Compact multi-energy electron linear accelerators

International Nuclear Information System (INIS)

Tanabe, E.; Hamm, R.W.

1985-01-01

Two distinctly different concepts that have been developed for compact multi-energy, single-section, standing-wave electron linear accelerator structures are presented. These new concepts, which utilize (a) variable nearest neighbor couplings and (b) accelerating field phase switching, provide the capability of continuously varying the electron output energy from the accelerator without degrading the energy spectrum. These techniques also provide the means for continuously varying the energy spectrum while maintaining a given average electron energy, and have been tested successfully with several accelerators of length from 0.1 m to 1.9 m. Theoretical amd experimental results from these accelerators, and demonstrated applications of these techniques to medical and industrial linear accelerator technology will be described. In addition, possible new applications available to research and industry from these techniques are presented. (orig.)

Interface electron structure of Fe3Al/TiC composites

Institute of Scientific and Technical Information of China (English)

PANG Lai-xue; SUN Kang-ning; SUN Jia-tao; FAN Run-hua; REN Shuai

2006-01-01

Based on YU's solids and molecules emperical electron theory(EET), interface valence electron structure of TiC-Fe3Al composites was set up, and the valence electron density of different atomic states TiC and Fe3Al composites in various planes was determined. The results indicate that the electron density of (100)Fe3Al is consistent with that of (110)TiC in the first-class approximation, the absolute value of minimum electron density difference along the interface is 0.007 37 nm-2, and the relative value is 0.759%. (110)TiC//(100)Fe3Al preferred orientation is believed to benefit the formation of the cuboidal shape TiC. In the other hand, it shows that the particle growth is accompanied by the transport of electron, the deviation continuity of electron density intrinsically hinders the grain growth. The electron density of (100)TiC is not consistent with Fe3Al arbitrary crystallographic plane,thus it well explains that the increased titanium and carbon contents do not increase the size of large particles. The crystallographic orientation of (110)TiC//(100)FeAl will improve the mechanical properties. Therefore interface electron theory is an effective theoretical implement for designing excellent property of composites.

Electron Cloud Effect in the Linear Colliders

International Nuclear Information System (INIS)

Pivi, M

2004-01-01

Beam induced multipacting, driven by the electric field of successive positively charged bunches, may arise from a resonant motion of electrons, generated by secondary emission, bouncing back and forth between opposite walls of the vacuum chamber. The electron-cloud effect (ECE) has been observed or is expected at many storage rings [1]. In the beam pipe of the Damping Ring (DR) of a linear collider, an electron cloud is produced initially by ionization of the residual gas and photoelectrons from the synchrotron radiation. The cloud is then sustained by secondary electron emission. This electron cloud can reach equilibrium after the passage of only a few bunches. The electron-cloud effect may be responsible for collective effects as fast coupled-bunch and single-bunch instability, emittance blow-up or incoherent tune shift when the bunch current exceeds a certain threshold, accompanied by a large number of electrons in the vacuum chamber. The ECE was identified as one of the most important R and D topics in the International Linear Collider Report [2]. Systematic studies on the possible electron-cloud effect have been initiated at SLAC for the GLC/NLC and TESLA linear colliders, with particular attention to the effect in the positron main damping ring (MDR) and the positron Low Emittance Transport which includes the bunch compressor system (BCS), the main linac, and the beam delivery system (BDS). We present recent computer simulation results for the main features of the electron cloud generation in both machine designs. Thus, single and coupled-bunch instability thresholds are estimated for the GLC/NLC design

Electronic structure and electron dynamics at an organic molecule/metal interface: interface states of tetra-tert-butyl-imine/Au(111)

International Nuclear Information System (INIS)

Hagen, Sebastian; Wolf, Martin; Tegeder, Petra; Luo Ying; Haag, Rainer

2010-01-01

Time- and angle-resolved two-photon photoemission (2PPE) spectroscopies have been used to investigated the electronic structure, electron dynamics and localization at the interface between tetra-tert-butyl imine (TBI) and Au(111). At a TBI coverage of one monolayer (ML), the two highest occupied molecular orbitals, HOMO and HOMO-1, are observed at an energy of -1.9 and -2.6 eV below the Fermi level (E F ), respectively, and coincide with the d-band features of the Au substrate. In the unoccupied electronic structure, the lowest unoccupied molecular orbital (LUMO) has been observed at 1.6 eV with respect to E F . In addition, two delocalized states that arise from the modified image potential at the TBI/metal interface have been identified. Their binding energies depend strongly on the adsorption structure of the TBI adlayer, which is coverage dependent in the submonolayer (≤1 ML) regime. Thus the binding energy of the lower interface state (IS) shifts from 3.5 eV at 1.0 ML to 4.0 eV at 0.5 ML, which is accompanied by a pronounced decrease in its lifetime from 100 fs to below 10 fs. This is a result of differences in the wave function overlap with electronic states of the Au(111) substrate at different binding energies. This study shows that in order to fully understand the electronic structure of organic adsorbates at metal surfaces, not only adsorbate- and substrate-induced electronic states have to be considered but also ISs, which are the result of a potential formed by the interaction between the adsorbate and the substrate.

Bulk and interface quantum states of electrons in multi-layer heterostructures with topological materials

Science.gov (United States)

Nikolic, Aleksandar; Zhang, Kexin; Barnes, C. H. W.

2018-06-01

In this article we describe the bulk and interface quantum states of electrons in multi-layer heterostructures in one dimension, consisting of topological insulators (TIs) and topologically trivial materials. We use and extend an effective four-band continuum Hamiltonian by introducing position dependence to the eight material parameters of the Hamiltonian. We are able to demonstrate complete conduction-valence band mixing in the interface states. We find evidence for topological features of bulk states of multi-layer TI heterostructures, as well as demonstrating both complete and incomplete conduction-valence band inversion at different bulk state energies. We show that the linear k z terms in the low-energy Hamiltonian, arising from overlap of p z orbitals between different atomic layers in the case of chalcogenides, control the amount of tunneling from TIs to trivial insulators. Finally, we show that the same linear k z terms in the low-energy Hamiltonian affect the material’s ability to form the localised interface state, and we demonstrate that due to this effect the spin and probability density localisation in a thin film of Sb2Te3 is incomplete. We show that changing the parameter that controls the magnitude of the overlap of p z orbitals affects the transport characteristics of the topologically conducting states, with incomplete topological state localisation resulting in increased backscattering.

Non-linear imaging condition to image fractures as non-welded interfaces

NARCIS (Netherlands)

Minato, S.; Ghose, R.

2014-01-01

Hydraulic properties of a fractured reservoir are often controlled by large fractures. In order to seismically detect and characterize them, a high-resolution imaging method is necessary. We apply a non-linear imaging condition to image fractures, considered as non-welded interfaces. We derive the

Electron-electron scattering in linear transport in two-dimensional systems

DEFF Research Database (Denmark)

Hu, Ben Yu-Kuang; Flensberg, Karsten

1996-01-01

We describe a method for numerically incorporating electron-electron scattering in quantum wells for small deviations of the distribution function from equilibrium, within the framework of the Boltzmann equation. For a given temperature T and density n, a symmetric matrix needs to be evaluated only...... once, and henceforth it can be used to describe electron-electron scattering in any Boltzmann equation linear-response calculation for that particular T and n. Using this method, we calculate the distribution function and mobility for electrons in a quantum well, including full finite...

A Framework for Effective User Interface Design for Web-Based Electronic Commerce Applications

Directory of Open Access Journals (Sweden)

Justyna Burns

2001-01-01

Full Text Available Efficient delivery of relevant product information is increasingly becoming the central basis of competition between firms. The interface design represents the central component for successful information delivery to consumers. However, interface design for web-based information systems is probably more an art than a science at this point in time. Much research is needed to understand properties of an effective interface for electronic commerce. This paper develops a framework identifying the relationship between user factors, the role of the user interface and overall system success for web-based electronic commerce. The paper argues that web-based systems for electronic commerce have some similar properties to decision support systems (DSS and adapts an established DSS framework to the electronic commerce domain. Based on a limited amount of research studying web browser interface design, the framework identifies areas of research needed and outlines possible relationships between consumer characteristics, interface design attributes and measures of overall system success.

Probing electronic and vibrational properties at the electrochemical interface using SFG spectroscopy: Methanol electro-oxidation on Pt(1 1 0)

Science.gov (United States)

Vidal, F.; Busson, B.; Tadjeddine, A.

2005-02-01

We report the study of methanol electro-oxidation on Pt(1 1 0) using infrared-visible sum-frequency generation (SFG) vibrational spectroscopy. The use of this technique enables to probe the vibrational and electronic properties of the interface simultaneously in situ. We have investigated the vibrational properties of the interface in the CO ads internal stretch spectral region (1700-2150 cm -1) over a wide range of potentials. The analysis of the evolution of the C-O stretch line shape, which is related to the interference between the vibrational and electronic parts of the non-linear response, with the potential allows us to show that the onset of bulk methanol oxidation corresponds to the transition from a negatively to a positively charged surface.

Simulation of electron energy loss spectra of nanomaterials with linear-scaling density functional theory

International Nuclear Information System (INIS)

Tait, E W; Payne, M C; Ratcliff, L E; Haynes, P D; Hine, N D M

2016-01-01

Experimental techniques for electron energy loss spectroscopy (EELS) combine high energy resolution with high spatial resolution. They are therefore powerful tools for investigating the local electronic structure of complex systems such as nanostructures, interfaces and even individual defects. Interpretation of experimental electron energy loss spectra is often challenging and can require theoretical modelling of candidate structures, which themselves may be large and complex, beyond the capabilities of traditional cubic-scaling density functional theory. In this work, we present functionality to compute electron energy loss spectra within the onetep linear-scaling density functional theory code. We first demonstrate that simulated spectra agree with those computed using conventional plane wave pseudopotential methods to a high degree of precision. The ability of onetep to tackle large problems is then exploited to investigate convergence of spectra with respect to supercell size. Finally, we apply the novel functionality to a study of the electron energy loss spectra of defects on the (1 0 1) surface of an anatase slab and determine concentrations of defects which might be experimentally detectable. (paper)

Experimental studies of VpxB electron linear accelerator

International Nuclear Information System (INIS)

Taura, T.; Onihashi, H.; Otsuka, K.; Nishida, Y.; Yugami, N.

1989-01-01

In order to demonstrate a new electron linear accelerator an electron beam is accelerated either in the conventional linear accelerator scheme or in the V p xB scheme in a same machine and higher energy gain of about 18 % is observed in the V p xB scheme as is expected from the designed values. The experimental results are compared with the numerical simulation to show reasonable agreement. (author)

Cavity characterization for general use in linear electron accelerators

International Nuclear Information System (INIS)

Souza Neto, M.V. de.

1985-01-01

The main objective of this work is to is to develop measurement techniques for the characterization of microwave cavities used in linear electron accelerators. Methods are developed for the measurement of parameters that are essential to the design of an accelerator structure using conventional techniques of resonant cavities at low power. Disk-loaded cavities were designed and built, similar to those in most existing linear electron accelerators. As a result, the methods developed and the estimated accuracy were compared with those from other investigators. The results of this work are relevant for the design of cavities with the objective of developing linear electron accelerators. (author) [pt

Polarized electronic sources for future e+/e- linear colliders

International Nuclear Information System (INIS)

Tang, H.; Alley, R.K.; Clendenin, J.E.

1997-05-01

Polarized electron beams will play a crucial role in maximizing the physics potential for future e + /e - linear colliders. We will review the SLC polarized electron source (PES), present a design for a conventional PES for the Next Linear Collider (NLC), and discuss the physics issues of a polarized RF gun

Advanced Power Electronic Interfaces for Distributed Energy Systems Part 1: Systems and Topologies

Energy Technology Data Exchange (ETDEWEB)

Kramer, W.; Chakraborty, S.; Kroposki, B.; Thomas, H.

2008-03-01

This report summarizes power electronic interfaces for DE applications and the topologies needed for advanced power electronic interfaces. It focuses on photovoltaic, wind, microturbine, fuel cell, internal combustion engine, battery storage, and flywheel storage systems.

Ab initio transmission electron microscopy image simulations of coherent Ag-MgO interfaces

International Nuclear Information System (INIS)

Mogck, S.; Kooi, B.J.; Hosson, J.Th.M. de; Finnis, M.W.

2004-01-01

Density-functional theory calculations, within the plane-wave-ultrasoft pseudopotential framework, were performed in the projection for MgO and for the coherent (111) Ag-MgO polar interface. First-principles calculations were incorporated in high-resolution transmission electron microscopy (HRTEM) simulations by converting the charge density into electron scattering factors to examine the influence of charge transfer, charge redistribution at the interface, and ionicity on the dynamical electron scattering and on calculated HRTEM images. It is concluded that the ionicity of oxides and the charge redistribution at interfaces play a significant role in HRTEM image simulations. In particular, the calculations show that at oxygen-terminated (111) Ag-MgO interfaces the first oxygen layer at the interface is much brighter than that in calculations with neutral atoms, in agreement with experimental observations

Bulk and interface defects in electron irradiated InP

International Nuclear Information System (INIS)

Peng Chen; Sun Heng-hui

1989-01-01

Systematic studies on the structure of defects in InP caused by electron irradiation are conducted based on experimental measurements and theoretical calculations. The rates of introduction and annealing-out temperatures of In and P vancancies are estimated using proper theoretical models. These calculations reveal that after room temperature irradiation only complexes may exist. It is also supported by our experimental data that the sum of introducing rates of three detected levels are less than the theoretical value calculated for single vacancies. According to our equation on the relation between interface states and DLTS signal and from the results of computer calculation we believe that the broad peak appearing in the DLTS diagram before irradiation is related to interface states. Its disappearance after electron irradiation suggests the reduction of interface states; this is further confirmed by the reduction of surface recombination rate derived from the results of surface photovoltage measurement

Relaxation of the electronic states at a thin-layer YBa2Cu 3O7/PrBa2Cu3O7 interface

KAUST Repository

Gó mez, Javier Alexandra M; Larkin, Ivan A.; Schwingenschlö gl, Udo

2010-01-01

We discuss in detail spin-polarized electronic structure calculations for the 1 × 1 YBa2Cu3O7/PrBa 2Cu3O7 superlattice. Our results are based on the full-potential linear augmented plane wave method and the generalized gradient approximation for the exchange-correlation functional. The on-site Coulomb interaction affecting the correlated Cu 3d and Pr 4f electrons is taken into consideration. At first glance the YBa2Cu3O 7/PrBa2Cu3O7 interface appears to be inert, i.e., the electronic states do not show a clear sign of interaction between the two component materials. Nonetheless, a total energy analysis points to a significant modification of the magnetic coupling in the vicinity of the interface due to the relaxation of the electronic structure. © 2010 Elsevier B.V. All rights reserved.

Relaxation of the electronic states at a thin-layer YBa2Cu 3O7/PrBa2Cu3O7 interface

KAUST Repository

Gómez, Javier Alexandra M

2010-11-01

We discuss in detail spin-polarized electronic structure calculations for the 1 × 1 YBa2Cu3O7/PrBa 2Cu3O7 superlattice. Our results are based on the full-potential linear augmented plane wave method and the generalized gradient approximation for the exchange-correlation functional. The on-site Coulomb interaction affecting the correlated Cu 3d and Pr 4f electrons is taken into consideration. At first glance the YBa2Cu3O 7/PrBa2Cu3O7 interface appears to be inert, i.e., the electronic states do not show a clear sign of interaction between the two component materials. Nonetheless, a total energy analysis points to a significant modification of the magnetic coupling in the vicinity of the interface due to the relaxation of the electronic structure. © 2010 Elsevier B.V. All rights reserved.

Electronic Processes at Organic−Organic Interfaces: Insight from Modeling and Implications for Opto-electronic Devices †

KAUST Repository

Beljonne, David

2011-02-08

We report on the recent progress achieved in modeling the electronic processes that take place at interfaces between π-conjugated materials in organic opto-electronic devices. First, we provide a critical overview of the current computational techniques used to assess the morphology of organic: organic heterojunctions; we highlight the compromises that are necessary to handle large systems and multiple time scales while preserving the atomistic details required for subsequent computations of the electronic and optical properties. We then review some recent theoretical advances in describing the ground-state electronic structure at heterojunctions between donor and acceptor materials and highlight the role played by charge-transfer and long-range polarization effects. Finally, we discuss the modeling of the excited-state electronic structure at organic:organic interfaces, which is a key aspect in the understanding of the dynamics of photoinduced electron-transfer processes. © 2010 American Chemical Society.

Linking Informal and Formal Electronics Recycling via an Interface Organization

Directory of Open Access Journals (Sweden)

Yoshiaki Totoki

2013-07-01

Full Text Available Informal recycling of electronics in the developing world has emerged as a new global environmental concern. The primary approach to address this problem has been command-and-control policies that ban informal recycling and international trade in electronic scrap. These bans are difficult to enforce and also have negative effects by reducing reuse of electronics, and employment for people in poverty. An alternate approach is to link informal and formal sectors so as to maintain economic activity while mitigating environmental damages. This article explores the idea of an interface organization that purchases components and waste from informal dismantlers and passes them on to formal processors. Environmental, economic and social implications of interface organizations are discussed. The main environmental questions to resolve are what e-scrap components should be targeted by the interface organization, i.e., circuit boards, wires, and/or plastic parts. Economically, when formal recycling is more profitable (e.g., for circuit boards, the interface organization is revenue positive. However, price subsidies are needed for copper wires and residual waste to incentivize informal dismantlers to turn in for formal processing. Socially, the potential for corruption and gaming of the system is critical and needs to be addressed.

Electronic structure of ferromagnet-insulator interfaces: Fe/MgO and Co/MgO

Energy Technology Data Exchange (ETDEWEB)

Mueller, M.

2007-07-11

In this thesis the electronic structure of Fe/MgO{sub x} and Co/MgO{sub x} ferromagnet-insulator interfaces, representing material systems which are widely used in magnetic tunnel junctions, is studied by means of spin- and angle-resolved photoemission spectroscopy. The photoemission studies focus particularly on the response of the ferromagnetic electronic system in contact with MgO of varying stoichiometries, as this reflects the mechanisms of metal-oxide bonding at real ferromagnet-insulator interfaces. The correlation between chemical bonding and electronic structure formation is analyzed by combining information from core- and valence-band photoemission spectroscopy. The spectral features are compared to band structure calculations, which are performed using the SPR-KKR method. The Fe/MgO and Co/MgO systems are prepared by molecular beam epitaxy under ultrahigh vacuum conditions on well-defined (4 x 6) GaAs(001) substrates. A structural analysis by means of low-energy electron diffraction (LEED) reveals their body-centered cubic crystalline structure, whereas the chemical characterization by Auger electron spectroscopy is used to quantify the chemical environment at the sample surfaces. The magnetic analysis, using the magneto-optical Kerr effect, reveals the uniaxial anisotropy of the ferromagnetic layers. A crucial parameter is given by the MgO degree of oxidation, which is addressed by means of core-level spectroscopy and quantified by suitable fitting procedures of the Mg 2p core level. The results of the photoemission experiments show, that the electronic structure of the Fe/MgO and Co/MgO ferromagnet/insulator interfaces and, consequently, the interfacial spin polarization are sensitively controlled by the interface chemistry. In particular, three distinct scenarios are identified: the nearly stoichiometric, the oxygen-deficient and the over-oxidized ferromagnet/MgO interface. Each case is defined by innate characteristics of the electronic structure at

User Interface of MUDR Electronic Health Record

Czech Academy of Sciences Publication Activity Database

Hanzlíček, Petr; Špidlen, Josef; Heroutová, Helena; Nagy, Miroslav

2005-01-01

Roč. 74, - (2005), s. 221-227 ISSN 1386-5056 R&D Projects: GA MŠk LN00B107 Institutional research plan: CEZ:AV0Z10300504 Keywords : electronic health record * user interface * data entry * knowledge base Subject RIV: BB - Applied Statistics, Operational Research Impact factor: 1.374, year: 2005

A unique metal-semiconductor interface and resultant electron transfer phenomenon

OpenAIRE

Taft, S. L.

2012-01-01

An unusual electron transfer phenomenon has been identified from an n-type semiconductor to Schottky metal particles, the result of a unique metal semiconductor interface that results when the metal particles are grown from the semiconductor substrate. The unique interface acts as a one-way (rectifying) open gateway and was first identified in reduced rutile polycrystalline titanium dioxide (an n-type semiconductor) to Group VIII (noble) metal particles. The interface significantly affects th...

Electron-electron luminosity in the Next Linear Collider -- a preliminary study

International Nuclear Information System (INIS)

Zimmermann, F.; Thompson, K.A.; Helm, R.H.

1997-11-01

In this paper, the authors discuss some operational aspects of electron-electron collisions at the Next Linear Collider (NLC) and estimate the luminosity attainable in such a machine. They also consider the use of two future technologies which could simplify the operation and improve the luminosity in an e - e - collider: polarized rf guns and plasma lenses

Scattering theory of ballistic-electron-emission microscopy at nonepitaxial interfaces

International Nuclear Information System (INIS)

Smith, D. L.; Kozhevnikov, M.; Lee, E. Y.; Narayanamurti, V.

2000-01-01

We present an interface scattering model to describe ballistic-electron-emission microscopy (BEEM) at nonepitaxial metal/semiconductor interfaces. The model starts with a Hamiltonian consisting of the sum of two terms: one term, H 0 , describes an ideal interface for which the interface parallel component of wave vector is a good quantum number, and the second term, δH, describes interfacial scattering centers. The eigenstates of H 0 consist of an incident and a reflected part in the metal and a transmitted part in the semiconductor. The three components of each eigenstate have the same interface parallel wave vector. Because tunneling preferentially weights forward-directed states, the interface parallel component of wave vector is small for the H 0 eigenstates that are initially populated with high probability in BEEM. δH scatters electrons between the eigenstates of H 0 . The scattering conserves energy, but not the interface parallel wave vector. In the final state of the scattering process, states with a large interface parallel wave vector can be occupied with reasonable probability. If scattering is weak, so that the parallel wave vector is nearly conserved, the calculated collector current into conduction-band valleys with zero parallel wave vector at the minimum, such as the Γ valley for GaAs(100), is much larger than the calculated collector current into conduction-band valleys with a large parallel wave vector at the minimum, such as the L valleys for GaAs(100). However, if scattering is strong, the injected electron flux distribution is redistributed and valleys with zero interface transverse wave vector at their energy minimum are not preferentially weighted. Instead, the weighting varies as the density of final states for the scattering process so that, for example, the calculated L-channel collector current is much larger than the calculated Γ-channel collector current for GaAs(100). Interfacial scattering reduces the overall magnitude of the

Graph-based linear scaling electronic structure theory

Energy Technology Data Exchange (ETDEWEB)

Niklasson, Anders M. N., E-mail: amn@lanl.gov; Negre, Christian F. A.; Cawkwell, Marc J.; Swart, Pieter J.; Germann, Timothy C.; Bock, Nicolas [Theoretical Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Mniszewski, Susan M.; Mohd-Yusof, Jamal; Wall, Michael E.; Djidjev, Hristo [Computer, Computational, and Statistical Sciences Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Rubensson, Emanuel H. [Division of Scientific Computing, Department of Information Technology, Uppsala University, Box 337, SE-751 05 Uppsala (Sweden)

2016-06-21

We show how graph theory can be combined with quantum theory to calculate the electronic structure of large complex systems. The graph formalism is general and applicable to a broad range of electronic structure methods and materials, including challenging systems such as biomolecules. The methodology combines well-controlled accuracy, low computational cost, and natural low-communication parallelism. This combination addresses substantial shortcomings of linear scaling electronic structure theory, in particular with respect to quantum-based molecular dynamics simulations.

Freezing hot electrons. Electron transfer and solvation dynamics at D{sub 2}O and NH{sub 3}-metal interfaces

Energy Technology Data Exchange (ETDEWEB)

Staehler, A.J.

2007-05-15

The present work investigates the electron transfer and solvation dynamics at the D{sub 2}O/Cu(111), D{sub 2}O/Ru(001), and NH{sub 3}/Cu(111) interfaces using femtosecond time-resolved two-photon photoelectron spectroscopy. Within this framework, the influence of the substrate, adsorbate structure and morphology, solvation site, coverage, temperature, and solvent on the electron dynamics are studied, yielding microscopic insight into the underlying fundamental processes. Transitions between different regimes of ET, substrate-dominated, barrier-determined, strong, and weak coupling are observed by systematic variation of the interfacial properties and development of empirical model descriptions. It is shown that the fundamental steps of the interfacial electron dynamics are similar for all investigated systems: Metal electrons are photoexcited to unoccupied metal states and transferred into the adlayer via the adsorbate's conduction band. The electrons localize at favorable sites and are stabilized by reorientations of the surrounding polar solvent molecules. Concurrently, they decay back two the metal substrate, as it offers a continuum of unoccupied states. However, the detailed characteristics vary for the different investigated interfaces: For amorphous ice-metal interfaces, the electron transfer is initially, right after photoinjection, dominated by the substrate's electronic surface band structure. With increasing solvation, a transient barrier evolves at the interface that increasingly screens the electrons from the substrate. Tunneling through this barrier becomes the rate-limiting step for ET. The competition of electron decay and solvation leads to lifetimes of the solvated electrons in the order of 100 fs. Furthermore, it is shown that the electrons bind in the bulk of the ice layers, but on the edges of adsorbed D{sub 2}O clusters and that the ice morphology strongly influences the electron dynamics. For the amorphous NH{sub 3}/Cu(111

Tuning the conductivity threshold and carrier density of two-dimensional electron gas at oxide interfaces through interface engineering

Directory of Open Access Journals (Sweden)

H. J. Harsan Ma

2015-08-01

Full Text Available The two-dimensional electron gas (2DEG formed at the perovskite oxides heterostructures is of great interest because of its potential applications in oxides electronics and nanoscale multifunctional devices. A canonical example is the 2DEG at the interface between a polar oxide LaAlO3 (LAO and non-polar SrTiO3 (STO. Here, the LAO polar oxide can be regarded as the modulating or doping layer and is expected to define the electronic properties of 2DEG at the LAO/STO interface. However, to practically implement the 2DEG in electronics and device design, desired properties such as tunable 2D carrier density are necessary. Here, we report the tuning of conductivity threshold, carrier density and electronic properties of 2DEG in LAO/STO heterostructures by insertion of a La0.5Sr0.5TiO3 (LSTO layer of varying thicknesses, and thus modulating the amount of polarization of the oxide over layers. Our experimental result shows an enhancement of carrier density up to a value of about five times higher than that observed at the LAO/STO interface. A complete thickness dependent metal-insulator phase diagram is obtained by varying the thickness of LAO and LSTO providing an estimate for the critical thickness needed for the metallic phase. The observations are discussed in terms of electronic reconstruction induced by polar oxides.

Development of electron linear accelerators in SAMEER

International Nuclear Information System (INIS)

Krishnan, R.

2015-01-01

LINear Accelerator (LINAC) based Radiotherapy machine is a key tool for Cancer Treatment. The number of such linac machines available is far less than the actual requirement projected, to suffice the needs of the vast number of Cancer Patients in the country. Development of indigenous state-of-art cancer therapy machine was therefore a crucial achievement under the Jai Vigyan Project of Govt. of India. With the support of Department of Electronics and Information Technology (DeitY), Govt of India, SAMEER has successfully developed 6 MV Radiation Oncology machine at par international standards and is being used to treat cancer patients in the country. SAMEER is also currently developing the dual photon energy and multiple electron energy medical linac machine for radiotherapy and also critical accessories to make a complete oncology system required for advanced state of art treatment. In this paper the work in SAMEER on electron linear accelerators for the medical applications and the related technology and facilities available will be presented. (author)

Electronic Processes at Organic−Organic Interfaces: Insight from Modeling and Implications for Opto-electronic Devices †

KAUST Repository

Beljonne, David; Cornil, Jérôme; Muccioli, Luca; Zannoni, Claudio; Brédas, Jean-Luc; Castet, Frédéric

2011-01-01

We report on the recent progress achieved in modeling the electronic processes that take place at interfaces between π-conjugated materials in organic opto-electronic devices. First, we provide a critical overview of the current computational

Electronic structure of hybrid interfaces for polymer-based electronics

International Nuclear Information System (INIS)

Fahlman, M; Crispin, A; Crispin, X; Henze, S K M; Jong, M P de; Osikowicz, W; Tengstedt, C; Salaneck, W R

2007-01-01

The fundamentals of the energy level alignment at anode and cathode electrodes in organic electronics are described. We focus on two different models that treat weakly interacting organic/metal (and organic/organic) interfaces: the induced density of interfacial states model and the so-called integer charge transfer model. The two models are compared and evaluated, mainly using photoelectron spectroscopy data of the energy level alignment of conjugated polymers and molecules at various organic/metal and organic/organic interfaces. We show that two different alignment regimes are generally observed: (i) vacuum level alignment, which corresponds to the lack of vacuum level offsets (Schottky-Mott limit) and hence the lack of charge transfer across the interface, and (ii) Fermi level pinning where the resulting work function of an organic/metal and organic/organic bilayer is independent of the substrate work function and an interface dipole is formed due to charge transfer across the interface. We argue that the experimental results are best described by the integer charge transfer model which predicts the vacuum level alignment when the substrate work function is above the positive charge transfer level and below the negative charge transfer level of the conjugated material. The model further predicts Fermi level pinning to the positive (negative) charge transfer level when the substrate work function is below (above) the positive (negative) charge transfer level. The nature of the integer charge transfer levels depend on the materials system: for conjugated large molecules and polymers, the integer charge transfer states are polarons or bipolarons; for small molecules' highest occupied and lowest unoccupied molecular orbitals and for crystalline systems, the relevant levels are the valence and conduction band edges. Finally, limits and further improvements to the integer charge transfer model are discussed as well as the impact on device design. (topical review)

An alternative test for verifying electronic balance linearity

International Nuclear Information System (INIS)

Thomas, I.R.

1998-02-01

This paper presents an alternative method for verifying electronic balance linearity and accuracy. This method is being developed for safeguards weighings (weighings for the control and accountability of nuclear material) at the Idaho National Engineering and Environmental Laboratory (INEEL). With regard to balance linearity and accuracy, DOE Order 5633.3B, Control and Accountability of Nuclear Materials, Paragraph 2, 4, e, (1), (a) Scales and Balances Program, states: ''All scales and balances used for accountability purposes shall be maintained in good working condition, recalibrated according to an established schedule, and checked for accuracy and linearity on each day that the scale or balance is used for accountability purposes.'' Various tests have been proposed for testing accuracy and linearity. In the 1991 Measurement Science Conference, Dr. Walter E. Kupper presented a paper entitled: ''Validation of High Accuracy Weighing Equipment.'' Dr. Kupper emphasized that tolerance checks for calibrated, state-of-the-art electronic equipment need not be complicated, and he presented four easy steps for verifying that a calibrated balance is operating correctly. These tests evaluate the standard deviation of successive weighings (of the same load), the off-center error, the calibration error, and the error due to nonlinearity. This method of balance validation is undoubtedly an authoritative means of ensuring balance operability, yet it could have two drawbacks: one, the test for linearity is not intuitively obvious, especially from a statistical viewpoint; and two, there is an absence of definitively defined testing limits. Hence, this paper describes an alternative means of verifying electronic balance linearity and accuracy that is being developed for safeguards measurements at the INEEL

Linear versus non-linear structural information limit in high-resolution transmission electron microscopy

International Nuclear Information System (INIS)

Van Aert, S.; Chen, J.H.; Van Dyck, D.

2010-01-01

A widely used performance criterion in high-resolution transmission electron microscopy (HRTEM) is the information limit. It corresponds to the inverse of the maximum spatial object frequency that is linearly transmitted with sufficient intensity from the exit plane of the object to the image plane and is limited due to partial temporal coherence. In practice, the information limit is often measured from a diffractogram or from Young's fringes assuming a weak phase object scattering beyond the inverse of the information limit. However, for an aberration corrected electron microscope, with an information limit in the sub-angstrom range, weak phase objects are no longer applicable since they do not scatter sufficiently in this range. Therefore, one relies on more strongly scattering objects such as crystals of heavy atoms observed along a low index zone axis. In that case, dynamical scattering becomes important such that the non-linear and linear interaction may be equally important. The non-linear interaction may then set the experimental cut-off frequency observed in a diffractogram. The goal of this paper is to quantify both the linear and the non-linear information transfer in terms of closed form analytical expressions. Whereas the cut-off frequency set by the linear transfer can be directly related with the attainable resolution, information from the non-linear transfer can only be extracted using quantitative, model-based methods. In contrast to the historic definition of the information limit depending on microscope parameters only, the expressions derived in this paper explicitly incorporate their dependence on the structure parameters as well. In order to emphasize this dependence and to distinguish from the usual information limit, the expressions derived for the inverse cut-off frequencies will be referred to as the linear and non-linear structural information limit. The present findings confirm the well-known result that partial temporal coherence has

Electronic charge rearrangement at metal/organic interfaces induced by weak van der Waals interactions

Science.gov (United States)

Ferri, Nicola; Ambrosetti, Alberto; Tkatchenko, Alexandre

2017-07-01

Electronic charge rearrangements at interfaces between organic molecules and solid surfaces play a key role in a wide range of applications in catalysis, light-emitting diodes, single-molecule junctions, molecular sensors and switches, and photovoltaics. It is common to utilize electrostatics and Pauli pushback to control the interface electronic properties, while the ubiquitous van der Waals (vdW) interactions are often considered to have a negligible direct contribution (beyond the obvious structural relaxation). Here, we apply a fully self-consistent Tkatchenko-Scheffler vdW density functional to demonstrate that the weak vdW interactions can induce sizable charge rearrangements at hybrid metal/organic systems (HMOS). The complex vdW correlation potential smears out the interfacial electronic density, thereby reducing the charge transfer in HMOS, changes the interface work functions by up to 0.2 eV, and increases the interface dipole moment by up to 0.3 Debye. Our results suggest that vdW interactions should be considered as an additional control parameter in the design of hybrid interfaces with the desired electronic properties.

A Graphical User Interface to Generalized Linear Models in MATLAB

Directory of Open Access Journals (Sweden)

Peter Dunn

1999-07-01

Full Text Available Generalized linear models unite a wide variety of statistical models in a common theoretical framework. This paper discusses GLMLAB-software that enables such models to be fitted in the popular mathematical package MATLAB. It provides a graphical user interface to the powerful MATLAB computational engine to produce a program that is easy to use but with many features, including offsets, prior weights and user-defined distributions and link functions. MATLAB's graphical capacities are also utilized in providing a number of simple residual diagnostic plots.

Model of two-dimensional electron gas formation at ferroelectric interfaces

Energy Technology Data Exchange (ETDEWEB)

Aguado-Puente, P.; Bristowe, N. C.; Yin, B.; Shirasawa, R.; Ghosez, Philippe; Littlewood, P. B.; Artacho, Emilio

2015-07-01

The formation of a two-dimensional electron gas at oxide interfaces as a consequence of polar discontinuities has generated an enormous amount of activity due to the variety of interesting effects it gives rise to. Here, we study under what circumstances similar processes can also take place underneath ferroelectric thin films. We use a simple Landau model to demonstrate that in the absence of extrinsic screening mechanisms, a monodomain phase can be stabilized in ferroelectric films by means of an electronic reconstruction. Unlike in the LaAlO3/SrTiO3 heterostructure, the emergence with thickness of the free charge at the interface is discontinuous. This prediction is confirmed by performing first-principles simulations of free-standing slabs of PbTiO3. The model is also used to predict the response of the system to an applied electric field, demonstrating that the two-dimensional electron gas can be switched on and off discontinuously and in a nonvolatile fashion. Furthermore, the reversal of the polarization can be used to switch between a two-dimensional electron gas and a two-dimensional hole gas, which should, in principle, have very different transport properties. We discuss the possible formation of polarization domains and how such configuration competes with the spontaneous accumulation of free charge at the interfaces.

Active liquid/liquid interfaces: contributions of non linear optics and tensiometry

International Nuclear Information System (INIS)

Gassin, P.M.

2013-01-01

Liquid-liquid extraction processes are widely used in the industrial fields of selective separation. Despite its numerous applications, the microscopic mechanisms which occur during a liquid-liquid extraction processes are really unknown specially at the liquid/liquid interface. Thus, this work deals on the understanding of the phenomena which drive the mass transfer across a liquid/liquid interface. Two experimental techniques were used in this work: dynamic interfacial tension measurement and non-linear optical experiments. Along with the use of this experimental approach, a numerical model describing the mass transfer dynamic has been developed. This model works under the assumption that both diffusion and a chemical step describing adsorption and desorption processes contribute to the global transfer kinetics. Model systems of surfactant molecules, chromophore molecules and complexing molecule were investigated at liquid/liquid and air/liquid interface. Interfacial phenomena like adsorption, surface aggregation and ion complexing were studied. Finally, the methodology developed in this work was applied to studied an extractant molecule with potential industrial application. (author) [fr

Structures and electronics of buried and unburied semiconductor interfaces

International Nuclear Information System (INIS)

Kamiya, Itaru

2011-01-01

The structure of interfaces plays an important role in determining the electronic properties of semiconductor nanostructures. Here, such examples are shown and discussed using semiconductor nanostructures prepared by molecular beam epitaxy and colloidal synthesis.

Morphological and mechanical properties of polyamide 6/linear low density polyethylene blend compatibilized by electron-beam initiated mediation process

International Nuclear Information System (INIS)

Shin, Boo Young; Han, Do Hung

2014-01-01

The aim of this study was to compatibilize immiscible polyamide 6 (PA6)/linear low density polyethylene (LLDPE) blend by using electron-beam initiated mediation process. Glycidyl methacrylate (GMA) was chosen as a mediator for cross-copolymerization at the interface between PA6 and LLDPE. The exposure process was carried out to initiate cross-copolymerization by the medium of GMA at the interface between PA and LLDPE. The mixture of the PA6/LLDPE/GMA was prepared by using a twin-screw extruder, and then the mixture was exposed to electron-beam radiation at various doses at room temperature. To investigate the results of this compatibilization strategy, the morphological and mechanical properties of the blend were analyzed. Morphology study revealed that the diameters of the dispersion particles decreased and the interfacial adhesion increased with respect to irradiation doses. The elongation at break of the blends increases significantly with increasing irradiation dose up to 100 kGy while the tensile strength and the modulus increased nonlinearly with increasing irradiation dose. The reaction mechanisms of the mediation process with the GMA mediator at the interface between PA6 and LLDPE were estimated. - Highlights: • PA6/LLDPE blend was compatibilized by the electron-beam initiated mediation process. • Interfacial adhesion was significantly enhanced by the radiation initiated cross-copolymerization. • The elongation at break of blend irradiated at 100 kGy was 4 times higher than PA6. • The GMA as a mediator played a key role in the electron-beam initiated mediation process

Linear algebraic approach to electron-molecule collisions

International Nuclear Information System (INIS)

Schneider, B.I.; Collins, L.A.

1983-01-01

The various levels of sophistication of the linear algebraic method are discussed and its application to electron-molecule collisions of H 2 , N 2 LiH, LiF and HCl is described. 13 references, 2 tables

Performance review of thermionic electron gun developed for RF linear accelerators at RRCAT

International Nuclear Information System (INIS)

Wanmode, Yashwant; Mulchandani, J.; Reddy, T.S.; Bhisikar, A.; Singh, H.G.; Shrivastava, Purushottam

2015-01-01

RRCAT is engaged in development of RF electron linear accelerator for irradiation of industrial and agricultural products. Thermionic electron gun is primary source for this accelerator as beam current in the RF accelerator is modest and thermionic emission is most prevalent option for electron gun development. An electron gun has to meet high cathode emission capability, low filament power, good accessibility for cathode replacement and should provide short time for maintenance. Electron linear accelerator up to beam energy of 10 MeV require electron source of 45-50 keV beam energy and emission current of 1 A. Electron optics of gun and electron beam profile simulations were carried out using CST's particle tracking code and EGUN code. Triode type electron gun of cathode voltage 50 kV pulsed has been designed, developed and integrated with 10 MeV electron linear accelerators at RRCAT. Beam current of more than 600 mA has been measured with faraday cup in the test stand developed for characterizing the electron gun. Two accelerators one is imported and another one developed indigenously has been energized using this electron gun. Beam energy of 5-10 MeV has been achieved with beam current of 250-400 mA by integrating this electron gun with the linear accelerator. This paper reviews the performance of indigenously developed electron gun for both linear accelerators. (author)

A Simple and Practical Linear Algebra Library Interface with Static Size Checking

Directory of Open Access Journals (Sweden)

Akinori Abe

2015-12-01

Full Text Available Linear algebra is a major field of numerical computation and is widely applied. Most linear algebra libraries (in most programming languages do not statically guarantee consistency of the dimensions of vectors and matrices, causing runtime errors. While advanced type systems—specifically, dependent types on natural numbers—can ensure consistency among the sizes of collections such as lists and arrays, such type systems generally require non-trivial changes to existing languages and application programs, or tricky type-level programming. We have developed a linear algebra library interface that verifies the consistency (with respect to dimensions of matrix operations by means of generative phantom types, implemented via fairly standard ML types and module system. To evaluate its usability, we ported to it a practical machine learning library from a traditional linear algebra library. We found that most of the changes required for the porting could be made mechanically, and changes that needed human thought are minor.

Advanced understanding on electronic structure of molecular semiconductors and their interfaces

Science.gov (United States)

Akaike, Kouki

2018-03-01

Understanding the electronic structure of organic semiconductors and their interfaces is critical to optimizing functionalities for electronics applications, by rational chemical design and appropriate combination of device constituents. The unique electronic structure of a molecular solid is characterized as (i) anisotropic electrostatic fields that originate from molecular quadrupoles, (ii) interfacial energy-level lineup governed by simple electrostatics, and (iii) weak intermolecular interactions that make not only structural order but also energy distributions of the frontier orbitals sensitive to atmosphere and interface growth. This article shows an overview on these features with reference to the improved understanding of the orientation-dependent electronic structure, comprehensive mechanisms of molecular doping, and energy-level alignment. Furthermore, the engineering of ionization energy by the control of the electrostatic fields and work function of practical electrodes by contact-induced doping is briefly described for the purpose of highlighting how the electronic structure impacts the performance of organic devices.

Advanced Power Electronics Interfaces for Distributed Energy Workshop Summary: August 24, 2006, Sacramento, California

Energy Technology Data Exchange (ETDEWEB)

Treanton, B.; Palomo, J.; Kroposki, B.; Thomas, H.

2006-10-01

The Advanced Power Electronics Interfaces for Distributed Energy Workshop, sponsored by the California Energy Commission Public Interest Energy Research program and organized by the National Renewable Energy Laboratory, was held Aug. 24, 2006, in Sacramento, Calif. The workshop provided a forum for industry stakeholders to share their knowledge and experience about technologies, manufacturing approaches, markets, and issues in power electronics for a range of distributed energy resources. It focused on the development of advanced power electronic interfaces for distributed energy applications and included discussions of modular power electronics, component manufacturing, and power electronic applications.

Energy level alignment and electron transport through metal/organic contacts. From interfaces to molecular electronics

Energy Technology Data Exchange (ETDEWEB)

Abad, Enrique

2013-07-01

A new calculational approach to describing metal/organic interfaces. A valuable step towards a better understanding of molecular electronics. Nominated as an outstanding contribution by the Autonomous University of Madrid. In recent years, ever more electronic devices have started to exploit the advantages of organic semiconductors. The work reported in this thesis focuses on analyzing theoretically the energy level alignment of different metal/organic interfaces, necessary to tailor devices with good performance. Traditional methods based on density functional theory (DFT), are not appropriate for analyzing them because they underestimate the organic energy gap and fail to correctly describe the van der Waals forces. Since the size of these systems prohibits the use of more accurate methods, corrections to those DFT drawbacks are desirable. In this work a combination of a standard DFT calculation with the inclusion of the charging energy (U) of the molecule, calculated from first principles, is presented. Regarding the dispersion forces, incorrect long range interaction is substituted by a van der Waals potential. With these corrections, the C60, benzene, pentacene, TTF and TCNQ/Au(111) interfaces are analyzed, both for single molecules and for a monolayer. The results validate the induced density of interface states model.

Problems of linear electron (polaron) transport theory in semiconductors

CERN Document Server

Klinger, M I

1979-01-01

Problems of Linear Electron (Polaron) Transport Theory in Semiconductors summarizes and discusses the development of areas in electron transport theory in semiconductors, with emphasis on the fundamental aspects of the theory and the essential physical nature of the transport processes. The book is organized into three parts. Part I focuses on some general topics in the theory of transport phenomena: the general dynamical theory of linear transport in dissipative systems (Kubo formulae) and the phenomenological theory. Part II deals with the theory of polaron transport in a crystalline semicon

Design of a Flexible Hardware Interface for Multiple Remote Electronic practical Experiments of Virtual Laboratory

Directory of Open Access Journals (Sweden)

Farah Said

2012-03-01

Full Text Available The objective of this work is to present a new design of a Flexible Hardware Interface (FHI based on PID control techniques to use in a virtual laboratory. This flexible hardware interface allows the easy implementation of different and multiple remote electronic practical experiments for undergraduate engineering classes. This interface can be viewed as opened hardware architecture to easily develop simple or complex remote experiments in the electronic domain. The philosophy of the use of this interface can also be expanded to many other domains as optic experiments for instance. It is also demonstrated that software can be developed to enable remote measurements of electronic circuits or systems using only Web site Interface. Using standard browsers (such as Internet explorer, Firefox, Chrome or Safari, different students can have a remote access to different practical experiments at a time.

CAMAC interface for TPC data-acquisition electronics

International Nuclear Information System (INIS)

Sidman, S.; Olson, S.; Jared, R.

1983-06-01

The Time Projection Chamber (TPC) is a detector used for high-energy physics research at the Stanford PEP Accelerator. TPC requires about 17,000 channels of data acquisition, which samples on command the input to each channel at a 10 MHz rate. This high data rate is made possible by means of Charge Coupled Devices (CCDs), intelligent digitizers, and a sophisticated trigger system. The TPC-CAMAC interface described here was developed to allow experiments of smaller scale than the complete TPC to use the standard data acquisition portion of the TPC electronics, namely the amplifier, CCD and digitizer bins. These three bins, when properly interconnected and controlled by the interface control bin, form a transient digitizer with a depth of 455 samples and a maximum width of 256 channels per bin set

Effects of graphene defect on electronic structures of its interface with organic semiconductor

Energy Technology Data Exchange (ETDEWEB)

Yang, Qing-Dan; Wang, Chundong; Mo, Hin-Wai; Lo, Ming-Fai; Yuen, Muk Fung; Ng, Tsz-Wai, E-mail: tszwaing@cityu.edu.hk, E-mail: apcslee@cityu.edu.hk; Zhang, Wen-Jun; Lee, Chun-Sing, E-mail: tszwaing@cityu.edu.hk, E-mail: apcslee@cityu.edu.hk [Department of Physics and Materials Science, Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong (Hong Kong); Dou, Wei-Dong [Department of Physics and Materials Science, Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong (Hong Kong); Physics Department, Shaoxing University, Shaoxing 312000 (China); Tsang, Sai-Wing [Department of Physics and Materials Science, City University of Hong Kong (Hong Kong)

2015-03-30

Electronic structures of copper hexadecafluorophthalocyanine (F{sub 16}CuPc)/graphene with different defect density were studied with ultra-violet photoelectron spectroscopy. We showed that the charge transfer interaction and charge flow direction can be interestingly tuned by controlling the defect density of graphene through time-controlled H{sub 2} plasma treatment. By increasing the treatment time of H{sub 2} plasma from 30 s to 5 min, both the interface surface dipole and the electron transporting barrier at F{sub 16}CuPc/graphene interface are significantly reduced from 0.86 to 0.56 eV and 0.71 to 0.29 eV, respectively. These results suggested that graphene's defect control is a simple approach for tuning electronic properties of organic/graphene interfaces.

Finite element analyses of a linear-accelerator electron gun

Science.gov (United States)

Iqbal, M.; Wasy, A.; Islam, G. U.; Zhou, Z.

2014-02-01

Thermo-structural analyses of the Beijing Electron-Positron Collider (BEPCII) linear-accelerator, electron gun, were performed for the gun operating with the cathode at 1000 °C. The gun was modeled in computer aided three-dimensional interactive application for finite element analyses through ANSYS workbench. This was followed by simulations using the SLAC electron beam trajectory program EGUN for beam optics analyses. The simulations were compared with experimental results of the assembly to verify its beam parameters under the same boundary conditions. Simulation and test results were found to be in good agreement and hence confirmed the design parameters under the defined operating temperature. The gun is operating continuously since commissioning without any thermal induced failures for the BEPCII linear accelerator.

Finite element analyses of a linear-accelerator electron gun

Energy Technology Data Exchange (ETDEWEB)

Iqbal, M., E-mail: muniqbal.chep@pu.edu.pk, E-mail: muniqbal@ihep.ac.cn [Centre for High Energy Physics, University of the Punjab, Lahore 45590 (Pakistan); Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049 (China); Wasy, A. [Department of Mechanical Engineering, Changwon National University, Changwon 641773 (Korea, Republic of); Islam, G. U. [Centre for High Energy Physics, University of the Punjab, Lahore 45590 (Pakistan); Zhou, Z. [Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049 (China)

2014-02-15

Thermo-structural analyses of the Beijing Electron-Positron Collider (BEPCII) linear-accelerator, electron gun, were performed for the gun operating with the cathode at 1000 °C. The gun was modeled in computer aided three-dimensional interactive application for finite element analyses through ANSYS workbench. This was followed by simulations using the SLAC electron beam trajectory program EGUN for beam optics analyses. The simulations were compared with experimental results of the assembly to verify its beam parameters under the same boundary conditions. Simulation and test results were found to be in good agreement and hence confirmed the design parameters under the defined operating temperature. The gun is operating continuously since commissioning without any thermal induced failures for the BEPCII linear accelerator.

Finite element analyses of a linear-accelerator electron gun

International Nuclear Information System (INIS)

Iqbal, M.; Wasy, A.; Islam, G. U.; Zhou, Z.

2014-01-01

Thermo-structural analyses of the Beijing Electron-Positron Collider (BEPCII) linear-accelerator, electron gun, were performed for the gun operating with the cathode at 1000 °C. The gun was modeled in computer aided three-dimensional interactive application for finite element analyses through ANSYS workbench. This was followed by simulations using the SLAC electron beam trajectory program EGUN for beam optics analyses. The simulations were compared with experimental results of the assembly to verify its beam parameters under the same boundary conditions. Simulation and test results were found to be in good agreement and hence confirmed the design parameters under the defined operating temperature. The gun is operating continuously since commissioning without any thermal induced failures for the BEPCII linear accelerator

Electronic structure at metal-smiconductor surfaces and interfaces: effects of disorder

International Nuclear Information System (INIS)

Rodrigues, D.E.

1988-01-01

The main concern of this work is the study of the electronic structure at metal and semiconductor surfaces or interfaces, with special emphasis in the effects of disorder and local microstructure upon them. Various factors which determine this structure are presented and those of central importance are identified. A model that allows the efficient and exact calculation of the local density of states at disordered interfaces is described. This model is based on a tight-binding hamiltonian that has enough flexibility so as to allow an adequate description of real solids. The disorder is taken into account by including stochastic perturbations in the diagonal elements of the hamiltonian in a site orbital basis. These perturbations are taken at each layer from a lorentzian probability distribution. An exact expression for the calculation of the local density of states is derived and applied to a model surface built up from a type orbitals arranged in a simple cubic lattice. The effects of disorder on the local densities of states and on the existence of surface Tamm states are studied. The properties of the electronic states with this kind of model of disorder are considered. The self-consistent calculation of the electronic structure of the Si(111) - (1x1) surface is presented. The effects of disorder on the electronic properties such as the work function or the position of surface states within the gap are evaluated. The surface of the metallic compound NiSi 2 is also treated. The first self-consistent calculation of the electronic structure of its (111) surface is presented. The electronic structure of the Si/NiSi 2 (111) interfaces is calculated for the two types of junctions that can be grown experimentally. The origin of the difference between the Schottky barrier heights at both interfaces is discussed. The results are compared with available experimental data. The implications of this calculation on existing theories about the microscopic mechanism that causes

Quasi-linear analysis of the extraordinary electron wave destabilized by runaway electrons

Energy Technology Data Exchange (ETDEWEB)

Pokol, G. I.; Kómár, A.; Budai, A. [Department of Nuclear Techniques, Budapest University of Technology and Economics, Budapest (Hungary); Stahl, A.; Fülöp, T. [Department of Applied Physics, Chalmers University of Technology, Göteborg (Sweden)

2014-10-15

Runaway electrons with strongly anisotropic distributions present in post-disruption tokamak plasmas can destabilize the extraordinary electron (EXEL) wave. The present work investigates the dynamics of the quasi-linear evolution of the EXEL instability for a range of different plasma parameters using a model runaway distribution function valid for highly relativistic runaway electron beams produced primarily by the avalanche process. Simulations show a rapid pitch-angle scattering of the runaway electrons in the high energy tail on the 100–1000 μs time scale. Due to the wave-particle interaction, a modification to the synchrotron radiation spectrum emitted by the runaway electron population is foreseen, exposing a possible experimental detection method for such an interaction.

