.gov (United States)

    Best, S. W.

    1980-10-01

    The process of assembling diode chips is discussed, along with their application in optical communications. Metal plating is performed with an evaporation technique using primarily AuGe on the back side and Al or AuZn on the front side. The assembling of LED-chips with metal casings is illustrated. The chip is mounted on a flat bottom plate and electrical contact is established by means of an alloying or adhesion procedure. A glass fiber can be attached to the diode and then fitted with a casing, or the diode can be assembled with a metal cap and a lense, or with an open cap that is sealed with a clear synthetic resin plastic. The typical emission spectra of an LED and a semiconductor laser are compared. Limitations in the operation of an LED in a photoconductor are examined, taking into account spectral line width and radiated power criteria.

  12. Diode laser and endoscopic laser surgery.

    Science.gov (United States)

    Sullins, Kenneth E

    2002-05-01

    Two functionally important differences exist between the diode laser and the carbon dioxide (CO2) laser (used more commonly in small animal surgery). Diode laser energy is delivered through a quartz fiber instead of being reflected through an articulated arm or waveguide. Quartz fibers are generally more flexible and resilient than waveguides and can be inserted through an endoscope for minimally invasive procedures. Laser-tissue interaction is the other significant difference. The CO2 laser is completely absorbed by water, which limits the effect to visible tissue. The diode wavelength is minimally absorbed by water and may affect tissue as deep as 10 mm below the surface in the free-beam mode. With proper respect for the tissue effect, these differences can be used to the advantage of the patient.

  13. Diode laser based light sources for biomedical applications

    DEFF Research Database (Denmark)

    Müller, André; Marschall, Sebastian; Jensen, Ole Bjarlin;

    2013-01-01

    Diode lasers are by far the most efficient lasers currently available. With the ever-continuing improvement in diode laser technology, this type of laser has become increasingly attractive for a wide range of biomedical applications. Compared to the characteristics of competing laser systems, diode...... imaging. This review provides an overview of the latest development of diode laser technology and systems and their use within selected biomedical applications....

  14. Semiconductor diode characterization for total skin electron irradiation.

    Science.gov (United States)

    Madrid González, O A; Rivera Montalvo, T

    2014-01-01

    In this paper, a semiconductor diode characterization was performed. The diode characterization was completed using an electron beam with 4 MeV of energy. The semiconductor diode calibration used irradiation with an electron beam in an ion chamber. "In vivo" dosimetry was also conducted. The dosimetry results revealed that the semiconductor diode was a good candidate for use in the total skin electron therapy (TSET) treatment control.

  15. Laser-diode pumped Nd:YAG lasers; Laser diode reiki Nd:YAG lasear

    Energy Technology Data Exchange (ETDEWEB)

    Yuasa, H.; Akiyama, Y.; Nakayama, M. [Toshiba Corp., Tokyo (Japan)

    2000-04-01

    Laser-diode pumped Nd:YAG lasers are expected to be applied to laser processing fields such as welding, cutting, drilling, and marking due to their potential for high efficiency and compactness. We are designing and developing laser-diode pumped Nd:YAG lasers using numerical analysis simulation techniques such as ray tracing and thermal analysis. We have succeeded in achieving a laser power of more than 3 kW with 20% efficiency, which is the best ever obtained. In addition, we have developed a laser-diode pumped green laser by second harmonic generation, for precision machining on silicon wafers. (author)

  16. Investigation of radial temperature gradients in diode pumped alkali lasers using tunable diode laser absorption spectroscopy

    Science.gov (United States)

    Fox, Charles D.; Perram, Glen P.

    2012-03-01

    Heat loads in Diode Pumped Alkali Lasers (DPAL) have been investigated using a diode laser to probe the radial dependence of the absorbance. A TiS pump laser heats the medium in a T=50-100°C cesium heat pipe with 5 Torr nitrogen used for quenching. A tunable diode laser probes the spectral absorbance of the cesium cell. Local alkali concentration, temperature, and saturation broadening modify Voigt lineshapes in the wing of the hyperfine split lines. The temperature within the pumped volume exceeds the wall temperature by almost 200 C.

  17. Characteristics of Signals Originating Near the Lithium-Diffused N+ Contact of High Purity Germanium P-Type Point Contact Detectors

    CERN Document Server

    Aguayo, E; Avignone, F T; Barabash, A S; Barton, P J; Beene, J R; Bertrand, F E; Boswell, M; Brudanin, V; Busch, M; Chan, Y-D; Christofferson, C D; Collar, J I; Combs, D C; Cooper, R J; Detwiler, J A; Doe, P J; Efremenko, Yu; Egorov, V; Ejiri, H; Elliott, S R; Esterline, J; Fast, J E; Fields, N; Finnerty, P; Fraenkle, F M; Galindo-Uribarri, A; Gehman, V M; Giovanetti, G K; Green, M P; Guiseppe, V E; Gusey, K; Hallin, A L; Hazama, R; Henning, R; Hoppe, E W; Horton, M; Howard, S; Howe, M A; Johnson, R A; Keeter, K J; Kidd, M F; Knecht, A; Kochetov, O; Konovalov, S I; Kouzes, R T; LaFerriere, B D; Leon, J; Leviner, L E; Loach, J C; Looker, Q; Luke, P N; MacMullin, S; Marino, M G; Martin, R D; Merriman, J H; Miller, M L; Mizouni, L; Nomachi, M; Orrell, J L; Overman, N R; Perumpilly, G; Phillips, D G; Poon, A W P; Radford, D C; Rielage, K; Robertson, R G H; Ronquest, M C; Schubert, A G; Shima, T; Shirchenko, M; Snavely, K J; Steele, D; Strain, J; Timkin, V; Tornow, W; Varner, R L; Vetter, K; Vorren, K; Wilkerson, J F; Yakushev, E; Yaver, H; Young, A R; Yu, C -H; Yumatov, V

    2012-01-01

    A study of signals originating near the lithium-diffused n+ contact of p-type point contact (PPC) high purity germanium detectors (HPGe) is presented. The transition region between the active germanium and the fully dead layer of the n+ contact is examined. Energy depositions in this transition region are shown to result in partial charge collection. This provides a mechanism for events with a well defined energy to contribute to the continuum of the energy spectrum at lower energies. A novel technique to quantify the contribution from this source of background is introduced. Experiments that operate germanium detectors with a very low energy threshold may benefit from the methods presented herein.

  18. Characteristics of Signals Originating near the Lithium-Diffused N+ Contact of High Purity Germanium P-Type Point Contact Detectors

    Energy Technology Data Exchange (ETDEWEB)

