WorldWideScience

Sample records for linear mosfet array

  1. Evaluation of linear array MOSFET detectors for in vivo dosimetry to measure rectal dose in HDR brachytherapy.

    Science.gov (United States)

    Haughey, Aisling; Coalter, George; Mugabe, Koki

    2011-09-01

    The study aimed to assess the suitability of linear array metal oxide semiconductor field effect transistor detectors (MOSFETs) as in vivo dosimeters to measure rectal dose in high dose rate brachytherapy treatments. The MOSFET arrays were calibrated with an Ir192 source and phantom measurements were performed to check agreement with the treatment planning system. The angular dependence, linearity and constancy of the detectors were evaluated. For in vivo measurements two sites were investigated, transperineal needle implants for prostate cancer and Fletcher suites for cervical cancer. The MOSFETs were inserted into the patients' rectum in theatre inside a modified flatus tube. The patients were then CT scanned for treatment planning. Measured rectal doses during treatment were compared with point dose measurements predicted by the TPS. The MOSFETs were found to require individual calibration factors. The calibration was found to drift by approximately 1% ±0.8 per 500 mV accumulated and varies with distance from source due to energy dependence. In vivo results for prostate patients found only 33% of measured doses agreed with the TPS within ±10%. For cervix cases 42% of measured doses agreed with the TPS within ±10%, however of those not agreeing variations of up to 70% were observed. One of the most limiting factors in this study was found to be the inability to prevent the MOSFET moving internally between the time of CT and treatment. Due to the many uncertainties associated with MOSFETs including calibration drift, angular dependence and the inability to know their exact position at the time of treatment, we consider them to be unsuitable for in vivo dosimetry in rectum for HDR brachytherapy.

  2. Evaluation of linear array MOSFET detectors for in vivo dosimetry to measure rectal dose in DHR brachytherapy

    International Nuclear Information System (INIS)

    Haughey, A.; Coalter, G.; Mugabe, K.

    2011-01-01

    Full text: The study aimed to assess the suitability of linear array metal oxide semiconductor field effect transistor detectors (MOSFETs) as in vivo dosimeters to measure rectal dose in high dose rate brachytherapy treatments. The MOSFET arrays were calibrated with an Ir192 source and phantom measurements were performed to check agreement with the treatment planning system. The angular dependence, linearity and constancy of the detectors were evaluated. For in vivo measurements two sites were investigated, transperineal needle implants for prostate cancer and Fletcher suites for cervical cancer. The MOSFETs were inserted into the patients' rectum in theatre inside a modified flatus tube. The patients were then CT scanned for treatment planning. Measured rectal doses during treatment were compared with point dose measurements predicted by the TPS. The MOSFETs were found to require individual calibration factors. The calibration was found to drift by approximately 1% ±0.8 per 500 mV accumulated and varies with distance from source due to energy dependence. In vivo results for prostate patients found only 33% of measured doses agreed with the TPS within ±1O%. For cervix cases 42% of measured doses agreed with the TPS within ± 10%, however of those not agreeing variations of up to 70% were observed. One of the most limiting factors in this study was found to be the inability to prevent the MOSFET moving internally between the time of CT and treatment. Due to the many uncertainties associated with MOSFETs including calibration drift, angular dependence and the inability to know their exact position at the time of treatment, we consider them to be unsuitable for in vivo dosimetry in rectum for HDR brachytherapy. (author)

  3. In vivo dosimetry using a linear Mosfet-array dosimeter to determine the urethra dose in 125I permanent prostate implants.

    Science.gov (United States)

    Bloemen-van Gurp, Esther J; Murrer, Lars H P; Haanstra, Björk K C; van Gils, Francis C J M; Dekker, Andre L A J; Mijnheer, Ben J; Lambin, Philippe

    2009-01-01

    In vivo dosimetry during brachytherapy of the prostate with (125)I seeds is challenging because of the high dose gradients and low photon energies involved. We present the results of a study using metal-oxide-semiconductor field-effect transistor (MOSFET) dosimeters to evaluate the dose in the urethra after a permanent prostate implantation procedure. Phantom measurements were made to validate the measurement technique, determine the measurement accuracy, and define action levels for clinical measurements. Patient measurements were performed with a MOSFET array in the urinary catheter immediately after the implantation procedure. A CT scan was performed, and dose values, calculated by the treatment planning system, were compared to in vivo dose values measured with MOSFET dosimeters. Corrections for temperature dependence of the MOSFET array response and photon attenuation in the catheter on the in vivo dose values are necessary. The overall uncertainty in the measurement procedure, determined in a simulation experiment, is 8.0% (1 SD). In vivo dose values were obtained for 17 patients. In the high-dose region (> 100 Gy), calculated and measured dose values agreed within 1.7% +/- 10.7% (1 SD). In the low-dose region outside the prostate (MOSFET detectors are suitable for in vivo dosimetry during (125)I brachytherapy of prostate cancer. An action level of +/- 16% (2 SD) for detection of errors in the implantation procedure is achievable after validation of the detector system and measurement conditions.

  4. Materials preparation and fabrication of pyroelectric polymer/silicon MOSFET detector arrays. Final report

    International Nuclear Information System (INIS)

    Bloomfield, P.

    1992-01-01

    The authors have delivered several 64-element linear arrays of pyroelectric elements fully integrated on silicon wafers with MOS readout devices. They have delivered detailed drawings of the linear arrays to LANL. They have processed a series of two inch wafers per submitted design. Each two inch wafer contains two 64 element arrays. After spin-coating copolymer onto the arrays, vacuum depositing the top electrodes, and polarizing the copolymer films so as to make them pyroelectrically active, each wafer was split in half. The authors developed a thicker oxide coating separating the extended gate electrode (beneath the polymer detector) from the silicon. This should reduce its parasitic capacitance and hence improve the S/N. They provided LANL three processed 64 element sensor arrays. Each array was affixed to a connector panel and selected solder pads of the common ground, the common source voltage supply connections, the 64 individual drain connections, and the 64 drain connections (for direct pyroelectric sensing response rather than the MOSFET action) were wire bonded to the connector panel solder pads. This entails (64 + 64 + 1 + 1) = 130 possible bond connections per 64 element array. This report now details the processing steps and the progress of the individual wafers as they were carried through from beginning to end

  5. Performance of a thermal imager employing a hybrid pyroelectric detector array with MOSFET readout

    International Nuclear Information System (INIS)

    Watton, R.; Mansi, M.V.

    1988-01-01

    A thermal imager employing a two-dimensional hybrid array of pyroelectric detectors with MOSFET readout has been built. The design and theoretical performance of the detector are discussed, and the results of performance measurements are presented. 8 references

  6. Improved linear pyroelectric IR detector arrays

    International Nuclear Information System (INIS)

    Twiney, R.C.; Robinson, M.K.; Porter, S.G.

    1987-01-01

    Good agreement has been found between theoretical models and measured performance for a range of array geometries. A 64-element 80 x 140-micron element array with integral MOSFET IC buffer preamplifiers shows improved source voltage uniformity, a J-FET buffered array, and low-frequency specific detectivity (SD) of 1.7 x 10 to the 8th cm sq rt Hz/W at 40 Hz. The MOSFET array shows reduced degradation of SD at high temperatures, retaining an SD of not less than 1 x 10 to the 8th cm sq rt Hz/W at +70 C across much of the band. A 64-element array has been designed using onboard multiplexers, thus greatly reducing the connections needed to run the array

  7. ESPRIT And Uniform Linear Arrays

    Science.gov (United States)

    Roy, R. H.; Goldburg, M.; Ottersten, B. E.; Swindlehurst, A. L.; Viberg, M.; Kailath, T.

    1989-11-01

    Abstract ¬â€?ESPRIT is a recently developed and patented technique for high-resolution estimation of signal parameters. It exploits an invariance structure designed into the sensor array to achieve a reduction in computational requirements of many orders of magnitude over previous techniques such as MUSIC, Burg's MEM, and Capon's ML, and in addition achieves performance improvement as measured by parameter estimate error variance. It is also manifestly more robust with respect to sensor errors (e.g. gain, phase, and location errors) than other methods as well. Whereas ESPRIT only requires that the sensor array possess a single invariance best visualized by considering two identical but other-wise arbitrary arrays of sensors displaced (but not rotated) with respect to each other, many arrays currently in use in various applications are uniform linear arrays of identical sensor elements. Phased array radars are commonplace in high-resolution direction finding systems, and uniform tapped delay lines (i.e., constant rate A/D converters) are the rule rather than the exception in digital signal processing systems. Such arrays possess many invariances, and are amenable to other types of analysis, which is one of the main reasons such structures are so prevalent. Recent developments in high-resolution algorithms of the signal/noise subspace genre including total least squares (TLS) ESPRIT applied to uniform linear arrays are summarized. ESPRIT is also shown to be a generalization of the root-MUSIC algorithm (applicable only to the case of uniform linear arrays of omni-directional sensors and unimodular cisoids). Comparisons with various estimator bounds, including CramerRao bounds, are presented.

  8. Directivity of basic linear arrays

    DEFF Research Database (Denmark)

    Bach, Henning

    1970-01-01

    For a linear uniform array ofnelements, an expression is derived for the directivity as a function of the spacing and the phase constants. The cases of isotropic elements, collinear short dipoles, and parallel short dipoles are included. The formula obtained is discussed in some detail and contour...

  9. Direct protein detection with a nano-interdigitated array gate MOSFET.

    Science.gov (United States)

    Tang, Xiaohui; Jonas, Alain M; Nysten, Bernard; Demoustier-Champagne, Sophie; Blondeau, Franoise; Prévot, Pierre-Paul; Pampin, Rémi; Godfroid, Edmond; Iñiguez, Benjamin; Colinge, Jean-Pierre; Raskin, Jean-Pierre; Flandre, Denis; Bayot, Vincent

    2009-08-15

    A new protein sensor is demonstrated by replacing the gate of a metal oxide semiconductor field effect transistor (MOSFET) with a nano-interdigitated array (nIDA). The sensor is able to detect the binding reaction of a typical antibody Ixodes ricinus immunosuppressor (anti-Iris) protein at a concentration lower than 1 ng/ml. The sensor exhibits a high selectivity and reproducible specific detection. We provide a simple model that describes the behavior of the sensor and explains the origin of its high sensitivity. The simulated and experimental results indicate that the drain current of nIDA-gate MOSFET sensor is significantly increased with the successive binding of the thiol layer, Iris and anti-Iris protein layers. It is found that the sensor detection limit can be improved by well optimizing the geometrical parameters of nIDA-gate MOSFET. This nanobiosensor, with real-time and label-free capabilities, can easily be used for the detection of other proteins, DNA, virus and cancer markers. Moreover, an on-chip associated electronics nearby the sensor can be integrated since its fabrication is compatible with complementary metal oxide semiconductor (CMOS) technology.

  10. Power MOSFET Linearizer of a High-Voltage Power Amplifier for High-Frequency Pulse-Echo Instrumentation.

    Science.gov (United States)

    Choi, Hojong; Woo, Park Chul; Yeom, Jung-Yeol; Yoon, Changhan

    2017-04-04

    A power MOSFET linearizer is proposed for a high-voltage power amplifier (HVPA) used in high-frequency pulse-echo instrumentation. The power MOSFET linearizer is composed of a DC bias-controlled series power MOSFET shunt with parallel inductors and capacitors. The proposed scheme is designed to improve the gain deviation characteristics of the HVPA at higher input powers. By controlling the MOSFET bias voltage in the linearizer, the gain reduction into the HVPA was compensated, thereby reducing the echo harmonic distortion components generated by the ultrasonic transducers. In order to verify the performance improvement of the HVPA implementing the power MOSFET linearizer, we measured and found that the gain deviation of the power MOSFET linearizer integrated with HVPA under 10 V DC bias voltage was reduced (-1.8 and -0.96 dB, respectively) compared to that of the HVPA without the power MOSFET linearizer (-2.95 and -3.0 dB, respectively) when 70 and 80 MHz, three-cycle, and 26 dB m input pulse waveforms are applied, respectively. The input 1-dB compression point (an index of linearity) of the HVPA with power MOSFET linearizer (24.17 and 26.19 dB m at 70 and 80 MHz, respectively) at 10 V DC bias voltage was increased compared to that of HVPA without the power MOSFET linearizer (22.03 and 22.13 dB m at 70 and 80 MHz, respectively). To further verify the reduction of the echo harmonic distortion components generated by the ultrasonic transducers, the pulse-echo responses in the pulse-echo instrumentation were compared when using HVPA with and without the power MOSFET linearizer. When three-cycle 26 dB m input power was applied, the second, third, fourth, and fifth harmonic distortion components of a 75 MHz transducer driven by the HVPA with power MOSFET linearizer (-48.34, -44.21, -48.34, and -46.56 dB, respectively) were lower than that of the HVPA without the power MOSFET linearizer (-45.61, -41.57, -45.01, and -45.51 dB, respectively). When five-cycle 20 dB m input

  11. An adjustable linear Halbach array

    Energy Technology Data Exchange (ETDEWEB)

    Hilton, J.E., E-mail: James.Hilton@csiro.au [CSIRO Mathematics, Informatics and Statistics, Clayton South, VIC 3169 (Australia); McMurry, S.M. [School of Physics, Trinity College, Dublin (Ireland)

    2012-07-15

    The linear Halbach array is a well-known planar magnetic structure capable, in the idealized case, of generating a one-sided magnetic field. We show that such a field can be created from an array of uniformly magnetized rods, and rotating these rods in an alternating fashion can smoothly transfer the resultant magnetic field through the plane of the device. We examine an idealized model composed of infinite line dipoles and carry out computational simulations on a realizable device using a magnetic boundary element method. Such an arrangement can be used for an efficient latching device, or to produce a highly tunable field in the space above the device. - Highlights: Black-Right-Pointing-Pointer We model an adjustable 'one-sided' flux sheet made up of a series of dipolar magnetic field sources. Black-Right-Pointing-Pointer We show that magnetic field can be switched from one side of sheet to other by a swap rotation of each of magnetic sources. Black-Right-Pointing-Pointer Investigations show that such an arrangement is practical and can easily be fabricated. Black-Right-Pointing-Pointer The design has a wide range of potential applications.

  12. An adjustable linear Halbach array

    International Nuclear Information System (INIS)

    Hilton, J.E.; McMurry, S.M.

    2012-01-01

    The linear Halbach array is a well-known planar magnetic structure capable, in the idealized case, of generating a one-sided magnetic field. We show that such a field can be created from an array of uniformly magnetized rods, and rotating these rods in an alternating fashion can smoothly transfer the resultant magnetic field through the plane of the device. We examine an idealized model composed of infinite line dipoles and carry out computational simulations on a realizable device using a magnetic boundary element method. Such an arrangement can be used for an efficient latching device, or to produce a highly tunable field in the space above the device. - Highlights: ► We model an adjustable ‘one-sided’ flux sheet made up of a series of dipolar magnetic field sources. ► We show that magnetic field can be switched from one side of sheet to other by a swap rotation of each of magnetic sources. ► Investigations show that such an arrangement is practical and can easily be fabricated. ► The design has a wide range of potential applications.

  13. Statistical monitoring of linear antenna arrays

    KAUST Repository

    Harrou, Fouzi; Sun, Ying

    2016-01-01

    The paper concerns the problem of monitoring linear antenna arrays using the generalized likelihood ratio (GLR) test. When an abnormal event (fault) affects an array of antenna elements, the radiation pattern changes and significant deviation from

  14. Statistical monitoring of linear antenna arrays

    KAUST Repository

    Harrou, Fouzi

    2016-11-03

    The paper concerns the problem of monitoring linear antenna arrays using the generalized likelihood ratio (GLR) test. When an abnormal event (fault) affects an array of antenna elements, the radiation pattern changes and significant deviation from the desired design performance specifications can resulted. In this paper, the detection of faults is addressed from a statistical point of view as a fault detection problem. Specifically, a statistical method rested on the GLR principle is used to detect potential faults in linear arrays. To assess the strength of the GLR-based monitoring scheme, three case studies involving different types of faults were performed. Simulation results clearly shown the effectiveness of the GLR-based fault-detection method to monitor the performance of linear antenna arrays.

  15. A very-low-cost dosimeter based on the off-the-shelf CD4007 MOSFET array for in vivo radiotherapy applications

    International Nuclear Information System (INIS)

    Siebel, O.F.; Pereira, J.G.; Souza, R.S.; Ramirez-Fernandez, F.J.; Schneider, M.C.; Galup-Montoro, C.

    2015-01-01

    Purpose: This paper presents a low-cost MOSFET dosimeter suitable for in vivo radiotherapy applications. We analyze different methods to extract the threshold voltage and how this extraction is affected by the dose dependence of slope factor and carrier mobility. Also, we discuss fundamental aspects of the basic building blocks of a MOSFET dosimeter, namely, the radiation sensor, the reader circuit and temperature desensitization. Methods: Experiments with ionizing radiation (6 MV X-ray beams) were carried out at the Centro de Pesquisas Oncológicas (CEPON) using linear accelerators to test the MOSFET dosimeter. Results: The main performance parameters of the dosimeter prototype are radiation sensitivity about 100 mV/Gy (sensor's sensitivity is around 6.7 mV/Gy), thermal dependence of 0.5 cGy/°C, reproducibility is about 2.6%, and radiation beam attenuation of 0.14%. Conclusions: The MOSFET dosimeter described in this article, which combines a simple and accurate readout procedure with a small size, low-cost, cable/battery-free sensor and very little attenuation of the radiation beam is a very appealing option for in vivo dosimetry. - Highlights: • We present a low-cost, cable/battery-free MOSFET sensor for radiotherapy. • We analyze methods to extract the key MOSFET dosimetric parameter (V T ). • We discuss fundamental aspects of building blocks of a MOSFET dosimeter. • Reproducibility (2.6%) comparable to commercial MOSFET dosimeters (1.7%). • Similar responses to radiation with commercial TLDs (S.D. around 2%)

  16. Output-Conductance Transition-Free Method for Improving Radio-Frequency Linearity of SOI MOSFET Circuits

    Directory of Open Access Journals (Sweden)

    A. Daghighi

    2013-09-01

    Full Text Available In this article, a novel concept is introduced to improve the radio frequency (RF linearity of partially-depleted (PD silicon-on-insulator (SOI MOSFET circuits. The transition due to the non-zero body resistance (RBody in output conductance of PD SOI devices leads to linearity degradation. A relation for RBody is defined to eliminate the transition and a method to obtain transition-free circuit is shown. 3-D Simulations of various body-contacted devices are carried out to extract the transition-free body resistances. To identify the output conductance transition-free concept and its application to RF circuits, a 2.4 GHz low noise amplifier (LNA is analyzed. Mixed mode device-circuit analysis is carried out to simultaneously solve device transport equations and circuit spice models. FFT calculations are performed on the output signal to compute harmonic distortion figures. Comparing the conventional body-contacted and transition-free SOI LNAs, third harmonic distortion (HD3 and total harmonic distortion (THD are improved by 16% and 24%, respectively. Two-tone test is used to analyze third order intermodulation distortions. OIP3 is improved in transition-free SOI LNA by 17% comparing with the conventional body-contacted SOI LNA. These results show the possibility of application of transition-free design concept to improve linearity of RF SOI MOSFET circuits.

  17. Linear-array systems for aerospace NDE

    International Nuclear Information System (INIS)

    Smith, Robert A.; Willsher, Stephen J.; Bending, Jamie M.

    1999-01-01

    Rapid large-area inspection of composite structures for impact damage and multi-layered aluminum skins for corrosion has been a recognized priority for several years in both military and civil aerospace applications. Approaches to this requirement have followed two clearly different routes: the development of novel large-area inspection systems, and the enhancement of current ultrasonic or eddy-current methods to reduce inspection times. Ultrasonic inspection is possible with standard flaw detection equipment but the addition of a linear ultrasonic array could reduce inspection times considerably. In order to investigate their potential, 9-element and 17-element linear ultrasonic arrays for composites, and 64-element arrays for aluminum skins, have been developed to DERA specifications for use with the ANDSCAN area scanning system. A 5 m 2 composite wing surface has been scanned with a scan resolution of approximately 3 mm in 6 hours. With subsequent software and hardware improvements all four composite wing surfaces (top/bottom, left/right) of a military fighter aircraft can potentially be inspected in less than a day. Array technology has been very widely used in the medical ultrasound field although rarely above 10 MHz, whereas lap-joint inspection requires a pulse center-frequency of 12 to 20 MHz in order to resolve the separate interfaces in the lap joint. A 128 mm-long multi-element array of 5 mmx2 mm ultrasonic elements for use with the ANDSCAN scanning software was produced to a DERA specification by an NDT manufacturer with experience in the medical imaging field. This paper analyses the performance of the transducers that have been produced and evaluates their use in scanning systems of different configurations

  18. Linearly tapered slot antenna circular array for mobile communications

    Science.gov (United States)

    Simons, Rainee N.; Kelly, Eron; Lee, Richard Q.; Taub, Susan R.

    1993-01-01

    The design, fabrication and testing of a conformal K-band circular array is presented. The array consists of sixteen linearly tapered slot antennas (LTSA). It is fed by a 1:16 microstrip line power splitter via electromagnetic coupling. The array has an omni-directional pattern in the azimuth plane. In the elevation plane the beam is displaced above the horizon.

  19. Linear Array Ultrasonic Transducers: Sensitivity and Resolution Study

    International Nuclear Information System (INIS)

    Kramb, V.A.

    2005-01-01

    The University of Dayton Research Institute (UDRI) under contract by the US Air Force has designed and integrated a fully automated inspection system for the inspection of turbine engines that incorporates linear phased array ultrasonic transducers. Phased array transducers have been successfully implemented into weld and turbine blade root inspections where the defect types are well known and characterized. Embedded defects in aerospace turbine engine components are less well defined, however. In order to determine the applicability of linear arrays to aerospace inspections the sensitivity of array transducers to embedded defects in engine materials must be characterized. In addition, the implementation of array transducers into legacy inspection procedures must take into account any differences in sensitivity between the array transducer and that of the single element transducer currently used. This paper discusses preliminary results in a study that compares the sensitivity of linear array and conventional single element transducers to synthetic hard alpha defects in a titanium alloy

  20. Displacement measurement system for linear array detector

    International Nuclear Information System (INIS)

    Zhang Pengchong; Chen Ziyu; Shen Ji

    2011-01-01

    It presents a set of linear displacement measurement system based on encoder. The system includes displacement encoders, optical lens and read out circuit. Displacement read out unit includes linear CCD and its drive circuit, two amplifier circuits, second order Butterworth low-pass filter and the binarization circuit. The coding way is introduced, and various parts of the experimental signal waveforms are given, and finally a linear experimental test results are given. The experimental results are satisfactory. (authors)

  1. A novel method to design sparse linear arrays for ultrasonic phased array.

    Science.gov (United States)

    Yang, Ping; Chen, Bin; Shi, Ke-Ren

    2006-12-22

    In ultrasonic phased array testing, a sparse array can increase the resolution by enlarging the aperture without adding system complexity. Designing a sparse array involves choosing the best or a better configuration from a large number of candidate arrays. We firstly designed sparse arrays by using a genetic algorithm, but found that the arrays have poor performance and poor consistency. So, a method based on the Minimum Redundancy Linear Array was then adopted. Some elements are determined by the minimum-redundancy array firstly in order to ensure spatial resolution and then a genetic algorithm is used to optimize the remaining elements. Sparse arrays designed by this method have much better performance and consistency compared to the arrays designed only by a genetic algorithm. Both simulation and experiment confirm the effectiveness.

  2. Determination of wave direction from linear and polygonal arrays

    Digital Repository Service at National Institute of Oceanography (India)

    Fernandes, A.A; Gouveia, A; Nagarajan, R.

    documentation of Borgman (1974) in case of linear arrays; and the second issue being the failure of Esteva (1976, 1977) to correctly determine wave directions over the design range 25 to 7 sec of his polygonal array. This paper presents requisite documentation...

  3. Multispectral linear array (MLA) focal plane mechanical and thermal design

    Science.gov (United States)

    Mitchell, A. S.; Kaminski, E. F.

    1982-01-01

    The mechanical and thermal design of an integrated focal plane subsystem of a Multispectral Linear Array (MLA) instrument is discussed in terms of focal-plane alignment, thermoelastic performance, and thermal requirements. The modular construction and thermal control of the focal plane array are discussed.

  4. Fiber optic spectrophotometer with photodiode linear array

    International Nuclear Information System (INIS)

    Blanc, F.; Vernet, P.

    1988-01-01

    Spectrophotometric measurements are used in a great number of industrial processes, in nuclear environment and with optical precision components. Especially the evolution of a chemical process or of an optical coating could be followed by these measurements. Spectrophotometers, using optical fibers to transport the signal out of the instrument make possible the measurement ''in-situ'' and in real time. The advantage of using a diode array to detect the signal is an instantaneous measurement all over the spectral range without moving parts. It allows an excellent reproductibility. The instrument is controlled by a micro computer. The spectrophotometer is described and technical performance presented. An extension using optical fibers on a ''classical'' spectrophotometer (a H.P. one) is also described and technical performance presented

  5. Linear complexity for multidimensional arrays - a numerical invariant

    DEFF Research Database (Denmark)

    Gomez-Perez, Domingo; Høholdt, Tom; Moreno, Oscar

    2015-01-01

    Linear complexity is a measure of how complex a one dimensional sequence can be. In this paper we extend the concept of linear complexity to multiple dimensions and present a definition that is invariant under well-orderings of the arrays. As a result we find that our new definition for the proce...

  6. Characterization of Kerfless Linear Arrays Based on PZT Thick Film.

    Science.gov (United States)

    Zawada, Tomasz; Bierregaard, Louise Moller; Ringgaard, Erling; Xu, Ruichao; Guizzetti, Michele; Levassort, Franck; Certon, Dominique

    2017-09-01

    Multielement transducers enabling novel cost-effective fabrication of imaging arrays for medical applications have been presented earlier. Due to the favorable low lateral coupling of the screen-printed PZT, the elements can be defined by the top electrode pattern only, leading to a kerfless design with low crosstalk between the elements. The thick-film-based linear arrays have proved to be compatible with a commercial ultrasonic scanner and to support linear array beamforming as well as phased array beamforming. The main objective of the presented work is to investigate the performance of the devices at the transducer level by extensive measurements of the test structures. The arrays have been characterized by several different measurement techniques. First, electrical impedance measurements on several elements in air and liquid have been conducted in order to support material parameter identification using the Krimholtz-Leedom-Matthaei model. It has been found that electromechanical coupling is at the level of 35%. The arrays have also been characterized by a pulse-echo system. The measured sensitivity is around -60 dB, and the fractional bandwidth is close to 60%, while the center frequency is about 12 MHz over the whole array. Finally, laser interferometry measurements have been conducted indicating very good displacement level as well as pressure. The in-depth characterization of the array structure has given insight into the performance parameters for the array based on PZT thick film, and the obtained information will be used to optimize the key parameters for the next generation of cost-effective arrays based on piezoelectric thick film.

  7. Electromagnetic linear machines with dual Halbach array design and analysis

    CERN Document Server

    Yan, Liang; Peng, Juanjuan; Zhang, Lei; Jiao, Zongxia

    2017-01-01

    This book extends the conventional two-dimensional (2D) magnet arrangement into 3D pattern for permanent magnet linear machines for the first time, and proposes a novel dual Halbach array. It can not only effectively increase the radial component of magnetic flux density and output force of tubular linear machines, but also significantly reduce the axial flux density, radial force and thus system vibrations and noises. The book is also the first to address the fundamentals and provide a summary of conventional arrays, as well as novel concepts for PM pole design in electric linear machines. It covers theoretical study, numerical simulation, design optimization and experimental works systematically. The design concept and analytical approaches can be implemented to other linear and rotary machines with similar structures. The book will be of interest to academics, researchers, R&D engineers and graduate students in electronic engineering and mechanical engineering who wish to learn the core principles, met...

  8. Design and Analysis of MEMS Linear Phased Array

    Directory of Open Access Journals (Sweden)

    Guoxiang Fan

    2016-01-01

    Full Text Available A structure of micro-electro-mechanical system (MEMS linear phased array based on “multi-cell” element is designed to increase radiation sound pressure of transducer working in bending vibration mode at high frequency. In order to more accurately predict the resonant frequency of an element, the theoretical analysis of the dynamic equation of a fixed rectangular composite plate and finite element method simulation are adopted. The effects of the parameters both in the lateral and elevation direction on the three-dimensional beam directivity characteristics are comprehensively analyzed. The key parameters in the analysis include the “cell” number of element, “cell” size, “inter-cell” spacing and the number of elements, element width. The simulation results show that optimizing the linear array parameters both in the lateral and elevation direction can greatly improve the three-dimensional beam focusing for MEMS linear phased array, which is obviously different from the traditional linear array.

  9. Penalized Estimation in Large-Scale Generalized Linear Array Models

    DEFF Research Database (Denmark)

    Lund, Adam; Vincent, Martin; Hansen, Niels Richard

    2017-01-01

    Large-scale generalized linear array models (GLAMs) can be challenging to fit. Computation and storage of its tensor product design matrix can be impossible due to time and memory constraints, and previously considered design matrix free algorithms do not scale well with the dimension...

  10. Position sensor for linear synchronous motors employing halbach arrays

    Science.gov (United States)

    Post, Richard Freeman

    2014-12-23

    A position sensor suitable for use in linear synchronous motor (LSM) drive systems employing Halbach arrays to create their magnetic fields is described. The system has several advantages over previously employed ones, especially in its simplicity and its freedom from being affected by weather conditions, accumulated dirt, or electrical interference from the LSM system itself.

  11. Very high frequency (beyond 100 MHz) PZT kerfless linear arrays.

    Science.gov (United States)

    Wu, Da-Wei; Zhou, Qifa; Geng, Xuecang; Liu, Chang-Geng; Djuth, Frank; Shung, K Kirk

    2009-10-01

    This paper presents the design, fabrication, and measurements of very high frequency kerfless linear arrays prepared from PZT film and PZT bulk material. A 12-microm PZT thick film fabricated from PZT-5H powder/solution composite and a piece of 15-microm PZT-5H sheet were used to fabricate 32-element kerfless high-frequency linear arrays with photolithography. The PZT thick film was prepared by spin-coating of PZT sol-gel composite solution. The thin PZT-5H sheet sample was prepared by lapping a PZT-5H ceramic with a precision lapping machine. The measured results of the 2 arrays were compared. The PZT film array had a center frequency of 120 MHz, a bandwidth of 60% with a parylene matching layer, and an insertion loss of 41 dB. The PZT ceramic sheet array was found to have a center frequency of 128 MHz with a poorer bandwidth (40% with a parylene matching layer) but a better sensitivity (28 dB insertion loss).

  12. Linear micromechanical stepping drive for pinhole array positioning

    International Nuclear Information System (INIS)

    Endrödy, Csaba; Mehner, Hannes; Hoffmann, Martin; Grewe, Adrian

    2015-01-01

    A compact linear micromechanical stepping drive for positioning a 7 × 5.5 mm 2 optical pinhole array is presented. The system features a step size of 13.2 µm and a full displacement range of 200 µm. The electrostatic inch-worm stepping mechanism shows a compact design capable of positioning a payload 50% of its own weight. The stepping drive movement, step sizes and position accuracy are characterized. The actuated pinhole array is integrated in a confocal chromatic hyperspectral imaging system, where coverage of the object plane, and therefore the useful picture data, can be multiplied by 14 in contrast to a non-actuated array. (paper)

  13. Sub-1-V-60 nm vertical body channel MOSFET-based six-transistor static random access memory array with wide noise margin and excellent power delay product and its optimization with the cell ratio on static random access memory cell

    Science.gov (United States)

    Ogasawara, Ryosuke; Endoh, Tetsuo

    2018-04-01

    In this study, with the aim to achieve a wide noise margin and an excellent power delay product (PDP), a vertical body channel (BC)-MOSFET-based six-transistor (6T) static random access memory (SRAM) array is evaluated by changing the number of pillars in each part of a SRAM cell, that is, by changing the cell ratio in the SRAM cell. This 60 nm vertical BC-MOSFET-based 6T SRAM array realizes 0.84 V operation under the best PDP and up to 31% improvement of PDP compared with the 6T SRAM array based on a 90 nm planar MOSFET whose gate length and channel width are the same as those of the 60 nm vertical BC-MOSFET. Additionally, the vertical BC-MOSFET-based 6T SRAM array achieves an 8.8% wider read static noise margin (RSNM), a 16% wider write margin (WM), and an 89% smaller leakage. Moreover, it is shown that changing the cell ratio brings larger improvements of RSNM, WM, and write time in the vertical BC-MOSFET-based 6T SRAM array.

  14. Spatial Signature Estimation with an Uncalibrated Uniform Linear Array

    Directory of Open Access Journals (Sweden)

    Xiang Cao

    2015-06-01

    Full Text Available In this paper, the problem of spatial signature estimation using a uniform linear array (ULA with unknown sensor gain and phase errors is considered. As is well known, the directions-of-arrival (DOAs can only be determined within an unknown rotational angle in this array model. However, the phase ambiguity has no impact on the identification of the spatial signature. Two auto-calibration methods are presented for spatial signature estimation. In our methods, the rotational DOAs and model error parameters are firstly obtained, and the spatial signature is subsequently calculated. The first method extracts two subarrays from the ULA to construct an estimator, and the elements of the array can be used several times in one subarray. The other fully exploits multiple invariances in the interior of the sensor array, and a multidimensional nonlinear problem is formulated. A Gauss–Newton iterative algorithm is applied for solving it. The first method can provide excellent initial inputs for the second one. The effectiveness of the proposed algorithms is demonstrated by several simulation results.

  15. Low-redundancy linear arrays in mirrored interferometric aperture synthesis.

    Science.gov (United States)

    Zhu, Dong; Hu, Fei; Wu, Liang; Li, Jun; Lang, Liang

    2016-01-15

    Mirrored interferometric aperture synthesis (MIAS) is a novel interferometry that can improve spatial resolution compared with that of conventional IAS. In one-dimensional (1-D) MIAS, antenna array with low redundancy has the potential to achieve a high spatial resolution. This Letter presents a technique for the direct construction of low-redundancy linear arrays (LRLAs) in MIAS and derives two regular analytical patterns that can yield various LRLAs in short computation time. Moreover, for a better estimation of the observed scene, a bi-measurement method is proposed to handle the rank defect associated with the transmatrix of those LRLAs. The results of imaging simulation demonstrate the effectiveness of the proposed method.

  16. Logical Qubit in a Linear Array of Semiconductor Quantum Dots

    Directory of Open Access Journals (Sweden)

    Cody Jones

    2018-06-01

    Full Text Available We design a logical qubit consisting of a linear array of quantum dots, we analyze error correction for this linear architecture, and we propose a sequence of experiments to demonstrate components of the logical qubit on near-term devices. To avoid the difficulty of fully controlling a two-dimensional array of dots, we adapt spin control and error correction to a one-dimensional line of silicon quantum dots. Control speed and efficiency are maintained via a scheme in which electron spin states are controlled globally using broadband microwave pulses for magnetic resonance, while two-qubit gates are provided by local electrical control of the exchange interaction between neighboring dots. Error correction with two-, three-, and four-qubit codes is adapted to a linear chain of qubits with nearest-neighbor gates. We estimate an error correction threshold of 10^{-4}. Furthermore, we describe a sequence of experiments to validate the methods on near-term devices starting from four coupled dots.

  17. The effect of ionizing radiation on analog characteristics of MOSFET

    International Nuclear Information System (INIS)

    Ren Diyuan; Yu Xuefeng; Lu Wu; Gao Wenyu; Fan Long; Zhang Guoqiang; Yan Rongliang

    1994-01-01

    The effects of 60 Co γ-ray on the linearity and output characteristics of MOSFETs were investigated. The relations of oxide-trapped charge and Si/SiO 2 interface state density to the decrease of mobility μ-bar and transconductance g m , and the shift of the output curves for both P-MOSFETs and N-MOSFETs were qualitatively described. It was shown that degradation of analog characteristics, for P-MOSFETs, resulted from both oxide-trapped charge and interface state, but the degradation for N-MOSFETs was mainly due to the increase of radiation induced Si-SiO 2 interface state density

  18. Wake Vortex Detection: Phased Microphone vs. Linear Infrasonic Array

    Science.gov (United States)

    Shams, Qamar A.; Zuckerwar, Allan J.; Sullivan, Nicholas T.; Knight, Howard K.

    2014-01-01

    infrasonic array at the Newport News-Williamsburg International Airport early in the year 2013. A pattern of pressure burst, high-coherence intervals, and diminishing-coherence intervals was observed for all takeoff and landing events without exception. The results of a phased microphone vs. linear infrasonic array comparison will be presented.

  19. A 128 pixel linear array for radiotherapy quality assurance

    Energy Technology Data Exchange (ETDEWEB)

    Franco, L. [Departmento de Fisica de Particulas, Facultade de Fisica, Universidade de Santiago, campus sur s/n, 15782 Santiago de Compostela (Spain); Gomez, F. [Departmento de Fisica de Particulas, Facultade de Fisica, Universidade de Santiago, campus sur s/n, 15782 Santiago de Compostela (Spain)]. E-mail: faustgr@usc.es; Iglesias, A. [Departmento de Fisica de Particulas, Facultade de Fisica, Universidade de Santiago, campus sur s/n, 15782 Santiago de Compostela (Spain); Lobato, R. [Hospital Clinico Universitario de Santiago, 15706 Santiago (Spain); Marin, J. [CIEMAT, Laboratorio de Electronica y Automatica, 28040 Madrid Spain (Spain); Mosquera, J. [Hospital Clinico Universitario de Santiago, 15706 Santiago (Spain); Pardo, J. [Departmento de Fisica de Particulas, Facultade de Fisica, Universidade de Santiago, campus sur s/n, 15782 Santiago de Compostela (Spain)]. E-mail: juanpm@usc.es; Pazos, A. [Departmento de Fisica de Particulas, Facultade de Fisica, Universidade de Santiago, campus sur s/n, 15782 Santiago de Compostela (Spain); Pena, J. [Departmento de Fisica de Particulas, Facultade de Fisica, Universidade de Santiago, campus sur s/n, 15782 Santiago de Compostela (Spain); Pombar, M. [Hospital Clinico Universitario de Santiago, 15706 Santiago (Spain); Rodriguez, A. [Departmento de Fisica de Particulas, Facultade de Fisica, Universidade de Santiago, campus sur s/n, 15782 Santiago de Compostela (Spain); Saavedra, D. [Universidade da Coruna, Dpto. de Enxeneria Industrial II, 15403 Ferrol Spain (Spain); Sendon, J. [Hospital Clinico Universitario de Santiago, 15706 Santiago (Spain); Yanez, A. [Universidade da Coruna, Dpto. de Enxeneria Industrial II, 15403 Ferrol Spain (Spain)

    2004-12-11

    New radiotherapy techniques require detectors able to verify and monitor the clinical beam with high spatial resolution and fast response. Room temperature organic liquid ionization detectors are becoming an alternative to standard air ionization chambers, due to their tissue equivalent behavior, their sensibility and small directional dependence. A liquid isooctane filled ionization linear array for radiotherapy quality assurance has been designed, built and tested. The detector consists of 128 pixels, each of them with an area of 1.7mmx1.7mm and a gap of 0.5mm. The small pixel size makes the detector ideal for high gradient beam profiles like those present in Intensity Modulated Radiation Therapy. The gap and the polarization voltage have been chosen in order to guarantee a linear relationship between the dose rate and the readout signal at high dose rates. As readout electronics we use the X-ray Data Acquisition System with the Xchip developed by the CCLRC.In the first device tests we have confirmed linearity up to a 6.7Gy/min dose rate with a deviation less than 1%. A profile with a signal-to-noise ratio around 500 can be obtained for a 4Gy/min dose rate with a 10 ms integration time.

  20. A 128 pixel linear array for radiotherapy quality assurance

    International Nuclear Information System (INIS)

    Franco, L.; Gomez, F.; Iglesias, A.; Lobato, R.; Marin, J.; Mosquera, J.; Pardo, J.; Pazos, A.; Pena, J.; Pombar, M.; Rodriguez, A.; Saavedra, D.; Sendon, J.; Yanez, A.

    2004-01-01

    New radiotherapy techniques require detectors able to verify and monitor the clinical beam with high spatial resolution and fast response. Room temperature organic liquid ionization detectors are becoming an alternative to standard air ionization chambers, due to their tissue equivalent behavior, their sensibility and small directional dependence. A liquid isooctane filled ionization linear array for radiotherapy quality assurance has been designed, built and tested. The detector consists of 128 pixels, each of them with an area of 1.7mmx1.7mm and a gap of 0.5mm. The small pixel size makes the detector ideal for high gradient beam profiles like those present in Intensity Modulated Radiation Therapy. The gap and the polarization voltage have been chosen in order to guarantee a linear relationship between the dose rate and the readout signal at high dose rates. As readout electronics we use the X-ray Data Acquisition System with the Xchip developed by the CCLRC.In the first device tests we have confirmed linearity up to a 6.7Gy/min dose rate with a deviation less than 1%. A profile with a signal-to-noise ratio around 500 can be obtained for a 4Gy/min dose rate with a 10 ms integration time

  1. Silicon Power MOSFETs

    Science.gov (United States)

    Lauenstein, Jean-Marie; Casey, Megan; Campola, Michael; Ladbury, Raymond; Label, Kenneth; Wilcox, Ted; Phan, Anthony; Kim, Hak; Topper, Alyson

    2017-01-01

    Recent work for the NASA Electronic Parts and Packaging Program Power MOSFET task is presented. The Task technology focus, roadmap, and partners are given. Recent single-event effect test results on commercial, automotive, and radiation hardened trench power MOSFETs are summarized with an emphasis on risk of using commercial and automotive trench-gate power MOSFETs in space applications.

  2. Improvement of Mosfet Characteristics

    OpenAIRE

    Ranbir Singh

    1990-01-01

    By inclusion of a semi-dielectric layer, a novel MOSFET Structure, the T-MOSFET, and its integrated circuit version are presented. Both for the enhancement mode and the depletion mode, equivalent circuit models are developed. Also, the high frequency behaviour is explained by a model and the behaviour of a T-MOSFET under different conditions is given.

  3. Specificity of the Linear Array HPV Genotyping Test for detecting human papillomavirus genotype 52 (HPV-52)

    OpenAIRE

    Kocjan, Boštjan; Poljak, Mario; Oštrbenk, Anja

    2015-01-01

    Introduction: HPV-52 is one of the most frequent human papillomavirus (HPV) genotypes causing significant cervical pathology. The most widely used HPV genotyping assay, the Roche Linear Array HPV Genotyping Test (Linear Array), is unable to identify HPV- 52 status in samples containing HPV-33, HPV-35, and/or HPV-58. Methods: Linear Array HPV-52 analytical specificity was established by testing 100 specimens reactive with the Linear Array HPV- 33/35/52/58 cross-reactive probe, but not with the...

  4. Comparison of heating deposition patterns for stacked linear phased array and fixed focus ultrasonic hyperthermia applicators

    International Nuclear Information System (INIS)

    Ocheltree, K.B.; Benkeser, P.J.; Frizzell, L.A.; Cain, C.A.

    1985-01-01

    An ultrasonic stacked linear phased array applicator for hyperthermia has been designed to heat tumors at depths from 5 to 10 cm. The power deposition pattern for this applicator is compared to that for a fixed focus applicator for several different scan paths. The power deposition pattern for the stacked linear phased array shows hot spots that are not observed for the mechanically scanned fixed focus applicator. These hot spots are related to the skewed power deposition pattern resulting from scanning the focus off the center of the linear arrays. The overall performance of the stacked linear phased array applicator is compared to that of a fixed focus applicator

  5. Clinical dosimetry using mosfets

    International Nuclear Information System (INIS)

    Ramani, Ramaseshan; Russell, Stephen; O'Brien, Peter

    1997-01-01

    Purpose: The use of metal oxide-silicon field effect transistors (MOSFETs) as clinical dosimeters is demonstrated for a number of patients with targets at different clinical sites. Methods and Materials: Commercially available MOSFETs were characterized for energy response, angular dependency of response, and effect of accumulated dose on sensitivity and some inherent properties of MOSFETs. The doses determined both by thermoluminescence dosimetry (TLD) and MOSFETs in clinical situation were evaluated and compared to expected doses determined by calculation. Results: It was observed that a standard calibration of 0.01 Gy/mV gave MOSFET determined doses which agreed with expected doses to within 5% at the 95% confidence limit for photon beams from 6 to 25 MV and electron beams from 5 to 14 MeV. An energy-dependent variation in response of up to 28% was observed between two orientations of a MOSFET. The MOSFET doses compared very well with the doses estimated by TLDs, and the patients tolerated MOSFETs very well. A standard deviation of 3.9% between expected dose and MOSFET determined dose was observed, while for TLDs the standard deviation was 5.1%. The advantages and disadvantages of using MOSFETs for clinical dosimetry are discussed in detail. Conclusion: It was concluded that MOSFETs can be used as clinical dosimeters and can be a good alternative to TLDs. However, they have limitations under certain clinical situations

  6. Enhanced linear-array photoacoustic beamforming using modified coherence factor.

    Science.gov (United States)

    Mozaffarzadeh, Moein; Yan, Yan; Mehrmohammadi, Mohammad; Makkiabadi, Bahador

    2018-02-01

    Photoacoustic imaging (PAI) is a promising medical imaging modality providing the spatial resolution of ultrasound imaging and the contrast of optical imaging. For linear-array PAI, a beamformer can be used as the reconstruction algorithm. Delay-and-sum (DAS) is the most prevalent beamforming algorithm in PAI. However, using DAS beamformer leads to low-resolution images as well as high sidelobes due to nondesired contribution of off-axis signals. Coherence factor (CF) is a weighting method in which each pixel of the reconstructed image is weighted, based on the spatial spectrum of the aperture, to mainly improve the contrast. We demonstrate that the numerator of the formula of CF contains a DAS algebra and propose the use of a delay-multiply-and-sum beamformer instead of the available DAS on the numerator. The proposed weighting technique, modified CF (MCF), has been evaluated numerically and experimentally compared to CF. It was shown that MCF leads to lower sidelobes and better detectable targets. The quantitative results of the experiment (using wire targets) show that MCF leads to for about 45% and 40% improvement, in comparison with CF, in the terms of signal-to-noise ratio and full-width-half-maximum, respectively. (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE).

  7. Enhanced linear-array photoacoustic beamforming using modified coherence factor

    Science.gov (United States)

    Mozaffarzadeh, Moein; Yan, Yan; Mehrmohammadi, Mohammad; Makkiabadi, Bahador

    2018-02-01

    Photoacoustic imaging (PAI) is a promising medical imaging modality providing the spatial resolution of ultrasound imaging and the contrast of optical imaging. For linear-array PAI, a beamformer can be used as the reconstruction algorithm. Delay-and-sum (DAS) is the most prevalent beamforming algorithm in PAI. However, using DAS beamformer leads to low-resolution images as well as high sidelobes due to nondesired contribution of off-axis signals. Coherence factor (CF) is a weighting method in which each pixel of the reconstructed image is weighted, based on the spatial spectrum of the aperture, to mainly improve the contrast. We demonstrate that the numerator of the formula of CF contains a DAS algebra and propose the use of a delay-multiply-and-sum beamformer instead of the available DAS on the numerator. The proposed weighting technique, modified CF (MCF), has been evaluated numerically and experimentally compared to CF. It was shown that MCF leads to lower sidelobes and better detectable targets. The quantitative results of the experiment (using wire targets) show that MCF leads to for about 45% and 40% improvement, in comparison with CF, in the terms of signal-to-noise ratio and full-width-half-maximum, respectively.

  8. Dosimetric characteristics of a MOSFET dosimeter for clinical electron beams.

    Science.gov (United States)

    Manigandan, D; Bharanidharan, G; Aruna, P; Devan, K; Elangovan, D; Patil, Vikram; Tamilarasan, R; Vasanthan, S; Ganesan, S

    2009-09-01

    The fundamental dosimetric characteristics of commercially available metal oxide semiconductor field effect transistor (MOSFET) detectors were studied for clinical electron beam irradiations. MOSFET showed excellent linearity against doses measured using an ion chamber in the dose range of 20-630cGy. MOSFET reproducibility is better at high doses compared to low doses. The output factors measured with the MOSFET were within +/-3% when compared with those measured with a parallel plate chamber. From 4 to 12MeV, MOSFETs showed a large angular dependence in the tilt directions and less in the axial directions. MOSFETs do not show any dose-rate dependence between 100 and 600MU/min. However, MOSFETs have shown under-response when the dose per pulse of the beam is decreased. No measurable effect in MOSFET response was observed in the temperature range of 23-40 degrees C. The energy dependence of a MOSFET dosimeter was within +/-3.0% for 6-18MeV electron beams and 5.5% for 4MeV ones. This study shows that MOSFET detectors are suitable for dosimetry of electron beams in the energy range of 4-18MeV.

  9. Comparison of Thrust Characteristics in Pencil Sized Cylinder-type Linear Motors with Different Magnet Arrays

    OpenAIRE

    Nakaiwa, K; Yamada, A; Tashiro, K; Wakiwaka, H

    2009-01-01

    From a strong demand on the miniaturization of a chip mounter or a semiconductor device, the thrust improvement considering the magnets arrangement is studied. We accept a core stator with a Halbach type magnet array for a current linear motor. The thrust characteristics are compared with two kinds of mover, a NS magnet array and a Halbach magnet array.

  10. Optimal array factor radiation pattern synthesis for linear antenna array using cat swarm optimization: validation by an electromagnetic simulator

    Institute of Scientific and Technical Information of China (English)

    Gopi RAM; Durbadal MANDAL; Sakti Prasad GHOSHAL; Rajib KAR

    2017-01-01

    In this paper, an optimal design of linear antenna arrays having microstrip patch antenna elements has been carried out. Cat swarm optimization (CSO) has been applied for the optimization of the control parameters of radiation pattern of an antenna array. The optimal radiation patterns of isotropic antenna elements are obtained by optimizing the current excitation weight of each element and the inter-element spacing. The antenna arrays of 12, 16, and 20 elements are taken as examples. The arrays are de-signed by using MATLAB computation and are validated through Computer Simulation Technology-Microwave Studio (CST-MWS). From the simulation results it is evident that CSO is able to yield the optimal design of linear antenna arrays of patch antenna elements.

  11. Experimental evaluation of a MOSFET dosimeter for proton dose measurements

    International Nuclear Information System (INIS)

    Kohno, Ryosuke; Nishio, Teiji; Miyagishi, Tomoko; Hirano, Eriko; Hotta, Kenji; Kawashima, Mitsuhiko; Ogino, Takashi

    2006-01-01

    The metal oxide semiconductor field-effect transistor (MOSFET) dosimeter has been widely studied for use as a dosimeter for patient dose verification. The major advantage of this detector is its size, which acts as a point dosimeter, and also its ease of use. The commercially available TN502RD MOSFET dosimeter manufactured by Thomson and Nielsen has never been used for proton dosimetry. Therefore we used the MOSFET dosimeter for the first time in proton dose measurements. In this study, the MOSFET dosimeter was irradiated with 190 MeV therapeutic proton beams. We experimentally evaluated dose reproducibility, linearity, fading effect, beam intensity dependence and angular dependence for the proton beam. Furthermore, the Bragg curve and spread-out Bragg peak were also measured and the linear-energy transfer (LET) dependence of the MOSFET response was investigated. Many characteristics of the MOSFET response for proton beams were the same as those for photon beams reported in previous papers. However, the angular MOSFET responses at 45, 90, 135, 225, 270 and 315 degrees for proton beams were over-responses of about 15%, and moreover the MOSFET response depended strongly on the LET of the proton beam. This study showed that the angular dependence and LET dependence of the MOSFET response must be considered very carefully for quantitative proton dose evaluations

  12. Active cancellation of probing in linear dipole phased array

    CERN Document Server

    Singh, Hema; Jha, Rakesh Mohan

    2015-01-01

    In this book, a modified improved LMS algorithm is employed for weight adaptation of dipole array for the generation of beam pattern in multiple signal environments. In phased arrays, the generation of adapted pattern according to the signal scenario requires an efficient adaptive algorithm. The antenna array is expected to maintain sufficient gain towards each of the desired source while at the same time suppress the probing sources. This cancels the signal transmission towards each of the hostile probing sources leading to active cancellation. In the book, the performance of dipole phased array is demonstrated in terms of fast convergence, output noise power and output signal-to-interference-and noise ratio. The mutual coupling effect and role of edge elements are taken into account. It is established that dipole array along with an efficient algorithm is able to maintain multilobe beamforming with accurate and deep nulls towards each probing source. This work has application to the active radar cross secti...

  13. Assessment of the Roche Linear Array HPV Genotyping Test within the VALGENT framework.

    Science.gov (United States)

    Xu, Lan; Oštrbenk, Anja; Poljak, Mario; Arbyn, Marc

    2018-01-01

    Cervical cancer screening programs are switching from cytology-based screening to high-risk (hr) HPV testing. Only clinically validated tests should be used in clinical practice. To assess the clinical performance of the Roche Linear Array HPV genotyping test (Linear Array) within the VALGENT-3 framework. The VALGENT framework is designed for comprehensive comparison and clinical validation of HPV tests that have limited to extended genotyping capacity. The Linear Array enables type-specific detection of 37 HPV types. For the purpose of this study, Linear Array results were designated as positive only if one of the 13 hrHPV types also included in the Hybrid Capture 2 (HC2) was detected. The VALGENT-3 framework comprised 1600 samples obtained from Slovenian women (1300 sequential cases from routine cervical cancer screening enriched with 300 cytological abnormal samples). Sensitivity for cervical intraepithelial neoplasia of grade 2 or worse (CIN2+) (n=127) and specificity for Linear Array and for HC2 and non-inferiority of Linear Array relative to HC2 was checked. In addition, the prevalence of separate hrHPV types in the screening population, as well as the concordance for presence of HPV16, HPV18 and other hrHPV types between Linear Array and the Abbott RealTime High Risk HPV test (RealTime) were assessed. The clinical sensitivity and specificity for CIN2+ of the Linear Array in the total study population was 97.6% (95% CI, 93.3-99.5%) and 91.7% (95% CI, 90.0-93.2%), respectively. The relative sensitivity and specificity of Linear Array vs HC2 was 1.02 [95% CI, 0.98-1.05, (pLinear Array in the screening population was 10.5% (95% CI, 8.9-12.3%) with HPV16 and HPV18 detected in 2.3% and 0.9% of the samples, respectively. Excellent agreement for presence or absence of HPV16, HPV18 and other hrHPV between Linear Array and RealTime was observed. Linear Array showed similar sensitivity with higher specificity to detect CIN2+ compared to HC2. Detection of 13 hrHPV types

  14. In vivo proton dosimetry using a MOSFET detector in an anthropomorphic phantom with tissue inhomogeneity.

    Science.gov (United States)

    Kohno, Ryosuke; Hotta, Kenji; Matsubara, Kana; Nishioka, Shie; Matsuura, Taeko; Kawashima, Mitsuhiko

    2012-03-08

    When in vivo proton dosimetry is performed with a metal-oxide semiconductor field-effect transistor (MOSFET) detector, the response of the detector depends strongly on the linear energy transfer. The present study reports a practical method to correct the MOSFET response for linear energy transfer dependence by using a simplified Monte Carlo dose calculation method (SMC). A depth-output curve for a mono-energetic proton beam in polyethylene was measured with the MOSFET detector. This curve was used to calculate MOSFET output distributions with the SMC (SMC(MOSFET)). The SMC(MOSFET) output value at an arbitrary point was compared with the value obtained by the conventional SMC(PPIC), which calculates proton dose distributions by using the depth-dose curve determined by a parallel-plate ionization chamber (PPIC). The ratio of the two values was used to calculate the correction factor of the MOSFET response at an arbitrary point. The dose obtained by the MOSFET detector was determined from the product of the correction factor and the MOSFET raw dose. When in vivo proton dosimetry was performed with the MOSFET detector in an anthropomorphic phantom, the corrected MOSFET doses agreed with the SMC(PPIC) results within the measurement error. To our knowledge, this is the first report of successful in vivo proton dosimetry with a MOSFET detector.

  15. Submicron Silicon MOSFET

    Science.gov (United States)

    Daud, T.

    1986-01-01

    Process for making metal-oxide/semiconductor field-effect transistors (MOSFET's) results in gate-channel lengths of only few hundred angstroms about 100 times as small as state-of-the-art devices. Gates must be shortened to develop faster MOSFET's; proposed fabrication process used to study effects of size reduction in MOS devices and eventually to build practical threedimensional structures.

  16. MOSFET's for Cryogenic Amplifiers

    Science.gov (United States)

    Dehaye, R.; Ventrice, C. A.

    1987-01-01

    Study seeks ways to build transistors that function effectively at liquid-helium temperatures. Report discusses physics of metaloxide/semiconductor field-effect transistors (MOSFET's) and performances of these devices at cryogenic temperatures. MOSFET's useful in highly sensitive cryogenic preamplifiers for infrared astronomy.

  17. Finding Traps in Non-linear Spin Arrays

    OpenAIRE

    Wiesniak, Marcin; Markiewicz, Marcin

    2009-01-01

    Precise knowledge of the Hamiltonian of a system is a key to many of its applications. Tasks such state transfer or quantum computation have been well studied with a linear chain, but hardly with systems, which do not possess a linear structure. While this difference does not disturb the end-to-end dynamics of a single excitation, the evolution is significantly changed in other subspaces. Here we quantify the difference between a linear chain and a pseudo-chain, which have more than one spin ...

  18. Compression dynamics of quasi-spherical wire arrays with different linear mass profiles

    International Nuclear Information System (INIS)

    Mitrofanov, K. N.; Aleksandrov, V. V.; Gritsuk, A. N.; Grabovski, E. V.; Frolov, I. N.; Laukhin, Ya. N.; Oleinik, G. M.; Ol’khovskaya, O. G.

    2016-01-01

    Results of experimental studies of the implosion of quasi-spherical wire (or metalized fiber) arrays are presented. The goal of the experiments was to achieve synchronous three-dimensional compression of the plasma produced in different regions of a quasi-spherical array into its geometrical center. To search for optimal synchronization conditions, quasi-spherical arrays with different initial profiles of the linear mass were used. The following dependences of the linear mass on the poloidal angle were used: m_l(θ) ∝ sin"–"1θ and m_l(θ) ∝ sin"–"2θ. The compression dynamics of such arrays was compared with that of quasi-spherical arrays without linear mass profiling, m_l(θ) = const. To verify the experimental data, the spatiotemporal dynamics of plasma compression in quasi-spherical arrays was studied using various diagnostics. The experiments on three-dimensional implosion of quasi-spherical arrays made it possible to study how the frozen-in magnetic field of the discharge current penetrates into the array. By measuring the magnetic field in the plasma of a quasi-spherical array, information is obtained on the processes of plasma production and formation of plasma flows from the wire/fiber regions with and without an additionally deposited mass. It is found that penetration of the magnetic flux depends on the initial linear mass profile m_l(θ) of the quasi-spherical array. From space-resolved spectral measurements and frame imaging of plasma X-ray emission, information is obtained on the dimensions and shape of the X-ray source formed during the implosion of a quasi-spherical array. The intensity of this source is estimated and compared with that of the Z-pinch formed during the implosion of a cylindrical array.

  19. Pattern Synthesis of Dual-band Shared Aperture Interleaved Linear Antenna Arrays

    Directory of Open Access Journals (Sweden)

    H. Guo

    2014-09-01

    Full Text Available This paper presents an approach to improve the efficiency of an array aperture by interleaving two different arrays in the same aperture area. Two sub-arrays working at different frequencies are interleaved in the same linear aperture area. The available aperture area is efficiently used. The element positions of antenna array are optimized by using Invasive Weed Optimization (IWO to reduce the peak side lobe level (PSLL of the radiation pattern. To overcome the shortness of traditional methods which can only fulfill the design of shared aperture antenna array working at the same frequency, this method can achieve the design of dual-band antenna array with wide working frequency range. Simulation results show that the proposed method is feasible and efficient in the synthesis of dual-band shared aperture antenna array.

  20. RCS estimation of linear and planar dipole phased arrays approximate model

    CERN Document Server

    Singh, Hema; Jha, Rakesh Mohan

    2016-01-01

    In this book, the RCS of a parallel-fed linear and planar dipole array is derived using an approximate method. The signal propagation within the phased array system determines the radar cross section (RCS) of phased array. The reflection and transmission coefficients for a signal at different levels of the phased-in scattering array system depend on the impedance mismatch and the design parameters. Moreover the mutual coupling effect in between the antenna elements is an important factor. A phased array system comprises of radiating elements followed by phase shifters, couplers, and terminating load impedance. These components lead to respective impedances towards the incoming signal that travels through them before reaching receive port of the array system. In this book, the RCS is approximated in terms of array factor, neglecting the phase terms. The mutual coupling effect is taken into account. The dependence of the RCS pattern on the design parameters is analyzed. The approximate model is established as a...

  1. Study on effective MOSFET channel length extracted from gate capacitance

    Science.gov (United States)

    Tsuji, Katsuhiro; Terada, Kazuo; Fujisaka, Hisato

    2018-01-01

    The effective channel length (L GCM) of metal-oxide-semiconductor field-effect transistors (MOSFETs) is extracted from the gate capacitances of actual-size MOSFETs, which are measured by charge-injection-induced-error-free charge-based capacitance measurement (CIEF CBCM). To accurately evaluate the capacitances between the gate and the channel of test MOSFETs, the parasitic capacitances are removed by using test MOSFETs having various channel sizes and a source/drain reference device. A strong linear relationship between the gate-channel capacitance and the design channel length is obtained, from which L GCM is extracted. It is found that L GCM is slightly less than the effective channel length (L CRM) extracted from the measured MOSFET drain current. The reason for this is discussed, and it is found that the capacitance between the gate electrode and the source and drain regions affects this extraction.

  2. Voltage splay modes and enhanced phase locking in a modified linear Josephson array

    Science.gov (United States)

    Harris, E. B.; Garland, J. C.

    1997-02-01

    We analyze a modified linear Josephson-junction array in which additional unbiased junctions are used to greatly enhance phase locking. This geometry exhibits strong correlated behavior, with an external magnetic field tuning the voltage splay angle between adjacent Josephson oscillators. The array displays a coherent in-phase mode for f=, where f is the magnetic frustration, while for 0tolerant of critical current disorder approaching 100%. The stability of the array has also been studied by computing Floquet exponents. These exponents are found to be negative for all array lengths, with a 1/N2 dependence, N being the number of series-connected junctions.

  3. Characterization of commercial MOSFETS electron dosimetry

    International Nuclear Information System (INIS)

    Carvajal, M. A.; Simancas, F.; Guirado, D.; Banqueri, J.; Vilches, M.; Lallena, A. M.; Palma, A. J.

    2011-01-01

    In recent years there have been commercial dosimetry devices based on transistors Metal-Oxide-Semiconductor (MOSFET) having a number of advantages over traditional systems for dosimetry in medical applications. These include the portability of the sensor element and a reading process quick and relatively simple dose, linearity, and so on. The use of electron beams is important in modern radiotherapy include its use in intra-operative radiotherapy (RIO). This paper presents an initial characterization of different business models MOSFET, not specific for radiation detection, to demonstrate their potential as sensors for electron beam dosimetry. (Author)

  4. Micro-machined high-frequency (80 MHz) PZT thick film linear arrays.

    Science.gov (United States)

    Zhou, Qifa; Wu, Dawei; Liu, Changgeng; Zhu, Benpeng; Djuth, Frank; Shung, K

    2010-10-01

    This paper presents the development of a micromachined high-frequency linear array using PZT piezoelectric thick films. The linear array has 32 elements with an element width of 24 μm and an element length of 4 mm. Array elements were fabricated by deep reactive ion etching of PZT thick films, which were prepared from spin-coating of PZT sol-gel composite. Detailed fabrication processes, especially PZT thick film etching conditions and a novel transferring-and-etching method, are presented and discussed. Array designs were evaluated by simulation. Experimental measurements show that the array had a center frequency of 80 MHz and a fractional bandwidth (-6 dB) of 60%. An insertion loss of -41 dB and adjacent element crosstalk of -21 dB were found at the center frequency.

  5. Weighted thinned linear array design with the iterative FFT technique

    CSIR Research Space (South Africa)

    Du Plessis, WP

    2011-09-01

    Full Text Available techniques utilise simulated annealing [3]?[5], [10], mixed integer linear programming [7], genetic algorithms [9], and a hyrid approach combining a genetic algorithm and a local optimiser [8]. The iterative Fourier technique (IFT) developed by Keizer [2... algorithm being well- suited to obtaining low CTRs. Test problems from the literature are considered, and the results obtained with the IFT considerably exceed those achieved with other algorithms. II. DESCRIPTION OF THE ALGORITHM A flowchart describing...

  6. Prognostics of Power MOSFET

    Data.gov (United States)

    National Aeronautics and Space Administration — This paper demonstrates how to apply prognostics to power MOSFETs (metal oxide field effect transistor). The methodology uses thermal cycling to age devices and...

  7. Isotropic-resolution linear-array-based photoacoustic computed tomography through inverse Radon transform

    Science.gov (United States)

    Li, Guo; Xia, Jun; Li, Lei; Wang, Lidai; Wang, Lihong V.

    2015-03-01

    Linear transducer arrays are readily available for ultrasonic detection in photoacoustic computed tomography. They offer low cost, hand-held convenience, and conventional ultrasonic imaging. However, the elevational resolution of linear transducer arrays, which is usually determined by the weak focus of the cylindrical acoustic lens, is about one order of magnitude worse than the in-plane axial and lateral spatial resolutions. Therefore, conventional linear scanning along the elevational direction cannot provide high-quality three-dimensional photoacoustic images due to the anisotropic spatial resolutions. Here we propose an innovative method to achieve isotropic resolutions for three-dimensional photoacoustic images through combined linear and rotational scanning. In each scan step, we first elevationally scan the linear transducer array, and then rotate the linear transducer array along its center in small steps, and scan again until 180 degrees have been covered. To reconstruct isotropic three-dimensional images from the multiple-directional scanning dataset, we use the standard inverse Radon transform originating from X-ray CT. We acquired a three-dimensional microsphere phantom image through the inverse Radon transform method and compared it with a single-elevational-scan three-dimensional image. The comparison shows that our method improves the elevational resolution by up to one order of magnitude, approaching the in-plane lateral-direction resolution. In vivo rat images were also acquired.

  8. 5G antenna array with wide-angle beam steering and dual linear polarizations

    KAUST Repository

    Klionovski, Kirill; Shamim, Atif; Sharawi, Mohammad Said

    2017-01-01

    In this paper, we present the design of a switched-beam antenna array at millimeter-wave frequencies for future 5G applications. The proposed antenna array is based on wideband patch antenna elements and a Butler matrix feed network. The patch antenna has a broad radiation pattern for wide-angle beam steering and allows the simultaneous operation with two orthogonal linear polarizations. A combination of two separated Butler matrices provides independent beam steering for both polarizations in the wide operating band. The antenna array has a simple multilayer construction, and it is made on a low-cost Rogers laminate.

