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Sample records for length silicon photonic

  1. Nonlinear silicon photonics

    Science.gov (United States)

    Borghi, M.; Castellan, C.; Signorini, S.; Trenti, A.; Pavesi, L.

    2017-09-01

    Silicon photonics is a technology based on fabricating integrated optical circuits by using the same paradigms as the dominant electronics industry. After twenty years of fervid development, silicon photonics is entering the market with low cost, high performance and mass-manufacturable optical devices. Until now, most silicon photonic devices have been based on linear optical effects, despite the many phenomenologies associated with nonlinear optics in both bulk materials and integrated waveguides. Silicon and silicon-based materials have strong optical nonlinearities which are enhanced in integrated devices by the small cross-section of the high-index contrast silicon waveguides or photonic crystals. Here the photons are made to strongly interact with the medium where they propagate. This is the central argument of nonlinear silicon photonics. It is the aim of this review to describe the state-of-the-art in the field. Starting from the basic nonlinearities in a silicon waveguide or in optical resonator geometries, many phenomena and applications are described—including frequency generation, frequency conversion, frequency-comb generation, supercontinuum generation, soliton formation, temporal imaging and time lensing, Raman lasing, and comb spectroscopy. Emerging quantum photonics applications, such as entangled photon sources, heralded single-photon sources and integrated quantum photonic circuits are also addressed at the end of this review.

  2. Hydrogenated amorphous silicon photonics

    Science.gov (United States)

    Narayanan, Karthik

    2011-12-01

    Silicon Photonics is quickly proving to be a suitable interconnect technology for meeting the future goals of on-chip bandwidth and low power requirements. However, it is not clear how silicon photonics will be integrated into CMOS chips, particularly microprocessors. The issue of integrating photonic circuits into electronic IC fabrication processes to achieve maximum flexibility and minimum complexity and cost is an important one. In order to minimize usage of chip real estate, it will be advantageous to integrate in three-dimensions. Hydrogenated amorphous silicon (a-Si:H) is emerging as a promising material for the 3-D integration of silicon photonics for on-chip optical interconnects. In addition, a-Si:H film can be deposited using CMOS compatible low temperature plasma-enhanced chemical vapor deposition (PECVD) process at any point in the fabrication process allowing maximum flexibility and minimal complexity. In this thesis, we demonstrate a-Si:H as a high performance alternate platform to crystalline silicon, enabling backend integration of optical interconnects in a hybrid photonic-electronic network-on-chip architecture. High quality passive devices are fabricated on a low-loss a-Si:H platform enabling wavelength division multiplexing schemes. We demonstrate a broadband all-optical modulation scheme based on free-carrier absorption effect, which can enable compact electro-optic modulators in a-Si:H. Furthermore, we comprehensively characterize the optical nonlinearities in a-Si:H and observe that a-Si:H exhibits enhanced nonlinearities as compared to crystalline silicon. Based on the enhanced nonlinearities, we demonstrate low-power four-wave mixing in a-Si:H waveguides enabling high speed all-optical devices in an a-Si:H platform. Finally, we demonstrate a novel data encoding scheme using thermal and all-optical tuning of silicon waveguides, increasing the spectral efficiency in an interconnect link.

  3. Silicon applications in photonics

    Science.gov (United States)

    Jelenski, A. M.; Gawlik, G.; Wesolowski, M.

    2005-09-01

    Silicon technology enabled the miniaturization of computers and other electronic system for information storage, transmission and transformation allowing the development of the Knowledge Based Information Society. Despite the fact that silicon roadmap indicates possibilities for further improvement, already now the speed of electrons and the bandwidth of electronic circuits are not sufficient and photons are commonly utilized for signal transmission through optical fibers and purely photonic circuits promise further improvements. However materials used for these purposes II/V semiconductor compounds, glasses make integration of optoelectronic circuits with silicon complex an expensive. Therefore research on light generation, transformation and transmission in silicon is very active and recently, due to nanotechnology some spectacular results were achieved despite the fact that mechanisms of light generation are still discussed. Three topics will be discussed. Porous silicon was actively investigated due to its relatively efficient electroluminescence enabling its use in light sources. Its index of refraction, differs considerably from the index of silicon, and this allows its utilization for Bragg mirrors, wave guides and photonic crystals. The enormous surface enables several applications on medicine and biotechnology and in particular due to the effective chemo-modulation of its refracting index the design of optical chemosensors. An effective luminescence of doped and undoped nanocrystalline silicon opened another way for the construction of silicon light sources. Optical amplification was already discovered opening perspectives for the construction of nanosilicon lasers. Luminescences was observed at red, green and blue wavelengths. The used technology of silica and ion implantation are compatible with commonly used CMOS technology. Finally the recently developed and proved idea of optically pumped silicon Raman lasers, using nonlinearity and vibrations in the

  4. Silicon photonic integration in telecommunications

    Directory of Open Access Journals (Sweden)

    Christopher Richard Doerr

    2015-08-01

    Full Text Available Silicon photonics is the guiding of light in a planar arrangement of silicon-based materials to perform various functions. We focus here on the use of silicon photonics to create transmitters and receivers for fiber-optic telecommunications. As the need to squeeze more transmission into a given bandwidth, a given footprint, and a given cost increases, silicon photonics makes more and more economic sense.

  5. Silicon photonics fundamentals and devices

    CERN Document Server

    Deen, M Jamal

    2012-01-01

    The creation of affordable high speed optical communications using standard semiconductor manufacturing technology is a principal aim of silicon photonics research. This would involve replacing copper connections with optical fibres or waveguides, and electrons with photons. With applications such as telecommunications and information processing, light detection, spectroscopy, holography and robotics, silicon photonics has the potential to revolutionise electronic-only systems. Providing an overview of the physics, technology and device operation of photonic devices using exclusively silicon and related alloys, the book includes: * Basic Properties of Silicon * Quantum Wells, Wires, Dots and Superlattices * Absorption Processes in Semiconductors * Light Emitters in Silicon * Photodetectors , Photodiodes and Phototransistors * Raman Lasers including Raman Scattering * Guided Lightwaves * Planar Waveguide Devices * Fabrication Techniques and Material Systems Silicon Photonics: Fundamentals and Devices outlines ...

  6. Topological Order in Silicon Photonics

    Science.gov (United States)

    2017-02-07

    AFRL-AFOSR-VA-TR-2017-0037 Topological orders in Silicon photonics Mohammad Hafezi MARYLAND UNIV COLLEGE PARK 3112 LEE BLDG COLLEGE PARK, MD 20742...15 SEP 2016 4. TITLE AND SUBTITLE Topological Order in Silicon Photonics 5a. CONTRACT NUMBER 5b. GRANT NUMBER FA-9550-14-1-0267 5c. PROGRAM...matter to ultra cold gases. Recently, photonic systems have been under investigation to explore various types of topological orders and to potentially

  7. Silicon photonics: some remaining challenges

    Science.gov (United States)

    Reed, G. T.; Topley, R.; Khokhar, A. Z.; Thompson, D. J.; Stanković, S.; Reynolds, S.; Chen, X.; Soper, N.; Mitchell, C. J.; Hu, Y.; Shen, L.; Martinez-Jimenez, G.; Healy, N.; Mailis, S.; Peacock, A. C.; Nedeljkovic, M.; Gardes, F. Y.; Soler Penades, J.; Alonso-Ramos, C.; Ortega-Monux, A.; Wanguemert-Perez, G.; Molina-Fernandez, I.; Cheben, P.; Mashanovich, G. Z.

    2016-03-01

    This paper discusses some of the remaining challenges for silicon photonics, and how we at Southampton University have approached some of them. Despite phenomenal advances in the field of Silicon Photonics, there are a number of areas that still require development. For short to medium reach applications, there is a need to improve the power consumption of photonic circuits such that inter-chip, and perhaps intra-chip applications are viable. This means that yet smaller devices are required as well as thermally stable devices, and multiple wavelength channels. In turn this demands smaller, more efficient modulators, athermal circuits, and improved wavelength division multiplexers. The debate continues as to whether on-chip lasers are necessary for all applications, but an efficient low cost laser would benefit many applications. Multi-layer photonics offers the possibility of increasing the complexity and effectiveness of a given area of chip real estate, but it is a demanding challenge. Low cost packaging (in particular, passive alignment of fibre to waveguide), and effective wafer scale testing strategies, are also essential for mass market applications. Whilst solutions to these challenges would enhance most applications, a derivative technology is emerging, that of Mid Infra-Red (MIR) silicon photonics. This field will build on existing developments, but will require key enhancements to facilitate functionality at longer wavelengths. In common with mainstream silicon photonics, significant developments have been made, but there is still much left to do. Here we summarise some of our recent work towards wafer scale testing, passive alignment, multiplexing, and MIR silicon photonics technology.

  8. Silicon Photonics Cloud (SiCloud)

    DEFF Research Database (Denmark)

    DeVore, P. T. S.; Jiang, Y.; Lynch, M.

    2015-01-01

    Silicon Photonics Cloud (SiCloud.org) is the first silicon photonics interactive web tool. Here we report new features of this tool including mode propagation parameters and mode distribution galleries for user specified waveguide dimensions and wavelengths.......Silicon Photonics Cloud (SiCloud.org) is the first silicon photonics interactive web tool. Here we report new features of this tool including mode propagation parameters and mode distribution galleries for user specified waveguide dimensions and wavelengths....

  9. ePIXfab - The silicon photonics platform

    NARCIS (Netherlands)

    Khanna, A.; Drissi, Y.; Dumon, P.; Baets, R.; Absil, P.; Pozo Torres, J.M.; Lo Cascio, D.M.R.; Fournier, M.; Fedeli, J.M.; Fulbert, L.; Zimmermann, L.; Tillack, B.; Aalto, T.; O'Brien, P.; Deptuck, D.; Xu, J.; Gale, D.

    2013-01-01

    ePIXfab-The European Silicon Photonics Support Center continues to provide state-of-the-art silicon photonics solutions to academia and industry for prototyping and research. ePIXfab is a consortium of EU research centers providing diverse expertise in the silicon photonics food chain, from training

  10. Photonic integration and photonics-electronics convergence on silicon platform

    CERN Document Server

    Liu, Jifeng; Baba, Toshihiko; Vivien, Laurent; Xu, Dan-Xia

    2015-01-01

    Silicon photonics technology, which has the DNA of silicon electronics technology, promises to provide a compact photonic integration platform with high integration density, mass-producibility, and excellent cost performance. This technology has been used to develop and to integrate various photonic functions on silicon substrate. Moreover, photonics-electronics convergence based on silicon substrate is now being pursued. Thanks to these features, silicon photonics will have the potential to be a superior technology used in the construction of energy-efficient cost-effective apparatuses for various applications, such as communications, information processing, and sensing. Considering the material characteristics of silicon and difficulties in microfabrication technology, however, silicon by itself is not necessarily an ideal material. For example, silicon is not suitable for light emitting devices because it is an indirect transition material. The resolution and dynamic range of silicon-based interference de...

  11. Hybrid Integrated Platforms for Silicon Photonics

    Science.gov (United States)

    Liang, Di; Roelkens, Gunther; Baets, Roel; Bowers, John E.

    2010-01-01

    A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration of III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques is compared, one comprising only inorganic materials, the other technique using an organic bonding agent. Issues such as bonding process and mechanism, bonding strength, uniformity, wafer surface requirement, and stress distribution are studied in detail. The application in silicon photonics to realize high-performance active and passive photonic devices on low-cost silicon wafers is discussed. Hybrid integration is believed to be a promising technology in a variety of applications of silicon photonics.

  12. Silicon photonic physical unclonable function.

    Science.gov (United States)

    Grubel, Brian C; Bosworth, Bryan T; Kossey, Michael R; Sun, Hongcheng; Cooper, A Brinton; Foster, Mark A; Foster, Amy C

    2017-05-29

    Physical unclonable functions (PUFs) serve as a hardware source of private information that cannot be duplicated and have applications in hardware integrity and information security. Here we demonstrate a photonic PUF based on ultrafast nonlinear optical interactions in a chaotic silicon micro-cavity. The device is probed with a spectrally-encoded ultrashort optical pulse, which nonlinearly interacts with the micro-cavity. This interaction produces a highly complex and unpredictable, yet deterministic, ultrafast response that can serve as a unique "fingerprint" of the cavity and as a source of private information for the device's holder. Experimentally, we extract 17.1-kbit binary keys from six different photonic PUF designs and demonstrate the uniqueness and reproducibility of these keys. Furthermore, we experimentally test exact copies of the six photonic PUFs and demonstrate their unclonability due to unavoidable fabrication variations.

  13. Silicon photonics for telecommunications and biomedicine

    CERN Document Server

    Fathpour, Sasan

    2011-01-01

    Given silicon's versatile material properties, use of low-cost silicon photonics continues to move beyond light-speed data transmission through fiber-optic cables and computer chips. Its application has also evolved from the device to the integrated-system level. A timely overview of this impressive growth, Silicon Photonics for Telecommunications and Biomedicine summarizes state-of-the-art developments in a wide range of areas, including optical communications, wireless technologies, and biomedical applications of silicon photonics. With contributions from world experts, this reference guides

  14. Silicon photonics III systems and applications

    CERN Document Server

    Lockwood, David

    2016-01-01

    This book is volume III of a series of books on silicon photonics. It reports on the development of fully integrated systems where many different photonics component are integrated together to build complex circuits. This is the demonstration of the fully potentiality of silicon photonics. It contains a number of chapters written by engineers and scientists of the main companies, research centers and universities active in the field. It can be of use for all those persons interested to know the potentialities and the recent applications of silicon photonics both in microelectronics, telecommunication and consumer electronics market.

  15. Programmable Quantum Photonic Processor Using Silicon Photonics

    Science.gov (United States)

    2017-04-01

    mentioned above, increased infidelity in the single photon states produced by sources sharply increases the resource overhead for quantum repeaters...for a time-invariant cavity. Using a “dual Hong-Ou-Mandel” geometry shown in Fig. 3, we were able to ensure that the incoming and existing photon

  16. Silicon photonic thermometer operating on multiple polarizations

    DEFF Research Database (Denmark)

    Guan, Xiaowei; Wang, Xiaoyan; Frandsen, Lars Hagedorn

    2016-01-01

    A silicon photonics optical thermometer simultaneously operating on the multiple polarizations is designed and experimentally demonstrated. Measured sensitivities are 86pm/°C and 48pm/°C for the transverse-electric and transverse-magnetic polarizations, respectively.......A silicon photonics optical thermometer simultaneously operating on the multiple polarizations is designed and experimentally demonstrated. Measured sensitivities are 86pm/°C and 48pm/°C for the transverse-electric and transverse-magnetic polarizations, respectively....

  17. Silicon photonics at the University of Surrey

    Science.gov (United States)

    Reed, G. T.; Mashanovich, G.; Gardes, F. Y.; Gwilliam, R. M.; Wright, N. M.; Thomson, D. J.; Timotijevic, B. D.; Litvinenko, K. L.; Headley, W. R.; Smith, A. J.; Knights, A. P.; Jessop, P. E.; Tarr, N. G.; Deane, J. H. B.

    2009-05-01

    Silicon Photonics is a field that has seen rapid growth and dramatic changes in the past 5 years. According to the MIT Communications Technology Roadmap [1], which aims to establish a common architecture platform across market sectors with a potential $20B in annual revenue, silicon photonics is among the top ten emerging technologies. This has in part been a consequence of the recent involvement of large semiconductor companies around the world, particularly in the USA. Significant investment in the technology has also followed in Japan, Korea, and in the European Union. Low cost is a key driver, so it is imperative to pursue technologies that are mass-producible. Therefore, Silicon Photonics continues to progress at a rapid rate. This paper will describe some of the work of the Silicon Photonics Group at the University of Surrey in the UK. The work is concerned with the sequential development of a series of components for silicon photonic optical circuits, and some of the components are discussed here. In particular the paper will present work on optical waveguides, optical filters, modulators, and lifetime modification of carriers generated by two photon absorption, to improve the performance of Raman amplifiers in silicon.

  18. Emerging heterogeneous integrated photonic platforms on silicon

    Directory of Open Access Journals (Sweden)

    Fathpour Sasan

    2015-05-01

    Full Text Available Silicon photonics has been established as a mature and promising technology for optoelectronic integrated circuits, mostly based on the silicon-on-insulator (SOI waveguide platform. However, not all optical functionalities can be satisfactorily achieved merely based on silicon, in general, and on the SOI platform, in particular. Long-known shortcomings of silicon-based integrated photonics are optical absorption (in the telecommunication wavelengths and feasibility of electrically-injected lasers (at least at room temperature. More recently, high two-photon and free-carrier absorptions required at high optical intensities for third-order optical nonlinear effects, inherent lack of second-order optical nonlinearity, low extinction ratio of modulators based on the free-carrier plasma effect, and the loss of the buried oxide layer of the SOI waveguides at mid-infrared wavelengths have been recognized as other shortcomings. Accordingly, several novel waveguide platforms have been developing to address these shortcomings of the SOI platform. Most of these emerging platforms are based on heterogeneous integration of other material systems on silicon substrates, and in some cases silicon is integrated on other substrates. Germanium and its binary alloys with silicon, III–V compound semiconductors, silicon nitride, tantalum pentoxide and other high-index dielectric or glass materials, as well as lithium niobate are some of the materials heterogeneously integrated on silicon substrates. The materials are typically integrated by a variety of epitaxial growth, bonding, ion implantation and slicing, etch back, spin-on-glass or other techniques. These wide range of efforts are reviewed here holistically to stress that there is no pure silicon or even group IV photonics per se. Rather, the future of the field of integrated photonics appears to be one of heterogenization, where a variety of different materials and waveguide platforms will be used for

  19. Silicon photonics for multicore fiber communication

    DEFF Research Database (Denmark)

    Ding, Yunhong; Kamchevska, Valerija; Dalgaard, Kjeld

    2016-01-01

    We review our recent work on silicon photonics for multicore fiber communication, including multicore fiber fan-in/fan-out, multicore fiber switches towards reconfigurable optical add/drop multiplexers. We also present multicore fiber based quantum communication using silicon devices....

  20. Photonic Crystal Sensors Based on Porous Silicon

    Directory of Open Access Journals (Sweden)

    Claudia Pacholski

    2013-04-01

    Full Text Available Porous silicon has been established as an excellent sensing platform for the optical detection of hazardous chemicals and biomolecular interactions such as DNA hybridization, antigen/antibody binding, and enzymatic reactions. Its porous nature provides a high surface area within a small volume, which can be easily controlled by changing the pore sizes. As the porosity and consequently the refractive index of an etched porous silicon layer depends on the electrochemial etching conditions photonic crystals composed of multilayered porous silicon films with well-resolved and narrow optical reflectivity features can easily be obtained. The prominent optical response of the photonic crystal decreases the detection limit and therefore increases the sensitivity of porous silicon sensors in comparison to sensors utilizing Fabry-Pérot based optical transduction. Development of porous silicon photonic crystal sensors which allow for the detection of analytes by the naked eye using a simple color change or the fabrication of stacked porous silicon photonic crystals showing two distinct optical features which can be utilized for the discrimination of analytes emphasize its high application potential.

  1. Photonic Crystal Sensors Based on Porous Silicon

    Science.gov (United States)

    Pacholski, Claudia

    2013-01-01

    Porous silicon has been established as an excellent sensing platform for the optical detection of hazardous chemicals and biomolecular interactions such as DNA hybridization, antigen/antibody binding, and enzymatic reactions. Its porous nature provides a high surface area within a small volume, which can be easily controlled by changing the pore sizes. As the porosity and consequently the refractive index of an etched porous silicon layer depends on the electrochemial etching conditions photonic crystals composed of multilayered porous silicon films with well-resolved and narrow optical reflectivity features can easily be obtained. The prominent optical response of the photonic crystal decreases the detection limit and therefore increases the sensitivity of porous silicon sensors in comparison to sensors utilizing Fabry-Pérot based optical transduction. Development of porous silicon photonic crystal sensors which allow for the detection of analytes by the naked eye using a simple color change or the fabrication of stacked porous silicon photonic crystals showing two distinct optical features which can be utilized for the discrimination of analytes emphasize its high application potential. PMID:23571671

  2. Silicon photonic heater-modulator

    Science.gov (United States)

    Zortman, William A.; Trotter, Douglas Chandler; Watts, Michael R.

    2015-07-14

    Photonic modulators, methods of forming photonic modulators and methods of modulating an input optical signal are provided. A photonic modulator includes a disk resonator having a central axis extending along a thickness direction of the disk resonator. The disk resonator includes a modulator portion and a heater portion. The modulator portion extends in an arc around the central axis. A PN junction of the modulator portion is substantially normal to the central axis.

  3. SiCloud: an online education tool for silicon photonics

    Science.gov (United States)

    Jiang, Cathy Y.; DeVore, Peter T. S.; Lonappan, Cejo Konuparamban; Adam, Jost; Jalali, Bahram

    2017-08-01

    The silicon photonics industry is projected to be a multibillion dollar industry driven by the growth of data centers. In this work, we present an interactive online tool for silicon photonics. Silicon Photonics Cloud (SiCCloud.org) is an easy to use instructional tool for optical properties of silicon and related materials, waveguide design and modal simulations as well as information capacity of silicon channels.

  4. Silicon Photonic Integrated Circuit Mode Multiplexer

    DEFF Research Database (Denmark)

    Ding, Yunhong; Ou, Haiyan; Xu, Jing

    2013-01-01

    We propose and demonstrate a novel silicon photonic integrated circuit enabling multiplexing of orthogonal modes in a few-mode fiber (FMF). By selectively launching light to four vertical grating couplers, all six orthogonal spatial and polarization modes supported by the FMF are successfully exc...

  5. Planar photonic crystal waveguides in silicon oxynitride

    DEFF Research Database (Denmark)

    Liu, Haoling; Frandsen, Lars Hagedorn; Borel, Peter Ingo

    , at visible wavelengths they absorb light very strongly. In contrary, silicon oxynitride (SiON) glasses offer high transparency down to blue and ultraviolet wavelengths. Thus, SiON photonic crystal waveguides can open for new possibilities, e.g., within sensing and life sciences. We have fabricated Si...

  6. Silicon Nano-Photonic Devices

    DEFF Research Database (Denmark)

    Pu, Minhao

    to microwave systems and biosensing devices. An ultra-low loss inverse taper coupler for interfacing silicon ridge waveguides and optical bers is introduced and insertion losses of less than 1 dB are achieved for both transverse-electric (TE) and transversemagnetic (TM) polarizations. Integrated...... with the couplers, a silicon ridge waveguide is utilized in nonlinear all-optical signal processing for optical time division multiplexing (OTDM) systems. Record ultra-highspeed error-free optical demultiplexing and waveform sampling are realized and demonstrated for the rst time. Microwave phase shifters and notch...

  7. Strong spin-photon coupling in silicon.

    Science.gov (United States)

    Samkharadze, N; Zheng, G; Kalhor, N; Brousse, D; Sammak, A; Mendes, U C; Blais, A; Scappucci, G; Vandersypen, L M K

    2018-03-09

    Long coherence times of single spins in silicon quantum dots make these systems highly attractive for quantum computation, but how to scale up spin qubit systems remains an open question. As a first step to address this issue, we demonstrate the strong coupling of a single electron spin and a single microwave photon. The electron spin is trapped in a silicon double quantum dot, and the microwave photon is stored in an on-chip high-impedance superconducting resonator. The electric field component of the cavity photon couples directly to the charge dipole of the electron in the double dot, and indirectly to the electron spin, through a strong local magnetic field gradient from a nearby micromagnet. Our results provide a route to realizing large networks of quantum dot-based spin qubit registers. Copyright © 2018 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works.

  8. Optical microcavities based on surface modes in two-dimensional photonic crystals and silicon-on-insulator photonic crystals

    DEFF Research Database (Denmark)

    Xiao, Sanshui; Qiu, M.

    2007-01-01

    Surface-mode optical microcavities based on two-dimensional photonic crystals and silicon-on-insulator photonic crystals are studied. We demonstrate that a high-quality-factor microcavity can be easily realized in these structures. With an increasing of the cavity length, the quality factor...... is gradually enhanced and the resonant frequency converges to that of the corresponding surface mode in the photonic crystals. These structures have potential applications such as sensing....

  9. Metropolitan Quantum Key Distribution with Silicon Photonics

    Science.gov (United States)

    Bunandar, Darius; Lentine, Anthony; Lee, Catherine; Cai, Hong; Long, Christopher M.; Boynton, Nicholas; Martinez, Nicholas; DeRose, Christopher; Chen, Changchen; Grein, Matthew; Trotter, Douglas; Starbuck, Andrew; Pomerene, Andrew; Hamilton, Scott; Wong, Franco N. C.; Camacho, Ryan; Davids, Paul; Urayama, Junji; Englund, Dirk

    2018-04-01

    Photonic integrated circuits provide a compact and stable platform for quantum photonics. Here we demonstrate a silicon photonics quantum key distribution (QKD) encoder in the first high-speed polarization-based QKD field tests. The systems reach composable secret key rates of 1.039 Mbps in a local test (on a 103.6-m fiber with a total emulated loss of 9.2 dB) and 157 kbps in an intercity metropolitan test (on a 43-km fiber with 16.4 dB loss). Our results represent the highest secret key generation rate for polarization-based QKD experiments at a standard telecom wavelength and demonstrate photonic integrated circuits as a promising, scalable resource for future formation of metropolitan quantum-secure communications networks.

  10. Laser Integration on Silicon Photonic Circuits Through Transfer Printing

    Science.gov (United States)

    2017-03-10

    silicon transfer printed single wavelength laser . Introduction Silicon has long offered promise as the ultimate platform for realizing compact photonic...the field has faced a big stumbling block: the lack of an integrated laser source. Thus far, silicon-photonics applications have had to rely on...AFRL-AFOSR-UK-TR-2017-0019 Laser integration on silicon photonic circuits through transfer printing Gunther Roelkens UNIVERSITEIT GENT VZW Final

  11. Multipurpose silicon photonics signal processor core.

    Science.gov (United States)

    Pérez, Daniel; Gasulla, Ivana; Crudgington, Lee; Thomson, David J; Khokhar, Ali Z; Li, Ke; Cao, Wei; Mashanovich, Goran Z; Capmany, José

    2017-09-21

    Integrated photonics changes the scaling laws of information and communication systems offering architectural choices that combine photonics with electronics to optimize performance, power, footprint, and cost. Application-specific photonic integrated circuits, where particular circuits/chips are designed to optimally perform particular functionalities, require a considerable number of design and fabrication iterations leading to long development times. A different approach inspired by electronic Field Programmable Gate Arrays is the programmable photonic processor, where a common hardware implemented by a two-dimensional photonic waveguide mesh realizes different functionalities through programming. Here, we report the demonstration of such reconfigurable waveguide mesh in silicon. We demonstrate over 20 different functionalities with a simple seven hexagonal cell structure, which can be applied to different fields including communications, chemical and biomedical sensing, signal processing, multiprocessor networks, and quantum information systems. Our work is an important step toward this paradigm.Integrated optical circuits today are typically designed for a few special functionalities and require complex design and development procedures. Here, the authors demonstrate a reconfigurable but simple silicon waveguide mesh with different functionalities.

  12. Silicon photonics design from devices to systems

    CERN Document Server

    Chrostowski, Lukas

    2015-01-01

    From design and simulation through to testing and fabrication, this hands-on introduction to silicon photonics engineering equips students with everything they need to begin creating foundry-ready designs. In-depth discussion of real-world issues and fabrication challenges ensures that students are fully equipped for careers in industry. Step-by-step tutorials, straightforward examples, and illustrative source code fragments guide students through every aspect of the design process, providing a practical framework for developing and refining key skills. Offering industry-ready expertise, the text supports existing PDKs for CMOS UV-lithography foundry services (OpSIS, ePIXfab, imec, LETI, IME and CMC) and the development of new kits for proprietary processes and clean-room based research. Accompanied by additional online resources to support students, this is the perfect learning package for senior undergraduate and graduate students studying silicon photonics design, and academic and industrial researchers in...

  13. Photon response of silicon diode neutron detectors

    International Nuclear Information System (INIS)

    McCall, R.C.; Jenkins, T.M.; Oliver, G.D. Jr.

    1976-07-01

    The photon response of silicon diode neutron detectors was studied to solve the problem on detecting neutrons in the presence of high energy photons at accelerator neutron sources. For the experiment Si diodes, Si discs, and moderated activation foil detectors were used. The moderated activation foil detector consisted of a commercial moderator and indium foils 2'' in diameter and approximately 2.7 grams each. The moderator is a cylinder of low-density polyethylene 6 1 / 4 '' in diameter by 6 1 / 16 '' long covered with 0.020'' of cadmium. Neutrons are detected by the reaction 115 In (n,γ) 116 In(T/sub 1 / 2 / = 54 min). Photons cannot be detected directly but photoneutrons produced in the moderator assembly can cause a photon response. The Si discs were thin slices of single-crystal Si about 1.4 mils thick and 1'' in diameter which were used as activation detectors, subsequently being counted on a thin-window pancake G.M. counter. The Si diode fast neutron dosimeter 5422, manufactured by AB Atomenergi in Studsvik, Sweden, consists of a superdoped silicon wafer with a base width of 0.050 inches between two silver contacts coated with 2 mm of epoxy. For this experiment, the technique of measuring the percent change of voltage versus dose was used. Good precision was obtained using both unirradiated and preirradiated diodes. All diodes, calibrated against 252 CF in air,were read out 48 hours after irradiation to account for any room temperature annealing. Results are presented and discussed

  14. Mid-infrared integrated photonics on silicon: a perspective

    Science.gov (United States)

    Lin, Hongtao; Luo, Zhengqian; Gu, Tian; Kimerling, Lionel C.; Wada, Kazumi; Agarwal, Anu; Hu, Juejun

    2017-12-01

    The emergence of silicon photonics over the past two decades has established silicon as a preferred substrate platform for photonic integration. While most silicon-based photonic components have so far been realized in the near-infrared (near-IR) telecommunication bands, the mid-infrared (mid-IR, 2-20-μm wavelength) band presents a significant growth opportunity for integrated photonics. In this review, we offer our perspective on the burgeoning field of mid-IR integrated photonics on silicon. A comprehensive survey on the state-of-the-art of key photonic devices such as waveguides, light sources, modulators, and detectors is presented. Furthermore, on-chip spectroscopic chemical sensing is quantitatively analyzed as an example of mid-IR photonic system integration based on these basic building blocks, and the constituent component choices are discussed and contrasted in the context of system performance and integration technologies.

  15. Silicon photonics: Design, fabrication, and characterization of on-chip optical interconnects

    Science.gov (United States)

    Hsieh, I.-Wei

    devices are quite different from those of electronic devices. Minimizing propagation losses by reducing sidewall roughness to nanometer scale over a device length of several millimeters or even centimeters has prompted researchers in academia and industry to refine the fabrication process. Chapter 3 of this thesis summarizes our efforts in fabricating silicon photonic devices using standard CMOS technology. Chapter 4 describes the characterization of nonlinear effects, including self-phase modulation (SPM), cross-phase modulation (XPM), and supercontinuum generation in silicon-wire waveguides. Silicon-wire waveguides are strip waveguides with submicron transverse dimensions, which allow strong light confinement inside the silicon core. This strong optical confinement, in addition to the large third-order nonlinear optical susceptibility of crystalline silicon, leads to a net nonlinearity which is several orders of magnitude higher than the nonlinearity of silica fiber. Significant nonlinear effects can be observed and characterized over a device length of only several millimeters in silicon wires with very small input power. These effects provide opportunities for engineers to design active silicon photonic devices which are compact and energy-efficient. Chapter 5 presents a realization of an integrated SOI optical isolator, which is a critical yet often overlooked component in photonic integrated circuits. This study shows the feasibility to make a hybrid garnet/SOI active device with very promising results. Finally, Chapter 6 summarizes our demonstration of transmitting terabit-scale data streams in silicon-wire waveguides, which is an important first-step towards enabling intra-chip interconnection networks with ultra-high bandwidths. Although the scope of this thesis is limited to providing only fractional views of the whole silicon photonics area, it provides enough references for interested readers to conduct further literature research in other aspects of silicon

  16. A complete design flow for silicon photonics

    Science.gov (United States)

    Pond, James; Cone, Chris; Chrostowski, Lukas; Klein, Jackson; Flueckiger, Jonas; Liu, Amy; McGuire, Dylan; Wang, Xu

    2014-05-01

    Broad adoption of silicon photonics technology for photonic integrated circuits requires standardized design flows that are similar to what is available for analog and mixed signal electrical circuit design. We have developed a design flow that combines mature electronic design automation (EDA) software with optical simulation software. An essential component of any design flow, whether electrical or photonic, is the ability to accurately simulate largescale circuits. This is particularly important when the behavior of the circuit is not trivially related to the individual component performance. While this is clearly the case for electronic circuits consisting of hundreds to billions of transistors, it is already becoming important in photonic circuits such as WDM transmitters, where signal cross talk needs to be considered, as well as optical cross-connect switches. In addition, optical routing to connect different components requires the introduction of additional waveguide sections, waveguide bends, and waveguide crossings, which affect the overall circuit performance. Manufacturing variability can also have dramatic circuit-level consequences that need to be simulated. Circuit simulations must rely on compact models that can accurately represent the behavior of each component, and the compact model parameters must be extracted from physical level simulation and experimental results. We show how large scale circuits can be simulated in both the time and frequency domains, including the effects of bidirectional and, where appropriate, multimode and multichannel photonic waveguides. We also show how active, passive and nonlinear individual components such as grating couplers, waveguides, splitters, filters, electro-optical modulators and detectors can be simulated using a combination of electrical and optical algorithms, and good agreement with experimental results can be obtained. We then show how parameters, with inclusion of fabrication process variations, can

  17. Parameter extraction from fabricated silicon photonic devices.

    Science.gov (United States)

    Chen, Xi; Li, Zheng; Mohamed, Moustafa; Shang, Li; Mickelson, Alan R

    2014-03-01

    Three sets of devices were simulated, designed, and laid out for fabrication in the EuroPractice shuttle program and then measured in-house after fabrication. A combination of analytical and numerical modeling is used to extract the dispersion curves that define the effective index of refraction as a function of wavelength for three different classes of silicon photonic devices, namely, micro-ring resonators, racetrack resonators, and directional couplers. The results of this phenomenological study are made plausible by the linearity of the extracted dispersion curves with wavelength over the wavelength regime of interest (S and C bands) and the use of the determined effective indices to reconstruct the measured transmission as a function of wavelength curves in close agreement with experiment. The extracted effective indices can be used to place limits on the actual fabricated values of waveguide widths, thicknesses, radii of curvature, and coupling gaps.

  18. Photonic molecules for improving the optical response of macroporous silicon photonic crystals for gas sensing purposes.

    Science.gov (United States)

    Cardador, D; Segura, D; Rodríguez, A

    2018-02-19

    In this paper, we report the benefits of working with photonic molecules in macroporous silicon photonic crystals. In particular, we theoretically and experimentally demonstrate that the optical properties of a resonant peak produced by a single photonic atom of 2.6 µm wide can be sequentially improved if a second and a third cavity of the same length are introduced in the structure. As a consequence of that, the base of the peak is reduced from 500 nm to 100 nm, while its amplitude remains constant, increasing its Q-factor from its initial value of 25 up to 175. In addition, the bandgap is enlarged almost twice and the noise within it is mostly eliminated. In this study we also provide a way of reducing the amplitude of one or two peaks, depending whether we are in the two- or three-cavity case, by modifying the length of the involved photonic molecules so that the remainder can be used to measure gas by spectroscopic methods.

  19. Integrating optical emitters into silicon photonic waveguides

    Science.gov (United States)

    Milgram, Joel

    were measured to be 11 +/- 2 dB/cm and 20 +/- 2 dB/cm at 850 nm in the TE and TM polarizations respectively. A wavelength dependent loss of -0.14 +/- 0.03 dB/(cm*nm) was found to exist in the material loss of Si-nc films. In addition, the Si-nc films were found to undergo a partially recoverable photo-induced degradation of PL efficiency during exposure to pump light. Processing techniques compatible with both high efficiency Si-nc and low loss silicon nitride were developed and described. A two-sectioned photonic device was also designed, fabricated and characterized. The device contained an optically pumped Si-nc emitting waveguide section integrated with a low loss silicon nitride slab waveguide. The potential for optically pumped Si-nc emitters integrated with silicon nitride photonic circuits thus appears promising.

  20. Flexible integration of free-standing nanowires into silicon photonics.

    Science.gov (United States)

    Chen, Bigeng; Wu, Hao; Xin, Chenguang; Dai, Daoxin; Tong, Limin

    2017-06-14

    Silicon photonics has been developed successfully with a top-down fabrication technique to enable large-scale photonic integrated circuits with high reproducibility, but is limited intrinsically by the material capability for active or nonlinear applications. On the other hand, free-standing nanowires synthesized via a bottom-up growth present great material diversity and structural uniformity, but precisely assembling free-standing nanowires for on-demand photonic functionality remains a great challenge. Here we report hybrid integration of free-standing nanowires into silicon photonics with high flexibility by coupling free-standing nanowires onto target silicon waveguides that are simultaneously used for precise positioning. Coupling efficiency between a free-standing nanowire and a silicon waveguide is up to ~97% in the telecommunication band. A hybrid nonlinear-free-standing nanowires-silicon waveguides Mach-Zehnder interferometer and a racetrack resonator for significantly enhanced optical modulation are experimentally demonstrated, as well as hybrid active-free-standing nanowires-silicon waveguides circuits for light generation. These results suggest an alternative approach to flexible multifunctional on-chip nanophotonic devices.Precisely assembling free-standing nanowires for on-demand photonic functionality remains a challenge. Here, Chen et al. integrate free-standing nanowires into silicon waveguides and show all-optical modulation and light generation on silicon photonic chips.

  1. Optical manipulation and sensing with silicon photonics

    Science.gov (United States)

    Lin, Shiyun

    Optical trapping enables the non-contact manipulation of micro and nanoparticles with extremely high precision. Recent research on integrated optical trapping using the evanescent fields of photonic devices has opened up new opportunities for the manipulation of nano- and microparticles in lab-on-a-chip devices. Considerable interest has emerged for the use of optical microcavities as "sensors-on-a-chip", due to the possibility for the label-free detection of nanoparticles and molecules with high sensitivity. This dissertation focuses on the demonstration of an on-chip optical manipulation system with multiple functionalities, including trapping, buffering, sorting, and sensing. We demonstrate the optically trapping of polystyrene particles with diameters from 110 nm to 5.6 microm using silicon microrings and photonic crystal cavities. By integrating multiple microrings with different resonant wavelengths, we show that tuning the laser wavelength to the resonance wavelengths of different rings enables trapped particles to be transferred back and forth between the rings in a controllable manner. We term this functionality "buffering". We furthermore demonstrate an integrated microparticle passive sorting system based on the near-field optical forces exerted by a 3-dB optical power splitter that consists of a slot waveguide and a conventional channel waveguide. In related work, we demonstrate an ultra-compact polarization splitter design leveraging the giant birefringence of silicon-on-insulator slot waveguides to achieve a high extinction ratio over the entire C band. We demonstrate trapping-assisted particle sensing, using the shift in the microcavity resonance induced by the trapped particle. We show that this permits the sensing of proteins via a binding assay approach, in which the presence of green fluorescent protein causes the particles to bind. By detecting the size distribution of particles clusters using the microcavity, we quantitatively detect the GFP

  2. Reconfigurable SDM Switching Using Novel Silicon Photonic Integrated Circuit

    DEFF Research Database (Denmark)

    Ding, Yunhong; Kamchevska, Valerija; Dalgaard, Kjeld

    2016-01-01

    -division multiplexing switching using silicon photonic integrated circuit, which is fabricated on a novel silicon-oninsulator platform with buried Al mirror. The silicon photonic integrated circuit is composed of a 7x7 switch and low loss grating coupler array based multicore fiber couplers. Thanks to the Al mirror......, grating couplers with ultra-low coupling loss with optical multicore fibers is achieved. The lowest total insertion loss of the silicon integrated circuit is as low as 4.5 dB, with low crosstalk lower than -30 dB. Excellent performances in terms of low insertion loss and low crosstalk are obtained...

  3. Slow-light-enhanced energy efficiency for graphene microheaters on silicon photonic crystal waveguides

    DEFF Research Database (Denmark)

    Yan, Siqi; Zhu, Xiaolong; Frandsen, Lars Hagedorn

    2017-01-01

    in silicon photonics. The corresponding figure of merit of the device is 2.543 nW s, one order of magnitude better than results reported in previous studies. The influence of the length and shape of the graphene heater to the tuning efficiency is further investigated, providing valuable guidelines...

  4. Heterogeneous Silicon Photonics OFDR Sensing System, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Luna will team with Dr. John Bowers of UCSB to develop an Optical Frequency Domain Reflectometry (OFDR) system-on-chip using heterogeneous silicon photonics to...

  5. Ultra-high-speed Optical Signal Processing using Silicon Photonics

    DEFF Research Database (Denmark)

    Oxenløwe, Leif Katsuo; Ji, Hua; Jensen, Asger Sellerup

    with a photonic layer on top to interconnect them. For such systems, silicon is an attractive candidate enabling both electronic and photonic control. For some network scenarios, it may be beneficial to use optical on-chip packet switching, and for high data-density environments one may take advantage...... of the ultra-fast nonlinear response of silicon photonic waveguides. These chips offer ultra-broadband wavelength operation, ultra-high timing resolution and ultra-fast response, and when used appropriately offer energy-efficient switching. In this presentation we review some all-optical functionalities based...... on silicon photonics. In particular we use nano-engineered silicon waveguides (nanowires) [1] enabling efficient phasematched four-wave mixing (FWM), cross-phase modulation (XPM) or self-phase modulation (SPM) for ultra-high-speed optical signal processing of ultra-high bit rate serial data signals. We show...

  6. Silicon photonic crystal nanostructures for refractive index sensing

    DEFF Research Database (Denmark)

    Dorfner, Dominic; Hürlimann, T.; Zabel, T.

    2008-01-01

    The authors present the fabrication and optical investigation of Silicon on Insulator photonic crystal drop-filters for use as refractive index sensors. Two types of defect nanocavities (L3 and H1-r) are embedded between two W1 photonic crystal waveguides to evanescently route light at the cavity...

  7. Two-dimensional photonic crystal polarizer modulated by silicon resin

    Science.gov (United States)

    Tan, Chunhua; Huang, Xuguang

    2007-11-01

    Photonic crystals(PCs)have many potential applications because of their ability to control light-wave propagation. In this paper, we theoretically investigate the tunability of light propagation in photonic crystal waveguides in two-dimensional photonic crystals with square lattices composed of heat-resistant silicon resin. Waveguides can be obtained by the infiltration of silicon resin into air regions in two-dimensional photonic crystals composed of air holes with square lattices of dielectric cylinders. The refractive index of silicon resin can be changed by manipulating the temperature of the sample. Numerical simulation by solving Maxwell's equations using the plane wave expansion(PWE) method shows that the band gaps can be continuously tuned by silicon resin, accordingly the light propagation in photonic crystal waveguides can be controlled. The band gap is analyzed in the temperature range of 20°C-120°C. In our work, the gap map for a square lattice of dielectric cylinders is also simulated. The method can separate TM- and TE-polarized modes in the waveguide. Such a mechanism of band gap adjustment should open up a new application for designing field-sensitive polarizer in photonic integrated circuits.

  8. Photonic and plasmonic guided modes in graphene-silicon photonic crystals

    DEFF Research Database (Denmark)

    Gu, Tingyi; Andryieuski, Andrei; Hao, Yufeng

    2016-01-01

    We report the results of systematic studies of plasmonic and photonic guided modes in large-area single-layer graphene integrated into a nanostructured silicon substrate. The interaction of light with graphene and substrate photonic crystals can be classified in distinct regimes of plasmonic...

  9. Photonic and Plasmonic Guided Modes in Graphene-Silicon Photonic Crystals

    DEFF Research Database (Denmark)

    Gu, Tingyi; Andryieuski, Andrei; Hao, Yufeng

    2015-01-01

    We report the results of systematic studies of plasmonic and photonic guided modes in large-area single-layer graphene integrated into a nanostructured silicon substrate. The interaction of light with graphene and substrate photonic crystals can be classified in distinct regimes depending...

  10. Observation of soliton compression in silicon photonic crystals

    Science.gov (United States)

    Blanco-Redondo, A.; Husko, C.; Eades, D.; Zhang, Y.; Li, J.; Krauss, T.F.; Eggleton, B.J.

    2014-01-01

    Solitons are nonlinear waves present in diverse physical systems including plasmas, water surfaces and optics. In silicon, the presence of two photon absorption and accompanying free carriers strongly perturb the canonical dynamics of optical solitons. Here we report the first experimental demonstration of soliton-effect pulse compression of picosecond pulses in silicon, despite two photon absorption and free carriers. Here we achieve compression of 3.7 ps pulses to 1.6 ps with soliton-based functionalities in complementary metal-oxide-semiconductor-compatible platforms. PMID:24423977

  11. Plasmonic and Photonic Modes Excitation in Graphene on Silicon Photonic Crystal Membrane

    DEFF Research Database (Denmark)

    Andryieuski, Andrei; Gu, Tingyi; Hao, Yufeng

    in the most important for applications plasmonic and photonic regimes are numerically investigated. We also demonstrate fabrication of photonic crystal membranes, high-quality transfer of large area chemically vapor deposited graphene on them and their comprehensive Raman, AFM and FTIR experimental....... Being deposited on a silicon photonic crystal membrane graphene serves as a highly promising system for modern optoelectronics with rich variety of possible regimes. Depending on the relation between the photonic crystal lattice constant and wavelengths (plasmonic, photonic and free-space) we identify...... four different interaction schemes. We refer to them as metamaterial, plasmonic, photonic and diffraction grating regimes based on the principle character of light interactions with the graphene deposited on the Si photonic crystal membrane. The optimal configurations for resonant excitation of modes...

  12. Integrated programmable photonic filter on the silicon -on- insulator platform

    DEFF Research Database (Denmark)

    Liao, Shasha; Ding, Yunhong; Peucheret, Christophe

    2014-01-01

    We propose and demonstrate a silicon - on - insulator (SOI) on - chip programmable filter based on a four - tap finite impulse response structure. The photonic filter is programmable thanks to amplitude and phase modulation of each tap controlled by thermal heater s. We further demonstrate...

  13. Graphene-on-silicon hybrid plasmonic-photonic integrated circuits

    Science.gov (United States)

    Xiao, Ting-Hui; Cheng, Zhenzhou; Goda, Keisuke

    2017-06-01

    Graphene surface plasmons (GSPs) have shown great potential in biochemical sensing, thermal imaging, and optoelectronics. To excite GSPs, several methods based on the near-field optical microscope and graphene nanostructures have been developed in the past few years. However, these methods suffer from their bulky setups and low GSP-excitation efficiency due to the short interaction length between free-space vertical excitation light and the atomic layer of graphene. Here we present a CMOS-compatible design of graphene-on-silicon hybrid plasmonic-photonic integrated circuits that achieve the in-plane excitation of GSP polaritons as well as localized surface plasmon (SP) resonance. By employing a suspended membrane slot waveguide, our design is able to excite GSP polaritons on a chip. Moreover, by utilizing a graphene nanoribbon array, we engineer the transmission spectrum of the waveguide by excitation of localized SP resonance. Our theoretical and computational study paves a new avenue to enable, modulate, and monitor GSPs on a chip, potentially applicable for the development of on-chip electro-optic devices.

  14. Ordered silicon nanostructures for silicon-based photonics devices

    Czech Academy of Sciences Publication Activity Database

    Fojtík, A.; Valenta, J.; Pelant, Ivan; Kálal, M.; Fiala, P.

    2007-01-01

    Roč. 5, Suppl. (2007), S250-S253 ISSN 1671-7694 R&D Projects: GA AV ČR IAA1010316 Grant - others:GA MŠk(CZ) ME 933 Institutional research plan: CEZ:AV0Z10100521 Keywords : nanocrystals * silicon * self-assembled monolayers Subject RIV: BM - Solid Matter Physics ; Magnetism

  15. Optical signal processing by silicon photonics

    CERN Document Server

    Ahmed, Jameel; Adeel, Freeha; Hussain, Ashiq

    2014-01-01

    The main objective of this book is to make respective graduate students understand the nonlinear effects inside SOI waveguide and possible applications of SOI waveguides in this emerging research area of optical fibre communication. This book focuses on achieving successful optical frequency shifting by Four Wave Mixing (FWM) in silicon-on-insulator (SOI) waveguide by exploiting a nonlinear phenomenon.

  16. An all-silicon single-photon source by unconventional photon blockade.

    Science.gov (United States)

    Flayac, Hugo; Gerace, Dario; Savona, Vincenzo

    2015-06-10

    The lack of suitable quantum emitters in silicon and silicon-based materials has prevented the realization of room temperature, compact, stable, and integrated sources of single photons in a scalable on-chip architecture, so far. Current approaches rely on exploiting the enhanced optical nonlinearity of silicon through light confinement or slow-light propagation, and are based on parametric processes that typically require substantial input energy and spatial footprint to reach a reasonable output yield. Here we propose an alternative all-silicon device that employs a different paradigm, namely the interplay between quantum interference and the third-order intrinsic nonlinearity in a system of two coupled optical cavities. This unconventional photon blockade allows to produce antibunched radiation at extremely low input powers. We demonstrate a reliable protocol to operate this mechanism under pulsed optical excitation, as required for device applications, thus implementing a true single-photon source. We finally propose a state-of-art implementation in a standard silicon-based photonic crystal integrated circuit that outperforms existing parametric devices either in input power or footprint area.

  17. Nanostructured Porous Silicon Photonic Crystal for Applications in the Infrared

    Directory of Open Access Journals (Sweden)

    G. Recio-Sánchez

    2012-01-01

    Full Text Available In the last decades great interest has been devoted to photonic crystals aiming at the creation of novel devices which can control light propagation. In the present work, two-dimensional (2D and three-dimensional (3D devices based on nanostructured porous silicon have been fabricated. 2D devices consist of a square mesh of 2 μm wide porous silicon veins, leaving 5×5 μm square air holes. 3D structures share the same design although multilayer porous silicon veins are used instead, providing an additional degree of modulation. These devices are fabricated from porous silicon single layers (for 2D structures or multilayers (for 3D structures, opening air holes in them by means of 1 KeV argon ion bombardment through the appropriate copper grids. For 2D structures, a complete photonic band gap for TE polarization is found in the thermal infrared range. For 3D structures, there are no complete band gaps, although several new partial gaps do exist in different high-symmetry directions. The simulation results suggest that these structures are very promising candidates for the development of low-cost photonic devices for their use in the thermal infrared range.

  18. Passive Temperature Stabilization of Silicon Photonic Devices Using Liquid Crystals

    Directory of Open Access Journals (Sweden)

    Joanna Ptasinski

    2014-03-01

    Full Text Available In this work we explore the negative thermo-optic properties of liquid crystal claddings for passive temperature stabilization of silicon photonic integrated circuits. Photonic circuits are playing an increasing role in communications and computing, but they suffer from temperature dependent performance variation. Most existing techniques aimed at compensation of thermal effects rely on power hungry Joule heating. We show that integrating a liquid crystal cladding helps to minimize the effects of a temperature dependent drift. The advantage of liquid crystals lies in their high negative thermo-optic coefficients in addition to low absorption at the infrared wavelengths.

  19. Dry-film polymer waveguide for silicon photonics chip packaging.

    Science.gov (United States)

    Hsu, Hsiang-Han; Nakagawa, Shigeru

    2014-09-22

    Polymer waveguide made by dry film process is demonstrated for silicon photonics chip packaging. With 8 μm × 11.5 μm core waveguide, little penalty is observed up to 25 Gbps before or after the light propagate through a 10-km long single-mode fiber (SMF). Coupling loss to SMF is 0.24 dB and 1.31 dB at the polymer waveguide input and output ends, respectively. Alignment tolerance for 0.5 dB loss increase is +/- 1.0 μm along both vertical and horizontal directions for the coupling from the polymer waveguide to SMF. The dry-film polymer waveguide demonstrates promising performance for silicon photonics chip packaging used in next generation optical multi-chip module.

  20. Silicon photonic processor of two-qubit entangling quantum logic

    Science.gov (United States)

    Santagati, R.; Silverstone, J. W.; Strain, M. J.; Sorel, M.; Miki, S.; Yamashita, T.; Fujiwara, M.; Sasaki, M.; Terai, H.; Tanner, M. G.; Natarajan, C. M.; Hadfield, R. H.; O'Brien, J. L.; Thompson, M. G.

    2017-11-01

    Entanglement is a fundamental property of quantum mechanics, and is a primary resource in quantum information systems. Its manipulation remains a central challenge in the development of quantum technology. In this work, we demonstrate a device which can generate, manipulate, and analyse two-qubit entangled states, using miniature and mass-manufacturable silicon photonics. By combining four photon-pair sources with a reconfigurable six-mode interferometer, embedding a switchable entangling gate, we generate two-qubit entangled states, manipulate their entanglement, and analyse them, all in the same silicon chip. Using quantum state tomography, we show how our source can produce a range of entangled and separable states, and how our switchable controlled-Z gate operates on them, entangling them or making them separable depending on its configuration.

  1. MITLL Silicon Integrated Photonics Process: Design Guide

    Science.gov (United States)

    2015-07-31

    30  8.  Revision History ...details for vias and wires are covered below in the design rules. If the designer plans to make use of resistor devices, we encourage them to contact MITLL...to request the most up-to-date resistivity information. There are no special rules on width or length of resistors , but of course relative

  2. Silicon photonic crystal all-optical logic gates

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Yulan [State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871 (China); Hu, Xiaoyong, E-mail: xiaoyonghu@pku.edu.cn [State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871 (China); Gong, Qihuang, E-mail: qhgong@pku.edu.cn [State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871 (China)

    2013-01-03

    All-optical logic gates, including OR, XOR, NOT, XNOR, and NAND gates, are realized theoretically in a two-dimensional silicon photonic crystal using the light beam interference effect. The ingenious photonic crystal waveguide component design, the precisely controlled optical path difference, and the elaborate device configuration ensure the simultaneous realization of five types of logic gate with low-power and a contrast ratio between the logic states of “1” and “0” as high as 20 dB. High power is not necessary for operation of these logic gate devices. This offers a simple and effective approach for the realization of integrated all-optical logic devices.

  3. On-chip photonic microsystem for optical signal processing based on silicon and silicon nitride platforms

    Science.gov (United States)

    Li, Yu; Li, Jiachen; Yu, Hongchen; Yu, Hai; Chen, Hongwei; Yang, Sigang; Chen, Minghua

    2018-04-01

    The explosive growth of data centers, cloud computing and various smart devices is limited by the current state of microelectronics, both in terms of speed and heat generation. Benefiting from the large bandwidth, promising low power consumption and passive calculation capability, experts believe that the integrated photonics-based signal processing and transmission technologies can break the bottleneck of microelectronics technology. In recent years, integrated photonics has become increasingly reliable and access to the advanced fabrication process has been offered by various foundries. In this paper, we review our recent works on the integrated optical signal processing system. We study three different kinds of on-chip signal processors and use these devices to build microsystems for the fields of microwave photonics, optical communications and spectrum sensing. The microwave photonics front receiver was demonstrated with a signal processing range of a full-band (L-band to W-band). A fully integrated microwave photonics transceiver without the on-chip laser was realized on silicon photonics covering the signal frequency of up 10 GHz. An all-optical orthogonal frequency division multiplexing (OFDM) de-multiplier was also demonstrated and used for an OFDM communication system with the rate of 64 Gbps. Finally, we show our work on the monolithic integrated spectrometer with a high resolution of about 20 pm at the central wavelength of 1550 nm. These proposed on-chip signal processing systems potential applications in the fields of radar, 5G wireless communication, wearable devices and optical access networks.

  4. Enhanced photoresponsivity in graphene-silicon slow-light photonic crystal waveguides

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Hao, E-mail: zhoufirst@scu.edu.cn, E-mail: tg2342@columbia.edu, E-mail: cheewei.wong@ucla.edu [College of Electronics and Information Engineering, Sichuan University, Chengdu 610065 (China); Optical Nanostructures Laboratory, Columbia University, New York, New York 10027 (United States); Gu, Tingyi, E-mail: zhoufirst@scu.edu.cn, E-mail: tg2342@columbia.edu, E-mail: cheewei.wong@ucla.edu; McMillan, James F. [Optical Nanostructures Laboratory, Columbia University, New York, New York 10027 (United States); Yu, Mingbin; Lo, Guoqiang; Kwong, Dim-Lee [Institute of Microelectronics, Singapore, Singapore 117685 (Singapore); Feng, Guoying; Zhou, Shouhuan [College of Electronics and Information Engineering, Sichuan University, Chengdu 610065 (China); Wong, Chee Wei, E-mail: zhoufirst@scu.edu.cn, E-mail: tg2342@columbia.edu, E-mail: cheewei.wong@ucla.edu [Optical Nanostructures Laboratory, Columbia University, New York, New York 10027 (United States); Mesoscopic Optics and Quantum Electronics Laboratory, University of California, Los Angeles, California 90095 (United States)

    2016-03-14

    We demonstrate the enhanced fast photoresponsivity in graphene hybrid structures by combining the ultrafast dynamics of graphene with improved light-matter interactions in slow-light photonic crystal waveguides. With a 200 μm interaction length, a 0.8 mA/W photoresponsivity is achieved in a graphene-silicon Schottky-like photodetector, with an operating bandwidth in excess of 5 GHz and wavelength range at least from 1480 nm to 1580 nm. Fourfold enhancement of the photocurrent is observed in the slow light region, compared to the wavelength far from the photonic crystal bandedge, for a chip-scale broadband fast photodetector.

  5. Polarization Beam Splitter Based on a Self-Collimation Michelson Interferometer in a Silicon Photonic Crystal

    International Nuclear Information System (INIS)

    Chen Xi-Yao; Lin Gui-Min; Li Jun-Jun; Xu Xiao-Fu; Jiang Jun-Zhen; Qiang Ze-Xuan; Qiu Yi-Shen; Li Hui

    2012-01-01

    A polarization beam splitter based on a self-collimation Michelson interferometer (SMI) in a hole-type silicon photonic crystal is proposed and numerically demonstrated. Utilizing the polarization dependence of the transmission spectra of the SMI and polarization peak matching method, the SMI can work as a polarization beam splitter (PBS) by selecting an appropriate path length difference in the structure. Based on its novel polarization beam splitting mechanics, the polarization extinction ratios (PERs) for TM and TE modes are as high as 18.4 dB and 24.3 dB, respectively. Since its dimensions are only several operating wavelengths, the PBS may have practical applications in photonic integrated circuits. (fundamental areas of phenomenology(including applications))

  6. Maximizing Photoluminescence Extraction in Silicon Photonic Crystal Slabs.

    Science.gov (United States)

    Mahdavi, Ali; Sarau, George; Xavier, Jolly; Paraïso, Taofiq K; Christiansen, Silke; Vollmer, Frank

    2016-04-26

    Photonic crystal modes can be tailored for increasing light matter interactions and light extraction efficiencies. These PhC properties have been explored for improving the device performance of LEDs, solar cells and precision biosensors. Tuning the extended band structure of 2D PhC provides a means for increasing light extraction throughout a planar device. This requires careful design and fabrication of PhC with a desirable mode structure overlapping with the spectral region of emission. We show a method for predicting and maximizing light extraction from 2D photonic crystal slabs, exemplified by maximizing silicon photoluminescence (PL). Systematically varying the lattice constant and filling factor, we predict the increases in PL intensity from band structure calculations and confirm predictions in micro-PL experiments. With the near optimal design parameters of PhC, we demonstrate more than 500-fold increase in PL intensity, measured near band edge of silicon at room temperature, an enhancement by an order of magnitude more than what has been reported.

  7. Label-free virus detection using silicon photonic microring resonators.

    Science.gov (United States)

    McClellan, Melinda S; Domier, Leslie L; Bailey, Ryan C

    2012-01-15

    Viruses represent a continual threat to humans through a number of mechanisms, which include disease, bioterrorism, and destruction of both plant and animal food resources. Many contemporary techniques used for the detection of viruses and viral infections suffer from limitations such as the need for extensive sample preparation or the lengthy window between infection and measurable immune response, for serological methods. In order to develop a method that is fast, cost-effective, and features reduced sample preparation compared to many other virus detection methods, we report the application of silicon photonic microring resonators for the direct, label-free detection of intact viruses in both purified samples as well as in a complex, real-world analytical matrix. As a model system, we demonstrate the quantitative detection of Bean pod mottle virus, a pathogen of great agricultural importance, with a limit of detection of 10 ng/mL. By simply grinding a small amount of leaf sample in buffer with a mortar and pestle, infected leaves can be identified over a healthy control with a total analysis time of less than 45 min. Given the inherent scalability and multiplexing capability of the semiconductor-based technology, we feel that silicon photonic microring resonators are well-positioned as a promising analytical tool for a number of viral detection applications. Copyright © 2011 Elsevier B.V. All rights reserved.

  8. Porous silicon photonic crystals for detection of infections

    Science.gov (United States)

    Gupta, B.; Guan, B.; Reece, P. J.; Gooding, J. J.

    2012-10-01

    In this paper we demonstrate the possibility of modifying porous silicon (PSi) particles with surface chemistry and immobilizing a biopolymer, gelatin for the detection of protease enzymes in solution. A rugate filter, a one-dimensional photonic crystal, is fabricated that exhibits a high-reflectivity optical resonance that is sensitive to small changes in the refractive index. To immobilize gelatin in the pores of the particles, the hydrogen-terminated silicon surface was first modified with an alkyne, 1,8-nonadiyne via hydrosilylation to protect the silicon surfaces from oxidation. This modification allows for further functionality to be added such as the coupling of gelatin. Exposure of the gelatin modified particles to the protease subtilisin in solution causes a change in the refractive index, resulting in a shift of the resonance to shorter wavelengths, indicating cleavage of organic material within the pores. The ability to monitor the spectroscopic properties of microparticles, and shifts in the optical signature due to changes in the refractive index of the material within the pore space, is demonstrated.

  9. Silicon-based photonic crystals fabricated using proton beam writing combined with electrochemical etching method.

    Science.gov (United States)

    Dang, Zhiya; Breese, Mark Bh; Recio-Sánchez, Gonzalo; Azimi, Sara; Song, Jiao; Liang, Haidong; Banas, Agnieszka; Torres-Costa, Vicente; Martín-Palma, Raúl José

    2012-07-23

    A method for fabrication of three-dimensional (3D) silicon nanostructures based on selective formation of porous silicon using ion beam irradiation of bulk p-type silicon followed by electrochemical etching is shown. It opens a route towards the fabrication of two-dimensional (2D) and 3D silicon-based photonic crystals with high flexibility and industrial compatibility. In this work, we present the fabrication of 2D photonic lattice and photonic slab structures and propose a process for the fabrication of 3D woodpile photonic crystals based on this approach. Simulated results of photonic band structures for the fabricated 2D photonic crystals show the presence of TE or TM gap in mid-infrared range.

  10. Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source.

    Science.gov (United States)

    Steidle, Jeffrey A; Fanto, Michael L; Preble, Stefan F; Tison, Christopher C; Howland, Gregory A; Wang, Zihao; Alsing, Paul M

    2017-04-04

    Silicon photonic chips have the potential to realize complex integrated quantum information processing circuits, including photon sources, qubit manipulation, and integrated single-photon detectors. Here, we present the key aspects of preparing and testing a silicon photonic quantum chip with an integrated photon source and two-photon interferometer. The most important aspect of an integrated quantum circuit is minimizing loss so that all of the generated photons are detected with the highest possible fidelity. Here, we describe how to perform low-loss edge coupling by using an ultra-high numerical aperture fiber to closely match the mode of the silicon waveguides. By using an optimized fusion splicing recipe, the UHNA fiber is seamlessly interfaced with a standard single-mode fiber. This low-loss coupling allows the measurement of high-fidelity photon production in an integrated silicon ring resonator and the subsequent two-photon interference of the produced photons in a closely integrated Mach-Zehnder interferometer. This paper describes the essential procedures for the preparation and characterization of high-performance and scalable silicon quantum photonic circuits.

