The passive oxide films growth on 316L stainless steel in borate buffer solution measured by real-time spectroscopic ellipsometry

Energy Technology Data Exchange (ETDEWEB)

Xu, Haisong; Wang, Lu; Sun, Dongbai [National Center for Materials Service Safety (NCMS), University of Science and Technology Beijing, Beijing 100083 (China); Yu, Hongying, E-mail: hyyu@ustb.edu.cn [Institute of Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083 (China)

2015-10-01

Highlights: • The optical properties of passive oxide films on 316L stainless steel were studied. • The thickness of the oxide films (1.5–2.6 nm) increased linearly with the potentials. • The growth of passive film followed high electric field ion conduction model. • Selective solubility of oxide induced compositional change of passive film. - Abstract: Passive film growth on 316L stainless steel was investigated in borate buffer electrolyte (pH = 9.1) by real-time spectroscopic ellipsometry (SE) and the composition was estimated by X-ray photoelectron spectroscopy (XPS). Anodic passivation of 316L SS was carried out in the potential range from 0 V{sub SCE} to 0.9 V{sub SCE}, after potentiostatic polarization for 1800s, the current density decayed from 10{sup −2} A cm{sup −2} to 10{sup −6} A cm{sup −2}. The passive film thickness was simulated from Frenel and Drude reflection equations, the average complex refractive index was assumed to be N = 2.3 − j0.445. The estimated thickness increased linearly with potential from 1.5 nm at 0 V to 2.6 nm at 0.8 V. The growth of passive film followed high electric field ion conduction model. The passive film mainly contained the oxide/hydroxide of iron and chromium. The selective solubility of oxide in passive film explained the change of iron and chromium content at different potentials. Few nickel and molybdenum also contributed to the passive film with a constant content.

Physical phenomena stipulating nucleus formation, growth and structure films

Energy Technology Data Exchange (ETDEWEB)

Aleksandrov, L N [AN SSSR, Novosibirsk. Inst. Fiziki Poluprovodnikov

1975-03-01

This review is concerned with the physical phenomena responsible for the nucleation, growth and structure of films. Emphasis is placed on the study of films of solid-metal systems, semiconductors (In, As, Cd, Se, CdS), and dielectrics. The following problems are discussed in the paper: general regularities of the thermodynamics and kinetics of film formation, methods of obtaining a solid film, the process of film formation, the rate of growth of individual grains. The critical film thickness and its measurement are also considered. The results of investigating the process of formation of mono- and polycrystalline films are discussed. It is concluded, on the basis of studies into the relaxation processes accompanying the growth of films, that an insight into these processes will permits improving film properties.

Thin film growth into the ion track structures in polyimide by atomic layer deposition

Science.gov (United States)

Mättö, L.; Malm, J.; Arstila, K.; Sajavaara, T.

2017-09-01

High-aspect ratio porous structures with controllable pore diameters and without a stiff substrate can be fabricated using the ion track technique. Atomic layer deposition is an ideal technique for depositing thin films and functional surfaces on complicated 3D structures due to the high conformality of the films. In this work, we studied Al2O3 and TiO2 films grown by ALD on pristine polyimide (Kapton HN) membranes as well as polyimide membranes etched in sodium hypochlorite (NaOCl) and boric acid (BO3) solution by means of RBS, PIXE, SEM-EDX and helium ion microcopy (HIM). The focus was on the first ALD growth cycles. The areal density of Al2O3 film in the 400 cycle sample was determined to be 51 ± 3 × 1016 at./cm2, corresponding to the thickness of 55 ± 3 nm. Furthermore, the growth per cycle was 1.4 Å/cycle. The growth is highly linear from the first cycles. In the case of TiO2, the growth per cycle is clearly slower during the first 200 cycles but then it increases significantly. The growth rate based on RBS measurements is 0.24 Å/cycle from 3 to 200 cycles and then 0.6 Å/cycle between 200 and 400 cycles. The final areal density of TiO2 film after 400 cycles is 148 ± 3 × 1015 at./cm2 which corresponds to the thickness of 17.4 ± 0.4 nm. The modification of the polyimide surface by etching prior to the deposition did not have an effect on the Al2O3 and TiO2 growth.

Growth and characterization of magnetite-maghemite thin films by the dip coating method

International Nuclear Information System (INIS)

Velásquez, A. A.; Arnedo, A.

2017-01-01

We present the process of growth and characterization of magnetite-maghemite thin films obtained by the dip coating method. The thin films were deposited on glass substrates, using a ferrofluid of nanostructured magnetite-maghemite particles as precursor solution. During the growth of the films the following parameters were controlled: number of dips of the substrates, dip velocity of the substrates and drying times. The films were characterized by Atomic Force Microscopy, Scanning Elelectron Microscopy, four-point method for resistance measurement, Room Temperature Mössbauer Spectroscopy and Hall effect. Mössbauer measurements showed the presence of a sextet attributed to maghemite (γ-Fe_2O_3) and two doublets attributed to superparamagnetic magnetite (Fe_3O_4), indicating a distribution of oxidation states of the iron as well as a particle size distribution of the magnetic phases in the films. Atomic force microscopy measurements showed that the films cover quasi uniformly the substrates, existing in them some pores with sub-micron size. Scanning Electron Microscopy measurements showed a uniform structure in the films, with spherical particles with size around 10 nm. Voltage versus current measurements showed an ohmic response of the films for currents between 0 and 100 nA. On the other hand, Hall effect measurements showed a nonlinear response of the Hall voltage with the magnetic flux density applied perpendicular to the plane of the films, however the response is fairly linear for magnetic flux densities between 0.15 and 0.35 T approximately. The results suggest that the films are promising for application as magnetic flux density sensors.

A study on linear and non-linear optical constants of Rhodamine B thin film deposited on FTO glass

Science.gov (United States)

Yahia, I. S.; Jilani, Asim; Abutalib, M. M.; AlFaify, S.; Shkir, M.; Abdel-wahab, M. Sh.; Al-Ghamdi, Attieh A.; El-Naggar, A. M.

2016-06-01

The aim of this research was to fabricate/deposit the good quality thin film of Rhodamine B dye on fluorine doped tin oxide glass substrate by the low cost spin coating technique and study their linear and nonlinear optical parameters. The thickness of the thin film was measured about 300 nm with alpha step system. The transmittance of the fabricated thin film was found to be above 75% corresponding to the fluorine doped tin oxide layer. The structural analysis was performed with X-rays diffraction spectroscopy. Atomic force microscope showed the topographic image of deposited thin film. Linear optical constant like absorption coefficient, band gap, and extinction index was calculated. The dielectric constant was calculated to know the optical response of Rhodamine B dye over fluorine doped tin oxide substrate. The nonlinear optical constant like linear optical susceptibility χ(1), nonlinear optical susceptibility χ(3), nonlinear refractive index (n2) were calculated by spectroscopic method. This method has advantage over the experimental method like Z-Scan for organic dye base semiconductors for future advance optoelectronics applications like dye synthesis solar cell.

Improved interface growth and enhanced flux pinning in YBCO films deposited on an advanced IBAD-MgO based template

Science.gov (United States)

Khan, M. Z.; Zhao, Y.; Wu, X.; Malmivirta, M.; Huhtinen, H.; Paturi, P.

2018-02-01

The growth mechanism is studied from the flux pinning point of view in small-scale YBa2Cu3O6+x (YBCO) thin films deposited on a polycrystalline hastelloy with advanced IBAD-MgO based buffer layer architecture. When compared the situation with YBCO films grown on single crystal substrates, the most critical issues that affect the suitable defect formation and thus the optimal vortex pinning landscape, have been studied as a function of the growth temperature and the film thickness evolution. We can conclude that the best critical current property in a wide applied magnetic field range is observed in films grown at relatively low temperature and having intermediate thickness. These phenomena are linked to the combination of the improved interface growth, to the film thickness related crystalline relaxation and to the formation of linear array of edge dislocations that forms the low-angle grain boundaries through the entire film thickness and thus improve the vortex pinning properties. Hence, the optimized buffer layer structure proved to be particularly suitable for new coated conductor solutions.

The effects of oestrogens on linear bone growth

DEFF Research Database (Denmark)

Juul, A

2001-01-01

Regulation of linear bone growth in children and adolescents comprises a complex interaction of hormones and growth factors. Growth hormone (GH) is considered to be the key hormone regulator of linear growth in childhood. The pubertal increase in growth velocity associated with GH has traditionally...... been attributed to testicular androgen secretion in boys, and to oestrogens or adrenal androgen secretion in girls. Research data indicating that oestrogen may be the principal hormone stimulating the pubertal growth spurt in boys as well as girls is reviewed. Such an action is mediated by oestrogen...... female growth spurt despite lack of androgen action. Oestrogens may also influence linear bone growth indirectly via modulation of the GH-insulin-like growth factor-I (IGF-I) axis. Thus, ER blockade diminishes endogenous GH secretion, androgen receptor (AR) blockade increases GH secretion in peripubertal...

Optical band gap demarcation around 2.15 eV depending on preferred orientation growth in red HgI{sub 2} films

Energy Technology Data Exchange (ETDEWEB)

Tyagi, Pankaj, E-mail: pankajtyagicicdu@gmail.com

2017-04-01

Thermally evaporated stoichiometric films of red HgI{sub 2} show preferred orientation growth with either (102) or (002) orientation. The as grown films shows a change from one preferred orientation to another depending on their thickness, open-air heat-treatment and in-situ heat treatment of films. The in-situ heat-treatment of thermally evaporated stoichiometric films of red HgI{sub 2} with preferred growth of (102) orientation shows a gradual linear decrease in film thickness with in-situ heat-treatment temperature. On in-situ heat-treatment above 80 °C, it is found that HgI{sub 2} films become thinner than 900 nm, which are otherwise difficult to grow due to high vapor pressure of HgI{sub 2}. For these films the preferred orientation also changed from (102) to (002). The optical band gap (E{sub g}) also found to increase linearly with in-situ heat-treatment temperature. It is interesting to note that in-situ heat-treated films having (002) orientation had higher values of optical band gap than (102) orientation films. On combining these results with those of as grown and open-air heat-treated red HgI{sub 2} films reported in the literature, it is evident that there exists an optical band gap demarcation around 2.15 eV for red HgI{sub 2} thin films depending on their preferred orientation growth. Films with (102) orientation are found to have optical band gap less than 2.15 eV and those with (002) orientation are found to have optical band gap more than 2.15 eV. This is irrespective of the physical mean of obtaining the preferred orientation. The preferred orientation can be achieved by either physical means such as growing films with higher thickness, heat-treating them for short duration in open air or heat-treating them in-situ.

Growth and characterization of magnetite-maghemite thin films by the dip coating method

Energy Technology Data Exchange (ETDEWEB)

Velásquez, A. A., E-mail: avelas26@eafit.edu.edu.co; Arnedo, A. [Universidad EAFIT, Grupo de Electromagnetismo Aplicado (Colombia)

2017-11-15

We present the process of growth and characterization of magnetite-maghemite thin films obtained by the dip coating method. The thin films were deposited on glass substrates, using a ferrofluid of nanostructured magnetite-maghemite particles as precursor solution. During the growth of the films the following parameters were controlled: number of dips of the substrates, dip velocity of the substrates and drying times. The films were characterized by Atomic Force Microscopy, Scanning Elelectron Microscopy, four-point method for resistance measurement, Room Temperature Mössbauer Spectroscopy and Hall effect. Mössbauer measurements showed the presence of a sextet attributed to maghemite (γ-Fe{sub 2}O{sub 3}) and two doublets attributed to superparamagnetic magnetite (Fe{sub 3}O{sub 4}), indicating a distribution of oxidation states of the iron as well as a particle size distribution of the magnetic phases in the films. Atomic force microscopy measurements showed that the films cover quasi uniformly the substrates, existing in them some pores with sub-micron size. Scanning Electron Microscopy measurements showed a uniform structure in the films, with spherical particles with size around 10 nm. Voltage versus current measurements showed an ohmic response of the films for currents between 0 and 100 nA. On the other hand, Hall effect measurements showed a nonlinear response of the Hall voltage with the magnetic flux density applied perpendicular to the plane of the films, however the response is fairly linear for magnetic flux densities between 0.15 and 0.35 T approximately. The results suggest that the films are promising for application as magnetic flux density sensors.

Quantum and classical contributions to linear magnetoresistance in topological insulator thin films

International Nuclear Information System (INIS)

Singh, Sourabh; Gopal, R. K.; Sarkar, Jit; Mitra, Chiranjib

2016-01-01

Three dimensional topological insulators possess backscattering immune relativistic Dirac fermions on their surface due to nontrivial topology of the bulk band structure. Both metallic and bulk insulating topological insulators exhibit weak-antilocalization in the low magnetic field and linear like magnetoresistance in higher fields. We explore the linear magnetoresistance in bulk insulating topological insulator Bi 2-x Sb x Te 3-y Se y thin films grown by pulsed laser deposition technique. Thin films of Bi 2-x Sb x Te 3-y Se y were found to be insulating in nature, which conclusively establishes the origin of linear magnetoresistance from surface Dirac states. The films were thoroughly characterized for their crystallinity and composition and then subjected to transport measurements. We present a careful analysis taking into considerations all the existing models of linear magnetoresistance. We comprehend that the competition between classical and quantum contributions to magnetoresistance results in linear magnetoresistance in high fields. We observe that the cross-over field decreases with increasing temperature and the physical argument for this behavior is explained.

A study on linear and non-linear optical constants of Rhodamine B thin film deposited on FTO glass

Energy Technology Data Exchange (ETDEWEB)

Yahia, I.S. [Nano-Science & Semiconductor Labs, Physics Department, Faculty of Education, Ain Shams University, Roxy, Cairo (Egypt); Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha (Saudi Arabia); Jilani, Asim, E-mail: asim.jilane@gmail.com [Centre of Nanotechnology, Physics Department-Faculty of Science-AL Faisaliah Campus, King Abdulaziz University, P.O. Box 80200, Jeddah 21589 (Saudi Arabia); Abutalib, M.M. [Centre of Nanotechnology, Physics Department-Faculty of Science-AL Faisaliah Campus, King Abdulaziz University, P.O. Box 80200, Jeddah 21589 (Saudi Arabia); AlFaify, S. [Nano-Science & Semiconductor Labs, Physics Department, Faculty of Education, Ain Shams University, Roxy, Cairo (Egypt); Shkir, M. [Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha (Saudi Arabia); Abdel-wahab, M.Sh.; Al-Ghamdi, Attieh A. [Centre of Nanotechnology, Physics Department-Faculty of Science-AL Faisaliah Campus, King Abdulaziz University, P.O. Box 80200, Jeddah 21589 (Saudi Arabia); El-Naggar, A.M. [Exploitation of Renewable Energy Applications in Saudi Arabia, Physics & Astronomy Department, College of Science, King Saud University, P.O.Box 2455, Riyadh 11451 (Saudi Arabia)

2016-06-01

The aim of this research was to fabricate/deposit the good quality thin film of Rhodamine B dye on fluorine doped tin oxide glass substrate by the low cost spin coating technique and study their linear and nonlinear optical parameters. The thickness of the thin film was measured about 300 nm with alpha step system. The transmittance of the fabricated thin film was found to be above 75% corresponding to the fluorine doped tin oxide layer. The structural analysis was performed with X-rays diffraction spectroscopy. Atomic force microscope showed the topographic image of deposited thin film. Linear optical constant like absorption coefficient, band gap, and extinction index was calculated. The dielectric constant was calculated to know the optical response of Rhodamine B dye over fluorine doped tin oxide substrate. The nonlinear optical constant like linear optical susceptibility χ{sup (1)}, nonlinear optical susceptibility χ{sup (3)}, nonlinear refractive index (n{sub 2}) were calculated by spectroscopic method. This method has advantage over the experimental method like Z-Scan for organic dye base semiconductors for future advance optoelectronics applications like dye synthesis solar cell.

Growth of epitaxial thin films by pulsed laser ablation

International Nuclear Information System (INIS)

Lowndes, D.H.

1992-01-01

High-quality, high-temperature superconductor (HTSc) films can be grown by the pulsed laser ablation (PLA) process. This article provides a detailed introduction to the advantages and curent limitations of PLA for epitaxial film growth. Emphasis is placed on experimental methods and on exploitation of PLA to control epitaxial growth at either the unit cell or the atomic-layer level. Examples are taken from recent HTSc film growth. 33 figs, 127 refs

Epitaxial growth of fcc Ti films on Al(001) surfaces

International Nuclear Information System (INIS)

Saleh, A.A.; Shutthanandan, V.; Shivaparan, N.R.; Smith, R.J.; Tran, T.T.; Chambers, S.A.

1997-01-01

High-energy ion scattering (HEIS), x-ray photoelectron spectroscopy, and x-ray photoelectron diffraction (XPD) were used to study the growth of thin Ti films on Al(001) surfaces. The Al surface peak area in the backscattered ion spectrum of MeV He + ions, incident along the [00 bar 1] direction, was used to monitor the atomic structure of the Ti films during growth. An initial decrease in the area was observed indicating epitaxial film growth. This decrease continued up to a critical film thickness of about 5.5 ML, after which point the structure of the film changed. Titanium films 3, 5, and 9 ML thick were characterized using XPD in the same chamber. Both the HEIS and XPD results show that the Ti films grow with an fcc structure on Al(001). A tetragonal distortion of 2.4% in the fcc Ti film was measured using ions incident along the [10 bar 1] direction. Although there is a general similarity of fcc Ti growth on both Al(001) and Al(110), the submonolayer growth regime does show differences for the two surfaces. copyright 1997 The American Physical Society

Growth dynamics of reactive-sputtering-deposited AlN films

International Nuclear Information System (INIS)

Auger, M.A.; Vazquez, L.; Sanchez, O.; Jergel, M.; Cuerno, R.; Castro, M.

2005-01-01

We have studied the surface kinetic roughening of AlN films grown on Si(100) substrates by dc reactive sputtering within the framework of the dynamic scaling theory. Films deposited under the same experimental conditions for different growth times were analyzed by atomic force microscopy and x-ray diffraction. The AlN films display a (002) preferred orientation. We have found two growth regimes with a crossover time of 36 min. In the first regime, the growth dynamics is unstable and the films present two types of textured domains, well textured and randomly oriented, respectively. In contrast, in the second regime the films are homogeneous and well textured, leading to a relative stabilization of the surface roughness characterized by a growth exponent β=0.37±0.03. In this regime a superrough scaling behavior is found with the following exponents: (i) Global exponents: roughness exponent α=1.2±0.2 and β=0.37±0.03 and coarsening exponent 1/z=0.32±0.05; (ii) local exponents: α loc =1, β loc =0.32±0.01. The differences between the growth modes are found to be related to the different main growth mechanisms dominating their growth dynamics: sticking anisotropy and shadowing, respectively

ZnO film deposition on Al film and effects of deposition temperature on ZnO film growth characteristics

International Nuclear Information System (INIS)

Yoon, Giwan; Yim, Munhyuk; Kim, Donghyun; Linh, Mai; Chai, Dongkyu

2004-01-01

The effects of the deposition temperature on the growth characteristics of the ZnO films were studied for film bulk acoustic wave resonator (FBAR) device applications. All films were deposited using a radio frequency magnetron sputtering technique. It was found that the growth characteristics of ZnO films have a strong dependence on the deposition temperature from 25 to 350 deg. C. ZnO films deposited below 200 deg. C exhibited reasonably good columnar grain structures with highly preferred c-axis orientation while those above 200 deg. C showed very poor columnar grain structures with mixed-axis orientation. This study seems very useful for future FBAR device applications

Low temperature diamond growth by linear antenna plasma CVD over large area

International Nuclear Information System (INIS)

Izak, Tibor; Babchenko, Oleg; Potocky, Stepan; Kromka, Alexander; Varga, Marian

2012-01-01

Recently, there is a great effort to increase the deposition area and decrease the process temperature for diamond growth which will enlarge its applications including use of temperature sensitive substrates. In this work, we report on the large area (20 x 30 cm 2 ) and low temperature (250 C) polycrystalline diamond growth by pulsed linear antenna microwave plasma system. The influence of substrate temperature varied from 250 to 680 C, as controlled by the table heater and/or by microwave power, is studied. It was found that the growth rate, film morphology and diamond to non-diamond phases (sp 3 /sp 2 carbon bonds) are influenced by the growth temperature, as confirmed by SEM and Raman measurements. The surface chemistry and growth processes were studied in terms of activation energies (E a ) calculated from Arrhenius plots. The activation energies of growth processes were very low (1.7 and 7.8 kcal mol -1 ) indicating an energetically favourable growth process from the CO 2 -CH 4 -H 2 gas mixture. In addition, from activation energies two different growth regimes were observed at low and high temperatures, indicating different growth mechanism. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Growth of anodic films on niobium

International Nuclear Information System (INIS)

Gomes, M.A.B.; Bulhoes, L.O.S.

1988-01-01

The analysis of the response of the galvanostatic growth of anodic films on niobium metal in aqueous solutions is shown. The first spark voltage showed a dependence upon value of current density that could be explained as the incorporation of anions into the film. (M.J.C.) [pt

Growth of C60 thin films on Al2O3/NiAl(100) at early stages

Science.gov (United States)

Hsu, S.-C.; Liao, C.-H.; Hung, T.-C.; Wu, Y.-C.; Lai, Y.-L.; Hsu, Y.-J.; Luo, M.-F.

2018-03-01

The growth of thin films of C60 on Al2O3/NiAl(100) at the earliest stage was studied with scanning tunneling microscopy and synchrotron-based photoelectron spectroscopy under ultrahigh-vacuum conditions. C60 molecules, deposited from the vapor onto an ordered thin film of Al2O3/NiAl(100) at 300 K, nucleated into nanoscale rectangular islands, with their longer sides parallel to direction either [010] or [001] of NiAl. The particular island shape resulted because C60 diffused rapidly, and adsorbed and nucleated preferentially on the protrusion stripes of the crystalline Al2O3 surface. The monolayer C60 film exhibited linear protrusions of height 1-3 Å, due to either the structure of the underlying Al2O3 or the lattice mismatch at the boundaries of the coalescing C60 islands; such protrusions governed also the growth of the second layer. The second layer of the C60 film grew only for a C60 coverage >0.60 ML, implying a layer-by-layer growth mode, and also ripened in rectangular shapes. The thin film of C60 was thermally stable up to 400 K; above 500 K, the C60 islands dissociated and most C60 desorbed.

Growth of ultra-thin Ag films on Ni(111)

Energy Technology Data Exchange (ETDEWEB)

Meyer, Axel; Flege, Jan Ingo; Falta, Jens [Institute of Solid State Physics, University of Bremen, 28359 Bremen (Germany); Senanayake, Sanjaya [Chemistry Department, Brookhaven National Laboratory, Upton, NY 11973-5000 (United States); Alamgir, Faisal [Georgia Institute of Technology, Atlanta, GA 30332-0245 (United States)

2009-07-01

The physical and chemical properties of ultra-thin metal films on metallic substrates strongly depend on their morphology and the structure of the buried interface. Hence, detailed knowledge of the growth mechanisms is essential for the creation of new functional materials with novel characteristics. In this contribution, we present a comprehensive structural study of the growth and properties of epitaxial Ag films on Ni(111) by in-situ low energy electron microscopy (LEEM). For lower temperatures, the growth of the Ag film proceeds in a Stranski-Krastanov mode after completion of the wetting layer, while for higher temperatures layer-by-layer growth is observed. Quantitative information about the film structure were obtained by analyzing the intensity-voltage (I-V) dependence of the local electron reflectivity (IV-LEEM). The corresponding I(V) spectra showed intensity oscillations depending on local thickness of the Ag film due to the quantum size effect (QSE). Modeling of the I(V) spectra was performed both within the framework of a one-dimensional Kronig-Penney model and multiple scattering IV-LEED calculations. The results of both approaches concerning the variation of the layer spacings and interface characteristics for different temperatures and film thicknesses will be discussed.

Micro-machined high-frequency (80 MHz) PZT thick film linear arrays.

Science.gov (United States)

Zhou, Qifa; Wu, Dawei; Liu, Changgeng; Zhu, Benpeng; Djuth, Frank; Shung, K

2010-10-01

This paper presents the development of a micromachined high-frequency linear array using PZT piezoelectric thick films. The linear array has 32 elements with an element width of 24 μm and an element length of 4 mm. Array elements were fabricated by deep reactive ion etching of PZT thick films, which were prepared from spin-coating of PZT sol-gel composite. Detailed fabrication processes, especially PZT thick film etching conditions and a novel transferring-and-etching method, are presented and discussed. Array designs were evaluated by simulation. Experimental measurements show that the array had a center frequency of 80 MHz and a fractional bandwidth (-6 dB) of 60%. An insertion loss of -41 dB and adjacent element crosstalk of -21 dB were found at the center frequency.

Portal film charts for a 6 MV linear accelerator

International Nuclear Information System (INIS)

Faermann, S.; Regev, E.; Leser, Y.

1990-01-01

Localization errors frequently arise in the portal film technique due to over-or underdevelop films, for high energy radiotherapy machines. To guarantee the accuracy and reproducibility of the localization film technique portal film charts were introduced into the routine planning for the Mevatron 6MV linear accelerator of the Beilinson Radiotherapy Dept. Maintaining reproducible film processor conditions, two films were used: medical X-ray film Curix RPI Agfa and localization film X-OMAT TL Kodak, combined with front and rear copper screens of 0.5 mm thickness each. The sensitometric curves for each film-screen combination were obtained (optical density as function of cassette dose). The least square fitted O.D. curve was used to obtain the cassette dose which produces an O.D. of 1.6. A theoretical equation for the calculation of the dose at the cassette positions, beyond a water phantom, as function of field size, SSD, patient thickness and patient to cassette separation, was experimentally checked with a 0.6 cc Farmer ionization chamber coupled to a 2570 Farmer dosimeter. As a result portal film charts (expressed in MU) were constructed as a function of FS, air-gap and patient-thickness, and the best partition dose for the double-exposure technique was also established. The patients dose in the double exposure technique was compared to that delivered in diagnostic radiology procedures. (author)

Role of nucleation in nanodiamond film growth

International Nuclear Information System (INIS)

Lifshitz, Y.; Lee, C.H.; Wu, Y.; Zhang, W.J.; Bello, I.; Lee, S.T.

2006-01-01

Nanodiamond films were deposited using different microwave plasma chemical vapor deposition schemes following several nucleation pretreatment methods. The nucleation efficiency and the films structure were investigated using scanning and transmission electron microscopy and Raman spectroscopy. C 2 dimer growth (CH 4 and H 2 in 90% Ar) cannot nucleate diamond and works only on existing diamond surfaces. The methyl radical process (up to 20% CH 4 in H 2 ) allows some nucleation probability on appropriate substrates. Prolonged bias enhanced nucleation initiates both diamond nucleation and growth. C 2 dimer growth results in pure nanodiamond free of amorphous carbon, while prolonged bias enhanced nucleation forms an amorphous carbon/nanodiamond composite

Growth model of Au films on Ru(001)

International Nuclear Information System (INIS)

Canessa, E.; Calmetta, A.

1992-06-01

In an attempt to find generic features on the fractal growth of Au films deposited on Ru(001), a simple simulation model based on irreversible diffusion-limited aggregation (DLA) is discussed. Highly irregular two-dimensional dentritic islands of Au particles that gradually grow on a larger host lattice of Ru particles and have fractal dimension d f approx. 1.70 each, are generated via a multiple had-hoc version of the DLA algorithm for single aggregates. Annealing effects on the islands morphology are reproduced assuming different sticking probabilities at nearest-neighbour lattice sites of Au films on Ru(001). Using simulation data, islands growth are described in analogy to diffusion-limited, precipitate growth with soft impingement of precipities. This leads to analyse thin film island growth kinetics in such fractal systems and to predict a main peak in scattering intensity patterns due to interisland interference. (author). 12 refs, 4 figs

On conjugacy growth of linear groups

OpenAIRE

Breuillard, Emmanuel; de Cornulier, Yves; Lubotzky, Alexander; Meiri, Chen

2011-01-01

We investigate the conjugacy growth of finitely generated linear groups. We show that finitely generated non-virtually-solvable subgroups of GL_d have uniform exponential conjugacy growth and in fact that the number of distinct polynomials arising as characteristic polynomials of the elements of the ball of radius n for the word metric has exponential growth rate bounded away from 0 in terms of the dimension d only.

Non-linear Growth Models in Mplus and SAS

Science.gov (United States)

Grimm, Kevin J.; Ram, Nilam

2013-01-01

Non-linear growth curves or growth curves that follow a specified non-linear function in time enable researchers to model complex developmental patterns with parameters that are easily interpretable. In this paper we describe how a variety of sigmoid curves can be fit using the Mplus structural modeling program and the non-linear mixed-effects modeling procedure NLMIXED in SAS. Using longitudinal achievement data collected as part of a study examining the effects of preschool instruction on academic gain we illustrate the procedures for fitting growth models of logistic, Gompertz, and Richards functions. Brief notes regarding the practical benefits, limitations, and choices faced in the fitting and estimation of such models are included. PMID:23882134

Zirconia thin films from aqueous precursors: Processing, microstructural development, and epitaxial growth

International Nuclear Information System (INIS)

Miller, K.T.

1991-01-01

Thin films of ZrO 2 (Y 2 O 3 ) were prepared from aqueous salt precursors by spin coating. Films were pyrolyzed to produce porous polycrystalline thin films of 5-10 nm grain size. Subsequent microstructural development depends greatly upon the nature of the substrate. Upon randomly oriented sapphire, the films initially sintered to full density; further heat treatment and grain growth causes these films to break into interconnected islands and finally isolated particles. Thermodynamic calculations predict that breakup is energetically favorable when the grain-size film-thickness ratio exceeds a critical value. Upon basal-plane-oriented sapphire, grain growth and breakup prefer the (100) oriented grains, presumably because this orientation is a special interface of low energy. The isolated, oriented grains produced by film breakup act as seeds for the growth of newly deposited material. Upon (100) cubic zirconia, true epitaxial films develop. Epitaxial growth was observed for lattice mismatches up to 1.59%. Growth proceeds from a fine epitaxial layer which is produced during the initial stages of heat treatment, consuming the porous polycrystalline material and producing a dense epitaxial thin film whose misfit is accommodated by a combination of film strain and misfit dislocations

Testing linear growth rate formulas of non-scale endogenous growth models

NARCIS (Netherlands)

Ziesemer, Thomas

2017-01-01

Endogenous growth theory has produced formulas for steady-state growth rates of income per capita which are linear in the growth rate of the population. Depending on the details of the models, slopes and intercepts are positive, zero or negative. Empirical tests have taken over the assumption of

Surface preparation for the heteroepitactic growth of ceramic thin films

International Nuclear Information System (INIS)

Norton, M.G.; Summerfelt, S.R.; Carter, C.B.

1990-01-01

The morphology, composition, and crystallographic orientation of the substrate influence the nucleation and growth of deposited thin films. A method for the preparation of controlled, characteristic surfaces is reported. The surfaces are suitable for the heteroepitactic growth of thin films. When used in the formation of electron-transparent thin foils, the substrates can be used to investigate the very early stages of film growth using transmission electron microscopy. The substrate preparation involves the cleaning and subsequent annealing to generate a surface consisting of a series of steps. The step terraces are formed on the energetically stable surface, and controlled nucleation and growth of films at step edges is found. The substrate materials prepared using this technique include (001) MgO, (001) SrTiO 3 , and (001) LaAlO 3

Temperature-dependent evolution of chemisorbed digermane in Ge thin film growth

International Nuclear Information System (INIS)

Eres, D.; Sharp, J.W.

1992-01-01

The formation and evolution of chemisorbed digermane layers in context with germanium thin film growth was investigated by time- resolved surface reflectometry. Modulation of the source gas supply made possible the separation and independent study of the temperature dependence of the adsorption and desorption processes. The regeneration of active sites by molecular hydrogen desorption was identified as the rate-limiting step at low substrate temperatures. A dynamic method of thin film growth was demonstrated by repetitively replenishing the active film growth sites regenerated between two successive source gas pulses. The film growth rate was shown to be related to the substrate temperature and the delay time between successive source gas pulses

Formation of resonant bonding during growth of ultrathin GeTe films

NARCIS (Netherlands)

Wang, Ruining; Zhang, Wei; Momand, Jamo; Ronneberger, Ider; Boschker, Jos E.; Mazzarello, Riccardo; Kooi, Bart J.; Riechert, Henning; Wuttig, Matthias; Calarco, Raffaella

2017-01-01

A highly unconventional growth scenario is reported upon deposition of GeTe films on the hydrogen passivated Si(111) surface. Initially, an amorphous film forms for growth parameters that should yield a crystalline material. The entire amorphous film then crystallizes once a critical thickness of

Subcritical switching dynamics and humidity effects in nanoscale studies of domain growth in ferroelectric thin films

International Nuclear Information System (INIS)

Blaser, Cédric; Paruch, Patrycja

2015-01-01

Ferroelectric domain switching in c-axis-oriented epitaxial Pb(Zr 0.2 Ti 0.8 )O 3 thin films was studied using biased scanning probe microscopy tips. While linear and logarithmic dependence of domain size on tip bias and writing time, respectively, are well known, we report an additional linear dependence on relative humidity in the 28–65% range. We map out the switched domain size as a function of both the tip bias and the applied pulse time and describe a growth-limited regime for very short pulses and a nucleation-limited regime for very low tip bias. Using ‘interrupted-switching’ measurements, we probe the nucleation regime with subcritical pulses and identify a surprisingly long relaxation time on the order of 100 ms, which we relate to ionic redistribution both on the surface and within the thin film itself. (paper)

Correlating defect density with growth time in continuous graphene films.

Science.gov (United States)

Kang, Cheong; Jung, Da Hee; Nam, Ji Eun; Lee, Jin Seok

2014-12-01

We report that graphene flakes and films which were synthesized by copper-catalyzed atmospheric pressure chemical vapor deposition (APCVD) method using a mixture of Ar, H2, and CH4 gases. It was found that variations in the reaction parameters, such as reaction temperature, annealing time, and growth time, influenced the domain size of as-grown graphene. Besides, the reaction parameters influenced the number of layers, degree of defects and uniformity of the graphene films. The increase in growth temperature and annealing time tends to accelerate the graphene growth rate and increase the diffusion length, respectively, thereby increasing the average size of graphene domains. In addition, we confirmed that the number of pinholes reduced with increase in the growth time. Micro-Raman analysis of the as-grown graphene films confirmed that the continuous graphene monolayer film with low defects and high uniformity could be obtained with prolonged reaction time, under the appropriate annealing time and growth temperature.

Growth of organic films on indoor surfaces

DEFF Research Database (Denmark)

Weschler, Charles J.; Nazaroff, W. W.

2017-01-01

predictions indicate that film growth would primarily be influenced by the gas-phase concentration of SVOCs with octanol-air partitioning (Koa) values in the approximate range 10≤log Koa≤13. Within the relevant range, SVOCs with lower values will equilibrate with the surface film more rapidly. Over time...

Incorporated W Roles on Microstructure and Properties of W-C:H Films by a Hybrid Linear Ion Beam Systems

Directory of Open Access Journals (Sweden)

Peng Guo

2013-01-01

Full Text Available W-incorporated diamond-like carbon (W-C:H films were fabricated by a hybrid beams system consisting of a DC magnetron sputtering and a linear ion source. The W concentration (1.08~31.74 at.% in the film was controlled by varying the sputtering current. The cross-sectional topography, composition, and microstructure of the W-C:H films were investigated by SEM, XPS, TEM, and Raman spectroscopy. The mechanical and tribological properties of the films as a function of W concentration were evaluated by a stress-tester, nanoindentation, and ball-on-disk tribometer, respectively. The results showed that films mainly exhibited the feature of amorphous carbon when W concentration of the films was less than 4.38 at.%, where the incorporated W atoms would be bonded with C atoms and resulted in the formation of WC1-x nanoparticles. The W-C:H film with 4.38 at.% W concentration showed a minimum value of residual compressive stress, a higher hardness, and better tribological properties. Beyond this W concentration range, both the residual stress and mechanical properties were deteriorated due to the growth of tungsten carbide nanoparticles in the carbon matrix.

Growth Mechanism of Cluster-Assembled Surfaces: From Submonolayer to Thin-Film Regime

Science.gov (United States)

Borghi, Francesca; Podestà, Alessandro; Piazzoni, Claudio; Milani, Paolo

2018-04-01

Nanostructured films obtained by assembling preformed atomic clusters are of strategic importance for a wide variety of applications. The deposition of clusters produced in the gas phase onto a substrate offers the possibility to control and engineer the structural and functional properties of the cluster-assembled films. To date, the microscopic mechanisms underlying the growth and structuring of cluster-assembled films are poorly understood, and, in particular, the transition from the submonolayer to the thin-film regime is experimentally unexplored. Here we report the systematic characterization by atomic force microscopy of the evolution of the structural properties of cluster-assembled films deposited by supersonic cluster beam deposition. As a paradigm of nanostructured systems, we focus our attention on cluster-assembled zirconia films, investigating the influence of the building block dimensions on the growth mechanisms and roughening of the thin films, following the growth process from the early stages of the submonolayer to the thin-film regime. Our results demonstrate that the growth dynamics in the submonolayer regime determines different morphological properties of the cluster-assembled thin film. The evolution of the roughness with the number of deposited clusters reproduces the growth exponent of the ballistic deposition in the 2 +1 model from the submonolayer to the thin-film regime.

The effects of oestrogens on linear bone growth

DEFF Research Database (Denmark)

Juul, A

2001-01-01

receptors (ER-alpha and ER-beta) in the human growth plate, and polymorphisms in the ER gene may influence adult height in healthy subjects. Prepubertal oestradiol concentrations are significantly higher in girls than in boys, explaining sex-related differences in pubertal onset. Men with a disruptive......Regulation of linear bone growth in children and adolescents comprises a complex interaction of hormones and growth factors. Growth hormone (GH) is considered to be the key hormone regulator of linear growth in childhood. The pubertal increase in growth velocity associated with GH has traditionally...... been attributed to testicular androgen secretion in boys, and to oestrogens or adrenal androgen secretion in girls. Research data indicating that oestrogen may be the principal hormone stimulating the pubertal growth spurt in boys as well as girls is reviewed. Such an action is mediated by oestrogen...

Growth and structure of Co/Au magnetic thin films

International Nuclear Information System (INIS)

Marsot, N.

1999-01-01

We have studied the growth and the crystallographic structure of magnetic ultra thin cobalt/gold films (Co/Au), in order to investigate the correlations between their magnetic and structural properties. Room temperature (R.T.) Co growth on Au (111) proceeds in three stages. Up to 2 Co monolayers (ML), a bilayer island growth mode is observed. Between 2 and 5 ML, coalescence of the islands occurs, covering the substrate surface and a Co/Au mixing is observed resulting from the de-construction of the Herringbone reconstruction. Finally, beyond 5 ML, the CoAu mixing is buried and the Co growth continues in a 3-D growth. Annealing studies at 600 K on this system show a smoothing effect of the Co film, and at the same time, segregation of Au atoms. The quality of the Co/Au interface (sharpness) is not enhanced by the annealing. The local order was studied by SEXAFS and the long range order by GIXRD showing that the Co film has a hexagonal close packed structure, with an easy magnetization axis perpendicular to the surface. From a local order point of view, the Co grows with an incoherent epitaxy and keeps its own bulk parameters. The GIXRD analysis shows a residual strain in the Co film of 4%. The difference observed between the local order analysis and the long range order results is explained in terms of the low dimensions of the diffracting domains. The evolution of film strains, as a function of the Co coverage, shows a marked deviation from the elastic strain theory. Modification of the strain field in the Co film as a function of the Au coverage is studied by GIXRD analysis. The Au growth study, at R.T., shows no evidence of a Au/Co mixing in the case of the Au/Co interface. The Au overlayer adopts a twinned face centred cubic structure on the rough Co film surface. (author)

Low temperature CVD growth of ultrathin carbon films

Directory of Open Access Journals (Sweden)

Chao Yang

2016-05-01

Full Text Available We demonstrate the low temperature, large area growth of ultrathin carbon films by chemical vapor deposition under atmospheric pressure on various substrates. In particularly, uniform and continuous carbon films with the thickness of 2-5 nm were successfully grown at a temperature as low as 500 oC on copper foils, as well as glass substrates coated with a 100 nm thick copper layer. The characterizations revealed that the low-temperature-grown carbon films consist on few short, curved graphene layers and thin amorphous carbon films. Particularly, the low-temperature grown samples exhibited over 90% transmittance at a wavelength range of 400-750 nm and comparable sheet resistance in contrast with the 1000oC-grown one. This low-temperature growth method may offer a facile way to directly prepare visible ultrathin carbon films on various substrate surfaces that are compatible with temperatures (500-600oC used in several device processing technologies.

Growth and characterization of ultrathin epitaxial MnO film on Ag(001)

Science.gov (United States)

Kundu, Asish K.; Menon, Krishnakumar S. R.

2016-07-01

We present here a comprehensive growth procedure to obtain a well-ordered MnO(001) ultrathin film on Ag(001) substrate. Depending upon the oxygen partial pressure during the growth, different phases of manganese oxide have been detected by Low Energy Electron Diffraction (LEED) and X-ray Photoelectron Spectroscopic (XPS) studies. A modified growth scheme has been adopted to get well-ordered and stoichiometric MnO(001) ultrathin film. The detailed growth mechanism of epitaxial MnO film on Ag(001) has been studied step by step, using LEED and XPS techniques. Observation of sharp (1 × 1) LEED pattern with a low inelastic background, corresponds to a long-range atomic order with low defect densities indicating the high structural quality of the film. The Mn 2p and Mn 3s core-level spectra confirm the oxidation state as well as the stoichiometry of the grown MnO films. Apart from the growth optimization, the evolution of strain relaxation of the MnO(001) film with film thickness has been explored.

Dietary arginine and linear growth

DEFF Research Database (Denmark)

van Vught, Anneke J A H; Dagnelie, Pieter C; Arts, Ilja C W

2013-01-01

Child Intervention Study during 2001-2 (baseline), and at 3-year and 7-year follow-up, were used. Arginine intake was estimated via a 7 d precoded food diary at baseline and 3-year follow-up. Data were analysed in a multilevel structure in which children were embedded within schools. Random intercept......The amino acid arginine is a well-known growth hormone (GH) stimulator and GH is an important modulator of linear growth. The aim of the present study was to investigate the effect of dietary arginine on growth velocity in children between 7 and 13 years of age. Data from the Copenhagen School...... and slopes were defined to estimate the association between arginine intake and growth velocity, including the following covariates: sex; age; baseline height; energy intake; puberty stage at 7-year follow-up and intervention/control group. The association between arginine intake and growth velocity...

In situ characterization of thin film growth: Boron nitride on silicon

International Nuclear Information System (INIS)

Fukarek, W.

2001-01-01

Real-time ellipsometry (RTE) in combination with particle flux measurement is applied to ion beam assisted deposition of boron nitride (BN) films. RTE is used as a tool for process diagnostic to improve the deposition stability. A novel technique for the determination of absolute density depth profiles from dynamic growth rate data and film forming particle flux is employed. From real-time cantilever curvature measurement and simultaneously recorded film thickness data instantaneous stress depth profiles are derived with a depth resolution in the nm range. The synergistic effects on the information obtained from RTE, particle flux, and cantilever bending data are demonstrated. The density of turbostratic BN (tBN) is found to increase slightly with film thickness while the compressive stress decreases, indicating an increasing quality and/or size of crystallites in the course of film growth. Refractive index and density depth profiles in cubic BN (cBN) films correspond perfectly to structural information obtained from dark field transmission electron microscope graphs. The established tBN/cBN two-layer model is found to be a crude approximation that has to be replaced by a three-layer model including nucleation, grain growth, and coalescence of cBN. The instantaneous compressive stress in a homogeneous tBN film is found to decrease, while the density increases during growth. The instantaneous compressive stress depth profiles in cBN films are more complex and not easy to understand but reliable information on the structural evolution during growth can be extracted

Giant secondary grain growth in Cu films on sapphire

Directory of Open Access Journals (Sweden)

David L. Miller

2013-08-01

Full Text Available Single crystal metal films on insulating substrates are attractive for microelectronics and other applications, but they are difficult to achieve on macroscopic length scales. The conventional approach to obtaining such films is epitaxial growth at high temperature using slow deposition in ultrahigh vacuum conditions. Here we describe a different approach that is both simpler to implement and produces superior results: sputter deposition at modest temperatures followed by annealing to induce secondary grain growth. We show that polycrystalline as-deposited Cu on α-Al2O3(0001 can be transformed into Cu(111 with centimeter-sized grains. Employing optical microscopy, x-ray diffraction, and electron backscatter diffraction to characterize the films before and after annealing, we find a particular as-deposited grain structure that promotes the growth of giant grains upon annealing. To demonstrate one potential application of such films, we grow graphene by chemical vapor deposition on wafers of annealed Cu and obtain epitaxial graphene grains of 0.2 mm diameter.

On the mechanism of self-deceleration of the thin oxide film growth

CERN Document Server

Mukhambetov, D G

2002-01-01

The objective of this work was to investigate the kinetics of the two-phase oxide film growth on the alpha-Fe surface at temperatures of 650-750 K. We experimentally determined that the film thickness (h)-time oxidation (tau) relationship in the range denoted above is a logarithmic function, whereas Cabrera and Mott's theory gives a square law of film growth. In our work, analytical treatment of experimental data was made based on this theory, but we propose that self-deceleration of the film growth is caused not by attenuation of the electric intensity in the film because of an increase of h but by the shielding influence of the space charge of diffusing ions and electrons in that oxide film. With that purpose in view, the Debye shielding distance for plasma substance state in the oxide film was taken into consideration. The logarithmic law of oxide film growth was derived. Estimated calculations of this law's parameters were made that quantitatively correspond with literature data. The results obtained were...

Epitaxial growth and properties of YBaCuO thin films

International Nuclear Information System (INIS)

Geerk, J.; Linker, G.; Meyer, O.

1989-08-01

The growth quality of YBaCuO thin films deposited by sputtering on different substrates (Al 2 O 3 , MgO, SrTiO 3 , Zr(Y)O 2 ) has been studied by X-ray diffraction and channeling experiments as a function of the deposition temperature. Besides the substrate orientation, the substrate temperature is the parameter determining whether films grow in c-, a-, (110) or mixed directions. Epitaxial growth correlates with high critical current values in the films of up to 5.5x10 6 A/cm 2 at 77 K. Ultrathin films with thicknesses down to 2 nm were grown revealing three-dimensional superconducting behaviour. Films on (100) SrTiO 3 of 9 nm thickness and below are partially strained indicating commensurate growth. From the analysis of the surface disorder 1 displaced Ba atom per Ba 2 Y row was obtained indicating that the disordered layer thickness is about 0.6 nm. Tunnel junctions fabricated on these films reveal gap-like structures near ±16 mV and ±30 mV. (orig.) [de

Modeling of metal thin film growth: Linking angstrom-scale molecular dynamics results to micron-scale film topographies

Science.gov (United States)

Hansen, U.; Rodgers, S.; Jensen, K. F.

2000-07-01

A general method for modeling ionized physical vapor deposition is presented. As an example, the method is applied to growth of an aluminum film in the presence of an ionized argon flux. Molecular dynamics techniques are used to examine the surface adsorption, reflection, and sputter reactions taking place during ionized physical vapor deposition. We predict their relative probabilities and discuss their dependence on energy and incident angle. Subsequently, we combine the information obtained from molecular dynamics with a line of sight transport model in a two-dimensional feature, incorporating all effects of reemission and resputtering. This provides a complete growth rate model that allows inclusion of energy- and angular-dependent reaction rates. Finally, a level-set approach is used to describe the morphology of the growing film. We thus arrive at a computationally highly efficient and accurate scheme to model the growth of thin films. We demonstrate the capabilities of the model predicting the major differences on Al film topographies between conventional and ionized sputter deposition techniques studying thin film growth under ionized physical vapor deposition conditions with different Ar fluxes.

C-program LINOP for the evaluation of film dosemeters by linear optimization. User manual

International Nuclear Information System (INIS)

Kragh, P.

1995-11-01

Linear programming results in an optimal measuring value for film dosemeters. The Linop program was developed to be used for linear programming. The program permits the evaluation and control of film dosemeters and of all other multi-component dosemeters. This user manual for the Linop program contains the source program, a description of the program and installation and use instructions. The data sets with programs and examples are available upon request. (orig.) [de

Cadmium sulfide thin films growth by chemical bath deposition

Science.gov (United States)

Hariech, S.; Aida, M. S.; Bougdira, J.; Belmahi, M.; Medjahdi, G.; Genève, D.; Attaf, N.; Rinnert, H.

2018-03-01

Cadmium sulfide (CdS) thin films have been prepared by a simple technique such as chemical bath deposition (CBD). A set of samples CdS were deposited on glass substrates by varying the bath temperature from 55 to 75 °C at fixed deposition time (25 min) in order to investigate the effect of deposition temperature on CdS films physical properties. The determination of growth activation energy suggests that at low temperature CdS film growth is governed by the release of Cd2+ ions in the solution. The structural characterization indicated that the CdS films structure is cubic or hexagonal with preferential orientation along the direction (111) or (002), respectively. The optical characterization indicated that the films have a fairly high transparency, which varies between 55% and 80% in the visible range of the optical spectrum, the refractive index varies from 1.85 to 2.5 and the optical gap value of which can reach 2.2 eV. It can be suggested that these properties make these films perfectly suitable for their use as window film in thin films based solar cells.

Growth-induced strong pinning sites in laser ablated YBa2Cu3O7-δ films with a non-random distribution

International Nuclear Information System (INIS)

Huijbregtse, J.M.; Klaassen, F.C.; Geest, R.C.F. van der; Dam, B.; Griessen, R.

1999-01-01

Recently, the authors showed that natural linear defects are the origin of the high critical currents in laser ablated YGBa 2 Cu 3 O 7-δ films. Combining wet-chemical etching and Atomic Force Microscopy, they find that these dislocations are created by island coalescence during growth. Consequently, the defect density can be reproducibly varied by manipulating the density of growth islands, which in turn depends on the substrate temperature. Interestingly, the radial defect distribution function approaches zero at small distances, indicating short range order. Therefore, they are now able to study vortex matter in films with a tailored non-random distribution of natural strong pinning sites

Three-dimensional growth simulation: A study of substrate oriented films

International Nuclear Information System (INIS)

Besnard, A; Martin, N; Carpentier, L

2010-01-01

Monte Carlo simulations are developed to simulate the growth of three-dimensional columnar microstructure in thin films. We are studying in particular oriented microstructure like those produced with the Glancing Angle Deposition technique (GLAD). Some geometrical characteristics of the particles flux, the organization of defect sites on the substrate surface and the atomic surface diffusion are mainly investigated in order to predict the growth processes and the resulting features of the films. This study reports on simulations of thin film growth exhibiting an oblique and zigzag columnar microstructure. Column angle evolution and density are investigated versus incidence angle α or period number n and compared with experimental measurements.

Atmosphere influence on in situ ion beam analysis of thin film growth

International Nuclear Information System (INIS)

Lin, Yuping; Krauss, A.R.; Gruen, D.M.; Chang, R.P.H.; Auciello, O.H.; Schultz, J.A.

1994-01-01

In situ, nondestructive surface characterization of thin-film growth processes in an environment of chemically active gas at pressures of several mTorr is required both for the understanding of growth processes in multicomponent films and layered heterostructures and for the improvement of process reproducibility and device reliability. The authors have developed a differentially pumped pulsed ion beam surface analysis system that includes ion scattering spectroscopy (ISS) and direct recoil spectroscopy (DRS), coupled to an automated ion beam sputter-deposition system (IBSD), to study film growth processes in an environment of chemically active gas, such as required for the growth of oxide, nitride, or diamond thin films. The influence of gas-phase scattering and gas-surface interactions on the ISS and DRS signal intensity and peak shape have been studied. From the intensity variation as a function of ambient gas pressure, the authors have calculated the mean free path and the scattering cross-section for a given combination of primary ion species and ambient gas. Depending on the system geometry and the combination of primary beam and background, it is shown that surface-specific data can be obtained during thin-film growth at pressures ranging from a few mtorr to approximately 1 Torr. Detailed information such as surface composition, structure, and film growth mechanism may be obtained in real-time, making ion beam analysis an ideal nondestructive, in situ probe of thin-film growth processes

Dependence of critical current properties on growth temperature and doping level of nanorods in PLD-YBa2Cu3Oy films

International Nuclear Information System (INIS)

Fujita, N.; Haruta, M.; Ichinose, A.; Maeda, T.; Horii, S.

2013-01-01

Highlights: •We fabricated Y123 films with Ba–Nb–O nanorods at various growth temperatures. •Irreversibility lines depended on growth temperature and doping level of Ba–Nb–O. •Nanorod morphology was drastically changed by growth temperature (T s ). •Its T s dependence of the matching field was different from that for Er123 + Ba–Nb–O. -- Abstract: The vortex-Bose-glass-like irreversibility lines (ILs) emerged for 2.5 and 5.0 at.% Ba–Nb–O (BNO)-doped YBa 2 Cu 3 O y films deposited by PLD using Nd:YAG-laser. The ILs strongly depended on growth temperature (T s ) in addition to the doping level of BNO. The vortex glass region was expanded with increasing T s or doping level of BNO. Drastic change of the nanorod morphology from short and bended nanorods to long and linear nanorods with increasing T s was clarified. Moreover, it was found that T s -dependent ILs were quite different from our previous results in BNO-doped ErBa 2 Cu 3 O y films

Effects of film polarities on InN growth by molecular-beam epitaxy

International Nuclear Information System (INIS)

Xu, K.; Yoshikawa, A.