    Aguayo, E. [Pacific Northwest National Laboratory (PNNL); Amman, M. [Lawrence Berkeley National Laboratory (LBNL); Avignone, F. T. [University of South Carolina/ORNL; Barabash, A.S. [Institute of Theoretical & Experimental Physics, Moscow, Russia; Barton, P. J. [Lawrence Berkeley National Laboratory (LBNL); Beene, James R [ORNL; Bertrand Jr, Fred E [ORNL; Boswell, M. [Los Alamos National Laboratory (LANL); Brudanin, V. [Joint Institute for Nuclear Research, Dubna, Russia; Busch, M. [Duke University; Chan, Y-D [Lawrence Berkeley National Laboratory (LBNL); Christofferson, C. D. [South Dakota School of Mines & Technology, Rapid City, SD; Collar, Juan I. [University of Chicago; Combs, D. C. [University of North Carolina / Triangle Universities Nuclear Lababoratory, Durham; Cooper, Reynold J [ORNL; Detwiler, J.A. [Lawrence Berkeley National Laboratory (LBNL); Doe, P. J. [University of Washington; Efremenko, Yuri [University of Tennessee (UTK) and Oak Ridge National Laboratory (ORNL); Egorov, V. [Joint Institute for Nuclear Research, Dubna, Russia; Ejiri, H. [Osaka University; Elliott, S. R. [Los Alamos National Laboratory (LANL); Esterline, J. [Duke University; Fast, J.E. [Pacific Northwest National Laboratory (PNNL); Fields, N. [University of Chicago; Finnerty, P. [University of North Carolina / Triangle Universities Nuclear Lababoratory, Durham; Fraenkle, F. M. [University of North Carolina / Triangle Universities Nuclear Lababoratory, Durham; Galindo-Uribarri, Alfredo {nmn} [ORNL; Gehman, V. M. [Los Alamos National Laboratory (LANL); Giovanetti, G. K. [Univ, of North Carolina & Triangle Universities Nucl. Lab - Durham, NC; Green, M. P. [University of North Carolina / Triangle Universities Nuclear Lababoratory, Durham; Guiseppe, V.E. [University of South Dakota; Gusey, K. [Joint Institute for Nuclear Research, Dubna, Russia; Hallin, A. L. [University of Alberta, Edmonton, Canada; Hazama, R. [Osaka University; Henning, R. [Univ, of North Carolina & Triangle Universities Nucl. Lab - Durham, NC; Hoppe, E.W. [Pacific Northwest National Laboratory (PNNL); Horton, M. [South Dakota School of Mines & Technology, Rapid City, SD; Howard, S. [South Dakota School of Mines and Technology; Howe, M. A. [University of North Carolina / Triangle Universities Nuclear Lababoratory, Durham; Johnson, R. A. [University of Washington, Seattle; Keeter, K.J. [Black Hills State University, Spearfish, SD; Kidd, M. F. [Los Alamos National Laboratory (LANL); Knecht, A. [University of Washington, Seattle; Kochetov, O. [Joint Institute for Nuclear Research, Dubna, Russia; Konovalov, S.I. [Institute of Theoretical & Experimental Physics, Moscow, Russia; Kouzes, R. T. [Pacific Northwest National Laboratory (PNNL); LaFerriere, B. D. [Pacific Northwest National Laboratory (PNNL); Leon, J. [University of Washington, Seattle; Leviner, L. E. [University of North Carolina / Triangle Universities Nuclear Lababoratory, Durham; Loach, J.C. [Lawrence Berkeley National Laboratory (LBNL); Looker, Q. [Lawrence Berkeley National Laboratory (LBNL); Luke, P.N. [Lawrence Berkeley National Laboratory (LBNL); MacMullin, S. [University of North Carolina / Triangle Universities Nuclear Lababoratory, Durham; Marino, M. G. [University of Washington, Seattle; Martin, R.D. [Lawrence Berkeley National Laboratory (LBNL); Merriman, J. H. [Pacific Northwest National Laboratory (PNNL); Miller, M. L. [University of Washington, Seattle; Mizouni, L. [PPNL/Univ. of South Carolina; Nomachi, M. [Osaka University; Orrell, John L. [Pacific Northwest National Laboratory (PNNL); Overman, N. R. [Pacific Northwest National Laboratory (PNNL); Perumpilly, G. [University of South Dakota; Phillips II, D. G. [University of North Carolina / Triangle Universities Nuclear Lababoratory, Durham; Poon, A.W.P. [Lawrence Berkeley National Laboratory (LBNL); et al.

    2013-01-01

    A study of signals originating near the lithium-diffused n+ contact of p-type point contact (PPC) high purity germanium detectors (HPGe) is presented. The transition region between the active germanium and the fully dead layer of the n+ contact is examined. Energy depositions in this transition region are shown to result in partial charge collection. This provides a mechanism for events with a well defined energy to contribute to the continuum of the energy spectrum at lower energies. A novel technique to quantify the contribution from this source of background is introduced. Experiments that operate germanium detectors with a very low energy threshold may benefit from the methods presented herein.

  19. Diode lasers and photonic integrated circuits

    CERN Document Server

    Coldren, Larry A; Mashanovitch, Milan L

    2011-01-01

    Diode Lasers and Photonic Integrated Circuits, Second Edition provides a comprehensive treatment of optical communication technology, its principles and theory, treating students as well as experienced engineers to an in-depth exploration of this field. Diode lasers are still of significant importance in the areas of optical communication, storage, and sensing. Using the the same well received theoretical foundations of the first edition, the Second Edition now introduces timely updates in the technology and in focus of the book. After 15 years of development in the field, this book wil

  20. Phase-change radiative thermal diode

    CERN Document Server

    Ben-Abdallah, Philippe

    2013-01-01

    A thermal diode transports heat mainly in one preferential direction rather than in the opposite direction. This behavior is generally due to the non-linear dependence of certain physical properties with respect to the temperature. Here we introduce a radiative thermal diode which rectifies heat transport thanks to the phase transitions of materials. Rectification coefficients greater than 70% and up to 90% are shown, even for small temperature differences. This result could have important applications in the development of futur contactless thermal circuits or in the conception of radiative coatings for thermal management.

  1. Planar jumping-drop thermal diodes

    Science.gov (United States)

    Boreyko, Jonathan B.; Zhao, Yuejun; Chen, Chuan-Hua

    2011-12-01

    Phase-change thermal diodes rectify heat transport much more effectively than solid-state ones, but are limited by either the gravitational orientation or one-dimensional configuration. Here, we report a planar phase-change diode scalable to large areas with an orientation-independent diodicity of over 100, in which water/vapor is enclosed by parallel superhydrophobic and superhydrophilic plates. The thermal rectification is enabled by spontaneously jumping dropwise condensate which only occurs when the superhydrophobic surface is colder than the superhydrophilic surface.

  2. An all-silicon passive optical diode.

    Science.gov (United States)

    Fan, Li; Wang, Jian; Varghese, Leo T; Shen, Hao; Niu, Ben; Xuan, Yi; Weiner, Andrew M; Qi, Minghao

    2012-01-27

    A passive optical diode effect would be useful for on-chip optical information processing but has been difficult to achieve. Using a method based on optical nonlinearity, we demonstrate a forward-backward transmission ratio of up to 28 decibels within telecommunication wavelengths. Our device, which uses two silicon rings 5 micrometers in radius, is passive yet maintains optical nonreciprocity for a broad range of input power levels, and it performs equally well even if the backward input power is higher than the forward input. The silicon optical diode is ultracompact and is compatible with current complementary metal-oxide semiconductor processing.

  3. Investigation of MIM Diodes for RF Applications

    KAUST Repository

    Khan, Adnan

    2015-05-01

    Metal Insulator Metal (MIM) diodes that work on fast mechanism of tunneling have been used in a number of very high frequency applications such as (Infra-Red) IR detectors and optical Rectennas for energy harvesting. Their ability to operate under zero bias condition as well as the possibility of realizing them through printing makes them attractive for (Radio Frequency) RF applications. However, MIM diodes have not been explored much for RF applications. One reason preventing their widespread RF use is the requirement of a very thin oxide layer essential for the tunneling operation that requires sophisticated nano-fabrication processes. Another issue is that the reliability and stable performance of MIM diodes is highly dependent on the surface roughness of the metallic electrodes. Finally, comprehensive RF characterization has not been performed for MIM diodes reported in the literature, particularly from the perspective of their integration with antennas as well as their rectification abilities. In this thesis, various metal deposition methods such as sputtering, electron beam evaporation, and Atomic Layer Deposition (ALD) are compared in pursuit of achieving low surface roughness. It is worth mentioning here that MIM diodes realized through ALD method have been presented for the first time in this thesis. Amorphous metal alloy have also been investigated in terms of their low surface roughness. Zinc-oxide has been investigated for its suitability as a thin dielectric layer for MIM diodes. Finally, comprehensive RF characterization of MIM diodes has been performed in two ways: 1) by standard S-parameter methods, and 2) by investigating their rectification ability under zero bias operation. It is concluded from the Atomic Force Microscopy (AFM) imaging that surface roughness as low as sub 1 nm can be achieved reliably from crystalline metals such as copper and platinum. This value is comparable to surface roughness achieved from amorphous alloys, which are non

  4. Thermal diode made by nematic liquid crystal

    Science.gov (United States)

    Melo, Djair; Fernandes, Ivna; Moraes, Fernando; Fumeron, Sébastien; Pereira, Erms

    2016-09-01

    This work investigates how a thermal diode can be designed from a nematic liquid crystal confined inside a cylindrical capillary. In the case of homeotropic anchoring, a defect structure called escaped radial disclination arises. The asymmetry of such structure causes thermal rectification rates up to 3.5% at room temperature, comparable to thermal diodes made from carbon nanotubes. Sensitivity of the system with respect to the heat power supply, the geometry of the capillary tube and the molecular anchoring angle is also discussed.