  9. 5G antenna array with wide-angle beam steering and dual linear polarizations

    KAUST Repository

    Klionovski, Kirill

    2017-10-25

    In this paper, we present the design of a switched-beam antenna array at millimeter-wave frequencies for future 5G applications. The proposed antenna array is based on wideband patch antenna elements and a Butler matrix feed network. The patch antenna has a broad radiation pattern for wide-angle beam steering and allows the simultaneous operation with two orthogonal linear polarizations. A combination of two separated Butler matrices provides independent beam steering for both polarizations in the wide operating band. The antenna array has a simple multilayer construction, and it is made on a low-cost Rogers laminate.

  10. New fabrication of high-frequency (100-MHz) ultrasound PZT film kerfless linear array.

    Science.gov (United States)

    Zhu, Benpeng; Chan, Ngai Yui; Dai, Jiyan; Shung, K Kirk; Takeuchi, Shinichi; Zhou, Qifa

    2013-04-01

    The paper describes the design, fabrication, and measurements of a high-frequency ultrasound kerfless linear array prepared from hydrothermal lead zirconate titanate (PZT) thick film. The 15-μm hydrothermal PZT thick film with an area of 1 × 1 cm, obtained through a self-separation process from Ti substrate, was used to fabricate a 32-element 100-MHz kerfless linear array with photolithography. The bandwidth at -6 dB without matching layer, insertion loss around center frequency, and crosstalk between adjacent elements were measured to be 39%, -30 dB, and -15 dB, respectively.

  11. Dosimetry investigation of MOSFET for clinical IMRT dose verification.

    Science.gov (United States)

    Deshpande, Sudesh; Kumar, Rajesh; Ghadi, Yogesh; Neharu, R M; Kannan, V

    2013-06-01

    In IMRT, patient-specific dose verification is followed regularly at each centre. Simple and efficient dosimetry techniques play a very important role in routine clinical dosimetry QA. The MOSFET dosimeter offers several advantages over the conventional dosimeters such as its small detector size, immediate readout, immediate reuse, multiple point dose measurements. To use the MOSFET as routine clinical dosimetry system for pre-treatment dose verification in IMRT, a comprehensive set of experiments has been conducted, to investigate its linearity, reproducibility, dose rate effect and angular dependence for 6 MV x-ray beam. The MOSFETs shows a linear response with linearity coefficient of 0.992 for a dose range of 35 cGy to 427 cGy. The reproducibility of the MOSFET was measured by irradiating the MOSFET for ten consecutive irradiations in the dose range of 35 cGy to 427 cGy. The measured reproducibility of MOSFET was found to be within 4% up to 70 cGy and within 1.4% above 70 cGy. The dose rate effect on the MOSFET was investigated in the dose rate range 100 MU/min to 600 MU/min. The response of the MOSFET varies from -1.7% to 2.1%. The angular responses of the MOSFETs were measured at 10 degrees intervals from 90 to 270 degrees in an anticlockwise direction and normalized at gantry angle zero and it was found to be in the range of 0.98 ± 0.014 to 1.01 ± 0.014. The MOSFETs were calibrated in a phantom which was later used for IMRT verification. The measured calibration coefficients were found to be 1 mV/cGy and 2.995 mV/cGy in standard and high sensitivity mode respectively. The MOSFETs were used for pre-treatment dose verification in IMRT. Nine dosimeters were used for each patient to measure the dose in different plane. The average variation between calculated and measured dose at any location was within 3%. Dose verification using MOSFET and IMRT phantom was found to quick and efficient and well suited for a busy radiotherapy

  12. A METHOD FOR SELF-CALIBRATION IN SATELLITE WITH HIGH PRECISION OF SPACE LINEAR ARRAY CAMERA

    Directory of Open Access Journals (Sweden)

    W. Liu

    2016-06-01

    Full Text Available At present, the on-orbit calibration of the geometric parameters of a space surveying camera is usually processed by data from a ground calibration field after capturing the images. The entire process is very complicated and lengthy and cannot monitor and calibrate the geometric parameters in real time. On the basis of a large number of on-orbit calibrations, we found that owing to the influence of many factors, e.g., weather, it is often difficult to capture images of the ground calibration field. Thus, regular calibration using field data cannot be ensured. This article proposes a real time self-calibration method for a space linear array camera on a satellite using the optical auto collimation principle. A collimating light source and small matrix array CCD devices are installed inside the load system of the satellite; these use the same light path as the linear array camera. We can extract the location changes of the cross marks in the matrix array CCD to determine the real-time variations in the focal length and angle parameters of the linear array camera. The on-orbit status of the camera is rapidly obtained using this method. On one hand, the camera’s change regulation can be mastered accurately and the camera’s attitude can be adjusted in a timely manner to ensure optimal photography; in contrast, self-calibration of the camera aboard the satellite can be realized quickly, which improves the efficiency and reliability of photogrammetric processing.

  13. A Low-Complexity ESPRIT-Based DOA Estimation Method for Co-Prime Linear Arrays.

    Science.gov (United States)

    Sun, Fenggang; Gao, Bin; Chen, Lizhen; Lan, Peng

    2016-08-25

    The problem of direction-of-arrival (DOA) estimation is investigated for co-prime array, where the co-prime array consists of two uniform sparse linear subarrays with extended inter-element spacing. For each sparse subarray, true DOAs are mapped into several equivalent angles impinging on the traditional uniform linear array with half-wavelength spacing. Then, by applying the estimation of signal parameters via rotational invariance technique (ESPRIT), the equivalent DOAs are estimated, and the candidate DOAs are recovered according to the relationship among equivalent and true DOAs. Finally, the true DOAs are estimated by combining the results of the two subarrays. The proposed method achieves a better complexity-performance tradeoff as compared to other existing methods.

  14. MTF measurement and analysis of linear array HgCdTe infrared detectors

    Science.gov (United States)

    Zhang, Tong; Lin, Chun; Chen, Honglei; Sun, Changhong; Lin, Jiamu; Wang, Xi

    2018-01-01

    The slanted-edge technique is the main method for measurement detectors MTF, however this method is commonly used on planar array detectors. In this paper the authors present a modified slanted-edge method to measure the MTF of linear array HgCdTe detectors. Crosstalk is one of the major factors that degrade the MTF value of such an infrared detector. This paper presents an ion implantation guard-ring structure which was designed to effectively absorb photo-carriers that may laterally defuse between adjacent pixels thereby suppressing crosstalk. Measurement and analysis of the MTF of the linear array detectors with and without a guard-ring were carried out. The experimental results indicated that the ion implantation guard-ring structure effectively suppresses crosstalk and increases MTF value.

  15. Fast photoacoustic imaging system based on 320-element linear transducer array

    International Nuclear Information System (INIS)

    Yin Bangzheng; Xing Da; Wang Yi; Zeng Yaguang; Tan Yi; Chen Qun

    2004-01-01

    A fast photoacoustic (PA) imaging system, based on a 320-transducer linear array, was developed and tested on a tissue phantom. To reconstruct a test tomographic image, 64 time-domain PA signals were acquired from a tissue phantom with embedded light-absorption targets. A signal acquisition was accomplished by utilizing 11 phase-controlled sub-arrays, each consisting of four transducers. The results show that the system can rapidly map the optical absorption of a tissue phantom and effectively detect the embedded light-absorbing target. By utilizing the multi-element linear transducer array and phase-controlled imaging algorithm, we thus can acquire PA tomography more efficiently, compared to other existing technology and algorithms. The methodology and equipment thus provide a rapid and reliable approach to PA imaging that may have potential applications in noninvasive imaging and clinic diagnosis

  16. Diode array pumped, non-linear mirror Q-switched and mode-locked

    Indian Academy of Sciences (India)

    A non-linear mirror consisting of a lithium triborate crystal and a dichroic output coupler are used to mode-lock (passively) an Nd : YVO4 laser, pumped by a diode laser array. The laser can operate both in cw mode-locked and simultaneously Q-switched and mode-locked (QML) regime. The peak power of the laser while ...

  17. Linear array implementation of the EM algorithm for PET image reconstruction

    International Nuclear Information System (INIS)

    Rajan, K.; Patnaik, L.M.; Ramakrishna, J.

    1995-01-01

    The PET image reconstruction based on the EM algorithm has several attractive advantages over the conventional convolution back projection algorithms. However, the PET image reconstruction based on the EM algorithm is computationally burdensome for today's single processor systems. In addition, a large memory is required for the storage of the image, projection data, and the probability matrix. Since the computations are easily divided into tasks executable in parallel, multiprocessor configurations are the ideal choice for fast execution of the EM algorithms. In tis study, the authors attempt to overcome these two problems by parallelizing the EM algorithm on a multiprocessor systems. The parallel EM algorithm on a linear array topology using the commercially available fast floating point digital signal processor (DSP) chips as the processing elements (PE's) has been implemented. The performance of the EM algorithm on a 386/387 machine, IBM 6000 RISC workstation, and on the linear array system is discussed and compared. The results show that the computational speed performance of a linear array using 8 DSP chips as PE's executing the EM image reconstruction algorithm is about 15.5 times better than that of the IBM 6000 RISC workstation. The novelty of the scheme is its simplicity. The linear array topology is expandable with a larger number of PE's. The architecture is not dependant on the DSP chip chosen, and the substitution of the latest DSP chip is straightforward and could yield better speed performance

  18. A proof of the Woodward-Lawson sampling method for a finite linear array

    Science.gov (United States)

    Somers, Gary A.

    1993-01-01

    An extension of the continuous aperture Woodward-Lawson sampling theorem has been developed for a finite linear array of equidistant identical elements with arbitrary excitations. It is shown that by sampling the array factor at a finite number of specified points in the far field, the exact array factor over all space can be efficiently reconstructed in closed form. The specified sample points lie in real space and hence are measurable provided that the interelement spacing is greater than approximately one half of a wavelength. This paper provides insight as to why the length parameter used in the sampling formulas for discrete arrays is larger than the physical span of the lattice points in contrast with the continuous aperture case where the length parameter is precisely the physical aperture length.

  19. Voltage splay modes and enhanced phase locking in a modified linear Josephson array

    International Nuclear Information System (INIS)

    Harris, E.B.; Garland, J.C.

    1997-01-01

    We analyze a modified linear Josephson-junction array in which additional unbiased junctions are used to greatly enhance phase locking. This geometry exhibits strong correlated behavior, with an external magnetic field tuning the voltage splay angle between adjacent Josephson oscillators. The array displays a coherent in-phase mode for f=(1)/(2), where f is the magnetic frustration, while for 0 p (f)=2aV dc /Φ 0 (1-2f). The locked splay modes are found to be tolerant of critical current disorder approaching 100%. The stability of the array has also been studied by computing Floquet exponents. These exponents are found to be negative for all array lengths, with a 1/N 2 dependence, N being the number of series-connected junctions. copyright 1996 The American Physical Society

  20. Prognostics of Power MOSFET

    Science.gov (United States)

    Celaya, Jose Ramon; Saxena, Abhinav; Vashchenko, Vladislay; Saha, Sankalita; Goebel, Kai Frank

    2011-01-01

    This paper demonstrates how to apply prognostics to power MOSFETs (metal oxide field effect transistor). The methodology uses thermal cycling to age devices and Gaussian process regression to perform prognostics. The approach is validated with experiments on 100V power MOSFETs. The failure mechanism for the stress conditions is determined to be die-attachment degradation. Change in ON-state resistance is used as a precursor of failure due to its dependence on junction temperature. The experimental data is augmented with a finite element analysis simulation that is based on a two-transistor model. The simulation assists in the interpretation of the degradation phenomena and SOA (safe operation area) change.

  1. Energy dependence corrections to MOSFET dosimetric sensitivity

    International Nuclear Information System (INIS)

    Cheung, T.; Yu, P.K.N.; Butson, M.J.; Illawarra Cancer Care Centre, Crown St, Wollongong

    2009-01-01

    Metal Oxide Semiconductor Field Effect Transistors (MOSFET's) are dosimeters which are now frequently utilized in radiotherapy treatment applications. An improved MOSFET, clinical semiconductor dosimetry system (CSDS) which utilizes improved packaging for the MOSFET device has been studied for energy dependence of sensitivity to x-ray radiation measurement. Energy dependence from 50 kVp to 10 MV x-rays has been studied and found to vary by up to a factor of 3.2 with 75 kVp producing the highest sensitivity response. The detectors average life span in high sensitivity mode is energy related and ranges from approximately 100 Gy for 75 kVp x-rays to approximately 300 Gy at 6MV x-ray energy. The MOSFET detector has also been studied for sensitivity variations with integrated dose history. It was found to become less sensitive to radiation with age and the magnitude of this effect is dependant on radiation energy with lower energies producing a larger sensitivity reduction with integrated dose. The reduction in sensitivity is however approximated reproducibly by a slightly non linear, second order polynomial function allowing corrections to be made to reading to account for this effect to provide more accurate dose assessments both in phantom and in-vivo.

  2. Energy dependence corrections to MOSFET dosimetric sensitivity.

    Science.gov (United States)

    Cheung, T; Butson, M J; Yu, P K N

    2009-03-01

    Metal Oxide Semiconductor Field Effect Transistors (MOSFET's) are dosimeters which are now frequently utilized in radiotherapy treatment applications. An improved MOSFET, clinical semiconductor dosimetry system (CSDS) which utilizes improved packaging for the MOSFET device has been studied for energy dependence of sensitivity to x-ray radiation measurement. Energy dependence from 50 kVp to 10 MV x-rays has been studied and found to vary by up to a factor of 3.2 with 75 kVp producing the highest sensitivity response. The detectors average life span in high sensitivity mode is energy related and ranges from approximately 100 Gy for 75 kVp x-rays to approximately 300 Gy at 6 MV x-ray energy. The MOSFET detector has also been studied for sensitivity variations with integrated dose history. It was found to become less sensitive to radiation with age and the magnitude of this effect is dependant on radiation energy with lower energies producing a larger sensitivity reduction with integrated dose. The reduction in sensitivity is however approximated reproducibly by a slightly non linear, second order polynomial function allowing corrections to be made to readings to account for this effect to provide more accurate dose assessments both in phantom and in-vivo.

  3. Research on geometric rectification of the Large FOV Linear Array Whiskbroom Image

    Science.gov (United States)

    Liu, Dia; Liu, Hui-tong; Dong, Hao; Liu, Xiao-bo

    2015-08-01

    To solve the geometric distortion problem of large FOV linear array whiskbroom image, a model of multi center central projection collinearity equation was founded considering its whiskbroom and linear CCD imaging feature, and the principle of distortion was analyzed. Based on the rectification method with POS, we introduced the angular position sensor data of the servo system, and restored the geometric imaging process exactly. An indirect rectification scheme aiming at linear array imaging with best scanline searching method was adopted, matrixes for calculating the exterior orientation elements was redesigned. We improved two iterative algorithms for this device, and did comparison and analysis. The rectification for the images of airborne imaging experiment showed ideal effect.

  4. HPV genotype-specific concordance between EuroArray HPV, Anyplex II HPV28 and Linear Array HPV Genotyping test in Australian cervical samples

    Directory of Open Access Journals (Sweden)

    Alyssa M. Cornall

    2017-12-01

    Full Text Available Purpose: To compare human papillomavirus genotype-specific performance of two genotyping assays, Anyplex II HPV28 (Seegene and EuroArray HPV (EuroImmun, with Linear Array HPV (Roche. Methods: DNA extracted from clinican-collected cervical brush specimens in PreservCyt medium (Hologic, from 403 women undergoing management for detected cytological abnormalities, was tested on the three assays. Genotype-specific agreement were assessed by Cohen's kappa statistic and Fisher's z-test of significance between proportions. Results: Agreement between Linear Array and the other 2 assays was substantial to almost perfect (κ = 0.60 − 1.00 for most genotypes, and was almost perfect (κ = 0.81 – 0.98 for almost all high-risk genotypes. Linear Array overall detected most genotypes more frequently, however this was only statistically significant for HPV51 (EuroArray; p = 0.0497, HPV52 (Anyplex II; p = 0.039 and HPV61 (Anyplex II; p=0.047. EuroArray detected signficantly more HPV26 (p = 0.002 and Anyplex II detected more HPV42 (p = 0.035 than Linear Array. Each assay performed differently for HPV68 detection: EuroArray and LA were in moderate to substantial agreement with Anyplex II (κ = 0.46 and 0.62, respectively, but were in poor disagreement with each other (κ = −0.01. Conclusions: EuroArray and Anyplex II had similar sensitivity to Linear Array for most high-risk genotypes, with slightly lower sensitivity for HPV 51 or 52. Keywords: Human papillomavirus, Genotyping, Linear Array, Anyplex II, EuroArray, Cervix

  5. Pattern Nulling of Linear Antenna Arrays Using Backtracking Search Optimization Algorithm

    Directory of Open Access Journals (Sweden)

    Kerim Guney

    2015-01-01

    Full Text Available An evolutionary method based on backtracking search optimization algorithm (BSA is proposed for linear antenna array pattern synthesis with prescribed nulls at interference directions. Pattern nulling is obtained by controlling only the amplitude, position, and phase of the antenna array elements. BSA is an innovative metaheuristic technique based on an iterative process. Various numerical examples of linear array patterns with the prescribed single, multiple, and wide nulls are given to illustrate the performance and flexibility of BSA. The results obtained by BSA are compared with the results of the following seventeen algorithms: particle swarm optimization (PSO, genetic algorithm (GA, modified touring ant colony algorithm (MTACO, quadratic programming method (QPM, bacterial foraging algorithm (BFA, bees algorithm (BA, clonal selection algorithm (CLONALG, plant growth simulation algorithm (PGSA, tabu search algorithm (TSA, memetic algorithm (MA, nondominated sorting GA-2 (NSGA-2, multiobjective differential evolution (MODE, decomposition with differential evolution (MOEA/D-DE, comprehensive learning PSO (CLPSO, harmony search algorithm (HSA, seeker optimization algorithm (SOA, and mean variance mapping optimization (MVMO. The simulation results show that the linear antenna array synthesis using BSA provides low side-lobe levels and deep null levels.

  6. Noise analysis and performance of a selfscanned linear InSb detector array

    International Nuclear Information System (INIS)

    Finger, G.; Meyer, M.; Moorwood, A.F.M.

    1987-01-01

    A noise model for detectors operated in the capacitive discharge mode is presented. It is used to analyze the noise performance of the ESO nested timing readout technique applied to a linear 32-element InSb array which is multiplexed by a silicon switched-FET shift register. Analysis shows that KTC noise of the videoline is the major noise contribution; it can be eliminated by weighted double-correlated sampling. Best noise performance of this array is achieved at the smallest possible reverse bias voltage (not more than 20 mV) whereas excess noise is observed at higher reverse bias voltages. 5 references

  7. Pulse Splitting for Harmonic Beamforming in Time-Modulated Linear Arrays

    Directory of Open Access Journals (Sweden)

    Lorenzo Poli

    2014-01-01

    Full Text Available A novel strategy for harmonic beamforming in time-modulated linear arrays is proposed. The pulse splitting technique is exploited to simultaneously generate two harmonic patterns, one at the central frequency and another at a preselected harmonic of arbitrary order, while controlling the maximum level of the remaining sideband radiations. An optimization strategy based on the particle swarm optimizer is developed in order to determine the optimal parameters describing the pulse sequence used to modulate the excitation weights of the array elements. Representative numerical results are reported and discussed to point out potentialities and limitations of the proposed approach.

  8. Linear and nonlinear excitations in two stacks of parallel arrays of long Josephson junctions

    DEFF Research Database (Denmark)

    Carapella, G.; Constabile, Giovanni; Latempa, R.

    2000-01-01

    We investigate a structure consisting of two parallel arrays of long Josephson junctions sharing a common electrode that allows inductive coupling between the arrays. A model for this structure is derived starting from the description of its continuous limit. The excitation of linear cavity modes...... known from continuous and discrete systems as well as the excitation of a new state exhibiting synchronization in two dimensions are inferred from the mathematical model of the system. The stable nonlinear solution of the coupled sine-Gordon equations describing the system is found to consist...

  9. Small field electron beam dosimetry using MOSFET detector.

    Science.gov (United States)

    Amin, Md Nurul; Heaton, Robert; Norrlinger, Bern; Islam, Mohammad K

    2010-10-04

    The dosimetry of very small electron fields can be challenging due to relative shifts in percent depth-dose curves, including the location of dmax, and lack of lateral electronic equilibrium in an ion chamber when placed in the beam. Conventionally a small parallel plate chamber or film is utilized to perform small field electron beam dosimetry. Since modern radiotherapy departments are becoming filmless in favor of electronic imaging, an alternate and readily available clinical dosimeter needs to be explored. We have studied the performance of MOSFET as a relative dosimeter in small field electron beams. The reproducibility, linearity and sensitivity of a high-sensitivity microMOSFET were investigated for clinical electron beams. In addition, the percent depth doses, output factors and profiles have been measured in a water tank with MOSFET and compared with those measured by an ion chamber for a range of field sizes from 1 cm diameter to 10 cm × 10 cm for 6, 12, 16 and 20 MeV beams. Similar comparative measurements were also per-formed with MOSFET and films in solid water phantom. The MOSFET sensitivity was found to be practically constant over the range of field sizes investigated. The dose response was found to be linear and reproducible (within ± 1% for 100 cGy). An excellent agreement was observed among the central axis depth dose curves measured using MOSFET, film and ion chamber. The output factors measured with MOSFET for small fields agreed to within 3% with those measured by film dosimetry. Overall results indicate that MOSFET can be utilized to perform dosimetry for small field electron beam.

  10. High performance germanium MOSFETs

    Energy Technology Data Exchange (ETDEWEB)

    Saraswat, Krishna [Department of Electrical Engineering, Stanford University, Stanford, CA 94305 (United States)]. E-mail: saraswat@stanford.edu; Chui, Chi On [Department of Electrical Engineering, Stanford University, Stanford, CA 94305 (United States); Krishnamohan, Tejas [Department of Electrical Engineering, Stanford University, Stanford, CA 94305 (United States); Kim, Donghyun [Department of Electrical Engineering, Stanford University, Stanford, CA 94305 (United States); Nayfeh, Ammar [Department of Electrical Engineering, Stanford University, Stanford, CA 94305 (United States); Pethe, Abhijit [Department of Electrical Engineering, Stanford University, Stanford, CA 94305 (United States)

    2006-12-15

    Ge is a very promising material as future channel materials for nanoscale MOSFETs due to its high mobility and thus a higher source injection velocity, which translates into higher drive current and smaller gate delay. However, for Ge to become main-stream, surface passivation and heterogeneous integration of crystalline Ge layers on Si must be achieved. We have demonstrated growth of fully relaxed smooth single crystal Ge layers on Si using a novel multi-step growth and hydrogen anneal process without any graded buffer SiGe layer. Surface passivation of Ge has been achieved with its native oxynitride (GeO {sub x}N {sub y} ) and high-permittivity (high-k) metal oxides of Al, Zr and Hf. High mobility MOSFETs have been demonstrated in bulk Ge with high-k gate dielectrics and metal gates. However, due to their smaller bandgap and higher dielectric constant, most high mobility materials suffer from large band-to-band tunneling (BTBT) leakage currents and worse short channel effects. We present novel, Si and Ge based heterostructure MOSFETs, which can significantly reduce the BTBT leakage currents while retaining high channel mobility, making them suitable for scaling into the sub-15 nm regime. Through full band Monte-Carlo, Poisson-Schrodinger and detailed BTBT simulations we show a dramatic reduction in BTBT and excellent electrostatic control of the channel, while maintaining very high drive currents in these highly scaled heterostructure DGFETs. Heterostructure MOSFETs with varying strained-Ge or SiGe thickness, Si cap thickness and Ge percentage were fabricated on bulk Si and SOI substrates. The ultra-thin ({approx}2 nm) strained-Ge channel heterostructure MOSFETs exhibited >4x mobility enhancements over bulk Si devices and >10x BTBT reduction over surface channel strained SiGe devices.

  11. High performance germanium MOSFETs

    International Nuclear Information System (INIS)

    Saraswat, Krishna; Chui, Chi On; Krishnamohan, Tejas; Kim, Donghyun; Nayfeh, Ammar; Pethe, Abhijit

    2006-01-01

    Ge is a very promising material as future channel materials for nanoscale MOSFETs due to its high mobility and thus a higher source injection velocity, which translates into higher drive current and smaller gate delay. However, for Ge to become main-stream, surface passivation and heterogeneous integration of crystalline Ge layers on Si must be achieved. We have demonstrated growth of fully relaxed smooth single crystal Ge layers on Si using a novel multi-step growth and hydrogen anneal process without any graded buffer SiGe layer. Surface passivation of Ge has been achieved with its native oxynitride (GeO x N y ) and high-permittivity (high-k) metal oxides of Al, Zr and Hf. High mobility MOSFETs have been demonstrated in bulk Ge with high-k gate dielectrics and metal gates. However, due to their smaller bandgap and higher dielectric constant, most high mobility materials suffer from large band-to-band tunneling (BTBT) leakage currents and worse short channel effects. We present novel, Si and Ge based heterostructure MOSFETs, which can significantly reduce the BTBT leakage currents while retaining high channel mobility, making them suitable for scaling into the sub-15 nm regime. Through full band Monte-Carlo, Poisson-Schrodinger and detailed BTBT simulations we show a dramatic reduction in BTBT and excellent electrostatic control of the channel, while maintaining very high drive currents in these highly scaled heterostructure DGFETs. Heterostructure MOSFETs with varying strained-Ge or SiGe thickness, Si cap thickness and Ge percentage were fabricated on bulk Si and SOI substrates. The ultra-thin (∼2 nm) strained-Ge channel heterostructure MOSFETs exhibited >4x mobility enhancements over bulk Si devices and >10x BTBT reduction over surface channel strained SiGe devices

  12. CFD Analysis of a Finite Linear Array of Savonius Wind Turbines

    Science.gov (United States)

    Belkacem, Belabes; Paraschivoiu, Marius

    2016-09-01

    Vertical axis wind turbines such as Savonius rotors have been shown to be suitable for low wind speeds normally associated with wind resources in all corners of the world. However, the efficiency of the rotor is low. This paper presents results of Computational Fluid Dynamics (CFD) simulations for an array of Savonius rotors that show a significant increase in efficiency. It looks at identifying the effect on the energy yield of a number of turbines placed in a linear array. Results from this investigation suggest that an increase in the energy yield could be achieved which can reach almost two times than the conventional Savonius wind turbine in the case of an array of 11turbines with a distance of 1.4R in between them. The effect of different TSR values and different wind inlet speeds on the farm has been studied for both a synchronous and asynchronous wind farm.

  13. CFD Analysis of a Finite Linear Array of Savonius Wind Turbines

    International Nuclear Information System (INIS)

    Belkacem, Belabes; Paraschivoiu, Marius

    2016-01-01

    Vertical axis wind turbines such as Savonius rotors have been shown to be suitable for low wind speeds normally associated with wind resources in all corners of the world. However, the efficiency of the rotor is low. This paper presents results of Computational Fluid Dynamics (CFD) simulations for an array of Savonius rotors that show a significant increase in efficiency. It looks at identifying the effect on the energy yield of a number of turbines placed in a linear array. Results from this investigation suggest that an increase in the energy yield could be achieved which can reach almost two times than the conventional Savonius wind turbine in the case of an array of 11turbines with a distance of 1.4R in between them. The effect of different TSR values and different wind inlet speeds on the farm has been studied for both a synchronous and asynchronous wind farm. (paper)

  14. Small-angle tomography algorithm for transmission inspection of acoustic linear array

    Directory of Open Access Journals (Sweden)

    Soldatov Alexey

    2016-01-01

    Full Text Available The paper describes the algorithm of reconstruction of tomographic image used in the through-transition method in a small angle sounding of acoustic linear arrays and the results of practical application of the proposed algorithm. In alternate probing of each element of emitting array and simultaneous reception of all elements of the receiving array is a collection of shadow images of the testing zone. The testing zone is divided into small local areas and using the collection of shadow images computed matrix normalized transmission coefficients for each of the small local area. Tomographic image control zone is obtained by submitting the resulting matrix of normalized transmission coefficients in grayscale or colors.

  15. Two-dimensional Fast ESPRIT Algorithm for Linear Array SAR Imaging

    Directory of Open Access Journals (Sweden)

    Zhao Yi-chao

    2015-10-01

    Full Text Available The linear array Synthetic Aperture Radar (SAR system is a popular research tool, because it can realize three-dimensional imaging. However, owning to limitations of the aircraft platform and actual conditions, resolution improvement is difficult in cross-track and along-track directions. In this study, a twodimensional fast Estimation of Signal Parameters by Rotational Invariance Technique (ESPRIT algorithm for linear array SAR imaging is proposed to overcome these limitations. This approach combines the Gerschgorin disks method and the ESPRIT algorithm to estimate the positions of scatterers in cross and along-rack directions. Moreover, the reflectivity of scatterers is obtained by a modified pairing method based on “region growing”, replacing the least-squares method. The simulation results demonstrate the applicability of the algorithm with high resolution, quick calculation, and good real-time response.

  16. Optimal linear generator with Halbach array for harvesting of vibration energy during human walking

    Directory of Open Access Journals (Sweden)

    Joonsoo Jun

    2016-05-01

    Full Text Available In IT business, the capacity of the battery in smartphone was drastically improved to digest various functions such as communication, Internet, e-banking, and entertainment. Although the capacity of the battery is improved, it still needs to be upgraded due to customer’s demands. In this article, we optimize the design of the linear generator with the Halbach array to improve the efficiency of harvesting vibration energy during human walking for the battery capacitance. We propose the optimal design of the tubular permanent magnet with the linear generator that uses a Halbach array. The approximate model is established using generic algorithm. Furthermore, we performed electromagnetic finite element analysis to predict the induced voltage.

  17. Nature-inspired Cuckoo Search Algorithm for Side Lobe Suppression in a Symmetric Linear Antenna Array

    Directory of Open Access Journals (Sweden)

    K. N. Abdul Rani

    2012-09-01

    Full Text Available In this paper, we proposed a newly modified cuckoo search (MCS algorithm integrated with the Roulette wheel selection operator and the inertia weight controlling the search ability towards synthesizing symmetric linear array geometry with minimum side lobe level (SLL and/or nulls control. The basic cuckoo search (CS algorithm is primarily based on the natural obligate brood parasitic behavior of some cuckoo species in combination with the Levy flight behavior of some birds and fruit flies. The CS metaheuristic approach is straightforward and capable of solving effectively general N-dimensional, linear and nonlinear optimization problems. The array geometry synthesis is first formulated as an optimization problem with the goal of SLL suppression and/or null prescribed placement in certain directions, and then solved by the newly MCS algorithm for the optimum element or isotropic radiator locations in the azimuth-plane or xy-plane. The study also focuses on the four internal parameters of MCS algorithm specifically on their implicit effects in the array synthesis. The optimal inter-element spacing solutions obtained by the MCS-optimizer are validated through comparisons with the standard CS-optimizer and the conventional array within the uniform and the Dolph-Chebyshev envelope patterns using MATLABTM. Finally, we also compared the fine-tuned MCS algorithm with two popular evolutionary algorithm (EA techniques include particle swarm optimization (PSO and genetic algorithms (GA.

  18. Kalman filter-based tracking of moving objects using linear ultrasonic sensor array for road vehicles

    Science.gov (United States)

    Li, Shengbo Eben; Li, Guofa; Yu, Jiaying; Liu, Chang; Cheng, Bo; Wang, Jianqiang; Li, Keqiang

    2018-01-01

    Detection and tracking of objects in the side-near-field has attracted much attention for the development of advanced driver assistance systems. This paper presents a cost-effective approach to track moving objects around vehicles using linearly arrayed ultrasonic sensors. To understand the detection characteristics of a single sensor, an empirical detection model was developed considering the shapes and surface materials of various detected objects. Eight sensors were arrayed linearly to expand the detection range for further application in traffic environment recognition. Two types of tracking algorithms, including an Extended Kalman filter (EKF) and an Unscented Kalman filter (UKF), for the sensor array were designed for dynamic object tracking. The ultrasonic sensor array was designed to have two types of fire sequences: mutual firing or serial firing. The effectiveness of the designed algorithms were verified in two typical driving scenarios: passing intersections with traffic sign poles or street lights, and overtaking another vehicle. Experimental results showed that both EKF and UKF had more precise tracking position and smaller RMSE (root mean square error) than a traditional triangular positioning method. The effectiveness also encourages the application of cost-effective ultrasonic sensors in the near-field environment perception in autonomous driving systems.

  19. Broadband implementation of coprime linear microphone arrays for direction of arrival estimation.

    Science.gov (United States)

    Bush, Dane; Xiang, Ning

    2015-07-01

    Coprime arrays represent a form of sparse sensing which can achieve narrow beams using relatively few elements, exceeding the spatial Nyquist sampling limit. The purpose of this paper is to expand on and experimentally validate coprime array theory in an acoustic implementation. Two nested sparse uniform linear subarrays with coprime number of elements ( M and N) each produce grating lobes that overlap with one another completely in just one direction. When the subarray outputs are combined it is possible to retain the shared beam while mostly canceling the other superfluous grating lobes. In this way a small number of microphones ( N+M-1) creates a narrow beam at higher frequencies, comparable to a densely populated uniform linear array of MN microphones. In this work beampatterns are simulated for a range of single frequencies, as well as bands of frequencies. Narrowband experimental beampatterns are shown to correspond with simulated results even at frequencies other than the arrays design frequency. Narrowband side lobe locations are shown to correspond to the theoretical values. Side lobes in the directional pattern are mitigated by increasing bandwidth of analyzed signals. Direction of arrival estimation is also implemented for two simultaneous noise sources in a free field condition.

  20. 3D Analytical Calculation of Forces between Linear Halbach-Type Permanent Magnet Arrays

    OpenAIRE

    Allag , Hicham; Yonnet , Jean-Paul; Latreche , Mohamed E. H.

    2009-01-01

    International audience; Usely, in analytical calculation of magnetic and mechanical quantities of Halbach systems, the authors use the Fourier series approximation because the exact calculations are more difficult. In this work the interaction forces between linear Halbach arrays are analytically calculated thanks to our recent development 3D exact calculation of forces between two cuboïdal magnets with parallel and perpendicular magnetization. We essentially describe the way to separately ca...

  1. An Optimal DEM Reconstruction Method for Linear Array Synthetic Aperture Radar Based on Variational Model

    Directory of Open Access Journals (Sweden)

    Shi Jun

    2015-02-01

    Full Text Available Downward-looking Linear Array Synthetic Aperture Radar (LASAR has many potential applications in the topographic mapping, disaster monitoring and reconnaissance applications, especially in the mountainous area. However, limited by the sizes of platforms, its resolution in the linear array direction is always far lower than those in the range and azimuth directions. This disadvantage leads to the blurring of Three-Dimensional (3D images in the linear array direction, and restricts the application of LASAR. To date, the research on 3D SAR image enhancement has focused on the sparse recovery technique. In this case, the one-to-one mapping of Digital Elevation Model (DEM brakes down. To overcome this, an optimal DEM reconstruction method for LASAR based on the variational model is discussed in an effort to optimize the DEM and the associated scattering coefficient map, and to minimize the Mean Square Error (MSE. Using simulation experiments, it is found that the variational model is more suitable for DEM enhancement applications to all kinds of terrains compared with the Orthogonal Matching Pursuit (OMPand Least Absolute Shrinkage and Selection Operator (LASSO methods.

  2. Image guided IMRT dosimetry using anatomy specific MOSFET configurations.

    Science.gov (United States)

    Amin, Md Nurul; Norrlinger, Bern; Heaton, Robert; Islam, Mohammad

    2008-06-23

    We have investigated the feasibility of using a set of multiple MOSFETs in conjunction with the mobile MOSFET wireless dosimetry system, to perform a comprehensive and efficient quality assurance (QA) of IMRT plans. Anatomy specific MOSFET configurations incorporating 5 MOSFETs have been developed for a specially designed IMRT dosimetry phantom. Kilovoltage cone beam computed tomography (kV CBCT) imaging was used to increase the positional precision and accuracy of the detectors and phantom, and so minimize dosimetric uncertainties in high dose gradient regions. The effectiveness of the MOSFET based dose measurements was evaluated by comparing the corresponding doses measured by an ion chamber. For 20 head and neck IMRT plans the agreement between the MOSFET and ionization chamber dose measurements was found to be within -0.26 +/- 0.88% and 0.06 +/- 1.94% (1 sigma) for measurement points in the high dose and low dose respectively. A precision of 1 mm in detector positioning was achieved by using the X-Ray Volume Imaging (XVI) kV CBCT system available with the Elekta Synergy Linear Accelerator. Using the anatomy specific MOSFET configurations, simultaneous measurements were made at five strategically located points covering high dose and low dose regions. The agreement between measurements and calculated doses by the treatment planning system for head and neck and prostate IMRT plans was found to be within 0.47 +/- 2.45%. The results indicate that a cylindrical phantom incorporating multiple MOSFET detectors arranged in an anatomy specific configuration, in conjunction with image guidance, can be utilized to perform a comprehensive and efficient quality assurance of IMRT plans.

  3. Calibration of a MOSFET detection system for 6-MV in vivo dosimetry

    International Nuclear Information System (INIS)

    Scalchi, Paolo; Francescon, P.

    1998-01-01

    Purpose: Metal oxide semiconductor field-effect transistor (MOSFET) detectors were calibrated to perform in vivo dosimetry during 6-MV treatments, both in normal setup and total body irradiation (TBI) conditions. Methods and Materials: MOSFET water-equivalent depth, dependence of the calibration factors (CFs) on the field sizes, MOSFET orientation, bias supply, accumulated dose, incidence angle, temperature, and spoiler-skin distance in TBI setup were investigated. MOSFET reproducibility was verified. The correlation between the water-equivalent midplane depth and the ratio of the exit MOSFET readout divided by the entrance MOSFET readout was studied. MOSFET midplane dosimetry in TBI setup was compared with thermoluminescent dosimetry in an anthropomorphic phantom. By using ionization chamber measurements, the TBI midplane dosimetry was also verified in the presence of cork as a lung substitute. Results: The water-equivalent depth of the MOSFET is about 0.8 mm or 1.8 mm, depending on which sensor side faces the beam. The field size also affects this quantity; Monte Carlo simulations allow driving this behavior by changes in the contaminating electron mean energy. The CFs vary linearly as a function of the square field side, for fields ranging from 5 x 5 to 30 x 30 cm 2 . In TBI setup, varying the spoiler-skin distance between 5 mm and 10 cm affects the CFs within 5%. The MOSFET reproducibility is about 3% (2 SD) for the doses normally delivered to the patients. The effect of the accumulated dose on the sensor response is negligible. For beam incidence ranging from 0 deg. to 90 deg. , the MOSFET response varies within 7%. No monotonic correlation between the sensor response and the temperature is apparent. Good correlation between the water-equivalent midplane depth and the ratio of the exit MOSFET readout divided by the entrance MOSFET readout was found (the correlation coefficient is about 1). The MOSFET midplane dosimetry relevant to the anthropomorphic phantom

  4. HPV genotype-specific concordance between EuroArray HPV, Anyplex II HPV28 and Linear Array HPV Genotyping test in Australian cervical samples.

    Science.gov (United States)

    Cornall, Alyssa M; Poljak, Marin; Garland, Suzanne M; Phillips, Samuel; Machalek, Dorothy A; Tan, Jeffrey H; Quinn, Michael A; Tabrizi, Sepehr N

    2017-12-01

    To compare human papillomavirus genotype-specific performance of two genotyping assays, Anyplex II HPV28 (Seegene) and EuroArray HPV (EuroImmun), with Linear Array HPV (Roche). DNA extracted from clinican-collected cervical brush specimens in PreservCyt medium (Hologic), from 403 women undergoing management for detected cytological abnormalities, was tested on the three assays. Genotype-specific agreement were assessed by Cohen's kappa statistic and Fisher's z-test of significance between proportions. Agreement between Linear Array and the other 2 assays was substantial to almost perfect (κ = 0.60 - 1.00) for most genotypes, and was almost perfect (κ = 0.81 - 0.98) for almost all high-risk genotypes. Linear Array overall detected most genotypes more frequently, however this was only statistically significant for HPV51 (EuroArray; p = 0.0497), HPV52 (Anyplex II; p = 0.039) and HPV61 (Anyplex II; p=0.047). EuroArray detected signficantly more HPV26 (p = 0.002) and Anyplex II detected more HPV42 (p = 0.035) than Linear Array. Each assay performed differently for HPV68 detection: EuroArray and LA were in moderate to substantial agreement with Anyplex II (κ = 0.46 and 0.62, respectively), but were in poor disagreement with each other (κ = -0.01). EuroArray and Anyplex II had similar sensitivity to Linear Array for most high-risk genotypes, with slightly lower sensitivity for HPV 51 or 52. Copyright © 2017 The Authors. Published by Elsevier B.V. All rights reserved.

  5. Design of a linear detector array unit for high energy x-ray helical computed tomography and linear scanner

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jeong Tae; Park, Jong Hwan; Kim, Gi Yoon [Dept. of Nuclear and Quantum Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon (Korea, Republic of); Kim, Dong Geun [Medical Imaging Department, ASTEL Inc., Seongnam (Korea, Republic of); Park, Shin Woong; Yi, Yun [Dept. of Electronics and Information Eng, Korea University, Seoul (Korea, Republic of); Kim, Hyun Duk [Research Center, Luvantix ADM Co., Ltd., Daejeon (Korea, Republic of)

    2016-11-15

    A linear detector array unit (LdAu) was proposed and designed for the high energy X-ray 2-d and 3-d imaging systems for industrial non-destructive test. Specially for 3-d imaging, a helical CT with a 15 MeV linear accelerator and a curved detector is proposed. the arc-shape detector can be formed by many LdAus all of which are arranged to face the focal spot when the source-to-detector distance is fixed depending on the application. An LdAu is composed of 10 modules and each module has 48 channels of CdWO{sub 4} (CWO) blocks and Si PIn photodiodes with 0.4 mm pitch. this modular design was made for easy manufacturing and maintenance. through the Monte carlo simulation, the CWO detector thickness of 17 mm was optimally determined. the silicon PIn photodiodes were designed as 48 channel arrays and fabricated with NTD (neutron transmutation doping) wafers of high resistivity and showed excellent leakage current properties below 1 nA at 10 V reverse bias. to minimize the low-voltage breakdown, the edges of the active layer and the guard ring were designed as a curved shape. the data acquisition system was also designed and fabricated as three independent functional boards; a sensor board, a capture board and a communication board to a Pc. this paper describes the design of the detectors (CWO blocks and Si PIn photodiodes) and the 3-board data acquisition system with their simulation results.

  6. Cryogenic switched MOSFET characterization

    Science.gov (United States)

    1981-01-01

    Both p channel and n channel enhancement mode MOSFETs can be readily switched on and off at temperatures as low as 2.8 K so that switch sampled readout of a VLWIR Ge:Ga focal plane is electronically possible. Noise levels as low as 100 rms electrons per sample (independent of sample rate) can be achieved using existing p channel MOSFETs, at overall rates up to 30,000 samples/second per multiplexed channel (e.g., 32 detectors at a rate of almost 1,000 frames/second). Run of the mill devices, including very low power dissipation n channel FETs would still permit noise levels of the order of 500 electrons/sample.

  7. MCT/MOSFET Switch

    Science.gov (United States)

    Rippel, Wally E.

    1990-01-01

    Metal-oxide/semiconductor-controlled thyristor (MCT) and metal-oxide/semiconductor field-effect transistor (MOSFET) connected in switching circuit to obtain better performance. Offers high utilization of silicon, low forward voltage drop during "on" period of operating cycle, fast turnon and turnoff, and large turnoff safe operating area. Includes ability to operate at high temperatures, high static blocking voltage, and ease of drive.

  8. The investigation of the phase-locking stability in linear arrays of Josephson junctions and arrays closed into a superconducting loop

    International Nuclear Information System (INIS)

    Darula, M.; Seidel, P.; Misanik, B.; Busse, F.; Heinz, E.; Benacka, S.

    1994-01-01

    The phase-locking stability is investigated theoretically in two structures: linear arrays of Josephson junctions shunted by resistive load and arrays closed into superconducting loop. In both cases the quasi-identical junctions are supposed to be in arrays. The stability as a function of spread in Josephson junction parameters as well as a function of other circuit parameters is investigated. Using Floquet theory it is shown that spread in critical currents of Josephson junction limit the stability of phase-locking state. From the simulations it follows that the phase-locking in arrays closed into superconducting loop is more stable against the spread in junction parameters than in the case of linear array of Josephson junctions. (orig.)

  9. Study on the near-field non-linearity (SMILE) of high power diode laser arrays

    Science.gov (United States)

    Zhang, Hongyou; Jia, Yangtao; Li, Changxuan; Zah, Chung-en; Liu, Xingsheng

    2018-02-01

    High power laser diodes have been found a wide range of industrial, space, medical applications, characterized by high conversion efficiency, small size, light weight and a long lifetime. However, due to thermal induced stress, each emitter in a semiconductor laser bar or array is displaced along p-n junction, resulting of each emitter is not in a line, called Near-field Non-linearity. Near-field Non-linearity along laser bar (also known as "SMILE") determines the outcome of optical coupling and beam shaping [1]. The SMILE of a laser array is the main obstacle to obtain good optical coupling efficiency and beam shaping from a laser array. Larger SMILE value causes a larger divergence angle and a wider line after collimation and focusing, respectively. In this letter, we simulate two different package structures based on MCC (Micro Channel Cooler) with Indium and AuSn solders, including the distribution of normal stress and the SMILE value. According to the theoretical results, we found the distribution of normal stress on laser bar shows the largest in the middle and drops rapidly near both ends. At last, we did another experiment to prove that the SMILE value of a laser bar was mainly affected by the die bonding process, rather than the operating condition.

  10. Distributed 3D Source Localization from 2D DOA Measurements Using Multiple Linear Arrays

    Directory of Open Access Journals (Sweden)

    Antonio Canclini

    2017-01-01

    Full Text Available This manuscript addresses the problem of 3D source localization from direction of arrivals (DOAs in wireless acoustic sensor networks. In this context, multiple sensors measure the DOA of the source, and a central node combines the measurements to yield the source location estimate. Traditional approaches require 3D DOA measurements; that is, each sensor estimates the azimuth and elevation of the source by means of a microphone array, typically in a planar or spherical configuration. The proposed methodology aims at reducing the hardware and computational costs by combining measurements related to 2D DOAs estimated from linear arrays arbitrarily displaced in the 3D space. Each sensor measures the DOA in the plane containing the array and the source. Measurements are then translated into an equivalent planar geometry, in which a set of coplanar equivalent arrays observe the source preserving the original DOAs. This formulation is exploited to define a cost function, whose minimization leads to the source location estimation. An extensive simulation campaign validates the proposed approach and compares its accuracy with state-of-the-art methodologies.

  11. High voltage MOSFET switching circuit

    Science.gov (United States)

    McEwan, Thomas E.

    1994-01-01

    The problem of source lead inductance in a MOSFET switching circuit is compensated for by adding an inductor to the gate circuit. The gate circuit inductor produces an inductive spike which counters the source lead inductive drop to produce a rectangular drive voltage waveform at the internal gate-source terminals of the MOSFET.

  12. Polarized Uniform Linear Array System: Beam Radiation Pattern, Beamforming Diversity Order, and Channel Capacity

    Directory of Open Access Journals (Sweden)

    Xin Su

    2015-01-01

    Full Text Available There have been many studies regarding antenna polarization; however, there have been few publications on the analysis of the channel capacity for polarized antenna systems using the beamforming technique. According to Chung et al., the channel capacity is determined by the density of scatterers and the transmission power, which is obtained based on the assumption that scatterers are uniformly distributed on a 3D spherical scattering model. However, it contradicts the practical scenario, where scatterers may not be uniformly distributed under outdoor environment, and lacks the consideration of fading channel gain. In this study, we derive the channel capacity of polarized uniform linear array (PULA systems using the beamforming technique in a practical scattering environment. The results show that, for PULA systems, the channel capacity, which is boosted by beamforming diversity, can be determined using the channel gain, beam radiation pattern, and beamforming diversity order (BDO, where the BDO is dependent on the antenna characteristics and array configurations.

  13. Automated System Tests High-Power MOSFET's

    Science.gov (United States)

    Huston, Steven W.; Wendt, Isabel O.

    1994-01-01

    Computer-controlled system tests metal-oxide/semiconductor field-effect transistors (MOSFET's) at high voltages and currents. Measures seven parameters characterizing performance of MOSFET, with view toward obtaining early indication MOSFET defective. Use of test system prior to installation of power MOSFET in high-power circuit saves time and money.

  14. Improving emission uniformity and linearizing band dispersion in nanowire arrays using quasi-aperiodicity

    Energy Technology Data Exchange (ETDEWEB)

    Anderson, P. Duke [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Univ. of Southern California, Los Angeles, CA (United States). Ming Hsieh Dept. of Electrical Engineering; Koleske, Daniel D. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Povinelli, Michelle L. [Univ. of Southern California, Los Angeles, CA (United States). Ming Hsieh Dept. of Electrical Engineering; Subramania, Ganapathi [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

    2017-10-01

    For this study, we experimentally investigate a new class of quasi-aperiodic structures for improving the emission pattern in nanowire arrays. Efficient normal emission, as well as lasing, can be obtained from III-nitride photonic crystal (PhC) nanowire arrays that utilize slow group velocity modes near the Γ-point in reciprocal space. However, due to symmetry considerations, the emitted far-field pattern of such modes are often ‘donut’-like. Many applications, including lighting for displays or lasers, require a more uniform beam profile in the far-field. Previous work has improved far-field beam uniformity of uncoupled modes by changing the shape of the emitting structure. However, in nanowire systems, the shape of nanowires cannot always be arbitrarily changed due to growth or etch considerations. Here, we investigate breaking symmetry by instead changing the position of emitters. Using a quasi-aperiodic geometry, which changes the emitter position within a photonic crystal supercell (2x2), we are able to linearize the photonic bandstructure near the Γ-point and greatly improve emitted far-field uniformity. We realize the III-nitride nanowires structures using a top-down fabrication procedure that produces nanowires with smooth, vertical sidewalls. Comparison of room-temperature micro-photoluminescence (µ-PL) measurements between periodic and quasi-aperiodic nanowire arrays reveal resonances in each structure, with the simple periodic structure producing a donut beam in the emitted far-field and the quasi-aperiodic structure producing a uniform Gaussian-like beam. We investigate the input pump power vs. output intensity in both systems and observe the simple periodic array exhibiting a non-linear relationship, indicative of lasing. We believe that the quasi-aperiodic approach studied here provides an alternate and promising strategy for shaping the emission pattern of nanoemitter systems.

  15. Investigation of a pulsed current annealing method in reusing MOSFET dosimeters for in vivo IMRT dosimetry

    Energy Technology Data Exchange (ETDEWEB)

    Luo, Guang-Wen; Qi, Zhen-Yu, E-mail: qizhy@sysucc.org.cn; Deng, Xiao-Wu [Department of Radiation Oncology, Sun Yat-Sen University Cancer Center and State Key Laboratory of Oncology in Southern China, Collaborative Innovation Center of Cancer Medicine, Guangzhou 510060 (China); Rosenfeld, Anatoly [Centre for Medical Radiation Physics, University of Wollongong, Wollongong, NSW 2522 (Australia)

    2014-05-15

    Purpose: To explore the feasibility of pulsed current annealing in reusing metal oxide semiconductor field-effect transistor (MOSFET) dosimeters forin vivo intensity modulated radiation therapy (IMRT) dosimetry. Methods: Several MOSFETs were irradiated atd{sub max} using a 6 MV x-ray beam with 5 V on the gate and annealed with zero bias at room temperature. The percentage recovery of threshold voltage shift during multiple irradiation-annealing cycles was evaluated. Key dosimetry characteristics of the annealed MOSFET such as the dosimeter's sensitivity, reproducibility, dose linearity, and linearity of response within the dynamic range were investigated. The initial results of using the annealed MOSFETs for IMRT dosimetry practice were also presented. Results: More than 95% of threshold voltage shift can be recovered after 24-pulse current continuous annealing in 16 min. The mean sensitivity degradation was found to be 1.28%, ranging from 1.17% to 1.52%, during multiple annealing procedures. Other important characteristics of the annealed MOSFET remained nearly consistent before and after annealing. Our results showed there was no statistically significant difference between the annealed MOSFETs and their control samples in absolute dose measurements for IMRT QA (p = 0.99). The MOSFET measurements agreed with the ion chamber results on an average of 0.16% ± 0.64%. Conclusions: Pulsed current annealing provides a practical option for reusing MOSFETs to extend their operational lifetime. The current annealing circuit can be integrated into the reader, making the annealing procedure fully automatic.

  16. Investigation of a pulsed current annealing method in reusing MOSFET dosimeters for in vivo IMRT dosimetry.

    Science.gov (United States)

    Luo, Guang-Wen; Qi, Zhen-Yu; Deng, Xiao-Wu; Rosenfeld, Anatoly

    2014-05-01

    To explore the feasibility of pulsed current annealing in reusing metal oxide semiconductor field-effect transistor (MOSFET) dosimeters for in vivo intensity modulated radiation therapy (IMRT) dosimetry. Several MOSFETs were irradiated at d(max) using a 6 MV x-ray beam with 5 V on the gate and annealed with zero bias at room temperature. The percentage recovery of threshold voltage shift during multiple irradiation-annealing cycles was evaluated. Key dosimetry characteristics of the annealed MOSFET such as the dosimeter's sensitivity, reproducibility, dose linearity, and linearity of response within the dynamic range were investigated. The initial results of using the annealed MOSFETs for IMRT dosimetry practice were also presented. More than 95% of threshold voltage shift can be recovered after 24-pulse current continuous annealing in 16 min. The mean sensitivity degradation was found to be 1.28%, ranging from 1.17% to 1.52%, during multiple annealing procedures. Other important characteristics of the annealed MOSFET remained nearly consistent before and after annealing. Our results showed there was no statistically significant difference between the annealed MOSFETs and their control samples in absolute dose measurements for IMRT QA (p = 0.99). The MOSFET measurements agreed with the ion chamber results on an average of 0.16% ± 0.64%. Pulsed current annealing provides a practical option for reusing MOSFETs to extend their operational lifetime. The current annealing circuit can be integrated into the reader, making the annealing procedure fully automatic.

  17. Investigation of a pulsed current annealing method in reusing MOSFET dosimeters for in vivo IMRT dosimetry

    International Nuclear Information System (INIS)

    Luo, Guang-Wen; Qi, Zhen-Yu; Deng, Xiao-Wu; Rosenfeld, Anatoly

    2014-01-01

    Purpose: To explore the feasibility of pulsed current annealing in reusing metal oxide semiconductor field-effect transistor (MOSFET) dosimeters forin vivo intensity modulated radiation therapy (IMRT) dosimetry. Methods: Several MOSFETs were irradiated atd max using a 6 MV x-ray beam with 5 V on the gate and annealed with zero bias at room temperature. The percentage recovery of threshold voltage shift during multiple irradiation-annealing cycles was evaluated. Key dosimetry characteristics of the annealed MOSFET such as the dosimeter's sensitivity, reproducibility, dose linearity, and linearity of response within the dynamic range were investigated. The initial results of using the annealed MOSFETs for IMRT dosimetry practice were also presented. Results: More than 95% of threshold voltage shift can be recovered after 24-pulse current continuous annealing in 16 min. The mean sensitivity degradation was found to be 1.28%, ranging from 1.17% to 1.52%, during multiple annealing procedures. Other important characteristics of the annealed MOSFET remained nearly consistent before and after annealing. Our results showed there was no statistically significant difference between the annealed MOSFETs and their control samples in absolute dose measurements for IMRT QA (p = 0.99). The MOSFET measurements agreed with the ion chamber results on an average of 0.16% ± 0.64%. Conclusions: Pulsed current annealing provides a practical option for reusing MOSFETs to extend their operational lifetime. The current annealing circuit can be integrated into the reader, making the annealing procedure fully automatic

  18. Characterization of responses and comparison of calibration factor for commercial MOSFET detectors.

    Science.gov (United States)

    Bharanidharan, Ganesan; Manigandan, Durai; Devan, Krishnamurthy; Subramani, Vellaiyan; Gopishankar, Natanasabapathi; Ganesh, Tharmar; Joshi, Rakeshchander; Rath, Gourakishore; Velmurugan, Jagadeesan; Aruna, Prakasarao; Ganesan, Singaravelu

    2005-01-01

    A commercial metal oxide silicon field effect transistor (MOSFET) dosimeter of model TN502-RD has been characterized for its linearity, reproducibility, field size dependency, dose rate dependency, and angular dependency for Cobalt-60 (60Co), 6-MV, and 15-MV beam energies. The performance of the MOSFET clearly shows that it is highly reproducible, independent of field size and dose rate. Furthermore, MOSFET has a very high degree of linearity, with r-value>0.9 for all 3 energies. The calibration factor for 2 similar MOSFET detectors of model TN502-RD were also estimated and compared for all 3 energies. The calibration factor between the 2 similar MOSFET detectors shows a variation of about 1.8% for 60Co and 15 MV, and for 6 MV it shows variation of about 2.5%, indicating that calibration should be done whenever a new MOSFET is used. However, the detector shows considerable angular dependency of about 8.8% variation. This may be due to the variation in radiation sensitivity between flat and bubble sides of the MOSFET, and indicates that positional care must be taken while using MOSFET for stereotactic radiosurgery and stereotactic radiotherapy dosimetric applications.

  19. JMOSFET: A MOSFET parameter extractor with geometry-dependent terms

    Science.gov (United States)

    Buehler, M. G.; Moore, B. T.

    1985-01-01

    The parameters from metal-oxide-silicon field-effect transistors (MOSFETs) that are included on the Combined Release and Radiation Effects Satellite (CRRES) test chips need to be extracted to have a simple but comprehensive method that can be used in wafer acceptance, and to have a method that is sufficiently accurate that it can be used in integrated circuits. A set of MOSFET parameter extraction procedures that are directly linked to the MOSFET model equations and that facilitate the use of simple, direct curve-fitting techniques are developed. In addition, the major physical effects that affect MOSFET operation in the linear and saturation regions of operation for devices fabricated in 1.2 to 3.0 mm CMOS technology are included. The fitting procedures were designed to establish single values for such parameters as threshold voltage and transconductance and to provide for slope matching between the linear and saturation regions of the MOSFET output current-voltage curves. Four different sizes of transistors that cover a rectangular-shaped region of the channel length-width plane are analyzed.

  20. Mixed Linear/Square-Root Encoded Single Slope Ramp Provides a Fast, Low Noise Analog to Digital Converter with Very High Linearity for Focal Plane Arrays

    Science.gov (United States)

    Wrigley, Christopher James (Inventor); Hancock, Bruce R. (Inventor); Newton, Kenneth W. (Inventor); Cunningham, Thomas J. (Inventor)

    2014-01-01

    An analog-to-digital converter (ADC) converts pixel voltages from a CMOS image into a digital output. A voltage ramp generator generates a voltage ramp that has a linear first portion and a non-linear second portion. A digital output generator generates a digital output based on the voltage ramp, the pixel voltages, and comparator output from an array of comparators that compare the voltage ramp to the pixel voltages. A return lookup table linearizes the digital output values.

  1. Commissioning and characteristics of MOSFET dosimeter

    International Nuclear Information System (INIS)

    Gopiraj, A.; Billimagga, Ramesh S.; Rekha, M.; Ramasubramaniam, V.

    2007-01-01

    The verification of the dose delivered to a patient is an important part of the quality assurance in radiotherapy. Thermoluminescent dosimeters (TLDs) and semiconductor diodes were mostly used for this purpose. Recently Metal Oxide Semiconductor field effect transistors (MOSFET) have been proposed for the application in radiotherapy. Each type of detector has its own advantages and disadvantages. The TLD size is very small and therefore can be used both for measurement and dose delivered to a patient and for measurements of dose distribution in a humanoid phantom. The main disadvantages of the TLDs are the time required by the preparation procedure and the limited accuracy which depends on the experience of the user. Additionally, TLDs do not allow an immediate readout. The main disadvantages of semiconductor diodes are the necessity of using a cable which can disturb normal clinical work especially when in vivo measurements are carried out, and the necessity of applying of many correction factors to achieve high accuracy. We procured MOSFET system from Thomson and Nielsen Electronic Ltd. The reproducibility as a function of dose and linearity and calibration factor of the MOSFET detectors were measured. The effects of energy, field size and accumulated dose on the response of the detectors were investigated

  2. Characterization and linear array LA48 Commissioner for measuring the position of the multi leaf collimator

    International Nuclear Information System (INIS)

    Conles Picos, I.; Cenizo de Castro, E.; Aparicio martin, A. R.; Barrio Lazo, F.; Cesteros Morante, M. J.

    2011-01-01

    The protocol of Quality Control of electron accelerators for medical use of SEFM proposed for multi leaf collimation system (MLC) to verify the positioning of the blades connect. To do this you must find a system with sufficient accuracy and precision and, if possible, easy to assemble and offers real-time results. One of these teams is the Linear Array of PTW-Freiburg (LA48), which consists of a row of 47 ionization chambers, of 0008 cc and 8 mm apart from each other. In this paper, we describe our process of characterization and LA48 commissioner. (Author)

  3. A Multibeam Dual-Band Orthogonal Linearly Polarized Antenna Array for Satellite Communication on the Move

    Directory of Open Access Journals (Sweden)

    Yi Liu

    2015-01-01

    Full Text Available The design and simulation of a 10 × 8 multibeam dual-band orthogonal linearly polarized antenna array operating at Ku-band are presented for transmit-receive applications. By using patches with different coupling methods as elements, both perpendicular polarization in 12.25–12.75 GHz band and horizontal polarization in 14.0–14.5 GHz band are realized in a shared antenna aperture. A microstrip Rotman lens is employed as the beamforming network with 7 input ports, which can generate a corresponding number of beams to cover −30°–30° with 5 dB beamwidth along one dimension. This type of multibeam orthogonal linearly polarized planar antenna is a good candidate for satellite communication (SatCom.

  4. SU-E-T-749: Thorough Calibration of MOSFET Dosimeters

    International Nuclear Information System (INIS)

    Plenkovich, D; Thomas, J

    2015-01-01

    Purpose: To improve the accuracy of the MOSFET calibration procedure by performing the measurement several times and calculating the average value of the calibration factor for various photon and electron energies. Methods: The output of three photon and six electron beams of Varian Trilogy linear accelerator SN 5878 was calibrated. Five reinforced standard sensitivity MOSFET dosimeters were placed in the calibration jig and connected to the Reader Module. As the backscatter material was used 7 cm of Virtual Water. The MOSFET dosimeters were covered with 1.5 cm thick bolus for the regular and SRS 6 MV beams, 3 cm bolus for 15 MV beam, 1.5 cm bolus for 6 MeV electron beam, and 2 cm bolus for the electron energies of 9, 12, 15, 18, and 22 MeV. The dosimeters were exposed to 100 MU, and the calibration factor was determined using the mobileMOSFET software. To improve the accuracy of calibration, this procedure was repeated ten times and the calibration factors were averaged. Results: As the number of calibrations was increasing the variability of calibration factors of different dosimeters was decreasing. After ten calibrations, the calibration factors for all five dosimeters were within 1% of one another for all energies, except 6 MV SRS photons and 6 MeV electrons, for which the variability was 2%. Conclusions: The described process results in calibration factors which are almost independent of modality or energy. Once calibrated, the dosimeters may be used for in-vivo dosimetry or for daily verification of the beam output. Measurement of the radiation dose under bolus and scatter to the eye are examples of frequent use of calibrated MOSFET dosimeters. The calibration factor determined for full build-up is used under these circumstances. To the best of our knowledge, such thorough procedure for calibrating MOSFET dosimeters has not been reported previously. Best Medical Canada provided MOSFET dosimeters for this project

  5. MOSFET Power Controller

    Science.gov (United States)

    Mitchell, J.; Jones, K.

    1986-01-01

    High current and voltage controlled remotely. Remote Power Conroller includes two series-connected banks of parallel-connected MOSFET's to withstand high current and voltage. Voltage sharing between switch banks, low-impedance, gate-drive circuits used. Provided controlled range for turn on. Individually trimmable to insure simultaneous switching within few nanoseconds during both turn on and turn off. Control circuit for each switch bank and over-current trip circuit float independently and supplied power via transformer T1 from inverter. Control of floating stages by optocouplers.

  6. Dynamic wedge, electron energy and beam profile Q.A. using an ionization chamber linear array

    International Nuclear Information System (INIS)

    Kenny, M.B.; Todd, S.P.

    1996-01-01

    Since the introduction of multi-modal linacs the quality assurance workload of a Physical Sciences department has increased dramatically. The advent of dynamic wedges has further complicated matters because of the need to invent accurate methods to perform Q.A. in a reasonable time. We have been using an ionization chamber linear array, the Thebes 7000 TM by Victoreen, Inc., for some years to measure X-ray and electron beam profiles. Two years ago we developed software to perform Q.A. on our dynamic wedges using the array and more recently included a routine to check electron beam energies using the method described by Rosenow, U.F. et al., Med. Phys. 18(1) 19-25. The integrated beam and profile management system has enabled us to maintain a comprehensive quality assurance programme on all our linaccs. Both our efficiency and accuracy have increased to the point where we are able to keep up with the greater number of tests required without an increase in staff or hours spent in quality assurance. In changing the processor from the Z80 of the Thebes console to the 486 of the PC we have also noticed a marked increase in the calibration stability of the array. (author)

  7. Choosing processor array configuration by performance modeling for a highly parallel linear algebra algorithm

    International Nuclear Information System (INIS)

    Littlefield, R.J.; Maschhoff, K.J.

    1991-04-01

    Many linear algebra algorithms utilize an array of processors across which matrices are distributed. Given a particular matrix size and a maximum number of processors, what configuration of processors, i.e., what size and shape array, will execute the fastest? The answer to this question depends on tradeoffs between load balancing, communication startup and transfer costs, and computational overhead. In this paper we analyze in detail one algorithm: the blocked factored Jacobi method for solving dense eigensystems. A performance model is developed to predict execution time as a function of the processor array and matrix sizes, plus the basic computation and communication speeds of the underlying computer system. In experiments on a large hypercube (up to 512 processors), this model has been found to be highly accurate (mean error ∼ 2%) over a wide range of matrix sizes (10 x 10 through 200 x 200) and processor counts (1 to 512). The model reveals, and direct experiment confirms, that the tradeoffs mentioned above can be surprisingly complex and counterintuitive. We propose decision procedures based directly on the performance model to choose configurations for fastest execution. The model-based decision procedures are compared to a heuristic strategy and shown to be significantly better. 7 refs., 8 figs., 1 tab

  8. Magnetic Flux Distribution of Linear Machines with Novel Three-Dimensional Hybrid Magnet Arrays

    Directory of Open Access Journals (Sweden)

    Nan Yao

    2017-11-01

    Full Text Available The objective of this paper is to propose a novel tubular linear machine with hybrid permanent magnet arrays and multiple movers, which could be employed for either actuation or sensing technology. The hybrid magnet array produces flux distribution on both sides of windings, and thus helps to increase the signal strength in the windings. The multiple movers are important for airspace technology, because they can improve the system’s redundancy and reliability. The proposed design concept is presented, and the governing equations are obtained based on source free property and Maxwell equations. The magnetic field distribution in the linear machine is thus analytically formulated by using Bessel functions and harmonic expansion of magnetization vector. Numerical simulation is then conducted to validate the analytical solutions of the magnetic flux field. It is proved that the analytical model agrees with the numerical results well. Therefore, it can be utilized for the formulation of signal or force output subsequently, depending on its particular implementation.

