A Low-Noise Direct Incremental A/D Converter for FET-Based THz Imaging Detectors

Directory of Open Access Journals (Sweden)

Moustafa Khatib

2018-06-01

Full Text Available This paper presents the design, implementation and characterization results of a pixel-level readout chain integrated with a FET-based terahertz (THz detector for imaging applications. The readout chain is fabricated in a standard 150-nm CMOS technology and contains a cascade of a preamplification and noise reduction stage based on a parametric chopper amplifier and a direct analog-to-digital conversion by means of an incremental ΣΔ converter, performing a lock-in operation with modulated sources. The FET detector is integrated with an on-chip antenna operating in the frequency range of 325–375 GHz and compliant with all process design rules. The cascade of the FET THz detector and readout chain is evaluated in terms of responsivity and Noise Equivalent Power (NEP measurements. The measured readout input-referred noise of 1.6 μ V r m s allows preserving the FET detector sensitivity by achieving a minimum NEP of 376 pW/ Hz in the optimum bias condition, while directly providing a digital output. The integrated readout chain features 65-dB peak-SNR and 80-μ W power consumption from a 1.8-V supply. The area of the antenna-coupled FET detector and the readout chain fits a pixel pitch of 455 μm, which is suitable for pixel array implementation. The proposed THz pixel has been successfully applied for imaging of concealed objects in a paper envelope under continuous-wave illumination.

Design and Simulation of Nano Wire FET

Directory of Open Access Journals (Sweden)

M. Anil Kumar

2017-06-01

Full Text Available As the era of classical planar metal-oxide-semiconductor field-effect transistors (MOSFETs comes to an end, the semiconductor industry is beginning to adopt 3D device architectures, such as FinFETs, starting at the 22 nm technology node. Since physical limits such as short channel effect (SCE and self-heating may dominate, it may be difficult to scale Si FinFET below 10 nm. In this regard, transistors with different materials, geometries, or operating principles may help. For example, gate has excellent electrostatic control over 2D thin film channel with planar geometry and 1D nanowire (NW channel with gate-all-around (GAA geometry to reduce SCE. High carrier mobility of single wall carbon nanotube (SWNT or III-V channels may reduce VDD to reduce power consumption. Therefore, as channel of transistor, 2D thin film of array SWNTs and 1D III-V multi NWs are promising for sub 10 nm technology nodes. To simulate these devices, accurate modelling and design based on gate-material are necessary to assess their performance limits, since cross-sections of the multi-gate NWFETs are expected to be a few nano-meters wide in their ultimate scaling. In this paper we have explored the use of SILVACO with different materials for simulating and studying the short channel behaviour of nanowire FETs.

3D modeling of dual-gate FinFET.

Science.gov (United States)

Mil'shtein, Samson; Devarakonda, Lalitha; Zanchi, Brian; Palma, John

2012-11-13

The tendency to have better control of the flow of electrons in a channel of field-effect transistors (FETs) did lead to the design of two gates in junction field-effect transistors, field plates in a variety of metal semiconductor field-effect transistors and high electron mobility transistors, and finally a gate wrapping around three sides of a narrow fin-shaped channel in a FinFET. With the enhanced control, performance trends of all FETs are still challenged by carrier mobility dependence on the strengths of the electrical field along the channel. However, in cases when the ratio of FinFET volume to its surface dramatically decreases, one should carefully consider the surface boundary conditions of the device. Moreover, the inherent non-planar nature of a FinFET demands 3D modeling for accurate analysis of the device performance. Using the Silvaco modeling tool with quantization effects, we modeled a physical FinFET described in the work of Hisamoto et al. (IEEE Tran. Elec. Devices 47:12, 2000) in 3D. We compared it with a 2D model of the same device. We demonstrated that 3D modeling produces more accurate results. As 3D modeling results came close to experimental measurements, we made the next step of the study by designing a dual-gate FinFET biased at Vg1 >Vg2. It is shown that the dual-gate FinFET carries higher transconductance than the single-gate device.

Ionic screening effect on low-frequency drain current fluctuations in liquid-gated nanowire FETs

International Nuclear Information System (INIS)

Lu, Ming-Pei; Vire, Eric; Montès, Laurent

2015-01-01

The ionic screening effect plays an important role in determining the fundamental surface properties within liquid–semiconductor interfaces. In this study, we investigated the characteristics of low-frequency drain current noise in liquid-gated nanowire (NW) field effect transistors (FETs) to obtain physical insight into the effect of ionic screening on low-frequency current fluctuation. When the NW FET was operated close to the gate voltage corresponding to the maximum transconductance, the magnitude of the low-frequency noise for the NW exposed to a low-ionic-strength buffer (0.001 M) was approximately 70% greater than that when exposed to a high-ionic-strength buffer (0.1 M). We propose a noise model, considering the charge coupling efficiency associated with the screening competition between the electrolyte buffer and the NW, to describe the ionic screening effect on the low-frequency drain current noise in liquid-gated NW FET systems. This report not only provides a physical understanding of the ionic screening effect behind the low-frequency current noise in liquid-gated FETs but also offers useful information for developing the technology of NW FETs with liquid-gated architectures for application in bioelectronics, nanosensors, and hybrid nanoelectronics. (paper)

High-performance silicon nanotube tunneling FET for ultralow-power logic applications

KAUST Repository

Fahad, Hossain M.

2013-03-01

To increase typically low output drive currents from tunnel field-effect transistors (FETs), we show a silicon vertical nanotube (NT) architecture-based FET\\'s effectiveness. Using core (inner) and shell (outer) gate stacks, the silicon NT tunneling FET shows a sub-60 mV/dec subthreshold slope, ultralow off -state leakage current, higher drive current compared with gate-all-around nanowire silicon tunnel FETs. © 1963-2012 IEEE.

High performance flexible CMOS SOI FinFETs

KAUST Repository

Fahad, Hossain M.; Sevilla, Galo T.; Ghoneim, Mohamed T.; Hussain, Muhammad Mustafa

2014-01-01

We demonstrate the first ever CMOS compatible soft etch back based high performance flexible CMOS SOI FinFETs. The move from planar to non-planar FinFETs has enabled continued scaling down to the 14 nm technology node. This has been possible due

FinFET and UTBB for RF SOI communication systems

Science.gov (United States)

Raskin, Jean-Pierre

2016-11-01

Performance of RF integrated circuit (IC) is directly linked to the analog and high frequency characteristics of the transistors, the quality of the back-end of line process as well as the electromagnetic properties of the substrate. Thanks to the introduction of the trap-rich high-resistivity Silicon-on-Insulator (SOI) substrate on the market, the ICs requirements in term of linearity are fulfilled. Today partially depleted SOI MOSFET is the mainstream technology for RF SOI systems. Future generations of mobile communication systems will require transistors with better high frequency performance at lower power consumption. The advanced MOS transistors in competition are FinFET and Ultra Thin Body and Buried oxide (UTBB) SOI MOSFETs. Both devices have been intensively studied these last years. Most of the reported data concern their digital performance. In this paper, their analog/RF behavior is described and compared. Both show similar characteristics in terms of transconductance, Early voltage, voltage gain, self-heating issue but UTBB outperforms FinFET in terms of cutoff frequencies thanks to their relatively lower fringing parasitic capacitances.

Diode, transistor & fet circuits manual

CERN Document Server

Marston, R M

2013-01-01

Diode, Transistor and FET Circuits Manual is a handbook of circuits based on discrete semiconductor components such as diodes, transistors, and FETS. The book also includes diagrams and practical circuits. The book describes basic and special diode characteristics, heat wave-rectifier circuits, transformers, filter capacitors, and rectifier ratings. The text also presents practical applications of associated devices, for example, zeners, varicaps, photodiodes, or LEDs, as well as it describes bipolar transistor characteristics. The transistor can be used in three basic amplifier configuration

Detection principles of biological and chemical FET sensors.

Science.gov (United States)

Kaisti, Matti

2017-12-15

The seminal importance of detecting ions and molecules for point-of-care tests has driven the search for more sensitive, specific, and robust sensors. Electronic detection holds promise for future miniaturized in-situ applications and can be integrated into existing electronic manufacturing processes and technology. The resulting small devices will be inherently well suited for multiplexed and parallel detection. In this review, different field-effect transistor (FET) structures and detection principles are discussed, including label-free and indirect detection mechanisms. The fundamental detection principle governing every potentiometric sensor is introduced, and different state-of-the-art FET sensor structures are reviewed. This is followed by an analysis of electrolyte interfaces and their influence on sensor operation. Finally, the fundamentals of different detection mechanisms are reviewed and some detection schemes are discussed. In the conclusion, current commercial efforts are briefly considered. Copyright © 2017 The Authors. Published by Elsevier B.V. All rights reserved.

Taste sensing FET (TSFET)

Energy Technology Data Exchange (ETDEWEB)

Toko, K.; Yasuda, R.; Ezaki, S. [Kyushu University, Fukuoka (Japan); Fujiyoshi, T. [Kumamoto University, Kumamoto (Japan). Faculty of Engineering

1997-12-20

Taste can be quantified using a multichannel taste sensor with lipid/polymer membranes. Its sensitivity and stability are superior to those of humans. A present study is concerned with the first step of miniaturization and integration of the taste sensor with lipid/polymer membranes using FET. As a result, it was found that gate-source voltage of the taste sensing FET showed the same behaviors as the conventional taste sensor utilizing the membrane-potential change due to five kinds of taste substances. Discrimination of foodstuffs was very easy. A thin lipid membrane formed using LB technique was also tried. These results will open doors to fabrication of a miniaturized, integrated taste sensing system. 12 refs., 6 figs.

A comparative analysis between FinFET Semi-Dynamic Flip-Flop topologies under process variations

KAUST Repository

Rabie, Mohamed A.; Bahgat, Ahmed B G; Ramadan, Khaled S.; Shobak, Hosam; Nasr, Tarek Adel Hosny; Abdelhafez, Mohamed R.; Moustafa, Eslam M.; Anis, Mohab H.

2011-01-01

Semi-Dynamic Flip-Flops are widely used in state-of-art microprocessors. Moreover, scaling down traditional CMOS technology faces major challenges which rises the need for new devices for replacement. FinFET technology is a potential replacement due to similarity in both fabrication process and theory of operation to current CMOS technology. Hence, this paper presents the study of Semi Dynamic Flip Flops using both Independent gate and Tied gate FinFET devices in 32nm technology node. Furthermore, it studies the performance of these new circuits under process variations. © 2011 IEEE.

A comparative analysis between FinFET Semi-Dynamic Flip-Flop topologies under process variations

KAUST Repository

Rabie, Mohamed A.

2011-11-01

Semi-Dynamic Flip-Flops are widely used in state-of-art microprocessors. Moreover, scaling down traditional CMOS technology faces major challenges which rises the need for new devices for replacement. FinFET technology is a potential replacement due to similarity in both fabrication process and theory of operation to current CMOS technology. Hence, this paper presents the study of Semi Dynamic Flip Flops using both Independent gate and Tied gate FinFET devices in 32nm technology node. Furthermore, it studies the performance of these new circuits under process variations. © 2011 IEEE.

Operation of a New Half-Bridge Gate Driver for Enhancement - Mode GaN FETs, Type LM5113, Over a Wide Temperature Range

Science.gov (United States)

Patterson, Richard; Hammoud, Ahmad

2011-01-01

A new commercial-off-the-shelf (COTS) gate driver designed to drive both the high-side and the low-side enhancement-mode GaN FETs, National Semiconductor's type LM5113, was evaluated for operation at temperatures beyond its recommended specified limits of -40 C to +125 C. The effects of limited thermal cycling under the extended test temperature, which ranged from -194 C to +150 C, on the operation of this chip as well as restart capability at the extreme cryogenic and hot temperatures were also investigated. The driver circuit was able to maintain good operation throughout the entire test regime between -194 C and +150 C without undergoing any major changes in its outputs signals and characteristics. The limited thermal cycling performed on the device also had no effect on its performance, and the driver chip was able to successfully restart at each of the extreme temperatures of -194 C and +150 C. The plastic packaging of this device was also not affected by either the short extreme temperature exposure or the limited thermal cycling. These preliminary results indicate that this new commercial-off-the-shelf (COTS) halfbridge eGaN FET driver integrated circuit has the potential for use in space exploration missions under extreme temperature environments. Further testing is planned under long-term cycling to assess the reliability of these parts and to determine their suitability for extended use in the harsh environments of space.

High-performance silicon nanotube tunneling FET for ultralow-power logic applications

KAUST Repository

Fahad, Hossain M.; Hussain, Muhammad Mustafa

2013-01-01

To increase typically low output drive currents from tunnel field-effect transistors (FETs), we show a silicon vertical nanotube (NT) architecture-based FET's effectiveness. Using core (inner) and shell (outer) gate stacks, the silicon NT tunneling FET shows a sub-60 mV/dec subthreshold slope, ultralow off -state leakage current, higher drive current compared with gate-all-around nanowire silicon tunnel FETs. © 1963-2012 IEEE.

Radiosynthesis of [18F]FEt-Tyr-urea-Glu ([18F]FEtTUG) as a new PSMA ligand

International Nuclear Information System (INIS)

Al-Momani, E.; Malik, N.; Machulla, H.J.; Reske, S.N.; Solbach, C.

2013-01-01

An efficient radiosynthesis of [ 18 F]FEt-Tyr-urea-Glu ([ 18 F]FEtTUG) as a new ligand for prostate specific membrane antigen (PSMA) was developed by use of [ 18 F]fluoroethyltosylate as labeling precursor. The corresponding fluoroethyl-tyrosine-urea-glutamate peptide was prepared as reference standard for HPLC control and identified and characterized by standard procedures (MS, NMR). The labeling conditions were optimized with respect to reaction time, reaction temperature, base and solvent. The maximal radiochemical yield of [ 18 F]FEtTUG (77 ± 0.8 %) was obtained within a reaction time of 15 min at a reaction temperature of 80 deg C using 10 M NaOH (18 equiv. related to precursor) in 80 % aqueous acetonitrile. The total preparation time including radiosynthesis, hydrolysis, HPLC purification and formulation was 70 min (EOB). The radiochemical purity was ≥98 %. (author)

G(sup 4)FET Implementations of Some Logic Circuits

Science.gov (United States)

Mojarradi, Mohammad; Akarvardar, Kerem; Cristoleveanu, Sorin; Gentil, Paul; Blalock, Benjamin; Chen, Suhan

2009-01-01

Some logic circuits have been built and demonstrated to work substantially as intended, all as part of a continuing effort to exploit the high degrees of design flexibility and functionality of the electronic devices known as G(sup 4)FETs and described below. These logic circuits are intended to serve as prototypes of more complex advanced programmable-logicdevice-type integrated circuits, including field-programmable gate arrays (FPGAs). In comparison with prior FPGAs, these advanced FPGAs could be much more efficient because the functionality of G(sup 4)FETs is such that fewer discrete components are needed to perform a given logic function in G(sup 4)FET circuitry than are needed perform the same logic function in conventional transistor-based circuitry. The underlying concept of using G(sup 4)FETs as building blocks of programmable logic circuitry was also described, from a different perspective, in G(sup 4)FETs as Universal and Programmable Logic Gates (NPO-41698), NASA Tech Briefs, Vol. 31, No. 7 (July 2007), page 44. A G(sup 4)FET can be characterized as an accumulation-mode silicon-on-insulator (SOI) metal oxide/semiconductor field-effect transistor (MOSFET) featuring two junction field-effect transistor (JFET) gates. The structure of a G(sup 4)FET (see Figure 1) is the same as that of a p-channel inversion-mode SOI MOSFET with two body contacts on each side of the channel. The top gate (G1), the substrate emulating a back gate (G2), and the junction gates (JG1 and JG2) can be biased independently of each other and, hence, each can be used to independently control some aspects of the conduction characteristics of the transistor. The independence of the actions of the four gates is what affords the enhanced functionality and design flexibility of G(sup 4)FETs. The present G(sup 4)FET logic circuits include an adjustable-threshold inverter, a real-time-reconfigurable logic gate, and a dynamic random-access memory (DRAM) cell (see Figure 2). The configuration

Evaluation of factors influencing 18F-FET uptake in the brain

Directory of Open Access Journals (Sweden)

Antoine Verger

2018-01-01

Full Text Available PET using the amino-acid O-(2-18F-fluoroethyl-l-tyrosine (18F-FET is gaining increasing interest for brain tumour management. Semi-quantitative analysis of tracer uptake in brain tumours is based on the standardized uptake value (SUV and the tumour-to-brain ratio (TBR. The aim of this study was to explore physiological factors that might influence the relationship of SUV of 18F-FET uptake in various brain areas, and thus affect quantification of 18F-FET uptake in brain tumours. Negative 18F-FET PET scans of 107 subjects, showing an inconspicuous brain distribution of 18F-FET, were evaluated retrospectively. Whole-brain quantitative analysis with Statistical Parametric Mapping (SPM using parametric SUV PET images, and volumes of interest (VOIs analysis with fronto-parietal, temporal, occipital, and cerebellar SUV background areas were performed to study the effect of age, gender, height, weight, injected activity, body mass index (BMI, and body surface area (BSA. After multivariate analysis, female gender and high BMI were found to be two independent factors associated with increased SUV of 18F-FET uptake in the brain. In women, SUVmean of 18F-FET uptake in the brain was 23% higher than in men (p < 0.01. SUVmean of 18F-FET uptake in the brain was positively correlated with BMI (r = 0.29; p < 0.01. The influence of these factors on SUV of 18F-FET was similar in all brain areas. In conclusion, SUV of 18F-FET in the normal brain is influenced by gender and weakly by BMI, but changes are similar in all brain areas.

Linear operator inequalities for strongly stable weakly regular linear systems

NARCIS (Netherlands)

Curtain, RF

2001-01-01

We consider the question of the existence of solutions to certain linear operator inequalities (Lur'e equations) for strongly stable, weakly regular linear systems with generating operators A, B, C, 0. These operator inequalities are related to the spectral factorization of an associated Popov

Investigation of thermal effects on FinFETs in the quasi-ballistic regime

Science.gov (United States)

Yin, Longxiang; Shen, Lei; Di, Shaoyan; Du, Gang; Liu, Xiaoyan

2018-04-01

In this work, the thermal effects of FinFETs in the quasi-ballistic regime are investigated using the Monte Carlo method. Bulk Si nFinFETs with the same fin structure and two different gate lengths L g = 20 and 80 nm are investigated and compared to evaluate the thermal effects on the performance of FinFETs in the quasi-ballistic regime. The on current of the 20 nm FinFET with V gs = 0.7 V does not decrease with increasing lattice temperature (T L) at a high V ds. The electrostatic properties in the 20 nm FinFET are more affected by T L than those in the 80 nm FinFET. However, the electron transport in the 20 nm FinFET is less affected by T L than that in the 80 nm FinFET. The electrostatic properties being more sensitive and the electron transport being less sensitive to thermal effects in the quasi-ballistic regime than in the diffusive regime should be considered for effective device modeling and design.

Comparison of 18F-FET PET and perfusion-weighted MRI for glioma grading. A hybrid PET/MR study

International Nuclear Information System (INIS)

Verger, Antoine; Filss, Christian P.; Lohmann, Philipp; Stoffels, Gabriele; Rota Kops, Elena; Sabel, Michael; Wittsack, Hans J.; Galldiks, Norbert; Fink, Gereon R.; Shah, Nadim J.; Langen, Karl-Josef

2017-01-01

Both perfusion-weighted MR imaging (PWI) and O-(2- 18 F-fluoroethyl)-L-tyrosine PET ( 18 F-FET) provide grading information in cerebral gliomas. The aim of this study was to compare the diagnostic value of 18 F-FET PET and PWI for tumor grading in a series of patients with newly diagnosed, untreated gliomas using an integrated PET/MR scanner. Seventy-two patients with untreated gliomas [22 low-grade gliomas (LGG), and 50 high-grade gliomas (HGG)] were investigated with 18 F-FET PET and PWI using a hybrid PET/MR scanner. After visual inspection of PET and PWI maps (rCBV, rCBF, MTT), volumes of interest (VOIs) with a diameter of 16 mm were centered upon the maximum of abnormality in the tumor area in each modality and the contralateral unaffected hemisphere. Mean and maximum tumor-to-brain ratios (TBR mean , TBR max ) were calculated. In addition, Time-to-Peak (TTP) and slopes of time-activity curves were calculated for 18 F-FET PET. Diagnostic accuracies of 18 F-FET PET and PWI for differentiating low-grade glioma (LGG) from high-grade glioma (HGG) were evaluated by receiver operating characteristic analyses (area under the curve; AUC). The diagnostic accuracy of 18 F-FET PET and PWI to discriminate LGG from HGG was similar with highest AUC values for TBR mean and TBR max of 18 F-FET PET uptake (0.80, 0.83) and for TBR mean and TBR max of rCBV (0.80, 0.81). In case of increased signal in the tumor area with both methods (n = 32), local hot-spots were incongruent in 25 patients (78%) with a mean distance of 10.6 ± 9.5 mm. Dynamic FET PET and combination of different parameters did not further improve diagnostic accuracy. Both 18 F-FET PET and PWI discriminate LGG from HGG with similar diagnostic performance. Regional abnormalities in the tumor area are usually not congruent indicating that tumor grading by 18 F-FET PET and PWI is based on different pathophysiological phenomena. (orig.)

Theory of linear operations

CERN Document Server

Banach, S

1987-01-01

This classic work by the late Stefan Banach has been translated into English so as to reach a yet wider audience. It contains the basics of the algebra of operators, concentrating on the study of linear operators, which corresponds to that of the linear forms a1x1 + a2x2 + ... + anxn of algebra.The book gathers results concerning linear operators defined in general spaces of a certain kind, principally in Banach spaces, examples of which are: the space of continuous functions, that of the pth-power-summable functions, Hilbert space, etc. The general theorems are interpreted in various mathematical areas, such as group theory, differential equations, integral equations, equations with infinitely many unknowns, functions of a real variable, summation methods and orthogonal series.A new fifty-page section (``Some Aspects of the Present Theory of Banach Spaces'''') complements this important monograph.

Characteristics and optimisation of vertical and planar tunnelling-FETs

International Nuclear Information System (INIS)

Sterkel, M; Wang, P-F; Nirschl, T; Fabel, B; Bhuwalka, K K; Schulze, J; Eisele, I; Schmitt-Landsiedel, D; Hansch, W

2005-01-01

Scaling MOSFETs becomes more and more difficult. The tunnelling-FET is a possible successor of today's MOSFET with better scaling possibilities. Two different device structures, a vertical and a planar version of a tunnelling-FET are presented and evaluated

Applicability of the fish embryo acute toxicity (FET) test (OECD 236) in the regulatory context of Registration, Evaluation, Authorisation, and Restriction of Chemicals (REACH).

NARCIS (Netherlands)

Sobanska, Marta; Scholz, Stefan; Nyman, Anna-Maija; Cesnaitis, Romanas; Gutierrez Alonso, Simon; Klüver, Nils; Kühne, Ralph; Tyle, Henrik; de Knecht, Joop; Dang, Zhichao; Lundbergh, Ivar; Carlon, Claudio; De Coen, Wim

In 2013 the Organisation for Economic Co-operation and Development (OECD) test guideline (236) for fish embryo acute toxicity (FET) was adopted. It determines the acute toxicity of chemicals to embryonic fish. Previous studies show a good correlation of FET with the standard acute fish toxicity

Ge/Si core/multi shell heterostructure FETs

Energy Technology Data Exchange (ETDEWEB)

Picraux, Samuel T [Los Alamos National Laboratory; Dayeh, Shadi A [Los Alamos National Laboratory

2010-01-01

Concentric heterostructured materials provide numerous design opportunities for engineering strain and interfaces, as well as tailoring energy band-edge combinations for optimal device performance. Key to the realization of such novel device concepts is the complete understanding and full control over their growth, crystal structure, and hetero-epitaxy. We report here on a new route for synthesizing Ge/Si core/multi-shell heterostructure nanowires that eliminate Au seed diffusion on the nanowire sidewalls by engineering the interface energy density difference. We show that such control over core/shell synthesis enable experimental realization of heterostructure FET devices beyond those available in the literature with enhanced transport characteristics. We provide a side-by-side comparison on the transport properties of Ge/Si core/multi-shell nanowires grown with and without Au diffusion and demonstrate heterostructure FETs with drive currents that are {approx} 2X higher than record results for p-type FETs.

Design for a FET based 1 MHz, 10 kV pulse generator

International Nuclear Information System (INIS)

Barnes, M.J.; Wait, G.D.

1995-08-01

A pulse generator consisting of a coaxial cable and a high voltage modulator, incorporating two stacks of Field-Effect Transistor (FET) switches operating in ''push-pull'' mode, has been designed and built. The modulator generates a continuous, unipolar, pulse train at a fundamental frequency of 1 MHz and a magnitude of 10 kV. The rise and fall times of the pulses are less than 39 ns. The two stacks each utilize 14 FETS, which are individually rated at 1 kV. The design incorporates a low-loss coaxial cable on which pulses are stored. Extensive PSpice simulations have been carried out to evaluate various design options. Subsequent measurements on the prototype pulse generator confirm the PSpice predictions. This system is applicable for the kicker system at TRIUMF

All Polymer FET Fabricated from Polypyrrole-Polyvinyl Alcohol (PPY—PVA) Nanocomposite

Science.gov (United States)

Bhadra, J.; Baruah, K.; Sarkar, D.

2010-10-01

We report here fabrication of the all polymer FET prepared from PPY—PVA nanocomposite. Synthesis of PPY is carried out by interface polymerization technique and then blended in PVA matrix in 1:100 wt/wt ratios. The spin cast film obtained from the above shows nanorod structure of 1-2 μm length and 50 nm diameter. FET is fabricated using overhead projector transparent sheet as substrate by spin cast method. Source, drain and gate electrodes are made by silver deposition. The I-V characteristics of the all polymer FET shows the clear behaviour of FET characteristics for a p-channel semiconductor. The threshold voltage and mobility of the device are found to be 96.4 volt and 21.3×10-4 cm2/Vs respectively. The device transconductance is obtained as 45.31 nS. The study possesses the potential for fabrication of low cost FET based on organic conducting polymers.

Twin-bit via resistive random access memory in 16 nm FinFET logic technologies

Science.gov (United States)

Shih, Yi-Hong; Hsu, Meng-Yin; King, Ya-Chin; Lin, Chrong Jung

2018-04-01

A via resistive random access memory (RRAM) cell fully compatible with the standard CMOS logic process has been successfully demonstrated for high-density logic nonvolatile memory (NVM) modules in advanced FinFET circuits. In this new cell, the transition metal layers are formed on both sides of a via, given two storage bits per via. In addition to its compact cell area (1T + 14 nm × 32 nm), the twin-bit via RRAM cell features a low operation voltage, a large read window, good data retention, and excellent cycling capability. As fine alignments between mask layers become possible, the twin-bit via RRAM cell is expected to be highly scalable in advanced FinFET technology.

Effect of the Curved Fin Top Edge on the Electrical Characteristics of FinFETs.

Science.gov (United States)

Ahn, Joonsung; Kim, Tae Whan

2018-03-01

The effect of the curved fin top edge on the electrical characteristics of FinFETs was investigated. The curvature radius of the fin top edge for the FinFETs was changed from 0 to 5 nm in order to determine the optimum condition of the electrical characteristics for the devices. The on-current level of the FinFETs with a curvature radius of 5 nm of fin top edge was 24.45% larger than that of the FinFETs with a cuboid fin. The electron current density and the electron mobility of the fin top edge for the FinFETs were larger than those for the FinFETs with a cuboid fin. The electrical characteristics of the FinFETs with a curvature radius of 5 nm for the fin top edge showed the best performance due to the largest expansion of the effective channel region.

DNA-FET using carbon nanotube electrodes

International Nuclear Information System (INIS)

Sasaki, T K; Ikegami, A; Aoki, N; Ochiai, Y

2006-01-01

We demonstrate DNA field effect transistor (DNA-FET) using multiwalled carbon nanotube (MWNT) as nano-structural source and drain electrodes. The MWNT electrodes have been fabricated by focused ion-beam bombardment (FIBB). A very short channel, approximately 50 nm, was easily formed between the severed MWNT. The current-voltage (I-V) characteristics of DNA molecules between the MWNT electrodes showed hopping transport property. We have also measured the gate-voltage dependence in the I-V characteristics and found that poly DNA molecules exhibits p-type conduction. The transport of DNA-FET can be explained by two hopping lengths which depend on the range of the source-drain bias voltages

Comparison of {sup 18}F-FET PET and perfusion-weighted MRI for glioma grading. A hybrid PET/MR study

Energy Technology Data Exchange (ETDEWEB)

Verger, Antoine [Forschungszentrum Juelich, Institute of Neuroscience and Medicine (INM-3, -4), Juelich (Germany); Lorraine University, Department of Nuclear Medicine and Nancyclotep Imaging Platform, CHRU Nancy, Nancy (France); Lorraine University, IADI, INSERM, UMR 947, Nancy (France); Filss, Christian P. [Forschungszentrum Juelich, Institute of Neuroscience and Medicine (INM-3, -4), Juelich (Germany); RWTH Aachen University Hospital, Department of Nuclear Medicine, Aachen (Germany); Lohmann, Philipp; Stoffels, Gabriele; Rota Kops, Elena [Forschungszentrum Juelich, Institute of Neuroscience and Medicine (INM-3, -4), Juelich (Germany); Sabel, Michael [University of Duesseldorf, Department of Neurosurgery, Duesseldorf (Germany); Wittsack, Hans J. [University Duesseldorf, Department of Diagnostic and Interventional Radiology, Medical Faculty, Duesseldorf (Germany); Galldiks, Norbert; Fink, Gereon R. [Forschungszentrum Juelich, Institute of Neuroscience and Medicine (INM-3, -4), Juelich (Germany); University of Cologne, Department of Neurology, Cologne (Germany); University of Cologne and Bonn, Center of Integrated Oncology (CIO), Bonn (Germany); Shah, Nadim J. [Forschungszentrum Juelich, Institute of Neuroscience and Medicine (INM-3, -4), Juelich (Germany); RWTH Aachen University Hospital, Department of Neurology, Aachen (Germany); Juelich-Aachen Research Alliance (JARA), Section JARA-Brain, Juelich (Germany); Langen, Karl-Josef [Forschungszentrum Juelich, Institute of Neuroscience and Medicine (INM-3, -4), Juelich (Germany); RWTH Aachen University Hospital, Department of Nuclear Medicine, Aachen (Germany); Juelich-Aachen Research Alliance (JARA), Section JARA-Brain, Juelich (Germany)

2017-12-15

Both perfusion-weighted MR imaging (PWI) and O-(2-{sup 18}F-fluoroethyl)-L-tyrosine PET ({sup 18}F-FET) provide grading information in cerebral gliomas. The aim of this study was to compare the diagnostic value of {sup 18}F-FET PET and PWI for tumor grading in a series of patients with newly diagnosed, untreated gliomas using an integrated PET/MR scanner. Seventy-two patients with untreated gliomas [22 low-grade gliomas (LGG), and 50 high-grade gliomas (HGG)] were investigated with {sup 18}F-FET PET and PWI using a hybrid PET/MR scanner. After visual inspection of PET and PWI maps (rCBV, rCBF, MTT), volumes of interest (VOIs) with a diameter of 16 mm were centered upon the maximum of abnormality in the tumor area in each modality and the contralateral unaffected hemisphere. Mean and maximum tumor-to-brain ratios (TBR{sub mean}, TBR{sub max}) were calculated. In addition, Time-to-Peak (TTP) and slopes of time-activity curves were calculated for {sup 18}F-FET PET. Diagnostic accuracies of {sup 18}F-FET PET and PWI for differentiating low-grade glioma (LGG) from high-grade glioma (HGG) were evaluated by receiver operating characteristic analyses (area under the curve; AUC). The diagnostic accuracy of {sup 18}F-FET PET and PWI to discriminate LGG from HGG was similar with highest AUC values for TBR{sub mean} and TBR{sub max} of {sup 18}F-FET PET uptake (0.80, 0.83) and for TBR{sub mean} and TBR{sub max} of rCBV (0.80, 0.81). In case of increased signal in the tumor area with both methods (n = 32), local hot-spots were incongruent in 25 patients (78%) with a mean distance of 10.6 ± 9.5 mm. Dynamic FET PET and combination of different parameters did not further improve diagnostic accuracy. Both {sup 18}F-FET PET and PWI discriminate LGG from HGG with similar diagnostic performance. Regional abnormalities in the tumor area are usually not congruent indicating that tumor grading by {sup 18}F-FET PET and PWI is based on different pathophysiological phenomena. (orig.)

Dielectric Modulated FET (DMFET)

Indian Academy of Sciences (India)

First page Back Continue Last page Graphics. Working Principle: Change in Dielectric constant due to immobilization of biomolecules in the nanogap cavity leads to change in effective gate capacitance and thus gate bias for FET. Working Principle: Change in Dielectric constant due to immobilization of biomolecules in the ...

Label-free SnO2 nanowire FET biosensor for protein detection

Science.gov (United States)

Jakob, Markus H.; Dong, Bo; Gutsch, Sebastian; Chatelle, Claire; Krishnaraja, Abinaya; Weber, Wilfried; Zacharias, Margit

2017-06-01

Novel tin oxide field-effect-transistors (SnO2 NW-FET) for pH and protein detection applicable in the healthcare sector are reported. With a SnO2 NW-FET the proof-of-concept of a bio-sensing device is demonstrated using the carrier transport control of the FET channel by a (bio-) liquid modulated gate. Ultra-thin Al2O3 fabricated by a low temperature atomic layer deposition (ALD) process represents a sensitive layer to H+ ions safeguarding the nanowire at the same time. Successful pH sensitivity is demonstrated for pH ranging from 3 to 10. For protein detection, the SnO2 NW-FET is functionalized with a receptor molecule which specifically interacts with the protein of interest to be detected. The feasibility of this approach is demonstrated via the detection of a biotinylated protein using a NW-FET functionalized with streptavidin. An immediate label-free electronic read-out of the signal is shown. The well-established Enzyme-Linked Immunosorbent Assay (ELISA) method is used to determine the optimal experimental procedure which would enable molecular binding events to occur while being compatible with a final label-free electronic read-out on a NW-FET. Integration of the bottom-up fabricated SnO2 NW-FET pH- and biosensor into a microfluidic system (lab-on-a-chip) allows the automated analysis of small volumes in the 400 μl range as would be desired in portable on-site point-of-care (POC) devices for medical diagnosis.

Atom-probe for FinFET dopant characterization

Energy Technology Data Exchange (ETDEWEB)

Kambham, A.K., E-mail: kambham@imec.be [K.U.Leuven, Instituut voor Kern-en Stralings fysika, Celestijnenlaan 200D, B-3001, Leuven (Belgium); IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Mody, J.; Gilbert, M.; Koelling, S.; Vandervorst, W. [K.U.Leuven, Instituut voor Kern-en Stralings fysika, Celestijnenlaan 200D, B-3001, Leuven (Belgium); IMEC, Kapeldreef 75, B-3001 Leuven (Belgium)

2011-05-15

With the continuous shrinking of transistors and advent of new transistor architectures to keep in pace with Moore's law and ITRS goals, there is a rising interest in multigate 3D-devices like FinFETs where the channel is surrounded by gates on multiple surfaces. The performance of these devices depends on the dimensions and the spatial distribution of dopants in source/drain regions of the device. As a result there is a need for new metrology approach/technique to characterize quantitatively the dopant distribution in these devices with nanometer precision in 3D. In recent years, atom probe tomography (APT) has shown its ability to analyze semiconductor and thin insulator materials effectively with sub-nm resolution in 3D. In this paper we will discuss the methodology used to study FinFET-based structures using APT. Whereas challenges and solutions for sample preparation linked to the limited fin dimensions already have been reported before, we report here an approach to prepare fin structures for APT, which based on their processing history (trenches filled with Si) are in principle invisible in FIB and SEM. Hence alternative solutions in locating and positioning them on the APT-tip are presented. We also report on the use of the atom probe results on FinFETs to understand the role of different dopant implantation angles (10{sup o} and 45{sup o}) when attempting conformal doping of FinFETs and provide a quantitative comparison with alternative approaches such as 1D secondary ion mass spectrometry (SIMS) and theoretical model values. -- Research highlights: {yields} This paper provides the information on how to characterize the FinFET devices using atom probe tomography (APT). {yields} Importance of this work is to assess the performance of these devices at different processing conditions by extracting the compositional profiles. {yields} The performance of these devices depends on the dimensions and the spatial distribution of dopants in source/drain regions

Atom-probe for FinFET dopant characterization

International Nuclear Information System (INIS)

Kambham, A.K.; Mody, J.; Gilbert, M.; Koelling, S.; Vandervorst, W.

2011-01-01

With the continuous shrinking of transistors and advent of new transistor architectures to keep in pace with Moore's law and ITRS goals, there is a rising interest in multigate 3D-devices like FinFETs where the channel is surrounded by gates on multiple surfaces. The performance of these devices depends on the dimensions and the spatial distribution of dopants in source/drain regions of the device. As a result there is a need for new metrology approach/technique to characterize quantitatively the dopant distribution in these devices with nanometer precision in 3D. In recent years, atom probe tomography (APT) has shown its ability to analyze semiconductor and thin insulator materials effectively with sub-nm resolution in 3D. In this paper we will discuss the methodology used to study FinFET-based structures using APT. Whereas challenges and solutions for sample preparation linked to the limited fin dimensions already have been reported before, we report here an approach to prepare fin structures for APT, which based on their processing history (trenches filled with Si) are in principle invisible in FIB and SEM. Hence alternative solutions in locating and positioning them on the APT-tip are presented. We also report on the use of the atom probe results on FinFETs to understand the role of different dopant implantation angles (10 o and 45 o ) when attempting conformal doping of FinFETs and provide a quantitative comparison with alternative approaches such as 1D secondary ion mass spectrometry (SIMS) and theoretical model values. -- Research highlights: → This paper provides the information on how to characterize the FinFET devices using atom probe tomography (APT). → Importance of this work is to assess the performance of these devices at different processing conditions by extracting the compositional profiles. → The performance of these devices depends on the dimensions and the spatial distribution of dopants in source/drain regions. → In this publication we

Intrapartální fetální monitoring, senzitivita a specificita metod

Czech Academy of Sciences Publication Activity Database

Hájek, Z.; Srp, B.; Pavlíková, Markéta; Zvárová, Jana; Liška, K.; Haddad El, R.; Pašková, A.; Pařízek, A.

2006-01-01

Roč. 71, č. 4 (2006), s. 263-267 ISSN 1210-7832 Grant - others:GA MZd(CZ) NH7664 Institutional research plan: CEZ:AV0Z10300504 Keywords : senzitivita * specificita * diagnostika hypoxie * kardiotokografie * fetální pulzní oxymetrie * ST analýza EKG plodu Subject RIV: BB - Applied Statistics, Operational Research

Effect of hysteretic and non-hysteretic negative capacitance on tunnel FETs DC performance

Science.gov (United States)

Saeidi, Ali; Jazaeri, Farzan; Stolichnov, Igor; Luong, Gia V.; Zhao, Qing-Tai; Mantl, Siegfried; Ionescu, Adrian M.

2018-03-01

This work experimentally demonstrates that the negative capacitance effect can be used to significantly improve the key figures of merit of tunnel field effect transistor (FET) switches. In the proposed approach, a matching condition is fulfilled between a trained-polycrystalline PZT capacitor and the tunnel FET (TFET) gate capacitance fabricated on a strained silicon-nanowire technology. We report a non-hysteretic switch configuration by combining a homojunction TFET and a negative capacitance effect booster, suitable for logic applications, for which the on-current is increased by a factor of 100, the transconductance by 2 orders of magnitude, and the low swing region is extended. The operation of a hysteretic negative capacitance TFET, when the matching condition for the negative capacitance is fulfilled only in a limited region of operation, is also reported and discussed. In this late case, a limited improvement in the device performance is observed. Overall, the paper demonstrates the main beneficial effects of negative capacitance on TFETs are the overdrive and transconductance amplification, which exactly address the most limiting performances of current TFETs.

High performance flexible CMOS SOI FinFETs

KAUST Repository

Fahad, Hossain M.

2014-06-01

We demonstrate the first ever CMOS compatible soft etch back based high performance flexible CMOS SOI FinFETs. The move from planar to non-planar FinFETs has enabled continued scaling down to the 14 nm technology node. This has been possible due to the reduction in off-state leakage and reduced short channel effects on account of the superior electrostatic charge control of multiple gates. At the same time, flexible electronics is an exciting expansion opportunity for next generation electronics. However, a fully integrated low-cost system will need to maintain ultra-large-scale-integration density, high performance and reliability - same as today\\'s traditional electronics. Up until recently, this field has been mainly dominated by very weak performance organic electronics enabled by low temperature processes, conducive to low melting point plastics. Now however, we show the world\\'s highest performing flexible version of 3D FinFET CMOS using a state-of-the-art CMOS compatible fabrication technique for high performance ultra-mobile consumer applications with stylish design. © 2014 IEEE.

Perfect commuting-operator strategies for linear system games

Science.gov (United States)

Cleve, Richard; Liu, Li; Slofstra, William

2017-01-01

Linear system games are a generalization of Mermin's magic square game introduced by Cleve and Mittal. They show that perfect strategies for linear system games in the tensor-product model of entanglement correspond to finite-dimensional operator solutions of a certain set of non-commutative equations. We investigate linear system games in the commuting-operator model of entanglement, where Alice and Bob's measurement operators act on a joint Hilbert space, and Alice's operators must commute with Bob's operators. We show that perfect strategies in this model correspond to possibly infinite-dimensional operator solutions of the non-commutative equations. The proof is based around a finitely presented group associated with the linear system which arises from the non-commutative equations.

Side-gated ultrathin-channel nanopore FET sensors

International Nuclear Information System (INIS)

Yanagi, Itaru; Haga, Takanobu; Ando, Masahiko; Yamamoto, Jiro; Mine, Toshiyuki; Ishida, Takeshi; Hatano, Toshiyuki; Akahori, Rena; Yokoi, Takahide; Anazawa, Takashi; Oura, Takeshi

2016-01-01

A side-gated, ultrathin-channel nanopore FET (SGNAFET) is proposed for fast and label-free DNA sequencing. The concept of the SGNAFET comprises the detection of changes in the channel current during DNA translocation through a nanopore and identifying the four types of nucleotides as a result of these changes. To achieve this goal, both p- and n-type SGNAFETs with a channel thicknesses of 2 or 4 nm were fabricated, and the stable transistor operation of both SGNAFETs in air, water, and a KCl buffer solution were confirmed. In addition, synchronized current changes were observed between the ionic current through the nanopore and the SGNAFET’s drain current during DNA translocation through the nanopore. (paper)

Oligo- and polymeric FET devices: Thiophene-based active materials and their interaction with different gate dielectrics

International Nuclear Information System (INIS)

Porzio, W.; Destri, S.; Pasini, M.; Bolognesi, A.; Angiulli, A.; Di Gianvincenzo, P.; Natali, D.; Sampietro, M.; Caironi, M.; Fumagalli, L.; Ferrari, S.; Peron, E.; Perissinotti, F.

2006-01-01

Derivatives of both oligo- and polythiophene-based FET were recently considered for low cost electronic applications. In the device optimization, factors like redox reversibility of the molecule/polymer, electronic level compatibility with source/drain electrodes, packing closeness, and orientation versus the electrodes, can determine the overall performance. In addition, a gate insulator with a high dielectric constant, a low leakage current, and capability to promote ordering in the semiconductor is required to increase device performances and to lower the FET operating voltage. In this view, Al 2 O 3 appears a good candidate, although its widespread adoption is limited by the disorder that such oxide induces on the semiconductor with detrimental consequences on semiconductor electrical properties. In this contribution, an overview of recent results obtained on thiophene-derivative-based FET devices, fabricated by different growth techniques, and using both thermally grown SiO 2 and Al 2 O 3 from atomic layer deposition gate insulators will be reported and discussed with particular reference to organic solid state aggregation, morphology, and organic-inorganic interface

Comparison of 18F-FET PET and 5-ALA fluorescence in cerebral gliomas

International Nuclear Information System (INIS)

Floeth, Frank Willi; Sabel, Michael; Steiger, Hans Jakob; Ewelt, Christian; Stummer, Walter; Felsberg, Joerg; Reifenberger, Guido; Stoffels, Gabriele; Langen, Karl-Josef; Coenen, Heinz Hubert

2011-01-01

The aim of the study was to compare presurgical 18 F-fluoroethyl-L-tyrosine ( 18 F-FET) uptake and Gd-diethylenetriaminepentaacetic acid (DTPA) enhancement on MRI (Gd) with intraoperative 5-aminolevulinic acid (5-ALA) fluorescence in cerebral gliomas. 18 F-FET positron emission tomography (PET) was performed in 30 patients with brain lesions suggestive of diffuse WHO grade II or III gliomas on MRI. PET and MRI data were coregistered to guide neuronavigated biopsies before resection. After oral application of 5-ALA, 38 neuronavigated biopsies were taken from predefined tumour areas that were positive or negative for 18 F-FET or Gd and checked for 5-ALA fluorescence. 18 F-FET uptake with a mean tumour to brain ratio ≥1.6 was rated as positive. Of 38 biopsies, 21 corresponded to high-grade glioma tissue (HGG) of WHO grade III (n = 19) or IV (n = 2) and 17 biopsies to low-grade glioma tissue (LGG) of WHO grade II. In biopsies corresponding to HGG, 18 F-FET PET was positive in 86% (18/21), but 5-ALA and Gd in only 57% (12/21). A mismatch between Gd and 5-ALA was observed in 6 of 21 cases of HGG biopsy samples (3 Gd-positive/5-ALA-negative and 3 Gd-negative/5-ALA-positive). In biopsies corresponding to LGG, 18 F-FET was positive in 41% (7/17), while 5-ALA and Gd were negative in all but one instance. All tumour areas with 5-ALA fluorescence were positive on 18 F-FET PET. There are differences between 18 F-FET and 5-ALA uptake in cerebral gliomas owing to a limited sensitivity of 5-ALA to detect tumour tissue especially in LGG. 18 F-FET PET is more sensitive to detect glioma tissue than 5-ALA fluorescence and should be considered as an additional tool in resection planning. (orig.)

Use of FET in automatic scanning of measurements using thermocouples and self-powered neutron detectors

International Nuclear Information System (INIS)

Plaige, Yves.

1977-01-01

Advantages lying in using FET switches in the relays of multiplexing systems are shown with two examples of application. Their performance as regard fast reliable operation are used in temperature measurement scanning inside nuclear reactors. As for current measurements using self-powered neutron detectors, the weak leakage currents of said switches ( [fr

Development of a new electron gun pulser by using high-speed MOS-FET's

International Nuclear Information System (INIS)

Suzuki, Ryoichi; Mikado, Tomohisa; Ohgaki, Hideaki; Chiwaki, Mitsukuni; Yamada, Kawakatsu; Sei, Norihiro; Sugiyama, Suguru; Noguchi, Tsutomu; Yamazaki, Tetsuo

1993-01-01

A new pulser for a low-emittance electron gun of the ETL linac has been developed by using high-speed MOS-FET's. The pulser can produce pulses of variable pulse width (5 ns - 4 μs) and of variable pulse height. Furthermore, the pulser can be operated with burst mode (100 ns period, more than 20 cycles) for single bunch injection to electron storage rings. (author)

Gyrokinetic linearized Landau collision operator

DEFF Research Database (Denmark)

Madsen, Jens

2013-01-01

, which is important in multiple ion-species plasmas. Second, the equilibrium operator describes drag and diffusion of the magnetic field aligned component of the vorticity associated with the E×B drift. Therefore, a correct description of collisional effects in turbulent plasmas requires the equilibrium......The full gyrokinetic electrostatic linearized Landau collision operator is calculated including the equilibrium operator, which represents the effect of collisions between gyrokinetic Maxwellian particles. First, the equilibrium operator describes energy exchange between different plasma species...... operator, even for like-particle collisions....

Palladium configuration dependence of hydrogen detection sensitivity based on graphene FET for breath analysis

Science.gov (United States)

Sakamoto, Yuri; Uemura, Kohei; Ikuta, Takashi; Maehashi, Kenzo

2018-04-01

We have succeeded in fabricating a hydrogen gas sensor based on palladium-modified graphene field-effect transistors (FETs). The negative-voltage shift in the transfer characteristics was observed with exposure to hydrogen gas, which was explained by the change in work function. The hydrogen concentration dependence of the voltage shift was investigated using graphene FETs with palladium deposited by three different evaporation processes. The results indicate that the hydrogen detection sensitivity of the palladium-modified graphene FETs is strongly dependent on the palladium configuration. Therefore, the palladium-modified graphene FET is a candidate for breath analysis.

Orientation Effects in Ballistic High-Strained P-type Si Nanowire FETs

Directory of Open Access Journals (Sweden)

Hong Yu

2009-04-01

Full Text Available In order to design and optimize high-sensitivity silicon nanowire-field-effect transistor (SiNW FET pressure sensors, this paper investigates the effects of channel orientations and the uniaxial stress on the ballistic hole transport properties of a strongly quantized SiNW FET placed near the high stress regions of the pressure sensors. A discrete stress-dependent six-band k.p method is used for subband structure calculation, coupled to a two-dimensional Poisson solver for electrostatics. A semi-classical ballistic FET model is then used to evaluate the ballistic current-voltage characteristics of SiNW FETs with and without strain. Our results presented here indicate that [110] is the optimum orientation for the p-type SiNW FETs and sensors. For the ultra-scaled 2.2 nm square SiNW, due to the limit of strong quantum confinement, the effect of the uniaxial stress on the magnitude of ballistic drive current is too small to be considered, except for the [100] orientation. However, for larger 5 nm square SiNW transistors with various transport orientations, the uniaxial tensile stress obviously alters the ballistic performance, while the uniaxial compressive stress slightly changes the ballistic hole current. Furthermore, the competition of injection velocity and carrier density related to the effective hole masses is found to play a critical role in determining the performance of the nanotransistors.

Intra-individual comparison of F-18-FLT PET and F-18 FET PET in brain tumor patients

International Nuclear Information System (INIS)

Kim, S.; Cheon, G.J.; Cho, Y.S.; Kwak, H.S.; Lee, C.H.; Choi, C.W.; Lim, S.M.

2004-01-01

Full text: The nucleoside analogue 18F-3'-deoxy-3'-fluorothymidine (FLT) for cellular proliferation and the amino acid analogue O- (2'18F-fluoroethyl)-L-tyrosine (FET) are recently developed PET-tracer for tumor imaging. Previous studies have demonstrated that the diagnostic ability of FET PET better than FDG PET in patient with newly diagnosed or recurrent brain tumors after radiation therapy. To compare findings on FLT PET with FET PET, we prospectively undertook FLT, FET and FDG PET in same patient with suspected primary/metastatic and recurrent brain tumors. Seventeen studies (FLT +FET + FDG: 13, FLT+FDG: 3, FLT +FET: 1) in 16 consecutive patients (47 ± 8.3 years, M: F 10: 6) with brain tumor (3 for initial diagnosis, 6 for therapeutic response, 6 for detecting recurrence, 1 for diagnosis and recurrence both) were included. Brain tumors were 14 gliomas (6 high-grade, 9 low-grade by the WHO classification), 2 metastatic brain tumors and 1 CNS lymphoma. 18F-FDG, FLT and FET PET were performed within two weeks. Attenuation-corrected brain images were acquired 30 minutes after injection of 370-555 MBq FDG, FLT and FET with a dedicated PET scanner (ECAT HR+ scanner, Siemens-CTI, Knoxville, Tenn., USA). Maximum SUV (max SUV) and relative uptake defined by FLT and FET accumulation within the tumor in relation to a contra lateral control region (max SUV for tumor/mean SUV for contra lateral normal gray matter) were calculated. A total of 26 tumor foci (26 on FLT and FDG, 22 on FET) in 17 studies were analysed. In most of tumor foci (20 of 22) FLT and FET PET images showed a similar extent of tumor activity. In 2 tumor foci discrepant findings were noticed; intense FLT uptake with negative FLT uptake in primary CNS lymphoma and negative FLT uptake with mild FET uptake in low-grade astrocytoma. Overall positive FLT, FET and FDG uptakes were 85 % (22/26), 90 % (18/ 20) and 58 % (15/26) respectively. Max SUV and relative FLT/FET uptake: The mean max SUV of FLT (0.97 ± 0

Flexible nanoscale high-performance FinFETs

KAUST Repository

Sevilla, Galo T.; Ghoneim, Mohamed T.; Fahad, Hossain M.; Rojas, Jhonathan Prieto; Hussain, Aftab M.; Hussain, Muhammad Mustafa

2014-01-01

With the emergence of the Internet of Things (IoT), flexible high-performance nanoscale electronics are more desired. At the moment, FinFET is the most advanced transistor architecture used in the state-of-the-art microprocessors. Therefore, we show

Congruency of tumour volume delineated by FET PET and MRSI

Energy Technology Data Exchange (ETDEWEB)

Mauler, Jörg; Langen, Karl-Josef [Institute of Neuroscience and Medicine, Forschungszentrum Jülich (Germany); Maudsley, Andrew A [Miller School of Medicine, University of Miami (United States); Nikoubashman, Omid [Department of Neuroradiology, Faculty of Medicine, RWTH Aachen University (Germany); Filss, Christian; Stoffels, Gabriele; Shah, N Jon [Institute of Neuroscience and Medicine, Forschungszentrum Jülich (Germany)

2015-05-18

In addition to MR imaging, PET imaging of O-(2-[18F]Fluorethyl)-L-Tyrosine (FET) uptake provides information on brain tumour extent and metabolic activity. Similarly, MRS has been shown to be of value for distinguishing high- from low-grade gliomas. Based on 2D spatially resolved MRSI, an overlap between 18FET uptake and the choline/N-acetyl-aspartate (Cho/NAA) ratio of more than 75 % has been reported.

Capacitor charging FET switcher with controller to adjust pulse width

Science.gov (United States)

Mihalka, Alex M.

1986-01-01

A switching power supply includes an FET full bridge, a controller to drive the FETs, a programmable controller to dynamically control final output current by adjusting pulse width, and a variety of protective systems, including an overcurrent latch for current control. Power MOSFETS are switched at a variable frequency from 20-50 kHz to charge a capacitor load from 0 to 6 kV. A ferrite transformer steps up the DC input. The transformer primary is a full bridge configuration with the FET switches and the secondary is fed into a high voltage full wave rectifier whose output is connected directly to the energy storage capacitor. The peak current is held constant by varying the pulse width using predetermined timing resistors and counting pulses. The pulse width is increased as the capacitor charges to maintain peak current. A digital ripple counter counts pulses, and after the desired number is reached, an up-counter is clocked. The up-counter output is decoded to choose among different resistors used to discharge a timing capacitor, thereby determining the pulse width. A current latch shuts down the supply on overcurrent due to either excessive pulse width causing transformer saturation or a major bridge fault, i.e., FET or transformer failure, or failure of the drive circuitry.

Measurements on a FET based 1 MHz, 10 kV pulse generator

International Nuclear Information System (INIS)

Wait, G.D.; Barnes, M.J.

1995-08-01

A prototype pulser, which incorporates thirty-two 1 kV Field-Effect Transistor (FET) modules, has been built and tested at TRIUMF. The pulser has been developed for application in a scheme for pulsed extraction from the TRIUMF 500 MeV cyclotron. Deflection of the beam will be provided by an electric field between a set of 1 in long deflector plates. The pulser generates a continuous, unipolar, pulse train at a fundamental frequency of approximately 1 MHz and a magnitude of 10 kV. The pulses have 38 ns rise and fall times and are stored on a low-loss coaxial cable which interconnects the pulse generator and the deflector plates. The circuit performance was evaluated with the aid of PSpice in the design stage and confirmed by measurements on the prototype. Temperature measurements have been performed on 1 kV FET modules under DC conditions and compared with temperatures under operating conditions to ensure that switching losses are acceptable. Results of various measurements are presented and compared with simulations

Measurements on a FET based 1 MHz, 10 kV pulse generator

International Nuclear Information System (INIS)

Wait, G.D.; Barnes, M.J.

1995-08-01

A prototype pulser, which incorporates thirty-two 1 kV Field-Effect Transistor (FET) modules, has been built and tested at TRIUMF. The pulser has been developed for application in a scheme for pulsed extraction from the TRIUMF 500 MeV cyclotron. Deflection of the beam will be provided by an electric field between a set of 1 m long deflector plates. The pulser generates a continuous unipolar, pulse train at a fundamental frequency of approximately 1 MHz and a magnitude of 10 kV. The pulses have 38 ns rise and fall times and are stored on a low-loss coaxial cable which interconnects the pulse generator and the deflector plates. The circuit performance was evaluated with the aid of PSpice in the design stage and confirmed by measurements on the prototype. Temperature measurements have been performed on 1 kV FET modules under DC conditions and compared with temperatures under operating conditions to ensure that switching losses are acceptable. Results of various measurements are presented and compared with simulations. (author)

Relapse patterns after radiochemotherapy of glioblastoma with FET PET-guided boost irradiation and simulation to optimize radiation target volume

International Nuclear Information System (INIS)

Piroth, Marc D.; Galldiks, Norbert; Pinkawa, Michael; Holy, Richard; Stoffels, Gabriele; Ermert, Johannes; Mottaghy, Felix M.; Shah, N. Jon; Langen, Karl-Josef; Eble, Michael J.

2016-01-01

O-(2-18 F-fluoroethyl)-L-tyrosine-(FET)-PET may be helpful to improve the definition of radiation target volumes in glioblastomas compared with MRI. We analyzed the relapse patterns in FET-PET after a FET- and MRI-based integrated-boost intensity-modulated radiotherapy (IMRT) of glioblastomas to perform an optimized target volume definition. A relapse pattern analysis was performed in 13 glioblastoma patients treated with radiochemotherapy within a prospective phase-II-study between 2008 and 2009. Radiotherapy was performed as an integrated-boost intensity-modulated radiotherapy (IB-IMRT). The prescribed dose was 72 Gy for the boost target volume, based on baseline FET-PET (FET-1) and 60 Gy for the MRI-based (MRI-1) standard target volume. The single doses were 2.4 and 2.0 Gy, respectively. Location and volume of recurrent tumors in FET-2 and MRI-2 were analyzed related to initial tumor, detected in baseline FET-1. Variable target volumes were created theoretically based on FET-1 to optimally cover recurrent tumor. The tumor volume overlap in FET and MRI was poor both at baseline (median 12 %; range 0–32) and at time of recurrence (13 %; 0–100). Recurrent tumor volume in FET-2 was localized to 39 % (12–91) in the initial tumor volume (FET-1). Over the time a shrinking (mean 12 (5–26) ml) and shifting (mean 6 (1–10 mm) of the resection cavity was seen. A simulated target volume based on active tumor in FET-1 with an additional safety margin of 7 mm around the FET-1 volume covered recurrent FET tumor volume (FET-2) significantly better than a corresponding target volume based on contrast enhancement in MRI-1 with a same safety margin of 7 mm (100 % (54–100) versus 85 % (0–100); p < 0.01). A simulated planning target volume (PTV), based on FET-1 and additional 7 mm margin plus 5 mm margin for setup-uncertainties was significantly smaller than the conventional, MR-based PTV applied in this study (median 160 (112–297) ml versus 231 (117–386) ml, p < 0

Monsieur Philippe Galli Préfet de l’Ain France

CERN Multimedia

Maximilien Brice

2011-01-01

Photo 35: Le chef du département Physique P. Bloch, le porte-parole de la Collaboration CMS G. Tonelli,le Sous-Préfet de Gex O. Laurens-Bernard, le chef du département Technologie F. Bordry, le Péfet de l'Ain P. Galli et le Directeur-général R. Heuer. Photo 62: signature du livre d'or avec le Directeur de la recherche et de l'informatique S. Bertolucci.

Intraindividual comparison of F-18-FLT PET and F-18 FET PET in brain tumor patients

International Nuclear Information System (INIS)

Kim, Sung Eun; Cheon, G. J.; Cho, Y. S.; Kwak, H. S.; Lee, C. H.; Choi, C. W.; Lim, S. M.

2003-01-01

To compare findings on FLT PET with FET PET, we prospectively undertaken FLT, FET and FDG PET in same patient with suspected primary/metastatic and recurrent brain tumors. Seventeen studies in 16 patients (47 8.3 years, M: F 10: 6) with brain tumor (3 for initial diagnosis, 6 for therapeutic response, 6 for detecting recurrence, 1 for diagnosis and recurrence both) were included. Brain tumors were 14 gliomas (6 high- grade 9 low-grade by the WHO classification), 2 metastatic brain tumors and 1 CNS lymphoma. 18F-FDG, FLT and FET PET were performed within two weeks. Attenuation-corrected brain images were acquired 30 minutes after injection of 370-555 MBq FDG, FLT and FET with a dedicated PET scanner (ECAT HR scanner, Siemens-CTI). Maximum SUV (max SUV) and relative uptake defined by FLT and FET accumulation within the tumor in relation to a contralateral control region (max SUV for tumor/ mean SUV for contralateral normal gray matter) were calculated. 26 tumor foci were analyzed. Relative FLT uptake (4.17 2.4, 0.58 to 7.45) was grater than than FET uptake (2.03 1.17, 0.92 to 4.53 (p<0.0006)) and FDG uptake (1.16 0.34, 0.76 to 2.08). Among FLT, FET and FDG uptakes in 20 tumor foci, correlation were poor. the relative FLT uptake of high-grade glioma was higher than low-glioma (6.070.76 vs 3.11 2.15, p=0.002), however, relative FET uptake was not different significantly (2.68 1.51, high-grade vs 1.970.78, low-grade). The correlation between tumor grade (high vs low grade) and relative uptake (FLT and FET) was shown only with relative FLT uptake (r=0.62, p=0.002). The best cut off value of relative FLT uptake between high-grade and low-grade glioma was 4.54 (AUC: 0.89 sensitivity: 100 specificity: 86.7%). Compared with FET uptake, FLT uptake showed much higher contrast and associated with tumor grade. Further study, evaluation of proliferative index of Ki-67 and its relationship with FLT and FET uptake, are ongoing

Noise analysis and performance of a selfscanned linear InSb detector array

International Nuclear Information System (INIS)

Finger, G.; Meyer, M.; Moorwood, A.F.M.