2003-01-01

Effects of the film polarity on InN growth were investigated in molecular-beam epitaxy (MBE). It was found that N-polarity InN could be grown at higher temperatures than In-polarity one. For the In-polarity films, which were grown on Ga-polar GaN template, the highest growth temperature was limited below 500 deg. C, and the surface morphology and crystal quality tended to be poor mainly because of the tolerated low growth temperature. While for the N-polarity InN films, which were grown on MBE-grown N-polar GaN, the growth temperature could be as high as 600 deg. C. The step-flow-like growth morphology was achieved for the InN films grown with N polarity at 580 deg. C. The resulting full widths of half maximum of x-ray rocking curve around InN (002) and (102) reflections were about 200-250 and 950-1100 arc sec, respectively. The photoluminescence of the InN films peaked at 0.697 eV. The recording Hall mobility of InN film grown in N polarity is 1400 cm 2 /V s with a background carrier concentration of 1.56x10 18 cm -3 at room temperature. For both-polarity films, we found N-rich condition was necessary for the stable InN growth

Growth of n-alkane films on a single-crystal substrate

DEFF Research Database (Denmark)

Wu, Z. U.; Ehrlich, S. N.; Matthies, B.

2001-01-01

The structure and growth mode of alkane films (n-C/sub n/H/sub 2n+2/; n=4, 6, 7) adsorbed on a Ag(111) surface have been investigated by synchrotron X-ray scattering. New models are proposed for the butane (n=4) and hexane (n=6) monolayer and butane bilayer structures. Specular reflectivity scans...... reveal that growth of all films is preempted between two and three layers by nucleation of bulk particles oriented with a single bulk crystal plane parallel to the film. In the case of butane, the bulk particles also have a fixed azimuthal relationship with the film resulting in complete epitaxy....

Role of high microwave power on growth and microstructure of thick nanocrystalline diamond films: A comparison with large grain polycrystalline diamond films

Science.gov (United States)

Tang, C. J.; Fernandes, A. J. S.; Girão, A. V.; Pereira, S.; Shi, Fa-Nian; Soares, M. R.; Costa, F.; Neves, A. J.; Pinto, J. L.

2014-03-01

In this work, we study the growth habit of nanocrystalline diamond (NCD) films by exploring the very high power regime, up to 4 kW, in a 5 kW microwave plasma chemical vapour deposition (MPCVD) reactor, through addition of a small amount of nitrogen and oxygen (0.24%) into 4% CH4 in H2 plasma. The coupled effect of high microwave power and substrate temperature on NCD growth behaviour is systematically investigated by varying only power, while fixing the remaining operating parameters. When the power increases from 2 kW to 4 kW, resulting also in rise of the Si substrate temperature higher than 150 °C, the diamond films obtained maintain the NCD habit, while the growth rate increases significantly. The highest growth rate of 4.6 μm/h is achieved for the film grown at 4 kW, which represents a growth rate enhancement of about 15 times compared with that obtained when using 2 kW power. Possible factors responsible for such remarkable growth rate enhancement of the NCD films are discussed. The evolution of NCD growth characteristics such as morphology, microstructure and texture is studied by growing thick films and comparing it with that of large grain polycrystalline (PCD) films. One important characteristic of the NCD films obtained, in contrast to PCD films, is that irrespective of deposition time (i.e. film thickness), their grain size and surface roughness remain in the nanometer range throughout the growth. Finally, based on our present and previous experimental results, a potential parameter window is established for fast growth of NCD films under high power conditions.

Convex variational problems linear, nearly linear and anisotropic growth conditions

CERN Document Server

Bildhauer, Michael

2003-01-01

The author emphasizes a non-uniform ellipticity condition as the main approach to regularity theory for solutions of convex variational problems with different types of non-standard growth conditions. This volume first focuses on elliptic variational problems with linear growth conditions. Here the notion of a "solution" is not obvious and the point of view has to be changed several times in order to get some deeper insight. Then the smoothness properties of solutions to convex anisotropic variational problems with superlinear growth are studied. In spite of the fundamental differences, a non-uniform ellipticity condition serves as the main tool towards a unified view of the regularity theory for both kinds of problems.

Magnetic x-ray linear dichroism of ultrathin Fe-Ni alloy films

Energy Technology Data Exchange (ETDEWEB)

Schumann, F.O.; Willis, R.F. [Pennsylvania State Univ., University Park, PA (United States); Goodman, K.W. [Lawrence Berkeley National Lab., CA (United States)] [and others

1997-04-01

The authors have studied the magnetic structure of ultrathin Fe-Ni alloy films as a function of Fe concentration by measuring the linear dichroism of the 3p-core levels in angle-resolved photoemission spectroscopy. The alloy films, grown by molecular-beam epitaxy on Cu(001) surfaces, were fcc and approximately four monolayers thick. The intensity of the Fe dichroism varied with Fe concentration, with larger dichroisms at lower Fe concentrations. The implication of these results to an ultrathin film analogue of the bulk Invar effect in Fe-Ni alloys will be discussed. These measurements were performed at the Spectromicroscopy Facility (Beamline 7.0.1) of the Advanced Light Source.

Caregiver perceptions of children's linear growth in Bangladesh: a qualitative analysis.

Science.gov (United States)

Hossain, Muttaquina; Ickes, Scott; Rice, Lauren; Ritter, Gaelen; Naila, Nurun Nahar; Zia, Tasnia; Nahar, Baitun; Mahfuz, Mustafa; Denno, Donna M; Ahmed, Tahmeed; Walson, Judd

2018-03-26

To understand caregivers' perceptions of children's linear growth and to identify the cultural meanings and perceptions of risk associated with poor height attainment. Three investigators from Bangladesh conducted twelve focus group discussions. The study was conducted in rural and slum settings in Bangladesh. Participants included mothers and alternative caregivers (n 81) who were recruited by household screening. No eligible, recruited subjects refused participation. Caregivers reported limited experience with growth monitoring services from the health system. Caregivers mainly use visual cues and developmental milestones to understand if children are growing properly, and recognize that children normally experience both weight gain and linear growth with age. Mothers expressed concern over children's malnutrition and short stature, but did not discuss children's failure to attain a 'growth potential' or distinguish inherited short stature from stunting. Caregivers interpret the consequences of poor height attainment as primarily social and economic and cite few health risks. Linear growth interpretation is determined more by community norms than by guidance from nutrition programming or the health system. Interventions to prevent or reduce linear growth failure may be perceived to have limited value where appropriate linear growth in children is determined by comparison to peers and siblings. Such perceptions may be significant barriers to programmes addressing stunting prevention in settings where many children are stunted. Efforts to raise awareness about the risks of linear growth faltering may need to consider delivering messages to caregivers that emphasize the social and economic consequences of stunting.

The Passive Film Growth Mechanism of New Corrosion-Resistant Steel Rebar in Simulated Concrete Pore Solution: Nanometer Structure and Electrochemical Study.

Science.gov (United States)

Jiang, Jin-Yang; Wang, Danqian; Chu, Hong-Yan; Ma, Han; Liu, Yao; Gao, Yun; Shi, Jinjie; Sun, Wei

2017-04-14

An elaborative study was carried out on the growth mechanism and properties of the passive film for a new kind of alloyed corrosion-resistant steel (CR steel). The passive film naturally formed in simulated concrete pore solutions (pH = 13.3). The corrosion resistance was evaluated by various methods including open circuit potential (OCP), linear polarization resistance (LPR) measurements, and electrochemical impedance spectroscopy (EIS). Meanwhile, the 2205 duplex stainless steel (SS steel) was evaluated for comparison. Moreover, the passive film with CR steel was studied by means of X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), Atomic Force Microscope (AFM), and the Mott‑Schottky approach. The results showed that the excellent passivity of CR steel could be detected in a high alkaline environment. The grain boundaries between the fine passive film particles lead to increasing Cr oxide content in the later passivation stage. The filling of cation vacancies in the later passivation stage as well as the orderly crystalized inner layer contributed to the excellent corrosion resistance of CR steel. A passive film growth model for CR steel was proposed.

New fabrication of high-frequency (100-MHz) ultrasound PZT film kerfless linear array.

Science.gov (United States)

Zhu, Benpeng; Chan, Ngai Yui; Dai, Jiyan; Shung, K Kirk; Takeuchi, Shinichi; Zhou, Qifa

2013-04-01

The paper describes the design, fabrication, and measurements of a high-frequency ultrasound kerfless linear array prepared from hydrothermal lead zirconate titanate (PZT) thick film. The 15-μm hydrothermal PZT thick film with an area of 1 × 1 cm, obtained through a self-separation process from Ti substrate, was used to fabricate a 32-element 100-MHz kerfless linear array with photolithography. The bandwidth at -6 dB without matching layer, insertion loss around center frequency, and crosstalk between adjacent elements were measured to be 39%, -30 dB, and -15 dB, respectively.

Linear stability of liquid films with phase change at the interface

International Nuclear Information System (INIS)

Spindler, Bertrand

1980-01-01

The objective of this research thesis is to study the linear stability of the flow of a liquid film on an inclined plane with a heat flow on the wall and an interfacial phase change, and to highlight the influence of the phase change on the flow stability. In order to do so, the author first proposed a rational simplification of equations by studying the order of magnitude of different terms, and based on some simple hypotheses regarding flow physics. Two stability studies are then addressed, one regarding a flow with a pre-existing film, and the other regarding the flow of a condensation film. In both cases, it is assumed that there is no imposed heat flow, but that the driving effect of vapour by the liquid film is taken into account [fr

Appraisal on Textured Grain Growth and Photoconductivity of ZnO Thin Film SILAR

Directory of Open Access Journals (Sweden)

Deepu Thomas

2014-01-01

Full Text Available ZnO thin films were prepared by successive ionic layer adsorption reaction (SILAR method. The textured grain growth along c-axis in pure ZnO thin films and doped with Sn was studied. The structural analysis of the thin films was done by X-ray diffraction and surface morphology by scanning electron microscopy. Textured grain growth of the samples was measured by comparing the peak intensities. Textured grain growth and photo current in ZnO thin films were found to be enhanced by doping with Sn. ZnO thin film having good crystallinity with preferential (002 orientation is a semiconductor with photonic properties of potential benefit to biophotonics. From energy dispersive X-ray analysis, it is inferred that oxygen vacancy creation is responsible for the enhanced textured grain growth in ZnO thin films.

Monolayer-Mediated Growth of Organic Semiconductor Films with Improved Device Performance.

Science.gov (United States)

Huang, Lizhen; Hu, Xiaorong; Chi, Lifeng

2015-09-15

Increased interest in wearable and smart electronics is driving numerous research works on organic electronics. The control of film growth and patterning is of great importance when targeting high-performance organic semiconductor devices. In this Feature Article, we summarize our recent work focusing on the growth, crystallization, and device operation of organic semiconductors intermediated by ultrathin organic films (in most cases, only a monolayer). The site-selective growth, modified crystallization and morphology, and improved device performance of organic semiconductor films are demonstrated with the help of the inducing layers, including patterned and uniform Langmuir-Blodgett monolayers, crystalline ultrathin organic films, and self-assembled polymer brush films. The introduction of the inducing layers could dramatically change the diffusion of the organic semiconductors on the surface and the interactions between the active layer with the inducing layer, leading to improved aggregation/crystallization behavior and device performance.

Growth-temperature-dependent optical and acetone detection properties of ZnO thin films

International Nuclear Information System (INIS)

Shewale, P. S.; Yu, Y. S.

2015-01-01

Zinc oxide (ZnO) thin films were prepared onto glass substrates at moderately low growth temperature by two-stage spray pyrolysis technique. The effects of growth temperature on structural, optical and acetone detection properties were investigated with X-ray diffractometry, a UV–visible spectrophotometer, photoluminescence (PL) spectroscopy and a homemade gas sensor testing unit, respectively. All the films are polycrystalline with a hexagonal wurtzite phase and exhibit a preferential orientation along [002] direction. The film crystallinity is gradually enhanced with an increase in growth temperature. The optical measurements show that all the films are physically highly transparent with a transmittance greater than 82% in the visible range. The band gap of the film is observed to exhibit a slight red shift with an increasing growth temperature. The PL studies on the films show UV/violet PL band at ∼ 395 nm. Among all the films investigated, the film deposited at 250 °C demonstrates a maximum sensitivity of 13% towards 20 ppm of acetone vapors at 300 °C operating temperature. (paper)

Investigation of Au/Au(100) film growth with energetic deposition by kinetic Monte Carlo simulation

International Nuclear Information System (INIS)

Zhang Qingyu; Ma Tengcai; Pan Zhengying; Tang Jiayong

2000-01-01

The Au/Au(100) epitaxial growth with energetic deposition was simulated by using kinetic Monte Carlo method. The influences of energetic atoms on morphology and atomistic processes in the early stage of film growth were investigated. The reentrant layer-by-layer growth was observed in the temperature range of 450 K to 100 K. The authors found the energetic atoms can promote the nucleation and island growth in the early stages of film growth and enhance the smoothness of film surface at temperatures of film growth in 3-dimensional mode and in quasi-two-dimensional mode. The atomistic mechanism that promotes the nucleation and island growth and enhances the smoothness of film surface is discussed

Co-depositing Sn controls the growth of Al films as surfactant

International Nuclear Information System (INIS)

Barna, P. B.; Kovacs, A.; Misjak, F.; Eisenmenger-Sittner, C.; Bangert, H.; Tomastik, C.

2002-01-01

The present study investigates the influence of co-deposited Sn on the atomic processes involved in the structure evolution of vapour-deposited Al films. The films were prepared in HV by thermal evaporation from W sources at 1600 C substrate temperature either on Si wafers covered by a thermally grown oxide or on air cleaved mica. By applying the half-shadow technique, pure and Sn-doped Al films could be deposited simultaneously. The samples were investigated by AFM, scanning AES, X-TEM as well as by X-ray diffraction methods. The grain growth of Al is promoted by Sn in all stages of the film formation. Scanning AES measurements prove the existence of a wetting Sn layer both on the surface of Al islands and on the surface of the continuos Al layer. Excess Sn forms islands on the growth surface. The surface of pure Al layers exhibits grain boundary grooves and bunches of growth steps around terraces, while that of the Sn doped layers is more rounded. The substrate-film interface was covered by a thin Sn layer. AES measurements also prove the presence of Sn on the growth surface of Al films even after termination of Sn addition. Results of these experiments indicate that during co-deposition of Al and Sn the impinging Al atoms penetrate the wetting layer and are incorporated into the already existing Al crystals. A model has been developed for describing the growth of Al crystals in the presence Sn. (Authors)

Growth and characterization of nanodiamond layers prepared using the plasma-enhanced linear antennas microwave CVD system

Energy Technology Data Exchange (ETDEWEB)

Fendrych, Frantisek; Taylor, Andrew; Peksa, Ladislav; Kratochvilova, Irena; Kluiber, Zdenek; Fekete, Ladislav [Institute of Physics, Academy of Sciences of the Czech Republic, v.v.i, Na Slovance 2, CZ-18221 Prague 8 (Czech Republic); Vlcek, Jan [Department of Physics and Measurement, Institute of Chemical Technology Prague, Technicka 5, CZ-16628 Prague 6 (Czech Republic); Rezacova, Vladimira; Petrak, Vaclav [Faculty of Biomedical Engineering, Czech Technical University, Sitna 3105, CZ-27201 Kladno 2 (Czech Republic); Liehr, Michael [Leybold Optics Dresden GmbH, Zur Wetterwarte 50, D-01109 Dresden (Germany); Nesladek, Milos, E-mail: fendrych@fzu.c [IMOMEC division, IMEC, Institute for Materials Research, University Hasselt, Wetenschapspark 1, B-3590 Diepenbeek (Belgium)

2010-09-22

Industrial applications of plasma-enhanced chemical vapour deposition (CVD) diamond grown on large area substrates, 3D shapes, at low substrate temperatures and on standard engineering substrate materials require novel plasma concepts. Based on the pioneering work of the group at AIST in Japan, the high-density coaxial delivery type of plasmas has been explored (Tsugawa et al 2006 New Diamond Front. Carbon Technol. 16 337-46). However, an important challenge is to obtain commercially interesting growth rates at very low substrate temperatures. In this work we introduce the concept of novel linear antenna sources, designed at Leybold Optics Dresden, using high-frequency pulsed MW discharge with a high plasma density. This type of pulse discharges leads to the preparation of nanocrystalline diamond (NCD) thin films, compared with ultra-NCD thin films prepared in (Tsugawa et al 2006 New Diamond Front. Carbon Technol. 16 337-46). We present optical emission spectroscopy data for the CH{sub 4}-CO{sub 2}-H{sub 2} gas chemistry and we discuss the basic properties of the NCD films grown.

Cage and linear structured polysiloxane/epoxy hybrids for coatings: Surface property and film permeability.

Science.gov (United States)

Ma, Yanli; He, Ling; Jia, Mengjun; Zhao, Lingru; Zuo, Yanyan; Hu, Pingan

2017-08-15

Three polysiloxane/epoxy hybrids obtained by evolving cage- or linear-structured polysiloxane into poly glycidyl methacrylate (PGMA) matrix are compared used as coatings. One is the cage-structured hybrid of P(GMA/MA-POSS) copolymer obtained by GMA and methacrylisobutyl polyhedral oligomeric silsesquioxane (MA-POSS) via free radical polymerization, the other two are PGMA/NH 2 -POSS and PGMA/NH 2 -PDMS hybrids by cage-structured aminopropyllsobutyl POSS (NH 2 -POSS) or linear-structured diamino terminated poly(dimethylsiloxane) (NH 2 -PDMS) to cure PGMA. The effect of MA-POSS, NH 2 -POSS and NH 2 -PDMS on polysiloxane/epoxy hybrid films is characterized according to their surface morphology, transparency, permeability, adhesive strength and thermo-mechanical properties. Due to caged POSS tending to agglomerate onto the film surface, P(GMA/MA-POSS) and PGMA/NH 2 -POSS films exhibit much more heterogeneous surfaces than PGMA/NH 2 -PDMS film, but the well-compatibility between epoxy matrix and MA-POSS has provided P(GMA/MA-POSS) film with much higher transmittance (98%) than PGMA/NH 2 -POSS film (24%), PGMA/NH 2 -PDMS film (27%) and traditional epoxy resin film (5%). The introduction of polysiloxane into epoxy matrix is confirmed to create hybrids with strong adhesive strength (526-1113N) and high thermos-stability (T g =262-282°C), especially the cage-structured P(GMA/MA-POSS) hybrid (1113N and 282°C), but the flexible PDMS improves PGMA/NH 2 -PDMS hybrid with much higher storage modulus (519MPa) than PGMA/NH 2 -POSS (271MPa), which suggests that PDMS is advantage in improving the film stiffness than POSS cages. However, cage-structured P(GMA/MA-POSS) and PGMA/NH 2 -POSS indicate higher permeability than PGMA/NH 2 -PDMS and traditional epoxy resin. Comparatively, the cage-structured P(GMA/MA-POSS) hybrid is the best coating in transparency, permeability, adhesive strength and thermostability, but linear-structured PGMA/NH 2 -PDMS hybrid behaviors the best coating in

Why in situ, real-time characterization of thin film growth processes?

International Nuclear Information System (INIS)

Auciello, O.; Krauss, A.R.

1995-01-01

Since thin-film growth occurs at the surface, the analytical methods should be highly surface-specific. although subsurface diffusion and chemical processes also affect film properties. Sampling depth and ambient-gas is compatibility are key factors which must be considered when choosing in situ probes of thin-film growth phenomena. In most cases, the sampling depth depends on the mean range of the exit species (ion, photon, or electron) in the sample. The techniques that are discussed in this issue of the MRS Bulletin (1) have been chosen because they may be used for in situ, real-time analysis of film-growth phenomena in vacuum and in the presence of ambient gases resulting either from the deposition process or as a requirement for the production of the desired chemical phase. A second criterion for inclusion is that the instrumentation be sufficiently compact and inexpensive to permit use as a dedicated tool in a thin-film deposition system

New phenomena in epitaxial growth: solid films on quasicrystalline substrates

International Nuclear Information System (INIS)

Fournee, V; Thiel, P A

2005-01-01

An overview is given of the research conducted in the field of solid film growth on quasiperiodic surfaces. An atomistic description of quasicrystalline surfaces is presented and discussed in relation to bulk structural models. The various systems for which thin film growth has been attempted so far are reviewed. Emphasis is placed on the nucleation mechanisms of the solid films, on their growth modes in relation to the nature of the deposited metals, on the possibility of intermixing or alloying at the interface and on the epitaxial relationships at the crystal-quasicrystal interfaces. We also describe situations where the deposited elements adopt a quasiperiodic structure, which opens up the possibility of extending our understanding of the relation between quasiperiodicity and the physical properties of such structurally and chemically complex solids. (topical review)

Beneficial effect of physical activity on linear growth rate of ...

African Journals Online (AJOL)

It is not known if nutritional and/or other interventions could improve linear growth in adolescents. The purpose of this study was to assess the role of physical activity in promoting linear growth velocity of black adolescents in a low-income shanty town in South Africa. Two schools in a disadvantaged shanty town participated ...

pH-Amplified multilayer films based on hyaluronan: influence of HA molecular weight and concentration on film growth and stability.

Science.gov (United States)

Shen, Liyan; Chaudouet, Patrick; Ji, Jian; Picart, Catherine

2011-04-11

In this study, we investigate the growth and internal properties of polyelectrolyte multilayer films made of poly(l-lysine) and hyaluronan (PLL/HA) under pH-amplified conditions, that is, by alternate deposition of PLL at high pH and HA at low pH. We focus especially on the influence of the molecular weight of HA in this process as well as on its concentration in solution. Film growth was followed by quartz crystal microbalance and by infrared spectroscopy to quantify the deposited mass and to characterize the internal properties of the films, including the presence of hydrogen bonds and the ionization degree of HA in the films. Film growth was significantly faster for HA of high molecular weight (1300 kDa) as compared with 400 and 200 kDa. PLL was found to exhibit a random structure once deposited in the films. Furthermore, we found that PLL-ending films are more stable when they are placed in PBS than their HA counterparts. This was explained on the basis of more cohesive interactions in the films for PLL-ending films. Finally, we quantified PLL(FITC) diffusion into the films and observed that PLL diffusion is enhanced when PLL is paired with the HA of high MW. All together, these results suggest that besides purely physicochemical parameters such as variation in pH, the molecular weight of HA, its concentration in solution, and the possibility to form intermolecular HA association play important roles in film growth, internal cohesion, and stability.

Growth of (100)-highly textured BaBiO{sub 3} thin films on silicon

Energy Technology Data Exchange (ETDEWEB)

Ferreyra, C. [GIyA and INN, CNEA, Av. Gral Paz 1499, 1650 San Martín, Buenos Aires (Argentina); Departamento de Física, Facultad Ciencias Exactas y Naturales, Universidad de Buenos Aires, Pabellón 1, Ciudad Universitaria, Buenos Aires (Argentina); Marchini, F. [Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET) (Argentina); Departamento de Química Inorgánica, Analítica y Química-Física, INQUIMAE-CONICET, Facultad Ciencias Exactas y Naturales, Universidad de Buenos Aires, Pabellón 2, Ciudad Universitaria, Buenos Aires (Argentina); Granell, P. [INTI, CMNB, Av. Gral Paz 5445, B1650KNA San Martín, Buenos Aires (Argentina); Golmar, F. [Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET) (Argentina); INTI, CMNB, Av. Gral Paz 5445, B1650KNA San Martín, Buenos Aires (Argentina); Escuela de Ciencia y Tecnología, UNSAM, Campus Miguelete, 1650 San Martín, Buenos Aires (Argentina); Albornoz, C. [GIyA and INN, CNEA, Av. Gral Paz 1499, 1650 San Martín, Buenos Aires (Argentina); and others

2016-08-01

We report on the growth and characterization of non-epitaxial but (100)-highly textured BaBiO{sub 3} thin films on silicon substrates. We have found the deposition conditions that optimize the texture, and show that the textured growth is favoured by the formation of a BaO layer at the first growth stages. X-ray diffraction Φ-scans, together with the observation that the same textured growth is found on films grown on Pt and SiO{sub 2} buffered Si, demonstrate the absence of epitaxy. Finally, we have shown that our (100)-oriented BaBiO{sub 3} films can be used as suitable buffers for the growth of textured heterostructures on silicon, which could facilitate the integration of potential devices with standard electronics. - Highlights: • BaBiO{sub 3} thin films were grown on Si substrates and characterized. • Films prepared using optimized conditions are highly textured in the (100) direction. • The absence of in-plane texture was demonstrated by X-ray diffraction. • Our films are suitable buffers for the growth of (100)-textured oxide heterostructures.

Direct growth of superconducting NdFeAs(O,F) thin films by MBE

Energy Technology Data Exchange (ETDEWEB)

Chihara, Masashi, E-mail: chihara@iku.xtal.nagoya-u.ac.jp [Department of Crystalline Materials Science, Nagoya University, Chikusa-ku, Nagoya 464-8603 (Japan); Sumiya, Naoki; Arai, Kenta [Department of Crystalline Materials Science, Nagoya University, Chikusa-ku, Nagoya 464-8603 (Japan); Ichinose, Ataru; Tsukada, Ichiro [Central Research Institute of Electric Power Industry, Yokosuka-shi, Kanagawa 240-0101 (Japan); Hatano, Takafumi; Iida, Kazumasa; Ikuta, Hiroshi [Department of Crystalline Materials Science, Nagoya University, Chikusa-ku, Nagoya 464-8603 (Japan)

2015-11-15

Highlights: • Highly textured NdFeAs(O,F) thin films were obtained by a direct growth method. • Enhancing the migration was crucial to realize the direct growth. • The critical current density exceeded 3 MA/cm{sup 2} at self-field and 1 MA/cm{sup 2} at 9 T. • A two-dimensional growth was confirmed by the observation of surface morphology. - Abstract: We report on the growth of NdFeAs(O,F) superconducting thin films by molecular beam epitaxy without having a NdOF secondary layer that was necessary for fluorine doping in our previous studies. The key to realizing the direct growth of a superconducting film was the enhancement of migration of the raw materials on the substrate, which was accomplished by two steps. Firstly, we increased the growth temperature that improved the crystalline quality of parent NdFeAsO thin films. Secondly, the atmosphere in the chamber during the growth was improved by changing the crucible material of the Fe source cell. Highly textured NdFeAs(O,F) thin films with critical temperatures up to 50 K were obtained, and terraces were observed by atomic force microscope, indicating a two-dimensional growth. However, precipitates were also found on the surface, which suggests that enhancing further the migration is necessary for obtaining a NdFeAs(O,F) thin film with a better quality.

The study of thin film growth by using Monte Carlo method

International Nuclear Information System (INIS)

Tandogan, M.; Aktas, S.

2010-01-01

Thin film growth was studied by using Monte Carlo simulation method. Three basic models were used in this study. Model A, the gas particles used for the formation of film were under no external effects until they stick on the surface or to another particle which already stickled on the surface to form the film. Model B, gases were drifted towards the surface by an external agent. Model C, where the gas particles in the closed container were always distributed uniformly throughout the container while they are in gas state. The simulations revealed the fact that for an ideal thin film growth Model C gave the best result to prepare a thin film while a thicker but a better quality could be obtained by Model B.

The non-linear fitting method to analyze the measured M-S plots of bipolar passive films

International Nuclear Information System (INIS)

Jiang Ruijing; Chen Changfeng; Zheng Shuqi

2010-01-01

Mott-Schottky (M-S) analysis is an effective approach to investigate the electronic property of passive films of metals, and it is well suitable for the passive film with single space charge capacitance. But there is no proper method to analyze the C sc -2 vs. V m plots of passive films with several space charge capacitances in series connection, such as bipolar passive films. In this paper, the relationship between the space charge capacitance of the bipolar passive film and the applied potential was deduced and the features of corresponding plots were given out simultaneously. Accordingly, a non-linear fitting method was presented to analyze the C sc -2 vs. V m plots of bipolar passive films. Then the method was used to study the semiconductor characteristics of bipolar passive films formed on the surface of Nickel base alloy after being corroded in the environments with high temperatures and high partial pressures of H 2 S/CO 2 . The fitting results indicate that the non-linear fitting of M-S plots can well help to understand the anti-corrosion mechanism of bipolar passive films.

Thin film growth studies using time-resolved x-ray scattering

Science.gov (United States)

Kowarik, Stefan

2017-02-01

Thin-film growth is important for novel functional materials and new generations of devices. The non-equilibrium growth physics involved is very challenging, because the energy landscape for atomic scale processes is determined by many parameters, such as the diffusion and Ehrlich-Schwoebel barriers. We review the in situ real-time techniques of x-ray diffraction (XRD), x-ray growth oscillations and diffuse x-ray scattering (GISAXS) for the determination of structure and morphology on length scales from Å to µm. We give examples of time resolved growth experiments mainly from molecular thin film growth, but also highlight growth of inorganic materials using molecular beam epitaxy (MBE) and electrochemical deposition from liquids. We discuss how scaling parameters of rate equation models and fundamental energy barriers in kinetic Monte Carlo methods can be determined from fits of the real-time x-ray data.

Texture control and growth mechanism of WSe{sub 2} film prepared by rapid selenization of W film

Energy Technology Data Exchange (ETDEWEB)

Li, Hongchao [State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China); Chongyi Zhangyuan Tungsten Industry Corporation Limited, Ganzhou 341300 (China); Gao, Di; Li, Kun; Pang, Mengde; Xie, Senlin [State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China); Liu, Rutie, E-mail: llrrtt@csu.edu.cn [State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China); Zou, Jianpeng [State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China)

2017-02-01

Highlights: • We present a highly efficient method for preparing WSe{sub 2} film by rapid selenization. • The W film phase composition has little effect on WSe{sub 2} film orientation. • W film density is a critical factor that influences the WSe{sub 2} orientation. • A growth model was proposed for two kinds of WSe{sub 2} film textures. - Abstract: The tungsten diselenide (WSe{sub 2}) films with different orientation present unique properties suitable for specific applications, such as WSe{sub 2} with a C-axis⊥substrate for optoelectronics and WSe{sub 2} with a C-axis // substrate for electrocatalysts. Orientation control of WSe{sub 2} is essential for realizing the practical applications. In this letter, a WSe{sub 2} film has been prepared via rapid selenization of a magnetron-sputtered tungsten (W) film. The influence of the magnetron-sputtered W film on WSe{sub 2} film growth was studied systematically. Scanning electron microscopy, X-ray diffractometry and high-resolution transmission electron microscopy were used to evaluate the morphology, microstructure and phase composition of the W and WSe{sub 2} films. The substrate temperature has a significant effect on the W film phase composition, but little effect on the WSe{sub 2} film orientation. The WSe{sub 2} orientation can be controlled by changing the W film microstructure. A dense W film that is deposited at low pressure is conducive to the formation of WSe{sub 2} with a C-axis⊥substrate, whereas a porous W film deposited at high pressure favors the formation of WSe{sub 2} with a C-axis // substrate. A growth model for the WSe{sub 2} film with different texture has been proposed based on the experimental results. The direction of selenium (Se) vapor diffusion differs at the top and side surfaces. This is a key factor for the preparation of anisotropic WSe{sub 2} films. Highly oriented WSe{sub 2} films with a C-axis⊥substrate grow from the dense W film deposited at low pressure because Se vapor

Growth of anodic oxide films on oxygen-containing niobium

Energy Technology Data Exchange (ETDEWEB)

Habazaki, H. [Graduate School of Engineering, Hokkaido University, Sapporo 060-8628 (Japan)]. E-mail: habazaki@eng.hokudai.ac.jp; Ogasawara, T. [Graduate School of Engineering, Hokkaido University, Sapporo 060-8628 (Japan); Konno, H. [Graduate School of Engineering, Hokkaido University, Sapporo 060-8628 (Japan); Shimizu, K. [University Chemical Laboratory, Keio University, Yokohama 223-8522 (Japan); Asami, K. [Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan); Saito, K. [Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan); Nagata, S. [Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan); Skeldon, P. [Corrosion and Protection Centre, School of Materials, The University of Manchester, P.O. Box 88, Manchester M60 1QD (United Kingdom); Thompson, G.E. [Corrosion and Protection Centre, School of Materials, The University of Manchester, P.O. Box 88, Manchester M60 1QD (United Kingdom)

2005-09-20

The present study is directed at understanding of the influence of oxygen in the metal on anodic film growth on niobium, using sputter-deposited niobium containing from about 0-52 at.% oxygen, with anodizing carried out at high efficiency in phosphoric acid electrolyte. The findings reveal amorphous anodic niobia films, with no significant effect of oxygen on the field strength, transport numbers, mobility of impurity species and capacitance. However, since niobium is partially oxidized due to presence of oxygen in the substrate, less charge is required to form the films, hence reducing the time to reach a particular film thickness and anodizing voltage. Further, the relative thickness of film material formed at the metal/film interface is increased by the incorporation of oxygen species into the films from the substrate, with an associated altered depth of incorporation of phosphorus species into the films.

Nucleation and growth microstructural study of ti films on 304 SS substrates

Directory of Open Access Journals (Sweden)

Rogério de Almeida Vieira

2004-09-01

Full Text Available Coating of steel surfaces with titanium films has been studied with the objective to protect them against corrosion, and to create an intermediate film for CVD diamond and TiN film deposition. In this work, the nucleation, growth mechanisms and microstructural formation of the titanium films deposited on 304 stainless steel (304 SS substrate are presented and discussed. The titanium films of variable thickness were obtained by vapour phase deposition produced by electron beam. The surfaces of these samples were observed by scanning electron microscopy. The cross sections of these samples were observed by using an atomic force microscope. The Ti film-304 SS interfaces were analyzed by X-ray diffraction. The results showed that titanium films have a columnar growth. The Ti film-304 SS interface had a residual compression stress at room temperature due to the inter-diffusion process.

Grain Growth in Nanocrystalline Mg-Al Thin Films

Energy Technology Data Exchange (ETDEWEB)

Kruska, Karen; Rohatgi, Aashish; Vemuri, Venkata Rama Ses; Kovarik, Libor; Moser, Trevor H.; Evans, James E.; Browning, Nigel D.

2017-10-05

An improved understanding of grain growth kinetics in nanocrystalline materials, and in metals and alloys in general, is of continuing interest to the scientific community. In this study, Mg - Al thin films containing ~10 wt.% Al and with 14.5 nm average grain size were produced by magnetron-sputtering and subjected to heat-treatments. The grain growth evolution in the early stages of heat treatment at 423 K (150 °C), 473 K (200 °C) and 573K (300 °C) was observed with transmission electron microscopy and analyzed based upon the classical equation developed by Burke and Turnbull. The grain growth exponent was found to be 7±2 and the activation energy for grain growth was 31.1±13.4 kJ/mol, the latter being significantly lower than in bulk Mg-Al alloys. The observed grain growth kinetics are explained by the Al supersaturation in the matrix and the pinning effects of the rapidly forming beta precipitates and possibly shallow grain boundary grooves. The low activation energy is attributed to the rapid surface diffusion which is dominant in thin film systems.

AFM study of growth of Bi2Sr2-xLaxCuO6 thin films

International Nuclear Information System (INIS)

Haitao Yang; Hongjie Tao; Yingzi Zhang; Duogui Yang; Lin Li; Zhongxian Zhao

1997-01-01

c-axis-oriented Bi 2 Sr 1.6 La 0.4 CuO 6 thin films deposited on flat planes of (100)SrTiO 3 , (100)LaAlO 3 and (100)MgO substrates and vicinal planes (off-angle ∼ 6 deg.) of SrTiO 3 substrates by RF magnetron sputtering were studied by atomic force microscopy (AFM). T c of these films reached 29 K. Film thickness ranged from 15 nm to 600 nm. Two typical growth modes have been observed. AFM images of thin films on flat planes of substrates showed a terraced-island growth mode. By contrast, Bi-2201 thin films on vicinal planes of substrates showed a step-flow growth mode. The growth unit is a half-unit-cell in the c-axis for both growth modes. No example of spiral growth, which was thought to be the typical structure of YBCO thin films, was found in either of these kinds of thin films. (author)

Epitaxial growth of atomically flat gadolinia-doped ceria thin films by pulsed laser deposition

DEFF Research Database (Denmark)

Chen, Yunzhong; Pryds, Nini; Schou, Jørgen

2011-01-01

Epitaxial growth of Ce0.8Gd0.2O2(CGO) films on (001) TiO2-terminated SrTiO3 substrates by pulsed laser deposition was investigated using in situ reflective high energy electron diffraction. The initial film growth shows a Stransky–Krastanov growth mode. However, this three-dimensional island...... formation is replaced by a two-dimensional island nucleation during further deposition, which results in atomically smooth CGO films. The obtained high-quality CGO films may be attractive for the electrolyte of solid-oxide fuel cells operating at low temperature....

Effects of an ultraviolet-visible rays translation film on growth of leaf or root vegetables

International Nuclear Information System (INIS)

Hamamoto, H.; Ueno, K.; Yamazaki, K.

2008-01-01

A new film that absorbs ultraviolet radiation (UV) and fluoresces red light was tested as a rain shelter for the cultivation of turnip (Brassica rapa L.), spinach (Spinacia oleracea L.), and Welsh onion (Allium fistulosum L.). The effect of this UV-visible ray translation film on various growth parameters (height, fresh and dry weight, leaf area and leaf sheath diameter) was compared with those under normal clear film, new UV-cut film, and used UV-cut film respectively. The transmissivity of UV was about 70% for the normal clear film, about 20% for the UV-visible ray translation film and used UV-cut film, and about 10% for the new UV-cut film. The transmissivity of photosynthetically active radiation (PAR) was about 90% for the normal clear film and the new UV-cut film, and about 80% for the used UV-cut film, while the mean transmissivity of PAR was about 80% for the UV-visible ray translation film, with about 60% transmissivity of blue radiation and over 90% of red radiation. The UV-visible ray translation film did not promote the growth of turnip roots but did significantly promote the growth of spinaches and Welsh onions compared with the normal clear film. The UV-visible ray translation film cover promoted the growth of spinaches and Welsh onions to a similar or greater extent compared to the new UV-cut film and also to a greater extent compared to the used UV-cut film

Growth, morphology, and conductivity in semimetallic/metallic films on Si(001)

Energy Technology Data Exchange (ETDEWEB)

Jnawali, Giriraj

2009-06-09

This dissertation deals with the study of epitaxial growth of semimetallic (Bi) and metallic (Ag) films on Si(001) as well as in situ electrical transport study of those films via surface manipulation. The focus of the transport measurements is to study the influence of the surface morphology or structure on the resistance of the film. In spite of the large lattice mismatch and different lattice geometry, it is possible to grow epitaxial Bi(111) films on Si(001) substrates, which are surprisingly smooth, relaxed and almost free of defects. Due to the two-fold symmetry of the substrates, the Bi(111) film is composed of crystallites rotated by 90 with respect to each other. Annealing of 6 nm film from 150 K to 450 K enables the formation of a periodic interfacial misfit dislocations, which accommodates a remaining lattice mismatch of 2.3 %. The surface/interface roughness and the bulk defect density of the film found to be extremely low, indicating the high crystalline quality of the film with atomically smooth surface and abrupt interface. Similar to the Bi films, Ag grows in a (111) orientation on Si(001) with two 90 rotated domains. The remaining strain of 2.2 % (tensile) is accommodated by the formation of an ordered network of dislocations. The Ag film exhibits atomically smooth surface. Those Bi films and Ag films were used as model systems to study the influence of the surface morphology on the electrical resistance. Surprisingly, all the Bi films (3-170 nm thicknesses) have shown an anomalous behavior of conductance with temperature and thickness. As in the case of doped semiconductor, the conductance increases exponentially from 150 K to 300 K and saturates at 350 K before finally decreasing with temperature. In situ measurements of the resistance during additional Bi deposition on the smooth Bi(111) films exhibit a square root dependent with coverage after a linear increase at very low coverage (1 % of a BL). During additional deposition of Bi, carriers are

Self-regulated growth of LaVO3 thin films by hybrid molecular beam epitaxy

International Nuclear Information System (INIS)

Zhang, Hai-Tian; Engel-Herbert, Roman; Dedon, Liv R.; Martin, Lane W.

2015-01-01

LaVO 3 thin films were grown on SrTiO 3 (001) by hybrid molecular beam epitaxy. A volatile metalorganic precursor, vanadium oxytriisopropoxide (VTIP), and elemental La were co-supplied in the presence of a molecular oxygen flux. By keeping the La flux fixed and varying the VTIP flux, stoichiometric LaVO 3 films were obtained for a range of cation flux ratios, indicating the presence of a self-regulated growth window. Films grown under stoichiometric conditions were found to have the largest lattice parameter, which decreased monotonically with increasing amounts of excess La or V. Energy dispersive X-ray spectroscopy and Rutherford backscattering measurements were carried out to confirm film compositions. Stoichiometric growth of complex vanadate thin films independent of cation flux ratios expands upon the previously reported self-regulated growth of perovskite titanates using hybrid molecular beam epitaxy, thus demonstrating the general applicability of this growth approach to other complex oxide materials, where a precise control over film stoichiometry is demanded by the application

Growth of Ge films by cluster beam deposition

CERN Document Server

Xu, J L; Feng, J Y

2002-01-01

Ge epitaxial layers with reasonable quality were grown on the Si(1 1 1) substrates by cluster beam deposition (CBD) process. The growth temperature plays a dominant role in the epitaxial growth of Ge films. The substrate temperature for epitaxial growth is about 500 deg. C, which is lower than the reported critical temperature of Ge epitaxial growth by MBE and CVD. A stress induced phase transition of Ge lattice from cubic to tetragonal is also observed in the CBD process, and the mechanism is discussed.

Growth of porous type anodic oxide films at micro-areas on aluminum exposed by laser irradiation

Energy Technology Data Exchange (ETDEWEB)

Kikuchi, Tatsuya [Graduate School of Engineering, Hokkaido University, N13-W8, Kita-Ku, Sapporo 060-8628 (Japan)], E-mail: kiku@eng.hokudai.ac.jp; Sakairi, Masatoshi [Graduate School of Engineering, Hokkaido University, N13-W8, Kita-Ku, Sapporo 060-8628 (Japan); Takahashi, Hideaki [Asahikawa National College of Technology, Syunkohdai, 2-2, 1-6, Asahikawa 071-8142 (Japan)

2009-11-30

Aluminum covered with pore-sealed anodic oxide films was irradiated with a pulsed Nd-YAG laser to remove the oxide film at micro-areas. The specimen was re-anodized for long periods to examine the growth of porous anodic oxide films at the area where substrate had been exposed by measuring current variations and morphological changes in the oxide during the re-anodizing. The chemical dissolution resistance of the pore-sealed anodic oxide films in an oxalic acid solution was also examined by measuring time-variations in rest potentials during immersion. The resistance to chemical dissolution of the oxide film became higher with increasing pore-sealing time and showed higher values at lower solution temperatures. During potentiostatic re-anodizing at five 35-{mu}m wide and 4-mm long lines for 72 h after the film was removed the measured current was found to increase linearly with time. Semicircular columnar-shaped porous type anodic oxide was found to form during the re-anodizing at the laser-irradiated area, and was found to grow radially, thus resulting in an increase in the diameter. After long re-anodizing, the central and top parts of the oxide protruded along the longitudinal direction of the laser-irradiated area. The volume expansion during re-anodizing resulted in the formation of cracks, parallel to the lines, in the oxide film formed during the first anodizing.

A nonlinear model for surface segregation and solute trapping during planar film growth

International Nuclear Information System (INIS)

Han, Xiaoying; Spencer, Brian J.

2007-01-01

Surface segregation and solute trapping during planar film growth is one of the important issues in molecular beam epitaxy, yet the study on surface composition has been largely restricted to experimental work. This paper introduces some mathematical models of surface composition during planar film growth. Analytical solutions are obtained for the surface composition during growth

Adsorption-controlled growth of BiMnO3 films by molecular-beam epitaxy

International Nuclear Information System (INIS)

Lee, J. H.; Ke, X.; Misra, R.; Schiffer, P.; Ihlefeld, J. F.; Mei, Z. G.; Liu, Z. K.; Xu, X. S.; Musfeldt, J. L.; Heeg, T.; Schlom, D. G.; Roeckerath, M.; Schubert, J.

2010-01-01

We have developed the means to grow BiMnO 3 thin films with unparalleled structural perfection by reactive molecular-beam epitaxy and determined its band gap. Film growth occurs in an adsorption-controlled growth regime. Within this growth window bounded by oxygen pressure and substrate temperature at a fixed bismuth overpressure, single-phase films of the metastable perovskite BiMnO 3 may be grown by epitaxial stabilization. X-ray diffraction reveals phase-pure and epitaxial films with ω rocking curve full width at half maximum values as narrow as 11 arc sec (0.003 deg. ). Optical absorption measurements reveal that BiMnO 3 has a direct band gap of 1.1±0.1 eV.

In situ spectroscopic ellipsometry as a surface sensitive tool to probe thin film growth

International Nuclear Information System (INIS)

Liu, C.

1999-01-01

Sputtered thin film and multilayer x-ray mirrors are made routinely at the Advanced Photon Source (APS) for the APS users. Precise film growth control and characterization are very critical in fabricating high-quality x-ray mirrors. Film thickness calibrations are carried out using in situ and ex situ spectroscopic ellipsometry, interferometry, and x-ray scattering. To better understand the growth and optical properties of different thin film systems, we have carried out a systematic study of sputtered thin films of Au, Rh, Pg Pd, Cu, and Cr, using in situ ellipsometry. Multiple data sets were obtained in situ for each film material with incremental thicknesses and were analyzed with their correlation in mind. We found that in situ spectroscopic ellipsometry as a surface-sensitive tool can also be used to probe the growth and morphology of the thin film system. This application of in situ spectroscopic ellipsometry for metal thin film systems will be discussed

Film growth kinetics and electric field patterning during electrospray deposition of block copolymer thin films

Science.gov (United States)

Toth, Kristof; Hu, Hanqiong; Choo, Youngwoo; Loewenberg, Michael; Osuji, Chinedum

The delivery of sub-micron droplets of dilute polymer solutions to a heated substrate by electrospray deposition (ESD) enables precisely controlled and continuous growth of block copolymer (BCP) thin films. Here we explore patterned deposition of BCP films by spatially varying the electric field at the substrate using an underlying charged grid, as well as film growth kinetics. Numerical analysis was performed to examine pattern fidelity by considering the trajectories of charged droplets during flight through imposed periodic field variations in the vicinity of the substrate. Our work uncovered an unexpected modality for improving the resolution of the patterning process via stronger field focusing through the use of a second oppositely charged grid beneath a primary focusing array, with an increase in highly localized droplet deposition on the intersecting nodes of the grid. Substrate coverage kinetics are considered for homopolymer deposition in the context of simple kinetic models incorporating temperature and molecular weight dependence of diffusivity. By contrast, film coverage kinetics for block copolymer depositions are additionally convoluted with preferential wetting and thickness-periodicity commensurability effects. NSF GRFP.

Young's Modulus and Coefficient of Linear Thermal Expansion of ZnO Conductive and Transparent Ultra-Thin Films

Directory of Open Access Journals (Sweden)

Naoki Yamamoto

2011-01-01

Full Text Available A new technique for measuring Young's modulus of an ultra-thin film, with a thickness in the range of about 10 nm, was developed by combining an optical lever technique for measuring the residual stress and X-ray diffraction for measuring the strain in the film. The new technique was applied to analyze the mechanical properties of Ga-doped ZnO (GZO films, that have become the focus of significant attention as a substitute material for indium-tin-oxide transparent electrodes. Young's modulus of the as-deposited GZO films decreased with thickness; the values for 30 nm and 500 nm thick films were 205 GPa and 117 GPa, respectively. The coefficient of linear thermal expansion of the GZO films was measured using the new technique in combination with in-situ residual stress measurement during heat-cycle testing. GZO films with 30–100 nm thickness had a coefficient of linear thermal expansion in the range of 4.3 × 10−6 – 5.6 × 10−6 °C−1.

The Non-Linear Effect of Corporate Taxes on Economic Growth

Directory of Open Access Journals (Sweden)

Huňady Ján

2015-03-01

Full Text Available The paper deals with the problem of taxation and its potential impact on economic growth and presents some new empirical insights into this topic. The main aim of the paper is to verify an assumed nonlinear impact of corporate tax rates on economic growth. Based on the theory of public finance and taxation, we hypothesize that at relatively low tax rates it is possible that the impact of taxation on economic growth become slightly positive. On the other hand when the tax rates are higher a negative impact of taxation on economic growth could be expected. Despite the fact that the most of the existing studies find a negative linear relationship between these variables, we can also find strong support for a non-linear relationship from several theoretical models as well as some empirical studies. Based on panel data fixed-effects econometric models, we, as well, find empirical evidence for a non-linear relationship between nominal and effective corporate tax rates and economic growth. Our data consists of annual observations for the period 1999 to 2011 for EU Member States. Based on the results, we also estimated the optimal level of the corporate tax rate in terms of maximizing economic growth in the average of the EU countries.

Metalorganic chemical vapor deposition of Er{sub 2}O{sub 3} thin films: Correlation between growth process and film properties

Energy Technology Data Exchange (ETDEWEB)

Giangregorio, Maria M. [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM sez. Bari, Via Orabona 4, 70125 Bari (Italy)], E-mail: michelaria.giangregorio@ba.imip.cnr.it; Losurdo, Maria; Sacchetti, Alberto; Capezzuto, Pio; Bruno, Giovanni [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM sez. Bari, Via Orabona 4, 70125 Bari (Italy)

2009-02-27

Er{sub 2}O{sub 3} thin films have been grown by metalorganic chemical vapor deposition (MOCVD) at 600 deg. C on different substrates, including glass, Si (100) and sapphire (0001) using tris(isopropylcyclopentadienyl)erbium and O{sub 2}. The effects of growth parameters such as the substrate, the O{sub 2} plasma activation and the temperature of organometallic precursor injection, on the nucleation/growth kinetics and, consequently, on film properties have been investigated. Specifically, very smooth (111)-oriented Er{sub 2}O{sub 3} thin films (the root mean square roughness is 0.3 nm) are achieved on Si (100), {alpha}-Al{sub 2}O{sub 3} (0001) and amorphous glass by MOCVD. Growth under O{sub 2} remote plasma activation results in an increase in growth rate and in (100)-oriented Er{sub 2}O{sub 3} films with high refractive index and transparency in the visible photon energy range.

Growth of AlN films and their characterization

Energy Technology Data Exchange (ETDEWEB)

Jain, Rakesh B.; Gao, Ying; Zhang, Jianping; Qhaleed Fareed, R.S.; Gaska, Remis [Sensor Electronic Technology, Inc., 1195 Atlas Rd., Columbia, SC 29209 (United States); Li, Jiawei; Arjunan, Arulchakkravarthi; Yang, Jinwei; Asif Khan, M. [Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208 (United States); Kuokstis, Edmundas [MTMI, Vilnius University, Vilnius (Lithuania)

2006-06-15

Single crystal AlN layers have been produced by migration enhanced metal organic chemical vapor deposition (MEMOCVD), hydride vapor phase epitaxy (HVPE) and their combination. The growth was carried out on 2'' basal plane sapphire substrates. In MEMOCVD, the duration and waveforms of precursors were varied to achieve better surface mobility and thus better atomic incorporation. It resulted in superior layer quality templates with the narrowest (002) X-ray rocking curve full width half maximum (FWHM). Such high quality AlN templates were used as seeds for subsequent HVPE growth. Thick films with thickness ranging from 1-25 {mu}m have been grown by HVPE with growth rates as high as 200 {mu}m/min, highest ever reported. Films grown by the two methods have been extensively characterized by Nomarski microscopy, scanning electron microscopy (SEM), atomic force microscopy (AFM), high-resolution X-ray diffractometry (HRXRD), and photoluminescence (PL). (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Characterization of Kerfless Linear Arrays Based on PZT Thick Film.

Science.gov (United States)

Zawada, Tomasz; Bierregaard, Louise Moller; Ringgaard, Erling; Xu, Ruichao; Guizzetti, Michele; Levassort, Franck; Certon, Dominique

2017-09-01

Multielement transducers enabling novel cost-effective fabrication of imaging arrays for medical applications have been presented earlier. Due to the favorable low lateral coupling of the screen-printed PZT, the elements can be defined by the top electrode pattern only, leading to a kerfless design with low crosstalk between the elements. The thick-film-based linear arrays have proved to be compatible with a commercial ultrasonic scanner and to support linear array beamforming as well as phased array beamforming. The main objective of the presented work is to investigate the performance of the devices at the transducer level by extensive measurements of the test structures. The arrays have been characterized by several different measurement techniques. First, electrical impedance measurements on several elements in air and liquid have been conducted in order to support material parameter identification using the Krimholtz-Leedom-Matthaei model. It has been found that electromechanical coupling is at the level of 35%. The arrays have also been characterized by a pulse-echo system. The measured sensitivity is around -60 dB, and the fractional bandwidth is close to 60%, while the center frequency is about 12 MHz over the whole array. Finally, laser interferometry measurements have been conducted indicating very good displacement level as well as pressure. The in-depth characterization of the array structure has given insight into the performance parameters for the array based on PZT thick film, and the obtained information will be used to optimize the key parameters for the next generation of cost-effective arrays based on piezoelectric thick film.

Visualization modeling of thin film growth in photodeposition processes

International Nuclear Information System (INIS)

Mirchin, N.; Sidi, M.; Muchnik, Y.; Peled, A.