  5. Laser diode initiated detonators for space applications

    Science.gov (United States)

    Ewick, David W.; Graham, J. A.; Hawley, J. D.

    1993-01-01

    Ensign Bickford Aerospace Company (EBAC) has over ten years of experience in the design and development of laser ordnance systems. Recent efforts have focused on the development of laser diode ordnance systems for space applications. Because the laser initiated detonators contain only insensitive secondary explosives, a high degree of system safety is achieved. Typical performance characteristics of a laser diode initiated detonator are described in this paper, including all-fire level, function time, and output. A finite difference model used at EBAC to predict detonator performance, is described and calculated results are compared to experimental data. Finally, the use of statistically designed experiments to evaluate performance of laser initiated detonators is discussed.

  6. External cavity diode laser around 657 nm

    Institute of Scientific and Technical Information of China (English)

    Desheng Lǖ (吕德胜); Kaikai Huang (黄凯凯); Fengzhi Wang (王凤芝); DonghaiYang (杨东海)

    2003-01-01

    Operating a laser diode in an external cavity, which provides frequency-selective feedback, is a very effective method to tune the laser frequency to a range far from its free running frequency. For the Ca atomic Ramsey spectroscopy experiment, we have constructed a 657-nm laser system based on the LittmanMetcalf configuration with a 660-nm commercial laser diode. Continuously 10-GHz tuning range was achieved with about 100-kHz spectral linewidth, measured with beat-note spectrum of two identical laser systems.

  7. Linear variable voltage diode capacitor and adaptive matching networks

    NARCIS (Netherlands)

    Larson, L.E.; De Vreede, L.C.N.

    2006-01-01

    An integrated variable voltage diode capacitor topology applied to a circuit providing a variable voltage load for controlling variable capacitance. The topology includes a first pair of anti-series varactor diodes, wherein the diode power-law exponent n for the first pair of anti-series varactor di

  8. Linear variable voltage diode capacitor and adaptive matching networks

    NARCIS (Netherlands)

    Larson, L.E.; De Vreede, L.C.N.

    2006-01-01

    An integrated variable voltage diode capacitor topology applied to a circuit providing a variable voltage load for controlling variable capacitance. The topology includes a first pair of anti-series varactor diodes, wherein the diode power-law exponent n for the first pair of anti-series varactor

  9. A 640 GHz Planar-Diode Fundamental Mixer/Receiver

    Science.gov (United States)

    Siegel, P.; Mehdi, I.; Dengler, R.; Lee, T.; Humphrey, D.; Pease, A.

    1998-01-01

    The design and performance of a 640 GHz solid-state receiver using a fundamental planar-Schottky-diode mixer, InP Gunn diode oscillator, whisker-contacted Schottky-varactor-diode sextupler and folded-Fabry-Perot diplexer are reported.

  10. Comparison of ultrasonic-assisted and regular leaching of germanium from by-product of zinc metallurgy.

    Science.gov (United States)

    Zhang, Libo; Guo, Wenqian; Peng, Jinhui; Li, Jing; Lin, Guo; Yu, Xia

    2016-07-01

    A major source of germanium recovery and also the source of this research is the by-product of lead and zinc metallurgical process. The primary purpose of the research is to investigate the effects of ultrasonic assisted and regular methods on the leaching yield of germanium from roasted slag containing germanium. In the study, the HCl-CaCl2 mixed solution is adopted as the reacting system and the Ca(ClO)2 used as the oxidant. Through six single factor (leaching time, temperature, amount of Ca(ClO)2, acid concentration, concentration of CaCl2 solution, ultrasonic power) experiments and the comparison of the two methods, it is found the optimum collective of germanium for ultrasonic-assisted method is obtained at temperature 80 °C for a leaching duration of 40 min. The optimum concentration for hydrochloric acid, CaCl2 and oxidizing agent are identified to be 3.5 mol/L, 150 g/L and 58.33 g/L, respectively. In addition, 700 W is the best ultrasonic power and an over-high power is adverse in the leaching process. Under the optimum condition, the recovery of germanium could reach up to 92.7%. While, the optimum leaching condition for regular leaching method is same to ultrasonic-assisted method, except regular method consume 100 min and the leaching rate of Ge 88.35% is lower about 4.35%. All in all, the experiment manifests that the leaching time can be reduced by as much as 60% and the leaching rate of Ge can be increased by 3-5% with the application of ultrasonic tool, which is mainly thanks to the mechanical action of ultrasonic.

  11. Self-aligned metal double-gate junctionless p-channel low-temperature polycrystalline-germanium thin-film transistor with thin germanium film on glass substrate

    Science.gov (United States)

    Hara, Akito; Nishimura, Yuya; Ohsawa, Hiroki

    2017-03-01

    Low-temperature (LT) polycrystalline-germanium (poly-Ge) thin-film transistors (TFTs) are viable contenders for use in the backplanes of flat-panel displays and in systems-on-glass because of their superior electrical properties compared with silicon and oxide semiconductors. However, LT poly-Ge shows strong p-type characteristics. Therefore, it is not easy to reduce the leakage current using a single-gate structure such as a top-gate or bottom-gate structure. In this study, self-aligned planar metal double-gate p-channel junctionless LT poly-Ge TFTs are fabricated on a glass substrate using a 15-nm-thick solid-phase crystallized poly-Ge film and aluminum-induced lateral metallization source-drain regions (Al-LM-SD). A nominal field-effect mobility of 19 cm2 V-1 s-1 and an on/off ratio of 2 × 103 were obtained by optimizing the Al-LM-SD on a glass substrate through a simple, inexpensive LT process.

  12. Final report for EDI energy conservation with diode light; Slutrapport for EDI energibesparelser med diodelys

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2006-07-01

    The aim of this project has been to develop technological knowledge and a competence platform for utilization of new light emitting diode technology for general lighting purposes. Furthermore the project has aimed at developing a 3 W light diode bulb to replace 15-20 W filament bulbs and halogen spotlights, and thereby demonstrating a large energy conservation potential in the use of LED technology for lighting purposes. (BA)

  13. Electronically controlled heat sink for high-power laser diodes

    Science.gov (United States)

    Vetrovec, John

    2009-05-01

    We report on a novel electronically controlled active heat sink for high-power laser diodes offering unparalleled capacity in high-heat flux handling and temperature control. The heat sink receives diode waste heat at high flux and transfers it at reduced flux to environment, coolant fluid, heat pipe, or structure. Thermal conductance of the heat sink is electronically adjustable, allowing for precise control of diode temperature and the diode light wavelength. When pumping solid-state or alkaline vapor lasers, diode wavelength can be precisely temperature-tuned to the gain medium absorption features. This paper presents the heat sink physics, engineering design, and performance modeling.

  14. Coherent polarization locking of a diode emitter array.

    Science.gov (United States)

    Ng, S P; Phua, P B

    2009-07-01

    We present our work on the coherent combining of an array of diode emitters in a conventional diode bar configuration using the coherent polarization locking technique. An external laser cavity is designed so that the diode emissions from four diode emitters are spatially overlapped and passively phase locked via a series of birefringent walk-off crystals and a polarizing beam splitter. This concept was experimentally demonstrated up to 1030 mW of coherently combined power and was shown to increase the laser brightness of the diode bar by approximately 50 times.

  15. Study on the Beam Quality of Uncoupled Laser Diode Arrays

    Institute of Scientific and Technical Information of China (English)

    GAO Chunqing; WEI Guanghui

    2001-01-01

    The beam quality of uncoupled laser diode array is studied theoretically and experimentally. By calculating the second order moments of the beam emitted from the laser diode array, the dependence of the M2-factor of the laser diode array on the M2-factor of the single emitter, the ratio of the emitting region to the non-emitting space, and the number of emitters, has been deduced. From the measurement of the beam propagation the M2-factor of a laser diode bar is experimentally determined. The measured M2-factor of the laser diode bar agrees with the theoretical prediction.