  9. Ultrasound pulse-echo measurements on rough surfaces with linear array transducers

    DEFF Research Database (Denmark)

    Sjøj, Sidsel M. N.; Blanco, Esther N.; Wilhjelm, Jens E.

    2012-01-01

    The echo from planar surfaces with rms roughness, Rq, in the range from 0-155 μm was measured with a clinical linear array transducer at different angles of incidence at 6 MHz and 12 MHz. The echo-pulse from the surfaces was isolated with an equal sized window and the power of the echo-pulse was ......The echo from planar surfaces with rms roughness, Rq, in the range from 0-155 μm was measured with a clinical linear array transducer at different angles of incidence at 6 MHz and 12 MHz. The echo-pulse from the surfaces was isolated with an equal sized window and the power of the echo......-pulse was calculated. The power of the echo from the smooth surface (Rq = 0) is highly angle-dependent due to a high degree of specular reflection. Within the angular range considered here, -10° to 10°, the variation spans a range of 18 dB at both 6 MHz and 12 MHz. When roughness increases, the angle......-dependence decreases, as the echo process gradually changes from pure reflection to being predominantly governed by backscattering. The power of the echoes from the two roughest surfaces (Rq = 115 μm and 155 μm) are largely independent of angle at both 6 MHz and 12 MHz with a variation of 2 dB in the angular range...

  10. Characteristics of mobile MOSFET dosimetry system for megavoltage photon beams.

    Science.gov (United States)

    Kumar, A Sathish; Sharma, S D; Ravindran, B Paul

    2014-07-01

    The characteristics of a mobile metal oxide semiconductor field effect transistor (mobile MOSFET) detector for standard bias were investigated for megavoltage photon beams. This study was performed with a brass alloy build-up cap for three energies namely Co-60, 6 and 15 MV photon beams. The MOSFETs were calibrated and the performance characteristics were analyzed with respect to dose rate dependence, energy dependence, field size dependence, linearity, build-up factor, and angular dependence for all the three energies. A linear dose-response curve was noted for Co-60, 6 MV, and 15 MV photons. The calibration factors were found to be 1.03, 1, and 0.79 cGy/mV for Co-60, 6 MV, and 15 MV photon energies, respectively. The calibration graph has been obtained to the dose up to 600 cGy, and the dose-response curve was found to be linear. The MOSFETs were found to be energy independent both for measurements performed at depth as well as on the surface with build-up. However, field size dependence was also analyzed for variable field sizes and found to be field size independent. Angular dependence was analyzed by keeping the MOSFET dosimeter in parallel and perpendicular orientation to the angle of incidence of the radiation with and without build-up on the surface of the phantom. The maximum variation for the three energies was found to be within ± 2% for the gantry angles 90° and 270°, the deviations without the build-up for the same gantry angles were found to be 6%, 25%, and 60%, respectively. The MOSFET response was found to be independent of dose rate for all three energies. The dosimetric characteristics of the MOSFET detector make it a suitable in vivo dosimeter for megavoltage photon beams.

  11. Linear Array Ambient Noise Adjoint Tomography Reveals Intense Crust-Mantle Interactions in North China Craton

    Science.gov (United States)

    Zhang, Chao; Yao, Huajian; Liu, Qinya; Zhang, Ping; Yuan, Yanhua O.; Feng, Jikun; Fang, Lihua

    2018-01-01

    We present a 2-D ambient noise adjoint tomography technique for a linear array with a significant reduction in computational cost and show its application to an array in North China. We first convert the observed data for 3-D media, i.e., surface-wave empirical Green's functions (EGFs) to the reconstructed EGFs (REGFs) for 2-D media using a 3-D/2-D transformation scheme. Different from the conventional steps of measuring phase dispersion, this technology refines 2-D shear wave speeds along the profile directly from REGFs. With an initial model based on traditional ambient noise tomography, adjoint tomography updates the model by minimizing the frequency-dependent Rayleigh wave traveltime delays between the REGFs and synthetic Green functions calculated by the spectral-element method. The multitaper traveltime difference measurement is applied in four-period bands: 20-35 s, 15-30 s, 10-20 s, and 6-15 s. The recovered model shows detailed crustal structures including pronounced low-velocity anomalies in the lower crust and a gradual crust-mantle transition zone beneath the northern Trans-North China Orogen, which suggest the possible intense thermo-chemical interactions between mantle-derived upwelling melts and the lower crust, probably associated with the magmatic underplating during the Mesozoic to Cenozoic evolution of this region. To our knowledge, it is the first time that ambient noise adjoint tomography is implemented for a 2-D medium. Compared with the intensive computational cost and storage requirement of 3-D adjoint tomography, this method offers a computationally efficient and inexpensive alternative to imaging fine-scale crustal structures beneath linear arrays.

  12. Shift of the Acoustic Center of a Closed-Box Loudspeaker in a Linear Array: Investigation Using the Beamforming Technique

    DEFF Research Database (Denmark)

    Chang, Ji-Ho; Jensen, Joe; Agerkvist, Finn T.

    2015-01-01

    The center of the spherical waves radiated from a loudspeaker is defined as its acoustic center. This study aims to investigate how the acoustic center of a closed-box loudspeaker is shifted when the loudspeaker is placed in a linear array. That is, the acoustic center of the loudspeaker is estim......The center of the spherical waves radiated from a loudspeaker is defined as its acoustic center. This study aims to investigate how the acoustic center of a closed-box loudspeaker is shifted when the loudspeaker is placed in a linear array. That is, the acoustic center of the loudspeaker...... is estimated when the loudspeaker is placed alone and then the loudspeaker is placed in a linear array composed of two or three identical loudspeakers. The acoustic center of each loudspeaker in the linear arrays is estimated with the other loudspeakers turned off and compared with that in the single...... that the acoustic center is shifted differently depending on the relative position of the loudspeaker in the array. This implies that the performance of sound field control with a linear array of loudspeakers can be improved by taking the shift of the acoustic center into account....

  13. Assessment of low absorbed dose with a MOSFET detector

    International Nuclear Information System (INIS)

    Butson, M.J.; Cancer Services, Wollongong, NSW; Cheung, T.; Yu, P.K.N.

    2004-01-01

    Full text: The ability of a MOSFET dosimetry system to measure low therapeutic doses has been evaluated for accuracy for high energy x-ray radiotherapy applications. The MOSFET system in high sensitivity mode produces a dose measurement reproducibility of within 10%, 4% and 2.5% for 2 cGy, 5 cGy and 10cGy dose assessment respectively. This is compared to 7%, 4% and 2% for an Attix parallel plate ionisation chamber and 20%, 7% and 3.5% for a Wellhofer IC4 small volume ionisation chamber. Results for our dose standard thimble ionisation chamber and low noise farmer dosemeter were 2%, 0.5% and 0.25% respectively for these measurements. The quoted accuracy of the MOSFET dosimetry system is partially due to the slight non linear dose response (reduced response) with age of the detector but mainly due to the intrinsic variations in measured voltage differential per applied dose. Results have shown that the MOSFET dosimetry system provides an adequate measure of dose at low dose levels and is comparable in accuracy to the Attix parallel plate ionisation chambers for relative dose assessment at levels of 2cGy to 10cGy. The use of the MOSFET dosimeter at low doses can extend the life expectancy of the device and may provide useful information for areas where low dose assessment is required. Copyright (2004) Australasian College of Physical Scientists and Engineers in Medicine

  14. A CMOS 128-APS linear array integrated with a LVOF for highsensitivity and high-resolution micro-spectrophotometry

    NARCIS (Netherlands)

    Liu, C.; Emadi, A.; Wu, H.; De Graaf, G.; Wolffenbuttel, R.F.

    2010-01-01

    A linear array of 128 Active Pixel Sensors has been developed in standard CMOS technology and a Linear Variable Optical Filter (LVOF) is added using CMOS-compatible post-process, resulting in a single chip highly-integrated highresolution microspectrometer. The optical requirements imposed by the

  15. Design Methodology of a Dual-Halbach Array Linear Actuator with Thermal-Electromagnetic Coupling.

    Science.gov (United States)

    Eckert, Paulo Roberto; Flores Filho, Aly Ferreira; Perondi, Eduardo; Ferri, Jeferson; Goltz, Evandro

    2016-03-11

    This paper proposes a design methodology for linear actuators, considering thermal and electromagnetic coupling with geometrical and temperature constraints, that maximizes force density and minimizes force ripple. The method allows defining an actuator for given specifications in a step-by-step way so that requirements are met and the temperature within the device is maintained under or equal to its maximum allowed for continuous operation. According to the proposed method, the electromagnetic and thermal models are built with quasi-static parametric finite element models. The methodology was successfully applied to the design of a linear cylindrical actuator with a dual quasi-Halbach array of permanent magnets and a moving-coil. The actuator can produce an axial force of 120 N and a stroke of 80 mm. The paper also presents a comparative analysis between results obtained considering only an electromagnetic model and the thermal-electromagnetic coupled model. This comparison shows that the final designs for both cases differ significantly, especially regarding its active volume and its electrical and magnetic loading. Although in this paper the methodology was employed to design a specific actuator, its structure can be used to design a wide range of linear devices if the parametric models are adjusted for each particular actuator.

  16. MOSFET Electric-Charge Sensor

    Science.gov (United States)

    Robinson, Paul A., Jr.

    1988-01-01

    Charged-particle probe compact and consumes little power. Proposed modification enables metal oxide/semiconductor field-effect transistor (MOSFET) to act as detector of static electric charges or energetic charged particles. Thickened gate insulation acts as control structure. During measurements metal gate allowed to "float" to potential of charge accumulated in insulation. Stack of modified MOSFET'S constitutes detector of energetic charged particles. Each gate "floats" to potential induced by charged-particle beam penetrating its layer.

  17. Linear array of photodiodes to track a human speaker for video recording

    International Nuclear Information System (INIS)

    DeTone, D; Neal, H; Lougheed, R

    2012-01-01

    Communication and collaboration using stored digital media has garnered more interest by many areas of business, government and education in recent years. This is due primarily to improvements in the quality of cameras and speed of computers. An advantage of digital media is that it can serve as an effective alternative when physical interaction is not possible. Video recordings that allow for viewers to discern a presenter's facial features, lips and hand motions are more effective than videos that do not. To attain this, one must maintain a video capture in which the speaker occupies a significant portion of the captured pixels. However, camera operators are costly, and often do an imperfect job of tracking presenters in unrehearsed situations. This creates motivation for a robust, automated system that directs a video camera to follow a presenter as he or she walks anywhere in the front of a lecture hall or large conference room. Such a system is presented. The system consists of a commercial, off-the-shelf pan/tilt/zoom (PTZ) color video camera, a necklace of infrared LEDs and a linear photodiode array detector. Electronic output from the photodiode array is processed to generate the location of the LED necklace, which is worn by a human speaker. The computer controls the video camera movements to record video of the speaker. The speaker's vertical position and depth are assumed to remain relatively constant– the video camera is sent only panning (horizontal) movement commands. The LED necklace is flashed at 70Hz at a 50% duty cycle to provide noise-filtering capability. The benefit to using a photodiode array versus a standard video camera is its higher frame rate (4kHz vs. 60Hz). The higher frame rate allows for the filtering of infrared noise such as sunlight and indoor lighting–a capability absent from other tracking technologies. The system has been tested in a large lecture hall and is shown to be effective.

  18. Linear array of photodiodes to track a human speaker for video recording

    Science.gov (United States)

    DeTone, D.; Neal, H.; Lougheed, R.

    2012-12-01

    Communication and collaboration using stored digital media has garnered more interest by many areas of business, government and education in recent years. This is due primarily to improvements in the quality of cameras and speed of computers. An advantage of digital media is that it can serve as an effective alternative when physical interaction is not possible. Video recordings that allow for viewers to discern a presenter's facial features, lips and hand motions are more effective than videos that do not. To attain this, one must maintain a video capture in which the speaker occupies a significant portion of the captured pixels. However, camera operators are costly, and often do an imperfect job of tracking presenters in unrehearsed situations. This creates motivation for a robust, automated system that directs a video camera to follow a presenter as he or she walks anywhere in the front of a lecture hall or large conference room. Such a system is presented. The system consists of a commercial, off-the-shelf pan/tilt/zoom (PTZ) color video camera, a necklace of infrared LEDs and a linear photodiode array detector. Electronic output from the photodiode array is processed to generate the location of the LED necklace, which is worn by a human speaker. The computer controls the video camera movements to record video of the speaker. The speaker's vertical position and depth are assumed to remain relatively constant- the video camera is sent only panning (horizontal) movement commands. The LED necklace is flashed at 70Hz at a 50% duty cycle to provide noise-filtering capability. The benefit to using a photodiode array versus a standard video camera is its higher frame rate (4kHz vs. 60Hz). The higher frame rate allows for the filtering of infrared noise such as sunlight and indoor lighting-a capability absent from other tracking technologies. The system has been tested in a large lecture hall and is shown to be effective.

  19. Design and optimization of multi-class series-parallel linear electromagnetic array artificial muscle.

    Science.gov (United States)

    Li, Jing; Ji, Zhenyu; Shi, Xuetao; You, Fusheng; Fu, Feng; Liu, Ruigang; Xia, Junying; Wang, Nan; Bai, Jing; Wang, Zhanxi; Qin, Xiansheng; Dong, Xiuzhen

    2014-01-01

    Skeletal muscle exhibiting complex and excellent precision has evolved for millions of years. Skeletal muscle has better performance and simpler structure compared with existing driving modes. Artificial muscle may be designed by analyzing and imitating properties and structure of skeletal muscle based on bionics, which has been focused on by bionic researchers, and a structure mode of linear electromagnetic array artificial muscle has been designed in this paper. Half sarcomere is the minimum unit of artificial muscle and electromagnetic model has been built. The structural parameters of artificial half sarcomere actuator were optimized to achieve better movement performance. Experimental results show that artificial half sarcomere actuator possesses great motion performance such as high response speed, great acceleration, small weight and size, robustness, etc., which presents a promising application prospect of artificial half sarcomere actuator.

  20. Innervation zones of fasciculating motor units: observations by a linear electrode array.

    Science.gov (United States)

    Jahanmiri-Nezhad, Faezeh; Barkhaus, Paul E; Rymer, William Z; Zhou, Ping

    2015-01-01

    This study examines the innervation zone (IZ) in the biceps brachii muscle in healthy subjects and those with amyotrophic lateral sclerosis (ALS) using a 20-channel linear electromyogram (EMG) electrode array. Raster plots of individual waveform potentials were studied to estimate the motor unit IZ. While this work mainly focused on fasciculation potentials (FPs), a limited number of motor unit potentials (MUPs) from voluntary activity of 12 healthy and seven ALS subjects were also examined. Abnormal propagation of MUPs and scattered IZs were observed in fasciculating units, compared with voluntarily activated MUPs in healthy and ALS subjects. These findings can be related to muscle fiber reinnervation following motor neuron degeneration in ALS and the different origin sites of FPs compared with voluntary MUPs.

  1. Enhanced 2D-DOA Estimation for Large Spacing Three-Parallel Uniform Linear Arrays

    Directory of Open Access Journals (Sweden)

    Dong Zhang

    2018-01-01

    Full Text Available An enhanced two-dimensional direction of arrival (2D-DOA estimation algorithm for large spacing three-parallel uniform linear arrays (ULAs is proposed in this paper. Firstly, we use the propagator method (PM to get the highly accurate but ambiguous estimation of directional cosine. Then, we use the relationship between the directional cosine to eliminate the ambiguity. This algorithm not only can make use of the elements of the three-parallel ULAs but also can utilize the connection between directional cosine to improve the estimation accuracy. Besides, it has satisfied estimation performance when the elevation angle is between 70° and 90° and it can automatically pair the estimated azimuth and elevation angles. Furthermore, it has low complexity without using any eigen value decomposition (EVD or singular value decompostion (SVD to the covariance matrix. Simulation results demonstrate the effectiveness of our proposed algorithm.

  2. Electromagnetic Linear Vibration Energy Harvester Using Sliding Permanent Magnet Array and Ferrofluid as a Lubricant

    Directory of Open Access Journals (Sweden)

    Song Hee Chae

    2017-09-01

    Full Text Available We present an electromagnetic linear vibration energy harvester with an array of rectangular permanent magnets as a springless proof mass. Instead of supporting the magnet assembly with spring element, ferrofluid has been used as a lubricating material. When external vibration is applied laterally to the harvester, magnet assembly slides back and forth on the channel with reduced friction and wear due to ferrofluid, which significantly improves the long-term reliability of the device. Electric power is generated across an array of copper windings formed at the bottom of the aluminum housing. A proof-of-concept harvester has been fabricated and tested with a vibration exciter at various input frequencies and accelerations. For the device where 5 μL of ferrofluid was used for lubrication, maximum output power of 493 μW has been generated, which was 4.37% higher than that without ferrofluid. Long-term reliability improvement due to ferrofluid lubrication has also been verified. For the device with ferrofluid, 1.02% decrease of output power has been observed, in contrast to 59.73% decrease of output power without ferrofluid after 93,600 cycles.

  3. Development and operation of a pixel segmented liquid-filled linear array for radiotherapy quality assurance

    Energy Technology Data Exchange (ETDEWEB)

    Pardo, J [Departamento de Fisica de Particulas, Facultade de Fisica, 15782 Santiago de Compostela (Spain); Franco, L [Departamento de Fisica de Particulas, Facultade de Fisica, 15782 Santiago de Compostela (Spain); Gomez, F [Departamento de Fisica de Particulas, Facultade de Fisica, 15782 Santiago de Compostela (Spain); Iglesias, A [Departamento de Fisica de Particulas, Facultade de Fisica, 15782 Santiago de Compostela (Spain); Pazos, A [Departamento de Fisica de Particulas, Facultade de Fisica, 15782 Santiago de Compostela (Spain); Pena, J [Departamento de Fisica de Particulas, Facultade de Fisica, 15782 Santiago de Compostela (Spain); Lobato, R [Hospital Clinico Universitario de Santiago, Santiago (Spain); Mosquera, J [Hospital Clinico Universitario de Santiago, Santiago (Spain); Pombar, M [Hospital Clinico Universitario de Santiago, Santiago (Spain); Sendon, J [Hospital Clinico Universitario de Santiago, Santiago (Spain)

    2005-04-21

    A liquid isooctane (C{sub 8}H{sub 18}) filled ionization linear array for radiotherapy quality assurance has been designed, built and tested. The detector consists of 128 pixels, each of them with an area of 1.7 mm x 1.7 mm and a gap of 0.5 mm. The small pixel size makes the detector ideal for high gradient beam profiles such as those present in intensity modulated radiation therapy (IMRT) and radiosurgery. As the read-out electronics we use the X-ray Data Acquisition System with the Xchip developed by the CCLRC. Studies concerning the collection efficiency dependence on the polarization voltage and on the dose rate have been made in order to optimize the device operation. In the first tests, we have studied dose rate and energy dependences. Dose rate dependence was found to be lower than 2.1% up to 5 Gy min{sup -1}, and energy dependence lower than 2.5% up to 20 cm depth in solid water. Output factors and penumbras for several rectangular fields have been measured with the linear array and were compared with the results obtained with a 0.125 cm{sup 3} air ionization chamber and radiographic film, respectively. Finally, we have acquired profiles for an IMRT field and for a virtual wedge. These profiles have also been compared with radiographic film measurements. All the comparisons show a good correspondence. The device has proved its capability to verify on-line therapy beams with good spatial resolution and signal-to-noise ratio.

  4. Development and operation of a pixel segmented liquid-filled linear array for radiotherapy quality assurance

    International Nuclear Information System (INIS)

    Pardo, J; Franco, L; Gomez, F; Iglesias, A; Pazos, A; Pena, J; Lobato, R; Mosquera, J; Pombar, M; Sendon, J

    2005-01-01

    A liquid isooctane (C 8 H 18 ) filled ionization linear array for radiotherapy quality assurance has been designed, built and tested. The detector consists of 128 pixels, each of them with an area of 1.7 mm x 1.7 mm and a gap of 0.5 mm. The small pixel size makes the detector ideal for high gradient beam profiles such as those present in intensity modulated radiation therapy (IMRT) and radiosurgery. As the read-out electronics we use the X-ray Data Acquisition System with the Xchip developed by the CCLRC. Studies concerning the collection efficiency dependence on the polarization voltage and on the dose rate have been made in order to optimize the device operation. In the first tests, we have studied dose rate and energy dependences. Dose rate dependence was found to be lower than 2.1% up to 5 Gy min -1 , and energy dependence lower than 2.5% up to 20 cm depth in solid water. Output factors and penumbras for several rectangular fields have been measured with the linear array and were compared with the results obtained with a 0.125 cm 3 air ionization chamber and radiographic film, respectively. Finally, we have acquired profiles for an IMRT field and for a virtual wedge. These profiles have also been compared with radiographic film measurements. All the comparisons show a good correspondence. The device has proved its capability to verify on-line therapy beams with good spatial resolution and signal-to-noise ratio

  5. Performance study of monochromatic synchrotron X-ray computed tomography using a linear array detector

    Energy Technology Data Exchange (ETDEWEB)

    Kazama, Masahiro; Takeda, Tohoru; Itai, Yuji [Tsukuba Univ., Ibaraki (Japan). Inst. of Clinical Medicine; Akiba, Masahiro; Yuasa, Tetsuya; Hyodo, Kazuyuki; Ando, Masami; Akatsuka, Takao

    1997-09-01

    Monochromatic x-ray computed tomography (CT) using synchrotron radiation (SR) is being developed for detection of non-radioactive contrast materials at low concentration for application in clinical diagnosis. A new SR-CT system with improved contrast resolution, was constructed using a linear array detector which provides wide dynamic ranges and a double monochromator. The performance of this system was evaluated in a phantom and a rat model of brain ischemia. This system consists of a silicon (111) double crystal monochromator, an x-ray shutter, an ionization chamber, x-ray slits, a scanning table for the target organ, and an x-ray linear array detector. The research was carried out at the BLNE-5A bending magnet beam line of the Tristan Accumulation Ring in KEK, Japan. In this experiment, the reconstructed image of the spatial-resolution phantom clearly showed the 1 mm holes. At 1 mm slice thickness, the above K-edge image of the phantom showed contrast resolution at the concentration of 200 {mu}g/ml iodine-based contrast materials whereas the K-edge energy subtraction image showed contrast resolution at the concentration of 500 {mu}g/ml contrast materials. The cerebral arteries filled with iodine microspheres were clearly revealed, and the ischemic regions at the right temporal lobe and frontal lobe were depicted as non-vascular regions. The measured minimal detectable concentration of iodine on the above K-edge image is about 6 times higher than the expected value of 35.3 {mu}g/ml because of the high dark current of this detector. Thus, the use of a CCD detector which is cooled by liquid nitrogen to improve the dynamic range of the detector, is being under construction. (author)

  6. A new spin-functional MOSFET based on magnetic tunnel junction technology: pseudo-spin-MOSFET

    OpenAIRE

    Shuto, Yusuke; Nakane, Ryosho; Wang, Wenhong; Sukegawa, Hiroaki; Yamamoto, Shuu'ichirou; Tanaka, Masaaki; Inomata, Koichiro; Sugahara, Satoshi

    2009-01-01

    We fabricated and characterized a new spin-functional MOSFET referred to as a pseudo-spin-MOSFET (PS-MOSFET). The PS-MOSFET is a circuit using an ordinary MOSFET and magnetic tunnel junction (MTJ) for reproducing functions of spin-transistors. Device integration techniques for a bottom gate MOSFET using a silicon-on-insulator (SOI) substrate and for an MTJ with a full-Heusler alloy electrode and MgO tunnel barrier were developed. The fabricated PS-MOSFET exhibited high and low transconductanc...

  7. Characteristics and performance of a micro-MOSFET: An 'imageable' dosimeter for image-guided radiotherapy

    International Nuclear Information System (INIS)

    Rowbottom, Carl G.; Jaffray, David A.

    2004-01-01

    The performance and characteristics of a miniature metal oxide semiconductor field effect transistor (micro-MOSFET) detector was investigated for its potential application to integral system tests for image-guided radiotherapy. In particular, the position of peak response to a slit of radiation was determined for the three principal axes to define the co-ordinates for the center of the active volume of the detector. This was compared to the radiographically determined center of the micro-MOSFET visible using cone-beam CT. Additionally, the angular sensitivity of the micro-MOSFET was measured. The micro-MOSFETs are clearly visible on the cone-beam CT images, and produce no artifacts. The center of the active volume of the micro-MOSFET aligned with the center of the visible micro-MOSFET on the cone-beam CT images for the x and y axes to within 0.20 mm and 0.15 mm, respectively. In z, the long axis of the detector, the peak response was found to be 0.79 mm from the tip of the visible micro-MOSFET. Repeat experiments verified that the position of the peak response of the micro-MOSFET was reproducible. The micro-MOSFET response for 360 deg. of rotation in the axial plane to the micro-MOSFET was ±2%, consistent with values quoted by the manufacturer. The location of the active volume of the micro-MOSFETs under investigation can be determined from the centroid of the visible micro-MOSFET on cone-beam CT images. The CT centroid position corresponds closely to the center of the detector response to radiation. The ability to use the cone-beam CT to locate the active volume to within 0.20 mm allows their use in an integral system test for the imaging of and dose delivery to a phantom containing an array of micro-MOSFETs. The small angular sensitivity allows the investigation of noncoplanar beams

  8. Bearing Estimation Using Double Frequency Reassignment for a Linear Passive Array

    Directory of Open Access Journals (Sweden)

    Czarnecki Krzysztof

    2017-09-01

    Full Text Available The paper demonstrates the use of frequency reassignment for bearing estimation. For this task, signals derived from a linear equispaced passive array are used. The presented method makes use of Fourier transformation based spatial spectrum estimation. It is further developed through the application of two-dimensional reassignment, which leads to obtaining highly concentrated energy distributions in the joint frequency-angle domain and sharp graphical imaging. The introduced method can be used for analysing, a priori, unknown signals of broadband, nonstationary, and/or multicomponent type. For such signals, the direction of arrival is obtained based upon the marginal energy distribution in the angle domain, through searching for arguments of its maxima. In the paper, bearing estimation of three popular types of sonar pulses, including linear and hyperbolic frequency modulated pulses, as well as no frequency modulation at all, is considered. The results of numerical experiments performed in the presence of additive white Gaussian noise are presented and compared to conventional digital sum-delay beamforming performed in the time domain. The root-mean-square error and the peak-to-average power ratio, also known as the crest factor, are introduced in order to estimate, respectively, the accuracy of the methods and the sharpness of the obtained energy distributions in the angle domain.

  9. Linear Array Ultrasonic Testing Of A Thick Concrete Specimens For Non-Destructive Evaluation

    Energy Technology Data Exchange (ETDEWEB)

    Clayton, Dwight A. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Khazanovich, Lev [Univ. of Minnesota, Minneapolis, MN (United States); Zammerachi, Mattia [Univ. of Minnesota, Minneapolis, MN (United States); Ezell, N. Dianne Bull [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2017-04-01

    The University of Minnesota and Oak Ridge National Laboratory are collaborating on the design and construction of a concrete specimen with sufficient reinforcement density and cross-sectional size to represent a light water reactor (LWR) containment wall with various defects. The preliminary analysis of the collected data using extended synthetic aperture focussin technique (SAFT) reconstruction indicated a great potential of the ultrasound array technology for locating relatively shallow distresses. However, the resolution and reliability of the analysis is inversely proportional to the defect depth and the amount of reinforcement between the measurement point and the defect location. The objective of this round of testing is to evaluate repeatability of the obtained reconstructions from measurements with different frequencies as well as to examine the effect of the duration of the sending ultrasound signal on the resulting reconstructions. Two series of testing are performed in this study. The objective of the first series is to evaluate repeatability of the measurements and resulting reconstructed images. The measurements use three center frequencies. Five measurements are performed at each location with and without lifting the device. The analysis of the collected data suggested that a linear array ultrasound system can produce reliably repeatable reconstructions using 50 kHz signals for relatively shallow depths (less than 0.5 m). However, for reconstructions at the greater depths the use of lower frequency and/or signal filtering to reduce the effect of signal noise may be required. The objective of the second series of testing is to obtain measurements with various impulse signal durations. The entire grid on the smooth surface is tested with four different various impulse signal durations. An analysis of the resulting extended SAFT reconstructions suggested that Kirchhoff-based migration leads to easier interpreting reconstructions when shorter duration

  10. Measurement of changes in linear accelerator photon energy through flatness variation using an ion chamber array

    International Nuclear Information System (INIS)

    Gao Song; Balter, Peter A.; Rose, Mark; Simon, William E.

    2013-01-01

    Purpose: To compare the use of flatness versus percent depth dose (PDD) for determining changes in photon beam energy for a megavoltage linear accelerator. Methods: Energy changes were accomplished by adjusting the bending magnet current by up to ±15% in 5% increments away from the value used clinically. Two metrics for flatness, relative flatness in the central 80% of the field (Flat) and average maximum dose along the diagonals normalized by central axis dose (F DN ), were measured using a commercially available planner ionization chamber array. PDD was measured in water at depths of 5 and 10 cm in 3 × 3 cm 2 and 10 × 10 cm 2 fields using a cylindrical chamber. Results: PDD was more sensitive to changes in energy when the beam energy was increased than when it was decreased. For the 18-MV beam in particular, PDD was not sensitive to energy reductions below the nominal energy. The value of Flat was found to be more sensitive to decreases in energy than to increases, with little sensitivity to energy increases above the nominal energy for 18-MV beams. F DN was the only metric that was found to be sensitive to both increases and reductions of energy for both the 6- and 18-MV beams. Conclusions: Flatness based metrics were found to be more sensitive to energy changes than PDD, In particular, F DN was found to be the most sensitive metric to energy changes for photon beams of 6 and 18 MV. The ionization chamber array allows this metric to be conveniently measured as part of routine accelerator quality assurance.

  11. P-S & S-P Elastic Wave Conversions from Linear Arrays of Oriented Microcracks

    Science.gov (United States)

    Jiang, L.; Modiriasari, A.; Bobet, A.; Pyrak-Nolte, L. J.

    2017-12-01

    Natural and induced processes can produce oriented mechanical discontinuities such as en echelon cracks, fractures and faults. Previous research has shown that compressional to shear (P-S) wave conversions occur at normal incidence to a fracture because of cross-coupling fracture compliances (Nakagawa et al., 2000). Here, experiments and computer simulation are presented to demonstrate the link among cross-coupling stiffness, microcrack orientation and energy partitioning among P, S, and P-S/S-P waves. A FormLabs 2 3D printer was used to fabricate 7 samples (50 mm x 50 mm x 100 mm) with linear arrays of microcracks oriented at 0, 15, 30, 45, 60, 75, and 900 with a print resolution of 0.025 mm. The microcracks were elliptical in cross-sections (2 mm long by 1 mm wide), through the 50 mm thickness of sample, and spaced 3 mm (center-to-center for adjacent cracks). A 25 mm length of each sample contained no microcracks to act as a reference material. Broadband transducers (0.2-1.5 MHz) were used to transmit and receive P and polarized S wave signals that were propagated at normal incidence to the linear array of microcracks. P-wave amplitude increased, while S-wave amplitude remained relatively constant, as the microcrack orientation increased from 0o to 90o. At normal incidence, P-S and S-P wave conversions emerged and increased in amplitude as the crack inclination increased from 00 to 450. From 450 to 900, the amplitude of these converted modes decreased. Between negative and positive crack angles, the P-to-S and S-to-P waves were 1800 phase reversed. The observed energy partitioning matched the computed compliances obtained from numerical simulations with ABAQUS. The cross-coupling compliance for cracks inclined at 450 was found to be the smallest magnitude. 3D printing enabled the study of microstructural effects on macro-scale wave measurements. Information on the orientation of microcracks or even en echelon fractures and faults is contained in P-S conversions

  12. Using a 2D detector array for meaningful and efficient linear accelerator beam property validations.

    Science.gov (United States)

    Ritter, Timothy A; Gallagher, Ian; Roberson, Peter L

    2014-11-08

    Following linear accelerator commissioning, the qualified medical physicist is responsible for monitoring the machine's ongoing performance, detecting and investigating any changes in beam properties, and assessing the impact of unscheduled repairs. In support of these responsibilities, the authors developed a method of using a 2D ionization chamber array to efficiently test and validate important linear accelerator photon beam properties. A team of three physicists identified critical properties of the accelerator and developed constancy tests that were sensitive to each of the properties. The result was a 14-field test plan. The test plan includes large and small fields at varying depths, a reduced SSD field at shallow depth for sensitivity to extra focal photon and electron components, and analysis of flatness, symmetry, dose, dose profiles, and dose ratios. Constancy tests were repeated five times over a period of six weeks and used to set upper and lower investigation levels at ± 3 SDs. Deliberate variations in output, penumbra, and energy were tested to determine the suitability of the proposed method. Measurements were also performed on a similar, but distinct, machine to assess test sensitivity. The results demonstrated upper and lower investigation levels significantly smaller than the comparable TG-142 annual recommendations, with the exception of the surrogate used for output calibration, which still fell within the TG-142 monthly recommendation. Subtle changes in output, beam energy, and penumbra were swiftly identified for further investigation. The test set identified the distinct nature of the second accelerator. The beam properties of two photon energies can be validated in approximately 1.5 hrs using this method. The test suite can be used to evaluate the impact of minor repairs, detect changes in machine performance over time, and supplement other machine quality assurance testing.

  13. [A capillary blood flow velocity detection system based on linear array charge-coupled devices].

    Science.gov (United States)

    Zhou, Houming; Wang, Ruofeng; Dang, Qi; Yang, Li; Wang, Xiang

    2017-12-01

    In order to detect the flow characteristics of blood samples in the capillary, this paper introduces a blood flow velocity measurement system based on field-programmable gate array (FPGA), linear charge-coupled devices (CCD) and personal computer (PC) software structure. Based on the analysis of the TCD1703C and AD9826 device data sheets, Verilog HDL hardware description language was used to design and simulate the driver. Image signal acquisition and the extraction of the real-time edge information of the blood sample were carried out synchronously in the FPGA. Then a series of discrete displacement were performed in a differential operation to scan each of the blood samples displacement, so that the sample flow rate could be obtained. Finally, the feasibility of the blood flow velocity detection system was verified by simulation and debugging. After drawing the flow velocity curve and analyzing the velocity characteristics, the significance of measuring blood flow velocity is analyzed. The results show that the measurement of the system is less time-consuming and less complex than other flow rate monitoring schemes.

  14. MLAOS: A Multi-Point Linear Array of Optical Sensors for Coniferous Foliage Clumping Index Measurement

    Directory of Open Access Journals (Sweden)

    Yonghua Qu

    2014-05-01

    Full Text Available The canopy foliage clumping effect is primarily caused by the non-random distribution of canopy foliage. Currently, measurements of clumping index (CI by handheld instruments is typically time- and labor-intensive. We propose a low-cost and low-power automatic measurement system called Multi-point Linear Array of Optical Sensors (MLAOS, which consists of three above-canopy and nine below-canopy optical sensors that capture plant transmittance at different times of the day. Data communication between the MLAOS node is facilitated by using a ZigBee network, and the data are transmitted from the field MLAOS to a remote data server using the Internet. The choice of the electronic element and design of the MLAOS software is aimed at reducing costs and power consumption. A power consumption test showed that, when a 4000 mAH Li-ion battery is used, a maximum of 8–10 months of work can be achieved. A field experiment on a coniferous forest revealed that the CI of MLAOS may reveal a clumping effect that occurs within the canopy. In further work, measurement of the multi-scale clumping effect can be achieved by utilizing a greater number of MLAOS devices to capture the heterogeneity of the plant canopy.

  15. Application of Hybrid Optimization Algorithm in the Synthesis of Linear Antenna Array

    Directory of Open Access Journals (Sweden)

    Ezgi Deniz Ülker

    2014-01-01

    Full Text Available The use of hybrid algorithms for solving real-world optimization problems has become popular since their solution quality can be made better than the algorithms that form them by combining their desirable features. The newly proposed hybrid method which is called Hybrid Differential, Particle, and Harmony (HDPH algorithm is different from the other hybrid forms since it uses all features of merged algorithms in order to perform efficiently for a wide variety of problems. In the proposed algorithm the control parameters are randomized which makes its implementation easy and provides a fast response. This paper describes the application of HDPH algorithm to linear antenna array synthesis. The results obtained with the HDPH algorithm are compared with three merged optimization techniques that are used in HDPH. The comparison shows that the performance of the proposed algorithm is comparatively better in both solution quality and robustness. The proposed hybrid algorithm HDPH can be an efficient candidate for real-time optimization problems since it yields reliable performance at all times when it gets executed.

  16. Three-dimensional optoacoustic tomography using a conventional ultrasound linear detector array: whole-body tomographic system for small animals.

    Science.gov (United States)

    Gateau, Jerome; Caballero, Miguel Angel Araque; Dima, Alexander; Ntziachristos, Vasilis

    2013-01-01

    Optoacoustic imaging relies on the detection of ultrasonic waves induced by laser pulse excitations to map optical absorption in biological tissue. A tomographic geometry employing a conventional ultrasound linear detector array for volumetric optoacoustic imaging is reported. The geometry is based on a translate-rotate scanning motion of the detector array, and capitalizes on the geometrical characteristics of the transducer assembly to provide a large solid angular detection aperture. A system for three-dimensional whole-body optoacoustic tomography of small animals is implemented. The detection geometry was tested using a 128-element linear array (5.0∕7.0 MHz, Acuson L7, Siemens), moved by steps with a rotation∕translation stage assembly. Translation and rotation range of 13.5 mm and 180°, respectively, were implemented. Optoacoustic emissions were induced in tissue-mimicking phantoms and ex vivo mice using a pulsed laser operating in the near-IR spectral range at 760 nm. Volumetric images were formed using a filtered backprojection algorithm. The resolution of the optoacoustic tomography system was measured to be better than 130 μm in-plane and 330 μm in elevation (full width half maximum), and to be homogenous along a 15 mm diameter cross section due to the translate-rotate scanning geometry. Whole-body volumetric optoacoustic images of mice were performed ex vivo, and imaged organs and blood vessels through the intact abdominal and head regions were correlated to the mouse anatomy. Overall, the feasibility of three-dimensional and high-resolution whole-body optoacoustic imaging of small animal using a conventional linear array was demonstrated. Furthermore, the scanning geometry may be used for other linear arrays and is therefore expected to be of great interest for optoacoustic tomography at macroscopic and mesoscopic scale. Specifically, conventional detector arrays with higher central frequencies may be investigated.

  17. Sonography of the chest using linear-array versus sector transducers: Correlation with auscultation, chest radiography, and computed tomography.

    Science.gov (United States)

    Tasci, Ozlem; Hatipoglu, Osman Nuri; Cagli, Bekir; Ermis, Veli

    2016-07-08

    The primary purpose of our study was to compare the efficacies of two sonographic (US) probes, a high-frequency linear-array probe and a lower-frequency phased-array sector probe in the diagnosis of basic thoracic pathologies. The secondary purpose was to compare the diagnostic performance of thoracic US with auscultation and chest radiography (CXR) using thoracic CT as a gold standard. In total, 55 consecutive patients scheduled for thoracic CT were enrolled in this prospective study. Four pathologic entities were evaluated: pneumothorax, pleural effusion, consolidation, and interstitial syndrome. A portable US scanner was used with a 5-10-MHz linear-array probe and a 1-5-MHz phased-array sector probe. The first probe used was chosen randomly. US, CXR, and auscultation results were compared with the CT results. The linear-array probe had the highest performance in the identification of pneumothorax (83% sensitivity, 100% specificity, and 99% diagnostic accuracy) and pleural effusion (100% sensitivity, 97% specificity, and 98% diagnostic accuracy); the sector probe had the highest performance in the identification of consolidation (89% sensitivity, 100% specificity, and 95% diagnostic accuracy) and interstitial syndrome (94% sensitivity, 93% specificity, and 94% diagnostic accuracy). For all pathologies, the performance of US was superior to those of CXR and auscultation. The linear probe is superior to the sector probe for identifying pleural pathologies, whereas the sector probe is superior to the linear probe for identifying parenchymal pathologies. Thoracic US has better diagnostic performance than CXR and auscultation for the diagnosis of common pathologic conditions of the chest. © 2016 Wiley Periodicals, Inc. J Clin Ultrasound 44:383-389, 2016. © 2016 Wiley Periodicals, Inc.

  18. Direct and pulsed current annealing of p-MOSFET based dosimeter: the "MOSkin".

    Science.gov (United States)

    Alshaikh, Sami; Carolan, Martin; Petasecca, Marco; Lerch, Michael; Metcalfe, Peter; Rosenfeld, Anatoly

    2014-06-01

    Contemporary radiation therapy (RT) is complicated and requires sophisticated real-time quality assurance (QA). While 3D real-time dosimetry is most preferable in RT, it is currently not fully realised. A small, easy to use and inexpensive point dosimeter with real-time and in vivo capabilities is an option for routine QA. Such a dosimeter is essential for skin, in vivo or interface dosimetry in phantoms for treatment plan verification. The metal-oxide-semiconductor-field-effect-transistor (MOSFET) detector is one of the best choices for these purposes, however, the MOSFETs sensitivity and its signal stability degrade after essential irradiation which limits its lifespan. The accumulation of positive charge on the gate oxide and the creation of interface traps near the silicon-silicon dioxide layer is the primary physical phenomena responsible for this degradation. The aim of this study is to investigate MOSFET dosimeter recovery using two proposed annealing techniques: direct current (DC) and pulsed current (PC), both based on hot charged carrier injection into the gate oxide of the p-MOSFET dosimeter. The investigated MOSFETs were reused multiple times using an irradiation-annealing cycle. The effect of the current-annealing parameters was investigated for the dosimetric characteristics of the recovered MOSFET dosimeters such as linearity, sensitivity and initial threshold voltage. Both annealing techniques demonstrated excellent results in terms of maintaining a stable response, linearity and sensitivity of the MOSFET dosimeter. However, PC annealing is more preferable than DC annealing as it offers better dose response linearity of the reused MOSFET and has a very short annealing time.

  19. MOSFET dosimetry on modern radiation oncology modalities

    International Nuclear Information System (INIS)

    Rosenfeld, A.B.

    2002-01-01

    The development of MOSFET dosimetry is presented with an emphasis on the development of a scanning MOSFET dosimetry system for modern radiation oncology modalities. Fundamental aspects of MOSFETs in relation to their use as dosemeters are briefly discussed. The performance of MOSFET dosemeters in conformal radiotherapy, hadron therapy, intensity-modulated radiotherapy and microbeam radiation therapy is compared with other dosimetric techniques. In particular the application of MOSFET dosemeters in the characterisation and quality assurance of the steep dose gradients associated with the penumbra of some modern radiation oncology modalities is investigated. A new in vivo, on-line, scanning MOSFET read out system is also presented. The system has the ability to read out multiple MOSFET dosemeters with excellent spatial resolution and temperature stability and minimal slow border trapping effects. (author)

  20. Performance characteristics of a microMOSFET as an in vivo dosimeter in radiation therapy

    International Nuclear Information System (INIS)

    Ramaseshan, R; Kohli, K S; Zhang, T J; Lam, T; Norlinger, B; Hallil, A; Islam, M

    2004-01-01

    The commercially available microMOSFET dosimeter was characterized for its dosimetric properties in radiotherapy treatments. The MOSFET exhibited excellent correlation with the dose and was linear in the range of 5-500 cGy. No measurable effect in response was observed in the temperature range of 20-40 0 C. No significant change in response was observed by changing the dose rate between 100 and 600 monitor units (MU) min -1 or change in the dose per pulse. A 3% post-irradiation fading was observed within the first 5 h of exposure and thereafter it remained stable up to 60 h. A uniform energy response was observed in the therapy range between 4 MV and 18 MV. However, below 0.6 MeV (Cs-132), the MOSFET response increased with the decrease in energy. The MOSFET also had a uniform dose response in 6-20 MeV electron beams. The directional dependence of MOSFET was within ±2% for all the energies studied. The inherent build-up of the MOSFET was evaluated dosimetrically and found to have varying water equivalent thickness, depending on the energy and the side of the beam entry. At depth, a single calibration factor obtained by averaging the MOSFET response over different field sizes, energies, orientation and depths reproduced the ion chamber measured dose to within 5%. The stereotactic and the penumbral measurements demonstrated that the MOSFET could be used in a high gradient field such as IMRT. The study showed that the microMOSFET dosimeter could be used as an in vivo dosimeter to verify the dose delivery to the patient to within ±5%

  1. Power Consumption of a MOSFET

    Directory of Open Access Journals (Sweden)

    Frederick Selkey

    2010-01-01

    Full Text Available A MOSFET is defined as metal oxide semiconductor field effect transistor. These electrical components are combined or integrated to form control and logic functions for laptop and desktop computers, power controls in printing devices, motor controls and are used in many other electrical circuits. All electrical devices consume electrical power based on current and voltage. For this paper we calculated the power consumption of a Toshiba 2SK3563 MOSFET during its triode mode by finding the area under the current-voltage characteristic curve.

  2. Power-MOSFET Voltage Regulator

    Science.gov (United States)

    Miller, W. N.; Gray, O. E.

    1982-01-01

    Ninety-six parallel MOSFET devices with two-stage feedback circuit form a high-current dc voltage regulator that also acts as fully-on solid-state switch when fuel-cell out-put falls below regulated voltage. Ripple voltage is less than 20 mV, transient recovery time is less than 50 ms. Parallel MOSFET's act as high-current dc regulator and switch. Regulator can be used wherever large direct currents must be controlled. Can be applied to inverters, industrial furnaces photovoltaic solar generators, dc motors, and electric autos.

  3. Investigation of the use of MOSFET for clinical IMRT dosimetric verification

    International Nuclear Information System (INIS)

    Chuang, Cynthia F.; Verhey, Lynn J.; Xia Ping

    2002-01-01

    With advanced conformal radiotherapy using intensity modulated beams, it is important to have radiation dose verification measurements prior to treatment. Metal oxide semiconductor field effect transistors (MOSFET) have the advantage of a faster and simpler reading procedure compared to thermoluminescent dosimeters (TLD), and with the commercial MOSFET system, multiple detectors can be used simultaneously. In addition, the small size of the detector could be advantageous, especially for point dose measurements in small homogeneous dose regions. To evaluate the feasibility of MOSFET for routine IMRT dosimetry, a comprehensive set of experiments has been conducted, to investigate the stability, linearity, energy, and angular dependence. For a period of two weeks, under a standard measurement setup, the measured dose standard deviation using the MOSFETs was ±0.015 Gy with the mean dose being 1.00 Gy. For a measured dose range of 0.3 Gy to 4.2 Gy, the MOSFETs present a linear response, with a linearity coefficient of 0.998. Under a 10x10 cm 2 square field, the dose variations measured by the MOSFETs for every 10 degrees from 0 to 180 degrees is ±2.5%. The percent depth dose (PDD) measurements were used to verify the energy dependence. The measured PDD using the MOSFETs from 0.5 cm to 34 cm depth agreed to within ±3% when compared to that of the ionization chamber. For IMRT dose verification, two special phantoms were designed. One is a solid water slab with 81 possible MOSFET placement holes, and another is a cylindrical phantom with 48 placement holes. For each IMRT phantom verification, an ionization chamber and 3 to 5 MOSFETs were used to measure multiple point doses at different locations. Preliminary results show that the agreement between dose measured by MOSFET and that calculated by Corvus is within 5% error, while the agreement between ionization chamber measurement and the calculation is within 3% error. In conclusion, MOSFET detectors are suitable for

  4. Optimal design of a double-sided linear motor with a multi-segmented trapezoidal magnet array for a high precision positioning system

    International Nuclear Information System (INIS)

    Lee, Moon G.; Gweon, Dae-Gab

    2004-01-01

    A comparative analysis is performed for linear motors adopting conventional and multi-segmented trapezoidal (MST) magnet arrays, respectively, for a high-precision positioning system. The proposed MST magnet array is a modified version of a Halbach magnet array. The MST array has trapezoidal magnets with variable shape and dimensions while the Halbach magnet array generally has a rectangular magnet with identical dimensions. We propose a new model that can describe the magnetic field resulting from the complex-shaped magnets. The model can be applied to both MST and conventional magnet arrays. Using the model, a design optimization of the two types of linear motors is performed and compared. The magnet array with trapezoidal magnets can produce more force than one with rectangular magnets when they are arrayed in a linear motor where there is a yoke with high permeability. After the optimization and comparison, we conclude that the linear motor with the MST magnet array can generate more actuating force per volume than the motor with the conventional array. In order to satisfy the requirements of next generation systems such as high resolution, high speed, and long stroke, the use of a linear motor with a MST array as an actuator in a high precision positioning system is recommended from the results obtained here

  5. Geometric Potential Assessment for ZY3-02 Triple Linear Array Imagery

    Directory of Open Access Journals (Sweden)

    Kai Xu

    2017-06-01

    Full Text Available ZiYuan3-02 (ZY3-02 is the first remote sensing satellite for the development of China’s civil space infrastructure (CCSI and the second satellite in the ZiYuan3 series; it was launched successfully on 30 May 2016, aboard the CZ-4B rocket at the Taiyuan Satellite Launch Center (TSLC in China. Core payloads of ZY3-02 include a triple linear array camera (TLC and a multi-spectral camera, and this equipment will be used to acquire space geographic information with high-resolution and stereoscopic observations. Geometric quality is a key factor that affects the performance and potential of satellite imagery. For the purpose of evaluating comprehensively the geometric potential of ZY3-02, this paper introduces the method used for geometric calibration of the TLC onboard the satellite and a model for sensor corrected (SC products that serve as basic products delivered to users. Evaluation work was conducted by making a full assessment of the geometric performance. Furthermore, images of six regions and corresponding reference data were collected to implement the geometric calibration technique and evaluate the resulting geometric accuracy. Experimental results showed that the direct location performance and internal accuracy of SC products increased remarkably after calibration, and the planimetric and vertical accuracies with relatively few ground control points (GCPs were demonstrated to be better than 2.5 m and 2 m, respectively. Additionally, the derived digital surface model (DSM accuracy was better than 3 m (RMSE for flat terrain and 5 m (RMSE for mountainous terrain. However, given that several variations such as changes in the thermal environment can alter the camera’s installation angle, geometric performance will vary with the geographical location and imaging time changes. Generally, ZY3-02 can be used for 1:50,000 stereo mapping and can produce (and update larger-scale basic geographic information products.

  6. Numerical implementation of magneto-acousto-electrical tomography (MAET) using a linear phased array transducer

    Science.gov (United States)

    Soner Gözü, Mehmet; Zengin, Reyhan; Güneri Gençer, Nevzat

    2018-02-01

    In this study, the performance and implementation of magneto-acousto-electrical tomography (MAET) is investigated using a linear phased array (LPA) transducer. The goal of MAET is to image the conductivity distribution in biological bodies. It uses the interaction between ultrasound and a static magnetic field to generate velocity current density distribution inside the body. The resultant voltage due to velocity current density is sensed by surface electrodes attached on the body. In this study, the theory of MAET is reviewed. A 16-element LPA transducer with 1 MHz excitation frequency is used to provide beam directivity and steerability of acoustic waves. Different two-dimensional numerical models of breast and tumour are formed to analyze the multiphysics problem coupled with acoustics and electromagnetic fields. In these models, velocity current density distributions are obtained for pulse type ultrasound excitations. The static magnetic field is assumed as 1 T. To sense the resultant voltage caused by the velocity current density, it is assumed that two electrodes are attached on the surface of the body. The performance of MAET is shown through sensitivity matrix analysis. The sensitivity matrix is obtained for two transducer positions with 13 steering angles between -30\\circ to 30\\circ with 5\\circ angular intervals. For the reconstruction of the images, truncated singular value decomposition method is used with different signal-to-noise ratio (SNR) values (20 dB, 40 dB, 60 dB and 80 dB). The resultant images show that the perturbation (5 mm  ×  5 mm) placed 35 mm depth can be detected even if the SNR is 20 dB.

  7. Efficient Narrowband Direction of Arrival Estimation Based on a Combination of Uniform Linear/Shirvani-Akbari Arrays

    Directory of Open Access Journals (Sweden)

    Shahriar Shirvani Moghaddam

    2012-01-01

    Full Text Available Uniform linear array (ULA geometry does not perform well for direction of arrival (DOA estimation at directions close to the array endfires. Shirvani and Akbari solved this problem by displacing two elements from both ends of the ULA to the top and/or bottom of the array axis. Shirvani-Akbari array (SAA presents a considerable improvement in the DOA estimation of narrowband sources arriving at endfire directions in terms of DOA estimation accuracy and angular resolution. In this paper, all new proposed SAA configurations are modelled and also examined, numerically. In this paper, two well-known DOA estimation algorithms, multiple signal classification (MUSIC and minimum variance distortionless response (MVDR, are used to evaluate the effectiveness of proposed arrays using total root mean square error (RMSE criterion. In addition, two new scenarios are proposed which divide angular search to two parts, directions close to array endfires as well as middle angles. For middle angles, which belong to (−70∘≤≤70∘, ULA is considered, and for endfire angles, the angles which belong to (−90∘≤≤−70∘ and (70∘≤≤90∘, SAA is considered. Simulation results of new proposed scenarios for DOA estimation of narrowband signals show the better performance with lower computational load.

  8. Modelling of the thermal parameters of high-power linear laser-diode arrays. Two-dimensional transient model

    International Nuclear Information System (INIS)

    Bezotosnyi, V V; Kumykov, Kh Kh

    1998-01-01

    A two-dimensional transient thermal model of an injection laser is developed. This model makes it possible to analyse the temperature profiles in pulsed and cw stripe lasers with an arbitrary width of the stripe contact, and also in linear laser-diode arrays. This can be done for any durations and repetition rates of the pump pulses. The model can also be applied to two-dimensional laser-diode arrays operating quasicontinuously. An analysis is reported of the influence of various structural parameters of a diode array on the thermal regime of a single laser. The temperature distributions along the cavity axis are investigated for different variants of mounting a crystal on a heat sink. It is found that the temperature drop along the cavity length in cw and quasi-cw laser diodes may exceed 20%. (lasers)

  9. Surgical Workflow Analysis: Ideal Application of Navigated Linear Array Ultrasound in Low-Grade Glioma Surgery.

    Science.gov (United States)

    Lothes, Thomas Ernst; Siekmann, Max; König, Ralph Werner; Wirtz, Christian Rainer; Coburger, Jan

    2016-11-01

    Background  Intraoperative imaging in low-grade glioma (LGG) surgery can facilitate residual tumor control and improve surgical outcome. The aim of the study was to evaluate the ideal application and typical interactions of intraoperative MRI (iMRI), conventional low-frequency intraoperative ultrasound (cioUS), and high-frequency linear array intraoperative ultrasound (lioUS) to optimize surgical workflow. Methods  Prospectively, we included 11 patients with an LGG. Typical procedural workflow in the iMRI suite was recorded with a compatible software. We took notes of duration, frequency of application, the surgeon's evaluation of image quality, and the respective benefit of lioUS (15 MHz), cioUS (7 MHz), and iMRI (1.5 T). With the help of the workflow software, we meticulously analyzed ∼ 55 hours of surgery. Results  During the interventions, lioUS was used more often (76.3%) than cioUS (23.7%) and showed a better mean image quality (1 = best to 6 = worst) of 2.08 versus 3.26 with cioUS. The benefit of the lioUS application was rated with an average of 2.27, whereas the cioUS probe only reached a mean value of 3.83. The most common application of lioUS was resection control (42.6%); cioUS was used mainly for orientation (63.2%). Overall, lioUS was used more often and was rated better for both the purposes just described regarding image quality and benefit. Estimated residual tumor based on lioUS alone was lower than the final residual tumor detected with iMRI (7.5% versus 14.5%). The latter technique was rated as the best imaging modality for resection control in all cases followed by lioUS. Conclusion  We provide proof of principle for workflow assessment in cranial neurosurgery. Although iMRI remains the imaging method of choice, lioUS has shown to be beneficial in a combined setup. Evaluation of lioUS was significantly superior to cioUS in most indications except for subcortical lesions. Georg Thieme Verlag KG Stuttgart · New York.

  10. Ambient noise adjoint tomography for a linear array in North China

    Science.gov (United States)

    Zhang, C.; Yao, H.; Liu, Q.; Yuan, Y. O.; Zhang, P.; Feng, J.; Fang, L.

    2017-12-01

    Ambient noise tomography based on dispersion data and ray theory has been widely utilized for imaging crustal structures. In order to improve the inversion accuracy, ambient noise tomography based on the 3D adjoint approach or full waveform inversion has been developed recently, however, the computational cost is tremendous. In this study we present 2D ambient noise adjoint tomography for a linear array in north China with significant computational efficiency compared to 3D ambient noise adjoint tomography. During the preprocessing, we first convert the observed data in 3D media, i.e., surface-wave empirical Green's functions (EGFs) from ambient noise cross-correlation, to the reconstructed EGFs in 2D media using a 3D/2D transformation scheme. Different from the conventional steps of measuring phase dispersion, the 2D adjoint tomography refines 2D shear wave speeds along the profile directly from the reconstructed Rayleigh wave EGFs in the period band 6-35s. With the 2D initial model extracted from the 3D model from traditional ambient noise tomography, adjoint tomography updates the model by minimizing the frequency-dependent Rayleigh wave traveltime misfits between the reconstructed EGFs and synthetic Green function (SGFs) in 2D media generated by the spectral-element method (SEM), with a preconditioned conjugate gradient method. The multitaper traveltime difference measurement is applied in four period bands during the inversion: 20-35s, 15-30s, 10-20s and 6-15s. The recovered model shows more detailed crustal structures with pronounced low velocity anomaly in the mid-lower crust beneath the junction of Taihang Mountains and Yin-Yan Mountains compared with the initial model. This low velocity structure may imply the possible intense crust-mantle interactions, probably associated with the magmatic underplating during the Mesozoic to Cenozoic evolution of the region. To our knowledge, it's first time that ambient noise adjoint tomography is implemented in 2D media

  11. Fabrication of long linear arrays of plastic optical fibers with squared ends for the use of code mark printing lithography

    Science.gov (United States)

    Horiuchi, Toshiyuki; Watanabe, Jun; Suzuki, Yuta; Iwasaki, Jun-ya

    2017-05-01

    Two dimensional code marks are often used for the production management. In particular, in the production lines of liquid-crystal-display panels and others, data on fabrication processes such as production number and process conditions are written on each substrate or device in detail, and they are used for quality managements. For this reason, lithography system specialized in code mark printing is developed. However, conventional systems using lamp projection exposure or laser scan exposure are very expensive. Therefore, development of a low-cost exposure system using light emitting diodes (LEDs) and optical fibers with squared ends arrayed in a matrix is strongly expected. In the past research, feasibility of such a new exposure system was demonstrated using a handmade system equipped with 100 LEDs with a central wavelength of 405 nm, a 10×10 matrix of optical fibers with 1 mm square ends, and a 10X projection lens. Based on these progresses, a new method for fabricating large-scale arrays of finer fibers with squared ends was developed in this paper. At most 40 plastic optical fibers were arranged in a linear gap of an arraying instrument, and simultaneously squared by heating them on a hotplate at 120°C for 7 min. Fiber sizes were homogeneous within 496+/-4 μm. In addition, average light leak was improved from 34.4 to 21.3% by adopting the new method in place of conventional one by one squaring method. Square matrix arrays necessary for printing code marks will be obtained by piling the newly fabricated linear arrays up.

  12. Identification and mapping of linear antibody epitopes in human serum albumin using high-density Peptide arrays.

    Directory of Open Access Journals (Sweden)

    Lajla Bruntse Hansen

    Full Text Available We have recently developed a high-density photolithographic, peptide array technology with a theoretical upper limit of 2 million different peptides per array of 2 cm(2. Here, we have used this to perform complete and exhaustive analyses of linear B cell epitopes of a medium sized protein target using human serum albumin (HSA as an example. All possible overlapping 15-mers from HSA were synthesized and probed with a commercially available polyclonal rabbit anti-HSA antibody preparation. To allow for identification of even the weakest epitopes and at the same time perform a detailed characterization of key residues involved in antibody binding, the array also included complete single substitution scans (i.e. including each of the 20 common amino acids at each position of each 15-mer peptide. As specificity controls, all possible 15-mer peptides from bovine serum albumin (BSA and from rabbit serum albumin (RSA were included as well. The resulting layout contained more than 200.000 peptide fields and could be synthesized in a single array on a microscope slide. More than 20 linear epitope candidates were identified and characterized at high resolution i.e. identifying which amino acids in which positions were needed, or not needed, for antibody interaction. As expected, moderate cross-reaction with some peptides in BSA was identified whereas no cross-reaction was observed with peptides from RSA. We conclude that high-density peptide microarrays are a very powerful methodology to identify and characterize linear antibody epitopes, and should advance detailed description of individual specificities at the single antibody level as well as serologic analysis at the proteome-wide level.

  13. Identification and mapping of linear antibody epitopes in human serum albumin using high-density Peptide arrays.

    Science.gov (United States)

    Hansen, Lajla Bruntse; Buus, Soren; Schafer-Nielsen, Claus

    2013-01-01

    We have recently developed a high-density photolithographic, peptide array technology with a theoretical upper limit of 2 million different peptides per array of 2 cm(2). Here, we have used this to perform complete and exhaustive analyses of linear B cell epitopes of a medium sized protein target using human serum albumin (HSA) as an example. All possible overlapping 15-mers from HSA were synthesized and probed with a commercially available polyclonal rabbit anti-HSA antibody preparation. To allow for identification of even the weakest epitopes and at the same time perform a detailed characterization of key residues involved in antibody binding, the array also included complete single substitution scans (i.e. including each of the 20 common amino acids) at each position of each 15-mer peptide. As specificity controls, all possible 15-mer peptides from bovine serum albumin (BSA) and from rabbit serum albumin (RSA) were included as well. The resulting layout contained more than 200.000 peptide fields and could be synthesized in a single array on a microscope slide. More than 20 linear epitope candidates were identified and characterized at high resolution i.e. identifying which amino acids in which positions were needed, or not needed, for antibody interaction. As expected, moderate cross-reaction with some peptides in BSA was identified whereas no cross-reaction was observed with peptides from RSA. We conclude that high-density peptide microarrays are a very powerful methodology to identify and characterize linear antibody epitopes, and should advance detailed description of individual specificities at the single antibody level as well as serologic analysis at the proteome-wide level.

  14. In vivo dosimetry in radio-surgery using MOSFET and micro MOSFET

    International Nuclear Information System (INIS)

    Sors, Aurelie

    2010-01-01

    The author reports a study which aimed at assessing MOSFETs and micro-MOSFETs as in vivo surface dosimeters in 6 MV radio-surgery fixed beams for minimum field sizes of 6 x 6 square millimetres. The developed calibration method is adapted to small beams and MOSFET technology. It allows a reduced number of measurements to perform calibration. Moreover, a new equivalent square formula increases the accuracy of the determination of the actual dose delivered in small beams. Obtained results show that MOSFETs and micro-MOSFETs can be used as in vivo dosimeters when located at the surface

  15. Synthesis of Phase-Only Reconfigurable Linear Arrays Using Multiobjective Invasive Weed Optimization Based on Decomposition

    Directory of Open Access Journals (Sweden)

    Yan Liu

    2014-01-01

    Full Text Available Synthesis of phase-only reconfigurable array aims at finding a common amplitude distribution and different phase distributions for the array to form different patterns. In this paper, the synthesis problem is formulated as a multiobjective optimization problem and solved by a new proposed algorithm MOEA/D-IWO. First, novel strategies are introduced in invasive weed optimization (IWO to make original IWO fit for solving multiobjective optimization problems; then, the modified IWO is integrated into the framework of the recently well proved competitive multiobjective optimization algorithm MOEA/D to form a new competitive MOEA/D-IWO algorithm. At last, two sets of experiments are carried out to illustrate the effectiveness of MOEA/D-IWO. In addition, MOEA/D-IWO is compared with MOEA/D-DE, a new version of MOEA/D. The comparing results show the superiority of MOEA/D-IWO and indicate its potential for solving the antenna array synthesis problems.

  16. Study on data acquisition circuit used in SSPA linear array detector X-ray detection

    CERN Document Server

    Wei Biao; Che Zhen Ping

    2002-01-01

    After SSPA used as X-ray array detector is developed, the authors take a research on the data acquisition circuit applied to the detector. The experiment designed has verified the feasibility of application of this array detector and its data acquisition circuit to X-ray computed tomography (X-CT). The preliminary test results indicate that the method of the X-ray detection is feasible for industry X-CT nondestructive testing, which brings about advantage for detecting and measuring with high resolution, good efficiency and low cost

  17. Commissioning of a MOSFET in-vivo patient dose verification system

    International Nuclear Information System (INIS)

    Jenetsky, G.O.; Brown, R.L.

    2004-01-01

    Full text: TLD dosimetry has long been used for in-vivo measurements in estimating absorbed dose to critical structures on patients. Preparing TLDs for measurement, and then obtaining the results is a time consuming process taking many hours. The Thomson-Neilson 'MOSFET 20' (Metal Oxide Semiconducting Field Effect Transistor) dose assessment system, allows for in-vivo measurements (preparation and results) within minutes. Before being used clinically for dose verification, the MOSFETs were tested against the manufacturer's technical specifications, and compared with results from TLDs measured under controlled experiments and patient measurements. Standard sensitivity MOSFETs (TN-502RD) were used with the bias supply set to High sensitivity range. MOSFETs were tested for linearity (5-100cGy) and their calibration factors obtained for all energies (6MV, 18MV, 6MeV, 12MeV, 16MeV, 20MeV) using the method described by Ramani. MOSFETs and TLDs were exposed to a 6MV beam for 50MU at various depths (RW3 solid water phantom) and field sizes and compared to results taken with an ion chamber. Measurements using both systems were also taken at beam edge and 5mm and 10mm out of the field. Eleven patients, who had lens dose assessment requests were measured with both TLDs and MOSFETs and a paired t-test was performed on the results. On two patients, multiple (nine and four) MOSFET measurements were taken and the range of results compared to the range obtained from the TLDs. MOSFET linearity obtained co-efficients of R 2 ≥ 0.996 for all energies, this compared to R 2 ≥ 0.996 recorded by both Ramani and Chaung. The y-intercept values varied from 0 to -2.0mV. Greatest variation between calibration factors, measured for each energy, was 7.5%, this is substantially greater than 3.8% quoted by the manufacturer. For the measurements taken at varying depths and field sizes both TLDs and MOSFETs agreed with the ion chamber results ±IcGy. Measurements taken at beam edge varied ±6c

  18. Improvement of resolution in full-view linear-array photoacoustic computed tomography using a novel adaptive weighting method

    Science.gov (United States)

    Omidi, Parsa; Diop, Mamadou; Carson, Jeffrey; Nasiriavanaki, Mohammadreza

    2017-03-01

    Linear-array-based photoacoustic computed tomography is a popular methodology for deep and high resolution imaging. However, issues such as phase aberration, side-lobe effects, and propagation limitations deteriorate the resolution. The effect of phase aberration due to acoustic attenuation and constant assumption of the speed of sound (SoS) can be reduced by applying an adaptive weighting method such as the coherence factor (CF). Utilizing an adaptive beamforming algorithm such as the minimum variance (MV) can improve the resolution at the focal point by eliminating the side-lobes. Moreover, invisibility of directional objects emitting parallel to the detection plane, such as vessels and other absorbing structures stretched in the direction perpendicular to the detection plane can degrade resolution. In this study, we propose a full-view array level weighting algorithm in which different weighs are assigned to different positions of the linear array based on an orientation algorithm which uses the histogram of oriented gradient (HOG). Simulation results obtained from a synthetic phantom show the superior performance of the proposed method over the existing reconstruction methods.

