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Sample records for led structures grown

  1. GaN and LED structures grown on pre-patterned silicon pillar arrays

    Energy Technology Data Exchange (ETDEWEB)

    Li, Shunfeng; Fuendling, Soenke; Soekmen, Uensal; Merzsch, Stephan; Neumann, Richard; Peiner, Erwin; Wehmann, Hergo-Heinrich; Waag, Andreas [Institut fuer Halbleitertechnik, TU Braunschweig, Hans-Sommer-Strasse 66, 38106 Braunschweig (Germany); Hinze, Peter; Weimann, Thomas [Physikalisch-Technische Bundesanstalt (PTB), Bundesallee 100, 38116 Braunschweig (Germany); Jahn, Uwe; Trampert, Achim; Riechert, Henning [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvoigteiplatz 5-7, 10117 Berlin (Germany)

    2010-01-15

    GaN nanorods (or nanowires) have attracted great interest in a variety of applications, e.g. high-efficiency light emitting diodes, monolithic white light emission and optical interconnection due to their superior properties. In contrast to the mostly investigated self-assembled growth of GaN nanorods, we performed GaN nanorod growth by pre-patterning of the Si substrates. The pattern was transferred to Si substrates by photolithography and cryo-temperature inductively-coupled plasma etching. These Si templates then were used for further GaN nanorod growth by metal-organic vapour phase epitaxy (MOVPE). The low temperature AlN nucleation layer had to be optimized since it differs from its 2D layer counterpart on the surface area and orientations. We found a strong influence of diffusion processes, i.e. the GaN grown on top of the Si nanopillars can deplete the GaN around the Si pillars. Transmission electron microscopy measurements demonstrated clearly that the threading dislocations bend to the side facets of the pyramidal GaN nanostructures and terminate. Cathodoluminescence measurements reveal a difference of In composition and/or thickness of InGaN quantum wells on the different facets of the pyramidal GaN nanostructures. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. GaN nanorods and LED structures grown on patterned Si and AlN/Si substrates by selective area growth

    Energy Technology Data Exchange (ETDEWEB)

    Li, Shunfeng; Fuendling, Soenke; Soekmen, Uensal; Neumann, Richard; Merzsch, Stephan; Peiner, Erwin; Wehmann, Hergo-Heinrich; Waag, Andreas [Institut fuer Halbleitertechnik, TU Braunschweig (Germany); Hinze, Peter; Weimann, Thomas [Physikalisch-Technische Bundesanstalt (PTB), Braunschweig (Germany); Jahn, Uwe; Trampert, Achim; Riechert, Henning [Paul-Drude-Institut fuer Festkoerperelektronik, Berlin (Germany)

    2010-07-15

    GaN nanorods (NRs) show promising applications in high-efficiency light emitting diodes, monolithic white light emission and optical interconnection due to their superior properties. In this work, we performed GaN nanostructures growth by pre-patterning the Si and AlN/Si substrates. The pattern was transferred to Si and AlN/Si substrates by photolithography and inductively-coupled plasma etching. GaN NRs were grown on these templates by metal-organic vapour phase epitaxy (MOVPE). GaN grown on Si pillar templates show a truncated pyramidal structure. Transmission electron microscopy measurements demonstrated clearly that the threading dislocations bend to the side facets of the GaN nanostructures and terminate. GaN growth can also be observed on the sidewalls and bottom surface between the Si pillars. A simple phenomenological model is proposed to explain the GaN nanostructure growth on Si pillar templates. Based on this model, we developed another growth method, by which we grow GaN rod structures on pre-patterned AlN/Si templates. By in-situ nitridation and decreasing of the V/III ratio, we found that GaN rods only grew on the patterned AlN/Si dots with an aspect ratio of about 1.5 - 2. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Photoelectrochemical liftoff of LEDs grown on freestanding c-plane GaN substrates

    KAUST Repository

    Hwang, David

    2016-09-23

    We demonstrate a thin-film flip-chip (TFFC) process for LEDs grown on freestanding c-plane GaN substrates. LEDs are transferred from a bulk GaN substrate to a sapphire submount via a photoelectrochemical (PEC) undercut etch. This PEC liftoff method allows for substrate reuse and exposes the N-face of the LEDs for additional roughening. The LEDs emitted at a wavelength of 432 nm with a turn on voltage of ~3 V. Etching the LEDs in heated KOH after transferring them to a sapphire submount increased the peak external quantum efficiency (EQE) by 42.5% from 9.9% (unintentionally roughened) to 14.1% (intentionally roughened).

  4. Comparative Phenotypical and Molecular Analyses of Arabidopsis Grown under Fluorescent and LED Light

    Directory of Open Access Journals (Sweden)

    Franka Seiler

    2017-06-01

    Full Text Available Comparative analyses of phenotypic and molecular traits of Arabidopsis thaliana grown under standardised conditions is still a challenge using climatic devices supplied with common light sources. These are in most cases fluorescent lights, which have several disadvantages such as heat production at higher light intensities, an invariable spectral output, and relatively rapid “ageing”. This results in non-desired variations of growth conditions and lowers the comparability of data acquired over extended time periods. In this study, we investigated the growth behaviour of Arabidopsis Col0 under different light conditions, applying fluorescent compared to LED lamps, and we conducted physiological as well as gene expression analyses. By changing the spectral composition and/or light intensity of LEDs we can clearly influence the growth behaviour of Arabidopsis and thereby study phenotypic attributes under very specific light conditions that are stable and reproducible, which is not necessarily given for fluorescent lamps. By using LED lights, we can also roughly mimic the sun light emission spectrum, enabling us to study plant growth in a more natural-like light set-up. We observed distinct growth behaviour under the different light regimes which was reflected by physiological properties of the plants. In conclusion, LEDs provide variable emission spectra for studying plant growth under defined, stable light conditions.

  5. Comparative Study of Lettuce and Radish Grown Under Red and Blue LEDs and White Fluorescent Lamps

    Science.gov (United States)

    Mickens, Matthew A.; Massa, Gioia; Newsham, Gerard; Wheeler, Raymond; Birmele, Michele

    2016-01-01

    Growing vegetable crops in space will be an essential part of sustaining astronauts during long-range missions. To drive photosynthesis, red and blue light-emitting diodes (LEDs) have attracted attention because of their efficiency, longevity, small size, and safety. In efforts to optimize crop yield, there is also recent interest in analyzing the subtle effects of additional wavelengths on plant growth. For instance, since plants often look purplish gray under red and blue LEDs, the addition of green light allows easy recognition of disease and the assessment of plant health status. However, it is important to know if wavelengths outside the traditional red and blue wavebands have a direct effect on enhancing or hindering the mechanisms involved in plant growth. In this experiment, a comparative study was performed on two short cycle crops of red romaine lettuce (Lactuca sativa cv. "Outredgeous") and radish (Raphanus sativa cv. 'Cherry Bomb'), which were grown under two light treatments. The first treatment being red (630 nm) and blue (450 nm) LEDs alone, while the second treatment consisted of daylight tri-phosphor fluorescent lamps (CCT approximately 5000 K) at equal photosynthetic photon flux (PPF). The treatment effects were evaluated by measuring the fresh biomass produced, plant morphology and leaf dimensions, leaf chlorophyll content, and adenosine triphosphate (ATP) within plant leaf/storage root tissues.

  6. Structural, electrical and luminescent characteristics of ultraviolet light emitting structures grown by hydride vapor phase epitaxy

    Directory of Open Access Journals (Sweden)

    A.Y. Polyakov

    2017-03-01

    Full Text Available Electrical and luminescent properties of near-UV light emitting diode structures (LEDs prepared by hydride vapor phase epitaxy (HVPE were studied. Variations in photoluminescence and electroluminescence efficiency observed for LEDs grown under nominally similar conditions could be attributed to the difference in the structural quality (dislocation density, density of dislocations agglomerates of the GaN active layers, to the difference in strain relaxation achieved by growth of AlGaN/AlGaN superlattice and to the presence of current leakage channels in current confining AlGaN layers of the double heterostructure.

  7. Structural Reliability of the Nigerian Grown Abura Timber Bridge ...

    African Journals Online (AJOL)

    Structural reliability analysis was carried out on the Nigerian grown Abura timber, to ascertain its structural performance as timber bridge beams. Samples of the Nigerian grown Abura timber were bought from timber market, seasoned naturally and their structural/strength properties were determined at a moisture content of ...

  8. Nanomaterial disordering in AlGaN/GaN UV LED structures

    International Nuclear Information System (INIS)

    Shabunina, E I; Levinshtein, M E; Kulagina, M M; Petrov, V N; Ratnikov, V V; Smirnova, I N; Troshkov, S I; Shmidt, N M; Kurin, S Yu; Makarov, Yu N; Chernyakov, A E; Usikov, A S; Helava, H

    2015-01-01

    Multifractal analysis was applied to characterize quantitatively nanostructural disordering in HVPE-grown AlGaN/GaN UV LED structures. A higher level of leakage currents shunting the active region of LEDs by an extended defect system is correlated with higher values of multifractal parameters (MFs). As a result, the concentration of injected carriers participating in radiative recombination in the active region is reduced. MFs and the conductivity of quasi-ohmic shunts localized in an extended defect system are higher in AlGaN/GaN structures than in InGaN/GaN structures. It is one of the reasons behind the low external quantum efficiency of AlGaN/GaN UV LEDs. (paper)

  9. Understanding the defect structure of solution grown zinc oxide

    Energy Technology Data Exchange (ETDEWEB)

    Liew, Laura-Lynn [Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A-STAR), 3 Research Link, Singapore 117602 (Singapore); School of Materials Science and Engineering, Nanyang Technological University, Block N4.1 Nanyang Avenue, Singapore 639798 (Singapore); Sankar, Gopinathan, E-mail: g.sankar@ucl.ac.uk [Department of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ (United Kingdom); Handoko, Albertus D. [Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A-STAR), 3 Research Link, Singapore 117602 (Singapore); Goh, Gregory K.L., E-mail: g-goh@imre.a-star.edu.sg [Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A-STAR), 3 Research Link, Singapore 117602 (Singapore); School of Materials Science and Engineering, Nanyang Technological University, Block N4.1 Nanyang Avenue, Singapore 639798 (Singapore); Kohara, Shinji [Japan Synchrotron Radiation Research Institute (JASRI), Mikazuki, Sayo, Hyogo 679-5198 (Japan)

    2012-05-15

    Zinc oxide (ZnO) is a wide bandgap semiconducting oxide with many potential applications in various optoelectronic devices such as light emitting diodes (LEDs) and field effect transistors (FETs). Much effort has been made to understand the ZnO structure and its defects. However, one major issue in determining whether it is Zn or O deficiency that provides ZnO its unique properties remains. X-ray absorption spectroscopy (XAS) is an ideal, atom specific characterization technique that is able to probe defect structure in many materials, including ZnO. In this paper, comparative studies of bulk and aqueous solution grown ({<=}90 Degree-Sign C) ZnO powders using XAS and x-ray pair distribution function (XPDF) techniques are described. The XAS Zn-Zn correlation and XPDF results undoubtedly point out that the solution grown ZnO contains Zn deficiency, rather than the O deficiency that were commonly reported. This understanding of ZnO short range order and structure will be invaluable for further development of solid state lighting and other optoelectronic device applications. - Graphical abstract: Highlights: Black-Right-Pointing-Pointer ZnO powders have been synthesized through an aqueous solution method. Black-Right-Pointing-Pointer Defect structure studied using XAS and XPDF. Black-Right-Pointing-Pointer Zn-Zn correlations are less in the ZnO powders synthesized in solution than bulk. Black-Right-Pointing-Pointer Zn vacancies are present in the powders synthesized. Black-Right-Pointing-Pointer EXAFS and XPDF, when used complementary, are useful characterization techniques.

  10. Achieving Uniform Carriers Distribution in MBE Grown Compositionally Graded InGaN Multiple-Quantum-Well LEDs

    KAUST Repository

    Mishra, Pawan; Janjua, Bilal; Ng, Tien Khee; Shen, Chao; Salhi, Abdelmajid; Alyamani, Ahmed; El-Desouki, Munir; Ooi, Boon S.

    2015-01-01

    We investigated the design and growth of compositionally-graded InGaN multiple quantum wells (MQW) based light-emitting diode (LED) without an electron-blocking layer (EBL). Numerical investigation showed uniform carrier distribution in the active region, and higher radiative recombination rate for the optimized graded-MQW design, i.e. In0→xGa1→(1-x)N / InxGa(1-x)N / Inx→0Ga(1-x)→1N, as compared to the conventional stepped-MQW-LED. The composition-grading schemes, such as linear, parabolic, and Fermi-function profiles were numerically investigated for comparison. The stepped- and graded-MQW-LED were then grown using plasma assisted molecular beam epitaxy (PAMBE) through surface-stoichiometry optimization based on reflection high-energy electron-diffraction (RHEED) in-situ observations. Stepped- and graded-MQW-LED showed efficiency roll over at 160 A/cm2 and 275 A/cm2, respectively. The extended threshold current density roll-over (droop) in graded-MQW-LED is due to the improvement in carrier uniformity and radiative recombination rate, consistent with the numerical simulation.

  11. Achieving Uniform Carriers Distribution in MBE Grown Compositionally Graded InGaN Multiple-Quantum-Well LEDs

    KAUST Repository

    Mishra, Pawan

    2015-05-06

    We investigated the design and growth of compositionally-graded InGaN multiple quantum wells (MQW) based light-emitting diode (LED) without an electron-blocking layer (EBL). Numerical investigation showed uniform carrier distribution in the active region, and higher radiative recombination rate for the optimized graded-MQW design, i.e. In0→xGa1→(1-x)N / InxGa(1-x)N / Inx→0Ga(1-x)→1N, as compared to the conventional stepped-MQW-LED. The composition-grading schemes, such as linear, parabolic, and Fermi-function profiles were numerically investigated for comparison. The stepped- and graded-MQW-LED were then grown using plasma assisted molecular beam epitaxy (PAMBE) through surface-stoichiometry optimization based on reflection high-energy electron-diffraction (RHEED) in-situ observations. Stepped- and graded-MQW-LED showed efficiency roll over at 160 A/cm2 and 275 A/cm2, respectively. The extended threshold current density roll-over (droop) in graded-MQW-LED is due to the improvement in carrier uniformity and radiative recombination rate, consistent with the numerical simulation.

  12. Comparative Study of Lettuce and Radish Grown Under Red and Blue Light-Emitting Diodes (LEDs) and White Fluorescent Lamps

    Science.gov (United States)

    Mickens, Matthew A.

    2012-01-01

    Growing vegetable crops in space will be an essential part of sustaining astronauts during long-term missions. To drive photosynthesis, red and blue light-emitting diodes (LEDs) have attracted attention because of their efficiency, longevity, small size, and safety. In efforts to optimize crop production, there have also been recent interests in analyzing the subtle effects of green light on plant growth, and to determine if it serves as a source of growth enhancement or suppression. A comparative study was performed on two short cycle crops of lettuce (Outredgeous) and radish (Cherry Bomb) grown under two light treatments. The first treatment being red and blue LEDs, and the second treatment consisting of white fluorescent lamps which contain a portion of green light. In addition to comparing biomass production, physiological characterizations were conducted on how the light treatments influence morphology, water use, chlorophyll content, and the production of A TP within plant tissues.

  13. The improvement of GaN-based LED grown on concave nano-pattern sapphire substrate with SiO2 blocking layer

    International Nuclear Information System (INIS)

    Lin, Jyun-Hao; Huang, Shyh-Jer; Su, Yan-Kuin; Huang, Kai-Wen

    2015-01-01

    Highlights: • Concave nano-patterned sapphire substrates with SiO 2 blocking layer. • The IQE is almost two times larger than that of conventional one. • The EQE was extremely enhanced more than 100%. - Abstract: In contrast to convex nano-pattern sapphire substrates (NPSS), which are frequently used to fabricate high-quality nitride-based light-emitting diodes (LEDs), concave NPSS have been paid relatively less attention. In this study, a concave NPSS was fabricated, and its nitride epitaxial growth process was evaluated in a step by step manner. A SiO 2 layer was used to avoid nucleation over the sidewall and bottom of the nano-patterns to reduce dislocation reformation. Traditional LED structures were grown on the NPSS layer to determine its influence on device performance. X-ray diffraction, etched pit density, inverse leakage current, and internal quantum efficiency (IQE) results showed that dislocations and non-radiative recombination centers are reduced by the NPSS constructed with a SiO 2 blocking layer. An IQE twice that on a planar substrate was also achieved; such a high IQE significantly enhanced the external quantum efficiency of the resultant device. Taken together, the results demonstrate that the SiO 2 blocking layer proposed in this work can enhance the performance of LEDs.

  14. Ex-situ activation of magnesium acceptors in InGaN/LED-structures

    Energy Technology Data Exchange (ETDEWEB)

    Kusch, Gunnar; Frentrup, Martin; Stellmach, Joachim; Kolbe, Tim; Wernicke, Tim; Pristovsek, Markus; Kneissl, Michael [Technische Universitaet Berlin, Institut fuer Festkoerperphysik, Hardenbergstr. 36, 10623 Berlin (Germany)

    2011-07-01

    One of the main problems limiting the output power of group-III-nitride compound light emitting diodes (LEDs) and laser diodes (LD) is the p-doping of nitrides with magnesium (Mg). During metal-organic vapor phase epitaxy (MOVPE) growth of (Al)GaN:Mg magnesium acceptors are passivated by hydrogen (H). By thermal annealing under nitrogen atmosphere the Mg-H bond can be cracked, thus activating the Mg acceptor. We have investigated ex-situ Mg-activation of the p-GaN layer and p-AlGaN electron blocking layer (EBL) in LEDs grown by MOVPE. Especially the activation of the AlGaN EBL is crucial. Simulations show, that a high doping level is required for effective electron blocking and a high injection efficiency. Additionally the acceptor activation energy is expected to increase with increasing Al-content, reducing the free hole concentration in the EBL. Electroluminescence spectroscopy (EL) was performed to determine the influence of the activation on the external quantum efficiency of the LED structure. Furthermore we used CV measurements to determine the Mg-acceptor concentration.

  15. Luminaries-level structure improvement of LEDs for heat dissipation ...

    Indian Academy of Sciences (India)

    the natural convection heat transfer process of LED luminaries is simulated by compu- ... Heat dissipation has become one of the key problems limiting the large ... micro channel heat radiator, are able to reject heat efficiently, they may make LED ... convection heat transfer coefficient, for example, adopting finned surface to ...

  16. Characterization of 380nm UV-LEDs grown on free-standing GaN by atmospheric-pressure metal-organic chemical vapor deposition

    Science.gov (United States)

    Shieh, C. Y.; Li, Z. Y.; Kuo, H. C.; Chang, J. Y.; Chi, G. C.

    2014-03-01

    We reported the defects and optical characterizations of the ultraviolet light-emitting diodes grown on free-standing GaN substrate (FS-GaN) and sapphire. Cross-sectional transmission electron microscopy (TEM) images showed that the total defect densities of grown UV LEDs on FS-GaN and sapphire including edge, screw and mixed type were 3.6×106 cm-2 and 5.5×108 cm-2. When substrate of UV LEDs was changed from sapphire to FS-GaN, it can be clearly found that the crystallography of GaN epilayers was drastically different from that GaN epilayers on sapphire. Besides, the microstructures or indium clustering can be not observed at UV LEDs on FS-GaN from TEM measurement. The internal quantum efficiency of UVLEDs on FS-GaN and sapphire were 34.8 % and 39.4 % respectively, which attributed to indium clustering in multi-layers quantum wells (MQWs) of UV LEDs on sapphire. The relationship between indiumclustering and efficiency droop were investigated by temperature-dependent electroluminescence (TDEL) measurements.

  17. Effects of the number of wells on the performance of green InGaN/GaN LEDs with V-shape pits grown on Si substrates

    Science.gov (United States)

    Wu, Qingfeng; Zhang, Jianli; Mo, Chunlan; Wang, Xiaolan; Quan, Zhijue; Wu, Xiaoming; Pan, Shuan; Wang, Guangxu; Liu, Junlin; Jiang, Fengyi

    2018-02-01

    The effect of the number of wells on quantum efficiency and forward voltage of vertical green InGaN/GaN multiple quantum wells (MQWs) light-emitting diodes (LEDs) grown on Si substrate has been experimentally investigated. We have prepared three LED samples with 3, 5 and 7 wells. Electroluminescence measurement shows that the LED with 5 wells has the highest external quantum efficiency (EQE) and the lowest forward voltage. It is observed that V-shaped pits grow up in size and density with an increase in quantum well number by means of scan electron microscope. Due to more hole injection via V-shaped pits, a larger area ratio of pits as a result of more number of wells would bring a lower forward voltage and a higher EQE. However, besides the increasing series resistance would bring a higher forward voltage, the interface of MQWs would become rougher and deteriorate the emission efficiency when increasing the wells number.

  18. High-quality uniaxial In(x)Ga(1-x)N/GaN multiple quantum well (MQW) nanowires (NWs) on Si(111) grown by metal-organic chemical vapor deposition (MOCVD) and light-emitting diode (LED) fabrication.

    Science.gov (United States)

    Ra, Yong-Ho; Navamathavan, R; Park, Ji-Hyeon; Lee, Cheul-Ro

    2013-03-01

    This article describes the growth and device characteristics of vertically aligned high-quality uniaxial p-GaN/InxGa1-xN/GaN multiple quantum wells (MQW)/n-GaN nanowires (NWs) on Si(111) substrates grown by metal-organic chemical vapor deposition (MOCVD) technique. The resultant nanowires (NWs), with a diameter of 200-250 nm, have an average length of 2 μm. The feasibility of growing high-quality NWs with well-controlled indium composition MQW structure is demonstrated. These resultant NWs grown on Si(111) substrates were utilized for fabricating vertical-type light-emitting diodes (LEDs). The steep and intense photoluminescence (PL) and cathodoluminescence (CL) spectra are observed, based on the strain-free NWs on Si(111) substrates. High-resolution transmission electron microscopy (HR-TEM) analysis revealed that the MQW NWs are grown along the c-plane with uniform thickness. The current-voltage (I-V) characteristics of these NWs exhibited typical p-n junction LEDs and showed a sharp onset voltage at 2.75 V in the forward bias. The output power is linearly increased with increasing current. The result indicates that the pulsed MOCVD technique is an effective method to grow uniaxial p-GaN/InxGa1-xN/GaN MQW/n-GaN NWs on Si(111), which is more advantageous than other growth techniques, such as molecular beam epitaxy. These results suggest the uniaxial NWs are promising to allow flat-band quantum structures, which can enhance the efficiency of LEDs.

  19. Polarization-induced hole doping in N-polar III-nitride LED grown by metalorganic chemical vapor deposition

    KAUST Repository

    Yan, Long

    2018-05-03

    Polarization-induced doping has been shown to be effective for wide-bandgap III-nitrides. In this work, we demonstrated a significantly enhanced hole concentration via linearly grading an N-polar AlxGa1-xN (x = 0–0.3) layer grown by metal-organic chemical vapor deposition. The hole concentration increased by ∼17 times compared to that of N-polar p-GaN at 300 K. The fitting results of temperature-dependent hole concentration indicated that the holes in the graded p-AlGaN layer comprised both polarization-induced and thermally activated ones. By optimizing the growth conditions, the hole concentration was further increased to 9.0 × 1017 cm−3 in the graded AlGaN layer. The N-polar blue-violet light-emitting device with the graded p-AlGaN shows stronger electroluminescence than the one with the conventional p-GaN. The study indicates the potential of the polarization doping technique in high-performance N-polar light-emitting devices.

  20. Polarization-induced hole doping in N-polar III-nitride LED grown by metalorganic chemical vapor deposition

    KAUST Repository

    Yan, Long; Zhang, Yuantao; Han, Xu; Deng, Gaoqiang; Li, Pengchong; Yu, Ye; Chen, Liang; Li, Xiaohang; Song, Junfeng

    2018-01-01

    Polarization-induced doping has been shown to be effective for wide-bandgap III-nitrides. In this work, we demonstrated a significantly enhanced hole concentration via linearly grading an N-polar AlxGa1-xN (x = 0–0.3) layer grown by metal-organic chemical vapor deposition. The hole concentration increased by ∼17 times compared to that of N-polar p-GaN at 300 K. The fitting results of temperature-dependent hole concentration indicated that the holes in the graded p-AlGaN layer comprised both polarization-induced and thermally activated ones. By optimizing the growth conditions, the hole concentration was further increased to 9.0 × 1017 cm−3 in the graded AlGaN layer. The N-polar blue-violet light-emitting device with the graded p-AlGaN shows stronger electroluminescence than the one with the conventional p-GaN. The study indicates the potential of the polarization doping technique in high-performance N-polar light-emitting devices.

  1. The structure of Ta nanopillars grown by glancing angle deposition

    International Nuclear Information System (INIS)

    Zhou, C.M.; Gall, D.

    2006-01-01

    Regular arrays of Ta nanopillars, 200 nm wide and 500 nm tall, were grown on SiO 2 nanosphere patterns by glancing angle sputter deposition (GLAD). Plan-view and cross-sectional scanning electron microscopy analyses show dramatic changes in the structure and morphology of individual nanopillars as a function of growth temperature T s ranging from 200 to 700 deg. C. At low temperatures, T s ≤ 300 deg. C, single nanopillars develop on each sphere and branch into subpillars near the pillar top. In contrast, T s ≥ 500 deg. C leads to branching during the nucleation stage at the pillar bottom. The top branching at low T s is associated with surface mounds on a growing pillar that, due to atomic shadowing, develop into separated subpillars. At high T s , the branching occurs during the nucleation stage where multiple nuclei on a single SiO 2 sphere develop into subpillars during a competitive growth mode which, in turn, leads to intercolumnar competition and the extinction of some nanopillars

  2. Structural and optical characteristics of InN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition

    International Nuclear Information System (INIS)

    Kim, Je Won; Lee, Kyu Han; Hong, Sangsu

    2007-01-01

    The structural and electrical properties of InN/GaN multiple quantum wells, which were grown by metalorganic chemical vapor deposition, were characterized by transmission electron microscopy (TEM) and electroluminescence measurements. From the TEM micrographs, it was shown that the well layer was grown like a quantum dot. The well layer is expected to be the nano-size structures in the InN multiple quantum well layers. The multi-photon confocal laser scanning microscopy was used to investigate the optical properties of the light emitting diode (LED) structures with InN active layers. It was found that the two-photon excitation was possible in InN system. The pit density was measured by using the far-field optical technique. In the varied current conditions, the blue LED with the InN multiple quantum well structures did not have the wavelength shift. With this result, we can expect that the white LEDs with the InN multiple quantum well structures do not show the color temperature changes with the variations of applied currents

  3. Examining Young Recreational Male Soccer Players' Experience in Adult- and Peer-Led Structures

    Science.gov (United States)

    Imtiaz, Faizan; Hancock, David J.; Côté, Jean

    2016-01-01

    Purpose: Youth sport has the potential to be one of the healthiest and most beneficial activities in which children can partake. Participation in a combination of adult-led and peer-led sport structures appears to lead to favorable outcomes such as enhanced physical fitness, as well as social and emotional development. The purpose of the present…

  4. White emission from non-planar InGaN/GaN MQW LEDs grown on GaN template with truncated hexagonal pyramids.

    Science.gov (United States)

    Lee, Ming-Lun; Yeh, Yu-Hsiang; Tu, Shang-Ju; Chen, P C; Lai, Wei-Chih; Sheu, Jinn-Kong

    2015-04-06

    Non-planar InGaN/GaN multiple quantum well (MQW) structures are grown on a GaN template with truncated hexagonal pyramids (THPs) featuring c-plane and r-plane surfaces. The THP array is formed by the regrowth of the GaN layer on a selective-area Si-implanted GaN template. Transmission electron microscopy shows that the InGaN/GaN epitaxial layers regrown on the THPs exhibit different growth rates and indium compositions of the InGaN layer between the c-plane and r-plane surfaces. Consequently, InGaN/GaN MQW light-emitting diodes grown on the GaN THP array emit multiple wavelengths approaching near white light.

  5. GaAsBi/GaAs multi-quantum well LED grown by molecular beam epitaxy using a two-substrate-temperature technique

    Science.gov (United States)

    Kisan Patil, Pallavi; Luna, Esperanza; Matsuda, Teruyoshi; Yamada, Kohki; Kamiya, Keisuke; Ishikawa, Fumitaro; Shimomura, Satoshi

    2017-03-01

    We report a GaAs0.96Bi0.04/GaAs multiple quantum well (MQW) light emitting diode (LED) grown by molecular beam epitaxy using a two-substrate-temperature (TST) technique. In particular, the QWs and the barriers in the intrinsic region were grown at the different temperatures of {T}{{GaAsBi}} = 350 °C and {T}{{GaAs}} = 550 ^\\circ {{C}}, respectively. Investigations of the microstructure using transmission electron microscopy (TEM) reveal homogeneous MQWs free of extended defects. Furthermore, the local determination of the Bi distribution profile across the MQWs region using TEM techniques confirm the uniform Bi distribution, while revealing a slightly chemically graded GaAs-on-GaAsBi interface due to Bi surface segregation. Despite this small broadening, we found that Bi segregation is significantly reduced (up to 18% reduction) compared to previous reports on Bi segregation in GaAsBi/GaAs MQWs. Hence, the TST procedure proves as a very efficient method to reduce Bi segregation and thus increase the quality of the layers and interfaces. These improvements positively reflect in the optical properties. Room temperature photoluminescence and electroluminescence (EL) at 1.23 μm emission wavelength are successfully demonstrated using TST MQWs containing less Bi content than in previous reports. Finally, LED fabricated using the present TST technique show current-voltage (I-V) curves with a forward voltage of 3.3 V at an injection current of 130 mA under 1.0 kA cm-2 current excitation. These results not only demonstrate that TST technique provides optical device quality GaAsBi/GaAs MQWs but highlight the relevance of TST-based growth techniques on the fabrication of future heterostructure devices based on dilute bismides.

  6. Investigation of structure in the modular light pipe component for LED automotive lamp

    Science.gov (United States)

    Chen, Hsi-Chao; Zhou, Yang; Huang, Chien-Sheng; Jhong, Wan-Ling; Cheng, Bo-Wei; Jhang, Jhe-Ming

    2014-09-01

    Light-Emitting Diodes (LEDs) have the advantages of small length, long lifetime, fast response time (μs), low voltage, good mechanical properties and environmental protection. Furthermore, LEDs could replace the halogen lamps to avoid the mercury pollution and economize the use of energy. Therefore, the LEDs could instead of the traditional lamp in the future and became an important light source. The proposal of this study was to investigate the effects of the structure and length of the reflector component for a LED automotive lamp. The novel LED automotive lamp was assembled by several different modularization columnar. The optimized design of the different structure and the length to the reflector was simulated by software TracePro. The design result must met the vehicle regulation of United Nations Economic Commission for Europe (UNECE) such as ECE-R19 etc. The structure of the light pipe could be designed by two steps structure. Then constitute the proper structure and choose different power LED to meet the luminous intensity of the vehicle regulation. The simulation result shows the proper structure and length has the best total luminous flux and a high luminous efficiency for the system. Also, the stray light could meet the vehicle regulation of ECE R19. Finally, the experimental result of the selected structure and length of the light pipe could match the simulation result above 80%.

  7. Analysis and Comparison of Magnetic Structures in a Tapped Boost Converter for LED Applications

    DEFF Research Database (Denmark)

    Mira Albert, Maria del Carmen; Knott, Arnold; Andersen, Michael A. E.

    2014-01-01

    This paper presents an an alysis and comparison of magnetics structures in a tapped boost converter for LED applications. The magnetic structure is a coupled inductor which is analyzed in a conventional wire-wound core as well as in a planar structure for different interleaving winding arrangements...

  8. Three-dimensionally structured silicon as a substrate for the MOVPE growth of GaN nanoLEDs

    Energy Technology Data Exchange (ETDEWEB)

    Fuendling, Soenke; Li, Shunfeng; Soekmen, Uensal; Merzsch, Stephan; Peiner, Erwin; Wehmann, Hergo-Heinrich; Waag, Andreas [Institut fuer Halbleitertechnik, TU Braunschweig, Braunschweig (Germany); Hinze, Peter; Weimann, Thomas [Physikalisch-Technische Bundesanstalt (PTB), Braunschweig (Germany); Jahn, Uwe; Trampert, Achim; Riechert, Henning [Paul-Drude-Institut fuer Festkoerperelektronik, Berlin (Germany)

    2009-06-15

    Three-dimensionally patterned Si(111) substrates are used to grow GaN based heterostructures by metalorganic vapour phase epitaxy, with the goal of fabricating well controlled, defect reduced GaN-based nanoLEDs. In contrast to other approaches to achieve GaN nanorods, we employed silicon substrates with deep etched nanopillars to control the GaN nanorods growth by varying the size and distance of the Si pillars. The small footprint of GaN nanorods grown on Si pillars minimise the influence of the lattice mismatched substrate and improve the material quality. For the Si pillars an inductively coupled plasma dry-etching process at cryogenic temperature has been developed. An InGaN/GaN multi quantum well (MQW) structure has been incorporated into the GaN nanorods. We found GaN nanostructures grown on top of the silicon pillars with a pyramidal shape. This shape results from a competitive growth on different facets as well as from surface diffusion of the growth species. Spatially resolved optical properties of the structures are analysed by cathodoluminescence. Strongly spatial-dependent MQW emission spectra indicate the growth rate differences on top of the rods. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Solution processable inverted structure ZnO-organic hybrid heterojuction white LEDs

    Science.gov (United States)

    Bano, N.; Hussain, I.; Soomro, M. Y.; EL-Naggar, A. M.; Albassam, A. A.

    2018-05-01

    Improving luminance efficiency and colour purity are the most important challenges for zinc oxide (ZnO)-organic hybrid heterojunction light emitting diodes (LEDs), affecting their large area applications. If ZnO-organic hybrid heterojunction white LEDs are fabricated by a hydrothermal method, it is difficult to obtain pure and stable blue emission from PFO due to the presence of an undesirable green emission. In this paper, we present an inverted-structure ZnO-organic hybrid heterojunction LED to avoid green emission from PFO, which mainly originates during device processing. With this configuration, each ZnO nanorod (NR) forms a discrete p-n junction; therefore, large-area white LEDs can be designed without compromising the junction area. The configuration used for this novel structure is glass/ZnO NRs/PFO/PEDOT:PSS/L-ITO, which enables the development of efficient, large-area and low-cost hybrid heterojunction LEDs. Inverted-structure ZnO-organic hybrid heterojunction white LEDs offer several improvements in terms of brightness, size, colour, external quantum efficiency and a wider applicability as compared to normal architecture LEDs.

  10. A matrix structured LED backlight system with 2D-DHT local dimming method

    Science.gov (United States)

    Liu, Jia; Li, Yang; Du, Sidan

    To reduce the number of the drivers in the conventional local dimming method for LCDs, a novel LED backlight local dimming system is proposed in this paper. The backlight of this system is generated by 2D discrete Hadamard transform and its matrix structured LED modules. Compared with the conventional 2D local dimming method, the proposed method costs much fewer drivers but with little degradation.

  11. Light extraction from GaN-based LED structures on silicon-on-insulator substrates

    Energy Technology Data Exchange (ETDEWEB)

    Tripathy, S.; Teo, S.L.; Lin, V.K.X.; Chen, M.F. [Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology, and Research), 117602 (Singapore); Dadgar, A.; Krost, A. [Institut fuer Exerimentelle Physik, Otto-von Guericke Universitaet Magdeburg, Universitaetsplatz 1, 39016 Magdeburg (Germany); AZZURRO Semiconductors AG, Universitaetsplatz 1, 39016 Magdeburg (Germany); Christen, J. [Institut fuer Exerimentelle Physik, Otto-von Guericke Universitaet Magdeburg, Universitaetsplatz 1, 39016 Magdeburg (Germany)

    2010-01-15

    Nano-patterning of GaN-based devices is a promising technology in the development of high output power devices. Recent researches have been focused on the realization of two-dimensional (2D) photonic crystal (PhC) structure to improve light extraction efficiency and to control the direction of emission. In this study, we have demonstrated improved light extraction from green light emitting diode (LED) structures on thin silicon-on-insulator (SOI) substrates using surface nanopatterning. Scanning electron microscopy (SEM) is used to probe the size, shape, and etch depth of nano-patterns on the LED surfaces. Different types of nanopatterns were created by e-beam lithography and inductively coupled plasma etching. The LED structures after post processing are studied by photoluminescence (PL) measurements. The GaN nanophotonic structures formed by ICP etching led to more than five-fold increase in the intensity of the green emission. The improved light extraction is due to the combination of SOI substrate reflectivity and photonic structures on top GaN LED surfaces. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Structural optimization of a microjet based cooling system for high power LEDs

    Energy Technology Data Exchange (ETDEWEB)

    Sheng Liu; Zhiyin Gan [Institute for Microsystems, School of Mechanical Engineering, Huazhong University of Science and Technology, Wuhan (China); Wuhan National Lab of Optoelectronics, Huazhong University of Science and Technology, Wuhan (China); Jianghui Yang [School of Energy and Power Engineering, Huazhong University of Science and Technology, Wuhan (China); Xiaobing Luo [Wuhan National Lab of Optoelectronics, Huazhong University of Science and Technology, Wuhan (China); School of Energy and Power Engineering, Huazhong University of Science and Technology, Wuhan (China)

    2008-08-15

    Based on the previous experiments and simulations reported by the present authors, it was found the cooling system could be optimized to obtain better performance. In this paper, the microjet cooling systems with three different microjet structures were numerically investigated. The numerical model was proven by the experiments. The optimization results demonstrate that the microjet structure with one single inlet but two outlets can achieve better cooling performance. The simulation results show that the maximum temperature of the LED substrate cooled by the optimized microjet cooling device was 23 K lower than that of the LED substrate cooled by the present experimental cooling system. (author)

  13. Resonant Plasmonic Enhancement of InGaN/GaN LED using Periodically Structured Ag Nanodisks

    DEFF Research Database (Denmark)

    Fadil, Ahmed; Iida, Daisuke; Zhu, Xiaolong

    2013-01-01

    Ag nanodisks are fabricated on GaN-based LED to enhance emission efficiency. Nanosphere lithography is used to obtain a periodic nano-structure, and a photoluminescence enhancement of 2.7 is reported with Ag nanodisk diameter of 330 nm.......Ag nanodisks are fabricated on GaN-based LED to enhance emission efficiency. Nanosphere lithography is used to obtain a periodic nano-structure, and a photoluminescence enhancement of 2.7 is reported with Ag nanodisk diameter of 330 nm....

  14. Optimization design of LED heat dissipation structure based on strip fins

    Science.gov (United States)

    Xue, Lingyun; Wan, Wenbin; Chen, Qingguang; Rao, Huanle; Xu, Ping

    2018-03-01

    To solve the heat dissipation problem of LED, a radiator structure based on strip fins is designed and the method to optimize the structure parameters of strip fins is proposed in this paper. The combination of RBF neural networks and particle swarm optimization (PSO) algorithm is used for modeling and optimization respectively. During the experiment, the 150 datasets of LED junction temperature when structure parameters of number of strip fins, length, width and height of the fins have different values are obtained by ANSYS software. Then RBF neural network is applied to build the non-linear regression model and the parameters optimization of structure based on particle swarm optimization algorithm is performed with this model. The experimental results show that the lowest LED junction temperature reaches 43.88 degrees when the number of hidden layer nodes in RBF neural network is 10, the two learning factors in particle swarm optimization algorithm are 0.5, 0.5 respectively, the inertia factor is 1 and the maximum number of iterations is 100, and now the number of fins is 64, the distribution structure is 8*8, and the length, width and height of fins are 4.3mm, 4.48mm and 55.3mm respectively. To compare the modeling and optimization results, LED junction temperature at the optimized structure parameters was simulated and the result is 43.592°C which approximately equals to the optimal result. Compared with the ordinary plate-fin-type radiator structure whose temperature is 56.38°C, the structure greatly enhances heat dissipation performance of the structure.

  15. Effectiveness of structured, hospital-based, nurse-led atrial fibrillation clinics

    DEFF Research Database (Denmark)

    Qvist, Ina; Hendriks, Jeroen M L; Møller, Dorthe S

    2016-01-01

    OBJECTIVE: A previous randomised trial showed that structured, nurse-led atrial fibrillation (AF) care is superior to conventional AF care, although further research is needed to determine the outcomes of such care in a real-world setting. We compared the outcomes of patients in real-world, nurse...

  16. LED; Zum Thema LED

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2010-07-01

    This collection of articles on the subject of light emitting diodes (LED) provides technical information on LED technology, examines latest developments and provides examples of LED use in practice. An 'ABC' of LED technology is presented and fifteen common LED mistakes are noted. The chances and risks of LED use are discussed as is the retrofitting of lighting installations with LEDs. The use of LEDs in street lighting is examined. The journal also includes interviews with architects and a lighting designer. Practical examples of the use of LEDs include the refurbished parliamentary library in Berne, their use in the bird sanctuary headquarters in Sempach, Switzerland, as well as LED use in sales outlets. Also, the use of LED lighting in a spa gazebo in Lucerne is examined.

  17. Conformity and structure of titanium oxide films grown by atomic layer deposition on silicon substrates

    Energy Technology Data Exchange (ETDEWEB)

    Jogi, Indrek [University of Tartu, Institute of Experimental Physics and Technology, Taehe 4, 51010, Tartu (Estonia)], E-mail: indrek.jogi@ut.ee; Paers, Martti; Aarik, Jaan; Aidla, Aleks [University of Tartu, Institute of Physics, Riia 142, 51014, Tartu (Estonia); Laan, Matti [University of Tartu, Institute of Experimental Physics and Technology, Taehe 4, 51010, Tartu (Estonia); Sundqvist, Jonas; Oberbeck, Lars; Heitmann, Johannes [Qimonda Dresden GmbH and Co. OHG, Koenigsbruecker Strasse 180, 01099, Dresden (Germany); Kukli, Kaupo [University of Tartu, Institute of Experimental Physics and Technology, Taehe 4, 51010, Tartu (Estonia)

    2008-06-02

    Conformity and phase structure of atomic layer deposited TiO{sub 2} thin films grown on silicon substrates were studied. The films were grown using TiCl{sub 4} and Ti(OC{sub 2}H{sub 5}){sub 4} as titanium precursors in the temperature range from 125 to 500 {sup o}C. In all cases perfect conformal growth was achieved on patterned substrates with elliptical holes of 7.5 {mu}m depth and aspect ratio of about 1:40. Conformal growth was achieved with process parameters similar to those optimized for the growth on planar wafers. The dominant crystalline phase in the as-grown films was anatase, with some contribution from rutile at relatively higher temperatures. Annealing in the oxygen ambient resulted in (re)crystallization whereas the effect of annealing depended markedly on the precursors used in the deposition process. Compared to films grown from TiCl{sub 4}, the films grown from Ti(OC{sub 2}H{sub 5}){sub 4} were transformed into rutile in somewhat greater extent, whereas in terms of step coverage the films grown from Ti(OC{sub 2}H{sub 5}){sub 4} remained somewhat inferior compared to the films grown from TiCl{sub 4}.

  18. Multilayer porous structures of HVPE and MOCVD grown GaN for photonic applications

    Science.gov (United States)

    Braniste, T.; Ciers, Joachim; Monaico, Ed.; Martin, D.; Carlin, J.-F.; Ursaki, V. V.; Sergentu, V. V.; Tiginyanu, I. M.; Grandjean, N.

    2017-02-01

    In this paper we report on a comparative study of electrochemical processes for the preparation of multilayer porous structures in hydride vapor phase epitaxy (HVPE) and metal organic chemical vapor phase deposition (MOCVD) grown GaN. It was found that in HVPE-grown GaN, multilayer porous structures are obtained due to self-organization processes leading to a fine modulation of doping during the crystal growth. However, these processes are not totally under control. Multilayer porous structures with a controlled design have been produced by optimizing the technological process of electrochemical etching in MOCVD-grown samples, consisting of five pairs of thin layers with alternating-doping profiles. The samples have been characterized by SEM imaging, photoluminescence spectroscopy, and micro-reflectivity measurements, accompanied by transfer matrix analysis and simulations by a method developed for the calculation of optical reflection spectra. We demonstrate the applicability of the produced structures for the design of Bragg reflectors.

  19. structural reliability of the nigerian grown abura timber bridge beam

    African Journals Online (AJOL)

    ENGR. J. I. AGUWA

    2013-07-02

    Jul 2, 2013 ... Structural analysis and deterministic design of a timber bridge beam using the Nigerian ... practice especially when it involves naturally occuring materials .... the beam due to distributed loads is; from [15]. (4). It is assumed that ...

  20. Light outputs of LED with various refractive indices and geometrical structures of encapsulants

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Kyung-Tae [Chosun University, Gwangju (Korea, Republic of); Jo, Kyoung-Woo; Hwang, Jung-Ha; Kwon, Ho-Ki [LG Innotek Co., Ltd., Seoul (Korea, Republic of); Park, Si-Hyun [Yeungnam University, Gyeongsan (Korea, Republic of)

    2010-12-15

    In this paper we present the results of experiments and simulations for the light output power from LEDs for various refractive indices and the geometrical structures of the LED encapsulants. InGaN-based LED chips were fabricated and were bonded in Ag reflector cups within polyphthalamide (PPA) chip carriers; then, encapsulants with various refractive indices and the geometrical structures were fabricated onto them by using a dispensing method. The light output power with the encapsulant was shown to increase with the refractive index of the encapsulant materials in the case of a spherical encapsulant while it decreased in the case of a flat geometry encapsulant. We performed ray tracing simulations for the LED light output and confirmed that the simulation results were consistent with our experimentally measured results. In addition, the light output with the encapsulant rapidly increased with the sidewall angle of the chip carrier in the case of the flat encapsulant while it was not affected by the sidewall angle, remaining constant, in the case of the spherical geometry.

  1. Light outputs of LED with various refractive indices and geometrical structures of encapsulants

    International Nuclear Information System (INIS)

    Kim, Kyung-Tae; Jo, Kyoung-Woo; Hwang, Jung-Ha; Kwon, Ho-Ki; Park, Si-Hyun

    2010-01-01

    In this paper we present the results of experiments and simulations for the light output power from LEDs for various refractive indices and the geometrical structures of the LED encapsulants. InGaN-based LED chips were fabricated and were bonded in Ag reflector cups within polyphthalamide (PPA) chip carriers; then, encapsulants with various refractive indices and the geometrical structures were fabricated onto them by using a dispensing method. The light output power with the encapsulant was shown to increase with the refractive index of the encapsulant materials in the case of a spherical encapsulant while it decreased in the case of a flat geometry encapsulant. We performed ray tracing simulations for the LED light output and confirmed that the simulation results were consistent with our experimentally measured results. In addition, the light output with the encapsulant rapidly increased with the sidewall angle of the chip carrier in the case of the flat encapsulant while it was not affected by the sidewall angle, remaining constant, in the case of the spherical geometry.

  2. Palladium-based on-wafer electroluminescence studies of GaN-based LED structures

    Energy Technology Data Exchange (ETDEWEB)

    Salcianu, C.O.; Thrush, E.J.; Humphreys, C.J. [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom); Plumb, R.G. [Centre for Photonic Systems, Department of Engineering, University of Cambridge, Cambridge CB3 0FD (United Kingdom); Boyd, A.R.; Rockenfeller, O.; Schmitz, D.; Heuken, M. [AIXTRON AG, Kackertstr. 15-17, 52072 Aachen (Germany)

    2008-07-01

    Electroluminescence (EL) testing of Light Emitting Diode (LED) structures is usually done at the chip level. Assessing the optical and electrical properties of LED structures at the wafer scale prior to their processing would improve the cost effectiveness of producing LED-lamps. A non-destructive method for studying the luminescence properties of the structure at the wafer-scale is photoluminescence (PL). However, the relationship between the on-wafer PL data and the final device EL can be less than straightforward (Y. H Aliyu et al., Meas. Sci. Technol. 8, 437 (1997)) as the two techniques employ different carrier injection mechanisms. This paper provides an overview of some different techniques in which palladium is used as a contact in order to obtain on-wafer electroluminescence information which could be used to screen wafers prior to processing into final devices. Quick mapping of the electrical and optical characteristics was performed using either palladium needle electrodes directly, or using the latter in conjunction with evaporated palladium contacts to inject both electrons and holes into the active region via the p-type capping layer of the structure. For comparison, indium was also used to make contact to the n-layer so that electrons could be directly injected into that layer. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Differences in the structure of outpatient diabetes care between endocrinologist-led and general physician-led services.

    LENUS (Irish Health Repository)

    O Donnell, Máire

    2013-11-25

    Despite a shift in diabetes care internationally from secondary to primary care, diabetes care in the Republic of Ireland remains very hospital-based. Significant variation in the facilities and resources available to hospitals providing outpatient diabetes care have been reported in the UK. The aim of this study was to ascertain the structure of outpatient diabetes care in public hospitals in the Republic of Ireland and whether differences existed in services provided across hospitals.

  4. Structural and magnetic properties of Gd/Fe multilayers grown by pulsed laser deposition

    DEFF Research Database (Denmark)

    Kant, K. Mohan; Bahl, Christian Robert Haffenden; Pryds, Nini

    2010-01-01

    This work investigates the structural and the magnetic properties of Gd/Fe multilayered thin films grown by pulsed laser deposition onto Si (001) substrates at room temperature. he Fe layer thickness is varied from 70 to 150 nm and its effect on the structural and magnetic properties of Fe/Gd/Fe ...

  5. Structure of a randomly grown 2-d network

    DEFF Research Database (Denmark)

    Ajazi, Fioralba; Napolitano, George M.; Turova, Tatyana

    2015-01-01

    We introduce a growing random network on a plane as a model of a growing neuronal network. The properties of the structure of the induced graph are derived. We compare our results with available data. In particular, it is shown that depending on the parameters of the model the system undergoes in...... in time different phases of the structure. We conclude with a possible explanation of some empirical data on the connections between neurons.......We introduce a growing random network on a plane as a model of a growing neuronal network. The properties of the structure of the induced graph are derived. We compare our results with available data. In particular, it is shown that depending on the parameters of the model the system undergoes...

  6. The structural grading of young South African grown Pinus patula ...

    African Journals Online (AJOL)

    The young P. patula timber tested in this study had good bending strength (MOR) properties with higher characteristic grade values than required. The timber, however, had low stiffness and did not comply with the SANS 10163-1 requirements for mean modulus of elasticity on edge (MOEedge) for any of the structural ...

  7. Electrochemically grown metallic nanocomb structures on nanoporous alumina templates

    International Nuclear Information System (INIS)

    Kaya, Savas; Atar, Erdem

    2011-01-01

    Electrochemical growth of metallic nanocomb structures on anodized alumina templates is described. Nanocombs originate from the orderly growth and merger of very thin (d=15±5 nm) metallic nanowires which do not completely fill much larger pores (d∼100 nm) in the alumina template (t≤3 μm). Instead, the nanowires prefer growing along the inner corners of the hexagonal pores, coalescing into a highly ordered structure as they emerge, resulting a metallic form reminiscent of the topology of the original template. We disclose here the typical processing conditions and the microstructure of this previously unknown material as observed with a scanning electron microscope (SEM) and energy dispersive x-ray (EDX) spectroscopy. It is shown that Au nanocombs have an anomalous EDX spectra and can emit electrons at a field of ∼1 kV/cm.

  8. Coupling structure in LED System-In-Package design: a physical responses-based critical parameter sheet like approach

    NARCIS (Netherlands)

    Borst, de E.C.M.; Gielen, A.W.J.; Etman, L.F.P.

    2012-01-01

    Abstract This paper introduces an approach to study the coupling structure between the design parameters and design objectives of a LED system-in-package (SiP) design concept [1]. The LED SiP is an integrated device that combines the LED chip with driver chips and potential other components in a

  9. Coupling structure in LED System-in-Package design: a physical responses-based critical parameter sheet like approach

    NARCIS (Netherlands)

    Borst, E.C.M. de; Gielen, A.W.J.; Etman, L.F.P.

    2012-01-01

    This paper introduces an approach to study the coupling structure between the design parameters and design objectives of a LED system-in-package (SiP) design concept [1]. The LED SiP is an integrated device that combines the LED chip with driver chips and potential other components in a single

  10. Study on the structural, optical, and electrical properties of the yellow light-emitting diode grown on free-standing (0001) GaN substrate

    Science.gov (United States)

    Deng, Gaoqiang; Zhang, Yuantao; Yu, Ye; Yan, Long; Li, Pengchong; Han, Xu; Chen, Liang; Zhao, Degang; Du, Guotong

    2018-04-01

    In this paper, GaN-based yellow light-emitting diodes (LEDs) were homoepitaxially grown on free-standing (0001) GaN substrates by metal-organic chemical vapor deposition. X-ray diffraction (XRD), photoluminescence (PL), and electroluminescence (EL) measurements were conducted to investigate the structural, optical, and electrical properties of the yellow LED. The XRD measurement results showed that the InGaN/GaN multiple quantum wells (MQWs) in the LED structure have good periodicity because the distinct MQWs related higher order satellite peaks can be clearly observed from the profile of 2θ-ω XRD scan. The low temperature (10 K) and room temperature PL measurement results yield an internal quantum efficiency of 16% for the yellow LED. The EL spectra of the yellow LED present well Gaussian distribution with relatively low linewidth (47-55 nm), indicating the homogeneous In-content in the InGaN quantum well layers in the yellow LED structure. It is believed that this work will aid in the future development of GaN on GaN LEDs with long emission wavelength.

  11. Double-Grating Displacement Structure for Improving the Light Extraction Efficiency of LEDs

    Directory of Open Access Journals (Sweden)

    Zhibin Wang

    2012-01-01

    Full Text Available To improve the light extraction efficiency of light-emitting diodes (LEDs, grating patterns were etched on GaN and silver film surfaces. The grating-patterned surface etching enabled the establishment of an LED model with a double-grating displacement structure that is based on the surface plasmon resonance principle. A numerical simulation was conducted using the finite difference time domain method. The influence of different grating periods for GaN surface and silver film thickness on light extraction efficiency was analyzed. The light extraction efficiency of LEDs was highest when the grating period satisfied grating coupling conditions. The wavelength of the highest value was also close to the light wavelength of the medium. The plasmon resonance frequencies on both sides of the silver film were affected by silver film thickness. With increasing film thickness, plasmon resonance frequency tended toward the same value and light extraction efficiency reached its maximum. When the grating period for the GaN surface was 365 nm and the silver film thickness was 390 nm, light extraction efficiency reached a maximum of 55%.

  12. Real structure of LaGaO3 monocrystals grown by Czochralski method

    International Nuclear Information System (INIS)

    Morozov, A.N.; Morozova, O.Yu.; Ponomarev, N.M.

    1993-01-01

    A complex X-ray diffraction study of lanthanum (ortho)gallate crystal structure and structural defects in LaGaO 3 crystals grown by the Czochralski method is carried out. Coordinates of atoms in LaGaO 3 unit cell are determined. X-Ray topographic studies of oriented LaGaO 3 sublayers for high-tc superconductor film growth are optimized. The substructure of monocrystals is studied

  13. Structural and physical properties of InAlAs quantum dots grown on GaAs

    Science.gov (United States)

    Vasile, B. S.; Daly, A. Ben; Craciun, D.; Alexandrou, I.; Lazar, S.; Lemaître, A.; Maaref, M. A.; Iacomi, F.; Craciun, V.

    2018-04-01

    Quantum dots (QDs), which have particular physical properties due to the three dimensions confinement effect, could be used in many advanced optoelectronic applications. We investigated the properties of InAlAs/AlGaAs QDs grown by molecular beam epitaxy on GaAs/Al0.5Ga0.5As layers. The optical properties of QDs were studied by low-temperature photoluminescence (PL). Two bandgap transitions corresponding to the X-Sh and X-Ph energy structure were observed. The QDs structure was investigated using high-resolution X-ray diffraction (HRXRD) and high-resolution transmission electron microscopy (HRTEM). HRXRD investigations showed that the layers grew epitaxially on the substrate, with no relaxation. HRTEM investigations confirmed the epitaxial nature of the grown structures. In addition, it was revealed that the In atoms aggregated in some prismatic regions, forming areas of high In concentration, that were still in perfect registry with the substrate.

  14. LSMO-STO(110) multilayered structure grown by metalorganic aerosol deposition

    International Nuclear Information System (INIS)

    Sapoval, Oleg; Belenchuk, Alexander; Canter, Valeriu; Zasavitsky, Efim; Moshnyaga, Vasily

    2013-01-01

    La 0.67 Sr 0.33 MnO 3 -SrTiO 3 multilayered structure was grown on SrTiO 3 (110) substrates by metalorganic aerosol deposition technique. The crystal structure was examined by X-ray analysis including simulation of diffraction and reflection patterns. The magneto transport properties of superlattice are presented. The critical thickness of (110)-oriented LSMO layers is lower than 7 perovskite unite cells. The oxygen stoichiometry provided due to high gas pressure conditions is responsible for reducing of critical thickness of LSMO layers at LSMO-STO(110) interfaces. (authors)

  15. Auger electron spectroscopy analysis of high metal content micro-structures grown by electron beam induced deposition

    International Nuclear Information System (INIS)

    Cicoira, F.; Hoffmann, P.; Olsson, C.O.A.; Xanthopoulos, N.; Mathieu, H.J.; Doppelt, P.

    2005-01-01

    An auger electron spectroscopy study was carried out on Rh-containing micro-structures grown by electron beam induced deposition (EBID) of the iso-structural and iso-electronic precursors [RhCl(PF 3 ) 2 ] 2 and [RhCl(CO) 2 ] 2 . A material containing between 55 and 60 at.% Rh was obtained from both precursors. The chemical composition of structures grown from the two different precursors indicates a similar decomposition mechanism. Deposits grown from [RhCl(PF 3 ) 2 ] 2 showed a chemical composition independent of electron energy and electron dose in the investigated range of conditions

  16. Molecular Dynamic Simulation of Space and Earth-Grown Crystal Structures of Thermostable T1 Lipase Geobacillus zalihae Revealed a Better Structure.

    Science.gov (United States)

    Ishak, Siti Nor Hasmah; Aris, Sayangku Nor Ariati Mohamad; Halim, Khairul Bariyyah Abd; Ali, Mohd Shukuri Mohamad; Leow, Thean Chor; Kamarudin, Nor Hafizah Ahmad; Masomian, Malihe; Rahman, Raja Noor Zaliha Raja Abd

    2017-09-25

    Less sedimentation and convection in a microgravity environment has become a well-suited condition for growing high quality protein crystals. Thermostable T1 lipase derived from bacterium Geobacillus zalihae has been crystallized using the counter diffusion method under space and earth conditions. Preliminary study using YASARA molecular modeling structure program for both structures showed differences in number of hydrogen bond, ionic interaction, and conformation. The space-grown crystal structure contains more hydrogen bonds as compared with the earth-grown crystal structure. A molecular dynamics simulation study was used to provide insight on the fluctuations and conformational changes of both T1 lipase structures. The analysis of root mean square deviation (RMSD), radius of gyration, and root mean square fluctuation (RMSF) showed that space-grown structure is more stable than the earth-grown structure. Space-structure also showed more hydrogen bonds and ion interactions compared to the earth-grown structure. Further analysis also revealed that the space-grown structure has long-lived interactions, hence it is considered as the more stable structure. This study provides the conformational dynamics of T1 lipase crystal structure grown in space and earth condition.

  17. Electronic structure analysis of GaN films grown on r- and a-plane sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Mishra, Monu; Krishna TC, Shibin; Aggarwal, Neha [Physics of Energy Harvesting Division, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-NPL Campus, Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Vihari, Saket [Physics of Energy Harvesting Division, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Gupta, Govind, E-mail: govind@nplindia.org [Physics of Energy Harvesting Division, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-NPL Campus, Dr. K.S. Krishnan Marg, New Delhi 110012 (India)

    2015-10-05

    Graphical abstract: Substrate orientation induced changes in surface chemistry, band bending, hybridization states, electronic properties and surface morphology of epitaxially grown GaN were investigated via photoemission spectroscopic and Atomic Force Microscopic measurements. - Highlights: • Electronic structure and surface properties of GaN film grown on r/a-plane sapphire. • Downward band bending (0.5 eV) and high surface oxide is observed for GaN/a-sapphire. • Electron affinity and ionization energy is found to be higher for GaN/a-sapphire. - Abstract: The electronic structure and surface properties of epitaxial GaN films grown on r- and a-plane sapphire substrates were probed via spectroscopic and microscopic measurements. X-ray photoemission spectroscopic (XPS) measurements were performed to analyse the surface chemistry, band bending and valence band hybridization states. It was observed that GaN/a-sapphire display a downward band bending of 0.5 eV and possess higher amount of surface oxide compared to GaN/r-sapphire. The valence band (VB) investigation revealed that the hybridization corresponds to the interactions of Ga 4s and Ga 4p orbitals with N 2p orbital, and result in N2p–Ga4p, N2p–Ga4s{sup ∗}, mixed and N2p–Ga4s states. The energy band structure and electronic properties were measured via ultraviolet photoemission spectroscopic (UPS) experiments. The band structure analysis and electronic properties calculations divulged that the electron affinity and ionization energy of GaN/a-sapphire were 0.3 eV higher than GaN/r-sapphire film. Atomic Force Microscopic (AFM) measurements revealed faceted morphology of GaN/r-sapphire while a smooth pitted surface was observed for GaN/a-sapphire film, which is closely related to surface oxide coverage.

  18. Structural evolution of dilute magnetic (Sn,Mn)Se films grown by molecular beam epitaxy

    Science.gov (United States)

    Kanzyuba, Vasily; Dong, Sining; Liu, Xinyu; Li, Xiang; Rouvimov, Sergei; Okuno, Hanako; Mariette, Henri; Zhang, Xueqiang; Ptasinska, Sylwia; Tracy, Brian D.; Smith, David J.; Dobrowolska, Margaret; Furdyna, Jacek K.

    2017-02-01

    We describe the structural evolution of dilute magnetic (Sn,Mn)Se films grown by molecular beam epitaxy on GaAs (111) substrates, as revealed by transmission electron microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy. When the Mn concentration is increased, the lattice of the ternary (Sn,Mn)Se films evolves quasi-coherently from a SnSe2 two-dimensional (2D) crystal structure into a more complex quasi-2D lattice rearrangement, ultimately transforming into the magnetically concentrated antiferromagnetic MnSe 3D rock-salt structure as Mn approaches 50 at. % of this material. These structural transformations are expected to underlie the evolution of magnetic properties of this ternary system reported earlier in the literature.

  19. Structural Control of InP/ZnS Core/Shell Quantum Dots Enables High-quality White LEDs.

    Science.gov (United States)

    Ganesh Kumar, Baskaran; Sadeghi, Sadra; Melikov, Rustamzhon; Mohammadi Aria, Mohammed; Bahmani Jalali, Houman; Ow-Yang, Cleva; Nizamoglu, Sedat

    2018-05-30

    Herein, we demonstrate that the structural and optical control of InP-based quantum dots can lead to high-performance LEDs. Zinc sulphide (ZnS) shells passivate the InP quantum dot core and increase the quantum yield in green-emitting quantum dots by 13-fold and red-emitting quantum dots by 8-fold. The optimised quantum dots are integrated in the liquid-state to eliminate aggregation induced emission quenching and we fabricated white LEDs with warm, neutral, and cool white appearance by the down-conversion mechanism. The quantum dot-functionalized white LEDs achieve luminous efficiency up to 14.7 lm/W and colour-rendering index up to 80. The structural and optical control of InP/ZnS core/shell quantum dots enable 23-fold enhancement in luminous efficiency of white LEDs compared to ones containing only QDs of InP core. © 2018 IOP Publishing Ltd.

  20. Defect Structure of High-Temperature-Grown GaMnSb/GaSb

    International Nuclear Information System (INIS)

    Romanowski, P.; Bak-Misiuk, J.; Dynowska, E.; Domagala, J.Z.; Wojciechowski, T.; Jakiela, R.; Sadowski, J.; Barcz, A.; Caliebe, W.

    2010-01-01

    GaMnSb/GaSb(100) layers with embedded MnSb inclusions have been grown at 720 K using MBE technique. This paper presents the investigation of the defect structure of Ga1-xMnxSb layers with different content of manganese (up to x = 0.07). X-ray diffraction method using conventional and synchrotron radiation was applied. Dimensions and shapes of inclusions were detected by scanning electron microscopy. Depth profiles of elements were measured using secondary ion mass spectroscopy technique. (authors)

  1. Electrochromism and photocatalysis in dendrite structured Ti:WO3 thin films grown by sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Karuppasamy, A., E-mail: karuppasamy@psnacet.edu.in

    2015-12-30

    Graphical abstract: - Highlights: • Dendrite structured Ti doped WO{sub 3} (WTO) thin films are grown by co-sputtering. • Sputtering condition influences structure and surface morphology of WTO films. • Titanium doping and annealing lead to dendritic surface structures in WTO films. • Structural, optical, electrochromic and photocatalytic properties of WTO films. • Enhanced electrochromism and photocatalysis in dendrite structured WTO thin films. - Abstract: Titanium doped tungsten oxide (Ti:WO{sub 3}) thin films with dendrite surface structures were grown by co-sputtering titanium and tungsten in Ar + O{sub 2} atmosphere. Ti:WO{sub 3} thin films were deposited at oxygen flow rates corresponding to pressures in the range 1.0 × 10{sup −3}–5.0 × 10{sup −3} mbar. Argon flow rate and sputtering power densities for titanium (2 W/cm{sup 2}) and tungsten (3 W/cm{sup 2}) were kept constant. Ti:WO{sub 3} films deposited at an oxygen pressure of 5 × 10{sup −3} mbar are found to be better electrochromic and photocatalytic. They have high optical modulation (80% at λ = 550 nm), coloration efficiency (60 cm{sup 2}/C at λ = 550 nm), electron/ion storage and removal capacity (Qc: −22.01 mC/cm{sup 2}, Qa: 17.72 mC/cm{sup 2}), reversibility (80%) and methylene blue decomposition rate (−1.38 μmol/l d). The combined effects of titanium doping, dendrite surface structures and porosity leads to significant enhancement in the electrochromic and photocatalytic properties of Ti:WO{sub 3} films.

  2. Electrochromism and photocatalysis in dendrite structured Ti:WO3 thin films grown by sputtering

    International Nuclear Information System (INIS)

    Karuppasamy, A.

    2015-01-01

    Graphical abstract: - Highlights: • Dendrite structured Ti doped WO 3 (WTO) thin films are grown by co-sputtering. • Sputtering condition influences structure and surface morphology of WTO films. • Titanium doping and annealing lead to dendritic surface structures in WTO films. • Structural, optical, electrochromic and photocatalytic properties of WTO films. • Enhanced electrochromism and photocatalysis in dendrite structured WTO thin films. - Abstract: Titanium doped tungsten oxide (Ti:WO 3 ) thin films with dendrite surface structures were grown by co-sputtering titanium and tungsten in Ar + O 2 atmosphere. Ti:WO 3 thin films were deposited at oxygen flow rates corresponding to pressures in the range 1.0 × 10 −3 –5.0 × 10 −3 mbar. Argon flow rate and sputtering power densities for titanium (2 W/cm 2 ) and tungsten (3 W/cm 2 ) were kept constant. Ti:WO 3 films deposited at an oxygen pressure of 5 × 10 −3 mbar are found to be better electrochromic and photocatalytic. They have high optical modulation (80% at λ = 550 nm), coloration efficiency (60 cm 2 /C at λ = 550 nm), electron/ion storage and removal capacity (Qc: −22.01 mC/cm 2 , Qa: 17.72 mC/cm 2 ), reversibility (80%) and methylene blue decomposition rate (−1.38 μmol/l d). The combined effects of titanium doping, dendrite surface structures and porosity leads to significant enhancement in the electrochromic and photocatalytic properties of Ti:WO 3 films.

  3. Morphology and Structural Characterization of Carbon Nanowalls Grown via VHF-PECVD

    Science.gov (United States)

    Akmal Hasanudin, M.; Wahab, Y.; Ismail, A. K.; Zahid Jamal, Z. A.

    2018-03-01

    A 150 MHz very high frequency plasma enhanced chemical vapor deposition (150 MHz VHF-PECVD) system was utilized to fabricate two-dimensional carbon nanostructure from the mixture of methane and hydrogen. Morphology and structural properties of the grown nanostructure were investigated by FESEM imaging and Raman spectroscopy. Carbon nanowalls (CNW) with dense and wavy-like structure were successfully synthesized. The wavy-like morphology of CNW was found to be more distinct during growth at small electrode spacing and denser with increasing deposition time due to better flux of hydrocarbon radicals to the substrate and higher rate of reaction, respectively. Typical characteristics of CNW were observed from strong D band, narrow bandwidth of G band and single broad peak of 2D band of Raman spectra indicating the presence of disordered nanocrystalline graphite structure with high degree of graphitization.

  4. Structural, morphological and electronic properties of pulsed laser grown Eu2O3 thin films

    Science.gov (United States)

    Kumar, Sandeep; Prakash, Ram; Choudhary, R. J.; Phase, D. M.

    2018-05-01

    Herein, we report the growth, structural, morphological and electronic properties of Europium sesquioxide (Eu2O3) thin films on Si [1 0 0] substrate using pulsed laser deposition technique. The films were deposited at ˜750 °C substrate temperature while the oxygen partial pressure (OPP) was varied (vacuum,˜1 mTorr, ˜10 mTorr and ˜300 mTorr). X-ray diffraction results confirm the single phase cubic structure of the film grown at ˜300 mTorr. The XRD results are also supported by the Raman's spectroscopy results. Eu-3d XPS core level spectra confirms the dominant contributions from the "3+" states of Eu in the film.

  5. Surface and interfacial structural characterization of MBE grown Si/Ge multilayers

    International Nuclear Information System (INIS)

    Saha, Biswajit; Sharma, Manjula; Sarma, Abhisakh; Rath, Ashutosh; Satyam, P.V.; Chakraborty, Purushottam; Sanyal, Milan K.

    2009-01-01

    Si/Ge multilayer structures have been grown by solid source molecular beam epitaxy (MBE) on Si (1 1 1) and (1 0 0) substrates and were characterized by high-resolution X-ray diffraction (XRD), atomic force microscopy (AFM), high-depth-resolution secondary ion mass spectroscopy (SIMS) and cross-section high-resolution transmission electron microscopy (HRTEM). A reasonably good agreement has been obtained for layer thickness, interfacial structure and diffusion between SIMS and HRTEM measurements. Epitaxial growth and crystalline nature of the individual layer have been probed using cross-sectional HRTEM and XRD measurements. Surface and interface morphological studies by AFM and HRTEM show island-like growth of both Si and Ge nanostructures.

  6. Structural properties and gas sensing behavior of sol-gel grown nanostructured zinc oxide

    Energy Technology Data Exchange (ETDEWEB)

    Rajyaguru, Bhargav; Gadani, Keval; Kansara, S. B.; Pandya, D. D.; Shah, N. A.; Solanki, P. S., E-mail: piyush.physics@gmail.com [Department of Physics, Saurashtra University, Rajkot – 360 005 (India); Rathod, K. N.; Solanki, Sapana [Department of Physics, Saurashtra University, Rajkot – 360 005 (India); V.V.P. Engineering College, Gujarat Technological University, Rajkot – 360 005 (India)

    2016-05-06

    In this communication, we report the results of the studies on structural properties and gas sensing behavior of nanostructured ZnO grown using acetone precursor based modified sol-gel technique. Final product of ZnO was sintered at different temperatures to vary the crystallite size while their structural properties have been studied using X-ray diffraction (XRD) measurement performed at room temperature. XRD results suggest the single phasic nature of all the samples and crystallite size increases from 11.53 to 20.96 nm with increase in sintering temperature. Gas sensing behavior has been studied for acetone gas which indicates that lower sintered samples are more capable to sense the acetone gas and related mechanism has been discussed in the light of crystallite size, crystal boundary density, defect mechanism and possible chemical reaction between gas traces and various oxygen species.

  7. Light output improvement of GaN-based light-emitting diodes grown on Si (111) by a via-thin-film structure

    Science.gov (United States)

    Li, Zengcheng; Feng, Bo; Deng, Biao; Liu, Legong; Huang, Yingnan; Feng, Meixin; Zhou, Yu; Zhao, Hanmin; Sun, Qian; Wang, Huaibing; Yang, Xiaoli; Yang, Hui

    2018-04-01

    This work reports the fabrication of via-thin-film light-emitting diode (via-TF-LED) to improve the light output power (LOP) of blue/white GaN-based LEDs grown on Si (111) substrates. The as-fabricated via-TF-LEDs were featured with a roughened n-GaN surface and the p-GaN surface bonded to a wafer carrier with a silver-based reflective electrode, together with an array of embedded n-type via pillar metal contact from the p-GaN surface etched through the multiple-quantum-wells (MQWs) into the n-GaN layer. When operated at 350 mA, the via-TF-LED gave an enhanced blue LOP by 7.8% and over 3.5 times as compared to the vertical thin-film LED (TF-LED) and the conventional lateral structure LED (LS-LED). After covering with yellow phosphor that converts some blue photons into yellow light, the via-TF-LED emitted an enhanced white luminous flux by 13.5% and over 5 times, as compared with the white TF-LED and the white LS-LED, respectively. The significant LOP improvement of the via-TF-LED was attributed to the elimination of light absorption by the Si (111) epitaxial substrate and the finger-like n-electrodes on the roughened emitting surface. Project supported by the National Key R&D Program (Nos. 2016YFB0400100, 2016YFB0400104), the National Natural Science Foundation of China (Nos. 61534007, 61404156, 61522407, 61604168, 61775230), the Key Frontier Scientific Research Program of the Chinese Academy of Sciences (No. QYZDB-SSW-JSC014), the Science and Technology Service Network Initiative of the Chinese Academy of Sciences, the Key R&D Program of Jiangsu Province (No. BE2017079), the Natural Science Foundation of Jiangsu Province (No. BK20160401), and the China Postdoctoral Science Foundation (No. 2016M591944). This work was also supported by the Open Fund of the State Key Laboratory of Luminescence and Applications (No. SKLA-2016-01), the Open Fund of the State Key Laboratory on Integrated Optoelectronics (Nos. IOSKL2016KF04, IOSKL2016KF07), and the Seed Fund from SINANO

  8. Effects of underlying InGaN/GaN superlattice structures on the structural and optical properties of InGaN LEDs

    Energy Technology Data Exchange (ETDEWEB)

    Tsai, Chia-Lung, E-mail: cltsai@mail.cgu.edu.tw

    2016-06-15

    This study proposes the use of InGaN/GaN superlattices grown beneath InGaN multiple quantum wells (MQWs) and designed with different well widths to act as an electron emitter layer (EEL). Cross-sectional transmission electron microscopy reveals strong indium segregation in the underlying superlattices with a 5-nm-thick In{sub 0.1}Ga{sub 0.9}N well, thus corrupting the crystalline perfection of the resulting LEDs, and also increasing their leakage current. It was also found that the depth of the localized states increases with the well width of the underlying superlattices. In the proposed LEDs, variation in the biaxial strains of the superlattice EELs with different well widths results in an increase in indium incorporation of InGaN MQWs, thus obtaining a redshifted photoluminescence emission with respect to that of normal LED. Furthermore, the presence of relatively strong carrier localization and the alleviation of electron leakage from the InGaN MQWs results in improved light output performance from the proposed LEDs grown with a narrow In{sub 0.1}Ga{sub 0.9}N well in the underlying superlattices. Although growth in a wide In{sub 0.1}Ga{sub 0.9}N well (~3.5 nm) containing underlying superlattices suffers from poor crystalline quality due to partial strain relaxation, it resulted in improved roll-off behavior in terms of light intensity. This may be due to the improved hot electron cooling capacity mitigating the extent of carrier leakage. - Highlights: • In{sub 0.1}Ga{sub 0.9}N/GaN superlattices are used as an electron emitter layer. • Improved LED performance can be achieved using a narrow In{sub 0.1}Ga{sub 0.9}N well. • A wider well can further reduce carrier leakage despite poor quality is presented.

  9. Zinc deficiency in field-grown pecan trees: changes in leaf nutrient concentrations and structure.

    Science.gov (United States)

    Ojeda-Barrios, Dámaris; Abadía, Javier; Lombardini, Leonardo; Abadía, Anunciación; Vázquez, Saúl

    2012-06-01

    Zinc (Zn) deficiency is a typical nutritional disorder in pecan trees [Carya illinoinensis (Wangenh.) C. Koch] grown under field conditions in calcareous soils in North America, including northern Mexico and south-western United States. The aim of this study was to assess the morphological and nutritional changes in pecan leaves affected by Zn deficiency as well as the Zn distribution within leaves. Zinc deficiency led to decreases in leaf chlorophyll concentrations, leaf area and trunk cross-sectional area. Zinc deficiency increased significantly the leaf concentrations of K and Ca, and decreased the leaf concentrations of Zn, Fe, Mn and Cu. All nutrient values found in Zn-deficient leaves were within the sufficiency ranges, with the only exception of Zn, which was approximately 44, 11 and 9 µg g(-1) dry weight in Zn-sufficient, moderately and markedly Zn-deficient leaves, respectively. Zinc deficiency led to decreases in leaf thickness, mainly due to a reduction in the thickness of the palisade parenchyma, as well as to increases in stomatal density and size. The localisation of Zn was determined using the fluorophore Zinpyr-1 and ratio-imaging technique. Zinc was mainly localised in the palisade mesophyll area in Zn-sufficient leaves, whereas no signal could be obtained in Zn-deficient leaves. The effects of Zn deficiency on the leaf characteristics of pecan trees include not only decreases in leaf chlorophyll and Zn concentrations, but also a reduction in the thickness of the palisade parenchyma, an increase in stomatal density and pore size and the practical disappearance of Zn leaf pools. These characteristics must be taken into account to design strategies to correct Zn deficiency in pecan tree in the field. Copyright © 2012 Society of Chemical Industry.

  10. Morphology evolution of hydrothermally grown ZnO nanostructures on gallium doping and their defect structures

    Energy Technology Data Exchange (ETDEWEB)

    Pineda-Hernandez, G. [Facultad de Ingenieria Quimica, Benemerita Universidad Autonoma de Puebla, C.P. 72570 Puebla, Pue. (Mexico); Escobedo-Morales, A., E-mail: alejandroescobedo@hotmail.com [Facultad de Ingenieria Quimica, Benemerita Universidad Autonoma de Puebla, C.P. 72570 Puebla, Pue. (Mexico); Pal, U. [Instituto de Fisica, Benemerita Universidad Autonoma de Puebla, Apdo. Postal J-48, C.P. 72570 Puebla, Pue. (Mexico); Chigo-Anota, E. [Facultad de Ingenieria Quimica, Benemerita Universidad Autonoma de Puebla, C.P. 72570 Puebla, Pue. (Mexico)

    2012-08-15

    In the present article, the effect of gallium doping on the morphology, structural, and vibrational properties of hydrothermally grown ZnO nanostructures has been studied. It has been observed that incorporated gallium plays an important role on the growth kinetics and hence on the morphology evolution of the ZnO crystals. Ga doping in high concentration results in the contraction of ZnO unit cell, mainly along c-axis. Although Ga has high solubility in ZnO, heavy doping promotes the segregation of Ga atoms as a secondary phase. Incorporated Ga atoms strongly affect the vibrational characteristics of ZnO lattice and induce anomalous Raman modes. Possible mechanisms of morphology evolution and origin of anomalous Raman modes in Ga doped ZnO nanostructures are discussed. -- Highlights: Black-Right-Pointing-Pointer Ga doped ZnO nanostructures were successfully grown by hydrothermal chemical route. Black-Right-Pointing-Pointer Ga doping has strong effect on the resulting morphology of ZnO nanostructures. Black-Right-Pointing-Pointer Anomalous vibrational modes in wurtzite ZnO lattice are induced by Ga doping. Black-Right-Pointing-Pointer Incorporated Ga atoms accommodate at preferential lattice sites.