1987-01-01

A noise model for detectors operated in the capacitive discharge mode is presented. It is used to analyze the noise performance of the ESO nested timing readout technique applied to a linear 32-element InSb array which is multiplexed by a silicon switched-FET shift register. Analysis shows that KTC noise of the videoline is the major noise contribution; it can be eliminated by weighted double-correlated sampling. Best noise performance of this array is achieved at the smallest possible reverse bias voltage (not more than 20 mV) whereas excess noise is observed at higher reverse bias voltages. 5 references

Cascading reaction of arginase and urease on a graphene-based FET for ultrasensitive, real-time detection of arginine.

Science.gov (United States)

Berninger, Teresa; Bliem, Christina; Piccinini, Esteban; Azzaroni, Omar; Knoll, Wolfgang

2018-09-15

Herein, a biosensor based on a reduced graphene oxide field effect transistor (rGO-FET) functionalized with the cascading enzymes arginase and urease was developed for the detection of L-arginine. Arginase and urease were immobilized on the rGO-FET sensing surface via electrostatic layer-by-layer assembly using polyethylenimine (PEI) as cationic building block. The signal transduction mechanism is based on the ability of the cascading enzymes to selectively perform chemical transformations and prompt local pH changes, that are sensitively detected by the rGO-FET. In the presence of L-arginine, the transistors modified with (PEI/urease(arginase)) multilayers showed a shift in the Dirac point due to the change in the local pH close to the graphene surface, produced by the catalyzed urea hydrolysis. The transistors were able to monitor L-arginine in the 10-1000 μM linear range with a LOD of 10 μM, displaying a fast response and a good long-term stability. The sensor showed stereospecificity and high selectivity in the presence of non-target amino acids. Taking into account the label-free, real-time measurement capabilities and the easily quantifiable, electronic output signal, this biosensor offers advantages over state-of-the-art L-arginine detection methods. Copyright © 2018 The Authors. Published by Elsevier B.V. All rights reserved.

Differential uptake of [18F]FET and [3H]L-methionine in focal cortical ischemia

International Nuclear Information System (INIS)

Salber, Dagmar; Stoffels, Gabriele; Pauleit, Dirk; Reifenberger, Guido; Sabel, Michael; Shah, Nadim Jon; Hamacher, Kurt; Coenen, Heinz H.; Langen, Karl-Josef

2006-01-01

Amino acids such as [ 11 C-methyl]L-methionine are particularly useful in brain tumor diagnosis, but unspecific uptake (e.g., in cerebral ischemia) has been reported. O-(2-[ 18 F]fluoroethyl)-L-tyrosine ([ 18 F]FET) shows a clinical potential similar to that of L-methionine (MET) in brain tumor diagnosis but is applicable on a wider clinical scale. The aim of this study was to evaluate the uptake of [ 18 F]FET and [ 3 H]MET in focal cortical ischemia in rats by dual-tracer autoradiography. Methods: Focal cortical ischemia was induced in 25 CDF rats using the photothrombosis (PT) model. At different time points up to 6 weeks after the induction of PT, [ 18 F]FET and [ 3 H]MET were injected intravenously. Additionally, contrast-enhanced magnetic resonance imaging (MRI) was performed in 10 animals. One hour after tracer injection, brains were cut in coronal sections and evaluated by dual-tracer autoradiography. Lesion-to-brain (L/B) ratios were calculated by dividing the maximal uptake in the lesion by the mean uptake in the brain. An L/B ratio of >2.0 was considered indicative of pathological uptake. Histological slices were stained by cresyl violet and supplemented by immunostainings for glial fibrillary acidic protein (GFAP) and CD68 in selected cases. Results: A variably increased uptake of both tracers was observed in the PT lesion and its demarcation zone up to 7 days after PT for [ 18 F]FET and up to 6 weeks for [ 3 H]MET. The cutoff level of 2.0 was exceeded in 12/25 animals for [ 18 F]FET and in 18/25 animals for [ 3 H]MET. Focally increased tracer uptake matched contrast enhancement in MRI in 3/10 cases for [ 18 F]FET and in 5/10 cases for [ 3 H]MET. Immunohistochemical staining in lesions with differential uptake of [ 18 F]FET and [ 3 H]MET revealed that selective uptake of [ 18 F]FET was associated with GFAP-positive astrogliosis while selective [ 3 H]MET uptake correlated with CD68-positive macrophage infiltration. Conclusions: [ 18 F]FET, like [ 3 H

Comparison of {sup 18}F-FET and {sup 18}F-FDG PET in brain tumors

Energy Technology Data Exchange (ETDEWEB)

Pauleit, Dirk; Stoffels, Gabriele [Institute of Neuroscience and Medicine, Forschungszentrum Juelich, D-52425 Juelich (Germany); Bachofner, Ansgar [Clinic of Nuclear Medicine, Heinrich-Heine-University, D-40001 Duesseldorf (Germany); Floeth, Frank W.; Sabel, Michael [Department of Neurosurgery, Heinrich-Heine-University, D-40001 Duesseldorf (Germany); Herzog, Hans; Tellmann, Lutz [Institute of Neuroscience and Medicine, Forschungszentrum Juelich, D-52425 Juelich (Germany); Jansen, Paul [Institute of Advanced Simulation, Forschungszentrum Juelich, D-52425 Juelich (Germany); Reifenberger, Guido [Department of Neuropathology, Heinrich-Heine-University, D-40001 Duesseldorf (Germany); Hamacher, Kurt; Coenen, Heinz H. [Institute of Neuroscience and Medicine, Forschungszentrum Juelich, D-52425 Juelich (Germany); Langen, Karl-Josef [Institute of Neuroscience and Medicine, Forschungszentrum Juelich, D-52425 Juelich (Germany)], E-mail: k.j.langen@fz-juelich.de

2009-10-15

The purpose of this study was to compare the diagnostic value of positron emission tomography (PET) using [{sup 18}F]-fluorodeoxyglucose ({sup 18}F-FDG) and O-(2-[{sup 18}F]fluoroethyl)-L-tyrosine ({sup 18}F-FET) in patients with brain lesions suspicious of cerebral gliomas. Methods: Fifty-two patients with suspicion of cerebral glioma were included in this study. From 30 to 50 min after injection of 180 MBq {sup 18}F-FET, a first PET scan ({sup 18}F-FET scan) was performed. Thereafter, 240 MBq {sup 18}F-FDG was injected and a second PET scan was acquired from 30 to 60 min after the second injection ({sup 18}F-FET/{sup 18}F-FDG scan). The cerebral accumulation of {sup 18}F-FDG was calculated by decay corrected subtraction of the {sup 18}F-FET scan from the {sup 18}F-FET/{sup 18}F-FDG scan. Tracer uptake was evaluated by visual scoring and by lesion-to-background (L/B) ratios. The imaging results were compared with the histological results and prognosis. Results: Histology revealed 24 low-grade gliomas (LGG) of World Health Organization (WHO) Grade II and 19 high-grade gliomas (HGG) of WHO Grade III or IV, as well as nine others, mainly benign histologies. The gliomas showed increased {sup 18}F-FET uptake (>normal brain) in 86% and increased {sup 18}F-FDG uptake (>white matter) in 35%. {sup 18}F-FET PET provided diagnostically useful delineation of tumor extent while this was impractical with {sup 18}F-FDG due to high tracer uptake in the gray matter. A local maximum in the tumor area for biopsy guidance could be identified with {sup 18}F-FET in 76% and with {sup 18}F-FDG in 28%. The L/B ratios showed significant differences between LGG and HGG for both tracers but considerable overlap so that reliable preoperative grading was not possible. A significant correlation of tracer uptake with overall survival was found with {sup 18}F-FDG only. In some benign lesions like abscesses, increased uptake was observed for both tracers indicating a limited specificity of both

18F-FET-PET in Primary Hyperparathyroidism

DEFF Research Database (Denmark)

Krakauer, Martin; Kjær, Andreas; Bennedbæk, Finn Noe

2016-01-01

-isotope parathyroid subtraction single photon emission computed tomography had determined the exact location of the parathyroid adenoma. A dynamic FET PET/CT scan was performed with subsequent visual evaluation and calculation of target-to-background (TBR; parathyroid vs. thyroid). The maximum TBR in the two patients......Preoperative localisation of the diseased parathyroid gland(s) in primary hyperparathyroidism (PHP) is a prerequisite for subsequent minimally invasive surgery. Recently, as alternatives to conventional sestamibi parathyroid scintigraphy, the (11)C-based positron emission tomography (PET) tracers...... methionine and choline have shown promise for this purpose. We evaluated the feasibility of using the (18)F-based PET tracer fluoroethyl-l-tyrosine (FET), as the longer half-life of (18)F makes it logistically more favourable. As a proof-of-concept study, we included two patients with PHP in which dual...

Peak thrust operation of linear induction machines from parameter identification

Energy Technology Data Exchange (ETDEWEB)

Zhang, Z.; Eastham, T.R.; Dawson, G.E. [Queen`s Univ., Kingston, Ontario (Canada). Dept. of Electrical and Computer Engineering

1995-12-31

Various control strategies are being used to achieve high performance operation of linear drives. To maintain minimum volume and weight of the power supply unit on board the transportation vehicle, peak thrust per unit current operation is a desirable objective. True peak thrust per unit current through slip control is difficult to achieve because the parameters of linear induction machines vary during normal operation. This paper first develops a peak thrust per unit current control law based on the per-phase equivalent circuit for linear induction machines. The algorithm for identification of the variable parameters in induction machines is then presented. Application to an operational linear induction machine (LIM) demonstrates the utility of this algorithm. The control strategy is then simulated, based on an operational transit LIM, to show the capability of achieving true peak thrust operation for linear induction machines.

Dynamic 18F-FET PET in newly diagnosed astrocytic low-grade glioma identifies high-risk patients.

Science.gov (United States)

Jansen, Nathalie L; Suchorska, Bogdana; Wenter, Vera; Eigenbrod, Sabina; Schmid-Tannwald, Christine; Zwergal, Andreas; Niyazi, Maximilian; Drexler, Mark; Bartenstein, Peter; Schnell, Oliver; Tonn, Jörg-Christian; Thon, Niklas; Kreth, Friedrich-Wilhelm; la Fougère, Christian

2014-02-01

Because the clinical course of low-grade gliomas in the individual adult patient varies considerably and is unpredictable, we investigated the prognostic value of dynamic (18)F-fluorethyltyrosine ((18)F-FET) PET in the early diagnosis of astrocytic low-grade glioma (World Health Organization grade II). Fifty-nine patients with newly diagnosed low-grade glioma and dynamic (18)F-FET PET before histopathologic assessment were retrospectively investigated. (18)F-FET PET analysis comprised a qualitative visual classification of lesions; assessment of the semiquantitative parameters maximal, mean, and total standardized uptake value as ratio to background and biologic tumor volume; and dynamic analysis of intratumoral (18)F-FET uptake over time (increasing vs. decreasing time-activity curves). The correlation between PET parameters and progression-free survival, overall survival, and time to malignant transformation was investigated. (18)F-FET uptake greater than the background level was found in 34 of 59 tumors. Dynamic (18)F-FET uptake analysis was available for 30 of these 34 patients. Increasing and decreasing time-activity curves were found in 18 and 12 patients, respectively. Neither the qualitative factor presence or absence of (18)F-FET uptake nor any of the semiquantitative uptake parameters significantly influenced clinical outcome. In contrast, decreasing time-activity curves in the kinetic analysis were highly prognostic for shorter progression-free survival and time to malignant transformation (P dynamic (18)F-FET PET constitute an unfavorable prognostic factor in astrocytic low-grade glioma and, by identifying high-risk patients, may ease treatment decisions.

Effects of ultra-thin Si-fin body widths upon SOI PMOS FinFETs

Science.gov (United States)

Liaw, Yue-Gie; Chen, Chii-Wen; Liao, Wen-Shiang; Wang, Mu-Chun; Zou, Xuecheng

2018-05-01

Nano-node tri-gate FinFET devices have been developed after integrating a 14 Å nitrided gate oxide upon the silicon-on-insulator (SOI) wafers established on an advanced CMOS logic platform. These vertical double gate (FinFET) devices with ultra-thin silicon fin (Si-fin) widths ranging from 27 nm to 17 nm and gate length down to 30 nm have been successfully developed with a 193 nm scanner lithography tool. Combining the cobalt fully silicidation and the CESL strain technology beneficial for PMOS FinFETs was incorporated into this work. Detailed analyses of Id-Vg characteristics, threshold voltage (Vt), and drain-induced barrier lowering (DIBL) illustrate that the thinnest 17 nm Si-fin width FinFET exhibits the best gate controllability due to its better suppression of short channel effect (SCE). However, higher source/drain resistance (RSD), channel mobility degradation due to dry etch steps, or “current crowding effect” will slightly limit its transconductance (Gm) and drive current.

Modeling Nanoscale FinFET Performance by a Neural Network Method

Directory of Open Access Journals (Sweden)

Jin He

2017-07-01

Full Text Available This paper presents a neural network method to model nanometer FinFET performance. The principle of this method is firstly introduced and its application in modeling DC and conductance characteristics of nanoscale FinFET transistor is demonstrated in detail. It is shown that this method does not need parameter extraction routine while its prediction of the transistor performance has a small relative error within 1 % compared with measured data, thus this new method is as accurate as the physics based surface potential model.

Large baby syndrome in singletons born after frozen embryo transfer (FET)

DEFF Research Database (Denmark)

Pinborg, Anja; Henningsen, AA; Loft, A

2013-01-01

Are singletons born after frozen embryo transfer (FET) at increased risk of being born large for gestational age (LGA) and if so, is this caused by intrinsic maternal factors or related to the freezing/thawing procedures?......Are singletons born after frozen embryo transfer (FET) at increased risk of being born large for gestational age (LGA) and if so, is this caused by intrinsic maternal factors or related to the freezing/thawing procedures?...

Simulation study of a 3-D device integrating FinFET and UTBFET

KAUST Repository

Fahad, Hossain M.

2015-01-01

By integrating 3-D nonplanar fins and 2-D ultrathin bodies, wavy FinFETs merge two formerly competing technologies on a silicon-on-insulator platform to deliver enhanced transistor performance compared with conventional trigate FinFETs with unprecedented levels of chip-area efficiency. This makes it suitable for ultralarge-scale integration high-performance logic at and beyond the 10-nm technology node.

Development of MOS-FET based Marx generator with self-proved gate power

International Nuclear Information System (INIS)

Tokuchi, A.; Jiang, W.; Takayama, K.; Arai, T.; Kawakubo, T.; Adachi, T.

2012-01-01

New MOS-FET based Marx generator is described. An electric gate power for the MOS-FET is provided from the Marx main circuit itself. Four-stage Marx generator generates -12kV of the output voltage. The Marx Generator is successfully used to drive an Einzel lens chopper to generate a short pulsed ion beam for a KEK digital accelerator. (author)

pH measurements of FET-based (bio)chemical sensors using portable measurement system.

Science.gov (United States)

Voitsekhivska, T; Zorgiebel, F; Suthau, E; Wolter, K-J; Bock, K; Cuniberti, G

2015-01-01

In this study we demonstrate the sensing capabilities of a portable multiplex measurement system for FET-based (bio)chemical sensors with an integrated microfluidic interface. We therefore conducted pH measurements with Silicon Nanoribbon FET-based Sensors using different measurement procedures that are suitable for various applications. We have shown multiplexed measurements in aqueous medium for three different modes that are mutually specialized in fast data acquisition (constant drain current), calibration-less sensing (constant gate voltage) and in providing full information content (sweeping mode). Our system therefore allows surface charge sensing for a wide range of applications and is easily adaptable for multiplexed sensing with novel FET-based (bio)chemical sensors.

The prognostic value of FET PET at radiotherapy planning in newly diagnosed glioblastoma

Energy Technology Data Exchange (ETDEWEB)

Hoejklint Poulsen, Sidsel [The Finsen Center, Rigshospitalet, Department of Radiation Biology, Copenhagen (Denmark); Center of Diagnostic Investigation, Rigshospitalet, Department of Clinical Physiology, Nuclear Medicine and PET, Copenhagen (Denmark); Urup, Thomas; Grunnet, Kirsten; Skovgaard Poulsen, Hans [The Finsen Center, Rigshospitalet, Department of Radiation Biology, Copenhagen (Denmark); The Finsen Center, Rigshospitalet, Department of Oncology, Copenhagen (Denmark); Jarle Christensen, Ib [University of Copenhagen, Hvidovre Hospital, Laboratory of Gastroenterology, Copenhagen (Denmark); Larsen, Vibeke Andree [Center of Diagnostic Investigation, Rigshospitalet, Department of Radiology, Copenhagen (Denmark); Lundemann Jensen, Michael; Munck af Rosenschoeld, Per [The Finsen Center, Rigshospitalet, Department of Oncology, Copenhagen (Denmark); The Finsen Center, Rigshospitalet, Section of Radiotherapy, Copenhagen (Denmark); Law, Ian [Center of Diagnostic Investigation, Rigshospitalet, Department of Clinical Physiology, Nuclear Medicine and PET, Copenhagen (Denmark)

2017-03-15

Glioblastoma patients show a great variability in progression free survival (PFS) and overall survival (OS). To gain additional pretherapeutic information, we explored the potential of O-(2-{sup 18}F-fluoroethyl)-L-tyrosine (FET) PET as an independent prognostic biomarker. We retrospectively analyzed 146 consecutively treated, newly diagnosed glioblastoma patients. All patients were treated with temozolomide and radiation therapy (RT). CT/MR and FET PET scans were obtained postoperatively for RT planning. We used Cox proportional hazards models with OS and PFS as endpoints, to test the prognostic value of FET PET biological tumor volume (BTV). Median follow-up time was 14 months, and median OS and PFS were 16.5 and 6.5 months, respectively. In the multivariate analysis, increasing BTV (HR = 1.17, P < 0.001), poor performance status (HR = 2.35, P < 0.001), O(6)-methylguanine-DNA methyltransferase protein status (HR = 1.61, P = 0.024) and higher age (HR = 1.32, P = 0.013) were independent prognostic factors of poor OS. For poor PFS, only increasing BTV (HR = 1.18; P = 0.002) was prognostic. A prognostic index for OS was created based on the identified prognostic factors. Large BTV on FET PET is an independent prognostic factor of poor OS and PFS in glioblastoma patients. With the introduction of FET PET, we obtain a prognostic index that can help in glioblastoma treatment planning. (orig.)

Scattering theory of the linear Boltzmann operator

International Nuclear Information System (INIS)

Hejtmanek, J.

1975-01-01

In time dependent scattering theory we know three important examples: the wave equation around an obstacle, the Schroedinger and the Dirac equation with a scattering potential. In this paper another example from time dependent linear transport theory is added and considered in full detail. First the linear Boltzmann operator in certain Banach spaces is rigorously defined, and then the existence of the Moeller operators is proved by use of the theorem of Cook-Jauch-Kuroda, that is generalized to the case of a Banach space. (orig.) [de

Modelling of Impulsional pH Variations Using ChemFET-Based Microdevices: Application to Hydrogen Peroxide Detection

Directory of Open Access Journals (Sweden)

Abdou Karim Diallo

2014-02-01

Full Text Available This work presents the modelling of impulsional pH variations in microvolume related to water-based electrolysis and hydrogen peroxide electrochemical oxidation using an Electrochemical Field Effect Transistor (ElecFET microdevice. This ElecFET device consists of a pH-Chemical FET (pH-ChemFET with an integrated microelectrode around the dielectric gate area in order to trigger electrochemical reactions. Combining oxidation/reduction reactions on the microelectrode, water self-ionization and diffusion properties of associated chemical species, the model shows that the sensor response depends on the main influential parameters such as: (i polarization parameters on the microelectrode, i.e., voltage (Vp and time (tp; (ii distance between the gate sensitive area and the microelectrode (d; and (iii hydrogen peroxide concentration ([H2O2]. The model developed can predict the ElecFET response behaviour and creates new opportunities for H2O2-based enzymatic detection of biomolecules.

Architecture design of resistor/FET-logic demultiplexer for hybrid CMOS/nanodevice circuit interconnect

Energy Technology Data Exchange (ETDEWEB)

Li Shu; Zhang Tong [Department of Electrical, Computer and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180 (United States)], E-mail: lis4@rpi.edu, E-mail: tzhang@ecse.rpi.edu

2008-05-07

Hybrid nanoelectronics consisting of nanodevice crossbars on top of CMOS backplane circuits is emerging as one viable option to sustain Moore's law after the CMOS scaling limit is reached. One main design challenge in such hybrid nanoelectronics is the interface between the highly dense nanowires in nanodevice crossbars and relatively coarse microwires in the CMOS domain. Such an interface can be realized through a logic circuit called a demultiplexer (demux). In this context, all the prior work on demux design uses a single type of device, such as resistor, diode or field effect transistor (FET), to realize the demultiplexing function. However, different types of devices have their own advantages and disadvantages in terms of functionality, manufacturability, speed and power consumption. This makes none of them provide a satisfactory solution. To tackle this challenge, this work proposes to combine resistor with FET to implement the demux, leading to the hybrid resistor/FET-logic demux. Such hybrid demux architecture can make these two types of devices complement each other well to improve the overall demux design effectiveness. Furthermore, due to the inevitable fabrication process variations at the nanoscale, the effects of resistor conductance and FET threshold voltage variability are analyzed and evaluated based on computer simulations. The simulation results provide the requirement on the fabrication process to ensure a high demux reliability, and promise the hybrid resistor/FET-logic demux an improved addressability and process variance tolerance.

Architecture design of resistor/FET-logic demultiplexer for hybrid CMOS/nanodevice circuit interconnect.

Science.gov (United States)

Li, Shu; Zhang, Tong

2008-05-07

Hybrid nanoelectronics consisting of nanodevice crossbars on top of CMOS backplane circuits is emerging as one viable option to sustain Moore's law after the CMOS scaling limit is reached. One main design challenge in such hybrid nanoelectronics is the interface between the highly dense nanowires in nanodevice crossbars and relatively coarse microwires in the CMOS domain. Such an interface can be realized through a logic circuit called a demultiplexer (demux). In this context, all the prior work on demux design uses a single type of device, such as resistor, diode or field effect transistor (FET), to realize the demultiplexing function. However, different types of devices have their own advantages and disadvantages in terms of functionality, manufacturability, speed and power consumption. This makes none of them provide a satisfactory solution. To tackle this challenge, this work proposes to combine resistor with FET to implement the demux, leading to the hybrid resistor/FET-logic demux. Such hybrid demux architecture can make these two types of devices complement each other well to improve the overall demux design effectiveness. Furthermore, due to the inevitable fabrication process variations at the nanoscale, the effects of resistor conductance and FET threshold voltage variability are analyzed and evaluated based on computer simulations. The simulation results provide the requirement on the fabrication process to ensure a high demux reliability, and promise the hybrid resistor/FET-logic demux an improved addressability and process variance tolerance.

Architecture design of resistor/FET-logic demultiplexer for hybrid CMOS/nanodevice circuit interconnect

International Nuclear Information System (INIS)

Li Shu; Zhang Tong

2008-01-01

Hybrid nanoelectronics consisting of nanodevice crossbars on top of CMOS backplane circuits is emerging as one viable option to sustain Moore's law after the CMOS scaling limit is reached. One main design challenge in such hybrid nanoelectronics is the interface between the highly dense nanowires in nanodevice crossbars and relatively coarse microwires in the CMOS domain. Such an interface can be realized through a logic circuit called a demultiplexer (demux). In this context, all the prior work on demux design uses a single type of device, such as resistor, diode or field effect transistor (FET), to realize the demultiplexing function. However, different types of devices have their own advantages and disadvantages in terms of functionality, manufacturability, speed and power consumption. This makes none of them provide a satisfactory solution. To tackle this challenge, this work proposes to combine resistor with FET to implement the demux, leading to the hybrid resistor/FET-logic demux. Such hybrid demux architecture can make these two types of devices complement each other well to improve the overall demux design effectiveness. Furthermore, due to the inevitable fabrication process variations at the nanoscale, the effects of resistor conductance and FET threshold voltage variability are analyzed and evaluated based on computer simulations. The simulation results provide the requirement on the fabrication process to ensure a high demux reliability, and promise the hybrid resistor/FET-logic demux an improved addressability and process variance tolerance

Submicron FETs Using Molecular Beam Epitaxy.

Science.gov (United States)

1981-01-01

2rin w2Cgs Req + 2(rw 2Cg2 Req + rin 2Reqgs Podell 9 has found empirically for one-micron gate length FETs that R =1.25 (10) eq gm Using Eq. (10) in...Transmission, Modulation, and Noise (McGraw- Hill, NY, 1959), p. 223. 9. A. Podell , to be published. 10. P. Wolf, "Microwave Properties of Schottky-Barrier

Simultaneous evaluation of brain tumour metabolism, structure and blood volume using [18F]-fluoroethyltyrosine (FET) PET/MRI

DEFF Research Database (Denmark)

Henriksen, Otto M.; Larsen, Vibeke A; Muhic, Aida

2016-01-01

PURPOSE: Both [(18)F]-fluoroethyltyrosine (FET) PET and blood volume (BV) MRI supplement routine T1-weighted contrast-enhanced MRI in gliomas, but whether the two modalities provide identical or complementary information is unresolved. The aims of the study were to investigate the feasibility...... of simultaneous structural MRI, BV MRI and FET PET of gliomas using an integrated PET/MRI scanner and to assess the spatial and quantitative agreement in tumour imaging between BV MRI and FET PET. METHODS: A total of 32 glioma patients underwent a 20-min static simultaneous PET/MRI acquisition on a Siemens m......MR system 20 min after injection of 200 MBq FET. The MRI protocol included standard structural MRI and dynamic susceptibility contrast (DSC) imaging for BV measurements. Maximal relative tumour FET uptake (TBRmax) and BV (rBVmax), and Dice coefficients were calculated to assess the quantitative and spatial...

Textural analysis of pre-therapeutic [18F]-FET-PET and its correlation with tumor grade and patient survival in high-grade gliomas

Energy Technology Data Exchange (ETDEWEB)

Pyka, Thomas; Hiob, Daniela; Wester, Hans-Juergen [Klinikum Rechts der Isar der TU Muenchen, Department of Nuclear Medicine, Munich (Germany); Gempt, Jens; Ringel, Florian; Meyer, Bernhard [Klinikum Rechts der Isar der TU Muenchen, Neurosurgic Department, Munich (Germany); Schlegel, Juergen [Klinikum Rechts der Isar der TU Muenchen, Institute of Pathology and Neuropathology, Munich (Germany); Bette, Stefanie [Klinikum Rechts der Isar der TU Muenchen, Neuroradiologic department, Munich (Germany); Foerster, Stefan [Klinikum Rechts der Isar der TU Muenchen, Department of Nuclear Medicine, Munich (Germany); Klinikum Rechts der Isar der TU Muenchen, TUM Neuroimaging Center (TUM-NIC), Munich (Germany)

2016-01-15

Amino acid positron emission tomography (PET) with [18F]-fluoroethyl-L-tyrosine (FET) is well established in the diagnostic work-up of malignant brain tumors. Analysis of FET-PET data using tumor-to-background ratios (TBR) has been shown to be highly valuable for the detection of viable hypermetabolic brain tumor tissue; however, it has not proven equally useful for tumor grading. Recently, textural features in 18-fluorodeoxyglucose-PET have been proposed as a method to quantify the heterogeneity of glucose metabolism in a variety of tumor entities. Herein we evaluate whether textural FET-PET features are of utility for grading and prognostication in patients with high-grade gliomas. One hundred thirteen patients (70 men, 43 women) with histologically proven high-grade gliomas were included in this retrospective study. All patients received static FET-PET scans prior to first-line therapy. TBR (max and mean), volumetric parameters and textural parameters based on gray-level neighborhood difference matrices were derived from static FET-PET images. Receiver operating characteristic (ROC) and discriminant function analyses were used to assess the value for tumor grading. Kaplan-Meier curves and univariate and multivariate Cox regression were employed for analysis of progression-free and overall survival. All FET-PET textural parameters showed the ability to differentiate between World Health Organization (WHO) grade III and IV tumors (p < 0.001; AUC 0.775). Further improvement in discriminatory power was possible through a combination of texture and metabolic tumor volume, classifying 85 % of tumors correctly (AUC 0.830). TBR and volumetric parameters alone were correlated with tumor grade, but showed lower AUC values (0.644 and 0.710, respectively). Furthermore, a correlation of FET-PET texture but not TBR was shown with patient PFS and OS, proving significant in multivariate analysis as well. Volumetric parameters were predictive for OS, but this correlation did not

FET PET for the evaluation of untreated gliomas: correlation of FET uptake and uptake kinetics with tumour grading

International Nuclear Information System (INIS)

Poepperl, Gabriele; Koch, Walter; Gildehaus, Franz J.; Tatsch, Klaus; Kreth, Friedrich W.; Mehrkens, Jan H.; Tonn, Joerg C.; Herms, Jochen; Kretzschmar, Hans A.; Seelos, Klaus

2007-01-01

Treatment and prognosis of gliomas depend on their histological tumour grade. The aim of the study was to evaluate the potential of [ 18 F]fluoroethyltyrosine (FET) PET for non-invasive tumour grading in untreated patients. Dynamic FET PET studies were performed in 54 patients who, based on MRI, were estimated to have low grade (LG; n = 20), intermediate (WHO II-III; n = 4) or high grade (HG; n = 30) tumours. For standard evaluation, tumour SUV max and the ratio to background (SUV max /BG) were calculated (sum image: 20-40 min). For dynamic evaluation, mean SUV values within a 90% isocontour ROI (SUV90) and the SUV90/BG ratios were determined for each time frame to evaluate the course of FET uptake. Results were correlated with histopathological findings from PET-guided stereotactic biopsies. Histology revealed gliomas in all patients. Using the standard method a statistically significant difference (p = 0.001) was found between LG (n = 20; SUV max /BG: 2.16 ± 0.98) and HG (n = 34; SUV max /BG: 3.29 ± 1.06) gliomas (opt. threshold 2.58: SN71%/SP85%/area under ROC curve [AUC]:0.798), however, with a marked overlap between WHO II to IV tumours. Time activity curves showed slight increase in LG, whereas HG tumours presented with an early peak (10-20 min) followed by a decrease. Dynamic evaluation successfully separated LG from HG gliomas with higher diagnostic accuracy (SN94%/SP100%/AUC:0.967). Based on the ratio-based method, a statistically significant difference was found between LG and HG gliomas. Due to the interindividual variability, however, no reliable individual grading was possible. In contrast, dynamic evaluation allowed LG and HG gliomas to be differentiated with high diagnostic power and, thus, should supplement the conventional method. (orig.)

Improved surface-roughness scattering and mobility models for multi-gate FETs with arbitrary cross-section and biasing scheme

Science.gov (United States)

Lizzit, D.; Badami, O.; Specogna, R.; Esseni, D.

2017-06-01

We present a new model for surface roughness (SR) scattering in n-type multi-gate FETs (MuGFETs) and gate-all-around nanowire FETs with fairly arbitrary cross-sections, its implementation in a complete device simulator, and the validation against experimental electron mobility data. The model describes the SR scattering matrix elements as non-linear transformations of interface fluctuations, which strongly influences the root mean square value of the roughness required to reproduce experimental mobility data. Mobility simulations are performed via the deterministic solution of the Boltzmann transport equation for a 1D-electron gas and including the most relevant scattering mechanisms for electronic transport, such as acoustic, polar, and non-polar optical phonon scattering, Coulomb scattering, and SR scattering. Simulation results show the importance of accounting for arbitrary cross-sections and biasing conditions when compared to experimental data. We also discuss how mobility is affected by the shape of the cross-section as well as by its area in gate-all-around and tri-gate MuGFETs.

Intra-lesional spatial correlation of static and dynamic FET-PET parameters with MRI-based cerebral blood volume in patients with untreated glioma.

Science.gov (United States)

Göttler, Jens; Lukas, Mathias; Kluge, Anne; Kaczmarz, Stephan; Gempt, Jens; Ringel, Florian; Mustafa, Mona; Meyer, Bernhard; Zimmer, Claus; Schwaiger, Markus; Förster, Stefan; Preibisch, Christine; Pyka, Thomas

2017-03-01

18 F-fluorethyltyrosine-(FET)-PET and MRI-based relative cerebral blood volume (rCBV) have both been used to characterize gliomas. Recently, inter-individual correlations between peak static FET-uptake and rCBV have been reported. Herein, we assess the local intra-lesional relation between FET-PET parameters and rCBV. Thirty untreated glioma patients (27 high-grade) underwent simultaneous PET/MRI on a 3 T hybrid scanner obtaining structural and dynamic susceptibility contrast sequences. Static FET-uptake and dynamic FET-slope were correlated with rCBV within tumour hotspots across patients and intra-lesionally using a mixed-effects model to account for inter-individual variation. Furthermore, maximal congruency of tumour volumes defined by FET-uptake and rCBV was determined. While the inter-individual relationship between peak static FET-uptake and rCBV could be confirmed, our intra-lesional, voxel-wise analysis revealed significant positive correlations (median r = 0.374, p dynamic FET-PET variance and maximal overlap of respective tumour volumes was 37% on average. Our results show that the relation between peak values of MR-based rCBV and static FET-uptake can also be observed intra-individually on a voxel basis and also applies to a dynamic FET parameter, possibly determining hotspots of higher biological malignancy. However, just a small part of the FET-PET signal variance is explained by rCBV and tumour volumes determined by the two modalities showed only moderate overlap. These findings indicate that FET-PET and MR-based rCBV provide both congruent and complimentary information on glioma biology.

Impact of line edge roughness on the performance of 14-nm FinFET: Device-circuit Co-design

Science.gov (United States)

Rathore, Rituraj Singh; Rana, Ashwani K.

2018-01-01

With the evolution of sub-20 nm FinFET technology, line edge roughness (LER) has been identified as a critical problem and may result in critical device parameter variation and performance limitation in the future VLSI circuit application. In the present work, an analytical model of fin-LER has been presented, which shows the impact of correlated and uncorrelated LER on FinFET structure. Further, the influence of correlated and uncorrelated fin- LER on all electrical performance parameters is thoroughly investigated using the three-dimensional (3-D) Technology Computer Aided Design (TCAD) simulations for 14-nm technology node. Moreover, the impact of all possible fin shapes on threshold voltage (VTH), drain induced barrier lowering (DIBL), on-current (ION), and off-current (IOFF) has been compared with the well calibrated rectangular FinFET structure. In addition, the influence of all possible fin geometries on the read stability of six-transistor (6-T) Static-Random-Access-Memory (SRAM) has been investigated. The study reveals that fin-LER plays a vital role as it directly governs the electrostatics of the FinFET structure. This has been found that there is a high degree of fluctuations in all performance parameters for uncorrelated fin-LER type FinFETs as compared to correlated fin-LER with respect to rectangular FinFET structure. This paper gives physical insight of FinFET design, especially in sub-20 nm technology nodes by concluding that the impact of LER on electrical parameters are minimum for correlated LER.

Integrated analysis of dynamic FET PET/CT parameters, histology, and methylation profiling of 44 gliomas.

Science.gov (United States)

Röhrich, Manuel; Huang, Kristin; Schrimpf, Daniel; Albert, Nathalie L; Hielscher, Thomas; von Deimling, Andreas; Schüller, Ulrich; Dimitrakopoulou-Strauss, Antonia; Haberkorn, Uwe

2018-05-07

Dynamic 18 F-FET PET/CT is a powerful tool for the diagnosis of gliomas. 18 F-FET PET time-activity curves (TAC) allow differentiation between histological low-grade gliomas (LGG) and high-grade gliomas (HGG). Molecular methods such as epigenetic profiling are of rising importance for glioma grading and subclassification. Here, we analysed dynamic 18 F-FET PET data, and the histological and epigenetic features of 44 gliomas. Dynamic 18 F-FET PET was performed in 44 patients with newly diagnosed, untreated glioma: 10 WHO grade II glioma, 13 WHO grade III glioma and 21 glioblastoma (GBM). All patients underwent stereotactic biopsy or tumour resection after 18 F-FET PET imaging. As well as histological analysis of tissue samples, DNA was subjected to epigenetic analysis using the Illumina 850 K methylation array. TACs, standardized uptake values corrected for background uptake in healthy tissue (SUVmax/BG), time to peak (TTP) and kinetic modelling parameters were correlated with histological diagnoses and with epigenetic signatures. Multivariate analyses were performed to evaluate the diagnostic accuracy of 18 F-FET PET in relation to the tumour groups identified by histological and methylation-based analysis. Epigenetic profiling led to substantial tumour reclassification, with six grade II/III gliomas reclassified as GBM. Overlap of HGG-typical TACs and LGG-typical TACs was dramatically reduced when tumours were clustered on the basis of their methylation profile. SUVmax/BG values of GBM were higher than those of LGGs following both histological diagnosis and methylation-based diagnosis. The differences in TTP between GBMs and grade II/III gliomas were greater following methylation-based diagnosis than following histological diagnosis. Kinetic modeling showed that relative K1 and fractal dimension (FD) values significantly differed in histology- and methylation-based GBM and grade II/III glioma between those diagnosed histologically and those diagnosed by

Schwarzian conditions for linear differential operators with selected differential Galois groups

International Nuclear Information System (INIS)

Abdelaziz, Y; Maillard, J-M

2017-01-01

We show that non-linear Schwarzian differential equations emerging from covariance symmetry conditions imposed on linear differential operators with hypergeometric function solutions can be generalized to arbitrary order linear differential operators with polynomial coefficients having selected differential Galois groups. For order three and order four linear differential operators we show that this pullback invariance up to conjugation eventually reduces to symmetric powers of an underlying order-two operator. We give, precisely, the conditions to have modular correspondences solutions for such Schwarzian differential equations, which was an open question in a previous paper. We analyze in detail a pullbacked hypergeometric example generalizing modular forms, that ushers a pullback invariance up to operator homomorphisms. We finally consider the more general problem of the equivalence of two different order-four linear differential Calabi–Yau operators up to pullbacks and conjugation, and clarify the cases where they have the same Yukawa couplings. (paper)

Schwarzian conditions for linear differential operators with selected differential Galois groups

Science.gov (United States)

Abdelaziz, Y.; Maillard, J.-M.

2017-11-01

We show that non-linear Schwarzian differential equations emerging from covariance symmetry conditions imposed on linear differential operators with hypergeometric function solutions can be generalized to arbitrary order linear differential operators with polynomial coefficients having selected differential Galois groups. For order three and order four linear differential operators we show that this pullback invariance up to conjugation eventually reduces to symmetric powers of an underlying order-two operator. We give, precisely, the conditions to have modular correspondences solutions for such Schwarzian differential equations, which was an open question in a previous paper. We analyze in detail a pullbacked hypergeometric example generalizing modular forms, that ushers a pullback invariance up to operator homomorphisms. We finally consider the more general problem of the equivalence of two different order-four linear differential Calabi-Yau operators up to pullbacks and conjugation, and clarify the cases where they have the same Yukawa couplings.

Intra-lesional spatial correlation of static and dynamic FET-PET parameters with MRI-based cerebral blood volume in patients with untreated glioma

Energy Technology Data Exchange (ETDEWEB)

Goettler, Jens; Preibisch, Christine [TU Muenchen, Department of Neuroradiology, Klinikum rechts der Isar, Munich (Germany); TU Muenchen, TUM Neuroimaging Center (TUM-NIC), Klinikum rechts der Isar, Munich (Germany); Lukas, Mathias; Mustafa, Mona; Schwaiger, Markus; Pyka, Thomas [TU Muenchen, Department of Nuclear Medicine, Klinikum rechts der Isar, Munich (Germany); Kluge, Anne; Kaczmarz, Stephan; Zimmer, Claus [TU Muenchen, Department of Neuroradiology, Klinikum rechts der Isar, Munich (Germany); Gempt, Jens; Ringel, Florian; Meyer, Bernhard [TU Muenchen, Department of Neurosurgery, Klinikum rechts der Isar, Munich (Germany); Foerster, Stefan [TU Muenchen, TUM Neuroimaging Center (TUM-NIC), Klinikum rechts der Isar, Munich (Germany); TU Muenchen, Department of Nuclear Medicine, Klinikum rechts der Isar, Munich (Germany); Klinikum Bayreuth, Department of Nuclear Medicine, Bayreuth (Germany)

2017-03-15

{sup 18}F-fluorethyltyrosine-(FET)-PET and MRI-based relative cerebral blood volume (rCBV) have both been used to characterize gliomas. Recently, inter-individual correlations between peak static FET-uptake and rCBV have been reported. Herein, we assess the local intra-lesional relation between FET-PET parameters and rCBV. Thirty untreated glioma patients (27 high-grade) underwent simultaneous PET/MRI on a 3 T hybrid scanner obtaining structural and dynamic susceptibility contrast sequences. Static FET-uptake and dynamic FET-slope were correlated with rCBV within tumour hotspots across patients and intra-lesionally using a mixed-effects model to account for inter-individual variation. Furthermore, maximal congruency of tumour volumes defined by FET-uptake and rCBV was determined. While the inter-individual relationship between peak static FET-uptake and rCBV could be confirmed, our intra-lesional, voxel-wise analysis revealed significant positive correlations (median r = 0.374, p < 0.0001). Similarly, significant inter- and intra-individual correlations were observed between FET-slope and rCBV. However, rCBV explained only 12% of the static and 5% of the dynamic FET-PET variance and maximal overlap of respective tumour volumes was 37% on average. Our results show that the relation between peak values of MR-based rCBV and static FET-uptake can also be observed intra-individually on a voxel basis and also applies to a dynamic FET parameter, possibly determining hotspots of higher biological malignancy. However, just a small part of the FET-PET signal variance is explained by rCBV and tumour volumes determined by the two modalities showed only moderate overlap. These findings indicate that FET-PET and MR-based rCBV provide both congruent and complimentary information on glioma biology. (orig.)

Variability study of Si nanowire FETs with different junction gradients

Directory of Open Access Journals (Sweden)

Jun-Sik Yoon

2016-01-01

Full Text Available Random dopant fluctuation effects of gate-all-around Si nanowire field-effect transistors (FETs are investigated in terms of different diameters and junction gradients. The nanowire FETs with smaller diameters or shorter junction gradients increase relative variations of the drain currents and the mismatch of the drain currents between source-drain and drain-source bias change in the saturation regime. Smaller diameters decreased current drivability critically compared to standard deviations of the drain currents, thus inducing greater relative variations of the drain currents. Shorter junction gradients form high potential barriers in the source-side lightly-doped extension regions at on-state, which determines the magnitude of the drain currents and fluctuates the drain currents greatly under thermionic-emission mechanism. On the other hand, longer junction gradients affect lateral field to fluctuate the drain currents greatly. These physical phenomena coincide with correlations of the variations between drain currents and electrical parameters such as threshold voltages and parasitic resistances. The nanowire FETs with relatively-larger diameters and longer junction gradients without degrading short channel characteristics are suggested to minimize the relative variations and the mismatch of the drain currents.

Synthesis and preliminary evaluation of [18F]FEtP4A, a promising PET tracer for mapping acetylcholinesterase in vivo

International Nuclear Information System (INIS)

Zhang Mingrong; Tsuchiyama, Akio; Haradahira, Terushi; Furutsuka, Kenji; Yoshida, Yuichiro; Junko Noguchi, Takayo Kida; Irie, Toshiaki; Suzuki, Kazutoshi

2002-01-01

N-[ 18 F]Fluoroethyl-4-piperidyl acetate ([ 18 F]FEtP4A), an analog of [ 11 C]MP4A for mapping brain acetylcholineseterase (AchE) activity, was prepared by reacting 4-piperidyl acetate (P4A) with [ 18 F]fluoroethyl bromide ([ 18 F]FEtBr) using a newly developed automated system. Preliminary evaluation showed that the initial uptake of [ 18 F]FEtP4A in the mouse brain was > 8% injected dose/g tissue. The distribution pattern of [ 18 F]FEtP4A in the brain was striatum>cerebral cortex>cerebellum within 10-120 min post-injection, which reflected the distribution rank pattern of AchE activity in the brain. Moreover, chemical analysis of in vivo radioactive metabolites in the mouse brain indicated that 83% of [ 18 F]FEtP4A was hydrolyzed to N-[ 18 F]fluoroethyl-4-piperidinol ([ 18 F]FEtP4OH) after 1 min intravenous injection. From these results, [ 18 F]FEtP4A may become a promising PET tracer for mapping the AchE in vivo

Positive Quasi Linear Operator Formulation

International Nuclear Information System (INIS)

Berry, L.A.; Jaeger, E.F.

2005-01-01

Expressions for the RF quasi-linear operator are biquadratic sums over the Fourier modes (or FLR equivalent) that describe the RF electric field with a kernel that is a function of the two wave vectors, k-vector L and k-vector R , in the sum. As a result of either an implicit or explicit average over field lines or flux surfaces, this kernel only depends on one parallel wave vector, conventionally k R -vector. When k-vector is an independent component of the representation for E, the sums are demonstrably positive. However, except for closed field line systems, k-vector is dependent on the local direction of the equilibrium magnetic field, and, empirically, the absorbed energy and quasi-linear diffusion coefficients are observed to have negative features. We have formally introduced an independent k-vector sum by Fourier transforming the RF electric field (assuming straight field lines) using a field-line-length coordinate. The resulting expression is positive. We have modeled this approach by calculating the quasi linear operator for 'modes' with fixed k-vector. We form these modes by discretizing k-vector and then assigning all of the Fourier components with k-vectorthat fall within a given k-vector bin to that k-vector mode. Results will be shown as a function of the number of bins. Future work will involve implementing the expressions derived from the Fourier transform and evaluating the dependence on field line length

An Interindividual Comparison of O-(2- [18F]Fluoroethyl)-L-Tyrosine (FET)– and L-[Methyl-11C]Methionine (MET)–PET in Patients With Brain Gliomas and Metastases

International Nuclear Information System (INIS)

Grosu, Anca-Ligia; Astner, Sabrina T.; Riedel, Eva; Nieder, Carsten; Wiedenmann, Nicole; Heinemann, Felix; Schwaiger, Markus

2011-01-01

Purpose: L-[methyl- 11 C]methionine (MET)–positron emission tomography (PET) has a high sensitivity and specificity for imaging of gliomas and metastatic brain tumors. The short half-life of 11 C (20 minutes) limits the use of MET-PET to institutions with onsite cyclotron. O-(2- [ 18 F]fluoroethyl)-L-tyrosine (FET) is labeled with 18 F (half-life, 120 minutes) and could be used much more broadly. This study compares the uptake of FET and MET in gliomas and metastases, as well as treatment-induced changes. Furthermore, it evaluates the gross tumor volume (GTV) of gliomas defined on PET and magnetic resonance imaging (MRI). Methods and Materials: We examined 42 patients with pretreated gliomas (29 patients) or brain metastases (13 patients) prospectively by FET- and MET-PET on the same day. Uptake of FET and MET was quantified by standardized uptake values. Imaging contrast was assessed by calculating lesion–to–gray matter ratios. Tumor extension was quantified by contouring GTV in 17 patients with brain gliomas. Gross tumor volume on PET was compared with GTV on MRI. Sensitivity and specificity of MET- and FET-PET for differentiation of viable tumor from benign changes were evaluated by comparing the PET result with histology or clinical follow-up. Results: There was a strong linear correlation between standardized uptake values calculated for both tracers in cortex and lesions: r = 0.78 (p = 0.001) and r = 0.84 (p 18 F]fluoroethyl)-L-tyrosine–PET and MET-PET provide comparable diagnostic information on gliomas and brain metastases. Like MET-PET, FET-PET can be used for differentiation of residual or recurrent tumor from treatment-related changes/pseudoprogression, as well as for delineation of gliomas.

Novel Quantum Dot Gate FETs and Nonvolatile Memories Using Lattice-Matched II-VI Gate Insulators

Science.gov (United States)

Jain, F. C.; Suarez, E.; Gogna, M.; Alamoody, F.; Butkiewicus, D.; Hohner, R.; Liaskas, T.; Karmakar, S.; Chan, P.-Y.; Miller, B.; Chandy, J.; Heller, E.

2009-08-01

This paper presents the successful use of ZnS/ZnMgS and other II-VI layers (lattice-matched or pseudomorphic) as high- k gate dielectrics in the fabrication of quantum dot (QD) gate Si field-effect transistors (FETs) and nonvolatile memory structures. Quantum dot gate FETs and nonvolatile memories have been fabricated in two basic configurations: (1) monodispersed cladded Ge nanocrystals (e.g., GeO x -cladded-Ge quantum dots) site-specifically self-assembled over the lattice-matched ZnMgS gate insulator in the channel region, and (2) ZnTe-ZnMgTe quantum dots formed by self-organization, using metalorganic chemical vapor-phase deposition (MOCVD), on ZnS-ZnMgS gate insulator layers grown epitaxially on Si substrates. Self-assembled GeO x -cladded Ge QD gate FETs, exhibiting three-state behavior, are also described. Preliminary results on InGaAs-on-InP FETs, using ZnMgSeTe/ZnSe gate insulator layers, are presented.

Study of the background noise in microwave GaAsFET devices

International Nuclear Information System (INIS)

Serrano S, A.

1984-01-01

One of the most important properties of the gallium arsenide field effect transistor is its low noise figure in the microwave frequency range (approx. 1 dB, 4 GHz). The applications of this device in components and systems in the high frequency range require analysis of background noise in terms of basic static and dynamic properties of the device. The purpose of this paper is to review GaAsFET noise properties; from this review, a description of precise noise measurement techniques is made. Some experimental and theoretical results on the minimum noise figure are shown for several GaAsFET devices. (author)

Dual-Input AND Gate From Single-Channel Thin-Film FET

Science.gov (United States)

Miranda, F. A.; Pinto, N. J.; Perez, R.; Mueller, C. H.

2008-01-01

A regio-regular poly(3-hexylthiophene) (RRP3HT) thin-film transistor having a split-gate architecture has been fabricated on a doped silicon/silicon nitride substrate and characterized. RRP3HT is a semiconducting polymer that has a carrier mobility and on/off ratio when used in a field effect transistor (FET) configuration. This commercially available polymer is very soluble in common organic solvents and is easily processed to form uniform thin films. The most important polymer-based device fabricated and studied is the FET, since it forms the building block in logic circuits and switches for active matrix (light-emitting-diode) (LED) displays, smart cards, and radio frequency identification (RFID) cards.

Large for gestational age and macrosomia in singletons born after frozen/thawed embryo transfer (FET) in assisted reproductive technology (ART)

DEFF Research Database (Denmark)

Berntsen, Sine; Pinborg, Anja

2018-01-01

Increase in success rates with frozen embryo transfer (FET) and reduced risk of ovarian hyperstimulation syndrome (OHSS) and multiple pregnancies has lead to a steady rise in FET. Further, FET is associated with lower risk of prematurity and low birth weight in singletons, when compared with fres...

Inverse scaling trends for charge-trapping-induced degradation of FinFETs performance

OpenAIRE

Amoroso, Salvatore Maria; Georgiev, Vihar P.; Gerrer, Louis; Towie, Ewan; Wang, Xingsheng; Riddet, Craig; Brown, Andrew Robert; Asenov, Asen

2014-01-01

In this paper, we investigate the impact of a single discrete charge trapped at the top oxide interface on the performance of scaled nMOS FinFET transistors. The charge-trapping-induced gate voltage shift is simulated as a function of the device scaling and for several regimes of conduction-from subthreshold to ON-state. Contrary to what is expected for planar MOSFETs, we show that the trap impact decreases with scaling down the FinFET size and the applied gate voltage. By comparing drift-dif...

FinFET centric variability-aware compact model extraction and generation technology supporting DTCO

OpenAIRE

Wang, Xingsheng; Cheng, Binjie; Reid, David; Pender, Andrew; Asenov, Plamen; Millar, Campbell; Asenov, Asen

2015-01-01

In this paper, we present a FinFET-focused variability-aware compact model (CM) extraction and generation technology supporting design-technology co-optimization. The 14-nm CMOS technology generation silicon on insulator FinFETs are used as testbed transistors to illustrate our approach. The TCAD simulations include a long-range process-induced variability using a design of experiment approach and short-range purely statistical variability (mismatch). The CM extraction supports a hierarchical...

Gene Expression Responses to FUS, EWS, and TAF15 Reduction and Stress Granule Sequestration Analyses Identifies FET-Protein Non-Redundant Functions

DEFF Research Database (Denmark)

Blechingberg, Jenny; Luo, Yonglun; Bolund, Lars

2012-01-01

The FET family of proteins is composed of FUS/TLS, EWS/EWSR1, and TAF15 and possesses RNA- and DNA-binding capacities. The FET-proteins are involved in transcriptional regulation and RNA processing, and FET-gene deregulation is associated with development of cancer and protein granule formations...... in amyotrophic lateral sclerosis, frontotemporal lobar degeneration, and trinucleotide repeat expansion diseases. We here describe a comparative characterization of FET-protein localization and gene regulatory functions. We show that FUS and TAF15 locate to cellular stress granules to a larger extend than EWS....... FET-proteins have no major importance for stress granule formation and cellular stress responses, indicating that FET-protein stress granule association most likely is a downstream response to cellular stress. Gene expression analyses showed that the cellular response towards FUS and TAF15 reduction...

Spectral analysis of linear relations and degenerate operator semigroups

International Nuclear Information System (INIS)

Baskakov, A G; Chernyshov, K I

2002-01-01

Several problems of the spectral theory of linear relations in Banach spaces are considered. Linear differential inclusions in a Banach space are studied. The construction of the phase space and solutions is carried out with the help of the spectral theory of linear relations, ergodic theorems, and degenerate operator semigroups

Transgenic fluorescent zebrafish Tg(fli1:EGFP)y¹ for the identification of vasotoxicity within the zFET.

Science.gov (United States)

Delov, Vera; Muth-Köhne, Elke; Schäfers, Christoph; Fenske, Martina

2014-05-01

The fish embryo toxicity test (FET) is currently one of the most advocated animal alternative tests in ecotoxicology. To date, the application of the FET with zebrafish (zFET) has focused on acute toxicity assessment, where only lethal morphological effects are accounted for. An application of the zFET beyond acute toxicity, however, necessitates the establishment of more refined and quantifiable toxicological endpoints. A valuable tool in this context is the use of gene expression-dependent fluorescent markers that can even be measured in vivo. We investigated the application of embryos of Tg(fli1:EGFP)(y1) for the identification of vasotoxic substances within the zFET. Tg(fli1:EGFP)(y1) fish express enhanced GFP in the entire vasculature under the control of the fli1 promoter, and thus enable the visualization of vascular defects in live zebrafish embryos. We assessed the fli1 driven EGFP-expression in the intersegmental blood vessels (ISVs) qualitatively and quantitatively, and found an exposure concentration related increase in vascular damage for chemicals like triclosan, cartap and genistein. The fluorescence endpoint ISV-length allowed an earlier and more sensitive detection of vasotoxins than the bright field assessment method. In combination with the standard bright field morphological effect assessment, an increase in significance and value of the zFET for a mechanism-specific toxicity evaluation was achieved. This study highlights the benefits of using transgenic zebrafish as convenient tools for identifying toxicity in vivo and to increase sensitivity and specificity of the zFET. Copyright © 2014 Elsevier B.V. All rights reserved.

pH and Protein Sensing with Functionalized Semiconducting Oxide Nanobelt FETs

Science.gov (United States)

Cheng, Yi; Yun, C. S.; Strouse, G. F.; Xiong, P.; Yang, R. S.; Wang, Z. L.

2008-03-01

We report solution pH sensing and selective protein detection with high-performance channel-limited field-effect transistors (FETs) based on single semiconducting oxide (ZnO and SnO2) nanobelts^1. The devices were integrated with PDMS microfluidic channels for analyte delivery and the source/drain contacts were passivated for in-solution sensing. pH sensing experiments were performed on FETs with functionalized and unmodified nanobelts. Functionalization of the nanobelts by APTES was found to greatly improve the pH sensitivity. The change in nanobelt conductance as functions of pH values at different gate voltages and ionic strengths showed high sensitivity and consistency. For the protein detection, we achieved highly selective biotinylation of the nanobelt channel with through APTES linkage. The specific binding of fluorescently-tagged streptavidin to the biotinylated nanobelt was verified by fluorescence microscopy; non-specific binding to the substrate was largely eliminated using PEG-silane passivation. The electrical responses of the biotinylated FETs to the streptavidin binding in PBS buffers of different pH values were systematically measured. The results will be presented and discussed. ^1Y. Cheng et al., Appl. Phys. Lett. 89, 093114 (2006). *Supported by NSF NIRT Grant ECS-0210332.

Out-of-Plane Strain Effects on Physically Flexible FinFET CMOS

KAUST Repository

Ghoneim, Mohamed T.

2016-05-18

We present a comprehensive electrical performance assessment of hafnium silicate (HfSiOₓ) high-κ dielectric and titanium-nitride (TiN) metal-gate-integrated FinFET-based complementary-metal-oxide-semiconductor (CMOS) on flexible silicon on insulator. The devices were fabricated using the state-of-the-art CMOS technology and then transformed into flexible form by using a CMOS-compatible maskless deep reactive-ion etching technique. Mechanical out-of-plane stresses (compressive and tensile) were applied along and across the transistor channel lengths through a bending range of 0.5-5 cm radii for n-type and p-type FinFETs. Electrical measurements were carried out before and after bending, and all the bending measurements were taken in the actual flexed (bent) state to avoid relaxation and stress recovery. Global stress from substrate bending affects the devices in different ways compared with the well-studied uniaxial/biaxial localized strain. The global stress is dependent on the type of channel charge carriers, the orientation of the bending axis, and the physical gate length of the device. We, therefore, outline useful insights on the design strategies of flexible FinFETs in future free-form electronic applications.

Extended-gate field-effect transistor (EG-FET) with molecularly imprinted polymer (MIP) film for selective inosine determination.

Science.gov (United States)

Iskierko, Zofia; Sosnowska, Marta; Sharma, Piyush Sindhu; Benincori, Tiziana; D'Souza, Francis; Kaminska, Izabela; Fronc, Krzysztof; Noworyta, Krzysztof

2015-12-15

A novel recognition unit of chemical sensor for selective determination of the inosine, renal disfunction biomarker, was devised and prepared. For that purpose, inosine-templated molecularly imprinted polymer (MIP) film was deposited on an extended-gate field-effect transistor (EG-FET) signal transducing unit. The MIP film was prepared by electrochemical polymerization of bis(bithiophene) derivatives bearing cytosine and boronic acid substituents, in the presence of the inosine template and a thiophene cross-linker. After MIP film deposition, the template was removed, and was confirmed by UV-visible spectroscopy. Subsequently, the film composition was characterized by spectroscopic techniques, and its morphology and thickness were determined by AFM. The finally MIP film-coated extended-gate field-effect transistor (EG-FET) was used for signal transduction. This combination is not widely studied in the literature, despite the fact that it allows for facile integration of electrodeposited MIP film with FET transducer. The linear dynamic concentration range of the chemosensor was 0.5-50 μM with inosine detectability of 0.62 μM. The obtained detectability compares well to the levels of the inosine in body fluids which are in the range 0-2.9 µM for patients with diagnosed diabetic nephropathy, gout or hyperuricemia, and can reach 25 µM in certain cases. The imprinting factor for inosine, determined from piezomicrogravimetric experiments with use of the MIP film-coated quartz crystal resonator, was found to be 5.5. Higher selectivity for inosine with respect to common interferents was also achieved with the present molecularly engineered sensing element. The obtained analytical parameters of the devised chemosensor allow for its use for practical sample measurements. Copyright © 2015 Elsevier B.V. All rights reserved.