2003-01-01

A computer visualization technique, which analyzes and predicts the spatio-temporal evolution of thin film deposition and growth processes is given. It relies on microscopy sampled or computer generated synthetic micrographs of particles. These are then simulated for deposition, aggregation and coagulation during thin film growth by frequency domain transform techniques. Particle sources and diffusion operators on surfaces are used to predict with high temporal resolution, unattained by real world microscopy the surface structure evolution as time samples and time movies. The simulation program was used to investigate deposition and diffusive profiles in photodeposition experiments, starting from initial synthetic micrographs based on real world scanning electron microscopy (SEM) images. The surface microstructure time 'tracking' scheme described here relies on transforming the original image of the deposited particles into a Fourier spatial frequency domain image. The physical models used are that of a material random deposition source and subsequent surface redistribution due to diffusion and other coalescence material surface flow mechanisms. The 2-D inverse Fourier transform (IFT) is finally used to obtain back the real space-time images representing the surface spatio-temporal films morphology changes. False color representation of the images allows for a better discrimination of the films growing details especially during the fast pre-compact thin film layer formation on the substrate

Linear magnetoresistance and surface to bulk coupling in topological insulator thin films.

Science.gov (United States)

Singh, Sourabh; Gopal, R K; Sarkar, Jit; Pandey, Atul; Patel, Bhavesh G; Mitra, Chiranjib

2017-12-20

We explore the temperature dependent magnetoresistance of bulk insulating topological insulator thin films. Thin films of Bi 2 Se 2 Te and BiSbTeSe 1.6 were grown using the pulsed laser deposition technique and subjected to transport measurements. Magnetotransport measurements indicate a non-saturating linear magnetoresistance (LMR) behavior at high magnetic field values. We present a careful analysis to explain the origin of LMR taking into consideration all the existing models of LMR. Here we consider that the bulk insulating states and the metallic surface states constitute two parallel conduction channels. Invoking this, we were able to explain linear magnetoresistance behavior as a competition between these parallel channels. We observe that the cross-over field, where LMR sets in, decreases with increasing temperature. We propose that this cross-over field can be used phenomenologically to estimate the strength of surface to bulk coupling.

Perovskite Oxide Thin Film Growth, Characterization, and Stability

Science.gov (United States)

Izumi, Andrew

Studies into a class of materials known as complex oxides have evoked a great deal of interest due to their unique magnetic, ferroelectric, and superconducting properties. In particular, materials with the ABO3 perovskite structure have highly tunable properties because of the high stability of the structure, which allows for large scale doping and strain. This also allows for a large selection of A and B cations and valences, which can further modify the material's electronic structure. Additionally, deposition of these materials as thin films and superlattices through techniques such as pulsed laser deposition (PLD) results in novel properties due to the reduced dimensionality of the material. The novel properties of perovskite oxide heterostructures can be traced to a several sources, including chemical intermixing, strain and defect formation, and electronic reconstruction. The correlations between microstructure and physical properties must be investigated by examining the physical and electronic structure of perovskites in order to understand this class of materials. Some perovskites can undergo phase changes due to temperature, electrical fields, and magnetic fields. In this work we investigated Nd0.5Sr 0.5MnO3 (NSMO), which undergoes a first order magnetic and electronic transition at T=158K in bulk form. Above this temperature NSMO is a ferromagnetic metal, but transitions into an antiferromagnetic insulator as the temperature is decreased. This rapid transition has interesting potential in memory devices. However, when NSMO is deposited on (001)-oriented SrTiO 3 (STO) or (001)-oriented (LaAlO3)0.3-(Sr 2AlTaO6)0.7 (LSAT) substrates, this transition is lost. It has been reported in the literature that depositing NSMO on (110)-oriented STO allows for the transition to reemerge due to the partial epitaxial growth, where the NSMO film is strained along the [001] surface axis and partially relaxed along the [11¯0] surface axis. This allows the NSMO film enough

Diamond film growth with modification properties of adhesion between substrate and diamond film

Directory of Open Access Journals (Sweden)

Setasuwon P.

2004-03-01

Full Text Available Diamond film growth was studied using chemical vapor deposition (CVD. A special equipment was build in-house, employing a welding torch, and substrate holder with a water-cooling system. Acetylene and oxygen were used as combustion gases and the substrate was tungsten carbide cobalt. It was found that surface treatments, such as diamond powder scratching or acid etching, increase the adhesion and prevent the film peel-off. Diamond powder scratching and combined diamond powder scratching with acid etching gave the similar diamond film structure with small grain and slightly rough surface. The diamond film obtained with both treatments has high adhesion and can withstand internal stress better than ones obtained by untreated surface or acid etching alone. It was also found that higher substrate temperature produced smoother surface and more uniform diamond grain.

Biodegradable and bioactive CGP/PVA film for fungal growth inhibition.

Science.gov (United States)

Silva, Bárbara Dumas S; Ulhoa, Cirano J; Batista, Karla A; Di Medeiros, Maria Carolina; Da Silva Filho, Rômulo Roosevelt; Yamashita, Fabio; Fernandes, Kátia F

2012-07-01

In this study, chitinolytic enzymes produced by Trichoderma asperellum were immobilized on a biodegradable film manufactured with a blend of cashew gum polysaccharide (CGP) and polyvinyl alcohol (PVA), and tested as a fungal growth inhibitor. The film was produced by casting a blend of CGP and PVA solution on glass molds. The CGP/PVA film showed 68% water solubility, tensile strength of 23.7 MPa, 187.2% elongation and 52% of mass loss after 90 days in soil. The presence of T-CWD enzymes immobilized by adsorption or covalent attachment resulted in effective inhibition of fungal growth. Sclerotinia sclerotiorum was the most sensitive organism, followed by Aspergillus niger and Penicillium sp. SEM micrograph showed that the presence of immobilized T-CWD enzymes on CGP/PVA film produced morphological modifications on vegetative and germinative structures of the microorganisms, particularly hyphae disruption and changes of spores shape. Copyright © 2012 Elsevier Ltd. All rights reserved.

Intrinsic stress evolution during amorphous oxide film growth on Al surfaces

International Nuclear Information System (INIS)

Flötotto, D.; Wang, Z. M.; Jeurgens, L. P. H.; Mittemeijer, E. J.

2014-01-01

The intrinsic stress evolution during formation of ultrathin amorphous oxide films on Al(111) and Al(100) surfaces by thermal oxidation at room temperature was investigated in real-time by in-situ substrate curvature measurements and detailed atomic-scale microstructural analyses. During thickening of the oxide a considerable amount of growth stresses is generated in, remarkably even amorphous, ultrathin Al 2 O 3 films. The surface orientation-dependent stress evolutions during O adsorption on the bare Al surfaces and during subsequent oxide-film growth can be interpreted as a result of (i) adsorption-induced surface stress changes and (ii) competing processes of free volume generation and structural relaxation, respectively

Thin films growth parameters in MAPLE; application to fibrinogen

International Nuclear Information System (INIS)

Jelinek, M; Cristescu, R; Kocourek, T; Vorlicek, V; Remsa, J; Stamatin, L; Mihaiescu, D; Stamatin, I; Mihailescu, I N; Chrisey, D B

2007-01-01

Increasingly requirements on the thin film quality of functionalized materials are efficiently met by a novel laser processing technique - Matrix Assisted Pulsed Laser Evaporation (MAPLE). Examples of deposition conditions and main features characteristic to film growth rate of MAPLE-fabricated organic materials are summarized. MAPLE experimental results are compared with ones corresponding to the classical Pulsed Laser Deposition (PLD). In particular, the results of investigation of MAPLE-deposited fibrinogen blood protein thin films using a KrF* excimer laser and characterized by FTIR and Raman spectrometry are reported

Morphological analysis of co-evaporated blend films based on initial growth for organic photovoltaics

Energy Technology Data Exchange (ETDEWEB)

Shibata, Yosei, E-mail: yosei.shibata@aist.go.jp [Research Center for Photovoltaic Technologies, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565 (Japan); Taima, Tetsuya [Research Center for Photovoltaic Technologies, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565 (Japan); Japan Science and Technology Agency, PRESTO, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012 (Japan); Zhou, Ying; Ohashi, Noboru; Kono, Takahiro [Research Center for Photovoltaic Technologies, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565 (Japan); Yoshida, Yuji, E-mail: yuji.yoshida@aist.go.jp [Research Center for Photovoltaic Technologies, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565 (Japan)

2015-11-15

Graphical abstract: - Highlights: • Initial growth mode of co-evaporated films was observed. • Balanced crystal growth leads to improvement of photovoltaic performance. • Crystal growth of fullerene during co-evaporation process was restricted. • The power conversion efficiency of 3% was obtained without electron blocking layer. - Abstract: Bulk heterojunction structures composed of electron donor and acceptor molecules for application in high-performance organic photovoltaics studied. To fabricate these structures, the co-evaporation method in vacuum is commonly applied; however, the details of the crystal growth process during co-evaporation have not yet been established. Here, we focused on structural analysis of blend films composed of phthalocyanine and fullerene based on initial growth stage. Similar crystal growth behavior to that typically observed in single-component molecules is obtained for the films. These results suggest that the competitive crystal growth between donors and acceptors occurs during co-evaporation process. The balance of thin film growth among donor and acceptor molecules can be related to improved photovoltaic performance. The homogeneous blend structure leads to improvement of the power conversion efficiency from 1.2% to 3.0%.

Growth of high-quality large-area MgB2 thin films by reactive evaporation

International Nuclear Information System (INIS)

Moeckly, B H; Ruby, W S

2006-01-01

We report a new in situ reactive deposition thin film growth technique for the production of MgB 2 thin films which offers several advantages over all existing methods and is the first deposition method to enable the production of high-quality MgB 2 films for real-world applications. We have used this growth method, which incorporates a rotating pocket heater, to deposit MgB 2 films on a variety of substrates, including single-crystalline, polycrystalline, metallic, and semiconductor materials up to 4 inch in diameter. This technique allows growth of double-sided, large-area films in the intermediate temperature range of 400-600 deg. C. These films are clean, well-connected, and consistently display T c values of 38-39 K with low resistivity and residual resistivity values. They are also robust and uncommonly stable upon exposure to atmosphere and water. (rapid communication)

Linear least-squares method for global luminescent oil film skin friction field analysis

Science.gov (United States)

Lee, Taekjin; Nonomura, Taku; Asai, Keisuke; Liu, Tianshu

2018-06-01

A data analysis method based on the linear least-squares (LLS) method was developed for the extraction of high-resolution skin friction fields from global luminescent oil film (GLOF) visualization images of a surface in an aerodynamic flow. In this method, the oil film thickness distribution and its spatiotemporal development are measured by detecting the luminescence intensity of the thin oil film. From the resulting set of GLOF images, the thin oil film equation is solved to obtain an ensemble-averaged (steady) skin friction field as an inverse problem. In this paper, the formulation of a discrete linear system of equations for the LLS method is described, and an error analysis is given to identify the main error sources and the relevant parameters. Simulations were conducted to evaluate the accuracy of the LLS method and the effects of the image patterns, image noise, and sample numbers on the results in comparison with the previous snapshot-solution-averaging (SSA) method. An experimental case is shown to enable the comparison of the results obtained using conventional oil flow visualization and those obtained using both the LLS and SSA methods. The overall results show that the LLS method is more reliable than the SSA method and the LLS method can yield a more detailed skin friction topology in an objective way.

Effect of negative bias voltage on CrN films deposited by arc ion plating. I. Macroparticles filtration and film-growth characteristics

International Nuclear Information System (INIS)

Wang Qimin; Kim, Kwang Ho

2008-01-01

Chromium nitride (CrN) films were deposited on Si wafers by arc ion plating (AIP) at various negative bias voltages and several groups of N 2 /Ar gas flux ratios and chamber gas pressures. The authors systematically investigated the influence of negative bias voltage on the synthesis, composition, microstructure, and properties of the AIP CrN films. In this part (Part I), the investigations were mainly focused on the macroparticle distributions and film-growth characteristics. The results showed that macroparticle densities on the film surfaces decreased greatly by applying negative bias voltage, which can be affected by partial pressure of N 2 and Ar gases. From the statistical analysis of the experimental results, they proposed a new hybrid mechanism of ion bombardment and electrical repulsion. Also, the growth of the AIP CrN films was greatly altered by applying negative bias voltage. By increasing the bias voltage, the film surfaces became much smoother and the films evolved from apparent columnar microstructures to an equiaxed microstructure. The impinging high-energy Cr ions accelerated by negative bias voltages were deemed the inherent reason for the evolution of growth characteristics

Epitaxial thin film growth of LiH using a liquid-Li atomic template

International Nuclear Information System (INIS)

Oguchi, Hiroyuki; Ikeshoji, Tamio; Orimo, Shin-ichi; Ohsawa, Takeo; Shiraki, Susumu; Hitosugi, Taro; Kuwano, Hiroki

2014-01-01

We report on the synthesis of lithium hydride (LiH) epitaxial thin films through the hydrogenation of a Li melt, forming abrupt LiH/MgO interface. Experimental and first-principles molecular dynamics studies reveal a comprehensive microscopic picture of the crystallization processes, which sheds light on the fundamental atomistic growth processes that have remained unknown in the vapor-liquid-solid method. We found that the periodic structure that formed, because of the liquid-Li atoms at the film/MgO-substrate interface, serves as an atomic template for the epitaxial growth of LiH crystals. In contrast, films grown on the Al 2 O 3 substrates indicated polycrystalline films with a LiAlO 2 secondary phase. These results and the proposed growth process provide insights into the preparation of other alkaline metal hydride thin films on oxides. Further, our investigations open the way to explore fundamental physics and chemistry of metal hydrides including possible phenomena that emerge at the heterointerfaces of metal hydrides

Growth and structure of thermally evaporated Bi{sub 2}Te{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Rogacheva, E.I., E-mail: rogacheva@kpi.kharkov.ua [National Technical University “Kharkov Polytechnic Institute”, 21 Frunze St., Kharkov 61002 (Ukraine); Budnik, A.V. [National Technical University “Kharkov Polytechnic Institute”, 21 Frunze St., Kharkov 61002 (Ukraine); Dobrotvorskaya, M.V.; Fedorov, A.G.; Krivonogov, S.I.; Mateychenko, P.V. [Institute for Single Crystals of NAS of Ukraine, 60 Lenin Prospect, Kharkov 61001 (Ukraine); Nashchekina, O.N.; Sipatov, A.Yu. [National Technical University “Kharkov Polytechnic Institute”, 21 Frunze St., Kharkov 61002 (Ukraine)

2016-08-01

The growth mechanism, microstructure, and crystal structure of the polycrystalline n-Bi{sub 2}Te{sub 3} thin films with thicknesses d = 15–350 nm, prepared by thermal evaporation in vacuum onto glass substrates, were studied. Bismuth telluride with Te excess was used as the initial material for the thin film preparation. The thin film characterization was performed using X-ray diffraction, X-ray photoelectron spectroscopy, energy-dispersive X-ray spectroscopy, scan electron microscopy, and electron force microscopy. It was established that the chemical composition of the prepared films corresponded rather well to the starting material composition and the films did not contain any phases apart from Bi{sub 2}Te{sub 3}. It was shown that the grain size and the film roughness increased with increasing film thickness. The preferential growth direction changed from [00l] to [015] under increasing d. The X-ray photoelectron spectroscopy studies showed that the thickness of the oxidized surface layer did not exceed 1.5–2.0 nm and practically did not change in the process of aging at room temperature, which is in agreement with the results reported earlier for single crystals. The obtained data show that using simple and inexpensive method of thermal evaporation in vacuum and appropriate technological parameters, one can grow n-Bi{sub 2}Te{sub 3} thin films of a sufficiently high quality. - Highlights: • The polycrystalline n-Bi{sub 2}Te{sub 3} thin films were grown thermal evaporation onto glass. • The growth mechanism and film structure were studied by different structure methods. • The grain size and film roughness increased with increasing film thickness. • The growth direction changes from [00l] to [015] under film thickness increasing. • The oxidized layer thickness (1–2 nm) did not change under aging at room temperature.

Visualization modeling of thin film growth in photodeposition processes

Energy Technology Data Exchange (ETDEWEB)

Mirchin, N.; Sidi, M.; Muchnik, Y.; Peled, A

2003-03-15

A computer visualization technique, which analyzes and predicts the spatio-temporal evolution of thin film deposition and growth processes is given. It relies on microscopy sampled or computer generated synthetic micrographs of particles. These are then simulated for deposition, aggregation and coagulation during thin film growth by frequency domain transform techniques. Particle sources and diffusion operators on surfaces are used to predict with high temporal resolution, unattained by real world microscopy the surface structure evolution as time samples and time movies. The simulation program was used to investigate deposition and diffusive profiles in photodeposition experiments, starting from initial synthetic micrographs based on real world scanning electron microscopy (SEM) images. The surface microstructure time 'tracking' scheme described here relies on transforming the original image of the deposited particles into a Fourier spatial frequency domain image. The physical models used are that of a material random deposition source and subsequent surface redistribution due to diffusion and other coalescence material surface flow mechanisms. The 2-D inverse Fourier transform (IFT) is finally used to obtain back the real space-time images representing the surface spatio-temporal films morphology changes. False color representation of the images allows for a better discrimination of the films growing details especially during the fast pre-compact thin film layer formation on the substrate.

Influence of magnetic flutter on tearing growth in linear and nonlinear theory

Science.gov (United States)

Kreifels, L.; Hornsby, W. A.; Weikl, A.; Peeters, A. G.

2018-06-01

Recent simulations of tearing modes in turbulent regimes show an unexpected enhancement in the growth rate. In this paper the effect is investigated analytically. The enhancement is linked to the influence of turbulent magnetic flutter, which is modelled by diffusion terms in magnetohydrodynamics (MHD) momentum balance and Ohm’s law. Expressions for the linear growth rate as well as the island width in nonlinear theory for small amplitudes are derived. The results indicate an enhanced linear growth rate and a larger linear layer width compared with resistive MHD. Also the island width in the nonlinear regime grows faster in the diffusive model. These observations correspond well to simulations in which the effect of turbulence on the magnetic island width and tearing mode growth is analyzed.

Growth and Analysis of Highly Oriented (11n) BCSCO Films for Device Research

Science.gov (United States)

Raina, K. K.; Pandey, R. K.

1995-01-01

Films of BCSCO superconductor of the type Bi2CaSr2Cu2O(x), have been grown by liquid phase epitaxy method (LPE), using a partially closed growth chamber. The films were grown on (001) and (110) NdGaO3 substrates by slow cooling process in an optimized temperature range below the peritectic melting point (880 C) of Bi2CaSr2Cu2O8. Optimization of parameters, such as seed rotation, soak of initial growth temperature and growth period results in the formation of 2122 phase BCSCO films. The films grown at rotation rates of less than 30 and more than 70 rpm are observed to be associated with the second phase of Sr-Ca-Cu-O system. Higher growth temperatures (greater than 860 C) also encourage to the formation of this phase. XRD measurements show that the films grown on (110) NdGaO3 have a preferred (11n)-orientation. It is pertinent to mention here that in our earlier results published elsewhere we obtained c-axis oriented Bi2CaSr2Cu2O8 phase films on (001) NdGaO3 substrate. Critical current density is found to be higher for the films grown on (110) than (001) NdGaO3 substrate orientation. The best values, zero resistance (T(sab co)) and critical current density obtained are 87 K and 10(exp 5) A/sq cm respectively.

Growth and analysis of highly oriented (11n) BCSCO films for device research

International Nuclear Information System (INIS)

Raina, K.K.; Pandey, R.K.

1994-01-01

Films of BCSCO superconductor of the type Bi 2 CaSr 2 Cu 2 O x have been grown by liquid phase epitaxy method (LPE), using a partially closed growth chamber. The films were grown on (001) and (110) NdGaO 3 substrates by slow cooling process in an optimized temperature range below the peritectic melting point (880 degrees C) of Bi 2 CaSr 2 Cu 2 O 8 . Optimization of parameters, such as seed rotation, soak of initial growth temperature and growth period results in the formation of 2122 phase BCSCO films. The films grown at rotation rates of less than 30 and more than 70 rpm are observed to be associated with the second phase of Sr-Ca-Cu-O system. Higher growth temperatures (>860 degrees C) also encourage to the formation of this phase. XRD measurements show that the films grown on (110) NdGaO 3 have a preferred (11n)-orientation. It is pertinent to mention here that in our earlier results published elsewhere we obtained c-axis oriented Bi 2 CaSr 2 Cu 2 O 8 phase films on (001) NdGaO 3 substrate. Critical current density is found to be higher for the films grown on (110) than (001) NdGaO 3 substrate orientation. The best values of zero resistance (T co ) and critical current density obtained are 87 K and 10 5 A/cm 2 , respectively

Growth of high quality large area MgB2 thin films by reactive evaporation

OpenAIRE

Moeckly, Brian H.; Ruby, Ward S.

2006-01-01

We report a new in-situ reactive deposition thin film growth technique for the production of MgB2 thin films which offers several advantages over all existing methods and is the first deposition method to enable the production of high-quality MgB2 films for real-world applications. We have used this growth method, which incorporates a rotating pocket heater, to deposit MgB2 films on a variety of substrates, including single-crystalline, polycrystalline, metallic, and semiconductor materials u...

Effects of thermal treatment on the anodic growth of tungsten oxide films

Energy Technology Data Exchange (ETDEWEB)

Chai, Y., E-mail: yqchai85@gmail.com; Tam, C.W.; Beh, K.P.; Yam, F.K.; Hassan, Z.

2015-08-03

This work reports the investigation of the effects of thermal treatment on anodic growth tungsten oxide (WO{sub 3}). The increase of the thermal treatment temperature above 400 °C significantly influences WO{sub 3} film where high porosity structure reduces to more compact film. As-grown film is amorphous, which transforms to monoclinic/orthorhombic phase upon annealing at 300–600 °C. With the reducing of porous structure, preferential growth of (002) plane shifts to (020) plane at 600 °C with more than twentyfold increase of peak's intensity compared to the film annealed at 500 °C. Films annealed at low thermal treatment show better ion intercalation and reversibility during electrochemical measurements; however, it has larger optical band gap. Photoelectrochemical measurement reveals that film annealed at 400 °C exhibits the best photocatalytic performance among the films annealed at 300–600 °C. - Highlights: • Porosity of the WO{sub 3} reduces as annealing temperature increases above 400 °C. • As-grown film is amorphous which transforms to monoclinic/orthorhombic upon annealing. • As-grown film shows better ion intercalation in electrochemical process. • Optical band gap of WO{sub 3} reduces as the annealing temperature increases. • Film annealed at 400 °C exhibits best photocatalytic performance.

Reliability growth of thin film resistors contact

Directory of Open Access Journals (Sweden)

Lugin A. N.

2010-10-01

Full Text Available Necessity of resistive layer growth under the contact and in the contact zone of resistive element is shown in order to reduce peak values of current flow and power dissipation in the contact of thin film resistor, thereby to increase the resistor stability to parametric and catastrophic failures.

Surface structure deduced differences of copper foil and film for graphene CVD growth

Energy Technology Data Exchange (ETDEWEB)

Tian, Junjun [School of Chemistry and Chemical Engineering, Chongqing University, Chongqing 400044 (China); Hu, Baoshan, E-mail: hubaoshan@cqu.edu.cn [School of Chemistry and Chemical Engineering, Chongqing University, Chongqing 400044 (China); Wei, Zidong; Jin, Yan [School of Chemistry and Chemical Engineering, Chongqing University, Chongqing 400044 (China); Luo, Zhengtang [Department of Chemical and Biomolecular Engineering, The Hongkong University of Science and Technology, Kowloon (Hong Kong); Xia, Meirong [School of Chemistry and Chemical Engineering, Chongqing University, Chongqing 400044 (China); Pan, Qingjiang [Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education, Heilongjiang University, Harbin 150080 (China); Liu, Yunling [State Key Laboratory of Inorganic Synthesis and Preparative Chemistry, College of Chemistry, Jilin University, Changchun 130012 (China)

2014-05-01

Highlights: • We demonstrate the significant differences between Cu foil and film in the surface morphology and crystal orientation distribution. • The different surface structure leads to the distinctive influences of the CH₄ and H₂ concentrations on the thickness and quality of as-grown graphene. • Nucleation densities and growth rate differences at the initial growth stages on the Cu foil and film were investigated and discussed. Abstract: Graphene was synthesized on Cu foil and film by atmospheric pressure chemical vapor deposition (CVD) with CH₄ as carbon source. Electron backscattered scattering diffraction (EBSD) characterization demonstrates that the Cu foil surface after the H₂-assisted pre-annealing was almost composed of Cu(1 0 0) crystal facet with larger grain size of ~100 μm; meanwhile, the Cu film surface involved a variety of crystal facets of Cu(1 1 1), Cu(1 0 0), and Cu(1 1 0), with the relatively small grain size of ~10 μm. The different surface structure led to the distinctive influences of the CH₄ and H₂ concentrations on the thickness and quality of as-grown graphene. Further data demonstrate that the Cu foil enabled more nucleation densities and faster growth rates at the initial growth stages than the Cu film. Our results are beneficial for understanding the relationship between the metal surface structure and graphene CVD growth.

Growth of group III nitride films by pulsed electron beam deposition

International Nuclear Information System (INIS)

Ohta, J.; Sakurada, K.; Shih, F.-Y.; Kobayashi, A.; Fujioka, H.

2009-01-01

We have grown group III nitride films on Al 2 O 3 (0 0 0 1), 6H-SiC (0 0 0 1), and ZnO (0001-bar) substrates by pulsed electron beam deposition (PED) for the first time and investigated their characteristics. We found that c-plane AlN and GaN grow epitaxially on these substrates. It has been revealed that the growth of GaN on atomically flat 6H-SiC substrates starts with the three-dimensional mode and eventually changes into the two-dimensional mode. The GaN films exhibited strong near-band-edge emission in their room temperature photoluminescence spectra. We also found that the use of PED allows us to reduce the epitaxial growth temperature for GaN down to 200 deg. C. - Graphical abstract: We have grown group III nitride films by pulsed electron beam deposition (PED) and found that the films of group III nitrides grow epitaxially on 6H-SiC and Al 2 O 3 substrates. We also found that the use of PED allows us to reduce the epitaxial growth temperature for GaN down to 200 deg. C.

TTF/TCNQ-based thin films and microcrystals. Growth and charge transport phenomena

Energy Technology Data Exchange (ETDEWEB)

Solovyeva, Vita

2011-05-26

The thesis adresses several problems related to growth and charge transport phenomena in thin films of TTF-TCNQ and (BEDT-TTF)TCNQ. The following main new problems are addressed: - The influence of thin-film specific factors, such as the substrate material and growth-induced defects, on the Peierls transition temperature in TTF-TCNQ thin films was studied; - finite-size effects in TTF-TCNQ were investigated by considering transport properties in TTF-TCNQ microcrystals. The influence of the size of the crystal on the Peierls transition temperature was studied. In this context a new method of microcontact fabrication was employed to favor the measurements; - an analysis of radiation-induced defects in TTF-TCNQ thin films and microcrystals was performed. It was demonstrated than an electron beam can induce appreciable damage to the sample such that its electronic properties are strongly modified; - a bilayer growth method was established to fabricate (BEDT-TTF)TCNQ from the gas phase. This newly developed bilayer growth method was showed to be suitable for testing (BEDT-TTF)TCNQ charge-transfer phase formation; - the structure of the formed (BEDT-TTF)TCNQ charge-transfer compounds was analyzed by using a wide range of experimental techniques. An overview and the description of the basic physical principles underlying charge-transfer compounds is given in chapter 2. Experimental techniques used for the growth and characterization of thin films and microcrystals are presented in chapter 3. Chapter 4 gives an overview of the physical properties of the studied organic materials. Chapter 5 discussed the experimental study of TTF-TCNQ thin films. he Peierls transition in TTF-TCNQ is a consequence of the quasi-one-dimensional structure of the material and depends on different factors, studied in chapters 5 and 6. In contradistinction to TTF-TTCNQ, the (BEDT-TTF)TCNQ charge-transfer compound crystallizes in several different modifications with different physical properties

Effect of enhanced C2 growth chemistry on nanodiamond film deposition

International Nuclear Information System (INIS)

Teii, Kungen; Ikeda, Tomohiro

2007-01-01

A route to high-purity nanocrystalline diamond films from C 2 dimers and related mechanisms have been investigated by enhancing C 2 growth chemistry in Ar-rich microwave plasmas. Efficient C 2 production by direct dissociation from acetylene causes the micro- to nanocrystal transition with a low threshold Ar concentration of ∼70% and produces films of ∼20 nm grains with a distinct visible-Raman peak of diamond. C 2 grows nanodiamond on diamond surfaces but rarely initiates nucleation on foreign surfaces. The phase purity can be improved by increasing the dominance of nanodiamond growth from C 2 over nondiamond growth from CH x (x=0-3) and large radicals

Molecular dynamics simulation about porous thin-film growth in secondary deposition

International Nuclear Information System (INIS)

Chen Huawei; Tieu, A. Kiet; Liu Qiang; Hagiwara, Ichiro; Lu Cheng

2007-01-01

The thin film growth has been confirmed to be assembled by an enormous number of clusters in experiments of CVD. Sequence of clusters' depositions proceeds to form the thin film at short time as gas fluids through surface of substrate. In order to grow condensed thin film using series of cluster deposition, the effect of initial velocity, substrate temperature and density of clusters on property of deposited thin film, especially appearance of nanoscale pores inside thin film must be investigated. In this simulation, three different cluster sizes of 203, 653, 1563 atoms with different velocities (0, 10, 100, 1000 and 3000 m/s) were deposited on a Cu(0 0 1) substrate whose temperatures were set between 300 and 1000 K. Four clusters and one cluster were used in primary deposition and secondary deposition, respectively. We have clarified that adhesion between clusters and substrate is greatly influenced by initial velocity. As a result, the exfoliation pattern of deposited thin film is dependent on initial velocity and different between them. One borderline dividing whole region into porous region and nonporous region are obtained to show the effect of growth conditions on appearance of nanoscale pores inside thin film. Moreover, we have also shown that the likelihood of porous thin film is dependent on the point of impact of a cluster relative to previously deposited clusters

Molecular dynamics simulation about porous thin-film growth in secondary deposition

Energy Technology Data Exchange (ETDEWEB)

Chen Huawei [School of Mechanical Engineering and Automation, Beihang University, No. 37 Xuyuan Road, Haidian District, Beijing (China) and Mechanical Materials and Mechatronic Engineering, University of Wollongong, Northfields Avenue, NSW 2522 (Australia)]. E-mail: chen_hua_wei@yahoo.com; Tieu, A. Kiet [Mechanical Materials and Mechatronic Engineering, University of Wollongong, Northfields Avenue, NSW 2522 (Australia); Liu Qiang [School of Mechanical Engineering and Automation, Beihang University, No. 37 Xuyuan Road, Haidian District, Beijing (China); Hagiwara, Ichiro [Department of Mechanical Sciences and Engineering, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo (Japan); Lu Cheng [Mechanical Materials and Mechatronic Engineering, University of Wollongong, Northfields Avenue, NSW 2522 (Australia)

2007-07-15

The thin film growth has been confirmed to be assembled by an enormous number of clusters in experiments of CVD. Sequence of clusters' depositions proceeds to form the thin film at short time as gas fluids through surface of substrate. In order to grow condensed thin film using series of cluster deposition, the effect of initial velocity, substrate temperature and density of clusters on property of deposited thin film, especially appearance of nanoscale pores inside thin film must be investigated. In this simulation, three different cluster sizes of 203, 653, 1563 atoms with different velocities (0, 10, 100, 1000 and 3000 m/s) were deposited on a Cu(0 0 1) substrate whose temperatures were set between 300 and 1000 K. Four clusters and one cluster were used in primary deposition and secondary deposition, respectively. We have clarified that adhesion between clusters and substrate is greatly influenced by initial velocity. As a result, the exfoliation pattern of deposited thin film is dependent on initial velocity and different between them. One borderline dividing whole region into porous region and nonporous region are obtained to show the effect of growth conditions on appearance of nanoscale pores inside thin film. Moreover, we have also shown that the likelihood of porous thin film is dependent on the point of impact of a cluster relative to previously deposited clusters.

Non-linear self-reinforced growth of tearing modes with multiple rational surfaces

International Nuclear Information System (INIS)

Maschke, E.K.; Persson, M.; Dewar, R.L.; Australian National Univ., Canberra, ACT

1993-06-01

The non-linear evolution of tearing modes with multiple rational surfaces is discussed. It is demonstrated that, in the presence of small differential rotation, the non-linear growth might be faster than exponential. This growth occurs as the rotation frequencies of the plasma at the different rational surfaces go into equilibrium

Growth of HfO{sub x} thin films by reactive molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Hildebrandt, Erwin; Kurian, Jose; Alff, Lambert [Institut fuer Materialwissenschaft, TU Darmstadt (Germany)

2008-07-01

Thin films of hafnium oxide were grown on single crystal r-cut and c-cut sapphire by reactive molecular beam epitaxy. The conditions for the growth of single oriented hafnium oxide thin films have been established. Hafnium oxide thin films were characterized by X-ray diffraction and optical absorption measurements. It was found that hafnium oxide thin films grown on r-cut sapphire were (00l) oriented whereas, on c-cut sapphire, hafnium oxide films showed different orientations depending on the growth temperature and oxidation conditions. The hafnium oxide films grown at higher temperature and under strong oxidation conditions yielded (001) oriented films on c-cut sapphire whereas slightly weaker oxidation condition leads to (111) oriented hafnium oxide films. The bandgap deducted from optical absorption measurement carried out on hafnium oxide films grown under optimized conditions agreed well with the values reported in literature. A range of oxygen deficient thin films of hafnium oxide were also grown on single crystal sapphire substrates in order to investigate the effect of oxygen vacancies on dielectric properties of hafnium oxide. The oxygen deficient thin films of hafnium oxide show a decrease in bandgap with increase in oxygen deficiency.

Magnesium growth in magnesium deuteride thin films during deuterium desorption

Energy Technology Data Exchange (ETDEWEB)

Checchetto, R., E-mail: riccardo.checchetto@unitn.it [Dipartimento di Fisica and CNISM, Università di Trento, Via Sommarive 14, I-38123 Trento (Italy); Miotello, A. [Dipartimento di Fisica and CNISM, Università di Trento, Via Sommarive 14, I-38123 Trento (Italy); Mengucci, P.; Barucca, G. [Dipartimento di Fisica e Ingegneria dei Materiali e del Territorio, Università Politecnica delle Marche, I-60131 Ancona (Italy)

2013-12-15

Highlights: ► Highly oriented Pd-capped magnesium deuteride thin films. ► The MgD{sub 2} dissociation was studied at temperatures not exceeding 100 °C. ► The structure of the film samples was analyzed by XRD and TEM. ► The transformation is controlled by the re-growth velocity of the Mg layers. ► The transformation is thermally activated, activation energy value of 1.3 ± 0.1 eV. -- Abstract: Pd- capped nanocrystalline magnesium thin films having columnar structure were deposited on Si substrate by e-gun deposition and submitted to thermal annealing in D{sub 2} atmosphere to promote the metal to deuteride phase transformation. The kinetics of the reverse deuteride to metal transformation was studied by Thermal Desorption Spectroscopy (TDS) while the structure of the as deposited and transformed samples was analyzed by X-rays diffraction and Transmission Electron Microscopy (TEM). In Pd- capped MgD{sub 2} thin films the deuteride to metal transformation begins at the interface between un-reacted Mg and transformed MgD{sub 2} layers. The D{sub 2} desorption kinetics is controlled by MgD{sub 2}/Mg interface effects, specifically the re-growth velocity of the Mg layers. The Mg re-growth has thermally activated character and shows an activation energy value of 1.3 ± 0.1 eV.

Growth and magnetic structure of La0.67Sr0.33MnO3 films

International Nuclear Information System (INIS)

Brown, G.W.; Jia, Q.X.; Peterson, E.J.; Hristova, D.K.; Hundley, M.F.; Thompson, J.D.; Maggiore, C.J.; Tesmer, J.; Hawley, M.E.

1997-01-01

Growth of LaMnO 3 films that exhibit colossal magnetoresistance (CMR) has concentrated heavily on Ca doped materials. However, since the 33% Sr doped films are ferromagnetic at room temperature, they are ideal candidates for dual growth-magnetic structure studies using scanned probe techniques. In this study, interest was focused on the relations between growth/processing parameters, film morphology, and electronic/magnetic properties. In addition, films were grown on both LaAlO 3 (LAO) and SrTiO 3 (STO) to examine the results of stress induced by different substrate mismatches. La 0.67 Sr 0.33 MnO 3 (LSMO) was grown using pulsed laser deposition (PLD) at temperatures between 500 C and 800 C. The film microstructure, crystallinity, and magnetic and electrical properties were characterized by room temperature scanning tunneling microscopy (STM), atomic force microscopy (AFM), magnetic force microscopy (MFM), x-ray diffraction, and temperature dependent transport and magnetization measurements. The growth trends follow those previously reported for Ca doped films. Grains increase in size with increasing temperature and coalesce into extended layers after annealing. Although topographic contributions complicate interpretation of some MFM data, local magnetic structure observed here is generally associated with film defects

Controlling growth rate anisotropy for formation of continuous ZnO thin films from seeded substrates

International Nuclear Information System (INIS)

Zhang, R H; Slamovich, E B; Handwerker, C A

2013-01-01

Solution-processed zinc oxide (ZnO) thin films are promising candidates for low-temperature-processable active layers in transparent thin film electronics. In this study, control of growth rate anisotropy using ZnO nanoparticle seeds, capping ions, and pH adjustment leads to a low-temperature (90 ° C) hydrothermal process for transparent and high-density ZnO thin films. The common 1D ZnO nanorod array was grown into a 2D continuous polycrystalline film using a short-time pure solution method. Growth rate anisotropy of ZnO crystals and the film morphology were tuned by varying the chloride (Cl − ) ion concentration and the initial pH of solutions of zinc nitrate and hexamethylenetetramine (HMTA), and the competitive adsorption effects of Cl − ions and HMTA ligands on the anisotropic growth behavior of ZnO crystals were proposed. The lateral growth of nanorods constituting the film was promoted by lowering the solution pH to accelerate the hydrolysis of HMTA, thereby allowing the adsorption effects from Cl − to dominate. By optimizing the growth conditions, a dense ∼100 nm thickness film was fabricated in 15 min from a solution of [Cl − ]/[Zn 2+ ] = 1.5 and pH= 4.8 ± 0.1. This film shows >80% optical transmittance and a field-effect mobility of 2.730 cm 2 V −1 s −1 at zero back-gate bias. (paper)

Chemical structural analysis of diamondlike carbon films: I. Surface growth model

Science.gov (United States)

Takabayashi, Susumu; Ješko, Radek; Shinohara, Masanori; Hayashi, Hiroyuki; Sugimoto, Rintaro; Ogawa, Shuichi; Takakuwa, Yuji

2018-02-01

The surface growth mechanisms of diamondlike carbon (DLC) films has been clarified. DLC films were synthesized in atmospheres with a fixed methane-to-argon ratio at different temperatures up to 700 °C by the photoemission-assisted glow discharge of photoemission-assisted plasma-enhanced chemical vapor deposition. The electrical resistivity of the films decreased logarithmically as the synthesis temperature was increased. Conversely, the dielectric constant of the films increased and became divergent at high temperature. However, the very high electrical resistivity of the film synthesized at 150 °C was retained even after post-annealing treatments at temperatures up to 500 °C, and divergence of the dielectric constant was not observed. Such films exhibited excellent thermal stability and retained large amounts of hydrogen, even after post-annealing treatments. These results suggest that numerous hydrogen atoms were incorporated into the DLC films during synthesis at low temperatures. Hydrogen atoms terminate carbon dangling bonds in the films to restrict π-conjugated growth. During synthesis at high temperature, hydrogen was desorbed from the interior of the growing films and π-conjugated conductive films were formed. Moreover, hydrogen radicals were chemisorbed by carbon atoms at the growing DLC surface, leading to removal of carbon atoms from the surface as methane gas. The methane molecules decomposed into hydrocarbons and hydrogen radicals through the attack of electrons above the surface. Hydrogen radicals contributed to the etching reaction cycle of the film; the hydrocarbon radicals were polymerized by reacting with other radicals and the methane source. The polymer radicals remained above the film, preventing the supply of the methane source and disrupting the action of argon ions. At high temperatures, the resultant DLC films were rough and thin.

Growth and analysis of highly oriented (11n) BCSCO films for device research

Energy Technology Data Exchange (ETDEWEB)

Raina, K.K.; Pandey, R.K. [Texas A& M Univ., College Station, TX (United States)

1994-12-31

Films of BCSCO superconductor of the type Bi{sub 2}CaSr{sub 2}Cu{sub 2}O{sub x} have been grown by liquid phase epitaxy method (LPE), using a partially closed growth chamber. The films were grown on (001) and (110) NdGaO{sub 3} substrates by slow cooling process in an optimized temperature range below the peritectic melting point (880{degrees}C) of Bi{sub 2}CaSr{sub 2}Cu{sub 2}O{sub 8}. Optimization of parameters, such as seed rotation, soak of initial growth temperature and growth period results in the formation of 2122 phase BCSCO films. The films grown at rotation rates of less than 30 and more than 70 rpm are observed to be associated with the second phase of Sr-Ca-Cu-O system. Higher growth temperatures (>860{degrees}C) also encourage to the formation of this phase. XRD measurements show that the films grown on (110) NdGaO{sub 3} have a preferred (11n)-orientation. It is pertinent to mention here that in our earlier results published elsewhere we obtained c-axis oriented Bi{sub 2}CaSr{sub 2}Cu{sub 2}O{sub 8} phase films on (001) NdGaO{sub 3} substrate. Critical current density is found to be higher for the films grown on (110) than (001) NdGaO{sub 3} substrate orientation. The best values of zero resistance (T{sub co}) and critical current density obtained are 87 K and 10{sup 5} A/cm{sup 2}, respectively.

Big-data reflection high energy electron diffraction analysis for understanding epitaxial film growth processes.

Science.gov (United States)

Vasudevan, Rama K; Tselev, Alexander; Baddorf, Arthur P; Kalinin, Sergei V

2014-10-28

Reflection high energy electron diffraction (RHEED) has by now become a standard tool for in situ monitoring of film growth by pulsed laser deposition and molecular beam epitaxy. Yet despite the widespread adoption and wealth of information in RHEED images, most applications are limited to observing intensity oscillations of the specular spot, and much additional information on growth is discarded. With ease of data acquisition and increased computation speeds, statistical methods to rapidly mine the data set are now feasible. Here, we develop such an approach to the analysis of the fundamental growth processes through multivariate statistical analysis of a RHEED image sequence. This approach is illustrated for growth of La(x)Ca(1-x)MnO(3) films grown on etched (001) SrTiO(3) substrates, but is universal. The multivariate methods including principal component analysis and k-means clustering provide insight into the relevant behaviors, the timing and nature of a disordered to ordered growth change, and highlight statistically significant patterns. Fourier analysis yields the harmonic components of the signal and allows separation of the relevant components and baselines, isolating the asymmetric nature of the step density function and the transmission spots from the imperfect layer-by-layer (LBL) growth. These studies show the promise of big data approaches to obtaining more insight into film properties during and after epitaxial film growth. Furthermore, these studies open the pathway to use forward prediction methods to potentially allow significantly more control over growth process and hence final film quality.

Epitaxial thin film growth of LiH using a liquid-Li atomic template

Energy Technology Data Exchange (ETDEWEB)

Oguchi, Hiroyuki, E-mail: oguchi@nanosys.mech.tohoku.ac.jp [Department of Nanomechanics, Tohoku University, Sendai 980-8579 (Japan); Micro System Integration Center (muSIC), Tohoku University, Sendai 980-0845 (Japan); Ikeshoji, Tamio; Orimo, Shin-ichi [Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan); Advanced Institute for Materials Research (AIMR), Tohoku University, Sendai 980-8577 (Japan); Ohsawa, Takeo; Shiraki, Susumu; Hitosugi, Taro [Advanced Institute for Materials Research (AIMR), Tohoku University, Sendai 980-8577 (Japan); Kuwano, Hiroki [Department of Nanomechanics, Tohoku University, Sendai 980-8579 (Japan)

2014-11-24

We report on the synthesis of lithium hydride (LiH) epitaxial thin films through the hydrogenation of a Li melt, forming abrupt LiH/MgO interface. Experimental and first-principles molecular dynamics studies reveal a comprehensive microscopic picture of the crystallization processes, which sheds light on the fundamental atomistic growth processes that have remained unknown in the vapor-liquid-solid method. We found that the periodic structure that formed, because of the liquid-Li atoms at the film/MgO-substrate interface, serves as an atomic template for the epitaxial growth of LiH crystals. In contrast, films grown on the Al{sub 2}O{sub 3} substrates indicated polycrystalline films with a LiAlO{sub 2} secondary phase. These results and the proposed growth process provide insights into the preparation of other alkaline metal hydride thin films on oxides. Further, our investigations open the way to explore fundamental physics and chemistry of metal hydrides including possible phenomena that emerge at the heterointerfaces of metal hydrides.

Decoding Nucleation and Growth of Zeolitic Imidazolate Framework Thin Films with Atomic Force Microscopy and Vibrational Spectroscopy.

Science.gov (United States)

Öztürk, Zafer; Filez, Matthias; Weckhuysen, Bert M

2017-08-10

The synthesis of metal-organic framework (MOF) thin films has garnered significant attention during the past decade. By better understanding the parameters governing the nucleation and growth of such thin films, their properties can be rationally tuned, empowering their application as (reactive) membranes. Here, a combined AFM-vibrational spectroscopy research strategy is employed to detail the chemistries governing the nucleation and growth of zeolitic imidazolate framework (ZIF) thin films, in particular isostructural Co-ZIF-67 and Zn-ZIF-8. First, a single step direct synthesis approach is used to investigate the influence of different synthesis parameters -metal/linker ratio, temperature, and metal type- on the thin film nucleation and growth behaviour. While the metal/linker ratio has a pronounced effect on the thin film nucleation rate, the temperature mainly influences the growth kinetics of nuclei forming the thin film. In addition, the nucleation and growth of ZIF thin films is shown to be highly dependent on the electronegativity of the metal type. Thin-film thickness control can be achieved by using a multistep synthesis strategy, implying repetitive applications of single step deposition under identical synthesis conditions, for which a growth mechanism is proposed. This study provides insight into the influence of synthesis parameters on the ZIF thin film properties, using tools at hand to rationally tune MOF thin film properties. © 2017 The Authors. Published by Wiley-VCH Verlag GmbH & Co. KGaA.

Growth of vertically aligned ZnO nanorods using textured ZnO films

Directory of Open Access Journals (Sweden)

Meléndrez Manuel

2011-01-01

Full Text Available Abstract A hydrothermal method to grow vertical-aligned ZnO nanorod arrays on ZnO films obtained by atomic layer deposition (ALD is presented. The growth of ZnO nanorods is studied as function of the crystallographic orientation of the ZnO films deposited on silicon (100 substrates. Different thicknesses of ZnO films around 40 to 180 nm were obtained and characterized before carrying out the growth process by hydrothermal methods. A textured ZnO layer with preferential direction in the normal c-axes is formed on substrates by the decomposition of diethylzinc to provide nucleation sites for vertical nanorod growth. Crystallographic orientation of the ZnO nanorods and ZnO-ALD films was determined by X-ray diffraction analysis. Composition, morphologies, length, size, and diameter of the nanorods were studied using a scanning electron microscope and energy dispersed x-ray spectroscopy analyses. In this work, it is demonstrated that crystallinity of the ZnO-ALD films plays an important role in the vertical-aligned ZnO nanorod growth. The nanorod arrays synthesized in solution had a diameter, length, density, and orientation desirable for a potential application as photosensitive materials in the manufacture of semiconductor-polymer solar cells. PACS 61.46.Hk, Nanocrystals; 61.46.Km, Structure of nanowires and nanorods; 81.07.Gf, Nanowires; 81.15.Gh, Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.

Growth of Cu thin films by the successive ionic layer adsorption and reaction (SILAR) method

International Nuclear Information System (INIS)

Lindroos, S.; Ruuskanen, T.; Ritala, M.; Leskelae, M.

2004-01-01

Copper thin films were grown on reduced indium tin oxide, molybdenum and polymer substrates using successive ionic layer adsorption and reaction (SILAR) method. Copper films were grown sequentially in a controlled way using simple copper salt and basic solution of formaldehyde as precursors. The copper films were polycrystalline with no preferred orientation as characterised by X-ray diffraction. On all substrates, the growth was clearly island growth in the beginning but after the whole surface was covered, the growth was more homogeneous

Spatial control of cell attachment, proliferation, and differentiation using ion-beam induced thin films

International Nuclear Information System (INIS)

Tanaka, Toshiyuki; Suzuki, Yoshiaki

2014-01-01

Highlights: • Cellular films can be obtained ion-beam irradiation and cell culture. • Film shapes were controlled by patterned irradiation. • Cellular films were firmly attached each other. • Tubular constructions were fabricated by wide-patterned irradiation. • Nerve growth direction was controlled by varying the pattern widths. - Abstract: In this study, cellular films were fabricated by ion-beam irradiation into poly-L-lactic acid sheets and cell culture. The cellular film shapes can be controlled by pattern masks. We performed spatial cell patterning using three types of cells: fibroblasts, endothelial cells, and nerve-like cells. First, multi-layered cellular construct was fabricated by stacking fibroblast cellular films. When three cellular films were stacked and incubated, these films firmly attached to each other. Second, tubular constructs were fabricated by endothelial cell culture on linearly patterned surfaces with wide widths of 80, 120, 160, and 200 μm. The patterned cellular films were rounded into vessel-like structure. The diameters of the constructs depend upon the pattern widths. Finally, we controlled cell attachment and nerve growth of nerve-like cells by using linearly patterned surfaces with narrow widths of 10, 30, and 50 μm. Nerve growth direction was controlled by varying the pattern widths. In the case of 10 μm, the attached cells and nerve growth were straight on the patterned thin films. These cell patterning techniques are expected to have applications in tissue engineering, cell transplantation, and in vitro tissue modeling

Atomic Layer Control of Thin Film Growth Using Binary Reaction Sequence Chemistry

National Research Council Canada - National Science Library

George, Steven

1997-01-01

Our research is focusing on the atomic layer control of thin film growth. Our goal is to deposit films with precise control of thickness and conformality on both flat and high aspect ratio structures...

Stoichiometry-, phase- and orientation-controlled growth of polycrystalline pyrite (FeS 2) thin films by MOCVD

Science.gov (United States)

Höpfner, C.; Ellmer, K.; Ennaoui, A.; Pettenkofer, C.; Fiechter, S.; Tributsch, H.

1995-06-01

The growth process of polycrystalline pyrite thin films employing low pressure metalorganic chemical vapor deposition (LP-MOCVD) in a vertical cold wall reactor has been investigated. Iron pentacarbonyl (IPC) and t-butyldisulfide (TBDS) were utilized as precursors. Study of the growth rate as a function of temperature reveals a kinetically controlled growth process with an activation energy of 73 kJ / mol over the temperature range from 250 to 400°C. From 500 to 630°C, the growth rate is mainly mass transport limited. Decomposition of the films into pyrrhotite (Fe 1 - xS) occurs at higher growth temperatures. The {S}/{Fe} ratio in the films has been controlled from 1.23 up to 2.03 by changing the TBDS partial pressure. With increasing deposition temperature, the crystallites in the films show the tendency to grow [100]-oriented on amorphous substrates at a growth rate of 2.5 Å / s. The grains show a preferential orientation in the [111] direction upon lowering the growth rate down to 0.3 Å / s. Temperatures above 550°C are beneficial in enhancing the grain size in the columnar structured films up to 1.0 μm.

Crystallization of II-VI semiconductor compounds forming long microcrystalline linear assemblies

Directory of Open Access Journals (Sweden)

Marcelino Becerril

2013-04-01

Full Text Available In this work we report the formation of long microcrystalline linear self-assemblies observed during the thin film growth of several II-VI compounds. Polycrystalline CdTe, CdS, CdCO3, and nanocrystalline CdTe:Al thin films were prepared on glass substrates by different deposition techniques. In order to observe these crystalline formations in the polycrystalline materials, the thin film growth was suspended before the grains reached to form a continuous layer. The chains of semiconductor crystals were observed among many isolated and randomly distributed grains. Since CdTe, CdTe:Al, CdS and CdCO3 are not ferroelectric and/or ferromagnetic materials, the relevant problem would be to explain what is the mechanism through which the grains are held together to form linear chains. It is well known that some nanocrystalline materials form rods and wires by means of electrostatic forces. This occurs in polar semiconductors, where it is assumed that the attraction forces between surface polar faces of the small crystals are the responsible for the chains formation. Since there are not too many mechanisms responsible for the attraction we assume that a dipolar interaction is the force that originates the formation of chain-like grain clusters. The study of this property can be useful for the understanding of nucleation processes in the growth of semiconductor thin films.