  11. The Crystal structure of InAs nanorods grown onto Si[111] substrate

    Energy Technology Data Exchange (ETDEWEB)

    Davydok, Anton; Biermanns, Andreas; Pietsch, Ullrich [Festkoerperphysik, Universitaet Siegen, Walter-Flex-Str. 3,57072, Siegen (Germany); Breuer, Steffen; Dimakis, Manos; Geelhaar, Lutz [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

    2011-07-01

    Nanowires are of particular interest due to the ability to synthesize heterostructures in the nanometer range. It was found that nearly any AIIIBV semiconductor material can be grown as NWs onto another AIIIBV or group IV [111] substrate independent from lattice mismatch. We presented an X-ray characterization of InAs NRs on Si [111] grown by assist free MBE method. Lattice mismatch of this materials is 11%. For study of strain realizing we concentrated our research on initial stages of growth process investigating samples set with different growth time. Using synchrotron radiation we have performed experiments in symmetrical and asymmetrical out-of plane scattering geometry and grazing-incidence diffraction. Combining the results we were able to characterize the transition between silicon silicon substrate and InAs NWs. We find in-plane lattice mismatch of -0.18% close to the interface compared to InAs bulk material. With help of micro-focus setup we are able measure structural parameters of single NWs to determine the strain accomodation as function of NW size. In particular using asymmetric wurzite-sensitive reflections under coherent beam illumination we could quantify the number of stacking faults. In the talk we present details of the analysis and first simulation results.

  12. Chemical and structural properties of polymorphous silicon thin films grown from dichlorosilane

    Energy Technology Data Exchange (ETDEWEB)

    Álvarez-Macías, C.; Monroy, B.M.; Huerta, L.; Canseco-Martínez, M.A. [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, A.P. 70-360, Coyoacán, C.P. 04510 México, D.F. (Mexico); Picquart, M. [Departamento de Física, Universidad Autónoma Metropolitana, Iztapalapa, A.P. 55-534, 09340 México, D.F. (Mexico); Santoyo-Salazar, J. [Departamento de Física, CINVESTAV-IPN, A.P. 14-740, C.P. 07000 México, D.F. (Mexico); Sánchez, M.F. García [Unidad Profesional Interdisciplinaria en Ingeniería y Tecnologías Avanzadas, Instituto Politécnico Nacional, Av. I.P.N. 2580, Gustavo A. Madero, 07340 México .D.F. (Mexico); Santana, G., E-mail: gsantana@iim.unam.mx [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, A.P. 70-360, Coyoacán, C.P. 04510 México, D.F. (Mexico)

    2013-11-15

    We have examined the effects of hydrogen dilution (R{sub H}) and deposition pressure on the morphological, structural and chemical properties of polymorphous silicon thin films (pm-Si:H), using dichlorosilane as silicon precursor in the plasma enhanced chemical vapor deposition (PECVD) process. The use of silicon chlorinated precursors enhances the crystallization process in as grown pm-Si:H samples, obtaining crystalline fractions from Raman spectra in the range of 65–95%. Atomic Force Microscopy results show the morphological differences obtained when the chlorine chemistry dominates the growth process and when the plasma–surface interactions become more prominent. Augmenting R{sub H} causes a considerable reduction in both roughness and topography, demonstrating an enhancement of ion bombardment and attack of the growing surface. X-ray Photoelectron Spectroscopy results show that, after ambient exposure, there is low concentration of oxygen inside the films grown at low R{sub H}, present in the form of Si-O, which can be considered as structural defects. Instead, oxidation increases with deposition pressure and dilution, along with film porosity, generating a secondary SiO{sub x} phase. For higher pressure and dilution, the amount of chlorine incorporated to the film decreases congruently with HCl chlorine extraction processes involving atomic hydrogen interactions with the surface. In all cases, weak silicon hydride (Si-H) bonds were not detected by infrared spectroscopy, while bonding configurations associated to the silicon nanocrystal surface were clearly observed. Since these films are generally used in photovoltaic devices, analyzing their chemical and structural properties such as oxygen incorporation to the films, along with chlorine and hydrogen, is fundamental in order to understand and optimize their electrical and optical properties.

  13. Morphology and oxide shell structure of iron nanoparticles grown by sputter-gas-aggregation

    International Nuclear Information System (INIS)

    Wang, C M; Baer, D R; Amonette, J E; Engelhard, M H; Qiang, Y; Antony, J

    2007-01-01

    The crystal faceting planes and oxide coating structures of core-shell structured iron/iron-oxide nanoparticles synthesized by a sputter-gas-aggregation process were studied using transmission electron microscopy (TEM), electron diffraction and Wulff shape construction. The particles grown by this process and deposited on a support in a room temperature process have been compared with particles grown and deposited at high temperature as reported in the literature. It has been found that the Fe nanoparticles formed at RT are invariantly faceted on the {100} lattice planes and truncated by the {110} planes at different degrees. A substantial fraction of particles are confined only by the 6{100} planes (not truncated by the {110} planes); this contrasts with the Fe particles formed at high temperature (HT) for which a predominance of {110} planes has been reported. Furthermore, at RT no particle was identified to be only confined by the 12{110} planes, which is relatively common for the particles formed at HT. The Fe cubes defined by the 6{100} planes show a characteristic inward relaxation along the and directions and the reason for this behaviour is not fully understood. The oxide shell on the Fe{100} plane maintains an orientation relationship: Fe(001) parallel Fe 3 O 4 (001) and Fe[100] parallel Fe 3 O 4 [110], which is the same as the oxide formed on a bulk Fe(001) through thermal oxidation. Orientation of the oxide that forms on the Fe{110} facets differs from that on Fe{001}: therefore, properties of core-shell structured Fe nanoparticle faceted primarily with one type of lattice plane may be fully different from that faceted with another type of lattice plane

  14. Optical and structural properties of MOVPE-grown GaInSb/GaSb quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Wagener, Viera, E-mail: viera.wagener@nmmu.ac.z [Physics Department, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Olivier, E.J.; Botha, J.R. [Physics Department, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa)

    2009-12-15

    This paper reports on the optical and structural properties of strained type-I Ga{sub 1-x}In{sub x}Sb quantum wells embedded in GaSb from a metal-organic vapour phase epitaxial growth perspective. Photoluminescence measurements and transmission electron microscopy were used to evaluate the effect of the growth temperature on the quality of Ga{sub 1-x}In{sub x}Sb strained layers with varied alloy compositions and thicknesses. Although the various factors contributing to the overall quality of the strained layers are difficult to separate, the quantum well characteristics are significantly altered by the growth temperature. Despite the high growth rates (approx2 nm/s), quantum wells grown at 607 deg. C display photoluminescence emissions with full-width at half-maximum of 3.5-5.0 meV for an indium solid content (x) up to 0.15.

  15. Optical and structural characterisation of epitaxial nanoporous GaN grown by CVD.

    Science.gov (United States)

    Mena, Josué; Carvajal, Joan J; Martínez, Oscar; Jiménez, Juan; Zubialevich, Vitaly Z; Parbrook, Peter J; Diaz, Francesc; Aguiló, Magdalena

    2017-09-15

    In this paper we study the optical properties of nanoporous gallium nitride (GaN) epitaxial layers grown by chemical vapour deposition on non-porous GaN substrates, using photoluminescence, cathodoluminescence, and resonant Raman scattering, and correlate them with the structural characteristic of these films. We pay special attention to the analysis of the residual strain of the layers and the influence of the porosity in the light extraction. The nanoporous GaN epitaxial layers are under tensile strain, although the strain is progressively reduced as the deposition time and the thickness of the porous layer increases, becoming nearly strain free for a thickness of 1.7 μm. The analysis of the experimental data point to the existence of vacancy complexes as the main source of the tensile strain.

  16. Optical and structural properties of MOVPE-grown GaInSb/GaSb quantum wells

    International Nuclear Information System (INIS)

    Wagener, Viera; Olivier, E.J.; Botha, J.R.

    2009-01-01

    This paper reports on the optical and structural properties of strained type-I Ga 1-x In x Sb quantum wells embedded in GaSb from a metal-organic vapour phase epitaxial growth perspective. Photoluminescence measurements and transmission electron microscopy were used to evaluate the effect of the growth temperature on the quality of Ga 1-x In x Sb strained layers with varied alloy compositions and thicknesses. Although the various factors contributing to the overall quality of the strained layers are difficult to separate, the quantum well characteristics are significantly altered by the growth temperature. Despite the high growth rates (∼2 nm/s), quantum wells grown at 607 deg. C display photoluminescence emissions with full-width at half-maximum of 3.5-5.0 meV for an indium solid content (x) up to 0.15.

  17. Magnetic and structural properties of Co2FeAl thin films grown on Si substrate

    International Nuclear Information System (INIS)

    Belmeguenai, Mohamed; Tuzcuoglu, Hanife; Gabor, Mihai; Petrisor, Traian; Tiusan, Coriolan; Berling, Dominique; Zighem, Fatih; Mourad Chérif, Salim

    2015-01-01

    The correlation between magnetic and structural properties of Co 2 FeAl (CFA) thin films of different thicknesses (10 nmgrown at room temperature on MgO-buffered Si/SiO 2 substrates and annealed at 600 °C has been studied. x-ray diffraction (XRD) measurements revealed an (011) out-of-plane textured growth of the films. The deduced lattice parameter increases with the film thickness. Moreover, pole figures showed no in-plane preferential growth orientation. The magneto-optical Kerr effect hysteresis loops showed the presence of a weak in-plane uniaxial anisotropy with a random easy axis direction. The coercive field, measured with the applied field along the easy axis direction, and the uniaxial anisotropy field increase linearly with the inverse of the CFA thickness. The microstrip line ferromagnetic resonance measurements for in-plane and perpendicular applied magnetic fields revealed that the effective magnetization and the uniaxial in-plane anisotropy field follow a linear variation versus the inverse CFA thickness. This allows deriving a perpendicular surface anisotropy coefficient of −1.86 erg/cm 2 . - Highlights: • Various Co 2 FeAl thin films were grown on a Si(001) substrates and annealed at 600 °C. • The thickness dependence of magnetic and structural properties has been studied. • X-ray measurements revealed an (011) out-of-plane textured growth of the films. • The easy axis coercive field varies linearly with the inverse CFA thickness. • The effective magnetization increases linearly with the inverse film thickness

  18. Confronting structural violence in sex work: lessons from a community-led HIV prevention project in Mysore, India.

    Science.gov (United States)

    Argento, Elena; Reza-Paul, Sushena; Lorway, Robert; Jain, Jinendra; Bhagya, M; Fathima, Mary; Sreeram, S V; Hafeezur, Rahman Syed; O'Neil, John

    2011-01-01

    Evidence from community-led HIV prevention projects suggests that structural interventions may result in reduced rates of HIV and STIs. The complex relationship between empowerment and confronting stigma, discrimination and physical abuse necessitates further investigation into the impact that such interventions have on the personal risks for sex workers. This article aims to describe lived experiences of members from a sex worker's collective in Mysore, India and how they have confronted structural violence. The narratives highlight experiences of violence and the development and implementation of strategies that have altered the social, physical, and emotional environment for sex workers. Building an enabling environment was key to reducing personal risks inherent to sex work, emphasizing the importance of community-led structural interventions for sex workers in India.

  19. Electronic excitation induced structural and optical modifications in InGaN/GaN quantum well structures grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Prabakaran, K.; Ramesh, R.; Jayasakthi, M.; Surender, S.; Pradeep, S. [Crystal Growth Centre, Anna University, Chennai (India); Balaji, M. [National Centre for Nanoscience and Nanotechnology, University of Madras, Guindy Campus, Chennai (India); Asokan, K. [Inter-University Accelerator Centre, New Delhi (India); Baskar, K., E-mail: drbaskar2009@gmail.com [Crystal Growth Centre, Anna University, Chennai (India); Manonmaniam Sundaranar University, Tirunelveli (India)

    2017-03-01

    Highlights: • Effects on InGaN/GaN QW structures by Au{sup 7+} (100 MeV) ion have been investigated. • Structural defects of the irradiated InGaN/GaN QW structures are determined. • The intermixing effect in irradiated InGaN/GaN QW structures were understood. • Modified luminescence was observed in the PL spectra due to heavy ion irradiation. • Surface modification was observed due to the heavy ion irradiation. - Abstract: The present study focuses on the electronic excitation induced structural and optical properties of InGaN/GaN quantum well (QW) structures grown by metal organic chemical vapor deposition technique. These excitations were produced using Au{sup 7+} ion irradiation with 100 MeV energy. The X-ray rocking curves intensity and full width at half-maximum values corresponding to the planes of (0 0 0 2) and (1 0 −1 5) of the irradiated QW structures show the modifications in the screw and edge-type dislocation densities vary with the ion fluences. The structural characteristics using the reciprocal space mapping indicate the intermixing effects in InGaN/GaN QW structures. Atomic force microscopy images confirmed the presence of nanostructures and the surface modification due to heavy ion irradiation. The irradiated QW structures exhibited degraded photoluminescence intensity and a subsequent decrease in the yellow luminescence band intensity with the fluences of 1 × 10{sup 11} and 5 × 10{sup 12} ions/cm{sup 2} compared to the pristine QW structures.

  20. Structural and optical inhomogeneities of Fe doped GaN grown by hydride vapor phase epitaxy

    Science.gov (United States)

    Malguth, E.; Hoffmann, A.; Phillips, M. R.

    2008-12-01

    We present the results of cathodoluminescence experiments on a set of Fe doped GaN samples with Fe concentrations of 5×1017, 1×1018, 1×1019, and 2×1020 cm-3. These specimens were grown by hydride vapor phase epitaxy with different concentrations of Fe. The introduction of Fe is found to promote the formation of structurally inhomogeneous regions of increased donor concentration. We detect a tendency of these regions to form hexagonal pits at the surface. The locally increased carrier concentration leads to enhanced emission from the band edge and the internal T41(G)-A61(S) transition of Fe3+. In these areas, the luminescence forms a finely structured highly symmetric pattern, which is attributed to defect migration along strain-field lines. Fe doping is found to quench the yellow defect luminescence band and to enhance the blue luminescence band due to the lowering of the Fermi level and the formation of point defects, respectively.

  1. Electronic structures of GeSi nanoislands grown on pit-patterned Si(001 substrate

    Directory of Open Access Journals (Sweden)

    Han Ye

    2014-11-01

    Full Text Available Patterning pit on Si(001 substrate prior to Ge deposition is an important approach to achieve GeSi nanoislands with high ordering and size uniformity. In present work, the electronic structures of realistic uncapped pyramid, dome, barn and cupola nanoislands grown in {105} pits are systematically investigated by solving Schrödinger equation for heavy-hole, which resorts to inhomogeneous strain distribution and nonlinear composition-dependent band parameters. Uniform, partitioned and equilibrium composition profile (CP in nanoisland and inverted pyramid structure are simulated separately. We demonstrate the huge impact of composition profile on localization of heavy-hole: wave function of ground state is confined near pit facets for uniform CP, at bottom of nanoisland for partitioned CP and at top of nanoisland for equilibrium CP. Moreover, such localization is gradually compromised by the size effect as pit filling ratio or pit size decreases. The results pave the fundamental guideline of designing nanoislands on pit-patterned substrates for desired applications.

  2. Structural characterization of Fe−Pd nanowires grown by electrodeposition using an acid electrolyte

    Energy Technology Data Exchange (ETDEWEB)

    Domenichini, P. [Instituto Balseiro, Universidad Nacional de Cuyo, Av. Bustillo 9500, 8400 San Carlos de Bariloche (Argentina); Condó, A.M. [Instituto Balseiro, Universidad Nacional de Cuyo, Av. Bustillo 9500, 8400 San Carlos de Bariloche (Argentina); Centro Atómico Bariloche, Comisión Nacional de Energía Atómica, Av. Bustillo 9500, 8400 San Carlos de Bariloche (Argentina); Haberkorn, N., E-mail: nhaberk@cab.cnea.gov.ar [Instituto Balseiro, Universidad Nacional de Cuyo, Av. Bustillo 9500, 8400 San Carlos de Bariloche (Argentina); Centro Atómico Bariloche, Comisión Nacional de Energía Atómica, Av. Bustillo 9500, 8400 San Carlos de Bariloche (Argentina)

    2016-07-01

    Fe{sub 70}Pd{sub 30} nanostructures have potential application in actuators due to their conventional and magnetic shape memory. Here, we report the microstructure of electrodeposition grown Fe−Pd nanowires in which the process was confined to polycarbonate membranes with a nominal pore diameter of 200 nm. We used an acid electrolyte (pH ≈ 5) in which the solution was stabilized with sulfosalicylic acid. The average chemical concentration of the nanowires can be systematically shifted from rich palladium to rich iron by changing the growth potential. The study of the microstructure by transmission electron microscopy indicates high chemical inhomogeneities due to phase coexistence between rich palladium regions (with FCC structure) and rich iron regions. The latter present a combination of BCC and amorphous phases. The average chemical composition of the nanowires can be better adjusted by using a low frequency square wave voltage excitation (alternating rich Pd and rich Fe regions). However, independently of the growth process, the nanowires morphology collapses after thermal annealing. This could be ascribed to fragile grain boundaries due to the presence of amorphous hydroxides and chemical impurities produced during the electrochemical process. - Highlights: • Synthesis of Fe−Pd nanowires by electrodeposition is reported. • Structural characterization of the nanowires by transmission electron microscopy. • The synthesis of nanowires with austenitic phase is limited by fragile grain boundaries.

  3. Impact of Nutrient Restriction on the Structure of Listeria monocytogenes Biofilm Grown in a Microfluidic System

    Science.gov (United States)

    Cherifi, Tamazight; Jacques, Mario; Quessy, Sylvain; Fravalo, Philippe

    2017-01-01

    Biofilm formation by the pathogen Listeria monocytogenes is a major concern in food industries. The aim of this work was to elucidate the effect of nutrient limitation on both biofilm architecture and on the viability of the bacteria in microfluidic growth conditions. Biofilm formation by two L. monocytogenes strains was performed in a rich medium (BHI) and in a 10-fold diluted BHI (BHI/10) at 30°C for 24 h by using both static conditions and the microfluidic system Bioflux. In dynamic conditions, biofilms grown in rich and poor medium showed significant differences as well in structure and in the resulting biovolume. In BHI/10, biofilm was organized in a knitted network where cells formed long chains, whereas in the rich medium, the observed structure was homogeneous cellular multilayers. Biofilm biovolume production in BHI/10 was significantly higher than in BHI in these dynamic conditions. Interestingly, biovolume of dead cells in biofilms formed under limited nutrient conditions (BHI/10) was significantly higher than in biofilms formed in the BHI medium. In the other hand, in static conditions, biofilm is organized in a multilayer cells and dispersed cells in a rich medium BHI and poor medium BHI/10 respectively. There was significantly more biomass in the rich medium compared to BHI/10 but no difference was noted in the dead/damaged subpopulation showing how L. monocytogenes biofilm could be affected by the growth conditions. This work demonstrated that nutrient concentration affects biofilm structure and the proportion of dead cells in biofilms under microfluidic condition. Our study also showed that limited nutrients play an important role in the structural stability of L. monocytogenes biofilm by enhancing cell death and liberating extracellular DNA. PMID:28567031

  4. Impact of Nutrient Restriction on the Structure of Listeria monocytogenes Biofilm Grown in a Microfluidic System

    Directory of Open Access Journals (Sweden)

    Tamazight Cherifi

    2017-05-01

    Full Text Available Biofilm formation by the pathogen Listeria monocytogenes is a major concern in food industries. The aim of this work was to elucidate the effect of nutrient limitation on both biofilm architecture and on the viability of the bacteria in microfluidic growth conditions. Biofilm formation by two L. monocytogenes strains was performed in a rich medium (BHI and in a 10-fold diluted BHI (BHI/10 at 30°C for 24 h by using both static conditions and the microfluidic system Bioflux. In dynamic conditions, biofilms grown in rich and poor medium showed significant differences as well in structure and in the resulting biovolume. In BHI/10, biofilm was organized in a knitted network where cells formed long chains, whereas in the rich medium, the observed structure was homogeneous cellular multilayers. Biofilm biovolume production in BHI/10 was significantly higher than in BHI in these dynamic conditions. Interestingly, biovolume of dead cells in biofilms formed under limited nutrient conditions (BHI/10 was significantly higher than in biofilms formed in the BHI medium. In the other hand, in static conditions, biofilm is organized in a multilayer cells and dispersed cells in a rich medium BHI and poor medium BHI/10 respectively. There was significantly more biomass in the rich medium compared to BHI/10 but no difference was noted in the dead/damaged subpopulation showing how L. monocytogenes biofilm could be affected by the growth conditions. This work demonstrated that nutrient concentration affects biofilm structure and the proportion of dead cells in biofilms under microfluidic condition. Our study also showed that limited nutrients play an important role in the structural stability of L. monocytogenes biofilm by enhancing cell death and liberating extracellular DNA.

  5. Influence of substrate quality on structural properties of AlGaN/GaN superlattices grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Schubert, F. [NaMLab gGmbH, Nöthnitzer Straße 64, 01187 Dresden (Germany); Merkel, U.; Schmult, S. [TU Dresden, Institute of Semiconductors and Microsystems, Nöthnitzer Straße 64, 01187 Dresden (Germany); Mikolajick, T. [NaMLab gGmbH, Nöthnitzer Straße 64, 01187 Dresden (Germany); TU Dresden, Institute of Semiconductors and Microsystems, Nöthnitzer Straße 64, 01187 Dresden (Germany)

    2014-02-28

    Short-period AlGaN/GaN superlattices were established as versatile test structures to investigate the structural properties of molecular beam epitaxy (MBE)-grown GaN and AlGaN layers and their dependence on the GaN substrate quality. X-ray diffractometry data of the investigated superlattices allow access to relevant structural parameters such as aluminum mole fraction and layer thicknesses. The occurrence of theoretically predicted intense high-order satellite peaks and pronounced interface fringes in the diffraction pattern reflects abrupt interfaces and perfect 2-dimensional growth resulting in smooth surfaces. The data unambiguously demonstrate that the structural quality of the MBE grown layers is limited by the structural properties of the GaN substrate.

  6. Void Structures in Regularly Patterned ZnO Nanorods Grown with the Hydrothermal Method

    Directory of Open Access Journals (Sweden)

    Yu-Feng Yao

    2014-01-01

    Full Text Available The void structures and related optical properties after thermal annealing with ambient oxygen in regularly patterned ZnO nanrorod (NR arrays grown with the hydrothermal method are studied. In increasing the thermal annealing temperature, void distribution starts from the bottom and extends to the top of an NR in the vertical (c-axis growth region. When the annealing temperature is higher than 400°C, void distribution spreads into the lateral (m-axis growth region. Photoluminescence measurement shows that the ZnO band-edge emission, in contrast to defect emission in the yellow-red range, is the strongest under the n-ZnO NR process conditions of 0.003 M in Ga-doping concentration and 300°C in thermal annealing temperature with ambient oxygen. Energy dispersive X-ray spectroscopy data indicate that the concentration of hydroxyl groups in the vertical growth region is significantly higher than that in the lateral growth region. During thermal annealing, hydroxyl groups are desorbed from the NR leaving anion vacancies for reacting with cation vacancies to form voids.

  7. Mosaic Structure Characterization of the AlInN Layer Grown on Sapphire Substrate

    Directory of Open Access Journals (Sweden)

    Engin Arslan

    2014-01-01

    Full Text Available The 150 nm thick, (0001 orientated wurtzite-phase Al1−xInxN epitaxial layers were grown by metal organic chemical vapor deposition on GaN (2.3 µm template/(0001 sapphire substrate. The indium (x concentration of the Al1−xInxN epitaxial layers was changed as 0.04, 0.18, 0.20, 0.47, and 0.48. The Indium content (x, lattice parameters, and strain values in the AlInN layers were calculated from the reciprocal lattice mapping around symmetric (0002 and asymmetric (10–15 reflection of the AlInN and GaN layers. The mosaic structure characteristics of the AlInN layers, such as lateral and vertical coherence lengths, tilt and twist angle, heterogeneous strain, and dislocation densities (edge and screw type dislocations of the AlInN epilayers, were investigated by using high-resolution X-ray diffraction measurements and with a combination of Williamson-Hall plot and the fitting of twist angles.

  8. Structural and luminescence properties of GaN nanowires grown using cobalt phthalocyanine as catalyst

    Science.gov (United States)

    Yadav, Shivesh; Rodríguez-Fernández, Carlos; de Lima, Mauricio M.; Cantarero, Andres; Dhar, Subhabrata

    2015-12-01

    Catalyst free methods have usually been employed to avoid any catalyst induced contamination for the synthesis of GaN nanowires with better transport and optical properties. Here, we have used a catalytic route to grow GaN nanowires, which show good optical quality. Structural and luminescence properties of GaN nanowires grown by vapor-liquid-solid technique using cobalt phthalocyanine as catalyst are systematically investigated as a function of various growth parameters such as the growth temperature and III/V ratio. The study reveals that most of the nanowires, which are several tens of microns long, grow along [ 10 1 ¯ 0 ] direction. Interestingly, the average wire diameter has been found to decrease with the increase in III/V ratio. It has also been observed that in these samples, defect related broad luminescence features, which are often present in GaN, are completely suppressed. At all temperatures, photoluminescence spectrum is found to be dominated only by a band edge feature, which comprises of free and bound excitonic transitions. Our study furthermore reveals that the bound excitonic feature is associated with excitons trapped in certain deep level defects, which result from the deficiency of nitrogen during growth. This transition has a strong coupling with the localized vibrational modes of the defects.

  9. Interfacial stability of CoSi2/Si structures grown by molecular beam epitaxy

    Science.gov (United States)

    George, T.; Fathauer, R. W.

    1992-01-01

    The stability of CoSi2/Si interfaces was examined in this study using columnar silicide structures grown on (111) Si substrates. In the first set of experiments, Co and Si were codeposited using MBE at 800 C and the resulting columnar silicide layer was capped by epitaxial Si. Deposition of Co on the surface of the Si capping layer at 800 C results in the growth of the buried silicide columns. The buried columns grow by subsurface diffusion of the deposited Co, suppressing the formation of surface islands of CoSi2. The column sidewalls appear to be less stable than the top and bottom interfaces, resulting in preferential lateral growth and ultimately in the coalescence of the columns to form a continuous buried CoSi2 layer. In the second set of experiments, annealing of a 250 nm-thick buried columnar layer at 1000 C under a 100 nm-thick Si capping layer results in the formation of a surface layer of CoSi2 with a reduction in the sizes of the CoSi2 columns. For a sample having a thicker Si capping layer the annealing leads to Ostwald ripening producing buried equiaxed columns. The high CoSi2/Si interfacial strain could provide the driving force for the observed behavior of the buried columns under high-temperature annealing.

  10. Effects of Complex Structured Anodic Oxide Dielectric Layer Grown in Pore Matrix for Aluminum Capacitor.

    Science.gov (United States)

    Shin, Jin-Ha; Yun, Sook Young; Lee, Chang Hyoung; Park, Hwa-Sun; Suh, Su-Jeong

    2015-11-01

    Anodization of aluminum is generally divided up into two types of anodic aluminum oxide structures depending on electrolyte type. In this study, an anodization process was carried out in two steps to obtain high dielectric strength and break down voltage. In the first step, evaporated high purity Al on Si wafer was anodized in oxalic acidic aqueous solution at various times at a constant temperature of 5 degrees C. In the second step, citric acidic aqueous solution was used to obtain a thickly grown sub-barrier layer. During the second anodization process, the anodizing potential of various ranges was applied at room temperature. An increased thickness of the sub-barrier layer in the porous matrix was obtained according to the increment of the applied anodizing potential. The microstructures and the growth of the sub-barrier layer were then observed with an increasing anodizing potential of 40 to 300 V by using a scanning electron microscope (SEM). An impedance analyzer was used to observe the change of electrical properties, including the capacitance, dissipation factor, impedance, and equivalent series resistance (ESR) depending on the thickness increase of the sub-barrier layer. In addition, the breakdown voltage was measured. The results revealed that dielectric strength was improved with the increase of sub-barrier layer thickness.

  11. Epitaxially grown zinc-blende structured Mn doped ZnO nanoshell on ZnS nanoparticles

    International Nuclear Information System (INIS)

    Limaye, Mukta V.; Singh, Shashi B.; Date, Sadgopal K.; Gholap, R.S.; Kulkarni, Sulabha K.

    2009-01-01

    Zinc oxide in the bulk as well as in the nanocrystalline form is thermodynamically stable in the wurtzite structure. However, zinc oxide in the zinc-blende structure is more useful than that in the wurtzite structure due to its superior electronic properties as well as possibility of efficient doping. Therefore, zinc oxide shell is grown epitaxially on zinc sulphide core nanoparticles having zinc-blende structure. It is shown that doping of manganese could be achieved in zinc oxide nanoshell with zinc-blende structure

  12. Structural characterization of ZnO thin films grown on various substrates by pulsed laser deposition

    International Nuclear Information System (INIS)

    Novotný, M; Bulíř, J; Lančok, J; Čížek, J; Kužel, R; Connolly, J; McCarthy, E; Krishnamurthy, S; Mosnier, J-P; Anwand, W; Brauer, G

    2012-01-01

    ZnO thin films were grown by pulsed laser deposition on three different substrates: sapphire (0 0 0 1), MgO (1 0 0) and fused silica (FS). The structure and morphology of the films were characterized by x-ray diffraction and scanning electron microscopy and defect studies were carried out using slow positron implantation spectroscopy (SPIS). Films deposited on all substrates studied in this work exhibit the wurtzite ZnO structure and are characterized by an average crystallite size of 20-100 nm. However, strong differences in the microstructure of films deposited on various substrates were found. The ZnO films deposited on MgO and sapphire single-crystalline substrates exhibit local epitaxy, i.e. a well-defined relation between film crystallites and the substrate. Domains with different orientation relationships with the substrate were found in both films. On the other hand, the film deposited on the FS substrate exhibits fibre texture with random lateral orientation of crystallites. Extremely high compressive in-plane stress of σ ∼ 14 GPa was determined in the film deposited on the MgO substrate, while the film deposited on sapphire is virtually stress-free, and the film deposited on the FS substrate exhibits a tensile in-plane stress of σ ∼ 0.9 GPa. SPIS investigations revealed that the concentration of open-volume defects in the ZnO films is substantially higher than that in a bulk ZnO single crystal. Moreover, the ZnO films deposited on MgO and sapphire single-crystalline substrates exhibit a significantly higher density of defects than the film deposited on the amorphous FS substrate. (paper)

  13. Fabrication of moth-eye structure on p-GaN layer of GaN-based LEDs for improvement of light extraction

    International Nuclear Information System (INIS)

    Hong, Eun-Ju; Byeon, Kyeong-Jae; Park, Hyoungwon; Hwang, Jaeyeon; Lee, Heon; Choi, Kyungwoo; Jung, Gun Young

    2009-01-01

    Moth-eye structures were produced on a p-GaN top cladding layer by UV imprint and inductively coupled plasma (ICP) etch processes in order to improve the light extraction efficiency of GaN-based green light-emitting diodes (LEDs). The height and shape of moth-eye structures were adjusted by controlling the thickness of Cr mask layer and ICP etching time. The transmittance of LED device stacks with moth-eye structure was increased up to 1.5-2.5 times, compared to identical LED sample without moth-eye structure and the intensity of photoluminescence from the InGaN multi-quantum well layer of LED sample with moth-eye structure was 5-7 times higher than that of the LED sample without the moth-eye structure.

  14. Structural disorder of natural BimSen superlattices grown by molecular beam epitaxy

    Science.gov (United States)

    Springholz, G.; Wimmer, S.; Groiss, H.; Albu, M.; Hofer, F.; Caha, O.; Kriegner, D.; Stangl, J.; Bauer, G.; Holý, V.

    2018-05-01

    The structure and morphology of BimSen epitaxial layers with compositions ranging from Bi2Se3 to the Bi1Se1 grown by molecular beam epitaxy with different flux compositions are investigated by transmission electron microscopy, high-resolution x-ray diffraction, and atomic force microscopy. It is shown that the lattice structure changes significantly as a function of the beam flux composition, i.e., Se/BiSe flux ratio that determines the stoichiometry of the layers. A perfect Bi2Se3 phase is formed only with a sufficiently high additional Se flux, whereas Bi1Se1 is obtained when only a BiSe compound source without additional Se is used. For intermediate values of the excess Se flux during growth, Bi2Se3 -δ layers are obtained with the Se deficit δ varying between 0 and 1. This Se deficit is accommodated by incorporation of additional Bi-Bi double layers into the Bi2Se3 structure that otherwise exclusively consists of Se-Bi-Se-Bi-Se quintuple layers. While a periodic insertion of such Bi double layers would result in the formation of natural BimSen superlattices, we find that this Bi double-layer insertion is rather stochastic with a high degree of disorder depending on the film composition. Therefore, the structure of such epilayers is better described by a one-dimensional paracrystal model, consisting of disordered sequences of quintuple and double layers rather than by strictly periodic natural superlattices. From detailed analysis of the x-ray diffraction data, we determine the dependence of the lattice parameters a and c and distances of the individual (0001) planes dj as a function of composition, evidencing that only the in-plane lattice parameter a shows a linear dependence on composition. The simulation of the diffraction curves with the random stacking paracrystal model yields an excellent agreement with the experimental data and it brings quantitative information on the randomness of the stacking sequence, which is compared to growth modeling using Monte

  15. Properties–structure relationship research on LiCaPO4:Eu2+ as blue phosphor for NUV LED application

    International Nuclear Information System (INIS)

    Zhang, Xinguo; Mo, Fuwang; Zhou, Liya; Gong, Menglian

    2013-01-01

    Graphical abstract: The graphical abstract shows the excitation and emission spectrum of LiCaPO 4 :Eu 2+ , and the CIE coordinates of LiCaPO 4 :Eu 2+ . The inset shows the photo of blue LED prepared by LiCaPO 4 :Eu 2+ and NUV chip. It indicates that this phosphor can be excited by UV light and emit strong greenish-blue light. Highlights: •Pure phase blue phosphors of LiCaPO 4 :Eu 2+ with a hexagonal structure were first prepared via solid-state method. •The crystallographic site of Eu 2+ ion in the LiCaPO 4 lattice was identified as 8-fold Ca 2+ site. •The phosphor exhibits excellent thermal stability and the corresponding mechanism was thermal assisted ionization. •Bright and high color purity blue LED prototype based on LiCaPO 4 :Eu 2+ phosphor was fabricated. -- Abstract: Blue-emitting phosphors of Eu 2+ -activated LiCaPO 4 with a hexagonal structure were prepared via a conventional solid-state method. The XRD, PL spectra and thermal quenching were applied to characterize the phosphors. The crystallographic site of Eu 2+ ion in the LiCaPO 4 lattice was identified and discussed. The optimized LiCaPO 4 :0.03Eu 2+ exhibits the bright greenish-blue emission with CIE coordinates of (0.119, 0.155) and a quantum efficiency of 52%. The critical energy-transfer distance was confirmed as ∼18 Å by both calculated crystal structure method and experimental spectral method. The thermal stability of LiCaPO 4 :Eu 2+ was evaluated by temperature-dependent PL spectra, and the thermal quenching mechanism was found to be thermal assisted ionization. Prototype blue LEDs with high color purity and good current stability were fabricated

  16. Woody plant diversity and structure of shade-grown-coffee plantations in Northern Chiapas, Mexico

    Directory of Open Access Journals (Sweden)

    Lorena Soto-Pinto

    2001-12-01

    Full Text Available Shade-grown coffee is an agricultural system that contains some forest-like characteristics. However, structure and diversity are poorly known in shade coffee systems. In 61 coffee-growers’ plots of Chiapas, Mexico, structural variables of shade vegetation and coffee yields were measured, recording species and their use. Coffee stands had five vegetation strata. Seventy seven woody species mostly used as wood were found (mean density 371.4 trees per hectare. Ninety percent were native species (40% of the local flora, the remaining were introduced species, mainly fruit trees/shrubs. Diametric distribution resembles that of a secondary forest. Principal Coordinates Analysis grouped plots in four classes by the presence of Inga, however the majority of plots are diverse. There was no difference in equitability among groups or coffee yields. Coffee yield was 835 g clean coffee per shrub, or ca. 1668 kg ha-1. There is a significant role of shade-grown coffee as diversity refuge for woody plants and presumably associated fauna, as well as an opportunity for shade-coffee growers to participate in the new biodiversity-friendly-coffee marketEl café bajo sombra es un sistema agrícola que contiene algunas características de los bosques. Sin embargo, las características estructurales y de diversidad de la sombra del café son poco conocidas. En 61 parcelas de productores del norte de Chiapas, Mexico, se midieron variables estructurales de la vegetación de sombra y los rendimientos de café, registrando las especies y sus usos. Los cafetales presentaron cinco estratos de vegetación. Se encontraron 77 especies leñosas, la mayoría de uso maderable (densidad promedio de 371.4 árboles por hectárea. Noventa por ciento fueron especies nativas (40% de la flora local, el porcentaje restante fueron especies introducidas, principalmente árboles o arbustos frutales. La distribución diamétrica se asemeja a la distribución típica de bosques secundarios

  17. Physical, thermal, structural and optical properties of Dy3+ doped lithium alumino-borate glasses for bright W-LED

    International Nuclear Information System (INIS)

    Pawar, P.P.; Munishwar, S.R.; Gautam, S.; Gedam, R.S.

    2017-01-01

    Rare earth (RE) doped glasses have potential applications due to their emission efficiencies of 4f–4 f and 4f–5d electronic transitions. Among all the rare earths, Dy 3+ doped glasses have drawn much interest among the researchers for their intense emission in the visible region from 470 to 500 nm and around 570 to 600 nm. The physical, thermal, structural and optical properties of Dy 3+ doped lithium alumino-borate glasses (LABD glasses) have been studied for white LED (W-LED) application. The glasses were synthesized by conventional melt quench technique. X-ray diffraction spectra revealed the amorphous nature of the glass sample. An FTIR spectrum was carried out to study the glass structure and various functional groups present in the LABD glasses. Optical absorption spectra were recorded by UV–vis-NIR spectrometer. Allowed direct and indirect band gaps were obtained by Tauc's plot. Thermal parameters like glass thermal stability (∆T), Hruby's parameter (K gl ), etc. were calculated by DTA graph. Photoluminescence excitation and emission spectra's were measured at room temperature. The emission spectra shows two intense emission bands at around 482 nm (blue) and 574 nm (yellow) corresponds to the 4 F 9/2 → 6 H 15/2 and 4 F 9/2 → 6 H 13/2 transitions respectively along with one feeble band at 662 nm (red) corresponds to 4 F 9/2 → 6 H 11/2 transition. The CIE chromaticity co-ordinates were calculated for all glass samples. CIE chromaticity diagram shows glass LABD-4 containing 0.5 mol% Dy 2 O 3 with colour co-ordinates X = 0.34 and Y = 0.38 have highest emission intensity. These glasses having emission in the white region and thus can be used for bright white LED.

  18. Structural Modifications of Fructans in Aloe barbadensis Miller (Aloe Vera) Grown under Water Stress.

    Science.gov (United States)

    Salinas, Carlos; Handford, Michael; Pauly, Markus; Dupree, Paul; Cardemil, Liliana

    2016-01-01

    Aloe barbadensis Miller (Aloe vera) has a Crassulaceae acid metabolism which grants the plant great tolerance to water restrictions. Carbohydrates such as acemannans and fructans are among the molecules responsible for tolerating water deficit in other plant species. Nevertheless, fructans, which are prebiotic compounds, have not been described nor studied in Aloe vera, whose leaf gel is known to possess beneficial pharmaceutical, nutritional and cosmetic properties. As Aloe vera is frequently cultivated in semi-arid conditions, like those found in northern Chile, we investigated the effect of water deficit on fructan composition and structure. For this, plants were subjected to different irrigation regimes of 100%, 75%, 50% and 25% field capacity (FC). There was a significant increase in the total sugars, soluble sugars and oligo and polyfructans in plants subjected to water deficit, compared to the control condition (100% FC) in both leaf tips and bases. The amounts of fructans were also greater in the bases compared to the leaf tips in all water treatments. Fructans also increase in degree of polymerization with increasing water deficit. Glycosidic linkage analyses by GC-MS, led to the conclusion that there are structural differences between the fructans present in the leaves of control plants with respect to plants irrigated with 50% and 25% FC. Therefore, in non-stressed plants, the inulin, neo-inulin and neo-levan type of fructans predominate, while in the most stressful conditions for the plant, Aloe vera also synthesizes fructans with a more branched structure, the neofructans. To our knowledge, the synthesis and the protective role of neo-fructans under extreme water deficit has not been previously reported.

  19. Optical and Micro-Structural Characterization of MBE Grown Indium Gallium Nitride Polar Quantum Dots

    KAUST Repository

    El Afandy, Rami

    2011-07-07

    Gallium nitride and related materials have ushered in scientific and technological breakthrough for lighting, mass data storage and high power electronic applications. These III-nitride materials have found their niche in blue light emitting diodes and blue laser diodes. Despite the current development, there are still technological problems that still impede the performance of such devices. Three-dimensional nanostructures are proposed to improve the electrical and thermal properties of III-nitride optical devices. This thesis consolidates the characterization results and unveils the unique physical properties of polar indium gallium nitride quantum dots grown by molecular beam epitaxy technique. In this thesis, a theoretical overview of the physical, structural and optical properties of polar III-nitrides quantum dots will be presented. Particular emphasis will be given to properties that distinguish truncated-pyramidal III-nitride quantum dots from other III-V semiconductor based quantum dots. The optical properties of indium gallium nitride quantum dots are mainly dominated by large polarization fields, as well as quantum confinement effects. Hence, the experimental investigations for such quantum dots require performing bandgap calculations taking into account the internal strain fields, polarization fields and confinement effects. The experiments conducted in this investigation involved the transmission electron microscopy and x-ray diffraction as well as photoluminescence spectroscopy. The analysis of the temperature dependence and excitation power dependence of the PL spectra sheds light on the carrier dynamics within the quantum dots, and its underlying wetting layer. A further analysis shows that indium gallium nitride quantum dots through three-dimensional confinements are able to prevent the electronic carriers from getting thermalized into defects which grants III-nitrides quantum dot based light emitting diodes superior thermally induced optical

  20. Structural characterization of one-dimensional ZnO-based nanostructures grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Sallet, Vincent; Falyouni, Farid; Marzouki, Ali; Haneche, Nadia; Sartel, Corinne; Lusson, Alain; Galtier, Pierre [Groupe d' Etude de la Matiere Condensee (GEMAC), CNRS-Universite de Versailles St-Quentin, Meudon (France); Agouram, Said [SCSIE, Universitat de Valencia, Burjassot (Spain); Enouz-Vedrenne, Shaima [Thales Research and Technology France, Palaiseau (France); Munoz-Sanjose, Vicente [Departamento de Fisica Aplicada y Electromagnetismo, Universitat de Valencia, Burjassot (Spain)

    2010-07-15

    Various one-dimensional (1D) ZnO-based nanostructures, including ZnO nano-wires (NWs) grown using vapour-liquid-solid (VLS) process, ZnO/ZnSe core/shell, nitrogen-doped ZnO and ZnMgO NWs were grown by metalorganic chemical vapour deposition (MOCVD). Transmission electron microscopy (TEM) analysis is presented. For all the samples, a high crystalline quality is observed. Some features are emphasized such as the gold contamination of ZnO wires grown under the metal droplets in the VLS process. It is concluded that MOCVD is a suitable technique for the realization of original ZnO nanodevices. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  1. Studies in crystal structure and luminescence properties of Eu3+-doped metal tungstate phosphors for white LEDs

    International Nuclear Information System (INIS)

    Lee, Gwan-Hyoung; Kang, Shinhoo

    2011-01-01

    The correlation between the crystal structure and luminescent properties of Eu 3+ -doped metal tungstate phosphors for white LEDs was investigated. Red-emitting A 4-3x (WO 4 ) 2 :Eu x 3+ (A=Li, Na, K) and B (4-3x)/2 (WO 4 ) 2 :Eu x 3+ (B=Mg, Ca, Sr) phosphors were synthesized by solid-state reactions. The findings confirmed that these phosphors exhibited a strong absorption in the near UV to green range, due to the intra-configurational 4f-4f electron transition of Eu 3+ ions. The high doping concentration of Eu 3+ enhanced the absorption of near UV light and red emission without any detectable concentration quenching. Based on the results of a Rietveld refinement, it was attributed to the unique crystal structure. In the crystal structure of the Eu 3+ -doped metal tungstate phosphor, the critical energy transfer distance is larger than 5 A so that exchange interactions between Eu 3+ ions would occur with difficulty, even at a high doping concentration. The energy transfer between Eu 3+ ions, which causes a decrease in red emission with increasing concentration of Eu 3+ , appears to be due to electric multi-polar interactions. In addition, the Eu-O distance in the host lattice affected the shape of emission spectrum by splitting of emission peak at the 5 D 0 → 7 F 2 transition of Eu 3+ . - Highlights: → Eu 3+ -doped metal tungstate was synthesized as a red phosphor for white LEDs. → Crystal structure is tetragonal with a space group of I4 1 /c. → A strong absorption in the near UV to green range was observed. → High doping of Eu 3+ enhanced the absorption of near UV light and red emission.

  2. Strain-symmetrized Si/SiGe multi-quantum well structures grown by molecular beam epitaxy for intersubband engineering

    International Nuclear Information System (INIS)

    Zhao, M.; Karim, A.; Ni, W.-X.; Pidgeon, C.R.; Phillips, P.J.; Carder, D.; Murdin, B.N.; Fromherz, T.; Paul, D.J.

    2006-01-01

    Three strain-symmetrized Si/SiGe multi-quantum well structures, designed for probing the carrier lifetime of intrawell intersubband transitions between heavy hole 1 (HH1) and light hole 1 (LH1) states with transition energies below the optical phonon energy, were grown by molecular beam epitaxy at low temperature on fully relaxed SiGe virtual substrates. The grown structures were characterized by using various experimental techniques, showing a high crystalline quality and very precise growth control. The lifetime of the LH1 excited state was determined directly with pump-probe spectroscopy. The measurements indicated an increase of the lifetime by a factor of ∼2 due to the increasingly unconfined LH1 state, which agreed very well with the design. It also showed a very long lifetime of several hundred picoseconds for the holes excited out of the well to transit back to the well through a diagonal process

  3. Composition, structure and electrical properties of alumina barrier layers grown in fluoride-containing oxalic acid solutions

    Energy Technology Data Exchange (ETDEWEB)

    Jagminas, A. [Institute of Chemistry, A. Gostauto 9, LT-01108 Vilnius (Lithuania)], E-mail: jagmin@ktl.mii.lt; Vrublevsky, I. [Department of Microelectricals, Belarusian State University of Informatics and Radioelectricals, 6 Brovka Street, Minsk 220013 (Belarus); Kuzmarskyte, J.; Jasulaitiene, V. [Institute of Chemistry, A. Gostauto 9, LT-01108 Vilnius (Lithuania)

    2008-04-15

    The composition, structure and electrical properties of alumina barrier layers grown by anodic oxidation in F{sup -}-containing (FC) and F{sup -}-free (FF) oxalic acid solutions were studied using the re-anodizing/dissolution technique, Fourier-transformed infrared and X-ray photoelectron spectroscopy. These results confirmed formation in FC anodizing solutions of films structurally different from ones grown in FF oxalic acid baths. It was found that the barrier layer of FC alumina films is composed of two layers differing in the dissolution rate. These differences are related to the formation in the FC electrolyte of a barrier layer composed of a more microporous outer part and a thin, non-porous and non-scalloped inner part consisting of aluminum oxide and aluminum fluoride.

  4. Tuning of electrical and structural properties of indium oxide films grown by metal organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Wang, Ch.Y.; Cimalla, V.; Romanus, H.; Kups, Th.; Niebelschuetz, M.; Ambacher, O.

    2007-01-01

    Tuning of structural and electrical properties of indium oxide (In 2 O 3 ) films by means of metal organic chemical vapor deposition is demonstrated. Phase selective growth of rhombohedral In 2 O 3 (0001) and body-centered cubic In 2 O 3 (001) polytypes on (0001) sapphire substrates was obtained by adjusting the substrate temperature and trimethylindium flow rate. The specific resistance of the as-grown films can be tuned by about two orders of magnitude by varying the growth conditions

  5. Structural and optical properties of ZnO films grown on silicon and ...

    Indian Academy of Sciences (India)

    TECS

    Abstract. Photoluminescence (PL) properties of undoped ZnO thin films grown by rf magnetron sputtering on silicon .... voluted O1 s and (c) typical Zr 3d spectra of ZrO2/ZnO/Si film. .... strate doping concentration (NB) of ≈ 2⋅5 × 1015 cm–3 is.

  6. Domain structures of LiNbO3 crystals grown by a floating zone technique

    International Nuclear Information System (INIS)

    Kawakami, Shoji; Ishii, Eiichi; Tsuzuki, Akihiro; Sekiya, Tadashi; Torii, Yasuyoshi; Takahashi, Akio.

    1986-01-01

    LiNbO 3 single crystals were grown from the congruently melting composition by a floating zone technique. It was confirmed by etching that the single domain crystals were produced without applying any external electric field. When annealed above the Curie temperature, antiparallel domain appeared in the form of annual rings. (author)

  7. Nurse-led action research project for expanding nurses′ role in patient education in Iran: Process, structure, and outcomes

    Directory of Open Access Journals (Sweden)

    Parvaneh Khorasani

    2015-01-01

    Full Text Available Background: Patient education is among the lowest met need of patients in Iran; therefore, expansion of that role can result in greater professional accountability. This study aimed to explain the practical science of the process, structure, and outcomes of a nurse-led action research project to expand the nurses′ role in patient education in Iran. Materials and Methods: This study was part of a participatory action research. Daily communications and monthly joint meetings were held from January 2012 to February 2014 for planning and management. These were based on the research protocol, and the conceptual framework included the Mobilizing for Action through Planning and Partnerships process by means of Leadership for Change skills. Data were produced and gathered through participant observations. Administrative data included project records, official documents, artifacts, news, and reports, which were analyzed through qualitative content analysis. Results: A participatory project was established with three groups of participants organized from both academic and clinical fields. These consisted of a "core research support team," "two steering committees," and community representatives of clients and professionals as "feedback groups." A seven-stage process, named the "Nurse Educators: Al-Zahra Role Expansion Action Research" (NEAREAR process, resulted from the project, in which strategic issues were gradually developed and implemented through 32 action plans and quality improvement cycles of action research. Audits and supervision evaluations showed meaningful changes in capacity building components. Conclusions: A nurse-led ad hoc structure with academic-clinical partnerships and strategic management process was suggested as a possible practical model for expanding nurses′ educational role in similar contexts. Implications and practical science introduced in this action research could also be applicable for top managers and health system

  8. Nurse-led action research project for expanding nurses’ role in patient education in Iran: Process, structure, and outcomes

    Science.gov (United States)

    Khorasani, Parvaneh; Rassouli, Maryam; Parvizy, Soroor; Zagheri-Tafreshi, Mansoureh; Nasr-Esfahani, Mahmood

    2015-01-01

    Background: Patient education is among the lowest met need of patients in Iran; therefore, expansion of that role can result in greater professional accountability. This study aimed to explain the practical science of the process, structure, and outcomes of a nurse-led action research project to expand the nurses’ role in patient education in Iran. Materials and Methods: This study was part of a participatory action research. Daily communications and monthly joint meetings were held from January 2012 to February 2014 for planning and management. These were based on the research protocol, and the conceptual framework included the Mobilizing for Action through Planning and Partnerships process by means of Leadership for Change skills. Data were produced and gathered through participant observations. Administrative data included project records, official documents, artifacts, news, and reports, which were analyzed through qualitative content analysis. Results: A participatory project was established with three groups of participants organized from both academic and clinical fields. These consisted of a “core research support team,” “two steering committees,” and community representatives of clients and professionals as “feedback groups.” A seven-stage process, named the “Nurse Educators: Al-Zahra Role Expansion Action Research” (NEAREAR) process, resulted from the project, in which strategic issues were gradually developed and implemented through 32 action plans and quality improvement cycles of action research. Audits and supervision evaluations showed meaningful changes in capacity building components. Conclusions: A nurse-led ad hoc structure with academic–clinical partnerships and strategic management process was suggested as a possible practical model for expanding nurses’ educational role in similar contexts. Implications and practical science introduced in this action research could also be applicable for top managers and health system

  9. Nurse-led action research project for expanding nurses' role in patient education in Iran: Process, structure, and outcomes.

    Science.gov (United States)

    Khorasani, Parvaneh; Rassouli, Maryam; Parvizy, Soroor; Zagheri-Tafreshi, Mansoureh; Nasr-Esfahani, Mahmood

    2015-01-01

    Patient education is among the lowest met need of patients in Iran; therefore, expansion of that role can result in greater professional accountability. This study aimed to explain the practical science of the process, structure, and outcomes of a nurse-led action research project to expand the nurses' role in patient education in Iran. This study was part of a participatory action research. Daily communications and monthly joint meetings were held from January 2012 to February 2014 for planning and management. These were based on the research protocol, and the conceptual framework included the Mobilizing for Action through Planning and Partnerships process by means of Leadership for Change skills. Data were produced and gathered through participant observations. Administrative data included project records, official documents, artifacts, news, and reports, which were analyzed through qualitative content analysis. A participatory project was established with three groups of participants organized from both academic and clinical fields. These consisted of a "core research support team," "two steering committees," and community representatives of clients and professionals as "feedback groups." A seven-stage process, named the "Nurse Educators: Al-Zahra Role Expansion Action Research" (NEAREAR) process, resulted from the project, in which strategic issues were gradually developed and implemented through 32 action plans and quality improvement cycles of action research. Audits and supervision evaluations showed meaningful changes in capacity building components. A nurse-led ad hoc structure with academic-clinical partnerships and strategic management process was suggested as a possible practical model for expanding nurses' educational role in similar contexts. Implications and practical science introduced in this action research could also be applicable for top managers and health system policy makers in a wider range of practice.

  10. Interlayer exchange coupling, crystalline and magnetic structure in Fe/CsCl-FeSi multilayers grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Dekoster, J.; Degroote, S.; Meersschaut, J.; Moons, R.; Vantomme, A. [K.U. Leuven, Instituut voor Kern- en Stralingsfysica (Belgium); Bottyan, L.; Deak, L.; Szilagyi, E.; Nagy, D.L. [KFKI Research Institute for Particle and Nuclear Physics (Hungary); Baron, A.Q.R. [European Synchrotron Radiation Facility (France); Langouche, G. [K.U. Leuven, Instituut voor Kern- en Stralingsfysica (Belgium)

    1999-09-15

    Crystalline and magnetic structure as well as the interlayer exchange coupling in MBE grown Fe/FeSi multilayers are investigated. From conversion electron Moessbauer spectroscopy and ion beam channeling measurements the spacer FeSi material is found to be stabilized in a crystalline metastable metallic FeSi phase with the CsCl structure. Strong non-oscillatory interlayer exchange coupling is identified with magnetometry and synchrotron Moessbauer reflectometry. From the fits of the time spectrum and the resonant {phi}-{phi} scans a model for the sublayer magnetization of the multilayer is deduced.

  11. Strain and Structure Heterogeneity in MoS2 Atomic Layers Grown by Chemical Vapour Deposition

    Science.gov (United States)

    2014-11-18

    cture heterogeneity in MoS2 atomiclayers grown by chemical vapour deposition 6. AUTHORS Zheng Liu, Matin Amani, Sina Najmaei, Quan Xu, Xiaolong Zou...deposition Zheng Liu1•2•3·*, Matin Amani4·*, Sina Najmaei5·*, Quan Xu6•7, Xiaolong Zou5, Wu Zhou8, Ting Yu9, Caiyu Qiu9, A Glen Birdwell4, Frank J. Crowne4

  12. Electrical and structural characterization of as-grown and annealed hydrothermal bulk ZnO

    International Nuclear Information System (INIS)

    Kassier, G. H.; Hayes, M.; Auret, F. D.; Mamor, M.; Bouziane, K.

    2007-01-01

    Hall effect measurements in the range 20-370 K on as-grown and annealed hydrothermal bulk ZnO have been performed. The bulk conductivity in the highly resistive as-grown sample was found to decrease and then increase after annealing at 550 deg. C and 930 deg. C, respectively. The conduction in the as-grown material is attributed to a deep donor which is replaced by a much shallower donor after annealing at 930 deg. C. Annealing at both temperatures also produced strong surface conduction effects. Nondegenerate low-mobility surface conduction dominated the electrical properties of the sample annealed at 550 deg. C, while a degenerate surface channel was formed after annealing at 930 deg. C. In addition, Rutherford backscattering and channeling spectrometry (RBS/C) was used to assess the effect of annealing on the crystalline quality of the samples. RBS/C measurements reveal that annealing at 930 deg. C leads to significant improvement of the crystalline quality of the material, while annealing at 550 deg. C results in the segregation of a nonchanneling impurity at the surface

  13. Atomic structure of defects in GaN:Mg grown with Ga polarity

    International Nuclear Information System (INIS)

    Liliental-Weber, Z.; Tomaszewicz, T.; Zakharov, D.; Jasinski, J.; O'Keefe, M.A.; Hautakangas, S.; Laakso, A.; Saarinen, K.

    2003-01-01

    Electron microscope phase images, produced by direct reconstruction of the scattered electron wave from a focal series of high-resolution images, were used to determine the nature of defects formed in GaN:Mg crystals. We studied bulk crystals grown from dilute solutions of atomic nitrogen in liquid gallium at high pressure and thin films grown by the MOCVD method. All the crystals were grown with Ga-polarity. In both types of samples the majority of defects were three dimensional Mg-rich hexagonal pyramids with bases on the (0001) plane and six walls on {11(und 2)3} planes seen in cross-section as triangulars. Some other defects appear in cross-section as trapezoidal (rectangular) defects as a result of presence of truncated pyramids. Both type of defects have hollow centers. They are decorated by Mg on all six side walls and a base. The GaN which grows inside on the defect walls shows polarity inversion. It is shown that change of polarity starts from the defect tip and propagates to the base, and that the stacking sequence changes from ab in the matrix to bc inside the defect. Exchange of the Ga sublattice with the N sublattice within the defect leads to 0.6 ± 0.2(angstrom) displacement between Ga sublattices outside and inside the defects. It is proposed that lateral overgrowth of the cavities formed within the defect takes place to restore matrix polarity on the defect base

  14. Enhanced photocatalytic properties of hierarchical three-dimensional TiO{sub 2} grown on femtosecond laser structured titanium substrate

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Ting, E-mail: huangting@bjut.edu.cn; Lu, Jinlong; Xiao, Rongshi; Wu, Qiang; Yang, Wuxiong

    2017-05-01

    Highlights: • The hierarchical 3D-TiO{sub 2} is fabricated on femtosecond laser structured Ti substrate. • The formation mechanism of hierarchical 3D-TiO{sub 2} is proposed. • The structure-induced improvement of photocatalytic activity is reported. - Abstract: Three-dimensional micro-/nanostructured TiO{sub 2} (3D-TiO{sub 2}) fabricated on titanium substrate effectively improves its performance in photocatalysis, dye-sensitized solar cell and lithium-ion battery applications. In this study, the hierarchical 3D-TiO{sub 2} with anatase phase directly grown on femtosecond laser structured titanium substrate is reported. First, the primary columnar arrays were fabricated on the surface of titanium substrate by femtosecond laser structuring. Next, the secondary nano-sheet substructures were grown on the primary columnar arrays by NaOH hydrothermal treatment. Followed by ion-exchange process in HCl and annealing in the air, the hierarchical anatase 3D-TiO{sub 2} was achieved. The hierarchical anatase 3D-TiO{sub 2} exhibited enhanced performances in light harvesting and absorption ability compared to that of nano-sheet TiO{sub 2} grown on flat titanium surface without femtosecond laser structuring. The photocatalytic degradation of methyl orange reveals that photocatalytic efficiency of the hierarchical anatase 3D-TiO{sub 2} was improved by a maximum of 57% compared to that of nano-sheet TiO{sub 2} (55% vs 35%). Meanwhile, the hierarchical anatase 3D-TiO{sub 2} remained mechanically stable and constant in consecutive degradation cycles, which promises significance in practical application.

  15. Physical, structural and luminescence investigation of Eu3+-doped lithium-gadolinium bismuth-borate glasses for LEDs

    Science.gov (United States)

    Zaman, F.; Rooh, G.; Srisittipokakun, N.; Wongdeeying, C.; Kim, H. J.; Kaewkhao, J.

    2018-06-01

    The aim of the current report is to fabricate Eu3+-doped glasses with the chemical composition of 50Li2O-15Gd2O3-5Bi2O3-(30-x)B2O3-xEu2O3 (where x = 0.5, 1.0, 1.5, 2.0 and 2.5 mol%), with the help of conventional melt quenching technique. The fabricated glasses have been studied with help of physical, structural and luminescence properties for application of LEDs. The structural properties were investigated by XRD and FTIR spectra. Physical properties have been measured. Direct and indirect optical energy band gap (Eg) have been calculated and found to be increasing with Eu2O3 concentration. Luminescence spectra have been observed from photo and radioluminescence spectra and found in good agreement with each other, however the concentration quenching was not determined for the samples. The high-covalence and asymmetric nature was confirmed from Photoluminescence emission and RL emission transition as well as from the higher values of luminescence intensity ratio. The JO parameters have been found for the better performance of lasing materials. The lifetime's data have been found to be decreasing from 1.64 to 1.50 ms, which is the confirmation of energy transfer in Eu3+ ions through cross relaxations. From the calculated properties it has been suggested that the present glass samples might be good for red-light emitting devices.

  16. The influence of growth parameters on the structure and composition of CuGaS2 epilayers grown by MOVPE

    International Nuclear Information System (INIS)

    Branch, M.S.; Berndt, P.R.; Leitch, A.W.R.; Botha, J.R.; Weber, J.

    2006-01-01

    The influence of various growth parameters on the composition and structure of MOVPE-grown CuGaS 2 is presented. The Cu content of the grown layers is shown to decrease in the direction of the carrier gas flow, whilst the Ga and S content are shown to increase. Changing the flow of Cu(hfac) 2 .Et 3 N to vary the I/III ratio in the vapour phase has a greater effect on the composition of grown epilayers than changing the flow of TEGa. This is indicative of Cu being the minority species present at the growth interface. A larger rate of decrease in the Cu content with an increase in both TEGa and DtBS flows suggests pre-reactions between Cu(hfac) 2 .Et 3 N and both TEGa and DtBS precursors. Lower substrate temperatures are suggested to be thermodynamically unfavourable for the growth of CuGaS 2 , yet enhance the formation of Ga x S y phases. The surface morphology of Cu-rich layers are typically inferior with a high density of crystallites, whilst Cu-poor epilayers are characteristically smooth with a single XRD reflection attributed to the (004) plane of c-axis-orientated epitaxial material

  17. Yield and yield structure of spring barley (Hodeum vulgare L. grown in monoculture after different stubble crops

    Directory of Open Access Journals (Sweden)

    Dorota Gawęda

    2012-12-01

    Full Text Available A field experiment was conducted in the period 2006- 2008 in the Uhrusk Experimental Farm belonging to the University of Life Sciences in Lublin. The experimental factor was the type of stubble crop ploughed in each year after harvest of spring barley: white mustard, lacy phacelia, winter rape, and a mixture of narrow-leaf lupin with field pea. In the experiment, successive spring barley crops were grown one after the other (in continuous monoculture. The aim of the experiment was to evaluate the effect of stubble crops used on the size and structure of barley yield. The three-year study showed an increasing trend in grain yield of spring barley grown after the mixture of legumes, lacy phacelia, and white mustard compared to its size in the treatment with no cover crop. Straw yield was significantly higher when barley was grown after the mixture of narrowleaf lupin with field pea than in the other treatments of the experiment. The type of ploughed-in stubble crop did not modify significantly plant height, ear length, and grain weight per ear. Growing the mixture of leguminous plants as a cover crop resulted in a significant increase in the density of ears per unit area in barley by an average of 14.7% relative to the treatment with winter rape. The experiment also showed the beneficial effect of the winter rape cover crop on 1000-grain weight of spring barley compared to that obtained in the treatments with white mustard and the mixture of legumes. All the cover crops caused an increase in the number of grains per ear of barley relative to that found in the control treatment. However, this increase was statistically proven only for the barley crops grown after lacy phacelia and the mixture of legumes.

  18. Characterization of as-grown and heavily irradiated GaN epitaxial structures by photoconductivity and photoluminescence

    International Nuclear Information System (INIS)

    Gaubas, E.; Jurs e-dot nas, S.; Tomasiunas, R.; Vaitkus, J.; Zukauskas, A.; Blue, A.; Rahman, M.; Smith, K.M.

    2005-01-01

    The influence of radiation defects on photoconductivity transients and photoluminescence (PL) spectra have been examined in semi-insulating GaN epitaxial layers grown on bulk n-GaN/sapphire substrates. Defects induced by 10-keV X-ray irradiation with a dose of 600Mrad and 100-keV neutrons with fluences of 5x10 14 and 10 16 cm -2 have been revealed through contact photoconductivity and microwave absorption transients. The amplitude of the initial photoconductivity decay is significantly reduced by the radiation defect density. A simultaneous decrease with radiation-induced defect density is also observed in the steady-state PL intensity of yellow, blue and ultraviolet bands peaked at 2.18, 2.85, and 3.42eV, respectively. The decrease of the PL intensity is accompanied by an increase of asymptotic decay lifetime, which is due to excess carrier multi-trapping. The decay can be described by the stretched exponential approximation exp[-(t/τ) α ] with different values of α in as-grown material (α∼0.7) and irradiated samples (α∼0.3). The value of the fracton dimension d s of the disordered structure, evaluated as d s =2α/(1-α), changes from 4.7 to 0.86 for as-grown and irradiated material, respectively, implying percolative carrier motion on an infinite cluster of dislocations net in the as-grown material and cluster fragmentation into finite fractons after irradiation

  19. Characterization for rbs of Titanium Oxide thin films grown by Dip Coating in a coloidal suspension of nano structured Titanium Oxide

    International Nuclear Information System (INIS)

    Pedrero, E.; Vigil, E.; Zumeta, I.

    1999-01-01

    The depth of Titanium Oxide thin films grown by Dip Coating in a coloidal suspension of nano structured Titanium Oxide was characterized using Rutherford Backscattering Spectrometry. Film depths are compared in function of bath and suspension parameters

  20. Characterization of structural defects in SnSe2 thin films grown by molecular beam epitaxy on GaAs (111)B substrates

    Science.gov (United States)

    Tracy, Brian D.; Li, Xiang; Liu, Xinyu; Furdyna, Jacek; Dobrowolska, Margaret; Smith, David J.

    2016-11-01

    Tin selenide thin films have been grown by molecular beam epitaxy on GaAs (111)B substrates at a growth temperature of 150 °C, and a microstructural study has been carried out, primarily using the technique of transmission electron microscopy. The Se:Sn flux ratio during growth was systematically varied and found to have a strong impact on the resultant crystal structure and quality. Low flux ratios (Se:Sn=3:1) led to defective films consisting primarily of SnSe, whereas high flux ratios (Se:Sn>10:1) gave higher quality, single-phase SnSe2. The structure of the monoselenide films was found to be consistent with the Space Group Pnma with the epitaxial growth relationship of [011]SnSe// [ 1 1 bar 0 ] GaAs, while the diselenide films were consistent with the Space Group P 3 bar m1 , and had the epitaxial growth relationship [ 2 1 bar 1 bar 0 ]SnSe2// [ 1 1 bar 0 ] GaAs.

  1. Bonding structure and morphology of chromium oxide films grown by pulsed-DC reactive magnetron sputter deposition

    Energy Technology Data Exchange (ETDEWEB)

    Gago, R., E-mail: rgago@icmm.csic.es [Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, E-28049 Madrid (Spain); Vinnichenko, M. [Fraunhofer-Institut für Keramische Technologien und Systeme IKTS, D-01277 Dresden (Germany); Hübner, R. [Helmholtz-Zentrum Dresden – Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, 01328 Dresden (Germany); Redondo-Cubero, A. [Departamento de Física Aplicada and Centro de Microanálisis de Materiales, Universidad Autónoma de Madrid, E-28049 Madrid (Spain)

    2016-07-05

    Chromium oxide (CrO{sub x}) thin films were grown by pulsed-DC reactive magnetron sputter deposition in an Ar/O{sub 2} discharge as a function of the O{sub 2} fraction in the gas mixture (ƒ) and for substrate temperatures, T{sub s}, up to 450 °C. The samples were analysed by Rutherford backscattering spectrometry (RBS), spectroscopic ellipsometry (SE), atomic force microscopy (AFM), scanning (SEM) and transmission (TEM) electron microscopy, X-ray diffraction (XRD), and X-ray absorption near-edge structure (XANES). On unheated substrates, by increasing ƒ the growth rate is higher and the O/Cr ratio (x) rises from ∼2 up to ∼2.5. Inversely, by increasing T{sub s} the atomic incorporation rate drops and x falls to ∼1.8. XRD shows that samples grown on unheated substrates are amorphous and that nanocrystalline Cr{sub 2}O{sub 3} (x = 1.5) is formed by increasing T{sub s}. In amorphous CrO{sub x}, XANES reveals the presence of multiple Cr environments that indicate the growth of mixed-valence oxides, with progressive promotion of hexavalent states with ƒ. XANES data also confirms the formation of single-phase nanocrystalline Cr{sub 2}O{sub 3} at elevated T{sub s}. These structural changes also reflect on the optical and morphological properties of the films. - Highlights: • XANES of CrO{sub x} thin films grown by pulsed-DC reactive magnetron sputtering. • Identification of mixed-valence amorphous CrO{sub x} oxides on unheated substrates. • Promotion of amorphous chromic acid (Cr{sup VI}) by increasing O{sub 2} partial pressure. • Production of single-phase Cr{sub 2}O{sub 3} films by increasing substrate temperature. • Correlation of bonding structure with morphological and optical properties.

  2. The structure and composition of lithium fluoride films grown by off-axis pulsed laser ablation

    International Nuclear Information System (INIS)

    Henley, S.J.; Ashfold, M.N.R.; Pearce, S.R.J.

    2003-01-01

    Alkali halide coatings have been reported to act as effective dipole layers to lower the surface work function and induce a negative electron affinity of diamond surfaces. Here, the results of the analysis of films grown on silicon and quartz substrates by 193 nm pulsed laser ablation from a commercially available sintered disk of LiF are reported. The morphology, composition and crystallinity of films grown are examined and suitable deposition parameters for optimising the growth are suggested. The ablation was shown to be very efficient at removing a large amount of material from the target, even at relatively low fluence. The morphology of the films produced was poor, however, with a high density of asperities categorised as either particulates produced by exfoliation, or as droplets produced by hydrodynamic sputtering. An improved morphology with smaller droplets and fewer particulates could be produced by mounting the substrate at an angle of 65 deg. to the axis of the ablation plume and using a fluence close to the measured ablation threshold of 1.2±0.1 J/cm 2 . The elemental composition of the films was shown to be indistinguishable from that of bulk LiF, despite evidence for significant recondensation of Li back onto the target. Films containing crystal grains oriented with the direction normal to the substrate surface were observed at substrate temperatures in excess of 300 deg. C. An improved extent of orientation was observed on the quartz substrates

  3. Electrical properties of MOS structures on nitrogen-doped Czochralski-grown silicon: A positron annihilation study

    International Nuclear Information System (INIS)

    Slugen, V.; Harmatha, L.; Tapajna, M.; Ballo, P.; Pisecny, P.; Sik, J.; Koegel, G.; Krsjak, V.

    2006-01-01

    Measurements of interface trap density, effective generation lifetime (GL) and effective surface generation velocity have been performed using different methods on selected MOS structures prepared on nitrogen-doped Czochralski-grown (NCz) silicon. The application of the positron annihilation technique using a pulsed low energy positron system (PLEPS) focused on the detection of nitrogen-related defects in NCz silicon in the near surface region. In the case of p-type Cz silicon, all the results could be used for the testing of homogeneity. In n-type Cz silicon, positron annihilation was found insensitive to nitrogen doping

  4. Physical properties and band structure of reactive molecular beam epitaxy grown oxygen engineered HfO{sub 2{+-}x}

    Energy Technology Data Exchange (ETDEWEB)

    Hildebrandt, Erwin; Kurian, Jose; Alff, Lambert [Institute of Materials Science, Technische Universitaet Darmstadt, 64287 Darmstadt (Germany)

    2012-12-01

    We have conducted a detailed thin film growth structure of oxygen engineered monoclinic HfO{sub 2{+-}x} grown by reactive molecular beam epitaxy. The oxidation conditions induce a switching between (111) and (002) texture of hafnium oxide. The band gap of oxygen deficient hafnia decreases with increasing amount of oxygen vacancies by more than 1 eV. For high oxygen vacancy concentrations, defect bands form inside the band gap that induce optical transitions and p-type conductivity. The resistivity changes by several orders of magnitude as a function of oxidation conditions. Oxygen vacancies do not give rise to ferromagnetic behavior.

  5. Surface structure determinations of crystalline ionic thin films grown on transition metal single crystal surfaces by low energy electron diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Roberts, Joel Glenn [Univ. of California, Berkeley, CA (United States)

    2000-05-01

    The surface structures of NaCl(100), LiF(100) and alpha-MgCl2(0001) adsorbed on various metal single crystals have been determined by low energy electron diffraction (LEED). Thin films of these salts were grown on metal substrates by exposing the heated metal surface to a molecular flux of salt emitted from a Knudsen cell. This method of investigating thin films of insulators (ionic salts) on a conducting substrate (metal) circumvents surface charging problems that plagued bulk studies, thereby allowing the use of electron-based techniques to characterize the surface.

  6. Electronic structure of Co islands grown on the {radical}3 x {radical}3-Ag/Ge(111) surface

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Xiao-Lan; Chou, Chi-Hao; Lin, Chun-Liang; Tomaszewska, Agnieszka; Fu, Tsu-Yi, E-mail: phtifu@phy.ntnu.edu.tw

    2011-09-30

    By means of room temperature scanning tunneling spectroscopy (RT STS), we have studied the electronic structure of two different Ag/Ge(111) phases as well as Co islands grown on the {radical}3 x {radical}3-Ag/Ge (111) forming either {radical}13 x {radical}13 or 2 x 2 patterns. The spectrum obtained from 4 x 4-Ag/Ge(111) structure shows the existence of a shoulder at 0.7 V which is also present in the electronic structure of the Ge(111)-c2 x 8 and indicates donation of Ge electrons to electronic states of the Ag-driven phase. However, this fact is not supported by the electronic spectrum taken from the {radical}3 x {radical}3-Ag/Ge (111). The complexity of the Co-{radical}13 x {radical}13 islands bonding with the substrate is mirrored by a large number of peaks in their electronic spectra. The spectra obtained from the Co-2 x 2 islands which had grown on the step differ from those taken from Co-2 x 2 islands located along the edge of the terrace by a number of peaks at negative sample bias. This discrepancy is elucidated in terms of dissimilarities of Co-substrate interaction accompanying Co islands growth on different areas of the stepped surface.

  7. Structure, interface abruptness and strain relaxation in self-assisted grown InAs/GaAs nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Frigeri, Cesare, E-mail: frigeri@imem.cnr.it [CNR-IMEM Institute, Parma (Italy); Scarpellini, David [L–NESS and Dept. Materials Science, University of Milano Bicocca, Milano (Italy); Department of Industrial Engineering University of Rome Tor Vergata, Rome (Italy); Fedorov, Alexey [LNESS and CNR-IFN, Como (Italy); Bietti, Sergio; Somaschini, Claudio [L–NESS and Dept. Materials Science, University of Milano Bicocca, Milano (Italy); Grillo, Vincenzo [CNR-IMEM Institute, Parma (Italy); CNR-S3-NANO Center, Modena (Italy); Esposito, Luca; Salvalaglio, Marco; Marzegalli, Anna; Montalenti, Francesco [L–NESS and Dept. Materials Science, University of Milano Bicocca, Milano (Italy); Sanguinetti, Stefano [L–NESS and Dept. Materials Science, University of Milano Bicocca, Milano (Italy); LNESS and CNR-IFN, Como (Italy)

    2017-02-15

    Highlights: • We study 2 critical issues (interface abruptness and strain release) in InAs/GaAs NWs. • Structural and chemical interface sharpness ≤1.5 nm, better than in previous reports. • Simultaneous elastic and plastic relaxation is shown that agrees with FEM simulations. • Structural, chemical and strain release investigations were performed by STEM. • New MBE self-seeded method whereby InAs is grown by splitting In and As depositions. - Abstract: The structure, interface abruptness and strain relaxation in InAs/GaAs nanowires grown by molecular beam epitaxy in the Ga self-catalysed mode on (111) Si have been investigated by transmission electron microscopy. The nanowires had the zincblende phase. The InAs/GaAs interface was atomically and chemically sharp with a width around 1.5 nm, i.e. significantly smaller than previously reported values. This was achieved by the consumption of the Ga droplet and formation of a flat top facet of the GaAs followed by the growth of InAs by splitting the depositions of In and As. Both elastic and plastic strain relaxation took place simultaneously. Experimental TEM results about strain relaxation very well agree with linear elasticity theory calculations by the finite element methods.

  8. Structure, interface abruptness and strain relaxation in self-assisted grown InAs/GaAs nanowires

    International Nuclear Information System (INIS)

    Frigeri, Cesare; Scarpellini, David; Fedorov, Alexey; Bietti, Sergio; Somaschini, Claudio; Grillo, Vincenzo; Esposito, Luca; Salvalaglio, Marco; Marzegalli, Anna; Montalenti, Francesco; Sanguinetti, Stefano

    2017-01-01

    Highlights: • We study 2 critical issues (interface abruptness and strain release) in InAs/GaAs NWs. • Structural and chemical interface sharpness ≤1.5 nm, better than in previous reports. • Simultaneous elastic and plastic relaxation is shown that agrees with FEM simulations. • Structural, chemical and strain release investigations were performed by STEM. • New MBE self-seeded method whereby InAs is grown by splitting In and As depositions. - Abstract: The structure, interface abruptness and strain relaxation in InAs/GaAs nanowires grown by molecular beam epitaxy in the Ga self-catalysed mode on (111) Si have been investigated by transmission electron microscopy. The nanowires had the zincblende phase. The InAs/GaAs interface was atomically and chemically sharp with a width around 1.5 nm, i.e. significantly smaller than previously reported values. This was achieved by the consumption of the Ga droplet and formation of a flat top facet of the GaAs followed by the growth of InAs by splitting the depositions of In and As. Both elastic and plastic strain relaxation took place simultaneously. Experimental TEM results about strain relaxation very well agree with linear elasticity theory calculations by the finite element methods.

  9. Structural and optical features of InGaAs quantum dots grown on Si(001) substrates

    CERN Document Server

    Vdovin, V I; Rzaev, M M; Burbaev, T M

    2002-01-01

    A multilayer GaAs/SiGe/Si heterostructure with InGaAs quantum dots (QDs) embedded in a GaAs layer was grown by molecular beam epitaxy (MBE) on a Si(001) substrate. A step-graded Si sub 1 sub - sub x Ge sub x (0 <= x <= 1) buffer layer and a GaAs layer with In sub y Ga sub 1 sub sub - sub y As (y approx 0.5) QDs were deposited consecutively in two different MBE systems. The heterostructure exhibits intense photoluminescence in the region of 1.3 mu m at room temperature. Perfect crystal InGaAs islands with height less than 10 nm are the sources of this radiation.