  19. Characterization and linear array LA48 Commissioner for measuring the position of the multi leaf collimator; Caracterizacion y comisionado del linear array LA48 para medir el posicionamiento del colimador multilaminas

    Energy Technology Data Exchange (ETDEWEB)

    Conles Picos, I.; Cenizo de Castro, E.; Aparicio martin, A. R.; Barrio Lazo, F.; Cesteros Morante, M. J.

    2011-07-01

    The protocol of Quality Control of electron accelerators for medical use of SEFM proposed for multi leaf collimation system (MLC) to verify the positioning of the blades connect. To do this you must find a system with sufficient accuracy and precision and, if possible, easy to assemble and offers real-time results. One of these teams is the Linear Array of PTW-Freiburg (LA48), which consists of a row of 47 ionization chambers, of 0008 cc and 8 mm apart from each other. In this paper, we describe our process of characterization and LA48 commissioner. (Author)

  20. Kink effect in ultrathin FDSOI MOSFETs

    Science.gov (United States)

    Park, H. J.; Bawedin, M.; Choi, H. G.; Cristoloveanu, S.

    2018-05-01

    Systematic experiments demonstrate the presence of the kink effect even in FDSOI MOSFETs. The back-gate bias controls the kink effect via the formation of a back accumulation channel. The kink is more or less pronounced according to the film thickness and channel length. However, in ultrathin (MOSFETs.

  1. Two-dimensional mapping of needle visibility with linear and curved array for ultrasound-guided interventional procedure

    Science.gov (United States)

    Susanti, Hesty; Suprijanto, Kurniadi, Deddy

    2018-02-01

    Needle visibility in ultrasound-guided technique has been a crucial factor for successful interventional procedure. It has been affected by several factors, i.e. puncture depth, insertion angle, needle size and material, and imaging technology. The influences of those factors made the needle not always well visible. 20 G needles of 15 cm length (Nano Line, facet) were inserted into water bath with variation of insertion angles and depths. Ultrasound measurements are performed with BK-Medical Flex Focus 800 using 12 MHz linear array and 5 MHz curved array in Ultrasound Guided Regional Anesthesia mode. We propose 3 criteria to evaluate needle visibility, i.e. maximum intensity, mean intensity, and the ratio between minimum and maximum intensity. Those criteria were then depicted into representative maps for practical purpose. The best criterion candidate for representing the needle visibility was criterion 1. Generally, the appearance pattern of the needle from this criterion was relatively consistent, i.e. for linear array, it was relatively poor visibility in the middle part of the shaft, while for curved array, it is relatively better visible toward the end of the shaft. With further investigations, for example with the use of tissue-mimicking phantom, the representative maps can be built for future practical purpose, i.e. as a tool for clinicians to ensure better needle placement in clinical application. It will help them to avoid the "dead" area where the needle is not well visible, so it can reduce the risks of vital structures traversing and the number of required insertion, resulting in less patient morbidity. Those simple criteria and representative maps can be utilized to evaluate general visibility patterns of the needle in vast range of needle types and sizes in different insertion media. This information is also important as an early investigation for future research of needle visibility improvement, i.e. the development of beamforming strategies and

  2. A Mixed-Integer Linear Programming approach to wind farm layout and inter-array cable routing

    DEFF Research Database (Denmark)

    Fischetti, Martina; Leth, John-Josef; Borchersen, Anders Bech

    2015-01-01

    A Mixed-Integer Linear Programming (MILP) approach is proposed to optimize the turbine allocation and inter-array offshore cable routing. The two problems are considered with a two steps strategy, solving the layout problem first and then the cable problem. We give an introduction to both problems...... and present the MILP models we developed to solve them. To deal with interference in the onshore cases, we propose an adaptation of the standard Jensen’s model, suitable for 3D cases. A simple Stochastic Programming variant of our model allows us to consider different wind scenarios in the optimization...

  3. Dosimetric evaluation of a new OneDose MOSFET for Ir-192 energy

    International Nuclear Information System (INIS)

    Kinhikar, Rajesh A; Sharma, Pramod K; Tambe, Chandrashekhar M; Deshpande, Deepak D

    2006-01-01

    The purpose of this study was to investigate dosimetry (reproducibility, energy correction, relative response with distance from source, linearity with threshold dose, rate of fading, temperature and angular dependence) of a newly designed OneDose TM MOSFET patient dosimetry system for use in HDR brachytherapy with Ir-192 energy. All measurements were performed with a MicroSelectron HDR unit and OneDose MOSFET detectors. All dosimeters were normalized to 3 min post-irradiation to minimize fading effects. All dosimeters gave reproducible readings with mean deviation of 1.8% (SD 0.4) and 2.4% (SD 0.6) for 0 0 and 180 0 incidences, respectively. The mean energy correction factor was found to be 1.1 (range 1.06-1.12). Overall, there was 60% and 40% mean response of the MOSFET at 2 and 3 cm, respectively, from the source. MOSFET results showed good agreement with TLD and parallel plate ion chamber. Linear dose response with threshold voltage shift was observed with applied doses of 0.3 Gy-5 Gy with Ir-192 energy. Linearity (R 2 = 1) was observed in the MOSFET signal with the applied dose range of 0.3 Gy-5 Gy with Ir-192 energy. Fading effects were less than 1% after 10 min and the MOSFET detectors stayed stable (within 5%) over a period of 1 month. The MOSFET response was found to be decreased by approximately 1.5% at 37 deg. C compared to 20 deg. C. The isotropic response of the MOSFET was found to be within ±6%. A maximum deviation of 5.5% was obtained between 0 deg. and 180 deg. for both the axes and this should be considered in clinical applications. The small size, cable-less, instant readout, permanent storage of dose and ease of use make the MOSFET a novel dosimeter and beneficial to patients for skin dose measurements with HDRBT using an Ir-192 source compared to the labour demanding and time-consuming TLDs

  4. Linear distributed source modeling of local field potentials recorded with intra-cortical electrode arrays.

    Directory of Open Access Journals (Sweden)

    Rikkert Hindriks

    Full Text Available Planar intra-cortical electrode (Utah arrays provide a unique window into the spatial organization of cortical activity. Reconstruction of the current source density (CSD underlying such recordings, however, requires "inverting" Poisson's equation. For inter-laminar recordings, this is commonly done by the CSD method, which consists in taking the second-order spatial derivative of the recorded local field potentials (LFPs. Although the CSD method has been tremendously successful in mapping the current generators underlying inter-laminar LFPs, its application to planar recordings is more challenging. While for inter-laminar recordings the CSD method seems reasonably robust against violations of its assumptions, is it unclear as to what extent this holds for planar recordings. One of the objectives of this study is to characterize the conditions under which the CSD method can be successfully applied to Utah array data. Using forward modeling, we find that for spatially coherent CSDs, the CSD method yields inaccurate reconstructions due to volume-conducted contamination from currents in deeper cortical layers. An alternative approach is to "invert" a constructed forward model. The advantage of this approach is that any a priori knowledge about the geometrical and electrical properties of the tissue can be taken into account. Although several inverse methods have been proposed for LFP data, the applicability of existing electroencephalographic (EEG and magnetoencephalographic (MEG inverse methods to LFP data is largely unexplored. Another objective of our study therefore, is to assess the applicability of the most commonly used EEG/MEG inverse methods to Utah array data. Our main conclusion is that these inverse methods provide more accurate CSD reconstructions than the CSD method. We illustrate the inverse methods using event-related potentials recorded from primary visual cortex of a macaque monkey during a motion discrimination task.

  5. Performance of a high-resolution depth-encoding PET detector module using linearly-graded SiPM arrays

    Science.gov (United States)

    Du, Junwei; Bai, Xiaowei; Gola, Alberto; Acerbi, Fabio; Ferri, Alessandro; Piemonte, Claudio; Yang, Yongfeng; Cherry, Simon R.

    2018-02-01

    The goal of this study was to exploit the excellent spatial resolution characteristics of a position-sensitive silicon photomultiplier (SiPM) and develop a high-resolution depth-of-interaction (DOI) encoding positron emission tomography (PET) detector module. The detector consists of a 30  ×  30 array of 0.445  ×  0.445  ×  20 mm3 polished LYSO crystals coupled to two 15.5  ×  15.5 mm2 linearly-graded SiPM (LG-SiPM) arrays at both ends. The flood histograms show that all the crystals in the LYSO array can be resolved. The energy resolution, the coincidence timing resolution and the DOI resolution were 21.8  ±  5.8%, 1.23  ±  0.10 ns and 3.8  ±  1.2 mm, respectively, at a temperature of -10 °C and a bias voltage of 35.0 V. The performance did not degrade significantly for event rates of up to 130 000 counts s-1. This detector represents an attractive option for small-bore PET scanner designs that simultaneously emphasize high spatial resolution and high detection efficiency, important, for example, in preclinical imaging of the rodent brain with neuroreceptor ligands.

  6. Design and experimental validation of Unilateral Linear Halbach magnet arrays for single-sided magnetic resonance.

    Science.gov (United States)

    Bashyam, Ashvin; Li, Matthew; Cima, Michael J

    2018-07-01

    Single-sided NMR has the potential for broad utility and has found applications in healthcare, materials analysis, food quality assurance, and the oil and gas industry. These sensors require a remote, strong, uniform magnetic field to perform high sensitivity measurements. We demonstrate a new permanent magnet geometry, the Unilateral Linear Halbach, that combines design principles from "sweet-spot" and linear Halbach magnets to achieve this goal through more efficient use of magnetic flux. We perform sensitivity analysis using numerical simulations to produce a framework for Unilateral Linear Halbach design and assess tradeoffs between design parameters. Additionally, the use of hundreds of small, discrete magnets within the assembly allows for a tunable design, improved robustness to variability in magnetization strength, and increased safety during construction. Experimental validation using a prototype magnet shows close agreement with the simulated magnetic field. The Unilateral Linear Halbach magnet increases the sensitivity, portability, and versatility of single-sided NMR. Copyright © 2018 Elsevier Inc. All rights reserved.

  7. Diode array pumped, non-linear mirror Q-switched and mode-locked ...

    Indian Academy of Sciences (India)

    A non-linear mirror consisting of a lithium triborate crystal and a dichroic ... effects such as all-optical switching [7,8], nearly degenerate four-wave mixing [9,10], .... is driven by a radio frequency signal of 27.2MHz with a modulation available in.

  8. Quantum criticality of geometric phase in coupled optical cavity arrays under linear quench

    OpenAIRE

    Sarkar, Sujit

    2013-01-01

    The atoms trapped in microcavities and interacting through the exchange of virtual photons can be modeled as an anisotropic Heisenberg spin-1/2 lattice. We study the dynamics of the geometric phase of this system under the linear quenching process of laser field detuning which shows the XX criticality of the geometric phase in presence of single Rabi frequency oscillation. We also study the quantum criticality for different quenching rate in the presence of single or two Rabi frequencies osci...

  9. A linear laser-driver array for optical transmission in the LHC experiments

    CERN Document Server

    Cervelli, G; Moreira, P; Vasey, F

    2000-01-01

    A 4-way linear laser driver has been designed and implemented in a commercial 0.25 mu m CMOS technology. The full-custom IC is intended for analogue and digital data transmission as part of the 50 000 optical fibre links of the CMS particle tracking system. Intrinsic radiation tolerance and specific design methodologies enable the device to operate over 10 years in the harsh radiation environment of the innermost LHC detectors. Although optimised for analogue operation the driver is compatible with LVDS digital signalling. A combination of linearization methods achieves good analogue performance (8-bit equivalent dynamic range with a bandwidth of 100 MHz), while maintaining wide input common-mode range (+or-350 mV) and limited power dissipation. The linearly amplified signal is added to a DC current, which can be set over a wide range (-60 mA to +60 mA). The latter capability allows tracking of changes in laser threshold due to ageing or radiation damage. The driver gain and bias current are set via a serial ...

  10. Statistical MOSFET Parameter Extraction with Parameter Selection for Minimal Point Measurement

    Directory of Open Access Journals (Sweden)

    Marga Alisjahbana

    2013-11-01

    Full Text Available A method to statistically extract MOSFET model parameters from a minimal number of transistor I(V characteristic curve measurements, taken during fabrication process monitoring. It includes a sensitivity analysis of the model, test/measurement point selection, and a parameter extraction experiment on the process data. The actual extraction is based on a linear error model, the sensitivity of the MOSFET model with respect to the parameters, and Newton-Raphson iterations. Simulated results showed good accuracy of parameter extraction and I(V curve fit for parameter deviations of up 20% from nominal values, including for a process shift of 10% from nominal.

  11. The improvement of MOSFET prediction in space environments using the conversion model

    International Nuclear Information System (INIS)

    Shvetzov-Shilovsky, I.N.; Cherepko, S.V.; Pershenkov, V.S.

    1994-01-01

    The modeling of MOS device response to a low dose rate irradiation has been performed. The existing conversion model based on the linear dependence between positive oxide charge annealing and interface trap buildup accurately predicts the long time response of MOSFETs with relatively thick oxides but overestimates the threshold voltage shift for radiation hardened MOSFETs with thin oxides. To give an explanation to this fact, the authors investigate the impulse response function for threshold voltage. A revised model, which incorporates the different energy levels of hole traps in the oxide improves the fit between the model and data and gives an explanation to the fitting parameters dependence on oxide field

  12. Intrinsic Nonlinearities and Layout Impacts of 100 V Integrated Power MOSFETs in Partial SOI Process

    DEFF Research Database (Denmark)

    Fan, Lin; Knott, Arnold; Jørgensen, Ivan Harald Holger

    Parasitic capacitances of power semiconductors are a part of the key design parameters of state-of-the-art very high frequency (VHF) power supplies. In this poster, four 100 V integrated power MOSFETs with different layout structures are designed, implemented, and analyzed in a 0.18 ȝm partial...... Silicon-on-Insulator (SOI) process with a die area 2.31 mm2.  A small-signal model of power MOSFETs is proposed to systematically analyze the nonlinear parasitic capacitances in different transistor states: off-state, sub-threshold region, and on-state in the linear region. 3D plots are used to summarize...

  13. Integrated MOSFET-Embedded-Cantilever-Based Biosensor Characteristic for Detection of Anthrax Simulant

    Energy Technology Data Exchange (ETDEWEB)

    Mostafa, Salwa [University of Tennessee, Knoxville (UTK); Lee, Ida [ORNL; Islam, Syed K [University of Tennessee, Knoxville (UTK); Eliza, Sazia A. [University of Tennessee, Knoxville (UTK); Shekhawat, Gajendra [Northwestern University, Evanston; Dravid, Vinayak [Northwestern University, Evanston; Tulip, Fahmida S [ORNL

    2011-01-01

    In this work, MOSFET-embedded cantilevers are configured as microbial sensors for detection of anthrax simulants, Bacillus thuringiensis. Anthrax simulants attached to the chemically treated gold-coated cantilever cause changes in the MOSFET drain current due to the bending of the cantilever which indicates the detection of anthrax simulant. Electrical properties of the anthrax simulant are also responsible for the change in the drain current. The test results suggest a detection range of 10 L of stimulant test solution (a suspension population of 1.3 107 colony-forming units/mL diluted in 40% ethanol and 60% deionized water) with a linear response of 31 A/ L.

  14. Nonlinear Parasitic Capacitance Modelling of High Voltage Power MOSFETs in Partial SOI Process

    DEFF Research Database (Denmark)

    Fan, Lin; Knott, Arnold; Jørgensen, Ivan Harald Holger

    2016-01-01

    : off-state, sub-threshold region, and on-state in the linear region. A high voltage power MOSFET is designed in a partial Silicon on Insulator (SOI) process, with the bulk as a separate terminal. 3D plots and contour plots of the capacitances versus bias voltages for the transistor summarize...

  15. SEGR- and SEB-hardened structure with DSPSOI in power MOSFETs

    Science.gov (United States)

    Tang, Zhaohuan; Fu, Xinghua; Yang, Fashun; Tan, Kaizhou; Ma, Kui; Wu, Xue; Lin, Jiexing

    2017-12-01

    Single event irradiation-hardened power MOSFET is the most important device for DC/DC converter in space environment application. Single event gate rupture (SEGR) and single event burnout (SEB), which will degrade the running safety and reliability of spacecraft, are the two typical failure modes in power MOSFETs. In this paper, based on recombination mechanism of interface between oxide and silicon, a novel hardened power MOSFETs structure for SEGR and SEB is proposed. The structure comprises double stagger partial silicon-on-insulator (DSPSOI) layers. Results show that the safety operation area (SOA) of a 130 V N-channel power MOSFET in single event irradiation environment is enhanced by up to 50% when the linear-energy-transfer value of heavy ion is a constant of 98 MeV·cm2/mg in the whole incident track, and the other parameters are almost maintained at the same value. Thus this novel structure can be widely used in designing single event irradiation-hardened power MOSFETs. Project supported by the National Natural Science Foundation of China (No. 61464002), the Grand Science and Technology Special Project in Guizhou Province of China (No. [2015]6006), and the Ministry of Education Open Foundation for Semiconductor Power Device Reliability (No. 010201).

  16. Radiation dose response of N channel MOSFET submitted to filtered X-ray photon beam

    Science.gov (United States)

    Gonçalves Filho, Luiz C.; Monte, David S.; Barros, Fabio R.; Santos, Luiz A. P.

    2018-01-01

    MOSFET can operate as a radiation detector mainly in high-energy photon beams, which are normally used in cancer treatments. In general, such an electronic device can work as a dosimeter from threshold voltage shift measurements. The purpose of this article is to show a new way for measuring the dose-response of MOSFETs when they are under X-ray beams generated from 100kV potential range, which is normally used in diagnostic radiology. Basically, the method consists of measuring the MOSFET drain current as a function of the radiation dose. For this the type of device, it has to be biased with a high value resistor aiming to see a substantial change in the drain current after it has been irradiated with an amount of radiation dose. Two types of N channel device were used in the experiment: a signal transistor and a power transistor. The delivered dose to the device was varied and the electrical curves were plotted. Also, a sensitivity analysis of the power MOSFET response was made, by varying the tube potential of about 20%. The results show that both types of devices have responses very similar, the shift in the electrical curve is proportional to the radiation dose. Unlike the power MOSFET, the signal transistor does not provide a linear function between the dose rate and its drain current. We also have observed that the variation in the tube potential of the X-ray equipment produces a very similar dose-response.

  17. An experimental MOSFET approach to characterize (192)Ir HDR source anisotropy.

    Science.gov (United States)

    Toye, W C; Das, K R; Todd, S P; Kenny, M B; Franich, R D; Johnston, P N

    2007-09-07

    The dose anisotropy around a (192)Ir HDR source in a water phantom has been measured using MOSFETs as relative dosimeters. In addition, modeling using the EGSnrc code has been performed to provide a complete dose distribution consistent with the MOSFET measurements. Doses around the Nucletron 'classic' (192)Ir HDR source were measured for a range of radial distances from 5 to 30 mm within a 40 x 30 x 30 cm(3) water phantom, using a TN-RD-50 MOSFET dosimetry system with an active area of 0.2 mm by 0.2 mm. For each successive measurement a linear stepper capable of movement in intervals of 0.0125 mm re-positioned the MOSFET at the required radial distance, while a rotational stepper enabled angular displacement of the source at intervals of 0.9 degrees . The source-dosimeter arrangement within the water phantom was modeled using the standardized cylindrical geometry of the DOSRZnrc user code. In general, the measured relative anisotropy at each radial distance from 5 mm to 30 mm is in good agreement with the EGSnrc simulations, benchmark Monte Carlo simulation and TLD measurements where they exist. The experimental approach employing a MOSFET detection system of small size, high spatial resolution and fast read out capability allowed a practical approach to the determination of dose anisotropy around a HDR source.

  18. Ultrafast Switching Superjunction MOSFETs for Single Phase PFC Applications

    DEFF Research Database (Denmark)

    Hernandez Botella, Juan Carlos; Petersen, Lars Press; Andersen, Michael A. E.

    2014-01-01

    This paper presents a guide on characterizing state-of-the-art silicon superjunction (SJ) devices in the 600V range for single phase power factor correction (PFC) applications. The characterization procedure is based on a minimally inductive double pulse tester (DPT) with a very low intrusive...... current measurement method, which enables reaching the switching speed limits of these devices. Due to the intrinsic low and non-linear capacitances in vertical SJ MOSFETs, special attention needs to be paid to the gate drive design to minimize oscillations and limit the maximum at turn off. This paper...

  19. Improving Current Balance In Parallel MOSFET's

    Science.gov (United States)

    Niedra, Janis M.

    1992-01-01

    Simple circuit makes currents more nearly equal. Addition of diodes and adjustable-tap resistor increases operating range over which drain currents in two unmatched power MOSFET's brought more nearly into balance.

  20. p-MOSFET total dose dosimeter

    Science.gov (United States)

    Buehler, Martin G. (Inventor); Blaes, Brent R. (Inventor)

    1994-01-01

    A p-MOSFET total dose dosimeter where the gate voltage is proportional to the incident radiation dose. It is configured in an n-WELL of a p-BODY substrate. It is operated in the saturation region which is ensured by connecting the gate to the drain. The n-well is connected to zero bias. Current flow from source to drain, rather than from peripheral leakage, is ensured by configuring the device as an edgeless MOSFET where the source completely surrounds the drain. The drain junction is the only junction not connected to zero bias. The MOSFET is connected as part of the feedback loop of an operational amplifier. The operational amplifier holds the drain current fixed at a level which minimizes temperature dependence and also fixes the drain voltage. The sensitivity to radiation is made maximum by operating the MOSFET in the OFF state during radiation soak.

  1. Power MOSFET Thermal Instability Operation Characterization Support

    Science.gov (United States)

    Shue, John L.; Leidecker, Henning

    2010-01-01

    Metal-oxide semiconductor field-effect transistors (MOSFETs) are used extensively in flight hardware and ground support equipment. In the quest for faster switching times and lower "on resistance," the MOSFETs designed from 1998 to the present have achieved most of their intended goals. In the quest for lower on resistance and higher switching speeds, the designs now being produced allow the charge-carrier dominated region (once small and outside of the area of concern) to become important and inside the safe operating area (SOA). The charge-carrier dominated region allows more current to flow as the temperature increases. The higher temperatures produce more current resulting in the beginning of thermal runaway. Thermal runaway is a problem affecting a wide range of modern MOSFETs from more than one manufacturer. This report contains information on MOSFET failures, their causes and test results and information dissemination.

  2. Behavior of MOSFET Amplifier in Radiation Fields

    International Nuclear Information System (INIS)

    Sharshar, K.A.A.; Ashry, M.

    2000-01-01

    MOSFET type 2 N 3823 characteristics and its application as an amplifier are analyzed including the effects of gamma, electron beam 1.5 MeV 25 m A and neutron flux. The 1-V characteristics, transfer curve, and the frequency response of the amplifier, and the amplification factor(A v 0 are discussed with MOSFET circuit parameters. The drain current and the amplitude of the output signal decrease as the absorbed dose increases. The measured values of the amplified signal are attenuated by 30% and 6% after exposing the MOSFET to gamma radiation and electron beam at the same dose respectively. Also for exposure to 4x10 13 N/cm 3 neutrons decreased the measured value of the amplified signal by 73% of the initial values. The decrease in the gain of the MOSFET is due to the degradation of the transconductance. It is also noticed that percentage of the decrease depends on the type of radiation

  3. Quantum Mechanical Modeling of Ballistic MOSFETs

    Science.gov (United States)

    Svizhenko, Alexei; Anantram, M. P.; Govindan, T. R.; Biegel, Bryan (Technical Monitor)

    2001-01-01

    The objective of this project was to develop theory, approximations, and computer code to model quasi 1D structures such as nanotubes, DNA, and MOSFETs: (1) Nanotubes: Influence of defects on ballistic transport, electro-mechanical properties, and metal-nanotube coupling; (2) DNA: Model electron transfer (biochemistry) and transport experiments, and sequence dependence of conductance; and (3) MOSFETs: 2D doping profiles, polysilicon depletion, source to drain and gate tunneling, understand ballistic limit.

  4. Verification of angular dependence in MOSFET detector

    Energy Technology Data Exchange (ETDEWEB)

    Souza, Clayton H.; Shorto, Julian M.B.; Siqueira, Paulo T.D.; Nunes, Maíra G.; Silva Junior, Iremar A.; Yoriyaz, Hélio, E-mail: chsouza@usp.br [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil)

    2017-07-01

    In vivo dosimetry is an essential tool for quality assurance programs, being a procedure commonly performed with thermoluminescent dosimeters (TLDs) or diodes. However, a type of dosimeter that has increasing popularity in recent years is the metal-oxide-semiconductor field effect transistor (MOSFET) detector. MOSFET dosimeters fulfill all the necessary characteristics to realize in vivo dosimetry since it has a small size, good precision and feasibility of measurement, as well as easy handling. Nevertheless, its true differential is to allow reading of the dose in real time, enabling immediate intervention in the correction of physical parameters deviations and anticipation of small anatomical changes in a patient during treatment. In order for MOSFET dosimeter to be better accepted in clinical routine, information reporting performance should be available frequently. For this reason, this work proposes to verify reproducibility and angular dependence of a standard sensitivity MOSFET dosimeter (TN-502RD-H) for Cs-137 and Co-60 sources. Experimental data were satisfactory and MOSFET dosimeter presented a reproducibility of 3.3% and 2.7% (1 SD) for Cs-137 and Co-60 sources, respectively. In addition, an angular dependence of up to 6.1% and 16.3% for both radioactive sources, respectively. It is conclusive that MOSFET dosimeter TN-502RD-H has satisfactory reproducibility and a considerable angular dependence, mainly for the Co-60 source. This means that although precise measurements, special attention must be taken for applications in certain anatomical regions in a patient. (author)

  5. Verification of angular dependence in MOSFET detector

    International Nuclear Information System (INIS)

    Souza, Clayton H.; Shorto, Julian M.B.; Siqueira, Paulo T.D.; Nunes, Maíra G.; Silva Junior, Iremar A.; Yoriyaz, Hélio

    2017-01-01

    In vivo dosimetry is an essential tool for quality assurance programs, being a procedure commonly performed with thermoluminescent dosimeters (TLDs) or diodes. However, a type of dosimeter that has increasing popularity in recent years is the metal-oxide-semiconductor field effect transistor (MOSFET) detector. MOSFET dosimeters fulfill all the necessary characteristics to realize in vivo dosimetry since it has a small size, good precision and feasibility of measurement, as well as easy handling. Nevertheless, its true differential is to allow reading of the dose in real time, enabling immediate intervention in the correction of physical parameters deviations and anticipation of small anatomical changes in a patient during treatment. In order for MOSFET dosimeter to be better accepted in clinical routine, information reporting performance should be available frequently. For this reason, this work proposes to verify reproducibility and angular dependence of a standard sensitivity MOSFET dosimeter (TN-502RD-H) for Cs-137 and Co-60 sources. Experimental data were satisfactory and MOSFET dosimeter presented a reproducibility of 3.3% and 2.7% (1 SD) for Cs-137 and Co-60 sources, respectively. In addition, an angular dependence of up to 6.1% and 16.3% for both radioactive sources, respectively. It is conclusive that MOSFET dosimeter TN-502RD-H has satisfactory reproducibility and a considerable angular dependence, mainly for the Co-60 source. This means that although precise measurements, special attention must be taken for applications in certain anatomical regions in a patient. (author)

  6. Lightning Pin Injection Testing on MOSFETS

    Science.gov (United States)

    Ely, Jay J.; Nguyen, Truong X.; Szatkowski, George N.; Koppen, Sandra V.; Mielnik, John J.; Vaughan, Roger K.; Wysocki, Philip F.; Celaya, Jose R.; Saha, Sankalita

    2009-01-01

    Lightning transients were pin-injected into metal-oxide-semiconductor field-effect transistors (MOSFETs) to induce fault modes. This report documents the test process and results, and provides a basis for subsequent lightning tests. MOSFETs may be present in DC-DC power supplies and electromechanical actuator circuits that may be used on board aircraft. Results show that unprotected MOSFET Gates are susceptible to failure, even when installed in systems in well-shielded and partial-shielded locations. MOSFET Drains and Sources are significantly less susceptible. Device impedance decreased (current increased) after every failure. Such a failure mode may lead to cascading failures, as the damaged MOSFET may allow excessive current to flow through other circuitry. Preliminary assessments on a MOSFET subjected to 20-stroke pin-injection testing demonstrate that Breakdown Voltage, Leakage Current and Threshold Voltage characteristics show damage, while the device continues to meet manufacturer performance specifications. The purpose of this research is to develop validated tools, technologies, and techniques for automated detection, diagnosis and prognosis that enable mitigation of adverse events during flight, such as from lightning transients; and to understand the interplay between lightning-induced surges and aging (i.e. humidity, vibration thermal stress, etc.) on component degradation.

  7. Real time image synthesis on a SIMD linear array processor: algorithms and architectures

    International Nuclear Information System (INIS)

    Letellier, Laurent

    1993-01-01

    Nowadays, image synthesis has become a widely used technique. The impressive computing power required for real time applications necessitates the use of parallel architectures. In this context, we evaluate an SIMD linear parallel architecture, SYMPATI2, dedicated to image processing. The objective of this study is to propose a cost-effective graphics accelerator relying on SYMPATI2's modular and programmable structure. The parallelization of basic image synthesis algorithms on SYMPATI2 enables us to determine its limits in this application field. These limits lead us to evaluate a new structure with a fast intercommunication network between processors, but processors have to support the message consistency, which brings about a strong decrease in performance. To solve this problem, we suggest a simple network whose access priorities are represented by tokens. The simulations of this new architecture indicate that the SIMD mode causes a drastic cut in parallelism. To cope with this drawback, we propose a context switching procedure which reduces the SIMD rigidity and increases the parallelism rate significantly. Then, the graphics accelerator we propose is compared with existing graphics workstations. This comparison indicates that our structure, which is able to accelerate both image synthesis and image processing, is competitive and well-suited for multimedia applications. (author) [fr

  8. Design of a 5-MA 100-ns linear-transformer-driver accelerator for wire array Z-pinch experiments

    Science.gov (United States)

    Zhou, Lin; Li, Zhenghong; Wang, Zhen; Liang, Chuan; Li, Mingjia; Qi, Jianmin; Chu, Yanyun

    2016-03-01

    The linear-transformer-driver (LTD) is a recently developed pulsed-power technology that shows great promise for a number of applications. These include a Z -pinch-driven fission-fusion-hybrid reactor that is being developed by the Chinese Academy of Engineering Physics. In support of the reactor development effort, we are planning to build an LTD-based accelerator that is optimized for driving wire-array Z -pinch loads. The accelerator comprises six modules in parallel, each of which has eight series 0.8-MA LTD cavities in a voltage-adder configuration. Vacuum transmission lines are used from the interior of the adder to the central vacuum chamber where the load is placed. Thus the traditional stack-flashover problem is eliminated. The machine is 3.2 m tall and 12 m in outer diameter including supports. A prototype cavity was built and tested for more than 6000 shots intermittently at a repetition rate of 0.1 Hz. A novel trigger, in which only one input trigger pulse is needed by utilizing an internal trigger brick, was developed and successfully verified in these shots. A full circuit modeling was conducted for the accelerator. The simulation result shows that a current pulse rising to 5.2 MA in 91 ns (10%-90%) can be delivered to the wire-array load, which is 1.5 cm in height, 1.2 cm in initial radius, and 1 mg in mass. The maximum implosion velocity of the load is 32 cm /μ s when compressed to 0.1 of the initial radius. The maximum kinetic energy is 78 kJ, which is 11.7% of the electric energy stored in the capacitors. This accelerator is supposed to enable a radiation energy efficiency of 20%-30%, providing a high efficient facility for research on the fast Z pinch and technologies for repetition-rate-operated accelerators.

  9. MOSFET dosimetry: temperature effects in-vivo

    International Nuclear Information System (INIS)

    Yu, P.K.N.; Cheung, T.; Butson, M.J.; Cancer Services, Wollongong, NSW

    2004-01-01

    Full text: This note investigates temperature effects on dosimetry using a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) for radiotherapy x-ray treatment. This was performed by analysing the dose response and threshold voltage outputs for MOSFET dosimeters as a function of ambient temperature. Results have shown the clinical semiconductor dosimetry system (CSDS) MOSFET provides stable dose measurements with temperatures varying from 15 deg C up to 40 deg C. Thus standard irradiations performed at room temperature can be directly compared to in-vivo dose assessments performed at near body temperature without a temperature correction function. The MOSFET dosimeter threshold voltage varies with temperature and this level is dependant on the dose history of the MOSFET dosimeter. However the variation can be accounted for in the measurement method. For accurate dosimetry the detector should be placed for approximately 60 seconds on a patient to allow thermal equilibrium before measurements are taken with the final reading performed whilst still attached to the patient or conversely left for approximately 120 seconds after removal from the patient if initial readout was measured at room temperature to allow temperature equilibrium to be established. Copyright (2004) Australasian College of Physical Scientists and Engineers in Medicine

  10. Schottky barrier MOSFET systems and fabrication thereof

    Science.gov (United States)

    Welch, J.D.

    1997-09-02

    (MOS) device systems-utilizing Schottky barrier source and drain to channel region junctions are disclosed. Experimentally derived results which demonstrate operation of fabricated N-channel and P-channel Schottky barrier (MOSFET) devices, and of fabricated single devices with operational characteristics similar to (CMOS) and to a non-latching (SRC) are reported. Use of essentially non-rectifying Schottky barriers in (MOS) structures involving highly doped and the like and intrinsic semiconductor to allow non-rectifying interconnection of, and electrical accessing of device regions is also disclosed. Insulator effected low leakage current device geometries and fabrication procedures therefore are taught. Selective electrical interconnection of drain to drain, source to drain, or source to source, of N-channel and/or P-channel Schottky barrier (MOSFET) devices formed on P-type, N-type and Intrinsic semiconductor allows realization of Schottky Barrier (CMOS), (MOSFET) with (MOSFET) load, balanced differential (MOSFET) device systems and inverting and non-inverting single devices with operating characteristics similar to (CMOS), which devices can be utilized in modulation, as well as in voltage controlled switching and effecting a direction of rectification. 89 figs.

  11. Effects of temperature variation on MOSFET dosimetry

    International Nuclear Information System (INIS)

    Cheung Tsang; Butson, Martin J; Yu, Peter K N

    2004-01-01

    This note investigates temperature effects on dosimetry using a metal oxide semiconductor field effect transistor (MOSFET) for radiotherapy x-ray treatment. This was performed by analysing the dose response and threshold voltage outputs for MOSFET dosimeters as a function of ambient temperature. Results have shown that the clinical semiconductor dosimetry system (CSDS) MOSFET provides stable dose measurements with temperatures varying from 15 deg. C up to 40 deg. C. Thus standard irradiations performed at room temperature can be directly compared to in vivo dose assessments performed at near body temperature without a temperature correction function. The MOSFET dosimeter threshold voltage varies with temperature and this level is dependent on the dose history of the MOSFET dosimeter. However, the variation can be accounted for in the measurement method. For accurate dosimetry, the detector should be placed for approximately 60 s on a patient to allow thermal equilibrium before measurements are taken with the final reading performed whilst still attached to the patient or conversely left for approximately 120 s after removal from the patient if initial readout was measured at room temperature to allow temperature equilibrium to be established. (note)

  12. EMG-Torque Relation in Chronic Stroke: A Novel EMG Complexity Representation With a Linear Electrode Array.

    Science.gov (United States)

    Zhang, Xu; Wang, Dongqing; Yu, Zaiyang; Chen, Xiang; Li, Sheng; Zhou, Ping

    2017-11-01

    This study examines the electromyogram (EMG)-torque relation for chronic stroke survivors using a novel EMG complexity representation. Ten stroke subjects performed a series of submaximal isometric elbow flexion tasks using their affected and contralateral arms, respectively, while a 20-channel linear electrode array was used to record surface EMG from the biceps brachii muscles. The sample entropy (SampEn) of surface EMG signals was calculated with both global and local tolerance schemes. A regression analysis was performed between SampEn of each channel's surface EMG and elbow flexion torque. It was found that a linear regression can be used to well describe the relation between surface EMG SampEn and the torque. Each channel's root mean square (RMS) amplitude of surface EMG signal in the different torque level was computed to determine the channel with the highest EMG amplitude. The slope of the regression (observed from the channel with the highest EMG amplitude) was smaller on the impaired side than on the nonimpaired side in 8 of the 10 subjects, regardless of the tolerance scheme (global or local) and the range of torques (full or matched range) used for comparison. The surface EMG signals from the channels above the estimated muscle innervation zones demonstrated significantly lower levels of complexity compared with other channels between innervation zones and muscle tendons. The study provides a novel point of view of the EMG-torque relation in the complexity domain, and reveals its alterations post stroke, which are associated with complex neural and muscular changes post stroke. The slope difference between channels with regard to innervation zones also confirms the relevance of electrode position in surface EMG analysis.

  13. An intelligent sensor array distributed system for vibration analysis and acoustic noise characterization of a linear switched reluctance actuator.

    Science.gov (United States)

    Salvado, José; Espírito-Santo, António; Calado, Maria

    2012-01-01

    This paper proposes a distributed system for analysis and monitoring (DSAM) of vibrations and acoustic noise, which consists of an array of intelligent modules, sensor modules, communication bus and a host PC acting as data center. The main advantages of the DSAM are its modularity, scalability, and flexibility for use of different type of sensors/transducers, with analog or digital outputs, and for signals of different nature. Its final cost is also significantly lower than other available commercial solutions. The system is reconfigurable, can operate either with synchronous or asynchronous modes, with programmable sampling frequencies, 8-bit or 12-bit resolution and a memory buffer of 15 kbyte. It allows real-time data-acquisition for signals of different nature, in applications that require a large number of sensors, thus it is suited for monitoring of vibrations in Linear Switched Reluctance Actuators (LSRAs). The acquired data allows the full characterization of the LSRA in terms of its response to vibrations of structural origins, and the vibrations and acoustic noise emitted under normal operation. The DSAM can also be used for electrical machine condition monitoring, machine fault diagnosis, structural characterization and monitoring, among other applications.

  14. An Intelligent Sensor Array Distributed System for Vibration Analysis and Acoustic Noise Characterization of a Linear Switched Reluctance Actuator

    Directory of Open Access Journals (Sweden)

    Maria Calado

    2012-06-01

    Full Text Available This paper proposes a distributed system for analysis and monitoring (DSAM of vibrations and acoustic noise, which consists of an array of intelligent modules, sensor modules, communication bus and a host PC acting as data center. The main advantages of the DSAM are its modularity, scalability, and flexibility for use of different type of sensors/transducers, with analog or digital outputs, and for signals of different nature. Its final cost is also significantly lower than other available commercial solutions. The system is reconfigurable, can operate either with synchronous or asynchronous modes, with programmable sampling frequencies, 8-bit or 12-bit resolution and a memory buffer of 15 kbyte. It allows real-time data-acquisition for signals of different nature, in applications that require a large number of sensors, thus it is suited for monitoring of vibrations in Linear Switched Reluctance Actuators (LSRAs. The acquired data allows the full characterization of the LSRA in terms of its response to vibrations of structural origins, and the vibrations and acoustic noise emitted under normal operation. The DSAM can also be used for electrical machine condition monitoring, machine fault diagnosis, structural characterization and monitoring, among other applications.

  15. A Series-Fed Linear Substrate-Integrated Dielectric Resonator Antenna Array for Millimeter-Wave Applications

    Directory of Open Access Journals (Sweden)

    Ke Gong

    2018-01-01

    Full Text Available A series-fed linear substrate-integrated dielectric resonator antenna array (SIDRAA is presented for millimeter-wave applications, in which the substrate-integrated dielectric resonator antenna (SIDRA elements and the feeding structure can be codesigned and fabricated using the same planar process. A prototype 4 × 1 SIDRAA is designed at Ka-band and fabricated with a two-layer printed circuit board (PCB technology. Four SIDRAs are implemented in the Rogers RT6010 substrate using the perforation technique and fed by a compact substrate-integrated waveguide (SIW through four longitudinal coupling slots within the Rogers RT5880 substrate. The return loss, radiation patterns, and antenna gain were experimentally studied, and good agreement between the measured and simulated results is observed. The SIDRAA example provides a bandwidth of about 10% around 34.5 GHz for 10 dB return loss and stable broadside radiation patterns with the peak gain of 10.5–11.5 dBi across the band.

  16. Calculating Second-Order Effects in MOSFET's

    Science.gov (United States)

    Benumof, Reuben; Zoutendyk, John A.; Coss, James R.

    1990-01-01

    Collection of mathematical models includes second-order effects in n-channel, enhancement-mode, metal-oxide-semiconductor field-effect transistors (MOSFET's). When dimensions of circuit elements relatively large, effects neglected safely. However, as very-large-scale integration of microelectronic circuits leads to MOSFET's shorter or narrower than 2 micrometer, effects become significant in design and operation. Such computer programs as widely-used "Simulation Program With Integrated Circuit Emphasis, Version 2" (SPICE 2) include many of these effects. In second-order models of n-channel, enhancement-mode MOSFET, first-order gate-depletion region diminished by triangular-cross-section deletions on end and augmented by circular-wedge-cross-section bulges on sides.

  17. Magnetic quantum ratchet effect in Si-MOSFETs

    International Nuclear Information System (INIS)

    Ganichev, S D; Karch, J; Kamann, J; Tarasenko, S A; Kvon, Z D

    2014-01-01

    We report on the observation of magnetic quantum ratchet effect in metal-oxide-semiconductor field-effect-transistors on silicon surface (Si-MOSFETs). We show that the excitation of an unbiased transistor by ac electric field of terahertz radiation at normal incidence leads to a direct electric current between the source and drain contacts if the transistor is subjected to an in-plane magnetic field. The current rises linearly with the magnetic field strength and quadratically with the ac electric field amplitude. It depends on the polarization state of the ac field and can be induced by both linearly and circularly polarized radiation. We present the quasi-classical and quantum theories of the observed effect and show that the current originates from the Lorentz force acting upon carriers in asymmetric inversion channels of the transistors. (paper)

  18. Performance characteristics of mobile MOSFET dosimeter for kilovoltage X-rays used in image guided radiotherapy.

    Science.gov (United States)

    Kumar, A Sathish; Singh, I Rabi Raja; Sharma, S D; Ravindran, B Paul

    2015-01-01

    The main objective of this study was to investigate the characteristics of metal oxide semiconductor field effect transistor (MOSFET) dosimeter for kilovoltage (kV) X-ray beams in order to perform the in vivo dosimetry during image guidance in radiotherapy. The performance characteristics of high sensitivity MOSFET dosimeters were investigated for 80, 90, 100, 110, 120, and 125 kV X-ray beams used for imaging in radiotherapy. This study was performed using Clinac 2100 C/D medical electron linear accelerator with on-board imaging and kV cone beam computed tomography system. The characteristics studied in this work include energy dependence, angular dependence, and linearity. The X-ray beam outputs were measured as per American Association of Physicists in Medicine (AAPM) TG 61 recommendations using PTW parallel plate (PP) ionization chamber, which was calibrated in terms of air kerma (Nk) by the National Standard Laboratory. The MOSFET dosimeters were calibrated against the PP ionization chamber for all the kV X-ray beams and the calibration coefficient was found to be 0.11 cGy/mV with a standard deviation of about ±1%. The response of MOSFET was found to be energy independent for the kV X-ray energies used in this study. The response of the MOSFET dosimeter was also found independent of angle of incidence for the gantry angles in the range of 0° to 360° in-air as well as at 3 cm depth in tissue equivalent phantom.

  19. Compact MOSFET models for VLSI design

    CERN Document Server

    Bhattacharyya, A B

    2009-01-01

    Practicing designers, students, and educators in the semiconductor field face an ever expanding portfolio of MOSFET models. In Compact MOSFET Models for VLSI Design , A.B. Bhattacharyya presents a unified perspective on the topic, allowing the practitioner to view and interpret device phenomena concurrently using different modeling strategies. Readers will learn to link device physics with model parameters, helping to close the gap between device understanding and its use for optimal circuit performance. Bhattacharyya also lays bare the core physical concepts that will drive the future of VLSI.

  20. Design of a 5-MA 100-ns linear-transformer-driver accelerator for wire array Z-pinch experiments

    Directory of Open Access Journals (Sweden)

    Zhou Lin

    2016-03-01

    Full Text Available The linear-transformer-driver (LTD is a recently developed pulsed-power technology that shows great promise for a number of applications. These include a Z-pinch-driven fission-fusion-hybrid reactor that is being developed by the Chinese Academy of Engineering Physics. In support of the reactor development effort, we are planning to build an LTD-based accelerator that is optimized for driving wire-array Z-pinch loads. The accelerator comprises six modules in parallel, each of which has eight series 0.8-MA LTD cavities in a voltage-adder configuration. Vacuum transmission lines are used from the interior of the adder to the central vacuum chamber where the load is placed. Thus the traditional stack-flashover problem is eliminated. The machine is 3.2 m tall and 12 m in outer diameter including supports. A prototype cavity was built and tested for more than 6000 shots intermittently at a repetition rate of 0.1 Hz. A novel trigger, in which only one input trigger pulse is needed by utilizing an internal trigger brick, was developed and successfully verified in these shots. A full circuit modeling was conducted for the accelerator. The simulation result shows that a current pulse rising to 5.2 MA in 91 ns (10%–90% can be delivered to the wire-array load, which is 1.5 cm in height, 1.2 cm in initial radius, and 1 mg in mass. The maximum implosion velocity of the load is 32  cm/μs when compressed to 0.1 of the initial radius. The maximum kinetic energy is 78 kJ, which is 11.7% of the electric energy stored in the capacitors. This accelerator is supposed to enable a radiation energy efficiency of 20%–30%, providing a high efficient facility for research on the fast Z pinch and technologies for repetition-rate-operated accelerators.

  1. Analog Amplitude Modulation of a High Voltage, Solid State Inductive Adder, Pulse Generator Using MOSFETS

    International Nuclear Information System (INIS)

    Gower, E J; Sullivan, J S

    2002-01-01

    High voltage, solid state, inductive adder, pulse generators have found increasing application as fast kicker pulse modulators for charged particle beams. The solid state, inductive adder, pulse generator is similar in operation to the linear induction accelerator. The main difference is that the solid state, adder couples energy by transformer action from multiple primaries to a voltage summing stalk, instead of an electron beam. Ideally, the inductive adder produces a rectangular voltage pulse at the load. In reality, there is usually some voltage variation at the load due to droop on primary circuit storage capacitors, or, temporal variations in the load impedance. Power MOSFET circuits have been developed to provide analog modulation of the output voltage amplitude of a solid state, inductive adder, pulse generator. The modulation is achieved by including MOSFET based, variable subtraction circuits in the multiple primary stack. The subtraction circuits can be used to compensate for voltage droop, or, to tailor the output pulse amplitude to provide a desired effect in the load. Power MOSFET subtraction circuits have been developed to modulate short, temporal (60-400 ns), voltage and current pulses. MOSFET devices have been tested up to 20 amps and 800 Volts with a band pass of 50 MHz. An analog modulation cell has been tested in a five cell high, voltage adder stack

  2. A comparative study of the work involved in measuring profiles using ion chambers, a linear diode array and film

    International Nuclear Information System (INIS)

    Rykers, K.L.; RMIT University, Melbourne, VIC; Royal North Shore Hospital, St Leonards, NSW; Geso, M.; Brown, G.M.; Olilver, L.D.

    1996-01-01

    Full text: The usefulness of film to perform dosimetric measurement is a topic often discussed and not clearly agreed upon. While single point measurement detectors give consistent and reliable results for physically wedged fields they cannot be easily used to measure intensity modulated fields. In this work a method of using film to measure profiles for dynamically wedged (DW) fields is presented. The method of positioning film for the subsequent generation of a conversion function to allow for the variation in films' response with energy is outlined. Furthermore, the profiles determined by film measurement are compared with those measured with single point measurement detector and an array of silicon diodes. Both Leavitt et. al. 8 and Weber et. al. 7 have reported on the successful use of the linear diode array (LDA) in measuring dynamic wedge data. This claim will be investigated. The film used in this work was Kodak X-Omat V. The solid water was RW3 with high water equivalency in the range from 137 CS to 50 MV for photons and electrons. All films were processed in an automatic processor. Both the Wellhoefer and the Scanditronix RFA 300 densitometers were used to take film readings. Wedged field and open field profiles measurements were taken in water using both the Wellhoefer IC-10 chamber, the Scanditronix RFA 300 RK chamber and the Scanditronix LDA . The energy investigated was 6 MV at 1.5, 5.0, 10.0, 15.0 and 20.0 cm for a Varian 2100C machine. More consistent density readings were obtained when films were processed with the edge of the film that was parallel to the beam axis was fed into the processor first; rather than when the beam incident edge was fed into the processor first. Comparing the position of the central axis (CAX) of open films from the geometric method developed in this work to the software determined CAX (as available with the Wellhoefer software), it was found that the difference in CAX positions varied between -0.03 to +0.04 cm at 2.5 cm

  3. [Development of a portable mid-infrared rapid analyzer for oil concentration in water based on MEMS linear sensor array].

    Science.gov (United States)

    Gao, Zhi-fan; Zeng, Li-bo; Shi, Lei; Li, Kai; Yang, Yuan-zhou; Wu, Qiong-shui

    2014-06-01

    Aiming at the existing problems such as weak environmental adaptability, low analytic efficiency and poor measuring repeatability in the traditional spectral oil analyzers, the present paper designed a portable mid-infrared rapid analyzer for oil concentration in water. To reduce the volume of the instrument, the non-symmetrical folding M-type Czerny-Turner optical structure was adopted in the core optical path. With a periodically rotating chopper, controlled by digital PID algorithm, applied for infrared light modulation, the modulating accuracy reached ±0.5%. Different from traditional grating-scanning spectrophotometers, this instrument used a fixed grating for light dispersion and avoided rotating error in the course of the measuring procedures. A new-type MEMS infrared linear sensor array was applied for modulated spectral signals detection, which improved the measuring efficiency remarkably. Optical simulation and experimental results indicate that the spectral range is 2 800 - 3 200 cm(-1), the spectral resolution is 6 cm(-1) (@3 130 cm(-1)), and the signal to noise ratio is up to 5 200 : 1. The acquisition time is 13 milliseconds per spectrogram, and the standard deviation of absorbance is less than 3 x 10(-3). These performances meet the standards of oil concentration measurements perfectly. Compared with traditional infrared spectral analyzers for oil concentration, the instrument demonstrated in this paper has many advantages such as smaller size, more efficiency, higher precision, and stronger vibration & moisture isolation. In addition, the proposed instrument is especially suitable for the environmental monitoring departments to implement real-time measurements in the field for oil concentration in water, hence it has broad prospects of application in the field of water quality monitoring.

  4. Screening of Carotenoids in Tomato Fruits by Using Liquid Chromatography with Diode Array-Linear Ion Trap Mass Spectrometry Detection.

    Science.gov (United States)

    Gentili, Alessandra; Caretti, Fulvia; Ventura, Salvatore; Pérez-Fernández, Virginia; Venditti, Alessandro; Curini, Roberta

    2015-08-26

    This paper presents an analytical strategy for a large-scale screening of carotenoids in tomato fruits by exploiting the potentialities of the triple quadrupole-linear ion trap hybrid mass spectrometer (QqQLIT). The method involves separation on C30 reversed-phase column and identification by means of diode array detection (DAD) and atmospheric pressure chemical ionization-mass spectrometry (APCI-MS). The authentic standards of six model compounds were used to optimize the separative conditions and to predict the chromatographic behavior of untargeted carotenoids. An information dependent acquisition (IDA) was performed with (i) enhanced-mass scan (EMS) as the survey scan, (ii) enhanced-resolution (ER) scan to obtain the exact mass of the precursor ions (16-35 ppm), and (iii) enhanced product ion (EPI) scan as dependent scan to obtain structural information. LC-DAD-multiple reaction monitoring (MRM) chromatograms were also acquired for the identification of targeted carotenoids occurring at low concentrations; for the first time, the relative abundance between the MRM transitions (ion ratio) was used as an extra tool for the MS distinction of structural isomers and the related families of geometrical isomers. The whole analytical strategy was high-throughput, because a great number of experimental data could be acquired with few analytical steps, and cost-effective, because only few standards were used; when applied to characterize some tomato varieties ('Tangerine', 'Pachino', 'Datterino', and 'Camone') and passata of 'San Marzano' tomatoes, our method succeeded in identifying up to 44 carotenoids in the 'Tangerine'" variety.

  5. Comparison of the cobas Human Papillomavirus (HPV) Test with the Hybrid Capture 2 and Linear Array HPV DNA Tests

    Science.gov (United States)

    Sadorra, Mark; LaMere, Brandon J.; Kail, Randi; Aldrich, Carrie; Kinney, Walter; Fetterman, Barbara; Lorey, Thomas; Schiffman, Mark; Castle, Philip E.

    2012-01-01

    The cobas human papillomavirus (HPV) test (cobas) was recently approved by the U.S. Food and Drug Administration (FDA) and identifies HPV16 and HPV18 separately as well as detecting a pool of 11 HR-HPV genotypes (HPV31, -33, -35, -39, -45, -51, -52, -56, -58, -59, -68) and also HPV66. We compared cobas, Linear Array (LA), and Hybrid Capture 2 (HC2) assays for detection of carcinogenic HPV DNA, and cobas and LA for detection of HPV16 and HPV18 DNA, among the first 1,852 women enrolled in the HPV Persistence and Progression Cohort (PaP Cohort) study. Specimens were tested by all 3 assays 1 year after an HC2-positive result. In 1,824 specimens with cobas results, cobas had an 85.9% agreement with HC2 and 91.0% agreement with LA for carcinogenic HPV detection. When results between cobas and HC2 disagreed, cobas tended to call more women HPV positive (P < 0.01). Categorizing cobas and LA results hierarchically according to cancer risk (HPV16, HPV18, other carcinogenic HPV genotypes, or carcinogen negative), there was a 90% agreement for all categories of HPV (n = 1,824). We found good agreement between the two U.S. FDA-approved HPV tests, with discrepancies between the two assays due to specific characteristics of the individual assays. Additional studies are needed to compare HC2 and cobas for detecting and predicting CIN3 to understand the clinical implications of the discrepant test results between the two tests. PMID:22075592

  6. Comparison of Thrust Characteristics in Pencil Sized Cylinder-type Linear Motors with Different Magnet Arrays(Asia-Pacific Symposium on Applied Electromagnetics and Mechanics (APSAEM08))

    OpenAIRE

    K., Nakaiwa; A., Yamada; K., Tashiro; H., Wakiwaka; Tamagawa-Seiki Co., Ltd; Shinshu University; Shinshu University; Shinshu University

    2009-01-01

    From a strong demand on the miniaturization of a chip mounter or a semiconductor device, the thrust improvement considering the magnets arrangement is studied. We accept a core stator with a Halbach type magnet array for a current linear motor. The thrust characteristics are compared with two kinds of mover, a NS magnet array and a Halbach magnet array.

  7. Monte carlo study of MOSFET packaging, optimised for improved energy response: single MOSFET filtration.

    Science.gov (United States)

    Othman, M A R; Cutajar, D L; Hardcastle, N; Guatelli, S; Rosenfeld, A B

    2010-09-01

    Monte Carlo simulations of the energy response of a conventionally packaged single metal-oxide field effect transistors (MOSFET) detector were performed with the goal of improving MOSFET energy dependence for personal accident or military dosimetry. The MOSFET detector packaging was optimised. Two different 'drop-in' design packages for a single MOSFET detector were modelled and optimised using the GEANT4 Monte Carlo toolkit. Absorbed photon dose simulations of the MOSFET dosemeter placed in free-air response, corresponding to the absorbed doses at depths of 0.07 mm (D(w)(0.07)) and 10 mm (D(w)(10)) in a water equivalent phantom of size 30 x 30 x 30 cm(3) for photon energies of 0.015-2 MeV were performed. Energy dependence was reduced to within + or - 60 % for photon energies 0.06-2 MeV for both D(w)(0.07) and D(w)(10). Variations in the response for photon energies of 15-60 keV were 200 and 330 % for D(w)(0.07) and D(w)(10), respectively. The obtained energy dependence was reduced compared with that for conventionally packaged MOSFET detectors, which usually exhibit a 500-700 % over-response when used in free-air geometry.

  8. Separation Test Method for Investigation of Current Density Effects on Bond Wires of SiC Power MOSFET Modules

    DEFF Research Database (Denmark)

    Luo, Haoze; Iannuzzo, Francesco; Blaabjerg, Frede

    2017-01-01

    and average temperature during the test. By analyzing the output characteristics of the linear region of MOSFET, the constraint relations among the gate voltage, on-state voltage drop and junction temperature are revealed in this paper. The one-to-one correspondence between gate voltage and conduction power...... loss can be used to adjust the current density under fixed temperature swing and average temperature. The commercial Silicon Carbide (SiC) MOSFET modules are tested to experimentally verify the proposed method. Finally, the effectiveness of proposed test method is validated by the experimental results....

  9. Driver Circuit For High-Power MOSFET's

    Science.gov (United States)

    Letzer, Kevin A.

    1991-01-01

    Driver circuit generates rapid-voltage-transition pulses needed to switch high-power metal oxide/semiconductor field-effect transistor (MOSFET) modules rapidly between full "on" and full "off". Rapid switching reduces time of overlap between appreciable current through and appreciable voltage across such modules, thereby increasing power efficiency.

  10. Progress in MOSFET double-layer metalization

    Science.gov (United States)

    Gassaway, J. D.; Trotter, J. D.; Wade, T. E.

    1980-01-01

    Report describes one-year research effort in VLSL fabrication. Four activities are described: theoretical study of two-dimensional diffusion in SOS (silicon-on-sapphire); setup of sputtering system, furnaces, and photolithography equipment; experiments on double layer metal; and investigation of two-dimensional modeling of MOSFET's (metal-oxide-semiconductor field-effect transistors).

  11. Application of commercial MOSFET detectors for in vivo dosimetry in the therapeutic x-ray range from 80 kV to 250 kV

    International Nuclear Information System (INIS)

    Ehringfeld, Christian; Schmid, Susanne; Poljanc, Karin; Kirisits, Christian; Aiginger, Hannes; Georg, Dietmar

    2005-01-01

    The purpose of this study was to investigate the dosimetric characteristics (energy dependence, linearity, fading, reproducibility, etc) of MOSFET detectors for in vivo dosimetry in the kV x-ray range. The experience of MOSFET in vivo dosimetry in a pre-clinical study using the Alderson phantom and in clinical practice is also reported. All measurements were performed with a Gulmay D3300 kV unit and TN-502RDI MOSFET detectors. For the determination of correction factors different solid phantoms and a calibrated Farmer-type chamber were used. The MOSFET signal was linear with applied dose in the range from 0.2 to 2 Gy for all energies. Due to fading it is recommended to read the MOSFET signal during the first 15 min after irradiation. For long time intervals between irradiation and readout the fading can vary largely with the detector. The temperature dependence of the detector signal was small (0.3% deg. C -1 ) in the temperature range between 22 and 40 deg. C. The variation of the measuring signal with beam incidence amounts to ±5% and should be considered in clinical applications. Finally, for entrance dose measurements energy-dependent calibration factors, correction factors for field size and irradiated cable length were applied. The overall accuracy, for all measurements, was dominated by reproducibility as a function of applied dose. During the pre-clinical in vivo study, the agreement between MOSFET and TLD measurements was well within 3%. The results of MOSFET measurements, to determine the dosimetric characteristics as well as clinical applications, showed that MOSFET detectors are suitable for in vivo dosimetry in the kV range. However, some energy-dependent dosimetry effects need to be considered and corrected for. Due to reproducibility effects at low dose levels accurate in vivo measurements are only possible if the applied dose is equal to or larger than 2 Gy

  12. Application of commercial MOSFET detectors for in vivo dosimetry in the therapeutic x-ray range from 80 kV to 250 kV.

    Science.gov (United States)

    Ehringfeld, Christian; Schmid, Susanne; Poljanc, Karin; Kirisits, Christian; Aiginger, Hannes; Georg, Dietmar

    2005-01-21

    The purpose of this study was to investigate the dosimetric characteristics (energy dependence, linearity, fading, reproducibility, etc) of MOSFET detectors for in vivo dosimetry in the kV x-ray range. The experience of MOSFET in vivo dosimetry in a pre-clinical study using the Alderson phantom and in clinical practice is also reported. All measurements were performed with a Gulmay D3300 kV unit and TN-502RDI MOSFET detectors. For the determination of correction factors different solid phantoms and a calibrated Farmer-type chamber were used. The MOSFET signal was linear with applied dose in the range from 0.2 to 2 Gy for all energies. Due to fading it is recommended to read the MOSFET signal during the first 15 min after irradiation. For long time intervals between irradiation and readout the fading can vary largely with the detector. The temperature dependence of the detector signal was small (0.3% degrees C(-1)) in the temperature range between 22 and 40 degrees C. The variation of the measuring signal with beam incidence amounts to +/-5% and should be considered in clinical applications. Finally, for entrance dose measurements energy-dependent calibration factors, correction factors for field size and irradiated cable length were applied. The overall accuracy, for all measurements, was dominated by reproducibility as a function of applied dose. During the pre-clinical in vivo study, the agreement between MOSFET and TLD measurements was well within 3%. The results of MOSFET measurements, to determine the dosimetric characteristics as well as clinical applications, showed that MOSFET detectors are suitable for in vivo dosimetry in the kV range. However, some energy-dependent dosimetry effects need to be considered and corrected for. Due to reproducibility effects at low dose levels accurate in vivo measurements are only possible if the applied dose is equal to or larger than 2 Gy.

  13. Imaging San Jacinto Fault damage zone structure using dense linear arrays: application of ambient noise tomography, Rayleigh wave ellipticity, and site amplification

    Science.gov (United States)

    Wang, Y.; Lin, F. C.; Allam, A. A.; Ben-Zion, Y.

    2017-12-01

    The San Jacinto fault is presently the most seismically active component of the San Andreas Transform system in Southern California. To study the damage zone structure, two dense linear geophone arrays (BS and RR) were deployed across the Clark segment of the San Jacinto Fault between Anza and Hemet during winter 2015 and Fall 2016, respectively. Both arrays were 2 km long with 20 m station spacing. Month-long three-component ambient seismic noise data were recorded and used to calculate multi-channel cross-correlation functions. All three-component noise records of each array were normalized simultaneously to retain relative amplitude information between different stations and different components. We observed clear Rayleigh waves and Love waves on the cross-correlations of both arrays at 0.3 - 1 s period. The phase travel times of the Rayleigh waves on both arrays were measured by frequency-time analysis (FTAN), and inverted for Rayleigh wave phase velocity profiles of the upper 500 m depth. For both arrays, we observe prominent asymmetric low velocity zones which narrow with depth. At the BS array near the Hemet Stepover, an approximately 250m wide slow zone is observed to be offset by 75m to the northeast of the surface fault trace. At the RR array near the Anza segment of the fault, a similar low velocity zone width and offset are observed, along with a 10% across-fault velocity contrast. Analyses of Rayleigh wave ellipticity (H/V ratio), Love wave phase travel times, and site amplification are in progress. By using multiple measurements from ambient noise cross-correlations, we can obtain strong constraints on the local damage zone structure of the San Jacinto Fault. The results contribute to improved understanding of rupture directivity, maximum earthquake magnitude and more generally seismic hazard associated with the San Jacinto fault zone.

  14. Physical modeling of SOS P channel MOSFET and comparison with bulk devices

    International Nuclear Information System (INIS)

    Merckel, G.; Gris, Y.

    1976-01-01

    The main technological steps applied to P channel MOSFET's on SOS are recalled. A large-signal model derived from a physical analysis is presented. Gate-source and gate-drain capacitors have been linearized versus drain voltage. Due to low injection, the only diffusion capacitance of the source-substrate forward biased diode, and the depletion capacitance of the drain-substrate reverse biased diode were taken into account. Some typical parameters measured on SOS and bulk devices are given [fr

  15. On the role of energy deposition in triggering SEGR in power MOSFETs

    International Nuclear Information System (INIS)

    Selva, L.E.; Swift, G.M.; Taylor, W.A.; Edmonds, L.D.

    1999-01-01

    Single event gate rupture (SEGR) was studied using three types of power MOSFET devices with ions having incident linear energy transfers (LETs) in silicon from 26 to 82 MeV·cm 2 /mg. Results are: (1) consistent with Wrobel's oxide breakdown for V DS = 0 volts (for both normal incidence and angle); and (2) when V GS = 0 volts, energy deposited near the Si/SiO 2 interface is more important than the energy deposited deeper in the epi

  16. Monte Carlo simulation of MOSFET detectors for high-energy photon beams using the PENELOPE code

    Science.gov (United States)

    Panettieri, Vanessa; Amor Duch, Maria; Jornet, Núria; Ginjaume, Mercè; Carrasco, Pablo; Badal, Andreu; Ortega, Xavier; Ribas, Montserrat

    2007-01-01

    The aim of this work was the Monte Carlo (MC) simulation of the response of commercially available dosimeters based on metal oxide semiconductor field effect transistors (MOSFETs) for radiotherapeutic photon beams using the PENELOPE code. The studied Thomson&Nielsen TN-502-RD MOSFETs have a very small sensitive area of 0.04 mm2 and a thickness of 0.5 µm which is placed on a flat kapton base and covered by a rounded layer of black epoxy resin. The influence of different metallic and Plastic water™ build-up caps, together with the orientation of the detector have been investigated for the specific application of MOSFET detectors for entrance in vivo dosimetry. Additionally, the energy dependence of MOSFET detectors for different high-energy photon beams (with energy >1.25 MeV) has been calculated. Calculations were carried out for simulated 6 MV and 18 MV x-ray beams generated by a Varian Clinac 1800 linear accelerator, a Co-60 photon beam from a Theratron 780 unit, and monoenergetic photon beams ranging from 2 MeV to 10 MeV. The results of the validation of the simulated photon beams show that the average difference between MC results and reference data is negligible, within 0.3%. MC simulated results of the effect of the build-up caps on the MOSFET response are in good agreement with experimental measurements, within the uncertainties. In particular, for the 18 MV photon beam the response of the detectors under a tungsten cap is 48% higher than for a 2 cm Plastic water™ cap and approximately 26% higher when a brass cap is used. This effect is demonstrated to be caused by positron production in the build-up caps of higher atomic number. This work also shows that the MOSFET detectors produce a higher signal when their rounded side is facing the beam (up to 6%) and that there is a significant variation (up to 50%) in the response of the MOSFET for photon energies in the studied energy range. All the results have shown that the PENELOPE code system can

  17. Monte Carlo simulation of MOSFET detectors for high-energy photon beams using the PENELOPE code.

    Science.gov (United States)

    Panettieri, Vanessa; Duch, Maria Amor; Jornet, Núria; Ginjaume, Mercè; Carrasco, Pablo; Badal, Andreu; Ortega, Xavier; Ribas, Montserrat

    2007-01-07

    The aim of this work was the Monte Carlo (MC) simulation of the response of commercially available dosimeters based on metal oxide semiconductor field effect transistors (MOSFETs) for radiotherapeutic photon beams using the PENELOPE code. The studied Thomson&Nielsen TN-502-RD MOSFETs have a very small sensitive area of 0.04 mm(2) and a thickness of 0.5 microm which is placed on a flat kapton base and covered by a rounded layer of black epoxy resin. The influence of different metallic and Plastic water build-up caps, together with the orientation of the detector have been investigated for the specific application of MOSFET detectors for entrance in vivo dosimetry. Additionally, the energy dependence of MOSFET detectors for different high-energy photon beams (with energy >1.25 MeV) has been calculated. Calculations were carried out for simulated 6 MV and 18 MV x-ray beams generated by a Varian Clinac 1800 linear accelerator, a Co-60 photon beam from a Theratron 780 unit, and monoenergetic photon beams ranging from 2 MeV to 10 MeV. The results of the validation of the simulated photon beams show that the average difference between MC results and reference data is negligible, within 0.3%. MC simulated results of the effect of the build-up caps on the MOSFET response are in good agreement with experimental measurements, within the uncertainties. In particular, for the 18 MV photon beam the response of the detectors under a tungsten cap is 48% higher than for a 2 cm Plastic water cap and approximately 26% higher when a brass cap is used. This effect is demonstrated to be caused by positron production in the build-up caps of higher atomic number. This work also shows that the MOSFET detectors produce a higher signal when their rounded side is facing the beam (up to 6%) and that there is a significant variation (up to 50%) in the response of the MOSFET for photon energies in the studied energy range. All the results have shown that the PENELOPE code system can successfully

  18. Time-dependent transport of a localized surface plasmon through a linear array of metal nanoparticles: Precursor and normal mode contributions

    Science.gov (United States)

    Compaijen, P. J.; Malyshev, V. A.; Knoester, J.