Molecular Computational Investigation of Electron Transfer Kinetics across Cytochrome-Iron Oxide Interfaces

International Nuclear Information System (INIS)

Kerisit, Sebastien N.; Rosso, Kevin M.; Dupuis, Michel; Valiev, Marat

2007-01-01

The interface between electron transfer proteins such as cytochromes and solid phase mineral oxides is central to the activity of dissimilatory-metal reducing bacteria. A combination of potential-based molecular dynamics simulations and ab initio electronic structure calculations are used in the framework of Marcus' electron transfer theory to compute elementary electron transfer rates from a well-defined cytochrome model, namely the small tetraheme cytochrome (STC) from Shewanella oneidensis, to surfaces of the iron oxide mineral hematite (a-Fe2O3). Room temperature molecular dynamics simulations show that an isolated STC molecule favors surface attachment via direct contact of hemes I and IV at the poles of the elongated axis, with electron transfer distances as small as 9 Angstroms. The cytochrome remains attached to the mineral surface in the presence of water and shows limited surface diffusion at the interface. Ab initio electronic coupling matrix element (VAB) calculations of configurations excised from the molecular dynamics simulations reveal VAB values ranging from 1 to 20 cm-1, consistent with nonadiabaticity. Using these results, together with experimental data on the redox potential of hematite and hemes in relevant cytochromes and calculations of the reorganization energy from cluster models, we estimate the rate of electron transfer across this model interface to range from 1 to 1000 s-1 for the most exothermic driving force considered in this work, and from 0.01 to 20 s-1 for the most endothermic. This fairly large range of electron transfer rates highlights the sensitivity of the rate upon the electronic coupling matrix element, which is in turn dependent on the fluctuations of the heme configuration at the interface. We characterize this dependence using an idealized bis-imidazole heme to compute from first principles the VAB variation due to porphyrin ring orientation, electron transfer distance, and mineral surface termination. The electronic

Tailoring the graphene/silicon carbide interface for monolithic wafer-scale electronics.

Science.gov (United States)

Hertel, S; Waldmann, D; Jobst, J; Albert, A; Albrecht, M; Reshanov, S; Schöner, A; Krieger, M; Weber, H B

2012-07-17

Graphene is an outstanding electronic material, predicted to have a role in post-silicon electronics. However, owing to the absence of an electronic bandgap, graphene switching devices with high on/off ratio are still lacking. Here in the search for a comprehensive concept for wafer-scale graphene electronics, we present a monolithic transistor that uses the entire material system epitaxial graphene on silicon carbide (0001). This system consists of the graphene layer with its vanishing energy gap, the underlying semiconductor and their common interface. The graphene/semiconductor interfaces are tailor-made for ohmic as well as for Schottky contacts side-by-side on the same chip. We demonstrate normally on and normally off operation of a single transistor with on/off ratios exceeding 10(4) and no damping at megahertz frequencies. In its simplest realization, the fabrication process requires only one lithography step to build transistors, diodes, resistors and eventually integrated circuits without the need of metallic interconnects.

Non-linear phenomena in electronic systems consisting of coupled single-electron oscillators

International Nuclear Information System (INIS)

Kikombo, Andrew Kilinga; Hirose, Tetsuya; Asai, Tetsuya; Amemiya, Yoshihito

2008-01-01

This paper describes non-linear dynamics of electronic systems consisting of single-electron oscillators. A single-electron oscillator is a circuit made up of a tunneling junction and a resistor, and produces simple relaxation oscillation. Coupled with another, single electron oscillators exhibit complex behavior described by a combination of continuous differential equations and discrete difference equations. Computer simulation shows that a double-oscillator system consisting of two coupled oscillators produces multi-periodic oscillation with a single attractor, and that a quadruple-oscillator system consisting of four oscillators also produces multi-periodic oscillation but has a number of possible attractors and takes one of them determined by initial conditions

Role of interface states on electron transport in a-Si:H/nc-Si:H multilayer structures

Science.gov (United States)

Yadav, Asha; Kumari, Juhi; Agarwal, Pratima

2018-05-01

In this paper we report, I-V characteristic of a-Si:H/nc-Si:H multilayer structures in lateral as well as transverse direction. In lateral geometry, where the interfaces are parallel to the direction of electronic transport, residual photo conductivity (persistent photoconductivity) is observed after the light was turned off. On the other hand, in transverse geometry, where interfaces are along the direction of electronic transport, the space charge limited currents are affected and higher density of states is obtained. The PPC was more in the structures where numbers of such interface were more. These results have been understood in terms of the charge carriers trapped at the interface, which influence the electronic transport.

Design of memristive interface between electronic neurons

Science.gov (United States)

Gerasimova, S. A.; Mikhaylov, A. N.; Belov, A. I.; Korolev, D. S.; Guseinov, D. V.; Lebedeva, A. V.; Gorshkov, O. N.; Kazantsev, V. B.

2018-05-01

Nonlinear dynamics of two electronic oscillators coupled via a memristive device has been investigated. Such model mimics the interaction between synaptically coupled brain neurons with the memristive device imitating neuron axon. The synaptic connection is provided by the adaptive behavior of memristive device that changes its resistance under the action of spike-like activity. Mathematical model of such a memristive interface has been developed to describe and predict the experimentally observed regularities of forced synchronization of neuron-like oscillators.

Dragon-I Linear Induction Electron Accelerator

International Nuclear Information System (INIS)

Ding Bonan; Deng Jianjun; Wang Huacen; Cheng Nian'an; Dai Guangsen; Zhang Linwen; Liu Chengjun; Zhang Wenwei; Li Jin; Zhang Kaizhi

2005-01-01

Dragon-I is a linear induction electron accelerator. This facility consists of a 3.6 MeV injector, 38 meter beam transport line and 16 MeV induction accelerator powered by high voltage generators, including 8 Marx generators and 48 Blumlein lines. This paper describes the physics design, development and experimental results of Dragon-I. The key technology is analyzed in the accelerator development, and the design requirements and operation of the major subsystems are presented. The experimental results show Dragon-I generates an 18-20 MeV, 2.5 kA, 70 ns electron beam. The X-ray spot size is about 1.2 mm and dose level about 0.103 C/kg at 1 meter. (authors)

Effect of interface of electronics devices constructed with different materials to X-ray

International Nuclear Information System (INIS)

Mu Weibing; Chen Panxun

2003-01-01

The behavior of X-ray nearby interface which is constructed with different materials is introduced in this paper. And the affect to electronics devices of this behavior is analyzed, the affect factors of four interfaces are calculated by Monte-Carlo method

Role of coherence and delocalization in photo-induced electron transfer at organic interfaces

Science.gov (United States)

Abramavicius, V.; Pranculis, V.; Melianas, A.; Inganäs, O.; Gulbinas, V.; Abramavicius, D.

2016-09-01

Photo-induced charge transfer at molecular heterojunctions has gained particular interest due to the development of organic solar cells (OSC) based on blends of electron donating and accepting materials. While charge transfer between donor and acceptor molecules can be described by Marcus theory, additional carrier delocalization and coherent propagation might play the dominant role. Here, we describe ultrafast charge separation at the interface of a conjugated polymer and an aggregate of the fullerene derivative PCBM using the stochastic Schrödinger equation (SSE) and reveal the complex time evolution of electron transfer, mediated by electronic coherence and delocalization. By fitting the model to ultrafast charge separation experiments, we estimate the extent of electron delocalization and establish the transition from coherent electron propagation to incoherent hopping. Our results indicate that even a relatively weak coupling between PCBM molecules is sufficient to facilitate electron delocalization and efficient charge separation at organic interfaces.

Subthreshold radiation-induced processes in the bulk and on surfaces and interfaces of solids

International Nuclear Information System (INIS)

Itoh, N.

1998-01-01

A review is given on the processes induced under irradiation by electronic encounters and by elastic encounters below the knock-on threshold. It is pointed out that electronic encounters cause bond scission that results in defect formation and sputtering in a variety of materials. The conditions for generation of permanent radiation-induced process as a consequence of electronic encounters are critically examined. Two critical issues are localization of electronic excitation energy and energetics. Self-trapping of excitons is one way of localization; otherwise defects are involved in localization and therefore in radiation-induced processes (RIP) by electronic excitation. Arguments on energetics indicate presence of linear and nonlinear electronic process with respect to the density of excitation. The registration of energetic heavy-ion tracks is explained in terms of non-linear electronic processes. The difference in the processes in the bulk, on surfaces and at interfaces is critically discussed. The possible contribution of subthreshold elastic encounters to thermodynamically driven interface reaction is also discussed. (orig.)

Linear-algebraic approach to electronic excitation of atoms and molecules by electron impact

International Nuclear Information System (INIS)

Collins, L.A.; Schneider, B.I.

1983-01-01

A linear-algebraic method, based on an integral equations formulation, is applied to the excitation of atoms and molecules by electron impact. Various schemes are devised for treating the one-electron terms that sometimes cause instabilities when directly incorporated into the solution matrix. These include introducing Lagrange undetermined multipliers and correlation terms. Good agreement between the method and other computational techniques is obtained for electron scattering for hydrogenic and Li-like atomic ions and for H 2 + in two- to five-state close-coupling calculations

Electronic structure of graphene beyond the linear dispersion regime

OpenAIRE

POWER, STEPHEN; FERREIRA, MAURO

2011-01-01

PUBLISHED Among the many interesting features displayed by graphene, one of the most attractive is the simplicity with which its electronic structure can be described. The study of its physical properties is significantly simplified by the linear dispersion relation of electrons in a narrow range around the Fermi level. Unfortunately, the mathematical simplicity of graphene electrons is limited only to this narrow energy region and is not very practical when dealing with problems that invo...

Electron drag in ferromagnetic structures separated by an insulating interface

Science.gov (United States)

Kozub, V. I.; Muradov, M. I.; Galperin, Y. M.

2018-06-01

We consider electron drag in a system of two ferromagnetic layers separated by an insulating interface. The source of it is expected to be magnon-electron interactions. Namely, we assume that the external voltage is applied to the "active" layer stimulating electric current through this layer. In its turn, the scattering of the current-carrying electrons by magnons leads to a magnon drag current within this layer. The 3-magnons interactions between magnons in the two layers (being of non-local nature) lead to magnon drag within the "passive" layer which, correspondingly, produce electron drag current via processes of magnon-electron scattering. We estimate the drag current and compare it to the phonon-induced one.

Predicting the Rate Constant of Electron Tunneling Reactions at the CdSe-TiO2 Interface.

Science.gov (United States)

Hines, Douglas A; Forrest, Ryan P; Corcelli, Steven A; Kamat, Prashant V

2015-06-18

Current interest in quantum dot solar cells (QDSCs) motivates an understanding of the electron transfer dynamics at the quantum dot (QD)-metal oxide (MO) interface. Employing transient absorption spectroscopy, we have monitored the electron transfer rate (ket) at this interface as a function of the bridge molecules that link QDs to TiO2. Using mercaptoacetic acid, 3-mercaptopropionic acid, 8-mercaptooctanoic acid, and 16-mercaptohexadecanoic acid, we observe an exponential attenuation of ket with increasing linker length, and attribute this to the tunneling of the electron through the insulating linker molecule. We model the electron transfer reaction using both rectangular and trapezoidal barrier models that have been discussed in the literature. The one-electron reduction potential (equivalent to the lowest unoccupied molecular orbital) of each molecule as determined by cyclic voltammetry (CV) was used to estimate the effective barrier height presented by each ligand at the CdSe-TiO2 interface. The electron transfer rate (ket) calculated for each CdSe-ligand-TiO2 interface using both models showed the results in agreement with the experimentally determined trend. This demonstrates that electron transfer between CdSe and TiO2 can be viewed as electron tunneling through a layer of linking molecules and provides a useful method for predicting electron transfer rate constants.

Lattice structures and electronic properties of MO/MoSe2 interface from first-principles calculations

Science.gov (United States)

Zhang, Yu; Tang, Fu-Ling; Xue, Hong-Tao; Lu, Wen-Jiang; Liu, Jiang-Fei; Huang, Min

2015-02-01

Using first-principles plane-wave calculations within density functional theory, we theoretically studied the atomic structure, bonding energy and electronic properties of the perfect Mo (110)/MoSe2 (100) interface with a lattice mismatch less than 4.2%. Compared with the perfect structure, the interface is somewhat relaxed, and its atomic positions and bond lengths change slightly. The calculated interface bonding energy is about -1.2 J/m2, indicating that this interface is very stable. The MoSe2 layer on the interface has some interface states near the Fermi level, the interface states are mainly caused by Mo 4d orbitals, while the Se atom almost have no contribution. On the interface, Mo-5s and Se-4p orbitals hybridize at about -6.5 to -5.0 eV, and Mo-4d and Se-4p orbitals hybridize at about -5.0 to -1.0 eV. These hybridizations greatly improve the bonding ability of Mo and Se atom in the interface. By Bader charge analysis, we find electron redistribution near the interface which promotes the bonding of the Mo and MoSe2 layer.

Survey on neutron production by electron beam from high power CW electron linear accelerator

International Nuclear Information System (INIS)

Toyama, S.

1999-04-01

In Japan Nuclear Cycle Development Institute, the development of high current CW electron linear accelerator is in progress. It is possible for an accelerator to produce neutrons by means of a spallation and photo nuclear reactions. Application of neutron beam produced by bremsstrahlung is one of ways of the utilization for high current electron accelerator. It is actual that many electron linear accelerators which maximum energy is higher than a few hundreds MeV are used as neutron sources. In this report, an estimate of neutron production is evaluated for high current CW electron linear accelerator. The estimate is carried out by 10 MeV beam which is maximum energy limited from the regulation and rather low for neutron production. Therefore, the estimate is also done by 17 and 35 MeV beam which is possible to be accelerated. Beryllium is considered as a target for lower electron energy in addition to Lead target for higher energy, because Beryllium has low threshold energy for neutron production. The evaluation is carried out in account of the target thickness optimized by the radiation length and neutron cross section reducing the energy loss for both of electron and neutron, so as to get the maximum number of neutrons. The result of the calculations shows neutron numbers 1.9 x 10 10 , 6.1 x 10 13 and 4.8 x 10 13 (n/s), respectively, for 10, 17, and 35 MeV with low duty. The thermal removal from the target is one of critical points. The additional shielding and cooling system is necessary in order to endure radiation. A comparison with other facilities are also carried out. The estimate of neutron numbers suggests the possibility to be applied for neutron radiography and measurement of nuclear data by means of Lead spectrometer, for example. (author)

Linear electrostatic waves in a three-component electron-positron-ion plasma

Energy Technology Data Exchange (ETDEWEB)

Mugemana, A., E-mail: mugemanaa@gmail.com; Moolla, S. [School of Chemistry and Physics, University of KwaZulu-Natal, Durban 4000 (South Africa); Lazarus, I. J. [Department of Mathematics, Statistics and Physics, Durban University of Technology, Durban 4000 (South Africa)

2014-12-15

Analytical linear electrostatic waves in a magnetized three-component electron-positron-ion plasma are studied in the low-frequency limit. By using the continuity and momentum equations with Poisson's equation, the dispersion relation for the electron-positron-ion plasma consisting of cool ions, and hot Boltzmann electrons and positrons is derived. In the linear regime, the propagation of two possible modes and their evolution are studied. In the cases of parallel and perpendicular propagation, it is shown that these two possible modes are always stable. The present investigation contributes to nonlinear propagation of electrostatic waves in space and the laboratory.

Study of cell cycle and apoptosis after radiation with electron linear accelerator injury

International Nuclear Information System (INIS)

Xu Lan; Zhou Yinghui; Shi Ning; Peng Miao; Wu Shiliang

2002-01-01

Purpose: To determine the cell cycle and apoptosis of the injured cells after radiation with the electron linear accelerator. Methods: NIH 3T3 cells were irradiated by the radiation with the electron linear accelerator. In the experiment the condition of the cell cycle and apoptosis of the injured cells were measured. The expression of p53 was also tested. Results: After exposure to radiation, the number of apoptotic cells as well as the expression of p53 increased. Conclusion: The electron linear accelerator radiation injury can induce cell apoptosis

Multipole surface solitons supported by the interface between linear media and nonlocal nonlinear media

International Nuclear Information System (INIS)

Shi, Zhiwei; Li, Huagang; Guo, Qi

2012-01-01

We address multipole surface solitons occurring at the interface between a linear medium and a nonlocal nonlinear medium. We show the impact of nonlocality, the propagation constant, and the linear index difference of two media on the properties of the surface solitons. We find that there exist a threshold value of the degree of the nonlocality at the same linear index difference of two media, only when the degree of the nonlocality goes beyond the value, the multipole surface solitons can be stable. -- Highlights: ► We show the impact of nonlocality and the linear index difference of two media on the properties of the surface solitons. ► For the surface solitons, only when the degree of the nonlocality goes beyond a threshold value, they can be stable. ► The number of poles and the index difference of two media can all influence the threshold value.

Tissue-electronics interfaces: from implantable devices to engineered tissues

Science.gov (United States)

Feiner, Ron; Dvir, Tal

2018-01-01

Biomedical electronic devices are interfaced with the human body to extract precise medical data and to interfere with tissue function by providing electrical stimuli. In this Review, we outline physiologically and pathologically relevant tissue properties and processes that are important for designing implantable electronic devices. We summarize design principles for flexible and stretchable electronics that adapt to the mechanics of soft tissues, such as those including conducting polymers, liquid metal alloys, metallic buckling and meandering architectures. We further discuss technologies for inserting devices into the body in a minimally invasive manner and for eliminating them without further intervention. Finally, we introduce the concept of integrating electronic devices with biomaterials and cells, and we envision how such technologies may lead to the development of bionic organs for regenerative medicine.

Morphology and electronic properties of the pentacene on cobalt interface

NARCIS (Netherlands)

Tiba, M. V.; Koopmans, B.; Jonkman, Harry; de Jonge, W.J.M.

2006-01-01

In this paper, we report the structural and electronic properties of pentacene thin films grown on a polycrystalline Co film using atomic force microscopy and ultraviolet photoemission spectroscopy (UPS), respectively. Investigation of this type of interface is of importance for the engineering of

Hot electron attenuation of direct and scattered carriers across an epitaxial Schottky interface

NARCIS (Netherlands)

Parui, S.; Klandermans, P. S.; Venkatesan, S.; Scheu, C.; Banerjee, T.

2013-01-01

Hot electron transport of direct and scattered carriers across an epitaxial NiSi2/n-Si(111) interface, for different NiSi2 thickness, is studied using ballistic electron emission microscopy (BEEM). We find the BEEM transmission for the scattered hot electrons in NiSi2 to be significantly lower than

Z-score linear discriminant analysis for EEG based brain-computer interfaces.

Directory of Open Access Journals (Sweden)

Rui Zhang

Full Text Available Linear discriminant analysis (LDA is one of the most popular classification algorithms for brain-computer interfaces (BCI. LDA assumes Gaussian distribution of the data, with equal covariance matrices for the concerned classes, however, the assumption is not usually held in actual BCI applications, where the heteroscedastic class distributions are usually observed. This paper proposes an enhanced version of LDA, namely z-score linear discriminant analysis (Z-LDA, which introduces a new decision boundary definition strategy to handle with the heteroscedastic class distributions. Z-LDA defines decision boundary through z-score utilizing both mean and standard deviation information of the projected data, which can adaptively adjust the decision boundary to fit for heteroscedastic distribution situation. Results derived from both simulation dataset and two actual BCI datasets consistently show that Z-LDA achieves significantly higher average classification accuracies than conventional LDA, indicating the superiority of the new proposed decision boundary definition strategy.

Rotational total skin electron irradiation with a linear accelerator

Science.gov (United States)

Evans, Michael D.C.; Devic, Slobodan; Parker, William; Freeman, Carolyn R.; Roberge, David; Podgorsak, Ervin B.

2008-01-01

The rotational total skin electron irradiation (RTSEI) technique at our institution has undergone several developments over the past few years. Replacement of the formerly used linear accelerator has prompted many modifications to the previous technique. With the current technique, the patient is treated with a single large field while standing on a rotating platform, at a source‐to‐surface distance of 380 cm. The electron field is produced by a Varian 21EX linear accelerator using the commercially available 6 MeV high dose rate total skin electron mode, along with a custom‐built flattening filter. Ionization chambers, radiochromic film, and MOSFET (metal oxide semiconductor field effect transistor) detectors have been used to determine the dosimetric properties of this technique. Measurements investigating the stationary beam properties, the effects of full rotation, and the dose distributions to a humanoid phantom are reported. The current treatment technique and dose regimen are also described. PACS numbers: 87.55.ne, 87.53.Hv, 87.53.Mr

Electromagnetic surface waves at the interface of a relativistic electron beam with vacuum

International Nuclear Information System (INIS)

Shoucri, M.M.; Gagne, R.R.J.

1977-01-01

The dispersion relation for electromagnetic surface waves propagating at the interface between a relativistic electron beam and vacuum is derived. The excitation of surface modes in a plasma at rest by a relativistic electron beam is discussed

Matching beams on photon/electron linear accelerators

International Nuclear Information System (INIS)

Oliver, L.; Vial, P.; Hunt, P.

2004-01-01

Full text: There are a number of obvious reasons to match megavoltage X-ray and electron beams for clinical purposes. If two dual-purpose X-ray/electron linear accelerators are of the same design and manufacturer, then this might be possible. The issue is however whether the beams can be matched sufficiently close to be considered the same for patient treatments and planning data for dose calculation purposes. If successfully achieved, there are significant advantages in reduced commissioning time, less work in planning and flexibility in the treatment of patients between the two treatment machines. We have investigated matching a new Varian Clinac 21EX with our 1993 Varian Clinac 2100 C/D. A Varian Clinac 1800 was the first linear accelerator installed at RNSH in 1987. When the Clinac 2100 C/D was installed in 1993, we attempted to match all the X-ray and electron beams with the original Clinac 1800 physical data. The X-ray beam characteristics were satisfactory but the electron beams were not sufficiently compatible for planning or patient treatment purposes. A different designed scattering foil and electron applicator were the cause of the different electron beam physical characteristics between the two models. In replacing the Clinac 1800 with the Clinac 21EX, we have used the original 1993 data of the Clinac 2100 C/D as the gold standard to aim for. Initial measurements during acceptance tests showed that all beams satisfied the manufacturer's specification. The energy was then matched to the existing clinical physics data by adjusting the bending magnet power supply and re-tuning the accelerator. This involved matching % depth dose and the corresponding ratio of 10 and 20 cm % depth dose ratio for 6MV and 18 MV X-ray beams. For 6, 9, 12, 16 and 20 MeV electron beams the normal physical parameters of depth of maximum (R max ), the practical range (R p ), the depth of 50% (R 50 ), the slope (G), the average energy at the surface (E 0 ) and the % photon

A Strategy to Enhance the Efficiency of Quantum Dot-Sensitized Solar Cells by Decreasing Electron Recombination with Polyoxometalate/TiO2 as the Electronic Interface Layer.

Science.gov (United States)

Chen, Li; Chen, Weilin; Li, Jianping; Wang, Jiabo; Wang, Enbo

2017-07-21

Electron recombination occurring at the TiO 2 /quantum dot sensitizer/electrolyte interface is the key reason for hindering further efficiency improvements to quantum dot sensitized solar cells (QDSCs). Polyoxometalate (POM) can act as an electron-transfer medium to decrease electron recombination in a photoelectric device owing to its excellent oxidation/reduction properties and thermostability. A POM/TiO 2 electronic interface layer prepared by a simple layer-by-layer self-assembly method was added between fluorine-doped tin oxide (FTO) and mesoporous TiO 2 in the photoanode of QDSCs, and the effect on the photovoltaic performance was systematically investigated. Photovoltaic experimental results and the electron transmission mechanism show that the POM/TiO 2 electronic interface layer in the QDSCs can clearly suppress electron recombination, increase the electron lifetime, and result in smoother electron transmission. In summary, the best conversion efficiency of QDSCs with POM/TiO 2 electronic interface layers increases to 8.02 %, which is an improvement of 25.1 % compared with QDSCs without POM/TiO 2 . This work first builds an electron-transfer bridge between FTO and the quantum dot sensitizer and paves the way for further improved efficiency of QDSCs. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Development and implementation of an electronic interface for complex clinical laboratory instruments without a vendor-provided data transfer interface

Directory of Open Access Journals (Sweden)

Gary E Blank

2011-01-01

Full Text Available Background: Clinical pathology laboratories increasingly use complex instruments that incorporate chromatographic separation, e.g. liquid chromatography, with mass detection for rapid identification and quantification of biochemicals, biomolecules, or pharmaceuticals. Electronic data management for these instruments through interfaces with laboratory information systems (LIS is not generally available from the instrument manufacturers or LIS vendors. Unavailability of a data management interface is a limiting factor in the use of these instruments in clinical laboratories where there is a demand for high-throughput assays with turn-around times that meet patient care needs. Materials and Methods: Professional society guidelines for design and transfer of data between instruments and LIS were used in the development and implementation of the interface. File transfer protocols and support utilities were written to facilitate transfer of information between the instruments and the LIS. An interface was created for liquid chromatography-tandem mass spectroscopy and inductively coupled plasma-mass spectroscopy instruments to manage data in the Sunquest® LIS. Results: Interface validation, implementation and data transfer fidelity as well as training of technologists for use of the interface was performed by the LIS group. The technologists were familiarized with the data verification process as a part of the data management protocol. The total time for the technologists for patient/control sample data entry, assay results data transfer, and results verification was reduced from approximately 20 s per sample to <1 s per sample. Sample identification, results data entry errors, and omissions were eliminated. There was electronic record of the technologist performing the assay runs and data management. Conclusions: Development of a data management interface for complex, chromatography instruments in clinical laboratories has resulted in rapid, accurate

Syringe-Injectable Electronics with a Plug-and-Play Input/Output Interface.

Science.gov (United States)

Schuhmann, Thomas G; Yao, Jun; Hong, Guosong; Fu, Tian-Ming; Lieber, Charles M

2017-09-13

Syringe-injectable mesh electronics represent a new paradigm for brain science and neural prosthetics by virtue of the stable seamless integration of the electronics with neural tissues, a consequence of the macroporous mesh electronics structure with all size features similar to or less than individual neurons and tissue-like flexibility. These same properties, however, make input/output (I/O) connection to measurement electronics challenging, and work to-date has required methods that could be difficult to implement by the life sciences community. Here we present a new syringe-injectable mesh electronics design with plug-and-play I/O interfacing that is rapid, scalable, and user-friendly to nonexperts. The basic design tapers the ultraflexible mesh electronics to a narrow stem that routes all of the device/electrode interconnects to I/O pads that are inserted into a standard zero insertion force (ZIF) connector. Studies show that the entire plug-and-play mesh electronics can be delivered through capillary needles with precise targeting using microliter-scale injection volumes similar to the standard mesh electronics design. Electrical characterization of mesh electronics containing platinum (Pt) electrodes and silicon (Si) nanowire field-effect transistors (NW-FETs) demonstrates the ability to interface arbitrary devices with a contact resistance of only 3 Ω. Finally, in vivo injection into mice required only minutes for I/O connection and yielded expected local field potential (LFP) recordings from a compact head-stage compatible with chronic studies. Our results substantially lower barriers for use by new investigators and open the door for increasingly sophisticated and multifunctional mesh electronics designs for both basic and translational studies.

A study of Al/Si interface by photoemission, Auger electron yield and Auger electron spectroscopies

International Nuclear Information System (INIS)

Kobayashi, K.L.I.; Barth, J.; Gerken, F.; Kunz, C.; Deutsches Elektronen-Synchrotron

1980-06-01

Photoemission, Auger electron yield and Auger electron spectra were observed for Al/Si(111) interfaces with various Al coverage prepared by successive deposition using a molecular beam source. The Al 3p derived states are introduced at around the top of the valence band by the Al coverage of less than one monolayer. The Al surface layer behaves as a 'metal' and the Fermi level is stabilized in the Al 3p derived states at about 0.3 eV above the top of the valence band of Si. The Schottky barrier height in this stage is about 0.8 eV and further increase in Al coverage does not change the barrier height. A covalent bonding model of the Al/Si interface based on the experimental results is proposed. The present result favors the on-top geometry of Al atoms on Si(111) surface among the geometries used in the pseudopotential calculation by Zhang and Schlueter. (orig.)

Generalized linear elastic fracture mechanics: an application to a crack touching the bimaterial interface

Czech Academy of Sciences Publication Activity Database

Náhlík, Luboš; Šestáková, L.; Hutař, Pavel; Knésl, Zdeněk

2011-01-01

Roč. 452-453, - (2011), s. 445-448 ISSN 1013-9826 R&D Projects: GA AV ČR(CZ) KJB200410803; GA ČR GA101/09/1821 Institutional research plan: CEZ:AV0Z20410507 Keywords : generalized stress intensity factor * bimaterial interface * composite materials * strain energy density factor * fracture criterion * generalized linear elastic fracture mechanics Subject RIV: JL - Materials Fatigue, Friction Mechanics

A modified linear algebraic approach to electron scattering using cubic splines

International Nuclear Information System (INIS)

Kinney, R.A.

1986-01-01

A modified linear algebraic approach to the solution of the Schrodiner equation for low-energy electron scattering is presented. The method uses a piecewise cubic-spline approximation of the wavefunction. Results in the static-potential and the static-exchange approximations for e - +H s-wave scattering are compared with unmodified linear algebraic and variational linear algebraic methods. (author)

Multistage linear electron acceleration using pulsed transmission lines

International Nuclear Information System (INIS)

Miller, R.B.; Prestwich, K.R.; Poukey, J.W.; Epstein, B.G.; Freeman, J.R.; Sharpe, A.W.; Tucker, W.K.; Shope, S.L.

1981-01-01

A four-stage linear electron accelerator is described which uses pulsed radial transmission lines as the basic accelerating units. An annular electron beam produced by a foilless diode is guided through the accelerator by a strong axial magnetic field. Synchronous firing of the injector and the acccelerating modules is accomplished with self-breaking oil switches. The device has accelerated beam currents of 25 kA to kinetic energies of 9 MV, with 90% current transport efficiency. The average accelerating gradient is 3 MV/m

Study of loading by beam of dual-resonator structure of linear electron accelerator

International Nuclear Information System (INIS)

Milovanov, O.S.; Smirnov, I.A.

1988-01-01

Loading by the beam of the accelerating structure of an Argus dual-resonator linear electron accelerator with a kinetic energy of ∼ 1 MeV and a pulsed beam current of up to 0.5 A is studied experimentally. It is shown that the conditions for stable single-frequency operation of the magnetron are disrupted and the acceleration process is cut off at certain electron-beam currents. Experimental curves of the maximum beam current and maximum electron efficiency of the Argus linear electron accelerator as functions of rf power are given

A first principles study of adhesion and electronic structure at Fe (110)/graphite (0001) interface

Energy Technology Data Exchange (ETDEWEB)

Liu, Yangzhen; Xing, Jiandong; Li, Yefei, E-mail: yefeili@126.com; Sun, Liang; Wang, Yong

2017-05-31

Highlights: • The surface energy of graphite (0001) and Fe (110) has been calculated and the number of layers of graphite slab and Fe slab has been estimated. • The work of adhesion of Fe (110)/graphite (0001) interface with different interfacial separation d{sub 0} (1.7–3 Å) has been systematically discussed. • The total electron density and electron density difference of Fe (110)/graphite (0001) are used to study the bonding characteristics. • The Interfacial energy and fracture toughness of Fe (110)/graphite (0001) are estimated. - Abstract: Using first–principles calculations, we discuss the bulk properties of bcc Fe and graphite and that of the surface, the work of adhesion, and the electronic structure of Fe (110)/graphite (0001) interface. In this study, the experimental results of the bulk properties of bcc Fe and graphite reveal that our adopted parameters are reliable. Moreover, the results of surface energy demonstrate that nine atomic layers of graphite (0001) and five atomic layers of Fe (110) exhibit bulk–like interiors. The lattice mismatch of Fe (110)/graphite (0001) interface is about 6%. The results also exhibit that the Fe atom residing on top of the second layer of graphite slab (HCP structure) is the preferred stacking sequence. The work of adhesion (W{sub ad}) of the optimized Fe/graphite interface of HCP structure is 1.36 J/m{sup 2}. Electronic structures indicate that the bonding characteristics are a mixture of covalent and ionic bonds in the HCP interface. Moreover, the magnetic moment of atoms at the interface was studied using the spin polarized density of states.

15-year-activity of Electron Linear Accelerator Laboratory

International Nuclear Information System (INIS)

Karolczak, S.

1999-01-01

The purchase of the Russian Electron Linear Accelerator ELU-6E by Institute of Radiation Technique of Lodz Technical University in 1978 started the activity of the ELA Laboratory. The accelerator itself and many additional scientific equipment designed and built during past 15 years have became the basic investigation tool for the ITR now. The most important measuring systems based on electron beam as irradiation source are: pulse radiolysis system with detection in IR, UV and visible region of the spectra, radiation induced conductometry, Faraday chamber and computerized data acquisition and processing system

Controller for control of pulsed electron linear accelerator

International Nuclear Information System (INIS)

Bryazgin, A.A.; Faktorovich, B.L.

1995-01-01

The controller is based on the K1816VE31 microprocessor and contains 22-channel integrating 10-digital two-wire analog-to-digital converter, 8-channel 12-digit digital-to-analog converter, 24-digit output register, 16-digit input register pulse generator in the range of 0.5 - 50 Hz with the regulation step of 0.05 Hz and delayed pulse generator. The controller is used for pulsed electron linear accelerator control and is reduced to regulation of the electron beam pulse repetition rate and beam energy. 1 ref., 1 fig

A Web Service and Interface for Remote Electronic Device Characterization

Science.gov (United States)

Dutta, S.; Prakash, S.; Estrada, D.; Pop, E.

2011-01-01

A lightweight Web Service and a Web site interface have been developed, which enable remote measurements of electronic devices as a "virtual laboratory" for undergraduate engineering classes. Using standard browsers without additional plugins (such as Internet Explorer, Firefox, or even Safari on an iPhone), remote users can control a Keithley…

Electron Model of Linear-Field FFAG

CERN Document Server

Koscielniak, Shane R

2005-01-01

A fixed-field alternating-gradient accelerator (FFAG) that employs only linear-field elements ushers in a new regime in accelerator design and dynamics. The linear-field machine has the ability to compact an unprecedented range in momenta within a small component aperture. With a tune variation which results from the natural chromaticity, the beam crosses many strong, uncorrec-table, betatron resonances during acceleration. Further, relativistic particles in this machine exhibit a quasi-parabolic time-of-flight that cannot be addressed with a fixed-frequency rf system. This leads to a new concept of bucketless acceleration within a rotation manifold. With a large energy jump per cell, there is possibly strong synchro-betatron coupling. A few-MeV electron model has been proposed to demonstrate the feasibility of these untested acceleration features and to investigate them at length under a wide range of operating conditions. This paper presents a lattice optimized for a 1.3 GHz rf, initial technology choices f...

A Method to Simulate Linear Stability of Impulsively Accelerated Density Interfaces in Ideal-MHD and Gas Dynamics

International Nuclear Information System (INIS)

Samtaney, Ravi

2009-01-01

We present a numerical method to solve the linear stability of impulsively accelerated density interfaces in two dimensions such as those arising in the Richtmyer-Meshkov instability. The method uses an Eulerian approach, and is based on an unwind method to compute the temporally evolving base state and a flux vector splitting method for the perturbations. The method is applicable to either gas dynamics or magnetohydrodynamics. Numerical examples are presented for cases in which a hydrodynamic shock interacts with a single or double density interface, and a doubly shocked single density interface. Convergence tests show that the method is spatially second order accurate for smooth flows, and between first and second order accurate for flows with shocks

A comparative study about electronic structures at rubrene/Ag and Ag/rubrene interfaces

Directory of Open Access Journals (Sweden)

Sumona Sinha

2015-10-01

Full Text Available The contact between the electrode and the organic semiconductor is one of the most crucial factors in determining the organic device performance. The development and production technology of different organic devices require the understanding of different types of metal/organic semiconducting thin film interfaces. Comparisons about the electronic structures at Rubrene/Ag and Ag/Rubrene interfaces have been studied using photoemission spectroscopy. The Ag on rubrene interfaces is found to show more interesting and complex natures than its counterpart. The vacuum level (VL was shifted about 0.51 eV from push back effect for deposition of 5 Å rubrene onto Ag film whereas the electronic features of silver was only suppressed and no energy shift was resulted. While the deposition of 5 Å Ag onto rubrene film leads to the diffusion of the Ag atoms, as a cluster with quantum size effect, inside the film. Angle dependent XPS measurement indicates that diffused metal clusters were present at entire probed depth of the film. Moreover these clusters dope the uppermost surface of the rubrene film which consequences a shift of the electronic states of thick organic film towards higher binding energy. The VL was found to shift about 0.31 eV toward higher binding energy whereas the shift was around 0.21 eV for the electronic states of rubrene layer.

A comparative study about electronic structures at rubrene/Ag and Ag/rubrene interfaces

Energy Technology Data Exchange (ETDEWEB)

Sinha, Sumona, E-mail: sumona.net.09@gmail.com; Mukherjee, M. [Saha Institute of Nuclear Physics, 1/AF, Bidhan Nagar, Kolkata 700064 (India)

2015-10-15

The contact between the electrode and the organic semiconductor is one of the most crucial factors in determining the organic device performance. The development and production technology of different organic devices require the understanding of different types of metal/organic semiconducting thin film interfaces. Comparisons about the electronic structures at Rubrene/Ag and Ag/Rubrene interfaces have been studied using photoemission spectroscopy. The Ag on rubrene interfaces is found to show more interesting and complex natures than its counterpart. The vacuum level (VL) was shifted about 0.51 eV from push back effect for deposition of 5 Å rubrene onto Ag film whereas the electronic features of silver was only suppressed and no energy shift was resulted. While the deposition of 5 Å Ag onto rubrene film leads to the diffusion of the Ag atoms, as a cluster with quantum size effect, inside the film. Angle dependent XPS measurement indicates that diffused metal clusters were present at entire probed depth of the film. Moreover these clusters dope the uppermost surface of the rubrene film which consequences a shift of the electronic states of thick organic film towards higher binding energy. The VL was found to shift about 0.31 eV toward higher binding energy whereas the shift was around 0.21 eV for the electronic states of rubrene layer.

Coherent synchrotron radiation by an electron linear accelerator

International Nuclear Information System (INIS)

Nakazato, T.; Oyamada, M.; Niimura, N.

1990-01-01

Coherent effects in synchrotron radiation (SR) have been observed for the first time from 180 MeV short electron bunches of 1.7 mm using the Tohoku 300 MeV Linac. The intensity of the coherent SR was about 10 5 times as strong as that of incoherent SR at wavelengths of 0.33 to 2.0 mm. This enhancement factor roughly corresponds to the number of electrons in a bunch. The SR intensity showed a quadratic dependence on the electron beam current. The radiation was mainly polarized in the orbital plane. The possibility of induced rf in a vacuum chamber was excluded experimentally. An electron linear accelerator will be applied to a strong light source from infrared to millimeter wavelengths instead of the storage rings. The bunch length of shorter than 1 mm can be observed by the spectrum measurement of coherent SR. (author)

Electronic structure and lattice dynamics at the interface of single layer FeSe and SrTiO3

Science.gov (United States)

Ahmed, Towfiq; Balatsky, Alexander; Zhu, Jian-Xin

Recent discovery of high-temperature superconductivity with the superconducting energy gap opening at temperatures close to or above the liquid nitrogen boiling point in the single-layer FeSe grown on SrTiO3 has attracted significant interest. It suggests that the interface effects can be utilized to enhance the superconductivity. It has been shown recently that the coupling between the electrons in FeSe and vibrational modes at the interface play an important role. Here we report on a detailed study of electronic structure and lattice dynamics in the single-layer FeSe/SrTiO3 interface by using the state-of-art electronic structure method within the density functional theory. The nature of the vibrational modes at the interface and their coupling to the electronic degrees of freedom are analyzed. In addition, the effect of hole and electron doping in SrTiO3 on the electron-mode coupling strength is also considered. This work was carried out under the auspices of the National Nuclear Security Administration of the U.S. DOE at LANL under Contract No. DE-AC52-06NA25396, and was supported by the DOE Office of Basic Energy Sciences.

ELSI: A unified software interface for Kohn-Sham electronic structure solvers

Science.gov (United States)

Yu, Victor Wen-zhe; Corsetti, Fabiano; García, Alberto; Huhn, William P.; Jacquelin, Mathias; Jia, Weile; Lange, Björn; Lin, Lin; Lu, Jianfeng; Mi, Wenhui; Seifitokaldani, Ali; Vázquez-Mayagoitia, Álvaro; Yang, Chao; Yang, Haizhao; Blum, Volker

2018-01-01

Solving the electronic structure from a generalized or standard eigenproblem is often the bottleneck in large scale calculations based on Kohn-Sham density-functional theory. This problem must be addressed by essentially all current electronic structure codes, based on similar matrix expressions, and by high-performance computation. We here present a unified software interface, ELSI, to access different strategies that address the Kohn-Sham eigenvalue problem. Currently supported algorithms include the dense generalized eigensolver library ELPA, the orbital minimization method implemented in libOMM, and the pole expansion and selected inversion (PEXSI) approach with lower computational complexity for semilocal density functionals. The ELSI interface aims to simplify the implementation and optimal use of the different strategies, by offering (a) a unified software framework designed for the electronic structure solvers in Kohn-Sham density-functional theory; (b) reasonable default parameters for a chosen solver; (c) automatic conversion between input and internal working matrix formats, and in the future (d) recommendation of the optimal solver depending on the specific problem. Comparative benchmarks are shown for system sizes up to 11,520 atoms (172,800 basis functions) on distributed memory supercomputing architectures.

Procedures manual for the Oak Ridge Electron Linear Accelerator

International Nuclear Information System (INIS)

Todd, H.A.

1979-01-01

The Procedures Manual for the Oak Ridge Electron Linear Accelerator contains specific information pertaining to operation and safety of the facility. Items such as the interlock system, radiation monitoring, emergency procedures, night shift and weekend operation, and maintenance are discussed in detail

Electronic structure and STM imaging of the KBr-InSb interface

Energy Technology Data Exchange (ETDEWEB)

Ciochoń, Piotr, E-mail: ciochon.piotr@gmail.com; Olszowska, Natalia; Kołodziej, Jacek J.

2017-07-01

Highlights: • The structure of the InSb (001) surface covered with thin KBr layers is reported. • KBr growth does not perturb strongly the structure of a clean InSb surface. • A model of the system with KBr treated as a thin dielectric layer is proposed. • The atomic structure of the KBr-InSb interface is directly imaged using STM. - Abstract: We study the properties of the InSb (001) surface covered with ultrathin KBr films, with a thickness of 1–4 ML. KBr deposition does not strongly perturb the crystallographic structure of the InSb surface and the electronic structure of the substrate also remains unaffected by the overlayer. A simple model of the studied system is proposed, in which a thin KBr layer is treated as a dielectric film, modifying potential barrier for the electrons tunneling to/from the InSb substrate. Apparent step heights on the KBr film, measured using scanning tunneling microscope (STM), agree well with the predictions of the model and the atomically-resolved STM images show the structure of the InSb-KBr interface. Our results demonstrate that STM may be used as a tool for investigations of the semiconductor–insulator interfaces.

Structural and electronic properties of the transition layer at the SiO2/4H-SiC interface

Directory of Open Access Journals (Sweden)

Wenbo Li

2015-01-01

Full Text Available Using first-principles methods, we generate an amorphous SiO2/4H-SiC interface with a transition layer. Based this interface model, we investigate the structural and electronic properties of the interfacial transition layer. The calculated Si 2p core-level shifts for this interface are comparable to the experimental data, indicating that various SiCxOy species should be present in this interface transition layer. The analysis of the electronic structures reveals that the tetrahedral SiCxOy structures cannot introduce any of the defect states at the interface. Interestingly, our transition layer also includes a C-C=C trimer and SiO5 configurations, which lead to the generation of interface states. The accurate positions of Kohn-Sham energy levels associated with these defects are further calculated within the hybrid functional scheme. The Kohn-Sham energy levels of the carbon trimer and SiO5 configurations are located near the conduction and valence band of bulk 4H-SiC, respectively. The result indicates that the carbon trimer occurred in the transition layer may be a possible origin of near interface traps. These findings provide novel insight into the structural and electronic properties of the realistic SiO2/SiC interface.

First-principles investigation of the electronic states at perovskite and pyrite hetero-interfaces

KAUST Repository

Nazir, Safdar

2012-09-01

Oxide heterostructures are attracting huge interest in recent years due to the special functionalities of quasi two-dimensional quantum gases. In this thesis, the electronic states at the interface between perovskite oxides and pyrite compounds have been studied by first-principles calculations based on density functional theory. Optimization of the atomic positions are taken into account, which is considered very important at interfaces, as observed in the case of LaAlO3/SrTiO3. The creation of metallic states at the interfaces thus is explained in terms of charge transfer between the transition metal and oxygen atoms near the interface. It is observed that with typical thicknesses of at least 10-12 °A the gases still extend considerably in the third dimension, which essentially determines the magnitude of quantum mechanical effects. To overcome this problem, we propose incorporation of highly electronegative cations (such as Ag) in the oxides. A fundamental interest is also the thermodynamic stability of the interfaces due to the possibility of atomic intermixing in the interface region. Therefore, different cation intermixed configurations are taken into account for the interfaces aiming at the energetically stable state. The effect of O vacancies is also discussed for both polar and non-polar heterostructures. The interface metallicity is enhanced for the polar system with the creation of O vacancies, while the clean interface at the non-polar heterostructure exhibits an insulating state and becomes metallic in presence of O vacancy. The O vacancy formation energies are calculated and explained in terms of the increasing electronegativity and effective volume of A the side cation. Along with these, the electronic and magnetic properties of an interface between the ferromagnetic metal CoS2 and the non-magnetic semiconductor FeS2 is investigated. We find that this contact shows a metallic character. The CoS2 stays quasi half metallic at the interface, while the

Research on heightening quality of free electron laser using superconducting linear accelerator

International Nuclear Information System (INIS)

Minehara, Eisuke

1996-01-01

In this paper, the superconducting high frequency linear accelerator technology using low temperature superconductor is introduced, and its application to the heightening of quality of free electron laser is discussed. The high frequency application of superconductivity is a relatively new technology, and the first superconducting high frequency linear accelerator was made at the middle of 1960s. The invention of free electron laser and the development so far are described. In free electron laser, the variation of wavelength, high efficiency and high power output are possible as compared with conventional type lasers. The price and the size are two demerits of free electron laser that remain to the last. In Japan Atomic Energy Research Institute, the adjustment experiment is carried out for the prototype free electron laser. About this prototype, injection system, superconducting accelerator, helium refrigerator, whole solid element high frequency power source, control system, electron beam transport system, undulator system and optical resonator are described. The application of high mean power output free electron laser and its future are discussed. (K.I.)

Molecular-structure control of ultrafast electron injection at cationic porphyrin-CdTe quantum dot interfaces

KAUST Repository

Aly, Shawkat Mohammede

2015-03-05

Charge transfer (CT) at donor (D)/acceptor (A) interfaces is central to the functioning of photovoltaic and light-emitting devices. Understanding and controlling this process on the molecular level has been proven to be crucial for optimizing the performance of many energy-challenge relevant devices. Here, we report the experimental observations of controlled on/off ultrafast electron transfer (ET) at cationic porphyrin-CdTe quantum dot (QD) interfaces using femto- and nanosecond broad-band transient absorption (TA) spectroscopy. The time-resolved data demonstrate how one can turn on/off the electron injection from porphyrin to the CdTe QDs. With careful control of the molecular structure, we are able to tune the electron injection at the porphyrin-CdTe QD interface from zero to very efficient and ultrafast. In addition, our data demonstrate that the ET process occurs within our temporal resolution of 120 fs, which is one of the fastest times recorded for organic photovoltaics. © 2015 American Chemical Society.

Opto-electronic conversion logic behaviour through dynamic modulation of electron/energy transfer states at the TiO2-carbon quantum dot interface.

Science.gov (United States)

Wang, Fang; Zhang, Yonglai; Liu, Yang; Wang, Xuefeng; Shen, Mingrong; Lee, Shuit-Tong; Kang, Zhenhui

2013-03-07

Here we show a bias-mediated electron/energy transfer process at the CQDs-TiO(2) interface for the dynamic modulation of opto-electronic properties. Different energy and electron transfer states have been observed in the CQDs-TNTs system due to the up-conversion photoluminescence and the electron donation/acceptance properties of the CQDs decorated on TNTs.

Local electronic structure at organic–metal interface studied by UPS, MAES, and first-principles calculation

Energy Technology Data Exchange (ETDEWEB)

Aoki, M., E-mail: cmaoki@mail.ecc.u-tokyo.ac.jp; Masuda, S.

2015-10-01

Understanding and controlling local electronic structures at organic–metal interfaces are crucial for fabricating novel organic-based electronics, as in the case of heterojunctions in semiconductor devices. Here, we report recent studies of valence electronic states at organic–metal interfaces (especially those near the Fermi level of a metal substrate) by the combined analysis of ultraviolet photoemission spectroscopy (UPS), metastable atom electron spectroscopy (MAES), and first-principles calculations. New electronic states in the HOMO (highest occupied molecular orbital)–LUMO (lowest unoccupied molecular orbital) gap formed at an organic–metal interface are classified as a chemisorption-induced gap state (CIGS) and a complex-based gap state (CBGS). The CIGS is further characterized by an asymptotic feature of the metal wave function in the chemisorbed species. The CIGSs in alkanethiolates on Pt(1 1 1) and C{sub 60} on Pt(1 1 1) can be regarded as damping and propagating types, respectively. The CBGSs in K-doped dibenzopentacene (DBP) are composed of DBP-derived MOs and K sp states and distributed over the complex film. No metallic structures were found in the K{sub 1}DBP and K{sub 3}DBP phases, suggesting that they are Mott–Hubbard insulators due to strong electron correlation. The local electronic structures of a pentacene film bridged by Au electrodes under bias voltages were examined by an FET-like specimen. The pentacene-derived bands were steeply shifted at the positively biased electrode, reflecting the p-type character of the film.

Fluctuation in Interface and Electronic Structure of Single-Molecule Junctions Investigated by Current versus Bias Voltage Characteristics.

Science.gov (United States)

Isshiki, Yuji; Fujii, Shintaro; Nishino, Tomoaki; Kiguchi, Manabu

2018-03-14

Structural and electronic detail at the metal-molecule interface has a significant impact on the charge transport across the molecular junctions, but its precise understanding and control still remain elusive. On the single-molecule scale, the metal-molecule interface structures and relevant charge transport properties are subject to fluctuation, which contain the fundamental science of single-molecule transport and implication for manipulability of the transport properties in electronic devices. Here, we present a comprehensive approach to investigate the fluctuation in the metal-molecule interface in single-molecule junctions, based on current-voltage ( I- V) measurements in combination with first-principles simulation. Contrary to conventional molecular conductance studies, this I- V approach provides a correlated statistical description of both the degree of electronic coupling across the metal-molecule interface and the molecular orbital energy level. This statistical approach was employed to study fluctuation in single-molecule junctions of 1,4-butanediamine (DAB), pyrazine (PY), 4,4'-bipyridine (BPY), and fullerene (C 60 ). We demonstrate that molecular-dependent fluctuation of σ-, π-, and π-plane-type interfaces can be captured by analyzing the molecular orbital (MO) energy level under mechanical perturbation. While the MO level of DAB with the σ-type interface shows weak distance dependence and fluctuation, the MO level of PY, BPY, and C 60 features unique distance dependence and molecular-dependent fluctuation against the mechanical perturbation. The MO level of PY and BPY with the σ+π-type interface increases with the increase in the stretch distance. In contrast, the MO level of C 60 with the π-plane-type interface decreases with the increase in the stretching perturbation. This study provides an approach to resolve the structural and electronic fluctuation in the single-molecule junctions and insight into the molecular-dependent fluctuation in

Electron non-linearities in Langmuir waves with application to beat-wave experiments

International Nuclear Information System (INIS)

Bell, A.R.; Gibbon, P.