  10. Structural evolution of self-assisted GaAs nanowires grown on Si(111)

    Energy Technology Data Exchange (ETDEWEB)

    Biermanns, Andreas; Davydok, Anton; Pietsch, Ullrich [University of Siegen, Solid State Physics Group, Walter-Flex-Str. 3, 57072 Siegen (Germany); Breuer, Steffen; Geelhaar, Lutz [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

    2011-04-15

    GaAs nanowires are grown on Si(111) by self-assisted molecular beam epitaxy, and the ratio between wurtzite and zinc-blende phases is determined as function of nanowire length using asymmetric X-ray diffraction. We show that under the applied growth conditions, nanowires grow in both phases during the initial stage of growth, whereas the zinc-blende content increases with growth time and dominates in long nanowires. Compared to the zinc-blende units, the vertical lattice parameter of the wurtzite segments is 0.7% larger, as measured by the positions of respective diffraction peaks. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. Preparation and structural properties of YBCO films grown on GaN/c-sapphire hexagonal substrate

    Energy Technology Data Exchange (ETDEWEB)

    Chromik, S., E-mail: stefan.chromik@savba.sk [Institute of Electrical Engineering, SAS, Dubravska cesta 9, 84104 Bratislava (Slovakia); Gierlowski, P. [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Spankova, M.; Dobrocka, E.; Vavra, I.; Strbik, V.; Lalinsky, T.; Sojkova, M. [Institute of Electrical Engineering, SAS, Dubravska cesta 9, 84104 Bratislava (Slovakia); Liday, J.; Vogrincic, P. [Department of Microelectronics, Slovak Technical University, Ilkovicova 3, 81219 Bratislava (Slovakia); Espinos, J.P. [Instituto de Ciencia de Materiales de Sevilla, Avda Americo Vespucio 49, 41092 Sevilla (Spain)

    2010-07-01

    Epitaxial YBCO thin films have been grown on hexagonal GaN/c-sapphire substrates using DC magnetron sputtering and pulsed laser deposition. An MgO buffer layer has been inserted between the substrate and the YBCO film as a diffusion barrier. X-ray diffraction analysis indicates a c-axis oriented growth of the YBCO films. {Phi}-scan shows surprisingly twelve maxima. Transmission electron microscopy analyses confirm an epitaxial growth of the YBCO blocks with a superposition of three a-b YBCO planes rotated by 120 deg. to each other. Auger electron spectroscopy and X-ray photoelectron spectroscopy reveal no surface contamination with Ga even if a maximum substrate temperature of 700 deg. C is applied.

  12. Structural and morphological properties of ITO thin films grown by magnetron sputtering

    Science.gov (United States)

    Ghorannevis, Z.; Akbarnejad, E.; Ghoranneviss, M.

    2015-10-01

    Physical properties of transparent and conducting indium tin oxide (ITO) thin films grown by radiofrequency (RF) magnetron sputtering are studied systematically by changing deposition time. The X-ray diffraction (XRD) data indicate polycrystalline thin films with grain orientations predominantly along the (2 2 2) and (4 0 0) directions. From atomic force microscopy (AFM) it is found that by increasing the deposition time, the roughness of the film increases. Scanning electron microscopy (SEM) images show a network of a high-porosity interconnected nanoparticles, which approximately have a pore size ranging between 20 and 30 nm. Optical measurements suggest an average transmission of 80 % for the ITO films. Sheet resistances are investigated using four-point probes, which imply that by increasing the film thickness the resistivities of the films decrease to 2.43 × 10-5 Ω cm.

  13. Computational thermal analysis of cylindrical fin design parameters and a new methodology for defining fin structure in LED automobile headlamp cooling applications

    International Nuclear Information System (INIS)

    Sökmen, Kemal Furkan; Yürüklü, Emrah; Yamankaradeniz, Nurettin

    2016-01-01

    Highlights: • In the study, cooling of LED headlamps in automotive is investigated. • The study is based on free convection cooling of LED module. • Besides free convection, Monte Carlo model is used as radiation model as well. • A new algorithm is presented for designing optimum fin structure. • Suggested algorithm for optimum design is verified by various simulations. - Abstract: In this study, the effects of fin design, fin material, and free and forced convection on junction temperature in automotive headlamp cooling applications of LED lights are researched by using ANSYS CFX 14 software. Furthermore a new methodology is presented for defining the optimum cylindrical fin structure within the given limits. For measuring the performance of methodology, analyses are carried out for various ambient temperatures (25 °C, 50 °C and 80 °C) and different LED power dissipations (0.5 W, 0.75 W, 1 W and 1.25 W). Then, analyses are repeated at different heat transfer coefficients and different fin materials in order to calculate LED junction temperature in order to see if the fin structure proposed by the methodology is appropriate for staying below the given safety temperature limit. As a result, the suggested method has always proposed proper fin structures with optimum characteristics for given LED designs. As another result, for safe junction temperature ranges, it is seen that for all LED power dissipations, adding aluminum or copper plate behind the printed circuit board at low ambient temperatures is sufficient. Also, as the ambient temperature increases, especially in high powered LED lights, addition of aluminum is not sufficient and fin usage becomes essential. High heat transfer coefficient and using copper fin affect the junction temperature positively.

  14. Structural and magnetic properties of nickel nanowires grown in porous anodic aluminium oxide template by electrochemical deposition technique

    Science.gov (United States)

    Nugraha Pratama, Sendi; Kurniawan, Yudhi; Muhammady, Shibghatullah; Takase, Kouichi; Darma, Yudi

    2018-03-01

    We study the formation of nickel nanowires (Ni NWs) grown in porous anodic aluminium oxide (AAO) template by the electrochemical deposition technique. Here, the initial AAO template was grown by anodization of aluminium substrate in sulphuric acid solution. The cross-section, crystal structure, and magnetic properties of Ni NWs system were characterized by field-emission SEM, XRD, and SQUID. As a result, the highly-ordered Ni NWs are observed with the uniform diameter of 27 nm and the length from 31 to 163 nm. Based on XRD spectra analysis, Ni NWs have the face-centered cubic structure with the lattice parameter of 0.35 nm and average crystallite size of 17.19 nm. From SQUID measurement at room temperature, by maintaining the magnetic field perpendicular to Ni NWs axis, the magnetic hysteresis of Ni NWs system show the strong ferromagnetism with the coercivity and remanence ratio of ∼148 Oe and ∼0.23, respectively. The magnetic properties are also calculated by means of generalized gradient approximation methods. From the calculation result, we show that the ferromagnetism behavior comes from Ni NWs without any contribution from AAO template or the substrate. This study opens the potential application of Ni NWs system for novel functional magnetic devices.

  15. Optical Properties of InGaAs/ GaAs Multi Quantum Wells Structure Grown By Molecular Beam Epitaxy

    International Nuclear Information System (INIS)

    Mohd Sharizal Alias; Mohd Fauzi Maulud; Mohd Razman Yahya; Abdul Fatah Awang Mat; Suomalainen, Soile

    2008-01-01

    Inclusive analysis on the optical characteristics of InGaAs/ GaAs QW structure for 980 nm semiconductor laser operation is presented from experimental and theoretical point of view. The InGaAs/ GaAs quantum well structure is grown by molecular beam epitaxy at different indium composition and quantum well thickness for optical characteristic comparison. Photoluminescence spectra from the measurement show that the spectrum is in good agreement with the simulation results. Detail simulation on the material gain for the InGaAs/ GaAs quantum well as a function of carrier densities and operating temperature is also performed in order to optimize the semiconductor laser design for device fabrication. (author)

  16. Effects of buffer layer annealing temperature on the structural and optical properties of hydrothermal grown ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, X.Q.; Kim, C.R.; Lee, J.Y.; Heo, J.H.; Shin, C.M. [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Ryu, H., E-mail: hhryu@inje.ac.kr [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Chang, J.H. [Major of Nano Semiconductor, Korea Maritime University, 1 Dongsam-dong, Yeongdo-Ku, Busan 606-791 (Korea, Republic of); Lee, H.C. [Department of Mechatronics Engineering, Korea Maritime University, 1 Dongsam-dong, Yeongdo-Ku, Busan 606-791 (Korea, Republic of); Son, C.S. [Department of Electronic Materials Engineering, Silla University, Gwaebeop-dong, Sasang-gu, Busan 617-736 (Korea, Republic of); Lee, W.J. [Department of Nano Engineering, Dong-Eui University, 995 Eomgwangno, Busanjin-gu, Busan 614-714 (Korea, Republic of); Jung, W.G. [School of Advanced Materials Engineering, Kookmin University, 861-1 Jeongneung-dong, Seongbuk-gu, Seoul 136-702 (Korea, Republic of); Tan, S.T. [Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); Zhao, J.L. [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore); Sun, X.W. [Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore)

    2009-02-01

    ZnO was deposited on bare Si(1 0 0), as-deposited, and annealed ZnO/Si(1 0 0) substrates by hydrothermal synthesis. The effects of a ZnO buffer layer and its thermal annealing on the properties of the ZnO deposited by hydrothermal synthesis were studied. The grain size and root mean square (RMS) roughness values of the ZnO buffer layer increased after thermal annealing of the buffer layer. The effect of buffer layer annealing temperature on the structural and optical properties was investigated by photoluminescence, X-ray diffraction, atomic force microscopy, and scanning electron microscopy. Hydrothermal grown ZnO deposited on ZnO/Si(1 0 0) annealed at 750 deg. C with the concentration of 0.3 M exhibits the best structural and optical properties.

  17. Structural and electronic characterization of graphene grown by chemical vapor deposition and transferred onto sapphire

    International Nuclear Information System (INIS)

    Joucken, Frédéric; Colomer, Jean-François; Sporken, Robert; Reckinger, Nicolas

    2016-01-01

    Highlights: • CVD graphene is transferred onto sapphire. • Transport measurements reveal relatively low charge carriers mobility. • Scanning probe microscopy experiments reveal the presence of robust contaminant layers between the graphene and the sapphire, responsible for the low carriers mobility. - Abstract: We present a combination of magnetotransport and local probe measurements on graphene grown by chemical vapor deposition on copper foil and subsequently transferred onto a sapphire substrate. A rather strong p-doping is observed (∼9 × 10 12 cm −2 ) together with quite low carrier mobility (∼1350 cm 2 /V s). Atomic force and tunneling imaging performed on the transport devices reveals the presence of contaminants between sapphire and graphene, explaining the limited performance of our devices. The transferred graphene displays ridges similar to those observed whilst graphene is still on the copper foil. We show that, on sapphire, these ridges are made of different thicknesses of the contamination layer and that, contrary to what was reported for hBN or certain transition metal dichalcogenides, no self-cleansing process of the sapphire substrate is observed.

  18. Structural characterization of bulk GaN crystals grown under high hydrostatic pressure

    Science.gov (United States)

    Liliental-Weber, Zuzanna; Kisielowski, C.; Ruvimov, S.; Chen, Y.; Washburn, J.; Grzegory, I.; Bockowski, M.; Jun, J.; Porowski, S.

    1996-09-01

    This paper describes TEM characterization of bulk GaN crystals grown at 1500-1800Kin the form of plates from a solution of atomic nitrogen in liquid gallium under high nitrogen pressure (up to 20 kbars). The x-ray rocking curves for these crystals were in the range of 20-30 arc-sec. The plate thickness along the c axis was about 100 times smaller than the nonpolar growth directions. A substantial difference in material quality was observed on the opposite sides of the plates normal to the c direction. On one side the surface was atomically flat, while on the other side the surface was rough, with pyramidal features up to 100 nm high. The polarity of the crystals was determined using convergent-beam electron diffraction. The results showed that, regarding the long bond between Ga and N along the c-axis, Ga atoms were found to be closer to the flat side of the crystal, while N atoms were found to be closer to the rough side. Near the rough side, within 1/10 to 1/4 of the plate thickness, there was a high density of planar defects (stacking faults and dislocation loops decorated by Ga/void precipitates). A model explaining the defect formation is proposed.

  19. Structural and optical properties of pentacene films grown on differently oriented ZnO surfaces

    International Nuclear Information System (INIS)

    El Helou, M; Lietke, E; Helzel, J; Heimbrodt, W; Witte, G

    2012-01-01

    Pentacene films have been grown on two polar zinc oxide surfaces, i.e., ZnO(0001) and ZnO(0 0 0 1-bar ), as well as on the mixed-terminated ZnO(1 0 1-bar 0) and are characterized by means of atomic force microscopy (AFM), x-ray diffraction (XRD), and thermal desorption spectroscopy (TDS). In all cases, pentacene aggregates in an upright orientation without any evidence for the formation of an interface stabilized wetting layer. Additional films deposited on a highly-defective, oxygen-depleted ZnO(0 0 0 1-bar ) reveal no altered growth mode. Nearly identical optical absorption spectra have been measured for all films, thus corroborating a weak molecule-substrate interaction. Upon cooling, however, a slightly different relaxation behavior could be resolved for pentacene films on polar ZnO surfaces compared to pentacene on the mixed-terminated ZnO(1 0 1-bar 0) surface.

  20. Apocrustacyanin C(1) crystals grown in space and on earth using vapour-diffusion geometry: protein structure refinements and electron-density map comparisons.

    Science.gov (United States)

    Habash, Jarjis; Boggon, Titus J; Raftery, James; Chayen, Naomi E; Zagalsky, Peter F; Helliwell, John R

    2003-07-01

    Models of apocrustacyanin C(1) were refined against X-ray data recorded on Bending Magnet 14 at the ESRF to resolutions of 1.85 and 2 A from a space-grown and an earth-grown crystal, respectively, both using vapour-diffusion crystal-growth geometry. The space crystals were grown in the APCF on the NASA Space Shuttle. The microgravity crystal growth showed a cyclic nature attributed to Marangoni convection, thus reducing the benefits of the microgravity environment, as reported previously [Chayen et al. (1996), Q. Rev. Biophys. 29, 227-278]. A subsequent mosaicity evaluation, also reported previously, showed only a partial improvement in the space-grown crystals over the earth-grown crystals [Snell et al. (1997), Acta Cryst. D53, 231-239], contrary to the case for lysozyme crystals grown in space with liquid-liquid diffusion, i.e. without any major motion during growth [Snell et al. (1995), Acta Cryst. D52, 1099-1102]. In this paper, apocrustacyanin C(1) electron-density maps from the two refined models are now compared. It is concluded that the electron-density maps of the protein and the bound waters are found to be better overall for the structures of apocrustacyanin C(1) studied from the space-grown crystal compared with those from the earth-grown crystal, even though both crystals were grown using vapour-diffusion crystal-growth geometry. The improved residues are on the surface of the protein, with two involved in or nearby crystal lattice-forming interactions, thus linking an improved crystal-growth mechanism to the molecular level. The structural comparison procedures developed should themselves be valuable for evaluating crystal-growth procedures in the future.

  1. New Three-Dimensional Porous Electrode Concept: Vertically-Aligned Carbon Nanotubes Directly Grown on Embroidered Copper Structures

    Directory of Open Access Journals (Sweden)

    Noemí Aguiló-Aguayo

    2017-12-01

    Full Text Available New three-dimensional (3D porous electrode concepts are required to overcome limitations in Li-ion batteries in terms of morphology (e.g., shapes, dimensions, mechanical stability (e.g., flexibility, high electroactive mass loadings, and electrochemical performance (e.g., low volumetric energy densities and rate capabilities. Here a new electrode concept is introduced based on the direct growth of vertically-aligned carbon nanotubes (VA-CNTs on embroidered Cu current collectors. The direct growth of VA-CNTs was achieved by plasma-enhanced chemical vapor deposition (PECVD, and there was no application of any post-treatment or cleaning procedure. The electrochemical behavior of the as-grown VA-CNTs was analyzed by charge/discharge cycles at different specific currents and with electrochemical impedance spectroscopy (EIS measurements. The results were compared with values found in the literature. The as-grown VA-CNTs exhibit higher specific capacities than graphite and pristine VA-CNTs found in the literature. This together with the possibilities that the Cu embroidered structures offer in terms of specific surface area, total surface area, and designs provide a breakthrough in new 3D electrode concepts.

  2. New Three-Dimensional Porous Electrode Concept: Vertically-Aligned Carbon Nanotubes Directly Grown on Embroidered Copper Structures.

    Science.gov (United States)

    Aguiló-Aguayo, Noemí; Amade, Roger; Hussain, Shahzad; Bertran, Enric; Bechtold, Thomas

    2017-12-11

    New three-dimensional (3D) porous electrode concepts are required to overcome limitations in Li-ion batteries in terms of morphology (e.g., shapes, dimensions), mechanical stability (e.g., flexibility, high electroactive mass loadings), and electrochemical performance (e.g., low volumetric energy densities and rate capabilities). Here a new electrode concept is introduced based on the direct growth of vertically-aligned carbon nanotubes (VA-CNTs) on embroidered Cu current collectors. The direct growth of VA-CNTs was achieved by plasma-enhanced chemical vapor deposition (PECVD), and there was no application of any post-treatment or cleaning procedure. The electrochemical behavior of the as-grown VA-CNTs was analyzed by charge/discharge cycles at different specific currents and with electrochemical impedance spectroscopy (EIS) measurements. The results were compared with values found in the literature. The as-grown VA-CNTs exhibit higher specific capacities than graphite and pristine VA-CNTs found in the literature. This together with the possibilities that the Cu embroidered structures offer in terms of specific surface area, total surface area, and designs provide a breakthrough in new 3D electrode concepts.

  3. Annealing Effect on the Structural and Optical Properties of Sputter-Grown Bismuth Titanium Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    José E. Alfonso

    2014-04-01

    Full Text Available The aim of this work is to assess the evolution of the structural and optical properties of BixTiyOz films grown by rf magnetron sputtering upon post-deposition annealing treatments in order to obtain good quality films with large grain size, low defect density and high refractive index similar to that of single crystals. Films with thickness in the range of 220–250 nm have been successfully grown. After annealing treatment at 600 °C the films show excellent transparency and full crystallization. It is shown that to achieve larger crystallite sizes, up to 17 nm, it is better to carry the annealing under dry air than under oxygen atmosphere, probably because the nucleation rate is reduced. The refractive index of the films is similar under both atmospheres and it is very high (n =2.5 at 589 nm. However it is still slightly lower than that of the single crystal value due to the polycrystalline morphology of the thin films.

  4. Structural, morphological and mechanical properties of niobium nitride thin films grown by ion and electron beams emanated from plasma

    Science.gov (United States)

    Siddiqui, Jamil; Hussain, Tousif; Ahmad, Riaz; Umar, Zeeshan A.; Abdus Samad, Ubair

    2016-05-01

    The influence of variation in plasma deposition parameters on the structural, morphological and mechanical characteristics of the niobium nitride films grown by plasma-emanated ion and electron beams are investigated. Crystallographic investigation made by X-ray diffractometer shows that the film synthesized at 10 cm axial distance with 15 plasma focus shots (PFS) exhibits better crystallinity when compared to the other deposition conditions. Morphological analysis made by scanning electron microscope reveals a definite granular pattern composed of homogeneously distributed nano-spheroids grown as clustered particles for the film synthesized at 10 cm axial distance for 15 PFS. Roughness analysis demonstrates higher rms roughness for the films synthesized at shorter axial distance and by greater number of PFS. Maximum niobium atomic percentage (35.8) and maximum average hardness (19.4 ± 0.4 GPa) characterized by energy-dispersive spectroscopy and nano-hardness analyzer respectively are observed for film synthesized at 10 cm axial distance with 15 PFS.

  5. Surface electronic and structural properties of nanostructured titanium oxide grown by pulsed laser deposition

    NARCIS (Netherlands)

    Fusi, M.; Maccallini, E.; Caruso, T.; Casari, C. S.; Bassi, A. Li; Bottani, C. E.; Rudolf, P.; Prince, K. C.; Agostino, R. G.

    Titanium oxide nanostructured thin films synthesized by pulsed laser deposition (PLD) were here characterized with a multi-technique approach to investigate the relation between surface electronic, structural and morphological properties. Depending on the growth parameters, these films present

  6. Photoluminescence study of ZnO structures grown by aqueous chemical growth

    International Nuclear Information System (INIS)

    Kenanakis, G.; Androulidaki, M.; Vernardou, D.; Katsarakis, N.; Koudoumas, E.

    2011-01-01

    ZnO micro-structures were deposited by aqueous chemical growth on Si (100) substrates, their morphology and size depending on the growth period. Characterization of the structures was performed using X-ray diffraction, scanning electron microscopy and Raman spectroscopy. Photoluminescence spectra recorded at 18 and 295 K for 325 nm CW excitation indicated that these are strongly affected by the morphology of the structures. Rods and tubes emit stronger UV radiation, in contrast to stronger yellow-green emission observed for flower-like structures. A red shift of the UV emission was found for increasing input power, while, thermal annealing of the samples induced stimulated emission for quite high excitation intensities.

  7. Analysis of Side-Wall Structure of Grown-in Twin-Type Octahedral Defects in Czochralski Silicon

    Science.gov (United States)

    Ueki, Takemi; Itsumi, Manabu; Takeda, Tadao

    1998-04-01

    We analyzed the side-wall structure of grown-in octahedral defects in Czochralski silicon standard wafers for large-scale integrated circuits. There are two types of twin octahedral defects: an overlapping type and an adjacent type. In the twin octahedral defects of the overlapping type, a hole is formed in the connection part. The side-wall layer in the hole part is formed continually and is the same thickness as the side-wall layers of both octahedrons. In the twin octahedral defects of the adjacent type, a partition layer is formed in the connection part. Our electron energy-loss spectroscopy analyses identified that the side-wall layer includes SiO2.

  8. Structural and electronic properties of InN nanowire network grown by vapor-liquid-solid method

    Directory of Open Access Journals (Sweden)

    B. K. Barick

    2015-05-01

    Full Text Available Growth of InN nanowires have been carried out on quartz substrates at different temperatures by vapor-liquid-solid (VLS technique using different thicknesses of Au catalyst layer. It has been found that a narrow window of Au layer thickness and growth temperature leads to multi-nucleation, in which each site acts as the origin of several nanowires. In this multi-nucleation regime, several tens of micrometer long wires with diameter as small as 20 nm are found to grow along [ 11 2 ̄ 0 ] direction (a-plane to form a dense network. Structural and electronic properties of these wires are studied. As grown nanowires show degenerate n-type behavior. Furthermore, x-ray photoemission study reveals an accumulation of electrons on the surface of these nanowires. Interestingly, the wire network shows persistence of photoconductivity for several hours after switching off the photoexcitation.

  9. Structural and electronic properties of InN nanowire network grown by vapor-liquid-solid method

    Science.gov (United States)

    Barick, B. K.; Rodríguez-Fernández, Carlos; Cantarero, Andres; Dhar, S.

    2015-05-01

    Growth of InN nanowires have been carried out on quartz substrates at different temperatures by vapor-liquid-solid (VLS) technique using different thicknesses of Au catalyst layer. It has been found that a narrow window of Au layer thickness and growth temperature leads to multi-nucleation, in which each site acts as the origin of several nanowires. In this multi-nucleation regime, several tens of micrometer long wires with diameter as small as 20 nm are found to grow along [ 11 2 ¯ 0 ] direction (a-plane) to form a dense network. Structural and electronic properties of these wires are studied. As grown nanowires show degenerate n-type behavior. Furthermore, x-ray photoemission study reveals an accumulation of electrons on the surface of these nanowires. Interestingly, the wire network shows persistence of photoconductivity for several hours after switching off the photoexcitation.

  10. Structural and electronic properties of InN nanowire network grown by vapor-liquid-solid method

    Energy Technology Data Exchange (ETDEWEB)

    Barick, B. K., E-mail: bkbarick@gmail.com, E-mail: subho-dh@yahoo.co.in; Dhar, S., E-mail: bkbarick@gmail.com, E-mail: subho-dh@yahoo.co.in [Department of Physics, Indian Institute of Technology, Bombay, Mumbai-400076 (India); Rodríguez-Fernández, Carlos; Cantarero, Andres [Materials Science Institute, University of Valencia, PO Box 22085, 46071 Valencia (Spain)

    2015-05-15

    Growth of InN nanowires have been carried out on quartz substrates at different temperatures by vapor-liquid-solid (VLS) technique using different thicknesses of Au catalyst layer. It has been found that a narrow window of Au layer thickness and growth temperature leads to multi-nucleation, in which each site acts as the origin of several nanowires. In this multi-nucleation regime, several tens of micrometer long wires with diameter as small as 20 nm are found to grow along [112{sup -}0] direction (a-plane) to form a dense network. Structural and electronic properties of these wires are studied. As grown nanowires show degenerate n-type behavior. Furthermore, x-ray photoemission study reveals an accumulation of electrons on the surface of these nanowires. Interestingly, the wire network shows persistence of photoconductivity for several hours after switching off the photoexcitation.

  11. Chemical composition of dome-shaped structures grown on titanium by multi-pulse Nd:YAG laser irradiation

    International Nuclear Information System (INIS)

    Gyoergy, E.; Perez del Pino, A.; Serra, P.; Morenza, J.L.

    2004-01-01

    The specific dome-shaped structures were grown by multi-pulse Nd:YAG (λ=1.064 μm, τ=∼300 ns, and ν=30 kHz) laser irradiation of titanium targets in air at atmospheric pressure. The laser intensity values were chosen below the single-laser-pulse melting threshold of titanium. The chemical composition of the structures was studied as a function of laser pulse number as well as laser intensity, both at the outer surface layer and in depth. Micro-Raman spectroscopy, Auger electron spectroscopy (AES), and wavelength dispersive X-ray spectroscopy (WDX) were used as diagnostic techniques. Morphological investigations were performed by scanning electron microscopy. The obtained results revealed a lower oxygen concentration in the centre of the structures as compared to the borders and a lower concentration on the surface than in the depth. Moreover, it was found that the stoichiometry of the formed TiO 2-x oxides increases from the structures centre towards the border and from the surface towards the depth

  12. Properties of MIS structures based on graded-gap HgCdTe grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Voitsekhovskii, A. V.; Nesmelov, S. N.; Dzyadookh, S. M.; Varavin, V. S.; Dvoretskii, S. A.; Mikhailov, N. N.; Sidorov, Yu. G.; Vasiliev, V. V.

    2008-01-01

    The effect of near-surface graded-gap layers on the electrical characteristics of MIS structures fabricated based on heteroepitaxial Hg 1-x Cd x Te films grown by molecular beam epitaxy with a two-layer SiO 2 /Si 3 N 4 insulator and anodic oxide film is studied experimentally. It is shown that a larger modulation of capacitance (depth and width of the valley) is observed compared with the structures without the graded-gap layer. The field dependences of photovoltage of MIS structures with the graded-gap layers had a classical form and were characterized by a drop only in the enrichment region. For the structures without the graded-gap layer with x = 0.22, a drop in the voltage dependence of the photocurrent is observed in the region of pronounced inversion. This drop is governed by limitation of the space charge region by processes of tunneling generation via deep levels. The properties of the HgCdTe-insulator interfaces are studied.

  13. Evaluation of defect density by top-view large scale AFM on metamorphic structures grown by MOVPE

    Energy Technology Data Exchange (ETDEWEB)

    Gocalinska, Agnieszka, E-mail: agnieszka.gocalinska@tyndall.ie; Manganaro, Marina; Dimastrodonato, Valeria; Pelucchi, Emanuele

    2015-09-15

    Highlights: • Metamorphic buffer layers of In{sub x}Ga{sub 1−x}As were grown by MOVPE and characterised by AFM and TEM. • It was found that AFM provides sufficient information to estimate threading defect density in metamorphic structures, even when significant roughness is present. • When planar-view TEM is lacking, a combination of cross-sectional TEM and large scale AFM can provide good evaluation of the material quality. • It is fast, cheap and non-destructive – can be very useful in development process of complicated structures, requiring multiple test growths and characterisation. - Abstract: We demonstrate an atomic force microscopy based method for estimation of defect density by identification of threading dislocations on a non-flat surface resulting from metamorphic growth. The discussed technique can be applied as an everyday evaluation tool for the quality of epitaxial structures and allow for cost reduction, as it lessens the amount of the transmission electron microscopy analysis required at the early stages of projects. Metamorphic structures with low surface defectivities (below 10{sup 6}) were developed successfully with the application of the technique, proving its usefulness in process optimisation.

  14. Study of the Morphological, Structural and Photoelectrochemical Properties of TiO{sub 2} Nanorods grown by Hydrothermal Method

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Hayoung; Ryu, Hyukhyun [Inje University, Gimhae (Korea, Republic of); Lee, Won-Jae [Dong-Eui University, Busan (Korea, Republic of)

    2017-01-15

    We investigated the effects of growth duration on the morphological, structural, and photoelectrochemical properties of TiO{sub 2} nanorods grown on a TiO{sub 2}-buffered fluorine-doped tin oxide (FTO) substrate using the hydrothermal method. From the study, we found that the photoelectrochemical properties were mainly dependent on the nanorod length and (002) XRD peak intensity, which indicates vertical growth of the TiO{sub 2}. The morphological and structural properties of the TiO{sub 2} nanorods largely affect their photoelectrochemical properties. The photocurrent density was increased when the growth duration was increased from 1 hour to 4 hours, and then changed little above 4 hours. Consequently, the highest photocurrent density, 0.897 mA/cm{sup 2} (at 1.0 V vs. SCE), was obtained from the 8 hour-sample which had good morphological and structural properties. We used field emission scanning electron microscopy (FE-SEM) for analysis of the morphological properties, x-ray diffraction (XRD) for structural properties, and three-electrode potentiostat for photoelectrochemical properties.

  15. Electrical properties of MBE grown Si{sub 3}N{sub 4}-cubic GaN MIS structures

    Energy Technology Data Exchange (ETDEWEB)

    Zado, A.; Lischka, K.; As, D.J. [University of Paderborn, Faculty of Science, Department of Physics, Warburger Str. 100, 33098 Paderborn (Germany)

    2012-03-15

    In this work we report on the electrical characterization of non-polar cubic GaN metal-insulator-semiconductor (MIS) structures. Si{sub 3}N{sub 4} layers were deposited in-situ on top of cubic GaN grown on 3C-SiC (001) substrates. The electric characteristics of the MIS structures are measured by capacitance and admittance spectroscopy techniques. From the hysteresis in the capacitance-voltage curves and the peak height of the conductance G{sub p} -{omega} frequency curves the interface state densities are calculated. We find interface traps about 0.3 eV below the conduction band. The density of these traps is D{sub it} = 2.5x10{sup 11} cm{sup -2}eV{sup -1}. This is one order of magnitude lower than in MIS structures with a Si{sub 3}N{sub 4} insulator produced by plasma enhanced vapour deposition and two orders of magnitude lower than in MIS structures on c-GaN with SiO{sub 2} as insulator (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Crystal structure and properties of tetragonal EuAg4In8 grown by metal flux technique

    International Nuclear Information System (INIS)

    Subbarao, Udumula; Sarkar, Sumanta; Peter, Sebastian C.

    2015-01-01

    The compound EuAg 4 In 8 has been obtained as single crystals in high yield from reactions run in liquid indium. X-ray diffraction on single crystals suggests that EuAg 4 In 8 crystallizes in the CeMn 4 Al 8 structure type, tetragonal space group I4/mmm with lattice constants a=b=9.7937(2) Å and c=5.7492(2) Å. Crystal structure of EuAg 4 In 8 is composed of pseudo Frank–Kasper cages occupied by one europium atom in each ring, which are shared through the corner along the ab plane resulting in a three dimensional network. The magnetic susceptibility of EuAg 4 In 8 was measured in the temperature range 2–300 K, which obeyed Curie–Weiss law above 50 K. Magnetic moment value calculated from the fitting indicates the presence of divalent europium, which was confirmed by X-ray absorption near edge spectroscopy. Electrical resistivity measurements suggest that EuAg 4 In 8 is metallic in nature with a probable Fermi liquid behavior at low temperature. - Graphical abstract: The tetragonal EuAg 4 In 8 has been grown as single crystals from reactions run in liquid indium. Magnetic and XANES measurements suggest divalent nature of Eu and resistivity measurements suggest metallic nature. - Highlights: • EuAg 4 In 8 phase having tetragonal phase is grown by metal flux technique. • Magnetic and XANES measurements exhibit divalent nature of Eu in EuAg 4 In 8 . • Resistivity measurement suggests metallic nature and probable Fermi liquid behavior

  17. Magnetic and structural properties of Co{sub 2}FeAl thin films grown on Si substrate

    Energy Technology Data Exchange (ETDEWEB)

    Belmeguenai, Mohamed, E-mail: belmeguenai.mohamed@univ-paris13.fr [LSPM (CNRS-UPR 3407) 99 Avenue Jean-Baptiste Clément Université Paris 13, 93430 Villetaneuse (France); Tuzcuoglu, Hanife [LSPM (CNRS-UPR 3407) 99 Avenue Jean-Baptiste Clément Université Paris 13, 93430 Villetaneuse (France); Gabor, Mihai; Petrisor, Traian [Center for Superconductivity, Spintronics and Surface Science, Technical University of Cluj-Napoca, Street Memorandumului No. 28, RO-400114 Cluj-Napoca (Romania); Tiusan, Coriolan [Center for Superconductivity, Spintronics and Surface Science, Technical University of Cluj-Napoca, Street Memorandumului No. 28, RO-400114 Cluj-Napoca (Romania); Institut Jean Lamour, CNRS, Université de Nancy, BP 70239, F-54506 Vandoeuvre (France); Berling, Dominique [IS2M (CNRS-LRC 7228), 15 rue Jean Starcky, Université de Haute-Alsace, BP 2488, 68057 Mulhouse-Cedex (France); Zighem, Fatih; Mourad Chérif, Salim [LSPM (CNRS-UPR 3407) 99 Avenue Jean-Baptiste Clément Université Paris 13, 93430 Villetaneuse (France)

    2015-01-01

    The correlation between magnetic and structural properties of Co{sub 2}FeAl (CFA) thin films of different thicknesses (10 nmgrown at room temperature on MgO-buffered Si/SiO{sub 2} substrates and annealed at 600 °C has been studied. x-ray diffraction (XRD) measurements revealed an (011) out-of-plane textured growth of the films. The deduced lattice parameter increases with the film thickness. Moreover, pole figures showed no in-plane preferential growth orientation. The magneto-optical Kerr effect hysteresis loops showed the presence of a weak in-plane uniaxial anisotropy with a random easy axis direction. The coercive field, measured with the applied field along the easy axis direction, and the uniaxial anisotropy field increase linearly with the inverse of the CFA thickness. The microstrip line ferromagnetic resonance measurements for in-plane and perpendicular applied magnetic fields revealed that the effective magnetization and the uniaxial in-plane anisotropy field follow a linear variation versus the inverse CFA thickness. This allows deriving a perpendicular surface anisotropy coefficient of −1.86 erg/cm{sup 2}. - Highlights: • Various Co{sub 2}FeAl thin films were grown on a Si(001) substrates and annealed at 600 °C. • The thickness dependence of magnetic and structural properties has been studied. • X-ray measurements revealed an (011) out-of-plane textured growth of the films. • The easy axis coercive field varies linearly with the inverse CFA thickness. • The effective magnetization increases linearly with the inverse film thickness.

  18. Effects of growth duration on the structural and optical properties of ZnO nanorods grown on seed-layer ZnO/polyethylene terephthalate substrates

    Energy Technology Data Exchange (ETDEWEB)

    Jeong, Y.I.; Shin, C.M.; Heo, J.H. [Department of Nano Systems Engineering, Center for Nano Manufacturing Inje University, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Ryu, H., E-mail: hhryu@inje.ac.kr [Department of Nano Systems Engineering, Center for Nano Manufacturing Inje University, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Lee, W.J. [Department of Nano Engineering, Dong-Eui University, Busan 614-714 (Korea, Republic of); Chang, J.H. [Major of Nano Semiconductor, Korea Maritime University, Busan 606-791 (Korea, Republic of); Son, C.S. [Department of Electronic Materials Engineering, Silla University, Busan 617-736 (Korea, Republic of); Yun, J. [Department of Nano Science and Engineering, Institute of Advanced Materials Kyungnam University, Changwon, Gyeongnam 631-701 (Korea, Republic of)

    2011-10-01

    Well-aligned single crystalline zinc oxide (ZnO) nanorods were successfully grown, by hydrothermal synthesis at a low temperature, on flexible polyethylene terephthalate (PET) substrates with a seed layer. Photoluminescence (PL), field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM) measurements were used to analyze the optical and structural properties of ZnO nanorods grown for various durations from 0.5 h to 10 h. Regular and well-aligned ZnO nanorods with diameters ranging from 62 nm to 127 nm and lengths from 0.3 {mu}m to 1.65 {mu}m were formed after almost 5 h of growth. The growth rate of ZnO grown on PET substrates is lower than that grown on Si (1 0 0) substrates. Enlarged TEM images show that the tips of the ZnO nanorods grown for 6 h have a round shape, whereas the tips grown for 10 h are sharpened. The crystal properties of ZnO nanorods can be tuned by using the growth duration as a growth condition. The XRD and PL results indicate that the structural and optical properties of the ZnO nanorods are most improved after 5 h and 6 h of growth, respectively.

  19. Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures.

    Science.gov (United States)

    Wang, Wenliang; Yang, Weijia; Lin, Yunhao; Zhou, Shizhong; Li, Guoqiang

    2015-11-13

    2 inch-diameter GaN films with homogeneous thickness distribution have been grown on AlN/Si(111) hetero-structures by pulsed laser deposition (PLD) with laser rastering technique. The surface morphology, crystalline quality, and interfacial property of as-grown GaN films are characterized in detail. By optimizing the laser rastering program, the ~300 nm-thick GaN films grown at 750 °C show a root-mean-square (RMS) thickness inhomogeneity of 3.0%, very smooth surface with a RMS surface roughness of 3.0 nm, full-width at half-maximums (FWHMs) for GaN(0002) and GaN(102) X-ray rocking curves of 0.7° and 0.8°, respectively, and sharp and abrupt AlN/GaN hetero-interfaces. With the increase in the growth temperature from 550 to 850 °C, the surface morphology, crystalline quality, and interfacial property of as-grown ~300 nm-thick GaN films are gradually improved at first and then decreased. Based on the characterizations, the corresponding growth mechanisms of GaN films grown on AlN/Si hetero-structures by PLD with various growth temperatures are hence proposed. This work would be beneficial to understanding the further insight of the GaN films grown on Si(111) substrates by PLD for the application of GaN-based devices.

  20. Structural and electronic properties of polar MnO ultrathin film grown on Ag(111)

    Energy Technology Data Exchange (ETDEWEB)

    Kundu, Asish K., E-mail: asish.kundu@saha.ac.in; Menon, Krishnakumar S. R. [Surface Physics and Material Science Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 70064 (India)

    2016-05-23

    Surface electronic structure of ultrathin polar MnO film was studied by Low-energy Electron Diffraction (LEED) and Photoemission Spectroscopic (PES) techniques. Epitaxial monolayer to facet formation with increasing film thickness has been observed by LEED. Our LEED result shows p(2x2) surface reconstruction along with facet formation, stabilize the polar MnO(111) surface. The core levels and the valence band electronic structure of MnO films have been studied as a function of film thickness using X-ray and ultraviolet photoelectron spectroscopy techniques.

  1. Optical and micro-structural characterizations of MBE grown indium gallium nitride polar quantum dots

    KAUST Repository

    Elafandy, Rami T.

    2011-12-01

    Comparison between indium rich (27%) InGaN/GaN quantum dots (QDs) and their underlying wetting layer (WL) is performed by means of optical and structural characterizations. With increasing temperature, micro-photoluminescence (μPL) study reveals the superior ability of QDs to prevent carrier thermalization to nearby traps compared to the two dimensional WL. Thus, explaining the higher internal quantum efficiency of the QD nanostructure compared to the higher dimensional WL. Structural characterization (X-ray diffraction (XRD)) and transmission electron microscopy (TEM)) reveal an increase in the QD indium content over the WL indium content which is due to strain induced drifts. © 2011 IEEE.

  2. Nanostructured PLD-grown gadolinia doped ceria: Chemical and structural characterization by transmission electron microscopy techniques

    DEFF Research Database (Denmark)

    Rodrigo, Katarzyna Agnieszka; Wang, Hsiang-Jen; Heiroth, Sebastian

    2011-01-01

    The morphology as well as the spatially resolved elemental and chemical characterization of 10 mol% gadolinia doped ceria (CGO10) structures prepared by pulsed laser deposition (PLD) technique are investigated by scanning transmission electron microscopy accompanied with electron energy loss spec......, indicate apparent variation of the ceria valence state across and along the film. No element segregation to the grain boundaries is detected. These results are discussed in the context of solid oxide fuel cell applications.......The morphology as well as the spatially resolved elemental and chemical characterization of 10 mol% gadolinia doped ceria (CGO10) structures prepared by pulsed laser deposition (PLD) technique are investigated by scanning transmission electron microscopy accompanied with electron energy loss...... spectroscopy and energy dispersive X-ray spectroscopy. A dense, columnar and structurally inhomogeneous CGO10 film, i.e. exhibiting grain size refinement across the film thickness, is obtained in the deposition process. The cerium M4,5 edges, used to monitor the local electronic structure of the grains...

  3. Structural characterization of oxidized allotaxially grown CoSi2 layers by x-ray scattering

    International Nuclear Information System (INIS)

    Kaendler, I. D.; Seeck, O. H.; Schlomka, J.-P.; Tolan, M.; Press, W.; Stettner, J.; Kappius, L.; Dieker, C.; Mantl, S.

    2000-01-01

    A series of buried CoSi 2 layers prepared by a modified molecular beam epitaxy process (allotaxy) and a subsequent wet-oxidation process was investigated by x-ray scattering. The oxidation time which determines the depth in which the CoSi 2 layers are located within the Si substrates has been varied during the preparation. The electron density profiles and the structure of the interfaces were extracted from specular reflectivity and diffuse scattering measurements. Crystal truncation rod investigations yielded the structure on an atomic level (crystalline quality). It turns out that the roughness of the CoSi 2 layers increases drastically with increasing oxidation time, i.e., with increasing depth of the buried layers. Furthermore, the x-ray data reveal that the oxidation growth process is diffusion limited. (c) 2000 American Institute of Physics

  4. Structural transformations in MoOx thin films grown by pulsed laser deposition

    International Nuclear Information System (INIS)

    Camacho-Lopez, M.A.; Haro-Poniatowski, E.; Escobar-Alarcon, L.

    2004-01-01

    In this work, laser-induced crystallization in MoO x thin films (1.8≤x≤2.1) is reported. This transformation involves a MoO x oxidation and subsequently a crystallization process from amorphous MoO 3 to crystalline αMoO 3 . For comparison purposes crystallization is induced thermally, in an oven, as well. The crystallization kinetics is monitored by Raman spectroscopy; a threshold in the energy density necessary to induce the phase transformation is determined in the case of photo-crystallization. This threshold depends on the type of substrate on which the film is deposited. For the thin films deposited on glass substrates, the structural transformation is from amorphous MoO x to the thermodynamically stable αMoO 3 crystalline phase. For the thin films deposited on Si(100) the structural transformation is from amorphous MoO x to a mixture of αMoO 3 and the thermodynamically unstable βMoO 3 crystalline phases. The structural transformations are also characterized by scanning electron microscopy and light-transmission experiments. (orig.)

  5. Structural transformations in MoO{sub x} thin films grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Camacho-Lopez, M.A.; Haro-Poniatowski, E. [Departamento de Fisica, Laboratorio de Optica Cuantica, Universidad Autonoma Metropolitana Iztapalapa, Apdo. Postal 55-534, 09340, Mexico D. F. (Mexico); Escobar-Alarcon, L. [Departamento de Fisica, Instituto Nacional de Investigaciones Nucleares, Apdo. Postal 18-1027, 11801, Mexico D. F. (Mexico)

    2004-01-01

    In this work, laser-induced crystallization in MoO{sub x} thin films (1.8{<=}x{<=}2.1) is reported. This transformation involves a MoO{sub x} oxidation and subsequently a crystallization process from amorphous MoO{sub 3} to crystalline {alpha}MoO{sub 3}. For comparison purposes crystallization is induced thermally, in an oven, as well. The crystallization kinetics is monitored by Raman spectroscopy; a threshold in the energy density necessary to induce the phase transformation is determined in the case of photo-crystallization. This threshold depends on the type of substrate on which the film is deposited. For the thin films deposited on glass substrates, the structural transformation is from amorphous MoO{sub x} to the thermodynamically stable {alpha}MoO{sub 3} crystalline phase. For the thin films deposited on Si(100) the structural transformation is from amorphous MoO{sub x} to a mixture of {alpha}MoO{sub 3} and the thermodynamically unstable {beta}MoO{sub 3} crystalline phases. The structural transformations are also characterized by scanning electron microscopy and light-transmission experiments. (orig.)

  6. Structural investigations of silicon nanostructures grown by self-organized island formation for photovoltaic applications

    Energy Technology Data Exchange (ETDEWEB)

    Roczen, Maurizio; Malguth, Enno; Barthel, Thomas; Gref, Orman; Toefflinger, Jan A.; Schoepke, Andreas; Schmidt, Manfred; Ruske, Florian; Korte, Lars; Rech, Bernd [Institute for Silicon Photovoltaics, Helmholtz-Zentrum Berlin, Berlin (Germany); Schade, Martin; Leipner, Hartmut S. [Martin-Luther-Universitaet Halle-Wittenberg, Interdisziplinaeres Zentrum fuer Materialwissenschaften, Halle (Germany); Callsen, Gordon; Hoffmann, Axel [Technische Universitaet Berlin, Institut fuer Festkoerperphysik, Berlin (Germany); Phillips, Matthew R. [University of Technology Sydney, Department of Physics and Advanced Materials, NSW (Australia)

    2012-09-15

    The self-organized growth of crystalline silicon nanodots and their structural characteristics are investigated. For the nanodot synthesis, thin amorphous silicon (a-Si) layers with different thicknesses have been deposited onto the ultrathin (2 nm) oxidized (111) surface of Si wafers by electron beam evaporation under ultrahigh vacuum conditions. The solid phase crystallization of the initial layer is induced by a subsequent in situ annealing step at 700 C, which leads to the dewetting of the initial a-Si layer. This process results in the self-organized formation of highly crystalline Si nanodot islands. Scanning electron microscopy confirms that size, shape, and planar distribution of the nanodots depend on the thickness of the initial a-Si layer. Cross-sectional investigations reveal a single-crystalline structure of the nanodots. This characteristic is observed as long as the thickness of the initial a-Si layer remains under a certain threshold triggering coalescence. The underlying ultra-thin oxide is not structurally affected by the dewetting process. Furthermore, a method for the fabrication of close-packed stacks of nanodots is presented, in which each nanodot is covered by a 2 nm thick SiO{sub 2} shell. The chemical composition of these ensembles exhibits an abrupt Si/SiO{sub 2} interface with a low amount of suboxides. A minority charge carrier lifetime of 18 {mu}s inside of the nanodots is determined. (orig.)

  7. Preparation, Structural and Dielectric Properties of Solution Grown Polyvinyl Alcohol(PVA) Film

    Science.gov (United States)

    Nangia, Rakhi; Shukla, Neeraj K.; Sharma, Ambika

    2017-08-01

    Flexible dielectrics with high permittivity have been investigated extensively due to their applications in electronic industry. In this work, structural and electrical characteristics of polymer based film have been analysed. Poly vinyl alcohol (PVA) film was prepared by solution casting method. X-ray diffraction (XRD) characterization technique is used to investigate the structural properties. The semi-crystalline nature has been determined by the analysis of the obtained XRD pattern. Electrical properties of the synthesized film have been analysed from the C-V and I-V curves obtained at various frequencies and temperatures. Low conductivity values confirm the insulating behaviour of the film. However, it is found that conductivity increases with temperature. Also, the dielectric permittivity is found to be higher at lower frequencies and higher temperatures, that proves PVA to be an excellent dielectric material which can be used in interface electronics. Dielectric behaviour of the film has been explained based on dipole orientations to slow and fast varying electric field. However further engineering can be done to modulate the structural, electrical properties of the film.

  8. Photoluminescence and structural properties of unintentional single and double InGaSb/GaSb quantum wells grown by MOVPE

    Science.gov (United States)

    Ahia, Chinedu Christian; Tile, Ngcali; Botha, Johannes R.; Olivier, E. J.

    2018-04-01

    The structural and photoluminescence (PL) characterization of InGaSb quantum well (QW) structures grown on GaSb substrate (100) using atmospheric pressure Metalorganic Vapor Phase Epitaxy (MOVPE) is presented. Both structures (single and double-InGaSb QWs) were inadvertently formed during an attempt to grow capped InSb/GaSb quantum dots (QDs). In this work, 10 K PL peak energies at 735 meV and 740 meV are suggested to be emissions from the single and double QWs, respectively. These lines exhibit red shifts, accompanied by a reduction in their full-widths at half-maximum (FWHM) as the excitation power decreases. The presence of a GaSb spacer in the double QW was found to increase the strength of the PL emission, which consequently gives rise to a reduced blue-shift and broadening of the PL emission line observed for the double QW with an increase in laser power, while the low thermal activation energy for the quenching of the PL from the double QW is attributed to the existence of threading dislocations, as seen in the bright field TEM image for this sample.

  9. Surface termination structure of α-Ga{sub 2}O{sub 3} film grown by mist chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Tamba, Daiki; Kubo, Osamu, E-mail: okubo@eei.eng.osaka-u.ac.jp; Osaka, Shun; Takahashi, Kazuki; Tabata, Hiroshi; Katayama, Mitsuhiro [Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, Suita 565-0871 (Japan); Oda, Masaya [Photonics and Electronics Science and Engineering Center, Graduate School of Engineering, Kyoto University, Kyoto 615-8520 (Japan); FLOSFIA Inc., 1-36 Goryoohara, Kyoto 615-8245 (Japan); Kaneko, Kentaro; Fujita, Shizuo [Photonics and Electronics Science and Engineering Center, Graduate School of Engineering, Kyoto University, Kyoto 615-8520 (Japan)

    2016-06-20

    The surface structure of α-Ga{sub 2}O{sub 3}(0001) grown on an α-Al{sub 2}O{sub 3}(0001) substrate by mist chemical vapor deposition was studied by coaxial impact-collision ion scattering spectroscopy (CAICISS) and atomic force microscopy (AFM). The minimum step height observed in the AFM image was 0.21 ± 0.01 nm, coinciding with the height of three atomic layers of α-Ga{sub 2}O{sub 3}(0001). It was revealed by CAICISS analysis that the surface of α-Ga{sub 2}O{sub 3}(0001) is terminated by a Ga layer followed by an O layer, which is consistent with the surface termination of α-Al{sub 2}O{sub 3}(0001). A structural model taking surface relaxation into account was also constructed by fitting the simulated curve for the azimuth angle dependence of the Ga intensity to the experimental dependence. The resultant structural model is similar to the model of an α-Al{sub 2}O{sub 3}(0001) surface, which indicates analogous behavior in corundum crystals.

  10. Manipulation of morphology and structure of the top of GaAs nanowires grown by molecular-beam epitaxy

    Science.gov (United States)

    Li, Lixia; Pan, Dong; Yu, Xuezhe; So, Hyok; Zhao, Jianhua

    2017-10-01

    Self-catalyzed GaAs nanowires (NWs) are grown on Si (111) substrates by molecular-beam epitaxy. The effect of different closing sequences of the Ga and As cell shutters on the morphology and structural phase of GaAs NWs is investigated. For the sequences of closing the Ga and As cell shutters simultaneously or closing the As cell shutter 1 min after closing the Ga cell shutter, the NWs grow vertically to the substrate surface. In contrast, when the As cell shutter is closed first, maintaining the Ga flux is found to be critical for the following growth of GaAs NWs, which can change the growth direction from [111] to . The evolution of the morphology and structural phase transition at the tips of these GaAs NWs confirm that the triple-phase-line shift mode is at work even for the growth with different cell shutter closing sequences. Our work will provide new insights for better understanding of the growth mechanism and realizing of the morphology and structure control of the GaAs NWs. Project supported partly by the MOST of China (No. 2015CB921503), the National Natural Science Foundation of China (Nos. 61504133, 61334006, 61404127), and Youth Innovation Promotion Association, CAS (No. 2017156).

  11. Structural and optical properties of 70-keV carbon ion beam synthesized carbon nanoclusters in thermally grown silicon dioxide

    International Nuclear Information System (INIS)

    Poudel, P.R.; Poudel, P.P.; Paramo, J.A.; Strzhemechny, Y.M.; Rout, B.; McDaniel, F.D.

    2015-01-01

    The structural and optical properties of carbon nanoclusters formed in thermally grown silicon dioxide film via the ion beam synthesis process have been investigated. A low-energy (70 keV) carbon ion beam (C - ) at a fluence of 3 x 10 17 atoms/cm 2 was used for implantation into a thermally grown silicon dioxide layer (500 nm thick) on a Si (100) wafer. Several parts of the implanted samples were subsequently annealed in a gas mixture (4 % H 2 + 96 % Ar) at 900 C for different time periods. The as-implanted and annealed samples were characterized by X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy, Raman spectroscopy, transmission electron microscopy (TEM), and photoluminescence spectroscopy (PL). The carbon ion implantation depth profile was simulated using a widely used Monte Carlo-based simulation code SRIM-2012. Additionally, the elemental depth profile of the implanted carbon along with host elements of silicon and oxygen were simulated using a dynamic ion-solid interaction code T-DYN, which incorporates the effects of the surface sputtering and gradual change in the elemental composition in the implanted layers due to high-fluence ion implantation. The elemental depth profile obtained from the XPS measurements matches closely to the T-DYN predictions. Raman measurements indicate the formation of graphitic phases in the annealed samples. The graphitic peak (G-peak) was found to be increased with the annealing time duration. In the sample annealed for 10 min, the sizes of the carbon nanoclusters were found to be 1-4 nm in diameter using TEM. The PL measurements at room temperature using a 325-nm laser show broad-band emissions in the ultraviolet to visible range in the as-implanted sample. Intense narrow bands along with the broad bands were observed in the annealed samples. The defects present in the as-grown samples along with carbon ion-induced defect centers in the as-implanted samples are the main contributors to the observed

  12. Structural and optical properties of 70-keV carbon ion beam synthesized carbon nanoclusters in thermally grown silicon dioxide

    Energy Technology Data Exchange (ETDEWEB)

    Poudel, P.R. [University of North Texas, Ion Beam Modification and Analysis Laboratory, Department of Physics, Denton, TX (United States); Intel Corporation, Rio Rancho, NM (United States); Poudel, P.P. [University of Kentucky, Department of Chemistry, Lexington, KY (United States); Paramo, J.A.; Strzhemechny, Y.M. [Texas Christian University, Department of Physics and Astronomy, Fort Worth, TX (United States); Rout, B. [University of North Texas, Ion Beam Modification and Analysis Laboratory, Department of Physics, Denton, TX (United States); University of North Texas, Center for Advanced Research and Technology, Denton, TX (United States); McDaniel, F.D. [University of North Texas, Ion Beam Modification and Analysis Laboratory, Department of Physics, Denton, TX (United States)

    2014-09-18

    The structural and optical properties of carbon nanoclusters formed in thermally grown silicon dioxide film via the ion beam synthesis process have been investigated. A low-energy (70 keV) carbon ion beam (C{sup -}) at a fluence of 3 x 10{sup 17} atoms/cm{sup 2} was used for implantation into a thermally grown silicon dioxide layer (500 nm thick) on a Si (100) wafer. Several parts of the implanted samples were subsequently annealed in a gas mixture (4 % H{sub 2} + 96 % Ar) at 900 C for different time periods. The as-implanted and annealed samples were characterized by X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy, Raman spectroscopy, transmission electron microscopy (TEM), and photoluminescence spectroscopy (PL). The carbon ion implantation depth profile was simulated using a widely used Monte Carlo-based simulation code SRIM-2012. Additionally, the elemental depth profile of the implanted carbon along with host elements of silicon and oxygen were simulated using a dynamic ion-solid interaction code T-DYN, which incorporates the effects of the surface sputtering and gradual change in the elemental composition in the implanted layers due to high-fluence ion implantation. The elemental depth profile obtained from the XPS measurements matches closely to the T-DYN predictions. Raman measurements indicate the formation of graphitic phases in the annealed samples. The graphitic peak (G-peak) was found to be increased with the annealing time duration. In the sample annealed for 10 min, the sizes of the carbon nanoclusters were found to be 1-4 nm in diameter using TEM. The PL measurements at room temperature using a 325-nm laser show broad-band emissions in the ultraviolet to visible range in the as-implanted sample. Intense narrow bands along with the broad bands were observed in the annealed samples. The defects present in the as-grown samples along with carbon ion-induced defect centers in the as-implanted samples are the main

  13. Structural and optical properties of GaN thin films grown on Al2O3 substrates by MOCVD at different reactor pressures

    International Nuclear Information System (INIS)

    Guillén-Cervantes, A.; Rivera-Álvarez, Z.; López-López, M.; Ponce-Pedraza, A.; Guarneros, C.; Sánchez-Reséndiz, V.M.

    2011-01-01

    GaN thin films grown by MOCVD on (0 0 0 1) Al 2 O 3 substrates at different growth pressures were characterized by field-emission scanning electron microscopy, atomic force microscopy, micro-Raman, and photoluminescence at room temperature. It was found that there is an optimum pressure of 76 Torr at which the structural and optical properties of the GaN samples are superior. On the other hand samples grown at higher pressure exhibited hexagonal surface pits and surface spirals. The results showed that the growth pressure strongly influences the morphology, and significantly affects the structural and optical properties of the GaN epilayers.

  14. Characterization of InP/GaAs/Si structures grown by atmospheric pressure metalorganic chemical vapor deposition

    International Nuclear Information System (INIS)

    Pearton, S.J.; Short, K.T.; Macrander, A.T.; Abernathy, C.R.; Mazzi, V.P.; Haegel, N.M.; Al-Jassim, M.M.; Vernon, S.M.; Haven, V.E.

    1989-01-01

    The thickness dependence of material quality of InP-GaAs-Si structures grown by atmospheric pressure metalorganic chemical vapor deposition was investigated. The InP thickness was varied from 1--4 μm, and that of the GaAs from 0.1--4 μm. For a given thickness of InP, its ion channeling yield and x-ray peak width were essentially independent of the GaAs layer thickness. The InP x-ray peak widths were typically 400--440 arcsec for 4-μm-thick layers grown on GaAs. The GaAs x-ray widths in turn varied from 320--1000 arcsec for layer thicknesses from 0.1--4 μm. Cross-sectional transmission electron microscopy showed high defect densities at both the InP-GaAs and GaAs-Si interfaces. In 4-μm-thick InP layers the average threading dislocation density was in the range (3--8) x 10 8 cm -2 with a stacking fault density within the range (0.4--2) x 10 8 cm 2 . The He + ion channeling yield near the InP surface was similar to that of bulk InP (chi/sub min/∼4%), but rose rapidly toward the InP-GaAs heterointerface where it was typically around 50% for 1-μm-thick InP layers. All samples showed room-temperature luminescence, while at 4.4 K, exciton-related transitions, whose intensity was a function of the InP thickness, were observed

  15. Effects of tellurium concentration on the structure of melt-grown ZnSe crystals

    International Nuclear Information System (INIS)

    Atroshchenko, Lyubov V.; Galkin, Sergey N.; Rybalka, Irina A.; Voronkin, Evgeniy F.; Lalayants, Alexandr I.; Ryzhikov, Vladimir D.; Fedorov, Alexandr G.

    2005-01-01

    It has been shown that isovalent doping by tellurium positively affects the structural perfection of ZnSe crystals related to the completeness of the wurtzite-sphalerite phase transition. The optimum concentration range of tellurium in ZnSe crystals is 0.3-0.6 mass %. X-ray diffraction studies have shown that in ZnSe 1-x Te x crystals at tellurium concentrations below 0.3 mass % twinning and packing defects occur, while tellurium concentrations above 0.6 mass % lead to formation of tetragonal crystal lattice

  16. Structure and photoluminescence properties of ZnS films grown on porous Si substrates

    Science.gov (United States)

    Wang, Cai-feng; Hu, Bo; Yi, Hou-hui; Li, Wei-bing

    2011-11-01

    ZnS films were deposited on porous silicon (PS) substrates with different porosities. With the increase of PS substrate porosity, the XRD diffraction peak intensity decreases and the surface morphology of the ZnS films becomes rougher. Voids appear in the films, due to the increased roughness of PS structure. The photoluminescence (PL) spectra of the samples before and after deposition of ZnS were measured to study the effect of substrate porosity on the luminescence properties of ZnS/PS composites. As-prepared PS substrates emit strong red light. The red PL peak of PS after deposition of ZnS shows an obvious blueshift. As PS substrate porosity increases, the trend of blueshift increases. A green emission at about 550 nm was also observed when the porosity of PS increased, which is ascribed to the defect-center luminescence of ZnS. The effect of annealing time on the structural and luminescence properties of ZnS/PS composites were also studied. With the increase of annealing time, the XRD diffraction peak intensity and the self-activated luminescence intensity of ZnS increase, and, the surface morphology of the ZnS films becomes smooth and compact. However, the red emission intensity of PS decreases, which was associated with a redshift. White light emission was obtained by combining the luminescence of ZnS with the luminescence of PS.

  17. Structural change upon annealing of amorphous GeSbTe grown on Si(111)

    Energy Technology Data Exchange (ETDEWEB)

    Bragaglia, V., E-mail: bragaglia@pdi-berlin.de; Jenichen, B.; Giussani, A.; Perumal, K.; Riechert, H.; Calarco, R. [Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

    2014-08-07

    The structural change upon annealing of an amorphous GeSbTe (GST) film deposited by molecular beam epitaxy on a Si(111) substrate is studied by means of X-ray diffraction (XRD), X-ray reflectivity (XRR), and atomic force microscopy (AFM). XRD profiles reveal that both metastable cubic and stable hexagonal phases are obtained with a single out-of-plane orientation. XRR study shows a density increase and consequent thickness decrease upon annealing, in accordance with literature. From both, the XRD and the AFM study, it emerges that the crystalline substrate acts as a template for the film, favoring the crystallization of the amorphous GST into the [111] oriented metastable cubic phase, and the latter turns into the [0001] stable hexagonal phase for higher annealing temperature.

  18. Properties of Inconel 625 mesh structures grown by electron beam additive manufacturing

    International Nuclear Information System (INIS)

    List, F.A.; Dehoff, R.R.; Lowe, L.E.; Sames, W.J.

    2014-01-01

    Relationships between electron beam parameters (beam current, beam speed, and beam focus) and physical properties (mass, diameter, elastic modulus, and yield strength) have been investigated for Inconel 625 mesh cubes fabricated using an additive manufacturing technology based on electron beam melting. The elastic modulus and yield strength of the mesh cubes have been systematically varied by approximately a factor of ten by changing the electron beam parameters. Simple models have been used to understand these relationships. Structural anisotropies of the mesh associated with the layered build architecture have been observed and may contribute, along with microstructural anisotropies, to the anisotropic mechanical properties of the mesh. Knowledge of this kind is likely applicable to other metal and alloy systems and is essential to rapidly realize the full potential of this burgeoning technology

  19. Diamond-like carbon layers grown by electrochemical method-structural study

    International Nuclear Information System (INIS)

    Kulesza, S.; Szatkowski, J.; Lulinska, E.; Kozanecki, M.

    2008-01-01

    A simple method of production of diamond-like carbon (DLC) thin films on various substrates by means of electrolysis of liquid hydrocarbons under ambient conditions is described in the paper. The amount of sp 3 -hybridized carbon clusters within deposited films is a key parameter of their structural quality, and is investigated using scanning electron microscopy (SEM), and Raman spectroscopy. Obtained results indicate that although the electrolysis generally leads to granular DLC films contaminated with graphitic inclusions, providing current density larger than 520 mA cm -2 at 1700 V, sp 3 -rich microcrystals with sharp edges can be found as well. Micro-Raman spectroscopic data strongly suggest that these microcrystals are minute diamonds, which eventually opens up a new perspective for a low-temperature synthesis of diamond-related materials

  20. Thermoelectric energy conversion in layered structures with strained Ge quantum dots grown on Si surfaces

    Science.gov (United States)

    Korotchenkov, Oleg; Nadtochiy, Andriy; Kuryliuk, Vasyl; Wang, Chin-Chi; Li, Pei-Wen; Cantarero, Andres

    2014-03-01

    The efficiency of the energy conversion devices depends in many ways on the materials used and various emerging cost-effective nanomaterials have promised huge potentials in highly efficient energy conversion. Here we show that thermoelectric voltage can be enhanced by a factor of 3 using layer-cake growth of Ge quantum dots through thermal oxidation of SiGe layers stacked in SiO2/Si3N4 multilayer structure. The key to achieving this behavior has been to strain the Ge/Si interface by Ge dots migrating to Si substrate. Calculations taking into account the carrier trapping in the dot with a quantum transmission into the neighboring dot show satisfactory agreement with experiments above ≈200 K. The results may be of interest for improving the functionality of thermoelectric devices based on Ge/Si.

  1. Properties of Inconel 625 mesh structures grown by electron beam additive manufacturing

    Energy Technology Data Exchange (ETDEWEB)

    List, F.A., E-mail: listfaiii@ornl.gov [Oak Ridge National Laboratory, 1 Bethel Valley Rd., Oak Ridge, TN (United States); Dehoff, R.R.; Lowe, L.E. [Oak Ridge National Laboratory, 1 Bethel Valley Rd., Oak Ridge, TN (United States); Sames, W.J. [Texas A and M University, College Station, TX (United States)

    2014-10-06

    Relationships between electron beam parameters (beam current, beam speed, and beam focus) and physical properties (mass, diameter, elastic modulus, and yield strength) have been investigated for Inconel 625 mesh cubes fabricated using an additive manufacturing technology based on electron beam melting. The elastic modulus and yield strength of the mesh cubes have been systematically varied by approximately a factor of ten by changing the electron beam parameters. Simple models have been used to understand these relationships. Structural anisotropies of the mesh associated with the layered build architecture have been observed and may contribute, along with microstructural anisotropies, to the anisotropic mechanical properties of the mesh. Knowledge of this kind is likely applicable to other metal and alloy systems and is essential to rapidly realize the full potential of this burgeoning technology.

  2. Effect of Processing Parameters on Thickness of Columnar Structured Silicon Wafers Directly Grown from Silicon Melts

    Directory of Open Access Journals (Sweden)

    Jin-Seok Lee

    2012-01-01

    Full Text Available In order to obtain optimum growth conditions for desired thickness and more effective silicon feedstock usage, effects of processing parameters such as preheated substrate temperatures, time intervals, moving velocity of substrates, and Ar gas blowing rates on silicon ribbon thickness were investigated in the horizontal growth process. Most of the parameters strongly affected in the control of ribbon thickness with columnar grain structure depended on the solidification rate. The thickness of the silicon ribbon decreased with an increasing substrate temperature, decreasing time interval, and increasing moving velocity of the substrate. However, the blowing of Ar gas onto a liquid layer existing on the surface of solidified ribbon contributed to achieving smooth surface roughness but did not closely affect the change of ribbon thickness in the case of a blowing rate of ≥0.65 Nm3/h because the thickness of the solidified layer was already determined by the exit height of the reservoir.

  3. Effects of nitrogen incorporation in HfO(2) grown on InP by atomic layer deposition: an evolution in structural, chemical, and electrical characteristics.

    Science.gov (United States)

    Kang, Yu-Seon; Kim, Dae-Kyoung; Kang, Hang-Kyu; Jeong, Kwang-Sik; Cho, Mann-Ho; Ko, Dae-Hong; Kim, Hyoungsub; Seo, Jung-Hye; Kim, Dong-Chan

    2014-03-26

    We investigated the effects of postnitridation on the structural characteristics and interfacial reactions of HfO2 thin films grown on InP by atomic layer deposition (ALD) as a function of film thickness. By postdeposition annealing under NH3 vapor (PDN) at 600 °C, an InN layer formed at the HfO2/InP interface, and ionized NHx was incorporated in the HfO2 film. We demonstrate that structural changes resulting from nitridation of HfO2/InP depend on the film thickness (i.e., a single-crystal interfacial layer of h-InN formed at thin (2 nm) HfO2/InP interfaces, whereas an amorphous InN layer formed at thick (>6 nm) HfO2/InP interfaces). Consequently, the tetragonal structure of HfO2 transformed into a mixture structure of tetragonal and monoclinic because the interfacial InN layer relieved interfacial strain between HfO2 and InP. During postdeposition annealing (PDA) in HfO2/InP at 600 °C, large numbers of oxidation states were generated as a result of interfacial reactions between interdiffused oxygen impurities and out-diffused InP substrate elements. However, in the case of the PDN of HfO2/InP structures at 600 °C, nitrogen incorporation in the HfO2 film effectively blocked the out-diffusion of atomic In and P, thus suppressing the formation of oxidation states. Accordingly, the number of interfacial defect states (Dit) within the band gap of InP was significantly reduced, which was also supported by DFT calculations. Interfacial InN in HfO2/InP increased the electron-barrier height to ∼0.6 eV, which led to low-leakage-current density in the gate voltage region over 2 V.

  4. Effects of field-grown genetically modified Zoysia grass on bacterial community structure.

    Science.gov (United States)

    Lee, Yong-Eok; Yang, Sang-Hwan; Bae, Tae-Woong; Kang, Hong-Gyu; Lim, Pyung-Ok; Lee, Hyo-Yeon

    2011-04-01

    Herbicide-tolerant Zoysia grass has been previously developed through Agrobacterium-mediated transformation. We investigated the effects of genetically modified (GM) Zoysia grass and the associated herbicide application on bacterial community structure by using culture-independent approaches. To assess the possible horizontal gene transfer (HGT) of transgenic DNA to soil microorganisms, total soil DNAs were amplified by PCR with two primer sets for the bar and hpt genes, which were introduced into the GM Zoysia grass by a callus-type transformation. The transgenic genes were not detected from the total genomic DNAs extracted from 1.5 g of each rhizosphere soils of GM and non-GM Zoysia grasses. The structures and diversities of the bacterial communities in rhizosphere soils of GM and non-GM Zoysia grasses were investigated by constructing 16S rDNA clone libraries. Classifier, provided in the RDP II, assigned 100 clones in the 16S rRNA gene sequences library into 11 bacterial phyla. The most abundant phyla in both clone libraries were Acidobacteria and Proteobacteria. The bacterial diversity of the GM clone library was lower than that of the non- GM library. The former contained four phyla, whereas the latter had seven phyla. Phylogenetic trees were constructed to confirm these results. Phylogenetic analyses of the two clone libraries revealed considerable difference from each other. The significance of difference between clone libraries was examined with LIBSHUFF statistics. LIBSHUFF analysis revealed that the two clone libraries differed significantly (P〈0.025), suggesting alterations in the composition of the microbial community associated with GM Zoysia grass.

  5. Structure and magnetic properties of flux grown single crystals of Co3-xFexSn2S2 shandites

    Science.gov (United States)

    Kassem, Mohamed A.; Tabata, Yoshikazu; Waki, Takeshi; Nakamura, Hiroyuki

    2016-01-01

    We report a successful single crystal growth of the shandite-type half-metallic ferromagnet Co3Sn2S2, and its Fe-substituted compounds, Co3-xFexSn2S2, by employing the flux method. Although Fe3Sn2S2 is unstable phase, we found that using the self Sn flux enables us to obtain single phase crystals up to x=0.53. The chemical composition of the grown plate-shaped single crystals was examined using wavelength-dispersive X-ray spectroscopy. The shandite structure with R 3 ̅m symmetry was confirmed by powder X-ray diffraction and the crystal structure parameters were refined using the Rietveld method. Magnetization measurements show suppression of the ferromagnetic order upon Fe-substitution , as well as in other substituted systems such as In- and Ni-substituted Co3Sn2S2. The almost identical magnetic phase diagrams of the Fe- and In-substituted compounds indicate that the electron number is dominantly significant to the magnetism in the Co-based shandite.

  6. Optical and structural properties of CuSbS2 thin films grown by thermal evaporation method

    International Nuclear Information System (INIS)

    Rabhi, A.; Kanzari, M.; Rezig, B.

    2009-01-01

    Structural, optical and electrical properties of CuSbS 2 thin films grown by thermal evaporation have been studied relating the effects of substrate heating conditions of these properties. The CuSbS 2 thin films were carried out at substrate temperatures in the temperature range 100-200 deg. C . The structure and composition were characterized by XRD, SEM and EDX. X-ray diffraction revealed that the films are (111) oriented upon substrate temperature 170 deg. C and amorphous for the substrate temperatures below 170 deg. C . No secondary phases are observed for all the films. The optical absorption coefficients and band gaps of the films were estimated by optical transmission and reflection measurements at room temperature. Strong absorption coefficients in the range 10 5 -10 6 cm -1 at 500 nm were found. The direct gaps Eg lie between 0.91-1.89 eV range. It is observed that there is a decrease in optical band gap Eg with increasing the substrate temperature. Resistivity of 0.03-0.96 Ω cm, in dependence on substrate temperature was characterized. The all unheated films exhibit p-type conductivity. The characteristics reported here also offer perspective for CuSbS 2 as an absorber material in solar cells applications

  7. Structural characterization of ZnO films grown by molecular beam epitaxy on sapphire with MgO buffer

    International Nuclear Information System (INIS)

    Pecz, B.; El-Shaer, A.; Bakin, A.; Mofor, A.-C.; Waag, A.; Stoemenos, J.

    2006-01-01

    The structural characteristics of the ZnO film grown on sapphire substrate using a thin MgO buffer layer were studied using transmission electron microscopy and high-resolution x-ray diffraction. The growth was carried out in a modified plasma-molecular beam epitaxy system. The observed misfit dislocations were well confined at the sapphire overgrown interface exhibiting domain matching epitaxy, where the integral multiples of lattice constants match across the interface. The main extended defects in the ZnO film were the threading dislocations having a mean density of 4x10 9 cm -2 . The formation of the MgO buffer layer as well as the ZnO growth were monitored in situ by reflection high-energy electron diffraction. The very thin ∼1 nm, MgO buffer layer can partially interdiffuse with the ZnO as well as react with the Al 2 O 3 substrate forming an intermediate epitaxial layer having the spinel (MgO/Al 2 O 3 ) structure

  8. Structural and elastoplastic properties of β -Ga2O3 films grown on hybrid SiC/Si substrates

    Science.gov (United States)

    Osipov, A. V.; Grashchenko, A. S.; Kukushkin, S. A.; Nikolaev, V. I.; Osipova, E. V.; Pechnikov, A. I.; Soshnikov, I. P.

    2018-04-01

    Structural and mechanical properties of gallium oxide films grown on (001), (011) and (111) silicon substrates with a buffer layer of silicon carbide are studied. The buffer layer was fabricated by the atom substitution method, i.e., one silicon atom per unit cell in the substrate was substituted by a carbon atom by chemical reaction with carbon monoxide. The surface and bulk structure properties of gallium oxide films have been studied by atomic-force microscopy and scanning electron microscopy. The nanoindentation method was used to investigate the elastoplastic characteristics of gallium oxide, and also to determine the elastic recovery parameter of the films under study. The ultimate tensile strength, hardness, elastic stiffness constants, elastic compliance constants, Young's modulus, linear compressibility, shear modulus, Poisson's ratio and other characteristics of gallium oxide have been calculated by quantum chemistry methods based on the PBESOL functional. It is shown that all these properties of gallium oxide are essentially anisotropic. The calculated values are compared with experimental data. We conclude that a change in the silicon orientation leads to a significant reorientation of gallium oxide.

  9. Structural analysis of Gossypium hirsutum fibers grown under greenhouse and hydroponic conditions.

    Science.gov (United States)

    Natalio, Filipe; Tahir, Muhammad Nawaz; Friedrich, Norman; Köck, Margret; Fritz-Popovski, Gerhard; Paris, Oskar; Paschke, Reinhard

    2016-06-01

    Cotton is the one of the world's most important crops. Like any other crop, cotton growth/development and fiber quality is highly dependent on environmental factors. Increasing global weather instability has been negatively impacting its economy. Cotton is a crop that exerts an intensive pressure over natural resources (land and water) and demands an overuse of pesticides. Thus, the search for alternative cotton culture methods that are pesticide-free (biocotton) and enable customized standard fiber quality should be encouraged. Here we describe a culture of Gossypium hirsutum ("Upland" Cotton) utilizing a greenhouse and hydroponics in which the fibers are morphological similar to conventional cultures and structurally fit into the classical two-phase cellulose I model with 4.19nm crystalline domains surrounded by amorphous regions. These fibers exhibit a single crystalline form of cellulose I-Iß, monoclinic unit cell. Fiber quality bulk analysis shows an improved length, strength, whiteness when compared with soil-based cultures. Finally, we show that our fibers can be spun, used for production of non-woven fabrics and indigo-vat stained demonstrating its potential in industrial and commercial applications. Copyright © 2016 Elsevier Inc. All rights reserved.

  10. Structural, electronic and photovoltaic characterization of multiwalled carbon nanotubes grown directly on stainless steel

    Directory of Open Access Journals (Sweden)

    Luca Camilli

    2012-05-01

    Full Text Available We have taken advantage of the native surface roughness and the iron content of AISI-316 stainless steel to grow multiwalled carbon nanotubes (MWCNTs by chemical vapour deposition without the addition of an external catalyst. The structural and electronic properties of the synthesized carbon nanostructures have been investigated by a range of electron microscopy and spectroscopy techniques. The results show the good quality and the high graphitization degree of the synthesized MWCNTs. Through energy-loss spectroscopy we found that the electronic properties of these nanostructures are markedly different from those of highly oriented pyrolytic graphite (HOPG. Notably, a broadening of the π-plasmon peak in the case of MWCNTs is evident. In addition, a photocurrent was measured when MWCNTs were airbrushed onto a silicon substrate. External quantum efficiency (EQE and photocurrent values were reported both in planar and in top-down geometry of the device. Marked differences in the line shapes and intensities were found for the two configurations, suggesting that two different mechanisms of photocurrent generation and charge collection are in operation. From this comparison, we are able to conclude that the silicon substrate plays an important role in the production of electron–hole pairs.

  11. Structural and nanomechanical properties of InN films grown on Si(1 0 0) by femtosecond pulsed laser deposition

    International Nuclear Information System (INIS)

    Hafez, M A; Mamun, M A; Elmustafa, A A; Elsayed-Ali, H E

    2013-01-01

    The structural and nanomechanical properties of InN films grown on Si(1 0 0) using femtosecond pulsed laser deposition were studied for different growth conditions. Atomic nitrogen was generated by either thermal cracking or laser-induced breakdown (LIB) of ammonia. Optical emission spectroscopy was conducted on the laser plasma and used to observe atomic nitrogen formation. An indium buffer layer was initially grown on the Si substrate at low temperature. The surface structure and morphology were investigated by in situ reflection high-energy electron diffraction, ex situ atomic force microscopy and x-ray diffraction (XRD). The results show that the initial buffer indium layers were terminated with the In(2 × 1) structure and had a smooth surface. With increased coverage, the growth mode developed from two-dimensional layers to three-dimensional islands. At room temperature (RT), formation of submicrometre islands resulted in mixed crystal structure of In and InN. As the substrate temperature was increased to 250–350 °C, the crystal structure was found to be dominated by fewer In and more InN, with only InN formed at 350 °C. The XRD patterns show that the grown InN films have wurtzite crystal structure. The film hardness near the surface was observed to increase from less than 1 GPa, characteristic of In for the sample grown at RT using the thermal cracker, to a hardness of 11 GPa at 30 nm from surface, characteristic of InN for samples grown at 350 °C by LIB. The hardness at deep indents reaches the hardness of the Si substrate of ∼12 GPa. (paper)

  12. Studies on surface structures and etch patterns on habit faces of gel-grown crystals of iodates of barium, strontium, and calcium

    International Nuclear Information System (INIS)

    Joshi, M.S.; Trivedi, S.G.