    2018-02-01

    We theoretically investigate the time-dependent transport of a localized surface plasmon excitation through a linear array of identical and equidistantly spaced metal nanoparticles. Two different signals propagating through the array are found: one traveling with the group velocity of the surface plasmon polaritons of the system and damped exponentially, and the other running with the speed of light and decaying in a power-law fashion, as x-1 and x-2 for the transversal and longitudinal polarizations, respectively. The latter resembles the Sommerfeld-Brillouin forerunner and has not been identified in previous studies. The contribution of this signal dominates the plasmon transport at large distances. In addition, even though this signal is spread in the propagation direction and has the lateral dimension larger than the wavelength, the field profile close to the chain axis does not change with distance, indicating that this part of the signal is confined to the array.

  19. Nuclear resonant scattering measurements on (57)Fe by multichannel scaling with a 64-pixel silicon avalanche photodiode linear-array detector.

    Science.gov (United States)

    Kishimoto, S; Mitsui, T; Haruki, R; Yoda, Y; Taniguchi, T; Shimazaki, S; Ikeno, M; Saito, M; Tanaka, M

    2014-11-01

    We developed a silicon avalanche photodiode (Si-APD) linear-array detector for use in nuclear resonant scattering experiments using synchrotron X-rays. The Si-APD linear array consists of 64 pixels (pixel size: 100 × 200 μm(2)) with a pixel pitch of 150 μm and depletion depth of 10 μm. An ultrafast frontend circuit allows the X-ray detector to obtain a high output rate of >10(7) cps per pixel. High-performance integrated circuits achieve multichannel scaling over 1024 continuous time bins with a 1 ns resolution for each pixel without dead time. The multichannel scaling method enabled us to record a time spectrum of the 14.4 keV nuclear radiation at each pixel with a time resolution of 1.4 ns (FWHM). This method was successfully applied to nuclear forward scattering and nuclear small-angle scattering on (57)Fe.

  20. Characterization of commercial MOSFET detectors and their feasibility for in-vivo HDR brachytherapy.

    Science.gov (United States)

    Phurailatpam, Reena; Upreti, Rituraj; Nojin Paul, Siji; Jamema, Swamidas V; Deshpande, Deepak D

    2016-01-01

    The present study was to investigate the use of MOSFET as an vivo dosimeter for the application of Ir-192 HDR brachytherapy treatments. MOSFET was characterized for dose linearity in the range of 50-1000 cGy, depth dose dependence from 2 to 7 cm, angular dependence. Signal fading was checked for two weeks. Dose linearity was found to be within 2% in the dose range (50-1000 cGy). The response varied within 8.07% for detector-source distance of 2-7 cm. The response of MOSFET with the epoxy side facing the source (0 degree) is the highest and the lowest response was observed at 90 and 270 degrees. Signal was stable during the study period. The detector showed high dose linearity and insignificant fading. But due to angular and depth dependence, care should be taken and corrections must be applied for clinical dosimetry. Copyright © 2015 Associazione Italiana di Fisica Medica. Published by Elsevier Ltd. All rights reserved.

  1. Comparison of results from simple expressions for MOSFET parameter extraction

    Science.gov (United States)

    Buehler, M. G.; Lin, Y.-S.

    1988-01-01

    In this paper results are compared from a parameter extraction procedure applied to the linear, saturation, and subthreshold regions for enhancement-mode MOSFETs fabricated in a 3-micron CMOS process. The results indicate that the extracted parameters differ significantly depending on the extraction algorithm and the distribution of I-V data points. It was observed that KP values vary by 30 percent, VT values differ by 50 mV, and Delta L values differ by 1 micron. Thus for acceptance of wafers from foundries and for modeling purposes, the extraction method and data point distribution must be specified. In this paper measurement and extraction procedures that will allow a consistent evaluation of measured parameters are discussed.

  2. Effect of the plasma production rate on the implosion dynamics of cylindrical wire/fiber arrays with a profiled linear mass

    International Nuclear Information System (INIS)

    Aleksandrov, V. V.; Mitrofanov, K. N.; Gritsuk, A. N.; Frolov, I. N.; Grabovski, E. V.; Laukhin, Ya. N.

    2013-01-01

    Results are presented from experimental studies on the implosion of arrays made of wires and metalized fibers under the action of current pulses with an amplitude of up to 3.5 MA at the Angara-5-1 facility. The effect of the parameters of an additional linear mass of bismuth and gold deposited on the wires/fibers is investigated. It is examined how the material of the wires/fibers and the metal coating deposited on them affect the penetration of the plasma with the frozen-in magnetic field into a cylindrical array. Information on the plasma production rate for different metals is obtained by analyzing optical streak images of imploding arrays. The plasma production rate m-dot m for cylindrical arrays made of the kapron fibers coated with bismuth is determined. For the initial array radius of R 0 = 1 cm and discharge current of I = 1 MA, the plasma production rate is found to be m-dot m approx. 0.095 ± 0.015 μg/(cm 2 ns)

  3. Low Power and High Sensitivity MOSFET-Based Pressure Sensor

    International Nuclear Information System (INIS)

    Zhang Zhao-Hua; Ren Tian-Ling; Zhang Yan-Hong; Han Rui-Rui; Liu Li-Tian

    2012-01-01

    Based on the metal-oxide-semiconductor field effect transistor (MOSFET) stress sensitive phenomenon, a low power MOSFET pressure sensor is proposed. Compared with the traditional piezoresistive pressure sensor, the present pressure sensor displays high performances on sensitivity and power consumption. The sensitivity of the MOSFET sensor is raised by 87%, meanwhile the power consumption is decreased by 20%. (cross-disciplinary physics and related areas of science and technology)

  4. Structural and Electrical Analysis of Various MOSFET Designs

    OpenAIRE

    Pallavi Choudhary; Tarun Kapoor

    2015-01-01

    Invention of Transistor is the foundation of electronics industry. Metal Oxide Semiconductor Field Effect Transistor (MOSFET) has been the key to the development of nano electronics technology. This paper offers a brief review of some of the most popular MOSFET structure designs. The scaling down of planar bulk MOSFET proposed by the Moore’s Law has been saturated due to short channel effects and DIBL. Due to this alternative approaches has been considered to overcome the problems...

  5. Circuit mismatch influence on performance of paralleling silicon carbide MOSFETs

    DEFF Research Database (Denmark)

    Li, Helong; Munk-Nielsen, Stig; Pham, Cam

    2014-01-01

    This paper focuses on circuit mismatch influence on performance of paralleling SiC MOSFETs. Power circuit mismatch and gate driver mismatch influences are analyzed in detail. Simulation and experiment results show the influence of circuit mismatch and verify the analysis. This paper aims to give...... suggestions on paralleling discrete SiC MOSFETs and designing layout of power modules with paralleled SiC MOSFETs dies....

  6. Technology computer aided design simulation for VLSI MOSFET

    CERN Document Server

    Sarkar, Chandan Kumar

    2013-01-01

    Responding to recent developments and a growing VLSI circuit manufacturing market, Technology Computer Aided Design: Simulation for VLSI MOSFET examines advanced MOSFET processes and devices through TCAD numerical simulations. The book provides a balanced summary of TCAD and MOSFET basic concepts, equations, physics, and new technologies related to TCAD and MOSFET. A firm grasp of these concepts allows for the design of better models, thus streamlining the design process, saving time and money. This book places emphasis on the importance of modeling and simulations of VLSI MOS transistors and

  7. A Discrete Component Low-Noise Preamplifier Readout for a Linear (1x16) SiC Photodiode Array

    Science.gov (United States)

    Kahle, Duncan; Aslam, Shahid; Herrero, Frederico A.; Waczynski, Augustyn

    2016-01-01

    A compact, low-noise and inexpensive preamplifier circuit has been designed and fabricated to optimally readout a common cathode (1x16) channel 4H-SiC Schottky photodiode array for use in ultraviolet experiments. The readout uses an operational amplifier with 10 pF capacitor in the feedback loop in parallel with a low leakage switch for each of the channels. This circuit configuration allows for reiterative sample, integrate and reset. A sampling technique is given to remove Johnson noise, enabling a femtoampere level readout noise performance. Commercial-off-the-shelf acquisition electronics are used to digitize the preamplifier analogue signals. The data logging acquisition electronics has a different integration circuit, which allows the bandwidth and gain to be independently adjusted. Using this readout, photoresponse measurements across the array between spectral wavelengths 200 nm and 370 nm are made to establish the array pixels external quantum efficiency, current responsivity and noise equivalent power.

  8. A discrete component low-noise preamplifier readout for a linear (1×16) SiC photodiode array

    Energy Technology Data Exchange (ETDEWEB)

    Kahle, Duncan [NASA, Goddard Space Flight Center, Detector Systems Branch, Greenbelt, MD 20771 (United States); Aslam, Shahid, E-mail: shahid.aslam-1@nasa.gov [NASA, Goddard Space Flight Center, Planetary Systems Laboratory, Greenbelt, MD 20771 (United States); Herrero, Federico A.; Waczynski, Augustyn [NASA, Goddard Space Flight Center, Detector Systems Branch, Greenbelt, MD 20771 (United States)

    2016-09-11

    A compact, low-noise and inexpensive preamplifier circuit has been designed and fabricated to optimally readout a common cathode (1×16) channel 4H-SiC Schottky photodiode array for use in ultraviolet experiments. The readout uses an operational amplifier with 10 pF capacitor in the feedback loop in parallel with a low leakage switch for each of the channels. This circuit configuration allows for reiterative sample, integrate and reset. A sampling technique is given to remove Johnson noise, enabling a femtoampere level readout noise performance. Commercial-off-the-shelf acquisition electronics are used to digitize the preamplifier analog signals. The data logging acquisition electronics has a different integration circuit, which allows the bandwidth and gain to be independently adjusted. Using this readout, photoresponse measurements across the array between spectral wavelengths 200 nm and 370 nm are made to establish the array pixels external quantum efficiency, current responsivity and noise equivalent power.

  9. Quantum Corrections to the 'Atomistic' MOSFET Simulations

    Science.gov (United States)

    Asenov, Asen; Slavcheva, G.; Kaya, S.; Balasubramaniam, R.

    2000-01-01

    We have introduced in a simple and efficient manner quantum mechanical corrections in our 3D 'atomistic' MOSFET simulator using the density gradient formalism. We have studied in comparison with classical simulations the effect of the quantum mechanical corrections on the simulation of random dopant induced threshold voltage fluctuations, the effect of the single charge trapping on interface states and the effect of the oxide thickness fluctuations in decanano MOSFETs with ultrathin gate oxides. The introduction of quantum corrections enhances the threshold voltage fluctuations but does not affect significantly the amplitude of the random telegraph noise associated with single carrier trapping. The importance of the quantum corrections for proper simulation of oxide thickness fluctuation effects has also been demonstrated.

  10. Modeling transient radiation effects in power MOSFETS

    International Nuclear Information System (INIS)

    Hoffman, J.R.; Hall, W.E.; Dunn, D.E.

    1987-01-01

    Using standard device specifications and simple assumptions, the transient radiation response of VDMOS MOSFETs can be modeled in a standard circuit analysis program. The device model consists of a body diode, a parasitic bipolar transistor, and elements to simulate high-current reduced breakdown. The attached photocurrent model emulates response to any pulse shape and accounts for bias-dependent depletion regions. The model can be optimized to best fit available test data

  11. Evaluation of SEGR threshold in power MOSFETs

    International Nuclear Information System (INIS)

    Allenspach, M.; Brews, J.R.; Mouret, I.; Schrimpf, R.D.; Galloway, K.F.

    1994-01-01

    Bias values, determined experimentally to result in single-event gate rupture (SEGR) in power metal oxide semiconductor field effect transistors (MOSFETs), are used in 2-D device simulations, incorporating the experimental geometry. The simulations indicate that very short time oxide field transients occur for ion strikes when V DS ≠ 0V. These transients can affect SEGR through hole trapping and redistribution in the oxide

  12. Silicon carbide MOSFET integrated circuit technology

    Energy Technology Data Exchange (ETDEWEB)

    Brown, D.M.; Downey, E.; Ghezzo, M.; Kretchmer, J.; Krishnamurthy, V.; Hennessy, W.; Michon, G. [General Electric Co., Schenectady, NY (United States). Corporate Research and Development Center

    1997-07-16

    The research and development activities carried out to demonstrate the status of MOS planar technology for the manufacture of high temperature SiC ICs will be described. These activities resulted in the design, fabrication and demonstration of the World`s first SiC analog IC - a monolithic MOSFET operational amplifier. Research tasks required for the development of a planar SiC MOSFET IC technology included characterization of the SiC/SiO{sub 2} interface using thermally grown oxides: high temperature (350 C) reliability studies of thermally grown oxides: ion implantation studies of donor (N) and acceptor (B) dopants to form junction diodes: epitaxial layer characterization: N channel inversion and depletion mode MOSFETs; device isolation methods and finally integrated circuit design, fabrication and testing of the World`s first monolithic SiC operational amplifier IC. These studies defined a SiC n-channel depletion mode MOSFET IC technology and outlined tasks required to improve all types of SiC devices. For instance, high temperature circuit drift instabilities at 350 C were discovered and characterized. This type of instability needs to be understood and resolved because it affects the high temperature reliability of other types of SiC devices. Improvements in SiC wafer surface quality and the use of deposited oxides instead of thermally grown SiO{sub 2} gate dielectrics will probably be required for enhanced reliability. The slow reverse recovery time exhibited by n{sup +}-p diodes formed by N ion implantation is a problem that needs to be resolved for all types of planar bipolar devices. The reproducibility of acceptor implants needs to be improved before CMOS ICs and many types of power device structures will be manufacturable. (orig.) 51 refs.

  13. DC Characterization of Different Advanced MOSFET Architectures

    International Nuclear Information System (INIS)

    Jomaah, J.; Fadlallah, M.; Ghibaudo, G.

    2011-01-01

    A review of recent results concerning the DC characterization of FD- and Double Gate SOI MOSFET's and FinFETs in modern CMOS technologies is given. By proper extraction techniques, distinction between the different interaction mechanisms is done. Parameter extraction conducted at room and low temperature clearly indicates that the mobility is directly impacted by shrinking the gate length in sub 100nm architectures. (author)

  14. MOSFET detectors in quality assurance of tomotherapy treatments.

    Science.gov (United States)

    Cherpak, Amanda; Studinski, Ryan C N; Cygler, Joanna E

    2008-02-01

    The purpose of this work was to characterize metal oxide semiconductor field-effect transistors (MOSFETs) in a 6 MV conventional linac and investigate their use for quality assurance of radiotherapy treatments with a tomotherapy Hi-Art unit. High sensitivity and standard sensitivity MOSFETs were first calibrated and then tested for reproducibility, field size dependence, and accuracy of measuring surface dose in a 6 MV beam as well as in a tomotherapy Hi-Art unit. In vivo measurements were performed on both a RANDO phantom and several head and neck cancer patients treated with tomotherapy and compared to TLD measurements and treatment plan doses to evaluate the performance of MOSFETs in a high gradient radiation field. The average calibration factor found was 0.345+/-2.5%cGy/mV for the high sensitivity MOSFETs tested and 0.901+/-2.4%cGy/mV for the standard sensitivity MOSFETs. MOSFET measured surface doses had an average agreement with ion chamber measurements of 1.55% for the high sensitivity MOSFET and 5.23% for the standard sensitivity MOSFET when averaged over all trials and field sizes tested. No significant dependence on field size was found for the standard sensitivity MOSFETs, however a maximum difference of 5.34% was found for the high sensitivity MOSFET calibration factors in the field sizes tested. Measurements made with MOSFETS on head and neck patients treated on a tomotherapy Hi-Art unit had an average agreement of (3.26+/-0.03)% with TLD measurements, however the average of the absolute difference between the MOSFET measurements and the treatment plan skin doses was (12.2+/-7.5)%. The MOSFET measured patient skin doses also had good reproducibility, with inter-fraction deviations ranging from 1.4% to 6.6%. Similar results were found from trials using a RANDO phantom. The MOSFETs performed well when used in the tomotherapy Hi-Art unit and did not increase the overall treatment set-up time when used for patient measurements. It was found that MOSFETs

  15. A modified electronic load based on cascode linear MOSFET configuration

    DEFF Research Database (Denmark)

    Farhang, Peyman; Mátéfi-Tempfli, Stefan

    2017-01-01

    Although switched-mode Electronic Loads (E-Loads) are commonly used in different applications, they are facing particular limitations especially for higher frequency purposes. While increasing the switching frequency in switched-mode E-Loads enables them to operate at high frequencies, simply ris...

  16. Novel power MOSFET-based expander for high frequency ultrasound systems.

    Science.gov (United States)

    Choi, Hojong; Shung, K Kirk

    2014-01-01

    The function of an expander is to obstruct the noise signal transmitted by the pulser so that it does not pass into the transducer or receive electronics, where it can produce undesirable ring-down in an ultrasound imaging application. The most common type is a diode-based expander, which is essentially a simple diode-pair, is widely used in pulse-echo measurements and imaging applications because of its simple architecture. However, diode-based expanders may degrade the performance of ultrasonic transducers and electronic components on the receiving and transmitting sides of the ultrasound systems, respectively. Since they are non-linear devices, they cause excessive signal attenuation and noise at higher frequencies and voltages. In this paper, a new type of expander that utilizes power MOSFET components, which we call a power MOSFET-based expander, is introduced and evaluated for use in high frequency ultrasound imaging systems. The performance of a power MOSFET-based expander was evaluated relative to a diode-based expander by comparing the noise figure (NF), insertion loss (IL), total harmonic distortion (THD), response time (RT), electrical impedance (EI) and dynamic power consumption (DPC). The results showed that the power MOSFET-based expander provided better NF (0.76 dB), IL (-0.3 dB) and THD (-62.9 dB), and faster RT (82 ns) than did the diode-based expander (NF (2.6 dB), IL (-1.4 dB), THD (-56.0 dB) and RT (119 ns)) at 70 MHz. The -6 dB bandwidth and the peak-to-peak voltage of the echo signal received by the transducer using the power MOSFET-based expander improved by 17.4% and 240% compared to the diode-based expander, respectively. The new power MOSFET-based expander was shown to yield lower NF, IL and THD, faster RT and lower ring down than the diode-based expander at the expense of higher dynamic power consumption. Copyright © 2013 Elsevier B.V. All rights reserved.

  17. Measurement and comparison of skin dose using OneDose MOSFET and Mobile MOSFET for patients with acute lymphoblastic leukemia.

    Science.gov (United States)

    Mattar, Essam H; Hammad, Lina F; Al-Mohammed, Huda I

    2011-07-01

    Total body irradiation is a protocol used to treat acute lymphoblastic leukemia in patients prior to bone marrow transplant. It is involved in the treatment of the whole body using a large radiation field with extended source-skin distance. Therefore measuring and monitoring the skin dose during the treatment is important. Two kinds of metal oxide semiconductor field effect transistor (OneDose MOSFET and mobile MOSEFT) dosimeter are used during the treatment delivery to measure the skin dose to specific points and compare it with the target prescribed dose. The objective of this study was to compare the variation of skin dose in patients with acute lymphatic leukemia (ALL) treated with total body irradiation (TBI) using OneDose MOSFET detectors and Mobile MOSFET, and then compare both results with the target prescribed dose. The measurements involved 32 patient's (16 males, 16 females), aged between 14-30 years, with an average age of 22.41 years. One-Dose MOSFET and Mobile MOSFET dosimetry were performed at 10 different anatomical sites on every patient. The results showed there was no variation between skin dose measured with OneDose MOSFET and Mobile MOSFET in all patients. Furthermore, the results showed for every anatomical site selected there was no significant difference in the dose delivered using either OneDose MOSFET detector or Mobile MOSFET as compared to the prescribed dose. The study concludes that One-Dose MOSFET detectors and Mobile MOSFET both give a direct read-out immediately after the treatment; therefore both detectors are suitable options when measuring skin dose for total body irradiation treatment.

  18. Detail study of SiC MOSFET switching characteristics

    DEFF Research Database (Denmark)

    Li, Helong; Munk-Nielsen, Stig

    2014-01-01

    This paper makes detail study of the latest SiC MOSFETs switching characteristics in relation to gate driver maximum current, gate resistance, common source inductance and parasitic switching loop inductance. The switching performance of SiC MOSFETs in terms of turn on and turn off voltage...

  19. Challenges in Switching SiC MOSFET without Ringing

    DEFF Research Database (Denmark)

    Li, Helong; Munk-Nielsen, Stig

    2014-01-01

    Switching SiC MOSFET without ringing in high frequency applications is important for meeting the EMI (ElectroMagnetic Interference) standard. Achieving a clean switching waveform of SiC MOSFET without additional components is becoming a challenge. In this paper, the switching oscillation mechanis...

  20. Measurement of MOSFET LF Noise Under Large Signal RF Excitation

    NARCIS (Netherlands)

    van der Wel, A.P.; Klumperink, Eric A.M.; Nauta, Bram

    A new measurement technique is presented that allows measurement of MOSFET LF noise under large signal RF excitation. Measurements indicate that MOSFETS exhibit a reduction in LF noise when they are cycled from inversion to accummulation and that this reduction does not depend on the frequency of

  1. Insertion of linear 8.4 μm diameter 16 channel carbon fiber electrode arrays for single unit recordings

    Science.gov (United States)

    Patel, Paras R.; Na, Kyounghwan; Zhang, Huanan; Kozai, Takashi D. Y.; Kotov, Nicholas A.; Yoon, Euisik; Chestek, Cynthia A.

    2016-01-01

    Objective Single carbon fiber electrodes (d=8.4 μm) insulated with parylene-c and functionalized with PEDOT:pTS have been shown to record single unit activity but manual implantation of these devices with forceps can be difficult. Without an improvement in the insertion method any increase in the channel count by fabricating carbon fiber arrays would be impractical. In this study, we utilize a water soluble coating and structural backbones that allow us to create, implant, and record from fully functionalized arrays of carbon fibers with ~150 μm pitch. Approach Two approaches were tested for the insertion of carbon fiber arrays. The first method used a PEG coating that temporarily stiffened the fibers while leaving a small portion at the tip exposed. The small exposed portion (500 μm – 1 mm) readily penetrated the brain allowing for an insertion that did not require the handling of each fiber by forceps. The second method involved the fabrication of silicon support structures with individual shanks spaced 150 μm apart. Each shank consisted of a small groove that held an individual carbon fiber. Main results Our results showed that the PEG coating allowed for the chronic implantation of carbon fiber arrays in 5 rats with unit activity detected at 31 days post-implant. The silicon support structures recorded single unit activity in 3 acute rat surgeries. In one of those surgeries a stacked device with 3 layers of silicon support structures and carbon fibers was built and shown to readily insert into the brain with unit activity on select sites. Significance From these studies we have found that carbon fibers spaced at ~150 μm readily insert into the brain. This greatly increases the recording density of chronic neural probes and paves the way for even higher density devices that have a minimal scarring response. PMID:26035638

  2. Fully Integrated Linear Single Photon Avalanche Diode (SPAD) Array with Parallel Readout Circuit in a Standard 180 nm CMOS Process

    Science.gov (United States)

    Isaak, S.; Bull, S.; Pitter, M. C.; Harrison, Ian.

    2011-05-01

    This paper reports on the development of a SPAD device and its subsequent use in an actively quenched single photon counting imaging system, and was fabricated in a UMC 0.18 μm CMOS process. A low-doped p- guard ring (t-well layer) encircling the active area to prevent the premature reverse breakdown. The array is a 16×1 parallel output SPAD array, which comprises of an active quenched SPAD circuit in each pixel with the current value being set by an external resistor RRef = 300 kΩ. The SPAD I-V response, ID was found to slowly increase until VBD was reached at excess bias voltage, Ve = 11.03 V, and then rapidly increase due to avalanche multiplication. Digital circuitry to control the SPAD array and perform the necessary data processing was designed in VHDL and implemented on a FPGA chip. At room temperature, the dark count was found to be approximately 13 KHz for most of the 16 SPAD pixels and the dead time was estimated to be 40 ns.

  3. Parallel Connection of Silicon Carbide MOSFETs for Multichip Power Modules

    DEFF Research Database (Denmark)

    Li, Helong

    challenges from the manufacture and application points of view. The less mature manufacture process limits the yield and the single die size of the SiC MOSFETs, which results a smaller current capability of a single SiC MOSFET die. Consequently, in high current application, the paralleled connections of Si...... connections for the paralleled dies are presented and the source of the transient current imbalance is concluded. To mitigate the transient current imbalance in the traditional DBC layout, a novel DBC layout with split output is proposed. First, the working mechanism of the split output topology is studied...... the current sharing performance among the paralleled SiC MOSFET dies in the power module. The proposed DBC layout is not only limited for SiC MOSFETs, but also for Si IGBTs and other voltage controlled devices. of the circuit mismatch on the paralleled connection of SiC MOSFETs. It reveals the circuit...

  4. Application of MOSFET radiation detector for patient dosimetry

    International Nuclear Information System (INIS)

    Soubra, M.; Cygler, J.; Szanto, J.

    1996-01-01

    Purpose: A new direct reading Metal Oxide-Silicon Field Effect Transistor (MOSFET) based radiation detector system has been investigated in a variety of clinical radiotherapy procedures. The aim of this study is to report on the clinical applicability of such a device, its ease of use and on its dosimetric properties that include precision angular and energy dependence. Comparisons of patient dose measurements obtained by the MOSFET based system and the commonly used thermoluminescence dosimeters (TLD) and diodes are discussed. Material and Methods: A commercially available MOSFET dosimetry system that employs dual MOSFET dual bias arrangements has been used in this study. The detector is bonded with the epoxy to the end of a long (1.5 m) flexible cable whose other end is connected to a bias supply box operated by a battery. The bias box can accommodate up to 5 MOSFETs and after radiation exposure the dose can be determined by connecting the detectors to a pre calibrated reader. For the clinical evaluation 5 MOSFETs were used on patients undergoing total body irradiation (TBI) and high dose rate brachytherapy (HDR). The MOSFET detectors were taped to patient surface adjacent to the routinely used TLDs and/or diodes. To examine energy dependence the MOSFET sensitivity (mV/Gy) was determined in relation to a calibrated dose from 6 and 18 MV photon beams. The directional dependence was investigated by placing a MOSFET during irradiation in a special polystyrene insert that can be manually rotated to the required angle. Precision (reproducibility) measurements were made by exposing MOSFETs to multiple fractions of dose in the range of 3 x 10 -2 to 2 Gy. Results: In 3 of TBI trials the diodes measured average dose was within 1.0% of the prescribed dose compared to 3.7% for TLDs and 1.8% for MOSFETs. The MOSFETs average sensitivity for 6 MV was within 2% of the 18 MV photon beam. The reproducibility of MOSFET response was better than 3 % provided the dose per fraction is

  5. Single-event burnout hardening of planar power MOSFET with partially widened trench source

    Science.gov (United States)

    Lu, Jiang; Liu, Hainan; Cai, Xiaowu; Luo, Jiajun; Li, Bo; Li, Binhong; Wang, Lixin; Han, Zhengsheng

    2018-03-01

    We present a single-event burnout (SEB) hardened planar power MOSFET with partially widened trench sources by three-dimensional (3D) numerical simulation. The advantage of the proposed structure is that the work of the parasitic bipolar transistor inherited in the power MOSFET is suppressed effectively due to the elimination of the most sensitive region (P-well region below the N+ source). The simulation result shows that the proposed structure can enhance the SEB survivability significantly. The critical value of linear energy transfer (LET), which indicates the maximum deposited energy on the device without SEB behavior, increases from 0.06 to 0.7 pC/μm. The SEB threshold voltage increases to 120 V, which is 80% of the rated breakdown voltage. Meanwhile, the main parameter characteristics of the proposed structure remain similar with those of the conventional planar structure. Therefore, this structure offers a potential optimization path to planar power MOSFET with high SEB survivability for space and atmospheric applications. Project supported by the National Natural Science Foundation of China (Nos. 61404161, 61404068, 61404169).

  6. Modelling of parameters for asymmetric halo and symmetric DHDMG n-MOSFETs

    Science.gov (United States)

    De, Swapnadip; Sarkar, Angsuman; Sarkar, Chandan Kumar

    2011-10-01

    This article presents an analytical surface potential, threshold voltage and drain current model for asymmetric pocket-implanted, single-halo dual material gate and double-halo dual material gate (DHDMG) n-MOSFET (MOSFET, metal-oxide-semiconductor field-effect transistor) operating up to 40 nm regime. The model is derived by applying Gauss's law to a rectangular box, covering the entire depletion region. The asymmetric pocket-implanted model takes into account the effective doping concentration of the two linear pocket profiles at the source and the drain ends along with the inner fringing capacitances at both the source and the drain ends and the subthreshold drain and the substrate bias effect. Using the surface potential model, the threshold voltage and drain currents are estimated. The same model is used to find the characteristic parameters for dual-material gate (DMG) with halo implantations and double gate. The characteristic improvement is investigated. It is concluded that the DHDMG device structure exhibits better suppression of the short-channel effect (SCE) and the threshold voltage roll-off than DMG and double-gate MOSFET. The adequacy of the model is verified by comparing with two-dimensional device simulator DESSIS. A very good agreement of our model with DESSIS is obtained proving the validity of our model used in suppressing the SCEs.

  7. A Design Of Feeding Network For A Dual-Linear Polarization, Stacked, Probe-Fed Microstrip Patch Antenna Array

    DEFF Research Database (Denmark)

    Jaworski, G.; Krozer, Viktor

    2004-01-01

    Components of multilayer feed network are presented for application in broad-band dual-linear polarized stacked C-band antenna. Measurement results of wide band matching circuits and different types of power divider networks constituting parts of BFN demonstrate wideband operation. Suitable...

  8. DIRECT TUNNELLING AND MOSFET BORDER TRAPS

    Directory of Open Access Journals (Sweden)

    Vladimir Drach

    2015-09-01

    Full Text Available The border traps, in particular slow border traps, are being investigated in metal-oxide-semiconductor structures, utilizing n-channel MOSFET as a test sample. The industrial process technology of test samples manufacturing is described. The automated experimental setup is discussed, the implementation of the experimental setup had made it possible to complete the entire set of measurements. The schematic diagram of automated experimental setup is shown. The charging time characteristic of the ID-VG shift reveals that the charging process is a direct tunnelling process and highly bias dependent.

  9. Technology challenges for ultrasmall silicon MOSFET's

    International Nuclear Information System (INIS)

    Dennard, R.H.

    1981-01-01

    Work on silicon MOSFET devices scaled down to half-micron dimensions is gathering momentum in research labs for VLSI applications. Further reductions in device geometries by only a factor of two will bring us to the edge of some fundamental barriers to miniaturization. Design requirements for very thin layers in the device structure lead to resistance effects, statistical fluctuation of doping impurities, and increased concern for interface properties. Scaling down of applied voltage is difficult because built-in junction potentials and other small voltage terms are no longer negligible. Increased susceptibility to spurious operation or permanent damage from alpha particles, cosmic particles, or other high-energy radiation is reviewed

  10. Practical applications of SiC-MOSFETs and further developments

    Science.gov (United States)

    Furuhashi, Masayuki; Tomohisa, Shingo; Kuroiwa, Takeharu; Yamakawa, Satoshi

    2016-03-01

    The next generation power modules using SiC-MOSFETs have been developed for over ten years. From our successful results, we have released SiC power modules which have been used in railway vehicles, industrial machines and home appliances, etc. Low on-resistance 3.3 kV SiC-MOSFETs have been realized by JFET doping and they demonstrated a loss reduction of 55% in a traction inverter compared to a conventional system. In the case of a 1.2 kV MOSFET, a 1 cm2 die verified that it can control a large current of over 600 A. For home appliances, we reduce the trade-off between the threshold voltage and channel mobility by a new gate oxide process. High threshold voltage SiC-MOSFETs having a low on-resistance contribute to the low cost installation of SiC-MOSFETs into air conditioners and achieved a loss reduction of 45% in DC converters. For further reduction of conduction loss, we investigated new structures and technologies. Trench SiC-MOSFETs having a bottom p-well verify lower on-resistance and a larger SCSOA than those of planar MOSFETs. The optimization of the dopant concentration in the drift layer and a reduction of wafer thickness verified the reduction of on-resistance. They are expected to contribute to a lower power loss.

  11. Practical applications of SiC-MOSFETs and further developments

    International Nuclear Information System (INIS)

    Furuhashi, Masayuki; Tomohisa, Shingo; Kuroiwa, Takeharu; Yamakawa, Satoshi

    2016-01-01

    The next generation power modules using SiC-MOSFETs have been developed for over ten years. From our successful results, we have released SiC power modules which have been used in railway vehicles, industrial machines and home appliances, etc. Low on-resistance 3.3 kV SiC-MOSFETs have been realized by JFET doping and they demonstrated a loss reduction of 55% in a traction inverter compared to a conventional system. In the case of a 1.2 kV MOSFET, a 1 cm 2 die verified that it can control a large current of over 600 A. For home appliances, we reduce the trade-off between the threshold voltage and channel mobility by a new gate oxide process. High threshold voltage SiC-MOSFETs having a low on-resistance contribute to the low cost installation of SiC-MOSFETs into air conditioners and achieved a loss reduction of 45% in DC converters. For further reduction of conduction loss, we investigated new structures and technologies. Trench SiC-MOSFETs having a bottom p-well verify lower on-resistance and a larger SCSOA than those of planar MOSFETs. The optimization of the dopant concentration in the drift layer and a reduction of wafer thickness verified the reduction of on-resistance. They are expected to contribute to a lower power loss. (paper)

  12. TH-CD-207B-05: Measurement of CT Bow-Tie Profiles Using a Linear Array Detector

    Energy Technology Data Exchange (ETDEWEB)

    Yang, K; Li, X; Liu, B [Massachusetts General Hospital, Boston, MA (United States)

    2016-06-15

    Purpose: To accurately measure CT bow-tie profiles from various manufacturers and to provide non-proprietary information for CT system modeling. Methods: A GOS-based linear detector (0.8 mm per pixel and 51.2 cm in length) with a fast data sampling speed (0.24 ms/sample) was used to measure the relative profiles of bow-tie filters from a collection of eight CT scanners by three different vendors, GE (LS Xtra, LS VCT, Discovery HD750), Siemens (Sensation 64, Edge, Flash, Force), and Philips (iBrilliance 256). The linear detector was first calibrated for its energy response within typical CT beam quality ranges and compared with an ion chamber and analytical modeling (SPECTRA and TASMIP). A geometrical calibration process was developed to determine key parameters including the distance from the focal spot to the linear detector, the angular increment of the gantry at each data sampling, the location of the central x-ray on the linear detector, and the angular response of the detector pixel. Measurements were performed under axial-scan modes for most representative bow-tie filters and kV selections from each scanner. Bow-tie profiles were determined by re-binning the measured rotational data with an angular accuracy of 0.1 degree using the calibrated geometrical parameters. Results: The linear detector demonstrated an energy response as a solid state detector, which is close to the CT imaging detector. The geometrical calibration was proven to be sufficiently accurate (< 1mm in error for distances >550 mm) and the bow-tie profiles measured from rotational mode matched closely to those from the gantry-stationary mode. Accurate profiles were determined for a total of 21 bow-tie filters and 83 filter/kV combinations from the abovementioned scanner models. Conclusion: A new improved approach of CT bow-tie measurement was proposed and accurate bow-tie profiles were provided for a broad list of CT scanner models.

  13. An oxide filled extended trench gate super junction MOSFET structure

    International Nuclear Information System (INIS)

    Cai-Lin, Wang; Jun, Sun

    2009-01-01

    This paper proposes an oxide filled extended trench gate super junction (SJ) MOSFET structure to meet the need of higher frequency power switches application. Compared with the conventional trench gate SJ MOSFET, new structure has the smaller input and output capacitances, and the remarkable improvements in the breakdown voltage, on-resistance and switching speed. Furthermore, the SJ in the new structure can be realized by the existing trench etching and shallow angle implantation, which offers more freedom to SJ MOSFET device design and fabrication. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  14. Non-destructive visualization of linear explosive-induced Pyroshock using phase arrayed laser-induced shock in a space launcher composite

    International Nuclear Information System (INIS)

    Jang, Jae Kyeong; Lee, Jung Ryul

    2015-01-01

    Separation mechanism of Space launch vehicles are used in various separation systems and pyrotechnic devices. The operation of these pyrotechnic devices generates Pyroshock that can cause failures in electronic components. The prediction of high frequency structural response, especially the shock response spectrum (SRS), is important. This paper presents a non-destructive visualization and simulation of linear explosive-induced Pyroshock using phase arrayed Laser-induced shock. The proposed method includes a laser shock test based on laser beam and filtering zone conditioning to predict the SRS of Pyroshock. A ballistic test based on linear explosive and non-contact Laser Doppler Vibrometers and a nondestructive Laser shock measurement using laser excitation and several PZT sensors, are performed using a carbon composite sandwich panel. The similarity of the SRS of the conditioned laser shock to that of the real explosive Pyroshock is evaluated with the Mean Acceleration Difference. The average of MADs over the two training points was 33.64%. And, MAD at verification point was improved to 31.99%. After that, experimentally found optimal conditions are applied to any arbitrary points in laser scanning area. Finally, it is shown that linear explosive-induced real Pyroshock wave propagation can be visualized with high similarity based on the proposed laser technology. (paper)

  15. Interpreting Space-Mission LET Requirements for SEGR in Power MOSFETs

    Science.gov (United States)

    Lauenstein, J. M.; Ladbury, R. L.; Batchelor, D. A.; Goldsman, N.; Kim, H. S.; Phan, A. M.

    2010-01-01

    A Technology Computer Aided Design (TCAD) simulation-based method is developed to evaluate whether derating of high-energy heavy-ion accelerator test data bounds the risk for single-event gate rupture (SEGR) from much higher energy on-orbit ions for a mission linear energy transfer (LET) requirement. It is shown that a typical derating factor of 0.75 applied to a single-event effect (SEE) response curve defined by high-energy accelerator SEGR test data provides reasonable on-orbit hardness assurance, although in a high-voltage power MOSFET, it did not bound the risk of failure.

  16. Detailed characterisation of Si Gate-All-Around Nanowire MOSFETs at cryogenic temperatures

    Science.gov (United States)

    Boudier, D.; Cretu, B.; Simoen, E.; Veloso, A.; Collaert, N.

    2018-05-01

    In this work, Gate-All-Around Nanowire MOSFETs have been studied at very low temperatures. DC behaviors have been investigated in the linear operation and saturation regions, giving access to several analog parameters. Static characteristics at 4.2 K and low polarization exhibit step- like variations of the drain current, which can be linked to energy subband scattering. First results on the impact of quantum transport mechanism on the low frequency noise are shown. Finally the low frequency noise spectroscopy has led to the identification of silicon film traps.

  17. Attenuated total internal reflection infrared microspectroscopic imaging using a large-radius germanium internal reflection element and a linear array detector.

    Science.gov (United States)

    Patterson, Brian M; Havrilla, George J

    2006-11-01

    The number of techniques and instruments available for Fourier transform infrared (FT-IR) microspectroscopic imaging has grown significantly over the past few years. Attenuated total internal reflectance (ATR) FT-IR microspectroscopy reduces sample preparation time and has simplified the analysis of many difficult samples. FT-IR imaging has become a powerful analytical tool using either a focal plane array or a linear array detector, especially when coupled with a chemometric analysis package. The field of view of the ATR-IR microspectroscopic imaging area can be greatly increased from 300 x 300 microm to 2500 x 2500 microm using a larger internal reflection element of 12.5 mm radius instead of the typical 1.5 mm radius. This gives an area increase of 70x before aberrant effects become too great. Parameters evaluated include the change in penetration depth as a function of beam displacement, measurements of the active area, magnification factor, and change in spatial resolution over the imaging area. Drawbacks such as large file size will also be discussed. This technique has been successfully applied to the FT-IR imaging of polydimethylsiloxane foam cross-sections, latent human fingerprints, and a model inorganic mixture, which demonstrates the usefulness of the method for pharmaceuticals.

  18. Design, production, and testing of field effect transistors. [cryogenic MOSFETS

    Science.gov (United States)

    Sclar, N.

    1982-01-01

    Cryogenic MOSFETS (CRYOFETS), specifically designed for low temperature preamplifier application with infrared extrinsic detectors were produced and comparatively tested with p-channel MOSFETs under matched conditions. The CRYOFETs exhibit lower voltage thresholds, high source-follower gains at lower bias voltage, and lower dc offset source voltage. The noise of the CRYOFET is found to be 2 to 4 times greater than the MOSFET with a correspondingly lower figure of merit (which is established for source-follower amplifiers). The device power dissipation at a gain of 0.98 is some two orders of magnitude lower than for the MOSFET. Further, CRYOFETs are free of low temperature I vs V character hysteresis and balky conduction turn-on effects and operate effectively in the 2.4 to 20 K range. These devices have promise for use on long term duration sensor missions and for on-focal-plane signal processing at low temperatures.

  19. Performance analysis of SOI MOSFET with rectangular recessed channel

    Science.gov (United States)

    Singh, M.; Mishra, S.; Mohanty, S. S.; Mishra, G. P.

    2016-03-01

    In this paper a two dimensional (2D) rectangular recessed channel-silicon on insulator metal oxide semiconductor field effect transistor (RRC-SOI MOSFET), using the concept of groove between source and drain regions, which is one of the channel engineering technique to suppress the short channel effect (SCE). This suppression is mainly due to corner potential barrier of the groove and the simulation is carried out by using ATLAS 2D device simulator. To have further improvement of SCE in RRC-SOI MOSFET, three more devices are designed by using dual material gate (DMG) and gate dielectric technique, which results in formation of devices i.e. DMRRC-SOI,MLSMRRC-SOI, MLDMRRC-SOI MOSFET. The effect of different structures of RRC-SOI on AC and RF parameters are investigated and the importance of these devices over RRC MOSFET regarding short channel effect is analyzed.

  20. Performance analysis of SOI MOSFET with rectangular recessed channel

    International Nuclear Information System (INIS)

    Singh, M; Mishra, G P; Mishra, S; Mohanty, S S

    2016-01-01

    In this paper a two dimensional (2D) rectangular recessed channel–silicon on insulator metal oxide semiconductor field effect transistor (RRC-SOI MOSFET), using the concept of groove between source and drain regions, which is one of the channel engineering technique to suppress the short channel effect (SCE). This suppression is mainly due to corner potential barrier of the groove and the simulation is carried out by using ATLAS 2D device simulator. To have further improvement of SCE in RRC-SOI MOSFET, three more devices are designed by using dual material gate (DMG) and gate dielectric technique, which results in formation of devices i.e. DMRRC-SOI,MLSMRRC-SOI, MLDMRRC-SOI MOSFET. The effect of different structures of RRC-SOI on AC and RF parameters are investigated and the importance of these devices over RRC MOSFET regarding short channel effect is analyzed. (paper)

  1. A novel charge pump drive circuit for power MOSFETs

    International Nuclear Information System (INIS)

    Wang Songlin; Zhou Bo; Wang Hui; Guo Wangrui; Ye Qiang

    2010-01-01

    Novel improved power metal oxide semiconductor field effect transistor (MOSFET) drive circuits are introduced. An anti-deadlock block is used in the P-channel power MOSFET drive circuit to avoid deadlocks and improve the transient response. An additional charging path is added to the N-channel power MOSFET drive circuit to enhance its drive capability and improve the transient response. The entire circuit is designed in a 0.6 μm BCD process and simulated with Cadence Spectre. Compared with traditional power MOSFET drive circuits, the simulation results show that improved P-channel power MOSFET drive circuit makes the rise time reduced from 60 to 14 ns, the fall time reduced from 240 to 30 ns, and its power dissipation reduced from 2 to 1 mW, while the improved N-channel power MOSFET drive circuit makes the rise time reduced from 360 to 27 ns and its power dissipation reduced from 1.1 to 0.8 mW. (semiconductor integrated circuits)

  2. Response Variability in Commercial MOSFET SEE Qualification

    International Nuclear Information System (INIS)

    George, J. S.; Clymer, D. A.; Turflinger, T. L.; Mason, L. W.; Stone, S.

    2016-01-01

    Single-event effects (SEE) evaluation of five different part types of next generation, commercial trench MOSFETs indicates large part-to-part variation in determining a safe operating area (SOA) for drain-source voltage (V_D_S) following a test campaign that exposed >50 samples per part type to heavy ions. These results suggest a determination of a SOA using small sample sizes may fail to capture the full extent of the part-to-part variability. An example method is discussed for establishing a Safe Operating Area using a one-sided statistical tolerance limit based on the number of test samples. Finally, burn-in is shown to be a critical factor in reducing part-to-part variation in part response. Implications for radiation qualification requirements are also explored.

  3. Solid phase microextraction of diclofenac using molecularly imprinted polymer sorbent in hollow fiber combined with fiber optic-linear array spectrophotometry.

    Science.gov (United States)

    Pebdani, Arezou Amiri; Shabani, Ali Mohammad Haji; Dadfarnia, Shayessteh; Khodadoust, Saeid

    2015-08-05

    A simple solid phase microextraction method based on molecularly imprinted polymer sorbent in the hollow fiber (MIP-HF-SPME) combined with fiber optic-linear array spectrophotometer has been applied for the extraction and determination of diclofenac in environmental and biological samples. The effects of different parameters such as pH, times of extraction, type and volume of the organic solvent, stirring rate and donor phase volume on the extraction efficiency of the diclofenac were investigated and optimized. Under the optimal conditions, the calibration graph was linear (r(2)=0.998) in the range of 3.0-85.0 μg L(-1) with a detection limit of 0.7 μg L(-1) for preconcentration of 25.0 mL of the sample and the relative standard deviation (n=6) less than 5%. This method was applied successfully for the extraction and determination of diclofenac in different matrices (water, urine and plasma) and accuracy was examined through the recovery experiments. Copyright © 2015 Elsevier B.V. All rights reserved.

  4. Solid phase microextraction of diclofenac using molecularly imprinted polymer sorbent in hollow fiber combined with fiber optic-linear array spectrophotometry

    Science.gov (United States)

    Pebdani, Arezou Amiri; Shabani, Ali Mohammad Haji; Dadfarnia, Shayessteh; Khodadoust, Saeid

    2015-08-01

    A simple solid phase microextraction method based on molecularly imprinted polymer sorbent in the hollow fiber (MIP-HF-SPME) combined with fiber optic-linear array spectrophotometer has been applied for the extraction and determination of diclofenac in environmental and biological samples. The effects of different parameters such as pH, times of extraction, type and volume of the organic solvent, stirring rate and donor phase volume on the extraction efficiency of the diclofenac were investigated and optimized. Under the optimal conditions, the calibration graph was linear (r2 = 0.998) in the range of 3.0-85.0 μg L-1 with a detection limit of 0.7 μg L-1 for preconcentration of 25.0 mL of the sample and the relative standard deviation (n = 6) less than 5%. This method was applied successfully for the extraction and determination of diclofenac in different matrices (water, urine and plasma) and accuracy was examined through the recovery experiments.

  5. Optimization of process parameter variations on leakage current in in silicon-oninsulator vertical double gate mosfet device

    Directory of Open Access Journals (Sweden)

    K.E. Kaharudin

    2015-12-01

    Full Text Available This paper presents a study of optimizing input process parameters on leakage current (IOFF in silicon-on-insulator (SOI Vertical Double-Gate,Metal Oxide Field-Effect-Transistor (MOSFET by using L36 Taguchi method. The performance of SOI Vertical DG-MOSFET device is evaluated in terms of its lowest leakage current (IOFF value. An orthogonal array, main effects, signal-to-noise ratio (SNR and analysis of variance (ANOVA are utilized in order to analyze the effect of input process parameter variation on leakage current (IOFF. Based on the results, the minimum leakage current ((IOFF of SOI Vertical DG-MOSFET is observed to be 0.009 nA/µm or 9 ρA/µm while keeping the drive current (ION value at 434 µA/µm. Both the drive current (ION and leakage current (IOFF values yield a higher ION/IOFF ratio (48.22 x 106 for low power consumption application. Meanwhile, polysilicon doping tilt angle and polysilicon doping energy are recognized as the most dominant factors with each of the contributing factor effects percentage of 59% and 25%.

  6. MOSFET LF noise under Large Signal Excitation: Measurement, Modelling and Application

    NARCIS (Netherlands)

    van der Wel, A.P.

    2005-01-01

    Regarding LF noise in MOSFETs, it is noted that the MOSFET is a surface channel device. Both n and p-channel devices exhibit similar low frequency (LF) noise behaviour that can be explained by a carrier number fluctuation model (section 3.5). LF noise in MOSFETs is predominantly caused by Random

  7. Evaluation of fiber Bragg grating sensor interrogation using InGaAs linear detector arrays and Gaussian approximation on embedded hardware

    Science.gov (United States)

    Kumar, Saurabh; Amrutur, Bharadwaj; Asokan, Sundarrajan

    2018-02-01

    Fiber Bragg Grating (FBG) sensors have become popular for applications related to structural health monitoring, biomedical engineering, and robotics. However, for successful large scale adoption, FBG interrogation systems are as important as sensor characteristics. Apart from accuracy, the required number of FBG sensors per fiber and the distance between the device in which the sensors are used and the interrogation system also influence the selection of the interrogation technique. For several measurement devices developed for applications in biomedical engineering and robotics, only a few sensors per fiber are required and the device is close to the interrogation system. For these applications, interrogation systems based on InGaAs linear detector arrays provide a good choice. However, their resolution is dependent on the algorithms used for curve fitting. In this work, a detailed analysis of the choice of algorithm using the Gaussian approximation for the FBG spectrum and the number of pixels used for curve fitting on the errors is provided. The points where the maximum errors occur have been identified. All comparisons for wavelength shift detection have been made against another interrogation system based on the tunable swept laser. It has been shown that maximum errors occur when the wavelength shift is such that one new pixel is included for curve fitting. It has also been shown that an algorithm with lower computation cost compared to the more popular methods using iterative non-linear least squares estimation can be used without leading to the loss of accuracy. The algorithm has been implemented on embedded hardware, and a speed-up of approximately six times has been observed.

  8. MOSFET Dosimetry for Evaluation of Gonad Shielding during Radiotherapy

    International Nuclear Information System (INIS)

    Kim, Hwi Young; Choi, Yun Seok; Park, So Yeon; Park, Yang Kyun; Ye, Sung Joon

    2011-01-01

    In order to confirm feasibility of MOSFET modality in use of in vivo dosimetry, evaluation of gonad shielding in order to minimize gonadal dose of patients undergoing radiotherapy by using MOSFET modality was performed. Gonadal dose of patients undergoing radiotherapy for rectal cancer in the department of radiation oncology of Seoul National University Hospital since 2009 was measured. 6 MV and 15 MV photon beams emitted from Varian 21EX LINAC were used for radiotherapy. In order to minimize exposed dose caused by the scattered ray not only from collimator of LINAC but also from treatment region inside radiation field, we used box.shaped lead shielding material. The shielding material was made of the lead block and consists of 7.5 cm x 9.5 cm x 5.5 cm sized case and 9 cm x 9.5 cm x 1 cm sized cover. Dosimetry for evaluation of gonad shielding was done with MOSFET modality. By protecting with gonad shielding material, average gonadal dose of patients was decreased by 23.07% compared with reference dose outside of the shielding material. Average delivered gonadal dose inside the shielding material was 0.01 Gy. By the result of MOSFET dosimetry, we verified that gonadal dose was decreased by using gonad shielding material. In compare with TLD dosimetry, we could measure the exposed dose easily and precisely with MOSFET modality

  9. MOSFET Dosimetry for Evaluation of Gonad Shielding during Radiotherapy

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Hwi Young; Choi, Yun Seok; Park, So Yeon; Park, Yang Kyun [Seoul National University College of Medicine, Seoul (Korea, Republic of); Ye, Sung Joon [Seoul National University, Seoul (Korea, Republic of)

    2011-03-15

    In order to confirm feasibility of MOSFET modality in use of in vivo dosimetry, evaluation of gonad shielding in order to minimize gonadal dose of patients undergoing radiotherapy by using MOSFET modality was performed. Gonadal dose of patients undergoing radiotherapy for rectal cancer in the department of radiation oncology of Seoul National University Hospital since 2009 was measured. 6 MV and 15 MV photon beams emitted from Varian 21EX LINAC were used for radiotherapy. In order to minimize exposed dose caused by the scattered ray not only from collimator of LINAC but also from treatment region inside radiation field, we used box.shaped lead shielding material. The shielding material was made of the lead block and consists of 7.5 cm x 9.5 cm x 5.5 cm sized case and 9 cm x 9.5 cm x 1 cm sized cover. Dosimetry for evaluation of gonad shielding was done with MOSFET modality. By protecting with gonad shielding material, average gonadal dose of patients was decreased by 23.07% compared with reference dose outside of the shielding material. Average delivered gonadal dose inside the shielding material was 0.01 Gy. By the result of MOSFET dosimetry, we verified that gonadal dose was decreased by using gonad shielding material. In compare with TLD dosimetry, we could measure the exposed dose easily and precisely with MOSFET modality.

  10. Measurement of Gamma Knife registered helmet factors using MOSFETs

    International Nuclear Information System (INIS)

    Kurjewicz, Laryssa; Berndt, Anita

    2007-01-01

    The relative dose rate for the different Gamma Knife registered helmets (4, 8, 14, and 18 mm) is characterized by their respective helmet factors. Since the plateau of the dose profile for the 4 mm helmet is at most 1 mm wide, detector choices are limited. Traditionally helmet factors have been measured using 1x1x1 mm 3 thermoluminescent dosimeters (TLDs). However, these are time-consuming, cumbersome measurements. This article investigates the use of metal-oxide-semiconductor field effect transistors (MOSFETs) (active area of 0.2x0.2 mm 2 ) as a more accurate and convenient dosimeter. Their suitability for these measurements was confirmed by basic characterization measurements. Helmet factors were measured using both MOSFETs and the established TLD approach. A custom MOSFET cassette was designed in analogy to the Elekta TLD cassette (Elekta Instruments AB) for use with the Elekta dosimetry sphere. Although both dosimeters provided values within 3% of the manufacturer's suggestion, MOSFETs provided superior accuracy and precision, in a fraction of the time required for the TLD measurements. Thus, MOSFETs proved to be a reasonable alternative to TLDs for performing helmet factor measurements

  11. Experimental study of sector and linear array ultrasound accuracy and the influence of navigated 3D-reconstruction as compared to MRI in a brain tumor model.

    Science.gov (United States)

    Siekmann, Max; Lothes, Thomas; König, Ralph; Wirtz, Christian Rainer; Coburger, Jan

    2018-03-01

    Currently, intraoperative ultrasound in brain tumor surgery is a rapidly propagating option in imaging technology. We examined the accuracy and resolution limits of different ultrasound probes and the influence of 3D-reconstruction in a phantom and compared these results to MRI in an intraoperative setting (iMRI). An agarose gel phantom with predefined gel targets was examined with iMRI, a sector (SUS) and a linear (LUS) array probe with two-dimensional images. Additionally, 3D-reconstructed sweeps in perpendicular directions were made of every target with both probes, resulting in 392 measurements. Statistical calculations were performed, and comparative boxplots were generated. Every measurement of iMRI and LUS was more precise than SUS, while there was no apparent difference in height of iMRI and 3D-reconstructed LUS. Measurements with 3D-reconstructed LUS were always more accurate than in 2D-LUS, while 3D-reconstruction of SUS showed nearly no differences to 2D-SUS in some measurements. We found correlations of 3D-reconstructed SUS and LUS length and width measurements with 2D results in the same image orientation. LUS provides an accuracy and resolution comparable to iMRI, while SUS is less exact than LUS and iMRI. 3D-reconstruction showed the potential to distinctly improve accuracy and resolution of ultrasound images, although there is a strong correlation with the sweep direction during data acquisition.

  12. Performance of the digene LQ, RH and PS HPVs genotyping systems on clinical samples and comparison with HC2 and PCR-based Linear Array.

    Science.gov (United States)

    Godínez, Jose M; Tous, Sara; Baixeras, Nuria; Moreno-Crespi, Judith; Alejo, María; Lejeune, Marylène; Bravo, Ignacio G; Bosch, F Xavier; de Sanjosé, Silvia

    2011-11-18

    Certain Human Papillomaviruses (HPVs) are the infectious agents involved in cervical cancer development. Detection of HPVs DNA is part of the cervical cancer screening protocols and HPVs genotyping has been proposed for its inclusion in these preventive programs. The aim of this study was to evaluate three novel genotyping tests, namely Qiagen LQ, RH and PS, in clinical samples with and without abnormalities. For this, 305 cervical samples were processed and the results of the evaluated techniques were compared with those obtained in the HPVs diagnostic process in our lab, by using HC2 and Linear Array (LA) technologies. The concordances and kappa statistics (k) for each technique compared with HC2 were 98.69% (k = 0.94) for LQ, 98.03% (k = 0.91) for RH and 91.80% (k = 0.82) for PS. There was a very good agreement in HPVs type-specific concordance for the most prevalent types HPV16 (kappa range = 0.83-0.90), HPV18 (k.r.= 0.74-0.80) and HPV45 (k.r.= 0.82-0.90). The three tests showed an overall good concordance for HPVs detection when compared with HR-HC2 system. LQ and RH rendered lower detection rate for multiple infections than LA genotyping. However, our understanding of the clinical significance of multiple HPVs infections is still incomplete and therefore the relevance of the lower ability to detect multiple infections needs to be evaluated.

  13. Rapid long-wave infrared laser-induced breakdown spectroscopy measurements using a mercury-cadmium-telluride linear array detection system.

    Science.gov (United States)

    Yang, Clayton S-C; Brown, Eiei; Kumi-Barimah, Eric; Hommerich, Uwe; Jin, Feng; Jia, Yingqing; Trivedi, Sudhir; D'souza, Arvind I; Decuir, Eric A; Wijewarnasuriya, Priyalal S; Samuels, Alan C

    2015-11-20

    In this work, we develop a mercury-cadmium-telluride linear array detection system that is capable of rapidly capturing (∼1-5  s) a broad spectrum of atomic and molecular laser-induced breakdown spectroscopy (LIBS) emissions in the long-wave infrared (LWIR) region (∼5.6-10  μm). Similar to the conventional UV-Vis LIBS, a broadband emission spectrum of condensed phase samples covering the whole 5.6-10 μm region can be acquired from just a single laser-induced microplasma or averaging a few single laser-induced microplasmas. Atomic and molecular signature emission spectra of solid inorganic and organic tablets and thin liquid films deposited on a rough asphalt surface are observed. This setup is capable of rapidly probing samples "as is" without the need of elaborate sample preparation and also offers the possibility of a simultaneous UV-Vis and LWIR LIBS measurement.

  14. Quantum Mechanical Study of Nanoscale MOSFET

    Science.gov (United States)

    Svizhenko, Alexei; Anantram, M. P.; Govindan, T. R.; Biegel, Bryan

    2001-01-01

    The steady state characteristics of MOSFETS that are of practical Interest are the drive current, off-current, dope of drain current versus drain voltage, and threshold voltage. In this section, we show that quantum mechanical simulations yield significantly different results from drift-diffusion based methods. These differences arise because of the following quantum mechanical features: (I) polysilicon gate depletion in a manner opposite to the classical case (II) dependence of the resonant levels in the channel on the gate voltage, (III) tunneling of charge across the gate oxide and from source to drain, (IV) quasi-ballistic flow of electrons. Conclusions dI/dV versus V does not increase in a manner commensurate with the increase in number of subbands. - The increase in dI/dV with bias is much smaller then the increase in the number of subbands - a consequence of bragg reflection. Our calculations show an increase in transmission with length of contact, as seen in experiments. It is desirable for molecular electronics applications to have a small contact area, yet large coupling. In this case, the circumferential dependence of the nanotube wave function dictates: - Transmission in armchair tubes saturates around unity - Transmission in zigzag tubes saturates at two.

  15. Thermal drift reduction with multiple bias current for MOSFET dosimeters

    Energy Technology Data Exchange (ETDEWEB)

    Carvajal, M A; Martinez-Olmos, A; Morales, D P; Lopez-Villanueva, J A; Palma, A J [Departamento de Electronica y TecnologIa de Computadores, ETSIIT, Universidad de Granada, E-18071 Granada (Spain); Lallena, A M, E-mail: carvajal@ugr.es [Departamento de Fisica Atomica, Molecular y Nuclear, Universidad de Granada, E-18071 Granada (Spain)

    2011-06-21

    New thermal compensation methods suitable for p-channel MOSFET (pMOS) dosimeters with the usual dose readout procedure based on a constant drain current are presented. Measuring the source-drain voltage shifts for two or three different drain currents and knowing the value of the zero-temperature coefficient drain current, I{sub ZTC}, the thermal drift of source-drain or threshold voltages can be significantly reduced. Analytical expressions for the thermal compensation have been theoretically deduced on the basis of a linear dependence on temperature of the parameters involved. The proposed thermal modelling has been experimentally proven. These methods have been applied to a group of ten commercial pMOS transistors (3N163). The thermal coefficients of the source-drain voltage and the threshold voltage were reduced from -3.0 mV deg. C{sup -1}, in the worst case, down to -70 {mu}V deg. C{sup -1}. This means a thermal drift of -2.4 mGy deg. C{sup -1} for the dosimeter. When analysing the thermal drifts of all the studied transistors, in the temperature range from 19 to 36 deg. C, uncertainty was obtained in the threshold voltage due to a thermal drift of {+-}9mGy (2 SD), a commonly acceptable value in most radiotherapy treatments. The procedures described herein provide thermal drift reduction comparable to that of other technological or numerical strategies, but can be used in a very simple and low-cost dosimetry sensor.

  16. Research of shot noise based on realistic nano-MOSFETs

    Directory of Open Access Journals (Sweden)

    Xiaofei Jia

    2017-05-01

    Full Text Available Experimental measurements and simulation results have shown that the dominant noise source of current noise changes from thermal noise to shot noise with scaling of MOSFET, and shot noise were suppressed by Fermi and Coulomb interactions. In this paper, Shot noise test system is established, and experimental results proved that shot noise were suppressed, and the expressions of shot noise in realistic nano-MOSFETs are derived with considering Fermi effect, Coulomb interaction and the combination of the both co-existence, respectively. On this basis, the variation of shot noise with voltage, temperature and source-drain doping were researched. The results we obtained are consistent with those from experiments and the theoretically explanation is given. At the same time, the shot noise test system is suitable for traditional nanoscale electronic components; the shot noise model is suitable for nanoscale MOSFET.

  17. Numerical simulation of long-term radiation effects for MOSFETs

    International Nuclear Information System (INIS)

    Wei Yuan; Xie Honggang; Gong Ding; Zhu Jinhui; Niu Shengli; Huang Liuxing

    2013-01-01

    A coupled algorithm is introduced to simulate the long-term radiation effects of MOSFETs, which combines particle transport with semiconductor governing equations. The former is dealt with Monte-Carlo method, and the latter is solved by finite-volume method. The trapped charge in SiO 2 and the free charge in Si are both described by the drift-diffusion model, and the deposited energy by incident particles can be coupled with the continuous equations of charge, acting as a source item. The discrete form of governing equations is obtained using the finite-volume method, and the numerical solutions of these equations are the long-term radiation response result of MOSFETs. The threshold voltage shift and off-state leakage current of an irradiated MOSFET are simulated with the coupled algorithm respectively, showing a good accordance with results by other calculations. (authors)

  18. Effects of Lightning Injection on Power-MOSFETs

    Science.gov (United States)

    Celaya, Jose; Saha, Sankalita; Wysocki, Phil; Ely, Jay; Nguyen, Truong; Szatkowski, George; Koppen, Sandra; Mielnik, John; Vaughan, Roger; Goebel, Kai

    2009-01-01

    Lightning induced damage is one of the major concerns in aircraft health monitoring. Such short-duration high voltages can cause significant damage to electronic devices. This paper presents a study on the effects of lightning injection on power metal-oxide semiconductor field effect transistors (MOSFETs). This approach consisted of pin-injecting lightning waveforms into the gate, drain and/or source of MOSFET devices while they were in the OFF-state. Analysis of the characteristic curves of the devices showed that for certain injection modes the devices can accumulate considerable damage rendering them inoperable. Early results demonstrate that a power MOSFET, even in its off-state, can incur considerable damage due to lightning pin injection, leading to significant deviation in its behavior and performance, and to possibly early device failures.

  19. Clinical implementation of MOSFET detectors for dosimetry in electron beams

    International Nuclear Information System (INIS)

    Bloemen-van Gurp, Esther J.; Minken, Andre W.H.; Mijnheer, Ben J.; Dehing-Oberye, Cary J.G.; Lambin, Philippe

    2006-01-01

    Background and purpose: To determine the factors converting the reading of a MOSFET detector placed on the patient's skin without additional build-up to the dose at the depth of dose maximum (D max ) and investigate their feasibility for in vivo dose measurements in electron beams. Materials and methods: Factors were determined to relate the reading of a MOSFET detector to D max for 4-15 MeV electron beams in reference conditions. The influence of variation in field size, SSD, angle and field shape on the MOSFET reading, obtained without additional build-up, was evaluated using 4, 8 and 15 MeV beams and compared to ionisation chamber data at the depth of dose maximum (z max ). Patient entrance in vivo measurements included 40 patients, mostly treated for breast tumours. The MOSFET reading, converted to D max , was compared to the dose prescribed at this depth. Results: The factors to convert MOSFET reading to D max vary between 1.33 and 1.20 for the 4 and 15 MeV beams, respectively. The SSD correction factor is approximately 8% for a change in SSD from 95 to 100 cm, and 2% for each 5-cm increment above 100 cm SSD. A correction for fields having sides smaller than 6 cm and for irregular field shape is also recommended. For fields up to 20 x 20 cm 2 and for oblique incidence up to 45 deg., a correction is not necessary. Patient measurements demonstrated deviations from the prescribed dose with a mean difference of -0.7% and a standard deviation of 2.9%. Conclusion: Performing dose measurements with MOSFET detectors placed on the patient's skin without additional build-up is a well suited technique for routine dose verification in electron beams, when applying the appropriate conversion and correction factors

  20. MOSFET dosimetry of the radiation therapy microbeams at the European synchrotron radiation facility

    International Nuclear Information System (INIS)

    Rozenfeld, A.; Lerch, M.