  11. Empirical model description of photon path length for differential path length spectroscopy: combined effect of scattering and absorption

    NARCIS (Netherlands)

    Kanick, Stephen C.; Sterenborg, Henricus J. C. M.; Amelink, Arjen

    2008-01-01

    Differential path length spectroscopy (DPS) is a method of reflectance spectroscopy that utilizes a specialized fiber geometry to make the photon path length (tau) insensitive to variations in tissue optical properties over a wide range of absorption (mu(a)) and total scattering (mu(s))

  12. Hybrid Integration of Solid-State Quantum Emitters on a Silicon Photonic Chip.

    Science.gov (United States)

    Kim, Je-Hyung; Aghaeimeibodi, Shahriar; Richardson, Christopher J K; Leavitt, Richard P; Englund, Dirk; Waks, Edo

    2017-12-13

    Scalable quantum photonic systems require efficient single photon sources coupled to integrated photonic devices. Solid-state quantum emitters can generate single photons with high efficiency, while silicon photonic circuits can manipulate them in an integrated device structure. Combining these two material platforms could, therefore, significantly increase the complexity of integrated quantum photonic devices. Here, we demonstrate hybrid integration of solid-state quantum emitters to a silicon photonic device. We develop a pick-and-place technique that can position epitaxially grown InAs/InP quantum dots emitting at telecom wavelengths on a silicon photonic chip deterministically with nanoscale precision. We employ an adiabatic tapering approach to transfer the emission from the quantum dots to the waveguide with high efficiency. We also incorporate an on-chip silicon-photonic beamsplitter to perform a Hanbury-Brown and Twiss measurement. Our approach could enable integration of precharacterized III-V quantum photonic devices into large-scale photonic structures to enable complex devices composed of many emitters and photons.

  13. Porous silicon photonic devices using pulsed anodic etching of lightly doped silicon

    International Nuclear Information System (INIS)

    Escorcia-Garcia, J; Sarracino MartInez, O; Agarwal, V; Gracia-Jimenez, J M

    2009-01-01

    The fabrication of porous silicon photonic structures using lightly doped, p-type, silicon wafers (resistivity: 14-22 Ω cm) by pulsed anodic etching is reported. The optical properties have been found to be strongly dependent on the duty cycle and frequency of the applied current. All the interfaces of the single layered samples were digitally analysed by calculating the mean interface roughness (R m ). The interface roughness was found to be maximum for the sample with direct current. The use of a duty cycle above 50%, in a certain range of frequencies, is found to reduce the interface roughness. The optical properties of some microcavities and rugate filters are investigated from the optimized parameters of the duty cycle and frequency, using the current densities of 10, 90 and 150 mA cm -2 .

  14. Porous silicon photonic devices using pulsed anodic etching of lightly doped silicon

    Energy Technology Data Exchange (ETDEWEB)

    Escorcia-Garcia, J; Sarracino MartInez, O; Agarwal, V [CIICAP-Universidad Autonoma del Estado de Morelos, Av. Universidad 1001, Col Chamilpa, CP 62210, Cuernavaca, Morelos (Mexico); Gracia-Jimenez, J M, E-mail: vagarwal@uaem.m [Instituto de Fisica, BUAP, Apdo. Postal J-48, San Manuel, 72570 Puebla, Puebla (Mexico)

    2009-07-21

    The fabrication of porous silicon photonic structures using lightly doped, p-type, silicon wafers (resistivity: 14-22 OMEGA cm) by pulsed anodic etching is reported. The optical properties have been found to be strongly dependent on the duty cycle and frequency of the applied current. All the interfaces of the single layered samples were digitally analysed by calculating the mean interface roughness (R{sub m}). The interface roughness was found to be maximum for the sample with direct current. The use of a duty cycle above 50%, in a certain range of frequencies, is found to reduce the interface roughness. The optical properties of some microcavities and rugate filters are investigated from the optimized parameters of the duty cycle and frequency, using the current densities of 10, 90 and 150 mA cm{sup -2}.

  15. Ultrafast Silicon Photonics with Visible to Mid-Infrared Pumping of Silicon Nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Diroll, Benjamin T. [Center; Schramke, Katelyn S. [Department; Guo, Peijun [Center; Kortshagen, Uwe R. [Department; Schaller, Richard D. [Center; Department

    2017-09-15

    Dynamic optical control of infrared (IR) transparency and refractive index is achieved using boron-doped silicon nanocrystals excited with mid-IR optical pulses. Unlike previous silicon-based optical switches, large changes in transmittance are achieved without a fabricated structure by exploiting strong light coupling of the localized surface plasmon resonance (LSPR) produced from free holes of p-type silicon nanocrystals. The choice of optical excitation wavelength allows selectivity between hole heating and carrier generation through intraband or interband photoexcitation, respectively. Mid-IR optical pumping heats the free holes of p-Si nanocrystals to effective temperatures greater than 3500 K. Increases of the hole effective mass at high effective hole temperatures lead to a sub-picosecond change of the dielectric function resulting in a redshift of the LSPR, modulating mid-IR transmission by as much as 27% and increasing the index of refraction by more than 0.1 in the mid-IR. Low hole heat capacity dictates sub-picosecond hole cooling, substantially faster than carrier recombination, and negligible heating of the Si lattice, permitting mid-IR optical switching at terahertz repetition frequencies. Further, the energetic distribution of holes at high effective temperatures partially reverses the Burstein-Moss effect, permitting modulation of transmittance at telecommunications wavelengths. The results presented here show that doped silicon, particularly in micro- or nanostructures, is a promising dynamic metamaterial for ultrafast IR photonics.

  16. Experimental demonstration of reservoir computing on a silicon photonics chip

    Science.gov (United States)

    Vandoorne, Kristof; Mechet, Pauline; van Vaerenbergh, Thomas; Fiers, Martin; Morthier, Geert; Verstraeten, David; Schrauwen, Benjamin; Dambre, Joni; Bienstman, Peter

    2014-03-01

    In today’s age, companies employ machine learning to extract information from large quantities of data. One of those techniques, reservoir computing (RC), is a decade old and has achieved state-of-the-art performance for processing sequential data. Dedicated hardware realizations of RC could enable speed gains and power savings. Here we propose the first integrated passive silicon photonics reservoir. We demonstrate experimentally and through simulations that, thanks to the RC paradigm, this generic chip can be used to perform arbitrary Boolean logic operations with memory as well as 5-bit header recognition up to 12.5 Gbit s-1, without power consumption in the reservoir. It can also perform isolated spoken digit recognition. Our realization exploits optical phase for computing. It is scalable to larger networks and much higher bitrates, up to speeds >100 Gbit s-1. These results pave the way for the application of integrated photonic RC for a wide range of applications.

  17. Slow-light-enhanced energy efficiency for graphene microheaters on silicon photonic crystal waveguides.

    Science.gov (United States)

    Yan, Siqi; Zhu, Xiaolong; Frandsen, Lars Hagedorn; Xiao, Sanshui; Mortensen, N Asger; Dong, Jianji; Ding, Yunhong

    2017-02-09

    Slow light has been widely utilized to obtain enhanced nonlinearities, enhanced spontaneous emissions and increased phase shifts owing to its ability to promote light-matter interactions. By incorporating a graphene on a slow-light silicon photonic crystal waveguide, here we experimentally demonstrate an energy-efficient graphene microheater with a tuning efficiency of 1.07 nmmW -1 and power consumption per free spectral range of 3.99 mW. The rise and decay times (10-90%) are only 750 and 525 ns, which, to the best of our knowledge, are the fastest reported response times for microheaters in silicon photonics. The corresponding figure of merit of the device is 2.543 nW s, one order of magnitude better than results reported in previous studies. The influence of the length and shape of the graphene heater to the tuning efficiency is further investigated, providing valuable guidelines for enhancing the tuning efficiency of the graphene microheater.

  18. Compact silicon photonic wavelength-tunable laser diode with ultra-wide wavelength tuning range

    Energy Technology Data Exchange (ETDEWEB)

    Kita, Tomohiro, E-mail: tkita@ecei.tohoku.ac.jp; Tang, Rui; Yamada, Hirohito [Graduate School of Engineering, Tohoku University, 6-6-05 Aramaki-Aza-Aoba, Aoba-ku, Sendai 980-8579 (Japan)

    2015-03-16

    We present a wavelength-tunable laser diode with a 99-nm-wide wavelength tuning range. It has a compact wavelength-tunable filter with high wavelength selectivity fabricated using silicon photonics technology. The silicon photonic wavelength-tunable filter with wide wavelength tuning range was realized using two ring resonators and an asymmetric Mach-Zehnder interferometer. The wavelength-tunable laser diode fabricated by butt-joining a silicon photonic filter and semiconductor optical amplifier shows stable single-mode operation over a wide wavelength range.

  19. Compact silicon photonic wavelength-tunable laser diode with ultra-wide wavelength tuning range

    International Nuclear Information System (INIS)

    Kita, Tomohiro; Tang, Rui; Yamada, Hirohito

    2015-01-01

    We present a wavelength-tunable laser diode with a 99-nm-wide wavelength tuning range. It has a compact wavelength-tunable filter with high wavelength selectivity fabricated using silicon photonics technology. The silicon photonic wavelength-tunable filter with wide wavelength tuning range was realized using two ring resonators and an asymmetric Mach-Zehnder interferometer. The wavelength-tunable laser diode fabricated by butt-joining a silicon photonic filter and semiconductor optical amplifier shows stable single-mode operation over a wide wavelength range

  20. Monolithic nanoscale photonics-electronics integration in silicon and other group IV elements

    CERN Document Server

    Radamson, Henry

    2014-01-01

    Silicon technology is evolving rapidly, particularly in board-to-board or chip-to chip applications. Increasingly, the electronic parts of silicon technology will carry out the data processing, while the photonic parts take care of the data communication. For the first time, this book describes the merging of photonics and electronics in silicon and other group IV elements. It presents the challenges, the limitations, and the upcoming possibilities of these developments. The book describes the evolution of CMOS integrated electronics, status and development, and the fundamentals of silicon p

  1. Experimental Demonstration of 7 Tb/s Switching Using Novel Silicon Photonic Integrated Circuit

    DEFF Research Database (Denmark)

    Ding, Yunhong; Kamchevska, Valerija; Dalgaard, Kjeld

    2016-01-01

    We demonstrate BER performance <10^-9 for a 1 Tb/s/core transmission over 7-core fiber and SDM switching using a novel silicon photonic integrated circuit composed of a 7x7 fiber switch and low loss SDM couplers.......We demonstrate BER performance Tb/s/core transmission over 7-core fiber and SDM switching using a novel silicon photonic integrated circuit composed of a 7x7 fiber switch and low loss SDM couplers....

  2. Microwave photonic phase shifter based on tunable silicon-on-insulator microring resonator

    DEFF Research Database (Denmark)

    Pu, Minhao; Liu, Liu; Xue, Weiqi

    2010-01-01

    We demonstrate a microwave photonic phase shifter based on an electrically tunable silicon-on-insulator microring resonator. A continuously tunable phase shift of up to 315° at a microwave frequency of 15GHz is obtained.......We demonstrate a microwave photonic phase shifter based on an electrically tunable silicon-on-insulator microring resonator. A continuously tunable phase shift of up to 315° at a microwave frequency of 15GHz is obtained....

  3. Ultra-compact polarization rotation in integrated silicon photonics using digital metamaterials.

    Science.gov (United States)

    Majumder, Apratim; Shen, Bing; Polson, Randy; Menon, Rajesh

    2017-08-21

    Polarization controlling devices such as polarization splitters and rotators are critical elements in integrated-photonic circuits that function via polarization-diversity schemes. Here, we present the design of an ultra-compact nanophotonic-polarization rotator (NPR) that rotates the polarization state from TE to TM with a simulated extinction ratio of 23dB over a coupling length of 5µm and an operating bandwidth of 40nm. This all-silicon device can be fabricated in a single lithography step and we have fabricated and characterized a preliminary device exhibiting 9dB extinction ratio. To emphasize the generality of our methodology, we also designed a NPR that can rotate the polarization state from TM to TE as well. A small device footprint is enabled by the evanescent coupling of guided modes enabled by computationally designed digital metamaterials.

  4. Tuning of the Optical Properties in Photonic Crystals Made of Macroporous Silicon

    Directory of Open Access Journals (Sweden)

    Ralf B. Wehrspohn

    2008-06-01

    Full Text Available It is well known that robust and reliable photonic crystal structures can be manufactured with very high precision by electrochemical etching of silicon wafers, which results in two- and three-dimensional photonic crystals made of macroporous silicon. However, tuning of the photonic properties is necessary in order to apply these promising structures in integrated optical devices. For this purpose, different effects have been studied, such as the infiltration with addressable dielectric liquids (liquid crystals, the utilization of Kerr-like nonlinearities of the silicon, or free-charge carrier injection by means of linear (one-photon and nonlinear (two-photon absorptions. The present article provides a review, critical discussion, and perspectives about state-of-the-art tuning capabilities.

  5. Mid-infrared characterization of two-dimensional photonic crystal slabs fabricated in silicon with laser interference lithography

    NARCIS (Netherlands)

    Prodan, L.G.

    2008-01-01

    The goal of the present work was to perform mid-infrared characterization of two dimensional photonic crystal slabs fabricated in silicon with laser interference lithography. A two-dimensional (2D) silicon photonic crystal (PhC), which is designed to provide a modified dispersion for photon energies

  6. Silicon-based photonic integrated circuit for label-free biosensing

    OpenAIRE

    Samusenko, Alina

    2016-01-01

    Silicon-based Photonic Integrated Circuit (PIC) is a device that integrates several optical components using the mature semiconductor technology platform, developed through years for the needs of electronic integrated circuits. In recent years, silicon PICs have been demonstrated as a powerful platform for biosensing systems - devices which play an omnipresent role in such essential life aspects as health care, environmental monitoring, food safety, etc. The growing importance of silicon phot...

  7. Silicon-germanium and platinum silicide nanostructures for silicon based photonics

    Science.gov (United States)

    Storozhevykh, M. S.; Dubkov, V. P.; Arapkina, L. V.; Chizh, K. V.; Mironov, S. A.; Chapnin, V. A.; Yuryev, V. A.

    2017-05-01

    This paper reports a study of two types of silicon based nanostructures prospective for applications in photonics. The first ones are Ge/Si(001) structures forming at room temperature and reconstructing after annealing at 600°C. Germanium, being deposited from a molecular beam at room temperature on the Si(001) surface, forms a thin granular film composed of Ge particles with sizes of a few nanometers. A characteristic feature of these films is that they demonstrate signs of the 2 x 1 structure in their RHEED patterns. After short-term annealing at 600°C under the closed system conditions, the granular films reconstruct to heterostructures consisting of a Ge wetting layer and oval clusters of Ge. A mixed type c(4x2) + p(2x2) reconstruction typical to the low-temperature MBE (Tgr class of materials is one of the friendliest to silicon technology. But as silicide film thickness reaches a few nanometers, low resistivity becomes of primary importance. Pt3Si has the lowest sheet resistance among the Pt silicides. However, the development of a process of thin Pt3Si films formation is a challenging task. This paper describes formation of a thin Pt3Si/Pt2Si structures at room temperature on poly-Si films. Special attention is paid upon formation of poly-Si and amorphous Si films on Si3N4 substrates at low temperatures.

  8. Smart Photonic Carbon Brush: FBG Length as Sensing Parameter

    Science.gov (United States)

    Morozov, O. G.; Nureev, I. I.; Kuznetsov, A. A.; Artemiev, V. I.

    2018-04-01

    This article deals with problem of carbon brush’s length measurements. There are many applications where regular inspection is not feasible because of a number of factors including, for example, time, labor, cost and disruptions due to down time. Thus, there is a need for a system that can monitor the brush’s length to calculate it’s wear rate, while the component is in operation or without removing of the component from its operational position. We propose a novel method for characterization of carbon brush’s length. This method based on the usage of advantages of the multiplicative response of FBGs and FBG arrays: spectral parameters depend on several aspects, such as grating’s period, refractive index, it’s physical length and so on. We are the first, in our point of view, who proposed to use third parameter for sensing application and prospectively all three parameters for complex measurement: the change of FBG’s length is used to measure length of the brush and it’s wear rate, grating’s central wavelength shift for temperature (due to refractive index change) and mechanical stress (due to grating’s period variations) measurements. The results of modelling and experiments are presented.

  9. Photon-Enhanced Thermionic Emission in Cesiated p-Type and n-Type Silicon

    DEFF Research Database (Denmark)

    Reck, Kasper; Dionigi, Fabio; Hansen, Ole

    2014-01-01

    Photon-enhanced thermionic emission (PETE) is a relatively new concept for high efficiency solar cells that utilize not only the energy of electrons excited across the band gap by photons, as in conventional photovoltaic solar cells, but also the energy usual lost to thermalization of the excited...... to ideal band gap. The work function of silicon is, however, too high for practical PETE implementations. A well-known method for lowering the work function of silicon (and other materials) is to apply approximately a monolayer of cesium to the silicon surface. We present the first measurements of PETE...

  10. Why I am optimistic about the silicon-photonic route to quantum computing

    Directory of Open Access Journals (Sweden)

    Terry Rudolph

    2017-03-01

    Full Text Available This is a short overview explaining how building a large-scale, silicon-photonic quantum computer has been reduced to the creation of good sources of 3-photon entangled states (and may simplify further. Given such sources, each photon needs to pass through a small, constant, number of components, interfering with at most 2 other spatially nearby photons, and current photonics engineering has already demonstrated the manufacture of thousands of components on two-dimensional semiconductor chips with performance that, once scaled up, allows the creation of tens of thousands of photons entangled in a state universal for quantum computation. At present the fully integrated, silicon-photonic architecture we envisage involves creating the required entangled states by starting with single-photons produced non-deterministically by pumping silicon waveguides (or cavities combined with on-chip filters and nanowire superconducting detectors to herald that a photon has been produced. These sources are multiplexed into being near-deterministic, and the single photons then passed through an interferometer to non-deterministically produce small entangled states—necessarily multiplexed to near-determinism again. This is followed by a “ballistic” scattering of the small-scale entangled photons through an interferometer such that some photons are detected, leaving the remainder in a large-scale entangled state which is provably universal for quantum computing implemented by single-photon measurements. There are a large number of questions regarding the optimum ways to make and use the final cluster state, dealing with static imperfections, constructing the initial entangled photon sources and so on, that need to be investigated before we can aim for millions of qubits capable of billions of computational time steps. The focus in this article is on the theoretical side of such questions.

  11. High-dimensional quantum key distribution based on multicore fiber using silicon photonic integrated circuits

    DEFF Research Database (Denmark)

    Ding, Yunhong; Bacco, Davide; Dalgaard, Kjeld

    2017-01-01

    is intrinsically limited to 1 bit/photon. Here we propose and experimentally demonstrate, for the first time, a high-dimensional quantum key distribution protocol based on space division multiplexing in multicore fiber using silicon photonic integrated lightwave circuits. We successfully realized three mutually......-dimensional quantum states, and enables breaking the information efficiency limit of traditional quantum key distribution protocols. In addition, the silicon photonic circuits used in our work integrate variable optical attenuators, highly efficient multicore fiber couplers, and Mach-Zehnder interferometers, enabling...... manipulating high-dimensional quantum states in a compact and stable manner. Our demonstration paves the way to utilize state-of-the-art multicore fibers for noise tolerance high-dimensional quantum key distribution, and boost silicon photonics for high information efficiency quantum communications....

  12. Ultra-High Capacity Silicon Photonic Interconnects through Spatial Multiplexing

    Science.gov (United States)

    Chen, Christine P.

    The market for higher data rate communication is driving the semiconductor industry to develop new techniques of writing at smaller scales, while continuing to scale bandwidth at low power consumption. Silicon photonic (SiPh) devices offer a potential solution to the electronic interconnect bandwidth bottleneck. SiPh leverages the technology commensurate of decades of fabrication development with the unique functionality of next-generation optical interconnects. Finer fabrication techniques have allowed for manufacturing physical characteristics of waveguide structures that can support multiple modes in a single waveguide. By refining modal characteristics in photonic waveguide structures, through mode multiplexing with the asymmetric y-junction and microring resonator, higher aggregate data bandwidth is demonstrated via various combinations of spatial multiplexing, broadening applications supported by the integrated platform. The main contributions of this dissertation are summarized as follows. Experimental demonstrations of new forms of spatial multiplexing combined together exhibit feasibility of data transmission through mode-division multiplexing (MDM), mode-division and wavelength-division multiplexing (MDM-WDM), and mode-division and polarization-division multiplexing (MDM-PDM) through a C-band, Si photonic platform. Error-free operation through mode multiplexers and demultiplexers show how data can be viably scaled on multiple modes and with existing spatial domains simultaneously. Furthermore, we explore expanding device channel support from two to three arms. Finding that a slight mismatch in the third arm can increase crosstalk contributions considerably, especially when increasing data rate, we explore a methodical way to design the asymmetric y-junction device by considering its angles and multiplexer/demultiplexer arm width. By taking into consideration device fabrication variations, we turn towards optimizing device performance post

  13. Optimization and applications of planar silicon-based photonic crystal devices

    DEFF Research Database (Denmark)

    Borel, Peter Ingo; Frandsen, Lars Hagedorn; Burgos Leon, Juan

    2005-01-01

    Very low propagation losses in straight planar photonic crystal waveguides have previously been reported. A next natural step is to add functionality to the photonic crystal waveguides and create ultra compact optical components. We have designed and fabricated such structures in a silicon-on-insulator...... such as topology optimization. We have also investigated a new device concept for coarse wavelength division de-multiplexing based on planar photonic crystal waveguides. The filtering of the wavelength channels has been realized by shifting the cut-off frequency of the fundamental photonic band gap mode...

  14. Bandwidth-adaptable silicon photonic differentiator employing a slow light effect

    DEFF Research Database (Denmark)

    Yan, Siqi; Cheng, Ziwei; Frandsen, Lars Hagedorn

    2017-01-01

    A photonic differentiator (DIFF) plays a crucial role in photonic circuits. Despite the fact that a DIFF having a tera-hertz bandwidth has been reported, the practical bandwidth is limited to being a bandpass response. In this Letter, we propose the concept of a bandwidth-adaptable DIFF, which...... exploits the slow light effect in a photonic crystal waveguide (PhCW) to overcome the inherent bandwidth limitation of current photonic DIFFs. We fabricated a PhCW Mach-Zehnder interferometer (PhCW-MZI) on the silicon-onisolator material platform to validate our concept. Input Gaussian pulses with full...

  15. Prediction model for the diffusion length in silicon-based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Cheknane, A [Laboratoire d' Etude et Developpement des Materiaux Semiconducteurs et Dielectrques, Universite Amar Telidji de Laghouat, BP 37G, Laghouat 03000 (Algeria); Benouaz, T, E-mail: cheknanali@yahoo.co [Laboratoire de Modelisation, Universite Abou BakarBelkaid de Tlemcen Algerie (Algeria)

    2009-07-15

    A novel approach to compute diffusion lengths in solar cells is presented. Thus, a simulation is done; it aims to give computational support to the general development of a neural networks (NNs), which is a very powerful predictive modelling technique used to predict the diffusion length in mono-crystalline silicon solar cells. Furthermore, the computation of the diffusion length and the comparison with measurement data, using the infrared injection method, are presented and discussed.

  16. Optical properties of one-dimensional photonic crystals obtained by micromatchining silicon (a review)

    Science.gov (United States)

    Tolmachev, V. A.

    2017-04-01

    The theoretical and experimental investigations of photonic band gaps in one-dimensional photonic crystals created by micromatchining silicon, which have been performed by the author as part of his doctoral dissertation, are presented. The most important result of the work is the development of a method of modeling photonic crystals based on photonic band gap maps plotted in structure-property coordinates, which can be used with any optical materials and in any region of electromagnetic radiation, and also for nonperiodic structures. This method made it possible to realize the targeted control of the optical contrast of photonic crystals and to predict the optical properties of optical heterostructures and three-component and composite photonic crystals. The theoretical findings were experimentally implemented using methods of micromatchining silicon, which can be incorporated into modern technological lines for the production of microchips. In the IR spectra of a designed and a fabricated optical heterostructure (a composite photonic crystal), extended bands with high reflectivities were obtained. In a Si-based three-component photonic crystal, broad transmission bands and photonic band gaps in the middle IR region have been predicted and experimentally demonstrated for the first time. Si-liquid crystal periodic structures with electric-field tunable photonic band-gap edges have been investigated. The one-dimensional photonic crystals developed based on micromatchining silicon can serve as a basis for creating components of optical processors, as well as highly sensitive chemical and biological sensors in a wide region of the IR spectrum (from 1 to 20 μm) for lab-on-a-chip applications.

  17. Nonlinear Silicon Photonic Signal Processing Devices for Future Optical Networks

    Directory of Open Access Journals (Sweden)

    Cosimo Lacava

    2017-01-01

    Full Text Available In this paper, we present a review on silicon-based nonlinear devices for all optical nonlinear processing of complex telecommunication signals. We discuss some recent developments achieved by our research group, through extensive collaborations with academic partners across Europe, on optical signal processing using silicon-germanium and amorphous silicon based waveguides as well as novel materials such as silicon rich silicon nitride and tantalum pentoxide. We review the performance of four wave mixing wavelength conversion applied on complex signals such as Differential Phase Shift Keying (DPSK, Quadrature Phase Shift Keying (QPSK, 16-Quadrature Amplitude Modulation (QAM and 64-QAM that dramatically enhance the telecom signal spectral efficiency, paving the way to next generation terabit all-optical networks.

  18. Ultra-high-speed wavelength conversion in a silicon photonic chip

    DEFF Research Database (Denmark)

    Hu, Hao; Ji, Hua; Galili, Michael

    2011-01-01

    We have successfully demonstrated all-optical wavelength conversion of a 640-Gbit/s line-rate return-to-zero differential phase-shift keying (RZ-DPSK) signal based on low-power four wave mixing (FWM) in a silicon photonic chip with a switching energy of only ~110 fJ/bit. The waveguide dispersion...... of the silicon nanowire is nano-engineered to optimize phase matching for FWM and the switching power used for the signal processing is low enough to reduce nonlinear absorption from twophoton- absorption (TPA). These results demonstrate that high-speed wavelength conversion is achievable in silicon chips...... with high data integrity and indicate that high-speed operation can be obtained at moderate power levels where nonlinear absorption due to TPA and free-carrier absorption (FCA) is not detrimental. This demonstration can potentially enable highspeed optical networks on a silicon photonic chip....

  19. Hydrogenated amorphous silicon nitride photonic crystals for improved-performance surface electromagnetic wave biosensors.

    Science.gov (United States)

    Sinibaldi, Alberto; Descrovi, Emiliano; Giorgis, Fabrizio; Dominici, Lorenzo; Ballarini, Mirko; Mandracci, Pietro; Danz, Norbert; Michelotti, Francesco

    2012-10-01

    We exploit the properties of surface electromagnetic waves propagating at the surface of finite one dimensional photonic crystals to improve the performance of optical biosensors with respect to the standard surface plasmon resonance approach. We demonstrate that the hydrogenated amorphous silicon nitride technology is a versatile platform for fabricating one dimensional photonic crystals with any desirable design and operating in a wide wavelength range, from the visible to the near infrared. We prepared sensors based on photonic crystals sustaining either guided modes or surface electromagnetic waves, also known as Bloch surface waves. We carried out for the first time a direct experimental comparison of their sensitivity and figure of merit with surface plasmon polaritons on metal layers, by making use of a commercial surface plasmon resonance instrument that was slightly adapted for the experiments. Our measurements demonstrate that the Bloch surface waves on silicon nitride photonic crystals outperform surface plasmon polaritons by a factor 1.3 in terms of figure of merit.

  20. On-Chip All-Optical Switching and Memory by Silicon Photonic Crystal Nanocavities

    Directory of Open Access Journals (Sweden)

    Masaya Notomi

    2008-01-01

    Full Text Available We review our recent studies on all-optical switching and memory operations based on thermo-optic and carrier-plasma nonlinearities both induced by two-photon absorption in silicon photonic crystal nanocavities. Owing to high-Q and small volume of these photonic crystal cavities, we have demonstrated that the switching power can be largely reduced. In addition, we demonstrate that the switching time is also reduced in nanocavity devices because of their short diffusion time. These features are important for all-optical nonlinear processing in silicon photonics technologies, since silicon is not an efficient optical nonlinear material. We discuss the effect of the carrier diffusion process in our devices, and demonstrate improvement in terms of the response speed by employing ion-implantation process. Finally, we show that coupled bistable devices lead to all-optical logic, such as flip-flop operation. These results indicate that a nanocavity-based photonic crystal platform on a silicon chip may be a promising candidate for future on-chip all-optical information processing in a largely integrated fashion.

  1. PECASE: All-Optical Photonic Integrated Circuits in Silicon

    Science.gov (United States)

    2011-01-14

    linear and nonlinear optical properties of silicon micro/ nano cavities for chip-scale sensing and signal processing. To achieve this goal, in what...enhancing the linear and nonlinear optical properties of silicon micro/ nano cavities for chip- scale sensing and signal processing. To achieve this...During the TIRS measurements, the samples are placed on a TEC -equipped stage with a built-in thermistor to monitor the temperature. The transmission

  2. High-performance silicon photonics technology for telecommunications applications

    International Nuclear Information System (INIS)

    Yamada, Koji; Tsuchizawa, Tai; Nishi, Hidetaka; Kou, Rai; Hiraki, Tatsurou; Takeda, Kotaro; Fukuda, Hiroshi; Yamamoto, Tsuyoshi; Ishikawa, Yasuhiko; Wada, Kazumi

    2014-01-01

    By way of a brief review of Si photonics technology, we show that significant improvements in device performance are necessary for practical telecommunications applications. In order to improve device performance in Si photonics, we have developed a Si-Ge-silica monolithic integration platform, on which compact Si-Ge–based modulators/detectors and silica-based high-performance wavelength filters are monolithically integrated. The platform features low-temperature silica film deposition, which cannot damage Si-Ge–based active devices. Using this platform, we have developed various integrated photonic devices for broadband telecommunications applications. (review)

  3. High-performance silicon photonics technology for telecommunications applications.

    Science.gov (United States)

    Yamada, Koji; Tsuchizawa, Tai; Nishi, Hidetaka; Kou, Rai; Hiraki, Tatsurou; Takeda, Kotaro; Fukuda, Hiroshi; Ishikawa, Yasuhiko; Wada, Kazumi; Yamamoto, Tsuyoshi

    2014-04-01

    By way of a brief review of Si photonics technology, we show that significant improvements in device performance are necessary for practical telecommunications applications. In order to improve device performance in Si photonics, we have developed a Si-Ge-silica monolithic integration platform, on which compact Si-Ge-based modulators/detectors and silica-based high-performance wavelength filters are monolithically integrated. The platform features low-temperature silica film deposition, which cannot damage Si-Ge-based active devices. Using this platform, we have developed various integrated photonic devices for broadband telecommunications applications.

  4. Integrating photonics with silicon nanoelectronics for the next generation of systems on a chip.

    Science.gov (United States)

    Atabaki, Amir H; Moazeni, Sajjad; Pavanello, Fabio; Gevorgyan, Hayk; Notaros, Jelena; Alloatti, Luca; Wade, Mark T; Sun, Chen; Kruger, Seth A; Meng, Huaiyu; Al Qubaisi, Kenaish; Wang, Imbert; Zhang, Bohan; Khilo, Anatol; Baiocco, Christopher V; Popović, Miloš A; Stojanović, Vladimir M; Ram, Rajeev J

    2018-04-01

    Electronic and photonic technologies have transformed our lives-from computing and mobile devices, to information technology and the internet. Our future demands in these fields require innovation in each technology separately, but also depend on our ability to harness their complementary physics through integrated solutions 1,2 . This goal is hindered by the fact that most silicon nanotechnologies-which enable our processors, computer memory, communications chips and image sensors-rely on bulk silicon substrates, a cost-effective solution with an abundant supply chain, but with substantial limitations for the integration of photonic functions. Here we introduce photonics into bulk silicon complementary metal-oxide-semiconductor (CMOS) chips using a layer of polycrystalline silicon deposited on silicon oxide (glass) islands fabricated alongside transistors. We use this single deposited layer to realize optical waveguides and resonators, high-speed optical modulators and sensitive avalanche photodetectors. We integrated this photonic platform with a 65-nanometre-transistor bulk CMOS process technology inside a 300-millimetre-diameter-wafer microelectronics foundry. We then implemented integrated high-speed optical transceivers in this platform that operate at ten gigabits per second, composed of millions of transistors, and arrayed on a single optical bus for wavelength division multiplexing, to address the demand for high-bandwidth optical interconnects in data centres and high-performance computing 3,4 . By decoupling the formation of photonic devices from that of transistors, this integration approach can achieve many of the goals of multi-chip solutions 5 , but with the performance, complexity and scalability of 'systems on a chip' 1,6-8 . As transistors smaller than ten nanometres across become commercially available 9 , and as new nanotechnologies emerge 10,11 , this approach could provide a way to integrate photonics with state-of-the-art nanoelectronics.

  5. Electrical control of silicon photonic crystal cavity by graphene.

    Science.gov (United States)

    Majumdar, Arka; Kim, Jonghwan; Vuckovic, Jelena; Wang, Feng

    2013-02-13

    The efficient conversion of an electrical signal to an optical signal in nanophotonics enables solid state integration of electronics and photonics. The combination of graphene with photonic crystals is promising for electro-optic modulation. In this paper, we demonstrate that by electrostatic gating a single layer of graphene on top of a photonic crystal cavity, the cavity resonance can be changed significantly. A ~2 nm change in the cavity resonance line width and almost 400% (6 dB) change in resonance reflectivity is observed. In addition, our analysis shows that a graphene-photonic crystal device can potentially be useful for a high speed and low power absorptive and refractive modulator, while maintaining a small physical footprint.

  6. Two-dimensional photonic crystal slab with embedded silicon nanocrystals: efficient photoluminescence extraction

    Czech Academy of Sciences Publication Activity Database

    Ondič, Lukáš; Varga, Marián; Hruška, Karel; Kromka, Alexander; Herynková, Kateřina; Hönerlage, B.; Pelant, Ivan

    2013-01-01

    Roč. 102, č. 25 (2013), "251111-1"-"251111-4" ISSN 0003-6951 R&D Projects: GA ČR(CZ) GBP108/12/G108 Institutional support: RVO:68378271 Keywords : photonic crystal * silicon nanocrystals * photoluminescence Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.515, year: 2013

  7. Design, analysis, and transmission system performance of a 41 GHz silicon photonic modulator.

    Science.gov (United States)

    Patel, David; Ghosh, Samir; Chagnon, Mathieu; Samani, Alireza; Veerasubramanian, Venkat; Osman, Mohamed; Plant, David V

    2015-06-01

    The design and characterization of a slow-wave series push-pull traveling wave silicon photonic modulator is presented. At 2 V and 4 V reverse bias, the measured -3 dB electro-optic bandwidth of the modulator with an active length of 4 mm are 38 GHz and 41 GHz, respectively. Open eye diagrams are observed up to bitrates of 60 Gbps without any form of signal processing, and up to 70 Gbps with passive signal processing to compensate for the test equipment. With the use of multi-level amplitude modulation formats and digital-signal-processing, the modulator is shown to operate below a hard-decision forward error-correction threshold of 3.8×10-3 at bitrates up to 112 Gbps over 2 km of single mode optical fiber using PAM-4, and over 5 km of optical fiber with PAM-8. Energy consumed solely by the modulator is also estimated for different modulation cases.

  8. Enhancing the brightness of electrically driven single-photon sources using color centers in silicon carbide

    Science.gov (United States)

    Khramtsov, Igor A.; Vyshnevyy, Andrey A.; Fedyanin, Dmitry Yu.

    2018-03-01

    Practical applications of quantum information technologies exploiting the quantum nature of light require efficient and bright true single-photon sources which operate under ambient conditions. Currently, point defects in the crystal lattice of diamond known as color centers have taken the lead in the race for the most promising quantum system for practical non-classical light sources. This work is focused on a different quantum optoelectronic material, namely a color center in silicon carbide, and reveals the physics behind the process of single-photon emission from color centers in SiC under electrical pumping. We show that color centers in silicon carbide can be far superior to any other quantum light emitter under electrical control at room temperature. Using a comprehensive theoretical approach and rigorous numerical simulations, we demonstrate that at room temperature, the photon emission rate from a p-i-n silicon carbide single-photon emitting diode can exceed 5 Gcounts/s, which is higher than what can be achieved with electrically driven color centers in diamond or epitaxial quantum dots. These findings lay the foundation for the development of practical photonic quantum devices which can be produced in a well-developed CMOS compatible process flow.

  9. Highly efficient silicon solar cells designed with photon trapping micro/nano structures

    Science.gov (United States)

    Bartolo-Perez, Cesar; Gao, Yang; Cansizoglu, Hilal; Ghandiparsi, Soroush; Kaya, Ahmet; Mayet, Ahmed; Ponizovskaya Devine, Ekaterina; Yamada, Toshishige; Elrefaie, Aly; Wang, Shih-Yuan; Islam, M. Saif

    2017-08-01

    Crystalline silicon (c-Si) remains the most commonly used material for photovoltaic (PV) cells in the current commercial solar cells market. However, current technology requires "thick" silicon due to the relative weak absorption of Si in the solar spectrum. We demonstrate several CMOS compatible fabrication techniques including dry etch, wet etch and their combination to create different photon trapping micro/nanostructures on very thin c-silicon surface for light harvesting of PVs. Both, the simulation and experimental results show that these photon trapping structures are responsible for the enhancement of the visible light absorption which leads to improved efficiency of the PVs. Different designs of micro/nanostructures via different fabrication techniques are correlated with the efficiencies of the PVs. Our method can also drastically reduce the thickness of the c-Si PVs, and has great potential to reduce the cost, and lead to highly efficient and flexible PVs.

  10. Optimization of metallic microheaters for high-speed reconfigurable silicon photonics.

    Science.gov (United States)

    Atabaki, A H; Shah Hosseini, E; Eftekhar, A A; Yegnanarayanan, S; Adibi, A

    2010-08-16

    The strong thermooptic effect in silicon enables low-power and low-loss reconfiguration of large-scale silicon photonics. Thermal reconfiguration through the integration of metallic microheaters has been one of the more widely used reconfiguration techniques in silicon photonics. In this paper, structural and material optimizations are carried out through heat transport modeling to improve the reconfiguration speed of such devices, and the results are experimentally verified. Around 4 micros reconfiguration time are shown for the optimized structures. Moreover, sub-microsecond reconfiguration time is experimentally demonstrated through the pulsed excitation of the microheaters. The limitation of this pulsed excitation scheme is also discussed through an accurate system-level model developed for the microheater response.

  11. Development of hybrid photon detectors with integrated silicon pixel readout for the RICH counters of LHCb

    CERN Document Server

    Alemi, M; Formenti, F; Gys, Thierry; Piedigrossi, D; Puertolas, D; Rosso, E; Snoeys, W; Wyllie, Ken H

    1999-01-01

    We report on the ongoing work towards a hybrid photon detector with integrated silicon pixel readout for the ring imaging Cherenkov detectors of the LHCb experiment at the Large Hadron Collider at CERN. The photon detector is based $9 on a cross-focussed image intensifier tube geometry where the image is de-magnified by a factor of 4. The anode consists of a silicon pixel array, bump-bonded to a fast, binary readout chip with matching pixel electronics. The $9 performance of a half-scale prototype is presented, together with the developments and tests of a full-scale tube with large active area. Specific requirements for pixel front-end and readout electronics in LHCb are outlined, and $9 recent results obtained from pixel chips applicable to hybrid photon detector design are summarized.

  12. Topology-optimized silicon photonic wire mode (de)multiplexer

    DEFF Research Database (Denmark)

    Frellsen, Louise Floor; Frandsen, Lars Hagedorn; Ding, Yunhong

    2015-01-01

    We have designed and for the first time experimentally verified a topology optimized mode (de)multiplexer, which demultiplexes the fundamental and the first order mode of a double mode photonic wire to two separate single mode waveguides (and multiplexes vice versa). The device has a footprint...

  13. Radiation hardness of silicon integrated nano photonic devices

    NARCIS (Netherlands)

    Ebeling, R.; Yang, S.; Bodis, P.; Harmsma, P.J.; Berg, J.H. van den; Boom, C.W. de; Yousefi, M.

    2010-01-01

    Integrated Nano Photonic (INP) sensors will be used in medical and space applications in the near future. Therefore, these devices must also be able to withstand harsh environments without failure. For space and medical applications radiation hardness is a very important issue. At TNO we have

  14. Photonic Structures for Light Trapping in Thin Film Silicon Solar Cells: Design and Experiment

    Directory of Open Access Journals (Sweden)

    Yi Ding

    2017-12-01

    Full Text Available One of the foremost challenges in designing thin-film silicon solar cells (TFSC is devising efficient light-trapping schemes due to the short optical path length imposed by the thin absorber thickness. The strategy relies on a combination of a high-performance back reflector and an optimized texture surface, which are commonly used to reflect and scatter light effectively within the absorption layer, respectively. In this paper, highly promising light-trapping structures based on a photonic crystal (PC for TFSCs were investigated via simulation and experiment. Firstly, a highly-reflective one-dimensional photonic crystal (1D-PC was designed and fabricated. Then, two types of 1D-PC-based back reflectors (BRs were proposed: Flat 1D-PC with random-textured aluminum-doped zinc oxide (AZO or random-textured 1D-PC with AZO. These two newly-designed BRs demonstrated not only high reflectivity and sufficient conductivity, but also a strong light scattering property, which made them efficient candidates as the electrical contact and back reflector since the intrinsic losses due to the surface plasmon modes of the rough metal BRs can be avoided. Secondly, conical two-dimensional photonic crystal (2D-PC-based BRs were investigated and optimized for amorphous a-SiGe:H solar cells. The maximal absorption value can be obtained with an aspect ratio of 1/2 and a period of 0.75 µm. To improve the full-spectral optical properties of solar cells, a periodically-modulated PC back reflector was proposed and experimentally demonstrated in the a-SiGe:H solar cell. This periodically-modulated PC back reflector, also called the quasi-crystal structure (QCS, consists of a large periodic conical PC and a randomly-textured Ag layer with a feature size of 500–1000 nm. The large periodic conical PC enables conformal growth of the layer, while the small feature size of Ag can further enhance the light scattering. In summary, a comprehensive study of the design, simulation

  15. Ultrahigh-speed hybrid laser for silicon photonic integrated chips

    DEFF Research Database (Denmark)

    Chung, Il-Sug; Park, Gyeong Cheol; Ran, Qijiang

    2013-01-01

    and light-emitting diode (LED) structures have been proposed so far. Our hybrid laser is one of these efforts [2]. The hybrid laser consists of a dielectric reflector, a III-V semiconductor active material, and a high-index-contrast grating (HCG) reflector formed in the silicon layer of a silicon......-oninsulator (SOI) wafer. ‘Hybrid’ indicates that a III-V active material is wafer-bonded to a silicon SOI wafer. In the hybrid laser, light is vertically amplified between the dielectric and the HCG reflectors, while the light output is laterally emitted to a normal Si ridge waveguide that is connected to the HCG...... reflector. The HCG works as a vertical mirror as well as a vertical-to-lateral coupler. Very small field penetration into the HCG allows for 3-4 times smaller modal volume than typical vertical-cavity surface-emitting lasers (VCSELs). This leads to high direct modulation speed. Details on device operating...

  16. Lifetime and diffusion length measurements on silicon material and solar cells. [Intentionally doped with impurities

    Energy Technology Data Exchange (ETDEWEB)

    Othmer, S.; Chen, S.C.

    1977-01-01

    Experimental methods were evaluated for the determination of lifetime and diffusion length in silicon intentionally doped with potentially lifetime-degrading impurities found in metallurgical grade silicon, impurities which may be residual in low-cost silicon intended for use in terrestrial flat-plat arrays. Results obtained by these methods were compared for mutual consistency. Lifetime measurements were made using a steady-state photoconductivity method, which was compared with a photoconductivity decay technique. Diffusion length determinations were made using short-circuit current measurements under penetrating illumination. This method was compared with a direct measurement of diffusion length using a scanning electron microscope. Mutual consistency among all experimental methods was verified, but steady-state photoconductivity was found preferable to photoconductivity decay at short lifetimes and in the presence of traps. The effects of a number of impurities on lifetime in bulk material, and on diffusion length in cells fabricated from this material, were determined. Results were compared with those obtained by others on the same material and devices using different techniques. General agreement was found in terms of the hierarchy of impurities which degrade the lifetime.

  17. Memory effect in silicon time-gated single-photon avalanche diodes

    Energy Technology Data Exchange (ETDEWEB)

    Dalla Mora, A.; Contini, D., E-mail: davide.contini@polimi.it; Di Sieno, L. [Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy); Tosi, A.; Boso, G.; Villa, F. [Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy); Pifferi, A. [Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy); CNR, Istituto di Fotonica e Nanotecnologie, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy)

    2015-03-21

    We present a comprehensive characterization of the memory effect arising in thin-junction silicon Single-Photon Avalanche Diodes (SPADs) when exposed to strong illumination. This partially unknown afterpulsing-like noise represents the main limiting factor when time-gated acquisitions are exploited to increase the measurement dynamic range of very fast (picosecond scale) and faint (single-photon) optical signals following a strong stray one. We report the dependences of this unwelcome signal-related noise on photon wavelength, detector temperature, and biasing conditions. Our results suggest that this so-called “memory effect” is generated in the deep regions of the detector, well below the depleted region, and its contribution on detector response is visible only when time-gated SPADs are exploited to reject a strong burst of photons.

  18. Chalcogenide Glass Lasers on Silicon Substrate Integrated Photonics

    Science.gov (United States)

    2016-07-08

    toroidal moments, anapoles and flying doughnuts 17:30 - 18:00 K. Neyts: Liquid crystals, electrophoresis, electroluminescence 18:00 End of Day 2...in driving economic growth and employment throughout the world, while solving important societal challenges in information and consumer technologies...at Qatar Dean Message Photonics is the science of harnessing light. It plays a major role in driving economic growth and employment throughout the

  19. Integration of 2D materials on a silicon photonics platform for optoelectronics applications

    Directory of Open Access Journals (Sweden)

    Youngblood Nathan

    2016-12-01

    Full Text Available Owing to enormous growth in both data storage and the demand for high-performance computing, there has been a major effort to integrate telecom networks on-chip. Silicon photonics is an ideal candidate, thanks to the maturity and economics of current CMOS processes in addition to the desirable optical properties of silicon in the near IR. The basics of optical communication require the ability to generate, modulate, and detect light, which is not currently possible with silicon alone. Growing germanium or III/V materials on silicon is technically challenging due to the mismatch between lattice constants and thermal properties. One proposed solution is to use two-dimensional materials, which have covalent bonds in-plane, but are held together by van der Waals forces out of plane. These materials have many unique electrical and optical properties and can be transferred to an arbitrary substrate without lattice matching requirements. This article reviews recent progress toward the integration of 2D materials on a silicon photonics platform for optoelectronic applications.

  20. Radiation-hard silicon photonics for high energy physics and beyond

    CERN Multimedia

    CERN. Geneva

    2016-01-01

    Silicon photonics (SiPh) is currently being investigated as a promising technology for future radiation hard optical links. The possibility of integrating SiPh devices with electronics and/or silicon particle sensors as well as an expected very high resistance against radiation damage make this technology particularly interesting for potential use close to the interaction points in future in high energy physics experiments and other radiation-sensitive applications. The presentation will summarize the outcomes of the research on radiation hard SiPh conducted within the ICE-DIP projected.

  1. Enhancement of photoluminescence and raman scattering in one-dimensional photonic crystals based on porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Gonchar, K. A., E-mail: k.a.gonchar@gmail.com [Moscow State University, Physics Faculty (Russian Federation); Musabek, G. K.; Taurbayev, T. I. [Al Farabi Kazakh National University, Physics Department (Kazakhstan); Timoshenko, V. Yu. [Moscow State University, Physics Faculty (Russian Federation)

    2011-05-15

    In porous-silicon-based multilayered structures that exhibit the properties of one-dimensional photonic crystals, an increase in the photoluminescence and Raman scattering intensities is observed upon optical excitation at the wavelength 1.064 {mu}m. When the excitation wavelength falls within the edge of the photonic band gap of the structures, a multiple increase (by a factor larger than 400) in the efficiency of Raman scattering is detected. The effect is attributed to partial localization of excitation light and, correspondingly, to the much longer time of interaction of light with the material in the structures.

  2. Challenges in the implementation of dense wavelength division multiplexed (DWDM) optical interconnects using resonant silicon photonics

    Science.gov (United States)

    Lentine, Anthony L.; DeRose, Christopher T.

    2016-02-01

    Small silicon photonics micro-resonator modulators and filters hold the promise for multi-terabit per-second interconnects at energy consumptions well below 1 pJ/bit. To date, no products exist and little known commercial development is occurring using this technology. Why? In this talk, we review the many challenges that remain to be overcome in bringing this technology from the research labs to the field where they can overcome important commercial, industrial, and national security limitations of existing photonic technologies.

  3. Space-qualified silicon avalanche-photodiode single-photon-counting modules

    Science.gov (United States)

    Sun, Xiaoli; Krainak, Michael A.; Abshire, James B.; Spinhirne, James D.; Trottier, Claude; Davies, Murray; Dautet, Henri; Allan, Graham R.; Lukemire, Alan T.; Vandiver, James C.

    2004-09-01

    A space-qualified silicon avalanche-photodiode (APD) based single-photon-counting-module (SPCM) was developed for the Geoscience Laser Altimeter System (GLAS) on board NASA's Ice, Cloud, and Land Elevation Satellite (ICESat). Numerous improvements were made over the commercially available SPCMs in both performance and reliability. The measured optoelectronic parameters include, 65% photon detection efficiency at the 532 nm wavelength, 15-17 mega-counts per second (Mcps) maximum count rate and less than 200 s-1 dark counts before exposure to space radiation.

  4. III-V on silicon micro-photonic circuits for frequency downconversion of RF signals

    Science.gov (United States)

    Roelkens, G.; Keyvaninia, S.; Tassaert, M.; Latkowski, S.; Bente, E.; Mariën, J.; Thomassen, L.; Baets, R.

    2017-11-01

    RF frequency downconverters are of key importance in communication satellites. Classically, this is implemented using an electronic mixer. In this paper we explore the use of photonic technology to realize the same functionality. The potential advantages of such an approach compared to the classical microwave solutions are that it is lighter weight, has lower power consumption and can be made smaller if photonic technology is used. An additional advantage is the fact that the optical local oscillator (LO) reference can easily be transported over longer distances than the equivalent LO signal in the microwave domain due to the large bandwidth and low loss and dispersion of optical fiber. Another big advantage is that one can envision the use of short pulse trains as the LO - starting off from a sinusoidal RF reference - in order to exploit subsampling. Subsampling avoids the need for high frequency LO references, which is especially valuable if a downconversion over several 10s of GHz is required. In this paper we present the operation principle of such a photonic frequency downconverter and describe the performance of the developed micro-photonic building blocks required for this functionality. These micro-photonic building blocks are implemented on a III-V semiconductor-on-silicon photonic platform. The components include a micro-photonic hybridly modelocked laser, a 30GHz electroabsorption modulator and an intermediate frequency (1.5GHz) photodetector.

  5. Silicon photonic crystal filter with ultrawide passband characteristics.

    Science.gov (United States)

    Baldycheva, Anna; Tolmachev, Vladimir A; Perova, Tatiana S; Zharova, Yulia A; Astrova, Ekaterina V; Berwick, Kevin

    2011-05-15

    We report on what is believed to be the first example of an ultrawide, bandpass filter, based on a high-contrast multicomponent one-dimensional Si photonic crystal (PC). The effect of the disappearance of a limited number of flat stopbands and their replacement with extended passbands is demonstrated over a wide IR range. The passbands obtained exhibit a high transmission of 92% to 96% and a substantial bandwidth of 1800 nm, which is spectrally flat within the passband. The multicomponent PC model suggested can be applied to the design of any micro- or nanostructured semiconductor or dielectric material for application across a wide spectral range. © 2011 Optical Society of America

  6. Improvement of carrier diffusion length in silicon nanowire arrays using atomic layer deposition

    Science.gov (United States)

    Kato, Shinya; Kurokawa, Yasuyoshi; Miyajima, Shinsuke; Watanabe, Yuya; Yamada, Akira; Ohta, Yoshimi; Niwa, Yusuke; Hirota, Masaki

    2013-08-01

    To achieve a high-efficiency silicon nanowire (SiNW) solar cell, surface passivation technique is very important because a SiNW array has a large surface area. We successfully prepared by atomic layer deposition (ALD) high-quality aluminum oxide (Al2O3) film for passivation on the whole surface of the SiNW arrays. The minority carrier lifetime of the Al2O3-depositedSiNW arrays with bulk silicon substrate was improved to 27 μs at the optimum annealing condition. To remove the effect of bulk silicon, the effective diffusion length of minority carriers in the SiNW array was estimated by simple equations and a device simulator. As a result, it was revealed that the effective diffusion length in the SiNW arrays increased from 3.25 to 13.5 μm by depositing Al2O3 and post-annealing at 400°C. This improvement of the diffusion length is very important for application to solar cells, and Al2O3 deposited by ALD is a promising passivation material for a structure with high aspect ratio such as SiNW arrays.

  7. Three-Dimensional Integration of Black Phosphorus Photodetector with Silicon Photonics and Nanoplasmonics.

    Science.gov (United States)

    Chen, Che; Youngblood, Nathan; Peng, Ruoming; Yoo, Daehan; Mohr, Daniel A; Johnson, Timothy W; Oh, Sang-Hyun; Li, Mo

    2017-02-08

    We demonstrate the integration of a black phosphorus photodetector in a hybrid, three-dimensional architecture of silicon photonics and metallic nanoplasmonics structures. This integration approach combines the advantages of the low propagation loss of silicon waveguides, high-field confinement of a plasmonic nanogap, and the narrow bandgap of black phosphorus to achieve high responsivity for detection of telecom-band, near-infrared light. Benefiting from an ultrashort channel (∼60 nm) and near-field enhancement enabled by the nanogap structure, the photodetector shows an intrinsic responsivity as high as 10 A/W afforded by internal gain mechanisms, and a 3 dB roll-off frequency of 150 MHz. This device demonstrates a promising approach for on-chip integration of three distinctive photonic systems, which, as a generic platform, may lead to future nanophotonic applications for biosensing, nonlinear optics, and optical signal processing.

  8. Optical absorption coefficient and minority carrier diffusion length measurements in low-cost silicon solar cell material

    Energy Technology Data Exchange (ETDEWEB)

    Swimm, R.T.; Dumas, K.A.

    1982-11-01

    The optical absorption coefficient of silicon solar cell material grown by three low-cost growth methods was measured in the wavelength interval 0.8< or =lambda< or =1.0 ..mu..m, the wavelength region of interest in surface photovoltage measurements of the minority carrier diffusion length. The square root of the absorption coefficient was found to vary linearly with photon energy over the wavelengths studied, and the measured data agree with a linear empirical fit to within 0.5% RMS. The absorption coefficients obtained are slightly lower than those reported by Runyan, with the greatest disagreement at long wavelengths. Minority carrier diffusion lengths computed using the present absorption coefficients are approximately 16% greater than those calculated using Runyan's data. Excellent sample-to-sample agreement within and between lots indicates that for two of the growth methods studied, material quality as judged by optical properties has not been sacrificed by the use of low-cost growth methods. Samples grown by the third growth method studied showed measurably poorer optical quality.

  9. Topology optimized mode multiplexing in silicon-on-insulator photonic wire waveguides

    DEFF Research Database (Denmark)

    Frellsen, Louise Floor; Ding, Yunhong; Sigmund, Ole

    2016-01-01

    We design and experimentally verify a topology optimized low-loss and broadband two-mode (de-)multiplexer, which is (de-)multiplexing the fundamental and the first-order transverse-electric modes in a silicon photonic wire. The device has a footprint of 2.6 μm x 4.22 μm and exhibits a loss 14 d...

  10. Six-beam homodyne laser Doppler vibrometry based on silicon photonics technology.

    Science.gov (United States)

    Li, Yanlu; Zhu, Jinghao; Duperron, Matthieu; O'Brien, Peter; Schüler, Ralf; Aasmul, Soren; de Melis, Mirko; Kersemans, Mathias; Baets, Roel

    2018-02-05

    This paper describes an integrated six-beam homodyne laser Doppler vibrometry (LDV) system based on a silicon-on-insulator (SOI) full platform technology, with on-chip photo-diodes and phase modulators. Electronics and optics are also implemented around the integrated photonic circuit (PIC) to enable a simultaneous six-beam measurement. Measurement of a propagating guided elastic wave in an aluminum plate (speed ≈ 909 m/s @ 61.5 kHz) is demonstrated.

  11. A comb laser-driven DWDM silicon photonic transmitter based on microring modulators.

    Science.gov (United States)

    Chen, Chin-Hui; Ashkan Seyedi, M; Fiorentino, Marco; Livshits, Daniil; Gubenko, Alexey; Mikhrin, Sergey; Mikhrin, Vladimir; Beausoleil, Raymond G

    2015-08-10

    We demonstrate concurrent multi-channel transmission at 10 Gbps per channel of a DWDM silicon photonic transmitter. The DWDM transmitter is based on a single quantum dot comb laser and an array of microring resonator-based modulators. The resonant wavelengths of microrings are thermally tuned to align with the wavelengths provided by the comb laser. No obvious crosstalk is observed at 240 GHz channel spacing.

  12. Silicon nanocrystal-based photonic crystal slabs with broadband and efficient directional light emission

    Czech Academy of Sciences Publication Activity Database

    Ondič, Lukáš; Varga, Marián; Pelant, Ivan; Valenta, J.; Kromka, Alexander; Elliman, R. G.

    2017-01-01

    Roč. 7, č. 1 (2017), s. 1-8, č. článku 5763. ISSN 2045-2322 R&D Projects: GA ČR GJ16-09692Y; GA MŠk(CZ) LD15003 Institutional support: RVO:68378271 Keywords : photonic crystal slab * silicon nanocrystals * light emission Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.259, year: 2016

  13. Results on photon and neutron irradiation of semitransparent amorphous-silicon sensors

    CERN Document Server

    Carabe, J; Ferrando, A; Fuentes, J; Gandia, J J; Josa-Mutuberria, I; Molinero, A; Oller, J C; Arce, P; Calvo, E; Figueroa, C F; García, N; Matorras, F; Rodrigo, T; Vila, I; Virto, A L; Fenyvesi, A; Molnár, J; Sohler, D

    2000-01-01

    Semitransparent amorphous-silicon sensors are basic elements for laser 2D position reconstruction in the CMS multipoint alignment link system. Some of the sensors have to work in a very hard radiation environment. Two different sensor types have been irradiated with /sup 60/Co photons (up to 100 kGy) and fast neutrons (up to 10/sup 15 / cm/sup -2/), and the subsequent change in their performance has been measured. (13 refs).

  14. Silicon Photonics Transmitter with SOA and Semiconductor Mode-Locked Laser.

    Science.gov (United States)

    Moscoso-Mártir, Alvaro; Müller, Juliana; Hauck, Johannes; Chimot, Nicolas; Setter, Rony; Badihi, Avner; Rasmussen, Daniel E; Garreau, Alexandre; Nielsen, Mads; Islamova, Elmira; Romero-García, Sebastián; Shen, Bin; Sandomirsky, Anna; Rockman, Sylvie; Li, Chao; Sharif Azadeh, Saeed; Lo, Guo-Qiang; Mentovich, Elad; Merget, Florian; Lelarge, François; Witzens, Jeremy

    2017-10-24

    We experimentally investigate an optical link relying on silicon photonics transmitter and receiver components as well as a single section semiconductor mode-locked laser as a light source and a semiconductor optical amplifier for signal amplification. A transmitter based on a silicon photonics resonant ring modulator, an external single section mode-locked laser and an external semiconductor optical amplifier operated together with a standard receiver reliably supports 14 Gbps on-off keying signaling with a signal quality factor better than 7 for 8 consecutive comb lines, as well as 25 Gbps signaling with a signal quality factor better than 7 for one isolated comb line, both without forward error correction. Resonant ring modulators and Germanium waveguide photodetectors are further hybridly integrated with chip scale driver and receiver electronics, and their co-operability tested. These experiments will serve as the basis for assessing the feasibility of a silicon photonics wavelength division multiplexed link relying on a single section mode-locked laser as a multi-carrier light source.

  15. Strontium titanate/silicon-based terahertz photonic crystal multilayer stack

    International Nuclear Information System (INIS)

    Xin, J.Z.; Jim, K.L.; Tsang, Y.H.; Chan, H.L.W.; Leung, C.W.; Yang, J.; Gong, X.J.; Chen, L.Q.; Gao, F.

    2012-01-01

    A one-dimensional photonic crystal working in the terahertz (THz) range was designed and implemented. To facilitate the design, the transmission properties of strontium titanate crystals were characterized by THz-time-domain spectroscopy. Relatively high refractive index (∝18.5) and transmission ratio (0.08) were observed between 0.2 to 1 THz. A stacked structure of (Si d Si /STO d STO ) N /Si d Si was then designed, with transmission spectra calculated by the transfer matrix method. The effects of the filling ratio (d STO /(d Si +d STO )), periodicity (d Si +d STO ) and the number of repeats N on the transmission of PC were investigated. The effect of introducing a defect layer was also studied. Based on these, Si/STO multilayers with STO defect thickness of 125 μm and 200 μm were measured. The shift of the defect mode was observed and compared with the calculations. (orig.)

  16. High-Q photonic resonators and electro-optic coupling using silicon-on-lithium-niobate

    Science.gov (United States)

    Witmer, Jeremy D.; Valery, Joseph A.; Arrangoiz-Arriola, Patricio; Sarabalis, Christopher J.; Hill, Jeff T.; Safavi-Naeini, Amir H.

    2017-04-01

    Future quantum networks, in which superconducting quantum processors are connected via optical links, will require microwave-to-optical photon converters that preserve entanglement. A doubly-resonant electro-optic modulator (EOM) is a promising platform to realize this conversion. Here, we present our progress towards building such a modulator by demonstrating the optically-resonant half of the device. We demonstrate high quality (Q) factor ring, disk and photonic crystal resonators using a hybrid silicon-on-lithium-niobate material system. Optical Q factors up to 730,000 are achieved, corresponding to propagation loss of 0.8 dB/cm. We also use the electro-optic effect to modulate the resonance frequency of a photonic crystal cavity, achieving a electro-optic modulation coefficient between 1 and 2 pm/V. In addition to quantum technology, we expect that our results will be useful both in traditional silicon photonics applications and in high-sensitivity acousto-optic devices.

  17. Visual Sensor for Sterilization of Polymer Fixtures Using Embedded Mesoporous Silicon Photonic Crystals.

    Science.gov (United States)

    Kumeria, Tushar; Wang, Joanna; Chan, Nicole; Harris, Todd J; Sailor, Michael J

    2018-01-26

    A porous photonic crystal is integrated with a plastic medical fixture (IV connector hub) to provide a visual colorimetric sensor to indicate the presence or absence of alcohol used to sterilize the fixture. The photonic crystal is prepared in porous silicon (pSi) by electrochemical anodization of single crystal silicon, and the porosity and the stop band of the material is engineered such that the integrated device visibly changes color (green to red or blue to green) when infiltrated with alcohol. Two types of self-reporting devices are prepared and their performance compared: the first type involves heat-assisted fusion of a freestanding pSi photonic crystal to the connector end of a preformed polycarbonate hub, forming a composite where the unfilled portion of the pSi film acts as the sensor; the second involves generation of an all-polymer replica of the pSi photonic crystal by complete thermal infiltration of the pSi film and subsequent chemical dissolution of the pSi portion. Both types of sensors visibly change color when wetted with alcohol, and the color reverts to the original upon evaporation of the liquid. The sensor performance is verified using E. coli-infected samples.

  18. Hybrid graphene/silicon integrated optical isolators with photonic spin–orbit interaction

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Jingwen; Sun, Xiankai, E-mail: xksun@cuhk.edu.hk [Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, New Territories (Hong Kong); Shun Hing Institute of Advanced Engineering, The Chinese University of Hong Kong, Shatin, New Territories (Hong Kong); Xi, Xiang; Yu, Zejie [Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, New Territories (Hong Kong)

    2016-04-11

    Optical isolators are an important building block in photonic computation and communication. In traditional optics, isolators are realized with magneto-optical garnets. However, it remains challenging to incorporate such materials on an integrated platform because of the difficulty in material growth and bulky device footprint. Here, we propose an ultracompact integrated isolator by exploiting graphene's magneto-optical property on a silicon-on-insulator platform. The photonic nonreciprocity is achieved because the cyclotrons in graphene experiencing different optical spins exhibit different responses to counterpropagating light. Taking advantage of cavity resonance effects, we have numerically optimized a device design, which shows excellent isolation performance with the extinction ratio over 45 dB and the insertion loss around 12 dB at a wavelength near 1.55 μm. Featuring graphene's CMOS compatibility and substantially reduced device footprint, our proposal sheds light on monolithic integration of nonreciprocal photonic devices.