Mechanism of formation and growth of sunflower-shaped imperfections in anodic oxide films on niobium

Energy Technology Data Exchange (ETDEWEB)

Nagahara, K. [Graduate School of Engineering, Hokkaido University, N13 W8 Kita-ku, Sapporo 060-8628 (Japan); Sakairi, M. [Graduate School of Engineering, Hokkaido University, N13 W8 Kita-ku, Sapporo 060-8628 (Japan); Takahashi, H. [Graduate School of Engineering, Hokkaido University, N13 W8 Kita-ku, Sapporo 060-8628 (Japan)]. E-mail: Takahasi@elechem1-mc.eng.hokudai.ac.jp; Matsumoto, K. [Cabot Supermetals K.K., Higashinagahara Works, 111 Nagayachi, Kawahigashi-machi, Kawanuma-gun, Fukushima-ken 969-3431 (Japan); Takayama, K. [Cabot Supermetals K.K., Higashinagahara Works, 111 Nagayachi, Kawahigashi-machi, Kawanuma-gun, Fukushima-ken 969-3431 (Japan); Oda, Y. [Cabot Supermetals K.K., Higashinagahara Works, 111 Nagayachi, Kawahigashi-machi, Kawanuma-gun, Fukushima-ken 969-3431 (Japan)

2007-01-01

Anodizing of niobium has been investigated to develop niobium solid electrolytic capacitors. Chemically polished niobium specimens were anodized in a diluted phosphoric acid solution, initially galvanostatically at i {sub a} = 4 A m{sup -2} up to E {sub a} = 100 V, and then potentiostatically at E {sub a} = 100 V for t {sub pa} = 43.2 ks. During the galvanostatic anodizing, the anode potential increased almost linearly with time, while, during potentiostatic anodizing, the anodic current decreased up to t {sub pa} = 3.6 ks, and then increased slowly before decreasing again after t {sub pa} = 30.0 ks. Images of FE-SEM and in situ AFM showed that nuclei of imperfections were formed at the ridge of cell structures before t {sub pa} = 3.6 ks. After formation, the imperfection nuclei grew, showing cracking and rolling-up of the anodic oxide film, and crystalline oxide was formed at the center of imperfections after t {sub pa} = 3.6 ks. The growth of imperfections caused increases in the anodic current between t {sub pa} = 3.6 and 30.0 ks. Long-term anodizing caused a coalescence of the imperfections, leading to decreases in the anodic current after t {sub pa} = 30.0 ks. As the imperfections grew, the dielectric dispersion of the anodic oxide films became serious, showing a bias voltage dependence of the parallel equivalent capacitance, C {sub p}, and a dielectric dissipation factor, tan {delta}. The mechanism of formation and growth of the imperfections, and the correlation between the structure and dielectric properties of anodic oxide films is discussed.

Anti-Oxidative and Antibacterial Self-Healing Edible Polyelectrolyte Multilayer Film in Fresh-Cut Fruits.

Science.gov (United States)

Liu, Xuefan; Han, Wei; Zhu, Yanxi; Xuan, Hongyun; Ren, Jiaoyu; Zhang, Jianhao; Ge, Liqin

2018-04-01

The consumption of fresh-cut fruits is limited because of the oxidation browning and pathogenic bacteria's growth on the fruit surface. Besides, crack of the fresh-keeping film may shorten the preservation time of fruit. In this work, polyelectrolyte multilayer (PEM) film was fabricated by layer-by-layer (LBL) electrostatic deposition method. The film was made by carboxy methylcellulose sodium (CMC) and chitosan (CS). The as-prepared PEM film had good anti-oxidative and antibacterial capability. It inhibited the growth of Gram-negative bacteria and the antibacterial rate was more than 95%. The stratified structure and linear increase of the absorbance in the film verified a linear increase of film thickness. The slight scratched film could self-heal rapidly after the stimulation of water whatever the layer number was. Moreover, the film could heal cracks whose width was far bigger than the thickness. The application of PEM film on fresh-cut apples showed that PEM film had good browning, weight loss and metabolic activity inhibition ability. These results showed that the PEM film is a good candidate as edible film in fresh-cut fruits applications.

Modeling of thin films growth processes in the early stage for atoms with covalent bonds

International Nuclear Information System (INIS)

Tupik, V A; Margolin, V I; Su, Chu Trong

2017-01-01

Computer simulation for obtaining thin film’s growth process at an early stage with the proposed model of atoms with isotropic and anisotropic interactions been considered. Carrying out the procedure for analyzing the problem on the basis of the program being implemented, computer simulation of thin film growth processes has been carried out on several examples. The results of computer simulation of the growth process of thin film on a given substrate and an aggregate in a vacuum condition are shown. Some characteristic distributions of the obtained structure have been carried out to evaluate the proposed adequate model and to reflect the high complexity of thin films growth process. (paper)

Substrate mediated growth of organic semiconducting thin films; Templateffekte bei der Strukturierung organischer Halbleiterfilme

Energy Technology Data Exchange (ETDEWEB)

Goetzen, Jan

2010-09-17

Since electronic properties of molecular materials are closely related to their structural order a precise control of the molecular packing and crystalline orientation of thin films is of vital interest for an optimization of organic electronic devices. Of particular interest in this respect is the initial stage of film formation which is largely governed by the interplay of intermolecular and molecule-substrate interactions. One approach to control the molecular film structure is based on substrate mediated growth. In this respect we have studied structural properties of thin films of pentacene, pentacene- 5,7,12,14-tetrone and perfluoro-pentacene which were grown onto various substrates including metals, metal oxides and graphite. On metal surfaces the molecules initially form a chemisorbed monolayer where molecules even can be uniformly aligned when using appropriate substrates with twofold symmetry. Further deposition, however, is accompanied by a pronounced dewetting and formation of disjoined islands which results from a large structural mismatch between the molecular arrangement in the monolayer and the crystalline phase. In some cases it is possible to orient such islands by utilizing step mediated nucleation and decoration of step bunches which allows the preparation of azimuthally well oriented elongated islands. On single crystalline oxides the growth parallels the situation found before for SiO{sub 2} where islands of upright oriented molecules are formed. The growth on graphite is somewhat particular since the lattice provides a natural template for acenes yielding epitaxially ordered monolayer films with planar adsorption geometry like in case of metals. Interestingly, however, no dewetting occurs upon further growth and instead rather smooth films are formed. The detailed analysis for the case of pentacene showed that the substrate-molecule interaction actually is weaker than the intermolecular interaction so that multilayer films can lift the

Controlling thin film structure for the dewetting of catalyst nanoparticle arrays for subsequent carbon nanofiber growth

International Nuclear Information System (INIS)

Randolph, S J; Fowlkes, J D; Melechko, A V; Klein, K L; III, H M Meyer; Simpson, M L; Rack, P D

2007-01-01

Vertically aligned carbon nanofiber (CNF) growth is a catalytic chemical vapor deposition process in which structure and functionality is controlled by the plasma conditions and the properties of the catalyst nanoparticles that template the fiber growth. We have found that the resultant catalyst nanoparticle network that forms by the dewetting of a continuous catalyst thin film is dependent on the initial properties of the thin film. Here we report the ability to tailor the crystallographic texture and composition of the nickel catalyst film and subsequently the nanoparticle template by varying the rf magnetron sputter deposition conditions. After sputtering the Ni catalyst thin films, the films are heated and exposed to an ammonia dc plasma, to chemically reduce the native oxide on the films and induce dewetting of the film to form nanoparticles. Subsequent nanoparticle treatment in an acetylene plasma at high substrate temperature results in CNF growth. Evidence is presented that the texture and composition of the nickel thin film has a significant impact on the structure and composition of the formed nanoparticle, as well as the resultant CNF morphology. Nickel films with a preferred (111) or (100) texture were produced and conditions favoring interfacial silicidation reactions were identified and investigated. Both compositional and structural analysis of the films and nanoparticles indicate that the properties of the as-deposited Ni catalyst film influences the subsequent nanoparticle formation and ultimately the catalytic growth of the carbon nanofibers

Features of film growth during plasma anodizing of Al 2024/SiC metal matrix composite

Energy Technology Data Exchange (ETDEWEB)

Xue Wenbin [Key Laboratory for Radiation Beam Technology and Materials Modification, Institute of Low Energy Nuclear Physics, Beijing Normal University, Beijing 100875 (China)]. E-mail: xuewb@bnu.edu.cn

2006-07-15

Plasma anodizing is a novel promising process to fabricate corrosion-resistant protective films on metal matrix composites. The corrosion-resistant films were prepared by plasma anodizing on SiC reinforced aluminum matrix composite. The morphology and microstructure of films were analyzed by scanning electron microscopy. Specifically, the morphology of residual SiC reinforcement particles in the film was observed. It is found that the most SiC reinforcement particles have been molten to become silicon oxide, but a few tiny SiC particles still remain in the film close to the composite/film interface. This interface is irregular due to the hindering effect of SiC particles on the film growth. Morphology and distribution of residual SiC particles in film provide direct evidence to identify the local melt occurs in the interior of plasma anodizing film even near the composite/film interface. A model of film growth by plasma anodizing on metal matrix composites was proposed.

Features of film growth during plasma anodizing of Al 2024/SiC metal matrix composite

International Nuclear Information System (INIS)

Xue Wenbin

2006-01-01

Plasma anodizing is a novel promising process to fabricate corrosion-resistant protective films on metal matrix composites. The corrosion-resistant films were prepared by plasma anodizing on SiC reinforced aluminum matrix composite. The morphology and microstructure of films were analyzed by scanning electron microscopy. Specifically, the morphology of residual SiC reinforcement particles in the film was observed. It is found that the most SiC reinforcement particles have been molten to become silicon oxide, but a few tiny SiC particles still remain in the film close to the composite/film interface. This interface is irregular due to the hindering effect of SiC particles on the film growth. Morphology and distribution of residual SiC particles in film provide direct evidence to identify the local melt occurs in the interior of plasma anodizing film even near the composite/film interface. A model of film growth by plasma anodizing on metal matrix composites was proposed

Growth of fine holes in polyethyleneterephthalate film irradiated by fission fragments

International Nuclear Information System (INIS)

Komaki, Y.; Tsujimura, S.

1975-01-01

Growth of fine holes by chemical etching in polyethyleneterephthalate films exposed to fission fragments were followed by measuring gas flow through films. The etching rate along tracks and the radial etching rate were determined at hole diameters of 100--3000 A and hole densities of 10 6 --10 8 /cm 2

Growth and morphology of aluminium contacts on P3HT films

Energy Technology Data Exchange (ETDEWEB)

Kaune, Gunar [TU Muenchen, Physik-Department, Lehrstuhl fuer Funktionelle Materialien, James-Franck-Strasse 1, 85747 Garching (Germany); Martin-Luther-Universitaet Halle-Wittenberg, Institut fuer Physik, Fachgruppe Photovoltaik, Von-Danckelmann-Platz 3, 06120 Halle (Germany); Meier, Robert; Metwalli, Ezzeldin; Koerstgens, Volker; Mueller-Buschbaum, Peter [TU Muenchen, Physik-Department, Lehrstuhl fuer Funktionelle Materialien, James-Franck-Strasse 1, 85747 Garching (Germany); Schlage, Kai; Couet, Sebastien; Roth, Stephan V. [HASYLAB, DESY, Notkestrasse 85, 22603 Hamburg (Germany)

2011-07-01

The characteristics of organic electronic devices are strongly influenced by the type and structure of the metal electrodes needed to inject or extract charge carriers. Therefore understanding of the metal growth process and its relation to the interactions at the metal-organic interface are necessary. We investigate the growth of an aluminium layer on the surface of a P3HT thin film by in-situ application of grazing incidence small-angle X-ray scattering (GISAXS). By subsequent modelling of the scattering data the structural parameters of the growing film are extracted and a growth process is found, which proceeds two-dimensional by stacking single atomic layers on top each other. This process results in a homogeneous film with a large contact area to the polymer and is explained by a strong chemical interaction between aluminium and P3HT, which suppresses clustering of the metal on the polymer surface. The diffusion of single aluminium atoms into the P3HT and the formation of an intermixing layer is revealed by X-ray reflectivity measurements.

Liquid phase epitaxial growth of heterostructured hierarchical MOF thin films

KAUST Repository

Chernikova, Valeriya

2017-05-10

Precise control of epitaxial growth of MOF-on-MOF thin films, for ordered hierarchical tbo-type structures is demonstrated. The heterostructured MOF thin film was fabricated by successful sequential deposition of layers from two different MOFs. The 2-periodic layers, edge-transitive 4,4-square lattices regarded as supermolecular building layers, were commendably cross-linked using a combination of inorganic/organic and organic pillars.

Liquid phase epitaxial growth of heterostructured hierarchical MOF thin films

KAUST Repository

Chernikova, Valeriya; Shekhah, Osama; Spanopoulos, Ioannis; Trikalitis, Pantelis N.; Eddaoudi, Mohamed

2017-01-01

Precise control of epitaxial growth of MOF-on-MOF thin films, for ordered hierarchical tbo-type structures is demonstrated. The heterostructured MOF thin film was fabricated by successful sequential deposition of layers from two different MOFs. The 2-periodic layers, edge-transitive 4,4-square lattices regarded as supermolecular building layers, were commendably cross-linked using a combination of inorganic/organic and organic pillars.

Growth of α-sexithiophene nanostructures on C60 thin film layers

DEFF Research Database (Denmark)

Radziwon, Michal Jędrzej; Madsen, Morten; Balzer, Frank

2014-01-01

Organic molecular beam grown -sexithiophene (-6T) forms nanostructured thin films on buckminsterfullerene (C60) thin film layers. At substrate temperatures of 300K during growth a rough continuous film is observed, which develop to larger elongated islands and dendritic- as well as needle like ...... fluorescence polarimetry measurements the in-plane orientation of the crystalline sites within the needle like structures is determined. The polarimetry investigations strongly indicate that the needle like structures consist of lying molecules....

Linear growth of children on a ketogenic diet: does the protein-to-energy ratio matter?

Science.gov (United States)

Nation, Judy; Humphrey, Maureen; MacKay, Mark; Boneh, Avihu

2014-11-01

Ketogenic diet is a structured effective treatment for children with intractable epilepsy. Several reports have indicated poor linear growth in children on the diet but the mechanism of poor growth has not been elucidated. We aimed to explore whether the protein to energy ratio plays a role in linear growth of children on ketogenic diet. Data regarding growth and nutrition were, retrospectively, collected from the clinical histories of 35 children who were treated with ketogenic diet for at least 6 months between 2002 and 2010. Patients were stratified into groups according to periods of satisfactory or poor linear growth. Poor linear growth was associated with protein or caloric intake of <80% recommended daily intake, and with a protein-to-energy ratio consistently ≤1.4 g protein/100 kcal even when protein and caloric intakes were adequate. We recommend a protein-to-energy ratio of 1.5 g protein/100 kcal be prescribed to prevent growth retardation. © The Author(s) 2013.

Magnetic and structural properties of Co2FeAl thin films grown on Si substrate

International Nuclear Information System (INIS)

Belmeguenai, Mohamed; Tuzcuoglu, Hanife; Gabor, Mihai; Petrisor, Traian; Tiusan, Coriolan; Berling, Dominique; Zighem, Fatih; Mourad Chérif, Salim

2015-01-01

The correlation between magnetic and structural properties of Co 2 FeAl (CFA) thin films of different thicknesses (10 nmgrowth of the films. The deduced lattice parameter increases with the film thickness. Moreover, pole figures showed no in-plane preferential growth orientation. The magneto-optical Kerr effect hysteresis loops showed the presence of a weak in-plane uniaxial anisotropy with a random easy axis direction. The coercive field, measured with the applied field along the easy axis direction, and the uniaxial anisotropy field increase linearly with the inverse of the CFA thickness. The microstrip line ferromagnetic resonance measurements for in-plane and perpendicular applied magnetic fields revealed that the effective magnetization and the uniaxial in-plane anisotropy field follow a linear variation versus the inverse CFA thickness. This allows deriving a perpendicular surface anisotropy coefficient of −1.86 erg/cm 2 . - Highlights: • Various Co 2 FeAl thin films were grown on a Si(001) substrates and annealed at 600 °C. • The thickness dependence of magnetic and structural properties has been studied. • X-ray measurements revealed an (011) out-of-plane textured growth of the films. • The easy axis coercive field varies linearly with the inverse CFA thickness. • The effective magnetization increases linearly with the inverse film thickness

Growth and Etch Rate Study of Low Temperature Anodic Silicon Dioxide Thin Films

Directory of Open Access Journals (Sweden)

Akarapu Ashok

2014-01-01

Full Text Available Silicon dioxide (SiO2 thin films are most commonly used insulating films in the fabrication of silicon-based integrated circuits (ICs and microelectromechanical systems (MEMS. Several techniques with different processing environments have been investigated to deposit silicon dioxide films at temperatures down to room temperature. Anodic oxidation of silicon is one of the low temperature processes to grow oxide films even below room temperature. In the present work, uniform silicon dioxide thin films are grown at room temperature by using anodic oxidation technique. Oxide films are synthesized in potentiostatic and potentiodynamic regimes at large applied voltages in order to investigate the effect of voltage, mechanical stirring of electrolyte, current density and the water percentage on growth rate, and the different properties of as-grown oxide films. Ellipsometry, FTIR, and SEM are employed to investigate various properties of the oxide films. A 5.25 Å/V growth rate is achieved in potentiostatic mode. In the case of potentiodynamic mode, 160 nm thickness is attained at 300 V. The oxide films developed in both modes are slightly silicon rich, uniform, and less porous. The present study is intended to inspect various properties which are considered for applications in MEMS and Microelectronics.

MOCVD Growth and Characterization of n-type Zinc Oxide Thin Films

Science.gov (United States)

Ben-Yaacov, Tammy

In the past decade, there has been widespread effort in the development of zinc oxide as a II-V1 semiconductor material. ZnO has potential advantages in optoelectronip device applications due to its unique electrical and optical properties. What stands out among these properties is its wide direct bandgap of 3.37 eV and its high electrical conductivity and transparency in the visible and near-UV regions of the spectrum. ZnO can be grown heteroepitaxially on GaN under near lattice-matched conditions and homoepitaxially as well, as high-quality bulk ZnO substrates are commercially available. This dissertation focuses on the development of the growth of high-quality, single crystal n-type ZnO films, control of n-type conductivity, as well as its application as a transparent contact material in GaN-based devices. The first part of this dissertation is an extensive heteroepitaxial and homoepitaxial growth study presenting the properties of ZnO(0001) layers grown on GaN(0001) templates and ZnO(0001) substrates. We show that deposition on GaN requires a two-step growth technique involving the growth of a low temperature nucleation layer before growing a high temperature epitaxial layer in order to obtain smooth ZnO films with excellent crystal quality and step-flow surface morphology. We obtained homoepitaxial ZnO(0001) films of structural quality and surface morphology that is comparable to the as-received substrates, and showed that a high growth temperature (≥1000°C) is needed in order to achieve step-flow growth mode. We performed n-type doping experiments, and established the conditions for which Indium effectively controls the n-type conductivity of ZnO films grown on GaN(0001) templates. A peak carrier concentration of 3.22x 10 19cm-3 and minimum sheet resistance of 97 O/square was achieved, while simultaneously maintaining good morphology and crystal quality. Finally, we present In-doped ZnO films implemented as p-contacts for GaN-based solar cells and LEDs

Core-Shell Double Gyroid Structure Formed by Linear ABC Terpolymer Thin Films.

Science.gov (United States)

Antoine, Ségolène; Aissou, Karim; Mumtaz, Muhammad; Telitel, Siham; Pécastaings, Gilles; Wirotius, Anne-Laure; Brochon, Cyril; Cloutet, Eric; Fleury, Guillaume; Hadziioannou, Georges

2018-05-01

The synthesis and self-assembly in thin-film configuration of linear ABC triblock terpolymer chains consisting of polystyrene (PS), poly(2-vinylpyridine) (P2VP), and polyisoprene (PI) are described. For that purpose, a hydroxyl-terminated PS-b-P2VP (45 kg mol -1 ) building block and a carboxyl-terminated PI (9 kg mol -1 ) are first separately prepared by anionic polymerization, and then are coupled via a Steglich esterification reaction. This quantitative and metal-free catalyst synthesis route reveals to be very interesting since functionalization and purification steps are straightforward, and well-defined terpolymers are produced. A solvent vapor annealing (SVA) process is used to promote the self-assembly of frustrated PS-b-P2VP-b-PI chains into a thin-film core-shell double gyroid (Q 230 , space group: Ia3¯d) structure. As terraces are formed within PS-b-P2VP-b-PI thin films during the SVA process under a CHCl 3 vapor, different plane orientations of the Q 230 structure ((211), (110), (111), and (100)) are observed at the polymer-air interface depending on the film thickness. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Stoichiometry-, phase- and orientation-controlled growth of polycrystalline pyrite (FeS{sub 2}) thin films by MOCVD

Energy Technology Data Exchange (ETDEWEB)

Hoepfner, C.; Ellmer, K.; Ennaoui, A.; Pettenkofer, C.; Fiechter, S.; Tributsch, H. [Hahn-Meitner-Institut Berlin, Abteilung Solare Energetik, Berlin (Germany)

1995-06-01

The growth process of polycrystalline pyrite thin films employing low pressure metalorganic chemical vapor deposition (LP-MOCVD) in a vertical cold wall reactor has been investigated. Iron pentacarbonyl (IPC) and t-butyldisulfide (TBDS) were utilized as precursors. Study of the growth rate as a function of temperature reveals a kinetically controlled growth process with an activation energy of 73 kJ/mol over the temperature range from 250 to 400C. From 500 to 630C, the growth rate is mainly mass transport limited. Decomposition of the films into pyrrhotite (Fe{sub 1-x}S) occurs at higher growth temperatures. The S/Fe ratio in the films has been controlled from 1.23 up to 2.03 by changing the TBDS partial pressure. With increasing deposition temperature, the crystallites in the films show the tendency to grow [100]-oriented on amorphous substrates at a growth rate of 2.5 A/s. The grains show a preferential orientation in the [111] direction upon lowering the growth rate down to 0.3 A/s. Temperatures above 550C are beneficial in enhancing the grain size in the columnar structured films up to 1.0 {mu}m

Growth and magnetic properties dependence of the Co–Cu/Cu films electrodeposited under high magnetic fields

Energy Technology Data Exchange (ETDEWEB)

Franczak, Agnieszka, E-mail: agnieszka.franczak@mtm.kuleuven.be [Laboratoire d’Ingénierie et Sciences des Matériaux (LISM EA 4695), Université de Reims Champagne-Ardenne, UFR Sciences et Naturelles, Bat. 6, Moulin de la Housse, BP 1039, 51687 Reims Cedex 2 (France); Department of Materials Science (MTM), KU Leuven, Kasteelpark Arenberg 44, 3001 Haverlee (Leuven) (Belgium); Levesque, Alexandra [Laboratoire d’Ingénierie et Sciences des Matériaux (LISM EA 4695), Université de Reims Champagne-Ardenne, UFR Sciences et Naturelles, Bat. 6, Moulin de la Housse, BP 1039, 51687 Reims Cedex 2 (France); Zabinski, Piotr [Laboratory of Physical Chemistry and Electrochemistry, Faculty of Non-Ferrous Metals, AGH University of Science and Technology, al. A. Mickiewicza 30, 30059 Krakow (Poland); Li, Donggang [Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, 314 Box, 110004 Shenyang (China); Czapkiewicz, Maciej [Department of Electronics, AGH University of Science and Technology, al. A. Mickiewicza 30, 30059 Krakow (Poland); Kowalik, Remigiusz [Laboratory of Physical Chemistry and Electrochemistry, Faculty of Non-Ferrous Metals, AGH University of Science and Technology, al. A. Mickiewicza 30, 30059 Krakow (Poland); Bohr, Frédéric [Laboratoire d’Ingénierie et Sciences des Matériaux (LISM EA 4695), Université de Reims Champagne-Ardenne, UFR Sciences et Naturelles, Bat. 6, Moulin de la Housse, BP 1039, 51687 Reims Cedex 2 (France); and others

2015-07-15

The present work is focused on the investigations of magnetic properties dependence on microstructure of Co–Cu/Cu films electrodeposited under superimposed high magnetic field. The experimental results indicate a strong effect of an external magnetic field on the morphology of deposited films, more precisely on the Co:Cu ratio that determines the film growth. It is shown that the Co–Cu/Cu films electrodeposited without superimposed magnetic field consisted of two clearly visible features: compact film with incorporated granular particles. Under a superimposed external high magnetic field the privilege growth of the particles was induced. As a consequence, development of the well-defined branched structure of Co–Cu/Cu film was observed. In contrary, the phase compositional investigations do not reveal any changes in the phase formation during electrodeposition under magnetic field conditions. Thus, it is assumed that a strong growth of Co–Cu/Cu films in (111) direction under magnetic or non-magnetic electrodeposition conditions is related with the growth of Cu (111) plane and embedded into it some of the Co fcc atoms of same (111) orientation, as well as the Co hcp atoms that grows in the (002) direction. This non-equilibrium growth of Co–Cu/Cu films under magnetic deposition conditions affects strongly the magnetic properties of deposited films, revealing that films obtained under magnetic fields higher than 3 T were no more magnetic materials. - Highlights: • Co–Cu/Cu electrodeposits were obtained at elevated temperature under HMFs. • The effects of HMFs on microstructure and magnetic properties were investigated. • Interesting morphological changes due to HMFs has been observed. • Changes in Co:Cu ratio due to HMFs modified the magnetic properties of deposits.

Growth and magnetic properties dependence of the Co–Cu/Cu films electrodeposited under high magnetic fields

International Nuclear Information System (INIS)

Franczak, Agnieszka; Levesque, Alexandra; Zabinski, Piotr; Li, Donggang; Czapkiewicz, Maciej; Kowalik, Remigiusz; Bohr, Frédéric

2015-01-01

The present work is focused on the investigations of magnetic properties dependence on microstructure of Co–Cu/Cu films electrodeposited under superimposed high magnetic field. The experimental results indicate a strong effect of an external magnetic field on the morphology of deposited films, more precisely on the Co:Cu ratio that determines the film growth. It is shown that the Co–Cu/Cu films electrodeposited without superimposed magnetic field consisted of two clearly visible features: compact film with incorporated granular particles. Under a superimposed external high magnetic field the privilege growth of the particles was induced. As a consequence, development of the well-defined branched structure of Co–Cu/Cu film was observed. In contrary, the phase compositional investigations do not reveal any changes in the phase formation during electrodeposition under magnetic field conditions. Thus, it is assumed that a strong growth of Co–Cu/Cu films in (111) direction under magnetic or non-magnetic electrodeposition conditions is related with the growth of Cu (111) plane and embedded into it some of the Co fcc atoms of same (111) orientation, as well as the Co hcp atoms that grows in the (002) direction. This non-equilibrium growth of Co–Cu/Cu films under magnetic deposition conditions affects strongly the magnetic properties of deposited films, revealing that films obtained under magnetic fields higher than 3 T were no more magnetic materials. - Highlights: • Co–Cu/Cu electrodeposits were obtained at elevated temperature under HMFs. • The effects of HMFs on microstructure and magnetic properties were investigated. • Interesting morphological changes due to HMFs has been observed. • Changes in Co:Cu ratio due to HMFs modified the magnetic properties of deposits

Multi-Directional Growth of Aligned Carbon Nanotubes Over Catalyst Film Prepared by Atomic Layer Deposition

Directory of Open Access Journals (Sweden)

Zhou Kai

2010-01-01

Full Text Available Abstract The structure of vertically aligned carbon nanotubes (CNTs severely depends on the properties of pre-prepared catalyst films. Aiming for the preparation of precisely controlled catalyst film, atomic layer deposition (ALD was employed to deposit uniform Fe2O3 film for the growth of CNT arrays on planar substrate surfaces as well as the curved ones. Iron acetylacetonate and ozone were introduced into the reactor alternately as precursors to realize the formation of catalyst films. By varying the deposition cycles, uniform and smooth Fe2O3 catalyst films with different thicknesses were obtained on Si/SiO2 substrate, which supported the growth of highly oriented few-walled CNT arrays. Utilizing the advantage of ALD process in coating non-planar surfaces, uniform catalyst films can also be successfully deposited onto quartz fibers. Aligned few-walled CNTs can be grafted on the quartz fibers, and they self-organized into a leaf-shaped structure due to the curved surface morphology. The growth of aligned CNTs on non-planar surfaces holds promise in constructing hierarchical CNT architectures in future.

Single crystalline metal films as substrates for graphene growth

Energy Technology Data Exchange (ETDEWEB)

Zeller, Patrick; Henss, Ann-Kathrin; Wintterlin, Joost [Department Chemie, Ludwig-Maximilians-Universitaet Muenchen (Germany); Weinl, Michael; Schreck, Matthias [Institut fuer Physik, Universitaet Augsburg (Germany); Speck, Florian; Ostler, Markus [Lehrstuhl fuer Technische Physik, Universitaet Erlangen-Nuernberg, Erlangen (Germany); Institut fuer Physik, Technische Universitaet Chemnitz (Germany); Seyller, Thomas [Institut fuer Physik, Technische Universitaet Chemnitz (Germany)

2017-11-15

Single crystalline metal films deposited on YSZ-buffered Si(111) wafers were investigated with respect to their suitability as substrates for epitaxial graphene. Graphene was grown by CVD of ethylene on Ru(0001), Ir(111), and Ni(111) films in UHV. For analysis a variety of surface science methods were used. By an initial annealing step the surface quality of the films was strongly improved. The temperature treatments of the metal films caused a pattern of slip lines, formed by thermal stress in the films, which, however, did not affect the graphene quality and even prevented wrinkle formation. Graphene was successfully grown on all three types of metal films in a quality comparable to graphene grown on bulk single crystals of the same metals. In the case of the Ni(111) films the originally obtained domain structure of rotational graphene phases could be transformed into a single domain by annealing. This healing process is based on the control of the equilibrium between graphene and dissolved carbon in the film. For the system graphene/Ni(111) the metal, after graphene growth, could be removed from underneath the epitaxial graphene layer by a pure gas phase reaction, using the reaction of CO with Ni to give gaseous Ni(CO){sub 4}. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

A stochastic model of solid state thin film deposition: Application to chalcopyrite growth

Directory of Open Access Journals (Sweden)

Robert J. Lovelett

2016-04-01

Full Text Available Developing high fidelity quantitative models of solid state reaction systems can be challenging, especially in deposition systems where, in addition to the multiple competing processes occurring simultaneously, the solid interacts with its atmosphere. In this work, we develop a model for the growth of a thin solid film where species from the atmosphere adsorb, diffuse, and react with the film. The model is mesoscale and describes an entire film with thickness on the order of microns. Because it is stochastic, the model allows us to examine inhomogeneities and agglomerations that would be impossible to characterize with deterministic methods. We demonstrate the modeling approach with the example of chalcopyrite Cu(InGa(SeS2 thin film growth via precursor reaction, which is a common industrial method for fabricating thin film photovoltaic modules. The model is used to understand how and why through-film variation in the composition of Cu(InGa(SeS2 thin films arises and persists. We believe that the model will be valuable as an effective quantitative description of many other materials systems used in semiconductors, energy storage, and other fast-growing industries.

Tailoring the nanoscale morphology of HKUST-1 thin films via codeposition and seeded growth.

Science.gov (United States)

Brower, Landon J; Gentry, Lauren K; Napier, Amanda L; Anderson, Mary E

2017-01-01

Integration of surface-anchored metal-organic frameworks (surMOFs) within hierarchical architectures is necessary for potential sensing, electronic, optical, or separation applications. It is important to understand the fundamentals of film formation for these surMOFs in order to develop strategies for their incorporation with nanoscale control over lateral and vertical dimensions. This research identified processing parameters to control the film morphology for surMOFs of HKUST-1 fabricated by codeposition and seeded deposition. Time and temperature were investigated to observe film formation, to control film thickness, and to tune morphology. Film thickness was investigated by ellipsometry, while film structure and film roughness were characterized by atomic force microscopy. Films formed via codeposition resulted in nanocrystallites anchored to the gold substrate. A dynamic process at the interface was observed with a low density of large particulates (above 100 nm) initially forming on the substrate; and over time these particulates were slowly replaced by the prevalence of smaller crystallites (ca. 10 nm) covering the substrate at a high density. Elevated temperature was found to expedite the growth process to obtain the full range of surface morphologies with reasonable processing times. Seed crystals formed by the codeposition method were stable and nucleated growth throughout a subsequent layer-by-layer deposition process. These seed crystals templated the final film structure and tailor the features in lateral and vertical directions. Using codeposition and seeded growth, different surface morphologies with controllable nanoscale dimensions can be designed and fabricated for integration of MOF systems directly into device architectures and sensor platforms.

Tailoring the nanoscale morphology of HKUST-1 thin films via codeposition and seeded growth

Directory of Open Access Journals (Sweden)

Landon J. Brower

2017-11-01

Full Text Available Integration of surface-anchored metal-organic frameworks (surMOFs within hierarchical architectures is necessary for potential sensing, electronic, optical, or separation applications. It is important to understand the fundamentals of film formation for these surMOFs in order to develop strategies for their incorporation with nanoscale control over lateral and vertical dimensions. This research identified processing parameters to control the film morphology for surMOFs of HKUST-1 fabricated by codeposition and seeded deposition. Time and temperature were investigated to observe film formation, to control film thickness, and to tune morphology. Film thickness was investigated by ellipsometry, while film structure and film roughness were characterized by atomic force microscopy. Films formed via codeposition resulted in nanocrystallites anchored to the gold substrate. A dynamic process at the interface was observed with a low density of large particulates (above 100 nm initially forming on the substrate; and over time these particulates were slowly replaced by the prevalence of smaller crystallites (ca. 10 nm covering the substrate at a high density. Elevated temperature was found to expedite the growth process to obtain the full range of surface morphologies with reasonable processing times. Seed crystals formed by the codeposition method were stable and nucleated growth throughout a subsequent layer-by-layer deposition process. These seed crystals templated the final film structure and tailor the features in lateral and vertical directions. Using codeposition and seeded growth, different surface morphologies with controllable nanoscale dimensions can be designed and fabricated for integration of MOF systems directly into device architectures and sensor platforms.

Linear Stability of Binary Alloy Solidification for Unsteady Growth Rates

Science.gov (United States)

Mazuruk, K.; Volz, M. P.

2010-01-01

An extension of the Mullins and Sekerka (MS) linear stability analysis to the unsteady growth rate case is considered for dilute binary alloys. In particular, the stability of the planar interface during the initial solidification transient is studied in detail numerically. The rapid solidification case, when the system is traversing through the unstable region defined by the MS criterion, has also been treated. It has been observed that the onset of instability is quite accurately defined by the "quasi-stationary MS criterion", when the growth rate and other process parameters are taken as constants at a particular time of the growth process. A singular behavior of the governing equations for the perturbed quantities at the constitutional supercooling demarcation line has been observed. However, when the solidification process, during its transient, crosses this demarcation line, a planar interface is stable according to the linear analysis performed.

Effect of Nano-Ni Catalyst on the Growth and Characterization of Diamond Films by HFCVD

Directory of Open Access Journals (Sweden)

Chien-Chung Teng

2010-01-01

Full Text Available Four different catalysts, nanodiamond seed, nano-Ni, diamond powder, and mixture of nano-Ni/diamond powder, were used to activate Si wafers for diamond film growth by hot-filament CVD (HFCVD. Diamond crystals were shown to grow directly on both large diamond powder and small nanodiamond seed, but a better crystallinity of diamond film was observed on the ultrasonicated nanodiamond seeded Si substrate. On the other hand, nano-Ni nanocatalysts seem to promote the formation of amorphous carbon but suppress transpolyacetylene (t-PA phases at the initial growth of diamond films. The subsequent nucleation and growth of diamond crystals on the amorphous carbon layer leads to generation of the spherical diamond particles and clusters prior to coalescence into continuous diamond films based on the CH3 addition mechanism as characterized by XRD, Raman, ATR/FT-IR, XPS, TEM, SEM, and AFM techniques. Moreover, a 36% reduction in surface roughness of diamond film assisted by nano-Ni catalyst is quite significant.

Domain growth of carbon nanotubes assisted by dewetting of thin catalyst precursor films

Energy Technology Data Exchange (ETDEWEB)

Srivastava, Alok Kumar [Defence Materials and Stores R and D Establishment (DRDO), GT Road, Kanpur 208013 (India); Department of Chemical Engineering, Indian Institute of Technology, Kanpur 208016 (India); Sachan, Priyanka; Samanta, Chandan [Department of Chemical Engineering, Indian Institute of Technology, Kanpur 208016 (India); Mukhopadhyay, Kingsuk [Defence Materials and Stores R and D Establishment (DRDO), GT Road, Kanpur 208013 (India); Sharma, Ashutosh, E-mail: ashutos@iitk.ac.in [Department of Chemical Engineering, Indian Institute of Technology, Kanpur 208016 (India)

2014-01-01

We explore self-organized dewetting of ultrathin films of a novel metal complex as a one step surface patterning method to create nanoislands of iron, using which spatially separated carbon nanostructures were synthesized. Dewetting of ultrathin metal complex films was induced by two different methods: liquid solvent exposure and thermal annealing to engender surface patterning. For thermal dewetting, thin films of the iron oleate complex were dewetted at high temperature. In the case of liquid solvent assisted dewetting, the metal complex, mixed with a sacrificial polymer (polystyrene) was spin coated as thin films (<40 nm) and then dewetted under an optimal solution mixture consisting of methyl ethyl ketone, acetone and water. The carrier polymer was then selectively removed to produce the iron metal islands. These metal islands were used for selective growth of discrete patches of multiwall CNTs and CNFs by a chemical vapor deposition (CVD) process. Solvent induced dewetting showed clear advantages over thermal dewetting owing to reduced size of catalyst domains formed by dewetting, an improved control over CNT growth as well as in its ability to immobilize the seed particles. The generic solution mediated dewetting and pattern generation in thin films of various catalytic precursors can thus be a powerful method for selective domain growth of a variety of functional nanomaterials.

On Associative Conformal Algebras of Linear Growth

OpenAIRE

Retakh, Alexander

2000-01-01

Lie conformal algebras appear in the theory of vertex algebras. Their relation is similar to that of Lie algebras and their universal enveloping algebras. Associative conformal algebras play a role in conformal representation theory. We introduce the notions of conformal identity and unital associative conformal algebras and classify finitely generated simple unital associative conformal algebras of linear growth. These are precisely the complete algebras of conformal endomorphisms of finite ...

Intermediate surface structure between step bunching and step flow in SrRuO3 thin film growth

Science.gov (United States)

Bertino, Giulia; Gura, Anna; Dawber, Matthew

We performed a systematic study of SrRuO3 thin films grown on TiO2 terminated SrTiO3 substrates using off-axis magnetron sputtering. We investigated the step bunching formation and the evolution of the SRO film morphology by varying the step size of the substrate, the growth temperature and the film thickness. The thin films were characterized using Atomic Force Microscopy and X-Ray Diffraction. We identified single and multiple step bunching and step flow growth regimes as a function of the growth parameters. Also, we clearly observe a stronger influence of the step size of the substrate on the evolution of the SRO film surface with respect to the other growth parameters. Remarkably, we observe the formation of a smooth, regular and uniform ``fish skin'' structure at the transition between one regime and another. We believe that the fish skin structure results from the merging of 2D flat islands predicted by previous models. The direct observation of this transition structure allows us to better understand how and when step bunching develops in the growth of SrRuO3 thin films.

Direct and Maternal Additive Effects on Rabbit Growth and Linear ...

African Journals Online (AJOL)

Growth and linear body measurements of rabbits which consisted of 17 ew Zealand White (ZW), 19 Chinchilla (CH), 29 ZW x CH and 33 CH x ZW kittens were compared. The aim of the experiment was to evaluate the crossbreeding effects (i.e direct and maternal additive effect) for growth (individual body weight, IBW) and ...

Magnetic and structural properties of Co{sub 2}FeAl thin films grown on Si substrate

Energy Technology Data Exchange (ETDEWEB)

Belmeguenai, Mohamed, E-mail: belmeguenai.mohamed@univ-paris13.fr [LSPM (CNRS-UPR 3407) 99 Avenue Jean-Baptiste Clément Université Paris 13, 93430 Villetaneuse (France); Tuzcuoglu, Hanife [LSPM (CNRS-UPR 3407) 99 Avenue Jean-Baptiste Clément Université Paris 13, 93430 Villetaneuse (France); Gabor, Mihai; Petrisor, Traian [Center for Superconductivity, Spintronics and Surface Science, Technical University of Cluj-Napoca, Street Memorandumului No. 28, RO-400114 Cluj-Napoca (Romania); Tiusan, Coriolan [Center for Superconductivity, Spintronics and Surface Science, Technical University of Cluj-Napoca, Street Memorandumului No. 28, RO-400114 Cluj-Napoca (Romania); Institut Jean Lamour, CNRS, Université de Nancy, BP 70239, F-54506 Vandoeuvre (France); Berling, Dominique [IS2M (CNRS-LRC 7228), 15 rue Jean Starcky, Université de Haute-Alsace, BP 2488, 68057 Mulhouse-Cedex (France); Zighem, Fatih; Mourad Chérif, Salim [LSPM (CNRS-UPR 3407) 99 Avenue Jean-Baptiste Clément Université Paris 13, 93430 Villetaneuse (France)

2015-01-01

The correlation between magnetic and structural properties of Co{sub 2}FeAl (CFA) thin films of different thicknesses (10 nmgrowth of the films. The deduced lattice parameter increases with the film thickness. Moreover, pole figures showed no in-plane preferential growth orientation. The magneto-optical Kerr effect hysteresis loops showed the presence of a weak in-plane uniaxial anisotropy with a random easy axis direction. The coercive field, measured with the applied field along the easy axis direction, and the uniaxial anisotropy field increase linearly with the inverse of the CFA thickness. The microstrip line ferromagnetic resonance measurements for in-plane and perpendicular applied magnetic fields revealed that the effective magnetization and the uniaxial in-plane anisotropy field follow a linear variation versus the inverse CFA thickness. This allows deriving a perpendicular surface anisotropy coefficient of −1.86 erg/cm{sup 2}. - Highlights: • Various Co{sub 2}FeAl thin films were grown on a Si(001) substrates and annealed at 600 °C. • The thickness dependence of magnetic and structural properties has been studied. • X-ray measurements revealed an (011) out-of-plane textured growth of the films. • The easy axis coercive field varies linearly with the inverse CFA thickness. • The effective magnetization increases linearly with the inverse film thickness.

Nanowire growth from the viewpoint of the thin film polylayer growth theory

Science.gov (United States)

Kashchiev, Dimo

2018-03-01

The theory of polylayer growth of thin solid films is employed for description of the growth kinetics of single-crystal nanowires. Expressions are derived for the dependences of the height h and radius r of a given nanowire on time t, as well as for the h(r) dependence. These dependences are applicable immediately after the nanowire nucleation on the substrate and thus include the period during which the nucleated nanowire changes its shape from that of cap to that of column. The analysis shows that the nanowire cap-to-column shape transition is continuous and makes it possible to kinetically define the nanowire shape-transition radius by means of the nanowire radial and axial growth rates. The obtained h(t), r(t) and h(r) dependences are found to provide a good description of available experimental data for growth of self-nucleated GaN nanowires by the vapor-solid mechanism.

TiN films by Atomic Layer Deposition: Growth and electrical characterization down to sub-nm thickness

NARCIS (Netherlands)

Van Hao, B.; Wolters, Robertus A.M.; Kovalgin, Alexeij Y.

2012-01-01

This study reports on the growth and characterization of TiN thib films obtained by atomic layer deposition at 350-425 ◦C. We observe a growth of the continuous layers from the very beginning of the process, i.e. for a thickness of 0.65 nm, which is equivalent to 3 monolayers of TiN. The film growth

Wavelength dependence of the linear growth rate of the Es layer instability

Directory of Open Access Journals (Sweden)

R. B. Cosgrove

2007-06-01

Full Text Available It has recently been shown, by computation of the linear growth rate, that midlatitude sporadic-E (Es layers are subject to a large scale electrodynamic instability. This instability is a logical candidate to explain certain frontal structuring events, and polarization electric fields, which have been observed in Es layers by ionosondes, by coherent scatter radars, and by rockets. However, the original growth rate derivation assumed an infinitely thin Es layer, and therefore did not address the short wavelength cutoff. Also, the same derivation ignored the effects of F region loading, which is a significant wavelength dependent effect. Herein is given a generalized derivation that remedies both these short comings, and thereby allows a computation of the wavelength dependence of the linear growth rate, as well as computations of various threshold conditions. The wavelength dependence of the linear growth rate is compared with observed periodicities, and the role of the zeroth order meridional wind is explored. A three-dimensional paper model is used to explain the instability geometry, which has been defined formally in previous works.

Photoinduced non-linear optical effects in the ZnS-Al, In-Sn doped film-glass nanometer-sized interfaces

International Nuclear Information System (INIS)

Kityk, I.V.; Makowska-Janusik, M.; Ebothe, J.; El Hichou, A.; El Idrissi, B.; Addou, M.

2002-01-01

The effective nanometer-sized thin layer (about 1-2 nm) located between a crystalline ZnS film and glass substrate is studied here using photoinduced optical and second-order non-linear optical (second harmonic generation (SHG) and electrooptics effects) techniques. A photoinduced shift of the effective energy gap is found for the first time in ZnS films doped with the same amount (4 at.%) of different elements, namely, In, Al and Sn. The photoinduced second-order non-linear optical properties (linear electrooptics (LEO) and SHG) of the specimens show a good correlation with the corresponding features of the linear optical susceptibilities, particularly, the imaginary part of dielectric susceptibility near the absorption edge. The maximal response of the photoinduced signal is observed for the pump-probe delaying time of about 20 ps. The performed experimental measurements indicate that the observed effects are stimulated by two factors: the first one is connected with the interface potential gradients at the glass-ZnS film boarder; the second one is a consequence of the additional polarization due to the insertion of Al, In and Sn atoms. The observed phenomenon may be proposed as a sensitive tool for investigation of thin semiconducting-glass interface layer. Moreover, such nanolayers may be applied in quantum electronic devices

Mocvd Growth of Group-III Nitrides on Silicon Carbide: From Thin Films to Atomically Thin Layers

Science.gov (United States)

Al Balushi, Zakaria Y.

Group-III nitride semiconductors (AlN, GaN, InN and their alloys) are considered one of the most important class of materials for electronic and optoelectronic devices. This is not limited to the blue light-emitting diode (LED) used for efficient solid-state lighting, but other applications as well, such as solar cells, radar and a variety of high frequency power electronics, which are all prime examples of the technological importance of nitride based wide bandgap semiconductors in our daily lives. The goal of this dissertation work was to explore and establish new growth schemes to improve the structural and optical properties of thick to atomically thin films of group-III nitrides grown by metalorganic chemical vapor deposition (MOCVD) on SiC substrates for future novel devices. The first research focus of this dissertation was on the growth of indium gallium nitride (InGaN). This wide bandgap semiconductor has attracted much research attention as an active layer in LEDs and recently as an absorber material for solar cells. InGaN has superior material properties for solar cells due to its wavelength absorption tunability that nearly covers the entire solar spectrum. This can be achieved by controlling the indium content in thick grown material. Thick InGaN films are also of interest as strain reducing based layers for deep-green and red light emitters. The growth of thick films of InGaN is, however, hindered by several combined problems. This includes poor incorporation of indium in alloys, high density of structural and morphological defects, as well as challenges associated with the segregation of indium in thick films. Overcoming some of these material challenges is essential in order integrate thick InGaN films into future optoelectronics. Therefore, this dissertation research investigated the growth mechanism of InGaN layers grown in the N-polar direction by MOCVD as a route to improve the structural and optical properties of thick InGaN films. The growth

Growth optimization and electronic structure of ultrathin CoO films on Ag(001): A LEED and photoemission study

Science.gov (United States)

Barman, Sukanta; Menon, Krishnakumar S. R.

2018-04-01

We present here a detailed growth optimization of CoO thin film on Ag(001) involving the effects of different growth parameters on the electronic structure. A well-ordered stoichiometric growth of 5 ML CoO film has been observed at 473 K substrate temperature and 1 × 10-6 mbar oxygen partial pressure. The growth at lower substrate temperature and oxygen partial pressure show non-stoichiometric impurity phases which have been investigated further to correlate the growth parameters with surface electronic structure. The coverage dependent valence band electronic structure of the films grown at optimized condition reveals the presence of interfacial states near the Fermi edge (EF) for lower film coverages. Presence of interfacial states in the stoichiometric films rules out their defect-induced origin. We argue that this is an intrinsic feature of transition metal monoxides like NiO, CoO, MnO in the low coverage regime.

Growth and BZO-doping of the nanostructured YBCO thin films on buffered metal substrates

DEFF Research Database (Denmark)

Huhtinen, H.; Irjala, M.; Paturi, P.

2010-01-01

The growth of the nanostructured YBa2Cu3O6+x (YBCO) films is investigated for the first time on biaxially textured NiW substrates used in coated conductor technology. The optimization process of superconducting layers is made in wide magnetic field and temperature range in order to understand...... the vortex pinning structure and mechanism in our films prepared from nanostructured material. Structural analysis shows that growth mechanism in YBCO films grown on NiW is completely different when compared to YBCO on STO. Films on NiW are much rougher, there is huge in-plane variation of YBCO crystals...... and moreover out-of-plane long range lattice ordering is greatly reduced. Magnetic measurements demonstrate that jc in films grown on NiW is higher in high magnetic fields and low temperatures. This effect is connected to the amount of pinning centres observed in films on metal substrates which are effective...

Diffusion and crystal growth in plasma deposed thin ITO films

International Nuclear Information System (INIS)

Steffen, H.; Wulff, H.; Quaas, M.; Tun, Tin Maung.; Hipple, R.

2000-01-01

Tin-doped indium oxide (ITO) films were deposited by means of DC-planar magnetron sputtering. A metallic In/Sn (90/10) target an Ar/O 2 gas mixture were used. The oxygen flow was varied between 0 and 2 sccm. Substrate voltages between 0 and -100 V were used. With increasing oxygen flow film structure and composition change from crystalline metallic In/Sn to amorphous ITO. Simultaneously the deposition rate decreases and the film density increases. The diffusion of oxygen into metallic In/Sn films and the amorphous-to-crystalline transformation of ITO were studied using in situ grazing incidence X-ray diffractometry (GIXRD), grazing incidence reflectometry (GIXR), and AFM. From the X-ray integral intensities diffusion constants, activation energies of the diffusion, reaction order and activation energy of the crystal growth were extracted. (authors)

Photoluminescence properties of ZnTe homoepitaxial films deposited by synchrotron-radiation-excited growth

International Nuclear Information System (INIS)

Nishio, Mitsuhiro; Hayashida, Kazuki; Harada, Hiroki; Mitsuishi, Yoshiaki; Guo Qixin; Ogawa, Hiroshi

2001-01-01

ZnTe homoepitaxial films have been deposited at substrate temperatures between 27 deg. C and 100 deg. C by synchrotron-radiation-excited growth using diethylzinc and diethyltelluride. Effects of diethylzinc transport rate and substrate temperature upon the photoluminescence properties of the ZnTe films have been clarified. Strong deep level emissions centered at 1.85 and 2.1 eV related to defects such as vacancy-impurity complex become emerged with increasing diethylzinc transport rate or substrate temperature. A sharply excitonic emission at 2.375 eV associated with shallow acceptors is observed and neither a donor-acceptor pair recombination nor a deep level luminescence signal is detected in the spectrum of the film grown under the nearly stoichiometric condition, which indicates that ZnTe films of good quality can be grown even at room temperature by this growth technique

Structure and wettability property of the growth and nucleation surfaces of thermally treated freestanding CVD diamond films

Science.gov (United States)

Pei, Xiaoqiang; Cheng, Shaoheng; Ma, Yibo; Wu, Danfeng; Liu, Junsong; Wang, Qiliang; Yang, Yizhou; Li, Hongdong

2015-08-01

This paper reports the surface features and wettability properties of the (1 0 0)-textured freestanding chemical vapor deposited (CVD) diamond films after thermal exposure in air at high temperature. Thermal oxidation at proper conditions eliminates selectively nanodiamonds and non-diamond carbons in the films. The growth side of the films contains (1 0 0)-oriented micrometer-sized columns, while its nucleation side is formed of nano-sized tips. The examined wettability properties of the as-treated diamond films reveal a hydrophilicity and superhydrophilicity on the growth surface and nucleation surface, respectively, which is determined by oxygen termination and geometry structure of the surface. When the surface termination is hydrogenated, the wettability of nucleation side converted from superhydrophilicity to high hydrophobicity, while the hydrophilicity of the growth side does not change significantly. The findings open a possibility for realizing freestanding diamond films having not only novel surface structures but also multifunction applications, especially proposed on the selected growth side or nucleation side in one product.

Growth analysis of cadmium sulfide thin films by atomic force microscopy

Energy Technology Data Exchange (ETDEWEB)

Moutinho, H.R.; Dhere, R.G.; Ramanathan, K. [National Renewable Energy Lab., Golden, CO (United States)] [and others

1996-05-01

CdS films have been deposited by solution growth on SnO{sub 2} and glass substrates. Nucleation on SnO{sub 2} occurs at early deposition times, and complete conformal coverage is observed at low thickness values. The average grain size of the CdS films is established at these early times. In films deposited on glass substrates, nucleation is slower and occurs through 3-dimensional islands that increase in size and number as deposition proceeds. Optical measurements show that the bandgap values of CdS films deposited on SnO{sub 2} depend mainly on substrate structure. Hydrogen heat treatment does not affect the surface morphology of the samples, but decreases bandgap values.

Effects of a magnetic field on growth of porous alumina films on aluminum

Energy Technology Data Exchange (ETDEWEB)

Ispas, Adriana; Bund, Andreas [Technische Universitaet Dresden, Physikalische Chemie und Elektrochemie, 01062 Dresden (Germany); Vrublevsky, Igor, E-mail: vrublevsky@bsuir.edu.b [Belarusian State University of Informatics and Radioelectronics Minsk, Department of Micro and Nanoelectronics, 220013 Minsk (Belarus)

2010-05-01

The effects induced by a magnetic field on the oxide film growth on aluminum in sulfuric, oxalic, phosphoric and sulfamic acid, and on current transients during re-anodizing of porous alumina films in the barrier-type electrolyte, were studied. Aluminum films of 100 nm thickness were prepared by thermal evaporation on Si wafer substrates. We could show that the duration of the anodizing process increased by 33% during anodizing in sulfuric acid when a magnetic field was applied (0.7 T), compared to the process without a magnetic field. Interestingly, such a magnetic field effect was not found during anodizing in oxalic and sulfamic acid. The pore intervals were decreased by ca. 17% in oxalic acid. These findings were attributed to variations in electronic properties of the anodic oxide films formed in various electrolytes and interpreted on the basis of the influence of trapped electrons on the mobility of ions migrating during the film growth. The spin dependent tunneling of electrons into the surface layer of the oxide under the magnetic field could be responsible for the shifts of the current transients to lower potentials during re-anodizing of heat-treated oxalic and phosphoric acid alumina films.