    1986-01-01

    Microtopographical studies on habit faces of gel grown crystals (of different habits) of iodates of Ba, Sr, and Ca are illustrated and described. Etch patterns on these faces are illustrated and correlated to the observed growth patterns on the respective faces. Growth mechanism of the crystals is explained in light of the observed surface structures and etch pits suitably produced. (author)

  13. Structural atomic-scale analysis of GaAs/AlGaAs quantum wires and quantum dots grown by droplet epitaxy on a (311)A substrate

    NARCIS (Netherlands)

    Keizer, J.G.; Jo, M.; Mano, T.; Noda, T.; Sakoda, K.; Koenraad, P.M.

    2011-01-01

    We report the structural analysis at the atomic scale of GaAs/AlGaAs quantum wires and quantum dots grown by droplet epitaxy on a (311)A-oriented substrate. The shape, interfaces, and composition of these nanostructures and their surrounding matrix are investigated. We show that quantum wires can be

  14. The atomic structure of the Si(111)-Pb buried interface grown on the Si(111)-(#sq root#3 x #sq root#3)-Pb reconstruction

    DEFF Research Database (Denmark)

    Howes, P.B.; Edwards, K.A.; Macdonald, J.E.

    1998-01-01

    that there are structural differences between the buried interfaces. We present surface X-ray diffraction measurements of the interface grown from the incommensurate Si(111)-(root 3 x root 3)-R30 degrees-Pb reconstruction and show that, in contrast to the starting surface, the interface comprises the junction between...

  15. Effectiveness of structured, hospital-based, nurse-led atrial fibrillation clinics: a comparison between a real-world population and a clinical trial population.

    Science.gov (United States)

    Qvist, Ina; Hendriks, Jeroen M L; Møller, Dorthe S; Albertsen, Andi E; Mogensen, Helle M; Oddershede, Gitte D; Odgaard, Annette; Mortensen, Leif Spange; Johnsen, Søren Paaske; Frost, Lars

    2016-01-01

    A previous randomised trial showed that structured, nurse-led atrial fibrillation (AF) care is superior to conventional AF care, although further research is needed to determine the outcomes of such care in a real-world setting. We compared the outcomes of patients in real-world, nurse-led, structured hospital AF clinics with the outcomes of a randomised trial of the efficacy of a nurse-led AF clinic, with respect to a composite outcome of cardiovascular-related hospitalisation and death. All patients were referred to the AF nurse specialist by cardiologists. The AF nurse specialist provided patient education, risk-factor control and stimulated empowerment and compliance. During follow-up, treatment was adjusted according to clinical guidelines. Patient education was repeated, and compliance with medical treatment was controlled. The study size was powered as a non-inferiority study. Outcome measures were adjudicated by the same principles in both cohorts. A total of 596 patients from the real world and 356 patients from a clinical trial were included in this study. No significant difference between groups with respect to age, type of AF or CHA2DS2VASc score was found. The composite primary end point occurred with an incidence rate of 8.0 (95% CI 6.1 to 10.4) per 100 person-years in the real-world population and 8.3 (95% CI 6.3 to 10.9) per 100 person-years in the clinical trial, with a crude HR of 0.83 (95% CI 0.56 to 1.23). Structured, nurse-led, hospital-based AF care appears to be effective, and patient outcomes in an actual, hospital-based, structured AF care are as least as good as those in trial settings.

  16. Electronic structure, morphology and emission polarization of enhanced symmetry InAs quantum-dot-like structures grown on InP substrates by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Maryński, A.; Sĕk, G.; Musiał, A.; Andrzejewski, J.; Misiewicz, J. [Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław (Poland); Gilfert, C.; Reithmaier, J. P. [Technische Physik, Institute of Nanostructure Technology and Analytics, CINSaT, University of Kassel, Heinrich Plett-Str. 40, D-34132 Kassel (Germany); Capua, A.; Karni, O.; Gready, D.; Eisenstein, G. [Department of Electrical Engineering, Technion, Haifa 32000 (Israel); Atiya, G.; Kaplan, W. D. [Department of Materials Science and Engineering, Technion, Haifa 32000 (Israel); Kölling, S. [Fraunhofer Institute for Photonic Microsystems, Center for Nanoelectronic Technologies, Königsbrücker Straße 180, D-01099 Dresden (Germany)

    2013-09-07

    The optical and structural properties of a new kind of InAs/InGaAlAs/InP quantum dot (QD)-like objects grown by molecular beam epitaxy have been investigated. These nanostructures were found to have significantly more symmetrical shapes compared to the commonly obtained dash-like geometries typical of this material system. The enhanced symmetry has been achieved due to the use of an As{sub 2} source and the consequent shorter migration length of the indium atoms. Structural studies based on a combination of scanning transmission electron microscopy (STEM) and atom probe tomography (APT) provided detailed information on both the structure and composition distribution within an individual nanostructure. However, it was not possible to determine the lateral aspect ratio from STEM or APT. To verify the in-plane geometry, electronic structure calculations, including the energy levels and transition oscillator strength for the QDs have been performed using an eight-band k·p model and realistic system parameters. The results of calculations were compared to measured polarization-resolved photoluminescence data. On the basis of measured degree of linear polarization of the surface emission, the in-plane shape of the QDs has been assessed proving a substantial increase in lateral symmetry. This results in quantum-dot rather than quantum-dash like properties, consistent with expectations based on the growth conditions and the structural data.

  17. Effects of Various Parameters on Structural and Optical Properties of CBD-Grown ZnS Thin Films: A Review

    Science.gov (United States)

    Sinha, Tarkeshwar; Lilhare, Devjyoti; Khare, Ayush

    2018-02-01

    Zinc sulfide (ZnS) thin films deposited by chemical bath deposition (CBD) technique have proved their capability in a wide area of applications including electroluminescent and display devices, solar cells, sensors, and field emitters. These semiconducting thin films have attracted a much attention from the scientific community for industrial and research purposes. In this article, we provide a comprehensive review on the effect of various parameters on various properties of CBD-grown ZnS films. In the first part, we discuss the historical background of ZnS, its basic properties, and the advantages of the CBD technique. Detailed discussions on the film growth, structural and optical properties of ZnS thin films affected by various parameters, such as bath temperature and concentration, deposition time, stirring speed, complexing agents, pH value, humidity in the environment, and annealing conditions, are also presented. In later sections, brief information about the recent studies and findings is also added to explore the scope of research work in this field.

  18. Thin yttrium iron garnet films grown by pulsed laser deposition: Crystal structure, static, and dynamic magnetic properties

    Energy Technology Data Exchange (ETDEWEB)

    Sokolov, N. S., E-mail: nsokolov@fl.ioffe.ru; Fedorov, V. V.; Korovin, A. M.; Suturin, S. M.; Baranov, D. A.; Gastev, S. V.; Krichevtsov, B. B.; Bursian, V. E.; Lutsev, L. V. [Ioffe Physical-Technical Institute of Russian Academy of Sciences, St. Petersburg 194021 (Russian Federation); Maksimova, K. Yu.; Grunin, A. I. [Immanuel Kant Baltic Federal University, Kaliningrad 236041 (Russian Federation); Tabuchi, M. [Synchrotron Radiation Research Center, Nagoya University, Nagoya 464-8603 (Japan)

    2016-01-14

    Pulsed laser deposition has been used to grow thin (10–84 nm) epitaxial layers of Yttrium Iron Garnet Y{sub 3}Fe{sub 5}O{sub 12} (YIG) on (111)–oriented Gadolinium Gallium Garnet substrates at different growth conditions. Atomic force microscopy showed flat surface morphology both on micrometer and nanometer scales. X-ray diffraction measurements revealed that the films are coherent with the substrate in the interface plane. The interplane distance in the [111] direction was found to be by 1.2% larger than expected for YIG stoichiometric pseudomorphic film indicating presence of rhombohedral distortion in this direction. Polar Kerr effect and ferromagnetic resonance measurements showed existence of additional magnetic anisotropy, which adds to the demagnetizing field to keep magnetization vector in the film plane. The origin of the magnetic anisotropy is related to the strain in YIG films observed by XRD. Magneto-optical Kerr effect measurements revealed important role of magnetization rotation during magnetization reversal. An unusual fine structure of microwave magnetic resonance spectra has been observed in the film grown at reduced (0.5 mTorr) oxygen pressure. Surface spin wave propagation has been demonstrated in the in-plane magnetized films.

  19. The Pine-Needle-Inspired Structure of Zinc Oxide Nanorods Grown on Electrospun Nanofibers for High-Performance Flexible Supercapacitors.

    Science.gov (United States)

    Sami, Syed Kamran; Siddiqui, Saqib; Shrivastava, Sajal; Lee, Nae-Eung; Chung, Chan-Hwa

    2017-12-01

    Flexible supercapacitors with high electrochemical performance and stability along with mechanical robustness have gained immense attraction due to the substantial advancements and rampant requirements of storage devices. To meet the exponentially growing demand of microsized energy storage device, a cost-effective and durable supercapacitor is mandatory to realize their practical applications. Here, in this work, the fabrication route of novel electrode materials with high flexibility and charge-storage capability is reported using the hybrid structure of 1D zinc oxide (ZnO) nanorods and conductive polyvinylidene fluoride-tetrafluoroethylene (P(VDF-TrFE)) electrospun nanofibers. The ZnO nanorods are conformably grown on conductive P(VDF-TrFE) nanofibers to fabricate the light-weighted porous electrodes for supercapacitors. The conductive nanofibers acts as a high surface area scaffold with significant electrochemical performance, while the addition of ZnO nanorods further enhances the specific capacitance by 59%. The symmetric cell with the fabricated electrodes presents high areal capacitance of 1.22 mF cm -2 at a current density of 0.1 mA cm -2 with a power density of more than 1600 W kg -1 . Furthermore, these electrodes show outstanding flexibility and high stability with 96% and 78% retention in specific capacitance after 1000 and 5000 cycles, respectively. The notable mechanical durability and robustness of the cell acquire both good flexibility and high performance. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Thin yttrium iron garnet films grown by pulsed laser deposition: Crystal structure, static, and dynamic magnetic properties

    International Nuclear Information System (INIS)

    Sokolov, N. S.; Fedorov, V. V.; Korovin, A. M.; Suturin, S. M.; Baranov, D. A.; Gastev, S. V.; Krichevtsov, B. B.; Bursian, V. E.; Lutsev, L. V.; Maksimova, K. Yu.; Grunin, A. I.; Tabuchi, M.

    2016-01-01

    Pulsed laser deposition has been used to grow thin (10–84 nm) epitaxial layers of Yttrium Iron Garnet Y 3 Fe 5 O 12 (YIG) on (111)–oriented Gadolinium Gallium Garnet substrates at different growth conditions. Atomic force microscopy showed flat surface morphology both on micrometer and nanometer scales. X-ray diffraction measurements revealed that the films are coherent with the substrate in the interface plane. The interplane distance in the [111] direction was found to be by 1.2% larger than expected for YIG stoichiometric pseudomorphic film indicating presence of rhombohedral distortion in this direction. Polar Kerr effect and ferromagnetic resonance measurements showed existence of additional magnetic anisotropy, which adds to the demagnetizing field to keep magnetization vector in the film plane. The origin of the magnetic anisotropy is related to the strain in YIG films observed by XRD. Magneto-optical Kerr effect measurements revealed important role of magnetization rotation during magnetization reversal. An unusual fine structure of microwave magnetic resonance spectra has been observed in the film grown at reduced (0.5 mTorr) oxygen pressure. Surface spin wave propagation has been demonstrated in the in-plane magnetized films

  1. Structural, Optical Constants and Photoluminescence of ZnO Thin Films Grown by Sol-Gel Spin Coating

    Directory of Open Access Journals (Sweden)

    Abdel-Sattar Gadallah

    2013-01-01

    Full Text Available We report manufacturing and characterization of low cost ZnO thin films grown on glass substrates by sol-gel spin coating method. For structural properties, X-ray diffraction measurements have been utilized for evaluating the dominant orientation of the thin films. For optical properties, reflectance and transmittance spectrophotometric measurements have been done in the spectral range from 350 nm to 2000 nm. The transmittance of the prepared thin films is 92.4% and 88.4%. Determination of the optical constants such as refractive index, absorption coefficient, and dielectric constant in this wavelength range has been evaluated. Further, normal dispersion of the refractive index has been analyzed in terms of single oscillator model of free carrier absorption to estimate the dispersion and oscillation energy. The lattice dielectric constant and the ratio of free carrier concentration to free carrier effective mass have been determined. Moreover, photoluminescence measurements of the thin films in the spectral range from 350 nm to 900 nm have been presented. Electrical measurements for resistivity evaluation of the films have been done. An analysis in terms of order-disorder of the material has been presented to provide more consistency in the results.

  2. Structural and optical properties of GaxIn1-xP layers grown by chemical beam epitaxy

    Science.gov (United States)

    Seong, Tae-Yeon; Yang, Jung-Ja; Ryu, Mee Yi; Song, Jong-In; Yu, Phil W.

    1998-05-01

    Chemical beam epitaxial (CBE) GaxIn1-xP layers (x≈0.5) grown on (001) GaAs substrates at temperatures ranging from 490 to 580°C have been investigated using transmission electron diffraction (TED), transmission electron microscopy, and photoluminescence (PL). TED examination revealed the presence of diffuse scattering 1/2{111}B positions, indicating the occurrence of typical CuPt-type ordering in the GaInP CBE layers. As the growth temperature decreased from 580 to 490°C, maxima in the intensity of the diffuse scattering moved from ½{111}B to ½{-1+δ,1-δ,0} positions, where δ is a positive value. As the growth temperature increased from 490 to 550°C, the maxima in the diffuse scattering intensity progressively approached positions of 1/2\\{bar 110\\} , i.e., the value of δ decreased from 0.25 to 0.17. Bandgap reduction (˜45 meV) was observed in the CBE GaInP layers and was attributed to the presence of ordered structures.

  3. N and Si Implantation Effect on Structural and Electrical Properties of Bridgman grown GaSe Single Crystal

    International Nuclear Information System (INIS)

    Karabulut, O.

    2004-01-01

    N and Si implantation to GaSe single crystals were carried out parallel to c-axis with ion beam of about 10 1 6 ions/cm 2 dose having energy values 30, 60 and 100 keV. Ion implantation modifications on Bridgman grown GaSe single crystals have been investigated by means of XRD, electrical conductivity, absorption and photoconductivity measurements. XRD measurements revealed that annealing results in a complete recovery of the crystalline nature that was moderately reduced upon implantation. It was observed that both N- and Siimplantation followed by annealing process decreased the resistivity values from 10 7 to 10 3 .-cm. The analysis of temperature dependent conductivity showed that at high temperature region above 200 K, the transport mechanism is dominated by thermal excitation in the doped and undoped GaSe samples. At lower temperatures, the conduction of carriers is dominated by variable range hopping mechanism in the implanted samples. Absorption and spectral photoconductivity measurements showed that the band edge is shifted in the implanted sample. All these modifications were attributed to the structural modifications and continuous shallow trap levels introduced upon implantation and annealing

  4. Structural and magnetic properties of SmCo-based magnetic films grown by electron-beam evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Saravanan, P., E-mail: psdrdo@gmail.com [Defence Metallurgical Research Laboratory, Hyderabad 500058 (India); Vinod, V.T.P.; Černík, Miroslav [Institute for Nanomaterials, Advanced Technologies and Innovation, Department of Natural Sciences, Technical University of Liberec, Studentská 1402/2, Liberec 1, 461 17 (Czech Republic); Vishnuraj, R.; Arout Chelvane, J.; Kamat, S.V. [Defence Metallurgical Research Laboratory, Hyderabad 500058 (India); Hsu, Jen-Hwa, E-mail: jhhsu@phys.ntu.edu.tw [Department of Physics, National Taiwan University, Taipei 106, Taiwan (China)

    2015-07-01

    Sub-micron thick Sm–Co films (200 and 300 nm) with selective phase composition are grown on Si (100) substrates by electron-beam evaporation using Sm-lean alloy targets such as Sm{sub 4}Co{sub 96} and Sm{sub 8}Co{sub 92}. The structural and magnetic properties of Sm–Co films are characterized by x-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM) and super-conducting quantum interference device (SQUID) magnetometer. The Sm–Co films obtained with the Sm{sub 4}Co{sub 96} target exhibit Sm{sub 2}Co{sub 17} as a prominent phase; while the films produced with the Sm{sub 8}Co{sub 92} target show Sm{sub 2}Co{sub 7} as a major phase. Both the Sm–Co films reveal granular morphology; however, the estimated grain size values are slightly lower in the case of Sm{sub 2}Co{sub 7} films, irrespective of their thicknesses. Coercivity (H{sub c}) values of 1.48 and 0.9 kOe are achieved for the as-grown 200-nm thick Sm{sub 2}Co{sub 17} and Sm{sub 2}Co{sub 7}-films. Temperature-dependent magnetization studies confirm that the demagnetization behaviors of these films are consistent with respect to the identified phase composition. Upon rapid thermal annealing, maximum H{sub c} value of 8.4 kOe is achieved for the 200 nm thick Sm{sub 2}Co{sub 17}-films. As far as e-beam evaporated Sm–Co films are concerned, this H{sub c} value is one of the best values reported so far. - Highlights: • Electron-beam evaporation was exploited to grow sub-μm thick Sm–Co films. • Sm{sub 2}Co{sub 7} and Sm{sub 2}Co{sub 17} magnetic phases were crystallized using Sm-lean alloy targets. • Both 200 and 300-nm thick Sm–Co films revealed distinct granular morphology. • Sm–Co films of lower thickness exhibited high H{sub c} and low M{sub s} and vice-versa. • Coercivity value of 8.4 kOe achieved for the 200-nm thick Sm{sub 2}Co{sub 17}-films after RTA.

  5. Evolution of Structural and Optical Properties of ZnO Nanorods Grown on Vacuum Annealed Seed Crystallites

    Directory of Open Access Journals (Sweden)

    Waqar Khan

    2018-01-01

    Full Text Available In this study, the ambient condition for the as-coated seed layer (SL annealing at 350 °C is varied from air or nitrogen to vacuum to examine the evolution of structural and optical properties of ZnO nanorods (NRs. The NR crystals of high surface density (~240 rods/μm2 and aspect ratio (~20.3 show greatly enhanced (002 degree of orientation and crystalline quality, when grown on the SLs annealed in vacuum, compared to those annealed in air or nitrogen ambient. This is due to the vacuum-annealed SL crystals of a highly preferred orientation toward (002 and large grain sizes. X-ray photoelectron spectroscopy also reveals that the highest O/Zn atomic ratio of 0.89 is obtained in the case of vacuum-annealed SL crystals, which is due to the effective desorption of hydroxyl groups and other contaminants adsorbed on the surface formed during aqueous solution-based growth process. Near band edge emission (ultra violet range of 360–400 nm of the vacuum-annealed SLs is also enhanced by 44% and 33% as compared to those annealed in air and nitrogen ambient, respectively, in photoluminescence with significant suppression of visible light emission associated with deep level transition. Due to this improvement of SL optical crystalline quality, the NR crystals grown on the vacuum-annealed SLs produce ~3 times higher ultra violet emission intensity than the other samples. In summary, it is shown that the ZnO NRs preferentially grow along the wurtzite c-axis direction, thereby producing the high crystalline quality of nanostructures when they grow on the vacuum-annealed SLs of high crystalline quality with minimized impurities and excellent preferred orientation. The ZnO nanostructures of high crystalline quality achieved in this study can be utilized for a wide range of potential device applications such as laser diodes, light-emitting diodes, piezoelectric transducers and generators, gas sensors, and ultraviolet detectors.

  6. Morphological dependent Indium incorporation in InGaN/GaN multiple quantum wells structure grown on 4° misoriented sapphire substrate

    Directory of Open Access Journals (Sweden)

    Teng Jiang

    2016-03-01

    Full Text Available The epitaxial layers of InGaN/GaN MQWs structure were grown on both planar and vicinal sapphire substrates by metal organic chemical vapor deposition. By comparing the epitaxial layers grown on planar substrate, the sample grown on 4° misoriented from c-plane toward m-plane substrate exhibited many variations both on surface morphology and optical properties according to the scanning electronic microscopy and cathodoluminescence (CL spectroscopy results. Many huge steps were observed in the misoriented sample and a large amount of V-shape defects located around the boundary of the steps. Atoms force microscopy images show that the steps were inclined and deep grooves were formed at the boundary of the adjacent steps. Phase separation was observed in the CL spectra. CL mapping results also indicated that the deep grooves could effectively influence the localization of Indium atoms and form an In-rich region.

  7. Wafer-scale controlled exfoliation of metal organic vapor phase epitaxy grown InGaN/GaN multi quantum well structures using low-tack two-dimensional layered h-BN

    Energy Technology Data Exchange (ETDEWEB)

    Ayari, Taha; Li, Xin; Voss, Paul L.; Ougazzaden, Abdallah, E-mail: aougazza@georgiatech-metz.fr [School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Georgia Tech Lorraine, UMI 2958, Georgia Tech-CNRS, 57070 Metz (France); Sundaram, Suresh; El Gmili, Youssef [Georgia Tech Lorraine, UMI 2958, Georgia Tech-CNRS, 57070 Metz (France); Salvestrini, Jean Paul [Georgia Tech Lorraine, UMI 2958, Georgia Tech-CNRS, 57070 Metz (France); Université de Lorraine, LMOPS, EA 4423, 57070 Metz (France)

    2016-04-25

    Recent advances in epitaxial growth have led to the growth of III-nitride devices on 2D layered h-BN. This advance has the potential for wafer-scale transfer to arbitrary substrates, which could improve the thermal management and would allow III-N devices to be used more flexibly in a broader range of applications. We report wafer scale exfoliation of a metal organic vapor phase epitaxy grown InGaN/GaN Multi Quantum Well (MQW) structure from a 5 nm thick h-BN layer that was grown on a 2-inch sapphire substrate. The weak van der Waals bonds between h-BN atomic layers break easily, allowing the MQW structure to be mechanically lifted off from the sapphire substrate using a commercial adhesive tape. This results in the surface roughness of only 1.14 nm on the separated surface. Structural characterizations performed before and after the lift-off confirm the conservation of structural properties after lift-off. Cathodoluminescence at 454 nm was present before lift-off and 458 nm was present after. Electroluminescence near 450 nm from the lifted-off structure has also been observed. These results show that the high crystalline quality ultrathin h-BN serves as an effective sacrificial layer—it maintains performance, while also reducing the GaN buffer thickness and temperature ramps as compared to a conventional two-step growth method. These results support the use of h-BN as a low-tack sacrificial underlying layer for GaN-based device structures and demonstrate the feasibility of large area lift-off and transfer to any template, which is important for industrial scale production.

  8. Investigation on bandgap, diffraction, interference, and refraction effects of photonic crystal structure in GaN/InGaN LEDs for light extraction.

    Science.gov (United States)

    Patra, Saroj Kanta; Adhikari, Sonachand; Pal, Suchandan

    2014-06-20

    In this paper, we have made a clear differentiation among bandgap, diffraction, interference, and refraction effects in photonic crystal structures (PhCs). For observing bandgap, diffraction, and refraction effects, PhCs are considered on the top p-GaN surface of light emitting diodes (LEDs), whereas for interference effect, hole type PhCs are considered to be embedded within n-GaN layer of LED. From analysis, it is observed that at a particular lattice periodicity, for which bandgap lies within the wavelength of interest shows a significant light extraction due to inhibition of guided mode. Beyond a certain periodicity, diffraction effect starts dominating and light extraction improves further. The interference effect is observed in embedded photonic crystal LEDs, where depth of etching supports constructive interference of outward light waves. We have also shed light on refraction effects exhibited by the PhCs and whether negative refraction properties of PhCs may be useful in case of LED light extraction.

  9. Enhancement of the 2DEG density in AlGaAs/InGaAs/GaAs P-HEMTs structures grown by MBE on (311)A and (111)A GaAs substrates

    International Nuclear Information System (INIS)

    Rekaya, S.; Sfaxi, L.; Bouzaiene, L.; Maaref, H.; Bru-Chevallier, C.

    2008-01-01

    The pseudomorphic high electron mobility transistor (P-HEMT) structure materials Al 0.33 Ga 0.7 As/In 0.1 Ga 0.9 As/GaAs have been grown by molecular beam epitaxy (MBE) on (311)A and (111)A GaAs substrates. The epitaxy of strain heterostructure on high index GaAs substrate has led to new growth phenomena, material properties and device applications. The photoluminescence (PL) spectra of the structures have been measured at low temperature. The dominant emission in the PL spectra is due to the recombination from the first electron (e1) subband to the first heavy-hole (hh1) subband (E 11 : e1-hh1). This feature (E 11 ) is a relatively broad peak and has a typical asymmetric line shape. The transformation of the PL spectra in the close vicinity of the Fermi edge (E F ) under different excitation densities gives strong evidence for the Fermi Edge Singularity (FES) existence. The density of the quasi-two-dimensional electron gas (2DEG) determined by PL study (n s PL ), is in sufficient agreement with the values found from Hall measurements n s Hall at 77 K. The results prove an increase of the electron density in sample grown on GaAs (111)A and (311)A rather than in equivalent sample grown on (001) GaAs substrate. This effect is in good agreement with our theoretical prediction, which is based on a self-consistent solution of the coupled Schroedinger and Poisson equations

  10. Effect of substrate temperature on the structure of amorphous oxygenated hydrocarbon films grown with a pulsed supersonic methane plasma flow

    Energy Technology Data Exchange (ETDEWEB)

    Fedoseeva, Yu. V., E-mail: fedoseeva@niic.nsc.ru [Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Novosibirsk 630090 (Russian Federation); Pozdnyakov, G.A. [Khristianovich Institute of Theoretical and Applied Mechanics, SB RAS, Novosibirsk 630090 (Russian Federation); Okotrub, A.V.; Kanygin, M.A. [Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Novosibirsk 630090 (Russian Federation); Nastaushev, Yu. V. [Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk 630090 (Russian Federation); Vilkov, O.Y. [St. Petersburg State University, St. Petersburg 198504 (Russian Federation); Bulusheva, L.G. [Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Novosibirsk 630090 (Russian Federation)

    2016-11-01

    Highlights: • A deposition of supersonic methane plasma flow on silicon substrate produces amorphous oxygenated hydrocarbon (CO{sub x}H{sub y}) film. • The thickness, composition, and wettability of the film depend on the substrate temperature. • A rise of the substrate temperature from 500 to 700 °C promotes the sp{sup 3}-hybridization carbon formation. - Abstract: Since amorphous oxygenated hydrocarbon (CO{sub x}H{sub y}) films are promising engineering materials a study of the structure and composition of the films depending on the conditions of synthesis is important for controlling of their physicochemical properties. Here, we used the methods of scanning and transmission electron microscopy, X-ray photoelectron, near-edge X-ray absorption fine structure, Fourier transform infrared and Raman spectroscopy to reveal changes in the chemical connectivity of CO{sub x}H{sub y} films grown on silicon substrates heated to 300, 500, and 700 °C using a supersonic flow of methane plasma. It was found that the CO{sub x}H{sub y} films, deposited at 300 and 500 °C, were mainly composed of the sp{sup 2}-hybridized carbon areas with various oxygen species. A rise of the substrate temperature caused an increase of the portion of tetrahedral carbon atoms as well as carboxyl and hydroxyl groups. With growth of the substrate temperature, the film thickness reduced monotonically from 400 to 180 nm, while the film adhesion improved substantially. The films, deposited at lower temperatures, showed high hydrophilicity due to porosity and presence of oxygenated groups both at the surface and in the bulk.

  11. Structural and morphological characterizations of ZnO films grown on GaAs substrates by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Agouram, S.; Zuniga Perez, J.; Munoz-Sanjose, V. [Universitat de Valencia, Departamento de Fisica Aplicada y Electromagnetismo, Burjassot (Spain)

    2007-07-15

    ZnO films were grown on GaAs(100), GaAs(111)A and GaAs(111)B substrates by metal organic chemical vapour deposition (MOCVD). Diethylzinc (DEZn) and tertiarybutanol (t-butanol) were used as Zn and O precursors, respectively. The influence of the growth temperature and GaAs substrate orientation on the crystalline orientation and morphology of the ZnO grown films has been analysed. Crystallinity of grown films was studied by X-ray diffraction (XRD); thickness and morphology of ZnO films were investigated by scanning electron microscopy (SEM). SEM results reveal significant differences between morphologies depending on growth temperature but not significant differences were detected on the texture of grown films. (orig.)

  12. Electronic structure and fine structural features of the air-grown UNxOy on nitrogen-rich uranium nitride

    Science.gov (United States)

    Long, Zhong; Zeng, Rongguang; Hu, Yin; Liu, Jing; Wang, Wenyuan; Zhao, Yawen; Luo, Zhipeng; Bai, Bin; Wang, Xiaofang; Liu, Kezhao

    2018-06-01

    Oxide formation on surface of nitrogen-rich uranium nitride film/particles was investigated using X-ray photoelectron spectroscopy (XPS), auger electron spectroscopy (AES), aberration-corrected transmission electron microscopy (TEM), and high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) coupled with electron energy-loss spectroscopy (EELS). XPS and AES studies indicated that the oxidized layer on UN2-x film is ternary compound uranium oxynitride (UNxOy) in 5-10 nm thickness. TEM/HAADF-STEM and EELS studies revealed the UNxOy crystallizes in the FCC CaF2-type structure with the lattice parameter close to the CaF2-type UN2-x matrix. The work can provide further information to the oxidation mechanism of uranium nitride.

  13. Improving InGaN-LED performance by optimizing the patterned sapphire substrate shape

    International Nuclear Information System (INIS)

    Huang Xiao-Hui; Liu Jian-Ping; Fan Ya-Ming; Kong Jun-Jie; Yang Hui; Wang Huai-Bing

    2012-01-01

    The epitaxial growths of GaN films and GaN-based LEDs on various patterned sapphire substrates (PSSes) with different values of fill factor (f) and slanted angle (θ) are investigated in detail. The threading dislocation (TD) density is lower in the film grown on the PSS with a smaller fill factor, resulting in a higher internal quantum efficiency (IQE). Also the ability of the LED to withstand the electrostatic discharge (ESD) increases as the fill factor decreases. The illumination output power of the LED is affected by both θ and f. It is found that the illumination output power of the LED grown on the PSS with a lower production of tan θ and f is higher than that with a higher production of tan θ and f. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  14. Psychological recovery after intensive care: Outcomes of a long-term quasi-experimental study of structured nurse-led follow-up.

    Science.gov (United States)

    Jónasdóttir, Rannveig J; Jónsdóttir, Helga; Gudmundsdottir, Berglind; Sigurdsson, Gisli H

    2018-02-01

    To compare psychological recovery of patients receiving structured nurse-led follow-up and patients receiving usual care after intensive care discharge. Quasi-experimental study. Single centre, university hospital, mixed intensive care patient population. Symptoms of post-traumatic stress disorder, anxiety and depression measured three and four times over 12 months after intensive care discharge. Disturbing memories of the intensive care stay and psychological reactions (that one's life was in danger, threat to physical integrity, intense fear, helplessness, horror) three months after intensive care. A mixed effect model tested differences between the groups over time and regression model predicted post-traumatic stress at three months. The experimental group had significantly more symptoms of post-traumatic stress and anxiety than the control group over the 12 months. Patients from both groups had severe symptoms of post-traumatic stress. Patients with post-traumatic stress at three months had disturbing memories and psychological reactions. The structured nurse-led follow-up did not improve patients' measured outcomes of psychological recovery after intensive care. Patients with severe symptoms of post-traumatic stress are of concern. Emphasis needs to be placed on disturbing memories of the intensive care stay and psychological reactions when constructing intensive care nurse-led follow-up. Copyright © 2017 Elsevier Ltd. All rights reserved.

  15. Synthesis of In0.1Ga0.9N/GaN structures grown by MOCVD and MBE for high speed optoelectronics

    KAUST Repository

    Alshehri, Bandar

    2016-06-07

    In this work, we report a comparative investigation of InxGa1-xN (SL) and InxGa1-xN/GaN (MQW) structures with an indium content equivalent to x=10%. Both structures are grown on (0001) sapphire substrates using MOCVD and MBE growth techniques. Optical properties are evaluated for samples using PL characteristics. Critical differences between the resulting epitaxy are observed. Microstructures have been assessed in terms of crystalline quality, density of dislocations and surface morphology. We have focused our study towards the fabrication of vertical PIN photodiodes. The technological process has been optimized as a function of the material structure. From the optical and electrical characteristics, this study demonstrates the benefit of InGaN/GaN MQW grown by MOCVD in comparison with MBE for high speed optoelectronic applications.

  16. Synthesis of In0.1Ga0.9N/GaN structures grown by MOCVD and MBE for high speed optoelectronics

    KAUST Repository

    Alshehri, Bandar; Dogheche, Karim; Belahsene, Sofiane; Janjua, Bilal; Ramdane, Abderrahim; Patriarche, Gilles; Ng, Tien Khee; S-Ooi, Boon; Decoster, Didier; Dogheche, Elhadj

    2016-01-01

    In this work, we report a comparative investigation of InxGa1-xN (SL) and InxGa1-xN/GaN (MQW) structures with an indium content equivalent to x=10%. Both structures are grown on (0001) sapphire substrates using MOCVD and MBE growth techniques. Optical properties are evaluated for samples using PL characteristics. Critical differences between the resulting epitaxy are observed. Microstructures have been assessed in terms of crystalline quality, density of dislocations and surface morphology. We have focused our study towards the fabrication of vertical PIN photodiodes. The technological process has been optimized as a function of the material structure. From the optical and electrical characteristics, this study demonstrates the benefit of InGaN/GaN MQW grown by MOCVD in comparison with MBE for high speed optoelectronic applications.

  17. Structural properties of Pt/TiO{sub 2}/Pt heterostructure grown on sapphire substrate—Influence of annealing processes

    Energy Technology Data Exchange (ETDEWEB)

    Roch, Tomas, E-mail: roch@fmph.uniba.sk; Durina, Pavol; Grancic, Branislav; Gregor, Maros; Plecenik, Tomas; Truchly, Martin; Mikula, Marian; Satrapinskyy, Leonid; Kus, Peter; Plecenik, Andrej

    2014-09-01

    Highlights: • Pt/TiO{sub 2}/Pt, Pt/TiO{sub 2} and TiO{sub 2}/Pt stacks were grown on (c-cut) Al{sub 2}O{sub 3} and annealed at 600 °C. • Pt/TiO{sub 2}/Pt contains both TiO{sub 2}-anatase (27%) and rutile (73%) phases after annealing. • Pt/TiO{sub 2} contains both anatase and rutile, TiO{sub 2}/Pt anatase phase only. • Epitaxial relationship of bottom platinum: Pt(1 1 1)[1–10]||sub(0 0 0 1)[11{sup ¯}00]. • Platinum top layer is uniaxially oriented: Pt(1 1 1)||sub(0 0 0 1). - Abstract: Simple gas sensors based on resistivity change of TiO{sub 2} thin films using combined top and bottom metallic contacts are very promising. In this work influence of ex situ annealing in ambient air on structure of TiO{sub 2} thin film stacked between two platinum contact layers has been studied. The layers were deposited using DC magnetron sputtering on unheated c-cut sapphire substrates. For lowering of the Schottky barrier at the Pt–TiO{sub 2} interfaces and for improved crystalline stability, ex situ annealing at 600 °C in air was carried out. In order to study separately influence of top and bottom platinum layers on crystal structure, also reference samples Pt/TiO{sub 2}/Al{sub 2}O{sub 3} and TiO{sub 2}/Pt/Al{sub 2}O{sub 3} have been prepared. Non-ambient X-ray diffraction measurement during annealing process and X-ray pole figures after annealing has been measured. Near epitaxial relationship was observed for bottom Pt layer grown on c-cut sapphire substrate: Pt(1 1 1)[11{sup ¯}0]||Al{sub 2}O{sub 3}(0 0 0 1)[11{sup ¯}00]. Inner titania layer shows randomly oriented both TiO{sub 2}-rutile (R) and anatase (A) phases with the volumetric ratio of R/A ∼ 2.7. If prepared without top Pt contact layer, the TiO{sub 2} transforms during annealing to random single anatase phase. The TiO{sub 2} layer overgrown with only single Pt top contact layer shows randomly oriented both rutile and anatase phases with volumetric ratio R/A ∼ 2.3. The top Pt layer on TiO{sub 2

  18. Structural identification of lipopeptide biosurfactants produced by Bacillus subtilis strains grown on the media obtained from renewable natural resources.

    Science.gov (United States)

    Paraszkiewicz, Katarzyna; Bernat, Przemysław; Kuśmierska, Anna; Chojniak, Joanna; Płaza, Grażyna

    2018-03-01

    The aim of the study was to identify and characterize lipopeptide (LP) biosurfactants produced by two Bacillus subtilis strains (KP7 and I'-1a) grown on various media prepared from renewable natural resources: two different brewery wastewaters (BW#4 and BW#6), 2% beet molasses (M), apple peels extract (APE) supplemented with 0.25% of yeast extract (YE) or 0.25% peptone (P), and similarly supplemented carrot peels extract (CPE). In all used media both strains retained their individual LP production signature characterized by surfactin and iturin overproduction exhibited by KP7 and I'-1a strain, respectively. The production level and the structural diversity of synthesized LPs were dependent on the medium composition. In the CPE+YE medium it was higher than the yield obtained in Luria-Bertani (140.6 and 100.3 mg L -1 , respectively). Surfactins were produced by both strains as a mixture of four homologues (C13-C16) with the domination of variant C14. All other broths prepared from renewable resources strongly stimulated the iturin production by I'-1a strain with the exception of BW media. The highest iturin concentration (428.7 mg L -1 ) obtained in the CPE+P culture of I'-1a strain was about seven-fold higher than in LB. In all cultures only iturin A was identified. Among four iturin homologues (C13-16) produced by I'-1a strain, the highest relative contents of C16 variant (70-80%) were calculated for samples obtained from APE+P and CPE+P media. The obtained data indicate that the waste composition has an influence on both the types and amounts of biosurfactants produced by studied B. subtilis strains. Copyright © 2017 Elsevier Ltd. All rights reserved.

  19. Optical and structural properties of Mn-doped ZnO nanorods grown by aqueous chemical growth for spintronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Strelchuk, V.V. [V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45 Nauky pr., 03028 Kyiv (Ukraine); Nikolenko, A.S., E-mail: nikolenko_mail@ukr.net [V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45 Nauky pr., 03028 Kyiv (Ukraine); Kolomys, O.F.; Rarata, S.V.; Avramenko, K.A.; Lytvyn, P.M. [V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45 Nauky pr., 03028 Kyiv (Ukraine); Tronc, P. [Centre National de la Recherche Scientifique, Ecole Superieure de Physique et de Chimie Industrielles de la Ville de Paris, 10 rue Vauquelin, 75005 Paris (France); Chey, Chan Oeurn; Nur, Omer; Willander, Magnus [Department of Science and Technology, Linköping University, 601 74 Norrköping (Sweden)

    2016-02-29

    The effect of Mn-doping on the structural, morphological, optical and magnetic properties of the ZnO:Mn nanorods (NRs) synthesized by aqueous chemical process is reported. Grown ZnO:Mn NRs are shown to have hexagonal end facets and the diameters increasing with nominal Mn content. Optical absorption measurements show a decrease in optical band gap with increase of Mn concentration. Raman spectroscopy revealed significant modification of the lattice vibrational properties of the ZnO matrix upon Mn doping. The additional Mn-related vibrational mode, intensity of which increases with amount of Mn can be regarded as an evidence of Mn incorporation into the host lattice of the ZnO. At high Mn concentrations, coexistence of hexagonal Zn{sub 1−x}Mn{sub x}O phase along with the secondary phases of ZnMn{sub 2}O{sub 4} cubic spinel is revealed. Magnetic properties of ZnO:Mn NRs are studied by combinatorial atomic force microscopy and magnetic force microscopy imaging, and obtained clear magnetic contrast at room temperature provides a strong evidence of ferromagnetic behavior. - Highlights: • Synthesis of Mn-doped ZnO nanorods by hydrothermal method is demonstrated. • Doping with Mn significantly changes the morphology of ZnO nanorods. • Additional Mn-induced Raman modes evidence incorporation of Mn into ZnO matrix. • Formation of secondary ZnMn{sub 2}O{sub 4} spinel phase is found at high Mn concentrations. • Contrast MFM images of ZnO:Mn nanorods indicate ferromagnetism at room temperature.

  20. Stress engineering in GaN structures grown on Si(111) substrates by SiN masking layer application

    Energy Technology Data Exchange (ETDEWEB)

    Szymański, Tomasz, E-mail: tomasz.szymanski@pwr.edu.pl; Wośko, Mateusz; Paszkiewicz, Bogdan; Paszkiewicz, Regina [The Faculty of Microsystem Electronics and Photonics, Wrocaw University of Technology, Janiszewskiego 11/17, 50-372 Wroclaw (Poland); Drzik, Milan [International Laser Center, Ilkovicova 3, 841-04 Bratislava 4 (Slovakia)

    2015-07-15

    GaN layers without and with an in-situ SiN mask were grown by using metal organic vapor phase epitaxy for three different approaches used in GaN on silicon(111) growth, and the physical and optical properties of the GaN layers were studied. For each approach applied, GaN layers of 1.4 μm total thickness were grown, using silan SiH{sub 4} as Si source in order to grow Si{sub x}N{sub x} masking layer. The optical micrographs, scanning electron microscope images, and atomic force microscope images of the grown samples revealed cracks for samples without SiN mask, and micropits, which were characteristic for the samples grown with SiN mask. In situ reflectance signal traces were studied showing a decrease of layer coalescence time and higher degree of 3D growth mode for samples with SiN masking layer. Stress measurements were conducted by two methods—by recording micro-Raman spectra and ex-situ curvature radius measurement—additionally PLs spectra were obtained revealing blueshift of PL peak positions with increasing stress. The authors have shown that a SiN mask significantly improves physical and optical properties of GaN multilayer systems reducing stress in comparison to samples grown applying the same approaches but without SiN masking layer.

  1. Improved performance of UV-LED by p-AlGaN with graded composition

    KAUST Repository

    Yan, Jianchang

    2010-11-02

    AlGaN-based ultraviolet light emitting diodes (UV-LEDs) on AlN/sapphire template were grown by metal organic chemical vapour deposition. The AlN template was characterized by atomic force microscopy and high resolution X-ray diffraction. Atomic force microscopy image shows that the AlN surface is very flat, while high resolution X-ray diffraction results prove the good crystalline quality of the AlN template. A novel structure UV-LED which has several p-AlGaN layers with graded composition is compared with a common structure UV-LED which has a single p-Al0.5Ga0.5N layer. The forward bias voltage at 20 mA driving current for the novel structure UV-LED is nearly 3 V higher than that of the common structure UV-LED, however, the electroluminescence intensity of the former is over two times higher than that of the latter. The total quantum efficiency of the novel structure UV-LED is more than 50% higher than that of the common structure UV-LED. The improvement is considered to be the result of better holes injection efficiency in the novel structure UV-LED. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Comparison of radiative and structural properties of 1.3 µm InxGa(1-x)As quantum-dot laser structures grown by metalorganic chemical vapor deposition and molecular-beam epitaxy: Effect on the lasing properties

    NARCIS (Netherlands)

    Passaseo, A.; Vittorio, de M.; Todaro, M.T.; Tarantini, I.; Giorgi, de M.; Cingolani, R.; Taurino, A.; Catalano, M.; Fiore, A.; Markus, A.; Chen, J.X.; Paranthoën, C.; Oesterle, U.; Ilegems, M.

    2003-01-01

    The authors have studied the radiative and structural properties of identical InxGa(1-x)As quantum dot laser structures grown by metalorg. CVD (MOCVD) and MBE. Despite the comparable emission properties found in the two devices by photoluminescence, electroluminescence, and photocurrent

  3. Structural Characterization and Antimicrobial Activity of a Biosurfactant Obtained From Bacillus pumilus DSVP18 Grown on Potato Peels

    Science.gov (United States)

    Sharma, Deepak; Ansari, Mohammad Javed; Gupta, Sonam; Al Ghamdi, Ahmad; Pruthi, Parul; Pruthi, Vikas

    2015-01-01

    Background: Biosurfactants constitute a structurally diverse group of surface-active compounds derived from microorganisms. They are widely used industrially in various industrial applications such as pharmaceutical and environmental sectors. Major limiting factor in biosurfactant production is their production cost. Objectives: The aim of this study was to investigate biosurfactant production under laboratory conditions with potato peels as the sole source of carbon source. Materials and Methods: A biosurfactant-producing bacterial strain (Bacillus pumilus DSVP18, NCBI GenBank accession no. GQ865643) was isolated from motor oil contaminated soil samples. Biochemical characteristics of the purified biosurfactant were determined and its chemical structure was analyzed. Stability studies were performed and biological activity of the biosurfactant was also evaluated. Results: The strain, when grown on modified minimal salt media supplemented with 2% potato peels as the sole carbon source, showed the ability to reduce Surface Tension (ST) value of the medium from 72 to 28.7 mN/m. The isolated biosurfactant (3.2 ± 0.32 g/L) was stable over a wide range of temperatures (20 - 120 ºC), pH (2-12) and salt concentrations (2 - 12%). When characterized using high-performance liquid chromatography (HPLC) and Fourier transform infrared spectroscopy, it was found to be a lipopeptide in nature, which was further confirmed by Matrix-assisted laser desorption/ionization time-of-flight mass spectrometry (mass peak 1044.60) and nuclear magnetic resonance (NMR) studies. Data showed that the isolated biosurfactant at the concentration range of 30 - 35 µg/ml had strong antimicrobial activity when tested against standard strains of Bacillus cereus, Escherichia coli, Salmonella enteritidis, Staphylococcus aureus and Paenibacillus larvae. Conclusions: Potato peels were proved to be potentially useful substrates for biosurfactant production by B. pumilus DSVP18. The strain possessed a

  4. Structure and magnetism of ultrathin Co and Fe films epitaxially grown on Pd/Cu(0 0 1)

    International Nuclear Information System (INIS)

    Lu, Y.F.; Przybylski, M.; Yan, L.; Barthel, J.; Meyerheim, H.L.; Kirschner, J.

    2005-01-01

    A contribution originating from the Co/Pd and Fe/Pd interfaces to the magneto-optical Kerr effect (MOKE) rotation is analyzed for Co and/or Fe films grown on a Pd-buffer-monolayer on Cu(0 0 1). A clear increase of the MOKE signal in comparison to the Co(Fe) films grown directly on Cu(0 0 1) is detected. An interpretation is supported by similar observations for Co films grown on Pd(1 1 0) and Pd(0 0 1). In particular, the sign reversal of the Kerr loops with increasing thickness of the Co(Fe) films is discussed. Magneto-optical effects are separated from the real magnetization and its dependence on the film thickness

  5. Luminescent features of sol–gel derived rare-earth multi-doped oxyfluoride nano-structured phosphors for white LED application

    International Nuclear Information System (INIS)

    Gouveia-Neto, A.S.; Silva, A.F. da; Bueno, L.A.; Costa, E.B. da

    2012-01-01

    Rare-earth doped oxyfluoride 75SiO 2 :25PbF 2 nano-structured phosphors for white-light-emitting diodes were synthesized by thermal treatment of precursor sol–gel derived glasses. Room temperature luminescence features of Eu 3+ , Sm 3+ , Tb 3+ , Eu 3+ /Tb 3+ , and Sm 3+ /Tb 3+ ions incorporated into low-phonon-energy PbF 2 nanocrystals dispersed in the aluminosilicate glass matrix and excited with UV light emitting diode were investigated. The luminescence spectra exhibited strong emission signals in the red (600, 610, 625, and 646 nm), green (548 and 560 nm), and blue (485 nm) wavelength regions. White-light emission was observed in Sm/Tb and Eu/Tb double-doped activated phosphors employing UV-LED excitation at 395 nm. The dependence of the luminescence emission intensities upon annealing temperature and rare-earth concentration was also examined. The results indicated that there exist optimum annealing temperature and activator ion concentration in order to obtain intense visible emission light with high color rendering index. The study suggests that the nanocomposite phosphor based upon 75SiO 2 :25PbF 2 host herein reported is a promising contender for white-light LED applications. - Highlights: ► White-light emission in double-doped activated phosphors employing UV-LED excitation. ► Luminescent features of europium, samarium, and terbium in nanocrystals dispersed in aluminosilicate glass. ► New nanocomposite phosphor host for white-light LED applications.

  6. Effect of annealing on structural and optical properties of Cu_2ZnSnS_4 thin films grown by pulsed laser deposition

    International Nuclear Information System (INIS)

    Surgina, G.D.; Nevolin, V.N.; Sipaylo, I.P.; Teterin, P.E.; Medvedeva, S.S.; Lebedinsky, Yu.Yu.; Zenkevich, A.V.

    2015-01-01

    In this work, we compare the effect of different types of thermal annealing on the morphological, structural and optical properties of Cu_2ZnSnS_4 (CZTS) thin films grown by reactive Pulsed Laser Deposition in H_2S flow. Rutherford backscattering spectrometry, atomic force microscopy, X-ray diffraction, Raman spectroscopy and optical spectrophotometry data reveal dramatic increase of the band gap and the crystallite size without the formation of secondary phases upon annealing in N_2 at the optimized conditions. - Highlights: • Cu_2ZnSnS_4 (CZTS) thin films were grown at room temperature. • Reactive Pulsed Laser Deposition in H_2S flow was used as a growth method. • Effect of annealing conditions on CZTS structural and optical properties is revealed. • Both the grain size and the band gap of CZTS film increase following the annealing. • Annealing in N_2 effectively inhibits the formation of Sn_xS secondary phases.

  7. Effects of the annealing duration of the ZnO buffer layer on structural and optical properties of ZnO rods grown by a hydrothermal process

    Energy Technology Data Exchange (ETDEWEB)

    Shin, C.M.; Lee, J.Y.; Heo, J.H.; Park, J.H.; Kim, C.R. [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Ryu, H., E-mail: hhryu@inje.ac.kr [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Chang, J.H. [Major of Nano Semiconductor, Korea Maritime University, 1 Dongsam-dong, Yeongdo-Ku, Busan 606-791 (Korea, Republic of); Son, C.S. [Department of Electronic Materials Engineering, Silla University, Gwaebeop-dong, Sasang-gu, Busan 617-736 (Korea, Republic of); Lee, W.J. [Department of Nano Engineering, Dong-Eui University, 995 Eomgwangno, Busanjin-gu, Busan 614-714 (Korea, Republic of); Tan, S.T. [Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); Zhao, J.L. [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore); Sun, X.W. [Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore)

    2009-07-30

    In this study, the effects of the annealing duration of a zinc oxide (ZnO) buffer layer on structural and optical properties of ZnO rods grown by a hydrothermal process are discussed. A ZnO buffer layer was deposited on p-type Si (1 1 1) substrates by the metal organic chemical vapor deposition (MOCVD) method. After that, ZnO rods were grown on the ZnO-buffer/Si (1 1 1) substrate by a hydrothermal process. In order to determine the optimum annealing duration of the buffer layer for the growth of ZnO rods, durations ranging from 0.5 to 30 min were tried. The morphology and crystal structure of the ZnO/ZnO-buffer/Si (1 1 1) were measured by field emission scanning electron microscopy (FE-SEM) and x-ray diffraction (XRD). The optical properties were investigated by photoluminescence (PL) measurement.

  8. A Systematic Study of the Relationship among the Morphological, Structural and Photoelectrochemical Properties of ZnO Nanorods Grown Using the Microwave Chemical Bath Deposition Method

    Energy Technology Data Exchange (ETDEWEB)

    Oh, Sungjin; Ryu, Hyukhyun [Inje University, Gimhae (Korea, Republic of); Lee, Won-Jae [Dong-Eui University, Busan (Korea, Republic of)

    2017-08-15

    In this study, zinc oxide (ZnO) nanostructures were grown on a ZnO seed layer/fluorine-doped tin oxide (FTO) substrate for different growth durations ranging from 5 to 40 min using the microwave chemical bath deposition method. We studied the effect of growth duration on the morphological, structural, optical and photoelectrochemical properties of the ZnO nanostructures. From this study, we found that the photoelectrochemical properties of the ZnO nanostructures were largely affected by their morphological and structural properties. As a result, we obtained the highest photocurrent density of 0.46 mA/cm{sup 2} (at 1.5 V vs. SCE) from the sample grown for 30 min.

  9. Temperature dependence of optical transitions in Al xGa1-xAs/GaAs quantum well structures grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Caballero-Rosas, A.; Mejia-Garcia, C.; Contreras-Puente, G.; Lopez-Lopez, M.

    2005-01-01

    Quantum well (QW) structures of Al x Ga 1-x As/GaAs were characterized by photoluminescence technique as a function of the temperature between 10 and 300 K. The structures were grown on a 500 nm thick GaAs buffer layer with Molecular Beam Epitaxy technique. We have studied the properties of in-situ Cl 2 -etched GaAs surfaces and overgrown QW structures as a function of the etching temperature (70 and 200 deg. C). Several models were used to fit the experimental points. Best fit to experimental points was obtained with the Paessler model

  10. Structural characteristics and physical properties of diortho(pyro)silicate crystals of lanthanides yttrium and scandium grown by the Czochralski technique

    Energy Technology Data Exchange (ETDEWEB)

    Anan' eva, G.V.; Karapetyan, V.E.; Korovkin, A.M.; Merkulyaeva, T.I.; Peschanskaya, I.A.; Savinova, I.P.; Feofilov, P.P. (Gosudarstvennyj Opticheskij Inst., Leningrad (USSR))

    1982-03-01

    Optically uniform monocrystals of diortho (pyro) silicates of lanthanides, yttrium, and scandium were grown by the Czochralski technique. Four structural types of Ln/sub 2/(Si/sub 2/O/sub 7/) crystals were determined by the roentgenographic method. The presence of structural subgroups was also supported by the method of spectroscopic probes. Structural parameters were determined and data on certain physical properties (fusion temperature, density, refractive indices, transparency) of investigated crystals were presented. The generation of induced emission at lambda=1.057 ..mu..m was obtained in La/sub 2/(Si/sub 2/O/sub 7/)-Nd/sup 3 +/ crystal.

  11. Structural and electrical properties of Ge(111) films grown on Si(111) substrates and application to Ge(111)-on-Insulator

    Energy Technology Data Exchange (ETDEWEB)

    Sawano, K., E-mail: sawano@tcu.ac.jp [Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Setagaya-ku, Tokyo (Japan); Hoshi, Y.; Kubo, S. [Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Setagaya-ku, Tokyo (Japan); Arimoto, K.; Yamanaka, J.; Nakagawa, K. [Center for Crystal Science and Technology, University of Yamanashi, 7 Miyamae-cho, Kofu (Japan); Hamaya, K. [Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka (Japan); Miyao, M. [Department of Electronics, Kyushu University, 744 Motooka, Fukuoka (Japan); Shiraki, Y. [Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Setagaya-ku, Tokyo (Japan)

    2016-08-31

    Structural and electrical properties of a Ge(111) layer directly grown on a Si(111) substrate are studied. Via optimized two-step growth manner, we form a high-quality relaxed Ge layer, where strain-relieving dislocations are confined close to a Ge/Si interface. Consequently, a density of holes, which unintentionally come from crystal defects, is highly suppressed below 4 × 10{sup 16} cm{sup −3}, which leads to significantly high hole Hall mobility exceeding 1500 cm{sup 2}/Vs at room temperature. By layer transfer of the grown Ge layer, we also fabricate a Ge(111)-on-Insulator, which is a promising template for high-performance Ge-based electronic and photonic devices. - Highlights: • A high-quality Ge layer is epitaxially grown on a Si(111) by two-step growth manner. • Growth conditions, such as growth temperatures, are optimized. • Very high hole mobility is obtained from Ge(111) grown on Si(111). • High-quality thin Ge-on-Insulator with (111) orientation is obtained.

  12. A Comparative Study on Structural and Optical Properties of ZnO Micro-Nanorod Arrays Grown on Seed Layers Using Chemical Bath Deposition and Spin Coating Methods

    Directory of Open Access Journals (Sweden)

    Sibel MORKOÇ KARADENİZ

    2016-11-01

    Full Text Available In this study, Zinc Oxide (ZnO seed layers were prepared on Indium Tin Oxide (ITO substrates by using Chemical Bath Deposition (CBD method and Sol-gel Spin Coating (SC method. ZnO micro-nanorod arrays were grown on ZnO seed layers by using Hydrothermal Synthesis method. Seed layer effects of structural and optical properties of ZnO arrays were characterized. X-ray diffractometer (XRD, Scanning Electron Microscopy (SEM and Ultraviolet Visible (UV-Vis Spectrometer were used for analyses. ZnO micro-nanorod arrays consisted of a single crystalline wurtzite ZnO structure for each seed layer. Besides, ZnO rod arrays were grown smoothly and vertically on SC seed layer, while ZnO rod arrays were grown randomly and flower like structures on CBD seed layer. The optical absorbance peaks found at 422 nm wavelength in the visible region for both ZnO arrays. Optical bandgap values were determined by using UV-Vis measurements at 3.12 and 3.15 eV for ZnO micro-nanorod arrays on CBD seed layer and for ZnO micro-nanorod arrays on SC-seed layer respectively.DOI: http://dx.doi.org/10.5755/j01.ms.22.4.13443

  13. Effect of SHI irradiation on structural, surface morphological and optical studies of CVT grown ZnSSe single crystals

    International Nuclear Information System (INIS)

    Kannappan, P.; Asokan, K.; Krishna, J.B.M.; Dhanasekaran, R.

    2013-01-01

    Highlights: •CVT grown ZnSSe single crystals were irradiated with 120 MeV Au ion. •The GIXRD results show the FWHM increases with increasing ion fluency. •The AFM study show the surface roughness increases with ion fluency. •The optical band gap energy vary with increasing ion fluency. •The PL emission decreases with increasing ion fluency. -- Abstract: The ZnSSe single crystals grown by chemical vapour transport (CVT) method have been irradiated by 120 MeV Au 9+ ions at room temperature with fluences of 1 × 10 12 and 5 × 10 12 ions/cm 2 . The grazing incidence X-ray diffraction (GIXRD) results show that the full width at half maximum (FWHM) value for the as grown ZnSSe crystal is 0.215°; and for the irradiated samples, the FWHM values are 0.413° and 0.625°, with the increase of ion fluences. The atomic force microscopy (AFM) studies reveal the formation of the pits and islands due to irradiation. The optical absorption cut off wavelength is found to be 441 nm for as grown ZnSSe crystal. The cut off values are increased to 447 nm and 457 nm for the irradiated samples with increasing ion fluency. The photoluminescence studies show the emission for the as grown ZnSSe is 590 nm whereas for the irradiated samples in the emission range it is 580–590 nm and 575–595 nm due to SHI irradiation. FT-Raman spectra analysis has been made for the ZnSSe single crystals and irradiated samples. The results are discussed in detail

  14. Effect of SHI irradiation on structural, surface morphological and optical studies of CVT grown ZnSSe single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Kannappan, P. [Crystal Growth Centre, Anna University, Chennai 600 025 (India); Asokan, K. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067 (India); Krishna, J.B.M. [UGC-DAE Consortium for Scientific Research, III-/LB-8, Bidhan nagar, Kolkata 700 098 (India); Dhanasekaran, R., E-mail: rdcgc@yahoo.com [Crystal Growth Centre, Anna University, Chennai 600 025 (India)

    2013-12-15

    Highlights: •CVT grown ZnSSe single crystals were irradiated with 120 MeV Au ion. •The GIXRD results show the FWHM increases with increasing ion fluency. •The AFM study show the surface roughness increases with ion fluency. •The optical band gap energy vary with increasing ion fluency. •The PL emission decreases with increasing ion fluency. -- Abstract: The ZnSSe single crystals grown by chemical vapour transport (CVT) method have been irradiated by 120 MeV Au{sup 9+} ions at room temperature with fluences of 1 × 10{sup 12} and 5 × 10{sup 12} ions/cm{sup 2}. The grazing incidence X-ray diffraction (GIXRD) results show that the full width at half maximum (FWHM) value for the as grown ZnSSe crystal is 0.215°; and for the irradiated samples, the FWHM values are 0.413° and 0.625°, with the increase of ion fluences. The atomic force microscopy (AFM) studies reveal the formation of the pits and islands due to irradiation. The optical absorption cut off wavelength is found to be 441 nm for as grown ZnSSe crystal. The cut off values are increased to 447 nm and 457 nm for the irradiated samples with increasing ion fluency. The photoluminescence studies show the emission for the as grown ZnSSe is 590 nm whereas for the irradiated samples in the emission range it is 580–590 nm and 575–595 nm due to SHI irradiation. FT-Raman spectra analysis has been made for the ZnSSe single crystals and irradiated samples. The results are discussed in detail.

  15. Defect attributed variations of the photoconductivity and photoluminescence in the HVPE and MOCVD as-grown and irradiated GaN structures

    International Nuclear Information System (INIS)

    Gaubas, E.; Pobedinskas, P.; Vaitkus, J.; Uleckas, A.; Zukauskas, A.; Blue, A.; Rahman, M.; Smith, K.M.; Aujol, E.; Beaumont, B.; Faurie, J.-P.; Gibart, P.

    2005-01-01

    The effect of native and radiation induced defects on the photoconductivity transients and photoluminescence spectra have been examined in GaN epitaxial layers of 2.5 and 12μm thickness grown on bulk n-GaN/sapphire substrates by metal-organic chemical vapor deposition (MOCVD). For comparison, free-standing GaN as-grown samples of 500μm thickness, fabricated by hydride vapor phase epitaxy (HVPE), were investigated. Manifestation of defects induced by 10-keV X-ray irradiation with the dose of 600Mrad and 100-keV neutrons with the fluences of 5x10 14 and 10 16 cm -2 as well as of 24GeV/c protons with fluence 10 16 cm -2 have been revealed through contact photoconductivity and microwave absorption transients. The amplitude of the initial photoconductivity decay is significantly reduced by the native and radiation defects density. Synchronous decrease of the steady-state PL intensity of yellow, blue and ultraviolet bands peaked at 2.18, 2.85, and 3.42eV, respectively, with density of radiation-induced defects is observed. The decrease of the PL intensity is accompanied by an increase of asymptotic decay lifetime in the photoconductivity transients, which is due to excess-carrier multi-trapping. The decay fits the stretched exponent approximation exp[-(t/τ) α ] with the different factors α in as-grown material (α∼0.7) and irradiated samples (α∼0.3). The fracton dimension d s of disordered structure changes from 4.7 to 0.86 for as-grown and irradiated material, respectively, and it implies the percolative carrier motion on an infinite cluster of dislocations net in the as-grown material and cluster fragmentation into finite fractons after irradiations

  16. XAFS Analysis of Local Structure around Ce in Ca3Sc2Si3O12:Ce Phosphor for White LEDs

    International Nuclear Information System (INIS)

    Akai, Toshio; Shigeiwa, Motoyuki; Okamoto, Kaoru; Shimomura, Yasuo; Kijima, Naoto; Honma, Tetsuo

    2007-01-01

    We have studied the local structure around Ce atom in Ca3Sc2Si3O12 host crystal, which has been developed as a new green phosphor for white light emitting diodes (LEDs). As the local structure and chemical environment of the dopant atom are very important to improve the performance of the phosphor, we have used XAFS to get chemical and structural information around the Ce dopant. The XANES spectrum of the Ce LIII-edge reveals that the Ce atom is trivalent in Ca3Sc2Si3O12. There are two kinds of possible Ce substitution sites, Ca site and Sc site, in garnet type Ca3Sc2Si3O12 crystal structure. The Ce atom is found to be at the Ca site in the host crystal by the comparison of the Fourier transform of Ce K-edge EXAFS spectrum with those of Ca and Sc K-edge EXAFS spectra. The theoretical analysis with FEFF also clarified the Ce substitution at the Ca site. Furthermore, the result of the analysis indicates the structural disorder around Ca and Si atoms at 3.75 A. It is possible that there are some defects around the Ca and Si atoms at 3.75 A to compensate the excess positive charge by introduced Ce3+ at the Ca2+ site

  17. Crystalline structure and XMCD studies of Co40Fe40B20 grown on Bi2Te3, BiTeI and Bi2Se3

    OpenAIRE

    Kaveev, A. K.; Sokolov, N. S.; Suturin, S. M.; Zhiltsov, N. S.; Golyashov, V. A.; Tereshchenko, O. E.; Prosvirin, I. P.; Kokh, K. A.; Sawada, M.

    2018-01-01

    Epitaxial films of Co40Fe40B20 (further - CoFeB) were grown on Bi2Te3(001) and Bi2Se3(001) substrates by laser molecular beam epitaxy (LMBE) technique at 200-400C. Bcc-type crystalline structure of CoFeB with (111) plane parallel to (001) plane of Bi2Te3 was observed, in contrast to polycrystalline CoFeB film formed on Bi2Se3(001) at RT using high-temperature seeding layer. Therefore, structurally ordered ferromagnetic thin films were obtained on the topological insulator surface for the firs...

  18. Observation of apparent MOS regimes on Al/PECVD grown boron nitride/p-c-Si/Al MIS structure, investigated through admittance spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Oezdemir, Orhan [Yildiz Technical University, Department of Physics, Esenler, istanbul (Turkey)

    2009-02-15

    PECVD grown boron nitride (BN) on crystalline silicon (c-Si) semiconductor was investigated by admittance measurement in the form of metal/insulator/semiconductor (MIS) structure. Apart from well-known regimes of traditional MOS structure, gradual bypassing of depletion layer was observed once ambient temperature (frequency) increased (decreased). Such an anomalous behavior was interpreted through modulations of charges located within BN film and/or at the interfacial layer of BN film/c-Si junction in terms of weighted average concept. (author)

  19. Stimulated emission at 2.8 μm from Hg-based quantum well structures grown by photoassisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Giles, N.C.; Yang, Z.; Han, J.W.; Cook, J.W. Jr.; Schetzina, J.F.

    1990-01-01

    We report the first observation of stimulated emission from Hg-based quantum well structures in which the active region is a HgCdTe superlattice. The laser structures were grown on (100) CdZnTe substrates by photoassisted molecular beam epitaxy. Cleaved laser cavities were optically pumped using the 1.06 μm output from a continuous wave Nd:YAG laser. Stimulated emission cavity modes were seen at cw laser power densities as low as 3.4 kW/cm 2 and at temperatures ≥60 K

  20. Micro-light-emitting diodes with III–nitride tunnel junction contacts grown by metalorganic chemical vapor deposition

    KAUST Repository

    Hwang, David

    2017-12-13

    Micro-light-emitting diodes (µLEDs) with tunnel junction (TJ) contacts were grown entirely by metalorganic chemical vapor deposition. A LED structure was grown, treated with UV ozone and hydrofluoric acid, and reloaded into the reactor for TJ regrowth. The silicon doping level of the n++-GaN TJ was varied to examine its effect on voltage. µLEDs from 2.5 × 10−5 to 0.01 mm2 in area were processed, and the voltage penalty of the TJ for the smallest µLED at 20 A/cm2 was 0.60 V relative to that for a standard LED with indium tin oxide. The peak external quantum efficiency of the TJ LED was 34%.

  1. Micro-light-emitting diodes with III–nitride tunnel junction contacts grown by metalorganic chemical vapor deposition

    KAUST Repository

    Hwang, David; Mughal, Asad J.; Wong, Matthew S.; Alhassan, Abdullah I.; Nakamura, Shuji; DenBaars, Steven P.

    2017-01-01

    Micro-light-emitting diodes (µLEDs) with tunnel junction (TJ) contacts were grown entirely by metalorganic chemical vapor deposition. A LED structure was grown, treated with UV ozone and hydrofluoric acid, and reloaded into the reactor for TJ regrowth. The silicon doping level of the n++-GaN TJ was varied to examine its effect on voltage. µLEDs from 2.5 × 10−5 to 0.01 mm2 in area were processed, and the voltage penalty of the TJ for the smallest µLED at 20 A/cm2 was 0.60 V relative to that for a standard LED with indium tin oxide. The peak external quantum efficiency of the TJ LED was 34%.

  2. Structural and optical properties of nano-structured tungsten-doped ZnO thin films grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Ngom, B.D. [African Laser Centre, CSIR campus, P.O. Box 395, Pretoria (South Africa); Groupes de Laboratoires de physique des Solides et Sciences des Materiaux, Faculte des sciences et Techniques Universite Cheikh Anta Diop de Dakar (UCAD), B.P. 25114 Dakar-Fann Dakar (Senegal); NANO-Sciences Laboratories, Materials Research Group, iThemba LABS, National Research Foundation (South Africa)], E-mail: bdngom@tlabs.ac.za; Mpahane, T. [NANO-Sciences Laboratories, Materials Research Group, iThemba LABS, National Research Foundation (South Africa); Manyala, N. [Department of Physics and Electronics National University of Lesotho (Lesotho); Nemraoui, O. [NANO-Sciences Laboratories, Materials Research Group, iThemba LABS, National Research Foundation (South Africa); Buttner, U. [Engineering Department, University of Stellenbosch (South Africa); Kana, J.B. [Department of Physique University of Yaounde 1 (Cameroon); Fasasi, A.Y. [Centre for Energy Research and Development, Obafemi Awolowo University, Ile-Ife, Osun State (Nigeria); Maaza, M. [African Laser Centre, CSIR campus, P.O. Box 395, Pretoria (South Africa); NANO-Sciences Laboratories, Materials Research Group, iThemba LABS, National Research Foundation (South Africa); Beye, A.C. [African Laser Centre, CSIR campus, P.O. Box 395, Pretoria (South Africa); Groupes de Laboratoires de physique des Solides et Sciences des Materiaux, Faculte des sciences et Techniques Universite Cheikh Anta Diop de Dakar (UCAD), B.P. 25114 Dakar-Fann Dakar (Senegal)

    2009-01-15

    Novel highly c-oriented tungsten-doped zinc oxide (WZO) thin films with 1 wt% were grown by pulsed laser deposition (PLD) technique on corning 1737F glass substrate. The effects of laser energy on the structural, morphological as well as optical transmission properties of the films were studied. The films were highly transparent with average transmittance exceeding 87% in the wavelength region lying between 400 and 2500 nm. X-ray diffraction analysis (XRD) results indicated that the WZO films had c-axis preferred orientation with wurtzite structure. Film thickness and the full width at half maximum (FWHM) of the (0 0 2) peaks of the films were found to be dependent on laser fluence. The composition determined through Rutherford backscattering spectroscopy (RBS) appeared to be independent of the laser fluence. By assuming a direct band gap transition, the band gap values of 3.36, 3.34 and 3.31 eV were obtained for corresponding laser fluence of 1, 1.7 and 2.7 J cm{sup -2}, respectively. Compared with the reported undoped ZnO band gap value of 3.37 eV, it is conjectured that the observed low band gap values obtained in this study may be attributable to tungsten incorporation in the films as well as the increase in laser fluence. The high transparency makes the films useful as optical windows while the high band gap values support the idea that the films could be good candidates for optoelectronic applications.

  3. Optical and structural properties of ZnO nanorods grown on graphene oxide and reduced graphene oxide film by hydrothermal method

    Energy Technology Data Exchange (ETDEWEB)

    Alver, U., E-mail: alver@ksu.edu.tr [Department of Physics, Kahramanmaras Sutcu Imam University, K. Maras 46100 (Turkey); Zhou, W.; Belay, A.B. [Nanoscience and Technology Center, University of Central Florida, Orlando, FL 32816 (United States); Florida Solar Energy Center, Cocoa, FL 32922 (United States); Krueger, R. [Nanoscience and Technology Center, University of Central Florida, Orlando, FL 32816 (United States); Davis, K.O.; Hickman, N.S. [Nanoscience and Technology Center, University of Central Florida, Orlando, FL 32816 (United States); Florida Solar Energy Center, Cocoa, FL 32922 (United States)

    2012-01-15

    ZnO nanorods were grown on graphene oxide (GO) and reduced graphene oxide (RGO) films with seed layers by using simple hydrothermal method. The GO films were deposited by spray coating and then annealed at 400 Degree-Sign C in argon atmosphere to obtain RGO films. The optical and structural properties of the ZnO nanorods were systematically studied by scanning electron microscopy (SEM), X-ray diffraction (XRD) and ultraviolet-visible spectroscopy. The XRD patterns and SEM images show that without a seed layer, no ZnO nanorod deposition occurs on GO or RGO films. Transmittance of ZnO nanorods grown on RGO films was measured to be approximately 83% at 550 nm. Furthermore, while transmittance of RGO films increases with ZnO nanorod deposition, transmittance of GO decreases.

  4. Multilayer epitaxial graphene grown on the (SiC 000 1-bar ) surface; structure and electronic properties

    International Nuclear Information System (INIS)

    Sprinkle, M; Hicks, J; Tinkey, H; Clark, M C; Hass, J; Conrad, E H; Tejeda, A; Taleb-Ibrahimi, A; Le Fevre, P; Bertran, F; Soukiassian, P; Martinotti, D

    2010-01-01

    We review the progress towards developing epitaxial graphene as a material for carbon electronics. In particular, we discuss improvements in epitaxial graphene growth, interface control and the understanding of multilayer epitaxial graphene's (MEG's) electronic properties. Although graphene grown on both polar faces of SiC will be discussed, our discussions will focus on graphene grown on the (0 0 0 1-bar ) C-face of SiC. The unique properties of C-face MEG have become apparent. These films behave electronically like a stack of nearly independent graphene sheets rather than a thin Bernal stacked graphite sample. The origins of multilayer graphene's electronic behaviour are its unique highly ordered stacking of non-Bernal rotated graphene planes. While these rotations do not significantly affect the inter-layer interactions, they do break the stacking symmetry of graphite. It is this broken symmetry that leads to each sheet behaving like isolated graphene planes.

  5. Structural and Morphological Difference Between Ti/TiN/TiCN Coatings Grown in Multilayer and Graded Form

    International Nuclear Information System (INIS)

    Restrepo, E.; Baena, A.; Agudelo, C.; Castillo, H.; Devia, A.; Marino, A.

    2006-01-01

    Thin films can be grown in super-lattice, multilayers and graded form, having each one advantages and disadvantages. The difference between multilayer and graded coatings is the interface. In multilayers the interface is abrupt and in graded coatings it is diffuse. The interface influences many chemical and physical properties of the materials, and its choice depends on the application. Graded coatings have the advantage of having gradual properties such as thermal expansion coefficient and lattice parameter, avoiding adherence problems due to good match between their component materials. In this work the comparison between some properties of coatings grown as multilayer and graded is performed. The materials are produced using the sputtering DC technique because of its facility to control the deposition parameters and generate a slow growth. The target is a disc of titanium and the samples are made of stainless steel 304. The working gases are argon, nitrogen and methane, which are mixed according to the material to be produced, i.e. Ti layer is grown with argon, the TiN film is produced with a mixture of argon and nitrogen, and the TiCN material is obtained mixing argon, nitrogen and methane. These materials are characterized with AFM in order to determine grain size and with XPS studying the chemical composition and performing depth profiles

  6. Impact of deposition temperature on the properties of SnS thin films grown over silicon substrate—comparative study of structural and optical properties with films grown on glass substrates

    Science.gov (United States)

    Assili, Kawther; Alouani, Khaled; Vilanova, Xavier

    2017-11-01

    Tin sulfide (SnS) thin films were chemically deposited over silicon substrate in a temperature range of 250 °C-400 °C. The effects of deposition temperature on the structural, morphological and optical properties of the films were evaluated. All films present an orthorhombic SnS structure with a preferred orientation along (040). High absorption coefficients (in the range of 105 cm-1) were found for all obtained films with an increase in α value when deposition temperature decreases. Furthermore, the effects of substrate type were investigated based on comparison between the present results and those obtained for SnS films grown under the same deposition conditions but over glass substrate. The results suggest that the formation of SnS films onto glass substrate is faster than onto silicon substrate. It is found that the substrate nature affects the orientation growth of the films and that SnS films deposited onto Si present more defects than those deposited onto glass substrate. The optical transmittance is also restricted by the substrate type, mostly below 1000 nm. The obtained results for SnS films onto silicon suggest their promising integration within optoelectronic devices.

  7. Physical, thermal, structural and optical properties of Dy{sup 3+} doped lithium alumino-borate glasses for bright W-LED

    Energy Technology Data Exchange (ETDEWEB)

    Pawar, P.P.; Munishwar, S.R.; Gautam, S.; Gedam, R.S., E-mail: rupesh_gedam@rediffmail.com

    2017-03-15

    Rare earth (RE) doped glasses have potential applications due to their emission efficiencies of 4f–4 f and 4f–5d electronic transitions. Among all the rare earths, Dy{sup 3+} doped glasses have drawn much interest among the researchers for their intense emission in the visible region from 470 to 500 nm and around 570 to 600 nm. The physical, thermal, structural and optical properties of Dy{sup 3+} doped lithium alumino-borate glasses (LABD glasses) have been studied for white LED (W-LED) application. The glasses were synthesized by conventional melt quench technique. X-ray diffraction spectra revealed the amorphous nature of the glass sample. An FTIR spectrum was carried out to study the glass structure and various functional groups present in the LABD glasses. Optical absorption spectra were recorded by UV–vis-NIR spectrometer. Allowed direct and indirect band gaps were obtained by Tauc's plot. Thermal parameters like glass thermal stability (∆T), Hruby's parameter (K{sub gl}), etc. were calculated by DTA graph. Photoluminescence excitation and emission spectra's were measured at room temperature. The emission spectra shows two intense emission bands at around 482 nm (blue) and 574 nm (yellow) corresponds to the {sup 4}F{sub 9/2}→{sup 6}H{sub 15/2} and {sup 4}F{sub 9/2}→{sup 6}H{sub 13/2} transitions respectively along with one feeble band at 662 nm (red) corresponds to {sup 4}F{sub 9/2}→{sup 6}H{sub 11/2} transition. The CIE chromaticity co-ordinates were calculated for all glass samples. CIE chromaticity diagram shows glass LABD-4 containing 0.5 mol% Dy{sub 2}O{sub 3} with colour co-ordinates X = 0.34 and Y = 0.38 have highest emission intensity. These glasses having emission in the white region and thus can be used for bright white LED.

  8. The influence of growth parameters on the structure and composition of CuGaS{sub 2} epilayers grown by MOVPE

    Energy Technology Data Exchange (ETDEWEB)

    Branch, M.S. [Physics Department, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa)]. E-mail: Matthew.Branch@nmmu.ac.za; Berndt, P.R. [Physics Department, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Leitch, A.W.R. [Physics Department, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Botha, J.R. [Physics Department, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Weber, J. [Institute for Low Temperature Physics, University of Technology, D-01062 Dresden (Germany)

    2006-04-01

    The influence of various growth parameters on the composition and structure of MOVPE-grown CuGaS{sub 2} is presented. The Cu content of the grown layers is shown to decrease in the direction of the carrier gas flow, whilst the Ga and S content are shown to increase. Changing the flow of Cu(hfac){sub 2}.Et{sub 3}N to vary the I/III ratio in the vapour phase has a greater effect on the composition of grown epilayers than changing the flow of TEGa. This is indicative of Cu being the minority species present at the growth interface. A larger rate of decrease in the Cu content with an increase in both TEGa and DtBS flows suggests pre-reactions between Cu(hfac){sub 2}.Et{sub 3}N and both TEGa and DtBS precursors. Lower substrate temperatures are suggested to be thermodynamically unfavourable for the growth of CuGaS{sub 2}, yet enhance the formation of Ga{sub x}S{sub y} phases. The surface morphology of Cu-rich layers are typically inferior with a high density of crystallites, whilst Cu-poor epilayers are characteristically smooth with a single XRD reflection attributed to the (004) plane of c-axis-orientated epitaxial material.