  19. Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials

    Science.gov (United States)

    Nikzad, Shouleh; Hoenk, Michael; Jewell, April D.; Hennessy, John J.; Carver, Alexander G.; Jones, Todd J.; Goodsall, Timothy M.; Hamden, Erika T.; Suvarna, Puneet; Bulmer, J.; Shahedipour-Sandvik, F.; Charbon, Edoardo; Padmanabhan, Preethi; Hancock, Bruce; Bell, L. Douglas

    2016-01-01

    Ultraviolet (UV) studies in astronomy, cosmology, planetary studies, biological and medical applications often require precision detection of faint objects and in many cases require photon-counting detection. We present an overview of two approaches for achieving photon counting in the UV. The first approach involves UV enhancement of photon-counting silicon detectors, including electron multiplying charge-coupled devices and avalanche photodiodes. The approach used here employs molecular beam epitaxy for delta doping and superlattice doping for surface passivation and high UV quantum efficiency. Additional UV enhancements include antireflection (AR) and solar-blind UV bandpass coatings prepared by atomic layer deposition. Quantum efficiency (QE) measurements show QE > 50% in the 100–300 nm range for detectors with simple AR coatings, and QE ≅ 80% at ~206 nm has been shown when more complex AR coatings are used. The second approach is based on avalanche photodiodes in III-nitride materials with high QE and intrinsic solar blindness. PMID:27338399

  20. Photon path length distributions for cloudy skies – oxygen A-Band measurements and model calculations

    Directory of Open Access Journals (Sweden)

    O. Funk

    Full Text Available This paper addresses the statistics underlying cloudy sky radiative transfer (RT by inspection of the distribution of the path lengths of solar photons. Recent studies indicate that this approach is promising, since it might reveal characteristics about the diffusion process underlying atmospheric radiative transfer (Pfeilsticker, 1999. Moreover, it uses an observable that is directly related to the atmospheric absorption and, therefore, of climatic relevance. However, these studies are based largely on the accuracy of the measurement of the photon path length distribution (PPD. This paper presents a refined analysis method based on high resolution spectroscopy of the oxygen A-band. The method is validated by Monte Carlo simulation atmospheric spectra. Additionally, a new method to measure the effective optical thickness of cloud layers, based on fitting the measured differential transmissions with a 1-dimensional (discrete ordinate RT model, is presented. These methods are applied to measurements conducted during the cloud radar inter-comparison campaign CLARE’98, which supplied detailed cloud structure information, required for the further analysis. For some exemplary cases, measured path length distributions and optical thicknesses are presented and backed by detailed RT model calculations. For all cases, reasonable PPDs can be retrieved and the effects of the vertical cloud structure are found. The inferred cloud optical thicknesses are in agreement with liquid water path measurements.

    Key words. Meteorology and atmospheric dynamics (radiative processes; instruments and techniques

  1. Photon path length distributions for cloudy skies – oxygen A-Band measurements and model calculations

    Directory of Open Access Journals (Sweden)

    O. Funk

    2003-03-01

    Full Text Available This paper addresses the statistics underlying cloudy sky radiative transfer (RT by inspection of the distribution of the path lengths of solar photons. Recent studies indicate that this approach is promising, since it might reveal characteristics about the diffusion process underlying atmospheric radiative transfer (Pfeilsticker, 1999. Moreover, it uses an observable that is directly related to the atmospheric absorption and, therefore, of climatic relevance. However, these studies are based largely on the accuracy of the measurement of the photon path length distribution (PPD. This paper presents a refined analysis method based on high resolution spectroscopy of the oxygen A-band. The method is validated by Monte Carlo simulation atmospheric spectra. Additionally, a new method to measure the effective optical thickness of cloud layers, based on fitting the measured differential transmissions with a 1-dimensional (discrete ordinate RT model, is presented. These methods are applied to measurements conducted during the cloud radar inter-comparison campaign CLARE’98, which supplied detailed cloud structure information, required for the further analysis. For some exemplary cases, measured path length distributions and optical thicknesses are presented and backed by detailed RT model calculations. For all cases, reasonable PPDs can be retrieved and the effects of the vertical cloud structure are found. The inferred cloud optical thicknesses are in agreement with liquid water path measurements. Key words. Meteorology and atmospheric dynamics (radiative processes; instruments and techniques

  2. Strontium titanate/silicon-based terahertz photonic crystal multilayer stack

    Energy Technology Data Exchange (ETDEWEB)

    Xin, J.Z.; Jim, K.L.; Tsang, Y.H.; Chan, H.L.W.; Leung, C.W. [Hong Kong Polytechnic University, Department of Applied Physics and Materials Research Centre, Kowloon, Hong Kong (China); Yang, J.; Gong, X.J.; Chen, L.Q.; Gao, F. [Chinese Academy of Sciences, Institute of Biomedical and Health Engineering, Shenzhen Institutes of Advanced Technology, Shenzhen (China)

    2012-04-15

    A one-dimensional photonic crystal working in the terahertz (THz) range was designed and implemented. To facilitate the design, the transmission properties of strontium titanate crystals were characterized by THz-time-domain spectroscopy. Relatively high refractive index ({proportional_to}18.5) and transmission ratio (0.08) were observed between 0.2 to 1 THz. A stacked structure of (Si d{sub Si}/STO d{sub STO}){sub N} /Si d{sub Si} was then designed, with transmission spectra calculated by the transfer matrix method. The effects of the filling ratio (d{sub STO}/(d{sub Si}+d{sub STO})), periodicity (d{sub Si}+d{sub STO}) and the number of repeats N on the transmission of PC were investigated. The effect of introducing a defect layer was also studied. Based on these, Si/STO multilayers with STO defect thickness of 125 {mu}m and 200 {mu}m were measured. The shift of the defect mode was observed and compared with the calculations. (orig.)

  3. High-Sensitivity Temperature-Independent Silicon Photonic Microfluidic Biosensors

    Science.gov (United States)

    Kim, Kangbaek

    Optical biosensors that can precisely quantify the presence of specific molecular species in real time without the need for labeling have seen increased use in the drug discovery industry and molecular biology in general. Of the many possible optical biosensors, the TM mode Si biosensor is shown to be very attractive in the sensing application because of large field amplitude on the surface and cost effective CMOS VLSI fabrication. Noise is the most fundamental factor that limits the performance of sensors in development of high-sensitivity biosensors, and noise reduction techniques require precise studies and analysis. One such example stems from thermal fluctuations. Generally SOI biosensors are vulnerable to ambient temperature fluctuations because of large thermo-optic coefficient of silicon (˜2x10 -4 RIU/K), typically requiring another reference ring and readout sequence to compensate temperature induced noise. To address this problem, we designed sensors with a novel TM-mode shallow-ridge waveguide that provides both large surface amplitude for bulk and surface sensing. With proper design, this also provides large optical confinement in the aqueous cladding that renders the device athermal using the negative thermo-optic coefficient of water (~ --1x10-4RIU/K), demonstrating cancellation of thermo-optic effects for aqueous solution operation near 300K. Additional limitations resulting from mechanical actuator fluctuations, stability of tunable lasers, and large 1/f noise of lasers and sensor electronics can limit biosensor performance. Here we also present a simple harmonic feedback readout technique that obviates the need for spectrometers and tunable lasers. This feedback technique reduces the impact of 1/f noise to enable high-sensitivity, and a DSP lock-in with 256 kHz sampling rate can provide down to micros time scale monitoring for fast transitions in biomolecular concentration with potential for small volume and low cost. In this dissertation, a novel

  4. Third-harmonic generation in silicon and photonic crystals of macroporous silicon in the spectral intermediate-IR range; Erzeugung der Dritten Harmonischen in Silizium und Photonischen Kristallen aus makroporoesem Silizium im spektralen mittleren IR-Bereich

    Energy Technology Data Exchange (ETDEWEB)

    Mitzschke, Kerstin

    2007-11-01

    Nonlinear optical spectroscopy is a powerful method to study surface or bulk properties of condensed matter. In centrosymmetric materials like silicon even order nonlinear optical processes are forbidden. Besides self-focussing or self phase modulation third-harmonic-generation (THG) is the simplest process that can be studied. This work demonstrates that THG is a adapted non-contact and non-invasive optical method to get information about bulk structures of silicon and Photonic crystals (PC), consisting of silicon. Until now most studies are done in the visible spectral range being limited by the linear absorption losses. So the extension of THG to the IR spectral range is extremely useful. This will allow the investigation of Photonic Crystals, where frequencies near a photonic bandgap are of special interest. 2D- photonic structures under investigation were fabricated via photoelectrochemical etching of the Si (100) wafer (thickness 500 {mu}m) receiving square and hexagonal arranged pores. The typical periodicity of the structures used is 2 {mu}m and the length of the pores reached to 400 {mu}m. Because of stability the photonic structures were superimposed on silicon substrate. The experimental set-up used for the THG experiments generates tuneable picosecond IR pulses (tuning range 1500-4000 cm{sup -1}). The IR-pulse hit the sample either perpendicular to the sample surface or under an angle {theta}. The sample can be rotated (f) around the surface normal. The generated third harmonic is analysed by a polarizer, spectrally filtered by a polychromator and registered by a CCD camera. The setup can be used either in transmission or in reflection mode. Optical transmission and reflection spectra of the Si bulk correspond well with the theoretical description, a 4-fold and a 8-fold dependencies of the azimuth angle resulting in the structure of the x{sup (3)}-tensor of (100)-Si. The situation changes dramatically if the PC with hexagonal structure is investigated

  5. Nanostructured porous silicon: The winding road from photonics to cell scaffolds. A review.

    Directory of Open Access Journals (Sweden)

    Jacobo eHernandez-Montelongo

    2015-05-01

    Full Text Available For over 20 years nanostructured porous silicon (nanoPS has found a vast number of applications in the broad fields of photonics and optoelectronics, triggered by the discovery of its photoluminescent behavior in 1990. Besides, its biocompatibility, biodegradability, and bioresorbability make porous silicon (PSi an appealing biomaterial. These properties are largely a consequence of its particular susceptibility to oxidation, leading to the formation of silicon oxide which is readily dissolved by body fluids. This paper reviews the evolution of the applications of PSi and nanoPS from photonics through biophotonics, to their use as cell scaffolds, whether as an implantable substitute biomaterial, mainly for bony and ophthalmological tissues, or as an in-vitro cell conditioning support, especially for pluripotent cells. For any of these applications, PSi/nanoPS can be used directly after synthesis from Si wafers, upon appropriate surface modification processes, or as a composite biomaterial. Unedited studies of fluorescently active PSi structures for cell culture are brought to evidence the margin for new developments.

  6. Label-free optical detection of bacteria on a 1-D photonic crystal of porous silicon

    Science.gov (United States)

    Wu, Chia-Chen; Alvarez, Sara D.; Rang, Camilla U.; Chao, Lin; Sailor, Michael J.

    2009-02-01

    The construction of a specific, label-free, bacteria biosensor using porous silicon 1-D photonic crystals will be described. Bacteria resident on the surface of porous silicon act as scattering centers for light resonant with the photonic crystal; the diffusely scattered light possesses the optical spectrum of the underlying photonic crystal. Using a spectrometer fitted to a light microscope, the bacteria are imaged without using exogenous dyes or labels and are quantified by measuring the intensity of scattered light. In order to selectively bind and identify bacteria using porous Si, we use surface modifications to reduce nonspecific binding to the surface and to engineer bacteria specificity onto the surface. Bovine serum albumin (BSA) was adsorbed to the porous Si surface to reduce nonspecific binding of bacteria. The coatings were then chemically activated to immobilize polyclonal antibodies specific to Escherichia coli. Two E. coli strains were used in our study, E. coli DH5α and non-pathogenic enterohemorrhagic Escherichia coli (EHEC) strain. The nonpathogenic Vibrio cholerae O1 strain was used to test for antibody specificity. Successful attachment of antibodies was measured using fluorescence microscopy and the scattering method was used to test for bacteria binding specificity.

  7. Extraordinary Light-Trapping Enhancement in Silicon Solar Cell Patterned with Graded Photonic Super-Crystals

    Directory of Open Access Journals (Sweden)

    Safaa Hassan

    2017-12-01

    Full Text Available Light-trapping enhancement in newly discovered graded photonic super-crystals (GPSCs with dual periodicity and dual basis is herein explored for the first time. Broadband, wide-incident-angle, and polarization-independent light-trapping enhancement was achieved in silicon solar cells patterned with these GPSCs. These super-crystals were designed by multi-beam interference, rendering them flexible and efficient. The optical response of the patterned silicon solar cell retained Bloch-mode resonance; however, light absorption was greatly enhanced in broadband wavelengths due to the graded, complex unit super-cell nanostructures, leading to the overlap of Bloch-mode resonances. The broadband, wide-angle light coupling and trapping enhancement mechanism are understood to be due to the spatial variance of the index of refraction, and this spatial variance is due to the varying filling fraction, the dual basis, and the varying lattice constants in different directions.

  8. Analysis of single-photon time resolution of FBK silicon photomultipliers

    International Nuclear Information System (INIS)

    Acerbi, Fabio; Ferri, Alessandro; Gola, Alberto; Zorzi, Nicola; Piemonte, Claudio

    2015-01-01

    We characterized and analyzed an important feature of silicon photomultipliers: the single-photon time resolution (SPTR). We characterized the SPTR of new RGB (Red–Green–Blue) type Silicon Photomultipliers and SPADs produced at FBK (Trento, Italy), studying its main limiting factors. We compared time resolution of 1×1 mm 2 and 3×3 mm 2 SiPMs and a single SiPM cell (i.e. a SPAD with integrated passive-quenching), employing a mode-locked pulsed laser with 2-ps wide pulses. We estimated the contribution of front-end electronic-noise, of cell-to-cell uniformity, and intrinsic cell time-resolution. At a single-cell level, we compared the results obtained with different layouts. With a circular cell with a top metallization covering part of the edge and enhancing the signal extraction, we reached ~20 ps FWHM of time resolution

  9. Analysis of single-photon time resolution of FBK silicon photomultipliers

    Energy Technology Data Exchange (ETDEWEB)

    Acerbi, Fabio, E-mail: acerbi@fbk.eu; Ferri, Alessandro; Gola, Alberto; Zorzi, Nicola; Piemonte, Claudio

    2015-07-01

    We characterized and analyzed an important feature of silicon photomultipliers: the single-photon time resolution (SPTR). We characterized the SPTR of new RGB (Red–Green–Blue) type Silicon Photomultipliers and SPADs produced at FBK (Trento, Italy), studying its main limiting factors. We compared time resolution of 1×1 mm{sup 2} and 3×3 mm{sup 2} SiPMs and a single SiPM cell (i.e. a SPAD with integrated passive-quenching), employing a mode-locked pulsed laser with 2-ps wide pulses. We estimated the contribution of front-end electronic-noise, of cell-to-cell uniformity, and intrinsic cell time-resolution. At a single-cell level, we compared the results obtained with different layouts. With a circular cell with a top metallization covering part of the edge and enhancing the signal extraction, we reached ~20 ps FWHM of time resolution.

  10. Optical properties of organic-silicon photonic crystal nanoslot cavity light source

    Directory of Open Access Journals (Sweden)

    Ming-Jay Yang

    2017-03-01

    Full Text Available We theoretically study a dielectric photonic crystal nanoslot cavity immersed in an organic fluid containing near-infrared dyes by means of a full rate equation model including the complete cavity QED effects. Based on the modeling results, we numerically design an organic-silicon cavity light source in which its mode volume, quality factor, and far-field emission pattern are optimized for energy-efficient, high-speed applications. Dye quantum efficiency improved by two orders of magnitude and 3dB modulation bandwidth of a few hundred GHz can be obtained.

  11. Enhanced radiative recombination rate for electron-hole droplets in a silicon photonic crystal nanocavity

    Science.gov (United States)

    Ihara, Toshiyuki; Takahashi, Yasushi; Noda, Susumu; Kanemitsu, Yoshihiko

    2017-07-01

    We investigate photoluminescence (PL) spectra and dynamics of clean silicon photonic crystal nanocavities at 10 K. A sharp emission peak due to the nanocavity mode has the largest intensity when the energy of the nanocavity mode is equal to the emission energy of the electron-hole droplets (EHDs). Time-resolved PL spectroscopy indicates that the PL lifetime of the EHD is reduced to as short as 1.2 ns by the nanocavity mode. A careful analysis of the lifetimes indicates that the radiative recombination rate for EHD is enhanced by a factor of larger than 5 by the Purcell effect.

  12. Integrated programmable photonic filter on the silicon-on-insulator platform.

    Science.gov (United States)

    Liao, Shasha; Ding, Yunhong; Peucheret, Christophe; Yang, Ting; Dong, Jianji; Zhang, Xinliang

    2014-12-29

    We propose and demonstrate a silicon-on-insulator (SOI) on-chip programmable filter based on a four-tap finite impulse response structure. The photonic filter is programmable thanks to amplitude and phase modulation of each tap controlled by thermal heaters. We further demonstrate the tunability of the filter central wavelength, bandwidth and variable passband shape. The tuning range of the central wavelength is at least 42% of the free spectral range. The bandwidth tuning range is at least half of the free spectral range. Our scheme has distinct advantages of compactness, capability for integrating with electronics.

  13. Single photon timing resolution and detection efficiency of the IRST silicon photo-multipliers

    International Nuclear Information System (INIS)

    Collazuol, G.; Ambrosi, G.; Boscardin, M.; Corsi, F.; Dalla Betta, G.F.; Del Guerra, A.; Dinu, N.; Galimberti, M.; Giulietti, D.; Gizzi, L.A.; Labate, L.; Llosa, G.; Marcatili, S.; Morsani, F.; Piemonte, C.; Pozza, A.; Zaccarelli, L.; Zorzi, N.

    2007-01-01

    Silicon photo-multipliers (SiPM) consist in matrices of tiny, passive quenched avalanche photo-diode cells connected in parallel via integrated resistors and operated in Geiger mode. Novel types of SiPM are being developed at FBK-IRST (Trento, Italy). Despite their classical shallow junction n-on-p structure the devices are unique in their enhanced photo-detection efficiency (PDE) for short-wavelengths and in their low level of dark rate and excess noise factor. After a summary of the extensive SiPM characterization we will focus on the study of PDE and the single photon timing resolution

  14. Effect of silicone gel breast prosthesis on electron and photon dose distributions

    Energy Technology Data Exchange (ETDEWEB)

    Krishnan, L.; St. George, F.J.; Mansfield, C.M.; Krishnan, E.C.

    1983-01-01

    The effect of a silicone gel breast prosthesis on the absorbed dose distribution of 9--20 MeV electron beams and 1.25--15 MV photon beams was studied. Compared to water measurements, at depths smaller than the practical range of the electron beams, the central axis depth dose values below the prothesis were lower for all energies by as much as 3.5%. However, at depths near the practical range, the central axis depth dose values for the prosthesis were greater than that of water by as much as 33%. Since this occurs near the end of the electron range, the resultant difference may not be clinically significant. Results of the effect of breast prosthesis on photon depth dose distributions reveal that no clinically significant perturbation is produced by the breast prosthesis using Co-60, 6- and 15-MV radiations.

  15. One-way optical transmission in silicon photonic crystal heterojunction with circular and square scatterers

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Dan, E-mail: liudanhu725@126.com [School of Physics and Mechanical & Electrical Engineering, Hubei University of Education, Wuhan, 430205 (China); Hu, Sen [School of Physics and Mechanical & Electrical Engineering, Hubei University of Education, Wuhan, 430205 (China); Gao, Yihua [Wuhan National Laboratory for Optoelectronics (WNLO), School of Physics, Huazhong University of Science and Technology (HUST), Wuhan, 430074 (China)

    2017-07-12

    A 2D orthogonal square-lattice photonic crystal (PC) heterojunction consisting of circular and square air holes in silicon is presented. Band structures are calculated using the plane wave expansion method, and the transmission properties are investigated by the finite-different time-domain simulations. Thanks to the higher diffraction orders excited when the circular and square holes are interlaced along the interface, one-way transmission phenomena can exist within wide frequency regions. The higher order diffraction is further enhanced through two different interface optimization designs proposed by modifying the PC structure of the hetero-interface. An orthogonal PC heterojunction for wide-band and efficient one-way transmission is constructed, and the maximum transmissivity is up to 78%. - Highlights: • Photonic crystal heterojunction with circular and square scatterers is first studied. • One-way transmission efficiency is closely related to the hetero-interface. • Wide-band and efficient one-way transmission is realized.

  16. Effect of silicone gel breast prosthesis on electron and photon dose distributions

    International Nuclear Information System (INIS)

    Krishnan, L.; St George, F.J.; Mansfield, C.M.; Krishnan, E.C.

    1983-01-01

    The effect of a silicone gel breast prosthesis on the absorbed dose distribution of 9-20 MeV electron beams and 1.25-15 MV photon beams was studied. Compared to water measurements, at depths smaller than the practical range of the electron beams, the central axis depth dose values below the prosthesis were lower for all energies by as much as 3.5%. However, at depths near the practical range, the central axis depth dose values for the prosthesis were greater than that of water by as much as 33%. Since this occurs near the end of the electron range, the resultant difference may not be clinically significant. Results of the effect of breast prosthesis on photon depth dose distributions reveal that no clinically significant perturbation is produced by the breast prosthesis using Co-60, 6- and 15-MV radiations

  17. Effect of silicone gel breast prosthesis on electron and photon dose distributions

    International Nuclear Information System (INIS)

    Krishnan, L.; St George, F.J.; Mansfield, C.M.; Krishnan, E.C.

    1983-01-01

    The effect of a silicone gel breast prosthesis on the absorbed dose distribution of 9--20 MeV electron beams and 1.25--15 MV photon beams was studied. Compared to water measurements, at depths smaller than the practical range of the electron beams, the central axis depth dose values below the prothesis were lower for all energies by as much as 3.5%. However, at depths near the practical range, the central axis depth dose values for the prosthesis were greater than that of water by as much as 33%. Since this occurs near the end of the electron range, the resultant difference may not be clinically significant. Results of the effect of breast prosthesis on photon depth dose distributions reveal that no clinically significant perturbation is produced by the breast prosthesis using Co-60, 6- and 15-MV radiations

  18. Schottky MSM junctions for carrier depletion in silicon photonic crystal microcavities.

    Science.gov (United States)

    Haret, Laurent-Daniel; Checoury, Xavier; Bayle, Fabien; Cazier, Nicolas; Boucaud, Philippe; Combrié, Sylvain; de Rossi, Alfredo

    2013-04-22

    Collection of free carriers is a key issue in silicon photonics devices. We show that a lateral metal-semiconductor-metal Schottky junction is an efficient and simple way of dealing with that issue in a photonic crystal microcavity. Using a simple electrode design, and taking into account the optical mode profile, the resulting carrier distribution in the structure is calculated. We show that the corresponding effective free carrier lifetime can be reduced by 50 times when the bias is tuned. This allows one to maintain a high cavity quality factor under strong optical injection. In the fabricated structures, carrier depletion is correlated with transmission spectra and directly visualized by Electron Beam Induced Current pictures. These measurements demonstrate the validity of this carrier extraction principle. The design can still be optimized in order to obtain full carrier depletion at a smaller energy cost.

  19. Advanced photonic filters based on cascaded Sagnac loop reflector resonators in silicon-on-insulator nanowires

    Science.gov (United States)

    Wu, Jiayang; Moein, Tania; Xu, Xingyuan; Moss, David J.

    2018-04-01

    We demonstrate advanced integrated photonic filters in silicon-on-insulator (SOI) nanowires implemented by cascaded Sagnac loop reflector (CSLR) resonators. We investigate mode splitting in these standing-wave (SW) resonators and demonstrate its use for engineering the spectral profile of on-chip photonic filters. By changing the reflectivity of the Sagnac loop reflectors (SLRs) and the phase shifts along the connecting waveguides, we tailor mode splitting in the CSLR resonators to achieve a wide range of filter shapes for diverse applications including enhanced light trapping, flat-top filtering, Q factor enhancement, and signal reshaping. We present the theoretical designs and compare the CSLR resonators with three, four, and eight SLRs fabricated in SOI. We achieve versatile filter shapes in the measured transmission spectra via diverse mode splitting that agree well with theory. This work confirms the effectiveness of using CSLR resonators as integrated multi-functional SW filters for flexible spectral engineering.

  20. Viability study of porous silicon photonic mirrors as secondary reflectors for solar concentration systems

    Energy Technology Data Exchange (ETDEWEB)

    de la Mora, M.B.; Jaramillo, O.A.; Nava, R.; Tagueena-Martinez, J. [Centro de Investigacion en Energia, Universidad Nacional Autonoma de Mexico, A. P. 34, 62580 Temixco, Morelos (Mexico); del Rio, J.A. [Centro Morelense de Innovacion y Transferencia Tecnologica, CCyTEM Camino Temixco a Emiliano Zapata, Km 0.3, Colonia Emiliano Zapata, 62760 Morelos (Mexico)

    2009-08-15

    In this paper we report the viability of using porous silicon photonic mirrors (PSPM) as secondary reflectors in solar concentration systems. The PSPM were fabricated with nanostructured porous silicon to reflect light from the visible range to the near infrared region (500-2500 nm), although this range could be tuned for specific wavelength applications. Our PSPM are multilayers of two alternated refractive indexes (1.5 and 2.0), where the condition of a quarter wavelength in the optical path was imposed. The PSPM were exposed to high radiation in a solar concentrator equipment. As a result, we observed a significant degradation of the mirrors at an approximated temperature of 900 C. In order to analyze the origin of the degradation of PSPM, we model the samples with a non-linear optical approach and study the effect of a temperature increase. Those theoretical and experimental studies allow us to conclude that the main phenomenon involved in the breakdown of the photonic mirrors is of thermal origin, produced by heterogeneous expansion of each layer. Our next step was to introduce a cooling system into the solar concentrator to keep the mirrors at approximately 70 C, with very good results. As a conclusion we propose the use of PSPM as selective secondary mirrors in solar concentration devices using temperature control to avoid thermal degradation. (author)

  1. Porous silicon photonic crystals as hosts for polymers, biopolymers, and magnetic nanoparticles

    Science.gov (United States)

    Li, Yang Yang

    This thesis describes the construction of one-dimensional photonic crystals of porous silicon by electrochemically etching and the use of these materials as hosts for polymers, biopolymers, and magnetic nanoparticles. The spectral features of the photonic crystals derive from a porosity gradient that is determined by the electrochemical etching parameters. Since the photonic crystals are constructed of a porous material, they can serve as hosts for other materials. The first chapter of the thesis provides an introduction to porous Si, templating techniques and the use of porous materials for controlled release of drugs. This latter section is added because much of the thesis work addresses the application of porous Si hosts for controlled release of drugs. In the second chapter, it is shown that the spectral properties of the porous Si photonic crystal template can be transferred to a variety of organic and biopolymers. It is demonstrated that these castings can be used as vapor sensors and as self-reporting, bioresorbable materials. If the template is not removed, porous Si polymer composites are formed. The third chapter discussed that by spray-coating a fine mist of polymer solution onto the porous Si film, robust and smooth micron-sized cylindrical photonic crystals suitable for bioassays can be prepared. The fourth chapter focuses on using porous Si photonic crystals as a host for magnetic nanoparticles. The magnetic nanoparticles in this work are found to adhere to the surface of the porous Si film as well to infiltrate the pore structure. In a demonstration of optical switching that may be useful for information display applications, flipping between the colored to dark sides by application of a magnetic field is found to occur at rates of as large as 175 Hz. As the host for soluble molecular species, porous Si photonic crystals can be impregnated from solution. The aggregates that form upon evaporation of solvent are found to scatter light from the resonant

  2. Entangled photon pair generation by spontaneous parametric down-conversion in finite-length one-dimensional photonic crystals

    Czech Academy of Sciences Publication Activity Database

    Centini, M.; Peřina ml., Jan; Sciscione, L.; Sibilia, C.; Scalora, M.; Bloemer, M.J.; Bertolotti, M.

    2005-01-01

    Roč. 72, 03 (2005), 033806/1-033806/11 ISSN 1050-2947 R&D Projects: GA MŠk(CZ) OC P11.003 Institutional research plan: CEZ:AV0Z10100522 Keywords : photon pair * photonic crystals * spontaneous parametric down-conversion Subject RIV: BH - Optics, Masers, Lasers Impact factor: 2.997, year: 2005

  3. A MoTe2-based light-emitting diode and photodetector for silicon photonic integrated circuits

    Science.gov (United States)

    Bie, Ya-Qing; Grosso, Gabriele; Heuck, Mikkel; Furchi, Marco M.; Cao, Yuan; Zheng, Jiabao; Bunandar, Darius; Navarro-Moratalla, Efren; Zhou, Lin; Efetov, Dmitri K.; Taniguchi, Takashi; Watanabe, Kenji; Kong, Jing; Englund, Dirk; Jarillo-Herrero, Pablo

    2017-12-01

    One of the current challenges in photonics is developing high-speed, power-efficient, chip-integrated optical communications devices to address the interconnects bottleneck in high-speed computing systems. Silicon photonics has emerged as a leading architecture, in part because of the promise that many components, such as waveguides, couplers, interferometers and modulators, could be directly integrated on silicon-based processors. However, light sources and photodetectors present ongoing challenges. Common approaches for light sources include one or few off-chip or wafer-bonded lasers based on III-V materials, but recent system architecture studies show advantages for the use of many directly modulated light sources positioned at the transmitter location. The most advanced photodetectors in the silicon photonic process are based on germanium, but this requires additional germanium growth, which increases the system cost. The emerging two-dimensional transition-metal dichalcogenides (TMDs) offer a path for optical interconnect components that can be integrated with silicon photonics and complementary metal-oxide-semiconductors (CMOS) processing by back-end-of-the-line steps. Here, we demonstrate a silicon waveguide-integrated light source and photodetector based on a p-n junction of bilayer MoTe2, a TMD semiconductor with an infrared bandgap. This state-of-the-art fabrication technology provides new opportunities for integrated optoelectronic systems.

  4. Virtual photon impulse of bunch, beampipe response, coherent RF Beamstrahlung; and BEPC bunch length, BES jam, virtual acceleration

    International Nuclear Information System (INIS)

    Jing Shen

    1993-01-01

    A brief EEE view of signal QED is presented. The research has been concentrated on the virtual photon modes of ultra relativistic shock wave in a bunch-beampipe system, and real photon modes of Coherent RF Beamstrahlung CRFB. Physically, the virtual photons emitted by a bunch were treated as a travelling pseudo wave packet in a flight coaxial cavity constructed by bunch-wakefield core and beampipe. Mathematically, it is a boundary solution of shock wave excited by ultra relativistic impulse of bunch. The new modes of solution: VTA, VTEM, VTM, VLE are virtual photon packets and RTE, RTM, RTEM are real photon modes of CRFB. By these results the author measured and corrected BEPC bunch length from signals of : (1) TOF reference of BES, (2) BPM of BEPC, (3) Colliding CRFB of BEPC - BES coupling signal, as well as (4) the ordinary method of Synchrotron Radiation. All results of the measured bunch lengths are in accordance with the design length of BEPC, and were verified by the BES data of vertex reconstruction of hadron events. The author also found that CRFB is the unknown jam source of BES electronics. VLE virtual photons can accelerate particles

  5. On-chip hybrid photonic-plasmonic light concentrator for nanofocusing in an integrated silicon photonics platform.

    Science.gov (United States)

    Luo, Ye; Chamanzar, Maysamreza; Apuzzo, Aniello; Salas-Montiel, Rafael; Nguyen, Kim Ngoc; Blaize, Sylvain; Adibi, Ali

    2015-02-11

    The enhancement and confinement of electromagnetic radiation to nanometer scale have improved the performances and decreased the dimensions of optical sources and detectors for several applications including spectroscopy, medical applications, and quantum information. Realization of on-chip nanofocusing devices compatible with silicon photonics platform adds a key functionality and provides opportunities for sensing, trapping, on-chip signal processing, and communications. Here, we discuss the design, fabrication, and experimental demonstration of light nanofocusing in a hybrid plasmonic-photonic nanotaper structure. We discuss the physical mechanisms behind the operation of this device, the coupling mechanisms, and how to engineer the energy transfer from a propagating guided mode to a trapped plasmonic mode at the apex of the plasmonic nanotaper with minimal radiation loss. Optical near-field measurements and Fourier modal analysis carried out using a near-field scanning optical microscope (NSOM) show a tight nanofocusing of light in this structure to an extremely small spot of 0.00563(λ/(2n(rmax)))(3) confined in 3D and an exquisite power input conversion of 92%. Our experiments also verify the mode selectivity of the device (low transmission of a TM-like input mode and high transmission of a TE-like input mode). A large field concentration factor (FCF) of about 4.9 is estimated from our NSOM measurement with a radius of curvature of about 20 nm at the apex of the nanotaper. The agreement between our theory and experimental results reveals helpful insights about the operation mechanism of the device, the interplay of the modes, and the gradual power transfer to the nanotaper apex.

  6. A filter technique for optimising the photon energy response of a silicon pin diode dosemeter

    International Nuclear Information System (INIS)

    Olsher, R.H.; Eisen, Y.

    1996-01-01

    Unless they are energy compensated, silicon PIN diodes used in electronic pocket dosemeters, have significant over-response below 200 keV. Siemens is using three diodes in parallel with individual filters to produce excellent energy and angular response. An algorithm based on the photon spectrum of a single diode could be used to flatten the energy response. The commercial practice is to use a single diode with a simple filter to flatten the energy response, despite the mediocre low energy photon. The filter technique with an opening has been used for energy compensating GM detectors and proportional counters and a new variation of it has been investigated which compensates the energy response of a silicon PIN diode and maintains an extended low energy response. It uses a composite filter of two or more materials with several openings whose individual area is in the range of 15% to 25% of the diode's active area. One opening is centred over the diode's active area and others are located at the periphery of the active area to preserve a good polar response to ±45 o . Monte Carlo radiation transport methods were used to simulate the coupled electron-photon transport through a Hamamatsu S2506-01 diode and to determine the energy response of the diode for a variety of filters. In current mode, the resultant dosemeter energy response relative to air dose was within -15% and +30% for 0 o incidence over the energy range from 15 keV to 1 MeV. In pulse mode, the resultant dosemeter energy response was within -25% and +50% for 0 o incidence over the energy range from 30 keV to 10 MeV. For ±45 o incidence, the energy response was within -25% and +40% from 40 keV to 10 MeV. Theoretical viability of the filter technique has been shown in this work (Author)

  7. Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials

    Directory of Open Access Journals (Sweden)

    Shouleh Nikzad

    2016-06-01

    Full Text Available Ultraviolet (UV studies in astronomy, cosmology, planetary studies, biological and medical applications often require precision detection of faint objects and in many cases require photon-counting detection. We present an overview of two approaches for achieving photon counting in the UV. The first approach involves UV enhancement of photon-counting silicon detectors, including electron multiplying charge-coupled devices and avalanche photodiodes. The approach used here employs molecular beam epitaxy for delta doping and superlattice doping for surface passivation and high UV quantum efficiency. Additional UV enhancements include antireflection (AR and solar-blind UV bandpass coatings prepared by atomic layer deposition. Quantum efficiency (QE measurements show QE > 50% in the 100–300 nm range for detectors with simple AR coatings, and QE ≅ 80% at ~206 nm has been shown when more complex AR coatings are used. The second approach is based on avalanche photodiodes in III-nitride materials with high QE and intrinsic solar blindness.

  8. Silicon Photonics: All-Optical Devices for Linear and Nonlinear Applications

    Science.gov (United States)

    Driscoll, Jeffrey B.

    Silicon photonics has grown rapidly since the first Si electro-optic switch was demonstrated in 1987, and the field has never grown more quickly than it has over the past decade, fueled by milestone achievements in semiconductor processing technologies for low loss waveguides, high-speed Si modulators, Si lasers, Si detectors, and an enormous toolbox of passive and active integrated devices. Silicon photonics is now on the verge of major commercialization breakthroughs, and optical communication links remain the force driving integrated and Si photonics towards the first commercial telecom and datacom transceivers; however other potential and future applications are becoming uncovered and refined as researchers reveal the benefits of manipulating photons on the nanoscale. This thesis documents an exploration into the unique guided-wave and nonlinear properties of deeply-scaled high-index-contrast sub-wavelength Si waveguides. It is found that the tight confinement inherent to single-mode channel waveguides on the silicon-on-insulator platform lead to a rich physics, which can be leveraged for new devices extending well beyond simple passive interconnects and electro-optic devices. The following chapters will concentrate, in detail, on a number of unique physical features of Si waveguides and extend these attributes towards new and interesting devices. Linear optical properties and nonlinear optical properties are investigated, both of which are strongly affected by tight optical confinement of the guided waveguide modes. As will be shown, tight optical confinement directly results in strongly vectoral modal components, where the electric and magnetic fields of the guided modes extend into all spatial dimensions, even along the axis of propagation. In fact, the longitudinal electric and magnetic field components can be just as strong as the transverse fields, directly affecting the modal group velocity and energy transport properties since the longitudinal fields

  9. Compact, lower-power-consumption wavelength tunable laser fabricated with silicon photonic-wire waveguide micro-ring resonators.

    Science.gov (United States)

    Chu, Tao; Fujioka, Nobuhide; Ishizaka, Masashige

    2009-08-03

    A wavelength tunable laser with an SOA and external double micro-ring resonator, which is fabricated with silicon photonic-wire waveguides, is demonstrated. To date, it is the first wavelength tunable laser fabricated with silicon photonic technology. The device is ultra compact, and its external resonator footprint is 700 x 450 microm, which is about 1/25 that of conventional tunable lasers fabricated with SiON waveguides. The silicon resonator shows a wide tuning range covering the C or L bands for DWDM optical communication. We obtained a maximum tuning span of 38 nm at a tuning power consumption of 26 mW, which is about 1/8 that of SiON-type resonators.

  10. Optical pendulum effect in one-dimensional diffraction-thick porous silicon based photonic crystals

    Energy Technology Data Exchange (ETDEWEB)

    Novikov, V. B., E-mail: vb.novikov@physics.msu.ru; Svyakhovskiy, S. E.; Maydykovskiy, A. I.; Murzina, T. V.; Mantsyzov, B. I. [Department of Physics, M. V. Lomonosov Moscow State University, Moscow 119991 (Russian Federation)

    2015-11-21

    We present the realization of the multiperiodic optical pendulum effect in 1D porous silicon photonic crystals (PhCs) under dynamical Bragg diffraction in the Laue scheme. The diffraction-thick PhC contained 360 spatial periods with a large variation of the refractive index of adjacent layers of 0.4. The experiments reveal switching of the light leaving the PhC between the two spatial directions, which correspond to Laue diffraction maxima, as the fundamental wavelength or polarization of the incident light is varied. A similar effect can be achieved when the temperature of the sample or the intensity of the additional laser beam illuminating the crystal are changed. We show that in our PhC structures, the spectral period of the pendulum effect is down to 5 nm, while the thermal period is about 10 °C.

  11. A polarization-diversity wavelength duplexer circuit in silicon-on-insulator photonic wires.

    Science.gov (United States)

    Bogaerts, Wim; Taillaert, Dirk; Dumon, Pieter; Van Thourhout, Dries; Baets, Roel; Pluk, Elroy

    2007-02-19

    We present a wavelength duplexer based on a compact arrayed waveguide grating (AWG) in silicon-on-insulator photonic wire waveguides. Polarization insensitive operation is achieved through a special polarization diversity approach in which we use 2-D grating fiber couplers as integrated polarization splitters. To mitigate the effects of process variations, we propagated both polarizations in opposite directions through the same AWG with a mere 600x350microm(2) footprint. This resulted in an on-chip insertion loss between -2.1dB and -6.9dB, crosstalk of -15dB, and only 0.66dB polarization dependent loss. This is the first demonstration of a functional polarization-diversity circuit implemented in SOI nanophotonic waveguides, including interfaces to single-mode fiber.

  12. Silicon photonic integrated circuits with electrically programmable non-volatile memory functions.

    Science.gov (United States)

    Song, J-F; Lim, A E-J; Luo, X-S; Fang, Q; Li, C; Jia, L X; Tu, X-G; Huang, Y; Zhou, H-F; Liow, T-Y; Lo, G-Q

    2016-09-19

    Conventional silicon photonic integrated circuits do not normally possess memory functions, which require on-chip power in order to maintain circuit states in tuned or field-configured switching routes. In this context, we present an electrically programmable add/drop microring resonator with a wavelength shift of 426 pm between the ON/OFF states. Electrical pulses are used to control the choice of the state. Our experimental results show a wavelength shift of 2.8 pm/ms and a light intensity variation of ~0.12 dB/ms for a fixed wavelength in the OFF state. Theoretically, our device can accommodate up to 65 states of multi-level memory functions. Such memory functions can be integrated into wavelength division mutiplexing (WDM) filters and applied to optical routers and computing architectures fulfilling large data downloading demands.

  13. Low loss silicon on insulator photonic crystal waveguides made by 193nm optical lithography.

    Science.gov (United States)

    Settle, Michael; Salib, Mike; Michaeli, Albert; Krauss, Thomas F

    2006-03-20

    We show the successful fabrication and operation of photonic crystal waveguides on SOI, with lower silicon dioxide cladding remaining, using 193 nm DUV lithography. We demonstrate that 193 nm lithography gives more process latitude, allowing a wider range of periods and hole diameters to be printed, as well as reducing the optical proximity effect to a minimum. The smallest period /hole size variation printed successfully was 280 nm and 150 nm, which is very promising for ambitious future designs. Lowest losses obtained were 14.2 +/- 2.0 dB/cm for a W1 waveguide in a 400 nm lattice with an r/a of 0.25 at a frequency of 0.257 a/lambda, which approaches the best losses reported for air-bridge type W1s.

  14. Silicon on-chip bandpass filters for the multiplexing of high sensitivity photonic crystal microcavity biosensors

    International Nuclear Information System (INIS)

    Yan, Hai; Zou, Yi; Yang, Chun-Ju; Chakravarty, Swapnajit; Wang, Zheng; Tang, Naimei; Chen, Ray T.; Fan, Donglei

    2015-01-01

    A method for the dense integration of high sensitivity photonic crystal (PC) waveguide based biosensors is proposed and experimentally demonstrated on a silicon platform. By connecting an additional PC waveguide filter to a PC microcavity sensor in series, a transmission passband is created, containing the resonances of the PC microcavity for sensing purpose. With proper engineering of the passband, multiple high sensitivity PC microcavity sensors can be integrated into microarrays and be interrogated simultaneously between a single input and a single output port. The concept was demonstrated with a 2-channel L55 PC biosensor array containing PC waveguide filters. The experiment showed that the sensors on both channels can be monitored simultaneously from a single output spectrum. Less than 3 dB extra loss for the additional PC waveguide filter is observed

  15. Radiation-hard Silicon Photonics for Future High Energy Physics Experiments

    CERN Document Server

    AUTHOR|(CDS)2089774; Troska, Jan

    Collisions of proton beams in the Large Hadron Collider at CERN produce very high radiation levels in the innermost parts of the particle detectors and enormous amounts of measurement data. Thousands of radiation-hard optical links based on directly-modulated laser diodes are thus installed in the particle detectors to transmit the measurement data to the processing electronics. The radiation levels in the innermost regions of future particle detectors will be much higher than they are now. Alternative solutions to laser-based radiation-hard optical links have to be found since the performance of laser diodes decreases beyond the operation margin of the system when irradiated to sufficiently high radiation levels. Silicon Photonics (SiPh) is currently being investigated as a promising alternative technology. First tests have indeed shown that SiPh Mach-Zehnder modulators (MZMs) are relatively insensitive to a high neutron fluence. However, they showed a strong degradation when exposed to ionizing radiation. ...

  16. Performance Prediction for a Hockey-Puck Silicon Crystal Monochromator at the Advanced Photon Source

    Science.gov (United States)

    Liu, Zunping; Rosenbaum, Gerd; Navrotski, Gary

    2014-03-01

    One of the Key Performance Parameters of the upgrade of the Advanced Photon Source (APS) is the increase of the storage ring current from 100 to 150 mA. In order to anticipate the impact of this increased heat load on the X-ray optics of the beamlines, the APS has implemented a systematic review, by means of finite element analysis and computational fluid dynamics, of the thermal performance of the different types of monochromators installed at the highest-heat-load insertion device beamlines. We present here simulations of the performance of a directly liquid nitrogen-cooled silicon crystal, the hockey-puck design. Calculations of the temperature and slope error at multiple ring currents under multiple operational conditions, including the influence of power, cooling, and diffraction surface thickness are included.

  17. High energy X-ray photon counting imaging using linear accelerator and silicon strip detectors

    Energy Technology Data Exchange (ETDEWEB)

    Tian, Y., E-mail: cycjty@sophie.q.t.u-tokyo.ac.jp [Department of Bioengineering, the University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Shimazoe, K.; Yan, X. [Department of Nuclear Engineering and Management, the University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Ueda, O.; Ishikura, T. [Fuji Electric Co., Ltd., Fuji, Hino, Tokyo 191-8502 (Japan); Fujiwara, T. [National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568 (Japan); Uesaka, M.; Ohno, M. [Nuclear Professional School, the University of Tokyo, 2-22 Shirakata-shirane, Tokai, Ibaraki 319-1188 (Japan); Tomita, H. [Department of Quantum Engineering, Nagoya University, Furo, Chikusa, Nagoya 464-8603 (Japan); Yoshihara, Y. [Department of Nuclear Engineering and Management, the University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Takahashi, H. [Department of Bioengineering, the University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Department of Nuclear Engineering and Management, the University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2016-09-11

    A photon counting imaging detector system for high energy X-rays is developed for on-site non-destructive testing of thick objects. One-dimensional silicon strip (1 mm pitch) detectors are stacked to form a two-dimensional edge-on module. Each detector is connected to a 48-channel application specific integrated circuit (ASIC). The threshold-triggered events are recorded by a field programmable gate array based counter in each channel. The detector prototype is tested using 950 kV linear accelerator X-rays. The fast CR shaper (300 ns pulse width) of the ASIC makes it possible to deal with the high instant count rate during the 2 μs beam pulse. The preliminary imaging results of several metal and concrete samples are demonstrated.

  18. Silicon on-chip bandpass filters for the multiplexing of high sensitivity photonic crystal microcavity biosensors

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Hai, E-mail: hai.yan@utexas.edu; Zou, Yi; Yang, Chun-Ju [Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, 10100 Burnet Rd., Austin, Texas 78758 (United States); Chakravarty, Swapnajit, E-mail: swapnajit.chakravarty@omegaoptics.com [Omega Optics, Inc., 8500 Shoal Creek Blvd., Austin, Texas 78757 (United States); Wang, Zheng [Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, 10100 Burnet Rd., Austin, Texas 78758 (United States); Materials Science and Engineering Program, Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712 (United States); Tang, Naimei; Chen, Ray T., E-mail: raychen@uts.cc.utexas.edu [Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, 10100 Burnet Rd., Austin, Texas 78758 (United States); Omega Optics, Inc., 8500 Shoal Creek Blvd., Austin, Texas 78757 (United States); Fan, Donglei [Materials Science and Engineering Program, Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712 (United States); Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States)

    2015-03-23

    A method for the dense integration of high sensitivity photonic crystal (PC) waveguide based biosensors is proposed and experimentally demonstrated on a silicon platform. By connecting an additional PC waveguide filter to a PC microcavity sensor in series, a transmission passband is created, containing the resonances of the PC microcavity for sensing purpose. With proper engineering of the passband, multiple high sensitivity PC microcavity sensors can be integrated into microarrays and be interrogated simultaneously between a single input and a single output port. The concept was demonstrated with a 2-channel L55 PC biosensor array containing PC waveguide filters. The experiment showed that the sensors on both channels can be monitored simultaneously from a single output spectrum. Less than 3 dB extra loss for the additional PC waveguide filter is observed.

  19. Label-free, multiplexed detection of bacterial tmRNA using silicon photonic microring resonators.

    Science.gov (United States)

    Scheler, Ott; Kindt, Jared T; Qavi, Abraham J; Kaplinski, Lauris; Glynn, Barry; Barry, Thomas; Kurg, Ants; Bailey, Ryan C

    2012-01-01

    A label-free biosensing method for the sensitive detection and identification of bacterial transfer-messenger RNA (tmRNA) is presented employing arrays of silicon photonic microring resonators. Species specific tmRNA molecules are targeted by complementary DNA capture probes that are covalently attached to the sensor surface. Specific hybridization is monitored in near real-time by observing the resonance wavelength shift of each individual microring. The sensitivity of the biosensing platform allowed for detection down to 53 fmol of Streptococcus pneumoniae tmRNA, equivalent to approximately 3.16×10(7) CFU of bacteria. The simplicity and scalability of this biosensing approach makes it a promising tool for the rapid identification of different bacteria via tmRNA profiling. Copyright © 2012 Elsevier B.V. All rights reserved.

  20. Designing High-Efficiency Thin Silicon Solar Cells Using Parabolic-Pore Photonic Crystals

    Science.gov (United States)

    Bhattacharya, Sayak; John, Sajeev

    2018-04-01

    We demonstrate the efficacy of wave-interference-based light trapping and carrier transport in parabolic-pore photonic-crystal, thin-crystalline silicon (c -Si) solar cells to achieve above 29% power conversion efficiencies. Using a rigorous solution of Maxwell's equations through a standard finite-difference time domain scheme, we optimize the design of the vertical-parabolic-pore photonic crystal (PhC) on a 10 -μ m -thick c -Si solar cell to obtain a maximum achievable photocurrent density (MAPD) of 40.6 mA /cm2 beyond the ray-optical, Lambertian light-trapping limit. For a slanted-parabolic-pore PhC that breaks x -y symmetry, improved light trapping occurs due to better coupling into parallel-to-interface refraction modes. We achieve the optimum MAPD of 41.6 mA /cm2 for a tilt angle of 10° with respect to the vertical axis of the pores. This MAPD is further improved to 41.72 mA /cm2 by introducing a 75-nm SiO2 antireflective coating on top of the solar cell. We use this MAPD and the associated charge-carrier generation profile as input for a numerical solution of Poisson's equation coupled with semiconductor drift-diffusion equations using a Shockley-Read-Hall and Auger recombination model. Using experimentally achieved surface recombination velocities of 10 cm /s , we identify semiconductor doping profiles that yield power conversion efficiencies over 29%. Practical considerations of additional upper-contact losses suggest efficiencies close to 28%. This improvement beyond the current world record is largely due to an open-circuit voltage approaching 0.8 V enabled by reduced bulk recombination in our thin silicon architecture while maintaining a high short-circuit current through wave-interference-based light trapping.

  1. III-V-on-Silicon Photonic Integrated Circuits for Spectroscopic Sensing in the 2-4 μm Wavelength Range.

    Science.gov (United States)

    Wang, Ruijun; Vasiliev, Anton; Muneeb, Muhammad; Malik, Aditya; Sprengel, Stephan; Boehm, Gerhard; Amann, Markus-Christian; Šimonytė, Ieva; Vizbaras, Augustinas; Vizbaras, Kristijonas; Baets, Roel; Roelkens, Gunther

    2017-08-04

    The availability of silicon photonic integrated circuits (ICs) in the 2-4 μm wavelength range enables miniature optical sensors for trace gas and bio-molecule detection. In this paper, we review our recent work on III-V-on-silicon waveguide circuits for spectroscopic sensing in this wavelength range. We first present results on the heterogeneous integration of 2.3 μm wavelength III-V laser sources and photodetectors on silicon photonic ICs for fully integrated optical sensors. Then a compact 2 μm wavelength widely tunable external cavity laser using a silicon photonic IC for the wavelength selective feedback is shown. High-performance silicon arrayed waveguide grating spectrometers are also presented. Further we show an on-chip photothermal transducer using a suspended silicon-on-insulator microring resonator used for mid-infrared photothermal spectroscopy.

  2. Ultrafast all-optical order-to-chaos transition in silicon photonic crystal chips

    KAUST Repository

    Bruck, Roman

    2016-06-08

    The interaction of light with nanostructured materials provides exciting new opportunities for investigating classical wave analogies of quantum phenomena. A topic of particular interest forms the interplay between wave physics and chaos in systems where a small perturbation can drive the behavior from the classical to chaotic regime. Here, we report an all-optical laser-driven transition from order to chaos in integrated chips on a silicon photonics platform. A square photonic crystal microcavity at telecom wavelengths is tuned from an ordered into a chaotic regime through a perturbation induced by ultrafast laser pulses in the ultraviolet range. The chaotic dynamics of weak probe pulses in the near infrared is characterized for different pump-probe delay times and at various positions in the cavity, with high spatial accuracy. Our experimental analysis, confirmed by numerical modelling based on random matrices, demonstrates that nonlinear optics can be used to control reversibly the chaotic behavior of light in optical resonators. (Figure presented.) . © 2016 by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

  3. An integrated nonlinear optical loop mirror in silicon photonics for all-optical signal processing

    Directory of Open Access Journals (Sweden)

    Zifei Wang

    2018-02-01

    Full Text Available The nonlinear optical loop mirror (NOLM has been studied for several decades and has attracted considerable attention for applications in high data rate optical communications and all-optical signal processing. The majority of NOLM research has focused on silica fiber-based implementations. While various fiber designs have been considered to increase the nonlinearity and manage dispersion, several meters to hundreds of meters of fiber are still required. On the other hand, there is increasing interest in developing photonic integrated circuits for realizing signal processing functions. In this paper, we realize the first-ever passive integrated NOLM in silicon photonics and demonstrate its application for all-optical signal processing. In particular, we show wavelength conversion of 10 Gb/s return-to-zero on-off keying (RZ-OOK signals over a wavelength range of 30 nm with error-free operation and a power penalty of less than 2.5 dB, we achieve error-free nonreturn to zero (NRZ-to-RZ modulation format conversion at 10 Gb/s also with a power penalty of less than 2.8 dB, and we obtain error-free all-optical time-division demultiplexing of a 40 Gb/s RZ-OOK data signal into its 10 Gb/s tributary channels with a maximum power penalty of 3.5 dB.

  4. Count rate performance of a silicon-strip detector for photon-counting spectral CT

    Energy Technology Data Exchange (ETDEWEB)

    Liu, X., E-mail: olivia@mi.physics.kth.se; Grönberg, F.; Sjölin, M.; Karlsson, S.; Danielsson, M.

    2016-08-11

    A silicon-strip detector is developed for spectral computed tomography. The detector operates in photon-counting mode and allows pulse-height discrimination with 8 adjustable energy bins. In this work, we evaluate the count-rate performance of the detector in a clinical CT environment. The output counts of the detector are measured for x-ray tube currents up to 500 mA at 120 kV tube voltage, which produces a maximum photon flux of 485 Mphotons/s/mm{sup 2} for the unattenuated beam. The corresponding maximum count-rate loss of the detector is around 30% and there are no saturation effects. A near linear relationship between the input and output count rates can be observed up to 90 Mcps/mm{sup 2}, at which point only 3% of the input counts are lost. This means that the loss in the diagnostically relevant count-rate region is negligible. A semi-nonparalyzable dead-time model is used to describe the count-rate performance of the detector, which shows a good agreement with the measured data. The nonparalyzable dead time τ{sub n} for 150 evaluated detector elements is estimated to be 20.2±5.2 ns.

  5. Count rate performance of a silicon-strip detector for photon-counting spectral CT

    Science.gov (United States)

    Liu, X.; Grönberg, F.; Sjölin, M.; Karlsson, S.; Danielsson, M.

    2016-08-01

    A silicon-strip detector is developed for spectral computed tomography. The detector operates in photon-counting mode and allows pulse-height discrimination with 8 adjustable energy bins. In this work, we evaluate the count-rate performance of the detector in a clinical CT environment. The output counts of the detector are measured for x-ray tube currents up to 500 mA at 120 kV tube voltage, which produces a maximum photon flux of 485 Mphotons/s/mm2 for the unattenuated beam. The corresponding maximum count-rate loss of the detector is around 30% and there are no saturation effects. A near linear relationship between the input and output count rates can be observed up to 90 Mcps/mm2, at which point only 3% of the input counts are lost. This means that the loss in the diagnostically relevant count-rate region is negligible. A semi-nonparalyzable dead-time model is used to describe the count-rate performance of the detector, which shows a good agreement with the measured data. The nonparalyzable dead time τn for 150 evaluated detector elements is estimated to be 20.2±5.2 ns.

  6. Local heating of discrete droplets using magnetic porous silicon-based photonic crystals.

    Science.gov (United States)

    Park, Ji-Ho; Derfus, Austin M; Segal, Ester; Vecchio, Kenneth S; Bhatia, Sangeeta N; Sailor, Michael J

    2006-06-21

    This paper describes a method for local heating of discrete microliter-scale liquid droplets. The droplets are covered with magnetic porous Si microparticles, and heating is achieved by application of an external alternating electromagnetic field. The magnetic porous Si microparticles consist of two layers. The top layer contains a photonic code and it is hydrophobic, with surface-grafted dodecyl moieties. The bottom layer consists of a hydrophilic silicon oxide host layer that is infused with Fe3O4 nanoparticles. The amphiphilic microparticles spontaneously align at the interface of a water droplet immersed in mineral oil, allowing manipulation of the droplets by application of a magnetic field. Application of an oscillating magnetic field (338 kHz, 18 A rms current in a coil surrounding the experiment) generates heat in the superparamagnetic particles that can raise the temperature of the enclosed water droplet to >80 degrees C within 5 min. A simple microfluidics application is demonstrated: combining complementary DNA strands contained in separate droplets and then thermally inducing dehybridization of the conjugate. The complementary oligonucleotides were conjugated with the cyanine dye fluorophores Cy3 and Cy5 to quantify the melting/rebinding reaction by fluorescence resonance energy transfer (FRET). The magnetic porous Si microparticles were prepared as photonic crystals, containing spectral codes that allowed the identification of the droplets by reflectivity spectroscopy. The technique demonstrates the feasibility of tagging, manipulating, and heating small volumes of liquids without the use of conventional microfluidic channel and heating systems.

  7. Meshed doped silicon photonic crystals for manipulating near-field thermal radiation

    Science.gov (United States)

    Elzouka, Mahmoud; Ndao, Sidy

    2018-01-01

    The ability to control and manipulate heat flow is of great interest to thermal management and thermal logic and memory devices. Particularly, near-field thermal radiation presents a unique opportunity to enhance heat transfer while being able to tailor its characteristics (e.g., spectral selectivity). However, achieving nanometric gaps, necessary for near-field, has been and remains a formidable challenge. Here, we demonstrate significant enhancement of the near-field heat transfer through meshed photonic crystals with separation gaps above 0.5 μm. Using a first-principle method, we investigate the meshed photonic structures numerically via finite-difference time-domain technique (FDTD) along with the Langevin approach. Results for doped-silicon meshed structures show significant enhancement in heat transfer; 26 times over the non-meshed corrugated structures. This is especially important for thermal management and thermal rectification applications. The results also support the premise that thermal radiation at micro scale is a bulk (rather than a surface) phenomenon; the increase in heat transfer between two meshed-corrugated surfaces compared to the flat surface (8.2) wasn't proportional to the increase in the surface area due to the corrugations (9). Results were further validated through good agreements between the resonant modes predicted from the dispersion relation (calculated using a finite-element method), and transmission factors (calculated from FDTD).

  8. Optical nose based on porous silicon photonic crystal infiltrated with ionic liquids

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Haijuan [Institute of Microanalytical System, Department of Chemistry, Zhejiang University, Hangzhou, 3100058 (China); Zhejiang Academy of Medical Sciences, Hangzhou, 310013 (China); Lin, Leimiao; Liu, Dong; Chen, Qiaofen [Institute of Microanalytical System, Department of Chemistry, Zhejiang University, Hangzhou, 3100058 (China); Wu, Jianmin, E-mail: wjm-st1@zju.edu.cn [Institute of Microanalytical System, Department of Chemistry, Zhejiang University, Hangzhou, 3100058 (China)

    2017-02-08

    A photonic-nose for the detection and discrimination of volatile organic compounds (VOCs) was constructed. Each sensing element on the photonic sensor array was formed by infiltrating a specific type of ionic liquid (IL) into the pore channel of a patterned porous silicon (PSi) chip. Upon exposure to VOC, the density of IL dramatically decreased due to the nano-confinement effect. As a result, the IL located in pore channel expanded its volume and protrude out of the pore channel, leading to the formation of microdroplets on the PSi surface. These VOC-stimulated microdroplets could scatter the light reflected from the PSi rugate filter, thereby producing an optical response to VOC. The intensity of the optical response produced by IL/PSi sensor mainly depends on the size and shape of microdroplets, which is related to the concentration of VOC and the physi-chemical propertied of ILs. For ethanol vapor, the optical response has linear relationship with its relative vapor pressure within 0–60%. The LOD of the IL/PSi sensor for ethanol detection is calculated to be 1.3 ppm. It takes around 30 s to reach a full optical response, while the time for recovery is less than 1 min. In addition, the sensor displayed good stability and reproducibility. Owing to the different molecular interaction between IL and VOC, the ILs/PSi sensor array can generate a unique cross-reactive “fingerprint” in response to a specific type of VOC analyte. With the assistance of image technologies and principle components analysis (PCA), rapid discrimination of VOC analyte could be achieved based on the pattern recognition of photonic sensor array. The technology established in this work allows monitoring in-door air pollution in a visualized way. - Highlights: • Ionic liquids confined in the pore channel of porous silicon (PSi) can form microdroplets on the PSi surface upon exposure to VOCs. • These VOC-stimulated microdroplets could scattered the light reflected from the PSi rugate

  9. Enhancing the protein resistance of silicone via surface-restructuring PEO-silane amphiphiles with variable PEO length.

    Science.gov (United States)

    Rufin, M A; Gruetzner, J A; Hurley, M J; Hawkins, M L; Raymond, E S; Raymond, J E; Grunlan, M A

    2015-04-14

    Silicones with superior protein resistance were produced by bulk-modification with poly(ethylene oxide) (PEO)-silane amphiphiles that demonstrated a higher capacity to restructure to the surface-water interface versus conventional non-amphiphilic PEO-silanes. The PEO-silane amphiphiles were prepared with a single siloxane tether length but variable PEO segment lengths: α-(EtO) 3 Si(CH 2 ) 2 -oligodimethylsiloxane 13 - block -poly(ethylene oxide) n -OCH 3 ( n = 3, 8, and 16). Conventional PEO-silane analogues ( n = 3, 8 and 16) as well as a siloxane tether-silane (i.e. no PEO segment) were prepared as controls. When surface-grafted onto silicon wafer, PEO-silane amphiphiles produced surfaces that were more hydrophobic and thus more adherent towards fibrinogen versus the corresponding PEO-silane. However, when blended into a silicone, PEO-silane amphiphiles exhibited rapid restructuring to the surface-water interface and excellent protein resistance whereas the PEO-silanes did not. Silicones modified with PEO-silane amphiphiles of PEO segment lengths n = 8 and 16 achieved the highest protein resistance.

  10. Low-loss, silicon integrated, aluminum nitride photonic circuits and their use for electro-optic signal processing.

    Science.gov (United States)

    Xiong, Chi; Pernice, Wolfram H P; Tang, Hong X

    2012-07-11

    Photonic miniaturization requires seamless integration of linear and nonlinear optical components to achieve passive and active functions simultaneously. Among the available material systems, silicon photonics holds immense promise for optical signal processing and on-chip optical networks. However, silicon is limited to wavelengths above 1.1 μm and does not provide the desired lowest order optical nonlinearity for active signal processing. Here we report the integration of aluminum nitride (AlN) films on silicon substrates to bring active functionalities to chip-scale photonics. Using CMOS-compatible sputtered thin films we fabricate AlN-on-insulator waveguides that exhibit low propagation loss (0.6 dB/cm). Exploiting AlN's inherent Pockels effect we demonstrate electro-optic modulation up to 4.5 Gb/s with very low energy consumption (down to 10 fJ/bit). The ultrawide transparency window of AlN devices also enables high speed modulation at visible wavelengths. Our low cost, wideband, carrier-free photonic circuits hold promise for ultralow power and high-speed signal processing at the microprocessor chip level.