1988-01-01

Non-linear Langmuir waves are examined in the context of the beat-wave accelerator. With a background of immobile ions the waves in one dimension are subject to the relativistic non-linearity of Rosenbluth, M.N. and Liu, C.S., Phys. Rev. Lett., 1972, 29, 701. In two or three dimensions, other electron non-linearities occur which involve electric and magnetic fields. The quasi-linear equations for these non-linearities are developed and solved numerically in a geometry representative of laser-driven beat waves. (author)

Correlating electronic and geometric structures of organic films and interfaces by means of synchrotron radiation based techniques

International Nuclear Information System (INIS)

Yamane, Hiroyuki

2013-01-01

The electronic structure of organic thin films and interfaces plays a crucial role in the performance of optoelectronic devices using organic semiconductors, and is seriously dominated by the geometric film/interface structure due to the anisotropic spatial distribution of molecular orbitals. This paper briefly reviews the recent progress of the examination of correlating electronic structure and geometric structure of archetypal organic semiconductor thin films and interfaces by using spectroscopic experiments with synchrotron radiation such as angle-resolved photoelectron spectroscopy, x-ray absorption spectroscopy, and x-ray standing wave. (author)

Ultrafast Electron Transfer at Organic Semiconductor Interfaces: Importance of Molecular Orientation

KAUST Repository

Ayzner, Alexander L.

2015-01-02

© 2014 American Chemical Society. Much is known about the rate of photoexcited charge generation in at organic donor/acceptor (D/A) heterojunctions overaged over all relative arrangements. However, there has been very little experimental work investigating how the photoexcited electron transfer (ET) rate depends on the precise relative molecular orientation between D and A in thin solid films. This is the question that we address in this work. We find that the ET rate depends strongly on the relative molecular arrangement: The interface where the model donor compound copper phthalocyanine is oriented face-on with respect to the fullerene C60 acceptor yields a rate that is approximately 4 times faster than that of the edge-on oriented interface. Our results suggest that the D/A electronic coupling is significantly enhanced in the face-on case, which agrees well with theoretical predictions, underscoring the importance of controlling the relative interfacial molecular orientation.

Ultrafast Electron Transfer at Organic Semiconductor Interfaces: Importance of Molecular Orientation

KAUST Repository

Ayzner, Alexander L.; Nordlund, Dennis; Kim, Do-Hwan; Bao, Zhenan; Toney, Michael F.

2015-01-01

© 2014 American Chemical Society. Much is known about the rate of photoexcited charge generation in at organic donor/acceptor (D/A) heterojunctions overaged over all relative arrangements. However, there has been very little experimental work investigating how the photoexcited electron transfer (ET) rate depends on the precise relative molecular orientation between D and A in thin solid films. This is the question that we address in this work. We find that the ET rate depends strongly on the relative molecular arrangement: The interface where the model donor compound copper phthalocyanine is oriented face-on with respect to the fullerene C60 acceptor yields a rate that is approximately 4 times faster than that of the edge-on oriented interface. Our results suggest that the D/A electronic coupling is significantly enhanced in the face-on case, which agrees well with theoretical predictions, underscoring the importance of controlling the relative interfacial molecular orientation.

Electronic properties of metal-organic and organic-organic interfaces studied by photoemission and photoabsorption spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Molodtsova, Olga

2006-07-01

In this work systematic studies of the organic semiconductor CuPc have been presented. In general the investigation can be devided in three parts. In the first one we have studied the electronic structure of clean CuPc thin film. The next two parts are devoted to organic-organic and metal-organic interface formation, where one of the interface components is CuPc thin film. The main results of this thesis are: - The electronic structure of the pristine organic semiconductor CuPc has been obtained by a combination of conventional and resonant photoemission, near-edge X-ray absorption, as well as by theoretical ab initio quantum-chemical calculations. The contributions of different atomic species as well as sites of the CuPc molecule to the electronic DOS has been established. A combined experimental and theoretical study of the unoccupied electronic density of states of CuPc was presented. - The electronic properties of the organic heterointerfaces between fullerite and pristine copper phthalocyanine were studied. Both interfaces, CuPc/C{sub 60} and C{sub 60}/CuPc, were found to be non-reactive with pronounced shifts of the vacuum level pointing to the formation of an interfacial dipole mainly at the CuPc side of the heterojunctions. The dipole values are close to the difference of the work functions of the two materials. Important interface parameters and hole-injection barriers were obtained. The sequence of deposition does not influence the electronic properties of the interfaces. - CuPc doped with potassium was studied by means of photoemission and photoabsorption spectroscopy. A detailed analysis of the core-level PE spectra allows one to propose possible lattice sites, which harbor the potassium ions. The films prepared in this thesis showed no finite electronic density of states at the Fermi level. - Two stages of the In/CuPc interface formation have been distinguished. The low-coverage stage is characterized by a strong diffusion of the In atoms into the

Study of charge distribution and atomic arrangement at interfaces using fast electron scattering

International Nuclear Information System (INIS)

Hugsted, B.

1993-01-01

The principle of fast electron scattering at a potential step has been elucidated. It has been shown that electrons scattered in the near forward direction bring significant information of the potential step at an interface. Experiments have been shown where the interface between AlAs and GaAs in a MBE-grown sample is visible as a bright or dark line in the image, depending on the location of the dark field aperture. The asymmetric intensity distribution in reciprocal space has been shown using an improved phase grating approximation. The author puts forward the argument that neither the normal dark-field technique in the electron microscope nor the usual reciprocal space calculation techniques for image simulation are suited for this type of experiments. This argumentation is followed by the proposal of an improved dark field technique with high resolution in reciprocal space, and the development of a calculation technique (performed in real space) that is suitable for the calculation of electron scattering from non-periodic objects. 28 refs

Atomic and electronic structures of lattice mismatched Cu{sub 2}O/TiO{sub 2} interfaces

Energy Technology Data Exchange (ETDEWEB)

Wang, Shuzhi [Materials Sciences Division, Lawrence Berkeley National Laboratory, One Cyclotron Road, Mail Stop 66, Berkeley, California 94720 (United States); Kavaipatti, Balasubramaniam; Ramesh, Ramamoorthy [Department of Materials Science and Engineering, University of California at Berkeley, Berkeley, California 94720 (United States); Kim, Sung-Joo; Pan, Xiaoqing [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Ager, Joel W.; Wang, Lin-Wang, E-mail: lwwang@lbl.gov [Materials Sciences Division, Lawrence Berkeley National Laboratory, One Cyclotron Road, Mail Stop 66, Berkeley, California 94720 (United States); Joint Center of Artificial Photosynthesis, Berkeley, California 94720 (United States)

2014-05-26

Heterojunction interfaces between metal oxides are often highly lattice mismatched. The atomic and electronic structures of such interfaces, however, are not well understood. We have synthesized Cu{sub 2}O/TiO{sub 2} heterojunction thin films with 13% lattice mismatch and studied the interface via experimental methods and large-scale density function theory calculations of supercells containing ∼1300 atoms. We find that an interface of epitaxial quality is formed via a coincidence site lattice of 8 Cu{sub 2}O unit cells matching 9 TiO{sub 2} unit cells. Calculations reveal the existence of a dislocation core of the O sublattices at the interface and a random arrangement of one layer of interfacial Cu atoms. The interfacial electronic structure is found to be mostly determined by the interfacial Cu distribution, rather than by the O dislocation core. The conduction band minimum and valence band maximum states are spatially separated, and there is no strongly localized state near the core.

Quasi-stationary states of an electron with linearly dependent effective mass in an open nanostructure within transmission coefficient and S-matrix methods

Science.gov (United States)

Seti, Julia; Tkach, Mykola; Voitsekhivska, Oxana

2018-03-01

The exact solutions of the Schrödinger equation for a double-barrier open semiconductor plane nanostructure are obtained by using two different approaches, within the model of the rectangular potential profile and the continuous position-dependent effective mass of the electron. The transmission coefficient and scattering matrix are calculated for the double-barrier nanostructure. The resonance energies and resonance widths of the electron quasi-stationary states are analyzed as a function of the size of the near-interface region between wells and barriers, where the effective mass linearly depends on the coordinate. It is established that, in both methods, the increasing size affects in a qualitatively similar way the spectral characteristics of the states, shifting the resonance energies into the low- or high-energy region and increasing the resonance widths. It is shown that the relative difference of resonance energies and widths of a certain state, obtained in the model of position-dependent effective mass and in the widespread abrupt model in physically correct range of near-interface sizes, does not exceed 0.5% and 5%, respectively, independently of the other geometrical characteristics of the structure.

Spectromicroscopic Insights into the Morphology and Interfaces of Operational Organic Electronic Devices

OpenAIRE

Du, Xiaoyan

2017-01-01

Organic electronics, e.g., organic field-effect transistors (OFETs), organic solar cells (OSCs) and organic light-emitting diodes (OLEDs), have attracted strong interest in both academia and industry during the last decades due to their unique capabilities offered by organic semiconductors. The micro-/nano-structures in active layers and the interface engineering in organic electronics are extremely important for desired device functionalities. In this thesis, the structure-function relations...

Current linearity and operation stability in Al2O3-gate AlGaN/GaN MOS high electron mobility transistors

Science.gov (United States)

Nishiguchi, Kenya; Kaneki, Syota; Ozaki, Shiro; Hashizume, Tamotsu

2017-10-01

To investigate current linearity and operation stability of metal-oxide-semiconductor (MOS) AlGaN/GaN high electron mobility transistors (HEMTs), we have fabricated and characterized the Al2O3-gate MOS-HEMTs without and with a bias annealing in air at 300 °C. Compared with the as-fabricated (unannealed) MOS HEMTs, the bias-annealed devices showed improved linearity of I D-V G curves even in the forward bias regime, resulting in increased maximum drain current. Lower subthreshold slope was also observed after bias annealing. From the precise capacitance-voltage analysis on a MOS diode fabricated on the AlGaN/GaN heterostructure, it was found that the bias annealing effectively reduced the state density at the Al2O3/AlGaN interface. This led to efficient modulation of the AlGaN surface potential close to the conduction band edge, resulting in good gate control of two-dimensional electron gas density even at forward bias. In addition, the bias-annealed MOS HEMT showed small threshold voltage shift after applying forward bias stress and stable operation even at high temperatures.

Data acquisition interface for calculating heat diffusion in certain electronic circuits; Interface d`acquisition des donnees permettant le calcul de la diffusion de la chaleur dans certains circuits electroniques

Energy Technology Data Exchange (ETDEWEB)

Spiesser, Ph.

1996-05-01

A user interface has been developed for geometrical and thermal data acquisition, in order to allow calculations of heat diffusion in certain types of electronic circuits such as power hybrids and compact electronic modules, using computerized simulations. Data management, structure and organization, the data acquisition interface program, and variables and sources, are described

Monitoring and control system of the Saclay electron linear accelerator

International Nuclear Information System (INIS)

Lafontaine, Antoine

1974-01-01

A description is given of the automatic monitoring and control system of the 60MeV electron linear accelerator of the Centre d'Etudes Nucleaires de Saclay. The paper is mostly concerned with the programmation of the system. However, in a real time device, there is a very close association between computer and electronics, the latter are therefore described in details and make up most of the paper. [fr

User-Centered Design, Experience, and Usability of an Electronic Consent User Interface to Facilitate Informed Decision-Making in an HIV Clinic.

Science.gov (United States)

Ramos, S Raquel

2017-11-01

Health information exchange is the electronic accessibility and transferability of patient medical records across various healthcare settings and providers. In some states, patients have to formally give consent to allow their medical records to be electronically shared. The purpose of this study was to apply a novel user-centered, multistep, multiframework approach to design and test an electronic consent user interface, so patients with HIV can make more informed decisions about electronically sharing their health information. This study consisted of two steps. Step 1 was a cross-sectional, descriptive, qualitative study that used user-centric design interviews to create the user interface. This informed Step 2. Step 2 consisted of a one group posttest to examine perceptions of usefulness, ease of use, preference, and comprehension of a health information exchange electronic consent user interface. More than half of the study population had college experience, but challenges remained with overall comprehension regarding consent. The user interface was not independently successful, suggesting that in addition to an electronic consent user interface, human interaction may also be necessary to address the complexities associated with consenting to electronically share health information. Comprehension is key factor in the ability to make informed decisions.

Factors affecting physicians’ use of a dedicated overview interface in an electronic health record

DEFF Research Database (Denmark)

Jensen, Lotte Groth; Bossen, Claus

2016-01-01

Background : It remains a continual challenge to present information in user interfaces in large IT systems to support overview in the best possible way. We here examine how an Electronic Health Record (EHR) supports the creation of overview among hospital physicians with a particular focus...... the reasons for its use and non-use Method: We conducted exploratory ethnographic fieldwork among physicians in two hospitals and gathered statistical data on their use of the overview interface. From the quantitative data, we identified where the interface was used most and conducted 18 semi-structured, open-ended...... on the use of an interface designed to provide clinicians with a patient information overview. The overview interface integrates information flexibly from diverse places in the EHR and presents this information in one screen display. Our study revealed widespread non-use of the overview interface. We explore...

Mechanically Compliant Electronic Materials for Wearable Photovoltaics and Human-Machine Interfaces

Science.gov (United States)

O'Connor, Timothy Francis, III

Applications of stretchable electronic materials for human-machine interfaces are described herein. Intrinsically stretchable organic conjugated polymers and stretchable electronic composites were used to develop stretchable organic photovoltaics (OPVs), mechanically robust wearable OPVs, and human-machine interfaces for gesture recognition, American Sign Language Translation, haptic control of robots, and touch emulation for virtual reality, augmented reality, and the transmission of touch. The stretchable and wearable OPVs comprise active layers of poly-3-alkylthiophene:phenyl-C61-butyric acid methyl ester (P3AT:PCBM) and transparent conductive electrodes of poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) and devices could only be fabricated through a deep understanding of the connection between molecular structure and the co-engineering of electronic performance with mechanical resilience. The talk concludes with the use of composite piezoresistive sensors two smart glove prototypes. The first integrates stretchable strain sensors comprising a carbon-elastomer composite, a wearable microcontroller, low energy Bluetooth, and a 6-axis accelerometer/gyroscope to construct a fully functional gesture recognition glove capable of wirelessly translating American Sign Language to text on a cell phone screen. The second creates a system for the haptic control of a 3D printed robot arm, as well as the transmission of touch and temperature information.

Electronic structure of the polymer-cathode interface of an organic electroluminescent device investigated using operando hard x-ray photoelectron spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Ikeuchi, J.; Hamamatsu, H.; Miyamoto, T. [Sumitomo Chemical Co., Ltd., Advanced Materials Research Laboratory, 6 Kitahara, Tsukuba, Ibaraki 300-3294 (Japan); Tanaka, S. [Sumitomo Chemical Co., Ltd., Tsukuba Material Development Laboratory, 6 Kitahara, Tsukuba, Ibaraki 300-3294 (Japan); Yamashita, Y.; Yoshikawa, H.; Ueda, S. [National Institute for Materials Science, Synchrotron X-ray Station at SPring-8, Sayo-cho, Sayo-gun, Hyogo 679-5148 (Japan)

2015-08-28

The electronic structure of a polymer-cathode interface of an operating organic light-emitting diode (OLED) was directly investigated using hard X-ray photoelectron spectroscopy (HAXPES). The potential distribution profile of the light-emitting copolymer layer as a function of the depth under the Al/Ba cathode layer in the OLED depended on the bias voltage. We found that band bending occurred in the copolymer of 9,9-dioctylfluorene (50%) and N-(4-(2-butyl)-phenyl)diphenylamine (F8-PFB) layer near the cathode at 0 V bias, while a linear potential distribution formed in the F8-PFB when a bias voltage was applied to the OLED. Direct observation of the built-in potential and that band bending formed in the F8-PFB layer in the operating OLED suggested that charges moved in the F8-PFB layer before electron injection from the cathode.

Electronic structure of the polymer-cathode interface of an organic electroluminescent device investigated using operando hard x-ray photoelectron spectroscopy

International Nuclear Information System (INIS)

Ikeuchi, J.; Hamamatsu, H.; Miyamoto, T.; Tanaka, S.; Yamashita, Y.; Yoshikawa, H.; Ueda, S.

2015-01-01

The electronic structure of a polymer-cathode interface of an operating organic light-emitting diode (OLED) was directly investigated using hard X-ray photoelectron spectroscopy (HAXPES). The potential distribution profile of the light-emitting copolymer layer as a function of the depth under the Al/Ba cathode layer in the OLED depended on the bias voltage. We found that band bending occurred in the copolymer of 9,9-dioctylfluorene (50%) and N-(4-(2-butyl)-phenyl)diphenylamine (F8-PFB) layer near the cathode at 0 V bias, while a linear potential distribution formed in the F8-PFB when a bias voltage was applied to the OLED. Direct observation of the built-in potential and that band bending formed in the F8-PFB layer in the operating OLED suggested that charges moved in the F8-PFB layer before electron injection from the cathode

Electronic structure of the polymer-cathode interface of an organic electroluminescent device investigated using operando hard x-ray photoelectron spectroscopy

Science.gov (United States)

Ikeuchi, J.; Hamamatsu, H.; Miyamoto, T.; Tanaka, S.; Yamashita, Y.; Yoshikawa, H.; Ueda, S.

2015-08-01

The electronic structure of a polymer-cathode interface of an operating organic light-emitting diode (OLED) was directly investigated using hard X-ray photoelectron spectroscopy (HAXPES). The potential distribution profile of the light-emitting copolymer layer as a function of the depth under the Al/Ba cathode layer in the OLED depended on the bias voltage. We found that band bending occurred in the copolymer of 9,9-dioctylfluorene (50%) and N-(4-(2-butyl)-phenyl)diphenylamine (F8-PFB) layer near the cathode at 0 V bias, while a linear potential distribution formed in the F8-PFB when a bias voltage was applied to the OLED. Direct observation of the built-in potential and that band bending formed in the F8-PFB layer in the operating OLED suggested that charges moved in the F8-PFB layer before electron injection from the cathode.

The Design of a Graphical User Interface for an Electronic Classroom.

Science.gov (United States)

Cahalan, Kathleen J.; Levin, Jacques

2000-01-01

Describes the design of a prototype for the graphical user interface component of an electronic classroom (ECR) application that supports real-time lectures and question-and-answer sessions between an instructor and students. Based on requirements analysis and an analysis of competing products, a Web-based ECR prototype was produced. Findings show…

Biomaterials-based electronics: polymers and interfaces for biology and medicine.

Science.gov (United States)

Muskovich, Meredith; Bettinger, Christopher J

2012-05-01

Advanced polymeric biomaterials continue to serve as a cornerstone for new medical technologies and therapies. The vast majority of these materials, both natural and synthetic, interact with biological matter in the absence of direct electronic communication. However, biological systems have evolved to synthesize and utilize naturally-derived materials for the generation and modulation of electrical potentials, voltage gradients, and ion flows. Bioelectric phenomena can be translated into potent signaling cues for intra- and inter-cellular communication. These cues can serve as a gateway to link synthetic devices with biological systems. This progress report will provide an update on advances in the application of electronically active biomaterials for use in organic electronics and bio-interfaces. Specific focus will be granted to covering technologies where natural and synthetic biological materials serve as integral components such as thin film electronics, in vitro cell culture models, and implantable medical devices. Future perspectives and emerging challenges will also be highlighted. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electron re-scattering from aligned linear molecules using the R-matrix method

International Nuclear Information System (INIS)

Harvey, A G; Tennyson, J

2009-01-01

Electron re-scattering in a strong laser field provides an important probe of molecular structure and processes. The laser field drives the ionization of the molecule, followed by acceleration and subsequent recollision of the electron with the parent molecular ion, the scattered electrons carry information about the nuclear geometry and electronic states of the molecular ion. It is advantageous in strong field experiments to work with aligned molecules, which introduces extra physics compared to the standard gas-phase, electron-molecule scattering problem. The formalism for scattering from oriented linear molecules is presented and applied to H 2 and CO 2 . Differential cross sections are presented for (re-)scattering by these systems concentrating on the most common, linear alignment. In H 2 these cross sections show significant angular structure which, particularly for a scattering angle of 90 deg., are predicted to vary significantly between re-collisions stimulated by an even or an odd number of photons. In CO 2 these cross sections are zero indicating the necessity of using non-parallel alignment with this molecule.

The interface of the ferromagnetic metal CoS2 and the nonmagnetic semiconductor FeS2

KAUST Repository

Nazir, S.

2010-11-05

The electronic and magnetic properties of the cubic pyriteCoS2/FeS2interface are studied using the all-electron full-potential linearized augmented plane wave method. We find that this contact between a ferromagneticmetal and a nonmagnetic semiconductor shows a metallic character. The CoS2 stays close to half-metallicity at the interface, while the FeS2 becomes metallic. The magnetic moment of the Co atoms at the interface slightly decreases as compared to the bulk value and a small moment is induced on the Fe atoms. Furthermore, at the interfaceferromagnetic ordering is found to be energetically favorable as compared to antiferromagnetic ordering.

Tuning the two-dimensional electron liquid at oxide interfaces by buffer-layer-engineered redox reactions

DEFF Research Database (Denmark)

Chen, Yunzhong; Green, Robert J.; Sutarto, Ronny

2017-01-01

Polar discontinuities and redox reactions provide alternative paths to create two-dimensional electron liquids (2DELs) at oxide interfaces. Herein, we report high mobility 2DELs at interfaces involving SrTiO3 (STO) achieved using polar La7/8Sr1/8MnO3 (LSMO) buffer layers to manipulate both...... polarities and redox reactions from disordered overlayers grown at room temperature. Using resonant x-ray reflectometry experiments, we quantify redox reactions from oxide overlayers on STO as well as polarity induced electronic reconstruction at epitaxial LSMO/STO interfaces. The analysis reveals how...... these effects can be combined in a STO/LSMO/disordered film trilayer system to yield high mobility modulation doped 2DELs, where the buffer layer undergoes a partial transformation from perovskite to brownmillerite structure. This uncovered interplay between polar discontinuities and redox reactions via buffer...

The tracking of interfaces in an electron-beam vaporizer

International Nuclear Information System (INIS)

Westerberg, K.W.; McClelland, M.A.; Finlayson, B.A.

1993-03-01

A numerical analysis is made of the material and energy flow in an electron beam vaporizer. In this system the energy from an electron beam heats metal confined in a water-cooled crucible. Metal is vaporized from a liquid pool circulating in a shell of its own solid. A modified Galerkin finite element method is used to calculate the flow and temperature fields along with the interface locations. The mesh is parameterized with spines which stretch and pivot as the phase boundaries move. The discretized equations are arranged in an ''arrow'' matrix and solved using the Newton-Raphson method. Results are given for an experimental aluminum vaporizer. The effects of buoyancy and capillary driven flow are included along with the surface contributions of vapor thrust, latent heat, thermal radiation, and crucible contact resistance

An injector system of a NDZ-20 medical electron linear accelerator

International Nuclear Information System (INIS)

Wang Houwen; Lai Qiji; Zhu Yizhang; Yang Fangxin

1987-01-01

The structure and characteristic of an injector system of a NDZ-20 medical electron linear accelerator are described. A bombarded type of Pierce electron gun is used. There are pre-focusing coil, deflecting coil, steering coil and beam pulse lead cutting coil in drift tube region. They control electron beam efficiently for ARC, ADC and BLC of the accelerator. ARC and ADC can increase stability and reliability of the accelerator operation, and BLC improves energy spectrum of the back feed accelerator

Electronic structure of disordered alloys, surfaces and interfaces

CERN Document Server

Turek, Ilja; Kudrnovský, Josef; Šob, Mojmír; Weinberger, Peter

1997-01-01

At present, there is an increasing interest in the prediction of properties of classical and new materials such as substitutional alloys, their surfaces, and metallic or semiconductor multilayers. A detailed understanding based on a thus of the utmost importance for fu­ microscopic, parameter-free approach is ture developments in solid state physics and materials science. The interrela­ tion between electronic and structural properties at surfaces plays a key role for a microscopic understanding of phenomena as diverse as catalysis, corrosion, chemisorption and crystal growth. Remarkable progress has been made in the past 10-15 years in the understand­ ing of behavior of ideal crystals and their surfaces by relating their properties to the underlying electronic structure as determined from the first principles. Similar studies of complex systems like imperfect surfaces, interfaces, and mul­ tilayered structures seem to be accessible by now. Conventional band-structure methods, however, are of limited use ...

Linear flow dynamics near a T/NT interface

Science.gov (United States)

Teixeira, Miguel; Silva, Carlos

2011-11-01

The characteristics of a suddenly-inserted T/NT interface separating a homogeneous and isotropic shear-free turbulence region from a non-turbulent flow region are investigated using rapid distortion theory (RDT), taking full account of viscous effects. Profiles of the velocity variances, TKE, viscous dissipation rate, turbulence length scales, and pressure statistics are derived, showing very good agreement with DNS. The normalized inviscid flow statistics at the T/NT interface do not depend on the form of the assumed TKE spectrum. In the non-turbulent region, where the flow is irrotational (except within a thin viscous boundary layer), the dissipation rate decays as z-6, where z is distance from the T/NT interface. The mean pressure exhibits a decrease towards the turbulence due to the associated velocity fluctuations, consistent with the generation of a mean entrainment velocity. The vorticity variance and dissipation rate display large maxima at the T/NT interface due to the existing inviscid discontinuities of the tangential velocity, and these maxima are quantitatively related to the thickness of the viscous boundary layer (VBL). At equilibrium, RDT suggests that the thickness of the T/NT interface scales on the Kolmogorov microscale. We acknowledge the financial support of FCT under Project PTDC/EME-MFE/099636/2008.

High energy photoelectron spectroscopy in basic and applied science: Bulk and interface electronic structure

Energy Technology Data Exchange (ETDEWEB)

Knut, Ronny; Lindblad, Rebecka [Department of Physics and Astronomy, Uppsala University, SE-751 21 Uppsala (Sweden); Gorgoi, Mihaela [Helmholtz Zentrum Berlin für Materialien und Energie GmbH, Albert-Einstein-Str. 15, 12489 Berlin (Germany); Rensmo, Håkan [Department of Physics and Astronomy, Uppsala University, SE-751 21 Uppsala (Sweden); Karis, Olof, E-mail: olof.karis@physics.uu.se [Department of Physics and Astronomy, Uppsala University, SE-751 21 Uppsala (Sweden)

2013-10-15

Highlights: •We demonstrate how hard X-ray photoelectron spectroscopy can be used to investigate interface properties of multilayers. •By combining HAXPES and statistical methods we are able to provide quantitative analysis of the interface diffusion process. •We show how photoionization cross sections can be used to map partial density of states contributions to valence states. •We use HAXPES to provide insight into the valence electronic structure of e.g. multiferroics and dye-sensitized solar cells. -- Abstract: With the access of new high-performance electron spectrometers capable of analyzing electron energies up to the order of 10 keV, the interest for photoelectron spectroscopy has grown and many new applications of the technique in areas where electron spectroscopies were considered to have limited use have been demonstrated over the last few decades. The technique, often denoted hard X-ray photoelectron spectroscopy (HX-PES or HAXPES), to distinguish the experiment from X-ray photoelectron spectroscopy performed at lower energies, has resulted in an increasing interest in photoelectron spectroscopy in many areas. The much increased mean free path at higher kinetic energies, in combination with the elemental selectivity of the core level spectroscopies in general has led to this fact. It is thus now possible to investigate the electronic structure of materials with a substantially enhanced bulk sensitivity. In this review we provide examples from our own research using HAXPES which to date has been performed mainly at the HIKE facility at the KMC-1 beamline at HZB, Berlin. The review exemplifies the new opportunities using HAXPES to address both bulk and interface electronic properties in systems relevant for applications in magnetic storage, energy related research, but also in purely curiosity driven problems.

High energy photoelectron spectroscopy in basic and applied science: Bulk and interface electronic structure

International Nuclear Information System (INIS)

Knut, Ronny; Lindblad, Rebecka; Gorgoi, Mihaela; Rensmo, Håkan; Karis, Olof

2013-01-01

Highlights: •We demonstrate how hard X-ray photoelectron spectroscopy can be used to investigate interface properties of multilayers. •By combining HAXPES and statistical methods we are able to provide quantitative analysis of the interface diffusion process. •We show how photoionization cross sections can be used to map partial density of states contributions to valence states. •We use HAXPES to provide insight into the valence electronic structure of e.g. multiferroics and dye-sensitized solar cells. -- Abstract: With the access of new high-performance electron spectrometers capable of analyzing electron energies up to the order of 10 keV, the interest for photoelectron spectroscopy has grown and many new applications of the technique in areas where electron spectroscopies were considered to have limited use have been demonstrated over the last few decades. The technique, often denoted hard X-ray photoelectron spectroscopy (HX-PES or HAXPES), to distinguish the experiment from X-ray photoelectron spectroscopy performed at lower energies, has resulted in an increasing interest in photoelectron spectroscopy in many areas. The much increased mean free path at higher kinetic energies, in combination with the elemental selectivity of the core level spectroscopies in general has led to this fact. It is thus now possible to investigate the electronic structure of materials with a substantially enhanced bulk sensitivity. In this review we provide examples from our own research using HAXPES which to date has been performed mainly at the HIKE facility at the KMC-1 beamline at HZB, Berlin. The review exemplifies the new opportunities using HAXPES to address both bulk and interface electronic properties in systems relevant for applications in magnetic storage, energy related research, but also in purely curiosity driven problems

Linear-algebraic approach to electron-molecule collisions: General formulation

International Nuclear Information System (INIS)

Collins, L.A.; Schneider, B.I.

1981-01-01

We present a linear-algebraic approach to electron-molecule collisions based on an integral equations form with either logarithmic or asymptotic boundary conditions. The introduction of exchange effects does not alter the basic form or order of the linear-algebraic equations for a local potential. In addition to the standard procedure of directly evaluating the exchange integrals by numerical quadrature, we also incorporate exchange effects through a separable-potential approximation. Efficient schemes are developed for reducing the number of points and channels that must be included. The method is applied at the static-exchange level to a number of molecular systems including H 2 , N 2 , LiH, and CO 2

Linear-response theory of Coulomb drag in coupled electron systems

DEFF Research Database (Denmark)

Flensberg, Karsten; Hu, Ben Yu-Kuang; Jauho, Antti-Pekka

1995-01-01

We report a fully microscopic theory for the transconductivity, or, equivalently, the momentum transfer rate, of Coulomb coupled electron systems. We use the Kubo linear-response formalism and our main formal result expresses the transconductivity in terms of two fluctuation diagrams, which...

An electron beam linear scanning mode for industrial limited-angle nano-computed tomography

Science.gov (United States)

Wang, Chengxiang; Zeng, Li; Yu, Wei; Zhang, Lingli; Guo, Yumeng; Gong, Changcheng

2018-01-01

Nano-computed tomography (nano-CT), which utilizes X-rays to research the inner structure of some small objects and has been widely utilized in biomedical research, electronic technology, geology, material sciences, etc., is a high spatial resolution and non-destructive research technique. A traditional nano-CT scanning model with a very high mechanical precision and stability of object manipulator, which is difficult to reach when the scanned object is continuously rotated, is required for high resolution imaging. To reduce the scanning time and attain a stable and high resolution imaging in industrial non-destructive testing, we study an electron beam linear scanning mode of nano-CT system that can avoid mechanical vibration and object movement caused by the continuously rotated object. Furthermore, to further save the scanning time and study how small the scanning range could be considered with acceptable spatial resolution, an alternating iterative algorithm based on ℓ0 minimization is utilized to limited-angle nano-CT reconstruction problem with the electron beam linear scanning mode. The experimental results confirm the feasibility of the electron beam linear scanning mode of nano-CT system.

Design and performance of vacuum capable detector electronics for linear position sensitive neutron detectors

International Nuclear Information System (INIS)

Riedel, R.A.; Cooper, R.G.; Funk, L.L.; Clonts, L.G.

2012-01-01

We describe the design and performance of electronics for linear position sensitive neutron detectors. The eight tube assembly requires 10 W of power and can be controlled via digital communication links. The electronics can be used without modification in vacuum. Using a transimpedance amplifier and gated integration, we achieve a highly linear system with coefficient of determinations of 0.9999 or better. Typical resolution is one percent of tube length.

Design and performance of vacuum capable detector electronics for linear position sensitive neutron detectors

Energy Technology Data Exchange (ETDEWEB)

Riedel, R.A., E-mail: riedelra@ornl.gov [Oak Ridge National Laboratories, Oak Ridge, TN 37830 (United States); Cooper, R.G.; Funk, L.L.; Clonts, L.G. [Oak Ridge National Laboratories, Oak Ridge, TN 37830 (United States)

2012-02-01

We describe the design and performance of electronics for linear position sensitive neutron detectors. The eight tube assembly requires 10 W of power and can be controlled via digital communication links. The electronics can be used without modification in vacuum. Using a transimpedance amplifier and gated integration, we achieve a highly linear system with coefficient of determinations of 0.9999 or better. Typical resolution is one percent of tube length.

Investigations of electron beams from a linear accelerator

International Nuclear Information System (INIS)

Sweeney, L.E.

1981-01-01

The use of high energy electron beams from linear accelerators is becoming more prevalent in Radiation Therapy clinics. Although the basic interactions of electrons in material have been described for many years, the use of the high energy electron beams is based mostly upon measurements in the clinical setting. It is the purpose of this work to experimentally study the physical properties and apply basic concepts to analyze these measurements. Three different topics are addressed in this work. The distance to the virtual source of the electron beam is determined by a series of ionization measurements in air and in a plastic phantom as a function of distance from the accelerator. Scattering effects of the x-ray collimators and electron applicators play an important role in the clinical evaluation of the distance to the virtual source as well as the energy of the electron beam. The ionization distribution of a narrow beam of 21 MeV electrons is measured and compared to theoretical calculations. The transverse ionization distribution is measured in a water phantom and compared with Monte Carlo calculation for this energy. The depth dose distribution is measured in two distinct geometrical configurations and found to be analogous within the errors of measurement. Depth ionization and depth dose properties of a broad 21 MeV electron beam are determined for a number of homogeneous materials having different physical properties. Comparison of these measurements are described by two different scaling factors for polystyrene, water, teflon, and aluminum phantom materials. Basic physical interactions, experimental techniques and results are discussed

Parametrisation of linear accelerator electron beam for computerised dosimetry calculations

International Nuclear Information System (INIS)

Millan, P.E.; Millan, S.; Hernandez, A.; Andreo, P.

1979-01-01

A previously published age-diffusion model has been adapted to obtain parameters for the Saggittaire linear accelerator electron beams. The calculations are shown and the results discussed. A comparison is presented between measured and predicted percentage depth doses for electron beams at various energies between 10 and 32 MeV. Theoretical isodose curves are compared, for an energy of 10 MeV, with experimental curves. The parameters obtained are used for computer electron isodose curve calculation in a program called FIJOE adapted from a previously published program. This program makes it possible to correct for irregular body contours, but not for internal inhomogeneities. (UK)

In situ atomic-level observation of the formation of platinum silicide at platinum-silicon oxide interfaces under electron irradiation

Directory of Open Access Journals (Sweden)

Takeshi Nagase

2018-05-01

Full Text Available In situ atomic-level observation of the formation of Pt2Si at Pt/SiOx interface by electronic excitation under electron irradiation was performed by using scanning transmission electron microscopy. Scanning of an electron-beam probe stimulates silicide formation at the Pt/SiOx interface; the change in the Pt column corresponding to Pt2Si formation with a crystallographic orientation of (001Pt//(001Pt2Si and [110]Pt//[110]Pt2Si was observed in high-angle annular dark-field images.

Study of electron beam energy conversion at gyrocon-linear accelerator facility

International Nuclear Information System (INIS)

Karliner, M.M.; Makarov, I.G.; Ostreiko, G.N.

2004-01-01

A gyrocon together with the high-voltage 1.5 MeV accelerator ELIT-3A represents a power generator at 430 MHz serving for linear electron accelerator pulse driving. The facility description and results of calorimetric measurements of ELIT-3A electron beam power and accelerated beam at the end of accelerator are presented in the paper. The achieved energy conversion efficiency is about 55%

Transmission electron microscope interfaced with ion accelerators and its application to materials science

Energy Technology Data Exchange (ETDEWEB)

Abe, Hiroaki; Naramoto, Hiroshi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment; Hojou, Kiichi; Furuno, Shigemi; Tsukamoto, Tetsuo

1997-03-01

We have developed the transmission/analytical electron microscope interfaced with two sets of ion accelerators (TEM-Accelerators Facility) at JAERI-Takasaki. The facility is expected to provide quantitative insights into radiation effects, such as damage evolution, irradiation-induced phase transformation and their stability, through in-situ observation and analysis under ion and/or electron irradiation. The TEM-Accelerators Facility and its application to materials research are reviewed. (author)

Energetic, structural and electronic properties of metal vacancies in strained AlN/GaN interfaces.

Science.gov (United States)

Kioseoglou, J; Pontikis, V; Komninou, Ph; Pavloudis, Th; Chen, J; Karakostas, Th

2015-04-01

AlN/GaN heterostructures have been studied using density-functional pseudopotential calculations yielding the formation energies of metal vacancies under the influence of local interfacial strains, the associated charge distribution and the energies of vacancy-induced electronic states. Interfaces are built normal to the polar direction of the wurtzite structure by joining two single crystals of AlN and GaN that are a few atomic layers thick; thus, periodic boundary conditions generate two distinct heterophase interfaces. We show that the formation energy of vacancies is a function of their distance from the interfaces: the vacancy-interface interaction is found repulsive or attractive, depending on the type of the interface. When the interaction is attractive, the vacancy formation energy decreases with increasing the associated electric charge, and hence the equilibrium vacancy concentration at the interface is greater. This finding can reveal the well-known morphological differences existing between the two types of investigated interfaces. Moreover, we found that the electric charge is strongly localized around the Ga vacancy, while in the case of Al vacancies is almost uniformly distributed throughout the AlN/GaN heterostructure. Crucially, for the applications of heterostructures, metal vacancies introduce deep states in the calculated bandgap at energy levels from 0.5 to 1 eV above the valence band maximum (VBM). It is, therefore, predicted that vacancies could initiate 'green luminescence' i.e. light emission in the energy range of 2.5 eV stemming from electronic transitions between these extra levels, and the conduction band, or energy levels, due to shallow donors.

Comparative Evaluation of two Models of UPQC for Suitable Interface to Enhance Power Quality

OpenAIRE

Basu, Malabika; Das, S. P.; Dubey, Gopal

2007-01-01

Majority of the dispersed generations from renewable energy sources are connected to the grid through power electronic interface, which introduce additional harmonics in the distribution systems. Research is being carried out to integrate active filtering with specific interface such that a common power quality (PQ) platform could be achieved. For generalized solution, a unified power quality conditioner (UPQC) could be the most comprehensive PQ protecting device for sensitive non-linear load...

Plasma simulation of electron avalanche in a linear thyratron

International Nuclear Information System (INIS)

Kushner, M.J.

1985-01-01

Thyratrons typically operate at sufficiently small PD (pressure x electrode separation) that holdoff is obtained by operating on the near side of the Paschen curve, and by shielding the slot in the control grid so there is no straight line path for electrons to reach the anode from the cathode. Electron avalanche is initiated by pulsing the control grid to a high voltage. Upon collapse of voltage in the cathode-control grid space, the discharge is sustained by penetration of potential through the control grid slot into the cathode-control grid region. To better understand the electron avalanche process in multi-grid and slotted structures such as thyratrons, a plasma simulation code has been constructed. This effort is in support of a companion program in which a linear thyratron is being electrically and spectroscopically characterized

Hard X-ray PhotoElectron Spectroscopy of transition metal oxides: Bulk compounds and device-ready metal-oxide interfaces

International Nuclear Information System (INIS)

Borgatti, F.; Torelli, P.; Panaccione, G.

2016-01-01

Highlights: • Hard X-ray PhotoElectron Spectroscopy (HAXPES) applied to buried interfaces of systems involving Transition Metal Oxides. • Enhanced contribution of the s states at high kinetic energies both for valence and core level spectra. • Sensitivity to chemical changes promoted by electric field across metal-oxide interfaces in resistive switching devices. - Abstract: Photoelectron spectroscopy is one of the most powerful tool to unravel the electronic structure of strongly correlated materials also thanks to the extremely large dynamic range in energy, coupled to high energy resolution that this form of spectroscopy covers. The kinetic energy range typically used for photoelectron experiments corresponds often to a strong surface sensitivity, and this turns out to be a disadvantage for the study of transition metal oxides, systems where structural and electronic reconstruction, different oxidation state, and electronic correlation may significantly vary at the surface. We report here selected Hard X-ray PhotoElectron Spectroscopy (HAXPES) results from transition metal oxides, and from buried interfaces, where we highlight some of the important features that such bulk sensitive technique brings in the analysis of electronic properties of the solids.

Hard X-ray PhotoElectron Spectroscopy of transition metal oxides: Bulk compounds and device-ready metal-oxide interfaces

Energy Technology Data Exchange (ETDEWEB)

Borgatti, F., E-mail: francesco.borgatti@cnr.it [Istituto per lo Studio dei Materiali Nanostrutturati (ISMN), Consiglio Nazionale delle Ricerche (CNR), via P. Gobetti 101, Bologna I-40129 (Italy); Torelli, P.; Panaccione, G. [Istituto Officina dei Materiali (IOM)-CNR, Laboratorio TASC, Area Science Park, Trieste I-34149 (Italy)

2016-04-15

Highlights: • Hard X-ray PhotoElectron Spectroscopy (HAXPES) applied to buried interfaces of systems involving Transition Metal Oxides. • Enhanced contribution of the s states at high kinetic energies both for valence and core level spectra. • Sensitivity to chemical changes promoted by electric field across metal-oxide interfaces in resistive switching devices. - Abstract: Photoelectron spectroscopy is one of the most powerful tool to unravel the electronic structure of strongly correlated materials also thanks to the extremely large dynamic range in energy, coupled to high energy resolution that this form of spectroscopy covers. The kinetic energy range typically used for photoelectron experiments corresponds often to a strong surface sensitivity, and this turns out to be a disadvantage for the study of transition metal oxides, systems where structural and electronic reconstruction, different oxidation state, and electronic correlation may significantly vary at the surface. We report here selected Hard X-ray PhotoElectron Spectroscopy (HAXPES) results from transition metal oxides, and from buried interfaces, where we highlight some of the important features that such bulk sensitive technique brings in the analysis of electronic properties of the solids.

Self-consistent electronic-structure calculations for interface geometries

International Nuclear Information System (INIS)

Sowa, E.C.; Gonis, A.; MacLaren, J.M.; Zhang, X.G.

1992-01-01

This paper describes a technique for computing self-consistent electronic structures and total energies of planar defects, such as interfaces, which are embedded in an otherwise perfect crystal. As in the Layer Korringa-Kohn-Rostoker approach, the solid is treated as a set of coupled layers of atoms, using Bloch's theorem to take advantage of the two-dimensional periodicity of the individual layers. The layers are coupled using the techniques of the Real-Space Multiple-Scattering Theory, avoiding artificial slab or supercell boundary conditions. A total-energy calculation on a Cu crystal, which has been split apart at a (111) plane, is used to illustrate the method

New evidence and impact of electron transport non-linearities based on new perturbative inter-modulation analysis

Science.gov (United States)

van Berkel, M.; Kobayashi, T.; Igami, H.; Vandersteen, G.; Hogeweij, G. M. D.; Tanaka, K.; Tamura, N.; Zwart, H. J.; Kubo, S.; Ito, S.; Tsuchiya, H.; de Baar, M. R.; LHD Experiment Group

2017-12-01

A new methodology to analyze non-linear components in perturbative transport experiments is introduced. The methodology has been experimentally validated in the Large Helical Device for the electron heat transport channel. Electron cyclotron resonance heating with different modulation frequencies by two gyrotrons has been used to directly quantify the amplitude of the non-linear component at the inter-modulation frequencies. The measurements show significant quadratic non-linear contributions and also the absence of cubic and higher order components. The non-linear component is analyzed using the Volterra series, which is the non-linear generalization of transfer functions. This allows us to study the radial distribution of the non-linearity of the plasma and to reconstruct linear profiles where the measurements were not distorted by non-linearities. The reconstructed linear profiles are significantly different from the measured profiles, demonstrating the significant impact that non-linearity can have.

A note on the standard electron transfer potential at the interface between two immiscible electrolyte solutions

Czech Academy of Sciences Publication Activity Database

Samec, Zdeněk

2009-01-01

Roč. 55, č. 2 (2009), s. 75-81 ISSN 0034-6691 R&D Projects: GA ČR(CZ) GA203/07/1257 Institutional research plan: CEZ:AV0Z40400503 Keywords : interface between two immiscible electrolyte solutions * interfacial electron transfer * standard electron trasfer potential * homogeneous electron transfer Subject RIV: CG - Electrochemistry

Chitosan to Connect Biology to Electronics: Fabricating the Bio-Device Interface and Communicating Across This Interface

Directory of Open Access Journals (Sweden)

Eunkyoung Kim

2014-12-01

Full Text Available Individually, advances in microelectronics and biology transformed the way we live our lives. However, there remain few examples in which biology and electronics have been interfaced to create synergistic capabilities. We believe there are two major challenges to the integration of biological components into microelectronic systems: (i assembly of the biological components at an electrode address, and (ii communication between the assembled biological components and the underlying electrode. Chitosan possesses a unique combination of properties to meet these challenges and serve as an effective bio-device interface material. For assembly, chitosan’s pH-responsive film-forming properties allow it to “recognize” electrode-imposed signals and respond by self-assembling as a stable hydrogel film through a cathodic electrodeposition mechanism. A separate anodic electrodeposition mechanism was recently reported and this also allows chitosan hydrogel films to be assembled at an electrode address. Protein-based biofunctionality can be conferred to electrodeposited films through a variety of physical, chemical and biological methods. For communication, we are investigating redox-active catechol-modified chitosan films as an interface to bridge redox-based communication between biology and an electrode. Despite significant progress over the last decade, many questions still remain which warrants even deeper study of chitosan’s structure, properties, and functions.

Tunneling of electrons via rotor–stator molecular interfaces: Combined ab initio and model study

Energy Technology Data Exchange (ETDEWEB)

Petreska, Irina, E-mail: irina.petreska@pmf.ukim.mk [Institute of Physics, Faculty of Natural Sciences and Mathematics, Ss. Cyril and Methodius University, PO Box 162, 1000 Skopje, Former Yugolav Republic of Macedonia, The (Macedonia, The Former Yugoslav Republic of); Ohanesjan, Vladimir [Institute of Physics, Faculty of Natural Sciences and Mathematics, Ss. Cyril and Methodius University, PO Box 162, 1000 Skopje, Former Yugolav Republic of Macedonia, The (Macedonia, The Former Yugoslav Republic of); Pejov, Ljupčo [Institute of Chemistry, Department of Physical Chemistry, Ss. Cyril and Methodius University, Arhimedova 5, P.O. Box 162, 1000 Skopje, Former Yugolav Republic of Macedonia, The (Macedonia, The Former Yugoslav Republic of); Kocarev, Ljupčo [Macedonian Academy of Sciences and Arts, Krste Misirkov 2, PO Box 428, 1000 Skopje, Former Yugolav Republic of Macedonia, The (Macedonia, The Former Yugoslav Republic of); Faculty of Computer Science and Engineering, Ss. Cyril and Methodius University, Skopje, Former Yugolav Republic of Macedonia, The (Macedonia, The Former Yugoslav Republic of)

2016-07-01

Tunneling of electrons through rotor–stator anthracene aldehyde molecular interfaces is studied with a combined ab initio and model approach. Molecular electronic structure calculated from first principles is utilized to model different shapes of tunneling barriers. Together with a rectangular barrier, we also consider a sinusoidal shape that captures the effects of the molecular internal structure more realistically. Quasiclassical approach with the Simmons’ formula for current density is implemented. Special attention is paid on conformational dependence of the tunneling current. Our results confirm that the presence of the side aldehyde group enhances the interesting electronic properties of the pure anthracene molecule, making it a bistable system with geometry dependent transport properties. We also investigate the transition voltage and we show that conformation-dependent field emission could be observed in these molecular interfaces at realistically low voltages. The present study accompanies our previous work where we investigated the coherent transport via strongly coupled delocalized orbital by application of Non-equilibrium Green’s Function Formalism.

CERN: TeV Electron-Positron Linear Collider Studies; More polarization in LEP

Energy Technology Data Exchange (ETDEWEB)

Anon.

1993-09-15

The world's highest energy electronpositron collider - CERN's LEP, with a circumference of 27 kilometres - will also be the last such machine to be built as a storage ring. With interest growing in electronpositron physics at energies beyond those attainable at LEP, the next generation of electron-positron colliders must be linear if prohibitive synchrotron radiation power losses are to be avoided. Very high energy linear colliders present many technical challenges but mastery of SLC at Stanford, the world's first electron-positron linear collider, is encouraging. The physics issues of a linear collider have been examined by the international community in ICFA workshops in Saariselka, Finland (September 1991) and most recently in Hawaii (April 1993). The emerging consensus is for a collider with an initial collision energy around 500 GeV, and which can be upgraded to over 1 TeV. A range of very different collider designs are being studied at Laboratories in Europe, the US, Japan and Russia. Following the report of the 1987 CERN Long Range Planning Committee chaired by Carlo Rubbia, studies for a 2 TeV linear collider have progressed at CERN alongside work towards the Laboratory's initial objective - the LHC high energy proton-proton collider in the LEP tunnel.

CERN: TeV Electron-Positron Linear Collider Studies; More polarization in LEP

International Nuclear Information System (INIS)

Anon.

1993-01-01

The world's highest energy electronpositron collider - CERN's LEP, with a circumference of 27 kilometres - will also be the last such machine to be built as a storage ring. With interest growing in electronpositron physics at energies beyond those attainable at LEP, the next generation of electron-positron colliders must be linear if prohibitive synchrotron radiation power losses are to be avoided. Very high energy linear colliders present many technical challenges but mastery of SLC at Stanford, the world's first electron-positron linear collider, is encouraging. The physics issues of a linear collider have been examined by the international community in ICFA workshops in Saariselka, Finland (September 1991) and most recently in Hawaii (April 1993). The emerging consensus is for a collider with an initial collision energy around 500 GeV, and which can be upgraded to over 1 TeV. A range of very different collider designs are being studied at Laboratories in Europe, the US, Japan and Russia. Following the report of the 1987 CERN Long Range Planning Committee chaired by Carlo Rubbia, studies for a 2 TeV linear collider have progressed at CERN alongside work towards the Laboratory's initial objective - the LHC high energy proton-proton collider in the LEP tunnel

Organic-​organic interfaces and unoccupied electronic states of thin films of perylene and naphthalene derivatives

DEFF Research Database (Denmark)

Kamounah, Fadhil S.; Komolov, A.S; Juul Møller, Preben

2005-01-01

,4,5,8-naphthalenetetracarboxylic dianhydride (NTCDA, Fig. 1c) film surfaces, respectively, in order to form organic–organic interfaces so that molecules constituting the interfacing layers differ by the substituent group. The surface potential and the density of unoccupied electron states (DOUS) located 5–25 eV above the Fermi...

The First Two Electron Linear Accelerators in South Africa | Minnaar ...

African Journals Online (AJOL)

The electron linear accelerator is considered by many leading radiotherapy centres throughout the world as the most suitable equipment for the treatment of cancer. There are good reasons for this opinion, and some physical aspects are summarised here. S. Afr. Med. J., 48, 1004 (1974) ...

Beam-beam interaction in high energy linear electron-positron colliders

International Nuclear Information System (INIS)

Ritter, S.