  9. Influence of deposition temperature on the structural and morphological properties of Be{sub 3}N{sub 2} thin films grown by reactive laser ablation

    Energy Technology Data Exchange (ETDEWEB)

    Chale-Lara, F., E-mail: fabio_chale@yahoo.com.mx [Centro de Investigacion Cientifica y de Educacion Superior de Ensenada, Apartado Postal 2681, Ensenada, Baja California, C.P. 22860 (Mexico); Centro de Nanociencias y Nanotecnologia, Universidad Nacional Autonoma de Mexico, Apartado Postal 14, Ensenada CP 22860, Baja California (Mexico); Centro de Investigacion en Ciencia Aplicada y Tecnologia Avanzada-IPN, Unidad Altamira, Km. 14.5 Carretera Tampico-Puerto Industrial, Altamira, Tamaulipas (Mexico); Farias, M.H.; De la Cruz, W. [Centro de Nanociencias y Nanotecnologia, Universidad Nacional Autonoma de Mexico, Apartado Postal 14, Ensenada CP 22860, Baja California (Mexico); Zapata-Torres, M. [Centro de Investigacion en Ciencia Aplicada y Tecnologia Avanzada-IPN, Legaria 694, Col. Irrigacion, Del. Miguel Hidalgo, Mexico D.F. (Mexico)

    2010-10-01

    Be{sub 3}N{sub 2} thin films have been grown on Si(1 1 1) substrates using the pulsed laser deposition method at different substrate temperatures: room temperature (RT), 200 deg. C, 400 deg. C, 600 deg. C and 700 deg. C. Additionally, two samples were deposited at RT and were annealed after deposition in situ at 600 deg. C and 700 deg. C. In order to obtain the stoichiometry of the samples, they have been characterized in situ by X-ray photoelectron (XPS) and reflection electron energy loss spectroscopy (REELS). The influence of the substrate temperature on the morphological and structural properties of the films was investigated using scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray diffraction (XRD). The results show that all prepared films presented the Be{sub 3}N{sub 2} stoichiometry. Formation of whiskers with diameters of 100-200 nm appears at the surface of the films prepared with a substrate temperature of 600 deg. C or 700 deg. C. However, the samples grown at RT and annealed at 600 deg. C or 700 deg. C do not show whiskers on the surface. The average root mean square (RMS) roughness and the average grain size of the samples grown with respect the substrate temperature is presented. The films grown with a substrate temperature between the room temperature to 400 deg. C, and the sample annealed in situ at 600 deg. C were amorphous; while the {alpha}Be{sub 3}N{sub 2} phase was presented on the samples with a substrate temperature of 600 deg. C, 700 deg. C and that deposited with the substrate at RT and annealed in situ at 700 deg. C.

  10. Influence of deposition temperature on the structural and morphological properties of Be3N2 thin films grown by reactive laser ablation

    International Nuclear Information System (INIS)

    Chale-Lara, F.; Farias, M.H.; De la Cruz, W.; Zapata-Torres, M.

    2010-01-01

    Be 3 N 2 thin films have been grown on Si(1 1 1) substrates using the pulsed laser deposition method at different substrate temperatures: room temperature (RT), 200 deg. C, 400 deg. C, 600 deg. C and 700 deg. C. Additionally, two samples were deposited at RT and were annealed after deposition in situ at 600 deg. C and 700 deg. C. In order to obtain the stoichiometry of the samples, they have been characterized in situ by X-ray photoelectron (XPS) and reflection electron energy loss spectroscopy (REELS). The influence of the substrate temperature on the morphological and structural properties of the films was investigated using scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray diffraction (XRD). The results show that all prepared films presented the Be 3 N 2 stoichiometry. Formation of whiskers with diameters of 100-200 nm appears at the surface of the films prepared with a substrate temperature of 600 deg. C or 700 deg. C. However, the samples grown at RT and annealed at 600 deg. C or 700 deg. C do not show whiskers on the surface. The average root mean square (RMS) roughness and the average grain size of the samples grown with respect the substrate temperature is presented. The films grown with a substrate temperature between the room temperature to 400 deg. C, and the sample annealed in situ at 600 deg. C were amorphous; while the αBe 3 N 2 phase was presented on the samples with a substrate temperature of 600 deg. C, 700 deg. C and that deposited with the substrate at RT and annealed in situ at 700 deg. C.

  11. Structural, microstructural and transport properties study of lanthanum lithium titanium perovskite thin films grown by Pulsed Laser Deposition

    International Nuclear Information System (INIS)

    Maqueda, O.; Sauvage, F.; Laffont, L.; Martinez-Sarrion, M.L.; Mestres, L.; Baudrin, E.

    2008-01-01

    Lanthanum lithium titanate thin films were grown by Pulsed Laser Deposition. La 0.57 Li 0.29 TiO 3 dense films with smooth surfaces were obtained after optimization of the growth parameters. Such films deposited at 700 deg. C under 15 Pa are nano-crystalline with domains corresponding to the cubic and tetragonal modifications of this phase. In relation to the measured conductivities/activation energy and to previous works, we clearly underlined that the films of practical interest, prepared at relatively low temperature, are predominantly formed from the tetragonal ordered phase

  12. Structural properties of layers of HgCdTe, grown by the laser epitaxy method on silicon substrates

    International Nuclear Information System (INIS)

    Plyatsko, S.V.; Vergush, M.M.; Litvin, P.M.; Kozirjev, Yu.M.; Shevlyakov, S.A.

    2001-01-01

    Thin films (0.1-1.5 μm) of HgCdTe on substrates Si (100) and Si (111) from monocrystal and pressed sources Hg 1-x Cd x Te (x=0.22) sprayed by laser IR radiation were grown and are investigated. The concentration of macro defects (drops) on the surface of films is determined by the relation of the diameter of a laser beam and depth of the crater, formed by laser irradiation. The size of crystal grains almost does not depend on the temperature of a substrate and power densities of a laser radiation and increases with the thickness of a layer

  13. Structural characteristics of single crystalline GaN films grown on (111) diamond with AlN buffer

    DEFF Research Database (Denmark)

    Pécz, Béla; Tóth, Lajos; Barna, Árpád

    2013-01-01

    Hexagonal GaN films with the [0001] direction parallel to the surface normal were grown on (111) oriented single crystalline diamond substrates by plasma-assisted molecular beam epitaxy. Pre-treatments of the diamond surface with the nitrogen plasma beam, prior the nucleation of a thin AlN layer......, eliminated the inversion domains and reduced the density of threading dislocations in the GaN epilayers. The films have an in-plane epitaxial relationship [1010]GaN//[110]diamond. Thus GaN (0001) thin films of single epitaxial relationship and of single polarity were realised on diamond with AlN buffer....

  14. X-ray diffraction study of rare earth epitaxial structures grown by MBE onto (111) GaAs

    International Nuclear Information System (INIS)

    Bennett, W.R.; Farrow, R.F.C.; Parkin, S.S.P.; Marinero, E.E.; Segmuller, A.P.

    1989-01-01

    The authors report on the new epitaxial system LaF 3 /Er/Dy/Er/LaF 3 /GaAs(111) grown by molecular beam epitaxy. X-ray diffraction studies have been used to determine the epitaxial relationships between the rare earths, the LaF 3 and the substrate. Further studies of symmetric and asymmetric reflections yielded the in-plane and perpendicular strain components of the rare earth layers. Such systems may be used to probe the effects of magnetoelastic interactions and dimensionality on magnetic ordering in rare earth metal films

  15. Substrate Misorientation Effects On (A1,Ga)As And (Al,Ga)As/GaAs Structures Grown By Molecular Beam Epitaxy

    Science.gov (United States)

    Tsui, Raymond K.; Kramer, Gary D.; Curless, J. A.; Peffley, Marilyn S.

    1987-04-01

    (Al,Ga)As layers have rough surface morphologies when deposited under certain growth conditions in molecular beam epitaxy (MBE). This leads to poor interfaces between (A1,Ga)- As and GaAs and degraded performance in heterojunction devices. We have observed that by misorienting the substrate slightly from (100), in a manner specific to the growth conditions, smooth (Al,Ga)As layers 3-4 μm thick can be grown at a rate of ≍ 1 μm/h for various AlAs mole fractions, x. Similar conditions for nominal (100) result in a rough, textured morphology. Experiments were carried out using flat substrates of specific misorientations as well as lens-shaped substrates. The lenticular substrates allowed all orientations within 14° of (100) [i.e., out to (511)] to be evaluated in one growth run. Deposition conditions that were varied included x, substrate temperature, and V/III beam flux ratio. Smooth layers obtained using optimal misorientations showed superior optical characteris-tics as determined from low-temperature photoluminescence (PL) measurements. The 4.2K PL spectra of smooth layers exhibit well-resolved exciton-related peaks, and do not have the deeper-level defect-related peaks observed in the spectra of rough layers. Single quantum well structures with A10.3Ga0.7As barriers and a 100 A-wide GaAs well deposited on mis-oriented substrates also have superior optical properties compared to a structure grown on nominal (100). Such findings may have significant implications for the performance of heterojunction device structures grown by MBE.

  16. Structural characterization of epitaxial LiFe_5O_8 thin films grown by chemical vapor deposition

    International Nuclear Information System (INIS)

    Loukya, B.; Negi, D.S.; Sahu, R.; Pachauri, N.; Gupta, A.; Datta, R.

    2016-01-01

    We report on detailed microstructural and atomic ordering characterization by transmission electron microscopy in epitaxial LiFe_5O_8 (LFO) thin films grown by chemical vapor deposition (CVD) on MgO (001) substrates. The experimental results of LFO thin films are compared with those for bulk LFO single crystal. Electron diffraction studies indicate weak long-range ordering in LFO (α-phase) thin films in comparison to bulk crystal where strong ordering is observed in optimally annealed samples. The degree of long-range ordering depends on the growth conditions and the thickness of the film. Annealing experiment along with diffraction study confirms the formation of α-Fe_2O_3 phase in some regions of the films. This suggests that under certain growth conditions γ-Fe_2O_3-like phase forms in some pockets in the as-grown LFO thin films that then convert to α-Fe_2O_3 on annealing. - Highlights: • Atomic ordering in LiFe_5O_8 bulk single crystal and epitaxial thin films. • Electron diffraction studies reveal different level of ordering in the system. • Formation of γ-Fe_2O_3 like phase has been observed.

  17. Structural and interfacial characteristics of thin (2 films grown by electron cyclotron resonance plasma oxidation on [100] Si substrates

    International Nuclear Information System (INIS)

    Nguyen, T.D.; Carl, D.A.; Hess, D.W.; Lieberman, M.A.; Gronsky, R.

    1991-04-01

    The feasibility of fabricating ultra-thin SiO 2 films on the order of a few nanometer thickness has been demonstrated. SiO 2 thin films of approximately 7 nm thickness have been produced by ion flux-controlled Electron Cyclotron Resonance plasma oxidation at low temperature on [100] Si substrates, in reproducible fashion. Electrical measurements of these films indicate that they have characteristics comparable to those of thermally grown oxides. The thickness of the films was determined by ellipsometry, and further confirmed by cross-sectional High-Resolution Transmission Electron Microscopy. Comparison between the ECR and the thermal oxide films shows that the ECR films are uniform and continuous over at least a few microns in lateral direction, similar to the thermal oxide films grown at comparable thickness. In addition, HRTEM images reveal a thin (1--1.5 nm) crystalline interfacial layer between the ECR film and the [100] substrate. Thinner oxide films of approximately 5 nm thickness have also been attempted, but so far have resulted in nonuniform coverage. Reproducibility at this thickness is difficult to achieve

  18. Core-shell structure of polypyrrole grown on V{sub 2}O{sub 5} nanoribbon as high performance anode material for supercapacitors

    Energy Technology Data Exchange (ETDEWEB)

    Qu, Qunting [New Energy and Materials Laboratory (NEML), Department of Chemistry and Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, Fudan University, Shanghai (China); School of Energy, Soochow University, Suzhou, Jiangsu (China); Zhu, Yusong; Gao, Xiangwen; Wu, Yuping [New Energy and Materials Laboratory (NEML), Department of Chemistry and Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, Fudan University, Shanghai (China)

    2012-08-15

    A core-shell structure of polypyrrole grown on V{sub 2}O{sub 5} nanoribbons as a high performance anode material for supercapacitors is fabricated using anionic dodecylbenzenesulfonate (DBS{sup -}) as surfactant. Benefiting from the nanoribbon morphology of V{sub 2}O{sub 5}, the improved charge-transfer and polymeric coating effect of PPy, PPy rate at V{sub 2}O{sub 5} nanocomposites exhibits high energy density, and excellent cycling and rate capability in K{sub 2}SO{sub 4} aqueous electrolyte. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  19. A multiple p-n junction structure obtained from as-grown Czochralski silicon crystals by heat treatment - Application to solar cells

    Science.gov (United States)

    Chi, J. Y.; Gatos, H. C.; Mao, B. Y.

    1980-01-01

    Multiple p-n junctions have been prepared in as-grown Czochralski p-type silicon through overcompensation near the oxygen periodic concentration maxima by oxygen thermal donors generated during heat treatment at 450 C. Application of the multiple p-n-junction configuration to photovoltaic energy conversion has been investigated. A new solar-cell structure based on multiple p-n-junctions was developed. Theoretical analysis showed that a significant increase in collection efficiency over the conventional solar cells can be achieved.

  20. Red-emitting LaOF:Eu{sup 3+} phosphors: Synthesis, structure and their Judd–Ofelt analysis for LED applications

    Energy Technology Data Exchange (ETDEWEB)

    Dhananjaya, N., E-mail: ndhananjayas@gmail.com [Department of Physics, B. M. S. Institute of Technology and Management, Bangalore 560064 (India); Shivakumara, C.; Saraf, Rohit [Solid State and Structural Chemistry Unit, Indian Institute of Science, Bangalore 560012 (India); Nagabhushana, H. [C. N. R. Rao Center for Advanced Materials, Tumkur University, Tumkur 572103 (India)

    2016-03-15

    Highlights: • Red-emitting LaOF:Eu{sup 3+} phosphors were synthesized via facile solid state route. • Judd–Ofelt intensity parameters and radiative properties were determined from PL data. • CIE color coordinates of LaOF:Eu{sup 3+} phosphor is close to the commercial red phosphors. • Eu{sup 3+}-activated LaOF phosphor is a potential candidate for the production of red component in white LEDs. - Abstract: In the present study, we have synthesized a series of La{sub 1−x}Eu{sub x}OF (0.01 ≤ x ≤ 0.09) phosphors by the conventional solid-state reaction route at relatively low temperature (500 °C) and shorter duration of 2 h. The compounds were crystallized in the rhombohedral structure with the space group R-3m (No. 166). Upon UV excitation (254 nm), the photoluminescence spectra exhibit characteristic luminescence {sup 5}D{sub 0} → {sup 7}F{sub J} (J = 1, 2, 3, and 4) intra-4f shell Eu{sup 3+} ion transitions. An intense red emission peak at 610 nm was observed due to electric dipole ({sup 5}D{sub 0} → {sup 7}F{sub 2}) transition. Judd–Ofelt theory was employed to evaluate various radiative parameters such as radiative emission rates, lifetime, branching and asymmetry ratios. CIE color coordinates confirmed the red emission of the phosphors. The luminescent results reveal that LaOF:Eu{sup 3+} phosphor can be used as potential candidate for developing red component in white LED applications.

  1. 3D periodic structures grown on silicon by radiation of a pulsed Nd:YAG laser and their field emission properties

    Energy Technology Data Exchange (ETDEWEB)

    Karabutov, A.V. [A.M. Prokhorov General Physics Institute of the Russian Academy of Sciences, 38 Vavilov Street, 119991 Moscow (Russian Federation); Shafeev, G.A. [A.M. Prokhorov General Physics Institute of the Russian Academy of Sciences, 38 Vavilov Street, 119991 Moscow (Russian Federation)]. E-mail: shafeev@kapella.gpi.ru; Badi, N. [Physics Department, The University of Houston, Houston, TX 77204-5005 (United States); Nair, A.M. [TcSAM, The University of Houston, Houston, TX 77204-5004 (United States); Bensaoula, A. [Physics Department, The University of Houston, Houston, TX 77204-5005 (United States)

    2006-04-30

    Periodic three-dimensional structures were successfully grown on single crystal Si wafers either bare or Au-covered under their exposure to a pulsed radiation of a Nd:YAG laser in vacuum. The structures protrude above the initial wafer surface for 10 {mu}m while their spatial period is about 70 {mu}m. The coupling of the laser radiation to Si surface is related to the thermal non-linear absorption of the near band gap radiation. The structures exhibit an efficient field emission with an average emission current of 5 mA/cm{sup 2} and is sensitive to the post-treatment of samples. The drawbacks of the emission current densities are discussed.

  2. LED-roulette : LED's vervangen balletje

    NARCIS (Netherlands)

    Goossens, P.

    2007-01-01

    Iedereen waagt wel eens een gokje, in een loterij of misschien ook in een casino. Wie droomt er immers niet van om op een gemakkelijke manier rijk te worden? Met de hier beschreven LED-roulette valt weliswaar weinig te winnen, maar het is wel een uitstekende manier om het roulettespel thuis te

  3. Effect of arbuscular mycorrhizal fungi on plant biomass and the rhizosphere microbial community structure of mesquite grown in acidic lead/zinc mine tailings.

    Science.gov (United States)

    Solís-Domínguez, Fernando A; Valentín-Vargas, Alexis; Chorover, Jon; Maier, Raina M

    2011-02-15

    Mine tailings in arid and semi-arid environments are barren of vegetation and subject to eolian dispersion and water erosion. Revegetation is a cost-effective strategy to reduce erosion processes and has wide public acceptance. A major cost of revegetation is the addition of amendments, such as compost, to allow plant establishment. In this paper we explore whether arbuscular mycorrhizal fungi (AMF) can help support plant growth in tailings at a reduced compost concentration. A greenhouse experiment was performed to determine the effects of three AMF inocula on biomass, shoot accumulation of heavy metals, and changes in the rhizosphere microbial community structure of the native plant Prosopis juliflora (mesquite). Plants were grown in an acidic lead/zinc mine tailings amended with 10% (w/w) compost amendment, which is slightly sub-optimal for plant growth in these tailings. After two months, AMF-inoculated plants showed increased dry biomass and root length (p<0.05) and effective AMF colonization compared to controls grown in uninoculated compost-amended tailings. Mesquite shoot tissue lead and zinc concentrations did not exceed domestic animal toxicity limits regardless of whether AMF inoculation was used. The rhizosphere microbial community structure was assessed using denaturing gradient gel electrophoresis (DGGE) profiles of the small subunit RNA gene for bacteria and fungi. Canonical correspondence analysis (CCA) of DGGE profiles showed that the rhizosphere fungal community structure at the end of the experiment was significantly different from the community structure in the tailings, compost, and AMF inocula prior to planting. Further, CCA showed that AMF inoculation significantly influenced the development of both the fungal and bacterial rhizosphere community structures after two months. The changes observed in the rhizosphere microbial community structure may be either a direct effect of the AMF inocula, caused by changes in plant physiology induced by

  4. Structure and optical band gaps of (Ba,Sr)SnO{sub 3} films grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Schumann, Timo; Raghavan, Santosh; Ahadi, Kaveh; Kim, Honggyu; Stemmer, Susanne, E-mail: stemmer@mrl.ucsb.edu [Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)

    2016-09-15

    Epitaxial growth of (Ba{sub x}Sr{sub 1−x})SnO{sub 3} films with 0 ≤ x ≤ 1 using molecular beam epitaxy is reported. It is shown that SrSnO{sub 3} films can be grown coherently strained on closely lattice and symmetry matched PrScO{sub 3} substrates. The evolution of the optical band gap as a function of composition is determined by spectroscopic ellipsometry. The direct band gap monotonously decreases with x from to 4.46 eV (x = 0) to 3.36 eV (x = 1). A large Burnstein-Moss shift is observed with La-doping of BaSnO{sub 3} films. The shift corresponds approximately to the increase in Fermi level and is consistent with the low conduction band mass.

  5. Effect of cesium assistance on the electrical and structural properties of indium tin oxide films grown by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Song, Jaewon; Hwang, Cheol Seong; Park, Sung Jin; Yoon, Neung Ku [Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-742 (Korea, Republic of); Sorona Inc., Pyeongtaek, Gyeonggi 451-841 (Korea, Republic of)

    2009-07-15

    Indium tin oxide (ITO) thin films were deposited by cesium (Cs)-assisted dc magnetron sputtering in an attempt to achieve a high performance at low temperatures. The films were deposited on SiO{sub 2}/Si wafer and glass (Eagle 2000) substrates at a substrate temperature of 100 degree sign C with a Cs vapor flow during the deposition process. The ITO thin films deposited in the presence of Cs vapor showed better crystallinity than the control films grown under normal Ar/O{sub 2} plasma conditions. The resistivity of the films with the Cs assistance was lower than that of the control films. The lowest resistivity of 6.2x10{sup -4} {Omega} cm, which is {approx}20% lower than that of the control sample, was obtained without any postdeposition thermal annealing. The surface roughness increased slightly when Cs vapor was added. The optical transmittance was >80% at wavelengths ranging from 380 to 700 nm.

  6. Effect of annealing on structural and optical properties of Cu{sub 2}ZnSnS{sub 4} thin films grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Surgina, G.D., E-mail: silvereye@bk.ru [National Research Nuclear University “Moscow Engineering Physics Institute”, Moscow 115409 (Russian Federation); Moscow Institute of Physics and Technology, Dolgoprudny, Moscow region 141700 (Russian Federation); Nevolin, V.N. [National Research Nuclear University “Moscow Engineering Physics Institute”, Moscow 115409 (Russian Federation); P.N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow 119991 (Russian Federation); Sipaylo, I.P.; Teterin, P.E. [National Research Nuclear University “Moscow Engineering Physics Institute”, Moscow 115409 (Russian Federation); Medvedeva, S.S. [Immanuel Kant Baltic Federal University, Kaliningrad 236041 (Russian Federation); Lebedinsky, Yu.Yu.; Zenkevich, A.V. [National Research Nuclear University “Moscow Engineering Physics Institute”, Moscow 115409 (Russian Federation); Moscow Institute of Physics and Technology, Dolgoprudny, Moscow region 141700 (Russian Federation)

    2015-11-02

    In this work, we compare the effect of different types of thermal annealing on the morphological, structural and optical properties of Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films grown by reactive Pulsed Laser Deposition in H{sub 2}S flow. Rutherford backscattering spectrometry, atomic force microscopy, X-ray diffraction, Raman spectroscopy and optical spectrophotometry data reveal dramatic increase of the band gap and the crystallite size without the formation of secondary phases upon annealing in N{sub 2} at the optimized conditions. - Highlights: • Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films were grown at room temperature. • Reactive Pulsed Laser Deposition in H{sub 2}S flow was used as a growth method. • Effect of annealing conditions on CZTS structural and optical properties is revealed. • Both the grain size and the band gap of CZTS film increase following the annealing. • Annealing in N{sub 2} effectively inhibits the formation of Sn{sub x}S secondary phases.

  7. Domain structure and magnetic properties of epitaxial SrRuO sub 3 films grown on SrTiO sub 3 (100) substrates by ion beam sputtering

    CERN Document Server

    Oh, S H

    2000-01-01

    The domain structure of epitaxial SrRuO sub 3 thin films grown on SrTiO sub 3 (100) substrates by using ion beam sputtering has been investigated with transmission electron microscopy (TEM) and X-ray diffraction (XRD). The SrRuO sub 3 films grown in the present study revealed a unique cube-on-cube epitaxial relationship, i.e., (100) sub S sub R sub O ll (100) sub S sub T sub O , [010] sub S sub R sub O ll [101] sub S sub T sub O , prevailing with a cubic single-domain structure. The cubic SrRuO sub 3 thin films that were inherently with free from RuO sub 6 octahedron tilting exhibited higher resistivity with suppressed magnetic properties. The Curie temperature of the thin films was suppressed by 60 K from 160 K for the bulk specimen, and the saturation magnetic moment was reduced by a significant amount. The tetragonal distortion of the SrRuO sub 3 thin films due to coherent growth with the substrate seemed to result in a strong magnetic anisotropy.

  8. Determination of the Mg occupation site in MOCVD- and MBE-grown Mg-doped InN using X-ray absorption fine-structure measurements

    Energy Technology Data Exchange (ETDEWEB)

    Miyajima, Takao; Uemura, Shigeaki; Kudo, Yoshihiro [Materials Laboratories, Sony Corporation, Atsugi, Kanagawa (Japan); Kitajima, Yoshinori [Photon Factory, High Energy Accelerator Research Organization, Tsukuba, Ibaraki (Japan); Yamamoto, Akio [Graduate School of Engineering, University of Fukui, Fukui (Japan); Muto, Daisuke; Nanishi, Yasushi [Department of Photonics, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577 (Japan)

    2008-07-01

    We analyzed the atomic structure around Mg atoms in MOCVD- and MBE-grown Mg-doped InN using Mg K-edge X-ray absorption fine-structure (XAFS) measurements. Our experimental data closely fit to the simulated data in which Mg atoms occupy the substitutional sites of In atoms. From this result, we conclude that Mg atoms essentially occupy not N atoms sites but In atoms sites, meaning that Mg atoms can act as acceptors in InN. We believe that observations of p-type conductivity are prevented by problems such as carrier compensation and electron accumulation at the surface. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. X-ray investigation of the interface structure of free standing InAs nanowires grown on GaAs[ anti 1 anti 1 anti 1]{sub B}

    Energy Technology Data Exchange (ETDEWEB)

    Bauer, Jens; Gottschalch, Volker; Wagner, Gerald [Universitaet Leipzig, Halbleiterchemie, Leipzig (Germany); Pietsch, Ullrich; Davydok, Anton; Biermanns, Andreas [Universitaet Siegen, Festkoerperphysik, Siegen (Germany); Grenzer, Joerg [Forschungszentrum Rossendorf, Institut fuer Ionenstrahlphysik und Materialforschung, Dresden (Germany)

    2009-09-15

    The heteroepitaxial growth process of InAs nanowires (NW) on GaAs[ anti 1 anti 1 anti 1]{sub B} substrate was investigated by X-ray grazing-incidence diffraction using synchrotron radiation. For crystal growth we applied the vapor-liquid-solid (VLS) growth mechanism via gold seeds. The general sample structure was extracted from various electron microscopic and X-ray diffraction experiments. We found a closed Ga{sub x}In{sub 1-x} As graduated alloy layer at the substrate to NW interface which was formed in the initial stage of VLS growth with a Au-Ga-In liquid alloy. With ongoing growth time a transition from this VLS layer growth to the conventional VLS NW growth was observed. The structural properties of both VLS grown crystal types were examined. Furthermore, we discuss the VLS layer growth process. (orig.)

  10. Study of the optical properties and structure of ZnSe/ZnO thin films grown by MOCVD with varying thicknesses

    Energy Technology Data Exchange (ETDEWEB)

    Jabri, S., E-mail: slaheddine.jabri@fst.rnu.tn [Unité des nanomatériaux et photoniques, Faculté des Sciences de Tunis, Campus Universitaire Ferhat Hachad, El Manar, 2092 Tunis (Tunisia); Amiri, G.; Sallet, V. [Groupe d’Etude de la Matière Condensée, CNRS-Université de Versailles St Quentin, Université Paris-Saclay, 45 avenue des Etats Unis, 78035 Versailles Cedex (France); Souissi, A. [Laboratoire de Photovoltaïque, Centre de Recherches et des Technologies de l’Energie, Technopole Borj Cedria, B.P. 95, Hammammlif 2050 (Tunisia); Meftah, A. [Unité des nanomatériaux et photoniques, Faculté des Sciences de Tunis, Campus Universitaire Ferhat Hachad, El Manar, 2092 Tunis (Tunisia); Galtier, P. [Groupe d’Etude de la Matière Condensée, CNRS-Université de Versailles St Quentin, Université Paris-Saclay, 45 avenue des Etats Unis, 78035 Versailles Cedex (France); Oueslati, M. [Unité des nanomatériaux et photoniques, Faculté des Sciences de Tunis, Campus Universitaire Ferhat Hachad, El Manar, 2092 Tunis (Tunisia)

    2016-05-15

    ZnSe layers were grown on ZnO substrates by the metal organic chemical vapor deposition technique. A new structure appeared at lower thicknesses films. The structural properties of the thin films were studied by the X-ray diffraction (XRD) and Raman spectroscopy methods. First, Raman selection rules are explicitly put forward from a theoretical viewpoint. Second, experimentally-retrieved-intensities of the Raman signal as a function of polarization angle of incident light are fitted to the obtained theoretical dependencies in order to confirm the crystallographic planes of zinc blend ZnSe thin film, and correlate with DRX measurements. Raman spectroscopy has been used to characterize the interfacial disorder that affects energy transport phenomena at ZnSe/ZnO interfaces and the Photoluminescence (PL) near the band edge of ZnSe thin films.

  11. Effects of GaN capping on the structural and the optical properties of InN nanostructures grown by using MOCVD

    International Nuclear Information System (INIS)

    Sun, Yuanping; Cho, Yonghoon; Wang, Hui; Wang, Lili; Zhang, Shuming; Yang, Hui

    2010-01-01

    InN nanostructures with and without GaN capping layers were grown by using metal-organic chemical vapor deposition. Morphological, structural, and optical properties were systematically studied by using atomic force microscopy, X-ray diffraction (XRD) and temperature-dependent photoluminescence (PL). XRD results show that an InGaN structure is formed for the sample with a GaN capping layer, which will reduce the quality and the IR PL emission of the InN. The lower emission peak at ∼0.7 eV was theoretically fitted and assigned as the band edge emission of InN. Temperature-dependent PL shows a good quantum efficiency for the sample without a GaN capping layers; this corresponds to a lower density of dislocations and a small activation energy.

  12. Structure dependent luminescence characterization of green-yellow emitting Sr{sub 2}SiO{sub 4}:Eu{sup 2+} phosphors for near UV LEDs

    Energy Technology Data Exchange (ETDEWEB)

    Han, J.K. [University of California, San Diego, Materials Science and Engineering Program, La Jolla, CA 92093 (United States); Hannah, M.E.; Piquette, A. [Central Research, OSRAM SYLVANIA, 71 Cherry Hill Drive Beverly, MA 01915 (United States); Hirata, G.A. [Centro de Nanociencias y Nanotecnolgia, Universidad Nacional Autonoma de Mexico, Km. 107 Carretera Tijuana-Ensenada Apdo, Ensenada, MX CP 22860 (Mexico); Talbot, J.B. [University of California, San Diego, Materials Science and Engineering Program, La Jolla, CA 92093 (United States); Mishra, K.C. [Central Research, OSRAM SYLVANIA, 71 Cherry Hill Drive Beverly, MA 01915 (United States); McKittrick, J., E-mail: jmckittrick@ucsd.edu [University of California, San Diego, Materials Science and Engineering Program, La Jolla, CA 92093 (United States)

    2012-01-15

    This paper reports on the luminescence properties of mixtures of {alpha}- and {beta}-(Sr{sub 0.97}Eu{sub 0.03}){sub 2}SiO{sub 4} phosphors. These phosphors were prepared by 3 different synthesis techniques: a modified sol-gel/Pechini method, a co-precipitation method and a combustion method. The structural and optical properties of these phosphors were compared to those of solid state synthesized powders. The emission spectra consist of a weak broad blue band centered near 460 nm and a strong broad green-yellow band centered between 543 and 573 nm depending on the crystal structure. The green-yellow emission peak blue-shifts as the amount of {beta} phase increases and the photoluminescence emission intensity and quantum efficiency of the mixed phase powders is greater than those of predominant {alpha}-phase powders when excited between 370 and 410 nm. Thus, (Sr{sub 1-x}Eu{sub x}){sub 2}SiO{sub 4} with larger proportion of the {beta} phase are more promising candidates than single {alpha}-phase powders for use as a green-yellow emitting phosphor for near UV LED applications. Finally the phosphors prepared by the sol-gel/Pechini method, which have larger amount of {beta} phase, have a higher emission intensity and quantum efficiency than those prepared by co-precipitation or combustion synthesis. - Highlights: > Mixtures of {alpha}- and {beta}-Sr{sub 2}SiO{sub 4}:Eu{sup 2+} phosphors were prepared by 3 different synthesis methods. > Emission peak blue-shifts as the amount of {beta} phase increases. > Emission intensity and QE of the {alpha}+{beta} powders are greater than those of single {alpha} phase. > Phosphors prepared by sol-gel/Pechini have the highest emission intensity and QE.

  13. Broadband Radiometric LED Measurements

    OpenAIRE

    Eppeldauer, G. P.; Cooksey, C. C.; Yoon, H. W.; Hanssen, L. M.; Podobedov, V. B.; Vest, R. E.; Arp, U.; Miller, C. C.

    2016-01-01

    At present, broadband radiometric measurements of LEDs with uniform and low-uncertainty results are not available. Currently, either complicated and expensive spectral radiometric measurements or broadband photometric LED measurements are used. The broadband photometric measurements are based on the CIE standardized V(��) function, which cannot be used in the UV range and leads to large errors when blue or red LEDs are measured in its wings, where the realization is always poor. Reference irr...

  14. Broadband radiometric LED measurements

    Science.gov (United States)

    Eppeldauer, G. P.; Cooksey, C. C.; Yoon, H. W.; Hanssen, L. M.; Podobedov, V. B.; Vest, R. E.; Arp, U.; Miller, C. C.

    2016-09-01

    At present, broadband radiometric LED measurements with uniform and low-uncertainty results are not available. Currently, either complicated and expensive spectral radiometric measurements or broadband photometric LED measurements are used. The broadband photometric measurements are based on the CIE standardized V(λ) function, which cannot be used in the UV range and leads to large errors when blue or red LEDs are measured in its wings, where the realization is always poor. Reference irradiance meters with spectrally constant response and high-intensity LED irradiance sources were developed here to implement the previously suggested broadband radiometric LED measurement procedure [1, 2]. Using a detector with spectrally constant response, the broadband radiometric quantities of any LEDs or LED groups can be simply measured with low uncertainty without using any source standard. The spectral flatness of filtered-Si detectors and low-noise pyroelectric radiometers are compared. Examples are given for integrated irradiance measurement of UV and blue LED sources using the here introduced reference (standard) pyroelectric irradiance meters. For validation, the broadband measured integrated irradiance of several LED-365 sources were compared with the spectrally determined integrated irradiance derived from an FEL spectral irradiance lamp-standard. Integrated responsivity transfer from the reference irradiance meter to transfer standard and field UV irradiance meters is discussed.

  15. Optimization of structural and growth parameters of metamorphic InGaAs photovoltaic converters grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Rybalchenko, D. V.; Mintairov, S. A.; Salii, R. A.; Shvarts, M. Z.; Timoshina, N. Kh.; Kalyuzhnyy, N. A., E-mail: nickk@mail.ioffe.ru [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

    2017-01-15

    Metamorphic Ga{sub 0.76}In{sub 0.24}As heterostructures for photovoltaic converters are grown by the MOCVD (metal–organic chemical vapor deposition) technique. It is found that, due to the valence-band offset at the p-In{sub 0.24}Al{sub 0.76}As/p-In{sub 0.24}Ga{sub 0.76}As (wide-gap window/emitter) heterointerface, a potential barrier for holes arises as a result of a low carrier concentration in the wide-gap material. The use of an InAlGaAs solid solution with an Al content lower than 40% makes it possible to raise the hole concentration in the widegap window up ~9 × 10{sup 18} cm{sup –3} and completely remove the potential barrier, thereby reducing the series resistance of the device. The parameters of an GaInAs metamorphic buffer layer with a stepwise In content profile are calculated and its epitaxial growth conditions are optimized, which improves carrier collection from the n-GaInAs base region and provides a quantum efficiency of 83% at a wavelength of 1064 nm. Optimization of the metamorphic heterostructure of the photovoltaic converter results in that its conversion efficiency for laser light with a wavelength of 1064 nm is 38.5%.

  16. Infrared study of the absorption edge of β-InN films grown on GaN/MgO structures

    Science.gov (United States)

    Pérez-Caro, M.; Rodríguez, A. G.; Vidal, M. A.; Navarro-Contreras, H.

    2010-07-01

    Infrared optical studies were carried out in a group of cubic InN samples grown by gas source molecular beam epitaxy on MgO (001) substrates. Room temperature (RT) reflectance and low-temperature (LT) transmittance measurements were performed by using fast Fourier transform infrared spectrometry. Reflectance fittings allowed to establish that β-InN films have large free-carrier concentrations present (>1019 cm-3), a result that is corroborated by Hall effect measurements. Each sample explored exhibited a different optical absorption edge. The Varshni parameters that describe adequately the optical absorption edge responses with temperature are obtained for the set of samples studied. The observed temperatures changes, from LT to RT, are the lowest reported for III-V semiconductor binary compounds. The temperature coefficient of the conduction band depends on the strength of the electron-phonon interaction (e-ph-i), as well as on the thermal expansion. It has been predicted that cubic InN has one of the smallest e-ph-i of all III-V compounds, which is corroborated by these results. The variation in values of absorption edges is clearly consistent with the Burstein-Moss and band renormalization effects, produced by high free electron concentrations. It is shown that the conduction band in β-InN, analogous to wurtzite InN, follows a nonparabolic behavior.

  17. Photoluminescence quenching, structures, and photovoltaic properties of ZnO nanostructures decorated plasma grown single walled carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Aïssa, Brahim, E-mail: brahim.aissa@mpbc.ca [University of Quebec, Centre Énergie, Matériaux et Télécommunications, INRS-EMT (Canada); Nedil, Mourad [Telebec Wireless Underground Communication Laboratory, UQAT (Canada); Belaidi, Abdelhak; Isaifan, Rima J. [Hamad Bin Khalifa University, Qatar Foundation, Qatar Environment and Energy Research Institute (Qatar); Bentouaf, Ali [University Hassiba Ben Bouali, Physics Department, Faculty of Science (Algeria); Fauteux, Christian; Therriault, Daniel [École Polytechnique de Montréal, Laboratory for Multiscale Mechanics (LM2), Mechanical Engineering Department (Canada)

    2017-05-15

    Zinc oxide (ZnO) nanostructures were successfully grown directly on single walled carbon nanotubes (SWCNT) template through the CO{sub 2} laser-induced chemical liquid deposition (LCLD) process. Photoluminescence (PL) of the deposited ZnO/SWCNT hybrid composites exhibits, at room temperature, a narrow near UV band located at 390 nm with no emission bands in the visible region, indicating a high degree of crystalline quality of the ZnO nanostructures. Moreover, when the relative SWCNT loads are varied within the composites, the PL intensity and the diffused optical reflectance diminish in comparison with those of ZnO alone, owing to the transfer of photo-excited electrons from ZnO to the SWCNT, and the enhancement of the optical absorbance, respectively. Finally, these ZnO/SWCNT hybrid composites are integrated into a heterojunction photovoltaic-based device, using PEDOT:PSS on ITO/glass substrate. The devices show an evident p–n junction behavior in the dark, and a clear I–V curve shift downward when illuminated with an open-circuit voltage of 1.1 V, a short circuit current density of 14.05 μA cm{sup −2}, and a fill factor of ∼35%. These results indicate that these composites fabricated via LCLD process could be promising for optoelectronic and energy-harvesting devices.

  18. Infrared study of the absorption edge of β-InN films grown on GaN/MgO structures

    International Nuclear Information System (INIS)

    Perez-Caro, M.; Rodriguez, A. G.; Vidal, M. A.; Navarro-Contreras, H.

    2010-01-01

    Infrared optical studies were carried out in a group of cubic InN samples grown by gas source molecular beam epitaxy on MgO (001) substrates. Room temperature (RT) reflectance and low-temperature (LT) transmittance measurements were performed by using fast Fourier transform infrared spectrometry. Reflectance fittings allowed to establish that β-InN films have large free-carrier concentrations present (>10 19 cm -3 ), a result that is corroborated by Hall effect measurements. Each sample explored exhibited a different optical absorption edge. The Varshni parameters that describe adequately the optical absorption edge responses with temperature are obtained for the set of samples studied. The observed temperatures changes, from LT to RT, are the lowest reported for III-V semiconductor binary compounds. The temperature coefficient of the conduction band depends on the strength of the electron-phonon interaction (e-ph-i), as well as on the thermal expansion. It has been predicted that cubic InN has one of the smallest e-ph-i of all III-V compounds, which is corroborated by these results. The variation in values of absorption edges is clearly consistent with the Burstein-Moss and band renormalization effects, produced by high free electron concentrations. It is shown that the conduction band in β-InN, analogous to wurtzite InN, follows a nonparabolic behavior.

  19. Zno Micro/Nanostructures Grown on Sapphire Substrates Using Low-Temperature Vapor-Trapped Thermal Chemical Vapor Deposition: Structural and Optical Properties

    Directory of Open Access Journals (Sweden)

    Po-Sheng Hu

    2017-12-01

    Full Text Available In this research, the Zn(C5H7O22·xH2O-based growth of ZnO micro/nanostructures in a low temperature, vapor-trapped chemical vapor deposition system was attempted to optimize structural and optical properties for potential biomedical applications. By trapping in-flow gas molecules and Zinc vapor inside a chamber tube by partially obstructing a chamber outlet, a high pressure condition can be achieved, and this experimental setup has the advantages of ease of synthesis, being a low temperature process, and cost effectiveness. Empirically, the growth process proceeded under a chamber condition of an atmospheric pressure of 730 torr, a controlled volume flow rate of input gas, N2/O2, of 500/500 Standard Cubic Centimeters per Minute (SCCM, and a designated oven temperature of 500 °C. Specifically, the dependence of structural and optical properties of the structures on growth duration and spatially dependent temperature were investigated utilizing scanning electron microscopy, X-ray diffraction (XRD, photoluminescence (PL, and ultraviolet-visible transmission spectroscopy. The experimental results indicate that the grown thin film observed with hexagonal structures and higher structural uniformity enables more prominent structural and optical signatures. XRD spectra present the dominant peaks along crystal planes of (002 and (101 as the main direction of crystallization. In addition, while the structures excited with laser wavelength of 325 nm emit a signature radiation around 380 nm, an ultraviolet lamp with a wavelength of 254 nm revealed distinctive photoluminescence peaks at 363.96 nm and 403.52 nm, elucidating different degrees of structural correlation as functions of growth duration and the spatial gradient of temperature. Transmittance spectra of the structures illustrate typical variation in the wavelength range of 200 nm to 400 nm, and its structural correlation is less significant when compared with PL.

  20. Temperature Dependences of the Product of the Differential Resistance by the Area in MIS-Structures Based on Cd x Hg1- x Te Grown by Molecularbeam Epitaxy on Alternative Si and GaAs Substrates

    Science.gov (United States)

    Voitsekhovskii, A. V.; Nesmelov, S. N.; Dzyadukh, S. M.; Varavin, V. S.; Vasil'ev, V. V.; Dvoretskii, S. A.; Mikhailov, N. N.; Yakushev, M. V.; Sidorov, G. Yu.

    2017-06-01

    In a temperature range of 9-200 K, temperature dependences of the differential resistance of space-charge region in the strong inversion mode are experimentally studied for MIS structures based on CdxHg1-xTe (x = 0.22-0.40) grown by molecular-beam epitaxy. The effect of various parameters of structures: the working layer composition, the type of a substrate, the type of insulator coating, and the presence of a near-surface graded-gap layer on the value of the product of differential resistance by the area is studied. It is shown that the values of the product RSCRA for MIS structures based on n-CdHgTe grown on a Si(013) substrate are smaller than those for structures based on the material grown on a GaAs(013) substrate. The values of the product RSCRA for MIS structures based on p-CdHgTe grown on a Si(013) substrate are comparable with the value of the analogous parameter for MIS structures based on p-CdHgTe grown on a GaAs(013) substrate.

  1. Structural Properties of Zinc Oxide Nanorods Grown on Al-Doped Zinc Oxide Seed Layer and Their Applications in Dye-Sensitized Solar Cells

    Directory of Open Access Journals (Sweden)

    Kyung Ho Kim

    2014-03-01

    Full Text Available We fabricated zinc oxide (ZnO nanorods (NRs with Al-doped ZnO (AZO seed layers and dye-sensitized solar cells (DSSCs employed the ZnO NRs between a TiO2 photoelectrode and a fluorine-doped SnO2 (FTO electrode. The growth rate of the NRs was strongly dependent on the seed layer conditions, i.e., thickness, Al dopant and annealing temperature. Attaining a large particle size with a high crystallinity of the seed layer was vital to the well-aligned growth of the NRs. However, the growth was less related to the substrate material (glass and FTO coated glass. With optimized ZnO NRs, the DSSCs exhibited remarkably enhanced photovoltaic performance, because of the increase of dye absorption and fast carrier transfer, which, in turn, led to improved efficiency. The cell with the ZnO NRs grown on an AZO seed layer annealed at 350 °C showed a short-circuit current density (JSC of 12.56 mA/cm2, an open-circuit voltage (VOC of 0.70 V, a fill factor (FF of 0.59 and a power conversion efficiency (PCE, η of 5.20% under air mass 1.5 global (AM 1.5G illumination of 100 mW/cm2.

  2. Structure and polymer form of poly-3-hydroxyalkanoates produced by Pseudomonas oleovorans grown with mixture of sodium octanoate/undecylenic acid and sodium octanoate/5-phenylvaleric acid.

    Science.gov (United States)

    Ho, I-Ching; Yang, Sheng-Pin; Chiu, Wen-Yen; Huang, Shih-Yow

    2007-01-30

    PHAs (poly-3-hydroxyalkanoates) obtained by Pseudomonas oleovorans grown with mixed carbon sources were investigated. Mixed carbon sources were sodium octanoate/undecylenic acid and sodium octanoate/5-phenylvaleric acid. Effect of carbon source in pre-culture on PHAs structure was investigated. Main fermentation was conducted with mixture of sodium octanoate/undecylenic acid, and PHA contained both saturated and unsaturated units. When more undecylenic acid was used in the medium, the ratio of unsaturated unit increased and the T(g) of the products also changed. The PHA grown with mixture of sodium octanoate and undecylenic acid was a random copolymer, which was determined by DSC analysis. Using mixed carbon sources of sodium octanoate and 5-phenylvaleric acid, highest dry cell weight and PHA concentration were obtained when 0.02g or 0.04g of 5-phenylvaleric acid were added in 50mL medium. Cultured with sodium octanoate and 5-phenylvaleric acid, PHA containing HO (3-hydroxyoctanoate) unit and HPV (3-hydroxy-5-phenylvalerate) unit was produced. T(g) of the products fell between those of pure PHO and pure PHPV. By means of DSC analysis and fractionation method, the PHA obtained was regarded as a random copolymer.

  3. Effects of ZnO Seed Layers Prepared with Various Precursor Concentrations on Structural and Defect Emission Properties of ZnO Nanorods Grown by Hydrothermal Method

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Soaram; Nam, Giwoong; Leem, Jae-Young; Kim, Yangsoo [Inje University, Gimhae (Korea, Republic of); Kim, Ghun Sik; Yoon, Sung Pil [Korea Institute of Science and Technology, Seoul (Korea, Republic of)

    2013-07-15

    ZnO nanorods were grown by a hydrothermal method on ZnO seed layers that had previously been prepared from solutions containing various precursor concentrations. The effects of the ZnO seed layers prepared with various precursor concentrations on the structural and defect emissions of the ZnO nanorods were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), and photoluminescence (PL) spectroscopy. The surface morphology of the ZnO seed layers changed with an increasing precursor concentration, and the diameters and densities of the ZnO nanorods depended on the morphologies of the ZnO seed layers. The ZnO seed layers prepared with various precursor concentrations affected the residual stress in the nanorods grown on the seed layers, the intensity and full widths at half maximum of the 2-theta angle in the XRD spectra for the nanorods, and the intensity and position of the defect emission peak in deep-level emission (DLE) PL spectra for the ZnO nanorods.

  4. Dansk LED - Museumsbelysning

    DEFF Research Database (Denmark)

    Poulsen, Peter Behrensdorff; Dam-Hansen, Carsten; Thorseth, Anders

    Projektet har til formål at anvende dansk forskning inden for optik og lys til at realisere innovative energieffektive LED lyssystemer til museumsbranchen.......Projektet har til formål at anvende dansk forskning inden for optik og lys til at realisere innovative energieffektive LED lyssystemer til museumsbranchen....

  5. Structural and optical characterization of self-assembled Ge nanocrystal layers grown by plasma-enhanced chemical vapor deposition

    NARCIS (Netherlands)

    Saeed, S.; Buters, F.; Dohnalova, K.; Wosinski, L.; Gregorkiewicz, T.

    2014-01-01

    We present a structural and optical study of solid-state dispersions of Ge nanocrystals prepared by plasma-enhanced chemical vapor deposition. Structural analysis shows the presence of nanocrystalline germanium inclusions embedded in an amorphous matrix of Si-rich SiO2. Optical characterization

  6. Study of the Morphological, Structural, Optical and Photoelectrochemical Properties of Zinc Oxide Nanorods Grown Using a Microwave Chemical Bath Deposition Method

    Energy Technology Data Exchange (ETDEWEB)

    Oh, Sungjin; Ryu, Hyukhyun [Inje University, Gimhae (Korea, Republic of); Lee, Won-Jae [Dong-Eui University, Busan (Korea, Republic of)

    2017-04-15

    In this study, zinc oxide (ZnO) nanostructures were grown on a ZnO-buffered fluorine-doped tin oxide (FTO) substrate using a microwave chemical bath deposition method with different zinc oxide precursor concentrations from 0.01 to 0.5 M. We investigated the effects of the zinc oxide precursor concentration on the morphological, structural, optical and photoelectrochemical properties of the ZnO nanostructures. From this work, we found that ZnO one-dimensional structures mainly grew along the (002) plane, and the nanorod length, diameter, surface area and photoelectrochemical properties were largely dependent on the precursor concentration. That is, the photoelectrochemical properties were affected by the morphological and structural properties of the ZnO. The morphological, structural, optical and photoelectrochemical properties of the ZnO nanostructure were investigated by field emission scanning electron microscopy (FE-SEM) and atomic force microscope (AFM), X-ray diffraction (XRD), UV-visible spectroscopy and 3-electrode potentiostat. We obtained the highest photocurrent density of 0.37 mA/cm{sup 2} (at 1.1 V vs. SCE) from the precursor concentration of 0.07 M, which resulted in ZnO nanostructures with proper length and diameter, large surface area and good structural properties.

  7. Semiconductor lasers and herterojunction leds

    CERN Document Server

    Kressel, Henry

    2012-01-01

    Semiconductor Lasers and Heterojunction LEDs presents an introduction to the subject of semiconductor lasers and heterojunction LEDs. The book reviews relevant basic solid-state and electromagnetic principles; the relevant concepts in solid state physics; and the p-n junctions and heterojunctions. The text also describes stimulated emission and gain; the relevant concepts in electromagnetic field theory; and the modes in laser structures. The relation between electrical and optical properties of laser diodes; epitaxial technology; binary III-V compounds; and diode fabrication are also consider

  8. Structural and magentic characterization of rare earth and transition metal films grown on epitaxial buffer films on semiconductor substrates

    International Nuclear Information System (INIS)

    Farrow, R.F.C.; Parkin, S.S.P.; Speriosu, V.S.; Bezinge, A.; Segmuller, A.P.

    1989-01-01

    Structural and magnetic data are presented and discussed for epitaxial films of rare earth metals (Dy, Ho, Er) on LaF 3 films on the GaAs(TTT) surface and Fe on Ag films on the GaAs(001) surface. Both systems exhibit unusual structural characteristics which influence the magnetic properties of the metal films. In the case of rare earth epitaxy on LaF 3 the authors present evidence for epitaxy across an incommensurate or discommensurate interface. Coherency strain is not transmitted into the metal which behaves much like bulk crystals of the rare earths. In the case of Fe films, tilted epitaxy and long-range coherency strain are confirmed by X- ray diffractometry. Methods of controlling some of these structural effects by modifying the epitaxial structures are presented

  9. Design and Fabrication of Multi Quantum well based GaN/InGaN Blue LED

    Science.gov (United States)

    Meel, K.; Mahala, P.; Singh, S.

    2018-03-01

    This paper presents the optimization of the multi-quantum well based Light Emitting Diode (LED) structure. We investigate the electrical and optical properties of the device on several factors like well width, barrier width, the number of quantum wells and then optimize the structure. The device is optimized for a well width and barrier width of 3nm and 6nm respectively, consisting of five quantum wells. Simulations were carried out using Silvaco ATLAS TCAD simulation program (Silvaco International, USA). The optimized structure was grown by MOCVD and fabricated. The I-V characteristic was also measured.

  10. X-ray Topographic Investigations of Domain Structure in Czochralski Grown PrxLa1-xAlO3 Crystals

    International Nuclear Information System (INIS)

    Wieteska, K.; Wierzchowski, W.; Malinowska, A.; Turczynski, S.; Pawlak, D.A.; Lukasiewicz, T.; Lefeld-Sosnowska, M.; Graeff, W.

    2010-01-01

    In the present paper X-ray diffraction topographic techniques were applied to a number of samples cut from Czochralski grown Pr x La 1-x AlO 3 crystals with different ratio of praseodymium and lanthanum. Conventional and synchrotron X-ray topographic investigations revealed differently developed domain structures dependent on the composition of mixed praseodymium lanthanum aluminium perovskites. Some large mosaic blocks were observed together with the domains. In the best crystals, X-ray topographs revealed striation fringes and individual dislocations inside large domains. Synchrotron topographs allowed us to indicate that the domains correspond to three different crystallographic planes, and to evaluate the lattice misorientation between domains in the range of 20-50 arc min (authors)

  11. CuO nanostructures grown by the SILAR method: Influence of Pb-doping on the morphological, structural and optical properties

    Energy Technology Data Exchange (ETDEWEB)

    Bayansal, F., E-mail: fbayansal@gmail.com [Department of Metallurgical and Materials Engineering, Faculty of Technology, Mustafa Kemal University, Hatay (Turkey); Department of Physics, Faculty of Arts and Sciences, Mustafa Kemal University, Hatay (Turkey); Gülen, Y. [Department of Physics, Faculty of Arts and Sciences, Marmara University, İstanbul (Turkey); Şahin, B. [Department of Physics, Faculty of Arts and Sciences, Mustafa Kemal University, Hatay (Turkey); Kahraman, S. [Department of Metallurgical and Materials Engineering, Faculty of Technology, Mustafa Kemal University, Hatay (Turkey); Department of Physics, Faculty of Arts and Sciences, Mustafa Kemal University, Hatay (Turkey); Çetinkara, H.A. [Department of Physics, Faculty of Arts and Sciences, Mustafa Kemal University, Hatay (Turkey)

    2015-01-15

    Highlights: • CuO nanostructures with Pb-doping by the SILAR method is reported for the first time. • CuO nanostructures of different morphologies were grown by different Pb ratios. • E{sub g} values of the films can be altered by changing Pb doping concentrations. - Abstract: CuO nanostructures with and without Pb were synthesized by the Successive Ionic Layer Adsorption and Reaction method. The films were characterized by scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction and ultraviolet–visible spectrophotometry. Scanning electron microscopy results showed that the morphology of the film surface was changed from plate-like to coral-like nanostructures with increasing Pb concentration. The X-ray diffraction patterns showed the monoclinic crystal structure with preferential planes of (1{sup ¯}11) and (1 1 1). Furthermore, ultraviolet–visible spectra showed that the band gap of the films was tailored by Pb doping.

  12. Structural and electrical properties of InAs/GaSb superlattices grown by metalorganic vapor phase epitaxy for midwavelength infrared detectors

    Energy Technology Data Exchange (ETDEWEB)

    Arikata, Suguru; Kyono, Takashi [Semiconductor Technologies Laboratory, Sumitomo Electric Industries, LTD., Hyogo (Japan); Miura, Kouhei; Balasekaran, Sundararajan; Inada, Hiroshi; Iguchi, Yasuhiro [Transmission Devices Laboratory, Sumitomo Electric Industries, LTD., Yokohama (Japan); Sakai, Michito [Sensor System Research Group, Japan Aerospace Exploration Agency (JAXA), Tsukuba, Ibaraki (Japan); Katayama, Haruyoshi [Space Technology Directorate I, Japan Aerospace Exploration Agency (JAXA), Tsukuba, Ibaraki (Japan); Kimata, Masafumi [College of Science and Engineering, Ritsumeikan University, Shiga (Japan); Akita, Katsushi [Sumiden Semiconductor Materials, LTD., Hyogo (Japan)

    2017-03-15

    InAs/GaSb superlattice (SL) structures were fabricated on GaSb substrates by metalorganic vapor phase epitaxy (MOVPE) toward midwavelength infrared (MWIR) photodiodes. Almost defect-free 200-period SLs with a strain-compensation interfacial layer were successfully fabricated and demonstrate an intense photoluminescence peak centered at 6.1 μm at 4 K and an external quantum efficiency of 31% at 3.5 μm at 20 K. These results indicate that the high-performance MWIR detectors can be fabricated in application with the InAs/GaSb SLs grown by MOVPE as an attractive method for production. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  13. CuO nanostructures grown by the SILAR method: Influence of Pb-doping on the morphological, structural and optical properties

    International Nuclear Information System (INIS)

    Bayansal, F.; Gülen, Y.; Şahin, B.; Kahraman, S.; Çetinkara, H.A.

    2015-01-01

    Highlights: • CuO nanostructures with Pb-doping by the SILAR method is reported for the first time. • CuO nanostructures of different morphologies were grown by different Pb ratios. • E g values of the films can be altered by changing Pb doping concentrations. - Abstract: CuO nanostructures with and without Pb were synthesized by the Successive Ionic Layer Adsorption and Reaction method. The films were characterized by scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction and ultraviolet–visible spectrophotometry. Scanning electron microscopy results showed that the morphology of the film surface was changed from plate-like to coral-like nanostructures with increasing Pb concentration. The X-ray diffraction patterns showed the monoclinic crystal structure with preferential planes of (1 ¯ 11) and (1 1 1). Furthermore, ultraviolet–visible spectra showed that the band gap of the films was tailored by Pb doping

  14. Structural, optical, and hydrogenation properties of ZnO nanowall networks grown on a Si (1 1 1) substrate by plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Su, S.C.; Lu, Y.M.; Zhang, Z.Z.; Li, B.H.; Shen, D.Z.; Yao, B.; Zhang, J.Y.; Zhao, D.X.; Fan, X.W.

    2008-01-01

    ZnO nanowall networks were grown on a Si (1 1 1) substrate by plasma-assisted molecular beam epitaxy (P-MBE) without using catalysts. Scanning electronic microscopy (FE-SEM) confirmed the formation of nanowalls with a thickness of about 10-20 nm. X-ray diffraction (XRD) showed that the ZnO nanowall networks were crystallized in a wurtzite structure with their height parallel to the direction. Photoluminescence (PL) of the ZnO nanowall networks exhibited free excitons (FEs), donor-bound exciton (D 0 X), donor-acceptor pair (DAP), and free exciton to acceptor (FA) emissions. The growth mechanism of the ZnO nanowall networks was discussed, and their hydrogenation was also studied

  15. Investigation of InN layers grown by MOCVD using analytical and high resolution TEM: The structure, band gap, role of the buffer layers

    International Nuclear Information System (INIS)

    Ruterana, P.; Abouzaid, M.; Gloux, F.; Maciej, W.; Doualan, J.L.; Drago, M.; Schmidtling, T.; Pohl, U.W.; Richter, W.

    2006-01-01

    In this work we investigate the microstructure of InN layers grown by MOCVD on different buffer layers using TEM (InN, GaN). The large mismatch between the various lattices (InN, sapphire or GaN) leads to particular interface structures. Our local analysis allows to show that at atomic scale, the material has the InN lattice parameters and that no metallic In precipitates are present, meaning that the PL emission below 0.8 eV is a genuine property of the InN semiconductor. It is also shown that the N polar layers, which exhibit a 2D growth, have poorer PL emission than In polar layers. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Structural characterization of GaAs self-assembled quantum dots grown by Droplet Epitaxy on Ge virtual substrates on Si

    International Nuclear Information System (INIS)

    Frigeri, C.; Bietti, S.; Isella, G.; Sanguinetti, S.

    2013-01-01

    The structure of self-assembled quantum dots (QDs) grown by Droplet Epitaxy on Ge virtual substrates has been investigated by TEM. The QDs have a pyramidal shape with base and height of 50 nm. By (0 0 2) dark field TEM it was seen that the pyramid top is Ga poor and Al rich most likely because of the higher mobility of Ga along the pyramid sides down to the base. The investigated QDs contain defects identified as As precipitates by Moirè fringes. The smallest ones (3–5 nm) are coherent with the GaAs lattice suggesting that they could be a cubic phase of As precipitation. It seems to be a metastable phase since the hexagonal phase is recovered as the precipitate size increases above ∼5 nm.

  17. Influence of arsenic flow on the crystal structure of epitaxial GaAs grown at low temperatures on GaAs (100) and (111)A substrates

    Energy Technology Data Exchange (ETDEWEB)

    Galiev, G. B.; Klimov, E. A. [Russian Academy of Sciences, Institute of Ultra High Frequency Semiconductor Electronics (Russian Federation); Vasiliev, A. L.; Imamov, R. M. [Russian Academy of Sciences, Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,” (Russian Federation); Pushkarev, S. S., E-mail: s-s-e-r-p@mail.ru [Russian Academy of Sciences, Institute of Ultra High Frequency Semiconductor Electronics (Russian Federation); Trunkin, I. N. [National Research Centre “Kurchatov Institute” (Russian Federation); Maltsev, P. P. [Russian Academy of Sciences, Institute of Ultra High Frequency Semiconductor Electronics (Russian Federation)

    2017-01-15

    The influence of arsenic flow in a growth chamber on the crystal structure of GaAs grown by molecular-beam epitaxy at a temperature of 240°C on GaAs (100) and (111)A substrates has been investigated. The flow ratio γ of arsenic As4 and gallium was varied in the range from 16 to 50. GaAs films were either undoped, or homogeneously doped with silicon, or contained three equidistantly spaced silicon δ-layers. The structural quality of the annealed samples has been investigated by transmission electron microscopy. It is established for the first time that silicon δ-layers in “low-temperature” GaAs serve as formation centers of arsenic precipitates. Their average size, concentration, and spatial distribution are estimated. The dependence of the film structural quality on γ is analyzed. Regions 100–150 nm in size have been revealed in some samples and identified (by X-ray microanalysis) as pores. It is found that, in the entire range of γ under consideration, GaAs films on (111)A substrates have a poorer structural quality and become polycrystalline beginning with a thickness of 150–200 nm.

  18. Design of Electrically Conductive Structural Composites by Modulating Aligned CVD-Grown Carbon Nanotube Length on Glass Fibers.

    Science.gov (United States)

    He, Delong; Fan, Benhui; Zhao, Hang; Lu, Xiaoxin; Yang, Minhao; Liu, Yu; Bai, Jinbo

    2017-01-25

    Function-integration in glass fiber (GF) reinforced polymer composites is highly desired for developing lightweight structures and devices with improved performance and structural health monitoring. In this study, homogeneously aligned carbon nanotube (CNT) shell was in situ grafted on GF by chemical vapor deposition (CVD). It was demonstrated that the CNT shell thickness and weight fraction can be modulated by controlling the CVD conditions. The obtained hierarchical CNTs-GF/epoxy composites show highly improved electrical conductivity and thermo-mechanical and flexural properties. The composite through-plane and in-plane electrical conductivities increase from a quasi-isolator value to ∼3.5 and 100 S/m, respectively, when the weight fraction of CNTs grafted on GF fabric varies from 0% to 7%, respectively. Meanwhile, the composite storage modulus and flexural modulus and strength improve as high as 12%, 21%, and 26%, respectively, with 100% retention of the glass transition temperature. The reinforcing mechanisms are investigated by analyzing the composite microstructure and the interfacial adhesion and wetting properties of CNTs-GF hybrids. Moreover, the specific damage-related resistance variation characteristics could be employed to in situ monitor the structural health state of the composites. The outstanding electrical and structural properties of the CNTs-GF composites were due to the specific interfacial and interphase structures created by homogeneously grafting aligned CNTs on each GF of the fabric.

  19. Z-Contrast STEM Imaging of Long-Range Ordered Structures in Epitaxially Grown CoPt Nanoparticles

    Directory of Open Access Journals (Sweden)

    Kazuhisa Sato

    2013-01-01

    Full Text Available We report on atomic structure imaging of epitaxial L10 CoPt nanoparticles using chemically sensitive high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM. Highly ordered nanoparticles formed by annealing at 973 K show single-variant structure with perpendicular c-axis orientation, while multivariant ordered domains are frequently observed for specimens annealed at 873 K. It was found that the (001 facets of the multivariant particles are terminated by Co atoms rather than by Pt, presumably due to the intermediate stage of atomic ordering. Coexistence of single-variant particles and multivariant particles in the same specimen film suggests that the interfacial energy between variant domains be small enough to form such structural domains in a nanoparticle as small as 4 nm in diameter.

  20. The morpho-anatomical structure of the leaves of artichoke (Cynara scolymus L. grown in the Republic of Moldova

    Directory of Open Access Journals (Sweden)

    Cristina C. Ciobanu

    2012-03-01

    Full Text Available Artichoke ( Cynara scolymus L. was introduced in the collection of medicinal plants of the Centre for the cultivation of medicinal plants of The State Medical and Pharmaceutical University «Nicolae Testemiţanu» in 2002 ( Bodrug 2005 . We carried out morphological and anatomical study of leaves of the artichoke with a view to determining the adaptive anatomical structures of the leaf to the climatic conditions of the Republic of Moldova, as well as to elucidate specific anatomical structures to identify the medicinal drug and medicinal plant.

  1. Structural characterization of metastable hcp-Ni thin films epitaxially grown on Au(100) single-crystal underlayers

    International Nuclear Information System (INIS)

    Ohtake, Mitsuru; Tanaka, Takahiro; Futamoto, Masaaki; Kirino, Fumiyoshi

    2010-01-01

    Ni(1120) epitaxial thin films with hcp structure were prepared on Au(100) single-crystal underlayers at 100 deg. C by ultra high vacuum molecular beam epitaxy. The detailed film structure is studied by in situ reflection high energy electron diffraction, x-ray diffraction, and transmission electron microscopy. The hcp-Ni film consists of two types of variants whose c-axes are rotated around the film normal by 90 deg. each other. An atomically sharp boundary is recognized between the film and the underlayer, where misfit dislocations are introduced. Presence of such dislocations seems to relieve the strain caused by the lattice mismatch between the film and the underlayer.

  2. Surface structures of normal paraffins and cyclohexane monolayers and thin crystals grown on the (111) crystal face of platinum. A low-energy electron diffraction study

    International Nuclear Information System (INIS)

    Firment, L.E.; Somorjai, G.A.

    1977-01-01

    The surfaces of the normal paraffins (C 3 --C 8 ) and cyclohexane have been studied using low-energy electron diffraction (LEED). The samples were prepared by vapor deposition on the (111) face of a platinum single crystal in ultrahigh vacuum, and were studied both as thick films and as adsorbed monolayers. These molecules form ordered monolayers on the clean metal surface in the temperature range 100--220 K and at a vapor flux corresponding to 10 -7 Torr. In the adsorbed monolayers of the normal paraffins (C 4 --C 8 ), the molecules lie with their chain axes parallel to the Pt surface and Pt[110]. The paraffin monolayer structures undergo order--disorder transitions as a function of temperature. Multilayers condensed upon the ordered monolayers maintained the same orientation and packing as found in the monolayers. The surface structures of the growing organic crystals do not corresond to planes in their reported bulk crystal structures and are evidence for epitaxial growth of pseudomorphic crystal forms. Multilayers of n-octane and n-heptane condensed upon disordered monolayers have also grown with the (001) plane of the triclinic bulk crystal structures parallel to the surface. n-Butane has three monolayer structures on Pt(111) and one of the three is maintained during growth of the crystal. Cyclohexane forms an ordered monolayer, upon which a multilayer of cyclohexane grows exhibiting the (001) surface orientation of the monoclinic bulk crystal structure. Surface structures of saturated hydrocarbons are found to be very susceptible to electron beam induced damage. Surface charging interferes with LEED only at sample thicknesses greater than 200 A

  3. Structural characterisation of the exopolysaccharide produced by Lactobacillus delbrückii subspecies bulgaricus rr grown in skimmed milk

    NARCIS (Netherlands)

    Vliegenthart, J.F.G.; Gruter, M.; Leeflang, B.R.; Kuiper, J.; Kamerling, J.P.

    1993-01-01

    The exopolysaccharide of Lactobacillus delbrückii subsp. bulgaricus rr. isolated from skimmed milk, is a heteropolymer of D-galactopyranosyl, D-glucopyranosyl, and L-rhamnopyranosyl residues in the molar ratio 5:1:1. The structure was established by linkage analysis and 1D and 2D NMR spectroscopy of

  4. Interface manipulation in GaxIn1-xAs/InP multiple layer structures grown by chemical beam epitaxy

    NARCIS (Netherlands)

    Rongen, R.T.H.; van Rijswijk, A.J.C.; Leijs, M.R.; Es, van C.M.; Vonk, H.; Wolter, J.H.

    1997-01-01

    In this study the control of interfacial layers in nanometre thin heterostructures is demonstrated by variation of the growth interruption sequence (GIS) at the binary - ternary interfaces. All samples have been prepared by chemical beam epitaxy simultaneously growing the structures on exact (100)

  5. Structural, optical and magnetic properties of nanocrystalline Co-doped ZnO thin films grown by sol-gel

    Energy Technology Data Exchange (ETDEWEB)

    Kayani, Zohra Nazir; Shah, Iqra; Zulfiqar, Bareera; Sabah, Aneeqa [Lahore College for Women Univ., Lahore (Pakistan); Riaz, Saira; Naseem, Shahzad [Univ. of the Punjab, Lahore (Pakistan). Centre of Excellence in Solid State Physics

    2018-04-01

    Cobalt-doped ZnO thin films have been deposited using a sol-gel route by changing the number of coats on the substrate from 6 to 18. This project deals with various film thicknesses by increasing the number of deposited coats. The effect of thickness on structural, magnetic, surface morphology and optical properties of Co-doped ZnO thin film was studied. The crystal structure of the Co-doped ZnO films was investigated by X-ray diffraction. The films have polycrystalline wurtzite hexagonal structures. A Co{sup 2+} ion takes the place of a Zn{sup 2+} ion in the lattice without creating any distortion in its hexagonal wurtzite structure. An examination of the optical transmission spectra showed that the energy band gap of the Co-doped ZnO films increased from 3.87 to 3.97 eV with an increase in the number of coatings on the substrate. Ferromagnetic behaviour was confirmed by measurements using a vibrating sample magnetometer. The surface morphology of thin films was assessed by scanning electron microscope. The grain size on the surface of thin films increased with an increase in the number of coats.

  6. Growth of monolithic full-color GaN-based LED with intermediate carrier blocking layers

    Energy Technology Data Exchange (ETDEWEB)

    El-Ghoroury, Hussein S.; Yeh, Milton; Chen, J. C., E-mail: jc.chen@ostendo.com; Li, X.; Chuang, Chih-Li [EPI Lab, Ostendo Technologies, Inc., 679 Brea Canyon Rd, Walnut, CA 91789 (United States)

    2016-07-15

    Specially designed intermediate carrier blocking layers (ICBLs) in multi-active regions of III-nitride LEDs were shown to be effective in controlling the carrier injection distribution across the active regions. In principle, the majority of carriers, both holes and electrons, can be guided into targeted quantum wells and recombine to generate light of specific wavelengths at controlled current-densities. Accordingly we proposed and demonstrated a novel monolithic InGaN-based LED to achieve three primary colors of light from one device at selected current densities. This LED structure, which has three different sets of quantum wells separated with ICBLs for three primary red-green-blue (RGB) colors, was grown by metal-organic chemical vapor deposition (MOCVD). Results show that this LED can emit light ranging from 460 to 650 nm to cover the entire visible spectrum. The emission wavelength starts at 650 nm and then decreases to 460 nm or lower as the injection current increases. In addition to three primary colors, many other colors can be obtained by color mixing techniques. To the best of our knowledge, this is the first demonstration of monolithic full-color LED grown by a simple growth technique without using re-growth process.

  7. Growth of monolithic full-color GaN-based LED with intermediate carrier blocking layers

    International Nuclear Information System (INIS)

    El-Ghoroury, Hussein S.; Yeh, Milton; Chen, J. C.; Li, X.; Chuang, Chih-Li

    2016-01-01

    Specially designed intermediate carrier blocking layers (ICBLs) in multi-active regions of III-nitride LEDs were shown to be effective in controlling the carrier injection distribution across the active regions. In principle, the majority of carriers, both holes and electrons, can be guided into targeted quantum wells and recombine to generate light of specific wavelengths at controlled current-densities. Accordingly we proposed and demonstrated a novel monolithic InGaN-based LED to achieve three primary colors of light from one device at selected current densities. This LED structure, which has three different sets of quantum wells separated with ICBLs for three primary red-green-blue (RGB) colors, was grown by metal-organic chemical vapor deposition (MOCVD). Results show that this LED can emit light ranging from 460 to 650 nm to cover the entire visible spectrum. The emission wavelength starts at 650 nm and then decreases to 460 nm or lower as the injection current increases. In addition to three primary colors, many other colors can be obtained by color mixing techniques. To the best of our knowledge, this is the first demonstration of monolithic full-color LED grown by a simple growth technique without using re-growth process.

  8. Electron beam induced coloration and luminescence in layered structure of WO3 thin films grown by pulsed dc magnetron sputtering

    International Nuclear Information System (INIS)

    Karuppasamy, A.; Subrahmanyam, A.

    2007-01-01

    Tungsten oxide thin films have been deposited by pulsed dc magnetron sputtering of tungsten in argon and oxygen atmosphere. The as-deposited WO 3 film is amorphous, highly transparent, and shows a layered structure along the edges. In addition, the optical properties of the as-deposited film show a steplike behavior of extinction coefficient. However, the electron beam irradiation (3.0 keV) of the as-deposited films results in crystallization, coloration (deep blue), and luminescence (intense red emission). The above changes in physical properties are attributed to the extraction of oxygen atoms from the sample and the structural modifications induced by electron bombardment. The present method of coloration and luminescence has a potential for fabricating high-density optical data storage device

  9. Structural and optical characterization of self-assembled Ge nanocrystal layers grown by plasma-enhanced chemical vapor deposition.

    Science.gov (United States)

    Saeed, Saba; Buters, Frank; Dohnalova, Katerina; Wosinski, Lech; Gregorkiewicz, Tom

    2014-10-10

    We present a structural and optical study of solid-state dispersions of Ge nanocrystals prepared by plasma-enhanced chemical vapor deposition. Structural analysis shows the presence of nanocrystalline germanium inclusions embedded in an amorphous matrix of Si-rich SiO(2).Optical characterization reveals two prominent emission bands centered around 2.6 eV and 3.4 eV, and tunable by excitation energy. In addition, the lower energy band shows an excitation power-dependent blue shift of up to 0.3 eV. Decay dynamics of the observed emission contains fast (nanosecond) and slow (microseconds) components, indicating contributions of several relaxation channels. Based on these material characteristics, a possible microscopic origin of the individual emission bands is discussed.

  10. Structural study and fabrication of nano-pattern on ultra thin film of Ag grown by magnetron sputtering

    International Nuclear Information System (INIS)

    Banerjee, S.; Mukherjee, S.; Kundu, S.

    2001-01-01

    We present the structural study of ultra thin Ag films using grazing incidence x-ray reflectivity and the modification of these films with the tip of an atomic force microscope. Ag thin films are deposited using dc magnetron sputtering on a Si(001) substrate. Initially, the growth of the film is carpet like and above a certain thickness (∼42 A) the film structure changes to form mounds. This ultra thin film of Ag having carpet-like growth can be modified by the tip of an atomic force microscope, which occurs due to the porous nature of the film. A periodic pattern of nanometer dimensions has been fabricated on this film using the atomic force microscope tip. (author)

  11. Crystal Structure and Ferroelectric Properties of ε-Ga2O3 Films Grown on (0001)-Sapphire.

    Science.gov (United States)

    Mezzadri, Francesco; Calestani, Gianluca; Boschi, Francesco; Delmonte, Davide; Bosi, Matteo; Fornari, Roberto

    2016-11-21

    The crystal structure and ferroelectric properties of ε-Ga 2 O 3 deposited by low-temperature MOCVD on (0001)-sapphire were investigated by single-crystal X-ray diffraction and the dynamic hysteresis measurement technique. A thorough investigation of this relatively unknown polymorph of Ga 2 O 3 showed that it is composed of layers of both octahedrally and tetrahedrally coordinated Ga 3+ sites, which appear to be occupied with a 66% probability. The refinement of the crystal structure in the noncentrosymmetric space group P6 3 mc pointed out the presence of uncompensated electrical dipoles suggesting ferroelectric properties, which were finally demonstrated by independent measurements of the ferroelectric hysteresis. A clear epitaxial relation is observed with respect to the c-oriented sapphire substrate, with the Ga 2 O 3 [10-10] direction being parallel to the Al 2 O 3 direction [11-20], yielding a lattice mismatch of about 4.1%.

  12. Effect of Arbuscular Mycorrhizal Fungi on Plant Biomass and the Rhizosphere Microbial Community Structure of Mesquite Grown in Acidic Lead/Zinc Mine Tailings

    Science.gov (United States)

    Solís-Domínguez, Fernando A.; Valentín-Vargas, Alexis; Chorover, Jon; Maier, Raina M.

    2011-01-01

    Mine tailings in arid and semi-arid environments are barren of vegetation and subject to eolian dispersion and water erosion. Revegetation is a cost-effective strategy to reduce erosion processes and has wide public acceptance. A major cost of revegetation is the addition of amendments, such as compost, to allow plant establishment. In this paper we explore whether arbuscular mycorrhizal fungi (AMF) can help support plant growth in tailings at a reduced compost concentration. A greenhouse experiment was performed to determine the effects of three AMF inocula on biomass, shoot accumulation of heavy metals, and changes in the rhizosphere microbial community structure of the native plant Prosopis juliflora (mesquite). Plants were grown in an acidic lead/zinc mine tailings amended with 10% (w/w) compost amendment, which is slightly sub-optimal for plant growth in these tailings. After two months, AMF-inoculated plants showed increased dry biomass and root length (p tailings. Mesquite shoot tissue lead and zinc concentrations did not exceed domestic animal toxicity limits regardless of whether AMF inoculation was used. The rhizosphere microbial community structure was assessed using denaturing gradient gel electrophoresis (DGGE) profiles of the small subunit RNA gene for bacteria and fungi. Canonical correspondence analysis (CCA) of DGGE profiles showed that the rhizosphere fungal community structure at the end of the experiment was significantly different from the community structure in the tailings, compost, and AMF inocula prior to planting. Further, CCA showed that AMF inoculation significantly influenced the development of both the fungal and bacterial rhizosphere community structures after two months. The changes observed in the rhizosphere microbial community structure may be either a direct effect of the AMF inocula, caused by changes in plant physiology induced by AMF, or a combination of both mechanisms. PMID:21211826

  13. Magnitude differences in agronomic, chemical, nutritional, and structural features among different varieties of forage corn grown on dry land and irrigated land.