Optimizing growth conditions for electroless deposition of Au films ...

Indian Academy of Sciences (India)

Unknown

Optimizing growth conditions for electroless deposition of Au films on. Si(111) substrates. BHUVANA and G U KULKARNI*. Chemistry and Physics of Materials Unit and DST Unit on Nanoscience, Jawaharlal Nehru Centre for. Advanced Scientific Research, Jakkur PO, Bangalore 560 064, India. MS received 24 March 2006.

On the membrane approximation in isothermal film casting

Science.gov (United States)

Hagen, Thomas

2014-08-01

In this work, a one-dimensional model for isothermal film casting is studied. Film casting is an important engineering process to manufacture thin films and sheets from a highly viscous polymer melt. The model equations account for variations in film width and film thickness, and arise from thinness and kinematic assumptions for the free liquid film. The first aspect of our study is a rigorous discussion of the existence and uniqueness of stationary solutions. This objective is approached via the argument principle, exploiting the homotopy invariance of a family of analytic functions. As our second objective, we analyze the linearization of the governing equations about stationary solutions. It is shown that solutions for the associated boundary-initial value problem are given by a strongly continuous semigroup of bounded linear operators. To reach this result, we cast the relevant Cauchy problem in a more accessible form. These transformed equations allow us insight into the regularity of the semigroup, thus yielding the validity of the spectral mapping theorem for the semigroup and the spectrally determined growth property.

Interface-Limited Spherulitic Growth of Hydroxyapatite/Chondroitin Sulfate Composite Enamel-like Films

Science.gov (United States)

Ma, Guobin; Xu, Yifei; Wang, Xiyan; Wang, Mu

2012-02-01

Understanding and mimicking the growth of hard tissues such as tooth enamel may lead to innovative approaches toward engineering novel functional materials and providing new therapeutics. Up to now, in vitro growth of enamel-like materials is still a great challenge, and the microscopic formation mechanisms are far from well understood. Here we report synthesis of large-scale hydroxyapatite (HAP) and chondroitin sulfate (ChS) composite films by an efficient solution-air interface growth method. The products have the characteristic hierarchical prism structures of enamel and the mechanical properties comparable to dentin. We demonstrate that the films are assembled by spherulites nucleated at the solution surface. The growth of the spherulites is limited by the interfaces between them as well as between the solution and air, leading to the ordered prism structure. The results are beneficial for a clearer understanding of the fundamentals of tooth enamel formation.

Growth of CrTe thin films by molecular-beam epitaxy

International Nuclear Information System (INIS)

Sreenivasan, M.G.; Hou, X.J.; Teo, K.L.; Jalil, M.B.A.; Liew, T.; Chong, T.C.

2006-01-01

We report the growth of Cr 1-δ Te films on (100) GaAs substrates using ZnTe buffer layers by solid-source molecular-beam epitaxial technique. RHEED patterns indicate a clear structural change during the initial stages of deposition. Temperature-dependent magnetization results reveal that different NiAs-related phases of Cr 1-δ Te can be obtained at different substrate temperatures. By varying the film thickness, a metastable zinc blende structure of CrTe could be obtained at lower substrate temperature

Optical properties of organic semiconductor thin films. Static spectra and real-time growth studies

Energy Technology Data Exchange (ETDEWEB)

Heinemeyer, Ute

2009-07-20

The aim of this work was to establish the anisotropic dielectric function of organic thin films on silicon covered with native oxide and to study their optical properties during film growth. While the work focuses mainly on the optical properties of Diindenoperylene (DIP) films, also the optical response of Pentacene (PEN) films during growth is studied for comparison. Spectroscopic ellipsometry and differential reflectance spectroscopy are used to determine the dielectric function of the films ex-situ and in-situ, i.e. in air and in ultrahigh vacuum. Additionally, Raman- and fluorescence spectroscopy is utilized to characterize the DIP films serving also as a basis for spatially resolved optical measurements beyond the diffraction limit. Furthermore, X-ray reflectometry and atomic force microscopy are used to determine important structural and morphological film properties. The absorption spectrum of DIP in solution serves as a monomer reference. The observed vibronic progression of the HOMO-LUMO transition allows the determination of the Huang-Rhys parameter experimentally, which is a measure of the electronic vibrational coupling. The corresponding breathing modes are measured by Raman spectroscopy. The optical properties of DIP films on native oxide show significant differences compared to the monomer spectrum due to intermolecular interactions. First of all, the thin film spectra are highly anisotropic due to the structural order of the films. Furthermore the Frenkel exciton transfer is studied and the energy difference between Frenkel and charge transfer excitons is determined. Real-time measurements reveal optical differences between interfacial or surface molecules and bulk molecules that play an important role for device applications. They are not only performed for DIP films but also for PEN films. While for DIP films on glass the appearance of a new mode is visible, the spectra of PEN show a pronounced energy red-shift during growth. It is shown how the

Viscous bursting of suspended films

Science.gov (United States)

Debrégeas, G.; Martin, P.; Brochard-Wyart, F.

1995-11-01

Soap films break up by an inertial process. We present here the first observations on freely suspended films of long-chain polymers, where viscous effects are dominant and no surfactant is present. A hole is nucleated at time 0 and grows up to a radius R(t) at time t. A surprising feature is that the liquid from the hole is not collected into a rim (as it is in soap films): The liquid spreads out without any significant change of the film thickness. The radius R(t) grows exponentially with time, R~exp(t/τ) [while in soap films R(t) is linear]. The rise time τ~ηe/2γ where η is viscosity, e is thickness (in the micron range), and γ is surface tension. A simple model is developed to explain this growth law.

The relationships among iron supplement use, Hb concentration and linear growth in young children: Ethiopian Demographic and Health Survey.

Science.gov (United States)

Mohammed, Shimels Hussien; Esmaillzadeh, Ahmad

2017-11-01

Growth faltering and anaemia remain unacceptably high among infants and young children in Ethiopia. In this study, we investigated the relationships among Fe supplement use (ISU), Hb concentration and linear growth, hypothesising positive relationships between ISU and Hb, ISU and linear growth and Hb and linear growth. We used a nationally representative data of 2400 children aged 6-24 months from the Ethiopian Demographic and Health Survey (EDHS) 2011, conducted following a stratified, two-stage cluster sampling. We examined the links by Pearson's correlation, bivariate and multivariate linear regression analyses and reported adjusted estimates. We found that ISU was not significantly associated with either Hb (β=1·09; 95 % CI -2·73, 5·01, P=0·567) or linear growth (β=0·07; 95 % CI -0·06, 0·21, P=0·217). We found a positive, however, weak, correlation between Hb and linear growth (r 0·09; 95 % CI 0·06, 0·11, PHb predicted linear growth independent of a variety dietary and non-dietary factors (β=0·08; 95 % CI 0·04, 0·11, PHb; age, birth type, size at birth, sex, breast-feeding duration, dietary diversity and deworming were independently associated with linear growth, indicating that Hb and linear growth are multifactorial with both nutritional and non-nutritional factors implicated. Further studies, with better design and exposure assessment, are warranted on the relation of ISU with Hb or linear growth.

The influence of energetic bombardment on the structure formation of sputtered zinc oxide films. Development of an atomistic growth model and its application to tailor thin film properties

Energy Technology Data Exchange (ETDEWEB)

Koehl, Dominik

2011-02-17

The focus of this work is the investigation of the growth of zinc oxide (ZnO) thin films. It is demonstrated that with a modified, ion beam assisted sputtering (IBAS) process, zinc oxide films can be deposited which exhibit a markedly improved crystalline order. Furthermore, it is demonstrated that intense energetic oxygen ion bombardment can be utilized to change film texture from the typical (002)-self-texture to an a-axis texture where the (002)-planes are perpendicular to the substrate surface. An understanding of the underlying mechanisms is developed which also facilitates a more detailed understanding of the action of ion bombardment during zinc oxide film growth. It is shown that zinc oxide films are susceptible to the influence of ion bombardment particularly in the nucleation regime of growth and that this finding is generally true for all observed structural changes induced by ion bombardment with various species, energies and flux densities. It is demonstrated not only that the initial growth stage plays an important role in the formation of a preferred growth orientation but also that the action of texture forming mechanisms in subsequent growth stages is comparatively weak. (orig.)

The influence of energetic bombardment on the structure formation of sputtered zinc oxide films. Development of an atomistic growth model and its application to tailor thin film properties

International Nuclear Information System (INIS)

Koehl, Dominik

2011-01-01

The focus of this work is the investigation of the growth of zinc oxide (ZnO) thin films. It is demonstrated that with a modified, ion beam assisted sputtering (IBAS) process, zinc oxide films can be deposited which exhibit a markedly improved crystalline order. Furthermore, it is demonstrated that intense energetic oxygen ion bombardment can be utilized to change film texture from the typical (002)-self-texture to an a-axis texture where the (002)-planes are perpendicular to the substrate surface. An understanding of the underlying mechanisms is developed which also facilitates a more detailed understanding of the action of ion bombardment during zinc oxide film growth. It is shown that zinc oxide films are susceptible to the influence of ion bombardment particularly in the nucleation regime of growth and that this finding is generally true for all observed structural changes induced by ion bombardment with various species, energies and flux densities. It is demonstrated not only that the initial growth stage plays an important role in the formation of a preferred growth orientation but also that the action of texture forming mechanisms in subsequent growth stages is comparatively weak. (orig.)

The charge transfer structure and effective energy transfer in multiplayer assembly film

International Nuclear Information System (INIS)

Li Mingqiang; Jian Xigao

2005-01-01

Charge transfer multiplayer films have been prepared by layer-by-layer self-assembly technique. The films incorporate the rare-earth-containing polyoxometalate K 11 [Eu{PW 11 O 39 } 2 ].nH 2 O and the rich electron polyelectrolyte poly(3-viny-1-methyl-pyridine) quaternary ammonium and display a linear increase in the absorption and film thickness with the number of deposition cycles. Ultraviolet and visible absorption spectra, atomic force micrographs, small-angle X-ray reflectivity measurements, and photoluminescence spectra were used to determine the structure of films. Linear and regular multilayer growth was observed. We can observe the formation of charge transfer complex compound in multiplayer by layer-by-layer assembly method. Most importantly, the luminescence spectra show the charge transfer band in assembly films, which suggest that energy could be effectively transferred to rare earth ions in assembly multiplayer films

Controlled Growth of Ultrathin Film of Organic Semiconductors by Balancing the Competitive Processes in Dip-Coating for Organic Transistors.

Science.gov (United States)

Wu, Kunjie; Li, Hongwei; Li, Liqiang; Zhang, Suna; Chen, Xiaosong; Xu, Zeyang; Zhang, Xi; Hu, Wenping; Chi, Lifeng; Gao, Xike; Meng, Yancheng

2016-06-28

Ultrathin film with thickness below 15 nm of organic semiconductors provides excellent platform for some fundamental research and practical applications in the field of organic electronics. However, it is quite challenging to develop a general principle for the growth of uniform and continuous ultrathin film over large area. Dip-coating is a useful technique to prepare diverse structures of organic semiconductors, but the assembly of organic semiconductors in dip-coating is quite complicated, and there are no reports about the core rules for the growth of ultrathin film via dip-coating until now. In this work, we develop a general strategy for the growth of ultrathin film of organic semiconductor via dip-coating, which provides a relatively facile model to analyze the growth behavior. The balance between the three direct factors (nucleation rate, assembly rate, and recession rate) is the key to determine the growth of ultrathin film. Under the direction of this rule, ultrathin films of four organic semiconductors are obtained. The field-effect transistors constructed on the ultrathin film show good field-effect property. This work provides a general principle and systematic guideline to prepare ultrathin film of organic semiconductors via dip-coating, which would be highly meaningful for organic electronics as well as for the assembly of other materials via solution processes.

Growth of high Tc Bi-Sr-Ca-Cu-O thick films

International Nuclear Information System (INIS)

Chaudhry, Sangeeta; Khare, Neeraj; Gupta, A.K.; Nagpal, K.C.; Ojha, V.N.; Reddy, G.S.N.; Tomar, V.S.

1991-01-01

Thick films of Bi-Sr-Ca-Cu-O were deposited on (100) MgO substrates by screen-printing technique with the starting composition 1112. To attain the superconducting state, the films were subjected to two-step heat-treatment. R-T and XRD have been studied for films annealed at different durations of the second step. Initially T c (R=O) increased from 77 to 103 K as the annealing duration was increased after which T c decreased. Kinetics of the growth of high T c phase is discussed in the light of results. (author). 7 refs., 2 figs., 1 tab

Ultra-Thin Atomic Layer Deposited TiN Films: Non-Linear I–V Behaviour and the Importance of Surface Passivation

NARCIS (Netherlands)

Van Hao, B.; Aarnink, Antonius A.I.; Kovalgin, Alexeij Y.; Wolters, Robertus A.M.

2011-01-01

We report the electrical resistivity of atomic layer deposited TiN thin films in the thickness range 2.5-20 nm. The measurements were carried out using the circular transfer length method structures. For the films with thickness in the range of 10-20 nm, the measurements exhibited linear

Growth of conductive HfO{sub 2-x} thin films by reactive molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Hildebrandt, Erwin; Kurian, Jose; Alff, Lambert [Institut fuer Materialwissenschaft, TU Darmstadt (Germany); Kleebe, Hans-Joachim [Institut fuer Angewandte Geowissenschaften, TU Darmstadt (Germany)

2009-07-01

Thin films of oxygen deficient hafnium oxide were grown on single crystal c-cut and r-cut sapphire substrates by reactive molecular beam epitaxy. The oxidation conditions during growth were varied within a wide range using RF-activated oxygen. Hafnium oxide thin films were characterized using X-ray diffraction, resistivity measurements ({rho}-T) and transmission electron microscopy (TEM). The results show a dramatic increase in conductivity of the deposited oxygen deficient hafnium oxide thin films with decreasing oxidation conditions during growth. The electrical properties of deficient hafnium oxide thin films varied from insulating over semiconducting to conducting. X-ray diffraction data as well as TEM data rule out the possibility of conductivity due to metallic hafnium.

Mechanistic Insights into Growth of Surface‐Mounted Metal‐Organic Framework Films Resolved by Infrared (Nano‐) Spectroscopy

OpenAIRE

Delen, Guusje; Ristanović, Zoran; Mandemaker, Laurens D. B.; Weckhuysen, Bert M.

2017-01-01

Abstract Control over assembly, orientation, and defect‐free growth of metal‐organic framework (MOF) films is crucial for their future applications. A layer‐by‐layer approach is considered a suitable method to synthesize highly oriented films of numerous MOF topologies, but the initial stages of the film growth remain poorly understood. Here we use a combination of infrared (IR) reflection absorption spectroscopy and atomic force microscopy (AFM)‐IR imaging to investigate the assembly and gro...

The growth of GaN films by alternate source gas supply hot-mesh CVD method

Energy Technology Data Exchange (ETDEWEB)

Komae, Yasuaki; Saitou, Takeshi [Nagaoka University of Technology, Nagaoka 940-2188 (Japan); Suemitsu, Maki; Ito, Takashi [Center of Interdisciplinary Research, Tohoku University, Sendai 980-8578 (Japan); Endoh, Tetsuo [Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577 (Japan); Nakazawa, Hideki [Faculty of Science and Technology, Hirosaki University, Hirosaki 036-8561 (Japan); Narita, Yuzuru [Faculty of Engineering, Yamagata University, Yonezawa 992-8510 (Japan); Takata, Masasuke; Akahane, Tadashi [Nagaoka University of Technology, Nagaoka 940-2188 (Japan); Yasui, Kanji, E-mail: kyasui@vos.nagaokaut.ac.j [Nagaoka University of Technology, Nagaoka 940-2188 (Japan)

2009-04-30

Gallium nitride (GaN) films and Aluminium nitride (AlN) layers were deposited on SiC/Si (111) substrates by an alternating source gas supply or an intermittent supply of a source gas such as ammonia (NH{sub 3}), trimethylgallium (TMG) or trimethylaluminum (TMA) in a hot-mesh chemical vapor deposition (CVD) apparatus. The AlN layer was deposited as a buffer layer using NH{sub 3} and TMA on a SiC layer grown by carbonization on Si substrates using propane (C{sub 3}H{sub 8}). GaN films were grown on an AlN layer by a reaction between NH{sub x} radicals generated on a ruthenium (Ru) coated tungsten (W)-mesh and TMG molecules. An alternating source gas supply or an intermittent supply of one of the source gases during the film growth are expected to be effective for the suppression of gas phase reactions and for the enhancement of precursor migration on the substrate surface. By the intermittent supply of alkylmetal gas only during the growth of the AlN layer, the defect generation in the GaN films was reduced. GaN film growth by intermittent supply on an AlN buffer layer, however, did not lead to the improvement of the film quality.

The effect of changes in sea surface temperature on linear growth of Porites coral in Ambon Bay

International Nuclear Information System (INIS)

Corvianawatie, Corry; Putri, Mutiara R.; Cahyarini, Sri Y.

2015-01-01

Coral is one of the most important organisms in the coral reef ecosystem. There are several factors affecting coral growth, one of them is changes in sea surface temperature (SST). The purpose of this research is to understand the influence of SST variability on the annual linear growth of Porites coral taken from Ambon Bay. The annual coral linear growth was calculated and compared to the annual SST from the Extended Reconstructed Sea Surface Temperature version 3b (ERSST v3b) model. Coral growth was calculated by using Coral X-radiograph Density System (CoralXDS) software. Coral sample X-radiographs were used as input data. Chronology was developed by calculating the coral’s annual growth bands. A pair of high and low density banding patterns observed in the coral’s X-radiograph represent one year of coral growth. The results of this study shows that Porites coral extents from 2001-2009 and had an average growth rate of 1.46 cm/year. Statistical analysis shows that the annual coral linear growth declined by 0.015 cm/year while the annual SST declined by 0.013°C/year. SST and the annual linear growth of Porites coral in the Ambon Bay is insignificantly correlated with r=0.304 (n=9, p>0.05). This indicates that annual SST variability does not significantly influence the linear growth of Porites coral from Ambon Bay. It is suggested that sedimentation load, salinity, pH or other environmental factors may affect annual linear coral growth

The effect of changes in sea surface temperature on linear growth of Porites coral in Ambon Bay

Energy Technology Data Exchange (ETDEWEB)

Corvianawatie, Corry, E-mail: corvianawatie@students.itb.ac.id; Putri, Mutiara R., E-mail: mutiara.putri@fitb.itb.ac.id [Oceanography Study Program, Bandung Institute of Technology (ITB), Jl. Ganesha 10 Bandung (Indonesia); Cahyarini, Sri Y., E-mail: yuda@geotek.lipi.go.id [Research Center for Geotechnology, Indonesian Institute of Sciences (LIPI), Bandung (Indonesia)

2015-09-30

Coral is one of the most important organisms in the coral reef ecosystem. There are several factors affecting coral growth, one of them is changes in sea surface temperature (SST). The purpose of this research is to understand the influence of SST variability on the annual linear growth of Porites coral taken from Ambon Bay. The annual coral linear growth was calculated and compared to the annual SST from the Extended Reconstructed Sea Surface Temperature version 3b (ERSST v3b) model. Coral growth was calculated by using Coral X-radiograph Density System (CoralXDS) software. Coral sample X-radiographs were used as input data. Chronology was developed by calculating the coral’s annual growth bands. A pair of high and low density banding patterns observed in the coral’s X-radiograph represent one year of coral growth. The results of this study shows that Porites coral extents from 2001-2009 and had an average growth rate of 1.46 cm/year. Statistical analysis shows that the annual coral linear growth declined by 0.015 cm/year while the annual SST declined by 0.013°C/year. SST and the annual linear growth of Porites coral in the Ambon Bay is insignificantly correlated with r=0.304 (n=9, p>0.05). This indicates that annual SST variability does not significantly influence the linear growth of Porites coral from Ambon Bay. It is suggested that sedimentation load, salinity, pH or other environmental factors may affect annual linear coral growth.

Comparative Review on Thin Film Growth of Iron-Based Superconductors

Directory of Open Access Journals (Sweden)

Yoshinori Imai

2017-07-01

Full Text Available Since the discovery of the novel iron-based superconductors, both theoretical and experimental studies have been performed intensively. Because iron-based superconductors have a smaller anisotropy than high-Tc cuprates and a high superconducting transition temperature, there have been a lot of researchers working on the film fabrication of iron-based superconductors and their application. Accordingly, many novel features have been reported in the films of iron-based superconductors, for example, the fabrication of the epitaxial film with a higher Tc than bulk samples, the extraction of the metastable phase which cannot be obtained by the conventional solid state reaction, and so on. In this paper, we review the progress of research on thin film fabrications of iron-based superconductors, especially the four categories: LnFeAs(O,F (Ln = Lanthanide, AEFe2As2 (AE = Alkaline-earth metal, FeCh (Ch = Chalcogen, and FeSe monolayer. Furthermore, we focus on two important topics in thin films of iron-based superconductors; one is the substrate material for thin film growth on the iron-based superconductors, and the other is the whole phase diagram in FeSe1-xTex which can be obtained only by using film-fabrication technique.

Investigation of growth, coverage and effectiveness of plasma assisted nano-films of fluorocarbon

International Nuclear Information System (INIS)

Joshi, Pratik P.; Pulikollu, Rajasekhar; Higgins, Steven R.; Hu Xiaoming; Mukhopadhyay, S.M.

2006-01-01

Plasma-assisted functional films have significant potential in various engineering applications. They can be tailored to impart desired properties by bonding specific molecular groups to the substrate surface. The aim of this investigation was to develop a fundamental understanding of the atomic level growth, coverage and functional effectiveness of plasma nano-films on flat surfaces and to explore their application-potential for complex and uneven shaped nano-materials. In this paper, results on plasma-assisted nano-scale fluorocarbon films, which are known for imparting inertness or hydrophobicity to the surface, will be discussed. The film deposition was studied as a function of time on flat single crystal surfaces of silicon, sapphire and graphite, using microwave plasma. X-ray photoelectron spectroscopy (XPS) was used for detailed study of composition and chemistry of the substrate and coating atoms, at all stages of deposition. Atomic force microscopy (AFM) was performed in parallel to study the coverage and growth morphology of these films at each stage. Combined XPS and AFM results indicated complete coverage of all the substrates at the nanometer scale. It was also shown that these films grew in a layer-by-layer fashion. The nano-films were also applied to complex and uneven shaped nano-structured and porous materials, such as microcellular porous foam and nano fibers. It was seen that these nano-films can be a viable approach for effective surface modification of complex or uneven shaped nano-materials

Enhancing performance of a linear dielectric based concentrating photovoltaic system using a reflective film along the edge

International Nuclear Information System (INIS)

Baig, Hasan; Sarmah, Nabin; Chemisana, Daniel; Rosell, Joan; Mallick, Tapas K.

2014-01-01

In the present study, we model and analyse the performance of a dielectric based linear concentrating photovoltaic system using ray tracing and finite element methods. The results obtained are compared with the experiments. The system under study is a linear asymmetric CPC (Compound Parabolic Concentrator) designed to operate under extreme incident angles of 0° and 55° and have a geometrical concentration ratio of 2.8×. Initial experiments showed a maximum PR (power ratio) of 2.2 compared to a non concentrating counterpart. An improvement to this has been proposed and verified by adding a reflective film along the edges of the concentrator to capture the escaping rays and minimise optical losses. The addition of the reflective film changes the incoming distribution on the solar cell. Results show an increase of 16% in the average power output while using this reflective film. On including the thermal effects it was found that the overall benefit changes to about 6% while using a reflective film. Additionally, the effects of the non-uniformity of the incoming radiation are also analysed and reported for both the cases. It is found that adding the reflective film drops the maximum power at the output by only 0.5% due to the effect of non-uniformity. - Highlights: • Optical, thermal and electrical analysis of a concentrating photovoltaic system. • Improvement in performance by use of reflective film along the edge. • Experimental validation of results. • Effects of non-uniform illumination on the performance of the CPV system. • Impact of temperature profile on the overall performance

Growth and surface characterization of sputter-deposited molybdenum oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Ramana, Chintalapalle V.; Atuchin, Victor V.; Kesler, V. G.; Kochubey, V. A.; Pokrovsky, L. D.; Shutthanandan, V.; Becker, U.; Ewing, Rodney C.

2007-04-15

Molybdenum oxide thin films were produced by magnetron sputtering using a molybdenum (Mo) target. The sputtering was performed in a reactive atmosphere of argon-oxygen gas mixture under varying conditions of substrate temperature (Ts) and oxygen partial pressure (pO2). The effect of Ts and pO2 on the growth and microstructure of molybdenum oxide films was examined in detail using reflection high-energy electron diffraction (RHEED), Rutherford backscattering spectrometry (RBS), energy dispersive X-ray spectrometry (EDS), X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy (SEM) measurements. The analyses indicate that the effect of Ts and pO2 on the microstructure and phase of the grown molybdenum oxide thin films is remarkable. RHEED and RBS results indicate that the films grown at 445 *C under 62.3% O2 pressure were stoichiometric and polycrystalline MoO3. Films grown at lower pO2 were nonstoichiometric MoOx films with the presence of secondary phase. The microstructure of the grown Mo oxide films is discussed and conditions were optimized to produce phase pure, stoichiometric, and highly textured polycrystalline MoO3 films.

Modeling growth kinetics of thin films made by atomic layer deposition in lateral high-aspect-ratio structures

Science.gov (United States)

Ylilammi, Markku; Ylivaara, Oili M. E.; Puurunen, Riikka L.

2018-05-01

The conformality of thin films grown by atomic layer deposition (ALD) is studied using all-silicon test structures with long narrow lateral channels. A diffusion model, developed in this work, is used for studying the propagation of ALD growth in narrow channels. The diffusion model takes into account the gas transportation at low pressures, the dynamic Langmuir adsorption model for the film growth and the effect of channel narrowing due to film growth. The film growth is calculated by solving the diffusion equation with surface reactions. An efficient analytic approximate solution of the diffusion equation is developed for fitting the model to the measured thickness profile. The fitting gives the equilibrium constant of adsorption and the sticking coefficient. This model and Gordon's plug flow model are compared. The simulations predict the experimental measurement results quite well for Al2O3 and TiO2 ALD processes.

Surfactant-mediated growth of ultrathin Ge and Si films and their interfaces: Interference-enhanced Raman study

OpenAIRE

Kanakaraju, S; Sood, AK; Mohan, S

2000-01-01

We report on the growth and interfaces of ultrathin polycrystalline Ge and Si films when they are grown on each other using ion beam sputter deposition with and without surfactant at different growth temperatures, studied using interference enhanced Raman spectroscopy. Ge films grown on Si without surfactant show Ge segregation at the interfaces forming an alloy of GexSi1-x as indicated by the Ge-Si Raman mode. However, use of Sb as surfactant strongly suppresses the intermixing. Also Si film...

Vanadium and molybdenum oxide thin films on Au(111). Growth and surface characterization

Energy Technology Data Exchange (ETDEWEB)

Guimond, Sebastien

2009-06-04

The growth and the surface structure of well-ordered V{sub 2}O{sub 3}, V{sub 2}O{sub 5} and MoO{sub 3} thin films have been investigated in this work. These films are seen as model systems for the study of elementary reaction steps occurring on vanadia and molybdena-based selective oxidation catalysts. It is shown that well-ordered V{sub 2}O{sub 3}(0001) thin films can be prepared on Au(111). The films are terminated by vanadyl groups which are not part of the V{sub 2}O{sub 3} bulk structure. Electron irradiation specifically removes the oxygen atoms of the vanadyl groups, resulting in a V-terminated surface. The fraction of removed vanadyl groups is controlled by the electron dose. Such surfaces constitute interesting models to probe the relative role of both the vanadyl groups and the undercoordinated V ions at the surface of vanadia catalysts. The growth of well-ordered V{sub 2}O{sub 5}(001) and MoO{sub 3}(010) thin films containing few point defects is reported here for the first time. These films were grown on Au(111) by oxidation under 50 mbar O{sub 2} in a dedicated high pressure cell. Contrary to some of the results found in the literature, the films are not easily reduced by annealing in UHV. This evidences the contribution of radiation and surface contamination in some of the reported thermal reduction experiments. The growth of ultrathin V{sub 2}O{sub 5} and MoO{sub 3} layers on Au(111) results in formation of interface-specific monolayer structures. These layers are coincidence lattices and they do not correspond to any known oxide bulk structure. They are assumed to be stabilized by electronic interaction with Au(111). Their formation illustrates the polymorphic character and the ease of coordination units rearrangement which are characteristic of both oxides. The formation of a second layer apparently precedes the growth of bulk-like crystallites for both oxides. This observation is at odds with a common assumption that crystals nucleate as soon as a

Vanadium and molybdenum oxide thin films on Au(111). Growth and surface characterization

International Nuclear Information System (INIS)

Guimond, Sebastien

2009-01-01

The growth and the surface structure of well-ordered V 2 O 3 , V 2 O 5 and MoO 3 thin films have been investigated in this work. These films are seen as model systems for the study of elementary reaction steps occurring on vanadia and molybdena-based selective oxidation catalysts. It is shown that well-ordered V 2 O 3 (0001) thin films can be prepared on Au(111). The films are terminated by vanadyl groups which are not part of the V 2 O 3 bulk structure. Electron irradiation specifically removes the oxygen atoms of the vanadyl groups, resulting in a V-terminated surface. The fraction of removed vanadyl groups is controlled by the electron dose. Such surfaces constitute interesting models to probe the relative role of both the vanadyl groups and the undercoordinated V ions at the surface of vanadia catalysts. The growth of well-ordered V 2 O 5 (001) and MoO 3 (010) thin films containing few point defects is reported here for the first time. These films were grown on Au(111) by oxidation under 50 mbar O 2 in a dedicated high pressure cell. Contrary to some of the results found in the literature, the films are not easily reduced by annealing in UHV. This evidences the contribution of radiation and surface contamination in some of the reported thermal reduction experiments. The growth of ultrathin V 2 O 5 and MoO 3 layers on Au(111) results in formation of interface-specific monolayer structures. These layers are coincidence lattices and they do not correspond to any known oxide bulk structure. They are assumed to be stabilized by electronic interaction with Au(111). Their formation illustrates the polymorphic character and the ease of coordination units rearrangement which are characteristic of both oxides. The formation of a second layer apparently precedes the growth of bulk-like crystallites for both oxides. This observation is at odds with a common assumption that crystals nucleate as soon as a monolayer is formed dur-ing the preparation of supported vanadia

In situ growth of p and n-type graphene thin films and diodes by pulsed laser deposition

KAUST Repository

Sarath Kumar, S. R.

2013-11-07

We report the in situ growth of p and n-type graphene thin films by ultraviolet pulsed laser deposition in the presence of argon and nitrogen, respectively. Electron microscopy and Raman studies confirmed the growth, while temperature dependent electrical conductivity and Seebeck coefficient studies confirmed the polarity type of graphene films. Nitrogen doping at different sites of the honeycomb structure, responsible for n-type conduction, is identified using X-ray photoelectron spectroscopy, for films grown in nitrogen. A diode-like rectifying behavior is exhibited by p-n junction diodes fabricated using the graphene films.

Influence of deposition parameters on the refractive index and growth rate of diamond-like carbon films

International Nuclear Information System (INIS)

Zhang, G.F.; Zheng, X.; Guo, L.J.; Liu, Z.T.; Xiu, N.K.

1994-01-01

In order to use diamond-like carbon (DLC) films as protective and antireflection coatings for IR optical materials exposed to hostile environments, an investigation has been systematically conducted on the influence of the deposition parameters on the refractive index and growth rate of DLC films, which are two of the most important parameters in evaluating optical characteristics of antireflection coatings. The experimental results show that both the refractive index and growth rate of DLC films depend strongly on the negative d.c. bias voltage. The refractive index increases with increasing bias voltage and decreases with increasing partial pressure of the hydrocarbon gas and total flow rate of the mixture. The growth rate increases greatly when the bias voltage is larger than a threshold value. The various parameters which influence the structure and properties of DLC films are interrelated. Fourier transform IR spectroscopy results show that the strength of the C-H stretching absorption band in the range 3300-2850 cm -1 is gradually weakened with increasing negative bias voltage and argon concentration. High energy bombardment of the growing film plays an important role in the structure and hence the properties of DLC films. (orig.)

The effect of zinc supplementation on linear growth, body composition, and growth factors in preterm infants.

Science.gov (United States)

Díaz-Gómez, N Marta; Doménech, Eduardo; Barroso, Flora; Castells, Silvia; Cortabarria, Carmen; Jiménez, Alejandro

2003-05-01

The aim of our study was to evaluate the effect of zinc supplementation on linear growth, body composition, and growth factors in premature infants. Thirty-six preterm infants (gestational age: 32.0 +/- 2.1 weeks, birth weight: 1704 +/- 364 g) participated in a longitudinal double-blind, randomized clinical trial. They were randomly allocated either to the supplemental (S) group fed with a standard term formula supplemented with zinc (final content 10 mg/L) and a small quantity of copper (final content 0.6 mg/L), or to the placebo group fed with the same formula without supplementation (final content of zinc: 5 mg/L and copper: 0.4 mg/L), from 36 weeks postconceptional age until 6 months corrected postnatal age. At each evaluation, anthropometric variables and bioelectrical impedance were measured, a 3-day dietary record was collected, and a blood sample was taken. We analyzed serum levels of total alkaline phosphatase, skeletal alkaline phosphatase (sALP), insulin growth factor (IGF)-I, IGF binding protein-3, IGF binding protein-1, zinc and copper, and the concentrations of zinc in erythrocytes. The S group had significantly higher zinc levels in serum and erythrocytes and lower serum copper levels with respect to the placebo group. We found that the S group had a greater linear growth (from baseline to 3 months corrected age: Delta score deviation standard length: 1.32 +/-.8 vs.38 +/-.8). The increase in total body water and in serum levels of sALP was also significantly higher in the S group (total body water: 3 months; corrected age: 3.8 +/-.5 vs 3.5 +/-.4 kg, 6 months; corrected age: 4.5 +/-.5 vs 4.2 +/-.4 kg; sALP: 3 months; corrected age: 140.2 +/- 28.7 vs 118.7 +/- 18.8 micro g/L). Zinc supplementation has a positive effect on linear growth in premature infants.

Influence of Te and Se doping on ZnO films growth by SILAR method

Science.gov (United States)

Güney, Harun; Duman, Ćaǧlar

2016-04-01

The AIP Successive ionic layer adsorption and reaction (SILAR) is an economic and simple method to growth thin films. In this study, SILAR method is used to growth Selenium (Se) and Tellurium (Te) doped zinc oxide (ZnO) thin films with different doping rates. For characterization of the films X-ray diffraction (XRD), absorbance and scanning electron microscopy (SEM) are used. XRD results are showed well-defined strongly (002) oriented crystal structure for all samples. Also, absorbance measurements show, Te and Se concentration are proportional and inversely proportional with band gap energy, respectively. SEM measurements show that the surface morphology and thickness of the material varied with Se and/or Te and varying concentrations.

Influence of Te and Se doping on ZnO films growth by SILAR method

International Nuclear Information System (INIS)

Güney, Harun; Duman, Çağlar

2016-01-01

The AIP Successive ionic layer adsorption and reaction (SILAR) is an economic and simple method to growth thin films. In this study, SILAR method is used to growth Selenium (Se) and Tellurium (Te) doped zinc oxide (ZnO) thin films with different doping rates. For characterization of the films X-ray diffraction (XRD), absorbance and scanning electron microscopy (SEM) are used. XRD results are showed well-defined strongly (002) oriented crystal structure for all samples. Also, absorbance measurements show, Te and Se concentration are proportional and inversely proportional with band gap energy, respectively. SEM measurements show that the surface morphology and thickness of the material varied with Se and/or Te and varying concentrations.

Influence of Te and Se doping on ZnO films growth by SILAR method

Energy Technology Data Exchange (ETDEWEB)

Güney, Harun, E-mail: harunguney25@hotmail.com [Department of Electric and Energy, Vocation High School, Ağrı İbrahim Çeçen University (Turkey); Duman, Çağlar, E-mail: caglarduman@erzurum.edu.tr [Department of Electrical and Electronic Engineering, Faculty of Engineering, Erzurum Technical University (Turkey)

2016-04-18

The AIP Successive ionic layer adsorption and reaction (SILAR) is an economic and simple method to growth thin films. In this study, SILAR method is used to growth Selenium (Se) and Tellurium (Te) doped zinc oxide (ZnO) thin films with different doping rates. For characterization of the films X-ray diffraction (XRD), absorbance and scanning electron microscopy (SEM) are used. XRD results are showed well-defined strongly (002) oriented crystal structure for all samples. Also, absorbance measurements show, Te and Se concentration are proportional and inversely proportional with band gap energy, respectively. SEM measurements show that the surface morphology and thickness of the material varied with Se and/or Te and varying concentrations.

Setup for in situ X-ray diffraction studies of thin film growth by magnetron sputtering

CERN Document Server

Ellmer, K; Weiss, V; Rossner, H

2001-01-01

A novel method is described for the in situ-investigation of nucleation and growth of thin films during magnetron sputtering. Energy dispersive X-ray diffraction with synchrotron light is used for the structural analysis during film growth. An in situ-magnetron sputtering chamber was constructed and installed at a synchrotron radiation beam line with a bending magnet. The white synchrotron light (1-70 keV) passes the sputtering chamber through Kapton windows and hits one of the substrates on a four-fold sample holder. The diffracted beam, observed under a fixed diffraction angle between 3 deg. and 10 deg., is energy analyzed by a high purity Ge-detector. The in situ-EDXRD setup is demonstrated for the growth of tin-doped indium oxide (ITO) films prepared by reactive magnetron sputtering from a metallic target.

Growth and characterization of ZnO thin films prepared by electrodeposition technique

Energy Technology Data Exchange (ETDEWEB)

Fahoume, M.; Maghfoul, O.; Aggour, M. [L.P.M.C., Faculte des Sciences, Universite Ibn Tofail, BP. 133-14000 Kenitra (Morocco); Hartiti, B. [L.P.M.A.E.R., Faculte des Sciences et Techniques, B.P. 146 Mohammedia (Morocco); Chraibi, F.; Ennaoui, A. [L.P.M., Faculte des Sciences, Universite Mohammed V, BP.1014 Rabat (Morocco)

2006-06-15

ZnO thin films were deposited on either indium tin oxide-coated glass or copper substrate by the electrodeposition process, using zinc chloride and flowing air as precursors. The effect of pH on the structural and morphological ZnO films was studied and the optimum deposition conditions have been outlined. The kinetics of the growth of the films have been investigated. We note that the rate of deposition of ZnO in an acidic solution was larger than in a basic solution. The structure of the films was studied using X-ray diffractometry (XRD) and transmission electron microscopy (TEM). The surface morphology and thickness of the films were determined using scanning electron microscopy. The X-ray diffraction analysis shows that the films are polycrystalline with hexagonal crystal structure (zincite) at pH 4. The optical transmittance of ZnO decreases with varying film thickness. The optical energy bandgap was found to be 3.26eV. (author)

Study both films structure and fractal growth in the T-10 tokamak

International Nuclear Information System (INIS)

Khimchenko, L.N.; Budaev, V.P.; Guseva, M.I.; Kamneva, S.A.; Kolbasov, B.N.; Kuteev, B.V.; Martynenko, Yu.V.; Svechnikov, N.Yu.; Stankevich, V.G.; Loginov, B.A.; Romanov, P.B.

2005-01-01

In the paper results of films growth mechanism study, their internal structure are summarized. The mechanism leading to hydrogen capture effect on the first wall at over dusting stage is stated. Films internal structure have been studied with help of synchrotron radiation, electron paramagnetic resonance, IR reflection spectra, thermal gravimetric methods, spectroscopy in the vision spectrum range and UV vacuum range. Structure of the films surfaces have been examined with help of electron microscopy, probe scanning tunnel and atom-force microscopy, as well as miniature scanning tunnel microscope placed in the T-10 tokamak

Growth of Pb(Ti,Zr)O 3 thin films by metal-organic molecular beam epitaxy

Science.gov (United States)

Avrutin, V.; Liu, H. Y.; Izyumskaya, N.; Xiao, B.; Özgür, Ü.; Morkoç, H.

2009-02-01

Single-crystal Pb(Zr xTi 1-x)O 3 thin films have been grown on (0 0 1) SrTiO 3 and SrTiO 3:Nb substrates by molecular beam epitaxy using metal-organic source of Zr and two different sources of reactive oxygen—RF plasma and hydrogen-peroxide sources. The same growth modes and comparable structural properties were observed for the films grown with both oxygen sources, while the plasma source allowed higher growth rates. The films with x up to 0.4 were single phase, while attempts to increase x beyond gave rise to the ZrO 2 second phase. The effects of growth conditions on growth modes, Zr incorporation, and phase composition of the Pb(Zr xTi 1-x)O 3 films are discussed. Electrical and ferroelectric properties of the Pb(Zr xTi 1-x)O 3 films of ~100 nm in thickness grown on SrTiO 3:Nb were studied using current-voltage, capacitance-voltage, and polarization-field measurements. The single-phase films show low leakage currents and large breakdown fields, while the values of remanent polarization are low (around 5 μC/cm 2). It was found that, at high sweep fields, the contribution of the leakage current to the apparent values of remanent polarization can be large, even for the films with large electrical resistivity (˜10 8-10 9 Ω cm at an electric filed of 1 MV/cm). The measured dielectric constant ranges from 410 to 260 for Pb(Zr 0.33Ti 0.67)O 3 and from 313 to 213 for Pb(Zr 0.2Ti 0.8)O 3 in the frequency range from 100 to 1 MHz.

Morphology and grain structure evolution during epitaxial growth of Ag films on native-oxide-covered Si surface

International Nuclear Information System (INIS)

Hur, Tae-Bong; Kim, Hong Koo; Perello, David; Yun, Minhee; Kulovits, Andreas; Wiezorek, Joerg

2008-01-01

Epitaxial nanocrystalline Ag films were grown on initially native-oxide-covered Si(001) substrates using radio-frequency magnetron sputtering. Mechanisms of grain growth and morphology evolution were investigated. An epitaxially oriented Ag layer (∼5 nm thick) formed on the oxide-desorbed Si surface during the initial growth phase. After a period of growth instability, characterized as kinetic roughening, grain growth stagnation, and increase of step-edge density, a layer of nanocrystalline Ag grains with a uniform size distribution appeared on the quasi-two-dimensional layer. This hierarchical process of film formation is attributed to the dynamic interplay between incoming energetic Ag particles and native oxide. The cyclic interaction (desorption and migration) of the oxide with the growing Ag film is found to play a crucial role in the characteristic evolution of grain growth and morphology change involving an interval of grain growth stagnation

Semiconducting behavior of the anodically passive films formed on AZ31B alloy

Directory of Open Access Journals (Sweden)

A. Fattah-alhosseini

2014-12-01

Full Text Available This work includes determination of the semiconductor character and estimation of the dopant levels in the passive film formed on AZ31B alloy in 0.01 M NaOH, as well as the estimation of the passive film thickness as a function of the film formation potential. Mott–Schottky analysis revealed that the passive films displayed n-type semiconductive characteristics, where the oxygen vacancies and interstitials preponderated. Based on the Mott–Schottky analysis, it was shown that the calculated donor density increases linearly with increasing the formation potential. Also, the electrochemical impedance spectroscopy (EIS results indicated that the thickness of the passive film was decreased linearly with increasing the formation potential. The results showed that decreasing the formation potential offer better conditions for forming the passive films with higher protection behavior, due to the growth of a much thicker and less defective films.

Thin film solar cells from earth abundant materials growth and characterization of Cu2(ZnSn)(SSe)4 thin films and their solar cells

CERN Document Server

Kodigala, Subba Ramaiah

2013-01-01

The fundamental concept of the book is to explain how to make thin film solar cells from the abundant solar energy materials by low cost. The proper and optimized growth conditions are very essential while sandwiching thin films to make solar cell otherwise secondary phases play a role to undermine the working function of solar cells. The book illustrates growth and characterization of Cu2ZnSn(S1-xSex)4 thin film absorbers and their solar cells. The fabrication process of absorber layers by either vacuum or non-vacuum process is readily elaborated in the book, which helps for further developm

solution growth and characterization of copper oxide thin films ...

African Journals Online (AJOL)

Thin films of copper oxide (CuO) were grown on glass slides by using the solution growth technique. Copper cloride (CuCl ) and potassium telluride (K T O ) were used. Buffer 2 2e 3 solution was used as complexing agent. The solid state properties and optical properties were obtained from characterization done using PYE ...

Effects of local film properties on the nucleation and growth of tin whiskers and hillocks

Science.gov (United States)

Sarobol, Pylin

Whiskers and hillocks grow spontaneously on Pb-free Sn electrodeposited films as a response to thin film stresses. Stress relaxation occurs by atom deposition to specific grain boundaries in the plane of the film, with hillocks being formed when grain boundary migration accompanies growth out of the plane of the film. The implication for whisker formation in electronics is serious: whiskers can grow to be millimeters long, sometimes causing short circuiting between adjacent components and, thereby, posing serious electrical reliability risks. In order to develop more effective whisker mitigation strategies, a predictive physics-based model has been needed. A growth model is developed, based on grain boundary faceting, localized Coble creep, as well as grain boundary sliding for whiskers, and grain boundary sliding with shear induced grain boundary migration for hillocks. In this model of whisker formation, two mechanisms are important: accretion of atoms by Coble creep on grain boundary planes normal to the growth direction inducing a grain boundary shear and grain boundary sliding in the direction of whisker growth. The model accurately captures the importance of the geometry of "surface grains"---shallow grains on film surfaces whose depths are significantly less than their in-plane grain sizes. A critical factor in the analysis is the ratio of the grain boundary sliding coefficient to the in-plane film compressive stress. If the accretion-induced shear stresses are not coupled to grain boundary motion and sliding occurs, a whisker forms. If the shear stress is coupled to grain boundary migration, a hillock forms. Based on this model, long whiskers grow from shallow surface grains with easy grain boundary sliding in the direction of growth. Other observed growth morphologies will be discussed in light of our model. Additional insights into the preferred sites for whisker and hillock growth were developed based on elastic anisotropy, local film microstructure

Growth and magnetic structure of La{sub 0.67}Sr{sub 0.33}MnO{sub 3} films

Energy Technology Data Exchange (ETDEWEB)

Brown, G.W.; Jia, Q.X.; Peterson, E.J.; Hristova, D.K.; Hundley, M.F.; Thompson, J.D.; Maggiore, C.J.; Tesmer, J.; Hawley, M.E.

1997-08-01

Growth of LaMnO{sub 3} films that exhibit colossal magnetoresistance (CMR) has concentrated heavily on Ca doped materials. However, since the 33% Sr doped films are ferromagnetic at room temperature, they are ideal candidates for dual growth-magnetic structure studies using scanned probe techniques. In this study, interest was focused on the relations between growth/processing parameters, film morphology, and electronic/magnetic properties. In addition, films were grown on both LaAlO{sub 3} (LAO) and SrTiO{sub 3} (STO) to examine the results of stress induced by different substrate mismatches. La{sub 0.67}Sr{sub 0.33}MnO{sub 3} (LSMO) was grown using pulsed laser deposition (PLD) at temperatures between 500 C and 800 C. The film microstructure, crystallinity, and magnetic and electrical properties were characterized by room temperature scanning tunneling microscopy (STM), atomic force microscopy (AFM), magnetic force microscopy (MFM), x-ray diffraction, and temperature dependent transport and magnetization measurements. The growth trends follow those previously reported for Ca doped films. Grains increase in size with increasing temperature and coalesce into extended layers after annealing. Although topographic contributions complicate interpretation of some MFM data, local magnetic structure observed here is generally associated with film defects.

Non-vacuum growth of graphene films using solid carbon source

International Nuclear Information System (INIS)

Nguyen, Ba-Son; Lin, Jen-Fin; Perng, Dung-Ching

2015-01-01

This study demonstrates that air annealing can grow high-quality graphene films on the surface of polycrystalline nickel film with the help of an effective SiO 2 capping layer. The number of graphene layers can be modulated by the amount of carbon embedded in the Ni film before annealing. Raman analysis results, transmission electron microscopy images, and electron diffraction patterns of the samples confirm that graphene films can be grown in air with an oxygen blocking layer and a 10 °C/s cooling rate in an open-vented rapid thermal annealing chamber or an open tube furnace. The high-quality low-defect air-annealing grown graphene is comparable to commercially available graphene grown via chemical vapor deposition. The proposed graphene growth using air annealing technique is simple and low-cost, making it highly attractive for mass production. It is transfer-free to a silicon substrate and can speed up graphene development, opening up new applications

Solution growth of Tb doped Gd_2O_3 film

International Nuclear Information System (INIS)

Ghosh, M.; Pitale, S.; Desai, D.G.; Patra, G.D.; Sen, S.; Gadkari, S.C.

2016-01-01

Nanomaterials of Gd_2O_3 have proven applications in medical imaging and cancer therapy due to the presence of element Gd. Also Gd_2O_3 films have been grown by vapor phase method as well as self assembly in solution and studied as a high-k dielectric and efficient luminescence material. Here, we report a method to obtain Tb doped Gd_2O_3 film by solution growth method followed by suitable heat treatment. Uniform films of Tb doped Gadolinium hydroxycarbonate have been deposited on fused quartz substrates kept inside a solution containing gadolinium nitrate, terbium nitrate and Urea maintained at 90°C. Gadolinium hydroxy-carbonate films are then treated at 800°C for 2 hour to obtain Tb doped cubic Gd_2O_3 as confirmed by X-ray diffraction measurement. The photoluminescence spectra display characteristic Tb emission at 544 nm when excited at 285 nm. The lifetime of Tb emission is found to be of the order of few microseconds. (author)

Non-vacuum growth of graphene films using solid carbon source

Energy Technology Data Exchange (ETDEWEB)

Nguyen, Ba-Son [Department of Mechanical Engineering, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China); Faculty of Mechatronics – Electronics, Lac Hong University, 10 Huynh Van Nghe Road, Bienhoa (Viet Nam); Lin, Jen-Fin, E-mail: jflin@mail.ncku.edu.tw, E-mail: dcperng@ee.ncku.edu.tw [Department of Mechanical Engineering, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China); Center for Micro/Nano Science and Technology, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China); Perng, Dung-Ching, E-mail: jflin@mail.ncku.edu.tw, E-mail: dcperng@ee.ncku.edu.tw [Center for Micro/Nano Science and Technology, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China); Institute of Microelectronics and Electrical Engineering Department, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China)

2015-06-01

This study demonstrates that air annealing can grow high-quality graphene films on the surface of polycrystalline nickel film with the help of an effective SiO{sub 2} capping layer. The number of graphene layers can be modulated by the amount of carbon embedded in the Ni film before annealing. Raman analysis results, transmission electron microscopy images, and electron diffraction patterns of the samples confirm that graphene films can be grown in air with an oxygen blocking layer and a 10 °C/s cooling rate in an open-vented rapid thermal annealing chamber or an open tube furnace. The high-quality low-defect air-annealing grown graphene is comparable to commercially available graphene grown via chemical vapor deposition. The proposed graphene growth using air annealing technique is simple and low-cost, making it highly attractive for mass production. It is transfer-free to a silicon substrate and can speed up graphene development, opening up new applications.

Growth and characterization of tris(8-hydroxyquinoline)-aluminum molecular films

Energy Technology Data Exchange (ETDEWEB)

Jan, Da-Jeng; Wang, Sheng-Shin; Tang, Shiow-Jing; Lin, Ku-Yen; Yang, Jiun-Jie; Shen, Ji-Lin; Chiu, Kuan-Cheng, E-mail: kcchiu@cycu.edu.tw

2011-11-30

Various tris(8-hydroxyquinoline)-aluminum (Alq3) molecular solid films were grown on top of indium-tin-oxide (ITO) glass substrates using physical vapor deposition. The effect of changing the growth conditions on the properties of the films was studied. From scanning electron microscopy, an Alq3 planar layer over an ITO-substrate was observed at the initial period, and an Alq3 tubular structure (which becomes dominant at substrate temperature T{sub sub} Greater-Than-Over-Equal-To 90 Degree-Sign C) was found to nucleate from this layer. From X-ray diffraction, the Alq3 planar layer possesses an amorphous character while the Alq3 tubular layer has a triclinic {alpha}-phase structure. Based on an Arrhenius plot of the growth rate versus 1/T{sub sub}, the growth behaviors in various T{sub sub}-regions were discussed to be dominated by adhesion (for T{sub sub} < 90 Degree-Sign C), steric effect (90 Degree-Sign C < T{sub sub} < 150 Degree-Sign C), and re-evaporation (T{sub sub} > 150 Degree-Sign C). Then, from optical transmission and photoluminescence spectra performed on the high crystalline Alq3 films, two signals associated with the optical-bandgap E{sub g} absorption and the gap-state absorption were determined and discussed in terms of the optical properties of the constituent Alq3 molecules. Finally, from a fit of E{sub g}(T) by an effective electron-phonon interaction model, the physical significance of these fitting parameters for the Alq3 molecular solid was investigated.