Integrated boost IMRT with FET-PET-adapted local dose escalation in glioblastomas. Results of a prospective phase II study

International Nuclear Information System (INIS)

Piroth, M.D.; Pinkawa, M.; Holy, R.; Forschungszentrum Juelich GmbH

2012-01-01

Dose escalations above 60 Gy based on MRI have not led to prognostic benefits in glioblastoma patients yet. With positron emission tomography (PET) using [ 18 F]fluorethyl-L-tyrosine (FET), tumor coverage can be optimized with the option of regional dose escalation in the area of viable tumor tissue. In a prospective phase II study (January 2008 to December 2009), 22 patients (median age 55 years) received radiochemotherapy after surgery. The radiotherapy was performed as an MRI and FET-PET-based integrated-boost intensity-modulated radiotherapy (IMRT). The prescribed dose was 72 and 60 Gy (single dose 2.4 and 2.0 Gy, respectively) for the FET-PET- and MR-based PTV-FET (72 Gy) and PTV-MR (60 Gy) . FET-PET and MRI were performed routinely for follow-up. Quality of life and cognitive aspects were recorded by the EORTC-QLQ-C30/QLQ Brain20 and Mini-Mental Status Examination (MMSE), while the therapy-related toxicity was recorded using the CTC3.0 and RTOG scores. Median overall survival (OS) and disease-free survival (DFS) were 14.8 and 7.8 months, respectively. All local relapses were detected at least partly within the 95% dose volume of PTV-MR (60 Gy) . No relevant radiotherapy-related side effects were observed (excepted alopecia). In 2 patients, a pseudoprogression was observed in the MRI. Tumor progression could be excluded by FET-PET and was confirmed in further MRI and FET-PET imaging. No significant changes were observed in MMSE scores and in the EORTC QLQ-C30/QLQ-Brain20 questionnaires. Our dose escalation concept with a total dose of 72 Gy, based on FET-PET, did not lead to a survival benefit. Acute and late toxicity were not increased, compared with historical controls and published dose-escalation studies. (orig.)

Integrated boost IMRT with FET-PET-adapted local dose escalation in glioblastomas. Results of a prospective phase II study

Energy Technology Data Exchange (ETDEWEB)

Piroth, M.D.; Pinkawa, M.; Holy, R. [RWTH Aachen University Hospital (Germany). Dept. of Radiation Oncology; Forschungszentrum Juelich GmbH (DE). Juelich-Aachen Research Alliance (JARA) - Section JARA-Brain] (and others)

2012-04-15

Dose escalations above 60 Gy based on MRI have not led to prognostic benefits in glioblastoma patients yet. With positron emission tomography (PET) using [{sup 18}F]fluorethyl-L-tyrosine (FET), tumor coverage can be optimized with the option of regional dose escalation in the area of viable tumor tissue. In a prospective phase II study (January 2008 to December 2009), 22 patients (median age 55 years) received radiochemotherapy after surgery. The radiotherapy was performed as an MRI and FET-PET-based integrated-boost intensity-modulated radiotherapy (IMRT). The prescribed dose was 72 and 60 Gy (single dose 2.4 and 2.0 Gy, respectively) for the FET-PET- and MR-based PTV-FET{sub (72 Gy)} and PTV-MR{sub (60 Gy)}. FET-PET and MRI were performed routinely for follow-up. Quality of life and cognitive aspects were recorded by the EORTC-QLQ-C30/QLQ Brain20 and Mini-Mental Status Examination (MMSE), while the therapy-related toxicity was recorded using the CTC3.0 and RTOG scores. Median overall survival (OS) and disease-free survival (DFS) were 14.8 and 7.8 months, respectively. All local relapses were detected at least partly within the 95% dose volume of PTV-MR{sub (60 Gy)}. No relevant radiotherapy-related side effects were observed (excepted alopecia). In 2 patients, a pseudoprogression was observed in the MRI. Tumor progression could be excluded by FET-PET and was confirmed in further MRI and FET-PET imaging. No significant changes were observed in MMSE scores and in the EORTC QLQ-C30/QLQ-Brain20 questionnaires. Our dose escalation concept with a total dose of 72 Gy, based on FET-PET, did not lead to a survival benefit. Acute and late toxicity were not increased, compared with historical controls and published dose-escalation studies. (orig.)

18F-FET and 18F-FCH uptake in human glioblastoma T98G cell lines

International Nuclear Information System (INIS)

Persico, Marco Giovanni; Buroni, Federica Eleonora; Pasi, Francesca; Lodola, Lorenzo; Aprile, Carlo; Nano, Rosanna; Hodolic, Marina

2016-01-01

Despite complex treatment of surgery, radiotherapy and chemotherapy, high grade gliomas often recur. Differentiation between post-treatment changes and recurrence is difficult. 18 F-methyl-choline ( 18 F-FCH) is frequently used in staging and detection of recurrent prostate cancer disease as well as some brain tumours; however accumulation in inflammatory tissue limits its specificity. The 18 F-ethyl-tyrosine ( 18 F-FET) shows a specific uptake in malignant cells, resulting from increased expression of amino acid transporters or diffusing through the disrupted blood-brain barrier. 18 F-FET exhibits lower uptake in machrophages and other inflammatory cells. Aim of this study was to evaluate 18 F-FCH and 18 F-FET uptake by human glioblastoma T98G cells. Human glioblastoma T98G or human dermal fibroblasts cells, seeded at a density to obtain 2 × 10 5 cells per flask when radioactive tracers were administered, grew adherent to the plastic surface at 37°C in 5% CO 2 in complete medium. Equimolar amounts of radiopharmaceuticals were added to cells for different incubation times (20 to 120 minutes) for 18 F-FCH and 18 F-FET respectively. The cellular radiotracer uptake was determined with a gamma counter. All experiments were carried out in duplicate and repeated three times. The uptake measurements are expressed as the percentage of the administered dose of tracer per 2 × 10 5 cells. Data (expressed as mean values of % uptake of radiopharmaceuticals) were compared using parametric or non-parametric tests as appropriate. Differences were regarded as statistically significant when p<0.05. A significant uptake of 18 F-FCH was seen in T98G cells at 60, 90 and 120 minutes. The percentage uptake of 18 F-FET in comparison to 18 F-FCH was lower by a factor of more than 3, with different kinetic curves. 18 F-FET showed a more rapid initial uptake up to 40 minutes and 18 F-FCH showed a progressive rise reaching a maximum after 90 minutes. 18 F-FCH and 18 F-FET are candidates

Advancing Life Projects: South African Students Explain Why They Come to FET Colleges

Directory of Open Access Journals (Sweden)

Lesley Powell

2014-10-01

Full Text Available Vocational Education and Training (VET policy in South Africa is based on a narrow set of assumptions regarding the identity of learners and the reasons that they are in public further education and training (FET colleges. These assumptions reflect an international orthodoxy about the centrality of employability that is located within what Giddens (1994 has described as 'productivism', a view that reduces life to the economic sphere. Through exploring the stories of a group of South African public FET college learners' regarding their reasons for choosing FET colleges, this paper shows that VET is valued by these students for a range of reasons. These include preparation for the world of work, but also a desire to improve their ability to contribute to their communities and families; raise their self-esteem; and expand their future life possibilities. Thus, the paper advances the largely hitherto theoretical critique of productivist VET accounts by offering empirical evidence of counter-narratives.

Tuning the hysteresis voltage in 2D multilayer MoS{sub 2} FETs

Energy Technology Data Exchange (ETDEWEB)

Jiang, Jie, E-mail: jiangjie@csu.edu.cn; Zheng, Zhouming; Guo, Junjie

2016-10-01

The hysteresis tuning is of great significance before the two-dimensional (2D) molybdenum disulfide (MoS{sub 2}) field-effect transistors (FETs) can be practically used in the next-generation nanoelectronic devices. In this paper, a simple and effective annealing method was developed to tune the hysteresis voltage in 2D MoS{sub 2} transistors. It was found that high temperature (175 °C) annealing in air could increase the hysteresis voltage from 8.0 V (original device) to 28.4 V, while a next vacuum annealing would reduce the hysteresis voltage to be only 2.0 V. An energyband diagram model based on electron trapping/detrapping due to oxygen adsorption is proposed to understand the hysteresis mechanism in multilayer MoS{sub 2} FET. This simple method for tuning the hysteresis voltage of MoS{sub 2} FET can make a significant step toward 2D nanoelectronic device applications.

Analytical modeling of trilayer graphene nanoribbon Schottky-barrier FET for high-speed switching applications.

Science.gov (United States)

Rahmani, Meisam; Ahmadi, Mohammad Taghi; Abadi, Hediyeh Karimi Feiz; Saeidmanesh, Mehdi; Akbari, Elnaz; Ismail, Razali

2013-01-30

Recent development of trilayer graphene nanoribbon Schottky-barrier field-effect transistors (FETs) will be governed by transistor electrostatics and quantum effects that impose scaling limits like those of Si metal-oxide-semiconductor field-effect transistors. The current-voltage characteristic of a Schottky-barrier FET has been studied as a function of physical parameters such as effective mass, graphene nanoribbon length, gate insulator thickness, and electrical parameters such as Schottky barrier height and applied bias voltage. In this paper, the scaling behaviors of a Schottky-barrier FET using trilayer graphene nanoribbon are studied and analytically modeled. A novel analytical method is also presented for describing a switch in a Schottky-contact double-gate trilayer graphene nanoribbon FET. In the proposed model, different stacking arrangements of trilayer graphene nanoribbon are assumed as metal and semiconductor contacts to form a Schottky transistor. Based on this assumption, an analytical model and numerical solution of the junction current-voltage are presented in which the applied bias voltage and channel length dependence characteristics are highlighted. The model is then compared with other types of transistors. The developed model can assist in comprehending experiments involving graphene nanoribbon Schottky-barrier FETs. It is demonstrated that the proposed structure exhibits negligible short-channel effects, an improved on-current, realistic threshold voltage, and opposite subthreshold slope and meets the International Technology Roadmap for Semiconductors near-term guidelines. Finally, the results showed that there is a fast transient between on-off states. In other words, the suggested model can be used as a high-speed switch where the value of subthreshold slope is small and thus leads to less power consumption.

Trapping Effects in GaN and SiC Microwave FETs

National Research Council Canada - National Science Library

Binari, Steven C; Klein, P. B; Kazior, Thomas E

2002-01-01

...). This is particularly true for the wide bandgap devices. In this paper, we review the various trapping phenomena observed in SiC- and GaN-based FETs that contribute to compromised power performance...

Photoconductivity, pH Sensitivity, Noise, and Channel Length Effects in Si Nanowire FET Sensors

Science.gov (United States)

Gasparyan, Ferdinand; Zadorozhnyi, Ihor; Khondkaryan, Hrant; Arakelyan, Armen; Vitusevich, Svetlana

2018-03-01

Silicon nanowire (NW) field-effect transistor (FET) sensors of various lengths were fabricated. Transport properties of Si NW FET sensors were investigated involving noise spectroscopy and current-voltage (I-V) characterization. The static I-V dependencies demonstrate the high quality of fabricated silicon FETs without leakage current. Transport and noise properties of NW FET structures were investigated under different light illumination conditions, as well as in sensor configuration in an aqueous solution with different pH values. Furthermore, we studied channel length effects on the photoconductivity, noise, and pH sensitivity. The magnitude of the channel current is approximately inversely proportional to the length of the current channel, and the pH sensitivity increases with the increase of channel length approaching the Nernst limit value of 59.5 mV/pH. We demonstrate that dominant 1/f-noise can be screened by the generation-recombination plateau at certain pH of the solution or external optical excitation. The characteristic frequency of the generation-recombination noise component decreases with increasing of illumination power. Moreover, it is shown that the measured value of the slope of 1/f-noise spectral density dependence on the current channel length is 2.7 which is close to the theoretically predicted value of 3.

New insights on SOI Tunnel FETs with low-temperature process flow for CoolCube™ integration

Science.gov (United States)

Diaz Llorente, C.; Le Royer, C.; Batude, P.; Fenouillet-Beranger, C.; Martinie, S.; Lu, C.-M. V.; Allain, F.; Colinge, J.-P.; Cristoloveanu, S.; Ghibaudo, G.; Vinet, M.

2018-06-01

This paper reports the fabrication and electrical characterization of planar SOI Tunnel FETs (TFETs) made using a Low-Temperature (LT) process designed for 3D sequential integration. These proof-of-concept TFETs feature junctions obtained by Solid Phase Epitaxy Regrowth (SPER). Their electrical behavior is analyzed and compared to reference samples (regular process using High-Temperature junction formation, HT). Dual ID-VDS measurements verify that the TFET structures present Band-to-Band tunnelling (BTBT) carrier injection and not Schottky Barrier tunnelling. P-mode operating LT TFETs deliver an ON state current similar to that of the HT reference, opening the door towards optimized devices operating with very low threshold voltage VTH and low supply voltage VDD.

Primer on theory and operation of linear accelerators in radiation therapy

International Nuclear Information System (INIS)

Karzmark, C.J.; Morton, R.J.

1981-12-01

This primer is part of an educational package that also includes a series of 3 videotapes entitled Theory and Operation of Linear Accelerators in Radiation Therapy, Parts I, II, and III. This publication provides an overview of the components of the linear accelerator and how they function and interrelate. The auxiliary systems necessary to maintain the operation of the linear accelerator are also described

Precursor effect on the property and catalytic behavior of Fe-TS-1 in butadiene epoxidation

Science.gov (United States)

Wu, Mei; Zhao, Huahua; Yang, Jian; Zhao, Jun; Song, Huanling; Chou, Lingjun

2017-11-01

The effect of iron precursor on the property and catalytic behavior of iron modified titanium silicalite molecular sieve (Fe-TS-1) catalysts in butadiene selective epoxidation has been studied. Three Fe-TS-1 catalysts were prepared, using iron nitrate, iron chloride and iron sulfate as precursors, which played an important role in adjusting the textural properties and chemical states of TS-1. Of the prepared Fe-TS-1 catalysts, those modified by iron nitrate (FN-TS-1) exhibited a significant enhanced performance in butadiene selective epoxidation compared to those derived from iron sulfate (FS-TS-1) or iron chloride (FC-TS-1) precursors. To obtain a deep understanding of their structure-performance relationship, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Temperature programmed desorption of NH3 (NH3-TPD), Diffuse reflectance UV-Vis spectra (DR UV-Vis), Fourier transformed infrared spectra (FT-IR) and thermal gravimetric analysis (TGA) were conducted to characterize Fe-TS-1 catalysts. Experimental results indicated that textural structures and acid sites of modified catalysts as well as the type of Fe species influenced by the precursors were all responsible for the activity and product distribution.

Utilizing 18F-fluoroethyltyrosine (FET) positron emission tomography (PET) to define suspected nonenhancing tumor for radiation therapy planning of glioblastoma.

Science.gov (United States)

Hayes, Aimee R; Jayamanne, Dasantha; Hsiao, Edward; Schembri, Geoffrey P; Bailey, Dale L; Roach, Paul J; Khasraw, Mustafa; Newey, Allison; Wheeler, Helen R; Back, Michael

2018-01-31

The authors sought to evaluate the impact of 18F-fluoroethyltyrosine (FET) positron emission tomography (PET) on radiation therapy planning for patients diagnosed with glioblastoma (GBM) and the presence of suspected nonenhancing tumors compared with standard magnetic resonance imaging (MRI). Patients with GBM and contrast-enhanced MRI scans showing regions suspicious of nonenhancing tumor underwent postoperative FET-PET before commencing radiation therapy. Two clinical target volumes (CTVs) were created using pre- and postoperative MRI: MRI fluid-attenuated inversion recovery (FLAIR) sequences (CTV FLAIR ) and MRI contrast sequences with an expansion on the surgical cavity (CTV Sx ). FET-PET was used to create biological tumor volumes (BTVs) by encompassing FET-avid regions, forming BTV FLAIR and BTV Sx . Volumetric analyses were conducted between CTVs and respective BTVs using Wilcoxon signed-rank tests. The volume increase with addition of FET was analyzed with respect to BTV FLAIR and BTV Sx . Presence of focal gadolinium contrast enhancement within previously nonenhancing tumor or within the FET-avid region was noted on MRI scans at 1 and 3 months after radiation therapy. Twenty-six patients were identified retrospectively from our database, of whom 24 had demonstrable FET uptake. The median CTV FLAIR , CTV Sx , BTV FLAIR , and BTV Sx were 57.1 mL (range, 1.1-217.4), 83.6 mL (range, 27.2-275.8), 62.8 mL (range, 1.1-307.3), and 94.7 mL (range, 27.2-285.5), respectively. When FET-PET was used, there was a mean increase in volume of 26.8% from CTV FLAIR to BTV FLAIR and 20.6% from CTV Sx to BTV Sx . A statistically significant difference was noted on Wilcoxon signed-rank test when assessing volumetric change between CTV FLAIR and BTV FLAIR (P Wilcoxon signed-rank tests. FET-PET may help improve delineation of GBM in cases with a suspected nonenhancing component and reduce the risk of potential geographical miss. Copyright © 2018 American Society for Radiation

Impact of negative capacitance effect on Germanium Double Gate pFET for enhanced immunity to interface trap charges

Science.gov (United States)

Bansal, Monika; Kaur, Harsupreet

2018-05-01

In this work, a comprehensive drain current model has been developed for long channel Negative Capacitance Germanium Double Gate p-type Field Effect Transistor (NCGe-DG-pFET) by using 1-D Poisson's equation and Landau-Khalatnikov equation. The model takes into account interface trap charges and by using the derived model various parameters such as surface potential, gain, gate capacitance, subthreshold swing, drain current, transconductance, output conductance and Ion/Ioff ratio have been obtained and it is demonstrated that by incorporating ferroelectric material as gate insulator with Ge-channel, subthreshold swing values less than 60 mV/dec can be achieved along with improved gate controllability and current drivability. Further, to critically analyze the advantages offered by NCGe-DG-pFET, a detailed comparison has been done with Germanium Double Gate p-type Field Effect Transistor (Ge-DG-pFET) and it is shown that NCGe-DG-pFET exhibits high gain, enhanced transport efficiency in channel, very less or negligible degradation in device characteristics due to interface trap charges as compared to Ge-DG-pFET. The analytical results so obtained show good agreement with simulated results obtained from Silvaco ATLAS TCAD tool.

Evaluation of radiation tolerance of FETs used for Astro-E2 hard X-ray detector (HXD-II)

International Nuclear Information System (INIS)

Itoh, Takeshi; Niko, Hisako; Kokubun, Motohide; Makishima, Kazuo; Kawaharada, Madoka; Takahashi, Isao; Miyasaka, Hiromasa

2005-01-01

We evaluated the radiation tolerance of three types of metal-can MOS Field Effect Transistors (FETs). They are candidates for flight electronics of the Hard X-ray Detector (HXD-II) experiment which is onboard the cosmic X-ray satellite Astro-E2 scheduled for launch in 2005. We irradiated FETs with a Co60γ-ray source under several different experimental conditions, and measured changes in their I-V characteristic curves. After a 10krad irradiation during which the gate voltage is set at 0V, all types showed a decrease in the switching voltage by ∼0.2-0.4V. In addition, the gate conductance increased under some irradiation conditions. These experimental results may be explained in terms of trapped charges and boundary levels in the oxide layer beneath the gate electrode. We have confirmed that at least two types of FETs can be used in our satellite-borne experiment, one as relay-driving FETs and the other in TTL-ECL conversion circuits

Line-edge roughness induced single event transient variation in SOI FinFETs

International Nuclear Information System (INIS)

Wu Weikang; An Xia; Jiang Xiaobo; Chen Yehua; Liu Jingjing; Zhang Xing; Huang Ru

2015-01-01

The impact of process induced variation on the response of SOI FinFET to heavy ion irradiation is studied through 3-D TCAD simulation for the first time. When FinFET biased at OFF state configuration (V gs = 0, V ds = V dd ) is struck by a heavy ion, the drain collects ionizing charges under the electric field and a current pulse (single event transient, SET) is consequently formed. The results reveal that with the presence of line-edge roughness (LER), which is one of the major variation sources in nano-scale FinFETs, the device-to-device variation in terms of SET is observed. In this study, three types of LER are considered: type A has symmetric fin edges, type B has irrelevant fin edges and type C has parallel fin edges. The results show that type A devices have the largest SET variation while type C devices have the smallest variation. Further, the impact of the two main LER parameters, correlation length and root mean square amplitude, on SET variation is discussed as well. The results indicate that variation may be a concern in radiation effects with the down scaling of feature size. (paper)

Wavy channel transistor for area efficient high performance operation

KAUST Repository

Fahad, Hossain M.

2013-04-05

We report a wavy channel FinFET like transistor where the channel is wavy to increase its width without any area penalty and thereby increasing its drive current. Through simulation and experiments, we show the effectiveness of such device architecture is capable of high performance operation compared to conventional FinFETs with comparatively higher area efficiency and lower chip latency as well as lower power consumption.

VHDL-AMS Simulation Framework for Molecular-FET Device-to-Circuit Modeling and Design

Directory of Open Access Journals (Sweden)

Mariagrazia Graziano

2018-01-01

Full Text Available We concentrate on Molecular-FET as a device and present a new modular framework based on VHDL-AMS. We have implemented different Molecular-FET models within the framework. The framework allows comparison between the models in terms of the capability to calculate accurate I-V characteristics. It also provides the option to analyze the impact of Molecular-FET and its implementation in the circuit with the extension of its use in an architecture based on the crossbar configuration. This analysis evidences the effect of choices of technological parameters, the ability of models to capture the impact of physical quantities, and the importance of considering defects at circuit fabrication level. The comparison tackles the computational efforts of different models and techniques and discusses the trade-off between accuracy and performance as a function of the circuit analysis final requirements. We prove this methodology using three different models and test them on a 16-bit tree adder included in Pentium 4 that, to the best of our knowledge, is the biggest circuits based on molecular device ever designed and analyzed.

Operator approach to linear control systems

CERN Document Server

Cheremensky, A

1996-01-01

Within the framework of the optimization problem for linear control systems with quadratic performance index (LQP), the operator approach allows the construction of a systems theory including a number of particular infinite-dimensional optimization problems with hardly visible concreteness. This approach yields interesting interpretations of these problems and more effective feedback design methods. This book is unique in its emphasis on developing methods for solving a sufficiently general LQP. Although this is complex material, the theory developed here is built on transparent and relatively simple principles, and readers with less experience in the field of operator theory will find enough material to give them a good overview of the current state of LQP theory and its applications. Audience: Graduate students and researchers in the fields of mathematical systems theory, operator theory, cybernetics, and control systems.

Exploring the Feasibility cold-FET Calibration Standards to Improve Radiometric Measurements

Data.gov (United States)

National Aeronautics and Space Administration — This work seeks to further the development of the cold-FET calibration technology designed f next generation multi-band microwave instruments for space-based remote...

Electronic Biosensing with Functionalized rGO FETs

Directory of Open Access Journals (Sweden)

Ciril Reiner-Rozman

2016-04-01

Full Text Available In the following we give a short summary of examples for biosensor concepts in areas in which reduced graphene oxide-based electronic devices can be developed into new classes of biosensors, which are highly sensitive, label-free, disposable and cheap, with electronic signals that are easy to analyze and interpret, suitable for multiplexed operation and for remote control, compatible with NFC technology, etc., and in many cases a clear and promising alternative to optical sensors. The presented areas concern sensing challenges in medical diagnostics with an example for detecting general antibody-antigen interactions, for the monitoring of toxins and pathogens in food and feed stuff, exemplified by the detection of aflatoxins, and the area of smell sensors, which are certainly the most exciting development as there are very few existing examples in which the typically small and hydrophobic odorant molecules can be detected by other means. The example given here concerns the recording of a honey flavor (and a cancer marker for neuroblastoma, homovanillic acid, by the odorant binding protein OBP 14 from the honey bee, immobilized on the reduced graphene oxide gate of an FET sensor.

Theory of linear operators in Hilbert space

CERN Document Server

Akhiezer, N I

1993-01-01

This classic textbook by two mathematicians from the USSR's prestigious Kharkov Mathematics Institute introduces linear operators in Hilbert space, and presents in detail the geometry of Hilbert space and the spectral theory of unitary and self-adjoint operators. It is directed to students at graduate and advanced undergraduate levels, but because of the exceptional clarity of its theoretical presentation and the inclusion of results obtained by Soviet mathematicians, it should prove invaluable for every mathematician and physicist. 1961, 1963 edition.

Pu-Erh Tea Extract Induces the Degradation of FET Family Proteins Involved in the Pathogenesis of Amyotrophic Lateral Sclerosis

Directory of Open Access Journals (Sweden)

Yang Yu

2014-01-01

Full Text Available FET family proteins consist of fused in sarcoma/translocated in liposarcoma (FUS/TLS, Ewing's sarcoma (EWS, and TATA-binding protein-associated factor 15 (TAF15. Mutations in the copper/zinc superoxide dismutase (SOD1, TAR DNA-binding protein 43 (TDP-43, and FET family proteins are associated with the development of amyotrophic lateral sclerosis (ALS, a fatal neurodegenerative disease. There is currently no cure for this disease and few effective treatments are available. Epidemiological studies indicate that the consumption of tea is associated with a reduced risk of developing neurodegenerative diseases. The results of this study revealed that components of a pu-erh tea extract (PTE interacted with FET family proteins but not with TDP-43 or SOD1. PTE induced the degradation of FET family proteins but had no effects on TDP-43 or SOD1. The most frequently occurring ALS-linked FUS/TLS mutant protein, R521C FUS/TLS, was also degraded in the presence of PTE. Furthermore, ammonium chloride, a lysosome inhibitor, but not lactacystin, a proteasome inhibitor, reduced the degradation of FUS/TLS protein by PTE. PTE significantly reduced the incorporation of R521C FUS/TLS into stress granules under stress conditions. These findings suggest that PTE may have beneficial health effects, including preventing the onset of FET family protein-associated neurodegenerative diseases and delaying the progression of ALS by inhibiting the cytoplasmic aggregation of FET family proteins.

Linear operators in Clifford algebras

International Nuclear Information System (INIS)

Laoues, M.

1991-01-01

We consider the real vector space structure of the algebra of linear endomorphisms of a finite-dimensional real Clifford algebra (2, 4, 5, 6, 7, 8). A basis of that space is constructed in terms of the operators M eI,eJ defined by x→e I .x.e J , where the e I are the generators of the Clifford algebra and I is a multi-index (3, 7). In particular, it is shown that the family (M eI,eJ ) is exactly a basis in the even case. (orig.)

Analog circuits using FinFETs: benefits in speed-accuracy-power trade-off and simulation of parasitic effects

Directory of Open Access Journals (Sweden)

M. Fulde

2007-06-01

Full Text Available Multi-gate FET, e.g. FinFET devices are the most promising contenders to replace bulk FETs in sub-45 nm CMOS technologies due to their improved sub threshold and short channel behavior, associated with low leakage currents. The introduction of novel gate stack materials (e.g. metal gate, high-k dielectric and modified device architectures (e.g. fully depleted, undoped fins affect the analog device properties significantly. First measurements indicate enhanced intrinsic gain (g_m/g_DS and promising matching behavior of FinFETs. The resulting benefits regarding the speed-accuracy-power trade-off in analog circuit design will be shown in this work. Additionally novel device specific effects will be discussed. The hysteresis effect caused by charge trapping in high-k dielectrics or self-heating due to the high thermal resistor of the BOX isolation are possible challenges for analog design in these emerging technologies. To gain an early assessment of the impact of such parasitic effects SPICE based models are derived and applied in analog building blocks.

The Use of Longitudinal 18F-FET MicroPET Imaging to Evaluate Response to Irinotecan in Orthotopic Human Glioblastoma Multiforme Xenografts

DEFF Research Database (Denmark)

Nedergaard, Mette K; Kristoffersen, Karina; Michaelsen, Signe R

2014-01-01

was compared. METHODS: Human GBM cells were injected orthotopically in nude mice and 18F-FET uptake was followed by weekly MicroPET/CT. When tumor take was observed, mice were treated with CPT-11 or saline weekly. After two weeks of treatment the brain tumors were isolated and quantitative polymerase chain......OBJECTIVES: Brain tumor imaging is challenging. Although 18F-FET PET is widely used in the clinic, the value of 18F-FET MicroPET to evaluate brain tumors in xenograft has not been assessed to date. The aim of this study therefore was to evaluate the performance of in vivo 18F-FET Micro......, a 1.6 fold higher expression of LAT1 and a 23 fold higher expression of LAT2 were observed in patient specimens compared to xenografts. CONCLUSIONS: 18F-FET MicroPET can be used to detect a treatment response to CPT-11 in GBM xenografts. The strong negative correlation between SUV max T/B ratio...

Simultaneous evaluation of brain tumour metabolism, structure and blood volume using [{sup 18}F]-fluoroethyltyrosine (FET) PET/MRI: feasibility, agreement and initial experience

Energy Technology Data Exchange (ETDEWEB)

Henriksen, Otto M.; Hansen, Adam E.; Law, Ian [Copenhagen University Hospital Rigshospitalet Blegdamsvej, Department of Clinical Physiology Nuclear Medicine and PET, Copenhagen (Denmark); Larsen, Vibeke A. [Copenhagen University Hospital Rigshospitalet Blegdamsvej, Department of Radiology, Copenhagen (Denmark); Muhic, Aida; Poulsen, Hans S. [Copenhagen University Hospital Rigshospitalet Blegdamsvej, Department of Oncology, Copenhagen (Denmark); Larsson, Henrik B.W. [Copenhagen University Hospital Rigshospitalet Glostrup, Functional Imaging Unit, Department of Clinical Physiology Nuclear Medicine and PET, Glostrup (Denmark)

2016-01-15

Both [{sup 18}F]-fluoroethyltyrosine (FET) PET and blood volume (BV) MRI supplement routine T1-weighted contrast-enhanced MRI in gliomas, but whether the two modalities provide identical or complementary information is unresolved. The aims of the study were to investigate the feasibility of simultaneous structural MRI, BV MRI and FET PET of gliomas using an integrated PET/MRI scanner and to assess the spatial and quantitative agreement in tumour imaging between BV MRI and FET PET. A total of 32 glioma patients underwent a 20-min static simultaneous PET/MRI acquisition on a Siemens mMR system 20 min after injection of 200 MBq FET. The MRI protocol included standard structural MRI and dynamic susceptibility contrast (DSC) imaging for BV measurements. Maximal relative tumour FET uptake (TBR{sub max}) and BV (rBV{sub max}), and Dice coefficients were calculated to assess the quantitative and spatial congruence in the tumour volumes determined by FET PET, BV MRI and contrast-enhanced MRI. FET volume and TBR{sub max} were higher in BV-positive than in BV-negative scans, and both VOL{sub BV} and rBV{sub max} were higher in FET-positive than in FET-negative scans. TBR{sub max} and rBV{sub max} were positively correlated (R{sup 2} = 0.59, p < 0.001). FET and BV positivity were in agreement in only 26 of the 32 patients and in 42 of 63 lesions, and spatial congruence in the tumour volumes as assessed by the Dice coefficients was generally poor with median Dice coefficients exceeding 0.1 in less than half the patients positive on at least one modality for any pair of modalities. In 56 % of the patients susceptibility artefacts in DSC BV maps overlapped the tumour on MRI. The study demonstrated that although tumour volumes determined by BV MRI and FET PET were quantitatively correlated, their spatial congruence in a mixed population of treated glioma patients was generally poor, and the modalities did not provide the same information in this population of patients. Combined

Calculation of the exponential function of linear idempotent operators

International Nuclear Information System (INIS)

Chavoya-Aceves, O.; Luna, H.M.

1989-01-01

We give a method to calculate the exponential EXP[A r ] where A is a linear operator which satisfies the reaction A n =I, n is an integer and I is the identity operator. The method is generalised to operators such that A n +1=A and is applied to obtain some Lorentz transformations which generalise the notion of 'boost'. (Author)

The ZnO-FET Biosensor for Cardiac Troponin I

Science.gov (United States)

Fathil, M. F. M.; Arshad, M. K. Md; Nuzaihan, M. N. M.; Gopinath, Subash C. B.; Ruslinda, A. R.; Hashim, U.

2018-03-01

This paper investigates the influence of substrate-gate coupling on the ZnO-FET biosensor’s sensitivity for detection of cardiac troponin I (cTnI), a ‘gold standard’ biomarker for acute myocardial infarction (AMI). The FET-based device with introduction of substrate-gate coupling on p-type silicon-on-insulator (SOI) substrate is fabricated using conventional lithography processes. An n-type zinc oxide (ZnO) thin film deposited via electron-beam evaporator is used as transducer for bridging the source and drain regions. Surface modifications via functionalization with 3-aminopropyltriethoxysilane (APTES) and glutaraldehyde (GA) as chemical linkers, followed by immobilization of cTnI monoclonal antibody (MAb-cTnI) as bio-receptor on the ZnO thin film allow different concentration of cTnI detection with high selectivity. The device’s sensitivity increases up to 9 %·(g/ml)-1 with the increase of the substrate-gate voltage (VSG) up to -10 V at very low limit of detection (LOD) down to 1.6 fg/ml.

Integrated Balanced FETs for Broadband Millimeter Wave Amplifiers.

Science.gov (United States)

1981-08-01

F. Podell , "A Functional GaAs FET Noise Model," IEEE Trans. ED- 28, 511 (1981). 4. H. Fukui, "Optimal Noise Figure of Microwave GaAs MESFETs," IEEE...Nm = rl Cs2 Req Cgs2 eq rll gs eq) where gmLs rl=r + ms - real part ofZlCgs m d r r req =4kTBgm2 Podell has found empirically for one-micron gate

Packaging Effects on RadFET Sensors for High Energy Physics Experiments

CERN Document Server

Mekki, J; Glaser, M; Guatelli, S; Moll, M; Pia, M G; Ravotti, F

2009-01-01

RadFETs in customized chip carrier packages are installed in the LHC Experiments as radiation monitors. The package influence on the dose measurement in the complex LHC radiation environment is evaluated using Geant4 simulations and experimental data.

Ideal Convergence of k-Positive Linear Operators

Directory of Open Access Journals (Sweden)

Akif Gadjiev

2012-01-01

Full Text Available We study some ideal convergence results of k-positive linear operators defined on an appropriate subspace of the space of all analytic functions on a bounded simply connected domain in the complex plane. We also show that our approximation results with respect to ideal convergence are more general than the classical ones.

Linearization of non-commuting operators in the partition function

International Nuclear Information System (INIS)

Ahmed, M.

1983-06-01

A generalization of the Stratonovich-Hubbard scheme for evaluating the grand canonical partition function is given. The scheme involves linearization of products of non-commuting operators using the functional integral method. The non-commutivity of the operators leads to an additional term which can be absorbed in the single-particle Hamiltonian. (author)

Adapting MR-BrainPET scans for comparison with conventional PET: experiences with dynamic FET-PET in brain tumours

Energy Technology Data Exchange (ETDEWEB)

Lohmann, Philipp; Herzog, Hans; Kops, Elena Rota; Stoffels, Gabriele; Filss, Christian [Institute of Neuroscience and Medicine (INM-3,-4,-5), Forschungszentrum Juelich, Juelich (Germany); Galldiks, Norbert [Institute of Neuroscience and Medicine (INM-3,-4,-5), Forschungszentrum Juelich, Juelich (Germany); Department of Neurology, University of Cologne, Cologne (Germany); Coenen, Heinrich H; Shah, N Jon; Langen, Karl-Josef [Institute of Neuroscience and Medicine (INM-3,-4,-5), Forschungszentrum Juelich, Juelich (Germany)

2014-07-29

Imaging results from subsequent measurements (preclinical 3T MR-BrainPET, HR+) are compared. O-(2-[{sup 18}F]fluoroethyl)-L-tyrosine (FET) may exhibit non-uniform tracer uptake in gliomas. The aim was to analyse and adapt the physical properties of the scanners and study variations of biological tumour volume (BTV) in early and late FET-PET.

Spectrum of the linearized operator for the Ginzburg-Landau equation

Directory of Open Access Journals (Sweden)

Tai-Chia Lin

2000-06-01

Full Text Available We study the spectrum of the linearized operator for the Ginzburg-Landau equation about a symmetric vortex solution with degree one. We show that the smallest eigenvalue of the linearized operator has multiplicity two, and then we describe its behavior as a small parameter approaches zero. We also find a positive lower bound for all the other eigenvalues, and find estimates of the first eigenfunction. Then using these results, we give partial results on the dynamics of vortices in the nonlinear heat and Schrodinger equations.

On the reduction of the degree of linear differential operators

International Nuclear Information System (INIS)

Bobieński, Marcin; Gavrilov, Lubomir

2011-01-01

Let L be a linear differential operator with coefficients in some differential field k of characteristic zero with algebraically closed field of constants. Let k a be the algebraic closure of k. For a solution y 0 , Ly 0 = 0, we determine the linear differential operator of minimal degree L-tilde and coefficients in k a , such that L-tilde y 0 =0. This result is then applied to some Picard–Fuchs equations which appear in the study of perturbations of plane polynomial vector fields of Lotka–Volterra type

Antigen sequence typing of outer membrane protein (fetA gene of Neisseria meningitidis serogroup A from Delhi & adjoining areas

Directory of Open Access Journals (Sweden)

S Dwivedi

2014-01-01

Full Text Available Background & objectives: Meningitis caused by Neisseria meningitidis is a fatal disease. Meningococcal meningitis is an endemic disease in Delhi and irregular pattern of outbreaks has been reported in India. All these outbreaks were associated with serogroup A. Detailed molecular characterization of N. meningitidis is required for the management of this fatal disease. In this study, we characterized antigenic diversity of surface exposed outer membrane protein (OMP FetA antigen of N. meningitidis serogroup A isolates obtained from cases of invasive meningococcal meningitis in Delhi, India. Methods: Eight isolates of N. meningitidis were collected from cerebrospinal fluid during October 2008 to May 2011 from occasional cases of meningococcal meningitis. Seven isolates were from outbreaks of meningococcal meningitis in 2005-2006 in Delhi and its adjoining areas. These were subjected to molecular typing of fetA gene, an outer membrane protein gene. Results: All 15 N. meningitides isolates studied were serogroup A. This surface exposed porin is putatively under immune pressure. Hence as a part of molecular characterization, genotyping was carried out to find out the diversity in outer membrane protein (FetA gene among the circulating isolates of N. meningitidis. All 15 isolates proved to be of the same existing allele type of FetA variable region (VR when matched with global database. The allele found was F3-1 for all the isolates. Interpretation & conclusions: There was no diversity reported in the outer membrane protein FetA in the present study and hence this protein appeared to be a stable molecule. More studies on molecular characterization of FetA antigen are required from different serogroups circulating in different parts of the world.

Creatinine Deiminase Adsorption onto Silicalite-Modified pH-FET for Creation of New Creatinine-Sensitive Biosensor

OpenAIRE

Marchenko, Svitlana V.; Soldatkin, Oleksandr O.; Kasap, Berna Ozansoy; Kurc, Burcu Akata; Soldatkin, Alexei P.; Dzyadevych, Sergei V.

2016-01-01

In the work, silicalite particles were used for the surface modification of pH-sensitive field-effect transistors (pH-FETs) with the purpose of developing new creatinine-sensitive biosensor. Creatinine deiminase (CD) adsorbed on the surface of silicalite-coated pH-FET served as a bioselective membrane. The biosensor based on CD immobilized in glutaraldehyde vapor (GA) was taken as control. The creatinine-sensitive biosensor obtained by adsorption on silicalite was shown to have better analyti...

Design and Performance Analysis of 1-Bit FinFET Full Adder Cells for Subthreshold Region at 16 nm Process Technology

Directory of Open Access Journals (Sweden)

‘Aqilah binti Abdul Tahrim

2015-01-01

Full Text Available The scaling process of the conventional 2D-planar metal-oxide semiconductor field-effect transistor (MOSFET is now approaching its limit as technology has reached below 20 nm process technology. A new nonplanar device architecture called FinFET was invented to overcome the problem by allowing transistors to be scaled down into sub-20 nm region. In this work, the FinFET structure is implemented in 1-bit full adder transistors to investigate its performance and energy efficiency in the subthreshold region for cell designs of Complementary MOS (CMOS, Complementary Pass-Transistor Logic (CPL, Transmission Gate (TG, and Hybrid CMOS (HCMOS. The performance of 1-bit FinFET-based full adder in 16-nm technology is benchmarked against conventional MOSFET-based full adder. The Predictive Technology Model (PTM and Berkeley Shortchannel IGFET Model-Common Multi-Gate (BSIM-CMG 16 nm low power libraries are used. Propagation delay, average power dissipation, power-delay-product (PDP, and energy-delay-product (EDP are analysed based on all four types of full adder cell designs of both FETs. The 1-bit FinFET-based full adder shows a great reduction in all four metric performances. A reduction in propagation delay, PDP, and EDP is evident in the 1-bit FinFET-based full adder of CPL, giving the best overall performance due to its high-speed performance and good current driving capabilities.

Diagonalization of Bounded Linear Operators on Separable Quaternionic Hilbert Space

International Nuclear Information System (INIS)

Feng Youling; Cao, Yang; Wang Haijun

2012-01-01

By using the representation of its complex-conjugate pairs, we have investigated the diagonalization of a bounded linear operator on separable infinite-dimensional right quaternionic Hilbert space. The sufficient condition for diagonalizability of quaternionic operators is derived. The result is applied to anti-Hermitian operators, which is essential for solving Schroedinger equation in quaternionic quantum mechanics.

Simulation study of a 3-D device integrating FinFET and UTBFET

KAUST Repository

Fahad, Hossain M.; Hu, Chenming; Hussain, Muhammad Mustafa

2015-01-01

By integrating 3-D nonplanar fins and 2-D ultrathin bodies, wavy FinFETs merge two formerly competing technologies on a silicon-on-insulator platform to deliver enhanced transistor performance compared with conventional trigate Fin

Modulation linearization of a frequency-modulated voltage controlled oscillator, part 3

Science.gov (United States)

Honnell, M. A.

1975-01-01

An analysis is presented for the voltage versus frequency characteristics of a varactor modulated VHF voltage controlled oscillator in which the frequency deviation is linearized by using the nonlinear characteristics of a field effect transistor as a signal amplifier. The equations developed are used to calculate the oscillator output frequency in terms of pertinent circuit parameters. It is shown that the nonlinearity exponent of the FET has a pronounced influence on frequency deviation linearity, whereas the junction exponent of the varactor controls total frequency deviation for a given input signal. A design example for a 250 MHz frequency modulated oscillator is presented.

Solar cell array for driving MOS type FET gate. MOS gata EFT gate kudoyo taiyo denchi array

Energy Technology Data Exchange (ETDEWEB)

Murakami, S; Yoshida, K; Yoshiki, T; Yamaguchi, Y; Nakayama, T; Owada, Y

1990-03-12

There has been a semiconductor relay utilizing MOS type FET (field effect transistor). Concerning the solar cells used for a semiconductor relay, it is required to separate the cells by forming insulating oxide films first and to form semiconductor layers by using many mask patterns, since a crystal semiconductor is used. Thereby its manufacturing process becomes complicated and laminification as well as thin film formation are difficult, In view of the above, this invention proposes a solar cell array for driving a MOS type FET gate consisting of amorphous silicon semiconductor cells, which are used for a semiconductor relay with solar cells generating electromotive power by the light of a light emitting diode and a MOS type FET that the power output of the above solar cells is supplied to its gate, and which are connected in series with many steps. 9 figs.

Deterministic operations research models and methods in linear optimization

CERN Document Server

Rader, David J

2013-01-01

Uniquely blends mathematical theory and algorithm design for understanding and modeling real-world problems Optimization modeling and algorithms are key components to problem-solving across various fields of research, from operations research and mathematics to computer science and engineering. Addressing the importance of the algorithm design process. Deterministic Operations Research focuses on the design of solution methods for both continuous and discrete linear optimization problems. The result is a clear-cut resource for understanding three cornerstones of deterministic operations resear

Quadratic Plus Linear Operators which Preserve Pure States of Quantum Systems: Small Dimensions

International Nuclear Information System (INIS)

Saburov, Mansoor

2014-01-01

A mathematical formalism of quantum mechanics says that a pure state of a quantum system corresponds to a vector of norm 1 and an observable is a self-adjoint operator on the space of states. It is of interest to describe all linear or nonlinear operators which preserve the pure states of the system. In the linear case, it is nothing more than isometries of Hilbert spaces. In the nonlinear case, this problem was open. In this paper, in the small dimensional spaces, we shall describe all quadratic plus linear operators which preserve pure states of the quantum system

Gain-scheduled Linear Quadratic Control of Wind Turbines Operating at High Wind Speed

DEFF Research Database (Denmark)

Østergaard, Kasper Zinck; Stoustrup, Jakob; Brath, Per

2007-01-01

This paper addresses state estimation and linear quadratic (LQ) control of variable speed variable pitch wind turbines. On the basis of a nonlinear model of a wind turbine, a set of operating conditions is identified and a LQ controller is designed for each operating point. The controller gains...... are then interpolated linearly to get a control law for the entire operating envelope. A nonlinear state estimator is designed as a combination of two unscented Kalman filters and a linear disturbance estimator. The gain-scheduling variable (wind speed) is then calculated from the output of these state estimators...

GIDL analysis of the process variation effect in gate-all-around nanowire FET

Science.gov (United States)

Kim, Shinkeun; Seo, Youngsoo; Lee, Jangkyu; Kang, Myounggon; Shin, Hyungcheol

2018-02-01

In this paper, the gate-induced drain leakage (GIDL) is analyzed on gate-all-around (GAA) Nanowire FET (NW FET) with ellipse-shaped channel induced by process variation effect (PVE). The fabrication process of nanowire can lead to change the shape of channel cross section from circle to ellipse. The effect of distorted channel shape is investigated and verified by technology computer-aided design (TCAD) simulation in terms of the GIDL current. The simulation results demonstrate that the components of GIDL current are two mechanisms of longitudinal band-to-band tunneling (L-BTBT) at body/drain junction and transverse band-to-band tunneling (T-BTBT) at gate/drain junction. These two mechanisms are investigated on channel radius (rnw) and aspect ratio of ellipse-shape respectively and together.

Synthesis, fabrication and characterization of Ge/Si axial nanowire heterostructure tunnel FETs

Energy Technology Data Exchange (ETDEWEB)

Picraux, Samuel T [Los Alamos National Laboratory; Dayeh, Shadi A [Los Alamos National Laboratory

2010-01-01

Axial Ge/Si heterostructure nanowires allow energy band-edge engineering along the axis of the nanowire, which is the charge transport direction, and the realization of asymmetric devices for novel device architectures. This work reports on two advances in the area of heterostructure nanowires and tunnel FETs: (i) the realization of 100% compositionally modulated Si/Ge axial heterostructure nanowires with lengths suitable for device fabrication and (ii) the design and implementation of Schottky barrier tunnel FETs on these nanowires for high-on currents and suppressed ambipolar behavior. Initial prototype devices resulted in a current drive in excess of 100 {micro}A/{micro}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios. These results demonstrate the potential of such asymmetric heterostructures (both in the semiconductor channel and metal-semiconductor barrier heights) for low-power and high performance electronics.

Three-dimensional Finite Elements Method simulation of Total Ionizing Dose in 22 nm bulk nFinFETs

Energy Technology Data Exchange (ETDEWEB)

Chatzikyriakou, Eleni, E-mail: ec3g12@soton.ac.uk; Potter, Kenneth; Redman-White, William; De Groot, C.H.

2017-02-15

Highlights: • Simulation of Total Ionizing Dose using the Finite Elements Method. • Carrier generation, transport and trapping in the oxide. • Application in three-dimensional bulk FinFET model of 22 nm node. • Examination of trapped charge in the Shallow Trench Isolation. • Trapped charge dependency of parasitic transistor current. - Abstract: Finite Elements Method simulation of Total Ionizing Dose effects on 22 nm bulk Fin Field Effect Transistor (FinFET) devices using the commercial software Synopsys Sentaurus TCAD is presented. The simulation parameters are extracted by calibrating the charge trapping model to experimental results on 400 nm SiO{sub 2} capacitors irradiated under zero bias. The FinFET device characteristics are calibrated to the Intel 22 nm bulk technology. Irradiation simulations of the transistor performed with all terminals unbiased reveal increased hardness up to a total dose of 1 MRad(SiO{sub 2}).

Chemical and physical FET-based sensors or variations on an equation

NARCIS (Netherlands)

Olthuis, Wouter

2005-01-01

This paper exposes the continuous thread of Bergveld’s work: the model equation of the field-effect transistor (FET) derived and repeated in the theoretical section. Zooming in on some of the variables of this equation leads us to several of his important projects. A short description and typical

A study of operating parameters on the linear spark ignition engine

International Nuclear Information System (INIS)

Lim, Ocktaeck; Hung, Nguyen Ba; Oh, Seokyoung; Kim, Gangchul; Song, Hanho; Iida, Norimasa

2015-01-01

Highlights: • An experimental and simulation study of a linear engine is conducted. • The effects of operating parameters on the generating power are investigated. • The air gap length has a significant influence on the generating power. • The generating power of the linear engine is optimized with the value of 111.3 W. • There are no problems for the linear engine after 100 h of durable test. - Abstract: In this paper, we present our experiment and simulation study of a free piston linear engine based on operating conditions and structure of the linear engine for generating electric power. The free piston linear engine includes a two-stroke free piston engine, linear generators, and compressors. In the experimental study, the effects of key parameters such as input caloric value, equivalence ratio, spark timing delay, electrical resistance, and air gap length on the piston dynamics and electric power output are investigated. Propane is used as a fuel in the free piston linear engine, and it is premixed with the air to make a homogeneous charge before go into the cylinder. The air and fuel mass flow rate are varied by a mass flow controller. The experimental results show that the maximum generating power is found with the value of 111 W at the input caloric value of 5.88 kJ/s, spark timing delay of 1.5 ms, equivalence ratio of 1.0, electric resistance of 30 Ω, and air gap length of 1.0 mm. In order to check the durability of the linear engine, a durable test is conducted during 100 h. The experimental results show that there are no problems for the linear engine after about one hundred hours of the durable test. Beside experimental study, a simulation study is conducted to predict operating behavior of the linear engine. In the simulation study, the two-stroke free piston linear engine is modeled and simulated through a combination of three mathematical models including a dynamic model, a linear alternator model and a thermodynamic model. These

Study on the ELDRS of bipolar linear operational amplifier

International Nuclear Information System (INIS)

Yang Hui; Liu Yanfang; Chen Yu; Bai Hua; Zhang Dong

2011-01-01

Bipolar linear devices laboratory irradiation testing results are significantly different from the actual in flight exposure to the radiation. In this paper the total dose irradiation of operational amplifiers, and analysis upon the total dose response of these bipolar circuits under the different test conditions were investigated in the same experiment. Total dose tests of bipolar linear operational amplifiers show susceptible to dose rate, bias and room temperature annealing during exposure. The critical sensitive parameters of operational amplifier are input bias current, input offset current, input offset voltage, and open loop gain, which exhibits both bias and dose rate dependence. With calculating the change of each electrical parameter (Δpara) for each sample at 300 Gy radiation level, it has been found that ratio of the Δpara at low dose rate to the Δpara at high dose rate exceeds 2.46 times for any of the parameters. So these parts are considered to be ELDRS susceptible. After room temperature annealing, the main parameters have time dependence effect at low dose rate and without time dependent effect at high dose rate. (authors)

Toward tunable doping in graphene FETs by molecular self-assembled monolayers

Science.gov (United States)

Li, Bing; Klekachev, Alexander V.; Cantoro, Mirco; Huyghebaert, Cedric; Stesmans, André; Asselberghs, Inge; de Gendt, Stefan; de Feyter, Steven

2013-09-01

dopant. Electronic supplementary information (ESI) available: AFM images of self-assembled monolayers of OA on HOPG; AFM height image of the graphene surface on a SiC substrate; high resolution STM image of a self-assembled monolayer of OA on HOPG; transfer curves of a graphene FET with and without baking steps; transfer curves of a graphene FET under high vacuum conditions; transfer curves of a graphene FET and its Raman response before and after OA treatment; transfer curves of a graphene FET before and after rinsing with n-hexane. See DOI: 10.1039/c3nr01255g

Reduction of ballistic spin scattering in a spin-FET using stray electric fields

International Nuclear Information System (INIS)

Nemnes, G A; Manolescu, A; Gudmundsson, V

2012-01-01

The quasi-bound states which appear as a consequence of the Rashba spin-orbit (SO) coupling, introduce a strongly irregular behavior of the spin-FET conductance at large Rashba parameter. Moreover, the presence of the bulk inversion asymmetry, i.e. the Dresselhaus SO coupling, may compromise the spin-valve effect even at small values of the Rashba parameter. However, by introducing stray electric fields in addition to the SO couplings, we show that the effect of the SO induced quasi-bound states can be tuned. The oscillations of the spin-resolved conductance become smoother and the control of the spin-FET characteristics becomes possible. For the calculations we employ a multi-channel scattering formalism, based on the R-matrix method extended to spin transport, in the presence of Rashba and Dresselhaus SO couplings.

Optimization of urea-EnFET based on Ta2O5 layer with post annealing.

Science.gov (United States)

Lue, Cheng-En; Yu, Ting-Chun; Yang, Chia-Ming; Pijanowska, Dorota G; Lai, Chao-Sung

2011-01-01

In this study, the urea-enzymatic field effect transistors (EnFETs) were investigated based on pH-ion sensitive field effect transistors (ISFETs) with tantalum pentoxide (Ta(2)O(5)) sensing membranes. In addition, a post N(2) annealing was used to improve the sensing properties. At first, the pH sensitivity, hysteresis, drift, and light induced drift of the ISFETs were evaluated. After the covalent bonding process and urease immobilization, the urea sensitivity of the EnFETs were also investigated and compared with the conventional Si(3)N(4) sensing layer. The ISFETs and EnFETs with annealed Ta(2)O(5) sensing membranes showed the best responses, including the highest pH sensitivity (56.9 mV/pH, from pH 2 to pH 12) and also corresponded to the highest urea sensitivity (61 mV/pC(urea), from 1 mM to 7.5 mM). Besides, the non-ideal factors of pH hysteresis, time drift, and light induced drift of the annealed samples were also lower than the controlled Ta(2)O(5) and Si(3)N(4) sensing membranes.

Optimization of Urea-EnFET Based on Ta2O5 Layer with Post Annealing

Directory of Open Access Journals (Sweden)

Chao-Sung Lai

2011-04-01

Full Text Available In this study, the urea-enzymatic field effect transistors (EnFETs were investigated based on pH-ion sensitive field effect transistors (ISFETs with tantalum pentoxide (Ta2O5 sensing membranes. In addition, a post N2 annealing was used to improve the sensing properties. At first, the pH sensitivity, hysteresis, drift, and light induced drift of the ISFETs were evaluated. After the covalent bonding process and urease immobilization, the urea sensitivity of the EnFETs were also investigated and compared with the conventional Si3N4 sensing layer. The ISFETs and EnFETs with annealed Ta2O5 sensing membranes showed the best responses, including the highest pH sensitivity (56.9 mV/pH, from pH 2 to pH 12 and also corresponded to the highest urea sensitivity (61 mV/pCurea, from 1 mM to 7.5 mM. Besides, the non-ideal factors of pH hysteresis, time drift, and light induced drift of the annealed samples were also lower than the controlled Ta2O5 and Si3N4 sensing membranes.

Large-signal modeling method for power FETs and diodes

Energy Technology Data Exchange (ETDEWEB)

Sun Lu; Wang Jiali; Wang Shan; Li Xuezheng; Shi Hui; Wang Na; Guo Shengping, E-mail: sunlu_1019@126.co [School of Electromechanical Engineering, Xidian University, Xi' an 710071 (China)

2009-06-01

Under a large signal drive level, a frequency domain black box model of the nonlinear scattering function is introduced into power FETs and diodes. A time domain measurement system and a calibration method based on a digital oscilloscope are designed to extract the nonlinear scattering function of semiconductor devices. The extracted models can reflect the real electrical performance of semiconductor devices and propose a new large-signal model to the design of microwave semiconductor circuits.

Large-signal modeling method for power FETs and diodes

International Nuclear Information System (INIS)

Sun Lu; Wang Jiali; Wang Shan; Li Xuezheng; Shi Hui; Wang Na; Guo Shengping

2009-01-01

Under a large signal drive level, a frequency domain black box model of the nonlinear scattering function is introduced into power FETs and diodes. A time domain measurement system and a calibration method based on a digital oscilloscope are designed to extract the nonlinear scattering function of semiconductor devices. The extracted models can reflect the real electrical performance of semiconductor devices and propose a new large-signal model to the design of microwave semiconductor circuits.

Pressure effect on Fe3+/FeT in silicate melts and applications to magma redox, particularly in magma oceans

Science.gov (United States)

Zhang, H.; Hirschmann, M. M.

2014-12-01

The proportions of Fe3+ and Fe2+ in magmas reflect the redox conditions of their origin and influence the chemical and physical properties of natural silicate liquids, but the relationship between Fe3+/FeT and oxygen fugacity depends on pressure owing to different molar volumes and compressibilities of Fe3+ and Fe2+ in silicates. An important case where the effect of pressure effect may be important is in magma oceans, where well mixed (and therefore potentially uniform Fe3+/FeT) experiencses a wide range of pressures, and therefore can impart different ƒO2 at different depths, influencing magma ocean degassing and early atmospheres, as well as chemical gradients within magma oceans. To investigate the effect of pressure on magmatic Fe3+/FeT we conducted high pressure expeirments on ƒO2-buffered andestic liquids. Quenched glasses were analyzed by Mössbauer spectroscopy. To verify the accuracy of Mössbauer determinations of Fe3+/FeT in glasses, we also conducted low temperature Mössbauer studies to determine differences in the recoilless fraction (ƒ) of Fe2+ and Fe3. These indicate that room temperature Mössbauer determinations of on Fe3+/FeT glasses are systematically high by 4% compared to recoilless-fraction corrected ratios. Up to 7 GPa, pressure decreases Fe3+/FeT, at fixed ƒO2 relative to metal-oxide buffers, meaning that an isochemical magma will become more reduced with decreasing pressure. Consequently, for small planetary bodies such as the Moon or Mercury, atmospheres overlying their MO will be highly reducing, consisting chiefly of H2 and CO. The same may also be true for Mars. The trend may reverse at higher pressure, as is the case for solid peridotite, and so for Earth, Venus, and possibly Mars, more oxidized atmospheres above MO are possible. Diamond anvil experiments are underway to examine this hypothesis.

Static and dynamic 18F-FET PET for the characterization of gliomas defined by IDH and 1p/19q status.

Science.gov (United States)

Verger, Antoine; Stoffels, Gabriele; Bauer, Elena K; Lohmann, Philipp; Blau, Tobias; Fink, Gereon R; Neumaier, Bernd; Shah, Nadim J; Langen, Karl-Josef; Galldiks, Norbert

2018-03-01

The molecular features isocitrate dehydrogenase (IDH) mutation and 1p/19q co-deletion have gained major importance for both glioma typing and prognosis and have, therefore, been integrated in the World Health Organization (WHO) classification in 2016. The aim of this study was to characterize static and dynamic O-(2- 18 F-fluoroethyl)-L-tyrosine ( 18 F-FET) PET parameters in gliomas with or without IDH mutation or 1p/19q co-deletion. Ninety patients with newly diagnosed and untreated gliomas with a static and dynamic 18 F-FET PET scan prior to evaluation of tumor tissue according to the 2016 WHO classification were identified retrospectively. Mean and maximum tumor-to-brain ratios (TBR mean/max ), as well as dynamic parameters (time-to-peak and slope) of 18 F-FET uptake were calculated. Sixteen (18%) oligodendrogliomas (IDH mutated, 1p/19q co-deleted), 27 (30%) astrocytomas (IDH mutated only), and 47 (52%) glioblastomas (IDH wild type only) were identified. TBR mean , TBR max , TTP and slope discriminated between IDH mutated astrocytomas and IDH wild type glioblastomas (P dynamic 18 F-FET PET parameters may allow determining non-invasively the IDH mutation status. However, IDH mutated and 1p/19q co-deleted oligodendrogliomas cannot be differentiated from glioblastomas and astrocytomas by 18 F-FET PET.

Comparison of 18F-FET and 18F-FLT small animal PET for the assessment of anti-VEGF treatment response in an orthotopic model of glioblastoma

International Nuclear Information System (INIS)

Nedergaard, Mette Kjoelhede; Michaelsen, Signe Regner; Perryman, Lara; Erler, Janine; Poulsen, Hans Skovgaard; Stockhausen, Marie-Thérése; Lassen, Ulrik; Kjaer, Andreas

2016-01-01

Background: The radiolabeled amino acid O-(2- 18 F-fluoroethyl)-L-tyrosine (FET) and thymidine analogue 3′-deoxy-3′- 18 F-fluorothymidine (FLT) are widely used for positron emission tomography (PET) brain tumor imaging; however, comparative studies are scarce. The aim of this study therefore was to compare FLT and FET PET for the assessment of anti-VEGF response in glioblastoma xenografts. Methods: Xenografts with confirmed intracranial glioblastoma were treated with anti-VEGF therapy (B20-4.1) or saline as control. Weekly bioluminescence imaging (BLI), FLT and FET PET/CT were used to follow treatment response. Tracer uptake of FLT and FET was quantified using maximum standardized uptake (SUV max ) values and tumor-to-background ratios (TBRs). Survival, the Ki67 proliferation index and micro-vessel density (MVD) were evaluated. Results: In contrast to FLT TBRs, FET TBRs were significantly lower as early as one week after treatment initiation in the anti-VEGF group as compared to the control group. Following two weeks of treatment, both FLT and FET TBRs were significantly lower in the anti-VEGF group. In contrast, no significant difference between the treatment groups was detected using BLI. Furthermore, we found a significantly lower MVD in the anti-VEGF group as compared to the control group. However, we found no difference in the Ki67 proliferation index or mean survival time. Conclusion: FET appears to be a more sensitive tracer than FLT to measure early response to anti-VEGF therapy with PET. Advances in knowledge and implications for patient care FET PET appears to be an early predictor of anti-VEGF efficacy. Confirmation of these results in clinical studies is needed.

Some subclasses of multivalent functions involving a certain linear operator

Science.gov (United States)

Srivastava, H. M.; Patel, J.