1985-04-01

The interaction of high energy electron and positron beams in a linear collider has been investigated using a macroparticle Monte Carlo method based on a Cloud-In-Cells plasma simulation scheme. Density evolutions, luminosities, energy and angular distributions for electrons (positrons) and synchrotron photons are calculated. Beside beams with a symmetric transverse profile also flat beams are considered. A reasonably good agreement to alternative computer calculations as well as to an analytical approximation for the energy spectrum of synchrotron photons has been obtained. (author)

Bunch monitor for an S-band electron linear accelerator

International Nuclear Information System (INIS)

Otake, Yuji; Nakahara, Kazuo

1991-01-01

The measurement of bunch characteristics in an S-band electron linear accelerator is required in order to evaluate the quality of accelerated electron beams. A new-type bunch monitor has been developed which combines micro-stripline technology with an air insulator and wall-current monitoring technology. The obtained time resolution of the monitor was more than 150 ps. This result shows that the monitor can handle the bunch number of an S-band linac. The structure of the monitor is suitable for being installed in the vacuum area, since it is constructed of only metal and ceramic parts. It can therefore easily be employed in an actual machine

To what extent can charge localization influence electron injection efficiency at graphene-porphyrin interfaces?

KAUST Repository

Parida, Manas R.

2015-04-28

Controlling the electron transfer process at donor- acceptor interfaces is a research direction that has not yet seen much progress. Here, with careful control of the charge localization on the porphyrin macrocycle using β -Cyclodextrin as an external cage, we are able to improve the electron injection efficiency from cationic porphyrin to graphene carboxylate by 120% . The detailed reaction mechanism is also discussed.

Interfacial bonding and electronic structure of GaN/GaAs interface: A first-principles study

International Nuclear Information System (INIS)

Cao, Ruyue; Zhang, Zhaofu; Wang, Changhong; Li, Haobo; Dong, Hong; Liu, Hui; Wang, Weichao; Xie, Xinjian

2015-01-01

Understanding of GaN interfacing with GaAs is crucial for GaN to be an effective interfacial layer between high-k oxides and III-V materials with the application in high-mobility metal-oxide-semiconductor field effect transistor (MOSFET) devices. Utilizing first principles calculations, here, we investigate the structural and electronic properties of the GaN/GaAs interface with respect to the interfacial nitrogen contents. The decrease of interfacial N contents leads to more Ga dangling bonds and As-As dimers. At the N-rich limit, the interface with N concentration of 87.5% shows the most stability. Furthermore, a strong band offsets dependence on the interfacial N concentration is also observed. The valance band offset of N7 with hybrid functional calculation is 0.51 eV. The electronic structure analysis shows that significant interface states exist in all the GaN/GaAs models with various N contents, which originate from the interfacial dangling bonds and some unsaturated Ga and N atoms. These large amounts of gap states result in Fermi level pinning and essentially degrade the device performance

DFT calculations of strain and interface effects on electronic structures and magnetic properties of L10-FePt/Ag heterojunction of GMR applications

Science.gov (United States)

Pramchu, Sittichain; Jaroenjittichai, Atchara Punya; Laosiritaworn, Yongyut

2018-03-01

In this work, density functional theory (DFT) was employed to investigate the effect of strain and interface on electronic structures and magnetic properties of L10-FePt/Ag heterojunction. Two possible interface structures of L10-FePt(001)/Ag(001), that is, interface between Fe and Ag layers (Fe/Ag) and between Pt and Ag layers (Pt/Ag), were inspected. It was found that Pt/Ag interface is more stable than Fe/Ag interface due to its lower formation energy. Further, under the lattice mismatch induced tensile strain, the enhancement of magnetism for both Fe/Ag and Pt/Ag interface structures has been found to have progressed, though the magnetic moments of "interfacial" Fe and Pt atoms have been found to have decreased. To explain this further, the local density of states (LDOS) analysis suggests that interaction between Fe (Pt) and Ag near Fe/Ag (Pt/Ag) interface leads to spin symmetry breaking of the Ag atom and hence induces magnetism magnitude. In contrast, the magnetic moments of interfacial Fe and Pt atoms reduce because of the increase in the electronic states near the Fermi level of the minority-spin electrons. In addition, the significant enhancements of the LDOS near the Fermi levels of the minority-spin electrons signify the boosting of the transport properties of the minority-spin electrons and hence the spin-dependent electron transport at this ferromagnet/metal interface. From this work, it is expected that this clarification of the interfacial magnetism may inspire new innovation on how to improve spin-dependent electron transport for enhancing the giant magnetoresistance (GMR) ratio of potential GMR-based spintronic devices.

DFT calculations of strain and interface effects on electronic structures and magnetic properties of L10-FePt/Ag heterojunction of GMR applications

Directory of Open Access Journals (Sweden)

Sittichain Pramchu

2018-03-01

Full Text Available In this work, density functional theory (DFT was employed to investigate the effect of strain and interface on electronic structures and magnetic properties of L10-FePt/Ag heterojunction. Two possible interface structures of L10-FePt(001/Ag(001, that is, interface between Fe and Ag layers (Fe/Ag and between Pt and Ag layers (Pt/Ag, were inspected. It was found that Pt/Ag interface is more stable than Fe/Ag interface due to its lower formation energy. Further, under the lattice mismatch induced tensile strain, the enhancement of magnetism for both Fe/Ag and Pt/Ag interface structures has been found to have progressed, though the magnetic moments of “interfacial” Fe and Pt atoms have been found to have decreased. To explain this further, the local density of states (LDOS analysis suggests that interaction between Fe (Pt and Ag near Fe/Ag (Pt/Ag interface leads to spin symmetry breaking of the Ag atom and hence induces magnetism magnitude. In contrast, the magnetic moments of interfacial Fe and Pt atoms reduce because of the increase in the electronic states near the Fermi level of the minority-spin electrons. In addition, the significant enhancements of the LDOS near the Fermi levels of the minority-spin electrons signify the boosting of the transport properties of the minority-spin electrons and hence the spin-dependent electron transport at this ferromagnet/metal interface. From this work, it is expected that this clarification of the interfacial magnetism may inspire new innovation on how to improve spin-dependent electron transport for enhancing the giant magnetoresistance (GMR ratio of potential GMR-based spintronic devices.

Study of solute segregation at interfaces using Auger electron spectroscopy

International Nuclear Information System (INIS)

White, C.L.

1984-01-01

Interfacial segregation, often confined to within a few atomic distances of the interface, can strongly influence the processing and properties of metals and ceramics. The thinness of such solute-enriched regions can cause them to be particularly suitable for study using surface sensitive microanalytical techniques such as Auger electron spectroscopy (AES). The application of AES to studies of interfacial segregation in metals and ceramics is briefly reviewed, and several examples are presented. 43 references, 14 figures

Mikheyev-Smirnov-Wolfenstein effect for linear electron density

International Nuclear Information System (INIS)

Lehmann, H.; Osland, P.; Wu, T.T.; European Organization for Nuclear Research, Geneva

2001-01-01

When the electron density is a linear function of distance, it is known that the MSW equations for two neutrino species can be solved in terms of known functions. It is shown here that more generally, for any number of neutrino species, these MSW equations can be solved exactly in terms of single integrals. While these integrals cannot be expressed in terms of known functions, some of their simple properties are obtained. Application to the solar neutrino problem is briefly discussed. (orig.)

Mikheyev-Smirnov-Wolfenstein Effect for Linear Electron Density

CERN Document Server

Lehmann, H; Wu Tai Tsun; Lehmann, Harry; Osland, Per; Wu, Tai Tsun

2001-01-01

When the electron density is a linear function of distance, it is known that the MSW equations for two neutrino species can be solved in terms of known functions. It is shown here that more generally, for any number of neutrino species, these MSW equations can be solved exactly in terms of single integrals. While these integrals cannot be expressed in terms of known functions, some of their simple properties are obtained. Application to the solar neutrino problem is briefly discussed.

Mikheyev-Smirnov-Wolfenstein Effect for Linear Electron Density

OpenAIRE

Lehmann, H; Osland, P; Wu Tai Tsun

2000-01-01

When the electron density is a linear function of distance, it is known that the MSW equations for two neutrino species can be solved in terms of known functions. It is shown here that more generally, for any number of neutrino species, these MSW equations can be solved exactly in terms of single integrals. While these integrals cannot be expressed in terms of known functions, some of their simple properties are obtained. Application to the solar neutrino problem is briefly discussed.

Design and Fabrication of Cryostat Interface and Electronics for High Performance Antimatter Trap (HI-PAT)

Science.gov (United States)

Smith, Gerald A.

1999-01-01

Included in Appendix I to this report is a complete set of design and assembly schematics for the high vacuum inner trap assembly, cryostat interfaces and electronic components for the MSFC HI-PAT. Also included in the final report are summaries of vacuum tests, and electronic tests performed upon completion of the assembly.

Direct interaction between linear electron transfer chains and solute transport systems in bacteria

NARCIS (Netherlands)

Elferink, Marieke G.L.; Hellingwerf, Klaas J.; Belkum, Marco J. van; Poolman, Bert; Konings, Wil N.

1984-01-01

In studies on alanine and lactose transport in Rhodopseudomonas sphaeroides we have demonstrated that the rate of solute uptake in this phototrophic bacterium is regulated by the rate of light-induced cyclic electron transfer. In the present paper the interaction between linear electron transfer

Polarized positrons and electrons at the linear collider

International Nuclear Information System (INIS)

Moortgat-Pick, G.; Abe, T.; Alexander, G.; Ananthanarayan, B.; Babich, A.A.; Bharadwaj, V.; Barber, D.; Bartl, A.; Brachmann, A.; Chen, S.; Clarke, J.; Clendenin, J.E.; Dainton, J.; Desch, K.; Diehl, M.; Dobos, B.; Dorland, T.; Dreiner, H.K.; Eberl, H.; Ellis, J.

2008-01-01

The proposed International Linear Collider (ILC) is well-suited for discovering physics beyond the Standard Model and for precisely unraveling the structure of the underlying physics. The physics return can be maximized by the use of polarized beams. This report shows the paramount role of polarized beams and summarizes the benefits obtained from polarizing the positron beam, as well as the electron beam. The physics case for this option is illustrated explicitly by analyzing reference reactions in different physics scenarios. The results show that positron polarization, combined with the clean experimental environment provided by the linear collider, allows to improve strongly the potential of searches for new particles and the identification of their dynamics, which opens the road to resolve shortcomings of the Standard Model. The report also presents an overview of possible designs for polarizing both beams at the ILC, as well as for measuring their polarization

Electronic relaxation of deep bulk trap and interface state in ZnO ceramics

International Nuclear Information System (INIS)

Yang Yan; Li Sheng-Tao; Ding Can; Cheng Peng-Fei

2011-01-01

This paper investigates the electronic relaxation of deep bulk trap and interface state in ZnO ceramics based on dielectric spectra measured in a wide range of temperature, frequency and bias, in addition to the steady state response. It discusses the nature of net current flowing over the barrier affected by interface state, and then obtains temperature-dependent barrier height by approximate calculation from steady I—V (current—voltage) characteristics. Additional conductance and capacitance arising from deep bulk trap relaxation are calculated based on the displacement of the cross point between deep bulk trap and Fermi level under small AC signal. From the resonances due to deep bulk trap relaxation on dielectric spectra, the activation energies are obtained as 0.22 eV and 0.35 eV, which are consistent with the electronic levels of the main defect interstitial Zn and vacancy oxygen in the depletion layer. Under moderate bias, another resonance due to interface relaxation is shown on the dielectric spectra. The DC-like conductance is also observed in high temperature region on dielectric spectra, and the activation energy is much smaller than the barrier height in steady state condition, which is attributed to the displacement current coming from the shallow bulk trap relaxation or other factors. (fluids, plasmas and electric discharges)

Exact solution of a coupled spin–electron linear chain composed of localized Ising spins and mobile electrons

International Nuclear Information System (INIS)

Čisárová, Jana; Strečka, Jozef

2014-01-01

Exact solution of a coupled spin–electron linear chain composed of localized Ising spins and mobile electrons is found. The investigated spin–electron model is exactly solvable by the use of a transfer-matrix method after tracing out the degrees of freedom of mobile electrons delocalized over a couple of interstitial (decorating) sites. The exact ground-state phase diagram reveals an existence of five phases with different number of mobile electrons per unit cell, two of which are ferromagnetic, two are paramagnetic and one is antiferromagnetic. We have studied in particular the dependencies of compressibility and specific heat on temperature and electron density. - Highlights: • A coupled spin–electron chain composed of Ising spins and mobile electrons is exactly solved. • Quantum paramagnetic, ferromagnetic and antiferromagnetic ground states are found. • A compressibility shows a non-monotonous dependence on temperature and electron density. • Thermal dependences of specific heat display two distinct peaks

Tail state-assisted charge injection and recombination at the electron-collecting interface of P3HT:PCBM bulk-heterojunction polymer solar cells

Energy Technology Data Exchange (ETDEWEB)

Wang, He [Department of Chemical and Biological Engineering, Princeton University, Princeton, NJ 08544 (United States); Department of Electrical Engineering, Princeton University, Princeton, NJ 08544 (United States); Shah, Manas [Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States); Ganesan, Venkat [Department of Chemical Engineering, University of Texas at Austin, Austin, TX 78712 (United States); Chabinyc, Michael L. [Materials Department, University of California Santa Barbara, CA 93106 (United States); Loo, Yueh-Lin [Department of Chemical and Biological Engineering, Princeton University, Princeton, NJ 08544 (United States)

2012-12-15

The systematic insertion of thin films of P3HT and PCBM at the electron- and hole-collecting interfaces, respectively, in bulk-heterojunction polymer solar cells results in different extents of reduction in device characteristics, with the insertion of P3HT at the electron-collecting interface being less disruptive to the output currents compared to the insertion of PCBM at the hole-collecting interface. This asymmetry is attributed to differences in the tail state-assisted charge injection and recombination at the active layer-electrode interfaces. P3HT exhibits a higher density of tail states compared to PCBM; holes in these tail states can thus easily recombine with electrons at the electron-collection interface during device operation. This process is subsequently compensated by the injection of holes from the cathode into these tail states, which collectively enables net current flow through the polymer solar cell. The study presented herein thus provides a plausible explanation for why preferential segregation of P3HT to the cathode interface is inconsequential to device characteristics in P3HT:PCBM bulk-heterojunction solar cells. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Interface States in AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors

International Nuclear Information System (INIS)

Feng Qian; Du Kai; Li Yu-Kun; Shi Peng; Feng Qing

2013-01-01

Frequency-dependent capacitance and conductance measurements are performed on AlGaN/GaN high electron mobility transistors (HEMTs) and NbAlO/AlGaN/GaN metal-insulator-semiconductor HEMTs (MISHEMTs) to extract density and time constants of the trap states at NbAlO/AlGaN interface and gate/AlGaN interface with the gate-voltage biased into the accumulation region and that at the AlGaN/GaN interface with the gate-voltage biased into the depletion region in different circuit models. The measurement results indicate that the trap density at NbAlO/AlGaN interface is about one order lower than that at gate/AlGaN interface while the trap density at AlGaN/GaN interface is in the same order, so the NbAlO film can passivate the AlGaN surface effectively, which is consistent with the current collapse results

X-ray investigation of Nb/O interfaces

International Nuclear Information System (INIS)

Delheusy, Melissa

2008-01-01

X-ray free electron lasers and the future International Linear Collider project are based on the performance of niobium superconducting rf cavities for efficient particle acceleration. A remarkable increase of the rf accelerating field is usually achieved by low-temperature annealing of the cavities (T 2 O 5 , NbO 2 and NbO, from the surface to the interface. It reduces progressively upon heating from Nb 2 O 5 to NbO 2 at low temperatures, and to NbO at 300 C. The Nb(110)/NbO(111) interface presents a Nishiyama-Wassermann epitaxial orientation relationship. The depth-distribution of interstitial oxygen has been established indicating that most of the oxygen is located in the direct vicinity of the oxide/niobium interface. No evidence of oxygen depletion below the oxide layer has been observed for the low temperature thermal treatments and surface preparations investigated in this study. (orig.)

Experimental research of double-pulse linear induction electron accelerator

International Nuclear Information System (INIS)

Liao Shuqing; Cheng Cheng; Zheng Shuxin; Tang Chuanxiang; Lin Yuzheng; Jing Xiaobing; Mu Fan; Pan Haifeng

2009-01-01

The Mini-LIA is a double-pulse linear induction electron accelerator with megahertz repetition rates, which consists of a double-pulse power system, a thermal cathode electron gun, two induction cells, beam transportation systems and diagnosis systems, etc. Experiments of the Mini-LIA have been conducted. The double-pulse high voltage was obtained with several hundred nanosecond pulse intervals (i. e. megahertz repetition rate) and each pulse had an 80 kV amplitude with a FWHM of 80 ns. In the gap of the induction cell, the double-pulse accelerating electric field was measured via E-field probes, and the double-pulse electron beam with a current about 1.1 A has been obtained at the Mini-LIA exit. These experimental results show that the double-pulse high voltage with megahertz repetition rates can be generated by an insulation and junction system. And they also indicate that the induction cell with metglas as the ferromagnetic material and the LaB 6 thermal cathode electron gun suit the double-pulse operation with megahertz repetition rates. (authors)

Study and realization of an electron linear accelerator. Dynamics of accelerated electrons

International Nuclear Information System (INIS)

Bernard, J.

1966-12-01

The theoretical characteristics of the electron linear accelerator are: 30 MeV for the energy W S and 250 mA for the peak current I c . The main utilization is the intense production of fast neutrons by the reactions (γ,n) and (γ,f) induced in a target of natural uranium by the accelerated electrons. In the first part of the thesis, relative to the study and the realization of the accelerator, a new equation of dispersion is established analytically when the guide is loaded with round-edged irises. The relation is compared with the equation established by CHU and Hansen, WALKINSHAW, KVASIL in the case of a guide loaded with flat-edged irises. The experimental and theoretical curves of dispersion are compared. The accuracy of every relation of dispersion is estimated. The second part of the thesis is relative to the theoretical study of the electrons dynamics in the guide; it allows the derivation of the parameters of the beam: dispersion of phase, energy, dispersion of energy and the relation W S = f (I c ). The results relative to the first experiments are given and compared with the theoretical expectations. (author) [fr

Modeling of the atomic and electronic structures of interfaces

International Nuclear Information System (INIS)

Sutton, A.P.

1988-01-01

Recent tight binding and Car-Parrinello simulations of grain boundaries in semiconductors are reviewed. A critique is given of some models of embrittlement that are based on electronic structure considerations. The structural unit model of grain boundary structure is critically assessed using some results for mixed tilt and twist grain boundaries. A new method of characterizing interfacial structure in terms of bond angle distribution functions is described. A new formulation of thermodynamic properties of interfaces is presented which focusses on the local atomic environment. Effective, temperature dependent N-body atomic interactions are derived for studying grain boundary structure at elevated temperature

Temperature--pressure compensation for a linear accelerator electron beam dosimeter

International Nuclear Information System (INIS)

Hrejsa, A.F.; Soen, J.; Jankowiak, P.

1985-01-01

Routine weekly calibration of a Siemens Mevatron 20 linear accelerator with 3-, 5-, 7-, 10-, 12-, 15-, and 18-MeV electron energies demonstrated fluctuations in dose/monitor unit for the electron beam on the order of 3%--6%. Evaluations and study of the problem demonstrated that the electron chamber, which is open to atmosphere, was undergoing significant temperature changes during the course of a treatment day. The inability of the chamber to compensate for these changes in temperature and pressure led to the addition of a compensating circuit by the manufacturer. The results of the addition of this circuit were evaluated for several extended periods throughout the year, and it was found that the changes in dose/monitor were reduced to approximately +- 0.5%

Electron scattering at interfaces in nano-scale vertical interconnects: A combined experimental and ab initio study

Science.gov (United States)

Lanzillo, Nicholas A.; Restrepo, Oscar D.; Bhosale, Prasad S.; Cruz-Silva, Eduardo; Yang, Chih-Chao; Youp Kim, Byoung; Spooner, Terry; Standaert, Theodorus; Child, Craig; Bonilla, Griselda; Murali, Kota V. R. M.

2018-04-01

We present a combined theoretical and experimental study on the electron transport characteristics across several representative interface structures found in back-end-of-line interconnect stacks for advanced semiconductor manufacturing: Cu/Ta(N)/Co/Cu and Cu/Ta(N)/Ru/Cu. In particular, we evaluate the impact of replacing a thin TaN barrier with Ta while considering both Co and Ru as wetting layers. Both theory and experiment indicate a pronounced reduction in vertical resistance when replacing TaN with Ta, regardless of whether a Co or Ru wetting layer is used. This indicates that a significant portion of the total vertical resistance is determined by electron scattering at the Cu/Ta(N) interface. The electronic structure of these nano-sized interconnects is analyzed in terms of the atom-resolved projected density of states and k-resolved transmission spectra at the Fermi level. This work further develops a fundamental understanding of electron transport and material characteristics in nano-sized interconnects.

Materials and optimized designs for human-machine interfaces via epidermal electronics.

Science.gov (United States)

Jeong, Jae-Woong; Yeo, Woon-Hong; Akhtar, Aadeel; Norton, James J S; Kwack, Young-Jin; Li, Shuo; Jung, Sung-Young; Su, Yewang; Lee, Woosik; Xia, Jing; Cheng, Huanyu; Huang, Yonggang; Choi, Woon-Seop; Bretl, Timothy; Rogers, John A

2013-12-17

Thin, soft, and elastic electronics with physical properties well matched to the epidermis can be conformally and robustly integrated with the skin. Materials and optimized designs for such devices are presented for surface electromyography (sEMG). The findings enable sEMG from wide ranging areas of the body. The measurements have quality sufficient for advanced forms of human-machine interface. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electron linear accelerator system for natural rubber vulcanization

Science.gov (United States)

Rimjaem, S.; Kongmon, E.; Rhodes, M. W.; Saisut, J.; Thongbai, C.

2017-09-01

Development of an electron accelerator system, beam diagnostic instruments, an irradiation apparatus and electron beam processing methodology for natural rubber vulcanization is underway at the Plasma and Beam Physics Research Facility, Chiang Mai University, Thailand. The project is carried out with the aims to improve the qualities of natural rubber products. The system consists of a DC thermionic electron gun, 5-cell standing-wave radio-frequency (RF) linear accelerator (linac) with side-coupling cavities and an electron beam irradiation apparatus. This system is used to produce electron beams with an adjustable energy between 0.5 and 4 MeV and a pulse current of 10-100 mA at a pulse repetition rate of 20-400 Hz. An average absorbed dose between 160 and 640 Gy is expected to be archived for 4 MeV electron beam when the accelerator is operated at 400 Hz. The research activities focus firstly on assembling of the accelerator system, study on accelerator properties and electron beam dynamic simulations. The resonant frequency of the RF linac in π/2 operating mode is 2996.82 MHz for the operating temperature of 35 °C. The beam dynamic simulations were conducted by using the code ASTRA. Simulation results suggest that electron beams with an average energy of 4.002 MeV can be obtained when the linac accelerating gradient is 41.7 MV/m. The rms transverse beam size and normalized rms transverse emittance at the linac exit are 0.91 mm and 10.48 π mm·mrad, respectively. This information can then be used as the input data for Monte Carlo simulations to estimate the electron beam penetration depth and dose distribution in the natural rubber latex. The study results from this research will be used to define optimal conditions for natural rubber vulcanization with different electron beam energies and doses. This is very useful for development of future practical industrial accelerator units.

Electronic and interface state density properties of Cu/n-Si MIS-type diode

Energy Technology Data Exchange (ETDEWEB)

Yakuphanoglu, Fahrettin [Physics Department, Firat University, Elazig 23169 (Turkey)]. E-mail: fyhanoglu@firat.edu.tr

2007-05-01

Electronic and interface-state density properties of the Cu/n-Si diode were investigated by current-voltage and capacitance-voltage (C-V) analyses. The electronic parameters such as barrier height, ideality factor and series resistance of the diode were determined by performing different plots. The barrier height, ideality factor and series resistance values of the diode were found to be 0.69 eV, 5.31 and 7.63 k{omega}, respectively. The obtained ideality factor confirms that the Cu/n-Si device has a metal-insulator-semiconductor (MIS) configuration. The conductance mechanism of the Cu/n-Si diode is in agreement with typical of hopping conduction in polycrystalline and amorphous materials. The interface state density of the diode was found to vary from 1.45x10{sup 13} (eV{sup -1} cm{sup 2}) at E {sub C}-0.45 eV to 0.88x10{sup 13} (eV{sup -1} cm{sup 2}) at E {sub C}-0.66 eV.

Non-linear gyrokinetic simulations of microturbulence in TCV electron internal transport barriers

Science.gov (United States)

Lapillonne, X.; Brunner, S.; Sauter, O.; Villard, L.; Fable, E.; Görler, T.; Jenko, F.; Merz, F.

2011-05-01

Using the local (flux-tube) version of the Eulerian code GENE (Jenko et al 2000 Phys. Plasmas 7 1904), gyrokinetic simulations of microturbulence were carried out considering parameters relevant to electron-internal transport barriers (e-ITBs) in the TCV tokamak (Sauter et al 2005 Phys. Rev. Lett. 94 105002), generated under conditions of low or negative shear. For typical density and temperature gradients measured in such barriers, the corresponding simulated fluctuation spectra appears to simultaneously contain longer wavelength trapped electron modes (TEMs, for typically k⊥ρi 0.5). The contributions to the electron particle flux from these two types of modes are, respectively, outward/inward and may cancel each other for experimentally realistic gradients. This mechanism may partly explain the feasibility of e-ITBs. The non-linear simulation results confirm the predictions of a previously developed quasi-linear model (Fable et al 2010 Plasma Phys. Control. Fusion 52 015007), namely that the stationary condition of zero particle flux is obtained through the competitive contributions of ITG and TEM. A quantitative comparison of the electron heat flux with experimental estimates is presented as well.

Spin-polarized electron tunneling across a Si delta-doped GaMnAs/n-GaAs interface

DEFF Research Database (Denmark)

Andresen, S.E.; Sørensen, B.S.; Lindelof, P.E.

2003-01-01

Spin-polarized electron coupling across a Si delta-doped GaMnAs/n-GaAs interface was investigated. The injection of spin-polarized electrons was detected as circular polarized emission from a GaInAs/GaAs quantum well light emitting diode. The angular momentum selection rules were simplified...

Microwave system of the 7-10 MeV electron linear accelerator ALIN for medical applications

International Nuclear Information System (INIS)

Martin, D.; Iliescu, E.; Stirbet, M.; Oproiu, C.; Vintan, I.

1978-01-01

A detailed description of the Central Institute of Physics 10 MeV linear microwave system and its associated subsystems are presented. Methods of impedance matching to obtain maximum power transfer are described along with broadband design methods for transmission-line impedance transformers. Experimental results for such microwave devices are included. With respect to microwave device performances, simultaneous high efficiency and high power capability with reliability and long life at relatively low unit cost have only recently been achieved as typical device characteristics. Industrial, medical and scientific application of microwave electron accelerators have markedly influenced microwave research progress. Radiographic linear accelerators have grown substantially mainly during the past few years. Following this, the improvements of microwave device performances solicit our attention. The first electron therapy Linear Accelerator ALIN 10 marks a new stage in the development of such instrumentation. Its subsequent ALIN 15 is designed to produce a maximum energy of 18 MeV to widen its applicability in radiotherapy. In addition, a new electron linear accelerator of 8 MeV for nondestructive testing has been started. (author)

Structural and electronic properties of graphene–ZnO interfaces: dispersion-corrected density functional theory investigations

International Nuclear Information System (INIS)

Xu Pengtao; Tang Qing; Zhou Zhen

2013-01-01

Detailed first-principles computations were performed on the geometric and electronic properties of the interfaces between graphene and ZnO polar surfaces. A notable van der Waals force exists at the interface, and charge transfer occurs between graphene and ZnO as a result of the difference in their work functions. The Dirac point of graphene remains intact despite its adsorption on ZnO, implying that its interaction with ZnO does not affect the superior conductivity of graphene. Excited electrons within the energy range of 0–3 eV (versus Fermi energy) in the hybrid systems are mainly accumulated on graphene. The computations provide a theoretical explanation for the good performance of graphene/ZnO hybrid materials in photocatalysts and solar cells. (paper)

Defect Formation and Electronic Transport at AlGaN/GaN Interfaces

International Nuclear Information System (INIS)

Haller, E.E.; Hsu, Leonardo; Walukiewicz, W.

1997-01-01

We have calculated the effects of charged defects located near an Al x Ga 1-x N/GaN heterointerface on the transport properties of the two dimensional electron gas confined at the interface and also determined the distribution of those defects taking into consideration the dependence of the formation energy on the Fermi level. In addition, we have investigated the effects of hydrostatic pressure on such modulation doped heterostructures and find that pressure can be used to make the determination of the properties of the two dimensional electron gas easier by eliminating parallel three dimensional conduction paths

Calibration of an Electron Linear Accelerator using an acrylic puppet

International Nuclear Information System (INIS)

Guzman C, C.S.; Picon C, C.

1998-01-01

The finality of this work is to find the dose for electron beams using acrylic puppets and inter comparing with the measurements in water, found also its respective conversion factor. With base in this, its may be realize interesting measurements for the good performance of a linear accelerator and special clinical treatments in less time. (Author)

Electronic structure of the indium tin oxide/nanocrystalline anatase (TiO2)/ruthenium-dye interfaces in dye-sensitized solar cells

Science.gov (United States)

Lyon, J. E.; Rayan, M. K.; Beerbom, M. M.; Schlaf, R.

2008-10-01

The electronic structure of two interfaces commonly found in dye-sensitized photovoltaic cells based on nanocrystalline anatase TiO2 ("Grätzel cells") was investigated using photoemission spectroscopy (PES). X-ray photoemission spectroscopy (XPS) and ultraviolet photoemission spectroscopy (UPS) measurements were carried out on the indium tin oxide (ITO)/TiO2 and the TiO2/cis-bis(isothiocyanato)bis(2,2'-bipyridyl-4,4'-dicarboxylato)-ruthenium(II)bis-tetrabutylammonium dye ("N719" or "Ruthenium 535-bisTBA") interfaces. Both contacts were investigated using a multistep deposition procedure where the entire structure was prepared in vacuum using electrospray deposition. In between deposition steps the surface was characterized with XPS and UPS resulting in a series of spectra, allowing the determination of the orbital and band lineup at the interfaces. The results of these efforts confirm previous PES measurements on TiO2/dye contacts prepared under ambient conditions, suggesting that ambient contamination might not have significant influence on the electronic structure at the dye/TiO2 interface. The results also demonstrate that there may be a significant barrier for electron injection at the sputtered ITO/TiO2 interface and that this interface should be viewed as a semiconductor heterojunction rather than as metal-semiconductor (Schottky) contact.

Aberration-corrected transmission electron microscopy analyses of GaAs/Si interfaces in wafer-bonded multi-junction solar cells

Energy Technology Data Exchange (ETDEWEB)

Häussler, Dietrich [Institute for Materials Science, Christian-Albrechts-University Kiel, Kaiserstraße 2, 24143 Kiel (Germany); Houben, Lothar [Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Research Centre Juelich GmbH, 52425 Juelich (Germany); Essig, Stephanie [Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstraße 2, 79110 Freiburg (Germany); Kurttepeli, Mert [Institute for Materials Science, Christian-Albrechts-University Kiel, Kaiserstraße 2, 24143 Kiel (Germany); Dimroth, Frank [Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstraße 2, 79110 Freiburg (Germany); Dunin-Borkowski, Rafal E. [Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Research Centre Juelich GmbH, 52425 Juelich (Germany); Jäger, Wolfgang, E-mail: wolfgang.jaeger@tf.uni-kiel.de [Institute for Materials Science, Christian-Albrechts-University Kiel, Kaiserstraße 2, 24143 Kiel (Germany)

2013-11-15

Aberration-corrected scanning transmission electron microscopy (STEM) and electron energy loss spectroscopy (EELS) investigations have been applied to investigate the structure and composition fluctuations near interfaces in wafer-bonded multi-junction solar cells. Multi-junction solar cells are of particular interest since efficiencies well above 40% have been obtained for concentrator solar cells which are based on III-V compound semiconductors. In this methodologically oriented investigation, we explore the potential of combining aberration-corrected high-angle annular dark-field STEM imaging (HAADF-STEM) with spectroscopic techniques, such as EELS and energy-dispersive X-ray spectroscopy (EDXS), and with high-resolution transmission electron microscopy (HR-TEM), in order to analyze the effects of fast atom beam (FAB) and ion beam bombardment (IB) activation treatments on the structure and composition of bonding interfaces of wafer-bonded solar cells on Si substrates. Investigations using STEM/EELS are able to measure quantitatively and with high precision the widths and the fluctuations in element distributions within amorphous interface layers of nanometer extensions, including those of light elements. Such measurements allow the control of the activation treatments and thus support assessing electrical conductivity phenomena connected with impurity and dopant distributions near interfaces for optimized performance of the solar cells. - Highlights: • Aberration-corrected TEM and EELS reveal structural and elemental profiles across GaAs/Si bond interfaces in wafer-bonded GaInP/GaAs/Si - multi-junction solar cells. • Fluctuations in elemental concentration in nanometer-thick amorphous interface layers, including the disrubutions of light elements, are measured using EELS. • The projected widths of the interface layers are determined on the atomic scale from STEM-HAADF measurements. • The effects of atom and ion beam activation treatment on the bonding

Experimental investigation of electronic and magnetic properties of LaAlO{sub 3}-SrTiO{sub 3} interfaces

Energy Technology Data Exchange (ETDEWEB)

Richter, Christoph

2013-02-08

This thesis is an experimental study of the interface between LaAlO{sub 3} (LAO) and SrTiO{sub 3} (STO). Both materials are non-magnetic insulators. LAO-STO interfaces, however, can be conducting, and even superconducting at millikelvin temperatures. Moreover, using cantilever-based torque magnetometry we have found a ferromagnetic-like ordering at such interfaces that coexists with the superconductivity. To gain insight into the underlying electronic structure I have developed and built solid-state planar tunnel devices with LAO-STO interfaces as one tunneling electrode. Using these devices the electronic density of states (DOS) of normal- and superconducting LAO-STO interfaces was mapped with tunneling spectroscopy. Since the charge carrier density at LAO-STO interfaces is highly tunable with electrostatic gating, the spectral DOS of the 2D-superconductor could be explored across a wide T,n-phase diagram. The main result bears a striking resemblance to the pseudogap-phase of high-temperature cuprate superconductors. The appendix reports on possible technical applications of LAO-STO interfaces in field-effect transistors and integrated circuits. Furthermore, it contains extensive experimental results concerning alternative growth procedures and related material systems. The LAO-STO interface is established as a representative of a broader class of conducting oxide interfaces. In particular, a conducting oxide interface without SrTiO{sub 3}, the LaAlO{sub 3}-CaTiO{sub 3} interface, is investigated.

Transmission electron microscopy investigation of interfaces in a two-phase TiAl alloy

Science.gov (United States)

Mahon, G. J.; Howe, J. M.

1990-06-01

The atomic structures of the γ/α2 and γ/γT interfaces in a TiAl alloy were investigated using conventional and high-resolution transmission electron microscopy (TEM) in order to understand the growth mechanisms and deformation behavior of the two-phase alloy. The results show that the α2 plates grow from the γ phase by the migration of a/6 partial dislocation ledges across the faces and that the γ/α2 interface usually contains closely spaced arrays of interfacial dislocations. Deformation twins cut through both γ twin boundaries and α2 plates during deformation, although slip of twinning c slocations through α2 appears to be a difficult process. Both the γ/α2 and γ/γT interfaces can be imaged and modeled at the atomic level, although slight crystal and/or beam tilt can complicate image interpretation.

Metal/dielectric thermal interfacial transport considering cross-interface electron-phonon coupling: Theory, two-temperature molecular dynamics, and thermal circuit

Science.gov (United States)

Lu, Zexi; Wang, Yan; Ruan, Xiulin

2016-02-01

The standard two-temperature equations for electron-phonon coupled thermal transport across metal/nonmetal interfaces are modified to include the possible coupling between metal electrons with substrate phonons. The previous two-temperature molecular dynamics (TT-MD) approach is then extended to solve these equations numerically at the atomic scale, and the method is demonstrated using Cu/Si interface as an example. A key parameter in TT-MD is the nonlocal coupling distance of metal electrons and nonmetal phonons, and here we use two different approximations. The first is based on Overhauser's "joint-modes" concept, while we use an interfacial reconstruction region as the length scale of joint region rather than the phonon mean-free path as in Overhauser's original model. In this region, the metal electrons can couple to the joint phonon modes. The second approximation is the "phonon wavelength" concept where electrons couple to phonons nonlocally within the range of one phonon wavelength. Compared with the original TT-MD, including the cross-interface electron-phonon coupling can slightly reduce the total thermal boundary resistance. Whether the electron-phonon coupling within the metal block is nonlocal or not does not make an obvious difference in the heat transfer process. Based on the temperature profiles from TT-MD, we construct a new mixed series-parallel thermal circuit. We show that such a thermal circuit is essential for understanding metal/nonmetal interfacial transport, while calculating a single resistance without solving temperature profiles as done in most previous studies is generally incomplete. As a comparison, the simple series circuit that neglects the cross-interface electron-phonon coupling could overestimate the interfacial resistance, while the simple parallel circuit in the original Overhauser's model underestimates the total interfacial resistance.

Longitudinal Jitter Analysis of a Linear Accelerator Electron Gun

Directory of Open Access Journals (Sweden)

MingShan Liu

2016-11-01

Full Text Available We present measurements and analysis of the longitudinal timing jitter of a Beijing Electron Positron Collider (BEPCII linear accelerator electron gun. We simulated the longitudinal jitter effect of the gun using PARMELA to evaluate beam performance, including: beam profile, average energy, energy spread, and XY emittances. The maximum percentage difference of the beam parameters is calculated to be 100%, 13.27%, 42.24% and 65.01%, 86.81%, respectively. Due to this, the bunching efficiency is reduced to 54%. However, the longitudinal phase difference of the reference particle was 9.89°. The simulation results are in agreement with tests and are helpful to optimize the beam parameters by tuning the trigger timing of the gun during the bunching process.

Extreme mobility enhancement of two-dimensional electron gases at oxide interfaces by charge-transfer-induced modulation doping

NARCIS (Netherlands)

Chen, Yunzhong; Trier, F.; Wijnands, Tom; Green, R.J.; Gauquelin, N.; Egoavil, R.; Christensen, D.V.; Koster, Gertjan; Huijben, Mark; Bovet, N.; Macke, S.; He, F.; Sutarto, R.; Andersen, N.H.; Sulpizio, J.A.; Honig, M.; Prawiroatmodjo, G.E.D.K.; Jespersen, T.S.; Linderoth, S.; Ilani, S.; Verbeeck, J.; van Tendeloo, G.; Rijnders, Augustinus J.H.M.; Sawatzky, G.A.; Pryds, N.

2015-01-01

Two-dimensional electron gases (2DEGs) formed at the interface of insulating complex oxides promise the development of all-oxide electronic devices. These 2DEGs involve many-body interactions that give rise to a variety of physical phenomena such as superconductivity, magnetism, tunable

The metallic interface between the two band insulators LaGaO3 and SrTiO3

KAUST Repository

Nazir, Safdar; Schwingenschlö gl, Udo; Singh, Nirpendra

2011-01-01

The formation of metallic interface states between the two band insulators LaGaO3 and SrTiO3 is studied by the full-potential linearized augmented plane-wave method based on density functional theory.Structural optimization of the atomic positions points to only small changes of the chemical bonding at the interface. The n-type (LaO/TiO2) and p-type (GaO2/SrO) interfaces turn out to be metallic. Reduction of the O content increases the conductivity of the n-type interface, while the p-type interface can be turned gradually from a hole doped into an electron doped state.

The metallic interface between the two band insulators LaGaO3 and SrTiO3

KAUST Repository

Nazir, Safdar

2011-06-28

The formation of metallic interface states between the two band insulators LaGaO3 and SrTiO3 is studied by the full-potential linearized augmented plane-wave method based on density functional theory.Structural optimization of the atomic positions points to only small changes of the chemical bonding at the interface. The n-type (LaO/TiO2) and p-type (GaO2/SrO) interfaces turn out to be metallic. Reduction of the O content increases the conductivity of the n-type interface, while the p-type interface can be turned gradually from a hole doped into an electron doped state.

Conditioning of Si-interfaces by wet-chemical oxidation: Electronic interface properties study by surface photovoltage measurements

Energy Technology Data Exchange (ETDEWEB)

Angermann, Heike, E-mail: angermann@helmholtz-berlin.de

2014-09-01

Highlights: • Determination of electronic interface properties by contact-less surface photovoltage (SPV) technique. • Systematic correlations of substrate morphology and surface electronic properties. • Optimization of surface pre-treatment for flat, saw damage etched, and textured Si solar cell substrates. • Ultra-thin passivating Si oxide layers with low densities of rechargeable states by wet-chemical oxidation and subsequent annealing. • Environmentally acceptable processes, utilizing hot water, diluted HCl, or ozone low cost alternative to current approaches with concentrated chemicals. • The effect of optimized wet-chemical pre-treatments can be preserved during subsequent layer deposition. - Abstract: The field-modulated surface photovoltage (SPV) method, a very surface sensitive technique, was utilized to determine electronic interface properties on wet-chemically oxidized and etched silicon (Si) interfaces. The influence of preparation-induced surface micro-roughness and un-stoichiometric oxides on the resulting the surface charge, energetic distribution D{sub it}(E), and density D{sub it,min} of rechargeable states was studied by simultaneous, spectroscopic ellipsometry (SE) measurements on polished Si(111) and Si(100) substrates. Based on previous findings and new research, a study of conventional and newly developed wet-chemical oxidation methods was established, correlating the interactions between involved oxidizing and etching solutions and the initial substrate morphology to the final surface conditioning. It is shown, which sequences of wet-chemical oxidation and oxide removal, have to be combined in order to achieve atomically smooth, hydrogen terminated surfaces, as well as ultra-thin oxide layers with low densities of rechargeable states on flat, saw damage etched, and textured Si substrates, as commonly applied in silicon device and solar cell manufacturing. These conventional strategies for wet-chemical pre-treatment are mainly

Conditioning of Si-interfaces by wet-chemical oxidation: Electronic interface properties study by surface photovoltage measurements

International Nuclear Information System (INIS)

Angermann, Heike

2014-01-01

Highlights: • Determination of electronic interface properties by contact-less surface photovoltage (SPV) technique. • Systematic correlations of substrate morphology and surface electronic properties. • Optimization of surface pre-treatment for flat, saw damage etched, and textured Si solar cell substrates. • Ultra-thin passivating Si oxide layers with low densities of rechargeable states by wet-chemical oxidation and subsequent annealing. • Environmentally acceptable processes, utilizing hot water, diluted HCl, or ozone low cost alternative to current approaches with concentrated chemicals. • The effect of optimized wet-chemical pre-treatments can be preserved during subsequent layer deposition. - Abstract: The field-modulated surface photovoltage (SPV) method, a very surface sensitive technique, was utilized to determine electronic interface properties on wet-chemically oxidized and etched silicon (Si) interfaces. The influence of preparation-induced surface micro-roughness and un-stoichiometric oxides on the resulting the surface charge, energetic distribution D it (E), and density D it,min of rechargeable states was studied by simultaneous, spectroscopic ellipsometry (SE) measurements on polished Si(111) and Si(100) substrates. Based on previous findings and new research, a study of conventional and newly developed wet-chemical oxidation methods was established, correlating the interactions between involved oxidizing and etching solutions and the initial substrate morphology to the final surface conditioning. It is shown, which sequences of wet-chemical oxidation and oxide removal, have to be combined in order to achieve atomically smooth, hydrogen terminated surfaces, as well as ultra-thin oxide layers with low densities of rechargeable states on flat, saw damage etched, and textured Si substrates, as commonly applied in silicon device and solar cell manufacturing. These conventional strategies for wet-chemical pre-treatment are mainly based on

Stepwise approach to establishing multiple outreach laboratory information system-electronic medical record interfaces.

Science.gov (United States)

Pantanowitz, Liron; Labranche, Wayne; Lareau, William

2010-05-26

Clinical laboratory outreach business is changing as more physician practices adopt an electronic medical record (EMR). Physician connectivity with the laboratory information system (LIS) is consequently becoming more important. However, there are no reports available to assist the informatician with establishing and maintaining outreach LIS-EMR connectivity. A four-stage scheme is presented that was successfully employed to establish unidirectional and bidirectional interfaces with multiple physician EMRs. This approach involves planning (step 1), followed by interface building (step 2) with subsequent testing (step 3), and finally ongoing maintenance (step 4). The role of organized project management, software as a service (SAAS), and alternate solutions for outreach connectivity are discussed.

History of the development and manufacture of Czechoslovak high-frequency linear electron accelerators

International Nuclear Information System (INIS)

Cerny, R.

2007-01-01

The paper is structured as follows: History of linear accelerators worldwide (beginnings); Development of the Czechoslovak high-frequency linear electron accelerator (Layout and working principle; The first model of the accelerator and the Faculty of Technical and Nuclear Physics and cooperation with the Research Institute for Vacuum Electronics (VUVET); Continuing development of the accelerator at VUVET); Construction of linear accelerators at VUVET and their application (Construction of the accelerating unit; UR 4/1200 accelerator for radiation technology tests at VUVET; UR 4PR ('LUPUR') accelerator for the Nuclear Research Institute at Rez; UR 4/1200 technological accelerator for the Nuclear Research Institute at Rez; LPR4 accelerator for the Hungarian Academy of Sciences; L 4/1200 accelerators for the Research Institute of Cables and Insulators in Bratislava, CKD Semiconductors in Prague, Animal Feed Research Institute at Ivanka pri Dunaji, and Synthesia Semtin). Appendix contains paragraphs devoted to the Accelerator Dept. staff and equipment, key accelerator spare parts, and radiation safety at the accelerator department, (P.A.)

Fokker-Planck code for the quasi-linear absorption of electron cyclotron waves in a tokamak plasma

International Nuclear Information System (INIS)

Meyer, R.L.; Giruzzi, G.; Krivenski, V.

1986-01-01

We present the solution of the kinetic equation describing the quasi-linear evolution of the electron momentum distribution function under the influence of the electron cyclotron wave absorption. Coulomb collisions and the dc electric field in a tokamak plasma. The solution of the quasi-linear equation is obtained numerically using a two-dimensional initial value code following an ADI scheme. Most emphasis is given to the full non-linear and self-consistent problem, namely, the wave amplitude is evaluated at any instant and any point in space according to the actual damping. This is necessary since wave damping is a very sensitive function of the slope of the local momentum distribution function because the resonance condition relates the electron momentum to the location of wave energy deposition. (orig.)

Super toughened biodegradable polylactide blends with non-linear copolymer interfacial architecture obtained via facile in-situ reactive compatibilization

CSIR Research Space (South Africa)

Ojijo, Vincent O

2015-12-01

Full Text Available to the formation of non-linear copolymer architecture at the interface. Scanning electron microscopy showed a drastic reduction of the dispersed phase size upon compatibilization, even at very low quantities of the chain extender. Rheological probing...

Magnetic two-dimensional electron gas at the manganite-buffered LaAlO3/SrTiO3 interface

DEFF Research Database (Denmark)

R. Zhang, H.; Zhang, Y.; Zhang, H.

2017-01-01

Fabrication of highly mobile spin-polarized two-dimensional electron gas (2DEG) is crucially important for both fundamental and applied research. Usually, spin polarization appears below 10 K for the 2DEG of LaAlO3/SrTiO3 interface, stemming from the magnetic ordering of Ti3+ ions with the mediat......Fabrication of highly mobile spin-polarized two-dimensional electron gas (2DEG) is crucially important for both fundamental and applied research. Usually, spin polarization appears below 10 K for the 2DEG of LaAlO3/SrTiO3 interface, stemming from the magnetic ordering of Ti3+ ions...... with the mediation of itinerant electrons. Herein, we report a magnetic 2DEG at a La7/8Sr1/8MnO3-buffered LaAlO3/SrTiO3 interface, which simultaneously shows electrically tunable anomalous Hall effect and high conductivity. The spin-polarized temperature for the 2DEG is promoted to 30 K while the mobility remains...... high. The magnetism likely results from a gradient manganese interdiffusion into SrTiO3. The present work demonstrates the great potential of manganite-buffered LaAlO3/SrTiO3 interfaces for spintronic applications....

Symposium on electron linear accelerators in honor of Richard B. Neal's 80th birthday: Proceedings

International Nuclear Information System (INIS)

Siemann, R.H.

1998-07-01

The papers presented at the conference are: (1) the construction of SLAC and the role of R.B. Neal; (2) symposium speech; (3) lessons learned from the SLC; (4) alternate approaches to future electron-positron linear colliders; (5) the NLC technical program; (6) advanced electron linacs; (7) medical uses of linear accelerators; (8) linac-based, intense, coherent X-ray source using self-amplified spontaneous emission. Selected papers have been indexed separately for inclusion in the Energy Science and Technology Database

Discussion of feasibility to carry out intensity modulated radiation therapy in conventional medical electron linear accelerator treatment rooms

International Nuclear Information System (INIS)

Yang Haiyou; Liu Liping; Liang Yueqin; Zhang Liang; Yu Shui

2010-01-01

Objective: To investigate the feasibility about the shielding effect of conventional medical electron linear accelerator treatment in the existing rooms to carry out intensity modulated radiation therapy (IMRT). Methods: The estimation model given in NCRP REPORT No. 151- S tructural Shielding Design and Evaluation for Megavoltage X-and Gamma-Ray Radiotherapy Facilities i s adopted by linking instances, which presents the calculation methods on radiation level at the ambience of megavoltage medical electron linear accelerator treatment room. Results: The radiation level, as well as the additional annual effect dose of occupational and public at the ambience of accelerator treatment room, in crease to a certain extent, when conventional medical electron linear accelerator treatment room; are used to carry out IMRT. Conclusion: It is necessary to make environmental impact assessment for conventional medical electron linear accelerator treatment rooms, which will be used to execute IMRT. (authors)

Hermetic electronic packaging of an implantable brain-machine-interface with transcutaneous optical data communication.

Science.gov (United States)

Schuettler, Martin; Kohler, Fabian; Ordonez, Juan S; Stieglitz, Thomas

2012-01-01

Future brain-computer-interfaces (BCIs) for severely impaired patients are implanted to electrically contact the brain tissue. Avoiding percutaneous cables requires amplifier and telemetry electronics to be implanted too. We developed a hermetic package that protects the electronic circuitry of a BCI from body moisture while permitting infrared communication through the package wall made from alumina ceramic. The ceramic package is casted in medical grade silicone adhesive, for which we identified MED2-4013 as a promising candidate.

Modeling the Charge Transport in Graphene Nano Ribbon Interfaces for Nano Scale Electronic Devices

Science.gov (United States)

Kumar, Ravinder; Engles, Derick

2015-05-01

In this research work we have modeled, simulated and compared the electronic charge transport for Metal-Semiconductor-Metal interfaces of Graphene Nano Ribbons (GNR) with different geometries using First-Principle calculations and Non-Equilibrium Green's Function (NEGF) method. We modeled junctions of Armchair GNR strip sandwiched between two Zigzag strips with (Z-A-Z) and Zigzag GNR strip sandwiched between two Armchair strips with (A-Z-A) using semi-empirical Extended Huckle Theory (EHT) within the framework of Non-Equilibrium Green Function (NEGF). I-V characteristics of the interfaces were visualized for various transport parameters. The distinct changes in conductance and I-V curves reported as the Width across layers, Channel length (Central part) was varied at different bias voltages from -1V to 1 V with steps of 0.25 V. From the simulated results we observed that the conductance through A-Z-A graphene junction is in the range of 10-13 Siemens whereas the conductance through Z-A-Z graphene junction is in the range of 10-5 Siemens. These suggested conductance controlled mechanisms for the charge transport in the graphene interfaces with different geometries is important for the design of graphene based nano scale electronic devices like Graphene FETs, Sensors.

Electronic states at Si-SiO2 interface introduced by implantation of Si in thermal SiO2

International Nuclear Information System (INIS)

Kalnitsky, A.; Poindexter, E.H.; Caplan, P.J.

1990-01-01

Interface traps due to excess Si introduced into the Si-SiO 2 system by ion implantation are investigated. Implanted oxides are shown to have interface traps at or slightly above the Si conduction band edge with densities proportional to the density of off-stoichiometric Si at the Si-SiO 2 interface. Diluted oxygen annealing is shown to result in physical separation of interface traps and equilibrium substrate electrons, demonstrating that ''interface'' states are located within a 0.5 nm thick layer of SiO 2 . Possible charge trapping mechanisms are discussed and the effect of these traps on MOS transistor characteristics is described using a sheet charge model. (author)

A high-power rf linear accelerator for FELS [free-electron lasers

International Nuclear Information System (INIS)

Sheffield, R.L.; Watson, J.M.