    Science.gov (United States)

    Xin, Hangshu; Abeysekara, Samen; Zhang, Xuewei; Yu, Peiqiang

    2015-03-11

    In this study, eight varieties of corn forage grown in semiarid western Canada (including Pioneer P2501, Pioneer P39m26, Pioneer P7443, Hyland HL3085, Hyland HLBaxxos, Hyland HLR219, Hyland HLSR22, and Pickseed Silex BT) were selected to explore the effect of irrigation implementation in comparison with nonirrigation on (1) agronomic characteristics, (2) basic chemical profiles explored by using a near-infrared reflectance (NIR) system, and (3) protein and carbohydrate internal structural parameters revealed by using an attenuated total reflectance-Fourier transform infrared spectroscopy (ATR-FTIR) system. Also, principal component analysis (PCA) was performed on spectroscopic data for clarification of differences in molecular structural makeup among the varieties. The results showed that irrigation treatment significantly increased (P forages. Significant interactions of irrigation treatment and corn variety were observed on most agronomic characteristics (DM yield, T/ha, days to tasseling, days to silking) and crude fiber (CF) and ether extract (EE) contents as well as some spectral data such as cellulosic compounds (CELC) peak intensity, peak ratios of CHO third peak to CELC, α-helix to β-sheet, and CHO third peak to amide I. Additionally, the spectral ratios of chemical functional groups that related to structural and nonstructural carbohydrates and protein polymers in forages did not remain constant over corn varieties cultivated with and without water treatment. Moreover, different cultivars had different growth, structure, and nutrition performances in this study. Although significant differences could be found in peak intensities, PCA results indicated some structural similarities existed between two treated corn forages with the exception of HL3085 and HLBaxxos. In conclusion, irrigation and corn variety had interaction effects on agronomic, chemical, nutritional, and structural features. Further study on the optimum level of irrigation for corn forage

  14. Cellular localization of cadmium and structural changes in maize plants grown on a cadmium contaminated soil with and without liming

    Energy Technology Data Exchange (ETDEWEB)

    Vieira da Cunha, Karina Patricia [Federal Rural University of Pernambuco, Department of Agronomy, Recife, PE 52171900 (Brazil); Araujo do Nascimento, Clistenes Williams [Federal Rural University of Pernambuco, Department of Agronomy, Recife, PE 52171900 (Brazil)], E-mail: clistenes@depa.ufrpe.br; Magalhaes de Mendonca Pimentel, Rejane; Pereira Ferreira, Clebio [Federal Rural University of Pernambuco, Department of Agronomy, Recife, PE 52171900 (Brazil)

    2008-12-15

    The effects of different concentrations of soil cadmium (0, 1, 3, 5, 10, and 20 mg kg{sup -1}) on growth, structural changes and cadmium cellular localization in leaves of maize plants (Zea mays L.) were investigated in a pot experiment. The results showed that the structural changes observed in maize leaves were not only a response to the Cd-induced stress but also a cellular mechanism to reduce the free Cd{sup +2} in the cytoplasm. However, this mechanism seems to be efficient only up to a Cd concentration in leaves between 27 and 35 mg kg{sup -1} for soils without and with liming, respectively. The cellular response varied with both the Cd concentration in soil and liming. For limed soil, Cd was preferentially accumulated in the apoplast while for unlimed soils Cd was more evenly distributed into the cells. The ability of Cd accumulation depended on the leaf tissue considered. The apoplast collenchyma presented the highest Cd concentration followed by the endodermis, perycicle, xylem, and epidermis. On the other hand, symplast Cd accumulated mainly in the endodermis, bundle sheath cells, parenchyma, and phloem. Based on the structural changes and growth reduction, the critical toxic concentration of soil Cd to maize plants is between 5 and 10 mg kg{sup -1}.

  15. Cellular localization of cadmium and structural changes in maize plants grown on a cadmium contaminated soil with and without liming

    International Nuclear Information System (INIS)

    Vieira da Cunha, Karina Patricia; Araujo do Nascimento, Clistenes Williams; Magalhaes de Mendonca Pimentel, Rejane; Pereira Ferreira, Clebio

    2008-01-01

    The effects of different concentrations of soil cadmium (0, 1, 3, 5, 10, and 20 mg kg -1 ) on growth, structural changes and cadmium cellular localization in leaves of maize plants (Zea mays L.) were investigated in a pot experiment. The results showed that the structural changes observed in maize leaves were not only a response to the Cd-induced stress but also a cellular mechanism to reduce the free Cd +2 in the cytoplasm. However, this mechanism seems to be efficient only up to a Cd concentration in leaves between 27 and 35 mg kg -1 for soils without and with liming, respectively. The cellular response varied with both the Cd concentration in soil and liming. For limed soil, Cd was preferentially accumulated in the apoplast while for unlimed soils Cd was more evenly distributed into the cells. The ability of Cd accumulation depended on the leaf tissue considered. The apoplast collenchyma presented the highest Cd concentration followed by the endodermis, perycicle, xylem, and epidermis. On the other hand, symplast Cd accumulated mainly in the endodermis, bundle sheath cells, parenchyma, and phloem. Based on the structural changes and growth reduction, the critical toxic concentration of soil Cd to maize plants is between 5 and 10 mg kg -1

  16. X-ray absorption near-edge structure of GaN with high Mn concentration grown on SiC

    Science.gov (United States)

    Sancho-Juan, O.; Cantarero, A.; Garro, N.; Cros, A.; Martínez-Criado, G.; Salomé, M.; Susini, J.; Olguín, D.; Dhar, S.

    2009-07-01

    By means of x-ray absorption near-edge structure (XANES) several Ga1-xMnxN (0.03grown by molecular beam epitaxy on [0001] SiC substrates. The low mismatch between GaN and SiC allows for a good quality and homogeneity of the material. The measurements were performed in fluorescence mode around both the Ga and Mn K edges. All samples studied present a similar Mn ionization state, very close to 2+, and tetrahedral coordination. In order to interpret the near-edge structure, we have performed ab initio calculations using the full potential linear augmented plane wave method as implemented in the Wien2k code. The calculations show the appearance of a Mn bonding \\mathrm {t_{2}}\\uparrow band localized in the gap region, and the corresponding anti-bonding state \\mathrm {t_{2}}\\downarrow , which seem to be responsible for the double structure which appears at the pre-edge absorption region. The shoulders and main absorption peak of the XANES spectra are attributed to transitions from the Mn(1s) band to the conduction bands, which are partially dipole allowed because of the Mn(4p) contribution to these bands.

  17. X-ray absorption near-edge structure of GaN with high Mn concentration grown on SiC

    Energy Technology Data Exchange (ETDEWEB)

    Sancho-Juan, O; Cantarero, A; Garro, N; Cros, A [Materials Science Institute, University of Valencia, PO Box 22085, E46071 Valencia (Spain); Martinez-Criado, G; Salome, M; Susini, J [European Synchrotron Radiation Facility, 6 rue Jules Horowitz, 38043 Grenoble (France); Olguin, D [Dept. de Fisica, CINVESTAV-IPN, 07300 Mexico D F (Mexico); Dhar, S [Experimentalphysik, Universitaet Duisburg-Essen, Lotharstrasse 1, 47057 Duisburg (Germany)

    2009-07-22

    By means of x-ray absorption near-edge structure (XANES) several Ga{sub 1-x}Mn{sub x}N (0.03grown by molecular beam epitaxy on [0001] SiC substrates. The low mismatch between GaN and SiC allows for a good quality and homogeneity of the material. The measurements were performed in fluorescence mode around both the Ga and Mn K edges. All samples studied present a similar Mn ionization state, very close to 2+, and tetrahedral coordination. In order to interpret the near-edge structure, we have performed ab initio calculations using the full potential linear augmented plane wave method as implemented in the Wien2k code. The calculations show the appearance of a Mn bonding t{sub 2}arrow up band localized in the gap region, and the corresponding anti-bonding state t{sub 2}arrow down, which seem to be responsible for the double structure which appears at the pre-edge absorption region. The shoulders and main absorption peak of the XANES spectra are attributed to transitions from the Mn(1s) band to the conduction bands, which are partially dipole allowed because of the Mn(4p) contribution to these bands.

  18. Epitaxial structure and electronic property of β-Ga2O3 films grown on MgO (100) substrates by pulsed-laser deposition

    Science.gov (United States)

    Wakabayashi, Ryo; Yoshimatsu, Kohei; Hattori, Mai; Ohtomo, Akira

    2017-10-01

    We investigated heteroepitaxial growth of Si-doped Ga2O3 films on MgO (100) substrates by pulsed-laser deposition as a function of growth temperature (Tg) to find a strong correlation between the structural and electronic properties. The films were found to contain cubic γ-phase and monoclinic β-phase, the latter of which indicated rotational twin domains when grown at higher Tg. The formation of the metastable γ-phase and twin-domain structure in the stable β-phase are discussed in terms of the in-plane epitaxial relationships with a square MgO lattice, while crystallinity of the β-phase degraded monotonically with decreasing Tg. The room-temperature conductivity indicated a maximum at the middle of Tg, where the β-Ga2O3 layer was relatively highly crystalline and free from the twin-domain structure. Moreover, both crystallinity and conductivity of β-Ga2O3 films on the MgO substrates were found superior to those on α-Al2O3 (0001) substrates. A ratio of the conductivity, attained to the highest quantity on each substrate, was almost three orders of magnitude.

  19. Critical thickness of high structural quality SrTiO3 films grown on orthorhombic (101) DyScO3

    International Nuclear Information System (INIS)

    Biegalski, M. D.; Trolier-McKinstry, S.; Schlom, D. G.; Fong, D. D.; Eastman, J. A.; Fuoss, P. H.; Streiffer, S. K.; Heeg, T.; Schubert, J.; Tian, W.; Nelson, C. T.; Pan, X. Q.; Hawley, M. E.; Bernhagen, M.; Reiche, P.; Uecker, R.

    2008-01-01

    Strained epitaxial SrTiO 3 films were grown on orthorhombic (101) DyScO 3 substrates by reactive molecular-beam epitaxy. The epitaxy of this substrate/film combination is cube on cube with a pseudocubic out-of-plane (001) orientation. The strain state and structural perfection of films with thicknesses ranging from 50 to 1000 A were examined using x-ray scattering. The critical thickness at which misfit dislocations was introduced was between 350 and 500 A. These films have the narrowest rocking curves (full width at half maximum) ever reported for any heteroepitaxial oxide film (0.0018 deg.). Only a modest amount of relaxation is seen in films exceeding the critical thicknesses even after postdeposition annealing at 700 deg. C in 1 atm of oxygen. The dependence of strain relaxation on crystallographic direction is attributed to the anisotropy of the substrate. These SrTiO 3 films show structural quality more typical of semiconductors such as GaAs and silicon than perovskite materials; their structural relaxation behavior also shows similarity to that of compound semiconductor films

  20. Critical thickness of high structural quality SrTiO{sub 3} films grown on orthorhombic (101) DyScO{sub 3}.

    Energy Technology Data Exchange (ETDEWEB)

    Biegalski, M. D.; Trolier-McKinstry, S.; Nelson, C. T.; Schlom, D. G.; Fong, D. D.; Eastman, J. A.; Fuoss, P. H.; Streiffer, S. K.; Heeg, T.; Schubert, J.; Tian, W.; Pan, X. Q.; Hawley, M. E.; Bernhagen, M.; Reiche, P.; Uecker, R.; Pennsylvania State Univ.; Forschungszentrum Julich; Univ. Michigan; LANL; Max-Born-Strabe

    2008-12-01

    Strained epitaxial SrTiO{sub 3} films were grown on orthorhombic (101) DyScO{sub 3} substrates by reactive molecular-beam epitaxy. The epitaxy of this substrate/film combination is cube on cube with a pseudocubic out-of-plane (001) orientation. The strain state and structural perfection of films with thicknesses ranging from 50 to 1000 {angstrom} were examined using x-ray scattering. The critical thickness at which misfit dislocations was introduced was between 350 and 500 {angstrom}. These films have the narrowest rocking curves (full width at half maximum) ever reported for any heteroepitaxial oxide film (0.0018{sup o}). Only a modest amount of relaxation is seen in films exceeding the critical thicknesses even after postdeposition annealing at 700 C in 1 atm of oxygen. The dependence of strain relaxation on crystallographic direction is attributed to the anisotropy of the substrate. These SrTiO{sub 3} films show structural quality more typical of semiconductors such as GaAs and silicon than perovskite materials; their structural relaxation behavior also shows similarity to that of compound semiconductor films.

  1. Broad range tuning of structural and optical properties of Znx Mg1−x O nanostructures grown by vapor transport method

    International Nuclear Information System (INIS)

    Vanjaria, Jignesh V; Azhar, Ebraheem Ali; Yu, Hongbin

    2016-01-01

    One-dimensional (1D) Zn x Mg 1−x O nanomaterials have drawn global attention due to their remarkable chemical and physical properties, and their diverse current and future technological applications. In this work, 1D ZnMgO nanostructures with different magnesium concentrations and different morphologies were grown directly on zinc oxide-coated silicon substrates by thermal evaporation of zinc oxide, magnesium boride and graphite powders. Highly well-defined Mg-rich ZnMgO nanorods with a rock salt structure and Zn-rich ZnMgO nanostructures with a wurtzite structure have been deposited individually by careful optimization of the source mixture and process parameters. Structural and optical properties of the deposited products were studied by scanning electron microscopy, energy dispersive x-ray spectroscopy, x-ray diffraction, and Raman spectroscopy. Cathodoluminescence measurements demonstrate strong dominant peaks at 3.3 eV in Mg poor ZnMgO nanostructures and 4.8 eV in Mg rich nanostructures implying that the ZnMgO nanostructures can be used for the fabrication of deep UV optoelectronic devices. A mechanism for the formation and achieved diverse morphology of the ZnMgO nanostructures was proposed based on the characterization results. (paper)

  2. Electrical characterizations of MIS structures based on variable-gap n(p)-HgCdTe grown by MBE on Si(0 1 3) substrates

    Science.gov (United States)

    Voitsekhovskii, A. V.; Nesmelov, S. N.; Dzyadukh, S. M.; Varavin, V. S.; Dvoretskii, S. A.; Mikhailov, N. N.; Yakushev, M. V.; Sidorov, G. Yu.

    2017-12-01

    Metal-insulator-semiconductor (MIS) structures based on n(p)-Hg1-xCdxTe (x = 0.22-0.40) with near-surface variable-gap layers were grown by the molecular-beam epitaxy (MBE) technique on the Si (0 1 3) substrates. Electrical properties of MIS structures were investigated experimentally at various temperatures (9-77 K) and directions of voltage sweep. The ;narrow swing; technique was used to determine the spectra of fast surface states with the exception of hysteresis effects. It is established that the density of fast surface states at the MCT/Al2O3 interface at a minimum does not exceed 3 × 1010 eV-1 × cm-2. For MIS structures based on n-MCT/Si(0 1 3), the differential resistance of the space-charge region in strong inversion mode in the temperature range 50-90 K is limited by the Shockley-Read-Hall generation in the space-charge region.

  3. Structural properties of Bi{sub 2−x}Mn{sub x}Se{sub 3} thin films grown via molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Babakiray, Sercan; Johnson, Trent A.; Borisov, Pavel; Holcomb, Mikel B.; Lederman, David, E-mail: david.lederman@mail.wvu.edu [Department of Physics and Astronomy, West Virginia University, Morgantown, West Virginia 26506-6315 (United States); Marcus, Matthew A. [Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Tarafder, Kartick [Department of Physics, BITS-Pilani Hyderabad Campus, Secunderabad, Andhra Pradesh 500078 (India)

    2015-07-28

    The effects of Mn doping on the structural properties of the topological insulator Bi{sub 2}Se{sub 3} in thin film form were studied in samples grown via molecular beam epitaxy. Extended x-ray absorption fine structure measurements, supported by density functional theory calculations, indicate that preferential incorporation occurs substitutionally in Bi sites across the entire film volume. This finding is consistent with x-ray diffraction measurements which show that the out of plane lattice constant expands while the in plane lattice constant contracts as the Mn concentration is increased. X-ray photoelectron spectroscopy indicates that the Mn valency is 2+ and that the Mn bonding is similar to that in MnSe. The expansion along the out of plane direction is most likely due to weakening of the Van der Waals interactions between adjacent Se planes. Transport measurements are consistent with this Mn{sup 2+} substitution of Bi sites if additional structural defects induced by this substitution are taken into account.

  4. Effects of substrate temperature, substrate orientation, and energetic atomic collisions on the structure of GaN films grown by reactive sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Schiaber, Ziani S.; Lisboa-Filho, Paulo N.; Silva, José H. D. da [Universidade Estadual Paulista, UNESP, Bauru, São Paulo 17033-360 (Brazil); Leite, Douglas M. G. [Universidade Federal de Itajubá, UNIFEI, Itajubá, Minas Gerais 37500-903 (Brazil); Bortoleto, José R. R. [Universidade Estadual Paulista, UNESP, Sorocaba, São Paulo 18087-180 (Brazil)

    2013-11-14

    The combined effects of substrate temperature, substrate orientation, and energetic particle impingement on the structure of GaN films grown by reactive radio-frequency magnetron sputtering are investigated. Monte-Carlo based simulations are employed to analyze the energies of the species generated in the plasma and colliding with the growing surface. Polycrystalline films grown at temperatures ranging from 500 to 1000 °C clearly showed a dependence of orientation texture and surface morphology on substrate orientation (c- and a-plane sapphire) in which the (0001) GaN planes were parallel to the substrate surface. A large increase in interplanar spacing associated with the increase in both a- and c-parameters of the hexagonal lattice and a redshift of the optical bandgap were observed at substrate temperatures higher than 600 °C. The results showed that the tensile stresses produced during the film's growth in high-temperature deposition ranges were much larger than the expected compressive stresses caused by the difference in the thermal expansion coefficients of the film and substrate in the cool-down process after the film growth. The best films were deposited at 500 °C, 30 W and 600 °C, 45 W, which corresponds to conditions where the out diffusion from the film is low. Under these conditions the benefits of the temperature increase because of the decrease in defect density are greater than the problems caused by the strongly strained lattice that occurr at higher temperatures. The results are useful to the analysis of the growth conditions of GaN films by reactive sputtering.

  5. Comparative structural and electronic studies of hydrogen interaction with isolated versus ordered silicon nanoribbons grown on Ag(110)

    International Nuclear Information System (INIS)

    Dávila, M E; Montero, I; Marele, A; Gómez-Rodríguez, J M; De Padova, P; Hennies, F; Pietzsch, A; Shariati, M N; Le Lay, G

    2012-01-01

    We have investigated the geometry and electronic structure of two different types of self-aligned silicon nanoribbons (SiNRs), forming either isolated SiNRs or a self-assembled 5 × 2/5 × 4 grating on an Ag(110) substrate, by scanning tunnelling microscopy and high resolution x-ray photoelectron spectroscopy. At room temperature we further adsorb on these SiNRs either atomic or molecular hydrogen. The hydrogen absorption process and hydrogenation mechanism are similar for isolated or 5 × 2/5 × 4 ordered SiNRs and are not site selective; the main difference arises from the fact that the isolated SiNRs are more easily attacked and destroyed faster. In fact, atomic hydrogen strongly interacts with any Si atoms, modifying their structural and electronic properties, while molecular hydrogen has first to dissociate. Hydrogen finally etches the Si nanoribbons and their complete removal from the Ag(110) surface could eventually be expected. (paper)

  6. Structural and magnetic properties of Co-doped ZnO thin films grown by ultrasonic spray pyrolysis method

    Science.gov (United States)

    Baghdad, R.; Lemée, N.; Lamura, G.; Zeinert, A.; Hadj-Zoubir, N.; Bousmaha, M.; Bezzerrouk, M. A.; Bouyanfif, H.; Allouche, B.; Zellama, K.

    2017-04-01

    Cobalt-doped ZnO thin films with several different percentage of Co from 0 up to 15 at% were synthesized via a cheap, simple and versatile method i.e. ultrasonic spray pyrolysis at atmospheric pressure and a substrate temperature of 350 °C. The structure of the as-prepared samples was characterized by X-ray diffraction (XRD), Raman spectroscopy and FTIR. The Co-doping effect is revealed by the presence of three additional peaks around 235, 470 and 538 cm-1 respect to the Raman spectra of the unsubstituted film. Fourier transform infrared spectroscopy (FTIR) put in evidence the decrease of the bond force constant f with increasing Co-doping. By ultra-violet visible near infrared (UV-Vis-NIR) spectroscopy on Co-doped samples it was possible to show the presence of additional absorption bands at approximately 570, 620 and 660 nm suggesting that Co2+ ions do not change their oxidation when substituted to zinc and the ZnO lattice does not change its wurtzite structure as well. Finally, all our samples exhibit a paramagnetic behavior without any trace of intrinsic room temperature ferromagnetism.

  7. Studies on structural, morphological and electroresistance properties of sol–gel grown nanostructured PrMnO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Keshvani, M.J. [Binoy Hashmukhbhai (B.H.) Gardi College of Engineering and Technology, Rajkot 361 162 (India); Katba, Savan; Jethva, Sadaf; Udeshi, Malay [Department of Physics, Saurashtra University, Rajkot 360 005 (India); Kataria, Bharat; Ravalia, Ashish [Department of Nanoscience and Advanced Materials, Saurashtra University, Rajkot 360 005 (India); Kuberkar, D.G., E-mail: dgkuberkar@gmail.com [Department of Nanoscience and Advanced Materials, Saurashtra University, Rajkot 360 005 (India)

    2017-04-15

    Highlights: • Nanostructured PrMnO{sub 3} was synthesized at ambient temperatures via sol–gel route. • Particle size dependent transport properties were studied. • Large room temperature ER (∼100%) was recorded. • Electric field controlled band gap engineering was investigated. • Better resistive switching and EPIR for smaller particle sizes was observed. - Abstract: We report the results of the studies on structural, microstructural and transport properties of nanostructured PrMnO{sub 3} (PMO) synthesized by acetate precursor based modified sol-gel route. Role of sintering temperature in the modifications in the physical properties of PMO samples has been studied. Structural analysis, using X-ray diffraction (XRD), reveals the single phasic nature of all the PMO samples, while analysis of TEM reveals the uniform sized distribution of nanoparticles, showing agglomeration effect in samples sintered at higher temperatures. SEM micrographs depict the increase in grain size with sharp boundaries in the samples sintered at higher temperatures. Sintering temperature and size dependent resistivity behavior under different applied electric fields has been understood in the context of grain size and boundary nature. PMO have also been studied for their electroresistance (ER) and electric pulse induced resistance (EPIR) change behavior which are highly useful features for spintronic based practical applications.

  8. [LED lights in dermatology].

    Science.gov (United States)

    Noé, C; Pelletier-Aouizerate, M; Cartier, H

    2017-04-01

    The use in dermatology of light-emitting diodes (LEDs) continues to be surrounded by controversy. This is due mainly to poor knowledge of the physicochemical phases of a wide range of devices that are difficult to compare to one another, and also to divergences between irrefutable published evidence either at the level of in vitro studies or at the cellular level, and discordant clinical results in a variety of different indications: rejuvenation, acne, wound healing, leg ulcers, and cutaneous inflammatory or autoimmune processes. Therapeutic LEDs can emit wavelengths ranging from the ultraviolet, through visible light, to the near infrared (247-1300 nm), but only certain bands have so far demonstrated any real value. We feel certain that if this article remains factual, then readers will have a different, or at least more nuanced, opinion concerning the use of such LED devices in dermatology. Copyright © 2016 Elsevier Masson SAS. All rights reserved.

  9. Structural, morphological and local electric properties of TiO2 thin films grown by pulsed laser deposition

    International Nuclear Information System (INIS)

    Gyoergy, E; Pino, A Perez del; Sauthier, G; Figueras, A; Alsina, F; Pascual, J

    2007-01-01

    Titanium dioxide (TiO 2 ) thin films were synthesized on (1 0 0) Si substrates by reactive pulsed laser deposition (PLD) technique. A frequency quadrupled Nd : YAG (λ = 266 nm, τ FWHM ≅ 5 ns, ν = 10 Hz) laser source was used for the irradiations of metallic Ti targets. The experiments were performed in controlled oxygen atmosphere. Crystallinity, surface morphology and local electric properties of the obtained oxide thin films were investigated by x-ray diffractometry, micro-Raman spectroscopy and current sensing atomic force microscopy. An inter-relation was found between the surface morphology, the crystalline structure and the nano-scale electric properties which open the possibility of synthesizing by the PLD technique TiO 2 thin films with tunable functional properties for future applications such as photocatalysts, gas sensors or solar energy converters

  10. Determination of the Solid Electrolyte Interphase Structure Grown on a Silicon Electrode Using a Fluoroethylene Carbonate Additive

    Energy Technology Data Exchange (ETDEWEB)

    Veith, Gabriel M. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division; Doucet, Mathieu [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Neutron Data Analysis and Visualization Division; Sacci, Robert L. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division; Vacaliuc, Bogdan [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Research Accelerator Division; Baldwin, J. Kevin [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Browning, James F. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Chemical and Engineering Materials Division

    2017-07-24

    In this work we explore how an electrolyte additive (fluorinated ethylene carbonate – FEC) mediates the thickness and composition of the solid electrolyte interphase formed over a silicon anode in situ as a function of state-of-charge and cycle. We show the FEC condenses on the surface at open circuit voltage then is reduced to C-O containing polymeric species around 0.9 V (vs. Li/Li+). The resulting film is about 50 Å thick. Upon lithiation the SEI thickens to 70 Å and becomes more organic-like. With delithiation the SEI thins by 13 Å and becomes more inorganic in nature, consistent with the formation of LiF. This thickening/thinning is reversible with cycling and shows the SEI is a dynamic structure. We compare the SEI chemistry and thickness to 280 Å thick SEI layers produced without FEC and provide a mechanism for SEI formation using FEC additives.

  11. Structural investigations of homoepitaxial Si films grown at low temperature by pulsed magnetron sputtering on Si(111) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Fenske, F. [Hahn-Meitner-Institut Berlin, Abt. Silizium-Photovoltaik, Kekulestr. 5, D-12485 Berlin (Germany)], E-mail: fenske@hmi.de; Schulze, S.; Hietschold, M. [Technische Universitaet Chemnitz, Analytik an Festkoerperoberflaechen, Reichenhainer Str. 70, D-09107 Chemnitz (Germany); Schmidbauer, M. [Institut fuer Kristallzuechtung Berlin, Max-Born-Str.2, D-12489 Berlin (Germany)

    2008-06-02

    Using pulsed magnetron sputtering at low substrate temperature (T{sub s} = 580 {sup o}C) the homoepitaxial growth on Si(111) was studied. The films were comprehensively characterized by cross-section transmission electron microscopy and various diffraction methods. Up to a film thickness of 1240 nm no breakdown of the epitaxial growth was observed. The surface microstructure, characterized by electron backscatter diffraction, exhibits exclusively crystalline structure with (111) orientation. Careful analysis of selected area electron diffraction patterns and high-resolution X-ray diffraction data clearly proves the existence of twinning/stacking faults in the {l_brace}111{r_brace} planes. Besides these defects - which are typical for low-temperature epitaxy - no additional significant defects related to the energetic particle bombardment by the sputter deposition method are observed.

  12. Structural investigations of homoepitaxial Si films grown at low temperature by pulsed magnetron sputtering on Si(111) substrates

    International Nuclear Information System (INIS)

    Fenske, F.; Schulze, S.; Hietschold, M.; Schmidbauer, M.

    2008-01-01

    Using pulsed magnetron sputtering at low substrate temperature (T s = 580 o C) the homoepitaxial growth on Si(111) was studied. The films were comprehensively characterized by cross-section transmission electron microscopy and various diffraction methods. Up to a film thickness of 1240 nm no breakdown of the epitaxial growth was observed. The surface microstructure, characterized by electron backscatter diffraction, exhibits exclusively crystalline structure with (111) orientation. Careful analysis of selected area electron diffraction patterns and high-resolution X-ray diffraction data clearly proves the existence of twinning/stacking faults in the {111} planes. Besides these defects - which are typical for low-temperature epitaxy - no additional significant defects related to the energetic particle bombardment by the sputter deposition method are observed

  13. Effect of nitrogen incorporation on the structural, optical and dielectric properties of reactive sputter grown ITO films

    Energy Technology Data Exchange (ETDEWEB)

    Gartner, M.; Stroescu, H. [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Marin, A., E-mail: alexmarin@icf.ro [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Osiceanu, P. [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Anastasescu, M., E-mail: manastasescu@icf.ro [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Stoica, M.; Nicolescu, M.; Duta, M.; Preda, S. [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Aperathitis, E.; Pantazis, A.; Kampylafka, V. [FORTH-IESL, Crete (Greece); Modreanu, M. [Tyndall National Institute, University College Cork, Cork (Ireland); Zaharescu, M. [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania)

    2014-09-15

    Highlights: • Graded optical model for ITON films is presented. • ITON thin films retain an amorphous structure even after RTA at 500 °C in N{sub 2} ambient. • The lowest resistivity was 2 × 10{sup −3} Ω cm for films deposited in 75%N{sub 2} and RTA at 500 °C. • Films deposited in 75% N{sub 2} and RTA at 500 °C have degenerate semiconductor behavior. • Chemical composition before and after RTA has been analyzed by XPS depth profiling. - Abstract: The changes in the optical, microstructural and electrical properties, following the nitrogen incorporation into indium tin oxide thin films are investigated. The films are formed by r.f. sputtering from an indium-tin-oxide (80% In{sub 2}O{sub 3}–20% SnO{sub 2}) target in a mixture of Ar and N{sub 2} plasma (75% N{sub 2}–25% Ar and 100% N{sub 2} respectively) on fused silica glass substrate. The impact of rapid thermal annealing (up to 500 °C, in N{sub 2} ambient) on the properties of indium tin oxynitride (ITON) thin films is also reported. The UV–vis–NIR ellipsometry (SE) characterization of ITON films was performed assuming several realistic approaches based on various oscillator models, using a chemical composition gradient depth profiling, in agreement with the X-ray photoelectron spectroscopy measurements. The Hall measurements show that the ITON films prepared by r.f. sputtering in 75% N{sub 2} and annealed at 500 °C behave as degenerate semiconductors. X-ray diffraction analysis proved that ITON thin films retain an amorphous structure even after RTA at 500 °C in N{sub 2} ambient and atomic force microscopy showed the formation of continuous and smooth ITON thin films, with a morphology consisting in quasispherical nanometric particles.

  14. CdSe/ZnSe quantum dot structures grown by molecular beam epitaxy with a CdTe submonolayer stressor

    International Nuclear Information System (INIS)

    Sedova, I. V.; Lyublinskaya, O. G.; Sorokin, S. V.; Sitnikova, A. A.; Toropov, A. A.; Donatini, F.; Dang, Si Le; Ivanov, S. V.

    2007-01-01

    A procedure for formation of CdSe quantum dots (QDs) in a ZnSe matrix is suggested. The procedure is based on the introduction of a CdTe submonolayer stressor deposited on the matrix surface just before deposition of the material of the QDs. (For CdTe/ZnSe structure, the relative lattice mismatch is Δa/a ∼ 14%.) The stressor forms small strained islands at the ZnSe surface, thus producing local fields of high elastic stresses controlling the process of the self-assembling of the QDs. According to the data of transmission electron microscopy, this procedure allows a considerable increase in the surface density of QDs, with a certain decrease in their lateral dimensions (down to 4.5 ± 1.5 nm). In the photoluminescence spectra, a noticeable (∼150 meV) shift of the peak to longer wavelengths from the position of the reference CdSe/ZnSe QD structure is observed. The shift is due to some transformation of the morphology of the QDs and an increase in the Cd content in the QDs. Comprehensive studies of the nanostructures by recording and analyzing the excitation spectra of photoluminescence, the time-resolved photoluminescence spectra, and the cathodoluminescence spectra show that the emission spectra involve two types of optical transitions, namely, the type-I transitions in the CdSeTe/ZnSe QDs and the type-II transitions caused mainly by the low cadmium content (Zn,Cd)(Se,Te)/ZnSe layer formed between the QDs

  15. The effect of sputtering gas pressure on the structure and optical properties of MgNiO films grown by radio frequency magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Xie, Wuze; Jiao, Shujie, E-mail: shujiejiao@gmail.com; Wang, Dongbo; Gao, Shiyong; Wang, Jinzhong; Yu, Qingjiang; Li, Hongtao

    2017-05-31

    Highlights: • MgNiO thin films were fabricated by radio frequency magnetron sputtering. • The structure and optical properties of MgNiO films were studied. • The mechanism of phase separation was discussed in detail. • The effect of different sputtering pressure also was discussed. - Abstract: In this study, MgNiO thin films were grown on quartz substrates by radio frequency (RF) magnetron sputtering. The influence of different sputtering pressures on the crystalline and optical properties of MgNiO thin films has been studied. X-ray diffraction measurement indicates that the MgNiO films are cubic structure with (200) preferred orientation. UV–vis transmission spectra show that all the MgNiO thin films show more than 75% transmission at visible region, and the absorption edges of all thin films locate at solar-blind region (220 nm–280 nm). The lattice constant and Mg content of MgNiO samples were calculated using X-ray diffraction and transmission spectra data. The phase separation is observed both in the X-ray diffraction patterns and transmission spectra, and the phase separation is studied in detail based on the crystal growth theory and sputtering process.

  16. Photoluminescence and surface photovoltage spectroscopy characterization of highly strained InGaAs/GaAs quantum well structures grown by metal organic vapor phase epitaxy

    International Nuclear Information System (INIS)

    Chan, C.H.; Wu, J.D.; Huang, Y.S.; Hsu, H.P.; Tiong, K.K.; Su, Y.K.

    2010-01-01

    Photoluminescence (PL) and surface photovoltage spectroscopy (SPS) are used to characterize a series of highly strained In x Ga 1-x As/GaAs quantum well (QW) structures grown by metal organic vapor phase epitaxy with different indium compositions (0.395 ≤ x ≤ 0.44) in the temperature range of 20 K ≤ T ≤ 300 K. The PL features show redshift in peak positions and broadened lineshape with increasing indium composition. The S-shaped temperature dependent PL spectra have been attributed to carrier localization effect resulting from the presence of indium clusters at QW interfaces. A lineshape fit of features in the differential surface photovoltage (SPV) spectra has been used to determine the transition energies accurately. At temperature below 100 K, the light-hole (LH) related feature shows a significant phase difference as compared to that of heavy-hole (HH) related features. The phase change of the LH feature can be explained by the existence of type-II configuration for the LH valence band and the process of separation of carriers within the QWs together with possible capture by the interface defect traps. A detailed analysis of the observed phenomena enables the identification of spectral features and to evaluate the band lineup of the QWs. The results demonstrate the usefulness of PL and SPS for the contactless and nondestructive characterization of highly strained InGaAs/GaAs QW structures.

  17. Resistance Switching Memory Characteristics of Si/CaF2/CdF2 Quantum-Well Structures Grown on Metal (CoSi2) Layer

    Science.gov (United States)

    Denda, Junya; Uryu, Kazuya; Watanabe, Masahiro

    2013-04-01

    A novel scheme of resistance switching random access memory (ReRAM) devices fabricated using Si/CaF2/CdF2/CaF2/Si quantum-well structures grown on metal CoSi2 layer formed on a Si substrate has been proposed, and embryonic write/erase memory operation has been demonstrated at room temperature. It has been found that the oxide-mediated epitaxy (OME) technique for forming the CoSi2 layer on Si dramatically improves the stability and reproducibility of the current-voltage (I-V) curve. This technology involves 10-nm-thick Co layer deposition on a protective oxide prepared by boiling in a peroxide-based solution followed by annealing at 550 °C for 30 min for silicidation in ultrahigh vacuum. A switching voltage of lower than 1 V, a peak current density of 32 kA/cm2, and an ON/OFF ratio of 10 have been observed for the sample with the thickness sequence of 0.9/0.9/2.5/0.9/5.0 nm for the respective layers in the Si/CaF2/CdF2/CaF2/Si structure. Results of surface morphology analysis suggest that the grain size of crystal islands with flat surfaces strongly affects the quality of device characteristics.

  18. Structural properties, crystal quality and growth modes of MOCVD-grown AlN with TMAl pretreatment of sapphire substrate

    KAUST Repository

    Sun, Haiding; Wu, Feng; Altahtamouni, Talal Mohammed Ahmad; Alfaraj, Nasir; Li, Kun; Detchprohm, Theeradetch; Dupuis, Russell; Li, Xiaohang

    2017-01-01

    The growth of high quality AlN epitaxial films relies on precise control of the initial growth stages. In this work, we examined the influence of the trimethylaluminum (TMAl) pretreatment of sapphire substrates on the structural properties, crystal quality and growth modes of heteroepitaxial AlN films on (0001) sapphire substrates. Without the pretreatment, the AlN films nucleated on the smooth surface but exhibited mixed crystallographic Al- (N-) polarity, resulting in rough AlN film surfaces. With increasing the pretreatment time from 1 to 5 s, the N-polarity started to be impeded. However, small islands were formed on sapphire surface due to the decompostion of TMAl. As a result, small voids became noticeable at the nucleation layer (NL) because the growth started as quasi three-dimensional (3D) but transformed to 2D mode as the film grew thicker and got coalesced, leading to smoother and Al-polar films. On the other hand, longer pretreatment time of 40 s formed large 3D islands on sapphire, and thus initiated a 3D-growth mode of the AlN film, generating Al-polar AlN nanocolumns with different facets, which resulted into rougher film surfaces. The epitaxial growth modes and their correlation with the AlN film crystal quality under different TMAl pretreatments are also discussed.

  19. Structural and Morphological Properties of Nanostructured ZnO Particles Grown by Ultrasonic Spray Pyrolysis Method with Horizontal Furnace

    Directory of Open Access Journals (Sweden)

    G. Flores-Carrasco

    2014-01-01

    Full Text Available ZnO nanoparticles were synthesized in a horizontal furnace at 500°C using different zinc nitrate hexahydrate concentrations (0.01 and 0.1 M as reactive solution by ultrasonic spray pyrolysis method. The physical-chemical properties of synthesized ZnO nanoparticles have been characterized by thermogravimetric analysis (TGA, X-ray diffraction (XRD, scanning electron microscopy (SEM, energy dispersive spectroscopy (EDS, and high resolution transmission electron microscopy (HRTEM. With the TGA is has optimized the temperature at which the initial reactive (Zn(NO32·6H2O, is decomposed completely to give way to its corresponding oxide, ZnO. SEM revealed secondary particles with a quasispherical shape that do not change significantly with the increasing of precursor solution concentration as well as some content of the broken spheres. Increasing the precursor solution concentration leads to the increase in the average size of ZnO secondary particles from 248±73 to 470±160 nm; XRD reveals the similar tendency for the crystallite size which changes from 23±4 to 45±4 nm. HRTEM implies that the secondary particles are with hierarchical structure composed of primary nanosized subunits. These results showed that the precursor concentration plays an important role in the evolution on the size, stoichiometry, and morphology of ZnO nanoparticles.

  20. Structure Shift of GaN Among Nanowall Network, Nanocolumn, and Compact Film Grown on Si (111) by MBE.

    Science.gov (United States)

    Zhong, Aihua; Fan, Ping; Zhong, Yuanting; Zhang, Dongping; Li, Fu; Luo, Jingting; Xie, Yizhu; Hane, Kazuhiro

    2018-02-13

    Structure shift of GaN nanowall network, nanocolumn, and compact film were successfully obtained on Si (111) by plasma-assisted molecular beam epitaxy (MBE). As is expected, growth of the GaN nanocolumns was observed in N-rich condition on bare Si, and the growth shifted to compact film when the Ga flux was improved. Interestingly, if an aluminum (Al) pre-deposition for 40 s was carried out prior to the GaN growth, GaN grows in the form of the nanowall network. Results show that the pre-deposited Al exits in the form of droplets with typical diameter and height of ~ 80 and ~ 6.7 nm, respectively. A growth model for the nanowall network is proposed and the growth mechanism is discussed. GaN grows in the area without Al droplets while the growth above Al droplets is hindered, resulting in the formation of continuous GaN nanowall network that removes the obstacles of nano-device fabrication.

  1. Structural properties, crystal quality and growth modes of MOCVD-grown AlN with TMAl pretreatment of sapphire substrate

    KAUST Repository

    Sun, Haiding

    2017-08-08

    The growth of high quality AlN epitaxial films relies on precise control of the initial growth stages. In this work, we examined the influence of the trimethylaluminum (TMAl) pretreatment of sapphire substrates on the structural properties, crystal quality and growth modes of heteroepitaxial AlN films on (0001) sapphire substrates. Without the pretreatment, the AlN films nucleated on the smooth surface but exhibited mixed crystallographic Al- (N-) polarity, resulting in rough AlN film surfaces. With increasing the pretreatment time from 1 to 5 s, the N-polarity started to be impeded. However, small islands were formed on sapphire surface due to the decompostion of TMAl. As a result, small voids became noticeable at the nucleation layer (NL) because the growth started as quasi three-dimensional (3D) but transformed to 2D mode as the film grew thicker and got coalesced, leading to smoother and Al-polar films. On the other hand, longer pretreatment time of 40 s formed large 3D islands on sapphire, and thus initiated a 3D-growth mode of the AlN film, generating Al-polar AlN nanocolumns with different facets, which resulted into rougher film surfaces. The epitaxial growth modes and their correlation with the AlN film crystal quality under different TMAl pretreatments are also discussed.

  2. Al2O3 Passivation Effect in HfO2·Al2O3 Laminate Structures Grown on InP Substrates.

    Science.gov (United States)

    Kang, Hang-Kyu; Kang, Yu-Seon; Kim, Dae-Kyoung; Baik, Min; Song, Jin-Dong; An, Youngseo; Kim, Hyoungsub; Cho, Mann-Ho

    2017-05-24

    The passivation effect of an Al 2 O 3 layer on the electrical properties was investigated in HfO 2 -Al 2 O 3 laminate structures grown on indium phosphide (InP) substrate by atomic-layer deposition. The chemical state obtained using high-resolution X-ray photoelectron spectroscopy showed that interfacial reactions were dependent on the presence of the Al 2 O 3 passivation layer and its sequence in the HfO 2 -Al 2 O 3 laminate structures. Because of the interfacial reaction, the Al 2 O 3 /HfO 2 /Al 2 O 3 structure showed the best electrical characteristics. The top Al 2 O 3 layer suppressed the interdiffusion of oxidizing species into the HfO 2 films, whereas the bottom Al 2 O 3 layer blocked the outdiffusion of In and P atoms. As a result, the formation of In-O bonds was more effectively suppressed in the Al 2 O 3 /HfO 2 /Al 2 O 3 /InP structure than that in the HfO 2 -on-InP system. Moreover, conductance data revealed that the Al 2 O 3 layer on InP reduces the midgap traps to 2.6 × 10 12 eV -1 cm -2 (compared to that of HfO 2 /InP, that is, 5.4 × 10 12 eV -1 cm -2 ). The suppression of gap states caused by the outdiffusion of In atoms significantly controls the degradation of capacitors caused by leakage current through the stacked oxide layers.

  3. Effect of reactant concentration on the structural properties of hydrothermally-grown ZnO rods on seed-layer ZnO / polyethylene terephthalate substrates

    Energy Technology Data Exchange (ETDEWEB)

    Jeong, Y. I.; Shin, C. M.; Heo, J. H.; Ryu, H. [Inje University, Gimhae (Korea, Republic of); Lee, W. J. [Dong-Eui University, Busan (Korea, Republic of); Son, C. S. [Silla University, Busan (Korea, Republic of); Choi, H. [Pukyong National University, Busan (Korea, Republic of)

    2011-09-15

    The morphology and the structural properties were studied for zinc-oxide (ZnO) rods hydrothermally grown on seed-layer ZnO/polyethylene terephthalate (PET) substrates at various reactant concentrations. Dissolved solutions with de-ionized water, zinc nitrate hexahydrate (Zn(NO{sub 3}){sub 2}{center_dot}6H{sub 2}O, ZNH) and hexamethylenetetramine (C{sub 6}H{sub 12}N{sub 4}, HMT) were employed as reactants for hydrothermal growth of ZnO. The transparency of the mixtures (ZNH+HMT) with increasing reactant concentration from 0.025 to 0.25 M changed from transparent to translucent to opaque (white colors) due to Zn(OH){sub 2} precipitates. When the concentration was increased, the density of the ZnO rods increased, and the morphology of the ZnO rods changed from a hexagonal flat-end shape to a sharp-end or flake-like structure. The sharp-end rods with increasing concentration from 0.1 to 0.15 M resulted from the etching process at a lower pH condition (less than pH 6) after the ZnO rod growth, and the flake-like structure was due to a high growth rate. The ZnO seed layer might have improved the alignment of ZnO rods and made a high density of ZnO rods. In addition, the structural properties were improved at lower concentrations by inserting a seed layer.

  4. Structure and thermal expansion of Ca9Gd(VO4)7: A combined powder-diffraction and dilatometric study of a Czochralski-grown crystal

    Science.gov (United States)

    Paszkowicz, Wojciech; Shekhovtsov, Alexei; Kosmyna, Miron; Loiko, Pavel; Vilejshikova, Elena; Minikayev, Roman; Romanowski, Przemysław; Wierzchowski, Wojciech; Wieteska, Krzysztof; Paulmann, Carsten; Bryleva, Ekaterina; Belikov, Konstantin; Fitch, Andrew

    2017-11-01

    Materials of the Ca9RE(VO4)7 (CRVO) formula (RE = rare earth) and whitlockite-related structures are considered for applications in optoelectronics, e.g., in white-light emitting diodes and lasers. In the CRVO structure, the RE atoms are known to share the site occupation with Ca atoms at two or three among four Ca sites, with partial occupancy values depending on the choice of the RE atom. In this work, the structure and quality of a Czochralski-grown crystal of this family, Ca9Gd(VO4)7 (CGVO), are studied using X-ray diffraction methods. The room-temperature structure is refined using the powder diffraction data collected at a high-resolution synchrotron beamline ID22 (ESRF, Grenoble); for comparison purposes, a laboratory diffraction pattern was collected and analyzed, as well. The site occupancies are discussed on the basis of comparison with literature data of isostructural synthetic crystals of the CRVO series. The results confirm the previously reported site-occupation scheme and indicate a tendency of the CGVO compound to adopt a Gd-deficient composition. Moreover, the thermal expansion coefficient is determined for CGVO as a function of temperature in the 302-1023 K range using laboratory diffraction data. Additionally, for CGVO and six other single crystals of the same family, thermal expansion is studied in the 298-473 K range, using the dilatometric data. The magnitude and anisotropy of thermal expansion, being of importance for laser applications, are discussed for these materials.

  5. LED system reliability

    NARCIS (Netherlands)

    Driel, W.D. van; Yuan, C.A.; Koh, S.; Zhang, G.Q.

    2011-01-01

    This paper presents our effort to predict the system reliability of Solid State Lighting (SSL) applications. A SSL system is composed of a LED engine with micro-electronic driver(s) that supplies power to the optic design. Knowledge of system level reliability is not only a challenging scientific

  6. Study of structural, morphological, optical and electroluminescent properties of undoped ZnO nanorods grown by a simple chemical precipitation

    Directory of Open Access Journals (Sweden)

    Singh A.

    2015-12-01

    Full Text Available In this work, zinc oxide (ZnO nanorods were obtained by a simple chemical precipitation method in the presence of capping agent: polyvinyl pyrrolidone (PVP at room temperature. X-ray diffraction (XRD result indicates that the synthesized undoped ZnO nanorods have hexagonal wurtzite structure without any impurities. It has been observed that the growth direction of the prepared ZnO nanorods is [1 0 1]. XRD analysis revealed that the nanorods have the crystallite size of 49 nm. Crystallite size is calculated by Debye-Scherrer formula and lattice strain is calculated by Williomson-Hall equation. Cell volume, Lorentz factor, Lorentz polarization factor, bond length, texture coefficient, lattice constants and dislocation density have also been studied. We also compared the interplanar spacings and relative peak intensities with their standard values at different angles. The scanning electron microscope (SEM images confirmed the size and shape of these nanorods. It has been found that the diameter of the nanorods ranges from 1.52 μm to 1.61 μm and the length is about 4.89 μm. It has also been observed that at room temperature ultraviolet visible (UV-Vis absorption band is around 355 nm (blue shifted as compared to the bulk. The average particle size has also been calculated by mathematical model of effective mass approximation equation, using UV-Vis absorption peak. Finally, the bandgap has been calculated using UV-absorption peak. Electroluminescence (EL studies show that emission of light is possible at very small threshold voltage and it increases rapidly with increasing applied voltage. It is seen that smaller ZnO nanoparticles give higher electroluminescence brightness starting at lower threshold voltage. The brightness is also affected by increasing the frequency of AC signal.

  7. High-power LEDs for plant cultivation

    Science.gov (United States)

    Tamulaitis, Gintautas; Duchovskis, Pavelas; Bliznikas, Zenius; Breive, Kestutis; Ulinskaite, Raimonda; Brazaityte, Ausra; Novickovas, Algirdas; Zukauskas, Arturas; Shur, Michael S.

    2004-10-01

    We report on high-power solid-state lighting facility for cultivation of greenhouse vegetables and on the results of the study of control of photosynthetic activity and growth morphology of radish and lettuce imposed by variation of the spectral composition of illumination. Experimental lighting modules (useful area of 0.22 m2) were designed based on 4 types of high-power light-emitting diodes (LEDs) with emission peaked in red at the wavelengths of 660 nm and 640 nm (predominantly absorbed by chlorophyll a and b for photosynthesis, respectively), in blue at 455 nm (phototropic function), and in far-red at 735 nm (important for photomorphology). Morphological characteristics, chlorophyll and phytohormone concentrations in radish and lettuce grown in phytotron chambers under lighting with different spectral composition of the LED-based illuminator and under illumination by high pressure sodium lamps with an equivalent photosynthetic photon flux density were compared. A well-balanced solid-state lighting was found to enhance production of green mass and to ensure healthy morphogenesis of plants compared to those grown using conventional lighting. We observed that the plant morphology and concentrations of morphologically active phytohormones is strongly affected by the spectral composition of light in the red region. Commercial application of the LED-based illumination for large-scale plant cultivation is discussed. This technology is favorable from the point of view of energy consumption, controllable growth, and food safety but is hindered by high cost of the LEDs. Large scale manufacturing of high-power red AlInGaP-based LEDs emitting at 650 nm and a further decrease of the photon price for the LEDs emitting in the vicinity of the absorption peak of chlorophylls have to be achieved to promote horticulture applications.

  8. Structural characterization of AgGaTe{sub 2} layers grown on a- and c-sapphire substrates by a closed space sublimation method

    Energy Technology Data Exchange (ETDEWEB)

    Uruno, Aya; Usui, Ayaka [Department of Electrical Engineering and Bioscience, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555 (Japan); Kobayashi, Masakazu [Department of Electrical Engineering and Bioscience, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555 (Japan); Kagami Memorial Research Institute for Materials Science and Technology, Waseda University, 2-8-26 Nishiwaseda, Shinjuku, Tokyo 169-0051 (Japan)

    2014-07-15

    AgGaTe{sub 2} layers were grown on a- and c-plane sapphire substrates by a closed space sublimation method with varying the source temperature. Grown films were evaluated by θ -2θ and pole figure measurements of X-ray diffraction. AgGaTe{sub 2} layers were grown to have strong preference for the (103) orientation. However, it was cleared the Ag{sub 5}Te{sub 3} was formed along with the AgGaTe{sub 2} when the layer was grown on c-plane sapphire. The orientation of the film was analyzed by using the pole figure, and resulted in AgGaTe{sub 2} without Ag{sub 5}Te{sub 3} layers could be grown on a-plane sapphire. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Material and device studies for the development of ultra-violet light emitting diodes (UV-LEDS) along polar, non-polar and semi-polar directions

    Science.gov (United States)

    Chandrasekaran, Ramya

    Over the past few years, significant effort was dedicated to the development of ultraviolet light emitting diodes (UV-LEDs) for a variety of applications. Such applications include chemical and biological detection, water purification and solid-state lighting. III-Nitride LEDs based on multiple quantum wells (MQWs) grown along the conventional [0001] (polar) direction suffer from the quantum confined Stark effect (QCSE), due to the existence of strong electric fields that arise from spontaneous and piezoelectric polarization. Thus, there is strong motivation to develop MQW-based III-nitride LED structures grown along non-polar and semi-polar directions. The goal of this dissertation is to develop UV-LEDs along the [0001] polar and [11 2¯ 0] non-polar directions by the method of Molecular Beam Epitaxy (MBE). The polar and non-polar LEDs were grown on the C-plane and R-plane sapphire substrates respectively. This work is a combination of materials science studies related to the nucleation, growth and n- and p-type doping of III-nitride films on these two substrates, as well as device studies related to fabrication and characterization of UV-LEDs. It was observed that the crystallographic orientation of the III-nitride films grown on R-plane sapphire depends strongly on the kinetic conditions of growth of the Aluminum Nitride (AIN) buffer. Specifically, growth of the AIN buffer under group III-rich conditions leads to nitride films having the (11 2¯ 0) non polar planes parallel to the sapphire surface, while growth of the buffer under nitrogen rich conditions leads to nitride films with the (11 2¯ 6) semi-polar planes parallel to the sapphire surface. The electron concentration and mobility for the films grown along the polar, non-polar and semi-polar directions were investigated. P-type doping of Gallium Nitride (GaN) films grown on the nonpolar (11 2¯ 0) plane do not suffer from polarity inversion and thus the material was doped p-type with a hole concentration

  10. Using AlN-Coated Heat Sink to Improve the Heat Dissipation of LED Packages

    Directory of Open Access Journals (Sweden)

    Jean Ming-Der

    2016-01-01

    Full Text Available This study optimizes aluminum nitride (AlN ceramics, in order to enhance the thermal performance of light-emitting diode (LED packages. AlN coatings are grown on copper/ aluminum substrates as a heat interface material, using an electrostatic spraying process. The effect of the deposition parameters on the coatings is determined. The thermal performance of AlN coated Cu/Al substrates is evaluated in terms of the heat dissipated and compared by measuring the LED case temperature. The structure and properties of the coating are also examined a scanning electron microscopy (SEM. In sum, the thermal performance of the LED is increased and good heat resistance characteristics are obtained. The results show that using AlN ceramic coating on a copper/aluminum substrate increases the thermal performance.

  11. High optical and structural quality of GaN epilayers grown on ( 2¯01) β-Ga2O3

    KAUST Repository

    Mumthaz Muhammed, Mufasila; Peres, M.; Yamashita, Y.; Morishima, Y.; Sato, S.; Franco, N.; Lorenz, K.; Kuramata, A.; Roqan, Iman S.

    2014-01-01

    Producing highly efficient GaN-based optoelectronic devices has been a challenge for a long time due to the large lattice mismatch between III-nitride materials and the most common substrates, which causes a high density of threading dislocations. Therefore, it is essential to obtain alternative substrates with small lattice mismatches, appropriate structural, thermal and electrical properties, and a competitive price. Our results show that (2̄01) oriented β-Ga2O3 has the potential to be used as a transparent and conductive substrate for GaN-growth. Photoluminescence spectra of thick GaN layers grown on (2̄01) oriented β-Ga 2O3 are found to be dominated by intense bandedge emission. Atomic force microscopy studies show a modest threading dislocation density of ∼108cm-2. X-ray diffraction studies show the high quality of the single-phase wurtzite GaN thin film on (2̄01) β-Ga2O3 with in-plane epitaxial orientation relationships between the β-Ga2O3 and the GaN thin film defined by (010) β-Ga2O3 || (112̄0) GaN and (2̄01) β-Ga2O3 || (0001) GaN leading to a lattice mismatch of ∼4.7%. Complementary Raman spectroscopy indicates that the quality of the GaN epilayer is high. © 2014 AIP Publishing LLC.

  12. Effects of Rapid Thermal Annealing on the Structural, Electrical, and Optical Properties of Zr-Doped ZnO Thin Films Grown by Atomic Layer Deposition

    Directory of Open Access Journals (Sweden)

    Jingjin Wu

    2016-08-01

    Full Text Available The 4 at. % zirconium-doped zinc oxide (ZnO:Zr films grown by atomic layer deposition (ALD were annealed at various temperatures ranging from 350 to 950 °C. The structural, electrical, and optical properties of rapid thermal annealing (RTA treated ZnO:Zr films have been evaluated to find out the stability limit. It was found that the grain size increased at 350 °C and decreased between 350 and 850 °C, while creeping up again at 850 °C. UV–vis characterization shows that the optical band gap shifts towards larger wavelengths. The Hall measurement shows that the resistivity almost keeps constant at low annealing temperatures, and increases rapidly after treatment at 750 °C due to the effect of both the carrier concentration and the Hall mobility. The best annealing temperature is found in the range of 350–550 °C. The ZnO:Zr film-coated glass substrates show good optical and electrical performance up to 550 °C during superstrate thin film solar cell deposition.

  13. XPS analysis and structural and morphological characterization of Cu{sub 2}ZnSnS{sub 4} thin films grown by sequential evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Gordillo, G. [Departamento de Física, Universidad Nacional de Colombia, Bogotá (Colombia); Calderón, C., E-mail: clcalderont@unal.edu.co [Departamento de Física, Universidad Nacional de Colombia, Bogotá (Colombia); Bartolo-Pérez, P. [Departamento de Física Aplicada, CINVESTAV-IPN, Mérida, Yuc. (Mexico)

    2014-06-01

    This work describes a procedure to grow single phase Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films with tetragonal-kesterite type structure, through sequential evaporation of the elemental metallic precursors under sulphur vapor supplied from an effusion cell. X-ray diffraction analysis (XRD) is mostly used for phase identification but cannot clearly distinguish the formation of secondary phases such as Cu{sub 2}SnS{sub 3} (CTS) because both compounds have the same diffraction pattern; therefore the use of a complementary technique is needed. Raman scattering analysis was used to distinguish these phases. The influence of the preparation conditions on the morphology and phases present in CZTS thin films were investigated through measurements of scanning electron microscopy (SEM) and XRD, respectively. From transmittance measurements, the energy band gap of the CZTS films was estimated to be around 1.45 eV. The limitation of XRD to identify some of the remaining phases after the growth process are investigated and the results of Raman analysis on the phases formed in samples grown by this method are presented. Further, the influence of the preparation conditions on the homogeneity of the chemical composition in the volume was studied by X-ray photoelectron spectroscopy (XPS) analysis.

  14. High optical and structural quality of GaN epilayers grown on ( 2¯01) β-Ga2O3

    KAUST Repository

    Mumthaz Muhammed, Mufasila

    2014-07-28

    Producing highly efficient GaN-based optoelectronic devices has been a challenge for a long time due to the large lattice mismatch between III-nitride materials and the most common substrates, which causes a high density of threading dislocations. Therefore, it is essential to obtain alternative substrates with small lattice mismatches, appropriate structural, thermal and electrical properties, and a competitive price. Our results show that (2̄01) oriented β-Ga2O3 has the potential to be used as a transparent and conductive substrate for GaN-growth. Photoluminescence spectra of thick GaN layers grown on (2̄01) oriented β-Ga 2O3 are found to be dominated by intense bandedge emission. Atomic force microscopy studies show a modest threading dislocation density of ∼108cm-2. X-ray diffraction studies show the high quality of the single-phase wurtzite GaN thin film on (2̄01) β-Ga2O3 with in-plane epitaxial orientation relationships between the β-Ga2O3 and the GaN thin film defined by (010) β-Ga2O3 || (112̄0) GaN and (2̄01) β-Ga2O3 || (0001) GaN leading to a lattice mismatch of ∼4.7%. Complementary Raman spectroscopy indicates that the quality of the GaN epilayer is high. © 2014 AIP Publishing LLC.

  15. Structural, electrical, and optical properties of polycrystalline NbO_2 thin films grown on glass substrates by solid phase crystallization

    International Nuclear Information System (INIS)

    Nakao, Shoichiro; Kamisaka, Hideyuki; Hirose, Yasushi; Hasegawa, Tetsuya

    2017-01-01

    We investigated the structural, electrical, and optical properties of polycrystalline NbO_2 thin films on glass substrates. The NbO_2 films were crystallized from amorphous precursor films grown by pulsed laser deposition at various oxygen partial pressures (P_O_2). The electrical and optical properties of the precursor films systematically changed with P_O_2, demonstrating that the oxygen content of the precursor films can be finely controlled with P_O_2. The precursors were crystallized into polycrystalline NbO_2 films by annealing under vacuum at 600 C. The NbO_2 films possessed extremely flat surfaces with branching patterns. Even optimized films showed a low resistivity (ρ) of 2 x 10"2 Ω cm, which is much lower than the bulk value of 1 x 10"4 Ω cm, probably because of the inferior crystallinity of the films compared with that of a bulk NbO_2 crystal. Both oxygen-rich and -poor NbO_2 films showed lower ρ than that of the stoichiometric film. The NbO_2 film with the highest ρ showed an indirect bandgap of 0.7 eV. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  16. Structural, electrical, and optical properties of polycrystalline NbO{sub 2} thin films grown on glass substrates by solid phase crystallization

    Energy Technology Data Exchange (ETDEWEB)

    Nakao, Shoichiro [Kanagawa Academy of Science and Technology (KAST), Kawasaki (Japan); Kamisaka, Hideyuki [Department of Chemistry, The University of Tokyo (Japan); Hirose, Yasushi; Hasegawa, Tetsuya [Kanagawa Academy of Science and Technology (KAST), Kawasaki (Japan); Department of Chemistry, The University of Tokyo (Japan)

    2017-03-15

    We investigated the structural, electrical, and optical properties of polycrystalline NbO{sub 2} thin films on glass substrates. The NbO{sub 2} films were crystallized from amorphous precursor films grown by pulsed laser deposition at various oxygen partial pressures (P{sub O2}). The electrical and optical properties of the precursor films systematically changed with P{sub O2}, demonstrating that the oxygen content of the precursor films can be finely controlled with P{sub O2}. The precursors were crystallized into polycrystalline NbO{sub 2} films by annealing under vacuum at 600 C. The NbO{sub 2} films possessed extremely flat surfaces with branching patterns. Even optimized films showed a low resistivity (ρ) of 2 x 10{sup 2} Ω cm, which is much lower than the bulk value of 1 x 10{sup 4} Ω cm, probably because of the inferior crystallinity of the films compared with that of a bulk NbO{sub 2} crystal. Both oxygen-rich and -poor NbO{sub 2} films showed lower ρ than that of the stoichiometric film. The NbO{sub 2} film with the highest ρ showed an indirect bandgap of 0.7 eV. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  17. Structural and electrical properties of Ge-on-Si(0 0 1) layers with ultra heavy n-type doping grown by MBE

    Science.gov (United States)

    Yurasov, D. V.; Antonov, A. V.; Drozdov, M. N.; Yunin, P. A.; Andreev, B. A.; Bushuykin, P. A.; Baydakova, N. A.; Novikov, A. V.

    2018-06-01

    In this paper we report about the formation of ultra heavy doped n-Ge layers on Si(0 0 1) substrates by molecular beam epitaxy and their characterization by different independent techniques. Combined study of structural and electrical properties of fabricated layers using secondary ion mass spectroscopy, X-ray diffraction, Hall effect and reflection measurements was carried out and it has revealed the achievable charge carrier densities exceeding 1020 cm-3 without deterioration of crystalline quality of such doped layers. It was also shown that X-ray analysis can be used as a fast, reliable and non-destructive method for evaluation of the electrically active Sb concentration in heavy doped Ge layers. The appropriate set of doping density allowed to adjust the plasmonic resonance position in Ge:Sb layers in a rather wide range reaching the wavelength of 3.6 μm for the highest doping concentration. Room temperature photoluminescence confirmed the high crystalline quality of such doped layers. Our results indicated the attainability of high electron concentration in Ge:Sb layers grown on Si substrates without crystalline quality deterioration which may find potential applications in the fields of Si-based photonics and mid-IR plasmonics.

  18. Structural and optical studies of GaN pn-junction with AlN buffer layer grown on Si (111) by RF plasma enhanced MBE

    Energy Technology Data Exchange (ETDEWEB)

    Yusoff, Mohd Zaki Mohd; Hassan, Zainuriah; Woei, Chin Che; Hassan, Haslan Abu; Abdullah, Mat Johar [Nano-Optoelectronics Research and Technology Laboratory School of Physics, Universiti Sains Malaysia, 11800 Penang, Malaysia and Department of Applied Sciences Universiti Teknologi MARA (UiTM) 13500 Permatang Pauh, Penang (Malaysia); Department of Applied Sciences Universiti Teknologi MARA (UiTM) 13500 Permatang Pauh, Penang (Malaysia)

    2012-06-29

    GaN pn-junction grown on silicon substrates have been the focus in a number of recent reports and further effort is still necessary to improve its crystalline quality for practical applications. GaN has the high n-type background carrier concentration resulting from native defects commonly thought to be nitrogen vacancies. In this work, we present the growth of pn-junction of GaN on Si (111) substrate using RF plasma-enhanced molecular beam epitaxy (MBE). Both of the layers show uniformity with an average thickness of 0.709 {mu}m and 0.095 {mu}m for GaN and AlN layers, respectively. The XRD spectra indicate that no sign of cubic phase of GaN are found, so it is confirmed that the sample possessed hexagonal structure. It was found that all the allowed Raman optical phonon modes of GaN, i.e. the E2 (low), E1 (high) and A1 (LO) are clearly visible.

  19. Influence of different aspect ratios on the structural and electrical properties of GaN thin films grown on nanoscale-patterned sapphire substrates

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Fang-Wei [Department of Electrophysics, National Chiao-Tung University, Hsinchu 300, Taiwan (China); Ke, Wen-Cheng, E-mail: wcke@mail.ntust.edu.tw [Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Cheng, Chun-Hong; Liao, Bo-Wei; Chen, Wei-Kuo [Department of Electrophysics, National Chiao-Tung University, Hsinchu 300, Taiwan (China)

    2016-07-01

    Highlights: • Nanoscale patterned sapphire substrate was prepared by anodic-aluminum-oxide etching mask. • Influence of aspect ratio of NPSS on structural and electrical properties of GaN films was studied. • Low dislocation density and high carrier mobility of GaN films were grown on high aspect ratio NPSS. - Abstract: This study presents GaN thin films grown on nanoscale-patterned sapphire substrates (NPSSs) with different aspect ratios (ARs) using a homemade metal-organic chemical vapor deposition system. The anodic aluminum oxide (AAO) technique is used to prepare the dry etching mask. The cross-sectional view of the scanning electron microscope image shows that voids exist between the interface of the GaN thin film and the high-AR (i.e. ∼2) NPSS. In contrast, patterns on the low-AR (∼0.7) NPSS are filled full of GaN. The formation of voids on the high-AR NPSS is believed to be due to the enhancement of the lateral growth in the initial growth stage, and the quick-merging GaN thin film blocks the precursors from continuing to supply the bottom of the pattern. The atomic force microscopy images of GaN on bare sapphire show a layer-by-layer surface morphology, which becomes a step-flow surface morphology for GaN on a high-AR NPSS. The edge-type threading dislocation density can be reduced from 7.1 × 10{sup 8} cm{sup −2} for GaN on bare sapphire to 4.9 × 10{sup 8} cm{sup −2} for GaN on a high-AR NPSS. In addition, the carrier mobility increases from 85 cm{sup 2}/Vs for GaN on bare sapphire to 199 cm{sup 2}/Vs for GaN on a high-AR NPSS. However, the increased screw-type threading dislocation density for GaN on a low-AR NPSS is due to the competition of lateral growth on the flat-top patterns and vertical growth on the bottom of the patterns that causes the material quality of the GaN thin film to degenerate. Thus, the experimental results indicate that the AR of the particular patterning of a NPSS plays a crucial role in achieving GaN thin film with

  20. Thermal management for LED applications

    CERN Document Server

    Poppe, András

    2014-01-01

    Thermal Management for LED Applications provides state-of-the-art information on recent developments in thermal management as it relates to LEDs and LED-based systems and their applications. Coverage begins with an overview of the basics of thermal management including thermal design for LEDs, thermal characterization and testing of LEDs, and issues related to failure mechanisms and reliability and performance in harsh environments. Advances and recent developments in thermal management round out the book with discussions on advances in TIMs (thermal interface materials) for LED applications, advances in forced convection cooling of LEDs, and advances in heat sinks for LED assemblies. This book also: Presents a comprehensive overview of the basics of thermal management as it relates to LEDs and LED-based systems Discusses both design and thermal management considerations when manufacturing LEDs and LED-based systems Covers reliability and performance of LEDs in harsh environments Has a hands-on applications a...

  1. Prospects of III-nitride optoelectronics grown on Si

    International Nuclear Information System (INIS)

    Zhu, D; Wallis, D J; Humphreys, C J

    2013-01-01

    The use of III-nitride-based light-emitting diodes (LEDs) is now widespread in applications such as indicator lamps, display panels, backlighting for liquid-crystal display TVs and computer screens, traffic lights, etc. To meet the huge market demand and lower the manufacturing cost, the LED industry is moving fast from 2 inch to 4 inch and recently to 6 inch wafer sizes. Although Al 2 O 3 (sapphire) and SiC remain the dominant substrate materials for the epitaxy of nitride LEDs, the use of large Si substrates attracts great interest because Si wafers are readily available in large diameters at low cost. In addition, such wafers are compatible with existing processing lines for 6 inch and larger wafers commonly used in the electronics industry. During the last decade, much exciting progress has been achieved in improving the performance of GaN-on-Si devices. In this contribution, the status and prospects of III-nitride optoelectronics grown on Si substrates are reviewed. The issues involved in the growth of GaN-based LED structures on Si and possible solutions are outlined, together with a brief introduction to some novel in situ and ex situ monitoring/characterization tools, which are especially useful for the growth of GaN-on-Si structures. (review article)

  2. Design of a lighting system with high-power LEDs, large area electronics, and light management structure in the LUMENTILE European project

    Science.gov (United States)

    Carraro, L.; Simonetta, M.; Benetti, G.; Tramonte, A.; Capelli, G.; Benedetti, M.; Randone, E. M.; Ylisaukko-oja, A.; Keränen, K.; Facchinetti, T.; Giuliani, G.

    2017-02-01

    LUMENTILE (LUMinous ElectroNic TILE) is a project funded by the European Commission with the goal of developing a luminous tile with novel functionalities, capable of changing its color and interact with the user. Applications include interior/exterior tile for walls and floors covering, high-efficiency luminaries, and advertising under the form of giant video screens. High overall electrical efficiency of the tile is mandatory, as several millions of square meters are foreseen to be installed each year. Demand is for high uniformity of the illumination of the top tile surface, and for high optical extraction efficiency. These features are achieved by smart light management, using a new approach based on light guiding slab and spatially selective light extraction obtained using both diffusion and/or reflection from the top and bottom interfaces of the optical layer. Planar and edge configurations for the RGB LEDs are considered and compared. A square shape with side length from 20cm to 60cm is considered for the tiles. The electronic circuit layout must optimize the electrical efficiency, and be compatible with low-cost roll-to-roll production on flexible substrates. LED heat management is tackled by using dedicated solutions that allow operation in thermally harsh environment. An approach based on OLEDs has also been considered, still needing improvement on emitted power and ruggedness.

  3. Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH3 molecular beam epitaxy

    KAUST Repository

    Browne, David A.

    2015-05-14

    © 2015 AIP Publishing LLC. Unipolar-light emitting diode like structures were grown by NH3 molecular beam epitaxy on c plane (0001) GaN on sapphire templates. Studies were performed to experimentally examine the effect of random alloy fluctuations on electron transport through quantum well active regions. These unipolar structures served as a test vehicle to test our 2D model of the effect of compositional fluctuations on polarization-induced barriers. Variables that were systematically studied included varying quantum well number from 0 to 5, well thickness of 1.5 nm, 3 nm, and 4.5 nm, and well compositions of In0.14Ga0.86N and In0.19Ga0.81N. Diode-like current voltage behavior was clearly observed due to the polarization-induced conduction band barrier in the quantum well region. Increasing quantum well width and number were shown to have a significant impact on increasing the turn-on voltage of each device. Temperature dependent IV measurements clearly revealed the dominant effect of thermionic behavior for temperatures from room temperature and above. Atom probe tomography was used to directly analyze parameters of the alloy fluctuations in the quantum wells including amplitude and length scale of compositional variation. A drift diffusion Schrödinger Poisson method accounting for two dimensional indium fluctuations (both in the growth direction and within the wells) was used to correctly model the turn-on voltages of the devices as compared to traditional 1D simulation models.

  4. The compositional, structural, and magnetic properties of a Fe{sub 3}O{sub 4}/Ga{sub 2}O{sub 3}/GaN spin injecting hetero-structure grown by metal-organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Zhonghua; Huang, Shimin [Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023 (China); Tang, Kun, E-mail: ktang@nju.edu.cn [Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023 (China); Gu, Shulin, E-mail: slgu@nju.edu.cn [Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023 (China); Zhu, Shunming [Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023 (China); Ye, Jiandong [Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023 (China); Nanjing University Institute of Optoelectronics at Yangzhou, Yangzhou 225009 (China); Xu, Mingxiang [Department of Physics, Southeast University, Nanjing 210096 (China); Wang, Wei; Zheng, Youdou [Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023 (China)

    2016-12-01

    Highlights: • The Fe{sub 3}O{sub 4}/Ga{sub 2}O{sub 3}/GaN hetero-structure has been fabricated by MOCVD successfully. • The formation mechanism of different layers in sample was revealed in details. • The properties of the hetero-structure have been presented and discussed extensively. • The effect of Ga diffusion on the magnetic properties of Fe{sub 3}O{sub 4} film has been shown. - Abstract: In this article, the authors have designed and fabricated a Fe{sub 3}O{sub 4}/Ga{sub 2}O{sub 3}/GaN spin injecting hetero-structure by metal-organic chemical vapor deposition. The compositional, structural, and magnetic properties of the hetero-structure have been characterized and discussed. From the characterizations, the hetero-structure has been successfully grown generally. However, due to the unintentional diffusion of Ga ions from Ga{sub 2}O{sub 3}/GaN layers, the most part of the nominal Fe{sub 3}O{sub 4} layer is actually in the form of Ga{sub x}Fe{sub 3−x}O{sub 4} with gradually decreased x values from the Fe{sub 3}O{sub 4}/Ga{sub 2}O{sub 3} interface to the Fe{sub 3}O{sub 4} surface. Post-annealing process can further aggravate the diffusion. Due to the similar ionic radius of Ga and Fe, the structural configuration of the Ga{sub x}Fe{sub 3−x}O{sub 4} does not differ from that of pure Fe{sub 3}O{sub 4}. However, the ferromagnetism has been reduced with the incorporation of Ga into Fe{sub 3}O{sub 4}, which has been explained by the increased Yafet-Kittel angles in presence of considerable amount of Ga incorporation. A different behavior of the magnetoresistance has been found on the as-grown and annealed samples, which could be modelled and explained by the competition between the spin-dependent and spin-independent conduction channels. This work has provided detailed information on the interfacial properties of the Fe{sub 3}O{sub 4}/Ga{sub 2}O{sub 3}/GaN spin injecting hetero-structure, which is the solid basis for further improvement and application of

  5. White LED visible light communication technology research

    Science.gov (United States)

    Yang, Chao

    2017-03-01

    Visible light communication is a new type of wireless optical communication technology. White LED to the success of development, the LED lighting technology is facing a new revolution. Because the LED has high sensitivity, modulation, the advantages of good performance, large transmission power, can make it in light transmission light signal at the same time. Use white LED light-emitting characteristics, on the modulation signals to the visible light transmission, can constitute a LED visible light communication system. We built a small visible optical communication system. The system composition and structure has certain value in the field of practical application, and we also research the key technology of transmitters and receivers, the key problem has been resolved. By studying on the optical and LED the characteristics of a high speed modulation driving circuit and a high sensitive receiving circuit was designed. And information transmission through the single chip microcomputer test, a preliminary verification has realized the data transmission function.

  6. Grown on Novel Microcarriers

    Directory of Open Access Journals (Sweden)

    Torsten Falk

    2012-01-01

    Full Text Available Human retinal pigment epithelial (hRPE cells have been tested as a cell-based therapy for Parkinson’s disease but will require additional study before further clinical trials can be planned. We now show that the long-term survival and neurotrophic potential of hRPE cells can be enhanced by the use of FDA-approved plastic-based microcarriers compared to a gelatin-based microcarrier as used in failed clinical trials. The hRPE cells grown on these plastic-based microcarriers display several important characteristics of hRPE found in vivo: (1 characteristic morphological features, (2 accumulation of melanin pigment, and (3 high levels of production of the neurotrophic factors pigment epithelium-derived factor (PEDF and vascular endothelial growth factor-A (VEGF-A. Growth of hRPE cells on plastic-based microcarriers led to sustained levels (>1 ng/ml of PEDF and VEGF-A in conditioned media for two months. We also show that the expression of VEGF-A and PEDF is reciprocally regulated by activation of the GPR143 pathway. GPR143 is activated by L-DOPA (1 μM which decreased VEGF-A secretion as opposed to the previously reported increase in PEDF secretion. The hRPE microcarriers are therefore novel candidate delivery systems for achieving long-term delivery of the neuroprotective factors PEDF and VEGF-A, which could have a value in neurodegenerative conditions such as Parkinson’s disease.

  7. Composition dependences of crystal structure and electrical properties of epitaxial Pb(Zr,Ti)O3 films grown on Si and SrTiO3 substrates

    Science.gov (United States)

    Okamoto, Shoji; Okamoto, Satoshi; Yokoyama, Shintaro; Akiyama, Kensuke; Funakubo, Hiroshi

    2016-10-01

    {100}-oriented Pb(Zr x ,Ti1- x )O3 (PZT) thin films of approximately 2 µm thickness and Zr/(Zr + Ti) ratios of 0.39-0.65 were epitaxially grown on (100)cSrRuO3//(100)SrTiO3 (STO) and (100)cSrRuO3//(100)cLaNiO3//(100)CeO2//(100)YSZ//(100)Si (Si) substrates having different thermal expansion coefficients by pulsed metal-organic chemical vapor deposition (MOCVD). The effects of Zr/(Zr + Ti) ratio and type of substrate on the crystal structure and dielectric, ferroelectric and piezoelectric properties of the films were systematically investigated. The X-ray diffraction measurement showed that both films changed from having a tetragonal symmetry to rhombohedral symmetry through the coexisting region with increasing Zr/(Zr + Ti) ratio. This region showed the Zr/(Zr + Ti) ratios of 0.45-0.59 for the films on the STO substrates that were wider than the films on the Si substrates. Saturation polarization values were minimum at approximately Zr/(Zr + Ti) = 0.50 for the films on the STO substrates, and no obvious Zr/(Zr + Ti) ratio dependence was detected in the films on the Si substrates. On the other hand, the maximum field-induced strain values measured by scanning force microscopy at approximately Zr/(Zr + Ti) = 0.50 at 100 kV/cm were about 0.5 and 0.1% in the films on the Si and STO, respectively.

  8. Structure and electronic properties of Zn-tetra-phenyl-porphyrin single- and multi-layers films grown on Fe(001)-p(1 × 1)O

    Energy Technology Data Exchange (ETDEWEB)

    Bussetti, Gianlorenzo, E-mail: gianlorenzo.bussetti@polimi.it; Calloni, Alberto; Celeri, Matteo; Yivlialin, Rossella; Finazzi, Marco; Bottegoni, Federico; Duò, Lamberto; Ciccacci, Franco

    2016-12-30

    Highlights: • ZnTPP/Fe(001)-p(1 × 1)O is a prototypical system to investigate the porphyrin/thin metal oxide film interaction. • Oxygen layer plays a crucial role in decreasing the porphyrin-substrate interaction. • An ordered ZnTPP (5 × 5) reconstruction is found on the nominal 1 ML-thick film. • On Fe(001)-p(1 × 1)O the electronic properties of the ZnTPP film are preserved with respect to other substrates. - Abstract: The structure and the electronic properties of thin (1 molecular layer) and thick (20 molecular layers) Zn-tetra-phenyl-porphyrin (ZnTPP) films grown on a single metal oxide (MO) layer, namely Fe(001)-p(1 × 1)O, are shown and discussed. During the first stages of deposition, the ultra-thin MO layer reduces the molecule-substrate interaction enhancing the molecular diffusivity with the respect to other investigated substrates [namely, Si(111), Au(001) and oxygen-free Fe(001)]. On Fe(001)-p(1 × 1)O, ZnTPP molecules form an ordered and stable square-lattice array. The photoemission analysis of the valence bands reveals that all the characteristic features of the molecule are already visible in the 1 monolayer-thick sample spectrum. Similarly, the core level investigation suggests a weak molecule perturbation. The ZnTPP/Fe(001)-p(1 × 1)O interface represents a prototypical system to investigate the organic film adhesion on ultra-thin MO layers and the processes involved during the film growth.