2005-10-01

The authors investigate various inclusion and other properties of several subclasses of the class of normalized p-valent analytic functions in the open unit disk, which are defined here by means of a certain linear operator. Problems involving generalized neighborhoods of analytic functions in the class are investigated. Finally, some applications of fractional calculus operators are considered.

RESOLUTE PET/MRI Attenuation Correction for O-(2-18F-fluoroethyl-L-tyrosine (FET in Brain Tumor Patients with Metal Implants

Directory of Open Access Journals (Sweden)

Claes N. Ladefoged

2017-08-01

Full Text Available Aim: Positron emission tomography (PET imaging is a useful tool for assisting in correct differentiation of tumor progression from reactive changes, and the radiolabeled amino acid analog tracer O-(2-18F-fluoroethyl-L-tyrosine (FET-PET is amongst the most frequently used. The FET-PET images need to be quantitatively correct in order to be used clinically, which require accurate attenuation correction (AC in PET/MRI. The aim of this study was to evaluate the use of the subject-specific MR-derived AC method RESOLUTE in post-operative brain tumor patients.Methods: We analyzed 51 post-operative brain tumor patients (68 examinations, 200 MBq [18F]-FET investigated in a PET/MRI scanner. MR-AC maps were acquired using: (1 the Dixon water fat separation sequence, (2 the ultra short echo time (UTE sequences, (3 calculated using our new RESOLUTE methodology, and (4 a same day low-dose CT used as reference “gold standard.” For each subject and each AC method the tumor was delineated by isocontouring tracer uptake above a tumor(T-to-brain background (B activity ratio of 1.6. We measured B, tumor mean and maximal activity (TMEAN, TMAX, biological tumor volume (BTV, and calculated the clinical metrics TMEAN/B and TMAX/B.Results: When using RESOLUTE 5/68 studies did not meet our predefined acceptance criteria of TMAX/B difference to CT-AC < ±0.1 or 5%, TMEAN/B < ±0.05 or 5%, and BTV < ±2 mL or 10%. In total, 46/68 studies failed our acceptance criteria using Dixon, and 26/68 using UTE. The 95% limits of agreement for TMAX/B was for RESOLUTE (−3%; 4%, Dixon (−9%; 16%, and UTE (−7%; 10%. The absolute error when measuring BTV was 0.7 ± 1.9 mL (N.S with RESOLUTE, 5.3 ± 10 mL using Dixon, and 1.7 ± 3.7 mL using UTE. RESOLUTE performed best in the identification of the location of peak activity and in brain tumor follow-up monitoring using clinical FET PET metrics.Conclusions: Overall, we found RESOLUTE to be the AC method that most robustly

Approximation of functions in two variables by some linear positive operators

Directory of Open Access Journals (Sweden)

Mariola Skorupka

1995-12-01

Full Text Available We introduce some linear positive operators of the Szasz-Mirakjan type in the weighted spaces of continuous functions in two variables. We study the degree of the approximation of functions by these operators. The similar results for functions in one variable are given in [5]. Some operators of the Szasz-Mirakjan type are examined also in [3], [4].

Cost-effectiveness analysis of FET PET-guided target selection for the diagnosis of gliomas

International Nuclear Information System (INIS)

Heinzel, Alexander; Stock, Stephanie; Mueller, Dirk; Langen, Karl-Josef

2012-01-01

Several diagnostic trials have indicated that the combined use of 18 F-fluoroethyl-l-tyrosine (FET) PET and MRI may be superior to MRI alone in selecting the biopsy site for the diagnosis of gliomas. We estimated the cost-effectiveness of the use of amino acid PET compared to MRI alone from the perspective of the German statutory health insurance. To evaluate the incremental cost-effectiveness of the use of amino acid PET, a decision tree model was built. The effectiveness of FET PET was determined by the probability of a correct diagnosis. Costs were estimated for a baseline scenario and for a more expensive scenario in which disease severity was considered. The robustness of the results was tested using deterministic and probabilistic sensitivity analyses. The combined use of PET and MRI resulted in an increase of 18.5% in the likelihood of a correct diagnosis. The incremental cost-effectiveness ratio for one additional correct diagnosis using FET PET was EUR6,405 for the baseline scenario and EUR9,114 for the scenario based on higher disease severity. The probabilistic sensitivity analysis confirmed the robustness of the results. The model indicates that the use of amino acid PET may be cost-effective in patients with glioma. As a result of several limitations in the data used for the model, further studies are needed to confirm the results. (orig.)

Cost-effectiveness analysis of FET PET-guided target selection for the diagnosis of gliomas

Energy Technology Data Exchange (ETDEWEB)

Heinzel, Alexander [Research Centre Juelich, Department of Nuclear Medicine of the Heinrich-Heine University of Duesseldorf, Juelich (Germany); Stock, Stephanie; Mueller, Dirk [University Hospital of Cologne, Institute for Health Economics and Clinical Epidemiology, Cologne (Germany); Langen, Karl-Josef [Research Centre Juelich, Institute for Neuroscience and Medicine 4, Juelich (Germany)

2012-07-15

Several diagnostic trials have indicated that the combined use of {sup 18}F-fluoroethyl-l-tyrosine (FET) PET and MRI may be superior to MRI alone in selecting the biopsy site for the diagnosis of gliomas. We estimated the cost-effectiveness of the use of amino acid PET compared to MRI alone from the perspective of the German statutory health insurance. To evaluate the incremental cost-effectiveness of the use of amino acid PET, a decision tree model was built. The effectiveness of FET PET was determined by the probability of a correct diagnosis. Costs were estimated for a baseline scenario and for a more expensive scenario in which disease severity was considered. The robustness of the results was tested using deterministic and probabilistic sensitivity analyses. The combined use of PET and MRI resulted in an increase of 18.5% in the likelihood of a correct diagnosis. The incremental cost-effectiveness ratio for one additional correct diagnosis using FET PET was EUR6,405 for the baseline scenario and EUR9,114 for the scenario based on higher disease severity. The probabilistic sensitivity analysis confirmed the robustness of the results. The model indicates that the use of amino acid PET may be cost-effective in patients with glioma. As a result of several limitations in the data used for the model, further studies are needed to confirm the results. (orig.)

Multiple Independent Gate FETs: How Many Gates Do We Need?

OpenAIRE

Amarù, Luca; Hills, Gage; Gaillardon, Pierre-Emmanuel; Mitra, Subhasish; De Micheli, Giovanni

2015-01-01

Multiple Independent Gate Field Effect Transistors (MIGFETs) are expected to push FET technology further into the semiconductor roadmap. In a MIGFET, supplementary gates either provide (i) enhanced conduction properties or (ii) more intelligent switching functions. In general, each additional gate also introduces a side implementation cost. To enable more efficient digital systems, MIGFETs must leverage their expressive power to realize complex logic circuits with few physical resources. Rese...

The antibody-based magnetic microparticle immunoassay using p-FET sensing platform for Alzheimer's disease pathogenic factor

Science.gov (United States)

Kim, Chang-Beom; Kim, Kwan-Soo; Song, Ki-Bong

2013-05-01

The importance of early Alzheimer's disease (AD) detection has been recognized to diagnose people at high risk of AD. The existence of intra/extracellular beta-amyloid (Aβ) of brain neurons has been regarded as the most archetypal hallmark of AD. The existing computed-image-based neuroimaging tools have limitations on accurate quantification of nanoscale Aβ peptides due to optical diffraction during imaging processes. Therefore, we propose a new method that is capable of evaluating a small amount of Aβ peptides by using photo-sensitive field-effect transistor (p-FET) integrated with magnetic force-based microbead collecting platform and selenium(Se) layer (thickness ~700 nm) as an optical filter. This method demonstrates a facile approach for the analysis of Aβ quantification using magnetic force and magnetic silica microparticles (diameter 0.2~0.3 μm). The microbead collecting platform mainly consists of the p-FET sensing array and the magnet (diameter ~1 mm) which are placed beneath each sensing region of the p-FET, which enables the assembly of the Aβ antibody conjugated microbeads, captures the Aβ peptides from samples, measures the photocurrents generated by the Q-dot tagged with Aβ peptides, and consequently results in the effective Aβ quantification.

Sparse PDF maps for non-linear multi-resolution image operations

KAUST Repository

Hadwiger, Markus

2012-11-01

We introduce a new type of multi-resolution image pyramid for high-resolution images called sparse pdf maps (sPDF-maps). Each pyramid level consists of a sparse encoding of continuous probability density functions (pdfs) of pixel neighborhoods in the original image. The encoded pdfs enable the accurate computation of non-linear image operations directly in any pyramid level with proper pre-filtering for anti-aliasing, without accessing higher or lower resolutions. The sparsity of sPDF-maps makes them feasible for gigapixel images, while enabling direct evaluation of a variety of non-linear operators from the same representation. We illustrate this versatility for antialiased color mapping, O(n) local Laplacian filters, smoothed local histogram filters (e.g., median or mode filters), and bilateral filters. © 2012 ACM.

Continuity and general perturbation of the Drazin inverse for closed linear operators

Directory of Open Access Journals (Sweden)

N. Castro González

2002-01-01

Full Text Available We study perturbations and continuity of the Drazin inverse of a closed linear operator A and obtain explicit error estimates in terms of the gap between closed operators and the gap between ranges and nullspaces of operators. The results are used to derive a theorem on the continuity of the Drazin inverse for closed operators and to describe the asymptotic behavior of operator semigroups.

Sparse PDF maps for non-linear multi-resolution image operations

KAUST Repository

Hadwiger, Markus; Sicat, Ronell Barrera; Beyer, Johanna; Krü ger, Jens J.; Mö ller, Torsten

2012-01-01

feasible for gigapixel images, while enabling direct evaluation of a variety of non-linear operators from the same representation. We illustrate this versatility for antialiased color mapping, O(n) local Laplacian filters, smoothed local histogram filters

Argument estimates of certain multivalent functions involving a linear operator

Directory of Open Access Journals (Sweden)

Nak Eun Cho

2002-01-01

Full Text Available The purpose of this paper is to derive some argument properties of certain multivalent functions in the open unit disk involving a linear operator. We also investigate their integral preserving property in a sector.

Fermionic effective operators and Higgs production at a linear collider

International Nuclear Information System (INIS)

Kile, Jennifer; Ramsey-Musolf, Michael J.

2007-01-01

We study the possible contributions of dimension six operators containing fermion fields to Higgs production at a 500 GeV or 1 TeV e + e - linear collider. We show that--depending on the production mechanism--the effects of such operators can be kinematically enhanced relative to standard model (SM) contributions. We determine constraints on the operator coefficients implied by existing precision electroweak measurements and the scale of neutrino mass. We find that even in the presence of such constraints, substantial deviations from SM Higgs production cross sections are possible. We compare the effects of fermionic operators with those associated with purely bosonic operators that have been previously discussed in the literature

Impact of Channel, Stress-Relaxed Buffer, and S/D Si1- x Ge x Stressor on the Performance of 7-nm FinFET CMOS Design with the Implementation of Stress Engineering

Science.gov (United States)

Othman, Nurul Aida Farhana; Hatta, Sharifah Fatmadiana Wan Muhamad; Soin, Norhayati

2018-04-01

Stress-engineered fin-shaped field effect transistors (FinFET) using germanium (Ge) is a promising performance booster to replace silicon (Si) due to its high holes mobility. This paper presents a three-dimensional simulation by the Sentaurus technology computer-aided design to study the effects of stressors—channel stress, stress-relaxed buffer (SRB), and source/drain (S/D) epitaxial stress—on different bases of FinFET, specifically silicon germanium (SiGe) and Ge-based, whereby the latter is achieved by manipulating the Ge mole fraction inside the three layers; their effects on the devices' figures-of-merits were recorded. The simulation generates an advanced calibration process, by which the drift diffusion simulation was adopted for ballistic transport effects. The results show that current enhancement in p-type FinFET (p-FinFET) with 110% is almost twice that in n-type FinFET (n-FinFET) with 57%, with increasing strain inside the channel suggesting that the use of strain is more effective for holes. In SiGe-based n-FinFET, the use of a high-strained SRB layer can improve the drive current up to 112%, while the high-strain S/D epitaxial for Ge-based p-FinFET can enhance the on-state current to 262%. Further investigations show that the channel and S/D doping are affecting the performances of SiGe-based FinFET with similar importance. It is observed that doping concentrations play an important role in threshold voltage adjustment as well as in drive current and subthreshold leakage improvements.

Simulation of thermo-mechanical effect in bulk-silicon FinFETs

OpenAIRE

Burenkov, Alex; Lorenz, Jürgen

2016-01-01

The thermo-mechanical effect in bulk-silicon FinFETs of the 14 nm CMOS technology node is studied by means of numerical simulation. The electrical performance of such devices is significantly enhanced by the intentional introduction of mechanical stress during the device processing. The thermo-mechanical effect modifies the mechanical stress distribution in active regions of the transistors when they are heated. This can lead to a modification of the electrical performance. Numerical simulati...

Generalized space and linear momentum operators in quantum mechanics

International Nuclear Information System (INIS)

Costa, Bruno G. da; Borges, Ernesto P.

2014-01-01

We propose a modification of a recently introduced generalized translation operator, by including a q-exponential factor, which implies in the definition of a Hermitian deformed linear momentum operator p ^ q , and its canonically conjugate deformed position operator x ^ q . A canonical transformation leads the Hamiltonian of a position-dependent mass particle to another Hamiltonian of a particle with constant mass in a conservative force field of a deformed phase space. The equation of motion for the classical phase space may be expressed in terms of the generalized dual q-derivative. A position-dependent mass confined in an infinite square potential well is shown as an instance. Uncertainty and correspondence principles are analyzed

On differential operators generating iterative systems of linear ODEs of maximal symmetry algebra

Science.gov (United States)

Ndogmo, J. C.

2017-06-01

Although every iterative scalar linear ordinary differential equation is of maximal symmetry algebra, the situation is different and far more complex for systems of linear ordinary differential equations, and an iterative system of linear equations need not be of maximal symmetry algebra. We illustrate these facts by examples and derive families of vector differential operators whose iterations are all linear systems of equations of maximal symmetry algebra. Some consequences of these results are also discussed.

Direct-written polymer field-effect transistors operating at 20 MHz.

Science.gov (United States)

Perinot, Andrea; Kshirsagar, Prakash; Malvindi, Maria Ada; Pompa, Pier Paolo; Fiammengo, Roberto; Caironi, Mario

2016-12-12

Printed polymer electronics has held for long the promise of revolutionizing technology by delivering distributed, flexible, lightweight and cost-effective applications for wearables, healthcare, diagnostic, automation and portable devices. While impressive progresses have been registered in terms of organic semiconductors mobility, field-effect transistors (FETs), the basic building block of any circuit, are still showing limited speed of operation, thus limiting their real applicability. So far, attempts with organic FETs to achieve the tens of MHz regime, a threshold for many applications comprising the driving of high resolution displays, have relied on the adoption of sophisticated lithographic techniques and/or complex architectures, undermining the whole concept. In this work we demonstrate polymer FETs which can operate up to 20 MHz and are fabricated by means only of scalable printing techniques and direct-writing methods with a completely mask-less procedure. This is achieved by combining a fs-laser process for the sintering of high resolution metal electrodes, thus easily achieving micron-scale channels with reduced parasitism down to 0.19 pF mm -1 , and a large area coating technique of a high mobility polymer semiconductor, according to a simple and scalable process flow.

Synthesis of substituted Calix[6] arene and 18F labeling reaction as catalyst in preparation of 18F-FET

International Nuclear Information System (INIS)

Peng Cheng; Ma Yunchuan; Chen Xiaoxiao; Li Guixia; Li Shilei; Zhang Shuting; He Yong; Qi Chuanmin

2011-01-01

The phase transfer catalyst Substituted Calix[6] arene was prepared and it was used as catalyst to prepare the tumor diagnostic drug 18 F-FET. The results showed that para-sulfonated-calix[6] arene not only catalyzes 19 F substitution reaction, but also catalyzes 18 F labelling reaction with radiochemical yield of 11%. However, para-tert-butyl-calix[6] arene has no catalytic activity for the 19 F substitution reaction nor the 18 F labelling reaction of the precursor of FET. The catalyzing of para-sulfonated-calix[6]arene may be related to it's sulfonate groups, which participated in the coordination reaction and increased the polarity of calyx[6] arene and so on. Although radiochemical yield of the para-sulfonated-calix[6] arene catalyzed 18 F labeling of the precursor of FET was much lower than that obtained by Kryptofix 2. 2. 2, this study still has significant meaning for us to find better substituted Calix[6] arene catalysts by optimizing the reaction conditions. (authors)

A Label-Free and Ultrasensitive Immunosensor for Detection of Human Chorionic Gonadotrophin Based on Graphene FETs.

Science.gov (United States)

Islam, Kamrul; Suhail, Ahmed; Pan, Genhua

2017-07-12

We report on a label-free immunosensor based on graphene field effect transistors (G-FETs) for the ultrasensitive detection of Human Chorionic Gonadotrophin (hCG), as an indicator of pregnancy and related disorders, such as actopic pregnancy, choriocarcinoma and orchic teratoma. Pyrene based bioactive ester was non-covalently anchored onto the graphene channel in order to retain the sp² lattice. The G-FET transfer characteristics showed repeatable and reliable responses in all surface modifying steps using a direct current (DC) readout system. The hCG concentration gradient showed a detection limit of ~1 pg·mL -1 . The proposed method facilitates the cost-effective and viable production of graphene point-of-care devices for clinical diagnosis.

Algorithms for sorting unsigned linear genomes by the DCJ operations.

Science.gov (United States)

Jiang, Haitao; Zhu, Binhai; Zhu, Daming

2011-02-01

The double cut and join operation (abbreviated as DCJ) has been extensively used for genomic rearrangement. Although the DCJ distance between signed genomes with both linear and circular (uni- and multi-) chromosomes is well studied, the only known result for the NP-complete unsigned DCJ distance problem is an approximation algorithm for unsigned linear unichromosomal genomes. In this article, we study the problem of computing the DCJ distance on two unsigned linear multichromosomal genomes (abbreviated as UDCJ). We devise a 1.5-approximation algorithm for UDCJ by exploiting the distance formula for signed genomes. In addition, we show that UDCJ admits a weak kernel of size 2k and hence an FPT algorithm running in O(2(2k)n) time.

Evaluating the graphene oxide dispersions for Fish Embryo Toxicity (FET) test

Energy Technology Data Exchange (ETDEWEB)

Clemente, Zaira; Franqui, Lidiane; Silva, Cristiane A.; Martinez, Diego Stefani Teodoro, E-mail: zairaclemente@hotmail.com [Centro Nacional de Pesquisa em Energia e Materiais (CNPEM), Campinas, SP (Brazil); Castro, Vera Lucia Scherholz Salgado [Empresa Brasileira de Pesquisa Agropecuaria (EMBRAPA), Campinhas, SP (Brazil)

2016-07-01

Full text: The Fish Embryo Toxicity (FET) test has wide utilization in nano ecotoxicology. However, some difficulties have been found related to the aggregation and precipitation of nanomaterials in exposure medium and the contrasting results among studies due to differences in the material characteristics. Furthermore, abiotic factors as the presence of organic matter can influence the test evaluation. The aim of this study was to evaluate and characterize the effect of the humic acid presence in the stability of two types of graphene oxide dispersion in an exposure medium used in FET test. Stock-suspensions (1.0 mg mL{sup -1}) of GO (sigma Aldrich, flakes) or base-washed GO (bwGO) and humic acid (HA sodium salt, Sigma Aldrich) were prepared in ultrapure water (UW). They were sonicated before preparing the GO or bwGO test suspensions at 100.0 μg mL{sup -1} in UW and reconstituted water (RW, pH 8±0.2, 425±129 μS/cm), with HA (20.0 μg mL{sup -1})or not. The samples were incubated during 96h at 26 deg C. The GO and bwGO and its dispersions were characterized through the following techniques: spectrophotometry, centrifugation, dynamic light scattering (DLS), nanoparticle tracking analysis (NTA), thermogravimetry (TGA), and X-ray photoelectron spectrometry (XPS). The results showed that materials aggregated and precipitated quickly in RW, but in the presence of HA the stability was similar to that found in UW. The aggregation and precipitation of bwGO was more intense than that of GO. The bwGO showed a great particle sizes heterogeneity than GO, in any condition tested. The different behavior can be related to the less presence of oxygenated groups in bwGO regards to GO. These results showed that surface characteristic of GO and the presence of HA influence the GO behavior in exposure medium and support the use of HA as a natural dispersant to graphene oxide in FET test. (author)

Lowered operation voltage in Pt/SBi2Ta2O9/HfO2/Si ferroelectric-gate field-effect transistors by oxynitriding Si

International Nuclear Information System (INIS)

Horiuchi, Takeshi; Takahashi, Mitsue; Li, Qiu-Hong; Wang, Shouyu; Sakai, Shigeki

2010-01-01

Oxynitrided Si (SiON) surfaces show smaller subthreshold swings than do directly nitrided Si (SiN) surfaces when used in ferroelectric-gate field-effect transistors (FeFETs) having the following stacked-gate structure: Pt/SrBi 2 Ta 2 O 9 (SBT)/HfO 2 /Si. SiON/Si substrates for FeFETs were prepared by rapid thermal oxidation (RTO) in O 2 at 1000 °C and subsequent rapid thermal nitridation (RTN) in NH 3 at various temperatures in the range 950–1150 °C. The electrical properties of the Pt/SBT/HfO 2 /SiON/Si FeFET were compared with those of reference FETs, i.e. Pt/SBT/HfO 2 gate stacks formed on Si substrates subjected to various treatments: SiN x /Si formed by RTN, SiO 2 /Si formed by RTO and untreated Si. The Pt/SBT/HfO 2 /SiON/Si FeFET had a larger memory window than all the other reference FeFETs, particularly at low operation voltages when the RTN temperature was 1050 °C

Linear response theory for magnetic Schrodinger operators in disordered media

CERN Document Server

Bouclet, J M; Klein, A; Schenker, J

2004-01-01

We justify the linear response theory for an ergodic Schrodinger operator with magnetic field within the non-interacting particle approximation, and derive a Kubo formula for the electric conductivity tensor. To achieve that, we construct suitable normed spaces of measurable covariant operators where the Liouville equation can be solved uniquely. If the Fermi level falls into a region of localization, we recover the well-known Kubo-Streda formula for the quantum Hall conductivity at zero temperature.

Radial solutions to semilinear elliptic equations via linearized operators

Directory of Open Access Journals (Sweden)

Phuong Le

2017-04-01

Full Text Available Let $u$ be a classical solution of semilinear elliptic equations in a ball or an annulus in $\\mathbb{R}^N$ with zero Dirichlet boundary condition where the nonlinearity has a convex first derivative. In this note, we prove that if the $N$-th eigenvalue of the linearized operator at $u$ is positive, then $u$ must be radially symmetric.

A Label-Free and Ultrasensitive Immunosensor for Detection of Human Chorionic Gonadotrophin Based on Graphene FETs

Directory of Open Access Journals (Sweden)

Kamrul Islam

2017-07-01

Full Text Available We report on a label-free immunosensor based on graphene field effect transistors (G-FETs for the ultrasensitive detection of Human Chorionic Gonadotrophin (hCG, as an indicator of pregnancy and related disorders, such as actopic pregnancy, choriocarcinoma and orchic teratoma. Pyrene based bioactive ester was non-covalently anchored onto the graphene channel in order to retain the sp2 lattice. The G-FET transfer characteristics showed repeatable and reliable responses in all surface modifying steps using a direct current (DC readout system. The hCG concentration gradient showed a detection limit of ~1 pg·mL−1. The proposed method facilitates the cost-effective and viable production of graphene point-of-care devices for clinical diagnosis.

High-performance all-printed amorphous oxide FETs and logics with electronically compatible electrode/ channel interface.

Science.gov (United States)

Sharma, Bhupendra Kumar; Stoesser, Anna; Mondal, Sandeep Kumar; Garlapati, Suresh K; Fawey, Mohammed H; Chakravadhanula, Venkata Sai Kiran; Kruk, Robert; Hahn, Horst; Dasgupta, Subho

2018-06-12

Oxide semiconductors typically show superior device performance compared to amorphous silicon or organic counterparts, especially, when they are physical vapor deposited. However, it is not easy to reproduce identical device characteristics when the oxide field-effect transistors (FETs) are solution-processed/ printed; the level of complexity further intensifies with the need to print the passive elements as well. Here, we developed a protocol for designing the most electronically compatible electrode/ channel interface based on the judicious material selection. Exploiting this newly developed fabrication schemes, we are now able to demonstrate high-performance all-printed FETs and logic circuits using amorphous indium-gallium-zinc oxide (a-IGZO) semiconductor, indium tin oxide (ITO) as electrodes and composite solid polymer electrolyte as the gate insulator. Interestingly, all-printed FETs demonstrate an optimal electrical performance in terms of threshold voltages and device mobility and may very well be compared with devices fabricated using sputtered ITO electrodes. This observation originates from the selection of electrode/ channel materials from the same transparent semiconductor oxide family, resulting in the formation of In-Sn-Zn-O (ITZO) based diffused a-IGZO/ ITO interface that controls doping density while ensuring high electrical performance. Compressive spectroscopic studies reveal that Sn doping mediated excellent band alignment of IGZO with ITO electrodes is responsible for the excellent device performance observed. All-printed n-MOS based logic circuits have also been demonstrated towards new-generation portable electronics.

Room to high temperature measurements of flexible SOI FinFETs with sub-20-nm fins

KAUST Repository

Diab, Amer El Hajj

2014-12-01

We report the temperature dependence of the core electrical parameters and transport characteristics of a flexible version of fin field-effect transistor (FinFET) on silicon-on-insulator (SOI) with sub-20-nm wide fins and high-k/metal gate-stacks. For the first time, we characterize them from room to high temperature (150 °C) to show the impact of temperature variation on drain current, gate leakage current, and transconductance. Variation of extracted parameters, such as low-field mobility, subthreshold swing, threshold voltage, and ON-OFF current characteristics, is reported too. Direct comparison is made to a rigid version of the SOI FinFETs. The mobility degradation with temperature is mainly caused by phonon scattering mechanism. The overall excellent devices performance at high temperature after release is outlined proving the suitability of truly high-performance flexible inorganic electronics with such advanced architecture.

Out-of-plane strain effect on silicon-based flexible FinFETs

KAUST Repository

Ghoneim, Mohamed T.; Alfaraj, Nasir; Sevilla, Galo T.; Fahad, Hossain M.; Hussain, Muhammad Mustafa

2015-01-01

Summary form only given. We report out-of-plane strain effect on silicon based flexible FinFET, with sub 20 nm wide fins and hafnium silicate based high-κ gate dielectric. Since ultra-thin inorganic solid state substrates become flexible with reduced thickness, flexing induced strain does not enhance performance. However, detrimental effects arise as the devices are subject to various out-of-plane stresses (compressive and tensile) along the channel length.

Out-of-plane strain effect on silicon-based flexible FinFETs

KAUST Repository

Ghoneim, Mohamed T.

2015-06-21

Summary form only given. We report out-of-plane strain effect on silicon based flexible FinFET, with sub 20 nm wide fins and hafnium silicate based high-κ gate dielectric. Since ultra-thin inorganic solid state substrates become flexible with reduced thickness, flexing induced strain does not enhance performance. However, detrimental effects arise as the devices are subject to various out-of-plane stresses (compressive and tensile) along the channel length.

Static and dynamic 18F-FET PET for the characterization of gliomas defined by IDH and 1p/19q status

International Nuclear Information System (INIS)

Verger, Antoine; Stoffels, Gabriele; Lohmann, Philipp; Neumaier, Bernd; Bauer, Elena K.; Blau, Tobias; Fink, Gereon R.; Shah, Nadim J.; Langen, Karl-Josef; Galldiks, Norbert

2018-01-01

The molecular features isocitrate dehydrogenase (IDH) mutation and 1p/19q co-deletion have gained major importance for both glioma typing and prognosis and have, therefore, been integrated in the World Health Organization (WHO) classification in 2016. The aim of this study was to characterize static and dynamic O-(2- 18 F-fluoroethyl)-L-tyrosine ( 18 F-FET) PET parameters in gliomas with or without IDH mutation or 1p/19q co-deletion. Ninety patients with newly diagnosed and untreated gliomas with a static and dynamic 18 F-FET PET scan prior to evaluation of tumor tissue according to the 2016 WHO classification were identified retrospectively. Mean and maximum tumor-to-brain ratios (TBR mean/max ), as well as dynamic parameters (time-to-peak and slope) of 18 F-FET uptake were calculated. Sixteen (18%) oligodendrogliomas (IDH mutated, 1p/19q co-deleted), 27 (30%) astrocytomas (IDH mutated only), and 47 (52%) glioblastomas (IDH wild type only) were identified. TBR mean , TBR max , TTP and slope discriminated between IDH mutated astrocytomas and IDH wild type glioblastomas (P < 0.01). TBR mean showed the best diagnostic performance (cut-off 1.95; sensitivity, 89%; specificity, 67%; accuracy, 81%). None of the parameters discriminated between oligodendrogliomas (IDH mutated, 1p/19q co-deleted) and glioblastomas or astrocytomas. Furthermore, TBR mean , TBR max , TTP, and slope discriminated between gliomas with and without IDH mutation (p < 0.01). The best diagnostic performance was obtained for the combination of TTP with TBR max or slope (accuracy, 73%). Data suggest that static and dynamic 18 F-FET PET parameters may allow determining non-invasively the IDH mutation status. However, IDH mutated and 1p/19q co-deleted oligodendrogliomas cannot be differentiated from glioblastomas and astrocytomas by 18 F-FET PET. (orig.)

Classification and Construction of Invertible Linear Differential Operators on a One-Dimensional Manifold

Directory of Open Access Journals (Sweden)

V. N. Chetverikov

2014-01-01

Full Text Available Invertible linear differential operators with one independent variable are investigated. The problem of description of such operators is important, because it is connected with transformations and the classification of control systems, in particular, with the flatness problem.Each invertible linear differential operator represents a square matrix of scalar differential operators. Its product with an operator-column is an operator-column whose order does not exceed the sum of orders of initial operators. The operators-columns, the product with which leads to order fall, i.e. the order of the product is less than sum of orders of factors, are interesting for the description of invertible operators. In this paper the classification of invertible operators is based on dimensions dk,p of intersections of modules Gp and Fk for various k and p, where Gp is the module of all operators-columns of order not above p, and Fk is the module of compositions of the invertible operator with all operators-columns of order not above k. The invertible operators that have identical sets of numbers dk,p form one class.In the paper the general properties of tables of numbers dk,p for invertible operators are investigated. A correspondence between invertible operators and elementary-geometrical models which in the paper are named by d-schemes of squares is constructed. The invertible operator is ambiguously defined by its d-scheme of squares. The mathematical structure that must be set for its unique definition and an algorithm for the construction of the invertible operator are offered.In the proof of the main result, methods of the theory of chain complexes and their spectral sequences are used. In the paper all necessary concepts of this theory are formulated and the corresponding facts are proved.Results of the paper can be used for solving problems in which invertible linear differential operators are arisen. Namely, it is necessary to formulate the conditions on

Device fabrication and transport measurements of FinFETs built with 28Si SOI wafers towards donor qubits in silicon

Energy Technology Data Exchange (ETDEWEB)

Lo, Cheuk Chi; Persaud, Arun; Dhuey, Scott; Olynick, Deirdre; Borondics, Ferenc; Martin, Michael C.; Bechtel, Hans A.; Bokor, Jeffrey; Schenkel, Thomas

2009-06-10

We report fabrication of transistors in a FinFET geometry using isotopically purified silicon-28 -on-insulator (28-SOI) substrates. Donor electron spin coherence in natural silicon is limited by spectral diffusion due to the residual 29Si nuclear spin bath, making isotopically enriched nuclear spin-free 28Si substrates a promising candidate for forming spin quantum bit devices. The FinFET architecture is fully compatible with single-ion implant detection for donor-based qubits, and the donor spin-state readout through electrical detection of spin resonance. We describe device processing steps and discuss results on electrical transport measurements at 0.3 K.

Reliability evaluation of high-performance, low-power FinFET standard cells based on mixed RBB/FBB technique

Science.gov (United States)

Wang, Tian; Cui, Xiaoxin; Ni, Yewen; Liao, Kai; Liao, Nan; Yu, Dunshan; Cui, Xiaole

2017-04-01

With shrinking transistor feature size, the fin-type field-effect transistor (FinFET) has become the most promising option in low-power circuit design due to its superior capability to suppress leakage. To support the VLSI digital system flow based on logic synthesis, we have designed an optimized high-performance low-power FinFET standard cell library based on employing the mixed FBB/RBB technique in the existing stacked structure of each cell. This paper presents the reliability evaluation of the optimized cells under process and operating environment variations based on Monte Carlo analysis. The variations are modelled with Gaussian distribution of the device parameters and 10000 sweeps are conducted in the simulation to obtain the statistical properties of the worst-case delay and input-dependent leakage for each cell. For comparison, a set of non-optimal cells that adopt the same topology without employing the mixed biasing technique is also generated. Experimental results show that the optimized cells achieve standard deviation reduction of 39.1% and 30.7% at most in worst-case delay and input-dependent leakage respectively while the normalized deviation shrinking in worst-case delay and input-dependent leakage can be up to 98.37% and 24.13%, respectively, which demonstrates that our optimized cells are less sensitive to variability and exhibit more reliability. Project supported by the National Natural Science Foundation of China (No. 61306040), the State Key Development Program for Basic Research of China (No. 2015CB057201), the Beijing Natural Science Foundation (No. 4152020), and Natural Science Foundation of Guangdong Province, China (No. 2015A030313147).

System-Level Sensitivity Analysis of SiNW-bioFET-Based Biosensing Using Lockin Amplification

DEFF Research Database (Denmark)

Patou, François; Dimaki, Maria; Kjærgaard, Claus

2017-01-01

carry out for the first time the system-level sensitivity analysis of a generic SiNW-bioFET model coupled to a custom-design instrument based on the lock-in amplifier. By investigating a large parametric space spanning over both sensor and instrumentation specifications, we demonstrate that systemwide...

Linear representation of algebras with non-associative operations which are satisfy in the balanced functional equations

International Nuclear Information System (INIS)

Ehsani, Amir

2015-01-01

Algebras with a pair of non-associative binary operations (f, g) which are satisfy in the balanced quadratic functional equations with four object variables considered. First, we obtain a linear representation for the operations, of this kind of binary algebras (A,f,g), over an abelian group (A, +) and then we generalize the linear representation of operations, to an algebra (A,F) with non-associative binary operations which are satisfy in the balanced quadratic functional equations with four object variables. (paper)

Theoretical foundations of functional data analysis, with an introduction to linear operators

CERN Document Server

Hsing, Tailen

2015-01-01

Theoretical Foundations of Functional Data Analysis, with an Introduction to Linear Operators provides a uniquely broad compendium of the key mathematical concepts and results that are relevant for the theoretical development of functional data analysis (FDA).The self-contained treatment of selected topics of functional analysis and operator theory includes reproducing kernel Hilbert spaces, singular value decomposition of compact operators on Hilbert spaces and perturbation theory for both self-adjoint and non self-adjoint operators. The probabilistic foundation for FDA is described from the

Carrier mobility and crystal perfection of tetracene thin film FET

International Nuclear Information System (INIS)

Moriguchi, N.; Nishikawa, T.; Anezaki, T.; Unno, A.; Tachibana, M.; Kojima, K.

2006-01-01

It is well-known that the carrier mobility of an organic field effect semiconductor (FET) depended on the crystal quality and/or the crystal perfection of the organic thin films [T.W. Kelly, D.V. Muyres, P.F. Baude, T.P. Smith, T.D. Jones, Mater. Res. Soc. Symp. Proc. 771 (2003) L6.5.1; D.J. Gundlach, J.A. Nichols, L. Zhou, T.N. Jackson, Appl. Phys. Lett. 80 (2002) 2925; H.K. Lauk, M. Halik, U. Zschieschang, G. Schmid, W. Radlik, J. Appl. Phys. 92 (2002) 5259; M. Shtein, J. Mapel, J.B. Benziger, S.R. Forrest, Appl. Phys. Lett. 81 (2002) 268; D. Knipp, R.A. Street, A.R. Volkel, Appl. Phys. Lett. 82 (2003) 3907; R. Ruiz, A.C. Mayer, G.G. Malliaras, Appl. Phys. Lett. 85 (2004) 4926; R.W.I. de Boer, M.E. Gershenson, A.F. Morpurgo, V. Podzorov, Phys. Stat. Sol. A 201 (2004) 1031]. To improve the crystal quality of the thin film many efforts were made. One of the important improvements was the surface treatment of the substrate. The tetracene thin film FET (top contact structure) was fabricated using the substrate, which was coated by a spin-coating method with a 0.1% poly α-methylstyrene (AMS) solution. The crystal quality was improved by this treatment so that the carrier mobility was higher than that of non-treatment. The maximum mobility of the AMS-treated sample was obtained to be 0.12 cm 2 /V s

Monitoring of Tumor Growth with [(18)F]-FET PET in a Mouse Model of Glioblastoma: SUV Measurements and Volumetric Approaches.

Science.gov (United States)

Holzgreve, Adrien; Brendel, Matthias; Gu, Song; Carlsen, Janette; Mille, Erik; Böning, Guido; Mastrella, Giorgia; Unterrainer, Marcus; Gildehaus, Franz J; Rominger, Axel; Bartenstein, Peter; Kälin, Roland E; Glass, Rainer; Albert, Nathalie L

2016-01-01

Noninvasive tumor growth monitoring is of particular interest for the evaluation of experimental glioma therapies. This study investigates the potential of positron emission tomography (PET) using O-(2-(18)F-fluoroethyl)-L-tyrosine ([(18)F]-FET) to determine tumor growth in a murine glioblastoma (GBM) model-including estimation of the biological tumor volume (BTV), which has hitherto not been investigated in the pre-clinical context. Fifteen GBM-bearing mice (GL261) and six control mice (shams) were investigated during 5 weeks by PET followed by autoradiographic and histological assessments. [(18)F]-FET PET was quantitated by calculation of maximum and mean standardized uptake values within a universal volume-of-interest (VOI) corrected for healthy background (SUVmax/BG, SUVmean/BG). A partial volume effect correction (PVEC) was applied in comparison to ex vivo autoradiography. BTVs obtained by predefined thresholds for VOI definition (SUV/BG: ≥1.4; ≥1.6; ≥1.8; ≥2.0) were compared to the histologically assessed tumor volume (n = 8). Finally, individual "optimal" thresholds for BTV definition best reflecting the histology were determined. In GBM mice SUVmax/BG and SUVmean/BG clearly increased with time, however at high inter-animal variability. No relevant [(18)F]-FET uptake was observed in shams. PVEC recovered signal loss of SUVmean/BG assessment in relation to autoradiography. BTV as estimated by predefined thresholds strongly differed from the histology volume. Strikingly, the individual "optimal" thresholds for BTV assessment correlated highly with SUVmax/BG (ρ = 0.97, p GBM mouse model. PVEC is beneficial to improve accuracy of [(18)F]-FET PET SUV quantification. Although SUVmax/BG and SUVmean/BG increase during the disease course, these parameters do not correlate with the respective tumor size. For the first time, we propose a histology-verified method allowing appropriate individual BTV estimation for volumetric in vivo monitoring of tumor growth

Linear algebra and linear operators in engineering with applications in Mathematica

CERN Document Server

Davis, H Ted

2000-01-01

Designed for advanced engineering, physical science, and applied mathematics students, this innovative textbook is an introduction to both the theory and practical application of linear algebra and functional analysis. The book is self-contained, beginning with elementary principles, basic concepts, and definitions. The important theorems of the subject are covered and effective application tools are developed, working up to a thorough treatment of eigenanalysis and the spectral resolution theorem. Building on a fundamental understanding of finite vector spaces, infinite dimensional Hilbert spaces are introduced from analogy. Wherever possible, theorems and definitions from matrix theory are called upon to drive the analogy home. The result is a clear and intuitive segue to functional analysis, culminating in a practical introduction to the functional theory of integral and differential operators. Numerous examples, problems, and illustrations highlight applications from all over engineering and the physical ...

Effects of trap-assisted tunneling on gate-induced drain leakage in silicon-germanium channel p-type FET for scaled supply voltages

Science.gov (United States)

Tiwari, Vishal A.; Divakaruni, Rama; Hook, Terence B.; Nair, Deleep R.

2016-04-01

Silicon-germanium is considered as an alternative channel material to silicon p-type FET (pFET) for the development of energy efficient high performance transistors for 28 nm and beyond in a high-k metal gate technology because of its lower threshold voltage and higher mobility. However, gate-induced drain leakage (GIDL) is a concern for high threshold voltage device design because of tunneling at reduced bandgap. In this work, the trap-assisted tunneling and band-to-band tunneling (BTBT) effects on GIDL is analyzed and modeled for SiGe pFETs. Experimental results and Monte Carlo simulation results reveal that the pre-halo germanium pre-amorphization implant used to contain the short channel effects contribute to GIDL at the drain sidewall in addition to GIDL due to BTBT in SiGe devices. The results are validated by comparing the experimental observations with the numerical simulation and a set of calibrated models are used to describe the GIDL mechanisms for various drain and gate bias.

Comparison of (18)F-FET and (18)F-FLT small animal PET for the assessment of anti-VEGF treatment response in an orthotopic model of glioblastoma

DEFF Research Database (Denmark)

Nedergaard, Mette Kjoelhede; Michaelsen, Signe Regner; Perryman, Lara

2016-01-01

was to compare FLT and FET PET for the assessment of anti-VEGF response in glioblastoma xenografts. METHODS: Xenografts with confirmed intracranial glioblastoma were treated with anti-VEGF therapy (B20-4.1) or saline as control. Weekly bioluminescence imaging (BLI), FLT and FET PET/CT were used to follow....... Furthermore, we found a significantly lower MVD in the anti-VEGF group as compared to the control group. However, we found no difference in the Ki67 proliferation index or mean survival time. CONCLUSION: FET appears to be a more sensitive tracer than FLT to measure early response to anti-VEGF therapy with PET...

High Precision Piezoelectric Linear Motors for Operations at Cryogenic Temperatures and Vacuum

Science.gov (United States)

Wong, D.; Carman, G.; Stam, M.; Bar-Cohen, Y.; Sen, A.; Henry, P.; Bearman, G.; Moacanin, J.

1995-01-01

The Jet Propulsion Laboratory evaluated the use of an electromechanical device for optically positioning a mirror system during the pre-project phase of the Pluto-Fast-Flyby (PFF) mission. The device under consideration was a piezoelectric driven linear motor functionally dependent upon a time varying electric field which induces displacements ranging from submicrons to millimeters with positioning accuracy within nanometers. Using a control package, the mirror system provides image motion compensation and mosaicking capabilities. While this device offers unique advantages, there were concerns pertaining to its operational capabilities for the PFF mission. The issues include irradiation effects and thermal concerns. A literature study indicated that irradiation effects will not significantly impact the linear motor's operational characteristics. On the other hand, thermal concerns necessitated an in depth study.

Interface-enhanced high-temperature superconductivity in single-unit-cell FeT e1 -xS ex films on SrTi O3

Science.gov (United States)

Li, Fangsen; Ding, Hao; Tang, Chenjia; Peng, Junping; Zhang, Qinghua; Zhang, Wenhao; Zhou, Guanyu; Zhang, Ding; Song, Can-Li; He, Ke; Ji, Shuaihua; Chen, Xi; Gu, Lin; Wang, Lili; Ma, Xu-Cun; Xue, Qi-Kun

2015-06-01

Recently discovered high-temperature superconductivity in single-unit-cell (UC) FeSe films on SrTi O3 (STO) substrate has stimulated tremendous research interest, both experimental and theoretical. Whether this scenario could be extended to other superconductors is vital in both identifying the enhanced superconductivity mechanism and further raising the critical transition temperature (Tc). Here we successfully prepared single-UC FeT e1 -xS ex(0.1 ≤x ≤0.6 ) films on STO substrates by molecular beam epitaxy and observed U -shaped superconducting gaps (Δ ) up to ˜16.5 meV , nearly ten times the gap value (Δ ˜1.7 meV ) of the optimally doped bulk FeT e0 .6S e0 .4 single crystal (Tc˜14.5 K ). No superconducting gap has been observed on the second UC and thicker FeT e1 -xS ex films at 5.7 K, indicating the important role of the interface. This interface-enhanced high-temperature superconductivity is further confirmed by ex situ transport measurements, which revealed an onset superconducting transition temperature above 40 K, nearly two times higher than that of the optimally doped bulk FeT e0 .6S e0 .4 single crystal. This work demonstrates that interface engineering is a feasible way to discover alternative superconductors with higher Tc.

Physics of Gate Modulated Resonant Tunneling (RT)-FETs: Multi-barrier MOSFET for steep slope and high on-current

Science.gov (United States)

Afzalian, Aryan; Colinge, Jean-Pierre; Flandre, Denis

2011-05-01

A new concept of nanoscale MOSFET, the Gate Modulated Resonant Tunneling Transistor (RT-FET), is presented and modeled using 3D Non-Equilibrium Green's Function simulations enlightening the main physical mechanisms. Owing to the additional tunnel barriers and the related longitudinal confinement present in the device, the density of state is reduced in its off-state, while remaining comparable in its on-state, to that of a MOS transistor without barriers. The RT-FET thus features both a lower RT-limited off-current and a faster increase of the current with V G, i.e. an improved slope characteristic, and hence an improved Ion/ Ioff ratio. Such improvement of the slope can happen in subthreshold regime, and therefore lead to subthreshold slope below the kT/q limit. In addition, faster increase of current and improved slope occur above threshold and lead to high thermionic on-current and significant Ion/ Ioff ratio improvement, even with threshold voltage below 0.2 V and supply voltage V dd of a few hundreds of mV as critically needed for future technology nodes. Finally RT-FETs are intrinsically immune to source-drain tunneling and are therefore promising candidate for extending the roadmap below 10 nm.

Impact of residual defects caused by extension ion implantation in FinFETs on parasitic resistance and its fluctuation

Science.gov (United States)

Matsukawa, Takashi; Liu, Yongxun; Mori, Takahiro; Morita, Yukinori; Otsuka, Shintaro; O'uchi, Shin-ichi; Fuketa, Hiroshi; Migita, Shinji; Masahara, Meishoku

2017-06-01

The influence of extension doping on parasitic resistance and its variability has been investigated for FinFETs. Electrical characterization of FinFETs and crystallinity evaluation of the doped fin structure are carried out for different fin thicknesses and different donor species for ion implantation, i.e., As and P. Reducing the fin thickness and the use of donor species with a larger mass cause serious degradation in the variability and median value of the parasitic resistance. Crystallinity evaluation by transmission electron microscope reveals that significant crystal defects remain after dopant activation annealing for the cases of smaller fin thickness and the implanted dopant with a larger mass. The unrecovered defects cause serious degradation in the parasitic resistance and its variability. In 1998, he joined the Electrotechnical Laboratory, which is former organization of National Institute of Advanced Industrial Science and Technology (AIST). He has been working on development of front-end process technology, variability issues of the FinFETs and technologies for suppressing the variability. He is now a group leader of the AIST and leads the research on the silicon-based CMOS devices. He is a member of the IEEE Electron Devices Society, and the Japan Society of Applied Physics.

Quantitative analysis of trap states through the behavior of the sulfur ions in MoS2 FETs following high vacuum annealing

Science.gov (United States)

Bae, Hagyoul; Jun, Sungwoo; Kim, Choong-Ki; Ju, Byeong-Kwon; Choi, Yang-Kyu

2018-03-01

Few-layer molybdenum disulfide (MoS2) has attracted a great deal of attention as a semiconductor material for electronic and optoelectronic devices. However, the presence of localized states inside the bandgap is a critical issue that must be addressed to improve the applicability of MoS2 technology. In this work, we investigated the density of states (DOS: g(E)) inside the bandgap of MoS2 FET by using a current-voltage (I-V) analysis technique with the aid of high vacuum annealing (HVA). The g(E) can be obtained by combining the trap density and surface potential (ψ S) extracted from a consistent subthreshold current (I D-sub). The electrical performance of MoS2 FETs is strongly dependent on the inherent defects, which are closely related to the g(E) in the MoS2 active layer. By applying the proposed technique to the MoS2 FETs, we were able to successfully characterize the g(E) after stabilization of the traps by the HVA, which reduces the hysteresis distorting the intrinsic g(E). Also, the change of sulfur ions in MoS2 film before and after the HVA treatment is investigated directly by Auger electron spectroscopy analysis. The proposed technique provides a new methodology for active channel engineering of 2D channel based FETs such as MoS2, MoTe2, WSe2, and WS2.

Finite-dimensional linear algebra

CERN Document Server

Gockenbach, Mark S

2010-01-01

Some Problems Posed on Vector SpacesLinear equationsBest approximationDiagonalizationSummaryFields and Vector SpacesFields Vector spaces Subspaces Linear combinations and spanning sets Linear independence Basis and dimension Properties of bases Polynomial interpolation and the Lagrange basis Continuous piecewise polynomial functionsLinear OperatorsLinear operatorsMore properties of linear operatorsIsomorphic vector spaces Linear operator equations Existence and uniqueness of solutions The fundamental theorem; inverse operatorsGaussian elimination Newton's method Linear ordinary differential eq

Silicon on ferroelectic insulator field effect transistor (SOF-FET) a new device for the next generation ultra low power circuits

Science.gov (United States)

Es-Sakhi, Azzedin D.

Field effect transistors (FETs) are the foundation for all electronic circuits and processors. These devices have progressed massively to touch its final steps in sub-nanometer level. Left and right proposals are coming to rescue this progress. Emerging nano-electronic devices (resonant tunneling devices, single-atom transistors, spin devices, Heterojunction Transistors rapid flux quantum devices, carbon nanotubes, and nanowire devices) took a vast share of current scientific research. Non-Si electronic materials like III-V heterostructure, ferroelectric, carbon nanotubes (CNTs), and other nanowire based designs are in developing stage to become the core technology of non-classical CMOS structures. FinFET present the current feasible commercial nanotechnology. The scalability and low power dissipation of this device allowed for an extension of silicon based devices. High short channel effect (SCE) immunity presents its major advantage. Multi-gate structure comes to light to improve the gate electrostatic over the channel. The new structure shows a higher performance that made it the first candidate to substitute the conventional MOSFET. The device also shows a future scalability to continue Moor's Law. Furthermore, the device is compatible with silicon fabrication process. Moreover, the ultra-low-power (ULP) design required a subthreshold slope lower than the thermionic-emission limit of 60mV/ decade (KT/q). This value was unbreakable by the new structure (SOI-FinFET). On the other hand most of the previews proposals show the ability to go beyond this limit. However, those pre-mentioned schemes have publicized a very complicated physics, design difficulties, and process non-compatibility. The objective of this research is to discuss various emerging nano-devices proposed for ultra-low-power designs and their possibilities to replace the silicon devices as the core technology in the future integrated circuit. This thesis proposes a novel design that exploits the

2D modeling based comprehensive analysis of short channel effects in DMG strained VSTB FET

Science.gov (United States)

Saha, Priyanka; Banerjee, Pritha; Sarkar, Subir Kumar

2018-06-01

The paper aims to develop two dimensional analytical model of the proposed dual material (DM) Vertical Super Thin Body (VSTB) strained Field Effect Transistor (FET) with focus on its short channel behaviour in nanometer regime. Electrostatic potential across gate/channel and dielectric wall/channel interface is derived by solving 2D Poisson's equation with parabolic approximation method by applying appropriate boundary conditions. Threshold voltage is then calculated by using the criteria of minimum surface potential considering both gate and dielectric wall side potential. Performance analysis of the present structure is demonstrated in terms of potential, electric field, threshold voltage characteristics and subthreshold behaviour by varying various device parameters and applied biases. Effect of application of strain in channel is further explored to establish the superiority of the proposed device in comparison to conventional VSTB FET counterpart. All analytical results are compared with Silvaco ATLAS device simulated data to substantiate the accuracy of our derived model.

Flexible FETs using ultrathin Si microwires embedded in solution processed dielectric and metal layers

Science.gov (United States)

Khan, S.; Yogeswaran, N.; Taube, W.; Lorenzelli, L.; Dahiya, R.

2015-12-01

This work presents a novel manufacturing route for obtaining high performance bendable field effect transistors (FET) by embedding silicon (Si) microwires (2.5 μm thick) in layers of solution-processed dielectric and metallic layers. The objective of this study is to explore heterogeneous integration of Si with polymers and to exploit the benefits of both microelectronics and printing technologies. Arrays of Si microwires are developed on silicon on insulator (SOI) wafers and transfer printed to polyimide (PI) substrate through a polydimethylsiloxane (PDMS) carrier stamp. Following the transfer printing of Si microwires, two different processing steps were developed to obtain top gate top contact and back gate top contact FETs. Electrical characterizations indicate devices having mobility as high as 117.5 cm2 V-1 s-1. The fabricated devices were also modeled using SILVACO Atlas. Simulation results show a trend in the electrical response similar to that of experimental results. In addition, a cyclic test was performed to demonstrate the reliability and mechanical robustness of the Si μ-wires on flexible substrates.

Flexible FETs using ultrathin Si microwires embedded in solution processed dielectric and metal layers

International Nuclear Information System (INIS)

Khan, S; Yogeswaran, N; Lorenzelli, L; Taube, W; Dahiya, R

2015-01-01

This work presents a novel manufacturing route for obtaining high performance bendable field effect transistors (FET) by embedding silicon (Si) microwires (2.5 μm thick) in layers of solution-processed dielectric and metallic layers. The objective of this study is to explore heterogeneous integration of Si with polymers and to exploit the benefits of both microelectronics and printing technologies. Arrays of Si microwires are developed on silicon on insulator (SOI) wafers and transfer printed to polyimide (PI) substrate through a polydimethylsiloxane (PDMS) carrier stamp. Following the transfer printing of Si microwires, two different processing steps were developed to obtain top gate top contact and back gate top contact FETs. Electrical characterizations indicate devices having mobility as high as 117.5 cm 2 V −1 s −1 . The fabricated devices were also modeled using SILVACO Atlas. Simulation results show a trend in the electrical response similar to that of experimental results. In addition, a cyclic test was performed to demonstrate the reliability and mechanical robustness of the Si μ-wires on flexible substrates. (paper)

Revisit the spin-FET: Multiple reflection, inelastic scattering, and lateral size effects

OpenAIRE

Xu, Luting; Li, Xin-Qi; Sun, Qing-feng

2014-01-01

We revisit the spin-injected field effect transistor (spin-FET) by simulating a lattice model based on recursive lattice Green's function approach. In the one-dimensional case and coherent regime, the simulated results reveal noticeable differences from the celebrated Datta-Das model, which motivate thus an improved treatment and lead to analytic and generalized result. The simulation also allows us to address inelastic scattering (using B\\"uttiker's fictitious reservoir approach) and lateral...

Operations and maintenance manual for the linear accelerator (sled)

Science.gov (United States)

1981-01-01

The Linear Accelerator, a sliding chair which is pulled along a stationary platform in a horizontal axis is described. The driving force is a motor controlled by a velocity loop amplifier, and the mechanical link to the chair is a steel cable. The chair is moved in forward and reverse directions as indicated by the direction of motor rotation. The system operation is described with emphasis on the electronic control and monitoring functions. Line-by-line schematics and wire lists are included.

Estimation of the limit of detection in semiconductor gas sensors through linearized calibration models.

Science.gov (United States)

Burgués, Javier; Jiménez-Soto, Juan Manuel; Marco, Santiago

2018-07-12

The limit of detection (LOD) is a key figure of merit in chemical sensing. However, the estimation of this figure of merit is hindered by the non-linear calibration curve characteristic of semiconductor gas sensor technologies such as, metal oxide (MOX), gasFETs or thermoelectric sensors. Additionally, chemical sensors suffer from cross-sensitivities and temporal stability problems. The application of the International Union of Pure and Applied Chemistry (IUPAC) recommendations for univariate LOD estimation in non-linear semiconductor gas sensors is not straightforward due to the strong statistical requirements of the IUPAC methodology (linearity, homoscedasticity, normality). Here, we propose a methodological approach to LOD estimation through linearized calibration models. As an example, the methodology is applied to the detection of low concentrations of carbon monoxide using MOX gas sensors in a scenario where the main source of error is the presence of uncontrolled levels of humidity. Copyright © 2018 Elsevier B.V. All rights reserved.

An OMV Vaccine Derived from a Capsular Group B Meningococcus with Constitutive FetA Expression: Preclinical Evaluation of Immunogenicity and Toxicity.

Directory of Open Access Journals (Sweden)

Gunnstein Norheim

Full Text Available Following the introduction of effective protein-polysaccharide conjugate vaccines against capsular group C meningococcal disease in Europe, meningococci of capsular group B remain a major cause of death and can result in debilitating sequelae. The outer membrane proteins PorA and FetA have previously been shown to induce bactericidal antibodies in humans. Despite considerable antigenic variation among PorA and FetA OMPs in meningococci, systematic molecular epidemiological studies revealed this variation is highly structured so that a limited repertoire of antigenic types is congruent with the hyperinvasive meningococcal lineages that have caused most of the meningococcal disease in Europe in recent decades. Here we describe the development of a prototype vaccine against capsular group B meningococcal infection based on a N. meningitidis isolate genetically engineered to have constitutive expression of the outer membrane protein FetA. Deoxycholate outer membrane vesicles (dOMVs extracted from cells cultivated in modified Frantz medium contained 21.8% PorA protein, 7.7% FetA protein and 0.03 μg LPS per μg protein (3%. The antibody response to the vaccine was tested in three mouse strains and the toxicological profile of the vaccine was tested in New Zealand white rabbits. Administration of the vaccine, MenPF-1, when given by intramuscular injection on 4 occasions over a 9 week period, was well tolerated in rabbits up to 50 μg/dose, with no evidence of systemic toxicity. These data indicated that the MenPF-1 vaccine had a toxicological profile suitable for testing in a phase I clinical trial.

A square-plate ultrasonic linear motor operating in two orthogonal first bending modes.

Science.gov (United States)

Chen, Zhijiang; Li, Xiaotian; Chen, Jianguo; Dong, Shuxiang

2013-01-01

A novel square-plate piezoelectric ultrasonic linear motor operated in two orthogonal first bending vibration modes (B₁) is proposed. The piezoelectric vibrator of the linear motor is simply made of a single PZT ceramic plate (sizes: 15 x 15 x 2 mm) and poled in its thickness direction. The top surface electrode of the square ceramic plate was divided into four active areas along its two diagonal lines for exciting two orthogonal B₁ modes. The achieved driving force and speed from the linear motor are 1.8 N and 230 mm/s, respectively, under one pair orthogonal voltage drive of 150 V(p-p) at the resonance frequency of 92 kHz. The proposed linear motor has advantages over conventional ultrasonic linear motors, such as relatively larger driving force, very simple working mode and structure, and low fabrication cost.

Maximum principles for boundary-degenerate linear parabolic differential operators

OpenAIRE

Feehan, Paul M. N.

2013-01-01

We develop weak and strong maximum principles for boundary-degenerate, linear, parabolic, second-order partial differential operators, $Lu := -u_t-\\tr(aD^2u)-\\langle b, Du\\rangle + cu$, with \\emph{partial} Dirichlet boundary conditions. The coefficient, $a(t,x)$, is assumed to vanish along a non-empty open subset, $\\mydirac_0!\\sQ$, called the \\emph{degenerate boundary portion}, of the parabolic boundary, $\\mydirac!\\sQ$, of the domain $\\sQ\\subset\\RR^{d+1}$, while $a(t,x)$ may be non-zero at po...