    2002-01-01

    Full text: We have developed an innovative on-line MOSFET readout system for use in the quality assurance of radiation treatment beams. Recently the system has found application in areas where excellent spatial resolution is also a requirement in the quality assurance process, for example IMRT, and microbeam radiation therapy. The excellent spatial resolution is achieved by using a quadruple RADFET TM chip in 'edge on' mode. In developing this approach we have found that the system can be utilised to determine any error in the beam profile measurements due to misalignment of RADFET with respect to the radiation beam or microbeam. Using this approach will ensure that the excellent spatial resolution of the RADFET used in 'edge-on' mode is fully utilised. In this work we report on dosimetry measurements performed at the microbeam radiation therapy beamline located at the European Synchrotron Radiation Facility. The synchrotron planar array microbeam with size 10-30 μm and pitch ∼200 μm has found an important application in microbeam radiation therapy (MRT) of brain tumours in infants for whom other kinds of radiotherapy are inadequate and/or unsafe. The radiation damage from an array of parallel microbeams correlates strongly with the range of peak-valley dose ratios (PVDR), ie, the range of the ratio of the absorbed dose to tissue directly in line with the mid-plane of the microbeam to that in the mid-plane between adjacent microbeams. Novel physical dosimetry of the microbeams using the online MOSFET reader system will be presented. Comparison of the experimental results with both GaF film measurements and Monte Carlo computer-simulated dosimetry are described here for selected points in the peak and valley regions of a microbeam-irradiated tissue phantom

  1. Aspect Ratio Model for Radiation-Tolerant Dummy Gate-Assisted n-MOSFET Layout.

    Science.gov (United States)

    Lee, Min Su; Lee, Hee Chul

    2014-01-01

    In order to acquire radiation-tolerant characteristics in integrated circuits, a dummy gate-assisted n-type metal oxide semiconductor field effect transistor (DGA n-MOSFET) layout was adopted. The DGA n-MOSFET has a different channel shape compared with the standard n-MOSFET. The standard n-MOSFET has a rectangular channel shape, whereas the DGA n-MOSFET has an extended rectangular shape at the edge of the source and drain, which affects its aspect ratio. In order to increase its practical use, a new aspect ratio model is proposed for the DGA n-MOSFET and this model is evaluated through three-dimensional simulations and measurements of the fabricated devices. The proposed aspect ratio model for the DGA n-MOSFET exhibits good agreement with the simulation and measurement results.

  2. Spin injection, transport, and read/write operation in spin-based MOSFET

    International Nuclear Information System (INIS)

    Saito, Yoshiaki; Marukame, Takao; Inokuchi, Tomoaki; Ishikawa, Mizue; Sugiyama, Hideyuki; Tanamoto, Tetsufumi

    2011-01-01

    We proposed a novel spin-based MOSFET 'Spin-Transfer-torque-Switching MOSFET (STS-MOSFET)' that offers non-volatile memory and transistor functions with complementary metal-oxide-semiconductor (CMOS) compatibility, high endurance and fast write time using STS. The STS-MOSFETs with Heusler alloy (Co 2 Fe 1 Al 0.5 Si 0.5 ) were prepared and reconfigurability of a novel spintronics-based MOSFET, STS-MOSFET, was successfully realized for the transport properties owing to reduction of the contact resistance in ferromagnetic metal/thin insulator tunnel barrier/Si junctions. The device showed magnetocurrent (MC) and write characteristics with the endurance of over 10 5 cycles. It was also clarified that the read characteristic can be improved in terms of MC ratio, however, is deteriorated in terms of the mobility by choosing connection configurations of the source and the drain in the STS-MOSFETs.

  3. Novel high-voltage power lateral MOSFET with adaptive buried electrodes

    International Nuclear Information System (INIS)

    Zhang Wen-Tong; Wu Li-Juan; Qiao Ming; Luo Xiao-Rong; Zhang Bo; Li Zhao-Ji

    2012-01-01

    A new high-voltage and low-specific on-resistance (R on,sp ) adaptive buried electrode (ABE) silicon-on-insulator (SOI) power lateral MOSFET and its analytical model of the electric fields are proposed. The MOSFET features are that the electrodes are in the buried oxide (BOX) layer, the negative drain voltage V d is divided into many partial voltages and the output to the electrodes is in the buried oxide layer and the potentials on the electrodes change linearly from the drain to the source. Because the interface silicon layer potentials are lower than the neighboring electrode potentials, the electronic potential wells are formed above the electrode regions, and the hole potential wells are formed in the spacing of two neighbouring electrode regions. The interface hole concentration is much higher than the electron concentration through designing the buried layer electrode potentials. Based on the interface charge enhanced dielectric layer field theory, the electric field strength in the buried layer is enhanced. The vertical electric field E I and the breakdown voltage (BV) of ABE SOI are 545 V/μm and −587 V in the 50 μm long drift region and the 1 μm thick dielectric layer, and a low R on,sp is obtained. Furthermore, the structure also alleviates the self-heating effect (SHE). The analytical model matches the simulation results. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  4. An analytical gate tunneling current model for MOSFETs

    Energy Technology Data Exchange (ETDEWEB)

    Kazerouni, Iman Abaspur, E-mail: imanabaspur@gmail.com; Hosseini, Seyed Ebrahim [Sabzevar Tarbiat Moallem University, Electrical and Computer Department (Iran, Islamic Republic of)

    2012-03-15

    Gate tunneling current of MOSFETs is an important factor in modeling ultra small devices. In this paper, gate tunneling in present-generation MOSFETs is studied. In the proposed model, we calculate the electron wave function at the semiconductor-oxide interface and inversion charge by treating the inversion layer as a potential well, including some simplifying assumptions. Then we compute the gate tunneling current using the calculated wave function. The proposed model results have an excellent agreement with experimental results in the literature.

  5. RTS amplitudes in decananometer MOSFETs: 3-D simulation study

    OpenAIRE

    Asenov, A.; Balasubramaniam, R.; Brown, A.R.; Davies, J.H.

    2003-01-01

    In this paper we study the amplitudes of random telegraph signals (RTS) associated with the trapping of a single electron in defect states at the Si/SiO/sub 2/ interface of sub-100-nm (decananometer) MOSFETs employing three-dimensional (3-D) "atomistic" simulations. Both continuous doping charge and random discrete dopants in the active region of the MOSFETs are considered in the simulations. The dependence of the RTS amplitudes on the position of the trapped charge in the channel and on devi...

  6. Automation of the linear array HPV genotyping test and its application for routine typing of human papillomaviruses in cervical specimens of women without cytological abnormalities in Switzerland.

    Science.gov (United States)

    Dobec, Marinko; Bannwart, Fridolin; Kaeppeli, Franz; Cassinotti, Pascal

    2009-05-01

    There is a need for reliable, automated high throughput HPV detection and genotyping methods for pre- and post-prophylactic vaccine intervention analyses. To optimize the linear array (LA) HPV genotyping test (Roche Diagnostics, Rotkreuz) in regard to possible automation steps for the routine laboratory diagnosis of HPV infections and to analyze the HPV genotype distribution in cervical specimens of women without cytological abnormalities in Switzerland. 680 cervical cell specimens with normal cytology, obtained from women undergoing routine cervical screening by liquid-based Pap smear, were analyzed by the LA HPV genotyping test for HPV-DNA. The automation of the LA HPV genotyping test resulted in a total hands-on time reduction of 255 min (from 480 to 225 min; 53%). Any of 37 HPV genotypes were detected in 117 (17.2%) and high-risk (HR) HPV in 55 (8.1%) of 680 women with normal cytology. The highest prevalence of any HPV (28.1%) and HR-HPV (15.1%) was observed in age-group 21-30 and showed a continuous decrease in older age-groups. The most common HR-HPV genotypes were HPV-16 (12%), HPV-31 (9.4%), HPV-52 (6%), HPV-51 (5.1%), HPV-45 (4.3%), HPV-58 (4.3%) and HPV-59 (4.3%). The optimization and automation of the LA HPV genotyping test makes it suited for high throughput HPV detection and typing. The epidemiological data provides information about distribution of HPV genotypes in women without cytological abnormalities in Switzerland and may be important for determining the future impact of vaccines and potential changes in the country's epidemiological HPV profile.

  7. Performance of the digene LQ, RH and PS HPVs genotyping systems on clinical samples and comparison with HC2 and PCR-based Linear Array

    Directory of Open Access Journals (Sweden)

    Godínez Jose M

    2011-11-01

    Full Text Available Abstract Background Certain Human Papillomaviruses (HPVs are the infectious agents involved in cervical cancer development. Detection of HPVs DNA is part of the cervical cancer screening protocols and HPVs genotyping has been proposed for its inclusion in these preventive programs. The aim of this study was to evaluate three novel genotyping tests, namely Qiagen LQ, RH and PS, in clinical samples with and without abnormalities. For this, 305 cervical samples were processed and the results of the evaluated techniques were compared with those obtained in the HPVs diagnostic process in our lab, by using HC2 and Linear Array (LA technologies. Results The concordances and kappa statistics (k for each technique compared with HC2 were 98.69% (k = 0.94 for LQ, 98.03% (k = 0.91 for RH and 91.80% (k = 0.82 for PS. There was a very good agreement in HPVs type-specific concordance for the most prevalent types HPV16 (kappa range = 0.83-0.90, HPV18 (k.r.= 0.74-0.80 and HPV45 (k.r.= 0.82-0.90. Conclusions The three tests showed an overall good concordance for HPVs detection when compared with HR-HC2 system. LQ and RH rendered lower detection rate for multiple infections than LA genotyping. However, our understanding of the clinical significance of multiple HPVs infections is still incomplete and therefore the relevance of the lower ability to detect multiple infections needs to be evaluated.

  8. Photosensitive N channel MOSFET device on silicon on sapphire substrate

    International Nuclear Information System (INIS)

    Le Goascoz, V.; Borel, J.

    1975-01-01

    An anomalous behavior of the N channel output current characteristic in a SOS MOSFET with a floating bulk is described. Such a phenomenon can be used in a photosensitive device with internal gain. Such devices can be used on SOS substrates to achieve integrated circuits with high insulating voltages and data transmission by optical means [fr

  9. High frequency MOSFET gate drivers technologies and applications

    CERN Document Server

    Zhang, Zhiliang

    2017-01-01

    This book describes high frequency power MOSFET gate driver technologies, including gate drivers for GaN HEMTs, which have great potential in the next generation of switching power converters. Gate drivers serve as a critical role between control and power devices.

  10. Dc-To-Dc Converter Uses Reverse Conduction Of MOSFET's

    Science.gov (United States)

    Gruber, Robert P.; Gott, Robert W.

    1991-01-01

    In modified high-power, phase-controlled, full-bridge, pulse-width-modulated dc-to-dc converters, switching devices power metal oxide/semiconductor field-effect transistors (MOSFET's). Decreases dissipation of power during switching by eliminating approximately 0.7-V forward voltage drop in anti-parallel diodes. Energy-conversion efficiency increased.

  11. Analyzing Single-Event Gate Ruptures In Power MOSFET's

    Science.gov (United States)

    Zoutendyk, John A.

    1993-01-01

    Susceptibilities of power metal-oxide/semiconductor field-effect transistors (MOSFET's) to single-event gate ruptures analyzed by exposing devices to beams of energetic bromine ions while applying appropriate bias voltages to source, gate, and drain terminals and measuring current flowing into or out of each terminal.

  12. MOSFET analog memory circuit achieves long duration signal storage

    Science.gov (United States)

    1966-01-01

    Memory circuit maintains the signal voltage at the output of an analog signal amplifier when the input signal is interrupted or removed. The circuit uses MOSFET /Metal Oxide Semiconductor Field Effect Transistor/ devices as voltage-controlled switches, triggered by an external voltage-sensing device.

  13. Response Of A MOSFET To A Cosmic Ray

    Science.gov (United States)

    Benumof, Reuben; Zoutendyk, John A.

    1988-01-01

    Theoretical paper discusses response of enhancement-mode metal oxide/semiconductor field-effect transistor to cosmic-ray ion that passes perpendicularly through gate-oxide layers. Even if ion causes no permanent damage, temporary increase of electrical conductivity along track of ion large enough and long enough to cause change in logic state in logic circuit containing MOSFET.

  14. Advanced p-MOSFET Ionizing-Radiation Dosimeter

    Science.gov (United States)

    Buehler, Martin G.; Blaes, Brent R.

    1994-01-01

    Circuit measures total dose of ionizing radiation in terms of shift in threshold gate voltage of doped-channel metal oxide/semiconductor field-effect transistor (p-MOSFET). Drain current set at temperature-independent point to increase accuracy in determination of radiation dose.

  15. Effect of interface roughness on the carrier transport in germanium MOSFETs investigated by Monte Carlo method

    International Nuclear Information System (INIS)

    Gang, Du; Xiao-Yan, Liu; Zhi-Liang, Xia; Jing-Feng, Yang; Ru-Qi, Han

    2010-01-01

    Interface roughness strongly influences the performance of germanium metal–organic–semiconductor field effect transistors (MOSFETs). In this paper, a 2D full-band Monte Carlo simulator is used to study the impact of interface roughness scattering on electron and hole transport properties in long- and short- channel Ge MOSFETs inversion layers. The carrier effective mobility in the channel of Ge MOSFETs and the in non-equilibrium transport properties are investigated. Results show that both electron and hole mobility are strongly influenced by interface roughness scattering. The output curves for 50 nm channel-length double gate n and p Ge MOSFET show that the drive currents of n- and p-Ge MOSFETs have significant improvement compared with that of Si n- and p-MOSFETs with smooth interface between channel and gate dielectric. The 82% and 96% drive current enhancement are obtained for the n- and p-MOSFETs with the completely smooth interface. However, the enhancement decreases sharply with the increase of interface roughness. With the very rough interface, the drive currents of Ge MOSFETs are even less than that of Si MOSFETs. Moreover, the significant velocity overshoot also has been found in Ge MOSFETs. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  16. A CMOS matrix for extracting MOSFET parameters before and after irradiation

    International Nuclear Information System (INIS)

    Blaes, B.R.; Buehler, M.G.; Lin, Y.S.; Hicks, K.A.

    1988-01-01

    An addressable matrix of 16 n- and 16 p-MOSFETs has been designed to extract the DC MOSFET parameters for all dc gate bias conditions before and after irradiation. The matrix contains four sets of MOSFETs each with four different geometries that can be biased independently before and after irradiation. Thus the worst-case bias scenarios can be determined. The MOSFET matrix was fabricated at a silicon foundry using a radiation-soft CMOS p-well LOCOS process. Cobalt 60 irradiation results for the n-MOSFETs showed a very low threshold voltage shift of -3mV/krad(Si); whereas, the p-MOSFETs showed 21 mV/krad(Si). The worst-case threshold voltage shift occurred for the n-MOSFET with a gate bias of 5V during anneal, but for the p-MOSFETs, biasing did not affect the shift in the threshold voltage. A parasitic MOSFET dominated the leakage of the n-MOSFET biased with 5V on the gate during irradiation

  17. Separation of effects of oxide-trapped charge and interface-trapped charge on mobility in irradiated power MOSFETs

    International Nuclear Information System (INIS)

    Zupac, D.; Galloway, K.F.; Khosropour, P.; Anderson, S.R.; Schrimpf, R.D.

    1993-01-01

    An effective approach to separating the effects of oxide-trapped charge and interface-trapped charge on mobility degradation in irradiated MOSFETs is demonstrated. It is based on analyzing mobility data sets which have different functional relationships between the radiation-induced-oxide-trapped charge and interface-trapped charge. Separation of effects of oxide-trapped charge and interface-trapped charge is possible only if these two trapped charge components are not linearly dependent. A significant contribution of oxide-trapped charge to mobility degradation is demonstrated and quantified

  18. Anomalous radiation effects in fully depleted SOI MOSFETs fabricated on SIMOX

    Science.gov (United States)

    Li, Ying; Niu, Guofu; Cressler, J. D.; Patel, J.; Marshall, C. J.; Marshall, P. W.; Kim, H. S.; Reed, R. A.; Palmer, M. J.

    2001-12-01

    We investigate the proton tolerance of fully depleted silicon-on-insulator (SOI) MOSFETs with H-gate and regular-gate structural configurations. For the front-gate characteristics, the H-gate does not show the edge leakage observed in the regular-gate transistor. An anomalous kink in the back-gate linear I/sub D/-V/sub GS/ characteristics of the fully depleted SOI nFETs has been observed at high radiation doses. This kink is attributed to charged traps generated in the bandgap at the buried oxide/silicon film interface during irradiation. Extensive two-dimensional simulations with MEDICI were used to understand the physical origin of this kink. We also report unusual self-annealing effects in the devices when they are cooled to liquid nitrogen temperature.

  19. Influence of gamma-ray irradiation on 6H-SiC MOSFETs

    International Nuclear Information System (INIS)

    Ohshima, Takeshi; Yoshikawa, Masahito; Itoh, Hisayoshi; Nashiyama, Isamu; Okada, Sohei

    1998-01-01

    Enhancement-type n-channel MOSFETs were fabricated on 6H-SiC epitaxial films using pyrogenic or dry oxidation process. Oxide-trapped charges and interface traps produced in 6H-Sic MOSFETs by gamma-ray irradiation are evaluated from changes in the subthreshold-current curve. The net numbers of radiation-induced-oxide-trapped charges and interface traps depend on the oxidation process. The 6H-SiC MOSFETs exhibit higher radiation resistance than Si MOSFETs. (author)

  20. Energy and integrated dose dependence of MOSFET dosimeter for clinical electron beams

    International Nuclear Information System (INIS)

    Manigandan, D.; Bharanidharan, G.; Aruna, P.; Ganesan, S.; Tamil Kumar, T.; Rai

    2008-01-01

    In this study, the sensitivity (mV/cGy) and integral dose dependence of a MOSFET detector for different clinical electron beams was studied. Calibrated clinical electron beams (Varian 2100) were used for the exposure. A Markus type parallel plate chamber was used for the absolute dose measurements. In order to study the sensitivity of a MOSFET, the response of the ion chamber and MOSFET for the absorbed dose of 100 cGy was measured. The sensitivity of the MOSFET was then expressed as mV/cGy. Sensitivity was measured for 4-18 MeV electron beams. (author)

  1. Analysis of switching characteristics for negative capacitance ultra-thin-body germanium-on-insulator MOSFETs

    Science.gov (United States)

    Pi-Ho Hu, Vita; Chiu, Pin-Chieh

    2018-04-01

    The impact of device parameters on the switching characteristics of negative capacitance ultra-thin-body (UTB) germanium-on-insulator (NC-GeOI) MOSFETs is analyzed. NC-GeOI MOSFETs with smaller gate length (L g), EOT, and buried oxide thickness (T box) and thicker ferroelectric layer thickness (T FE) exhibit larger subthreshold swing improvements over GeOI MOSFETs due to better capacitance matching. Compared with GeOI MOSFETs, NC-GeOI MOSFETs exhibit better switching time due to improvements in effective drive current (I eff) and subthreshold swing. NC-GeOI MOSFET exhibits larger ST improvements at V dd = 0.3 V (-82.9%) than at V dd = 0.86 V (-9.7%), because NC-GeOI MOSFET shows 18.2 times higher I eff than the GeOI MOSFET at V dd = 0.3 V, while 2.5 times higher I eff at V dd = 0.86 V. This work provides the device design guideline of NC-GeOI MOSFETs for ultra-low power applications.

  2. Ultra-low specific on-resistance SOI double-gate trench-type MOSFET

    International Nuclear Information System (INIS)

    Lei Tianfei; Luo Xiaorong; Ge Rui; Chen Xi; Wang Yuangang; Yao Guoliang; Jiang Yongheng; Zhang Bo; Li Zhaoji

    2011-01-01

    An ultra-low specific on-resistance (R on,sp ) silicon-on-insulator (SOI) double-gate trench-type MOSFET (DG trench MOSFET) is proposed. The MOSFET features double gates and an oxide trench: the oxide trench is in the drift region, one trench gate is inset in the oxide trench and one trench gate is extended into the buried oxide. Firstly, the double gates reduce R on,sp by forming dual conduction channels. Secondly, the oxide trench not only folds the drift region, but also modulates the electric field, thereby reducing device pitch and increasing the breakdown voltage (BV). ABV of 93 V and a R on,sp of 51.8 mΩ·mm 2 is obtained for a DG trench MOSFET with a 3 μm half-cell pitch. Compared with a single-gate SOI MOSFET (SG MOSFET) and a single-gate SOI MOSFET with an oxide trench (SG trench MOSFET), the R on,sp of the DG trench MOSFET decreases by 63.3% and 33.8% at the same BV, respectively. (semiconductor devices)

  3. Single-Event Latchup Testing of the Micrel MIC4424 Dual Power MOSFET Driver

    Science.gov (United States)

    Pellish, J. A.; Boutte, A.; Kim, H.; Phan, A.; Topper, A.

    2016-01-01

    We conducted 47 exposures of four different MIC4424 devices and did not observe any SEL or high-current events. This included worst-case conditions with a LET of 81 MeV-sq cm/mg, applied voltage of 18.5 V, a case temperature greater than 120 C, and a final fluence of 1x10(exp 7)/sq cm. We also monitored both the outputs for the presence of SETs. While the period of the 1 MHz square wave was slightly altered in some cases, no pulses were added or deleted. 1. Purpose: The purpose of this testing is to characterize the BiCMOS/DMOS Micrel MIC4424 dual, non-inverting MOSFET driver for single-event latchup (SEL) susceptibility. These data will be used for flight lot evaluation purposes. 2. Devices Tested: The MIC4423/4424/4425 family are highly reliable BiCMOS/DMOS buffer/driver MOSFET drivers. They are higher output current versions of the MIC4426/4427/4428. They can survive up to 5V of noise spiking, of either polarity, on the ground pin. They can accept, without either damage or logic upset, up to half an amp of reverse current (either polarity) forced back into their outputs. Primarily intended for driving power MOSFETs, the MIC4423/4424/4425 drivers are suitable for driving other loads (capacitive, resistive, or inductive) which require low-impedance, high peak currents, and fast switching times. Heavily loaded clock lines, coaxial cables, or piezoelectric transducers are some examples. The only known limitation on loading is that total power dissipated in the driver must be kept within the maximum power dissipation limits of the package. Five (5) parts were provided for SEL testing. We prepared four parts for irradiation and reserved one piece as an un-irradiated control. More information about the devices can be found in Table 1. The parts were prepared for testing by removing the lid from the CDIP package to expose the target die. The parts were then soldered to small copper circuit adapter boards for easy handling. These parts are fabricated in a bulk Bi

  4. High voltage MOSFET devices and methods of making the devices

    Science.gov (United States)

    Banerjee, Sujit; Matocha, Kevin; Chatty, Kiran

    2018-06-05

    A SiC MOSFET device having low specific on resistance is described. The device has N+, P-well and JFET regions extended in one direction (Y-direction) and P+ and source contacts extended in an orthogonal direction (X-direction). The polysilicon gate of the device covers the JFET region and is terminated over the P-well region to minimize electric field at the polysilicon gate edge. In use, current flows vertically from the drain contact at the bottom of the structure into the JFET region and then laterally in the X direction through the accumulation region and through the MOSFET channels into the adjacent N+ region. The current flowing out of the channel then flows along the N+ region in the Y-direction and is collected by the source contacts and the final metal. Methods of making the device are also described.

  5. Large-Signal DG-MOSFET Modelling for RFID Rectification

    Directory of Open Access Journals (Sweden)

    R. Rodríguez

    2016-01-01

    Full Text Available This paper analyses the undoped DG-MOSFETs capability for the operation of rectifiers for RFIDs and Wireless Power Transmission (WPT at microwave frequencies. For this purpose, a large-signal compact model has been developed and implemented in Verilog-A. The model has been numerically validated with a device simulator (Sentaurus. It is found that the number of stages to achieve the optimal rectifier performance is inferior to that required with conventional MOSFETs. In addition, the DC output voltage could be incremented with the use of appropriate mid-gap metals for the gate, as TiN. Minor impact of short channel effects (SCEs on rectification is also pointed out.

  6. High voltage MOSFET devices and methods of making the devices

    Science.gov (United States)

    Banerjee, Sujit; Matocha, Kevin; Chatty, Kiran

    2015-12-15

    A SiC MOSFET device having low specific on resistance is described. The device has N+, P-well and JFET regions extended in one direction (Y-direction) and P+ and source contacts extended in an orthogonal direction (X-direction). The polysilicon gate of the device covers the JFET region and is terminated over the P-well region to minimize electric field at the polysilicon gate edge. In use, current flows vertically from the drain contact at the bottom of the structure into the JFET region and then laterally in the X direction through the accumulation region and through the MOSFET channels into the adjacent N+ region. The current flowing out of the channel then flows along the N+ region in the Y-direction and is collected by the source contacts and the final metal. Methods of making the device are also described.

  7. Accelerated Aging with Electrical Overstress and Prognostics for Power MOSFETs

    Science.gov (United States)

    Saha, Sankalita; Celaya, Jose Ramon; Vashchenko, Vladislav; Mahiuddin, Shompa; Goebel, Kai F.

    2011-01-01

    Power electronics play an increasingly important role in energy applications as part of their power converter circuits. Understanding the behavior of these devices, especially their failure modes as they age with nominal usage or sudden fault development is critical in ensuring efficiency. In this paper, a prognostics based health management of power MOSFETs undergoing accelerated aging through electrical overstress at the gate area is presented. Details of the accelerated aging methodology, modeling of the degradation process of the device and prognostics algorithm for prediction of the future state of health of the device are presented. Experiments with multiple devices demonstrate the performance of the model and the prognostics algorithm as well as the scope of application. Index Terms Power MOSFET, accelerated aging, prognostics

  8. Prognostics Of Power Mosfets Under Thermal Stress Accelerated Aging Using Data-Driven And Model-Based Methodologies

    Data.gov (United States)

    National Aeronautics and Space Administration — An approach for predicting remaining useful life of power MOSFETs (metal oxide field effect transistor) devices has been developed. Power MOSFETs are semiconductor...

  9. Verification of eye lens dose in IMRT by MOSFET measurement.

    Science.gov (United States)

    Wang, Xuetao; Li, Guangjun; Zhao, Jianling; Song, Ying; Xiao, Jianghong; Bai, Sen

    2018-04-17

    The eye lens is recognized as one of the most radiosensitive structures in the human body. The widespread use of intensity-modulated radiotherapy (IMRT) complicates dose verification and necessitates high standards of dose computation. The purpose of this work was to assess the computed dose accuracy of eye lens through measurements using a metal-oxide-semiconductor field-effect transistor (MOSFET) dosimetry system. Sixteen clinical IMRT plans of head and neck patients were copied to an anthropomorphic head phantom. Measurements were performed using the MOSFET dosimetry system based on the head phantom. Two MOSFET detectors were imbedded in the eyes of the head phantom as the left and the right lens, covered by approximately 5-mm-thick paraffin wax. The measurement results were compared with the calculated values with a dose grid size of 1 mm. Sixteen IMRT plans were delivered, and 32 measured lens doses were obtained for analysis. The MOSFET dosimetry system can be used to verify the lens dose, and our measurements showed that the treatment planning system used in our clinic can provide adequate dose assessment in eye lenses. The average discrepancy between measurement and calculation was 6.7 ± 3.4%, and the largest discrepancy was 14.3%, which met the acceptability criterion set by the American Association of Physicists in Medicine Task Group 53 for external beam calculation for multileaf collimator-shaped fields in buildup regions. Copyright © 2018 American Association of Medical Dosimetrists. Published by Elsevier Inc. All rights reserved.

  10. MOSFET and MOS capacitor responses to ionizing radiation

    Science.gov (United States)

    Benedetto, J. M.; Boesch, H. E., Jr.

    1984-01-01

    The ionizing radiation responses of metal oxide semiconductor (MOS) field-effect transistors (FETs) and MOS capacitors are compared. It is shown that the radiation-induced threshold voltage shift correlates closely with the shift in the MOS capacitor inversion voltage. The radiation-induced interface-state density of the MOSFETs and MOS capacitors was determined by several techniques. It is shown that the presence of 'slow' states can interfere with the interface-state measurements.

  11. First observations of power MOSFET burnout with high energy neutrons

    International Nuclear Information System (INIS)

    Oberg, D.L.; Wert, J.L.; Normand, E.; Majewski, P.P.; Wender, S.A.

    1996-01-01

    Single event burnout was seen in power MOSFETs exposed to high energy neutrons. Devices with rated voltage ≥400 volts exhibited burnout at substantially less than the rated voltage. Tests with high energy protons gave similar results. Burnout was also seen in limited tests with lower energy protons and neutrons. Correlations with heavy-ion data are discussed. Accelerator proton data gave favorable comparisons with burnout rates measured on the APEX spacecraft. Implications for burnout at lower altitudes are also discussed

  12. Magnetoresistance of Si(001) MOSFETs with high concentration of electrons

    Czech Academy of Sciences Publication Activity Database

    Smrčka, Ludvík; Makarovsky, O. N.; Schemenchinskii, S. G.; Vašek, Petr; Jurka, Vlastimil

    2004-01-01

    Roč. 22, - (2004), s. 320-323 ISSN 1386-9477. [International Conference on Electronic Properties of Two-Dimensional Systems /15./. Nara, 14.07.2003-18.07.2003] R&D Projects: GA ČR GA202/01/0754; GA ČR GA202/96/0036 Institutional research plan: CEZ:AV0Z1010914 Keywords : Si MOSFET * magnetoresistance * Hall effect Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.898, year: 2004

  13. Processes in N-channel MOSFETs during postirradiation thermal annealing

    International Nuclear Information System (INIS)

    Pejovic, M.; Jaksic, A.; Ristic, G.; Baljosevic, B.

    1997-01-01

    The processes during postirradiation thermal annealing of γ-ray irradiated n-channel MOSFETs with both wet and dry gate oxides are investigated. For both analysed technologies, a so-called ''latent'' interface trap buildup is observed, followed at very late annealing times by the decrease in the interface-trap density. A model is proposed that successfully accounts for the experimental results. Implications of observed effects for total dose hardness assurance test methods implementation are discussed. (author)

  14. Comparative study of leakage power in CNTFET over MOSFET device

    International Nuclear Information System (INIS)

    Sinha Sanjeet Kumar; Chaudhury Saurabh

    2014-01-01

    A comparison of the CNTFET device with the MOSFET device in the nanometer regime is reported. The characteristics of both devices are observed as varying the oxide thickness. Thereafter, we have analyzed the effect of the chiral vector and the temperature on the threshold voltage of the CNTFET device. After simulation on the HSPICE tool, we observed that the high threshold voltage can be achieved at a low chiral vector pair. It is also observed that the effect of temperature on the threshold voltage of the CNTFET is negligibly small. After that, we have analyzed the channel length variation and their impact on the threshold voltage of the CNTFET as well as MOSFET devices. We found an anomalous effect from our simulation result that the threshold voltage increases with decreasing the channel length in CNTFET devices; this is contrary to the well known short channel effect. It is observed that at below the 10 nm channel length, the threshold voltage is increased rapidly in the case of the CNTFET device, whereas in the case of the MOSFET device, the threshold voltage decreases drastically. (semiconductor devices)

  15. Electrical characterization of Ω-gated uniaxial tensile strained Si nanowire-array metal-oxide-semiconductor field effect transistors with - and channel orientations

    International Nuclear Information System (INIS)

    Habicht, Stefan; Feste, Sebastian; Zhao, Qing-Tai; Buca, Dan; Mantl, Siegfried

    2012-01-01

    Nanowire-array metal-oxide-semiconductor field effect transistors (MOSFETs) were fabricated along and crystal directions on (001) un-/strained silicon-on-insulator substrates. Lateral strain relaxation through patterning was employed to transform biaxial tensile strain into uniaxial tensile strain along the nanowire. Devices feature ideal subthreshold swings and maximum on-current/off-current ratios of 10 11 for n and p-type transistors on both substrates. Electron and hole mobilities were extracted by split C–V method. For p-MOSFETs an increased mobility is observed for channel direction devices compared to devices. The n-MOSFETs showed a 45% increased electron mobility compared to devices. The comparison of strained and unstrained n-MOSFETs along and clearly demonstrates improved electron mobilities for strained channels of both channel orientations.

  16. An in-house developed resettable MOSFET dosimeter for radiotherapy.

    Science.gov (United States)

    Verellen, Dirk; Van Vaerenbergh, Sven; Tournel, Koen; Heuninckx, Karina; Joris, Laurent; Duchateau, Michael; Linthout, Nadine; Gevaert, Thierry; Reynders, Truus; Van de Vondel, Iwein; Coppens, Luc; Depuydt, Tom; De Ridder, Mark; Storme, Guy

    2010-02-21

    The purpose of this note is to report the feasibility and clinical validation of an in-house developed MOSFET dosimetry system and describe an integrated non-destructive reset procedure. Off-the-shelf MOSFETs are connected to a common PC using an 18 bit/analogue-input and 16 bit/output data acquisition card. A reading algorithm was developed defining the zero-temperature-coefficient point (ZTC) to determine the threshold voltage. A wireless interface was established for ease of use. The reset procedure consists of an internal circuit generating a local heating induced by an electrical current. Sensitivity has been investigated as a function of bias voltage (0-9 V) to the gate. Dosimetric properties have been evaluated for 6 MV and 15 MV clinical photon beams and in vivo benchmarking was performed against thermoluminescence dosimeters (TLD) for conventional treatments (two groups of ten patients for each energy) and total body irradiation (TBI). MOSFETS were pre-irradiated with 20 Gy. Sensitivity of 0.08 mV cGy(-1) can be obtained for 200 cGy irradiations at 5 V bias voltage. Ten consecutive measurements at 200 cGy yield a SD of 2.08 cGy (1.05%). Increasing the dose in steps from 5 cGy to 1000 cGy yields a 1.00 Pearson correlation coefficient and agreement within 2.0%. Dose rate dependence (160-800 cGy min(-1)) was within 2.5%, temperature dependence within 2.0% (25-37 degrees C). A strong angular dependence has been observed for gantry incidences exceeding +/-30 degrees C. Dose response is stable up to 50 Gy (saturation occurs at approximately 90 Gy), which is used as threshold dose before resetting the MOSFET. An average measured-over-calculated dose ratio within 1.05 (SD: 0.04) has been obtained in vivo. TBI midplane-dose assessed by entrance and exit dose measurements agreed within 1.9% with ionization chamber in phantom, and within 1.0% with TLD in vivo. An in-house developed resettable MOSFET-based dosimetry system is proposed. The system has been validated

  17. Measurement of the Low Frequency Noise of MOSFETs under Large Signal RF Excitation

    NARCIS (Netherlands)

    van der Wel, A.P.; Klumperink, Eric A.M.; Nauta, Bram

    2002-01-01

    A measurement technique [1] is presented that allows measurement of MOSFET low frequency (LF) noise under large signal RF (Radio Frequency) excitation. Measurements indicate that MOSFETS exhibit a reduction in LF noise when they are cycled from inversion to accummulation and that this reduction does

  18. Characterisation of 10 kV 10 A SiC MOSFET

    DEFF Research Database (Denmark)

    Eni, Emanuel-Petre; Incau, Bogdan Ioan; Munk-Nielsen, Stig

    2015-01-01

    The objective of this paper is to characterize and evaluate the static and dynamic performances of 10 kV 10 A 4H-SIC MOSFETs at high temperatures. The results show good electrical performances of the SiC MOSFETs for high temperature operations. The double-pulse test results showed interesting...

  19. On substrate dopant engineering for ET-SOI MOSFETs with UT-BOX

    International Nuclear Information System (INIS)

    Wu Hao; Xu Miao; Wan Guangxing; Zhu Huilong; Zhao Lichuan; Tong Xiaodong; Zhao Chao; Chen Dapeng; Ye Tianchun

    2014-01-01

    The importance of substrate doping engineering for extremely thin SOI MOSFETs with ultra-thin buried oxide (ES-UB-MOSFETs) is demonstrated by simulation. A new substrate/backgate doping engineering, lateral non-uniform dopant distributions (LNDD) is investigated in ES-UB-MOSFETs. The effects of LNDD on device performance, V t -roll-off, channel mobility and random dopant fluctuation (RDF) are studied and optimized. Fixing the long channel threshold voltage (V t ) at 0.3 V, ES-UB-MOSFETs with lateral uniform doping in the substrate and forward back bias can scale only to 35 nm, meanwhile LNDD enables ES-UB-MOSFETs to scale to a 20 nm gate length, which is 43% smaller. The LNDD degradation is 10% of the carrier mobility both for nMOS and pMOS, but it is canceled out by a good short channel effect controlled by the LNDD. Fixing V t at 0.3 V, in long channel devices, due to more channel doping concentration for the LNDD technique, the RDF in LNDD controlled ES-UB-MOSFETs is worse than in back-bias controlled ES-UB-MOSFETs, but in the short channel, the RDF for LNDD controlled ES-UB-MOSFET is better due to its self-adaption of substrate doping engineering by using a fixed thickness inner-spacer. A novel process flow to form LNDD is proposed and simulated. (semiconductor devices)

  20. Reliability Assessment of SiC Power MOSFETs From The End User's Perspective

    DEFF Research Database (Denmark)

    Karaventzas, Vasilios Dimitris; Nawaz, Muhammad; Iannuzzo, Francesco

    2016-01-01

    The reliability of commercial Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) is investigated, and comparative assessment is performed under various test environments. The MOSFETs are tested both regarding the electrical properties of the dies and the packaging...

  1. Reliability Concerns for Flying SiC Power MOSFETs in Space

    Science.gov (United States)

    Galloway, K. F.; Witulski, A. F.; Schrimpf, R. D.; Sternberg, A. L.; Ball, D. R.; Javanainen, A.; Reed, R. A.; Sierawski, B. D.; Lauenstein, J-M

    2018-01-01

    SiC power MOSFETs are space-ready in terms of typical reliability measures. However, single event burnout (SEB) often occurs at voltages 50% or lower than specified breakdown. Data illustrating burnout for 1200 V devices is reviewed and the space reliability of SiC MOSFETs is discussed.

  2. First nondestructive measurements of power MOSFET single event burnout cross sections

    International Nuclear Information System (INIS)

    Oberg, D.L.; Wert, J.L.

    1987-01-01

    A new technique to nondestructively measure single event burnout cross sections for N-channel power MOSFETs is presented. Previous measurements of power MOSFET burnout susceptibility have been destructive and thus not conducive to providing statistically meaningful burnout probabilities. The nondestructive technique and data for various device types taken at several accelerators, including the LBL Bevalac, are documented. Several new phenomena are observed

  3. Dosimetric evaluation of a MOSFET detector for clinical application in photon therapy.

    Science.gov (United States)

    Kohno, Ryosuke; Hirano, Eriko; Nishio, Teiji; Miyagishi, Tomoko; Goka, Tomonori; Kawashima, Mitsuhiko; Ogino, Takashi

    2008-01-01

    Dosimetric characteristics of a metal oxide-silicon semiconductor field effect transistor (MOSFET) detector are studied with megavoltage photon beams for patient dose verification. The major advantages of this detector are its size, which makes it a point dosimeter, and its ease of use. In order to use the MOSFET detector for dose verification of intensity-modulated radiation therapy (IMRT) and in-vivo dosimetry for radiation therapy, we need to evaluate the dosimetric properties of the MOSFET detector. Therefore, we investigated the reproducibility, dose-rate effect, accumulated-dose effect, angular dependence, and accuracy in tissue-maximum ratio measurements. Then, as it takes about 20 min in actual IMRT for the patient, we evaluated fading effect of MOSFET response. When the MOSFETs were read-out 20 min after irradiation, we observed a fading effect of 0.9% with 0.9% standard error of the mean. Further, we applied the MOSFET to the measurement of small field total scatter factor. The MOSFET for dose measurements of small field sizes was better than the reference pinpoint chamber with vertical direction. In conclusion, we assessed the accuracy, reliability, and usefulness of the MOSFET detector in clinical applications such as pinpoint absolute dosimetry for small fields.

  4. Photodiode 1 × 64 linear array based on a double p-InAsSbP/n-InAs{sub 0.92}Sb{sub 0.08}/n{sup +}-InAs heterostructure

    Energy Technology Data Exchange (ETDEWEB)

    Il’inskaya, N. D., E-mail: ioffeled@mail.ru; Karandashev, S. A. [Russian Academy of Sciences, Ioffe Institute (Russian Federation); Karpukhina, N. G. [Limited Liability Company Ioffe LED Ltd. (Russian Federation); Lavrov, A. A.; Matveev, B. A.; Remennyi, M. A.; Stus, N. M.; Usikova, A. A. [Russian Academy of Sciences, Ioffe Institute (Russian Federation)

    2016-05-15

    The results of studies of the current–voltage characteristics and of the photoelectric and luminescence properties of a monolithic diode 1 × 64 linear array based on p-InAsSbP/n-InAsSb/n{sup +}-InAs with the n{sup +}-InAs-substrate side illuminated and sensitive in the region of 4-μm are reported. An analysis is performed of the mechanisms of current flow in the temperature range of 77–353 K and also of the photosensitivity and the speed of response taking into account the spatial distribution of nonequilibrium radiation and the data of capacitance–voltage measurements.

  5. CMOS-compatible batch processing of monolayer MoS2 MOSFETs

    Science.gov (United States)

    Xiong, Kuanchen; Kim, Hyun; Marstell, Roderick J.; Göritz, Alexander; Wipf, Christian; Li, Lei; Park, Ji-Hoon; Luo, Xi; Wietstruck, Matthias; Madjar, Asher; Strandwitz, Nicholas C.; Kaynak, Mehmet; Lee, Young Hee; Hwang, James C. M.

    2018-04-01

    Thousands of high-performance 2D metal-oxide-semiconductor field effect transistors (MOSFETs) were fabricated on wafer-scale chemical vapor deposited MoS2 with fully-CMOS-compatible processes such as photolithography and aluminum metallurgy. The yield was greater than 50% in terms of effective gate control with less-than-10 V threshold voltage, even for MOSFETs having deep-submicron gate length. The large number of fabricated MOSFETs allowed statistics to be gathered and the main yield limiter to be attributed to the weak adhesion between the transferred MoS2 and the substrate. With cut-off frequencies approaching the gigahertz range, the performances of the MOSFETs were comparable to that of state-of-the-art MoS2 MOSFETs, whether the MoS2 was grown by a thin-film process or exfoliated from a bulk crystal.

  6. Noise analysis of gate electrode work function engineered recessed channel (GEWE-RC) MOSFET

    International Nuclear Information System (INIS)

    Agarwala, Ajita; Chaujar, Rishu

    2012-01-01

    This paper discusses the noise assessment, using ATLAS device simulation software, of a gate electrode work function engineered recessed channel (GEWE-RC) MOSFET involving an RC and GEWE design integrated onto a conventional MOSFET. Furthermore, the behaviour of GEWE-RC MOSFET is compared with that of a conventional MOSFET having the same device parameters. This paper thus optimizes and predicts the feasibility of a novel design, i.e., GEWE-RC MOSFET for high-performance applications where device and noise reduction is a major concern. The noise metrics taken into consideration are: minimum noise figure and optimum source impedance. The statistical tools auto correlation and cross correlation are also analysed owing to the random nature of noise.

  7. Comparative Study of Si and SiC MOSFETs for High Voltage Class D Audio Amplifiers

    DEFF Research Database (Denmark)

    Nielsen, Dennis; Knott, Arnold; Andersen, Michael A. E.

    2014-01-01

    Silicon (Si) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are traditional utilised in class D audio amplifiers. It has been proposed to replace the traditional inefficient electrodynamic transducer with the electrostatic transducer. This imposes new high voltage requirements...... on the MOSFETs of class D amplifiers, and significantly reduces the selection of suitable MOSFETs. As a consequence it is investigated, if Silicon-Carbide (SiC) MOSFETs could represent a valid alternative. The theory of pulse timing errors are revisited for the application of high voltage and capactive loaded...... class D amplifiers. It is shown, that SiC MOSFETs can compete with Si MSOFETs in terms of THD. Validation is done using simulations and a 500 V amplifier driving a 100 nF load. THD+N below 0.3 % is reported...

  8. Dynamic avalanche behavior of power MOSFETs and IGBTs under unclamped inductive switching conditions

    International Nuclear Information System (INIS)

    Lu Jiang; Tian Xiaoli; Lu Shuojin; Zhou Hongyu; Zhu Yangjun; Han Zhengsheng

    2013-01-01

    The ability of high-voltage power MOSFETs and IGBTs to withstand avalanche events under unclamped inductive switching (UIS) conditions is measured. This measurement is to investigate and compare the dynamic avalanche failure behavior of the power MOSFETs and the IGBT, which occur at different current conditions. The UIS measurement results at different current conditions show that the main failure reason of the power MOSFETs is related to the parasitic bipolar transistor, which leads to the deterioration of the avalanche reliability of power MOSFETs. However, the results of the IGBT show two different failure behaviors. At high current mode, the failure behavior is similar to the power MOSFETs situation. But at low current mode, the main failure mechanism is related to the parasitic thyristor activity during the occurrence of the avalanche process and which is in good agreement with the experiment result. (semiconductor devices)

  9. SWNT array resonant gate MOS transistor

    Energy Technology Data Exchange (ETDEWEB)

    Arun, A; Salet, P; Ionescu, A M [NanoLab, Ecole Polytechnique Federale de Lausanne, CH-1015, Lausanne (Switzerland); Campidelli, S; Filoramo, A; Derycke, V; Goffman, M F, E-mail: marcelo.goffman@cea.fr [Laboratoire d' Electronique Moleculaire, SPEC (CNRS URA 2454), IRAMIS, CEA, Gif-sur-Yvette (France)

    2011-02-04

    We show that thin horizontal arrays of single wall carbon nanotubes (SWNTs) suspended above the channel of silicon MOSFETs can be used as vibrating gate electrodes. This new class of nano-electromechanical system (NEMS) combines the unique mechanical and electronic properties of SWNTs with an integrated silicon-based motion detection. Its electrical response exhibits a clear signature of the mechanical resonance of SWNT arrays (120-150 MHz) showing that these thin horizontal arrays behave as a cohesive, rigid and elastic body membrane with a Young's modulus in the order of 1-10 GPa and ultra-low mass. The resonant frequency can be tuned by the gate voltage and its dependence is well understood within the continuum mechanics framework.

  10. SWNT array resonant gate MOS transistor.

    Science.gov (United States)

    Arun, A; Campidelli, S; Filoramo, A; Derycke, V; Salet, P; Ionescu, A M; Goffman, M F

    2011-02-04

    We show that thin horizontal arrays of single wall carbon nanotubes (SWNTs) suspended above the channel of silicon MOSFETs can be used as vibrating gate electrodes. This new class of nano-electromechanical system (NEMS) combines the unique mechanical and electronic properties of SWNTs with an integrated silicon-based motion detection. Its electrical response exhibits a clear signature of the mechanical resonance of SWNT arrays (120-150 MHz) showing that these thin horizontal arrays behave as a cohesive, rigid and elastic body membrane with a Young's modulus in the order of 1-10 GPa and ultra-low mass. The resonant frequency can be tuned by the gate voltage and its dependence is well understood within the continuum mechanics framework.

  11. SWNT array resonant gate MOS transistor

    International Nuclear Information System (INIS)

    Arun, A; Salet, P; Ionescu, A M; Campidelli, S; Filoramo, A; Derycke, V; Goffman, M F

    2011-01-01

    We show that thin horizontal arrays of single wall carbon nanotubes (SWNTs) suspended above the channel of silicon MOSFETs can be used as vibrating gate electrodes. This new class of nano-electromechanical system (NEMS) combines the unique mechanical and electronic properties of SWNTs with an integrated silicon-based motion detection. Its electrical response exhibits a clear signature of the mechanical resonance of SWNT arrays (120-150 MHz) showing that these thin horizontal arrays behave as a cohesive, rigid and elastic body membrane with a Young's modulus in the order of 1-10 GPa and ultra-low mass. The resonant frequency can be tuned by the gate voltage and its dependence is well understood within the continuum mechanics framework.

  12. Application of semiconductor MOSFET and pin diode dosimeters to epithermal neutron beam dose distribution measurements in phantoms

    International Nuclear Information System (INIS)

    Carolan, M.G.; Wallace, S.A.; Allen, B.J.; Rosenfeld, A.B.; Mathur, J.N.

    1996-01-01

    For any clinical application of Boron Neutron Capture Therapy (BNCT) fast and accurate dose calculations will be required for treatment planning. Such calculations are also necessary for the planning and interpretation of results from pre-clinical and clinical trials where the speed of calculation is not so critical. A dose calculation system based on the MCNP Monte Carlo Neutron transport code has been developed by Wallace. This system takes image data from CT scans and constructs a voxel based geometrical model for input into MCNP. To validate the calculations, a number of phantoms were constructed and exposed in the HB11 epithermal neutron beam at the HFR of the CEC Joint Research Centre in Petten. The doses recorded by arrays of PIN diode neutron dosimeters and MOSFET gamma dosimeters in these phantoms were compared with the calculated results from the MCNP dose planning system. Initial results have been reported elsewhere. Poster 197. (author)

  13. Validation of a MOSFET dosemeter system for determining the absorbed and effective radiation doses in diagnostic radiology.

    Science.gov (United States)

    Manninen, A-L; Kotiaho, A; Nikkinen, J; Nieminen, M T

    2015-04-01

    This study aimed to validate a MOSFET dosemeter system for determining absorbed and effective doses (EDs) in the dose and energy range used in diagnostic radiology. Energy dependence, dose linearity and repeatability of the dosemeter were examined. The absorbed doses (ADs) were compared at anterior-posterior projection and the EDs were determined at posterior-anterior, anterior-posterior and lateral projections of thoracic imaging using an anthropomorphic phantom. The radiation exposures were made using digital radiography systems. This study revealed that the MOSFET system with high sensitivity bias supply set-up is sufficiently accurate for AD and ED determination. The dosemeter is recommended to be calibrated for energies 80 kVp. The entrance skin dose level should be at least 5 mGy to minimise the deviation of the individual dosemeter dose. For ED determination, dosemeters should be implanted perpendicular to the surface of the phantom to prevent the angular dependence error. © The Author 2014. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

  14. Measurement of the volume growth rate of single budding yeast with the MOSFET-based microfluidic Coulter counter.

    Science.gov (United States)

    Sun, Jiashu; Stowers, Chris C; Boczko, Erik M; Li, Deyu

    2010-11-07

    We report on measurements of the volume growth rate of ten individual budding yeast cells using a recently developed MOSFET-based microfluidic Coulter counter. The MOSFET-based microfluidic Coulter counter is very sensitive, provides signals that are immune from the baseline drift, and can work with cell culture media of complex composition. These desirable features allow us to directly measure the volume growth rate of single cells of Saccharomyces cerevisiae LYH3865 strain budding yeast in YNB culture media over a whole cell cycle. Results indicate that all budding yeast follow a sigmoid volume growth profile with reduced growth rates at the initial stage before the bud emerges and the final stage after the daughter gets mature. Analysis of the data indicates that even though all piecewise linear, Gomperitz, and Hill's function models can fit the global growth profile equally well, the data strongly support local exponential growth phenomenon. Accurate volume growth measurements are important for applications in systems biology where quantitative parameters are required for modeling and simulation.

  15. Prognostics Approach for Power MOSFET Under Thermal-Stress

    Science.gov (United States)

    Galvan, Jose Ramon Celaya; Saxena, Abhinav; Kulkarni, Chetan S.; Saha, Sankalita; Goebel, Kai

    2012-01-01

    The prognostic technique for a power MOSFET presented in this paper is based on accelerated aging of MOSFET IRF520Npbf in a TO-220 package. The methodology utilizes thermal and power cycling to accelerate the life of the devices. The major failure mechanism for the stress conditions is dieattachment degradation, typical for discrete devices with leadfree solder die attachment. It has been determined that dieattach degradation results in an increase in ON-state resistance due to its dependence on junction temperature. Increasing resistance, thus, can be used as a precursor of failure for the die-attach failure mechanism under thermal stress. A feature based on normalized ON-resistance is computed from in-situ measurements of the electro-thermal response. An Extended Kalman filter is used as a model-based prognostics techniques based on the Bayesian tracking framework. The proposed prognostics technique reports on preliminary work that serves as a case study on the prediction of remaining life of power MOSFETs and builds upon the work presented in [1]. The algorithm considered in this study had been used as prognostics algorithm in different applications and is regarded as suitable candidate for component level prognostics. This work attempts to further the validation of such algorithm by presenting it with real degradation data including measurements from real sensors, which include all the complications (noise, bias, etc.) that are regularly not captured on simulated degradation data. The algorithm is developed and tested on the accelerated aging test timescale. In real world operation, the timescale of the degradation process and therefore the RUL predictions will be considerable larger. It is hypothesized that even though the timescale will be larger, it remains constant through the degradation process and the algorithm and model would still apply under the slower degradation process. By using accelerated aging data with actual device measurements and real

  16. SiC Power MOSFET with Improved Gate Dielectric

    Energy Technology Data Exchange (ETDEWEB)

    Sbrockey, Nick M. [Structured Materials Industries, Inc., Piscataway, NJ (United States); Tompa, Gary S. [Structured Materials Industries, Inc., Piscataway, NJ (United States); Spencer, Michael G. [Structured Materials Industries, Inc., Piscataway, NJ (United States); Chandrashekhar, Chandra M.V. S. [Structured Materials Industries, Inc., Piscataway, NJ (United States)

    2010-08-23

    In this STTR program, Structured Materials Industries (SMI), and Cornell University are developing novel gate oxide technology, as a critical enabler for silicon carbide (SiC) devices. SiC is a wide bandgap semiconductor material, with many unique properties. SiC devices are ideally suited for high-power, highvoltage, high-frequency, high-temperature and radiation resistant applications. The DOE has expressed interest in developing SiC devices for use in extreme environments, in high energy physics applications and in power generation. The development of transistors based on the Metal Oxide Semiconductor Field Effect Transistor (MOSFET) structure will be critical to these applications.

  17. Monte Carlo simulation of MOSFET dosimeter for brachytherapy sources

    International Nuclear Information System (INIS)

    Suchitra, G.; Bharanidharan, G.; Manigandan, D.; Aruna, P.; Ganesan, S.; Subbaiah, K.V.

    2008-01-01

    In vivo patient dose verification is considered to be an important part of quality assurance in radiotherapy, as there may be uncertainty between the prescribed dose and the dose actually delivered to the patients. A dose estimator method was used to calculate the dose in the extremely thin sensitive volume. This work shows the response of MOSFET detector for various brachytherapy sources at various experimental condition and the results were compared with the earlier published values. The details of computations and the results are discussed

  18. SiC MOSFETs based split output half bridge inverter

    DEFF Research Database (Denmark)

    Li, Helong; Munk-Nielsen, Stig; Beczkowski, Szymon

    2014-01-01

    output. The double pulse test shows the devices' current during commutation process and the reduced switching losses of SiC MOSFETs compared to that of the traditional half bridge. The efficiency comparison is presented with experimental results of half bridge power inverter with split output...... and traditional half bridge inverter, from switching frequency 10 kHz to 100 kHz. The experimental results comparison shows that the half bridge with split output has an efficiency improvement of more than 0.5% at 100 kHz switching frequency....

  19. Heavy-ion-induced, gate-rupture in power MOSFETs

    International Nuclear Information System (INIS)

    Fischer, T.A.

    1987-01-01

    A new, heavy-ion-induced, burnout mechanism has been experimentally observed in power metal-oxide-semiconductor field-effect transistors (MOSFETs). This mechanism occurs when a heavy, charged particle passes through the gate oxide region of n- or p-channel devices having sufficient gate-to-source or gate-to-drain bias. The gate-rupture leads to significant permanent degradation of the device. A proposed failure mechanism is discussed and experimentally verified. In addition, the absolute immunity of p-channel devices to heavy-ion-induced, semiconductor burnout is demonstrated and discussed along with new, non-destructive, burnout testing methods

  20. Electric field and temperature effects in irradiated MOSFETs

    Energy Technology Data Exchange (ETDEWEB)

    Silveira, M. A. G., E-mail: marcilei@fei.edu.br; Santos, R. B. B.; Leite, F. G.; Araújo, N. E.; Cirne, K. H.; Melo, M. A. A.; Rallo, A. [Centro Universitário da FEI, São Bernardo do Campo, S.P. (Brazil); Aguiar, Vitor A. P.; Aguirre, F.; Macchione, E. L. A.; Added, N.; Medina, N. H. [Instituto de Física da USP, São Paulo, S.P. (Brazil)

    2016-07-07

    Electronic devices exposed to ionizing radiation exhibit degradation on their electrical characteristics, which may compromise the functionality of the device. Understanding the physical phenomena responsible for radiation damage, which may be specific to a particular technology, it is of extreme importance to develop methods for testing and recovering the devices. The aim of this work is to check the influence of thermal annealing processes and electric field applied during irradiation of Metal Oxide Semiconductor Field Effect Transistors (MOSFET) in total ionizing dose experiments analyzing the changes in the electrical parameters in these devices.

  1. A Unified Channel Charges Expression for Analytic MOSFET Modeling

    Directory of Open Access Journals (Sweden)

    Hugues Murray

    2012-01-01

    Full Text Available Based on a 1D Poissons equation resolution, we present an analytic model of inversion charges allowing calculation of the drain current and transconductance in the Metal Oxide Semiconductor Field Effect Transistor. The drain current and transconductance are described by analytical functions including mobility corrections and short channel effects (CLM, DIBL. The comparison with the Pao-Sah integral shows excellent accuracy of the model in all inversion modes from strong to weak inversion in submicronics MOSFET. All calculations are encoded with a simple C program and give instantaneous results that provide an efficient tool for microelectronics users.

  2. A new memory effect (MSD) in fully depleted SOI MOSFETs

    Science.gov (United States)

    Bawedin, M.; Cristoloveanu, S.; Yun, J. G.; Flandre, D.

    2005-09-01

    We demonstrate that the transconductance and drain current of fully depleted MOSFETs can display an interesting time-dependent hysteresis. This new memory effect, called meta-stable dip (MSD), is mainly due to the long carrier generation lifetime in the silicon film. Our parametric analysis shows that the memory window can be adjusted in view of practical applications. Various measurement conditions and devices with different doping, front oxide and silicon film thicknesses are systematically explored. The MSD effect can be generalized to several fully depleted CMOS technologies. The MSD mechanism is discussed and validated by two-dimensional simulations results.

  3. A Highly Responsive Silicon Nanowire/Amplifier MOSFET Hybrid Biosensor

    Science.gov (United States)

    2015-07-21

    Hybrid Biosensor Jieun Lee1,2, Jaeman Jang1, Bongsik Choi1, Jinsu Yoon1, Jee-Yeon Kim3, Yang-Kyu Choi3, Dong Myong Kim1, Dae Hwan Kim1 & Sung-Jin Choi1...This study demonstrates a hybrid biosensor comprised of a silicon nanowire (SiNW) integrated with an amplifier MOSFET to improve the current response...of field-effect-transistor (FET)-based biosensors . The hybrid biosensor is fabricated using conventional CMOS technology, which has the potential

  4. Computer simulation of ionizing radiation burnout in power MOSFETs

    International Nuclear Information System (INIS)

    Keshavarz, A.A.; Fischer, T.A.; Dawes, W.R. Jr.; Hawkins, C.F.

    1988-01-01

    The transient response of a power MOSFET device to ionizing radiation was examined using the BAMBI device simulator. The radiation rate threshold for burnout was determined for several different cases. The burnout mechanism was attributed to current-induced avalanche. The effects of the applied drain-source voltage and the base width of the parasitic bipolar device on the threshold level were modeled. It was found that the radiation rate threshold is lower at higher drain-source voltages or narrower bases. 8 refs., 17 figs

  5. Carbon nanotube nanoelectrode arrays

    Science.gov (United States)

    Ren, Zhifeng; Lin, Yuehe; Yantasee, Wassana; Liu, Guodong; Lu, Fang; Tu, Yi

    2008-11-18

    The present invention relates to microelectode arrays (MEAs), and more particularly to carbon nanotube nanoelectrode arrays (CNT-NEAs) for chemical and biological sensing, and methods of use. A nanoelectrode array includes a carbon nanotube material comprising an array of substantially linear carbon nanotubes each having a proximal end and a distal end, the proximal end of the carbon nanotubes are attached to a catalyst substrate material so as to form the array with a pre-determined site density, wherein the carbon nanotubes are aligned with respect to one another within the array; an electrically insulating layer on the surface of the carbon nanotube material, whereby the distal end of the carbon nanotubes extend beyond the electrically insulating layer; a second adhesive electrically insulating layer on the surface of the electrically insulating layer, whereby the distal end of the carbon nanotubes extend beyond the second adhesive electrically insulating layer; and a metal wire attached to the catalyst substrate material.

  6. Skin dose measurements using MOSFET and TLD for head and neck patients treated with tomotherapy

    International Nuclear Information System (INIS)

    Kinhikar, Rajesh A.; Murthy, Vedang; Goel, Vineeta; Tambe, Chandrashekar M.; Dhote, Dipak S.; Deshpande, Deepak D.

    2009-01-01

    The purpose of this work was to estimate skin dose for the patients treated with tomotherapy using metal oxide semiconductor field-effect transistors (MOSFETs) and thermoluminescent dosimeters (TLDs). In vivo measurements were performed for two head and neck patients treated with tomotherapy and compared to TLD measurements. The measurements were subsequently carried out for five days to estimate the inter-fraction deviations in MOSFET measurements. The variation between skin dose measured with MOSFET and TLD for first patient was 2.2%. Similarly, the variation of 2.3% was observed between skin dose measured with MOSFET and TLD for second patient. The tomotherapy treatment planning system overestimated the skin dose as much as by 10-12% when compared to both MOSFET and TLD. However, the MOSFET measured patient skin doses also had good reproducibility, with inter-fraction deviations ranging from 1% to 1.4%. MOSFETs may be used as a viable dosimeter for measuring skin dose in areas where the treatment planning system may not be accurate.

  7. Skin dose measurements using MOSFET and TLD for head and neck patients treated with tomotherapy.

    Science.gov (United States)

    Kinhikar, Rajesh A; Murthy, Vedang; Goel, Vineeta; Tambe, Chandrashekar M; Dhote, Dipak S; Deshpande, Deepak D

    2009-09-01

    The purpose of this work was to estimate skin dose for the patients treated with tomotherapy using metal oxide semiconductor field-effect transistors (MOSFETs) and thermoluminescent dosimeters (TLDs). In vivo measurements were performed for two head and neck patients treated with tomotherapy and compared to TLD measurements. The measurements were subsequently carried out for five days to estimate the inter-fraction deviations in MOSFET measurements. The variation between skin dose measured with MOSFET and TLD for first patient was 2.2%. Similarly, the variation of 2.3% was observed between skin dose measured with MOSFET and TLD for second patient. The tomotherapy treatment planning system overestimated the skin dose as much as by 10-12% when compared to both MOSFET and TLD. However, the MOSFET measured patient skin doses also had good reproducibility, with inter-fraction deviations ranging from 1% to 1.4%. MOSFETs may be used as a viable dosimeter for measuring skin dose in areas where the treatment planning system may not be accurate.

  8. Evaluation of performance of metal oxide-silicon semiconductor field effect transistor (MOSFET) dosimeter

    International Nuclear Information System (INIS)

    Nagashima, Hiroyuki; Sano, Naoki; Nakamura, Osamu

    2001-01-01

    The JARP level dosimeter is the most suitable for absorbed dose determination in radiotherapy because of its high accuracy. However, in measuring the dose of an extremely small field, a dosimeter with a smaller active region is required. The active region of the MOSFET dosimeter is very small, having a volume of just 0.02 mm 3 . In this study, we evaluated the performance of MOSFET dosimeters with two different sensitivities and examined the usefulness of the MOSFET dosimeter in stereotactic radiosurgery. Using the high-sensitivity MOSFET dosimeter, we were able to reduce the experimental error of absorbed dose (≤±1.8%), and, by correcting the sensitivity, we could use it as a field dosimeter. By turning detectors inside out, we could reduce directional dependence (≤±1.8%). Correction was necessary in the TMR determination because peak depth shifts according to the material of the detector. In the determination of the dose distribution in the penumbra, the resolution of the MOSFET detectors was equal to that of the diamond detector. In the determination of OPF for the extremely small field, better results were obtained with MOSFET than with other small detectors. The high-sensitivity MOSFET dosimeter could properly evaluate the dose of an extremely small field and will be useful in dosimetry of the maximum dose of the field center in stereotactic radiosurgery. (author)

  9. Application of parallel connected power-MOSFET elements to high current d.c. power supply

    International Nuclear Information System (INIS)

    Matsukawa, Tatsuya; Shioyama, Masanori; Shimada, Katsuhiro; Takaku, Taku; Neumeyer, Charles; Tsuji-Iio, Shunji; Shimada, Ryuichi

    2001-01-01

    The low aspect ratio spherical torus (ST), which has single turn toroidal field coil, requires the extremely high d.c. current like as 20 MA to energize the coil. Considering the ratings of such extremely high current and low voltage, power-MOSFET element is employed as the switching device for the a.c./d.c. converter of power supply. One of the advantages of power-MOSFET element is low on-state resistance, which is to meet the high current and low voltage operation. Recently, the capacity of power-MOSFET element has been increased and its on-state resistance has been decreased, so that the possibility of construction of high current and low voltage a.c./d.c. converter with parallel connected power-MOSFET elements has been growing. With the aim of developing the high current d.c. power supply using power-MOSFET, the basic characteristics of parallel operation with power-MOSFET elements are experimentally investigated. And, the synchronous rectifier type and the bi-directional self commutated type a.c./d.c. converters using parallel connected power-MOSFET elements are proposed

  10. A low specific on-resistance SOI MOSFET with dual gates and a recessed drain

    International Nuclear Information System (INIS)

    Luo Xiao-Rong; Hu Gang-Yi; Zhang Zheng-Yuan; Luo Yin-Chun; Fan Ye; Wang Xiao-Wei; Fan Yuan-Hang; Cai Jin-Yong; Wang Pei; Zhou Kun

    2013-01-01

    A low specific on-resistance (R on,sp ) integrable silicon-on-insulator (SOI) metal-oxide semiconductor field-effect transistor (MOSFET) is proposed and investigated by simulation. The MOSFET features a recessed drain as well as dual gates, which consist of a planar gate and a trench gate extended to the buried oxide layer (BOX) (DGRD MOSFET). First, the dual gates form dual conduction channels, and the extended trench gate also acts as a field plate to improve the electric field distribution. Second, the combination of the trench gate and the recessed drain widens the vertical conduction area and shortens the current path. Third, the P-type top layer not only enhances the drift doping concentration but also modulates the surface electric field distributions. All of these sharply reduce R on,sp and maintain a high breakdown voltage (BV). The BV of 233 V and R on,sp of 4.151 mΩ·cm 2 (V GS = 15 V) are obtained for the DGRD MOSFET with 15-μm half-cell pitch. Compared with the trench gate SOI MOSFET and the conventional MOSFET, R on,sp of the DGRD MOSFET decreases by 36% and 33% with the same BV, respectively. The trench gate extended to the BOX synchronously acts as a dielectric isolation trench, simplifying the fabrication processes. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  11. Formation of a vertical MOSFET for charge sensing in a Si micro-fluidic channel

    International Nuclear Information System (INIS)

    Lyu, Hong-Kun; Kim, Dong-Sun; Shin, Jang-Kyoo; Choi, Pyung; Lee, Jong-Hyun; Park, Hey-Jung; Park, Chin-Sung; Lim, Geun-Bae

    2004-01-01

    We have formed a fluidic channel that can be used in micro-fluidic systems and fabricated a 3-dimensional vertical metal-oxide semiconductor field-effect transistor (vertical MOSFET) in the convex corner of a Si micro-fluidic channel by using an anisotropic tetramethyl ammonium hydroxide (TMAH) etching solution. A Au/Cr layer was used for the gate metal and might be useful for detecting charged biomolecules. The electrical characteristics of the vertical MOSFET and its operation as a chemical sensor were investigated. At V DS = -5 V and V GS = -5 V the drain current of the device was -22.5 μA and the threshold voltage was about -1.4 V. A non-planar, non-rectangular vertical MOSFET with a trapezoidal gate was transformed into an equivalent rectangularly based one by using a Schwartz-Christoffel transformation. The LEVEL1 device parameters of the vertical MOSFET were extracted from the measured electrical device characteristics and were used in the SPICE simulation for the vertical MOSFET. The measured and the simulated results for the vertical PMOSFET showed relatively good agreement. When the vertical MOSFET was dipped into a thiol DNA solution, the drain current decreased due to charged biomolecules probably being adsorbed on the gate, which indicates that a vertical MOSFET in a Si micro-fluidic channel might be useful for sensing charged biomolecules.