  16. High-power green diode laser systems for biomedical applications

    DEFF Research Database (Denmark)

    Müller, André

    Due to their unique characteristics, diode lasers are increasingly attractive for numerous applications. For example, in the biomedical field the provided output power, spatial quality, and wavelength coverage of diode lasers has enabled their applications in, e.g., dermatology, diffuse spectrosc......Due to their unique characteristics, diode lasers are increasingly attractive for numerous applications. For example, in the biomedical field the provided output power, spatial quality, and wavelength coverage of diode lasers has enabled their applications in, e.g., dermatology, diffuse......, the obtained results clearly strengthen the application potential of diode lasers, including the biomedical field....

  17. Europium-155 in Debris from Nuclear Weapons

    DEFF Research Database (Denmark)

    Aarkrog, Asker; Lippert, Jørgen Emil

    1967-01-01

    The lithium-drifted germanium detector enables determination of europium-155 on a routine basis in environmental samples contaminated with debris from nuclear weapons. From measurements of europium-155, cesium-144, and strontium-90 in air filters collected between 1961 and 1966, the yield...... of europium-155 from weapons was estimated at 1400 atoms per 10$^{6}$ fissions, which is close to the yield of europium-155 from fast fission of uranium-238....

  18. 2-D Design of Schottky Diodes

    Science.gov (United States)

    2000-09-29

    Schottky diode with- Lb, rse = 2.5 ,im as can be observed in figure 3. 25 ........... ...... ..... Series roi~ttarce for *ý,,,,-io irm. Ii bsai.10in 0...epitaxial layer Wp ( rse < 𔃽 -4), which is typical 4D0 ............. . . for submillimeter varactors. Of course, the influence of the .............. ~ L

  19. Tunnel Diode Discriminator with Fixed Dead Time

    DEFF Research Database (Denmark)

    Diamond, J. M.

    1965-01-01

    A solid state discriminator for the range 0.4 to 10 V is described. Tunnel diodes are used for the discriminator element and in a special fixed dead time circuit. An analysis of temperature stability is presented. The regulated power supplies are described, including a special negative resistance...

  20. Superluminescent Diode Light Sources for OCT

    Science.gov (United States)

    Shidlovski, Vladimir R.

    Contrary to laser diodes, the path of superluminescent diodes (SLDs) to widespread practical use was much longer. There was always a scientific interest in "superluminescent" light output from laser diode structures slightly below threshold that might be considerably enhanced by "damping" of the laser resonator. SLD design efforts were intensified in early 1980s when it was proved that they are "light sources of choice" for fiber-optic gyroscopes. The next wave of interest to SLDs as a "stand-alone" type of semiconductor emitters was related to advances in OCT technologies. Challenging OCT requirements, e.g. simultaneous high-power, high brightness and very low coherence length of a light source, resulted in the development of new generation of SLDs characterized by output power and brightness the same as that of medium-to-high power laser diodes, but with the spectral width and flatness of edge-emitting LEDs. In this chapter, the main principles of the development of powerful broadband SLDs and ultra-low-coherence SLD-based light sources in 650-1600 nm spectral range, and the main parameters reported to date, are reviewed. Important aspects of SLD use in practice are discussed.

  1. Light-Emitting Diodes: Learning New Physics

    Science.gov (United States)

    Planinšic, Gorazd; Etkina, Eugenia

    2015-01-01

    This is the third paper in our Light-Emitting Diodes series. The series aims to create a systematic library of LED-based materials and to provide the readers with the description of experiments and pedagogical treatment that would help their students construct, test, and apply physics concepts and mathematical relations. The first paper, published…

  2. Light-Emitting Diodes: Solving Complex Problems

    Science.gov (United States)

    Planinšic, Gorazd; Etkina, Eugenia

    2015-01-01

    This is the fourth paper in our Light-Emitting Diodes series. The series aims to create a systematic library of LED-based materials and to provide readers with the description of experiments and the pedagogical treatment that would help their students construct, test, and apply physics concepts and mathematical relations. The first paper provided…

  3. Light-Emitting Diodes: A Hidden Treasure

    Science.gov (United States)

    Planinšic, Gorazd; Etkina, Eugenia

    2014-01-01

    LEDs, or light-emitting diodes, are cheap, easy to purchase, and thus commonly used in physics instruction as indicators of electric current or as sources of light (Fig. 1). In our opinion LEDs represent a unique piece of equipment that can be used to collect experimental evidence, and construct and test new ideas in almost every unit of a general…

  4. Achromatic optical diode in fiber optics

    CERN Document Server

    Berent, Michal; Vitanov, Nikolay V

    2013-01-01

    We propose a broadband optical diode, which is composed of one achromatic reciprocal quarter-wave plate and one non-reciprocal quarter-wave plate, both placed between two crossed polarizers. The presented design of achromatic wave plates relies on an adiabatic evolution of the Stokes vector, thus, the scheme is robust and efficient. The possible simple implementation using fiber optics is suggested.

  5. Light-Emitting Diodes: A Hidden Treasure

    Science.gov (United States)

    Planinšic, Gorazd; Etkina, Eugenia

    2014-01-01

    LEDs, or light-emitting diodes, are cheap, easy to purchase, and thus commonly used in physics instruction as indicators of electric current or as sources of light (Fig. 1). In our opinion LEDs represent a unique piece of equipment that can be used to collect experimental evidence, and construct and test new ideas in almost every unit of a general…

  6. Phosphorescent Nanocluster Light-Emitting Diodes.

    Science.gov (United States)

    Kuttipillai, Padmanaban S; Zhao, Yimu; Traverse, Christopher J; Staples, Richard J; Levine, Benjamin G; Lunt, Richard R

    2016-01-13

    Devices utilizing an entirely new class of earth abundant, inexpensive phosphorescent emitters based on metal-halide nanoclusters are reported. Light-emitting diodes with tunable performance are demonstrated by varying cation substitution to these nanoclusters. Theoretical calculations provide insight about the nature of the phosphorescent emitting states, which involves a strong pseudo-Jahn-Teller distortion.

  7. Monolithic resonant optical reflector laser diodes

    Science.gov (United States)

    Hirata, T.; Suehiro, M.; Maeda, M.; Hihara, M.; Hosomatsu, H.

    1991-10-01

    The first monolithic resonant optical reflector laser diode that has a waveguide directional coupler and two DBR reflectors integrated by compositional disordering of quantum-well heterostructures is described. A linewidth of 440 kHz was obtained, and this value is expected to be greatly decreased by reducing the propagation loss in the integrated waveguide.

  8. Diode pumped Nd:YAG laser development

    Science.gov (United States)

    Reno, C. W.; Herzog, D. G.

    1976-01-01

    A low power Nd:YAG laser was constructed which employs GaAs injection lasers as a pump source. Power outputs of 125 mW TEM CW with the rod at 250 K and the pump at 180 K were achieved for 45 W input power to the pump source. Operation of the laser, with array and laser at a common heat sink temperature of 250 K, was inhibited by difficulties in constructing long-life GaAs LOC laser arrays. Tests verified pumping with output power of 20 to 30 mW with rod and pump at 250 K. Although life tests with single LOC GaAs diodes were somewhat encouraging (with single diodes operating as long as 9000 hours without degradation), failures of single diodes in arrays continue to occur, and 50 percent power is lost in a few hundred hours at 1 percent duty factor. Because of the large recent advances in the state of the art of CW room temperature AlGaAs diodes, their demonstrated lifetimes of greater than 5,000 hours, and their inherent advantages for this task, it is recommended that these sources be used for further CW YAG injection laser pumping work.

  9. A CW Gunn Diode Switching Element.

    Science.gov (United States)

    Hurtado, Marco; Rosenbaum, Fred J.

    As part of a study of the application of communication satellites to educational development, certain technical aspects of such a system were examined. A current controlled bistable switching element using a CW Gunn diode is reported on here. With modest circuits switching rates of the order of 10 MHz have been obtained. Switching is initiated by…

  10. A CW Gunn diode bistable switching element.

    Science.gov (United States)

    Hurtado, M.; Rosenbaum, F. J.

    1972-01-01

    Experiments with a current-controlled bistable switching element using a CW Gunn diode are reported. Switching rates of the order of 10 MHz have been obtained. Switching is initiated by current pulses of short duration (5-10 ns). Rise times of the order of several nanoseconds could be obtained.

  11. Determining Extinction Ratio Of A Laser Diode

    Science.gov (United States)

    Unger, Glenn L.