Static and dynamic {sup 18}F-FET PET for the characterization of gliomas defined by IDH and 1p/19q status

Energy Technology Data Exchange (ETDEWEB)

Verger, Antoine [Forschungszentrum Juelich, Institute of Neuroscience and Medicine (INM-3, INM-4, INM-5), Juelich (Germany); Lorraine University, Department of Nuclear Medicine and Nancyclotep Imaging Platform, CHRU Nancy, Nancy (France); Lorraine University, IADI, INSERM, UMR 947, Nancy (France); Service de Medecine Nucleaire, Vandoeuvre-les-Nancy (France); Stoffels, Gabriele; Lohmann, Philipp; Neumaier, Bernd [Forschungszentrum Juelich, Institute of Neuroscience and Medicine (INM-3, INM-4, INM-5), Juelich (Germany); Bauer, Elena K. [University Hospital Cologne, Department of Neurology, Cologne (Germany); Blau, Tobias [University Hospital Cologne, Department of Neuropathology, Cologne (Germany); Fink, Gereon R. [Forschungszentrum Juelich, Institute of Neuroscience and Medicine (INM-3, INM-4, INM-5), Juelich (Germany); University Hospital Cologne, Department of Neurology, Cologne (Germany); Shah, Nadim J. [Forschungszentrum Juelich, Institute of Neuroscience and Medicine (INM-3, INM-4, INM-5), Juelich (Germany); RWTH Aachen University Hospital, Department of Neurology, Aachen (Germany); Section JARA-Brain, Juelich-Aachen Research Alliance (JARA), Juelich (Germany); Langen, Karl-Josef [Forschungszentrum Juelich, Institute of Neuroscience and Medicine (INM-3, INM-4, INM-5), Juelich (Germany); Section JARA-Brain, Juelich-Aachen Research Alliance (JARA), Juelich (Germany); RWTH Aachen University Hospital, Department of Nuclear Medicine, Aachen (Germany); Galldiks, Norbert [Forschungszentrum Juelich, Institute of Neuroscience and Medicine (INM-3, INM-4, INM-5), Juelich (Germany); University Hospital Cologne, Department of Neurology, Cologne (Germany); Universities of Cologne and Bonn, Center of Integrated Oncology (CIO), Cologne (Germany)

2018-03-15

The molecular features isocitrate dehydrogenase (IDH) mutation and 1p/19q co-deletion have gained major importance for both glioma typing and prognosis and have, therefore, been integrated in the World Health Organization (WHO) classification in 2016. The aim of this study was to characterize static and dynamic O-(2-{sup 18}F-fluoroethyl)-L-tyrosine ({sup 18}F-FET) PET parameters in gliomas with or without IDH mutation or 1p/19q co-deletion. Ninety patients with newly diagnosed and untreated gliomas with a static and dynamic {sup 18}F-FET PET scan prior to evaluation of tumor tissue according to the 2016 WHO classification were identified retrospectively. Mean and maximum tumor-to-brain ratios (TBR{sub mean/max}), as well as dynamic parameters (time-to-peak and slope) of {sup 18}F-FET uptake were calculated. Sixteen (18%) oligodendrogliomas (IDH mutated, 1p/19q co-deleted), 27 (30%) astrocytomas (IDH mutated only), and 47 (52%) glioblastomas (IDH wild type only) were identified. TBR{sub mean}, TBR{sub max}, TTP and slope discriminated between IDH mutated astrocytomas and IDH wild type glioblastomas (P < 0.01). TBR{sub mean} showed the best diagnostic performance (cut-off 1.95; sensitivity, 89%; specificity, 67%; accuracy, 81%). None of the parameters discriminated between oligodendrogliomas (IDH mutated, 1p/19q co-deleted) and glioblastomas or astrocytomas. Furthermore, TBR{sub mean}, TBR{sub max}, TTP, and slope discriminated between gliomas with and without IDH mutation (p < 0.01). The best diagnostic performance was obtained for the combination of TTP with TBR{sub max} or slope (accuracy, 73%). Data suggest that static and dynamic {sup 18}F-FET PET parameters may allow determining non-invasively the IDH mutation status. However, IDH mutated and 1p/19q co-deleted oligodendrogliomas cannot be differentiated from glioblastomas and astrocytomas by {sup 18}F-FET PET. (orig.)

Connection between perturbation theory, projection-operator techniques, and statistical linearization for nonlinear systems

International Nuclear Information System (INIS)

Budgor, A.B.; West, B.J.

1978-01-01

We employ the equivalence between Zwanzig's projection-operator formalism and perturbation theory to demonstrate that the approximate-solution technique of statistical linearization for nonlinear stochastic differential equations corresponds to the lowest-order β truncation in both the consolidated perturbation expansions and in the ''mass operator'' of a renormalized Green's function equation. Other consolidated equations can be obtained by selectively modifying this mass operator. We particularize the results of this paper to the Duffing anharmonic oscillator equation

Spectral theory of linear operators and spectral systems in Banach algebras

CERN Document Server

Müller, Vladimir

2003-01-01

This book is dedicated to the spectral theory of linear operators on Banach spaces and of elements in Banach algebras. It presents a survey of results concerning various types of spectra, both of single and n-tuples of elements. Typical examples are the one-sided spectra, the approximate point, essential, local and Taylor spectrum, and their variants. The theory is presented in a unified, axiomatic and elementary way. Many results appear here for the first time in a monograph. The material is self-contained. Only a basic knowledge of functional analysis, topology, and complex analysis is assumed. The monograph should appeal both to students who would like to learn about spectral theory and to experts in the field. It can also serve as a reference book. The present second edition contains a number of new results, in particular, concerning orbits and their relations to the invariant subspace problem. This book is dedicated to the spectral theory of linear operators on Banach spaces and of elements in Banach alg...

Linear inequalities and overlap bounds: a novel use of an operator inequality

International Nuclear Information System (INIS)

Cohen, M.; Leopold, J.G.

1976-01-01

Bounds to overlap integrals are obtained by an operator inequality technique. The formulation involves a set of linear inequalities with several overlap integrals as unknowns. The 'solution' of this set of inequalities leads to bound expressions which complement those of other workers. (author)

Storage and distribution/Linear programming for storage operations

Energy Technology Data Exchange (ETDEWEB)

Coleman, D

1978-07-15

The techniques of linear programing to solve storage problems as applied in a tank farm tie-in with refinery throughput operation include: (1) the time-phased model which works on storage and refinery operations input parameters, e.g., production, distribution, cracking, etc., and is capable of representing product stockpiling in slack periods to meet future peak demands, and investigating alternative strategies such as exchange deals and purchase and leasing of additional storage, and (2) the Monte Carlo simulation method, which inputs parameters, e.g., arrival of crude products at refinery, tankage size, likely demand for products, etc., as probability distributions rather than single values, and is capable of showing the average utilization of facilities, potential bottlenecks, investment required to achieve an increase in utilization, and to enable the user to predict total investment, cash flow, and profit emanating from the original financing decision. The increasing use of computer techniques to solve refinery and storage problems is attributed to potential savings resulting from more effective planning, reduced computer costs, ease of access and more usable software. Diagrams.

DotFETs : MOSFETs strained by a Single SiGE dot in a Low-Temperature ELA Technology

NARCIS (Netherlands)

Biasotto, C.

2011-01-01

The work presented in this thesis was performed in the context of the European Sixth Framework Program FP6 project “Disposable Dot Field Effect Transistor for High Speed Si Integrated Circuits”, referred to as the D-DotFET project. The project had the goal of realizing strain-enhanced mobility in

Wigner weight functions and Weyl symbols of non-negative definite linear operators

NARCIS (Netherlands)

Janssen, A.J.E.M.

1989-01-01

In this paper we present several necessary and, for radially symmetric functions, necessary and sufficient conditions for a function of two variables to be a Wigner weight function (Weyl symbol of a non-negative definite linear operator of L2(R)). These necessary conditions are in terms of spread

La Grande Guerre des préfets de Maine-et-Loire

OpenAIRE

Jacobzone, Alain

2015-01-01

La première guerre mondiale est un conflit de type nouveau qui implique la mise en œuvre totale et permanente pendant plus de quatre années de toutes les énergies nationales. Dans cette mobilisation tous azimuts les préfets sont naturellement appelés à jouer un rôle essentiel qui les entraîne, avec une bonne part d’improvisation tant la situation présente des caractères inédits, à intervenir dans tous les domaines de la vie politique, économique et sociale, plus systématiquement et surtout pl...

Performance Evaluation of an Automotive-Grade, High Speed Gate Driver for SiC FETs, Type UCC27531, Over a Wide Temperature Range

Science.gov (United States)

Boomer, Kristen; Hammoud, Ahmad

2015-01-01

Silicon carbide (SiC) devices are becoming widely used in electronic power circuits as replacement for conventional silicon parts due to their attractive properties that include low on-state resistance, high temperature tolerance, and high frequency operation. These attributes have a significant impact by reducing system weight, saving board space, and conserving power. In this work, the performance of an automotive-grade high speed gate driver with potential use in controlling SiC FETs (field-Effect Transistors) in converters or motor control applications was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to assess performance and to determine suitability of this device for use in space exploration missions under extreme temperature conditions.

Approximation Theorems for q- Analouge of a Linear Positive Operator by A. Lupas

Directory of Open Access Journals (Sweden)

Karunesh Kumar Singh

2016-08-01

Full Text Available The purpose of the present paper is to introduce $q-$ analouge of a sequence of linear and positive operators which was introduced by A. Lupas [2]. First, we estimate moments of the operators and then prove a basic convergence theorem. Next, a local direct approximation theorem is established. Further, we study the rate of convergence and point-wise estimate using the Lipschitz type maximal function.

Investigations on heavy ion induced Single-Event Transients (SETs) in highly-scaled FinFETs

Energy Technology Data Exchange (ETDEWEB)

Gaillardin, M., E-mail: marc.gaillardin@cea.fr [CEA, DAM, DIF, F-91297 Arpajon (France); Raine, M.; Paillet, P. [CEA, DAM, DIF, F-91297 Arpajon (France); Adell, P.C. [Jet Propulsion Laboratory, Pasadena, CA 91101 (United States); Girard, S. [Université de Saint-Etienne, Laboratoire H. Curien, UMR-5516, 42000 Saint-Etienne (France); Duhamel, O. [CEA, DAM, DIF, F-91297 Arpajon (France); Andrieu, F.; Barraud, S.; Faynot, O. [CEA, LETI-Minatec, 17 avenue des Martyrs, 38000 Grenoble (France)

2015-12-15

We investigate Single-Event Transients (SET) in different designs of multiple-gate devices made of FinFETs with various geometries. Heavy ion experimental results are explained by using a thorough charge collection analysis of fast transients measured on dedicated test structures. Multi-level simulations are performed to get new insights into the charge collection mechanisms in multiple-gate devices. Implications for multiple-gate device design hardening are finally discussed.

Early static {sup 18}F-FET-PET scans have a higher accuracy for glioma grading than the standard 20-40 min scans

Energy Technology Data Exchange (ETDEWEB)

Albert, Nathalie L.; Winkelmann, Isabel; Wenter, Vera; Mille, Erik; Todica, Andrei; Brendel, Matthias; Bartenstein, Peter [Ludwig-Maximilians-University Munich, Department of Nuclear Medicine, Munich (Germany); Suchorska, Bogdana; Tonn, Joerg-Christian [Ludwig-Maximilians-University Munich, Department of Neurosurgery, Munich (Germany); Schmid-Tannwald, Christine [Ludwig-Maximilians-University Munich, Institute for Clinical Radiology, Munich (Germany); La Fougere, Christian [University of Tuebingen, Division of Nuclear Medicine and Clinical Molecular Imaging, Department of Radiology, Tuebingen (Germany)

2016-06-15

Current guidelines for glioma imaging by positron emission tomography (PET) using the amino acid analogue O-(2-[{sup 18}F]fluoroethyl)-L-tyrosine ({sup 18}F-FET) recommend image acquisition from 20-40 min post injection (p.i.). The maximal tumour-to-background evaluation (TBR{sub max}) obtained in these summation images does not enable reliable differentiation between low and high grade glioma (LGG and HGG), which, however, can be achieved by dynamic {sup 18}F-FET-PET. We investigated the accuracy of tumour grading using TBR{sub max} values at different earlier time points after tracer injection. Three hundred and fourteen patients with histologically proven primary diagnosis of glioma (131 LGG, 183 HGG) who had undergone 40-min dynamic {sup 18}F-FET-PET scans were retrospectively evaluated. TBR{sub max} was assessed in the standard 20-40 min summation images, as well as in summation images from 0-10 min, 5-15 min, 5-20 min, and 15-30 min p.i., and kinetic analysis was performed. TBR{sub max} values and kinetic analysis were correlated with histological classification. ROC analyses were performed for each time frame and sensitivity, specificity, and accuracy were assessed. TBR{sub max} values in the earlier summation images were significantly better for tumour grading (P < 0.001) when compared to standard 20-40 min scans, with best results for the early 5-15 min scan. This was due to higher TBR{sub max} in the HGG (3.9 vs. 3.3; p < 0.001), while TBR{sub max} remained nearly stable in the LGG (2.2 vs. 2.1). Overall, accuracy increased from 70 % in the 20-40 min analysis to 77 % in the 5-15 min images, but did not reach the accuracy of dynamic analysis (80 %). Early TBR{sub max} assessment (5-15 min p.i.) is more accurate for the differentiation between LGG and HGG than the standard static scan (20-40 min p.i.) mainly caused by the characteristic high {sup 18}F-FET uptake of HGG in the initial phase. Therefore, when dynamic {sup 18}F-FET-PET cannot be performed

Self-Assembled Films of Dendrimers and Metallophthalocyanines as FET-Based Glucose Biosensors

Directory of Open Access Journals (Sweden)

Alessandra Figueiredo

2011-10-01

Full Text Available Separative extended gate field effect transistor (SEGFET type devices have been used as an ion sensor or biosensor as an alternative to traditional ion sensitive field effect transistors (ISFETs due to their robustness, ease of fabrication, low cost and possibility of FET isolation from the chemical environment. The layer-by-layer technique allows the combination of different materials with suitable properties for enzyme immobilization on simple platforms such as the extended gate of SEGFET devices enabling the fabrication of biosensors. Here, glucose biosensors based on dendrimers and metallophthalocyanines (MPcs in the form of layer-by-layer (LbL films, assembled on indium tin oxide (ITO as separative extended gate material, has been produced. NH3+ groups in the dendrimer allow electrostatic interactions or covalent bonds with the enzyme (glucose oxidase. Relevant parameters such as optimum pH, buffer concentration and presence of serum bovine albumin (BSA in the immobilization process were analyzed. The relationship between the output voltage and glucose concentration shows that upon detection of a specific analyte, the sub-products of the enzymatic reaction change the pH locally, affecting the output signal of the FET transducer. In addition, dendritic layers offer a nanoporous environment, which may be permeable to H+ ions, improving the sensibility as modified electrodes for glucose biosensing.

Graphene-Based FET Detector for E. coli K12 Real-Time Monitoring and Its Theoretical Analysis

Directory of Open Access Journals (Sweden)

Jieyi Zhu

2016-01-01

Full Text Available This paper presents a theoretical analysis for a graphene-based FET real-time detector of the target bacteria E. coli K12. The motivation for this study is to design a sensor device for detection of bacteria in food and water in order to guarantee food safety. Graphene is chosen as our material for sensor design, which has outstanding electrical, physical, and optical performance. In our sensor structure, graphene-based solution gate field effect transistor (FET is the device model; fabrication and functionalization protocol are presented together in this paper. What is more, a real-time signal display system is the accompanied equipment for our designed biosensor device. In this system, the sensor bias current signal Ids would change obviously when the target bacteria are attached to the sensor surface. And the bias current Ids increases when the E. coli concentration increases. In the latter part, a theoretical interpretation of the sensor signal is to explain the bias current Ids increasing after the E. coli K12 attachment.

Improved integration of ultra-thin high-k dielectrics in few-layer MoS2 FET by remote forming gas plasma pretreatment

Science.gov (United States)

Wang, Xiao; Zhang, Tian-Bao; Yang, Wen; Zhu, Hao; Chen, Lin; Sun, Qing-Qing; Zhang, David Wei

2017-01-01

The effective and high-quality integration of high-k dielectrics on two-dimensional (2D) crystals is essential to the device structure engineering and performance improvement of field-effect transistor (FET) based on the 2D semiconductors. We report a 2D MoS2 transistor with ultra-thin Al2O3 top-gate dielectric (6.1 nm) and extremely low leakage current. Remote forming gas plasma pretreatment was carried out prior to the atomic layer deposition, providing nucleation sites with the physically adsorbed ions on the MoS2 surface. The top gate MoS2 FET exhibited excellent electrical performance, including high on/off current ratio over 109, subthreshold swing of 85 mV/decade and field-effect mobility of 45.03 cm2/V s. Top gate leakage current less than 0.08 pA/μm2 at 4 MV/cm has been obtained, which is the smallest compared with the reported top-gated MoS2 transistors. Such an optimized integration of high-k dielectric in 2D semiconductor FET with enhanced performance is very attractive, and it paves the way towards the realization of more advanced 2D nanoelectronic devices and integrated circuits.

Approach to assurance of reliability of linear accelerator operation observations

International Nuclear Information System (INIS)

Bakov, S.M.; Borovikov, A.A.; Kavkun, S.L.

1994-01-01

The system approach to solving the task of assuring reliability of observations over the linear accelerator operation is proposed. The basic principles of this method consist in application of dependences between the facility parameters, decrease in the number of the system apparatus channels for data acquisition without replacement of failed channel by reserve one. The signal commutation unit, the introduction whereof into the data acquisition system essentially increases the reliability of the measurement system on the account of active reserve, is considered detail. 8 refs. 6 figs

Investigation of a Brazilian tannery effluent by means of zebra fish (Danio rerio) embryo acute toxicity (FET) test.

Science.gov (United States)

Rocha, Otávio Pelegrino; De Oliveira, Danielle Palma

2017-01-01

Tannery effluents consist of a complex chemical composition not only limited to primary pollutants, which also require biological detection as these compounds may produce adverse effects. The fish embryo toxicity (FET) test with Danio rerio is an alternative method in hazard and risk assessment for determination of chemical-mediated effects. The aim of this investigation was to use the FET test to detect compounds and consequent effects in Brazilian tannery effluents. Samples were collected from the inlet and outlet of the effluent treatment plant at a tannery located in Restinga, São Paulo, Brazil. The toxicological effects were assessed using FET assay for a period of 144 hr using indices such as (1) coagulation of fertilized eggs, (2) lack of detachment of tail-bud from yolk sac, (3) absence of spontaneous movement, (4) yolk sack edema, (5) malformation of the tail, (6) scoliosis, and (7) deformation of swim bladder in the embryos. Data showed that effluent treatment plant exposure produced acute toxicity in D. rerio embryos as evidenced by coagulation of fertilized eggs in up to 5% of all diluted samples 24 hr post fertilization for inlet effluent samples compared to 100% coagulation for outlet samples. Results demonstrated that these effects may not be attributed to metals, but to other non-detected components, such as dyes, pigments, biocides, carriers, surfactants, or other organic compounds that might be present in these complex mixtures. The use of D. rerio embryos was found to be useful as an additional tool for ecotoxicity testing to assess the potential environmental acute toxicity influence of tannery effluents.

Optimal offering and operating strategies for wind-storage systems with linear decision rules

DEFF Research Database (Denmark)

Ding, Huajie; Pinson, Pierre; Hu, Zechun

2016-01-01

The participation of wind farm-energy storage systems (WF-ESS) in electricity markets calls for an integrated view of day-ahead offering strategies and real-time operation policies. Such an integrated strategy is proposed here by co-optimizing offering at the day-ahead stage and operation policy...... to be used at the balancing stage. Linear decision rules are seen as a natural approach to model and optimize the real-time operation policy. These allow enhancing profits from balancing markets based on updated information on prices and wind power generation. Our integrated strategies for WF...

Analysis of the linear induction motor in transient operation

Energy Technology Data Exchange (ETDEWEB)

Gentile, G; Rotondale, N; Scarano, M

1987-05-01

The paper deals with the analysis of a bilateral linear induction motor in transient operation. We have considered an impressed voltage one-dimensional model which takes into account end effects. The real winding distribution of the armature has been represented as a lumped parameters system. By using the space vectors methodology, the partial differential equation of the sheet is solved bythe variable separation method. Therefore it's possible to arrange a system of ordinary differential equations where the unknown quantities are the space vectors of the air-gap flux density and sheet currents. Finally, we have analyzed the characteristic quantities for a no-load starting of small power motors.

The synthesis of 18F-labelled amino acid O-(2-[18F]fluoroethyl)-L-tyrosine (FET) in NPI

Czech Academy of Sciences Publication Activity Database

Švecová, Helena; Procházka, Libor; Fedorova, S.; Kropáček, Martin; Melichar, František

2007-01-01

Roč. 2, č. 331 (2007), s. 34-34 ISSN 1619-7070 R&D Projects: GA MPO 2A-1TP1/055 Institutional research plan: CEZ:AV0Z10480505 Keywords : [18F]FET * PET * tumor imaging Subject RIV: FR - Pharmacology ; Medidal Chemistry

Radiation injury vs. recurrent brain metastasis: combining textural feature radiomics analysis and standard parameters may increase {sup 18}F-FET PET accuracy without dynamic scans

Energy Technology Data Exchange (ETDEWEB)

Lohmann, Philipp; Stoffels, Gabriele; Stegmayr, Carina; Neumaier, Bernd [Forschungszentrum Juelich, Institute of Neuroscience and Medicine, Juelich (Germany); Ceccon, Garry [University of Cologne, Department of Neurology, Cologne (Germany); Rapp, Marion; Sabel, Michael; Kamp, Marcel A. [Heinrich Heine University Duesseldorf, Department of Neurosurgery, Duesseldorf (Germany); Filss, Christian P. [Forschungszentrum Juelich, Institute of Neuroscience and Medicine, Juelich (Germany); RWTH Aachen University Hospital, Department of Nuclear Medicine, Aachen (Germany); Shah, Nadim J. [Forschungszentrum Juelich, Institute of Neuroscience and Medicine, Juelich (Germany); RWTH Aachen University Hospital, Department of Neurology, Aachen (Germany); Juelich-Aachen Research Alliance (JARA) - Section JARA-Brain, Department of Neurology, Juelich (Germany); Langen, Karl-Josef [Forschungszentrum Juelich, Institute of Neuroscience and Medicine, Juelich (Germany); RWTH Aachen University Hospital, Department of Nuclear Medicine, Aachen (Germany); Juelich-Aachen Research Alliance (JARA) - Section JARA-Brain, Department of Neurology, Juelich (Germany); Galldiks, Norbert [Forschungszentrum Juelich, Institute of Neuroscience and Medicine, Juelich (Germany); University of Cologne, Department of Neurology, Cologne (Germany); University of Cologne, Center of Integrated Oncology (CIO), Cologne (Germany)

2017-07-15

We investigated the potential of textural feature analysis of O-(2-[{sup 18}F]fluoroethyl)-L-tyrosine ({sup 18}F-FET) PET to differentiate radiation injury from brain metastasis recurrence. Forty-seven patients with contrast-enhancing brain lesions (n = 54) on MRI after radiotherapy of brain metastases underwent dynamic {sup 18}F-FET PET. Tumour-to-brain ratios (TBRs) of {sup 18}F-FET uptake and 62 textural parameters were determined on summed images 20-40 min post-injection. Tracer uptake kinetics, i.e., time-to-peak (TTP) and patterns of time-activity curves (TAC) were evaluated on dynamic PET data from 0-50 min post-injection. Diagnostic accuracy of investigated parameters and combinations thereof to discriminate between brain metastasis recurrence and radiation injury was compared. Diagnostic accuracy increased from 81 % for TBR{sub mean} alone to 85 % when combined with the textural parameter Coarseness or Short-zone emphasis. The accuracy of TBR{sub max} alone was 83 % and increased to 85 % after combination with the textural parameters Coarseness, Short-zone emphasis, or Correlation. Analysis of TACs resulted in an accuracy of 70 % for kinetic pattern alone and increased to 83 % when combined with TBR{sub max}. Textural feature analysis in combination with TBRs may have the potential to increase diagnostic accuracy for discrimination between brain metastasis recurrence and radiation injury, without the need for dynamic {sup 18}F-FET PET scans. (orig.)

TU-H-BRA-06: Characterization of a Linear Accelerator Operating in a Compact MRIGuided Radiation Therapy System

International Nuclear Information System (INIS)

Green, O; Mutic, S; Li, H; Low, D; Chmielewski, T; Fought, G; Hernandez, M; Kawrakow, I; Sharma, A; Shvartsman, S; Dempsey, J

2016-01-01

Purpose: To describe the performance of a linear accelerator operating in a compact MRI-guided radiation therapy system. Methods: A commercial linear accelerator was placed in an MRI unit that is employed in a commercial MR-based image guided radiation therapy (IGRT) system. The linear accelerator components were placed within magnetic field-reducing hardware that provided magnetic fields of less than 40 G for the magnetron, gun driver, and port circulator, with 1 G for the linear accelerator. The system did not employ a flattening filter. The test linear accelerator was an industrial 4 MV model that was employed to test the ability to run an accelerator in the MR environment. An MR-compatible diode detector array was used to measure the beam profiles with the accelerator outside and inside the MR field and with the gradient coils on and off to examine if there was any effect on the delivered dose distribution. The beam profiles and time characteristics of the beam were measured. Results: The beam profiles exhibited characteristic unflattened Bremsstrahlung features with less than ±1.5% differences in the profile magnitude when the system was outside and inside the magnet and less than 1% differences with the gradient coils on and off. The central axis dose rate fluctuated by less than 1% over a 30 second period when outside and inside the MRI. Conclusion: A linaccompatible MR design has been shown to be effective in not perturbing the operation of a commercial linear accelerator. While the accelerator used in the tests was 4MV, there is nothing fundamentally different with the operation of a 6MV unit, implying that the design will enable operation of the proposed clinical unit. Research funding provided by ViewRay, Inc.

TU-H-BRA-06: Characterization of a Linear Accelerator Operating in a Compact MRIGuided Radiation Therapy System

Energy Technology Data Exchange (ETDEWEB)

Green, O; Mutic, S; Li, H [Washington University School of Medicine, St. Louis, MO (United States); Low, D [University of California, Los Angeles, CA (United States); Chmielewski, T; Fought, G; Hernandez, M; Kawrakow, I; Sharma, A; Shvartsman, S; Dempsey, J [ViewRay, Inc., Oakwood Village, OH (United States)

2016-06-15

Purpose: To describe the performance of a linear accelerator operating in a compact MRI-guided radiation therapy system. Methods: A commercial linear accelerator was placed in an MRI unit that is employed in a commercial MR-based image guided radiation therapy (IGRT) system. The linear accelerator components were placed within magnetic field-reducing hardware that provided magnetic fields of less than 40 G for the magnetron, gun driver, and port circulator, with 1 G for the linear accelerator. The system did not employ a flattening filter. The test linear accelerator was an industrial 4 MV model that was employed to test the ability to run an accelerator in the MR environment. An MR-compatible diode detector array was used to measure the beam profiles with the accelerator outside and inside the MR field and with the gradient coils on and off to examine if there was any effect on the delivered dose distribution. The beam profiles and time characteristics of the beam were measured. Results: The beam profiles exhibited characteristic unflattened Bremsstrahlung features with less than ±1.5% differences in the profile magnitude when the system was outside and inside the magnet and less than 1% differences with the gradient coils on and off. The central axis dose rate fluctuated by less than 1% over a 30 second period when outside and inside the MRI. Conclusion: A linaccompatible MR design has been shown to be effective in not perturbing the operation of a commercial linear accelerator. While the accelerator used in the tests was 4MV, there is nothing fundamentally different with the operation of a 6MV unit, implying that the design will enable operation of the proposed clinical unit. Research funding provided by ViewRay, Inc.

Maximum principles for boundary-degenerate second-order linear elliptic differential operators

OpenAIRE

Feehan, Paul M. N.

2012-01-01

We prove weak and strong maximum principles, including a Hopf lemma, for smooth subsolutions to equations defined by linear, second-order, partial differential operators whose principal symbols vanish along a portion of the domain boundary. The boundary regularity property of the smooth subsolutions along this boundary vanishing locus ensures that these maximum principles hold irrespective of the sign of the Fichera function. Boundary conditions need only be prescribed on the complement in th...

Double-gated Si NW FET sensors: Low-frequency noise and photoelectric properties

International Nuclear Information System (INIS)

Gasparyan, F.; Khondkaryan, H.; Arakelyan, A.; Zadorozhnyi, I.; Pud, S.; Vitusevich, S.

2016-01-01

The transport, noise, and photosensitivity properties of an array of silicon nanowire (NW) p"+-p-p"+ field-effect transistors (FETs) are investigated. The peculiarities of photosensitivity and detectivity are analyzed over a wide spectrum range. The absorbance of p-Si NW shifts to the short wavelength region compared with bulk Si. The photocurrent and photosensitivity reach increased values in the UV range of the spectrum at 300 K. It is shown that sensitivity values can be tuned by the drain-source voltage and may reach record values of up to 2–4 A/W at a wavelength of 300 nm at room temperature. Low-frequency noise studies allow calculating the photodetectivity values, which increase with decreasing wavelength down to 300 nm. We show that the drain current of Si NW biochemical sensors substantially depends on pH value and the signal-to-noise ratio reaches the high value of 10"5. Increasing pH sensitivity with gate voltage is revealed for certain source-drain currents of pH-sensors based on Si NW FETs. The noise characteristic index decreases from 1.1 to 0.7 with the growth of the liquid gate voltage. Noise behavior is successfully explained in the framework of the correlated number-mobility unified fluctuation model. pH sensitivity increases as a result of the increase in liquid gate voltage, thus giving the opportunity to measure very low proton concentrations in the electrolyte medium at certain values of the liquid gate voltage.

Non-linear operation of nanomechnical systems combining photothermal excitation and magneto-motive detection

International Nuclear Information System (INIS)

Koenig, Daniel R; Metzger, Constanze; Camerer, Stephan; Kotthaus, Joerg P

2006-01-01

We present a non-linear operation of a nanomechanical beam resonator by photothermal excitation at 4 K. The resonators dimensions are 10 μm in length, 200 nm in width, and 200 nm in height. The actuation mechanism is based on a pulsed diode laser focused onto the centre of the beam resonator. Thermally induced stress caused by the different thermal expansion coefficients of the bi-layer system periodically deflects the resonator. Magnetomotively detected amplitudes up to 150 nm are reached at the fundamental resonance mode at a frequency of 8.9 MHz. Furthermore, the third eigenmode of the resonator at a frequency 36 MHz is also excited. We conclude that the photothermal excitation at 4 K should be applicable up to the GHz regime, the operation in the non-linear regime can be used for performance enhancement of nanomechanical systems, and the combination of photothermal excitation and magneto-motive detection avoids undesired cross talk

RESOLUTE PET/MRI Attenuation Correction for O-(2-F-fluoroethyl)-L-tyrosine (FET) in Brain Tumor Patients with Metal Implants

DEFF Research Database (Denmark)

Ladefoged, Claes N; Andersen, Flemming L; Kjær, Andreas

2017-01-01

of agreement for TMAX/B was for RESOLUTE (-3%; 4%), Dixon (-9%; 16%), and UTE (-7%; 10%). The absolute error when measuring BTV was 0.7 ± 1.9 mL (N.S) with RESOLUTE, 5.3 ± 10 mL using Dixon, and 1.7 ± 3.7 mL using UTE. RESOLUTE performed best in the identification of the location of peak activity and in brain...... to be quantitatively correct in order to be used clinically, which require accurate attenuation correction (AC) in PET/MRI. The aim of this study was to evaluate the use of the subject-specific MR-derived AC method RESOLUTE in post-operative brain tumor patients.Methods:We analyzed 51 post-operative brain tumor...... patients (68 examinations, 200 MBq [18F]-FET) investigated in a PET/MRI scanner. MR-AC maps were acquired using: (1) the Dixon water fat separation sequence, (2) the ultra short echo time (UTE) sequences, (3) calculated using our new RESOLUTE methodology, and (4) a same day low-dose CT used as reference...

High mobility and high concentration Type-III heterojunction FET

Science.gov (United States)

Tsu, R.; Fiddy, M. A.; Her, T.

2018-02-01

The PN junction was introduced in transistors by doping, resulting in high losses due to Coulomb scattering from the dopants. The MOSFET introduced carriers in the form of electrons and holes with an applied bias to the oxide barrier, resulting in carrier transfer without doping. This avoids high scattering losses and dominates the IC industries. With heterojunctions having valence-band maxima near and even above the conduction-band minimum in the formation of Type-III superlattices, very useful devices, introduced by Tsu, Sai-Halacz, and Esaki, soon followed. If the layer thicknesses are more than the carrier mean-free-path, incoherent scattering results in the formation of carrier transfer via diffusion instead of opening up new energy gaps. The exploitation of carriers without scattering represents a new and significant opportunity in what we call a Broken Gap Heterojunction FET.

Linearly Recurrent Circle Map Subshifts and an Application to Schrödinger Operators

CERN Document Server

Adamczewski, B

2001-01-01

We discuss circle map sequences and subshifts generated by them. We give a characterization of those sequences among them which are linearly recurrent. As an application we deduce zero-measure spectrum for a class of discrete one-dimensional Schrödinger operators with potentials generated by circle maps.

The linear-non-linear frontier for the Goldstone Higgs

International Nuclear Information System (INIS)

Gavela, M.B.; Saa, S.; Kanshin, K.; Machado, P.A.N.

2016-01-01

The minimal SO(5)/SO(4) σ-model is used as a template for the ultraviolet completion of scenarios in which the Higgs particle is a low-energy remnant of some high-energy dynamics, enjoying a (pseudo) Nambu-Goldstone-boson ancestry. Varying the σ mass allows one to sweep from the perturbative regime to the customary non-linear implementations. The low-energy benchmark effective non-linear Lagrangian for bosons and fermions is obtained, determining as well the operator coefficients including linear corrections. At first order in the latter, three effective bosonic operators emerge which are independent of the explicit soft breaking assumed. The Higgs couplings to vector bosons and fermions turn out to be quite universal: the linear corrections are proportional to the explicit symmetry-breaking parameters. Furthermore, we define an effective Yukawa operator which allows a simple parametrization and comparison of different heavy-fermion ultraviolet completions. In addition, one particular fermionic completion is explored in detail, obtaining the corresponding leading low-energy fermionic operators. (orig.)

The linear-non-linear frontier for the Goldstone Higgs

Energy Technology Data Exchange (ETDEWEB)

Gavela, M.B.; Saa, S. [IFT-UAM/CSIC, Universidad Autonoma de Madrid, Departamento de Fisica Teorica y Instituto de Fisica Teorica, Madrid (Spain); Kanshin, K. [Universita di Padova, Dipartimento di Fisica e Astronomia ' G. Galilei' , Padua (Italy); INFN, Padova (Italy); Machado, P.A.N. [IFT-UAM/CSIC, Universidad Autonoma de Madrid, Departamento de Fisica Teorica y Instituto de Fisica Teorica, Madrid (Spain); Fermi National Accelerator Laboratory, Theoretical Physics Department, Batavia, IL (United States)

2016-12-15

The minimal SO(5)/SO(4) σ-model is used as a template for the ultraviolet completion of scenarios in which the Higgs particle is a low-energy remnant of some high-energy dynamics, enjoying a (pseudo) Nambu-Goldstone-boson ancestry. Varying the σ mass allows one to sweep from the perturbative regime to the customary non-linear implementations. The low-energy benchmark effective non-linear Lagrangian for bosons and fermions is obtained, determining as well the operator coefficients including linear corrections. At first order in the latter, three effective bosonic operators emerge which are independent of the explicit soft breaking assumed. The Higgs couplings to vector bosons and fermions turn out to be quite universal: the linear corrections are proportional to the explicit symmetry-breaking parameters. Furthermore, we define an effective Yukawa operator which allows a simple parametrization and comparison of different heavy-fermion ultraviolet completions. In addition, one particular fermionic completion is explored in detail, obtaining the corresponding leading low-energy fermionic operators. (orig.)

Addressing FinFET metrology challenges in 1X node using tilt-beam CD-SEM

Science.gov (United States)

Zhang, Xiaoxiao; Zhou, Hua; Ge, Zhenhua; Vaid, Alok; Konduparthi, Deepasree; Osorio, Carmen; Ventola, Stefano; Meir, Roi; Shoval, Ori; Kris, Roman; Adan, Ofer; Bar-Zvi, Maayan

2014-04-01

At 1X node, 3D FinFETS raise a number of new metrology challenges. Gate height and fin height are two of the most important parameters for process control. At present there is a metrology gap in inline in-die measurement of these parameters. In order to fill this metrology gap, in-column beam tilt has been developed and implemented on Applied Materials V4i+ top-down CD-SEM for height measurement. A low tilt (5°) beam and a high tilt (14°) beam have been calibrated to obtain two sets of images providing measurement of sidewall edge width to calculate height in the host. Evaluations are done with applications in both gate height and fin height. TEM correlation with R2 being 0.89 and precision of 0.81nm have been achieved on various in-die features in gate height application. Fin height measurement shows less accuracy (R2 being 0.77) and precision (1.49 nm) due to challenges brought by fin geometry, yet still promising as first attempt. Sensitivity to DOE offset, die-to-die and in-die variation is demonstrated in both gate height and fin height. Process defect is successfully captured from inline wafers with gate height measurement implemented in production. This is the first successful demonstration of inline in-die gate height measurement for 14nm FinFET process control.

A temperature and mass dependence of the linear Boltzmann collision operator from group theory point of view

International Nuclear Information System (INIS)

Saveliev, V.

1996-01-01

The Lie group of the transformations affecting the parameters of the linear Boltzmann collision operator such as temperature of background gas and ratio of masses of colliding particles and molecules is discovered. The group also describes the conservation laws for collisions and main symmetries of the collision operator. New algebraic properties of the collision operator are derived. Transformations acting on the variables and parameters and leaving the linear Boltzmann kinetic equation invariant are found. For the constant collision frequency the integral representation of solutions for nonuniform case in terms of the distribution function of particles drifting in a gas with zero temperature is deduced. The new exact relaxation solutions are obtained too. copyright 1996 American Institute of Physics

Simulation of nucleation and growth of atomic layer deposition phosphorus for doping of advanced FinFETs

International Nuclear Information System (INIS)

Seidel, Thomas E.; Goldberg, Alexander; Halls, Mat D.; Current, Michael I.

2016-01-01

Simulations for the nucleation and growth of phosphorus films were carried out using density functional theory. The surface was represented by a Si 9 H 12 truncated cluster surface model with 2 × 1-reconstructured (100) Si-OH terminations for the initial reaction sites. Chemistries included phosphorous halides (PF 3 , PCl 3 , and PBr 3 ) and disilane (Si 2 H 6 ). Atomic layer deposition (ALD) reaction sequences were illustrated with three-dimensional molecular models using sequential PF 3 and Si 2 H 6 reactions and featuring SiFH 3 as a byproduct. Exothermic reaction pathways were developed for both nucleation and growth for a Si-OH surface. Energetically favorable reactions for the deposition of four phosphorus atoms including lateral P–P bonding were simulated. This paper suggests energetically favorable thermodynamic reactions for the growth of elemental phosphorus on (100) silicon. Phosphorus layers made by ALD are an option for doping advanced fin field-effect transistors (FinFETs). Phosphorus may be thermally diffused into the silicon or recoil knocked in; simulations of the recoil profile of phosphorus into a FinFET surface are illustrated

Ion/Ioff ratio enhancement and scalability of gate-all-around nanowire negative-capacitance FET with ferroelectric HfO2

Science.gov (United States)

Jang, Kyungmin; Saraya, Takuya; Kobayashi, Masaharu; Hiramoto, Toshiro

2017-10-01

We have investigated the energy efficiency and scalability of ferroelectric HfO2 (FE:HfO2)-based negative-capacitance field-effect-transistor (NCFET) with gate-all-around (GAA) nanowire (NW) channel structure. Analytic simulation is conducted to characterize NW-NCFET by varying NW diameter and/or thickness of gate insulator as device structural parameters. Due to the negative-capacitance effect and GAA NW channel structure, NW-NCFET is found to have 5× higher Ion/Ioff ratio than classical NW-MOSFET and 2× higher than double-gate (DG) NCFET, which results in wider design window for high Ion/Ioff ratio. To analyze these obtained results from the viewpoint of the device scalability, we have considered constraints regarding very limited device structural spaces to fit by the gate insulator and NW channel for aggresively scaled gate length (Lg) and/or very tight NW pitch. NW-NCFET still has design point with very thinned gate insulator and/or narrowed NW. Therefore, FE:HfO2-based NW-NCFET is applicable to the aggressively scaled technology node of sub-10 nm Lg and to the very tight NW integration of sub-30 nm NW pitch for beyond 7 nm technology. From 2011 to 2014, he engaged in developing high-speed optical transceiver module as an alternative military service in Republic of Korea. His research interest includes the development of steep slope MOSFETs for high energy-efficient operation and ferroelectric HfO2-based semiconductor devices, and fabrication of nanostructured devices. He joined the IBM T.J. Watson Research Center, Yorktown Heights, NY, in 2010, where he worked on advanced CMOS technologies such as FinFET, nanowire FET, SiGe channel and III-V channel. He was also engaged in launching 14 nm SOI FinFET and RMG technology development. Since 2014, he has been an Associate Professor in Institute of Industrial Science, University of Tokyo, Tokyo, Japan, where he has been working on ultralow power transistor and memory technology. Dr. Kobayashi is a member of IEEE

Axial Ge/Si nanowire heterostructure tunnel FETs.

Energy Technology Data Exchange (ETDEWEB)

Dayeh, Shadi A. (Los Alamos National Laboratory); Gin, Aaron V.; Huang, Jian Yu; Picraux, Samuel Thomas (Los Alamos National Laboratory)

2010-03-01

Axial Ge/Si heterostructure nanowires (NWs) allow energy band-edge engineering along the axis of the NW, which is the charge transport direction, and the realization of asymmetric devices for novel device architectures. This work reports on two significant advances in the area of heterostructure NWs and tunnel FETs: (i) the realization of 100% compositionally modulated Si/Ge axial heterostructure NWs with lengths suitable for device fabrication and (ii) the design and implementation of Schottky barrier tunnel FETs on these NWs for high-on currents and suppressed ambipolar behavior. Initial prototype devices with 10 nm PECVD SiN{sub x} gate dielectric resulted in a very high current drive in excess of 100 {micro}A/{micro}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios. Prior work on the synthesis of Ge/Si axial NW heterostructures through the VLS mechanism have resulted in axial Si/Si{sub 1-x}Ge{sub x} NW heterostructures with x{sub max} {approx} 0.3, and more recently 100% composition modulation was achieved with a solid growth catalyst. In this latter case, the thickness of the heterostructure cannot exceed few atomic layers due to the slow axial growth rate and concurrent radial deposition on the NW sidewalls leading to a mixture of axial and radial deposition, which imposes a big challenge for fabricating useful devices form these NWs in the near future. Here, we report the VLS growth of 100% doping and composition modulated axial Ge/Si heterostructure NWs with lengths appropriate for device fabrication by devising a growth procedure that eliminates Au diffusion on the NW sidewalls and minimizes random kinking in the heterostructure NWs as deduced from detailed microscopy analysis. Fig. 1 a shows a cross-sectional SEM image of epitaxial Ge/Si axial NW heterostructures grown on a Ge(111) surface. The interface abruptness in these Ge/Si heterostructure NWs is of the order of the NW diameter. Some of these NWs develop a crystallographic kink that is {approx

Optimisation of the Ti/Al/Ni/Au ohmic contact on AlGaN/GaN FET structures

NARCIS (Netherlands)

Jacobs, B.; Krämer, M.C.J.C.M.; Geluk, E.J.; Karouta, F.

2002-01-01

We present a systematic approach to reduce the resistance of ohmic contacts on AlGaN/GaN FET structures. We have optimised the Ti/Al/Ni/Au contact with respect to the metal composition and annealing conditions. Our optimised contact has a very low contact resistance of 0.2 ohm mm (7.3 x 10^-7 ohm

A standing wave linear ultrasonic motor operating in in-plane expanding and bending modes.

Science.gov (United States)

Chen, Zhijiang; Li, Xiaotian; Ci, Penghong; Liu, Guoxi; Dong, Shuxiang

2015-03-01

A novel standing wave linear ultrasonic motor operating in in-plane expanding and bending modes was proposed in this study. The stator (or actuator) of the linear motor was made of a simple single Lead Zirconate Titanate (PZT) ceramic square plate (15 × 15 × 2 mm(3)) with a circular hole (D = 6.7 mm) in the center. The geometric parameters of the stator were computed with the finite element analysis to produce in-plane bi-mode standing wave vibration. The calculated results predicted that a driving tip attached at midpoint of one edge of the stator can produce two orthogonal, approximate straight-line trajectories, which can be used to move a slider in linear motion via frictional forces in forward or reverse direction. The investigations showed that the proposed linear motor can produce a six times higher power density than that of a previously reported square plate motor.

Radiation injury vs. recurrent brain metastasis: combining textural feature radiomics analysis and standard parameters may increase 18F-FET PET accuracy without dynamic scans.

Science.gov (United States)

Lohmann, Philipp; Stoffels, Gabriele; Ceccon, Garry; Rapp, Marion; Sabel, Michael; Filss, Christian P; Kamp, Marcel A; Stegmayr, Carina; Neumaier, Bernd; Shah, Nadim J; Langen, Karl-Josef; Galldiks, Norbert

2017-07-01

We investigated the potential of textural feature analysis of O-(2-[ 18 F]fluoroethyl)-L-tyrosine ( 18 F-FET) PET to differentiate radiation injury from brain metastasis recurrence. Forty-seven patients with contrast-enhancing brain lesions (n = 54) on MRI after radiotherapy of brain metastases underwent dynamic 18 F-FET PET. Tumour-to-brain ratios (TBRs) of 18 F-FET uptake and 62 textural parameters were determined on summed images 20-40 min post-injection. Tracer uptake kinetics, i.e., time-to-peak (TTP) and patterns of time-activity curves (TAC) were evaluated on dynamic PET data from 0-50 min post-injection. Diagnostic accuracy of investigated parameters and combinations thereof to discriminate between brain metastasis recurrence and radiation injury was compared. Diagnostic accuracy increased from 81 % for TBR mean alone to 85 % when combined with the textural parameter Coarseness or Short-zone emphasis. The accuracy of TBR max alone was 83 % and increased to 85 % after combination with the textural parameters Coarseness, Short-zone emphasis, or Correlation. Analysis of TACs resulted in an accuracy of 70 % for kinetic pattern alone and increased to 83 % when combined with TBR max . Textural feature analysis in combination with TBRs may have the potential to increase diagnostic accuracy for discrimination between brain metastasis recurrence and radiation injury, without the need for dynamic 18 F-FET PET scans. • Textural feature analysis provides quantitative information about tumour heterogeneity • Textural features help improve discrimination between brain metastasis recurrence and radiation injury • Textural features might be helpful to further understand tumour heterogeneity • Analysis does not require a more time consuming dynamic PET acquisition.

Linear algebra

CERN Document Server

Shilov, Georgi E

1977-01-01

Covers determinants, linear spaces, systems of linear equations, linear functions of a vector argument, coordinate transformations, the canonical form of the matrix of a linear operator, bilinear and quadratic forms, Euclidean spaces, unitary spaces, quadratic forms in Euclidean and unitary spaces, finite-dimensional space. Problems with hints and answers.

C0-semigroups of linear operators on some ultrametric Banach spaces

Directory of Open Access Journals (Sweden)

Toka Diagana

2006-01-01

Full Text Available C0-semigroups of linear operators play a crucial role in the solvability of evolution equations in the classical context. This paper is concerned with a brief conceptualization of C0-semigroups on (ultrametric free Banach spaces E. In contrast with the classical setting, the parameter of a given C0-semigroup belongs to a clopen ball Ωr of the ground field K. As an illustration, we will discuss the solvability of some homogeneous p-adic differential equations.

Solving wave propagation within finite-sized composite media with linear embedding via Green's operators

NARCIS (Netherlands)

Lancellotti, V.; Tijhuis, A.G.

2012-01-01

The calculation of electromagnetic (EM) fields and waves inside finite-sized structures comprised of different media can benefit from a diakoptics method such as linear embedding via Green's operators (LEGO). Unlike scattering problems, the excitation of EM waves within the bulk dielectric requires

Linear-Algebra Programs

Science.gov (United States)

Lawson, C. L.; Krogh, F. T.; Gold, S. S.; Kincaid, D. R.; Sullivan, J.; Williams, E.; Hanson, R. J.; Haskell, K.; Dongarra, J.; Moler, C. B.

1982-01-01

The Basic Linear Algebra Subprograms (BLAS) library is a collection of 38 FORTRAN-callable routines for performing basic operations of numerical linear algebra. BLAS library is portable and efficient source of basic operations for designers of programs involving linear algebriac computations. BLAS library is supplied in portable FORTRAN and Assembler code versions for IBM 370, UNIVAC 1100 and CDC 6000 series computers.

3D site specific sample preparation and analysis of 3D devices (FinFETs) by atom probe tomography.

Science.gov (United States)

Kambham, Ajay Kumar; Kumar, Arul; Gilbert, Matthieu; Vandervorst, Wilfried

2013-09-01

With the transition from planar to three-dimensional device architectures such as Fin field-effect-transistors (FinFETs), new metrology approaches are required to meet the needs of semiconductor technology. It is important to characterize the 3D-dopant distributions precisely as their extent, positioning relative to gate edges and absolute concentration determine the device performance in great detail. At present the atom probe has shown its ability to analyze dopant distributions in semiconductor and thin insulating materials with sub-nm 3D-resolution and good dopant sensitivity. However, so far most reports have dealt with planar devices or restricted the measurements to 2D test structures which represent only limited challenges in terms of localization and site specific sample preparation. In this paper we will discuss the methodology to extract the dopant distribution from real 3D-devices such as a 3D-FinFET device, requiring the sample preparation to be carried out at a site specific location with a positioning accuracy ∼50 nm. Copyright © 2013 Elsevier B.V. All rights reserved.

Assessment of various strategies for 18F-FET PET-guided delineation of target volumes in high-grade glioma patients

International Nuclear Information System (INIS)

Vees, Hansjoerg; Senthamizhchelvan, Srinivasan; Ratib, Osman; Miralbell, Raymond; Weber, Damien C.; Zaidi, Habib

2009-01-01

The purpose of the study is to assess the contribution of 18 F-fluoro-ethyl-tyrosine ( 18 F-FET) positron emission tomography (PET) in the delineation of gross tumor volume (GTV) in patients with high-grade gliomas compared with magnetic resonance imaging (MRI) alone. The study population consisted of 18 patients with high-grade gliomas. Seven image segmentation techniques were used to delineate 18 F-FET PET GTVs, and the results were compared to the manual MRI-derived GTV (GTV MRI ). PET image segmentation techniques included manual delineation of contours (GTV man ), a 2.5 standardized uptake value (SUV) cutoff (GTV 2.5 ), a fixed threshold of 40% and 50% of the maximum signal intensity (GTV 40% and GTV 50% ), signal-to-background ratio (SBR)-based adaptive thresholding (GTV SBR ), gradient find (GTV GF ), and region growing (GTV RG ). Overlap analysis was also conducted to assess geographic mismatch between the GTVs delineated using the different techniques. Contours defined using GTV 2.5 failed to provide successful delineation technically in three patients (18% of cases) as SUV max MRI (67% of cases). Yet, PET detected frequently tumors that are not visible on MRI and added substantially tumor extension outside the GTV MRI in six patients (33% of cases). The selection of the most appropriate 18 F-FET PET-based segmentation algorithm is crucial, since it impacts both the volume and shape of the resulting GTV. The 2.5 SUV isocontour and GF segmentation techniques performed poorly and should not be used for GTV delineation. With adequate setting, the SBR-based PET technique may add considerably to conventional MRI-guided GTV delineation. (orig.)

Histogram analysis reveals a better delineation of tumor volume from background in 18F-FET PET compared to CBV maps in a hybrid PET–MR studie in gliomas

International Nuclear Information System (INIS)

Filss, Christian P.; Stoffels, Gabriele; Galldiks, Norbert; Sabel, Michael; Wittsack, Hans J.; Coenen, Heinz H.; Shah, Nadim J.; Herzog, Hans

2014-01-01

Anatomical imaging with magnetic resonance imaging (MRI) is currently the method of first choice for diagnostic investigation of glial tumors. However, different MR sequences may over- or underestimate tumor size and thus it may not be possible to delineate tumor from adjacent brain. In order to compensate this confinement additonal MR sequences like perfusion weighted MRI (PWI) with regional cerebral blood volume (rCBV) or positron emission tomography (PET) with aminoacids are used to gain further information. Recent studies suggest that both of theses image modalities provide similar diagnostic information. For comparison tumor to brain ratios (TBR) with mean and maximum values are frequently used but results from different studies can often not be checked against each other. Furthermore, especially the maximum TBR in rCBV is at risk to be falsified by artifacts (e.g. blood vessels). These confinements are reduced by the use of histograms since all information of the VOIs are equally displayed. In this study we measured and compared the intersection of tumor and reference tissue histograms in 18 F-FET PET and rCBV maps in glioma patients. Methods: Twenty-seven glioma patients with contrast enhancing lesion on T1-weighted MR images were investigated using static 18 F-FET PET and rCBV in MRI using a PET–MR hybrid scanner. In all patients diagnosis was confirmed histologically (7 grade II gliomas, 6 grade III gliomas and 14 grade IV gliomas). We generated a set of tumor and reference tissue Volumes-of-Interest (VOIs) based on T1 weighted images in MRI with the tumor VOI defined by contrast enhancement and transferred these VOIs to the corresponding 18 F-FET PET scans and rCBV maps. From these VOIs we generated tumor and reference tissue histograms with a unity of one for each curve integral and measured the proportion of the area under the tumor curve that falls into the reference curve for 18 F-FET PET and rCBV maps for each patient. Results: The mean proportion

Construction, commissioning and operational experience of the Advanced Photon Source (APS) linear accelerator

International Nuclear Information System (INIS)

White, M.; Arnold, N.; Berg, W.

1996-01-01

The Advanced Photon Source linear accelerator system consists of a 200 MeV, 2856 MHz S-Band electron linac and a 2-radiation-thick tungsten target followed by a 450 MeV positron linac. The linac system has operated 24 hours per day for the past year to support accelerator commissioning and beam studies and to provide beam for the user experimental program. It achieves the design goal for positron current of 8 mA and produces electron energies up to 650 MeV without the target in place. The linac is described and its operation and performance are discussed

Construction, commissioning and operational experience of the Advanced Photon Source (APS) linear accelerator

International Nuclear Information System (INIS)

White, M.; Arnold, N.; Berg, W.; Cours, A.; Fuja, R.; Grelick, A. E.; Sereno, N.; Wesolowski, W.; Ko, K.; Qian, Y.L.; Russell, T.

1996-01-01

The Advanced Photon Source linear accelerator system consists of a 200-MeV, 2856-MHz S-band electron linac and a 2-radiation-thick tungsten target followed by a 450-MeV positron linac. The linac system has operated 24 hours per day for the past year to support accelerator commissioning and beam studies and to provide beam for the user experimental program. It achieves the design goal for positron current of 8 mA and produces electron energies up to 650 MeV without the target in place. The linac is described and its operation and performance are discussed. (author)

The prognostic value of FET PET at radiotherapy planning in newly diagnosed glioblastoma

DEFF Research Database (Denmark)

Poulsen, Sidsel Højklint; Urup, Thomas; Grunnet, Kirsten

2017-01-01

the prognostic value of FET PET biological tumor volume (BTV). RESULTS: Median follow-up time was 14 months, and median OS and PFS were 16.5 and 6.5 months, respectively. In the multivariate analysis, increasing BTV (HR = 1.17, P ...-DNA methyltransferase protein status (HR = 1.61, P = 0.024) and higher age (HR = 1.32, P = 0.013) were independent prognostic factors of poor OS. For poor PFS, only increasing BTV (HR = 1.18; P = 0.002) was prognostic. A prognostic index for OS was created based on the identified prognostic factors. CONCLUSION: Large...

Millimeter-wave generation and characterization of a GaAs FET by optical mixing

Science.gov (United States)

Ni, David C.; Fetterman, Harold R.; Chew, Wilbert

1990-01-01

Coherent mixing of optical radiation from a tunable continuous-wave dye laser and a stabilized He-Ne laser was used to generate millimeter-wave signals in GaAs FETs attached to printed-circuit millimeter-wave antennas. The generated signal was further down-converted to a 2-GHz IF by an antenna-coupled millimeter-wave local oscillator at 62 GHz. Detailed characterizations of power and S/N under different bias conditions have been performed. This technique is expected to allow signal generation and frequency-response evaluation of millimeter-wave devices at frequencies as high as 100 GHz.

Overview of ten-year operation of the superconducting linear accelerator at the Spallation Neutron Source

Science.gov (United States)

Kim, S.-H.; Afanador, R.; Barnhart, D. L.; Crofford, M.; Degraff, B. D.; Doleans, M.; Galambos, J.; Gold, S. W.; Howell, M. P.; Mammosser, J.; McMahan, C. J.; Neustadt, T. S.; Peters, C.; Saunders, J. W.; Strong, W. H.; Vandygriff, D. J.; Vandygriff, D. M.

2017-04-01

The Spallation Neutron Source (SNS) has acquired extensive operational experience of a pulsed proton superconducting linear accelerator (SCL) as a user facility. Numerous lessons have been learned in its first 10 years operation to achieve a stable and reliable operation of the SCL. In this paper, an overview of the SNS SCL design, qualification of superconducting radio frequency (SRF) cavities and ancillary subsystems, an overview of the SNS cryogenic system, the SCL operation including SCL output energy history and downtime statistics, performance stability of the SRF cavities, efforts for SRF cavity performance recovery and improvement at the SNS, and maintenance activities for cryomodules are introduced.

Overview of ten-year operation of the superconducting linear accelerator at the Spallation Neutron Source

International Nuclear Information System (INIS)

Kim, Sang-Ho; Afanador, Ralph; Barnhart, Debra L.; Crofford, Mark T.; Degraff, Brian D.

2017-01-01

The Spallation Neutron Source (SNS) has acquired extensive operational experience of a pulsed proton superconducting linear accelerator (SCL) as a user facility. Numerous lessons have been learned in its first 10 years operation to achieve a stable and reliable operation of the SCL. In this paper, an overview of the SNS SCL design, qualification of superconducting radio frequency (SRF) cavities and ancillary subsystems, an overview of the SNS cryogenic system, the SCL operation including SCL output energy history and downtime statistics, performance stability of the SRF cavities, efforts for SRF cavity performance recovery and improvement at the SNS, and maintenance activities for cryomodules are introduced.

Optimizing Biorefinery Design and Operations via Linear Programming Models

Energy Technology Data Exchange (ETDEWEB)

Talmadge, Michael; Batan, Liaw; Lamers, Patrick; Hartley, Damon; Biddy, Mary; Tao, Ling; Tan, Eric

2017-03-28

The ability to assess and optimize economics of biomass resource utilization for the production of fuels, chemicals and power is essential for the ultimate success of a bioenergy industry. The team of authors, consisting of members from the National Renewable Energy Laboratory (NREL) and the Idaho National Laboratory (INL), has developed simple biorefinery linear programming (LP) models to enable the optimization of theoretical or existing biorefineries. The goal of this analysis is to demonstrate how such models can benefit the developing biorefining industry. It focuses on a theoretical multi-pathway, thermochemical biorefinery configuration and demonstrates how the biorefinery can use LP models for operations planning and optimization in comparable ways to the petroleum refining industry. Using LP modeling tools developed under U.S. Department of Energy's Bioenergy Technologies Office (DOE-BETO) funded efforts, the authors investigate optimization challenges for the theoretical biorefineries such as (1) optimal feedstock slate based on available biomass and prices, (2) breakeven price analysis for available feedstocks, (3) impact analysis for changes in feedstock costs and product prices, (4) optimal biorefinery operations during unit shutdowns / turnarounds, and (5) incentives for increased processing capacity. These biorefinery examples are comparable to crude oil purchasing and operational optimization studies that petroleum refiners perform routinely using LPs and other optimization models. It is important to note that the analyses presented in this article are strictly theoretical and they are not based on current energy market prices. The pricing structure assigned for this demonstrative analysis is consistent with $4 per gallon gasoline, which clearly assumes an economic environment that would favor the construction and operation of biorefineries. The analysis approach and examples provide valuable insights into the usefulness of analysis tools for

Simultaneous acquisition of dynamic PET-MRI: arterial input function using DSC-MRI and [18F]-FET

Energy Technology Data Exchange (ETDEWEB)

Caldeira, Liliana; Yun, Seong Dae; Silva, Nuno da; Filss, Christian; Scheins, Juergen; Telmann, Lutz; Herzog, Hans; Shah, Jon [Institute of Neuroscience and Medicine - 4, Forschungszentrum Juelich GmbH (Germany)

2015-05-18

This work focuses on the study of simultaneous dynamic MR-PET acquisition in brain tumour patients. MR-based perfusion-weighted imaging (PWI) and PET [18F]-FET are dynamic methods, which allow to evaluate tumour metabolism in a quantitative way. In both methods, arterial input function (AIF) is necessary for quantification. However, the AIF estimation is a challenging task. In this work, we explore the possibilities to combine dynamic MR and PET AIF.

Simultaneous acquisition of dynamic PET-MRI: arterial input function using DSC-MRI and [18F]-FET

International Nuclear Information System (INIS)

Caldeira, Liliana; Yun, Seong Dae; Silva, Nuno da; Filss, Christian; Scheins, Juergen; Telmann, Lutz; Herzog, Hans; Shah, Jon

2015-01-01

This work focuses on the study of simultaneous dynamic MR-PET acquisition in brain tumour patients. MR-based perfusion-weighted imaging (PWI) and PET [18F]-FET are dynamic methods, which allow to evaluate tumour metabolism in a quantitative way. In both methods, arterial input function (AIF) is necessary for quantification. However, the AIF estimation is a challenging task. In this work, we explore the possibilities to combine dynamic MR and PET AIF.

Feedback control systems for non-linear simulation of operational transients in LMFBRs

International Nuclear Information System (INIS)

Khatib-Rahbar, M.; Agrawal, A.K.; Srinivasan, E.S.