  9. Efficient Planar Structured Perovskite Solar Cells with Enhanced Open-Circuit Voltage and Suppressed Charge Recombination Based on a Slow Grown Perovskite Layer from Lead Acetate Precursor.

    Science.gov (United States)

    Li, Cong; Guo, Qiang; Wang, Zhibin; Bai, Yiming; Liu, Lin; Wang, Fuzhi; Zhou, Erjun; Hayat, Tasawar; Alsaedi, Ahmed; Tan, Zhan'ao

    2017-12-06

    For planar structured organic-inorganic hybrid perovskite solar cells (PerSCs) with the poly(3,4-ethylenedioxythiophene:polystyrene sulfonate) (PEDOT:PSS) hole transport layer, the open-circuit voltage (V oc ) of the device is limited to be about 1.0 V, resulting in inferior performance in comparison with TiO 2 -based planar counterparts. Therefore, increasing V oc of the PEDOT:PSS-based planar device is an important way to enhance the efficiency of the PerSCs. Herein, we demonstrate a novel approach for perovskite film formation and the film is formed by slow growth from lead acetate precursor via a one-step spin-coating process without the thermal annealing (TA) process. Because the perovskite layer grows slowly and naturally, high-quality perovskite film can be achieved with larger crystalline particles, less defects, and smoother surface morphology. Ultraviolet absorption, X-ray diffraction, scanning electron microscopy, steady-state fluorescence spectroscopy (photoluminescence), and time-resolved fluorescence spectroscopy are used to clarify the crystallinity, morphology, and internal defects of perovskite thin films. The power conversion efficiency of p-i-n PerSCs based on slow-grown film (16.33%) shows greatly enhanced performance compared to that of the control device based on traditional thermally annealed perovskite film (14.33%). Furthermore, the V oc of the slow-growing device reaches 1.12 V, which is 0.1 V higher than that of the TA device. These findings indicate that slow growth of the perovskite layer from lead acetate precursor is a promising approach to achieve high-quality perovskite film for high-performance PerSCs.

  10. Development of highly durable deep-ultraviolet AlGaN-based LED multichip array with hemispherical encapsulated structures using a selected resin through a detailed feasibility study

    Science.gov (United States)

    Nagai, Shoko; Yamada, Kiho; Hirano, Akira; Ippommatsu, Masamichi; Ito, Masahiro; Morishima, Naoki; Aosaki, Ko; Honda, Yoshio; Amano, Hiroshi; Akasaki, Isamu

    2016-08-01

    To replace mercury lamps with AlGaN-based deep-ultraviolet (DUV) LEDs, a simple and low-cost package with increased light extraction efficiency (LEE) is indispensable. Therefore, resin encapsulation is considered to be a key technology. However, the photochemical reactions induced by DUV light cause serious problems, and conventional resins cannot be used. In the former part of this study, a comparison of a silicone resin and fluorine polymers was carried out in terms of their suitability for encapsulation, and we concluded that only one of the fluorine polymers can be used for encapsulation. In the latter part, the endurance of encapsulation using the selected fluorine polymer was investigated, and we confirmed that the selected fluorine polymer can guarantee a lifetime of over 6,000 h at a wavelength of 265 nm. Furthermore, a 3 × 4 array module of encapsulated dies on a simple AlN submount was fabricated, demonstrating the possibility of W/cm2-class lighting.

  11. Color homogeneity in LED spotlights

    NARCIS (Netherlands)

    Prins, C.R.

    2013-01-01

    Color variation in the light output of white LEDs is a common problem in LED lighting. We aim to design LED spotlights with a uniform color output while keeping the cost of the system low and the energy efficiency high. Therefore we design a special optic to eliminate the color variation of the LED.

  12. Studies on the growth aspects, structural, thermal, dielectric and third order nonlinear optical properties of solution grown 4-methylpyridinium p-nitrophenolate single crystal

    Science.gov (United States)

    Devi, S. Reena; Kalaiyarasi, S.; Zahid, I. MD.; Kumar, R. Mohan

    2016-11-01

    An ionic organic optical crystal of 4-methylpyridinium p-nitrophenolate was grown from methanol by slow evaporation method at ambient temperature. Powder and single crystal X-ray diffraction studies revealed the crystal system and its crystalline perfection. The rocking curve recorded from HRXRD study confirmed the crystal quality. FTIR spectral analysis confirmed the functional groups present in the title compound. UV-visible spectral study revealed the optical window and band gap of grown crystal. The thermal, electrical and surface laser damage threshold properties of harvested crystal were examined by using TGA/DTA, LCR/Impedance Analyzer and Nd:YAG laser system respectively. The third order nonlinear optical property of grown crystal was elucidated by Z-scan technique.

  13. Structural properties of In0.53Ga0.47As epitaxial films grown on Si (111) substrates by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Gao, Fangliang; Wen, Lei; Zhang, Xiaona; Guan, Yunfang; Li, Jingling; Zhang, Shuguang; Li, Guoqiang

    2015-01-01

    In 0.53 Ga 0.47 As epitaxial films are grown on 2-inch diameter Si (111) substrates by growing a low-temperature In 0.4 Ga 0.6 As buffer layer using molecular beam epitaxy. The effect of the buffer layer thickness on the as-grown In 0.53 Ga 0.47 As films is characterized by X-ray diffraction, scanning electron microscopy, atomic force microscopy and transmission electron microscopy (TEM). It is revealed that the crystalline quality and surface morphology of as-grown In 0.53 Ga 0.47 As epilayer are strongly affected by the thickness of the In 0.4 Ga 0.6 As buffer layer. From TEM investigation, we understand that the type and the distribution of dislocations of the buffer layer and the as-grown In 0.53 Ga 0.47 As film are different. We have demonstrated that the In 0.4 Ga 0.6 As buffer layer with a thickness of 12 nm can advantageously release the lattice mismatch stress between the In 0.53 Ga 0.47 As and Si substrate, ultimately leading to a high-quality In 0.53 Ga 0.47 As epitaxial film with low surface roughness. - Highlights: • We provide a simple approach to achieve high-quality In 0.53 Ga 0.47 As films on Si. • An appropriate thickness of In 0.4 Ga 0.6 As buffer layer can release mismatch strain. • High-quality In 0.53 Ga 0.47 As film is grown on Si using 12-nm-thick buffer layer. • Smooth surface In 0.53 Ga 0.47 As film is grown on Si using 12-nm-thick buffer layer

  14. Correlation Between Two-Dimensional Electron Gas Mobility and Crystal Quality in AlGaN/GaN High-Electron-Mobility Transistor Structure Grown on 4H-SiC.

    Science.gov (United States)

    Heo, Cheon; Jang, Jongjin; Lee, Kyngjae; So, Byungchan; Lee, Kyungbae; Ko, Kwangse; Nam, Okhyun

    2017-01-01

    We investigated the correlation between the crystal quality and two-dimensional electron gas (2DEG) mobility of an AlGaN/GaN high-electron-mobility transistor (HEMT) structure grown by metal-organic chemical vapor deposition. For the structure with an AlN nucleation layer grown at 1100 °C, the 2DEG mobility and sheet carrier density were 1627 cm²/V·s and 3.23 × 10¹³ cm⁻², respectively, at room temperature. Further, it was confirmed that the edge dislocation density of the GaN buffer layer was related to the 2DEG mobility and sheet carrier density in the AlGaN/GaN HEMT.

  15. Tapering-induced enhancement of light extraction efficiency of nanowire deep ultraviolet LED by theoretical simulations

    KAUST Repository

    Lin, Ronghui; Galan, Sergio Valdes; Sun, Haiding; Hu, Yangrui; Alias, Mohd Sharizal; Janjua, Bilal; Ng, Tien Khee; Ooi, Boon S.; Li, Xiaohang

    2018-01-01

    A nanowire (NW) structure provides an alternative scheme for deep ultraviolet light emitting diodes (DUV-LEDs) that promises high material quality and better light extraction efficiency (LEE). In this report, we investigate the influence of the tapering angle of closely packed AlGaN NWs, which is found to exist naturally in molecular beam epitaxy (MBE) grown NW structures, on the LEE of NW DUV-LEDs. It is observed that, by having a small tapering angle, the vertical extraction is greatly enhanced for both transverse magnetic (TM) and transverse electric (TE) polarizations. Most notably, the vertical extraction of TM emission increased from 4.8% to 24.3%, which makes the LEE reasonably large to achieve high-performance DUV-LEDs. This is because the breaking of symmetry in the vertical direction changes the propagation of the light significantly to allow more coupling into radiation modes. Finally, we introduce errors to the NW positions to show the advantages of the tapered NW structures can be projected to random closely packed NW arrays. The results obtained in this paper can provide guidelines for designing efficient NW DUV-LEDs.

  16. Tapering-induced enhancement of light extraction efficiency of nanowire deep ultraviolet LED by theoretical simulations

    KAUST Repository

    Lin, Ronghui

    2018-04-21

    A nanowire (NW) structure provides an alternative scheme for deep ultraviolet light emitting diodes (DUV-LEDs) that promises high material quality and better light extraction efficiency (LEE). In this report, we investigate the influence of the tapering angle of closely packed AlGaN NWs, which is found to exist naturally in molecular beam epitaxy (MBE) grown NW structures, on the LEE of NW DUV-LEDs. It is observed that, by having a small tapering angle, the vertical extraction is greatly enhanced for both transverse magnetic (TM) and transverse electric (TE) polarizations. Most notably, the vertical extraction of TM emission increased from 4.8% to 24.3%, which makes the LEE reasonably large to achieve high-performance DUV-LEDs. This is because the breaking of symmetry in the vertical direction changes the propagation of the light significantly to allow more coupling into radiation modes. Finally, we introduce errors to the NW positions to show the advantages of the tapered NW structures can be projected to random closely packed NW arrays. The results obtained in this paper can provide guidelines for designing efficient NW DUV-LEDs.

  17. GaN-Ready Aluminum Nitride Substrates for Cost-Effective, Very Low Dislocation Density III-Nitride LEDs

    International Nuclear Information System (INIS)

    Schujman, Sandra; Schowalter, Leo

    2011-01-01

    The objective of this project was to develop and then demonstrate the efficacy of a cost effective approach for a low defect density substrate on which AlInGaN LEDs can be fabricated. The efficacy of this 'GaN-ready' substrate would then be tested by growing high efficiency, long lifetime InxGa1-xN blue LEDs. The approach used to meet the project objectives was to start with low dislocation density AlN single-crystal substrates and grow graded Al x Ga 1-x N layers on top. Pseudomorphic Al x Ga 1-x N epitaxial layers grown on bulk AlN substrates were used to fabricate light emitting diodes and demonstrate better device performance as a result of the low defect density in these layers when benched marked against state-of-the-art LEDs fabricated on sapphire substrates. The pseudomorphic LEDs showed excellent output powers compared to similar wavelength devices grown on sapphire substrates, with lifetimes exceeding 10,000 hours (which was the longest time that could reliably be estimated). In addition, high internal quantum efficiencies were demonstrated at high driving current densities even though the external quantum efficiencies were low due to poor photon extraction. Unfortunately, these pseudomorphic LEDs require high Al content so they emit in the ultraviolet. Sapphire based LEDs typically have threading dislocation densities (TDD) > 10 8 cm -2 while the pseudomorphic LEDs have TDD (le) 10 5 cm -2 . The resulting TDD, when grading the Al x Ga 1-x N layer all the way to pure GaN to produce a 'GaN-ready' substrate, has varied between the mid 10 8 down to the 10 6 cm -2 . These inconsistencies are not well understood. Finally, an approach to improve the LED structures on AlN substrates for light extraction efficiency was developed by thinning and roughening the substrate.

  18. Hydrothermally grown zeolite crystals

    International Nuclear Information System (INIS)

    Durrani, S.K.; Qureshi, A.H.; Hussain, M.A.; Qazi, N.K.

    2009-01-01

    The aluminium-deficient and ferrosilicate zeolite-type materials were synthesized by hydrothermal process at 150-170 degree C for various periods of time from the mixtures containing colloidal reactive silica, sodium aluminate, sodium hydroxide, iron nitrate and organic templates. Organic polycation templates were used as zeolite crystal shape modifiers to enhance relative growth rates. The template was almost completely removed from the zeolite specimens by calcination at 550 degree C for 8h in air. Simultaneous thermogravimetric (TG) and differential thermal analysis (DTA) was performed to study the removal of water molecules and the amount of organic template cations occluded inside the crystal pore of zeolite framework. The 12-13% weight loss in the range of (140-560 degree C) was associated with removal of the (C/sub 3/H/sub 7/)/sub 4/ N+ cation and water molecules. X-ray diffraction (XRD) analysis and scanning electron microscope (SEM) techniques were employed to study the structure, morphology and surface features of hydrothermally grown aluminium-deficient and ferrosilicate zeolite-type crystals. In order to elucidate the mode of zeolite crystallization the crystallinity and unit cell parameters of the materials were determined by XRD, which are the function of Al and Fe contents of zeolites. (author)

  19. LED Technology for Dental Applications

    DEFF Research Database (Denmark)

    Argyraki, Aikaterini; Ou, Yiyu; Soerensen, L. H.

    LEDs have a large potential in many dental and oral applications. Areas such as photo polymerization, fluorescence imaging, photodynamic therapy, and photoactivated disinfection are important future candidates for LED based diagnostics and treatment in dentistry.......LEDs have a large potential in many dental and oral applications. Areas such as photo polymerization, fluorescence imaging, photodynamic therapy, and photoactivated disinfection are important future candidates for LED based diagnostics and treatment in dentistry....

  20. InGaN/GaN Nanowire LEDs and Lasers

    KAUST Repository

    Zhao, Chao

    2016-01-01

    The large specific surface, and the associated high density of surface states was found to limit the light output power and quantum efficiency of nanowire-array devices, despite their potential for addressing the “green-gap” and efficiency-droop issues. The phonon and carrier confinement in nanowires also led to junction heating, and reduced heat dissipation. In this paper, we will present our studies on effective surface states passivation in InGaN/GaN quantum-disks (Qdisks)-in-nanowire light-emitting diodes (LEDs) and lasers grown on silicon (Si), as well as our recent work on nanowires LEDs grown on bulk-metal, a non-conventional substrate.

  1. Color homogeneity in LED spotlights

    NARCIS (Netherlands)

    Prins, C.R.; Tukker, T.W.; IJzerman, W.L.; Thije Boonkkamp, ten J.H.M.

    2014-01-01

    LED is a rising technology in the field of lighting. Halogen spotlights are nowadays replaced by LED spotlights because of their energy efficiency and long lifetime. However, color variation in the light output is a common problem. Poorly designed LED spotlights tend to have yellowish or bluish

  2. Deep UV LEDs

    Science.gov (United States)

    Han, Jung; Amano, Hiroshi; Schowalter, Leo

    2014-06-01

    Deep ultraviolet (DUV) photons interact strongly with a broad range of chemical and biological molecules; compact DUV light sources could enable a wide range of applications in chemi/bio-sensing, sterilization, agriculture, and industrial curing. The much shorter wavelength also results in useful characteristics related to optical diffraction (for lithography) and scattering (non-line-of-sight communication). The family of III-N (AlGaInN) compound semiconductors offers a tunable energy gap from infrared to DUV. While InGaN-based blue light emitters have been the primary focus for the obvious application of solid state lighting, there is a growing interest in the development of efficient UV and DUV light-emitting devices. In the past few years we have witnessed an increasing investment from both government and industry sectors to further the state of DUV light-emitting devices. The contributions in Semiconductor Science and Technology 's special issue on DUV devices provide an up-to-date snapshot covering many relevant topics in this field. Given the expected importance of bulk AlN substrate in DUV technology, we are pleased to include a review article by Hartmann et al on the growth of AlN bulk crystal by physical vapour transport. The issue of polarization field within the deep ultraviolet LEDs is examined in the article by Braut et al. Several commercial companies provide useful updates in their development of DUV emitters, including Nichia (Fujioka et al ), Nitride Semiconductors (Muramoto et al ) and Sensor Electronic Technology (Shatalov et al ). We believe these articles will provide an excellent overview of the state of technology. The growth of AlGaN heterostructures by molecular beam epitaxy, in contrast to the common organo-metallic vapour phase epitaxy, is discussed by Ivanov et al. Since hexagonal boron nitride (BN) has received much attention as both a UV and a two-dimensional electronic material, we believe it serves readers well to include the

  3. Oblique-angle sputtered AlN nanocolumnar layer as a buffer layer in GaN-based LED

    International Nuclear Information System (INIS)

    Chen, Lung-Chien; Tien, Ching-Ho; Liao, Wei-Chian; Luo, Yi-Min

    2011-01-01

    This work presents an aluminum nitride (AlN) nanocolumnar layer sputtered at various oblique angles and its application as a buffer layer for GaN-based light-emitting diodes (LEDs) that are fabricated on sapphire substrates. The OA-AlN nanocolumnar layer has a diameter of about 30-60 nm. The GaN-based LED structure is perpendicularly extended from the OA-AlN nanocolumnar layer. Then, the nanocolumnar structure is merged into p-GaN layer to form a mesa structure with a diameter of about 200-600 nm on the surface of the GaN-based LED. Moreover, optical characteristics of the LED were studied using photoluminescence, along with the blue-shifts observed as well. - Research highlights: → An AlN nanocolumnar buffer layer prepared by oblique-angle (OA) deposition. → GaN-based LED structures were grown on a sapphire substrate with an AlN nanocolumnar buffer layer. → The OA-AlN nanocolumnar layer has a diameter of about 30-60 nm.

  4. Structural and electrical properties of high-quality 0.41 μm-thick InSb films grown on GaAs (1 0 0) substrate with InxAl1−xSb continuously graded buffer

    International Nuclear Information System (INIS)

    Shin, Sang Hoon; Song, Jin Dong; Lim, Ju Young; Koo, Hyun Cheol; Kim, Tae Geun

    2012-01-01

    High-quality InSb was grown on a GaAs (1 0 0) substrate with an InAlSb continuously graded buffer (CGB). The temperatures of In, Al K-cells and substrate were modified during the growth of InAlSb CGB. The cross-section TEM image reveals that the defects due to lattice-mismatch disappear near lateral structures in CGB. The measured electron mobility of 0.41 μm-thick InSb was 46,300 cm 2 /Vs at 300 K. These data surpass the electron mobility of state-of-the-art InSb grown by other methods with similar thickness of InSb.

  5. Crystal structure of (110) oriented La0.7Sr0.3MnO3 grown on (001) silicon

    International Nuclear Information System (INIS)

    Sinha, Umesh Kumar; Sahoo, Antarjami; Padhan, Prahallad

    2016-01-01

    The mixed valance perovskite manganites have attracted a considerable attention due to their colossal magnetoresistance behavior. In particular, La 0.7 Sr 0.3 MnO 3 (LSMO) show half metallicity and possess Curie temperature (T C ) above room temperature, which makes this material an attractive candidate for spintronic device application. Thin films of LSMO were grown on (001) oriented Silicon (Si) using sputtering technique

  6. Structural, Optical, and Electrical Characterization of β-Ga2O3 Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy Suitable for UV Sensing

    Directory of Open Access Journals (Sweden)

    Abraham Arias

    2018-01-01

    Full Text Available β-Ga2O3 thin films were grown on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy. The films were grown using an elemental gallium source and oxygen supplied by an RF plasma source. Reflection high-energy electron diffraction (RHEED was used to monitor the surface quality in real time. Both in situ RHEED and ex situ X-ray diffraction confirmed the formation of single crystal β-phase films with excellent crystallinity on c-plane sapphire. Spectroscopic ellipsometry was used to determine the film thicknesses, giving values in the 11.6–18.8 nm range and the refractive index dispersion curves. UV-Vis transmittance measurements revealed that strong absorption of β-Ga2O3 starts at ∼270 nm. Top metal contacts were deposited by thermal evaporation for I-V characterization, which has been carried out in dark, as well as under visible and UV light illumination. The optical and electrical measurements showed that the grown thin films of β-Ga2O3 are excellent candidates for deep-ultraviolet detection and sensing.

  7. Structural characterization of zincblende Ga1-xMnxN epilayers grown by molecular beam epitaxy on (001) GaAs substrates

    International Nuclear Information System (INIS)

    Fay, M.W.; Han, Y.; Brown, P.D.; Novikov, S.V.; Edmonds, K.W.; Campion, R.P.; Gallagher, B.L.; Foxon, C.T.

    2005-01-01

    Zincblende p-type Ga 1-x Mn x N epilayers, grown with and without AlN/GaN buffer layers using plasma-assisted molecular beam epitaxy on (001) oriented GaAs substrates, have been investigated using a variety of complementary transmission electron microscopy techniques. The epilayers were found to contain a high anisotropic density of stacking faults and microtwins. MnAs inclusions were identified at the Ga 1-x Mn x N/(001)GaAs interface extending into the substrate. The use of AlN/GaN buffer layers was found to inhibit the formation of these inclusions

  8. Structural and superconducting properties of (Y,Gd)Ba2Cu3O7-δ grown by MOCVD on samarium zirconate buffered IBAD-MgO

    International Nuclear Information System (INIS)

    Stan, L; Holesinger, T G; Maiorov, B; Feldmann, D M; Usov, I O; DePaula, R F; Civale, L; Foltyn, S R; Jia, Q X; Chen, Y; Selvamanickam, V

    2008-01-01

    Textured samarium zirconate (SZO) films have been grown by reactive cosputtering directly on an ion beam assisted deposited (IBAD) MgO template, without an intermediate homoepitaxial MgO layer. The subsequent growth of 0.9 μm thick (Y,Gd)Ba 2 Cu 3 O 7-δ ((Y, Gd)BCO) films by metal organic chemical vapor deposition (MOCVD) yielded well textured films with a full width at half maximum of 1.9 0 and 3.4 0 for the out-of-plane and in-plane texture, respectively. Microstructural characterizations of the SZO buffered samples revealed clean interfaces. This indicates that the SZO not only provides a diffusion barrier, but also functions as a buffer for (Y, Gd)BCO grown by MOCVD. The achievement of self-field critical current densities (J c ) of over 2 MA cm -2 at 75.5 K is another proof of the effectiveness of SZO as a buffer on the IBAD-MgO template. The in-field measurements revealed an asymmetric angular dependence of J c and a shift of the ab-plane maxima due to the tilted nature of the template and (Y,Gd) 2 O 3 particles existing in the (Y, Gd)BCO matrix. The present results are especially important because they demonstrate that high temperature superconducting coated conductors with simpler architecture can be fabricated using commercially viable processes

  9. Structural features of epitaxial NiFe2O4 thin films grown on different substrates by direct liquid injection chemical vapor deposition

    Science.gov (United States)

    Datta, R.; Loukya, B.; Li, N.; Gupta, A.

    2012-04-01

    NiFe2O4 (NFO) thin films are grown on four different substrates, i.e., Lead Zinc Niobate-Lead Titanate (PZN-PT), Lead Magnesium Niobate-Lead Titanate (PMN-PT), MgAl2O4 (MAO) and SrTiO3 (STO), by a direct liquid injection chemical vapor deposition technique (DLI-CVD) under optimum growth conditions where relatively high growth rate (˜20 nm/min), smooth surface morphology and high saturation magnetization values in the range of 260-290 emu/ cm3 are obtained. The NFO films with correct stoichiometry (Ni:Fe=1:2) grow epitaxially on all four substrates, as confirmed by energy dispersive X-ray spectroscopy, transmission electron microscopy and x-ray diffraction. While the films on PMN-PT and PZN-PT substrates are partially strained, essentially complete strain relaxation occurs for films grown on MAO and STO. The formations of threading dislocations along with dark diffused contrast areas related to antiphase domains having a different cation ordering are observed on all four substrates. These crystal defects are correlated with lattice mismatch between the film and substrate and result in changes in magnetic properties of the films. Atomic resolution HAADF imaging and EDX line profiles show formation of a sharp interface between the film and the substrate with no inter-diffusion of Pb or other elements across the interface. Antiphase domains are observed to originate at the film-substrate interface.

  10. Defect structure in m-plane GaN grown on LiAlO{sub 2} using metalorganic and hydride vapour phase epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Wernicke, Tim; Netzel, Carsten; Richter, Eberhard; Knauer, Arne; Brunner, Frank; Weyers, Markus [FBH Berlin (Germany); Mogliatenko, Anna; Neumann, Wolfgang [AG Kristallographie, Institut fuer Physik, HU Berlin (Germany); Kneissl, Michael [FBH Berlin (Germany); Institute of Solid State Physics, TU Berlin (Germany)

    2008-07-01

    The FWHM of symmetric (10 anti 10) XRD rocking curves of m-plane GaN grown on LiAlO{sub 2} is anisotropic. By investigating the microstructure with transmission electron microscopy (TEM) we identified basal plane stacking faults (BSF) and stacking mismatch boundaries (SMB) in the GaN layers. BSFs are aligned in-plane along the a-direction and therefore cause an anisotropic broadening of the FWHM{sub (10 anti 10)} with incidence along [0001]. SMBs have no preferential direction and hence result in an isotropic broadening of the FWHM{sub (10 anti 10)}. We observed that this anisotropy can be reduced by lowering the MOVPE growth temperature. We propose that the lowering of the growth temperature leads to a reduction of BSFs which is accompanied by an increase in SMBs. The MOVPE grown layers were used as templates for the growth of 200 {mu}m thick m-plane GaN layers by HVPE. During HVPE growth the LiAlO{sub 2} substrate thermally decomposed and peeled off after cool-down. On the surface a network of cracks not being aligned to crystallographic directions was found. The layers were not transparent probably due to metallic Ga inclusions and exhibited an asymmetric bow according to the lattice anisotropy of the (100) LiAlO{sub 2} surface.

  11. Structural characterization of ZnTe grown by atomic-layer-deposition regime on GaAs and GaSb (100) oriented substrates

    Energy Technology Data Exchange (ETDEWEB)

    Castillo-Ojeda, Roberto Saúl [Universidad Politécnica de Pachuca (Mexico); Díaz-Reyes, Joel; Peralta-Clara, María de la Cruz; Veloz-Rendón, Julieta Salomé, E-mail: joel_diaz_reyes@hotmail.com [Centro de Investigación en Biotecnología Aplicada, Instituto Politécnico Nacional, Tlaxcala, (Mexico); Galván-Arellano, Miguel [Centro de Investigación y de Estudios Avanzados, Instituto Politécnico Nacional (Mexico); Anda-Salazar, Francisco de [Instituto de Investigación en Comunicación Óptica, Universidad Autónoma de San Luis Potosí (Mexico); Contreras-Rascon, Jorge Indalecio [Departamento de Física, Universidad de Sonora (Mexico)

    2017-10-15

    This work presents the characterization of ZnTe nano layers grown on GaAs and GaSb (100) substrates by the Atomic Layer Deposition (ALD) regime. Under certain conditions, the alternating exposition of a substrate surface to the element vapours makes possible the growth of atomic layers in a reactor where the atmosphere is high-purity hydrogen. ZnTe was grown simultaneously on GaAs and GaSb at the same run, allowing, a comparison between the effects produced by the superficial processes due to the different used substrates, thereby eliminating possible unintended changes of growth parameters. Nano layers on GaSb maintained their shiny appearance even at temperatures near 420°C. It was found that for exposure times below 2.5 s there was not growth on GaAs, while for GaSb the shortest time was 1.5 s at 385°C. By HRXRD the peak corresponding to (004) diffraction plane of ZnTe was identified and investigated, the FWHM resulted very wide (600-800 arcsec) indicating a highly distorted lattice mainly due to mosaicity. Raman scattering shows the peak corresponding to LO-ZnTe, which is weak and slightly shifted in comparison with the reported for the bulk ZnTe at 210 cm{sup -1}. Additionally, the measurements suggest that the crystalline quality have a dependence with the growth temperature. (author)

  12. Portrait of a Teacher-Led School

    Science.gov (United States)

    Nazareno, Lori

    2013-01-01

    Imagine a school with no principal and with a leadership structure that holds teachers accountable for the learning of all students. About 50 such teacher-led schools currently operate across the United States, and this article tells the story of one of them. The Mathematics and Science Leadership Academy (MSLA) in Denver, Colorado, serves about…

  13. Structural and electrical characterization of ultra-thin SrTiO3 tunnel barriers grown over YBa2Cu3O7 electrodes for the development of high Tc Josephson junctions.

    Science.gov (United States)

    Félix, L Avilés; Sirena, M; Guzmán, L A Agüero; Sutter, J González; Vargas, S Pons; Steren, L B; Bernard, R; Trastoy, J; Villegas, J E; Briático, J; Bergeal, N; Lesueur, J; Faini, G

    2012-12-14

    The transport properties of ultra-thin SrTiO(3) (STO) layers grown over YBa(2)Cu(3)O(7) electrodes were studied by conductive atomic force microscopy at the nano-scale. A very good control of the barrier thickness was achieved during the deposition process. A phenomenological approach was used to obtain critical parameters regarding the structural and electrical properties of the system. The STO layers present an energy barrier of 0.9 eV and an attenuation length of 0.23 nm, indicating very good insulating properties for the development of high-quality Josephson junctions.

  14. Structural and electrical characterization of ultra-thin SrTiO3 tunnel barriers grown over YBa2Cu3O7 electrodes for the development of high Tc Josephson junctions

    International Nuclear Information System (INIS)

    Avilés Félix, L; Sirena, M; Agüero Guzmán, L A; González Sutter, J; Pons Vargas, S; Steren, L B; Bernard, R; Trastoy, J; Villegas, J E; Briático, J; Bergeal, N; Lesueur, J; Faini, G

    2012-01-01

    The transport properties of ultra-thin SrTiO 3 (STO) layers grown over YBa 2 Cu 3 O 7 electrodes were studied by conductive atomic force microscopy at the nano-scale. A very good control of the barrier thickness was achieved during the deposition process. A phenomenological approach was used to obtain critical parameters regarding the structural and electrical properties of the system. The STO layers present an energy barrier of 0.9 eV and an attenuation length of 0.23 nm, indicating very good insulating properties for the development of high-quality Josephson junctions. (paper)

  15. Enabling factors for the improvement of nitride-based LED efficiency

    International Nuclear Information System (INIS)

    Laubsch, Ansgar; Bergbauer, Werner; Sabathil, Matthias; Peter, Matthias; Meyer, Tobias; Bruederl, Georg; Linder, Norbert; Streubel, Klaus; Oberschmid, Raimund; Hahn, Berthold; Wagner, Joachim

    2008-01-01

    Recent progress in the epitaxial growth of LEDs with InGaN/GaN quantum-well heterostructures has led to a significant enhancement of output power. In this talk, we will discuss the mechanisms limiting the devices' internal efficiency and identify enabling factors for further improvements. We compare samples with different Indium content as well as different design of the active layer. Although heteroepitaxial growth of GaN on sapphire generates high defect densities, non-radiative defect-related Shockley-Read-Hall recombination does not seem to substantially limit the efficiency of standard InGaN/GaN LED structures. We rather discuss a supplemental Auger-like non-radiative path for carrier recombination that becomes dominant at quantum-well carrier densities typical for LED operation. Additionally, the piezo-field induced reduced overlap of electron and hole wavefunction in standard c-plane grown InGaN quantum wells reduces the radiative recombination rate

  16. New dental applications with LEDs

    DEFF Research Database (Denmark)

    Argyraki, A.; Ou, Yiyu; Petersen, Paul Michael

    Visible and ultraviolet LEDs will in the future give rise to new dental applications. Fluorescence imaging, photodynamic therapy and photoactivated disinfection are important future candidates for diagnostics and treatment in dentistry.......Visible and ultraviolet LEDs will in the future give rise to new dental applications. Fluorescence imaging, photodynamic therapy and photoactivated disinfection are important future candidates for diagnostics and treatment in dentistry....

  17. Correlation between atomic structure and magnetic properties of La0.7Ca0.3MnO3 thin films grown on SrTiO3 (1 0 0)

    International Nuclear Information System (INIS)

    Rubio-Zuazo, J.; Andres, A. de; Taboada, S.; Prieto, C.; Martinez, J.L.; Castro, G.R.

    2005-01-01

    The crystallographic structure of La 0.7 Ca 0.3 MnO 3 (LCMO) ultra-thin films grown on SrTiO 3 (0 0 1) has been investigated by surface X-ray diffraction (SXD) and the correlation between their transport and magnetic properties and crystallographic structure is discussed. LCMO thin films in a thickness range between 2.4 and 27 nm were grown by DC-sputtering on SrTiO 3 (0 0 1). We distinguish two different crystallographic structures associated to the 2.4 and 27 nm thin films, respectively. The 27 nm film structure corresponds to a tetragonal perovskite (space group Pbnm), as has been reported for bulk LCMO. For the 2.4 nm film the La/Ca ions are located at the regular position of an ideal perovskite and the MnO 6 octahedrons are aligned along the c-axis. The MnO 2 stacking layer (basal plane) is distorted and coplanar to the a-b crystallographic axis with an anti-correlation between octahedron layers. This observed distortion is not compatible with the Pbnm space group. The new phase, which cannot be excluded to coexist at the interface of thicker films, can be described, as an example, through an I4/mcm or Pbcn space group. Based on the observed structure, plausible models to explain their transport and magnetic behaviour are proposed. For the 2.4 nm film, an octahedron in-plane (basal plane) distortion induced by the substrate is observed. Thicker films behave structurally and magnetically as bulk-like materials

  18. Packaging technology of LEDs for LCD backlights

    International Nuclear Information System (INIS)

    Fan Manning; Liang Meng; Wang Guohong

    2009-01-01

    We design a package patterned with red and green emitting phosphors excited by a blue LED to emit tri-basic mixing color. For high backlight display quality, we compare several phosphors. According to our measurements, green phosphors 0752G, 0753G and red phosphor 0763R are preferred for producing a good backlight source. Compared to RGB-LED backlight units, this frame typically benefits the lighting uniformity, and can simplify the structures. It also provides higher color render and better CCT than the traditional package method of a yellow phosphor with a blue chip. However, its light efficiency needs to be further improved for the use of backlights for LCDs.

  19. Structural Properties Characterized by the Film Thickness and Annealing Temperature for La2O3 Films Grown by Atomic Layer Deposition.

    Science.gov (United States)

    Wang, Xing; Liu, Hongxia; Zhao, Lu; Fei, Chenxi; Feng, Xingyao; Chen, Shupeng; Wang, Yongte

    2017-12-01

    La 2 O 3 films were grown on Si substrates by atomic layer deposition technique with different thickness. Crystallization characteristics of the La 2 O 3 films were analyzed by grazing incidence X-ray diffraction after post-deposition rapid thermal annealing treatments at several annealing temperatures. It was found that the crystallization behaviors of the La 2 O 3 films are affected by the film thickness and annealing temperatures as a relationship with the diffusion of Si substrate. Compared with the amorphous La 2 O 3 films, the crystallized films were observed to be more unstable due to the hygroscopicity of La 2 O 3 . Besides, the impacts of crystallization characteristics on the bandgap and refractive index of the La 2 O 3 films were also investigated by X-ray photoelectron spectroscopy and spectroscopic ellipsometry, respectively.

  20. Structural and electronic properties of InN epitaxial layer grown on c-plane sapphire by chemical vapor deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Barick, Barun Kumar, E-mail: bkbarick@gmail.com; Prasad, Nivedita; Saroj, Rajendra Kumar; Dhar, Subhabrata [Department of Physics, Indian Institute of Technology, Bombay, Mumbai 400076 (India)

    2016-09-15

    Growth of InN epilayers on c-plane sapphire substrate by chemical vapor deposition technique using pure indium metal and ammonia as precursors has been systematically explored. It has been found that [0001] oriented indium nitride epitaxial layers with smooth surface morphology can be grown on c-plane sapphire substrates by optimizing the growth conditions. Bandgap of the film is observed to be Burstein–Moss shifted likely to be due to high background electron concentration. It has been found that the concentration of this unintentional doping decreases with the increase in the growth temperature and the ammonia flux. Epitaxial quality on the other hand deteriorates as the growth temperature increases. Moreover, the morphology of the deposited layer has been found to change from flat top islands to faceted mounds as the flow rate of ammonia increases. This phenomenon is expected to be related to the difference in surface termination character at low and high ammonia flow rates.

  1. Photoluminescence and Band Alignment of Strained GaAsSb/GaAs QW Structures Grown by MBE on GaAs

    Directory of Open Access Journals (Sweden)

    Nigamananda Samal

    2010-02-01

    Full Text Available An in-depth optimization of growth conditions and investigation of optical properties including discussions on band alignment of GaAsSb/GaAs quantum well (QW on GaAs by molecular beam epitaxy (MBE are reported. Optimal MBE growth temperature of GaAsSb QW is found to be 470 ± 10 °C. GaAsSb/GaAs QW with Sb content ~0.36 has a weak type-II band alignment with valence band offset ratio QV ~1.06. A full width at half maximum (FWHM of ~60 meV in room temperature (RT photoluminescence (PL indicates fluctuation in electrostatic potential to be less than 20 meV. Samples grown under optimal conditions do not exhibit any blue shift of peak in RT PL spectra under varying excitation.

  2. Characterization of reclaimed GaAs substrates and investigation of reuse for thin film InGaAlP LED epitaxial growth

    Energy Technology Data Exchange (ETDEWEB)

    Englhard, M.; Klemp, C.; Behringer, M.; Rudolph, A. [OSRAM Opto Semiconductors GmbH, Leibnizstr. 4, 93055 Regensburg (Germany); Skibitzki, O.; Zaumseil, P. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Schroeder, T. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Institute of Physics and Chemistry, BTU Cottbus-Senftenberg, Konrad-Zuse-Str. 1, 03046 Cottbus (Germany)

    2016-07-28

    This study reports a method to reuse GaAs substrates with a batch process for thin film light emitting diode (TF-LED) production. The method is based on an epitaxial lift-off technique. With the developed reclaim process, it is possible to get an epi-ready GaAs surface without additional time-consuming and expensive grinding/polishing processes. The reclaim and regrowth process was investigated with a one layer epitaxial test structure. The GaAs surface was characterized by an atomic force microscope directly after the reclaim process. The crystal structure of the regrown In{sub 0.5}(Ga{sub 0.45}Al{sub 0.55}){sub 0.5}P (Q{sub 55}) layer was investigated by high resolution x-ray diffraction and scanning transmission electron microscopy. In addition, a complete TF-LED grown on reclaimed GaAs substrates was electro-optically characterized on wafer level. The crystal structure of the epitaxial layers and the performance of the TF-LED grown on reclaimed substrates are not influenced by the developed reclaim process. This process would result in reducing costs for LEDs and reducing much arsenic waste for the benefit of a green semiconductor production.

  3. Effect of Al mole fraction on structural and electrical properties of AlxGa1-xN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Hussein, A. SH.; Hassan, Z.; Thahab, S.M.; Ng, S.S.; Hassan, H. Abu; Chin, C.W.

    2011-01-01

    The effect of Al mole fractions on the structural and electrical properties of Al x Ga 1-x N/GaN thin films grown by plasma-assisted molecular beam epitaxy (PA-MBE) on Si (1 1 1) substrates has been investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and current-voltage (I-V) measurements. X-ray results revealed that the AlGaN/GaN/AlN was epitaxially grown on Si substrate. By applying Vegard's law, the Al mole fractions of Al x Ga 1-x N samples were found to be 0.11, 0.24, 0.30 and 0.43, respectively. The structural and morphology results indicated that there is a relatively larger tensile strain for the sample with the smallest Al mole fraction; while a smaller compressive strain and larger grain size appear with Al mole fraction equal to 0.30. The strain gets relaxed with the highest Al mole fraction sample. Finally, the linear relationship between the barrier height and Al mole fraction was obtained.

  4. Growth and coalescence control of inclined c-axis polar and semipolar GaN multilayer structures grown on Si(111), Si(112), and Si(115) by metalorganic vapor phase epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Szymański, Tomasz, E-mail: tomasz.szymanski@pwr.edu.pl; Wośko, Mateusz; Paszkiewicz, Bartłomiej; Paszkiewicz, Bogdan; Paszkiewicz, Regina [The Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-372 Wroclaw (Poland); Sankowska, Iwona [The Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warszawa (Poland)

    2016-09-15

    Herein, silicon substrates in alternative orientations from the commonly used Si(111) were used to enable the growth of polar and semipolar GaN-based structures by the metalorganic vapor phase epitaxy method. Specifically, Si(112) and Si(115) substrates were used for the epitaxial growth of nitride multilayer structures, while the same layer schemes were also deposited on Si(111) for comparison purposes. Multiple approaches were studied to examine the influence of the seed layers and the growth process conditions upon the final properties of the GaN/Si(11x) templates. Scanning electron microscope images were acquired to examine the topography of the deposited samples. It was observed that the substrate orientation and the process conditions allow control to produce an isolated GaN block growth or a coalesced layer growth, resulting in inclined c-axis GaN structures under various forms. The angles of the GaN c-axis inclination were determined by x-ray diffraction measurements and compared with the results obtained from the analysis of the atomic force microscope (AFM) images. The AFM image analysis method to determine the structure tilt was found to be a viable method to estimate the c-axis inclination angles of the isolated blocks and the not-fully coalesced layers. The quality of the grown samples was characterized by the photoluminescence method conducted at a wide range of temperatures from 77 to 297 K, and was correlated with the sample degree of coalescence. Using the free-excitation peak positions plotted as a function of temperature, analytical Bose-Einstein model parameters were fitted to obtain further information about the grown structures.

  5. Practical lighting design with LEDs

    CERN Document Server

    Lenk, Ron

    2016-01-01

    The second edition of Practical Lighting Design with LEDs has been revised and updated to provide the most current information for developing light-emitting diodes products. The authors, noted authorities in the field, offer a review of the most relevant topics including optical performance, materials, thermal design, and modeling and measurement. Comprehensive in scope, the text covers all the information needed to design LEDs into end products.

  6. Standardization of UV LED measurements

    Science.gov (United States)

    Eppeldauer, G. P.; Larason, T. C.; Yoon, H. W.

    2015-09-01

    Traditionally used source spectral-distribution or detector spectral-response based standards cannot be applied for accurate UV LED measurements. Since the CIE standardized rectangular-shape spectral response function for UV measurements cannot be realized with small spectral mismatch when using filtered detectors, the UV measurement errors can be several times ten percent or larger. The UV LEDs produce broadband radiation and both their peaks or spectral bandwidths can change significantly. The detectors used for the measurement of these LEDs also have different spectral bandwidths. In the discussed example, where LEDs with 365 nm peak are applied for fluorescent crack-recognition using liquid penetrant (non-destructive) inspection, the broadband radiometric LED (signal) measurement procedure is standardized. A UV LED irradiance-source was calibrated against an FEL lamp standard to determine its spectral irradiance. The spectral irradiance responsivity of a reference UV meter was also calibrated. The output signal of the reference UV meter was calculated from the spectral irradiance of the UV source and the spectral irradiance responsivity of the reference UV meter. From the output signal, both the integrated irradiance (in the reference plane of the reference meter) and the integrated responsivity of the reference meter were determined. Test UV meters calibrated for integrated responsivity against the reference UV meter, can be used to determine the integrated irradiance from a field UV source. The obtained 5 % (k=2) measurement uncertainty can be decreased when meters with spectral response close to a constant value are selected.

  7. Graphic Grown Up

    Science.gov (United States)

    Kim, Ann

    2009-01-01

    It's no secret that children and YAs are clued in to graphic novels (GNs) and that comics-loving adults are positively giddy that this format is getting the recognition it deserves. Still, there is a whole swath of library card-carrying grown-up readers out there with no idea where to start. Splashy movies such as "300" and "Spider-Man" and their…

  8. Light out-coupling from LEDs by means of metal nanoparticles; Lichtauskopplung aus LEDs mittels Metallnanoteilchen

    Energy Technology Data Exchange (ETDEWEB)

    Goehler, Tino

    2010-12-17

    The external quantum efficiency of light-emitting diodes (LEDs) based on Al- GaAs/InGaAlP is limited by total internal reflection because of the high refractive index (typically between 3 and 4) of the semiconductor. Metal nanoparticles (MNP) deposited on the surface of the LED can be used as dipole scatterers in order to enhance the emission of the LED. In this thesis, first, single gold nanoparticles of various sizes deposited on such an LED were investigated. A clear enhancement is detected as long as the dipole plasmon resonance of the particle is at a shorter wavelength than the LED emission. If the plasmon resonance coincides with the LED emission or is at a larger wavelength, the enhancement turns into suppression. Numerical simulations indicate that this latter effect is mainly caused by the particle quadrupole resonance producing extra absorption. Arrays of MNPs can be produced by a special mask technique called ''Fischer pattern nanolithography'' and manipulated in shape and size by additional steps. Originally, the MNPs produced by this technique are triangular in shape and turn out to suppress the LED emission. After transformation of the particles to spheres, a clear enhancement was detected. Light that would otherwise remain trapped inside the substrate is coupled out by resonant plasmonic scattering. Investigations on analogous structures on a transparent high-index material (GaP) indicate a stronger coupling between the particles than expected on the basis of literature data. (orig.)

  9. Investigations on structural and electrical parameters of p-Si/ MgxZn1-xO thin film heterojunction diodes grown by RF magnetron sputtering technique

    Science.gov (United States)

    Singh, Satyendra Kumar; Hazra, Purnima

    2018-05-01

    This work reports fabrication and characterization of p-Si/ MgxZn1-xO thin film heterojunction diodes grown by RF magnetron sputtering technique. In this work, ZnO powder was mixed with MgO powder at per their weight percentage from 0 to 10% to prepare MgxZn1-xO target. The microstructural, surface morphological and optical properties of as-deposited p-Si/MgxZn1-xO heterostructure thin films have been studied using X-ray Diffraction, atomic force microscopy and variable angle ellipsometer. XRD spectra exhibit that undoped ZnO thin films has preferred crystal orientation in (002) plane. However, with increase in Mg-doping, ZnO (101) crystal plane is enhanced progressively due to phase segregation, even though preferred growth orientation of ZnO crystals is still towards (002) plane. The electrical characteristics of Si/ MgxZn1-xO heterojunction diodes with large area Al/Ti ohmic contacts are evaluated using semiconductor parameter analyzer. With rectification ratio of 27894, reverse saturation current of 20.5 nA and barrier height of 0.724 eV, Si/Mg0.5Zn0.95O thin film heterojunction diode is believed to have potential to be used in wider bandgap nanoelectronic device applications.

  10. The effects of thermal annealing on the structure and the electrical transport properties of ultrathin gadolinia-doped ceria films grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Rodrigo, K.; Pryds, N.; Theil Kuhn, L.; Esposito, V.; Linderoth, S. [Technical University of Denmark, Fuel Cells and Solid State Chemistry Division, Risoe DTU, Roskilde (Denmark); Heiroth, S.; Lippert, T. [Paul Scherrer Institute, General Energy Research Department, Villigen PSI (Switzerland); Schou, J. [Technical University of Denmark, Department of Photonics Engineering, Roskilde (Denmark)

    2011-09-15

    Ultrathin crystalline films of 10 mol% gadolinia-doped ceria (CGO10) are grown on MgO (100) substrates by pulsed laser deposition at a moderate temperature of 400 C. As-deposited CGO10 layers of approximately 4 nm, 14 nm, and 22 nm thickness consist of fine grains with dimensions {<=}{proportional_to}11 nm. The films show high density within the thickness probed in the X-ray reflectivity experiments. Thermally activated grain growth, density decrease, and film surface roughening, which may result in the formation of incoherent CGO10 islands by dewetting below a critical film thickness, are observed upon heat treatment at 400 C and 800 C. The effect of the grain coarsening on the electrical characteristics of the layers is investigated and discussed in the context of a variation of the number density of grain boundaries. The results are evaluated with regard to the use of ultrathin CGO10 films as seeding templates for the moderate temperature growth of thick solid electrolyte films with improved oxygen transport properties. (orig.)

  11. Structure and magnetoresistance of La0.67Ca0.33MnO3 films grown coherently on (001)NdGaO3

    International Nuclear Information System (INIS)

    Bojkov, Yu.A.; Danilov, V.A.; Bojkov, A.Yu.

    2003-01-01

    The (001) La 0.67 Ca 0.33 MnO 3 films, 40-120 nm thick, grown through the method of the laser evaporation on the (001)NdGaO 3 , are studied. The crystalline lattice parameters, measured for the La 0.67 Ca 0.33 MnO 3 film in the substrate plane α parallel = 3.851 A and along the normal to its surface α perpendicular = 3.850 A practically coincide with the parameter of the pseudocubic elementary cell of the neodymium gallate. The elementary cell volume in the La 0.67 Ca 0.33 MnO 3 film was insignificantly lesser than the corresponding value for the stoichiometric voluminous samples. The position of the maximum on the specific resistance dependence on the temperature did not depend on the La 0.67 Ca 0.33 MnO 3 film thickness. The maximum values of the negative magnetoresistance (MR ≅ 0.25, H = 0.4 T) for the La 0.67 Ca 0.33 MnO 3 films were observed at the temperatures of 239-244 K [ru

  12. Effects of temperature and Mo2C layer on stress and structural properties in CVD diamond film grown on Mo foil

    International Nuclear Information System (INIS)

    Long, Fen; Wei, Qiuping; Yu, Z.M.; Luo, Jiaqi; Zhang, Xiongwei; Long, Hangyu; Wu, Xianzhe

    2013-01-01

    Highlights: •Polycrystalline diamond films were grown on Mo foil substrates by HF-CVD. •We investigated the temperature dependence of the film stress for each sample. •We show that how the thermal stress and intrinsic stress affects the total stress. •The stress of Mo foil substrate obtained by XRD was investigated in this study. •The effect of Mo 2 C interface layer for stress of multilayer system was considered. -- Abstract: Polycrystalline diamond films have been prepared by hot-filament-assisted chemical vapor deposition (HFCVD) on Mo foils. The morphology, growth rate, phase composition, element distribution and residual stress of the films at different temperature were investigated by field-emission scanning electron microscopy, Raman spectrum, field emission electron probe microanalysis and X-ray diffraction. Results show that the residual stress of the diamond films is compressive. The thermal stress plays a decisive role in the total stress, while the intrinsic stress can change the trend of the total stress. The residual stress of substrate gradually changes from tensile stress to compressive stress with the increase of the deposited temperature. A Mo 2 C interlayer is formed during deposition process, and this layer has an important influence on the stresses of films and substrates

  13. Effects of buffer layer on the structural and electrical properties of InAsSb epilayers grown on GaAs(001)

    International Nuclear Information System (INIS)

    Jayavel, P.; Nakamura, S.; Koyama, T.; Hayakawa, Y.

    2006-01-01

    InAsSb ternary epilayers with arsenic composition of 0.5 have been grown on GaAs(001) substrates. Linear-graded and step-graded InAsSb buffer layers with an InSb layer have been used to relax lattice mismatch between the epilayer and substrate. X-ray diffraction results of the epilayers indicate that an enhancement in the peak intensity of the buffer layer samples is due to improved crystalline quality of the epilayers. We find that the growth technique of the buffer layer strongly influences the surface morphology and roughness of the epilayer. Hall effect measurements of the step-graded buffer layer samples show an order of magnitude higher electron mobility than the direct and linear-graded buffer layer samples. These results demonstrate that high crystalline quality and electron mobility of the InAs 0.5 Sb 0.5 ternary epilayers can be achieved by using the step-graded InAsSb buffer layers. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Effect of the pos-deposition annealing with CdCl2 on the optical, structural and morphological properties of CdTe-films grown by CSS

    International Nuclear Information System (INIS)

    Ricárdez-Jiménez, C; Pérez-Hernández, G; Angulo-Córdova, Q; Díaz-Flores, L L; Pantoja-Enríquez, J; Escobar-Morales, B; Hernández-Torres, M E; Gracia-Jiménez, J M; Silva-González, N R; Mathew, X

    2013-01-01

    A set of CdTe films grown by the CSS method were annealed in aCdCl 2 atmosphere of during 5 min at 345, 365, 385, 405, 425, 435, 445 and 455 °C. The films were characterized before and after annealing by the SEM, EDS, X-ray, optical absorption and photoluminescence (PL) techniques. As the annealing temperature is increased a tendency to improve the Cd/Te ratio is observed. After the thermal treatment at 430 °C the films reach the stoichiometry. A deviation from stoichiometry appears again for annealing temperatures higher than 430 °C. The PL spectra of the films at 6.5 K exhibit two emission bands, one corresponds to the defects energy levels band (1.4–1.5 eV) and the other is located in the interval from 1.564 to 1.584 eV (pA). For annealing temperatures higher than 430 °C an increment in the intensity and energy position of pA is observed, while for annealing temperatures less than 430 °C the behavior is irregular. In the emission mechanisms of pA the expected impurities and/or native defects in the material such as the V Te , V Cd Cl T e, Cd Te and Cl Te are involved.

  15. In-situ metrology in multiwafer reactors during MOVPE of AIN-based UV-LEDs (Conference Presentation)

    Science.gov (United States)

    Knauer, Arne; Brunner, Frank; Kolbe, Tim; Hagedorn, Sylvia; Kueller, Viola; Weyers, Markus

    2017-02-01

    UV-LEDs are of great interest for applications like disinfection, gas sensing, and phototherapy. The cost sensitive LEDs are commonly grown by MOVPE on transparent AlN/sapphire templates. The large thermal and lattice mismatch between AlN and sapphire generates a very high dislocation density (DD) and causes big challenges in strain management. The threading dislocation density should be reduced to the order of low 108cm-2 for high internal efficiency of the AlGaN based UV-LED structures. The TDD will be reduced mainly by dislocation annihilation during the growth of thick Al(Ga)N layers, which is a challenge in terms of strain management. We present how in-situ reflectometry and curvature measurement (EpiCurveTT(at)LayTec) in commercial multiwafer growth reactors helps to optimize the growth processes concerning growth rates, surface roughening and avoidance of layer cracking on 2inch substrates and enhance the reproducibility of epitaxial growth. The growth of up to 3 μm thick planar AlN templates and up-to 10 μm thick AlN/sapphire templates by epitaxial lateral overgrowth of stripe patterned templates for UV-C LED structures will be highlighted. The implementation of different types of AlN/GaN superlattices for the subsequent growth of up to 5μm thick Al0.5Ga0.5N layer for UVB LED structures will be shown. Correlations to ex-situ measurements like X-ray diffraction and TEM analysis of defects in the LED structures will be shown. Some challenges of in-situ control through very narrow viewports as in Close Coupled Showerhead reactors will be discussed as well as the influence of silicon doping on curvature and dislocation density in Al(Ga)N layers.

  16. Response of Eustoma Leaf Phenotype and Photosynthetic Performance to LED Light Quality

    Directory of Open Access Journals (Sweden)

    Md Zohurul Kadir Roni

    2017-10-01

    Full Text Available In a controlled environment, light from light-emitting diodes (LEDs has been associated with affecting the leaf characteristics of Eustoma. LEDs help plant growth and development, yet little is known about photosynthetic performance and related anatomical features in the early growth stage of Eustoma leaves. In this study, we examined the effects of blue (B, red (R, and white (W LEDs on the photosynthetic performance of Eustoma leaves, as well as leaf morphology and anatomy including epidermal layer thickness, palisade cells, and stomatal characteristics. Leaves grown under B LEDs were thicker and had a higher chlorophyll content than those grown under the R and W LEDs. Leaves under B LEDs had greater net photosynthetic rates (A, stomatal conductance (gs, and transpiration rates (E, especially at a higher photon flux density (PPFD, that resulted in a decrease in the intercellular CO2 concentration (Ci, than leaves under the W and R LEDs. B LEDs resulted in greater abaxial epidermal layer thickness and palisade cell length and width than the R and W LED treatments. The palisade cells also developed a more cylindrical shape in response to the B LEDs. B LED leaves also showed greater guard cell length, breadth, and area, and stomatal density, than W or R LEDs, which may contribute to increased A, gs and E at higher PPFDs.

  17. Evolution of the optical transitions in AlxGa1-xAs/GaAs quantum well structures grown on GaAs buffers with different surface treatments by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Mejia-Garcia, C.; Caballero-Rosas, A.; Lopez-Lopez, M.; Winter, A.; Pascher, H.; Lopez-Lopez, J.L.

    2010-01-01

    Al 0.3 Ga 0.7 As/GaAs Quantum Well structures were grown by molecular beam epitaxy (MBE) on a 500 nm thick GaAs buffer layer subjected to the following surface processes: a) in-situ Cl 2 etching at 70 o C and 200 o C, b) air-exposure for 30 min. The characteristics of these samples were compared to those of a continuously grown sample with no processing (control sample). We obtained the quantum wells energy transitions using photoreflectance spectroscopy as a function of the temperature (8-300 K), in the range of 1.2 to 2.1 eV. The sample etched at 200 o C shows a larger intensity of the quantum well peaks in comparison to the others samples. We studied the temperature dependence of the excitonic energies in the quantum wells (QWs) as well as in GaAs using three different models; the first one proposed by Varshni [4], the second one by Vina et al. [5], and the third one by Paessler and Oelgart [6]. The Paessler model presents the best fitting to the experimental data.

  18. Optical characterization of ultrabright LEDs

    International Nuclear Information System (INIS)

    Benavides, Juan Manuel; Webb, Robert H.

    2005-01-01

    Ultrabright light emitting diodes (LEDs) are a new light source for visual psychophysics and microscopy. The new LEDs are intended primarily for room and exterior illumination, and the manufacturers' specifications are adequate for that. However, we use them as light sources in situations where a more complete characterization may be useful. For one set of LEDs we have measured the radiometric intensity and its distribution in space and wavelength, and we have tested for interactions of these variables and their dependence on driver configuration. We describe techniques for making these measurements and give a link to a simple calculator for converting among radiometric and photometric measures, as well as an evaluation of the safety considerations these very bright sources demand

  19. High-Brightness Blue Light-Emitting Diodes Enabled by a Directly Grown Graphene Buffer Layer.

    Science.gov (United States)

    Chen, Zhaolong; Zhang, Xiang; Dou, Zhipeng; Wei, Tongbo; Liu, Zhiqiang; Qi, Yue; Ci, Haina; Wang, Yunyu; Li, Yang; Chang, Hongliang; Yan, Jianchang; Yang, Shenyuan; Zhang, Yanfeng; Wang, Junxi; Gao, Peng; Li, Jinmin; Liu, Zhongfan

    2018-06-08

    Single-crystalline GaN-based light-emitting diodes (LEDs) with high efficiency and long lifetime are the most promising solid-state lighting source compared with conventional incandescent and fluorescent lamps. However, the lattice and thermal mismatch between GaN and sapphire substrate always induces high stress and high density of dislocations and thus degrades the performance of LEDs. Here, the growth of high-quality GaN with low stress and a low density of dislocations on graphene (Gr) buffered sapphire substrate is reported for high-brightness blue LEDs. Gr films are directly grown on sapphire substrate to avoid the tedious transfer process and GaN is grown by metal-organic chemical vapor deposition (MOCVD). The introduced Gr buffer layer greatly releases biaxial stress and reduces the density of dislocations in GaN film and In x Ga 1- x N/GaN multiple quantum well structures. The as-fabricated LED devices therefore deliver much higher light output power compared to that on a bare sapphire substrate, which even outperforms the mature process derived counterpart. The GaN growth on Gr buffered sapphire only requires one-step growth, which largely shortens the MOCVD growth time. This facile strategy may pave a new way for applications of Gr films and bring several disruptive technologies for epitaxial growth of GaN film and its applications in high-brightness LEDs. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH3 molecular beam epitaxy

    KAUST Repository

    Browne, David A.; Mazumder, Baishakhi; Wu, Yuh-Renn; Speck, James S.

    2015-01-01

    on electron transport through quantum well active regions. These unipolar structures served as a test vehicle to test our 2D model of the effect of compositional fluctuations on polarization-induced barriers. Variables that were systematically studied included

  1. Comparative study on stress in AlGaN/GaN HEMT structures grown on 6H-SiC, Si and on composite substrates of the 6H-SiC/poly-SiC and Si/poly-SiC

    International Nuclear Information System (INIS)

    Guziewicz, M; Kaminska, E; Piotrowska, A; Golaszewska, K; Domagala, J Z; Poisson, M-A; Lahreche, H; Langer, R; Bove, P

    2008-01-01

    The stresses in GaN-based HEMT structures grown on both single crystal 6H SiC(0001) and Si(111) have been compared to these in the HEMT structures grown on new composite substrates engendered as a thin monocrystalline film attached to polycrystalline 3C-SiC substrate. By using HRXRD technique and wafer curvature method we show that stress of monocrystalline layer in composite substrates of the type mono-Si/poly-SiC is lower than 100 MPa and residual stress of epitaxial GaN buffer grown on the composite substrate does not exceed 0.31 GPa, but in the cases of single crystal SiC or Si substrates the GaN buffer stress is compressive in the range of -0.5 to -0.75 GPa. The total stress of the HEMT structure calculated from strains is consistent with the averaged stress of the multilayers stack measured by wafer curvature method. The averaged stress of HEMT structure grown on single crystals is higher than those in structures grown on composites substrates

  2. White LED motorcycle headlamp design

    Science.gov (United States)

    Sun, Wen-Shing

    2015-09-01

    The motorcycle headlamp is composed of a white LED module, an elliptical reflector, a parabolic reflector and a toric lens. We use non-sequential ray to improve the optical efficiency of the compound reflectors. Using the toric lens can meet ECE_113 regulation and obtain a good uniformity.

  3. Architecture-Led Safety Process

    Science.gov (United States)

    2016-12-01

    Contents Acknowledgments iv Abstract v 1 Introduction 1 2 Architecture -Led Processes and ALSA 2 3 ALSA Practices 5 3.1 Example System 8 4 Identify... Architecture Models 13 5 Identify Operational Hazards and Hazard Contributors 15 5.1 System Partitioning 15 5.2 Operational Context as a Control

  4. LED licht van de toekomst

    NARCIS (Netherlands)

    Zeiler, W.

    2009-01-01

    De gloeilamp is verleden tijd, na ongeveer 125 jaar na de ontdekking door Thomas Edison valt langzaam maar zeker binnen een decennium het doek. Australië heeft de klassieke gloeilamp al in de ban gedaan en vele landen volgen deze trend. De rol van de klassieke gloeilamp wordt overgenomen door LED.

  5. Structural and magnetic properties of La0.7Sr0.3MnO3 ferromagnetic thin film grown on PMN-PT by sol–gel method

    Directory of Open Access Journals (Sweden)

    Jing Zhang

    2017-08-01

    Full Text Available We report the preparation of epitaxial La0.7Sr0.3MnO3 thin films grown on (001-oriented 0.72Pb(Mg1∕3Nb2∕3O3-0.28PbTiO3 substrates by the sol–gel technique. The phase structure, magnetic properties and magnetoresistance of the samples are investigated by using high solution X-ray diffraction, atomic force microscopy, physical property measurement system, respectively. The La0.7Sr0.3MnO3 thin films display a well-defined hysteresis loop and typical ferromagnetism behavior at lower temperature. High magnetoresistance at 5T of 42% appears at 227K for La0.7Sr0.3MnO3 thin film.

  6. Effect of Zn-doping on the structural and optical properties of BaTiO3 thin films grown by pulsed laser deposition

    International Nuclear Information System (INIS)

    Fasasi, A.Y.; Maaza, M.; Rohwer, E.G.; Knoessen, D.; Theron, Ch.; Leitch, A.; Buttner, U.

    2008-01-01

    Thin films of zinc oxide doped barium titanate (BaZn x Ti 1-x O 3 ) have been prepared by pulsed laser ablation using different targets having zinc composition varying between x = 1 to 5 wt.% at a step of 1 wt.% on corning glass microscope slide and silicon substrates. X-ray diffraction analyses showed films to be of tetragonal phase with an average grain size of 20 nm and c/a ratio of 1.08 indicating lattice expansion due to ZnO incorporation. Atomic force microscopy studies of the prepared thin films indicated smooth surfaces with average roughness of 1.84 and 4.6 nm for as-deposited and sintered specimens respectively. Scanning electron microscopy showed films to be smooth and uniform. UV-Visible as well as Fourier Transform Infrared transmission measurements showed a transmission of more than 80% in the visible and 5-20% in the near infrared. The transmittance is strongly affected by annealing. There is a dependence of band gap energy on film thickness as well as on the amount of ZnO added. High ZnO dopant level led to an increase in the band gap

  7. Effect of Zn-doping on the structural and optical properties of BaTiO{sub 3} thin films grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Fasasi, A.Y. [Centre for Energy Research and Development, Obafemi Awolowo University, Ile-Ife, Osun State (Nigeria); Nano-Sciences Laboratories, Materials Research Group, iThemba LABS, National Research Foundation, P. O. Box 722, Somerset West 7129 (South Africa)], E-mail: ayfasasi@yahoo.co.uk; Maaza, M. [Nano-Sciences Laboratories, Materials Research Group, iThemba LABS, National Research Foundation, P. O. Box 722, Somerset West 7129 (South Africa); Rohwer, E.G. [Laser Research Institute, Department of Physics, University of Stellenbosch, Stellenbosch, Western Cape (South Africa); Knoessen, D. [Department of Physics, University of Western Cape, Private Bag X1001, Belville (South Africa); Theron, Ch. [Nano-Sciences Laboratories, Materials Research Group, iThemba LABS, National Research Foundation, P. O. Box 722, Somerset West 7129 (South Africa); Leitch, A. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Buttner, U. [Department of Electrical Engineering, University of Stellenbosch, Stellenbosch, Western Cape (South Africa)

    2008-07-31

    Thin films of zinc oxide doped barium titanate (BaZn{sub x}Ti{sub 1-x}O{sub 3}) have been prepared by pulsed laser ablation using different targets having zinc composition varying between x = 1 to 5 wt.% at a step of 1 wt.% on corning glass microscope slide and silicon substrates. X-ray diffraction analyses showed films to be of tetragonal phase with an average grain size of 20 nm and c/a ratio of 1.08 indicating lattice expansion due to ZnO incorporation. Atomic force microscopy studies of the prepared thin films indicated smooth surfaces with average roughness of 1.84 and 4.6 nm for as-deposited and sintered specimens respectively. Scanning electron microscopy showed films to be smooth and uniform. UV-Visible as well as Fourier Transform Infrared transmission measurements showed a transmission of more than 80% in the visible and 5-20% in the near infrared. The transmittance is strongly affected by annealing. There is a dependence of band gap energy on film thickness as well as on the amount of ZnO added. High ZnO dopant level led to an increase in the band gap.

  8. Electroluminescence from a n-ZnO/p-GaN hybrid LED

    Energy Technology Data Exchange (ETDEWEB)

    Behrends, Arne; Bakin, Andrey; Waag, Andreas [Institute of Semiconductor Technology, Hans-Sommer Str. 66, 38106 Braunschweig (Germany); Kwack, Ho-Sang; Dang, Le Si [Institut Neel, CNRS-UJF, 25, rue des Martyrs, 38042 Grenoble (France)

    2010-06-15

    In this work we report on the fabrication and characterization of a n-ZnO/p-GaN heterojunction LED. The p-GaN layer was fabricated using MOCVD on Al{sub 2}O{sub 3} with Mg as the acceptor whereas the ZnO nanostructures were grown in a very simple vapor transport system without any additionally doping. Room temperature electroluminescence (EL) measurements show green deep band emission centered at 2.3 eV which is clearly visible with the naked eye when the structure is forward biased. Cathodoluminescence mapping was performed to explain the absence of the band edge emission in the EL spectrum. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Effect of stimulated phase separation on properties of blue, green and monolithic white LEDs

    Energy Technology Data Exchange (ETDEWEB)

    Tsatsulnikov, A.F.; Lundin, W.V.; Sakharov, A.V.; Zavarin, E.E.; Nikolaev, A.E.; Sizov, V.S. [Ioffe Physical-Technical Institute, Russian Academy of Sciences, Politekhnicheskaya Str. 26, 194021 St. Petersburg (Russian Federation); Usov, S.O.; Zakgeim, A.L.; Mizerov, M.N. [Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, Politekhnicheskaya Str. 26, 194021 St. Petersburg (Russian Federation); Cherkashin, N.A.; Hytch, M. [CEMES-CNRS, Universite de Toulouse, Toulouse (France)

    2012-03-15

    Different methods of stimulation of phase separation in an InGaN QWs by technological methods and by design of structure were investigated. Effect of admixing of hydrogen during growth interruptions (GIs) after deposition of the InGaN QWs on their structural and optical properties and properties of InGaN-based LEDs was investigated. Effect of growth pressure on the phase separation was investigated and formation of separate InGaN islands at increase in growth pressure was revealed. It was shown that the phase separation is stimulated in composite InAlN/GaN/InGaN heterostructures and formation of well isolated InGaN islands was observed. Effect of the phase separation on the properties of the blue and deep green LEDs was investigated and strong changes in the spectral position and current dependence of the quantum efficiency were revealed. It was shown that formation of the island due to the phase separation allows control position and width of the emission line and maximum in current dependence of the quantum efficiency. Monolithic white LEDs are containing in active region blue and green InGaN QWs grown with applying of the GIs and emitting in spectral range from 440 nm to 560 nm were studied. Monolithic white LEDs having optimal design of active region demonstrate CCT in the range of 9000-12000 K and maximal external quantum efficiency up to 14 lm/W. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. X-ray absorption near-edge structure of GaN with high Mn concentration grown on SiC

    International Nuclear Information System (INIS)

    Sancho-Juan, O; Cantarero, A; Garro, N; Cros, A; Martinez-Criado, G; Salome, M; Susini, J; Olguin, D; Dhar, S

    2009-01-01

    By means of x-ray absorption near-edge structure (XANES) several Ga 1-x Mn x N (0.03 2 ↑ band localized in the gap region, and the corresponding anti-bonding state t 2 ↓, which seem to be responsible for the double structure which appears at the pre-edge absorption region. The shoulders and main absorption peak of the XANES spectra are attributed to transitions from the Mn(1s) band to the conduction bands, which are partially dipole allowed because of the Mn(4p) contribution to these bands.

  11. LED lamp color control system and method

    Science.gov (United States)

    Gaines, James; Clauberg, Bernd; Van Erp, Josephus A.M.

    2013-02-05

    An LED lamp color control system and method including an LED lamp having an LED controller 58; and a plurality of LED channels 60 operably connected to the LED controller 58, each of the plurality of LED channels 60 having a channel switch 62 in series with at least one shunted LED circuit 83, the shunted LED circuit 83 having a shunt switch 68 in parallel with an LED source 80. The LED controller 58 determines whether the LED source 80 is in a feedback controllable range, stores measured optical flux for the LED source 80 when the LED source 80 is in the feedback controllable range, and bypasses storing the measured optical flux when the LED source 80 is not in the feedback controllable range.

  12. LED lamp power management system and method

    Science.gov (United States)

    Gaines, James; Clauberg, Bernd; Van Erp, Josephus A. M.

    2013-03-19

    An LED lamp power management system and method including an LED lamp having an LED controller 58; a plurality of LED channels 60 operably connected to the LED controller 58, each of the plurality of LED channels 60 having a channel switch 62 in series with at least one shunted LED circuit 83, the shunted LED circuit 83 having a shunt switch 68 in parallel with an LED source 80. The LED controller 58 reduces power loss in one of the channel switch 62 and the shunt switch 68 when LED lamp electronics power loss (P.sub.loss) exceeds an LED lamp electronics power loss limit (P.sub.lim); and each of the channel switches 62 receives a channel switch control signal 63 from the LED controller 58 and each of the shunt switches 68 receives a shunt switch control signal 69 from the LED controller 58.

  13. Structure and properties of (Sr, Ca)CuO2-BaCuO2 superlattices grown by pulsed laser interval deposition

    NARCIS (Netherlands)

    Koster, Gertjan; Verbist, Karen; Rijnders, Augustinus J.H.M.; Rogalla, Horst; van Tendeloo, Gustaav; Blank, David H.A.

    2001-01-01

    We report on the preparation of CuBa2(SrxCa1¿x)nCun¿1Oy compounds by fabrication of (Ba,Sr,Ca)CuO2 superlattices with pulsed laser deposition (PLD). A technique called interval deposition is used to suppress multi-level or island growth resulting in high-quality superlattice structures. Both, the

  14. Uniform LED illuminator for miniature displays

    Science.gov (United States)

    Medvedev, Vladimir; Pelka, David G.; Parkyn, William A.

    1998-10-01

    The Total Internally Reflecting (TIR) lens is a faceted structure composed of prismatic elements that collect a source's light over a much larger angular range than a conventional Fresnel lens. It has been successfully applied to the efficient collimation of light from incandescent and fluorescent lamps, and from light-emitting diodes (LEDs). A novel LED-powered collimating backlight is presented here, for uniformly illuminating 0.25'-diagonal miniature liquid- crystal displays, which are a burgeoning market for pagers, cellular phones, digital cameras, camcorders, and virtual- reality displays. The backlight lens consists of a central dual-asphere refracting section and an outer TIR section, properly curved with a curved exit face.

  15. Colorimetric characterization of LED luminaires

    International Nuclear Information System (INIS)

    Costa, C L M; Vieira, R R; Pereira, R C; Silva, P V M; Oliveira, I A A; Sardinha, A S; Viana, D D; Barbosa, A H; Souza, L P; Alvarenga, A D

    2015-01-01

    The Optical Metrology Division of Inmetro – National Institute of Metrology, Quality and Technology has recently started the colorimetric characterization of lamps by implementing Correlated Color Temperature (CCT) and Color Rendering Index (CRI) measurements of incandescent lamps, followed by the CFL, and LED lamps and luminaires. Here we present the results for the verification of the color characterization of samples of SSL luminaires for public as well as indoor illumination that are sold in Brazil

  16. Celebrity-led development organisations

    DEFF Research Database (Denmark)

    Budabin, Alexandra Cosima; Rasmussen, Louise Mubanda; Richey, Lisa Ann

    2017-01-01

    The past decade has seen a frontier open up in international development engagement with the entrance of new actors such as celebrity-led organisations. We explore how such organisations earn legitimacy with a focus on Madonna’s Raising Malawi and Ben Affleck’s Eastern Congo Initiative. The study...... for funding, endorsements, and expertise. We argue that the ways in which celebrity-led organisations establish themselves as legitimate development actors illustrate broader dynamics of the machinery of development.......The past decade has seen a frontier open up in international development engagement with the entrance of new actors such as celebrity-led organisations. We explore how such organisations earn legitimacy with a focus on Madonna’s Raising Malawi and Ben Affleck’s Eastern Congo Initiative. The study...... draws from organisational materials, interviews, mainstream news coverage, and the texts of the celebrities themselves to investigate the construction of authenticity, credibility, and accountability. We find these organisations earn legitimacy and flourish rapidly amid supportive elite networks...

  17. Different continuous cropping spans significantly affect microbial community membership and structure in a vanilla-grown soil as revealed by deep pyrosequencing.

    Science.gov (United States)

    Xiong, Wu; Zhao, Qingyun; Zhao, Jun; Xun, Weibing; Li, Rong; Zhang, Ruifu; Wu, Huasong; Shen, Qirong

    2015-07-01

    In the present study, soil bacterial and fungal communities across vanilla continuous cropping time-series fields were assessed through deep pyrosequencing of 16S ribosomal RNA (rRNA) genes and internal transcribed spacer (ITS) regions. The results demonstrated that the long-term monoculture of vanilla significantly altered soil microbial communities. Soil fungal diversity index increased with consecutive cropping years, whereas soil bacterial diversity was relatively stable. Bray-Curtis dissimilarity cluster and UniFrac-weighted principal coordinate analysis (PCoA) revealed that monoculture time was the major determinant for fungal community structure, but not for bacterial community structure. The relative abundances (RAs) of the Firmicutes, Actinobacteria, Bacteroidetes, and Basidiomycota phyla were depleted along the years of vanilla monoculture. Pearson correlations at the phyla level demonstrated that Actinobacteria, Armatimonadetes, Bacteroidetes, Verrucomicrobia, and Firmicutes had significant negative correlations with vanilla disease index (DI), while no significant correlation for fungal phyla was observed. In addition, the amount of the pathogen Fusarium oxysporum accumulated with increasing years and was significantly positively correlated with vanilla DI. By contrast, the abundance of beneficial bacteria, including Bradyrhizobium and Bacillus, significantly decreased over time. In sum, soil weakness and vanilla stem wilt disease after long-term continuous cropping can be attributed to the alteration of the soil microbial community membership and structure, i.e., the reduction of the beneficial microbes and the accumulation of the fungal pathogen.

  18. Structural analysis of ELO-GaN grown on a sapphire substrate as the underlying layer of a GaN-based laser diode

    Energy Technology Data Exchange (ETDEWEB)

    Miyajima, Takao; Hino, Tomonori; Narui, Hironobu [Materials Laboratories, Sony Corporation, 4-14-1 Asahi, Atsugi, Kanagawa 243-0014 (Japan); Takeda, Shingo; Tsusaka, Yoshiyuki; Matsui, Junji [Graduate School of Material Science, University of Hyogo, 3-2-1 Kouto, Kamigori-cho, Hyogo (Japan); Kudo, Yoshihiro; Tomiya, Shigetaka [Materials Analysis Lab., Sony Corporation, 4-16-1 Okada, Atsugi, Kanagawa 243-0021 (Japan); Goto, Shu; Ikeda, Masao [Shiroishi Laser Ctr., Semiconductor Laser Div., Sony Corp., 3-53-2 Shiratori, Shiroishi, Miyagi 989-0734 (Japan)

    2007-01-15

    Using micro-beam X-ray diffraction (XRD), small c-axis tilting was observed in maskless epitaxially laterally overgrown GaN (ELO-GaN), which is a suitable underlying layer for realizing a reliable GaN-based blue-violet laser diode. By analyzing the micro-scale structure of ELO-GaN without coalescence and the ambient-temperature dependence of the tilting angle, we conclude that the small c-axis tilting is caused by compressive stress in the seed region of ELO-GaN. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Structural, optical and electrical properties of CuIn{sub 5}S{sub 8} thin films grown by thermal evaporation method

    Energy Technology Data Exchange (ETDEWEB)

    Gannouni, M., E-mail: gm_mounir@yahoo.fr [Laboratoire de Photovoltaique et Materiaux Semi-conducteurs -ENIT BP 37, Le belvedere 1002-Tunis (Tunisia); Kanzari, M. [Laboratoire de Photovoltaique et Materiaux Semi-conducteurs -ENIT BP 37, Le belvedere 1002-Tunis (Tunisia)

    2011-05-19

    Highlights: > In this work, thin films of CuIn{sub 5}S{sub 8} were successfully deposited onto glass substrates by thermal evaporation and annealed in air. > Post-depositional annealing effects on structural, optical and electrical properties of thermal evaporated CuIn{sub 5}S{sub 8} thin films were studied. > The results reported in this work make this material attractive as an absorber material in solar cells applications. - Abstract: Stoichiometric compound of copper indium sulfur (CuIn{sub 5}S{sub 8}) was synthesized by direct reaction of high purity elemental copper, indium and sulfur in an evacuated quartz tube. The phase structure of the synthesized material revealed the cubic spinel structure. The lattice parameter (a) of single crystals was calculated to be 10.667 A. Thin films of CuIn{sub 5}S{sub 8} were deposited onto glass substrates under the pressure of 10{sup -6} Torr using thermal evaporation technique. CuIn{sub 5}S{sub 8} thin films were then thermally annealed in air from 100 to 300 deg. C for 2 h. The effects of thermal annealing on their physico-chemical properties were investigated using X-ray diffraction (XRD), Energy-dispersive X-ray spectroscopy (EDX), scanning electron microscope (SEM), optical transmission and hot probe method. XRD studies of CuIn{sub 5}S{sub 8} thin films showed that as-deposited films were amorphous in nature and transformed into polycrystalline spinel structure with strong preferred orientation along the (3 1 1) plane after the annealing at 200 deg. C. The composition is greatly affected by thermal treatment. From the optical transmission and reflection, an important absorption coefficient exceeds 10{sup 4} cm{sup -1} was found. As increasing the annealing temperature, the optical energy band gap decreases from 1.83 eV for the as-deposited films to 1.43 eV for the annealed films at 300 deg. C. It was found that CuIn{sub 5}S{sub 8} thin film is an n-type semiconductor at 300 deg. C.