    1992-01-01

    Improved technique to determine extinction ratio of pulsed laser diode based partly on definition of extinction ratio applicable to nonideal laser pulses. Heretofore, determinations involved assumption of ideal laser pulses, and neglected optical power from background light. Because power fluctuates during real pulse, more realistic to define extinction ratio in terms of energy obtained.

  12. Microring Diode Laser for THz Generation

    DEFF Research Database (Denmark)

    Mariani, S.; Andronico, A.; Favero, I.;

    2013-01-01

    We report on the modeling and optical characterization of AlGaAs/InAs quantum-dot microring diode lasers designed for terahertz (THz) difference frequency generation (DFG) between two whispering gallery modes (WGMs) around 1.3 $\\mu$m. In order to investigate the spectral features of this active...

  13. Light-Emitting Diodes: Learning New Physics

    Science.gov (United States)

    Planinšic, Gorazd; Etkina, Eugenia

    2015-01-01

    This is the third paper in our Light-Emitting Diodes series. The series aims to create a systematic library of LED-based materials and to provide the readers with the description of experiments and pedagogical treatment that would help their students construct, test, and apply physics concepts and mathematical relations. The first paper, published…

  14. High-Performance Single Nanowire Tunnel Diodes

    DEFF Research Database (Denmark)

    Wallentin, Jesper; Persson, Johan Mikael; Wagner, Jakob Birkedal

    2010-01-01

    We demonstrate single nanowire tunnel diodes with room temperature peak current densities of up to 329 A/cm(2). Despite the large surface to volume ratio of the type-II InP-GaAs axial heterostructure nanowires, we measure peak to valley current ratios (PVCR) of up to 8.2 at room temperature and 2...

  15. Determination of the Peltier Coefficient of Germanium in a Vertical Bridgeman-Stockbarger Furnace

    Science.gov (United States)

    Weigel, Michaela E. K.; Matthiesen, David H.

    1997-01-01

    The Peltier effect is the fundamental mechanism that makes interface demarcation through current pulsing possible. If a method for calculating the necessary current density for effective demarcation is to be developed, it will be necessary to know the value of the Peltier coefficient. This study determined experimentally the value of the Peltier coefficient for gallium-doped germanium by comparing the change in average growth rates between current-on and current-off periods. Current-on and current-off layer thickness measurements were made using differential interference contrast microscopy and atomic force microscopy. It was found that the Joule and Thomson effects could not be neglected. Peltier coefficients calculated from the experimental data with an analysis that accounts for Joule, Thomson, and Peltier effects yielded an average value for the Peltier coefficient of 0.076 +/- 0.015 V.

  16. Advanced characterization of carrier profiles in germanium using micro-machined contact probes

    DEFF Research Database (Denmark)

    Clarysse, T.; Konttinen, M.; Parmentier, B.;

    2012-01-01

    The accurate determination of the sheet resistance and carrier depth profile, i.e. active dopant profile, of shallow junction isolated structures involving new high mobility materials, such as germanium, is a crucial topic for future CMOS development. In this work, we discuss the capabilities...... of new concepts based on micro machined, closely spaced contact probes (10 μm pitch). When using four probes to perform sheet resistance measurements, a quantitative carrier profile extraction based on the evolution of the sheet resistance versus depth along a beveled surface is obtained. Considering...... the use of only two probes, a spreading resistance like setup is obtained with small spacing and drastically reduced electrical contact radii (~10 nm) leading to a substantial reduction of the correction factors which are normally required for converting spreading resistance profiles. We demonstrate...

  17. Analysis of proton single-particle properties of zinc and germanium isotopes

    Energy Technology Data Exchange (ETDEWEB)

    Bespalova, O. V., E-mail: besp@sinp.msu.ru; Ermakova, T. A.; Klimochkina, A. A.; Romanovsky, E. A.; Spasskaya, T. I. [Moscow State University, Skobeltsyn Institute of Nuclear Physics (Russian Federation)

    2014-12-15

    Experimental proton single-particle energies in the vicinity of the Fermi energy for stable zinc and germanium isotopes are analyzed on the basis the dispersive optical model. The values found for the parameters of the dispersive optical potential are corrected with the aim of matching the total number of protons that is calculated with the aid of the function of Bardeen-Cooper-Schrieffer theory for the occupation probability for single-particle orbits with the charge number Z of the nucleus. The parameters of the dispersive optical potential are extrapolated on the basis of physically motivated arguments to the region of unstable isotopes in which the number N ranges between 34 and 50, and single-particle spectra are predicted by means of calculations with these parameters.

  18. Demonstration of surface electron rejection with interleaved germanium detectors for dark matter searches

    Energy Technology Data Exchange (ETDEWEB)

    Agnese, R.; Balakishiyeva, D.; Saab, T.; Welliver, B. [Department of Physics, University of Florida, Gainesville, Florida 32611 (United States); Anderson, A. J.; Figueroa-Feliciano, E.; Hertel, S. A.; McCarthy, K. A. [Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Basu Thakur, R. [Fermi National Accelerator Laboratory, Batavia, Illinois 60510 (United States); Department of Physics, University of Illinois at Urbana-Champaign, Urbana, Illnois 61801 (United States); Bauer, D. A.; Holmgren, D.; Hsu, L.; Loer, B.; Schmitt, R. [Fermi National Accelerator Laboratory, Batavia, Illinois 60510 (United States); Borgland, A.; Brandt, D.; Brink, P. L.; Do Couto E Silva, E.; Godfrey, G. L.; Hasi, J. [SLAC National Accelerator Laboratory/Kavli Institute for Particle Astrophysics and Cosmology, 2575 Sand Hill Road, Menlo Park, California 94025 (United States); Collaboration: The SuperCDMS Collaboration; and others

    2013-10-14

    The SuperCDMS experiment in the Soudan Underground Laboratory searches for dark matter with a 9-kg array of cryogenic germanium detectors. Symmetric sensors on opposite sides measure both charge and phonons from each particle interaction, providing excellent discrimination between electron and nuclear recoils, and between surface and interior events. Surface event rejection capabilities were tested with two {sup 210}Pb sources producing ∼130 beta decays/hr. In ∼800 live hours, no events leaked into the 8–115 keV signal region, giving upper limit leakage fraction 1.7 × 10{sup −5} at 90% C.L., corresponding to < 0.6 surface event background in the future 200-kg SuperCDMS SNOLAB experiment.

  19. Germanium Nanocrystals Embedded in Silicon Dioxide for Floating Gate Memory Devices

    Directory of Open Access Journals (Sweden)

    A. Bag

    2011-01-01

    Full Text Available Metal-oxide-semiconductor (MOS capacitors with tri-layer structure consisting of rf magnetron sputtered grown germanium (Ge nanocrystals (NCs and silicon dioxide (SiO2 layers sandwiched between thermally grown tunnel and sputtered grown cap oxide layers of SiO2 were fabricated on p-Si substrates. Plane view transmission electron micrographs revealed the formation of spherically shaped and uniformly distributed Ge NCs. The optical and electronic characteristics of tri-layer structures were studied through photoluminescence (PL spectroscopy and capacitance-voltage (C-V measurements, respectively. Frequency dependent electrical properties of the structures have been studied. The optical emission characteristics support the confinement of the carriers in Ge NCs embedded in oxide matrices. An anticlockwise hysteresis in C-V characteristics suggests electron injection and trapping in Ge NCs.

  20. Wetting Angle and Surface Tension of Germanium Melts on Different Substrate Materials

    Science.gov (United States)

    Kaiser, N.; Croell, A.; Szofran, F. R.; Benz, K. W.; Rose, M. Franklin (Technical Monitor)

    2001-01-01

    The sessile drop technique has been used to measure the wetting angle and the surface tension of molten germanium (Ge) on various substrate materials. Sapphire, fused silica, glassy carbon, graphite, SiC, carbon-based aerogel, pyrolytic boron nitride (pBN), AlN, Si3N4, and CVD diamond were used as substrate materials. In addition, the effects of different cleaning procedures and surface treatments on the wetting behavior were investigated. The highest wetting angles with values around 170 deg. were found for pBN substrates under active vacuum or with a slight overpressure of 5N Argon or forming gas (2% Hydrogen in 5N Argon). The measurement of the surface tension and its temperature dependence for Ge under a forming gas atmosphere resulted in gamma(T) = 591 - 0.077 (T-T(sub m).