Growth of fine holes in polyethylenenaphthalate film irradiated by fission fragments

International Nuclear Information System (INIS)

Komaki, Y.; Tsujimura, S.

1976-01-01

Growth of fine holes by chemical etching in polyethylenenaphthalate films exposed to fission fragments were examined by measuring gas flow through the films. The etching rate along tracks, the radial etching rate, and the bulk etching rate were determined at effective hole diameters of 100 to 1000 A and hole densities of approximately 10 8 cm -2 . The effects of ethanol and surfactants on the etching rates were studied from the viewpoint of attaining less-tapered holes

Crystalline silicon thin film growth by ECR plasma CVD for solar cells

International Nuclear Information System (INIS)

Licai Wang

1999-07-01

This thesis describes the background, motivation and work carried out towards this PhD programme entitled 'Crystalline Silicon Thin Film Growth by ECR Plasma CVD for Solar Cells'. The fundamental principles of silicon solar cells are introduced with a review of silicon thin film and bulk solar cells. The development and prospects for thin film silicon solar cells are described. Some results of a modelling study on thin film single crystalline solar cells are given which has been carried out using a commercially available solar cell simulation package (PC-1D). This is followed by a description of thin film deposition techniques. These include Chemical Vapour Deposition (CVD) and Plasma-Assisted CVD (PACVD). The basic theory and technology of the emerging technique of Electron Cyclotron Resonance (ECR) PACVD, which was used in this research, are introduced and the potential advantages summarised. Some of the basic methods of material and cell characterisation are briefly described, together with the work carried out in this research. The growth by ECR PACVD at temperatures 2 illumination. The best efficiency in the ECR grown structures was 13.76% using an epitaxial emitter. Cell performance was analysed in detail and the factors controlling performance identified by fitting self-consistently the fight and dark current-voltage and spectral response data using PC-1D. Finally, the conclusions for this research and suggestions for further work are outlined. (author)

Modelling subject-specific childhood growth using linear mixed-effect models with cubic regression splines.

Science.gov (United States)

Grajeda, Laura M; Ivanescu, Andrada; Saito, Mayuko; Crainiceanu, Ciprian; Jaganath, Devan; Gilman, Robert H; Crabtree, Jean E; Kelleher, Dermott; Cabrera, Lilia; Cama, Vitaliano; Checkley, William

2016-01-01

Childhood growth is a cornerstone of pediatric research. Statistical models need to consider individual trajectories to adequately describe growth outcomes. Specifically, well-defined longitudinal models are essential to characterize both population and subject-specific growth. Linear mixed-effect models with cubic regression splines can account for the nonlinearity of growth curves and provide reasonable estimators of population and subject-specific growth, velocity and acceleration. We provide a stepwise approach that builds from simple to complex models, and account for the intrinsic complexity of the data. We start with standard cubic splines regression models and build up to a model that includes subject-specific random intercepts and slopes and residual autocorrelation. We then compared cubic regression splines vis-à-vis linear piecewise splines, and with varying number of knots and positions. Statistical code is provided to ensure reproducibility and improve dissemination of methods. Models are applied to longitudinal height measurements in a cohort of 215 Peruvian children followed from birth until their fourth year of life. Unexplained variability, as measured by the variance of the regression model, was reduced from 7.34 when using ordinary least squares to 0.81 (p linear mixed-effect models with random slopes and a first order continuous autoregressive error term. There was substantial heterogeneity in both the intercept (p modeled with a first order continuous autoregressive error term as evidenced by the variogram of the residuals and by a lack of association among residuals. The final model provides a parametric linear regression equation for both estimation and prediction of population- and individual-level growth in height. We show that cubic regression splines are superior to linear regression splines for the case of a small number of knots in both estimation and prediction with the full linear mixed effect model (AIC 19,352 vs. 19

Effect of milk proteins on linear growth and IGF variables in overweight adolescents

DEFF Research Database (Denmark)

Larnkjær, Anni; Arnberg, Karina; Michaelsen, Kim F

2014-01-01

Milk may stimulate growth acting via insulin-like growth factor-I (IGF-I) secretion but the effect in adolescents is less examined. This study investigates the effect of milk proteins on linear growth, IGF-I, IGF binding protein-3 (IGFBP-3) and IGF-I/IGFBP-3 ratio in overweight adolescents....

Growth and surface characterization of sputter-deposited molybdenum oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Ramana, C.V. [Nanoscience and Surface Chemistry Laboratory, Department of Geological Sciences, University of Michigan, Ann Arbor, MI 48109 (United States)]. E-mail: ramanacv@umich.edu; Atuchin, V.V. [Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090 (Russian Federation); Kesler, V.G. [Technical Centre, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090 (Russian Federation); Kochubey, V.A. [Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090 (Russian Federation); Pokrovsky, L.D. [Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090 (Russian Federation); Shutthanandan, V. [Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, WA 99352 (United States); Becker, U. [Nanoscience and Surface Chemistry Laboratory, Department of Geological Sciences, University of Michigan, Ann Arbor, MI 48109 (United States); Ewing, R.C. [Nanoscience and Surface Chemistry Laboratory, Department of Geological Sciences, University of Michigan, Ann Arbor, MI 48109 (United States)

2007-04-15

Molybdenum oxide thin films were produced by magnetron sputtering using a molybdenum (Mo) target. The sputtering was performed in a reactive atmosphere of an argon-oxygen gas mixture under varying conditions of substrate temperature (T {sub s}) and oxygen partial pressure (pO{sub 2}). The effect of T {sub s} and pO{sub 2} on the growth and microstructure of molybdenum oxide films was examined in detail using reflection high-energy electron diffraction (RHEED), Rutherford backscattering spectrometry (RBS), energy-dispersive X-ray spectrometry (EDS), X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy (SEM) measurements. The analyses indicate that the effect of T {sub s} and pO{sub 2} on the microstructure and phase of the grown molybdenum oxide thin films is remarkable. RHEED and RBS results indicate that the films grown at 445 deg. C under 62.3% O{sub 2} pressure were stoichiometric and polycrystalline MoO{sub 3}. Films grown at lower pO{sub 2} were non-stoichiometric MoO {sub x} films with the presence of secondary phase. The microstructure of the grown Mo oxide films is discussed and conditions were optimized to produce phase pure, stoichiometric, and highly textured polycrystalline MoO{sub 3} films.

Laterally enhanced growth of electrodeposited Au to form ultrathin films on nonconductive surfaces

International Nuclear Information System (INIS)

Kobayashi, Chiaki; Saito, Mikiko; Homma, Takayuki

2012-01-01

We investigated the laterally enhanced growth of electrodeposited Au for fabricating nanogap electrodes. To enhance the lateral growth, we carried out electrodeposition over patterned electrodes onto a SiO 2 surface modified with self-assembled monolayers (SAMs) or dendrimers with amine groups. The morphology and thickness of the Au films were controlled by adjusting deposition conditions such as duration, applied potential, and Au ion concentration in the bath. To investigate the mechanism of the laterally enhanced growth, the surface states of SAM- or dendrimer-modified SiO 2 were analyzed by X-ray photoelectron spectroscopy (XPS). The XPS results indicate the existence of organic molecules and Au ions on the SiO 2 surface, which suggests that laterally enhanced growth is induced by the Au ions coordinated on the amine groups of the organic molecules. To further analyze the mechanism of the laterally enhanced growth, we investigated the relationship between the morphology of the laterally enhanced growth of Au and the amount of Au ions on organic molecules. The laterally enhanced growth of Au is expected to be useful for fabricating thin film nanogap electrodes.

Linear and nonlinear optical properties of Sb-doped GeSe2 thin films

Science.gov (United States)

Zhang, Zhen-Ying; Chen, Fen; Lu, Shun-Bin; Wang, Yong-Hui; Shen, Xiang; Dai, Shi-Xun; Nie, Qiu-Hua

2015-06-01

Sb-doped GeSe2 chalcogenide thin films are prepared by the magnetron co-sputtering method. The linear optical properties of as-deposited films are derived by analyzing transmission spectra. The refractive index rises and the optical band gap decreases from 2.08 eV to 1.41 eV with increasing the Sb content. X-ray photoelectron spectra further confirm the formation of a covalent Sb-Se bond. The third-order nonlinear optical properties of thin films are investigated under femtosecond laser excitation at 800 nm. The results show that the third-order nonlinear optical properties are enhanced with increasing the concentration of Sb. The nonlinear refraction indices of these thin films are measured to be on the order of 10-18 m2/W with a positive sign and the nonlinear absorption coefficients are obtained to be on the order of 10-10 m/W. These excellent properties indicate that Sb-doped Ge-Se films have a good prospect in the applications of nonlinear optical devices. Project supported by the National Key Basic Research Program of China (Grant No. 2012CB722703), the National Natural Science Foundation of China (Grant No. 61377061), the Young Leaders of Academic Climbing Project of the Education Department of Zhejiang Province, China (Grant No. pd2013092), the Program for Innovative Research Team of Ningbo City, China (Grant No. 2009B217), and the K. C. Wong Magna Fund in Ningbo University, China.

Stabilisation of late transition metal and noble metal films in hexagonal and body centred tetragonal phases by epitaxial growth

Energy Technology Data Exchange (ETDEWEB)

Hueger, E.

2005-08-26

In this work ultrathin metallic films with a crystal phase different to their natural bulk structure were produced by hetero-epitaxial growth on metallic substrates. A further aim of this work was to understand the initiation, growth and stability of crystal phase modifications of these films. there exist cases where the films turn beyond the pseudomorphic-growth to a crystal phase different from their natural bulk structure. The present work presents and discusses such a case in addition to the general phenomenon of pseudomorphic-growth. In particular it is shown that metals whose natural phase is face centred cubic (fcc) can be grown in body centred tetragonal (bct) or hexagonal close packed (hcp) phases in the form of thin films on (001) surfaces of appropriate substrates. The growth behavior, electron diffraction analysis, appearance conditions, geometric fit considerations, examples and a discussion of the phase stability of non-covered films and superlattices is given reviewing all epitaxial-systems whose diffraction pattern can be explained by the hexagonal or pseudomorphic bct phase. (orig.)

Controllable growth and characterization of highly aligned ZnO nanocolumnar thin films

Energy Technology Data Exchange (ETDEWEB)

Onuk, Zuhal [Department of Physics, Recep Tayyip Erdogan University, Rize, 53100 (Turkey); Department of Materials Science and Engineering, University of Delaware, Newark, DE, 19716 (United States); Rujisamphan, Nopporn [Nanoscience and Nanotechnology Graduate Program, Faculty of Science, King Mongkut’s University of Technology Thonburi, 10140, Bangkok (Thailand); Theoretical and Computational Science Center (TaCS), Faculty of Science, King Mongkut’s University of Technology Thonburi, Bangkok 10140 (Thailand); Murray, Roy [Department of Physics and Astronomy, University of Delaware, Newark, DE, 19716 (United States); Bah, Mohamed [Department of Materials Science and Engineering, University of Delaware, Newark, DE, 19716 (United States); Tomakin, Murat [Department of Physics, Recep Tayyip Erdogan University, Rize, 53100 (Turkey); Shah, S.Ismat, E-mail: ismat@udel.edu [Department of Materials Science and Engineering, University of Delaware, Newark, DE, 19716 (United States); Department of Physics and Astronomy, University of Delaware, Newark, DE, 19716 (United States)

2017-02-28

Graphical abstract: Scanning electron micrographs of the top view surfaces (left column) and cross sections of sputtered ZnO thin films prepared at various Ar:O{sub 2} ratios: (a) and (b) 10:0, (c) and (d) 7.5:2.5, (e) and (f) 5:5, (g) and (h) 2.5:7.5. - Highlights: • Nanocolumnar ZnO films were prepared by controlling the argon-oxygen sputtering gas ratio. • Oxygen partial pressure affects the band gap alignment of the ZnO films. • Optical transmission spectroscopy and XPS were used to study band gap shifts. - Abstract: We investigated the effects of growth conditions during magnetron sputtering on the structural, morphological, and optical properties of nanostructured ZnO thin films. Undoped ZnO thin films are deposited onto p-type Si (100) and corning 7059 glass substrates by RF magnetron sputtering using a ZnO target in combination with various Ar-O{sub 2} sputtering gas mixtures at room temperature. The effect of the partial pressure of oxygen on the morphology of ZnO thin film structure and band alignment were investigated. Thickness, and therefore the growth rate of the samples measured from the cross-sectional SEM micrographs, is found to be strongly correlated with the oxygen partial pressure in the sputtering chamber. The optical transmittance spectrometry results show that the absorption edge shifts towards the longer wavelength at higher oxygen partial pressure. X-ray photoelectron spectroscopy (XPS) used for determining the surface chemical structure and valence band offsets show that conduction band can be controlled by changing the sputtering atmosphere.

Underpotential deposition-mediated layer-by-layer growth of thin films

Science.gov (United States)

Wang, Jia Xu; Adzic, Radoslav R.

2015-05-19

A method of depositing contiguous, conformal submonolayer-to-multilayer thin films with atomic-level control is described. The process involves the use of underpotential deposition of a first element to mediate the growth of a second material by overpotential deposition. Deposition occurs between a potential positive to the bulk deposition potential for the mediating element where a full monolayer of mediating element forms, and a potential which is less than, or only slightly greater than, the bulk deposition potential of the material to be deposited. By cycling the applied voltage between the bulk deposition potential for the mediating element and the material to be deposited, repeated desorption/adsorption of the mediating element during each potential cycle can be used to precisely control film growth on a layer-by-layer basis. This process is especially suitable for the formation of a catalytically active layer on core-shell particles for use in energy conversion devices such as fuel cells.

Mechanistic Insights into Growth of Surface-Mounted Metal-Organic Framework Films Resolved by Infrared (Nano-) Spectroscopy

NARCIS (Netherlands)

Delen, Guusje; Ristanovic, Zoran; Mandemaker, Laurens D. B.; Weckhuysen, Bert M.

2018-01-01

Control over assembly, orientation, and defect-free growth of metal-organic framework (MOF) films is crucial for their future applications. A layer-by-layer approach is considered a suitable method to synthesize highly oriented films of numerous MOF topologies, but the initial stages of the film

Growth process and structure of Er/Si(100) thin film

International Nuclear Information System (INIS)

Fujii, S.; Michishita, Y.; Miyamae, N.; Suto, H.; Honda, S.; Okado, H.; Oura, K.; Katayama, M.

2006-01-01

The solid-phase reactive epitaxial growth processes and structures of Er/Si(100) thin films were investigated by coaxial impact-collision ion scattering spectroscopy (CAICISS), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The as-deposited Er film grown at room temperature was transformed into crystalline rectangular-shaped islands after annealing at 900 deg. C. These islands have a hexagonal AlB 2 -type structure and the epitaxial relationship is determined to be ErSi 2 (011-bar0)[0001]//Si(100)[011-bar]. It has been revealed that the surface of the Er silicide island is terminated with an Er plane

Surface morphology study on chromium oxide growth on Cr films by Nd-YAG laser oxidation process

International Nuclear Information System (INIS)

Dong Qizhi; Hu Jiandong; Guo Zuoxing; Lian Jianshe; Chen Jiwei; Chen Bo

2002-01-01

Grain sized (60-100 nm) Cr 2 O 3 thin films were prepared on Cr thin film surfaces by Nd-YAG laser photothermal oxidation process. Surface morphology study showed crack-free short plateau-like oxide films formed. Increase of dislocation density after pulsed laser irradiation was found. Thin film external surfaces, grain boundaries and dislocations are main paths of laser surface oxidation. Pinning and sealing of grain boundary was the reason that deeper oxidation did not produce. Grain growth and agglomeration of Cr sub-layer yielded tensile stress on the surface Cr 2 O 3 thin film. It was the reason that short plateau-like surface morphology formed and cracks appeared sometimes. In oxygen annealing at 700 deg. C, grain boundaries were considered not to be pinned at the surface, mixture diffusion was main mechanism in growth of oxide. Compression stress development in whole film led to extrusion of grains that was the reason that multiple appearances such as pyramid-like and nutshell-like morphology formed

Organic semiconductor growth and morphology considerations for organic thin-film transistors.

Science.gov (United States)

Virkar, Ajay A; Mannsfeld, Stefan; Bao, Zhenan; Stingelin, Natalie

2010-09-08

Analogous to conventional inorganic semiconductors, the performance of organic semiconductors is directly related to their molecular packing, crystallinity, growth mode, and purity. In order to achieve the best possible performance, it is critical to understand how organic semiconductors nucleate and grow. Clever use of surface and dielectric modification chemistry can allow one to control the growth and morphology, which greatly influence the electrical properties of the organic transistor. In this Review, the nucleation and growth of organic semiconductors on dielectric surfaces is addressed. The first part of the Review concentrates on small-molecule organic semiconductors. The role of deposition conditions on film formation is described. The modification of the dielectric interface using polymers or self-assembled mono-layers and their effect on organic-semiconductor growth and performance is also discussed. The goal of this Review is primarily to discuss the thin-film formation of organic semiconducting species. The patterning of single crystals is discussed, while their nucleation and growth has been described elsewhere (see the Review by Liu et. al).([¹]) The second part of the Review focuses on polymeric semiconductors. The dependence of physico-chemical properties, such as chain length (i.e., molecular weight) of the constituting macromolecule, and the influence of small molecular species on, e.g., melting temperature, as well as routes to induce order in such macromolecules, are described.

Linearly and circularly polarized laser photoinduced molecular order in azo dye doped polymer films

Directory of Open Access Journals (Sweden)

Saad Bendaoud

2017-01-01

Full Text Available Photo-induced behavior of Azo Disperse one (AZD1 doped Poly(Methyl MethAcrylate (PMMA using both linear and circular polarized light is studied. The anisotropy is not erased by the circular polarization light. The circular polarization light combined with relatively long lifetime of the cis state in azo dye doped polymers activate all transverse directions of the angular hole burning through the spot in the film inducing anisotropy. Under circular polarized light, there is no orientation perpendicularly to the helex described by the rotating electric field vector, trans molecules reorients in the propagation direction of the pump beam. The polarization state of the probe beam after propagation through the pumped spot depends strongly on the angle of incidence of both pump and probe beams on the input face. In the case where circular polarized pump and probe beams are under the same angle of incidence, the probe beam “sees” anisotropic film as if it is isotropic. Results of this work shows the possibility to reorient azobenzene-type molecules in two orthogonal directions using alternately linearly and circularly polarized beams.

Substrate structure dependence of the growth modes of p-quaterphenyl thin films on gold

International Nuclear Information System (INIS)

Muellegger, S.; Mitsche, S.; Poelt, P.; Haenel, K.; Birkner, A.; Woell, C.; Winkler, A.

2005-01-01

The variably oriented crystallite surfaces of a recrystallized polycrystalline gold sample served as substrates for the investigation of the structure dependence of p-quaterphenyl (4P) thin film growth. The films were prepared in ultrahigh vacuum by organic molecular beam evaporation. Optical microscopy, scanning electron microscopy, combined with laterally resolved electron backscatter diffraction and scanning tunnelling microscopy have been applied to determine the correlation between the substrate surface structure and 4P film morphology. Crystallite surfaces consisting of (110) terraces favour highly anisotropic needle-like 4P growth with the needle orientation normal to the Au directions. Atomic steps on vicinal planes with narrow terraces (< 2 nm) can also induce anisotropy in the 4P thin film growth, in particular elongated 4P islands normal to the step direction. In contrast to that, a nearly isotropic distribution of the needle orientations is observed on Au grains terminated by highly symmetric (111) or (100) crystal planes. Additionally, patches of continuous 4P layers can be found on these surfaces. There is strong evidence that the 4P molecules within the needle-like crystallites are oriented parallel to the Au surface, whereas for the continuous layers the 4P molecules are oriented nearly upright on the surface

Effect of growth interruptions on TiO{sub 2} films deposited by plasma enhanced chemical vapour deposition

Energy Technology Data Exchange (ETDEWEB)

Li, D., E-mail: dyli@yzu.edu.cn [College of Mechanical Engineering, Yangzhou University, Yangzhou, 225127 (China); Goullet, A. [Institut des Matériaux Jean Rouxel (IMN), UMR CNRS 6502, 2 rue de la Houssinière, 44322, Nantes (France); Carette, M. [Institut d’Electronique, de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, Avenue Poincaré, 59652, Villeneuve d' Ascq (France); Granier, A. [Institut des Matériaux Jean Rouxel (IMN), UMR CNRS 6502, 2 rue de la Houssinière, 44322, Nantes (France); Landesman, J.P. [Institut de Physique de Rennes, UMR CNRS 6251, 263 av. Général Leclerc, 35042, Rennes (France)

2016-10-01

TiO{sub 2} films of ∼300 nm were deposited at low temperature (<140 °C) and pressure (0.4 Pa) using plasma enhanced chemical vapour deposition at the floating potential (V{sub f}) or the substrate self-bias voltage (V{sub b}) of −50 V. The impact of growth interruptions on the morphology, microstructure and optical properties of the films was investigated. The interruptions were carried out by stopping the plasma generation and gas injection once the increase of the layer thickness during each deposition step was about ∼100 nm. In one case of V{sub f}, the films of ∼300 nm exhibit a columnar morphology consisting of a bottom dense layer, an intermediate gradient layer and a top roughness layer. But the growth interruptions result in an increase of the dense layer thickness and a decrease of surface roughness. The film inhomogeneity has been identified by the in-situ real-time evolution of the kinetic ellipsometry (KE) parameters and the modeling process of spectroscopic ellipsometry (SE). The discrepancy of the refractive index measured by SE between bottom and upper layers can be reduced by growth interruptions. In the other case of V{sub b} = −50 V, the films exhibit a more compact arrangement which is homogeneous along the growth direction as confirmed by KE and SE. Both of Fourier transform infrared spectra and X-ray diffraction illustrate a phase transformation from anatase to rutile with the bias of −50 V, and also evidenced on the evolution of the refractive index dispersion curves. And a greatly increase of the refractive indice in the transparent range can be identified. However, the growth interruptions seem to have no influence on the morphology and optical properties in this case. - Highlights: • TiO{sub 2} films deposited by plasma processes at low temperature and pressure. • Influence of growth interruptions on structural and optical properties. • In-situ real-time ellipsometry measurements on film properties. • Structural and

Disilane chemisorption on Si(x)Ge(1-x)(100)-(2 x 1): molecular mechanisms and implications for film growth rates.

Science.gov (United States)

Ng, Rachel Qiao-Ming; Tok, E S; Kang, H Chuan

2009-07-28

At low temperatures, hydrogen desorption is known to be the rate-limiting process in silicon germanium film growth via chemical vapor deposition. Since surface germanium lowers the hydrogen desorption barrier, Si(x)Ge((1-x)) film growth rate increases with the surface germanium fraction. At high temperatures, however, the molecular mechanisms determining the epitaxial growth rate are not well established despite much experimental work. We investigate these mechanisms in the context of disilane adsorption because disilane is an important precursor used in film growth. In particular, we want to understand the molecular steps that lead, in the high temperature regime, to a decrease in growth rate as the surface germanium increases. In addition, there is a need to consider the issue of whether disilane adsorbs via silicon-silicon bond dissociation or via silicon-hydrogen bond dissociation. It is usually assumed that disilane adsorption occurs via silicon-silicon bond dissociation, but in recent work we provided theoretical evidence that silicon-hydrogen bond dissociation is more important. In order to address these issues, we calculate the chemisorption barriers for disilane on silicon germanium using first-principles density functional theory methods. We use the calculated barriers to estimate film growth rates that are then critically compared to the experimental data. This enables us to establish a connection between the dependence of the film growth rate on the surface germanium content and the kinetics of the initial adsorption step. We show that the generally accepted mechanism where disilane chemisorbs via silicon-silicon bond dissociation is not consistent with the data for film growth kinetics. Silicon-hydrogen bond dissociation paths have to be included in order to give good agreement with the experimental data for high temperature film growth rate.

Solution growth, characterization and applications of zinc sulphide thin films

Energy Technology Data Exchange (ETDEWEB)

Ndukwe, I C [School of Physical Sciences, Abia State University, Uturu, Abia State (Nigeria)

1996-04-29

Zinc sulphide (ZnS) thin films were successfully deposited on glass substrates under varying deposition conditions using the electroless or solution growth technique. The film properties investigated include their transmittance/reflectance/absorbance spectra, bandgap, optical constants, and thicknesses. Films grown under certain parametric conditions were found to exhibit high transmittance (64-98%), low absorbance, and low reflectance in the ultraviolet (uv)/visible/near infrared (nir) regions up to 1.00 {mu}m. Those obtained under other conditions exhibited high transmittance (78-98%) and low absorbance (0.01-0.1) in the uv/visible regions but low transmittance (30-37) and high absorbance (0.56) in the nir region. These characteristics revealed their suitability for various solar device applications. Bandgap range E{sub g}=3.7-3.8 eV and thickness range t=0.07 - 0.73 {mu}m were obtained.

Model for predicting non-linear crack growth considering load sequence effects (LOSEQ)

International Nuclear Information System (INIS)

Fuehring, H.

1982-01-01

A new analytical model for predicting non-linear crack growth is presented which takes into account the retardation as well as the acceleration effects due to irregular loading. It considers not only the maximum peak of a load sequence to effect crack growth but also all other loads of the history according to a generalised memory criterion. Comparisons between crack growth predicted by using the LOSEQ-programme and experimentally observed data are presented. (orig.) [de

The growth of sodium rough films on mica (0001) as determined by Helium Atom Scattering

DEFF Research Database (Denmark)

Gerlach, Rolf; Balzer, Frank; Rubahn, Horst-Günter

2001-01-01

, which is addressed to Na atoms that fill cleavage-induced holes in the mica surface. It provides a convenient means of calibrating the coverage of the surface. With increasing surface coverage Na clusters are formed on the mica surface. A broad angular distribution of the scattered Helium intensity......Elastic helium atom scattering (HAS) and linear optical extinction measurements are used to investigate the growth of sodium (Na) films on mica substrates in the surface temperature range between 90 and 300 K. At half a monolayer (ML) surface coverage we observe a maximum of scattered He intensity...... is observed with a coverage-independent angular width above eight monolayers coverage. From simultaneous optical extinction measurements we deduce that the clusters are oblate with a ratio of semiaxes perpendicular and parallel to the surface plane between 0.23 and 0.165....

Heteroepitaxial silicon film growth at 600 oC from an Al-Si eutectic melt

International Nuclear Information System (INIS)

Chaudhari, P.; Shim, Heejae; Wacaser, Brent A.; Reuter, Mark C.; Murray, Conal; Reuter, Kathleen B.; Jordan-Sweet, Jean; Ross, Frances M.; Guha, Supratik

2010-01-01

A method for growing heteroepitaxial Si films on sapphire was developed using a 6 nm thin Al layer at substrate temperature of 600 o C. Subsequently, the growth of Si nanowires was demonstrated on these films at 490 o C without breaking vacuum. We characterized the properties of the Si films by Raman scattering, X-ray diffraction and transmission electron microscopy and show that the crystal quality and dopant control are promising for photovoltaic applications.

Evaporation temperature-tuned physical vapor deposition growth engineering of one-dimensional non-Fermi liquid tetrathiofulvalene tetracyanoquinodimethane thin films

DEFF Research Database (Denmark)

Sarkar, I.; Laux, M.; Demokritova, J.

2010-01-01

We describe the growth of high quality tetrathiofulvalene tetracyanoquinodimethane (TTF-TCNQ) organic charge-transfer thin films which show a clear non-Fermi liquid behavior. Temperature dependent angle resolved photoemission spectroscopy and electronic structure calculations show that the growth...... of TTF-TCNQ films is accompanied by the unfavorable presence of neutral TTF and TCNQ molecules. The quality of the films can be controlled by tuning the evaporation temperature of the precursor in physical vapor deposition method....

Epitaxial growth of manganese oxide films on MgAl2O4 (001) substrates and the possible mechanism

Science.gov (United States)

Ren, Lizhu; Wu, Shuxiang; Zhou, Wenqi; Li, Shuwei

2014-03-01

Three types of manganese oxide films were grown on MgAl2O4 (001) substrates by plasma-assisted molecular beam epitaxy (PA-MBE) under different growth rates and substrate temperatures. The structural characteristics and chemical compositions of the films were investigated by using in-situ reflection high-energy electron diffraction (RHEED), ex-situ X-ray diffraction, Raman, and X-ray photoelectron spectra (XPS). At a lower substrate temperature (730 K), the epitaxial film tends to form mixed phases with a coexistence of Mn3O4 and Mn5O8 in order to relieve the mismatch-strain. However, at a higher substrate temperature (750 K), all of the films crystallize into Mn3O4; the critical thickness of the film grown under a lower growth rate (7 Å/min) is much larger than that under a high growth rate (10 Å/min). When the film reaches a certain critical thickness, the surface will become fairly rough, and another oriented phase Mn3O4 would crystallize on such a surface.

Linear ubiquitin chain induces apoptosis and inhibits tumor growth.

Science.gov (United States)

Qin, Zhoushuai; Jiang, Wandong; Wang, Guifen; Sun, Ying; Xiao, Wei

2018-01-01

Ubiquitination of proliferating cell nuclear antigen (PCNA) plays an important role in DNA damage response. Ectopic expression of PCNA fused at either terminus with ubiquitin (Ub) lacking two C-terminal glycine residues induces translesion DNA synthesis which resembles synthesis mediated by PCNA monoubiquitination. PCNA fused with Ub containing the C-terminal Gly residues at the C-terminus can be further polyubiquitinated in a Gly-dependent manner, which inhibits cell proliferation and induces ATR-dependent replication checkpoint. In this study, we surprisingly found that PCNA fused to a head-to-tail linear Ub chain induces apoptosis in a Ub chain length-dependent manner. Further investigation revealed that the apoptotic effect is actually induced by the linear Ub chain independently from PCNA, as the Ub chain fused to GFP or an epitope tag still efficiently induces apoptosis. It is revealed that the artificial linear Ub chain differs from endogenously encoded linear Ub chains in that its Ubs contain a Ub-G76S substitution, making the Ub chain resistant to cleavage by deubiquitination enzymes. We demonstrated in this study that ectopic expression of the artificial Ub chain alone in cultured human cancer cells is sufficient to inhibit tumor growth in a xenograft mouse model, making the linear Ub chain a putative anti-cancer agent.

Influence of stress on morphology and magnetism of heteroepitaxial thin films

International Nuclear Information System (INIS)

Wedler, G.

2001-01-01

In this thesis the method of the bending-beam technique and the scanning tunnel microscopy was used in order to study the influence of mechanical stresses on growth and magnetoelastic coupling of selected epitaxial thin-layer systems. The Si x Ge 1-x alloy films deposited at 900 K on Si(001) substrates with Si concentrations 20% a change of the stress-behaviour is observed, which lets conclude to pure 3D island growth without wetting layer. Scanning-tunnel-microscopy studies show already at intermediate film thicknesses of 1 nm regular islands with a narrow size distribution. For the explanation of this surprising change of the growth modus the influence of kinetic parameters is discussed. Furthermore for the first time stress measurements of Fe/ GaAs(001) are presented. The behaviour of the film stress at 450 K hints to a few nm thick interdiffusion layer between film and substrate. This interdiffusion is at 300 K only by about 30% reduced and cannot by this be neglected anywhere. By means of on different substrates [Mg(001), lowly stressed Cr(001) buffer layer, GaAs(001)] growed Fe films for the first time a detailed picture of the stress dependence of the magnetoelastic coupling constants B 1 and B 2 of Fe in the layer-density range of 2-100 mm is presented. While the coupling constants of stress-free Fe(001) films exhibit volume behaviour, distinct deviations occur already at small stresses of about 0.1 GPa; at some GPa even the sign changes. The value of B 2 decreases linearly with the film stress up to 6 GPa, in B 1 after an initially linear slope above 2-3 GPa a saturation occurs. Magnetization and magnetic anisotropy however behave in whole studied layer-density range as in the volume

Structural, linear and nonlinear optical properties of co-doped ZnO thin films

Science.gov (United States)

Shaaban, E. R.; El-Hagary, M.; Moustafa, El Sayed; Hassan, H. Shokry; Ismail, Yasser A. M.; Emam-Ismail, M.; Ali, A. S.

2016-01-01

Different compositions of Co-doped zinc oxide [(Zn(1- x)Co x O) ( x = 0, 0.02, 0.04, 0.06, 0.08 and 0.10)] thin films were evaporated onto highly clean glass substrates by thermal evaporation technique using a modified source. The structural properties investigated by X-ray diffraction revealed hexagonal wurtzite ZnO-type structure. The crystallite size of the films was found to decrease with increasing Co content. The optical characterization of the films has been carried out using spectral transmittance and reflectance obtained in the wavelength range from 300 to 2500 nm. The refractive index has been found to increase with increasing Co content. It was further found that optical energy gap decreases from 3.28 to 3.03 eV with increasing Co content from x = 0 to x = 0.10, respectively. The dispersion of refractive index has been analyzed in terms of Wemple-DiDomenico (WDD) single-oscillator model. The oscillator parameters, the single-oscillator energy ( E o), the dispersion energy ( E d), and the static refractive index ( n 0), were determined. The nonlinear refractive index of the Zn(1- x)Co x O thin films was calculated and revealed well correlation with the linear refractive index and WDD parameters which in turn depend on the density and molar volume of the system.

Pulsed laser thin film growth of di-octyl substituted polyfluorene and its co-polymers

Energy Technology Data Exchange (ETDEWEB)

Gupta, R.K.; Ghosh, K.; Kahol, P.K. [Department of Physics, Astronomy and Materials Science, Missouri State University, Springfield, MO 65897 (United States); Yoon, J. [Department of Physics and Astronomy, University of Missouri, Columbia, MO 65211 (United States); Guha, S. [Department of Physics and Astronomy, University of Missouri, Columbia, MO 65211 (United States)], E-mail: guhas@missouri.edu

2008-08-30

Matrix-assisted pulsed laser deposition (PLD) allows a controlled layer-by-layer growth of polymer films. Di-octyl substituted polyfluorene (PF8) and its copolymers were deposited as thin films using matrix-assisted PLD by employing a KrF excimer laser with a fluence of 125 mJ/pulses. The optical and structural properties of these films are compared with spincoated films via Raman spectroscopy, absorption and photoluminescence. The Raman spectra of both PLD and spincoated films are similar indicating that the polymer films deposited via PLD maintain their molecular structure. Both the spincoated and the PLD grown PF8 films that were cast from toluene show the presence of the {beta} phase. Benzothiadiazole substituted PF8 (F8BT) and butyl phenyl-substituted PF8 (PFB) PLD grown films show a slightly broader emission compared to the spincoated films, which is attributed to an enhanced intermolecular interaction in the PLD grown thin films.

Pulsed laser thin film growth of di-octyl substituted polyfluorene and its co-polymers

International Nuclear Information System (INIS)

Gupta, R.K.; Ghosh, K.; Kahol, P.K.; Yoon, J.; Guha, S.

2008-01-01

Matrix-assisted pulsed laser deposition (PLD) allows a controlled layer-by-layer growth of polymer films. Di-octyl substituted polyfluorene (PF8) and its copolymers were deposited as thin films using matrix-assisted PLD by employing a KrF excimer laser with a fluence of 125 mJ/pulses. The optical and structural properties of these films are compared with spincoated films via Raman spectroscopy, absorption and photoluminescence. The Raman spectra of both PLD and spincoated films are similar indicating that the polymer films deposited via PLD maintain their molecular structure. Both the spincoated and the PLD grown PF8 films that were cast from toluene show the presence of the β phase. Benzothiadiazole substituted PF8 (F8BT) and butyl phenyl-substituted PF8 (PFB) PLD grown films show a slightly broader emission compared to the spincoated films, which is attributed to an enhanced intermolecular interaction in the PLD grown thin films

Pulsed laser thin film growth of di-octyl substituted polyfluorene and its co-polymers

Science.gov (United States)

Gupta, R. K.; Ghosh, K.; Kahol, P. K.; Yoon, J.; Guha, S.

2008-08-01

Matrix-assisted pulsed laser deposition (PLD) allows a controlled layer-by-layer growth of polymer films. Di-octyl substituted polyfluorene (PF8) and its copolymers were deposited as thin films using matrix-assisted PLD by employing a KrF excimer laser with a fluence of 125 mJ/pulses. The optical and structural properties of these films are compared with spincoated films via Raman spectroscopy, absorption and photoluminescence. The Raman spectra of both PLD and spincoated films are similar indicating that the polymer films deposited via PLD maintain their molecular structure. Both the spincoated and the PLD grown PF8 films that were cast from toluene show the presence of the β phase. Benzothiadiazole substituted PF8 (F8BT) and butyl phenyl-substituted PF8 (PFB) PLD grown films show a slightly broader emission compared to the spincoated films, which is attributed to an enhanced intermolecular interaction in the PLD grown thin films.

Non-compliance with growth hormone treatment in children is common and impairs linear growth.

Directory of Open Access Journals (Sweden)

Wayne S Cutfield

Full Text Available BACKGROUND: GH therapy requires daily injections over many years and compliance can be difficult to sustain. As growth hormone (GH is expensive, non-compliance is likely to lead to suboptimal growth, at considerable cost. Thus, we aimed to assess the compliance rate of children and adolescents with GH treatment in New Zealand. METHODS: This was a national survey of GH compliance, in which all children receiving government-funded GH for a four-month interval were included. Compliance was defined as ≥ 85% adherence (no more than one missed dose a week on average to prescribed treatment. Compliance was determined based on two parameters: either the number of GH vials requested (GHreq by the family or the number of empty GH vials returned (GHret. Data are presented as mean ± SEM. FINDINGS: 177 patients were receiving GH in the study period, aged 12.1 ± 0.6 years. The rate of returned vials, but not number of vials requested, was positively associated with HVSDS (p < 0.05, such that patients with good compliance had significantly greater linear growth over the study period (p<0.05. GHret was therefore used for subsequent analyses. 66% of patients were non-compliant, and this outcome was not affected by sex, age or clinical diagnosis. However, Maori ethnicity was associated with a lower rate of compliance. INTERPRETATION: An objective assessment of compliance such as returned vials is much more reliable than compliance based on parental or patient based information. Non-compliance with GH treatment is common, and associated with reduced linear growth. Non-compliance should be considered in all patients with apparently suboptimal response to GH treatment.

Improvement of ZnO TCO film growth for photovoltaic devices by reactive plasma deposition (RPD)

International Nuclear Information System (INIS)

Iwata, K.; Sakemi, T.; Yamada, A.; Fons, P.; Awai, K.; Yamamoto, T.; Shirakata, S.; Matsubara, K.; Tampo, H.; Sakurai, K.; Ishizuka, S.; Niki, S.

2005-01-01

Reactive plasma deposition (RPD) is a technique for depositing a thin film on a substrate using a pressure-slope type plasma ion gun. This method offers the advantage of low-ion damage, low deposition temperature, large area deposition and high growth rates. Ga-doped zinc oxide (ZnO) thin film was grown on a moving glass substrate by RPD. Evaporation of very small quantity of tungsten from anode electrode by plasma collision lets the resistivity of grown ZnO transparent conductive oxide (TCO) film to increase. However, no reduction of carrier concentration was observed but only reduction of carrier mobility. It indicates that reduction of evaporation of tungsten from anode electrode induces increase of carrier mobility without any increase of carrier concentration. After installation of an anode cooling system in order to avoid the tungsten evaporation, increase of the mobility (37 cm 2 /Vsec) was observed and the lowest resistivity (2.0x10 -4 no. OMEGAno. cm) film was obtained from large size grown ZnO TCO of 200x200 mm at low growth temperature of 200 deg. C with high growth rate of 24 no. muno. m/h

In situ growth rate measurements during plasma-enhanced chemical vapour deposition of vertically aligned multiwall carbon nanotube films

International Nuclear Information System (INIS)

Joensson, M; Nerushev, O A; Campbell, E E B

2007-01-01

In situ laser reflectivity measurements are used to monitor the growth of multiwalled carbon nanotube (MWCNT) films grown by DC plasma-enhanced chemical vapour deposition (PECVD) from an iron catalyst film deposited on a silicon wafer. In contrast to thermal CVD growth, there is no initial increase in the growth rate; instead, the initial growth rate is high (as much as 10 μm min -1 ) and then drops off rapidly to reach a steady level (2 μm min -1 ) for times beyond 1 min. We show that a limiting factor for growing thick films of multiwalled nanotubes (MWNTs) using PECVD can be the formation of an amorphous carbon layer at the top of the growing nanotubes. In situ reflectivity measurements provide a convenient technique for detecting the onset of the growth of this layer

Predicting Madura cattle growth curve using non-linear model

Science.gov (United States)

Widyas, N.; Prastowo, S.; Widi, T. S. M.; Baliarti, E.

2018-03-01

Madura cattle is Indonesian native. It is a composite breed that has undergone hundreds of years of selection and domestication to reach nowadays remarkable uniformity. Crossbreeding has reached the isle of Madura and the Madrasin, a cross between Madura cows and Limousine semen emerged. This paper aimed to compare the growth curve between Madrasin and one type of pure Madura cows, the common Madura cattle (Madura) using non-linear models. Madura cattles are kept traditionally thus reliable records are hardly available. Data were collected from small holder farmers in Madura. Cows from different age classes (5years) were observed, and body measurements (chest girth, body length and wither height) were taken. In total 63 Madura and 120 Madrasin records obtained. Linear model was built with cattle sub-populations and age as explanatory variables. Body weights were estimated based on the chest girth. Growth curves were built using logistic regression. Results showed that within the same age, Madrasin has significantly larger body compared to Madura (plogistic models fit better for Madura and Madrasin cattle data; with the estimated MSE for these models were 39.09 and 759.28 with prediction accuracy of 99 and 92% for Madura and Madrasin, respectively. Prediction of growth curve using logistic regression model performed well in both types of Madura cattle. However, attempts to administer accurate data on Madura cattle are necessary to better characterize and study these cattle.

Amorphous-tetrahedral diamondlike carbon layered structures resulting from film growth energetics

Science.gov (United States)

Siegal, M. P.; Barbour, J. C.; Provencio, P. N.; Tallant, D. R.; Friedmann, T. A.

1998-08-01

High-resolution transmission electron microscopy (HRTEM) shows that amorphous-tetrahedral diamondlike carbon (a-tC) films grown by pulsed-laser deposition on Si(100) consist of three-to-four layers, depending on the growth energetics. We estimate the density of each layer using both HRTEM image contrast and Rutherford backscattering spectrometry. The first carbon layer and final surface layer have relatively low density. The bulk of the film between these two layers has higher density. For films grown under the most energetic conditions, there exists a superdense a-tC layer between the interface and bulk layers. The density of all four layers, and the thickness of the surface and interfacial layers, correlate well with the energetics of the depositing carbon species.

Growth and characteristics of PbS/polyvinyl alcohol nanocomposites for flexible high dielectric thin film applications

International Nuclear Information System (INIS)

Hmar, J.J.L.; Majumder, T.; Mondal, S.P.

2016-01-01

PbS/polyvinyl alcohol (PbS/PVA) nanocomposites have been grown by a chemical bath deposition process at various growth temperatures (60–100 °C). Transmission electron microscopy (TEM) study revealed the formation of PbS nanoparticles of diameter 6–20 nm encapsulated in PVA matrix. Optical band gap of the nanocomposite films have been found to decrease (1.45 eV–0.67 eV) with increase in growth temperature from 60 °C to 100 °C. The impedance measurements have been carried out by depositing the PbS/PVA films on indium tin oxide (ITO) coated flexible polyethylene terephthalate (PET) substrates. The room temperature dielectric permittivity and ac conductivity measurements have been carried out for ITO/PbS/PVA/Al devices deposited at various growth temperatures. The nanocomposite films demonstrate superior dielectric permittivity compare to pure PVA polymer. The flexibility studies of ITO/PbS/PVA/Al devices have been performed at different bending angles. - Highlights: • PbS nanoparticles of diameter 6–20 nm were grown in polyvinyl (PVA) matrix. • Optical band gap of nanocomposite films was varied from 1.45–0.67 eV. • The nanocomposite thin films demonstrated superior dielectric permittivity. • Flexibility study of thin film devices was performed at various bending angles.

The influence of growth temperature on the structural characteristics of YBa2Cu3O7-δ films: a Raman scattering study

International Nuclear Information System (INIS)

Belousov, M.V.; Davydov, V.Yu.; Sherman, A.B.

1993-01-01

Orientation of YBa 2 Cu 3 O 7-δ films at the surface and at the film-(100) MgO substrate interface for various growth temperatures T s have been studied using Raman scattering. On the film-substrate interface the films were c-oriented for T s >670 degrees C and a-oriented for lower growth temperatures. Films grown at T s approximately=670 degrees C to a thickness >0.2 mu m contained a transition from the c- to the a-orientation near the surface. A possible mechanism for the influence of growth temperature on the YBa 2 Cu 3 O 7-δ film orientation is discussed. (author)

Linear perturbation growth at the trailing edge of a rarefaction wave

International Nuclear Information System (INIS)

Wouchuk, J.G.; Carretero, R.

2003-01-01

An analytic model for the perturbation growth inside a rarefaction wave is presented. The objective of the work is to calculate the growth of the perturbations at the trailing edge of a simple expanding wave in planar geometry. Previous numerical and analytical works have shown that the ripples at the rarefaction tail exhibit linear growth asymptotically in time [Yang et al., Phys. Fluids 6, 1856 (1994), A. Velikovich and L. Phillips, ibid. 8, 1107 (1996)]. However, closed expressions for the asymptotic value of the perturbed velocity of the trailing edge have not been reported before, except for very weak rarefactions. Explicit analytic solutions for the perturbations growing at the rarefaction trailing edge as a function of time and also for the asymptotic perturbed velocity are given, for fluids with γ<3. The limits of weak and strong rarefactions are considered and the corresponding scaling laws are given. A semi-qualitative discussion of the late time linear growth at the trailing edge ripple is presented and it is seen that the lateral mass flow induced by the sound wave fluctuations is solely responsible for that behavior. Only the rarefactions generated after the interaction of a shock wave with a contact discontinuity are considered

Influence of ion irradiation on internal residual stress in DLC films

Energy Technology Data Exchange (ETDEWEB)

Karaseov, Platon A., E-mail: platon.karaseov@rphf.spbstu.r [St. Petersburg State Polytechnic University, Polytechnicheskaya St. 29, 195251 St. Petersburg (Russian Federation); Podsvirov, Oleg A.; Karabeshkin, Konstantin V. [St. Petersburg State Polytechnic University, Polytechnicheskaya St. 29, 195251 St. Petersburg (Russian Federation); Vinogradov, Andrei Ya. [Ioffe Physicotechnical Institute RAS, Polytechnicheskaya 26, 195252 St. Petersburg (Russian Federation); Azarov, Alexander Yu. [St. Petersburg State Polytechnic University, Polytechnicheskaya St. 29, 195251 St. Petersburg (Russian Federation); Karasev, Nikita N. [State University of Information Technologies, Mechanics and Optics, Sablinskaya Str. 14, 197101 St. Petersburg (Russian Federation); Titov, Andrei I.; Smirnov, Alexander S. [St. Petersburg State Polytechnic University, Polytechnicheskaya St. 29, 195251 St. Petersburg (Russian Federation)

2010-10-01

The dependence of internal residual stress in thin diamond-like carbon films grown on Si substrate by PECVD technique on most important growth parameters, namely RF-power, DC bias voltage and substrate temperature, is described. Results show that compressive stress reaches the highest value of 2.7 GPa at low RF-power and DC bias. Increase of substrate temperature from 250 to 350 {sup o}C leads to nonlinear increase of stress value. Inhomogeneity of residual stress along the film surface disappears when film is deposited at temperatures above 275 {sup o}C. Post-growth film irradiation by P{sup +} and In{sup +} ions cause decrease of compressive stress followed by its inversion to tensile. For all ion energy combinations used residual stress changes linearly with normalized fluence up to 0.2 DPA with slope (8.7 {+-} 1.3) GPa/DPA.

The influence of polymer architectures on the dewetting behavior of thin polymer films: from linear chains to ring chains.

Science.gov (United States)

Wang, Lina; Xu, Lin; Liu, Binyuan; Shi, Tongfei; Jiang, Shichun; An, Lijia

2017-05-03

The dewetting behavior of ring polystyrene (RPS) film and linear polystyrene (LPS) film on silanized Si substrates with different grafting densities and PDMS substrate was investigated. Results showed that polymer architectures greatly influenced the dewetting behavior of the thin polymer film. On the silanized Si substrate with 69% grafting density, RPS chains exhibited stronger adsorption compared with LPS chains, and as a result the wetting layer formed more easily. For LPS films, with a decreased annealing temperature, the stability of the polymer film changed from non-slip dewetting via apparent slip dewetting to apparently stable. However, for RPS films, the polymer film stability switched from apparent slip dewetting to apparently stable. On the silanized Si substrate with 94% grafting density, the chain adsorption became weaker and the dewetting processes were faster than that on the substrate with 69% grafting density at the same experimental temperature for both the LPS and RPS films. Moreover, on the PDMS substrate, LPS films always showed non-slip dewetting, while the dewetting kinetics of RPS films switched from non-slip dewetting to slip dewetting behaviour. Forming the wetting layer strongly influenced the stability and dewetting behavior of the thin polymer films.

Growth of epitaxial Pt thin films on (0 0 1) SrTiO{sub 3} by rf magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Kahsay, A. [Departament de Física Aplicada i Òptica, Universitat de Barcelona, 08028 Barcelona (Spain); Polo, M.C., E-mail: mcpolo@ub.edu [Departament de Física Aplicada i Òptica, Universitat de Barcelona, 08028 Barcelona (Spain); Ferrater, C.; Ventura, J. [Departament de Física Aplicada i Òptica, Universitat de Barcelona, 08028 Barcelona (Spain); Rebled, J.M. [Departament d’Electrònica, Universitat de Barcelona Institut de Nanociència i Nanotecnologia IN 2UB, 08028 Barcelona (Spain); Varela, M. [Departament de Física Aplicada i Òptica, Universitat de Barcelona, 08028 Barcelona (Spain)

2014-07-01

The growth of platinum thin film by rf magnetron sputtering on SrTiO{sub 3}(0 0 1) substrates for oxide based devices was investigated. Platinum films grown at temperatures higher than 750 °C were epitaxial ([1 0 0]Pt(0 0 1)//[1 0 0]STO(0 0 1)), whereas at lower temperatures Pt(1 1 1) films were obtained. The surface morphology of the Pt films showed a strong dependence on the deposition temperature as was revealed by atomic force microscopy (AFM). At elevated temperatures there is a three-dimensional (3D) growth of rectangular atomically flat islands with deep boundaries between them. On the other hand, at low deposition temperatures, a two-dimensional (2D) layered growth was observed. The transition from 2D to 3D growth modes was observed that occurs for temperatures around 450 °C. The obtained epitaxial thin films also formed an atomically sharp interface with the SrTiO{sub 3}(0 0 1) substrate as confirmed by HRTEM.

Investigation of plasma dynamics during the growth of amorphous titanium dioxide thin films

Science.gov (United States)

Kim, Jin-Soo; Jee, Hyeok; Yu, Young-Hun; Seo, Hye-Won

2018-06-01

We have grown amorphous titanium dioxide thin films by reactive DC sputtering method using a different argon/oxygen partial pressure at a room temperature. The plasma dynamics of the process, reactive and sputtered gas particles was investigated via optical emission spectroscopy. We then studied the correlations between the plasma states and the structural/optical properties of the films. The growth rate and morphology of the titanium dioxide thin films turned out to be contingent with the population and the energy profile of Ar, O, and TiO plasma. In particular, the films grown under energetic TiO plasma have shown a direct band-to-band transition with an optical energy band gap up to ∼4.2 eV.

Growth Related Carrier Mobility Enhancement of Pentacene Thin-Film Transistors with High-k Oxide Gate Dielectric

International Nuclear Information System (INIS)

Ai-Fang, Yu; Qiong, Qi; Peng, Jiang; Chao, Jiang

2009-01-01

Carrier mobility enhancement from 0.09 to 0.59 cm 2 /Vs is achieved for pentacene-based thin-film transistors (TFTs) by modifying the HfO 2 gate dielectric with a polystyrene (PS) thin film. The improvement of the transistor's performance is found to be strongly related to the initial film morphologies of pentacene on the dielectrics. In contrast to the three-dimensional island-like growth mode on the HfO 2 surface, the Stranski-Krastanov growth mode on the smooth and nonpolar PS/HfO 2 surface is believed to be the origin of the excellent carrier mobility of the TFTs. A large well-connected first monolayer with fewer boundaries is formed via the Stranski–Krastanov growth mode, which facilitates a charge transport parallel to the substrate and promotes higher carrier mobility. (cross-disciplinary physics and related areas of science and technology)

A Dew Point Meter Comprising a Nanoporous Thin Film Alumina Humidity Sensor with a Linearizing Capacitance Measuring Electronics

Directory of Open Access Journals (Sweden)

Dilip Kumar Ghara

2008-02-01

Full Text Available A novel trace moisture analyzer is presented comprising a capacitive nanoporous film of metal oxide sensor and electronics. The change in capacity of the sensor is due to absorption of water vapor by the pores. A simple capacitance measuring electronics is developed which can detect any change in capacitance and correlates to ambient humidity. The circuit can minimize the parasitic earth capacitance. The non linear response of the sensor is linearized with a micro-controller linearizing circuit. The experimental result shows a resolution of -4°C DP and accuracy within 2%.

Kinetics of sub-spinodal dewetting of thin films of thickness dependent viscosity.