  11. Initial steps toward the realization of large area arrays of single photon counting pixels based on polycrystalline silicon TFTs

    Science.gov (United States)

    Liang, Albert K.; Koniczek, Martin; Antonuk, Larry E.; El-Mohri, Youcef; Zhao, Qihua; Jiang, Hao; Street, Robert A.; Lu, Jeng Ping

    2014-03-01

    The thin-film semiconductor processing methods that enabled creation of inexpensive liquid crystal displays based on amorphous silicon transistors for cell phones and televisions, as well as desktop, laptop and mobile computers, also facilitated the development of devices that have become ubiquitous in medical x-ray imaging environments. These devices, called active matrix flat-panel imagers (AMFPIs), measure the integrated signal generated by incident X rays and offer detection areas as large as ~43×43 cm2. In recent years, there has been growing interest in medical x-ray imagers that record information from X ray photons on an individual basis. However, such photon counting devices have generally been based on crystalline silicon, a material not inherently suited to the cost-effective manufacture of monolithic devices of a size comparable to that of AMFPIs. Motivated by these considerations, we have developed an initial set of small area prototype arrays using thin-film processing methods and polycrystalline silicon transistors. These prototypes were developed in the spirit of exploring the possibility of creating large area arrays offering single photon counting capabilities and, to our knowledge, are the first photon counting arrays fabricated using thin film techniques. In this paper, the architecture of the prototype pixels is presented and considerations that influenced the design of the pixel circuits, including amplifier noise, TFT performance variations, and minimum feature size, are discussed.

  12. High coincidence-to-accidental ratio continuous-wave photon-pair generation in a grating-coupled silicon strip waveguide

    DEFF Research Database (Denmark)

    Guo, Kai; Christensen, Erik Nicolai; Christensen, Jesper Bjerge

    2017-01-01

    We demonstrate a very high coincidence-to-accidental ratio of 673 using continuous-wave photon-pair generation in a silicon strip waveguide through spontaneous four-wave mixing. This result is obtained by employing on-chip photonic-crystal-based grating couplers for both low-loss fiber-to-chip co......We demonstrate a very high coincidence-to-accidental ratio of 673 using continuous-wave photon-pair generation in a silicon strip waveguide through spontaneous four-wave mixing. This result is obtained by employing on-chip photonic-crystal-based grating couplers for both low-loss fiber...

  13. Effect of back reflectors on photon absorption in thin-film amorphous silicon solar cells

    Science.gov (United States)

    Hossain, Mohammad I.; Qarony, Wayesh; Hossain, M. Khalid; Debnath, M. K.; Uddin, M. Jalal; Tsang, Yuen Hong

    2017-10-01

    In thin-film solar cells, the photocurrent conversion productivity can be distinctly boosted-up utilizing a proper back reflector. Herein, the impact of different smooth and textured back reflectors was explored and effectuated to study the optical phenomena with interface engineering strategies and characteristics of transparent contacts. A unique type of wet-chemically textured glass-substrate 3D etching mask used in superstrate (p-i-n) amorphous silicon-based solar cell along with legitimated back reflector permits joining the standard light-trapping methodologies, which are utilized to upgrade the energy conversion efficiency (ECE). To investigate the optical and electrical properties of solar cell structure, the optical simulations in three-dimensional measurements (3D) were performed utilizing finite-difference time-domain (FDTD) technique. This design methodology allows to determine the power losses, quantum efficiencies, and short-circuit current densities of various layers in such solar cell. The short-circuit current densities for different reflectors were varied from 11.50 to 13.27 and 13.81 to 16.36 mA/cm2 for the smooth and pyramidal textured solar cells, individually. Contrasted with the comparable flat reference cell, the short-circuit current density of textured solar cell was increased by around 24%, and most extreme outer quantum efficiencies rose from 79 to 86.5%. The photon absorption was fundamentally improved in the spectral region from 600 to 800 nm with no decrease of photocurrent shorter than 600-nm wavelength. Therefore, these optimized designs will help to build the effective plans next-generation amorphous silicon-based solar cells.

  14. Development of silicon photonic microring resonator biosensors for multiplexed cytokine assays and in vitro diagnostics

    Science.gov (United States)

    Luchansky, Matthew Sam

    In order to guide critical care therapies that are personalized to a patient's unique disease state, a diagnostic or theranostic medical device must quickly provide a detailed biomolecular understanding of disease onset and progression. This detailed molecular understanding of cellular processes and pathways requires the ability to measure multiple analytes in parallel. Though many traditional sensing technologies for biomarker analysis and fundamental biological studies (i.e. enzyme-linked immunosorbent assays, real-time polymerase chain reaction, etc.) rely on single-parameter measurements, it has become increasingly clear that the inherent complexity of many human illnesses and pathways necessitates quantitative and multiparameter analysis of biological samples. Currently used analytical methods are deficient in that they often provide either highly quantitative data for a single biomarker or qualitative data for many targets, but methods that simultaneously provide highly quantitative analysis of many targets have yet to be adequately developed. Fields such as medical diagnostics and cellular biology would benefit greatly from a technology that enables rapid, quantitative and reproducible assays for many targets within a single sample. In an effort to fill this unmet need, this doctoral dissertation describes the development of a clinically translational biosensing technology based on silicon photonics and developed in the chemistry research laboratory of Ryan C. Bailey. Silicon photonic microring resonators, a class of high-Q optical sensors, represent a promising platform for rapid, multiparameter in vitro measurements. The original device design utilizes 32-ring arrays for real-time biomolecular sensing without fluorescent labels, and these optical biosensors display great potential for more highly multiplexed (100s-1000s) measurements based on the impressive scalability of silicon device fabrication. Though this technology can be used to detect a variety of

  15. On nanostructured silicon success

    DEFF Research Database (Denmark)

    Sigmund, Ole; Jensen, Jakob Søndergaard; Frandsen, Lars Hagedorn

    2016-01-01

    Recent Letters by Piggott et al. 1 and Shen et al. 2 claim the smallest ever dielectric wave length and polarization splitters. The associated News & Views article by Aydin3 states that these works “are the first experimental demonstration of on-chip, silicon photonic components based on complex...

  16. Coupling power into accelerating mode of a three-dimensional silicon woodpile photonic band-gap waveguide

    OpenAIRE

    Ziran Wu; Robert Joel England; Cho-Kuen Ng; Benjamin Cowan; Christopher McGuinness; Chunghun Lee; Minghao Qi; Sami Tantawi

    2014-01-01

    Silicon woodpile photonic crystals provide a base structure with which to build a three-dimensional dielectric waveguide system for high-gradient laser-driven acceleration. To realize an on-chip woodpile laser accelerator, a key component is the power coupler to deliver laser power to the fundamental accelerating mode. The woodpile waveguide is periodically loaded in the longitudinal direction; therefore simple cross-sectional mode profile matching is not sufficient to launch the accelerating...

  17. Dosimetric properties characterization of silicon diodes used in photon beam radiotherapy

    International Nuclear Information System (INIS)

    Bizetto, Cesar Augusto

    2013-01-01

    In the current work it was studied the performance of epitaxial (EPI) and float zone (FZ) silicon diodes as on-line dosimeters for megavoltage (EPI diode) and orthovoltage (EPI and FZ diode) photon beam radiotherapy. In order to be used as dosimeters the diodes were enclosed in black polymethylmethacrylate (PMMA) probes. The devices were then connected, on photovoltaic mode, to an electrometer Keithley® 6517B to allow measurements of the photocurrent. The irradiations were performed with 6 and 18 MV photon beams (Siemens Primus® linear accelerator), 6 and 15 MV (Novalis TX®) and 10, 25, 30 and 50 kV of a Pantak / Seifert X ray radiation device. During the measurements with the Siemens Primus the diodes were held between PMMA plates placed at 10.0 cm depth. When using Novalis TX® the devices were held between solid water plates placed at 50 cm depth. In both cases the diodes were centered in a radiation field of 10 x 10 cm 2 , with the source-to-surface distance (SSD) kept at 100 cm. In measurements with orthovoltage photon beams the diodes were placed 50.0 cm from the tube in a radiation field of 8 cm diameter. The dose-rate dependency was studied for 6 and 15 MV (varying the dose-rate from 100 to 600 monitor units per minute) and for the 50 kV beam by varying the current tube from 2 to 20 mA. All devices showed linear response with dose rate and, within uncertainties the charge collected is independent of dose rate. The current signals induced showed good instantaneous repeatability of the diodes, characterized by coefficients of variation of current (CV) smaller than 1.14% (megavoltage beams) and 0.15% for orthovoltage beams and coefficients of variation of charge (CV) smaller than 1.84% (megavoltage beams) and 1.67% (orthovoltage beams). The dose response curves were quite linear with linear correlation coefficients better than 0.9999 for all diodes. (author)

  18. First operation of a hybrid photon detector prototype with electrostatic cross-focussing and integrated silicon pixel readout

    CERN Document Server

    Alemi, M; Gys, Thierry; Mikulec, B; Piedigrossi, D; Puertolas, D; Rosso, E; Schomaker, R; Snoeys, W; Wyllie, Ken H

    2000-01-01

    We report on the first operation of a hybrid photon detector prototype with integrated silicon pixel readout for the ring imaging Cherenkov detectors of the LHCb experiment. The photon detector is based on a cross-focussed image intensifier tube geometry where the image is de-magnified by a factor of 4. The anode consists of a silicon pixel array, bump-bonded to a binary readout chip with matching pixel electronics. The prototype has been characterized using a low-intensity light-emitting diode operated in pulsed mode. Its performance in terms of single-photoelectron detection efficiency and imaging properties is presented. A model of photoelectron detection is proposed, and is shown to be in good agreement with the experimental data. It includes an estimate of the charge signal generated in the silicon detector, and the combined effects of the comparator threshold spread of the pixel readout chip, charge sharing at the pixel boundaries and back-scattering of the photoelectrons at the silicon detector surface...

  19. First operation of a hybrid photon detector prototype with electrostatic cross-focussing and integrated silicon pixel readout

    International Nuclear Information System (INIS)

    Alemi, M.; Campbell, M.; Gys, T.; Mikulec, B.; Piedigrossi, D.; Puertolas, D.; Rosso, E.; Schomaker, R.; Snoeys, W.; Wyllie, K.

    2000-01-01

    We report on the first operation of a hybrid photon detector prototype with integrated silicon pixel readout for the ring imaging Cherenkov detectors of the LHCb experiment. The photon detector is based on a cross-focussed image intensifier tube geometry where the image is de-magnified by a factor of 4. The anode consists of a silicon pixel array, bump-bonded to a binary readout chip with matching pixel electronics. The prototype has been characterized using a low-intensity light-emitting diode operated in pulsed mode. Its performance in terms of single-photoelectron detection efficiency and imaging properties is presented. A model of photoelectron detection is proposed, and is shown to be in good agreement with the experimental data. It includes an estimate of the charge signal generated in the silicon detector, and the combined effects of the comparator threshold spread of the pixel readout chip, charge sharing at the pixel boundaries and back-scattering of the photoelectrons at the silicon detector surface

  20. First operation of a hybrid photon detector prototype with electrostatic cross-focussing and integrated silicon pixel readout

    Energy Technology Data Exchange (ETDEWEB)

    Alemi, M.; Campbell, M.; Gys, T. E-mail: thierry.gys@cern.ch; Mikulec, B.; Piedigrossi, D.; Puertolas, D.; Rosso, E.; Schomaker, R.; Snoeys, W.; Wyllie, K

    2000-07-11

    We report on the first operation of a hybrid photon detector prototype with integrated silicon pixel readout for the ring imaging Cherenkov detectors of the LHCb experiment. The photon detector is based on a cross-focussed image intensifier tube geometry where the image is de-magnified by a factor of 4. The anode consists of a silicon pixel array, bump-bonded to a binary readout chip with matching pixel electronics. The prototype has been characterized using a low-intensity light-emitting diode operated in pulsed mode. Its performance in terms of single-photoelectron detection efficiency and imaging properties is presented. A model of photoelectron detection is proposed, and is shown to be in good agreement with the experimental data. It includes an estimate of the charge signal generated in the silicon detector, and the combined effects of the comparator threshold spread of the pixel readout chip, charge sharing at the pixel boundaries and back-scattering of the photoelectrons at the silicon detector surface.

  1. Supercontinuum generation in silicon nanowire embedded photonic crystal fibers with different core geometries

    Science.gov (United States)

    Abdosllam, M. Abobaker; Gunasundari, E.; Senthilnathan, K.; Sivabalan, S.; Nakkeeran, K.; Ramesh Babu, P.

    2014-07-01

    We design various silicon nanowire embedded photonic crystal fibers (SN-PCFs) with different core geometries, namely, circular, rectangular and elliptical using finite element method. Further, we study the optical properties such as group velocity dispersion (GVD), third order dispersion (TOD) of x and y-polarized modes and effective nonlinearity for a wavelength range from 0.8 to 1.6 μm. The proposed structure exhibits almost flat GVD (0.8 to 1.2 μm wavelength), zero GVD (≍ 1.31 μm) and small TOD (0.00069 ps3/m) at 1.1 μm wavelength and high nonlinearity (2916 W-1m-1) at 0.8 μm wavelength for a 300 nm core diameter of circular core SN-PCF. Besides, we have been able to demonstrate the supercontinuum for the different core geometries at 1.3 μm wavelength with a less input power of 25 W for the input pulse of 20 fs. The numerical simulation results reveal that the proposed circular core SN-PCF could generate the supercontinuum of wider bandwidth (900 nm) compared to that from rest of the geometries. This enhanced bandwidth turns out to be a boon for optical coherence tomography (OCT) system.

  2. Design and simulation of MEMS microvalves for silicon photonic biosensor chip

    Science.gov (United States)

    Amemiya, Yoshiteru; Nakashima, Yuuto; Maeda, Jun; Yokoyama, Shin

    2018-04-01

    For the early and easy diagnosis of diseases, we have proposed a silicon photonic biosensor chip with two kinds of MEMS microvalves for a multiple-item detection system. The driving voltage of the vertical type with the circular-plate capacitor structure and that of the lateral type with the comb-shaped electrode are investigated. From mechanical calculations, the driving voltage of the vertical type is estimated to be 30 V and that of the lateral type to be 15 V. The propagation loss at the intersecting waveguides of arrayed ring-resonator biosensors is also estimated. In the case of optimized intersecting waveguides, more than 67% transmittance of TE-mode light is simulated for the series connection of 20 intersecting waveguides. It is confirmed that it is possible to fabricate an 8 × 12 arrayed biosensor chip in an area of 1 × 1.5 mm2 taking the device size of the microvalves into consideration. We have, for the first time, designed a whole system, including sensors and a fluid channel with MEMS microvalves.

  3. Monolithic Mid-Infrared Integrated Photonics Using Silicon-on-Epitaxial Barium Titanate Thin Films.

    Science.gov (United States)

    Jin, Tiening; Li, Leigang; Zhang, Bruce; Lin, Hao-Yu Greg; Wang, Haiyan; Lin, Pao Tai

    2017-07-05

    Broadband mid-infrared (mid-IR) photonic circuits that integrate silicon waveguides and epitaxial barium titanate (BTO) thin films are demonstrated using the complementary metal-oxide-semiconductor process. The epitaxial BTO thin films are grown on lanthanum aluminate (LAO) substrates by the pulsed laser deposition technique, wherein a broad infrared transmittance between λ = 2.5 and 7 μm is observed. The optical waveguiding direction is defined by the high-refractive-index amorphous Si (a-Si) ridge structure developed on the BTO layer. Our waveguides show a sharp fundamental mode over the broad mid-IR spectrum, whereas its optical field distribution between the a-Si and BTO layers can be modified by varying the height of the a-Si ridge. With the advantages of broad mid-IR transparency and the intrinsic electro-optic properties, our monolithic Si on a ferroelectric BTO platform will enable tunable mid-IR microphotonics that are desired for high-speed optical logic gates and chip-scale biochemical sensors.

  4. Silicon nanocrystal-based photonic crystal slabs with broadband and efficient directional light emission.

    Science.gov (United States)

    Ondič, L; Varga, M; Pelant, I; Valenta, J; Kromka, A; Elliman, R G

    2017-07-18

    Light extraction from a thin planar layer can be increased by introducing a two-dimensional periodic pattern on its surface. This structure, the so-called photonic crystal (PhC) slab, then not only enhances the extraction efficiency of light but can direct the extracted emission into desired angles. Careful design of the structures is important in order to have a spectral overlap of the emission with extraction (leaky) modes. We show that by fabricating PhC slabs with optimized dimensions from silicon nanocrystals (SiNCs) active layers, the extraction efficiency of vertical light emission from SiNCs at a particular wavelength can be enhanced ∼ 11 times compared to that of uncorrugated SiNCs-rich layer. More importantly, increased light emission can be obtained in a broad spectral range and, simultaneously, the extracted light can stay confined within relatively narrow angle around the normal to the sample plane. We demonstrate experimentally and theoretically that the physical origin of the enhancement is such that light originating from SiNCs first couples to leaky modes of the PhCs and is then efficiently extracted into the surrounding.

  5. Photonics

    CERN Document Server

    Andrews, David L

    2015-01-01

    Discusses the basic physical principles underlying thescience and technology of nanophotonics, its materials andstructures This volume presents nanophotonic structures and Materials.Nanophotonics is photonic science and technology that utilizeslight/matter interactions on the nanoscale where researchers arediscovering new phenomena and developing techniques that go wellbeyond what is possible with conventional photonics andelectronics.The topics discussed in this volume are: CavityPhotonics; Cold Atoms and Bose-Einstein Condensates; Displays;E-paper; Graphene; Integrated Photonics; Liquid Cry

  6. Photonics

    CERN Document Server

    Andrews, David L

    2015-01-01

    Discusses the basic physical principles underlying Biomedical Photonics, spectroscopy and microscopy This volume discusses biomedical photonics, spectroscopy and microscopy, the basic physical principles underlying the technology and its applications. The topics discussed in this volume are: Biophotonics; Fluorescence and Phosphorescence; Medical Photonics; Microscopy; Nonlinear Optics; Ophthalmic Technology; Optical Tomography; Optofluidics; Photodynamic Therapy; Image Processing; Imaging Systems; Sensors; Single Molecule Detection; Futurology in Photonics. Comprehensive and accessible cov

  7. Photonics

    CERN Document Server

    Andrews, David L

    2015-01-01

    This book covers modern photonics accessibly and discusses the basic physical principles underlying all the applications and technology of photonicsThis volume covers the basic physical principles underlying the technology and all applications of photonics from statistical optics to quantum optics. The topics discussed in this volume are: Photons in perspective; Coherence and Statistical Optics; Complex Light and Singular Optics; Electrodynamics of Dielectric Media; Fast and slow Light; Holography; Multiphoton Processes; Optical Angular Momentum; Optical Forces, Trapping and Manipulation; Pol

  8. Photonics

    CERN Document Server

    Andrews, David L

    2015-01-01

    Discusses the basic physical principles underlying the technology instrumentation of photonics This volume discusses photonics technology and instrumentation. The topics discussed in this volume are: Communication Networks; Data Buffers; Defense and Security Applications; Detectors; Fiber Optics and Amplifiers; Green Photonics; Instrumentation and Metrology; Interferometers; Light-Harvesting Materials; Logic Devices; Optical Communications; Remote Sensing; Solar Energy; Solid-State Lighting; Wavelength Conversion Comprehensive and accessible coverage of the whole of modern photonics Emphas

  9. Photonic and plasmonic structures for enhancing efficiency of thin film silicon solar cells

    Science.gov (United States)

    Pattnaik, Sambit

    Crystalline silicon solar cells use high cost processing techniques as well as thick materials that are ˜ 200µm thick to convert solar energy into electricity. From a cost viewpoint, it is highly advantageous to use thin film solar cells which are generally made in the range of 0.1-3µm in thickness. Due to this low thickness, the quantity of material is greatly reduced and so is the number and complexity of steps involved to complete a device, thereby allowing a continuous processing capability improving the throughput and hence greatly decreasing the cost. This also leads to faster payback time for the end user of the photovoltaic panel. In addition, due to the low thickness and the possibility of deposition on flexible foils, the photovoltaic (PV) modules can be flexible. Such flexible PV modules are well suited for building-integrated applications and for portable, foldable, PV power products. For economical applications of solar cells, high efficiency is an important consideration. Since Si is an indirect bandgap material, a thin film of Si needs efficient light trapping to achieve high optical absorption. The previous work in this field has been mostly based on randomly textured back reflectors. In this work, we have used a novel approach, a periodic photonic and plasmonic structure, to optimize current density of the devices by absorbing longer wavelengths without hampering other properties. The two dimensional diffraction effect generated by a periodic structure with the plasmonic light concentration achieved by silver cones to efficiently propagate light in the plane at the back surface of a solar cell, achieves a significant increase in optical absorption. Using such structures, we achieved a 50%+ increase in short circuit current in a nano-crystalline (nc-Si) solar cell relative to stainless steel. In addition to nc-Si solar cells on stainless steel, we have also used the periodic photonic structure to enhance optical absorption in amorphous cells and

  10. Design and characterization of low-loss 2D grating couplers for silicon photonics integrated circuits

    Science.gov (United States)

    Lacava, C.; Carrol, L.; Bozzola, A.; Marchetti, R.; Minzioni, P.; Cristiani, I.; Fournier, M.; Bernabe, S.; Gerace, D.; Andreani, L. C.

    2016-03-01

    We present the characterization of Silicon-on-insulator (SOI) photonic-crystal based 2D grating-couplers (2D-GCs) fabricated by CEA-Leti in the frame of the FP7 Fabulous project, which is dedicated to the realization of devices and systems for low-cost and high-performance passives-optical-networks. On the analyzed samples different test structures are present, including 2D-GC connected to another 2D-GC by different waveguides (in a Mach-Zehnder like configuration), and 2D-GC connected to two separate 2D-GCs, so as to allow a complete assessment of different parameters. Measurements were carried out using a tunable laser source operating in the extended telecom bandwidth and a fiber-based polarization controlling system at the input of device-under-test. The measured data yielded an overall fiber-to-fiber loss of 7.5 dB for the structure composed by an input 2D-GC connected to two identical 2D-GCs. This value was obtained at the peak wavelength of the grating, and the 3-dB bandwidth of the 2D-GC was assessed to be 43 nm. Assuming that the waveguide losses are negligible, so as to make a worst-case analysis, the coupling efficiency of the single 2D-GC results to be equal to -3.75 dB, constituting, to the best of our knowledge, the lowest value ever reported for a fully CMOS compatible 2D-GC. It is worth noting that both the obtained values are in good agreement with those expected by the numerical simulations performed using full 3D analysis by Lumerical FDTD-solutions.

  11. Time-correlated single-photon counting study of multiple photoluminescence lifetime components of silicon nanoclusters

    Energy Technology Data Exchange (ETDEWEB)

    Diamare, D., E-mail: d.diamare@ee.ucl.ac.uk [Department of Electronic and Electrical Engineering, University College London, Torrington Place, London, WC1E 7JE (United Kingdom); Wojdak, M. [Department of Electronic and Electrical Engineering, University College London, Torrington Place, London, WC1E 7JE (United Kingdom); Lettieri, S. [Institute for Superconductors and Innovative Materials, National Council of Research (CNR-SPIN), Via Cintia 80126, Naples (Italy); Department of Physical Sciences, University of Naples “Federico II”, Via Cintia 80126, Naples (Italy); Kenyon, A.J. [Department of Electronic and Electrical Engineering, University College London, Torrington Place, London, WC1E 7JE (United Kingdom)

    2013-04-15

    We report time-resolved photoluminescence measurements of thin films of silica containing silicon nanoclusters (Si NCs), produced by PECVD and annealed at temperatures between 700 °C and 1150 °C. While the near infrared emission of Si NCs has long been studied, visible light emission has only recently attracted interest due to its very short decay times and its recently-reported redshift with decreasing NCs size. We analyse the PL decay dynamics in the range 450–700 nm with picosecond time resolution using Time Correlated Single Photon Counting. In the resultant multi-exponential decays two dominant components can clearly be distinguished: a very short component, in the range of hundreds of picoseconds, and a nanosecond component. In this wavelength range we do not detect the microsecond component generally associated with excitonic recombination. We associate the nanosecond component to defect relaxation: it decreases in intensity in the sample annealed at higher temperature, suggesting that the contribution from defects decreases with increasing temperature. The origin of the very fast PL component (ps time region) is also discussed. We show that it is consistent with the Auger recombination times of multiple excitons. Further work needs to be done in order to assess the contribution of the Auger-controlled recombinations to the defect-assisted mechanism of photoluminescence. -- Highlights: ► We report time-resolved PL measurements of Si-Ncs embedded in SiO{sub 2} matrix. ► Net decrease of PL with increasing the annealing temperature has been observed. ► Lifetime distribution analysis revealed a multiexponential decay with ns and ps components. ► Ps components are consistent with the lifetime range of the Auger recombination times. ► No evidence for a fast direct transition at the Brillouin zone centre.

  12. Coupled fiber taper extraction of 1.53 microm photoluminescence from erbium doped silicon nitride photonic crystal cavities.

    Science.gov (United States)

    Shambat, Gary; Gong, Yiyang; Lu, Jesse; Yerci, Selçuk; Li, Rui; Dal Negro, Luca; Vucković, Jelena

    2010-03-15

    Optical fiber tapers are used to collect photoluminescence emission at approximately 1.5 microm from photonic crystal cavities fabricated in erbium doped silicon nitride on silicon. In the experiment, photoluminescence collection via one arm of the fiber taper is enhanced 2.5 times relative to free space collection, corresponding to a net collection efficiency of 4%. Theoretically, the collection efficiency into one arm of the fiber-taper with this material system and cavity design can be as high as 12.5%, but the degradation of the experimental coupling efficiency relative to this value mainly comes from scattering loss within the short taper transition regions. By varying the fiber taper offset from the cavity, a broad tuning range of coupling strength and collection efficiency is obtained. This material system combined with fiber taper collection is promising for building on-chip optical amplifiers.

  13. Enhanced extraction of silicon-vacancy centers light emission using bottom-up engineered polycrystalline diamond photonic crystal slabs

    Czech Academy of Sciences Publication Activity Database

    Ondič, Lukáš; Varga, Marián; Hruška, Karel; Fait, J.; Kapusta, Peter

    2017-01-01

    Roč. 11, č. 3 (2017), s. 2972-2981 ISSN 1936-0851 R&D Projects: GA ČR GJ16-09692Y; GA MŠk LD15003; GA ČR(CZ) GBP208/12/G016 Institutional support: RVO:68378271 ; RVO:61388955 Keywords : photonic crystal * diamond * silicon vacancy center Subject RIV: BM - Solid Matter Physics ; Magnetism; CF - Physical ; Theoretical Chemistry (UFCH-W) OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.); Physical chemistry (UFCH-W) Impact factor: 13.942, year: 2016

  14. Silicon photonics non-resonant wavelength filters: comparison between AWGs, echelle gratings, and cascaded Mach-Zehnder filters

    Science.gov (United States)

    Bogaerts, Wim; Pathak, Shibnath; Ruocco, Alfonso; Dwivedi, Sarvagya

    2015-02-01

    We present a comparison of different silicon photonics-based wavelength filters for different design criteria (e.g. channel spacing, number of channels, ...) and different performance metrics (e.g. insertion loss or crosstalk ). In this paper we compare only non-resonant filters, or finite-impulse response (FIR) filters, such as Arrayed Waveguide Gratings, Echelle Gratings and higher-order cascades of Mach-Zehnder filters. We derive the strengths and weaknesses from their operational principles and confirm those with experimental data from fabricated devices and extrapolated simulations.

  15. Performance of hybrid photon detector prototypes with encapsulated silicon pixel detector and readout for the RICH counters of LHCb

    International Nuclear Information System (INIS)

    Campbell, M.; George, K.A.; Girone, M.; Gys, T.; Jolly, S.; Piedigrossi, D.; Riedler, P.; Rozema, P.; Snoeys, W.; Wyllie, K.

    2003-01-01

    These proceedings report on the performance of the latest prototype pixel hybrid photon detector in preparation for the LHCb Ring Imaging Cherenkov detectors. The prototype encapsulates a silicon pixel detector bump-bonded to a binary read-out chip with short (25 ns) peaking time and low ( - ) detection threshold. A brief description of the prototype is given, followed by the preliminary results of the characterisation of the prototype behaviour when tested using a low intensity pulsed light emitting diode. The results obtained are in good agreement with those obtained using previous prototypes. The proceedings conclude with a summary of the current status and future plans

  16. Performance analysis of communication links based on VCSEL and silicon photonics technology for high-capacity data-intensive scenario.

    Science.gov (United States)

    Boletti, A; Boffi, P; Martelli, P; Ferrario, M; Martinelli, M

    2015-01-26

    To face the increased demand for bandwidth, cost-effectiveness and simplicity of future Ethernet data communications, a comparison between two different solutions based on directly-modulated VCSEL sources and Silicon Photonics technologies is carried out. Also by exploiting 4-PAM modulation, the transmission of 50-Gb/s and beyond capacity per channel is analyzed by means of BER performance. Applications for optical backplane, very short reach and in case of client-optics networks and intra and inter massive data centers communications (up to 10 km) are taken into account. A comparative analysis based on the power consumption is also proposed.

  17. Silicon Photonics for Signal Processing of Tbit/s Serial Data Signals

    DEFF Research Database (Denmark)

    Oxenløwe, Leif Katsuo; Ji, Hua; Galili, Michael

    2012-01-01

    In this paper, we describe our recent work on signal processing of terabit per second optical serial data signals using pure silicon waveguides. We employ nonlinear optical signal processing in nanoengineered silicon waveguides to perform demultiplexing and optical waveform sampling of 1.28-Tbit....../s data signals as well as wavelength conversion of up to 320-Gbit/s data signals. We demonstrate that the silicon waveguides are equally useful for amplitude and phase-modulated data signals....

  18. Monolithic silicon photonics in a sub-100nm SOI CMOS microprocessor foundry: progress from devices to systems

    Science.gov (United States)

    Popović, Miloš A.; Wade, Mark T.; Orcutt, Jason S.; Shainline, Jeffrey M.; Sun, Chen; Georgas, Michael; Moss, Benjamin; Kumar, Rajesh; Alloatti, Luca; Pavanello, Fabio; Chen, Yu-Hsin; Nammari, Kareem; Notaros, Jelena; Atabaki, Amir; Leu, Jonathan; Stojanović, Vladimir; Ram, Rajeev J.

    2015-02-01

    We review recent progress of an effort led by the Stojanović (UC Berkeley), Ram (MIT) and Popović (CU Boulder) research groups to enable the design of photonic devices, and complete on-chip electro-optic systems and interfaces, directly in standard microelectronics CMOS processes in a microprocessor foundry, with no in-foundry process modifications. This approach allows tight and large-scale monolithic integration of silicon photonics with state-of-the-art (sub-100nm-node) microelectronics, here a 45nm SOI CMOS process. It enables natural scale-up to manufacturing, and rapid advances in device design due to process repeatability. The initial driver application was addressing the processor-to-memory communication energy bottleneck. Device results include 5Gbps modulators based on an interleaved junction that take advantage of the high resolution of the sub-100nm CMOS process. We demonstrate operation at 5fJ/bit with 1.5dB insertion loss and 8dB extinction ratio. We also demonstrate the first infrared detectors in a zero-change CMOS process, using absorption in transistor source/drain SiGe stressors. Subsystems described include the first monolithically integrated electronic-photonic transmitter on chip (modulator+driver) with 20-70fJ/bit wall plug energy/bit (2-3.5Gbps), to our knowledge the lowest transmitter energy demonstrated to date. We also demonstrate native-process infrared receivers at 220fJ/bit (5Gbps). These are encouraging signs for the prospects of monolithic electronics-photonics integration. Beyond processor-to-memory interconnects, our approach to photonics as a "More-than- Moore" technology inside advanced CMOS promises to enable VLSI electronic-photonic chip platforms tailored to a vast array of emerging applications, from optical and acoustic sensing, high-speed signal processing, RF and optical metrology and clocks, through to analog computation and quantum technology.

  19. Robust integration schemes for junction-based modulators in a 200mm CMOS compatible silicon photonic platform (Conference Presentation)

    Science.gov (United States)

    Szelag, Bertrand; Abraham, Alexis; Brision, Stéphane; Gindre, Paul; Blampey, Benjamin; Myko, André; Olivier, Segolene; Kopp, Christophe

    2017-05-01

    Silicon photonic is becoming a reality for next generation communication system addressing the increasing needs of HPC (High Performance Computing) systems and datacenters. CMOS compatible photonic platforms are developed in many foundries integrating passive and active devices. The use of existing and qualified microelectronics process guarantees cost efficient and mature photonic technologies. Meanwhile, photonic devices have their own fabrication constraints, not similar to those of cmos devices, which can affect their performances. In this paper, we are addressing the integration of PN junction Mach Zehnder modulator in a 200mm CMOS compatible photonic platform. Implantation based device characteristics are impacted by many process variations among which screening layer thickness, dopant diffusion, implantation mask overlay. CMOS devices are generally quite robust with respect to these processes thanks to dedicated design rules. For photonic devices, the situation is different since, most of the time, doped areas must be carefully located within waveguides and CMOS solutions like self-alignment to the gate cannot be applied. In this work, we present different robust integration solutions for junction-based modulators. A simulation setup has been built in order to optimize of the process conditions. It consist in a Mathlab interface coupling process and device electro-optic simulators in order to run many iterations. Illustrations of modulator characteristic variations with process parameters are done using this simulation setup. Parameters under study are, for instance, X and Y direction lithography shifts, screening oxide and slab thicknesses. A robust process and design approach leading to a pn junction Mach Zehnder modulator insensitive to lithography misalignment is then proposed. Simulation results are compared with experimental datas. Indeed, various modulators have been fabricated with different process conditions and integration schemes. Extensive

  20. SU-E-J-91: Novel Epitaxial Silicon Array for Quality Assurance in Photon and Proton Therapy

    International Nuclear Information System (INIS)

    Talamonti, C; Zani, M; Scaringella, M; Bruzzi, M; Bucciolini, M; Menichelli, D; Friedl, F

    2014-01-01

    Purpose: to demonstrate suitability of a novel silicon array for measuring the dose properties of highly conformal photon and proton beams. Methods: prototype under test is a 24cm long linear array prototype, although the underlying technology is suitable to construct 2D arrays as well. It is based on a 64pixels monolithic sensor with 1mm pixel pitch, made of epitaxial ptype silicon. Thanks to design modularity, more sensors can be placed side by side without breaking pixel pitch. Flattened and unflattened photon beams, as well as proton radiation from a cyclotron in pencil beam scanning mode, were considered. Measurements of beam characteristics as percentage depth doses, dose profiles, output factors and energy response, which are necessary to deliver radiation with high precision and reliability, were performed. Results: Dose rate independence with photons was verified in the dose per pulse range 0.03 to 2mGy. Results clearly indicate nondependence of the detector sensitivity both for flattened and unflattened beams, with a variation of at most 0.5percentage. OFs were obtained for field with a lateral size ranging from 0.8cm to 16cm and the results are in good agreement with ion chamber A1SL, max difference less than 1.5percentage. Field sizes and beam penumbra were measured and compared to EBT film results. Concerning proton beams, sensitivity independence on dose rate was verified by changing the beam current in the interval 2-130Gy/s. Field sizes and beam penumbra measurements are in agreement with data taken with a scintillating 2D array with 0.5mm resolution IBA Lynx, and a better penumbra definition than an array of ionization chambers IBA MatriXX is reached. Conclusion: The device is a novel and valuable tool for QA both for photon and proton dose delivery. All measurements demonstrated its capability to measure with high spatial resolution many crucial properties of the RT beam

  1. SU-E-J-91: Novel Epitaxial Silicon Array for Quality Assurance in Photon and Proton Therapy

    Energy Technology Data Exchange (ETDEWEB)

    Talamonti, C; Zani, M; Scaringella, M; Bruzzi, M; Bucciolini, M [University of Florence, Firenze (Italy); Menichelli, D; Friedl, F [IBA Dosimetry, Schwarzenbruck, Bavaria (Germany)

    2014-06-01

    Purpose: to demonstrate suitability of a novel silicon array for measuring the dose properties of highly conformal photon and proton beams. Methods: prototype under test is a 24cm long linear array prototype, although the underlying technology is suitable to construct 2D arrays as well. It is based on a 64pixels monolithic sensor with 1mm pixel pitch, made of epitaxial ptype silicon. Thanks to design modularity, more sensors can be placed side by side without breaking pixel pitch. Flattened and unflattened photon beams, as well as proton radiation from a cyclotron in pencil beam scanning mode, were considered. Measurements of beam characteristics as percentage depth doses, dose profiles, output factors and energy response, which are necessary to deliver radiation with high precision and reliability, were performed. Results: Dose rate independence with photons was verified in the dose per pulse range 0.03 to 2mGy. Results clearly indicate nondependence of the detector sensitivity both for flattened and unflattened beams, with a variation of at most 0.5percentage. OFs were obtained for field with a lateral size ranging from 0.8cm to 16cm and the results are in good agreement with ion chamber A1SL, max difference less than 1.5percentage. Field sizes and beam penumbra were measured and compared to EBT film results. Concerning proton beams, sensitivity independence on dose rate was verified by changing the beam current in the interval 2-130Gy/s. Field sizes and beam penumbra measurements are in agreement with data taken with a scintillating 2D array with 0.5mm resolution IBA Lynx, and a better penumbra definition than an array of ionization chambers IBA MatriXX is reached. Conclusion: The device is a novel and valuable tool for QA both for photon and proton dose delivery. All measurements demonstrated its capability to measure with high spatial resolution many crucial properties of the RT beam.

  2. Toward the Physical Basis of Complex Systems: Dielectric Analysis of Porous Silicon Nanochannels in the Electrical Double Layer Length Range

    Directory of Open Access Journals (Sweden)

    Radu Mircea Ciuceanu

    2011-01-01

    Full Text Available Dielectric analysis (DEA shows changes in the properties of
    a materials as a response to the application on it of a time dependent electric field. Dielectric measurements are extremely sensitive to small changes in materials properties, that molecular relaxation, dipole changes, local motions that involve the reorientation of dipoles, and so can be observed by DEA. Electrical double layer (EDL, consists in a shielding layer that is naturally created within the liquid near a charged surface. The thickness of the EDL is given by the characteristic Debye length what grows less with the ionic strength defined by half summ products of concentration with square of charge for all solvent
    ions (co-ions, counterions, charged molecules. The typical length scale for the Debye length is on the order of 1 nm, depending on the ionic contents in the solvent; thus, the EDL becomes significant for nano-capillaries that nanochannels. The electrokinetic e®ects in the nanochannels depend essentialy on the distribution of charged species in EDL, described by the Poisson-Boltzmann equation those solutions require the solvent dielectric permittivity. In this work we propose a model for solvent low-frequency permittivity and a DEA profile taking into account both the porous silicon electrode and aqueous solvent properties in the Debye length range.

  3. Displacement damage analysis and modified electrical equivalent circuit for electron and photon-irradiated silicon solar cells

    Science.gov (United States)

    Arjhangmehr, Afshin; Feghhi, Seyed Amir Hossein

    2014-10-01

    Solar modules and arrays are the conventional energy resources of space satellites. Outside the earth's atmosphere, solar panels experience abnormal radiation environments and because of incident particles, photovoltaic (PV) parameters degrade. This article tries to analyze the electrical performance of electron and photon-irradiated mono-crystalline silicon (mono-Si) solar cells. PV cells are irradiated by mono-energetic electrons and poly-energetic photons and immediately characterized after the irradiation. The mean degradation of the maximum power (Pmax) of silicon solar cells is presented and correlated using the displacement damage dose (Dd) methodology. This method simplifies evaluation of cell performance in space radiation environments and produces a single characteristic curve for Pmax degradation. Furthermore, complete analysis of the results revealed that the open-circuit voltage (Voc) and the filling factor of mono-Si cells did not significantly change during the irradiation and were independent of the radiation type and fluence. Moreover, a new technique is developed that adapts the irradiation-induced effects in a single-cell equivalent electrical circuit and adjusts its elements. The "modified circuit" is capable of modeling the "radiation damage" in the electrical behavior of mono-Si solar cells and simplifies the designing of the compensation circuits.

  4. Development of a silicon microstrip detector with single photon sensitivity for fast dynamic diffraction experiments at a synchrotron radiation beam

    Science.gov (United States)

    Arakcheev, A.; Aulchenko, V.; Kudashkin, D.; Shekhtman, L.; Tolochko, B.; Zhulanov, V.

    2017-06-01

    Time-resolved experiments on the diffraction of synchrotron radiation (SR) from crystalline materials provide information on the evolution of a material structure after a heat, electron beam or plasma interaction with a sample under study. Changes in the material structure happen within a microsecond scale and a detector with corresponding parameters is needed. The SR channel 8 of the VEPP-4M storage ring provides radiation from the 7-pole wiggler that allows to reach several tens photons within one μs from a tungsten crystal for the most intensive diffraction peak. In order to perform experiments that allow to measure the evolution of tungsten crystalline structure under the impact of powerful laser beam, a new detector is developed, that can provide information about the distribution of a scattered SR flux in space and its evolution in time at a microsecond scale. The detector is based on the silicon p-in-n microstrip sensor with DC-coupled metal strips. The sensor contains 1024 30 mm long strips with a 50 μm pitch. 64 strips are bonded to the front-end electronics based on APC128 ASICs. The APC128 ASIC contains 128 channels that consist of a low noise integrator with 32 analogue memory cells each. The integrator equivalent noise charge is about 2000 electrons and thus the signal from individual photons with energy above 40 keV can be observed. The signal can be stored at the analogue memory with 10 MHz rate. The first measurements with the beam scattered from a tungsten crystal with energy near 60 keV demonstrated the capability of this prototype to observe the spatial distribution of the photon flux with the intensity from below one photon per channel up to 0~10 photons per channel with a frame rate from 10 kHz up to 1 MHz.

  5. mm-Wave Wireless Communications based on Silicon Photonics Integrated Circuits

    DEFF Research Database (Denmark)

    Rommel, Simon; Heck, Martijn; Vegas Olmos, Juan José

    Hybrid photonic-wireless transmission schemes in the mm-wave frequency range are promising candidates to enable the multi-gigabit per second data communications required from wireless and mobile networks of the 5th and future generations. Photonic integration may pave the way to practical...

  6. Silicon Photonics Integrated Circuits for 5th Generation mm-Wave Wireless Communications

    DEFF Research Database (Denmark)

    Rommel, Simon; Vegas Olmos, Juan José; Tafur Monroy, Idelfonso

    Hybrid photonic-wireless transmission schemes in the mm-wave frequency are promising candidates to enable the multi-gigabit per second data communications required from wireless and mobile networks of the 5th and future generations. Photonic integration may pave the way to practical applicability...

  7. Influence of short coherence length on the superconducting proximity effect of silicon-coupled junctions

    Science.gov (United States)

    Hatano, M.; Nishino, T.; Murai, F.; Kawabe, U.

    1988-08-01

    NbN-Si-NbN and Nb-Si-Nb junctions with coplanar structure were fabricated using electron beam lithography. The critical superconducting current of the NbN-SI-NbN junction decreased exponentially with increasing temperature above 4.2 K. The current also decayed exponentially with increasing spacing between superconducting electrodes for both Nb and NbN junctions. It was found that the coherence length in the semiconductor is determined only by the physical properties of the semiconductor, and it is independent of the condition at the superconductor-semiconductor interface and of the superconducting electrode material with a short coherence length. The coherence length in the semiconductor obtained from the experimental results agreed with the calculated value derived from the model of Seto and Van Duzer (1972).

  8. Wannier–Stark electro-optical effect, quasi-guided and photonic modes in 2D macroporous silicon structures with SiO{sub 2} coatings

    Energy Technology Data Exchange (ETDEWEB)

    Karachevtseva, L., E-mail: lakar@isp.kiev.ua [Ningbo University of Technology, No. 55-155 Cui Bai Road, Ningbo 315016 (China); V. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine, 41 Nauky Pr., 03028 Kyiv (Ukraine); Goltviansky, Yu., E-mail: ecoflam@voliacable.com [V. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine, 41 Nauky Pr., 03028 Kyiv (Ukraine); Sapelnikova, O., E-mail: e_kolesnik84@mail.ru [V. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine, 41 Nauky Pr., 03028 Kyiv (Ukraine); Lytvynenko, O., E-mail: lytvole@gmail.com [V. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine, 41 Nauky Pr., 03028 Kyiv (Ukraine); Stronska, O., E-mail: yaschichek@ukr.net [V. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine, 41 Nauky Pr., 03028 Kyiv (Ukraine); Bo, Wang, E-mail: bo305@hotmail.com [Ningbo University of Technology, No. 55-155 Cui Bai Road, Ningbo 315016 (China); Kartel, M., E-mail: nikar@kartel.kiev.ua [Ningbo University of Technology, No. 55-155 Cui Bai Road, Ningbo 315016 (China)

    2016-12-01

    Highlights: • The IR absorption spectra of oxidized macroporous silicon were studied. • The Wannier–Stark electro-optical effect on Si-SiO{sub 2} boundary was confirmed. • An additional electric field of quasi-guided optical modes was evaluated. • The photonic modes and band gaps were measured as peculiarities in absorption spectra. - Abstract: Opportunities to enhance the properties of structured surfaces were demonstrated on 2D macroporous silicon structures with SiO{sub 2} coatings. We investigated the IR light absorption oscillations in macroporous silicon structures with SiO2 coatings 0–800 nm thick. The Wannier–Stark electro-optical effect due to strong electric field on Si-SiO{sub 2}boundary and an additional electric field of quasi-guided optical modes were taken into account. The photonic modes and band gaps were also considered as peculiarities in absorbance spectra of macroporous silicon structures with a thick SiO{sub 2} coating. The photonic modes do not coincide with the quasi-guided modes in the silicon matrix and do not appear in absorption spectra of 2D macroporous silicon structures with surface nanocrystals.

  9. Characterization of a silicon strip detector for photon-counting spectral CT using monoenergetic photons from 40 keV to 120 keV

    Science.gov (United States)

    Liu, Xuejin; Bornefalk, Hans; Chen, Han; Danielsson, Mats; Karlsson, Staffan; Persson, Mats; Xu, Cheng; Huber, Ben

    2014-03-01

    Background: We are developing a segmented silicon strip detector that operates in photon-counting mode and allows pulse-height discrimination with 8 adjustable energy bins. In this work, we determine the energy resolution of the detector using monoenergetic x-ray radiation from 40 keV to 120 keV. We further investigate the effects of pulse pileup and charge sharing between detector channels that may lead to a decreased energy resolution. Methods: For each incident monochromatic x-ray energy, we obtain count spectra at different photon fluxes. These spectra corresponds to the pulse-height response of the detector and allow the determination of energy resolution and charge-sharing probability. The energy resolution, however, is influenced by signal pileup and charge sharing. Both effects are quantified using Monte Carlo simulations of the detector that aim to reproduce the conditions during the measurements. Results: The absolute energy resolution is found to increase from 1.7 to 2.1 keV for increasing energies 40 keV to 120 keV at the lowest measured photon flux. The effect of charge sharing is found to increase the absolute energy resolution by a factor of 1.025 at maximum. This increase is considered as negligibly small. The pileup of pulses leads to a deterioration rate of the energy resolution of 4 · 10-3 keV Mcps-1 mm2, corresponding to an increase of 0.04keV per 10 Mcps increase of the detected count rate.

  10. Integrated GaN photonic circuits on silicon (100) for second harmonic generation

    OpenAIRE

    Xiong, Chi; Pernice, Wolfram; Ryu, Kevin K.; Schuck, Carsten; Fong, King Y.; Palacios, Tomas; Tang, Hong X.

    2014-01-01

    We demonstrate second order optical nonlinearity in a silicon architecture through heterogeneous integration of single-crystalline gallium nitride (GaN) on silicon (100) substrates. By engineering GaN microrings for dual resonance around 1560 nm and 780 nm, we achieve efficient, tunable second harmonic generation at 780 nm. The \\{chi}(2) nonlinear susceptibility is measured to be as high as 16 plus minus 7 pm/V. Because GaN has a wideband transparency window covering ultraviolet, visible and ...

  11. Enhanced Extraction of Silicon-Vacancy Centers Light Emission Using Bottom-Up Engineered Polycrystalline Diamond Photonic Crystal Slabs.

    Science.gov (United States)

    Ondič, Lukáš; Varga, Marian; Hruška, Karel; Fait, Jan; Kapusta, Peter

    2017-03-28

    Silicon vacancy (SiV) centers are optically active defects in diamond. The SiV centers, in contrast to nitrogen vacancy (NV) centers, possess narrow and efficient luminescence spectrum (centered at ≈738 nm) even at room temperature, which can be utilized for quantum photonics and sensing applications. However, most of light generated in diamond is trapped in the material due to the phenomenon of total internal reflection. In order to overcome this issue, we have prepared two-dimensional photonic crystal slabs from polycrystalline diamond thin layers with high density of SiV centers employing bottom-up growth on quartz templates. We have shown that the spectral overlap between the narrow light emission of the SiV centers and the leaky modes extracting the emission into almost vertical direction (where it can be easily detected) can be obtained by controlling the deposition time. More than 14-fold extraction enhancement of the SiV centers photoluminescence was achieved compared to an uncorrugated sample. Computer simulation confirmed that the extraction enhancement originates from the efficient light-matter interaction between light emitted from the SiV centers and the photonic crystal slab.

  12. Potential of Glassy Carbon and Silicon Carbide Photonic Structures as Electromagnetic Radiation Shields for Atmospheric Re-entry

    Science.gov (United States)

    Komarevskiy,Nikolay; Shklover, Valery; Braginsky, Leonid; Hafner, Christian; Lawson, John W.

    2012-01-01

    During high-velocity atmospheric entries, space vehicles can be exposed to strong electromagnetic radiation from ionized gas in the shock layer. Glassy carbon (GC) and silicon carbide (SiC) are candidate thermal protection materials due to their high melting point and also their good thermal and mechanical properties. Based on data from shock tube experiments, a significant fraction of radiation at hypersonic entry conditions is in the frequency range from 215 to 415 THz. We propose and analyze SiC and GC photonic structures to increase the reflection of radiation in that range. For this purpose, we performed numerical optimizations of various structures using an evolutionary strategy. Among the considered structures are layered, porous, woodpile, inverse opal and guided-mode resonance structures. In order to estimate the impact of fabrication inaccuracies, the sensitivity of the reflectivity to structural imperfections is analyzed. We estimate that the reflectivity of GC photonic structures is limited to 38% in the aforementioned range, due to material absorption. However, GC material can be effective for photonic reflection of individual, strong spectral line. SiC on the other hand can be used to design a good reflector for the entire frequency range.

  13. Diffusion length measurement using the scanning electron microscope. [for silicon solar cell

    Science.gov (United States)

    Weizer, V. G.

    1975-01-01

    The present work describes a measuring technique employing the scanning electron microscope in which values of the true bulk diffusion length are obtained. It is shown that surface recombination effects can be eliminated through application of highly doped surface field layers. The effects of high injection level and low-high junction current generation are investigated. Results obtained with this technique are compared to those obtained by a penetrating radiation (X-ray) method, and a close agreement is found. The SEM technique is limited to cells that contain a back surface field layer.

  14. All-optically tunable waveform synthesis by a silicon nanowaveguide ring resonator coupled with a photonic-crystal fiber frequency shifter

    KAUST Repository

    Savvin, Aleksandr D.

    2011-03-01

    A silicon nanowaveguide ring resonator is combined with a photonic-crystal fiber (PCF) frequency shifter to demonstrate an all-optically tunable synthesis of ultrashort pulse trains, modulated by ultrafast photoinduced free-carrier generation in the silicon resonator. Pump-probe measurements performed with a 50-fs, 625-nm second-harmonic output of a Cr:forsterite laser, used as a carrier-injecting pump, and a 1.50-1.56-μm frequency-tunable 100-fs soliton output of a photonic-crystal fiber, serving as a probe, resolve tunable ultrafast oscillatory features in the silicon nanowaveguide resonator response. © 2010 Elsevier B.V. All rights reserved.

  15. Analysis of an electro-optic modulator based on a graphene-silicon hybrid 1D photonic crystal nanobeam cavity.

    Science.gov (United States)

    Pan, Ting; Qiu, Ciyuan; Wu, Jiayang; Jiang, Xinhong; Liu, Boyu; Yang, Yuxing; Zhou, Huanying; Soref, Richard; Su, Yikai

    2015-09-07

    We propose and numerically study an on-chip graphene-silicon hybrid electro-optic (EO) modulator operating at the telecommunication band, which is implemented by a compact 1D photonic crystal nanobeam (PCN) cavity coupled to a bus waveguide with a graphene sheet on top. Through electrically tuning the Fermi level of the graphene, both the quality factor and the resonance wavelength can be significantly changed, thus the in-plane lightwave can be efficiently modulated. Based on finite-difference time-domain (FDTD) simulation results, the proposed modulator can provide a large free spectral range (FSR) of 125.6 nm, a high modulation speed of 133 GHz, and a large modulation depth of ~12.5 dB in a small modal volume, promising a high performance EO modulator for wavelength-division multiplexed (WDM) optical communication systems.

  16. Silicon photomultiplier arrays - a novel photon detector for a high resolution tracker produced at FBK-irst, Italy

    International Nuclear Information System (INIS)

    Greim, R.; Gast, H.; Kirn, T.; Olzem, J.; Yearwood, G. Roper; Schael, S.; Zimmermann, N.; Ambrosi, G.; Azzarello, P.; Battiston, R.; Piemonte, C.

    2009-01-01

    A silicon photomultiplier (SiPM) array has been developed at FBK-irst [Piemonte C., Nucl. Instrum. Methods A, 568 (2006) 224; Piemonte C. et al., IEEE Trans. Nucl. Sci., 54 (2007) 236] having 32 channels and a dimension of 8.0x1.1mm 2 . Each 250 μm wide channel is subdivided into 5x22 rectangularly arranged pixels. These sensors are developed to read out a modular high resolution scintillating fiber tracker. Key properties like breakdown voltage, gain and photon detection efficiency (PDE) are found to be homogeneous over all 32 channels of an SiPM array. This could make scintillating fiber trackers with SiPM array readout a promising alternative to available tracker technologies, if noise properties and the PDE are improved.

  17. Silicon photomultiplier arrays - a novel photon detector for a high resolution tracker produced at FBK-irst, Italy

    Energy Technology Data Exchange (ETDEWEB)

    Greim, R.; Gast, H.; Kirn, T.; Olzem, J.; Yearwood, G. Roper; Schael, S.; Zimmermann, N. [I. Physikalisches Institut B, RWTH Aachen University, 52074 Aachen (Germany); Ambrosi, G.; Azzarello, P. [Dipartimento di Fisica, Universita di Perugia, 06123 Perugia (Italy); Battiston, R. [Dipartimento di Fisica, Universita di Perugia, 06123 Perugia (Italy); Istituto Nazionale di Fisica Nucleare, Sezione di Perugia, 06123 Perugia (Italy); Piemonte, C. [Fondazione Bruno Kessler - Istituto per la Ricerca Scientifica e tecnologica, 38050 Trento (Italy)

    2009-12-15

    A silicon photomultiplier (SiPM) array has been developed at FBK-irst [Piemonte C., Nucl. Instrum. Methods A, 568 (2006) 224; Piemonte C. et al., IEEE Trans. Nucl. Sci., 54 (2007) 236] having 32 channels and a dimension of 8.0x1.1mm{sup 2}. Each 250 mum wide channel is subdivided into 5x22 rectangularly arranged pixels. These sensors are developed to read out a modular high resolution scintillating fiber tracker. Key properties like breakdown voltage, gain and photon detection efficiency (PDE) are found to be homogeneous over all 32 channels of an SiPM array. This could make scintillating fiber trackers with SiPM array readout a promising alternative to available tracker technologies, if noise properties and the PDE are improved.

  18. Silicon-on-insulator narrow-passband filter based on cascaded MZIs incorporating enhanced FSR for downconverting analog photonic links.

    Science.gov (United States)

    Yu, Hongchen; Chen, Minghua; Li, Pengxiao; Yang, Sigang; Chen, Hongwei; Xie, Shizhong

    2013-03-25

    A silicon-on-insulator (SOI) narrow-passband filter based on cascaded Mach-Zehnder interferometers (MZIs) is theoretically simulated and experimentally demonstrated, indicating that the free spectral range (FSR) of the proposed filter can be significantly enlarged by increasing the number of the MZI stages. A filter using three-stage cascaded MZIs structure is successfully realized in the experiment and a 3-dB bandwidth of about 1.536 GHz and FSR about 13.5 GHz have been achieved. The performance of a downconverting analog photonic link (APL) employing the designed filter for microwave signal processing is also measured and a spurious free dynamic range (SFDR) as high as 104.1dB-Hz(2/3) is observed.

  19. Optimization of PAM-4 transmitters based on lumped silicon photonic MZMs for high-speed short-reach optical links.

    Science.gov (United States)

    Zhou, Shiyu; Wu, Hsin-Ta; Sadeghipour, Khosrov; Scarcella, Carmelo; Eason, Cormac; Rensing, Marc; Power, Mark J; Antony, Cleitus; O'Brien, Peter; Townsend, Paul D; Ossieur, Peter

    2017-02-20

    We demonstrate how to optimize the performance of PAM-4 transmitters based on lumped Silicon Photonic Mach-Zehnder Modulators (MZMs) for short-reach optical links. Firstly, we analyze the trade-off that occurs between extinction ratio and modulation loss when driving an MZM with a voltage swing less than the MZM's Vπ. This is important when driver circuits are realized in deep submicron CMOS process nodes. Next, a driving scheme based upon a switched capacitor approach is proposed to maximize the achievable bandwidth of the combined lumped MZM and CMOS driver chip. This scheme allows the use of lumped MZM for high speed optical links with reduced RF driver power consumption compared to the conventional approach of driving MZMs (with transmission line based electrodes) with a power amplifier. This is critical for upcoming short-reach link standards such as 400Gb/s 802.3 Ethernet. The driver chip was fabricated using a 65nm CMOS technology and flip-chipped on top of the Silicon Photonic chip (fabricated using IMEC's ISIPP25G technology) that contains the MZM. Open eyes with 4dB extinction ratio for a 36Gb/s (18Gbaud) PAM-4 signal are experimentally demonstrated. The electronic driver chip has a core area of only 0.11mm2 and consumes 236mW from 1.2V and 2.4V supply voltages. This corresponds to an energy efficiency of 6.55pJ/bit including Gray encoder and retiming, or 5.37pJ/bit for the driver circuit only.

  20. Selectively Transparent and Conducting Photonic Crystals and their Potential to Enhance the Performance of Thin-Film Silicon-Based Photovoltaics and Other Optoelectronic Devices

    Science.gov (United States)

    O'Brien, Paul G.

    2011-12-01

    The byproducts of human engineered energy production are increasing atmospheric CO2 concentrations well above their natural levels and accompanied continual decline in the natural reserves of fossil fuels necessitates the development of green energy alternatives. Solar energy is attractive because it is abundant, can be produced in remote locations and consumed on site. Specifically, thin-film silicon-based photovoltaic (PV) solar cells have numerous inherent advantages including their availability, non-toxicity, and they are relatively inexpensive. However, their low-cost and electrical performance depends on reducing their thickness to as great an extent as possible. This is problematic because their thickness is much less than their absorption length. Consequently, enhanced light trapping schemes must be incorporated into these devices. Herein, a transparent and conducting photonic crystal (PC) intermediate reflector (IR), integrated into the rear side of the cell and serving the dual function as a back-reflector and a spectral splitter, is identified as a promising method of boosting the performance of thin-film silicon-based PV. To this end a novel class of PCs, namely selectively transparent and conducting photonic crystals (STCPC), is invented. These STCPCs are a significant advance over existing 1D PCs because they combine intense wavelength selective broadband reflectance with the transmissive and conductive properties of sputtered ITO. For example, STCPCs are made to exhibit Bragg-reflectance peaks in the visible spectrum of 95% reflectivity and have a full width at half maximum that is greater than 200nm. At the same time, the average transmittance of these STCPCs is greater than 80% over the visible spectrum that is outside their stop-gap. Using wave-optics analysis, it is shown that STCPC intermediate reflectors increase the current generated in micromorph cells by 18%. In comparison, the more conventional IR comprised of a single homogeneous

  1. Characterization of Ge Nano structures Embedded Inside Porous Silicon for Photonics Application

    International Nuclear Information System (INIS)

    Rahim, A.F.A.; Hashim, M.R.; Rahim, A.F.A.; Ali, N.K.

    2011-01-01

    In this work we prepared germanium nano structures by means of filling the material inside porous silicon (PS) using conventional and cost effective technique, thermal evaporator. The PS acts as patterned substrate. It was prepared by anodization of silicon wafer in ethanoic hydrofluoric acid (HF). A Ge layer was then deposited onto the PS by thermal evaporation. This was followed by deposition of Si layer by thermal evaporation and anneal at 650 degree Celsius for 30 min. The process was completed by Ni metal deposition using thermal evaporator followed by metal annealing of 400 degree Celsius for 10 min to form metal semiconductor metal (MSM) photodetector. Structural analysis of the samples was performed using energy dispersive x-ray analysis (EDX), scanning electron microscope (SEM), X-ray diffraction (XRD) and Raman spectroscopy (RS). EDX spectrum suggests the presence of Ge inside the pores structure. Raman spectrum showed that good crystalline structure of Ge can be produced inside silicon pores with a phase with the diamond structure by (111), (220) and (400) reflections. Finally current-voltage (I-V) measurement of the MSM photodetector was carried out and showed lower dark currents compared to that of Si control device. Interestingly the device showed enhanced current gain compared to Si device which can be associated with the presence of Ge nano structures in the porous silicon. (author)

  2. Photonic Torque Microscopy of the Nonconservative Force Field for Optically Trapped Silicon Nanowires

    Czech Academy of Sciences Publication Activity Database

    Irrera, A.; Maggazu, A.; Artoni, P.; Simpson, Stephen Hugh; Hanna, S.; Jones, P.H.; Priolo, F.; Gucciardi, P. G.; Marago, O.M.

    2016-01-01

    Roč. 16, č. 7 (2016), s. 4181-4188 ISSN 1530-6984 R&D Projects: GA ČR GB14-36681G Institutional support: RVO:68081731 Keywords : optical tweezers * silicon nanowires * nonequilibrium dynamics * Brownian motion Subject RIV: BH - Optics, Masers, Lasers Impact factor: 12.712, year: 2016

  3. Electron and photon degradation in aluminum, gallium and boron doped float zone silicon solar cells

    Science.gov (United States)

    Rahilly, W. P.; Scott-Monck, J.; Anspaugh, B.; Locker, D.

    1976-01-01

    Solar cells fabricated from Al, Ga and B doped Lopex silicon over a range of resistivities were tested under varying conditions of 1 MeV electron fluence, light exposures and thermal cycling. Results indicate that Al and Ga can replace B as a P type dopant to yield improved solar cell performance.

  4. Coupling power into accelerating mode of a three-dimensional silicon woodpile photonic band-gap waveguide

    Directory of Open Access Journals (Sweden)

    Ziran Wu

    2014-08-01

    Full Text Available Silicon woodpile photonic crystals provide a base structure with which to build a three-dimensional dielectric waveguide system for high-gradient laser-driven acceleration. To realize an on-chip woodpile laser accelerator, a key component is the power coupler to deliver laser power to the fundamental accelerating mode. The woodpile waveguide is periodically loaded in the longitudinal direction; therefore simple cross-sectional mode profile matching is not sufficient to launch the accelerating mode appropriately and will result in significant scattering loss. Several traveling-wave coupler design schemes developed for multicell radio frequency cavity accelerators can be adapted to the woodpile accelerator coupler design. This paper presents design procedures and results using these methods. We present simulations indicating near 100% power transmission between the transverse electric mode of a silicon-guide side coupler and the transverse–magnetic-like accelerating mode of a woodpile waveguide. The coupler launches a full traveling-wave propagation of the accelerating mode, which maintains its propagation quality over long waveguide structures, and provides better tolerance on the structure fabrication uncertainty and material breakdown than standing-wave coupling.