1979-01-01

Feedback control systems for non-linear simulation of operational transients in LMFBRs are developed. The models include (1) the reactor power control and rod drive mechanism, (2) sodium flow control and pump drive system, (3) steam generator flow control and valve actuator dynamics, and (4) the supervisory control. These models have been incorporated into the SSC code using a flexible approach, in order to accommodate some design dependent variations. The impact of system nonlinearity on the control dynamics is shown to be significant for severe perturbations. Representative result for a 10 cent and 25 cent step insertion of reactivity and a 10% ramp change in load in 40 seconds demonstrate the suitability of this model for study of operational transients without scram in LMFBRs

Impact of underlap spacer region variation on electrostatic and analog performance of symmetrical high-k SOI FinFET at 20 nm channel length

Science.gov (United States)

Jain, Neeraj; Raj, Balwinder

2017-12-01

Continued scaling of CMOS technology to achieve high performance and low power consumption of semiconductor devices in the complex integrated circuits faces the degradation in terms of electrostatic integrity, short channel effects (SCEs), leakage currents, device variability and reliability etc. Nowadays, multigate structure has become the promising candidate to overcome these problems. SOI FinFET is one of the best multigate structures that has gained importance in all electronic design automation (EDA) industries due to its improved short channel effects (SCEs), because of its more effective gate-controlling capabilities. In this paper, our aim is to explore the sensitivity of underlap spacer region variation on the performance of SOI FinFET at 20 nm channel length. Electric field modulation is analyzed with spacer length variation and electrostatic performance is evaluated in terms of performance parameter like electron mobility, electric field, electric potential, sub-threshold slope (SS), ON current (I on), OFF current (I off) and I on/I off ratio. The potential benefits of SOI FinFET at drain-to-source voltage, V DS = 0.05 V and V DS = 0.7 V towards analog and RF design is also evaluated in terms of intrinsic gain (A V), output conductance (g d), trans-conductance (g m), gate capacitance (C gg), and cut-off frequency (f T = g m/2πC gg) with spacer region variations.

Hybrid System Modeling and Full Cycle Operation Analysis of a Two-Stroke Free-Piston Linear Generator

Directory of Open Access Journals (Sweden)

Peng Sun

2017-02-01

Full Text Available Free-piston linear generators (FPLGs have attractive application prospects for hybrid electric vehicles (HEVs owing to their high-efficiency, low-emissions and multi-fuel flexibility. In order to achieve long-term stable operation, the hybrid system design and full-cycle operation strategy are essential factors that should be considered. A 25 kW FPLG consisting of an internal combustion engine (ICE, a linear electric machine (LEM and a gas spring (GS is designed. To improve the power density and generating efficiency, the LEM is assembled with two modular flat-type double-sided PM LEM units, which sandwich a common moving-magnet plate supported by a middle keel beam and bilateral slide guide rails to enhance the stiffness of the moving plate. For the convenience of operation processes analysis, the coupling hybrid system is modeled mathematically and a full cycle simulation model is established. Top-level systemic control strategies including the starting, stable operating, fault recovering and stopping strategies are analyzed and discussed. The analysis results validate that the system can run stably and robustly with the proposed full cycle operation strategy. The effective electric output power can reach 26.36 kW with an overall system efficiency of 36.32%.

Contributions to the spectral theory of the linear Boltzmann operator for various geometries

International Nuclear Information System (INIS)

Protopopescu, V.

1975-01-01

The linear monoenergetic Boltzmann operator with isotropic scattering is studied for various geometries and boundary conditions as the infinitesimal generator of a positivity preserving contractive semigroup in an appropriate Hilbert space. General results about the existence and the uniqueness of the solutions of the corresponding evolution problems are reviewed. The spectrum of the Boltzmann operator is analyzed for semi-infinite, slab and parallelepipedic geometries with vacuum, periodic, perfectly reflecting, generalized and diffusely reflecting boundary condition respectively. The main features of these spectra, their importance for determining the asymptotic evolution and possible generalizations to more realistic models are put together in a final section. (author)

Extended Linear Embedding via Green's Operators for Analyzing Wave Scattering from Anisotropic Bodies

Directory of Open Access Journals (Sweden)

V. Lancellotti

2014-01-01

Full Text Available Linear embedding via Green’s operators (LEGO is a domain decomposition method particularly well suited for the solution of scattering and radiation problems comprised of many objects. The latter are enclosed in simple-shaped subdomains (electromagnetic bricks which are in turn described by means of scattering operators. In this paper we outline the extension of the LEGO approach to the case of penetrable objects with dyadic permittivity or permeability. Since a volume integral equation is only required to solve the scattering problem inside a brick and the scattering operators are inherently surface operators, the LEGO procedure per se can afford a reduction of the number of unknowns in the numerical solution with the Method of Moments and subsectional basis functions. Further substantial reduction is achieved with the eigencurrents expansion method (EEM which employs the eigenvectors of the scattering operator as local entire-domain basis functions over a brick’s surface. Through a few selected numerical examples we discuss the validation and the efficiency of the LEGO-EEM technique applied to clusters of anisotropic bodies.

Logic Locking Using Hybrid CMOS and Emerging SiNW FETs

Directory of Open Access Journals (Sweden)

Qutaiba Alasad

2017-09-01

Full Text Available The outsourcing of integrated circuit (IC fabrication services to overseas manufacturing foundry has raised security and privacy concerns with regard to intellectual property (IP protection as well as the integrity maintenance of the fabricated chips. One way to protect ICs from malicious attacks is to encrypt and obfuscate the IP design by incorporating additional key gates, namely logic encryption or logic locking. The state-of-the-art logic encryption techniques certainly incur considerable performance overhead upon the genuine IP design. The focus of this paper is to leverage the unique property of emerging transistor technology on reducing the performance overhead as well as preserving the robustness of logic locking technique. We design the polymorphic logic gate using silicon nanowire field effect transistors (SiNW FETs to replace the conventional Exclusive-OR (XOR-based logic cone. We then evaluate the proposed technique based on security metric and performance overhead.

An efficient linear approach in the reservoirs operation for electric power generation; Uma eficiente abordagem linear na operacao de reservatorios para geracao de energia eletrica

Energy Technology Data Exchange (ETDEWEB)

Zambon, Katia Livia

1997-07-01

A new approach for the Scheduling of Hydrothermal Systems, with a formulation that allows the solution of the problem through the linear programming techniques, otherwise the original form, which is complex and difficult is presented. The models were developed through a linear form for the generation function of hydroelectric plants, successive of the linearization of the cost function of the problem. The linear techniques used were the Simplex Method, with some modification that is is efficient, fast and simple. The important physical aspects of the system were preserved, like the individual representation of the hydroelectric plant, the features of cost function with the exponential increase and the head effect. Besides, this formulation can lead to stochastic approaches. All the optimization methods were implemented for the solution of the problem. The performance obtained were compared with each other and with that obtained through the non linear techniques. The algorithms showed to be efficient, with good results and very near to the optimal behavior of the reservoir operation planning obtained by traditional methods. (author)

Strain characterization of FinFETs using Raman spectroscopy

International Nuclear Information System (INIS)

Kaleli, B.; Hemert, T. van; Hueting, R.J.E.; Wolters, R.A.M.

2013-01-01

Metal induced strain in the channel region of silicon (Si) fin-field effect transistor (FinFET) devices has been characterized using Raman spectroscopy. The strain originates from the difference in thermal expansion coefficient of Si and titanium-nitride. The Raman map of the device region is used to determine strain in the channel after preparing the device with the focused ion beam milling. Using the Raman peak shift relative to that of relaxed Si, compressive strain values up to – 0.88% have been obtained for a 5 nm wide silicon fin. The strain is found to increase with reducing fin width though it scales less than previously reported results from holographic interferometry. In addition, finite-element method (FEM) simulations have been utilized to analyze the amount of strain generated after thermal processing. It is shown that obtained FEM simulated strain values are in good agreement with the calculated strain values obtained from Raman spectroscopy. - Highlights: ► Strain is characterized in nanoscale devices with Raman spectroscopy. ► There is a fin width dependence of the originated strain. ► Strain levels obtained from this technique is in correlation with device simulations

High operational and environmental stability of high-mobility conjugated polymer field-effect transistors through the use of molecular additives

KAUST Repository

Nikolka, Mark; Nasrallah, Iyad; Rose, Bradley Daniel; Ravva, Mahesh Kumar; Broch, Katharina; Sadhanala, Aditya; Harkin, David; Charmet, Jerome; Hurhangee, Michael; Brown, Adam; Illig, Steffen; Too, Patrick; Jongman, Jan; McCulloch, Iain; Bredas, Jean-Luc; Sirringhaus, Henning

2016-01-01

Due to their low-temperature processing properties and inherent mechanical flexibility, conjugated polymer field-effect transistors (FETs) are promising candidates for enabling flexible electronic circuits and displays. Much progress has been made on materials performance; however, there remain significant concerns about operational and environmental stability, particularly in the context of applications that require a very high level of threshold voltage stability, such as active-matrix addressing of organic light-emitting diode displays. Here, we investigate the physical mechanisms behind operational and environmental degradation of high-mobility, p-type polymer FETs and demonstrate an effective route to improve device stability. We show that water incorporated in nanometre-sized voids within the polymer microstructure is the key factor in charge trapping and device degradation. By inserting molecular additives that displace water from these voids, it is possible to increase the stability as well as uniformity to a high level sufficient for demanding industrial applications.

High operational and environmental stability of high-mobility conjugated polymer field-effect transistors through the use of molecular additives

KAUST Repository

Nikolka, Mark

2016-12-12

Due to their low-temperature processing properties and inherent mechanical flexibility, conjugated polymer field-effect transistors (FETs) are promising candidates for enabling flexible electronic circuits and displays. Much progress has been made on materials performance; however, there remain significant concerns about operational and environmental stability, particularly in the context of applications that require a very high level of threshold voltage stability, such as active-matrix addressing of organic light-emitting diode displays. Here, we investigate the physical mechanisms behind operational and environmental degradation of high-mobility, p-type polymer FETs and demonstrate an effective route to improve device stability. We show that water incorporated in nanometre-sized voids within the polymer microstructure is the key factor in charge trapping and device degradation. By inserting molecular additives that displace water from these voids, it is possible to increase the stability as well as uniformity to a high level sufficient for demanding industrial applications.

Toward the 5nm technology: layout optimization and performance benchmark for logic/SRAMs using lateral and vertical GAA FETs

Science.gov (United States)

Huynh-Bao, Trong; Ryckaert, Julien; Sakhare, Sushil; Mercha, Abdelkarim; Verkest, Diederik; Thean, Aaron; Wambacq, Piet

2016-03-01

In this paper, we present a layout and performance analysis of logic and SRAM circuits for vertical and lateral GAA FETs using 5nm (iN5) design rules. Extreme ultra-violet lithography (EUVL) processes are exploited to print the critical features: 32 nm gate pitch and 24 nm metal pitch. Layout architectures and patterning compromises for enabling the 5nm node will be discussed in details. A distinct standard-cell template for vertical FETs is proposed and elaborated for the first time. To assess electrical performances, a BSIM-CMG model has been developed and calibrated with TCAD simulations, which accounts for the quasi-ballistic transport in the nanowire channel. The results show that the inbound power rail layout construct for vertical devices could achieve the highest density while the interleaving diffusion template can maximize the port accessibility. By using a representative critical path circuit of a generic low power SoCs, it is shown that the VFET-based circuit is 40% more energy efficient than LFET designs at iso-performance. Regarding SRAMs, benefits given by vertical channel orientation in VFETs has reduced the SRAM area by 20%~30% compared to lateral SRAMs. A double exposures with EUV canner is needed to reach a minimum tip-to-tip (T2T) of 16 nm for middle-of-line (MOL) layers. To enable HD SRAMs with two metal layers, a fully self-aligned gate contact for LFETs and 2D routing of the top electrode for VFETs are required. The standby leakage of vertical SRAMs is 4~6X lower than LFET-based SRAMs at iso-performance and iso-area. The minimum operating voltage (Vmin) of vertical SRAMs is 170 mV lower than lateral SRAMs. A high-density SRAM bitcell of 0.014 um2 can be obtained for the iN5 technology node, which fully follows the SRAM scaling trend for the 45nm nodes and beyond.

Modeling and experiments on differential pumping in linear plasma generators operating at high gas flows

NARCIS (Netherlands)

Eck, van H.J.N.; Koppers, W.R.; Rooij, van G.J.; Goedheer, W.J.; Engeln, R.A.H.; Schram, D.C.; Lopes Cardozo, N.J.; Kleyn, A.W.

2009-01-01

The direct simulation Monte Carlo (DSMC) method was used to investigate the efficiency of differential pumping in linear plasma generators operating at high gas flows. Skimmers are used to separate the neutrals from the plasma beam, which is guided from the source to the target by a strong axial

Statistical analysis of operating efficiency and failures of a medical linear accelerator for ten years

International Nuclear Information System (INIS)

Ju, Sang Gyu; Huh, Seung Jae; Han, Young Yih

2005-01-01

To improve the management of a medical linear accelerator, the records of operational failures of a Varian CL2100C over a ten year period were retrospectively analyzed. The failures were classified according to the involved functional subunits, with each class rated into one of three levels depending on the operational conditions. The relationships between the failure rate and working ratio and between the failure rate and outside temperature were investigated. In addition, the average life time of the main part and the operating efficiency over the last 4 years were analyzed. Among the recorded failures (total 587 failures), the most frequent failure was observed in the parts related with the collimation system, including the monitor chamber, which accounted for 20% of all failures. With regard to the operational conditions, 2nd level of failures, which temporally interrupted treatments, were the most frequent. Third level of failures, which interrupted treatment for more than several hours, were mostly caused by the accelerating subunit. The number of failures was increased with number of treatments and operating time. The average life-times of the Klystron and Thyratron became shorter as the working ratio increased, and were 42 and 83% of the expected values, respectively. The operating efficiency was maintained at 95% or higher, but this value slightly decreased. There was no significant correlation between the number of failures and the outside temperature. The maintenance of detailed equipment problems and failures records over a long period of time can provide good knowledge of equipment function as well as the capability of predicting future failure. More rigorous equipment maintenance is required for old medical linear accelerators for the advanced avoidance of serious failure and to improve the quality of patient treatment

DotFETs: MOSFETs strained by a Single SiGE dot in a Low-Temperature ELA Technology

OpenAIRE

Biasotto, C.

2011-01-01

The work presented in this thesis was performed in the context of the European Sixth Framework Program FP6 project “Disposable Dot Field Effect Transistor for High Speed Si Integrated Circuits”, referred to as the D-DotFET project. The project had the goal of realizing strain-enhanced mobility in CMOS transistors by transferring strain from a self-assembled germanium dot to the channel of a transistor fabricated above the dot. The initial idea was to dispose of the Ge dot underneath the chann...

Computer Program For Linear Algebra

Science.gov (United States)

Krogh, F. T.; Hanson, R. J.

1987-01-01

Collection of routines provided for basic vector operations. Basic Linear Algebra Subprogram (BLAS) library is collection from FORTRAN-callable routines for employing standard techniques to perform basic operations of numerical linear algebra.

Linear gate

International Nuclear Information System (INIS)

Suwono.

1978-01-01

A linear gate providing a variable gate duration from 0,40μsec to 4μsec was developed. The electronic circuity consists of a linear circuit and an enable circuit. The input signal can be either unipolar or bipolar. If the input signal is bipolar, the negative portion will be filtered. The operation of the linear gate is controlled by the application of a positive enable pulse. (author)

Effects of Linear Falling Ramp Reset Pulse on Addressing Operation in AC PDP

International Nuclear Information System (INIS)

Liu Zujun; Liang Zhihu; Liu Chunliang; Meng Lingguo

2006-01-01

The effects of linear falling ramp reset pulse related to addressing operation in an alternating current plasma display panel (AC PDP) were studied. The wall charge waveforms were measured by the electrode balance method in a 12-inch coplanar AC PDP. The wall charge waveforms show the relationship between the slope ratio of the falling ramp reset pulse and the wall charges at the end of the falling ramp reset pulse which influences the addressing stability. Then the effects of the slope ratio of the linear falling ramp reset pulse on the addressing voltage and addressing time were investigated. The experimental results show that the minimum addressing voltage increases with the increase of the slope ratio of the falling ramp reset pulse, and so does the minimum addressing time. Based on the experimental results, the optimization of the addressing time and the slope ratio of the falling ramp pulse is discussed

Radiological safety aspects of the operation of electron linear accelerators

International Nuclear Information System (INIS)

Swanson, W.P.

1979-01-01

This manual is intended as a guide for the planning and implementation of radiation protection programmes for all types of electron linear accelerators. Material is provided for guidance in the planning and installation stages, as well as for the implementation of radiation protection for continuing operations. Because of their rapidly growing importance, the problems of installation and radiation safety of standard medical and industrial accelerators are discussed in separate sections. Special discussions are devoted to the radiation protection problems unique to electron accelerators: thick-target bremsstrahlung, the electromagnetic cascade, the estimation of secondary-radiation yields from thick targets, and instrumental corrections for accelerator duty factor. In addition, an extensive review of neutron production is given which includes new calculations of neutron production in various materials. A recalculation of activation in a variety of materials has been done for this manual, and specific gamma-ray constants have been recalculated for a number of nuclides to take into account the contribution of K X-rays. The subjects of air and water activation, as well as toxic gas production in air have been specially reviewed. Betatrons and electron microtrons operating at the same energy produce essentially the same kind of secondary radiation as electron linacs and the material given in this manual is directly applicable to them

30 GHz monolithic balanced mixers using an ion-implanted FET-compatible 3-inch GaAs wafer process technology

Science.gov (United States)

Bauhahn, P.; Contolatis, A.; Sokolov, V.; Chao, C.

1986-01-01

An all ion-implanted Schottky barrier mixer diode which has a cutoff frequency greater than 1000 GHz has been developed. This new device is planar and FET-compatible and employs a projection lithography 3-inch wafer process. A Ka-band monolithic balanced mixer based on this device has been designed, fabricated and tested. A conversion loss of 8 dB has been measured with a LO drive of 10 dBm at 30 GHz.

Research on the operation characteristics of a free-piston linear generator: Numerical model and experimental results

International Nuclear Information System (INIS)

Guo, Chendong; Feng, Huihua; Jia, Boru; Zuo, Zhengxing; Guo, Yuyao; Roskilly, Tony

2017-01-01

Highlights: • The operation process of free-piston linear generator is investigated. • The larger the motor force at the starting process, the fewer circulations of the piston reciprocating to meet ignition condition. • The “gradually switching strategy” is the best strategy in the intermediate process. • During the generating process, engines indicated power is 2.9 kW with an efficiency of 37.3% under medium load. - Abstract: Free piston linear generator (FPLG) shows unique operation characteristics due to the elimination of crankshaft and connecting rod mechanism. This paper investigates its operation characteristics during each operating process based on the simulation and experiment results. During the starting process, the larger motor force during the starting process, the fewer times of reciprocating pistons which meet the condition of ignition. When the motor force reached 300 N, the prototype could adopt one-stroke starting strategy. During the intermediate process, it was found that the “gradually switching strategy” could help to achieve a smoother operation during the intermediate process. And the values of the operation parameters after the intermediate process were lower than those before the intermediate process. During the generating process, cycle-to-cycle variations were observed for piston TDC and in-cylinder gas pressure from the experimental results. According to the experimental results of the FPLG during the generating process, the calculated engine indicated power is 2.9 kW, and the corresponding indicated thermal efficiency is 37.3%. Additionally, based on the comparison of the FPLG performance, it is found that the parameters of the FPLG during the generating process are smaller than those when it was operated during the second stage of the starting process, while much higher than those during the first stage of the starting process.

Silicon tunnel FET with average subthreshold slope of 55 mV/dec at low drain currents

Science.gov (United States)

Narimani, K.; Glass, S.; Bernardy, P.; von den Driesch, N.; Zhao, Q. T.; Mantl, S.

2018-05-01

In this paper we present a silicon tunnel FET based on line-tunneling to achieve better subthreshold performance. The fabricated device shows an on-current of Ion = 2.55 × 10-7 A/μm at Vds = Von = Vgs - Voff = -0.5 V for an Ioff = 1 nA/μm and an average SS of 55 mV/dec over two orders of magnitude of Id. Furthermore, the analog figures of merit have been calculated and show that the transconductance efficiency gm/Id beats the MOSFET performance at low currents.

Linear operator pencils on Lie algebras and Laurent biorthogonal polynomials

International Nuclear Information System (INIS)

Gruenbaum, F A; Vinet, Luc; Zhedanov, Alexei

2004-01-01

We study operator pencils on generators of the Lie algebras sl 2 and the oscillator algebra. These pencils are linear in a spectral parameter λ. The corresponding generalized eigenvalue problem gives rise to some sets of orthogonal polynomials and Laurent biorthogonal polynomials (LBP) expressed in terms of the Gauss 2 F 1 and degenerate 1 F 1 hypergeometric functions. For special choices of the parameters of the pencils, we identify the resulting polynomials with the Hendriksen-van Rossum LBP which are widely believed to be the biorthogonal analogues of the classical orthogonal polynomials. This places these examples under the umbrella of the generalized bispectral problem which is considered here. Other (non-bispectral) cases give rise to some 'nonclassical' orthogonal polynomials including Tricomi-Carlitz and random-walk polynomials. An application to solutions of relativistic Toda chain is considered

18F-FET PET prior to recurrent high-grade glioma re-irradiation-additional prognostic value of dynamic time-to-peak analysis and early static summation images?

Science.gov (United States)

Fleischmann, Daniel F; Unterrainer, Marcus; Bartenstein, Peter; Belka, Claus; Albert, Nathalie L; Niyazi, Maximilian

2017-04-01

Most high-grade gliomas (HGG) recur after initial multimodal therapy and re-irradiation (Re-RT) has been shown to be a valuable re-treatment option in selected patients. We evaluated the prognostic value of dynamic time-to-peak analysis and early static summation images in O-(2- 18 F-fluoroethyl)-l-tyrosine ( 18 F-FET) PET for patients treated with Re-RT ± concomitant bevacizumab. We retrospectively analyzed 72 patients suffering from recurrent HGG with 18 F-FET PET prior to Re-RT. PET analysis revealed the maximal tumor-to-background-ratio (TBR max ), the biological tumor volume, the number of PET-foci and pattern of time-activity-curves (TACs; increasing vs. decreasing). Furthermore, the novel PET parameters early TBR max (at 5-15 min post-injection) and minimal time-to-peak (TTP min ) were evaluated. Additional analysis was performed for gender, age, KPS, O6-methylguanine-DNA methyltransferase methylation status, isocitrate dehydrogenase 1 mutational status, WHO grade and concomitant bevacizumab therapy. The influence of PET and clinical parameters on post-recurrence survival (PRS) was investigated. Shorter TTP min was related to shorter PRS after Re-RT with 6 months for TTP min  25 min (p = 0.027). TTP min had a significant impact on PRS both on univariate (p = 0.027; continuous) and multivariate analysis (p = 0.011; continuous). Other factors significantly related to PRS on multivariate analysis were increasing vs. decreasing TACs (p = 0.008) and Karnofsky Performance Score (p = 0.015; PET parameters were not significantly related to PRS on univariate analysis. Dynamic 18 F-FET PET with TTP min provides a high prognostic value for recurrent HGG prior to Re-RT, whereas early TBR max does not. Dynamic 18 F-FET PET using TTP min might help to personalize Re-RT treatment regimens in future through voxelwise TTP min analysis for dose painting purposes and PET-guided dose escalation.

Application of linear logic to simulation

Science.gov (United States)

Clarke, Thomas L.

1998-08-01

Linear logic, since its introduction by Girard in 1987 has proven expressive and powerful. Linear logic has provided natural encodings of Turing machines, Petri nets and other computational models. Linear logic is also capable of naturally modeling resource dependent aspects of reasoning. The distinguishing characteristic of linear logic is that it accounts for resources; two instances of the same variable are considered differently from a single instance. Linear logic thus must obey a form of the linear superposition principle. A proportion can be reasoned with only once, unless a special operator is applied. Informally, linear logic distinguishes two kinds of conjunction, two kinds of disjunction, and also introduces a modal storage operator that explicitly indicates propositions that can be reused. This paper discuses the application of linear logic to simulation. A wide variety of logics have been developed; in addition to classical logic, there are fuzzy logics, affine logics, quantum logics, etc. All of these have found application in simulations of one sort or another. The special characteristics of linear logic and its benefits for simulation will be discussed. Of particular interest is a connection that can be made between linear logic and simulated dynamics by using the concept of Lie algebras and Lie groups. Lie groups provide the connection between the exponential modal storage operators of linear logic and the eigen functions of dynamic differential operators. Particularly suggestive are possible relations between complexity result for linear logic and non-computability results for dynamical systems.

Linearity in Process Languages

DEFF Research Database (Denmark)

Nygaard, Mikkel; Winskel, Glynn

2002-01-01

The meaning and mathematical consequences of linearity (managing without a presumed ability to copy) are studied for a path-based model of processes which is also a model of affine-linear logic. This connection yields an affine-linear language for processes, automatically respecting open......-map bisimulation, in which a range of process operations can be expressed. An operational semantics is provided for the tensor fragment of the language. Different ways to make assemblies of processes lead to different choices of exponential, some of which respect bisimulation....

Operational matrices with respect to Hermite polynomials and their applications in solving linear dierential equations with variable coecients

Directory of Open Access Journals (Sweden)

A. Aminataei

2014-05-01

Full Text Available In this paper, a new and ecient approach is applied for numerical approximation of the linear dierential equations with variable coecients based on operational matrices with respect to Hermite polynomials. Explicit formulae which express the Hermite expansioncoecients for the moments of derivatives of any dierentiable function in terms of the original expansion coecients of the function itself are given in the matrix form. The mainimportance of this scheme is that using this approach reduces solving the linear dierentialequations to solve a system of linear algebraic equations, thus greatly simplifying the problem. In addition, two experiments are given to demonstrate the validity and applicability of the method

Embedded NVM technology at BEOL for 14nm FinFET and beyond

Science.gov (United States)

Chi, Min-hwa

2016-10-01

As the FinFET technology is state-of-art CMOS platform at 14nm node and beyond, the embedded non-volatile memory (NVM) technologies need to be fully compatible at front-of-line (FEOL) or back-of-line (BEOL), e.g. Phase-Change-RAM (PCRAM), Resistive-RAM (RRAM), Magnetic-RAM (MRAM), and Nanotube-RAM (NRAM). Each NVM technology at BEOL has its own challenges in program power/energy/speed, thermal stability, read/write stability, endurance, scalability, read/write margins, and degradation by Oxidation, thus, a combination of the NVM technologies at BEOL may offer new applications with capability of stacking-up into 3D array. The CNT-based logic and spin-based logic circuits can be integrated in BEOL and lead to powerful 3D-monolithic integration for new applications with high performance and low power.

Statistically Modeling I-V Characteristics of CNT-FET with LASSO

Science.gov (United States)

Ma, Dongsheng; Ye, Zuochang; Wang, Yan

2017-08-01

With the advent of internet of things (IOT), the need for studying new material and devices for various applications is increasing. Traditionally we build compact models for transistors on the basis of physics. But physical models are expensive and need a very long time to adjust for non-ideal effects. As the vision for the application of many novel devices is not certain or the manufacture process is not mature, deriving generalized accurate physical models for such devices is very strenuous, whereas statistical modeling is becoming a potential method because of its data oriented property and fast implementation. In this paper, one classical statistical regression method, LASSO, is used to model the I-V characteristics of CNT-FET and a pseudo-PMOS inverter simulation based on the trained model is implemented in Cadence. The normalized relative mean square prediction error of the trained model versus experiment sample data and the simulation results show that the model is acceptable for digital circuit static simulation. And such modeling methodology can extend to general devices.

Analysis of Nonlinear Dynamics in Linear Compressors Driven by Linear Motors

Science.gov (United States)

Chen, Liangyuan

2018-03-01

The analysis of dynamic characteristics of the mechatronics system is of great significance for the linear motor design and control. Steady-state nonlinear response characteristics of a linear compressor are investigated theoretically based on the linearized and nonlinear models. First, the influence factors considering the nonlinear gas force load were analyzed. Then, a simple linearized model was set up to analyze the influence on the stroke and resonance frequency. Finally, the nonlinear model was set up to analyze the effects of piston mass, spring stiffness, driving force as an example of design parameter variation. The simulating results show that the stroke can be obtained by adjusting the excitation amplitude, frequency and other adjustments, the equilibrium position can be adjusted by adjusting the DC input, and to make the more efficient operation, the operating frequency must always equal to the resonance frequency.

A square-plate piezoelectric linear motor operating in two orthogonal and isomorphic face-diagonal-bending modes.

Science.gov (United States)

Ci, Penghong; Chen, Zhijiang; Liu, Guoxi; Dong, Shuxiang

2014-01-01

We report a piezoelectric linear motor made of a single Pb(Zr,Ti)O3 square-plate, which operates in two orthogonal and isomorphic face-diagonal-bending modes to produce precision linear motion. A 15 × 15 × 2 mm prototype was fabricated, and the motor generated a driving force of up to 1.8 N and a speed of 170 mm/s under an applied voltage of 100 Vpp at the resonance frequency of 136.5 kHz. The motor shows such advantages as large driving force under relatively low driving voltage, simple structure, and stable motion because of its isomorphic face-diagonal-bending mode.

SEE induced in SRAM operating in a superconducting electron linear accelerator environment

Science.gov (United States)

Makowski, D.; Mukherjee, Bhaskar; Grecki, M.; Simrock, Stefan

2005-02-01

Strong fields of bremsstrahlung photons and photoneutrons are produced during the operation of high-energy electron linacs. Therefore, a mixed gamma and neutron radiation field dominates the accelerators environment. The gamma radiation induced Total Ionizing Dose (TID) effect manifests the long-term deterioration of the electronic devices operating in accelerator environment. On the other hand, the neutron radiation is responsible for Single Event Effects (SEE) and may cause a temporal loss of functionality of electronic systems. This phenomenon is known as Single Event Upset (SEU). The neutron dose (KERMA) was used to scale the neutron induced SEU in the SRAM chips. Hence, in order to estimate the neutron KERMA conversion factor for Silicon (Si), dedicated calibration experiments using an Americium-Beryllium (241Am/Be) neutron standard source was carried out. Single Event Upset (SEU) influences the short-term operation of SRAM compared to the gamma induced TID effect. We are at present investigating the feasibility of an SRAM based real-time beam-loss monitor for high-energy accelerators utilizing the SEU caused by fast neutrons. This paper highlights the effects of gamma and neutron radiations on Static Random Access Memory (SRAM), placed at selected locations near the Superconducting Linear Accelerator driving the Vacuum UV Free Electron Laser (VUVFEL) of DESY.

Prognostic value of 18F-FET PET imaging in re-irradiation of high-grade glioma

DEFF Research Database (Denmark)

Moller, Soren; Law, Ian; Munck af Rosenschöld, Per

2016-01-01

BACKGROUND AND PURPOSE: Positron emission tomography (PET) provides quantitative metabolic information and potential biomarkers of treatment outcome. We aimed to determine the prognostic value of early (18)F-fluoroethyl-tyrosine ((18)F-FET) PET scans acquired during re-irradiation for recurrent...... the metabolically active biological tumor volume (BTV) and maximal activity (Tmax/B). Correlations with outcomes were assessed by multivariate Cox regression analysis. RESULTS: Thirty-one patients were included and all patients have died. The median overall survival was 7.0 mos. Both baseline BTV and baseline MRI...... volume (necrotic/cystic cavities subtracted) were prognostic for overall survival (OS) in multivariate analysis (HR=1.3 pbiological tumor...

[Fetal and early trauma syndrome-FETS].

Science.gov (United States)

Zoroastro, Gastón A

2006-01-01

This is a new clinical description for cases of children whose parents are among those who have disappeared and were given birth by women held prisoners and subjected to torture, humiliation and abuses. This description is considered a special case of early, and in many cases fetal distress. These children felt horror when they were violently separated from their parents immediately after being born in captivity or in early infancy during the last military dictatorship (1976-1983). Afterwards they were sold by their captors and raised as adoptive or as their own children by the purchasers. The fact that these cases be included in the existing WHO categories contained in CIE-10: Posttraumatic stress disorder, F43.1, is discussed as they show late responses on the part of the victims to situations of torture, terrorism and rape. However, it is clarified that cases in which the aftereffects of severe stress become evident after decades will have to be classified as Persistent personality disorders, after catastrophic experience, F62.0. It is concluded that it is necessary to consider FETS as a new combination of manifestations of the Persistent Personality Disorders due to its specific idiosyncratic characteristics that go beyond the available clinical descriptions, to its own etiophatic equation and to its recognizable pathognomonic identification. Its pathognomonic identification in some cases was useful to detect children with these alienated identity problems (understood as legally neglected and clinically alienated). Propedeutic and treatment aspects are mentioned in conjunction with the peculiarities of a therapy that restores the illegally deprived personality of these children, who nowadays are adults of approximately 25 to 29 years of age. Finally, a metapsychologic discussion is presented, which is about the resilience of the truth and the fact that when it is rejected it returns, thus constituting ethics of the truth.

Quad-copter UAV BLDC Motor Control: Linear v/s non-linear control maps

Directory of Open Access Journals (Sweden)

Deep Parikh

2015-08-01

Full Text Available This paper presents some investigations and comparison of using linear versus non-linear static motor-control maps for the speed control of a BLDC (Brush Less Direct Current motors used in quad-copter UAV (Unmanned Aerial Vehicles. The motor-control map considered here is the inverse of the static map relating motor-speed output to motor-voltage input for a typical out-runner type Brushless DC Motors (BLDCM.  Traditionally, quad-copter BLDC motor speed control uses simple linear motor-control map defined by the motor-constant specification. However, practical BLDC motors show non-linear characteristic, particularly when operated across wide operating speed-range as is commonly required in quad-copter UAV flight operations. In this paper, our investigations to compare performance of linear versus non-linear motor-control maps are presented. The investigations cover simulation-based and experimental study of BLDC motor speed control systems for  quad-copter vehicle available. First the non-linear map relating rotor RPM to motor voltage for quad-copter BLDC motor is obtained experimentally using an optical speed encoder. The performance of the linear versus non-linear motor-control-maps for the speed control are studied. The investigations also cover study of time-responses for various standard test input-signals e.g. step, ramp and pulse inputs, applied as the reference speed-commands. Also, simple 2-degree of freedom test-bed is developed in our laboratory to help test the open-loop and closed-loop experimental investigations. The non-linear motor-control map is found to perform better in BLDC motor speed tracking control performance and thereby helping achieve better quad-copter roll-angle attitude control.

Viscosity and Structure of CaO-SiO2-P2O5-FetO System with Varying P2O5 and FeO Content

Science.gov (United States)

Diao, Jiang; Gu, Pan; Liu, De-Man; Jiang, Lu; Wang, Cong; Xie, Bing

2017-10-01

A rotary viscosimeter and Raman spectrum were employed to measure the viscosity and structural information of the CaO-SiO2-P2O5-FetO system at 1673 K. The experimental data have been compared with the calculated results using different viscosity models. It shows that the National Physical Laboratory (NPL) and Pal models fit the CaO-SiO2-P2O5-FeOt system better. With the P2O5 content increasing from 5% to 14%, the viscosity increases from 0.12 Pa s to 0.27 Pa s. With the FeO content increasing from 30% to 40%, the viscosity decreases from 0.21 Pa s to 0.12 Pa s. Increasing FeO content makes the complicated molten melts become simple, and increasing P2O5 content will complicate the molten melts. The linear relation between viscosity and structure parameter Q(Si + P) was obtained by regression analysis. The calculated viscosity by using the optimized NPL and Pal model are almost identical with the fitted values.

A review of linear compressors for refrigeration

OpenAIRE

Liang, Kun

2017-01-01

Linear compressor has no crank mechanism compared with conventional reciprocating compressor. This allows higher efficiency, oil-free operation, lower cost and smaller size when linear compressors are used for vapour compression refrigeration (VCR) system. Typically, a linear compressor consists of a linear motor (connected to a piston) and suspension springs, operated at resonant frequency. This paper presents a review of linear compressors for refrigeration system. Different designs and mod...

18F-FET microPET and microMRI for anti-VEGF and anti-PlGF response assessment in an orthotopic murine model of human glioblastoma

DEFF Research Database (Denmark)

Nedergaard, Mette Kjoelhede; Michaelsen, Signe Regner; Urup, Thomas

2015-01-01

BACKGROUND: Conflicting data exist for anti-cancer effects of anti-placental growth factor (anti-PlGF) in combination with anti-VEGF. Still, this treatment combination has not been evaluated in intracranial glioblastoma (GBM) xenografts. In clinical studies, position emission tomography (PET) using......-FET MicroPET and MicroMRI for evaluation of anti-VEGF and anti-PlGF treatment response in GBM xenografts. METHODS: Mice with intracranial GBM were treated with anti-VEGF, anti-PlGF + anti-VEGF or saline. Bioluminescence imaging (BLI), 18F-FET MicroPET and T2-weighted (T2w)-MRI were used to follow tumour...... development. Primary end-point was survival, and tumours were subsequently analysed for Ki67 proliferation index and micro-vessel density (MVD). Further, PlGF and VEGFR-1 expression were examined in a subset of the xenograft tumours and in 13 GBM patient tumours. RESULTS: Anti-VEGF monotherapy increased...

Field effect transistors based on phosphorene nanoribbon with selective edge-adsorption: A first-principles study

Science.gov (United States)

Hu, Mengli; Yang, Zhixiong; Zhou, Wenzhe; Li, Aolin; Pan, Jiangling; Ouyang, Fangping

2018-04-01

By using density functional theory (DFT) and nonequilibrium Green's function (NEGF), field effect transistor (FET) based on zigzag shaped phosphorene nanoribbons (ZPNR) are investigated. The FETs are constructed with bare-edged ZPNRs as electrodes and H, Cl or OH adsorbed ZPNRs as channel. It is found FETs with the three kinds of channel show similar transport properties. The FET is p-type with a maximum current on/off ratio of 104 and a minimum off-current of 1 nA. The working mode of FETs is dependent on the parity of channel length. It can be either enhancement mode or depletion mode and the off-state current shows an even-odd oscillation. The current oscillations are interpreted with density of states (DOS) analysis and methods of evolution operator and tight-binding Hamiltonian. Operating mechanism of the designed FETs is also presented with projected local density of states and band diagrams.

Increased iron supplied through Fet3p results in replicative life span extension of Saccharomyces cerevisiae under conditions requiring respiratory metabolism.

Science.gov (United States)

Botta, Gabriela; Turn, Christina S; Quintyne, Nicholas J; Kirchman, Paul A

2011-10-01

We have previously shown that copper supplementation extends the replicative life span of Saccharomyces cerevisiae when grown under conditions forcing cells to respire. We now show that copper's effect on life span is through Fet3p, a copper containing enzyme responsible for high affinity transport of iron into yeast cells. Life span extensions can also be obtained by supplementing the growth medium with 1mM ferric chloride. Extension by high iron levels is still dependent on the presence of Fet3p. Life span extension by iron or copper requires growth on media containing glycerol as the sole carbon source, which forces yeast to respire. Yeast grown on glucose containing media supplemented with iron show no extension of life span. The iron associated with cells grown in media supplemented with copper or iron is 1.4-1.8 times that of cells grown without copper or iron supplementation. As with copper supplementation, iron supplementation partially rescues the life span of superoxide dismutase mutants. Cells grown with copper supplementation display decreased production of superoxide as measured by dihydroethidium staining. Copyright © 2011 Elsevier Inc. All rights reserved.

Process informed accurate compact modelling of 14-nm FinFET variability and application to statistical 6T-SRAM simulations

OpenAIRE

Wang, Xingsheng; Reid, Dave; Wang, Liping; Millar, Campbell; Burenkov, Alex; Evanschitzky, Peter; Baer, Eberhard; Lorenz, Juergen; Asenov, Asen

2016-01-01

This paper presents a TCAD based design technology co-optimization (DTCO) process for 14nm SOI FinFET based SRAM, which employs an enhanced variability aware compact modeling approach that fully takes process and lithography simulations and their impact on 6T-SRAM layout into account. Realistic double patterned gates and fins and their impacts are taken into account in the development of the variability-aware compact model. Finally, global process induced variability and local statistical var...

Ascent, descent, nullity, defect, and related notions for linear relations in linear spaces

NARCIS (Netherlands)

Sandovici, Adrian; de Snoo, Henk; Winkler, Henrik

2007-01-01

For a linear relation in a linear space the concepts of ascent, descent, nullity, and defect are introduced and studied. It is shown that the results of A.E. Taylor and M.A. Kaashoek concerning the relationship between ascent, descent, nullity, and defect for the case of linear operators remain

Linear integrated circuits

CERN Document Server

Carr, Joseph

1996-01-01

The linear IC market is large and growing, as is the demand for well trained technicians and engineers who understand how these devices work and how to apply them. Linear Integrated Circuits provides in-depth coverage of the devices and their operation, but not at the expense of practical applications in which linear devices figure prominently. This book is written for a wide readership from FE and first degree students, to hobbyists and professionals.Chapter 1 offers a general introduction that will provide students with the foundations of linear IC technology. From chapter 2 onwa

O-(2-[{sup 18}F]Fluorethyl)-L-tyrosine in the diagnostics of brain tumors; O-(2-[{sup 18}F]Fluorethyl)-L-Tyrosin (FET) in der Diagnostik von Hirntumoren

Energy Technology Data Exchange (ETDEWEB)

Langen, K.J.; Stoffels, G. [Forschungszentrum Juelich (Germany). Inst. fuer Neurowissenschaften und Biophysik - Medizin

2009-06-15

Positron emission tomography (PET) using radiolabeled amino acids has shown great potential for a more accurate diagnosis of cerebral gliomas. Magnetic resonance imaging (MRI) is the investigation of choice for diagnosing cerebral glioma, but its capacity to differentiate tumor tissue from non-specific tissue changes is limited. ([{sup 18}F] Fluorethyl)-L-tyrosine (FET) is a new tracer for PET that can be produced with high efficiency and distributed on a wide clinical scale like [{sup 18}F]-Fluorodeoxyglucose (FDG). The use of FET PET allows better delineation of tumor margins and improves targeting of biopsy and radiotherapy, and planning surgery. In addition, amino acid imaging appears useful in distinguishing tumor recurrence from non-specific post-therapeutic scar tissue, predicting prognosis in low grade gliomas, and monitoring metabolic response during treatment. (orig.)

A FET based kicker for a charge booster for the TRIUMF ISAC project

International Nuclear Information System (INIS)

Barnes, M.J.; Wait, G.D.

2001-07-01

A charge booster unit is required as part of an upgrade to the ISAC facility at TRIUMF. ISAC is an isotope separator coupled to an accelerator. ISAC is presently capable of accelerating only isotopes with atomic mass up to 30. The charge booster will allow ISAC to accelerate all the masses in the periodic table. A fast kicker system has been built to study the characteristics of an existing charge booster, designed by ISN in Grenoble, to assess the suitability of using this charge booster at TRIUMF. This fast kicker will subsequently be used in the TRIUMF ISAC facility for time of flight separation of the chosen charge and to recycle the higher and lower charges back to the charge booster. This will increase the efficiency from 10% to 60%. The kicker system includes a pair of deflector plates. One plate is charged up to -3.5 kV by a PET based modulator, while the other plate is held at ground potential. The modulator consists of two stacks of FETs operating in push pull with variable output voltage, pulse width, and repetition rate from virtually DC to 52 kHz. The measured high voltage output pulse rise and fall times are 63 ns and the minimum pulse width is 350 ns. The maximum pulse width is dependent upon the repetition rate. The large dynamic range for the repetition rate and pulse width required a novel circuit design and control technique, which also resulted in an energy efficient kicker system. This paper describes the design of the kicker system and shows the results of measurements. (author)

Functional models for commutative systems of linear operators and de Branges spaces on a Riemann surface

International Nuclear Information System (INIS)

Zolotarev, Vladimir A

2009-01-01

Functional models are constructed for commutative systems {A 1 ,A 2 } of bounded linear non-self-adjoint operators which do not contain dissipative operators (which means that ξ 1 A 1 +ξ 2 A 2 is not a dissipative operator for any ξ 1 , ξ 2 element of R). A significant role is played here by the de Branges transform and the function classes occurring in this context. Classes of commutative systems of operators {A 1 ,A 2 } for which such a construction is possible are distinguished. Realizations of functional models in special spaces of meromorphic functions on Riemann surfaces are found, which lead to reasonable analogues of de Branges spaces on these Riemann surfaces. It turns out that the functions E(p) and E-tilde(p) determining the order of growth in de Branges spaces on Riemann surfaces coincide with the well-known Baker-Akhiezer functions. Bibliography: 11 titles.

Assessment of various strategies for 18F-FET PET-guided delineation of target volumes in high-grade glioma patients.

Science.gov (United States)

Vees, Hansjörg; Senthamizhchelvan, Srinivasan; Miralbell, Raymond; Weber, Damien C; Ratib, Osman; Zaidi, Habib

2009-02-01

The purpose of the study is to assess the contribution of (18)F-fluoro-ethyl-tyrosine ((18)F-FET) positron emission tomography (PET) in the delineation of gross tumor volume (GTV) in patients with high-grade gliomas compared with magnetic resonance imaging (MRI) alone. The study population consisted of 18 patients with high-grade gliomas. Seven image segmentation techniques were used to delineate (18)F-FET PET GTVs, and the results were compared to the manual MRI-derived GTV (GTV(MRI)). PET image segmentation techniques included manual delineation of contours (GTV(man)), a 2.5 standardized uptake value (SUV) cutoff (GTV(2.5)), a fixed threshold of 40% and 50% of the maximum signal intensity (GTV(40%) and GTV(50%)), signal-to-background ratio (SBR)-based adaptive thresholding (GTV(SBR)), gradient find (GTV(GF)), and region growing (GTV(RG)). Overlap analysis was also conducted to assess geographic mismatch between the GTVs delineated using the different techniques. Contours defined using GTV(2.5) failed to provide successful delineation technically in three patients (18% of cases) as SUV(max) segmentation algorithm is crucial, since it impacts both the volume and shape of the resulting GTV. The 2.5 SUV isocontour and GF segmentation techniques performed poorly and should not be used for GTV delineation. With adequate setting, the SBR-based PET technique may add considerably to conventional MRI-guided GTV delineation.

A three-dimensional (3D) analytical model for subthreshold characteristics of uniformly doped FinFET

Science.gov (United States)

Tripathi, Shweta; Narendar, Vadthiya

2015-07-01

In this paper, three dimensional (3D) analytical model for subthreshold characteristics of doped FinFET has been presented. The separation of variables technique is used to solve the 3D Poisson's equation analytically with appropriate boundary conditions so as to obtain the expression for channel potential. The thus obtained potential distribution function has been employed in deriving subthreshold current and subthreshold slope model. The channel potential characteristics have been studied as a function of various device parameters such as gate length, gate oxide thickness and channel doping. The proposed analytical model results have been validated by comparing with the simulation data obtained by the 3D device simulator ATLAS™ from Silvaco.

Short primary linear drive designed for synchronous and induction operation mode with on-board energy storage

Energy Technology Data Exchange (ETDEWEB)

Fernandes Neto, Tobias Rafael

2012-06-28

guide way (induction rail or stationary magnets), and the energy and information should be transmitted contactless to the active vehicle. Regarding the features of the material handling application, the short or long primary topology can be used. Short primary linear drives on passive track are advantageous in material handling applications, where high precision, moderate dynamic, very long track and closed paths are required. Nevertheless, depending on the requirements of the section, the costs can be reduced considerably by using a simple induction rail at the long transporting sections, instead of permanent magnets on the track. Therefore, in this thesis a combined operation of permanent magnet linear synchronous motor (PMLSM) and linear induction motor (LIM) is applied to operate the short primary as vehicle, avoiding adjustment or releasing of the material during the drive cycle. In summary, the passive track will consist of two section types: a high thrust force section (processing station) with PMLSM and a low thrust force section with LIM (transporting section). To the author's knowledge, using two operation modes (PMLSM / LIM) in the same drive is a new approach. A theoretical and experimental study was conducted to assess the feasibility of employing the short primary linear motor for a flexible manufacturing system, in which a contactless energy transmission provides the basic power and an ultracapacitor (UC) storage system provides the peak power. The system uses a bidirectional DC-DC converter between the ultracapacitor bank and the DC-link, to make sure that the ultracapacitor can store the braking energy and supply the peak power demanded by the active vehicle. A control strategy has been developed for controlling the ultracapacitor to deliver the peak of power, to charge, to protect against overvoltage and to recover the energy generated when the vehicle is braking. A control strategy for the transition between the two operation modes (PMLSM / LIM

Analysis and optimization of RC delay in vertical nanoplate FET

Science.gov (United States)

Woo, Changbeom; Ko, Kyul; Kim, Jongsu; Kim, Minsoo; Kang, Myounggon; Shin, Hyungcheol

2017-10-01

In this paper, we have analyzed short channel effects (SCEs) and RC delay with Vertical nanoplate FET (VNFET) using 3-D Technology computer-aided design (TCAD) simulation. The device is based on International Technology Road-map for Semiconductor (ITRS) 2013 recommendations, and it has initially gate length (LG) of 12.2 nm, channel thickness (Tch) of 4 nm, and spacer length (LSD) of 6 nm. To obtain improved performance by reducing RC delay, each dimension is adjusted (LG = 12.2 nm, Tch = 6 nm, LSD = 11.9 nm). It has each characteristic in this dimension (Ion/Ioff = 1.64 × 105, Subthreshold swing (S.S.) = 73 mV/dec, Drain-induced barrier lowering (DIBL) = 60 mV/V, and RC delay = 0.214 ps). Furthermore, with long shallow trench isolation (STI) length and thick insulator thickness (Ti), we can reduce RC delay from 0.214 ps to 0.163 ps. It is about a 23.8% reduction. Without decreasing drain current, there is a reduction of RC delay as reducing outer fringing capacitance (Cof). Finally, when source/drain spacer length is set to be different, we have verified RC delay to be optimum.

A 2D analytical cylindrical gate tunnel FET (CG-TFET) model: impact of shortest tunneling distance

Science.gov (United States)

Dash, S.; Mishra, G. P.

2015-09-01

A 2D analytical tunnel field-effect transistor (FET) potential model with cylindrical gate (CG-TFET) based on the solution of Laplace’s equation is proposed. The band-to-band tunneling (BTBT) current is derived by the help of lateral electric field and the shortest tunneling distance. However, the analysis is extended to obtain the subthreshold swing (SS) and transfer characteristics of the device. The dependency of drain current, SS and transconductance on gate voltage and shortest tunneling distance is discussed. Also, the effect of scaling the gate oxide thickness and the cylindrical body diameter on the electrical parameters of the device is analyzed.

A 2D analytical cylindrical gate tunnel FET (CG-TFET) model: impact of shortest tunneling distance

International Nuclear Information System (INIS)

Dash, S; Mishra, G P

2015-01-01

A 2D analytical tunnel field-effect transistor (FET) potential model with cylindrical gate (CG-TFET) based on the solution of Laplace’s equation is proposed. The band-to-band tunneling (BTBT) current is derived by the help of lateral electric field and the shortest tunneling distance. However, the analysis is extended to obtain the subthreshold swing (SS) and transfer characteristics of the device. The dependency of drain current, SS and transconductance on gate voltage and shortest tunneling distance is discussed. Also, the effect of scaling the gate oxide thickness and the cylindrical body diameter on the electrical parameters of the device is analyzed. (paper)

The optimal design of 15 nm gate-length junctionless SOI FinFETs for reducing leakage current

International Nuclear Information System (INIS)

Liu, Xi; Wu, Meile; Jin, Xiaoshi; Chuai, Rongyan; Lee, Jung-Hee; Lee, Jong-Ho

2013-01-01

Junctionless (JL) transistors need to be heavily doped to have large drain current in the ON-state, which engenders the effect of band-to-band tunneling (BTBT) in the OFF-state simultaneously. It causes an obvious increase of the leakage current in the OFF-state. This paper presents an effective method of reducing the leakage current by changing the geometrical shape and dimension of the oxide layer under the edge of the gate. The optimal design of 15 nm gate-length JL silicon-on-insulator FinFETs with the triple-gate structure is performed for reducing the effect of BTBT through simulation and analysis by this means. (paper)

Single-Event Effect Testing of the Vishay Si7414DN n-Type TrenchFET(Registered Trademark) Power MOSFET

Science.gov (United States)

Lauenstein, J.-M.; Casey, M. C.; Campola, M. A.; Phan, A. M.; Wilcox, E. P.; Topper, A. D.; Ladbury, R. L.

2017-01-01

This study was being undertaken to determine the single event effect susceptibility of the commercial Vishay 60-V TrenchFET power MOSFET. Heavy-ion testing was conducted at the Texas AM University Cyclotron Single Event Effects Test Facility (TAMU) and the Lawrence Berkeley National Laboratory BASE Cyclotron Facility (LBNL). In addition, initial 200-MeV proton testing was conducted at Massachusetts General Hospital (MGH) Francis H. Burr Proton Beam Therapy Center. Testing was performed to evaluate this device for single-event effects from lower-LET, lighter ions relevant to higher risk tolerant space missions.

Choice of initial operating parameters for high average current linear accelerators

International Nuclear Information System (INIS)

Batchelor, K.

1976-01-01

Recent emphasis on alternative energy sources together with the need for intense neutron sources for testing of materials for CTR has resulted in renewed interest in high current (approximately 100 mA) c.w. proton and deuteron linear accelerators. In desinging an accelerator for such high currents, it is evident that beam losses in the machine must be minimized, which implies well matched beams, and that adequate acceptance under severe space charge conditions must be met. An investigation is presented of the input parameters to an Alvarez type drift-tube accelerator resulting from such factors. The analysis indicates that an accelerator operating at a frequency of 50 MHz is capable of accepting deuteron currents of about 0.4 amperes and proton currents of about 1.2 amperes. These values depend critically on the assumed values of beam emittance and on the ability to properly ''match'' this to the linac acceptance

Research on the intermediate process of a free-piston linear generator from cold start-up to stable operation: Numerical model and experimental results

International Nuclear Information System (INIS)

Feng, Huihua; Guo, Chendong; Jia, Boru; Zuo, Zhengxing; Guo, Yuyao; Roskilly, Tony

2016-01-01

Highlights: • The intermediate process of free-piston linear generator is investigated for the first time. • “Gradually switching strategy” is the best strategy in the intermediate process. • Switching at the top dead center position timing has the least influences on free-piston linear generator. • After the intermediate process, the operation parameters value is smaller than those before the intermediate process. - Abstract: The free-piston linear generator (FPLG) has more merits than the traditional reciprocating engines (TRE), and has been under extensive investigation. Researchers mainly investigated on the starting process and the stable generating process of FPLG, while there has not been any report on the intermediate process from the engine cold start-up to stable operation process. Therefore, this paper investigated the intermediate process of the FPLG in terms of switching strategy and switching position based on simulation results and test results. Results showed that when the motor force of the linear electric machine (LEM) declined gradually from 100% to 0% with an interval of 50%, and then to a resistance force in the opposite direction of piston velocity (generator mode), the operation parameters of the FPLG showed minimal changes. Meanwhile, the engine operated more smoothly when the LEM switched its working mode from a motor to a generator at the piston dead center, compared with that at the middle stroke or a random switching time. More importantly, after the intermediate process, the operation parameters of FPLG were smaller than that before the intermediate process. As a result, a gradual motor/generator switching strategy was recommended and the LEM was suggested to switch its working mode when the piston arrived its dead center in order to achieve smooth engine operation.

Linearization of CIF through SOS

NARCIS (Netherlands)

Nadales Agut, D.E.; Reniers, M.A.; Luttik, B.; Valencia, F.

2011-01-01

Linearization is the procedure of rewriting a process term into a linear form, which consist only of basic operators of the process language. This procedure is interesting both from a theoretical and a practical point of view. In particular, a linearization algorithm is needed for the Compositional

vSmartMOM: A vector matrix operator method-based radiative transfer model linearized with respect to aerosol properties

International Nuclear Information System (INIS)

Sanghavi, Suniti; Davis, Anthony B.; Eldering, Annmarie

2014-01-01

In this paper, we build up on the scalar model smartMOM to arrive at a formalism for linearized vector radiative transfer based on the matrix operator method (vSmartMOM). Improvements have been made with respect to smartMOM in that a novel method of computing intensities for the exact viewing geometry (direct raytracing) without interpolation between quadrature points has been implemented. Also, the truncation method employed for dealing with highly peaked phase functions has been changed to a vector adaptation of Wiscombe's delta-m method. These changes enable speedier and more accurate radiative transfer computations by eliminating the need for a large number of quadrature points and coefficients for generalized spherical functions. We verify our forward model against the benchmarking results of Kokhanovsky et al. (2010) [22]. All non-zero Stokes vector elements are found to show agreement up to mostly the seventh significant digit for the Rayleigh atmosphere. Intensity computations for aerosol and cloud show an agreement of well below 0.03% and 0.05% at all viewing angles except around the solar zenith angle (60°), where most radiative models demonstrate larger variances due to the strongly forward-peaked phase function. We have for the first time linearized vector radiative transfer based on the matrix operator method with respect to aerosol optical and microphysical parameters. We demonstrate this linearization by computing Jacobian matrices for all Stokes vector elements for a multi-angular and multispectral measurement setup. We use these Jacobians to compare the aerosol information content of measurements using only the total intensity component against those using the idealized measurements of full Stokes vector [I,Q,U,V] as well as the more practical use of only [I,Q,U]. As expected, we find for the considered example that the accuracy of the retrieved parameters improves when the full Stokes vector is used. The information content for the full Stokes

Advanced linear algebra for engineers with Matlab

CERN Document Server

Dianat, Sohail A

2009-01-01

Matrices, Matrix Algebra, and Elementary Matrix OperationsBasic Concepts and NotationMatrix AlgebraElementary Row OperationsSolution of System of Linear EquationsMatrix PartitionsBlock MultiplicationInner, Outer, and Kronecker ProductsDeterminants, Matrix Inversion and Solutions to Systems of Linear EquationsDeterminant of a MatrixMatrix InversionSolution of Simultaneous Linear EquationsApplications: Circuit AnalysisHomogeneous Coordinates SystemRank, Nu

Analysis of Self-Heating Effects on vertical FET according to Shallow Trench Isolation

Science.gov (United States)

Myeong, Ilho; Son, Dokyun; Kim, Hyunsuk; Kang, Myounggon; Shin, Hyungcheol

2017-11-01

In this paper, Self-Heating Effect (SHE) according to depth of STI was analyzed and STI thickness optimization was performed in the plate-shaped vertical field effect transistor (VFET). In case of a VFET, the path of leakage current (Ioff) is different from that of a lateral FET (LFET). As a result, Ioff of VFET is not influenced by STI depth. For this reason, the STI depth of the VFET is not needed as much as the depth needed to reduce Ioff in the LFET. As a result, if the STI depth of the VFET is reduced from 100 nm to 20 nm, which is the drain region depth doped with Arsenic, thermal resistance (Rth) is expected to be reduced by 32.19% and on current (Ion) is expected to be increased by 1.54% without affecting the Ioff as compared with STI depth of 100 nm in VFET.

PWR control system design using advanced linear and non-linear methodologies

International Nuclear Information System (INIS)

Rabindran, N.; Whitmarsh-Everiss, M.J.

2004-01-01

Consideration is here given to the methodology deployed for non-linear heuristic analysis in the time domain supported by multi-variable linear control system design methods for the purposes of operational dynamics and control system analysis. This methodology is illustrated by the application of structural singular value μ analysis to Pressurised Water Reactor control system design. (author)

Ultra-Low-Dropout Linear Regulator

Science.gov (United States)

Thornton, Trevor; Lepkowski, William; Wilk, Seth

2011-01-01

A radiation-tolerant, ultra-low-dropout linear regulator can operate between -150 and 150 C. Prototype components were demonstrated to be performing well after a total ionizing dose of 1 Mrad (Si). Unlike existing components, the linear regulator developed during this activity is unconditionally stable over all operating regimes without the need for an external compensation capacitor. The absence of an external capacitor reduces overall system mass/volume, increases reliability, and lowers cost. Linear regulators generate a precisely controlled voltage for electronic circuits regardless of fluctuations in the load current that the circuit draws from the regulator.

Performance test of 100 W linear compressor

Energy Technology Data Exchange (ETDEWEB)

Ko, J; Ko, D. Y.; Park, S. J.; Kim, H. B.; Hong, Y. J.; Yeom, H. K. [Korea Institute of Machinery and Materials, Daejeon(Korea, Republic of)

2013-09-15

In this paper, we present test results of developed 100 W class linear compressor for Stirling-type pulse tube refrigerator. The fabricated linear compressor has dual-opposed configuration, free piston and moving magnet type linear motor. Power transfer, efficiency and required pressure waveform are predicted with designed and measured specifications. In experiments, room temperature test with flow impedance is conducted to evaluate performance of developed linear compressor. Flow impedance is loaded to compressor with metering valve for flow resistance, inertance tube for flow inertance and buffer volumes for flow compliance. Several operating parameters such as input voltage, current, piston displacement and pressure wave are measured for various operating frequency and fixed input current level. Behaviors of dynamics and performance of linear compressor as varying flow impedance are discussed with measured experimental results. The developed linear compressor shows 124 W of input power, 86 % of motor efficiency and 60 % of compressor efficiency at its resonant operating condition.

Pulsed laser deposition of oxide gate dielectrics for pentacene organic field-effect transistors

International Nuclear Information System (INIS)

Yaginuma, S.; Yamaguchi, J.; Itaka, K.; Koinuma, H.