Science.gov (United States)

Kotni, Tirumala Rao; Khanna, Rajesh; Sarkar, Jayati

2017-05-04

An alternative explanation of the time varying and very low growth exponents in dewetting of polymer films like polystyrene films is presented based on non-linear simulations. The kinetics of these films is explored within the framework of experimentally observed thickness dependent viscosity. These films exhibit sub-spinodal dewetting via formation of satellite holes in between primary dewetted holes under favorable conditions of excess intermolecular forces and film thicknesses. We find that conditions responsible for sub-spinodal dewetting concurrently lead to remarkable changes in the kinetics of dewetting of even primary holes. For example, the radius of the hole grows in time with a power-law growth exponent sequence of [Formula: see text], in contrast to the usual  ∼4/5. This is due to the cumulative effect of reduced rim mobility due to thickness dependent viscosity and hindrance created by satellite holes.

Molecular beam epitaxy growth of InSb1−xBix thin films

DEFF Research Database (Denmark)

Song, Yuxin; Wang, Shumin; Saha Roy, Ivy

2013-01-01

Molecular beam epitaxy growth for InSb1−xBix thin films on (100) GaAs substrates is reported. Successful Bi incorporation for 2% is achieved, and up to 70% of the incorporated Bi atoms are at substitutional sites. The effects of growth parameters on Bi incorporation and surface morphology are stu...

Initial stages of the ion-beam assisted epitaxial GaN film growth on 6H-SiC(0001)

International Nuclear Information System (INIS)

Neumann, L.; Gerlach, J.W.; Rauschenbach, B.

2012-01-01

Ultra-thin gallium nitride (GaN) films were deposited using the ion-beam assisted molecular-beam epitaxy technique. The influence of the nitrogen ion to gallium atom flux ratio (I/A ratio) during the early stages of GaN nucleation and thin film growth directly, without a buffer layer on super-polished 6H-SiC(0001) substrates was studied. The deposition process was performed at a constant substrate temperature of 700 °C by evaporation of Ga and irradiation with hyperthermal nitrogen ions from a constricted glow-discharge ion source. The hyperthermal nitrogen ion flux was kept constant and the kinetic energy of the ions did not exceed 25 eV. The selection of different I/A ratios in the range from 0.8 to 3.2 was done by varying the Ga deposition rate between 5 × 10 13 and 2 × 10 14 at. cm −2 s −1 . The crystalline surface structure during the GaN growth was monitored in situ by reflection high-energy electron diffraction. The surface topography of the films as well as the morphology of separated GaN islands on the substrate surface was examined after film growth using a scanning tunneling microscope without interruption of ultra-high vacuum. The results show, that the I/A ratio has a major impact on the properties of the resulting ultra-thin GaN films. The growth mode, the surface roughness, the degree of GaN coverage of the substrate and the polytype mixture depend notably on the I/A ratio. - Highlights: ► Ultra-thin epitaxial GaN films prepared by hyperthermal ion-beam assisted deposition. ► Surface structure and topography studied during and after initial growth stages. ► Growth mode dependent on nitrogen ion to gallium atom flux ratio. ► Change from three-dimensional to two-dimensional growth for Ga-rich growth conditions.

The properties of TiN ultra-thin films grown on SiO{sub 2} substrate by reactive high power impulse magnetron sputtering under various growth angles

Energy Technology Data Exchange (ETDEWEB)

Shayestehaminzadeh, S., E-mail: ses30@hi.is [Science Institute, University of Iceland, Dunhaga 3, IS-107 Reykjavik (Iceland); Tryggvason, T.K. [Science Institute, University of Iceland, Dunhaga 3, IS-107 Reykjavik (Iceland); Karlsson, L. [School of Engineering and Science, Jacobs University Bremen, Campus Ring 1, 28759 Bremen (Germany); Olafsson, S. [Science Institute, University of Iceland, Dunhaga 3, IS-107 Reykjavik (Iceland); Gudmundsson, J.T. [Science Institute, University of Iceland, Dunhaga 3, IS-107 Reykjavik (Iceland); University of Michigan-Shanghai Jiao Tong University, University Joint Institute, Shanghai Jiao Tong University, 800 Dong Chuan Road, Shanghai 200240 (China)

2013-12-02

Thin TiN films were grown on SiO{sub 2} by reactive high power impulse magnetron sputtering (HiPIMS) and conventional dc magnetron sputtering (dcMS) while varying the angle between the target and the substrate surface from 0° (on-axis growth) to 90° (off-axis growth). Surface morphology and structural characterization were carried out using X-ray diffraction and reflection methods and the film properties were compared. The dcMS process shows higher growth rate than the HiPIMS process for on-axis grown films but the dcMS growth rate drops drastically for off-axis growth while the HiPIMS growth rate decreases slowly with increased angle between target and substrate for off-axis growth and becomes comparable to the dcMS growth rate. The dcMS grown films exhibit angle dependence in the density and surface roughness while the HiPIMS process creates denser and smoother films that are less angle dependent in all aspects. It was observed that the HiPIMS grown films remain poly-crystalline for all angles of rotation while the dcMS grown films are somewhat amorphous after 60°. The [111] and [200] grain sizes are comparable to the total film thickness in the HiPIMS grown films for all angles of rotation. In the case of dcMS, the [111], [200] and [220] grain sizes are roughly of the same size and much smaller than the total thickness for all growth angles except at 60° and higher. - Highlights: • TiN films were grown on SiO{sub 2} by HiPIMS and dcMS under various growth angles. • Influence of growth angle α = 0–90° on deposition rate and film quality was studied. • The HiPIMS process produces denser and smoother films for all growth angles. • At α = 0°, the growth rate of HiPIMS is 25% of dcMS while it is 50% at 90°. • The HiPIMS grown films remain poly-crystalline for all growth angles.

Effect of Growth Temperature on the Structural and Electrical Properties of ZrO2 Films Fabricated by Atomic Layer Deposition Using a CpZr[N(CH32]3/C7H8 Cocktail Precursor

Directory of Open Access Journals (Sweden)

Jong-Ki An

2018-03-01

Full Text Available The effect of growth temperature on the atomic layer deposition of zirconium oxide (ZrO2 dielectric thin films that were fabricated using a CpZr[N(CH32]3/C7H8 cocktail precursor with ozone was investigated. The chemical, structural, and electrical properties of ZrO2 films grown at temperatures from 250 to 350 °C were characterized. Stoichiometric ZrO2 films formed at 250–350 °C with an atomic ratio of O to Zr of 1.8–1.9 and a low content of carbon impurities. The film formed at 300 °C was predominantly the tetragonal crystalline phase, whereas that formed at 350 °C was a mixture of tetragonal and monoclinic phases. Electrical properties, such as capacitance, leakage current, and voltage linearity of TiN/ZrO2/TiN capacitors fabricated using the thin ZrO2 films grown at different temperatures were compared capacitor applications. The ZrO2 film grown at 300 °C exhibited low impurity content, predominantly tetragonal crystalline structure, a high dielectric permittivity of 38.3, a low leakage current of below 10−7 A/cm2 at 2 V, and low-voltage linearity.

[Linear growth retardation in children under five years of age: a baseline study].

Science.gov (United States)

Rissin, Anete; Figueiroa, José Natal; Benício, Maria Helena D'Aquino; Batista Filho, Malaquias

2011-10-01

The scope of this study was to describe the prevalence of, and analyze factors associated with, linear growth retardation in children. The baseline study analyzed 2040 children under the age of five, establishing a possible association between growth delay (height/age index non-binary variables, there was a positive association with roof type and number of inhabitants per room and a negative association with income per capita, mother's schooling and birth weight. The adjusted analysis also indicated water supply, visit from the community health agent, birth delivery location, internment for diarrhea, or for pneumonia and birth weight as significant variables. Several risk factors were identified for linear growth retardation pointing to the multi-causal aspects of the problem and highlighting the need for control measures by the various hierarchical government agents.

Growth and transport properties of thin Co-based Heusler films; Wachstum und Transporteigenschaften duenner Co-basierter Heusler-Filme

Energy Technology Data Exchange (ETDEWEB)

Schneider, Horst

2010-07-01

During this work, thin films of Co-based Heusler compounds were deposited under optimized conditions, and their structural, magnetic, and transport properties were investigated. The growth of the thin film samples was accomplished by two different methods. At first Co{sub 2}Cr{sub 0.6}Fe{sub 0.4}Al and Co{sub 2}FeSi were deposited by sputter deposition from stoichiometric targets. This is considered the standard technique for the preparation of thin Heusler films. Also for the compounds investigated here it resulted in samples with a high degree of L2{sub 1} ordering. An excess of Fe atoms on Si sites was discovered by a detailed X-ray analysis in conjunction with NMR spectroscopy. The choice of different substrates allowed the adjustment of the growth direction. On the other hand, bulk magnetometry revealed that these sputter deposited films exhibit only a reduced magnetic moment, which is an indication of a reduced spin asymmetry at the Fermi level. One source of this problem seems to be a high residual gas pressure, which leads to an increased sample contamination. To improve this situation, a pulsed laser deposition system was constructed and put into operation. The resulting film growth under ultra-high vacuum conditions led to a further improvement of the short-range crystallographic ordering and a clear enhancement of the magnetic properties. The additional use of a metallic buffer layer resulted in samples with a smooth surface. This opens the door for a number of further analytical experiments, such as tunneling spectroscopy or Brillouin light scattering. After this successful demonstration of this growth technique, an additional method for the flexible variation of the film stoichiometry was implemented. In this work, this method was successfully applied in the deposition of Co{sub 2}Mn{sub 1-x}Fe{sub x}Si films. All samples in this series show a high degree of atomic ordering. Their magnetization values are compatible with the Slater-Pauling rule for

Nucleation, growth and evolution of calcium phosphate films on calcite.

Science.gov (United States)

Naidu, Sonia; Scherer, George W

2014-12-01

Marble, a stone composed of the mineral calcite, is subject to chemically induced weathering in nature due to its relatively high dissolution rate in acid rain. To protect monuments and sculpture from corrosion, we are investigating the application of thin layers of hydroxyapatite (HAP) onto marble. The motivation for using HAP is its low dissolution rate and crystal and lattice compatibility with calcite. A mild, wet chemical synthesis route, in which diammonium hydrogen phosphate salt was reacted with marble, alone and with cationic and anionic precursors under different reaction conditions, was used to produce inorganic HAP layers on marble. Nucleation and growth on the calcite substrate was studied, as well as metastable phase evolution, using scanning electron microscopy, grazing incidence X-ray diffraction, and atomic force microscopy. Film nucleation was enhanced by surface roughness. The rate of nucleation and the growth rate of the film increased with cationic (calcium) and anionic (carbonate) precursor additions. Calcium additions also influenced phase formation, introducing a metastable phase (octacalcium phosphate) and a different phase evolution sequence. Copyright © 2014 Elsevier Inc. All rights reserved.

Growth of thin films of TiN on MgO(100) monitored by high-pressure RHEED

DEFF Research Database (Denmark)

Pryds, Nini; Cockburn, D.; Rodrigo, Katarzyna Agnieszka

2008-01-01

Reflection high-energy electron diffraction (RHEED) operated at high pressure has been used to monitor the initial growth of titanium nitride (TiN) thin films on single-crystal (100) MgO substrates by pulsed laser deposition (PLD). This is the first RHEED study where the growth of TiN films...... electron microscopy. These observations are in good agreement with the three-dimensional Volmer-Weber growth type, by which three-dimensional crystallites are formed and later cause a continuous surface roughening. This leads to an exponential decrease in the intensity of the specular spot in the RHEED...

Association between parental socio-demographic factors and declined linear growth of young children in Jakarta

Directory of Open Access Journals (Sweden)

Hartono Gunardi

2018-02-01

Full Text Available Background: In Indonesia, approximately 35.5% of children under five years old were stunted. Stunting is related to shorter adult stature, poor cognition and educational performance, low adult wages, lost productivity, and higher risk of nutrition-related chronic disease. The aim of this study was to identify parental socio-demographic risk factors of declined linear growth in children younger than 2 years old.Methods: This was a cohort-prospective study between August 2012 and May 2014 at three primary community health care centers (Puskesmas in Jakarta, Indonesia, namely Puskesmas Jatinegara, Mampang, and Tebet. Subjects were healthy children under 2 years old, in which their weight and height were measured serially (at 6–11 weeks old and 18–24 months old. The length-for-age based on those data was used to determine stature status. The serial measurement was done to detect growth pattern. Parental socio-demographic data were obtained from questionnairesResults: From the total of 160 subjects, 14 (8.7% showed declined growth pattern from normal to stunted and 10 (6.2% to severely stunted. As many as 134 (83.8% subjects showed consistent normal growth pattern. Only 2 (1.2% showed improvement in the linear growth. Maternal education duration less than 9 years (RR=2.60, 95% CI=1.23–5.46; p=0.02 showed statistically significant association with declined linear growth in children.Conclusion: Mother with education duration less than 9 years was the determining socio-demographic risk factor that contributed to the declined linear growth in children less than 2 years of age.

Synchrotron x-ray-diffraction study of the structure and growth of Xe films adsorbed on the Ag(111) surface

International Nuclear Information System (INIS)

Dai, P.; Wu, Z.; Angot, T.; Wang, S.; Taub, H.; Ehrlich, S.N.

1999-01-01

Synchrotron x-ray scattering has been used to investigate the structure and growth of perhaps the simplest of all films: xenon physisorbed on the Ag(111) surface. High-resolution x-ray scans of the in-plane structure and lower-resolution scans (specular and nonspecular) of the out-of-plane order were performed. The Xe films were prepared under both quasiequilibrium and kinetic growth conditions, and have fewer structural defects than those investigated previously by others on graphite substrates. Under quasiequilibrium conditions, the bulk Xe-Xe spacing is reached at monolayer completion, and the monolayer and bilayer lattice constants at coexistence are inferred equal to within 0.005 Angstrom, consistent with theoretical calculations. The Xe/vacuum interface profile for a complete monolayer and bilayer grown at quasiequilibrium is found to be sharper than for kinetically grown films. At coverages above two layers, diffraction scans along the Xe(01l) rod for quasiequilibrated films are consistent with the presence of two domains having predominantly an ABC stacking sequence and rotated 60 degree with respect to each other about the surface normal. Annealing of these films alters neither the population of the two domains nor the fraction of ABA stacking faults. The thickest film grown under quasiequilibrium conditions exceeds 220 Angstrom (resolution limited). Under kinetic growth conditions, x-ray intensity oscillations at the Xe anti-Bragg position of the specular rod are observed as a function of time, indicating nearly layer-by-layer growth. Up to four complete oscillations corresponding to a film of eight layers have been observed before the intensity is damped out; the number of oscillations is found to depend on the substrate temperature, the growth rate, and the quality of the Ag(111) substrate. The specular reflectivity from kinetically grown films at nominal coverages of three and four layers has been analyzed using a Gaussian model which gives a film

Epitaxial growth of topological insulator Bi{sub 2}Se{sub 3} film on Si(111) with atomically sharp interface

Energy Technology Data Exchange (ETDEWEB)

Bansal, Namrata [Department of Electrical and Computer Engineering, Rutgers, State University of New Jersey, Piscataway, NJ 08854 (United States); Kim, Yong Seung [Graphene Research Institute, Sejong University, Seoul 143-747 (Korea, Republic of); Edrey, Eliav; Brahlek, Matthew; Horibe, Yoichi [Department of Physics and Astronomy, Rutgers, State University of New Jersey, Piscataway, NJ 08854 (United States); Iida, Keiko; Tanimura, Makoto [Research Department, Nissan Arc, Ltd. Yokosuka, Kanagawa 237-0061 (Japan); Li Guohong; Feng Tian; Lee, Hang-Dong; Gustafsson, Torgny; Andrei, Eva [Department of Physics and Astronomy, Rutgers, State University of New Jersey, Piscataway, NJ 08854 (United States); Oh, Seongshik, E-mail: ohsean@physics.rutgers.edu [Department of Physics and Astronomy, Rutgers, the State University of New Jersey, Piscataway, NJ 08854 (United States)

2011-10-31

Atomically sharp epitaxial growth of Bi{sub 2}Se{sub 3} films is achieved on Si(111) substrate with molecular beam epitaxy. Two-step growth process is found to be a key to achieve interfacial-layer-free epitaxial Bi{sub 2}Se{sub 3} films on Si substrates. With a single-step high temperature growth, second phase clusters are formed at an early stage. On the other hand, with low temperature growth, the film tends to be disordered even in the absence of a second phase. With a low temperature initial growth followed by a high temperature growth, second-phase-free atomically sharp interface is obtained between Bi{sub 2}Se{sub 3} and Si substrate, as verified by reflection high energy electron diffraction (RHEED), transmission electron microscopy (TEM) and X-ray diffraction. The lattice constant of Bi{sub 2}Se{sub 3} is observed to relax to its bulk value during the first quintuple layer according to RHEED analysis, implying the absence of strain from the substrate. TEM shows a fully epitaxial structure of Bi{sub 2}Se{sub 3} film down to the first quintuple layer without any second phase or an amorphous layer.

High Growth Rate Deposition of Hydrogenated Amorphous Silicon-Germanium Films and Devices Using ECR-PECVD

Energy Technology Data Exchange (ETDEWEB)

Liu, Yong [Iowa State Univ., Ames, IA (United States)

2002-01-01

Hydrogenated amorphous silicon germanium films (a-SiGe:H) and devices have been extensively studied because of the tunable band gap for matching the solar spectrum and mature the fabrication techniques. a-SiGe:H thin film solar cells have great potential for commercial manufacture because of very low cost and adaptability to large-scale manufacturing. Although it has been demonstrated that a-SiGe:H thin films and devices with good quality can be produced successfully, some issues regarding growth chemistry have remained yet unexplored, such as the hydrogen and inert-gas dilution, bombardment effect, and chemical annealing, to name a few. The alloying of the SiGe introduces above an order-of-magnitude higher defect density, which degrades the performance of the a-SiGe:H thin film solar cells. This degradation becomes worse when high growth-rate deposition is required. Preferential attachment of hydrogen to silicon, clustering of Ge and Si, and columnar structure and buried dihydride radicals make the film intolerably bad. The work presented here uses the Electron-Cyclotron-Resonance Plasma-Enhanced Chemical Vapor Deposition (ECR-PECVD) technique to fabricate a-SiGe:H films and devices with high growth rates. Helium gas, together with a small amount of H₂, was used as the plasma species. Thickness, optical band gap, conductivity, Urbach energy, mobility-lifetime product, I-V curve, and quantum efficiency were characterized during the process of pursuing good materials. The microstructure of the a-(Si,Ge):H material was probed by Fourier-Transform Infrared spectroscopy. They found that the advantages of using helium as the main plasma species are: (1) high growth rate--the energetic helium ions break the reactive gas more efficiently than hydrogen ions; (2) homogeneous growth--heavy helium ions impinging on the surface promote the surface mobility of the reactive radicals, so that heteroepitaxy growth as clustering of Ge and Si, columnar structure are

Influence of the linear magneto-electric effect on the lateral shift of light reflected from a magneto-electric film

International Nuclear Information System (INIS)

Dadoenkova, Yu S; Petrov, R V; Bichurin, M I; Bentivegna, F F L; Dadoenkova, N N; Lyubchanskii, I L

2016-01-01

We present a theoretical investigation of the lateral shift of an infrared light beam reflected from a magnetic film deposited on a non-magnetic dielectric substrate, taking into account the linear magneto-electric interaction in the magnetic film. We use the stationary phase method to evaluate the lateral shift. It is shown that the magneto-electric coupling leads to a six-fold enhancement of the lateral shift amplitude of a p-(s-) polarized incident beam reflected into a s-(p-) polarized beam. A reversal of the magnetization in the film leads to a nonreciprocal sign change of the lateral shift. (paper)

Growth of Sr2CrReO6 epitaxial thin films by pulsed laser deposition

International Nuclear Information System (INIS)

Orna, J.; Morellon, L.; Algarabel, P.A.; Pardo, J.A.; Magen, C.; Varela, M.; Pennycook, S.J.; De Teresa, J.M.; Ibarra, M.R.

2010-01-01

We report the growth, structural, magnetic, and electrical transport properties of epitaxial Sr 2 CrReO 6 thin films. We have succeeded in depositing films with a high crystallinity and a relatively large cationic order in a narrow window of growth parameters. The epitaxy relationship is Sr 2 CrReO 6 (SCRO) (0 0 1) [1 0 0]-parallel SrTiO 3 (STO) (0 0 1) [1 1 0] as determined by high-resolution X-ray diffraction and scanning transmission electron microscopy (STEM). Typical values of saturation magnetization of M S (300 K)=1 μ B /f.u. and ρ (300 K)=2.8 mΩ cm have been obtained in good agreement with previous published results in sputtered epitaxial thin films. We estimate that the antisite defects concentration in our thin films is of the order of 14%, and the measured Curie temperature is T C =481(2) K. We believe these materials be of interest as electrodes in spintronic devices.

Growth, structural, optical and electrical study of ZnS thin films deposited by solution growth technique (SGT)

Energy Technology Data Exchange (ETDEWEB)

Sadekar, H K [Arts, Commerce and Science college, Sonai 414105 (M.S.) (India); Thin film and Nanotechnology Laboratory, Department of Physics, Dr. B.A.M. University, Aurangabad 431004 (M.S.) (India); Deshpande, N G; Gudage, Y G; Ghosh, A; Chavhan, S D; Gosavi, S R [Thin film and Nanotechnology Laboratory, Department of Physics, Dr. B.A.M. University, Aurangabad 431004 (M.S.) (India); Sharma, Ramphal [Thin film and Nanotechnology Laboratory, Department of Physics, Dr. B.A.M. University, Aurangabad 431004 (M.S.) (India)

2008-04-03

ZnS thin films have been deposited onto glass substrates at temperature 90 deg. C by solution growth technique (SGT). The deposition parameters were optimized. Triethanolamine (TEA) was used as a complexing agent for uniform deposition of the thin films. The elemental composition of the film was confirmed by energy dispersive analysis by X-ray (EDAX) technique. Structure and surface morphology of as-deposited films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM), atomic force microscopy (AFM), respectively. XRD patterns reveal that as-deposited thin films were amorphous in nature; while the obtained precipitate powder was polycrystalline in nature. SEM results revealed that deposited ZnS material has {approx}120 {+-} 20 nm average grain size and the spherical grains are distributed over the entire glass substrate. Low surface roughness was found to be 2.7 nm from AFM studies. Transmission spectra indicate a high transmission coefficient ({approx}75%) with direct band gap energy equal to 3.72 eV while indirect band gap was found to be 3.45 eV. A photoluminescence (PL) study of the ZnS at room temperature (300 K) indicates a strong luminescence band at energy 2.02 eV.

Growth and structure of Co/Au magnetic thin films; Croissance et structure des couches minces magnetiques Co/Au

Energy Technology Data Exchange (ETDEWEB)

Marsot, N

1999-01-14

We have studied the growth and the crystallographic structure of magnetic ultra thin cobalt/gold films (Co/Au), in order to investigate the correlations between their magnetic and structural properties. Room temperature (R.T.) Co growth on Au (111) proceeds in three stages. Up to 2 Co monolayers (ML), a bilayer island growth mode is observed. Between 2 and 5 ML, coalescence of the islands occurs, covering the substrate surface and a Co/Au mixing is observed resulting from the de-construction of the Herringbone reconstruction. Finally, beyond 5 ML, the CoAu mixing is buried and the Co growth continues in a 3-D growth. Annealing studies at 600 K on this system show a smoothing effect of the Co film, and at the same time, segregation of Au atoms. The quality of the Co/Au interface (sharpness) is not enhanced by the annealing. The local order was studied by SEXAFS and the long range order by GIXRD showing that the Co film has a hexagonal close packed structure, with an easy magnetization axis perpendicular to the surface. From a local order point of view, the Co grows with an incoherent epitaxy and keeps its own bulk parameters. The GIXRD analysis shows a residual strain in the Co film of 4%. The difference observed between the local order analysis and the long range order results is explained in terms of the low dimensions of the diffracting domains. The evolution of film strains, as a function of the Co coverage, shows a marked deviation from the elastic strain theory. Modification of the strain field in the Co film as a function of the Au coverage is studied by GIXRD analysis. The Au growth study, at R.T., shows no evidence of a Au/Co mixing in the case of the Au/Co interface. The Au overlayer adopts a twinned face centred cubic structure on the rough Co film surface. (author)

Increased linear bone growth by GH in the absence of SOCS2 is independent of IGF-1.

Science.gov (United States)

Dobie, Ross; Ahmed, Syed F; Staines, Katherine A; Pass, Chloe; Jasim, Seema; MacRae, Vicky E; Farquharson, Colin

2015-11-01

Growth hormone (GH) signaling is essential for postnatal linear bone growth, but the relative importance of GHs actions on the liver and/or growth plate cartilage remains unclear. The importance of liver derived insulin like-growth factor-1 (IGF-1) for endochondral growth has recently been challenged. Here, we investigate linear growth in Suppressor of Cytokine Signaling-2 (SOCS2) knockout mice, which have enhanced growth despite normal systemic GH/IGF-1 levels. Wild-type embryonic ex vivo metatarsals failed to exhibit increased linear growth in response to GH, but displayed increased Socs2 transcript levels (P growth over a 12 day period. Despite this increase, IGF-1 transcript and protein levels were not increased in response to GH. In accordance with these data, IGF-1 levels were unchanged in GH-challenged postnatal Socs2(-/-) conditioned medium despite metatarsals showing enhanced linear growth. Growth-plate Igf1 mRNA levels were not elevated in juvenile Socs2(-/-) mice. GH did however elevate IGF-binding protein 3 levels in conditioned medium from GH challenged metatarsals and this was more apparent in Socs2(-/-) metatarsals. GH did not enhance the growth of Socs2(-/-) metatarsals when the IGF receptor was inhibited, suggesting that IGF receptor mediated mechanisms are required. IGF-2 may be responsible as IGF-2 promoted metatarsal growth and Igf2 expression was elevated in Socs2(-/-) (but not WT) metatarsals in response to GH. These studies emphasise the critical importance of SOCS2 in regulating GHs ability to promote bone growth. Also, GH appears to act directly on the metatarsals of Socs2(-/-) mice, promoting growth via a mechanism that is independent of IGF-1. © 2014 The Authors. Journal of Cellular Physiology Published by Wiley Periodicals, Inc.

Attachment and growth of human bone marrow derived mesenchymal stem cells on regenerated antheraea pernyi silk fibroin films

Energy Technology Data Exchange (ETDEWEB)

Luan Xiying [Institute of Medical Biotechnology, Jiangsu Province Key Laboratory of Stem Cell, Suzhou University, Suzhou 215007 (China); Wang Yong [Institute of Medical Biotechnology, Jiangsu Province Key Laboratory of Stem Cell, Suzhou University, Suzhou 215007 (China); Duan Xiang [Institute of Medical Biotechnology, Jiangsu Province Key Laboratory of Stem Cell, Suzhou University, Suzhou 215007 (China); Duan Qiaoyan [Institute of Medical Biotechnology, Jiangsu Province Key Laboratory of Stem Cell, Suzhou University, Suzhou 215007 (China); Li Mingzhong [School of Materials Engineering, Suzhou University, Suzhou 215006 (China); Lu Shenzhou [School of Materials Engineering, Suzhou University, Suzhou 215006 (China); Zhang Huanxiang [Institute of Medical Biotechnology, Jiangsu Province Key Laboratory of Stem Cell, Suzhou University, Suzhou 215007 (China); Zhang Xueguang [Institute of Medical Biotechnology, Jiangsu Province Key Laboratory of Stem Cell, Suzhou University, Suzhou 215007 (China)

2006-12-15

Silk fibroin of the silkworm Bombyx mori has been studied extensively, while the research on Antheraea pernyi silk fibroin (A. pernyi SF) in biomaterials is only at an early stage. In this study, the attachment, morphology, growth and phenotype of human bone marrow derived mesenchymal stem cells (hBMSCs) cultured on the regenerated A. pernyi SF films were studied in vitro. The results indicated that the attachment of hBMSCs on the regenerated A. pernyi SF films was almost the same as that on the collagen films. MTT and cell counting analyses demonstrated that the growth of hBMSCs on the regenerated A. pernyi SF films was better than that on controls. Moreover, electron scanning microscopy and fluorescence-activated cell sorting assays showed that the regenerated A. pernyi SF supported hBMSCs growth and functional maintenance compared with the controls. These data suggest that the regenerated A. pernyi SF, like Bombyx mori silk fibroin (B. mori SF) and collagen, can support hBMSCs attachment, growth and phenotypic maintenance, and has better biocompatibilities for hBMSCs in vitro culture.

Attachment and growth of human bone marrow derived mesenchymal stem cells on regenerated antheraea pernyi silk fibroin films

International Nuclear Information System (INIS)

Luan Xiying; Wang Yong; Duan Xiang; Duan Qiaoyan; Li Mingzhong; Lu Shenzhou; Zhang Huanxiang; Zhang Xueguang

2006-01-01

Silk fibroin of the silkworm Bombyx mori has been studied extensively, while the research on Antheraea pernyi silk fibroin (A. pernyi SF) in biomaterials is only at an early stage. In this study, the attachment, morphology, growth and phenotype of human bone marrow derived mesenchymal stem cells (hBMSCs) cultured on the regenerated A. pernyi SF films were studied in vitro. The results indicated that the attachment of hBMSCs on the regenerated A. pernyi SF films was almost the same as that on the collagen films. MTT and cell counting analyses demonstrated that the growth of hBMSCs on the regenerated A. pernyi SF films was better than that on controls. Moreover, electron scanning microscopy and fluorescence-activated cell sorting assays showed that the regenerated A. pernyi SF supported hBMSCs growth and functional maintenance compared with the controls. These data suggest that the regenerated A. pernyi SF, like Bombyx mori silk fibroin (B. mori SF) and collagen, can support hBMSCs attachment, growth and phenotypic maintenance, and has better biocompatibilities for hBMSCs in vitro culture

Growth and structure of L1 sub 0 ordered FePt films on GaAs(001)

CERN Document Server

Nefedov, A; Theis-Broehl, K; Zabel, H; Doi, M; Schuster, E; Keune, W

2002-01-01

The structural properties of epitaxial L1 sub 0 ordered FePt(001) films, grown by molecular beam epitaxy (alternating deposition of Fe and Pt atomic layers) on buffer-Pt/seed-Fe/GaAs(001) have been studied by in situ reflection high-energy electron diffraction and by ex situ x-ray scattering as a function of the growth conditions. Reflection high-energy electron diffraction intensity oscillations measured during FePt layer growth provide evidence for island growth at T sub s = 200 deg. C and quasi layer-by-layer growth at T sub s = 350 deg. C. From small-angle and wide-angle x-ray scattering it was found that the degree of epitaxy depends critically on morphology of the seed layer and the substrate roughness. X-ray diffraction analysis showed that the long-range order parameter increases from near zero for films grown at 200 deg. C to 0.65 for films grown at 350 deg. C. This confirms the fact that the order parameter is mainly determined by the surface mobility of the atoms which is controlled experimentally ...

Low-temperature growth of high quality AlN films on carbon face 6H-SiC

Energy Technology Data Exchange (ETDEWEB)

Kim, Myunghee [Department of General Systems Studies, The University of Tokyo, 3-8-1 Komaba, Meguro-ku, Tokyo 153-8902 (Japan); Ohta, Jitsuo; Fujioka, Hiroshi [Institute of Industrial Science (IIS), The University of Tokyo, 4-6-1 Komaba, Tokyo 153-8505 (Japan); Kanagawa Academy of Science and Technology (KAST), 3-2-1 Sakado, Kawasaki 213-0012 (Japan); Kobayashi, Atsushi [Institute of Industrial Science (IIS), The University of Tokyo, 4-6-1 Komaba, Tokyo 153-8505 (Japan); Oshima, Masaharu [Department of General Systems Studies, The University of Tokyo, 3-8-1 Komaba, Meguro-ku, Tokyo 153-8902 (Japan); Department of Applied Chemistry, The University of Tokyo, 4-3-1 Hongo, Tokyo 113-8656 (Japan); Core Research for Evolutional Science and Technology (CREST), Japan Science and Technology Agency (JST), Chiyoda-ku, Tokyo 102-0075 (Japan)

2008-01-15

AlN films have been grown on atomically flat carbon face 6H-SiC (000 anti 1) substrates by pulsed laser deposition and their structural properties have been investigated. In-situ reflection high-energy electron diffraction observations have revealed that growth of AlN at 710 C proceeds in a Stranski-Krastanov mode, while typical layer-by-layer growth occurs at room temperature (RT) with atomically flat surfaces. It has been revealed that the crystalline quality of the AlN film is dramatically improved by the reduction in growth temperature down to RT and the full width at half maximum values in the X-ray rocking curves for 0004 and 10 anti 12 diffractions of the RT-grown AlN film are 0.05 and 0.07 , respectively. X-ray reciprocal space mapping has revealed that the introduction of misfit dislocations is suppressed in the case of RT growth, which is probably responsible for the improvement in crystalline quality. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Epitaxial growth of fcc-CoxNi100-x thin films on MgO(110) single-crystal substrates

International Nuclear Information System (INIS)

Ohtake, Mitsuru; Nukaga, Yuri; Sato, Yoichi; Futamoto, Masaaki; Kirino, Fumiyoshi

2009-01-01

Co x Ni 100-x (x=100, 80, 20, 0 at. %) epitaxial thin films were prepared on MgO(110) single-crystal substrates heated at 300 deg. C by ultrahigh vacuum molecular beam epitaxy. The growth mechanism is discussed based on lattice strain and crystallographic defects. CoNi(110) single-crystal films with a fcc structure are obtained for all compositions. Co x Ni 100-x film growth follows the Volmer-Weber mode. X-ray diffraction analysis indicates that the out-of-plane and the in-plane lattice spacings of the Co x Ni 100-x films are in agreement within ±0.5% with the values of the respective bulk Co x Ni 100-x crystals, suggesting that the strain in the film is very small. High-resolution cross-sectional transmission microscopy shows that an atomically sharp boundary is formed between a Co(110) fcc film and a MgO(110) substrate, where periodical misfit dislocations are preferentially introduced in the film at the Co/MgO interface. The presence of such periodical misfit dislocations relieves the strain caused by the lattice mismatch between the film and the substrate.

Oxidation phase growth diagram of vanadium oxides film fabricated by rapid thermal annealing

Institute of Scientific and Technical Information of China (English)

Tamura KOZO; Zheng-cao LI; Yu-quan WANG; Jie NI; Yin HU; Zheng-jun ZHANG

2009-01-01

Thermal evaporation deposited vanadium oxide films were annealed in air by rapid thermal annealing (RTP). By adjusting the annealing temperature and time, a series of vanadium oxide films with various oxidation phases and surface morphologies were fabricated, and an oxidation phase growth diagram was established. It was observed that different oxidation phases appear at a limited and continuous annealing condition range, and the morphologic changes are related to the oxidation process.

Effects of Sb-doping on the grain growth of Cu(In, Ga)Se2 thin films fabricated by means of single-target sputtering

International Nuclear Information System (INIS)

Zhang, Shu; Wu, Lu; Yue, Ruoyu; Yan, Zongkai; Zhan, Haoran; Xiang, Yong

2013-01-01

To investigate the effects of Sb doping on the kinetics of grain growth in Cu(In,Ga)Se 2 (CIGS) thin films during annealing, CIGS thin films were sputtered onto Mo coated substrates from a single CIGS alloy target, followed by chemical bath deposition of Sb 2 S 3 thin layers on top of CIGS layers and subsequent annealing at different temperatures for 30 min in Se vapors. X-ray diffraction results showed that CIGS thin films were obtained directly using the single-target sputtering method. After annealing, the In/Ga ratio in Sb-doped CIGS thin films remained stable compared to undoped film, possibly because Sb can promote the incorporation of Ga into CIGS. The grain growth in CIGS thin films was enhanced after Sb doping, exhibiting significantly larger grains after annealing at 400 °C or 450 °C compared to films without Sb. In particular, the effect was strikingly significant in grain growth across the film thickness, resulting in columnar grain structure in Sb-doped films. This grain growth improvement may be led by the diffusion of Sb from the front surface to the CIGS-Mo back interface, which promoted the mass transport process in CIGS thin films. - Highlights: ► Cu(In,Ga)Se 2 (CIGS) thin films made by sputtering from a single CIGS target. ► Chemical bath deposition used to introduce antimony into CIGS absorber layers. ► In/Ga ratio decreases in Sb-doped annealed films, comparatively to undoped films. ► Sb-doped CIGS films are superior to undoped films in terms of grain-growth kinetics

Construction of Zn-incorporated multilayer films to promote osteoblasts growth and reduce bacterial adhesion

Energy Technology Data Exchange (ETDEWEB)

Liu, Peng, E-mail: liupeng79@cqu.edu.cn [Key Laboratory of Biorheological Science and Technology of Ministry of Education, College of Bioengineering, Chongqing University, Chongqing 400044 (China); State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science, Fudan University, Shanghai 200433 (China); Zhao, Yongchun; Yuan, Zhang [Key Laboratory of Biorheological Science and Technology of Ministry of Education, College of Bioengineering, Chongqing University, Chongqing 400044 (China); Ding, Hongyan [Jiangsu Provincial Key Laboratory for Interventional Medical Devices, Huaiyin Institute of Technology, Huaian, Jiangsu Province 223003 (China); Hu, Yan; Yang, Weihu [Key Laboratory of Biorheological Science and Technology of Ministry of Education, College of Bioengineering, Chongqing University, Chongqing 400044 (China); Cai, Kaiyong, E-mail: kaiyong_cai@cqu.edu.cn [Key Laboratory of Biorheological Science and Technology of Ministry of Education, College of Bioengineering, Chongqing University, Chongqing 400044 (China)

2017-06-01

To improve the biological performance of titanium substrates, a bioactive multilayered structure of chitosan/gelatin pair, containing zinc ions, was constructed via a layer-by-layer self-assembly technique. The successful preparation of zinc ions incorporated multilayer films was demonstrated by scanning electron microscopy, X-ray photoelectron spectroscopy, and contact angle measurements, respectively. The biological behaviors of osteoblasts adhered to modified Ti substrates were investigated in vitro via cytoskeleton observation, cell viability measurement, and alkaline phosphatase activity assay. The cytocompatibility evaluation verified that the present system was capable of promoting the growth of osteoblasts. In addition, Gram-positive (Staphylococcus aureus) and Gram-negative (Escherichia coli) bacteria were used to evaluate antibacterial property of modified Ti substrates. Bacterial adhesion and viability assay confirmed that Zn-loaded multilayer films were able to inhibit the adhesion and growth of bacteria. The approach presented here affords an alternative to reduce bacterial infection and promote osteoblast growth for titanium-based implants. - Highlights: • Polyelectrolyte multilayer films containing Zn ions were fabricated on Ti substrate. • Modified Ti substrate stimulated the biological responses of osteoblast. • Antibacterial property of Ti substrate was significantly improved. • The resulting material thus has potential application in orthopedic field.

Fecal Markers of Intestinal Inflammation and Permeability Associated with the Subsequent Acquisition of Linear Growth Deficits in Infants

Science.gov (United States)

Kosek, Margaret; Haque, Rashidul; Lima, Aldo; Babji, Sudhir; Shrestha, Sanjaya; Qureshi, Shahida; Amidou, Samie; Mduma, Estomih; Lee, Gwenyth; Yori, Pablo Peñataro; Guerrant, Richard L.; Bhutta, Zulfiqar; Mason, Carl; Kang, Gagandeep; Kabir, Mamun; Amour, Caroline; Bessong, Pascal; Turab, Ali; Seidman, Jessica; Olortegui, Maribel Paredes; Quetz, Josiane; Lang, Dennis; Gratz, Jean; Miller, Mark; Gottlieb, Michael

2013-01-01

Enteric infections are associated with linear growth failure in children. To quantify the association between intestinal inflammation and linear growth failure three commercially available enzyme-linked immunosorbent assays (neopterin [NEO], alpha-anti-trypsin [AAT], and myeloperoxidase [MPO]) were performed in a structured sampling of asymptomatic stool from children under longitudinal surveillance for diarrheal illness in eight countries. Samples from 537 children contributed 1,169 AAT, 916 MPO, and 954 NEO test results that were significantly associated with linear growth. When combined to form a disease activity score, children with the highest score grew 1.08 cm less than children with the lowest score over the 6-month period following the tests after controlling for the incidence of diarrheal disease. This set of affordable non-invasive tests delineates those at risk of linear growth failure and may be used for the improved assessments of interventions to optimize growth during a critical period of early childhood. PMID:23185075

In situ X-ray synchrotron study of organic semiconductor ultra-thin films growth

International Nuclear Information System (INIS)

Moulin, J.-F.; Dinelli, F.; Massi, M.; Albonetti, C.; Kshirsagar, R.; Biscarini, F.

2006-01-01

In this work we present an X-ray diffraction study of the early stages of growth of an organic semiconductor (sexithiophene, T 6 ) thin film prepared by high vacuum sublimation. Specular reflectometry and grazing incidence X-ray diffraction were used to monitor the formation of T 6 films on silicon oxide. Our results show that T 6 grows as a crystalline layer from the beginning of the evaporation. The reflectometry analysis suggests that, in the range of rates and temperatures studied, the growth is never layer by layer but rather 3D in nature. In-plane GIXD has allowed us to observe for the first time a thin film phase of T 6 formed of molecules standing normal to the substrate and arranged in a compressed unit cell with respect to the bulk, i.e. the unit cell parameters b and c are relatively smaller. We have followed the dynamics of formation of this new phase and identified the threshold of appearance of the bulk phase, which occurs above ∼5-6 monolayers. These results are relevant to the problem of organic thin film transistors, for which we have previously demonstrated experimentally that only the first two monolayers of T 6 films are involved in the electrical transport. The layers above the second one do not effectively contribute to charge mobility, either because they are more 'disordered' or because of a screening of the gate field

Preferential growth of short aligned, metallic-rich single-walled carbon nanotubes from perpendicular layered double hydroxide film.

Science.gov (United States)

Zhao, Meng-Qiang; Tian, Gui-Li; Zhang, Qiang; Huang, Jia-Qi; Nie, Jing-Qi; Wei, Fei

2012-04-07

Direct bulk growth of single-walled carbon nanotubes (SWCNTs) with required properties, such as diameter, length, and chirality, is the first step to realize their advanced applications in electrical and optical devices, transparent conductive films, and high-performance field-effect transistors. Preferential growth of short aligned, metallic-rich SWCNTs is a great challenge to the carbon nanotube community. We report the bulk preferential growth of short aligned SWCNTs from perpendicular Mo-containing FeMgAl layered double hydroxide (LDH) film by a facile thermal chemical vapor deposition with CH(4) as carbon source. The growth of the short aligned SWCNTs showed a decreased growth velocity with an initial value of 1.9 nm s(-1). Such a low growth velocity made it possible to get aligned SWCNTs shorter than 1 μm with a growth duration less than 15 min. Raman spectra with different excitation wavelengths indicated that the as-grown short aligned SWCNTs showed high selectivity of metallic SWCNTs. Various kinds of materials, such as mica, quartz, Cu foil, and carbon fiber, can serve as the substrates for the growth of perpendicular FeMoMgAl LDH films and also the growth of the short aligned SWCNTs subsequently. These findings highlight the easy route for bulk preferential growth of aligned metallic-rich SWCNTs with well defined length for further bulk characterization and applications. This journal is © The Royal Society of Chemistry 2012

Associations of infant feeding and timing of linear growth and relative weight gain during early life with childhood body composition

NARCIS (Netherlands)

de Beer, M.; Vrijkotte, T. G. M.; Fall, C. H. D.; van Eijsden, M.; Osmond, C.; Gemke, R. J. B. J.

2015-01-01

Growth and feeding during infancy have been associated with later life body mass index. However, the associations of infant feeding, linear growth and weight gain relative to linear growth with separate components of body composition remain unclear. Of 5551 children with collected growth and

A meta-analysis of cambium phenology and growth: linear and non-linear patterns in conifers of the northern hemisphere.

Science.gov (United States)

Rossi, Sergio; Anfodillo, Tommaso; Cufar, Katarina; Cuny, Henri E; Deslauriers, Annie; Fonti, Patrick; Frank, David; Gricar, Jozica; Gruber, Andreas; King, Gregory M; Krause, Cornelia; Morin, Hubert; Oberhuber, Walter; Prislan, Peter; Rathgeber, Cyrille B K

2013-12-01

Ongoing global warming has been implicated in shifting phenological patterns such as the timing and duration of the growing season across a wide variety of ecosystems. Linear models are routinely used to extrapolate these observed shifts in phenology into the future and to estimate changes in associated ecosystem properties such as net primary productivity. Yet, in nature, linear relationships may be special cases. Biological processes frequently follow more complex, non-linear patterns according to limiting factors that generate shifts and discontinuities, or contain thresholds beyond which responses change abruptly. This study investigates to what extent cambium phenology is associated with xylem growth and differentiation across conifer species of the northern hemisphere. Xylem cell production is compared with the periods of cambial activity and cell differentiation assessed on a weekly time scale on histological sections of cambium and wood tissue collected from the stems of nine species in Canada and Europe over 1-9 years per site from 1998 to 2011. The dynamics of xylogenesis were surprisingly homogeneous among conifer species, although dispersions from the average were obviously observed. Within the range analysed, the relationships between the phenological timings were linear, with several slopes showing values close to or not statistically different from 1. The relationships between the phenological timings and cell production were distinctly non-linear, and involved an exponential pattern. The trees adjust their phenological timings according to linear patterns. Thus, shifts of one phenological phase are associated with synchronous and comparable shifts of the successive phases. However, small increases in the duration of xylogenesis could correspond to a substantial increase in cell production. The findings suggest that the length of the growing season and the resulting amount of growth could respond differently to changes in environmental conditions.

STM and x-ray diffraction temperature-dependent growth study of SrRuO{sub 3} PLD thin films

Energy Technology Data Exchange (ETDEWEB)

Hawley, M.E.; Jia, Q.X.; Brown, G.W.

1996-12-31

SrRuO{sub 3} (SRO) has recently found a number of applications in different fields, e.g. as a buffer layer for the growth of high temperature superconductor (HTS) YBa{sub 2}Cu{sub 3}O{sub 7-x} films and as a bottom electrode for ferroelectric or high dielectric constant thin film capacitors and nonvolatile data storage. The growth of high crystallinity SRO films with good structural and electrical properties is the prerequisite for each of these applications. In this paper we describe the affect of one growth parameters temperature (T), on the crystalline quality, epitaxial substrate relationship and resulting electrical properties. SRO films were deposited on LaAlO{sub 3} single crystal substrates by pulsed laser deposition at substrate temperatures (T{sub s}) ranging from room temperature (RT) up to 800{degrees}C with a nominal film thickness of 150 nm range. The resulting films were characterized by x-ray diffraction, 4-point transport, and STM. The films` microstructures, as revealed by STM, evolved from polygranular at RT to a layered plate-like structure at higher deposition temperatures, T{sub s}, Increasing T{sub s} was marked first by increasing grain size, then a stronger orientational relationship between film and substrate, finally followed by the development of increased connectivity between grains to an extended island or condensed layered state. The transition from polygranular to layered structure occurred at T{sub s} > 650{degrees}C. Increased conductivity paralleled the changes in microstructure. The surfaces of all of the films were relatively smooth; the oriented films are suitable for use as conductive templates in multilayer structures.

Epitaxial Growth of Hard Ferrimagnetic Mn3Ge Film on Rhodium Buffer Layer

Directory of Open Access Journals (Sweden)

Atsushi Sugihara

2015-06-01

Full Text Available Mn\\(_3\\Ge has a tetragonal Heusler-like D0\\(_{22}\\ crystal structure, exhibiting a large uniaxial magnetic anisotropy and small saturation magnetization due to its ferrimagnetic spin structure; thus, it is a hard ferrimagnet. In this report, epitaxial growth of a Mn\\(_3\\Ge film on a Rh buffer layer was investigated for comparison with that of a film on a Cr buffer layer in terms of the lattice mismatch between Mn\\(_3\\Ge and the buffer layer. The film grown on Rh had much better crystalline quality than that grown on Cr, which can be attributed to the small lattice mismatch. Epitaxial films of Mn\\(_3\\Ge on Rh show somewhat small coercivity (\\(H_{\\rm c}\\ = 12.6 kOe and a large perpendicular magnetic anisotropy (\\(K_{\\rm u}\\ = 11.6 Merg/cm\\(^3\\, comparable to that of the film grown on Cr.

Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods

Energy Technology Data Exchange (ETDEWEB)

Nepal, Neeraj [U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375; Anderson, Virginia R. [American Society for Engineering Education, 1818 N Street NW, Washington, DC 20036; Johnson, Scooter D. [U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375; Downey, Brian P. [U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375; Meyer, David J. [U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375; DeMasi, Alexander [Physics Department, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215; Robinson, Zachary R. [Department of Physics, SUNY College at Brockport, 350 New Campus Dr, Brockport, New York 14420; Ludwig, Karl F. [Physics Department, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215; Eddy, Charles R. [U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375

2017-03-13

The temporal evolution of high quality indium nitride (InN) growth by plasma-assisted atomic layer epitaxy (ALEp) on a-plane sapphire at 200 and 248 °C was probed by synchrotron x-ray methods. The growth was carried out in a thin film growth facility installed at beamline X21 of the National Synchrotron Light Source at Brookhaven National Laboratory and at beamline G3 of the Cornell High Energy Synchrotron Source, Cornell University. Measurements of grazing incidence small angle x-ray scattering (GISAXS) during the initial cycles of growth revealed a broadening and scattering near the diffuse specular rod and the development of scattering intensities due to half unit cell thick nucleation islands in the Yoneda wing with correlation length scale of 7.1 and 8.2 nm, at growth temperatures (Tg) of 200 and 248 °C, respectively. At about 1.1 nm (two unit cells) of growth thickness nucleation islands coarsen, grow, and the intensity of correlated scattering peak increased at the correlation length scale of 8.0 and 8.7 nm for Tg = 200 and 248 °C, respectively. The correlated peaks at both growth temperatures can be fitted with a single peak Lorentzian function, which support single mode growth. Post-growth in situ x-ray reflectivity measurements indicate a growth rate of ~0.36 Å/cycle consistent with the growth rate previously reported for self-limited InN growth in a commercial ALEp reactor. Consistent with the in situ GISAXS study, ex situ atomic force microscopy power spectral density measurements also indicate single mode growth. Electrical characterization of the resulting film revealed an electron mobility of 50 cm2/V s for a 5.6 nm thick InN film on a-plane sapphire, which is higher than the previously reported mobility of much thicker InN films grown at higher temperature by molecular beam epitaxy directly on sapphire. These early results indicated that in situ synchrotron x-ray study of the epitaxial growth kinetics of InN films is a very powerful method to

Atomic control of substrate termination and heteroepitaxial growth of SrTiO sub 3 /LaAlO sub 3 films

CERN Document Server

Kim, D W; Choi, C; Lim, K D; Noh, T W; Lee, D R; Park, J H; Lee, K B

2000-01-01

The roles of substrate termination in the growth behaviors of SrTiO sub 3 (STO) films were investigated. With heat treatment and an atomic layer deposition technique, LaAlO sub 3 (LAO) substrates with two kinds of terminations, i.e., LaO- and AlO sub 2 -terminated ones, could be prepared. On top of them STO films were grown by using laser molecular beam epitaxy. In the case of the STO/LaO-LAO film, a transition from layer-by-layer growth to island growth was observed after growth of about 10 monolayers (ML). On the other hand, the STO/AlO sub 2 -LAO film could be grown in a layer-by-layer mode with a flat surface up to 40 ML. We suggest that defects induced by charge compensation influence the strain states and the physical properties of oxide heterostructures significantly.

Models of WO x films growth during pulsed laser deposition at elevated pressures of reactive gas

Science.gov (United States)

Gnedovets, A. G.; Fominski, V. Y.; Nevolin, V. N.; Romanov, R. I.; Fominski, D. V.; Soloviev, A. A.

2017-12-01

The films of tungsten oxides were prepared by pulsed laser ablation of W target in a reactive gas atmosphere (air of laboratory humidity). Optical analysis and ion signal measurements for the laser plume allowed to recognise a threshold gas pressure that suppresses the deposition of non-scattered atomic flux from the plume. When the pressure exceeds about 40 Pa, the films grow due to the deposition of species that could be formed in collisions of W atoms with reactive molecules (e.g., O2). Kinetic Monte Carlo method was used for modelling film growth. Comparison of the model structures with the experimentally prepared films has shown that the growth mechanism of ballistic deposition at a pressure of 40 Pa could be changed on the diffusion limited aggregation at a pressure of ~100 Pa. Thus, a cauliflower structure of the film transformed to a web-like structure. For good correlation of experimental and model structures of WO x , a dimension of structural elements in the model should coincide with W-O cluster size.

Growth dependent magnetization reversal in Co2MnAl full Heusler alloy thin films

Science.gov (United States)

Barwal, Vineet; Husain, Sajid; Behera, Nilamani; Goyat, Ekta; Chaudhary, Sujeet

2018-02-01

Angular dependent magnetization reversal has been investigated in Co2MnAl (CMA) full Heusler alloy thin films grown on Si(100) at different growth temperatures (Ts) by DC-magnetron sputtering. An M -shaped curve is observed in the in-plane angular (0°-360°) dependent coercivity (ADC) by magneto-optical Kerr effect measurements. The dependence of the magnetization reversal on Ts is investigated in detail to bring out the structure-property correlation with regards to ADC in these polycrystalline CMA thin films. This magnetization reversal ( M -shaped ADC behavior) is well described by the two-phase model, which is a combination of Kondorsky (domain wall motion) and Stoner Wohlfarth (coherent rotation) models. In this model, magnetization reversal starts with depinning of domain walls, with their gradual displacement explained by the Kondorsky model, and at a higher field (when the domain walls merge), the system follows coherent rotation before reaching its saturation following the Stoner Wohlfarth model. Further, the analysis of angular dependent squareness ratio (Mr/Ms) indicates that our films clearly exhibited twofold uniaxial anisotropy, which is related to self-steering effect arising due to the obliquely incident flux during the film-growth.