1987-01-01

This paper describes the design of a high average current rf linear accelerator suitable for driving short-wavelength free-electron lasers (FEL). It is concluded that the design of a room-temperature rf linear acelerator that can meet the stringent requirements of a high-power short-wavelength FEL appears possible. The accelerator requires the use of an advanced photoelectric injector that is under development; the accelerator components, however, do not require appreciable development. At these large beam currents, low-frequency, large-bore room-temperature cavities can be highly efficient and give all specified performance with minimal risk. 20 refs

Nano features of Al/Au ultrasonic bond interface observed by high resolution transmission electron microscopy

International Nuclear Information System (INIS)

Ji Hongjun; Li Mingyu; Kim, Jong-Myung; Kim, Dae-Won; Wang Chunqing

2008-01-01

Nano-scale interfacial details of ultrasonic AlSi1 wire wedge bonding to a Au/Ni/Cu pad were investigated using high resolution transmission electron microscopy (HRTEM). The intermetallic phase Au 8 Al 3 formed locally due to diffusion and reaction activated by ultrasound at the Al/Au bond interface. Multilayer sub-interfaces roughly parallel to the wire/pad interface were observed among this phase, and interdiffusional features near the Au pad resembled interference patterns, alternately dark and bright bars. Solid-state diffusion theory cannot be used to explain why such a thick compound formed within milliseconds at room temperature. The major formation of metallurgical bonds was attributed to ultrasonic cyclic vibration

Ultrafast dynamics of electrons at interfaces

Energy Technology Data Exchange (ETDEWEB)

McNeill, Jason Douglas [Univ. of California, Berkeley, CA (United States)

1999-05-03

Electronic states of a thin layer of material on a surface possess unique physical and chemical properties. Some of these properties arise from the reduced dimensionality of the thin layer with respect to the bulk or the properties of the electric field where two materials of differing dielectric constants meet at an interface. Other properties are related to the nature of the surface chemical bond. Here, the properties of excess electrons in thin layers of Xenon, Krypton, and alkali metals are investigated, and the bound state energies and effective masses of the excess electrons are determined using two-photon photoemission. For Xenon, the dependence of bound state energy, effective mass, and lifetime on layer thickness from one to nine layers is examined. Not all quantities were measured at each coverage. The two photon photoemission spectra of thin layers of Xenon on a Ag(111) substrate exhibit a number of sharp, well-defined peaks. The binding energy of the excess electronic states of Xenon layers exhibited a pronounced dependence on coverage. A discrete energy shift was observed for each additional atomic layer. At low coverage, a series of states resembling a Rydberg series is observed. This series is similar to the image state series observed on clean metal surfaces. Deviations from image state energies can be described in terms of the dielectric constant of the overlayer material and its effect on the image potential. For thicker layers of Xe (beyond the first few atomic layers), the coverage dependence of the features begins to resemble that of quantum well states. Quantum well states are related to bulk band states. However, the finite thickness of the layer restricts the perpendicular wavevector to a discrete set of values. Therefore, the spectrum of quantum well states contains a series of peaks which correspond to the various allowed values of the perpendicular wavevector. Analysis of the quantum well spectrum yields electronic band structure

A model for the linear stability of the interface between aqueous humor and vitreous substitutes after vitreoretinal surgery

Science.gov (United States)

Isakova, Krystyna; Pralits, Jan O.; Repetto, Rodolfo; Romano, Mario R.

2014-12-01

We consider the motion of two immiscible viscous fluids induced by periodic oscillations of a flat solid surface along its plane. The interface between the two fluids is parallel to the solid wall; one fluid occupies the region between the wall and the interface and the other extends from the interface to infinity. We study numerically the linear stability of the interface with respect to two-dimensional perturbations using the normal mode analysis and assuming quasi-steady flow conditions. The analysis is motivated by the need of understanding the behavior of vitreous substitutes inserted in the vitreous chamber of the eye after vitrectomy. This is a common surgical procedure adopted to treat retinal detachments, whereby the vitreous humor is removed from the eye and replaced by fluids immiscible with water. Owing to their hydrophobic nature, vitreous substitutes coexist in the vitreous chamber with a certain amount of aqueous humor (the fluid produced in the anterior part of the eye) and, typically, a thin layer of aqueous separates the tamponade fluid from the retina. A common problem with this treatment is that, in some cases, the interface between the two fluids breaks down and this might eventually lead to the generation of an emulsion. It is believed that mechanics plays an important role in this process but the problem remains very poorly understood. We find that instability of the interface is possible in a range of parameters that is relevant for the problem that motivated the present analysis. This suggests that shear instability is likely a possible mechanism triggering the onset of vitreous substitutes-aqueous interface instability.

Photo-production of (99)Mo/(99m)Tc with electron linear accelerator beam.

Science.gov (United States)

Avagyan, R; Avetisyan, A; Kerobyan, I; Dallakyan, R

2014-09-01

We report on the development of a relatively new method for the production of (99)Mo/(99m)Tc. The method involves the irradiation of natural molybdenum using high-intensity bremsstrahlung photons from the electron beam of the LUE50 linear electron accelerator located at the Yerevan Physics Institute (YerPhi). The production method has been developed and shown to be successful. The linear electron accelerator at YerPhi was upgraded to allow for significant increases of the beam intensity and spatial density. The LUE50 was also instrumented by a remote control system for ease of operation. We have developed and tested the (99m)Tc extraction from the irradiation of natural MoO3. This paper reports on the optimal conditions of our method of (99)Mo production. We show the success of this method with the production and separation of the first usable amounts of (99m)Tc. Copyright © 2014 Elsevier Inc. All rights reserved.

Interface Magnetoelectric Coupling in Co/Pb(Zr,Ti)O3.

Science.gov (United States)

Vlašín, Ondřej; Jarrier, Romain; Arras, Rémi; Calmels, Lionel; Warot-Fonrose, Bénédicte; Marcelot, Cécile; Jamet, Matthieu; Ohresser, Philippe; Scheurer, Fabrice; Hertel, Riccardo; Herranz, Gervasi; Cherifi-Hertel, Salia

2016-03-23

Magnetoelectric coupling at multiferroic interfaces is a promising route toward the nonvolatile electric-field control of magnetization. Here, we use optical measurements to study the static and dynamic variations of the interface magnetization induced by an electric field in Co/PbZr0.2Ti0.8O3 (Co/PZT) bilayers at room temperature. The measurements allow us to identify different coupling mechanisms. We further investigate the local electronic and magnetic structure of the interface by means of transmission electron microscopy, soft X-ray magnetic circular dichroism, and density functional theory to corroborate the coupling mechanism. The measurements demonstrate a mixed linear and quadratic optical response to the electric field, which results from a magneto-electro-optical effect. We propose a decomposition method of the optical signal to discriminate between different components involved in the electric field-induced polarization rotation of the reflected light. This allows us to extract a signal that we can ascribe to interface magnetoelectric coupling. The associated surface magnetization exhibits a clear hysteretic variation of odd symmetry with respect to the electric field and nonzero remanence. The interface coupling is remarkably stable over a wide frequency range (1-50 kHz), and the application of a bias magnetic field is not necessary for the coupling to occur. These results show the potential of exploiting interface coupling with the prospect of optimizing the performance of magnetoelectric memory devices in terms of stability, as well as fast and dissipationless operation.

Shielding considerations for an electron linear accelerator complex for high energy physics and photonics research

International Nuclear Information System (INIS)

Holmes, J.A.; Huntzinger, C.J.

1987-01-01

Radiation shielding considerations for a major high-energy physics and photonics research complex which comprise a 50 MeV electron linear accelerator injector, a 1.0 GeV electron linear accelerator and a 1.3 GeV storage ring are discussed. The facilities will be unique because of the close proximity of personnel to the accelerator beam lines, the need to adapt existing facilities and shielding materials and the application of strict ALARA dose guidelines while providing maximum access and flexibility during a phased construction program

Restrictions on the Quasi-Linear Description of Electron-Chorus Interaction in the Earth's Magnetosphere

Science.gov (United States)

Khazanov, George V.; Sibeck, David G.

2013-01-01

The interaction of electrons with coherent chorus waves in the random phase approximation can be described as quasi-linear diffusion for waves with amplitudes below some limit. The limit is calculated for relativistic and non-relativistic electrons. For stronger waves, the friction force should be taken into account.

Spin physics with polarized electrons at the SLC [Stanford Linear Collider

International Nuclear Information System (INIS)

Moffeit, K.C.

1990-11-01

The Stanford Linear Collider was designed to accommodate polarized electron beams. A gallium arsenide-based photon emission source will provide a beam of longitudinally polarized electrons of about 40 percent polarization. A system of bend magnets and a superconducting solenoid will be used to rotate the spins so that the polarization is preserved while the 1.21 GeV electrons are stored in the damping ring. Another set of bend magnets and two superconducting solenoids orient the spin vectors so that longitudinal polarization of the electrons is achieved at the collision point with the unpolarized positions. A system to monitor the polarization based on Moeller and Compton scattering will be used. Spin physics with longitudinally polarized electrons uses the measurement of the left-right asymmetry to provide tests of the Standard Model. The uncertainty in the measurement is precise enough to be sensitive to the effects of particles which can not be produced directly in the machines we have today. 5 refs

Metallic Interface Emerging at Magnetic Domain Wall of Antiferromagnetic Insulator: Fate of Extinct Weyl Electrons

Directory of Open Access Journals (Sweden)

Youhei Yamaji

2014-05-01

Full Text Available Topological insulators, in contrast to ordinary semiconductors, accompany protected metallic surfaces described by Dirac-type fermions. Here, we theoretically show that another emergent two-dimensional metal embedded in the bulk insulator is realized at a magnetic domain wall. The domain wall has long been studied as an ingredient of both old-fashioned and leading-edge spintronics. The domain wall here, as an interface of seemingly trivial antiferromagnetic insulators, emergently realizes a functional interface preserved by zero modes with robust two-dimensional Fermi surfaces, where pyrochlore iridium oxides proposed to host the condensed-matter realization of Weyl fermions offer such examples at low temperatures. The existence of in-gap states that are pinned at domain walls, theoretically resembling spin or charge solitons in polyacetylene, and protected as the edges of hidden one-dimensional weak Chern insulators characterized by a zero-dimensional class-A topological invariant, solves experimental puzzles observed in R_{2}Ir_{2}O_{7} with rare-earth elements R. The domain wall realizes a novel quantum confinement of electrons and embosses a net uniform magnetization that enables magnetic control of electronic interface transports beyond the semiconductor paradigm.

Ultrafast electron injection at the cationic porphyrin-graphene interface assisted by molecular flattening

KAUST Repository

Aly, Shawkat Mohammede; Parida, Manas R.; Alarousu, Erkki; Mohammed, Omar F.

2014-01-01

The steady-state and femtosecond (fs) time-resolved data clearly demonstrate that the charge transfer (CT) process at the porphyrin-graphene carboxylate (GC) interfaces can be tuned from zero to very sufficient and ultrafast by changing the electronic structure of the meso unit and the redox properties of the porphyrin cavity. This journal is © the Partner Organisations 2014.

In-Situ TEM Study of Interface Sliding and Migration in an Ultrafine Lamellar Structure

Energy Technology Data Exchange (ETDEWEB)

Hsiung, L M

2005-12-06

The instability of interfaces in an ultrafine TiAl-({gamma})/Ti{sub 3}Al-({alpha}{sub 2}) lamellar structure by straining at room temperature has been investigated using in-situ straining techniques performed in a transmission electron microscope. The purpose of this study is to obtain experimental evidence to support the creep mechanisms based upon the interface sliding in association with a cooperative movement of interfacial dislocations previously proposed to interpret the nearly linear creep behavior observed from ultrafine lamellar TiAl alloys. The results have revealed that both the sliding and migration of lamellar interfaces can take place simultaneously as a result of the cooperative movement of interfacial dislocations.

Gate-tunable polarized phase of two-dimensional electrons at the LaAlO3/SrTiO3 interface.

Science.gov (United States)

Joshua, Arjun; Ruhman, Jonathan; Pecker, Sharon; Altman, Ehud; Ilani, Shahal

2013-06-11

Controlling the coupling between localized spins and itinerant electrons can lead to exotic magnetic states. A novel system featuring local magnetic moments and extended 2D electrons is the interface between LaAlO3 and SrTiO3. The magnetism of the interface, however, was observed to be insensitive to the presence of these electrons and is believed to arise solely from extrinsic sources like oxygen vacancies and strain. Here we show the existence of unconventional electronic phases in the LaAlO3/SrTiO3 system pointing to an underlying tunable coupling between itinerant electrons and localized moments. Using anisotropic magnetoresistance and anomalous Hall effect measurements in a unique in-plane configuration, we identify two distinct phases in the space of carrier density and magnetic field. At high densities and fields, the electronic system is strongly polarized and shows a response, which is highly anisotropic along the crystalline directions. Surprisingly, below a density-dependent critical field, the polarization and anisotropy vanish whereas the resistivity sharply rises. The unprecedented vanishing of the easy axes below a critical field is in sharp contrast with other coupled magnetic systems and indicates strong coupling with the moments that depends on the symmetry of the itinerant electrons. The observed interplay between the two phases indicates the nature of magnetism at the LaAlO3/SrTiO3 interface as both having an intrinsic origin and being tunable.

Linear and nonlinear dynamics of electron temperature gradient mode in non-Maxwellian plasmas

Energy Technology Data Exchange (ETDEWEB)

Zakir, U.; Qamar, A. [Institute of Physics and Electronics, University of Peshawar, Peshawar (Pakistan); Haque, Q. [Theoretical Plasma Physics Division, PINSTECH, Islamabad (Pakistan); National Centre for Physics, Islamabad (Pakistan)

2013-05-15

The effect of non-Maxwellian distributed ions on electron temperature gradient mode is investigated. The linear dispersion relation of η{sub e}−mode is obtained which shows that the behavior of this mode changes in the presence of superthermal ions. The growth rate of η{sub e}−mode driven linear instability is found and is observed to modify due to nonthermal ions. However, it is found that this leaves the electron energy transport coefficient unchanged. In the nonlinear regime, a dipolar vortex solution is derived which indicates that the dynamic behavior of the vortices changes with the inclusion of kappa distributed ions. The importance of present study with respect to space and laboratory plasmas is also pointed out.

Linear mixed-effects models for within-participant psychology experiments: an introductory tutorial and free, graphical user interface (LMMgui).

Science.gov (United States)

Magezi, David A

2015-01-01

Linear mixed-effects models (LMMs) are increasingly being used for data analysis in cognitive neuroscience and experimental psychology, where within-participant designs are common. The current article provides an introductory review of the use of LMMs for within-participant data analysis and describes a free, simple, graphical user interface (LMMgui). LMMgui uses the package lme4 (Bates et al., 2014a,b) in the statistical environment R (R Core Team).

Stepwise approach to establishing multiple outreach laboratory information system-electronic medical record interfaces

Directory of Open Access Journals (Sweden)

Liron Pantanowitz

2010-01-01

Full Text Available Clinical laboratory outreach business is changing as more physician practices adopt an electronic medical record (EMR. Physician connectivity with the laboratory information system (LIS is consequently becoming more important. However, there are no reports available to assist the informatician with establishing and maintaining outreach LIS-EMR connectivity. A four-stage scheme is presented that was successfully employed to establish unidirectional and bidirectional interfaces with multiple physician EMRs. This approach involves planning (step 1, followed by interface building (step 2 with subsequent testing (step 3, and finally ongoing maintenance (step 4. The role of organized project management, software as a service (SAAS, and alternate solutions for outreach connectivity are discussed.

[Experiment studies of electron-positron interactions at the Stanford Linear Accelerator Center

International Nuclear Information System (INIS)

Hertzbach, S.S.; Kofler, R.R.

1993-01-01

The High Energy Physics group at the University of Massachusetts has continued its' program of experimental studies of electron-positron interactions at the Stanford Linear Accelerator Center (SLAC). The group activities have included: analysis of data taken between 1982 and 1990 with the TPC detector at the PEP facility, continuing data collection and data analysis using the SLC/SLD facility, planning for the newly approved B-factory at SLAC, and participation in design studies for future high energy linear colliders. This report will briefly summarize these activities

Linear temperature behavior of thermopower and strong electron-electron scattering in thick F-doped SnO2 films

Science.gov (United States)

Lang, Wen-Jing; Li, Zhi-Qing

2014-07-01

Both the semi-classical and quantum transport properties of F-doped SnO2 thick films (˜1 μm) were investigated experimentally. We found that the resistivity caused by the thermal phonons obeys Bloch-Grüneisen law from ˜90 to 300 K, while only the diffusive thermopower, which varies linearly with temperature from 300 down to 10 K, can be observed. The phonon-drag thermopower is completely suppressed due to the long electron-phonon relaxation time in the compound. These observations, together with the fact that the carrier concentration has negligible temperature dependence, indicate that the conduction electrons in F-doped SnO2 films possess free-electron-like characteristics. At low temperatures, the electron-electron scattering dominates over the electron-phonon scattering and governs the inelastic scattering process. The theoretical predications of scattering rates of large- and small-energy-transfer electron-electron scattering processes, which are negligibly weak in three-dimensional disordered conventional conductors, are quantitatively tested in this lower carrier concentration and free-electron-like highly degenerate semiconductor.

Linear temperature behavior of thermopower and strong electron-electron scattering in thick F-doped SnO2 films

International Nuclear Information System (INIS)

Lang, Wen-Jing; Li, Zhi-Qing

2014-01-01

Both the semi-classical and quantum transport properties of F-doped SnO 2 thick films (∼1 μm) were investigated experimentally. We found that the resistivity caused by the thermal phonons obeys Bloch-Grüneisen law from ∼90 to 300 K, while only the diffusive thermopower, which varies linearly with temperature from 300 down to 10 K, can be observed. The phonon-drag thermopower is completely suppressed due to the long electron-phonon relaxation time in the compound. These observations, together with the fact that the carrier concentration has negligible temperature dependence, indicate that the conduction electrons in F-doped SnO 2 films possess free-electron-like characteristics. At low temperatures, the electron-electron scattering dominates over the electron-phonon scattering and governs the inelastic scattering process. The theoretical predications of scattering rates of large- and small-energy-transfer electron-electron scattering processes, which are negligibly weak in three-dimensional disordered conventional conductors, are quantitatively tested in this lower carrier concentration and free-electron-like highly degenerate semiconductor.

Formation of a conducting LaAlO3/SrTiO3 interface studied by low-energy electron reflection during growth

Science.gov (United States)

van der Torren, A. J. H.; Liao, Z.; Xu, C.; Gauquelin, N.; Yin, C.; Aarts, J.; van der Molen, S. J.

2017-12-01

The two-dimensional electron gas occurring between the band insulators SrTiO3 and LaAlO3 continues to attract considerable interest, due to the possibility of dynamic control over the carrier density and due to ensuing phenomena such as magnetism and superconductivity. The formation of this conducting interface is sensitive to the growth conditions, but despite numerous investigations there are still questions about the details of the physics involved. In particular, not much is known about the electronic structure of the growing LaAlO3 layer at the growth temperature (around 800°C) in oxygen (pressure around 5 ×10-5 mbar), since analysis techniques at these conditions are not readily available. We developed a pulsed laser deposition system inside a low-energy electron microscope in order to study this issue. The setup allows for layer-by-layer growth control and in situ measurements of the angle-dependent electron reflection intensity, which can be used as a fingerprint of the electronic structure of the surface layers during growth. By using different substrate terminations and growth conditions we observe two families of reflectivity maps, which we can connect either to samples with an AlO2-rich surface and a conducting interface or to samples with a LaO-rich surface and an insulating interface. Our observations emphasize that substrate termination and stoichiometry determine the electronic structure of the growing layer, and thereby the conductance of the interface.

Non-linear gyrokinetic simulations of microturbulence in TCV electron internal transport barriers

Energy Technology Data Exchange (ETDEWEB)

Lapillonne, X; Brunner, S; Sauter, O; Villard, L [Centre de Recherches en Physique des Plasmas, Association EURATOM-Confederation Suisse, Ecole Polytechnique Federale de Lausanne, CH-1015 Lausanne (Switzerland); Fable, E; Goerler, T; Jenko, F; Merz, F, E-mail: stephan.brunner@epfl.ch [Max-Planck-Institut fuer Plasmaphysik, EURATOM Association, Boltzmannstrasse 2, D-85748 Garching (Germany)

2011-05-15

Using the local (flux-tube) version of the Eulerian code GENE (Jenko et al 2000 Phys. Plasmas 7 1904), gyrokinetic simulations of microturbulence were carried out considering parameters relevant to electron-internal transport barriers (e-ITBs) in the TCV tokamak (Sauter et al 2005 Phys. Rev. Lett. 94 105002), generated under conditions of low or negative shear. For typical density and temperature gradients measured in such barriers, the corresponding simulated fluctuation spectra appears to simultaneously contain longer wavelength trapped electron modes (TEMs, for typically k{sub p}erpendicular{rho}{sub i} < 0.5, k{sub p}erpendicular being the characteristic perpendicular wavenumber and {rho}{sub i} the ion Larmor radius) and shorter wavelength ion temperature gradient modes (ITG, k{sub p}erpendicular{rho}{sub i} > 0.5). The contributions to the electron particle flux from these two types of modes are, respectively, outward/inward and may cancel each other for experimentally realistic gradients. This mechanism may partly explain the feasibility of e-ITBs. The non-linear simulation results confirm the predictions of a previously developed quasi-linear model (Fable et al 2010 Plasma Phys. Control. Fusion 52 015007), namely that the stationary condition of zero particle flux is obtained through the competitive contributions of ITG and TEM. A quantitative comparison of the electron heat flux with experimental estimates is presented as well.

Electronic structures and stability of Ni/Bi2Te3 and Co/Bi2Te3 interfaces

International Nuclear Information System (INIS)

Xiong Ka; Wang Weichao; Alshareef, Husam N; Gupta, Rahul P; Gnade, Bruce E; Cho, Kyeongjae; White, John B

2010-01-01

We investigate the electronic structures and stability for Ni/Bi 2 Te 3 , NiTe/Bi 2 Te 3 , Co/Bi 2 Te 3 and CoTe 2 /Bi 2 Te 3 interfaces by first-principles calculations. It is found that the surface termination strongly affects the band alignment. Ni and Co are found to form Ohmic contacts to Bi 2 Te 3 . The interface formation energy for Co/Bi 2 Te 3 interfaces is much lower than that of Ni/Bi 2 Te 3 interfaces. Furthermore, we found that NiTe on Bi 2 Te 3 is more stable than Ni, while the formation energies for Co and CoTe 2 on Bi 2 Te 3 are comparable.

Design of a self-focusing linear electron accelerator

International Nuclear Information System (INIS)

Hddab, S.

1983-06-01

In this report we tackle the principal physical and technical problems related to the design of a self-focusing linear electron accelerator. The study of the dynamic phenomena occurring at the entrance to the first resonant cell allows us, by an adequate choice of the longitudinal height of this cell, to avoid the use of an external magnetic focusing coil. Optimization of the ultra high frequency properties of the resonant structure has been achieved by polishing the internal surfaces of the cavities, by adapting a new brazing technique and optimizing the geometry of the cells. A simulation code has been adapted to an interactive use on microcomputer [fr

Electronic excitation of atoms and molecules by electron impact in a linear algebraic, separable potential approach

International Nuclear Information System (INIS)

Collins, L.A.; Schneider, B.I.

1984-01-01

The linear algebraic, separable potential approach is applied to the electronic excitation of atoms and molecules by electron impact. By representing the exchange and off-diagonal direct terms on a basis, the standard set of coupled inelastic equations is reduced to a set of elastic inhomogeneous equations. The procedure greatly simplifies the formulation by allowing a large portion of the problem to be handled by standard bound-state techniques and by greatly reducing the order of the scattering equations that must be solved. Application is made to the excitation of atomic hydrogen in the three-state close-coupling (1s, 2s, 2p) approximation. (author)

Ultrafast static and diffusion-controlled electron transfer at Ag 29 nanocluster/molecular acceptor interfaces

KAUST Repository

Aly, Shawkat Mohammede; AbdulHalim, Lina G.; Besong, Tabot M.D.; Soldan, Giada; Bakr, Osman; Mohammed, Omar F.

2015-01-01

Efficient absorption of visible light and a long-lived excited state lifetime of silver nanoclusters (Ag29 NCs) are integral properties for these new clusters to serve as light-harvesting materials. Upon optical excitation, electron injection at Ag29 NC/methyl viologen (MV2+) interfaces is very efficient and ultrafast. Interestingly, our femto- and nanosecond time-resolved results demonstrate clearly that both dynamic and static electron transfer mechanisms are involved in photoluminescence quenching of Ag29 NCs. © 2016 The Royal Society of Chemistry.

Ultrafast static and diffusion-controlled electron transfer at Ag 29 nanocluster/molecular acceptor interfaces

KAUST Repository

Aly, Shawkat Mohammede

2015-10-29

Efficient absorption of visible light and a long-lived excited state lifetime of silver nanoclusters (Ag29 NCs) are integral properties for these new clusters to serve as light-harvesting materials. Upon optical excitation, electron injection at Ag29 NC/methyl viologen (MV2+) interfaces is very efficient and ultrafast. Interestingly, our femto- and nanosecond time-resolved results demonstrate clearly that both dynamic and static electron transfer mechanisms are involved in photoluminescence quenching of Ag29 NCs. © 2016 The Royal Society of Chemistry.

Electronic properties of semiconductor surfaces and metal/semiconductor interfaces

Energy Technology Data Exchange (ETDEWEB)

Tallarida, M.

2005-05-15

This thesis reports investigations of the electronic properties of a semiconductor surface (silicon carbide), a reactive metal/semiconductor interface (manganese/silicon) and a non-reactive metal/semiconductor interface (aluminum-magnesium alloy/silicon). The (2 x 1) reconstruction of the 6H-SiC(0001) surface has been obtained by cleaving the sample along the (0001) direction. This reconstruction has not been observed up to now for this compound, and has been compared with those of similar elemental semiconductors of the fourth group of the periodic table. This comparison has been carried out by making use of photoemission spectroscopy, analyzing the core level shifts of both Si 2p and C 1s core levels in terms of charge transfer between atoms of both elements and in different chemical environments. From this comparison, a difference between the reconstruction on the Si-terminated and the C-terminated surface was established, due to the ionic nature of the Si-C bond. The growth of manganese films on Si(111) in the 1-5 ML thickness range has been studied by means of LEED, STM and photoemission spectroscopy. By the complementary use of these surface science techniques, two different phases have been observed for two thickness regimes (<1 ML and >1 ML), which exhibit a different electronic character. The two reconstructions, the (1 x 1)-phase and the ({radical}3 x {radical}3)R30 -phase, are due to silicide formation, as observed in core level spectroscopy. The growth proceeds via island formation in the monolayer regime, while the thicker films show flat layers interrupted by deep holes. On the basis of STM investigations, this growth mode has been attributed to strain due to lattice mismatch between the substrate and the silicide. Co-deposition of Al and Mg onto a Si(111) substrate at low temperature (100K) resulted in the formation of thin alloy films. By varying the relative content of both elements, the thin films exhibited different electronic properties

A case study on better iconographic design in electronic medical records' user interface.

Science.gov (United States)

Tasa, Umut Burcu; Ozcan, Oguzhan; Yantac, Asim Evren; Unluer, Ayca

2008-06-01

It is a known fact that there is a conflict between what users expect and what user interface designers create in the field of medical informatics along with other fields of interface design. The objective of the study is to suggest, from the 'design art' perspective, a method for improving the usability of an electronic medical record (EMR) interface. The suggestion is based on the hypothesis that the user interface of an EMR should be iconographic. The proposed three-step method consists of a questionnaire survey on how hospital users perceive concepts/terms that are going to be used in the EMR user interface. Then icons associated with the terms are designed by a designer, following a guideline which is prepared according to the results of the first questionnaire. Finally the icons are asked back to the target group for proof. A case study was conducted with 64 medical staff and 30 professional designers for the first questionnaire, and with 30 medical staff for the second. In the second questionnaire 7.53 icons out of 10 were matched correctly with a standard deviation of 0.98. Also, all icons except three were matched correctly in at least 83.3% of the forms. The proposed new method differs from the majority of previous studies which are based on user requirements by leaning on user experiments instead. The study demonstrated that the user interface of EMRs should be designed according to a guideline that results from a survey on users' experiences on metaphoric perception of the terms.

Electronic properties of metal-In{sub 2}O{sub 3} interfaces

Energy Technology Data Exchange (ETDEWEB)

Nazarzadehmoafi, Maryam

2017-02-22

The behavior of the electronic properties of as-cleaved melt-grown In{sub 2}O{sub 3} (111) single crystals was studied upon noble metals, In and Sn deposition using angle-resolved photoemission spectroscopy. The stoichiometry, structural quality and crystal orientation, surface morphology, and the electron concentration were examined by energy dispersive X-ray spectroscopy, Laue diffraction, scanning tunneling microscopy (STM), and Hall-effect measurement, respectively. The similarity of the measured-fundamental and surface-band gaps reveals the nearly flat behavior of the bands at the as-cleaved surface of the crystals. Ag and Au/In{sub 2}O{sub 3} interfaces show Schottky behavior, while an ohmic one was observed in Cu, In, and Sn/In{sub 2}O{sub 3} contacts. From agreement of the bulk and surface band gaps, rectifying contact formation as well as the occurrence of photovoltage effect at the pristine surface of the crystals, it can be deduced that SEAL is not an intrinsic property of the as-cleaved surface of the studied crystals. Moreover, for thick Au and Cu overlayer regime at room temperature, Shockley-like surface states were observed. Additionally, the initial stage of Cu and In growth on In{sub 2}O{sub 3} was accompanied by the formation of a two dimensional electron gas (2DEG) fading away for higher coverages which are not associated with the earlier-detected 2DEG at the surface of In{sub 2}O{sub 3} thin films. The application of the Schottky-Mott rule, using in situ-measured work functions of In{sub 2}O{sub 3} and the metals, showed a strong disagreement for all the interfaces except for Ag/In{sub 2}O{sub 3}. The experimental data also disagree with more advanced theories based on the electronegativity concept and metal-induced gap states models.

Electronic and magnetic properties of the Co{sub 2}MnAl/Au interface: Relevance of the Heusler alloy termination

Energy Technology Data Exchange (ETDEWEB)

Makinistian, L., E-mail: lmakinistian@santafe-conicet.gov.ar [Instituto de Física del Litoral (CONICET-UNL), Güemes 3450, 3000 Santa Fe (Argentina); Facultad de Ingeniería, Universidad Nacional de Entre Ríos, 3101 Oro Verde (Argentina); Albanesi, E.A. [Instituto de Física del Litoral (CONICET-UNL), Güemes 3450, 3000 Santa Fe (Argentina); Facultad de Ingeniería, Universidad Nacional de Entre Ríos, 3101 Oro Verde (Argentina)

2015-07-01

We present ab initio calculations of electronic and magnetic properties of the ferromagnetic metal/normal metal (F/N) interface of the Heusler alloy Co{sub 2}MnAl and gold. Two structural models are implemented: one with the ferromagnet slab terminated in a pure cobalt plane (“Co{sub 2}-t”), and the other with it terminated with a plane of MnAl (“MnAl-t”). The relaxed optimum distance between the slabs is determined for the two models before densities of states, magnetic moments, and the electric potential are resolved and analyzed layer by layer through the interface. Complementary, calculations for the free surfaces of gold and the Heusler alloy (for both models, Co{sub 2}-t and MnAl-t) are performed for a better interpretation of the physics of the interface. We predict important differences between the two models, suggesting that both terminations are to be expected to display sensibly different spin injection performances. - Highlights: • Ab initio electronic and magnetic properties of the interface Co{sub 2}MnAl/Au. • Two terminations were studied: Co{sub 2} and MnAl terminated. • The termination of the Heusler alloy sensibly determines the interface properties. • The Co{sub 2} terminated interface displays a higher spin polarization.

Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study

Directory of Open Access Journals (Sweden)

Valeri V. Afanas'ev

2014-01-01

Full Text Available Evolution of the electron energy band alignment at interfaces between different semiconductors and wide-gap oxide insulators is examined using the internal photoemission spectroscopy, which is based on observations of optically-induced electron (or hole transitions across the semiconductor/insulator barrier. Interfaces of various semiconductors ranging from the conventional silicon to the high-mobility Ge-based (Ge, Si1-xGex, Ge1-xSnx and AIIIBV group (GaAs, InxGa1-xAs, InAs, GaP, InP, GaSb, InSb materials were studied revealing several general trends in the evolution of band offsets. It is found that in the oxides of metals with cation radii larger than ≈0.7 Å, the oxide valence band top remains nearly at the same energy (±0.2 eV irrespective of the cation sort. Using this result, it becomes possible to predict the interface band alignment between oxides and semiconductors as well as between dissimilar insulating oxides on the basis of the oxide bandgap width which are also affected by crystallization. By contrast, oxides of light elements, for example, Be, Mg, Al, Si, and Sc exhibit significant shifts of the valence band top. General trends in band lineup variations caused by a change in the composition of semiconductor photoemission material are also revealed.

An L-Band Polarized Electron PWT Photoinjector for the International Linear Collider (ILC)

CERN Document Server

Yu, David; Chen Ping; Lundquist, Martin; Luo, Yan; Smirnov, Alexei Yu

2005-01-01

A multi-cell, standing-wave, L-band, p-mode, plane-wave-transformer (PWT) photoinjector with an integrated photocathode in a novel linac structure is proposed by DULY Research Inc. as a polarized electron source. The PWT photoinjector is capable of operation in ultra high vacuum and moderate field gradient. Expected performance of an L-band polarized electron PWT injector operating under the parameters for the International Linear Collider is presented. The projected normalized transverse rms emittance is an order of magnitude lower than that produced with a polarized electron dc gun followed by subharmonic bunchers.

Extending the Solvation-Layer Interface Condition Continum Electrostatic Model to a Linearized Poisson-Boltzmann Solvent.

Science.gov (United States)

Molavi Tabrizi, Amirhossein; Goossens, Spencer; Mehdizadeh Rahimi, Ali; Cooper, Christopher D; Knepley, Matthew G; Bardhan, Jaydeep P

2017-06-13

We extend the linearized Poisson-Boltzmann (LPB) continuum electrostatic model for molecular solvation to address charge-hydration asymmetry. Our new solvation-layer interface condition (SLIC)/LPB corrects for first-shell response by perturbing the traditional continuum-theory interface conditions at the protein-solvent and the Stern-layer interfaces. We also present a GPU-accelerated treecode implementation capable of simulating large proteins, and our results demonstrate that the new model exhibits significant accuracy improvements over traditional LPB models, while reducing the number of fitting parameters from dozens (atomic radii) to just five parameters, which have physical meanings related to first-shell water behavior at an uncharged interface. In particular, atom radii in the SLIC model are not optimized but uniformly scaled from their Lennard-Jones radii. Compared to explicit-solvent free-energy calculations of individual atoms in small molecules, SLIC/LPB is significantly more accurate than standard parametrizations (RMS error 0.55 kcal/mol for SLIC, compared to RMS error of 3.05 kcal/mol for standard LPB). On parametrizing the electrostatic model with a simple nonpolar component for total molecular solvation free energies, our model predicts octanol/water transfer free energies with an RMS error 1.07 kcal/mol. A more detailed assessment illustrates that standard continuum electrostatic models reproduce total charging free energies via a compensation of significant errors in atomic self-energies; this finding offers a window into improving the accuracy of Generalized-Born theories and other coarse-grained models. Most remarkably, the SLIC model also reproduces positive charging free energies for atoms in hydrophobic groups, whereas standard PB models are unable to generate positive charging free energies regardless of the parametrized radii. The GPU-accelerated solver is freely available online, as is a MATLAB implementation.

Liquid-solid phase transition of Ge-Sb-Te alloy observed by in-situ transmission electron microscopy

Energy Technology Data Exchange (ETDEWEB)

Berlin, Katja, E-mail: katja.berlin@pdi-berlin.de; Trampert, Achim

2017-07-15

Melting and crystallization dynamics of the multi-component Ge-Sb-Te alloy have been investigated by in-situ transmission electron microscopy (TEM). Starting point of the phase transition study is an ordered hexagonal Ge{sub 1}Sb{sub 2}Te{sub 4} thin film on Si(111) where the crystal structure and the chemical composition are verified by scanning TEM and electron energy-loss spectroscopy, respectively. The in-situ observation of the liquid phase at 600°C including the liquid-solid and liquid-vacuum interfaces and their movements was made possible due to an encapsulation of the TEM sample. The solid-liquid interface during melting displays a broad and diffuse transition zone characterized by a vacancy induced disordered state. Although the velocities of interface movements are measured to be in the nanometer per second scale, both, for crystallization and solidification, the underlying dynamic processes are considerably different. Melting reveals linear dependence on time, whereas crystallization exhibits a non-linear time-dependency featuring a superimposed start-stop motion. Our results may provide valuable insight into the atomic mechanisms at interfaces during the liquid-solid phase transition of Ge-Sb-Te alloys. - Highlights: • In-situ TEM observation of liquid Ge-Sb-Te phase transition due to encapsulation. • During melting: Observation of non-ordered interface transition due to premelting. • During solidification: Observation of non-linear time-dependent crystallization.

Liquid-solid phase transition of Ge-Sb-Te alloy observed by in-situ transmission electron microscopy

International Nuclear Information System (INIS)

Berlin, Katja; Trampert, Achim

2017-01-01

Melting and crystallization dynamics of the multi-component Ge-Sb-Te alloy have been investigated by in-situ transmission electron microscopy (TEM). Starting point of the phase transition study is an ordered hexagonal Ge 1 Sb 2 Te 4 thin film on Si(111) where the crystal structure and the chemical composition are verified by scanning TEM and electron energy-loss spectroscopy, respectively. The in-situ observation of the liquid phase at 600°C including the liquid-solid and liquid-vacuum interfaces and their movements was made possible due to an encapsulation of the TEM sample. The solid-liquid interface during melting displays a broad and diffuse transition zone characterized by a vacancy induced disordered state. Although the velocities of interface movements are measured to be in the nanometer per second scale, both, for crystallization and solidification, the underlying dynamic processes are considerably different. Melting reveals linear dependence on time, whereas crystallization exhibits a non-linear time-dependency featuring a superimposed start-stop motion. Our results may provide valuable insight into the atomic mechanisms at interfaces during the liquid-solid phase transition of Ge-Sb-Te alloys. - Highlights: • In-situ TEM observation of liquid Ge-Sb-Te phase transition due to encapsulation. • During melting: Observation of non-ordered interface transition due to premelting. • During solidification: Observation of non-linear time-dependent crystallization.

Spatially resolved band alignments at Au-hexadecanethiol monolayer-GaAs(001) interfaces by ballistic electron emission microscopy

Energy Technology Data Exchange (ETDEWEB)

Junay, A.; Guézo, S., E-mail: sophie.guezo@univ-rennes1.fr; Turban, P.; Delhaye, G.; Lépine, B.; Tricot, S.; Ababou-Girard, S.; Solal, F. [Département Matériaux-Nanosciences, Institut de Physique de Rennes, UMR 6251, CNRS-Université de Rennes 1, Campus de Beaulieu, Bât 11E, 35042 Rennes Cedex (France)

2015-08-28

We study structural and electronic inhomogeneities in Metal—Organic Molecular monoLayer (OML)—semiconductor interfaces at the sub-nanometer scale by means of in situ Ballistic Electron Emission Microscopy (BEEM). BEEM imaging of Au/1-hexadecanethiols/GaAs(001) heterostructures reveals the evolution of pinholes density as a function of the thickness of the metallic top-contact. Using BEEM in spectroscopic mode in non-short-circuited areas, local electronic fingerprints (barrier height values and corresponding spectral weights) reveal a low-energy tunneling regime through the insulating organic monolayer. At higher energies, BEEM evidences new conduction channels, associated with hot-electron injection in the empty molecular orbitals of the OML. Corresponding band diagrams at buried interfaces can be thus locally described. The energy position of GaAs conduction band minimum in the heterostructure is observed to evolve as a function of the thickness of the deposited metal, and coherently with size-dependent electrostatic effects under the molecular patches. Such BEEM analysis provides a quantitative diagnosis on metallic top-contact formation on organic molecular monolayer and appears as a relevant characterization for its optimization.

Non-linear effects and thermoelectric efficiency of quantum dot-based single-electron transistors.

Science.gov (United States)

Talbo, Vincent; Saint-Martin, Jérôme; Retailleau, Sylvie; Dollfus, Philippe

2017-11-01

By means of advanced numerical simulation, the thermoelectric properties of a Si-quantum dot-based single-electron transistor operating in sequential tunneling regime are investigated in terms of figure of merit, efficiency and power. By taking into account the phonon-induced collisional broadening of energy levels in the quantum dot, both heat and electrical currents are computed in a voltage range beyond the linear response. Using our homemade code consisting in a 3D Poisson-Schrödinger solver and the resolution of the Master equation, the Seebeck coefficient at low bias voltage appears to be material independent and nearly independent on the level broadening, which makes this device promising for metrology applications as a nanoscale standard of Seebeck coefficient. Besides, at higher voltage bias, the non-linear characteristics of the heat current are shown to be related to the multi-level effects. Finally, when considering only the electronic contribution to the thermal conductance, the single-electron transistor operating in generator regime is shown to exhibit very good efficiency at maximum power.

Electron beam cross-linking of natural rubber/linear-low density polyethylene blends

International Nuclear Information System (INIS)

Ahmad, A.; Mohd, D. H.; Abdullah, I.

2005-01-01

Effects of electron beam irradiation on the mechanical properties and morphological structure of natural rubber/linear-low density polyethylene blend was investigated The natural rubber/linear-low density polyethylene blend was prepared by melt blending in a Haake internal mixer at 140 d ig C , rotor speed of 50 rpm, and in 15 min Liquid natural rubber was incorporated into the blend as a compatibilizer Samples in the form of 1 mm sheets were exposed to 50-300 kGy of electron beam irradiation and analyzed for swelling index and gel content, tensile strength, and surface morphology. The result Indicated that gel content and mechanical properties of the samples increased with radiation dosage. The honey-comb structure of the surface morphology in low dosage irradiated samples slowly transformed into a continuous matrix on increasing radiation dose The variation of mechanical and physical properties was due to Increase in cross-linking density in the rubber and plastic phases and rubber-plastic Interaction on irradiation

Electronic structures and stability of Ni/Bi2Te3 and Co/Bi2Te3 interfaces

KAUST Repository

Xiong, Ka; Wang, Weichao; Alshareef, Husam N.; Gupta, Rahul P.; White, John B.; Gnade, Bruce E.; Cho, Kyeongjae

2010-01-01

We investigate the electronic structures and stability for Ni/Bi 2Te3, NiTe/Bi2Te3, Co/Bi 2Te3 and CoTe2/Bi2Te3 interfaces by first-principles calculations. It is found that the surface termination strongly affects the band alignment. Ni and Co are found to form Ohmic contacts to Bi2Te3. The interface formation energy for Co/Bi2Te3 interfaces is much lower than that of Ni/Bi2Te3 interfaces. Furthermore, we found that NiTe on Bi2Te3 is more stable than Ni, while the formation energies for Co and CoTe2 on Bi2Te3 are comparable. © 2010 IOP Publishing Ltd.

Electronic structures and stability of Ni/Bi2Te3 and Co/Bi2Te3 interfaces

KAUST Repository

Xiong, Ka

2010-03-04

We investigate the electronic structures and stability for Ni/Bi 2Te3, NiTe/Bi2Te3, Co/Bi 2Te3 and CoTe2/Bi2Te3 interfaces by first-principles calculations. It is found that the surface termination strongly affects the band alignment. Ni and Co are found to form Ohmic contacts to Bi2Te3. The interface formation energy for Co/Bi2Te3 interfaces is much lower than that of Ni/Bi2Te3 interfaces. Furthermore, we found that NiTe on Bi2Te3 is more stable than Ni, while the formation energies for Co and CoTe2 on Bi2Te3 are comparable. © 2010 IOP Publishing Ltd.

Design of Electronic Medical Record User Interfaces: A Matrix-Based Method for Improving Usability

Directory of Open Access Journals (Sweden)

Kushtrim Kuqi

2013-01-01

Full Text Available This study examines a new approach of using the Design Structure Matrix (DSM modeling technique to improve the design of Electronic Medical Record (EMR user interfaces. The usability of an EMR medication dosage calculator used for placing orders in an academic hospital setting was investigated. The proposed method captures and analyzes the interactions between user interface elements of the EMR system and groups elements based on information exchange, spatial adjacency, and similarity to improve screen density and time-on-task. Medication dose adjustment task time was recorded for the existing and new designs using a cognitive simulation model that predicts user performance. We estimate that the design improvement could reduce time-on-task by saving an average of 21 hours of hospital physicians’ time over the course of a month. The study suggests that the application of DSM can improve the usability of an EMR user interface.

Proposed Physics Experiments for Laser-Driven Electron Linear Acceleration in a Dielectric Loaded Vacuum, Final Report

Energy Technology Data Exchange (ETDEWEB)

Byer, Robert L. [Stanford Univ., CA (United States). Dept. of Applied Physics. Edward L. Ginzton Lab.

2016-07-08

This final report summarizes the last three years of research on the development of advanced linear electron accelerators that utilize dielectric wave-guide vacuum channels pumped by high energy laser fields to accelerate beams of electrons.

Electron beam and optical depth profiling of quasibulk GaN

International Nuclear Information System (INIS)

Chernyak, L.; Osinsky, A.; Nootz, G.; Schulte, A.; Jasinski, J.; Benamara, M.; Liliental-Weber, Z.; Look, D. C.; Molnar, R. J.

2000-01-01

Electron beam and optical depth profiling of thick (5.5--64 μm) quasibulk n-type GaN samples, grown by hydride vapor-phase epitaxy, were carried out using electron beam induced current (EBIC), microphotoluminescence (PL), and transmission electron microscopy (TEM). The minority carrier diffusion length, L, was found to increase linearly from 0.25 μm, at a distance of about 5 μm from the GaN/sapphire interface, to 0.63 μm at the GaN surface, for a 36-μm-thick sample. The increase in L was accompanied by a corresponding increase in PL band-to-band radiative transition intensity as a function of distance from the GaN/sapphire interface. We attribute the latter changes in PL intensity and minority carrier diffusion length to a reduced carrier mobility and lifetime at the interface, due to scattering at threading dislocations. The results of EBIC and PL measurements are in good agreement with the values for dislocation density obtained using TEM

Towards TeV-scale electron-positron collisions: the Compact Linear Collider (CLIC)

Science.gov (United States)

Doebert, Steffen; Sicking, Eva

2018-02-01

The Compact Linear Collider (CLIC), a future electron-positron collider at the energy frontier, has the potential to change our understanding of the universe. Proposed to follow the Large Hardron Collider (LHC) programme at CERN, it is conceived for precision measurements as well as for searches for new phenomena.

Synchrotron-based photoemission study of electronic structure of the Cs/GaN ultrathin interface

Science.gov (United States)

Benemanskaya, G. V.; Kukushkin, S. A.; Dementev, P. A.; Lapushkin, M. N.; Timoshnev, S. N.; Smirnov, D. V.

2018-03-01

Electronic structure of the Cs/n-GaN nano-interface has been studied in situ via synchrotron-based photoelectron spectroscopy by excitation in the energy range of 70-400 eV. The GaN sample was grown by an original method of epitaxy of low-defect unstressed nanoscaled films on AlGaN/SiC/Si substrate. Changes in the surface state spectra and in the Ga 3d, Cs 4d, Cs 5p, N 1s core level spectra have been revealed under different cesium coverages. The intrinsic surface states for the clean GaN surface at binding energies of ∼5.0 eV and ∼7.0 eV are attenuated during Cs adsorption. Simultaneously three Cs induced surface states are found to arise. Drastic changes in the surface state spectrum were ascertained and shown to be originated from the local interacting Ga dangling bonds and adsorbed Cs atoms initiating the electron redistribution effect with formation of the semiconductor-like Cs/n-GaN interface.

Linear time relational prototype based learning.

Science.gov (United States)

Gisbrecht, Andrej; Mokbel, Bassam; Schleif, Frank-Michael; Zhu, Xibin; Hammer, Barbara

2012-10-01

Prototype based learning offers an intuitive interface to inspect large quantities of electronic data in supervised or unsupervised settings. Recently, many techniques have been extended to data described by general dissimilarities rather than Euclidean vectors, so-called relational data settings. Unlike the Euclidean counterparts, the techniques have quadratic time complexity due to the underlying quadratic dissimilarity matrix. Thus, they are infeasible already for medium sized data sets. The contribution of this article is twofold: On the one hand we propose a novel supervised prototype based classification technique for dissimilarity data based on popular learning vector quantization (LVQ), on the other hand we transfer a linear time approximation technique, the Nyström approximation, to this algorithm and an unsupervised counterpart, the relational generative topographic mapping (GTM). This way, linear time and space methods result. We evaluate the techniques on three examples from the biomedical domain.

The drive system of 100 MeV electron linear accelerator

International Nuclear Information System (INIS)

Sun Yuzhen; Su Guoping; Wang Xiulong; Tianlu

1988-06-01

The principle, structure, measurement results and technical performances of microwave drive system for 100MeV electron linear accelerator are presented. In this system the peak power of 15 kW is produced by the S bank middle power klystron. The output power of the klystron is divided into six subdrive lines that drive six high power klystrons respectively. The results show the system with simple structure and good characteristics completely meets the requirements of 100 MeV Linac

Comparing light sensitivity, linearity and step response of electronic cameras for ophthalmology.

Science.gov (United States)

Kopp, O; Markert, S; Tornow, R P

2002-01-01

To develop and test a procedure to measure and compare light sensitivity, linearity and step response of electronic cameras. The pixel value (PV) of digitized images as a function of light intensity (I) was measured. The sensitivity was calculated from the slope of the P(I) function, the linearity was estimated from the correlation coefficient of this function. To measure the step response, a short sequence of images was acquired. During acquisition, a light source was switched on and off using a fast shutter. The resulting PV was calculated for each video field of the sequence. A CCD camera optimized for the near-infrared (IR) spectrum showed the highest sensitivity for both, visible and IR light. There are little differences in linearity. The step response depends on the procedure of integration and read out.

Effect of interfaces on electron transport properties of MoS2-Au Contacts

Science.gov (United States)

Aminpour, Maral; Hapala, Prokop; Le, Duy; Jelinek, Pavel; Rahman, Talat S.; Rahman's Group Collaboration; Nanosurf Lab Collaboration

2014-03-01

Single layer MoS2 is a promising material for future electronic devices such as transistors since it has good transport characteristics with mobility greater than 200 cm-1V-1s-1 and on-off current ratios up to 108. However, before MoS2 can become a mainstream electronic material for the semiconductor industry, the design of low resistive metal-semiconductor junctions as contacts of the electronic devices needs to be addressed and studied systematically. We have examined the effect of Au contacts on the electronic transport properties of single layer MoS2 using density functional theory in combination with the non-equilibrium Green's function method. The Schottky barrier between Au contact and MoS2, transmission spectra, and I-V curves will be reported and discussed as a function of MoS2 and Au interfaces of varying geometry. This work is supported in part by the US Department of Energy under grant DE-FG02-07ER15842.

Coherent radiation from high-current electron beams of linear accelerators and its applications

International Nuclear Information System (INIS)

Okuda, Shuichi; Takanaka, Makoto; Nakamura, Mitsumi; Kato, Ryukou; Takahashi, Toshiharu; Nam, Soon-Kwon; Taniguchi, Ryouichi; Kojima, Takao

2006-01-01

The characteristics of the far-infrared light source using the coherent radiation emitted from a high-energy short electron bunch have been investigated. The coherent radiation has a continuous spectrum in a submillimeter to millimeter wavelength range and the brightness is relatively high. The spectrum of the radiation is determined by the longitudinal form factor of the electron bunch. The operational conditions of a high-current linear accelerator have been optimized using an electron bunch shape monitor. The coherent transition radiation light source has been applied to absorption spectroscopy for liquid water and to an imaging experiment for a leaf of rose

Linear and nonlinear electrostatic modes in a nonuniform magnetized electron plasma

International Nuclear Information System (INIS)

Vranjes, J.; Shukla, P.K.; Kono, M.; Poedts, S.