  20. Are nurse-led chemotherapy clinics really nurse-led? An ethnographic study.

    Science.gov (United States)

    Farrell, Carole; Walshe, Catherine; Molassiotis, Alex

    2017-04-01

    The number of patients requiring ambulatory chemotherapy is increasing year on year, creating problems with capacity in outpatient clinics and chemotherapy units. Although nurse-led chemotherapy clinics have been set up to address this, there is a lack of evaluation of their effectiveness. Despite a rapid expansion in the development of nursing roles and responsibilities in oncology, there is little understanding of the operational aspects of nurses' roles in nurse-led clinics. To explore nurses' roles within nurse-led chemotherapy clinics. A focused ethnographic study of nurses' roles in nurse-led chemotherapy clinics, including semi-structured interviews with nurses. Four chemotherapy units/cancer centres in the UK PARTICIPANTS: Purposive sampling was used to select four cancer centres/units in different geographical areas within the UK operating nurse-led chemotherapy clinics. Participants were 13 nurses working within nurse-led chemotherapy clinics at the chosen locations. Non-participant observation of nurse-led chemotherapy clinics, semi-structured interviews with nurse participants, review of clinic protocols and associated documentation. 61 nurse-patient consultations were observed with 13 nurses; of these 13, interviews were conducted with 11 nurses. Despite similarities in clinical skills training and prescribing, there were great disparities between clinics run by chemotherapy nurses and those run by advanced nurse practitioners. This included the number of patients seen within each clinic, operational aspects, nurses' autonomy, scope of practice and clinical decision-making abilities. The differences highlighted four different levels of nurse-led chemotherapy clinics, based on nurses' autonomy and scope of clinical practice. However, this was heavily influenced by medical consultants. Several nurses perceived they were undertaking holistic assessments, however they were using medical models/consultation styles, indicating medicalization of nurses' roles

  1. Diversity and structure of landraces of Agave grown for spirits under traditional agriculture: A comparison with wild populations of A. angustifolia (Agavaceae) and commercial plantations of A. tequilana.

    Science.gov (United States)

    Vargas-Ponce, Ofelia; Zizumbo-Villarreal, Daniel; Martínez-Castillo, Jaime; Coello-Coello, Julián; Colunga-Garcíamarín, Patricia

    2009-02-01

    Traditional farming communities frequently maintain high levels of agrobiodiversity, so understanding their agricultural practices is a priority for biodiversity conservation. The cultural origin of agave spirits (mezcals) from west-central Mexico is in the southern part of the state of Jalisco where traditional farmers cultivate more than 20 landraces of Agave angustifolia Haw. in agroecosystems that include in situ management of wild populations. These systems, rooted in a 9000-year-old tradition of using agaves as food in Mesoamerica, are endangered by the expansion of commercial monoculture plantations of the blue agave variety (A. tequilana Weber var. Azul), the only agave certified for sale as tequila, the best-known mezcal. Using intersimple sequence repeats and Bayesian estimators of diversity and structure, we found that A. angustifolia traditional landraces had a genetic diversity (H(BT) = 0.442) similar to its wild populations (H(BT) = 0.428) and a higher genetic structure ((B) = 0.405; (B) =0. 212). In contrast, the genetic diversity in the blue agave commercial system (H(B) = 0.118) was 73% lower. Changes to agave spirits certification laws to allow the conservation of current genetic, ecological and cultural diversity can play a key role in the preservation of the traditional agroecosystems.

  2. Effect of thickness on the structural and optical properties of CuO thin films grown by successive ionic layer adsorption and reaction

    Energy Technology Data Exchange (ETDEWEB)

    Akaltun, Yunus, E-mail: yakaltun@erzincan.edu.tr

    2015-11-02

    CuO thin films were synthesised on glass substrates at room temperature using successive ionic layer adsorption and reaction (SILAR) method. The effect of film thickness on characteristic parameters such as the structural, morphological and optical properties of the films was investigated. The X-ray diffraction (XRD) and scanning electron microscopy (SEM) studies showed that all of the films exhibited polycrystalline structure with monoclinic phases and covered the glass substrates well. The crystalline and morphology of the films improved with increasing film thickness. The optical band gap decreased from 2.03 to 1.79 eV depending on the film thickness. The refractive index (n), electron effective mass (m{sub e}{sup ⁎}/m{sub o}) and static and frequency dielectric constants (ε{sub o}, ε{sub ∞}) were determined using the energy band gap values. - Highlights: • CuO thin films were deposited using SILAR method. • The electron effective mass, refractive index, dielectric constant values were calculated. • Characterisation of the films has been performed using XRD, SEM, Raman and optical measurements. • The d values of the planes of with thickness show no variation.

  3. Effect of thickness on the structural and optical properties of CuO thin films grown by successive ionic layer adsorption and reaction

    International Nuclear Information System (INIS)

    Akaltun, Yunus

    2015-01-01

    CuO thin films were synthesised on glass substrates at room temperature using successive ionic layer adsorption and reaction (SILAR) method. The effect of film thickness on characteristic parameters such as the structural, morphological and optical properties of the films was investigated. The X-ray diffraction (XRD) and scanning electron microscopy (SEM) studies showed that all of the films exhibited polycrystalline structure with monoclinic phases and covered the glass substrates well. The crystalline and morphology of the films improved with increasing film thickness. The optical band gap decreased from 2.03 to 1.79 eV depending on the film thickness. The refractive index (n), electron effective mass (m_e"⁎/m_o) and static and frequency dielectric constants (ε_o, ε_∞) were determined using the energy band gap values. - Highlights: • CuO thin films were deposited using SILAR method. • The electron effective mass, refractive index, dielectric constant values were calculated. • Characterisation of the films has been performed using XRD, SEM, Raman and optical measurements. • The d values of the planes of with thickness show no variation.

  4. Terpenoid Composition and Base Sequences of Ligularia virgaurea (Asteraceae) Grown in the Hengduan Mountain Area in China and a Comment on Drawing Structures.

    Science.gov (United States)

    Tori, Motoo

    2016-01-01

    A chemical analysis of 30 samples of Ligularia virgaurea (Asteraceae) collected in Sichuan province and its adjacent territories in China was reviewed. These samples afforded 146 compounds, 73 of which were novel, and the chemical constituents were classified into 8 categories: (1) simple eremophilanes (without ring C) and eudesmanes including nor-derivatives, (2) furanoeremophilanes and lactones with a 1(10)-saturated bond, (3) furanoeremophilanes and lactones with a 1(10)-unsaturated bond, 1,10-epoxide, or 10-ol, (4) furanoeremophilanes and lactones with 1(10)-en-2-one, 1(10)-en-2-ol, or 1-en-3-one, (5) furanoeremophilanes and lactones with 1(10)-en-9-one, 1(10)-en-9-ol, or 1,10-epoxy-9-one, (6) cacalol and their derivatives, (7) bakkanes and their derivatives, and (8) others, as shown in Tables 1-7. In these studies, five chemotypes were identified in addition to three clades from the DNA sequences of L. virgaurea. The structural determination of some compounds was also discussed and a comment on how to express the real structure was proposed, particularly for spiro compounds.

  5. Effects of Doping with Al, Ga, and In on Structural and Optical Properties of ZnO Nanorods Grown by Hydrothermal Method

    International Nuclear Information System (INIS)

    Kim, Soaram; Nam, Giwoong; Park, Hyunggil; Yoon, Hyunsik; Leem, Jaeyoung; Lee, Sangheon; Kim, Jong Su; Kim, Jin Soo; Kim, Do Yeob; Kim, Sungo

    2013-01-01

    The structural and optical properties of the ZnO, Al-doped ZnO, Ga-doped ZnO, and In-doped ZnO nanorods were investigated using field-emission scanning electron microscopy, X-ray diffraction, photoluminescence (PL) and ultraviolet-visible spectroscopy. All the nanorods grew with good alignment on the ZnO seed layers and the ZnO nanorod dimensions could be controlled by the addition of the various dopants. For instance, the diameter of the nanorods decreased with increasing atomic number of the dopants. The ratio between the near-band-edge emission (NBE) and the deep-level emission (DLE) intensities (I NBE /I DLE ) obtained by PL gradually decreased because the DLE intensity from the nanorods gradually increased with increase in the atomic number of the dopants. We found that the dopants affected the structural and optical properties of the ZnO nanorods including their dimensions, lattice constants, residual stresses, bond lengths, PL properties, transmittance values, optical band gaps, and Urbach energies

  6. Effects of Doping with Al, Ga, and In on Structural and Optical Properties of ZnO Nanorods Grown by Hydrothermal Method

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Soaram; Nam, Giwoong; Park, Hyunggil; Yoon, Hyunsik; Leem, Jaeyoung [Inje Univ., Gimhae (Korea, Republic of); Lee, Sangheon; Kim, Jong Su [Yeungnam Univ., Gyeongsan (Korea, Republic of); Kim, Jin Soo [Chonbuk National Univ., Jeonju (Korea, Republic of); Kim, Do Yeob; Kim, Sungo [Clemson Univ., Clemson (United States)

    2013-04-15

    The structural and optical properties of the ZnO, Al-doped ZnO, Ga-doped ZnO, and In-doped ZnO nanorods were investigated using field-emission scanning electron microscopy, X-ray diffraction, photoluminescence (PL) and ultraviolet-visible spectroscopy. All the nanorods grew with good alignment on the ZnO seed layers and the ZnO nanorod dimensions could be controlled by the addition of the various dopants. For instance, the diameter of the nanorods decreased with increasing atomic number of the dopants. The ratio between the near-band-edge emission (NBE) and the deep-level emission (DLE) intensities (I{sub NBE}/I{sub DLE}) obtained by PL gradually decreased because the DLE intensity from the nanorods gradually increased with increase in the atomic number of the dopants. We found that the dopants affected the structural and optical properties of the ZnO nanorods including their dimensions, lattice constants, residual stresses, bond lengths, PL properties, transmittance values, optical band gaps, and Urbach energies.

  7. Crack-free AlGaN-based UV LED on Si(111) substrate

    Energy Technology Data Exchange (ETDEWEB)

    Saengkaew, P.; Dadgar, A.; Blaesing, J.; Witte, H.; Mueller, M.; Guenther, K.M.; Fey, T.; Bastek, B.; Bertram, F.; Kurnatowski, M. von; Wieneke, M.; Hempel, T.; Veit, P.; Clos, R.; Christen, J.; Krost, A. [FNW/IEP/AHE Otto-von-Guericke-Universitaet Magdeburg (Germany)

    2010-07-01

    To achieve low-cost UV LEDs on large-diameter substrates it is a very interesting approach to grow AlGaN on low-cost Si substrates. Here, AlGaN layers and AlGaN LED structures grown on Si(111) were additionally monitored by in-situ curvature measurements. They show that with the insertion of AlN-based SL buffer layers and LT-AlN interlayers, the AlGaN layers are under compressive stress during growth enabling to compensate tensile stress after cooling. To characterize the crystalline quality, HR-XRD measurements were performed. Cross-sectional TEM to investigate dislocation propagation and annihilation. n- and p- conductivities were achieved by Si and Mg doping of the layers, respectively. By C-V and Hall-effect measurements, the maximum free-electron concentration of 2.6{sup +18} cm{sup -3} and free-hole concentration of 2.4{sup +17} cm{sup -3} by using a structure of Mg-doped GaN/Al{sub 0.1}Ga{sub 0.9}N multilayers for the latter were determined. A GaN/Al{sub 0.1}Ga{sub 0.9}N MQW structure showed near UV-luminescence around 350-360 nm. The optical and electrical properties of AlGaN-based LED samples were further characterized by I-V, EL, PL and CL measurements. The I-V measurements show forward-diode characteristics with turn-on voltage about 2.6-3.1 V.

  8. PV power system using hybrid converter for LED indictor applications

    International Nuclear Information System (INIS)

    Tseng, Sheng-Yu; Wang, Hung-Yuan; Chen, Chien-Chih

    2013-01-01

    Highlights: • This paper presents a LED indictor driving circuit with a PV arrays as its power source. • The perturb-and-observe method is adopted to extract the maximum power of PV arrays. • The proposed circuit structure has a less component counts and higher conversion efficiency. • A prototype of LED indictor driving circuit has been implemented to verify its feasibility. • The proposed hybrid converter is suitable for LED inductor applications. - Abstract: This paper presents a LED indictor driving circuit with a PV arrays as its power source. The LED indictor driving circuit includes battery charger and discharger (LED driving circuit). In this research, buck converter is used as a charger, and forward converter with active clamp circuit is adopted as a discharger to drive the LED indictor. Their circuit structures use switch integration technique to simplify them and to form the proposed hybrid converter, which has a less component counts, lighter weight, smaller size, and higher conversion efficiency. Moreover, the proposed hybrid converter uses a perturb-and-observe method to extract the maximum power from PV arrays. Finally, a prototype of an LED indictor driving circuit with output voltage of 10 V and output power of 20 W has been implemented to verify its feasibility. It is suitable for the LED inductor applications

  9. Structural and dielectric properties of Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} thin films grown by PLD

    Energy Technology Data Exchange (ETDEWEB)

    James, K. K.; Satish, B.; Jayaraj, M. K. [Nanophotonic and Optoelectronic Devices Laboratory, Department of Physics, Cochin University of Science and Technology, Kerala (India)

    2014-01-28

    Ferroelectric thin films of Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} (BST) were deposited on Si/SiO{sub 2}/TiO{sub 2}/Pt (PtSi) substrate by pulsed laser deposition (PLD). Crystalline films with perovskite structure were obtained without post-deposition annealing. Phase purity of the deposited films was confirmed by x-ray diffraction. The lowest value of FWHM obtained for the film deposited at oxygen pressure 5.4×10{sup −4} mbar and substrate temperature 600°C, indicates the high crystallinity of the film. The room temperature dielectric constant at 100 kHz was 85. Butterfly loop, which is the characteristic of ferroelectric materials, was obtained in the regime of −4 to +4V. The leakage current density was nearly 9×10{sup −13} Acm{sup −2}.

  10. Hydroxyapatite growth on multiwall carbon nanotubes grown on titanium fibers from a titanium sheet

    KAUST Repository

    Chetibi, Loubna

    2013-09-27

    Nano-hydroxyapatite (HA) was grown on functionalized multiwalled carbon nanotubes (MWCNTs) deposited on TiO2 nanofibers (NFs) that were hydrothermally grown on Ti metal sheets. The HA was electrochemically grown on the MWCNTs/TiO2 porous layer. It was found that the HA grows on the MWCNTs/TiO2 NFs in the form of dense coating with nanorice grain-shaped. The incorporation of MWCNTs between HA and TiO2 NFs has led to higher adhesion strength as measured by micro-scratching test indicating the benefit of MWCNTs on the improving the bonding strength of HA layer. The obtained coatings exhibit excellent corrosion resistance in simulated body fluid. It is expected that this simple route for preparing the new HA/MWCNTs/TiO2/Ti-layered structure might be used not only in the biomedical field, but also in catalysis and biological sensing among others. © 2013 Springer Science+Business Media New York.

  11. Hydroxyapatite growth on multiwall carbon nanotubes grown on titanium fibers from a titanium sheet

    KAUST Repository

    Chetibi, Loubna; Achour, Amine; Peszke, Jerzy; Hamana, Djamel; Achour, Slimane

    2013-01-01

    Nano-hydroxyapatite (HA) was grown on functionalized multiwalled carbon nanotubes (MWCNTs) deposited on TiO2 nanofibers (NFs) that were hydrothermally grown on Ti metal sheets. The HA was electrochemically grown on the MWCNTs/TiO2 porous layer. It was found that the HA grows on the MWCNTs/TiO2 NFs in the form of dense coating with nanorice grain-shaped. The incorporation of MWCNTs between HA and TiO2 NFs has led to higher adhesion strength as measured by micro-scratching test indicating the benefit of MWCNTs on the improving the bonding strength of HA layer. The obtained coatings exhibit excellent corrosion resistance in simulated body fluid. It is expected that this simple route for preparing the new HA/MWCNTs/TiO2/Ti-layered structure might be used not only in the biomedical field, but also in catalysis and biological sensing among others. © 2013 Springer Science+Business Media New York.

  12. Position-controlled MOVPE growth and electro-optical characterization of core-shell InGaN/GaN microrod LEDs

    Science.gov (United States)

    Schimpke, Tilman; Lugauer, H.-J.; Avramescu, A.; Varghese, T.; Koller, A.; Hartmann, J.; Ledig, J.; Waag, A.; Strassburg, M.

    2016-03-01

    Today's InGaN-based white LEDs still suffer from a significant efficiency reduction at elevated current densities, the so-called "Droop". Core-shell microrods, with quantum wells (QWs) covering their entire surface, enable a tremendous increase in active area scaling with the rod's aspect ratio. Enlarging the active area on a given footprint area is a viable and cost effective route to mitigate the droop by effectively reducing the local current density. Microrods were grown in a large volume metal-organic vapor phase epitaxy (MOVPE) reactor on GaN-on-sapphire substrates with a thin, patterned SiO2 mask for position control. Out of the mask openings, pencil-shaped n-doped GaN microrod cores were grown under conditions favoring 3D growth. In a second growth step, these cores are covered with a shell containing a quantum well and a p-n junction to form LED structures. The emission from the QWs on the different facets was studied using resonant temperature-dependent photoluminescence (PL) and cathodoluminescence (CL) measurements. The crystal quality of the structures was investigated by transmission electron microscopy (TEM) showing the absence of extended defects like threading dislocations in the 3D core. In order to fabricate LED chips, dedicated processes were developed to accommodate for the special requirements of the 3D geometry. The electrical and optical properties of ensembles of tens of thousands microrods connected in parallel are discussed.

  13. Crystallographic tilt and in-plane anisotropies of an a-plane InGaN/GaN layered structure grown by MOCVD on r-plane sapphire using a ZnO buffer

    International Nuclear Information System (INIS)

    Liu, H F; Chi, D Z; Liu, W; Guo, S

    2016-01-01

    High-resolution x-ray diffraction (HRXRD) was used to investigate the crystallographic tilts and structural anisotropies in epitaxial nonpolar a-plane InGaN/GaN grown by metal–organic chemical vapor deposition on r-plane sapphire using a ZnO buffer. The substrate had an unintentional miscut of 0.14° towards its [–4 2 2 3] axis. However, HRXRD revealed a tilt of 0.26° (0.20°) between the ZnO (GaN) (11-20) and the Al 2 O 3 (1-102) atomic planes, with the (11-20) axis of ZnO (GaN) tilted towards its c-axis, which has a difference of 163° in azimuth from that of the substrate’s miscut. Excess broadenings in the GaN/ZnO (11-20) rocking curves (RCs) were observed along its c-axis. Specific analyses revealed that partial dislocations and anisotropic in-plane strains, rather than surface-related effects, wafer curvature or stacking faults, are the dominant factors for the structural anisotropy. The orientation of the partial dislocations is most likely affected by the miscut of the substrate, e.g. via tilting of the misfit dislocation gliding planes created during island coalescences. Their Burgers vector components in the growth direction, in turn, gave rise to crystallographic tilts in the same direction as that of the excess RC-broadenings. (paper)

  14. Crystallographic tilt and in-plane anisotropies of an a-plane InGaN/GaN layered structure grown by MOCVD on r-plane sapphire using a ZnO buffer

    Science.gov (United States)

    Liu, H. F.; Liu, W.; Guo, S.; Chi, D. Z.

    2016-03-01

    High-resolution x-ray diffraction (HRXRD) was used to investigate the crystallographic tilts and structural anisotropies in epitaxial nonpolar a-plane InGaN/GaN grown by metal-organic chemical vapor deposition on r-plane sapphire using a ZnO buffer. The substrate had an unintentional miscut of 0.14° towards its [-4 2 2 3] axis. However, HRXRD revealed a tilt of 0.26° (0.20°) between the ZnO (GaN) (11-20) and the Al2O3 (1-102) atomic planes, with the (11-20) axis of ZnO (GaN) tilted towards its c-axis, which has a difference of 163° in azimuth from that of the substrate’s miscut. Excess broadenings in the GaN/ZnO (11-20) rocking curves (RCs) were observed along its c-axis. Specific analyses revealed that partial dislocations and anisotropic in-plane strains, rather than surface-related effects, wafer curvature or stacking faults, are the dominant factors for the structural anisotropy. The orientation of the partial dislocations is most likely affected by the miscut of the substrate, e.g. via tilting of the misfit dislocation gliding planes created during island coalescences. Their Burgers vector components in the growth direction, in turn, gave rise to crystallographic tilts in the same direction as that of the excess RC-broadenings.

  15. Fluorescence extended X-ray absorption fine structure analysis of half-metallic ferromagnet 'zinc-blende CrAs' grown on GaAs by molecular beam epitaxy

    CERN Document Server

    Ofuchi, H; Ono, K; Oshima, M; Akinaga, H; Manago, T

    2003-01-01

    In this work, geometric structures for a half-metallic ferromagnet 'zinc-blende CrAs', which showed ferromagnetic behavior beyond room temperature, were investigated using fluorescence extended X-ray absorption fine structure (EXAFS) measurement. The EXAFS measurements revealed that As atoms around Cr atoms in the 2 nm CrAs film grown on a GaAs(0 0 1) substrate were coordinated tetrahedrally, indicating formation of zinc-blende CrAs. The Cr-As bond length in the zinc-blende CrAs is 2.49 A. This value is close to that which was estimated from the lattice constant (5.82 A) of ferromagnetic zinc-blende CrAs calculated by full-potential linearized augmented-plane wave method. The EXAFS analysis show that the theoretically predicted zinc-blende CrAs can be fabricated on GaAs(0 0 1) substrate by low-temperature molecular-beam epitaxy.

  16. Fluorescence extended X-ray absorption fine structure analysis of half-metallic ferromagnet 'zinc-blende CrAs' grown on GaAs by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Ofuchi, H.; Mizuguchi, M.; Ono, K.; Oshima, M.; Akinaga, H.; Manago, T.

    2003-01-01

    In this work, geometric structures for a half-metallic ferromagnet 'zinc-blende CrAs', which showed ferromagnetic behavior beyond room temperature, were investigated using fluorescence extended X-ray absorption fine structure (EXAFS) measurement. The EXAFS measurements revealed that As atoms around Cr atoms in the 2 nm CrAs film grown on a GaAs(0 0 1) substrate were coordinated tetrahedrally, indicating formation of zinc-blende CrAs. The Cr-As bond length in the zinc-blende CrAs is 2.49 A. This value is close to that which was estimated from the lattice constant (5.82 A) of ferromagnetic zinc-blende CrAs calculated by full-potential linearized augmented-plane wave method. The EXAFS analysis show that the theoretically predicted zinc-blende CrAs can be fabricated on GaAs(0 0 1) substrate by low-temperature molecular-beam epitaxy

  17. Enhancement of Two-Dimensional Electron-Gas Properties by Zn Polar ZnMgO/MgO/ZnO Structure Grown by Radical-Source Laser Molecular Beam Epitaxy

    Directory of Open Access Journals (Sweden)

    Li Meng

    2015-01-01

    Full Text Available A Zn polar ZnMgO/MgO/ZnO structure with low Mg composition Zn1-xMgxO layer (x = 0.05 grown on a-plane (11–20 sapphire by radical-source laser molecular beam epitaxy was reported. The insertion of a thin (1 nm MgO layer between ZnMgO and ZnO layers in the ZnMgO/ZnO 2DEG structures results in an increase of 2DEG sheet density and affects electron mobility slightly. The carrier concentration reached a value as high as 1.1 × 1013 cm−2, which was confirmed by C-V measurements. A high Hall mobility of 3090 cm2/Vs at 10 K and 332 cm2/Vs at RT was observed from Zn0.95Mg0.05O/MgO/ZnO heterostructure. The choice of the thickness of MgO was discussed. The dependence of carrier sheet density of 2DEG on ZnMgO layer thickness was calculated in theory and the theoretical prediction and experimental results agreed well.

  18. Effects of thermal annealing on the optical, spectroscopic, and structural properties of tris (8-hydroxyquinolinate) gallium films grown on quartz substrates

    Energy Technology Data Exchange (ETDEWEB)

    Muhammad, Fahmi Fariq, E-mail: fahmi982@gmail.com [Low Dimensional Materials Research Center, Department of Physics, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia); Department of Physics, Faculty of Science and Engineering, University of Koya, Koya, Kurdistan Region (Iraq); Sulaiman, Khaulah [Low Dimensional Materials Research Center, Department of Physics, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia)

    2011-10-03

    Highlights: {yields} Achieving a broad absorption band for Gaq3 covering the whole UV and some parts of visible spectra. {yields} Increasing photoluminescence emission to five times stronger than that of pristine film. {yields} Conformational changes towards the formation of crystalline {alpha}-Gaq3 polymorph. {yields} Determination of glass transition temperature for Gaq3 (T{sub g} 182 deg. C) and Alq3 (T{sub g} = 173 deg. C). {yields} Improving and understanding the physical properties of Gaq3 film by means of thermal treatment. - Abstract: In this study we report the optical, spectroscopic, and structural properties of vacuum deposited tris (8-hydroxyquinolinate) gallium film upon thermal annealing in the temperature range from 85 deg. C to 255 deg. C under a flowing nitrogen gas for 10 min. The optical UV-vis-NIR and luminescence spectroscopy measurements were performed to estimate the absorption bands, optical energy gap (E{sub g}), and photoluminescence (PL) of the films. Fourier transform infrared (FTIR) spectroscopy and X-ray diffraction (XRD) techniques were used to probe the spectroscopic and structural nature of the films. We show that, by annealing the films from 85 deg. C to 235 deg. C, it is possible to achieve an enhanced absorption and increased photoluminescence to five times stronger than that of the pristine film. The PL quenching at 255 deg. C was attributed to the presence of plainer chains allow easy going for excitons to a long distance due to the crystalline region formation of {alpha}-Gaq3 polymorph. The reduction in E{sub g} and infrared absorption bands upon annealing were referred to the enhancement in {pi}-{pi} interchain interaction and conformational changes by re-arrangement of the Gaq3 quinolinate ligands, respectively. Stokes shift for the films were observed and calculated. From the differential scanning calorimetry, DSC measurements, higher glass transition temperature was observed for Gaq3 (T{sub g} = 182 deg. C) compared to

  19. Enhanced photoelectrochemical activity of electro-synthesized CdS-Bi2S3 composite films grown with self-designed cross-linked structure

    International Nuclear Information System (INIS)

    Jana, A.; Bhattacharya, C.; Datta, J.

    2010-01-01

    In the present investigation thin semiconductor films of CdS, Bi 2 S 3 and their intermixed composite films have been electro-synthesized onto conducting glass substrate from nonaqueous bath containing various levels of the precursor salts of Cd 2+ and Bi 3+ . Spectrophotometric measurements determine the band gap energies of the composite films at ∼2.53 eV and ∼1.37 eV corresponding to the binary systems CdS and Bi 2 S 3 , respectively. The film matrices exhibit a unique structure of cross-linked nanoporous Bi 2 S 3 mesh containing spherical shaped CdS crystals distributed uniformly on the top of the surface as detected from the morphological studies through scanning electron microscopy and transmission electron microscopy. X-ray diffraction studies show crystalline structure of the films of which the chemical compositions were determined through energy dispersive analysis of X-ray. The film matrices enriched with Cd exhibit high dielectric property as obtained from the capacitance measurement and substantial thermal stability derived from thermogravimetry and differential thermal analysis. These films are found to be highly fluorescent in nature when subjected to spectrofluorimetric analysis. The Raman spectral data exhibit characteristic peaks that are associated with Cd-S and Bi-S bonds as well as the defects created by metal oxides. The spectrum also demonstrates that the changes in the relative position of the overtone bands are associated with compositional variation of the film surface. The study of electrochemical polarization of different films, derives the inherent stability of the matrices towards dissolution. This was followed by anodic stripping voltammetry to estimate the dissolved cations during polarization. Photoelectrochemical measurements demonstrate n-type semiconductivity of the films with high order of donor density and reasonable photoactivity under illuminated condition. It may be summarized that the blended intermix of CdS-Bi 2 S 3

  20. Magnetotransport, structural and optical characterization of p-type modulation doped heterostructures with high Ge content Si1-xGex channel grown by SS-MBE on Si1-yGey/Si(001) virtual substrates

    International Nuclear Information System (INIS)

    Myronov, M.

    2001-04-01

    This thesis is a report on experimental investigations of magnetotransport, structural and optical properties of p-type modulation doped (MOD) heterostructures with Si 1-x Ge x channel of high Ge content (0.6 1-y Ge y /Si(001) virtual substrate (VS). The active layers of MOD heterostructures were grown by solid source molecular beam epitaxy (SS-MBE). The VSs were grown either by SS-MBE or low-pressure chemical vapour deposition (LP-CVD). The influence of thermal annealing on magnetotransport, structural and optical properties of Si 1-x Ge x /Si 1-y Ge y heterostructures was studied by performing the post growth furnace thermal annealing (FTA) treatments in the temperature range of 600-900C for 30min and rapid thermal annealing (RTA) treatments at temperature 750C for 30sec. Structural and optical analysis of p-type MOD Si 1-x Ge x /Si 1-y Ge y heterostructures involved the techniques of cross-sectional transmission electron microscopy, ultra low energy secondary ion mass spectrometry, photoluminescence spectroscopy, micro-Raman spectroscopy and scanning white-light interferometry. From the combinations of experimental results obtained by these techniques the Ge composition in the SiGe heteroepilayers, their thicknesses, state of strain in the heteroepilayers and dislocations microstructure in VSs were obtained. After post growth thermal annealing treatments were observed broadening of the Si 1-x Ge x channel accompanied with the reduction of Ge content in the channel and smearing of Si 1-x Ge x /Si 1-y Ge y interfaces. The Si 0.7 Ge 0.3 on low-temperature Si buffer VSs with very good structural properties were designed and grown by SS-MBE. These include: relatively thin 850nm total thickness of VS, 4-6nm Peak-to-Valley values of surface roughness, less than 10 5 cm -2 threading dislocations density and more than 95% degree of relaxation in the top layers of VS. The Hall mobility and sheet carrier density of as-grown and annealed p-type MOD Si 1-x Ge x /Si 1-y Ge y

  1. Effect of applied voltage on the structural properties of SnO2 nanostuctures grown on indium-tin-oxide coated glass substrates.

    Science.gov (United States)

    Lee, Dea Uk; Yun, Dong Yeol; No, Young Soo; Hwang, Jun Ho; Lee, Chang Hun; Kim, Tae Whan

    2013-11-01

    SnO2 nanostuctures were formed on indium-tin-oxide (ITO)-coated glass substrates by using an electrochemical deposition (ECD) method. X-ray photoelectron spectroscopy (XPS) spectra showed the existence of elemental Sn and O in the samples, indicative of the formation of SnO2 materials. An XPS spectrum showing the O 1s peak at a binding energy of 531.5 eV indicated that the oxygen atoms were bonded to the SnO2. Field-emission scanning electron microscopy (FE-SEM) images showed that the samples formed by using the ECD method had SnO2 nanostructures with a size between 280 and 350 nm. FE-SEM images showed that the size of the SnO2 nanostructures formed at 65 degrees C for 30 min increased with decreasing applied voltage. X-ray diffraction (XRD) patterns showed that the SnO2 nanostrucures had tetragonal structures with cell parameters of a = 4.738 A and c = 3.187 A. XRD results showed that the peak intensity of the (110) plane increased with decreasing applied voltage, indicative of a preferencial orientation of the (110) plane.

  2. Effect of thermal annealing on the structural and optical properties of Cu2FeSnS4 thin films grown by vacuum evaporation method

    Science.gov (United States)

    Oueslati, H.; Rabeh, M. Ben; Kanzari, M.

    2018-02-01

    In this work, the effect of different types of thermal annealing on the properties of Cu2FeSnS4 (CFTS) thin films deposited by thermal evaporation at room temperature on glass substrate were investigated. CFTS powder was synthesized by direct melting of the constituent elements taken in stoichiometry compositions. The X-ray diffraction experimental data indicating that the Cu2FeSnS4 powder illustrating a stannite structure in space group I\\bar {4}2m. From the XRD analysis we have found that the polycrystalline CFTS thin film was only obtained by thermal annealed in sulfur atmosphere under a high vacuum of 400 °C temperature during 2 h. Optical study reveals that the thin films have relatively high absorption coefficients (≈ 105cm-1) and the values of optical band gap energy ranged between 1.38 and 1.48 eV. Other optical parameters were evaluated according to the models of Wemple Di-Domenico and Spitzer-Fan. Finally, hot probe measurements of CFTS thin films reveal p-type conductivity.

  3. Structural and superconducting characteristics of YBa2Cu3O7 films grown by fluorine-free metal-organic deposition route

    DEFF Research Database (Denmark)

    Zhao, Yue; Chu, Jingyuan; Qureishy, Thomas

    2018-01-01

    Microstructure and superconducting performance of YBa2Cu3O7 (YBCO) films deposited on LaAlO3 single crystal (LAO) substrates by a fluorine-free metal-organic deposition (FF-MOD) technique, have been studied by means of X-ray reciprocal space mapping (RSM), cross-sectional transmission electron mi...... external magnetic field at 77 K. This work offers an in-depth insight into the correlation between the microstructure and superconductivity in the MOD YBCO films.......Microstructure and superconducting performance of YBa2Cu3O7 (YBCO) films deposited on LaAlO3 single crystal (LAO) substrates by a fluorine-free metal-organic deposition (FF-MOD) technique, have been studied by means of X-ray reciprocal space mapping (RSM), cross-sectional transmission electron....... It is suggested that associated partial dislocations formed at the boundary between the stacking faults and YBCO matrix act as strong linear (or dot) pinning centers. These structural characteristics are well in line with the better superconducting performance of the low fluorine-MOD film, in particular under...

  4. Optical and Structural Characterization of ZnO/TiO2 Bilayer Thin Films Grown by Sol-Gel Spin Coating

    Science.gov (United States)

    Gareso, P. L.; Musfitasari; Juarlin, Eko

    2018-03-01

    Structural and optical properties of ZnO/TiO2 bilayers thin films have been investigated using x-ray diffraction (X-RD), scanning electron microscopy (SEM), and optical transmittance UV-Vis measurements. ZnO thin films were prepared by dissolving zinc acetate dehydrated into a solvent of ethanol and then added triethanolamin. In the case of TiO2 layers, tetraisoproxide was dissolved into ethanol and then added an acetate acid. The layer of ZnO was deposited first followed by TiO2 layer on a glass substrate using a spin coating technique. The ZnO/TiO2 bilayers were annealed at various temperatures from 300°C until 600°C for 60 minutes. The X-ray diffraction results show that there was an enhancement of the x-ray spectra as annealed temperature increased to 600°C in comparison to the samples that were annealed at 300°C. Based on the optical measurement of UV-Vis, the band gap energy of ZnO/TiO2 bilayer is around 3.2 eV at temperature of 300°C. This value is similar to the band gap energy of ZnO. SEM results show that there is no cluster in the surface of ZnO/TiO2 bilayer.

  5. Structure characterization of Pd/Co/Pd tri-layer films epitaxially grown on MgO single-crystal substrates

    Energy Technology Data Exchange (ETDEWEB)

    Tobari, Kousuke, E-mail: tobari@futamoto.elect.chuo-u.ac.jp; Ohtake, Mitsuru; Nagano, Katsumasa; Futamoto, Masaaki

    2011-09-30

    Pd/Co/Pd tri-layer films were prepared on MgO substrates of (001), (111), and (011) orientations at room temperature by ultra high vacuum rf magnetron sputtering. The detailed film structures around the Co/Pd and the Pd/Co interfaces are investigated by reflection high energy electron diffraction. Pd layers of (001){sub fcc}, (111){sub fcc}, and (011){sub fcc} orientations epitaxially grow on the respective MgO substrates. Strained fcc-Co(001) single-crystal layers are formed on the Pd(001){sub fcc} layers by accommodating the fairly large lattice mismatch between the Co and the Pd layers. On the Co layers,, Pd polycrystalline layers are formed. When Co films are formed on the Pd(111){sub fcc} and the Pd(011){sub fcc} layers, atomic mixing is observed around the Co/Pd interfaces and fcc-CoPd alloy phases are coexisting with Co crystals. The Co crystals formed on the Pd(111){sub fcc} layers consist of hcp(0001) + fcc(111) and Pd(111){sub fcc} epitaxial layers are formed on the Co layers. Co crystals epitaxially grow on the Pd(011){sub fcc} layers with two variants, hcp(11-bar 00) and fcc(111). On the Co layers, Pd(011){sub fcc} epitaxial layers are formed.

  6. Structure and properties of the Mn doped CeO{sub 2} thin film grown on LaAlO{sub 3} (0 0 1) via a modified sol–gel spin-coating technique

    Energy Technology Data Exchange (ETDEWEB)

    Mahmoud, Waleed E., E-mail: w_e_mahmoud@yahoo.com [King Abdulaziz University, Faculty of Science, Department of Physics, Jeddah (Saudi Arabia); Suez Canal University, Faculty of Science, Department of Physics, Ismailia (Egypt); Al-Ghamdi, A.A. [King Abdulaziz University, Faculty of Science, Department of Physics, Jeddah (Saudi Arabia); Al-Agel, F.A. [Hail University, College of Science, Department of Physics, Hail (Saudi Arabia); Al-Arfaj, E. [Umm Alqura University, Department of Physics, Makkah (Saudi Arabia); Qaseem University, Physics Department, Qaseem (Saudi Arabia); Shokr, F.S. [King Abdulaziz University, Faculty of Science & Arts, Department of Physics, Rabigh (Saudi Arabia); Al-Gahtany, S.A. [King Abdulaziz University, Faculty of Science for Girls, Department of Physics, Jeddah (Saudi Arabia); Alshahrie, Ahmed [King Abdulaziz University, Faculty of Science, Department of Physics, Jeddah (Saudi Arabia); Hafez, M. [King Abdulaziz University, Faculty of Science, Department of Physics, Jeddah (Saudi Arabia); Suez Canal University, Faculty of Science, Department of Physics, Ismailia (Egypt); Bronstein, L.M. [King Abdulaziz University, Faculty of Science, Department of Physics, Jeddah (Saudi Arabia); Indiana University, Department of Chemistry, Bloomington, IN 47405 (United States); Beall, Gary W. [King Abdulaziz University, Faculty of Science, Department of Physics, Jeddah (Saudi Arabia); Texas State University-San Marcos, Department of Chemistry and Biochemistry, 601 University Dr., San Marcos, TX 78666 (United States)

    2015-08-15

    Highlights: • Mn doped CeO{sub 2} was grown on LaAlO{sub 3} (0 0 1) via sol–gel technique. • The concentration of the Mn ions was varied from 1 to 13 at.%. • The incorporation of 7 at.% of Mn ions was found to provide formation of exceptionally smooth films. • This amount demonstrated the highest saturation magnetization of 1.75 μ{sub B}/Mn and coercive field of 487 Gauss. - Abstract: Here we report Mn doped cerium oxide films prepared on the LaAlO{sub 3} (0 0 1) substrate via an ethylene glycol modified sol–gel spin coating technique and evaluation of their properties as diluted magnetic semiconductors. Cerium oxide was selected because of its high dielectric constant and fluorite cubic structure, matching the silicon and lanthanum aluminate based electronic devices. The concentration of the Mn ions was varied from 1 to 13 at.% and the influence of this concentration on the structure, surface morphology, optical and magnetic properties of these films was studied using scanning electron microscopy, energy dispersive spectroscopy, atomic force microscopy, ellipsometric spectroscopy, X-ray powder diffraction, X-ray photoelectron spectroscopy, and magnetic measurements. The incorporation of 7 at.% of Mn ions was found to provide formation of exceptionally smooth films, demonstrating the highest saturation magnetization of 1.75 μ{sub B}/Mn and the coercive field of 487 Gauss. These properties are assigned to the conversion of Ce{sup 4+} to Ce{sup 3+} upon incorporation of Mn ions into the CeO{sub 2} structure and the oxidation of Mn{sup 2+} to Mn{sup 4+}, creating two oxygen vacancies to preserve the cubic structure of cerium oxide and promoting ferromagnetism.

  7. ZnO-nanorods: A possible white LED phosphor

    Science.gov (United States)

    Sarangi, Sachindra Nath; T., Arun; Ray, Dinseh K.; Sahoo, Pratap Kumar; Nozaki, Shinji; Sugiyama, Noriyuki; Uchida, Kazuo

    2017-05-01

    The white light-emitting diodes (LEDs) have drawn much attention to replace conventional lighting sources because of low energy consumption, high light efficiency and long lifetime. Although the most common approach to produce white light is to combine a blue LED chip and a yellow phosphor, such a white LED cannot be used for a general lighting application, which requires a broad luminescence spectrum in the visible wavelength range. We have successfully chemically synthesized the ZnO nanorods showing intense broad luminescence in the visible wavelength range and made a white LED using the ZnO nanorods as phosphor excited with a blue LED. Their lengths and diameters were 2 - 10 μm and 200 - 800 nm, respectively. The wurtzite structure was confirmed by the x-ray diffraction measurement. The PL spectrum obtained by exciting the ZnO nanorods with the He-Cd laser has two peaks, one associated with the near band-edge recombination and the other with recombination via defects. The peak intensity of the near band-edge luminescence at 388 nm is much weaker than that of the defect-related luminescence. The latter luminescence peak ranges from 450 to 850 nm and broad enough to be used as a phosphor for a white LED. A white LED has been fabricated using a blue LED with 450 nm emission and ZnO nanorod powders. The LED performances show a white light emission and the electroluminescence measurement shows a stiff increase in white light intensity with increasing blue LED current. The Commission International de1'Eclairage (CIE) chromaticity colour coordinates of 450 nm LED pumped white emission shows a coordinate of (0.31, 0.32) for white LED at 350 mA. These results indicate that ZnO nanorods provides an alternate and effective approach to achieve high-performance white LEDs and also other optoelectronic devices.

  8. Solid-State Dewetting of Gold Aggregates/Islands on TiO2 Nanorod Structures Grown by Oblique Angle Deposition.

    Science.gov (United States)

    Liu, Shizhao; Plawsky, Joel L

    2017-12-12

    A composite film made of a stable gold nanoparticle (NP) array with well-controlled separation and size atop a TiO 2 nanorod film was fabricated via the oblique angle deposition (OAD) technique. The fabrication of the NP array is based on controlled, Rayleigh-instability-induced, solid-state dewetting of as-deposited gold aggregates on the TiO 2 nanorods. It was found that the initial spacing between as-deposited gold aggregates along the vapor flux direction should be greater than the TiO 2 interrod spacing created by 80° OAD to control dewetting and produce NP arrays. A numerical investigation of the process was conducted using a phase-field modeling approach. Simulation results showed that coalescence between neighboring gold aggregates is likely to have caused the uncontrolled dewetting in the 80° deposition, and this could be circumvented if the initial spacing between gold aggregates is larger than a critical value s min . We also found that TiO 2 nanorod tips affect dewetting dynamics differently than planar TiO 2 . The topology of the tips can induce contact line pinning and an increase in the contact angle along the vapor flux direction to the supported gold aggregates. These two effects are beneficial for the fabrication of monodisperse NPs based on Rayleigh-instability-governed self-assembly of materials, as they help to circumvent the undesired coalescence and facilitate the instability growth on the supported material. The findings uncover the application potential of OAD as a new method to fabricate structured films as template substrates to mediate dewetting. The reported composite films would have uses in optical coatings and photocatalytic systems, taking advantage of their ability to combine plasmonic nanostructures within a nanostructured dielectric film.

  9. Li induced effects in the core level and π-band electronic structure of graphene grown on C-face SiC

    Energy Technology Data Exchange (ETDEWEB)

    Johansson, Leif I., E-mail: lij@ifm.liu.se; Xia, Chao; Virojanadara, Chariya [Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping (Sweden)

    2015-11-15

    Studies of the effects induced in the electronic structure after Li deposition, and subsequent heating, on graphene samples prepared on C-face SiC are reported. The as prepared graphene samples are essentially undoped, but after Li deposition, the Dirac point shifts down to 1.2 eV below the Fermi level due to electron doping. The shape of the C 1s level also indicates a doping concentration of around 10{sup 14 }cm{sup −2} after Li deposition, when compared with recent calculated results of core level spectra of graphene. The C 1s, Si 2p, and Li 1s core level results show little intercalation directly after deposition but that most of the Li has intercalated after heating at 280 °C. Heating at higher temperatures leads to desorption of Li from the sample, and at 1030 °C, Li can no longer be detected on the sample. The single π-band observable from multilayer C-face graphene samples in conventional angle resolved photoelectron spectroscopy is reasonably sharp both on the initially prepared sample and after Li deposition. After heating at 280 °C, the π-band appears more diffuse and possibly split. The Dirac point becomes located at 0.4 eV below the Fermi level, which indicates occurrence of a significant reduction in the electron doping concentration. Constant energy photoelectron distribution patterns extracted from the as prepared graphene C-face sample and also after Li deposition and heating at 280 °C look very similar to earlier calculated distribution patterns for monolayer graphene.

  10. Li induced effects in the core level and π-band electronic structure of graphene grown on C-face SiC

    International Nuclear Information System (INIS)

    Johansson, Leif I.; Xia, Chao; Virojanadara, Chariya

    2015-01-01

    Studies of the effects induced in the electronic structure after Li deposition, and subsequent heating, on graphene samples prepared on C-face SiC are reported. The as prepared graphene samples are essentially undoped, but after Li deposition, the Dirac point shifts down to 1.2 eV below the Fermi level due to electron doping. The shape of the C 1s level also indicates a doping concentration of around 10 14  cm −2 after Li deposition, when compared with recent calculated results of core level spectra of graphene. The C 1s, Si 2p, and Li 1s core level results show little intercalation directly after deposition but that most of the Li has intercalated after heating at 280 °C. Heating at higher temperatures leads to desorption of Li from the sample, and at 1030 °C, Li can no longer be detected on the sample. The single π-band observable from multilayer C-face graphene samples in conventional angle resolved photoelectron spectroscopy is reasonably sharp both on the initially prepared sample and after Li deposition. After heating at 280 °C, the π-band appears more diffuse and possibly split. The Dirac point becomes located at 0.4 eV below the Fermi level, which indicates occurrence of a significant reduction in the electron doping concentration. Constant energy photoelectron distribution patterns extracted from the as prepared graphene C-face sample and also after Li deposition and heating at 280 °C look very similar to earlier calculated distribution patterns for monolayer graphene

  11. Effects of nitrogen gas ratio on the structural and corrosion properties of ZrN thin films grown on biodegradable magnesium alloy by ion-beam sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Kiahosseini, Seyed Rahim [Islamic Azad University, Department of Engineering, Damghan Branch, Damghan (Iran, Islamic Republic of); Mojtahedzadeh Larijani, Majid [Nuclear Sciences and Technology Institute, Radiation Application Research School, Tehran (Iran, Islamic Republic of)

    2017-12-15

    Studies on the corrosion resistance of magnesium alloys, which are widely applied as biomaterials, have increased in recent years. In this work, zirconium nitride (ZrN) coatings were deposited on AZ91 magnesium alloy through ion-beam sputtering at 473 K with 0.3, 0.4, 0.5, and 0.6 nitrogen proportions [F(N{sub 2})] in ionized gas. X-ray diffraction, profilometry, hardness tests, scanning electron microscopy, and potentiodynamic polarization techniques were used to analyze the structure, thickness, adhesion, microstructure, and corrosion resistance of coated samples, respectively. Results showed that the (111) crystalline orientation dominated in all coatings. Williamson-Hall technique revealed that the crystallite size of ZrN films decreased from 73 to 20 nm with increasing F(N{sub 2}), and compressive microstrain increased from 0.004 to 0.030. Film thicknesses were inversely correlated with N{sub 2} amount and significantly decreased from 1.7 to 0.8 μm. The maximum dP/dr ratio, a dependent factor of adhesion, was 0.04 kg/cm for the film deposited under the F(N{sub 2}) value of 0.5. The corrosion potential of coated samples was not significantly different from that of uncoated AZ91. Under the F(N{sub 2}) value of 0.6, corrosion current density slightly decreased from 14 to 9.7 μA/cm{sup 2} and significantly increased to 13.5 μA/cm{sup 2}. Results indicated that ZrN film deposited under the F(N{sub 2}) value of 0.5 showed high adhesion and corrosion resistance. (orig.)

  12. Annealing temperature dependent structural and magnetic properties of MnFe{sub 2}O{sub 4} nanoparticles grown by sol-gel auto-combustion method

    Energy Technology Data Exchange (ETDEWEB)

    Bhandare, S.V. [Department of Physics, Gulbarga University, Gulbarga 585106 (India); Kumar, R.; Anupama, A.V.; Choudhary, H.K. [Materials Research Centre, Indian Institute of Science, Bangalore 560012 (India); Jali, V.M., E-mail: vmjali@gmail.com [Department of Physics, Gulbarga University, Gulbarga 585106 (India); Sahoo, B., E-mail: bsahoo@mrc.iisc.ernet.in [Materials Research Centre, Indian Institute of Science, Bangalore 560012 (India)

    2017-07-01

    Highlights: • Phase pure MnFe{sub 2}O{sub 4} samples were prepared by sol-gel auto-combustion method. • Annealing MnFe{sub 2}O{sub 4} below ∼500 °C, two spinel phases were observed indicating partial oxidation of Mn{sup 2+} to Mn{sup 3+}. • Oxidation of Mn{sup 2+} to Mn{sup 3+} results in decrease in lattice parameter of the spinel lattice. • Annealing at ≥ 600 °C, MnFe{sub 2}O{sub 4} decomposes into crystalline α-Mn{sub 2}O{sub 3} and α-Fe{sub 2}O{sub 3} along with amorphous-FeO phase. - Abstract: Manganese ferrite (MnFe{sub 2}O{sub 4}) nanoparticles were synthesized by sol-gel auto-combustion method using manganese nitrate and ferric nitrate as precursors and citric acid as a fuel. Scanning electron micrographs show irregularly shaped morphology of the particles. The as-prepared samples were annealed at 400, 500, 600 and 800 °C for 2 h in air. The phase identification and structural characterizations were performed using powder X-ray diffraction technique along with Mössbauer spectroscopy. Magnetization loops and {sup 57}Fe Mössbauer spectra were measured at RT. After annealing the sample at or below ∼ 500 °C, we observed two different spinel phases corresponding to two different lattice parameters. This is originating due to the partial oxidation of Mn{sup 2+} to Mn{sup 3+}. At high annealing temperatures (∼ 600 °C or above) the spinel MnFe{sub 2}O{sub 4} phase decomposes into crystalline α-Mn{sub 2}O{sub 3} and α-Fe{sub 2}O{sub 3} phases, and amorphous FeO phase.

  13. Effects of nitrogen gas ratio on the structural and corrosion properties of ZrN thin films grown on biodegradable magnesium alloy by ion-beam sputtering

    Science.gov (United States)

    Kiahosseini, Seyed Rahim; Mojtahedzadeh Larijani, Majid

    2017-12-01

    Studies on the corrosion resistance of magnesium alloys, which are widely applied as biomaterials, have increased in recent years. In this work, zirconium nitride (ZrN) coatings were deposited on AZ91 magnesium alloy through ion-beam sputtering at 473 K with 0.3, 0.4, 0.5, and 0.6 nitrogen proportions [F(N2)] in ionized gas. X-ray diffraction, profilometry, hardness tests, scanning electron microscopy, and potentiodynamic polarization techniques were used to analyze the structure, thickness, adhesion, microstructure, and corrosion resistance of coated samples, respectively. Results showed that the (111) crystalline orientation dominated in all coatings. Williamson-Hall technique revealed that the crystallite size of ZrN films decreased from 73 to 20 nm with increasing F(N2), and compressive microstrain increased from 0.004 to 0.030. Film thicknesses were inversely correlated with N2 amount and significantly decreased from 1.7 to 0.8 µm. The maximum d P/d r ratio, a dependent factor of adhesion, was 0.04 kg/cm for the film deposited under the F(N2) value of 0.5. The corrosion potential of coated samples was not significantly different from that of uncoated AZ91. Under the F(N2) value of 0.6, corrosion current density slightly decreased from 14 to 9.7 µA/cm2 and significantly increased to 13.5 µA/cm2. Results indicated that ZrN film deposited under the F(N2) value of 0.5 showed high adhesion and corrosion resistance.

  14. Structural, magnetic and optical properties of a dilute magnetic semiconductor based on Ce{sub 1−x}Co{sub x}O{sub 2} thin film grown on LaAlO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Mahmoud, Waleed E., E-mail: w_e_mahmoud@yahoo.com [King Abdulaziz University, Faculty of Science, Department of Physics, Jeddah (Saudi Arabia); Suez Canal University, Faculty of Science, Department of Physics, Ismailia (Egypt); Al-Ghamdi, A.A. [King Abdulaziz University, Faculty of Science, Department of Physics, Jeddah (Saudi Arabia); Al-Agel, F.A. [Hail University, College of Science, Department of Physics, Hail (Saudi Arabia); Al-Arfaj, E. [Umm Alqura University, Department of Physics, Makkah (Saudi Arabia); Qassim University, College of Science, Physics Department, Buraidah 5145 (Saudi Arabia); Shokr, F.S. [King Abdulaziz University, Faculty of Science & Arts, Department of Physics, Rabigh (Saudi Arabia); Al-Gahtany, S.A. [King Abdulaziz University, Faculty of Science for Girls, Department of Physics, Jeddah (Saudi Arabia); Alshahrie, Ahmed [King Abdulaziz University, Faculty of Science, Department of Physics, Jeddah (Saudi Arabia); Jalled, Ouissem [King Abdulaziz University, Faculty of Science, Department of Physics, Jeddah (Saudi Arabia); Laboratory of Applied Mineral Chemistry, Department of Chemistry, University Tunis ElManar, Faculty of Sciences, Campus 2092, Tunis (Tunisia); Bronstein, L.M. [King Abdulaziz University, Faculty of Science, Department of Physics, Jeddah (Saudi Arabia); Texas State University-San Marcos, Department of Chemistry and Biochemistry, 601 University Dr., San Marcos, TX 78666 (United States); Beall, Gary W. [King Abdulaziz University, Faculty of Science, Department of Physics, Jeddah (Saudi Arabia); Indiana University, Department of Chemistry, Bloomington, IN 47405 (United States)

    2015-12-15

    Highlights: • Co doped CeO{sub 2} was grown on LaAlO{sub 3} (0 0 1) via a modified sol–gel spin-coating technique. • The concentration of the Co ions was varied from 1 to 15 at.%. • The incorporation of 5 at.% of Mn ions was found to provide formation of exceptionally magnetic moment. • This amount demonstrated a giant magnetic moment of 1.09 μ{sub B}/Co. • This amount reduced the optical band gap and enhanced the optical performance. - Abstract: The enhancement of the room temperature ferromagnetism and optical properties of the dilute magnetic metal oxides is a crucial clue to construct spin-based optoelectronic devices. In this work, Ce{sub 1−x}Co{sub x}O{sub 2} (0.01 ≤ x ≤0.15) thin films were prepared via ethylene glycol modified sol–gel spin coating technique on the LaAlO{sub 3} (0 0 1) substrate to enhance their room temperature ferromagnetism and optical properties. The structures, magnetic and optical properties of the prepared films were characterized by X-ray diffraction, atomic force microscopy, scanning electron microscopy, energy dispersive X-ray spectroscopy, SQUID magnetometer, X-ray photoelectron spectroscopy and UV–vis spectrophotometer. The results demonstrated that a single phase cubic structure was formed, implying the substitution of Co ions into the Ce ions sites. The prepared films showed room temperature ferromagnetism with saturation magnetic moment of 1.09 μ{sub B}/Co was achieved for 5 at.% Co-doped CeO{sub 2}. This film exhibited high optical transparency of 85% and low optical band energy gap of 3.39 eV. The improved magnetic and optical properties are argued to the increase of the density of the oxygen vacancies into the cerium oxide crystal structure due to the incorporation of Co ions.

  15. Omni-directional reflectors for deep blue LED using symmetric autocloning method

    Science.gov (United States)

    Chen, Sheng-Hui; Chen, Chun-Ko; Huang, Yu-Chia; Lee, Cheng-Chung

    2013-03-01

    Omni-directional reflectors (ODRs) for deep blue LED were designed and fabricated using symmetric autocloning method. The symmetric stack multi-layers for the reflectors were designed by finite-difference time-domain simulation. The fabricating process of ODR is combined with the techniques of anodic aluminum oxide (AAO) process and autocloning method. The two-dimensional structure template of nano-channel array was grown using AAO with the period of 150 nm. Then the shaping layer was deposited on the AAO template by evaporation deposition. Besides, the ion etching was applied to modify the apex angle to the triangle shape at 100°. Finally, the sub/(0.5TiO2 SiO2 0.5TiO2)8 multi-layer stack was deposited on the shaping layer using autocloning method to achieve the ODR. The results show the reflective spectra of ODR at the incident angles of 0, 30, 45, and 60° had high values within the range 400-450 nm. Besides, the central wavelength shifting is not obvious which is very good for keeping the color of LED stable.

  16. High-density InAs/GaAs{sub 1−x}Sb{sub x} quantum-dot structures grown by molecular beam epitaxy for use in intermediate band solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Debnath, M. C., E-mail: mdebnath@cnsi.ucla.edu [Homer L. Dodge Department of Physics and Astronomy, University of Oklahoma, Norman, Oklahoma 73019 (United States); California NanoSystems Institute and Electrical Engineering Department, University of California-Los Angeles (UCLA), Los Angeles, California 90095 (United States); Mishima, T. D.; Santos, M. B.; Cheng, Y.; Whiteside, V. R.; Sellers, I. R. [Homer L. Dodge Department of Physics and Astronomy, University of Oklahoma, Norman, Oklahoma 73019 (United States); Hossain, K. [Amethyst Research, Inc., 123 Case Circle, Ardmore, Oklahoma 73401 (United States); Laghumavarapu, R. B.; Liang, B. L.; Huffaker, D. L. [California NanoSystems Institute and Electrical Engineering Department, University of California-Los Angeles (UCLA), Los Angeles, California 90095 (United States)

    2016-03-21

    InAs quantum-dot structures were grown using a GaAs{sub 1−x}Sb{sub x} matrix on a GaAs(001) substrate. The use of GaAs{sub 1−x}Sb{sub x} for the buffer and cap layers effectively suppressed coalescence between dots and significantly increased the dot density. The highest density (∼3.5 × 10{sup 11}/cm{sup 2}) was obtained for a nominal 3.0 monolayer deposition of InAs with an Sb composition of x = 13–14% in the GaAs{sub 1−x}Sb{sub x} matrix. When the Sb composition was increased to 18%, the resulting large photoluminescent red shift (∼90 meV) indicated the release of compressive strain inside the quantum dots. For x > 13%, we observed a significant decrease in photoluminescence intensity and an increase in the carrier lifetime (≥4.0 ns). This is attributed to the type-II band alignment between the quantum dots and matrix material.

  17. Structure characterization of MHEMT heterostructure elements with In{sub 0.4}Ga{sub 0.6}As quantum well grown by molecular beam epitaxy on GaAs substrate using reciprocal space mapping

    Energy Technology Data Exchange (ETDEWEB)

    Aleshin, A. N., E-mail: a.n.aleshin@mail.ru; Bugaev, A. S. [Russian Academy of Sciences, Institute of Ultra High Frequency Semiconductor Electronics (Russian Federation); Ermakova, M. A. [Federal Agency on Technical Regulating and Metrology, Center for Study of Surface and Vacuum Properties (Russian Federation); Ruban, O. A. [Russian Academy of Sciences, Institute of Ultra High Frequency Semiconductor Electronics (Russian Federation)

    2016-03-15

    The crystallographic parameters of elements of a metamorphic high-electron-mobility transistor (MHEMT) heterostructure with In{sub 0.4}Ga{sub 0.6}As quantum well are determined using reciprocal space mapping. The heterostructure has been grown by molecular-beam epitaxy (MBE) on the vicinal surface of a GaAs substrate with a deviation angle of 2° from the (001) plane. The structure consists of a metamorphic step-graded buffer (composed of six layers, including an inverse step), a high-temperature buffer of constant composition, and active high-electron-mobility transistor (HEMT) layers. The InAs content in the metamorphic buffer layers varies from 0.1 to 0.48. Reciprocal space mapping has been performed for the 004 and 224 reflections (the latter in glancing exit geometry). Based on map processing, the lateral and vertical lattice parameters of In{sub x}Ga{sub 1–x}As ternary solid solutions of variable composition have been determined. The degree of layer lattice relaxation and the compressive stress are found within the linear elasticity theory. The high-temperature buffer layer of constant composition (on which active MHEMT layers are directly formed) is shown to have the highest (close to 100%) degree of relaxation in comparison with all other heterostructure layers and a minimum compressive stress.

  18. Structure characterization of MHEMT heterostructure elements with In0.4Ga0.6As quantum well grown by molecular beam epitaxy on GaAs substrate using reciprocal space mapping

    Science.gov (United States)

    Aleshin, A. N.; Bugaev, A. S.; Ermakova, M. A.; Ruban, O. A.

    2016-03-01

    The crystallographic parameters of elements of a metamorphic high-electron-mobility transistor (MHEMT) heterostructure with In0.4Ga0.6As quantum well are determined using reciprocal space mapping. The heterostructure has been grown by molecular-beam epitaxy (MBE) on the vicinal surface of a GaAs substrate with a deviation angle of 2° from the (001) plane. The structure consists of a metamorphic step-graded buffer (composed of six layers, including an inverse step), a high-temperature buffer of constant composition, and active high-electron-mobility transistor (HEMT) layers. The InAs content in the metamorphic buffer layers varies from 0.1 to 0.48. Reciprocal space mapping has been performed for the 004 and 224 reflections (the latter in glancing exit geometry). Based on map processing, the lateral and vertical lattice parameters of In x Ga1- x As ternary solid solutions of variable composition have been determined. The degree of layer lattice relaxation and the compressive stress are found within the linear elasticity theory. The high-temperature buffer layer of constant composition (on which active MHEMT layers are directly formed) is shown to have the highest (close to 100%) degree of relaxation in comparison with all other heterostructure layers and a minimum compressive stress.

  19. Structure characterization of MHEMT heterostructure elements with In_0_._4Ga_0_._6As quantum well grown by molecular beam epitaxy on GaAs substrate using reciprocal space mapping

    International Nuclear Information System (INIS)

    Aleshin, A. N.; Bugaev, A. S.; Ermakova, M. A.; Ruban, O. A.

    2016-01-01

    The crystallographic parameters of elements of a metamorphic high-electron-mobility transistor (MHEMT) heterostructure with In_0_._4Ga_0_._6As quantum well are determined using reciprocal space mapping. The heterostructure has been grown by molecular-beam epitaxy (MBE) on the vicinal surface of a GaAs substrate with a deviation angle of 2° from the (001) plane. The structure consists of a metamorphic step-graded buffer (composed of six layers, including an inverse step), a high-temperature buffer of constant composition, and active high-electron-mobility transistor (HEMT) layers. The InAs content in the metamorphic buffer layers varies from 0.1 to 0.48. Reciprocal space mapping has been performed for the 004 and 224 reflections (the latter in glancing exit geometry). Based on map processing, the lateral and vertical lattice parameters of In_xGa_1_–_xAs ternary solid solutions of variable composition have been determined. The degree of layer lattice relaxation and the compressive stress are found within the linear elasticity theory. The high-temperature buffer layer of constant composition (on which active MHEMT layers are directly formed) is shown to have the highest (close to 100%) degree of relaxation in comparison with all other heterostructure layers and a minimum compressive stress.

  20. Comparative study of structural and electro-optical properties of ZnO:Ga films grown by steered cathodic arc plasma evaporation and sputtering on plastic and their application on polymer-based organic solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Liang, Chih-Hao, E-mail: dataman888@hotmail.com [R& D Division, Walsin Technology Corporation, Kaohsiung, Taiwan (China); Hsiao, Yu-Jen [National Nano Device Laboratories, National Applied Research Laboratories, Tainan, Taiwan (China); Hwang, Weng-Sing [Department of Materials Science and Engineering, National Cheng Kung University, Tainan, Taiwan (China)

    2016-08-01

    Ga-doped ZnO (GZO) films with various thicknesses (105–490 nm) were deposited on PET substrates at a low temperature of 90 °C by a steered cathodic arc plasma evaporation (steered CAPE), and a GZO film with a thickness of 400 nm was deposited at 90 °C by a magnetron sputtering (MS) for comparison. The comparative analysis of the microstructure, residual stress, surface morphology, electrical and optical properties, chemical states, and doping efficiency of the films produced by the steered CAPE and MS processes was performed, and the effect of thickness on the CAPE-grown GZO films was investigated in detail. The results showed that the GZO films grown by steered CAPE exhibited higher crystallinity and lower internal stress than those deposited by MS. The transmittance and electrical properties were also enhanced for the steered CAPE-grown films. The figure of merit (Φ = T{sup 10}/R{sub s}, where T is the transmittance and R{sub s} is the sheet resistance in Ω/□). was used to evaluate the performance of the electro-optical properties. The GZO films with a thickness of 400 nm deposited by CAPE had the highest Φ value, 1.94 × 10{sup −2} Ω{sup −1}, a corresponding average visible transmittance of 88.8% and resistivity of 6.29 × 10{sup −4} Ω·cm. In contrast, the Φ value of MS-deposited GZO film with a thickness of 400 nm is only 1.1 × 10{sup −3} Ω{sup −1}. This can be attributed to the increase in crystalline size, [0001] preferred orientation, decrease in stacking faults density and Ar contamination in steered CAPE-grown films, leading to increases in the Hall mobility and carrier density. In addition, the power conversion efficiency (PCE) of organic solar cells was significantly improved by using the CAPE-grown GZO electrode, and the PCE values were 1.2% and 1.7% for the devices with MS-grown and CAPE-grown GZO electrodes, respectively. - Highlights: • ZnO:Ga (GZO) films were grown on PET by steered cathodic arc plasma evaporation (CAPE

  1. Effect of nitrogen flow rate on structural, morphological and optical properties of In-rich In{sub x}Al{sub 1−x}N thin films grown by plasma-assisted dual source reactive evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Alizadeh, M., E-mail: alizadeh_kozerash@yahoo.com [Low Dimensional Materials Research Centre (LDMRC), Department of Physics, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia); Ganesh, V.; Goh, B.T. [Low Dimensional Materials Research Centre (LDMRC), Department of Physics, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia); Dee, C.F.; Mohmad, A.R. [Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, Bangi, Selangor (Malaysia); Rahman, S.A., E-mail: saadah@um.edu.my [Low Dimensional Materials Research Centre (LDMRC), Department of Physics, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia)

    2016-08-15

    Highlights: • In-rich In{sub x}Al{sub 1−x}N films were grown by Plasma-aided reactive evaporation. • Effect of nitrogen flow rate on the films properties was investigated. • The band gap of the films was varied from 1.17 to 0.90 eV. • By increasing N{sub 2} flow rate the In{sub x}Al{sub 1−x}N films tend to turn into amorphous state. • At higher N{sub 2} flow rate agglomeration of the particles is highly enhanced. - Abstract: In-rich In{sub x}Al{sub 1−x}N thin films were deposited on quartz substrate at various nitrogen flow rates by plasma-assisted dual source reactive evaporation technique. The elemental composition, surface morphology, structural and optical properties of the films were investigated by X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FESEM), Raman spectroscopy, X-ray diffraction (XRD), UV–vis spectrophotometer and photoluminescence (PL) measurements. XPS results revealed that the indium composition (x) of the In{sub x}Al{sub 1−x}N films increases from 0.90 to 0.97 as the nitrogen flow rate is increased from 40 to 100 sccm, respectively. FESEM images of the surface and cross-sectional microstructure of the In{sub x}Al{sub 1−x}N films showed that by increasing the N{sub 2} flow rate, the grown particles are highly agglomerated. Raman and XRD results indicated that by increasing nitrogen flow rate the In-rich In{sub x}Al{sub 1−x}N films tend to turn into amorphous state. It was found that band gap energy of the films are in the range of 0.90–1.17 eV which is desirable for the application of full spectra solar cells.

  2. LEDs light up the world

    Energy Technology Data Exchange (ETDEWEB)

    Mather, N.

    2004-06-30

    A lighting system using light-emitting diodes, and privately financed by a Canadian engineering professor at the University of Calgary, has been set up in a village in Nepal in 2000. Since then, through the efforts of the 'Light Up The World' Foundation, established by Dr. Irvine-Halliday, projects have lit up thousands of homes in the Philippines, India, Afghanistan, the Galapagos Islands, Mexico, Sri Lanka, and Angola. Although the goal of the project is primarily to provide lighting for reading and writing for school-children, the project has been the source of many other advantages; creation of enterprise, increased employment, enhanced income, gender equality, and improvements in health and safety among them. Since LED lamps in most cases replace kerosene lamps, the system also has significant environmental benefits. The system as originally envisioned creates electricity by pedal-powered generator, or by solar panels connected to a battery, depending on what is available at each home. Each home is connected to the power supply and supplied with low-energy diode lamps. The lights are extremely efficient and many homes can be equipped with them using less energy than it takes to power a single 100-watt light bulb. 5 photos.

  3. Diamond structures grown from polymer composite nanofibers

    Czech Academy of Sciences Publication Activity Database

    Potocký, Štěpán; Kromka, Alexander; Babchenko, Oleg; Rezek, Bohuslav; Martinová, L.; Pokorný, P.

    2013-01-01

    Roč. 5, č. 6 (2013), s. 519-521 ISSN 2164-6627 R&D Projects: GA ČR GAP108/12/0910; GA ČR GAP205/12/0908 Institutional support: RVO:68378271 Keywords : chemical vapour deposition * composite polymer * nanocrystalline diamond * nanofiber sheet * SEM Subject RIV: BM - Solid Matter Physics ; Magnetism

  4. GREENHOUSE-GROWN CAPE GOOSEBERRY

    African Journals Online (AJOL)

    /2006 S 4,00. Printed in Uganda. All rights reserved O2006, African Crop Science Society. SHORT COMMINICATION. EFFECT OF GIBBERRELLIC ACID ON GROWTH AND FRUIT YIELD OF. GREENHOUSE-GROWN CAPE GOOSEBERRY.

  5. High-power AlGaN-based near-ultraviolet light-emitting diodes grown on Si(111)

    Science.gov (United States)

    Li, Zengcheng; Liu, Legong; Huang, Yingnan; Sun, Qian; Feng, Meixin; Zhou, Yu; Zhao, Hanmin; Yang, Hui

    2017-07-01

    High-power AlGaN-based 385 nm near-ultraviolet light-emitting diodes (UVA-LEDs) grown on Si(111) substrates are reported. The threading dislocation (TD) density of AlGaN was reduced by employing an Al-composition step-graded AlN/AlGaN multilayer buffer. V-shaped pits were intentionally incorporated into the active region to screen the carriers from the nonradiative recombination centers (NRCs) around the TDs and to facilitate hole injection. The light extraction efficiency was enhanced by the surface roughening of a thin-film (TF) vertical chip structure. The as-fabricated TF-UVA-LED exhibited a light output power of 960 mW at 500 mA, corresponding to an external quantum efficiency of 59.7%.

  6. A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers

    International Nuclear Information System (INIS)

    Davies, M. J.; Hammersley, S.; Dawson, P.; Massabuau, F. C.-P.; Oliver, R. A.; Kappers, M. J.; Humphreys, C. J.

    2016-01-01

    In this paper, we report on a detailed spectroscopic study of the optical properties of InGaN/GaN multiple quantum well structures, both with and without a Si-doped InGaN prelayer. In photoluminescence and photoluminescence excitation spectroscopy, a 2nd emission band, occurring at a higher energy, was identified in the spectrum of the multiple quantum well structure containing the InGaN prelayer, originating from the first quantum well in the stack. Band structure calculations revealed that a reduction in the resultant electric field occurred in the quantum well immediately adjacent to the InGaN prelayer, therefore leading to a reduction in the strength of the quantum confined Stark effect in this quantum well. The partial suppression of the quantum confined Stark effect in this quantum well led to a modified (higher) emission energy and increased radiative recombination rate. Therefore, we ascribed the origin of the high energy emission band to recombination from the 1st quantum well in the structure. Study of the temperature dependent recombination dynamics of both samples showed that the decay time measured across the spectrum was strongly influenced by the 1st quantum well in the stack (in the sample containing the prelayer) leading to a shorter average room temperature lifetime in this sample. The room temperature internal quantum efficiency of the prelayer containing sample was found to be higher than the reference sample (36% compared to 25%) which was thus attributed to the faster radiative recombination rate of the 1st quantum well providing a recombination pathway that is more competitive with non-radiative recombination processes

  7. A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers

    Energy Technology Data Exchange (ETDEWEB)

    Davies, M. J., E-mail: Matthew.Davies-2@Manchester.ac.uk; Hammersley, S.; Dawson, P. [School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester M13 9PL (United Kingdom); Massabuau, F. C.-P.; Oliver, R. A.; Kappers, M. J.; Humphreys, C. J. [Department of Material Science and Metallurgy, 27 Charles Babbage Road, University of Cambridge, Cambridge CB3 0FS (United Kingdom)

    2016-02-07

    In this paper, we report on a detailed spectroscopic study of the optical properties of InGaN/GaN multiple quantum well structures, both with and without a Si-doped InGaN prelayer. In photoluminescence and photoluminescence excitation spectroscopy, a 2nd emission band, occurring at a higher energy, was identified in the spectrum of the multiple quantum well structure containing the InGaN prelayer, originating from the first quantum well in the stack. Band structure calculations revealed that a reduction in the resultant electric field occurred in the quantum well immediately adjacent to the InGaN prelayer, therefore leading to a reduction in the strength of the quantum confined Stark effect in this quantum well. The partial suppression of the quantum confined Stark effect in this quantum well led to a modified (higher) emission energy and increased radiative recombination rate. Therefore, we ascribed the origin of the high energy emission band to recombination from the 1st quantum well in the structure. Study of the temperature dependent recombination dynamics of both samples showed that the decay time measured across the spectrum was strongly influenced by the 1st quantum well in the stack (in the sample containing the prelayer) leading to a shorter average room temperature lifetime in this sample. The room temperature internal quantum efficiency of the prelayer containing sample was found to be higher than the reference sample (36% compared to 25%) which was thus attributed to the faster radiative recombination rate of the 1st quantum well providing a recombination pathway that is more competitive with non-radiative recombination processes.

  8. Spectral quality affects disease development of three pathogens on hydroponically grown plants

    Science.gov (United States)

    Schuerger, A. C.; Brown, C. S.; Sager, J. C. (Principal Investigator)

    1997-01-01

    Plants were grown under light-emitting diode (LED) arrays with various spectra to determine the effects of light quality on the development of diseases caused by tomato mosaic virus (ToMV) on pepper (Capsicum annuum L.), powdery mildew [Sphaerotheca fuliginea (Schlectend:Fr.) Pollaci] on cucumber (Cucumis sativus L.), and bacterial wilt (Pseudomonas solanacearum Smith) on tomato (Lycopersicon esculentum Mill.). One LED (660) array supplied 99% red light at 660 nm (25 nm bandwidth at half-peak height) and 1% far-red light between 700 to 800 nm. A second LED (660/735) array supplied 83% red light at 660 nm and 17% far-red light at 735 nm (25 nm bandwidth at half-peak height). A third LED (660/BF) array supplied 98% red light at 660 nm, 1% blue light (BF) between 350 to 550 nm, and 1% far-red light between 700 to 800 nm. Control plants were grown under broad-spectrum metal halide (MH) lamps. Plants were grown at a mean photon flux (300 to 800 nm) of 330 micromoles m-2 s-1 under a 12-h day/night photoperiod. Spectral quality affected each pathosystem differently. In the ToMV/pepper pathosystem, disease symptoms developed slower and were less severe in plants grown under light sources that contained blue and UV-A wavelengths (MH and 660/BF treatments) compared to plants grown under light sources that lacked blue and UV-A wavelengths (660 and 660/735 LED arrays). In contrast, the number of colonies per leaf was highest and the mean colony diameters of S. fuliginea on cucumber plants were largest on leaves grown under the MH lamp (highest amount of blue and UV-A light) and least on leaves grown under the 660 LED array (no blue or UV-A light). The addition of far-red irradiation to the primary light source in the 660/735 LED array increased the colony counts per leaf in the S. fuliginea/cucumber pathosystem compared to the red-only (660) LED array. In the P. solanacearum/tomato pathosystem, disease symptoms were less severe in plants grown under the 660 LED array, but the

  9. Fokusgruppeinterview som led i en evalueringsproces

    DEFF Research Database (Denmark)

    Andersen-Mølgaard, Hanna; Harrit, Ole

    2006-01-01

    Teoretiske begrundelser og perspektiver, responsiv-konstruktivistisk evaluering, fokusgruppeinterview som led i BIKVAmodellen, eksempler, vurdering og perspektivering......Teoretiske begrundelser og perspektiver, responsiv-konstruktivistisk evaluering, fokusgruppeinterview som led i BIKVAmodellen, eksempler, vurdering og perspektivering...

  10. Goniometric characterization of LED based greenhouse lighting

    DEFF Research Database (Denmark)

    Thorseth, Anders; Lindén, Johannes; Corell, Dennis Dan

    2015-01-01

    This paper describes a demonstration of goniospectroradiometry for characterizations of new light emitting diode (LED) based luminaries for enhanced photosynthesis in greenhouses. It highlights the differences between measurement of the traditional high pressure sodium (HPS) luminaries and the LED...

  11. ZnMgO-ZnO quantum wells embedded in ZnO nanopillars: Towards realisation of nano-LEDs

    Energy Technology Data Exchange (ETDEWEB)

    Bakin, A.; El-Shaer, A.; Mofor, A.C.; Al-Suleiman, M.; Schlenker, E.; Waag, A. [Institute of Semiconductor Technology, Braunschweig Technical University, Hans-Sommer-Str. 66, 38106 Braunschweig (Germany)

    2007-07-01

    ZnO thin films, ZnMgO/ZnO heterostructures and ZnO nanostructures were fabricated using molecular beam epitaxy (MBE), vapour phase transport (VPT) and an aqueous chemical growth approach (ACG). The possibility to employ several fabrication techniques is of special importance for the realization of unique device structures. MBE was implemented for ZnO-based layer and heterostructure growth. Pronounced RHEED oscillations were used for growth control and optimisation, resulting in high quality ZnO and Zn{sub 1-x}Mg{sub x}O epilayers and heterostructures, as well as ZnMgO/ZnO quantum wells on sapphire and SiC substrates. A novel advanced VPT approach is developed and sapphire, SiC, ZnO epitaxial layers, and even plastic and glass were implemented as substrates for ZnO growth. The VPT fabrication of ZnO nanopillars, leading to well aligned, c-axis oriented nanopillars with excellent quality and purity is demonstrated. Successful steps were made towards device fabrication on ZnO basis. The nanopillar fabrication technique is combined with MBE technology: MBE-grown ZnMgO/ZnO quantum well structures were grown on ZnO nanopillars presenting significant progress towards nano-LEDs realization. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Molecular Beam Epitaxy-Grown InGaN Nanomushrooms and Nanowires for White Light Source Applications

    KAUST Repository

    Gasim, Anwar A.; Bhattacharya, Pallab K.; Cha, Dong Kyu; Ng, Tien Khee; Ooi, Boon S.

    2012-01-01

    We report the observation of coexisting InGaN nanomushrooms and nanowires grown via MBE. Photoluminescence characterization shows that the nanostructures emit yellow and blue light, respectively. The combined emission is promising for white-LEDs.