  12. Hole mobility enhancement of p-MOSFETs using global and local Ge-channel technologies

    International Nuclear Information System (INIS)

    Takagi, Shinichi; Tezuka, T.; Irisawa, T.; Nakaharai, S.; Maeda, T.; Numata, T.; Ikeda, K.; Sugiyama, N.

    2006-01-01

    Mobility enhancement technologies have currently been recognized as mandatory for future scaled MOSFETs. In this paper, we review our recent results on high hole mobility p-MOSFETs using global/local SiGe or Ge channels. There are two directions for introducing SiGe or Ge channels into Si CMOS platform. One is to use SiGe or Ge global substrates and the other is to form SiGe or Ge-channel regions locally on Si wafers. In both cases, the Ge condensation technique, where Ge-channel layers are formed by oxidizing SiGe films on SOI substrates, are effectively utilized. As for the global technologies, ultrathin GOI substrates are prepared and used to fabricate high mobility GOI p-MOSFETs. As for the local technologies, SGOI or GOI channels are formed locally in the active area of p-MOSFETs on SOI wafers. It is shown that the hole mobility enhancement factor of as high as 10 is obtained in locally fabricated p-MOSFETs through the effects of high-Ge content and the compressive strain. Furthermore, the local Ge-channel technologies are combined with global SiGe or Ge substrates for pursuing the optimal and individual design of n-MOSFETs and p-MOSFETs on a single Si wafer. The CMOS device composed of strained-Si n-MOSFETs and SGOI p-MOSFETs is successfully integrated on a same wafer, which is a promising CMOS structure under deep sub 100 nm technology nodes

  13. SPICE modelling of the transient response of irradiated MOSFETs; Modelisation de la reponse transitoire de MOSFETs irradies avec SPICE

    Energy Technology Data Exchange (ETDEWEB)

    Pouget, V.; Lapuyade, H.; Lewis, D.; Deval, Y.; Fouillat, P. [Bordeaux-1 Univ., IXL, 33 - Talence (France); Sarger, L. [Bordeaux-1 Univ., CPMOH, 33 - Talence (France)

    1999-07-01

    A new SPICE model of irradiated MOSFET taking into account the real response of the 4 electrodes is proposed. The component that has been simulated is an NMOS transistor issued from the AMS BiCMOS 0.8 {mu}m technology. A comparison between SPICE-generated transients and PISCES device simulation demonstrates the accuracy benefits when used in complex electronic architectures. This model could be used when designing electronic circuits able to sustain hardening due to SEE (single event effect), it will be an efficient complement to the physical simulations.

  14. Simulation of dual-gate SOI MOSFET with different dielectric layers

    Science.gov (United States)

    Yadav, Jyoti; Chaudhary, R.; Mukhiya, R.; Sharma, R.; Khanna, V. K.

    2016-04-01

    The paper presents the process design and simulation of silicon-on-insulator (SOI)-based dual-gate metal oxide field-effect transistor (DG-MOSFET) stacked with different dielectric layers on the top of gate oxide. A detailed 2D process simulation of SOI-MOSFETs and its electrical characterization has been done using SILVACO® TCAD tool. A variation in transconductance was observed with different dielectric layers, AlN-gate MOSFET having the highest tranconductance value as compared to other three dielectric layers (SiO2, Si3N4 and Al2O3).

  15. Characterization of MOSFET dosimeters for low-dose measurements in maxillofacial anthropomorphic phantoms.

    Science.gov (United States)

    Koivisto, Juha H; Wolff, Jan E; Kiljunen, Timo; Schulze, Dirk; Kortesniemi, Mika

    2015-07-08

    The aims of this study were to characterize reinforced metal-oxide-semiconductor field-effect transistor (MOSFET) dosimeters to assess the measurement uncertainty, single exposure low-dose limit with acceptable accuracy, and the number of exposures required to attain the corresponding limit of the thermoluminescent dosimeters (TLD). The second aim was to characterize MOSFET dosimeter sensitivities for two dental photon energy ranges, dose dependency, dose rate dependency, and accumulated dose dependency. A further aim was to compare the performance of MOSFETs with those of TLDs in an anthropomorphic phantom head using a dentomaxillofacial CBCT device. The uncertainty was assessed by exposing 20 MOSFETs and a Barracuda MPD reference dosimeter. The MOSFET dosimeter sensitivities were evaluated for two photon energy ranges (50-90 kVp) using a constant dose and polymethylmethacrylate backscatter material. MOSFET and TLD comparative point-dose measurements were performed on an anthropomorphic phantom that was exposed with a clinical CBCT protocol. The MOSFET single exposure low dose limit (25% uncertainty, k = 2) was 1.69 mGy. An averaging of eight MOSFET exposures was required to attain the corresponding TLD (0.3 mGy) low-dose limit. The sensitivity was 3.09 ± 0.13 mV/mGy independently of the photon energy used. The MOSFET dosimeters did not present dose or dose rate sensitivity but, however, presented a 1% decrease of sensitivity per 1000 mV for accumulated threshold voltages between 8300 mV and 17500 mV. The point doses in an anthropomorphic phantom ranged for MOSFETs between 0.24 mGy and 2.29 mGy and for TLDs between 0.25 and 2.09 mGy, respectively. The mean difference was -8%. The MOSFET dosimeters presented statistically insignificant energy dependency. By averaging multiple exposures, the MOSFET dosimeters can achieve a TLD-comparable low-dose limit and constitute a feasible method for diagnostic dosimetry using anthropomorphic phantoms. However, for single in

  16. Device Performance and Reliability Improvements of AlGaBN/GaN/Si MOSFET

    Science.gov (United States)

    2016-02-04

    AFRL-AFOSR-JP-TR-2016-0037 Device Performance and Reliablity Improvements of AlGaBN/GaN/Si MOSFET Robert Wallace UNIVERSITY OF TEXAS AT DALLAS Final...GaN/Si MOSFET 5a.  CONTRACT NUMBER 5b.  GRANT NUMBER FA2386-14-1-4069 5c.  PROGRAM ELEMENT NUMBER 61102F 6. AUTHOR(S) Robert Wallace 5d.  PROJECT...AOARD Grant FA2386-14-1-4069 Device Performance and Reliability Improvements of AlGaN/GaN/Si MOSFET US 12 month extension (2014 – 2015) for current

  17. Characterization of MOSFET dosimeters for low‐dose measurements in maxillofacial anthropomorphic phantoms

    Science.gov (United States)

    Wolff, Jan E.; Kiljunen, Timo; Schulze, Dirk; Kortesniemi, Mika

    2015-01-01

    The aims of this study were to characterize reinforced metal‐oxide‐semiconductor field‐effect transistor (MOSFET) dosimeters to assess the measurement uncertainty, single exposure low‐dose limit with acceptable accuracy, and the number of exposures required to attain the corresponding limit of the thermoluminescent dosimeters (TLD). The second aim was to characterize MOSFET dosimeter sensitivities for two dental photon energy ranges, dose dependency, dose rate dependency, and accumulated dose dependency. A further aim was to compare the performance of MOSFETs with those of TLDs in an anthropomorphic phantom head using a dentomaxillofacial CBCT device. The uncertainty was assessed by exposing 20 MOSFETs and a Barracuda MPD reference dosimeter. The MOSFET dosimeter sensitivities were evaluated for two photon energy ranges (50–90 kVp) using a constant dose and polymethylmethacrylate backscatter material. MOSFET and TLD comparative point‐dose measurements were performed on an anthropomorphic phantom that was exposed with a clinical CBCT protocol. The MOSFET single exposure low dose limit (25% uncertainty, k=2) was 1.69 mGy. An averaging of eight MOSFET exposures was required to attain the corresponding TLD (0.3 mGy) low‐dose limit. The sensitivity was 3.09±0.13 mV/mGy independently of the photon energy used. The MOSFET dosimeters did not present dose or dose rate sensitivity but, however, presented a 1% decrease of sensitivity per 1000 mV for accumulated threshold voltages between 8300 mV and 17500 mV. The point doses in an anthropomorphic phantom ranged for MOSFETs between 0.24 mGy and 2.29 mGy and for TLDs between 0.25 and 2.09 mGy, respectively. The mean difference was −8%. The MOSFET dosimeters presented statistically insignificant energy dependency. By averaging multiple exposures, the MOSFET dosimeters can achieve a TLD‐comparable low‐dose limit and constitute a feasible method for diagnostic dosimetry using anthropomorphic phantoms. However

  18. Performance analysis of commercial MOSFET packages in Class E converter operating at 2.56 MHz

    DEFF Research Database (Denmark)

    Nair, Unnikrishnan Raveendran; Munk-Nielsen, Stig; Jørgensen, Asger Bjørn

    2017-01-01

    resistance and high temperature operation over Si devices have aided in the paradigm shift towards wide bandgap devices. The low gate charge requirements of SiC MOSFETs enables use of these devices in radio frequency (RF) converters using resonant topologies operating at MHz frequency range. The RF...... are not commercially available and power modules have to be custom designed for these applications. This work demonstrates performance of various commercial MOSFET packages at frequency of 2.56 MHz. Commercial SiC MOSFETs in TO-247 and D2Pak packs are tested in Class E resonant converter operating at 2.56 MHz...

  19. Cyberknife Relative Output Factor measurements using fiber-coupled luminescence, MOSFETS and RADPOS dosimetry system

    DEFF Research Database (Denmark)

    Ploquin, N.; Kertzscher Schwencke, Gustavo Adolfo Vladimir; Vandervoort, E.

    2012-01-01

    from 5 to 60 mm. ROFs were also measured using a mobileMOSFET system (Best Medical Canada) and EBT1 and EBT2 GAFCHROMIC® (ISP, Ashland) radiochromic films. For cone sizes 12.5–60 mm all detector results were in agreement within the measurement uncertainty. The microMOSFET/RADPOS measurements (published.......3% and 0.865 ± 0.3% for 5, 7.5 and 10 mm cones. Our study shows that the microMOSFET/RADPOS and optical fiber‐coupled RL dosimetry system are well suited for Cyberknife cone output factors measurements over the entire range of field sizes, provided that appropriate correction factors are applied...

  20. MOSFET Switching Circuit Protects Shape Memory Alloy Actuators

    Science.gov (United States)

    Gummin, Mark A.

    2011-01-01

    A small-footprint, full surface-mount-component printed circuit board employs MOSFET (metal-oxide-semiconductor field-effect transistor) power switches to switch high currents from any input power supply from 3 to 30 V. High-force shape memory alloy (SMA) actuators generally require high current (up to 9 A at 28 V) to actuate. SMA wires (the driving element of the actuators) can be quickly overheated if power is not removed at the end of stroke, which can damage the wires. The new analog driver prevents overheating of the SMA wires in an actuator by momentarily removing power when the end limit switch is closed, thereby allowing complex control schemes to be adopted without concern for overheating. Either an integral pushbutton or microprocessor-controlled gate or control line inputs switch current to the actuator until the end switch line goes from logic high to logic low state. Power is then momentarily removed (switched off by the MOSFET). The analog driver is suited to use with nearly any SMA actuator.

  1. Hierarchical Approach to 'Atomistic' 3-D MOSFET Simulation

    Science.gov (United States)

    Asenov, Asen; Brown, Andrew R.; Davies, John H.; Saini, Subhash

    1999-01-01

    We present a hierarchical approach to the 'atomistic' simulation of aggressively scaled sub-0.1 micron MOSFET's. These devices are so small that their characteristics depend on the precise location of dopant atoms within them, not just on their average density. A full-scale three-dimensional drift-diffusion atomistic simulation approach is first described and used to verify more economical, but restricted, options. To reduce processor time and memory requirements at high drain voltage, we have developed a self-consistent option based on a solution of the current continuity equation restricted to a thin slab of the channel. This is coupled to the solution of the Poisson equation in the whole simulation domain in the Gummel iteration cycles. The accuracy of this approach is investigated in comparison to the full self-consistent solution. At low drain voltage, a single solution of the nonlinear Poisson equation is sufficient to extract the current with satisfactory accuracy. In this case, the current is calculated by solving the current continuity equation in a drift approximation only, also in a thin slab containing the MOSFET channel. The regions of applicability for the different components of this hierarchical approach are illustrated in example simulations covering the random dopant-induced threshold voltage fluctuations, threshold voltage lowering, threshold voltage asymmetry, and drain current fluctuations.

  2. On-current modeling of short-channel double-gate (DG) MOSFETs with a vertical Gaussian-like doping profile

    International Nuclear Information System (INIS)

    Dubey, Sarvesh; Jit, S.; Tiwari Pramod Kumar

    2013-01-01

    An analytic drain current model is presented for doped short-channel double-gate MOSFETs with a Gaussian-like doping profile in the vertical direction of the channel. The present model is valid in linear and saturation regions of device operation. The drain current variation with various device parameters has been demonstrated. The model is made more physical by incorporating the channel length modulation effect. Parameters like transconductance and drain conductance that are important in assessing the analog performance of the device have also been formulated. The model results are validated by numerical simulation results obtained by using the commercially available ATLAS™, a two dimensional device simulator from SILVACO. (semiconductor devices)

  3. Rational design of binder-free noble metal/metal oxide arrays with nanocauliflower structure for wide linear range nonenzymatic glucose detection

    KAUST Repository

    Li, Zhenzhen

    2015-06-12

    One-dimensional nanocomposites of metal-oxide and noble metal were expected to present superior performance for nonenzymatic glucose detection due to its good conductivity and high catalytic activity inherited from noble metal and metal oxide respectively. As a proof of concept, we synthesized gold and copper oxide (Au/CuO) composite with unique one-dimensional nanocauliflowers structure. Due to the nature of the synthesis method, no any foreign binder was needed in keeping either Au or CuO in place. To the best of our knowledge, this is the first attempt in combining metal oxide and noble metal in a binder-free style for fabricating nonenzymatic glucose sensor. The Au/CuO nanocauliflowers with large electrochemical active surface and high electrolyte contact area would promise a wide linear range and high sensitive detection of glucose with good stability and reproducibility due to its good electrical conductivity of Au and high electrocatalytic activity of CuO.

  4. Linear self-assembly and grafting of gold nanorods into arrayed micrometer-long nanowires on a silicon wafer via a combined top-down/bottom-up approach.

    Science.gov (United States)

    Lestini, Elena; Andrei, Codrin; Zerulla, Dominic

    2018-01-01

    Macroscopically long wire-like arrangements of gold nanoparticles were obtained by controlled evaporation and partial coalescence of an aqueous colloidal solution of capped CTAB-Au nanorods onto a functionalised 3-mercaptopropyl trimethoxysilane (MPTMS) silicon substrate, using a removable, silicon wafer with a hydrophobic surface that serves as a "handrail" for the initial nanorods' linear self-assembly. The wire-like structures display a quasi-continuous pattern by thermal annealing of the gold nanorods when the solvent (i.e. water) is evaporated at temperatures rising from 20°C to 140°C. Formation of both single and self-replicating parallel 1D-superstructures consisting of two or even three wires is observed and explained under such conditions.

  5. Superficial x-ray in-vivo dosimetry with MOSFET detectors

    International Nuclear Information System (INIS)

    Cheung, T.; Yu, P.K.N.; Butson, M.J.; Cancer Services, Wollongong, NSW

    2004-01-01

    Full text: This note investigates in-vivo dosimetry using a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) for radiotherapy treatment at superficial and orthovoltage x-ray energies. This was performed within one fraction of the patient's treatment. Standard measurements along with energy response of the detector are given. Results showed that the MOSFET measurements in-vivo agreed with calculated results on average within ± 5.6% over all superficial and orthovoltage energies. These variations were slightly larger than TLD results with variations between measured and calculated results being ± 5.0% for the same patient measurements. The MOSFET device provides adequate in-vivo dosimetry for superficial and orthovoltage energy treatments with the accuracy of the measurements seeming to be relatively on par with TLD in our case. The MOSFET does have the advantage of returning a relatively immediate dosimetric result after irradiation. Copyright (2004) Australasian College of Physical Scientists and Engineers in Medicine

  6. Study of strained-Si p-channel MOSFETs with HfO2 gate dielectric

    Science.gov (United States)

    Pradhan, Diana; Das, Sanghamitra; Dash, Tara Prasanna

    2016-10-01

    In this work, the transconductance of strained-Si p-MOSFETs with high-K dielectric (HfO2) as gate oxide, has been presented through simulation using the TCAD tool Silvaco-ATLAS. The results have been compared with a SiO2/strained-Si p-MOSFET device. Peak transconductance enhancement factors of 2.97 and 2.73 has been obtained for strained-Si p-MOSFETs in comparison to bulk Si channel p-MOSFETs with SiO2 and high-K dielectric respectively. This behavior is in good agreement with the reported experimental results. The transconductance of the strained-Si device at low temperatures has also been simulated. As expected, the mobility and hence the transconductance increases at lower temperatures due to reduced phonon scattering. However, the enhancements with high-K gate dielectric is less as compared to that with SiO2.

  7. The role of Energy Deposition in the Epitaxial Layer in Triggering SEGR in Power MOSFETs

    Science.gov (United States)

    Selva, L.; Swift, G.; Taylor, W.; Edmonds, L.

    1999-01-01

    In these SEGR experiments, three identical-oxide MOSFET types were irradiated with six ions of significantly different ranges. Results show the prime importance of the total energy deposited in the epitaxial layer.

  8. Characterization of microdose damage caused by single heavy ion observed in trench type power MOSFETs

    International Nuclear Information System (INIS)

    Ikeda, Naomi; Kuboyama, Satoshi; Maru, Akifumi; Tamura, Takashi; Hirao, Toshio; Abe, Hiroshi

    2010-01-01

    It was demonstrated that anomalously large degradation observed in power MOSFETs was caused by a single heavy ion. It was identified as a microdose effect and successfully characterized by several parameters extracted from experimental data. (author)

  9. Influence of ion beam energy on SEGR failure thresholds of vertical power MOSFETs

    International Nuclear Information System (INIS)

    Titus, J.L.; Wheatley, C.F.; Allenspach, M.; Schrimpf, R.D.; Brews, J.R.; Galloway, K.F.; Burton, D.I.; Pease, R.L.

    1996-01-01

    For the first time, experimental observations and numerical simulations show that the impact energy of the test ion influences the single-event gate rupture (SEGR) failure thresholds of vertical power MOSFETs. Current testing methodology may produce false hardness assurance

  10. Sensitivity of P-Channel MOSFET to X- and Gamma-Ray Irradiation

    Directory of Open Access Journals (Sweden)

    Milić Pejović

    2013-01-01

    Full Text Available Investigation of Al-gate p-channel MOSFETs sensitivity following irradiation using 200 and 280 kV X-ray beams as well as gamma-ray irradiation of 60Co in the dose range from 1 to 5 Gy was performed in this paper. The response followed on the basis of threshold voltage shift and was studied as a function of absorbed dose. It was shown that the most significant change in threshold voltage was in the case of MOSFET irradiation in X-ray fields of 200 kV and when the gate voltage was +5 V. For practical applications in dosimetry, the sensitivity of the investigated MOSFETs was also satisfactory for X-ray tube voltage of 280 kV and for gamma rays. Possible processes in gate oxide caused by radiation and its impact on the response of MOSFETs were also analyzed in this paper.

  11. Enhancement of Transistor-to-Transistor Variability Due to Total Dose Effects in 65-nm MOSFETs

    CERN Document Server

    Gerardin, S; Cornale, D; Ding, L; Mattiazzo, S; Paccagnella, A; Faccio, F; Michelis, S

    2015-01-01

    We studied device-to-device variations as a function of total dose in MOSFETs, using specially designed test structures and procedures aimed at maximizing matching between transistors. Degradation in nMOSFETs is less severe than in pMOSFETs and does not show any clear increase in sample-to-sample variability due to the exposure. At doses smaller than 1 Mrad( SiO2) variability in pMOSFETs is also practically unaffected, whereas at very high doses-in excess of tens of Mrad( SiO2)-variability in the on-current is enhanced in a way not correlated to pre-rad variability. The phenomenon is likely due to the impact of random dopant fluctuations on total ionizing dose effects.

  12. Analytical drift-current threshold voltage model of long-channel double-gate MOSFETs

    International Nuclear Information System (INIS)

    Shih, Chun-Hsing; Wang, Jhong-Sheng

    2009-01-01

    This paper presents a new, physical threshold voltage model to solve the ambiguity in determining the threshold voltage of double-gate (DG) MOSFETs. To avoid the difficulties of the conventional 2ψ B model in nearly undoped DG MOSFETs, this study proposes to define the on–off switching based on the actual roles of the drift and diffusion components in the total drain current. The drift current strongly enhances beyond the threshold voltage, while the diffusion current plays a major role in the subthreshold. The threshold voltage is defined as the drift component that exceeds the diffusion counterpart. From the solutions of Poisson's equation, the drift and diffusion currents of DG MOSFETs are separately formulated to derive the analytical expressions of the threshold voltage and associated threshold current. This model provides a comprehensive description of the switching behavior of DG MOSFET devices, and offers a physical onset threshold current to determine the threshold voltage in practical extraction

  13. Rapid Thermal Chemical Vapor Deposition for Dual-Gated Sub-100 nm MOSFET's

    National Research Council Canada - National Science Library

    Sturm, James

    2001-01-01

    ... (such as microprocessors and memory chips) is based. This project examines the scaling of MOSFET's to very small channel dimensions using a vertical structure which is defined by Rapid Thermal Chemical Vapor Deposition...

  14. Rapid Thermal Chemical Vapor Deposition for Dual-Gated Sub-100 nm MOSFET's

    National Research Council Canada - National Science Library

    Sturm, James

    2001-01-01

    .... The scaling of vertical p-channel MOSFET's with the source and drain doped with boron during low temperature epitaxy is limited by the diffusion of boron during subsequent side wall gate oxidation...

  15. MOSFET dosimetry in-vivo at superficial and orthovoltage x-ray energies

    International Nuclear Information System (INIS)

    Cheung, T.; Yu, P.K.N.; Butson, M.J.; Illawarra Cancer Care Centre, Wollongong, NSW

    2003-01-01

    This note investigates in-vivo dosimetry using a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) for radiotherapy treatment at superficial and orthovoltage x-ray energies. This was performed within one fraction of the patients treatment. Standard measurements along with energy response of the detector are given. Results showed that the MOSFET measurements in-vivo agreed with calculated results on average within ± 5.6% over all superficial and orthovoltage energies. These variations were slightly larger than TLD results with variations between measured and calculated results being ± 5.0% for the same patient measurements. The MOSFET device provides adequate in-vivo dosimetry for superficial and orthovoltage energy treatments with the accuracy of the measurements seeming to be relatively on par with TLD in our case. The MOSFET does have the advantage of returning a relatively immediate dosimetric result after irradiation. Copyright (2003) Australasian College of Physical Scientists and Engineers in Medicine

  16. Study of the electrical conductivity at finite temperature in 2D Si- MOSFETs

    Energy Technology Data Exchange (ETDEWEB)

    Limouny, L., E-mail: kaaouachi21@yahoo.fr; Kaaouachi, A. El, E-mail: kaaouachi21@yahoo.fr; Tata, O.; Daoudi, E.; Errai, M.; Dlimi, S. [Research Group ESNPS, Physics Department, University Ibn Zohr, Faculty of Sciences, B.P 8106, Hay Dakhla, 80000 Agadir (Morocco); Idrissi, H. El [Faculté des Sciences et Techniques de Mohammedia, Département de physique. B.P 146 Quartier Yasmina Mohammedia (Morocco); Zatni, A. [Laboratoire MSTI, Ecole Supérieure de Technologie d' Agadir, B.P: 33/S Agadir (Morocco)

    2014-01-27

    We investigate the low temperature density dependent conductivity of two dimensional electron systems in zero magnetic field for sample Si-15 MOSFETs. The first purpose of this paper is to establish that the knee of the conductivity σ{sub 0} (σ{sub 0} is the T = 0.3 conductivity obtained by linear extrapolation of the curves of σ (T) for different values of electron density, n{sub s}) as a function of the carrier densities n{sub s} for T = 0.3 K, observed by Lai et al. and Limouny et al. in previous work for two different samples, is independent of temperature. The second aim is the determination of the critical density, n{sub c}, of the metal-insulator transition. Many methods are used in this investigation of n{sub c} which have been already used for other samples. The motivation behind this last study is the observation of many values of n{sub c} that have been obtained from different methods and that are slightly different. We will use in this study three methods with the intention to infer which one is more appropriate to obtain n{sub c}.

  17. Development of MOS-FET based Marx generator with self-proved gate power

    International Nuclear Information System (INIS)

    Tokuchi, A.; Jiang, W.; Takayama, K.; Arai, T.; Kawakubo, T.; Adachi, T.

    2012-01-01

    New MOS-FET based Marx generator is described. An electric gate power for the MOS-FET is provided from the Marx main circuit itself. Four-stage Marx generator generates -12kV of the output voltage. The Marx Generator is successfully used to drive an Einzel lens chopper to generate a short pulsed ion beam for a KEK digital accelerator. (author)

  18. Switching transients in high-frequency high-power converters using power MOSFET's

    Science.gov (United States)

    Sloane, T. H.; Owen, H. A., Jr.; Wilson, T. G.

    1979-01-01

    The use of MOSFETs in a high-frequency high-power dc-to-dc converter is investigated. Consideration is given to the phenomena associated with the paralleling of MOSFETs and to the effect of stray circuit inductances on the converter circuit performance. Analytical relationships between various time constants during the turning-on and turning-off intervals are derived which provide estimates of plateau and peak levels during these intervals.

  19. Analytical V TH and S models for (DMG-GC-stack) surrounding-gate MOSFET

    Science.gov (United States)

    Aouaj, Abdellah; Bouziane, Ahmed; Nouaçry, Ahmed

    2012-01-01

    This article presents an analytical model of surface potential, threshold voltage and subthreshold swing for a new structure of surrounding-gate MOSFET by combining dual-material gate, graded channel and gate stack. By comparison with published results, it is shown that the new MOSFET structure can improve the immunity of CMOS-based devices in the nanoscale regime against short-channel effects.

  20. Model of hot-carrier induced degradation in ultra-deep sub-micrometer nMOSFET

    International Nuclear Information System (INIS)

    Lei Xiao-Yi; Liu Hong-Xia; Zhang Yue; Ma Xiao-Hua; Hao Yue

    2014-01-01

    The degradation produced by hot carrier (HC) in ultra-deep sub-micron n-channel metal oxide semiconductor field effect transistor (nMOSFET) has been analyzed in this paper. The generation of negatively charged interface states is the predominant mechanism for the ultra-deep sub-micron nMOSFET. According to our lifetime model of p-channel MOFET (pMOFET) that was reported in a previous publication, a lifetime prediction model for nMOSFET is presented and the parameters in the model are extracted. For the first time, the lifetime models of nMOFET and pMOSFET are unified. In addition, the model can precisely predict the lifetime of the ultra-deep sub-micron nMOSFET and pMOSFET. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  1. FEM-based linear inverse modeling using a 3D source array to image magma chambers with free geometry. Application to InSAR data from Rabaul Caldera (PNG).

    Science.gov (United States)

    Ronchin, Erika; Masterlark, Timothy; Dawson, John; Saunders, Steve; Martí Molist, Joan

    2015-04-01

    In this study, we present a method to fully integrate a family of finite element models (FEMs) into the regularized linear inversion of InSAR data collected at Rabaul caldera (PNG) between February 2007 and December 2010. During this period the caldera experienced a long-term steady subsidence that characterized surface movement both inside the caldera and outside, on its western side. The inversion is based on an array of FEM sources in the sense that the Green's function matrix is a library of forward numerical displacement solutions generated by the sources of an array common to all FEMs. Each entry of the library is the LOS surface displacement generated by injecting a unity mass of fluid, of known density and bulk modulus, into a different source cavity of the array for each FEM. By using FEMs, we are taking advantage of their capability of including topography and heterogeneous distribution of elastic material properties. All FEMs of the family share the same mesh in which only one source is activated at the time by removing the corresponding elements and applying the unity fluid flux. The domain therefore only needs to be discretized once. This precludes remeshing for each activated source, thus reducing computational requirements, often a downside of FEM-based inversions. Without imposing an a-priori source, the method allows us to identify, from a least-squares standpoint, a complex distribution of fluid flux (or change in pressure) with a 3D free geometry within the source array, as dictated by the data. The results of applying the proposed inversion to Rabaul InSAR data show a shallow magmatic system under the caldera made of two interconnected lobes located at the two opposite sides of the caldera. These lobes could be consistent with feeding reservoirs of the ongoing Tavuvur volcano eruption of andesitic products, on the eastern side, and of the past Vulcan volcano eruptions of more evolved materials, on the western side. The interconnection and

  2. Application of MOSFET detectors for dosimetry in small animal radiography using short exposure times.

    Science.gov (United States)

    De Lin, Ming; Toncheva, Greta; Nguyen, Giao; Kim, Sangroh; Anderson-Evans, Colin; Johnson, G Allan; Yoshizumi, Terry T

    2008-08-01

    Digital subtraction angiography (DSA) X-ray imaging for small animals can be used for functional phenotyping given its ability to capture rapid physiological changes at high spatial and temporal resolution. The higher temporal and spatial requirements for small-animal imaging drive the need for short, high-flux X-ray pulses. However, high doses of ionizing radiation can affect the physiology. The purpose of this study was to verify and apply metal oxide semiconductor field effect transistor (MOSFET) technology to dosimetry for small-animal diagnostic imaging. A tungsten anode X-ray source was used to expose a tissue-equivalent mouse phantom. Dose measurements were made on the phantom surface and interior. The MOSFETs were verified with thermoluminescence dosimeters (TLDs). Bland-Altman analysis showed that the MOSFET results agreed with the TLD results (bias, 0.0625). Using typical small animal DSA scan parameters, the dose ranged from 0.7 to 2.2 cGy. Application of the MOSFETs in the small animal environment provided two main benefits: (1) the availability of results in near real-time instead of the hours needed for TLD processes and (2) the ability to support multiple exposures with different X-ray techniques (various of kVp, mA and ms) using the same MOSFET. This MOSFET technology has proven to be a fast, reliable small animal dosimetry method for DSA imaging and is a good system for dose monitoring for serial and gene expression studies.

  3. Dose verification to cochlea during gamma knife radiosurgery of acoustic schwannoma using MOSFET dosimeter.

    Science.gov (United States)

    Sharma, Sunil D; Kumar, Rajesh; Akhilesh, Philomina; Pendse, Anil M; Deshpande, Sudesh; Misra, Basant K

    2012-01-01

    Dose verification to cochlea using metal oxide semiconductor field effect transistor (MOSFET) dosimeter using a specially designed multi slice head and neck phantom during the treatment of acoustic schwannoma by Gamma Knife radiosurgery unit. A multi slice polystyrene head phantom was designed and fabricated for measurement of dose to cochlea during the treatment of the acoustic schwannoma. The phantom has provision to position the MOSFET dosimeters at the desired location precisely. MOSFET dosimeters of 0.2 mm x 0.2 mm x 0.5 μm were used to measure the dose to the cochlea. CT scans of the phantom with MOSFETs in situ were taken along with Leksell frame. The treatment plans of five patients treated earlier for acoustic schwannoma were transferred to the phantom. Dose and coordinates of maximum dose point inside the cochlea were derived. The phantom along with the MOSFET dosimeters was irradiated to deliver the planned treatment and dose received by cochlea were measured. The treatment planning system (TPS) estimated and measured dose to the cochlea were in the range of 7.4 - 8.4 Gy and 7.1 - 8 Gy, respectively. The maximum variation between TPS calculated and measured dose to cochlea was 5%. The measured dose values were found in good agreement with the dose values calculated using the TPS. The MOSFET dosimeter can be a suitable choice for routine dose verification in the Gamma Knife radiosurgery.

  4. Analysis of the Degradation of MOSFETs in Switching Mode Power Supply by Characterizing Source Oscillator Signals

    Directory of Open Access Journals (Sweden)

    Xueyan Zheng

    2013-01-01

    Full Text Available Switching Mode Power Supply (SMPS has been widely applied in aeronautics, nuclear power, high-speed railways, and other areas related to national strategy and security. The degradation of MOSFET occupies a dominant position in the key factors affecting the reliability of SMPS. MOSFETs are used as low-voltage switches to regulate the DC voltage in SMPS. The studies have shown that die-attach degradation leads to an increase in on-state resistance due to its dependence on junction temperature. On-state resistance is the key indicator of the health of MOSFETs. In this paper, an online real-time method is presented for predicting the degradation of MOSFETs. First, the relationship between an oscillator signal of source and on-state resistance is introduced. Because oscillator signals change when they age, a feature is proposed to capture these changes and use them as indicators of the state of health of MOSFETs. A platform for testing characterizations is then established to monitor oscillator signals of source. Changes in oscillator signal measurement were observed with aged on-state resistance as a result of die-attach degradation. The experimental results demonstrate that the method is efficient. This study will enable a method to predict the failure of MOSFETs to be developed.

  5. SU-F-T-474: Evaluation of Dose Perturbation, Temperature and Sensitivity Variation With Accumulated Dose of MOSFET Detector

    Energy Technology Data Exchange (ETDEWEB)

    Ganesan, B; Prakasarao, A; Singaravelu, G [Anna University, Chennai, TamilNadu (India); Palraj, T; Rai, R [Dr. Rai Memorial Cancer Institute, Chennai, TamilNadu (India)

    2016-06-15

    Purpose: The use of mega voltage gamma and x-ray sources with their skin sparring qualities in radiation therapy has been a boon in relieving patient discomfort and allowing high tumor doses to be given with fewer restrictions due to radiation effects in the skin. However, high doses given to deep tumors may require careful consideration of dose distribution in the buildup region in order to avoid irreparable damage to the skin. Methods: To measure the perturbation of MOSFET detector in Co60,6MV and 15MV the detector was placed on the surface of the phantom covered with the brass build up cap. To measure the effect of temperature the MOSFET detector was kept on the surface of hot water polythene container and the radiation was delivere. In order to measure the sensitivity variation with accumulated dose Measurements were taken by delivering the dose of 200 cGy to MOSFET until the MOSFET absorbed dose comes to 20,000 cGy Results: the Measurement was performed by positioning the bare MOSFET and MOSFET with brass build up cap on the top surface of the solid water phantom for various field sizes in order to find whether there is any attenuation caused in the dose distribution. The response of MOSFET was monitored for temperature ranging from 42 degree C to 22 degree C. The integrated dose dependence of MOSFET dosimeter sensitivity over different energy is not well characterized. This work investigates the dual-bias MOSFET dosimeter sensitivity response to 6 MV and 15 MV beams. Conclusion: From this study it is observed that unlike diode, bare MOSFET does not perturb the radiation field.. It is observed that the build-up influences the temperature dependency of MOSFET and causes some uncertainty in the readings. In the case of sensitivity variation with accumulated dose MOSFET showed higher sensitivity with dose accumulation for both the energies.

  6. SU-F-T-474: Evaluation of Dose Perturbation, Temperature and Sensitivity Variation With Accumulated Dose of MOSFET Detector

    International Nuclear Information System (INIS)

    Ganesan, B; Prakasarao, A; Singaravelu, G; Palraj, T; Rai, R

    2016-01-01

    Purpose: The use of mega voltage gamma and x-ray sources with their skin sparring qualities in radiation therapy has been a boon in relieving patient discomfort and allowing high tumor doses to be given with fewer restrictions due to radiation effects in the skin. However, high doses given to deep tumors may require careful consideration of dose distribution in the buildup region in order to avoid irreparable damage to the skin. Methods: To measure the perturbation of MOSFET detector in Co60,6MV and 15MV the detector was placed on the surface of the phantom covered with the brass build up cap. To measure the effect of temperature the MOSFET detector was kept on the surface of hot water polythene container and the radiation was delivere. In order to measure the sensitivity variation with accumulated dose Measurements were taken by delivering the dose of 200 cGy to MOSFET until the MOSFET absorbed dose comes to 20,000 cGy Results: the Measurement was performed by positioning the bare MOSFET and MOSFET with brass build up cap on the top surface of the solid water phantom for various field sizes in order to find whether there is any attenuation caused in the dose distribution. The response of MOSFET was monitored for temperature ranging from 42 degree C to 22 degree C. The integrated dose dependence of MOSFET dosimeter sensitivity over different energy is not well characterized. This work investigates the dual-bias MOSFET dosimeter sensitivity response to 6 MV and 15 MV beams. Conclusion: From this study it is observed that unlike diode, bare MOSFET does not perturb the radiation field.. It is observed that the build-up influences the temperature dependency of MOSFET and causes some uncertainty in the readings. In the case of sensitivity variation with accumulated dose MOSFET showed higher sensitivity with dose accumulation for both the energies.

  7. SiC MOSFET Switching Power Amplifier Project Summary

    Science.gov (United States)

    Miller, Kenneth E.; Ziemba, Timothy; Prager, James; Slobodov, Ilia; Henson, Alex

    2017-10-01

    Eagle Harbor Technologies has completed a Phase I/II program to develop SiC MOSFET based Switching Power Amplifiers (SPA) for precision magnet control in fusion science applications. During this program, EHT developed several units have been delivered to the Helicity Injected Torus (HIT) experiment at the University of Washington to drive both the voltage and flux circuits of the helicity injectors. These units are capable of switching 700 V at 100 kHz with an adjustable duty cycle from 10 - 90% and a combined total output current of 96 kA for 4 ms (at max current). The SPAs switching is controlled by the microcontroller at HIT, which adjusts the duty cycle to maintain a specific waveform in the injector. The SPAs include overcurrent and shoot-through protection circuity. EHT will present an overview of the program including final results for the SPA waveforms. With support of DOE SBIR.

  8. Assessment of Global Variability in UTBB MOSFETs in Subthreshold Regime

    Directory of Open Access Journals (Sweden)

    Sergej Makovejev

    2014-07-01

    Full Text Available The global variability of ultra-thin body and buried oxide (UTBB MOSFETs in subthreshold and off regimes of operation is analyzed. The variability of the off-state drain current, subthreshold slope, drain-induced barrier lowering (DIBL, gate leakage current, threshold voltage and their correlations are considered. Two threshold voltage extraction techniques were used. It is shown that the transconductance over drain current (gm/Id method is preferable for variability studies. It is demonstrated that the subthreshold drain current variability in short channel devices cannot be described by threshold voltage variability. It is suggested to include the effective body factor incorporating short channel effects in order to properly model the subthreshold drain current variability.

  9. Dopant profile engineering of advanced Si MOSFET's using ion implantation

    International Nuclear Information System (INIS)

    Stolk, P.A.; Ponomarev, Y.V.; Schmitz, J.; Brandenburg, A.C.M.C. van; Roes, R.; Montree, A.H.; Woerlee, P.H.

    1999-01-01

    Ion implantation has been used to realize non-uniform, steep retrograde (SR) dopant profiles in the active channel region of advanced Si MOSFET's. After defining the transistor configuration, SR profiles were formed by dopant implantation through the polycrystalline Si gate and the gate oxide (through-the-gate, TG, implantation). The steep nature of the as-implanted profile was retained by applying rapid thermal annealing for dopant activation and implantation damage removal. For NMOS transistors, TG implantation of B yields improved transistor performance through increased carrier mobility, reduced junction capacitances, and reduced susceptibility to short-channel effects. Electrical measurements show that the gate oxide quality is not deteriorated by the ion-induced damage, demonstrating that transistor reliability is preserved. For PMOS transistors, TG implantation of P or As leads to unacceptable source/drain junction broadening as a result of transient enhanced dopant diffusion during thermal activation

  10. 2D Quantum Mechanical Study of Nanoscale MOSFETs

    Science.gov (United States)

    Svizhenko, Alexei; Anantram, M. P.; Govindan, T. R.; Biegel, B.; Kwak, Dochan (Technical Monitor)

    2000-01-01

    With the onset of quantum confinement in the inversion layer in nanoscale MOSFETs, behavior of the resonant level inevitably determines all device characteristics. While most classical device simulators take quantization into account in some simplified manner, the important details of electrostatics are missing. Our work addresses this shortcoming and provides: (a) a framework to quantitatively explore device physics issues such as the source-drain and gate leakage currents, DIBL, and threshold voltage shift due to quantization, and b) a means of benchmarking quantum corrections to semiclassical models (such as density-gradient and quantum-corrected MEDICI). We have developed physical approximations and computer code capable of realistically simulating 2-D nanoscale transistors, using the non-equilibrium Green's function (NEGF) method. This is the most accurate full quantum model yet applied to 2-D device simulation. Open boundary conditions and oxide tunneling are treated on an equal footing. Electrons in the ellipsoids of the conduction band are treated within the anisotropic effective mass approximation. We present the results of our simulations of MIT 25, 50 and 90 nm "well-tempered" MOSFETs and compare them to those of classical and quantum corrected models. The important feature of quantum model is smaller slope of Id-Vg curve and consequently higher threshold voltage. Surprisingly, the self-consistent potential profile shows lower injection barrier in the channel in quantum case. These results are qualitatively consistent with ID Schroedinger-Poisson calculations. The effect of gate length on gate-oxide leakage and subthreshold current has been studied. The shorter gate length device has an order of magnitude smaller current at zero gate bias than the longer gate length device without a significant trade-off in on-current. This should be a device design consideration.

  11. Comparison between Si/SiO_2 and InP/Al_2O_3 based MOSFETs

    International Nuclear Information System (INIS)

    Akbari Tochaei, A.; Arabshahi, H.; Benam, M. R.; Vatan-Khahan, A.; Abedininia, M.

    2016-01-01

    Electron transport properties of InP-based MOSFET as a new channel material with Al_2O_3 as a high-k dielectric oxide layer in comparison with Si-based MOSFET are studied by the ensemble Monte Carlo simulation method in which the conduction band valleys in InP are based on three valley models with consideration of quantum effects (effective potential approach). I_d–V_d characteristics for Si-based MOSFET are in good agreement with theoretical and experimental results. Our results show that I_d of InP-based MOSFET is about 2 times that of Si-based MOSFET. We simulated the diagrams of longitudinal and transverse electric fields, conduction band edge, average electron velocity, and average electron energy for Si-based MOSFET and compared the results with those for InP-based MOSFET. Our results, as was expected, show that the transverse electric field, the conduction band edge, the electron velocity, and the electron energy in a channel in the InP-based MOSFET are greater than those for Si-based MOSFET. But the longitudinal electric field behaves differently at different points of the channel.

  12. Comparative study on skin dose measurement using MOSFET and TLD for pediatric patients with acute lymphatic leukemia.

    Science.gov (United States)

    Al-Mohammed, Huda I; Mahyoub, Fareed H; Moftah, Belal A

    2010-07-01

    The object of this study was to compare the difference of skin dose measured in patients with acute lymphatic leukemia (ALL) treated with total body irradiation (TBI) using metal oxide semiconductor field-effect transistors (mobile MOSFET dose verification system (TN-RD-70-W) and thermoluminescent dosimeters (TLD-100 chips, Harshaw/ Bicron, OH, USA). Because TLD has been the most-commonly used technique in the skin dose measurement of TBI, the aim of the present study is to prove the benefit of using the mobile MOSFET (metal oxide semiconductor field effect transistor) dosimeter, for entrance dose measurements during the total body irradiation (TBI) over thermoluminescent dosimeters (TLD). The measurements involved 10 pediatric patients ages between 3 and 14 years. Thermoluminescent dosimeters and MOSFET dosimetry were performed at 9 different anatomic sites on each patient. The present results show there is a variation between skin dose measured with MOSFET and TLD in all patients, and for every anatomic site selected, there is no significant difference in the dose delivered using MOSFET as compared to the prescribed dose. However, there is a significant difference for every anatomic site using TLD compared with either the prescribed dose or MOSFET. The results indicate that the dosimeter measurements using the MOSFET gave precise measurements of prescribed dose. However, TLD measurement showed significant increased skin dose of cGy as compared to either prescribed dose or MOSFET group. MOSFET dosimeters provide superior dose accuracy for skin dose measurement in TBI as compared with TLD.

  13. Angular dependence of the MOSFET dosimeter and its impact on in vivo surface dose measurement in breast cancer treatment.

    Science.gov (United States)

    Qin, S; Chen, T; Wang, L; Tu, Y; Yue, N; Zhou, J

    2014-08-01

    The focus of this study is the angular dependence of two types of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) dosimeters (MOSFET20 and OneDose/OneDosePlus) when used for surface dose measurements. External beam radiationat different gantry angles were delivered to a cubic solid water phantom with a MOSFET placed on the top surface at CAX. The long axis of the MOSFET was oriented along the gantry axis of rotation, with the dosimeter (bubble side) facing the radiation source. MOSFET-measured surface doses were compared against calibrated radiochromic film readings. It was found that both types of MOSFET dosimeters exhibited larger than previously reported angular dependence when measuring surface dose in beams at large oblique angles. For the MOSFET20 dosimeter the measured surface dose deviation against film readings was as high as 17% when the incident angle was 72 degrees to the norm of the phantom surface. It is concluded that some MOSFET dosimeters may have a strong angular dependence when placed on the surface of water-equivalent material, even though they may have an isotropic angular response when surrounded by uniform medium. Extra on-surface calibration maybe necessary before using MOSFET dosimeters for skin dose measurement in tangential fields.

  14. Field isolation for GaN MOSFETs on AlGaN/GaN heterostructure with boron ion implantation

    International Nuclear Information System (INIS)

    Jiang, Y; Wang, Q P; Wang, D J; Tamai, K; Li, L A; Ao, J-P; Ohno, Y; Shinkai, S; Miyashita, T; Motoyama, S-I

    2014-01-01

    We report the investigation of boron ion implantation as a device field isolation process for GaN metal-oxide-semiconductor field-effect transistors (MOSFETs) on AlGaN/GaN heterostructure. In the mesa isolation region of a bar-type MOSFET, a parasitic MOS-channel existed and widened the designed channel width, which would result in an overestimated mobility compared with a ring-type MOSFET. After boron ions implantation in the isolation region, the overestimation of field-effect mobility of bar-type MOSFETs was eliminated. The sub-threshold characteristics and on-state drain current of the bar-type MOSFETs coincide with the ring-type devices. Long-channel ring-type MOSFETs, with and without ion implantation, were fabricated on the recess region to evaluate the sub-threshold characteristics. The MOSFETs with boron ions implanted into the recess region showed a low drain current up to the gate bias of 10V. The result indicated that boron ion implantation prevented the formation of parasitic MOS-channel in the isolation region and achieved field isolation. The current–voltage characteristics of MOSFETs with the normal recess condition demonstrated no degradation of device performance after boron ions implanted into the isolation region. Boron ion implantation by further optimization can be a field isolation method for GaN MOSFETs. (paper)

  15. TH-AB-BRA-06: MOSFET-Based Dosimetry in An MR Image-Guided Radiation Therapy System: Comparison with and Without a Static 0.3T Magnetic Field

    Energy Technology Data Exchange (ETDEWEB)

    Cammin, J; Curcuru, A; Li, H; Mutic, S; Green, O [Washington University School of Medicine, St. Louis, MO (United States)

    2016-06-15

    Purpose: To compare depth-dose and surface-dose measurements without and with the magnetic field in a 0.3T MR image-guided Co-60 treatment unit using MOSFET dosimeters. Methods: MOSFET dosimeters (Best Medical Canada, model TN-502RDH-10) were placed in a solid water phantom at 5cm depth with 8cm backscatter (with the MOSFET wires in different orientations to the couch long axis) and also on the surface of an 8cm solid water phantom. The phantoms were placed in an MR image-guided Co-60 treatment machine at an SAD of 105cm to the MOSFETs. Dose measurements were performed between 50 and 200cGy at 5cm depth in a 10.5cm × 10.5cm radiation field without the magnetic field (during a machine maintenance period) and with the nominal magnetic field of 0.3T. The dose linearity was measured at 5cm depth with an orthogonal field and the angular dose dependence was measured on the surface with an orthogonal field and oblique fields at +60 degrees and −60 degrees. Results: The measured MOSFET readings at 5cm depth were linear with dose with slopes of (2.97 +/− 0.01) mV/cGy and (3.01 +/− 0.02) mV/cGy without and with the magnetic field, respectively. No statistically significant difference was found. The surface dose measurements, however, were lower by 6.4% for the AP field (2.3 σ) with magnetic field, 4.9% for the −60 degree field (1.4 σ), and 0.4% different for the +60 degree field (0.2 σ). Conclusion: There is no statistically significant difference in the dose at depth without and with the magnetic field and different orientations of the MOSFET wires. There is a statistically significant difference for the surface dose due to the influence of the magnetic field on secondary electrons from head-scatter and the build-up region in certain field orientations. Clinical surface-dose dosimetry in a magnetic field should apply asymmetric angle-dependent corrections.

  16. Comparison of Single-Particle Monte Carlo Simulation with Measured Output Characteristics of an 0.1µm n-MOSFET

    Directory of Open Access Journals (Sweden)

    F. M. Bufler

    2002-01-01

    Full Text Available A comparison between non-selfconsistent single-particle Monte Carlo (MC simulations and measurements of the output characteristics of an 0.1 µm n-MOSFET is presented. First the bulk MC model, which features a new simplified treatment of inelastic acoustic intravalley scattering, is validated by comparison with experimental literature data for mobilities and velocities. The dopant distribution of the MOSFET is obtained from a 2D process simulation, which is calibrated with SIMS and electrical measurements and fine-tuned by a comparison of the measured transfer characteristics in the subthreshold regime with a coupled Schro¨dinger drift-diffusion (DD simulation. Then the quantum effect is replaced by a shift of the work function and the DD, hydrodynamic (HD and MC models are adjusted to reproduce the measured drain current in the linear regime. The results of the three models in the non-linear regime are compared without further adjustment to the measured output characteristics. While good agreement is found for the MC model, the on-current is significantly overestimated by the HD model and underestimated by the DD model.

  17. Sensor array signal processing

    CERN Document Server

    Naidu, Prabhakar S

    2009-01-01

    Chapter One: An Overview of Wavefields 1.1 Types of Wavefields and the Governing Equations 1.2 Wavefield in open space 1.3 Wavefield in bounded space 1.4 Stochastic wavefield 1.5 Multipath propagation 1.6 Propagation through random medium 1.7 ExercisesChapter Two: Sensor Array Systems 2.1 Uniform linear array (ULA) 2.2 Planar array 2.3 Distributed sensor array 2.4 Broadband sensor array 2.5 Source and sensor arrays 2.6 Multi-component sensor array2.7 ExercisesChapter Three: Frequency Wavenumber Processing 3.1 Digital filters in the w-k domain 3.2 Mapping of 1D into 2D filters 3.3 Multichannel Wiener filters 3.4 Wiener filters for ULA and UCA 3.5 Predictive noise cancellation 3.6 Exercises Chapter Four: Source Localization: Frequency Wavenumber Spectrum4.1 Frequency wavenumber spectrum 4.2 Beamformation 4.3 Capon's w-k spectrum 4.4 Maximum entropy w-k spectrum 4.5 Doppler-Azimuth Processing4.6 ExercisesChapter Five: Source Localization: Subspace Methods 5.1 Subspace methods (Narrowband) 5.2 Subspace methods (B...

  18. An Updated Perspective of Single Event Gate Rupture and Single Event Burnout in Power MOSFETs

    Science.gov (United States)

    Titus, Jeffrey L.

    2013-06-01

    Studies over the past 25 years have shown that heavy ions can trigger catastrophic failure modes in power MOSFETs [e.g., single-event gate rupture (SEGR) and single-event burnout (SEB)]. In 1996, two papers were published in a special issue of the IEEE Transaction on Nuclear Science [Johnson, Palau, Dachs, Galloway and Schrimpf, “A Review of the Techniques Used for Modeling Single-Event Effects in Power MOSFETs,” IEEE Trans. Nucl. Sci., vol. 43, no. 2, pp. 546-560, April. 1996], [Titus and Wheatley, “Experimental Studies of Single-Event Gate Rupture and Burnout in Vertical Power MOSFETs,” IEEE Trans. Nucl. Sci., vol. 43, no. 2, pp. 533-545, Apr. 1996]. Those two papers continue to provide excellent information and references with regard to SEB and SEGR in vertical planar MOSFETs. This paper provides updated references/information and provides an updated perspective of SEB and SEGR in vertical planar MOSFETs as well as provides references/information to other device types that exhibit SEB and SEGR effects.

  19. Fabrication of pseudo-spin-MOSFETs using a multi-project wafer CMOS chip

    Science.gov (United States)

    Nakane, R.; Shuto, Y.; Sukegawa, H.; Wen, Z. C.; Yamamoto, S.; Mitani, S.; Tanaka, M.; Inomata, K.; Sugahara, S.

    2014-12-01

    We demonstrate monolithic integration of pseudo-spin-MOSFETs (PS-MOSFETs) using vendor-made MOSFETs fabricated in a low-cost multi-project wafer (MPW) product and lab-made magnetic tunnel junctions (MTJs) formed on the topmost passivation film of the MPW chip. The tunneling magnetoresistance (TMR) ratio of the fabricated MTJs strongly depends on the surface roughness of the passivation film. Nevertheless, after the chip surface was atomically flattened by SiO2 deposition on it and successive chemical-mechanical polish (CMP) process for the surface, the fabricated MTJs on the chip exhibits a sufficiently large TMR ratio (>140%) adaptable to the PS-MOSFET application. The implemented PS-MOSFETs show clear modulation of the output current controlled by the magnetization configuration of the MTJs, and a maximum magnetocurrent ratio of 90% is achieved. These magnetocurrent behaviour is quantitatively consistent with those predicted by HSPICE simulations. The developed integration technique using a MPW CMOS chip would also be applied to monolithic integration of CMOS devices/circuits and other various functional devices/materials, which would open the door for exploring CMOS-based new functional hybrid circuits.

  20. Extra source implantation for suppression floating-body effect in partially depleted SOI MOSFETs

    International Nuclear Information System (INIS)

    Chen Jing; Luo Jiexin; Wu Qingqing; Chai Zhan; Huang Xiaolu; Wei Xing; Wang Xi

    2012-01-01

    Silicon-on-insulate (SOI) MOSFETs offer benefits over bulk competitors for fully isolation and smaller junction capacitance. The performance of partially depleted (PD) SOI MOSFETs, though, is not good enough. Since the body is floating, the extra holes (for nMOSFETs) in this region accumulate, causing body potential arise, which of course degrades the performance of the device. How to suppress the floating-body effect becomes critical. There are mainly two ways for the goal. One is to employ body-contact structures, and the other SiGe source/drain structures. However, the former consumes extra area, not welcomed in the state-of-the-art chips design. The latter is not compatible with the traditional CMOS technology. Finding a structure both saving area and compatible technology is the most urgent for PD SOI MOSFETs. Recently, we have developed a new structure with extra heavy boron implantation in the source region for PD SOI nMOSFETs. It consumes no extra area and is also compatible with CMOS technology. The device is found to be free of kink effect in simulation, which implies the floating-body effect is greatly suppressed. In addition, the mechanisms of the kink-free, as well as the impact of different implanting conditions are interpreted.

  1. Real Time In-circuit Condition Monitoring of MOSFET in Power Converters

    Directory of Open Access Journals (Sweden)

    Shakeb A. Khan

    2015-03-01

    Full Text Available Abstract:This paper presents simple and low-cost, real time in-circuit condition monitoring of MOSFET in power electronic converters. Design metrics requirements like low cost, small size, high power factor, low percentage of total harmonic distortion etc. requires the power electronic systems to operate at high frequencies and at high power density. Failures of power converters are attributed largely by aging of power MOSFETs at high switching frequencies. Therefore, real time in-circuit prognostic of MOSFET needs to be done before their selection for power system design. Accelerated aging tests are performed in different circuits to determine the wear out failure of critical components based on their parametric degradation. In this paper, the simple and low-cost test beds are designed for real time in-circuit prognostics of power MOSFETs. The proposed condition monitoring scheme helps in estimating the condition of MOSFETs at their maximum rated operating condition and will aid the system designers to test their reliability and benchmark them before selecting in power converters.

  2. Analysis and Comprehensive Analytical Modeling of Statistical Variations in Subthreshold MOSFET's High Frequency Characteristics

    Directory of Open Access Journals (Sweden)

    Rawid Banchuin

    2014-01-01

    Full Text Available In this research, the analysis of statistical variations in subthreshold MOSFET's high frequency characteristics defined in terms of gate capacitance and transition frequency, have been shown and the resulting comprehensive analytical models of such variations in terms of their variances have been proposed. Major imperfection in the physical level properties including random dopant fluctuation and effects of variations in MOSFET's manufacturing process, have been taken into account in the proposed analysis and modeling. The up to dated comprehensive analytical model of statistical variation in MOSFET's parameter has been used as the basis of analysis and modeling. The resulting models have been found to be both analytic and comprehensive as they are the precise mathematical expressions in terms of physical level variables of MOSFET. Furthermore, they have been verified at the nanometer level by using 65~nm level BSIM4 based benchmarks and have been found to be very accurate with smaller than 5 % average percentages of errors. Hence, the performed analysis gives the resulting models which have been found to be the potential mathematical tool for the statistical and variability aware analysis and design of subthreshold MOSFET based VHF circuits, systems and applications.

  3. Effect on the insulation material of a MOSFET device submitted to a standard diagnostic radiation beam

    International Nuclear Information System (INIS)

    De Magalhaes, C M S; Dos Santos, L A P; Souza, D do N; Maia, A F

    2010-01-01

    MOSFET electronic devices have been used for dosimetry in radiology and radiotherapy. Several communications show that due to the radiation exposure defects appear on the semiconductor crystal lattice. Actually, the structure of a MOSFET consists of three materials: a semiconductor, a metal and an insulator between them. The MOSFET is a quadripolar device with a common terminal: gate-source is the input; drain-source is the output. The gate controls the electrical current passing through semiconductor medium by the field effect because the silicon oxide acts as insulating material. The proposal of this work is to show some radiation effects on the insulator of a MOSFET device. A 6430 Keithley sub-femtoamp SourceMeter was used to verify how the insulating material layer in the structure of the device varies with the radiation exposure. We have used the IEC 61267 standard radiation X-ray beams generated from a Pantak industrial unit in the radiation energy range of computed tomography. This range was chosen because we are using the MOSFET device as radiation detector for dosimetry in computed tomography. The results showed that the behaviour of the electrical current of the device is different in the insulator and semiconductor structures.

  4. High performance multi-finger MOSFET on SOI for RF amplifiers

    Science.gov (United States)

    Adhikari, M. Singh; Singh, Y.

    2017-10-01

    In this paper, we propose structural modifications in the conventional planar metal-oxide-semiconductor field-effect transistor (MOSFET) on silicon-on-insulator by utilizing trenches in the epitaxial layer. The proposed multi-finger MOSFET (MF-MOSFET) has dual vertical-gates placed in separate trenches to form multiple channels in the p-base which carry the drain current in parallel. The proposed device uses TaN as gate electrode and SiO2 as gate dielectric. Simultaneous conduction of multiple channels enhances the drain current (ID) and provides higher transconductance (gm) leading to significant improvement in cut-off frequency (ft). Two-dimensional simulations are performed to evaluate and compare the performance of the MF-MOSFET with the conventional MOSFET. At a gate length of 60 nm, the proposed device provides 4 times higher ID, 3 times improvement in gm and 1.25 times increase in ft with better control over the short channel effects as compared with the conventional device.

  5. Modular Matrix Multiplication on a Linear Array.

    Science.gov (United States)

    1983-11-01

    is fl(n2). 2 Case e Irl __ (see Figure 5.2) 2 2 ,1 Y, " X2v- ’ Y2 -. x= -- ~ Y4 "i; Yin Figure 5Ŗ At t--xi, either all Gk, such that IkEA , have n...nat and Image Proceuing, IEEE Transactions on Computers, Vol. C-31, No. 10 22 (October, 1982), pp. IO0oo09. [41 H.T. Kung, Let’s Design Algorithms for...VLSI Systems, Proc. Caltech Conf. on Very Large Scale Integration: Architecture, Design , Fabrication (January, 1979), pp. 65. 90. 151 H.T. Kung, and

  6. Single halo SDODEL n-MOSFET: an alternative low-cost pseudo-SOI with better analog performance

    Science.gov (United States)

    Sarkar, Partha; Mallik, Abhijit; Sarkar, Chandan Kumar

    2009-03-01

    In this paper, with the help of extensive TCAD simulations, we investigate the analog performance of source/drain on depletion layer (SDODEL) MOSFETs with a single-halo (SH) implant near the source side of the channel. We use the SH implant in such a structure for the first time. The analog performance parameters in SH SDODEL MOSFETs are compared to those in SH MOSFETs as well as in SH SOI MOSFETs. In addition to reduced junction capacitance for the SH SDODEL structure as compared to that in bulk SH devices, it has been shown that such devices lead to improved performance and lower power dissipation for sub-100 nm CMOS technologies. Our results show that, in SH SDODEL MOSFETs, there is significant improvement in the intrinsic device performance for analog applications (such as device gain, gm/ID, etc) for the sub-100 nm technologies.

  7. A two-dimensional analytical subthreshold behavior model for junctionless dual-material cylindrical surrounding-gate MOSFETs

    International Nuclear Information System (INIS)

    Li Cong; Zhuang Yi-Qi; Zhang Li; Jin Gang

    2014-01-01

    A two-dimensional analytical subthreshold behavior model for junctionless dual-material cylindrical surrounding-gate (JLDMCSG) metal-oxide-semiconductor field-effect transistors (MOSFETs) is proposed. It is derived by solving the two-dimensional Poisson's equation in two continuous cylindrical regions with any simplifying assumption. Using this analytical model, the subthreshold characteristics of JLDMCSG MOSFETs are investigated in terms of channel electrostatic potential, horizontal electric field, and subthreshold current. Compared to junctionless single-material cylindrical surrounding-gate MOSFETs, JLDMCSG MOSFETs can effectively suppress short-channel effects and simultaneously improve carrier transport efficiency. It is found that the subthreshold current of JLDMCSG MOSFETs can be significantly reduced by adopting both a thin oxide and thin silicon channel. The accuracy of the analytical model is verified by its good agreement with the three-dimensional numerical simulator ISE TCAD

  8. Single halo SDODEL n-MOSFET: an alternative low-cost pseudo-SOI with better analog performance

    International Nuclear Information System (INIS)

    Sarkar, Partha; Mallik, Abhijit; Sarkar, Chandan Kumar

    2009-01-01

    In this paper, with the help of extensive TCAD simulations, we investigate the analog performance of source/drain on depletion layer (SDODEL) MOSFETs with a single-halo (SH) implant near the source side of the channel. We use the SH implant in such a structure for the first time. The analog performance parameters in SH SDODEL MOSFETs are compared to those in SH MOSFETs as well as in SH SOI MOSFETs. In addition to reduced junction capacitance for the SH SDODEL structure as compared to that in bulk SH devices, it has been shown that such devices lead to improved performance and lower power dissipation for sub-100 nm CMOS technologies. Our results show that, in SH SDODEL MOSFETs, there is significant improvement in the intrinsic device performance for analog applications (such as device gain, g m /I D , etc) for the sub-100 nm technologies

  9. Simulations of backgate sandwich nanowire MOSFETs with improved device performance

    International Nuclear Information System (INIS)

    Zhao Hengliang; Zhu Huilong; Zhong Jian; Ma Xiaolong; Wei Xing; Zhao Chao; Chen Dapeng; Ye Tianchun

    2014-01-01

    We propose a novel backgate sandwich nanowire MOSFET (SNFET), which offers the advantages of ETSOI (dynamic backgate voltage controllability) and nanowire FETs (good short channel effect). A backgate is used for threshold voltage (V t ) control of the SNFET. Compared with a backgate FinFET with a punch-through stop layer (PTSL), the SNFET possesses improved device performance. 3D device simulations indicate that the SNFET has a three times larger overdrive current, a ∼75% smaller off leakage current, and reduced subthreshold swing (SS) and DIBL than those of a backgate FinFET when the nanowire (NW) and the fin are of equal width. A new process flow to fabricate the backgate SNFET is also proposed in this work. Our analytical model suggests that V t control by the backgate can be attributed to the capacitances formed by the frontgate, NW, and backgate. The SNFET devices are compatible with the latest state-of-the-art high-k/metal gate CMOS technology with the unique capability of independent backgate control for nFETs and pFETs, which is promising for sub-22 nm scaling down. (semiconductor devices)

  10. A Highly Responsive Silicon Nanowire/Amplifier MOSFET Hybrid Biosensor.

    Science.gov (United States)

    Lee, Jieun; Jang, Jaeman; Choi, Bongsik; Yoon, Jinsu; Kim, Jee-Yeon; Choi, Yang-Kyu; Kim, Dong Myong; Kim, Dae Hwan; Choi, Sung-Jin

    2015-07-21

    This study demonstrates a hybrid biosensor comprised of a silicon nanowire (SiNW) integrated with an amplifier MOSFET to improve the current response of field-effect-transistor (FET)-based biosensors. The hybrid biosensor is fabricated using conventional CMOS technology, which has the potential advantage of high density and low noise performance. The biosensor shows a current response of 5.74 decades per pH for pH detection, which is 2.5 × 10(5) times larger than that of a single SiNW sensor. In addition, we demonstrate charged polymer detection using the biosensor, with a high current change of 4.5 × 10(5) with a 500 nM concentration of poly(allylamine hydrochloride). In addition, we demonstrate a wide dynamic range can be obtained by adjusting the liquid gate voltage. We expect that this biosensor will be advantageous and practical for biosensor applications which requires lower noise, high speed, and high density.