2001-01-01

Linear and nonlinear low-frequency modes in a magnetized electron plasma are studied, taking into account a proper description of the equilibrium plasma state that is inhomogeneous. Assuming a homogeneous magnetic field and sheared plasma flows, flute-like perturbations are studied in the presence of density and potential gradients. Linear analysis reveals the presence of a streaming instability and depicts conditions for global linear spiral mode. In the nonlinear domain, a tripolar vortex, which is driven and carried by the flow, is found. Also investigated are the consequences of a magnetic shear as well as nonuniformities along the magnetic field lines, which are shown to be responsible for the possible annulment of the magnetic shear effects. Streaming along the lines of the sheared magnetic field is also studied. A variety of nonlinear structures (viz. global multipolar vortices, local vortex chains, and tripolar vortices) is shown to be the consequence of the simultaneous action of the parallel and perpendicular flows

A Dew Point Meter Comprising a Nanoporous Thin Film Alumina Humidity Sensor with a Linearizing Capacitance Measuring Electronics

Directory of Open Access Journals (Sweden)

Dilip Kumar Ghara

2008-02-01

Full Text Available A novel trace moisture analyzer is presented comprising a capacitive nanoporous film of metal oxide sensor and electronics. The change in capacity of the sensor is due to absorption of water vapor by the pores. A simple capacitance measuring electronics is developed which can detect any change in capacitance and correlates to ambient humidity. The circuit can minimize the parasitic earth capacitance. The non linear response of the sensor is linearized with a micro-controller linearizing circuit. The experimental result shows a resolution of -4°C DP and accuracy within 2%.

High resolution electron scattering facility at the Darmstadt Linear Accelerator (DALINAC). Pt. 4

International Nuclear Information System (INIS)

Foh, J.; Frey, R.; Schneider, R.; Schuell, D.; Schwierczinski, A.; Theissen, H.; Titze, O.

1977-11-01

The computer system installed for the electron scattering facility and its usage is described. For on-line control a dedicated system of two tightly coupled computers (PDP 11/20, H116) is used wheras a PDP 11/45 is provided for all other data processing work resulting from the experiments. Special interfaces, graphic terminals, system software and a complete set of application programs have been developed. (orig.) [de

12 MeV, 4.3 kW electron linear accelerator irradiation application

International Nuclear Information System (INIS)

Hang Desheng; Lai Qiji

2000-01-01

Characteristics of an electron linear accelerator, which has 6-12 MeV energy, 4.2 kW average beam power is introduced. Results show that it has advantages on improving the characteristics of semiconductor devices such as diodes, triodes, SCR, preventing garlic from sprout, preservation of food, and so on

Application of NCRP REPORT No.151 for evaluating the radiation level at the ambience of megavoltage medical electron linear accelerator treatment room

International Nuclear Information System (INIS)

Yang Haiyou; Yu Shui

2011-01-01

Objective: The estimation model,on radiation level at the ambience of medical electron linear accelerator treatment rooms, is derived on the basis of NCRP REPORT No.151, which presents the calculation model of shielding design about barrier thicknesses of megavoltage medical electron linear accelerator treatment rooms. Methods: The estimation model comes from NCRP REPORT No.151- S tructural Shielding Design and Evaluation for Megavoltage X-and Gamma-Ray Radiotherapy Facilities , which presents the calculation model of shielding design about megavoltage medical electron linear accelerator treatment rooms, and the dose rate at isocenter replaces the workload, and the occupancy factor and the use factor are forsaken, then the converse deduction is done according to barrier thicknesses of shielding materials. Ultimately, the estimation model, on radiation level at the ambience of medical electron linear accelerator treatment rooms, is derived. Results: It can be regarded as a systematic estimation model for calculating the radiation level at the ambience of medical electron linear accelerator treatment room. Conclusion: The estimation model has certain practical value to evaluate the radiation level at the ambience of medical electron linear accelerator treatment room. (authors)

Interfacing Detectors to Triggers And DAQ Electronics; TOPICAL

International Nuclear Information System (INIS)

Crosetto, Dario B.

1999-01-01

The complete design of the front-end electronics interfacing LHCb detectors, Level-0 trigger and higher levels of trigger with flexible configuration parameters has been made for (a) ASIC implementation, and (b) FPGA implementation. The importance of approaching designs in technology-independent form becomes essential with the actual rapid electronics evolution. Being able to constrain the entire design to a few types of replicated components: (a) the fully programmable 3D-Flow system, and (b) the configurable front-end circuit described in this article, provides even further advantages because only one or two types of components will need to migrate to the newer technologies. To base on today's technology the design of a system such as the LHCb project that is to begin working in 2006 is not cost-effective. The effort required to migrate to a higher-performance will, in that case, be almost equivalent to completely redesigning the architecture from scratch. The proposed technology independent design with the current configurable front-end module described in this article and the scalable 3D-Flow fully programmable system described elsewhere, based on the study of the evolution of electronics during the past few years and the forecasted advances in the years to come, aims to provide a technology-independent design which lends itself to any technology at any time. In this case, technology independence is based mainly on generic-HDL reusable code which allows a very rapid realization of the state-of-the-art circuits in terms of gate density, power dissipation, and clock frequency. The design of four trigger towers presently fits into an OR3T30 FPGA. Preliminary test results (provided in this paper) meet the functional requirements of LHCb and provide sufficient flexibility to introduce future changes. The complete system design is also provided along with the integration of the front-end design in the entire system and the cost and dimension of the electronics

New evidence and impact of electron transport non-linearities based on new perturbative inter-modulation analysis

NARCIS (Netherlands)

van Berkel, M.; Kobayashi, T.; Igami, H.; Vandersteen, Gerd; Hogeweij, G.M.D.; Tanaka, K.; Tamura, N.; Zwart, Hans; Kubo, S.; Ito, S.; Tsuchiya, H.; de Baar, M.R.

2017-01-01

A new methodology to analyze non-linear components in perturbative transport experiments is introduced. The methodology has been experimentally validated in the Large Helical Device for the electron heat transport channel. Electron cyclotron resonance heating with different modulation frequencies by

Subharmonic beam-loading in electron linear accelerators

International Nuclear Information System (INIS)

Gallagher, W.J.

1983-01-01

The intention of operating an electron linear accelerator subharmonically beam loaded for free electron laser application requires justification of the beam-loaded energy gain equation. The mode of operation typically planned is 5 to 10 nanocoulombs single RF cycle pulses at 25 to 50 nanosecond intervals. This inquiry investigates the details of this sort of beam loading and discusses the performance achievable. Several other investigations of single bunch beam loading have been undertaken, notably at SLAC, where it has been found experimentally that the beam-loading varies directly as the bunch charge and independently of its energy; that investigation also included radiation effects of the wake field and losses owing to parasitic effects of higher order modes. In the case of beam loading where there are multiple pulses transiting at the same time, and spaced far enough apart that significant RF power is introduced between pulses, the energy gain may be calculated by dividing the waveguide into a number of segments, each equal in length to the integral of the interpulse time and the local group velocity. Equations which reveal that the net energy gain in the steady state is the sum of the energy gains in these segments, which compute the initial field intensity, and which calculate the energy gain in the subharmonic case on the basis of the equivalent beam current are presented

A study on virtual source position for electron beams from a Mevatron MD linear accelerator

International Nuclear Information System (INIS)

Ravindran, B.P.

1999-01-01

The virtual source position (VSP) for electron beams of energies 5, 7, 9 10, 12 and 14 MeV and for the applicators (cones) available in the department have been measured for a Mevatron MD class linear accelerator. Different methods of obtaining the virtual source position for electron beams have been investigated in the present study. The results obtained have been compared with those of other workers. It is observed that the VSP is very much machine dependent and needs to be measured for each linear accelerator. The effect of shielding on virtual source position for the type of applicators available in the department has also been investigated. (author)

Effect of Single-Electron Interface Trapping in Decanano MOSFETs: A 3D Atomistic Simulation Study

Science.gov (United States)

Asenov, Asen; Balasubramaniam, R.; Brown, A. R.; Davies, J. H.

2000-01-01

We study the effect of trapping/detrapping of a single-electron in interface states in the channel of n-type MOSFETs with decanano dimensions using 3D atomistic simulation techniques. In order to highlight the basic dependencies, the simulations are carried out initially assuming continuous doping charge, and discrete localized charge only for the trapped electron. The dependence of the random telegraph signal (RTS) amplitudes on the device dimensions and on the position of the trapped charge in the channel are studied in detail. Later, in full-scale, atomistic simulations assuming discrete charge for both randomly placed dopants and the trapped electron, we highlight the importance of current percolation and of traps with strategic position where the trapped electron blocks a dominant current path.

Electronic and Mechanical Properties of GrapheneGermanium Interfaces Grown by Chemical Vapor Deposition

Science.gov (United States)

2015-10-27

that graphene acts as a diffusion barrier to ambient contaminants, as similarly prepared bare Ge exposed to ambient conditions possesses a much...in-plane order underneath the graphene (Figure 1b,f). The stabilization of Ge terraces with half-step heights indicates that the graphene modifies the...Electronic and Mechanical Properties of Graphene −Germanium Interfaces Grown by Chemical Vapor Deposition Brian Kiraly,†,‡ Robert M. Jacobberger

Buried interfaces - A systematic study to characterize an adhesive interface at multiple scales

Science.gov (United States)

Haubrich, Jan; Löbbecke, Miriam; Watermeyer, Philipp; Wilde, Fabian; Requena, Guillermo; da Silva, Julio

2018-03-01

A comparative study of a model adhesive interface formed between laser-pretreated Ti15-3-3-3 and the thermoplastic polymer PEEK has been carried out in order to characterize the interfaces' structural details and the infiltration of the surface nano-oxide by the polymer at multiple scales. Destructive approaches such as scanning and transmission electron microscopy of microsections prepared by focused ion beam, and non-destructive imaging approaches including laser scanning and scanning electron microscopy of pretreated surfaces as well as synchrotron computed tomography techniques (micro- and ptychographic tomographies) were employed for resolving the large, μm-sized melt-structures and the fine nano-oxide substructure within the buried interface. Scanning electron microscopy showed that the fine, open-porous nano-oxide homogeneously covers the larger macrostructure features which in turn cover the joint surface. The open-porous nano-oxide forming the interface itself appears to be fully infiltrated and wetted by the polymer. No voids or even channels were detected down to the respective resolution limits of scanning and transmission electron microscopy.

Power Electronics as Efficient Interface of Renewable Energy Sources

DEFF Research Database (Denmark)

Blaabjerg, Frede; Chen, Zhe; Kjær, Søren Bækhøj

2004-01-01

The global electrical energy consumption is steadily rising and consequently there is a demand to increase the power generation capacity. A significant percentage of the required capacity increase can be based on renewable energy sources. Wind turbine technology, as the most cost effective...... renewable energy conversion system, will play an important part in our future energy supply. But other sources like microturbines, photovoltaics and fuel cell systems may also be serious contributor to the power supply. Characteristically, power electronics will be an efficient and important interface...... to the grid and this paper will first briefly discuss three different alternative/ renewable energy sources. Next, various configurations of the wind turbine technology are presented, as this technology seems to be most developed and cost-effective. Finally, the developments and requirements from the grid...

Adhesion properties of Cu(111)/α-quartz (0001) interfaces: A molecular dynamics study

Energy Technology Data Exchange (ETDEWEB)

Yu, Wenshan, E-mail: wenshan@mail.xjtu.edu.cn; Wu, Lianping; Shen, Shengping, E-mail: sshen@mail.xjtu.edu.cn

2017-05-17

The fundamental properties of Cu/SiO{sub 2} interface are worth studying because they impact the quality and performance of silicon-based microelectronics and related devices. Using the charge-optimized many-body (COMB) potential in this study, we present a molecular dynamics simulation study of the structural, adhesive and electronic properties of Cu(111)/α-quartz SiO{sub 2} (0001) interfaces with two different crystalline orientations and various terminations by double-oxygens (OO), single-oxygen(O) and silicon(Si). For the equilibrated interfaces, the largest adhesion energies correspond to the oxygen richest OO-terminated interface in which the oxidation level of Cu is highest due to the largest charge transfer across the interface. In particular, we also investigate the properties of a series of nonequilibrated OO-, O- and Si-terminated interfaces that are created from their equilibrated counterparts by introducing vacancies of different numbers and different types. It is found that the adhesion energies of interfaces mostly decrease upon vacancy introductions only except for Si vacancies added in the Si-terminated interface. For all nonequilibrated interfaces of different terminations, we found a linear correlation between adhesive energy and area average excess charge transfer in Cu.

User interface design of electronic appliances

CERN Document Server

Baumann, Konrad

2002-01-01

Foreword by Brenda Laurel. Part One: Introduction 1. Background, Bruce Thomas 2. Introduction, Konrad Baumann 3. The Interaction Design Process, Georg Rakers Part Two: User Interface Design 4. Creativity Techniques, Irene Mavrommati 5. Design Principals, Irene Mavrommati and Adrian Martel 6. Design of On-Screen Interfaces, Irene Mavrommati Part Three: Input Devices 7. Controls, Konrad Baumann 8. Keyboards, Konrad Baumann 9. Advanced Interaction Techniques, Christopher Baber and Konrad Baumann 10. Speech Control, Christopher Baber and Jan Noyes 11. Wearable Computers, Christopher Baber Part Fou

The role of transition metal interfaces on the electronic transport in lithium–air batteries

DEFF Research Database (Denmark)

Chen, Jingzhe; Hummelshøj, Jens S.; Thygesen, Kristian Sommer

2011-01-01

Low electronic conduction is expected to be a main limiting factor in the performance of reversible lithium–air, Li–O2, batteries. Here, we apply density functional theory and non-equilibrium Green's function calculations to determine the electronic transport through lithium peroxide, Li2O2, formed...... at the cathode during battery discharge. We find the transport to depend on the orientation and lattice matching of the insulator–metal interface in the presence of Au and Pt catalysts. Bulk lithium vacancies are found to be available and mobile under battery charging conditions, and found to pin the Fermi level...

Effect of Li Termination on the Electronic and Hydrogen Storage Properties of Linear Carbon Chains: A TAO-DFT Study

OpenAIRE

Seenithurai, Sonai; Chai, Jeng-Da

2017-01-01

Accurate prediction of the electronic and hydrogen storage properties of linear carbon chains (C n ) and Li-terminated linear carbon chains (Li2C n ), with n carbon atoms (n?=?5?10), has been very challenging for traditional electronic structure methods, due to the presence of strong static correlation effects. To meet the challenge, we study these properties using our newly developed thermally-assisted-occupation density functional theory (TAO-DFT), a very efficient electronic structure meth...

Electronic structure evolution and energy level alignment at C60/4,4'-cyclohexylidenebis[N,N-bis(4-methylphenyl) benzenamine]/MoOx/indium tin oxide interfaces

Science.gov (United States)

Liu, Xiaoliang; Yi, Shijuan; Wang, Chenggong; Wang, Congcong; Gao, Yongli

2014-04-01

The electronic structure evolution and energy level alignment have been investigated at interfaces comprising fullerene (C60)/4,4'-cyclohexylidenebis[N,N-bis(4-methylphenyl) benzenamine] (TAPC)/ molybdenum oxide (MoOx)/ indium tin oxide with ultraviolet photoemission spectroscopy and inverse photoemission spectroscopy. With deposition of TAPC upon MoOx, a dipole of 1.58 eV was formed at the TAPC/MoOx interface due to electron transfer from TAPC to MoOx. The highest occupied molecular orbital (HOMO) onset of TAPC was pinned closed to the Fermi level, leading to a p-doped region and thus increasing the carrier concentration at the very interface. The downward band bending and the resulting built-in field in TAPC were favorable for the hole transfer toward the TAPC/MoOx interface. The rigid downward shift of energy levels of TAPC indicated no significant interface chemistry at the interface. With subsequent deposition of C60 on TAPC, a dipole of 0.27 eV was observed at the C60/TAPC heterojunction due to the electron transfer from TAPC to C60. This led to a drop of the HOMO of TAPC near the C60/TAPC interface, and hence further enhanced the band bending in TAPC. The band bending behavior was also observed in C60, similarly creating a built-in field in C60 film and improving the electron transfer away from the C60/TAPC interface. It can be deduced from the interface analysis that a promising maximum open circuit voltage of 1.5 eV is achievable in C60/TAPC-based organic photovoltaic cells.

Homogenized approach for the non linear dynamic analysis of entire masonry buildings by means of rigid plate elements and damaging interfaces

Science.gov (United States)

Bertolesi, Elisa; Milani, Gabriele

2017-07-01

The present paper is devoted to the analysis of entire 3D masonry structures adopting a Rigid Body and Spring-Mass (HRBSM) model. A series of non linear static and dynamic analyses are conducted with respect to two structures with technical relevance. The elementary cell is discretized by means of three-noded plane stress elements and non-linear interfaces. At a structural level, the non-linear analyses are performed replacing the homogenized orthotropic continuum with a rigid element and non-linear spring assemblage (RBSM) by means of which both in and out of plane mechanisms are allowed. In order to validate the proposed model for the analyses of full scale structures subjected to seismic actions, two different examples are critically discussed, namely a church façade and an in-scale masonry building, both subjected to dynamic excitation. The results obtained are compared with experimental or numerical results available in literature.

Interfacing of DNA with carbon nanotubes for nanodevice applications

International Nuclear Information System (INIS)

Rastogi, Richa; Dhindsa, Navneet; Suri, C. Raman; Pant, B.D.; Tripathi, S.K.; Kaur, Inderpreet; Bharadwaj, Lalit M.

2012-01-01

In nanotechnology, carbon nanotubes are evolving as ‘hot spot’ due to their applications as most sensitive biosensors. Thus, study of effect of biomolecular interaction is prerequisite for their electrical application in biosensors and bioelectronics. Here, we have explored this effect on electrical properties of carbon nanotubes with DNA as a model biomolecule. A stable conjugate of carbon nanotubes with DNA is formed via covalent methodology employing quantum dot as fluoropore and characterized with various spectroscopic, fluoroscopic and microscopic techniques. CNT–DNA adduct showed decreased transconductance (from 614.46 μS to 1.34 μS) and shift of threshold voltage (from −0.85 V to 2.5 V) due to change in Schottky barriers at metal–nanotube contact. In addition, decrease in hole mobility (from 4.46 × 10 6 to 9.72 × 10 3 cm 2 V −1 s −1 ) and increase in ON-linear resistance (from 74 kΩ to 0.44 MΩ) conclude large change in device parameters. On the one hand, this substantial change in device parameters after interfacing with biomolecules supports application of carbon nanotubes in the field of biosensors while on the other hand, the same can limit their use in future power electronic devices where stability in device parameters is essential. -- Graphical abstract: Carbon nanotubes are interfaced with DNA via covalent interactions and characterized with spectroscopic, fluoroscopic and microscopic techniques. Electrical characterization of this stable SWNT–DNA conjugate shows decreased transconductance and shift of threshold voltage towards positive gate voltages. On the one hand, this substantial change in device parameters after interfacing with biomolecules supports application of carbon nanotubes in the field of biosensors while on the other hand, the same can limit their use in future power electronic devices where stability in device parameters is essential. Highlights: ► Effect of biomolecular (DNA) interaction on electrical

Surface and interface effects in VLSI

CERN Document Server

Einspruch, Norman G

1985-01-01

VLSI Electronics Microstructure Science, Volume 10: Surface and Interface Effects in VLSI provides the advances made in the science of semiconductor surface and interface as they relate to electronics. This volume aims to provide a better understanding and control of surface and interface related properties. The book begins with an introductory chapter on the intimate link between interfaces and devices. The book is then divided into two parts. The first part covers the chemical and geometric structures of prototypical VLSI interfaces. Subjects detailed include, the technologically most import

Low energy electron diffraction (LEED) and sum frequency generation (SFG) vibrational spectroscopy studies of solid-vacuum, solid-air and solid-liquid interfaces

Energy Technology Data Exchange (ETDEWEB)

Hoffer, Saskia [Univ. of California, Berkeley, CA (United States)

2002-01-01

Electron based surface probing techniques can provide detailed information about surface structure or chemical composition in vacuum environments. The development of new surface techniques has made possible in situ molecular level studies of solid-gas interfaces and more recently, solid-liquid interfaces. The aim of this dissertation is two-fold. First, by using novel sample preparation, Low Energy Electron Diffraction (LEED) and other traditional ultra high vacuum (UHV) techniques are shown to provide new information on the insulator/vacuum interface. The surface structure of the classic insulator NaCl has been determined using these methods. Second, using sum frequency generation (SFG) surface specific vibrational spectroscopy studies were performed on both the biopolymer/air and electrode/electrolyte interfaces. The surface structure and composition of polyetherurethane-silicone copolymers were determined in air using SFG, atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS). SFG studies of the electrode (platinum, gold and copper)/electrolyte interface were performed as a function of applied potential in an electrochemical cell.

Symposium on electron linear accelerators in honor of Richard B. Neal's 80th birthday: Proceedings

Energy Technology Data Exchange (ETDEWEB)

Siemann, R.H. [ed.

1998-07-01

The papers presented at the conference are: (1) the construction of SLAC and the role of R.B. Neal; (2) symposium speech; (3) lessons learned from the SLC; (4) alternate approaches to future electron-positron linear colliders; (5) the NLC technical program; (6) advanced electron linacs; (7) medical uses of linear accelerators; (8) linac-based, intense, coherent X-ray source using self-amplified spontaneous emission. Selected papers have been indexed separately for inclusion in the Energy Science and Technology Database.

Radiological safety aspects of the operation of electron linear accelerators

International Nuclear Information System (INIS)

Swanson, W.P.

1979-01-01

This manual is intended as a guide for the planning and implementation of radiation protection programmes for all types of electron linear accelerators. Material is provided for guidance in the planning and installation stages, as well as for the implementation of radiation protection for continuing operations. Because of their rapidly growing importance, the problems of installation and radiation safety of standard medical and industrial accelerators are discussed in separate sections. Special discussions are devoted to the radiation protection problems unique to electron accelerators: thick-target bremsstrahlung, the electromagnetic cascade, the estimation of secondary-radiation yields from thick targets, and instrumental corrections for accelerator duty factor. In addition, an extensive review of neutron production is given which includes new calculations of neutron production in various materials. A recalculation of activation in a variety of materials has been done for this manual, and specific gamma-ray constants have been recalculated for a number of nuclides to take into account the contribution of K X-rays. The subjects of air and water activation, as well as toxic gas production in air have been specially reviewed. Betatrons and electron microtrons operating at the same energy produce essentially the same kind of secondary radiation as electron linacs and the material given in this manual is directly applicable to them

A combined experimental and analytical approach for interface fracture parameters of dissimilar materials in electronic packages

International Nuclear Information System (INIS)

Kay, N.R.; Ghosh, S.; Guven, I.; Madenci, E.

2006-01-01

This study concerns the development of a combined experimental and analytical technique to determine the critical values of fracture parameters for interfaces between dissimilar materials in electronic packages. This technique utilizes specimens from post-production electronic packages. The mechanical testing is performed inside a scanning electron microscope while the measurements are achieved by means of digital image correlation. The measured displacements around the crack tip are used as the boundary conditions for the analytical model to compute the energy release rate. The critical energy release rate values obtained from post-production package specimens are obtained to be lower than those laboratory specimens

The front-end (Level-0) electronics interface module for the LHCb RICH detectors

Energy Technology Data Exchange (ETDEWEB)

Adinolfi, M. [Sub-department of Particle Physics, University of Oxford, Denys Wilkinson Building, Keble Road, Oxford, OX1 3RH (United Kingdom); Bibby, J.H. [Sub-department of Particle Physics, University of Oxford, Denys Wilkinson Building, Keble Road, Oxford, OX1 3RH (United Kingdom); Brisbane, S. [Sub-department of Particle Physics, University of Oxford, Denys Wilkinson Building, Keble Road, Oxford, OX1 3RH (United Kingdom); Gibson, V. [Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge CB3 0HE (United Kingdom); Harnew, N. [Sub-department of Particle Physics, University of Oxford, Denys Wilkinson Building, Keble Road, Oxford, OX1 3RH (United Kingdom); Jones, M. [Sub-department of Particle Physics, University of Oxford, Denys Wilkinson Building, Keble Road, Oxford, OX1 3RH (United Kingdom); Libby, J. [Sub-department of Particle Physics, University of Oxford, Denys Wilkinson Building, Keble Road, Oxford, OX1 3RH (United Kingdom)]. E-mail: j.libby1@physics.ox.ac.uk; Powell, A. [Sub-department of Particle Physics, University of Oxford, Denys Wilkinson Building, Keble Road, Oxford, OX1 3RH (United Kingdom); Newby, C. [Sub-department of Particle Physics, University of Oxford, Denys Wilkinson Building, Keble Road, Oxford, OX1 3RH (United Kingdom); Rotolo, N. [Sub-department of Particle Physics, University of Oxford, Denys Wilkinson Building, Keble Road, Oxford, OX1 3RH (United Kingdom); Smale, N. [Sub-department of Particle Physics, University of Oxford, Denys Wilkinson Building, Keble Road, Oxford, OX1 3RH (United Kingdom); Somerville, L.; Sullivan, P.; Topp-Jorgensen, S. [Sub-department of Particle Physics, University of Oxford, Denys Wilkinson Building, Keble Road, Oxford, OX1 3RH (United Kingdom); Wotton, S. [Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge CB3 0HE (United Kingdom); Wyllie, K. [CERN, CH-1211, Geneva 23 (Switzerland)

2007-03-11

The front-end (Level-0) electronics interface module for the LHCb Ring Imaging Cherenkov (RICH) detectors is described. This module integrates the novel hybrid photon detectors (HPDs), which instrument the RICH detectors, to the LHCb trigger, data acquisition (DAQ) and control systems. The system operates at 40 MHz with a first-level trigger rate of 1 MHz. The module design is presented and results are given for both laboratory and beam tests.

A Prototype User Interface for a Mobile Electronic Clinical Note Data Entry System

OpenAIRE

Zafar, Atif; Lehto, Mark; Kim, Jongseo

2005-01-01

Recent advances in mobile computing technologies have made electronic medical records (EMRs) on handheld devices an attractive possibility. However, data entry paradigms popular on desktop machines do not translate well to mobile devices1,2. Based on a review of the literature on mobile device usability1–4, we built a prototype user interface for mobile EMRs and held focus groups with clinician users whose feedback provided useful insight about design choices, functionality and...

The front-end (Level-0) electronics interface module for the LHCb RICH detectors

International Nuclear Information System (INIS)

Adinolfi, M.; Bibby, J.H.; Brisbane, S.; Gibson, V.; Harnew, N.; Jones, M.; Libby, J.; Powell, A.; Newby, C.; Rotolo, N.; Smale, N.; Somerville, L.; Sullivan, P.; Topp-Jorgensen, S.; Wotton, S.; Wyllie, K.

2007-01-01

The front-end (Level-0) electronics interface module for the LHCb Ring Imaging Cherenkov (RICH) detectors is described. This module integrates the novel hybrid photon detectors (HPDs), which instrument the RICH detectors, to the LHCb trigger, data acquisition (DAQ) and control systems. The system operates at 40 MHz with a first-level trigger rate of 1 MHz. The module design is presented and results are given for both laboratory and beam tests

Direct determination of energy level alignment and charge transport at metal-Alq3 interfaces via ballistic-electron-emission spectroscopy.

Science.gov (United States)

Jiang, J S; Pearson, J E; Bader, S D

2011-04-15

Using ballistic-electron-emission spectroscopy (BEES), we directly determined the energy barrier for electron injection at clean interfaces of Alq(3) with Al and Fe to be 2.1 and 2.2 eV, respectively. We quantitatively modeled the sub-barrier BEES spectra with an accumulated space charge layer, and found that the transport of nonballistic electrons is consistent with random hopping over the injection barrier.

Fully Atomistic Understanding of the Electronic and Optical Properties of a Prototypical Doped Charge-Transfer Interface

DEFF Research Database (Denmark)

Brivio, Gian Paolo; Baby, Anu; Gruenewald, Marco

2017-01-01

The current study generates profound atomistic insights into doping-induced changes of the optical and electronic properties of the prototypical PTCDA/Ag(111) interface. For doping K atoms are used, as KxPTCDA/Ag(111) has the distinct advantage of forming well-defined stoichiometric phases...

Temporal characterization of ultrashort linearly chirped electron bunches generated from a laser wakefield accelerator

Directory of Open Access Journals (Sweden)

C. J. Zhang

2016-06-01

Full Text Available A new method for diagnosing the temporal characteristics of ultrashort electron bunches with linear energy chirp generated from a laser wakefield accelerator is described. When the ionization-injected bunch interacts with the back of the drive laser, it is deflected and stretched along the direction of the electric field of the laser. Upon exiting the plasma, if the bunch goes through a narrow slit in front of the dipole magnet that disperses the electrons in the plane of the laser polarization, it can form a series of bunchlets that have different energies but are separated by half a laser wavelength. Since only the electrons that are undeflected by the laser go through the slit, the energy spectrum of the bunch is modulated. By analyzing the modulated energy spectrum, the shots where the bunch has a linear energy chirp can be recognized. Consequently, the energy chirp and beam current profile of those bunches can be reconstructed. This method is demonstrated through particle-in-cell simulations and experiment.

Non-linear dielectric monitoring of biological suspensions

International Nuclear Information System (INIS)

Treo, E F; Felice, C J

2007-01-01

Non-linear dielectric spectroscopy as a tool for in situ monitoring of enzyme assumes a non-linear behavior of the sample when a sinusoidal voltage is applied to it. Even many attempts have been made to improve the original experiments, all of them had limited success. In this paper we present upgrades made to a non-linear dielectric spectrometer developed and the results obtained when using different cells. We emphasized on the electrode surface, characterizing the grinding and polishing procedure. We found that the biological medium does not behave as expected, and the non-linear response is generated in the electrode-electrolyte interface. The electrochemistry of this interface can bias unpredictably the measured non-linear response

Chemistry of green encapsulating molding compounds at interfaces with other materials in electronic devices

Energy Technology Data Exchange (ETDEWEB)

Scandurra, A.; Zafarana, R.; Tenya, Y.; Pignataro, S

2004-07-31

The interface chemistry between encapsulating epoxy phenolic molding compound (EMC) containing phosphorous based organic flame retardant (the so called 'green materials') and copper oxide-hydroxide and aluminum oxide-hydroxide surfaces have been studied in comparison with 'conventional' EMC containing bromine and antimony as flame retardant. These green materials are designed to reduce the presence of toxic elements in the electronic packages and, consequently, in the environment. For the study were used a Scanning Acoustic Microscopy for delamination measurements, a dynamometer for the pull strength measurements and an ESCA spectrometer for chemical analysis of the interface. The general behavior of the green compound in terms of delamination, adhesion, and corrosion is found better or at least comparable than that of the conventional EMC.

Atomic and electronic structure of doped Si (111 ) (2 √{3 }×2 √{3 }) R 30∘ -Sn interfaces

Science.gov (United States)

Yi, Seho; Ming, Fangfei; Huang, Ying-Tzu; Smith, Tyler S.; Peng, Xiyou; Tu, Weisong; Mulugeta, Daniel; Diehl, Renee D.; Snijders, Paul C.; Cho, Jun-Hyung; Weitering, Hanno H.

2018-05-01

The hole-doped Si (111 ) (2 √ 3 ×2 √ 3 ) R 30∘ -Sn interface exhibits a symmetry-breaking insulator-insulator transition below 100 K that appears to be triggered by electron tunneling into the empty surface-state bands. No such transition is seen in electron-doped systems. To elucidate the nature and driving force of this phenomenon, the structure of the interface must be resolved. Here we report on an extensive experimental and theoretical study, including scanning tunneling microscopy and spectroscopy (STM/STS), dynamical low-energy electron diffraction (LEED) analysis, and density functional theory (DFT) calculations, to elucidate the structure of this interface. We consider six different structure models, three of which have been proposed before, and conclude that only two of them can account for the majority of experimental data. One of them is the model according to Törnevik et al. [C. Törnevik et al., Phys. Rev. B 44, 13144 (1991), 10.1103/PhysRevB.44.13144] with a total Sn coverage of 14/12 monolayers (ML). The other is the "revised trimer model" with a total Sn coverage of 13/12 ML, introduced in this work. These two models are very difficult to discriminate on the basis of DFT or LEED alone, but STS data clearly point toward the Törnevik model as the most viable candidate among the models considered here. The STS data also provide additional insights regarding the electron-injection-driven phase transformation. Similar processes may occur at other metal/semiconductor interfaces, provided they are nonmetallic and can be doped. This could open up a new pathway toward the creation of novel surface phases with potentially very interesting and desirable electronic properties.

Anomalous property of coherent bremsstrahlung linear polarization of relativistic electrons in a crystal

International Nuclear Information System (INIS)

Lapko, V.P.; Nasonov, N.N.; Truten', V.I.

1993-01-01

Polarization and spectral-and-angular properties of γ-radiation of the relativistic electron flux moving in a crystal under uncorrelated collisions with crystal atomic chains, are studied theoretically. Direction of linear polarization of radiation is shown to vary with energy of emitted photon. Reasons of occurrence of this effect are discussed. The results of numerical calculations demonstrating the possibility to form an intensive source of polarized γ-quanta on the basis of coherent radiation of relativistic electrons during low-angular scattering at crystal atom chains, are given

A theoretical study of structural and electronic properties of pentacene/Al(100) interface.

Science.gov (United States)

Saranya, G; Nair, Shiny; Natarajan, V; Kolandaivel, P; Senthilkumar, K

2012-09-01

The first principle calculations within the framework of density functional theory have been performed for the pentacene molecule deposited on the aluminum Al(100) substrate to study the structural and electronic properties of the pentacene/Al(100) interface. The most stable configuration was found at bridge site with 45° rotation of the pentacene molecule on Al(100) surface with a vertical distance of 3.4 Å within LDA and 3.8 Å within GGA functionals. The calculated adsorption energy reveals that the adsorption of pentacene molecule on Al(100) surface is physisorption. For the stable adsorption geometry the electronic properties such as density of states (DOS), partial density of states (PDOS), Mulliken population analysis and Schottky barrier height are studied. The analysis of atomic charge, DOS and PDOS show that the charge is transferred from the Al(100) surface to pentacene molecule, and the transferred charge is about -0.05 electrons. For the adsorbed system, the calculated Schottky barrier height for hole and electron transport is 0.27 and 1.55 eV, respectively. Copyright © 2012 Elsevier Inc. All rights reserved.

Room temperature formation of high-mobility two-dimensional electron gases at crystalline complex oxide interfaces

DEFF Research Database (Denmark)

Chen, Yunzhong; Bovet, N.; Kasama, Takeshi

2014-01-01

Well-controlled sub-unit-cell layer-bylayer epitaxial growth of spinel alumina is achieved at room temperature on a TiO2-terminated SrTiO3 single-crystalline substrate. By tailoring the interface redox reaction, 2D electron gases with mobilities exceeding 3000 cm 2 V−1 s−1 are achieved at this no...

High charge carrier density at the NaTaO3/SrTiO3 hetero-interface

KAUST Repository

Nazir, Safdar

2011-08-05

The formation of a (quasi) two-dimensional electron gas between the band insulators NaTaO3 and SrTiO3 is studied by means of the full-potential linearized augmented plane-wave method of density functional theory. Optimization of the atomic positions points to only small changes in the chemical bonding at the interface. Both the p-type (NaO)−/(TiO2)0 and n-type (TaO2)+/(SrO)0 interfaces are found to be metallic with high charge carrier densities. The effects of O vacancies are discussed. Spin-polarized calculations point to the formation of isolated O 2pmagnetic moments, located in the metallic region of the p-type interface.

Application of the method of continued fractions for electron scattering by linear molecules

International Nuclear Information System (INIS)

Lee, M.-T.; Iga, I.; Fujimoto, M.M.; Lara, O.; Brasilia Univ., DF

1995-01-01

The method of continued fractions (MCF) of Horacek and Sasakawa is adapted for the first time to study low-energy electron scattering by linear molecules. Particularly, we have calculated the reactance K-matrices for an electron scattered by hydrogen molecule and hydrogen molecular ion as well as by a polar LiH molecule in the static-exchange level. For all the applications studied herein. the calculated physical quantities converge rapidly, even for a strongly polar molecule such as LiH, to the correct values and in most cases the convergence is monotonic. Our study suggests that the MCF could be an efficient method for studying electron-molecule scattering and also photoionization of molecules. (Author)

Electronic response and longitudinal phonons of a charge-density-wave distorted linear chain

International Nuclear Information System (INIS)

Giuliani, G.

1978-01-01

The longitudinal-phonon spectrum of an incommensurate charge-density-wave distorted linear chain at T = 0 K are calculated. This is done by direct numerical evaluation of the full static-electronic-response matrix. The electronic band structure assumed for this purpose is that of a mean-field theory 1-D Peierls insulator. The present results show how, within this simplified, but self-consistent picture, the phase and amplitude modes connect to, and interact with, the ordinary longitudinal-phonon branch. Effects due to our inclusion of (0,2ksub(F)) scattering along with the usual (-2ksub(F), 2ksub(F)) are also pointed out. An alternative approximate expression for the 1-D electronic-response matrix is also given. (author)

Multi-interface roughness effects on electron mobility in a Ga0.5In0.5P/GaAs multisubband coupled quantum well structure

International Nuclear Information System (INIS)

Sahu, Trinath; Shore, K Alan

2009-01-01

We analyse the effect of interface roughness scattering on low temperature electron mobility μ n mediated by intersubband interactions in a multisubband coupled Ga 0.5 In 0.5 P/GaAs quantum well structure. We consider a barrier δ-doped double quantum well system in which the subband electron mobility is limited by the interface roughness scattering μ IR n and ionized impurity scattering μ imp n . We analyse the effect of the intersubband interaction and coupling of subband wavefunctions through the barrier on the intrasubband and intersubband transport scattering rates. We show that the intersubband interaction controls the roughness potential of different interfaces through the dielectric screening matrix. In the case of lowest subband occupancy, the mobility is mainly governed by the interface roughness of the central barrier. Whereas when two subbands are occupied, the interface roughness of the outer barrier predominates due to intersubband effects. The influence of the intersubband interaction also exhibits interesting results on the well width up to which the interface roughness dominates in a double quantum well structure

Nanoscale patterning of electronic devices at the amorphous LaAlO3/SrTiO3 oxide interface using an electron sensitive polymer mask

DEFF Research Database (Denmark)

Bjorlig, Anders V.; von Soosten, Merlin; Erlandsen, Ricci

2018-01-01

A simple approach is presented for designing complex oxide mesoscopic electronic devices based on the conducting interfaces of room temperature grown LaAlO3/SrTiO3 heterostructures. The technique is based entirely on methods known from conventional semiconductor processing technology, and we demo...

Hydrodynamic theory for quantum plasmonics: Linear-response dynamics of the inhomogeneous electron gas

DEFF Research Database (Denmark)

Yan, Wei

2015-01-01

We investigate the hydrodynamic theory of metals, offering systematic studies of the linear-response dynamics for an inhomogeneous electron gas. We include the quantum functional terms of the Thomas-Fermi kinetic energy, the von Weizsa¨cker kinetic energy, and the exchange-correlation Coulomb...... energies under the local density approximation. The advantages, limitations, and possible improvements of the hydrodynamic theory are transparently demonstrated. The roles of various parameters in the theory are identified. We anticipate that the hydrodynamic theory can be applied to investigate the linear...... response of complex metallic nanostructures, including quantum effects, by adjusting theory parameters appropriately....

Semiconductor interfaces of polycrystalline CdTe thin-film solar cells. Characterization and modification of electronic properties

International Nuclear Information System (INIS)

Fritsche, J.

2003-01-01

In this thesis for the first time the electronic properties of the semiconductor interfaces in polycrystalline CdTe thin-film solar cells, as well as the morphological and electronic properties of the single semiconductor surfaces were systematically characterized by surface-sensitive measuring methods. The morphological surface properties were analyzed by scanning force microscopy. As substrate materials with SnO 2 /ITO covered glass was applied, where the CdS and CdTe layers were deposited. Furthermore the electronic and morphological material properties of differently treated SnO 2 surfaces were characterized. Beside the studies with scanning force microscopy sputtering depth profiles and X-ray photoelectron spectroscopy were measured

Strontium ruthenate–anatase titanium dioxide heterojunctions from first-principles: Electronic structure, spin, and interface dipoles

Energy Technology Data Exchange (ETDEWEB)

Ferdous, Naheed; Ertekin, Elif, E-mail: ertekin@illinois.edu [Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, 1206 W Green Street, Urbana, Illinois 61801 (United States)

2016-07-21

The epitaxial integration of functional oxides with wide band gap semiconductors offers the possibility of new material systems for electronics and energy conversion applications. We use first principles to consider an epitaxial interface between the correlated metal oxide SrRuO{sub 3} and the wide band gap semiconductor TiO{sub 2}, and assess energy level alignment, interfacial chemistry, and interfacial dipole formation. Due to the ferromagnetic, half-metallic character of SrRuO{sub 3}, according to which only one spin is present at the Fermi level, we demonstrate the existence of a spin dependent band alignment across the interface. For two different terminations of SrRuO{sub 3}, the interface is found to be rectifying with a Schottky barrier of ≈1.3–1.6 eV, in good agreement with experiment. In the minority spin, SrRuO{sub 3} exhibits a Schottky barrier alignment with TiO{sub 2} and our calculated Schottky barrier height is in excellent agreement with previous experimental measurements. For majority spin carriers, we find that SrRuO{sub 3} recovers its exchange splitting gap and bulk-like properties within a few monolayers of the interface. These results demonstrate a possible approach to achieve spin-dependent transport across a heteroepitaxial interface between a functional oxide material and a conventional wide band gap semiconductor.

Study of the electronic structure at the interface between fluorene-1-carboxylic acid molecules and Cu(110)

International Nuclear Information System (INIS)

Song Fei; Mao Hongying; Guan Dandan; Dou Weidong; Zhang Hanjie; Li Haiyang; He Pimo; Bao Shining; Hofmann, Philip

2009-01-01

The interface electronic properties of fluorene-1-carboxylic acid (FC-1) adsorbed on Cu(110) have been studied by ultraviolet photoemission spectroscopy (UPS) and first-principles calculations. Both the molecular orbitals and the Cu valence band are significantly modified upon adsorption. FC-1 is chemically bonded to Cu(110) through charge donation and back donation involving the lowest unoccupied molecular orbital (LUMO) and the highest occupied molecular orbital (HOMO) of the molecule. An observed reduction of the work function can be attributed to the adsorption induced charge redistribution, and the positive interface dipole.

Adaptation of the Camera Link Interface for Flight-Instrument Applications

Science.gov (United States)

Randall, David P.; Mahoney, John C.

2010-01-01

COTS (commercial-off-the-shelf) hard ware using an industry-standard Camera Link interface is proposed to accomplish the task of designing, building, assembling, and testing electronics for an airborne spectrometer that would be low-cost, but sustain the required data speed and volume. The focal plane electronics were designed to support that hardware standard. Analysis was done to determine how these COTS electronics could be interfaced with space-qualified camera electronics. Interfaces available for spaceflight application do not support the industry standard Camera Link interface, but with careful design, COTS EGSE (electronics ground support equipment), including camera interfaces and camera simulators, can still be used.

High-T{sub c} superconductivity in monolayer FeSe on SrTiO{sub 3} via interface-induced small-q electron-phonon coupling

Energy Technology Data Exchange (ETDEWEB)

Aperis, Alexandros; Oppeneer, Peter M. [Uppsala University (Sweden)

2016-07-01

A monolayer of FeSe deposited on SrTiO{sub 3} becomes superconducting at temperatures that exceed T{sub c}=100 K, as compared to a bulk T{sub c} of 8 K. Recent ARPES measurements have provided strong evidence that an interfaced-induced electron-phonon interaction between FeSe electrons and SrTiO{sub 3} phonons plays a decisive role in this phenomenon. However, the mechanism that drives this tantalizing high-T{sub c} boost is still unclear. Here, we examine the recent experimental findings using fully anisotropic, full bandwidth multiband Eliashberg calculations focusing on the superconducting state of FeSe/STO. We use a realistic ten band tight-binding band structure for the electrons of monolayer FeSe and study how the suggested interface-induced small-q electron-phonon interaction mediates superconductivity. Our calculations produce a high-T{sub c} s-wave superconducting state with the experimentally resolved momentum dependence. Further, we calculate the normal metal/insulator/superconductor tunneling spectrum and identify fingerprints of the interface-induced phonon mechanism.

Strings and superstrings. Electron linear colliders

International Nuclear Information System (INIS)

Alessandrini, V.; Bambade, P.; Binetruy, P.; Kounnas, C.; Le Duff, J.; Schwimmer, A.

1989-01-01

Basic string theory; strings in interaction; construction of strings and superstrings in arbitrary space-time dimensions; compactification and phenomenology; linear e+e- colliders; and the Stanford linear collider were discussed [fr

Ballistic electron emissions microscopy (BEEM) of ferromagnet-semiconductor interfaces; Ballistische Elektronen Emissions Mikroskopie (BEEM) an Ferromagnet-Halbleitergrenzflaechen

Energy Technology Data Exchange (ETDEWEB)

Obernhuber, S.

2007-04-15

For current research on spin-transistors it is important to know the characteristics of ferromagnet semiconductor interfaces. The ballistic electron emission microscopy (BEEM) is a method to investigate such a buried interface with nanometer resolution. In this work several ferromagnet/GaAs(110) interfaces have been analysed concerning their homogeneity and mean local Schottky-barrier heights (SBH) have been determined. In Addition, the resulting integral SBH was calculated from the distribution of the local SBHs and compared with the SBH determined from voltage/current characteristics. The areas with a low SBH dominate the current conduction across the interface. Additional BEEM measurements on (AlGaAs/GaAs) heterostructures have been performed. This heterostructures consist of 50 nm AlGaAs/GaAs layers. The results of the BEEM measurements indicate, that the GaAs QWs are defined by AlGaAs barriers. The transition from AlGaAs to GaAs is done within 10 nm. (orig.)

X-band rf driven free electron laser driver with optics linearization

Directory of Open Access Journals (Sweden)

Yipeng Sun (孙一鹏

2014-11-01

Full Text Available In this paper, a compact hard X-ray free electron lasers (FEL design is proposed with all X-band rf acceleration and two stage bunch compression. It eliminates the need of a harmonic rf linearization section by employing optics linearization in its first stage bunch compression. Quadrupoles and sextupoles are employed in a bunch compressor one (BC1 design, in such a way that second order longitudinal dispersion of BC1 cancels the second order energy correlation in the electron beam. Start-to-end 6-D simulations are performed with all the collective effects included. Emittance growth in the horizontal plane due to coherent synchrotron radiation is investigated and minimized, to be on a similar level with the successfully operating Linac coherent light source (LCLS. At a FEL radiation wavelength of 0.15 nm, a saturation length of 40 meters can be achieved by employing an undulator with a period of 1.5 cm. Without tapering, a FEL radiation power above 10 GW is achieved with a photon pulse length of 50 fs, which is LCLS-like performance. The overall length of the accelerator plus undulator is around 250 meters which is much shorter than the LCLS length of 1230 meters. That makes it possible to build hard X-ray FEL in a laboratory with limited size.

Comparative methods to assess harmonic response of nonlinear piezoelectric energy harvesters interfaced with AC and DC circuits

Science.gov (United States)

Lan, Chunbo; Tang, Lihua; Harne, Ryan L.

2018-05-01

Nonlinear piezoelectric energy harvester (PEH) has been widely investigated during the past few years. Among the majority of these researches, a pure resistive load is used to evaluate power output. To power conventional electronics in practical application, the alternating current (AC) generated by nonlinear PEH needs to be transformed into a direct current (DC) and rectifying circuits are required to interface the device and electronic load. This paper aims at exploring the critical influences of AC and DC interface circuits on nonlinear PEH. As a representative nonlinear PEH, we fabricate and evaluate a monostable PEH in terms of generated power and useful operating bandwidth when it is connected to AC and DC interface circuits. Firstly, the harmonic balance analysis and equivalent circuit representation method are utilized to tackle the modeling of nonlinear energy harvesters connected to AC and DC interface circuits. The performances of the monostable PEH connected to these interface circuits are then analyzed and compared, focusing on the influences of the varying load, excitation and electromechanical coupling strength on the nonlinear dynamics, bandwidth and harvested power. Subsequently, the behaviors of the monostable PEH with AC and DC interface circuits are verified by experiment. Results indicate that both AC and DC interface circuits have a peculiar influence on the power peak shifting and operational bandwidth of the monostable PEH, which is quite different from that on the linear PEH.

High resolution electron microscopy studies of interfaces between Al2O3 substrates and MBE grown Nb films

International Nuclear Information System (INIS)

Mayer, J.; Ruhle, M.; Dura, J.; Flynn, C.P.

1991-01-01

This paper reports on single crystal niobium films grown by Molecular Beam Epitaxy (MBE) on (001) S sapphire substrates. Cross-sectional specimens with thickness of 2 O 3 interface could be investigated by high resolution electron microscopy (HREM). The orientation relationship between the metal film and the ceramic substrate was verified by selected area diffraction: (111) Nb parallel (0001) S and [1 bar 10] Nb parallel [2 bar 1 bar 10] S . The atomistic structure of the interface was identified by HREM

Chemical characterization of extra layers at the interfaces in MOCVD InGaP/GaAs junctions by electron beam methods

Directory of Open Access Journals (Sweden)

Shakhmin Alexey

2011-01-01

Full Text Available Abstract Electron beam methods, such as cathodoluminescence (CL that is based on an electron-probe microanalyser, and (200 dark field and high angle annular dark field (HAADF in a scanning transmission electron microscope, are used to study the deterioration of interfaces in InGaP/GaAs system with the GaAs QW on top of InGaP. A CL emission peak different from that of the QW was detected. By using HAADF, it is found that the GaAs QW does not exist any longer, being replaced by extra interlayer(s that are different from GaAs and InGaP because of atomic rearrangements at the interface. The nature and composition of the interlayer(s are determined by HAADF. Such changes of the nominal GaAs QW can account for the emission observed by CL.

Intraoperative radiation therapy using mobile electron linear accelerators: Report of AAPM Radiation Therapy Committee Task Group No. 72

International Nuclear Information System (INIS)

Sam Beddar, A.; Biggs, Peter J.; Chang Sha; Ezzell, Gary A.; Faddegon, Bruce A.; Hensley, Frank W.; Mills, Michael D.

2006-01-01

Intraoperative radiation therapy (IORT) has been customarily performed either in a shielded operating suite located in the operating room (OR) or in a shielded treatment room located within the Department of Radiation Oncology. In both cases, this cancer treatment modality uses stationary linear accelerators. With the development of new technology, mobile linear accelerators have recently become available for IORT. Mobility offers flexibility in treatment location and is leading to a renewed interest in IORT. These mobile accelerator units, which can be transported any day of use to almost any location within a hospital setting, are assembled in a nondedicated environment and used to deliver IORT. Numerous aspects of the design of these new units differ from that of conventional linear accelerators. The scope of this Task Group (TG-72) will focus on items that particularly apply to mobile IORT electron systems. More specifically, the charges to this Task Group are to (i) identify the key differences between stationary and mobile electron linear accelerators used for IORT (ii) describe and recommend the implementation of an IORT program within the OR environment, (iii) present and discuss radiation protection issues and consequences of working within a nondedicated radiotherapy environment, (iv) describe and recommend the acceptance and machine commissioning of items that are specific to mobile electron linear accelerators, and (v) design and recommend an efficient quality assurance program for mobile systems

Molecular orientation and electronic structure at organic heterojunction interfaces

Energy Technology Data Exchange (ETDEWEB)

Zhong, Shu [Department of Chemistry, National University of Singapore, 3 Science Drive 3, 117543 Singapore (Singapore); Zhong, Jian Qiang; Wee, Andrew T.S. [Department of Physics, National University of Singapore, 2 Science Drive 3, 117542 Singapore (Singapore); Chen, Wei, E-mail: phycw@nus.edu.sg [Department of Chemistry, National University of Singapore, 3 Science Drive 3, 117543 Singapore (Singapore); Department of Physics, National University of Singapore, 2 Science Drive 3, 117542 Singapore (Singapore); National University of Singapore (Suzhou) Research Institute, Suzhou (China)

2015-10-01

Highlights: • Molecular orientation at the organic heterojunction interfaces. • Energy level alignments at the organic heterojunction interfaces. • Gap-states mediated interfacial energy level alignment. - Abstract: Due to the highly anisotropic nature of π-conjugated molecules, the molecular orientation in organic thin films can significantly affect light absorption, charge transport, energy level alignment (ELA) and hence device performance. Synchrotron-based near-edge X-ray absorption fine structure (NEXAFS) spectroscopy represents a powerful technique for probing molecular orientation. The aim of this review paper is to provide a balanced assessment on the investigation of molecular orientation at the organic–organic heterojunction (OOH) interface by NEXAFS, as well as the gap-states mediated orientation dependent energy level alignment at OOH interfaces. We highlight recent progress in elucidating molecular orientation at OOH interfaces dominated by various interfacial interactions, gap-states controlled orientation dependent energy level alignments at OOH interfaces, and the manipulations of molecular orientation and ELA in OOH.