  5. Optical Effects Accompanying the Dynamical Bragg Diffraction in Linear 1D Photonic Crystals Based on Porous Silicon

    Directory of Open Access Journals (Sweden)

    Anton Maydykovskiy

    2014-10-01

    Full Text Available We survey our recent results on the observation and studies of the effects accompanying the dynamical Bragg diffraction in one-dimensional photonic crystals (PhC. Contrary to the kinematic Bragg diffraction, the dynamical one considers a continuous interaction between the waves travelling within a spatially-periodic structure and is the most pronounced in the so called Laue geometry, leading to a number of exciting phenomena. In the described experiments, we study the PhC based on porous silicon or porous quartz, made by the electrochemical etching of crystalline silicon with the consequent thermal annealing. Importantly, these PhC are approximately hundreds of microns thick and contain a few hundreds of periods, so that the experiments in the Laue diffraction scheme are available. We discuss the effect of the temporal splitting of femtosecond laser pulses and show that the effect is quite sensitive to the polarization and the phase of a femtosecond laser pulse. We also show the experimental realization of the Pendular effect in porous quartz PhC and demonstrate the experimental conditions for the total spatial switching of the output radiation between the transmitted and diffracted directions. All described effects are of high interest for the control over the light propagation based on PhC structures.

  6. The fabrication and visible-near-infrared optical modulation of vanadium dioxide/silicon dioxide composite photonic crystal structure

    Science.gov (United States)

    Liang, Jiran; Li, Peng; Song, Xiaolong; Zhou, Liwei

    2017-12-01

    We demonstrated a visible and near-infrared light tunable photonic nanostructure, which is composed of vanadium dioxide (VO2) thin film and silicon dioxide (SiO2) ordered nanosphere arrays. The vanadium films were sputtered on two-dimensional (2D) SiO2 sphere arrays. VO2 thin films were prepared by rapid thermal annealing (RTA) method with different oxygen flow rates. The close-packed VO2 shell formed a continuous surface, the composition of VO2 films in the structure changed when the oxygen flow rates increased. The 2D VO2/SiO2 composite photonic crystal structure exhibited transmittance trough tunability and near-infrared (NIR) transmittance modulation. When the oxygen flow rate increased from 3 slpm to 4 slpm, the largest transmittance trough can be regulated from 904 to 929 nm at low temperature, the transmittance troughs also appear blue shift when the VO2 phase changes from insulator to metal. The composite nanostructure based on VO2 films showed visible transmittance tunability, which would provide insights into the glass color changing in smart windows.

  7. Real-time Monitoring of Sustained Drug Release using the Optical Properties of Porous Silicon Photonic Crystal Particles

    Science.gov (United States)

    Wu, E.C.; Andrew, J.S.; Cheng, L; Freeman, W.R.; Pearson, L; Sailor, M.J.

    2011-01-01

    A controlled and observable drug delivery system that enables long-term local drug administration is reported. Biodegradable and biocompatible drug-loaded porous Si microparticles were prepared from silicon wafers, resulting in a porous 1-dimensional photonic crystal (rugate filter) approx. 12 micrometers thick and 35 micrometers across. An organic linker, 1-undecylenic acid, was attached to the Si-H terminated inner surface of the particles by hydrosilylation and the anthracycline drug daunorubicin was bound to the carboxy terminus of the linker. Degradation of the porous Si matrix in vitro was found to release the drug in a linear and sustained fashion for 30 d. The bioactivity of the released daunorubicin was verified on retinal pigment epithelial (RPE) cells. The degradation/drug delivery process was monitored in situ by digital imaging or spectroscopic measurement of the photonic resonance reflected from the nanostructured particles, and a simple linear correlation between observed wavelength and drug release was observed. Changes in the optical reflectance spectrum were sufficiently large to be visible as a distinctive red to green color change. PMID:21122914

  8. Tuning of a cavity in a silicon photonic crystal by thermal expansion of an elastomeric infill

    NARCIS (Netherlands)

    Erdamar, A.K.; Van Leest, M.M.; Picken, S.J.; Caro, J.

    2011-01-01

    We use an elastomer as infill material for a photonic crystal. As a result of the thermal-expansion-induced strongly negative thermal optical coefficient, this material is highly suitable for thermal tuning of the transmission of a cavity. This is demonstrated by global infilling of a hole-type

  9. Silicon photonic micro-ring resonators to sense strain and ultrasound

    NARCIS (Netherlands)

    Westerveld, W.J.

    2014-01-01

    We demonstrated that photonic micro-ring resonators can be used in micro-machined ultrasound microphones. This might cause a breakthrough in array transducers for ultrasonography; first because optical multiplexing allows array interrogation via one optical fiber and second because the

  10. Thermal tuning of a silicon photonic crystal cavity infilled with an elastomer

    NARCIS (Netherlands)

    Erdamar, A.K.; Van Leest, M.M.; Picken, S.J.; Caro, J.

    2011-01-01

    Thermal tuning of the transmission of an elastomer infilled photonic crystal cavity is studied. An elastomer has a thermal expansion-induced negative thermo-optic coefficient that leads to a strong decrease of the refractive index upon heating. This property makes elastomer highly suitable for

  11. Use of epitaxial silicon diodes in photon dosimetry; Uso de diodos epitaxiais de SI em dosimetria de fotons

    Energy Technology Data Exchange (ETDEWEB)

    Pereira, Lilian Nunes

    2013-07-01

    In this work we report on results obtained with two rad-hard epitaxial (EPI) silicon diodes as on-line dosimeter for diagnostic radiology, mammography and computed tomography, in the 28 kV to 150 kV range. The epitaxial diodes used were processed at University of Hamburg on 50 μm thick epitaxial silicon layer. One sample was not irradiated before using as a dosimeter, while the other received a gamma pre-dose of 200kGy from {sup 60}Co. For comparison, a standard float zone silicon diode was also studied. The samples irradiation was performed using X-ray beams from a Pantak/Seifert generator, model Isovolt 160 HS, previously calibrated with standardized ionization chambers, located at Laboratorio de Calibracao de Instrumentos of IPEN-CNEN/SP. The diode was connected to an electrometer Keithley 6517B in the photovoltaic mode. Irradiations were carried out with the diodes positioned at lm from the X-ray tube (focal spot). The main dosimetric parameters of the EPI samples were evaluated in according to IEC 61674 norm. The calibration coefficients of the diode, in terms of air kerma, were also determined. The repeatability was measured with photon beams of all qualities. The current signals induced showed the diodes are stable, characterized by coefficients of variation less than 0.3%. The current response of the unirradiated EPI diode has been shown to be very linear with dose-rate in the range of 0.8 up to 77.2 mGy/min. A linear relation between charge and dose in the whole energy range was observed for the three samples. It is important to notice that for EPI diodes non energy dependence was observed for mammography beams and until 70kV for radiodiagnostic qualities. The unirradiated diode presented sensitivity higher than the others, showing a decrease of 8% in this parameter after accumulated dose of 49.15 Gy. The dark currents were stable about 0.4 pA during the irradiations, value 10{sup 4} higher than the lowest photocurrents measured. The directional response

  12. Silicon photonics fiber-to-the-home transceiver array based on transfer-printing-based integration of III-V photodetectors.

    Science.gov (United States)

    Zhang, Jing; De Groote, Andreas; Abbasi, Amin; Loi, Ruggero; O'Callaghan, James; Corbett, Brian; Trindade, António José; Bower, Christopher A; Roelkens, Gunther

    2017-06-26

    A 4-channel silicon photonics transceiver array for Point-to-Point (P2P) fiber-to-the-home (FTTH) optical networks at the central office (CO) side is demonstrated. A III-V O-band photodetector array was integrated onto the silicon photonic transmitter through transfer printing technology, showing a polarization-independent responsivity of 0.39 - 0.49 A/W in the O-band. The integrated PDs (30 × 40 μm 2 mesa) have a 3 dB bandwidth of 11.5 GHz at -3 V bias. Together with high-speed C-band silicon ring modulators whose bandwidth is up to 15 GHz, operation of the transceiver array at 10 Gbit/s is demonstrated. The use of transfer printing for the integration of the III-V photodetectors allows for an efficient use of III-V material and enables the scalable integration of III-V devices on silicon photonics wafers, thereby reducing their cost.

  13. Efficiency Enhancement of Silicon Heterojunction Solar Cells via Photon Management Using Graphene Quantum Dot as Downconverters

    KAUST Repository

    Tsai, Meng-Lin

    2015-12-16

    By employing graphene quantum dots (GQDs), we have achieved a high efficiency of 16.55% in n-type Si heterojunction solar cells. The efficiency enhancement is based on the photon downconversion phenomenon of GQDs to make more photons absorbed in the depletion region for effective carrier separation, leading to the enhanced photovoltaic effect. The short circuit current and the fill factor are increased from 35.31 to 37.47 mA/cm2 and 70.29% to 72.51%, respectively. The work demonstrated here holds the promise for incorporating graphene-based materials in commercially available solar devices for developing ultra-high efficiency photovoltaic cells in the future.

  14. Efficiency Enhancement of Silicon Heterojunction Solar Cells via Photon Management Using Graphene Quantum Dot as Downconverters.

    Science.gov (United States)

    Tsai, Meng-Lin; Tu, Wei-Chen; Tang, Libin; Wei, Tzu-Chiao; Wei, Wan-Rou; Lau, Shu Ping; Chen, Lih-Juann; He, Jr-Hau

    2016-01-13

    By employing graphene quantum dots (GQDs), we have achieved a high efficiency of 16.55% in n-type Si heterojunction solar cells. The efficiency enhancement is based on the photon downconversion phenomenon of GQDs to make more photons absorbed in the depletion region for effective carrier separation, leading to the enhanced photovoltaic effect. The short circuit current and the fill factor are increased from 35.31 to 37.47 mA/cm(2) and 70.29% to 72.51%, respectively. The work demonstrated here holds the promise for incorporating graphene-based materials in commercially available solar devices for developing ultrahigh efficiency photovoltaic cells in the future.

  15. Two-photon spin-polarization spectroscopy in silicon-doped GaAs.

    Science.gov (United States)

    Miah, M Idrish

    2009-05-14

    We generate spin-polarized electrons in bulk GaAs using circularly polarized two-photon pumping with excess photon energy (DeltaE) and detect them by probing the spin-dependent transmission of the sample. The spin polarization of conduction band electrons is measured and is found to be strongly dependent on DeltaE. The initial polarization, pumped with DeltaE=100 meV, at liquid helium temperature is estimated to be approximately 49.5%, which is very close to the theoretical value (50%) permitted by the optical selection rules governing transitions from heavy-hole and light-hole states to conduction band states in a bulk sample. However, the polarization pumped with larger DeltaE decreases rapidly because of the exciting carriers from the split-off band.

  16. Local Heating of Discrete Droplets Using Magnetic Porous Silicon-Based Photonic Crystals

    OpenAIRE

    Park, Ji-Ho; Derfus, Austin M.; Segal, Ester; Vecchio, Kenneth S.; Bhatia, Sangeeta N.; Sailor, Michael J.

    2006-01-01

    This paper describes a method for local heating of discrete micro-liter scale liquid droplets. The droplets are covered with magnetic porous Si microparticles, and heating is achieved by application of an external alternating electromagnetic field. The magnetic porous Si microparticles consist of two layers: the top layer contains a photonic code and it is hydrophobic, with surface-grafted dodecyl moieties. The bottom layer consists of a hydrophilic Si oxide host layer that is infused with Fe...

  17. Radiation-induced conductivity of doped silicon in response to photon, proton and neutron irradiation

    International Nuclear Information System (INIS)

    Kishimoto, N.; Amekura, H.; Plaksin, O.A.; Stepanov, V.A.

    2000-01-01

    The opto-electronic performance of semiconductors during reactor operation is restricted by radiation-induced conductivity (RIC) and the synergistic effects of neutrons/ions and photons. The RICs of Si due to photons, protons and pulsed neutrons have been evaluated, aiming at radiation correlation. Protons of 17 MeV with an ionizing dose rate of 10 3 Gy/s and/or photons (hν=1.3 eV) were used to irradiate impurity-doped Si (2x10 16 B atoms/cm 3 ) at 300 and 200 K. Proton-induced RIC (p-RIC) and photoconductivity (PC) were intermittently detected in an accelerator device. Neutron-induced RIC (n-RIC) was measured for the same Si in a pulsed fast-fission reactor, BARS-6, with a 70-μs pulse of 2x10 12 n/cm 2 (E>0.01 MeV) and a dose rate of up to 6x10 5 Gy/s. The neutron irradiation showed a saturation tendency in the flux dependence at 300 K due to the strong electronic excitation. Normalization of the electronic excitation, including the pulsed regime, gave a fair agreement among the different radiation environments. Detailed comparison among PC, p-RIC and n-RIC is discussed in terms of radiation correlation including the in-pile condition

  18. Fabrication and tribological properties of self-assembled monolayer of n-alkyltrimethoxysilane on silicon: Effect of SAM alkyl chain length

    International Nuclear Information System (INIS)

    Huo, Lixia; Du, Pengcheng; Zhou, Hui; Zhang, Kaifeng; Liu, Peng

    2017-01-01

    Highlights: • n-Alkyltrimethoxysilanes with various chain lengths were self-assembled on silicon. • Effect of alkyl chain lengths (C6, C12, or C18) on the SAMs was investigated. • Surface roughness of the SAMs decreased with increasing the alkyl chain lengths. • The C 12 -SAM possessed superior friction reduction and wear resistance. - Abstract: It is well known that the self-assembled organic molecules on a solid surface exhibit the friction-reducing performance. However, the effect of the molecular size of the self-assembled organic molecules has not been established. In the present work, self-assembled monolayers (SAMs) of n-alkyltrimethoxysilanes with different alkyl chain lengths (C 6 , C 12 , or C 18 ) were fabricated on silicon substrate. The water contact angles of the SAMs increased from 26.8° of the hydroxylated silicon substrate to near 60° after self-assembly. The atomic force microscopy (AFM) analysis results showed that the mean roughness (R a ) of the SAMs decreased with increasing the alkyl chain length. The tribological properties of the SAMs sliding against Al 2 O 3 ball were evaluated on an UMT-2 tribometer, and the worn surfaces of the samples were analyzed by means of Nano Scratch Tester and surface profilometry. It was found that lowest friction coefficient and smallest width of wear were achieved with the SAMs of C 12 alkyl chain (C 12 -SAM). The superior friction reduction and wear resistance of the SAMs in comparison with the bare silicon substrate are attributed to good adhesion of the self-assembled films to the substrate, especially the C 12 -SAM with desirable alkyl chain length.

  19. Fabrication and tribological properties of self-assembled monolayer of n-alkyltrimethoxysilane on silicon: Effect of SAM alkyl chain length

    Energy Technology Data Exchange (ETDEWEB)

    Huo, Lixia [National Key Laboratory of Science and Technology on Vacuum Technology and Physics, Lanzhou Institute of Physics, Lanzhou, Gansu 730010 (China); Institute of Polymer Science and Engineering, College of Chemistry and Chemical Engineering, Lanzhou University, Gansu 730000 (China); Du, Pengcheng [Institute of Polymer Science and Engineering, College of Chemistry and Chemical Engineering, Lanzhou University, Gansu 730000 (China); Zhou, Hui; Zhang, Kaifeng [National Key Laboratory of Science and Technology on Vacuum Technology and Physics, Lanzhou Institute of Physics, Lanzhou, Gansu 730010 (China); Liu, Peng, E-mail: pliu@lzu.edu.cn [Institute of Polymer Science and Engineering, College of Chemistry and Chemical Engineering, Lanzhou University, Gansu 730000 (China)

    2017-02-28

    Highlights: • n-Alkyltrimethoxysilanes with various chain lengths were self-assembled on silicon. • Effect of alkyl chain lengths (C6, C12, or C18) on the SAMs was investigated. • Surface roughness of the SAMs decreased with increasing the alkyl chain lengths. • The C{sub 12}-SAM possessed superior friction reduction and wear resistance. - Abstract: It is well known that the self-assembled organic molecules on a solid surface exhibit the friction-reducing performance. However, the effect of the molecular size of the self-assembled organic molecules has not been established. In the present work, self-assembled monolayers (SAMs) of n-alkyltrimethoxysilanes with different alkyl chain lengths (C{sub 6}, C{sub 12}, or C{sub 18}) were fabricated on silicon substrate. The water contact angles of the SAMs increased from 26.8° of the hydroxylated silicon substrate to near 60° after self-assembly. The atomic force microscopy (AFM) analysis results showed that the mean roughness (R{sub a}) of the SAMs decreased with increasing the alkyl chain length. The tribological properties of the SAMs sliding against Al{sub 2}O{sub 3} ball were evaluated on an UMT-2 tribometer, and the worn surfaces of the samples were analyzed by means of Nano Scratch Tester and surface profilometry. It was found that lowest friction coefficient and smallest width of wear were achieved with the SAMs of C{sub 12} alkyl chain (C{sub 12}-SAM). The superior friction reduction and wear resistance of the SAMs in comparison with the bare silicon substrate are attributed to good adhesion of the self-assembled films to the substrate, especially the C{sub 12}-SAM with desirable alkyl chain length.

  20. Silicon-photonics light source realized by III-V/Si grating-mirror laser

    DEFF Research Database (Denmark)

    Chung, Il-Sug; Mørk, Jesper

    2010-01-01

    A III–V/Si vertical-cavity in-plane-emitting laser structure is suggested and numerically investigated. This hybrid laser consists of a distributed Bragg reflector, a III–V active region, and a high-index-contrast grating HCG connected to an in-plane output waveguide. The HCG and the output...... waveguide are made in the Si layer of a silicon-on-insulator wafer by using Si-electronics-compatible processing. The HCG works as a highly-reflective mirror for vertical resonance and at the same time routes light to the in-plane output waveguide. Numerical simulations show superior performance compared...

  1. Gigascale Silicon Photonic Transmitters Integrating HBT-based Carrier-injection Electroabsorption Modulator Structures

    Science.gov (United States)

    Fu, Enjin

    Demand for more bandwidth is rapidly increasing, which is driven by data intensive applications such as high-definition (HD) video streaming, cloud storage, and terascale computing applications. Next-generation high-performance computing systems require power efficient chip-to-chip and intra-chip interconnect yielding densities on the order of 1Tbps/cm2. The performance requirements of such system are the driving force behind the development of silicon integrated optical interconnect, providing a cost-effective solution for fully integrated optical interconnect systems on a single substrate. Compared to conventional electrical interconnect, optical interconnects have several advantages, including frequency independent insertion loss resulting in ultra wide bandwidth and link latency reduction. For high-speed optical transmitter modules, the optical modulator is a key component of the optical I/O channel. This thesis presents a silicon integrated optical transmitter module design based on a novel silicon HBT-based carrier injection electroabsorption modulator (EAM), which has the merits of wide optical bandwidth, high speed, low power, low drive voltage, small footprint, and high modulation efficiency. The structure, mechanism, and fabrication of the modulator structure will be discussed which is followed by the electrical modeling of the post-processed modulator device. The design and realization of a 10Gbps monolithic optical transmitter module integrating the driver circuit architecture and the HBT-based EAM device in a 130nm BiCMOS process is discussed. For high power efficiency, a 6Gbps ultra-low power driver IC implemented in a 130nm BiCMOS process is presented. The driver IC incorporates an integrated 27-1 pseudo-random bit sequence (PRBS) generator for reliable high-speed testing, and a driver circuit featuring digitally-tuned pre-emphasis signal strength. With outstanding drive capability, the driver module can be applied to a wide range of carrier

  2. Interfacing Dielectric-Loaded Plasmonic and Silicon Photonic Waveguides: Theoretical Analysis and Experimental Demonstration

    DEFF Research Database (Denmark)

    Tsilipakos, O.; Pitilakis, A.; Yioultsis, T. V.

    2012-01-01

    A comprehensive theoretical analysis of end-fire coupling between dielectric-loaded surface plasmon polariton and rib/wire silicon-on-insulator (SOI) waveguides is presented. Simulations are based on the 3-D vector finite element method. The geometrical parameters of the interface are varied...... in order to identify the ones leading to optimum performance, i.e., maximum coupling efficiency. Fabrication tolerances about the optimum parameter values are also assessed. In addition, the effect of a longitudinal metallic stripe gap on coupling efficiency is quantified, since such gaps have been...... observed in fabricated structures....

  3. INFLUENCE OF IMPULSE PHOTON ANNEALING ON STRUCTURE AND PHASE COMPOSITION OF THIN-FILMED SYSTEMS ON BASIS OF SILICON AND TRANSITION METALS

    Directory of Open Access Journals (Sweden)

    M. I. Markevich

    2013-01-01

    Full Text Available Methods of transmission electronic microscopy, electron diffraction, energy dispersive X-ray microanalysis have been used for investigations of element composition, regularities in structural and phase transmissions occurring in thin-filmed systems Si–Fe–Si and TiN–Ti–Si while using impulse photon annealing in terms of radiation energy density. Optimum parameters of impulse photon annealing for formation of β-FeSi2 and C54-TiSi2 thin films on silicon have been determined in the paper.

  4. Fabrication and optical characteristics of silicon-based two-dimensional wavelength division multiplexing splitter with photonic crystal directional waveguide couplers

    International Nuclear Information System (INIS)

    Liu, Cheng-Yang

    2011-01-01

    Photonic crystals have many potential applications because of their ability to control lightwave propagation. We report on the fabrication and optical properties of quasi-two-dimensional photonic crystals with triangular lattice of dielectric rods in air. Rod-type photonic crystal structures were fabricated in silicon by electron beam lithography and dry-etching techniques. Wavelength division multiplexing splitters were fabricated from two-dimensional photonic crystal directional waveguide couplers. Transmission spectra were measured and device operation was shown to be in agreement with theoretical calculations. The splitters can be used in visible light region. Such an approach to photonic element systems should enable new applications for designing components in photonic integrated circuits. -- Highlights: → We report the fabrication and optical properties of rod-type photonic crystal. → The splitter was fabricated by electron beam lithography and dry-etching techniques. → The splitter was composed of directional waveguide couplers. → Measured transmission spectra are in agreement with theoretical calculations. → The splitters can be used in visible light region.

  5. Performance prediction for silicon photonics integrated circuits with layout-dependent correlated manufacturing variability.

    Science.gov (United States)

    Lu, Zeqin; Jhoja, Jaspreet; Klein, Jackson; Wang, Xu; Liu, Amy; Flueckiger, Jonas; Pond, James; Chrostowski, Lukas

    2017-05-01

    This work develops an enhanced Monte Carlo (MC) simulation methodology to predict the impacts of layout-dependent correlated manufacturing variations on the performance of photonics integrated circuits (PICs). First, to enable such performance prediction, we demonstrate a simple method with sub-nanometer accuracy to characterize photonics manufacturing variations, where the width and height for a fabricated waveguide can be extracted from the spectral response of a racetrack resonator. By measuring the spectral responses for a large number of identical resonators spread over a wafer, statistical results for the variations of waveguide width and height can be obtained. Second, we develop models for the layout-dependent enhanced MC simulation. Our models use netlist extraction to transfer physical layouts into circuit simulators. Spatially correlated physical variations across the PICs are simulated on a discrete grid and are mapped to each circuit component, so that the performance for each component can be updated according to its obtained variations, and therefore, circuit simulations take the correlated variations between components into account. The simulation flow and theoretical models for our layout-dependent enhanced MC simulation are detailed in this paper. As examples, several ring-resonator filter circuits are studied using the developed enhanced MC simulation, and statistical results from the simulations can predict both common-mode and differential-mode variations of the circuit performance.

  6. Understanding Photon / Free Carrier Interaction in LVP Signals on Ultra-Thin Silicon ICs.

    Energy Technology Data Exchange (ETDEWEB)

    Beutler, Joshua [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Cole, Jr., Edward I. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Smith, Norman F. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Clement, John Joseph [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Friedman, Caitlin Anne Rochford [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2017-09-01

    This project investigated a recently patented Sandia technology known as visible light Laser Voltage Probing (LVP). In this effort we carefully prepared well understood and characterized samples for testing. These samples were then operated across a range of configurations to minimize the possibility of superposition of multiple photon carrier interactions as data was taken with conventional and visible light LVP systems. Data consisted of LVP waveforms and Laser Voltage Images (LVI). Visible light (633 nm) LVP data was compared against 1319 nm and 1064 nm conventional LVP data to better understand the similarities and differences in mechanisms for all wavelengths of light investigated. The full text can be obtained by reaching the project manager, Ed Cole or the Cyber IA lead, Justin Ford.

  7. arXiv Single-electron and single-photon sensitivity with a silicon Skipper CCD

    CERN Document Server

    Tiffenberg, Javier; Drlica-Wagner, Alex; Essig, Rouven; Guardincerri, Yann; Holland, Steve; Volansky, Tomer; Yu, Tien-Tien

    2017-09-26

    We have developed ultralow-noise electronics in combination with repetitive, nondestructive readout of a thick, fully depleted charge-coupled device (CCD) to achieve an unprecedented noise level of 0.068  e- rms/pixel. This is the first time that discrete subelectron readout noise has been achieved reproducible over millions of pixels on a stable, large-area detector. This enables the contemporaneous, discrete, and quantized measurement of charge in pixels, irrespective of whether they contain zero electrons or thousands of electrons. Thus, the resulting CCD detector is an ultra-sensitive calorimeter. It is also capable of counting single photons in the optical and near-infrared regime. Implementing this innovative non-destructive readout system has a negligible impact on CCD design and fabrication, and there are nearly immediate scientific applications. As a particle detector, this CCD will have unprecedented sensitivity to low-mass dark matter particles and coherent neutrino-nucleus scattering, while ...

  8. Rare-Earth Implanted MOS Devices for Silicon Photonics Microstructural, Electrical and Optoelectronic Properties

    CERN Document Server

    Rebohle, Lars

    2010-01-01

    The book concentrates on the microstructural, electric and optoelectronic properties of rare-earth implanted MOS structures and their use as light emitters in potential applications. It describes the structural formation processes in the gate oxide during fabrication and under operation, how this microstructure development will affect the electrical device performance and how both microstructure and electrical characteristics determine the optoelectronic features of the light emitters. However, most of the discussed physical processes as well as the described fabrication methods and device characterization techniques are of general interest and are beyond the scope of this type of light emitter. The book will be of value to engineers, physicists, and scientists dealing either with Si based photonics in particular or optoelectronic device fabrication and characterization in general.

  9. Decoy-state BB84 protocol using space division multiplexing in silicon photonics

    DEFF Research Database (Denmark)

    Bacco, Davide; Ding, Yunhong; Dalgaard, Kjeld

    2017-01-01

    Quantum key distribution (QKD), a technique based on quantum physics, provides unconditional secure quantum keys to be shared between two or more clients (Alice and Bob) [1]. Most QKD systems are implemented in a point-to-point link using bulky and expensive devices. Consequently a large scale...... the superposition of the quantum state between cores, combined with a positive/negative phase relation. A train of weak coherent pulses (5 kHz repetition and 10 ns wide) are injected into the transmitter chip (Alice), where multiple variable optical attenuators (VOAs) are used to decrease the number of photons per...... pulse (μ technique is implemented. Alice, by using an FPGA board, (Fig. 1(a)) randomly chooses one of the two bases and one of the two states to transmit to Bob. The qubits are matched to two cores of a multi-core fiber, through...

  10. High efficiency diffractive grating coupler based on transferred silicon nanomembrane overlay on photonic waveguide

    Energy Technology Data Exchange (ETDEWEB)

    Saha, Tapas Kumar; Zhou Weidong [University of Texas at Arlington, Department of Electrical Engineering, NanoFAB Center, Arlington, TX 76019-0072 (United States)

    2009-04-21

    We report here the design of a new type of high efficiency grating coupler, based on single crystalline Si nanomembrane overlay and stacking. Such high efficiency diffractive grating couplers are designed for the purpose of coupling light between single mode fibres and nanophotonic waveguides, and for the coupling between multiple photonic interconnect layers for compact three-dimensional vertical integration. Two-dimensional model simulation based on eigenmode expansion shows a diffractive power-up efficiency of 81% and a fibre coupling efficiency of 64%. With nanomembrane stacking, it is feasible to integrate the side-distributed Bragg reflector and bottom reflector, which can lead to the diffractive power-up efficiency and the fibre coupling efficiency of 97% and 73.5%, respectively. For a negatively detuned coupler, the bottom reflector is not needed, and the diffractive power-up efficiency can reach 98% over a large spectral range. The device is extremely tolerant to fabrication errors.

  11. Calibrated Link Budget of a Silicon Photonics WDM Transceiver with SOA and Semiconductor Mode-Locked Laser.

    Science.gov (United States)

    Moscoso-Mártir, Alvaro; Müller, Juliana; Islamova, Elmira; Merget, Florian; Witzens, Jeremy

    2017-09-20

    Based on the single channel characterization of a Silicon Photonics (SiP) transceiver with Semiconductor Optical Amplifier (SOA) and semiconductor Mode-Locked Laser (MLL), we evaluate the optical power budget of a corresponding Wavelength Division Multiplexed (WDM) link in which penalties associated to multi-channel operation and the management of polarization diversity are introduced. In particular, channel cross-talk as well as Cross Gain Modulation (XGM) and Four Wave Mixing (FWM) inside the SOA are taken into account. Based on these link budget models, the technology is expected to support up to 12 multiplexed channels without channel pre-emphasis or equalization. Forward Error Correction (FEC) does not appear to be required at 14 Gbps if the SOA is maintained at 25 °C and MLL-to-SiP as well as SiP-to-SOA interface losses can be maintained below 3 dB. In semi-cooled operation with an SOA temperature below 55 °C, multi-channel operation is expected to be compatible with standard 802.3bj Reed-Solomon FEC at 14 Gbps provided interface losses are maintained below 4.5 dB. With these interface losses and some improvements to the Transmitter (Tx) and Receiver (Rx) electronics, 25 Gbps multi-channel operation is expected to be compatible with 7% overhead hard decision FEC.

  12. Effects of Conjugation in Length and Dimension on Two-Photon Properties of Fluorene-Based Chromophores (Preprint)

    National Research Council Canada - National Science Library

    Pachter, Ruth; Nguyen, Kiet A; Day, Paul N; Kannan, Ramamurthi

    2007-01-01

    We report the computed two-photon (TPA) absorption spectra based upon the results obtained from quadratic response time-dependent density functional theory for fluorine-based donor-pi-acceptor molecules...

  13. Fabrication and tribological properties of self-assembled monolayer of n-alkyltrimethoxysilane on silicon: Effect of SAM alkyl chain length

    Science.gov (United States)

    Huo, Lixia; Du, Pengcheng; Zhou, Hui; Zhang, Kaifeng; Liu, Peng

    2017-02-01

    It is well known that the self-assembled organic molecules on a solid surface exhibit the friction-reducing performance. However, the effect of the molecular size of the self-assembled organic molecules has not been established. In the present work, self-assembled monolayers (SAMs) of n-alkyltrimethoxysilanes with different alkyl chain lengths (C6, C12, or C18) were fabricated on silicon substrate. The water contact angles of the SAMs increased from 26.8° of the hydroxylated silicon substrate to near 60° after self-assembly. The atomic force microscopy (AFM) analysis results showed that the mean roughness (Ra) of the SAMs decreased with increasing the alkyl chain length. The tribological properties of the SAMs sliding against Al2O3 ball were evaluated on an UMT-2 tribometer, and the worn surfaces of the samples were analyzed by means of Nano Scratch Tester and surface profilometry. It was found that lowest friction coefficient and smallest width of wear were achieved with the SAMs of C12 alkyl chain (C12-SAM). The superior friction reduction and wear resistance of the SAMs in comparison with the bare silicon substrate are attributed to good adhesion of the self-assembled films to the substrate, especially the C12-SAM with desirable alkyl chain length.

  14. High-Responsivity Graphene–Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit

    Energy Technology Data Exchange (ETDEWEB)

    Shiue, Ren-Jye; Gao, Yuanda; Wang, Yifei; Peng, Cheng; Robertson, Alexander D.; Efetov, Dmitri K.; Assefa, Solomon; Koppens, Frank H. L.; Hone, James; Englund, Dirk

    2015-11-11

    Graphene and other two-dimensional (2D) materials have emerged as promising materials for broadband and ultrafast photodetection and optical modulation. These optoelectronic capabilities can augment complementary metal–oxide–semiconductor (CMOS) devices for high-speed and low-power optical interconnects. Here, we demonstrate an on-chip ultrafast photodetector based on a two-dimensional heterostructure consisting of high-quality graphene encapsulated in hexagonal boron nitride. Coupled to the optical mode of a silicon waveguide, this 2D heterostructure-based photodetector exhibits a maximum responsivity of 0.36 A/W and high-speed operation with a 3 dB cutoff at 42 GHz. From photocurrent measurements as a function of the top-gate and source-drain voltages, we conclude that the photoresponse is consistent with hot electron mediated effects. At moderate peak powers above 50 mW, we observe a saturating photocurrent consistent with the mechanisms of electron–phonon supercollision cooling. This nonlinear photoresponse enables optical on-chip autocorrelation measurements with picosecond-scale timing resolution and exceptionally low peak powers.

  15. Spectral CT of the extremities with a silicon strip photon counting detector

    Science.gov (United States)

    Sisniega, A.; Zbijewski, W.; Stayman, J. W.; Xu, J.; Taguchi, K.; Siewerdsen, J. H.

    2015-03-01

    Purpose: Photon counting x-ray detectors (PCXDs) are an important emerging technology for spectral imaging and material differentiation with numerous potential applications in diagnostic imaging. We report development of a Si-strip PCXD system originally developed for mammography with potential application to spectral CT of musculoskeletal extremities, including challenges associated with sparse sampling, spectral calibration, and optimization for higher energy x-ray beams. Methods: A bench-top CT system was developed incorporating a Si-strip PCXD, fixed anode x-ray source, and rotational and translational motions to execute complex acquisition trajectories. Trajectories involving rotation and translation combined with iterative reconstruction were investigated, including single and multiple axial scans and longitudinal helical scans. The system was calibrated to provide accurate spectral separation in dual-energy three-material decomposition of soft-tissue, bone, and iodine. Image quality and decomposition accuracy were assessed in experiments using a phantom with pairs of bone and iodine inserts (3, 5, 15 and 20 mm) and an anthropomorphic wrist. Results: The designed trajectories improved the sampling distribution from 56% minimum sampling of voxels to 75%. Use of iterative reconstruction (viz., penalized likelihood with edge preserving regularization) in combination with such trajectories resulted in a very low level of artifacts in images of the wrist. For large bone or iodine inserts (>5 mm diameter), the error in the estimated material concentration was errors of 20-40% were observed and motivate improved methods for spectral calibration and optimization of the edge-preserving regularizer. Conclusion: Use of PCXDs for three-material decomposition in joint imaging proved feasible through a combination of rotation-translation acquisition trajectories and iterative reconstruction with optimized regularization.

  16. Photonic Design for Photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Kosten, E.; Callahan, D.; Horowitz, K.; Pala, R.; Atwater, H.

    2014-08-28

    We describe photonic design approaches for silicon photovoltaics including i) trapezoidal broadband light trapping structures ii) broadband light trapping with photonic crystal superlattices iii) III-V/Si nanowire arrays designed for broadband light trapping.

  17. Performance of a radiation hard 128 channel analogue front-end chip for the readout of a silicon-based hybrid photon detector

    CERN Document Server

    Lacasta, C; Dulinski, W; Chesi, Enrico Guido; Joram, C; Kaplon, J; Lozano-Bahilo, J; Séguinot, Jacques; Szczygiel, R; Weilhammer, Peter; Ypsilantis, Thomas

    2003-01-01

    The performance is described of a front-end chip, the SCT128A-LC chip, originally developed for the readout of a silicon based Hybrid Photon Detector (HPD), which is part of an RICH detector to be run in an LHC experimental environment. The relatively low signal charge from single photoelectrons, impinging on the silicon pad sensor, put very stringent requirements on the noise performance of the front-end chip. An absolute noise calibration using X-ray sources and a **2**4**1Am gamma source was performed. It is demonstrated that sufficiently good signal over noise ratio can be obtained to use this chip for the read-out of an HPD in LHC experiments.

  18. Performance of a hybrid photon detector prototype with electrostatic cross-focussing and integrated silicon Pixel readout for Cherenkov ring detection

    CERN Document Server

    Alemi, M; Bibby, J H; Campbell, M; Duane, A; Easo, S; Gys, Thierry; Halley, A W; Piedigrossi, D; Puertolas, D; Rosso, E; Simmons, B; Snoeys, W; Websdale, David M; Wotton, S A; Wyllie, Ken H

    1999-01-01

    We report on the first test beam performance of a hybrid photon detector prototype, using binary readout electronics, intended for use in the ring imaging Cherenkov detectors of the LHCb experiment at the CERN Large Hadron Collider. The photon detector is based on a cross-focussed image intensifier tube geometry. The anode consists of a silicon pixel array bump-bonded to a binary readout chip with matching pixel electronics. The detector has been installed in a quarter-scale prototype vessel of the LHCb ring imaging Cherenkov system. Focussed ring images produced by 120 GeV/c negative pions traversing an air radiator have been recorded. The observed light yield and Cherenkov angle resolution are discussed.

  19. Octave-spanning supercontinuum generation at telecommunications wavelengths in a precisely dispersion- and length-controlled silicon-wire waveguide with a double taper structure

    Science.gov (United States)

    Ishizawa, Atsushi; Goto, Takahiro; Kou, Rai; Tsuchizawa, Tai; Matsuda, Nobuyuki; Hitachi, Kenichi; Nishikawa, Tadashi; Yamada, Koji; Sogawa, Tetsuomi; Gotoh, Hideki

    2017-07-01

    We demonstrate on-chip octave-spanning supercontinuum (SC) generation with a Si-wire waveguide (SWG). We precisely controlled the SWG width so that the group velocity becomes flat over a wide wavelength range. By adjusting the SWG length, we could reduce the optical losses due to two-photon absorption and pulse propagation. In addition, for efficient coupling between the laser pulse and waveguide, we fabricated a two-step inverse taper at both ends of the SWG. Using a 600-nm-wide SWG, we were able to generate a broadband SC spectrum at wavelengths from 1060 to 2200 nm at a -40 dB level with only 50-pJ laser energy from an Er-doped fiber laser oscillator. We found that we can generate an on-chip broadband SC spectrum with an SWG with a length even as small as 1.7 mm.

  20. Numerical simulation of the oxygen concentration distribution in silicon melt for different crystal lengths during Czochralski growth with a transverse magnetic field

    Science.gov (United States)

    Chen, Jyh-Chen; Chiang, Pei-Yi; Nguyen, Thi Hoai Thu; Hu, Chieh; Chen, Chun-Hung; Liu, Chien-Cheng

    2016-10-01

    A three-dimensional simulation model is used to study the oxygen concentration distribution in silicon crystal during the Czochralski growth process under a transverse uniform magnetic field. The flow, temperature, and oxygen concentration distributions inside the furnace are calculated for different crystal lengths. There is significant variation in the flow structure in the melt with the growth length. The results show that in the initial stages, there is a decrease in the oxygen concentration at the crystal-melt interface as the length of the growing crystal increases. As the crystal lengthens further, a minimum value is reached after which the oxygen concentration increases continuously. This trend is consistent with that shown in the experimental results. The variation of the oxygen concentration with the growth length is strongly related to the depth of the melt in the crucible and the flow structure inside the melt. Better uniformity of the axial oxygen concentration can be achieved by proper adjustment of the crucible rotation rate during the growth process.

  1. Time-resolved single-photon detection module based on silicon photomultiplier: A novel building block for time-correlated measurement systems

    Energy Technology Data Exchange (ETDEWEB)

    Martinenghi, E., E-mail: edoardo.martinenghi@polimi.it; Di Sieno, L.; Contini, D.; Dalla Mora, A. [Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy); Sanzaro, M. [Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy); Pifferi, A. [Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy); Istituto di Fotonica e Nanotecnologie, Consiglio Nazionale delle Ricerche, Piazza Leonardo da Vinci 32, 20133 Milano (Italy)

    2016-07-15

    We present the design and preliminary characterization of the first detection module based on Silicon Photomultiplier (SiPM) tailored for single-photon timing applications. The aim of this work is to demonstrate, thanks to the design of a suitable module, the possibility to easily exploit SiPM in many applications as an interesting detector featuring large active area, similarly to photomultipliers tubes, but keeping the advantages of solid state detectors (high quantum efficiency, low cost, compactness, robustness, low bias voltage, and insensitiveness to magnetic field). The module integrates a cooled SiPM with a total photosensitive area of 1 mm{sup 2} together with the suitable avalanche signal read-out circuit, the signal conditioning, the biasing electronics, and a Peltier cooler driver for thermal stabilization. It is able to extract the single-photon timing information with resolution better than 100 ps full-width at half maximum. We verified the effective stabilization in response to external thermal perturbations, thus proving the complete insensitivity of the module to environment temperature variations, which represents a fundamental parameter to profitably use the instrument for real-field applications. We also characterized the single-photon timing resolution, the background noise due to both primary dark count generation and afterpulsing, the single-photon detection efficiency, and the instrument response function shape. The proposed module can become a reliable and cost-effective building block for time-correlated single-photon counting instruments in applications requiring high collection capability of isotropic light and detection efficiency (e.g., fluorescence decay measurements or time-domain diffuse optics systems).

  2. Hybrid photon detectors

    CERN Document Server

    D'Ambrosio, C

    2003-01-01

    Hybrid photon detectors detect light via vacuum photocathodes and accelerate the emitted photoelectrons by an electric field towards inversely polarized silicon anodes, where they are absorbed, thus producing electron-hole pairs. These, in turn, are collected and generate electronic signals on their ohmic contacts. This review first describes the characteristic properties of the main components of hybrid photon detectors: light entrance windows, photocathodes, and silicon anodes. Then, essential relations describing the trajectories of photoelectrons in electric and magnetic fields and their backscattering from the silicon anodes are derived. Depending on their anode configurations, three families of hybrid photon detectors are presented: hybrid photomultiplier tubes with single anodes for photon counting with high sensitivity and for gamma spectroscopy; multi-anode photon detector tubes with anodes subdivided into square or hexagonal pads for position-sensitive photon detection; imaging silicon pixel array t...

  3. Direct Detection of Transcription Factors in Cotyledons during Seedling Development Using Sensitive Silicon-Substrate Photonic Crystal Protein Arrays1[OPEN

    Science.gov (United States)

    Jones, Sarah I.; Tan, Yafang; Shamimuzzaman, Md; George, Sherine; Cunningham, Brian T.; Vodkin, Lila

    2015-01-01

    Transcription factors control important gene networks, altering the expression of a wide variety of genes, including those of agronomic importance, despite often being expressed at low levels. Detecting transcription factor proteins is difficult, because current high-throughput methods may not be sensitive enough. One-dimensional, silicon-substrate photonic crystal (PC) arrays provide an alternative substrate for printing multiplexed protein microarrays that have greater sensitivity through an increased signal-to-noise ratio of the fluorescent signal compared with performing the same assay upon a traditional aminosilanized glass surface. As a model system to test proof of concept of the silicon-substrate PC arrays to directly detect rare proteins in crude plant extracts, we selected representatives of four different transcription factor families (zinc finger GATA, basic helix-loop-helix, BTF3/NAC [for basic transcription factor of the NAC family], and YABBY) that have increasing transcript levels during the stages of seedling cotyledon development. Antibodies to synthetic peptides representing the transcription factors were printed on both glass slides and silicon-substrate PC slides along with antibodies to abundant cotyledon proteins, seed lectin, and Kunitz trypsin inhibitor. The silicon-substrate PC arrays proved more sensitive than those performed on glass slides, detecting rare proteins that were below background on the glass slides. The zinc finger transcription factor was detected on the PC arrays in crude extracts of all stages of the seedling cotyledons, whereas YABBY seemed to be at the lower limit of their sensitivity. Interestingly, the basic helix-loop-helix and NAC proteins showed developmental profiles consistent with their transcript patterns, indicating proof of concept for detecting these low-abundance proteins in crude extracts. PMID:25635113

  4. Focused ion beam scan routine, dwell time and dose optimizations for submicrometre period planar photonic crystal components and stamps in silicon

    International Nuclear Information System (INIS)

    Hopman, Wico C L; Ay, Feridun; Hu, Wenbin; Gadgil, Vishwas J; Kuipers, Laurens; Pollnau, Markus; Ridder, Rene M de

    2007-01-01

    Focused ion beam (FIB) milling is receiving increasing attention for nanostructuring in silicon (Si). These structures can for example be used for photonic crystal structures in a silicon-on-insulator (SOI) configuration or for moulds which can have various applications in combination with imprint technologies. However, FIB fabrication of submicrometre holes having perfectly vertical sidewalls is still challenging due to the redeposition effect in Si. In this study we show how the scan routine of the ion beam can be used as a sidewall optimization parameter. The experiments have been performed in Si and SOI. Furthermore, we show that sidewall angles as small as 1.5 0 are possible in Si membranes using a spiral scan method. We investigate the effect of the dose, loop number and dwell time on the sidewall angle, interhole milling and total milling depth by studying the milling of single and multiple holes into a crystal. We show that the sidewall angles can be as small as 5 0 in (bulk) Si and SOI when applying a larger dose. Finally, we found that a relatively large dwell time of 1 ms and a small loop number is favourable for obtaining vertical sidewalls. By comparing the results with those obtained by others, we conclude that the number of loops at a fixed dose per hole is the parameter that determines the sidewall angle and not the dwell time by itself

  5. Delayed photon selfinterference

    International Nuclear Information System (INIS)

    Kessel', A.R.; Moiseev, S.A.

    1993-01-01

    Delayed photon selfinterference on a sample containing resonant two-level atoms is considered when the difference in the lengths in two optical paths exceeds the photon 'length'. It is shown that a reading pulse of the electromagnetic field can induce photon echo

  6. Echelle grating for silicon photonics applications: integration of electron beam lithography in the process flow and first results

    Science.gov (United States)

    Kaschel, Mathias; Letzkus, Florian; Butschke, Jörg; Skwierawski, Piotr; Schneider, Marc; Weber, Marc

    2016-05-01

    We present the technology steps to integrate an Echelle grating in the process flow of silicon-organic hybrid (SOH) modulators or related active devices. The CMOS-compatible process flow on SOI substrates uses a mix of optical i-line lithography and electron beam lithography (EBL). High speed optical data communication depends on wavelength divisions multiplexing and de-multiplexing devices like Echelle gratings. The minimum feature sizes vary from device to device and reach down to 60 nm inside a modulator, while the total area of a single Echelle grating is up to several mm2 of unprocessed silicon. Resist patterning using a variable shape beam electron beam pattern generator allows high resolution. An oxide hard mask is deposited, patterns are structured threefold by EBL and are later transferred to the silicon. We demonstrate a 9-channel multiplexer featuring a 2 dB on-chip loss and an adjacent channel crosstalk better than -22 dB. Additionally a 45-channel Echelle multiplexer is presented with 5 dB on chip loss and a channel crosstalk better than -12 dB. The devices cover an on-chip area of only 0.08 mm2 and 0.5 mm2 with a wavelength spacing of 10.5 nm and 2.0 nm, respectively.

  7. Propagation length enhancement of surface plasmon polaritons in gold nano-/micro-waveguides by the interference with photonic modes in the surrounding active dielectrics

    Directory of Open Access Journals (Sweden)

    Suárez Isaac

    2017-02-01

    Full Text Available In this work, the unique optical properties of surface plasmon polaritons (SPPs, i.e. subwavelength confinement or strong electric field concentration, are exploited to demonstrate the propagation of light signal at 600 nm along distances in the range from 17 to 150 μm for Au nanostripes 500 nm down to 100 nm wide (30 nm of height, respectively, both theoretically and experimentally. A low power laser is coupled into an optical fiber tip that is used to locally excite the photoluminescence of colloidal quantum dots (QDs dispersed in their surroundings. Emitted light from these QDs is generating the SPPs that propagate along the metal waveguides. Then, the above-referred propagation lengths were directly extracted from this novel experimental technique by studying the intensity of light decoupled at the output edge of the waveguide. Furthermore, an enhancement of the propagation length up to 0.4 mm is measured for the 500-nm-wide metal nanostripe, for which this effect is maximum. For this purpose, a simultaneous excitation of the same QDs dispersed in poly(methyl methacrylate waveguides integrated with the metal nanostructures is performed by end-fire coupling an excitation laser energy as low as 1 KW/cm2. The proposed mechanism to explain such enhancement is a non-linear interference effect between dielectric and plasmonic (supermodes propagating in the metal-dielectric structure, which can be apparently seen as an effective amplification or compensation effect of the gain material (QDs over the SPPs, as previously reported in literature. The proposed system and the method to create propagating SPPs in metal waveguides can be of interest for the application field of sensors and optical communications at visible wavelengths, among other applications, using plasmonic interconnects to reduce the dimensions of photonic chips.

  8. Two-Photon Laser-Assisted Device Alteration in Silicon Integrated Circuits (Open Access, Publisher’s Version)

    Science.gov (United States)

    2013-11-18

    2199–2207 (2003). 17. K. A. Serrels, E. Ramsay, R. J. Warburton, and D. T. Reid, “Nanoscale optical microscopy in the vectorial focusing regime,” Nat...was a proprietary 28 nm bulk-silicon test device (Vdd = 0.8 V, clock frequency = 50 MHz) containing production logic blocks. To exercise the device, a... production scan test, lasting 21 μs, was modified to engineer a race condition – as illustrated in Fig. 1. Data were launched through a data-path

  9. Photoacoustic spectroscopy analysis of silicon crystals

    International Nuclear Information System (INIS)

    Benamrani, H.; Satour, F.Z.; Zegadi, A.; Zouaoui, A.

    2012-01-01

    A high resolution fully automated photoacoustic spectrometer (PAS) of the gas-microphone type is used in the photon energy region 0.8–1.6 eV to analyze the optical properties of silicon single crystals at different frequencies between 25 and 312 Hz. At modulating frequencies at which the sample thickness approaches its thermal diffusion length, the results obtained of untreated specimens using different PA cells reveal the presence of several peaks in the absorption tail, some of which are independent of the photon energy. The magnitude of these peaks is seen to be stronger than that of the maximum of the fundamental edge of silicon, thus making it indistinct. At lower modulating frequencies at which the sample thickness is far less than its thermal diffusion length and using a highly reflecting backing material, multiple reflections of the light beam within the sample interfaces are seen to enhance the PA amplitude signal sensitivity response as predicted theoretically. The effect of etching silicon samples in a diluted solution of hydrofluoric acid (5%) on photoacoustic spectra has been investigated. It is observed that this process removes all spurious features in the spectra originating from the surface contaminants making the fundamental absorption edge clearly visible and leaving only one distinct peak at hν=0.9 eV. Transmission-photoacoustic (T-PAS) has also been used to study silicon single crystals. In the light of recent literature a comparison is carried out between the results obtained using the two techniques in determining the absorption coefficient and the gap energy. - Highlights: ► High resolution photoacoustic spectrometer used to analyze silicon crystals. ► Effects of sample preparation and the photoacoustic cell in measurements. ► Transmission-photoacoustic spectroscopy use in the study of silicon crystals. ► Comparison between the two modes of operation to characterise silicon.

  10. Polychromatic photons

    DEFF Research Database (Denmark)

    Keller, Ole

    2002-01-01

    A review is given of the space-time wave mechanics of single photons, a subject with an almost century long history. The Landau-Peierls photon wave function, which is related nonlocally to the electromagnetic field is first described, and thereafter the so-called energy wave function, based...... on the positive-frequency Riemann-Silberstein vectors, is discussed. Recent attempts to understand the birth process of a photon emerging from a single atom are summarized. The polychromatic photon concept is introduced, and it is indicated how the wave mechanics of polychromatic photons can be upgraded to wave...... in a hyperfine spin transition shows an exponential falloff with the distance from the atomic nucleus. The length parameter in this falloff is the Bohr radius....

  11. Oven controlled N++ [1 0 0] length-extensional mode silicon resonator with frequency stability of 1 ppm over industrial temperature range

    Science.gov (United States)

    You, Weilong; Pei, Binbin; Sun, Ke; Zhang, Lei; Yang, Heng; Li, Xinxin

    2017-10-01

    This paper presents an oven controlled N++ [1 0 0] length-extensional mode silicon resonator, with a lookup-table based control algorithm. The temperature coefficient of resonant frequency (TCF) of the N++ doped resonator is nonlinear, and there is a turnover temperature point at which the TCF is equal to zero. The resonator is maintained at the turnover point by Joule heating; this temperature is a little higher than the upper limit of the industrial temperature range. It is demonstrated that the control algorithm based on the thermoresistor on the substrate and the lookup table for heating voltage versus chip temperature is sufficiently accurate to achieve a frequency stability of  ±0.5 ppm over the industrial temperature range. Because only two leads are required for electrical heating and piezoresistive sensing, the power required for heating of this resonator can be potentially lower than that of the oscillators with closed-loop oven control algorithm. It is also shown that the phase noise can be suppressed at the turnover temperature because of the very low value of the TCF, which justifies the usage of the heating voltage as the excitation voltage of the Wheatstone half-bridge.

  12. Ultra-compact broadband higher order-mode pass filter fabricated in a silicon waveguide for multimode photonics

    DEFF Research Database (Denmark)

    Guan, Xiaowei; Ding, Yunhong; Frandsen, Lars Hagedorn

    2015-01-01

    . Consequently, light on the lower order mode is prohibited to pass through the filter, while light on a higher order mode can be converted to a Bloch mode in the photonic crystal and pass through the filter with low insertion loss. As an example, we fabricate a similar to 15-mu m-long first-order-mode pass...... wavelength range from 1480 to 1580 nm. Additionally, calculations predict the extinction ratio to be larger than 50 dB in a 170 nm broad bandwidth. (C) 2015 Optical Society of America...

  13. Sensitive detection of protein and miRNA cancer biomarkers using silicon-based photonic crystals and a resonance coupling laser scanning platform.

    Science.gov (United States)

    George, Sherine; Chaudhery, Vikram; Lu, Meng; Takagi, Miki; Amro, Nabil; Pokhriyal, Anusha; Tan, Yafang; Ferreira, Placid; Cunningham, Brian T

    2013-10-21

    Enhancement of the fluorescent output of surface-based fluorescence assays by performing them upon nanostructured photonic crystal (PC) surfaces has been demonstrated to increase signal intensities by >8000×. Using the multiplicative effects of optical resonant coupling to the PC in increasing the electric field intensity experienced by fluorescent labels ("enhanced excitation") and the spatially biased funneling of fluorophore emissions through coupling to PC resonances ("enhanced extraction"), PC enhanced fluorescence (PCEF) can be adapted to reduce the limits of detection of disease biomarker assays, and to reduce the size and cost of high sensitivity detection instrumentation. In this work, we demonstrate the first silicon-based PCEF detection platform for multiplexed biomarker assay. The sensor in this platform is a silicon-based PC structure, comprised of a SiO2 grating that is overcoated with a thin film of high refractive index TiO2 and is produced in a semiconductor foundry for low cost, uniform, and reproducible manufacturing. The compact detection instrument that completes this platform was designed to efficiently couple fluorescence excitation from a semiconductor laser to the resonant optical modes of the PC, resulting in elevated electric field strength that is highly concentrated within the region <100 nm from the PC surface. This instrument utilizes a cylindrically focused line to scan a microarray in <1 min. To demonstrate the capabilities of this sensor-detector platform, microspot fluorescent sandwich immunoassays using secondary antibodies labeled with Cy5 for two cancer biomarkers (TNF-α and IL-3) were performed. Biomarkers were detected at concentrations as low as 0.1 pM. In a fluorescent microarray for detection of a breast cancer miRNA biomarker miR-21, the miRNA was detectable at a concentration of 0.6 pM.

  14. Near-Infrared and Optical Beam Steering and Frequency Splitting in Air-Holes-in-Silicon Inverse Photonic Crystals

    Science.gov (United States)

    2017-01-01

    We present the design of a dielectric inverse photonic crystal structure that couples line-defect waveguide propagating modes into highly directional beams of controllable directionality. The structure utilizes a triangular lattice made of air holes drilled in an infinitely thick Si slab, and it is designed for operation in the near-infrared and optical regime. The structure operation is based on the excitation and manipulation of dark dielectric surface states, in particular on the tailoring of the dark states’ coupling to outgoing radiation. This coupling is achieved with the use of properly designed external corrugations. The structure adapts and matches modes that travel through the photonic crystal and the free space. Moreover it facilitates the steering of the outgoing waves, is found to generate well-defined, spatially and spectrally isolated beams, and may serve as a frequency splitting component designed for operation in the near-infrared regime and in particular the telecom optical wavelength band. The design complies with the state-of-the-art Si nanofabrication technology and can be directly scaled for operation in the optical regime. PMID:29541653

  15. Energy transfer phenomena and radiative processes in silicon nitride based materials for on-chip photonics applications

    Science.gov (United States)

    Li, Rui

    Rare-earth (RE) doping of silicon-based structures provides a valuable approach for light-emitting devices which could be monolithically integrated atop the widespread silicon electronics platform and enables inexpensive integration of on-chip optical components. However, the small excitable fraction of RE ions and the substantial free carrier losses in Si nanostructures severely limit the possibility to achieve net optical gain using traditional Er doped materials, such as Er doped Si-rich oxides (Er:SRO). On the other hand, a novel material platform based on RE-doped silicon nitride (RE:Six) materials has recently revealed unique advantages for on-chip light source. Based on a variety of light emission spectroscopic techniques and rate equation modeling, light emission and energy transfer phenomena were studied to quantitatively assess the benefits of the novel Er and Nd doped SiNx (Er: SiN x and Nd:SiNx) material platform compared to the standard Er:SRO. Efficient energy transfer and nanosecond-time dynamics from SiN x matrices to RE ions with two orders of magnitude larger coupling coefficient than Er:SRO were demonstrated for the first time. The origin of this energy transfer was shown to consist of non-resonant phonon-mediated coupling by temperature-dependent experiments. In addition, a tradeoff between excitation efficiency by energy transfer and emission efficiency, determined by excess Si concentration, was discovered and studied. Although carrier absorption and non-radiative recombination jeopardize the observation of optical gain, differential loss measurements under femtosecond pulsed excitation resulted in the bleaching of the Er ground state absorption by energy transfer in Er:SiN x materials, which bears great hope for the engineering of Si-based lasers. On the other hand, with a superior 4-level system, Nd:SiNx is promising to lase with a lower threshold. To make use of the better field confinement in SiNx due to its higher refractive index, RE

  16. A Silicon-Strip Detector for Photon-Counting Spectral CT: Energy Resolution From 40 keV to 120 keV

    Science.gov (United States)

    Liu, Xuejin; Bornefalk, Hans; Chen, Han; Danielsson, Mats; Karlsson, Staffan; Persson, Mats; Xu, Cheng; Huber, Ben

    2014-06-01

    We are developing a segmented silicon-strip detector for spectral computed tomography. The detector operates in photon-counting mode and allows pulse-height discrimination with 8 adjustable energy bins. In this work, we determine the energy resolution of a detector module using monoenergetic x-rays from 40 keV to 120 keV, provided at the European Synchrotron Radiation Facility, Grenoble. For each incident x-ray energy, pulse height spectra at different input photon fluxes are obtained. We investigate changes of the energy resolution due to charge sharing between pixels and pulse pileup. The different incident energies are used to channel-wise calibrate the pulse-height response in terms of signal gain and offset and to probe the homogeneity of the detector module. The detector shows a linear pulse-height response in the energy range from 40 keV to 120 keV. The gain variation among the channels is below 4%, whereas the variation of the offsets is on the order of 1 keV. We find an absolute energy resolution ( σE) that degrades from 1.5 keV to 1.9 keV with increasing x-ray energy from 40 keV to 100 keV. With increasing input count rate, σE degrades by approximately 4 ·10-3 keV Mcps-1 mm2, which is, within error bars, the same for the different energies. The effect of charge sharing on the width of the response peak is found to be negligible.

  17. Improved bandwidth and quantum efficiency in silicon photodiodes using photon-manipulating micro/nanostructures operating in the range of 700-1060 nm

    Science.gov (United States)

    Cansizoglu, Hilal; Gao, Yang; Ghandiparsi, Soroush; Kaya, Ahmet; Perez, Cesar Bartolo; Mayet, Ahmed; Ponizovskaya Devine, Ekaterina; Cansizoglu, Mehmet F.; Yamada, Toshishige; Elrefaie, Aly F.; Wang, Shih-Yuan; Islam, M. Saif

    2017-08-01

    Nanostructures allow broad spectrum and near-unity optical absorption and contributed to high performance low-cost Si photovoltaic devices. However, the efficiency is only a few percent higher than a conventional Si solar cell with thicker absorption layers. For high speed surface illuminated photodiodes, the thickness of the absorption layer is critical for short transit time and RC time. Recently a CMOS-compatible micro/nanohole silicon (Si) photodiode (PD) with more than 20 Gb/s data rate and with 52 % quantum efficiency (QE) at 850 nm was demonstrated. The achieved QE is over 400% higher than a similar Si PD with the same thickness but without absorption enhancement microstructure holes. The micro/nanoholes increases the QE by photon trapping, slow wave effects and generate a collective assemble of modes that radiate laterally, resulting in absorption enhancement and therefore increase in QE. Such Si PDs can be further designed to enhance the bandwidth (BW) of the PDs by reducing the device capacitance with etched holes in the pin junction. Here we present the BW and QE of Si PDs achievable with micro/nanoholes based on a combination of empirical evidence and device modeling. Higher than 50 Gb/s data rate with greater than 40% QE at 850 nm is conceivable in transceivers designed with such Si PDs that are integrated with photon trapping micro and nanostructures. By monolithic integration with CMOS/BiCMOS integrated circuits such as transimpedance amplifiers, equalizers, limiting amplifiers and other application specific integrated circuits (ASIC), the data rate can be increased to more than 50 Gb/s.

  18. Dosimetric properties characterization of silicon diodes used in photon beam radiotherapy; Caracterizacao das propriedades dosimetricas de diodos de silicio empregados em radioterapia com fotons

    Energy Technology Data Exchange (ETDEWEB)

    Bizetto, Cesar Augusto

    2013-07-01

    In the current work it was studied the performance of epitaxial (EPI) and float zone (FZ) silicon diodes as on-line dosimeters for megavoltage (EPI diode) and orthovoltage (EPI and FZ diode) photon beam radiotherapy. In order to be used as dosimeters the diodes were enclosed in black polymethylmethacrylate (PMMA) probes. The devices were then connected, on photovoltaic mode, to an electrometer KeithleyÒ 6517B to allow measurements of the photocurrent. The irradiations were performed with 6 and 18 MV photon beams (Siemens PrimusÒ linear accelerator), 6 and 15 MV (Novalis TXÒ) and 10, 25, 30 and 50 kV of a Pantak / Seifert X ray radiation device. During the measurements with the Siemens PrimusÒ the diodes were held between PMMA plates placed at 10.0 cm depth. When using Novalis TXÒ the devices were held between solid water plates placed at 50 cm depth. In both cases the diodes were centered in a radiation field of 10 x 10 cm{sup 2}, with the source-to-surface distance (SSD) kept at 100 cm. In measurements with orthovoltage photon beams the diodes were placed 50.0 cm from the tube in a radiation field of 8 cm diameter. The dose-rate dependency was studied for 6 and 15 MV (varying the dose-rate from 100 to 600 monitor units per minute) and for the 50 kV beam by varying the current tube from 2 to 20 mA. All devices showed linear response with dose rate and, within uncertainties the charge collected is independent of dose rate. The current signals induced showed good instantaneous repeatability of the diodes, characterized by coefficients of variation of current (CV) smaller than 1.14% (megavoltage beams) and 0.15% for orthovoltage beams and coefficients of variation of charge (CV) smaller than 1.84% (megavoltage beams) and 1.67% (orthovoltage beams). The dose response curves were quite linear with linear correlation coefficients better than 0.9999 for all diodes. (author)

  19. Dosimetric properties characterization of silicon diodes used in photon beam radiotherapy; Caracterizacao das propriedades dosimetricas de diodos de silicio empregados em radioterapia com feixe de fotons

    Energy Technology Data Exchange (ETDEWEB)

    Bizetto, Cesar Augusto

    2013-07-01

    In the current work it was studied the performance of epitaxial (EPI) and float zone (FZ) silicon diodes as on-line dosimeters for megavoltage (EPI diode) and orthovoltage (EPI and FZ diode) photon beam radiotherapy. In order to be used as dosimeters the diodes were enclosed in black polymethylmethacrylate (PMMA) probes. The devices were then connected, on photovoltaic mode, to an electrometer Keithley Registered-Sign 6517B to allow measurements of the photocurrent. The irradiations were performed with 6 and 18 MV photon beams (Siemens Primus Registered-Sign linear accelerator), 6 and 15 MV (Novalis TX Registered-Sign ) and 10, 25, 30 and 50 kV of a Pantak / Seifert X ray radiation device. During the measurements with the Siemens Primus the diodes were held between PMMA plates placed at 10.0 cm depth. When using Novalis TX Registered-Sign the devices were held between solid water plates placed at 50 cm depth. In both cases the diodes were centered in a radiation field of 10 x 10 cm{sup 2}, with the source-to-surface distance (SSD) kept at 100 cm. In measurements with orthovoltage photon beams the diodes were placed 50.0 cm from the tube in a radiation field of 8 cm diameter. The dose-rate dependency was studied for 6 and 15 MV (varying the dose-rate from 100 to 600 monitor units per minute) and for the 50 kV beam by varying the current tube from 2 to 20 mA. All devices showed linear response with dose rate and, within uncertainties the charge collected is independent of dose rate. The current signals induced showed good instantaneous repeatability of the diodes, characterized by coefficients of variation of current (CV) smaller than 1.14% (megavoltage beams) and 0.15% for orthovoltage beams and coefficients of variation of charge (CV) smaller than 1.84% (megavoltage beams) and 1.67% (orthovoltage beams). The dose response curves were quite linear with linear correlation coefficients better than 0.9999 for all diodes. (author)

  20. Advances in silicon nanophotonics

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher; Pu, Minhao

    plasma effect have been tested up to 40 Gbit/s, and hybrid evanescent silicon lasers have been realized both in the form of distributed feed-back lasers and micro-disk lasers. For enhancing the impact of silicon photonics in future ultrafast and energy-efficient all-optical signal processing, e.......g. in high-bit-rate optical communication circuits and networks, it is vital that the nonlinear optical effects of silicon are being strongly enhanced. This can among others be achieved in photonic-crystal slow-light waveguides and in nano-engineered photonic-wires (Fig. 1). In this talk I shall present some......Silicon has long been established as an ideal material for passive integrated optical circuitry due to its high refractive index, with corresponding strong optical confinement ability, and its low-cost CMOS-compatible manufacturability. However, the inversion symmetry of the silicon crystal lattice...