Epitaxial thin film growth and properties of unconventional oxide superconductors. Cuprates and cobaltates

International Nuclear Information System (INIS)

Krockenberger, Y.

2006-01-01

The discovery of high-temperature superconductors has strongly driven the development of suited thin film fabrication methods of complex oxides. One way is the adaptation of molecular beam epitaxy (MBE) for the growth of oxide materials. Another approach is the use of pulsed laser deposition (PLD) which has the advantage of good stoichiometry transfer from target to the substrate. Both techniques are used within this thesis. Epitaxial thin films of new materials are of course needed for future applications. In addition, the controlled synthesis of thin film matter which can be formed far away from thermal equilibrium allows for the investigation of fundamental physical materials properties. (orig.)

Epitaxial thin film growth and properties of unconventional oxide superconductors. Cuprates and cobaltates

Energy Technology Data Exchange (ETDEWEB)

Krockenberger, Y.

2006-07-01

The discovery of high-temperature superconductors has strongly driven the development of suited thin film fabrication methods of complex oxides. One way is the adaptation of molecular beam epitaxy (MBE) for the growth of oxide materials. Another approach is the use of pulsed laser deposition (PLD) which has the advantage of good stoichiometry transfer from target to the substrate. Both techniques are used within this thesis. Epitaxial thin films of new materials are of course needed for future applications. In addition, the controlled synthesis of thin film matter which can be formed far away from thermal equilibrium allows for the investigation of fundamental physical materials properties. (orig.)

Wafer bowing control of free-standing heteroepitaxial diamond (100) films grown on Ir(100) substrates via patterned nucleation growth

International Nuclear Information System (INIS)

Yoshikawa, Taro; Kodama, Hideyuki; Kono, Shozo; Suzuki, Kazuhiro; Sawabe, Atsuhito

2015-01-01

The potential of patterned nucleation growth (PNG) technique to control the wafer bowing of free-standing heteroepitaxial diamond films was investigated. The heteroepitaxial diamond (100) films were grown on an Ir(100) substrate via PNG technique with different patterns of nucleation regions (NRs), which were dot-arrays with 8 or 13 μm pitch aligned to < 100 > or < 110 > direction of the Ir(100) substrate. The wafer bows and the local stress distributions of the free-standing films were measured using a confocal micro-Raman spectrometer. For each NR pattern, the stress evolutions within the early stage of diamond growth were also studied together with a scanning electron microscopic observation of the coalescing diamond particles. These investigations revealed that the NR pattern, in terms of pitch and direction of dot-array, strongly affects the compressive stress on the nucleation side of the diamond film and dominantly contributes to the elastic deformation of the free-standing film. This indicates that the PNG technique with an appropriate NR pattern is a promising solution to fabricate free-standing heteroepitaxial diamond films with extremely small bows. - Highlights: • Wafer bowing control of free-standing heteroepitaxial diamond (100) films • Effect of patterned nucleation and growth (PNG) technique on wafer bowing reduction • Influence of nucleation region patterns of PNG on wafer bowing • Internal stress analysis of PNG films via confocal micro-Raman spectroscopy

Growth mechanisms and thickness effect on the properties of Al-doped ZnO thin films grown on polymeric substrates

Energy Technology Data Exchange (ETDEWEB)

Koidis, Christos; Logothetidis, Stergios; Kassavetis, Spiridon; Laskarakis, Argiris [Lab for Thin Films-Nanosystems and Nanometrology (LTFN), Physics Department, Aristotle University of Thessaloniki, 54124 Thessaloniki (Greece); Hastas, Nikolaos A.; Valassiades, Odisseas [Solid State Section, Physics Department, Aristotle University of Thessaloniki, 54124 Thessaloniki (Greece)

2010-07-15

The properties of Al-doped ZnO (AZO) thin films deposited by pulsed DC magnetron sputtering under various target power on polyethylene terephthalate (PET) substrates have been investigated. In situ and real-time spectroscopic ellipsometry (1.5-6.5 eV) has been employed to study the optical properties of the AZO films as well as the growth mechanisms taking place. With X-ray diffraction technique under grazing-incidence geometry, the structural characteristics profiles of the AZO films have been depicted. Nanoindentation measurements revealed information about the mechanical properties of the films and have been correlated to the conductivity measurements towards growth insights understanding. As results have shown, the increase of target power led to the increase of the carrier density as well as the hardness of the AZO films possibly both ascribed to dislocations induced. The stress during the deposition of AZO film under high target power favoured the island growth which is possibly both connected to the formation of defects as electron traps and dislocations as electron sources. Finally, the increase of AZO film thickness led to the increase of the resistivity possibly due to the enrichment of grain boundaries with defects as electron traps. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

The effect of chitosan and whey proteins-chitosan films on the growth of Penicillium expansum in apples.

Science.gov (United States)

Simonaitiene, Dovile; Brink, Ieva; Sipailiene, Ausra; Leskauskaite, Daiva

2015-05-01

Penicillium expansum causes a major post-harvest disease of apples. The aim of this study was to investigate the inhibition effect of chitosan and whey proteins-chitosan films containing different amounts of quince and cranberry juice against P. expansum on the simulation medium and on apples. The mechanical properties of films were also evaluated. The presence of cranberry and quince juice in the composition of chitosan and whey proteins-chitosan films caused a significant (P ≤ 0.05) increase in elasticity and decrease in tensile strength of films. Chitosan and whey proteins-chitosan films with quince and cranberry juice demonstrated a significant (P ≤ 0.05) inhibition effect against P. expansum growth on the simulated medium and apples. The presence of cranberry juice in the composition of chitosan and whey proteins-chitosan films resulted in a longer lag phase and a lower P. expansum growth rate on the simulation medium in comparison with films made with the addition of quince juice. These differences were not evident when experiment was conducted with apples. Addition of quince and cranberry juice to the chitosan and whey proteins-chitosan films as natural antifungal agents has some potential for prolonging the shelf life of apples. © 2014 Society of Chemical Industry.

A study of strain in thin epitaxial films of yttrium silicide on Si(111)

Science.gov (United States)

Siegal, Michelle F.; Martínez-Miranda, L. J.; Santiago-Avilés, J. J.; Graham, W. R.; Siegal, M. P.

1994-02-01

We present the results of an x-ray diffraction analysis of epitaxial yttrium silicide films grown on Si(111), with thicknesses ranging from 14 to 100 Å. The macroscopic strain along the out-of-plane direction for films containing pits or pinholes follows the trend observed previously in films of thicknesses up to 510 Å. The out-of-plane lattice parameter decreases linearly with film thickness. We show preliminary evidence that pinhole-free films do not follow the above trend, and that strain in these films has the opposite sign than in films with pinholes. Finally, our results also indicate that the mode of growth, coupled to the interfacial thermal properties of the films, affects the observed value for the strain in the films.

A study of strain in thin epitaxial films of yttrium silicide on Si(111)

International Nuclear Information System (INIS)

Siegal, M.F.; Martinez-Miranda, L.J.; Santiago-Aviles, J.J.; Graham, W.R.; Siegal, M.P.

1994-01-01

We present the results of an x-ray diffraction analysis of epitaxial yttrium silicide films grown on Si(111), with thicknesses ranging from 14 to 100 A. The macroscopic strain along the out-of-plane direction for films containing pits or pinholes follows the trend observed previously in films of thicknesses up to 510 A. The out-of-plane lattice parameter decreases linearly with film thickness. We show preliminary evidence that pinhole-free films do not follow the above trend, and that strain in these films has the opposite sign than in films with pinholes. Finally, our results also indicate that the mode of growth, coupled to the interfacial thermal properties of the films, affects the observed value for the strain in the films

Investigating the crystal growth behavior of biodegradable polymer blend thin films using in situ atomic force microscopy

CSIR Research Space (South Africa)

Malwela, T

2014-01-01

Full Text Available This article reports the crystal growth behavior of biodegradable polylactide (PLA)/poly[(butylene succinate)-co-adipate] (PBSA) blend thin films using atomic force microscopy (AFM). Currently, polymer thin films have received increased research...

Metal thin film growth on multimetallic surfaces: From quaternary metallic glass to binary crystal

Energy Technology Data Exchange (ETDEWEB)

Jing, Dapeng [Iowa State Univ., Ames, IA (United States)

2010-01-01

The work presented in this thesis mainly focuses on the nucleation and growth of metal thin films on multimetallic surfaces. First, we have investigated the Ag film growth on a bulk metallic glass surface. Next, we have examined the coarsening and decay of bilayer Ag islands on NiAl(110) surface. Third, we have investigated the Ag film growth on NiAl(110) surface using low-energy electron diffraction (LEED). At last, we have reported our investigation on the epitaxial growth of Ni on NiAl(110) surface. Some general conclusions can be drawn as follows. First, Ag, a bulk-crystalline material, initially forms a disordered wetting layer up to 4-5 monolayers on Zr-Ni-Cu-Al metallic glass. Above this coverage, crystalline 3D clusters grow, in parallel with the flatter regions. The cluster density increases with decreasing temperature, indicating that the conditions of island nucleation are far-from-equilibrium. Within a simple model where clusters nucleate whenever two mobile Ag adatoms meet, the temperature-dependence of cluster density yields a (reasonable) upper limit for the value of the Ag diffusion barrier on top of the Ag wetting layer of 0.32 eV. Overall, this prototypical study suggests that it is possible to grow films of a bulk-crystalline metal that adopt the amorphous character of a glassy metal substrate, if film thickness is sufficiently low. Next, the first study of coarsening and decay of bilayer islands has been presented. The system was Ag on NiAl(110) in the temperature range from 185 K to 250 K. The coarsening behavior, has some similarities to that seen in the Ag(110) homoepitaxial system studied by Morgenstern and co-workers. At 185 K and 205 K, coarsening of Ag islands follows a Smoluchowski ripening pathway. At 205 K and 250 K, the terrace diffusion limited Ostwald ripening dominants. The experimental observed temperature for the transition from SR to OR is 205 K. The SR exhibits anisotropic island diffusion and the OR exhibits 1D decay of island

Growth, structural, optical and electrical study of ZnS thin films deposited by solution growth technique (SGT)

International Nuclear Information System (INIS)

Sadekar, H.K.; Deshpande, N.G.; Gudage, Y.G.; Ghosh, A.; Chavhan, S.D.; Gosavi, S.R.; Sharma, Ramphal

2008-01-01

ZnS thin films have been deposited onto glass substrates at temperature 90 deg. C by solution growth technique (SGT). The deposition parameters were optimized. Triethanolamine (TEA) was used as a complexing agent for uniform deposition of the thin films. The elemental composition of the film was confirmed by energy dispersive analysis by X-ray (EDAX) technique. Structure and surface morphology of as-deposited films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM), atomic force microscopy (AFM), respectively. XRD patterns reveal that as-deposited thin films were amorphous in nature; while the obtained precipitate powder was polycrystalline in nature. SEM results revealed that deposited ZnS material has ∼120 ± 20 nm average grain size and the spherical grains are distributed over the entire glass substrate. Low surface roughness was found to be 2.7 nm from AFM studies. Transmission spectra indicate a high transmission coefficient (∼75%) with direct band gap energy equal to 3.72 eV while indirect band gap was found to be 3.45 eV. A photoluminescence (PL) study of the ZnS at room temperature (300 K) indicates a strong luminescence band at energy 2.02 eV

Centimetre-scale micropore alignment in oriented polycrystalline metal-organic framework films via heteroepitaxial growth.

Science.gov (United States)

Falcaro, Paolo; Okada, Kenji; Hara, Takaaki; Ikigaki, Ken; Tokudome, Yasuaki; Thornton, Aaron W; Hill, Anita J; Williams, Timothy; Doonan, Christian; Takahashi, Masahide

2017-03-01

The fabrication of oriented, crystalline films of metal-organic frameworks (MOFs) is a critical step toward their application to advanced technologies such as optics, microelectronics, microfluidics and sensing. However, the direct synthesis of MOF films with controlled crystalline orientation remains a significant challenge. Here we report a one-step approach, carried out under mild conditions, that exploits heteroepitaxial growth for the rapid fabrication of oriented polycrystalline MOF films on the centimetre scale. Our methodology employs crystalline copper hydroxide as a substrate and yields MOF films with oriented pore channels on scales that primarily depend on the dimensions of the substrate. To demonstrate that an anisotropic crystalline morphology can translate to a functional property, we assembled a centimetre-scale MOF film in the presence of a dye and showed that the optical response could be switched 'ON' or 'OFF' by simply rotating the film.

Growth, etching, and stability of sputtered ZnO:Al for thin-film silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Owen, Jorj Ian

2011-07-01

O:Al films can be increased up to 76 cm{sup 2}/Vs by annealing at high temperatures. Further, it is observed that this annealing process does not affect the morphology of the film and increases the total transmission in the solar cell relevant portion of the spectrum. Accelerated aging in a damp-heat is shown to affect the mobility primarily, and is thus likely related to poor transport across grain boundaries. Using deuterium as an isotopic marker, it is observed that the deuterium uptake was fairly linear with time and penetrated the whole film within 24 hours. Additionally, the deuterium is quickly replaced by hydrogen upon damp-heat treatment in water. It is concluded that the electrical degradation is related to the penetration of water via grain boundaries, and that the bulk of the reactions causing this degradation are fairly weak, such as the formation of zinc hydroxide. Additionally, the annealed high-mobility ZnO:Al films prove to be very stable in the damp-heat environment, exhibiting electron mobilities above 70 cm{sup 2}/Vs after 1000 hours of exposure. The initial points of attack during HCl etching of ZnO:Al, and the long-term etch evolution are shown to be related to certain grain boundaries built into the film during growth. The density of craters from an HCl etch is controllable by altering the temperature and concentration of the etching solution. It is further demonstrated that most acids exhibit etching behavior similar to that of HCl. Hydrofluoric acid (HF), however, exhibits unique etching characteristics with higher crater densities and sharper features. The crater density and shape are also shown to be controllable by etching in various concentrations of HF and in various mixtures of HF and HCl. Additional etching experiments are made to develop a polycrystalline ZnO:Al etching model. It is shown that basic and acidic solutions attack the same points on a polycrystalline ZnO:Al sample. The dependence of crater density on the acid concentration

Hydromagnetic thin film flow: Linear stability

KAUST Repository

Amaouche, Mustapha

2013-08-30

This paper deals with the long wave instability of an electroconductor fluid film, flowing down an inclined plane at small to moderate Reynolds numbers, under the action of electromagnetic fields. A coherent second order long wave model and two simplified versions of it, referred to as first and second reduced models (FRM and SRM), are proposed to describe the nonlinear behavior of the flow. The modeling procedure consists of a combination of the lubrication theory and the weighted residual approach using an appropriate projection basis. A suitable choice of weighting functions allows a significant reduction of the dimension of the problem. The full model is naturally unique, i.e., independent of the particular form of the trial functions. The linear stability of the problem is investigated, and the influence of electromagnetic field on the flow stability is analyzed. Two cases are considered: the applied magnetic field is either normal or parallel to the fluid flow direction, while the electric field is transversal. The numerical solution of the Orr-Sommerfeld (OS) eigenvalue problem and those of the depth averaging model are used to assess the accuracy of the reduced models. It is found that the current models have the advantage of the Benney-like model, which is known to asymptote the exact solution near criticality. Moreover, far from the instability threshold, the current reduced models continue to follow the OS solution up to moderate Reynolds numbers, while the averaging model diverges rapidly. The model SRM gives better results than FRM beyond sufficiently high Reynolds numbers.

Direct observation of atomic-level nucleation and growth processes from an ultrathin metallic glass films

Energy Technology Data Exchange (ETDEWEB)

Huang, K. Q.; Cao, C. R.; Sun, Y. T.; Li, J.; Bai, H. Y.; Zheng, D. N., E-mail: l.gu@iphy.ac.cn, E-mail: dzheng@iphy.ac.cn, E-mail: whw@iphy.ac.cn; Wang, W. H., E-mail: l.gu@iphy.ac.cn, E-mail: dzheng@iphy.ac.cn, E-mail: whw@iphy.ac.cn [Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Gu, L., E-mail: l.gu@iphy.ac.cn, E-mail: dzheng@iphy.ac.cn, E-mail: whw@iphy.ac.cn [Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Collaborative Innovation Center of Quantum Matter, Beijing 100190 (China)

2016-01-07

Till date, there have been no direct atomic-level experimental observations of the earliest stages of the nucleation and growth processes of nanocrystals formed by thermally induced crystallization in ultrathin metallic glasses (MGs). Here, we present a study of the crystallization process in atomically thin and highly stable MG films using double spherical aberration-corrected scanning transmission electron microscopy (Cs-TEM). Taking advantage of the stability of MG films with a slow crystallization process and the atomic-level high resolution of Cs-TEM, we observe the formation of the nucleus precursor of nanocrystals formed by atom aggregation followed by concomitant coalescence and stepwise evolution of the shape of the nanocrystals with a monodispersed and separated bimodal size distribution. Molecular dynamics simulation of the atomic motion in the glass film on a rigid amorphous substrate confirms the stepwise evolution processes of atom aggregation, cluster formation, cluster movement on the substrate, and cluster coalescence into larger crystalline particles. Our results might provide a better fundamental understanding of the nucleation and growth processes of nanocrystals in thin MG films.

Influence of argon dilution on growth and properties of hydrogenated nanocrystalline silicon films

Energy Technology Data Exchange (ETDEWEB)

Parashar, A. [Plasma Processed Materials Group, National Physical Laboratory (CSIR), Dr. K.S. Krishnan Road, New Delhi 110012 (India); Department of Physics and Astro Physics, University of Delhi, Delhi 110007 (India); Kumar, Sushil; Gope, Jhuma; Rauthan, C.M.S.; Dixit, P.N. [Plasma Processed Materials Group, National Physical Laboratory (CSIR), Dr. K.S. Krishnan Road, New Delhi 110012 (India); Hashmi, S.A. [Department of Physics and Astro Physics, University of Delhi, Delhi 110007 (India)

2010-05-15

The effect of argon concentration (66-87%) in total gaseous mixture (SiH{sub 4}+H{sub 2}+Ar) on growth and properties of hydrogenated nanocrystalline silicon films deposited by RF (13.56 MHz) PECVD technique was investigated. Raman and XRD measurements revealed increasing argon fraction favored enhancement of crystallinity, enlargement of crystallites and relaxation of strained bonds. Photoluminescence spectra of nc-Si:H films exhibited two radiative transitions in the photon energy ranges of 2.8-3.1 eV and 1.6-2.1 eV. The high energy PL peaks are attributed to surface effect of the films whereas peaks in the range of 1.6-2.1 eV are due to nanocrystallinity in the films. Argon dilution also helped enhancement of deposition rate and conductivity of the films. A film deposited at 81% of argon fraction possesses high crystallinity (75%), conductivity in the order of 10{sup -5} ({omega} cm){sup -1}, size of the crystallite (Raman=12 nm, XRD=18 nm), and low residual stress (125 MPa). (author)

Growth and thermal oxidation of Ru and ZrO2 thin films as oxidation protective layers

NARCIS (Netherlands)

Coloma Ribera, R.

2017-01-01

This thesis focuses on the study of physical and chemical processes occurring during growth and thermal oxidation of Ru and ZrO2 thin films. Acting as oxidation resistant capping materials to prevent oxidation of layers underneath, these films have several applications, i.e., in microelectronics

Texture of the nano-crystalline AlN thin films and the growth conditions in DC magnetron sputtering

Directory of Open Access Journals (Sweden)

Shakil Khan

2015-08-01

Full Text Available DC reactive magnetron sputtering technique has been used for the preparation of AlN thin films. The deposition temperature and the flow ratio of N2/Ar were varied and subsequent dependency of the films crystallites orientation/texture has been addressed. In general, deposited films were found hexagonal polycrystalline with a (002 preferred orientation. The X-ray diffraction (XRD data revealed that the film crystallinity improves, with the increase of substrate temperature from 300 °C to 500 °C. The dropped in full width half maximum (FWHM of the XRD rocking curve value further confirmed it. However, increasing substrate temperature above 500 °C or reducing the nitrogen condition (from 60 to 30% in the environment induced the growth of crystallites with (102 and (103 orientations. The rise of rocking curve FWHM for the corresponding conditions depicted that the films texture quality deteriorated. A further confirmation of the variation in film texture/orentation with the growth conditions has been obtained from the variation in FWHM values of a dominant E1 (TO mode in the Fourier transform infrared (FTIR spectra and the E2 (high mode in Raman spectra. We have correlated the columnar structure in AFM surface analyses with the (002 or c-axis orientation as well. Spectroscopic ellipsometry of the samples have shown a higher refractive index at 500 °C growth temperature.

Linear Growth and Child Development in Burkina Faso, Ghana, and Malawi.

Science.gov (United States)

Prado, Elizabeth L; Abbeddou, Souheila; Adu-Afarwuah, Seth; Arimond, Mary; Ashorn, Per; Ashorn, Ulla; Brown, Kenneth H; Hess, Sonja Y; Lartey, Anna; Maleta, Kenneth; Ocansey, Eugenia; Ouédraogo, Jean-Bosco; Phuka, John; Somé, Jérôme W; Vosti, Steve A; Yakes Jimenez, Elizabeth; Dewey, Kathryn G

2016-08-01

We aimed to produce quantitative estimates of the associations between 4 domains of child development and linear growth during 3 periods: before birth, early infancy, and later infancy. We also aimed to determine whether several factors attenuated these associations. In 3700 children in Burkina Faso, Ghana, and Malawi, growth was measured several times from birth to age 18 months. At 18 months, language, motor, socioemotional, and executive function development were assessed. In Burkina Faso (n = 1111), personal-social development was assessed rather than the latter 2 domains. Linear growth was significantly associated with language, motor, and personal-social development but not socioemotional development or executive function. For language, the pooled adjusted estimate of the association with length-for-age z score (LAZ) at 6 months was 0.13 ± 0.02 SD, and with ΔLAZ from 6 to 18 months it was 0.11 ± 0.03 SD. For motor, these estimates were 0.16 ± 0.02 SD and 0.22 ± 0.03 SD, respectively. In 1412 children measured at birth, estimates of the association with LAZ at birth were similar (0.07-0.16 SD for language and 0.09-0.18 SD for motor development). These associations were weaker or absent in certain subsets of children with high levels of developmental stimulation or mothers who received nutritional supplementation. Growth faltering during any period from before birth to 18 months is associated with poor development of language and motor skills. Interventions to provide developmental stimulation or maternal supplementation may protect children who are faltering in growth from poor language and motor development. Copyright © 2016 by the American Academy of Pediatrics.

Influence of substrate temperature, growth rate and TCO substrate on the properties of CSS deposited CdS thin films

Energy Technology Data Exchange (ETDEWEB)

Schaffner, J., E-mail: jschaffner@surface.tu-darmstadt.de; Feldmeier, E.; Swirschuk, A.; Schimper, H.-J.; Klein, A.; Jaegermann, W.

2011-08-31

The growth of CdS thin films by close space sublimation (CSS) has been systematically studied using an ultra-high vacuum system known as DAISY-SOL in order to understand the basic growth mechanisms and their impact on the film properties. Substrate temperature and deposition rate were varied, and the surface properties of the CdS layer were determined by photoelectron spectroscopy (XPS) without breaking the vacuum. To analyze the influence of the deposition conditions on the layer morphology and crystallographic structure, the films were further characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The SEM and AFM studies show a correlation between the deposition rate and the film morphology. For high deposition rates, edged grain shapes and smoother surfaces were observed than for low deposition rates. CdS films were deposited onto two different commercially available fluorine-doped tin oxide (FTO) substrates. XRD studies show that a high <200> texture of the FTO substrate prefers the CdS growth in <0001> orientation of the hexagonal crystal modification.

Effect of growth interruption on the crystalline quality and electrical properties of Ga-doped ZnO thin film deposited on quartz substrate by magnetron sputtering

International Nuclear Information System (INIS)

Lee, Geun-Hyoung

2013-01-01

Ga-doped ZnO(GZO) thin films were deposited on the quartz substrate by magnetron sputtering system with growth interruption technique. As the number of interruptions and interruption time increased, the carrier concentration and Hall mobility in GZO films significantly increased. As a result, the resistivity of GZO films decreased. The optical transmittance of GZO films also increased with the number of interruption and interruption time. The transmittance showed over 90% in visual region. Atomic force microscopy measurement showed that the film surface became smoother with an increase of the number of interruption. In addition, the crystalline quality and electrical properties of GZO films were more improved when the growth interruption was employed with a temperature gradient. - Highlights: • Ga-doped ZnO thin films were deposited with growth interruption technique. • The crystallinity of the films was improved with the number of interruptions. • The crystallinity of the films was improved as the interruption time increased. • The growth interruption with a temperature gradient more improved the film quality

Observation of feature ripening inversion effect at the percolation threshold for the growth of thin silver films

Energy Technology Data Exchange (ETDEWEB)

Nehm, Frederik, E-mail: frederik.nehm@iapp.de; Schubert, Sylvio; Müller-Meskamp, Lars; Leo, Karl

2014-04-01

The growth behavior of thin silver films on organic layers is investigated during deposition by means of simultaneous in-situ monitoring of sheet resistance and transmittance. Thermally evaporated films up to 11 nm show a distinct percolation behavior with strong resistance drop at the percolation thickness. Additionally, evaporations are divided into a sequence of one nanometer steps. In the deposition breaks, the films exhibit a ripening effect with an inversion at the percolation thickness, by changing from an increasing to decreasing sheet resistance over time. Scanning electron micrographs suggest same ripening mechanisms for islands below the percolation thickness as for holes above. - Highlights: • Fundamental understanding of metal thin film growth is presented. • Optical and electrical in-situ measurements used for optimizing transparent electrodes • Stepwise Ag deposition reveals extraordinary ripening effects. • Feature ripening inversion is discovered at the percolation threshold.

Observation of feature ripening inversion effect at the percolation threshold for the growth of thin silver films

International Nuclear Information System (INIS)

Nehm, Frederik; Schubert, Sylvio; Müller-Meskamp, Lars; Leo, Karl

2014-01-01

The growth behavior of thin silver films on organic layers is investigated during deposition by means of simultaneous in-situ monitoring of sheet resistance and transmittance. Thermally evaporated films up to 11 nm show a distinct percolation behavior with strong resistance drop at the percolation thickness. Additionally, evaporations are divided into a sequence of one nanometer steps. In the deposition breaks, the films exhibit a ripening effect with an inversion at the percolation thickness, by changing from an increasing to decreasing sheet resistance over time. Scanning electron micrographs suggest same ripening mechanisms for islands below the percolation thickness as for holes above. - Highlights: • Fundamental understanding of metal thin film growth is presented. • Optical and electrical in-situ measurements used for optimizing transparent electrodes • Stepwise Ag deposition reveals extraordinary ripening effects. • Feature ripening inversion is discovered at the percolation threshold

Diffusivity, solubility and thermodynamic modelling of diffusion growth of Ga"3"+-doped LiTaO_3 thin film for integrated optics

International Nuclear Information System (INIS)

Zhang, De-Long; Zhang, Qun; Zhang, Pei; Kang, Jian; Wong, Wing-Han; Yu, Dao-Yin

2016-01-01

Graphical abstract: Diffusion growth of Ga"3"+-doped LiTaO_3(LT) thin film was studied thermodynamically. Some Ga"3"+-doped LT thin films were grown on LT surface by in-diffusion of homogeneously coated Ga_2O_3 film at the temperature range of (1273 to 1473) K. The Ga"3"+ profile in the grown thin film was analyzed by secondary ion mass spectrometry. Form the measured Ga"3"+ profiles, some thermodynamic parameters were obtained. These include diffusivity, diffusion constant, chemical activation energy, solubility, solubility constant and enthalpy of solution. These parameters are crucial to design and growth of a Ga"3"+-doped LT thin film with desired Ga"3"+ profile for integrated optics application. A thermodynamic model is suggested for the growth and verified experimentally. - Highlights: • Diffusion growth of Ga"3"+-doped LiTaO_3 thin film were studied thermodynamically. • Diffusion constant is 1.41 · 10"−"6 m"2/s and activation energy is 237.2 kJ/mol. • Solubility constant is 22.9 · 10"2"6 ions/m"3 and enthalpy of solution is 28.9 kJ/mol. • Ga"3"+ dopant has small effect on LiTaO_3 refractive index. • Ga"3"+ growth can be described by a Fick-type equation with a constant diffusivity. - Abstract: A thermodynamic study was performed on diffusion growth of Ga"3"+-doped LiTaO_3(LT) thin film for integrated optics. Some Ga"3"+-doped LT thin films were grown on LT surface by in-diffusion of homogeneously coated Ga_2O_3 film at the temperature range of (1273 to 1473) K. After growth, the refractive indices at Ga"3"+-doped and un-doped surface parts were measured by prism coupling technique and Li composition there was evaluated from the measured refractive indices. The results show that Ga"3"+ dopant has small effect on the LT index. Li_2O out-diffusion is not measurable. The Ga"3"+ profile in the grown thin film was analysed by secondary ion mass spectrometry. It is found that the grown Ga"3"+ ions follow a complementary error function profile. A

EuO and Gd-doped EuO thin films. Epitaxial growth and properties

International Nuclear Information System (INIS)

Sutarto, Ronny

2009-01-01

quality of many of the doped EuO samples used in the past bulk studies. The focus of this thesis is on the preparation and the properties of high-quality single-crystalline EuO and Gd-doped EuO thin films. The so-called Eu-distillation-assisted molecular beam epitaxy (MBE) has been employed to achieve full control of the stoichiometry. The films have been epitaxially grown on yttria-stabilized cubic zirconia (YSZ) (001) substrates. By a systematic variation of the oxygen deposition rates, we have been able to observe sustained oscillations in the intensity of the reflection high-electron energy diffraction (RHEED) pattern during growth. We thus have demonstrated that layer-by-layer growth has been achieved for the first time. We also have confirmed that YSZ indeed supplies oxygen during the initial stages of growth, yet the EuO stoichiometry can still be well maintained. In the case of Gd-doped EuO films, the presence of Gd even helps to stabilize the layer-by-layer growth mode. It is important to achieve this growth mode, since it enables the preparation of films with very smooth and at surfaces. This in turn facilitates the capping of the films with a thin Al overlayer in order to protect the films against degradation under ambient conditions. More important, the smoothness of the lm will enable the preparation of high quality device structures. By using ex-situ soft x-ray absorption spectroscopy (XAS) at the Eu and Gd M 4,5 edges, we have confirmed that the films are completely free from Eu 3+ contaminants, and we were able to determine reliably the actual Gd concentration. This actual Gd concentration could in fact significantly deviate from the nominal Gd/Eu evaporation ratio. From magnetization and susceptibility measurements, we found the Curie temperature to increase smoothly as a function of doping from 69 K up to a maximum of 125 K, all with a saturation moment of 7 μB. A threshold behavior was not observed for Gd concentrations as low as 0.2 %. Analysis of the

EuO and Gd-doped EuO thin films. Epitaxial growth and properties

Energy Technology Data Exchange (ETDEWEB)

Sutarto, Ronny

2009-07-06

this respect the quality of many of the doped EuO samples used in the past bulk studies. The focus of this thesis is on the preparation and the properties of high-quality single-crystalline EuO and Gd-doped EuO thin films. The so-called Eu-distillation-assisted molecular beam epitaxy (MBE) has been employed to achieve full control of the stoichiometry. The films have been epitaxially grown on yttria-stabilized cubic zirconia (YSZ) (001) substrates. By a systematic variation of the oxygen deposition rates, we have been able to observe sustained oscillations in the intensity of the reflection high-electron energy diffraction (RHEED) pattern during growth. We thus have demonstrated that layer-by-layer growth has been achieved for the first time. We also have confirmed that YSZ indeed supplies oxygen during the initial stages of growth, yet the EuO stoichiometry can still be well maintained. In the case of Gd-doped EuO films, the presence of Gd even helps to stabilize the layer-by-layer growth mode. It is important to achieve this growth mode, since it enables the preparation of films with very smooth and at surfaces. This in turn facilitates the capping of the films with a thin Al overlayer in order to protect the films against degradation under ambient conditions. More important, the smoothness of the lm will enable the preparation of high quality device structures. By using ex-situ soft x-ray absorption spectroscopy (XAS) at the Eu and Gd M{sub 4,5} edges, we have confirmed that the films are completely free from Eu{sup 3+} contaminants, and we were able to determine reliably the actual Gd concentration. This actual Gd concentration could in fact significantly deviate from the nominal Gd/Eu evaporation ratio. From magnetization and susceptibility measurements, we found the Curie temperature to increase smoothly as a function of doping from 69 K up to a maximum of 125 K, all with a saturation moment of 7 {mu}B. A threshold behavior was not observed for Gd concentrations

Piezoelectric actuated micro-resonators based on the growth of diamond on aluminum nitride thin films

International Nuclear Information System (INIS)

Hees, J; Heidrich, N; Pletschen, W; Sah, R E; Wolfer, M; Lebedev, V; Nebel, C E; Ambacher, O; Williams, O A

2013-01-01

Unimorph heterostructures based on piezoelectric aluminum nitride (AlN) and diamond thin films are highly desirable for applications in micro- and nanoelectromechanical systems. In this paper, we present a new approach to combine thin conductive boron-doped as well as insulating nanocrystalline diamond (NCD) with sputtered AlN films without the need for any buffer layers between AlN and NCD or polishing steps. The zeta potentials of differently treated nanodiamond (ND) particles in aqueous colloids are adjusted to the zeta potential of AlN in water. Thereby, the nucleation density for the initial growth of diamond on AlN can be varied from very low (10 8 cm −2 ), in the case of hydrogen-treated ND seeding particles, to very high values of 10 11 cm −2 for oxidized ND particles. Our approach yielding high nucleation densities allows the growth of very thin NCD films on AlN with thicknesses as low as 40 nm for applications such as microelectromechanical beam resonators. Fabricated piezo-actuated micro-resonators exhibit enhanced mechanical properties due to the incorporation of boron-doped NCD films. Highly boron-doped NCD thin films which replace the metal top electrode offer Young’s moduli of more than 1000 GPa. (paper)

Growth temperature dependence of flux pinning properties in ErBa2Cu3Oy thin films with nano-rods

International Nuclear Information System (INIS)

Haruta, M.; Sueyoshi, T.; Fujiyoshi, T.; Mukaida, M.; Kai, H.; Matsumoto, K.; Mele, P.; Maeda, T.; Horii, S.

2011-01-01

Nano-rods were introduced into ErBa 2 Cu 3 O y thin films to improve J c . Pinning properties depended on the growth temperature of the films. Morphology of nano-rods was affected by the growth temperature. The growth temperature is important to achieve high in-field J c 's. Irreversibility lines and distributions of local critical current density (J cl ) based on the percolation transition model were affected by the growth temperature (T s ) in 3.5 wt.%-BaNb 2 O 6 -doped ErBa 2 Cu 3 O y thin films. The vortex-Bose-glass-like state appeared by the introduction of nano-rods, and this vortex state was affected by T s . The shape and width of the J cl distribution strongly depended on T s . These results are probably caused by variations of the density and the growth direction for nano-rods reflecting T s . The growth temperature is an important factor to achieve higher critical current properties under magnetic fields for coated conductors of rare-earth-based cuprates with nano-rods.

Buffer Film Assisted Growth of Dense MWCNTs on Copper Foils for Flexible Electrochemical Applications

Directory of Open Access Journals (Sweden)

Udomdej Pakdee

2017-01-01

Full Text Available The novel Inconel buffer films were prepared on copper foils using unbalance direct current (DC magnetron sputtering. These films were employed as buffer layers for supporting the dense growth of multiwalled carbon nanotubes (MWCNTs. Thermal chemical vapor deposition (CVD with metal alloys such as stainless steel (SS type 304 films was considered to synthesize MWCNTs. To understand the effectiveness of these buffer films, the MWCNTs grown on buffer-free layer were carried out as a comparison. The main problem such as the diffusion of catalysts into the oxide layer of metal substrate during the CVD process was solved together with a creation of good electrical contact between substrate and nanotubes. The morphologies, crystallinities, and electrochemical behaviors of MWCNTs grown on Inconel buffer films with 304 SS catalysts revealed the better results for applying in flexible electrochemical applications.

Effect of Substrate Morphology on Growth and Field Emission Properties of Carbon Nanotube Films

Directory of Open Access Journals (Sweden)

Kumar Vikram

2008-01-01

Full Text Available AbstractCarbon nanotube (CNT films were grown by microwave plasma-enhanced chemical vapor deposition process on four types of Si substrates: (i mirror polished, (ii catalyst patterned, (iii mechanically polished having pits of varying size and shape, and (iv electrochemically etched. Iron thin film was used as catalytic material and acetylene and ammonia as the precursors. Morphological and structural characteristics of the films were investigated by scanning and transmission electron microscopes, respectively. CNT films of different morphology such as vertically aligned, randomly oriented flowers, or honey-comb like, depending on the morphology of the Si substrates, were obtained. CNTs had sharp tip and bamboo-like internal structure irrespective of growth morphology of the films. Comparative field emission measurements showed that patterned CNT films and that with randomly oriented morphology had superior emission characteristics with threshold field as low as ~2.0 V/μm. The defective (bamboo-structure structures of CNTs have been suggested for the enhanced emission performance of randomly oriented nanotube samples.

Associations of infant feeding and timing of linear growth and relative weight gain during early life with childhood body composition

NARCIS (Netherlands)

de Beer, M.; Vrijkotte, T.G.M.; Fall, C.H.D.; Eijsden, M.; Osmond, C.; Gemke, R.J.B.J.

2015-01-01

Background:Growth and feeding during infancy have been associated with later life body mass index. However, the associations of infant feeding, linear growth and weight gain relative to linear growth with separate components of body composition remain unclear.Methods:Of 5551 children with collected

Growth of TiC films by Pulsed Laser Evaporation (PLE) and characterization by XPS and AES

International Nuclear Information System (INIS)

Rist, O.; Murray, P.T.

1991-01-01

Thin films of TiC with a thickness of some 100 nm have been grown on Si(100) substrates by Pulsed Laser Evaporation (PLE). Advantages of PLE in comparison with more conventional growth methods e.g. PVD or CVD are reported. The feasibility of growing stoichiometric thin films of TiC by PLE was investigated. These films produced have been analysed in situ by X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). XPS results and Auger sputter depht profiles indicate that the films grown between RT and 500degC are stoichiometric TiC. Film/substrate interdiffusion is observed at 600degC substrate temperature and higher. (orig.)

Epitaxial growth of cubic Gd{sub 2}O{sub 3} thin films on Ge substrates

Energy Technology Data Exchange (ETDEWEB)

Molle, A; Wiemer, C; Bhuiyan, M D N K; Tallarida, G; Fanciulli, M [CNR-INFM, Laboratorio Nazionale MDM, via C. Olivetti 2, I-20041 Agrate Brianza (Italy)], E-mail: alessandro.molle@mdm.infm.it

2008-03-15

Gd{sub 2}O{sub 3} thin films were grown on Ge (001) substrates by molecular beam epitaxy. The epitaxial character of the film is demonstrated by electron diffraction during the growth. The structural characterization of the films shows that the Gd{sub 2}O{sub 3} forms a bixbyite polymorph with a (110) out-of-plane orientation. The formation of bixbyite structured Gd{sub 2}O{sub 3} is discussed in terms of the atomic arrangement of the oxide planes on the Ge(001) surface.

Testing and linearity calibration of films of phenol compounds exposed to thermal neutron field for EPR dosimetry.

Science.gov (United States)

Gallo, S; Panzeca, S; Longo, A; Altieri, S; Bentivoglio, A; Dondi, D; Marconi, R P; Protti, N; Zeffiro, A; Marrale, M

2015-12-01

This paper reports the preliminary results obtained by Electron Paramagnetic Resonance (EPR) measurements on films of IRGANOX® 1076 phenols with and without low content (5% by weight) of gadolinium oxide (Gd2O3) exposed in the thermal column of the Triga Mark II reactor of LENA (Laboratorio Energia Nucleare Applicata) of Pavia (Italy). Thanks to their size, the phenolic films here presented are good devices for the dosimetry of beams with high dose gradient and which require accurate knowledge of the precise dose delivered. The dependence of EPR signal as function of neutron dose was investigated in the fluence range between 10(11) cm(-2) and 10(14) cm(-2). Linearity of EPR response was found and the signal was compared with that of commercial alanine films. Our analysis showed that gadolinium oxide (5% by weight) can enhance the thermal neutron sensitivity more than 18 times. Irradiated dosimetric films of phenolic compound exhibited EPR signal fading of about 4% after 10 days from irradiation. Copyright © 2015 Elsevier Ltd. All rights reserved.

Smooth Growth of Organic Semiconductor Films on Graphene for High-Efficiency Electronics

NARCIS (Netherlands)

Hlawacek, G.; Khokhar, F.S.; van Gastel, Raoul; Poelsema, Bene; Teichert, Christian

2011-01-01

High-quality thin films of conjugated molecules with smooth interfaces are important to assist the advent of organic electronics. Here, we report on the layer-by-layer growth of the organic semiconductor molecule p-sexiphenyl (6P) on the transparent electrode material graphene. Low energy electron

The growth and evolution of thin oxide films on delta-plutonium surfaces

Energy Technology Data Exchange (ETDEWEB)

Garcia Flores, Harry G [Los Alamos National Laboratory; Pugmire, David L [Los Alamos National Laboratory

2009-01-01

The common oxides of plutonium are the dioxide (PuO{sub 2}) and the sesquioxide (Pu{sub 2}O{sub 3}). The structure of an oxide on plutonium metal under air at room temperature is typically described as a thick PuO{sub 2} film at the gas-oxide interface with a thinner PuO{sub 2} film near the oxide-metal substrate interface. In a reducing environment, such as ultra high vacuum, the dioxide (Pu{sup 4+}; O/Pu = 2.0) readily converts to the sesquioxide (Pu{sup 3+}; O/Pu = 1.5) with time. In this work, the growth and evolution of thin plutonium oxide films is studied with x-ray photoelectron spectroscopy (XPS) under varying conditions. The results indicate that, like the dioxide, the sesquioxide is not stable on a very clean metal substrate under reducing conditions, resulting in substoichiometric films (Pu{sub 2}O{sub 3-y}). The Pu{sub 2}O{sub 3-y} films prepared exhibit a variety of stoichiometries (y = 0.2-1) as a function of preparation conditions, highlighting the fact that caution must be exercised when studying plutonium oxide surfaces under these conditions and interpreting resulting data.

AES study of growth process of al thin films on uranium dioxide

International Nuclear Information System (INIS)

Zhou Wei; Liu Kezhao; Yang Jiangrong; Xiao Hong

2009-01-01

Metallic uranium was exposed to 40 languirs of oxygen at room temperature in order to form UO 2 on the surface of metallic U. And thin layers of aluminum on UO 2 were prepared by sputter deposition under ultra high vacuum conditions. Process of Al thin film growth and its interaction with UO 2 were investigated by auger electron spectroscopy (AES) and electron energy loss spectroscopy (EELS). It was shown that the Al thin film growth underwent via the Volmer-Weber (VW) mode. At room temperature, Al and UO 2 interact with each other, electrons transfer occurres from Al atoms to uranium ions, and a few of Al 2 O 3 exist in the region of UO 2 /Al interface due to O 2 adsorption to the surface. Inter-diffusion between UO 2 and Al is observable. Aluminum diffuses into interface region of UO 2 and U. It results in the formation of a coexistence regime containing uranium oxide, metallic U and Al. (authors)

Decoding Nucleation and Growth of Zeolitic Imidazolate Framework Thin Films with Atomic Force Microscopy and Vibrational Spectroscopy

NARCIS (Netherlands)

Ozturk, Zafer; Filez, Matthias; Weckhuysen, Bert M.

2017-01-01

The synthesis of metal-organic framework (MOF) thin films has garnered significant attention during the past decade. By better understanding the parameters governing the nucleation and growth of such thin films, their properties can be rationally tuned, empowering their application as (reactive)

Order-disorder criticality, wetting, and morphological phase transitions in the irreversible growth of far-from-equilibrium magnetic films

International Nuclear Information System (INIS)

Candia, J.Julian; Albano, E.V.Ezequiel V.

2003-01-01

An exhaustive numerical investigation of the growth of magnetic films in confined (d+1)-dimensional stripped geometries (d=1,2) is carried out by means of extensive Monte Carlo simulations. Films in contact with a thermal bath at temperature T, are grown by adding spins having two possible orientations and considering ferromagnetic (nearest-neighbor) interactions. At low temperatures, thin films of thickness L are constituted by a sequence of well-ordered domains of average length l D >>L. These domains have opposite magnetization. So, the films exhibit 'spontaneous magnetization reversal' during the growth process. Such reversal occurs within a short characteristic length l R , such that l D >>l R ∼L. Furthermore, it is found that for d=1 the system is non-critical, while a continuous order-disorder phase transition at finite temperature takes place in the d=2 case. Using standard finite-size scaling procedures, the critical temperature and some relevant critical exponents are determined. Finally, the growth of magnetic films in (2+1) dimensions with competing short-range magnetic fields acting along the confinement walls is studied. Due to the antisymmetric condition considered, an interface between domains with spins having opposite orientation develops along the growing direction. Such an interface undergoes a localization-delocalization transition that is the precursor of a wetting transition in the thermodynamic limit. Furthermore, the growing interface also undergoes morphological transitions in the growth mode. A comparison between the well-studied equilibrium Ising model and the studied irreversible magnetic growth model is performed throughout. Although valuable analogies are encountered, it is found that the non-equilibrium nature of the latter introduces new and rich physical features of interest

Ground Based Experiments in Support of Microgravity Research Results-Vapor Growth of Organic Nonlinear Optical Thin Film

Science.gov (United States)

Zugrav, M. Ittu; Carswell, William E.; Haulenbeek, Glen B.; Wessling, Francis C.

2001-01-01

This work is specifically focused on explaining previous results obtained for the crystal growth of an organic material in a reduced gravity environment. On STS-59, in April 1994, two experiments were conducted with N,N-dimethyl-p-(2,2-dicyanovinyl) aniline (DCVA), a promising nonlinear optical (NLO) material. The space experiments were set to reproduce laboratory experiments that yielded small, bulk crystals of DCVA. The results of the flight experiment, however, were surprising. Rather than producing a bulk single crystal, the result was the production of two high quality, single crystalline thin films. This result was even more intriguing when it is considered that thin films are more desirable for NLO applications than are bulk single crystals. Repeated attempts on the ground to reproduce these results were fruitless. A second set of flight experiments was conducted on STS-69 in September 1995. This time eight DCVA experiments were flown, with each of seven experiments containing a slight change from the first reference experiment. The reference experiment was programmed with growth conditions identical to those of the STS-59 mission. The slight variations in each of the other seven were an attempt to understand what particular parameter was responsible for the preference of thin film growth over bulk crystal growth in microgravity. Once again the results were surprising. In all eight cases thin films were grown again, albeit with varying quality. So now we were faced with a phenomenon that not only takes place in microgravity, but also is very robust, resisting all attempts to force the growth of bulk single crystals.

Accretion of Fat-Free Mass Rather Than Fat Mass in Infancy Is Positively Associated with Linear Growth in Childhood.

Science.gov (United States)

Admassu, Bitiya; Ritz, Christian; Wells, Jonathan C K; Girma, Tsinuel; Andersen, Gregers S; Belachew, Tefera; Owino, Victor; Michaelsen, Kim F; Abera, Mubarek; Wibaek, Rasmus; Friis, Henrik; Kæstel, Pernille

2018-04-01

We have previously shown that fat-free mass (FFM) at birth is associated with height at 2 y of age in Ethiopian children. However, to our knowledge, the relation between changes in body composition during early infancy and later linear growth has not been studied. This study examined the associations of early infancy fat mass (FM) and FFM accretion with linear growth from 1 to 5 y of age in Ethiopian children. In the infant Anthropometry and Body Composition (iABC) study, a prospective cohort study was carried out in children in Jimma, Ethiopia, followed from birth to 5 y of age. FM and FFM were measured ≤6 times from birth to 6 mo by using air-displacement plethysmography. Linear mixed-effects models were used to identify associations between standardized FM and FFM accretion rates during early infancy and linear growth from 1 to 5 y of age. Standardized accretion rates were obtained by dividing FM and FFM accretion by their respective SD. FFM accretion from 0 to 6 mo of age was positively associated with length at 1 y (β = 0.64; 95% CI: 0.19, 1.09; P = 0.005) and linear growth from 1 to 5 y (β = 0.63; 95% CI: 0.19, 1.07; P = 0.005). The strongest association with FFM accretion was observed at 1 y. The association with linear growth from 1 to 5 y was mainly engendered by the 1-y association. FM accretion from 0 to 4 mo was positively associated with linear growth from 1 to 5 y (β = 0.45; 95% CI: 0.02, 0.88; P = 0.038) in the fully adjusted model. In Ethiopian children, FFM accretion was associated with linear growth at 1 y and no clear additional longitudinal effect from 1 to 5 y was observed. FM accretion showed a weak association from 1 to 5 y. This trial was registered at www.controlled-trials.com as ISRCTN46718296.

The effect of substrate orientation on the kinetics and thermodynamics of initial oxide-film growth on metals

Energy Technology Data Exchange (ETDEWEB)

Reichel, Friederike

2007-11-19

This thesis addresses the effect of the parent metal-substrate orientation on the thermodynamics and kinetics of ultra-thin oxide-film growth on bare metals upon their exposure to oxygen gas at low temperatures (up to 650 K). A model description has been developed to predict the thermodynamically stable microstructure of a thin oxide film grown on its bare metal substrate as function of the oxidation conditions and the substrate orientation. For Mg and Ni, the critical oxide-film thickness is less than 1 oxide monolayer and therefore the initial development of an amorphous oxide phase on these metal substrates is unlikely. Finally, for Cu and densely packed Cr and Fe metal surfaces, oxide overgrowth is predicted to proceed by the direct formation and growth of a crystalline oxide phase. Further, polished Al single-crystals with {l_brace}111{r_brace}, {l_brace}100{r_brace} and {l_brace}110{r_brace} surface orientations were introduced in an ultra-high vacuum system for specimen processing and analysis. After surface cleaning and annealing, the bare Al substrates have been oxidized by exposure to pure oxygen gas. During the oxidation, the oxide-film growth kinetics has been established by real-time in-situ spectroscopic ellipsometry. After the oxidation, the oxide-film microstructures were investigated by angle-resolved X-ray photoelectron spectroscopy and low energy electron diffraction. Finally, high-resolution transmission electron microscopic analysis was applied to study the microstructure and morphology of the grown oxide films on an atomic scale. (orig.)

Nanosheet controlled epitaxial growth of PbZr0.52Ti0.48O3 thin films on glass substrates

Science.gov (United States)

Bayraktar, M.; Chopra, A.; Bijkerk, F.; Rijnders, G.

2014-09-01

Integration of PbZr0.52Ti0.48O3 (PZT) films on glass substrates is of high importance for device applications. However, to make use of the superior ferro- and piezoelectric properties of PZT, well-oriented crystalline or epitaxial growth with control of the crystal orientation is a prerequisite. In this article, we report on epitaxial growth of PZT films with (100)- and (110)-orientation achieved by utilizing Ca2Nb3O10 (CNO) and Ti0.87O2 (TO) nanosheets as crystalline buffer layers. Fatigue measurements demonstrated stable ferroelectric properties of these films up to 5 × 109 cycles. (100)-oriented PZT films on CNO nanosheets show a large remnant polarization of 21 μC/cm2 that is the highest remnant polarization value compared to (110)-oriented and polycrystalline films reported in this work. A piezoelectric response of 98 pm/V is observed for (100)-oriented PZT film which is higher than the values reported in the literature on Si substrates.

Synchrotron x-ray study of a low roughness and high efficiency K2CsSb photocathode during film growth

International Nuclear Information System (INIS)

Xie, Junqi; Demarteau, Marcel; Wagner, Robert; Schubert, Susanne; Gaowei, Mengjia; Attenkofer, Klaus; Walsh, John; Smedley, John; Ben-Zvi, Ilan; Wong, Jared; Feng, Jun; Padmore, Howard; Ruiz-Oses, Miguel; Ding, Zihao; Liang, Xue; Muller, Erik

2017-01-01

Reduction of roughness to the nm level is critical of achieving the ultimate performance from photocathodes used in high gradient fields. The thrust of this paper is to explore the evolution of roughness during sequential growth, and to show that deposition of multilayer structures consisting of very thin reacted layers results in an nm level smooth photocathode. Synchrotron x-ray methods were applied to study the multi-step growth process of a high efficiency K 2 CsSb photocathode. A transition point of the Sb film grown on Si was observed at the film thickness of ∼40 Å with the substrate temperature at 100 °C and the growth rate at 0.1 Å s −1 . The final K 2 CsSb photocathode exhibits a thickness of around five times that of the total deposited Sb film regardless of how the Sb film was grown. The film surface roughening process occurs first at the step when K diffuses into the crystalline Sb. The photocathode obtained from the multi-step growth exhibits roughness in an order of magnitude lower than the normal sequential process. X-ray diffraction measurements show that the material goes through two structural changes of the crystalline phase during formation, from crystalline Sb to K 3 Sb and finally to K 2 CsSb. (paper)