Driver electronics design and control for a total artificial heart linear motor.

Science.gov (United States)

Unthan, Kristin; Cuenca-Navalon, Elena; Pelletier, Benedikt; Finocchiaro, Thomas; Steinseifer, Ulrich

2018-01-27

For any implantable device size and efficiency are critical properties. Thus, a linear motor for a Total Artificial Heart was optimized with focus on driver electronics and control strategies. Hardware requirements were defined from power supply and motor setup. Four full bridges were chosen for the power electronics. Shunt resistors were set up for current measurement. Unipolar and bipolar switching for power electronics control were compared regarding current ripple and power losses. Here, unipolar switching showed smaller current ripple and required less power to create the necessary motor forces. Based on calculations for minimal power losses Lorentz force was distributed to the actor's four coils. The distribution was determined as ratio of effective magnetic flux through each coil, which was captured by a force test rig. Static and dynamic measurements under physiological conditions analyzed interaction of control and hardware and all efficiencies were over 89%. In conclusion, the designed electronics, optimized control strategy and applied current distribution create the required motor force and perform optimal under physiological conditions. The developed driver electronics and control offer optimized size and efficiency for any implantable or portable device with multiple independent motor coils. Graphical Abstract ᅟ.

Interfacing Sensors To Micro Controllers

KAUST Repository

Norain, Mohamed

2018-01-01

This lecture will cover the most common interface and interface techniques between sensors and microcontrollers. The presentation will introduce the pros and cons of each interface type including analogue, digital and serial output sensors. It will also cover the basic required electronics knowledge to help you in selecting and designing your next sensor to microcontroller interface.

Interfacing Sensors To Micro Controllers

KAUST Repository

Norain, Mohamed

2018-01-15

This lecture will cover the most common interface and interface techniques between sensors and microcontrollers. The presentation will introduce the pros and cons of each interface type including analogue, digital and serial output sensors. It will also cover the basic required electronics knowledge to help you in selecting and designing your next sensor to microcontroller interface.

Method for pulse to pulse dose reproducibility applied to electron linear accelerators

International Nuclear Information System (INIS)

Ighigeanu, D.; Martin, D.; Oproiu, C.; Cirstea, E.; Craciun, G.

2002-01-01

An original method for obtaining programmed beam single shots and pulse trains with programmed pulse number, pulse repetition frequency, pulse duration and pulse dose is presented. It is particularly useful for automatic control of absorbed dose rate level, irradiation process control as well as in pulse radiolysis studies, single pulse dose measurement or for research experiments where pulse-to-pulse dose reproducibility is required. This method is applied to the electron linear accelerators, ALIN-10 of 6.23 MeV and 82 W and ALID-7, of 5.5 MeV and 670 W, built in NILPRP. In order to implement this method, the accelerator triggering system (ATS) consists of two branches: the gun branch and the magnetron branch. ATS, which synchronizes all the system units, delivers trigger pulses at a programmed repetition rate (up to 250 pulses/s) to the gun (80 kV, 10 A and 4 ms) and magnetron (45 kV, 100 A, and 4 ms).The accelerated electron beam existence is determined by the electron gun and magnetron pulses overlapping. The method consists in controlling the overlapping of pulses in order to deliver the beam in the desired sequence. This control is implemented by a discrete pulse position modulation of gun and/or magnetron pulses. The instabilities of the gun and magnetron transient regimes are avoided by operating the accelerator with no accelerated beam for a certain time. At the operator 'beam start' command, the ATS controls electron gun and magnetron pulses overlapping and the linac beam is generated. The pulse-to-pulse absorbed dose variation is thus considerably reduced. Programmed absorbed dose, irradiation time, beam pulse number or other external events may interrupt the coincidence between the gun and magnetron pulses. Slow absorbed dose variation is compensated by the control of the pulse duration and repetition frequency. Two methods are reported in the electron linear accelerators' development for obtaining the pulse to pulse dose reproducibility: the method

Development of an interface for an ultrareliable fault-tolerant control system and an electronic servo-control unit

Science.gov (United States)

Shaver, Charles; Williamson, Michael

1986-01-01

The NASA Ames Research Center sponsors a research program for the investigation of Intelligent Flight Control Actuation systems. The use of artificial intelligence techniques in conjunction with algorithmic techniques for autonomous, decentralized fault management of flight-control actuation systems is explored under this program. The design, development, and operation of the interface for laboratory investigation of this program is documented. The interface, architecturally based on the Intel 8751 microcontroller, is an interrupt-driven system designed to receive a digital message from an ultrareliable fault-tolerant control system (UFTCS). The interface links the UFTCS to an electronic servo-control unit, which controls a set of hydraulic actuators. It was necessary to build a UFTCS emulator (also based on the Intel 8751) to provide signal sources for testing the equipment.

Band offsets and electronic structures of interface between In{sub 0.5}Ga{sub 0.5}As and InP

Energy Technology Data Exchange (ETDEWEB)

Cai, Genwang [School of Physical Science and Engineering and Key Laboratory of Materials Physics of Ministry of Education of China, Zhengzhou University, Zhengzhou 450052 (China); College of Science, Henan University of Technology, Zhengzhou 450001 (China); Wang, Changhong; Wang, Weichao [College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300071 (China); Liang, Erjun, E-mail: ejliang@zzu.edu.cn [School of Physical Science and Engineering and Key Laboratory of Materials Physics of Ministry of Education of China, Zhengzhou University, Zhengzhou 450052 (China)

2016-02-07

III–V semiconductor interfacing with high-κ gate oxide is crucial for the high mobility metal-oxide-semiconductor field transistor device. With density functional theory calculations, we explored the band offsets and electronic structures of the In{sub 0.5}Ga{sub 0.5}As/InP interfaces with various interfacial bondings. Among six different bonding interfaces, we found that P-In(Ga) bonding interface showed the highest stability. Local density of states calculations was adopted to calculate the band offsets. Except for the metallic interface, we noticed that neither valence band offset nor conduction band offset depended on the interfacial bondings. For the most stable P-In(Ga) interface, we did not observe any gap states. Furthermore, we explored the P-In(Ga) interfaces with interfacial P-As exchange defects, which slightly modified the interface stability and the band offsets but did not produce any gap states. These findings provide solid evidence that InP could serve as a promising interfacial passivation layer between III–V material and high-κ oxide in the application of high mobility devices.

In-situ Transmission Electron Microscopy and Spectroscopy Studies of Interfaces in Li-ion Batteries: Challenges and Opportunities

International Nuclear Information System (INIS)

Wang, Chong M.; Xu, Wu; Liu, Jun; Choi, Daiwon; Arey, Bruce W.; Saraf, Laxmikant V.; Zhang, Jiguang; Yang, Zhenguo; Thevuthasan, Suntharampillai; Baer, Donald R.; Salmon, Norman

2010-01-01

The critical challenge facing the lithium ion battery development is the basic understanding of the structural evolution during the cyclic operation of the battery and the consequence of the structural evolution on the properties of the battery. Although transmission electron microscopy (TEM) and spectroscopy have been evolved to a stage such that it can be routinely used to probe into both the structural and chemical composition of the materials with a spatial resolution of a single atomic column, a direct in-situ TEM observation of structural evolution of the materials in lithium ion battery during the dynamic operation of the battery has never been reported. This is related to three factors: high vacuum operation of a TEM; electron transparency requirement of the region to be observed, and the difficulties dealing with the liquid electrolyte of lithium ion battery. In this paper, we report the results of exploring the in-situ TEM techniques for observation of the interface in lithium ion battery during the operation of the battery. A miniature battery was fabricated using a nanowire and an ionic liquid electrolyte. The structure and chemical composition of the interface across the anode and the electrolyte was studied using TEM imaging, electron diffraction, and electron energy loss spectroscopy. In addition, we also explored the possibilities of carrying out in-situ TEM studies of lithium ion batteries with a solid state electrolyte.

Enhancement of Linear Circuit Program

DEFF Research Database (Denmark)

Gaunholt, Hans; Dabu, Mihaela; Beldiman, Octavian

1996-01-01

In this report a preliminary user friendly interface has been added to the LCP2 program making it possible to describe an electronic circuit by actually drawing the circuit on the screen. Component values and other options and parameters can easily be set by the aid of the interface. The interface...

Interfacing of DNA with carbon nanotubes for nanodevice applications

Energy Technology Data Exchange (ETDEWEB)

Rastogi, Richa, E-mail: richa.bend@gmail.com [Biomolecular Electronics and Nanotechnology Division (BEND), Central Scientific Instruments Organisation (CSIO), Sector-30C, Chandigarh 160030 (India); Centre of Advanced Studies in Physics, Punjab University, Sector-14, Chandigarh 160014 (India); Dhindsa, Navneet [Biomolecular Electronics and Nanotechnology Division (BEND), Central Scientific Instruments Organisation (CSIO), Sector-30C, Chandigarh 160030 (India); Suri, C. Raman [Biosensor Division, Institute of Microbial Technology (IMTECH), Sector-39, Chandigarh 160039 (India); Pant, B.D. [Central Electronics Engineering Research Institute, Pilani, Rajasthan (India); Tripathi, S.K. [Centre of Advanced Studies in Physics, Punjab University, Sector-14, Chandigarh 160014 (India); Kaur, Inderpreet; Bharadwaj, Lalit M. [Biomolecular Electronics and Nanotechnology Division (BEND), Central Scientific Instruments Organisation (CSIO), Sector-30C, Chandigarh 160030 (India)

2012-08-15

In nanotechnology, carbon nanotubes are evolving as 'hot spot' due to their applications as most sensitive biosensors. Thus, study of effect of biomolecular interaction is prerequisite for their electrical application in biosensors and bioelectronics. Here, we have explored this effect on electrical properties of carbon nanotubes with DNA as a model biomolecule. A stable conjugate of carbon nanotubes with DNA is formed via covalent methodology employing quantum dot as fluoropore and characterized with various spectroscopic, fluoroscopic and microscopic techniques. CNT-DNA adduct showed decreased transconductance (from 614.46 {mu}S to 1.34 {mu}S) and shift of threshold voltage (from -0.85 V to 2.5 V) due to change in Schottky barriers at metal-nanotube contact. In addition, decrease in hole mobility (from 4.46 Multiplication-Sign 10{sup 6} to 9.72 Multiplication-Sign 10{sup 3} cm{sup 2} V{sup -1} s{sup -1}) and increase in ON-linear resistance (from 74 k Ohm-Sign to 0.44 M Ohm-Sign ) conclude large change in device parameters. On the one hand, this substantial change in device parameters after interfacing with biomolecules supports application of carbon nanotubes in the field of biosensors while on the other hand, the same can limit their use in future power electronic devices where stability in device parameters is essential. -- Graphical abstract: Carbon nanotubes are interfaced with DNA via covalent interactions and characterized with spectroscopic, fluoroscopic and microscopic techniques. Electrical characterization of this stable SWNT-DNA conjugate shows decreased transconductance and shift of threshold voltage towards positive gate voltages. On the one hand, this substantial change in device parameters after interfacing with biomolecules supports application of carbon nanotubes in the field of biosensors while on the other hand, the same can limit their use in future power electronic devices where stability in device parameters is essential

Atomic and electronic structure of a copper/graphene interface as prepared and 1.5 years after

Science.gov (United States)

Boukhvalov, D. W.; Bazylewski, P. F.; Kukharenko, A. I.; Zhidkov, I. S.; Ponosov, Yu. S.; Kurmaev, E. Z.; Cholakh, S. O.; Lee, Y. H.; Chang, G. S.

2017-12-01

We report the results of X-ray spectroscopy and Raman measurements of as-prepared graphene on a high quality copper surface and the same materials after 1.5 years under different conditions (ambient and low humidity). The obtained results were compared with density functional theory calculations of the formation energies and electronic structures of various structural defects in graphene/Cu interfaces. For evaluation of the stability of the carbon cover, we propose a two-step model. The first step is oxidation of the graphene, and the second is perforation of graphene with the removal of carbon atoms as part of the carbon dioxide molecule. Results of the modeling and experimental measurements provide evidence that graphene grown on high-quality copper substrate becomes robust and stable in time (1.5 years). However, the stability of this interface depends on the quality of the graphene and the number of native defects in the graphene and substrate. The effect of the presence of a metallic substrate with defects on the stability and electronic structure of graphene is also discussed

Interface structure and stabilization of metastable B2-FeSi/Si(111) studied with low-energy electron diffraction and density functional theory

International Nuclear Information System (INIS)

Walter, S; Blobner, F; Krause, M; Mueller, S; Heinz, K; Starke, U

2003-01-01

We present a combined experimental and theoretical investigation of the interface between a B2-type FeSi film and Si(111). Using an ultra-thin B2-FeSi film grown on Si(111), the interface is still reached by electrons, so quantitative low-energy electron diffraction (LEED) could be applied to determine the bonding geometry experimentally. As a result, the local configuration at the shallow buried interface is characterized by near-substrate Fe atoms being 8-fold coordinated to Si atoms and by the silicide unit cell being rotated by 180 deg. with respect to the Si unit cell (B8 configuration). The interface energetics were explored by total-energy calculations using density functional theory (DFT). The B8-type interface proves to be the most stable one, consistent with the experimental findings. The atomic geometries obtained experimentally (LEED) and theoretically (DFT) agree within the limits of errors. Additionally, the calculations explain the stabilization of the B2 phase, which is unstable as bulk material: the analysis of the elastic behaviour reveals a reversed energy hierarchy of B2 and the bulk stable B20 phase when epitaxial growth on Si(111) is enforced

Electron transfer reactions to probe the electrode/solution interface

Energy Technology Data Exchange (ETDEWEB)

Capitanio, F.; Guerrini, E.; Colombo, A.; Trasatti, S. [Milan Univ., Milan (Italy). Dept. of Physical Chemistry and Electrochemistry

2008-07-01

The reactions that occur at the interface between an electrode and an electrolyte were examined with particular reference to the interaction of different electrode surfaces with redox couples. A semi-integration or convolution technique was used to study the kinetics of electron transfer on different electrode materials with different hydrophilic behaviour, such as Boron-Doped-Diamond (BDD), Au and Pt. Standard reversible redox couples were also investigated, including (Fe3+/2+, Fe(CN)63-/4-, Ru(NH3)63+/2+, Co(NH3)63+/2+, Ir4+/3+, V4+/5+ and V3+/2+). The proposed method proved to be simple, straightforward and reliable since the obtained kinetic information was in good agreement with data in the literature. It was concluded that the kinetics of the electrode transfer reactions depend on the chemical nature of the redox couple and electrode material. The method should be further extended to irreversible couples and other electrode materials such as mixed oxide electrodes. 3 refs., 2 figs.

UV photon and low-energy (5--150 eV) electron-stimulated processes at environmental interfaces

International Nuclear Information System (INIS)

Orlando, T.M.

1997-01-01

Irradiation of surfaces and interfaces with low-energy (5--150 eV) electrons and ultraviolet photons occurs during the storage of ''mixed'' (chemical/radioactive) waste forms and during processing steps which involve the use of low temperature plasmas. It is well known that electron- and photon-stimulated desorption (ESD and PSD) from wide band-gap materials and interfaces can be initiated by Auger decay of deep valence and shallow core holes. This process consists of hole production, Auger decay, reversal of the Madelung potential, and ion expulsion due to the Coulomb repulsion. ESD and PSD of neutrals also occurs and involves production of electron-hole pairs and excitons. Generally, neutral yields dominate ESD and PSD cross sections, which typically vary between ∼10 -16 and 10 -22 cm 2 . The authors present results on the ESD and PSD of environmentally relevant substrates such as ZrO 2 (100), soda-glass, and NaNO 3 . The major cation thresholds and yields indicate that ESD and PSD from these complex materials involves Auger stimulated events. In particular, desorption thresholds correlate with ionization of the O(2s), Zr(4p), Si(2p) and Na(2s) levels. The near band-gap threshold energy (∼5--7 eV) for the desorption of neutrals (i.e., atomic oxygen, NO, etc) demonstrate the overall importance of self-trapped and localized excitons in both ESD and PSD of typical ceramics and oxides

Utility and recognition of lines and linear patterns on electronic displays depicting aeronautical charting information

Science.gov (United States)

2009-01-01

This report describes a study conducted to explore the utility and recognition of lines and linear patterns on electronic displays depicting aeronautical charting information. The study gathered data from a large number of pilots who conduct all type...

Propagation of high frequency electrostatic surface waves along the planar interface between plasma and dusty plasma

Science.gov (United States)

Mishra, Rinku; Dey, M.

2018-04-01

An analytical model is developed that explains the propagation of a high frequency electrostatic surface wave along the interface of a plasma system where semi-infinite electron-ion plasma is interfaced with semi-infinite dusty plasma. The model emphasizes that the source of such high frequency waves is inherent in the presence of ion acoustic and dust ion acoustic/dust acoustic volume waves in electron-ion plasma and dusty plasma region. Wave dispersion relation is obtained for two distinct cases and the role of plasma parameters on wave dispersion is analyzed in short and long wavelength limits. The normalized surface wave frequency is seen to grow linearly for lower wave number but becomes constant for higher wave numbers in both the cases. It is observed that the normalized frequency depends on ion plasma frequencies when dust oscillation frequency is neglected.

First-principles investigation of the effect of oxidation on the electronic structure and magnetic properties at the FeRh/MgO (0 0 1) interface

Energy Technology Data Exchange (ETDEWEB)

Sakhraoui, T., E-mail: tsakhrawi@yahoo.com [Laboratoire de la Matière Condensée et des Nanosciences, Département de Physique, Faculté des Sciences de Monastir, 5019 Monastir (Tunisia); Université de Strasbourg, CNRS, IPCMS, UMR 7504, F-67000 Strasbourg (France); Said, M. [Laboratoire de la Matière Condensée et des Nanosciences, Département de Physique, Faculté des Sciences de Monastir, 5019 Monastir (Tunisia); Alouani, M. [Université de Strasbourg, CNRS, IPCMS, UMR 7504, F-67000 Strasbourg (France)

2017-06-15

Highlights: • Density functional theory is used to study the interface between the FeRh alloy and MgO. • We focus on the effect of the oxidation on the electronic structure and magnetic properties of the FeRh/MgO (0 0 1) interface. • We show the change on the structure of the Fe-d states. • We examine the charge transfer and the local spin density modification after interface oxidation. - Abstract: The effect of interfacial oxidation on electronic structure and magnetic properties at the FeRh/MgO (0 0 1) interface is studied by ab initio methods. The results show the formation of an interfacial FeO-like layer between the FeRh and the MgO barrier, which has a direct impact on Fe e{sub g} states at the interface. It is shown that these e{sub g} states are more affected than that the t{sub 2g} states at the Fermi level due to the strong hybridization of these states with the p-states of oxygen. Thus, the oxidation modifies crucially the electronic structure and the magnetic properties as compared to those of an ideal interface. In particular, it was found that spin polarization of the ferromagnetic state is substantially enhanced. A simple two-current Julliere model shows that the TMR increases with oxidation.

Monte Carlo Simulation of a Linear Accelerator and Electron Beam Parameters Used in Radiotherapy

Directory of Open Access Journals (Sweden)

Mohammad Taghi Bahreyni Toossi

2009-06-01

Full Text Available Introduction: In recent decades, several Monte Carlo codes have been introduced for research and medical applications. These methods provide both accurate and detailed calculation of particle transport from linear accelerators. The main drawback of Monte Carlo techniques is the extremely long computing time that is required in order to obtain a dose distribution with good statistical accuracy. Material and Methods: In this study, the MCNP-4C Monte Carlo code was used to simulate the electron beams generated by a Neptun 10 PC linear accelerator. The depth dose curves and related parameters to depth dose and beam profiles were calculated for 6, 8 and 10 MeV electron beams with different field sizes and these data were compared with the corresponding measured values. The actual dosimetry was performed by employing a Welhofer-Scanditronix dose scanning system, semiconductor detectors and ionization chambers. Results: The result showed good agreement (better than 2% between calculated and measured depth doses and lateral dose profiles for all energies in different field sizes. Also good agreements were achieved between calculated and measured related electron beam parameters such as E0, Rq, Rp and R50. Conclusion: The simulated model of the linac developed in this study is capable of computing electron beam data in a water phantom for different field sizes and the resulting data can be used to predict the dose distributions in other complex geometries.

Projection-reduction method applied to deriving non-linear optical conductivity for an electron-impurity system

Directory of Open Access Journals (Sweden)

Nam Lyong Kang

2013-07-01

Full Text Available The projection-reduction method introduced by the present authors is known to give a validated theory for optical transitions in the systems of electrons interacting with phonons. In this work, using this method, we derive the linear and first order nonlinear optical conductivites for an electron-impurity system and examine whether the expressions faithfully satisfy the quantum mechanical philosophy, in the same way as for the electron-phonon systems. The result shows that the Fermi distribution function for electrons, energy denominators, and electron-impurity coupling factors are contained properly in organized manners along with absorption of photons for each electron transition process in the final expressions. Furthermore, the result is shown to be represented properly by schematic diagrams, as in the formulation of electron-phonon interaction. Therefore, in conclusion, we claim that this method can be applied in modeling optical transitions of electrons interacting with both impurities and phonons.

Communication: Predictive partial linearized path integral simulation of condensed phase electron transfer dynamics

International Nuclear Information System (INIS)

Huo, Pengfei; Miller, Thomas F. III; Coker, David F.

2013-01-01

A partial linearized path integral approach is used to calculate the condensed phase electron transfer (ET) rate by directly evaluating the flux-flux/flux-side quantum time correlation functions. We demonstrate for a simple ET model that this approach can reliably capture the transition between non-adiabatic and adiabatic regimes as the electronic coupling is varied, while other commonly used semi-classical methods are less accurate over the broad range of electronic couplings considered. Further, we show that the approach reliably recovers the Marcus turnover as a function of thermodynamic driving force, giving highly accurate rates over four orders of magnitude from the normal to the inverted regimes. We also demonstrate that the approach yields accurate rate estimates over five orders of magnitude of inverse temperature. Finally, the approach outlined here accurately captures the electronic coherence in the flux-flux correlation function that is responsible for the decreased rate in the inverted regime

Optimal Operation of Distribution Electronic Power Transformer Using Linear Quadratic Regulator Method

Directory of Open Access Journals (Sweden)

Mohammad Hosein Rezaei

2011-10-01

Full Text Available Transformers perform many functions such as voltage transformation, isolation and noise decoupling. They are indispensable components in electric power distribution system. However, at low frequencies (50 Hz, they are one of the heaviest and the most expensive equipment in an electrical distribution system. Nowadays, electronic power transformers are used instead of conventional power transformers that do voltage transformation and power delivery in power system by power electronic converter. In this paper, the structure of distribution electronic power transformer (DEPT are analized and then paid attention on the design of a linear-quadratic-regulator (LQR with integral action to improve dynamic performance of DEPT with voltage unbalance, voltage sags, voltage harmonics and voltage flicker. The presentation control strategy is simulated by MATLAB/SIMULINK. In addition, the results that are in terms of dc-link reference voltage, input and output voltages clearly show that a better dynamic performance can be achieved by using the LQR method when compared to other techniques.

A comparison of the basic photon and electron dosimetry data for Neptun 10PC linear accelerators

International Nuclear Information System (INIS)

Shokrani, P.; Monadi, S.

2008-01-01

In recent years the similarity of dosimetric characteristics of modern linear accelerators with the same make, model and nominal energy, has become more common. The goal of this study was to quantitatively investigate the reproducibility of the basic photon and electron dosimetry data from Neptun 10PC accelerators across the institutions. In the current study, the photon and electron dosimetry data collected during acceptance and initial commissioning of six Neptun 10PC linear accelerators are analyzed. The dates of original installations of these six machines were evenly spread out over a 5 year period and the series of measurements were conducted during an average of 1-2 months after original installations. All units had identical energies and beam modifiers. For photon beams, the collected data include depth dose data, output factors and beam profile data in water. For electron beams, in addition to depth dose data and output factors, the effective source skin distance for 10 x 10 cm field size is also presented. For most beam parameters the variation (one standard deviation), was less than 1.0% (less than 2% for 2 parameters). A variation of this magnitude is expected to be observed during annual calibration of well-maintained accelerators. In conclusion, this study is presenting a consistent set of data for Neptun 10PC linear accelerators. This consistency implies that for this model, a standard data set of basic photon and electron dosimetry could be established, as a guide for future commissioning, beam modeling and quality assurance purposes. (authors)

Ultrafast chemical interface scattering as an additional decay channel for nascent nonthermal electrons in small metal nanoparticles.

Science.gov (United States)

Bauer, Christophe; Abid, Jean-Pierre; Fermin, David; Girault, Hubert H

2004-05-15

The use of 4.2 nm gold nanoparticles wrapped in an adsorbates shell and embedded in a TiO2 metal oxide matrix gives the opportunity to investigate ultrafast electron-electron scattering dynamics in combination with electronic surface phenomena via the surface plasmon lifetimes. These gold nanoparticles (NPs) exhibit a large nonclassical broadening of the surface plasmon band, which is attributed to a chemical interface damping. The acceleration of the loss of surface plasmon phase coherence indicates that the energy and the momentum of the collective electrons can be dissipated into electronic affinity levels of adsorbates. As a result of the preparation process, gold NPs are wrapped in a shell of sulfate compounds that gives rise to a large density of interfacial molecules confined between Au and TiO2, as revealed by Fourier-transform-infrared spectroscopy. A detailed analysis of the transient absorption spectra obtained by broadband femtosecond transient absorption spectroscopy allows separating electron-electron and electron-phonon interaction. Internal thermalization times (electron-electron scattering) are determined by probing the decay of nascent nonthermal electrons (NNEs) and the build-up of the Fermi-Dirac electron distribution, giving time constants of 540 to 760 fs at 0.42 and 0.34 eV from the Fermi level, respectively. Comparison with literature data reveals that lifetimes of NNEs measured for these small gold NPs are more than four times longer than for silver NPs with similar sizes. The surprisingly long internal thermalization time is attributed to an additional decay mechanism (besides the classical e-e scattering) for the energy loss of NNEs, identified as the ultrafast chemical interface scattering process. NNEs experience an inelastic resonant scattering process into unoccupied electronic states of adsorbates, that directly act as an efficient heat bath, via the excitation of molecular vibrational modes. The two-temperature model is no longer

Tabulated square-shaped source model for linear accelerator electron beam simulation.

Science.gov (United States)

Khaledi, Navid; Aghamiri, Mahmood Reza; Aslian, Hossein; Ameri, Ahmad

2017-01-01

Using this source model, the Monte Carlo (MC) computation becomes much faster for electron beams. The aim of this study was to present a source model that makes linear accelerator (LINAC) electron beam geometry simulation less complex. In this study, a tabulated square-shaped source with transversal and axial distribution biasing and semi-Gaussian spectrum was investigated. A low energy photon spectrum was added to the semi-Gaussian beam to correct the bremsstrahlung X-ray contamination. After running the MC code multiple times and optimizing all spectrums for four electron energies in three different medical LINACs (Elekta, Siemens, and Varian), the characteristics of a beam passing through a 10 cm × 10 cm applicator were obtained. The percentage depth dose and dose profiles at two different depths were measured and simulated. The maximum difference between simulated and measured percentage of depth doses and dose profiles was 1.8% and 4%, respectively. The low energy electron and photon spectrum and the Gaussian spectrum peak energy and associated full width at half of maximum and transversal distribution weightings were obtained for each electron beam. The proposed method yielded a maximum computation time 702 times faster than a complete head simulation. Our study demonstrates that there was an excellent agreement between the results of our proposed model and measured data; furthermore, an optimum calculation speed was achieved because there was no need to define geometry and materials in the LINAC head.

Prediction of a mobile two-dimensional electron gas at the LaSc O3 /BaSn O3 (001) interface

Science.gov (United States)

Paudel, Tula R.; Tsymbal, Evgeny Y.

2017-12-01

Two-dimensional electron gases (2DEG) at oxide interfaces, such as LaAl O3 /SrTi O3 (001), have aroused significant interest due to their high carrier density (˜1014c m-2 ) and strong lateral confinement (˜1 nm). However, these 2DEGs are normally hosted by the weakly dispersive and degenerate d bands (e.g., Ti -3 d bands), which are strongly coupled to the lattice, causing mobility of such 2DEGs to be relatively low at room temperature (˜1 c m2/Vs ). Here, we propose using oxide host materials with the conduction bands formed from s electrons to increase carrier mobility and soften its temperature dependence. Using first-principles density functional theory calculations, we investigate LaSc O3 /BaSn O3 (001) heterostructure and as a model system, where the conduction band hosts the s -like carriers. We find that the polar discontinuity at this interface leads to electronic reconstruction resulting in the formation of the 2DEG at this interface. The conduction electrons reside in the highly dispersive Sn -5 s bands, which have a large band width and a low effective mass. The predicted 2DEG is expected to be highly mobile even at room temperature due to the reduced electron-phonon scattering via the inter-band scattering channel. A qualitatively similar behavior is predicted for a doped BaSn O3 , where a monolayer of BaO is replaced with LaO. We anticipate that the quantum phenomena associated with these 2DEGs to be more pronounced owing to the high mobility of the carriers.

Room-temperature mobility above 2200 cm{sup 2}/V·s of two-dimensional electron gas in a sharp-interface AlGaN/GaN heterostructure

Energy Technology Data Exchange (ETDEWEB)

Chen, Jr-Tai, E-mail: jrche@ifm.liu.se; Persson, Ingemar; Nilsson, Daniel; Hsu, Chih-Wei; Palisaitis, Justinas; Forsberg, Urban; Persson, Per O. Å.; Janzén, Erik [Department of Physics, Chemistry, and Biology, Linköping University, SE 581 83 Linköping (Sweden)

2015-06-22

A high mobility of 2250 cm{sup 2}/V·s of a two-dimensional electron gas (2DEG) in a metalorganic chemical vapor deposition-grown AlGaN/GaN heterostructure was demonstrated. The mobility enhancement was a result of better electron confinement due to a sharp AlGaN/GaN interface, as confirmed by scanning transmission electron microscopy analysis, not owing to the formation of a traditional thin AlN exclusion layer. Moreover, we found that the electron mobility in the sharp-interface heterostructures can sustain above 2000 cm{sup 2}/V·s for a wide range of 2DEG densities. Finally, it is promising that the sharp-interface AlGaN/GaN heterostructure would enable low contact resistance fabrication, less impurity-related scattering, and trapping than the AlGaN/AlN/GaN heterostructure, as the high-impurity-contained AlN is removed.

Interfacial Energy Alignment at the ITO/Ultra-Thin Electron Selective Dielectric Layer Interface and Its Effect on the Efficiency of Bulk-Heterojunction Organic Solar Cells.

Science.gov (United States)

Itoh, Eiji; Goto, Yoshinori; Saka, Yusuke; Fukuda, Katsutoshi

2016-04-01

We have investigated the photovoltaic properties of an inverted bulk heterojunction (BHJ) cell in a device with an indium-tin-oxide (ITO)/electron selective layer (ESL)/P3HT:PCBM active layer/MoOx/Ag multilayered structure. The insertion of only single layer of poly(diallyl-dimethyl-ammonium chloride) (PDDA) cationic polymer film (or poly(ethyleneimine) (PEI) polymeric interfacial dipole layer) and titanium oxide nanosheet (TN) films as an ESL effectively improved cell performance. Abnormal S-shaped curves were observed in the inverted BHJ cells owing to the contact resistance across the ITO/active layer interface and the ITO/PDDA/TN/active layer interface. The series resistance across the ITO/ESL interface in the inverted BHJ cell was successfully reduced using an interfacial layer with a positively charged surface potential with respect to ITO base electrode. The positive dipole in PEI and the electronic charge phenomena at the electrophoretic deposited TN (ED-TN) films on ITO contributed to the reduction of the contact resistance at the electrode interface. The surface potential measurement revealed that the energy alignment by the transfer of electronic charges from the ED-TN to the base electrodes. The insertion of the ESL with a large positive surface potential reduced the potential barrier for the electron injection at ITO/TN interface and it improved the photovoltaic properties of the inverted cell with an ITO/TN/active layer/MoOx/Ag structure.

Polarized electron sources for linear colliders

International Nuclear Information System (INIS)

Clendenin, J.E.; Ecklund, S.D.; Miller, R.H.; Schultz, D.C.; Sheppard, J.C.

1992-07-01

Linear colliders require high peak current beams with low duty factors. Several methods to produce polarized e - beams for accelerators have been developed. The SLC, the first linear collider, utilizes a photocathode gun with a GaAs cathode. Although photocathode sources are probably the only practical alternative for the next generation of linear colliders, several problems remain to be solved, including high voltage breakdown which poisons the cathode, charge limitations that are associated with the condition of the semiconductor cathode, and a relatively low polarization of ≤5O%. Methods to solve or at least greatly reduce the impact of each of these problems are at hand

Dose linearity and uniformity of a linear accelerator designed for implementation of multileaf collimation system-based intensity modulated radiation therapy

International Nuclear Information System (INIS)

Saw, Cheng B.; Li Sicong; Ayyangar, Komanduri M.; Yoe-Sein, Maung; Pillai, Susha; Enke, Charles A.; Celi, Juan C.

2003-01-01

The dose linearity and uniformity of a linear accelerator designed for multileaf collimation system- (MLC) based IMRT was studied as a part of commissioning and also in response to recently published data. The linear accelerator is equipped with a PRIMEVIEW, a graphical interface and a SIMTEC IM-MAXX, which is an enhanced autofield sequencer. The SIMTEC IM-MAXX sequencer permits the radiation beam to be 'ON' continuously while delivering intensity modulated radiation therapy subfields at a defined gantry angle. The dose delivery is inhibited when the electron beam in the linear accelerator is forced out of phase with the microwave power while the MLC configures the field shape of a subfield. This beam switching mechanism reduces the overhead time and hence shortens the patient treatment time. The dose linearity, reproducibility, and uniformity were assessed for this type of dose delivery mechanism. The subfields with monitor units ranged from 1 MU to 100 MU were delivered using 6 MV and 23 MV photon beams. The doses were computed and converted to dose per monitor unit. The dose linearity was found to vary within 2% for both 6 MV and 23 MV photon beam using high dose rate setting (300 MU/min) except below 2 MU. The dose uniformity was assessed by delivering 4 subfields to a Kodak X-OMAT TL film using identical low monitor units. The optical density was converted to dose and found to show small variation within 3%. Our results indicate that this linear accelerator with SIMTEC IM-MAXX sequencer has better dose linearity, reproducibility, and uniformity than had been reported

Variation of carrier concentration and interface trap density in 8MeV electron irradiated c-Si solar cells

Energy Technology Data Exchange (ETDEWEB)

Bhat, Sathyanarayana, E-mail: asharao76@gmail.com; Rao, Asha, E-mail: asharao76@gmail.com [Department of Physics, Mangalore Institute of Technology and Engineering, Moodabidri, Mangalore-574225 (India); Krishnan, Sheeja [Department of Physics, Sri Devi Institute of Technology, Kenjar, Mangalore-574142 (India); Sanjeev, Ganesh [Microtron Centre, Department of Physics, Mangalore University, Mangalagangothri-574199 (India); Suresh, E. P. [Solar Panel Division, ISRO Satellite Centre, Bangalore-560017 (India)

2014-04-24

The capacitance and conductance measurements were carried out for c-Si solar cells, irradiated with 8 MeV electrons with doses ranging from 5kGy – 100kGy in order to investigate the anomalous degradation of the cells in the radiation harsh environments. Capacitance – Voltage measurements indicate that there is a slight reduction in the carrier concentration upon electron irradiation due to the creation of radiation induced defects. The conductance measurement results reveal that the interface state densities and the trap time constant increases with electron dose due to displacement damages in c-Si solar cells.

Interface characteristics of spin-on-dielectric SiO{sub x}-buffered passivation layers for AlGaN/GaN high electron mobility transistors

Energy Technology Data Exchange (ETDEWEB)

Ko, Pil-Seok; Park, Kyoung-Seok; Yoon, Yeo-Chang [Division of Electronics and Electrical Engineering, Dongguk University, 100-715 Seoul (Korea, Republic of); Sheen, Mi-Hyang [Department of Materials Science Engineering, Seoul National University, 151-742 Seoul (Korea, Republic of); Kim, Sam-Dong, E-mail: samdong@dongguk.edu [Division of Electronics and Electrical Engineering, Dongguk University, 100-715 Seoul (Korea, Republic of)

2015-08-31

To reveal the cause for significant enhancement of dc current performance of the AlGaN/GaN high electron mobility transistors (HEMTs) with the spin-on-dielectric (SOD) SiO{sub x}-buffered passivation structure compared to the conventional Si{sub 3}N{sub 4} passivation deposited by plasma-enhanced vapor deposition (PECVD), we characterized the passivation interfaces using the cross-sectional transmission electron microscopy, cathodoluminescence, capacitance–voltage (C–V) characterizations, and Hall-effect measurements. The interface state density of PECVD Si{sub 3}N{sub 4} passivation was in the range of 10{sup 12}–10{sup 13} cm{sup −2} eV{sup −1}, which is one-order higher than that of the SOD (10{sup 11}–10{sup 12} cm{sup −2} eV{sup −1}) as measured by C–V measurements from the metal–insulator–semiconductor capacitors. Higher density of effective oxide charge density (especially dominant contribution of ionic mobile charge) was also derived from the PECVD Si{sub 3}N{sub 4} passivation. A well-resolved reduction of the electron Hall mobility of the Si{sub 3}N{sub 4} passivation compared to that of the perhydropolysilazane SOD passivation, which can be due to the higher-density interface states and trap charges, can answer the relative dc current collapse of our HEMT devices. - Highlights: • Spin-on-dielectric (SOD)-buffered passivation for AlGaN/GaN HEMTs • Characterize the charge density and interface states using the C–V measurements • SOD-buffered passivation minimizes surface states at the interface. • DC performance of SOD-buffered structure is due to the interface characteristics.

Fabrication of CuInS2-sensitized solar cells via an improved SILAR process and its interface electron recombination.

Science.gov (United States)

Xu, Xueqing; Wan, Qingcui; Luan, Chunyan; Mei, Fengjiao; Zhao, Qian; An, Ping; Liang, Zhurong; Xu, Gang; Zapien, Juan Antonio

2013-11-13

Tetragonal CuInS2 (CIS) has been successfully deposited onto mesoporous TiO2 films by in-sequence growth of InxS and CuyS via a successive ionic layer absorption and reaction (SILAR) process and postdeposition annealing in sulfur ambiance. X-ray diffraction and Raman measurements showed that the obtained tetragonal CIS consisted of a chalcopyrite phase and Cu-Au ordering, which related with the antisite defect states. For a fixed Cu-S deposition cycle, an interface layer of β-In2S3 formed at the TiO2/CIS interface with suitable excess deposition of In-S. In the meantime, the content of the Cu-Au ordering phase decreased to a reasonable level. These facts resulted in the retardance of electron recombination in the cells, which is proposed to be dominated by electron transfer from the conduction band of TiO2 to the unoccupied defect states in CIS via exponentially distributed surface states. As a result, a relatively high efficiency of ~0.92% (V(oc) = 0.35 V, J(sc) = 8.49 mA cm(-2), and FF = 0.31) has been obtained. Last, but not least, with an overloading of the sensitizers, a decrease in the interface area between the sensitized TiO2 and electrolytes resulted in deceleration of hole extraction from CIS to the electrolytes, leading to a decrease in the fill factor of the solar cells. It is indicated that the unoccupied states in CIS with energy levels below EF0 of the TiO2 films play an important role in the interface electron recombination at low potentials and has a great influence on the fill factor of the solar cells.

Electronic characterization of LaAlO{sub 3}-SrTiO{sub 3} interfaces by scanning tunneling spectroscopy; Elektronische Charakterisierung von LaAlO{sub 3}-SrTiO{sub 3}-Grenzflaechen mittels Rastertunnelspektroskopie

Energy Technology Data Exchange (ETDEWEB)

Breitschaft, Martin

2010-10-22

When LaAlO{sub 3} is epitaxially grown on TiO{sub 2}-terminated SrTiO{sub 3}, an electrically conducting interface is generated. In this respect, the physical properties of the interface differ substantially from those of both LaAlO{sub 3} and SrTiO{sub 3}, which are electrically insulating in bulk form. This dissertation looks into the question of the microscopic structure of the conducting two-dimensional interface electron system. Comparing the electronic density of states of LaAlO{sub 3}-SrTiO{sub 3} interfaces measured by scanning tunneling spectroscopy with results of density functional theory, the interface electron system is found to be substantially coined by the hosting transition metal lattices. The comparison yields a detailed picture of the microscopic structure of the interface electron system. (orig.)

Charge transfer mechanism for the formation of metallic states at the KTaO3/SrTiO3 interface

KAUST Repository

Nazir, Safdar

2011-03-29

The electronic and optical properties of the KTaO3/SrTiO3 heterointerface are analyzed by the full-potential linearized augmented plane-wave approach of density functional theory. Optimization of the atomic positions points at subordinate changes in the crystal structure and chemical bonding near the interface, which is due to a minimal lattice mismatch. The creation of metallic interface states thus is not affected by structural relaxation but can be explained by charge transfer between transition metal and oxygen atoms. It is to be expected that a charge transfer is likewise important for related interfaces such as LaAlO3/SrTiO3. The KTaO3/SrTiO3 system is ideal for disentangling the complex behavior of metallic interface states, since almost no structural relaxation takes place.

Electron-selective contacts via ultra-thin organic interface dipoles for silicon organic heterojunction solar cells

Science.gov (United States)

Reichel, Christian; Würfel, Uli; Winkler, Kristina; Schleiermacher, Hans-Frieder; Kohlstädt, Markus; Unmüssig, Moritz; Messmer, Christoph A.; Hermle, Martin; Glunz, Stefan W.

2018-01-01

In the last years, novel materials for the formation of electron-selective contacts on n-type crystalline silicon (c-Si) heterojunction solar cells were explored as an interfacial layer between the metal electrode and the c-Si wafer. Besides inorganic materials like transition metal oxides or alkali metal fluorides, also interfacial layers based on organic molecules with a permanent dipole moment are promising candidates to improve the contact properties. Here, the dipole effect plays an essential role in the modification of the interface and effective work function of the contact. The amino acids L-histidine, L-tryptophan, L-phenylalanine, glycine, and sarcosine, the nucleobase adenine, and the heterocycle 4-hydroxypyridine were investigated as dipole materials for an electron-selective contact on the back of p- and n-type c-Si with a metal electrode based on aluminum (Al). Furthermore, the effect of an added fluorosurfactant on the resulting contact properties was examined. The performance of n-type c-Si solar cells with a boron diffusion on the front was significantly increased when L-histidine and/or the fluorosurfactant was applied as a full-area back surface field. This improvement was attributed to the modification of the interface and the effective work function of the contact by the dipole material which was corroborated by numerical device simulations. For these solar cells, conversion efficiencies of 17.5% were obtained with open-circuit voltages (Voc) of 625 mV and fill factors of 76.3%, showing the potential of organic interface dipoles for silicon organic heterojunction solar cells due to their simple formation by solution processing and their low thermal budget requirements.

Design of cavities of a standing wave accelerating tube for a 6 MeV electron linear accelerator

Directory of Open Access Journals (Sweden)

S Zarei

2017-08-01

Full Text Available Side-coupled standing wave tubes in  mode are widely used in the low-energy electron linear accelerator, due to high accelerating gradient and low sensitivity to construction tolerances. The use of various simulation software for designing these kinds of tubes is very common nowadays. In this paper, SUPERFISH code and COMSOL are used for designing the accelerating and coupling cavities for a 6 MeV electron linear accelerator. Finite difference method in SUPERFISH code and Finite element method in COMSOL are used to solve the equations. Besides, dimension of accelerating and coupling cavities and also coupling iris dimension are optimized to achieve resonance frequency of 2.9985 MHz and coupling constant of 0.0112. Considering the results of this study and designing of the RF energy injection port subsequently, the construction of 6 MeV electron tube will be provided

Soft particles at a fluid interface

Science.gov (United States)

Mehrabian, Hadi; Harting, Jens; Snoeijer, Jacco H.

2015-11-01

Particles added to a fluid interface can be used as a surface stabilizer in the food, oil and cosmetic industries. As an alternative to rigid particles, it is promising to consider highly deformable particles that can adapt their conformation at the interface. In this study, we compute the shapes of soft elastic particles using molecular dynamics simulations of a cross-linked polymer gel, complemented by continuum calculations based on the linear elasticity. It is shown that the particle shape is not only affected by the Young's modulus of the particle, but also strongly depends on whether the gel is partially or completely wetting the fluid interface. We find that the molecular simulations for the partially wetting case are very accurately described by the continuum theory. By contrast, when the gel is completely wetting the fluid interface the linear theory breaks down and we reveal that molecular details have a strong influence on the equilibrium shape.

The use of the computer code PE2D in the electrostatic modelling of an electron beam generator vacuum diode interface

International Nuclear Information System (INIS)

Biddlecombe, C.S.; Edwards, C.B.; Shaw, M.J.

1981-10-01

The computer code PE2D has been used to optimise the design of a compact, 500kV, low inductance vacuum diode interface assembly for SPRITE, a sophisticated electron beam pumped exciplex laser system under construction at RAL. Electrostatic modelling of various dielectric interfaces has been achieved in cylindrical symmetry under conditions not amenable to more traditional methods of electrostatic field plotting. (author)

Evolution of the nickel/zirconia interface

International Nuclear Information System (INIS)

Shinde, S.L.; Olson, D.A.; De Jonghe, L.C.; Miller, R.A.

1986-01-01

The changes taking place at the nickel zirconia interface during oxidation in air at 900 0 C were studied using analytical electron microscopy (AEM). The nickel oxide layer growing at the interface and the stabilizers used in zirconia interact, giving different interface morphologies

Measurement system for pulse radiolysis at linear electron accelerator LAE 13/9

International Nuclear Information System (INIS)

Mirkowski, J.; Grodkowski, J.

1999-01-01

A new control and measurement system for a pulse radiolysis setup based on the linear electron accelerator LAE 13/9 is described. It consists of CAMAC apparatus, two oscilloscopes: Tektronix TDS620 and Iwatsu TS8123, and PC computer as a control unit for programming and controlling of the experiments and for results processing. The program is written using DELPHI 1.0 (Borland) programming platform and it can operate in WINDOWS 3.x or WINDOWS 95 environment. (author)

Growth parameter optimization and interface treatment for enhanced electron mobility in heavily strained GaInAs/AlInAs high electron mobility transistor structures

International Nuclear Information System (INIS)

Fedoryshyn, Yuriy; Ostinelli, Olivier; Alt, Andreas; Pallin, Angel; Bolognesi, Colombo R.

2014-01-01

The optimization of heavily strained Ga 0.25 In 0.75 As/Al 0.48 In 0.52 As high electron mobility transistor structures is discussed in detail. The growth parameters and the channel layer interfaces were optimized in order to maximize the mobility of the two-dimensional electron gas. Structures composed of an 11 nm thick channel layer and a 4 nm thick spacer layer exhibited electron mobilities as high as 15 100 cm 2 /Vs and 70 000 cm 2 /Vs at 300 and 77 K, respectively, for channels including InAs strained layers. The sheet carrier density was kept above 2.5 × 10 12  cm −2 throughout the entire study

Giant tunability of the two-dimensional electron gas at the interface of γ-Al₂O₃/SrTiO₃

DEFF Research Database (Denmark)

Niu, Wei; Zhang, Yu; Gan, Yulin

2017-01-01

a dielectric solid insulator, i.e. in the configuration of conventional field-effect transistors. To surpass this long-standing limit, we used ionic liquids as the dielectric layer for electrostatic gating of oxide interfaces in an electric double layer transistor (EDLT) configuration. Herein, we reported......Two-dimensional electron gases (2DEGs) formed at the interface between two oxide insulators provide a rich platform for the next generation of electronic devices. However, their high carrier density makes it rather challenging to control the interface properties under a low electric field through...

Photoinduced Electron Transfer of PAMAM Dendrimer-Zinc(II) Porphyrin Associates at Polarized Liquid|Liquid Interfaces.

Science.gov (United States)

Nagatani, Hirohisa; Sakae, Hiroki; Torikai, Taishi; Sagara, Takamasa; Imura, Hisanori

2015-06-09

The heterogeneous photoinduced electron-transfer reaction of the ion associates between NH2-terminated polyamidoamine (PAMAM) dendrimers and 5,10,15,20-tetrakis(4-sulfonatophenyl)porphyrinato zinc(II) (ZnTPPS(4-)) was studied at the polarized water|1,2-dichloroethane (DCE) interface. The positive photocurrent arising from the photoreduction of ZnTPPS(4-) by a lipophilic quencher, decamethylferrocene, in the interfacial region was significantly enhanced by the ion association with the PAMAM dendrimers. The photocurrent response of the dendrimer-ZnTPPS(4-) associates was dependent on the pH condition and on the generation of dendrimer. A few cationic additives such as polyallylamine and n-octyltrimethyammonium were also examined as alternatives to the PAMAM dendrimer, but the magnitude of the photocurrent enhancement was rather small. The high photoreactivity of the dendrimer-ZnTPPS(4-) associates was interpreted mainly as a result of the high interfacial concentration of photoreactive porphyrin units associated stably with the dendrimer which was preferably adsorbed at the polarized water|DCE interface. The photochemical data observed in the second and fourth generation PAMAM dendrimer systems demonstrated that the higher generation dendrimer which can incorporate a porphyrin molecule more completely in the interior is less efficient for the photocurrent enhancement at the interface. These results indicated that the photoreactivity of ionic reactant at a polarized liquid|liquid interface can readily be modified via ion association with the charged dendrimer.

Anomalous electron transport in Hall-effect thrusters: Comparison between quasi-linear kinetic theory and particle-in-cell simulations

Science.gov (United States)

Lafleur, T.; Martorelli, R.; Chabert, P.; Bourdon, A.

2018-06-01

Kinetic drift instabilities have been implicated as a possible mechanism leading to anomalous electron cross-field transport in E × B discharges, such as Hall-effect thrusters. Such instabilities, which are driven by the large disparity in electron and ion drift velocities, present a significant challenge to modelling efforts without resorting to time-consuming particle-in-cell (PIC) simulations. Here, we test aspects of quasi-linear kinetic theory with 2D PIC simulations with the aim of developing a self-consistent treatment of these instabilities. The specific quantities of interest are the instability growth rate (which determines the spatial and temporal evolution of the instability amplitude), and the instability-enhanced electron-ion friction force (which leads to "anomalous" electron transport). By using the self-consistently obtained electron distribution functions from the PIC simulations (which are in general non-Maxwellian), we find that the predictions of the quasi-linear kinetic theory are in good agreement with the simulation results. By contrast, the use of Maxwellian distributions leads to a growth rate and electron-ion friction force that is around 2-4 times higher, and consequently significantly overestimates the electron transport. A possible method for self-consistently modelling the distribution functions without requiring PIC simulations is discussed.

Computational Study of Nb-Doped-SnO₂/Pt Interfaces: Dopant Segregation, Electronic Transport, and Catalytic Properties

DEFF Research Database (Denmark)

Fu, Qiang; Halck, Niels Bendtsen; Hansen, Heine Anton

2017-01-01

functional theory and non equilibrium Green's function study, we investigate the Nb segregation at Pt/NTO interfaces under operational electrochemical conditions, and reveal the resulting effects on the electronic transport, as well as the catalytic properties. We find that the Nb dopants tend to aggregate......Carbon black, a state-of-the-art cathode material for proton exchange membrane fuel cells (PEMFCs), suffers from severe corrosion in practical applications. Niobium-doped tin dioxide (NTO) is a promising alternative to support the Pt catalysts at the cathodes. Here, through a combined density....... The electronic conductivities of the Pt/NTO systems are not particularly sensitive to the distance of the Nb dopants relative to the interface, but depend explicitly on the Nb concentration and configuration. Through a dopant induced ligand effect, the NTO substrates can improve the catalytic activity of the Pt...