  1. Dynamic Silicon Nanophotonics

    Science.gov (United States)

    2013-07-31

    sensitive to fabrication imperfections and small temperature changes, therefore they are challenging to integrate into high yield mass production ... Cocoa Beach, Florida, September 2012. 15. Ali Wanis Elshaari, “Photon Manipulation in Silicon Nanophotonic Circuits,” Ph.D. Dissertation, Rochester...1.5-micron Light using Silicon Nanocrystals,” 2012 IEEE Avionics, Fiber Optics and Photonics Conference (AVFOP 2012), ThB3, Cocoa Beach, Florida

  2. The electrophotonic silicon biosensor

    Science.gov (United States)

    Juan-Colás, José; Parkin, Alison; Dunn, Katherine E.; Scullion, Mark G.; Krauss, Thomas F.; Johnson, Steven D.

    2016-09-01

    The emergence of personalized and stratified medicine requires label-free, low-cost diagnostic technology capable of monitoring multiple disease biomarkers in parallel. Silicon photonic biosensors combine high-sensitivity analysis with scalable, low-cost manufacturing, but they tend to measure only a single biomarker and provide no information about their (bio)chemical activity. Here we introduce an electrochemical silicon photonic sensor capable of highly sensitive and multiparameter profiling of biomarkers. Our electrophotonic technology consists of microring resonators optimally n-doped to support high Q resonances alongside electrochemical processes in situ. The inclusion of electrochemical control enables site-selective immobilization of different biomolecules on individual microrings within a sensor array. The combination of photonic and electrochemical characterization also provides additional quantitative information and unique insight into chemical reactivity that is unavailable with photonic detection alone. By exploiting both the photonic and the electrical properties of silicon, the sensor opens new modalities for sensing on the microscale.

  3. A novel method for patient exit and entrance dose prediction based on water equivalent path length measured with an amorphous silicon electronic portal imaging device

    International Nuclear Information System (INIS)

    Kavuma, Awusi; Glegg, Martin; Metwaly, Mohamed; Currie, Garry; Elliott, Alex

    2010-01-01

    In vivo dosimetry is one of the quality assurance tools used in radiotherapy to monitor the dose delivered to the patient. Electronic portal imaging device (EPID) images for a set of solid water phantoms of varying thicknesses were acquired and the data fitted onto a quadratic equation, which relates the reduction in photon beam intensity to the attenuation coefficient and material thickness at a reference condition. The quadratic model is used to convert the measured grey scale value into water equivalent path length (EPL) at each pixel for any material imaged by the detector. For any other non-reference conditions, scatter, field size and MU variation effects on the image were corrected by relative measurements using an ionization chamber and an EPID. The 2D EPL is linked to the percentage exit dose table, for different thicknesses and field sizes, thereby converting the plane pixel values at each point into a 2D dose map. The off-axis ratio is corrected using envelope and boundary profiles generated from the treatment planning system (TPS). The method requires field size, monitor unit and source-to-surface distance (SSD) as clinical input parameters to predict the exit dose, which is then used to determine the entrance dose. The measured pixel dose maps were compared with calculated doses from TPS for both entrance and exit depth of phantom. The gamma index at 3% dose difference (DD) and 3 mm distance to agreement (DTA) resulted in an average of 97% passing for the square fields of 5, 10, 15 and 20 cm. The exit dose EPID dose distributions predicted by the algorithm were in better agreement with TPS-calculated doses than phantom entrance dose distributions.

  4. Extraordinary wavelength reduction in terahertz graphene-cladded photonic crystal slabs

    Science.gov (United States)

    Williamson, Ian A. D.; Mousavi, S. Hossein; Wang, Zheng

    2016-01-01

    Photonic crystal slabs have been widely used in nanophotonics for light confinement, dispersion engineering, nonlinearity enhancement, and other unusual effects arising from their structural periodicity. Sub-micron device sizes and mode volumes are routine for silicon-based photonic crystal slabs, however spectrally they are limited to operate in the near infrared. Here, we show that two single-layer graphene sheets allow silicon photonic crystal slabs with submicron periodicity to operate in the terahertz regime, with an extreme 100× wavelength reduction from graphene’s large kinetic inductance. The atomically thin graphene further leads to excellent out-of-plane confinement, and consequently photonic-crystal-slab band structures that closely resemble those of ideal two-dimensional photonic crystals, with broad band gaps even when the slab thickness approaches zero. The overall photonic band structure not only scales with the graphene Fermi level, but more importantly scales to lower frequencies with reduced slab thickness. Just like ideal 2D photonic crystals, graphene-cladded photonic crystal slabs confine light along line defects, forming waveguides with the propagation lengths on the order of tens of lattice constants. The proposed structure opens up the possibility to dramatically reduce the size of terahertz photonic systems by orders of magnitude. PMID:27143314

  5. Extraordinary wavelength reduction in terahertz graphene-cladded photonic crystal slabs.

    Science.gov (United States)

    Williamson, Ian A D; Mousavi, S Hossein; Wang, Zheng

    2016-05-04

    Photonic crystal slabs have been widely used in nanophotonics for light confinement, dispersion engineering, nonlinearity enhancement, and other unusual effects arising from their structural periodicity. Sub-micron device sizes and mode volumes are routine for silicon-based photonic crystal slabs, however spectrally they are limited to operate in the near infrared. Here, we show that two single-layer graphene sheets allow silicon photonic crystal slabs with submicron periodicity to operate in the terahertz regime, with an extreme 100× wavelength reduction from graphene's large kinetic inductance. The atomically thin graphene further leads to excellent out-of-plane confinement, and consequently photonic-crystal-slab band structures that closely resemble those of ideal two-dimensional photonic crystals, with broad band gaps even when the slab thickness approaches zero. The overall photonic band structure not only scales with the graphene Fermi level, but more importantly scales to lower frequencies with reduced slab thickness. Just like ideal 2D photonic crystals, graphene-cladded photonic crystal slabs confine light along line defects, forming waveguides with the propagation lengths on the order of tens of lattice constants. The proposed structure opens up the possibility to dramatically reduce the size of terahertz photonic systems by orders of magnitude.

  6. Fundamental length

    International Nuclear Information System (INIS)

    Pradhan, T.

    1975-01-01

    The concept of fundamental length was first put forward by Heisenberg from purely dimensional reasons. From a study of the observed masses of the elementary particles known at that time, it is sumrised that this length should be of the order of magnitude 1 approximately 10 -13 cm. It was Heisenberg's belief that introduction of such a fundamental length would eliminate the divergence difficulties from relativistic quantum field theory by cutting off the high energy regions of the 'proper fields'. Since the divergence difficulties arise primarily due to infinite number of degrees of freedom, one simple remedy would be the introduction of a principle that limits these degrees of freedom by removing the effectiveness of the waves with a frequency exceeding a certain limit without destroying the relativistic invariance of the theory. The principle can be stated as follows: It is in principle impossible to invent an experiment of any kind that will permit a distintion between the positions of two particles at rest, the distance between which is below a certain limit. A more elegant way of introducing fundamental length into quantum theory is through commutation relations between two position operators. In quantum field theory such as quantum electrodynamics, it can be introduced through the commutation relation between two interpolating photon fields (vector potentials). (K.B.)

  7. CMOS-compatible photonic devices for single-photon generation

    Directory of Open Access Journals (Sweden)

    Xiong Chunle

    2016-09-01

    Full Text Available Sources of single photons are one of the key building blocks for quantum photonic technologies such as quantum secure communication and powerful quantum computing. To bring the proof-of-principle demonstration of these technologies from the laboratory to the real world, complementary metal–oxide–semiconductor (CMOS-compatible photonic chips are highly desirable for photon generation, manipulation, processing and even detection because of their compactness, scalability, robustness, and the potential for integration with electronics. In this paper, we review the development of photonic devices made from materials (e.g., silicon and processes that are compatible with CMOS fabrication facilities for the generation of single photons.

  8. Path-length-resolved measurements of multiple scattered photons in static and dynamic turbid media using phase-modulated low-coherence interferometry

    NARCIS (Netherlands)

    Varghese, Babu; Rajan, Vinayakrishnan; van Leeuwen, Ton G.; Steenbergen, Wiendelt

    2007-01-01

    In optical Doppler measurements, the path length of the light is unknown. To facilitate quantitative measurements, we develop a phase-modulated Mach-Zehnder interferometer with separate fibers for illumination and detection. With this setup, path-length-resolved dynamic light scattering measurements

  9. Topology Optimized Photonic Wire Splitters

    DEFF Research Database (Denmark)

    Frandsen, Lars Hagedorn; Borel, Peter Ingo; Jensen, Jakob Søndergaard

    2006-01-01

    Photonic wire splitters have been designed using topology optimization. The splitters have been fabricated in silicon-on-insulator material and display broadband low-loss 3dB splitting in a bandwidth larger than 100 nm.......Photonic wire splitters have been designed using topology optimization. The splitters have been fabricated in silicon-on-insulator material and display broadband low-loss 3dB splitting in a bandwidth larger than 100 nm....

  10. Silicon Photonics for Space Communications

    Data.gov (United States)

    National Aeronautics and Space Administration — This proposal is aimed to address level two "Optical Communication and Navigation" needs within the "5.0 Communications, Navigation, and Orbital Debris Tracking and...

  11. Imprinted silicon-based nanophotonics

    DEFF Research Database (Denmark)

    Borel, Peter Ingo; Olsen, Brian Bilenberg; Frandsen, Lars Hagedorn

    2007-01-01

    We demonstrate and optically characterize silicon-on-insulator based nanophotonic devices fabricated by nanoimprint lithography. In our demonstration, we have realized ordinary and topology-optimized photonic crystal waveguide structures. The topology-optimized structures require lateral pattern...

  12. Energy transfer in nanowire solar cells with photon-harvesting shells

    KAUST Repository

    Peters, C. H.

    2009-01-01

    The concept of a nanowire solar cell with photon-harvesting shells is presented. In this architecture, organic molecules which absorb strongly in the near infrared where silicon absorbs weakly are coupled to silicon nanowires (SiNWs). This enables an array of 7-μm -long nanowires with a diameter of 50 nm to absorb over 85% of the photons above the bandgap of silicon. The organic molecules are bonded to the surface of the SiNWs forming a thin shell. They absorb the low-energy photons and subsequently transfer the energy to the SiNWs via Förster resonant energy transfer, creating free electrons and holes within the SiNWs. The carriers are then separated at a radial p-n junction in a nanowire and extracted at the respective electrodes. The shortness of the nanowires is expected to lower the dark current due to the decrease in p-n junction surface area, which scales linearly with wire length. The theoretical power conversion efficiency is 15%. To demonstrate this concept, we measure a 60% increase in photocurrent from a planar silicon-on-insulator diode when a 5 nm layer of poly[2-methoxy-5-(2′ -ethyl-hexyloxy)-1,4-phenylene vinylene is applied to the surface of the silicon. This increase is in excellent agreement with theoretical predictions. © 2009 American Institute of Physics.

  13. CERN manufactured hybrid photon detectors

    CERN Multimedia

    Maximilien Brice

    2004-01-01

    These hybrid photon detectors (HPDs) produce an electric signal from a single photon. An electron is liberated from a photocathode and accelerated to a silicon pixel array allowing the location of the photon on the cathode to be recorded. The electronics and optics for these devices have been developed in close collaboration with industry. HPDs have potential for further use in astrophysics and medical imaging.

  14. Nanodiamond Emitters of Single Photons

    Directory of Open Access Journals (Sweden)

    Vlasov I.I.

    2015-01-01

    Full Text Available Luminescence properties of single color centers were studied in nanodiamonds of different origin. It was found that single photon emitters could be realized even in molecularsized diamond (less than 2 nm capable of housing stable luminescent center “silicon-vacancy.” First results on incorporation of single-photon emitters based on luminescent nanodiamonds in plasmonic nanoantennas to enhance the photon count rate and directionality, diminish the fluorescence decay time, and provide polarization selectivity are presented.

  15. Slow light enhanced gas sensing in photonic crystals

    Science.gov (United States)

    Kraeh, Christian; Martinez-Hurtado, J. L.; Popescu, Alexandru; Hedler, Harry; Finley, Jonathan J.

    2018-02-01

    Infrared spectroscopy allows for highly selective and highly sensitive detection of gas species and concentrations. Conventional gas spectrometers are generally large and unsuitable for on-chip applications. Long absorption path lengths are usually required and impose a challenge for miniaturization. In this work, a gas spectrometer is developed consisting of a microtube photonic crystal structure. This structure of millimetric form factors minimizes the required absorption path length due to slow light effects. The microtube photonic crystal allows for strong transmission in the mid-infrared and, due to its large void space fraction, a strong interaction between light and gas molecules. As a result, enhanced absorption of light increases the gas sensitivity of the device. Slow light enhanced gas absorption by a factor of 5.8 in is experimentally demonstrated at 5400 nm. We anticipate small form factor gas sensors on silicon to be a starting point for on-chip gas sensing architectures.

  16. Optical trapping apparatus, methods and applications using photonic crystal resonators

    Science.gov (United States)

    Erickson, David; Chen, Yih-Fan

    2015-06-16

    A plurality of photonic crystal resonator optical trapping apparatuses and a plurality optical trapping methods using the plurality of photonic crystal resonator optical trapping apparatuses include located and formed over a substrate a photonic waveguide that is coupled (i.e., either separately coupled or integrally coupled) with a photonic crystal resonator. In a particular embodiment, the photonic waveguide and the photonic crystal resonator comprise a monocrystalline silicon (or other) photonic material absent any chemical functionalization. In another particular embodiment, the photonic waveguide and the photonic crystal resonator comprise a silicon nitride material which when actuating the photonic crystal resonator optical trapping apparatus with a 1064 nanometer resonant photonic radiation wavelength (or other resonant photonic radiation wavelength in a range from about 700 to about 1200 nanometers) provides no appreciable heating of an aqueous sample fluid that is analyzed by the photonic crystal resonator optical trapping apparatus.

  17. Electrothermal Actuators for SiO2 Photonic MEMS

    Directory of Open Access Journals (Sweden)

    Tjitte-Jelte Peters

    2016-11-01

    Full Text Available This paper describes the design, fabrication and characterization of electrothermal bimorph actuators consisting of polysilicon on top of thick (>10 μ m silicon dioxide beams. This material platform enables the integration of actuators with photonic waveguides, producing mechanically-flexible photonic waveguide structures that are positionable. These structures are explored as part of a novel concept for highly automated, sub-micrometer precision chip-to-chip alignment. In order to prevent residual stress-induced fracturing that is associated with the release of thick oxide structures from a silicon substrate, a special reinforcement method is applied to create suspended silicon dioxide beam structures. The characterization includes measurements of the post-release deformation (i.e., without actuation, as well as the deflection resulting from quasi-static and dynamic actuation. The post-release deformation reveals a curvature, resulting in the free ends of 800 μ m long silicon dioxide beams with 5 μ m-thick polysilicon to be situated approximately 80 μ m above the chip surface. Bimorph actuators that are 800 μ m in length produce an out-of-plane deflection of approximately 11 μ m at 60 mW dissipated power, corresponding to an estimated 240 ∘ C actuator temperature. The delivered actuation force of the 800 μ m-long bimorph actuators having 5 μ m-thick polysilicon is calculated to be approximately 750 μN at 120 mW .

  18. 'Length'at Length

    Indian Academy of Sciences (India)

    Admin

    He was interested to know how `large' is the set of numbers x for which the series is convergent. Here large refers to its length. But his set is not in the class ♢. Here is another problem discussed by Borel. Consider .... have an infinite collection of pairs of new shoes and want to choose one shoe from each pair. We have an ...

  19. Photon-photon collisions

    International Nuclear Information System (INIS)

    Haissinski, J.

    1986-06-01

    The discussions presented in this paper deal with the following points: distinctive features of gamma-gamma collisions; related processes; photon-photon elastic scattering in the continuum and γγ →gg; total cross section; γγ → V 1 V 2 (V=vector meson); radiative width measurements and light meson spectroscopy; exclusive channels at large /t/; jets and inclusive particle distribution in γγ collisions; and, the photon structure function F γ 2

  20. Photon-photon collisions

    International Nuclear Information System (INIS)

    Burke, D.L.

    1982-10-01

    Studies of photon-photon collisions are reviewed with particular emphasis on new results reported to this conference. These include results on light meson spectroscopy and deep inelastic e#betta# scattering. Considerable work has now been accumulated on resonance production by #betta##betta# collisions. Preliminary high statistics studies of the photon structure function F 2 /sup #betta#/(x,Q 2 ) are given and comments are made on the problems that remain to be solved

  1. Photon-photon colliders

    Energy Technology Data Exchange (ETDEWEB)

    Sessler, A.M.

    1995-04-01

    Since the seminal work by Ginsburg, et at., the subject of giving the Next Linear Collider photon-photon capability, as well as electron-positron capability, has drawn much attention. A 1990 article by V.I. Teinov describes the situation at that time. In March 1994, the first workshop on this subject was held. This report briefly reviews the physics that can be achieved through the photon-photon channel and then focuses on the means of achieving such a collider. Also reviewed is the spectrum of backscattered Compton photons -- the best way of obtaining photons. We emphasize the spectrum actually obtained in a collider with both polarized electrons and photons (peaked at high energy and very different from a Compton spectrum). Luminosity is estimated for the presently considered colliders, and interaction and conversion-point geometries are described. Also specified are laser requirements (such as wavelength, peak power, and average power) and the lasers that might be employed. These include conventional and free-electron lasers. Finally, we describe the R&D necessary to make either of these approaches viable and explore the use of the SLC as a test bed for a photon-photon collider of very high energy.

  2. Reduced length design of 9.8 MHz RF accelerating cavity for the positron accumulator ring (PAR) of the Advanced Photon Source (APS)

    Energy Technology Data Exchange (ETDEWEB)

    Kang, Y.W.; Bridges, J.F.; Kustom, R.L.

    1993-07-01

    A 9.8-MHz RF accelerating cavity is developed for the first harmonic system in the APS PAR and an aluminum unit is tested. The design goal si 40 kV at the accelerating gap, Q-factor of {approximately} 7,000 for the accelerating mode, 1.2-m diameter, 1.6-m length with good mechanical strength and stability. The design employs no dielectric or ferrite loading for tuning. The cavity is a plunger-loaded reentrant coaxial structure; the end of the inner conductor facing the wall has a piston-shaped loading structure which consists of a circular disk and a cylinder. The RF characteristic of the cavity was investigated using the URMEL-T and MAFIA programs. Compared with a coaxial structure with lumped element capacitive loading, this design gives improved RF characteristics.

  3. Photon-photon collisions

    Energy Technology Data Exchange (ETDEWEB)

    Brodsky, S.J.

    1988-07-01

    Highlights of the VIIIth International Workshop on Photon-Photon Collisions are reviewed. New experimental and theoretical results were reported in virtually every area of ..gamma gamma.. physics, particularly in exotic resonance production and tests of quantum chromodynamics where asymptotic freedom and factorization theorems provide predictions for both inclusive and exclusive ..gamma gamma.. reactions at high momentum transfer. 73 refs., 12 figs.

  4. VCSEL Scaling, Laser Integration on Silicon, and Bit Energy

    Science.gov (United States)

    2017-03-01

    Silicon Photonics: Figure 1 shows the electronic circuitry and comparison key to analyzing photonic bit energies for transceivers used in data centers...VCSEL Scaling, Laser Integration on Silicon , and Bit Energy D.G. Deppe,1,2 Ja. Leshin,1 and Je. Leshin1 1CREOL, College of Optics & Photonics...laser; (000.0000) General [For codes, see www.opticsinfobase.org/submit/ocis.] Keywords: VCSELs, Nanoscale lasers, optical interconnects, silicon

  5. Photonic band gap engineering in 2D photonic crystals

    Indian Academy of Sciences (India)

    (i) PhC composed of square lattice of elliptical air holes in silicon (Si) (n = 3.42) as shown in figure 1a. (ii) PhC ... consist of silicon and air as they provide adequate dielectric contrast for obtaining photonic band gaps. ... periodic with lattice vectors R. The relative permeability µ is taken as 1 and the relative permittivity is ...

  6. Narrow bandpass tunable terahertz filter based on photonic crystal cavity.

    Science.gov (United States)

    He, Jinglong; Liu, Pingan; He, Yalan; Hong, Zhi

    2012-02-20

    We have fabricated a very narrow bandpass tunable terahertz (THz) filter based on a one-dimensional photonic crystal cavity. Since the filter consists of silicon wafers and air spacers, it has a very high quality factor of about 1500. The full width at half maximum (FWHM) of the passband is only about 200 MHz, and the peak transmission is higher than -4 dB. Besides, the central frequency can be tuned rapidly over the entire bandgap with the length of cavity adjusted by a motorized linear stage. Further analytical calculations indicate that a high-Q tunable filter with both high peak transmission and wide tunable range is possible if thinner silicon layers are used. © 2012 Optical Society of America

  7. Silicone metalization

    Energy Technology Data Exchange (ETDEWEB)

    Maghribi, Mariam N. (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA)

    2008-12-09

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  8. Photon-photon collisions

    International Nuclear Information System (INIS)

    Field, J.H.

    1984-01-01

    The current status, both theoretical and experimental, of two photon collision physics is reviewed with special emphasis on recent experimental results from e + e - storage rings. After a complete presentation of the helicity amplitude formalism for the general process e + e - → Xe + e - , various approximations (transverse photon, Weisaecker Williams) are discussed. Beam polarisation effects and radiative corrections are also briefly considered. A number of specific processes, for which experimental results are now available, are then described. In each case existing theoretical prediction are confronted with experimental results. The processes described include single resonance production, lepton and hadron pair production, the structure functions of the photon, the production of high Psub(T) jets and the total photon photon cross section. In the last part of the review the current status of the subject is summarised and some comments are made on future prospects. These include both extrapolations of current research to higher energy machines (LEP, HERA) as well as a brief mention of both the technical realisation and the physics interest of the real γγ and eγ collisions which may be possible using linear electron colliders in the 1 TeV energy range

  9. Photon-photon collisions

    Energy Technology Data Exchange (ETDEWEB)

    Brodsky, S.J.

    1985-01-01

    The study of photon-photon collisions has progressed enormously, stimulated by new data and new calculational tools for QCD. In the future we can expect precise determinations of ..cap alpha../sub s/ and ..lambda../sup ms/ from the ..gamma..*..gamma.. ..-->.. ..pi../sup 0/ form factor and the photon structure function, as well as detailed checks of QCD, determination of the shape of the hadron distribution amplitudes from ..gamma gamma.. ..-->.. H anti H, reconstruction of sigma/sub ..gamma gamma../ from exclusive channels at low W/sub ..gamma gamma../, definitive studies of high p/sub T/ hadron and jet production, and studies of threshold production of charmed systems. Photon-photon collisions, along with radiative decays of the psi and UPSILON, are ideal for the study of multiquark and gluonic resonances. We have emphasized the potential for resonance formation near threshold in virtually every hadronic exclusive channel, including heavy quark states c anti c c anti c, c anti c u anti u, etc. At higher energies SLC, LEP, ...) parity-violating electroweak effects and Higgs production due to equivalent Z/sup 0/ and W/sup + -/ beams from e ..-->.. eZ/sup 0/ and e ..-->.. nu W will become important. 44 references.

  10. Photon-photon collisions

    International Nuclear Information System (INIS)

    Brodsky, S.J.

    1985-01-01

    The study of photon-photon collisions has progressed enormously, stimulated by new data and new calculational tools for QCD. In the future we can expect precise determinations of α/sub s/ and Λ/sup ms/ from the γ*γ → π 0 form factor and the photon structure function, as well as detailed checks of QCD, determination of the shape of the hadron distribution amplitudes from γγ → H anti H, reconstruction of sigma/sub γγ/ from exclusive channels at low W/sub γγ/, definitive studies of high p/sub T/ hadron and jet production, and studies of threshold production of charmed systems. Photon-photon collisions, along with radiative decays of the psi and UPSILON, are ideal for the study of multiquark and gluonic resonances. We have emphasized the potential for resonance formation near threshold in virtually every hadronic exclusive channel, including heavy quark states c anti c c anti c, c anti c u anti u, etc. At higher energies SLC, LEP, ...) parity-violating electroweak effects and Higgs production due to equivalent Z 0 and W +- beams from e → eZ 0 and e → nu W will become important. 44 references

  11. Calculation of exit dose for conformal and dynamically‐wedged fields, based on water‐equivalent path length measured with an amorphous silicon electronic portal imaging device

    Science.gov (United States)

    Glegg, Martin; Metwaly, Mohamed; Currie, Garry; Elliott, Alex

    2011-01-01

    In this study, we use the quadratic calibration method (QCM), in which an EPID image is converted into a matrix of equivalent path lengths (EPLs) and, therefore, exit doses, so as to model doses in conformal and enhanced dynamic wedge (EDW) fields. The QCM involves acquiring series of EPID images at a reference field size for different thicknesses of homogeneous solid water blocks. From these, a set of coefficients is established that is used to compute the EPL of any other irradiated material. To determine the EPL, the irradiated area must be known in order to establish the appropriate scatter correction. A method was devised for the automatic calculation of areas from the EPID image that facilitated the calculation of EPL for any field and exit dose. For EDW fields, the fitting coefficients were modified by utilizing the linac manufacturer's golden segmented treatment tables (GSTT) methodology and MU fraction model. The nonlinear response of the EPL with lower monitor units (MUs) was investigated and slight modification of the algorithm performed to account for this. The method permits 2D dose distributions at the exit of phantom or patient to be generated by relating the EPL with an appropriate depth dose table. The results indicate that the inclusion of MU correction improved the EPL determination. The irradiated field areas can be accurately determined from EPID images to within ± 1% uncertainty. Cross‐plane profiles and 2D dose distributions of EPID predicted doses were compared with those calculated with the Eclipse treatment planning system (TPS) and those measured directly with MapCHECK 2 device. Comparison of the 2D EPID dose maps to those from TPS and MapCHECK shows that more than 90% of all points passed the gamma index acceptance criteria of 3% dose difference and 3 mm distance to agreement (DTA), for both conformal and EDW study cases. We conclude that the EPID QCM is an accurate and convenient method for in vivo dosimetry and may, therefore

  12. Ultra-short silicon MMI duplexer

    Science.gov (United States)

    Yi, Huaxiang; Huang, Yawen; Wang, Xingjun; Zhou, Zhiping

    2012-11-01

    The fiber-to-the-home (FTTH) systems are growing fast these days, where two different wavelengths are used for upstream and downstream traffic, typically 1310nm and 1490nm. The duplexers are the key elements to separate these wavelengths into different path in central offices (CO) and optical network unit (ONU) in passive optical network (PON). Multimode interference (MMI) has some benefits to be a duplexer including large fabrication tolerance, low-temperature dependence, and low-polarization dependence, but its size is too large to integrate in conventional case. Based on the silicon photonics platform, ultra-short silicon MMI duplexer was demonstrated to separate the 1310nm and 1490nm lights. By studying the theory of self-image phenomena in MMI, the first order images are adopted in order to keep the device short. A cascaded MMI structure was investigated to implement the wavelength splitting, where both the light of 1310nm and 1490nm was input from the same port, and the 1490nm light was coupling cross the first MMI and output at the cross-port in the device while the 1310nm light was coupling through the first and second MMI and output at the bar-port in the device. The experiment was carried on with the SOI wafer of 340nm top silicon. The cascaded MMI was investigated to fold the length of the duplexer as short as 117μm with the extinct ratio over 10dB.

  13. Modelling and design of complete photonic band gaps in two ...

    Indian Academy of Sciences (India)

    Photonic crystal; complete photonic band gap; plane-wave expansion method. PACS Nos 71.20; 42.70.Q. 1. Introduction. Photonic band gap structures/photonic crystals, especially two-dimensional (2D) photonic crystals, which are dielectric structures periodic on length scale, have recently achieved much attention, as they ...

  14. CONFERENCE: Photon-photon collisions

    International Nuclear Information System (INIS)

    Anon.

    1983-01-01

    Despite being difficult to observe, photon-photon collisions have opened up a range of physics difficult, or even impossible, to access by other methods. The progress which has been made in this field was evident at the fifth international workshop on photon-photon collisions, held in Aachen from 13-16 April and attended by some 120 physicists

  15. Integrated Visible Photonics for Trapped-Ion Quantum Computing

    Science.gov (United States)

    2017-06-10

    capability to optically address individual ions at several wavelengths. We demonstrate a dual-layered silicon nitride photonic platform for integration...1]. Integrated photonics in the visible and near IR provides a scalable platform in which the optical beams can be routed beneath a planar ion...trap array and directed out-of-plane to address the ions of interest. Silicon-nitride photonic integrated circuits (PICs) offer an appealing system

  16. Silicon microphotonic waveguides

    International Nuclear Information System (INIS)

    Ta'eed, V.; Steel, M.J.; Grillet, C.; Eggleton, B.; Du, J.; Glasscock, J.; Savvides, N.

    2004-01-01

    Full text: Silicon microphotonic devices have been drawing increasing attention in the past few years. The high index-difference between silicon and its oxide (Δn = 2) suggests a potential for high-density integration of optical functions on to a photonic chip. Additionally, it has been shown that silicon exhibits strong Raman nonlinearity, a necessary property as light interaction can occur only by means of nonlinearities in the propagation medium. The small dimensions of silicon waveguides require the design of efficient tapers to couple light to them. We have used the beam propagation method (RSoft BeamPROP) to understand the principles and design of an inverse-taper mode-converter as implemented in several recent papers. We report on progress in the design and fabrication of silicon-based waveguides. Preliminary work has been conducted by patterning silicon-on-insulator (SOI) wafers using optical lithography and reactive ion etching. Thus far, only rib waveguides have been designed, as single-mode ridge-waveguides are beyond the capabilities of conventional optical lithography. We have recently moved to electron beam lithography as the higher resolutions permitted will provide the flexibility to begin fabricating sub-micron waveguides

  17. Photon technology. Hard photon technology; Photon technology. Hard photon gijutsu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1996-03-01

    Research results of hard photon technology have been summarized as a part of novel technology development highly utilizing the quantum nature of photon. Hard photon technology refers to photon beam technologies which use photon in the 0.1 to 200 nm wavelength region. Hard photon has not been used in industry due to the lack of suitable photon sources and optical devices. However, hard photon in this wavelength region is expected to bring about innovations in such areas as ultrafine processing and material synthesis due to its atom selective reaction, inner shell excitation reaction, and spatially high resolution. Then, technological themes and possibility have been surveyed. Although there are principle proposes and their verification of individual technologies for the technologies of hard photon generation, regulation and utilization, they are still far from the practical applications. For the photon source technology, the laser diode pumped driver laser technology, laser plasma photon source technology, synchrotron radiation photon source technology, and vacuum ultraviolet photon source technology are presented. For the optical device technology, the multi-layer film technology for beam mirrors and the non-spherical lens processing technology are introduced. Also are described the reduction lithography technology, hard photon excitation process, and methods of analysis and measurement. 430 refs., 165 figs., 23 tabs.

  18. Broadband Nonlinear Signal Processing in Silicon Nanowires

    DEFF Research Database (Denmark)

    Yvind, Kresten; Pu, Minhao; Hvam, Jørn Märcher

    The fast non-linearity of silicon allows Tbit/s optical signal processing. By choosing suitable dimensions of silicon nanowires their dispersion can be tailored to ensure a high nonlinearity at power levels low enough to avoid significant two-photon abso We have fabricated low insertion...

  19. Emission Spectral Control of a Silicon Light Emitting Diode Fabricated by Dressed-Photon-Phonon Assisted Annealing Using a Short Pulse Pair

    Directory of Open Access Journals (Sweden)

    Tadashi Kawazoe

    2014-01-01

    Full Text Available We fabricated a high-efficiency infrared light emitting diode (LED via dressed-photon-phonon (DPP assisted annealing of a p-n homojunctioned bulk Si crystal. The center wavelength in the electroluminescence (EL spectrum of this LED was determined by the wavelength of a CW laser used in the DPP-assisted annealing. We have proposed a novel method of controlling the EL spectral shape by additionally using a pulsed light source in order to control the number of phonons for the DPP-assisted annealing. In this method, the Si crystal is irradiated with a pair of pulses having an arrival time difference between them. The number of coherent phonons created is increased (reduced by tuning (detuning this time difference. A Si-LED was subjected to DPP-assisted annealing using a 1.3 μm (hν=0.94 eV CW laser and a mode-locked pulsed laser with a pulse width of 17 fs. When the number of phonons was increased, the EL emission spectrum broadened toward the high-energy side by 200 meV or more. The broadening towards the low-energy side was reduced to 120 meV.

  20. Primary photon fluence extraction from portal images acquired with an amorphous silicon flat panel detector: experimental determination of a scatter filter.

    Science.gov (United States)

    D'Andrea, M; Laccarino, G; Carpino, S; Strigari, L; Benassi, M

    2007-03-01

    When dose delivery to the patient is evaluated by extracting the primary photon fluence impinging on a portal imaging device, scattered radiation from the patient acts as noise. Our aim in the present study is to establish and test a procedure to filter out scatter radiations from portal images by experimental determination of a scatter filtering function. We performed a dose calibration of the Varian (Varian Medical Systems, Palo Alto, CA) aS500 electronic portal imaging device in routine use in our institution. We then analyzed the collected data and extracted the scatter filtering function by applying a simple scatter model with the aid of home-made software. To check the reliability of our calculations we compared central axis dose values in a PMMA phantom computed using the extracted primary fluence with those obtained from experimental TMR(0) tabulated values obtaining a agreement within about 3%. We finally performed a check of dose delivery repeatability by calculating the dose delivered to the EPID during portal image acquisition for patient positioning. Delivered dose per MU fluctuations were within 5% over a set of images acquired during routine use with no prior application of any procedure aimed at optimizing dosimetric repeatability.

  1. Reconfigurable topological photonic crystal

    Science.gov (United States)

    Shalaev, Mikhail I.; Desnavi, Sameerah; Walasik, Wiktor; Litchinitser, Natalia M.

    2018-02-01

    Topological insulators are materials that conduct on the surface and insulate in their interior due to non-trivial topology of the band structure. The edge states on the interface between topological (non-trivial) and conventional (trivial) insulators are topologically protected from scattering due to structural defects and disorders. Recently, it was shown that photonic crystals (PCs) can serve as a platform for realizing a scatter-free propagation of light waves. In conventional PCs, imperfections, structural disorders, and surface roughness lead to significant losses. The breakthrough in overcoming these problems is likely to come from the synergy of the topological PCs and silicon-based photonics technology that enables high integration density, lossless propagation, and immunity to fabrication imperfections. For many applications, reconfigurability and capability to control the propagation of these non-trivial photonic edge states is essential. One way to facilitate such dynamic control is to use liquid crystals (LCs), which allow to modify the refractive index with external electric field. Here, we demonstrate dynamic control of topological edge states by modifying the refractive index of a LC background medium. Background index is changed depending on the orientation of a LC, while preserving the topology of the system. This results in a change of the spectral position of the photonic bandgap and the topological edge states. The proposed concept might be implemented using conventional semiconductor technology, and can be used for robust energy transport in integrated photonic devices, all-optical circuity, and optical communication systems.

  2. Analytical modeling of mid-infrared silicon Raman lasers

    Science.gov (United States)

    Ma, J.; Fathpour, S.

    2012-01-01

    Silicon photonics has significantly matured in the near-infrared (telecommunication) wavelength range with several commercial products already in the market. More recently, the technology has been extended into the mid-infrared (mid- IR) regime with potential applications in biochemical sensing, tissue photoablation, environmental monitoring and freespace communications. The key advantage of silicon in the mid-IR, as compared with near-IR, is the absence of twophoton absorption (TPA) and free-carrier absorption (FCA). The absence of these nonlinear losses would potentially lead to high-performance nonlinear devices based on Raman and Kerr effects. Also, with the absence of TPA and FCA, the coupled-wave equations that are usually numerically solved to model these nonlinear devices lend themselves to analytical solutions in the mid-IR. In this paper, an analytical model for mid-IR silicon Raman lasers is developed. The validity of the model is confirmed by comparing it with numerical solutions of the coupled-wave equations. The developed model can be used as a versatile and efficient tool for analysis, design and optimization of mid-IR silicon Raman lasers, or to find good initial guesses for numerical methods. The effects of cavity parameters, such as cavity length and facet reflectivities, on the lasing threshold and input-output characteristics of the Raman laser are studied. For instance, for a propagation loss of 0.5 dB/cm, conversion efficiencies as high as 56% is predicted. The predicted optimum cavity (waveguide) length at 2.0 dB/cm propagation loss is { 3.4 mm. The results of this study predict strong prospects for mid-IR silicon Raman lasers for the mentioned applications.

  3. Fundamental length and relativistic length

    International Nuclear Information System (INIS)

    Strel'tsov, V.N.

    1988-01-01

    It si noted that the introduction of fundamental length contradicts the conventional representations concerning the contraction of the longitudinal size of fast-moving objects. The use of the concept of relativistic length and the following ''elongation formula'' permits one to solve this problem

  4. Ultrashort hybrid plasmonic transverse electric pass polarizer for silicon-on-insulator platform

    Science.gov (United States)

    Hameed, Mohamed Farhat O.; Zaghloul, Reham; Azzam, Shaimaa I.; Obayya, Salah S. A.

    2017-01-01

    A design of a transverse electric (TE)-pass polarizer based on hybrid plasmonic silicon-on-insulator (SOI) platform is reported and analyzed using full vectorial finite element method. The proposed design has gold nanorods that are injected into the silicon dioxide substrate to tolerate the function of the device, and hence the required polarizing state can be obtained. Detailed design principle is presented, taking advantage of the distinct confinements of the TE and transverse magnetic modes in the core region and their coupling with the surface plasmon modes around the metallic nanorods. According to the positions of the gold nanorods, the suggested plasmonic SOI can be used as a TE-pass polarizer with a compact device length of 1.85 μm with 0.1639 dB insertion losses and extinction ratio of 14.58 dB at wavelength of 1.55 μm. The optimized geometrical parameters offer 3 orders of magnitude smaller than similar devices previously demonstrated on the SOI platform. The proposed design has advantages in terms of simplicity and compactness, which makes it a good candidate to be used in integrated silicon photonics. Further, the compact device size and good performance could provide a simple yet satisfactory solution to the polarization-dependent performance drawback of the silicon photonics devices on the SOI platform.

  5. Flame Length

    Data.gov (United States)

    Earth Data Analysis Center, University of New Mexico — Flame length was modeled using FlamMap, an interagency fire behavior mapping and analysis program that computes potential fire behavior characteristics. The tool...

  6. Second harmonic generation in gallium phosphide microdisks on silicon: from strict \\bar{4} to random quasi-phase matching

    Science.gov (United States)

    Guillemé, P.; Dumeige, Y.; Stodolna, J.; Vallet, M.; Rohel, T.; Létoublon, A.; Cornet, C.; Ponchet, A.; Durand, O.; Léger, Y.

    2017-06-01

    The convergence of nonlinear optical devices and silicon photonics is a key milestone for the practical development of photonic integrated circuits. The associated technological issues often stem from material incompatibility. This is the case of second order nonlinear processes in monolithically integrated III-V semiconductor devices on silicon, where structural defects called antiphase domains strongly impact the optical properties of the material. We theoretically investigate the influence of antiphase domains on second harmonic generation in III-V whispering gallery mode microresonators on silicon and focus on the effects of the antiphase domains’ mean size (i.e. the correlation length of the distribution). We demonstrate that the domain distributions can have opposite effects depending on the nonlinear process under consideration: while antiphase domains negatively impact second harmonic generation under \\bar{4} quasi-phase matching conditions (independent of the correlation length), large conversion efficiencies can arise far from \\bar{4}-quasi-phase matching provided that the APD correlation length remains within an appropriate range, and is still compatible with the spontaneous emergence of such defects in the usual III-V on Si epilayers. Such a build-up can be explained by the occurrence of random quasi-phase matching in the system.

  7. Photonic Hypercrystals

    Directory of Open Access Journals (Sweden)

    Evgenii E. Narimanov

    2014-10-01

    Full Text Available We introduce a new “universality class” of artificial optical media—photonic hypercrystals. These hyperbolic metamaterials, with periodic spatial variation of dielectric permittivity on subwavelength scale, combine the features of optical metamaterials and photonic crystals. In particular, surface waves supported by a hypercrystal possess the properties of both the optical Tamm states in photonic crystals and surface-plasmon polaritons at the metal-dielectric interface.

  8. Microwave photonics

    CERN Document Server

    Lee, Chi H

    2006-01-01

    Wireless, optical, and electronic networks continue to converge, prompting heavy research into the interface between microwave electronics, ultrafast optics, and photonic technologies. New developments arrive nearly as fast as the photons under investigation, and their commercial impact depends on the ability to stay abreast of new findings, techniques, and technologies. Presenting a broad yet in-depth survey, Microwave Photonics examines the major advances that are affecting new applications in this rapidly expanding field.This book reviews important achievements made in microwave photonics o

  9. Study of a positron source generated by photons from ultrarelativistic channeled particles

    International Nuclear Information System (INIS)

    Chehab, R.; Couchot, F.; Nyaiesh, A.R.; Richard, F.; Artru, X.

    1989-03-01

    Radiation by channeled electrons in Germanium and Silicon crystals along the axis is studied as a very promising photon source of small angular divergence for positron generation in amorphous targets. Radiation rates for different crystal lengths - from some tenths of mm to 10 mm - and two electron incident energies, 5 and 20 GeV, are considered and a comparison between the two crystals is presented. Thermic behaviour of the crystal under incidence of bunches of 10 10 electrons is also examined. The corresponding positron yields for tungsten amorphous converters - of 0.5 and 1 X o thickness - are calculated considering the case of a Germanium photon generator. Assuming a large acceptance optical matching system as the adiabatic device of the SLC, accepted positrons are evaluated and positron yields larger than 1 e + /e - are obtained

  10. Electrically controlled broadband liquid crystal photonic bandgap fiber polarimeter

    DEFF Research Database (Denmark)

    Alkeskjold, Thomas Tanggaard; Bjarklev, Anders Overgaard

    2007-01-01

    We demonstrate a liquid crystal photonic bandgap fiber based polarizer integrated in a double silicon v-groove assembly. The polarizer axis can be electrically controlled as well as switched on and off.......We demonstrate a liquid crystal photonic bandgap fiber based polarizer integrated in a double silicon v-groove assembly. The polarizer axis can be electrically controlled as well as switched on and off....

  11. Controlling Anderson localization in disordered photonic crystal waveguides

    DEFF Research Database (Denmark)

    Smolka, Stephan; Garcia, Pedro D.; Lodahl, Peter

    2010-01-01

    We prove Anderson localization in the slow-light regime of a photonic crystal waveguide by measuring the ensemble-averaged localization length which is controlled by the dispersion of the disordered photonic crystal waveguide.......We prove Anderson localization in the slow-light regime of a photonic crystal waveguide by measuring the ensemble-averaged localization length which is controlled by the dispersion of the disordered photonic crystal waveguide....

  12. An 8-channel wavelength demultiplexer based on photonic crystal fiber

    Science.gov (United States)

    Malka, Dror

    2017-05-01

    We propose a novel 8-channel wavelength demultiplexer based on photonic crystal fiber (PCF) structures that operate at 1530nm, 1535nm, 1540nm, 1545nm, 1550nm, 1555nm, 1560nm and 1565nm wavelengths. The new design is based on replacing some air-holes zones with silicon nitride and lithium niobate materials along the PCF axis with optimization of the PCF size. The reason of using these materials is because that each wavelength has a different value of coupling length. Numerical investigations were carried out on the geometrical parameters by using a beam propagation method (BPM). Simulation results show that the proposed device can transmit 8-channel that works in the whole C-band (1530- 1565nm) with low crosstalk ((-16.88)-(-15.93) dB) and bandwidth (4.02-4.69nm). Thus, the device can be very useful in optical networking systems that work on dense wavelength division multiplexing (DWDM) technology.

  13. Silicon Micromachining in RF and Photonic Applications

    Science.gov (United States)

    Lin, Tsen-Hwang; Congdon, Phil; Magel, Gregory; Pang, Lily; Goldsmith, Chuck; Randall, John; Ho, Nguyen

    1995-01-01

    Texas Instruments (TI) has developed membrane and micromirror devices since the late 1970s. An eggcrate space membrane was used as the spatial light modulator in the early years. Discrete micromirrors supported by cantilever beams created a new era for micromirror devices. Torsional micromirror and flexure-beam micromirror devices were promising for mass production because of their stable supports. TI's digital torsional micromirror device is an amplitude modulator (known as the digital micromirror device (DMD) and is in production development, discussed elsewhere. We also use a torsional device for a 4 x 4 fiber-optic crossbar switch in a 2 cm x 2 cm package. The flexure-beam micromirror device is an analog phase modulator and is considered more efficient than amplitude modulators for use in optical processing systems. TI also developed millimeter-sized membranes for integrated optical switches for telecommunication and network applications. Using a member in radio frequency (RF) switch applications is a rapidly growing area because of the micromechanical device performance in microsecond-switching characteristics. Our preliminary membrane RF switch test structure results indicate promising speed and RF switching performance. TI collaborated with MIT for modeling of metal-based micromachining.

  14. Photon manipulation in silicon nanophotonic circuits

    Science.gov (United States)

    Elshaari, Ali Wanis

    2011-12-01

    CD8+ T cells are the branch of the adaptive immune system responsible for recognizing and killing tumor cells or cells infected with intracellular pathogens, such as Listeria monocytogenes (LM). However, when CD8+ T cells target our own tissues, they can cause autoimmune diseases, such as type I diabetes, rheumatoid arthritis. For CD8+ T cells to fulfill these functions, the T cell receptors (TCRs) on CD8+ T cells must recognize pathogens or antigens presented on the surface of target cells. TCR ligation triggers multiple signaling pathways that lead to the activation and proliferation of CD8+ T cells. The goal of our research is to define the TCR-proximal signaling events that regulate CD8+ T cell-mediated immunity. To accomplish this goal, we are focusing on an adaptor protein Gads, which is critical for optimal TCR-mediated calcium mobilization. We reported the first analysis of the function of Gads in peripheral naive CD8+ T cells. To examine the function of Gads in CD8+ T cell mediated immune responses, we crossed Gads-/- mice with mice expressing an MHC class I-restricted transgenic TCR recognizing ovalbumin (OVA). The transgenic mice are called ovalbumin-specific T cell receptor-major histocompatibility complex class I restricted (OT-I) mice. We investigated the effect of Gads on the proliferation of CD8+ T cells following stimulation with peptide antigen in vivo and in vitro. We stimulated splenocytes from Gads+/+ OT-I and Gads -/- OT-I mice with the peptide agonist. The experiments revealed that Gads is required for optimal proliferation of CD8+ T cells. The regulation of Gads is most evident at the early time points of proliferation. Then we demonstrated that Gads-/- CD8+ T cells have impaired TCR-mediated exit from G0 phase of the cell cycle. In addition, Gads-/- CD8+ T cells have delayed expression of c-myc and the activation markers CD69 and CD25, upon stimulation with peptide antigen. Next, we investigated how Gads affects CD8+ T cell-mediated immunity in the context of infection with LM. We adoptively transferred naive CD8+ T cells from Gads+/+ OT-I mice and/or Gads -/- OT-I mice into congenic wild-type hosts. Then the recipient mice were infected with recombinant LM expressing ovalbumin (rLM-OVA). The CD8 + T cells from OT-I mice recognize and respond to the ovalbumin provided by this strain of LM. By using this system, we investigated how Gads regulates the activation of antigen-specific CD8+ T cells as well as the expansion and memory phases of CD8+ T cell-mediated immune responses following infection with rLM-OVA. We also examined the recall response of CD8+ T cells after the secondary encounter with the same pathogen. Our data demonstrated that Gads regulates the expression of activation markers CD69 and CD25 of antigen-specific CD8+ T cells but Gads is not required for the onset of accumulation of antigen-specific CD8 + T cells following infection. However, Gads is critical to sustain the expansion of CD8+ T cell-mediated immune response following infection. Although the differentiation of naive CD8+ T cells into memory cells is independent of Gads, Gads is required for an optimal recall response. Our data indicating that Gads regulates the initiation of proliferation of CD8+ T cells upon TCR ligation by peptide antigen seemed to contradict with our in vivo infection data showing that Gads is not required for the initiation of expansion of CD8+ T cell population. In order to explain the "discrepancy", we hypothesized that the homotypic interactions among CD8+ T cells compensate for Gads deficiency at the initial stage of accumulation of antigen-specific CD8+ T cells upon infection. Our data indicated that the need for Gads in cell cycle progression of CD8+ T cells when total splenocytes were stimulated could be overcome by stimulating purified CD8 + T cells. These data suggested that the homotypic interactions among CD8+ T cells facilitate the TCR signaling so as to compensate for Gads deficiency in promoting cell cycle entry and proliferation. To conclude, the role of Gads in TCR-mediated activation and proliferation of CD8+ T cells is dependent on the interactions of CD8 + T cells and their partners. Interestingly, if CD8+ T cells interact with non-CD8+ T cells, Gads regulates the kinetics of cell cycle entry; however, if CD8+ T cells interact with other CD8+ T cells, Gads is dispensable for cell cycle entry of CD8+ T cells. Overall, these studies will help us better understand how TCR-proximal signaling regulates the activation of CD8 + T cells.

  15. Photon management with luminescent materials and photonic structures

    Science.gov (United States)

    Goldschmidt, J. C.; Fischer, S.; Fröhlich, Benjamin; Gutmann, J.; Herter, B.; Hofmann, C.; Löffler, J.; van Veggel, Frank C. J. M.; Wolf, S.

    2014-05-01

    Upconversion of sub-band-gap photons is a promising approach to increase the efficiency of solar cells. In this paper, we review the recent progress in upconverter material development and realization of efficient upconverter silicon solar cell devices. Current published record values for the increase in the short-circuit current density due to upconversion are 13.1 mA/cm2 at a solar concentration of 210 suns determined in a sun simulator measurement. This increase is equivalent to a relative efficiency enhancement of 0.19% for the silicon solar cell. Although this is a considerable enhancement by more than one order of magnitude from values published only a few years ago, further enhancement of the upconversion performance is necessary. To this end, we investigate theoretically the application of resonant cavity and grating photonic structures. Our simulation based analysis considers irradiance enhancement and modified density of photon states due to the photonic structures and their impact on the upconversion dynamics in β-NaYF4: 20%Er3+. It shows that an optimized grating can increase upconversion luminescence by a factor of 3 averaged over the whole structure in comparison to an unstructured reference with the same amount of upconverter material.

  16. Single-photon detector operating under extremely high background photon flux conditions

    International Nuclear Information System (INIS)

    Prochazka, Ivan; Sopko, Bruno; Blazej, Josef

    2009-01-01

    We are reporting our results in research and development in the field of avalanche semiconductor single-photon detectors and their application. Our goal was a development of a solid-state photon-counting detector capable of high-precision photon arrival time tagging in extremely harsh operating conditions. The background photon flux exceeding 10 9 photons per second hitting the detector active area should not avoid the useful signal detection and recognition on the signal level of units of photons per second. This is background photon flux about two orders of magnitude higher than what the conventional solid-state photon counters accept. The detection timing resolution should be better than 100 ps and the delay stability should be on picosecond level. We have developed and tested the active quenched and gated avalanche structure on silicon providing the required features in connection with the K14 detection chips. The detector is capable of gated operation under the conditions of background photon flux of 5x10 9 photons per second. The operational detector tolerates long term exposures to the input photon flux exceeding 10 15 photons (>1 mW) per second without damage.

  17. Hallo photons calls photon; Allo photon appelle photon

    Energy Technology Data Exchange (ETDEWEB)

    Anon.

    1997-09-01

    When a pair of photons is created, it seems that these 2 photons are bound together by a mysterious link. This phenomenon has been discovered at the beginning of the seventies. In this new experiment the 2 photons are separated and have to follow different ways through optic cables until they face a quantum gate. At this point they have to chose between a short and a long itinerary. Statistically they have the same probability to take either. In all cases the 2 photons agree to do the same choice even if the 2 quantum gates are distant of about 10 kilometers. Some applications in ciphering and coding of messages are expected. (A.C.)

  18. Co-integrated 1.3µm hybrid III-V/silicon tunable laser and silicon Mach-Zehnder modulator operating at 25Gb/s.

    Science.gov (United States)

    Ferrotti, Thomas; Blampey, Benjamin; Jany, Christophe; Duprez, Hélène; Chantre, Alain; Boeuf, Frédéric; Seassal, Christian; Ben Bakir, Badhise

    2016-12-26

    In this paper, the 200mm silicon-on-insulator (SOI) platform is used to demonstrate the monolithic co-integration of hybrid III-V/silicon distributed Bragg reflector (DBR) tunable lasers and silicon Mach-Zehnder modulators (MZMs), to achieve fully integrated hybrid transmitters for silicon photonics. The design of each active component, as well as the fabrication process steps of the whole architecture are described in detail. A data transmission rate up to 25Gb/s has been reached for transmitters using MZMs with active lengths of 2mm and 4mm. Extinction ratios of respectively 2.9dB and 4.7dB are obtained by applying drive voltages of 2.5V peak-to-peak on the MZMs. 25Gb/s data transmission is demonstrated at 1303.5nm and 1315.8nm, with the possibility to tune the operating wavelength by up to 8.5nm in each case, by using metallic heaters above the laser Bragg reflectors.

  19. Photonic quantum technologies (Presentation Recording)

    Science.gov (United States)

    O'Brien, Jeremy L.

    2015-09-01

    The impact of quantum technology will be profound and far-reaching: secure communication networks for consumers, corporations and government; precision sensors for biomedical technology and environmental monitoring; quantum simulators for the design of new materials, pharmaceuticals and clean energy devices; and ultra-powerful quantum computers for addressing otherwise impossibly large datasets for machine learning and artificial intelligence applications. However, engineering quantum systems and controlling them is an immense technological challenge: they are inherently fragile; and information extracted from a quantum system necessarily disturbs the system itself. Of the various approaches to quantum technologies, photons are particularly appealing for their low-noise properties and ease of manipulation at the single qubit level. We have developed an integrated waveguide approach to photonic quantum circuits for high performance, miniaturization and scalability. We will described our latest progress in generating, manipulating and interacting single photons in waveguide circuits on silicon chips.

  20. Overview of bunch length measurements

    International Nuclear Information System (INIS)

    Lumpkin, A. H.

    1999-01-01

    An overview of particle and photon beam bunch length measurements is presented in the context of free-electron laser (FEL) challenges. Particle-beam peak current is a critical factor in obtaining adequate FEL gain for both oscillators and self-amplified spontaneous emission (SASE) devices. Since measurement of charge is a standard measurement, the bunch length becomes the key issue for ultrashort bunches. Both time-domain and frequency-domain techniques are presented in the context of using electromagnetic radiation over eight orders of magnitude in wavelength. In addition, the measurement of microbunching in a micropulse is addressed

  1. Microwave photonics

    CERN Document Server

    Lee, Chi H

    2013-01-01

    Microwave photonics continues to see rapid growth. The integration of optical fiber and wireless networks has become a commercial reality and is becoming increasingly pervasive. Such hybrid technology will lead to many innovative applications, including backhaul solutions for mobile networks and ultrabroadband wireless networks that can provide users with very high bandwidth services. Microwave Photonics, Second Edition systematically introduces important technologies and applications in this emerging field. It also reviews recent advances in micro- and millimeter-wavelength and terahertz-freq

  2. Photon diffraction

    Science.gov (United States)

    Hodge, John

    2009-11-01

    In current light models, a particle-like model of light is inconsistent with diffraction observations. A model of light is proposed wherein photon inferences are combined with the cosmological scalar potential model (SPM). That the photon is a surface with zero surface area in the travel direction is inferred from the Michelson-Morley experiment. That the photons in slits are mathematically treated as a linear antenna array (LAA) is inferred from the comparison of the transmission grating interference pattern and the single slit diffraction pattern. That photons induce a LAA wave into the plenum is inferred from the fractal model. Similarly, the component of the photon (the hod) is treated as a single antenna radiating a potential wave into the plenum. That photons are guided by action on the surface of the hod is inferred from the SPM. The plenum potential waves are a real field (not complex) that forms valleys, consistent with the pilot waves of the Bohm interpretation of quantum mechanics. Therefore, the Afshar experiment result is explained, supports Bohm, and falsifies Copenhagen. The papers may be viewed at http://web.citcom.net/˜scjh/.

  3. Nonlinear optical interactions in silicon waveguides

    Directory of Open Access Journals (Sweden)

    Kuyken B.

    2017-03-01

    Full Text Available The strong nonlinear response of silicon photonic nanowire waveguides allows for the integration of nonlinear optical functions on a chip. However, the detrimental nonlinear optical absorption in silicon at telecom wavelengths limits the efficiency of many such experiments. In this review, several approaches are proposed and demonstrated to overcome this fundamental issue. By using the proposed methods, we demonstrate amongst others supercontinuum generation, frequency comb generation, a parametric optical amplifier, and a parametric optical oscillator.

  4. ISPA (imaging silicon pixel array) experiment

    CERN Multimedia

    Patrice Loïez

    2002-01-01

    The ISPA tube is a position-sensitive photon detector. It belongs to the family of hybrid photon detectors (HPD), recently developed by CERN and INFN with leading photodetector firms. HPDs confront in a vacuum envelope a photocathode and a silicon detector. This can be a single diode or a pixelized detector. The electrons generated by the photocathode are efficiently detected by the silicon anode by applying a high-voltage difference between them. ISPA tube can be used in high-energy applications as well as bio-medical and imaging applications.

  5. Analysis of transit time spread on FBK silicon photomultipliers

    International Nuclear Information System (INIS)

    Acerbi, F.; Gola, A.; Ferri, A.; Zorzi, N.; Paternoster, G.; Piemonte, C.

    2015-01-01

    In this paper we studied one of the aspects potentially limiting the single-photon time-resolution (SPTR) of the silicon photomultiplier (SiPM): the transit time spread (TTS). We illuminated the SiPM in different positions with a fast-pulsed laser collimated to a circular spot of 0.2 mm-diameter and acquired bi-dimensional maps of the avalanche-signal arrival time of RGB and RGB-HD SiPMs, produced at FBK. We studied the effect of both the number of bonding wires connecting the device to the package and the layout of the top-metal connection (on the device). We found that the TTS does not simply depend on the trace length between the cell and the bonding pad and it could vary in the range between tens of picoseconds (with 3 bonding connections) to more than one hundred of picoseconds (with one connection)

  6. Topology optimization and fabrication of photonic crystal structures

    DEFF Research Database (Denmark)

    Borel, Peter Ingo; Harpøth, Anders; Frandsen, Lars Hagedorn

    2004-01-01

    Topology optimization is used to design a planar photonic crystal waveguide component resulting in significantly enhanced functionality. Exceptional transmission through a photonic crystal waveguide Z-bend is obtained using this inverse design strategy. The design has been realized in a silicon-on-insulator...

  7. Hybrid III-V/silicon lasers

    Science.gov (United States)

    Kaspar, P.; Jany, C.; Le Liepvre, A.; Accard, A.; Lamponi, M.; Make, D.; Levaufre, G.; Girard, N.; Lelarge, F.; Shen, A.; Charbonnier, P.; Mallecot, F.; Duan, G.-H.; Gentner, J.-.; Fedeli, J.-M.; Olivier, S.; Descos, A.; Ben Bakir, B.; Messaoudene, S.; Bordel, D.; Malhouitre, S.; Kopp, C.; Menezo, S.

    2014-05-01

    The lack of potent integrated light emitters is one of the bottlenecks that have so far hindered the silicon photonics platform from revolutionizing the communication market. Photonic circuits with integrated light sources have the potential to address a wide range of applications from short-distance data communication to long-haul optical transmission. Notably, the integration of lasers would allow saving large assembly costs and reduce the footprint of optoelectronic products by combining photonic and microelectronic functionalities on a single chip. Since silicon and germanium-based sources are still in their infancy, hybrid approaches using III-V semiconductor materials are currently pursued by several research laboratories in academia as well as in industry. In this paper we review recent developments of hybrid III-V/silicon lasers and discuss the advantages and drawbacks of several integration schemes. The integration approach followed in our laboratory makes use of wafer-bonded III-V material on structured silicon-on-insulator substrates and is based on adiabatic mode transfers between silicon and III-V waveguides. We will highlight some of the most interesting results from devices such as wavelength-tunable lasers and AWG lasers. The good performance demonstrates that an efficient mode transfer can be achieved between III-V and silicon waveguides and encourages further research efforts in this direction.

  8. The Solenoidal Detector Collaboration silicon detector system

    International Nuclear Information System (INIS)

    Ziock, H.J.; Gamble, M.T.; Miller, W.O.; Palounek, A.P.T.; Thompson, T.C.

    1992-01-01

    Silicon tracking systems will be fundamental components of the tracking systems for both planned major SSC experiments. Despite its seemingly small size, it occupies a volume of more than 5 meters in length and 1 meter in diameter and is an order of magnitude larger than any silicon detector system previously built. This report discusses its design and operation

  9. The effect of gate length on SOI-MOSFETS operation | Baedi ...

    African Journals Online (AJOL)

    The effect of gate length on the operation of silicon-on-insulator (SOI) MOSFET structure with a layer of buried silicon oxide added to isolate the device body has been simulated. Three transistors with gate lengths of 100, 200 and 500 nm were simulated. Simulations showed that with a fixed channel length, when the gate ...