  11. A novel δ-doped partially insulated dopant-segregated Schottky barrier SOI MOSFET for analog/RF applications

    International Nuclear Information System (INIS)

    Patil, Ganesh C; Qureshi, S

    2011-01-01

    In this paper, a comparative analysis of single-gate dopant-segregated Schottky barrier (DSSB) SOI MOSFET and raised source/drain ultrathin-body SOI MOSFET (RSD UTB) has been carried out to explore the thermal efficiency, scalability and analog/RF performance of these devices. A novel p-type δ-doped partially insulated DSSB SOI MOSFET (DSSB Pi-OX-δ) has been proposed to reduce the self-heating effect and to improve the high-frequency performance of DSSB SOI MOSFET over RSD UTB. The improved analog/RF figures of merit such as transconductance, transconductance generation factor, unity-gain frequency, maximum oscillation frequency, short-circuit current gain and unilateral power gain in DSSB Pi-OX-δ MOSFET show the suitability of this device for analog/RF applications. The reduced drain-induced barrier lowering, subthreshold swing and parasitic capacitances also make this device highly scalable. By using mixed-mode simulation capability of MEDICI simulator a cascode amplifier has been implemented using all the structures (RSD UTB, DSSB SOI and DSSB Pi-OX-δ MOSFETs). The results of this implementation show that the gain-bandwidth product in the case of DSSB Pi-OX-δ MOSFET has improved by 50% as compared to RSD UTB and by 20% as compared to DSSB SOI MOSFET. The detailed fabrication flow of DSSB Pi-OX-δ MOSFET has been proposed which shows that with the bare minimum of steps the performance of DSSB SOI MOSFET can be improved significantly in comparison to RSD UTB

  12. Impact of back-gate bias on the hysteresis effect in partially depleted SOI MOSFETs

    International Nuclear Information System (INIS)

    Luo Jie-Xin; Chen Jing; Zhou Jian-Hua; Wu Qing-Qing; Chai Zhan; Yu Tao; Wang Xi

    2012-01-01

    The hysteresis effect in the output characteristics, originating from the floating body effect, has been measured in partially depleted (PD) silicon-on-insulator (SOI) MOSFETs at different back-gate biases. I D hysteresis has been developed to clarify the hysteresis characteristics. The fabricated devices show the positive and negative peaks in the I D hysteresis. The experimental results show that the I D hysteresis is sensitive to the back gate bias in 0.13-μm PD SOI MOSFETs and does not vary monotonously with the back-gate bias. Based on the steady-state Shockley-Read-Hall (SRH) recombination theory, we have successfully interpreted the impact of the back-gate bias on the hysteresis effect in PD SOI MOSFETs. (condensed matter: structural, mechanical, and thermal properties)

  13. Characterization of vertical strain silicon MOSFET incorporating dielectric pocket (SDP-VMOSFET)

    Energy Technology Data Exchange (ETDEWEB)

    Napiah, Z. A. F. M., E-mail: zulatfyi@utem.edu.my, E-mail: nazirah6969@gmail.com, E-mail: azlishah@utem.edu.my, E-mail: idzdihar@utem.edu.my, E-mail: faiz.arith@utem.edu.my, E-mail: yashidar@yahoo.com, E-mail: sitinabilahtaib@gmail.com; Makhtar, N., E-mail: zulatfyi@utem.edu.my, E-mail: nazirah6969@gmail.com, E-mail: azlishah@utem.edu.my, E-mail: idzdihar@utem.edu.my, E-mail: faiz.arith@utem.edu.my, E-mail: yashidar@yahoo.com, E-mail: sitinabilahtaib@gmail.com; Othman, M. A., E-mail: zulatfyi@utem.edu.my, E-mail: nazirah6969@gmail.com, E-mail: azlishah@utem.edu.my, E-mail: idzdihar@utem.edu.my, E-mail: faiz.arith@utem.edu.my, E-mail: yashidar@yahoo.com, E-mail: sitinabilahtaib@gmail.com; Idris, M. I., E-mail: zulatfyi@utem.edu.my, E-mail: nazirah6969@gmail.com, E-mail: azlishah@utem.edu.my, E-mail: idzdihar@utem.edu.my, E-mail: faiz.arith@utem.edu.my, E-mail: yashidar@yahoo.com, E-mail: sitinabilahtaib@gmail.com; Arith, F., E-mail: zulatfyi@utem.edu.my, E-mail: nazirah6969@gmail.com, E-mail: azlishah@utem.edu.my, E-mail: idzdihar@utem.edu.my, E-mail: faiz.arith@utem.edu.my, E-mail: yashidar@yahoo.com, E-mail: sitinabilahtaib@gmail.com; Yasin, N. Y. M., E-mail: zulatfyi@utem.edu.my, E-mail: nazirah6969@gmail.com, E-mail: azlishah@utem.edu.my, E-mail: idzdihar@utem.edu.my, E-mail: faiz.arith@utem.edu.my, E-mail: yashidar@yahoo.com, E-mail: sitinabilahtaib@gmail.com; Taib, S. N., E-mail: zulatfyi@utem.edu.my, E-mail: nazirah6969@gmail.com, E-mail: azlishah@utem.edu.my, E-mail: idzdihar@utem.edu.my, E-mail: faiz.arith@utem.edu.my, E-mail: yashidar@yahoo.com, E-mail: sitinabilahtaib@gmail.com [Centre for Telecommunication Research and Innovation (CeTRI), Faculty of Electronic and Computer Engineering, Universiti Teknikal Malaysia Melaka, Hang Tuah Jaya, 76100 Durian Tunggal, Melaka (Malaysia)

    2014-02-24

    The vertical Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) leads to a double channel width that can increase the packaging density. The strained silicon MOSFET was introduced to modify the carrier transport properties of silicon in order to enhance transport of both electrons and holes within strained layer. Dielectric pocket was act to control encroachment of the drain doping into the channel and reduce short channel effects (SCE). SDP-VMOSFET which was a combination of those advantages was proposed to overcome the SCE in term of leakage current, threshold voltage roll-off also Drain Induce Barrier Lowering (DIBL). As a result, SDP-VMOSFET produces a better threshold voltage and DIBL compared to related structures. Meanwhile, it gives slightly increased for leakage current compared to Vertical MOSFET Incorporating Dielectric Pocket. The characteristics of the SDP-VMOSFET are analyzed in order to optimize the performance of the device and leading to the next generation of IC technology.

  14. Characterization of vertical strain silicon MOSFET incorporating dielectric pocket (SDP-VMOSFET)

    International Nuclear Information System (INIS)

    Napiah, Z. A. F. M.; Makhtar, N.; Othman, M. A.; Idris, M. I.; Arith, F.; Yasin, N. Y. M.; Taib, S. N.

    2014-01-01

    The vertical Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) leads to a double channel width that can increase the packaging density. The strained silicon MOSFET was introduced to modify the carrier transport properties of silicon in order to enhance transport of both electrons and holes within strained layer. Dielectric pocket was act to control encroachment of the drain doping into the channel and reduce short channel effects (SCE). SDP-VMOSFET which was a combination of those advantages was proposed to overcome the SCE in term of leakage current, threshold voltage roll-off also Drain Induce Barrier Lowering (DIBL). As a result, SDP-VMOSFET produces a better threshold voltage and DIBL compared to related structures. Meanwhile, it gives slightly increased for leakage current compared to Vertical MOSFET Incorporating Dielectric Pocket. The characteristics of the SDP-VMOSFET are analyzed in order to optimize the performance of the device and leading to the next generation of IC technology

  15. Volumetric measurement of human red blood cells by MOSFET-based microfluidic gate.

    Science.gov (United States)

    Guo, Jinhong; Ai, Ye; Cheng, Yuanbing; Li, Chang Ming; Kang, Yuejun; Wang, Zhiming

    2015-08-01

    In this paper, we present a MOSFET-based (metal oxide semiconductor field-effect transistor) microfluidic gate to characterize the translocation of red blood cells (RBCs) through a gate. In the microfluidic system, the bias voltage modulated by the particles or biological cells is connected to the gate of MOSFET. The particles or cells can be detected by monitoring the MOSFET drain current instead of DC/AC-gating method across the electronic gate. Polystyrene particles with various standard sizes are utilized to calibrate the proposed device. Furthermore, RBCs from both adults and newborn blood sample are used to characterize the performance of the device in distinguishing the two types of RBCs. As compared to conventional DC/AC current modulation method, the proposed device demonstrates a higher sensitivity and is capable of being a promising platform for bioassay analysis. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. Simulating single-event burnout of n-channel power MOSFET's

    International Nuclear Information System (INIS)

    Johnson, G.H.; Hohl, J.H.; Schrimpf, R.D.; Galloway, K.F.

    1993-01-01

    Heavy ions are ubiquitous in a space environment. Single-event burnout of power MOSFET's is a sudden catastrophic failure mechanism that is initiated by the passage of a heavy ion through the device structure. The passage of the heavy ion generates a current filament that locally turns on a parasitic n-p-n transistor inherent to the power MOSFET. Subsequent high currents and high voltage in the device induce second breakdown of the parasitic bipolar transistor and hence meltdown of the device. This paper presents a model that can be used for simulating the burnout mechanism in order to gain insight into the significant device parameters that most influence the single-event burnout susceptibility of n-channel power MOSFET's

  17. Simultaneous On-State Voltage and Bond-Wire Resistance Monitoring of Silicon Carbide MOSFETs

    DEFF Research Database (Denmark)

    Baker, Nick; Luo, Haoze; Iannuzzo, Francesco

    2017-01-01

    the voltage between the kelvin-source and power-source can be used to specifically monitor bond-wire degradation. Meanwhile, the drain to kelvin-source voltage can be monitored to track defects in the semiconductor die or gate driver. Through an accelerated aging test on 20 A Silicon Carbide Metal......-Oxide-Semiconductor-Field-Effect Transistors (MOSFETs), it is shown that there are opposing trends in the evolution of the on-state resistances of both the bond-wires and the MOSFET die. In summary, after 50,000 temperature cycles, the resistance of the bond-wires increased by up to 2 mΩ, while the on-state resistance of the MOSFET dies...... decreased by approximately 1 mΩ. The conventional failure precursor (monitoring a single forward voltage) cannot distinguish between semiconductor die or bond-wire degradation. Therefore, the ability to monitor both these parameters due to the presence of an auxiliary-source terminal can provide more...

  18. Test setup for long term reliability investigation of Silicon Carbide MOSFETs

    DEFF Research Database (Denmark)

    Baker, Nick; Munk-Nielsen, Stig; Beczkowski, Szymon

    2013-01-01

    Silicon Carbide MOSFETs are now widely available and have frequently been demonstrated to offer numerous advantages over Silicon based devices. However, reliability issues remain a significant concern in their realisation in commercial power electronic systems. In this paper, a test bench...... is designed that enables an accelerated power cycling test to be performed on packaged Silicon Carbide MOSFETs (TO-247) under realistic operating conditions. An accelerated power cycling test is then performed, with on-state resistance selected as the observed parameter to detect degradation. On......-state resistance is routinely monitored online through the use of an innovative voltage measurement system. The packaged Silicon Carbide MOSFET is shown to exhibit a 25% increase in on-state resistance as the device ages throughout its lifetime, with the test still on-going....

  19. The GaN trench gate MOSFET with floating islands: High breakdown voltage and improved BFOM

    Science.gov (United States)

    Shen, Lingyan; Müller, Stephan; Cheng, Xinhong; Zhang, Dongliang; Zheng, Li; Xu, Dawei; Yu, Yuehui; Meissner, Elke; Erlbacher, Tobias

    2018-02-01

    A novel GaN trench gate (TG) MOSFET with P-type floating islands (FLI) in drift region, which can suppress the electric field peak at bottom of gate trench during the blocking state and prevent premature breakdown in gate oxide, is proposed and investigated by TCAD simulations. The influence of thickness, position, doping concentration and length of the FLI on breakdown voltage (BV) and specific on-resistance (Ron_sp) is studied, providing useful guidelines for design of this new type of device. Using optimized parameters for the FLI, GaN FLI TG-MOSFET obtains a BV as high as 2464 V with a Ron_sp of 3.0 mΩ cm2. Compared to the conventional GaN TG-MOSFET with the same structure parameters, the Baliga figure of merit (BFOM) is enhanced by 150%, getting closer to theoretical limit for GaN devices.

  20. Modeling the drain current and its equation parameters for lightly doped symmetrical double-gate MOSFETs

    International Nuclear Information System (INIS)

    Bhartia, Mini; Chatterjee, Arun Kumar

    2015-01-01

    A 2D model for the potential distribution in silicon film is derived for a symmetrical double gate MOSFET in weak inversion. This 2D potential distribution model is used to analytically derive an expression for the subthreshold slope and threshold voltage. A drain current model for lightly doped symmetrical DG MOSFETs is then presented by considering weak and strong inversion regions including short channel effects, series source to drain resistance and channel length modulation parameters. These derived models are compared with the simulation results of the SILVACO (Atlas) tool for different channel lengths and silicon film thicknesses. Lastly, the effect of the fixed oxide charge on the drain current model has been studied through simulation. It is observed that the obtained analytical models of symmetrical double gate MOSFETs are in good agreement with the simulated results for a channel length to silicon film thickness ratio greater than or equal to 2. (paper)

  1. Modeling the drain current and its equation parameters for lightly doped symmetrical double-gate MOSFETs

    Science.gov (United States)

    Bhartia, Mini; Chatterjee, Arun Kumar

    2015-04-01

    A 2D model for the potential distribution in silicon film is derived for a symmetrical double gate MOSFET in weak inversion. This 2D potential distribution model is used to analytically derive an expression for the subthreshold slope and threshold voltage. A drain current model for lightly doped symmetrical DG MOSFETs is then presented by considering weak and strong inversion regions including short channel effects, series source to drain resistance and channel length modulation parameters. These derived models are compared with the simulation results of the SILVACO (Atlas) tool for different channel lengths and silicon film thicknesses. Lastly, the effect of the fixed oxide charge on the drain current model has been studied through simulation. It is observed that the obtained analytical models of symmetrical double gate MOSFETs are in good agreement with the simulated results for a channel length to silicon film thickness ratio greater than or equal to 2.

  2. Charge deposition model for investigating SE-microdose effect in trench power MOSFETs

    International Nuclear Information System (INIS)

    Wan Xin; Zhou Weisong; Liu Daoguang; Bo Hanliang; Xu Jun

    2015-01-01

    It was demonstrated that heavy ions can induce large current—voltage (I–V) characteristics shift in commercial trench power MOSFETs, named single event microdose effect (SE-microdose effect). A model is presented to describe this effect. This model calculates the charge deposition by a single heavy ion hitting oxide and the subsequent charge transport under an electric field. Holes deposited at the SiO 2 /Si interface by a Xe ion are calculated by using this model. The calculated results were then used in Sentaurus TCAD software to simulate a trench power MOSFET's I–V curve shift after a Xe ion has hit it. The simulation results are consistent with the related experiment's data. In the end, several factors which affect the SE-microdose effect in trench power MOSFETs are investigated by using this model. (paper)

  3. Charge deposition model for investigating SE-microdose effect in trench power MOSFETs

    Science.gov (United States)

    Xin, Wan; Weisong, Zhou; Daoguang, Liu; Hanliang, Bo; Jun, Xu

    2015-05-01

    It was demonstrated that heavy ions can induce large current—voltage (I-V) characteristics shift in commercial trench power MOSFETs, named single event microdose effect (SE-microdose effect). A model is presented to describe this effect. This model calculates the charge deposition by a single heavy ion hitting oxide and the subsequent charge transport under an electric field. Holes deposited at the SiO2/Si interface by a Xe ion are calculated by using this model. The calculated results were then used in Sentaurus TCAD software to simulate a trench power MOSFET's I-V curve shift after a Xe ion has hit it. The simulation results are consistent with the related experiment's data. In the end, several factors which affect the SE-microdose effect in trench power MOSFETs are investigated by using this model.

  4. Modeling, Simulation, and Analysis of Novel Threshold Voltage Definition for Nano-MOSFET

    Directory of Open Access Journals (Sweden)

    Yashu Swami

    2017-01-01

    Full Text Available Threshold voltage (VTH is the indispensable vital parameter in MOSFET designing, modeling, and operation. Diverse expounds and extraction methods exist to model the on-off transition characteristics of the device. The governing gauge for efficient threshold voltage definition and extraction method can be itemized as clarity, simplicity, precision, and stability throughout the operating conditions and technology node. The outcomes of extraction methods diverge from the exact values due to various short-channel effects (SCEs and nonidealities present in the device. A new approach to define and extract the real value of VTH of MOSFET is proposed in the manuscript. The subsequent novel enhanced SCE-independent VTH extraction method named “hybrid extrapolation VTH extraction method” (HEEM is elaborated, modeled, and compared with few prevalent MOSFET threshold voltage extraction methods for validation of the results. All the results are verified by extensive 2D TCAD simulation and confirmed analytically at various technology nodes.

  5. Engineering Nanowire n-MOSFETs at L_{g}<8 nm

    Science.gov (United States)

    Mehrotra, Saumitra R.; Kim, SungGeun; Kubis, Tillmann; Povolotskyi, Michael; Lundstrom, Mark S.; Klimeck, Gerhard

    2013-07-01

    As metal-oxide-semiconductor field-effect transistors (MOSFET) channel lengths (Lg) are scaled to lengths shorter than Lg<8 nm source-drain tunneling starts to become a major performance limiting factor. In this scenario a heavier transport mass can be used to limit source-drain (S-D) tunneling. Taking InAs and Si as examples, it is shown that different heavier transport masses can be engineered using strain and crystal orientation engineering. Full-band extended device atomistic quantum transport simulations are performed for nanowire MOSFETs at Lg<8 nm in both ballistic and incoherent scattering regimes. In conclusion, a heavier transport mass can indeed be advantageous in improving ON state currents in ultra scaled nanowire MOSFETs.

  6. Static and low frequency noise characterization of ultra-thin body InAs MOSFETs

    Science.gov (United States)

    Karatsori, T. A.; Pastorek, M.; Theodorou, C. G.; Fadjie, A.; Wichmann, N.; Desplanque, L.; Wallart, X.; Bollaert, S.; Dimitriadis, C. A.; Ghibaudo, G.

    2018-05-01

    A complete static and low frequency noise characterization of ultra-thin body InAs MOSFETs is presented. Characterization techniques, such as the well-known Y-function method established for Si MOSFETs, are applied in order to extract the electrical parameters and study the behavior of these research grade devices. Additionally, the Lambert-W function parameter extraction methodology valid from weak to strong inversion is also used in order to verify its applicability in these experimental level devices. Moreover, a low-frequency noise characterization of the UTB InAs MOSFETs is presented, revealing carrier trapping/detrapping in slow oxide traps and remote Coulomb scattering as origin of 1/f noise, which allowed for the extraction of the oxide trap areal density. Finally, Lorentzian-like noise is also observed in the sub-micron area devices and attributed to both Random Telegraph Noise from oxide individual traps and g-r noise from the semiconductor interface.

  7. An analytical drain current model for symmetric double-gate MOSFETs

    Directory of Open Access Journals (Sweden)

    Fei Yu

    2018-04-01

    Full Text Available An analytical surface-potential-based drain current model of symmetric double-gate (sDG MOSFETs is described as a SPICE compatible model in this paper. The continuous surface and central potentials from the accumulation to the strong inversion regions are solved from the 1-D Poisson’s equation in sDG MOSFETs. Furthermore, the drain current is derived from the charge sheet model as a function of the surface potential. Over a wide range of terminal voltages, doping concentrations, and device geometries, the surface potential calculation scheme and drain current model are verified by solving the 1-D Poisson’s equation based on the least square method and using the Silvaco Atlas simulation results and experimental data, respectively. Such a model can be adopted as a useful platform to develop the circuit simulator and provide the clear understanding of sDG MOSFET device physics.

  8. An analytical drain current model for symmetric double-gate MOSFETs

    Science.gov (United States)

    Yu, Fei; Huang, Gongyi; Lin, Wei; Xu, Chuanzhong

    2018-04-01

    An analytical surface-potential-based drain current model of symmetric double-gate (sDG) MOSFETs is described as a SPICE compatible model in this paper. The continuous surface and central potentials from the accumulation to the strong inversion regions are solved from the 1-D Poisson's equation in sDG MOSFETs. Furthermore, the drain current is derived from the charge sheet model as a function of the surface potential. Over a wide range of terminal voltages, doping concentrations, and device geometries, the surface potential calculation scheme and drain current model are verified by solving the 1-D Poisson's equation based on the least square method and using the Silvaco Atlas simulation results and experimental data, respectively. Such a model can be adopted as a useful platform to develop the circuit simulator and provide the clear understanding of sDG MOSFET device physics.

  9. A simulation study of 6H-SiC Schottky barrier source/drain MOSFET

    International Nuclear Information System (INIS)

    Wang Yuan; Zhang Yimen; Zhang Yuming; Tang Xiaoyan

    2003-01-01

    A novel SiC metal-oxide-semiconductor field-effect transistor (SiC SBSD-MOSFET) with Schottky barrier contacts for source and drain is presented in this paper. This kind of device gives a fabrication advantage of avoiding the steps of ion implantation and annealing at high temperatures of the conventional SiC MOSFET. Also it has no problems of crystal damage caused by ion implantation and low activation rate of implanted atoms. The operational mechanism of this device is analyzed and its characteristics are comparable to the conventional SiC MOSFET from the simulation with MEDICI. The effects of different metal workfunctions, oxide thickness, and gate length on the device performance are discussed

  10. A novel double gate MOSFET by symmetrical insulator packets with improved short channel effects

    Science.gov (United States)

    Ramezani, Zeinab; Orouji, Ali A.

    2018-03-01

    In this article, we study a novel double-gate SOI MOSFET structure incorporating insulator packets (IPs) at the junction between channel and source/drain (S/D) ends. The proposed MOSFET has great strength in inhibiting short channel effects and OFF-state current that are the main problems compared with conventional one due to the significant suppressed penetrations of both the lateral electric field and the carrier diffusion from the S/D into the channel. Improvement of the hot electron reliability, the ON to OFF drain current ratio, drain-induced barrier lowering, gate-induced drain leakage and threshold voltage over conventional double-gate SOI MOSFETs, i.e. without IPs, is displayed with the simulation results. This study is believed to improve the CMOS device reliability and is suitable for the low-power very-large-scale integration circuits.

  11. Long Channel Carbon Nanotube as an Alternative to Nanoscale Silicon Channels in Scaled MOSFETs

    Directory of Open Access Journals (Sweden)

    Michael Loong Peng Tan

    2013-01-01

    Full Text Available Long channel carbon nanotube transistor (CNT can be used to overcome the high electric field effects in nanoscale length silicon channel. When maximum electric field is reduced, the gate of a field-effect transistor (FET is able to gain control of the channel at varying drain bias. The device performance of a zigzag CNTFET with the same unit area as a nanoscale silicon metal-oxide semiconductor field-effect transistor (MOSFET channel is assessed qualitatively. The drain characteristic of CNTFET and MOSFET device models as well as fabricated CNTFET device are explored over a wide range of drain and gate biases. The results obtained show that long channel nanotubes can significantly reduce the drain-induced barrier lowering (DIBL effects in silicon MOSFET while sustaining the same unit area at higher current density.

  12. Switching Investigations on a SiC MOSFET in a TO-247 Package

    DEFF Research Database (Denmark)

    Anthon, Alexander; Hernandez Botella, Juan Carlos; Zhang, Zhe

    2014-01-01

    This paper deals with the switching behavior of a SiC MOSFET in a TO-247 package. Based on simulations, critical parasitic inductances in the circuit layout are analyzed and their effect on the switching losses highlighted. Especially the common source inductance, a critical parameter in a TO-247...... package, has a major influence on the switching energy. Crucial design guidelines for an improved double pulse test circuit are introduced which are used for practical investigations on the switching behavior. Switching energies of a SiC MOSFET in a TO-247 package is measured depending on varying gate...... resistance and loop inductances. With total switching energy of 340.24 μJ, the SiC MOSFET has more than six times lower switching losses than a regular Si IGBT. Implementing the SiC switches in a 3 kW T-Type inverter topology, efficiency improvements of 0.8 % are achieved and maximum efficiency of 97...

  13. A Fast Electro-Thermal Co-Simulation Modeling Approach for SiC Power MOSFETs

    DEFF Research Database (Denmark)

    Ceccarelli, Lorenzo; Bahman, Amir Sajjad; Iannuzzo, Francesco

    2017-01-01

    The purpose of this work is to propose a novel electro-thermal co-simulation approach for the new generation of SiC MOSFETs, by development of a PSpice-based compact and physical SiC MOSFET model including temperature dependency of several parameters and a Simulink-based thermal network. The PSpice...... the FEM simulation of the DUT’s structure, performed in ANSYS Icepack. A MATLAB script is used to process the simulation data and feed the needed settings and parameters back into the simulation. The parameters for a CREE 1.2 kV/30 A SiC MOSFET have been identified and the electro-thermal model has been...

  14. Design and simulation of a nanoelectronic DG MOSFET current source using artificial neural networks

    International Nuclear Information System (INIS)

    Djeffal, F.; Dibi, Z.; Hafiane, M.L.; Arar, D.

    2007-01-01

    The double gate (DG) MOSFET has received great attention in recent years owing to the inherent suppression of short channel effects (SCEs), excellent subthreshold slope (S), improved drive current (I ds ) and transconductance (gm), volume inversion for symmetric devices and excellent scalability. Therefore, simulation tools which can be applied to design nanoscale transistors in the future require new theory and modeling techniques that capture the physics of quantum transport accurately and efficiently. In this sense, this work presents the applicability of the artificial neural networks (ANN) for the design and simulation of a nanoelectronic DG MOSFET current source. The latter is based on the 2D numerical Non-Equilibrium Green's Function (NEGF) simulation of the current-voltage characteristics of an undoped symmetric DG MOSFET. Our results are discussed in order to obtain some new and useful information about the ULSI technology

  15. A Novel Hybrid Nano Scale MOSFET Structure for Low Leak Application

    Directory of Open Access Journals (Sweden)

    A. Rana

    2011-06-01

    Full Text Available In this paper, novel hybrid MOSFET(HMOS structure has been proposed to reduce the gate leakage current drastically. This novel hybrid MOSFET (HMOS uses source/drain-to-gate non-overlap region in combination with high-K layer/interfacial oxide as gate stack. The extended S/D in the non-overlap region is induced by fringing gate electric field through the high-k dielectric spacer. The gate leakage behaviour of HMOS has been investigated with the help of compact analytical model and Sentaurus Simulation. The results so obtained show good agreement between model and simulation data. It is found that HMOS structure has reduced the gate leakage current to great extent as compared to conventional overlapped MOSFET structure. Further, the proposed structure had demonstrated improved on current, off current, subthreshold slope and DIBL characteristic.

  16. Investigation of Short Channel Effect on Vertical Structures in Nanoscale MOSFET

    Directory of Open Access Journals (Sweden)

    Munawar A. Riyadi

    2009-12-01

    Full Text Available The recent development of MOSFET demands innovative approach to maintain the scaling into nanoscale dimension. This paper focuses on the physical nature of vertical MOSFET in nanoscale regime. Vertical structure is one of the promising devices in further scaling, with relaxed-lithography feature in the manufacture. The comparison of vertical and lateral MOSFET performance for nanoscale channel length (Lch is demonstrated with the help of numerical tools. The evaluation of short channel effect (SCE parameters, i.e. threshold voltage roll-off, subthreshold swing (SS, drain induced barrier lowering (DIBL and leakage current shows the considerable advantages as well as its thread-off in implementing the structure, in particular for nanoscale regime.

  17. Power MOSFET-diode-based limiter for high-frequency ultrasound systems.

    Science.gov (United States)

    Choi, Hojong; Kim, Min Gon; Cummins, Thomas M; Hwang, Jae Youn; Shung, K Kirk

    2014-10-01

    The purpose of the limiter circuits used in the ultrasound imaging systems is to pass low-voltage echo signals generated by ultrasonic transducers while preventing high-voltage short pulses transmitted by pulsers from damaging front-end circuits. Resistor-diode-based limiters (a 50 Ω resistor with a single cross-coupled diode pair) have been widely used in pulse-echo measurement and imaging system applications due to their low cost and simple architecture. However, resistor-diode-based limiters may not be suited for high-frequency ultrasound transducer applications since they produce large signal conduction losses at higher frequencies. Therefore, we propose a new limiter architecture utilizing power MOSFETs, which we call a power MOSFET-diode-based limiter. The performance of a power MOSFET-diode-based limiter was evaluated with respect to insertion loss (IL), total harmonic distortion (THD), and response time (RT). We compared these results with those of three other conventional limiter designs and showed that the power MOSFET-diode-based limiter offers the lowest IL (-1.33 dB) and fastest RT (0.10 µs) with the lowest suppressed output voltage (3.47 Vp-p) among all the limiters at 70 MHz. A pulse-echo test was performed to determine how the new limiter affected the sensitivity and bandwidth of the transducer. We found that the sensitivity and bandwidth of the transducer were 130% and 129% greater, respectively, when combined with the new power MOSFET-diode-based limiter versus the resistor-diode-based limiter. Therefore, these results demonstrate that the power MOSFET-diode-based limiter is capable of producing lower signal attenuation than the three conventional limiter designs at higher frequency operation. © The Author(s) 2014.

  18. Conformal array design on arbitrary polygon surface with transformation optics

    Energy Technology Data Exchange (ETDEWEB)

    Deng, Li, E-mail: dengl@bupt.edu.cn; Hong, Weijun, E-mail: hongwj@bupt.edu.cn; Zhu, Jianfeng; Peng, Biao; Li, Shufang [Beijing Key Laboratory of Network System Architecture and Convergence, School of Information and Communication Engineering, Beijing University of Posts and Telecommunications, 100876 Beijing (China); Wu, Yongle, E-mail: wuyongle138@gmail.com [Beijing Key Laboratory of Work Safety Intelligent Monitoring, School of Electronic Engineering, Beijing University of Posts and Telecommunications, 100876 Beijing (China)

    2016-06-15

    A transformation-optics based method to design a conformal antenna array on an arbitrary polygon surface is proposed and demonstrated in this paper. This conformal antenna array can be adjusted to behave equivalently as a uniformly spaced linear array by applying an appropriate transformation medium. An typical example of general arbitrary polygon conformal arrays, not limited to circular array, is presented, verifying the proposed approach. In summary, the novel arbitrary polygon surface conformal array can be utilized in array synthesis and beam-forming, maintaining all benefits of linear array.

  19. Conformal array design on arbitrary polygon surface with transformation optics

    International Nuclear Information System (INIS)

    Deng, Li; Hong, Weijun; Zhu, Jianfeng; Peng, Biao; Li, Shufang; Wu, Yongle

    2016-01-01

    A transformation-optics based method to design a conformal antenna array on an arbitrary polygon surface is proposed and demonstrated in this paper. This conformal antenna array can be adjusted to behave equivalently as a uniformly spaced linear array by applying an appropriate transformation medium. An typical example of general arbitrary polygon conformal arrays, not limited to circular array, is presented, verifying the proposed approach. In summary, the novel arbitrary polygon surface conformal array can be utilized in array synthesis and beam-forming, maintaining all benefits of linear array.

  20. Compact Spectrometers Based on Linear Variable Filters

    Data.gov (United States)

    National Aeronautics and Space Administration — Demonstrate a linear-variable spectrometer with an H2RG array. Linear Variable Filter (LVF) spectrometers provide attractive resource benefits – high optical...

  1. A survey of SiC power MOSFETs short-circuit robustness and failure mode analysis

    DEFF Research Database (Denmark)

    Ceccarelli, L.; Reigosa, P. D.; Iannuzzo, F.

    2017-01-01

    The aim of this paper is to provide an extensive overview about the state-of-art commercially available SiC power MOSFET, focusing on their short-circuit ruggedness. A detailed literature investigation has been carried out, in order to collect and understand the latest research contribution within...... this topic and create a survey of the present scenario of SiC MOSFETs reliability evaluation and failure mode analysis, pointing out the evolution and improvements as well as the future challenges in this promising device technology....

  2. Random Telegraph Signal Amplitudes in Sub 100 nm (Decanano) MOSFETs: A 3D 'Atomistic' Simulation Study

    Science.gov (United States)

    Asenov, Asen; Balasubramaniam, R.; Brown, A. R.; Davies, J. H.; Saini, Subhash

    2000-01-01

    In this paper we use 3D simulations to study the amplitudes of random telegraph signals (RTS) associated with the trapping of a single carrier in interface states in the channel of sub 100 nm (decanano) MOSFETs. Both simulations using continuous doping charge and random discrete dopants in the active region of the MOSFETs are presented. We have studied the dependence of the RTS amplitudes on the position of the trapped charge in the channel and on the device design parameters. We have observed a significant increase in the maximum RTS amplitude when discrete random dopants are employed in the simulations.

  3. Random telegraph signal amplitudes in sub 100 nm (decanano) MOSFETs: a 3D `Atomistic' simulation study

    OpenAIRE

    Asenov, A.; Balasubramaniam, R.; Brown, A.R.; Davies, J.H.; Saini, S.

    2000-01-01

    In this paper we use 3D simulations to study the amplitudes of random telegraph signals (RTS) associated with the trapping of a single carrier in interface states in the channel of sub 100 nm (decanano) MOSFETs. Both simulations using continuous doping charge and random discrete dopants in the active region of the MOSFETs are presented. We have studied the dependence of the RTS amplitudes on the position of the trapped charge in the channel and on the device design parameters. We have observe...

  4. Microdose Induced Drain Leakage Effects in Power Trench MOSFETs: Experiment and Modeling

    Science.gov (United States)

    Zebrev, Gennady I.; Vatuev, Alexander S.; Useinov, Rustem G.; Emeliyanov, Vladimir V.; Anashin, Vasily S.; Gorbunov, Maxim S.; Turin, Valentin O.; Yesenkov, Kirill A.

    2014-08-01

    We study experimentally and theoretically the micro-dose induced drain-source leakage current in the trench power MOSFETs under irradiation with high-LET heavy ions. We found experimentally that cumulative increase of leakage current occurs by means of stochastic spikes corresponding to a strike of single heavy ion into the MOSFET gate oxide. We simulate this effect with the proposed analytic model allowing to describe (including Monte Carlo methods) both the deterministic (cumulative dose) and stochastic (single event) aspects of the problem. Based on this model the survival probability assessment in space heavy ion environment with high LETs was proposed.

  5. COMPARATIVE ANALYSIS OF QUANTUM EFFECTS IN NANOSCALE MULTIGATE MOSFETS USING VARIATIONAL APPROACH

    Directory of Open Access Journals (Sweden)

    V. PALANICHAMY

    2015-02-01

    Full Text Available In this work, the performance of multiple-gate SOI MOSFETs is analysed using variational approach including quantum effects. An analytical model is derived to accounting the quantum effects at the silicon (Si/silicon dioxide (SiO2 interface. A general procedure is used for calculating the quantum inversion charge density. Using this inversion charge density, the drain current is obtained. Our model results are compared with the simulation results and its shows very good agreement. Our results highlighted that cylindrical surrounding gate MOSFET is a good candidate to obtain the high drain current compared with other two devices.

  6. Dopant distributions in n-MOSFET structure observed by atom probe tomography

    International Nuclear Information System (INIS)

    Inoue, K.; Yano, F.; Nishida, A.; Takamizawa, H.; Tsunomura, T.; Nagai, Y.; Hasegawa, M.

    2009-01-01

    The dopant distributions in an n-type metal-oxide-semiconductor field effect transistor (MOSFET) structure were analyzed by atom probe tomography. The dopant distributions of As, P, and B atoms in a MOSFET structure (gate, gate oxide, channel, source/drain extension, and halo) were obtained. P atoms were segregated at the interface between the poly-Si gate and the gate oxide, and on the grain boundaries of the poly-Si gate, which had an elongated grain structure along the gate height direction. The concentration of B atoms was enriched near the edge of the source/drain extension where the As atoms were implanted.

  7. A Short-Circuit Safe Operation Area Identification Criterion for SiC MOSFET Power Modules

    DEFF Research Database (Denmark)

    Reigosa, Paula Diaz; Iannuzzo, Francesco; Luo, Haoze

    2017-01-01

    This paper proposes a new method for the investigation of the short-circuit safe operation area (SCSOA) of state-of-the-art SiC MOSFET power modules rated at 1.2 kV based on the variations in SiC MOSFET electrical parameters (e.g., short-circuit current and gate–source voltage). According...... to the experimental results, two different failure mechanisms have been identified, both reducing the short-circuit capability of SiC power modules with respect to discrete SiC devices. Based on such failure mechanisms, two short-circuit safety criteria have been formulated: 1) the short-circuit...

  8. A Novel DBC Layout for Current Imbalance Mitigation in SiC MOSFET Multichip Power Modules

    DEFF Research Database (Denmark)

    Li, Helong; Munk-Nielsen, Stig; Beczkowski, Szymon

    2016-01-01

    This paper proposes a novel Direct Bonded Copper (DBC) layout for mitigating the current imbalance among the paralleled SiC MOSFET dies in multichip power modules. Compared to the traditional layout, the proposed DBC layout significantly reduces the circuit mismatch and current coupling effect......, which consequently improves the current sharing among the paralleled SiC MOSFET dies in power module. Mathematic analysis and circuit model of the DBC layout are presented to elaborate on the superior features of the proposed DBC layout. Simulation and experimental results further verify the theoretical...

  9. Role of parasitic capacitances in power MOSFET turn-on switching speed limits

    DEFF Research Database (Denmark)

    Cittanti, Davide; Iannuzzo, Francesco; Hoene, Eckart

    2017-01-01

    This paper describes the effect of MOSFET internal capacitances on the channel current during the turn-on switching transition: an intrinsic theoretical switching speed limit is found and detailed mathematically. The set of analytical equations is solved and the effect of the displacement currents...... is highlighted with ideal simulated waveforms. A laboratory experiment is thus performed, in order to prove the theoretical predictions: a 25 mΩ SiC CREE power MOSFET is turned on in a no-load condition (zero drain current), starting from different drain-source voltage values. Finally, a LTSpice equivalent...

  10. Monte Carlo simulation of MOSFET dosimeter for electron backscatter using the GEANT4 code.

    Science.gov (United States)

    Chow, James C L; Leung, Michael K K

    2008-06-01

    The aim of this study is to investigate the influence of the body of the metal-oxide-semiconductor field effect transistor (MOSFET) dosimeter in measuring the electron backscatter from lead. The electron backscatter factor (EBF), which is defined as the ratio of dose at the tissue-lead interface to the dose at the same point without the presence of backscatter, was calculated by the Monte Carlo simulation using the GEANT4 code. Electron beams with energies of 4, 6, 9, and 12 MeV were used in the simulation. It was found that in the presence of the MOSFET body, the EBFs were underestimated by about 2%-0.9% for electron beam energies of 4-12 MeV, respectively. The trend of the decrease of EBF with an increase of electron energy can be explained by the small MOSFET dosimeter, mainly made of epoxy and silicon, not only attenuated the electron fluence of the electron beam from upstream, but also the electron backscatter generated by the lead underneath the dosimeter. However, this variation of the EBF underestimation is within the same order of the statistical uncertainties as the Monte Carlo simulations, which ranged from 1.3% to 0.8% for the electron energies of 4-12 MeV, due to the small dosimetric volume. Such small EBF deviation is therefore insignificant when the uncertainty of the Monte Carlo simulation is taken into account. Corresponding measurements were carried out and uncertainties compared to Monte Carlo results were within +/- 2%. Spectra of energy deposited by the backscattered electrons in dosimetric volumes with and without the lead and MOSFET were determined by Monte Carlo simulations. It was found that in both cases, when the MOSFET body is either present or absent in the simulation, deviations of electron energy spectra with and without the lead decrease with an increase of the electron beam energy. Moreover, the softer spectrum of the backscattered electron when lead is present can result in a reduction of the MOSFET response due to stronger

  11. The influences of fluorine and process variations on polysilicon film stress and MOSFET hot carrier effects

    Science.gov (United States)

    Lowry, Lynn E.; Macwilliams, Kenneth P.; Isaac, Mary

    1991-01-01

    The use of fluorinated gate oxides may provide an improvement in nMOSFET reliability by enhancing hot carrier resistance. In order to clarify the mechanisms by which polysilicon processing and fluorination influence the oxide behavior, a matrix of nMOSFET structures was prepared using various processing, doping, and implantation strategies. These structures were evaluated for crystalline morphology and chemical element distribution. Mechanical stress measurements were taken on the polysilicon films from room temperature to cryogenic temperature. These examinations showed that fluorination of a structure with randomly oriented polysilicon can reduce residual mechanical stress and improve hot carrier resistance at room temperature.

  12. Dopant distributions in n-MOSFET structure observed by atom probe tomography.

    Science.gov (United States)

    Inoue, K; Yano, F; Nishida, A; Takamizawa, H; Tsunomura, T; Nagai, Y; Hasegawa, M

    2009-11-01

    The dopant distributions in an n-type metal-oxide-semiconductor field effect transistor (MOSFET) structure were analyzed by atom probe tomography. The dopant distributions of As, P, and B atoms in a MOSFET structure (gate, gate oxide, channel, source/drain extension, and halo) were obtained. P atoms were segregated at the interface between the poly-Si gate and the gate oxide, and on the grain boundaries of the poly-Si gate, which had an elongated grain structure along the gate height direction. The concentration of B atoms was enriched near the edge of the source/drain extension where the As atoms were implanted.

  13. Array capabilities and future arrays

    International Nuclear Information System (INIS)

    Radford, D.

    1993-01-01

    Early results from the new third-generation instruments GAMMASPHERE and EUROGAM are confirming the expectation that such arrays will have a revolutionary effect on the field of high-spin nuclear structure. When completed, GAMMASHPERE will have a resolving power am order of magnitude greater that of the best second-generation arrays. When combined with other instruments such as particle-detector arrays and fragment mass analysers, the capabilites of the arrays for the study of more exotic nuclei will be further enhanced. In order to better understand the limitations of these instruments, and to design improved future detector systems, it is important to have some intelligible and reliable calculation for the relative resolving power of different instrument designs. The derivation of such a figure of merit will be briefly presented, and the relative sensitivities of arrays currently proposed or under construction presented. The design of TRIGAM, a new third-generation array proposed for Chalk River, will also be discussed. It is instructive to consider how far arrays of Compton-suppressed Ge detectors could be taken. For example, it will be shown that an idealised open-quote perfectclose quotes third-generation array of 1000 detectors has a sensitivity an order of magnitude higher again than that of GAMMASPHERE. Less conventional options for new arrays will also be explored

  14. Acoustic emission linear pulse holography

    International Nuclear Information System (INIS)

    Collins, H.D.; Busse, L.J.; Lemon, D.K.

    1983-01-01

    This paper describes the emission linear pulse holography which produces a chronological linear holographic image of a flaw by utilizing the acoustic energy emitted during crack growth. A thirty two point sampling array is used to construct phase-only linear holograms of simulated acoustic emission sources on large metal plates. The concept behind the AE linear pulse holography is illustrated, and a block diagram of a data acquisition system to implement the concept is given. Array element spacing, synthetic frequency criteria, and lateral depth resolution are specified. A reference timing transducer positioned between the array and the inspection zone and which inititates the time-of-flight measurements is described. The results graphically illustrate the technique using a one-dimensional FFT computer algorithm (ie. linear backward wave) for an AE image reconstruction

  15. Indium arsenide-on-SOI MOSFETs with extreme lattice mismatch

    Science.gov (United States)

    Wu, Bin

    Both molecular beam epitaxy (MBE) and metal organic chemical vapor deposition (MOCVD) have been used to explore the growth of InAs on Si. Despite 11.6% lattice mismatch, planar InAs structures have been observed by scanning electron microscopy (SEM) when nucleating using MBE on patterned submicron Si-on-insulator (SOI) islands. Planar structures of size as large as 500 x 500 nm 2 and lines of width 200 nm and length a few microns have been observed. MOCVD growth of InAs also generates single grain structures on Si islands when the size is reduced to 100 x 100 nm2. By choosing SOI as the growth template, selective growth is enabled by MOCVD. Post-growth pattern-then-anneal process, in which MOCVD InAs is deposited onto unpatterned SOI followed with patterning and annealing of InAs-on-Si structure, is found to change the relative lattice parameters of encapsulated 17/5 nm InAs/Si island. Observed from transmission electron diffraction (TED) patterns, the lattice mismatch of 17/5 nm InAs/Si island reduces from 11.2 to 4.2% after being annealed at 800°C for 30 minutes. High-k Al2O3 dielectrics have been deposited by both electron-beam-enabled physical vapor deposition (PVD) and atomic layer deposition (ALD). Films from both techniques show leakage currents on the order of 10-9A/cm2, at ˜1 MV/cm electric field, breakdown field > ˜6 MV/cm, and dielectric constant > 6, comparable to those of reported ALD prior arts by Groner. The first MOSFETs with extreme lattice mismatch InAs-on-SOI channels using PVD Al2O3 as the gate dielectric are characterized. Channel recess was used to improve the gate control of the drain current.

  16. Characterization of MOSFET detectors for in vivo dosimetry in interventional radiology and for dose reconstruction in case of overexposure.

    Science.gov (United States)

    Bassinet, Céline; Huet, Christelle; Baumann, Marion; Etard, Cécile; Réhel, Jean-Luc; Boisserie, Gilbert; Debroas, Jacques; Aubert, Bernard; Clairand, Isabelle

    2013-04-01

    As MOSFET (Metal Oxide Semiconductor Field Effect Transistor) detectors allow dose measurements in real time, the interest in these dosimeters is growing. The aim of this study was to investigate the dosimetric properties of commercially available TN-502RD-H MOSFET silicon detectors (Best Medical Canada, Ottawa, Canada) in order to use them for in vivo dosimetry in interventional radiology and for dose reconstruction in case of overexposure. Reproducibility of the measurements, dose rate dependence, and dose response of the MOSFET detectors have been studied with a Co source. Influence of the dose rate, frequency, and pulse duration on MOSFET responses has also been studied in pulsed x-ray fields. Finally, in order to validate the integrated dose given by MOSFET detectors, MOSFETs and TLDs (LiF:Mg,Cu,P) were fixed on an Alderson-Rando phantom in the conditions of an interventional neuroradiology procedure, and their responses have been compared. The results of this study show the suitability of MOSFET detectors for in vivo dosimetry in interventional radiology and for dose reconstruction in case of accident, provided a well-corrected energy dependence, a pulse duration equal to or higher than 10 ms, and an optimized contact between the detector and the skin of the patient are achieved.

  17. Determination of dose correction factor for energy and directional dependence of the MOSFET dosimeter in an anthropomorphic phantom

    International Nuclear Information System (INIS)

    Cho, Sung Koo; Choi, Sang Hyoun; Kim, Chan Hyeong; Na, Seong Ho

    2006-01-01

    In recent years, the MOSFET dosimeter has been widely used in various medical applications such as dose verification in radiation therapeutic and diagnostic applications. The MOSFET dosimeter is, however, mainly made of silicon and shows some energy dependence for low energy photons. Therefore, the MOSFET dosimeter tends to overestimate the dose for low energy scattered photons in a phantom. This study determines the correction factors to compensate these dependences of the MOSFET dosimeter in ATOM phantom. For this, we first constructed a computational model of the ATOM phantom based on the 3D CT image data of the phantom. The voxel phantom was then implemented in a Monte Carlo simulation code and used to calculate the energy spectrum of the photon field at each of the MOSFET dosimeter locations in the phantom. Finally, the correction factors were calculated based on the energy spectrum of the photon field at the dosimeter locations and the pre-determined energy and directional dependence of the MOSFET dosimeter. Our result for 60 Co and 137 Cs photon fields shows that the correction factors are distributed within the range of 0.89 and 0.97 considering all the MOSFET dosimeter locations in the phantom

  18. SNP Arrays

    Directory of Open Access Journals (Sweden)

    Jari Louhelainen

    2016-10-01

    Full Text Available The papers published in this Special Issue “SNP arrays” (Single Nucleotide Polymorphism Arrays focus on several perspectives associated with arrays of this type. The range of papers vary from a case report to reviews, thereby targeting wider audiences working in this field. The research focus of SNP arrays is often human cancers but this Issue expands that focus to include areas such as rare conditions, animal breeding and bioinformatics tools. Given the limited scope, the spectrum of papers is nothing short of remarkable and even from a technical point of view these papers will contribute to the field at a general level. Three of the papers published in this Special Issue focus on the use of various SNP array approaches in the analysis of three different cancer types. Two of the papers concentrate on two very different rare conditions, applying the SNP arrays slightly differently. Finally, two other papers evaluate the use of the SNP arrays in the context of genetic analysis of livestock. The findings reported in these papers help to close gaps in the current literature and also to give guidelines for future applications of SNP arrays.

  19. SEB circuit-level model in N-channel power MOSFETs; Modele pour circuits du burnout dans des MOSFETs de puissance de type N

    Energy Technology Data Exchange (ETDEWEB)

    Liu, J.; Schrimpf, R.D.; Massengill, L.; Galloway, K.F. [Vanderbilt Univ., Nashville, TN (United States)

    1999-07-01

    A Single Event Burnout (SEB) circuit model has been developed. The dependence of SEB sensitivity on various parameters is presented and compared with experimental results. The parasitic resistance and capacitance of the device as well as the circuit parameters contribute to the length of SEB pulse. Increasing the switching frequency of the power MOSFET may be a possible way to prevent SEB in applications. (authors)

  20. electrode array

    African Journals Online (AJOL)

    PROF EKWUEME

    A geoelectric investigation employing vertical electrical soundings (VES) using the Ajayi - Makinde Two-Electrode array and the ... arrangements used in electrical D.C. resistivity survey. These include ..... Refraction Tomography to Study the.

  1. Use of pre-irradiated commercial MOSFETs in a power supply hardened to withstand gamma radiation

    International Nuclear Information System (INIS)

    Marceau, M.; Huillet, H.

    1999-01-01

    This paper describes the approach used to design a hardened power supply capable of operating to a total gamma irradiation dose of 10 kGy(Si). Pre-irradiation of power MOSFETs proved to be necessary, and the paper also discusses the effects of this treatment. (authors)

  2. Performance Analysis of Trench Power MOSFETs in High-Frequency Synchronous Buck Converter Applications

    Directory of Open Access Journals (Sweden)

    Yali Xiong

    2008-01-01

    Full Text Available This paper investigates the performance perspectives and theoretical limitations of trench power MOSFETs in synchronous rectifier buck converters operating in the MHz frequency range. Several trench MOSFET technologies are studied using a mixed-mode device/circuit modeling approach. Individual power loss contributions from the control and synchronous MOSFETs, and their dependence on switching frequency between 500 kHz and 5 MHz are discussed in detail. It is observed that the conduction loss contribution decreases from 40% to 4% while the switching loss contribution increases from 60% to 96% as the switching frequency increases from 500 KHz to 5 MHz. Beyond 1 MHz frequency there is no obvious benefit to increase the die size of either SyncFET or CtrlFET. The RDS(ON×QG figure of merit (FOM still correlates well to the overall converter efficiency in the MHz frequency range. The efficiency of the hard switching buck topology is limited to 80% at 2 MHz and 65% at 5 MHz even with the most advanced trench MOSFET technologies.

  3. A sub-circuit MOSFET model with a wide temperature range including cryogenic temperature

    Energy Technology Data Exchange (ETDEWEB)

    Jia Kan; Sun Weifeng; Shi Longxing, E-mail: jiakan.01@gmail.com [National ASIC System Engineering Research Center, Southeast University, Nanjing 210096 (China)

    2011-06-15

    A sub-circuit SPICE model of a MOSFET for low temperature operation is presented. Two resistors are introduced for the freeze-out effect, and the explicit behavioral models are developed for them. The model can be used in a wide temperature range covering both cryogenic temperature and regular temperatures. (semiconductor devices)

  4. In vivo measurements with MOSFET detectors in oropharynx and nasopharynx intensity-modulated radiation therapy

    International Nuclear Information System (INIS)

    Marcie, Serge; Charpiot, Elisabeth; Bensadoun, Rene-Jean; Ciais, Gaston; Herault, Joel; Costa, Andre; Gerard, Jean-Pierre

    2005-01-01

    Purpose: To evaluate the feasibility of in vivo measurements with metal oxide semiconductor field effect transistor (MOSFET) dosimeters for oropharynx and nasopharynx intensity-modulated radiation therapy (IMRT). Methods and Materials: During a 1-year period, in vivo measurements of the dose delivered to one or two points of the oral cavity by IMRT were obtained with MOSFET dosimeters. Measurements were obtained during each session of 48 treatment plans for 21 patients, all of whom were fitted with a custom-made mouth plate. Calculated and measured values were compared. Results: A total of 344 and 452 measurements were performed for the right and left sides, respectively, of the oral cavity. Seventy percent of the discrepancies between calculated and measured values were within ±5%. Uncertainties were due to interfraction patient positions, intrafraction patient movements, and interfraction MOSFET positions. Nevertheless, the discrepancies between the measured and calculated means were within ±5% for 92% and 95% of the right and left sides, respectively. Comparison of these discrepancies and the discrepancies between calculated values and measurements made on a phantom revealed that all differences were within ±5%. Conclusion: Our experience demonstrates the feasibility of in vivo measurements with MOSFET dosimeters for oropharynx and nasopharynx IMRT

  5. In vivo dose verification for photon treatments of head and neck carcinomas using MOSFET dosimeters

    International Nuclear Information System (INIS)

    Tung, C.J.; Wang, L.C.; Wang, H.C.; Lee, C.C.; Chao, T.C.

    2008-01-01

    In vivo dosimetry was performed for the head and neck carcinoma patients during the treatment of a large photon field using MOSFETs. This study followed the protocols recommended by the European Society for Therapeutic Radiology and Oncology. A total of 32 portals belonging to 12 patients were under investigation. Results showed that the deviation between in vivo midline doses and planned target doses was partly due to the manual dose calculations in the treatment planning which used the patient geometric thickness rather than the radiological thickness. Other factors responsible for this deviation included the difficult positioning of MOSFETs on the face mask, the asymmetric positioning of MOSFETs on the left and right sides of the mask, and the asymmetric tissue inhomogeneities with respect to the body midline. To reduce the deviation contributed from these factors, in vivo midline doses were calculated by averaging the results for each bilaterally opposed portals and compared with corresponding planned target doses. This comparison showed that MOSFET dosimeters are suitable for in vivo dosimetry of the present study

  6. Trench angle: a key design factor for a deep trench superjunction MOSFET

    International Nuclear Information System (INIS)

    Kang, Hyemin; Lee, Jaegil; Lee, Kwangwon; Choi, Youngchul

    2015-01-01

    Why is the development of a deep trench superjunction (SJ) MOSFET above 600 V and under 8.0 mohm · cm 2 difficult? A deep trench SJ MOSFET is expected to have a low turn-on resistance because the post thermal process after the epitaxial process, which is normally used in a multi-step epitaxy structure, is unnecessary. When designing a deep trench SJ MOSFET, the trench angle is the most important factor because this determines the breakdown voltage (BV) and BV variations. In this paper, we investigated how the trench angle affects the BV and BV window as a condition of the possible thermal process. By employing a physical concept, ΔCharge, we explained why the maximum BV is decreased and the BV window is increased as the trench angle decreases. Also, we systematically scrutinized the transition of the vertical electric field by varying the trench angle. Furthermore, in a real case, the principle of the trench angle which contributes to the deviation of the charge imbalance and specific resistance of SJ is described. Finally, we discuss the challenge of SJ MOSFET development in the industry. (paper)

  7. The effect of gate length on SOI-MOSFETS operation | Baedi ...

    African Journals Online (AJOL)

    The effect of gate length on the operation of silicon-on-insulator (SOI) MOSFET structure with a layer of buried silicon oxide added to isolate the device body has been simulated. Three transistors with gate lengths of 100, 200 and 500 nm were simulated. Simulations showed that with a fixed channel length, when the gate ...

  8. Low-field mobility and carrier transport mechanism transition in nanoscale MOSFETs

    International Nuclear Information System (INIS)

    Liu Hongwei; Wang Runsheng; Huang Ru; Zhang Xing

    2010-01-01

    This paper extends the flux scattering method to study the carrier transport property in nanoscale MOSFETs with special emphasis on the low-field mobility and the transport mechanism transition. A unified analytical expression for the low-field mobility is proposed, which covers the entire regime from drift-diffusion transport to quasi-ballistic transport in 1-D, 2-D and 3-D MOSFETs. Two key parameters, namely the long-channel low-field mobility (μ 0 ) and the low-field mean free path (λ 0 ), are obtained from the experimental data, and the transport mechanism transition in MOSFETs is further discussed both experimentally and theoretically. Our work shows that λ 0 is available to characterize the inherent transition of the carrier transport mechanism rather than the low-field mobility. The mobility reduces in the MOSFET with the shrinking of the channel length; however, λ 0 is nearly a constant, and λ 0 can be used as the 'entry criterion' to determine whether the device begins to operate under quasi-ballistic transport to some extent. (semiconductor devices)

  9. A Novel DBC Layout for Current Imbalance Mitigation in SiC MOSFET Multichip Power Modules

    DEFF Research Database (Denmark)

    Li, Helong; Munk-Nielsen, Stig; Beczkowski, Szymon

    2016-01-01

    This letter proposes a novel direct bonded copper (DBC) layout for mitigating the current imbalance among the paralleled SiC MOSFET dies in multichip power modules. Compared to the traditional layout, the proposed DBC layout significantly reduces the circuit mismatch and current coupling effect...

  10. Calculation of midplane dose for total body irradiation from entrance and exit dose MOSFET measurements.

    Science.gov (United States)

    Satory, P R

    2012-03-01

    This work is the development of a MOSFET based surface in vivo dosimetry system for total body irradiation patients treated with bilateral extended SSD beams using PMMA missing tissue compensators adjacent to the patient. An empirical formula to calculate midplane dose from MOSFET measured entrance and exit doses has been derived. The dependency of surface dose on the air-gap between the spoiler and the surface was investigated by suspending a spoiler above a water phantom, and taking percentage depth dose measurements (PDD). Exit and entrances doses were measured with MOSFETs in conjunction with midplane doses measured with an ion chamber. The entrance and exit doses were combined using an exponential attenuation formula to give an estimate of midplane dose and were compared to the midplane ion chamber measurement for a range of phantom thicknesses. Having a maximum PDD at the surface simplifies the prediction of midplane dose, which is achieved by ensuring that the air gap between the compensator and the surface is less than 10 cm. The comparison of estimated midplane dose and measured midplane dose showed no dependence on phantom thickness and an average correction factor of 0.88 was found. If the missing tissue compensators are kept within 10 cm of the patient then MOSFET measurements of entrance and exit dose can predict the midplane dose for the patient.

  11. Optimum structures for gamma-ray radiation resistant SiC-MOSFETs

    Energy Technology Data Exchange (ETDEWEB)

    Mitomo, Satoshi; Matsuda, Takuma; Murata, Koichi; Yokoseki, Takashi [Saitama University, Sakuraku (Japan); National Institutes for Quantum and Radiological Science and Technology (QST), Takasaki (Japan); Makino, Takahiro; Takeyama, Akinori; Onoda, Shinobu; Ohshima, Takeshi [National Institutes for Quantum and Radiological Science and Technology (QST), Takasaki (Japan); Okubo, Shuichi; Tanaka, Yuki; Kandori, Mikio; Yoshie, Toru [Sanken Electric Co., Ltd., Niiza, Saitama (Japan); Hijikata, Yasuto [Saitama University, Sakuraku (Japan)

    2017-04-15

    In order to develop highly radiation-tolerant SiC MOSFETs, we investigated the dependence of the gamma-ray radiation response on the gate oxide thickness and nitridation processes, used for oxide growth and p-well implantation. SiC MOSFETs with a thick gate oxide (60 nm) showed a rapid decrease in the threshold voltage shift ΔV{sub th} of more than 400 kGy, and transitioned to the normally-on state at lower doses than those with a thin gate oxide (35 nm). The MOSFETs with gate oxides treated with lower concentrations of N{sub 2}O (10%) demonstrated a higher radiation tolerance (ΔV{sub th}, channel mobility, and subthreshold swing) than with a 100% N{sub 2}O treatment. The MOSFETs with more p-well implantation steps (three steps) showed a smaller negative shift of the threshold voltage relative to those implanted with two steps. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  12. Influences of Device and Circuit Mismatches on Paralleling Silicon Carbide MOSFETs

    DEFF Research Database (Denmark)

    Li, Helong; Munk-Nielsen, Stig; Wang, Xiongfei

    2016-01-01

    This paper addresses the influences of device and circuit mismatches on paralleling the Silicon Carbide (SiC) MOSFETs. Comprehensive theoretical analysis and experimental validation from paralleled discrete devices to paralleled dies in multichip power modules are first presented. Then, the influ......This paper addresses the influences of device and circuit mismatches on paralleling the Silicon Carbide (SiC) MOSFETs. Comprehensive theoretical analysis and experimental validation from paralleled discrete devices to paralleled dies in multichip power modules are first presented. Then......, the influence of circuit mismatch on paralleling SiC MOSFETs is investigated and experimentally evaluated for the first time. It is found that the mismatch of the switching loop stray inductance can also lead to on-state current unbalance with inductive output current, in addition to the on-state resistance...... of the device. It further reveals that circuit mismatches and a current coupling among the paralleled dies exist in a SiC MOSFET multichip power module, which is critical for the transient current distribution in the power module. Thus, a power module layout with an auxiliary source connection is developed...

  13. The effects of ionizing radiation on commercial power MOSFETs operated at cryogenic temperatures

    International Nuclear Information System (INIS)

    Johnson, G.H.; Kemp, W.T.; Ackermann, M.R.; Pugh, R.D.; Schrimpf, R.D.; Galloway, K.F.

    1994-01-01

    This is the first report of commercial n- and p-channel power MOSFETs exposed to ionizing radiation while operating in a cryogenic environment. The transistors were exposed to low energy x-rays while placed in a liquid nitrogen-cooled dewar. Results demonstrate significant performance and survivability advantages for space-borne power MOSFETs operated at cryogenic temperatures. The key advantages for low-temperature operation of power MOSFET's in an ionizing radiation environment are: (1) steeper subthreshold current slope before and after irradiation; (2) lower off-state leakage currents before and after irradiation; and (3) larger prerad threshold voltage for n-channel devices. The first two points are also beneficial for devices that are not irradiated, but the advantages are more significant in radiation environments. The third point is only an advantage for commercial devices operated in radiation environments. Results also demonstrate that commercial off-the-shelf power MOSFETs can be used for low-temperature operations in a limited total dose environment (i.e., many space applications)

  14. 10kV SiC MOSFET split output power module

    DEFF Research Database (Denmark)

    Beczkowski, Szymon; Li, Helong; Uhrenfeldt, Christian

    2015-01-01

    The poor body diode performance of the first generation of 10kV SiC MOSFETs and the parasitic turn-on phenomenon limit the performance of SiC based converters. Both these problems can potentially be mitigated using a split output topology. In this paper we present a comparison between a classical...

  15. Characterization of MOSFET dosimeters for low-dose measurements in maxillofacial anthropomorphic phantoms

    NARCIS (Netherlands)

    Koivisto, J.H.; Wolff, J.E.; Kiljunen, T.; Schulze, D.; Kortesniemi, M.

    2015-01-01

    The aims of this study were to characterize reinforced metal-oxide-semiconductor field-effect transistor (MOSFET) dosimeters to assess the measurement uncertainty, single exposure low-dose limit with acceptable accuracy, and the number of exposures required to attain the corresponding limit of the

  16. Single Event Effects (SEE) for Power Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs)

    Science.gov (United States)

    Lauenstein, Jean-Marie

    2011-01-01

    Single-event gate rupture (SEGR) continues to be a key failure mode in power MOSFETs. (1) SEGR is complex, making rate prediction difficult SEGR mechanism has two main components: (1) Oxide damage-- Reduces field required for rupture (2) Epilayer response -- Creates transient high field across the oxide.

  17. Comprehensive study of the electron scattering mechanisms in 4H-SiC MOSFETs

    Czech Academy of Sciences Publication Activity Database

    Uhnevionak, V.; Burenkov, A.; Strenger, C.; Ortiz, G.; Bedel-Pereira, E.; Mortet, Vincent; Cristiano, F.; Bauer, A.J.; Pichler, P.

    2015-01-01

    Roč. 62, č. 8 (2015), s. 2562-2570 ISSN 0018-9383 Institutional support: RVO:68378271 Keywords : electron mobility * Hall effect * scattering mechanisms * SiC MOSFET Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.207, year: 2015

  18. Single-event burnout of power MOSFET devices for satellite application

    International Nuclear Information System (INIS)

    Xue Yuxiong; Tian Kai; Cao Zhou; Yang Shiyu; Liu Gang; Cai Xiaowu; Lu Jiang

    2008-01-01

    Single-event burnout (SEB) sensitivity was tested for power MOSFET devices, JTMCS081 and JTMCS062, which were made in Institute of Microelectronics, Chinese Academy of Sciences, using californium-252 simulation source. SEB voltage threshold was found for devices under test (DUT). It is helpful for engineers to choose devices used in satellites. (authors)

  19. 2D Quantum Simulation of MOSFET Using the Non Equilibrium Green's Function Method

    Science.gov (United States)

    Svizhenko, Alexel; Anantram, M. P.; Govindan, T. R.; Yan, Jerry (Technical Monitor)

    2000-01-01

    The objectives this viewgraph presentation summarizes include: (1) the development of a quantum mechanical simulator for ultra short channel MOSFET simulation, including theory, physical approximations, and computer code; (2) explore physics that is not accessible by semiclassical methods; (3) benchmarking of semiclassical and classical methods; and (4) study other two-dimensional devices and molecular structure, from discretized Hamiltonian to tight-binding Hamiltonian.

  20. Establishing a standard calibration methodology for MOSFET detectors in computed tomography dosimetry

    International Nuclear Information System (INIS)

    Brady, S. L.; Kaufman, R. A.

    2012-01-01

    Purpose: The use of metal-oxide-semiconductor field-effect transistor (MOSFET) detectors for patient dosimetry has increased by ∼25% since 2005. Despite this increase, no standard calibration methodology has been identified nor calibration uncertainty quantified for the use of MOSFET dosimetry in CT. This work compares three MOSFET calibration methodologies proposed in the literature, and additionally investigates questions relating to optimal time for signal equilibration and exposure levels for maximum calibration precision. Methods: The calibration methodologies tested were (1) free in-air (FIA) with radiographic x-ray tube, (2) FIA with stationary CT x-ray tube, and (3) within scatter phantom with rotational CT x-ray tube. Each calibration was performed at absorbed dose levels of 10, 23, and 35 mGy. Times of 0 min or 5 min were investigated for signal equilibration before or after signal read out. Results: Calibration precision was measured to be better than 5%–7%, 3%–5%, and 2%–4% for the 10, 23, and 35 mGy respective dose levels, and independent of calibration methodology. No correlation was demonstrated for precision and signal equilibration time when allowing 5 min before or after signal read out. Differences in average calibration coefficients were demonstrated between the FIA with CT calibration methodology 26.7 ± 1.1 mV cGy −1 versus the CT scatter phantom 29.2 ± 1.0 mV cGy −1 and FIA with x-ray 29.9 ± 1.1 mV cGy −1 methodologies. A decrease in MOSFET sensitivity was seen at an average change in read out voltage of ∼3000 mV. Conclusions: The best measured calibration precision was obtained by exposing the MOSFET detectors to 23 mGy. No signal equilibration time is necessary to improve calibration precision. A significant difference between calibration outcomes was demonstrated for FIA with CT compared to the other two methodologies. If the FIA with a CT calibration methodology was used to create calibration coefficients for the