The hybridized front end electronics of the Central Drift Chamber in the Stanford Linear Collider Detector

International Nuclear Information System (INIS)

Lo, C.C.; Kirsten, F.A.; Nakamura, M.

1987-10-01

In order to accommodate the high packaging density requirements for the front end electronics of the Central Drift Chamber (CDC) in the SLAC Linear Collider Detector (SLD), the CDC front end electronics has been hybridized. The hybrid package contains eight channels of amplifiers together with all the associated circuits for calibration, event recognition and power economy switching functions. A total of 1280 such hybrids are used in the CDC

Evolution of the electronic structure of C{sub 60}/La{sub 0.67}Sr{sub 0.33}MnO{sub 3} interface

Energy Technology Data Exchange (ETDEWEB)

Xie, Haipeng; Niu, Dongmei, E-mail: mayee@csu.edu.cn, E-mail: ygao@pas.rochester.edu; Lyu, Lu; Zhang, Hong; Zhang, Yuhe; Liu, Peng [Institute of Super-Microstructure and Ultrafast Process in Advanced Materials, School of Physics and Electronics, Central South University, Changsha, Hunan 410083 (China); Wang, Peng; Wu, Di [National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 (China); Gao, Yongli, E-mail: mayee@csu.edu.cn, E-mail: ygao@pas.rochester.edu [Institute of Super-Microstructure and Ultrafast Process in Advanced Materials, School of Physics and Electronics, Central South University, Changsha, Hunan 410083 (China); Department of Physics and Astronomy, University of Rochester, Rochester, New York 14627 (United States)

2016-01-04

The evolution of the electronic structure at the interface between fullerene (C{sub 60}) and La{sub 0.67}Sr{sub 0.33}MnO{sub 3} (LSMO) has been investigated with ultraviolet photoemission spectroscopy and X-ray photoemission spectroscopy. There is a 0.61 eV barrier for the electrons to be injected from LSMO to C{sub 60}. The energy bands keep bending upward with increasing C{sub 60} thickness. A total energy bending of 0.72 eV is observed, changing the C{sub 60} film from n-type to p-type. The n-p transition is ascribed to the diffusion of oxygen from LSMO to C{sub 60} which subsequently strips electrons from C{sub 60}, making the latter p-type. Our results suggest a buffer layer be inserted between the LSMO and C{sub 60} to lower the interface electron barrier and prevent deterioration of the C{sub 60} film in related spintronic devices.

Overlayer growth and electronic properties of the Bi/GaSb(110) interface

Science.gov (United States)

Gavioli, Luca; Betti, Maria Grazia; Casarini, Paolo; Mariani, Carlo

1995-06-01

The overlayer growth and electronic properties of the Bi/GaSb(110) interface and of the two-dimensional ordered (1×1)- and (1×2)-Bi layers have been investigated by complementary spectroscopic techniques (high-resolution electron-energy-loss, photoemission, and Auger spectroscopy). Bismuth forms an epitaxial monolayer, followed by island formation (Stranski-Krastanov growth mode) covering an average surface area of 40% at a nominal coverage of 4 ML. The (1×2)-symmetry stable structural phase, obtained after annealing at ~220 °C, corresponds to an average nominal Bi coverage of about 0.7 ML, suggesting an atomic geometry different from the epitaxial-continued layer structure. The disposal of Bi atoms in the (1×2) structure should build up an ``open'' layer, as the Ga-related surface exciton quenched in the (1×1) epitaxial monolayer is present in the (1×2) stable phase. The two symmetry phases are characterized by strong absorption features at 1 eV [(1×1)-Bi] and 0.54 eV [(1×2)-Bi], related to interband electronic transitions between Bi-induced electronic states. The major Bi-related occupied electronic levels, present in the valence band of the (1×1)- and (1×2)-Bi layer, have been detected by angle-integrated ultraviolet photoemission spectroscopy. Both the (1×1) and (1×2) phases show a metallic nature, with a low density of electronic states at the Fermi level. Schottky barrier heights of 0.20 and 0.14 eV are estimated for the epitaxial (1×1)- and (1×2)-symmetry stage, respectively, by analyzing the space-charge layer conditions through the study of the dopant-induced free-carrier plasmon in the GaSb substrate.

Using ballistic electron emission microscopy to investigate the metal-vacuum interface

International Nuclear Information System (INIS)

Baykul, M.C.

1993-01-01

This dissertation investigates the possibility of using the ballistic electron microscope (BEEM) to study the metal-vacuum interface. In order to do that, we have designed and built a novel experimental setup which consists of an STM tip from which electrons tunnel into a thin (<60 nm), free-standing metal film in vacuum ambient. When the tunnel bias exceeds the work function of the metal, some small fraction of the tunneling electrons traverses through the film without any energy loss, and emits into the vacuum through the back side of the film. The rate of emission of such ballistic electrons, which is called the collector current, is measured by a channel electron multiplier. One of the major challenges for this investigation was preparing free-standing thin films by the following steps: (a) evaporating Au onto a (100) face of NaCl at room temperature, (b) dissolving the NaCl in a 50-50 mixture of ethyl alcohol and distilled water, and (c) catching the Au film that floats on the surface of the solvent onto a Cu grid. Subsequent annealing increased the grain size, and improved the bonding of the film onto the grid. We have succeeded in observing ballistic electron emission through these free-standing thin films, even though the collector current tended to decay in a time interval of a few tenths of a second. The exact cause of this decay is not known, however we have suggested some possibilities. By ramping the bias voltage from about 0.2 V to about 10.5 V, we find the threshold bias voltage at which the collector current begins. This threshold voltage is an upper limit for the work function of AU. From our data we obtained a value of 5.2 V for this upper limit. We also have plotted the collector current, that was averaged over a scan area of 375 nm x 375 nm, against the tunnel bias. This plot shows that, for this region, the lowest threshold bias voltage for ballistic electron emission is between 3.5 V and 4.5 V

Realisation of a linear electron accelerator. Application to the production of millimetre wavelength waves

International Nuclear Information System (INIS)

Combe, Rene

1956-01-01

In the first part of this research thesis, the author reports the development of a linear electron accelerator with a presentation of charged waveguides which are their main components. He also proposes a recall of the charged waveguide theory, an overview of some experimental guides, a description of the calculation method, and reports the actual realisation of the accelerator waveguide. The apparatus is precisely described, and results obtained during tests are presented. The second part of the thesis addresses the study of millimetre wavelength waves. It reports the study of the electron movement in a sinusoidal inverter, and in a helical inverter (a solenoid in which the electron has a helical trajectory). Then, the author proposes a detailed presentation of electron radiation theory: fundamental wavelength, total radiated power, angular and spectral distribution of radiation. The author finally reports a comparison between radiations obtained with different devices [fr

Free-electron laser multiplex driven by a superconducting linear accelerator.

Science.gov (United States)

Plath, Tim; Amstutz, Philipp; Bödewadt, Jörn; Brenner, Günter; Ekanayake, Nagitha; Faatz, Bart; Hacker, Kirsten; Honkavaara, Katja; Lazzarino, Leslie Lamberto; Lechner, Christoph; Maltezopoulos, Theophilos; Scholz, Matthias; Schreiber, Siegfried; Vogt, Mathias; Zemella, Johann; Laarmann, Tim

2016-09-01

Free-electron lasers (FELs) generate femtosecond XUV and X-ray pulses at peak powers in the gigawatt range. The FEL user facility FLASH at DESY (Hamburg, Germany) is driven by a superconducting linear accelerator with up to 8000 pulses per second. Since 2014, two parallel undulator beamlines, FLASH1 and FLASH2, have been in operation. In addition to the main undulator, the FLASH1 beamline is equipped with an undulator section, sFLASH, dedicated to research and development of fully coherent extreme ultraviolet photon pulses using external seed lasers. In this contribution, the first simultaneous lasing of the three FELs at 13.4 nm, 20 nm and 38.8 nm is presented.

Physically transparent formulation of a free-electron laser in the linear gain regime

International Nuclear Information System (INIS)

Barletta, W.A.; Sessler, A.M.; Yu, L.H.

1992-08-01

The recent 2-dimensional analytic theories of a free-electron laser (FEL) in the linear regime are reformulated in terms of three dimensionless ratios that describe the degree to which the characteristics of the electron beam deviate from the cold beam limit of a beam with no emittance or energy spread. In terms of these ratios, algebraic model equations of a fit that combines features of both of the 2-dimensional analyses are given as a convenient computational tool. Graphs of the FEL gain eigenvalue computed with the combined 2-D formulation illustrate that the gain and the output power at saturation are reduced from the 1-D value, when any of the ratios is larger than unity

Ultra-high vacuum photoelectron linear accelerator

Science.gov (United States)

Yu, David U.L.; Luo, Yan

2013-07-16

An rf linear accelerator for producing an electron beam. The outer wall of the rf cavity of said linear accelerator being perforated to allow gas inside said rf cavity to flow to a pressure chamber surrounding said rf cavity and having means of ultra high vacuum pumping of the cathode of said rf linear accelerator. Said rf linear accelerator is used to accelerate polarized or unpolarized electrons produced by a photocathode, or to accelerate thermally heated electrons produced by a thermionic cathode, or to accelerate rf heated field emission electrons produced by a field emission cathode.

Single-Bunch Instability Driven by the Electron Cloud Effect in the Positron Damping Ring of the International Linear Collider

International Nuclear Information System (INIS)

Pivi, Mauro; Raubenheimer, Tor O.; Ghalam, Ali; Harkay, Katherine; Ohmi, Kazuhito; Wanzenberg, Rainer; Wolski, Andrzej; Zimmermann, Frank

2005-01-01

Collective instabilities caused by the formation of an electron cloud (EC) are a potential limitation to the performances of the damping rings for a future linear collider. In this paper, we present recent simulation results for the electron cloud build-up in damping rings of different circumferences and discuss the single-bunch instabilities driven by the electron cloud

The mechanical and electronic properties of Al/TiC interfaces alloyed by Mg, Zn, Cu, Fe and Ti: First-principles study

International Nuclear Information System (INIS)

Sun, Ting; Wu, Xiaozhi; Wang, Rui; Li, Weiguo

2015-01-01

The adhesion and ductility of (100) and (110) Al/TiC interfaces alloyed by Mg, Zn, Cu, Fe, and Ti have been investigated using first-principles methods. Fe and Ti can enhance the adhesion of (100) and (110) interfaces. Mg and Zn have the opposite effect. Interfacial electronic structures have been created to analyze the changes of the work of adhesion. It is found that more charge is accumulated at interfaces alloyed by Fe and Ti compared with pure Al/TiC. There is also an obvious downward shift in the Fermi energy of Fe, Ti at the interface. Furthermore, the unstable stacking fault energies of the interfaces are calculated; the results demonstrate that the preferred slip direction is the 〈110〉 direction for (100) and (110) Al/TiC. Based on the Rice criterion of ductility, the results predict that Mg, Fe, and Ti are promising candidates for improving the ductility of Al/TiC interfaces. (paper)

Conductance enhancement due to interface magnons in electron-beam evaporated MgO magnetic tunnel junctions with CoFeB free layer deposited at different pressure

Energy Technology Data Exchange (ETDEWEB)

Guo, P.; Yu, G. Q.; Wei, H. X.; Han, X. F., E-mail: jiafengfeng@aphy.iphy.ac.cn, E-mail: xfhan@aphy.iphy.ac.cn [Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Li, D. L.; Feng, J. F., E-mail: jiafengfeng@aphy.iphy.ac.cn, E-mail: xfhan@aphy.iphy.ac.cn [Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); CRANN and School of Physics, Trinity College, Dublin 2 (Ireland); Kurt, H. [CRANN and School of Physics, Trinity College, Dublin 2 (Ireland); Department of Engineering Physics, Istanbul Medeniyet University, 34720 Istanbul (Turkey); Chen, J. Y.; Coey, J. M. D. [CRANN and School of Physics, Trinity College, Dublin 2 (Ireland)

2014-10-21

Electron-beam evaporated MgO-based magnetic tunnel junctions have been fabricated with the CoFeB free layer deposited at Ar pressure from 1 to 4 mTorr, and their tunneling process has been studied as a function of temperature and bias voltage. By changing the growth pressure, the junction dynamic conductance dI/dV, inelastic electron tunneling spectrum d²I/dV², and tunneling magnetoresistance vary with temperature. Moreover, the low-energy magnon cutoff energy E_{{sub C} derived from the conductance versus temperature curve agrees with interface magnon energy obtained directly from the inelastic electron tunneling spectrum, which demonstrates that interface magnons are involved in the electron tunneling process, opening an additional conductance channel and thus enhancing the total conductance.}

Frontiers of controlling energy levels at interfaces

Science.gov (United States)

Koch, Norbert

The alignment of electron energy levels at interfaces between semiconductors, dielectrics, and electrodes determines the function and efficiency of all electronic and optoelectronic devices. Reliable guidelines for predicting the level alignment for a given material combination and methods to adjust the intrinsic energy landscape are needed to enable efficient engineering approaches. These are sufficiently understood for established electronic materials, e.g., Si, but for the increasing number of emerging materials, e.g., organic and 2D semiconductors, perovskites, this is work in progress. The intrinsic level alignment and the underlying mechanisms at interfaces between organic and inorganic semiconductors are discussed first. Next, methods to alter the level alignment are introduced, which all base on proper charge density rearrangement at a heterojunction. As interface modification agents we use molecular electron acceptors and donors, as well as molecular photochromic switches that add a dynamic aspect and allow device multifunctionality. For 2D semiconductors surface transfer doping with molecular acceptors/donors transpires as viable method to locally tune the Fermi-level position in the energy gap. The fundamental electronic properties of a prototypical 1D interface between intrinsic and p-doped 2D semiconductor regions are derived from local (scanning probe) and area-averaged (photoemission) spectroscopy experiments. Future research opportunities for attaining unsurpassed interface control through charge density management are discussed.

FELIX: A high-throughput network approach for interfacing to front end electronics for ATLAS upgrades

CERN Document Server

Anderson, John Thomas; The ATLAS collaboration; Boterenbrood, Hendrik; Chen, Hucheng; Chen, Kai; Drake, Gary; Francis, David; Gorini, Benedetto; Lanni, Francesco; Lehmann Miotto, Giovanna; Levinson, Lorne; Narevicius, Julia; Christian Plessl; Roich, Alexander; Schreuder, Frans Philip; Schumacher, Jorn; Vandelli, Wainer; Vermeulen, Jos; Zhang, Jinlong

2015-01-01

The ATLAS experiment at CERN is planning full deployment of a new unified link technology for connecting detector front end electronics on the timescale of the LHC Run 4 (2025). It is estimated that roughly 8000 GBT (GigaBit Transceiver) links, with transfer rates probably up to 9.6 Gbps, will replace existing links used for readout, detector control and distribution of timing and trigger information. In particular the links used for readout are often detector-specific. Already in Run 3 this technology will be deployed in conjunction with new muon detectors, additional muon first-level triggering electronics and new on-detector and off-detector liquid argon calorimeter electronics to be used for first level triggering. A total of roughly 2000 GBT links or GBT-like links (for connecting to off-detector trigger electronics) will be needed. A new class of devices will need to be developed to interface many GBT links to the rest of the trigger, data-acquisition and detector control systems. In this paper we prese...

Development of an Automatic Frequency Control (AFC) System for RF Electron Linear Accelerators

International Nuclear Information System (INIS)

Cha, Sungsu; Kim, Yujong; Lee, Byeong-No; Joo, Youngwoo; Lee, Soo Min; Lee, Byung Cheol; Cha, Hyungki; Park, Hyung Dal; Lee, Seung Hyun

2015-01-01

In this paper, the design, fabrication, and RF power test of the AFC system for the X-band linac are presented. The main function of the AFC system is automatically matching of the resonance frequency of the accelerating structure and the RF frequency of the magnetron. For the frequency tuning, a fine tuning of 10 kHz is possible by rotating the tuning shaft with a rotation of 0.72 degree per pulse. Therefore, the frequency deviation is about 0.01%, and almost full RF power (2.1 MW) transmission was obtained because the reflected power is minimized. The Radiation Equipment Research Division of the Korea Atomic Energy Research Institute has been developing and upgrading a medical/industrial X-band RF electron linear accelerators. The medical compact RF electron linear accelerator consists of an electron gun, an acceleration tube (accelerating structure), two solenoid magnets, two steering magnets, a magnetron, modulator, an automatic frequency control (AFC) system, and an X-ray generating target. The accelerating structure of the component is composed of oxygen-free high-conductivity copper (OFHC). Therefore, the volume of the structure, hence, its resonance frequency can easily be changeable if the ambient temperature and pressure are changed. If the RF frequency of the 9300 MHz magnetron and the resonance frequency of accelerating structure are not matched, performance of the structure can be degraded. An AFC system is automatically matched with the RF frequency of the magnetron and resonance frequency of the accelerating structure, which obtained a high output power and reliable accelerator operation

Development of an Automatic Frequency Control (AFC) System for RF Electron Linear Accelerators

Energy Technology Data Exchange (ETDEWEB)

Cha, Sungsu; Kim, Yujong; Lee, Byeong-No; Joo, Youngwoo; Lee, Soo Min; Lee, Byung Cheol; Cha, Hyungki [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of); Park, Hyung Dal [Radiation Technology eXcellence, Daejeon (Korea, Republic of); Lee, Seung Hyun [Sungkyunkwan University, Suwon (Korea, Republic of)

2015-10-15

In this paper, the design, fabrication, and RF power test of the AFC system for the X-band linac are presented. The main function of the AFC system is automatically matching of the resonance frequency of the accelerating structure and the RF frequency of the magnetron. For the frequency tuning, a fine tuning of 10 kHz is possible by rotating the tuning shaft with a rotation of 0.72 degree per pulse. Therefore, the frequency deviation is about 0.01%, and almost full RF power (2.1 MW) transmission was obtained because the reflected power is minimized. The Radiation Equipment Research Division of the Korea Atomic Energy Research Institute has been developing and upgrading a medical/industrial X-band RF electron linear accelerators. The medical compact RF electron linear accelerator consists of an electron gun, an acceleration tube (accelerating structure), two solenoid magnets, two steering magnets, a magnetron, modulator, an automatic frequency control (AFC) system, and an X-ray generating target. The accelerating structure of the component is composed of oxygen-free high-conductivity copper (OFHC). Therefore, the volume of the structure, hence, its resonance frequency can easily be changeable if the ambient temperature and pressure are changed. If the RF frequency of the 9300 MHz magnetron and the resonance frequency of accelerating structure are not matched, performance of the structure can be degraded. An AFC system is automatically matched with the RF frequency of the magnetron and resonance frequency of the accelerating structure, which obtained a high output power and reliable accelerator operation.

Interface electronic properties of co-evaporated MAPbI3 on ZnO(0001): In situ X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy study

International Nuclear Information System (INIS)

Zhou, Xianzhong; Li, Xiaoli; Huang, Feng; Zhong, Dingyong; Liu, Yuan

2016-01-01

In this work, the interface electronic properties of ZnO(0001)/CH 3 NH 3 PbI 3 were investigated by both X-ray and ultraviolet photoelectron spectroscopy. The CH 3 NH 3 PbI 3 thin films were grown on single crystalline ZnO(0001) substrate in situ by co-evaporation of PbI 2 and CH 3 NH 3 I at room temperature with various thickness from 1.5 nm to 190 nm. It was found that the conduction band minimum of ZnO lies 0.3 eV below that of CH 3 NH 3 PbI 3 , while the valence band maximum of ZnO lies 2.1 eV below that of CH 3 NH 3 PbI 3 , implying that the electrons can be effectively transported from CH 3 NH 3 PbI 3 to ZnO, and the holes can be blocked in the same time. A PbI 2 rich layer was initially formed at the interface of ZnO(0001)/CH 3 NH 3 PbI 3 during the growth. As a consequence, an interface barrier was built up which may prevent the electron transport at the interface.

RF emittance in a low energy electron linear accelerator

Science.gov (United States)

Sanaye Hajari, Sh.; Haghtalab, S.; Shaker, H.; Kelisani, M. Dayyani

2018-04-01

Transverse beam dynamics of an 8 MeV low current (10 mA) S-band traveling wave electron linear accelerator has been studied and optimized. The main issue is to limit the beam emittance, mainly induced by the transverse RF forces. The linac is being constructed at Institute for Research in Fundamental Science (IPM), Tehran Iran Labeled as Iran's First Linac, nearly all components of this accelerator are designed and constructed within the country. This paper discusses the RF coupler induced field asymmetry and the corresponding emittance at different focusing levels, introduces a detailed beam dynamics design of a solenoid focusing channel aiming to reduce the emittance growth and studies the solenoid misalignment tolerances. In addition it has been demonstrated that a prebuncher cavity with appropriate parameters can help improving the beam quality in the transverse plane.

Calibration of an Electron Linear Accelerator using an acrylic puppet; Calibracion de un Acelerador Lineal de Electrones usando maniqui de acrilico

Energy Technology Data Exchange (ETDEWEB)

Guzman C, C.S.; Picon C, C. [Instituto de Enfermedades Neoplasicas, Departamento de Radioterapia-Servicio de Fisica, Av. Angamos 2520, Lima 34 (Peru)

1998-12-31

The finality of this work is to find the dose for electron beams using acrylic puppets and inter comparing with the measurements in water, found also its respective conversion factor. With base in this, its may be realize interesting measurements for the good performance of a linear accelerator and special clinical treatments in less time. (Author)

Optimisation of electronic interface properties of a-Si:H/c-Si hetero-junction solar cells by wet-chemical surface pre-treatment

Energy Technology Data Exchange (ETDEWEB)

Angermann, H. [Hahn-Meitner-Institut, Abt. Siliziumphotovoltaik, Kekulestrasse 5, D-12489 Berlin (Germany)], E-mail: angermann@hmi.de; Korte, L.; Rappich, J.; Conrad, E.; Sieber, I.; Schmidt, M. [Hahn-Meitner-Institut, Abt. Siliziumphotovoltaik, Kekulestrasse 5, D-12489 Berlin (Germany); Huebener, K.; Hauschild, J. [Freie Universitaet Berlin, FB Physik, Arnimallee 14, 14195 Berlin (Germany)

2008-08-30

The relation between structural imperfections at structured silicon surfaces, energetic distribution of interface state densities, recombination loss at a-Si:H/c-Si interfaces and solar cell characteristics have been intensively investigated using non-destructive, surface sensitive techniques, surface photovoltage (SPV) and photoluminescence (PL) measurements, atomic force microscopy (AFM) and electron microscopy (SEM). Sequences of wet-chemical oxidation and etching steps were optimised with respect to the etching behaviour of Si(111) pyramids. Special wet-chemical smoothing and oxide removal procedures for structured substrates were developed, in order to reduce the preparation-induced surface micro-roughness and density of electronically active defects. H-termination and passivation by wet-chemical oxides were used to inhibit surface contamination and native oxidation during the technological process. We achieved significantly lower micro-roughness, densities of surface states D{sub it}(E) and recombination loss at a-Si:H/c-Si interfaces on wafers with randomly distributed pyramids, compared to conventional pre-treatments. For amorphous-crystalline hetero-junction solar cells (ZnO/a-Si:H/c-Si/BSF/Al), the c-Si surface becomes part of the a-Si:H/c-Si interface, whose recombination activity determines cell performance. With textured substrates, the smoothening procedure results in a significant increase of short circuit current, fill factor and efficiency.

Optimisation of electronic interface properties of a-Si:H/c-Si hetero-junction solar cells by wet-chemical surface pre-treatment

International Nuclear Information System (INIS)

Angermann, H.; Korte, L.; Rappich, J.; Conrad, E.; Sieber, I.; Schmidt, M.; Huebener, K.; Hauschild, J.

2008-01-01

The relation between structural imperfections at structured silicon surfaces, energetic distribution of interface state densities, recombination loss at a-Si:H/c-Si interfaces and solar cell characteristics have been intensively investigated using non-destructive, surface sensitive techniques, surface photovoltage (SPV) and photoluminescence (PL) measurements, atomic force microscopy (AFM) and electron microscopy (SEM). Sequences of wet-chemical oxidation and etching steps were optimised with respect to the etching behaviour of Si(111) pyramids. Special wet-chemical smoothing and oxide removal procedures for structured substrates were developed, in order to reduce the preparation-induced surface micro-roughness and density of electronically active defects. H-termination and passivation by wet-chemical oxides were used to inhibit surface contamination and native oxidation during the technological process. We achieved significantly lower micro-roughness, densities of surface states D it (E) and recombination loss at a-Si:H/c-Si interfaces on wafers with randomly distributed pyramids, compared to conventional pre-treatments. For amorphous-crystalline hetero-junction solar cells (ZnO/a-Si:H/c-Si/BSF/Al), the c-Si surface becomes part of the a-Si:H/c-Si interface, whose recombination activity determines cell performance. With textured substrates, the smoothening procedure results in a significant increase of short circuit current, fill factor and efficiency

SEE induced in SRAM operating in a superconducting electron linear accelerator environment

Science.gov (United States)

Makowski, D.; Mukherjee, Bhaskar; Grecki, M.; Simrock, Stefan

2005-02-01

Strong fields of bremsstrahlung photons and photoneutrons are produced during the operation of high-energy electron linacs. Therefore, a mixed gamma and neutron radiation field dominates the accelerators environment. The gamma radiation induced Total Ionizing Dose (TID) effect manifests the long-term deterioration of the electronic devices operating in accelerator environment. On the other hand, the neutron radiation is responsible for Single Event Effects (SEE) and may cause a temporal loss of functionality of electronic systems. This phenomenon is known as Single Event Upset (SEU). The neutron dose (KERMA) was used to scale the neutron induced SEU in the SRAM chips. Hence, in order to estimate the neutron KERMA conversion factor for Silicon (Si), dedicated calibration experiments using an Americium-Beryllium (241Am/Be) neutron standard source was carried out. Single Event Upset (SEU) influences the short-term operation of SRAM compared to the gamma induced TID effect. We are at present investigating the feasibility of an SRAM based real-time beam-loss monitor for high-energy accelerators utilizing the SEU caused by fast neutrons. This paper highlights the effects of gamma and neutron radiations on Static Random Access Memory (SRAM), placed at selected locations near the Superconducting Linear Accelerator driving the Vacuum UV Free Electron Laser (VUVFEL) of DESY.

Production of high intensity electron bunches for the SLAC Linear Collider

International Nuclear Information System (INIS)

James, M.B.

1987-08-01

This thesis describes the design and performance of a high intensity electron injecfor for the SLAC Linear Collider. Motivation for the collider and the specifications for the injector are discussed. An analytic theory of the bunching and capture of electrons by rf fields is discussed in the limit of low space charge and small signal. The design and performance of SLAC's main injector are described to illustrate a successful application of this theory. The bunching and capture of electrons by rf fields are then discussed in the limit of high space charge and large signal, and a description of the design of the collider injector follows. In the limit of high space charge forces and large rf signals, the beam dynamics are considerably more complex and numerical simulations are required to predict particle motion. A computer code which models the longitudinal dynamics of electrons in the presence of space charge and rf fields is described. The results of the simulations, the resulting collider injector design and the various components which make up the collider injector are described. These include the gun, subharmonic bunchers, traveling-wave buncher and velocity-of-light accelerator section. Finally, the performance of the injector is described including the beam intensity, bunch length, transverse emittance and energy spectrum. While the final operating conditions differ somewaht from the design, the performance of the collider injector is in good agreement with the numerical simulations and meets all of the collider specifications. 28 refs

Scanning Electron Microscope Calibration Using a Multi-Image Non-Linear Minimization Process

Science.gov (United States)

Cui, Le; Marchand, Éric

2015-04-01

A scanning electron microscope (SEM) calibrating approach based on non-linear minimization procedure is presented in this article. A part of this article has been published in IEEE International Conference on Robotics and Automation (ICRA), 2014. . Both the intrinsic parameters and the extrinsic parameters estimations are achieved simultaneously by minimizing the registration error. The proposed approach considers multi-images of a multi-scale calibration pattern view from different positions and orientations. Since the projection geometry of the scanning electron microscope is different from that of a classical optical sensor, the perspective projection model and the parallel projection model are considered and compared with distortion models. Experiments are realized by varying the position and the orientation of a multi-scale chessboard calibration pattern from 300× to 10,000×. The experimental results show the efficiency and the accuracy of this approach.

The high peak current polarized electron source of the Stanford Linear Collider

International Nuclear Information System (INIS)

Schultz, D.; Alley, R.; Aoyagi, H.; Clendenin, J.; Frisch, J.; Garden, C.; Hoyt, E.; Kirby, R.; Klaisner, L.; Kulikov, A.; Mulhollan, G.; Prescott, C.; Saez, P.; Tang, H.; Turner, J.; Woods, M.; Yeremian, D.; Zolotorev, M.

1994-01-01

The Stanford Linear Collider injector requires two 2 ns pulses of 4.5-5.5 x 10 10 electrons, separated by 61 ns at 120 Hz, from its source. Since 1992, these currents have been provided by a polarized electron source based on GaAs photocathodes. A beam polarization of 76±4% has been measured at the end of the 50 GeV linac. At low photocathode quantum efficiencies, and for excitation near threshold, the maximum current delivered by the source is constrained, not by the space charge limit of the gun, but by a ''charge limit'' of the photocathode. The charge limited current is proportional to the photocathode quantum efficiency, but the proportionality varies for different photocathode types. Experience with high polarization strained GaAs photocathodes on a test beamline and on the SLC is presented. (orig.)

Aan der Waals terminated silicon(111) surfaces and interfaces. Preparation, morphology, and electronic properties

International Nuclear Information System (INIS)

Fritsche, R.

2004-01-01

The aim of this thesis is the implementation of the concept of the quasi-van der Waals epitaxy as a new perspective for the integration of reactive and lattice-defect fitted materials into the silicon technology. The experimental characterization of this approach pursues in two subsequent sections. First the chemical and electronic passivation of a three-dimensional substrate (silicon) is studied by means of an ultrathin buffer layer from the material class of the layered-lattice chalcogenides (GaSe). The substrate surface (Si(111):GaSe) modified in this way possesses an inert van der Waals surface and serves in the following as base for the deposition of the against the non-passivated substrate really reactive and lattice-defect fitted materials (II-VI-compound semiconductors and metals) The characterization of the electronic and chemical properties of the surfaces and interfaces pursues with highly resolved photoelectron spectroscopy (SXPS). The results are supplemented by the characterization of the morphology by the diffraction of low-energy electrons (LEED) and the scanning tunnel microscopy (STM)

Understanding Non-Equilibrium Charge Transport and Rectification at Chromophore/Metal Interfaces

Science.gov (United States)

Darancet, Pierre

Understanding non-equilibrium charge and energy transport across nanoscale interfaces is central to developing an intuitive picture of fundamental processes in solar energy conversion applications. In this talk, I will discuss our theoretical studies of finite-bias transport at organic/metal interfaces. First, I will show how the finite-bias electronic structure of such systems can be quantitatively described using density functional theory in conjunction with simple models of non-local correlations and bias-induced Stark effects.. Using these methods, I will discuss the conditions of emergence of highly non-linear current-voltage characteristics in bilayers made of prototypical organic materials, and their implications in the context of hole- and electron-blocking layers in organic photovoltaic. In particular, I will show how the use of strongly-hybridized, fullerene-coated metallic surfaces as electrodes is a viable route to maximizing the diodic behavior and electrical functionality of molecular components. The submitted manuscript has been created by UChicago Argonne, LLC, Operator of Argonne National Laboratory (Argonne). Argonne, a U.S. Department of Energy Office of Science laboratory, is operated under Contract No. DE-AC02-06CH11357.

Electronic torsional sound in linear atomic chains: Chemical energy transport at 1000 km/s

Energy Technology Data Exchange (ETDEWEB)

Kurnosov, Arkady A.; Rubtsov, Igor V.; Maksymov, Andrii O.; Burin, Alexander L., E-mail: aburin@tulane.edu [Department of Chemistry, Tulane University, New Orleans, Louisiana 70118 (United States)

2016-07-21

We investigate entirely electronic torsional vibrational modes in linear cumulene chains. The carbon nuclei of a cumulene are positioned along the primary axis so that they can participate only in the transverse and longitudinal motions. However, the interatomic electronic clouds behave as a torsion spring with remarkable torsional stiffness. The collective dynamics of these clouds can be described in terms of electronic vibrational quanta, which we name torsitons. It is shown that the group velocity of the wavepacket of torsitons is much higher than the typical speed of sound, because of the small mass of participating electrons compared to the atomic mass. For the same reason, the maximum energy of the torsitons in cumulenes is as high as a few electronvolts, while the minimum possible energy is evaluated as a few hundred wavenumbers and this minimum is associated with asymmetry of zero point atomic vibrations. Theory predictions are consistent with the time-dependent density functional theory calculations. Molecular systems for experimental evaluation of the predictions are proposed.

Electronic torsional sound in linear atomic chains: Chemical energy transport at 1000 km/s

Science.gov (United States)

Kurnosov, Arkady A.; Rubtsov, Igor V.; Maksymov, Andrii O.; Burin, Alexander L.

2016-07-01

We investigate entirely electronic torsional vibrational modes in linear cumulene chains. The carbon nuclei of a cumulene are positioned along the primary axis so that they can participate only in the transverse and longitudinal motions. However, the interatomic electronic clouds behave as a torsion spring with remarkable torsional stiffness. The collective dynamics of these clouds can be described in terms of electronic vibrational quanta, which we name torsitons. It is shown that the group velocity of the wavepacket of torsitons is much higher than the typical speed of sound, because of the small mass of participating electrons compared to the atomic mass. For the same reason, the maximum energy of the torsitons in cumulenes is as high as a few electronvolts, while the minimum possible energy is evaluated as a few hundred wavenumbers and this minimum is associated with asymmetry of zero point atomic vibrations. Theory predictions are consistent with the time-dependent density functional theory calculations. Molecular systems for experimental evaluation of the predictions are proposed.

A dose-response curve for biodosimetry from a 6 MV electron linear accelerator

Energy Technology Data Exchange (ETDEWEB)

Lemos-Pinto, M.M.P.; Cadena, M.; Santos, N.; Fernandes, T.S.; Borges, E.; Amaral, A., E-mail: marcelazoo@yahoo.com.br [Universidade Federal de Pernambuco (UFPE), Recife, PE (Brazil). Departamento de Energia Nuclear

2015-10-15

Biological dosimetry (biodosimetry) is based on the investigation of radiation-induced biological effects (biomarkers), mainly dicentric chromosomes, in order to correlate them with radiation dose. To interpret the dicentric score in terms of absorbed dose, a calibration curve is needed. Each curve should be constructed with respect to basic physical parameters, such as the type of ionizing radiation characterized by low or high linear energy transfer (LET) and dose rate. This study was designed to obtain dose calibration curves by scoring of dicentric chromosomes in peripheral blood lymphocytes irradiated in vitro with a 6 MV electron linear accelerator (Mevatron M, Siemens, USA). Two software programs, CABAS (Chromosomal Aberration Calculation Software) and Dose Estimate, were used to generate the curve. The two software programs are discussed; the results obtained were compared with each other and with other published low LET radiation curves. Both software programs resulted in identical linear and quadratic terms for the curve presented here, which was in good agreement with published curves for similar radiation quality and dose rates. (author)

A dose-response curve for biodosimetry from a 6 MV electron linear accelerator.

Science.gov (United States)

Lemos-Pinto, M M P; Cadena, M; Santos, N; Fernandes, T S; Borges, E; Amaral, A

2015-10-01

Biological dosimetry (biodosimetry) is based on the investigation of radiation-induced biological effects (biomarkers), mainly dicentric chromosomes, in order to correlate them with radiation dose. To interpret the dicentric score in terms of absorbed dose, a calibration curve is needed. Each curve should be constructed with respect to basic physical parameters, such as the type of ionizing radiation characterized by low or high linear energy transfer (LET) and dose rate. This study was designed to obtain dose calibration curves by scoring of dicentric chromosomes in peripheral blood lymphocytes irradiated in vitro with a 6 MV electron linear accelerator (Mevatron M, Siemens, USA). Two software programs, CABAS (Chromosomal Aberration Calculation Software) and Dose Estimate, were used to generate the curve. The two software programs are discussed; the results obtained were compared with each other and with other published low LET radiation curves. Both software programs resulted in identical linear and quadratic terms for the curve presented here, which was in good agreement with published curves for similar radiation quality and dose rates.

Fast Crystallization and improved Stability of Perovskite Solar Cells with Zn 2 SnO 4 Electron Transporting Layer: Interface Matters

KAUST Repository

Bera, Ashok

2015-12-03

Here we report that mesoporous ternary oxide Zn2SnO4 can significantly promotes the crystallization of hybrid perovskite layers and serves as an efficient electron transporting material in perovskite solar cells. Such devices exhibit an energy conversion efficiency of 13.34%, which is even higher than that achieved with the commonly used TiO2 in the similar experimental conditions (9.1%). Simple one-step spin coating of CH3NH3PbI3−xClx on Zn2SnO4 is found to lead to rapidly crystalized bilayer perovskite structure without any solvent engineering. Furthermore, ultrafast transient absorption measurement reveals efficient charge transfer at the Zn2SnO4/perovskite interface. Most importantly, solar cells with Zn2SnO4 as the electron-transporting material exhibit negligible electrical hysteresis and exceptionally high stability without encapsulation for over one month. Besides underscoring Zn2SnO4 as a highly promising electron transporting material for perovskite solar cells, our results demonstrate the significant role of interfaces on improving the perovskite crystallization and photovoltaic performance.

Design of thermal neutron beam based on an electron linear accelerator for BNCT.

Science.gov (United States)

Zolfaghari, Mona; Sedaghatizadeh, Mahmood

2016-12-01

An electron linear accelerator (Linac) can be used for boron neutron capture therapy (BNCT) by producing thermal neutron flux. In this study, we used a Varian 2300 C/D Linac and MCNPX.2.6.0 code to simulate an electron-photoneutron source for use in BNCT. In order to decelerate the produced fast neutrons from the photoneutron source, which optimize the thermal neutron flux, a beam-shaping assembly (BSA) was simulated. After simulations, a thermal neutron flux with sharp peak at the beam exit was obtained in the order of 3.09×10 8 n/cm 2 s and 6.19×10 8 n/cm 2 s for uranium and enriched uranium (10%) as electron-photoneutron sources respectively. Also, in-phantom dose analysis indicates that the simulated thermal neutron beam can be used for treatment of shallow skin melanoma in time of about 85.4 and 43.6min for uranium and enriched uranium (10%) respectively. Copyright © 2016. Published by Elsevier Ltd.

x-y-recording in transmission electron microscopy. A versatile and inexpensive interface to personal computers with application to stereology.

Science.gov (United States)

Rickmann, M; Siklós, L; Joó, F; Wolff, J R

1990-09-01

An interface for IBM XT/AT-compatible computers is described which has been designed to read the actual specimen stage position of electron microscopes. The complete system consists of (i) optical incremental encoders attached to the x- and y-stage drivers of the microscope, (ii) two keypads for operator input, (iii) an interface card fitted to the bus of the personal computer, (iv) a standard configuration IBM XT (or compatible) personal computer optionally equipped with a (v) HP Graphic Language controllable colour plotter. The small size of the encoders and their connection to the stage drivers by simple ribbed belts allows an easy adaptation of the system to most electron microscopes. Operation of the interface card itself is supported by any high-level language available for personal computers. By the modular concept of these languages, the system can be customized to various applications, and no computer expertise is needed for actual operation. The present configuration offers an inexpensive attachment, which covers a wide range of applications from a simple notebook to high-resolution (200-nm) mapping of tissue. Since section coordinates can be processed in real-time, stereological estimations can be derived directly "on microscope". This is exemplified by an application in which particle numbers were determined by the disector method.

Gold Nanofilm Redox Catalysis for Oxygen Reduction at Soft Interfaces

International Nuclear Information System (INIS)

Smirnov, Evgeny; Peljo, Pekka; Scanlon, Micheál D.; Girault, Hubert H.

2016-01-01

ABSTRACT: Functionalization of a soft or liquid-liquid interface by a one gold nanoparticle thick “nanofilm” provides a conductive pathway to facilitate interfacial electron transfer from a lipophilic electron donor to a hydrophilic electron acceptor in a process known as interfacial redox catalysis. The gold nanoparticles in the nanofilm are charged by Fermi level equilibration with the lipophilic electron donor and act as an interfacial reservoir of electrons. Additional thermodynamic driving force can be provided by electrochemically polarising the interface. Using these principles, the biphasic reduction of oxygen by a lipophilic electron donor, decamethylferrocene, dissolved in α,α,α-trifluorotoluene was catalysed at a gold nanoparticle nanofilm modified water-oil interface. A recently developed microinjection technique was utilised to modify the interface reproducibly with the mirror-like gold nanoparticle nanofilm, while the oxidised electron donor species and the reduction product, hydrogen peroxide, were detected by ion transfer voltammetry and UV/vis spectroscopy, respectively. Metallization of the soft interface allowed the biphasic oxygen reduction reaction to proceed via an alternative mechanism with enhanced kinetics and at a significantly lower overpotential in comparison to a bare soft interface. Weaker lipophilic reductants, such as ferrocene, were capable of charging the interfacial gold nanoparticle nanofilm but did not have sufficient thermodynamic driving force to significantly elicit biphasic oxygen reduction.

Simulation of Magnetic Phenomena at Realistic Interfaces

KAUST Repository

Grytsyuk, Sergiy

2016-02-04

In modern technology exciting developments are related to the ability to understand and control interfaces. Particularly, magnetic interfaces revealing spindependent electron transport are of great interest for modern spintronic devices, such as random access memories and logic devices. From the technological point of view, spintronic devices based on magnetic interfaces enable manipulation of the magnetism via an electric field. Such ability is a result of the different quantum effects arising from the magnetic interfaces (for example, spin transfer torque or spin-orbit torque) and it can reduce the energy consumption as compared to the traditional semiconductor electronic devices. Despite many appealing characteristics of these materials, fundamental understanding of their microscopic properties and related phenomena needs to be established by thorough investigation. In this work we implement first principles calculations in order to study the structural, electric, and magnetic properties as well as related phenomena of two types of interfaces with large potential in spintronic applications: 1) interfaces between antiferromagnetic 3d-metal-oxides and ferromagnetic 3d-metals and 2) interfaces between non-magnetic 5d(4d)- and ferromagnetic 3d-metals. A major difficulty in studying such interfaces theoretically is the typically large lattice mismatch. By employing supercells with Moir e patterns, we eliminate the artificial strain that leads to doubtful results and are able to describe the dependence of the atomic density at the interfaces on the component materials and their thicknesses. After establishing understanding about the interface structures, we investigate the electronic and magnetic properties. A Moir e supercell with transition layer is found to reproduce the main experimental findings and thus turns out to be the appropriate model for simulating magnetic misfit interfaces. In addition, we systematically study the magnetic anisotropy and Rashba band

Study of electron groupings in the Saclay linear accelerator; Etude du groupement des electrons dans l'accelerateur lineaire de Saclay

Energy Technology Data Exchange (ETDEWEB)

Bergere, R; Veyssiere, A; Beil, H [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

1965-07-01

The classical theory of the linear accelerator buncher does not fit the experimental measurements of the shape of the bunch of electrons performed at Saclay by the method of the energy spectrum. If the spurious effect of the mode converter at the input of the linac is taken into account the theory can fit the experimental results and also explain the variations of the phase of the bunch on the accelerating sine wave. (authors) [French] Une etude classique du groupeur en tete de l'Accelerateur Lineaire de Saclav conduit a des resultats incompatibles avec les resultats experimentaux obtenus sur le groupement des electrons par l'etude du spectre des frequences rayonnees par le faisceau d'electrons ou par l'etude des spectres en energie. Par contre si l'effet parasite du convertisseur de mode a l'entree de l'accelerateur est pris en consideration les resultats theoriques coincident bien avec les resultats experimentaux et permettent en outre d'expliquer les variations du calage en phase des paquets elementaires d'electrons. (auteurs)

Increased-accuracy numerical modeling of electron-optical systems with space-charge

International Nuclear Information System (INIS)

Sveshnikov, V.

2011-01-01

This paper presents a method for improving the accuracy of space-charge computation for electron-optical systems. The method proposes to divide the computational region into two parts: a near-cathode region in which analytical solutions are used and a basic one in which numerical methods compute the field distribution and trace electron ray paths. A numerical method is used for calculating the potential along the interface, which involves solving a non-linear equation. Preliminary results illustrating the improvement of accuracy and the convergence of the method for a simple test example are presented.

Validating the Technology Acceptance Model in the Context of the Laboratory Information System-Electronic Health Record Interface System

Science.gov (United States)

Aquino, Cesar A.

2014-01-01

This study represents a research validating the efficacy of Davis' Technology Acceptance Model (TAM) by pairing it with the Organizational Change Readiness Theory (OCRT) to develop another extension to the TAM, using the medical Laboratory Information Systems (LIS)--Electronic Health Records (EHR) interface as the medium. The TAM posits that it is…

Crystal interface and high-resolution electron microscopy—the best partner

Directory of Open Access Journals (Sweden)

H Ichinose

2000-01-01

Full Text Available Several contributions of HRTEM on the interface science are reviewed in chronological order. The first contribution of HRTEM is the observation of gold (113Σ°11 boundary, giving experimental proof of the CSL model. An observation of the asymmetric (112Σ°3 boundary follows. A SiC grain boundary is effectively assessed not by the density of CSL point but the number of dangling bonds in the boundary. A ZnO/Pd interface provides an example that a misfit dislocation does not necessarily accommodate the lattice mismatch. Segregated interface shows characteristic HRTEM image contrast, suggesting change in atomic bonding. An atomic height step in the semiconductor hetero interface is observed by the Chemical Lattice Image technique. In the diamond grain boundary a dangling bond may not elevate the boundary energy, being contradictory of the least dangling bond rule. Super-high resolution of the HVHRTEM enable us to determine atomic species in the grain boundary. Combined use of HRTEM and EELSE allows us to discuss the correlation between atomic structure and nature of the corresponding interface. It is not exaggeration to say that modern interface science does not exist witout HRTEM. On the other hand, many complicated interfaces found by HRTEM remained as unaswered questions. An innovative structural model is requested to appear on the scene.

Thermal interface material characterization for cryogenic electronic packaging solutions

Science.gov (United States)

Dillon, A.; McCusker, K.; Van Dyke, J.; Isler, B.; Christiansen, M.

2017-12-01

As applications of superconducting logic technologies continue to grow, the need for efficient and reliable cryogenic packaging becomes crucial to development and testing. A trade study of materials was done to develop a practical understanding of the properties of interface materials around 4 K. While literature exists for varying interface tests, discrepancies are found in the reported performance of different materials and in the ranges of applied force in which they are optimal. In considering applications extending from top cooling a silicon chip to clamping a heat sink, a range of forces from approximately 44 N to approximately 445 N was chosen for testing different interface materials. For each range of forces a single material was identified to optimize the thermal conductance of the joint. Of the tested interfaces, indium foil clamped at approximately 445 N showed the highest thermal conductance. Results are presented from these characterizations and useful methodologies for efficient testing are defined.

The molecule-metal interface

CERN Document Server

Koch, Norbert; Wee, Andrew Thye Shen

2013-01-01

Reviewing recent progress in the fundamental understanding of the molecule-metal interface, this useful addition to the literature focuses on experimental studies and introduces the latest analytical techniques as applied to this interface.The first part covers basic theory and initial principle studies, while the second part introduces readers to photoemission, STM, and synchrotron techniques to examine the atomic structure of the interfaces. The third part presents photoelectron spectroscopy, high-resolution UV photoelectron spectroscopy and electron spin resonance to study the electroni

Electron thermal effect on linear and nonlinear coupled Shukla-Varma and convective cell modes in dust-contaminated magnetoplasma

Science.gov (United States)

Masood, W.; Mirza, Arshad M.

2010-11-01

Linear and nonlinear properties of coupled Shukla-Varma (SV) and convective cell modes in the presence of electron thermal effects are studied in a nonuniform magnetoplasma composed of electrons, ions, and extremely massive and negatively charged immobile dust grains. In the linear case, the modified dispersion relation is given and, in the nonlinear case, stationary solutions of the nonlinear equations that govern the dynamics of coupled SV and convective cell modes are obtained. It is found that electrostatic dipolar and vortex street type solutions can appear in such a plasma. The relevance of the present investigation with regard to the Earth's mesosphere as well as in ionospheric plasmas is also pointed out.

Electron thermal effect on linear and nonlinear coupled Shukla-Varma and convective cell modes in dust-contaminated magnetoplasma

International Nuclear Information System (INIS)

Masood, W.; Mirza, Arshad M.

2010-01-01

Linear and nonlinear properties of coupled Shukla-Varma (SV) and convective cell modes in the presence of electron thermal effects are studied in a nonuniform magnetoplasma composed of electrons, ions, and extremely massive and negatively charged immobile dust grains. In the linear case, the modified dispersion relation is given and, in the nonlinear case, stationary solutions of the nonlinear equations that govern the dynamics of coupled SV and convective cell modes are obtained. It is found that electrostatic dipolar and vortex street type solutions can appear in such a plasma. The relevance of the present investigation with regard to the Earth's mesosphere as well as in ionospheric plasmas is also pointed out.

Improved linearity in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with nonlinear polarization dielectric

International Nuclear Information System (INIS)

Gao, Tao; Xu, Ruimin; Kong, Yuechan; Zhou, Jianjun; Kong, Cen; Dong, Xun; Chen, Tangsheng

2015-01-01

We demonstrate highly improved linearity in a nonlinear ferroelectric of Pb(Zr 0.52 Ti 0.48 )-gated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT). Distinct double-hump feature in the transconductance-gate voltage (g m -V g ) curve is observed, yielding remarkable enhancement in gate voltage swing as compared to MIS-HEMT with conventional linear gate dielectric. By incorporating the ferroelectric polarization into a self-consistent calculation, it is disclosed that in addition to the common hump corresponding to the onset of electron accumulation, the second hump at high current level is originated from the nonlinear polar nature of ferroelectric, which enhances the gate capacitance by increasing equivalent dielectric constant nonlinearly. This work paves a way for design of high linearity GaN MIS-HEMT by exploiting the nonlinear properties of dielectric

Structural, electronic, linear, and nonlinear optical properties of ZnCdTe{sub 2} chalcopyrite

Energy Technology Data Exchange (ETDEWEB)

Ouahrani, Tarik [Laboratoire de Physique Theorique, Universite de Tlemcen, B.P. 230, Tlemcen 13000 (Algeria); Reshak, Ali H. [Institute of Physical Biology, South Bohemia University, Nove Hrady 37333 (Czech Republic); School of Microelectronic Engineering, University of Malaysia Perlis (UniMAP), Block A, Kompleks Pusat Pengajian, 02600 Arau Jejawi, Perlis (Malaysia); Khenata, R. [Laboratoire de Physique Quantique et de Modelisation Mathematique, Universite de Mascara, Mascara 29000 (Algeria); Department of Physics and Astronomy, Faculty of Science, King Saud University, P.O. Box 2455, Riyadh 11451 (Saudi Arabia); Baltache, H.; Amrani, B. [Laboratoire de Physique Quantique et de Modelisation Mathematique, Universite de Mascara, Mascara 29000 (Algeria); Bouhemadou, A. [Department of Physics and Astronomy, Faculty of Science, King Saud University, P.O. Box 2455, Riyadh 11451 (Saudi Arabia); Faculty of Sciences, Department of Physics, University of Setif, Setif 19000 (Algeria)

2011-03-15

We report results of first-principles density functional calculations using the full-potential linearized augmented plane wave method. The generalized gradient approximation (GGA) and the Engel-Vosko-GGA (EV-GGA) formalism were used for the exchange-correlation energy to calculate the structural, electronic, linear, and nonlinear optical properties of the chalcopyrite ZnCdTe{sub 2} compound. The valence band maximum and the conduction band minimum are located at the {gamma}-point, resulting in a direct band gap of about 0.71 eV for GGA and 1.29 eV for EV-GGA. The results of bulk properties, such as lattice parameters (a, c, and u), bulk modulus B, and its pressure derivative B' are evaluated. The optical properties of this compound, namely the real and the imaginary parts of the dielectric function, reflectivity, and refractive index, show a considerable anisotropy as a consequence ZnCdTe{sub 2} posseses a strong birefringence. In addition, the extinction coefficient, the electron energy loss function, and the nonlinear susceptibility are calculated and their spectra are analyzed. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)