2005-01-01

We have fabricated Al 2 O 3 , LaAlO 3 (LAO), CaHfO 3 (CHO) and CaZrO 3 (CZO) thin films for the dielectric layers of field-effect transistors (FETs) by pulsed laser deposition (PLD). The films exhibited very smooth surfaces with root-mean-squares (rms) roughnesses of ∼1.3 A as evaluated by using atomic force microscopy (AFM). The breakdown electric fields of Al 2 O 3 , LAO, CHO and CZO films were 7, 6, 10 and 2 MV/cm, respectively. The magnitude of the leak current in each film was low enough to operate FET. We performed a comparative study of pentacene FET fabricated using these oxide dielectrics as gate insulators. High field-effect mobility of 1.4 cm 2 /V s and on/off current ratio of 10 7 were obtained in the pentacene FET using LAO gate insulating film. Use of the LAO films as gate dielectrics has been found to suppress the hysteresis of pentacene FET operations. The LAO films are relevant to the dielectric layer of organic FETs

Comparison of linear, mixed integer and non-linear programming methods in energy system dispatch modelling

DEFF Research Database (Denmark)

Ommen, Torben Schmidt; Markussen, Wiebke Brix; Elmegaard, Brian

2014-01-01

In the paper, three frequently used operation optimisation methods are examined with respect to their impact on operation management of the combined utility technologies for electric power and DH (district heating) of eastern Denmark. The investigation focusses on individual plant operation...... differences and differences between the solution found by each optimisation method. One of the investigated approaches utilises LP (linear programming) for optimisation, one uses LP with binary operation constraints, while the third approach uses NLP (non-linear programming). The LP model is used...... as a benchmark, as this type is frequently used, and has the lowest amount of constraints of the three. A comparison of the optimised operation of a number of units shows significant differences between the three methods. Compared to the reference, the use of binary integer variables, increases operation...

Process and device integration for silicon tunnel FETs utilizing isoelectronic trap technology to enhance the ON current

Science.gov (United States)

Mori, Takahiro; Asai, Hidehiro; Fukuda, Koichi; Matsukawa, Takashi

2018-04-01

A tunnel FET (TFET) is a candidate replacement for conventional MOSFETs to realize low-power LSI. The most significant issue with the practical application of TFETs concerns their low tunneling current. Si is an indirect-gap material with a low band-to-band tunneling probability and is not favored for the channel. However, a new technology has recently been proposed to enhance the tunneling current in Si-TFETs by utilizing isoelectronic trap (IET) technology. IET technology provides an innovative approach to realizing low-power LSI with TFETs. In this paper, state-of-the-art research on Si-TFETs with IET technology from the viewpoint of process and device integration is reviewed.

Distributional chaos for linear operators

Czech Academy of Sciences Publication Activity Database

Bernardes Jr., N.C.; Bonilla, A.; Müller, Vladimír; Peris, A.

2013-01-01

Roč. 265, č. 9 (2013), s. 2143-2163 ISSN 0022-1236 R&D Projects: GA ČR GA201/09/0473 Institutional support: RVO:67985840 Keywords : distributional chaos * hypercyclic operators * irregular vectors Subject RIV: BA - General Mathematics Impact factor: 1.152, year: 2013 http://www.sciencedirect.com/science/article/pii/S0022123613002450

Operational results for the raster scanning power supply system constructed at the Bevalac Biomedical Facility

International Nuclear Information System (INIS)

Stover, G.; Halliwell, J.; Nyman, M.; Dwinell, R.

1989-03-01

A raster scanning power supply for controlling an 8.0 Tesla-meter relativistic heavy-ion beam at the Biomedical Facility has been recently completed and is undergoing electrical testing before on- line operation in 1989. The scanner system will provide tightly controlled beam uniformity and off-axis treatment profiles with large aspect ratios and unusual dimensions. This article will discuss original specifications, agreement with measured results and special device performance (i.e. GTOs, FET actuator assembly, etc.). 5 refs., 4 figs

Flexible and transparent silicon-on-polymer based sub-20 nm non-planar 3D FinFET for brain-architecture inspired computation

KAUST Repository

Sevilla, Galo T.; Rojas, Jhonathan Prieto; Fahad, Hossain M.; Hussain, Aftab M.; Ghanem, Rawan; Smith, Casey; Hussain, Muhammad Mustafa

2014-01-01

An industry standard 8′′ silicon-on-insulator wafer based ultra-thin (1 μm), ultra-light-weight, fully flexible and remarkably transparent state-of-the-art non-planar three dimensional (3D) FinFET is shown. Introduced by Intel Corporation in 2011 as the most advanced transistor architecture, it reveals sub-20 nm features and the highest performance ever reported for a flexible transistor. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Flexible and transparent silicon-on-polymer based sub-20 nm non-planar 3D FinFET for brain-architecture inspired computation

KAUST Repository

Sevilla, Galo T.

2014-02-22

An industry standard 8′′ silicon-on-insulator wafer based ultra-thin (1 μm), ultra-light-weight, fully flexible and remarkably transparent state-of-the-art non-planar three dimensional (3D) FinFET is shown. Introduced by Intel Corporation in 2011 as the most advanced transistor architecture, it reveals sub-20 nm features and the highest performance ever reported for a flexible transistor. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Linear quantum optical bare raising operator

Science.gov (United States)

Radtke, Jennifer C. J.; Oi, Daniel K. L.; Jeffers, John

2017-11-01

We propose a simple implementation of the bare raising operator on coherent states via conditional measurement, which succeeds with high probability and fidelity. This operation works well not only on states with a Poissonian photon number distribution but also for a much wider class of states. As a part of this scheme, we highlight an experimentally testable effect in which a single photon is induced through a highly reflecting beamsplitter by a large amplitude coherent state, with probability 1/e(≈ 37 % ) in the limit of large coherent state amplitude.

Action of the complex Monge-Ampère operator on piecewise-linear functions and exponential tropical varieties

International Nuclear Information System (INIS)

Kazarnovskii, B Ya

2014-01-01

We consider exponential tropical varieties, which appear as analogues of algebraic tropical varieties when we pass from algebraic varieties to varieties given by zero sets of systems of exponential sums. We describe a construction of exponential tropical varieties arising from the action of the complex Monge-Ampère operator on piecewise-linear functions and show that every such variety can be obtained in this way. As an application, we deduce a criterion for the vanishing of the value of the mixed Monge-Ampère operator. This is an analogue and generalization of the criterion for the vanishing of the mixed volume of convex bodies

Pros and cons of symmetrical dual-k spacer technology in hybrid FinFETs

Science.gov (United States)

Pradhan, K. P.; Andrade, M. G. C.; Sahu, P. K.

2016-12-01

The symmetrical dual-k spacer technology in hybrid FinFETs has been widely explored for better electrostatic control of the fin-based devices in nanoscale region. Since, high-k tangible spacer materials are broadly became a matter of study due to their better immunity to the short channel effects (SCEs) in nano devices. However, the only cause that restricts the circuit designers from using high-k spacer is the unreasonable increasing fringing capacitances. This work quantitatively analyzed the benefits and drawbacks of considering two different dielectric spacer materials symmetrically in either sides of the channel for the hybrid device. From the demonstrated results, the inclusion of high-k spacer predicts an effective reduction in off-state leakage along with an improvement in drive current. However, these devices have paid the cost in terms of a high total gate-to-gate capacitance (Cgg) that consequently results poor cutoff frequency (fT) and delay.

Integrated MSM-FET photoreceiver fabricated on MOCVD grown Hg2-xCdxTe

International Nuclear Information System (INIS)

Leech, P.W.; Gwynn, P.J.; Pain, G.N.; Petkovic, N.R.; Thompson, J.; Jamieson, D.N.

1991-01-01

This paper reports on progress in the monolithic integration of a metal-semiconductor-metal (MSM) detector and transimpedance amplifier and of a photoconductive detector (PCD) with a metal-semiconductor field effect transistor (MESFET) in Hg 1-x Cd x Te. The layers of CdTe/n-type Hg 1-x Cd x Te were grown by MOCVD on semi-insulating GaAs substrates (2 0 misoriented 100). Fabrication of the devices was by an FET planar process; with a standard lift-off used to form Schottky metallization on both the interdigitated electrodes of the MSM detector (2 μm width, 2 μm spacing) and the gate of the MESFETs (5μm length, 100μm width). The MSM photodetectors exhibited breakdown voltages in the range 60 to 80V, a dark current of 10na at 5V bias, and responsivities of >1.0 A/W measured at 40V using CW 1.3 μm illumination

Cavity digital control testing system by Simulink step operation method for TESLA linear accelerator and free electron laser

Science.gov (United States)

Czarski, Tomasz; Romaniuk, Ryszard S.; Pozniak, Krzysztof T.; Simrock, Stefan

2004-07-01

The cavity control system for the TESLA -- TeV-Energy Superconducting Linear Accelerator project is initially introduced in this paper. The FPGA -- Field Programmable Gate Array technology has been implemented for digital controller stabilizing cavity field gradient. The cavity SIMULINK model has been applied to test the hardware controller. The step operation method has been developed for testing the FPGA device coupled to the SIMULINK model of the analog real plant. The FPGA signal processing has been verified according to the required algorithm of the reference MATLAB controller. Some experimental results have been presented for different cavity operational conditions.

Basic operator theory

CERN Document Server

Gohberg, Israel

2001-01-01

rii application of linear operators on a Hilbert space. We begin with a chapter on the geometry of Hilbert space and then proceed to the spectral theory of compact self adjoint operators; operational calculus is next presented as a nat­ ural outgrowth of the spectral theory. The second part of the text concentrates on Banach spaces and linear operators acting on these spaces. It includes, for example, the three 'basic principles of linear analysis and the Riesz­ Fredholm theory of compact operators. Both parts contain plenty of applications. All chapters deal exclusively with linear problems, except for the last chapter which is an introduction to the theory of nonlinear operators. In addition to the standard topics in functional anal­ ysis, we have presented relatively recent results which appear, for example, in Chapter VII. In general, in writ­ ing this book, the authors were strongly influenced by re­ cent developments in operator theory which affected the choice of topics, proofs and exercises. One ...

Atomic defects in monolayer WSe2 tunneling FETs studied by systematic ab initio calculations

Science.gov (United States)

Wu, Jixuan; Fan, Zhiqiang; Chen, Jiezhi; Jiang, Xiangwei

2018-05-01

Atomic defects in monolayer WSe2 tunneling FETs (TFETs) are studied through systematic ab initio calculations aiming at performance predictions and enhancements. The effects of various defect positions and different passivation atoms are characterized in WSe2 TFETs by rigorous ab initio quantum transport simulations. It is suggested that the Se vacancy (VSe) defect located in the gate-controlled channel region tends to increase the OFF current (I off), whereas it can be well suppressed by oxygen passivation. It is demonstrated that chlorine (Cl) passivation at the source-side tunneling region can largely suppress I off, leading to an impressively improved on–off ratio (I on/I off) compared with that without any defect. However, it is also observed that randomly positioned atomic defects tend to induce significant fluctuation of the TFET output. Further discussions are made with focus on the performance-variability trade-off for robust circuit design.

Performance Evaluation of 14 nm FinFET-Based 6T SRAM Cell Functionality for DC and Transient Circuit Analysis

OpenAIRE

Wei Lim; Huei Chaeng Chin; Cheng Siong Lim; Michael Loong Peng Tan

2014-01-01

As the technology node size decreases, the number of static random-access memory (SRAM) cells on a single word line increases. The coupling capacitance will increase with the increase of the load of word line, which reduces the performance of SRAM, more obvious in the SRAM signal delay and the SRAM power usage. The main purpose of this study is to investigate the stability and evaluate the power consumption of a 14 nm gate length FinFET-based 6T SRAM cell functionality for direct current (DC)...

Linear motor coil assembly and linear motor

NARCIS (Netherlands)

2009-01-01

An ironless linear motor (5) comprising a magnet track (53) and a coil assembly (50) operating in cooperation with said magnet track (53) and having a plurality of concentrated multi-turn coils (31 a-f, 41 a-d, 51 a-k), wherein the end windings (31E) of the coils (31 a-f, 41 a-e) are substantially

Mean anisotropy of homogeneous Gaussian random fields and anisotropic norms of linear translation-invariant operators on multidimensional integer lattices

Directory of Open Access Journals (Sweden)

Phil Diamond

2003-01-01

Full Text Available Sensitivity of output of a linear operator to its input can be quantified in various ways. In Control Theory, the input is usually interpreted as disturbance and the output is to be minimized in some sense. In stochastic worst-case design settings, the disturbance is considered random with imprecisely known probability distribution. The prior set of probability measures can be chosen so as to quantify how far the disturbance deviates from the white-noise hypothesis of Linear Quadratic Gaussian control. Such deviation can be measured by the minimal Kullback-Leibler informational divergence from the Gaussian distributions with zero mean and scalar covariance matrices. The resulting anisotropy functional is defined for finite power random vectors. Originally, anisotropy was introduced for directionally generic random vectors as the relative entropy of the normalized vector with respect to the uniform distribution on the unit sphere. The associated a-anisotropic norm of a matrix is then its maximum root mean square or average energy gain with respect to finite power or directionally generic inputs whose anisotropy is bounded above by a≥0. We give a systematic comparison of the anisotropy functionals and the associated norms. These are considered for unboundedly growing fragments of homogeneous Gaussian random fields on multidimensional integer lattice to yield mean anisotropy. Correspondingly, the anisotropic norms of finite matrices are extended to bounded linear translation invariant operators over such fields.

Macroscopic and non-linear quantum games

International Nuclear Information System (INIS)

Aerts, D.; D'Hooghe, A.; Posiewnik, A.; Pykacz, J.

2005-01-01

Full text: We consider two models of quantum games. The first one is Marinatto and Weber's 'restricted' quantum game in which only the identity and the spin-flip operators are used. We show that this quantum game allows macroscopic mechanistic realization with the use of a version of the 'macroscopic quantum machine' described by Aerts already in 1980s. In the second model we use non-linear quantum state transformations which operate on points of spin-1/2 on the Bloch sphere and which can be used to distinguish optimally between two non-orthogonal states. We show that efficiency of these non-linear strategies out-perform any linear ones. Some hints on the possible theory of non-linear quantum games are given. (author)

Feedback systems for linear colliders

CERN Document Server

Hendrickson, L; Himel, Thomas M; Minty, Michiko G; Phinney, N; Raimondi, Pantaleo; Raubenheimer, T O; Shoaee, H; Tenenbaum, P G

1999-01-01

Feedback systems are essential for stable operation of a linear collider, providing a cost-effective method for relaxing tight tolerances. In the Stanford Linear Collider (SLC), feedback controls beam parameters such as trajectory, energy, and intensity throughout the accelerator. A novel dithering optimization system which adjusts final focus parameters to maximize luminosity contributed to achieving record performance in the 1997-98 run. Performance limitations of the steering feedback have been investigated, and improvements have been made. For the Next Linear Collider (NLC), extensive feedback systems are planned as an intregal part of the design. Feedback requiremetns for JLC (the Japanese Linear Collider) are essentially identical to NLC; some of the TESLA requirements are similar but there are significant differences. For NLC, algorithms which incorporate improvements upon the SLC implementation are being prototyped. Specialized systems for the damping rings, rf and interaction point will operate at hi...

Separable quadratic stochastic operators

International Nuclear Information System (INIS)

Rozikov, U.A.; Nazir, S.

2009-04-01

We consider quadratic stochastic operators, which are separable as a product of two linear operators. Depending on properties of these linear operators we classify the set of the separable quadratic stochastic operators: first class of constant operators, second class of linear and third class of nonlinear (separable) quadratic stochastic operators. Since the properties of operators from the first and second classes are well known, we mainly study the properties of the operators of the third class. We describe some Lyapunov functions of the operators and apply them to study ω-limit sets of the trajectories generated by the operators. We also compare our results with known results of the theory of quadratic operators and give some open problems. (author)

Elementary operators on self-adjoint operators

Science.gov (United States)

Molnar, Lajos; Semrl, Peter

2007-03-01

Let H be a Hilbert space and let and be standard *-operator algebras on H. Denote by and the set of all self-adjoint operators in and , respectively. Assume that and are surjective maps such that M(AM*(B)A)=M(A)BM(A) and M*(BM(A)B)=M*(B)AM*(B) for every pair , . Then there exist an invertible bounded linear or conjugate-linear operator and a constant c[set membership, variant]{-1,1} such that M(A)=cTAT*, , and M*(B)=cT*BT, .

Operational calculus

CERN Document Server

Boehme, Thomas K

1987-01-01

Operational Calculus, Volume II is a methodical presentation of operational calculus. An outline of the general theory of linear differential equations with constant coefficients is presented. Integral operational calculus and advanced topics in operational calculus, including locally integrable functions and convergence in the space of operators, are also discussed. Formulas and tables are included.Comprised of four sections, this volume begins with a discussion on the general theory of linear differential equations with constant coefficients, focusing on such topics as homogeneous and non-ho

Linear Colliders TESLA

International Nuclear Information System (INIS)

Anon.

1994-01-01

The aim of the TESLA (TeV Superconducting Linear Accelerator) collaboration (at present 19 institutions from seven countries) is to establish the technology for a high energy electron-positron linear collider using superconducting radiofrequency cavities to accelerate its beams. Another basic goal is to demonstrate that such a collider can meet its performance goals in a cost effective manner. For this the TESLA collaboration is preparing a 500 MeV superconducting linear test accelerator at the DESY Laboratory in Hamburg. This TTF (TESLA Test Facility) consists of four cryomodules, each approximately 12 m long and containing eight 9-cell solid niobium cavities operating at a frequency of 1.3 GHz

18 octobre 2013 - Le Préfet de l’Ain L. Touvet signe le livre d'or avec le Directeur général du CERN R. Heuer et le Chef du Département Technologie F. Bordry. Photo de groupe, de gauche à droite: T. Kupisz, Secrétaire général de la sous préfecture de Gex; L. Miralles, Chef du Département Infrastructure et services généraux; F. Eder, Délégué aux Relations avec les Etats hôtes; S. Donnot, Sous-préfet de Gex; L. Touvet, Préfet de l'Ain; E. Sches, Sous-préfète de Nantua; E.Gröniger-Voss, Conseiller juridique du CERN; R. Heuer, Directeur général; F. Bordry, Chef du Département Technologie et P. Bloch, Chef du Département Physique.

CERN Multimedia

Anna Pantelia

2013-01-01

18 octobre 2013 - Le Préfet de l’Ain L. Touvet signe le livre d'or avec le Directeur général du CERN R. Heuer et le Chef du Département Technologie F. Bordry. Photo de groupe, de gauche à droite: T. Kupisz,\tSecrétaire général de la sous préfecture de Gex; L. Miralles, Chef du Département Infrastructure et services généraux; F. Eder, Délégué aux Relations avec les Etats hôtes; S. Donnot, Sous-préfet de Gex; L. Touvet, Préfet de l'Ain; E. Sches, Sous-préfète de Nantua; E.Gröniger-Voss, Conseiller juridique du CERN; R. Heuer, Directeur général; F. Bordry, Chef du Département Technologie et P. Bloch, Chef du Département Physique.

Weighted inequalities for fractional integral operators and linear commutators in the Morrey-type spaces

Directory of Open Access Journals (Sweden)

Hua Wang

2017-01-01

Full Text Available Abstract In this paper, we first introduce some new Morrey-type spaces containing generalized Morrey space and weighted Morrey space with two weights as special cases. Then we give the weighted strong type and weak type estimates for fractional integral operators I α $I_{\\alpha}$ in these new Morrey-type spaces. Furthermore, the weighted strong type estimate and endpoint estimate of linear commutators [ b , I α ] $[b,I_{\\alpha}]$ formed by b and I α $I_{\\alpha}$ are established. Also we study related problems about two-weight, weak type inequalities for I α $I_{\\alpha}$ and [ b , I α ] $[b,I_{\\alpha}]$ in the Morrey-type spaces and give partial results.

Feedback Systems for Linear Colliders

International Nuclear Information System (INIS)

1999-01-01

Feedback systems are essential for stable operation of a linear collider, providing a cost-effective method for relaxing tight tolerances. In the Stanford Linear Collider (SLC), feedback controls beam parameters such as trajectory, energy, and intensity throughout the accelerator. A novel dithering optimization system which adjusts final focus parameters to maximize luminosity contributed to achieving record performance in the 1997-98 run. Performance limitations of the steering feedback have been investigated, and improvements have been made. For the Next Linear Collider (NLC), extensive feedback systems are planned as an integral part of the design. Feedback requirements for JLC (the Japanese Linear Collider) are essentially identical to NLC; some of the TESLA requirements are similar but there are significant differences. For NLC, algorithms which incorporate improvements upon the SLC implementation are being prototyped. Specialized systems for the damping rings, rf and interaction point will operate at high bandwidth and fast response. To correct for the motion of individual bunches within a train, both feedforward and feedback systems are planned. SLC experience has shown that feedback systems are an invaluable operational tool for decoupling systems, allowing precision tuning, and providing pulse-to-pulse diagnostics. Feedback systems for the NLC will incorporate the key SLC features and the benefits of advancing technologies

Some Schrödinger-type inequalities for stabilization of discrete linear systems associated with the stationary Schrödinger operator

Directory of Open Access Journals (Sweden)

Zongcai Jiang

2016-10-01

Full Text Available Abstract By applying some Schrödinger-type inequalities developed by Huang (Int. J. Math. 27(2:1650009, 2016, we are concerned with stabilization of discrete linear systems associated with the Schrödinger operator. Our first aim is to prove a state-dependent switching law associated with the Schrödinger operator, which is based on a convex combination. Next, we derive sufficient conditions associated with the Schrödinger operator that guarantee the uniform exponential stability of the system. Finally, we propose a necessary and sufficient condition for the stability of a system with two Schrödinger subsystems.

Aging analysis of high performance FinFET flip-flop under Dynamic NBTI simulation configuration

Science.gov (United States)

Zainudin, M. F.; Hussin, H.; Halim, A. K.; Karim, J.

2018-03-01

A mechanism known as Negative-bias Temperature Instability (NBTI) degrades a main electrical parameters of a circuit especially in terms of performance. So far, the circuit design available at present are only focussed on high performance circuit without considering the circuit reliability and robustness. In this paper, the main circuit performances of high performance FinFET flip-flop such as delay time, and power were studied with the presence of the NBTI degradation. The aging analysis was verified using a 16nm High Performance Predictive Technology Model (PTM) based on different commands available at Synopsys HSPICE. The results shown that the circuit under the longer dynamic NBTI simulation produces the highest impact in the increasing of gate delay and decrease in the average power reduction from a fresh simulation until the aged stress time under a nominal condition. In addition, the circuit performance under a varied stress condition such as temperature and negative stress gate bias were also studied.

Controllability analysis of decentralised linear controllers for polymeric fuel cells

Energy Technology Data Exchange (ETDEWEB)

Serra, Maria; Aguado, Joaquin; Ansede, Xavier; Riera, Jordi [Institut de Robotica i Informatica Industrial, Universitat Politecnica de Catalunya - Consejo Superior de Investigaciones Cientificas, C. Llorens i Artigas 4, 08028 Barcelona (Spain)

2005-10-10

This work deals with the control of polymeric fuel cells. It includes a linear analysis of the system at different operating points, the comparison and selection of different control structures, and the validation of the controlled system by simulation. The work is based on a complex non linear model which has been linearised at several operating points. The linear analysis tools used are the Morari resiliency index, the condition number, and the relative gain array. These techniques are employed to compare the controllability of the system with different control structures and at different operating conditions. According to the results, the most promising control structures are selected and their performance with PI based diagonal controllers is evaluated through simulations with the complete non linear model. The range of operability of the examined control structures is compared. Conclusions indicate good performance of several diagonal linear controllers. However, very few have a wide operability range. (author)

Dependence of the fundamental time eigenvalue of linear transport operator on the system size and other parameters - An application of the Perron-Frobenius theorem

International Nuclear Information System (INIS)

Sahni, D.C.

1991-01-01

Many papers have been devoted to the study of the spectral properties of the linear (neutron) transport equation. Most of the theoretical investigations have concentrated on the existence (or otherwise) of a continuous spectrum, point spectrum, a leading/dominant eigenvalue, and a corresponding positive eigenvector. It is shown that the fundamental time eigenvalue of the linear transport operator increases with the size of the system. This follows from the increase in the largest eigenvalue of a non-negative irreducible matrix whenever any matrix element his increased. This result of matrix analysis is generalized to more general Krein-Rutman operators that leave a cone of vectors invariant

UV/O 3 Generated Graphene Nanomesh: Formation Mechanism, Properties, and FET Studies

KAUST Repository

Yang, Da-Peng; Wang, Xiansong; Guo, Xiaojun; Zhi, Xiao; Wang, Kan; Li, Chao; Huang, Gaoshan; Shen, Guangxia; Mei, Yongfeng; Cui, Daxiang

2014-01-01

The bandgap engineering of graphene is a challenging task for its potential application. Forming unique structures such as nanoribbons or nanomeshes is an effective way to open up a bandgap in graphene. In this work, a graphene nanomesh (GNM) was prepared through UV-mediated oxidation of a graphene oxide (GO) film at atmosphere. Atomic force microscopy (AFM) was used to track the evolution of the surface morphology of GO during the irradiation. It was observed that a nanoporous network structure was progressively produced in the basal plane, which can be attributed to the fact that highly reactive oxygen species preferentially attack sp3 carbon-rich regions of the GO. In particular, the as-prepared GNM shows interesting semiconducting characteristics and photoluminescence (PL) phenomenon, which make it become a promising candidate for the use of electronics, optoelectronics, and biomedical engineering. Finally, the field-effect transistors (FETs) were fabricated using the as-prepared GNM as the active channel. The measured electrical characteristics indicate that the use of UV/O3 is an available choice to open the bandgap of graphene and tune its properties for optoelectronics or biomedical applications. © 2013 American Chemical Society.

UV/O 3 Generated Graphene Nanomesh: Formation Mechanism, Properties, and FET Studies

KAUST Repository

Yang, Da-Peng

2014-01-09

The bandgap engineering of graphene is a challenging task for its potential application. Forming unique structures such as nanoribbons or nanomeshes is an effective way to open up a bandgap in graphene. In this work, a graphene nanomesh (GNM) was prepared through UV-mediated oxidation of a graphene oxide (GO) film at atmosphere. Atomic force microscopy (AFM) was used to track the evolution of the surface morphology of GO during the irradiation. It was observed that a nanoporous network structure was progressively produced in the basal plane, which can be attributed to the fact that highly reactive oxygen species preferentially attack sp3 carbon-rich regions of the GO. In particular, the as-prepared GNM shows interesting semiconducting characteristics and photoluminescence (PL) phenomenon, which make it become a promising candidate for the use of electronics, optoelectronics, and biomedical engineering. Finally, the field-effect transistors (FETs) were fabricated using the as-prepared GNM as the active channel. The measured electrical characteristics indicate that the use of UV/O3 is an available choice to open the bandgap of graphene and tune its properties for optoelectronics or biomedical applications. © 2013 American Chemical Society.

Fiber optics frequency comb enabled linear optical sampling with operation wavelength range extension.

Science.gov (United States)

Liao, Ruolin; Wu, Zhichao; Fu, Songnian; Zhu, Shengnan; Yu, Zhe; Tang, Ming; Liu, Deming

2018-02-01

Although the linear optical sampling (LOS) technique is powerful enough to characterize various advanced modulation formats with high symbol rates, the central wavelength of a pulsed local oscillator (LO) needs to be carefully set according to that of the signal under test, due to the coherent mixing operation. Here, we experimentally demonstrate wideband LOS enabled by a fiber optics frequency comb (FOFC). Meanwhile, when the broadband FOFC acts as the pulsed LO, we propose a scheme to mitigate the enhanced sampling error arising in the non-ideal response of a balanced photodetector. Finally, precise characterizations of arbitrary 128 Gbps PDM-QPSK wavelength channels from 1550 to 1570 nm are successfully achieved, when a 101.3 MHz frequency spaced comb with a 3 dB spectral power ripple of 20 nm is used.

Ultra-high density out-of-plane strain sensor 3D architecture based on sub-20 nm PMOS FinFET

KAUST Repository

Ghoneim, Mohamed T.; Alfaraj, Nasir; Sevilla, Galo T.; Hussain, Muhammad Mustafa

2016-01-01

Future wearable electronics require not only flexibility but also preservation of the perks associated with today's high-performance, traditional silicon electronics. In this work we demonstrate a state-of-the-art fin-shaped field-effect transistor (FinFET)-based, out-of-plane strain sensor on flexible silicon through transforming the bulk device in a transfer-less process. The device preserves the functionality and high performance associated with its bulk, inflexible state. Furthermore, gate leakage current shows sufficient dependence on the value of the applied out-of-plane strain that enables permits use of the flexible device as a switching device as well as a strain sensor.

Ultra-high density out-of-plane strain sensor 3D architecture based on sub-20 nm PMOS FinFET

KAUST Repository

Ghoneim, Mohamed T.

2016-02-03

Future wearable electronics require not only flexibility but also preservation of the perks associated with today\\'s high-performance, traditional silicon electronics. In this work we demonstrate a state-of-the-art fin-shaped field-effect transistor (FinFET)-based, out-of-plane strain sensor on flexible silicon through transforming the bulk device in a transfer-less process. The device preserves the functionality and high performance associated with its bulk, inflexible state. Furthermore, gate leakage current shows sufficient dependence on the value of the applied out-of-plane strain that enables permits use of the flexible device as a switching device as well as a strain sensor.

Algebraic Theory of Linear Viscoelastic Nematodynamics

International Nuclear Information System (INIS)

Leonov, Arkady I.

2008-01-01

This paper consists of two parts. The first one develops algebraic theory of linear anisotropic nematic 'N-operators' build up on the additive group of traceless second rank 3D tensors. These operators have been implicitly used in continual theories of nematic liquid crystals and weakly elastic nematic elastomers. It is shown that there exists a non-commutative, multiplicative group N 6 of N-operators build up on a manifold in 6D space of parameters. Positive N-operators, which in physical applications hold thermodynamic stability constraints, do not generally form a subgroup of group N 6 . A three-parametric, commutative transversal-isotropic subgroup S 3 subset of N 6 of positive symmetric nematic operators is also briefly discussed. The special case of singular, non-negative symmetric N-operators reveals the algebraic structure of nematic soft deformation modes. The second part of the paper develops a theory of linear viscoelastic nematodynamics applicable to liquid crystalline polymer. The viscous and elastic nematic components in theory are described by using the Leslie-Ericksen-Parodi (LEP) approach for viscous nematics and de Gennes free energy for weakly elastic nematic elastomers. The case of applied external magnetic field exemplifies the occurrence of non-symmetric stresses. In spite of multi-(10) parametric character of the theory, the use of nematic operators presents it in a transparent form. When the magnetic field is absent, the theory is simplified for symmetric case with six parameters, and takes an extremely simple, two-parametric form for viscoelastic nematodynamics with possible soft deformation modes. It is shown that the linear nematodynamics is always reducible to the LEP-like equations where the coefficients are changed for linear memory functionals whose parameters are calculated from original viscosities and moduli

Superconducting linear accelerator cryostat

International Nuclear Information System (INIS)

Ben-Zvi, I.; Elkonin, B.V.; Sokolowski, J.S.

1984-01-01

A large vertical cryostat for a superconducting linear accelerator using quarter wave resonators has been developed. The essential technical details, operational experience and performance are described. (author)

A new linearized equation for servo valve in hydraulic control systems

International Nuclear Information System (INIS)

Kim, Tae Hyung; Lee, Ill Yeong

2002-01-01

In the procedure of the hydraulic control system analysis, a linearized approximate equation described by the first order term of Taylor's series has been widely used. Such a linearized equation is effective just near the operating point. And, as of now, there are no general standards on how to determine the operating point of a servo valve in the process of applying the linearized equation. So, in this study, a new linearized equation for valve characteristics is proposed as a modified form of the existing linearized equation. And, a method for selecting an optimal operating point is proposed for the new linearized equation. The effectiveness of the new linearized equation is confirmed through numerical simulations and experiments for a model hydraulic control system

Comparing the performance of expert user heuristics and an integer linear program in aircraft carrier deck operations.

Science.gov (United States)

Ryan, Jason C; Banerjee, Ashis Gopal; Cummings, Mary L; Roy, Nicholas

2014-06-01

Planning operations across a number of domains can be considered as resource allocation problems with timing constraints. An unexplored instance of such a problem domain is the aircraft carrier flight deck, where, in current operations, replanning is done without the aid of any computerized decision support. Rather, veteran operators employ a set of experience-based heuristics to quickly generate new operating schedules. These expert user heuristics are neither codified nor evaluated by the United States Navy; they have grown solely from the convergent experiences of supervisory staff. As unmanned aerial vehicles (UAVs) are introduced in the aircraft carrier domain, these heuristics may require alterations due to differing capabilities. The inclusion of UAVs also allows for new opportunities for on-line planning and control, providing an alternative to the current heuristic-based replanning methodology. To investigate these issues formally, we have developed a decision support system for flight deck operations that utilizes a conventional integer linear program-based planning algorithm. In this system, a human operator sets both the goals and constraints for the algorithm, which then returns a proposed schedule for operator approval. As a part of validating this system, the performance of this collaborative human-automation planner was compared with that of the expert user heuristics over a set of test scenarios. The resulting analysis shows that human heuristics often outperform the plans produced by an optimization algorithm, but are also often more conservative.

Linear collider: a preview

Energy Technology Data Exchange (ETDEWEB)

Wiedemann, H.

1981-11-01

Since no linear colliders have been built yet it is difficult to know at what energy the linear cost scaling of linear colliders drops below the quadratic scaling of storage rings. There is, however, no doubt that a linear collider facility for a center of mass energy above say 500 GeV is significantly cheaper than an equivalent storage ring. In order to make the linear collider principle feasible at very high energies a number of problems have to be solved. There are two kinds of problems: one which is related to the feasibility of the principle and the other kind of problems is associated with minimizing the cost of constructing and operating such a facility. This lecture series describes the problems and possible solutions. Since the real test of a principle requires the construction of a prototype I will in the last chapter describe the SLC project at the Stanford Linear Accelerator Center.

Linear collider: a preview

International Nuclear Information System (INIS)

Wiedemann, H.

1981-11-01

Since no linear colliders have been built yet it is difficult to know at what energy the linear cost scaling of linear colliders drops below the quadratic scaling of storage rings. There is, however, no doubt that a linear collider facility for a center of mass energy above say 500 GeV is significantly cheaper than an equivalent storage ring. In order to make the linear collider principle feasible at very high energies a number of problems have to be solved. There are two kinds of problems: one which is related to the feasibility of the principle and the other kind of problems is associated with minimizing the cost of constructing and operating such a facility. This lecture series describes the problems and possible solutions. Since the real test of a principle requires the construction of a prototype I will in the last chapter describe the SLC project at the Stanford Linear Accelerator Center

Commercially developed mixed-signal CMOS process features for application in advanced ROICs in 0.18μm technology node

Science.gov (United States)

Kar-Roy, Arjun; Hurwitz, Paul; Mann, Richard; Qamar, Yasir; Chaudhry, Samir; Zwingman, Robert; Howard, David; Racanelli, Marco

2012-06-01

Increasingly complex specifications for next-generation focal plane arrays (FPAs) require smaller pixels, larger array sizes, reduced power consumption and lower cost. We have previously reported on the favorable features available in the commercially available TowerJazz CA18 0.18μm mixed-signal CMOS technology platform for advanced read-out integrated circuit (ROIC) applications. In his paper, new devices in development for commercial purposes and which may have applications in advanced ROICs are reported. First, results of buried-channel 3.3V field effect transistors (FETs) are detailed. The buried-channel pFETs show flicker (1/f) noise reductions of ~5X in comparison to surface-channel pFETs along with a significant reduction of the body constant parameter. The buried-channel nFETs show ~2X reduction of 1/f noise versus surface-channel nFETs. Additional reduced threshold voltage nFETs and pFETs are also described. Second, a high-density capacitor solution with a four-stacked linear (metal-insulator-metal) MIM capacitor having capacitance density of 8fF/μm2 is reported. Additional stacking with MOS capacitor in a 5V tolerant process results in >50fC/μm2 charge density. Finally, one-time programmable (OTP) and multi-time programmable (MTP) non-volatile memory options in the CA18 technology platform are outlined.

Linear Programming and Network Flows

CERN Document Server

Bazaraa, Mokhtar S; Sherali, Hanif D

2011-01-01

The authoritative guide to modeling and solving complex problems with linear programming-extensively revised, expanded, and updated The only book to treat both linear programming techniques and network flows under one cover, Linear Programming and Network Flows, Fourth Edition has been completely updated with the latest developments on the topic. This new edition continues to successfully emphasize modeling concepts, the design and analysis of algorithms, and implementation strategies for problems in a variety of fields, including industrial engineering, management science, operations research

Linear induction motor

International Nuclear Information System (INIS)

Barkman, W.E.; Adams, W.Q.; Berrier, B.R.

1978-01-01

A linear induction motor has been operated on a test bed with a feedback pulse resolution of 5 nm (0.2 μin). Slewing tests with this slide drive have shown positioning errors less than or equal to 33 nm (1.3 μin) at feedrates between 0 and 25.4 mm/min (0-1 ipm). A 0.86-m (34-in)-stroke linear motor is being investigated, using the SPACO machine as a test bed. Initial results were encouraging, and work is continuing to optimize the servosystem compensation

Coherent Synchrotron Radiation A Simulation Code Based on the Non-Linear Extension of the Operator Splitting Method

CERN Document Server

Dattoli, Giuseppe

2005-01-01

The coherent synchrotron radiation (CSR) is one of the main problems limiting the performance of high intensity electron accelerators. A code devoted to the analysis of this type of problems should be fast and reliable: conditions that are usually hardly achieved at the same time. In the past, codes based on Lie algebraic techniques have been very efficient to treat transport problem in accelerators. The extension of these method to the non-linear case is ideally suited to treat CSR instability problems. We report on the development of a numerical code, based on the solution of the Vlasov equation, with the inclusion of non-linear contribution due to wake field effects. The proposed solution method exploits an algebraic technique, using exponential operators implemented numerically in C++. We show that the integration procedure is capable of reproducing the onset of an instability and effects associated with bunching mechanisms leading to the growth of the instability itself. In addition, parametric studies a...

Low-sensitivity H ∞ filter design for linear delta operator systems with sampling time jitter

Science.gov (United States)

Guo, Xiang-Gui; Yang, Guang-Hong

2012-04-01

This article is concerned with the problem of designing H ∞ filters for a class of linear discrete-time systems with low-sensitivity to sampling time jitter via delta operator approach. Delta-domain model is used to avoid the inherent numerical ill-condition resulting from the use of the standard shift-domain model at high sampling rates. Based on projection lemma in combination with the descriptor system approach often used to solve problems related to delay, a novel bounded real lemma with three slack variables for delta operator systems is presented. A sensitivity approach based on this novel lemma is proposed to mitigate the effects of sampling time jitter on system performance. Then, the problem of designing a low-sensitivity filter can be reduced to a convex optimisation problem. An important consideration in the design of correlation filters is the optimal trade-off between the standard H ∞ criterion and the sensitivity of the transfer function with respect to sampling time jitter. Finally, a numerical example demonstrating the validity of the proposed design method is given.

Comparison of five cluster validity indices performance in brain [18 F]FET-PET image segmentation using k-means.

Science.gov (United States)

Abualhaj, Bedor; Weng, Guoyang; Ong, Melissa; Attarwala, Ali Asgar; Molina, Flavia; Büsing, Karen; Glatting, Gerhard

2017-01-01

Dynamic [ 18 F]fluoro-ethyl-L-tyrosine positron emission tomography ([ 18 F]FET-PET) is used to identify tumor lesions for radiotherapy treatment planning, to differentiate glioma recurrence from radiation necrosis and to classify gliomas grading. To segment different regions in the brain k-means cluster analysis can be used. The main disadvantage of k-means is that the number of clusters must be pre-defined. In this study, we therefore compared different cluster validity indices for automated and reproducible determination of the optimal number of clusters based on the dynamic PET data. The k-means algorithm was applied to dynamic [ 18 F]FET-PET images of 8 patients. Akaike information criterion (AIC), WB, I, modified Dunn's and Silhouette indices were compared on their ability to determine the optimal number of clusters based on requirements for an adequate cluster validity index. To check the reproducibility of k-means, the coefficients of variation CVs of the objective function values OFVs (sum of squared Euclidean distances within each cluster) were calculated using 100 random centroid initialization replications RCI 100 for 2 to 50 clusters. k-means was performed independently on three neighboring slices containing tumor for each patient to investigate the stability of the optimal number of clusters within them. To check the independence of the validity indices on the number of voxels, cluster analysis was applied after duplication of a slice selected from each patient. CVs of index values were calculated at the optimal number of clusters using RCI 100 to investigate the reproducibility of the validity indices. To check if the indices have a single extremum, visual inspection was performed on the replication with minimum OFV from RCI 100 . The maximum CV of OFVs was 2.7 × 10 -2 from all patients. The optimal number of clusters given by modified Dunn's and Silhouette indices was 2 or 3 leading to a very poor segmentation. WB and I indices suggested in

Non-linear wave packet dynamics of coherent states

Indian Academy of Sciences (India)

In recent years, the non-linear quantum dynamics of these states have revealed some striking features. It was found that under the action of a Hamil- tonian which is a non-linear function of the photon operator(s) only, an initial coherent state loses its coherent structure quickly due to quantum dephasing induced by the non-.

The dependency of different stress-level SiN capping films and the optimization of D-SMT process for the device performance booster in Ge n-FinFETs

Energy Technology Data Exchange (ETDEWEB)

Liao, M.-H., E-mail: mhliaoa@ntu.edu.tw; Chen, P.-G. [Department of Mechanical Engineering, National Taiwan University, Taipei 10617, Taiwan (China)

2015-08-17

The capping stressed SiN film is one of the most important process steps for the dislocation stress memorization technique (D-SMT), which has been used widely in the current industry, for the electron mobility booster in the n-type transistor beyond the 32/28 nm technology node. In this work, we found that the different stress-level SiN capping films influence the crystal re-growth velocities along different directions including [100] and [110] directions in Ge a lot. It can be further used to optimize the dislocation angle in the transistor during the D-SMT process and then results in the largest channel stress distribution to boost the device performance in the Ge n-FinFETs. Based on the theoretical calculation and experimental demonstration, it shows that the Ge three dimensional (3D) n-FinFETs device performance is improved ∼55% with the usage of +3 GPa tensile stressed SiN capping film. The channel stress and dislocation angle is ∼2.5 GPa and 30°, measured by the atomic force microscope-Raman technique and transmission electron microscopy, respectively.

Parametric Linear Dynamic Logic

Directory of Open Access Journals (Sweden)

Peter Faymonville

2014-08-01

Full Text Available We introduce Parametric Linear Dynamic Logic (PLDL, which extends Linear Dynamic Logic (LDL by temporal operators equipped with parameters that bound their scope. LDL was proposed as an extension of Linear Temporal Logic (LTL that is able to express all ω-regular specifications while still maintaining many of LTL's desirable properties like an intuitive syntax and a translation into non-deterministic Büchi automata of exponential size. But LDL lacks capabilities to express timing constraints. By adding parameterized operators to LDL, we obtain a logic that is able to express all ω-regular properties and that subsumes parameterized extensions of LTL like Parametric LTL and PROMPT-LTL. Our main technical contribution is a translation of PLDL formulas into non-deterministic Büchi word automata of exponential size via alternating automata. This yields a PSPACE model checking algorithm and a realizability algorithm with doubly-exponential running time. Furthermore, we give tight upper and lower bounds on optimal parameter values for both problems. These results show that PLDL model checking and realizability are not harder than LTL model checking and realizability.

Field-effect transistors as electrically controllable nonlinear rectifiers for the characterization of terahertz pulses

Science.gov (United States)

Lisauskas, Alvydas; Ikamas, Kestutis; Massabeau, Sylvain; Bauer, Maris; ČibiraitÄ--, DovilÄ--; Matukas, Jonas; Mangeney, Juliette; Mittendorff, Martin; Winnerl, Stephan; Krozer, Viktor; Roskos, Hartmut G.

2018-05-01

We propose to exploit rectification in field-effect transistors as an electrically controllable higher-order nonlinear phenomenon for the convenient monitoring of the temporal characteristics of THz pulses, for example, by autocorrelation measurements. This option arises because of the existence of a gate-bias-controlled super-linear response at sub-threshold operation conditions when the devices are subjected to THz radiation. We present measurements for different antenna-coupled transistor-based THz detectors (TeraFETs) employing (i) AlGaN/GaN high-electron-mobility and (ii) silicon CMOS field-effect transistors and show that the super-linear behavior in the sub-threshold bias regime is a universal phenomenon to be expected if the amplitude of the high-frequency voltage oscillations exceeds the thermal voltage. The effect is also employed as a tool for the direct determination of the speed of the intrinsic TeraFET response which allows us to avoid limitations set by the read-out circuitry. In particular, we show that the build-up time of the intrinsic rectification signal of a patch-antenna-coupled CMOS detector changes from 20 ps in the deep sub-threshold voltage regime to below 12 ps in the vicinity of the threshold voltage.

Attofarad resolution capacitance-voltage measurement of nanometer scale field effect transistors utilizing ambient noise

International Nuclear Information System (INIS)

Gokirmak, Ali; Inaltekin, Hazer; Tiwari, Sandip

2009-01-01

A high resolution capacitance-voltage (C-V) characterization technique, enabling direct measurement of electronic properties at the nanoscale in devices such as nanowire field effect transistors (FETs) through the use of random fluctuations, is described. The minimum noise level required for achieving sub-aF (10 -18 F) resolution, the leveraging of stochastic resonance, and the effect of higher levels of noise are illustrated through simulations. The non-linear ΔC gate-source/drain -V gate response of FETs is utilized to determine the inversion layer capacitance (C inv ) and carrier mobility. The technique is demonstrated by extracting the carrier concentration and effective electron mobility in a nanoscale Si FET with C inv = 60 aF.

Charge Splitting In Situ Recorder (CSIR) for Real-Time Examination of Plasma Charging Effect in FinFET BEOL Processes

Science.gov (United States)

Tsai, Yi-Pei; Hsieh, Ting-Huan; Lin, Chrong Jung; King, Ya-Chin

2017-09-01

A novel device for monitoring plasma-induced damage in the back-end-of-line (BEOL) process with charge splitting capability is first-time proposed and demonstrated. This novel charge splitting in situ recorder (CSIR) can independently trace the amount and polarity of plasma charging effects during the manufacturing process of advanced fin field-effect transistor (FinFET) circuits. Not only does it reveal the real-time and in situ plasma charging levels on the antennas, but it also separates positive and negative charging effect and provides two independent readings. As CMOS technologies push for finer metal lines in the future, the new charge separation scheme provides a powerful tool for BEOL process optimization and further device reliability improvements.

Effect of Ion Flux (Dose Rate) in Source-Drain Extension Ion Implantation for 10-nm Node FinFET and Beyond on 300/450mm Platforms

Science.gov (United States)

Shen, Ming-Yi

The improvement of wafer equipment productivity has been a continuous effort of the semiconductor industry. Higher productivity implies lower product price, which economically drives more demand from the market. This is desired by the semiconductor manufacturing industry. By raising the ion beam current of the ion implanter for 300/450mm platforms, it is possible to increase the throughput of the ion implanter. The resulting dose rate can be comparable to the performance of conventional ion implanters or higher, depending on beam current and beam size. Thus, effects caused by higher dose rate must be investigated further. One of the major applications of ion implantation (I/I) is source-drain extension (SDE) I/I for the silicon FinFET device. This study investigated the dose rate effects on the material properties and device performance of the 10-nm node silicon FinFET. In order to gain better understanding of the dose rate effects, the dose rate study is based on Synopsys Technology CAD (TCAD) process and device simulations that are calibrated and validated using available structural silicon fin samples. We have successfully shown that the kinetic monte carlo (KMC) I/I simulation can precisely model both the silicon amorphization and the arsenic distribution in the fin by comparing the KMC simulation results with TEM images. The results of the KMC I/I simulation show that at high dose rate more activated arsenic dopants were in the source-drain extension (SDE) region. This finding matches with the increased silicon amorphization caused by the high dose-rate I/I, given that the arsenic atoms could be more easily activated by the solid phase epitaxial regrowth process. This increased silicon amorphization led to not only higher arsenic activation near the spacer edge, but also less arsenic atoms straggling into the channel. Hence, it is possible to improve the throughput of the ion implanter when the dopants are implanted at high dose rate if the same doping level

Linear mass reflectron

International Nuclear Information System (INIS)

Mamyrin, B.A.; Shmikk, D.V.

1979-01-01

A description and operating principle of a linear mass reflectron with V-form trajectory of ion motion -a new non-magnetic time-of-flight mass spectrometer with high resolution are presented. The ion-optical system of the device consists of an ion source with ionization by electron shock, of accelerating gaps, reflector gaps, a drift space and ion detector. Ions move in the linear mass refraction along the trajectories parallel to the axis of the analyzer chamber. The results of investigations into the experimental device are given. With an ion drift length of 0.6 m the device resolution is 1200 with respect to the peak width at half-height. Small-sized mass spectrometric transducers with high resolution and sensitivity may be designed on the base of the linear mass reflectron principle

Laser based beam diagnostic for the RAL Front End Test Stand (FETS)

International Nuclear Information System (INIS)

Gabor, C.; Lee, D. A.; Pozimski, J. K.; Letchford, A.

2007-01-01

For the diagnostic of high power particle beams, non-destructive measurement devices provide minimum influence on the beam and avoid various problems in connection with the high power density on surfaces. An H- ion beam offers the opportunity of non destructive beam diagnostics based on the effect of photo detachment. By the interaction of light with H- ions, the additional electron can be detached and a small number of neutrals will be produced. An additional magnetic dipole field can then be used to separate the detached electrons and neutrals from the ions. Using an integral detector the spatial distribution of the beam ion density can be derived, while the use of a spatial resolving detector enables to determine the phase space distribution. To investigate the measurement principle of the latter, a test stand was set up at the IAP in Frankfurt. This system will now be adopted to the requirements of the Front End Test Stand at CCLRC/ RAL. The aim of this FETS is to demonstrate a chopped H- beam of 60mA at 3MeV and 50pps with sufficiently high beam quality. The paper will present a detailed description of the proposed set up at RAL and discuss several results of simulations and experimental data gained in Frankfurt

Linear algebra done right

CERN Document Server

Axler, Sheldon

2015-01-01

This best-selling textbook for a second course in linear algebra is aimed at undergrad math majors and graduate students. The novel approach taken here banishes determinants to the end of the book. The text focuses on the central goal of linear algebra: understanding the structure of linear operators on finite-dimensional vector spaces. The author has taken unusual care to motivate concepts and to simplify proofs. A variety of interesting exercises in each chapter helps students understand and manipulate the objects of linear algebra. The third edition contains major improvements and revisions throughout the book. More than 300 new exercises have been added since the previous edition. Many new examples have been added to illustrate the key ideas of linear algebra. New topics covered in the book include product spaces, quotient spaces, and dual spaces. Beautiful new formatting creates pages with an unusually pleasant appearance in both print and electronic versions. No prerequisites are assumed other than the ...

The Cauchy problem for non-linear Klein-Gordon equations

International Nuclear Information System (INIS)

Simon, J.C.H.; Taflin, E.

1993-01-01

We consider in R n+1 , n≥2, the non-linear Klein-Gordon equation. We prove for such an equation that there is neighbourhood of zero in a Hilbert space of initial conditions for which the Cauchy problem has global solutions and on which there is asymptotic completeness. The inverse of the wave operator linearizes the non-linear equation. If, moreover, the equation is manifestly Poincare covariant then the non-linear representation of the Poincare-Lie algebra, associated with the non-linear Klein-Gordon equation is integrated to a non-linear representation of the Poincare group on an invariant neighbourhood of zero in the Hilbert space. This representation is linearized by the inverse of the wave operator. The Hilbert space is, in both cases, the closure of the space of the differentiable vectors for the linear representation of the Poincare group, associated with the Klein-Gordon equation, with respect to a norm defined by the representation of the enveloping algebra. (orig.)

Low-voltage organic field-effect transistors based on novel high-κ organometallic lanthanide complex for gate insulating materials

Directory of Open Access Journals (Sweden)

Qi Liu

2014-08-01

Full Text Available A novel high-κ organometallic lanthanide complex, Eu(tta3L (tta=2-thenoyltrifluoroacetonate, L = 4,5-pinene bipyridine, is used as gate insulating material to fabricate low-voltage pentacene field-effect transistors (FETs. The optimized gate insulator exhibits the excellent properties such as low leakage current density, low surface roughness, and high dielectric constant. When operated under a low voltage of −5 V, the pentacene FET devices show the attractive electrical performance, e.g. carrier mobility (μFET of 0.17 cm2 V−1 s−1, threshold voltage (Vth of −0.9 V, on/off current ratio of 5 × 103, and subthreshold slope (SS of 1.0 V dec−1, which is much better than that of devices obtained on conventional 300 nm SiO2 substrate (0.13 cm2 V−1 s−1, −7.3 V and 3.1 V dec−1 for μFET, Vth and SS value when operated at −30 V. These results indicate that this kind of high-κ organometallic lanthanide complex becomes a promising candidate as gate insulator for low-voltage organic FETs.

Operation of LIA-30 linear induction accelerator in the mode of generation of two bremsstrahlung pulses

Energy Technology Data Exchange (ETDEWEB)

Bossamykin, V S; Gerasimov, A I; Gordeev, V S; Grishin, A V; Gritsina, V P; Tarasov, A D; Fedotkin, A S; Lazarev, S A; Averchenkov, A Ya [All-Russian Scientific Research Institute of Experimental Physics, Sarov (Russian Federation)

1997-12-31

The operating mode was studied of the LIA-30 linear induction accelerator ({approx} 40 MeV, {approx} 100 kA, {approx} 30 ns) with the generation of two bremsstrahlung pulses separated by a specified time interval from 0 to 5 {mu}s. In the accelerating channel an additional tube cathode was installed, and a synchronization system for two accelerating module groups triggering the formation and acceleration, at different initial times, of two annular electron beams with different outer diameters was changed. The energy limit of each beam electron acceleration can be controlled, and the energy sum limit is {<=} 540 MeV. (author). 2 tabs., 2 figs.

About APPLE II Operation

International Nuclear Information System (INIS)

Schmidt, T.; Zimoch, D.

2007-01-01

The operation of an APPLE II based undulator beamline with all its polarization states (linear horizontal and vertical, circular and elliptical, and continous variation of the linear vector) requires an effective description allowing an automated calculation of gap and shift parameter as function of energy and operation mode. The extension of the linear polarization range from 0 to 180 deg. requires 4 shiftable magnet arrrays, permitting use of the APU (adjustable phase undulator) concept. Studies for a pure fixed gap APPLE II for the SLS revealed surprising symmetries between circular and linear polarization modes allowing for simplified operation. A semi-analytical model covering all types of APPLE II and its implementation will be presented

Relation of deformed nonlinear algebras with linear ones

International Nuclear Information System (INIS)

Nowicki, A; Tkachuk, V M

2014-01-01

The relation between nonlinear algebras and linear ones is established. For a one-dimensional nonlinear deformed Heisenberg algebra with two operators we find the function of deformation for which this nonlinear algebra can be transformed to a linear one with three operators. We also establish the relation between the Lie algebra of total angular momentum and corresponding nonlinear one. This relation gives a possibility to simplify and to solve the eigenvalue problem for the Hamiltonian in a nonlinear case using the reduction of this problem to the case of linear algebra. It is demonstrated in an example of a harmonic oscillator. (paper)

Ada Linear-Algebra Program

Science.gov (United States)

Klumpp, A. R.; Lawson, C. L.

1988-01-01

Routines provided for common scalar, vector, matrix, and quaternion operations. Computer program extends Ada programming language to include linear-algebra capabilities similar to HAS/S programming language. Designed for such avionics applications as software for Space Station.

BLAS- BASIC LINEAR ALGEBRA SUBPROGRAMS

Science.gov (United States)

Krogh, F. T.

1994-01-01

The Basic Linear Algebra Subprogram (BLAS) library is a collection of FORTRAN callable routines for employing standard techniques in performing the basic operations of numerical linear algebra. The BLAS library was developed to provide a portable and efficient source of basic operations for designers of programs involving linear algebraic computations. The subprograms available in the library cover the operations of dot product, multiplication of a scalar and a vector, vector plus a scalar times a vector, Givens transformation, modified Givens transformation, copy, swap, Euclidean norm, sum of magnitudes, and location of the largest magnitude element. Since these subprograms are to be used in an ANSI FORTRAN context, the cases of single precision, double precision, and complex data are provided for. All of the subprograms have been thoroughly tested and produce consistent results even when transported from machine to machine. BLAS contains Assembler versions and FORTRAN test code for any of the following compilers: Lahey F77L, Microsoft FORTRAN, or IBM Professional FORTRAN. It requires the Microsoft Macro Assembler and a math co-processor. The PC implementation allows individual arrays of over 64K. The BLAS library was developed in 1979. The PC version was made available in 1986 and updated in 1988.

Parametrices and exact paralinearization of semi-linear boundary problems

DEFF Research Database (Denmark)

Johnsen, Jon

2008-01-01

The subject is parametrices for semi-linear problems, based on parametrices for linear boundary problems and on non-linearities that decompose into solution-dependent linear operators acting on the solutions. Non-linearities of product type are shown to admit this via exact paralinearization...... of homogeneous distributions, tensor products and halfspace extensions have been revised. Examples include the von Karman equation....

Operator-assisted planning and execution of proximity operations subject to operational constraints

Science.gov (United States)

Grunwald, Arthur J.; Ellis, Stephen R.

1991-01-01

Future multi-vehicle operations will involve multiple scenarios that will require a planning tool for the rapid, interactive creation of fuel-efficient trajectories. The planning process must deal with higher-order, non-linear processes involving dynamics that are often counter-intuitive. The optimization of resulting trajectories can be difficult to envision. An interaction proximity operations planning system is being developed to provide the operator with easily interpreted visual feedback of trajectories and constraints. This system is hosted on an IRIS 4D graphics platform and utilizes the Clohessy-Wiltshire equations. An inverse dynamics algorithm is used to remove non-linearities while the trajectory maneuvers are decoupled and separated in a geometric spreadsheet. The operator has direct control of the position and time of trajectory waypoints to achieve the desired end conditions. Graphics provide the operator with visualization of satisfying operational constraints such as structural clearance, plume impingement, approach velocity limits, and arrival or departure corridors. Primer vector theory is combined with graphical presentation to improve operator understanding of suggested automated system solutions and to allow the operator to review, edit, or provide corrective action to the trajectory plan.

Pulse-Driven Capacitive Lead Ion Detection with Reduced Graphene Oxide Field-Effect Transistor Integrated with an Analyzing Device for Rapid Water Quality Monitoring.

Science.gov (United States)

Maity, Arnab; Sui, Xiaoyu; Tarman, Chad R; Pu, Haihui; Chang, Jingbo; Zhou, Guihua; Ren, Ren; Mao, Shun; Chen, Junhong

2017-11-22

Rapid and real-time detection of heavy metals in water with a portable microsystem is a growing demand in the field of environmental monitoring, food safety, and future cyber-physical infrastructure. Here, we report a novel ultrasensitive pulse-driven capacitance-based lead ion sensor using self-assembled graphene oxide (GO) monolayer deposition strategy to recognize the heavy metal ions in water. The overall field-effect transistor (FET) structure consists of a thermally reduced graphene oxide (rGO) channel with a thin layer of Al 2 O 3 passivation as a top gate combined with sputtered gold nanoparticles that link with the glutathione (GSH) probe to attract Pb 2+ ions in water. Using a preprogrammed microcontroller, chemo-capacitance based detection of lead ions has been demonstrated with this FET sensor. With a rapid response (∼1-2 s) and negligible signal drift, a limit of detection (LOD) water stabilization followed by lead ion testing and calculation is much shorter than common FET resistance/current measurements (∼minutes) and other conventional methods, such as optical and inductively coupled plasma methods (∼hours). An approximate linear operational range (5-20 ppb) around 15 ppb (the maximum contaminant limit by US Environmental Protection Agency (EPA) for lead in drinking water) makes it especially suitable for drinking water quality monitoring. The validity of the pulse method is confirmed by quantifying Pb 2+ in various real water samples such as tap, lake, and river water with an accuracy ∼75%. This capacitance measurement strategy is promising and can be readily extended to various FET-based sensor devices for other targets.

Eigenvectors and fixed point of non-linear operators

Directory of Open Access Journals (Sweden)

Giulio Trombetta

2007-12-01

Full Text Available Let X be a real infinite-dimensional Banach space and ψ a measure of noncompactness on X. Let Ω be a bounded open subset of X and A : Ω → X a ψ-condensing operator, which has no fixed points on ∂Ω.Then the fixed point index, ind(A,Ω, of A on Ω is defined (see, for example, ([1] and [18]. In particular, if A is a compact operator ind(A,Ω agrees with the classical Leray-Schauder degree of I −A on Ω relative to the point 0, deg(I −A,Ω,0. The main aim of this note is to investigate boundary conditions, under which the fixed point index of strict- ψ-contractive or ψ-condensing operators A : Ω → X is equal to zero. Correspondingly, results on eigenvectors and nonzero fixed points of k-ψ-contractive and ψ-condensing operators are obtained. In particular we generalize the Birkhoff-Kellog theorem [4] and Guo’s domain compression and expansion theorem [17]. The note is based mainly on the results contained in [7] and [8].