  1. Size Dependent Pore Formation in Germanium Nanowires Undergoing Reversible Delithiation Observed by In Situ TEM

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Xiaotang; He, Yang; Mao, Scott X.; Wang, Chong-min; Korgel, Brian A.

    2016-12-22

    Germanium (Ge) nanowires coated with an amorphous silicon (Si) shell undergoing lithiation and delithiation were studied using in situ transmission electron microscopy (TEM). Delithiation creates pores in nanowires with diameters larger than ~25 nm, but not in smaller diameter nanowires. The formation of pores in Ge nanowires undergoing delithiation has been observed before in in situ TEM experiments, but there has been no indication that a critical diameter exists below which pores do not form. Pore formation occurs as a result of fast lithium diffusion compared to vacancy migration. We propose that a short diffusion path for vacancies to the nanowire surface plays a role in limiting pore formation even when lithium diffusion is fast.

  2. Measurement of 238U muonic x-rays with a germanium detector setup

    Energy Technology Data Exchange (ETDEWEB)

    Esch, Ernst I [Los Alamos National Laboratory; Jason, Andrew [Los Alamos National Laboratory; Miyadera, Haruo [Los Alamos National Laboratory; Hoteling, Nathan J [Los Alamos National Laboratory; Heffner, Robert H [Los Alamos National Laboratory; Adelmann, Andreas [PAUL SCHERRER INSTITUT; Stocki, Trevor [HEALTH CANADA; Mitchell, Lee [NAVAL RESEARCH LAB

    2009-01-01

    In the field of nuclear non-proliferation muon interactions with materials are of great interest. This paper describes an experiment conducted at the Paul Scherrer Institut (PSI) in Switzerland where a muon beam is stopped in a uranium target. The muons produce characteristic muonic x-rays. Muons will penetrate shielding easily and the produced characteristic x-rays can be used for positive isotope identification. Furthermore, the x-rays for uranium isotopes lie in the energy range of 6-7 MeV, which allows them to have an almost optimal mean free path in heavy shielding such as lead or steel. A measurement was conducted at PSI to prove the feasibility of detecting muonic x-rays from a large sample of depleted uranium (several kilograms) with a germanium detector. In this paper, the experimental setup and analysis of the measurement itself is presented.

  3. Kerr nonlinearity and multi-photon absorption in germanium at mid-infrared wavelengths

    Science.gov (United States)

    Sohn, B.-U.; Monmeyran, C.; Kimerling, L. C.; Agarwal, A. M.; Tan, D. T. H.

    2017-08-01

    Multiphoton absorption coefficients and nonlinear refractive indices of germanium in the near and mid-infrared (2-5 μm) are reported. The nonlinear coefficients are measured by open and closed aperture Z-scan with 150 fs pulses at a repetition rate of 1 kHz. The nonlinear refractive index of Ge has a peak value of 9.1 ×10-5cm2/GW at a wavelength of 3 μm. The effect of free electrons generated by multiphoton absorption is discussed by investigating the variation of multiphoton absorption coefficients at different input powers. Kramers-Kronig relations are also discussed with regard to the relationship between nonlinear refractive index and two photon absorption coefficient.

  4. Germanium-tin multiple quantum well on silicon avalanche photodiode for photodetection at two micron wavelength

    Science.gov (United States)

    Dong, Yuan; Wang, Wei; Lee, Shuh Ying; Lei, Dian; Gong, Xiao; Khai Loke, Wan; Yoon, Soon-Fatt; Liang, Gengchiau; Yeo, Yee-Chia

    2016-09-01

    We report the demonstration of a germanium-tin multiple quantum well (Ge0.9Sn0.1 MQW)-on-Si avalanche photodiode (APD) for light detection near the 2 μm wavelength range. The measured spectral response covers wavelengths from 1510 to 2003 nm. An optical responsivity of 0.33 A W-1 is achieved at 2003 nm due to the internal avalanche gain. In addition, a thermal coefficient of breakdown voltage is extracted to be 0.053% K-1 based on the temperature-dependent dark current measurement. As compared to the traditional 2 μm wavelength APDs, the Si-based APD is promising for its small excess noise factor, less stringent demand on temperature stability, and its compatibility with silicon technology.

  5. Analysis of proton single-particle properties of zinc and germanium isotopes

    Science.gov (United States)

    Bespalova, O. V.; Ermakova, T. A.; Klimochkina, A. A.; Romanovsky, E. A.; Spasskaya, T. I.

    2014-12-01

    Experimental proton single-particle energies in the vicinity of the Fermi energy for stable zinc and germanium isotopes are analyzed on the basis the dispersive optical model. The values found for the parameters of the dispersive optical potential are corrected with the aim of matching the total number of protons that is calculated with the aid of the function of Bardeen-Cooper-Schrieffer theory for the occupation probability for single-particle orbits with the charge number Z of the nucleus. The parameters of the dispersive optical potential are extrapolated on the basis of physically motivated arguments to the region of unstable isotopes in which the number N ranges between 34 and 50, and single-particle spectra are predicted by means of calculations with these parameters.

  6. Pulse shape analysis for segmented germanium detectors implemented in graphics processing units

    Energy Technology Data Exchange (ETDEWEB)

    Calore, Enrico, E-mail: enrico.calore@lnl.infn.it [INFN Laboratori Nazionali di Legnaro, Viale Dell' Università 2, I-35020 Legnaro, Padova (Italy); Bazzacco, Dino, E-mail: dino.bazzacco@pd.infn.it [INFN Sezione di Padova, Via Marzolo 8, I-35131 Padova (Italy); Recchia, Francesco, E-mail: francesco.recchia@pd.infn.it [INFN Sezione di Padova, Via Marzolo 8, I-35131 Padova (Italy); Dipartimento di Fisica e Astronomia dell' Università di Padova, Via Marzolo 8, I-35131 Padova (Italy)

    2013-08-11

    Position sensitive highly segmented germanium detectors constitute the state-of-the-art of the technology employed for γ-spectroscopy studies. The operation of large spectrometers composed of tens to hundreds of such detectors demands enormous amounts of computing power for the digital treatment of the signals. The use of Graphics Processing Units (GPUs) has been evaluated as a cost-effective solution to meet such requirements. Different implementations and the hardware constraints limiting the performance of the system are examined. -- Highlights: • We implemented the grid-search algorithm in OpenCL in order to be run on GPUs. • We compared its performances in respect to an optimized CPU implementation in C++. • We analyzed the results highlighting the most probable factors limiting their speed. • We propose some solutions to overcome their speed limits.

  7. Synthesis and characterization of nano/micro structured crystalline germanium dioxide with novel morphology

    Institute of Scientific and Technical Information of China (English)

    WANG XiaoYan; DUAN Lian; DONG GuiFang; WEI Peng; WANG Wei; WANG LiDuo; QIU Yong

    2009-01-01

    Nano/micro-structured germanium oxide (GeO2) was prepared using GeCl4 and KOH by a simple solution method in alkalic alcoholic solution.Different morphologies of GeO2 were obtained by changing the reaction conditions.The effects of the reaction time,the concentration of the reactants,the reaction temperature and the dispersant upon the morphology of the deposited GeO2 have been investigated.The products were detected by X-ray diffraction (XRD),atomic force microscope (AFM),scanning electron microscope (SEM) and transmission electron microscope (TEM).Novel cross-like structures were obtained by using n-butylamine as the dispersant.The formation of the cross-like structures has been discussed and a solution-liquid-solid (SLS) mechanism was proposed.

  8. Prospects of cold dark matter searches with an ultra-low-energy germanium detector

    CERN Document Server

    Wong, H T

    2007-01-01

    The report describes the research program on the development of ultra-low-energy germanium detectors, with emphasis on WIMP dark matter searches. A threshold of 100 eV is achieved with a 20 g detector array, providing a unique probe to the low-mas WIMP. Present data at a surface laboratory is expected to give rise to comparable sensitivities with the existing limits at the $\\rm{5 - 10 GeV}$ WIMP-mass range. The projected parameter space to be probed with a full-scale, kilogram mass-range experiment is presented. Such a detector would also allow the studies of neutrino-nucleus coherent scattering and neutrino magnetic moments.