  10. Novel single photon sources for new generation of quantum communications

    Science.gov (United States)

    2017-06-13

    state single photon sources that was published in Nature Photonics in October 2016. 15. SUBJECT TERMS diamond color center, diamond, AOARD 16. SECURITY...platform for quantum emitters. We developed means to increase their density, developed basic methods to engineer them, and demonstrate coupling to...manipulation of a silicon vacancy color cent er in a nanodiamond. We demonstrate ultra fast coherent control of a photon, that make s this defect

  11. Fabrication of Nanoimprint stamps for photonic crystals

    International Nuclear Information System (INIS)

    Kouba, J; Kubenz, M; Mai, A; Ropers, G; Eberhardt, W; Loechel, B

    2006-01-01

    We report on fabrication of nanoimprint stamps for fabrication of two dimensional photonic crystals in visible range of spectra. Nanoimprint stamps made of silicon and/or nickel were successfully fabricated using electron beam lithography and advanced dry etching techniques. The quality of the stamps was evaluated using scanning electron microscopy. The fabricated stamps were also evaluated by imprinting them into suitable polymer materials

  12. Bandwidth engineering of photonic crystal waveguide bends

    DEFF Research Database (Denmark)

    Borel, Peter Ingo; Frandsen, Lars Hagedorn; Harpøth, Anders

    2004-01-01

    An effective design principle has been applied to photonic crystal waveguide bends fabricated in silicon-on-insulator material using deep UV lithography resulting in a large increase in the low-loss bandwidth of the bends. Furthermore, it is experimentally demonstrated that the absolute bandwidth...... range can be adjusted in a post-fabrication thermal oxidation process....

  13. Bandwidth engineering of photonic crystal waveguide bends

    DEFF Research Database (Denmark)

    Borel, Peter Ingo; Frandsen, Lars Hagedorn; Harpøth, Anders

    2004-01-01

    An effective design principle has been applied to photonic crystal waveguide bends fabricated in silicon-on-insulator material using deep UV lithography resulting in a large increase in the low-loss bandwidth of the bends. Furthermore, it is experimentally demonstrated that the absolute bandwidth...

  14. XPS study of palladium sensitized nano porous silicon thin film

    Indian Academy of Sciences (India)

    Stability of the contact was studied for a time period of around 30 days and no significant ageing effect could be observed. Keywords. Porous silicon; passivation ... It has a wide range of applications in photonics and optoelectronics, quantum electronics, silicon-on insulator technology and recently in sensors (Dimitrov 1995; ...

  15. Synthesis and characterization of nano silicon and titanium nitride ...

    Indian Academy of Sciences (India)

    Silicon nanoparticles attract a great deal of attention as they are used in logic gates, memory devices, light- emitting devices, sensors, bio-imaging, energy storage and photonic applications.1 Titanium nitride (TiN) is extensively used as an anti-wear coating,2 bio replace- ments,3 contact/barrier layer to silicon and as a gate.

  16. Large-bandwidth planar photonic crystal waveguides

    DEFF Research Database (Denmark)

    Søndergaard, Thomas; Lavrinenko, Andrei

    2002-01-01

    A general design principle is presented for making finite-height photonic crystal waveguides that support leakage-free guidance of light over large frequency intervals. The large bandwidth waveguides are designed by introducing line defects in photonic crystal slabs, where the material in the line...... defect has appropriate dispersion properties relative to the photonic crystal slab material surrounding the line defect. A three-dimensional theoretical analysis is given for large-bandwidth waveguide designs based on a silicon-air photonic crystal slab suspended in air. In one example, the leakage......-free single-mode guidance is found for a large frequency interval covering 60% of the photonic band-gap....

  17. Quantum photonics

    CERN Document Server

    Pearsall, Thomas P

    2017-01-01

    This textbook employs a pedagogical approach that facilitates access to the fundamentals of Quantum Photonics. It contains an introductory description of the quantum properties of photons through the second quantization of the electromagnetic field, introducing stimulated and spontaneous emission of photons at the quantum level. Schrödinger’s equation is used to describe the behavior of electrons in a one-dimensional potential. Tunneling through a barrier is used to introduce the concept of non­locality of an electron at the quantum level, which is closely-related to quantum confinement tunneling, resonant tunneling, and the origin of energy bands in both periodic (crystalline) and aperiodic (non-crystalline) materials. Introducing the concepts of reciprocal space, Brillouin zones, and Bloch’s theorem, the determination of electronic band structure using the pseudopotential method is presented, allowing direct computation of the band structures of most group IV, group III-V, and group II-VI semiconducto...

  18. Green photonics

    International Nuclear Information System (INIS)

    Quan, Frederic

    2012-01-01

    Photonics, the broad merger of electronics with the optical sciences, encompasses such a wide swath of technology that its impact is almost universal in our everyday lives. This is a broad overview of some aspects of the industry and their contribution to the ‘green’ or environmental movement. The rationale for energy conservation is briefly discussed and the impact of photonics on our everyday lives and certain industries is described. Some opinions from industry are presented along with market estimates. References are provided to some of the most recent research in these areas. (review article)

  19. Modelling of photonic crystal fibres

    DEFF Research Database (Denmark)

    Knudsen, Erik

    2003-01-01

    , as well as a honeycomb bandgap fibre and the first analysis of semi-periodic layered air-hole fibres. Using the modelling framework established as a basis, we provide an analysis of microbend loss, by regarding displacement of a fibre core as a stationary stochastic process, inducing mismatch between......In the presenta ph.d. work a theoretical study of aspects of modelling photonic crystal fibres was carried out. Photonic crystal fibres form a class of optical waveguides where guidance is no longer provided by a difference in refractive index between core and cladding. Instead, guidance...... is provided by an arrangement of air-holes running along the length of the fibre. Depending on the geometry of the fibre, the guiding mechanism may be either arising from the formation of a photonic bandgap in the cladding structure (photonic bandgap fibre), or by an effect resembling total internal...

  20. Nonlinear Silicon Waveguides for Integrated Fiber Laser Systems

    Science.gov (United States)

    Wong, Chi Yan

    clocks for high speed applications and coherent optical comb source for high spectral efficiency modulation schemes such as orthogonal frequency division multiplexing (OFDM). Besides the parametric processes, we study a graphene based saturable absorber which can be used to achieve ultrafast passive mode-locked laser for SOI sensing platform. Graphene based photonic devices have attracted considerable interest because of their unique zero bandgap and linear electronic dispersion. The graphene on silicon waveguide structure offers the advantage of greatly increasing the interaction length compared to the geometry with light incident normal to the graphene plane. We describe a mode-locked fiber laser using graphene on silicon saturable absorber. Finally, we study the possibility of expanding the working wavelengths to mid-infrared (mid-IR) for chemical sensing or free-space communications. MRRs were fabricated on silicon-on-sapphire (SOS) wafer and characterized at 2.75 microm. We developed a characterization technique to measure the Q of MRRs using a fixed wavelength source by only varying the temperature of the device. The proposed method provides an alternative method of Q measurement for MRRs in mid-IR where tunable lasers may not be easily available.

  1. Few photon switching with slow light in hollow fiber

    DEFF Research Database (Denmark)

    Bajcsy, Michal; Hofferberth, S.; Balic, Vlatko

    2009-01-01

    Cold atoms confined inside a hollow-core photonic-crystal fiber with core diameters of a few photon wavelengths are a promising medium for studying nonlinear optical interactions at extremely low light levels. The high electric field intensity per photon and interaction lengths not limited...

  2. Titanium catalyzed silicon nanowires and nanoplatelets

    Directory of Open Access Journals (Sweden)

    Mohammad A. U. Usman

    2013-03-01

    Full Text Available Silicon nanowires, nanoplatelets, and other morphologies resulted from silicon growth catalyzed by thin titanium layers. The nanowires have diameters down to 5 nm and lengths to tens of micrometers. The two-dimensional platelets, in some instances with filigreed, snow flake-like shapes, had thicknesses down to the 10 nm scale and spans to several micrometers. These platelets grew in a narrow temperature range around 900 celsius, apparently representing a new silicon crystallite morphology at this length scale. We surmise that the platelets grow with a faceted dendritic mechanism known for larger crystals nucleated by titanium silicide catalyst islands.

  3. Photon Differentials

    DEFF Research Database (Denmark)

    Schjøth, Lars; Frisvad, Jeppe Revall; Erleben, Kenny

    2007-01-01

    illumination features. This is often not desirable as these may lose clarity or vanish altogether. We present an accurate method for reconstruction of indirect illumination with photon mapping. Instead of reconstructing illumination using classic density estimation on finite points, we use the correlation...

  4. Photon Rao

    Indian Academy of Sciences (India)

    Volume 2 Issue 5 May 1997 pp 69-72 Feature Article. Molecule of the Month Molecular–Chameleon: Solvatochromism at its Iridescent Best! Photon Rao · More Details Fulltext PDF. Volume 16 Issue 12 December 2011 pp 1303-1306. Molecule of the Month - Molecular-Chameleon: Solvatochromism at its Iridescent Best!

  5. Quantum interference and manipulation of entanglement in silicon wire waveguide quantum circuits

    International Nuclear Information System (INIS)

    Bonneau, D; Engin, E; O'Brien, J L; Thompson, M G; Ohira, K; Suzuki, N; Yoshida, H; Iizuka, N; Ezaki, M; Natarajan, C M; Tanner, M G; Hadfield, R H; Dorenbos, S N; Zwiller, V

    2012-01-01

    Integrated quantum photonic waveguide circuits are a promising approach to realizing future photonic quantum technologies. Here, we present an integrated photonic quantum technology platform utilizing the silicon-on-insulator material system, where quantum interference and the manipulation of quantum states of light are demonstrated in components orders of magnitude smaller than previous implementations. Two-photon quantum interference is presented in a multi-mode interference coupler, and the manipulation of entanglement is demonstrated in a Mach-Zehnder interferometer, opening the way to an all-silicon photonic quantum technology platform. (paper)

  6. Detection of Infrared Photons Using the Electronic Stress in Metal-Semiconductor Interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Datskos, P.G.; Datskou, I.; Egert, C.M.; Rjic, S.

    1999-04-05

    It is well known that the work function of metals decreases when they are placed in a nonpolar liquid. A similar decrease occurs when the metal is placed into contact with a semiconductor forming a Schottky barrier. We report on a new method for detecting photons using the stress caused by photo-electrons emitted from a metal film surface in contact with a semiconductor microstructure. The photoelectrons diffuse into the microstructure and produce an electronic stress. The photon detection results from the measurement of the photo-induced bending of the microstructure. Internal photoemission has been used in the past to detect photons, however, in those cases the detection was accomplished by measuring the current due to photoelectrons and not due to electronic stress. Small changes in position (displacement) of microstructures are routinely measured in atomic force microscopy (AFM) where atomic imaging of surfaces relies on the measurement of small changes (< l0{sup -9} m) in the bending of microcantilevers. In the present work we studied the photon response of Si microcantilevers coated with a thin film of Pt. The Si microcantilevers were 500 nm thick and had a 30 nm layer of Pt. Photons with sufficient energies produce electrons from the platinum-silicon interface which diffuse into the Si and produce an electronic stress. Since the excess charge carriers cause the Si microcantilever to contract in length but not the Pt layer, the bimaterial microcantilever bends. In our present studies we used the optical detection technique to measure the photometric response of Pt-Si microcantilevers as a function of photon energy. The charge carriers responsible for the photo-induced stress in Si, were produced via internal photoemission using a diode laser with wavelength {lambda} = 1550 nm.

  7. Transverse angular momentum in topological photonic crystals

    Science.gov (United States)

    Deng, Wei-Min; Chen, Xiao-Dong; Zhao, Fu-Li; Dong, Jian-Wen

    2018-01-01

    Engineering local angular momentum of structured light fields in real space enables applications in many fields, in particular, the realization of unidirectional robust transport in topological photonic crystals with a non-trivial Berry vortex in momentum space. Here, we show transverse angular momentum modes in silicon topological photonic crystals when considering transverse electric polarization. Excited by a chiral external source with either transverse spin angular momentum or transverse phase vortex, robust light flow propagating along opposite directions is observed in several kinds of sharp-turn interfaces between two topologically-distinct silicon photonic crystals. A transverse orbital angular momentum mode with alternating phase vortex exists at the boundary of two such photonic crystals. In addition, unidirectional transport is robust to the working frequency even when the ring size or location of the pseudo-spin source varies in a certain range, leading to the superiority of the broadband photonic device. These findings enable one to make use of transverse angular momentum, a kind of degree of freedom, to achieve unidirectional robust transport in the telecom region and other potential applications in integrated photonic circuits, such as on-chip robust delay lines.

  8. Silicon Qubits

    Energy Technology Data Exchange (ETDEWEB)

    Ladd, Thaddeus D. [HRL Laboratories, LLC, Malibu, CA (United States); Carroll, Malcolm S. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2018-02-28

    Silicon is a promising material candidate for qubits due to the combination of worldwide infrastructure in silicon microelectronics fabrication and the capability to drastically reduce decohering noise channels via chemical purification and isotopic enhancement. However, a variety of challenges in fabrication, control, and measurement leaves unclear the best strategy for fully realizing this material’s future potential. In this article, we survey three basic qubit types: those based on substitutional donors, on metal-oxide-semiconductor (MOS) structures, and on Si/SiGe heterostructures. We also discuss the multiple schema used to define and control Si qubits, which may exploit the manipulation and detection of a single electron charge, the state of a single electron spin, or the collective states of multiple spins. Far from being comprehensive, this article provides a brief orientation to the rapidly evolving field of silicon qubit technology and is intended as an approachable entry point for a researcher new to this field.

  9. Photon detectors

    International Nuclear Information System (INIS)

    Va'vra, J.

    1995-10-01

    J. Seguinot and T. Ypsilantis have recently described the theory and history of Ring Imaging Cherenkov (RICH) detectors. In this paper, I will expand on these excellent review papers, by covering the various photon detector designs in greater detail, and by including discussion of mistakes made, and detector problems encountered, along the way. Photon detectors are among the most difficult devices used in physics experiments, because they must achieve high efficiency for photon transport and for the detection of single photo-electrons. For gaseous devices, this requires the correct choice of gas gain in order to prevent breakdown and wire aging, together with the use of low noise electronics having the maximum possible amplification. In addition, the detector must be constructed of materials which resist corrosion due to photosensitive materials such as, the detector enclosure must be tightly sealed in order to prevent oxygen leaks, etc. The most critical step is the selection of the photocathode material. Typically, a choice must be made between a solid (CsI) or gaseous photocathode (TMAE, TEA). A conservative approach favors a gaseous photocathode, since it is continuously being replaced by flushing, and permits the photon detectors to be easily serviced (the air sensitive photocathode can be removed at any time). In addition, it can be argued that we now know how to handle TMAE, which, as is generally accepted, is the best photocathode material available as far as quantum efficiency is concerned. However, it is a very fragile molecule, and therefore its use may result in relatively fast wire aging. A possible alternative is TEA, which, in the early days, was rejected because it requires expensive CaF 2 windows, which could be contaminated easily in the region of 8.3 eV and thus lose their UV transmission

  10. Rationally designed porous silicon as platform for optical biosensors

    Energy Technology Data Exchange (ETDEWEB)

    Priano, G. [INQUIMAE, DQIAyQF, FCEN, Universidad de Buenos Aires, Ciudad Universitaria, Pabellon 2 (C1428EHA) Buenos Aires (Argentina); Acquaroli, L.N.; Lasave, L.C. [Instituto De Desarrollo Tecnologico Para La Industria Quimica, UNL, CONICET, Gueemes 3450 (S3000GLN) Santa Fe (Argentina); Battaglini, F. [INQUIMAE, DQIAyQF, FCEN, Universidad de Buenos Aires, Ciudad Universitaria, Pabellon 2 (C1428EHA) Buenos Aires (Argentina); Arce, R.D., E-mail: rarce@intec.unl.edu.ar [Instituto De Desarrollo Tecnologico Para La Industria Quimica, UNL, CONICET, Gueemes 3450 (S3000GLN) Santa Fe (Argentina); Departamento De Materiales, Facultad De Ingenieria Quimica, UNL, Santiago del Estero 2829 (S3000) Santa Fe (Argentina); Koropecki, R.R. [Instituto De Desarrollo Tecnologico Para La Industria Quimica, UNL, CONICET, Gueemes 3450 (S3000GLN) Santa Fe (Argentina); Departamento De Materiales, Facultad De Ingenieria Quimica, UNL, Santiago del Estero 2829 (S3000) Santa Fe (Argentina)

    2012-08-01

    Optical porous silicon multilayer structures are able to work as sensitive chemical sensors or biosensors based in their optical response. An algorithm to simulate the optical response of these multilayers was developed, considering the optical properties of the individual layers. The algorithm allows designing and customizing the porous silicon structures according to a given application. The results obtained by the simulation were experimentally verified; for this purpose different photonic structures were prepared, such as Bragg reflectors and microcavities. Some of these structures have been derivatized by the introduction of aminosilane groups on the porous silicon surface. The algorithm also permits to simulate the effects produced by a non uniform derivatization of the multilayer. - Highlights: Black-Right-Pointing-Pointer Mesoporous silicon structure Black-Right-Pointing-Pointer Functionalization of mesoporous silicon as sensors Black-Right-Pointing-Pointer Design of the one-dimensional photonic crystal Black-Right-Pointing-Pointer Simulation of non-uniformity in covering the sensor structure.

  11. Experimental search for solar hidden photons in the eV energy range using kinetic mixing with photons

    International Nuclear Information System (INIS)

    Mizumoto, T.; Ohta, R.; Horie, T.; Suzuki, J.; Minowa, M.; Inoue, Y.

    2013-01-01

    We have searched for solar hidden photons in the eV energy range using a dedicated hidden photon detector. The detector consisted of a parabolic mirror with a diameter of 500 mm and a focal length of 1007 mm installed in a vacuum chamber, and a photomultiplier tube at its focal point. The detector was attached to the Tokyo axion helioscope, Sumico which has a mechanism to track the sun. From the result of the measurement, we found no evidence for the existence of hidden photons and set a limit on the photon-hidden photon mixing parameter χ depending on the hidden photon mass m γ'

  12. Integrated photonics for infrared spectroscopic sensing

    Science.gov (United States)

    Lin, Hongtao; Kita, Derek; Han, Zhaohong; Su, Peter; Agarwal, Anu; Yadav, Anupama; Richardson, Kathleen; Gu, Tian; Hu, Juejun

    2017-05-01

    Infrared (IR) spectroscopy is widely recognized as a gold standard technique for chemical analysis. Traditional IR spectroscopy relies on fragile bench-top instruments located in dedicated laboratory settings, and is thus not suitable for emerging field-deployed applications such as in-line industrial process control, environmental monitoring, and point-ofcare diagnosis. Recent strides in photonic integration technologies provide a promising route towards enabling miniaturized, rugged platforms for IR spectroscopic analysis. Chalcogenide glasses, the amorphous compounds containing S, Se or Te, have stand out as a promising material for infrared photonic integration given their broadband infrared transparency and compatibility with silicon photonic integration. In this paper, we discuss our recent work exploring integrated chalcogenide glass based photonic devices for IR spectroscopic chemical analysis, including on-chip cavityenhanced chemical sensing and monolithic integration of mid-IR waveguides with photodetectors.

  13. The DAMPE silicon tungsten tracker

    CERN Document Server

    Gallo, Valentina; Asfandiyarov, R; Azzarello, P; Bernardini, P; Bertucci, B; Bolognini, A; Cadoux, F; Caprai, M; Domenjoz, M; Dong, Y; Duranti, M; Fan, R; Franco, M; Fusco, P; Gargano, F; Gong, K; Guo, D; Husi, C; Ionica, M; Lacalamita, N; Loparco, F; Marsella, G; Mazziotta, M N; Mongelli, M; Nardinocchi, A; Nicola, L; Pelleriti, G; Peng, W; Pohl, M; Postolache, V; Qiao, R; Surdo, A; Tykhonov, A; Vitillo, S; Wang, H; Weber, M; Wu, D; Wu, X; Zhang, F; De Mitri, I; La Marra, D

    2017-01-01

    The DArk Matter Particle Explorer (DAMPE) satellite has been successfully launched on the 17th December 2015. It is a powerful space detector designed for the identification of possible Dark Matter signatures thanks to its capability to detect electrons and photons with an unprecedented energy resolution in an energy range going from few GeV up to 10 TeV. Moreover, the DAMPE satellite will contribute to a better understanding of the propagation mechanisms of high energy cosmic rays measuring the nuclei flux up to 100 TeV. DAMPE is composed of four sub-detectors: a plastic strip scintillator, a silicon-tungsten tracker-converter (STK), a BGO imaging calorimeter and a neutron detector. The STK is made of twelve layers of single-sided AC-coupled silicon micro-strip detectors for a total silicon area of about 7 $m^2$ . To promote the conversion of incident photons into electron-positron pairs, tungsten foils are inserted into the supporting structure. In this document, a detailed description of the STK constructi...

  14. Photonics of 2D materials

    Science.gov (United States)

    Zhang, Han; Wang, Junzhuan; Hasan, Tawfique; Bao, Qiaoliang

    2018-01-01

    The emergence of graphene and graphene-like two dimensional (2D) materials has attracted a strong interest from the photonics community in recent decade. Apart from zero-gap graphene, insulating hexagonal boron nitride and semiconducting transition metal dichalcogenides and phosphorene/black phosphorus are being intensively investigated because of their fascinating photonic and optoelectronic properties. Compared to traditional bulk photonic materials such as Gallium Arsenide (GaAs) and Silicon (Si), 2D materials exhibit many unique properties important for device applications in nanophotonics. Firstly, quantum confinement in the direction perpendicular to 2D plane leads to novel electronic and optical features that are distinctively different from their bulk counterparts. Secondly, their surfaces are naturally passivated without any dangling bonds making them readily compatible for integration with photonic structures such as waveguides and cavities. It is also possible to construct vertical hetero-structures by using different 2D materials, without considering lattice mismatch issues that are common in bulk semiconductors. This is because the 2D layers with different lattice constants in heterostructures are only weakly bounded by van der Waals force. Thirdly, despite being atomically thin, many 2D materials interact very strongly with light.

  15. The dose distributions of γ ray in the silicon in and near the interfaces of silicon and various materials

    International Nuclear Information System (INIS)

    Ba Weizhen; Wu Qingzhi; He Chengfa; Chen Chaoyang

    1996-01-01

    The depth dose distributions of γ ray in the silicon in and near the interfaces of silicon and various materials, such as gold, have been studied. The dose distributions have been compared with equilibrium doses in the homogeneous silicon material, and considerable dose gradient distributions were obtained. In the case of silicon adjacent to high atomic numbered material, dose enhancement effects have been observed in and near the interfaces. The dose gradient distributions were explained by photoelectron effect, Auger effect and secondary electron transport mechanism of the low energy scattering photons

  16. Applications of Photonic Crystals to Photovoltaic Devices

    Science.gov (United States)

    Foster, Stephen

    Photonic crystals are structures that exhibit wavelength-scale spatial periodicity in their dielectric function. They are best known for their ability to exhibit complete photonic band gaps (PBGs) - spectral regions over which no light can propagate within the crystal. PBGs are specific instances of a more general phenomenon, in which the local photonic density of states can be enhanced or suppressed over different frequency ranges by tuning the properties of the crystal. This can be used to redirect, concentrate, or even trap light incident on the crystal. In this thesis, we investigate how photonic crystals can be used to enhance the efficiency of photovoltaic devices by trapping light. Due to the many different types of photovoltaic devices in existence (varying widely in materials used, modes of operation, and internal structure), there is no single light trapping architecture that can be applied to all photovoltaics. In this work we study a number of different devices: dye-sensitized solar cells, polymer solar cells, silicon-perovskite tandem cells, and single-junction silicon cells. We propose novel photonic crystal-based light trapping designs for each type of device, and evaluate these designs numerically to demonstrate their effectiveness. Full-field optical simulations of the cell are performed for each design, using either finite element method (FEM) or finite-difference time-domain (FDTD) techniques. Where appropriate, electrical modelling of the cell is also performed, through either the use of a simple one-diode model, or by obtaining full solutions to the semiconductor drift-diffusion equations within the cell. In all cases we find that the photonic crystal-based designs significantly outperform their non-nanostructured counterparts. In the case of dye-sensitized and polymer cells, enhancements in light absorption of 33% and 40% (respectively) are seen, relative to reference cells with planar geometries. In the case of silicon-perovskite tandem cells

  17. Photon factory

    International Nuclear Information System (INIS)

    Tanaka, J.; Huke, K.; Chikawa, J.

    1985-01-01

    The Photon Factory (PF) was established on April 1, 1978 at KEK. The PF is a synchrotron radiation facility, which has a 2.5 GeV electron storage ring fully dedicated to the SR usage and a 2.5 GeV electron linac supplying electrons and positrons to the PF ring and the accumulation ring of TRISTAN (30 GeV electron-positron colliding machine). The PF consists of three departments, injector linac, light source, and instrumentation department. The facility is described

  18. Quantum Properties of Dichroic Silicon Vacancies in Silicon Carbide

    Science.gov (United States)

    Nagy, Roland; Widmann, Matthias; Niethammer, Matthias; Dasari, Durga B. R.; Gerhardt, Ilja; Soykal, Öney O.; Radulaski, Marina; Ohshima, Takeshi; Vučković, Jelena; Son, Nguyen Tien; Ivanov, Ivan G.; Economou, Sophia E.; Bonato, Cristian; Lee, Sang-Yun; Wrachtrup, Jörg

    2018-03-01

    Although various defect centers have displayed promise as either quantum sensors, single photon emitters, or light-matter interfaces, the search for an ideal defect with multifunctional ability remains open. In this spirit, we study the dichroic silicon vacancies in silicon carbide that feature two well-distinguishable zero-phonon lines and analyze the quantum properties in their optical emission and spin control. We demonstrate that this center combines 40% optical emission into the zero-phonon lines showing the contrasting difference in optical properties with varying temperature and polarization, and a 100% increase in the fluorescence intensity upon the spin resonance, and long spin coherence time of their spin-3 /2 ground states up to 0.6 ms. These results single out this defect center as a promising system for spin-based quantum technologies.

  19. High-quality photonic crystals with a nearly complete band gap obtained by direct inversion of woodpile templates with titanium dioxide.

    Science.gov (United States)

    Marichy, Catherine; Muller, Nicolas; Froufe-Pérez, Luis S; Scheffold, Frank

    2016-02-25

    Photonic crystal materials are based on a periodic modulation of the dielectric constant on length scales comparable to the wavelength of light. These materials can exhibit photonic band gaps; frequency regions for which the propagation of electromagnetic radiation is forbidden due to the depletion of the density of states. In order to exhibit a full band gap, 3D PCs must present a threshold refractive index contrast that depends on the crystal structure. In the case of the so-called woodpile photonic crystals this threshold is comparably low, approximately 1.9 for the direct structure. Therefore direct or inverted woodpiles made of high refractive index materials like silicon, germanium or titanium dioxide are sought after. Here we show that, by combining multiphoton lithography and atomic layer deposition, we can achieve a direct inversion of polymer templates into TiO2 based photonic crystals. The obtained structures show remarkable optical properties in the near-infrared region with almost perfect specular reflectance, a transmission dip close to the detection limit and a Bragg length comparable to the lattice constant.

  20. A counting silicon microstrip detector for precision compton polarimetry

    CERN Document Server

    Doll, D W; Hillert, W; Krüger, H; Stammschroer, K; Wermes, N

    2002-01-01

    A detector for the detection of laser photons backscattered off an incident high-energy electron beam for precision Compton polarimetry in the 3.5 GeV electron stretcher ring ELSA at Bonn University has been developed using individual photon counting. The photon counting detector is based on a silicon microstrip detector system using dedicated ASIC chips. The produced hits by the pair converted Compton photons are accumulated rather than individually read out. A transverse profile displacement can be measured with mu m accuracy rendering a polarization measurement of the order of 1% on the time scale of 10-15 min possible.

  1. Silicon photomultiplier timing performance study

    Science.gov (United States)

    Gamal, Ahmed; Paul, Bühler; Johann, Marton; Ken, Suzuki

    2011-10-01

    Many characteristics of Silicon Photomultipliers can be tuned with temperature and operation voltage. We present preliminary results of a study of the effect of these two operation parameters on the time resolution of large active area Multi-Pixel Photon Counters (MPPCs) manufactured by Hamamatsu. Measurements at -10, 0, and 10 °C at different bias voltages were performed. The time resolution is best at low temperature and high over-voltage. Most significant improvements can be achieved in cases with low number of fired pixels (40 pixels) the effect of temperature and operation voltage becomes smaller. The timing performance still improves with decreasing temperature ( ≈factor of 2) but it hardly depends on the operation voltage. The study shows that especially in applications where only few photons are available for detection a careful optimization of temperature and operation voltage are advisable to obtain optimum timing results with the MPPC.

  2. Ultra-low reflection porous silicon nanowires for solar cell applications

    KAUST Repository

    Najar, Adel

    2012-01-01

    High density vertically aligned Porous Silicon NanoWires (PSiNWs) were fabricated on silicon substrate using metal assisted chemical etching process. A linear dependency of nanowire length to the etching time was obtained and the change in the growth rate of PSiNWs by increasing etching durations was shown. A typical 2D bright-field TEM image used for volume reconstruction of the sample shows the pores size varying from 10 to 50 nm. Furthermore, reflectivity measurements show that the 35% reflectivity of the starting silicon wafer drops to 0.1% recorded for more than 10 μm long PSiNWs. Models based on cone shape of nanowires located in a circular and rectangular bases were used to calculate the reflectance employing the Transfert Matrix Formalism (TMF) of the PSiNWs layer. Using TMF, the Bruggeman model was used to calculate the refractive index of PSiNWs layer. The calculated reflectance using circular cone shape fits better the measured reflectance for PSiNWs. The remarkable decrease in optical reflectivity indicates that PSiNWs is a good antireflective layer and have a great potential to be utilized in radial or coaxial p-n heterojunction solar cells that could provide orthogonal photon absorption and enhanced carrier collection. ©2012 Optical Society of America.

  3. Tracking and Vertexing for the Heavy Photon Search Experiment

    Science.gov (United States)

    Uemura, Sho; HPS Collaboration

    2015-04-01

    The Heavy Photon Search (HPS) requires precision tracking and vertexing of e+e- pairs against a high background in a difficult experimental environment. The silicon vertex tracker (SVT) for HPS uses actively cooled silicon microstrip sensors with fast readout electronics. To maximize acceptance and vertex resolution with a relatively small detector, the SVT operates directly downstream of the target, close to the beam line, and inside of a dipole magnet. This talk presents the design and performance of the HPS SVT.

  4. Compact Quantum Random Number Generator with Silicon Nanocrystals Light Emitting Device Coupled to a Silicon Photomultiplier

    Science.gov (United States)

    Bisadi, Zahra; Acerbi, Fabio; Fontana, Giorgio; Zorzi, Nicola; Piemonte, Claudio; Pucker, Georg; Pavesi, Lorenzo

    2018-02-01

    A small-sized photonic quantum random number generator, easy to be implemented in small electronic devices for secure data encryption and other applications, is highly demanding nowadays. Here, we propose a compact configuration with Silicon nanocrystals large area light emitting device (LED) coupled to a Silicon photomultiplier to generate random numbers. The random number generation methodology is based on the photon arrival time and is robust against the non-idealities of the detector and the source of quantum entropy. The raw data show high quality of randomness and pass all the statistical tests in national institute of standards and technology tests (NIST) suite without a post-processing algorithm. The highest bit rate is 0.5 Mbps with the efficiency of 4 bits per detected photon.

  5. Compact Quantum Random Number Generator with Silicon Nanocrystals Light Emitting Device Coupled to a Silicon Photomultiplier

    Directory of Open Access Journals (Sweden)

    Zahra Bisadi

    2018-02-01

    Full Text Available A small-sized photonic quantum random number generator, easy to be implemented in small electronic devices for secure data encryption and other applications, is highly demanding nowadays. Here, we propose a compact configuration with Silicon nanocrystals large area light emitting device (LED coupled to a Silicon photomultiplier to generate random numbers. The random number generation methodology is based on the photon arrival time and is robust against the non-idealities of the detector and the source of quantum entropy. The raw data show high quality of randomness and pass all the statistical tests in national institute of standards and technology tests (NIST suite without a post-processing algorithm. The highest bit rate is 0.5 Mbps with the efficiency of 4 bits per detected photon.

  6. Wavelength Selective 3D Topology Optimized Photonic Crystal Devices

    DEFF Research Database (Denmark)

    Frandsen, Lars Hagedorn; Elesin, Yuriy; Sigmund, Ole

    2013-01-01

    A compact photonic crystal drop filter has been designed using 3D topology optimization and fabricated in silicon-on-insulator material. Measurements and modeling are in excellent agreement showing a low-loss ~11nm 3dB bandwidth of the filter.......A compact photonic crystal drop filter has been designed using 3D topology optimization and fabricated in silicon-on-insulator material. Measurements and modeling are in excellent agreement showing a low-loss ~11nm 3dB bandwidth of the filter....

  7. Gamma spectroscopy and optoelectronic imaging with hybrid photon detector

    CERN Document Server

    D'Ambrosio, C; Piedigrossi, D; Rosso, E; Cenceelli, V; De Notaristefani, F; Masini, Gérald; Puertolas, D; Cindolo, F; Mares, J A; Nikl, M; Abreu, M; Rato-Mendes, P; Sousa, P

    2003-01-01

    Hybrid Photon Detectors (HPD) detect light via photocathodes and accelerate the emitted photoelectrons by an electric field towards silicon PIN-anodes, where they are absorbed and generate electronic signals. We have developed two specific types of HPDs: (1) Hybrid photomultiplier tubes for photon counting and gamma spectroscopy; (2) Imaging silicon pixel array tubes for optoelectronic cameras. This paper will illustrate the main achievements, which we obtained in the last years, and will describe and discuss our present main R&D efforts, in particular, in the biomedical imaging field. (27 refs).

  8. Resonance formation in photon-photon collisions

    Energy Technology Data Exchange (ETDEWEB)

    Gidal, G.

    1988-08-01

    Recent experimental progress on resonance formation in photon-photon collisions is reviewed with particular emphasis on the pseudoscalar and tensor nonents and on the ..gamma gamma..* production of spin-one resonances. 37 refs., 17 figs., 5 tabs.

  9. Lifetime and Path Length of the Virtual Particle

    International Nuclear Information System (INIS)

    Lyuboshitz, V.L.; Lyuboshitz, V.V.

    2005-01-01

    The concepts of the lifetime and path length of a virtual particle are introduced. It is shown that, near the mass surface of the real particle, these quantities constitute a 4-vector. At very high energies, the virtual particle can propagate over considerable (even macroscopic) distances. The formulas for the lifetime and path length of an ultrarelativistic virtual electron in the process of bremsstrahlung in the Coulomb field of a nucleus are obtained. The lifetime and path length of the virtual photon at its conversion into an electron-positron pair are discussed. The connection between the path length of the virtual particle and the coherence length (formation length) is analyzed

  10. Quasiperiodic one-dimensional photonic crystals with adjustable multiple photonic bandgaps.

    Science.gov (United States)

    Vyunishev, Andrey M; Pankin, Pavel S; Svyakhovskiy, Sergey E; Timofeev, Ivan V; Vetrov, Stepan Ya

    2017-09-15

    We propose an elegant approach to produce photonic bandgap (PBG) structures with multiple photonic bandgaps by constructing quasiperiodic photonic crystals (QPPCs) composed of a superposition of photonic lattices with different periods. Generally, QPPC structures exhibit both aperiodicity and multiple PBGs due to their long-range order. They are described by a simple analytical expression, instead of quasiperiodic tiling approaches based on substitution rules. Here we describe the optical properties of QPPCs exhibiting two PBGs that can be tuned independently. PBG interband spacing and its depth can be varied by choosing appropriate reciprocal lattice vectors and their amplitudes. These effects are confirmed by the proof-of-concept measurements made for the porous silicon-based QPPC of the appropriate design.

  11. Strain-induced Pockels effect in silicon waveguides (Conference Presentation)

    Science.gov (United States)

    Berciano, Mathias; Damas, Pedro; Marcaud, Guillaume; Le Roux, Xavier; Crozat, Paul; Alonso-Ramos, Carlos; Benedikovic, Daniel; Marris-Morini, Delphine; Cassan, Eric; Vivien, Laurent

    2017-05-01

    With the increasing demand of data, current chip-scale communication systems based on metallic interconnects suffer rate limitations and power consumptions. In this context, Silicon photonics has emerged as an alternative by replacing the classical copper interconnects with silicon waveguides while taking advantage of the well-established CMOS foundries techniques to reduce fabrication costs. Silicon is now considered as an excellent candidate for the development of integrated optical functionalities including waveguiding structures, modulators, switches… One of the main challenges of silicon photonics is to reduce the power consumption and the swing voltage of optical silicon modulators while increasing the data rate speed. However, silicon is a centrosymmetric crystal, vanishing the second order nonlinear effect i.e. Pockels effect which is intrinsically a high speed effect. To overcome this limitation, mechanical stresses on silicon to break the crystal symmetry can be used depositing a strained overlayer. In this work, we have studied the effect of the stress layer in the modulation characteristics based on Mach-Zehnder interferometers. The deposition of silicon nitride as the stress layer and its optimization to induce the maximum effect will be presented.

  12. Silicon Nanowires for All-Optical Signal Processing in Optical Communication

    DEFF Research Database (Denmark)

    Pu, Minhao; Hu, Hao; Ji, Hua

    2012-01-01

    and microelectronics. Silicon photonic nanowire waveguides fabricated on silicon-on-insulator (SOI) substrates are crucial elements in nano-photonic integrated circuits. The strong light confinement in nanowires induced by high index contrast SOI material enhances the nonlinear effects in the silicon nanowire core......Silicon (Si), the second most abundant element on earth, has dominated in microelectronics for many decades. It can also be used for photonic devices due to its transparency in the range of optical telecom wavelengths which will enable a platform for a monolithic integration of optics...... such as four-wave mixing (FWM) which is an imperative process for optical signal processing. Since the current mature silicon fabrication technology enables a precise dimension control on nanowires, dispersion engineering can be performed by tailoring nanowire dimensions to realize an efficient nonlinear...

  13. Ultrahigh-efficiency apodized grating coupler using fully etched photonic crystals

    DEFF Research Database (Denmark)

    Ding, Yunhong; Ou, Haiyan; Peucheret, Christophe

    2013-01-01

    We present an efficient method to design apodized grating couplers with Gaussian output profiles for efficient coupling between standard single mode fibers and silicon chips. An apodized grating coupler using fully etched photonic crystal holes on the silicon-on-insulator platform is designed...

  14. Porous silicon: Synthesis and optical properties

    International Nuclear Information System (INIS)

    Naddaf, M.; Awad, F.

    2006-06-01

    Formation of porous silicon by electrochemical etching method of both p and n-type single crystal silicon wafers in HF based solutions has been performed by using three different modes. In addition to DC and pulsed voltage, a novel etching mode is developed to prepare light-emitting porous silicon by applying and holding-up a voltage in gradient steps form periodically, between the silicon wafer and a graphite electrode. Under same equivalent etching conditions, periodic gradient steps voltage etching can yield a porous silicon layer with stronger photoluminescence intensity and blue shift than the porous silicon layer prepared by DC or pulsed voltage etching. It has been found that the holding-up of the applied voltage during the etching process for defined interval of time is another significant future of this method, which highly affects the blue shift. This can be used for tailoring a porous layer with novel properties. The actual mechanism behind the blue shift is not clear exactly, even the experimental observation of atomic force microscope and purist measurements in support with quantum confinement model. It has been seen also from Fourier Transform Infrared study that interplays between O-Si-H and Si-H bond intensities play key role in deciding the efficiency of photoluminescence emission. Study of relative humidity sensing and photonic crystal properties of pours silicon samples has confirmed the advantages of the new adopted etching mode. The sensitivity at room temperature of porous silicon prepared by periodic gradient steps voltage etching was found to be about 70% as compared to 51% and 45% for the porous silicon prepared by DC and pulsed voltage etching, respectively. (author)

  15. RR photons

    CERN Document Server

    Camara, Pablo G; Marchesano, Fernando

    2011-01-01

    Type II string compactifications to 4d generically contain massless Ramond-Ramond U(1) gauge symmetries. However there is no massless matter charged under these U(1)'s, which makes a priori difficult to measure any physical consequences of their existence. There is however a window of opportunity if these RR U(1)'s mix with the hypercharge $U(1)_Y$ (hence with the photon). In this paper we study in detail different avenues by which $U(1)_{RR}$ bosons may mix with D-brane U(1)'s. We concentrate on Type IIA orientifolds and their M-theory lift, and provide geometric criteria for the existence of such mixing, which may occur either via standard kinetic mixing or via the mass terms induced by St\\"uckelberg couplings. The latter case is particularly interesting, and appears whenever D-branes wrap torsional $p$-cycles in the compactification manifold. We also show that in the presence of torsional cycles discrete gauge symmetries and Aharanov-Bohm strings and particles appear in the 4d effective action, and that ty...

  16. Optical properties of 3D macroporous silicon structures

    International Nuclear Information System (INIS)

    Garin, M.; Trifonov, T.; Rodriguez, A.; Marsal, L.F.; Alcubilla, R.

    2008-01-01

    We study the optical properties of three-dimensional (3D) microstructures fabricated by electrochemical etching of macroporous silicon with modulated pore diameter. Optical measurements along the pore axis reveal photonic band gaps which are also confirmed by calculations of photonic band dispersion. We investigate numerically and experimentally the evolution of these gaps as a function of pore diameter modulation. In addition, a subsequent anisotropic etching of macroporous silicon in alkaline solutions allows to achieve pores with new shapes of modulation. We compare the optical characteristics of 3D macroporous structures with and without such anisotropic treatment

  17. Photonic time crystals.

    Science.gov (United States)

    Zeng, Lunwu; Xu, Jin; Wang, Chengen; Zhang, Jianhua; Zhao, Yuting; Zeng, Jing; Song, Runxia

    2017-12-07

    When space (time) translation symmetry is spontaneously broken, the space crystal (time crystal) forms; when permittivity and permeability periodically vary with space (time), the photonic crystal (photonic time crystal) forms. We proposed the concept of photonic time crystal and rewritten the Maxwell's equations. Utilizing Finite Difference Time Domain (FDTD) method, we simulated electromagnetic wave propagation in photonic time crystal and photonic space-time crystal, the simulation results show that more intensive scatter fields can obtained in photonic time crystal and photonic space-time crystal.

  18. Monolithically Integrated Electrically Pumped Continuous-Wave III-V Quantum Dot Light Sources on Silicon

    OpenAIRE

    Liao, M.; Chen, S.; Huo, S.; Chen, S.; Wu, J.; Tang, M.; Kennedy, K.; Li, W.; Kumar, S.; Martin, M.; Baron, T.; Jin, C.; Ross, I.; Seeds, A.; Liu, H.

    2017-01-01

    In this paper, we report monolithically integrated IIIV\\ud quantum dot (QD) light-emitting sources on silicon substrates\\ud for silicon photonics. We describe the first practical InAs/GaAs\\ud QD lasers monolithically grown on an offcut silicon (001) substrate\\ud due to the realization of high quality III-V epilayers on silicon with\\ud low defect density, indicating that the large material dissimilarity\\ud between III-Vs and silicon is no longer a fundamental barrier\\ud limiting monolithic gro...

  19. Broadband infrared photoluminescence in silicon nanowires with high density stacking faults.

    Science.gov (United States)

    Li, Yang; Liu, Zhihong; Lu, Xiaoxiang; Su, Zhihua; Wang, Yanan; Liu, Rui; Wang, Dunwei; Jian, Jie; Lee, Joon Hwan; Wang, Haiyan; Yu, Qingkai; Bao, Jiming

    2015-02-07

    Making silicon an efficient light-emitting material is an important goal of silicon photonics. Here we report the observation of broadband sub-bandgap photoluminescence in silicon nanowires with a high density of stacking faults. The photoluminescence becomes stronger and exhibits a blue shift under higher laser powers. The super-linear dependence on excitation intensity indicates a strong competition between radiative and defect-related non-radiative channels, and the spectral blue shift is ascribed to the band filling effect in the heterostructures of wurtzite silicon and cubic silicon created by stacking faults.

  20. Ultrafast photon number resolving detector with a temperature stabilized si multi pixel photon counter

    Energy Technology Data Exchange (ETDEWEB)

    Song, Minsoo; Hong, Eugene; Won, Eunil; Yoon, Tai Hyun [Korea Univ., Seoul (Korea, Republic of)

    2008-11-15

    Quantum information science has been rapidly progressed and matured and matured thanks to the recent developments of the single photon detection technologies. Single photon detectors such as a Si avalanche photo diode(APD)in the infrared, an InGaAs/InP APD in the telecommunication band, and a super conducting transient edge sensor(TES)in the broad region of the spectrum have been widely used. Single photon detectors, however, operating at the ultraviolet to visible (370nm∼800nm)regions has not been actively investigated partly due to the lack of single photon and/or entangled photon sources and the lack of solid state single photon detectors. In this paper, we investigate the single photon detection characteristics of a Si multi pixel photon counter(MPPC), which has a high spectral responsivity between 300nm to 800nm, as a photon number resolving solid state detector. Figure 1 shows the schematic diagram of the single photon detection set up at 399nm by using a temperature stabilized Si MPPC. The output beam of the laser being properly attenuated is directed to the MPPC module, at which fixed number of photo electrons corresponding to incident individual photon are generated at Geiger mode of the Si APD pixels. The detected photo current is converted into a digital signal by using a fast analog to digital converter and a digital oscilloscope stores the time sequence of the photo currents. Figure 2 shows the accumulated charges collected by MPPC at∼10.deg.C showing a clear single photon and two photons peaks, respectively, separated by ∼5 sigma of the coincidence counts at the two output ports of a Mach Zender interferometer as a function of optical path length difference. The research was supported by Seoul R and BD program(NT070127)and by the KRISS.

  1. Ultrafast photon number resolving detector with a temperature stabilized si multi pixel photon counter

    International Nuclear Information System (INIS)

    Song, Minsoo; Hong, Eugene; Won, Eunil; Yoon, Tai Hyun

    2008-01-01

    Quantum information science has been rapidly progressed and matured and matured thanks to the recent developments of the single photon detection technologies. Single photon detectors such as a Si avalanche photo diode(APD)in the infrared, an InGaAs/InP APD in the telecommunication band, and a super conducting transient edge sensor(TES)in the broad region of the spectrum have been widely used. Single photon detectors, however, operating at the ultraviolet to visible (370nm∼800nm)regions has not been actively investigated partly due to the lack of single photon and/or entangled photon sources and the lack of solid state single photon detectors. In this paper, we investigate the single photon detection characteristics of a Si multi pixel photon counter(MPPC), which has a high spectral responsivity between 300nm to 800nm, as a photon number resolving solid state detector. Figure 1 shows the schematic diagram of the single photon detection set up at 399nm by using a temperature stabilized Si MPPC. The output beam of the laser being properly attenuated is directed to the MPPC module, at which fixed number of photo electrons corresponding to incident individual photon are generated at Geiger mode of the Si APD pixels. The detected photo current is converted into a digital signal by using a fast analog to digital converter and a digital oscilloscope stores the time sequence of the photo currents. Figure 2 shows the accumulated charges collected by MPPC at∼10.deg.C showing a clear single photon and two photons peaks, respectively, separated by ∼5 sigma of the coincidence counts at the two output ports of a Mach Zender interferometer as a function of optical path length difference. The research was supported by Seoul R and BD program(NT070127)and by the KRISS

  2. Stability and bandgaps of layered perovskites for one- and two-photon water splitting

    DEFF Research Database (Denmark)

    Castelli, Ivano Eligio; García Lastra, Juan Maria; Hüser, Falco

    2013-01-01

    in the Ruddlesden–Popper phase of the layered perovskite structure. Based on screening criteria for the stability, bandgaps and band edge positions, we suggest 20 new materials for the light harvesting photo-electrode of a one-photon water splitting device and 5 anode materials for a two-photon device with silicon...

  3. Plasmonic and silicon spherical nanoparticle antireflective coatings.

    Science.gov (United States)

    Baryshnikova, K V; Petrov, M I; Babicheva, V E; Belov, P A

    2016-03-01

    Over the last decade, plasmonic antireflecting nanostructures have been extensively studied to be utilized in various optical and optoelectronic systems such as lenses, solar cells, photodetectors, and others. The growing interest to all-dielectric photonics as an alternative optical technology along with plasmonics motivates us to compare antireflective properties of plasmonic and all-dielectric nanoparticle coatings based on silver and crystalline silicon respectively. Our simulation results for spherical nanoparticles array on top of amorphous silicon show that both silicon and silver coatings demonstrate strong antireflective properties in the visible spectral range. For the first time, we show that zero reflectance from the structure with silicon coatings originates from the destructive interference of electric- and magnetic-dipole responses of nanoparticle array with the wave reflected from the substrate, and we refer to this reflection suppression as substrate-mediated Kerker effect. We theoretically compare the silicon and silver coating effectiveness for the thin-film photovoltaic applications. Silver nanoparticles can be more efficient, enabling up to 30% increase of the overall absorbance in semiconductor layer. Nevertheless, silicon coatings allow up to 64% absorbance increase in the narrow band spectral range because of the substrate-mediated Kerker effect, and band position can be effectively tuned by varying the nanoparticles sizes.

  4. Hybrid III-V Silicon Lasers

    Science.gov (United States)

    Bowers, John

    2014-03-01

    Abstract: A number of important breakthroughs in the past decade have focused attention on Si as a photonic platform. We review here recent progress in this field, focusing on efforts to make lasers, amplifiers, modulators and photodetectors on or in silicon. We also describe optimum quantum well design and distributed feedback cavity design to reduce the threshold and increase the efficiency and power output. The impact active silicon photonic integrated circuits could have on interconnects, telecommunications and on silicon electronics is reviewed. Biography: John Bowers holds the Fred Kavli Chair in Nanotechnology, and is the Director of the Institute for Energy Efficiency and a Professor in the Departments of Electrical and Computer Engineering and Materials at UCSB. He is a cofounder of Aurrion, Aerius Photonics and Calient Networks. Dr. Bowers received his M.S. and Ph.D. degrees from Stanford University and worked for AT&T Bell Laboratories and Honeywell before joining UC Santa Barbara. Dr. Bowers is a member of the National Academy of Engineering and a fellow of the IEEE, OSA and the American Physical Society. He is a recipient of the OSA/IEEE Tyndall Award, the OSA Holonyak Prize, the IEEE LEOS William Streifer Award and the South Coast Business and Technology Entrepreneur of the Year Award. He and coworkers received the EE Times Annual Creativity in Electronics (ACE) Award for Most Promising Technology for the hybrid silicon laser in 2007. Bowers' research is primarily in optoelectronics and photonic integrated circuits. He has published ten book chapters, 600 journal papers, 900 conference papers and has received 54 patents. He has published 180 invited papers and conference papers, and given 16 plenary talks at conferences. As well as Chong Zhang.

  5. An Educational Kit Based On a Modular Silicon Photomultiplier System

    International Nuclear Information System (INIS)

    Caccia, Massimo; Chmill, Valery; Ebolese, Amedeo; Martemyanov, Alexander; Risigo, Fabio; Santoro, Romualdo; Locatelli, Marco; Pieracci, Maura; Tintori, Carlo

    2013-06-01

    Silicon Photo-Multipliers (SiPM) are state of the art light detectors with unprecedented single photon sensitivity and photon number resolving capability, representing a breakthrough in several fundamental and applied Science domains. An educational experiment based on a SiPM set-up is proposed in this article, guiding the student towards a comprehensive knowledge of this sensor technology while experiencing the quantum nature of light and exploring the statistical properties of the light pulses emitted by a LED. (authors)

  6. Three-dimensional photonic crystals created by single-step multi-directional plasma etching.

    Science.gov (United States)

    Suzuki, Katsuyoshi; Kitano, Keisuke; Ishizaki, Kenji; Noda, Susumu

    2014-07-14

    We fabricate 3D photonic nanostructures by simultaneous multi-directional plasma etching. This simple and flexible method is enabled by controlling the ion-sheath in reactive-ion-etching equipment. We realize 3D photonic crystals on single-crystalline silicon wafers and show high reflectance (>95%) and low transmittance (photonic bandgap. Moreover, our method simply demonstrates Si-based 3D photonic crystals that show the photonic bandgap effect in a shorter wavelength range around 0.6 μm, where further fine structures are required.

  7. Electrically tunable Yb-doped fiber laser based on a liquid crystal photonic bandgap fiber device

    DEFF Research Database (Denmark)

    Olausson, Christina Bjarnal Thulin; Scolari, Lara; Wei, Lei

    2010-01-01

    We demonstrate electrical tunability of a fiber laser using a liquid crystal photonic bandgap fiber. Tuning of the laser is achieved by combining the wavelength filtering effect of a tunable liquid crystal photonic bandgap fiber device with an ytterbium-doped photonic crystal fiber. We fabricate...... an all-spliced laser cavity based on the liquid crystal photonic bandgap fiber mounted on a silicon assembly, a pump/signal combiner with single-mode signal feed-through and an ytterbium-doped photonic crystal fiber. The laser cavity produces a single-mode output and is tuned in the range 1040-1065 nm...

  8. 2D photonic crystal and its angular reflective azimuthal spectrum

    Science.gov (United States)

    Senderakova, Dagmar; Drzik, Milan; Tomekova, Juliana

    2016-12-01

    Contemporary, attention is paid to photonic crystals, which can strongly modify light propagation through them and enable a controllable light manipulation. The contribution is focused on a sub-wavelength 2D structure formed by Al2O3 layer on silicon substrate, patterned with periodic hexagonal lattice of deep air holes. Using various laser sources of light at single wavelength, azimuthal angle dependence of the mirror-like reflected light intensity was recorded photo-electrically. The results obtained can be used to sample the band-structure of leaky modes of the photonic crystal more reliably and help us to map the photonic dispersion diagram.

  9. Density of oxidation-induced stacking faults in damaged silicon

    NARCIS (Netherlands)

    Kuper, F.G.; Hosson, J.Th.M. De; Verwey, J.F.

    1986-01-01

    A model for the relation between density and length of oxidation-induced stacking faults on damaged silicon surfaces is proposed, based on interactions of stacking faults with dislocations and neighboring stacking faults. The model agrees with experiments.

  10. Silicone chain extender

    DEFF Research Database (Denmark)

    2015-01-01

    The present invention relates to a silicone chain extender, more particularly a chain extender for silicone polymers and copolymers, to a chain extended silicone polymer or copolymer and to a functionalized chain extended silicone polymer or copolymer, to a method for the preparation thereof...

  11. Integrated nanophotonic frequency shifter on the silicon-organic hybrid (SOH) platform for laser vibrometry

    International Nuclear Information System (INIS)

    Lauermann, M.; Weimann, C.; Palmer, R.; Schindler, P. C.; Koeber, S.; Freude, W.; Koos, C.; Rembe, C.

    2014-01-01

    We demonstrate a waveguide-based frequency shifter on the silicon photonic platform, enabling frequency shifts up to 10 GHz. The device is realized by silicon-organic hybrid (SOH) integration. Temporal shaping of the drive signal allows the suppression of spurious side-modes by more than 23 dB

  12. Nonlinear Optical Functions in Crystalline and Amorphous Silicon-on-Insulator Nanowires

    DEFF Research Database (Denmark)

    Baets, R.; Kuyken, B.; Liu, X.

    2012-01-01

    Silicon-on-Insulator nanowires provide an excellent platform for nonlinear optical functions in spite of the two-photon absorption at telecom wavelengths. Work on both crystalline and amorphous silicon nanowires is reviewed, in the wavelength range of 1.5 to 2.5 µm....

  13. Silicon plasmonics at midinfrared using silicon-insulator-silicon platform

    Science.gov (United States)

    Gamal, Rania; Shafaay, Sarah; Ismail, Yehea; Swillam, Mohamed A.

    2017-01-01

    We propose devices based on doped silicon. Doped silicon is designed to act as a plasmonic medium in the midinfrared (MIR) range. The surface plasmon frequency of the doped silicon can be tuned within the MIR range, which gives rise to useful properties in the material's dispersion. We propose various plasmonic configurations that can be utilized for silicon on-chip applications in MIR. These devices have superior performance over conventional silicon devices and provide unique functionalities such as 90-sharp degree bends, T- and X-junction splitters, and stubs. These devices are CMOS-compatible and can be easily integrated with other electronic devices. In addition, the potential for biological and environmental sensing using doped silicon nanowires is demonstrated.

  14. Photonic Crystals Towards Nanoscale Photonic Devices

    CERN Document Server

    Lourtioz, Jean-Michel; Berger, Vincent; Gérard, Jean-Michel; Maystre, Daniel; Tchelnokov, Alexis

    2005-01-01

    Just like the periodical crystalline potential in solid-state crystals determines their properties for the conduction of electrons, the periodical structuring of photonic crystals leads to envisioning the possibility of achieving a control of the photon flux in dielectric and metallic materials. The use of photonic crystals as a cage for storing, filtering or guiding light at the wavelength scale thus paves the way to the realisation of optical and optoelectronic devices with ultimate properties and dimensions. This should contribute toward meeting the demands for a greater miniaturisation that the processing of an ever increasing number of data requires. Photonic Crystals intends at providing students and researchers from different fields with the theoretical background needed for modelling photonic crystals and their optical properties, while at the same time presenting the large variety of devices, from optics to microwaves, where photonic crystals have found applications. As such, it aims at building brid...

  15. Photonic Crystals Towards Nanoscale Photonic Devices

    CERN Document Server

    Lourtioz, Jean-Michel; Berger, Vincent; Gérard, Jean-Michel; Maystre, Daniel; Tchelnokov, Alexei; Pagnoux, Dominique

    2008-01-01

    Just like the periodical crystalline potential in solid state crystals determines their properties for the conduction of electrons, the periodical structuring of photonic crystals leads to envisioning the possibility of achieving a control of the photon flux in dielectric and metallic materials. The use of photonic crystals as cages for storing, filtering or guiding light at the wavelength scale paves the way to the realization of optical and optoelectronic devices with ultimate properties and dimensions. This will contribute towards meeting the demands for greater miniaturization imposed by the processing of an ever increasing number of data. Photonic Crystals will provide students and researchers from different fields with the theoretical background required for modelling photonic crystals and their optical properties, while at the same time presenting the large variety of devices, ranging from optics to microwaves, where photonic crystals have found application. As such, it aims at building bridges between...

  16. Photonic crystals with active organic materials

    Science.gov (United States)

    Wu, Yeheng

    The concept of photonic crystals, which involves periodically arranged dielectrics that form a new type of material having novel photonic properties, was first proposed about two decades ago. Since then, a number of applications in photonic technology have been explored. Specifically, organic and hybrid photonic crystals are promising because of the unique advantages of the organic materials. A one-dimensional (1D) photonic crystal (multilayer) has high reflectance across a certain wavelength range. We report on studies of 1D multilayer polymer films that were fabricated using spin-coating, free film stacking, and co-extrusion techniques. For example, a stack fabricated by placing a laser dye-doped gain medium between two multilayer reflecting polymer films forms a micro-resonator laser or distributed Bragg laser. The resulting laser system is made entirely of plastic and is only several tens of micrometers in thickness. When the gain, a dye-doped medium, comprises one type of a two-type multilayer film, it results a laser exhibiting distributed feedback. At the edge of the photonic band, the group velocity becomes small and the density of photon states becomes high, which leads to laser emission. Such distributed feedback lasers were fabricated using the co-extrusion technique. The refractive indices and the photonic lattice determine the photonic band gap, which can be tuned by changing these parameters. Materials with Kerr nonlinearity exhibit a change in refractive index depending on the incident intensity of the light. To demonstrate such switching, electrochemical etching techniques on silicon wafers were used to form two-dimensional (2D) photonic crystals. By incorporating the nonlinear organic material into the 2D structure, we have made all-optical switches. The reflection of a beam from the 2D photonic crystal can be controlled by another beam because it induces a refractive index change in the active material by altering the reflection band. A mid

  17. Simulation and Fabrication of a Photonic Crystal Mach-Zehnder Interferometer

    OpenAIRE

    Holmen, Lars Grønmark

    2016-01-01

    Photonic crystals (PhC) are materials with extraordinary optical properties in terms of dispersion characteristics and light confinement, which make them a promising platform for photonic integrated circuits. This study aims at designing, simulating and fabricating a Mach-Zehnder interferometer (MZI) implemented in an air-hole silicon photonic crystal slab, with a specific application as a label-free optical biosensor. Computer simulations are performed in both two and three dimensions us...

  18. Nuclear photonics

    Science.gov (United States)

    Habs, D.; Günther, M. M.; Jentschel, M.; Thirolf, P. G.

    2012-07-01

    With the planned new γ-beam facilities like MEGa-ray at LLNL (USA) or ELI-NP at Bucharest (Romania) with 1013 γ/s and a band width of ΔEγ/Eγ≈10-3, a new era of γ beams with energies up to 20MeV comes into operation, compared to the present world-leading HIγS facility at Duke University (USA) with 108 γ/s and ΔEγ/Eγ≈3ṡ10-2. In the long run even a seeded quantum FEL for γ beams may become possible, with much higher brilliance and spectral flux. At the same time new exciting possibilities open up for focused γ beams. Here we describe a new experiment at the γ beam of the ILL reactor (Grenoble, France), where we observed for the first time that the index of refraction for γ beams is determined by virtual pair creation. Using a combination of refractive and reflective optics, efficient monochromators for γ beams are being developed. Thus, we have to optimize the total system: the γ-beam facility, the γ-beam optics and γ detectors. We can trade γ intensity for band width, going down to ΔEγ/Eγ≈10-6 and address individual nuclear levels. The term "nuclear photonics" stresses the importance of nuclear applications. We can address with γ-beams individual nuclear isotopes and not just elements like with X-ray beams. Compared to X rays, γ beams can penetrate much deeper into big samples like radioactive waste barrels, motors or batteries. We can perform tomography and microscopy studies by focusing down to μm resolution using Nuclear Resonance Fluorescence (NRF) for detection with eV resolution and high spatial resolution at the same time. We discuss the dominating M1 and E1 excitations like the scissors mode, two-phonon quadrupole octupole excitations, pygmy dipole excitations or giant dipole excitations under the new facet of applications. We find many new applications in biomedicine, green energy, radioactive waste management or homeland security. Also more brilliant secondary beams of neutrons and positrons can be produced.

  19. Refractive index contrast in porous silicon multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Nava, R.; Mora, M.B. de la; Tagueena-Martinez, J. [Centro de Investigacion en Energia, Universidad Nacional Autonoma de Mexico, Temixco, Morelos (Mexico); Rio, J.A. del [Centro de Investigacion en Energia, Universidad Nacional Autonoma de Mexico, Temixco, Morelos (Mexico); Centro Morelense de Innovacion y Transferencia Tecnologica, Consejo de Ciencia y Tecnologia del Estado de Morelos (Mexico)

    2009-07-15

    Two of the most important properties of a porous silicon multilayer for photonic applications are flat interfaces and a relative large refractive index contrast between layers in the optical wavelength range. In this work, we studied the effect of the current density and HF electrolyte concentration on the refractive index of porous silicon. With the purpose of increasing the refractive index contrast in a multilayer, the refractive index of porous silicon produced at low current was studied in detail. The current density applied to produce the low porosity layers was limited in order to keep the electrolyte flow through the multilayer structure and to avoid deformation of layer interfaces. We found that an electrolyte composed of hydrofluoric acid, ethanol and glycerin in a ratio of 3:7:1 gives a refractive index contrast around 1.3/2.8 at 600 nm. Several multilayer structures with this refractive index contrast were fabricated, such as dielectric Bragg mirrors and microcavities. Reflectance spectra of the structures show the photonic quality of porous silicon multilayers produced under these electrochemical conditions. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Topology Optimised Broadband Photonic Crystal Y-Splitter

    DEFF Research Database (Denmark)

    Borel, Peter Ingo; Frandsen, Lars Hagedorn; Harpøth, Anders

    2005-01-01

    A planar photonic crystal waveguide Y-splitter that exhibits large-bandwidth low-loss 3 dB splitting for TE-polarised light has been fabricated in silicon-on-insulator material. The high performance is achieved by utilising topology optimisation to design the Y-junction and by using topology...

  1. Photonic crystal waveguides based on an antiresonant reflecting platform

    DEFF Research Database (Denmark)

    Lavrinenko, Andrei; Frandsen, Lars Hagedorn; Fage-Pedersen, Jacob

    2005-01-01

    We apply the antiresonant reflecting layers arrangement to silicon-on-insulator based photonic crystal waveguides. Several layered structures with different combinations of materials (Si-SiO2, Si3N4-SiO2) and layer topology have been analysed. Numerical modelling using 3D Finite-Difference Time...

  2. Photon scanning tunneling microscope in combination with a force microscope

    NARCIS (Netherlands)

    Moers, M.H.P.; Moers, M.H.P.; Tack, R.G.; van Hulst, N.F.; Bölger, B.; Bölger, B.