Linear determining equations for differential constraints

International Nuclear Information System (INIS)

Kaptsov, O V

1998-01-01

A construction of differential constraints compatible with partial differential equations is considered. Certain linear determining equations with parameters are used to find such differential constraints. They generalize the classical determining equations used in the search for admissible Lie operators. As applications of this approach equations of an ideal incompressible fluid and non-linear heat equations are discussed

Parameterized Linear Longitudinal Airship Model

Science.gov (United States)

Kulczycki, Eric; Elfes, Alberto; Bayard, David; Quadrelli, Marco; Johnson, Joseph

2010-01-01

A parameterized linear mathematical model of the longitudinal dynamics of an airship is undergoing development. This model is intended to be used in designing control systems for future airships that would operate in the atmospheres of Earth and remote planets. Heretofore, the development of linearized models of the longitudinal dynamics of airships has been costly in that it has been necessary to perform extensive flight testing and to use system-identification techniques to construct models that fit the flight-test data. The present model is a generic one that can be relatively easily specialized to approximate the dynamics of specific airships at specific operating points, without need for further system identification, and with significantly less flight testing. The approach taken in the present development is to merge the linearized dynamical equations of an airship with techniques for estimation of aircraft stability derivatives, and to thereby make it possible to construct a linearized dynamical model of the longitudinal dynamics of a specific airship from geometric and aerodynamic data pertaining to that airship. (It is also planned to develop a model of the lateral dynamics by use of the same methods.) All of the aerodynamic data needed to construct the model of a specific airship can be obtained from wind-tunnel testing and computational fluid dynamics

On the applicability of the Natori formula to realistic multi-layer quantum well III-V FETs

Science.gov (United States)

Gili, A.; Xanthakis, J. P.

2017-10-01

We investigated the validity of the Natori formalism for realistic multi-layer quantum well FETs. We show that the assumption of a single layer (the channel) carrying all of the current density is far from reality in the sub-threshold region, where in fact most of the current density resides below the channel. Our analysis is based on comparing results of Natori calculations with experimental ones and on comparing with other first-principles calculations. If the Natori calculations are employed in the subthreshold region then a misleadingly small subthreshold slope would be obtained. We propose a way to remedy this inefficiency of this formulation so that it can be applicable to realistic many-layer devices. In particular we show that if the 1-dimensional quantum well of the Natori method enclosing the electron gas is expanded to include the supply layer-usually below the channel- and a proper ab initio potential is used to obtain its eigenvalues, then the Natori formula regains its validity.

Performance of the SLAC Linear Collider klystrons

International Nuclear Information System (INIS)

Allen, M.A.; Fowkes, W.R.; Koontz, R.F.; Schwarz, H.D.; Seeman, J.T.; Vlieks, A.E.

1987-01-01

There are now 200 new, high power 5045 klystrons installed on the two-mile Stanford Linear Accelerator. Peak power per klystron averages over 63 MW. Average energy contribution is above 240 MeV per station. Electron beam energy has been measured as high as 53 GeV. Energy instability due to kylstron malfunction is less than 0.2%. The installed klystrons have logged over one million operating hours with close to 20,00 klystron hours cumulative operating time between failures. Data is being accumulated on klystron operation and failure modes with failure signatures starting to become apparent. To date, no wholesale failure modes have surfaced that would impair the SLAC linear Collider (SLC) program

On the significance of the noise model for the performance of a linear MPC in closed-loop operation

DEFF Research Database (Denmark)

Hagdrup, Morten; Boiroux, Dimitri; Mahmoudi, Zeinab

2016-01-01

This paper discusses the significance of the noise model for the performance of a Model Predictive Controller when operating in closed-loop. The process model is parametrized as a continuous-time (CT) model and the relevant sampled-data filtering and control algorithms are developed. Using CT...... models typically means less parameters to identify. Systematic tuning of such controllers is discussed. Simulation studies are conducted for linear time-invariant systems showing that choosing a noise model of low order is beneficial for closed-loop performance. (C) 2016, IFAC (International Federation...

Status of the SLAC Linear Collider Project

International Nuclear Information System (INIS)

Stiening, R.

1983-01-01

The SLAC Linear Collider Project has two principal goals. The first is to serve as a prototype for a future very high energy linear electron-positron collider. The second is to quickly, at low cost, achieve sufficient luminosity at 100 GeV center-of-mass energy to explore the physics of the Z 0 . The first goal is important to the future of electron-positron physics because the rapid increase of synchrotron radiation with energy causes the cost of circular storage ring colliders to whereas the cost of linear colliders increases only in proportion to the center-of-mass energy. The second is important because the existance at SLAC of a linear accelerator which can be converted at low cost to collider operation makes possible a unique opportunity to quickly achieve 100 GeV center-of-mass collisions. At the design luminosity of 6.0 x 10 30 many thousands of Z 0 decays should be observed in each day of operation

Gate-first integration of tunable work function metal gates of different thicknesses into high-k metal gates CMOS FinFETs for multi- VTh engineering

KAUST Repository

Hussain, Muhammad Mustafa; Smith, Casey Eben; Harris, Harlan Rusty; Young, Chadwin; Tseng, Hsinghuang; Jammy, Rajarao

2010-01-01

Gate-first integration of tunable work function metal gates of different thicknesses (320 nm) into high-k/metal gates CMOS FinFETs was demonstrated to achieve multiple threshold voltages (VTh) for 32-nm technology and beyond logic, memory, input/output, and system-on-a-chip applications. The fabricated devices showed excellent short-channel effect immunity (drain-induced barrier lowering ∼ 40 mV/V), nearly symmetric VTh, low T inv(∼ 1.4 nm), and high Ion(∼780μAμm) for N/PMOS without any intentional strain enhancement. © 2006 IEEE.

Gate-first integration of tunable work function metal gates of different thicknesses into high-k metal gates CMOS FinFETs for multi- VTh engineering

KAUST Repository

Hussain, Muhammad Mustafa

2010-03-01

Gate-first integration of tunable work function metal gates of different thicknesses (320 nm) into high-k/metal gates CMOS FinFETs was demonstrated to achieve multiple threshold voltages (VTh) for 32-nm technology and beyond logic, memory, input/output, and system-on-a-chip applications. The fabricated devices showed excellent short-channel effect immunity (drain-induced barrier lowering ∼ 40 mV/V), nearly symmetric VTh, low T inv(∼ 1.4 nm), and high Ion(∼780μAμm) for N/PMOS without any intentional strain enhancement. © 2006 IEEE.

EPMLR: sequence-based linear B-cell epitope prediction method using multiple linear regression.

Science.gov (United States)

Lian, Yao; Ge, Meng; Pan, Xian-Ming

2014-12-19

B-cell epitopes have been studied extensively due to their immunological applications, such as peptide-based vaccine development, antibody production, and disease diagnosis and therapy. Despite several decades of research, the accurate prediction of linear B-cell epitopes has remained a challenging task. In this work, based on the antigen's primary sequence information, a novel linear B-cell epitope prediction model was developed using the multiple linear regression (MLR). A 10-fold cross-validation test on a large non-redundant dataset was performed to evaluate the performance of our model. To alleviate the problem caused by the noise of negative dataset, 300 experiments utilizing 300 sub-datasets were performed. We achieved overall sensitivity of 81.8%, precision of 64.1% and area under the receiver operating characteristic curve (AUC) of 0.728. We have presented a reliable method for the identification of linear B cell epitope using antigen's primary sequence information. Moreover, a web server EPMLR has been developed for linear B-cell epitope prediction: http://www.bioinfo.tsinghua.edu.cn/epitope/EPMLR/ .

Kneser-Hecke-operators in coding theory

OpenAIRE

Nebe, Gabriele

2005-01-01

The Kneser-Hecke-operator is a linear operator defined on the complex vector space spanned by the equivalence classes of a family of self-dual codes of fixed length. It maps a linear self-dual code $C$ over a finite field to the formal sum of the equivalence classes of those self-dual codes that intersect $C$ in a codimension 1 subspace. The eigenspaces of this self-adjoint linear operator may be described in terms of a coding-theory analogue of the Siegel $\\Phi $-operator.

Sensitivity study and parameter optimization of OCD tool for 14nm finFET process

Science.gov (United States)

Zhang, Zhensheng; Chen, Huiping; Cheng, Shiqiu; Zhan, Yunkun; Huang, Kun; Shi, Yaoming; Xu, Yiping

2016-03-01

Optical critical dimension (OCD) measurement has been widely demonstrated as an essential metrology method for monitoring advanced IC process in the technology node of 90 nm and beyond. However, the rapidly shrunk critical dimensions of the semiconductor devices and the increasing complexity of the manufacturing process bring more challenges to OCD. The measurement precision of OCD technology highly relies on the optical hardware configuration, spectral types, and inherently interactions between the incidence of light and various materials with various topological structures, therefore sensitivity analysis and parameter optimization are very critical in the OCD applications. This paper presents a method for seeking the optimum sensitive measurement configuration to enhance the metrology precision and reduce the noise impact to the greatest extent. In this work, the sensitivity of different types of spectra with a series of hardware configurations of incidence angles and azimuth angles were investigated. The optimum hardware measurement configuration and spectrum parameter can be identified. The FinFET structures in the technology node of 14 nm were constructed to validate the algorithm. This method provides guidance to estimate the measurement precision before measuring actual device features and will be beneficial for OCD hardware configuration.

Low-voltage organic field-effect transistors based on novel high-κ organometallic lanthanide complex for gate insulating materials

Energy Technology Data Exchange (ETDEWEB)

Liu, Qi; Li, Yi; Zhang, Yang; Song, You, E-mail: wangxzh@nju.edu.cn, E-mail: yli@nju.edu.cn, E-mail: yousong@nju.edu.cn; Wang, Xizhang, E-mail: wangxzh@nju.edu.cn, E-mail: yli@nju.edu.cn, E-mail: yousong@nju.edu.cn; Hu, Zheng [Key Laboratory of Mesoscopic Chemistry of MOE, Jiangsu Provincial Lab for Nanotechnology, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210093, China. High-Tech Research Institute of Nanjing University (Suzhou), Suzhou 215123 (China); Sun, Huabin; Li, Yun, E-mail: wangxzh@nju.edu.cn, E-mail: yli@nju.edu.cn, E-mail: yousong@nju.edu.cn; Shi, Yi [School of Electronic Science and Engineering and Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials, Nanjing University, Nanjing 210093 (China)

2014-08-15

A novel high-κ organometallic lanthanide complex, Eu(tta){sub 3}L (tta=2-thenoyltrifluoroacetonate, L = 4,5-pinene bipyridine), is used as gate insulating material to fabricate low-voltage pentacene field-effect transistors (FETs). The optimized gate insulator exhibits the excellent properties such as low leakage current density, low surface roughness, and high dielectric constant. When operated under a low voltage of −5 V, the pentacene FET devices show the attractive electrical performance, e.g. carrier mobility (μ{sub FET}) of 0.17 cm{sup 2} V{sup −1} s{sup −1}, threshold voltage (V{sub th}) of −0.9 V, on/off current ratio of 5 × 10{sup 3}, and subthreshold slope (SS) of 1.0 V dec{sup −1}, which is much better than that of devices obtained on conventional 300 nm SiO{sub 2} substrate (0.13 cm{sup 2} V{sup −1} s{sup −1}, −7.3 V and 3.1 V dec{sup −1} for μ{sub FET}, V{sub th} and SS value when operated at −30 V). These results indicate that this kind of high-κ organometallic lanthanide complex becomes a promising candidate as gate insulator for low-voltage organic FETs.

Current linearity and operation stability in Al2O3-gate AlGaN/GaN MOS high electron mobility transistors

Science.gov (United States)

Nishiguchi, Kenya; Kaneki, Syota; Ozaki, Shiro; Hashizume, Tamotsu

2017-10-01

To investigate current linearity and operation stability of metal-oxide-semiconductor (MOS) AlGaN/GaN high electron mobility transistors (HEMTs), we have fabricated and characterized the Al2O3-gate MOS-HEMTs without and with a bias annealing in air at 300 °C. Compared with the as-fabricated (unannealed) MOS HEMTs, the bias-annealed devices showed improved linearity of I D-V G curves even in the forward bias regime, resulting in increased maximum drain current. Lower subthreshold slope was also observed after bias annealing. From the precise capacitance-voltage analysis on a MOS diode fabricated on the AlGaN/GaN heterostructure, it was found that the bias annealing effectively reduced the state density at the Al2O3/AlGaN interface. This led to efficient modulation of the AlGaN surface potential close to the conduction band edge, resulting in good gate control of two-dimensional electron gas density even at forward bias. In addition, the bias-annealed MOS HEMT showed small threshold voltage shift after applying forward bias stress and stable operation even at high temperatures.

On-line control models for the Stanford Linear Collider

International Nuclear Information System (INIS)

Sheppard, J.C.; Helm, R.H.; Lee, M.J.; Woodley, M.D.

1983-03-01

Models for computer control of the SLAC three-kilometer linear accelerator and damping rings have been developed as part of the control system for the Stanford Linear Collider. Some of these models have been tested experimentally and implemented in the control program for routine linac operations. This paper will describe the development and implementation of these models, as well as some of the operational results

The Stanford Linear Collider

International Nuclear Information System (INIS)

Emma, P.

1995-01-01

The Stanford Linear Collider (SLC) is the first and only high-energy e + e - linear collider in the world. Its most remarkable features are high intensity, submicron sized, polarized (e - ) beams at a single interaction point. The main challenges posed by these unique characteristics include machine-wide emittance preservation, consistent high intensity operation, polarized electron production and transport, and the achievement of a high degree of beam stability on all time scales. In addition to serving as an important machine for the study of Z 0 boson production and decay using polarized beams, the SLC is also an indispensable source of hands-on experience for future linear colliders. Each new year of operation has been highlighted with a marked improvement in performance. The most significant improvements for the 1994-95 run include new low impedance vacuum chambers for the damping rings, an upgrade to the optics and diagnostics of the final focus systems, and a higher degree of polarization from the electron source. As a result, the average luminosity has nearly doubled over the previous year with peaks approaching 10 30 cm -2 s -1 and an 80% electron polarization at the interaction point. These developments as well as the remaining identifiable performance limitations will be discussed

Hybrid Si/TMD 2D electronic double channels fabricated using solid CVD few-layer-MoS2 stacking for Vth matching and CMOS-compatible 3DFETs

KAUST Repository

Chen, Min Cheng; Lin, Chia Yi; Li, Kai Hsin; Li, Lain-Jong; Chen, Chang Hsiao; Chuang, Cheng Hao; Lee, Ming Dao; Chen, Yi Ju; Hou, Yun Fang; Lin, Chang Hsien; Chen, Chun Chi; Wu, Bo Wei; Wu, Cheng San; Yang, Ivy; Lee, Yao Jen; Yeh, Wen Kuan; Wang, Tahui; Yang, Fu Liang; Hu, Chenming

2014-01-01

Stackable 3DFETs such as FinFET using hybrid Si/MoS2 channels were developed using a fully CMOS-compatible process. Adding several molecular layers (3-16 layers) of the transition-metal dichalcogenide (TMD), MoS2 to Si fin and nanowire resulted in improved (+25%) Ion,n of the FinFET and nanowire FET (NWFET). The PFETs also operated effectively and the N/P device Vth are low and matched perfectly. The proposed heterogeneous Si/TMD 3DFETs can be useful in future electronics. © 2014 IEEE.

Hybrid Si/TMD 2D electronic double channels fabricated using solid CVD few-layer-MoS2 stacking for Vth matching and CMOS-compatible 3DFETs

KAUST Repository

Chen, Min Cheng

2014-12-01

Stackable 3DFETs such as FinFET using hybrid Si/MoS2 channels were developed using a fully CMOS-compatible process. Adding several molecular layers (3-16 layers) of the transition-metal dichalcogenide (TMD), MoS2 to Si fin and nanowire resulted in improved (+25%) Ion,n of the FinFET and nanowire FET (NWFET). The PFETs also operated effectively and the N/P device Vth are low and matched perfectly. The proposed heterogeneous Si/TMD 3DFETs can be useful in future electronics. © 2014 IEEE.

Operation planning for a pondage power station chain by means of linear programming and genetic optimisation; Einsatzplanung fuer eine Flusskraftwerkskette im Schwellbetrieb mittels LP und genetischer Optimierung

Energy Technology Data Exchange (ETDEWEB)

Mueller, H.; Huelsemann, M.

1997-12-31

This paper presents a system package which serves as a simulation and optimisation tool for daily operation planning for a hydroelectric cascade. The purpose of the planning is to maximise (the differentially weighted) production of electrical energy given a certain set of specifications and secondary conditions. Optimal operation management is achieved using a two-stage approach: first pre-optimisation by means of linear programming, followed by detail optimisation using a Genetic Algorithm based on a non-linear, dynamic model of the power station and reservoir chain. [Deutsch] Im Beitrag wird ein Systempaket als Simulations- und Optimierungswerkzeug zur taeglichen Betriebsplanung einer Wasserkraftwerkskaskade vorgestellt. Ziel der Wasserbewirtschaftung ist es, unter den gegebenen Vorgaben und Randbedingungen die (bewertete) Erzeugung elektrischer Energie zu maximieren. Das optimale Fahrplanmanagement wird durch einen zweistufigen Loesungsansatz realisiert: Mit einer Vor-Optimierung mittels Linearer Programmierung (LP), gefolgt von einer detaillierten Optimierung mit einem Genetischen Algorithmus, der auf ein nichtlineares, dynamisches Simulationsmodell fuer die Kette aus Kraftwerken und Stauraeumen zugreift. (orig./RHM)

Mathematical methods linear algebra normed spaces distributions integration

CERN Document Server

Korevaar, Jacob

1968-01-01

Mathematical Methods, Volume I: Linear Algebra, Normed Spaces, Distributions, Integration focuses on advanced mathematical tools used in applications and the basic concepts of algebra, normed spaces, integration, and distributions.The publication first offers information on algebraic theory of vector spaces and introduction to functional analysis. Discussions focus on linear transformations and functionals, rectangular matrices, systems of linear equations, eigenvalue problems, use of eigenvectors and generalized eigenvectors in the representation of linear operators, metric and normed vector

Final Environmental Assessment for the construction and operation of an office building at the Stanford Linear Accelerator Center. Part 2

International Nuclear Information System (INIS)

1995-08-01

The Department of Energy (DOE) has prepared an Environmental Assessment (EA), DOE/EA-1107, analyzing the environmental effects relating to the construction and operation of an office building at the Stanford Linear Accelerator Center (SLAC). SLAC is a national facility operated by Stanford University, California, under contract with DOE. The center is dedicated to research in elementary particle physics and in those fields that make use of its synchrotron facilities. The objective for the construction and operation of an office building is to provide adequate office space for existing SLAC Waste Management (WM) personnel, so as to centralize WM personnel and to make WM operations more efficient and effective. Based on the analyses in the EA, the DOE has determined that the proposed action does not constitute a major Federal action significantly affecting the quality of the human environment within the meaning of the National Environmental Policy Act of 1969 (NEPA). Therefore, the preparation of an Environmental Impact Statement is not required. This report contains the Environmental Assessment, as well as the Finding of No Significant Impact (FONSI)

Modeling nanowire and double-gate junctionless field-effect transistors

CERN Document Server

Jazaeri, Farzan

2018-01-01

The first book on the topic, this is a comprehensive introduction to the modeling and design of junctionless field effect transistors (FETs). Beginning with a discussion of the advantages and limitations of the technology, the authors also provide a thorough overview of published analytical models for double-gate and nanowire configurations, before offering a general introduction to the EPFL charge-based model of junctionless FETs. Important features are introduced gradually, including nanowire versus double-gate equivalence, technological design space, junctionless FET performances, short channel effects, transcapacitances, asymmetric operation, thermal noise, interface traps, and the junction FET. Additional features compatible with biosensor applications are also discussed. This is a valuable resource for students and researchers looking to understand more about this new and fast developing field.

Cylindrical-shaped nanotube field effect transistor

KAUST Repository

Hussain, Muhammad Mustafa; Fahad, Hossain M.; Smith, Casey E.; Rojas, Jhonathan Prieto

2015-01-01

A cylindrical-shaped nanotube FET may be manufactured on silicon (Si) substrates as a ring etched into a gate stack and filled with semiconductor material. An inner gate electrode couples to a region of the gate stack inside the inner circumference of the ring. An outer gate electrode couples to a region of the gate stack outside the outer circumference of the ring. The multi-gate cylindrical-shaped nanotube FET operates in volume inversion for ring widths below 15 nanometers. The cylindrical-shaped nanotube FET demonstrates better short channel effect (SCE) mitigation and higher performance (I.sub.on/I.sub.off) than conventional transistor devices. The cylindrical-shaped nanotube FET may also be manufactured with higher yields and cheaper costs than conventional transistors.

Cylindrical-shaped nanotube field effect transistor

KAUST Repository

Hussain, Muhammad Mustafa

2015-12-29

A cylindrical-shaped nanotube FET may be manufactured on silicon (Si) substrates as a ring etched into a gate stack and filled with semiconductor material. An inner gate electrode couples to a region of the gate stack inside the inner circumference of the ring. An outer gate electrode couples to a region of the gate stack outside the outer circumference of the ring. The multi-gate cylindrical-shaped nanotube FET operates in volume inversion for ring widths below 15 nanometers. The cylindrical-shaped nanotube FET demonstrates better short channel effect (SCE) mitigation and higher performance (I.sub.on/I.sub.off) than conventional transistor devices. The cylindrical-shaped nanotube FET may also be manufactured with higher yields and cheaper costs than conventional transistors.

Hamiltonian structure of linearly extended Virasoro algebra

International Nuclear Information System (INIS)

Arakelyan, T.A.; Savvidi, G.K.

1991-01-01

The Hamiltonian structure of linearly extended Virasoro algebra which admits free bosonic field representation is described. An example of a non-trivial extension is found. The hierarchy of integrable non-linear equations corresponding to this Hamiltonian structure is constructed. This hierarchy admits the Lax representation by matrix Lax operator of second order

COMPARISON OF IMPLICIT SCHEMES TO SOLVE EQUATIONS OF RADIATION HYDRODYNAMICS WITH A FLUX-LIMITED DIFFUSION APPROXIMATION: NEWTON–RAPHSON, OPERATOR SPLITTING, AND LINEARIZATION

Energy Technology Data Exchange (ETDEWEB)

Tetsu, Hiroyuki; Nakamoto, Taishi, E-mail: h.tetsu@geo.titech.ac.jp [Earth and Planetary Sciences, Tokyo Institute of Technology, Tokyo 152-8551 (Japan)

2016-03-15

Radiation is an important process of energy transport, a force, and a basis for synthetic observations, so radiation hydrodynamics (RHD) calculations have occupied an important place in astrophysics. However, although the progress in computational technology is remarkable, their high numerical cost is still a persistent problem. In this work, we compare the following schemes used to solve the nonlinear simultaneous equations of an RHD algorithm with the flux-limited diffusion approximation: the Newton–Raphson (NR) method, operator splitting, and linearization (LIN), from the perspective of the computational cost involved. For operator splitting, in addition to the traditional simple operator splitting (SOS) scheme, we examined the scheme developed by Douglas and Rachford (DROS). We solve three test problems (the thermal relaxation mode, the relaxation and the propagation of linear waves, and radiating shock) using these schemes and then compare their dependence on the time step size. As a result, we find the conditions of the time step size necessary for adopting each scheme. The LIN scheme is superior to other schemes if the ratio of radiation pressure to gas pressure is sufficiently low. On the other hand, DROS can be the most efficient scheme if the ratio is high. Although the NR scheme can be adopted independently of the regime, especially in a problem that involves optically thin regions, the convergence tends to be worse. In all cases, SOS is not practical.

Linear accelerator use in the nuclear field

International Nuclear Information System (INIS)

Lecomte, J.-C.

Radiography of internal conformity is performed on weldments and thick castings using linear accelerators. The basic principles relating to linear accelerators are outlined and their advantages over Co 60 sources described. Linear accelerator operation related requirements are presented as well as the use of this apparatus as a method for volumetric inspection, during fabrication of French Nuclear Steam Supply Systems (NSSS). Finally the resources needed to use this technique as an inspection method is dealt with [fr

Wavy channel transistor for area efficient high performance operation

KAUST Repository

Fahad, Hossain M.; Hussain, Aftab M.; Hussain, Muhammad Mustafa; Sevilla, Galo T.

2013-01-01

We report a wavy channel FinFET like transistor where the channel is wavy to increase its width without any area penalty and thereby increasing its drive current. Through simulation and experiments, we show the effectiveness of such device

Interior Point Method for Solving Fuzzy Number Linear Programming Problems Using Linear Ranking Function

Directory of Open Access Journals (Sweden)

Yi-hua Zhong

2013-01-01

Full Text Available Recently, various methods have been developed for solving linear programming problems with fuzzy number, such as simplex method and dual simplex method. But their computational complexities are exponential, which is not satisfactory for solving large-scale fuzzy linear programming problems, especially in the engineering field. A new method which can solve large-scale fuzzy number linear programming problems is presented in this paper, which is named a revised interior point method. Its idea is similar to that of interior point method used for solving linear programming problems in crisp environment before, but its feasible direction and step size are chosen by using trapezoidal fuzzy numbers, linear ranking function, fuzzy vector, and their operations, and its end condition is involved in linear ranking function. Their correctness and rationality are proved. Moreover, choice of the initial interior point and some factors influencing the results of this method are also discussed and analyzed. The result of algorithm analysis and example study that shows proper safety factor parameter, accuracy parameter, and initial interior point of this method may reduce iterations and they can be selected easily according to the actual needs. Finally, the method proposed in this paper is an alternative method for solving fuzzy number linear programming problems.

Total aortic arch replacement with the frozen elephant trunk technique: 10-year follow-up single-centre experience.

Science.gov (United States)

Ius, Fabio; Fleissner, Felix; Pichlmaier, Maximilian; Karck, Matthias; Martens, Andreas; Haverich, Axel; Shrestha, Malakh

2013-11-01

Since August 2001, the frozen elephant trunk (FET) technique has been used at our institution to treat degenerative or dissecting aneurysms involving the aortic arch and descending aorta as a potential 'single-stage' procedure. The aim of this study was to review our FET experience and to present the 10-year results. Between August 2001 and January 2012, 131 patients underwent FET implant with three different prostheses: the custom-made Chavan-Haverich (n = 66), the Jotec E-vita (n = 30) and the Vascutek Thoraflex (n = 35) prostheses. Concomitant procedures included aortic valve-sparing operations (David, n = 17) and aortic root replacement (Bentall, n = 25). Patient records and the first postoperative and last available computer tomography (CT) were retrospectively reviewed. Incidence of rethoracotomy for bleeding, stroke, spinal cord injury, prolonged ventilatory support (>96 h) and acute renal failure requiring dialysis were 18, 11, 1, 41 and 16%, respectively. In-hospital mortality was 15%. The mean follow-up was 42 ± 37 (range 1-134 months). At 1, 5 and 10 years, survivals were 82 ± 3, 72 ± 5 and 58 ± 8%, respectively. Freedoms from distal aortic operation were 81 ± 4, 67 ± 5 and 43 ± 13%, respectively. Thirty-six patients underwent 40 distal aortic operations, either open surgical (n = 22, 55%) or endovascular (n = 18, 45%). Chronic aortic dissection was identified as an independent risk factor for distal aortic operation (odds ratio = 3.8; 95% confidence interval 1.5-9.3; P = 0.004). At last CT control, false-lumen thrombosis rates up to 93% were achieved around the stent graft. An FET concept adds to the armament of the surgeon in the treatment of complex and diverse aortic arch pathologies. The preoperative patient risk profile explains the postoperative morbidity and in-hospital mortality. The FET can potentially be still a 'one-stage' procedure in selected patients. However, the extension of FET to patients with extensive aortic aneurysms has led

Superconducting linear colliders

International Nuclear Information System (INIS)

Anon.

1990-01-01

The advantages of superconducting radiofrequency (SRF) for particle accelerators have been demonstrated by successful operation of systems in the TRISTAN and LEP electron-positron collider rings respectively at the Japanese KEK Laboratory and at CERN. If performance continues to improve and costs can be lowered, this would open an attractive option for a high luminosity TeV (1000 GeV) linear collider

Noncommutative operational calculus

Directory of Open Access Journals (Sweden)

Henry E. Heatherly

1999-12-01

Full Text Available Oliver Heaviside's operational calculus was placed on a rigorous mathematical basis by Jan Mikusinski, who constructed an algebraic setting for the operational methods. In this paper, we generalize Mikusi'{n}ski's methods to solve linear ordinary differential equations in which the unknown is a matrix- or linear operator-valued function. Because these functions can be zero-divisors and do not necessarily commute, Mikusi'{n}ski's one-dimensional calculus cannot be used. The noncommuative operational calculus developed here,however, is used to solve a wide class of such equations. In addition, we provide new proofs of existence and uniqueness theorems for certain matrix- and operator valued Volterra integral and integro-differential equations. Several examples are given which demonstrate these new methods.

A Reduced Dantzig-Wolfe Decomposition for a Suboptimal Linear MPC

DEFF Research Database (Denmark)

Standardi, Laura; Poulsen, Niels Kjølstad; Jørgensen, John Bagterp

2014-01-01

Linear Model Predictive Control (MPC) is an efficient control technique that repeatedly solves online constrained linear programs. In this work we propose an economic linear MPC strategy for operation of energy systems consisting of multiple and independent power units. These systems cooperate...

Linearity of holographic entanglement entropy

Energy Technology Data Exchange (ETDEWEB)

Almheiri, Ahmed [Stanford Institute for Theoretical Physics, Department of Physics,Stanford University, Stanford, CA 94305 (United States); Dong, Xi [School of Natural Sciences, Institute for Advanced Study,Princeton, NJ 08540 (United States); Swingle, Brian [Stanford Institute for Theoretical Physics, Department of Physics,Stanford University, Stanford, CA 94305 (United States)

2017-02-14

We consider the question of whether the leading contribution to the entanglement entropy in holographic CFTs is truly given by the expectation value of a linear operator as is suggested by the Ryu-Takayanagi formula. We investigate this property by computing the entanglement entropy, via the replica trick, in states dual to superpositions of macroscopically distinct geometries and find it consistent with evaluating the expectation value of the area operator within such states. However, we find that this fails once the number of semi-classical states in the superposition grows exponentially in the central charge of the CFT. Moreover, in certain such scenarios we find that the choice of surface on which to evaluate the area operator depends on the density matrix of the entire CFT. This nonlinearity is enforced in the bulk via the homology prescription of Ryu-Takayanagi. We thus conclude that the homology constraint is not a linear property in the CFT. We also discuss the existence of ‘entropy operators’ in general systems with a large number of degrees of freedom.

Linear approximation model network and its formation via ...

Indian Academy of Sciences (India)

To overcome the deficiency of `local model network' (LMN) techniques, an alternative `linear approximation model' (LAM) network approach is proposed. Such a network models a nonlinear or practical system with multiple linear models fitted along operating trajectories, where individual models are simply networked ...

LINEAR AND NONLINEAR CORRECTIONS IN THE RHIC INTERACTION REGIONS

International Nuclear Information System (INIS)

PILAT, F.; CAMERON, P.; PTITSYN, V.; KOUTCHOUK, J.P.

2002-01-01

A method has been developed to measure operationally the linear and non-linear effects of the interaction region triplets, that gives access to the multipole content through the action kick, by applying closed orbit bumps and analyzing tune and orbit shifts. This technique has been extensively tested and used during the RHIC operations in 2001. Measurements were taken at 3 different interaction regions and for different focusing at the interaction point. Non-linear effects up to the dodecapole have been measured as well as the effects of linear, sextupolar and octupolar corrections. An analysis package for the data processing has been developed that through a precise fit of the experimental tune shift data (measured by a phase lock loop technique to better than 10 -5 resolution) determines the multipole content of an IR triplet

Multivariate dynamic linear models for estimating the effect of experimental interventions in an evolutionary operations setup in dairy herds

DEFF Research Database (Denmark)

Stygar, Anna Helena; Krogh, Mogens Agerbo; Kristensen, Troels

2017-01-01

Evolutionary operations is a method to exploit the association of often small changes in process variables, planned during systematic experimentation and occurring during the normal production flow, to production characteristics to find a way to alter the production process to be more efficient....... The objective of this study was to construct a tool to assess the intervention effect on milk production in an evolutionary operations setup. The method used for this purpose was a dynamic linear model (DLM) with Kalman filtering. The DLM consisted of parameters describing milk yield in a herd, individual cows...... bulk tank records. The presented model proved to be a flexible and dynamic tool, and it was successfully applied for systematic experimentation in dairy herds. The model can serve as a decision support tool for on-farm process optimization exploiting planned changes in process variables...

Stable Operation and Electricity Generating Characteristics of a Single-Cylinder Free Piston Engine Linear Generator: Simulation and Experiments

Directory of Open Access Journals (Sweden)

Huihua Feng

2015-01-01

Full Text Available We present a novel design of a single-cylinder free piston engine linear generator (FPELG incorporating a linear motor as a rebound device. A systematic simulation model of this FPELG system was built containing a kinematic and dynamic model of the piston and mover, a magneto-electric model of the linear generator, a thermodynamic model of the single-cylinder engine, and a friction model between the piston ring and cylinder liner. Simulations were performed to understand the relationships between pre-set motor parameters and the running performance of the FPELG. From the simulation results, it was found that a motor rebound force with a parabolic profile had clear advantages over a force with a triangular profile, such as a higher running frequency and peak cylinder pressure, faster piston motion, etc. The rebound position and the amplitude of rebound force were also determined by simulations. The energy conversion characteristics of the generator were obtained from our FPELG test rig. The parameters of intake pressure, motor frequency, and load resistance were varied over certain ranges, and relationships among these three parameters were obtained. The electricity-generating characteristic parameters include output power and system efficiency, which can measure the quality of matching the controllable parameters. The output power can reach 25.9 W and the system efficiency can reach 13.7%. The results in terms of matching parameters and electricity-generating characteristics should be useful to future research in adapting these engines to various operating modes.

Single Particle Linear and Nonlinear Dynamics

International Nuclear Information System (INIS)

Cai, Y

2004-01-01

I will give a comprehensive review of existing particle tracking tools to assess long-term particle stability for small and large accelerators in the presence of realistic magnetic imperfections and machine misalignments. The emphasis will be on the tracking and analysis tools based upon the differential algebra, Lie operator, and ''polymorphism''. Using these tools, a uniform linear and non-linear analysis will be outlined as an application of the normal form

A mixed integer linear programming model for operational planning of a biodiesel supply chain network from used cooking oil

Science.gov (United States)

Jonrinaldi, Hadiguna, Rika Ampuh; Salastino, Rades

2017-11-01

Environmental consciousness has paid many attention nowadays. It is not only about how to recycle, remanufacture or reuse used end products but it is also how to optimize the operations of the reverse system. A previous research has proposed a design of reverse supply chain of biodiesel network from used cooking oil. However, the research focused on the design of the supply chain strategy not the operations of the supply chain. It only decided how to design the structure of the supply chain in the next few years, and the process of each stage will be conducted in the supply chain system in general. The supply chain system has not considered operational policies to be conducted by the companies in the supply chain. Companies need a policy for each stage of the supply chain operations to be conducted so as to produce the optimal supply chain system, including how to use all the resources that have been designed in order to achieve the objectives of the supply chain system. Therefore, this paper proposes a model to optimize the operational planning of a biodiesel supply chain network from used cooking oil. A mixed integer linear programming is developed to model the operational planning of biodiesel supply chain in order to minimize the total operational cost of the supply chain. Based on the implementation of the model developed, the total operational cost of the biodiesel supply chain incurred by the system is less than the total operational cost of supply chain based on the previous research during seven days of operational planning about amount of 2,743,470.00 or 0.186%. Production costs contributed to 74.6 % of total operational cost and the cost of purchasing the used cooking oil contributed to 24.1 % of total operational cost. So, the system should pay more attention to these two aspects as changes in the value of these aspects will cause significant effects to the change in the total operational cost of the supply chain.

The operation of a single-sided linear induction motor with squirrel-cage and solid-steel reaction rails

Science.gov (United States)

Eastham, A. R.; Katz, R. M.

1980-09-01

Two test programs have been conducted to evaluate the performance of a single-sided linear induction motor with a squirrel-cage reaction rail and with a solid steel reaction rail. A 1.73-m-long six-pole stator interacted with the rails mounted on the rim of a 7.6-m-diam wheel. A 64-channel data acquisition system allowed tests to be performed over a wide range of operating conditions at speeds up to 20 m/sec. Typical test results which compare and contrast the mechanical, electrical and magnetic behavior of the SLIMs are presented. The test data are being used to assess the SLIM as an integrated suspension/propulsion system and for other transportation applications.

Identification of time-to-peak on dynamic 18F-FET-PET as a prognostic marker specifically in IDH1/2 mutant diffuse astrocytoma.

Science.gov (United States)

Suchorska, Bogdana; Giese, Armin; Biczok, Annamaria; Unterrainer, Marcus; Weller, Michael; Drexler, Mark; Bartenstein, Peter; Schüller, Ulrich; Tonn, Jörg-Christian; Albert, Nathalie L

2018-01-22

Stratification of glioma according to isocitrate dehydrogenase 1/2 (IDH1/2) mutation and 1p/19q codeletion status has gained major importance in the new World Health Organization (WHO) classification. Parameters derived from uptake dynamics of 18F-fluoro-ethyl-tyrosine PET (18F-FET-PET) such as minimal time-to-peak (TTPmin) allow discrimination between different prognostic glioma subgroups, too. The present study is aimed at exploring whether TTPmin analysis provides prognostic information beyond the WHO classification. Three hundred patients with newly diagnosed WHO 2007 grades II-IV gliomas with 18F-FET-PET imaging at diagnosis were grouped into 4 subgroups (IDH1/2 mut-1p/19q codel; IDH1/2 mut-1p/19q non-codel; IDH1/2 wildtype WHO grade II and III tumors; and glioblastoma). Clinical and imaging factors such as age, Karnofsky performance score, treatment, TTPmin, and maximal tumor-to-brain ratio (TBRmax) were analyzed with regard to progression-free and overall survival (PFS and OS) via univariate and multivariate regression analysis. PFS and OS were longest in the IDH1/2 mut-1p/19q codel subgroup, followed by IDH1/2 mut-1p/19q non-codel, IDH1/2 wildtype, and GBM (P 17.5 minutes (P PET-derived dynamic analysis defines prognostically distinct subgroups of IDH1/2 mutant-1p/19q non-codel gliomas which cannot be distinguished as yet by molecular marker analysis. © The Author(s) 2017. Published by Oxford University Press on behalf of the Society for Neuro-Oncology. All rights reserved. For permissions, please e-mail: journals.permissions@oup.com

Matrix Operations for Engineers and Scientists An Essential Guide in Linear Algebra

CERN Document Server

Jeffrey, Alan

2010-01-01

Engineers and scientists need to have an introduction to the basics of linear algebra in a context they understand. Computer algebra systems make the manipulation of matrices and the determination of their properties a simple matter, and in practical applications such software is often essential. However, using this tool when learning about matrices, without first gaining a proper understanding of the underlying theory, limits the ability to use matrices and to apply them to new problems. This book explains matrices in the detail required by engineering or science students, and it discusses linear systems of ordinary differential equations. These students require a straightforward introduction to linear algebra illustrated by applications to which they can relate. It caters of the needs of undergraduate engineers in all disciplines, and provides considerable detail where it is likely to be helpful. According to the author the best way to understand the theory of matrices is by working simple exercises designe...

Junction-less poly-Ge FinFET and charge-trap NVM fabricated by laser-enabled low thermal budget processes

Energy Technology Data Exchange (ETDEWEB)

Huang, Wen-Hsien; Shen, Chang-Hong; Wang, Hsing-Hsiang; Yang, Chih-Chao; Hsieh, Tung-Ying; Hsieh, Jin-Long; Yeh, Wen-Kuan [National Nano Device Laboratories, No. 26, Prosperity Road 1, Hsinchu 30078, Taiwan (China); Shieh, Jia-Min, E-mail: jmshieh@narlabs.org.tw, E-mail: jmshieh@faculty.nctu.edu.tw [National Nano Device Laboratories, No. 26, Prosperity Road 1, Hsinchu 30078, Taiwan (China); Departments of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan (China); Huang, Tzu-En [Departments of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan (China)

2016-06-13

A doping-free poly-Ge film as channel material was implemented by CVD-deposited nano-crystalline Ge and visible-light laser crystallization, which behaves as a p-type semiconductor, exhibiting holes concentration of 1.8 × 10{sup 18 }cm{sup −3} and high crystallinity (Raman FWHM ∼ 4.54 cm{sup −1}). The fabricated junctionless 7 nm-poly-Ge FinFET performs at an I{sub on}/I{sub off} ratio over 10{sup 5} and drain-induced barrier lowering of 168 mV/V. Moreover, the fast programming speed of 100 μs–1 ms and reliable retention can be obtained from the junctionless poly-Ge nonvolatile-memory. Such junctionless poly-Ge devices with low thermal budget are compatible with the conventional CMOS technology and are favorable for 3D sequential-layer integration and flexible electronics.

Experience with the conventional and frozen elephant trunk techniques: a single-centre study.

Science.gov (United States)

Leontyev, Sergey; Borger, Michael A; Etz, Christian D; Moz, Monica; Seeburger, Joerg; Bakhtiary, Farhard; Misfeld, Martin; Mohr, Friedrich W

2013-12-01

The treatment of patients with extensive thoracic aortic disease involving the arch and descending/thoracoabdominal aorta is often performed using an elephant trunk procedure. We retrospectively analysed our results comparing two different techniques: the conventional elephant trunk (cET) and the frozen elephant trunk (FET) operation. Between January 2003 and December 2011, 171 consecutive patients underwent total aortic arch replacement with either a cET (n = 125) or FET (n = 46) technique. The mean age was 64 ± 13 years and was significantly higher in the FET group (P 40 min was an independent predictor for permanent spinal cord injury (OR 5.0, 95% CI 1.1-20, P = 0.038). The estimated 1-, 3- and 5-year survival were 70 ± 4, 70 ± 4 and 68 ± 4% (cET) and 4 ± 7 and 60 ± 9, 40 ± 1% (FET), with mean survival time 5.2 ± 0.3 vs 3.8 ± 0.5 years (cET vs FET, log-rank P = 0.9). The FET procedure for extensive thoracic aortic disease is associated with an acceptable mortality rate, but with a higher incidence of perioperative spinal cord injury than cET. Arch replacement with a cET technique should be strongly considered in patients with expected prolonged circulatory arrest times, particularly if operated on under mild or moderate hypothermia. Axillary cannulation is associated with superior neurological outcomes and Type A acute aortic dissection is a risk factor for mortality and poor neurological outcomes in this patient population.

Topics in linear optical quantum computation

Science.gov (United States)

Glancy, Scott Charles

This thesis covers several topics in optical quantum computation. A quantum computer is a computational device which is able to manipulate information by performing unitary operations on some physical system whose state can be described as a vector (or mixture of vectors) in a Hilbert space. The basic unit of information, called the qubit, is considered to be a system with two orthogonal states, which are assigned logical values of 0 and 1. Photons make excellent candidates to serve as qubits. They have little interactions with the environment. Many operations can be performed using very simple linear optical devices such as beam splitters and phase shifters. Photons can easily be processed through circuit-like networks. Operations can be performed in very short times. Photons are ideally suited for the long-distance communication of quantum information. The great difficulty in constructing an optical quantum computer is that photons naturally interact weakly with one another. This thesis first gives a brief review of two early approaches to optical quantum computation. It will describe how any discrete unitary operation can be performed using a single photon and a network of beam splitters, and how the Kerr effect can be used to construct a two photon logic gate. Second, this work provides a thorough introduction to the linear optical quantum computer developed by Knill, Laflamme, and Milburn. It then presents this author's results on the reliability of this scheme when implemented using imperfect photon detectors. This author finds that quantum computers of this sort cannot be built using current technology. Third, this dissertation describes a method for constructing a linear optical quantum computer using nearly orthogonal coherent states of light as the qubits. It shows how a universal set of logic operations can be performed, including calculations of the fidelity with which these operations may be accomplished. It discusses methods for reducing and

Origin of noise in liquid-gated Si nanowire troponin biosensors

Science.gov (United States)

Kutovyi, Y.; Zadorozhnyi, I.; Hlukhova, H.; Handziuk, V.; Petrychuk, M.; Ivanchuk, Andriy; Vitusevich, S.

2018-04-01

Liquid-gated Si nanowire field-effect transistor (FET) biosensors are fabricated using a complementary metal-oxide-semiconductor-compatible top-down approach. The transport and noise properties of the devices reflect the high performance of the FET structures, which allows label-free detection of cardiac troponin I (cTnI) molecules. Moreover, after removing the troponin antigens the structures demonstrate the same characteristics as before cTnI detection, indicating the reusable operation of biosensors. Our results show that the additional noise is related to the troponin molecules and has characteristics which considerably differ from those usually recorded for conventional FETs without target molecules. We describe the origin of the noise and suggest that noise spectroscopy represents a powerful tool for understanding molecular dynamic processes in nanoscale FET-based biosensors.

Accelerating Dense Linear Algebra on the GPU

DEFF Research Database (Denmark)

Sørensen, Hans Henrik Brandenborg

and matrix-vector operations on GPUs. Such operations form the backbone of level 1 and level 2 routines in the Basic Linear Algebra Subroutines (BLAS) library and are therefore of great importance in many scientific applications. The target hardware is the most recent NVIDIA Tesla 20-series (Fermi...

An example in linear quadratic optimal control

NARCIS (Netherlands)

Weiss, George; Zwart, Heiko J.

1998-01-01

We construct a simple example of a quadratic optimal control problem for an infinite-dimensional linear system based on a shift semigroup. This system has an unbounded control operator. The cost is quadratic in the input and the state, and the weighting operators are bounded. Despite its extreme

Single Particle Linear and Nonlinear Dynamics

Energy Technology Data Exchange (ETDEWEB)

Cai, Y

2004-06-25

I will give a comprehensive review of existing particle tracking tools to assess long-term particle stability for small and large accelerators in the presence of realistic magnetic imperfections and machine misalignments. The emphasis will be on the tracking and analysis tools based upon the differential algebra, Lie operator, and ''polymorphism''. Using these tools, a uniform linear and non-linear analysis will be outlined as an application of the normal form.

Development and operation of a pixel segmented liquid-filled linear array for radiotherapy quality assurance

Energy Technology Data Exchange (ETDEWEB)

Pardo, J [Departamento de Fisica de Particulas, Facultade de Fisica, 15782 Santiago de Compostela (Spain); Franco, L [Departamento de Fisica de Particulas, Facultade de Fisica, 15782 Santiago de Compostela (Spain); Gomez, F [Departamento de Fisica de Particulas, Facultade de Fisica, 15782 Santiago de Compostela (Spain); Iglesias, A [Departamento de Fisica de Particulas, Facultade de Fisica, 15782 Santiago de Compostela (Spain); Pazos, A [Departamento de Fisica de Particulas, Facultade de Fisica, 15782 Santiago de Compostela (Spain); Pena, J [Departamento de Fisica de Particulas, Facultade de Fisica, 15782 Santiago de Compostela (Spain); Lobato, R [Hospital Clinico Universitario de Santiago, Santiago (Spain); Mosquera, J [Hospital Clinico Universitario de Santiago, Santiago (Spain); Pombar, M [Hospital Clinico Universitario de Santiago, Santiago (Spain); Sendon, J [Hospital Clinico Universitario de Santiago, Santiago (Spain)

2005-04-21

A liquid isooctane (C{sub 8}H{sub 18}) filled ionization linear array for radiotherapy quality assurance has been designed, built and tested. The detector consists of 128 pixels, each of them with an area of 1.7 mm x 1.7 mm and a gap of 0.5 mm. The small pixel size makes the detector ideal for high gradient beam profiles such as those present in intensity modulated radiation therapy (IMRT) and radiosurgery. As the read-out electronics we use the X-ray Data Acquisition System with the Xchip developed by the CCLRC. Studies concerning the collection efficiency dependence on the polarization voltage and on the dose rate have been made in order to optimize the device operation. In the first tests, we have studied dose rate and energy dependences. Dose rate dependence was found to be lower than 2.1% up to 5 Gy min{sup -1}, and energy dependence lower than 2.5% up to 20 cm depth in solid water. Output factors and penumbras for several rectangular fields have been measured with the linear array and were compared with the results obtained with a 0.125 cm{sup 3} air ionization chamber and radiographic film, respectively. Finally, we have acquired profiles for an IMRT field and for a virtual wedge. These profiles have also been compared with radiographic film measurements. All the comparisons show a good correspondence. The device has proved its capability to verify on-line therapy beams with good spatial resolution and signal-to-noise ratio.

Development and operation of a pixel segmented liquid-filled linear array for radiotherapy quality assurance

International Nuclear Information System (INIS)

Pardo, J; Franco, L; Gomez, F; Iglesias, A; Pazos, A; Pena, J; Lobato, R; Mosquera, J; Pombar, M; Sendon, J

2005-01-01

A liquid isooctane (C 8 H 18 ) filled ionization linear array for radiotherapy quality assurance has been designed, built and tested. The detector consists of 128 pixels, each of them with an area of 1.7 mm x 1.7 mm and a gap of 0.5 mm. The small pixel size makes the detector ideal for high gradient beam profiles such as those present in intensity modulated radiation therapy (IMRT) and radiosurgery. As the read-out electronics we use the X-ray Data Acquisition System with the Xchip developed by the CCLRC. Studies concerning the collection efficiency dependence on the polarization voltage and on the dose rate have been made in order to optimize the device operation. In the first tests, we have studied dose rate and energy dependences. Dose rate dependence was found to be lower than 2.1% up to 5 Gy min -1 , and energy dependence lower than 2.5% up to 20 cm depth in solid water. Output factors and penumbras for several rectangular fields have been measured with the linear array and were compared with the results obtained with a 0.125 cm 3 air ionization chamber and radiographic film, respectively. Finally, we have acquired profiles for an IMRT field and for a virtual wedge. These profiles have also been compared with radiographic film measurements. All the comparisons show a good correspondence. The device has proved its capability to verify on-line therapy beams with good spatial resolution and signal-to-noise ratio

Performance of an Axisymmetric Rocket Based Combined Cycle Engine During Rocket Only Operation Using Linear Regression Analysis

Science.gov (United States)

Smith, Timothy D.; Steffen, Christopher J., Jr.; Yungster, Shaye; Keller, Dennis J.

1998-01-01

The all rocket mode of operation is shown to be a critical factor in the overall performance of a rocket based combined cycle (RBCC) vehicle. An axisymmetric RBCC engine was used to determine specific impulse efficiency values based upon both full flow and gas generator configurations. Design of experiments methodology was used to construct a test matrix and multiple linear regression analysis was used to build parametric models. The main parameters investigated in this study were: rocket chamber pressure, rocket exit area ratio, injected secondary flow, mixer-ejector inlet area, mixer-ejector area ratio, and mixer-ejector length-to-inlet diameter ratio. A perfect gas computational fluid dynamics analysis, using both the Spalart-Allmaras and k-omega turbulence models, was performed with the NPARC code to obtain values of vacuum specific impulse. Results from the multiple linear regression analysis showed that for both the full flow and gas generator configurations increasing mixer-ejector area ratio and rocket area ratio increase performance, while increasing mixer-ejector inlet area ratio and mixer-ejector length-to-diameter ratio decrease performance. Increasing injected secondary flow increased performance for the gas generator analysis, but was not statistically significant for the full flow analysis. Chamber pressure was found to be not statistically significant.

Exact solution of a key equation in a finite stellar atmosphere by the method of Laplace transform and linear singular operators

International Nuclear Information System (INIS)

Das, R.N.

1980-01-01

The key equation which commonly appears for radiative transfer in a finite stellar atmosphere having ground reflection according to Lambert's law is considered in this paper. The exact solution of this equation is obtained for surface quantities in terms of the X-Y equations of Chandrasekhar by the method of Laplace transform and linear singular operators. This exact method is widely applicable for obtaining the solution for surface quantities in a finite atmosphere. (orig.)

Applied linear algebra and matrix analysis

CERN Document Server

Shores, Thomas S

2018-01-01

In its second edition, this textbook offers a fresh approach to matrix and linear algebra. Its blend of theory, computational exercises, and analytical writing projects is designed to highlight the interplay between these aspects of an application. This approach places special emphasis on linear algebra as an experimental science that provides tools for solving concrete problems. The second edition’s revised text discusses applications of linear algebra like graph theory and network modeling methods used in Google’s PageRank algorithm. Other new materials include modeling examples of diffusive processes, linear programming, image processing, digital signal processing, and Fourier analysis. These topics are woven into the core material of Gaussian elimination and other matrix operations; eigenvalues, eigenvectors, and discrete dynamical systems; and the geometrical aspects of vector spaces. Intended for a one-semester undergraduate course without a strict calculus prerequisite, Applied Linear Algebra and M...

Palladium Gate All Around - Hetero Dielectric -Tunnel FET based highly sensitive Hydrogen Gas Sensor

Science.gov (United States)

Madan, Jaya; Chaujar, Rishu

2016-12-01

The paper presents a novel highly sensitive Hetero-Dielectric-Gate All Around Tunneling FET (HD-GAA-TFET) based Hydrogen Gas Sensor, incorporating the advantages of band to band tunneling (BTBT) mechanism. Here, the Palladium supported silicon dioxide is used as a sensing media and sensing relies on the interaction of hydrogen with Palladium-SiO2-Si. The high surface to volume ratio in the case of cylindrical GAA structure enhances the fortuities for surface reactions between H2 gas and Pd, and thus improves the sensitivity and stability of the sensor. Behaviour of the sensor in presence of hydrogen and at elevated temperatures is discussed. The conduction path of the sensor which is dependent on sensors radius has also been varied for the optimized sensitivity and static performance analysis of the sensor where the proposed design exhibits a superior performance in terms of threshold voltage, subthreshold swing, and band to band tunneling rate. Stability of the sensor with respect to temperature affectability has also been studied, and it is found that the device is reasonably stable and highly sensitive over the bearable temperature range. The successful utilization of HD-GAA-TFET in gas sensors may open a new door for the development of novel nanostructure gas sensing devices.

A CMOS rail-to-rail linear VI-converter

NARCIS (Netherlands)

Vervoort, P.P.; Vervoort, P.P.; Wassenaar, R.F.

1995-01-01

A linear CMOS VI-converter operating in strong inversion with a common-mode input range from the negative to the positive supply rail is presented. The circuit consists of three linear VI-converters based on the difference of squares principle. Two of these perform the actual V to I conversion,

Linear accelerator for radioisotope production

International Nuclear Information System (INIS)

Hansborough, L.D.; Hamm, R.W.; Stovall, J.E.

1982-02-01

A 200- to 500-μA source of 70- to 90-MeV protons would be a valuable asset to the nuclear medicine program. A linear accelerator (linac) can achieve this performance, and it can be extended to even higher energies and currents. Variable energy and current options are available. A 70-MeV linac is described, based on recent innovations in linear accelerator technology; it would be 27.3 m long and cost approx. $6 million. By operating the radio-frequency (rf) power system at a level necessary to produce a 500-μA beam current, the cost of power deposited in the radioisotope-production target is comparable with existing cyclotrons. If the rf-power system is operated at full power, the same accelerator is capable of producing an 1140-μA beam, and the cost per beam watt on the target is less than half that of comparable cyclotrons

Linearizing of Low Noise Power Amplifier Using 5.8GHz Double Loop Feedforward Linearization Technique

Directory of Open Access Journals (Sweden)

Abdulkareem Mokif Obais

2017-05-01

Full Text Available In this paper, a double loop feedforward linearization technique is analyzed and built with a MMIC low noise amplifier “HMC753” as main amplifier and a two-stage class-A power amplifier as error amplifier. The system is operated with 5V DC supply at a center frequency of 5.8GHz and a bandwidth of 500MHz. The proposed technique, increases the linearity of the MMIC amplifier from 18dBm at 1dB compression point to more than 26dBm. In addition, the proposed system is tested with OFDM signal and it reveals good response in maximizing the linearity region and eliminating distortions. The proposed system is designed and simulated onAdvanced Wave Research-Microwave Office (AWR-MWO.

Scaling linear colliders to 5 TeV and above

International Nuclear Information System (INIS)

Wilson, P.B.

1997-04-01

Detailed designs exist at present for linear colliders in the 0.5-1.0 TeV center-of-mass energy range. For linear colliders driven by discrete rf sources (klystrons), the rf operating frequencies range from 1.3 GHz to 14 GHz, and the unloaded accelerating gradients from 21 MV/m to 100 MV/m. Except for the collider design at 1.3 GHz (TESLA) which uses superconducting accelerating structures, the accelerating gradients vary roughly linearly with the rf frequency. This correlation between gradient and frequency follows from the necessity to keep the ac open-quotes wall plugclose quotes power within reasonable bounds. For linear colliders at energies of 5 TeV and above, even higher accelerating gradients and rf operating frequencies will be required if both the total machine length and ac power are to be kept within reasonable limits. An rf system for a 5 TeV collider operating at 34 GHz is outlined, and it is shown that there are reasonable candidates for microwave tube sources which, together with rf pulse compression, are capable of supplying the required rf power. Some possibilities for a 15 TeV collider at 91 GHz are briefly discussed

Linear and integer programming made easy

CERN Document Server

Hu, T C

2016-01-01

Linear and integer programming are fundamental toolkits for data and information science and technology, particularly in the context of today’s megatrends toward statistical optimization, machine learning, and big data analytics. Drawn from over 30 years of classroom teaching and applied research experience, this textbook provides a crisp and practical introduction to the basics of linear and integer programming. The authors’ approach is accessible to students from all fields of engineering, including operations research, statistics, machine learning, control system design, scheduling, formal verification, and computer vision. Readers will learn to cast hard combinatorial problems as mathematical programming optimizations, understand how to achieve formulations where the objective and constraints are linear, choose appropriate solution methods, and interpret results appropriately. •Provides a concise introduction to linear and integer programming, appropriate for undergraduates, graduates, a short cours...

LINEAR2007, Linear-Linear Interpolation of ENDF Format Cross-Sections

International Nuclear Information System (INIS)

2007-01-01

1 - Description of program or function: LINEAR converts evaluated cross sections in the ENDF/B format into a tabular form that is subject to linear-linear interpolation in energy and cross section. The code also thins tables of cross sections already in that form. Codes used subsequently need thus to consider only linear-linear data. IAEA1311/15: This version include the updates up to January 30, 2007. Changes in ENDF/B-VII Format and procedures, as well as the evaluations themselves, make it impossible for versions of the ENDF/B pre-processing codes earlier than PREPRO 2007 (2007 Version) to accurately process current ENDF/B-VII evaluations. The present code can handle all existing ENDF/B-VI evaluations through release 8, which will be the last release of ENDF/B-VI. Modifications from previous versions: - Linear VERS. 2007-1 (JAN. 2007): checked against all ENDF/B-VII; increased page size from 60,000 to 600,000 points 2 - Method of solution: Each section of data is considered separately. Each section of File 3, 23, and 27 data consists of a table of cross section versus energy with any of five interpolation laws. LINEAR will replace each section with a new table of energy versus cross section data in which the interpolation law is always linear in energy and cross section. The histogram (constant cross section between two energies) interpolation law is converted to linear-linear by substituting two points for each initial point. The linear-linear is not altered. For the log-linear, linear-log and log- log laws, the cross section data are converted to linear by an interval halving algorithm. Each interval is divided in half until the value at the middle of the interval can be approximated by linear-linear interpolation to within a given accuracy. The LINEAR program uses a multipoint fractional error thinning algorithm to minimize the size of each cross section table

Non-linearity aspects in the design of submarine pipelines

NARCIS (Netherlands)

Fernández, M.L.

1981-01-01

An arbitrary attempt has been made to classify and discuss some non-linearity aspects related to design, construction and operation of submarine pipelines. Non-linearities usually interrelate and take part of a comprehensive design, making difficult to quantify their individual influence or

Linear engine development for series hybrid electric vehicles

Science.gov (United States)

Toth-Nagy, Csaba

This dissertation argues that diminishing oil reserves, concern over global climate change, and desire to improve ambient air quality all demand the development of environment-friendly personal transportation. In certain applications, series hybrid electric vehicles offer an attractive solution to reducing fuel consumption and emissions. Furthermore, linear engines are emerging as a powerplant suited to series HEV applications. In this dissertation, a linear engine/alternator was considered as the auxiliary power unit of a range extender series hybrid electric vehicle. A prototype linear engine/alternator was developed, constructed and tested at West Virginia University. The engine was a 2-stroke, 2-cylinder, dual piston, direct injection, diesel engine. Experiment on the engine was performed to study its behavior. The study variables included mass of the translator, amount of fuel injected, injection timing, load, and stroke with operating frequency and mechanical efficiency as the basis of comparison. The linear engine was analyzed in detail and a simple simulation model was constructed to compare the trends of simulation with the experimental data and to expand on the area where the experimental data were lacking. The simulation was based on a simple and analytical model, rather than a detailed and intensely numerical one. The experimental and theoretical data showed similar trends. Increasing translator mass decreased the operating frequency and increased compression ratio. Larger mass and increased compression ratio improved the ability of the engine to sustain operation and the engine was able to idle on less fuel injected into the cylinder. Increasing the stroke length caused the operating frequency to drop. Increasing fueling or decreasing the load resulted in increased operating frequency. This projects the possibility of using the operating frequency as an input for feedback control of the engine. Injection timing was varied to investigate two different