  9. Strained silicon/silicon germanium heterojunction n-channel metal oxide semiconductor field effect transistors

    CERN Document Server

    Olsen, S H

    2002-01-01

    Investigations into the performance of strained silicon/silicon-germanium (Si/SiGe) n-channel metal-oxide-semiconductor field effect transistors (MOSFETs) have been carried out. Theoretical predictions suggest that use of a strained Si/SiGe material system with advanced material properties compared with conventional silicon allows enhanced MOSFET device performance. This study has therefore investigated the practical feasibility of obtaining superior electrical performance using a Si/SiGe material system. The MOSFET devices consisted of a strained Si surface channel and were fabricated on relaxed SiGe material using a reduced thermal budget process in order to preserve the strain. Two batches of strained Si/SiGe devices fabricated on material grown by differing methods have been analysed and both showed good transistor action. A correlation of electrical and physical device data established that the electrical device behaviour was closely related to the SiGe material quality, which differed depending on growt...

  10. The isotope composition of inorganic germanium in seawater and deep sea sponges

    Science.gov (United States)

    Guillermic, Maxence; Lalonde, Stefan V.; Hendry, Katharine R.; Rouxel, Olivier J.

    2017-09-01

    Although dissolved concentrations of germanium (Ge) and silicon (Si) in modern seawater are tightly correlated, uncertainties still exist in the modern marine Ge cycle. Germanium stable isotope systematics in marine systems should provide additional constraints on marine Ge sources and sinks, however the low concentration of Ge in seawater presents an analytical challenge for isotopic measurement. Here, we present a new method of pre-concentration of inorganic Ge from seawater which was applied to measure three Ge isotope profiles in the Southern Ocean and deep seawater from the Atlantic and Pacific Oceans. Germanium isotopic measurements were performed on Ge amounts as low as 2.6 ng using a double-spike approach and a hydride generation system coupled to a MC-ICP-MS. Germanium was co-precipitated with iron hydroxide and then purified through anion-exchange chromatography. Results for the deep (i.e. >1000 m depth) Pacific Ocean off Hawaii (nearby Loihi Seamount) and the deep Atlantic off Bermuda (BATS station) showed nearly identical δ74/70Ge values at 3.19 ± 0.31‰ (2SD, n = 9) and 2.93 ± 0.10‰ (2SD, n = 2), respectively. Vertical distributions of Ge concentration and isotope composition in the deep Southern Ocean for water depth > 1300 m yielded an average δ74/70Ge = 3.13 ± 0.25‰ (2SD, n = 14) and Ge/Si = 0.80 ± 0.09 μmol/mol (2SD, n = 12). Significant variations in δ74/70Ge, from 2.62 to 3.71‰, were measured in the first 1000 m in one station of the Southern Ocean near Sars Seamount in the Drake Passage, with the heaviest values measured in surface waters. Isotope fractionation by diatoms during opal biomineralization may explain the enrichment in heavy isotopes for both Ge and Si in surface seawater. However, examination of both oceanographic parameters and δ74/70Ge values suggest also that water mass mixing and potential contribution of shelf-derived Ge also could contribute to the variations. Combining these results with new Ge isotope data

  11. Demonstration of Surface Electron Rejection with Interleaved Germanium Detectors for Dark Matter Searches

    Energy Technology Data Exchange (ETDEWEB)

    Agnese, R.; Anderson, A. J.; Balakishiyeva, D.; Basu Thakur, R.; Bauer, D. A.; Borgland, A.; Brandt, D.; Brink, P. L.; Bunker, R.; Cabrera, B.; Caldwell, D. O.; Cerdeno, D. G.; Chagani, H.; Cherry, M.; Cooley, J.; Cornell, B.; Crewdson, C. H.; Cushman, Priscilla B.; Daal, M.; Di Stefano, P. C.; Do Couto E Silva, E.; Doughty, T.; Esteban, L.; Fallows, S.; Figueroa-Feliciano, E.; Fox, J.; Fritts, M.; Godfrey, G. L.; Golwala, S. R.; Hall, Jeter C.; Harris, H. R.; Hasi, J.; Hertel, S. A.; Hines, B. A.; Hofer, T.; Holmgren, D.; Hsu, L.; Huber, M. E.; Jastram, A.; Kamaev, O.; Kara, B.; Kelsey, M. H.; Kenany, S.; Kennedy, A.; Kenney, C. J.; Kiveni, M.; Koch, K.; Loer, B.; Lopez Asamar, E.; Mahapatra, R.; Mandic, V.; Martinez, C.; McCarthy, K. A.; Mirabolfathi, N.; Moffatt, R. A.; Moore, D. C.; Nadeau, P.; Nelson, R. H.; Novak, L.; Page, K.; Partridge, R.; Pepin, M.; Phipps, A.; Prasad, K.; Pyle, M.; Qiu, H.; Radpour, R.; Rau, W.; Redl, P.; Reisetter, A.; Resch, R. W.; Ricci, Y.; Saab, T.; Sadoulet, B.; Sander, J.; Schmitt, R.; Schneck, K.; Schnee, Richard; Scorza, S.; Seitz, D.; Serfass, B.; Shank, B.; Speller, D.; Tomada, A.; Villano, A. N.; Welliver, B.; Wright, D. H.; Yellin, S.; Yen, J. J.; Young, B. A.; Zhang, J.

    2013-10-17

    The SuperCDMS experiment in the Soudan Underground Laboratory searches for dark matter with a 9-kg array of cryogenic germanium detectors. Symmetric sensors on opposite sides measure both charge and phonons from each particle interaction, providing excellent discrimination between electron and nuclear recoils, and between surface and interior events. Furthermore, surface event rejection capabilities were tested with two 210Pb sources producing ~130 beta decays/hr. We found that in ~800 live hours, no events leaked into the 8–115 keV signal region, giving upper limit leakage fraction 1.7 x 10-5 at 90% C.L., corresponding to<0.6 surface event background in the future 200-kg SuperCDMS SNOLAB experiment.

  12. Radiation electromagnetic effect in germanium crystals under high-energy. cap alpha. -particle irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Kikoin, I.K.; Babichenko, V.S.; Kikoin, L.I.; Lazarev, S.D.; Rzhanov, A.E.; Filippov, V.I.

    1984-05-01

    Results of experimental investigation into radiation electromagnetic effect (REM) in samples of germanium crystals under approximately 40 MeV ..cap alpha..-particle irradiation in a cyclotron are presented. A high level of excitation, volumetric character of generation of non-equilibrium carriers and formation of defects as well as the form of their spatial distribution are shown to result in some peculiarities of the EMF of the REM effect on the particle flux, fluence and sample parameters. Agreement of theoretical calculations, conducted with account of specificity of ..cap alpha..-particle interaction with a crystal, and experimental data is obtained. It is revealed that the REM effect can be applied in obtaining data on spatial distribution of non-equilibrium carrier concentrations along the particle trajectory in the crystal.

  13. Radiation-electromagnetic effect in germanium crystals irradiated with high-energy. cap alpha. particles

    Energy Technology Data Exchange (ETDEWEB)

    Kikoin, I.K.; Babichenko, V.S.; Kikoin, L.I.; Lazarev, S.D.; Rzhanov, A.E.; Filippov, V.I.

    1984-05-01

    An experimental investigation was made of the radiation-electromagnetic effect in germanium crystals irradiated in a cyclotron with ..cap alpha.. particles of energies up to 40 MeV. The high excitation rate, the bulk nature of generation of nonequilibrium carriers and defects, and their spatial distributions gave rise to several special features in the dependence of the emf due to the radiation-electromagnetic effect on the particle flux, fluence, and parameters of samples. Theoretical calculations carried out allowing for the specific nature of the interaction of ..cap alpha.. particles with crystals agreed well with the experimental results. The radiation-electromagnetic effect could be used to obtain information on the nature of the spatial distribution of the density of nonequilibrium carriers along the trajectory of a particle in a crystal.