    1994-01-01

    The simultaneous operation of a photon scanning tunneling microscope with an atomic force microscope is presented. The use of standard atomic force silicon nitride cantilevers as near-field optical probes offers the possibility to combine the two methods. Vertical forces and torsion are detected

  3. Microelectromechanical pump utilizing porous silicon

    Science.gov (United States)

    Lantz, Jeffrey W [Albuquerque, NM; Stalford, Harold L [Norman, OK

    2011-07-19

    A microelectromechanical (MEM) pump is disclosed which includes a porous silicon region sandwiched between an inlet chamber and an outlet chamber. The porous silicon region is formed in a silicon substrate and contains a number of pores extending between the inlet and outlet chambers, with each pore having a cross-section dimension about equal to or smaller than a mean free path of a gas being pumped. A thermal gradient is provided along the length of each pore by a heat source which can be an electrical resistance heater or an integrated circuit (IC). A channel can be formed through the silicon substrate so that inlet and outlet ports can be formed on the same side of the substrate, or so that multiple MEM pumps can be connected in series to form a multi-stage MEM pump. The MEM pump has applications for use in gas-phase MEM chemical analysis systems, and can also be used for passive cooling of ICs.

  4. Enhancement of broadband optical absorption in photovoltaic devices by band-edge effect of photonic crystals.

    Science.gov (United States)

    Tanaka, Yoshinori; Kawamoto, Yosuke; Fujita, Masayuki; Noda, Susumu

    2013-08-26

    We numerically investigate broadband optical absorption enhancement in thin, 400-nm thick microcrystalline silicon (µc-Si) photovoltaic devices by photonic crystals (PCs). We realize absorption enhancement by coupling the light from the free space to the large area resonant modes at the photonic band-edge induced by the photonic crystals. We show that multiple photonic band-edge modes can be produced by higher order modes in the vertical direction of the Si photovoltaic layer, which can enhance the absorption on multiple wavelengths. Moreover, we reveal that the photonic superlattice structure can produce more photonic band-edge modes that lead to further optical absorption. The absorption average in wavelengths of 500-1000 nm weighted to the solar spectrum (AM 1.5) increases almost twice: from 33% without photonic crystal to 58% with a 4 × 4 period superlattice photonic crystal; our result outperforms the Lambertian textured structure.

  5. Prospects of Mid Infrared Silicon Raman Laser

    Science.gov (United States)

    Jalali, Bahram

    2006-03-01

    Mid wave infrared (MWIR) lasers in the wavelength range of 2-5μm form an important tool for free space communications, bio-chemical detection and certain medical applications. Most organic chemicals and biological agents have unique signatures in the MWIR and can be detected using these lasers. The strong water absorption peak at 2.9μm renders such a laser attractive for surgery and dentistry. Solid state lasers comprising OPO-based nonlinear frequency converters and Raman lasers have been the popular choice for these applications. However, the low damage threshold, poor thermal conductivity and high cost limit the commercial availability of these sources. The recent demonstration of the first silicon Raman laser in 2004 combined with excellent transmission of silicon in the mid-IR suggests that silicon should be considered as a MWIR Raman crystal. In the near IR, where current silicon Raman lasers operate, free carriers that are generated by two photon absorption (TPA) create severe losses. TPA vanishes in the MWIR regime (λ > 2.25μm), hence eliminating the main problem with silicon Raman lasers. This combined with (i) the unsurpassed quality of commercial silicon crystals, (ii) the low cost and wide availability of the material, (iii) extremely high optical damage threshold of 1-4 GW/cm2 (depending on the crystal resistivity), and (iv) excellent thermal conductivity renders silicon a very attractive Raman crystal. Moreover, integrated waveguide and resonator technologies can lead to device miniaturization. This talk discusses the MWIR silicon laser and its applications.

  6. Studying signal collection in the punch-through protection area of a silicon micro-strip sensor using a micro-focused X-ray beam

    CERN Document Server

    Poley, Anne-luise; The ATLAS collaboration

    2018-01-01

    For the Phase-II Upgrade of the ATLAS detector, a new, all-silicon tracker will be constructed in order to cope with the increased track density and radiation level of the High-Luminosity Large Hadron Collider. While silicon strip sensors are designed to minimise the fraction of dead material and maximise the active area of a sensor, concessions must be made to the requirements of operating a sensor in a particle physics detector. Sensor geometry features like the punch-through protection deviate from the standard sensor architecture and thereby affect the charge collection in that area. In order to study the signal collection of silicon strip sensors over their punch-through-protection area, ATLAS silicon strip sensors were scanned with a micro-focused X-ray beam at the Diamond Light Source. Due to the highly focused X-ray beam ($\\unit[2\\times3]{\\upmu\\text{m}}^2$) and the short average path length of an electron after interaction with an X-ray photon ($\\unit[\\leq2]{\\upmu\\text{m}}$), local signal collection i...

  7. Oxide-free hybrid silicon nanowires: From fundamentals to applied nanotechnology

    Science.gov (United States)

    Bashouti, Muhammad Y.; Sardashti, Kasra; Schmitt, Sebastian W.; Pietsch, Matthias; Ristein, Jürgen; Haick, Hossam; Christiansen, Silke H.

    2013-02-01

    The ability to control physical properties of silicon nanowires (Si NWs) by designing their surface bonds is important for their applicability in devices in the areas of nano-electronics, nano-photonics, including photovoltaics and sensing. In principle a wealth of different molecules can be attached to the bare Si NW surface atoms to create e.g. Si-O, Si-C, Si-N, etc. to mention just the most prominent ones. Si-O bond formation, i.e. oxidation usually takes place automatically as soon as Si NWs are exposed to ambient conditions and this is undesired is since a defective oxide layer (i.e. native silicon dioxide - SiO2) can cause uncontrolled trap states in the band gap of silicon. Surface functionalization of Si NW surfaces with the aim to avoid oxidation can be carried out by permitting e.g. Si-C bond formation when alkyl chains are covalently attached to the Si NW surfaces by employing a versatile two-step chlorination/alkylation process that does not affect the original length and diameter of the NWs. Termination of Si NWs with alkyl molecules through covalent Si-C bonds can provide long term stability against oxidation of the Si NW surfaces. The alkyl chain length determines the molecular coverage of Si NW surfaces and thus the surface energy and next to simple Si-C bonds even bond types such as Cdbnd C and Ctbnd C can be realized. When integrating differently functionalized Si NWs in functional devices such as field effect transistors (FETs) and solar cells, the physical properties of the resultant devices vary.

  8. Fast, deep record length, time-resolved visible spectroscopy of plasmas using fiber grids

    Science.gov (United States)

    Brockington, Samuel; Case, Andrew; Cruz, Edward; Witherspoon, F. Douglas; Horton, Robert; Klauser, Ruth; Hwang, D. Q.

    2016-10-01

    HyperV Technologies is developing a fiber-coupled, deep-record-length, low-light camera head for performing high time resolution spectroscopy on visible emission from plasma events. New solid-state Silicon Photo-Multiplier (SiPM) chips are capable of single photon event detection and high speed data acquisition. By coupling the output of a spectrometer to an imaging fiber bundle connected to a bank of amplified SiPMs, time-resolved spectroscopic imagers of 100 to 1,000 pixels can be constructed. Target pixel performance is 10 Megaframes/sec with record lengths of up to 256,000 frames yielding 25.6 milliseconds of record at10 Megasamples/sec resolution. Pixel resolutions of 8 to 12 bits are pos- sible. Pixel pitch can be refined by using grids of 100 μm to 1000 μm diameter fibers. A prototype 32-pixel spectroscopic imager employing this technique was constructed and successfully tested at the University of California at Davis Compact Toroid Injection Experiment (CTIX) as a full demonstration of the concept. Experimental results will be dis-cussed, along with future plans for the Phase 2 project, and potential applications to plasma experiments . Work supported by USDOE SBIR Grant DE-SC0013801.

  9. Silicon nanochains preparation with hydrothermal synthesis

    International Nuclear Information System (INIS)

    Chen, Y.W.; Tang, Y.H.; Pei, L.Z.; Guo, C.; Lin, L.W.

    2007-01-01

    Silicon nanochains over 1 μm in length and 50-100 nm in diameter have been synthesized by hydrothermal synthesis with silicon powders as start materials and de-ionized water as reaction medium, the growth condition was controlled at 470 deg. C and 9.7 MPa in a sealed reaction kettle. The morphology and microstructure of the production were characterized by transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), selected area electron diffraction (SAED); the results revealed that the silicon nanochains have diamond structure. Energy dispersive X-ray spectrum (EDS) was used to analyze the composition of the final production and the possible growth mechanism of silicon nanochain under supercritical hydrothermal condition was proposed

  10. Near-field probing of photonic crystals

    NARCIS (Netherlands)

    Flück, E.; Hammer, Manfred; Vos, Willem L.; van Hulst, N.F.; Kuipers, L.

    2004-01-01

    Photonic crystals form an exciting new class of optical materials that can greatly affect optical propagation and light emission. As the relevant length scale is smaller than the wavelength of light, sub-wavelength detection forms an important ingredient to obtain full insight in the physical

  11. Rapid diffusion of molybdenum trace contamination in silicon

    International Nuclear Information System (INIS)

    Tobin, S.P.; Greenwald, A.C.; Wolfson, R.G.; Meier, D.L.; Drevinsky, P.J.

    1985-01-01

    Molybdenum contamination has been detected in silicon epitaxial layers and substrate wafers after processing in any one of several epitaxial silicon reactors. Greatly reduced minority carrier diffusion lengths and lifetimes are consistent with Mo concentrations measured by DLTS in the 10 12 and 10 13 cm -3 ranges. Depth profiling of diffusion length and the Mo deep level show much greater penetration than expected from previous reports of Mo as a slow diffuser. The data indicate a lower limit of 10 -8 cm 2 /sec for the diffusion coefficient of Mo in silicon at 1200 0 C, consistent with high diffusivities measured for other transition metals

  12. Photonic crystals: towards nanoscale photonic devices

    National Research Council Canada - National Science Library

    Lourtioz, J.-M

    2005-01-01

    .... From this point of view, the emergence of photonic bandgap materials and photonic crystals at the end of the 1980s can be seen as a revenge to the benefit this time of optics and electromagnetism. In the same way as the periodicity of solid state crystals determines the energy bands and the conduction properties of electrons, the periodical structur...

  13. Photon-photon measurements in CMS

    CERN Document Server

    Chudasama, Ruchi

    2017-01-01

    We discuss the measurement of photon-photon processes using data collected by the CMS experiment in pp collisions at $\\sqrt{s}$ = 7 and 8 TeV and in PbPb collisions at $\\sqrt{s_{_{{\\rm NN}}}}= 5.02$ TeV.

  14. High energy photon-photon collisions

    International Nuclear Information System (INIS)

    Brodsky, S.J.; Zerwas, P.M.

    1994-07-01

    The collisions of high energy photons produced at a electron-positron collider provide a comprehensive laboratory for testing QCD, electroweak interactions and extensions of the standard model. The luminosity and energy of the colliding photons produced by back-scattering laser beams is expected to be comparable to that of the primary e + e - collisions. In this overview, we shall focus on tests of electroweak theory in photon-photon annihilation, particularly γγ → W + W - , γγ → Higgs bosons, and higher-order loop processes, such as γγ → γγ, Zγ and ZZ. Since each photon can be resolved into a W + W minus pair, high energy photon-photon collisions can also provide a remarkably background-free laboratory for studying WW collisions and annihilation. We also review high energy γγ tests of quantum chromodynamics, such as the scaling of the photon structure function, t bar t production, mini-jet processes, and diffractive reactions

  15. Exceptional plasticity of silicon nanobridges

    Energy Technology Data Exchange (ETDEWEB)

    Ishida, Tadashi; Sato, Takaaki; Toshiyoshi, Hiroshi; Collard, Dominique; Fujita, Hiroyuki [University of Tokyo, Institute of Industrial Science, 4-6-1 Komaba Meguro, Tokyo 153-8505 (Japan); Cleri, Fabrizio [Institut d' Electronique Microelectronique et Nanotechnologie (CNRS UMR 8520), Universite de Lille I, Avenue Poincare BP60069 59652 Villeneuve d' Ascq (France); Kakushima, Kuniyuki [Tokyo Institute of Technology, 4259, Nagatsuda, Midori, Yokohama, Kanagawa 226-8502 (Japan); Mita, Makoto [Department of Spacecraft Engineering, Japan Aerospace Exploration Agency, 3-1-1, Yoshinodai, Sagamihara, Kanagawa 229-8510 (Japan); Miyata, Masaki; Itamura, Noriaki; Sasaki, Naruo [Department of Materials and Life Sciences, Seikei University, 3-3-1, Kitamachi, Kichijoji, Musashino, Tokyo 180-8633 (Japan); Endo, Junji, E-mail: tadashii@iis.u-tokyo.ac.jp [FK Optical laboratory, 1-13-4 Nakano Niiza Saitama, 352-0005 (Japan)

    2011-09-02

    The plasticity of covalently bonded materials is a subject at the forefront of materials science, bearing on a wide range of technological and fundamental aspects. However, covalent materials fracture in a brittle manner when the deformation exceeds just a few per cent. It is predicted that a macroscopically brittle material like silicon can show nanoscale plasticity. Here we report the exceptional plasticity observed in silicon nanocontacts ('nanobridges') at room temperature using a special experimental setup combining a transmission electron microscope and a microelectromechanical system. When accounting for surface diffusion, we succeeded in elongating the nanocontact into a wire-like structure, with a fivefold increase in volume, up to more than twenty times the original length. Such a large plasticity was caused by the stress-assisted diffusion and the sliding of the intergranular, amorphous-like material among the nanocrystals.

  16. Photonic crystal light source

    Science.gov (United States)

    Fleming, James G [Albuquerque, NM; Lin, Shawn-Yu [Albuquerque, NM; Bur, James A [Corrales, NM

    2004-07-27

    A light source is provided by a photonic crystal having an enhanced photonic density-of-states over a band of frequencies and wherein at least one of the dielectric materials of the photonic crystal has a complex dielectric constant, thereby producing enhanced light emission at the band of frequencies when the photonic crystal is heated. The dielectric material can be a metal, such as tungsten. The spectral properties of the light source can be easily tuned by modification of the photonic crystal structure and materials. The photonic crystal light source can be heated electrically or other heating means. The light source can further include additional photonic crystals that exhibit enhanced light emission at a different band of frequencies to provide for color mixing. The photonic crystal light source may have applications in optical telecommunications, information displays, energy conversion, sensors, and other optical applications.

  17. Photonic crystal pioneer

    Science.gov (United States)

    Anscombe, Nadya

    2011-08-01

    Over the past ten years, Crystal Fiber, now part of NKT Photonics, has been busy commercializing photonic crystal fibre. Nadya Anscombe finds out about the evolution of the technology and its applications.

  18. Novel technique for reliability testing of silicon integrated circuits

    NARCIS (Netherlands)

    Le Minh, P.; Wallinga, Hans; Woerlee, P.H.; van den Berg, Albert; Holleman, J.

    2001-01-01

    We propose a simple, inexpensive technique with high resolution to identify the weak spots in integrated circuits by means of a non-destructive photochemical process in which photoresist is used as the photon detection tool. The experiment was done to localize the breakdown link of thin silicon

  19. Silicon microbench heater elements for packaging opto-electronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Combs, R.; Keiser, P.; Kleint, K.; Pocha, M.; Patterson, F.; Strand, O.T.

    1995-09-01

    Examples are presented of the application of Lawrence Livermore National Laboratory`s expertise in photonics packaging. Several examples of packaged devices will be described. Particular attention is given to silicon microbenches incorporating heaters and their use in semiconductor optical amplifier fiber pigtailing and packaging.

  20. Photonic crystal fibers

    DEFF Research Database (Denmark)

    Lægsgaard, Jesper; Hansen, K P; Nielsen, M D

    2003-01-01

    Photonic crystal fibers having a complex microstructure in the transverse plane constitute a new and promising class of optical fibers. Such fibers can either guide light through total internal reflection or the photonic bandgap effect, In this paper, we review the different types and applications...... of photonic crystal fibers with particular emphasis on recent advances in the field....

  1. Diffusion Based Photon Mapping

    DEFF Research Database (Denmark)

    Schjøth, Lars; Olsen, Ole Fogh; Sporring, Jon

    2006-01-01

    . To address this problem we introduce a novel photon mapping algorithm based on nonlinear anisotropic diffusion. Our algorithm adapts according to the structure of the photon map such that smoothing occurs along edges and structures and not across. In this way we preserve the important illumination features......, while eliminating noise. We call our method diffusion based photon mapping....

  2. Highly compact asymmetric Mach-Zehnder device based on channel guides in a two-dimensional photonic crystal.

    Science.gov (United States)

    Camargo, Edilson A; Chong, Harold M H; De La Rue, Richard M

    2006-09-01

    We have designed and fabricated a 2D photonic crystal (PhC) asymmetric Mach-Zehnder (M-Z) device structure using W1 channel waveguides oriented along ?K directions in silicon-on-insulator material. The asymmetric structure was designed using a PhC lattice with different filling factors. The asymmetry is obtained as a difference of two periods in the physical path length (DL=2a) between the arms, and it was sufficient to produce a pi phase shift in the region of operation around lambda=1500 nm. The asymmetric M-Z structure is more sensitive than a symmetric M-Z structure to changes in the refractive index and therefore becomes an interesting platform for switching and sensor devices.

  3. Characterization of photonic structures using visible and infrared polarimetry

    Directory of Open Access Journals (Sweden)

    Kral Z.

    2010-06-01

    Full Text Available Photonic Crystals are materials with a spatial periodic variation of the refractive index on the wavelength scale. This confers these materials interesting photonic properties such as the existence of photonic bands and forbidden photon frequency ranges, the photonic band gaps. Among their applications it is worth mentioning the achievement of low-threshold lasers and high-Q resonant cavities. A particular case of the Photonic Crystals is well-known and widely studied since a long time: the periodic thin film coatings. The characterization of thin film coatings is a classical field of study with a very well established knowledge. However, characterization of 2D and 3D photonic crystals needs to be studied in detail as it poses new problems that have to be solved. In this sense, Polarimetry is a specially suited tool given their inherent anisotropy: photonic bands depend strongly on the propagation direction and on polarization. In this work we show how photonic crystal structures can be characterized using polarimetry equipment. We compare the numerical modeling of the interaction of the light polarization with the photonic crystal with the polarimetry measurements. With the S-Matrix formalism, the Mueller matrix of a Photonic Crystal for a given wavelength, angle of incidence and propagation direction can be obtained. We will show that useful information from polarimetry (and also from spectrometry can be obtained when multivariate spectra are considered. We will also compare the simulation results with Polarimetry measurements on different kinds of samples: macroporous silicon photonic crystals in the near-IR range and Laser-Interference-Lithography nanostructured photoresist.

  4. Optimization of planar self-collimating photonic crystals.

    Science.gov (United States)

    Rumpf, Raymond C; Pazos, Javier J

    2013-07-01

    Self-collimation in photonic crystals has received a lot of attention in the literature, partly due to recent interest in silicon photonics, yet no performance metrics have been proposed. This paper proposes a figure of merit (FOM) for self-collimation and outlines a methodical approach for calculating it. Performance metrics include bandwidth, angular acceptance, strength, and an overall FOM. Two key contributions of this work include the performance metrics and identifying that the optimum frequency for self-collimation is not at the inflection point. The FOM is used to optimize a planar photonic crystal composed of a square array of cylinders. Conclusions are drawn about how the refractive indices and fill fraction of the lattice impact each of the performance metrics. The optimization is demonstrated by simulating two spatially variant self-collimating photonic crystals, where one has a high FOM and the other has a low FOM. This work gives optical designers tremendous insight into how to design and optimize robust self-collimating photonic crystals, which promises many applications in silicon photonics and integrated optics.

  5. Clad photon sieve for generating localized hollow beams

    Science.gov (United States)

    Cheng, Yiguang; Tong, Junmin; Zhu, Jiangping; Liu, Junbo; Hu, Song; He, Yu

    2016-02-01

    A novel photon sieve structure called clad photon sieve is proposed to generate localized hollow beams and its design principle and focusing properties are studied. The clad photon sieve is composed of the internal zone and external zone with pinholes being positioned on the dark zones. Pinholes in the internal zone and in the external zone give destructive interference to the focus, leading to localized hollow beams being generated on the focal plane. Focusing properties of clad photon sieve with different focal lengths, zone numbers and modulation factors are also studied by theoretical calculations, numerical simulations and experiments, showing that the central dark spot size can be controlled by the focal length and rings number, and the intensity of the central dark spot varies with different modulation factors related with the internal zone and the external zone. This photon sieve can be useful for trapping and manipulating of particles and cooling of atoms.

  6. A 75 GHz silicon metal-semiconductor-metal Schottky photodiode

    International Nuclear Information System (INIS)

    Alexandrou, S.; Wang, C.; Hsiang, T.Y.; Liu, M.Y.; Chou, S.Y.

    1993-01-01

    The ultrafast characteristics of crystalline-silicon metal-semiconductor-metal (MSM) photodiodes with 300 nm finger width and spacing were measured with a subpicosecond electro-optic sampling system. Electrical responses with full width at half maximum as short as 5.5 and 11 ps, at corresponding 3 dB bandwidths of 75 and 38 GHz, were generated by violet and red photons, respectively. The difference is attributed to the photon penetration depth which is much larger than the diode finger spacing at red, but smaller at violet. Light-intensity dependence was also examined at different wavelengths, indicating a linear relation and a higher sensitivity in the violet. These results not only demonstrated the fastest silicon photodetector reported to date, but also pinpointed the dominant speed-limiting factor of silicon MSM photodiodes. A configuration is suggested to improve the speed of these detectors at long wavelengths

  7. Photon correlation holography.

    Science.gov (United States)

    Naik, Dinesh N; Singh, Rakesh Kumar; Ezawa, Takahiro; Miyamoto, Yoko; Takeda, Mitsuo

    2011-01-17

    Unconventional holography called photon correlation holography is proposed and experimentally demonstrated. Using photon correlation, i.e. intensity correlation or fourth order correlation of optical field, a 3-D image of the object recorded in a hologram is reconstructed stochastically with illumination through a random phase screen. Two different schemes for realizing photon correlation holography are examined by numerical simulations, and the experiment was performed for one of the reconstruction schemes suitable for the experimental proof of the principle. The technique of photon correlation holography provides a new insight into how the information is embedded in the spatial as well as temporal correlation of photons in the stochastic pseudo thermal light.

  8. Up-conversion of crystal oscillator frequency in silicon package by near infrared, ultrashort laser

    Science.gov (United States)

    Ito, Yoshiro; Sato, Fumiya; Shinohe, Yuuki; Tanabe, Rie; Tada, Kozo

    2010-02-01

    Using an ultrashort pulse laser, photon energy of which is smaller than the band gap energy of silicon, machining of substances located at back of a silicon plate should be achievable. To realize this possibility, machining of a silicon substrate as well as machining of gold film on it was carried out using femtosecond laser pulses, wavelength of which lay between 1.5 to 2.5 μm. It is demonstrated that the rare surface of the silicon substrate and the gold film placed at the back of the silicon substrate can be machined with no detectable change on its front surface. Frequency adjustment of crystal oscillator sealed in a silicon package is tried and up-conversion of the frequency is achieved by removing small amount of thin gold film on the crystal with irradiation of 1.5 μm laser pulses through the silicon lid.

  9. Electron and Photon ID

    CERN Document Server

    Hryn'ova, Tetiana; The ATLAS collaboration

    2017-01-01

    The identification of prompt photons and the rejection of background coming mostly from photons from hadron decays relies on the high granularity of the ATLAS calorimeter. The electron identification used in ATLAS for run 2 is based on a likelihood discrimination to separate isolated electron candidates from candidates originating from photon conversions, hadron misidentification and heavy flavor decays. In addition, isolation variables are used as further handles to separate signal and background. Several methods are used to measure with data the efficiency of the photon identification requirements, to cover a broad energy spectrum. At low energy, photons from radiative Z decays are used. In the medium energy range, similarities between electrons and photon showers are exploited using Z->ee decays. At high energy, inclusive photon samples are used. The measurement of the efficiencies of the electron identification and isolation cuts are performed with the data using tag and probe techniques with large statis...

  10. Searching for Heavy Photons with Detached Verices in the Heavy Photon Search Experiment

    Energy Technology Data Exchange (ETDEWEB)

    Szumila-Vance, Holly [Old Dominion Univ., Norfolk, VA (United States); Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States)

    2017-08-01

    The Jefferson Lab Heavy Photon Search (HPS) experiment is searching for a hypothetical massive particle called the heavy photon which could mediate a dark electromagnetic-type force. If heavy photons kinetically mix with Standard Model photons, they may be radiated by electrons scattering from a heavy nucleus and then decay to e+e- pairs. HPS uniquely searches for heavy photons that either decay at the target or a measurable distance after. The experiment utilizes a silicon vertex tracker (SVT) for momentum and vertex reconstruction, together with an electromagnetic calorimeter for measuring particle energies and triggering events. The HPS experiment took its first data during the spring 2015 engineering run using a 1 GeV electron beam incident on a tungsten target and its second data in the spring of 2016 at a beam energy of 2.3 GeV. The 2015 run obtained two days of production data that was used for the first physics results. The analysis of the data was conducted as a blinded analysis by tuning cuts on 10% of the data. This dissertation discusses the displaced vertex search for heavy photons in the 2015 engineering run. It describes the theoretical motivation for looking for heavy photons and provides an overview of the HPS experimental design and performance. The performance details of the experiment are primarily derived from the 2015 engineering run with some discussion from the higher energy running in 2016. This dissertation further discusses the cuts used to optimize the displaced vertex search and the results of the search. The displaced vertex search did not set a limit on the heavy photon but did validate the methodology for conducting the search. Finally, we used the full data set to make projections and guide future analyses.

  11. Optical absorption of silicon nanowires

    International Nuclear Information System (INIS)

    Xu, T.; Lambert, Y.; Krzeminski, C.; Grandidier, B.; Stiévenard, D.; Lévêque, G.; Akjouj, A.; Pennec, Y.; Djafari-Rouhani, B.

    2012-01-01

    We report on simulations and measurements of the optical absorption of silicon nanowires (NWs) versus their diameter. We first address the simulation of the optical absorption based on two different theoretical methods: the first one, based on the Green function formalism, is useful to calculate the scattering and absorption properties of a single or a finite set of NWs. The second one, based on the finite difference time domain (FDTD) method, is well-adapted to deal with a periodic set of NWs. In both cases, an increase of the onset energy for the absorption is found with increasing diameter. Such effect is experimentally illustrated, when photoconductivity measurements are performed on single tapered Si nanowires connected between a set of several electrodes. An increase of the nanowire diameter reveals a spectral shift of the photocurrent intensity peak towards lower photon energies that allow to tune the absorption onset from the ultraviolet radiations to the visible light spectrum.

  12. Silicon: electrochemistry and luminescence

    NARCIS (Netherlands)

    Kooij, Ernst Stefan

    1997-01-01

    The electrochemistry of crystalline and porous silicon and the luminescence from porous silicon has been studied. One chapter deals with a model for the anodic dissolution of silicon in HF solution. In following chapters both the electrochemistry and various ways of generating visible

  13. High index contrast photonics platform

    Science.gov (United States)

    Chu, Sai T.; Little, Brent E.; Hryniewicz, John V.; Johnson, Fred G.; King, Oliver; Gill, Dave; Chen, Wenlu; Chen, Wei

    2005-10-01

    A new low-loss high-index-contrast photonics platform has been developed for integrated optics and microwave photonics. The platform consists of a material system that has an index contrast that is adjustable from 0 to 25% and which is processed using conventional CMOS tools. The platform allows one to four orders of magnitude reduction in the size of optical components compared with conventional planar technologies. As an example, meter long path lengths occupy coils that are millimeters in diameter. Microwave photonic building blocks that are enabled include large bit count programmable delay lines for beam steering and shaping that fit in less than a square centimeter and which have delays controllable from 5 fsec to 10 nsec. Also enabled are arrays of high order tunable filters, a hundred micrometers in size, having linewidths ranging from tens of MHz to tens of GHz. These filters can be tuned over several hundred GHz, and when placed in Vernier architectures can be tuned across the C band (5 THz). An optical chip typically consists of dozens of optical elements. Each element is placed in its own micro-control loop that consists of a thin film heater for thermo-optic control and a thermistor for electronic feedback. The micro-control loops impart intelligence to the optical chip.

  14. Precision Luminosity for $Z^{0}$ Lineshape Measurements with a Silicon-Tungsten Calorimeter

    CERN Document Server

    Abbiendi, G; Alexander, Gideon; Allison, J; Anderson, K J; Anderson, S; Arcelli, S; Asai, S; Ashby, S F; Axen, D A; Azuelos, Georges; Ball, A H; Barberio, E; Barlow, R J; Batley, J Richard; Baumann, S; Bechtluft, J; Behnke, T; Bell, K W; Bella, G; Bellerive, A; Bentvelsen, Stanislaus Cornelius Maria; Bethke, Siegfried; Betts, S; Biebel, O; Biguzzi, A; Bloodworth, Ian J; Bock, P; Böhme, J; Boeriu, O; Bonacorsi, D; Boutemeur, M; Braibant, S; Bright-Thomas, P G; Brigliadori, L; Brown, R M; Burckhart, Helfried J; Capiluppi, P; Carnegie, R K; Carter, A A; Carter, J R; Chang, C Y; Charlton, D G; Chrisman, D; Ciocca, C; Clarke, P E L; Clay, E; Cohen, I; Conboy, J E; Cooke, O C; Couchman, J; Couyoumtzelis, C; Coxe, R L; Cuffiani, M; Dado, S; Dallavalle, G M; Dallison, S; Darling, C L; Davis, R; De Jong, S; de Roeck, A; Dervan, P J; Desch, Klaus; Dienes, B; Dixit, M S; Donkers, M; Dubbert, J; Duchovni, E; Duckeck, G; Duerdoth, I P; Estabrooks, P G; Etzion, E; Evans, H; Fabbri, Franco Luigi; Fanfani, A; Fanti, M; Faust, A A; Feld, L; Ferrari, P; Fiedler, F; Fierro, M; Fleck, I; Foucher, M; Frey, A; Fürtjes, A; Futyan, D I; Gagnon, P; Gary, J W; Gascon-Shotkin, S M; Gaycken, G; Geich-Gimbel, C; Giacomelli, G; Giacomelli, P; Giacomelli, R; Gibson, W R; Gingrich, D M; Glenzinski, D A; Goldberg, J; Gorn, W; Grandi, C; Graham, K; Gross, E; Grunhaus, Jacob; Gruwé, M; Hajdu, C; Hanson, G G; Hansroul, M; Hapke, M; Harder, K; Harel, A; Hargrove, C K; Harin-Dirac, M; Hart, P; Hauschild, M; Hawkes, C M; Hawkings, R; Hemingway, Richard J; Herten, G; Heuer, R D; Hildreth, M D; Hill, J C; Hillier, S J; Hobson, P R; Höcker, Andreas; Hoffman, K; Homer, R James; Honma, A K; Horváth, D; Hossain, K R; Howard, R; Hüntemeyer, P; Igo-Kemenes, P; Imrie, D C; Ishii, K; Jacob, F R; Jawahery, A; Jeremie, H; Jimack, Martin Paul; Jones, C R; Jovanovic, P; Junk, T R; Kanaya, N; Kanzaki, J I; Karlen, D A; Kartvelishvili, V G; Kawagoe, K; Kawamoto, T; Kayal, P I; Keeler, Richard K; Kellogg, R G; Kennedy, B W; Kim, D H; Kirk, J; Klier, A; Kobayashi, T; Kobel, M; Kokott, T P; Kolrep, M; Komamiya, S; Kowalewski, R V; Kress, T; Krieger, P; Von Krogh, J; Kühl, T; Kyberd, P; Lai, W P; Lafferty, G D; Lahmann, R; Landsman, Hagar Yaël; Lanske, D; Lauber, J; Lawson, I; Layter, J G; Lee, A M; Lellouch, Daniel; Letts, J; Levinson, L; Liebisch, R; Lillich, J; List, B; Littlewood, C; Lloyd, A W; Lloyd, S L; Loebinger, F K; Long, G D; Losty, Michael J; Lü, J; Ludwig, J; Liu, D; Macchiolo, A; MacPherson, A L; Mader, W F; Mannelli, M; Marcellini, S; Marchant, T E; Martin, A J; Martin, J P; Martínez, G; Mashimo, T; Mättig, P; McDonald, W J; McKenna, J A; McKigney, E A; McMahon, T J; McPherson, R A; Meijers, F; Méndez-Lorenzo, P; Menke, S; Merritt, F S; Mes, H; Meyer, I; Michelini, Aldo; Mihara, S; Mikenberg, G; Miller, D J; Mohr, W; Montanari, A; Mori, T; Müller, U; Nagai, K; Nakamura, I; Neal, H A; Nisius, R; O'Neale, S W; Oakham, F G; Odorici, F; Ögren, H O; Okpara, A N; Oreglia, M J; Orito, S; Palmonari, F; Pásztor, G; Pater, J R; Patrick, G N; Patt, J; Pérez-Ochoa, R; Petzold, S; Pfeifenschneider, P; Pilcher, J E; Pinfold, James L; Plane, D E; Poffenberger, P R; Poli, B; Polok, J; Przybycien, M B; Quadt, A; Raith, B A; Rembser, C; Rick, Hartmut; Robertson, S; Robins, S A; Rodning, N L; Roney, J M; Rosati, S; Roscoe, K; Rossi, A M; Rozen, Y; Runge, K; Runólfsson, O; Rust, D R; Sachs, K; Saeki, T; Sahr, O; Sang, W M; Sarkisyan-Grinbaum, E; Sbarra, C; Schaile, A D; Schaile, O; Scharff-Hansen, P; Schieck, J; Schmitt, B; Schmitt, S; Schöning, A; Schröder, M; Schumacher, M; Schwick, C; Scott, W G; Seuster, R; Shears, T G; Shen, B C; Shepherd-Themistocleous, C H; Sherwood, P; Siroli, G P; Skuja, A; Smith, A M; Snow, G A; Sobie, Randall J; Söldner-Rembold, S; Spagnolo, S; Springer, W; Sproston, M; Stahl, A; Stephens, K; Stoll, K; Strom, D; Ströhmer, R; Surrow, B; Talbot, S D; Taras, P; Tarem, S; Tecchio, M; Teuscher, R; Thiergen, M; Thomas, J; Thomson, M A; Torrence, E; Towers, S; Trefzger, T M; Trigger, I; Trócsányi, Z L; Tsur, E; Turner-Watson, M F; Ueda, I; Van Kooten, R; Vannerem, P; Verzocchi, M; Voss, H; Wäckerle, F; Wagner, A; Wagner, D; Waller, D; Ward, C P; Ward, D R; Watkins, P M; Watson, A T; Watson, N K; Wells, P S; Wermes, N; Wetterling, D; White, J S; Wilson, G W; Wilson, J A; Wyatt, T R; Yamashita, S; Zacek, V; Zer-Zion, D

    2000-01-01

    The measurement of small-angle Bhabha scattering is used to determine the luminosity at the OPAL interaction point for the LEP I data recorded between 1993 and 1995. The measurement is based on the OPAL Silicon-Tungsten Luminometer which is composed of two calorimeters encircling the LEP beam pipe, on opposite sides of the interaction point. The luminometer detects electrons from small-angle Bhabha scattering at angles between 25 and 58mrad. At LEP center-of-mass energies around the Z0, about half of all Bhabha electrons entering the detector fall within a 79nb fiducial acceptance region. The electromagnetic showers generated in the stack of 1 radiation length tungsten absorber plates are sampled by 608 silicon detectors with 38,912 radial pads of 2.5mm width.The fine segmentation of the detector, combined with the precise knowledge of its physical dimensions, allows the trajectories of incoming 45GeV electrons or photons to be determined with a total systematic error of less than 7microns. We have quantified...

  15. Testbeam evaluation of silicon strip modules for ATLAS Phase - II Strip Tracker Upgrade

    CERN Document Server

    Blue, Andrew; The ATLAS collaboration; Ai, Xiaocong; Allport, Phillip; Arling, Jan-Hendrik; Atkin, Ryan Justin; Bruni, Lucrezia Stella; Carli, Ina; Casse, Gianluigi; Chen, Liejian; Chisholm, Andrew; Cormier, Kyle James Read; Cunningham, William Reilly; Dervan, Paul; Diez Cornell, Sergio; Dolezal, Zdenek; Dopke, Jens; Dreyer, Etienne; Dreyling-Eschweiler, Jan Linus Roderik; Escobar, Carlos; Fabiani, Veronica; Fadeyev, Vitaliy; Fernandez Tejero, Javier; Fleta Corral, Maria Celeste; Gallop, Bruce; Garcia-Argos, Carlos; Greenall, Ashley; Gregor, Ingrid-Maria; Greig, Graham George; Guescini, Francesco; Hara, Kazuhiko; Hauser, Marc Manuel; Huang, Yanping; Hunter, Robert Francis Holub; Keller, John; Klein, Christoph; Kodys, Peter; Koffas, Thomas; Kotek, Zdenek; Kroll, Jiri; Kuehn, Susanne; Lee, Steven Juhyung; Liu, Yi; Lohwasser, Kristin; Meszarosova, Lucia; Mikestikova, Marcela; Mi\\~nano Moya, Mercedes; Mori, Riccardo; Moser, Brian; Nikolopoulos, Konstantinos; Peschke, Richard; Pezzullo, Giuseppe; Phillips, Peter William; Poley, Anne-luise; Queitsch-Maitland, Michaela; Ravotti, Federico; Rodriguez Rodriguez, Daniel

    2018-01-01

    The planned HL-LHC (High Luminosity LHC) is being designed to maximise the physics potential of the LHC with 10 years of operation at instantaneous luminosities of \\mbox{$7.5\\times10^{34}\\;\\mathrm{cm}^{-2}\\mathrm{s}^{-1}$}. A consequence of this increased luminosity is the expected radiation damage requiring the tracking detectors to withstand hadron equivalences to over $1x10^{15}$ 1 MeV neutron equivalent per $cm^{2}$ in the ATLAS Strips system. The silicon strip tracker exploits the concept of modularity. Fast readout electronics, deploying 130nm CMOS front-end electronics are glued on top of a silicon sensor to make a module. The radiation hard n-in-p micro-strip sensors used have been developed by the ATLAS ITk Strip Sensor collaboration and produced by Hamamatsu Photonics. A series of tests were performed at the DESY-II test beam facility to investigate the detailed performance of a strip module with both 2.5cm and 5cm length strips before irradiation. The DURANTA telescope was used to obtain a pointing...

  16. Telomere length analysis.

    Science.gov (United States)

    Canela, Andrés; Klatt, Peter; Blasco, María A

    2007-01-01

    Most somatic cells of long-lived species undergo telomere shortening throughout life. Critically short telomeres trigger loss of cell viability in tissues, which has been related to alteration of tissue function and loss of regenerative capabilities in aging and aging-related diseases. Hence, telomere length is an important biomarker for aging and can be used in the prognosis of aging diseases. These facts highlight the importance of developing methods for telomere length determination that can be employed to evaluate telomere length during the human aging process. Telomere length quantification methods have improved greatly in accuracy and sensitivity since the development of the conventional telomeric Southern blot. Here, we describe the different methodologies recently developed for telomere length quantification, as well as their potential applications for human aging studies.

  17. Effects of absorption on coherence domain path length resolved dynamic light scattering in the diffuse regime

    NARCIS (Netherlands)

    Petoukhova, A. L.; Steenbergen, W.; van Leeuwen, T. G.; de Mul, F. F. M.

    2002-01-01

    A low coherence Mach-Zehnder interferometer is developed for path length resolved dynamic light scattering in highly turbid media. The path length distribution of multiply scattered photons in Intralipid is changed by the addition of absorbing dyes. Path length distributions obtained for various

  18. Flexible manufacturing for photonics device assembly

    Science.gov (United States)

    Lu, Shin-Yee; Pocha, Michael D.; Strand, Oliver T.; Young, K. David

    1994-01-01

    The assembly of photonics devices such as laser diodes, optical modulators, and opto-electronics multi-chip modules (OEMCM), usually requires the placement of micron size devices such as laser diodes, and sub-micron precision attachment between optical fibers and diodes or waveguide modulators (usually referred to as pigtailing). This is a very labor intensive process. Studies done by the opto-electronics (OE) industry have shown that 95 percent of the cost of a pigtailed photonic device is due to the use of manual alignment and bonding techniques, which is the current practice in industry. At Lawrence Livermore National Laboratory, we are working to reduce the cost of packaging OE devices through the use of automation. Our efforts are concentrated on several areas that are directly related to an automated process. This paper will focus on our progress in two of those areas, in particular, an automated fiber pigtailing machine and silicon micro-technology compatible with an automated process.

  19. Si micro photonics for optical interconnection

    International Nuclear Information System (INIS)

    Wada, K.; Ahn, D.H.; Lim, D.R.; Michel, J.; Kimerling, L.C.

    2006-01-01

    This paper reviews current status of silicon microphotonics and the recent prototype of on-chip optical interconnection. Si microphotonics pursues complementary metal oxide semiconductor (CMOS)-compatibility of photonic devices to reduce the materials diversity eventually to integrate on Si chips. Fractal optical H-trees have been implemented on a chip and found to be a technology breakthrough beyond metal interconnection. It has shown that large RC time constants associated with metal can be eliminated at least long distant data communication on a chip, and eventually improve yield and power issues. This has become the world's first electronic and photonic integrated circuits (EPICs) and the possibility of at least 10 GHz clocking for personal computers has been demonstrated

  20. VSiPMT a new photon detector

    Directory of Open Access Journals (Sweden)

    Di Capua F.

    2016-01-01

    Full Text Available Photon detection is a key factor to study many physical processes in several areas of fundamental physics research. Focusing the attention on photodetectors for particle astrophysics, the future experiments aimed at the study of very high-energy or extremely rare phenomena (e.g. dark matter, proton decay, neutrinos from astrophysical sources will require additional improvements in linearity, gain, quantum efficiency and single photon counting capability. To meet the requirements of these class of experiments, we propose a new design for a modern hybrid photodetector: the VSiPMT (Vacuum Silicon PhotoMultiplier Tube. The idea is to replace the classical dynode chain of a PMT with a SiPM, which therefore acts as an electron detector and amplifier. The aim is to match the large sensitive area of a photocathode with the performances of the SiPM technology.

  1. Efficient Generation of an Array of Single Silicon-Vacancy Defects in Silicon Carbide

    Science.gov (United States)

    Wang, Junfeng; Zhou, Yu; Zhang, Xiaoming; Liu, Fucai; Li, Yan; Li, Ke; Liu, Zheng; Wang, Guanzhong; Gao, Weibo

    2017-06-01

    Color centers in silicon carbide have increasingly attracted attention in recent years owing to their excellent properties such as single-photon emission, good photostability, and long spin-coherence time even at room temperature. As compared to diamond, which is widely used for hosting nitrogen-vacancy centers, silicon carbide has an advantage in terms of large-scale, high-quality, and low-cost growth, as well as an advanced fabrication technique in optoelectronics, leading to prospects for large-scale quantum engineering. In this paper, we report an experimental demonstration of the generation of a single-photon-emitter array through ion implantation. VSi defects are generated in predetermined locations with high generation efficiency (approximately 19 % ±4 % ). The single emitter probability reaches approximately 34 % ±4 % when the ion-implantation dose is properly set. This method serves as a critical step in integrating single VSi defect emitters with photonic structures, which, in turn, can improve the emission and collection efficiency of VSi defects when they are used in a spin photonic quantum network. On the other hand, the defects are shallow, and they are generated about 40 nm below the surface which can serve as a critical resource in quantum-sensing applications.

  2. Fabrication and Characterisation of Silicon Waveguides for High-Speed Optical Signal Processing

    DEFF Research Database (Denmark)

    Jensen, Asger Sellerup

    This Ph.D. thesis treats various aspects of silicon photonics. From the limitations of silicon as a linear and nonlinear waveguide medium to its synergy with other waveguide materials. Various methods for reducing sidewall roughness and line edge roughness of silicon waveguides are attempted...... was too high for any practical applications. It is speculated that the attempt at creating a material with low density of dangling bonds was unsuccessful. Nevertheless, linear losses of 2.4dB/cm at 1550nm wavelength in the silicon waveguides remained sufficiently low that high speed nonlinear optical...

  3. Band gaps and cavity modes in dual phononic and photonic strip waveguides

    Directory of Open Access Journals (Sweden)

    Y. Pennec

    2011-12-01

    Full Text Available We discuss theoretically the simultaneous existence of phoxonic, i.e., dual phononic and photonic, band gaps in a periodic silicon strip waveguide. The unit-cell of this one-dimensional waveguide contains a hole in the middle and two symmetric stubs on the sides. Indeed, stubs and holes are respectively favorable for creating a phononic and a photonic band gap. Appropriate geometrical parameters allow us to obtain a complete phononic gap together with a photonic gap of a given polarization and symmetry. The insertion of a cavity inside the perfect structure provides simultaneous confinement of acoustic and optical waves suitable to enhance the phonon-photon interaction.

  4. The chemistry of silicon

    CERN Document Server

    Rochow, E G; Emeléus, H J; Nyholm, Ronald

    1975-01-01

    Pergamon Texts in Organic Chemistry, Volume 9: The Chemistry of Silicon presents information essential in understanding the chemical properties of silicon. The book first covers the fundamental aspects of silicon, such as its nuclear, physical, and chemical properties. The text also details the history of silicon, its occurrence and distribution, and applications. Next, the selection enumerates the compounds and complexes of silicon, along with organosilicon compounds. The text will be of great interest to chemists and chemical engineers. Other researchers working on research study involving s

  5. The Heavy Photon Search experiment at Jefferson Laboratory

    Energy Technology Data Exchange (ETDEWEB)

    Celentano, Andrea [INFN-GENOVA

    2014-11-01

    The Heavy Photon Search experiment (HPS) at Jefferson Laboratory will search for a new U(1) massive gauge boson, or "heavy-photon", mediator of a new fundamental interaction, called "dark-force", that couples to ordinary photons through kinetic mixing. HPS has sensitivity in the mass range 20 MeV – 1 GeV and coupling epsilon2 between 10-5 and 10-10. The HPS experiment will look for the e+e- decay of the heavy photon, by resonance search and detached vertexing, in an electron beam fixed target experiment. HPS will use a compact forward spectrometer, which employs silicon microstrip detectors for vertexing and tracking, and a PbWO4 electromagnetic calorimeter for energy measurement and fast triggering.

  6. Progress in the research and development of photonic structure devices

    Science.gov (United States)

    Pham, Van Hoi; Bui, Huy; Van Nguyen, Thuy; Nguyen, The Anh; Son Pham, Thanh; Pham, Van Dai; Cham Tran, Thi; Trang Hoang, Thu; Ngo, Quang Minh

    2016-03-01

    In this paper we review the results of the research and development of photonic structure devices performed in the Institute of Materials Science in the period from 2010-2015. We have developed a configuration of 1D photonic crystal (PC) microcavities based on porous silicon (PS) layers and applied them to optical sensing devices that can be used for the determination of organic content with a very low concentration in different liquid environments. Various important scientific and technological applications of photonic devices such as the ultralow power operation of microcavity lasers, the inhibition of spontaneous emissions and the manipulation of light amplification by combining the surface plasmonic effect and the microcavity are expected. We developed new kinds of photonic structures for optical filters based on guided-mode resonances in coupled slab waveguide gratings, which have great potential for application in fiber-optic communication and optical sensors.

  7. Concept of formation length in radiation theory

    International Nuclear Information System (INIS)

    Baier, V.N.; Katkov, V.M.

    2005-01-01

    The features of electromagnetic processes are considered which connected with finite size of space region in which final particles (photon, electron-positron pair) are formed. The longitudinal dimension of the region is known as the formation length. If some external agent is acting on an electron while traveling this distance the emission process can be disrupted. There are different agents: multiple scattering of projectile, polarization of a medium, action of external fields, etc. The theory of radiation under influence of the multiple scattering, the Landau-Pomeranchuk-Migdal (LPM) effect, is presented. The probability of radiation is calculated with an accuracy up to 'next to leading logarithm' and with the Coulomb corrections taken into account. The integral characteristics of bremsstrahlung are given, it is shown that the effective radiation length increases due to the LPM effect at high energy. The LPM effect for pair creation is also presented. The multiple scattering influences also on radiative corrections in a medium (and an external field too) including the anomalous magnetic moment of an electron and the polarization tensor as well as coherent scattering of a photon in a Coulomb field. The polarization of a medium alters the radiation probability in soft part of spectrum. Specific features of radiation from a target of finite thickness include: the boundary photon emission, interference effects for thin target, multi-photon radiation. The theory predictions are compared with experimental data obtained at SLAC and CERN SPS. For electron-positron colliding beams following items are discussed: the separation of coherent and incoherent mechanisms of radiation, the beam-size effect in bremsstrahlung, coherent radiation and mechanisms of electron-positron creation

  8. Silicon spintronics: Progress and challenges

    International Nuclear Information System (INIS)

    Sverdlov, Viktor; Selberherr, Siegfried

    2015-01-01

    Electron spin attracts much attention as an alternative to the electron charge degree of freedom for low-power reprogrammable logic and non-volatile memory applications. Silicon appears to be the perfect material for spin-driven applications. Recent progress and challenges regarding spin-based devices are reviewed. An order of magnitude enhancement of the electron spin lifetime in silicon thin films by shear strain is predicted and its impact on spin transport in SpinFETs is discussed. A relatively weak coupling between spin and effective electric field in silicon allows magnetoresistance modulation at room temperature, however, for long channel lengths. Due to tunneling magnetoresistance and spin transfer torque effects, a much stronger coupling between the spin (magnetization) orientation and charge current is achieved in magnetic tunnel junctions. Magnetic random access memory (MRAM) built on magnetic tunnel junctions is CMOS compatible and possesses all properties needed for future universal memory. Designs of spin-based non-volatile MRAM cells are presented. By means of micromagnetic simulations it is demonstrated that a substantial reduction of the switching time can be achieved. Finally, it is shown that any two arbitrary memory cells from an MRAM array can be used to perform a logic operation. Thus, an intrinsic non-volatile logic-in-memory architecture can be realized

  9. Silicon spintronics: Progress and challenges

    Energy Technology Data Exchange (ETDEWEB)

    Sverdlov, Viktor; Selberherr, Siegfried, E-mail: Selberherr@TUWien.ac.at

    2015-07-14

    Electron spin attracts much attention as an alternative to the electron charge degree of freedom for low-power reprogrammable logic and non-volatile memory applications. Silicon appears to be the perfect material for spin-driven applications. Recent progress and challenges regarding spin-based devices are reviewed. An order of magnitude enhancement of the electron spin lifetime in silicon thin films by shear strain is predicted and its impact on spin transport in SpinFETs is discussed. A relatively weak coupling between spin and effective electric field in silicon allows magnetoresistance modulation at room temperature, however, for long channel lengths. Due to tunneling magnetoresistance and spin transfer torque effects, a much stronger coupling between the spin (magnetization) orientation and charge current is achieved in magnetic tunnel junctions. Magnetic random access memory (MRAM) built on magnetic tunnel junctions is CMOS compatible and possesses all properties needed for future universal memory. Designs of spin-based non-volatile MRAM cells are presented. By means of micromagnetic simulations it is demonstrated that a substantial reduction of the switching time can be achieved. Finally, it is shown that any two arbitrary memory cells from an MRAM array can be used to perform a logic operation. Thus, an intrinsic non-volatile logic-in-memory architecture can be realized.

  10. Silicon spintronics: Progress and challenges

    Science.gov (United States)

    Sverdlov, Viktor; Selberherr, Siegfried

    2015-07-01

    Electron spin attracts much attention as an alternative to the electron charge degree of freedom for low-power reprogrammable logic and non-volatile memory applications. Silicon appears to be the perfect material for spin-driven applications. Recent progress and challenges regarding spin-based devices are reviewed. An order of magnitude enhancement of the electron spin lifetime in silicon thin films by shear strain is predicted and its impact on spin transport in SpinFETs is discussed. A relatively weak coupling between spin and effective electric field in silicon allows magnetoresistance modulation at room temperature, however, for long channel lengths. Due to tunneling magnetoresistance and spin transfer torque effects, a much stronger coupling between the spin (magnetization) orientation and charge current is achieved in magnetic tunnel junctions. Magnetic random access memory (MRAM) built on magnetic tunnel junctions is CMOS compatible and possesses all properties needed for future universal memory. Designs of spin-based non-volatile MRAM cells are presented. By means of micromagnetic simulations it is demonstrated that a substantial reduction of the switching time can be achieved. Finally, it is shown that any two arbitrary memory cells from an MRAM array can be used to perform a logic operation. Thus, an intrinsic non-volatile logic-in-memory architecture can be realized.

  11. Stable configurations of graphene on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Javvaji, Brahmanandam; Shenoy, Bhamy Maithry [Department of Aerospace Engineering, Indian Institute of Science, Bangalore 560012 (India); Mahapatra, D. Roy, E-mail: droymahapatra@aero.iisc.ernet.in [Department of Aerospace Engineering, Indian Institute of Science, Bangalore 560012 (India); Ravikumar, Abhilash [Department of Metallurgical and Materials Engineering, National Institute of Technology Karnataka, Surathkal 575025 (India); Hegde, G.M. [Center for Nano Science and Engineering, Indian Institute of Science, Bangalore 560012 (India); Rizwan, M.R. [Department of Metallurgical and Materials Engineering, National Institute of Technology Karnataka, Surathkal 575025 (India)

    2017-08-31

    Highlights: • Simulations of epitaxial growth process for silicon–graphene system is performed. • Identified the most favourable orientation of graphene sheet on silicon substrate. • Atomic local strain due to the silicon–carbon bond formation is analyzed. - Abstract: Integration of graphene on silicon-based nanostructures is crucial in advancing graphene based nanoelectronic device technologies. The present paper provides a new insight on the combined effect of graphene structure and silicon (001) substrate on their two-dimensional anisotropic interface. Molecular dynamics simulations involving the sub-nanoscale interface reveal a most favourable set of temperature independent orientations of the monolayer graphene sheet with an angle of ∽15° between its armchair direction and [010] axis of the silicon substrate. While computing the favorable stable orientations, both the translation and the rotational vibrations of graphene are included. The possible interactions between the graphene atoms and the silicon atoms are identified from their coordination. Graphene sheet shows maximum bonding density with bond length 0.195 nm and minimum bond energy when interfaced with silicon substrate at 15° orientation. Local deformation analysis reveals probability distribution with maximum strain levels of 0.134, 0.047 and 0.029 for 900 K, 300 K and 100 K, respectively in silicon surface for 15° oriented graphene whereas the maximum probable strain in graphene is about 0.041 irrespective of temperature. Silicon–silicon dimer formation is changed due to silicon–carbon bonding. These results may help further in band structure engineering of silicon–graphene lattice.

  12. Review of Microwave Photonics Technique to Generate the Microwave Signal by Using Photonics Technology

    Science.gov (United States)

    Raghuwanshi, Sanjeev Kumar; Srivastav, Akash

    2017-12-01

    Microwave photonics system provides high bandwidth capabilities of fiber optic systems and also contains the ability to provide interconnect transmission properties, which are virtually independent of length. The low-loss wide bandwidth capability of optoelectronic systems makes them attractive for the transmission and processing of microwave signals, while the development of high-capacity optical communication systems has required the use of microwave techniques in optical transmitters and receivers. These two strands have led to the development of the research area of microwave photonics. So, we can considered microwave photonics as the field that studies the interaction between microwave and optical waves for applications such as communications, radars, sensors and instrumentations. In this paper we have thoroughly reviewed the microwave generation techniques by using photonics technology.

  13. Brachytherapy dosimeter with silicon photomultipliers

    Energy Technology Data Exchange (ETDEWEB)

    Moutinho, L.M., E-mail: moutinho@ua.pt [i3N, Physics Department, University of Aveiro (Portugal); Castro, I.F.C. [i3N, Physics Department, University of Aveiro (Portugal); Peralta, L. [Faculdade de Ciências da Universidade de Lisboa (Portugal); Laboratório de Instrumentação e Física Experimental de Partículas (LIP), Lisboa (Portugal); Abreu, M.C. [Laboratório de Instrumentação e Física Experimental de Partículas (LIP), Lisboa (Portugal); Veloso, J.F.C.A. [i3N, Physics Department, University of Aveiro (Portugal)

    2015-07-01

    In-vivo and in-situ measurement of the radiation dose administered during brachytherapy faces several technical challenges, requiring a very compact, tissue-equivalent, linear and highly sensitive dosimeter, particularly in low-dose rate brachytherapy procedures, which use radioactive seeds with low energy and low dose deposition rate. In this work we present a scintillating optical fiber dosimeter composed of a flexible sensitive probe and a dedicated electronic readout system based on silicon photomultiplier photodetection, capable of operating both in pulse and current modes. The performance of the scintillating fiber optic dosimeter was evaluated in low energy regimes, using an X-ray tube operating at voltages of 40–50 kV and currents below 1 mA, to assess minimum dose response of the scintillating fiber. The dosimeter shows a linear response with dose and is capable of detecting mGy dose variations like an ionization chamber. Besides fulfilling all the requirements for a dosimeter in brachytherapy, the high sensitivity of this device makes it a suitable candidate for application in low-dose rate brachytherapy. According to Peralta and Rego [1], the BCF-10 and BCF-60 scintillating optical fibers used in dosimetry exhibit high variations in their sensitivity for photon beams in the 25–100 kVp energy range. Energy linearity for energies below 50 keV needs to be further investigated, using monochromatic X-ray photons.

  14. Simulation of Silicon Photomultiplier Signals

    Science.gov (United States)

    Seifert, Stefan; van Dam, Herman T.; Huizenga, Jan; Vinke, Ruud; Dendooven, Peter; Lohner, Herbert; Schaart, Dennis R.

    2009-12-01

    In a silicon photomultiplier (SiPM), also referred to as multi-pixel photon counter (MPPC), many Geiger-mode avalanche photodiodes (GM-APDs) are connected in parallel so as to combine the photon counting capabilities of each of these so-called microcells into a proportional light sensor. The discharge of a single microcell is relatively well understood and electronic models exist to simulate this process. In this paper we introduce an extended model that is able to simulate the simultaneous discharge of multiple cells. This model is used to predict the SiPM signal in response to fast light pulses as a function of the number of fired cells, taking into account the influence of the input impedance of the SiPM preamplifier. The model predicts that the electronic signal is not proportional to the number of fired cells if the preamplifier input impedance is not zero. This effect becomes more important for SiPMs with lower parasitic capacitance (which otherwise is a favorable property). The model is validated by comparing its predictions to experimental data obtained with two different SiPMs (Hamamatsu S10362-11-25u and Hamamatsu S10362-33-25c) illuminated with ps laser pulses. The experimental results are in good agreement with the model predictions.

  15. Silicon photomultiplier timing performance study

    Energy Technology Data Exchange (ETDEWEB)

    Gamal, Ahmed, E-mail: gamal.ahmed@assoc.oeaw.ac.at [Stefan Meyer Institute for Subatomic Physics of the Austrian Academy of Sciences, Vienna (Austria); Al-Azhar University, Faculty of Science, Physics Department, Cairo (Egypt); Paul, Buehler; Johann, Marton; Ken, Suzuki [Stefan Meyer Institute for Subatomic Physics of the Austrian Academy of Sciences, Vienna (Austria)

    2011-10-01

    Many characteristics of Silicon Photomultipliers can be tuned with temperature and operation voltage. We present preliminary results of a study of the effect of these two operation parameters on the time resolution of large active area Multi-Pixel Photon Counters (MPPCs) manufactured by Hamamatsu. Measurements at -10, 0, and 10 deg. C at different bias voltages were performed. The time resolution is best at low temperature and high over-voltage. Most significant improvements can be achieved in cases with low number of fired pixels (<10pixels). Between the worst and best case among the considered conditions a factor of five improvement was observed. In cases with large number of fired pixels (>40pixels) the effect of temperature and operation voltage becomes smaller. The timing performance still improves with decreasing temperature ({approx}factor of 2) but it hardly depends on the operation voltage. The study shows that especially in applications where only few photons are available for detection a careful optimization of temperature and operation voltage are advisable to obtain optimum timing results with the MPPC.

  16. Single-photon imaging

    CERN Document Server

    Seitz, Peter

    2011-01-01

    The acquisition and interpretation of images is a central capability in almost all scientific and technological domains. In particular, the acquisition of electromagnetic radiation, in the form of visible light, UV, infrared, X-ray, etc. is of enormous practical importance. The ultimate sensitivity in electronic imaging is the detection of individual photons. With this book, the first comprehensive review of all aspects of single-photon electronic imaging has been created. Topics include theoretical basics, semiconductor fabrication, single-photon detection principles, imager design and applications of different spectral domains. Today, the solid-state fabrication capabilities for several types of image sensors has advanced to a point, where uncoooled single-photon electronic imaging will soon become a consumer product. This book is giving a specialist´s view from different domains to the forthcoming “single-photon imaging” revolution. The various aspects of single-photon imaging are treated by internati...

  17. Ionization-induced rearrangement of defects in silicon

    International Nuclear Information System (INIS)

    Vinetskij, V.L.; Manojlo, M.A.; Matvijchuk, A.S.; Strikha, V.I.; Kholodar', G.A.

    1988-01-01

    Ionizing factor effect on defect rearrangement in silicon including centers with deep local electron levels in the p-n-transition region is considered. Deep center parameters were determined using non-steady-state capacity spectroscopy of deep levels (NCDLS) method. NCDLS spectrum measurement was performed using source p + -n - diodes and after their irradiation with 15 keV energy electrons or laser pulses. It is ascertained that in silicon samples containing point defect clusters defect rearrangement under ionizing factor effect takes place, i.e. deep level spectra are changed. This mechanism is efficient in case of silicon irradiation with subthreshold energy photons and electrons and can cause degradation of silicon semiconducting structures

  18. Telomere length and depression

    DEFF Research Database (Denmark)

    Wium-Andersen, Marie Kim; Ørsted, David Dynnes; Rode, Line

    2017-01-01

    BACKGROUND: Depression has been cross-sectionally associated with short telomeres as a measure of biological age. However, the direction and nature of the association is currently unclear. AIMS: We examined whether short telomere length is associated with depression cross-sectionally as well...... as prospectively and genetically. METHOD: Telomere length and three polymorphisms, TERT, TERC and OBFC1, were measured in 67 306 individuals aged 20-100 years from the Danish general population and associated with register-based attendance at hospital for depression and purchase of antidepressant medication....... RESULTS: Attendance at hospital for depression was associated with short telomere length cross-sectionally, but not prospectively. Further, purchase of antidepressant medication was not associated with short telomere length cross-sectionally or prospectively. Mean follow-up was 7.6 years (range 0...

  19. Myofilament length dependent activation

    Energy Technology Data Exchange (ETDEWEB)

    de Tombe, Pieter P.; Mateja, Ryan D.; Tachampa, Kittipong; Mou, Younss Ait; Farman, Gerrie P.; Irving, Thomas C. (IIT); (Loyola)

    2010-05-25

    The Frank-Starling law of the heart describes the interrelationship between end-diastolic volume and cardiac ejection volume, a regulatory system that operates on a beat-to-beat basis. The main cellular mechanism that underlies this phenomenon is an increase in the responsiveness of cardiac myofilaments to activating Ca{sup 2+} ions at a longer sarcomere length, commonly referred to as myofilament length-dependent activation. This review focuses on what molecular mechanisms may underlie myofilament length dependency. Specifically, the roles of inter-filament spacing, thick and thin filament based regulation, as well as sarcomeric regulatory proteins are discussed. Although the 'Frank-Starling law of the heart' constitutes a fundamental cardiac property that has been appreciated for well over a century, it is still not known in muscle how the contractile apparatus transduces the information concerning sarcomere length to modulate ventricular pressure development.

  20. Upper Extremity Length Equalization

    OpenAIRE

    DeCoster, Thomas A.; Ritterbusch, John; Crawford, Mark

    1992-01-01

    Significant upper extremity length inequality is uncommon but can cause major functional problems. The ability to position and use the hand may be impaired by shortness of any of the long bones of the upper extremity. In many respects upper and lower extremity length problems are similar. They most commonly occur after injury to a growing bone and the treatment modalities utilized in the lower extremity may be applied to the upper extremity. These treatment options include epiphysiodesis, sho...