  14. THE PATHOGENESIS OF EXPERIMENTAL MODEL OF MITOCHONDRIAL MYOPATHY INDUCED BY GERMANIUM DIOXIDE

    Institute of Scientific and Technical Information of China (English)

    李晓东; 高枫; 陈清棠

    2001-01-01

    Objective. The purpose of the study was to build up an animal model of mitochondrial myopathy in order to analyse the pathogenesis of the disease.Methods. The skeletal muscles from Wistar rats treated with germanium dioxide for 24 weeks were analysed by histopathologic and electron-microscopic studies. A quantitative analysis was carried out in mitochondrial DNAs of these samples. The biological function of the model was determined.``Results. An animal model of mitochondrial myopathy was built up, in which oxygen free radicals were increased and mitochondrial DNA copies were decreased contrasted with controls.``Conclusion. It suggested that environmental toxin may play a role in the pathogenesis of mitochondrial myopathy. The increase of oxygen free radicals is an important link causing the disease.

  15. THE PATHOGENESIS OF EXPERIMENTAL MODEL OF MITOCHONDRIAL MYOPATHY INDUCED BY GERMANIUM DIOXIDE

    Institute of Scientific and Technical Information of China (English)

    李晓东; 高枫; 陈清棠

    2001-01-01

    Objective. The purpose of the study was to build up an animal model of mitochondrial myopathy in order to analyse the pathogenesis of the disease. Methods. The skeletal muscles from Wistar rats treated with germanium dioxide for 24 weeks were analysed by histopathologic and electron-microscopic studies. A quantitative analysis was carried out in mitochondrial DNAs of these samples. The biological function of the model was determined. Results. An animal model of mitochondrial myopathy was built up, in which oxygen free radicals were increased and mitochondrial DNA copies were decreased contrasted with controls. Conclusion. It suggested that environmental toxin may play a role in the pathogenesis of mitochondrial myopathy. The increase of oxygen free radicals is an important link causing the disease.

  16. Bulk and Surface Event Identification in p-type Germanium Detectors

    CERN Document Server

    Yang, L T; Jia, L P; Jiang, H; Li, J; Lin, F K; Lin, S T; Liu, S K; Ma, J L; Sharma, V; Singh, L; Singh, M K; Soma, A K; Yang, S W; Wang, L; Wang, Q; Wong, H T; Yue, Q; Zhao, W

    2016-01-01

    The p-type point-contact germanium detectors, due to its sub-keV sensitivities and low internal radioactivity background, are demonstrated to be competitive tools for light dark matter WIMPs searches and may have potential applications in neutrino physics. These detectors exhibit anomalous surface behavior, which has been characterized and dealt with in previous analysis. However, the analysis method rely on spectral shape assumptions and must use external calibration sources. In this report, we purpose an improved method, where in situ data could be used as calibration sources. Data from CDEX-1 and TEXONO experiments will be re-examined and the results are shown to be consistent with both analysis.

  17. Influence of silicon dangling bonds on germanium thermal diffusion within SiO{sub 2} glass

    Energy Technology Data Exchange (ETDEWEB)

    Barba, D.; Martin, F.; Ross, G. G. [INRS Centre for Energy, Materials and Telecommunications, 1650 Boul. Lionel-Boulet, Varennes, Québec J3X 1S2 (Canada); Cai, R. S.; Wang, Y. Q. [The Cultivation Base for State Key Laboratory, Qingdao University, Qingdao 266071 (China); Demarche, J.; Terwagne, G. [LARN, Centre de Recherche en Physique de la Matière et du Rayonnement (PMR), University of Namur (FUNDP), B-5000 Namur (Belgium); Rosei, F. [INRS Centre for Energy, Materials and Telecommunications, 1650 Boul. Lionel-Boulet, Varennes, Québec J3X 1S2 (Canada); Center for Self-Assembled Chemical Structures, McGill University, Montreal, Quebec H3A 2K6 (Canada)

    2014-03-17

    We study the influence of silicon dangling bonds on germanium thermal diffusion within silicon oxide and fused silica substrates heated to high temperatures. By using scanning electron microscopy and Rutherford backscattering spectroscopy, we determine that the lower mobility of Ge found within SiO{sub 2}/Si films can be associated with the presence of unsaturated SiO{sub x} chemical bonds. Comparative measurements obtained by x-ray photoelectron spectroscopy show that 10% of silicon dangling bonds can reduce Ge desorption by 80%. Thus, the decrease of the silicon oxidation state yields a greater thermal stability of Ge inside SiO{sub 2} glass, which could enable to considerably extend the performance of Ge-based devices above 1300 K.

  18. Measurement of the cosmogenic activation of germanium detectors in EDELWEISS-III

    CERN Document Server

    Armengaud, E; Augier, C; Benoît, A; Bergé, L; Billard, J; Blümer, J; de Boissière, T; Broniatowski, A; Camus, P; Cazes, A; Chapellier, M; Charlieux, F; De Jésus, M; Dumoulin, L; Eitel, K; Foerster, N; Gascon, J; Giuliani, A; Gros, M; Hehn, L; Heuermann, G; Jin, Y; Juillard, A; Kéfélian, C; Kleifges, M; Kozlov, V; Kraus, H; Kudryavtsev, V A; Le-Sueur, H; Marnieros, S; Navick, X -F; Nones, C; Olivieri, E; Pari, P; Paul, B; Piro, M -C; Poda, D; Queguiner, E; Rozov, S; Sanglard, V; Schmidt, B; Scorza, S; Siebenborn, B; Tcherniakhovski, D; Vagneron, L; Weber, M; Yakushev, E

    2016-01-01

    We present a measurement of the cosmogenic activation in the germanium cryogenic detectors of the EDELWEISS III direct dark matter search experiment. The decay rates measured in detectors with different exposures to cosmic rays above ground are converted into production rates of different isotopes. The measured production rates in units of nuclei/kg/day are 82 $\\pm$ 21 for $^3$H, 2.8 $\\pm$ 0.6 for $^{49}$V, 4.6 $\\pm$ 0.7 for $^{55}$Fe, and 106 $\\pm$ 13 for $^{65}$Zn. These results are the most accurate for these isotopes. A lower limit on the production rate of $^{68}$Ge of 74 nuclei/kg/day is also presented. They are compared to model predictions present in literature and to estimates calculated with the ACTIVIA code.

  19. Tin and germanium monochalcogenide IV-VI semiconductor nanocrystals for use in solar cells.

    Science.gov (United States)

    Antunez, Priscilla D; Buckley, Jannise J; Brutchey, Richard L

    2011-06-01

    The incorporation of colloidal semiconductor nanocrystals into the photoabsorbant material of photovoltaic devices may reduce the production costs of solar cells since nanocrystals can be readily synthesized on a large scale and are solution processable. While the lead chalcogenide IV-VI nanocrystals have been widely studied in a variety of photovoltaic devices, concerns over the toxicity of lead have motivated the exploration of less toxic materials. This has led to the exploration of tin and germanium monochalcogenide IV-VI semiconductors, both of which are made up of earth abundant elements and possess properties similar to the lead chalcogenides. This feature article highlights recent efforts made towards achieving synthetic control over nanocrystal size and morphology of the non-lead containing IV-VI monochalcogenides (i.e., SnS, SnSe, SnTe, GeS and GeSe) and their application toward photovoltaic devices.

  20. The impact of neutral impurity concentration on charge drift mobility in germanium

    CERN Document Server

    Mei, H; Wang, G -J; Yang, G

    2016-01-01

    We report a new result of the neutral impurity scattering of electrons and holes that has impact on the charge drift mobility in high purity germanium crystals at 77 Kelvin. The charge carrier concentration, mobility and resistivity are measured by Hall Effect system at 77 Kelvin. We investigated the contribution to the total charge drift mobility from ionized impurity scattering, lattice scattering, and neutral impurity scattering with the best theoretical models and experimental data. Several samples with measured Hall mobility from the grown crystals are used for this investigation. With the measured Hall mobility and ionized impurity concentration as well as the theoretical models, we calculated the neutral impurity concentration by the Matthiessen's rule. As a result, the distributions of the neutral impurity concentrations with respect to the radius of the crystals are obtained. Consequently, we demonstrate that neutral impurity scattering is a significant contribution to the charge drift mobility, whic...